A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

NASA Astrophysics Data System (ADS)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.; Rebecca, L.; Lalnunthari, J.; Thanga, H. H.

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power aremore » studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.« less

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements.

PubMed

Hlondo, L R; Lalremruata, B; Punte, L R M; Rebecca, L; Lalnunthari, J; Thanga, H H

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

Spatial proximity effects on the excitation of sheath RF voltages by evanescent slow waves in the ion cyclotron range of frequencies

NASA Astrophysics Data System (ADS)

Colas, Laurent; Lu, Ling-Feng; Křivská, Alena; Jacquot, Jonathan; Hillairet, Julien; Helou, Walid; Goniche, Marc; Heuraux, Stéphane; Faudot, Eric

2017-02-01

We investigate theoretically how sheath radio-frequency (RF) oscillations relate to the spatial structure of the near RF parallel electric field E ∥ emitted by ion cyclotron (IC) wave launchers. We use a simple model of slow wave (SW) evanescence coupled with direct current (DC) plasma biasing via sheath boundary conditions in a 3D parallelepiped filled with homogeneous cold magnetized plasma. Within a ‘wide-sheath’ asymptotic regime, valid for large-amplitude near RF fields, the RF part of this simple RF  +  DC model becomes linear: the sheath oscillating voltage V RF at open field line boundaries can be re-expressed as a linear combination of individual contributions by every emitting point in the input field map. SW evanescence makes individual contributions all the larger as the wave emission point is located closer to the sheath walls. The decay of |V RF| with the emission point/sheath poloidal distance involves the transverse SW evanescence length and the radial protrusion depth of lateral boundaries. The decay of |V RF| with the emitter/sheath parallel distance is quantified as a function of the parallel SW evanescence length and the parallel connection length of open magnetic field lines. For realistic geometries and target SOL plasmas, poloidal decay occurs over a few centimeters. Typical parallel decay lengths for |V RF| are found to be smaller than IC antenna parallel extension. Oscillating sheath voltages at IC antenna side limiters are therefore mainly sensitive to E ∥ emission by active or passive conducting elements near these limiters, as suggested by recent experimental observations. Parallel proximity effects could also explain why sheath oscillations persist with antisymmetric strap toroidal phasing, despite the parallel antisymmetry of the radiated field map. They could finally justify current attempts at reducing the RF fields induced near antenna boxes to attenuate sheath oscillations in their vicinity.

Ion funnel device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Chen, Tsung-Chi; Harrer, Marques B.

2017-11-21

An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second direction. The device includes an RF voltage source and a DC voltage source. A RF voltage with a superimposed DC voltage gradient is applied to the first pair of electrodes, and a DC voltage gradient is applied to the second pair of electrodes.

A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator

NASA Astrophysics Data System (ADS)

Park, Jae-Hyoung; Lee, Hee-Chul; Park, Yong-Hee; Kim, Yong-Dae; Ji, Chang-Hyeon; Bu, Jonguk; Nam, Hyo-Jin

2006-11-01

In this paper, a fully wafer-level packaged RF MEMS switch has been demonstrated, which has low operation voltage, using a piezoelectric actuator. The piezoelectric actuator was designed to operate at low actuation voltage for application to advanced mobile handsets. The dc contact type RF switch was packaged using the wafer-level bonding process. The CPW transmission lines and piezoelectric actuators have been fabricated on separate wafers and assembled together by the wafer-level eutectic bonding process. A gold and tin composite was used for eutectic bonding at a low temperature of 300 °C. Via holes interconnecting the electrical contact pads through the wafer were filled completely with electroplated copper. The fully wafer-level packaged RF MEMS switch showed an insertion loss of 0.63 dB and an isolation of 26.4 dB at 5 GHz. The actuation voltage of the switch was 5 V. The resonant frequency of the piezoelectric actuator was 38.4 kHz and the spring constant of the actuator was calculated to be 9.6 N m-1. The size of the packaged SPST (single-pole single-through) switch was 1.2 mm × 1.2 mm including the packaging sealing rim. The effect of the proposed package structure on the RF performance was characterized with a device having CPW through lines and vertical feed lines excluding the RF switches. The measured packaging loss was 0.2 dB and the return loss was 33.6 dB at 5 GHz.

Static current-voltage characteristics for radio-frequency induction discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budyansky, A.; Zykov, A.

1995-12-31

The aim of this work was to obtain experimentally such characteristic of Radio-Frequency Induction Discharge (RFID) that can play the role of its current-voltage characteristic (CVC) and to explain the nature of current and voltage jumps arising in RF coils at exciting of discharge. Experiments were made in quartz 5.5, 11, 20 cm diam tubes with outer RF coil at pressures 10--100 mTorr, at frequency 13.56 MHz and discharge power to 500 W. In case of outer coil as analogue of discharge voltage it`s convenient to use the value of the RF voltage U{sub R}, induced around outer perimeter ofmore » discharge tube. It is evident that current and voltage jumps arising at exciting of discharge are due to low output resistance of standard generators and negative slope of initial part of CVC. Three sets of such dependencies for different pressures were obtained for each diameter of tubes. The influence of different metal electrodes placed into discharge volume on CVC`s shape has been studied also. Experimental results can explain the behavior of HFI discharge as a load of RF generator and give data for calculation of RF circuit.« less

DAWN Mission Bus and Waveguide Venting Analysis Review

NASA Technical Reports Server (NTRS)

Cragg, Clinton H.; Kichak, Robert A.; Sutter, James K.; Holder, Donald; Jeng, Frank; Ruitberg, Arthur; Sank, Victor

2007-01-01

A concern was raised regarding the time after launch when the DAWN Mission Communications Subsystem, which contains a 100 Watt X-Band Traveling Wave Tube Amplifier (TWTA) with a high voltage ((approximately 7 Kilo Volt (KV)) Electronic Power Converter (EPC), will be powered on for the first post-launch downlink. This activation is planned to be approximately one hour after launch. Orbital Sciences (the DAWN Mission spacecraft contractor) typically requires a 24-hour wait period prior to high voltage initiation for Earth-orbiting Science and GEO spacecraft. The concern relates to the issue of corona and/or radio frequency (RF) breakdown of the TWTA ((high voltage direct current (DC) and RF)), and of the microwave components (high voltage RF) in the presence of partial atmospheric pressures or outgassing constituents. In particular, generally the diplexer and circulator are susceptible to RF breakdown in the corona region due to the presence of small physical gaps (( 2.5 millimeter (mm)) between conductors that carry an RF voltage. The NESC concurred the DAWN Mission communication system is safe for activation.

Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

NASA Astrophysics Data System (ADS)

Yeung, Sai Ho; Pradhan, Raunaq; Feng, Xiaohua; Zheng, Yuanjin

2015-09-01

Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF) stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC) stimulation, magnetic stimulation (MS) and transcutaneous electrical nerve stimulation (TENS) are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissue voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.

Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeung, Sai Ho; Pradhan, Raunaq; Feng, Xiaohua

Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF) stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC) stimulation, magnetic stimulation (MS) and transcutaneous electrical nerve stimulation (TENS) are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissuemore » voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.« less

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

Simulation of RF power and multi-cusp magnetic field requirement for H- ion sources

NASA Astrophysics Data System (ADS)

Pathak, Manish; Senecha, V. K.; Kumar, Rajnish; Ghodke, Dharmraj. V.

2016-12-01

A computer simulation study for multi-cusp RF based H- ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H- Linac project for SNS applications. The average reaction rates for different reactions responsible for H- ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H- ion source for a maximum possible H- ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H- ion source like excited hydrogen molecular density, H- ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H- ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H- ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

History and Technology Developments of Radio Frequency (RF) Systems for Particle Accelerators

NASA Astrophysics Data System (ADS)

Nassiri, A.; Chase, B.; Craievich, P.; Fabris, A.; Frischholz, H.; Jacob, J.; Jensen, E.; Jensen, M.; Kustom, R.; Pasquinelli, R.

2016-04-01

This article attempts to give a historical account and review of technological developments and innovations in radio frequency (RF) systems for particle accelerators. The evolution from electrostatic field to the use of RF voltage suggested by R. Wideröe made it possible to overcome the shortcomings of electrostatic accelerators, which limited the maximum achievable electric field due to voltage breakdown. After an introduction, we will provide reviews of technological developments of RF systems for particle accelerators.

Radio frequency cavity analysis, measurement, and calibration of absolute Dee voltage for K-500 superconducting cyclotron at VECC, Kolkata

DOE Office of Scientific and Technical Information (OSTI.GOV)

Som, Sumit; Seth, Sudeshna; Mandal, Aditya

2013-02-15

Variable Energy Cyclotron Centre has commissioned a K-500 superconducting cyclotron for various types of nuclear physics experiments. The 3-phase radio-frequency system of superconducting cyclotron has been developed in the frequency range 9-27 MHz with amplitude and phase stability of 100 ppm and {+-}0.2{sup 0}, respectively. The analysis of the RF cavity has been carried out using 3D Computer Simulation Technology (CST) Microwave Studio code and various RF parameters and accelerating voltages ('Dee' voltage) are calculated from simulation. During the RF system commissioning, measurement of different RF parameters has been done and absolute Dee voltage has been calibrated using a CdTemore » X-ray detector along with its accessories and known X-ray source. The present paper discusses about the measured data and the simulation result.« less

New ion trap for atomic frequency standard applications

NASA Technical Reports Server (NTRS)

Prestage, J. D.; Dick, G. J.; Maleki, L.

1989-01-01

A novel linear ion trap that permits storage of a large number of ions with reduced susceptibility to the second-order Doppler effect caused by the radio frequency (RF) confining fields has been designed and built. This new trap should store about 20 times the number of ions a conventional RF trap stores with no corresponding increase in second-order Doppler shift from the confining field. In addition, the sensitivity of this shift to trapping parameters, i.e., RF voltage, RF frequency, and trap size, is greatly reduced.

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

Broadband Electric-Field Sensor Array Technology

DTIC Science & Technology

2012-08-05

output voltage modulation on the output RF transmission line (impedance Z0 = 50 Ω) via a transimpedance amplifier connected to the photodiode. The...voltage amplitude is where G is the conversion gain of the photodiode and amplifier . The RF power detected by an RF receiver with a matched impedance...wave (CW) tunable near-infrared laser amplified by an erbium-doped fiber amplifier (EDFA) is guided by single-mode optical fiber and coupled into

The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

NASA Astrophysics Data System (ADS)

Wiebold, Matthew D.

Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn < 1 mTorr) expanding argon plasmas in the Madison Helicon Experiment. The potential gradient leads to ion acceleration exceeding Ei ≈ 7 kTe in some cases. Up to 1 kW of 13.56 MHz RF power is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field up to 1 kG. An RPA measures the IEDF and an emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in electron density as RF power is increased. In the capacitive mode, large fluctuations of the plasma potential (Vp--p ≳ 140 V, Vp--p/Vp ≈ 150%) exist at the RF frequency, leading to formation of a self-bias voltage. The mobile electrons can flow from the upstream region during an RF cycle whereas ions cannot, leading to an initial imbalance of flux, and the self-bias voltage builds as a result. The plasma potential in the expansion chamber is held near the floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

Studies and optimization of Pohang Light Source-II superconducting radio frequency system at stable top-up operation with beam current of 400 mA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joo, Youngdo, E-mail: Ydjoo77@postech.ac.kr; Yu, Inha; Park, Insoo

After three years of upgrading work, the Pohang Light Source-II (PLS-II) is now successfully operating. The final quantitative goal of PLS-II is a top-up user-service operation with beam current of 400 mA to be completed by the end of 2014. During the beam store test up to 400 mA in the storage ring (SR), it was observed that the vacuum pressure around the radio frequency (RF) window of the superconducting cavity rapidly increases over the interlock level limiting the availability of the maximum beam current storing. Although available beam current is enhanced by setting a higher RF accelerating voltage, it is bettermore » to keep the RF accelerating voltage as low as possible in the long time top-up operation. We investigated the cause of the window vacuum pressure increment by studying the changes in the electric field distribution at the superconducting cavity and waveguide according to the beam current. In our simulation, an equivalent physical modeling was developed using a finite-difference time-domain code. The simulation revealed that the electric field amplitude at the RF window is exponentially increased as the beam current increases, thus this high electric field amplitude causes a RF breakdown at the RF window, which comes with the rapid increase of window vacuum pressure. The RF accelerating voltage of PLS-II RF system was set to 4.95 MV, which was estimated using the maximum available beam current that works as a function of RF voltage, and the top-up operation test with the beam current of 400 mA was successfully carried out.« less

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

NASA Astrophysics Data System (ADS)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

RF-DC converter for HF RFID sensing applications powered by a near-field loop antenna

NASA Astrophysics Data System (ADS)

Colella, R.; Pasca, M.; Catarinucci, L.; Tarricone, L.; D'Amico, S.

2016-07-01

In this paper, an RF-DC converter operating at 13.56 MHz (HF radio frequency identification (RFID) frequency band) is presented. Its architecture provides RF to load isolation, reducing the losses due to the reverse saturation current and improving the sensitivity. Fed by a loop antenna, the RF-DC converter is made by a Dickson's RF-DC rectifier and an additional Pelliconi's charge pump driven by a fully integrated 50 kHz ring oscillator realized using an application-specific integrated circuit (ASIC). The input RF signal from the reader is converted to DC supply voltage and stored on a 1 μF capacitor. Mathematical model of the converter is developed and verified through measurements. Silicon prototypes of the ASIC have been realized in 350 nm complementary metal-oxide semiconductor technology. Measurements have been done on 10 different samples showing an output voltage in the range of 0.5 V-3.11 V in correspondence of an RF input signal power in the range of -19 dBm-0 dBm. These output voltage levels are suitable to power HF RFID sensing platforms and sensor nodes of body sensor networks.

DLC Film Formation Technologies by Applying Pulse Voltage Coupled with RF Voltage to Complicated 3-dimensional Substrates and Industrial Application

NASA Astrophysics Data System (ADS)

Suzuki, Yasuo

A uniform plasma-based ion implantation and DLC film formation technologies on the surface of complicated 3-dimensional substrates have been developed by applying pulse voltage coupled with RF voltage to the substrates such as plastics, rubber as well as metals with the similar deposition rate. These technologies are widely applicable to both ion implantation and DLC film formation onto the automobile parts, mechanical parts and metal molds. A problem to be solved is reducing cost. The deposition rate of DLC films is expected to increase to around 10μm/hr, which is ten times larger than that of the conventional method, by hybridizing the ICP (Induction Coupling Plasma) with a plus-minus voltage source. This epoch-making technology will be able to substitute for the electro-plating method in the near future. In this paper, the DLC film formation technology by applying both RF and pulse voltage, its applications and its prospect are presented.

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

PubMed

Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K Y; Chu, Paul K

2008-04-01

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, C. M.; Bhat, S.

Increasing proton beam power on neutrino production targets is one of the major goals of the Fermilab long term accelerator programs. In this effort, the Fermilab 8 GeV Booster synchrotron plays a critical role for at least the next two decades. Therefore, understanding the Booster in great detail is important as we continue to improve its performance. For example, it is important to know accurately the available RF power in the Booster by carrying out beam-based measurements in order to specify the needed upgrades to the Booster RF system. Since the Booster magnetic field is changing continuously measuring/calibrating the RFmore » voltage is not a trivial task. Here, we present a beam based method for the RF voltage measurements. Data analysis is carried out using computer programs developed in Python and MATLAB. The method presented here is applicable to any RCS which do not have flat-bottom and flat-top in the acceleration magnetic ramps. We have also carried out longitudinal beam tomography at injection and extraction energies with the data used for RF voltage measurements. Beam based RF voltage measurements and beam tomography were never done before for the Fermilab Booster. The results from these investigations will be very useful in future intensity upgrades.« less

Unified Model of the rf Plasma Sheath, Part II

NASA Astrophysics Data System (ADS)

Riley, Merle

1996-10-01

By developing an approximation to the first integral of the Poisson equation, one can obtain solutions for the current-voltage characteristics of an rf plasma sheath that are valid over the whole range of inertial response of the ions to an imposed rf voltage or current. (M.E.Riley, 1995 GEC, abstract QA5, published in Bull. Am. Phys. Soc., 40, 1587 (1995).) The theory has been shown to adequately reproduce current-voltage characteristics of two extreme cases (M.A. Lieberman, IEEE Trans. Plasma Sci. 16, 638 (1988). A. Metze, D.W. Ernie, and H.J.Oskam, J.Appl.Phys., 60, 3081 (1986).) of ion response. In this work I show the effect of different conventions for connecting the sheath model to the bulk plasma. Modifications of the Mach number and a finite electric field at the Bohm point are natural choices. The differences are examined for a sheath in a high density Ar plasma and are found to be insignificant. A theoretical argument favors the electric field modification. *Work performed at Sandia National Labs and supported by US DoE under contract DE-AC04-94AL85000.

Capacitively coupled RF voltage probe having optimized flux linkage

DOEpatents

Moore, James A.; Sparks, Dennis O.

1999-02-02

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

RF current sensor

DOEpatents

Moore, James A.; Sparks, Dennis O.

1998-11-10

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Investigations on KONUS beam dynamics using the pre-stripper drift tube linac at GSI

NASA Astrophysics Data System (ADS)

Xiao, C.; Du, X. N.; Groening, L.

2018-04-01

Interdigital H-mode (IH) drift tube linacs (DTLs) based on KONUS beam dynamics are very sensitive to the rf-phases and voltages at the gaps between tubes. In order to design these DTLs, a deep understanding of the underlying longitudinal beam dynamics is mandatory. The report presents tracking simulations along an IH-DTL using the PARTRAN and BEAMPATH codes together with MATHCAD and CST. Simulation results illustrate that the beam dynamics design of the pre-stripper IH-DTL at GSI is sensitive to slight deviations of rf-phase and gap voltages with impact to the mean beam energy at the DTL exit. Applying the existing geometrical design, rf-voltages, and rf-phases of the DTL were re-adjusted. In simulations this re-optimized design can provide for more than 90% of transmission of an intense 15 emA beam keeping the reduction of beam brilliance below 25%.

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2014 CFR

2014-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2012 CFR

2012-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2013 CFR

2013-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

Symmetric operation of the resonant exchange qubit

NASA Astrophysics Data System (ADS)

Malinowski, Filip K.; Martins, Frederico; Nissen, Peter D.; Fallahi, Saeed; Gardner, Geoffrey C.; Manfra, Michael J.; Marcus, Charles M.; Kuemmeth, Ferdinand

2017-07-01

We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated rf pulses. We find that the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between rf drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to 32 π pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of symmetric configurations in the operation of triple-dot qubits.

Primary experimental study on safety of deep brain stimulation in RF electromagnetic field.

PubMed

Jun, Xu; Luming, Li; Hongwei, Hao

2009-01-01

With the rapid growth of clinical application of Deep Brain Stimulation, its safety and functional concern in the electromagnetic field, another pollution becoming much more serious, has become more and more significant. Meanwhile, the measuring standards on Electromagnetic Compatibility (EMC) for DBS are still incomplete. Particularly, the knowledge of the electromagnetic field induced signals on the implanted lead is ignorant while some informal reports some side effects. This paper briefly surmised the status of EMC standards on implantable medical devices. Based on the EMC experiments of DBS device we developed, two experiments for measuring the induced voltage of the deep brain stimulator in RF electromagnetic field were reported. The measured data showed that the induced voltage in some frequency was prominent, for example over 2V. As a primary research, we think these results would be significant to cause researcher to pay more attention to the EMC safety problem and biological effects of the induced voltage in deep brain stimulation and other implantable devices.

Characteristic properties of the frame-antenna-produced RF discharge evolution in the Uragan-3M torsatron

NASA Astrophysics Data System (ADS)

Chechkin, V. V.; Grigor'eva, L. I.; Pavlichenko, R. O.; Kulaga, A. Ye.; Zamanov, N. V.; Moiseenko, V. E.; Burchenko, P. Ya.; Lozin, A. V.; Tsybenko, S. A.; Tarasov, I. K.; Pankratov, I. M.; Grekov, D. L.; Beletskii, A. A.; Kasilov, A. A.; Voitsenya, V. S.; Pashnev, V. K.; Konovalov, V. G.; Shapoval, A. N.; Mironov, Yu. K.; Romanov, V. S.

2014-08-01

In the ℓ = 3 Uragan-3M torsatron, hydrogen plasma is produced and heated by RF fields in the Alfvén range of frequencies (ω ≲ ω ci ). To this end, a frame antenna with a broad spectrum of generated parallel wavenumbers is used. The RF discharge evolution is studied experimentally at different values of the RF power fed to the antenna (the anode voltage of the oscillator and the antenna current) and the initial pressure of the fueling gas. It is shown that, depending on the antenna current and hydrogen pressure, the discharge can operate in two regimes differing in the plasma density, temperature, and particle loss. The change in the discharge regime with increasing anode voltage is steplike in character. The particular values of the anode voltage and pressure at which the change occurs are affected by RF preionization or breakdown stabilization by a microwave discharge. The obtained results will be used in future experiments to choose the optimal regimes of the frame-antenna-produced RF discharge as a target for the production and heating of a denser plasma by another, shorter wavelength three-half-turn antenna.

Radio frequency sheaths in an oblique magnetic field

DOE PAGES

Myra, James R.; D'Ippolito, Daniel A.

2015-06-01

The physics of radio-frequency (rf) sheaths near a conducting surface is studied for plasmas immersed in a magnetic field that makes an oblique angle θ with the surface. A set of one-dimensional equations is developed that describe the dynamics of the time-dependent magnetic presheath and non-neutral Debye sheath. The model employs Maxwell-Boltzmann electrons, and the magnetization and mobility of the ions is determined by the magnetic field strength, and wave frequency, respectively. The angle, θ assumed to be large enough to insure an electron-poor sheath, is otherwise arbitrary. Concentrating on the ion-cyclotron range of frequencies, the equations are solved numericallymore » to obtain the rectified (dc) voltage, the rf voltage across the sheath and the rf current flowing through the sheath. As an application of this model, the sheath voltage-current relation is used to obtain the rf sheath impedance, which in turn gives an rf sheath boundary condition for the electric field at the sheath-plasma interface that can be used in rf wave codes. In general the impedance has both resistive and capacitive contributions, and generalizes previous sheath boundary condition models. The resistive part contributes to parasitic power dissipation at the wall.« less

Modeling of an 8-12 GHz receiver front-end based on an in-line MEMS frequency discriminator

NASA Astrophysics Data System (ADS)

Chu, Chenlei; Liao, Xiaoping

2018-06-01

This paper focuses on the modeling of an 8-12 GHz RF (radio frequency) receiver front-end based on an in-line MEMS (microelectromechanical systems) frequency discriminator. Actually, the frequency detection is realized by measuring the output dc thermal voltage generated by the MEMS thermoelectric power sensor. Based on this thermal voltage, it has a great potential to tune the resonant frequency of the VCO (voltage controlled oscillator) in the RF receiver front-end application. The equivalent circuit model of the in-line frequency discriminator is established and the measurement verification is also implemented. Measurement and simulation results show that the output dc thermal voltage has a nearly linear relation with frequency. A new construction of RF receiver front-end is then obtained by connecting the in-line frequency discriminator with the voltage controlling port of VCO. Lastly, a systemic simulation is processed by computer-aided software and the real-time simulation waveform at each key point is observed clearly.

Coaxial cable stripping device facilitates RF cabling fabrication

NASA Technical Reports Server (NTRS)

Hughes, R. S.; Tobias, R. A.

1967-01-01

Coaxial cable stripping device assures clean, right angled shoulder for RF cable connector fabrication. This method requires minimal skill and creates a low voltage standing wave ratio and mechanical stability in the interconnecting RF Cables.

Multiharmonic rf feedforward system for compensation of beam loading and periodic transient effects in magnetic-alloy cavities of a proton synchrotron

NASA Astrophysics Data System (ADS)

Tamura, Fumihiko; Ohmori, Chihiro; Yamamoto, Masanobu; Yoshii, Masahito; Schnase, Alexander; Nomura, Masahiro; Toda, Makoto; Shimada, Taihei; Hasegawa, Katsushi; Hara, Keigo

2013-05-01

Beam loading compensation is a key for acceleration of a high intensity proton beam in the main ring (MR) of the Japan Proton Accelerator Research Complex (J-PARC). Magnetic alloy loaded rf cavities with a Q value of 22 are used to achieve high accelerating voltages without a tuning bias loop. The cavity is driven by a single harmonic (h=9) rf signal while the cavity frequency response also covers the neighbor harmonics (h=8,10). Therefore the wake voltage induced by the high intensity beam consists of the three harmonics, h=8,9,10. The beam loading of neighbor harmonics is the source of periodic transient effects and a possible source of coupled bunch instabilities. In the article, we analyze the wake voltage induced by the high intensity beam. We employ the rf feedforward method to compensate the beam loading of these three harmonics (h=8,9,10). The full-digital multiharmonic feedforward system was developed for the MR. We describe the system architecture and the commissioning methodology of the feedforward patterns. The commissioning of the feedforward system has been performed by using high intensity beams with 1.0×1014 proteins per pulse. The impedance seen by the beam is successfully reduced and the longitudinal oscillations due to the beam loading are reduced. By the beam loading compensation, stable high power beam operation is achieved. We also report the reduction of the momentum loss during the debunching process for the slow extraction by the feedforward.

The radio-frequency fluctuation effect on the floating harmonic method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaewon; Kim, Kyung-Hyun; Kim, Dong-Hwan

2016-08-15

The radio-frequency (RF) plasma diagnostics with an electrical probe facing a challenge, because the RF fluctuation oscillates the plasma potential and distorts the current-voltage (I-V) curve. As Langmuir probe is widely used in plasma diagnostics, many researchers have been studying the effect of RF fluctuation on probe and compensation methods. On the other hand, there have not been enough studies on the fluctuation effect on the floating harmonic method. Therefore, we investigated the impact of RF fluctuation on the floating harmonic method theoretically and experimentally. When the electrons are in ideal Maxwellian distribution, the floating potential is negatively shifted bymore » the RF fluctuation, but the fluctuation does not distort I-V curve around the floating potential. However, in practical plasmas, the I-V curve and their harmonic components are distorted. This RF fluctuation effect becomes more significant in a low density plasma with a high impedance sheath. The second harmonic current decreases with the RF fluctuation while the first harmonic current is merely affected. Therefore, the electron temperatures measured with the floating harmonic method under low density plasma with uncompensated probe are overestimated than the results obtained with the compensated probe.« less

Technique for enhancing the power output of an electrostatic generator employing parametric resonance

DOEpatents

Post, Richard F.

2016-02-23

A circuit-based technique enhances the power output of electrostatic generators employing an array of axially oriented rods or tubes or azimuthal corrugated metal surfaces for their electrodes. During generator operation, the peak voltage across the electrodes occurs at an azimuthal position that is intermediate between the position of minimum gap and maximum gap. If this position is also close to the azimuthal angle where the rate of change of capacity is a maximum, then the highest rf power output possible for a given maximum allowable voltage at the minimum gap can be attained. This rf power output is then coupled to the generator load through a coupling condenser that prevents suppression of the dc charging potential by conduction through the load. Optimized circuit values produce phase shifts in the rf output voltage that allow higher power output to occur at the same voltage limit at the minimum gap position.

Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

NASA Astrophysics Data System (ADS)

Thakur, S. K.; Kumar, Y.

2018-05-01

This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

Spin transfer driven resonant expulsion of a magnetic vortex core for efficient rf detector

NASA Astrophysics Data System (ADS)

Menshawy, S.; Jenkins, A. S.; Merazzo, K. J.; Vila, L.; Ferreira, R.; Cyrille, M.-C.; Ebels, U.; Bortolotti, P.; Kermorvant, J.; Cros, V.

2017-05-01

Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency (rf) detection using the spin diode rectification effect in spin torque nano-oscillators (STNOs). In this study, we focus on a new phenomenon, the resonant expulsion of a magnetic vortex in STNOs. This effect is observed when the excitation vortex radius, due to spin torques associated to rf currents, becomes larger than the actual radius of the STNO. This vortex expulsion is leading to a sharp variation of the voltage at the resonant frequency. Here we show that the detected frequency can be tuned by different parameters; furthermore, a simultaneous detection of different rf signals can be achieved by real time measurements with several STNOs having different diameters. This result constitutes a first proof-of-principle towards the development of a new kind of nanoscale rf threshold detector.

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, Thomas E.

1997-01-01

A micropower RF transdponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life.

Ion trap device

DOEpatents

Ibrahim, Yehia M.; Smith, Richard D.

2016-01-26

An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, T.E.

1997-05-13

A micropower RF transponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life. 13 figs.

The contribution of radio-frequency rectification to field-aligned losses of high-harmonic fast wave power to the divertor in the National Spherical Torus eXperiment

DOE PAGES

Perkins, R. J.; Hosea, J. C.; Jaworski, M. A.; ...

2015-04-13

The National Spherical Torus eXperiment (NSTX) can exhibit a major loss of high-harmonic fast wave (HHFW) power along scrape-off layer (SOL) field lines passing in front of the antenna, resulting in bright and hot spirals on both the upper and lower divertor regions. One possible mechanism for this loss is RF sheaths forming at the divertors. We demonstrate that swept-voltage Langmuir probe characteristics for probes under the spiral are shifted relative to those not under the spiral in a manner consistent with RF rectification. We estimate both the magnitude of the RF voltage across the sheath and the sheath heatmore » flux transmission coefficient in the presence of the RF field. Though the precise comparison between computed heat flux and infrared (IR) thermography cannot yet be made, the computed heat deposition compares favorably with the projections from IR camera measurements. The RF sheath losses are significant and contribute substantially to the total SOL losses of HHFW power to the divertor for the cases studied. Our work will guide future experimentation on NSTX-U, where a wide-angle IR camera and a dedicated set of coaxial Langmuir probes for measuring the RF sheath voltage directly will quantify the contribution of RF sheath rectification to the heat deposition from the SOL to the divertor.« less

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

NASA Astrophysics Data System (ADS)

Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

2014-03-01

Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

Radiometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strickland, J. I.

1985-07-02

A radiometer of the switched type has an R.F. switch connecting a detector selectively either to an antenna whose temperature (in terms of noise energy) is to be determined, or to a reference temperature, i.e. a resistive termination. The detector output is passed through an amplifier whose gain is switched between positive and negative values (for example +1 and -1) synchronously with the R.F. switch. The output of the switched gain amplifier is integrated to produce a rising voltage when the gain is positive and a falling one when it is negative. When it is positive the detector is connectedmore » to the antenna. By means of a zero crossing detector, a counter is started when this voltage crosses zero. After a fixed period, the R.F. switch and switched gain amplifier are reversed by the counter to cause the voltage to fall in accordance with the temperature of the resistive termination. The zero crossing detector and a counter measure the time interval until the voltage again crosses zero, such time interval being compared to the fixed period to provide a comparison of the unknown and reference temperatures independent of the gain of the detector, which is a valuable improvement over prior radiometers. Also, by measuring time rather than voltage, the arrangement facilitates providing a digital output more suitable for storage and transmission of the data than the analog output of prior radiometers. The instrument, which is relatively simple, rugged and compact, lends itself well to unattended use in monitoring the effect of rain storms on transmission in the 11.7 to 12.2 GHz band employed for satelite communication.« less

Transformation of Rhodococcus fascians by High-Voltage Electroporation and Development of R. fascians Cloning Vectors

PubMed Central

Desomer, Jan; Dhaese, Patrick; Montagu, Marc Van

1990-01-01

The analysis of the virulence determinants of phytopathogenic Rhodococcus fascians has been hampered by the lack of a system for introducing exogenous DNA. We investigated the possibility of genetic transformation of R. fascians by high-voltage electroporation of intact bacterial cells in the presence of plasmid DNA. Electrotransformation in R. fascians D188 resulted in transformation frequencies ranging from 105/μg of DNA to 107/μg of DNA, depending on the DNA concentration. The effects of different electrical parameters and composition of electroporation medium on transformation efficiency are presented. By this transformation method, a cloning vector (pRF28) for R. fascians based on an indigenous 160-kilobase (chloramphenicol and cadmium resistance-encoding) plasmid pRF2 from strain NCPPB 1675 was developed. The origin of replication and the chloramphenicol resistance gene on pRF28 were used to construct cloning vectors that are capable of replication in R. fascians and Escherichia coli. The electroporation method presented was efficient enough to allow detection of the rare integration of replication-deficient pRF28 derivatives in the R. fascians D188 genome via either homologous or illegitimate recombination. Images PMID:16348290

Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Yang; Yang, Lin’an, E-mail: layang@xidian.edu.cn; Chen, Qing

2016-05-15

A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz IMPATT diodes has been carried out in this paper. It is shown that the negative differential mobility (NDM) characteristics of GaN coupled with the space charge effect acting as a self-feedback system can markedly increase the drift velocity of injection carriers, and thereby enhance diode performance under appropriate external RF voltage. The behavior of traveling electrons in the transit zone is investigated in detail. It is found that the IMPATT diode with a punch-through structure operating in the NDM mode exhibits superior characteristics compared with the equivalent diode operating in themore » Si-like constant mobility mode. In particular, the NDM-mode diode can tolerate a larger RF voltage swing than that operating in constant mobility mode. Numerical simulation results reveal that the highest efficiency of 26.6% and maximum RF power of 2.29 W can be achieved for the NDM-mode diode at a frequency of 225 GHz. A highest efficiency of 19.0% and maximum RF power of 1.58 W are obtained for the diode with constant mobility.« less

Transition from Townsend to radio-frequency homogeneous dielectric barrier discharge in a roll-to-roll configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazinette, R.; SIAME, Université de Pau et des Pays de l'Adour, Pau; Paillol, J.

The aim of this paper is to better understand the transition from Townsend to radio-frequency homogeneous dielectric barrier discharge (DBD) at atmospheric pressure. The study is done in an Ar/NH{sub 3} Penning mixture for an electrode configuration adapted to roll-to-roll plasma surface treatment. The study was led in a frequency range running from 50 kHz up to 8.3 MHz leading to different DBD modes with a 1 mm gas gap: Glow (GDBD), Townsend (TDBD), and Radio-frequency (RF-DBD). In the frequency range between TDBD and RF-DBD, from 250 kHz to 2.3 MHz, additional discharges are observed outside the inter-electrode gas gap. Because each high voltagemore » electrode are inside a dielectric barrel, these additional discharges occur on the side of the barrel where the gap is larger. They disappear when the RF-DBD mode is attained in the 1 mm inter-electrode gas gap, i.e., for frequencies equal or higher than 3 MHz. Fast imaging and optical emission spectroscopy show that the additional discharges are radio-frequency DBDs while the inter-electrode discharge is a TDBD. The RF-DBD discharge mode is attained when electrons drift becomes low enough compared to the voltage oscillation frequency to limit electron loss at the anode. To check that the additional discharges are due to a larger gas gap and a lower voltage amplitude, the TDBD/RF-DBD transition is investigated as a function of the gas gap and the applied voltage frequency and amplitude. Results show that the increase in the frequency at constant gas gap or in the gas gap at constant frequency allows to obtain RF-DBD instead of TDBD. At low frequency and large gap, the increase in the applied voltage allows RF-DBD/TDBD transition. As a consequence, an electrode configuration allowing different gap values is a solution to successively have different discharge modes with the same applied voltage.« less

Double and triple-harmonic RF buckets and their use for bunch squeezing in AGS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gardner, C. J.

2016-08-24

For the past several years we have merged bunches in AGS in order to achieve the desired intensity per bunch prior to injection into RHIC. The merging is done on a flat porch at or above AGS injection energy. Because the merges involve the reduction of the RF harmonic number by a factor of 2 (for a 2 to 1 merge) and then a factor of 3 (for a 3 to 1 merge), one requires RF frequencies 6hf s, 3hf s, 2hf s and hf s, where f s is the revolution frequency on the porch and h = 4more » is the fundamental harmonic number. The standard AGS RF cavities cannot operate at the lowest frequencies 2hf s and hf s; these are provided by two modified cavities. Upon completion of the merges, the bunches are sitting in harmonic h buckets. In order to be accelerated they need to be squeezed into harmonic 3h buckets. This is accomplished by producing a double-harmonic bucket in which harmonics h and 2h act in concert, and then a triple-harmonic bucket in which harmonics h, 2h, and 3h act in concert. Simulations have shown that the squeeze presents an acceptance bottleneck which limits the longitudinal emittance that can be put into the harmonic 3h bucket. In this note the areas of the double and triple-harmonic buckets are calculated explicitly, and it is shown that these go through a minimum as the RF voltages are raised to the desired values. Several RF voltage ranges are examined, and the acceptance bottleneck is determined for each of these. Finally, the acceptance bottleneck for Au77+ bunches in AGS is calculated for several RF voltage ranges. The main result is that the RF voltages for the low-frequency harmonic h and 2h cavities both must be at least 22 kV in order to achieve an acceptance of 0:6 eV s per nucleon. If the harmonic h and 2h voltages are 15 and 22 kV, respectively, then the acceptance is reduced to 0:548 eV s per nucleon.« less

High stability buffered phase comparator

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1984-01-01

A low noise RF signal phase comparator comprised of two high stability driver buffer amplifiers driving a double balanced mixer which operate to generate a beat frequency between the two RF input signals coupled to the amplifiers from the RF sources is described. The beat frequency output from the mixer is applied to a low noise zero crossing detector which is the phase difference between the two RF inputs. Temperature stability is provided by mounting the amplifiers and mixer on a common circuit board with the active circuit elements located on one side of a circuit board and the passive circuit elements located on the opposite side. A common heat sink is located adjacent the circuit board. The active circuit elements are embedded into the bores of the heat sink which slows the effect of ambient temperature changes and reduces the temperature gradients between the active circuit elements, thus improving the cancellation of temperature effects. The two amplifiers include individual voltage regulators, which increases RF isolation.

Automatic control of finite element models for temperature-controlled radiofrequency ablation.

PubMed

Haemmerich, Dieter; Webster, John G

2005-07-14

The finite element method (FEM) has been used to simulate cardiac and hepatic radiofrequency (RF) ablation. The FEM allows modeling of complex geometries that cannot be solved by analytical methods or finite difference models. In both hepatic and cardiac RF ablation a common control mode is temperature-controlled mode. Commercial FEM packages don't support automating temperature control. Most researchers manually control the applied power by trial and error to keep the tip temperature of the electrodes constant. We implemented a PI controller in a control program written in C++. The program checks the tip temperature after each step and controls the applied voltage to keep temperature constant. We created a closed loop system consisting of a FEM model and the software controlling the applied voltage. The control parameters for the controller were optimized using a closed loop system simulation. We present results of a temperature controlled 3-D FEM model of a RITA model 30 electrode. The control software effectively controlled applied voltage in the FEM model to obtain, and keep electrodes at target temperature of 100 degrees C. The closed loop system simulation output closely correlated with the FEM model, and allowed us to optimize control parameters. The closed loop control of the FEM model allowed us to implement temperature controlled RF ablation with minimal user input.

Detector power linearity requirements and verification techniques for TMI direct detection receivers

NASA Technical Reports Server (NTRS)

Reinhardt, Victor S. (Inventor); Shih, Yi-Chi (Inventor); Toth, Paul A. (Inventor); Reynolds, Samuel C. (Inventor)

1997-01-01

A system (36, 98) for determining the linearity of an RF detector (46, 106). A first technique involves combining two RF signals from two stable local oscillators (38, 40) to form a modulated RF signal having a beat frequency, and applying the modulated RF signal to a detector (46) being tested. The output of the detector (46) is applied to a low frequency spectrum analyzer (48) such that a relationship between the power levels of the first and second harmonics generated by the detector (46) of the beat frequency of the modulated RF signal are measured by the spectrum analyzer (48) to determine the linearity of the detector (46). In a second technique, an RF signal from a local oscillator (100) is applied to a detector (106) being tested through a first attenuator (102) and a second attenuator (104). The output voltage of the detector (106) is measured when the first attenuator (102) is set to a particular attenuation value and the second attenuator (104) is switched between first and second attenuation values. Further, the output voltage of the detector (106) is measured when the first attenuator (102) is set to another attenuation value, and the second attenuator (104) is again switched between the first and second attenuation values. A relationship between the voltage outputs determines the linearity of the detector (106).

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

Efficient 30-W, 140-MHz rf amplifier for CW CO2 waveguide laser excitation

NASA Technical Reports Server (NTRS)

Hochuli, U. E.; Haldemann, P. R.

1988-01-01

Details of a 30-W, 140-MHz rf amplifier for CW CO2 waveguide laser excitation are presented. The amplifier delivers 30 W into a 50-Ohm load while requiring only 40 W of dc power from a 28-V supply and 100 mW of rf drive power for an overall efficiency of 75 percent. A coupling-starting network design theory is given that provides the initiation over voltage for the discharge plasma from an rf power source of limited output voltage capability. The network then matches the drive circuit to the new input impedance of the operating discharge without any adjustments. This design theory applies to the whole class of networks whose losses can be approximated by a loss conductance in parallel with the gas discharge.

Enhanced dynamical stability with harmonic slip stacking

DOE PAGES

Eldred, Jeffrey; Zwaska, Robert

2016-10-26

We develop a configuration of radio-frequency (rf) cavities to dramatically improve the performance of slip-stacking. Slip-stacking is an accumulation technique used at Fermilab to nearly double proton intensity by maintaining two beams of different momenta in the same storage ring. The two particle beams are longitudinally focused in the Recycler by two 53 MHz 100 kV rf cavities with a small frequency difference between them. We propose an additional 106 MHz 20 kV rf cavity with a frequency at the double the average of the upper and lower main rf frequencies. We show the harmonic rf cavity cancels out themore » resonances generated between the two main rf cavities and we derive the relationship between the harmonic rf voltage and the main rf voltage. We find the area factors that can be used to calculate the available phase space area for any set of beam parameters without individual simulation. We establish Booster beam quality requirements to achieve 99\\% slip-stacking efficiency. We measure the longitudinal distribution of the Booster beam and use it to generate a realistic beam model for slip-stacking simulation. In conclusion, we demonstrate that the harmonic rf cavity can not only reduce particle loss during slip-stacking, but also reduce the final longitudinal emittance.« less

Enhanced dynamical stability with harmonic slip stacking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldred, Jeffrey; Zwaska, Robert

We develop a configuration of radio-frequency (rf) cavities to dramatically improve the performance of slip-stacking. Slip-stacking is an accumulation technique used at Fermilab to nearly double proton intensity by maintaining two beams of different momenta in the same storage ring. The two particle beams are longitudinally focused in the Recycler by two 53 MHz 100 kV rf cavities with a small frequency difference between them. We propose an additional 106 MHz 20 kV rf cavity with a frequency at the double the average of the upper and lower main rf frequencies. We show the harmonic rf cavity cancels out themore » resonances generated between the two main rf cavities and we derive the relationship between the harmonic rf voltage and the main rf voltage. We find the area factors that can be used to calculate the available phase space area for any set of beam parameters without individual simulation. We establish Booster beam quality requirements to achieve 99\\% slip-stacking efficiency. We measure the longitudinal distribution of the Booster beam and use it to generate a realistic beam model for slip-stacking simulation. In conclusion, we demonstrate that the harmonic rf cavity can not only reduce particle loss during slip-stacking, but also reduce the final longitudinal emittance.« less

Design challenges of EO polymer based leaky waveguide deflector for 40 Gs/s all-optical analog-to-digital converters

NASA Astrophysics Data System (ADS)

Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.

2016-08-01

Design challenges and performance optimization of an all-optical analog-to-digital converter (AOADC) is presented here. The paper addresses both microwave and optical design of a leaky waveguide optical deflector using electro-optic (E-O) polymer. The optical deflector converts magnitude variation of the applied RF voltage into variation of deflection angle out of a leaky waveguide optical beam using the linear E-O effect (Pockels effect) as part of the E-O polymer based optical waveguide. This variation of deflection angle as result of the applied RF signal is then quantized using optical windows followed by an array of high-speed photodetectors. We optimized the leakage coefficient of the leaky waveguide and its physical length to achieve the best trade-off between bandwidth and the deflected optical beam resolution, by improving the phase velocity matching between lightwave and microwave on one hand and using pre-emphasis technique to compensate for the RF signal attenuation on the other hand. In addition, for ease of access from both optical and RF perspective, a via-hole less broad bandwidth transition is designed between coplanar pads and coupled microstrip (CPW-CMS) driving electrodes. With the best reported E-O coefficient of 350 pm/V, the designed E-O deflector should allow an AOADC operating over 44 giga-samples-per-seconds with an estimated effective resolution of 6.5 bits on RF signals with Nyquist bandwidth of 22 GHz. The overall DC power consumption of all components used in this AOADC is of order of 4 W and is dominated by power consumption in the power amplifier to generate a 20 V RF voltage in 50 Ohm system. A higher sampling rate can be achieved at similar bits of resolution by interleaving a number of this elementary AOADC at the expense of a higher power consumption.

Investigation of microstructural and electrical properties of composition dependent co-sputtered Hf1-x Ta x O2 thin films

NASA Astrophysics Data System (ADS)

Das, K. C.; Tripathy, N.; Ghosh, S. P.; Mohanta, S. K.; Nakamura, A.; Kar, J. P.

2017-11-01

Tantalum doped HfO2 gate dielectric thin films were deposited on silicon substrates using RF reactive co-sputtering by varying RF power of Ta target from 15 W to 90 W. The morphological, compositional and electrical properties of Hf1-x Ta x O2 films were systematically investigated. The Ta content was found to be increased up to 21% for a Ta target power of 90 W. The evolution of monoclinic phase of Hf1-x Ta x O2 was seen from XRD study upto RF power of 60 W and afterwards, the amorphous like behaviour is appeared. The featureless smooth surface with the decrease in granular morphology has been observed from FESEM micrographs of the doped films at higher RF powers of Ta. The flatband voltage is found to be shifted towards negative voltage in the capacitance-voltage plot, which was attributed to the enhancement in positive oxide charge density with rise in RF power. The interface charge density has a minimum value of 7.85  ×  1011 eV-1 cm-2 for the film deposited at Ta RF power of 75 W. The Hf1-x Ta x O2 films deposited at Ta target RF power of 90 W has shown lower leakage current. The high on/off ratio of the current during the set process in Hf1-x Ta x O2 based memristors is found suitable for bipolar resistive switching memory device applications.

Power matching between plasma generation and electrostatic acceleration in helicon electrostatic thruster

NASA Astrophysics Data System (ADS)

Ichihara, D.; Nakagawa, Y.; Uchigashima, A.; Iwakawa, A.; Sasoh, A.; Yamazaki, T.

2017-10-01

The effects of a radio-frequency (RF) power on the ion generation and electrostatic acceleration in a helicon electrostatic thruster were investigated with a constant discharge voltage of 300 V using argon as the working gas at a flow rate either of 0.5 Aeq (Ampere equivalent) or 1.0 Aeq. A RF power that was even smaller than a direct-current (DC) discharge power enhanced the ionization of the working gas, thereby both the ion beam current and energy were increased. However, an excessively high RF power input resulted in their saturation, leading to an unfavorable increase in an ionization cost with doubly charged ion production being accompanied. From the tradeoff between the ion production by the RF power and the electrostatic acceleration made by the direct current discharge power, the thrust efficiency has a maximum value at an optimal RF to DC discharge power ratio of 0.6 - 1.0.

Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Lebedev, V.

State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signalmore » on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.« less

High Voltage Test-Stand Research Done on ICRF Antenna Elements of the High-Harmonic Fast-Wave System of NSTX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkins, R. J.; Ahn, J.W.; Bortolon, A.

The twelve-strap high-harmonic fast-wave (HHFW) antenna on NSTX has exhibited a high-voltage standoff around 25 kV during previous experimental campaigns; this standoff needs to be improved for increased power coupling. During the recent NSTX-U upgrade period, a test-stand was set up with two antenna straps along with Faraday screens for testing purposes. Using a diagnostic suite consisting of a fast camera, a residual gas analyzer, a pressure gage, high-voltage probes, and an infrared camera, several interesting discoveries were made, leading to possible improvements of the antenna RF voltage operation level. First, arcing was observed outside the Faraday shields towards themore » low-voltage ("grounded") end of the straps (faraday shield box ends); this arcing was successfully eliminated by installing an additional grounding point between the Faraday shield box and the vessel wall. Second, considerable outgassing was observed during the RF pulse and the amount of outgassing was found to decrease with increasing RF power, possibly indicative of multipacting. Finally, infrared camera measurements of heating on the Faraday shield assembly suggest that the return currents on the Faraday shield box are highly localized at the box sides and possibly account for the pressure increase observed. Computations of these RF currents using Microwave Studio show qualitative agreement with the heated regions. New grounding points between the antenna box and the vessel have been implemented in NSTX-U, where future tests will be done to determine if the high-voltage standoff has improved. Further antenna improvements will be sought through future experiments on the test stand.« less

A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive

NASA Astrophysics Data System (ADS)

Kang, S.; Kim, H. C.; Chun, K.

2009-03-01

Our goal was to develop a single-pole four-throw (SP4T) radio frequency microelectromechanical system (RF MEMS) switch for band selection in a multi-band, multi-mode, front-end module of a wireless transceiver system. The SP4T RF MEMS switch was based on an arrangement of four single-pole single-throw (SPST) RF MEMS switches. The SP4T RF MEMS switch was driven by a double stop (DS) comb drive, with a lateral resistive contact, and composed of single crystalline silicon (SCS) on glass. A large contact force at a low-drive voltage was achieved by electrostatic actuation of the DS comb drive. Good RF characteristics were achieved by the large contact force and the lateral resistive Au-to-Au contact. Mechanical reliability was achieved by using SCS which has no residual stress as a structure material. The developed SP4T RF MEMS switch has a drive voltage of 15 V, an insertion loss below 0.31 dB at 6 GHz after more than one million cycles under a 10 mW signal, a return loss above 20 dB and an isolation value above 36 dB.

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

NASA Astrophysics Data System (ADS)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Theoretical study of a dual harmonic system and its application to the CSNS/RCS

NASA Astrophysics Data System (ADS)

Yuan, Yao-Shuo; Wang, Na; Xu, Shou-Yan; Yuan, Yue; Wang, Sheng

2015-12-01

Dual harmonic systems have been widely used in high intensity proton synchrotrons to suppress the space charge effect, as well as reduce the beam loss. To investigate the longitudinal beam dynamics in a dual rf system, the potential well, the sub-buckets in the bunch and the multi-solutions of the phase equation are studied theoretically in this paper. Based on these theoretical studies, optimization of bunching factor and rf voltage waveform are made for the dual harmonic rf system in the upgrade phase of the China Spallation Neutron Source Rapid Cycling Synchrotron (CSNS/RCS). In the optimization process, the simulation with space charge effect is done using a newly developed code, C-SCSIM. Supported by National Natural Science Foundation of China (11175193)

Breakdown phenomena in radio-frequency helium microdischarges

NASA Astrophysics Data System (ADS)

Radmilovic-Radjenovic, M.; Radjenovic, B.; Nina, A.

2008-07-01

In this paper, the Kihara equation has been applied in order to determine the breakdown voltage in helium rf microdischarges. It was found that the Kihara equation, with modified moleculer constants, describes the breakdown process well even for gaps of the order of a few millimeters. A good agreement between numerical solutions of the Kihara equation and the available experimental data reveals that the breakdown voltages depend on the pd product and vary substantially with changes in rf frequencies.

Effect of Electron Seeding on Experimentally Measured Multipactor Discharge Threshold

NASA Astrophysics Data System (ADS)

Noland, Jonathan; Graves, Timothy; Lemon, Colby; Looper, Mark; Farkas, Alex

2012-10-01

Multipactor is a vacuum phenomenon in which electrons, moving in resonance with an externally applied electric field, impact material surfaces. If the number of secondary electrons created per primary electron impact averages more than unity, the resonant interaction can lead to an electron avalanche. Multipactor is a generally undesirable phenomenon, as it can cause local heating, absorb power, or cause detuning of RF circuits. In order to increase the probability of multipactor initiation, test facilities often employ various seeding sources such as radioactive sources (Cesium 137, Strontium 90), electron guns, or photon sources. Even with these sources, the voltage for multipactor initiation is not certain as parameters such as material type, RF pulse length, and device wall thickness can all affect seed electron flux and energy in critical gap regions, and hence the measured voltage threshold. This study investigates the effects of seed electron source type (e.g., photons versus beta particles), material type, gap size, and RF pulse length variation on multipactor threshold. In addition to the experimental work, GEANT4 simulations will be used to estimate the production rate of low energy electrons (< 5 keV) by high energy electrons and photons. A comparison of the experimental fluxes to the typical energetic photon and particle fluxes experienced by spacecraft in various orbits will also be made. Initial results indicate that for a simple, parallel plate device made of aluminum, there is no threshold variation (with seed electrons versus with no seed electrons) under continuous-wave RF exposure.

Pulsed Laser Illumination of Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland; Jenkins, Philip; Landis, Geoffrey A.

1994-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic array receivers to provide remote power. The induction FEL and the radio-frequency (RF) FEL both produce pulsed rather than continuous output. In this work, we investigate cell response to pulsed laser light which simulates the RF FEL format, producing 50 ps pulses at a frequency of 78 MHz. A variety of Si, GaAs, CaSb and CdInSe2 (CIS) solar cells are tested at average incident powers between 4 mW/sq cm and 425 mW/sq cm. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced by using a pulsed laser source compared to constant illumination at the same wavelength. Because the pulse separation is less than or approximately equal to the minority carrier lifetime, the illumination conditions are effectively those of a continuous wave laser. The time dependence of the voltage and current response of the cells are also measured using a sampling oscilloscope equipped with a high frequency voltage probe and current transformer. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments shows that the RF FEL pulse format yields much more efficient photovoltaic conversion of light than does an induction FEL pulse format.

Automatic control of finite element models for temperature-controlled radiofrequency ablation

PubMed Central

Haemmerich, Dieter; Webster, John G

2005-01-01

Background The finite element method (FEM) has been used to simulate cardiac and hepatic radiofrequency (RF) ablation. The FEM allows modeling of complex geometries that cannot be solved by analytical methods or finite difference models. In both hepatic and cardiac RF ablation a common control mode is temperature-controlled mode. Commercial FEM packages don't support automating temperature control. Most researchers manually control the applied power by trial and error to keep the tip temperature of the electrodes constant. Methods We implemented a PI controller in a control program written in C++. The program checks the tip temperature after each step and controls the applied voltage to keep temperature constant. We created a closed loop system consisting of a FEM model and the software controlling the applied voltage. The control parameters for the controller were optimized using a closed loop system simulation. Results We present results of a temperature controlled 3-D FEM model of a RITA model 30 electrode. The control software effectively controlled applied voltage in the FEM model to obtain, and keep electrodes at target temperature of 100°C. The closed loop system simulation output closely correlated with the FEM model, and allowed us to optimize control parameters. Discussion The closed loop control of the FEM model allowed us to implement temperature controlled RF ablation with minimal user input. PMID:16018811

A novel photonic oscillator

NASA Technical Reports Server (NTRS)

Yao, X. S.; Maleki, L.

1995-01-01

We report a novel oscillator for photonic RF systems. This oscillator is capable of generating high-frequency signals up to 70 GHz in both electrical and optical domains and is a special voltage-controlled oscillator with an optical output port. It can be used to make a phase-locked loop (PLL) and perform all functions that a PLL is capable of for photonic systems. It can be synchronized to a reference source by means of optical injection locking, electrical injection locking, and PLL. It can also be self-phase locked and self-injection locked to generate a high-stability photonic RF reference. Its applications include high-frequency reference regeneration and distribution, high-gain frequency multiplication, comb-frequecy and square-wave generation, carrier recovery, and clock recovery. We anticipate that such photonic voltage-controlled oscillators (VCOs) will be as important to photonic RF systems as electrical VCOs are to electrical RF systems.

Spin-torque resonant expulsion of the vortex core for an efficient radiofrequency detection scheme.

PubMed

Jenkins, A S; Lebrun, R; Grimaldi, E; Tsunegi, S; Bortolotti, P; Kubota, H; Yakushiji, K; Fukushima, A; de Loubens, G; Klein, O; Yuasa, S; Cros, V

2016-04-01

It has been proposed that high-frequency detectors based on the so-called spin-torque diode effect in spin transfer oscillators could eventually replace conventional Schottky diodes due to their nanoscale size, frequency tunability and large output sensitivity. Although a promising candidate for information and communications technology applications, the output voltage generated from this effect has still to be improved and, more pertinently, reduces drastically with decreasing radiofrequency (RF) current. Here we present a scheme for a new type of spintronics-based high-frequency detector based on the expulsion of the vortex core in a magnetic tunnel junction (MTJ). The resonant expulsion of the core leads to a large and sharp change in resistance associated with the difference in magnetoresistance between the vortex ground state and the final C-state configuration. Interestingly, this reversible effect is independent of the incoming RF current amplitude, offering a fast real-time RF threshold detector.

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

PubMed Central

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M.

2012-01-01

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance. PMID:23202014

Optimization of passive low power wireless electromagnetic energy harvesters.

PubMed

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M

2012-10-11

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at -30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E.

It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths andmore » the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.« less

Automatic tuned MRI RF coil for multinuclear imaging of small animals at 3T.

PubMed

Muftuler, L Tugan; Gulsen, Gultekin; Sezen, Kumsal D; Nalcioglu, Orhan

2002-03-01

We have developed an MRI RF coil whose tuning can be adjusted automatically between 120 and 128 MHz for sequential spectroscopic imaging of hydrogen and fluorine nuclei at field strength 3 T. Variable capacitance (varactor) diodes were placed on each rung of an eight-leg low-pass birdcage coil to change the tuning frequency of the coil. The diode junction capacitance can be controlled by the amount of applied reverse bias voltage. Impedance matching was also done automatically by another pair of varactor diodes to obtain the maximum SNR at each frequency. The same bias voltage was applied to the tuning varactors on all rungs to avoid perturbations in the coil. A network analyzer was used to monitor matching and tuning of the coil. A Pentium PC controlled the analyzer through the GPIB bus. A code written in LABVIEW was used to communicate with the network analyzer and adjust the bias voltages of the varactors via D/A converters. Serially programmed D/A converter devices were used to apply the bias voltages to the varactors. Isolation amplifiers were used together with RF choke inductors to provide isolation between the RF coil and the DC bias lines. We acquired proton and fluorine images sequentially from a multicompartment phantom using the designed coil. Good matching and tuning were obtained at both resonance frequencies. The tuning and matching of the coil were changed from one resonance frequency to the other within 60 s. (c) 2002 Elsevier Science (USA).

Studies on the Extraction Region of the Type VI RF Driven H- Ion Source

NASA Astrophysics Data System (ADS)

McNeely, P.; Bandyopadhyay, M.; Franzen, P.; Heinemann, B.; Hu, C.; Kraus, W.; Riedl, R.; Speth, E.; Wilhelm, R.

2002-11-01

IPP Garching has spent several years developing a RF driven H- ion source intended to be an alternative to the current ITER (International Thermonuclear Experimental Reactor) reference design ion source. A RF driven source offers a number of advantages to ITER in terms of reduced costs and maintenance requirements. Although the RF driven ion source has shown itself to be competitive with a standard arc filament ion source for positive ions many questions still remain on the physics behind the production of the H- ion beam extracted from the source. With the improvements that have been implemented to the BATMAN (Bavarian Test Machine for Negative Ions) facility over the last two years it is now possible to study both the extracted ion beam and the plasma in the vicinity of the extraction grid in greater detail. This paper will show the effect of changing the extraction and acceleration voltage on both the current and shape of the beam as measured on the calorimeter some 1.5 m downstream from the source. The extraction voltage required to operate in the plasma limit is 3 kV. The perveance optimum for the extraction system was determined to be 2.2 x 10-6 A/V3/2 and occurs at 2.7 kV extraction voltage. The horizontal and vertical beam half widths vary as a function of the extracted ion current and the horizontal half width is generally smaller than the vertical. The effect of reducing the co-extracted electron current via plasma grid biasing on the H- current extractable and the beam profile from the source is shown. It is possible in the case of a silver contaminated plasma to reduce the co-extracted electron current to 20% of the initial value by applying a bias of 12 V. In the case where argon is present in the plasma, biasing is observed to have minimal effect on the beam half width but in a pure hydrogen plasma the beam half width increases as the bias voltage increases. New Langmuir probe studies that have been carried out parallel to the plasma grid (in the vicinity of the peak of the external magnetic filter field) and changes to source parameters as a function of power, and argon addition are reported. The behaviour of the electron density is different when the plasma is argon seeded showing a strong increase with RF power. The plasma potential is decreased by 2 V when argon is added to the plasma. The effect of the presence of unwanted silver sputtered from the Faraday screen by Ar+ ions on both the source performance and the plasma parameters is also presented. The silver dramatically downgraded source performance in terms of current density and produced an early saturation of current with applied RF power. Recently, collaboration was begun with the Technical University of Augsburg to perform spectroscopic measurements on the Type VI ion source. The final results of this analysis are not yet ready but some interesting initial observations on the gas temperature, disassociation degree and impurity ions will be presented.

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Ward, John; Lin, Robert; Leon, Rosa; Pearson, John; Mehdi, Imran

2003-01-01

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

Dipole Excitation With A Paul Ion Trap Mass Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacAskill, J. A.; Madzunkov, S. M.; Chutjian, A.

Preliminary results are presented for the use of an auxiliary radiofrequency (rf) excitation voltage in combination with a high purity, high voltage rf generator to perform dipole excitation within a high precision Paul ion trap. These results show the effects of the excitation frequency over a continuous frequency range on the resultant mass spectra from the Paul trap with particular emphasis on ion ejection times, ion signal intensity, and peak shapes. Ion ejection times are found to decrease continuously with variations in dipole frequency about several resonant values and show remarkable symmetries. Signal intensities vary in a complex fashion withmore » numerous resonant features and are driven to zero at specific frequency values. Observed intensity variations depict dipole excitations that target ions of all masses as well as individual masses. Substantial increases in mass resolution are obtained with resolving powers for nitrogen increasing from 114 to 325.« less

FAST TRACK COMMUNICATION: Nanocrystalline silicon film growth morphology control through RF waveform tailoring

NASA Astrophysics Data System (ADS)

Johnson, Erik V.; Verbeke, Thomas; Vanel, Jean-Charles; Booth, Jean-Paul

2010-10-01

We demonstrate the application of RF waveform tailoring to generate an electrical asymmetry in a capacitively coupled plasma-enhanced chemical vapour deposition system, and its use to control the growth mode of hydrogenated amorphous and nanocrystalline silicon thin films deposited at low temperature (150 °C). A dramatic shift in the dc bias potential at the powered electrode is observed when simply inverting the voltage waveform from 'peaks' to 'troughs', indicating an asymmetric distribution of the sheath voltage. By enhancing or suppressing the ion bombardment energy at the substrate (situated on the grounded electrode), the growth of thin silicon films can be switched between amorphous and nanocrystalline modes, as observed using in situ spectroscopic ellipsometry. The effect is observed at pressures sufficiently low that the collisional reduction in average ion bombardment energy is not sufficient to allow nanocrystalline growth (<100 mTorr).

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Bunch beam cooling

NASA Astrophysics Data System (ADS)

Bryzgunov, M. I.; Kamerdzhiev, V.; Li, J.; Mao, L. J.; Parkhomchuk, V. V.; Reva, V. B.; Yang, X. D.; Zhao, H.

2017-07-01

Electron cooling is used for damping both transverse and longitudinal oscillations of heavy particle. The cooling of bunch ion beam (with RF voltage on) is important part of experiments with inner target, ion collision system, stacking and RF manipulation. The short length of an ion bunch increases the peak luminosity, gives a start-time point for using of the time-of-flight methods and obtains a short extraction beam pulse. This article describes the review of last experiments with electron cooling carried out on the CSRm, CSRe (China) and COSY (Germany) storage rings. The accumulated experience may be used for the project of electron cooler on 2.5 MeV (NICA) and 0.5 MeV HIAF for obtaining high luminosity, depressing beam-beam effects and RF manipulation.

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {>=}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {>=}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {ge}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {ge}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Using dust as probes to determine sheath extent and structure

NASA Astrophysics Data System (ADS)

Douglass, Angela; Land, V.; Qiao, K.; Matthews, L.; Hyde, T.

2016-08-01

Two in situ experimental methods are presented in which dust particles are used to determine the extent of the sheath and gain information about the time-averaged electric force profile within a radio frequency (RF) plasma sheath. These methods are advantageous because they are not only simple and quick to carry out, but they also can be performed using standard dusty plasma experimental equipment. In the first method, dust particles are tracked as they fall through the plasma towards the lower electrode. These trajectories are then used to determine the electric force on the particle as a function of height as well as the extent of the sheath. In the second method, dust particle levitation height is measured across a wide range of RF voltages. Similarities were observed between the two experiments, but in order to understand the underlying physics behind these observations, the same conditions were replicated using a self-consistent fluid model. Through comparison of the fluid model and experimental results, it is shown that the particles exhibiting a levitation height that is independent of RF voltage indicate the sheath edge - the boundary between the quasineutral bulk plasma and the sheath. Therefore, both of these simple and inexpensive, yet effective, methods can be applied across a wide range of experimental parameters in any ground-based RF plasma chamber to gain useful information regarding the sheath, which is needed for interpretation of dusty plasma experiments.

Design and Implementation of RF Energy Harvesting System for Low-Power Electronic Devices

NASA Astrophysics Data System (ADS)

Uzun, Yunus

2016-08-01

Radio frequency (RF) energy harvester systems are a good alternative for energizing of low-power electronics devices. In this work, an RF energy harvester is presented to obtain energy from Global System for Mobile Communications (GSM) 900 MHz signals. The energy harvester, consisting of a two-stage Dickson voltage multiplier circuit and L-type impedance matching circuits, was designed, simulated, fabricated and tested experimentally in terms of its performance. Simulation and experimental works were carried out for various input power levels, load resistances and input frequencies. Both simulation and experimental works have been carried out for this frequency band. An efficiency of 45% is obtained from the system at 0 dBm input power level using the impedance matching circuit. This corresponds to the power of 450 μW and this value is sufficient for many low-power devices. The most important parameters affecting the efficiency of the RF energy harvester are the input power level, frequency band, impedance matching and voltage multiplier circuits, load resistance and the selection of diodes. RF energy harvester designs should be optimized in terms of these parameters.

Operational Parameters, Considerations, and Design Decisions for Resource-Constrained Ion Trap Mass Spectrometers

NASA Technical Reports Server (NTRS)

Danell, Ryan M.; VanAmerom, Friso H. W.; Pinnick, Veronica; Cotter, Robert J.; Brickerhoff, William; Mahaffy, Paul

2011-01-01

Mass spectrometers are increasingly finding applications in new and unique areas, often in situations where key operational resources (i.e. power, weight and size) are limited. One such example is the Mars Organic Molecule Analyzer (MOMA). This instrument is a joint venture between NASA and the European Space Agency (ESA) to develop an ion trap mass spectrometer for chemical analysis on Mars. The constraints on such an instrument are significant as are the performance requirements. While the ideal operating parameters for an ion trap are generally well characterized, methods to maintain analytical performance with limited power and system weight need to be investigated and tested. Methods Experiments have been performed on two custom ion trap mass spectrometers developed as prototypes for the MOMA instrument. This hardware consists of quadrupole ion trap electrodes that are 70% the size of common commercial instrumentation. The trapping RF voltage is created with a custom tank circuit that can be tuned over a range of RF frequencies and is driven using laboratory supplies and amplifiers. The entire instrument is controlled with custom Lab VIEW software that allows a high degree of flexibility in the definition of the scan function defining the ion trap experiment. Ions are typically generated via an internal electron ionization source, however, a laser desorption source is also in development for analysis of larger intact molecules. Preliminary Data The main goals in this work have been to reduce the power required to generate the radio frequency trapping field used in an ion trap mass spectrometer. Generally minimizing the power will also reduce the volume and mass of the electronics to support the instrument. In order to achieve optimum performance, commercial instruments typically utilize RF frequencies in the 1 MHz range. Without much concern for power usage, they simply generate the voltage required to access the mass range of interest. In order to reduce the required RF voltage (and power), operation of the ion trap at lower RF frequencies has been investigated. Surprisingly, the performance of the instrument has only been slightly degraded at RF frequencies all the way down to 500 kHz. Mass resolution is relatively stable to this point and depending on the resonant ejection point used, the peak intensity is also quite stable. To date only masses up to m/z 200 have been fully investigated, however, additional studies are planned to verify the performance with higher mass ions. The lower frequency and voltage should reduce the pseudo potential well depth, eventually affecting the trapping efficiency of the instrument -- effect that could manifest itself in significantly limiting the mass range of trapped ions. Other methods to reduce the RF power while maintaining analytical performance are also under investigation. This includes ion ejection at lower q(sub z) values to access a given mass with a lower RF voltage. The loss of mass resolution at lower q(sub eject) points has been measured and current work is underway to leverage scan speed and the use of non-linear resonances in order to counter this trend. The overall trap performance under this range of operating conditions will be presented with a goal of identifying what trade-offs are acceptable.

Ferroelectric Based High Power Components for L-Band Accelerator Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanareykin, Alex; Jing, Chunguang; Kostin, Roman

2018-01-16

We are developing a new electronic device to control the power in particle accelerators. The key technology is a new nanostructured material developed by Euclid that changes its properties with an applied electric field. Both superconducting and conventional accelerating structures require fast electronic control of the input rf power. A fast controllable phase shifter would allow for example the control of the rf power delivered to multiple accelerating cavities from a single power amplifier. Nonlinear ferroelectric microwave components can control the tuning or the input power coupling for rf cavities. Applying a bias voltage across a nonlinear ferroelectric changes itsmore » permittivity. This effect can be used to cause a phase change of a propagating rf signal or change the resonant frequency of a cavity. The key is the development of a low loss highly tunable ferroelectric material.« less

Langmuir probe measurements in the intense RF field of a helicon discharge

NASA Astrophysics Data System (ADS)

Chen, Francis F.

2012-10-01

Helicon discharges have extensively been studied for over 25 years both because of their intriguing physics and because of their utility in producing high plasma densities for industrial applications. Almost all measurements so far have been made away from the antenna region in the plasma ejected into a chamber where there may be a strong magnetic field (B-field) but where the radiofrequency (RF) field is much weaker than under the antenna. Inside the source region, the RF field distorts the current-voltage (I-V) characteristic of the probe unless it is specially designed with strong RF compensation. For this purpose, a thin probe was designed and used to show the effect of inadequate compensation on electron temperature (Te) measurements. The subtraction of ion current from the I-V curve is essential; and, surprisingly, Langmuir's orbital motion limited theory for ion current can be used well beyond its intended regime.

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

2016-03-01

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits a high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

RF control hardware design for CYCIAE-100 cyclotron

NASA Astrophysics Data System (ADS)

Yin, Zhiguo; Fu, Xiaoliang; Ji, Bin; Zhao, Zhenlu; Zhang, Tianjue; Li, Pengzhan; Wei, Junyi; Xing, Jiansheng; Wang, Chuan

2015-11-01

The Beijing Radioactive Ion-beam Facility project is being constructed by BRIF division of China Institute of Atomic Energy. In this project, a 100 MeV high intensity compact proton cyclotron is built for multiple applications. The first successful beam extraction of CYCIAE-100 cyclotron was done in the middle of 2014. The extracted proton beam energy is 100 MeV and the beam current is more than 20 μA. The RF system of the CYCIAE-100 cyclotron includes two half-wavelength cavities, two 100 kW tetrode amplifiers and power transmission line systems (all above are independent from each other) and two sets of Low Level RF control crates. Each set of LLRF control includes an amplitude control unit, a tuning control unit, a phase control unit, a local Digital Signal Process control unit and an Advanced RISC Machines based EPICS IOC unit. These two identical LLRF control crates share one common reference clock and take advantages of modern digital technologies (e.g. DSP and Direct Digital Synthesizer) to achieve closed loop voltage and phase regulations of the dee-voltage. In the beam commission, the measured dee-voltage stability of RF system is better than 0.1% and phase stability is better than 0.03°. The hardware design of the LLRF system will be reviewed in this paper.

Design of RF MEMS switches without pull-in instability

NASA Astrophysics Data System (ADS)

Proctor, W. Cyrus; Richards, Gregory P.; Shen, Chongyi; Skorczewski, Tyler; Wang, Min; Zhang, Jingyan; Zhong, Peng; Massad, Jordan E.; Smith, Ralph

2010-04-01

Micro-electro-mechanical systems (MEMS) switches for radio-frequency (RF) signals have certain advantages over solid-state switches, such as lower insertion loss, higher isolation, and lower static power dissipation. Mechanical dynamics can be a determining factor for the reliability of RF MEMS. The RF MEMS ohmic switch discussed in this paper consists of a plate suspended over an actuation pad by four double-cantilever springs. Closing the switch with a simple step actuation voltage typically causes the plate to rebound from its electrical contacts. The rebound interrupts the signal continuity and degrades the performance, reliability and durability of the switch. The switching dynamics are complicated by a nonlinear, electrostatic pull-in instability that causes high accelerations. Slow actuation and tailored voltage control signals can mitigate switch bouncing and effects of the pull-in instability; however, slow switching speed and overly-complex input signals can significantly penalize overall system-level performance. Examination of a balanced and optimized alternative switching solution is sought. A step toward one solution is to consider a pull-in-free switch design. In this paper, determine how simple RC-circuit drive signals and particular structural properties influence the mechanical dynamics of an RF MEMS switch designed without a pull-in instability. The approach is to develop a validated modeling capability and subsequently study switch behavior for variable drive signals and switch design parameters. In support of project development, specifiable design parameters and constraints will be provided. Moreover, transient data of RF MEMS switches from laser Doppler velocimetry will be provided for model validation tasks. Analysis showed that a RF MEMS switch could feasibly be designed with a single pulse waveform and no pull-in instability and achieve comparable results to previous waveform designs. The switch design could reliably close in a timely manner, with small contact velocity, usually with little to no rebound even when considering manufacturing variability.

Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

A novel multi-actuation CMOS RF MEMS switch

NASA Astrophysics Data System (ADS)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

FDSOI 28nm performances study for RF energy scavenging

NASA Astrophysics Data System (ADS)

Rochefeuille, E.; Alicalapa, F.; Douyère, A.; Vuong, T. P.

2018-03-01

This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.

E-H mode transition of a high-power inductively coupled plasma torch at atmospheric pressure with a metallic confinement tube

NASA Astrophysics Data System (ADS)

Altenberend, Jochen; Chichignoud, Guy; Delannoy, Yves

2012-08-01

Inductively coupled plasma torches need high ignition voltages for the E-H mode transition and are therefore difficult to operate. In order to reduce the ignition voltage of an RF plasma torch with a metallic confinement tube the E-H mode transition was studied. A Tesla coil was used to create a spark discharge and the E-H mode transition of the plasma was then filmed using a high-speed camera. The electrical potential of the metallic confinement tube was measured using a high-voltage probe. It was found that an arc between the grounded injector and the metallic confinement tube is maintained by the electric field (E-mode). The transition to H-mode occurred at high magnetic fields when the arc formed a loop. The ignition voltage could be reduced by connecting the metallic confinement tube with a capacitor to the RF generator.

Model and particle-in-cell simulation of ion energy distribution in collisionless sheath

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Zhuwen, E-mail: zzwwdxy@gznc.edu.cn; Key Laboratory of Photoelectron Materials Design and Simulation in Guizhou Province, Guiyang 550018; Scientific Research Innovation Team in Plasma and Functional Thin Film Materials in Guizhou Province, Guiyang 550018

2015-06-15

In this paper, we propose a self-consistent theoretical model, which is described by the ion energy distributions (IEDs) in collisionless sheaths, and the analytical results for different combined dc/radio frequency (rf) capacitive coupled plasma discharge cases, including sheath voltage errors analysis, are compared with the results of numerical simulations using a one-dimensional plane-parallel particle-in-cell (PIC) simulation. The IEDs in collisionless sheaths are performed on combination of dc/rf voltage sources electrodes discharge using argon as the process gas. The incident ions on the grounded electrode are separated, according to their different radio frequencies, and dc voltages on a separated electrode, themore » IEDs, and widths of energy in sheath and the plasma sheath thickness are discussed. The IEDs, the IED widths, and sheath voltages by the theoretical model are investigated and show good agreement with PIC simulations.« less

Meter circuit for tuning RF amplifiers

NASA Technical Reports Server (NTRS)

Longthorne, J. E.

1973-01-01

Circuit computes and indicates efficiency of RF amplifier as inputs and other parameters are varied. Voltage drop across internal resistance of ammeter is amplified by operational amplifier and applied to one multiplier input. Other input is obtained through two resistors from positive terminal of power supply.

Voltage controlled oscillator is easily aligned, has low phase noise

NASA Technical Reports Server (NTRS)

Sydnor, R. L.

1965-01-01

Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.

Power supply system for negative ion source at IPR

NASA Astrophysics Data System (ADS)

Gahlaut, Agrajit; Sonara, Jashwant; Parmar, K. G.; Soni, Jignesh; Bandyopadhyay, M.; Singh, Mahendrajit; Bansal, Gourab; Pandya, Kaushal; Chakraborty, Arun

2010-02-01

The first step in the Indian program on negative ion beams is the setting up of Negative ion Experimental Assembly - RF based, where 100 kW of RF power shall be coupled to a plasma source producing plasma of density ~5 × 1012 cm-3, from which ~ 10 A of negative ion beam shall be produced and accelerated to 35 kV, through an electrostatic ion accelerator. The experimental system is modelled similar to the RF based negative ion source, BATMAN presently operating at IPP, Garching, Germany. The mechanical system for Negative Ion Source Assembly is close to the IPP source, remaining systems are designed and procured principally from indigenous sources, keeping the IPP configuration as a base line. High voltage (HV) and low voltage (LV) power supplies are two key constituents of the experimental setup. The HV power supplies for extraction and acceleration are rated for high voltage (~15 to 35kV), and high current (~ 15 to 35A). Other attributes are, fast rate of voltage rise (< 5ms), good regulation (< ±1%), low ripple (< ±2%), isolation (~50kV), low energy content (< 10J) and fast cut-off (< 100μs). The low voltage (LV) supplies required for biasing and providing heating power to the Cesium oven and the plasma grids; have attributes of low ripple, high stability, fast and precise regulation, programmability and remote operation. These power supplies are also equipped with over-voltage, over-current and current limit (CC Mode) protections. Fault diagnostics, to distinguish abnormal rise in currents (breakdown faults) with over-currents is enabled using fast response breakdown and over-current protection scheme. To restrict the fault energy deposited on the ion source, specially designed snubbers are implemented in each (extraction and acceleration) high voltage path to swap the surge energy. Moreover, the monitoring status and control signals from these power supplies are required to be electrically (~ 50kV) isolated from the system. The paper shall present the design basis, topology selection, manufacturing, testing, commissioning, integration and control strategy of these HVPS. A complete power interconnection scheme, which includes all protective devices and measuring devices, low & high voltage power supplies, monitoring and control signals etc. shall also be discussed. The paper also discusses the protocols involved in grounding and shielding, particularly in operating the system in RF environment.

Biological Effects of Nonionizing Electromagnetic Radiation. Volume IV. Number 3.

DTIC Science & Technology

1980-03-01

lines that produce EMR. perimental evidence on human health effects due to electromagnetic field exposures from high-voltage transmission lines is...1311, Mrch YOW that a permissible occupational exposure level to The biologic effects of electromagnetic fields on MW and RF radiation of 500 PW/cm 2...along with the principal physical param- eters of exposure . 6402 REGULATING POSSIBLE HEALTH EFFECTS FROM AC TRANSMISSION LINE ELECTROMAGNETIC FIELDS

Ion acceleration in a helicon source due to the self-bias effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiebold, Matt; Sung, Yung-Ta; Scharer, John E.

2012-05-15

Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p{sub n} < 1 mTorr) expanding argon plasmas in the Madison Helicon eXperiment (MadHeX). The potential gradient leads to ion acceleration greater than that predicted by ambipolar expansion, exceeding E{sub i} Almost-Equal-To 7 kT{sub e} in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a sweptmore » emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V{sub p-p} Greater-Than-Or-Equivalent-To 140V, V{sub p-p}/V{sub p} Almost-Equal-To 150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to 'neutralize' the accelerated ion population, resulting in a zero net time-averaged current through the acceleration region when an insulating upstream boundary condition is enforced. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate.« less

Nonlinear system analysis in bipolar integrated circuits

NASA Astrophysics Data System (ADS)

Fang, T. F.; Whalen, J. J.

1980-01-01

Since analog bipolar integrated circuits (IC's) have become important components in modern communication systems, the study of the Radio Frequency Interference (RFI) effects in bipolar IC amplifiers is an important subject for electromagnetic compatibility (EMC) engineering. The investigation has focused on using the nonlinear circuit analysis program (NCAP) to predict RF demodulation effects in broadband bipolar IC amplifiers. The audio frequency (AF) voltage at the IC amplifier output terminal caused by an amplitude modulated (AM) RF signal at the IC amplifier input terminal was calculated and compared to measured values. Two broadband IC amplifiers were investigated: (1) a cascode circuit using a CA3026 dual differential pair; (2) a unity gain voltage follower circuit using a micro A741 operational amplifier (op amp). Before using NCAP for RFI analysis, the model parameters for each bipolar junction transistor (BJT) in the integrated circuit were determined. Probe measurement techniques, manufacturer's data, and other researcher's data were used to obtain the required NCAP BJT model parameter values. An important contribution included in this effort is a complete set of NCAP BJT model parameters for most of the transistor types used in linear IC's.

High-voltage R-F feedthrough bushing

DOEpatents

Grotz, G.F.

1982-09-03

Described is a multi-element, high voltage radio frequency bushing for transmitting rf energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

High voltage RF feedthrough bushing

DOEpatents

Grotz, Glenn F.

1984-01-01

Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

Rf-assisted current startup in FED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Peng, Y.K.M.; Kammash, T.

1981-01-01

Auxiliary rf heating of electrons before and during the current rise phase in FED is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at approximately 90 GHz is used to create a small volume of high conductivity plasma near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub o/ approximately 0.2-0.4 m) current channel to be established with a relatively low initial loop voltage (<25 V). During the subsequent plasma expansionmore » and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. The physics models used for analyzing the UHR heating and current rise phases are also discussed.« less

IBS and Potential Luminosity Improvement for RHIC Operation Below Transition Energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fedotov,A.

There is a strong interest in low-energy RHIC operations in the single-beam total energy range of 2.5-25 GeV/nucleon [1-3]. Collisions in this energy range, much of which is below nominal RHIC injection energy, will help to answer one of the key questions in the field of QeD about the existence and location of a critical point on the QCD phase diagram [4]. There have been several short test runs during 2006-2008 RHIC operations to evaluate RHIC operational challenges at these low energies [5]. Beam lifetimes observed during the test runs were limited by machine nonlinearities. This performance limit can bemore » improved with sufficient machine tuning. The next luminosity limitation comes from transverse and longitudinal Intra-beam Scattering (IBS), and ultimately from the space-charge limit. Detailed discussion of limiting beam dynamics effects and possible luminosity improvement with electron cooling can be found in Refs. [6-8]. For low-energy RHIC operation, particle losses from the RF bucket are of particular concern since the longitudinal beam size is comparable to the existing RF bucket at low energies. However, operation below transition energy allows us to exploit an Intra-beam Scattering (IBS) feature that drives the transverse and longitudinal beam temperatures towards equilibrium by minimizing the longitudinal diffusion rate using a high RF voltage. Simulation studies were performed with the goal to understand whether one can use this feature of IBS to improve luminosity of RHIC collider at low-energies. This Note presents results of simulations which show that additional luminosity improvement for low-energy RHIC project may be possible with high RF voltage from a 56 MHz superconducting RF cavity that is presently under development for RHIC.« less

RF Simulation of the 187 MHz CW Photo-RF Gun Cavity at LBNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Tong-Ming

2008-12-01

A 187 MHz normal conducting Photo-RF gun cavity is designed for the next generation light sources. The cavity is capable of operating in CW mode. As high as 750 kV gap voltage can be achieved with a 20 MV/m acceleration gradient. The original cavity optimization is conducted using Superfish code (2D) by Staples. 104 vacuum pumping slots are added and evenly spaced over the cavity equator in order to achieve better than 10 -10-Tor of vacuum. Two loop couplers will be used to feed RF power into the cavity. 3D simulations are necessary to study effects from the vacuum pumpingmore » slots, couplers and possible multipactoring. The cavity geometry is optimized to minimize the power density and avoid multipactoring at operating field level. The vacuum slot dimensions are carefully chosen in consideration of both the vacuum conduction, local power density enhancement and the power attenuation at the getter pumps. This technical note gives a summary of 3D RF simulation results, multipactoring simulations (2D) and preliminary electromagnetic-thermal analysis using ANSYS code.« less

Optimization of direct current-enhanced radiofrequency ablation: an ex vivo study.

PubMed

Tanaka, Toshihiro; Isfort, Peter; Bruners, Philipp; Penzkofer, Tobias; Kichikawa, Kimihiko; Schmitz-Rode, Thomas; Mahnken, Andreas H

2010-10-01

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, and mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 +/- 3.9 vs. 26.5 +/- 4.0 ml), but ablation duration was significantly decreased (296 +/- 85 s vs. 423 +/- 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.

Optimization of Direct Current-Enhanced Radiofrequency Ablation: An Ex Vivo Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Toshihiro, E-mail: toshihir@bf6.so-net.ne.jp; Isfort, Peter; Bruners, Philipp

2010-10-15

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, andmore » mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 {+-} 3.9 vs. 26.5 {+-} 4.0 ml), but ablation duration was significantly decreased (296 {+-} 85 s vs. 423 {+-} 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.« less

Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

NASA Astrophysics Data System (ADS)

Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

2018-01-01

The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

Estimates of RF-induced erosion at antenna-connected beryllium plasma-facing components in JET

DOE PAGES

Klepper, C. C.; Borodin, D.; Groth, M.; ...

2016-01-18

Radio-frequency (RF)-enhanced surface erosion of beryllium (Be) plasma-facing components is explored, for the first time, using the ERO code. We applied the code in order to measure the RF-enhanced edge Be line emission at JET Be outboard limiters, in the presence of high-power, ion cyclotronresonance heating (ICRH) in L-mode discharges. In this first modelling study, the RF sheath effect from an ICRH antenna on a magnetically connected, limiter region is simulated by adding a constant potential to the local sheath, in an attempt to match measured increases in local Be I and Be II emission of factors of 2 3.more » It was found that such increases are readily simulated with added potentials in the range of 100 200 V, which is compatible with expected values for potentials arising from rectification of sheath voltage oscillations from ICRH antennas in the scrape-off layer plasma. We also estimated absolute erosion values within the uncertainties in local plasma conditions.« less

Investigation of the flatband voltage (V(FB)) shift of Al2O3 on N2 plasma treated Si substrate.

PubMed

Kim, Hyungchul; Lee, Jaesang; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2013-09-01

The relationships between the physical and electrical characteristics of films treated with N2 plasma followed by forming gas annealing (FGA) were investigated. The Si substrates were treated with various radio frequency (RF) power levels under a N2 ambient. Al2O3 films were then deposited on Si substrates via remote plasma atomic-layer deposition. The plasma characteristics, such as the radical and ion density, were investigated using optical emission spectroscopy. Through X-ray photoelectron spectroscopy, the chemical-bonding configurations of the samples treated with N2 plasma and FGA were examined. The quantity of Si-N bonds increased as the RF power was increased, and Si--O--N bonds were generated after FGA. The flatband voltage (VFB) was shifted in the negative direction with increasing RF power, but the VFB values of the samples after FGA shifted in the positive direction due to the formation of Si--O--N bonds. N2 plasma treatment with various RF power levels slightly increased the leakage current due to the generation of defect sites.

FinFET and UTBB for RF SOI communication systems

NASA Astrophysics Data System (ADS)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

PubMed Central

Mustafa, Farahiyah; Hashim, Abdul Manaf

2014-01-01

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. PMID:24561400

The phototron: A light to RF energy conversion device

NASA Technical Reports Server (NTRS)

Freeman, J. W.; Simons, S.

1982-01-01

The phototron, a photoelectric device that converts light to radio frequency energy, is described. It is a vacuum tube, free electron, device that is mechanically similar to a reflex klystron with the hot filament cathode replaced by a large area photocathode. The device can operate either with an external voltage source used to accelerate the photoelectrons or with zero bias voltage; in which case the photokinetic energy of the electrons sustains the R.F. oscillations in the tuned R.F. circuit. One basic design of the phototron was tested. Frequencies as high as about 1 GHz and an overall efficiency of about 1% in the biased mode were obtained. In the unbiased mode, the frequencies of operation and efficiences are considerably lower. Success with test model suggests that considerable improvements are possible through design refinements. One such design refinement is the reduction of the length of the electron flight path.

Discontinuous model with semi analytical sheath interface for radio frequency plasma

NASA Astrophysics Data System (ADS)

Miyashita, Masaru

2016-09-01

Sumitomo Heavy Industries, Ltd. provide many products utilizing plasma. In this study, we focus on the Radio Frequency (RF) plasma source by interior antenna. The plasma source is expected to be high density and low metal contamination. However, the sputtering the antenna cover by high energy ion from sheath voltage still have been problematic. We have developed the new model which can calculate sheath voltage wave form in the RF plasma source for realistic calculation time. This model is discontinuous that electronic fluid equation in plasma connect to usual passion equation in antenna cover and chamber with semi analytical sheath interface. We estimate the sputtering distribution based on calculated sheath voltage waveform by this model, sputtering yield and ion energy distribution function (IEDF) model. The estimated sputtering distribution reproduce the tendency of experimental results.

Vacuum tube operation analysis under multi-harmonic driving and heavy beam loading effect in J-PARC RCS

NASA Astrophysics Data System (ADS)

Yamamoto, M.; Nomura, M.; Shimada, T.; Tamura, F.; Hara, K.; Hasegawa, K.; Ohmori, C.; Toda, M.; Yoshii, M.; Schnase, A.

2016-11-01

An rf cavity in the J-PARC RCS not only covers the frequency range of a fundamental acceleration pattern but also generates multi-harmonic rf voltage because it has a broadband impedance. However, analyzing the vacuum tube operation in the case of multi-harmonics is very complicated because many variables must be solved in a self-consistent manner. We developed a method to analyze the vacuum tube operation using a well-known formula and which includes the dependence on anode current for some variables. The calculation method is verified with beam tests, and the results indicate that it is efficient under condition of multi-harmonics with a heavy beam loading effect.

Thermal latency adds to lesion depth after application of high-power short-duration radiofrequency energy: Results of a computer-modeling study.

PubMed

Irastorza, Ramiro M; d'Avila, Andre; Berjano, Enrique

2018-02-01

The use of ultra-short RF pulses could achieve greater lesion depth immediately after the application of the pulse due to thermal latency. A computer model of irrigated-catheter RF ablation was built to study the impact of thermal latency on the lesion depth. The results showed that the shorter the RF pulse duration (keeping energy constant), the greater the lesion depth during the cooling phase. For instance, after a 10-second pulse, lesion depth grew from 2.05 mm at the end of the pulse to 2.39 mm (17%), while after an ultra-short RF pulse of only 1 second the extra growth was 37% (from 2.22 to 3.05 mm). Importantly, short applications resulted in deeper lesions than long applications (3.05 mm vs. 2.39 mm, for 1- and 10-second pulse, respectively). While shortening the pulse duration produced deeper lesions, the associated increase in applied voltage caused overheating in the tissue: temperatures around 100 °C were reached at a depth of 1 mm in the case of 1- and 5-second pulses. However, since the lesion depth increased during the cooling period, lower values of applied voltage could be applied in short durations in order to obtain lesion depths similar to those in longer durations while avoiding overheating. The thermal latency phenomenon seems to be the cause of significantly greater lesion depth after short-duration high-power RF pulses. Balancing the applied total energy when the voltage and duration are changed is not the optimal strategy since short pulses can also cause overheating. © 2017 Wiley Periodicals, Inc.

Robotic assistance and general anaesthesia improve catheter stability and increase signal attenuation during atrial fibrillation ablation.

PubMed

Malcolme-Lawes, Louisa C; Lim, Phang Boon; Koa-Wing, Michael; Whinnett, Zachary I; Jamil-Copley, Shahnaz; Hayat, Sajad; Francis, Darrel P; Kojodjojo, Pipin; Davies, D Wyn; Peters, Nicholas S; Kanagaratnam, Prapa

2013-01-01

Recurrent arrhythmias after ablation procedures are often caused by recovery of ablated tissue. Robotic catheter manipulation systems increase catheter tip stability which improves energy delivery and could produce more transmural lesions. We tested this assertion using bipolar voltage attenuation as a marker of lesion quality comparing robotic and manual circumferential pulmonary vein ablation for atrial fibrillation (AF). Twenty patients were randomly assigned to robotic or manual AF ablation at standard radiofrequency (RF) settings for our institution (30 W 60 s manual, 25 W 30 s robotic, R30). A separate group of 10 consecutive patients underwent robotic ablation at increased RF duration, 25 W for 60 s (R60). Lesions were marked on an electroanatomic map before and after ablation to measure distance moved and change in bipolar electrogram amplitude during RF. A total of 1108 lesions were studied (761 robotic, 347 manual). A correlation was identified between voltage attenuation and catheter movement during RF (Spearman's rho -0.929, P < 0.001). The ablation catheter was more stable during robotic RF; 2.9 ± 2.3 mm (R30) and 2.6 ± 2.2 mm (R60), both significantly less than the manual group (4.3 ± 3.0 mm, P < 0.001). Despite improved stability, there was no difference in signal attenuation between the manual and R30 group. However, there was increased signal attenuation in the R60 group (52.4 ± 19.4%) compared with manual (47.7 ± 25.4%, P = 0.01). When procedures under general anaesthesia (GA) and conscious sedation were analysed separately, the improvement in signal attenuation in the R60 group was only significant in the procedures under GA. Robotically assisted ablation has the capability to deliver greater bipolar voltage attenuation compared with manual ablation with appropriate selection of RF parameters. General anaesthesia confers additional benefits of catheter stability and greater signal attenuation. These findings may have a significant impact on outcomes from AF ablation procedures.

Interaction of ICRF Fields with the Plasma Boundary in AUG and JET and Guidelines for Antenna Optimization

NASA Astrophysics Data System (ADS)

Bobkov, V.; Bilato, R.; Braun, F.; Colas, L.; Dux, R.; Van Eester, D.; Giannone, L.; Goniche, M.; Herrmann, A.; Jacquet, P.; Kallenbach, A.; Krivska, A.; Lerche, E.; Mayoral, M.-L.; Milanesio, D.; Monakhov, I.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Rohde, V.

2009-11-01

W sputtering during ICRF on ASDEX Upgrade (AUG) and temperature rise on JET A2 antenna septa are considered in connection with plasma conditions at the antenna plasma facing components and E‖ near-fields. Large antenna-plasma clearance, high gas puff and low light impurity content are favorable to reduce W sputtering in AUG. The spatial distribution of spectroscopically measured effective W sputtering yields clearly points to the existence of strong E‖ fields at the antenna box ("feeder fields") which dominate over the fields in front of the antenna straps. The picture of E‖ fields, obtained by HFSS code, corroborates the dominant role of E‖ at the antenna box on the formation of sheath-driving RF voltages for AUG. Large antenna-plasma clearance and low gas puff are favorable to reduce septum temperature of JET A2 antennas. Assuming a linear relation between the septum temperature and the sheath driving RF voltage calculated by HFSS, the changes of the temperature with dipole phasing (00ππ, 0ππ0 or 0π0π) are well described by the related changes of the RF voltages. Similarly to the AUG antenna, the strongest E‖ are found at the limiters of the JET A2 antenna for all used dipole phasings and at the septum for the phasings different from 0π0π. A simple general rule can be used to minimize E‖ at the antenna: image currents can be allowed only at the surfaces which do not intersect magnetic field lines at large angles of incidence. Possible antenna modifications generally rely either on a reduction of the image currents, on their short-circuiting by introducing additional conducting surfaces or on imposing the E‖ = 0 boundary condition. On the example of AUG antenna, possible options to minimize the sheath driving voltages are presented.

Filterless frequency 12-tupling optical millimeter-wave generation using two cascaded dual-parallel Mach-Zehnder modulators.

PubMed

Zhu, Zihang; Zhao, Shanghong; Zheng, Wanze; Wang, Wei; Lin, Baoqin

2015-11-10

A novel frequency 12-tupling optical millimeter-wave (mm-wave) generation using two cascaded dual-parallel Mach-Zehnder modulators (DP-MZMs) without an optical filter is proposed and demonstrated by computer simulation. By properly adjusting the amplitude and phase of radio frequency (RF) driving signal and the direct current (DC) bias points of two DP-MZMs, a 120 GHz mm-wave with an optical sideband suppression ratio (OSSR) of 25.1 dB and a radio frequency spurious suppression ratio (RFSSR) of 19.1 dB is shown to be generated from a 10 GHz RF driving signal, which largely reduces the response frequency of electronic devices. Furthermore, it is also proved to be valid that even if the phase difference of RF driving signals, the RF driving voltage, and the DC bias voltage deviate from the ideal values to a certain degree, the performance is still acceptable. Since no optical filter is employed to suppress the undesired optical sidebands, a high-spectral-purity mm-wave signal tunable from 48 to 216 GHz can be obtained theoretically when a RF driving signal from 4 to 18 GHz is applied to the DP-MZMs, and the system can be readily implemented in wavelength-division-multiplexing upconversion systems to provide high-quality optical local oscillator signal.

Electron current extraction from radio frequency excited micro-dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon

Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10-100 {mu}m diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N{sub 2} will bemore » discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.« less

Continuously-Tunable High-Repetition Rate RF-Excited CO2 Waveguide Laser,

DTIC Science & Technology

1982-07-01

may be transformed to the appropriate level at the laser head, which elimi- nates the ueed for the very high voltage power supply . Several gas lasers...Figure 5.5 is shown a picture of the rack containing the 50 W amplifier (at the bottom) the 40 V power - supply (in the middle) and the eight final-stage...experimentally. Experimentally 40.68 MHz rf-excitation of discharges between parallel plate electrodes with up to 7-8 kW peak rf- power hus been investigated

Dipolar DC Collisional Activation in a "Stretched" 3-D Ion Trap: The Effect of Higher Order Fields on rf-Heating

NASA Astrophysics Data System (ADS)

Prentice, Boone M.; McLuckey, Scott A.

2012-04-01

Applying dipolar DC (DDC) to the end-cap electrodes of a 3-D ion trap operated with a bath gas at roughly 1 mTorr gives rise to `rf-heating' and can result in collision-induced dissociation (CID). This approach to ion trap CID differs from the conventional single-frequency resonance excitation approach in that it does not rely on tuning a supplementary frequency to coincide with the fundamental secular frequeny of the precursor ion of interest. Simulations using the program ITSIM 5.0 indicate that application of DDC physically displaces ions solely in the axial (inter end-cap) dimension whereupon ion acceleration occurs via power absorption from the drive rf. Experimental data shows that the degree of rf-heating in a stretched 3-D ion trap is not dependent solely on the ratio of the dipolar DC voltage/radio frequency (rf) amplitude, as a model based on a pure quadrupole field suggests. Rather, ion temperatures are shown to increase as the absolute values of the dipolar DC and rf amplitude both decrease. Simulations indicate that the presence of higher order multi-pole fields underlies this unexpected behavior. These findings have important implications for the use of DDC as a broad-band activation approach in multi-pole traps.

Method and device for ion mobility separations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Garimella, Sandilya V. B.; Smith, Richard D.

2017-07-11

Methods and devices for ion separations or manipulations in gas phase are disclosed. The device includes a single non-planar surface. Arrays of electrodes are coupled to the surface. A combination of RF and DC voltages are applied to the arrays of electrodes to create confining and driving fields that move ions through the device. The DC voltages are static DC voltages or time-dependent DC potentials or waveforms.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

RF power harvesting: a review on designing methodologies and applications

NASA Astrophysics Data System (ADS)

Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

2017-12-01

Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

Ion funnel with extended mass range and reduced conductance limit aperture

DOEpatents

Tolmachev, Aleksey V [Richland, WA; Smith, Richard D [Richland, WA

2008-04-01

An improved ion funnel design is disclosed that decreases the axial RF (parasite) fields at the ion funnel exit. This is achieved by addition of one or more compensation electrodes after the conductance limit electrode. Various RF voltage profiles may be applied to the various electrodes minimizing the parasite axial potential wells. The smallest RF aperture that serves as the conductance limiting electrode is further reduced over standard designs. Overall, the ion funnel improves transmission ranges of both low m/z and high m/z ions, reducing RF activation of ions and decreasing the gas load to subsequent differential pumping stages.

Optimization of the R-SQUID noise thermometer

NASA Astrophysics Data System (ADS)

Seppä, Heikki

1986-02-01

The Josephson junction can be used to convert voltage into frequency and thus it can be used to convert voltage fluctuations generated by Johnson noise in a resistor into frequency fluctuations. As a consequence, the temperature of the resistor can be defined by measuring the variance of the frequency fluctuations. Unfortunately, the absolute determination of temperature by this approach is disturbed by several undesirable effects: a rolloff introduced by the bandwidth of the postdetection filter, additional noise caused by rf amplifiers, and a mixed noise effect caused by the nonlinearity of the Josephson junction together with rf noise in the tank circuit. Furthermore, the variance is a statistical quantity and therefore the limited number of frequency counts produces inaccuracy in a temperature measurement. In this work the total inaccuracy of the noise thermometer is analyzed and the optimal choice of the parameters is derived. A practical way to find the optimal conditions for the Josephson junction noise thermometer is discussed. The inspection shows that under the optimal conditions the total error is dependent only on the temperature under determination, the equivalent noise temperature of the preamplifier, the bias frequency of the SQUID, and the total time used for the measurement.

Ferroelectric Emission Cathodes for Low-Power Electric Propulsion

NASA Technical Reports Server (NTRS)

Kovaleski, Scott D.; Burke, Tom (Technical Monitor)

2002-01-01

Low- or no-flow electron emitters are required for low-power electric thrusters, spacecraft plasma contactors, and electrodynamic tether systems to reduce or eliminate the need for propellant/expellant. Expellant-less neutralizers can improve the viability of very low-power colloid thrusters, field emission electric propulsion devices, ion engines, Hall thrusters, and gridded vacuum arc thrusters. The NASA Glenn Research Center (GRC) is evaluating ferroelectric emission (FEE) cathodes as zero expellant flow rate cathode sources for the applications listed above. At GRC, low voltage (100s to approx. 1500 V) operation of FEE cathodes is examined. Initial experiments, with unipolar, bipolar, and RF burst applied voltage, have produced current pulses 250 to 1000 ns in duration with peak currents of up to 2 A at voltages at or below 1500 V. In particular, FEE cathodes driven by RF burst voltages from 1400 to 2000 V peak to peak, at burst frequencies from 70 to 400 kHz, emitted average current densities from 0.1 to 0.7 A/sq cm. Pulse repeatability as a function of input voltage has been initially established. Reliable emission has been achieved in air background at pressures as high as 10(exp -6) Torr.

Method and apparatus for directing ions and other charged particles generated at near atmospheric pressures into a region under vacuum

DOEpatents

Smith, Richard D.; Shaffer, Scott A.

2000-01-01

A method and apparatus for focusing dispersed charged particles. More specifically, a series of elements within a region maintained at a pressure between 10.sup.-1 millibar and 1 bar, each having successively larger apertures forming an ion funnel, wherein RF voltages are applied to the elements so that the RF voltage on any element has phase, amplitude and frequency necessary to define a confinement zone for charged particles of appropriate charge and mass in the interior of the ion funnel, wherein the confinement zone has an acceptance region and an emmitance region and where the acceptance region area is larger than the emmitance region area.

Avionics electromagnetic interference immunity and environment

NASA Technical Reports Server (NTRS)

Clarke, C. A.

1986-01-01

Aircraft electromagnetic spectrum and radio frequency (RF) field strengths are charted, profiling the higher levels of electromagnetic voltages encountered by the commercial aircraft wiring. Selected military, urban, and rural electromagnetic field levels are plotted and provide a comparison of radiation amplitudes. Low frequency magnetic fields and electric fields from 400 H(Z) power systems are charted versus frequency and wire separation to indicate induced voltages on adjacent or neighboring circuits. Induced EMI levels and attenuation characteristics of electric, magnetic, RF fields, and transients are plotted and graphed for common types of wire circuits. The significance of wire circuit returns and shielding is emphasized to highlight the techniques that help block the paths of electromagnetic interference and maintain avionic interface signal quality.

Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

NASA Astrophysics Data System (ADS)

Wang, Zhao; Knights, Andrew P.

2017-02-01

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Roll type conducting polymer legs for rigid-flexible thermoelectric generator

NASA Astrophysics Data System (ADS)

Park, Teahoon; Lim, Hanwhuy; Hwang, Jong Un; Na, Jongbeom; Lee, Hyunki; Kim, Eunkyoung

2017-07-01

A roll-type conducting polymer film was explored as a flexible organic p-type thermoelectric leg using poly(3,4-ethylenedioxythiophene) (PEDOT) doped with tosylate. The PEDOT films were prepared through solution casting polymerization and rolled up for a roll-type leg. Due to the high flexibility, the roll-type PEDOT leg enabled easy contact to both top and bottom electrodes. Simulation on the dynamic heat transfer and convective cooling for a vertically roosted rod- and roll-type PEDOT leg showed that the temperature difference (ΔT) between the hot and cold sides of the leg was much higher in the roll than that of the rod. The PEDOT legs were integrated with n-type Bi2Te3 blocks, to give a 36-couple rigid-flexible thermoelectric generator (RF-TEG). The maximum output voltage from the 36-couple RF-TEG under a ΔT of 7.9 K was determined as 36.7 mV along with a high output power of 115 nW. A wearable RF-TEG was prepared upon the combination of the 36-couple RF-TEG with an arm warmer, to afford an output voltage of 10.6 mV, which was generated constantly and steadily from human wrist heat.

Improvement of both bandwidth and driving voltage of polymer phase modulators using buried in-plane coupled micro-strip driving electrodes

NASA Astrophysics Data System (ADS)

Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.

2017-06-01

A large performance improvement of polymer phase modulators is reported by using buried in-plane coupled microstrip (CMS) driving electrodes, instead of standard vertical Micro-Strip electrodes. The in-plane CMS driving electrodes have both low radio frequency (RF) losses and high overlap integral between optical and RF waves compared to the vertical designs. Since the optical waveguide and CMS electrodes are located in the same plane, optical injection and microwave driving access cannot be separated perpendicularly without intersection between them. A via-less transition between grounded coplanar waveguide access and CMS driving electrodes is introduced in order to provide broadband excitation of optical phase modulators and avoid the intersection of the optical core and the electrical probe. Simulation and measurement results of the benzocyclobutene polymer as a cladding material and the PMMI-CPO1 polymer as an optical core with an electro-optic coefficient of 70 pm/V demonstrate a broadband operation of 67 GHz using travelling-wave driving electrodes with a half-wave voltage of 4.5 V, while satisfying its low RF losses and high overlap integral between optical and RF waves of in-plane CMS electrodes.

Active stabilization of ion trap radiofrequency potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.

2016-05-15

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

DTIC Science & Technology

1981-07-01

and Berglund (13,5). Pulsed electron flow is induced through the SiO 2 film by rf avalanche in the p-silicon surface depletion layer, and the rf voltage...were then evaporated through a shadow mask from an rf heated crucible in a vacuum chamber under 10 - 6 Torr pressure. Finally, a post-metallization...12.) P. Williams and J.E. Baker, Appl. Phys. Lett. 36, 842 (1980). 13.) H.H. Anderson, Appl. Phys. 18, 131 (1979). 14.) D.R. Young, D.J. DiMaria, W.R

MEMS Gate Structures for Electric Propulsion Applications

DTIC Science & Technology

2006-07-12

distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es...minutes. A hot pressed boron nitride target (4N) in the hexagonal phase (h- BN) was sputtered in a RF magnetron sputtering gun. To promote the nucleation...and nanoFETs. This paper concludes with a discussion on using MEMS gates for dual -grid electron field emission applications. II. Gate Design I I

Rise time analysis of pulsed klystron-modulator for efficiency improvement of linear colliders

NASA Astrophysics Data System (ADS)

Oh, J. S.; Cho, M. H.; Namkung, W.; Chung, K. H.; Shintake, T.; Matsumoto, H.

2000-04-01

In linear accelerators, the periods during the rise and fall of a klystron-modulator pulse cannot be used to generate RF power. Thus, these periods need to be minimized to get high efficiency, especially in large-scale machines. In this paper, we present a simplified and generalized voltage rise time function of a pulsed modulator with a high-power klystron load using the equivalent circuit analysis method. The optimum pulse waveform is generated when this pulsed power system is tuned with a damping factor of ˜0.85. The normalized rise time chart presented in this paper allows one to predict the rise time and pulse shape of the pulsed power system in general. The results can be summarized as follows: The large distributed capacitance in the pulse tank and operating parameters, Vs× Tp , where Vs is load voltage and Tp is the pulse width, are the main factors determining the pulse rise time in the high-power RF system. With an RF pulse compression scheme, up to ±3% ripple of the modulator voltage is allowed without serious loss of compressor efficiency, which allows the modulator efficiency to be improved as well. The wiring inductance should be minimized to get the fastest rise time.

Factors that Influence RF Breakdown in Antenna Systems

NASA Astrophysics Data System (ADS)

Caughman, J. B. O.; Baity, F. W.; Rasmussen, D. A.; Aghazarian, M.; Castano Giraldo, C. H.; Ruzic, David

2007-11-01

One of the main power-limiting factors in antenna systems is the maximum voltage that the antenna or vacuum transmission line can sustain before breaking down. The factors that influence RF breakdown are being studied in a resonant 1/4-wavelength section of vacuum transmission line terminated with an open circuit electrode structure. Breakdown can be initiated via electron emission by high electric fields and by plasma formation in the structure, depending on the gas pressure. Recent experiments have shown that a 1 kG magnetic field can influence plasma formation at pressures as low as 8x10-5 Torr at moderate voltage levels (<5 kV). Ultraviolet light, with energies near the work function of the electrode material, can induce a multipactor discharge and limit power transmission. Details of these experimental results, including the effect of electrode materials (Ni and Cu), will be presented. Oak Ridge National Laboratory is managed by UT-Battelle, LLC, for the U.S. Dept. of Energy under contract DE-AC05-00OR22725. Work supported by USDOE with grant DE-FG02-04ER54765

RF-assisted current startup in FED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S. K.; Peng, Yueng Kay Martin; Kammash, T.

1981-01-01

Auxiliary rf heating of electrons before and during the current rise phase in FED is examined as a means of reducing both the initiation loop voltage and resistive flux expendicture during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at {approx} 90 GHz is used to create a small volume of high conductivity plasma (T{sub e} {approx_equal} 100-200 eV, n{sub e} {approx_equal} 10{sup 13} cm{sup -3}) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a{sub o} {approx_equal} 0.2-0.4 m) current channel to be established with amore » relatively low initial loop voltage (<25 V). During the subsequent plasma expansion and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. The physics models used for analyzing the UHR heating and current rise phases are also discussed.« less

Radio-frequency plasma transducer for use in harsh environments.

PubMed

May, Andrew; Andarawis, Emad

2007-10-01

We describe a compact transducer used to generate and modulate low-intensity radio-frequency atmospheric pressure plasma (RF-APP) for high temperature gap measurement and generation of air-coupled ultrasound. The new transducer consists of a quarter-wave transmission line where the ground return path is a coaxial solenoid winding. The RF-APP is initiated at the open end of the transmission line and stabilized by passive negative feedback between the electrical impedance of the plasma and the energy stored in the solenoid. The electrical impedance of the plasma was measured at the lower-voltage source end of the transducer, eliminating the need to measure kilovolt-level voltages near the discharge. We describe the use of a 7 MHz RF-APP prototype as a harsh-environment clearance sensor to demonstrate the suitability of plasma discharges for a common nondestructive inspection application. Clearance measurements of 0-5 mm were performed on a rotating calibration target with a measurement precision of 0.1 mm and a 20 kHz sampling rate.

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

PubMed Central

Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

PubMed

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

First experiments with the negative ion source NIO1.

PubMed

Cavenago, M; Serianni, G; De Muri, M; Agostinetti, P; Antoni, V; Baltador, C; Barbisan, M; Baseggio, L; Bigi, M; Cervaro, V; Degli Agostini, F; Fagotti, E; Kulevoy, T; Ippolito, N; Laterza, B; Minarello, A; Maniero, M; Pasqualotto, R; Petrenko, S; Poggi, M; Ravarotto, D; Recchia, M; Sartori, E; Sattin, M; Sonato, P; Taccogna, F; Variale, V; Veltri, P; Zaniol, B; Zanotto, L; Zucchetti, S

2016-02-01

Neutral Beam Injectors (NBIs), which need to be strongly optimized in the perspective of DEMO reactor, request a thorough understanding of the negative ion source used and of the multi-beamlet optics. A relatively compact radio frequency (rf) ion source, named NIO1 (Negative Ion Optimization 1), with 9 beam apertures for a total H(-) current of 130 mA, 60 kV acceleration voltage, was installed at Consorzio RFX, including a high voltage deck and an X-ray shield, to provide a test bench for source optimizations for activities in support to the ITER NBI test facility. NIO1 status and plasma experiments both with air and with hydrogen as filling gas are described. Transition from a weak plasma to an inductively coupled plasma is clearly evident for the former gas and may be triggered by rising the rf power (over 0.5 kW) at low pressure (equal or below 2 Pa). Transition in hydrogen plasma requires more rf power (over 1.5 kW).

Rf system for the NSLS coherent infrared radiation source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broome, W.; Biscardi, R.; Keane, J.

1995-05-01

The existing NSLS X-ray Lithography Source (XLS Phase I) is being considered for a coherent synchrotron radiation source. The existing 211 MHz warm cavity will be replaced with a 5-cell 2856 MHz superconducting RF cavity, driven by a series of 2 kW klystrons. The RF system will provide a total V{sub RF} of 1.5 MV to produce {sigma}{sub L} = 0.3 mm electron bunches at an energy of 150 MeV. Superconducting technology significantly reduces the required space and power needed to achieve the higher voltage. It is the purpose of this paper to describe the superconducting RF system and cavity,more » power requirements, and cavity design parameters such as input coupling, Quality Factor, and Higher Order Modes.« less

ICRH antenna S-matrix measurements and plasma coupling characterisation at JET

NASA Astrophysics Data System (ADS)

Monakhov, I.; Jacquet, P.; Blackman, T.; Bobkov, V.; Dumortier, P.; Helou, W.; Lerche, E.; Kirov, K.; Milanesio, D.; Maggiora, R.; Noble, C.; Contributors, JET

2018-04-01

The paper is dedicated to the characterisation of multi-strap ICRH antenna coupling to plasma. Relevance of traditional concept of coupling resistance to antennas with mutually coupled straps is revised and the importance of antenna port excitation consistency for application of the concept is highlighted. A method of antenna S-matrix measurement in presence of plasma is discussed allowing deeper insight into the problem of antenna-plasma coupling. The method is based entirely on the RF plant hardware and control facilities available at JET and it involves application of variable phasing between the antenna straps during the RF plant operations at  >100 kW. Unlike traditional techniques relying on low-power (~10 mW) network analysers, the applied antenna voltage amplitudes are relevant to practical conditions of ICRH operations; crucially, they are high enough to minimise possible effects of antenna loading non-linearity due to the RF sheath effects and other phenomena which could affect low-power measurements. The method has been successfully applied at JET to conventional 4-port ICRH antennas energised at frequencies of 33 MHz, 42 MHz and 51 MHz during L-mode plasma discharges while different gas injection modules (GIMs) were used to maintain comparable plasma densities during the pulses. The S-matrix assessment and its subsequent processing yielding ‘global’ antenna coupling resistances in conditions of equalised port maximum voltages allowed consistent description of antenna coupling to plasma at different strap phasing, operational frequencies and applied GIMs. Comprehensive experimental characterisation of mutually coupled antenna straps in presence of plasma also provided a unique opportunity for in-depth verification of TOPICA computer simulations.

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Extremely high frequency RF effects on electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit boardmore » traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.« less

Absolute Spatially- and Temporally-Resolved Optical Emission Measurements of rf Glow Discharges in Argon

PubMed Central

Djurović, S.; Roberts, J. R.; Sobolewski, M. A.; Olthoff, J. K.

1993-01-01

Spatially- and temporally-resolved measurements of optical emission intensities are presented from rf discharges in argon over a wide range of pressures (6.7 to 133 Pa) and applied rf voltages (75 to 200 V). Results of measurements of emission intensities are presented for both an atomic transition (Ar I, 750.4 nm) and an ionic transition (Ar II, 434.8 nm). The absolute scale of these optical emissions has been determined by comparison with the optical emission from a calibrated standard lamp. All measurements were made in a well-defined rf reactor. They provide detailed characterization of local time-resolved plasma conditions suitable for the comparison with results from other experiments and theoretical models. These measurements represent a new level of detail in diagnostic measurements of rf plasmas, and provide insight into the electron transport properties of rf discharges. PMID:28053464

Emission characteristics of 6.78-MHz radio-frequency glow discharge plasma in a pulsed mode

NASA Astrophysics Data System (ADS)

Zhang, Xinyue; Wagatsuma, Kazuaki

2017-07-01

This paper investigated Boltzmann plots for both atomic and ionic emission lines of iron in an argon glow discharge plasma driven by 6.78-MHz radio-frequency (RF) voltage in a pulsed operation, in order to discuss how the excitation/ionization process was affected by the pulsation. For this purpose, a pulse frequency as well as a duty ratio of the pulsed RF voltage was selected as the experimenter parameters. A Grimm-style radiation source was employed at a forward RF power of 70 W and at an argon pressures of 670 Pa. The Boltzmann plot for low-lying excited levels of iron atom was on a linear relationship, which was probably attributed to thermal collisions with ultimate electrons in the negative glow region; in this case, the excitation temperature was obtained in a narrow range of 3300-3400 K, which was hardly affected by the duty ratio as well as the pulse frequency of the pulsed RF glow discharge plasma. This observation suggested that the RF plasma could be supported by a self-stabilized negative glow region, where the kinetic energy distribution of the electrons would be changed to a lesser extent. Additional non-thermal excitation processes, such as a Penning-type collision and a charge-transfer collision, led to deviations (overpopulation) of particular energy levels of iron atom or iron ion from the normal Boltzmann distribution. However, their contributions to the overall excitation/ionization were not altered so greatly, when the pulse frequency or the duty ratio was varied in the pulsed RF glow discharge plasma.

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Chakraborty, Avik; Sarkar, Angsuman

2015-04-01

In this paper, the analog/RF performance of an III-V semiconductor based staggered hetero-tunnel-junction (HETJ) n-type nanowire (NW) tunneling FET (n-TFET) is investigated, for the first time. The device performance figure-of-merits governing the analog/RF performance such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), output resistance (Rout), intrinsic gain and unity-gain cutoff frequency (fT) have been studied. The analog/RF performance parameters is compared between HETJ NW TFET and a homojunction (HJ) NW n-type TFET of similar dimensions. In addition to enhanced ION and subthreshold swing, a significant improvement in the analog/RF performance parameters obtained by the HETJ n-TFET over HJ counterpart for use in analog/mixed signal System-on-Chip (SoC) applications is reported. Moreover, the analog/RF performance parameters of a III-V based staggered HETJ NW TFET is also compared with a heterojunction (HETJ) NW n-type MOSFET having same material as HETJ n-TFET and equal dimension in order to provide a systematic comparison between HETJ-TFET and HETJ-MOSFET for use in analog/mixed-signal applications. The results reveal that HETJ n-TFET provides higher Rout and hence, a higher intrinsic gain, an improved gm/IDS ratio, and reasonable fT at lower values of gate-overdrive voltage as compared to the HETJ NW n-MOSFET.

An adaptable multiple power source for mass spectrometry and other scientific instruments.

PubMed

Lin, T-Y; Anderson, G A; Norheim, R V; Prost, S A; LaMarche, B L; Leach, F E; Auberry, K J; Smith, R D; Koppenaal, D W; Robinson, E W; Paša-Tolić, L

2015-09-01

An Adaptable Multiple Power Source (AMPS) system has been designed and constructed. The AMPS system can provide up to 16 direct current (DC) (±400 V; 5 mA), 4 radio frequency (RF) (two 500 VPP sinusoidal signals each, 0.5-5 MHz) channels, 2 high voltage sources (±6 kV), and one ∼40 W, 250 °C temperature-regulated heater. The system is controlled by a microcontroller, capable of communicating with its front panel or a computer. It can assign not only pre-saved fixed DC and RF signals but also profiled DC voltages. The AMPS system is capable of driving many mass spectrometry components and ancillary devices and can be adapted to other instrumentation/engineering projects.

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Profile Control by Biased Electrodes in Large Diameter RF Produced Pl asma

NASA Astrophysics Data System (ADS)

Shinohara, Shunjiro; Matsuoka, Norikazu; Yoshinaka, Toshiro

1998-10-01

Control of the plasma profile has been carried out, using the voltage biasing method in the large diameter (45 cm) RF (radio frequency) produced plasma in the presence of the uniform magnetic field (less than 1200 G). Under the low filling pressure condition of 0.16 mTorr, changing the biasing voltages to the three individual end plates with concentric circular ring shapes, the radial electron density (about 10^10 cm-3) profile could be changed from the hollow to the peaked one. On the contrary, the nearly flat electron temperature (several eV) profile did not change appreciably. The azimuthal rotation velocity measured by the Mach probe, i.e. directional probe, showed the different radial profiles (but nearly uniform along the axis) depending on the biasing voltage. This velocity became slower with the low magnetic field (less than 200 G) or in the higher pressure regime up to 20 mTorr with the higher electron density. The experimental results by other biasing methods will also be presented.

Spatial Power Combining Amplifier for Ground and Flight Applications

NASA Astrophysics Data System (ADS)

Velazco, J. E.; Taylor, M.

2016-11-01

Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross-sections than comparable klystrons and traveling-wave tube counterparts and thus avoid RF breakdown and thermal issues common to vacuum tubes. We present a basic description of the SPCA mechanism and initial results of an S-band (2.4 GHz) 100-W, 45-dB gain SPCA prototype. We also discuss future X-band (8.4 GHz), Ka-band (32 GHz), and W-band (94 GHz) SPCA designs for both radar and communications applications.

Intermodulation components in the transmitter RF output due to high voltage power supply ripple

NASA Technical Reports Server (NTRS)

Finnegan, E. J.

1977-01-01

The economic feasibility of eliminating the 400-Hz motor-generator sets used to provide power to the high-voltage power supplies of the 20-kW transmitters and replace them with a 60-Hz high-voltage power supply was investigated. The efficiency of a power supply that runs from the 60-Hz line directly would pay for itself in about seven years and could be designed so that the transmitter would meet all the incidental phase and amplitude modulation specifications.

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2010 CFR

2010-10-01

... modulation Maximum rated carrier power Class of amplifier 0.70 Plate 1 kW or less .80 Plate 2.5 kW and over .35 Low level 0.25 kW and over B .65 Low level 0.25 kW and over BC1 .35 Grid 0.25 kW and over 1 All...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the...

Inductive current startup in large tokamaks with expanding minor radius and rf assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.

1984-02-01

Auxiliary rf heating of electrons before and during the current-rise phase of a large tokamak, such as the Fusion Engineering Device (R = 4.8 m, a = 1.3 m, sigma = 1.6, B/sub T/ = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at approx. 90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 19/ m/sup -3/) near themore » upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub 0/ approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to approx. 100 V without rf assist). During the subsequent plasma expansion and current ramp phase, a combination of rf heating (up to 5 MW) and current profile control leads to a substantial savings in volt-seconds by: (1) minimizing the resistive flux consumption; and (2) maintaining the internal flux at or near the flat profile limit.« less

Inductive current startup in large tokamaks with expanding minor radius and RF assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.

1983-01-01

Auxiliary RF heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device, is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at approx.90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 19/m/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sup 0/ approx.< 0.4 m)more » current channel to be established with a relatively low initial loop voltage (approx.< 25 V as opposed to approx.100 V without RF assist). During the subsequent plasma expansion and current ramp phase, additional RF power is introduced to reduce volt-second consumption due to plasma resistance. To study the preheating phase, a near classical particle and energy transport model is developed to estimate the electron heating efficiency in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter.« less

Feasibility of Frequency-Modulated Wireless Transmission for a Multi-Purpose MEMS-Based Accelerometer

PubMed Central

Sabato, Alessandro; Feng, Maria Q.

2014-01-01

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy—especially at very low frequencies—have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline. PMID:25198003

An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

PubMed

Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

2016-06-01

The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works.

Feasibility of frequency-modulated wireless transmission for a multi-purpose MEMS-based accelerometer.

PubMed

Sabato, Alessandro; Feng, Maria Q

2014-09-05

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy--especially at very low frequencies--have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

Ultralow drive voltage silicon traveling-wave modulator.

PubMed

Baehr-Jones, Tom; Ding, Ran; Liu, Yang; Ayazi, Ali; Pinguet, Thierry; Harris, Nicholas C; Streshinsky, Matt; Lee, Poshen; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

2012-05-21

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

Rf-assisted current startup in the Fusion Engineering Device (FED)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Peng, Y.K.M.; Kammash, T.

1982-08-01

Auxiliary rf heating of electrons before and during the current rise phase in the Fusion Engineering Device is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at approx. 90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 13/ cm/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub o/ approx. = 0.2 to 0.4more » m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V). During the subsequent plasma expansion and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. A near classical particle and energy transport model has been developed to estimate the efficiency of electron heating in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter. The ambipolar electric field (E/sub AMB/) enables the plasma to neutralize itself via poloidal E vector/sub AMB/ x B vector drift. This form of effective rotational transform short-circuits the vertical charge separation and improves particle confinement.« less

Design and modeling of a planar probe for power measurements in a capacitive plasma sheath

NASA Astrophysics Data System (ADS)

Gahan, D.; Hopkins, M. B.; Ellingboe, A. R.

2004-09-01

The design and modeling of a planar probe for power measurement in a capacitive RF sheath is described. The probe is to be biased negatively, using a DC power supply, while simultaneously being driven with an RF voltage. A simple model has been developed which describes the voltage, current and impedance from the generator to the probe surface incorporating the transmission line. A conventional method to determine the power through such a probe would be to measure the voltage, current and their phase relationship very close to the probe surface. This can be very difficult to do with much accuracy since the load is almost purely reactive. An alternative method is discussed. The model shows that for certain lengths of transmission line there exists a point on that transmission line where the imaginary impedance goes to zero. If the power is measured at this point where the current and voltage are almost in phase the result should be more accurate. A brief description of the model is given along with some results for its validation. The operation of the power sensor used is also explained.

New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

PubMed Central

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

New analysis and design of a RF rectifier for RFID and implantable devices.

PubMed

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Implementation of a wireless ECG acquisition SoC for IEEE 802.15.4 (ZigBee) applications.

PubMed

Wang, Liang-Hung; Chen, Tsung-Yen; Lin, Kuang-Hao; Fang, Qiang; Lee, Shuenn-Yuh

2015-01-01

This paper presents a wireless biosignal acquisition system-on-a-chip (WBSA-SoC) specialized for electrocardiogram (ECG) monitoring. The proposed system consists of three subsystems, namely, 1) the ECG acquisition node, 2) the protocol for standard IEEE 802.15.4 ZigBee system, and 3) the RF transmitter circuits. The ZigBee protocol is adopted for wireless communication to achieve high integration, applicability, and portability. A fully integrated CMOS RF front end containing a quadrature voltage-controlled oscillator and a 2.4-GHz low-IF (i.e., zero-IF) transmitter is employed to transmit ECG signals through wireless communication. The low-power WBSA-SoC is implemented by the TSMC 0.18-μm standard CMOS process. An ARM-based displayer with FPGA demodulation and an RF receiver with analog-to-digital mixed-mode circuits are constructed as verification platform to demonstrate the wireless ECG acquisition system. Measurement results on the human body show that the proposed SoC can effectively acquire ECG signals.

Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, Svetozar; Upadhyay, Janardan; Vuskovic, Leposava

2017-12-26

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the innermore » wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.« less

Single-crystalline graphene radio-frequency nanoswitches

NASA Astrophysics Data System (ADS)

Li, Peng; Cui, Tianhong

2015-07-01

Growth of monolayer single-crystalline graphene (SCG) using the low-pressure chemical vapor deposition method is reported. Graphene’s superb quality and single-crystalline nature were characterized and verified by Raman microscopy, atomic force microscopy, and carrier mobility measurement. Radio-frequency (RF) nanoelectromechanical switches based on coplanar waveguide double-clamped SCG membrane were achieved, and the superb properties of SCG enable the switches to operate at a pull-in voltage as low as 1 V, with switch time in the nanosecond regime. Owing to their single-crystalline nature, the switches’ lifetime (>5000 times) is much longer than that of polycrystalline graphene ones reported. The RF devices exhibit good isolation (-30 dB at 40 GHz (Ka band)), which can be further improved by SCG’s conductivity variation due to actuation voltage.

Some Notes on Sparks and Ignition of Fuels

NASA Technical Reports Server (NTRS)

Fisher, Franklin A.

2000-01-01

This report compliments a concurrent analysis of the electromagnetic field threat to the fuel system of a transport aircraft. The accompanying effort assessed currents, voltages and power levels that may be induced upon fuel tank wiring from radio transmitters (inside and outside the aircraft). In addition to this, it was also essential to determine how much voltage, current, or power is required to create a fuel-vapor ignition hazard. The widely accepted minimum guideline for aircraft fuel-vapor ignition is the application of a 0.2 millijoule energy level. However, when considering radio frequency (RF) sources, this guideline is seriously inadequate. This report endeavors to bridge the gap between a traditional understanding of electrical breakdown, heating and combustion; and supplement the knowledge with available information regarding aircraft fuel-vapor ignition by RF sources

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Fabrication and deformation behaviour of multilayer Al2O3/Ti/TiO2 nanotube arrays.

PubMed

Baradaran, S; Basirun, W J; Zalnezhad, E; Hamdi, M; Sarhan, Ahmed A D; Alias, Y

2013-04-01

In this study, titanium thin films were deposited on alumina substrates by radio frequency (RF) magnetron sputtering. The mechanical properties of the Ti coatings were evaluated in terms of adhesion strength at various RF powers, temperatures, and substrate bias voltages. The coating conditions of 400W of RF power, 250°C, and a 75V substrate bias voltage produced the strongest coating adhesion, as obtained by the Taguchi optimisation method. TiO2 nanotube arrays were grown as a second layer on the Ti substrates using electrochemical anodisation at a constant potential of 20V and anodisation times of 15min, 45min, and 75min in a NH4F electrolyte solution (75 ethylene glycol: 25 water). The anodised titanium was annealed at 450°C and 650°C in a N2 gas furnace to obtain different phases of titania, anatase and rutile, respectively. The mechanical properties of the anodised layer were investigated by nanoindentation. The results indicate that Young's modulus and hardness increased with annealing temperature to 650°C. Copyright © 2013 Elsevier Ltd. All rights reserved.

Ion velocities in the presheath of electronegative, radio-frequency plasmas measured by low-energy cutoff

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolewski, Mark A.; Wang, Yicheng; Goyette, Amanda

2016-07-11

Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy distributions (IEDs) measured at an electrode depends sensitively on ion velocities upstream, at the presheath/sheath boundary. By measuring this amplitude, the velocities at which ions exit the presheath can be determined and long-standing controversies regarding presheath transport can be resolved. Here, IEDs measured in rf-biased, inductively coupled plasmas in CF{sub 4} gas determined the presheath exit velocities of all significant positive ions: CF{sub 3}{sup +}, CF{sub 2}{sup +}, CF{sup +}, and F{sup +}. At higher bias voltages, we detectedmore » essentially the same velocity for all four ions. For all ions, measured velocities were significantly lower than the Bohm velocity and the electropositive ion sound speed. Neither is an accurate boundary condition for rf sheaths in electronegative gases: under certain low-frequency, high-voltage criteria defined here, either yields large errors in predicted IEDs. These results indicate that many widely used sheath models will need to be revised.« less

Fast shut-down protection system for radio frequency breakdown and multipactor testing.

PubMed

Graves, T P; Hanson, P; Michaelson, J M; Farkas, A D; Hubble, A A

2014-02-01

Radio frequency (RF) breakdown such as multipactor or ionization breakdown is a device-limiting phenomenon for on-orbit spacecraft used for communication, navigation, or other RF payloads. Ground testing is therefore part of the qualification process for all high power components used in these space systems. This paper illustrates a shut-down protection system to be incorporated into multipactor/ionization breakdown ground testing for susceptible RF devices. This 8 channel system allows simultaneous use of different diagnostic classes and different noise floors. With initiation of a breakdown event, diagnostic signals increase above a user-specified level, which then opens an RF switch to eliminate RF power from the high power amplifier. Examples of this system in use are shown for a typical setup, illustrating the reproducibility of breakdown threshold voltages and the lack of multipactor conditioning. This system can also be utilized to prevent excessive damage to RF components in tests with sensitive or flight hardware.

RF extraction issues in the relativistic klystron amplifiers

NASA Astrophysics Data System (ADS)

Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

1994-05-01

Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

RF Coupling into the Fuel Tank of a Large Transport Aircraft from Intentionally Transmitting Peds in the Passenger Cabin

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.; Dudley, Kenneth L.; Scearce, Stephen A.; Ely, Jay J.; Richardson, Robert E.; Hatfield, Michael O.

2000-01-01

An investigation was performed to study the potential for radio frequency (RF) power radiated from Portable Electronic Devices (PEDs) to create an arcing/sparking event within the fuel tank of a large transport aircraft. This paper describes the experimental methods used for measuring RF coupling to the fuel tank and Fuel Quantity Indication System (FQIS) wiring from PED sources located in the passenger cabin. To allow comparison of voltage/current data obtained in a laboratory chamber FQIS installation to an actual aircraft FQIS installation, aircraft fuel tank RF reverberation characteristics were also measured. Results from the measurements, along with a survey of threats from typical intentional transmitting PEDs are presented. The resulting worst-case power coupled onto fuel tank FQIS wiring is derived. The same approach can be applied to measure RF coupling into various other aircraft systems.

RF Noise Generation in High-Pressure Short-Arc DC Xenon Lamps

NASA Astrophysics Data System (ADS)

Minayeva, Olga; Doughty, Douglas

2007-10-01

Continuous direct current xenon arcs will generate RF noise under certain circumstance, which can lead to excessive electro- magnetic interference in systems that use these arcs as light sources. Phenomenological observations are presented for xenon arcs having arc gaps ˜1 mm, cold fill pressures of ˜2.5 MPa, and currents up to 30 amps. Using a loop antenna in the vicinity of an operating lamp, it is observed that as the current to the arc is lowered there is a reproducible threshold at which the RF noise generation begins. This threshold is accompanied by a small abrupt drop in voltage (˜0.2 volts). The RF emission appears in pulses ˜150 nsec wide separated by ˜300 nec - the pulse interval decreases with decreasing current. The properties of the RF emission as a function of arc parameters (such as pressure, arc gap, electrode design) will be discussed and a semi-quantitative model presented.

Compact RF ion source for industrial electrostatic ion accelerator

NASA Astrophysics Data System (ADS)

Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

2016-02-01

Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described.

Compact RF ion source for industrial electrostatic ion accelerator.

PubMed

Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

2016-02-01

Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, Ka-Ngo

1996-01-01

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Design and Vertical Tests of SPS-series Double-Quarter Wave (DQW) Cavity Prototypes for the HL-LHC Crab Cavity System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verdú-Andrés, S.; et al.

Crab crossing is essential for high-luminosity colliders. The High Luminosity Large Hadron Collider (HL-LHC) will equip one of its Interaction Points (IP1) with Double-Quarter Wave (DQW) crab cavities. A DQW cavity is a new generation of deflecting RF cavities that stands out for its compactness and broad frequency separation between fundamental and first high-order modes. The deflecting kick is provided by its fundamental mode. Each HL-LHC DQW cavity shall provide a nominal deflecting voltage of 3.4 MV, although up to 5.0 MV may be required. A Proof-of-Principle (PoP) DQW cavity was limited by quench at 4.6 MV. This paper describesmore » a new, highly optimized cavity, designated DQW SPS-series, which satisfies dimensional, cryogenic, manufacturing and impedance requirements for beam tests at SPS and operation in LHC. Two prototypes of this DQW SPS-series were fabricated by US industry and cold tested after following conventional SRF surface treatment. Both units outperformed the PoP cavity, reaching a deflecting voltage of 5.3-5.9 MV. This voltage - the highest reached by a DQW cavity - is well beyond the nominal voltage of 3.4 MV and may even operate at the ultimate voltage of 5.0MVwith sufficient margin. This paper covers fabrication, surface preparation and cryogenic RF test results and implications.« less

Design, performance, and grounding aspects of the International Thermonuclear Experimental Reactor ion cyclotron range of frequencies antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durodié, F., E-mail: frederic.durodie@rma.ac.be; Dumortier, P.; Vrancken, M.

2014-06-15

ITER's Ion Cyclotron Range of Frequencies (ICRF) system [Lamalle et al., Fusion Eng. Des. 88, 517–520 (2013)] comprises two antenna launchers designed by CYCLE (a consortium of European associations listed in the author affiliations above) on behalf of ITER Organisation (IO), each inserted as a Port Plug (PP) into one of ITER's Vacuum Vessel (VV) ports. Each launcher is an array of 4 toroidal by 6 poloidal RF current straps specified to couple up to 20 MW in total to the plasma in the frequency range of 40 to 55 MHz but limited to a maximum system voltage of 45 kV andmore » limits on RF electric fields depending on their location and direction with respect to, respectively, the torus vacuum and the toroidal magnetic field. A crucial aspect of coupling ICRF power to plasmas is the knowledge of the plasma density profiles in the Scrape-Off Layer (SOL) and the location of the RF current straps with respect to the SOL. The launcher layout and details were optimized and its performance estimated for a worst case SOL provided by the IO. The paper summarizes the estimated performance obtained within the operational parameter space specified by IO. Aspects of the RF grounding of the whole antenna PP to the VV port and the effect of the voids between the PP and the Blanket Shielding Modules (BSM) surrounding the antenna front are discussed. These blanket modules, whose dimensions are of the order of the ICRF wavelengths, together with the clearance gaps between them will constitute a corrugated structure which will interact with the electromagnetic waves launched by ICRF antennas. The conditions in which the grooves constituted by the clearance gaps between the blanket modules can become resonant are studied. Simple analytical models and numerical simulations show that mushroom type structures (with larger gaps at the back than at the front) can bring down the resonance frequencies, which could lead to large voltages in the gaps between the blanket modules and perturb the RF properties of the antenna if they are in the ICRF operating range. The effect on the wave propagation along the wall structure, which is acting as a spatially periodic (toroidally and poloidally) corrugated structure, and hence constitutes a slow wave structure modifying the wall boundary condition, is examined.« less

Center conductor diagnostic for multipactor detection in inaccessible geometries

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.; Hubble, Aimee A.; Clements, Kathryn A.; Graves, Timothy P.

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying VD C/VR F 0 <0.8 , where VRF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting VD C/VR F 0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all—this is the preferred implementation, but biases in the range VD C=0 -10 V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

Cathode-less gridded ion thrusters for small satellites

NASA Astrophysics Data System (ADS)

Aanesland, Ane

2016-10-01

Electric space propulsion is now a mature technology for commercial satellites and space missions that requires thrust in the order of hundreds of mN, and with available electric power in the order of kW. Developing electric propulsion for SmallSats (1 to 500 kg satellites) are challenging due to the small space and limited available electric power (in the worst case close to 10 W). One of the challenges in downscaling ion and Hall thrusters is the need to neutralize the positive ion beam to prevent beam stalling. This neutralization is achieved by feeding electrons into the downstream space. In most cases hollow cathodes are used for this purpose, but they are fragile and difficult to implement, and in particular for small systems they are difficult to downscale, both in size and electron current. We describe here a new alternative ion thruster that can provide thrust and specific impulse suitable for mission control of satellites as small as 3 kg. The originality of our thruster lies in the acceleration principles and propellant handling. Continuous ion acceleration is achieved by biasing a set of grids with Radio Frequency voltages (RF) via a blocking capacitor. Due to the different mobility of ions and electrons, the blocking capacitor charges up and rectifies the RF voltage. Thus, the ions are accelerated by the self-bias DC voltage. Moreover, due to the RF oscillations, the electrons escape the thruster across the grids during brief instants in the RF period ensuring a full space charge neutralization of the positive ion beam. Due to the RF nature of this system, the space charge limited current increases by almost a factor of 2 compared to classical DC biased grids, which translates into a specific thrust two times higher than for a similar DC system. This new thruster is called Neptune and operates with only one RF power supply for plasma generation, ion acceleration and electron neutralization. We will present the downscaling of this thruster to a 3cm diameter unit well adapted for a CubeSat or SmallSat mission. This work was supported by Agence Nationale de la Recherche under contract ANR-11-IDEX-0004-02 (Plas@Par) and by SATT Paris-Saclay.

RF Rectification on LAPD and NSTX: the relationship between rectified currents and potentials

NASA Astrophysics Data System (ADS)

Perkins, R. J.; Carter, T.; Caughman, J. B.; van Compernolle, B.; Gekelman, W.; Hosea, J. C.; Jaworski, M. A.; Kramer, G. J.; Lau, C.; Martin, E. H.; Pribyl, P.; Tripathi, S. K. P.; Vincena, S.

2017-10-01

RF rectification is a sheath phenomenon important in the fusion community for impurity injection, hot spot formation on plasma-facing components, modifications of the scrape-off layer, and as a far-field sink of wave power. The latter is of particular concern for the National Spherical Torus eXperiment (NSTX), where a substantial fraction of the fast-wave power is lost to the divertor along scrape-off layer field lines. To assess the relationship between rectified currents and rectified voltages, detailed experiments have been performed on the Large Plasma Device (LAPD). An electron current is measured flowing out of the antenna and into the limiters, consistent with RF rectification with a higher RF potential at the antenna. The scaling of this current with RF power will be presented. The limiters are also floated to inhibit this DC current; the impact of this change on plasma-potential and wave-field measurements will be shown. Comparison to data from divertor probes in NSTX will be made. These experiments on a flexible mid-sized experiment will provide insight and guidance into the effects of ICRF on the edge plasma in larger fusion experiments. Funded by the DOE OFES (DE-FC02-07ER54918 and DE-AC02-09CH11466), NSF (NSF- PHY 1036140), and the Univ. of California (12-LR- 237124).

SU-F-T-554: Dark Current Effect On CyberKnife Beam Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, H; Chang, A

Purpose: All RF linear accelerators produce dark current to varying degrees when an accelerating voltage and RF input is applied in the absence of electron gun injection. This study is to evaluate how dark current from the linear accelerator of CyberKnife affect the dose in the reference dosimetry. Methods: The G4 CyberKnife system with 6MV photon beam was used in this study. Using the ion chamber and the diode detector, the dose was measured in water with varying time delay between acquiring charges and staring beam-on after applying high-voltage into the linear accelerator. The dose was measured after the timemore » delay with over the range of 0 to 120 seconds in the accelerating high-voltage mode without beam-on, applying 0, 10, 50, 100, and 200 MUs. For the measurements, the collimator of 60 mm was used and the detectors were placed at the depths of 10 cm with the source-to-surface distance of 80 cm. Results: The dark current was constant over time regardless of MU. The dose due to the dark current increased over time linearly with the R-squared value of 0.9983 up to 4.4 cGy for the time 120 seconds. In the dose rate setting of 720 MU/min, the relative dose when applying the accelerating voltage without beam-on was increased over time up to 0.6% but it was less than the leakage radiation resulted from the accelerated head. As the reference dosimetry condition, when 100 MU was delivered after 10 seconds time delay, the relative dose increased by 0.7% but 6.7% for the low MU (10 MU). Conclusion: In the dosimetry using CyberKnife system, the constant dark current affected to the dose. Although the time delay in the accelerating high-voltage mode without beam-on is within 10 seconds, the dose less than 100 cGy can be overestimated more than 1%.« less

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

SIDON: A simulator of radio-frequency networks. Application to WEST ICRF launchers

NASA Astrophysics Data System (ADS)

Helou, Walid; Dumortier, Pierre; Durodié, Frédéric; Goniche, Marc; Hillairet, Julien; Mollard, Patrick; Berger-By, Gilles; Bernard, Jean-Michel; Colas, Laurent; Lombard, Gilles; Maggiora, Riccardo; Magne, Roland; Milanesio, Daniele; Moreau, Didier

2015-12-01

SIDON (SImulator of raDiO-frequency Networks) is an in-house developed Radio-Frequency (RF) network solver that has been implemented to cross-validate the design of WEST ICRF launchers and simulate their impedance matching algorithm while considering all mutual couplings and asymmetries. In this paper, the authors illustrate the theory of SIDON as well as results of its calculations. The authors have built time-varying plasma scenarios (a sequence of launchers front-faces L-mode and H-mode Z-matrices), where at each time step (1 millisecond here), SIDON solves the RF network. At the same time, when activated, the impedance matching algorithm controls the matching elements (vacuum capacitors) and thus their corresponding S-matrices. Typically a 1-second pulse requires around 10 seconds of computational time on a desktop computer. These tasks can be hardly handled by commercial RF software. This innovative work allows identifying strategies for the launchers future operation while insuring the limitations on the currents, voltages and electric fields, matching and Load-Resilience, as well as the required straps voltage amplitude/phase balance. In this paper, a particular attention is paid to the simulation of the launchers behavior when arcs appear at several locations of their circuits using SIDON calculator. This latter work shall confirm or identify strategies for the arc detection using various RF electrical signals. One shall note that the use of such solvers in not limited to ICRF launchers simulations but can be employed, in principle, to any linear or linearized RF problem.

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE PAGES

Kohno, H.; Myra, J. R.

2017-07-24

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohno, H.; Myra, J. R.

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

An EEG (electroencephalogram) recording system with carbon wire electrodes for simultaneous EEG-fMRI (functional magnetic resonance imaging) recording

PubMed Central

Negishi, Michiro; Abildgaard, Mark; Laufer, Ilan; Nixon, Terry; Constable, Robert Todd

2008-01-01

Simultaneous EEG-fMRI (Electroencephalography-functional Magnetic Resonance Imaging) recording provides a means for acquiring high temporal resolution electrophysiological data and high spatial resolution metabolic data of the brain in the same experimental runs. Carbon wire electrodes (not metallic EEG electrodes with carbon wire leads) are suitable for simultaneous EEG-fMRI recording, because they cause less RF (radio-frequency) heating and susceptibility artifacts than metallic electrodes. These characteristics are especially desirable for recording the EEG in high field MRI scanners. Carbon wire electrodes are also comfortable to wear during long recording sessions. However, carbon electrodes have high electrode-electrolyte potentials compared to widely used Ag/AgCl (silver/silver-chloride) electrodes, which may cause slow voltage drifts. This paper introduces a prototype EEG recording system with carbon wire electrodes and a circuit that suppresses the slow voltage drift. The system was tested for the voltage drift, RF heating, susceptibility artifact, and impedance, and was also evaluated in a simultaneous ERP (event-related potential)-fMRI experiment. PMID:18588913

Dual frequency diffuse dielectric barrier discharge in atmospheric-pressure air-like gas mixture for thin film deposition

NASA Astrophysics Data System (ADS)

Liu, Yaoge; Starostin, Serguei; Welzel, Stefan; van de Sanden, M. C. M.; de Vries, Hindrik; Fom Institute-Differ Team; Eindhoven University Of Technology Team; Fujifilm Manufacturing Europe B. v. Team

2016-09-01

A dual frequency (DF) diffuse discharge was obtained in an atmospheric-pressure dielectric barrier discharge reactor in air-like gas mixtures. By adding a radio frequency (RF) voltage to a low frequency (LF) voltage, we aim to increase the plasma power density. In this study, the discussion is mainly focused on the discharge characteristics and the thin film deposition. According to the spatio-temporal emission, the discharge shows a glow-like structure with both LF and DF voltages. By fitting the spectral lines of the second positive system of N2, the gas temperature was estimated which does not obviously increase with the extra RF signal. Moreover, SiO2-like film was deposited from TEOS using the DF power supply. Thin film properties such as surface morphology, microstructure and stoichiometry were analyzed by AFM, FTIR and XPS, respectively. Because of the higher plasma power density, the DF power supply can be an efficient approach to improve the properties and to increase the throughput of the thin film deposition.

Plasma driven neutron/gamma generator

DOEpatents

Leung, Ka-Ngo; Antolak, Arlyn

2015-03-03

An apparatus for the generation of neutron/gamma rays is described including a chamber which defines an ion source, said apparatus including an RF antenna positioned outside of or within the chamber. Positioned within the chamber is a target material. One or more sets of confining magnets are also provided to create a cross B magnetic field directly above the target. To generate neutrons/gamma rays, the appropriate source gas is first introduced into the chamber, the RF antenna energized and a plasma formed. A series of high voltage pulses are then applied to the target. A plasma sheath, which serves as an accelerating gap, is formed upon application of the high voltage pulse to the target. Depending upon the selected combination of source gas and target material, either neutrons or gamma rays are generated, which may be used for cargo inspection, and the like.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, K.N.

1996-09-24

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

NASA Astrophysics Data System (ADS)

Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

2013-11-01

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

A short report on voltage-to-frequency conversion for HISTRAP RF system tuning control loops

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasanul Basher, A.M.

1991-09-01

One of the requirements of the HISTRAP RF accelerating system is that the frequency of the accelerating voltage for the cavity must keep in step with the change in the magnetic field. As the energy of the particle increases, the magnetic field is increased to keep the radius of the particle orbit constant. At the same time, the frequency of the electric field must be changed to insure that it is synchronized with the angular movement of the particle. So we need to generate the frequency of the accelerating voltage in relation to the magnetic field. The frequency generation canmore » be accomplished in two stages. The first stage of frequency generation consists of measuring the magnetic field in terms of voltage which is already developed. The second stage is to convert this voltage into frequency. Final frequency precision can be achieved by deriving a frequency-correcting signal from the beam position. This project is concerned with generating the frequency from the analog voltage. The speed of response required will place very stringent requirements on both hardware and software. Technology is available to carry out this task. A hardware configuration has been established and software has been developed. In the following section, we describe the implementation strategy, the hardware configuration, and the desired specifications. Next, we present the software developed, results obtained, along with capabilities and limitations of the system. Finally, we suggest alternate solutions to overcome some of the limitations toward meeting our goal. In the appendices, we include program listings.« less

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE PAGES

Myra, J. R.

2017-07-07

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Collective Beam Instabilities in the Taiwan Light Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Alex W.

2002-08-12

The storage ring at Taiwan Light Source has experienced a strong collective instability since 1994. Various cures have been attempted to suppress this instability, including the use of damping antenna, tunable rf plungers, different filling patterns, and rf gap voltage modulation. So far these cures have improved the beam intensity, but the operation remains to be limited by the instability. The dominant phenomenon is the longitudinal coupled bunch instability. The major source of longitudinal impedance is from rf cavities of Doris type. The high-order modes of the cavity were numerically analyzed using a 3-D code GdfidL. The correlation of themore » observed phenomenon in user operation with high-order modes of rf cavities will be presented. Results of various attempts to suppress beam instabilities will be summarized. Proposed cures for beam instabilities will be discussed.« less

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myra, J. R.

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Electron series resonance in a magnetized 13.56 MHz symmetric capacitive coupled discharge

NASA Astrophysics Data System (ADS)

Joshi, J. K.; Binwal, S.; Karkari, S. K.; Kumar, Sunil

2018-03-01

A 13.56 MHz capacitive coupled radio-frequency (RF) argon discharge under transverse magnetic field has been investigated. The discharge is operated in a push-pull mode using a 1:1 isolation transformer with its centre tap grounded to a RF generator. The power delivered to the plasma has been calculated from phase-calibrated RF current/voltage waveforms measured on the secondary side of the isolation transformer. An equivalent electrical circuit of the discharge has been described to determine the net plasma impedance. It is found that in the presence of magnetic field, the discharge impedance exhibits a series resonance as the RF power level is increased gradually. However, in the un-magnetized case, the discharge remains entirely capacitive. A qualitative discussion has been given to explain the role of external magnetic field in achieving the series resonance.

Diplexer switch

NASA Technical Reports Server (NTRS)

Grauling, C. H., Jr.; Parker, T. W.

1977-01-01

Switch achieves high isolation and continuous input/output matching by using resonant coupling structure of diplexer. Additionally, dc bias network used to control switch is decoupled from RF input and output lines. Voltage transients in external circuits are thus minimized.

Evaluation of a microwave high-power reception-conversion array for wireless power transmission

NASA Technical Reports Server (NTRS)

Dickinson, R. M.

1975-01-01

Initial performance tests of a 24-sq m area array of rectenna elements are presented. The array is used as the receiving portion of a wireless microwave power transmission engineering verification test system. The transmitting antenna was located at a range of 1.54 km. Output dc voltage and power, input RF power, efficiency, and operating temperatures were obtained for a variety of dc load and RF incident power levels at 2388 MHz. Incident peak RF intensities of up to 170 mW/sq cm yielded up to 30.4 kW of dc output power. The highest derived collection-conversion efficiency of the array was greater than 80 percent.

Pulsed laser illumination of photovoltaic cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland A.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic receivers to provide remote power. Both the radio-frequency (RF) and induction FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL format.

Pulsed laser illumination of photovoltaic cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland A.; Jenkins, Phillip P.; Landis, Geoffrey A.

1994-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic array receivers to provide remote power. Both the radio-frequency (RF) and induction FEL provide FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL pulse format.

Generation of X-rays and neutrons with a RF-discharge

NASA Technical Reports Server (NTRS)

Schneider, R. T.

1982-01-01

An experimental study concerning disk shaped plasma structures was performed. Such disk-shaped structures can be obtained using an rf discharge in hydrogen. The applied frequency was 1-2 Mhz. In case of operation in deuterium it was found that the discharge emits neutrons and X-rays, although the applied voltage is only 2 kV. This phenomenon was explained by assuming formation of plasma cavitons which are surrounded by high electric fields. The condition for formation of these cavitons is that the applied rf frequency is equal to the plasma frequency. The ions trapped in these resonance structures acquire sufficient energy that they can undergo fusion reactions with the ions in the surrounding gas.

Scaling laws for AC gas breakdown and implications for universality

NASA Astrophysics Data System (ADS)

Loveless, Amanda M.; Garner, Allen L.

2017-10-01

The reduced dependence on secondary electron emission and electrode surface properties makes radiofrequency (RF) and microwave (MW) plasmas advantageous over direct current (DC) plasmas for various applications, such as microthrusters. Theoretical models relating molecular constants to alternating current (AC) breakdown often fail due to incomplete understanding of both the constants and the mechanisms involved. This work derives simple analytic expressions for RF and MW breakdown, demonstrating the transition between these regimes at their high and low frequency limits, respectively. We further show that the limiting expressions for DC, RF, and MW breakdown voltage all have the same universal scaling dependence on pressure and gap distance at high pressure, agreeing with experiment.

Characteristics of radio-frequency atmospheric pressure dielectric-barrier discharge with dielectric electrodes

NASA Astrophysics Data System (ADS)

Hussain, S.; Qazi, H. I. A.; Badar, M. A.

2014-03-01

An experimental investigation to characterize the properties and highlight the benefits of atmospheric pressure radio-frequency dielectric-barrier discharge (rf DBD) with dielectric electrodes fabricated by anodizing aluminium substrate is presented. The current-voltage characteristics and millisecond images are used to distinguish the α and γ modes. This atmospheric rf DBD is observed to retain the discharge volume without constriction in γ mode. Optical emission spectroscopy demonstrates that the large discharge current leads to more abundant reactive species in this plasma source.

The Role of Adaptive Photorefractive Power Limiting on Acousto-Optic Radio Frequency (RF) Signal Excision

DTIC Science & Technology

2001-12-01

using TeO2 , A-O cell, slow acoustic wave). Beam deflection is a continuous function of the input voltage power spectrum; however, the spot width...than for isotropic crystals. Thus, anisotropic, A-O materials, such as TeO2 , have advantages for high RF bandwidth; slow acoustic speeds give better...112 Unfortunately, signal resolution worsened because the new TeO2 crystal was designed to operate in the longitudinal acoustic mode, ua = 5.5 Km

System integration of RF based negative ion experimental facility at IPR

NASA Astrophysics Data System (ADS)

Bansal, G.; Bandyopadhyay, M.; Singh, M. J.; Gahlaut, A.; Soni, J.; Pandya, K.; Parmar, K. G.; Sonara, J.; Chakraborty, A.

2010-02-01

The setting up of RF based negative ion experimental facility shall witness the beginning of experiments on the negative ion source fusion applications in India. A 1 MHz RF generator shall launch 100 kW RF power into a single driver on the plasma source to produce a plasma of density ~5 × 1012 cm-3. The source can deliver a negative ion beam of ~10 A with a current density of ~30 mA/cm2 and accelerated to 35 kV through an electrostatic ion accelerator. The experimental system is similar to a RF based negative ion source, BATMAN, presently operating at IPP. The subsystems for source operation are designed and procured principally from indigenous resources, keeping the IPP configuration as a base line. The operation of negative ion source is supported by many subsystems e.g. vacuum pumping system with gate valves, cooling water system, gas feed system, cesium delivery system, RF generator, high voltage power supplies, data acquisition and control system, and different diagnostics. The first experiments of negative ion source are expected to start at IPR from the middle of 2009.

Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

PubMed Central

Kim, Jong-Wan; Takao, Hidekuni; Sawada, Kazuaki; Ishida, Makoto

2007-01-01

This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kant, Deepender, E-mail: dkc@ceeri.ernet.in; Joshi, L. M.; Janyani, Vijay

The klystron is a well-known microwave amplifier which uses kinetic energy of an electron beam for amplification of the RF signal. There are some limitations of conventional single beam klystron such as high operating voltage, low efficiency and bulky size at higher power levels, which are very effectively handled in Multi Beam Klystron (MBK) that uses multiple low purveyance electron beams for RF interaction. Each beam propagates along its individual transit path through a resonant cavity structure. Multi-Beam klystron cavity design is a critical task due to asymmetric cavity structure and can be simulated by 3D code only. The presentmore » paper shall discuss the design of multi beam RF cavities for klystrons operating at 2856 MHz (S-band) and 5 GHz (C-band) respectively. The design approach uses some scaling laws for finding the electron beam parameters of the multi beam device from their single beam counter parts. The scaled beam parameters are then used for finding the design parameters of the multi beam cavities. Design of the desired multi beam cavity can be optimized through iterative simulations in CST Microwave Studio.« less

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

Atmospheric-pressure diffuse dielectric barrier discharges in Ar/O2 gas mixture using 200 kHz/13.56 MHz dual frequency excitation

NASA Astrophysics Data System (ADS)

Liu, Y.; Starostin, S. A.; Peeters, F. J. J.; van de Sanden, M. C. M.; de Vries, H. W.

2018-03-01

Atmospheric-pressure diffuse dielectric barrier discharges (DBDs) were obtained in Ar/O2 gas mixture using dual-frequency (DF) excitation at 200 kHz low frequency (LF) and 13.56 MHz radio frequency (RF). The excitation dynamics and the plasma generation mechanism were studied by means of electrical characterization and phase resolved optical emission spectroscopy (PROES). The DF excitation results in a time-varying electric field which is determined by the total LF and RF gas voltage and the spatial ion distribution which only responds to the LF component. By tuning the amplitude ratio of the superimposed LF and RF signals, the effect of each frequency component on the DF discharge mechanism was analysed. The LF excitation results in a transient plasma with the formation of an electrode sheath and therefore a pronounced excitation near the substrate. The RF oscillation allows the electron trapping in the gas gap and helps to improve the plasma uniformity by contributing to the pre-ionization and by controlling the discharge development. The possibility of temporally modifying the electric field and thus the plasma generation mechanism in the DF discharge exhibits potential applications in plasma-assisted surface processing and plasma-assisted gas phase chemical conversion.

Review of ion energy and angular distributions in capacitively coupled RF plasma reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawamura, E.; Lieberman, M.A.; Birdsall, C.K.

1995-12-31

The authors present a historical review and discussion of previous works on ion energy and angular distributions (IED and IAD) arriving at the target in the collisionless regime. This regime is of great interest to experimentalists and modelers studying the new generation of high density sources in which the sheath is much thinner than in the conventional RIE systems. The purpose of the review is to asses what has been done so far, and to clarify some issues about sheaths in high density systems. Having determined the important parameters, the authors show some particle-in-cell simulation results of a dually excitedmore » capacitively coupled plasma in which the sheath ions roughly see the scaling as in high density sources. The results show that when {tau}{sub ion}/{tau}{sub rf} < 1, the oscillating voltage and width of the rf sheath significantly affect the IEDs, where {tau}{sub ion} is the ion transit-time and {tau}{sub rf} is rf period.« less

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.

PubMed

Mercante, Andrew J; Shi, Shouyuan; Yao, Peng; Xie, Linli; Weikle, Robert M; Prather, Dennis W

2018-05-28

We present a thin film crystal ion sliced (CIS) LiNbO 3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm -1 . The design, fabrication, and characterization of our broadband modulator is presented in this work.

Manufacture of radio frequency micromachined switches with annealing.

PubMed

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of Radio Frequency Micromachined Switches with Annealing

PubMed Central

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. PMID:24445415

False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

NASA Astrophysics Data System (ADS)

Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

2013-04-01

Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

Progress Toward a Gigawatt-Class Annular Beam Klystron with a Thermionic Electron Gun

NASA Astrophysics Data System (ADS)

Fazio, M.; Carlsten, B.; Farnham, J.; Habiger, K.; Haynes, W.; Myers, J.; Nelson, E.; Smith, J.; Arfin, B.; Haase, A.

2002-08-01

In an effort to reach the gigawatt power level in the microsecond pulse length regime Los Alamos, in collaboration with SLAC, is developing an annular beam klystron (ABK) with a thermionic electron gun. We hope to address the causes of pulse shortening in very high peak power tubes by building a "hard-vacuum" tube in the 10-10 Torr range with a thermionic electron gun producing a constant impedance electron-beam. The ABK has been designed to operate at 5 Hz pulse repetition frequency to allow for RF conditioning. The electron gun has a magnetron injection gun configuration and uses a dispenser cathode running at 1100 degC to produce a 4 kA electron beam at 800 kV. The cathode is designed to run in the temperature-limited mode to help maintain beam stability in the gun. The beam-stick consisting of the electron gun, an input cavity, an idler cavity, and drift tube, and the collector has been designed collaboratively, fabricated at SLAC, then shipped to Los Alamos for testing. On the test stand at Los Alamos a low voltage emission test was performed, but unfortunately as we prepared for high voltage testing a problem with the cathode heater was encountered that prevented the cathode from reaching a high enough temperature for electron emission. A post-mortem examination will be done shortly to determine the exact cause of the heater failure. The RF design has been proceeding and is almost complete. The output cavity presents a challenging design problem in trying to efficiently extract energy from the low impedance beam while maintaining a gap voltage low enough to avoid breakdown and a Q high enough to maintain mode purity. In the next iteration, the ABK will have a new cathode assembly installed along with the remainder of the RF circuit. This paper will discuss the electron gun and the design of the RF circuit along with a report on the status of the work.

Gate voltage dependent 1/f noise variance model based on physical noise generation mechanisms in n-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Arai, Yukiko; Aoki, Hitoshi; Abe, Fumitaka; Todoroki, Shunichiro; Khatami, Ramin; Kazumi, Masaki; Totsuka, Takuya; Wang, Taifeng; Kobayashi, Haruo

2015-04-01

1/f noise is one of the most important characteristics for designing analog/RF circuits including operational amplifiers and oscillators. We have analyzed and developed a novel 1/f noise model in the strong inversion, saturation, and sub-threshold regions based on SPICE2 type model used in any public metal-oxide-semiconductor field-effect transistor (MOSFET) models developed by the University of California, Berkeley. Our model contains two noise generation mechanisms that are mobility and interface trap number fluctuations. Noise variability dependent on gate voltage is also newly implemented in our model. The proposed model has been implemented in BSIM4 model of a SPICE3 compatible circuit simulator. Parameters of the proposed model are extracted with 1/f noise measurements for simulation verifications. The simulation results show excellent agreements between measurement and simulations.

Determination of plasma density from data on the ion current to cylindrical and planar probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voloshin, D. G., E-mail: dvoloshin@mics.msu.su; Vasil’eva, A. N.; Kovalev, A. S.

2016-12-15

To improve probe methods of plasma diagnostics, special probe measurements were performed and numerical models describing ion transport to a probe with allowance for collisions were developed. The current–voltage characteristics of cylindrical and planar probes were measured in an RF capacitive discharge in argon at a frequency of 81 MHz and plasma densities of 10{sup 10}–10{sup 11} cm{sup –3}, typical of modern RF reactors. 1D and 2D numerical models based on the particle-in-cell method with Monte Carlo collisions for simulating ion motion and the Boltzmann equilibrium for electrons are developed to describe current collection by a probe. The models weremore » used to find the plasma density from the ion part of the current–voltage characteristic, study the effect of ion collisions, and verify simplified approaches to determining the plasma density. A 1D hydrodynamic model of the ion current to a cylindrical probe with allowance for ion collisions is proposed. For a planar probe, a method to determine the plasma density from the averaged numerical results is developed. A comparative analysis of different approaches to calculating the plasma density from the ion current to a probe is performed.« less

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

New Developments on the PSR Instability

NASA Astrophysics Data System (ADS)

Macek, Robert

2000-04-01

A strong, fast, transverse instability has long been observed at the Los Alamos Proton Storage Ring (PSR) where it is a limiting factor on peak intensity. Most of the characteristics and experimental data are consistent with a two-stream instability (e-p) arising from coupled oscillations of the proton beam and an electron cloud. In past operations, where the average intensity was limited by beam losses, the instability was controlled by sufficient rf voltage in the ring. The need for higher beam intensity has motivated new work to better understand and control the instability. Results will be presented from studies of the production and characteristics of the electron cloud at various locations in the ring for both stable and unstable beams and suppression of electron cloud generation by TiN coatings. Studies of additional or alternate controls include application of dual harmonic rf, damping of the instability by higher order multipoles, damping by X,Y coupling from skew quadrupoles and the use of inductive inserts to compensate longitudinal space charge forces. Use of a skew quadrupole, heated inductive inserts and higher rf voltage from a refurbished rf buncher has enabled the PSR to accumulate stable beam intensity up to 9.7 micro-Coulombs (6 E13 protons) per macropulse, a significant increase (60over the previous maximum of 6 micro-Coulombs (3.7 E13 protons). However, slow losses were rather high and must be reduced for routine operation at repetition rates of 20 Hz or higher.

Influence of the RF electrode cleanliness on plasma characteristics and dust-particle generation in methane dusty plasmas

NASA Astrophysics Data System (ADS)

Géraud-Grenier, I.; Desdions, W.; Faubert, F.; Mikikian, M.; Massereau-Guilbaud, V.

2018-01-01

The methane decomposition in a planar RF discharge (13.56 MHz) leads both to a dust-particle generation in the plasma bulk and to a coating growth on the electrodes. Growing dust-particles fall onto the grounded electrode when they are too heavy. Thus, at the end of the experiment, the grounded electrode is covered by a coating and by fallen dust-particles. During the dust-particle growth, the negative DC self-bias voltage (VDC) increases because fewer electrons reach the RF electrode, leading to a more resistive plasma and to changes in the plasma chemical composition. In this paper, the cleanliness influence of the RF electrode on the dust-particle growth, on the plasma characteristics and composition is investigated. A cleanliness electrode is an electrode without coating and dust-particles on its surface at the beginning of the experiment.

Effects of detuning of electron beam quality for annular beam Cyclotron Autoresonance Accelerator (CARA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, C.; Hirshfield, J.L.; Ganguly, K.

1995-04-01

For high frequency gyrotrons or high gyroharmonic conversion, an axis encircling beam of high voltage is required to allow coupling to whispering gallery fields near the walls. Lower voltage is required for an annular beam of similar velocity ratio {alpha}. Here the authors present simulation results using a modified CARA for preparation of a 320 kV, 20 A, {alpha} = 1.5 annular beam driven at 11.424 GHz with an rf power of 5 MW and an injection voltage of 75 kV. It is shown that the beam quality can be considerably improved by so-called {open_quotes}detuning{close_quotes}, where the tapered axial magneticmore » field profiles in the CARA are caused to deviate a small amount from exact resonance. Under typical operating conditions, beams with axial velocity spreads of the order of 1% are predicted. This approach could be used to provide a high quality annular gyrating beam for multi-megawatt millimeter wave sources in the 100-200 GHz range.« less

Modeling the effects of biological tissue on RF propagation from a wrist-worn device.

PubMed

Wilson, Jared D; Blanco, Justin A; Mazar, Scott; Bly, Mark

2014-01-01

Many wireless devices in common use today are worn either on or in close proximity to the body. Among them are a growing number of wrist-mounted devices designed for applications such as activity or vital-signs monitoring, typically using Bluetooth technology to communicate with external devices. Here, we use a tissue-mimicking phantom material in conjunction with anechoic chamber and network analyzer testing to investigate how antenna propagation patterns in one such device are influenced by the electrical properties of the human wrist. A microstrip antenna module is mounted onto phantom material of various geometries, and the resulting voltage standing wave ratio (VSWR), input impedance, and azimuth radiation pattern are recorded in both free space and real-world environments. The results of this study demonstrate how the high permittivity values of human tissue (ε(r) ≈ 16) affect the design parameters of microstrip antennas. A simulation environment using Sonnet EM software was used to further analyze the high dielectric effects of biological tissue on RF propagation.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu; Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil; Sun, Nian X.

2013-11-21

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstratedmore » in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.« less

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Modular compact solid-state modulators for particle accelerators

NASA Astrophysics Data System (ADS)

Zavadtsev, A. A.; Zavadtsev, D. A.; Churanov, D. V.

2017-12-01

The building of the radio frequency (RF) particle accelerator needs high-voltage pulsed modulator as a power supply for klystron or magnetron to feed the RF accelerating system. The development of a number of solid-state modulators for use in linear accelerators has allowed to develop a series of modular IGBT based compact solid-state modulators with different parameters. This series covers a wide range of needs in accelerator technology to feed a wide range of loads from the low power magnetrons to powerful klystrons. Each modulator of the series is built on base of a number of unified solid-state modules connected to the pulse transformer, and covers a wide range of modulators: voltage up to 250 kV, a peak current up to 250 A, average power up to 100 kW and the pulse duration up to 20 μsec. The parameters of the block with an overall dimensions 880×540×250 mm are: voltage 12 kV, peak current 1600 A, pulse duration 20 μsec, average power 10 kW with air-cooling and 40 kW with liquidcooling. These parameters do not represent a physical limit, and modulators to parameters outside these ranges can be created on request.

60-MW test using the 30-MW klystrons for the KEKB project

NASA Astrophysics Data System (ADS)

Fukuda, S.; Michizono, S.; Nakao, K.; Saito, Y.; Anami, S.

1995-07-01

The B-Factory is a future plan, requiring an energy upgrade of the KEK linac from 2.5 GeV to 8.0 GeV (KEKB Project). This paper describes the recent development of an S-band high-power pulse klystron to be used as the PF-linac rf-source of the B-Factory. This tube is a modified version of the existing 30-MW tube, which produces 51 MW at a 310 kV beam voltage by optimizing the focusing magnetic field. In order to increase the reliability, the cathode diameter, the gun housing, and the insulation ceramic-seal were enlarged. This tube was redesigned so as to have the same characteristics as the test results of 30-MW tubes at a higher applied voltage without changing the rf interaction region. Four prototype tubes have been manufactured; final test results showed that these new tubes produce an output power of more than 50 MW at 310 kV with an efficiency of 46%. Recently this tube has produced more than 60 MW at a 350 kV beam voltage for a demonstration test. A comparison between the FCI-code prediction and the test results is also given in this paper.

Booster Synchrotron RF System Upgrade for SPEAR3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Sanghyun; /SLAC; Corbett, Jeff

2012-07-06

Recent progress at the SPEAR3 includes the increase in stored current from 100 mA to 200 mA and top-off injection to allow beamlines to stay open during injection. Presently the booster injects 3.0 GeV beam to SPEAR3 three times a day. The stored beam decays to about 150 mA between the injections. The growing user demands are to increase the stored current to the design value of 500 mA, and to maintain it at a constant value within a percent or so. To achieve this goal the booster must inject once every few minutes. For improved injection efficiency, all RFmore » systems at the linac, booster and SPEAR3 need to be phase-locked. The present booster RF system is basically a copy of the SPEAR2 RF system with 358.5 MHz and 40 kW peak RF power driving a 5-cell RF cavity for 1.0 MV gap voltage. These requirements entail a booster RF system upgrade to a scaled down version of the SPEAR3 RF system of 476.3 MHz with 1.2 MW cw klystron output power capabilities. We will analyze each subsystem option for their merits within budgetary and geometric space constraints. A substantial portion of the system will come from the decommissioned PEP-II RF stations.« less

Insight into RF power requirements and B1 field homogeneity for human MRI via rigorous FDTD approach.

PubMed

Ibrahim, Tamer S; Tang, Lin

2007-06-01

To study the dependence of radiofrequency (RF) power deposition on B(0) field strength for different loads and excitation mechanisms. Studies were performed utilizing a finite difference time domain (FDTD) model that treats the transmit array and the load as a single system. Since it was possible to achieve homogenous excitations across the human head model by varying the amplitudes/phases of the voltages driving the transmit array, studies of the RF power/B(0) field strength (frequency) dependence were achievable under well-defined/fixed/homogenous RF excitation. Analysis illustrating the regime in which the RF power is dependent on the square of the operating frequency is presented. Detailed studies focusing on the RF power requirements as a function of number of excitation ports, driving mechanism, and orientations/positioning within the load are presented. With variable phase/amplitude excitation, as a function of frequency, the peak-then-decrease relation observed in the upper axial slices of brain with quadrature excitation becomes more evident in the lower slices as well. Additionally, homogeneity optimization targeted at minimizing the ratio of maximum/minimum B(1) (+) field intensity within the region of interest, typically results in increased RF power requirements (standard deviation was not considered in this study). Increasing the number of excitation ports, however, can result in significant RF power reduction. (c) 2007 Wiley-Liss, Inc.

Stamp transferred suspended graphene mechanical resonators for radio frequency electrical readout.

PubMed

Song, Xuefeng; Oksanen, Mika; Sillanpää, Mika A; Craighead, H G; Parpia, J M; Hakonen, Pertti J

2012-01-11

We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f = 5-6 GHz producing modulation sidebands at f ± f(m). A mechanical resonance frequency up to f(m) = 178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of dc bias voltage V(dc) indicates that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large V(dc). © 2011 American Chemical Society

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Observation of longitudinal spin-Seebeck effect in cobalt-ferrite epitaxial thin films

NASA Astrophysics Data System (ADS)

Niizeki, Tomohiko; Kikkawa, Takashi; Uchida, Ken-ichi; Oka, Mineto; Suzuki, Kazuya Z.; Yanagihara, Hideto; Kita, Eiji; Saitoh, Eiji

2015-05-01

The longitudinal spin-Seebeck effect (LSSE) has been investigated in cobalt ferrite (CFO), an exceptionally hard magnetic spinel ferrite. A bilayer of a polycrystalline Pt and an epitaxially-strained CFO(110) exhibiting an in-plane uniaxial anisotropy was prepared by reactive rf sputtering technique. Thermally generated spin voltage in the CFO layer was measured via the inverse spin-Hall effect in the Pt layer. External-magnetic-field (H) dependence of the LSSE voltage (VLSSE) in the Pt/CFO(110) sample with H ∥ [001] was found to exhibit a hysteresis loop with a high squareness ratio and high coercivity, while that with H ∥ [ 1 1 ¯ 0 ] shows a nearly closed loop, reflecting the different anisotropies induced by the epitaxial strain. The magnitude of VLSSE has a linear relationship with the temperature difference (ΔT), giving the relatively large VLSSE /ΔT of about 3 μV/K for CFO(110) which was kept even at zero external field.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, J.M.; Clifft, B.E.; Bollinger, L.M.

1995-08-08

A beam current limiter is disclosed for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity. 6 figs.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, John M.; Clifft, Benny E.; Bollinger, Lowell M.

1995-01-01

A beam current limiter for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity.

MEMS-based, RF-driven, compact accelerators

NASA Astrophysics Data System (ADS)

Persaud, A.; Seidl, P. A.; Ji, Q.; Breinyn, I.; Waldron, W. L.; Schenkel, T.; Vinayakumar, K. B.; Ni, D.; Lal, A.

2017-10-01

Shrinking existing accelerators in size can reduce their cost by orders of magnitude. Furthermore, by using radio frequency (RF) technology and accelerating ions in several stages, the applied voltages can be kept low paving the way to new ion beam applications. We make use of the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and have previously shown the implementation of its basic components using printed circuit boards, thereby reducing the size of earlier MEQALACs by an order of magnitude. We now demonstrate the combined integration of these components to form a basic accelerator structure, including an initial beam-matching section. In this presentation, we will discuss the results from the integrated multi-beam ion accelerator and also ion acceleration using RF voltages generated on-board. Furthermore, we will show results from Micro-Electro-Mechanical Systems (MEMS) fabricated focusing wafers, which can shrink the dimension of the system to the sub-mm regime and lead to cheaper fabrication. Based on these proof-of-concept results we outline a scaling path to high beam power for applications in plasma heating in magnetized target fusion and in neutral beam injectors for future Tokamaks. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC02-05CH11231.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Initial experiments with a versatile multi-aperture negative-ion source and related improvements

NASA Astrophysics Data System (ADS)

Cavenago, M.

2016-03-01

A relatively compact ion source, named NIO1 (Negative-Ion Optimization 1), with 9 beam apertures for H- extraction is under commissioning, in collaboration between Consorzio RFX and INFN, to provide a test bench for source optimizations, for innovations, and for simulation code validations in support of Neutral Beam Injectors (NBI) optimization. NIO1 installation includes a 60kV high-voltage deck, power supplies for a 130mA ion nominal current, an X-ray shield, and beam diagnostics. Plasma is heated with a tunable 2MHz radiofrequency (rf) generator. Physical aspects of source operation and rf-plasma coupling are discussed. NIO1 tuning procedures and plasma experiments both with air and with hydrogen as filling gas are described, up to a 1.7kW rf power. Transitions to inductively coupled plasma are reported in the case of air (for a rf power of about 0.5kW and a gas pressure below 2Pa), discussing their robust signature in optical emission, and briefly summarized for hydrogen, where more than 1kW rf power is needed.

Plasma Ion Sources for Atmospheric Pressure Ionization Mass Spectrometry.

NASA Astrophysics Data System (ADS)

Zhao, Jian-Guo

1994-01-01

Atmospheric pressure ionization (API) sources using direct-current (DC) and radio-frequency (RF) plasma have been developed in this thesis work. These ion sources can provide stable discharge currents of ~ 1 mA, 2-3 orders of magnitude larger than that of the corona discharge, a widely used API source. The plasmas can be generated and maintained in 1 atm of various buffer gases by applying -500 to -1000 V (DC plasma) or 1-15 W with a frequency of 165 kHz (RF plasma) on the needle electrode. These ion sources have been used with liquid injection to detect various organic compounds of pharmaceutical, biotechnological and environmental interest. Key features of these ion sources include soft ionization with the protonated molecule as the largest peak, and superb sensitivity with detection limits in the low picogram or femtomole range and a linear dynamic range over ~4 orders of magnitude. The RF plasma has advantages over the DC plasma in its ability to operate in various buffer gases and to produce a more stable plasma. Factors influencing the performance of the ion sources have been studied, including RF power level, liquid flow rate, chamber temperature, solvent composition, and voltage affecting the collision induced dissociation (CID). Ionization of hydrocarbons by the RF plasma API source was also studied. Soft ionization is generally produced. To obtain high sensitivity, the ion source must be very dry and the needle-to-orifice distance must be small. Nitric oxide was used to enhance the sensitivity. The RF plasma source was then used for the analysis of hydrocarbons in auto emissions. Comparisons between the corona discharge and the RF plasma have been made in terms of discharge current, ion residence time, and the ion source model. The RF plasma source provides larger linear dynamic range and higher sensitivity than the corona discharge, due to its much larger discharge current. The RF plasma was also observed to provide longer ion residence times and was not limited by space-charge effect as in the corona source.

Sputter crater formation in the case of microsecond pulsed glow discharge in a Grimm-type source. Comparison of direct current and radio frequency modes

NASA Astrophysics Data System (ADS)

Efimova, Varvara; Hoffmann, Volker; Eckert, Jürgen

2012-10-01

Depth profiling with pulsed glow discharge is a promising technique. The application of pulsed voltage for sputtering reduces the sputtering rate and thermal stress and hereby improves the analysis of thin layered and thermally fragile samples. However pulsed glow discharge is not well studied and this limits its practical use. The current work deals with the questions which usually arise when the pulsed mode is applied: Which duty cycle, frequency and pulse length must be chosen to get the optimal sputtering rate and crater shape? Are the well-known sputtering effects of the continuous mode valid also for the pulsed regime? Is there any difference between dc and rf pulsing in terms of sputtering? It is found that the pulse length is a crucial parameter for the crater shape and thermal effects. Sputtering with pulsed dc and rf modes is found to be similar. The observed sputtering effects at various pulsing parameters helped to interpret and optimize the depth resolution of GD OES depth profiles.

Rf linearity in low dimensional nanowire mosfets

NASA Astrophysics Data System (ADS)

Razavieh, Ali

Ever decreasing cost of electronics due to unique scaling potential of today's VLSI processes such as CMOS technology along with innovations in RF devices, circuits and architectures make wireless communication an un-detachable part of everyday's life. This rapid transition of communication systems toward wireless technologies over last couple of decades resulted in operation of numerous standards within a small frequency window. More traffic in adjacent frequency ranges imposes more constraints on the linearity of RF front-end stages, and increases the need for more effective linearization techniques. Long-established ways to improve linearity in DSM CMOS technology are focused on system level methods which require complex circuit design techniques due to challenges such as nonlinear output conductance, and mobility degradation especially when low supply voltage is a key factor. These constrains have turned more focus toward improvement of linearity at the device level in order to simplify the existing linearization techniques. This dissertation discusses the possibility of employing nanostructures particularly nanowires in order to achieve and improve RF linearity at the device level by making a connection between the electronic transport properties of nanowires and their circuit level RF characteristics (RF linearity). Focus of this work is mainly on transconductance (gm) linearity because of the following reasons: 1) due to good electrostatics, nanowire transistors show fine current saturation at very small supply voltages. Good current saturation minimizes the output conductance nonlinearities. 2) non-linearity due to the gate to source capacitances (Cgs) can also be ignored in today's operating frequencies due to small gate capacitance values. If three criteria: i) operation in the quantum capacitance limit (QCL), ii) one-dimensional (1-D) transport, and iii) operation in the ballistic transport regime are met at the same time, a MOSFET will exhibit an ideal linear Id-Vgs characteristics with a constant gm of which is independent of the choice of channel material when operated under high enough drain voltages. Unique scaling potential of nanowires in terms of body thickness, channel length, and oxide thickness makes nanowire transistors an excellent device structure of choice to operate in 1-D ballistic transport regime in the QCL. A set of guidelines is provided for material parameters and device dimensions for nanowire FETs, which meet the three criteria of i) 1-D transport ii) operation in the QCL iii) ballistic transport, and challenges and limitations of fulfilling any of the above transport conditions from materials point of view are discussed. This work also elaborates how a non-ideal device, one that approaches but does not perfectly fulfill criteria i) through iii), can be analyzed in terms of its linearity performance. In particular the potential of silicon based devices will be discussed in this context, through mixture of experiment and simulation. 1-D transport is successfully achieved in the lab. QCL is simulated through back calculation of the band movement of the transistors in on-state. Quasi-ballistic transport conditions can be achieved by cooling down the samples to 77K. Since, ballistic transport is challenging to achieve for practical channel lengths in today's leading semiconductor device technologies the effect of carrier back-scattering on RF linearity is explored through third order intercept point (IIP3) analysis. These findings show that for the devices which operate in the QCL, while 1-D sub-bands are involved in carrier transport, current linearity is directly related to the nature of the dominant scattering mechanism in the channel, and can be improved by proper choice of channel material in order to enforce a specific scattering mechanism to prevail in the channel. Usually, in semiconductors, the dominant scattering mechanism in the channel is the superposition of different mechanisms. Suitable choice of channel material and bias conditions can magnify the effect of a particular scattering mechanism to achieve higher linearity levels. The closing section of this thesis focuses on InAS due to its potential for high linearity since it has small effective mass and large mean-free-path.

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noda, Akira; Iwashita, Yoshihisa; Souda, Hikaru

A phase rotation scheme of laser-produced ions from a solid target by the application of a synchronized RF electric voltage with a pulsed laser has been experimentally investigated with the use of a 100 TW laser, J-KAREN at JAEA, KPSI. Up to now, energy peaks of up to around 2.0 MeV have been created with a FWHM of 2.6% with good reproducibility using a two-gap resonator of a quarter wave length with the same frequency as the source laser (approx80 MHz). It is also found that the position of the peak can be well controlled by adjusting the relative phasemore » between the RF electric field and the laser, which is very promising for real applications of such laser-produced protons. In order to also apply such a phase rotation system for higher energy protons (<200 MeV), a scheme to use a small linear accelerator (LINAC) with multi-gaps is proposed as a phase rotator. With multi-gap structure, alternating focusing between longitudinal and transverse degrees of freedoms can be realized. From the point of compactness and realizing a small focused spot, however, a scheme combining separate quadrupole magnets just before and after the RF cavity excited with the Wideroee mode, might be more effective. The scheme presented here will realize laser-produced ions (protons) with good reproducibility by combining with RF technology.« less

High intensity single bunch operation with heavy periodic transient beam loading in wide band rf cavities

NASA Astrophysics Data System (ADS)

Tamura, Fumihiko; Hotchi, Hideaki; Schnase, Alexander; Yoshii, Masahito; Yamamoto, Masanobu; Ohmori, Chihiro; Nomura, Masahiro; Toda, Makoto; Shimada, Taihei; Hasegawa, Katsushi; Hara, Keigo

2015-09-01

The rapid cycling synchrotron (RCS) in the Japan Proton Accelerator Research Complex (J-PARC) was originally designed to accelerate two high intensity bunches, while some of neutron experiments in the materials and life science experimental facility and a muon experiment using main ring beams require a single bunch operation mode, in which one of the two rf buckets is filled and the other is empty. The beam intensity in the single bunch operation has been limited by longitudinal beam losses due to the rf bucket distortions by the wake voltage of the odd harmonics (h =1 ,3 ,5 ) in the wide band magnetic alloy cavities. We installed an additional rf feedforward system to compensate the wake voltages of the odd harmonics (h =1 ,3 ,5 ). The additional system has a similar structure as the existing feedforward system for the even harmonics (h =2 ,4 ,6 ). We describe the function of the feedforward system for the odd harmonics, the commissioning methodology, and the commissioning results. The longitudinal beam losses during the single bunch acceleration disappeared with feedforward for the odd harmonics. We also confirmed that the beam quality in the single bunch acceleration are similar to that of the normal operation with two bunches. Thus, high intensity single bunch acceleration at the intensity of 2.3 ×1013 protons per bunch has been achieved in the J-PARC RCS. This article is a follow-up of our previous article, Phys. Rev. ST Accel. Beams 14, 051004 (2011). The feedforward system extension for single bunch operation was successful.

Design of RF energy harvesting platforms for power management unit with start-up circuits

NASA Astrophysics Data System (ADS)

Costanzo, Alessandra; Masotti, Diego

2013-12-01

In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

Experimental results of the 140 GHz, 1 MW long-pulse gyrotron for W7-X

NASA Astrophysics Data System (ADS)

Koppenburg, K.; Arnold, A.; Borie, E.; Dammertz, G.; Giguet, E.; Heidinger, R.; Illy, S.; Kuntze, M.; Le Cloarec, G.; Legrand, F.; Leonhardt, W.; Lievin, C.; Neffe, G.; Piosczyk, B.; Schmid, M.; Thumm, M.

2003-02-01

Gyrotrons at high frequency with high output power are mainly developed for microwave heating and current drive in plasmas for thermonuclear fusion. For the stellarator Wendelstein 7-X now under construction at IPP Greifswald, Germany, a 10 MW ECRH system is foreseen. A 1 MW, 140 GHz long-pulse gyrotron has been designed and a pre-prototype (Maquette) has been constructed and tested in an European collaboration between FZK Karlsruhe, CRPP Lausanne, IPF Suttgart, IPP Greifswald, CEA Cadarache and TED Vélizy [1]. The cylindrical cavity is designed for operating in the TE28,8 mode. It is a standard tapered cavity with linear input downtaper and a non-linear uptaper. The diameter of the cylindrical part is 40.96 mm. The transitions between tapers and straight section are smoothly rounded to avoid mode conversion. The TE28,8-cavity mode is transformed to a Gaussian TEM0,0 output mode by a mode converter consisting of a rippled-wall waveguide launcher followed by a three mirror system. The output window uses a single, edge cooled CVD-diamond disk with an outer diameter of 106 mm, a window aperture of 88 mm and a thickness of 1.8 mm corresponding to four half wavelengths. The collector is at ground potential, and a depression voltage for energy recovery can be applied to the cavity and to the first two mirrors. Additional normal-conducting coils are employed to the collector in order to produce an axial magnetic field for sweeping the electron beam with a frequency of 7 Hz. A temperature limited magnetron injection gun without intermediate anode ( diode type ) is used. In short pulse operation at the design current of 40 A an output power of 1 MW could be achieved for an accelerating voltage of 82 kV without depression voltage and with a depression voltage of 25 kV an output power of 1.15 MW at an accelerating voltage of 84 kV has been measured. For these values an efficiency of 49% was obtained. At constant accelerating voltages, the output power did not change up to depression voltages of 33 kV. The output beam of the gyrotron is injected into an RF-tight microwave chamber which is equipped with two water-cooled mirrors directing the beam towards the 1 MW water load. The second mirror inside the microwave chamber contains a directional output coupler formed by a row of holes in the mirror surface. A diode detector is connected to the directional coupler and the forward power can be determined once the signal has been calibrated. This was performed by calorimetric measurement of the RF wave in short-pulse measurements. The mode purity of the Gaussian beam was measured by an IR camera and a thin dielectric target plate placed at different positions across the RF beam. The measured beam distribution agrees very well with the theoretical predictions. After some problems with the RF load, long-pulse operation was performed: The power measurements were done by the signal of the diode detector placed at the second mirror. The measured output power of the calorimetric RF-load normally shows values reduced by about 20%. Output powers of 1 MW could be achieved for 10 s, and an energy as high as 90 MJ per pulse has been produced with an output power of 0.64 MW. The pulse lengths were mainly determined by the preset values, and due to lack of experimental time no attempt was made to increase the pulse length. Only for a 100 s pulse with 0.74 MW output power, a limitation was found due to a pressure increase beyond about 10-7mbar. The gyrotron was sent back to the manufacturer Thales Electron Devices for a visual inspection, and an improved prototype was built and delivered to Forschungszentrum Karlsruhe in the middle of April 2002.

Zinc Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

PubMed

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PubMed Central

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

Analytical model for the radio-frequency sheath

NASA Astrophysics Data System (ADS)

Czarnetzki, Uwe

2013-12-01

A simple analytical model for the planar radio-frequency (rf) sheath in capacitive discharges is developed that is based on the assumptions of a step profile for the electron front, charge exchange collisions with constant cross sections, negligible ionization within the sheath, and negligible ion dynamics. The continuity, momentum conservation, and Poisson equations are combined in a single integro-differential equation for the square of the ion drift velocity, the so called sheath equation. Starting from the kinetic Boltzmann equation, special attention is paid to the derivation and the validity of the approximate fluid equation for momentum balance. The integrals in the sheath equation appear in the screening function which considers the relative contribution of the temporal mean of the electron density to the space charge in the sheath. It is shown that the screening function is quite insensitive to variations of the effective sheath parameters. The two parameters defining the solution are the ratios of the maximum sheath extension to the ion mean free path and the Debye length, respectively. A simple general analytic expression for the screening function is introduced. By means of this expression approximate analytical solutions are obtained for the collisionless as well as the highly collisional case that compare well with the exact numerical solution. A simple transition formula allows application to all degrees of collisionality. In addition, the solutions are used to calculate all static and dynamic quantities of the sheath, e.g., the ion density, fields, and currents. Further, the rf Child-Langmuir laws for the collisionless as well as the collisional case are derived. An essential part of the model is the a priori knowledge of the wave form of the sheath voltage. This wave form is derived on the basis of a cubic charge-voltage relation for individual sheaths, considering both sheaths and the self-consistent self-bias in a discharge with arbitrary symmetry. The externally applied rf voltage is assumed to be sinusoidal, although the model can be extended to arbitrary wave forms, e.g., for dual-frequency discharges. The model calculates explicitly the cubic correction parameter in the charge-voltage relation for the case of highly asymmetric discharges. It is shown that the cubic correction is generally moderate but more pronounced in the collisionless case. The analytical results are compared to experimental data from the literature obtained by laser electric field measurements of the mean and dynamic fields in the capacitive sheath for various gases and pressures. Very good agreement is found throughout.

Analytical model for the radio-frequency sheath.

PubMed

Czarnetzki, Uwe

2013-12-01

A simple analytical model for the planar radio-frequency (rf) sheath in capacitive discharges is developed that is based on the assumptions of a step profile for the electron front, charge exchange collisions with constant cross sections, negligible ionization within the sheath, and negligible ion dynamics. The continuity, momentum conservation, and Poisson equations are combined in a single integro-differential equation for the square of the ion drift velocity, the so called sheath equation. Starting from the kinetic Boltzmann equation, special attention is paid to the derivation and the validity of the approximate fluid equation for momentum balance. The integrals in the sheath equation appear in the screening function which considers the relative contribution of the temporal mean of the electron density to the space charge in the sheath. It is shown that the screening function is quite insensitive to variations of the effective sheath parameters. The two parameters defining the solution are the ratios of the maximum sheath extension to the ion mean free path and the Debye length, respectively. A simple general analytic expression for the screening function is introduced. By means of this expression approximate analytical solutions are obtained for the collisionless as well as the highly collisional case that compare well with the exact numerical solution. A simple transition formula allows application to all degrees of collisionality. In addition, the solutions are used to calculate all static and dynamic quantities of the sheath, e.g., the ion density, fields, and currents. Further, the rf Child-Langmuir laws for the collisionless as well as the collisional case are derived. An essential part of the model is the a priori knowledge of the wave form of the sheath voltage. This wave form is derived on the basis of a cubic charge-voltage relation for individual sheaths, considering both sheaths and the self-consistent self-bias in a discharge with arbitrary symmetry. The externally applied rf voltage is assumed to be sinusoidal, although the model can be extended to arbitrary wave forms, e.g., for dual-frequency discharges. The model calculates explicitly the cubic correction parameter in the charge-voltage relation for the case of highly asymmetric discharges. It is shown that the cubic correction is generally moderate but more pronounced in the collisionless case. The analytical results are compared to experimental data from the literature obtained by laser electric field measurements of the mean and dynamic fields in the capacitive sheath for various gases and pressures. Very good agreement is found throughout.

Mass-selective isolation of ions stored in a quadrupole ion trap. A simulation study

NASA Astrophysics Data System (ADS)

March, Raymond E.; Londry, Frank A.; Alfred, Roland L.; Franklin, Anthony M.; Todd, John F. J.

1992-01-01

Trajectories of single ions stored in the quadrupole ion trap have been calculated using a simulation program described as the specific program for quadrupolar resonance (SPQR). Previously, the program has been used for the investigation of quadrupolar resonance excitation of ions with a static working point (or co-ordinates) in the stability diagram. The program has been modified to accommodate continuous d.c. and/or r.f. voltage ramps so as to permit calculation of ion trajectories while the working point is being changed. The modified program has been applied to the calculation of ion trajectories during ion isolation, or mass-selective storage, in the ion trap. The quadrupolar resonance excitation aspect of SPQR was not used in this study. Trajectories are displayed as temporal variations of ion kinetic energy, and axial and radial excursions from the centre of the ion trap. The working points of three ion species (m/z 144, 146 and 148), located initially on the qz, axis with qz [approximate] 0.12, were moved to the vicinity of the upper apex by a combination of r.f. and d.c. voltages applied in succession. Stable trajectories were maintained only for the ion species of m/z 146 for which the working point lay within this apex; the other ion species were ejected either radially or axially. The d.c. voltage was then reduced to zero so as to restore the working point of the isolated ion species to the qz axis. The amplitude of the r.f voltage was reduced to its initial value so as to retrieve the initial working point for m/z 146. The process extended over a real time of 2.9 ms, and was collision-free. The trajectory of the isolated ion was stable during this process; the ion species with m/z value lower than that of the target ion, that is, m/z 144, was ejected axially at the [beta]z = 1 boundary, while that with higher m/z value, that is, m/z 148, was ejected radially at the [beta]r = 0 boundary, as expected. The moderating effects of buffer gas were not taken into consideration and ion kinetic energies during the sorting period were found to be sufficiently great that dissociative losses may be appreciable in a collisional system. A possible strategy for reducing kinetic energy during this process has been proposed.

Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

NASA Astrophysics Data System (ADS)

Saveliev, Y. M.; Jackson, F.; Jones, J. K.; McKenzie, J. W.

2016-09-01

The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments) energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Active damping of the e-p instability at the Los Alamos Proton Storage Ring

NASA Astrophysics Data System (ADS)

Macek, R. J.; Assadi, S.; Byrd, J. M.; Deibele, C. E.; Henderson, S. D.; Lee, S. Y.; McCrady, R. C.; Pivi, M. F. T.; Plum, M. A.; Walbridge, S. B.; Zaugg, T. J.

2007-12-01

A prototype of an analog, transverse (vertical) feedback system for active damping of the two-stream (e-p) instability has been developed and successfully tested at the Los Alamos Proton Storage Ring (PSR). This system was able to improve the instability threshold by approximately 30% (as measured by the change in RF buncher voltage at instability threshold). The feedback system configuration, setup procedures, and optimization of performance are described. Results of several experimental tests of system performance are presented including observations of instability threshold improvement and grow-damp experiments, which yield estimates of instability growth and damping rates. A major effort was undertaken to identify and study several factors limiting system performance. Evidence obtained from these tests suggests that performance of the prototype was limited by higher instability growth rates arising from beam leakage into the gap at lower RF buncher voltage and the onset of instability in the horizontal plane, which had no feedback.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Water dissociation in a radio-frequency electromagnetic field with ex situ electrodes—modelling of discharge initiation

NASA Astrophysics Data System (ADS)

Schneider, Jens; Holzer, Frank; Rabe, Carsten; Häupl, Tilmann; Kopinke, Frank-Dieter; Roland, Ulf

2013-04-01

Applying a new experimental design with a capillary glass reactor and plate electrodes outside of the reactor allowed the initiation of discharges in aqueous electrolytes under the influence of a radio-frequency (RF) electromagnetic field. This study focused on the mechanism leading to the initiation of such discharges in the restriction of a glass tube. The light emission correlated with discharges was analysed with optical emission spectroscopy. Electrons with energies between 20 and 45 eV were responsible for the dissociation of water molecules into (excited) OH, H and O radicals. Current-voltage characteristics were measured before and under discharge conditions. Modelling of the experimental setup and simulation of electrical field strength distribution support the hypothesis of the origin of discharges in general and experimental findings such as ring-shaped discharges and a minimum solution conductivity of about 1 S m-1 required for discharge initiation with RF voltages of 2 kV.

A microfluidic microprocessor: controlling biomimetic containers and cells using hybrid integrated circuit/microfluidic chips.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Westervelt, Robert M

2010-11-07

We present an integrated platform for performing biological and chemical experiments on a chip based on standard CMOS technology. We have developed a hybrid integrated circuit (IC)/microfluidic chip that can simultaneously control thousands of living cells and pL volumes of fluid, enabling a wide variety of chemical and biological tasks. Taking inspiration from cellular biology, phospholipid bilayer vesicles are used as robust picolitre containers for reagents on the chip. The hybrid chip can be programmed to trap, move, and porate individual living cells and vesicles and fuse and deform vesicles using electric fields. The IC spatially patterns electric fields in a microfluidic chamber using 128 × 256 (32,768) 11 × 11 μm(2) metal pixels, each of which can be individually driven with a radio frequency (RF) voltage. The chip's basic functions can be combined in series to perform complex biological and chemical tasks and can be performed in parallel on the chip's many pixels for high-throughput operations. The hybrid chip operates in two distinct modes, defined by the frequency of the RF voltage applied to the pixels: Voltages at MHz frequencies are used to trap, move, and deform objects using dielectrophoresis and voltages at frequencies below 1 kHz are used for electroporation and electrofusion. This work represents an important step towards miniaturizing the complex chemical and biological experiments used for diagnostics and research onto automated and inexpensive chips.

A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

NASA Astrophysics Data System (ADS)

Riyan, Wang; Jiwei, Huang; Zhengping, Li; Weifeng, Zhang; Longyue, Zeng

2012-03-01

A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented. With a low noise transconductance amplifier (LNA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves a 45 dB conversion voltage gain, 2.7 dB NF, -7 dBm IIP3, and +60 dBm IIP2 with calibration from 2.3 to 2.7 GHz. The total RF front end with divider draws 40 mA from a single 1.2-V supply.

Development of an 83.2 MHz, 3.2 kW solid-state RF amplifier using Wilkinson power divider and combiner for a 10 MeV cyclotron

NASA Astrophysics Data System (ADS)

Song, Ho Seung; Ghergherehchi, Mitra; Oh, Seyoung; Chai, Jong Seo

2017-03-01

We design a stripline-type Wilkinson power divider and combiner for a 3.2 kW solid-state radio frequency (RF) amplifier module and optimize this setup. A Teflon-based printed circuit board is used in the power combiner to transmit high RF power efficiently in the limited space. The reflection coefficient (S11) and insertion loss (S21) related to impedance matching are characterized to determine the optimization process. The resulting two-way divider reflection coefficient and insertion loss were -48.00 dB and -3.22 dB, respectively. The two-way power combiner reflection coefficient and insertion loss were -20 dB and -3.3 dB, respectively. Moreover, the 3.2 kW solid-state RF power test results demonstrate that the proposed power divider and combiner exhibit a maximum efficiency value of 71.3% (combiner loss 5%) at 48 V supply voltage.

Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gahan, D.; Hopkins, M. B.; Dolinaj, B.

2008-03-15

A retarding field energy analyzer designed to measure ion energy distributions impacting a radio-frequency biased electrode in a plasma discharge is examined. The analyzer is compact so that the need for differential pumping is avoided. The analyzer is designed to sit on the electrode surface, in place of the substrate, and the signal cables are fed out through the reactor side port. This prevents the need for modifications to the rf electrode--as is normally the case for analyzers built into such electrodes. The capabilities of the analyzer are demonstrated through experiments with various electrode bias conditions in an inductively coupledmore » plasma reactor. The electrode is initially grounded and the measured distributions are validated with the Langmuir probe measurements of the plasma potential. Ion energy distributions are then given for various rf bias voltage levels, discharge pressures, rf bias frequencies - 500 kHz to 30 MHz, and rf bias waveforms - sinusoidal, square, and dual frequency.« less

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions necessary for the desired switching time and actuation voltage waveform. Moreover, process related design rules can be automatically verified.

RF current distribution and topology of RF sheath potentials in front of ICRF antennae

NASA Astrophysics Data System (ADS)

Colas, L.; Heuraux, S.; Brémond, S.; Bosia, G.

2005-08-01

The 2D (radial/poloidal) spatial topology of RF-induced convective cells developing radially in front of ion cyclotron range of frequency (ICRF) antennae is investigated, in relation to the spatial distribution of RF currents over the metallic structure of the antenna. This is done via a Green's function, determined from the ICRF wave coupling equations, and well-suited to open field lines extending toroidally far away on both sides of the antenna. Using such formalism, combined with a full-wave calculation using the 3D antenna code ICANT (Pécoul S. et al 2000 Comput. Phys. Commun. 146 166-87), two classes of convective cells are analysed. The first one appears in front of phased arrays of straps, and depending on the strap phasing, its topology is interpreted using the poloidal profiles of either the RF current or the RF voltage of the strip line theory. The other class of convective cells is specific to antenna box corners and is evidenced for the first time. Based on such analysis, general design rules are worked out in order to reduce the RF-sheath potentials, which generalize those proposed in the earlier literature, and concrete antenna design options are tested numerically. The merits of aligning all strap centres on the same (tilted) flux tube, and of reducing the antenna box toroidal conductivity in its lower and upper parts, are discussed.

Optimum Design of Millimeter-Wave Impatt Diode Oscillators.

DTIC Science & Technology

1983-10-01

assumed to be a quasi-sinusoid of the form v(t) a Vej"t (2.1) where V = V(t) and w = w(t) are real slowly varying functions of time . Slowly varying can be...are used: i dVF = 1 HF (3.12) RF dt 4 and 6 = w- i. (3.13) Therefore, the RF voltage and phase at different times can be calculated: VRF(t + dt ) = VF...15 2.2.2 The Circuit Model 18 2.2.3 Thermal Resistance 21 2.2.4 Thermal- Time Constant 23 2.3 Usefulness and Limitations of the Oscillator Model 26

Experimental Study of RF Energy Transfer System in Indoor Environment

NASA Astrophysics Data System (ADS)

Adami, S.-E.; Proynov, P. P.; Stark, B. H.; Hilton, G. S.; Craddock, I. J.

2014-11-01

This paper presents a multi-transmitter, 2.43 GHz Radio-Frequency (RF) wireless power transfer (WPT) system for powering on-body devices. It is shown that under typical indoor conditions, the received power range spans several orders of magnitude from microwatts to milliwatts. A body-worn dual-polarised rectenna (rectifying antenna) is presented, designed for situations where the dominant polarization is unpredictable, as is the case for the on-body sensors. Power management circuitry is demonstrated that optimally loads the rectenna even under highly intermittent conditions, and boosts the voltage to charge an on-board storage capacitor.

Carbon Nanotube Switches for Communication and Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Epp, Larry; Wong, Eric W.; Kowalczyk, Robert

2008-01-01

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters

NASA Astrophysics Data System (ADS)

Takahashi, Hajime; Hanafusa, Yuki; Kimura, Yoshinari; Kitamura, Masatoshi

2018-03-01

Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15 V.

DC-based smart PV-powered home energy management system based on voltage matching and RF module

PubMed Central

Hasan, W. Z. W.

2017-01-01

The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances’ consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances’ energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11–123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results. PMID:28934271

IEEE-802.15.4-based low-power body sensor node with RF energy harvester.

PubMed

Tran, Thang Viet; Chung, Wan-Young

2014-01-01

This paper proposes the design and implementation of a low-voltage and low-power body sensor node based on the IEEE 802.15.4 standard to collect electrocardiography (ECG) and photoplethysmography (PPG) signals. To achieve compact size, low supply voltage, and low power consumption, the proposed platform is integrated into a ZigBee mote, which contains a DC-DC booster, a PPG sensor interface module, and an ECG front-end circuit that has ultra-low current consumption. The input voltage of the proposed node is very low and has a wide range, from 0.65 V to 3.3 V. An RF energy harvester is also designed to charge the battery during the working mode or standby mode of the node. The power consumption of the proposed node reaches 14 mW in working mode to prolong the battery lifetime. The software is supported by the nesC language under the TinyOS environment, which enables the proposed node to be easily configured to function as an individual health monitoring node or a node in a wireless body sensor network (BSN). The proposed node is used to set up a wireless BSN that can simultaneously collect ECG and PPG signals and monitor the results on the personal computer.

DC-based smart PV-powered home energy management system based on voltage matching and RF module.

PubMed

Sabry, Ahmad H; Hasan, W Z W; Ab Kadir, Mza; Radzi, M A M; Shafie, S

2017-01-01

The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances' consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances' energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11-123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results.

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Tengxing; Peng, Yujia; Jiang, Wei

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE PAGES

Wang, Tengxing; Peng, Yujia; Jiang, Wei; ...

2016-10-31

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

PubMed

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

PubMed Central

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-01-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, C. Y.; Dey, J.; Madrak, R. L.

2015-07-13

A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmissionmore » line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.« less

FAST TRACK COMMUNICATION: Asymmetric surface barrier discharge plasma driven by pulsed 13.56 MHz power in atmospheric pressure air

NASA Astrophysics Data System (ADS)

Dedrick, J.; Boswell, R. W.; Charles, C.

2010-09-01

Barrier discharges are a proven method of generating plasmas at high pressures, having applications in industrial processing, materials science and aerodynamics. In this paper, we present new measurements of an asymmetric surface barrier discharge plasma driven by pulsed radio frequency (rf 13.56 MHz) power in atmospheric pressure air. The voltage, current and optical emission of the discharge are measured temporally using 2.4 kVp-p (peak to peak) 13.56 MHz rf pulses, 20 µs in duration. The results exhibit different characteristics to plasma actuators, which have similar discharge geometry but are typically driven at frequencies of up to about 10 kHz. However, the electrical measurements are similar to some other atmospheric pressure, rf capacitively coupled discharge systems with symmetric electrode configurations and different feed gases.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

Interrupting an Imminent Body Current Fault and Restoring Full Power in Milliseconds on a DIII-D National Fusion Facility Gyrotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ponce, Dan; Brambila, Rigo E.; Cengher, Mirela

The ECH Group at DIII-D has installed in-house engineered, FPGA-based, high voltage reference waveform generators on its gyrotron control systems to enhance the capabilities of the systems and replace obsolete equipment. The new hardware, named D-Wavegen, outputs 16-bit signals every microsecond and can respond to events and anomalies in real-time. These generators have been reliably pausing gyrotron rf output during periods of DIII-D plasma density that exceed the fault density trip level and restarting the rf output if the density falls below the trip level. While tightly monitoring gyrotron body current and internal pressure, D-Wavegen has also been reliably restarting,more » in a little over 10ms, gyrotrons that spontaneously ceased rf generation.« less

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

Interrupting an Imminent Body Current Fault and Restoring Full Power in Milliseconds on a DIII-D National Fusion Facility Gyrotron

DOE PAGES

Ponce, Dan; Brambila, Rigo E.; Cengher, Mirela; ...

2017-10-19

The ECH Group at DIII-D has installed in-house engineered, FPGA-based, high voltage reference waveform generators on its gyrotron control systems to enhance the capabilities of the systems and replace obsolete equipment. The new hardware, named D-Wavegen, outputs 16-bit signals every microsecond and can respond to events and anomalies in real-time. These generators have been reliably pausing gyrotron rf output during periods of DIII-D plasma density that exceed the fault density trip level and restarting the rf output if the density falls below the trip level. While tightly monitoring gyrotron body current and internal pressure, D-Wavegen has also been reliably restarting,more » in a little over 10ms, gyrotrons that spontaneously ceased rf generation.« less

Electron beam gun with kinematic coupling for high power RF vacuum devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borchard, Philipp

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composedmore » of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.« less

Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

NASA Astrophysics Data System (ADS)

Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

2011-10-01

In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

NASA Astrophysics Data System (ADS)

Kim, Woo-Byung; Lee, Dong Keun; Ryu, Sang Ouk

2014-07-01

The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm2/Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high I on/off ratio of > 109. Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

Advanced Theory of Driven Birdcage Resonator with Losses for Biomedical Magnetic Resonance Imaging and Spectroscopy

PubMed Central

Novikov, Alexander

2010-01-01

A complete time-dependent physics theory of symmetric unperturbed driven Hybrid Birdcage resonator was developed for general application. In particular, the theory can be applied for RF coil engineering, computer simulations of coil-sample interaction, etc. Explicit time dependence is evaluated for different forms of driving voltage. The major steps of the solution development are shown and appropriate explanations are given. Green’s functions and spectral density formula were developed for any form of periodic driving voltage. The concept of distributed power losses based on transmission line theory is developed for evaluation of local losses of a coil. Three major types of power losses are estimated as equivalent series resistances in the circuit of the Birdcage resonator. Values of generated resistances in Legs and End-Rings are estimated. An application of the theory is shown for many practical cases. Experimental curve of B1 field polarization dependence is measured for eight-sections Birdcage coil. It was shown, that the steady-state driven resonance frequencies do not depend on damping factor unlike the free oscillation (transient) frequencies. An equivalent active resistance is generated due to interaction of RF electromagnetic field with a sample. Resistance of the conductor (enhanced by skin effect), Eddy currents and dielectric losses are the major types of losses which contribute to the values of generated resistances. A biomedical sample for magnetic resonance imaging and spectroscopy is the source of the both Eddy current and dielectric losses of a coil. As demonstrated by the theory, Eddy currents losses is the major effect of coil shielding. PMID:20869184

A novel injection-locked amplitude-modulated magnetron at 1497 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neubauer, Michael; Wang, Haipeng

2015-12-15

Thomas Jefferson National Accelerator Facility (JLab) uses low efficiency klystrons in the CEBAF machine. In the older portion they operate at 30% efficiency with a tube mean time between failure (MTBF) of five to six years. A highly efficient source (>55-60%) must provide a high degree of backwards compatibility, both in size and voltage requirements, to replace the klystron presently used at JLab, while providing energy savings. Muons, Inc. is developing a highly reliable, highly efficient RF source based upon a novel injection-locked amplitude modulated (AM) magnetron with a lower total cost of ownership, >80% efficiency, and MTBF of sixmore » to seven years. The design of the RF source is based upon a single injection-locked magnetron system at 8 kW capable of operating up to 13 kW, using the magnetron magnetic field to achieve the AM required for backwards compatibility to compensate for microphonics and beam loads. A novel injection-locked 1497 MHz 8 kW AM magnetron with a trim magnetic coil was designed and its operation numerically simulated during the Phase I project. The low-level RF system to control the trim field and magnetron anode voltage was designed and modeled for operation at the modulation frequencies of the microphonics. A plan for constructing a prototype magnetron and control system was developed.« less

Radio-frequency-assisted current startup in the fusion engineering device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S. K.; Peng, Yueng Kay Martin; Kammash, T.

1984-01-01

Auxiliary radio-frequency (RF) heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device (FED) (R{sub 0} = 4.8 m, a = 1.3 m, sigma = 1.6, B(R{sub 0}) = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at about90 GHz is used to create a small volume of high conductivity plasma (T {sub e} approx. = 100 eV, n {sub e} approx. = 10{supmore » 19} m{sup -3}) near the upper hybrid resonance (UHR) region. This plasma conditioning, referred to as preheating, permits a small radius (a{sub 0} approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to about 100 V without rf assist). During the subsequent plasma expansion and current rise phase, a combination of rf heating (up to 5 MW) and linear current ramping leads to a substantial savings in voltseconds by (a) minimizing the resistive flux consumption and (b) producing broad current density profiles. (With such broad profiles, the internal flux requirements are maintained at or near the flat profile limit.)« less

Radio-frequency-assisted current startup in the Fusion Engineering Device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Kammash, T.; Martin Peng, Y.K.

1984-07-01

Auxiliary radio-frequency (RF) heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device (FED) (R/sub 0/ = 4.8 m, a = 1.3 m, sigma = 1.6, B(R/sub 0/) = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at about90 GHz is used to create a small volume of high conductivity plasma (T /sub e/ approx. = 100 eV, n /sub e/ approx. = 10/supmore » 19/ m/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning, referred to as preheating, permits a small radius (a/sub 0/ approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to about 100 V without rf assist). During the subsequent plasma expansion and current rise phase, a combination of rf heating (up to 5 MW) and linear current ramping leads to a substantial savings in voltseconds by (a) minimizing the resistive flux consumption and (b) producing broad current density profiles. (With such broad profiles, the internal flux requirements are maintained at or near the flat profile limit.)« less

Development of a high-power solid-state switch using static induction thyristors for a klystron modulator

NASA Astrophysics Data System (ADS)

Tokuchi, Akira; Kamitsukasa, Fumiyoshi; Furukawa, Kazuya; Kawase, Keigo; Kato, Ryukou; Irizawa, Akinori; Fujimoto, Masaki; Osumi, Hiroki; Funakoshi, Sousuke; Tsutsumi, Ryouta; Suemine, Shoji; Honda, Yoshihide; Isoyama, Goro

2015-01-01

We developed a solid-state switch with static induction thyristors for the klystron modulator of the L-band electron linear accelerator (linac) at the Institute of Scientific and Industrial Research, Osaka University. This switch is designed to have maximum specifications of a holding voltage of 25 kV and a current of 6 kA at the repetition frequency of 10 Hz for forced air cooling. The turn-on time of the switch was measured with a matched resistor to be 270 ns, which is sufficiently fast for the klystron modulator. The switch is retrofitted in the modulator to generate 1.3 GHz RF pulses with durations of either 4 or 8 μs using a 30 MW klystron, and the linac is successfully operated under maximum conditions. This finding demonstrates that the switch can be used as a high-power switch for the modulator. Pulse-to-pulse variations of the klystron voltage are measured to be less than 0.015%, and those of RF power and phase are lower than 0.15% and 0.1°, respectively. These values are significantly smaller than those obtained with a thyratron; hence, the stability of the main RF system is improved. The solid-state switch has been used in normal operation of the linac for more than a year without any serious trouble. Thus, we confirmed the switch's robustness and long-term reliability.

Compact microwave ion source for industrial applications.

PubMed

Cho, Yong-Sub; Kim, Dae-Il; Kim, Han-Sung; Seol, Kyung-Tae; Kwon, Hyeok-Jung; Hong, In-Seok

2012-02-01

A 2.45 GHz microwave ion source for ion implanters has many good properties for industrial application, such as easy maintenance and long lifetime, and it should be compact for budget and space. But, it has a dc current supply for the solenoid and a rf generator for plasma generation. Usually, they are located on high voltage platform because they are electrically connected with beam extraction power supply. Using permanent magnet solenoid and multi-layer dc break, high voltage deck and high voltage isolation transformer can be eliminated, and the dose rate on targets can be controlled by pulse duty control with semiconductor high voltage switch. Because the beam optics does not change, beam transfer components, such as focusing elements and beam shutter, can be eliminated. It has shown the good performances in budget and space for industrial applications of ion beams.

Evaluation of beam divergence of a negative hydrogen ion beam using Doppler shift spectroscopy diagnostics

NASA Astrophysics Data System (ADS)

Deka, A. J.; Bharathi, P.; Pandya, K.; Bandyopadhyay, M.; Bhuyan, M.; Yadav, R. K.; Tyagi, H.; Gahlaut, A.; Chakraborty, A.

2018-01-01

The Doppler Shift Spectroscopy (DSS) diagnostic is in the conceptual stage to estimate beam divergence, stripping losses, and beam uniformity of the 100 keV hydrogen Diagnostics Neutral Beam of International Thermonuclear Experimental Reactor. This DSS diagnostic is used to measure the above-mentioned parameters with an error of less than 10%. To aid the design calculations and to establish a methodology for estimation of the beam divergence, DSS measurements were carried out on the existing prototype ion source RF Operated Beam Source in India for Negative ion Research. Emissions of the fast-excited neutrals that are generated from the extracted negative ions were collected in the target tank, and the line broadening of these emissions were used for estimating beam divergence. The observed broadening is a convolution of broadenings due to beam divergence, collection optics, voltage ripple, beam focusing, and instrumental broadening. Hence, for estimating the beam divergence from the observed line broadening, a systematic line profile analysis was performed. To minimize the error in the divergence measurements, a study on error propagation in the beam divergence measurements was carried out and the error was estimated. The measurements of beam divergence were done at a constant RF power of 50 kW and a source pressure of 0.6 Pa by varying the extraction voltage from 4 kV to10 kV and the acceleration voltage from 10 kV to 15 kV. These measurements were then compared with the calorimetric divergence, and the results seemed to agree within 10%. A minimum beam divergence of ˜3° was obtained when the source was operated at an extraction voltage of ˜5 kV and at a ˜10 kV acceleration voltage, i.e., at a total applied voltage of 15 kV. This is in agreement with the values reported in experiments carried out on similar sources elsewhere.

Effects of Perfusion on Radiofrequency Ablation in Swine Kidneys1

PubMed Central

Chang, Isaac; Mikityansky, Igor; Wray-Cahen, Diane; Pritchard, William F.; Karanian, John W.; Wood, Bradford J.

2008-01-01

PURPOSE: To evaluate the effect of vascular occlusion on the size of radiofrequency (RF) ablation lesions and to evaluate embolization as an occlusion method. MATERIALS AND METHODS: The kidneys of six swine were surgically exposed. Fifteen RF ablation lesions were created in nine kidneys by using a 2-cm-tip single-needle ablation probe in varying conditions: Seven lesions were created with normal blood flow and eight were created with blood flow obstructed by means of vascular clamping (n = 5) or renal artery embolization (n = 3). The temperature, applied voltage, current, and impedance were recorded during RF ablation. Tissue-cooling curves acquired for 2 minutes immediately after the ablation were compared by using regression analysis. Lesions were bisected, and their maximum diameters were measured and compared by using analysis of variance. RESULTS: The mean diameter of ablation lesions created when blood flow was obstructed was 60% greater than that of lesions created when blood flow was normal (1.38 cm ± 0.05 [standard error of mean] vs 0.86 cm ± 0.07, P < .001). The two methods of flow obstruction yielded lesions of similar mean sizes: 1.40 cm ± 0.06 with vascular clamping and 1.33 cm ± 0.07 with embolization. The temperature at the probe tip when lesions were ablated with normal blood flow decreased more rapidly than did the temperature when lesions were ablated after flow obstruction (P < .001), but no significant differences in tissue-cooling curves between the two flow obstruction methods were observed. CONCLUSION: Obstruction of renal blood flow before and during RF ablation resulted in larger thermal lesions with potentially less variation in size compared with the lesions created with normal nonobstructed blood flow. Selective arterial embolization of the kidney vessels may be a useful adjunct to RF ablation of kidney tumors. PMID:15128994

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Micro-fabricated DC comparison calorimeter for RF power measurement.

PubMed

Neji, Bilel; Xu, Jing; Titus, Albert H; Meltzer, Joel

2014-10-27

Diode detection and bolometric detection have been widely used to measure radio frequency (RF) power. However, flow calorimeters, in particular micro-fabricated flow calorimeters, have been mostly unexplored as power meters. This paper presents the design, micro-fabrication and characterization of a flow calorimeter. This novel device is capable of measuring power from 100 μW to 200 mW. It has a 50-Ohm load that is heated by the RF source, and the heat is transferred to fluid in a microchannel. The temperature change in the fluid is measured by a thermistor that is connected in one leg of a Wheatstone bridge. The output voltage change of the bridge corresponds to the RF power applied to the load. The microfabricated device measures 25.4 mm × 50.8 mm, excluding the power supplies, microcontroller and fluid pump. Experiments demonstrate that the micro-fabricated sensor has a sensitivity up to 22 × 10⁻³ V/W. The typical resolution of this micro-calorimeter is on the order of 50 μW, and the best resolution is around 10 μW. The effective efficiency is 99.9% from 0−1 GHz and more than 97.5% at frequencies up to 4 GHz. The measured reflection coefficient of the 50-Ohm load and coplanar wave guide is less than −25 dB from 0−2 GHz and less than −16 dB at 2−4 GHz.

Progress in GaN devices performances and reliability

NASA Astrophysics Data System (ADS)

Saunier, P.; Lee, C.; Jimenez, J.; Balistreri, A.; Dumka, D.; Tserng, H. Q.; Kao, M. Y.; Chowdhury, U.; Chao, P. C.; Chu, K.; Souzis, A.; Eliashevich, I.; Guo, S.; del Alamo, J.; Joh, J.; Shur, M.

2008-02-01

With the DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract, TriQuint Semiconductor and its partners, BAE Systems, Lockheed Martin, IQE-RF, II-VI, Nitronex, M.I.T., and R.P.I. are achieving great progress towards the overall goal of making Gallium Nitride a revolutionary RF technology ready to be inserted in defense and commercial applications. Performance and reliability are two critical components of success (along with cost and manufacturability). In this paper we will discuss these two aspects. Our emphasis is now operation at 40 V bias voltage (we had been working at 28 V). 1250 µm devices have power densities in the 6 to 9 W/mm with associated efficiencies in the low- to mid 60 % and associated gain in the 12 to 12.5 dB at 10 GHz. We are using a dual field-plate structure to optimize these performances. Very good performances have also been achieved at 18 GHz with 400 µm devices. Excellent progress has been made in reliability. Our preliminary DC and RF reliability tests at 40 V indicate a MTTF of 1E6hrs with1.3 eV activation energy at 150 0C channel temperature. Jesus Del Alamo at MIT has greatly refined our initial findings leading to a strain related theory of degradation that is driven by electric fields. Degradation can occur on the drain edge of the gate due to excessive strain given by inverse piezoelectric effect.

Experimental pathways to understand and avoid high-Z impurity contamination from ICRF heating in tokamaks

NASA Astrophysics Data System (ADS)

Reinke, Matthew

2016-10-01

Recent results from Alcator C-Mod and JET demonstrate progress in understanding and mitigating core high-Z impurity contamination linked to ICRF heating in tokamaks with high-Z PFCs. Theory has identified two likely mechanisms: impurity sources due to sputtering enhanced by RF-rectified sheaths and greater cross-field SOL transport due to ExB convective cells. New experiments on Alcator C-Mod and JET demonstrate convective cell transport is likely a sub-dominant effect, despite directly observing ExB flows from rectified RF fields on C-Mod. Trace N2 introduced in the far SOL on field lines connected to and well away from an active ICRF antenna result in similar levels of core nitrogen, indicating local RF-driven transport is weak. This suggests the core high-Z density, nZ,core, is determined by sheath-induced sputtering and RF-independent SOL transport, allowing further reductions through antenna design. ICRF heating on C-Mod uses a unique, field aligned (FAA) and a pair of conventional, toroidally aligned (TAA) antennas. The FAA is designed to reduce rectified voltages relative to the TAA, and the impact of sheath-induced sputtering is explored by observing nZ,core while varying the TAA/FAA heating mix. A reduction of approximately 50% in core high-Z content is seen in L-modes when using the FAA and high-Z sources at the antenna limiter are effectively eliminated, indicating the remaining RF-driven source is away from the limiter. A drop in nZ,core may also be realized by locating the RF antenna on the inboard side where SOL transport aids impurity screening. New C-Mod experiments demonstrate up to a factor of 5 reduction in core nitrogen when N2 is injected on the high-field side as compared to low-field side impurity fueling. Varying the magnetic topology helps to elucidate the SOL transport physics responsible, laying a physics basis for inboard RF antenna placement. This work is supported by U.S. DOE Award DE-FC02-99ER54512, using Alcator C-Mod and carried out within the framework of the EUROfusion Consortium and has received funding from Euratom under Grant Agreement No 633053.

Magnetic Compensation for Second-Order Doppler Shift in LITS

NASA Technical Reports Server (NTRS)

Burt, Eric; Tjoelker, Robert

2008-01-01

The uncertainty in the frequency of a linear-ion-trap frequency standard (LITS) can be reduced substantially by use of a very small magnetic inhomogeneity tailored to compensate for the residual second-order Doppler shift. An effect associated with the relativistic time dilatation, one cause of the second-order Doppler shift, is ion motion that is attributable to the trapping radio-frequency (RF)electromagnetic field used to trap ions. The second-order Doppler shift is reduced by using a multi-pole trap; however it is still the largest source of systematic frequency shift in the latest generation of LITSs, which are among the most stable clocks in the world. The present compensation scheme reduces the frequency instability of the affected LITS to about a tenth of its previous value. The basic principles of prior generation LITSs were discussed in several prior NASA Tech Briefs articles. Below are recapitulated only those items of basic information necessary to place the present development in context. A LITS includes a microwave local oscillator, the frequency of which is stabilized by comparison with the frequency of the ground state hyperfine transition of 199Hg+ ions. The comparison involves a combination of optical and microwave excitation and interrogation of the ions in a linear ion trap in the presence of a nominally uniform magnetic field. In the current version of the LITS, there are two connected traps (see figure): (1) a quadrupole trap wherein the optical excitation and measurement take place and (2) a 12-pole trap (denoted the resonance trap), wherein the microwave interrogation takes place. The ions are initially loaded into the quadrupole trap and are thereafter shuttled between the two traps. Shuttling ions into the resonance trap allows sensitive microwave interrogation to take place well away from loading interference. The axial magnetic field for the resonance trap is generated by an electric current in a finely wound wire coil surrounded by magnetic shields. In the quadrupole and 12-pole traps, the potentials are produced by RF voltages applied to even numbers (4 and 12, respectively) of parallel rods equally spaced around a circle. The polarity of the voltage on each rod is opposite that of the voltage on the adjacent rod. As a result, the amplitude of the RF trapping field is zero along the centerline and increases, with radius, to a maximum value near the rods.

Error sources affecting thermocouple thermometry in RF electromagnetic fields.

PubMed

Chakraborty, D P; Brezovich, I A

1982-03-01

Thermocouple thermometry errors in radiofrequency (typically 13, 56 MHZ) electromagnetic fields such as are encountered in hyperthermia are described. RF currents capacitatively or inductively coupled into the thermocouple-detector circuit produce errors which are a combination of interference, i.e., 'pick-up' error, and genuine rf induced temperature changes at the junction of the thermocouple. The former can be eliminated by adequate filtering and shielding; the latter is due to (a) junction current heating in which the generally unequal resistances of the thermocouple wires cause a net current flow from the higher to the lower resistance wire across the junction, (b) heating in the surrounding resistive material (tissue in hyperthermia), and (c) eddy current heating of the thermocouple wires in the oscillating magnetic field. Low frequency theories are used to estimate these errors under given operating conditions and relevant experiments demonstrating these effects and precautions necessary to minimize the errors are described. It is shown that at 13.56 MHz and voltage levels below 100 V rms these errors do not exceed 0.1 degrees C if the precautions are observed and thermocouples with adequate insulation (e.g., Bailey IT-18) are used. Results of this study are being currently used in our clinical work with good success.

Multi-service highly sensitive rectifier for enhanced RF energy scavenging.

PubMed

Shariati, Negin; Rowe, Wayne S T; Scott, James R; Ghorbani, Kamran

2015-05-07

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478-496 and 852-869 MHz) and exhibits favorable impedance matching over a broad input power range (-40 to -10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of -10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments.

Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

PubMed Central

Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

2015-01-01

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

Mode control in a high-gain relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

Experimental studies of the overshoot and undershoot in pulse-modulated radio-frequency atmospheric discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huo, W. G.; Li, R. M.; Shi, J. J.

The overshoot and undershoot of the applied voltage on the electrodes, the discharge current, and radio frequency (RF) power were observed at the initial phase of pulse-modulated (PM) RF atmospheric pressure discharges, but factors influencing the overshoot and undershoot have not been fully elucidated. In this paper, the experimental studies were performed to seek the reasons for the overshoot and undershoot. The experimental results show that the overshoot and undershoot are associated with the pulse frequency, the rise time of pulse signal, and the series capacitor C{sub s} in the inversely L-shaped matching network. In the case of a highmore » RF power discharge, these overshoot and undershoot become serious when shortening the rise time of a pulse signal (5 ns) or operating at a moderate pulse frequency (500 Hz or 1 kHz).« less

High-power microstrip RF switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1971-01-01

A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented.

Spin-Flipping Polarized Deuterons At COSY

NASA Astrophysics Data System (ADS)

Yonehara, K.; Krisch, A. D.; Morozov, V. S.; Raymond, R. S.; Wong, V. K.; Bechstedt, U.; Gebel, R.; Lehrach, A.; Lorenz, B.; Maier, R.; Prasuhn, D.; Schnase, A.; Stockhorst, H.; Eversheim, D.; Hinterberger, F.; Rohdjess, H.; Ulbrich, K.; Scobel, W.

2004-02-01

We recently stored a 1.85 GeV/c vertically polarized deuteron beam in the COSY Ring in Jülich; we then spin-flipped it by ramping a new air-core rf dipole's frequency through an rf-induced spin resonance to manipulate the polarization direction of the deuteron beam. We first experimentally determined the resonance's frequency and set the dipole's rf voltage to its maximum; then we varied its frequency ramp time and frequency range. We used the EDDA detector to measure the vector and tensor polarization asymmetries. We have not yet extracted the deuteron's tensor polarization spin-flip parameters from the measured data, since our short run did not provide adequate tensor analyzing-power data at 1.85 GeV/c. However, with a 100 Hz frequency ramp and our longest ramp time of 400 s, the deuterons' vector polarization spin-flip efficiency was 48±1%.

Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz.

PubMed

Hornstein, Melissa K; Bajaj, Vikram S; Griffin, Robert G; Temkin, Richard J

2007-02-01

The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE(2) (,) (3) (,) (1) mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents.

Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz

PubMed Central

Hornstein, Melissa K.; Bajaj, Vikram S.; Griffin, Robert G.; Temkin, Richard J.

2007-01-01

The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE2,3,1 mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents. PMID:17687412

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, January-March 31, 1980

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, W

1980-06-01

The effect of a variety of plasma cleaning procedures on the level of bulk and interfacial contaminants in the films is analyzed by secondary ion mass spectrometry. Bulk levels of 0 have been reduced considerably by N/sub 2/ plasma cleaning, but no reproducible reductions in interfacial contamination have been achieved. A method is described of determining the gap state density N(epsilon) of a-Si:H from field effect, in which no assumptions are made about the form of the band bending in the semiconductor. The problem is reduced to three successive integrals over an assumed N(epsilon) by change of variable from distancemore » to applied voltage and the best fit to the experimental data is obtained by iteration of the assumed state density. The method is shown to be no less rigorous and considerably more economical than the recent analysis of Goodman, Fritzsche and Ozaki. In addition, an experimental means of determining the flat-band voltage to within 5% of the maximum gate voltage V/sub g/ used is demonstrated, by finding the value of V/sub g/ for which (kT/e)dlog I/sub SD//dV/sub g/ is independent of temperature.« less

RF pulse shape control in the compact linear collider test facility

NASA Astrophysics Data System (ADS)

Kononenko, Oleksiy; Corsini, Roberto

2018-07-01

The Compact Linear Collider (CLIC) is a study for an electron-positron machine aiming at accelerating and colliding particles at the next energy frontier. The CLIC concept is based on the novel two-beam acceleration scheme, where a high-current low-energy drive beam generates RF in series of power extraction and transfer structures accelerating the low-current main beam. To compensate for the transient beam-loading and meet the energy spread specification requirements for the main linac, the RF pulse shape must be carefully optimized. This was recently modelled by varying the drive beam phase switch times in the sub-harmonic buncher so that, when combined, the drive beam modulation translates into the required voltage modulation of the accelerating pulse. In this paper, the control over the RF pulse shape with the phase switches, that is crucial for the success of the developed compensation model, is studied. The results on the experimental verification of this control method are presented and a good agreement with the numerical predictions is demonstrated. Implications for the CLIC beam-loading compensation model are also discussed.

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

NASA Astrophysics Data System (ADS)

Park, M. G.; Choi, W. S.; Hong, B.; Kim, Y. T.; Yoon, D. H.

2002-05-01

In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (Ta) and radio frequency (rf) power. The substrate temperature (Ts) was 250 °C, the rf power was varied from 30 to 400 W, and the range of Ta was from 400 to 600 °C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH4+CH4 gas mixture. The experimental results have shown that the optical bandgap energy (Eg) of the a-SiC:H thin films changed little on the annealing temperature while Eg increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

Challenges in Radiofrequency Pasteurization of Shell Eggs: Coagulation Rings.

PubMed

Lau, Soon Kiat; Thippareddi, Harshavardhan; Jones, David; Negahban, Mehrdad; Subbiah, Jeyamkondan

2016-10-01

A total of 50 different configurations of simple radiofrequency (RF) heating at 27.12 MHz of a shell egg were simulated using a finite element model with the purpose of pasteurizing the egg. Temperature-dependent thermal and dielectric properties of the yolk, albumen, and shell were measured, fitted, and introduced into the model. A regression equation that relates the top electrode voltage to the gap between the electrodes and vertical position of the egg was developed. Simulation and experimental results had good agreement in terms of temperature deviation (root mean squared error ranged from 0.35 °C to 0.48 °C) and both results demonstrated the development of a "coagulation ring" around the air cell. The focused heating near the air cell of the egg prevented pasteurization of the egg due to its impact on quality (coagulation). Analysis of the electric field patterns offered a perspective on how nonuniform RF heating could occur in heterogeneous food products. The results can be used to guide development of RF heating for heterogeneous food products and further development of RF pasteurization of eggs. © 2016 Institute of Food Technologists®.

A distributed monitoring system for photovoltaic arrays based on a two-level wireless sensor network

NASA Astrophysics Data System (ADS)

Su, F. P.; Chen, Z. C.; Zhou, H. F.; Wu, L. J.; Lin, P. J.; Cheng, S. Y.; Li, Y. F.

2017-11-01

In this paper, a distributed on-line monitoring system based on a two-level wireless sensor network (WSN) is proposed for real time status monitoring of photovoltaic (PV) arrays to support the fine management and maintenance of PV power plants. The system includes the sensing nodes installed on PV modules (PVM), sensing and routing nodes installed on combiner boxes of PV sub-arrays (PVA), a sink node and a data management centre (DMC) running on a host computer. The first level WSN is implemented by the low-cost wireless transceiver nRF24L01, and it is used to achieve single hop communication between the PVM nodes and their corresponding PVA nodes. The second level WSN is realized by the CC2530 based ZigBee network for multi-hop communication among PVA nodes and the sink node. The PVM nodes are used to monitor the PVM working voltage and backplane temperature, and they send the acquired data to their PVA node via the nRF24L01 based first level WSN. The PVA nodes are used to monitor the array voltage, PV string current and environment irradiance, and they send the acquired and received data to the DMC via the ZigBee based second level WSN. The DMC is designed using the MATLAB GUIDE and MySQL database. Laboratory experiment results show that the system can effectively acquire, display, store and manage the operating and environment parameters of PVA in real time.

Non-Destructive Testing of Semiconductors Using Surface Acoustic Wave.

DTIC Science & Technology

1983-12-31

are thin film A). fingers (1 ;im) alternately connected to bus pads as shown in fig. 1.lb. An RF voltage applied to the transducer creates an...inversion 140 layer sets in (the deep depletion regime). This timing arrangement is not difficult to attain, due to the long minoritv carriler response

Breakdown Characteristics of a Radio-Frequency Atmospheric Glow Discharge

NASA Astrophysics Data System (ADS)

Shi, Jianjun; Kong, Michael

2004-09-01

Radio-frequency (rf) atmospheric pressure glow discharges (APGD) are a capacitive nonthermal plasma with distinct advantage of low gas temperature and long-term stability. In practice their ignition is challenging particularly when they are generated at large electrode gaps. To this end, this contribution reports a one-dimensional fluid simulation of gas breakdown over a large pressure range of 100 - 760 Torr so that key physical processes can be understood in the ignition phase of rf APGD. Our model is an electron-hybrid model in which electrons are treated kinetically and all other plasma species are treated hydrodynamically. Computational results suggest that as the pressure-distance product increases from 25 Torr cm upwards the breakdown voltage increases in a way that resembles the right-hand-side branch of a Pachen curve. Importance of secondary electron emission is shown as well as its dependence on gas pressure even though identical electrode material is assumed. With these factors considered, excellent agreement with experimental data is achieved. Finally frequency dependence of the breakdown voltage is calculated and again found to agree with experimental data.

An Adaptable Multiple Power Source for Mass Spectrometry and other Scientific Instruments

DOE PAGES

Lin, Tzu-Yung; Anderson, Gordon A.; Norheim, Randolph V.; ...

2015-09-18

Power supplies are commonly used in the operation of many types of scientific equipment, including mass spectrometers and ancillary instrumentation. A generic modern mass spectrometer comprises an ionization source, such as electrospray ionization (ESI), ion transfer devices such as ion funnels and multipole ion guides, and ion signal detection apparatus. Very often such platforms include, or are interfaced with ancillary elements in order to manipulate samples before or after ionization. In order to operate such scientific instruments, numerous direct current (DC) channels and radio frequency (RF) signals are required, along with other controls such as temperature regulation. In particular, DCmore » voltages in the range of ±400 V, along with MHz range RF signals with peak-to-peak amplitudes in the hundreds of volts range are commonly used to transfer ionized samples under vacuum. Additionally, an ESI source requires a high voltage (HV) DC source capable of producing several thousand volts and heaters capable of generating temperatures up to 300°C. All of these signals must be properly synchronized and managed in order to carry out ion trapping, accumulation and detection.« less

Effectiveness of BaTiO 3 dielectric patches on YBa 2Cu 3O 7 thin films for MEM switches

DOE PAGES

Vargas, J.; Hijazi, Y.; Noel, J.; ...

2014-05-12

A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniquesmore » as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2Cu 3O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.« less

Effect of frequency on the uniformity of symmetrical RF CCP discharges

NASA Astrophysics Data System (ADS)

Liu, Yue; Booth, Jean-Paul; Chabert, Pascal

2018-05-01

A 2D Cartesian electrostatic particle-in-cell/Monte Carlo collision (PIC/MCC) model presented previously (Liu et al 2018 Plasma Sources Sci. Technol. 27 025006) is used to investigate the effect of the driving frequency (over the range of 15–45 MHz) on the plasma uniformity in radio frequency (RF) capacitively coupled plasma (CCP) discharges in a geometrically symmetric reactor with a dielectric side wall in argon gas. The reactor size (12 cm electrode length, 2.5 cm gap) and driving frequency are sufficiently small that electromagnetic effects can be ignored. Previously, we showed (Liu et al 2018 Plasma Sources Sci. Technol. 27 025006) that for 15 MHz excitation, Ohmic heating of electrons by the electric field perpendicular to the electrodes is enhanced in a region in front of the dielectric side wall, leading to a maximum in electron density there. In this work we show that increasing the excitation frequency (at constant applied voltage amplitude) not only increases the overall electron heating and density but also causes a stronger, narrower peak in electron heating closer to the dielectric wall, improving the plasma uniformity along the electrodes. This heating peak comes both from enhanced perpendicular electron heating and from the appearance at high frequency of significant parallel heating. The latter is caused by the presence of a significant parallel-direction RF oscillating electric field in the corners. Whereas at the reactor center the sheaths oscillate perpendicularly to the electrodes, near the dielectric edge they move in and out of the corners and must be treated in two dimensions.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

PubMed Central

Zhang, Zhiqiang; Liao, Xiaoping

2017-01-01

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively. PMID:28629144

Characterization of low-pressure microwave and radio frequency discharges in oxygen applying optical emission spectroscopy and multipole resonance probe

NASA Astrophysics Data System (ADS)

Steves, Simon; Styrnoll, Tim; Mitschker, Felix; Bienholz, Stefan; Nikita, Bibinov; Awakowicz, Peter

2013-11-01

Optical emission spectroscopy (OES) and multipole resonance probe (MRP) are adopted to characterize low-pressure microwave (MW) and radio frequency (RF) discharges in oxygen. In this context, both discharges are usually applied for the deposition of permeation barrier SiOx films on plastic foils or the inner surface of plastic bottles. For technological reasons the MW excitation is modulated and a continuous wave (cw) RF bias is used. The RF voltage produces a stationary low-density plasma, whereas the high-density MW discharge is pulsed. For the optimization of deposition process and the quality of the deposited barrier films, plasma conditions are characterized using OES and MRP. To simplify the comparison of applied diagnostics, both MW and RF discharges are studied separately in cw mode. The OES and MRP diagnostic methods complement each other and provide reliable information about electron density and electron temperature. In the MW case, electron density amounts to ne = (1.25 ± 0.26) × 1017 m-3, and kTe to 1.93 ± 0.20 eV, in the RF case ne = (6.8 ± 1.8)×1015 m-3 and kTe = 2.6 ± 0.35 eV. The corresponding gas temperatures are 760±40 K and 440±20 K.

n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

PubMed

Zhang, Zhiqiang; Liao, Xiaoping

2017-06-17

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

Frequency-tuning radiofrequency plasma source operated in inductively-coupled mode under a low magnetic field

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Nakano, Yudai; Ando, Akira

2017-07-01

A radiofrequency (rf) inductively-coupled plasma source is operated with a frequency-tuning impedance matching system, where the rf frequency is variable in the range of 20-50 MHz and the maximum power is 100 W. The source consists of a 45 mm-diameter pyrex glass tube wound by an rf antenna and a solenoid providing a magnetic field strength in the range of 0-200 Gauss. A reflected rf power for no plasma case is minimized at the frequency of ˜25 MHz, whereas the frequency giving the minimum reflection with the high density plasma is about 28 MHz, where the density jump is observed when minimizing the reflection. A high density argon plasma above 1× {{10}12} cm-3 is successfully obtained in the source for the rf power of 50-100 W, where it is observed that an external magnetic field of a few tens of Gauss yields the highest plasma density in the present configuration. The frequency-tuning plasma source is applied to a compact and high-speed silicon etcher in an Ar-SF6 plasma; then the etching rate of 8~μ m min-1 is obtained for no bias voltage to the silicon wafer, i.e. for the case that a physical ion etching process is eliminated.

Electron heating and the Electrical Asymmetry Effect in capacitively coupled RF discharges

NASA Astrophysics Data System (ADS)

Schulze, Julian

2011-10-01

For applications of capacitive radio frequency discharges, the control of particle distribution functions at the substrate surface is essential. Their spatio-temporal shape is the result of complex heating mechanisms of the respective species. Enhanced process control, therefore, requires a detailed understanding of the heating dynamics. There are two known modes of discharge operation: α- and γ-mode. In α-mode, most ionization is caused by electron beams generated by the expanding sheaths and field reversals during sheath collapse, while in γ-mode secondary electrons dominate the ionisation. In strongly electronegative discharges, a third heating mode is observed. Due to the low electron density in the discharge center the bulk conductivity is reduced and a high electric field is generated to drive the RF current through the discharge center. In this field, electrons are accelerated and cause significant ionisation in the bulk. This bulk heating mode is observed experimentally and by PIC simulations in CF4 discharges. The electron dynamics and mode transitions as a function of driving voltage and pressure are discussed. Based on a detailed understanding of the heating dynamics, the concept of separate control of the ion mean energy and flux in classical dual-frequency discharges is demonstrated to fail under process relevant conditions. To overcome these limitations of process control, the Electrical Asymmetry Effect (EAE) is proposed in discharges driven at multiple consecutive harmonics with adjustable phase shifts between the driving frequencies. Its concept and a recipe to optimize the driving voltage waveform are introduced. The functionality of the EAE in different gases and first applications to large area solar cell manufacturing are discussed. Finally, limitations caused by the bulk heating in strongly electronegative discharges are outlined.

Review of mixer design for low voltage - low power applications

NASA Astrophysics Data System (ADS)

Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.

2017-09-01

A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogdanova, M. A.; Zyryanov, S. M.; Faculty of Physics, Moscow State University, MSU, Moscow

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtualmore » IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and intensity of low-energy peaks in IED is discussed compared to ion charge-exchange collisions. Obviously, the extrapolation of the “virtual IED sensor” approach to higher pressures requires developing some other sheath models, taking into account both ion and electron collisions and probably including even a model of the whole plasma volume instead of plasma sheath one.« less

Precursor and Neutral Loss Scans in an RF Scanning Linear Quadrupole Ion Trap

NASA Astrophysics Data System (ADS)

Snyder, Dalton T.; Szalwinski, Lucas J.; Schrader, Robert L.; Pirro, Valentina; Hilger, Ryan; Cooks, R. Graham

2018-03-01

Methodology for performing precursor and neutral loss scans in an RF scanning linear quadrupole ion trap is described and compared to the unconventional ac frequency scan technique. In the RF scanning variant, precursor ions are mass selectively excited by a fixed frequency resonance excitation signal at low Mathieu q while the RF amplitude is ramped linearly to pass ions through the point of excitation such that the excited ion's m/z varies linearly with time. Ironically, a nonlinear ac frequency scan is still required for ejection of the product ions since their frequencies vary nonlinearly with the linearly varying RF amplitude. In the case of the precursor scan, the ejection frequency must be scanned so that it is fixed on a product ion m/z throughout the RF scan, whereas in the neutral loss scan, it must be scanned to maintain a constant mass offset from the excited precursor ions. Both simultaneous and sequential permutation scans are possible; only the former are demonstrated here. The scans described are performed on a variety of samples using different ionization sources: protonated amphetamine ions generated by nanoelectrospray ionization (nESI), explosives ionized by low-temperature plasma (LTP), and chemical warfare agent simulants sampled from a surface and analyzed with swab touch spray (TS). We lastly conclude that the ac frequency scan variant of these MS/MS scans is preferred due to electronic simplicity. In an accompanying manuscript, we thus describe the implementation of orthogonal double resonance precursor and neutral loss scans on the Mini 12 using constant RF voltage. [Figure not available: see fulltext.

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Profijt, H. B.; Sanden, M. C. M. van de; Kessels, W. M. M.

2013-01-15

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al{sub 2}O{sub 3}, Co{sub 3}O{sub 4}, and TiO{sub 2}more » thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al{sub 2}O{sub 3} films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.« less

RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

PubMed

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

2015-03-01

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

Fiber optic crossbar switch for automatically patching optical signals

NASA Technical Reports Server (NTRS)

Bell, C. H. (Inventor)

1983-01-01

A system for automatically optically switching fiber optic data signals between a plurality of input optical fibers and selective ones of a plurality of output fibers is described. The system includes optical detectors which are connected to each of the input fibers for converting the optic data signals appearing at the respective input fibers to an RF signal. A plurality of RF to optical signal converters are arranged in rows and columns. The output of each of the optical detectors are each applied to a respective row of optical signal converted for being converters back to an optical signal when the particular optical signal converter is selectively activated by a dc voltage.

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

Voltage control of magnetism in NiZn ferrite/mica/PMNPT heterostructure with giant tunability and narrow linewidth

NASA Astrophysics Data System (ADS)

Wang, Xinjun; Chen, Yunpeng; Chen, Huaihao; Gao, Yuan; He, Yifan; Li, Menghui; Lin, Hwaider; Sun, Neville; Sun, Nian

2018-05-01

Recently, large magnetoelectric coupling of a spinel/piezoelectric heterostructure has been reported. However, the linewidth of the spinel is very large due to lattice mismatch when ferrite is directly deposited on piezoelectric substrates. This indicates a large magnetic loss, which impedes the spinel/piezoelectric heterostructure from useful device applications. Mica is a well-known 2D material, which can be split manually layer by layer without the substrate clamping effect. In this report, NiZn ferrite was deposited on a mica substrate by a spin-spray deposition technique. Spin-spray deposition is a wet chemical synthesis technique involving several chemical reactions for generating high-quality crystalline spinel ferrite films with various compositions directly from an aqueous solution. The thickness of ferrite is 2 μm, and the linewidth of the ferromagnetic resonance (FMR) is 115 Oe which is suitable for RF/microwave devices. The large FMR field tuning of 605 Oe was observed in NiZn ferrite/mica/PMN-PT heterostructures with minimal substrate clamping effect by reducing the thickness of the mica substrate. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for flexible RF magnetic devices.

Digitally synthesized high purity, high-voltage radio frequency drive electronics for mass spectrometry.

PubMed

Schaefer, R T; MacAskill, J A; Mojarradi, M; Chutjian, A; Darrach, M R; Madzunkov, S M; Shortt, B J

2008-09-01

Reported herein is development of a quadrupole mass spectrometer controller (MSC) with integrated radio frequency (rf) power supply and mass spectrometer drive electronics. Advances have been made in terms of the physical size and power consumption of the MSC, while simultaneously making improvements in frequency stability, total harmonic distortion, and spectral purity. The rf power supply portion of the MSC is based on a series-resonant LC tank, where the capacitive load is the mass spectrometer itself, and the inductor is a solenoid or toroid, with various core materials. The MSC drive electronics is based on a field programmable gate array (FPGA), with serial peripheral interface for analog-to-digital and digital-to-analog converter support, and RS232/RS422 communications interfaces. The MSC offers spectral quality comparable to, or exceeding, that of conventional rf power supplies used in commercially available mass spectrometers; and as well an inherent flexibility, via the FPGA implementation, for a variety of tasks that includes proportional-integral derivative closed-loop feedback and control of rf, rf amplitude, and mass spectrometer sensitivity. Also provided are dc offsets and resonant dipole excitation for mass selective accumulation in applications involving quadrupole ion traps; rf phase locking and phase shifting for external loading of a quadrupole ion trap; and multichannel scaling of acquired mass spectra. The functionality of the MSC is task specific, and is easily modified by simply loading FPGA registers or reprogramming FPGA firmware.

A Model-Based Fast Protection System for High-Power RF Tube Amplifiers Used at the European XFEL Accelerator

NASA Astrophysics Data System (ADS)

Butkowski, Łukasz; Vogel, Vladimir; Schlarb, Holger; Szabatin, Jerzy

2017-06-01

The driving engine of the superconducting accelerator of the European X-ray free electron laser (XFEL) is a set of 27 radio frequency (RF) stations. Each of the underground RF stations consists of a multibeam horizontal klystron that can provide up to 10 MW of power at 1.3 GHz. Klystrons are sensitive devices with a limited lifetime and a high mean time between failures. In real operation, the lifetime of the tube can be significantly reduced because of failures. The special fast protection klystron lifetime management (KLM) system has been developed to minimize the influence of service conditions on the lifetime of klystrons. The main task of this system is to detect all events which can destroy the tube as quickly as possible, and switch off the driving RF signal or the high voltage. Detection of events is based on a comparison of the value of the real signal obtained at the system output with the value estimated on the basis of a high-power RF amplifier model and input signals. The KLM system has been realized in field-programmable gate array (FPGA) and implemented in XFEL. Implementation is based on the standard low-level RF micro telecommunications computing architecture (MTCA.4 or xTCA). The main part of the paper focuses on an estimation of the klystron model and the implementation of KLM in FPGA. The results of the performance of the KLM system will also be presented.

A role for high frequency superconducting devices in free space power transmission systems

NASA Technical Reports Server (NTRS)

Christian, Jose L., Jr.; Cull, Ronald C.

1988-01-01

Major advances in space power technology are being made in photovoltaic, solar thermal, and nuclear systems. Despite these advances, the power systems required by the energy and power intensive mission of the future will be massive due to the large collecting surfaces, large thermal management systems, and heavy shielding. Reducing this mass on board the space vehicle can result in significant benefits because of the high cost of transporting and moving mass about in space. An approach to this problem is beaming the power from a point where the massiveness of the power plant is not such a major concern. The viability of such an approach was already investigated. Efficient microwave power beam transmission at 2.45 GHz was demonstrated over short range. Higher frequencies are desired for efficient transmission over several hundred or thousand kilometers in space. Superconducting DC-RF conversion as well as RF-DC conversion offers exciting possibilities. Multivoltage power conditioning for multicavity high power RF tubes could be eliminated since only low voltages are required for Josephson junctions. Small, high efficiency receivers may be possible using the reverse Josephson effects. A conceptual receiving antenna design using superconducting devices to determine possible system operating efficiency is assessed. If realized, these preliminary assessments indicate a role for superconducting devices in millimeter and submillimeter free space power transmission systems.

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

NASA Astrophysics Data System (ADS)

Bilbro, Griff L.; Hou, Danqiong; Yin, Hong; Trew, Robert J.

2009-02-01

We have quantitatively modeled the conduction current and charge storage of an HFET in terms its physical dimensions and material properties. For DC or small-signal RF operation, no adjustable parameters are necessary to predict the terminal characteristics of the device. Linear performance measures such as small-signal gain and input admittance can be predicted directly from the geometric structure and material properties assumed for the device design. We have validated our model at low-frequency against experimental I-V measurements and against two-dimensional device simulations. We discuss our recent extension of our model to include a larger class of electron velocity-field curves. We also discuss the recent reformulation of our model to facilitate its implementation in commercial large-signal high-frequency circuit simulators. Large signal RF operation is more complex. First, the highest CW microwave power is fundamentally bounded by a brief, reversible channel breakdown in each RF cycle. Second, the highest experimental measurements of efficiency, power, or linearity always require harmonic load pull and possibly also harmonic source pull. Presently, our model accounts for these facts with an adjustable breakdown voltage and with adjustable load impedances and source impedances for the fundamental frequency and its harmonics. This has allowed us to validate our model for large signal RF conditions by simultaneously fitting experimental measurements of output power, gain, and power added efficiency of real devices. We show that the resulting model can be used to compare alternative device designs in terms of their large signal performance, such as their output power at 1dB gain compression or their third order intercept points. In addition, the model provides insight into new device physics features enabled by the unprecedented current and voltage levels of AlGaN/GaN HFETs, including non-ohmic resistance in the source access regions and partial depletion of the 2DEG in the drain access region.

Electronic Power Conditioner for Ku-band Travelling Wave Tube

NASA Astrophysics Data System (ADS)

Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

2017-04-01

A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

Strategies for dynamic soft-landing in capacitive microelectromechanical switches

NASA Astrophysics Data System (ADS)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad A.

2011-06-01

Electromechanical dielectric degradation associated with the hard landing of movable electrode is a technology-inhibiting reliability concern for capacitive RF-MEMS switches. In this letter, we propose two schemes for dynamic soft-landing that obviate the need for external feedback circuitry. Instead, the proposed resistive and capacitive braking schemes can reduce impact velocity significantly without compromising other performance characteristics like pull-in voltage and pull-in time. Resistive braking is achieved by inserting a resistance in series with the voltage source whereas capacitive braking requires patterning of the electrode or the dielectric. Our results have important implications to the design and optimization of reliability aware electrostatically actuated MEMS switches.

Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kang, B. S.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2004-02-01

The rf performance of 1 × 200 μm 2 AlGaN/GaN MOS-HEMTs with Sc 2O 3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ˜11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.

Study of the photovoltaic effect in thin film barium titanate

NASA Technical Reports Server (NTRS)

Grannemann, W. W.; Dharmadhikari, V. S.

1982-01-01

Ferroelectric films of barium titanate were synthesized on silicon and quartz substrates, and the photoelectric effect in the structure consisting of metal deposited ferroelectric barium titanate film silicon was studied. A photovoltage with polarity that depends on the direction of the remanent polarization was observed. The deposition of BaTiO3 on silicon and fused quartz substrates was accomplished by an rf sputtering technique. A series of experiments to study the growth of ferroelectric BaTiO3 films on single crystal silicon and fused quartz substrates were conducted. The ferroelectric character in these films was found on the basis of evidence from the polarization electric field hysteresis loops, capacitance voltage and capacitance temperature techniques and from X-ray diffraction studies.

Conditioning of high voltage radio frequency cavities by using fuzzy logic in connection with rule based programming

NASA Astrophysics Data System (ADS)

Perreard, S.; Wildner, E.

1994-12-01

Many processes are controlled by experts using some kind of mental model to decide on actions and make conclusions. This model, based on heuristic knowledge, can often be represented by rules and does not have to be particularly accurate. Such is the case for the problem of conditioning high voltage RF cavities; the expert has to decide, by observing some criteria, whether to increase or to decrease the voltage and by how much. A program has been implemented which can be applied to a class of similar problems. The kernel of the program is a small rule base, which is independent of the kind of cavity. To model a specific cavity, we use fuzzy logic which is implemented as a separate routine called by the rule base, to translate from numeric to symbolic information.

The interaction of the near-field plasma with antennas used in magnetic fusion research

NASA Astrophysics Data System (ADS)

Caughman, John

2015-09-01

Plasma heating and current drive using antennas in the Ion Cyclotron Range of Frequencies (ICRF) are important elements for the success of magnetic fusion. The antennas must operate in a harsh environment, where local plasma densities can be >1018/m3, magnetic fields can range from 0.2-5 Tesla, and antenna operating voltages can be >40 kV. This environment creates operational issues due to the interaction of the near-field of the antenna with the local plasma. In addition to parasitic losses in this plasma region, voltage and current distributions on the antenna structure lead to the formation of high electric fields and RF plasma sheaths, which can lead to enhanced particle and energy fluxes on the antenna and on surfaces intersected by magnetic field lines connected to or passing near the antenna. These issues are being studied using a simple electrode structure and a single-strap antenna on the Prototype Materials Plasma EXperiment (Proto-MPEX) at ORNL, which is a linear plasma device that uses an electron Bernstein wave heated helicon plasma source to create a high-density plasma suitable for use in a plasma-material interaction test stand. Several diagnostics are being used to characterize the near-field interactions, including double-Langmuir probes, a retarding field energy analyzer, and optical emission spectroscopy. The RF electric field is being studied utilizing Dynamic Stark Effect spectroscopy and Doppler-Free Saturation Spectroscopy. Recent experimental results and future plans will be presented. ORNL is managed by UT-Battelle, LLC, for the U.S. DOE under Contract DE-AC-05-00OR22725.

Comparison of three rf plasma impedance monitors on a high phase angle planar inductively coupled plasma source

NASA Astrophysics Data System (ADS)

Uchiyama, H.; Watanabe, M.; Shaw, D. M.; Bahia, J. E.; Collins, G. J.

1999-10-01

Accurate measurement of plasma source impedance is important for verification of plasma circuit models, as well as for plasma process characterization and endpoint detection. Most impedance measurement techniques depend in some manner on the cosine of the phase angle to determine the impedance of the plasma load. Inductively coupled plasmas are generally highly inductive, with the phase angle between the applied rf voltage and the rf current in the range of 88 to near 90 degrees. A small measurement error in this phase angle range results in a large error in the calculated cosine of the angle, introducing large impedance measurement variations. In this work, we have compared the measured impedance of a planar inductively coupled plasma using three commercial plasma impedance monitors (ENI V/I probe, Advanced Energy RFZ60 and Advanced Energy Z-Scan). The plasma impedance is independently verified using a specially designed match network and a calibrated load, representing the plasma, to provide a measurement standard.

Status and operation of the Linac4 ion source prototypes

NASA Astrophysics Data System (ADS)

Lettry, J.; Aguglia, D.; Andersson, P.; Bertolo, S.; Butterworth, A.; Coutron, Y.; Dallocchio, A.; Chaudet, E.; Gil-Flores, J.; Guida, R.; Hansen, J.; Hatayama, A.; Koszar, I.; Mahner, E.; Mastrostefano, C.; Mathot, S.; Mattei, S.; Midttun, Ø.; Moyret, P.; Nisbet, D.; Nishida, K.; O'Neil, M.; Ohta, M.; Paoluzzi, M.; Pasquino, C.; Pereira, H.; Rochez, J.; Sanchez Alvarez, J.; Sanchez Arias, J.; Scrivens, R.; Shibata, T.; Steyaert, D.; Thaus, N.; Yamamoto, T.

2014-02-01

CERN's Linac4 45 kV H- ion sources prototypes are installed at a dedicated ion source test stand and in the Linac4 tunnel. The operation of the pulsed hydrogen injection, RF sustained plasma, and pulsed high voltages are described. The first experimental results of two prototypes relying on 2 MHz RF-plasma heating are presented. The plasma is ignited via capacitive coupling, and sustained by inductive coupling. The light emitted from the plasma is collected by viewports pointing to the plasma chamber wall in the middle of the RF solenoid and to the plasma chamber axis. Preliminary measurements of optical emission spectroscopy and photometry of the plasma have been performed. The design of a cesiated ion source is presented. The volume source has produced a 45 keV H- beam of 16-22 mA which has successfully been used for the commissioning of the Low Energy Beam Transport (LEBT), Radio Frequency Quadrupole (RFQ) accelerator, and chopper of Linac4.

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Operational Characteristics of a Low-Energy FARAD Thruster

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Rose, M. Frank; Miller, Robert

2008-01-01

Data from a 100 J per pulse electrodeless accelerator employing pulsed RF-preionization are presented to gain insight into the accelerator's operating characteristics. The data suggest that the propellant distribution is highly unoptimized, with most of the gas inaccessible to the discharge and the remainder mostly concentrated at the inner radius of the coil. The pulsed RF-preionization discharge produces a visible plasma, but like the gas distribution it mostly appears concentrated at the inner radius of the thruster. Magnetic field probes in the discharge point to a current sheet that is not magnetically impermeable. These data also exhibit signs of nonrepeatability, and time-integrated discharge photography shows signs of spatial nonuniformity in both the radial and azimuthal directions. Terminal voltage measurements on the two capacitor banks of the thruster do not exhibit the asymmetric nature (in time) typically associated with an efficient pulsed plasma accelerator. Based on the experimental evidence, the poor performance of the thruster is thought to be due to insufficient preionization, which at these low discharge energy levels severely limits the ability of the main current pulse to couple with and effectively accelerate the propellant.

Time-dependent, multimode interaction analysis of the gyroklystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swati, M. V., E-mail: swati.mv.ece10@iitbhu.ac.in; Chauhan, M. S.; Jain, P. K.

2016-08-15

In this paper, a time-dependent multimode nonlinear analysis for the gyroklystron amplifier has been developed by extending the analysis of gyrotron oscillators by employing the self-consistent approach. The nonlinear analysis developed here has been validated by taking into account the reported experimental results for a 32.3 GHz, three cavity, second harmonic gyroklystron operating in the TE{sub 02} mode. The analysis has been used to estimate the temporal RF growth in the operating mode as well as the nearby competing modes. Device gain and bandwidth have been computed for different drive powers and frequencies. The effect of various beam parameters, such asmore » beam voltage, beam current, and pitch factor, has also been studied. The computational results have estimated the gyroklystron saturated RF power ∼319 kW at 32.3 GHz with efficiency ∼23% and gain ∼26.3 dB with device bandwidth ∼0.027% (8 MHz) for a 70 kV, 20 A electron beam. The computed results are found to be in agreement with the experimental values within 10%.« less

Extended linear ion trap frequency standard apparatus

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor)

1995-01-01

A linear ion trap for frequency standard applications is provided with a plurality of trapping rods equally spaced and applied quadruple rf voltages for radial confinement of atomic ions and biased level pins at each end for axial confinement of the ions. The trapping rods are divided into two linear ion trap regions by a gap in each rod in a common radial plane to provide dc discontinuity, thus dc isolating one region from the other. A first region for ion-loading and preparation fluorescence is biased with a dc voltage to transport ions into a second region for resonance frequency comparison with a local oscillator derived frequency while the second region is held at zero voltage. The dc bias voltage of the regions is reversed for transporting the ions back into the first region for fluorescence measurement. The dual mode cycle is repeated continuously for comparison and feedback control of the local oscillator derived frequency. Only the second region requires magnetic shielding for the resonance function which is sensitive to any ambient magnetic fields.

Miniaturized magnet-less RF electron trap. II. Experimental verification

DOE PAGES

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.; ...

2017-06-15

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Slip-stacking Dynamics for High-Power Proton Beams at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldred, Jeffrey Scott

Slip-stacking is a particle accelerator configuration used to store two particle beams with different momenta in the same ring. The two beams are longitudinally focused by two radiofrequency (RF) cavities with a small frequency difference between them. Each beam is synchronized to one RF cavity and perturbed by the other RF cavity. Fermilab uses slip-stacking in the Recycler so as to double the power of the 120 GeV proton beam in the Main Injector. This dissertation investigates the dynamics of slip-stacking beams analytically, numerically and experimentally. In the analytic analysis, I find the general trajectory of stable slip-stacking particles andmore » identify the slip-stacking parametric resonances. In the numerical analysis, I characterize the stable phase-space area and model the particle losses. In particular, I evaluate the impact of upgrading the Fermilab Booster cycle-rate from 15 Hz to 20 Hz as part of the Proton Improvement Plan II (PIP-II). The experimental analysis is used to verify my approach to simulating slip-stacking loss. I design a study for measuring losses from the longitudinal single-particle dynamics of slip-stacking as a function of RF cavity voltage and RF frequency separation. I further propose the installation of a harmonic RF cavity and study the dynamics of this novel slip-stacking configuration. I show the harmonic RF cavity cancels out parametric resonances in slip-stacking, reduces emittance growth during slip-stacking, and dramatically enhances the stable phase-space area. The harmonic cavity is expected to reduce slip-stacking losses to far exceed PIP-II requirements. These results raise the possibility of extending slip-stacking beyond the PIP-II era.« less

Characterization of Traveling Wave Ion Mobility Separations in Structures for Lossless Ion Manipulations

DOE PAGES

Hamid, Ahmed M.; Ibrahim, Yehia M.; Garimella, Venkata BS; ...

2015-10-28

We report on the development and characterization of a new traveling wave-based Structure for Lossless Ion Manipulations (TW-SLIM) for ion mobility separations (IMS). The TW-SLIM module uses parallel arrays of rf electrodes on two closely spaced surfaces for ion confinement, where the rf electrodes are separated by arrays of short electrodes, and using these TWs can be created to drive ion motion. In this initial work, TWs are created by the dynamic application of dc potentials. The capabilities of the TW-SLIM module for efficient ion confinement, lossless ion transport, and ion mobility separations at different rf and TW parameters aremore » reported. The TW-SLIM module is shown to transmit a wide mass range of ions (m/z 200–2500) utilizing a confining rf waveform (~1 MHz and ~300 V p-p) and low TW amplitudes (<20 V). Additionally, the short TW-SLIM module achieved resolutions comparable to existing commercially available low pressure IMS platforms and an ion mobility peak capacity of ~32 for TW speeds of <210 m/s. TW-SLIM performance was characterized over a wide range of rf and TW parameters and demonstrated robust performance. In conclusion, the combined attributes of the flexible design and low voltage requirements for the TW-SLIM module provide a basis for devices capable of much higher resolution and more complex ion manipulations.« less

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

NASA Astrophysics Data System (ADS)

Iannacci, J.; Tschoban, C.

2017-04-01

RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  -10 dB to  -60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3-5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed.

Single-chip fully integrated direct-modulation CMOS RF transmitters for short-range wireless applications.

PubMed

El-Desouki, Munir M; Qasim, Syed Manzoor; BenSaleh, Mohammed; Deen, M Jamal

2013-08-02

Ultra-low power radio frequency (RF) transceivers used in short-range application such as wireless sensor networks (WSNs) require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs) in addition to a 2.0 GHz phase-locked loop (PLL) based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of -122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of -120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

PubMed

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Characterization of Traveling Wave Ion Mobility Separations in Structures for Lossless Ion Manipulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamid, Ahmed M.; Ibrahim, Yehia M.; Garimella, Venkata BS

We report on the development and characterization of a new traveling wave-based Structure for Lossless Ion Manipulations (TW-SLIM) for ion mobility separations (IMS). The TW-SLIM module uses parallel arrays of rf electrodes on two closely spaced surfaces for ion confinement, where the rf electrodes are separated by arrays of short electrodes, and using these TWs can be created to drive ion motion. In this initial work, TWs are created by the dynamic application of dc potentials. The capabilities of the TW-SLIM module for efficient ion confinement, lossless ion transport, and ion mobility separations at different rf and TW parameters aremore » reported. The TW-SLIM module is shown to transmit a wide mass range of ions (m/z 200–2500) utilizing a confining rf waveform (~1 MHz and ~300 V p-p) and low TW amplitudes (<20 V). Additionally, the short TW-SLIM module achieved resolutions comparable to existing commercially available low pressure IMS platforms and an ion mobility peak capacity of ~32 for TW speeds of <210 m/s. TW-SLIM performance was characterized over a wide range of rf and TW parameters and demonstrated robust performance. In conclusion, the combined attributes of the flexible design and low voltage requirements for the TW-SLIM module provide a basis for devices capable of much higher resolution and more complex ion manipulations.« less

Design, Fabrication and Testing of Tunable RF Meta-atoms

DTIC Science & Technology

2012-06-14

Simple cantilever beam with actuation pad covered with a thin dielectric layer for short circuit protection...Cantilever actuation simulated with CoventorWare ® to determine the biasing voltage necessary to draw the cantilevers to the actuation pads ...Capacitive tunable meta-atom fabricated on quartz substrate. The meta-atom had to be cut at the metal trace leading to the cantilever actuation pads

An all-solid-state CO2 laser driver

NASA Astrophysics Data System (ADS)

Birx, Daniel

1991-03-01

New, all-solid-state pulse generators are described which meet military requirements for an efficient, reliable pulsed power source to drive a space based CO2 laser. These SCR-commutated, nonlinear magnetic pulse compressors are fully-compatible with the present Spectra Technologies laser head design planned for use on LOWKATER. By employing SCRs rather than thyratron commutators, these pulsers should provide a significant increase in reliability over the current generation of pulsed power drivers. The first pulser which was designed and constructed was denoted COLD-I. COLD-I was designed to meet the original LOWKATER specifications and delivered at 150 joule, 20 kV pulse into a laser load at 10 to 20 Hz repetition rate. The second pulser, denoted COLD-II, was designed to provide a 45 joule, 500 nsec duration pulse at a voltage of 20 kV and a repetition rate of 1 kHz peak and 50 to 100 Hz average. The electrical efficiency was measured to be 80 percent with an input drive of 500 VDC. This pulse served as a design verification testbed for a third pulser, presently designed but not constructed and denoted COLD-III. COLD-III would be capable of producing 36 joules at the same pulse length and repetition rate at voltages of 20 kV. The Phase-II effort was a high risk, high payoff effort aimed at developing a light weight, high reliability RF power source for advanced RF CO2 laser heads under development. COLD-IV a Branched Magnetic RF Nonlinear Magnetic Pulse Compressor was built as a bread

Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films

NASA Technical Reports Server (NTRS)

Steinmann, Pierre A.; Spalvins, Talivaldis

1990-01-01

By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.

Large Area CVD MoS2 RF transistors with GHz performance

NASA Astrophysics Data System (ADS)

Nagavalli Yogeesh, Maruthi; Sanne, Atresh; Park, Saungeun; Akinwade, Deji; Banerjee, Sanjay

Molybdenum disulfide (MoS2) is a 2D semiconductor in the family of transition metal dichalcogenides (TMDs). Its single layer direct bandgap of 1.8 eV allows for high ION/IOFF metal-oxide semiconducting field-effect transistors (FETs). More relevant for radio frequency (RF) wireless applications, theoretical studies predict MoS2 to have saturation velocities, vsat >3×106 cm/s. Facilitated by cm-scale CVD MoS2, here we design and fabricate both top-gated and embedded gate short channel MoS2 RF transistors, and provide a systematic comparison of channel length scaling, extrinsic doping from oxygen-deficient dielectrics, and a gate-first gate-last process flow. The intrinsic fT (fmax) obtained from the embedded gate transistors shows 3X (2X) improvement over top-gated CVD MoS2 RF FETs, and the largest high-field saturation velocity, vsat = 1.88 ×106 cm/s, in MoS2 reported so far. The gate-first approach, offers enhancement mode operation, ION/IOFF ratio of 10, 8< and the highest reported transconductance (gm) of 70 μS/ μm. By manipulating the interfacial oxygen vacancies in atomic layer deposited (ALD) HfO2-x we are able to achieve 2X current density over stoichiometric Al2O3. We demonstrate a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Electrokinetic actuation of liquid metal for reconfigurable radio frequency devices

NASA Astrophysics Data System (ADS)

Gough, Ryan C.

Liquid metals are an attractive material choice for designers wishing to combine the advantages of metals, such as high electrical conductivity, thermal conductivity, and reflectivity, with the inherently dynamic nature of fluids. Liquid metals have been utilized for a wide variety of applications, but their high electrical conductivity, surface smoothness, and linear response makes them especially attractive as tuning elements within reconfigurable radio frequency (RF) devices. The recent introduction of non-toxic liquid metal alloys onto the commercial market has further fueled interest in this versatile material. Early experiments with liquid metal as an RF tuning element have yielded promising results, but have largely depended on externally applied pressure to actuate the liquid metal. For commercial implementation this would necessitate the use of clunky and inefficient micro-pumps, which can require both high voltages and high power consumption. This reliance on hydraulic pumping has been a significant barrier to the incorporation of liquid metal as an RF tuning element in applications outside of a laboratory setting. Here, several electrical actuation techniques are demonstrated that allow for the rapid and repeatable actuation of non-toxic gallium alloys as tuning elements within reconfigurable RF devices. These techniques leverage the naturally high surface tension of liquid metals, as well as the unique electrochemistry of gallium-based alloys, to exercise wide-ranging and high fidelity control over both the metal's shape and position. Furthermore, this control is exercised with voltage and power levels that are each better than an order of magnitude below that achievable with conventional micro-pumps. This control does not require the constant application of actuation signals in order to maintain an actuated state, and can even be 'self-actuated', with the liquid metal supplying its own kinetic energy via the electrochemical conversion of its native oxide layer. Several proof-of-concept devices are designed and tested to demonstrate the effectiveness of these electrical actuation techniques. A pair of tunable slot antennas are presented that achieve frequency reconfigurability through different implementations of liquid metal tuning elements - the first uses liquid metal as a dynamic short-circuit boundary condition for the magnetic current within the resonant aperture, and the second as a variable-length transmission stub that adds and removes reactance from the antenna. The two antennas are tunable across effective bandwidths of 19% and 15%, respectively. In addition, a tunable bandpass filter is demonstrated in which a central liquid-metal resonant element is 'stretched' to lower the passband of the filter by 10% without impacting the insertion loss. Finally, it is demonstrated how liquid metal can be formed into arbitrary shapes at high speeds (approximately 2.5 cm/s) without the need for an external power supply.

Observation of Quartz Cathode-Luminescence in a Low Pressure Plasma Discharge

NASA Technical Reports Server (NTRS)

Foster, John E.

2004-01-01

Intense, steady-state cathode-luminescence has been observed from exposure of quartz powder to a low pressure rf-excited argon plasma discharge. The emission spectra (400 to 850 nm) associated with the powder luminescence were documented as a function of bias voltage using a spectrometer. The emission was broad-band, essentially washing out the line spectra features of the argon plasma discharge.

Ion manipulation method and device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Gordon A.; Baker, Erin M.; Smith, Richard D.

2017-11-07

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electricmore » field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.« less

Ion manipulation device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Gordon A.; Baker, Erin M.; Smith, Richard D.

2018-05-08

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electricmore » field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.« less

Phase stabilization for mode locked lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baer, M.T.

A method is described for stabilizing a phase relationship between two mode locked lasers, comprising: driving through a power splitter the mode lockers of both lasers from a single stable radio frequency source; monitoring the phase of pulses from each laser utilizing a fast photodiode output of each laser; feeding the output of the fast photodiodes to a phase detector and comparator; measuring a relative phase difference between the lasers with a phase detector and comparator, producing a voltage output signal or phase error signal representing the phase difference; amplifying and filtering the voltage output signal with an amplifier andmore » loop filter; feeding the resulting output signal to a voltage controlled phase delay between the power splitter and one of the lasers; and delaying the RF drive to the one laser to achieve a desired phase relationship, between the two lasers.« less

Radio Frequency Transistors and Circuits Based on CVD MoS2.

PubMed

Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

2015-08-12

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Full-wave receiver architecture for the homodyne motion sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haugen, Peter C.; Dallum, Gregory E.; Welsh, Patrick A.

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting ofmore » a RF signal received at the receiver input, thereby enhancing receiver sensitivity.« less

Experimental and simulational result multipactors in 112 MHz QWR injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xin, T.; Ben-Zvi, I.; Belomestnykh, S.

2015-05-03

The first RF commissioning of 112 MHz QWR superconducting electron gun was done in late 2014. The coaxial Fundamental Power Coupler (FPC) and Cathode Stalk (stalk) were installed and tested for the first time. During this experiment, we observed several multipacting barriers at different gun voltage levels. The simulation work was done within the same range. The comparison between the experimental observation and the simulation results are presented in this paper. The observations during the test are consisted with the simulation predictions. We were able to overcome most of the multipacting barriers and reach 1.8 MV gun voltage under pulsedmore » mode after several round of conditioning processes.« less

Full-wave receiver architecture for the homodyne motion sensor

DOEpatents

Haugen, Peter C; Dallum, Gregory E; Welsh, Patrick A; Romero, Carlos E

2013-11-19

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting of a RF signal received at the receiver input, thereby enhancing receiver sensitivity.

A millimeter wave Josephson mixer employing a high-T(c) GdBaCuO point contact

NASA Technical Reports Server (NTRS)

Olsson, H. K.; Claeson, T.; Eriksson, S.; Johansson, L.-G.; Mcgrath, W. R.

1987-01-01

A Josephson effect heterodyne mixer for the millimeter wave band was investigated employing high-T(c) GdBaCuO point contacts. Mixer performance was in qualitative agreement with theory. A mixing response was observed up to 55 K, the highest operating temperature achieved for such a device to date. The voltage separation of RF-induced steps gave a value of h/2e = 2.08 x 10 to the -15th V s, which is in excellent agreement with the value expected for Cooper pairs. In addition, the temperature dependence of the I(0)R product was found to agree with Bardeen-Cooper-Schrieffer theory in the weak coupling limit.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

PubMed

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Research Update: Spin transfer torques in permalloy on monolayer MoS 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Sklenar, Joseph; Hsu, Bo

2016-03-01

We observe current induced spin transfer torque resonance in permalloy (Py) grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

Research update: Spin transfer torques in permalloy on monolayer MoS 2

DOE PAGES

Zhang, Wei; Sklenar, Joseph; Hsu, Bo; ...

2016-03-03

We observe current induced spin transfertorque resonance in permalloy (Py) grown on monolayer MoS 2. By passing rf current through the Py/MoS 2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS 2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Furthermore, our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

Investigation of Parallel Radiofrequency Transmission for the Reduction of Heating in Long Conductive Leads in 3 Tesla Magnetic Resonance Imaging

PubMed Central

McElcheran, Clare E.; Yang, Benson; Anderson, Kevan J. T.; Golenstani-Rad, Laleh; Graham, Simon J.

2015-01-01

Deep Brain Stimulation (DBS) is increasingly used to treat a variety of brain diseases by sending electrical impulses to deep brain nuclei through long, electrically conductive leads. Magnetic resonance imaging (MRI) of patients pre- and post-implantation is desirable to target and position the implant, to evaluate possible side-effects and to examine DBS patients who have other health conditions. Although MRI is the preferred modality for pre-operative planning, MRI post-implantation is limited due to the risk of high local power deposition, and therefore tissue heating, at the tip of the lead. The localized power deposition arises from currents induced in the leads caused by coupling with the radiofrequency (RF) transmission field during imaging. In the present work, parallel RF transmission (pTx) is used to tailor the RF electric field to suppress coupling effects. Electromagnetic simulations were performed for three pTx coil configurations with 2, 4, and 8-elements, respectively. Optimal input voltages to minimize coupling, while maintaining RF magnetic field homogeneity, were determined for all configurations using a Nelder-Mead optimization algorithm. Resulting electric and magnetic fields were compared to that of a 16-rung birdcage coil. Experimental validation was performed with a custom-built 4-element pTx coil. In simulation, 95-99% reduction of the electric field at the tip of the lead was observed between the various pTx coil configurations and the birdcage coil. Maximal reduction in E-field was obtained with the 8-element pTx coil. Magnetic field homogeneity was comparable to the birdcage coil for the 4- and 8-element pTx configurations. In experiment, a temperature increase of 2±0.15°C was observed at the tip of the wire using the birdcage coil, whereas negligible increase (0.2±0.15°C) was observed with the optimized pTx system. Although further research is required, these initial results suggest that the concept of optimizing pTx to reduce DBS heating effects holds considerable promise. PMID:26237218

Investigation of Parallel Radiofrequency Transmission for the Reduction of Heating in Long Conductive Leads in 3 Tesla Magnetic Resonance Imaging.

PubMed

McElcheran, Clare E; Yang, Benson; Anderson, Kevan J T; Golenstani-Rad, Laleh; Graham, Simon J

2015-01-01

Deep Brain Stimulation (DBS) is increasingly used to treat a variety of brain diseases by sending electrical impulses to deep brain nuclei through long, electrically conductive leads. Magnetic resonance imaging (MRI) of patients pre- and post-implantation is desirable to target and position the implant, to evaluate possible side-effects and to examine DBS patients who have other health conditions. Although MRI is the preferred modality for pre-operative planning, MRI post-implantation is limited due to the risk of high local power deposition, and therefore tissue heating, at the tip of the lead. The localized power deposition arises from currents induced in the leads caused by coupling with the radiofrequency (RF) transmission field during imaging. In the present work, parallel RF transmission (pTx) is used to tailor the RF electric field to suppress coupling effects. Electromagnetic simulations were performed for three pTx coil configurations with 2, 4, and 8-elements, respectively. Optimal input voltages to minimize coupling, while maintaining RF magnetic field homogeneity, were determined for all configurations using a Nelder-Mead optimization algorithm. Resulting electric and magnetic fields were compared to that of a 16-rung birdcage coil. Experimental validation was performed with a custom-built 4-element pTx coil. In simulation, 95-99% reduction of the electric field at the tip of the lead was observed between the various pTx coil configurations and the birdcage coil. Maximal reduction in E-field was obtained with the 8-element pTx coil. Magnetic field homogeneity was comparable to the birdcage coil for the 4- and 8-element pTx configurations. In experiment, a temperature increase of 2±0.15°C was observed at the tip of the wire using the birdcage coil, whereas negligible increase (0.2±0.15°C) was observed with the optimized pTx system. Although further research is required, these initial results suggest that the concept of optimizing pTx to reduce DBS heating effects holds considerable promise.

Parallel Radiofrequency Transmission for the Reduction of Heating in Deep Brain Stimulation Leads at 3T

NASA Astrophysics Data System (ADS)

McElcheran, Clare

Deep Brain Stimulation (DBS) is increasingly used to treat a variety of brain diseases by sending electrical impulses to deep brain nuclei through long, electrically conductive leads. Magnetic resonance imaging (MRI) of patients pre- and post-implantation is desirable to target and position the implant, to evaluate possible side-effects and to examine DBS patients who have other health conditions. Although MRI is the preferred modality for pre-operative planning, MRI post-implantation is limited due to the risk of high local power deposition, and therefore tissue heating, at the tip of the lead. The localized power deposition arises from currents induced in the leads caused by coupling with the radiofrequency (RF) transmission field during imaging. In this thesis, parallel RF transmission (pTx) is used to tailor the RF electric field to suppress coupling effects. Three pTx coil configurations with 2-elements, 4-elements, and 8-elements, respectively, were investigated. Optimal input voltages to minimize coupling, while maintaining RF magnetic field homogeneity, were determined using a Nelder-Mead optimization algorithm. Resulting electric and magnetic fields were compared to that of a 16-rung birdcage coil. Experimental validation was performed with a custom-built 4-element pTx coil. Three cases were investigated to develop and evaluate this technique. First, a Proof-of-Concept study was performed to investigate the case of a simple, uniform cylindrical phantom with a straight, perfectly conducting wire. Second, a heterogeneous subject with bilateral, curved implanted wires was investigated. Finally, the third case investigated realistic patient lead-trajectories obtained from intra-operative CT scans. In all three cases, specific absorption rate (SAR), a metric used to quantify power deposition which results in heating, was reduced by over 90%. Maximal reduction in SAR was obtained with the 8-element pTx coil. Magnetic field homogeneity was comparable to the birdcage coil for the 4- and 8-element pTx configurations. Although further research is required before clinical implementation, these initial results suggest that the concept of optimizing pTx to reduce DBS heating effects holds considerable promise.

Simulation Model of A Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry W. (Technical Monitor)

2002-01-01

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

Method of making radio frequency ion source antenna

DOEpatents

Ehlers, Kenneth W.; Leung, Ka-Ngo

1988-01-01

In the method, the radio frequency (RF) antenna is made by providing a clean coil made of copper tubing or other metal conductor, which is coated with a tacky organic binder, and then with a powdered glass frit, as by sprinkling the frit uniformly over the binder. The coil is then heated internally in an inert gas atmosphere, preferably by passing an electrical heating current along the coil. Initially, the coil is internally heated to about 200.degree. C. to boil off the water from the binder, and then to about 750.degree. C.-850.degree. C. to melt the glass frit, while also burning off the organic binder. The melted frit forms a molten glass coating on the metal coil, which is then cooled to solidify the glass, so that the metal coil is covered with a thin continuous homogeneous impervious glass coating of substantially uniform thickness. The glass coating affords complete electrical insulation and complete dielectric protection for the metal coil of the RF antenna, to withstand voltage breakdown and to prevent sputtering, while also doubling the plasma generating efficiency of the RF antenna, when energized with RF power in the vacuum chamber of an ion source for a particle accelerator or the like. The glass frit preferably contains apprxoimately 45% lead oxide.

Method of making radio frequency ion source antenna and such antenna

DOEpatents

Ehlers, K.W.; Leung, K.N.

1985-05-22

In the method, the radio frequency (rf) antenna is made by providing a clean coil made of copper tubing or other metal conductor, which is coated with a tacky organic binder, and then with a powdered glass frit, as by sprinkling the frit uniformly over the binder. The coil is then heated internally in an inert gas atmosphere, preferably by passing an electrical heating current along the coil. Initially, the coil is internally heated to about 200/sup 0/C to boil off the water from the binder, and then to about 750 to 850/sup 0/C to melt the glass frit, while also burning off the organic binder. The melted frit forms a molten glass coating on the metal coil, which is then cooled to solidify the glass, so that the metal coil is covered with a thin continuous homogeneous impervious glass coating of substantially uniform thickness. The glass coating affords complete electrical insulation and complete dielectric protection for the metal coil of the rf antenna, to withstand voltage breakdown and to prevent sputtering, while also doubling the plasma generating efficiency of the rf antenna, when energized with RF power in the vacuum chamber of an ion source for a particle accelerator or the like. The glass frit preferably contains approximately 45% lead oxide.

Mitigation of multipacting, enhanced by gas condensation on the high power input coupler of a superconducting RF module, by comprehensive warm aging

NASA Astrophysics Data System (ADS)

Wang, Chaoen; Chang, Lung-Hai; Chang, Mei-Hsia; Chen, Ling-Jhen; Chung, Fu-Tsai; Lin, Ming-Chyuan; Liu, Zong-Kai; Lo, Chih-Hung; Tsai, Chi-Lin; Yeh, Meng-Shu; Yu, Tsung-Chi

2017-11-01

Excitation of multipacting, enhanced by gas condensation on cold surfaces of the high power input coupler in a SRF module poses the highest challenge for reliable SRF operation under high average RF power. This could prevent the light source SRF module from being operated with a desired high beam current. Off-line long-term reliability tests have been conducted for the newly constructed 500-MHz SRF KEKB type modules at an accelerating RF voltage of 1.6-MV to enable prediction of their operational reliability in the 3-GeV Taiwan Photon Source (TPS), since prediction from mere production performance by conventional horizontal test is presently unreliable. As expected, operational difficulties resulting from multipacting, enhanced by gas condensation, have been identified in the course of long-term reliability test. Our present hypothesis is that gas condensation can be slowed down by preserving the vacuum pressure at the power coupler close to that reached just after its cool down to liquid helium temperatures. This is achievable by reduction of the power coupler out-gassing rate through comprehensive warm aging. Its feasibility and effectiveness has been experimentally verified in a second long term reliability test. Our success opens the possibility to operate the SRF module free of multipacting trouble and opens a new direction to improve the operational performance of next generation SRF modules in light sources with high beam currents.

Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

NASA Astrophysics Data System (ADS)

Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

2017-12-01

Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

Design of a high particle flux hydrogen helicon plasma source for used in plasma materials interaction studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goulding, R. H.; Chen, G.; Meitner, S.

2009-11-26

Existing linear plasma materials interaction (PMI) facilities all use plasma sources with internal electrodes. An rf-based helicon source is of interest because high plasma densities can be generated with no internal electrodes, allowing true steady state operation with minimal impurity generation. Work has begun at Oak Ridge National Laboratory (ORNL) to develop a large (15 cm) diameter helicon source producing hydrogen plasmas with parameters suitable for use in a linear PMI device: n{sub e}{>=}10{sup 19} m{sup -3}, T{sub e} = 4-10 eV, particle flux {gamma}{sub p}>10{sup 23}m{sup -3} s{sup -1}, and magnetic field strength |B| up to 1 T inmore » the source region. The device, whose design is based on a previous hydrogen helicon source operated at ORNL[1], will operate at rf frequencies in the range 10-26 MHz, and power levels up to {approx}100 kW. Limitations in cooling will prevent operation for pulses longer than several seconds, but a major goal will be the measurement of power deposition on device structures so that a later steady state version can be designed. The device design, the diagnostics to be used, and results of rf modeling of the device will be discussed. These include calculations of plasma loading, resulting currents and voltages in antenna structures and the matching network, power deposition profiles, and the effect of high |B| operation on power absorption.« less

RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

NASA Astrophysics Data System (ADS)

Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

2014-10-01

Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

L-Band High Power Amplifiers for CEBAF Linac

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fugitt, Jock; Killion, Richard; Nelson, Richard

1990-09-01

The high power portion of the CEBAF RF system utilizes 340 5kW klystrons providing 339 separately controlled outputs. Modulating anodes have been included in the klystron design to provide for economically efficient operation. The design includes shunt regulator-type modulating anode power supplies running from the cathode power supply, and switching filament power supplies. Remotely programmable filament voltage allows maximum cathode life to be realized. Klystron operating setpoint and fast klystron protection logic are provided by individual external CEBAF RF control modules. A single cathode power supply powers a block of eight klystrons. The design includes circulators and custom extrusion andmore » hybrid waveguide components which have allowed reduced physical size and lower cost in the design of the WR-650 waveguide transmission system.« less

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

PubMed Central

Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

2017-01-01

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec. PMID:28672868

Fast ferroelectric phase shifters for energy recovery linacs

DOE PAGES

Kazakov, S. Yu; Shchelkunov, S. V.; Yakovlev, V. P.; ...

2010-11-24

Fast phase shifters are described that use a novel barium strontium titanate ceramic that can rapidly change its dielectric constant as an external bias voltage is changed. These phase shifters promise to reduce by ~10 times the power requirements for the rf source needed to drive an energy recovery linac (ERL). Such phase shifters will be coupled with superconducting radiofrequency cavities so as to tune them to compensate for phase instabilities, whether beam-driven or those caused by microphonics. The most promising design is presented, which was successfully cold tested and demonstrated a switching speed of ~30 ns for 77 deg, correspondingmore » to < 0.5 ns per deg of rf phase. As a result, other crucial issues (losses, phase shift values, etc.) are discussed.« less

Bias current dependence of resistivity in Co0.4Fe0.4B0.2 ultrathin film prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Mandal, Snehal; Mazumdar, Dipak; Das, I.

2018-04-01

Ultrathin film of Co0.4Fe0.4B0.2 was prepared on p-type Si (100) substrate by RF magnetron sputtering. X-Ray Reflectivity and Atomic Force Microscopy measurements were performed to estimate the thickness and surface roughness of the film. Electrical transport measurements were performed by four-probe method in a current-in-plane (CIP) geometry. Presence of non-linearity in the current-voltage (I-V) characteristics was observed at higher current range. The electrical resistivity was found to change by several orders of magnitude (105) by changing the bias current from nano-ampere (nA) to milli-ampere (mA) range. This bias current dependence of the resistivity has been explained by different transport mechanisms.

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

PubMed

Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

2017-06-26

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

PubMed Central

Chen, Kai-Huang; Tsai, Tsung-Ming; Cheng, Chien-Min; Huang, Shou-Jen; Chang, Kuan-Chang; Liang, Shu-Ping; Young, Tai-Fa

2017-01-01

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model. PMID:29283368

High-frequency acoustic spectrum analyzer based on polymer integrated optics

NASA Astrophysics Data System (ADS)

Yacoubian, Araz

This dissertation presents an acoustic spectrum analyzer based on nonlinear polymer-integrated optics. The device is used in a scanning heterodyne geometry by zero biasing a Michelson interferometer. It is capable of detecting vibrations from DC to the GHz range. Initial low frequency experiments show that the device is an effective tool for analyzing an acoustic spectrum even in noisy environments. Three generations of integrated sensors are presented, starting with a very lossy (86 dB total insertion loss) initial device that detects vibrations as low as λ/10, and second and third generation improvements with a final device of 44 dB total insertion loss. The sensor was further tested for detecting a pulsed laser-excited vibration and resonances due to the structure of the sample. The data are compared to the acoustic spectrum measured using a low loss passive fiber interferometer detection scheme which utilizes a high speed detector. The peaks present in the passive detection scheme are clearly visible with our sensor data, which have a lower noise floor. Hybrid integration of GHz electronics is also investigated in this dissertation. A voltage controlled oscillator (VCO) is integrated on a polymer device using a new approach. The VCO is shown to operate as specified by the manufacturer, and the RF signal is efficiently launched onto the micro-strip line used for EO modulation. In the future this technology can be used in conjunction with the presented sensor to produce a fully integrated device containing high frequency drive electronics controlled by low DC voltage. Issues related to device fabrication, loss analysis, RF power delivery to drive circuitry, efficient poling of large area samples, and optimizing poling conditions are also discussed throughout the text.

Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

NASA Astrophysics Data System (ADS)

Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

2017-11-01

This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

Radio-Frequency Plasma Cleaning of a Penning Malmberg Trap

NASA Technical Reports Server (NTRS)

Sims, William Herbert, III; Martin, James; Pearson, J. Boise; Lewis, Raymond

2005-01-01

Radio-frequency-generated plasma has been demonstrated to be a promising means of cleaning the interior surfaces of a Penning-Malmberg trap that is used in experiments on the confinement of antimatter. {Such a trap was reported in Modified Penning-Malmberg Trap for Storing Antiprotons (MFS-31780), NASA Tech Briefs, Vol. 29, No. 3 (March 2005), page 66.} Cleaning of the interior surfaces is necessary to minimize numbers of contaminant atoms and molecules, which reduce confinement times by engaging in matter/antimatter-annihilation reactions with confined antimatter particles. A modified Penning-Malmberg trap like the one described in the cited prior article includes several collinear ring electrodes (some of which are segmented) inside a tubular vacuum chamber, as illustrated in Figure 1. During operation of the trap, a small cloud of charged antiparticles (e.g., antiprotons or positrons) is confined to a spheroidal central region by means of a magnetic field in combination with DC and radiofrequency (RF) electric fields applied via the electrodes. In the present developmental method of cleaning by use of RF-generated plasma, one evacuates the vacuum chamber, backfills the chamber with hydrogen at a suitable low pressure, and uses an RF-signal generator and baluns to apply RF voltages to the ring electrodes. Each ring is excited in the polarity opposite that of the adjacent ring. The electric field generated by the RF signal creates a discharge in the low-pressure gas. The RF power and gas pressure are adjusted so that the plasma generated in the discharge (see Figure 2) physically and chemically attacks any solid, liquid, and gaseous contaminant layers on the electrode surfaces. The products of the physical and chemical cleaning reactions are gaseous and are removed by the vacuum pumps.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Ultra Low-Voltage Energy Harvesting

DTIC Science & Technology

2013-09-01

Power PV Photovoltaic R Resistance RF Radio Frequencies S Switch SPICE Simulation Program with Integrated Circuit Emphasis T Switching Cycle xiv...control experiment, a supercapacitor was connected to a photovoltaic (PV) source with a diode in between. The advantages of this circuit were a...Circuits to harvest thermal differences typically produce only 0.02 to 0.15 V, while low-power photovoltaic cells can generate 0.2 to 0.7 V and

A CW radiofrequency ion source for production of negative hydrogen ion beams for cyclotrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalvas, T.; Tarvainen, O.; Komppula, J.

2015-04-08

A CW 13.56 MHz radiofrequency-driven ion source RADIS for production of H{sup −} and D{sup −} beams is under development for replacing the filament-driven ion source of the MCC30/15 cyclotron. The RF ion source has a 16-pole multicusp plasma chamber, an electromagnet-based magnetic filter and an external planar spiral RF antenna behind an AlN window. The extraction is a 5-electrode system with an adjustable puller electrode voltage for optimizing the beam formation, a water-cooled electron dump electrode and an accelerating einzel lens. At 2650 W of RF power, the source produces 1 mA of H{sup −} (2.6 mA/cm{sup 2}), which is the intensity neededmore » at injection for production of 200 µA H{sup +} with the filament-driven ion source. A simple pepperpot device has been developed for characterizing the beam emittance. Plans for improving the power efficiency with the use of a new permanent magnet front plate is discussed.« less

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

NASA Astrophysics Data System (ADS)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma

DOEpatents

Baity, Jr., Frederick W.; Hoffman, Daniel J.; Owens, Thomas L.

1988-01-01

A resonant double loop radio frequency (rf) antenna for radiating high-power rf energy into a magnetically confined plasma. An inductive element in the form of a large current strap, forming the radiating element, is connected between two variable capacitors to form a resonant circuit. A real input impedance results from tapping into the resonant circuit along the inductive element, generally near the midpoint thereof. The impedance can be matched to the source impedance by adjusting the separate capacitors for a given tap arrangement or by keeping the two capacitances fixed and adjustng the tap position. This results in a substantial reduction in the voltage and current in the transmission system to the antenna compared to unmatched antennas. Because the complete circuit loop consisting of the two capacitors and the inductive element is resonant, current flows in the same direction along the entire length of the radiating element and is approximately equal in each branch of the circuit. Unidirectional current flow permits excitation of low order poloidal modes which penetrate more deeply into the plasma.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Perpendicular Biased Ferrite Tuned Cavities for the Fermilab Booster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romanov, Gennady; Awida, Mohamed; Khabiboulline, Timergali

2014-07-01

The aging Fermilab Booster RF system needs an upgrade to support future experimental program. The important feature of the upgrade is substantial enhancement of the requirements for the accelerating cavities. The new requirements include enlargement of the cavity beam pipe aperture, increase of the cavity voltage and increase in the repetition rate. The modification of the present traditional parallel biased ferrite cavities is rather challenging. An alternative to rebuilding the present Fermilab Booster RF cavities is to design and construct new perpendicular biased RF cavities, which potentially offer a number of advantages. An evaluation and a preliminary design of themore » perpendicular biased ferrite tuned cavities for the Fermilab Booster upgrade is described in the paper. Also it is desirable for better Booster performance to improve the capture of beam in the Booster during injection and at the start of the ramp. One possible way to do that is to flatten the bucket by introducing second harmonic cavities into the Booster. This paper also looks into the option of using perpendicularly biased ferrite tuners for the second harmonic cavities.« less

Trap Design and Construction for High-Power Multinuclear Magnetic Resonance Experiments

PubMed Central

Rispoli, Joseph V.; Dimitrov, Ivan E.; Cheshkov, Sergey; Malloy, Craig; Wright, Steven M.; McDougall, Mary P.

2016-01-01

Performing multinuclear experiments requires one or more radiofrequency (RF) coils operating at both the proton and second-nucleus frequencies; however, inductive coupling between coils must be mitigated to retain proton sensitivity and coil tuning stability. The inclusion of trap circuits simplifies placement of multinuclear RF coils while maintaining inter-element isolation. Of the commonly investigated non-proton nuclei, perhaps the most technically demanding is carbon-13, particularly when applying a proton decoupling scheme to improve the resulting spectra. This work presents experimental data for trap circuits withstanding high-power broadband proton decoupling of carbon-13 at 7 T. The advantages and challenges of building trap circuits with various inductor and capacitor components are discussed. Multiple trap designs are evaluated on the bench and utilized on an RF coil at 7 T to detect broadband proton-decoupled carbon-13 spectra from a lipid phantom. A particular trap design, built from a coaxial stub inductor and high-voltage ceramic chip capacitors, is highlighted owing to both its performance and adaptability for planar array coil elements with diverse spatial orientations. PMID:28529464

The characteristics of RF modulated plasma boundary sheaths: An analysis of the standard sheath model

NASA Astrophysics Data System (ADS)

Naggary, Schabnam; Brinkmann, Ralf Peter

2015-09-01

The characteristics of radio frequency (RF) modulated plasma boundary sheaths are studied on the basis of the so-called ``standard sheath model.'' This model assumes that the applied radio frequency ωRF is larger than the plasma frequency of the ions but smaller than that of the electrons. It comprises a phase-averaged ion model - consisting of an equation of continuity (with ionization neglected) and an equation of motion (with collisional ion-neutral interaction taken into account) - a phase-resolved electron model - consisting of an equation of continuity and the assumption of Boltzmann equilibrium -, and Poisson's equation for the electrical field. Previous investigations have studied the standard sheath model under additional approximations, most notably the assumption of a step-like electron front. This contribution presents an investigation and parameter study of the standard sheath model which avoids any further assumptions. The resulting density profiles and overall charge-voltage characteristics are compared with those of the step-model based theories. The authors gratefully acknowledge Efe Kemaneci for helpful comments and fruitful discussions.

Low Energy Dissipation Nano Device Research

NASA Astrophysics Data System (ADS)

Yu, Jenny

2015-03-01

The development of research on energy dissipation has been rapid in energy efficient area. Nano-material power FET is operated as an RF power amplifier, the transport is ballistic, noise is limited and power dissipation is minimized. The goal is Green-save energy by developing the Graphene and carbon nantube microwave and high performance devices. Higher performing RF amplifiers can have multiple impacts on broadly field, for example communication equipment, (such as mobile phone and RADAR); higher power density and lower power dissipation will improve spectral efficiency which translates into higher system level bandwidth and capacity for communications equipment. Thus, fundamental studies of power handling capabilities of new RF (nano)technologies can have broad, sweeping impact. Because it is critical to maximizing the power handling ability of grephene and carbon nanotube FET, the initial task focuses on measuring and understanding the mechanism of electrical breakdown. We aim specifically to determine how the breakdown voltage in graphene and nanotubes is related to the source-drain spacing, electrode material and thickness, and substrate, and thus develop reliable statistics on the breakdown mechanism and probability.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Synchronous radio-frequency FM signal generator using direct digital synthesizers

NASA Astrophysics Data System (ADS)

Arablu, Masoud; Kafashi, Sajad; Smith, Stuart T.

2018-04-01

A novel Radio-Frequency Frequency-Modulated (RF-FM) signal generation method is introduced and a prototype circuit developed to evaluate its functionality and performance. The RF-FM signal generator uses a modulated, voltage-controlled time delay to correspondingly modulate the phase of a 10 MHz sinusoidal reference signal. This modulated reference signal is, in turn, used to clock a Direct Digital Synthesizer (DDS) circuit resulting in an FM signal at its output. The modulating signal that is input to the voltage-controlled time delay circuit is generated by another DDS that is synchronously clocked by the same 10 MHz sine wave signal before modulation. As a consequence, all of the digital components are timed from a single sine wave oscillator that forms the basis of all timing. The resultant output signal comprises a center, or carrier, frequency plus a series of phase-synchronized sidebands having exact integer harmonic frequency separation. In this study, carrier frequencies ranging from 10 MHz to 70 MHz are generated with modulation frequencies ranging from 10 kHz to 300 kHz. The captured spectra show that the FM signal characteristics, amplitude and phase, of the sidebands and the modulation depth are consistent with the Jacobi-Anger expansion for modulated harmonic signals.

Gas cluster ion beam surface treatments for reducing field emission and breakdown of electrodes and SRF cavities

NASA Astrophysics Data System (ADS)

Swenson, D. R.; Wu, A. T.; Degenkolb, E.; Insepov, Z.

2007-08-01

Sub-micron-scale surface roughness and contamination cause field emission that can lead to high-voltage breakdown of electrodes, and these are limiting factors in the development of high gradient RF technology. We are studying various Gas Cluster Ion Beam (GCIB) treatments to smooth, clean, etch and/or chemically alter electrode surfaces to allow higher fields and accelerating gradients, and to reduce the time and cost of conditioning high-voltage electrodes. For this paper, we have processed Nb, stainless steel and Ti electrode materials using beams of Ar, O2, or NF3 + O2 clusters with accelerating potentials up to 35 kV. Using a scanning field emission microscope (SFEM), we have repeatedly seen a dramatic reduction in the number of field emission sites on Nb coupons treated with GCIB. Smoothing effects on stainless steel and Ti substrates, evaluated using SEM and AFM imaging, show that 200-nm-wide polishing scratch marks are greatly attenuated. A 150-mm diameter GCIB-treated stainless steel electrode has shown virtually no DC field emission current at gradients over 20 MV/m.

Substrate bias effects on composition and coercivity of CoCrTa/Cr thin films on canasite and glass

NASA Astrophysics Data System (ADS)

Deng, Y.; Lambeth, D. N.; Sui, X.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

The efficiency of photovoltaic cells exposed to pulsed laser light

NASA Technical Reports Server (NTRS)

Lowe, R. A.; Landis, G. A.; Jenkins, P.

1993-01-01

Future space missions may use laser power beaming systems with a free electron laser (FEL) to transmit light to a photovoltaic array receiver. To investigate the efficiency of solar cells with pulsed laser light, several types of GaAs, Si, CuInSe2, and GaSb cells were tested with the simulated pulse format of the induction and radio frequency (RF) FEL. The induction pulse format was simulated with an 800-watt average power copper vapor laser and the RF format with a frequency-doubled mode-locked Nd:YAG laser. Averaged current vs bias voltage measurements for each cell were taken at various optical power levels and the efficiency measured at the maximum power point. Experimental results show that the conversion efficiency for the cells tested is highly dependent on cell minority carrier lifetime, the width and frequency of the pulses, load impedance, and the average incident power. Three main effects were found to decrease the efficiency of solar cells exposed to simulated FEL illumination: cell series resistance, LC 'ringing', and output inductance. Improvements in efficiency were achieved by modifying the frequency response of the cell to match the spectral energy content of the laser pulse with external passive components.

An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

NASA Astrophysics Data System (ADS)

Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

2013-06-01

Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

Wireless and batteryless biomedical microsystem for neural recording and epilepsy suppression based on brain focal cooling.

PubMed

Hou, K-C; Chang, C-W; Chiou, J-C; Huang, Y-H; Shaw, F-Z

2011-12-01

This work presents a biomedical microsystem with a wireless radiofrequency (RF)-powered electronics and versatile sensors/actuators for use in nanomedicinal diagnosis and therapy. The cooling of brain tissue has the potential to reduce the frequency and severity of epilepsy. Miniaturised spiral coils as a wireless power module with low-dropout linear regulator circuit convert RF signals into a DC voltage, can be implanted without a battery in monitoring free behaviour. A thermoelectric (TE) cooler is an actuator that is employed to cool down brain tissue to suppress epilepsy. Electroencephalogram (EEG) electrodes and TE coolers are integrated to form module that is placed inside the head of a rat and fastened with a bio-compatible material. EEG signals are used to identify waveforms associated with epilepsy and are measured using readout circuits. The wireless part of the presented design achieves a low quiescent current and line/load regulation and high antenna/current efficiency with thermal protection to avoid damage to the implanted tissue. Epilepsy is suppressed by reducing the temperature to reduce the duration of this epileptic episode. Related characterisations demonstrate that the proposed design can be adopted in an effective nanomedicine microsystem.

Atomic ion clock with two ion traps, and method to transfer ions

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor); Chung, Sang K. (Inventor)

2011-01-01

An atomic ion clock with a first ion trap and a second ion trap, where the second ion trap is of higher order than the first ion trap. In one embodiment, ions may be shuttled back and forth from one ion trap to the other by application of voltage ramps to the electrodes in the ion traps, where microwave interrogation takes place when the ions are in the second ion trap, and fluorescence is induced and measured when the ions are in the first ion trap. In one embodiment, the RF voltages applied to the second ion trap to contain the ions are at a higher frequency than that applied to the first ion trap. Other embodiments are described and claimed.

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Development and study of charge sensors for fast charge detection in quantum dots

NASA Astrophysics Data System (ADS)

Thalakulam, Madhu

Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity. We have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime. A study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.

An adaptive array antenna for mobile satellite communications

NASA Technical Reports Server (NTRS)

Milne, Robert

1988-01-01

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser.

PubMed

Li, Xiang; Wang, Hong; Qiao, Zhongliang; Guo, Xin; Wang, Wanjun; Ng, Geok Ing; Zhang, Yu; Xu, Yingqiang; Niu, Zhichuan; Tong, Cunzhu; Liu, Chongyang

2018-04-02

A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at ~18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption.

Monitoring local heating around an interventional MRI antenna with RF radiometry

PubMed Central

Ertürk, M. Arcan; El-Sharkawy, AbdEl-Monem M.; Bottomley, Paul A.

2015-01-01

Purpose: Radiofrequency (RF) radiometry uses thermal noise detected by an antenna to measure the temperature of objects independent of medical imaging technologies such as magnetic resonance imaging (MRI). Here, an active interventional MRI antenna can be deployed as a RF radiometer to measure local heating, as a possible new method of monitoring device safety and thermal therapy. Methods: A 128 MHz radiometer receiver was fabricated to measure the RF noise voltage from an interventional 3 T MRI loopless antenna and calibrated for temperature in a uniformly heated bioanalogous gel phantom. Local heating (ΔT) was induced using the antenna for RF transmission and measured by RF radiometry, fiber-optic thermal sensors, and MRI thermometry. The spatial thermal sensitivity of the antenna radiometer was numerically computed using a method-of-moment electric field analyses. The gel’s thermal conductivity was measured by MRI thermometry, and the localized time-dependent ΔT distribution computed from the bioheat transfer equation and compared with radiometry measurements. A “H-factor” relating the 1 g-averaged ΔT to the radiometric temperature was introduced to estimate peak temperature rise in the antenna’s sensitive region. Results: The loopless antenna radiometer linearly tracked temperature inside a thermally equilibrated phantom up to 73 °C to within ±0.3 °C at a 2 Hz sample rate. Computed and MRI thermometric measures of peak ΔT agreed within 13%. The peak 1 g-average temperature was H = 1.36 ± 0.02 times higher than the radiometric temperature for any media with a thermal conductivity of 0.15–0.50 (W/m)/K, indicating that the radiometer can measure peak 1 g-averaged ΔT in physiologically relevant tissue within ±0.4 °C. Conclusions: Active internal MRI detectors can serve as RF radiometers at the MRI frequency to provide accurate independent measures of local and peak temperature without the artifacts that can accompany MRI thermometry or the extra space needed to accommodate alternative thermal transducers. A RF radiometer could be integrated in a MRI scanner to permit “self-monitoring” for assuring device safety and/or monitoring delivery of thermal therapy. PMID:25735295

Technical Digest of the 1998 Summer Topical Meeting on Organic Optics and Optoelectronics

DTIC Science & Technology

1998-07-01

substantially larger voltages (~2x), however, signal distortion and inter- symbol interference due to multiple RF reflections limit their...technology as data page composers. Texas Instrument’s DMD 0-7803-4953-9/98$10.00©1998 IEEE system has already been used in this capacity in several... lithography for fabricating and integrating the heads and sliders. The application of MEMS components and micromachined optical bench packaging techniques

High efficiency RF amplifier development over wide dynamic range for accelerator application

NASA Astrophysics Data System (ADS)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Space evaluation of optical modulators for microwave photonic on-board applications

NASA Astrophysics Data System (ADS)

Le Kernec, A.; Sotom, M.; Bénazet, B.; Barbero, J.; Peñate, L.; Maignan, M.; Esquivias, I.; Lopez, F.; Karafolas, N.

2017-11-01

Since several years, perspectives and assets offered by photonic technologies compared with their traditional RF counterparts (mass and volume reduction, transparency to RF frequency, RF isolation), make them particularly attractive for space applications [1] and, in particular, telecommunication satellites [2]. However, the development of photonic payload concepts have concurrently risen and made the problem of the ability of optoelectronic components to withstand space environment more and more pressing. Indeed, photonic components used in such photonic payloads architectures come from terrestrial networks applications in order to benefit from research and development in this field. This paper presents some results obtained in the frame of an ESA-funded project, carried out by Thales Alenia Space France, as prime contractor, and Alter Technology Group Spain (ATG) and Universidad Politecnica de Madrid (UPM), as subcontractors, one objective of which was to assess commercial high frequency optical intensity modulators for space use through a functional and environmental test campaign. Their potential applications in microwave photonic sub-systems of telecom satellite payloads are identified and related requirements are presented. Optical modulator technologies are reviewed and compared through, but not limited to, a specific figure of merit, taking into account two key features of these components : optical insertion loss and RF half-wave voltage. Some conclusions on these different technologies are given, on the basis of the test results, and their suitability for the targeted applications and environment is highlighted.

Experimental Study of Convective Cells and RF Sheaths Excited by a Fast Wave Antenna in the LAPD

NASA Astrophysics Data System (ADS)

Martin, Michael; Gekelman, Walter; Pribyl, Patrick; van Compernolle, Bart; Carter, Troy; van Eester, Dirk; Crombé, Kristel

2016-10-01

Ion cyclotron resonance heating (ICRH) will be essential for ITER where it is planned to couple 20 MW to the plasma. During ICRH, radio frequency (RF) sheaths may form on the antenna or farther away, and convective cells are suspected to form adjacent to ICRH antennas, negatively affecting both machine and plasma performance. The LAPD (ne 10 12 - 13cm-3 , Te 1-10 eV, B0 0.4 to 2 kG, diameter 60 cm, length 17m) is an ideal device for performing detailed experiments to fully diagnose these phenomena. A 200 kW RF system capable of pulsing at the 1 Hz. rep. rate of the LAPD and operating from 2 to 2.5 MHz has been constructed to perform such studies. B0 can be adjusted so that this encompasses the 1st to 7th harmonic of fci in H plasmas. Emissive, Mach, Langmuir, and B-field probes measured plasma potential, bulk plasma flows, wave patterns, ne, and Te in 2D planes at various axial locations from the antenna. Plasma potential enhancements of up to 90 V along magnetic field lines connected to the antenna and induced ExB flows consistent in structure with convective cells were observed. Details of these observations along with power scaling of RF sheath voltage and convective cell flows will be presented.

High voltage stability of LiCoO2 particles with a nano-scale Lipon coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yoongu; Veith, Gabriel M; Nanda, Jagjit

2011-01-01

For high-voltage cycling of rechargeable Li batteries, a nano-scale amorphous Li-ion conductor, lithium phosphorus oxynitride (Lipon), has been coated on surfaces of LiCoO{sub 2} particles by combining a RF-magnetron sputtering technique and mechanical agitation of LiCoO{sub 2} powders. LiCoO{sub 2} particles coated with 0.36 wt% ({approx}1 nm thick) of the amorphous Lipon, retain 90% of their original capacity compared to non-coated cathode materials that retain only 65% of their original capacity after more than 40 cycles in the 3.0-4.4 V range with a standard carbonate electrolyte. The reason for the better high-voltage cycling behavior is attributed to reduction in themore » side reactions that cause increase of the cell resistance during cycling. Further, Lipon coated particles are not damaged, whereas uncoated particles are badly cracked after cycling. Extending the charge of Lipon-coated LiCoO{sub 2} to higher voltage enhances the specific capacity, but more importantly the Lipon-coated material is also more stable and tolerant of high voltage excursions. A drawback of Lipon coating, particularly as thicker films are applied to cathode powders, is the increased electronic resistance that reduces the power performance.« less

Selective RF pulses in NMR and their effect on coupled and uncoupled spin systems

NASA Astrophysics Data System (ADS)

Slotboom, J.

1993-10-01

This thesis describes various aspects of the usage of shaped RF-pulses for volume selection and spectral editing. Contents: Introduction--The History of Magnetic Resonance in a Nutshell, and The Usage of RF Pulses in Contemporary MRS and MRI; Theoretical and Practical Aspects of Localized NMR Spectroscopy; The Effects of RF Pulse Shape Discretization on the Spatially Selective Performance; Design of Frequency-Selective RF Pulses by Optimizing a Small Number of Pulse Parameters; A Single-Shot Localization Pulse Sequence Suited for Coils with Inhomogeneous RF Fields Using Adiabatic Slice-Selective RF Pulses; The Bloch Equations for an AB System and the Design of Spin State Selective RF Pulses for Coupled Spin Systems; The Effects of Frequency Selective RF Pulses on J Coupled Spin-1/2 Systems; A Quantitative (1)H MRS in vivo Study of the Effects of L-Ornithine-L-Aspartate on the Development of Mild Encephalopathy Using a Single Shot Localization Technique Based on SAR Reduced Adiabatic 2(pi) Pulses.

Vacuum chamber for ion manipulation device

DOEpatents

Chen, Tsung-Chi; Tang, Keqi; Ibrahim, Yehia M; Smith, Richard D; Anderson, Gordon A; Baker, Erin M

2014-12-09

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area. A predetermined number of pairs of surfaces are disposed in one or more chambers, forming a multiple-layer ion mobility cyclotron device.

DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

NASA Astrophysics Data System (ADS)

Butcher, K. S. A.; Terziyska, P. T.; Gergova, R.; Georgiev, V.; Georgieva, D.; Binsted, P. W.; Skerget, S.

2017-01-01

It is shown that attractive electrostatic interactions between regions of positive charge in RF plasmas and the negative charge of metal wetting layers, present during compound semiconductor film growth, can have a greater influence than substrate temperature on film morphology. Using GaN and InN film growth as examples, the DC field component of a remote RF plasma is demonstrated to electrostatically affect metal wetting layers to the point of actually determining the mode of film growth. Examples of enhanced self-seeded nanopillar growth are provided in the case where the substrate is directly exposed to the DC field generated by the plasma. In another case, we show that electrostatic shielding of the DC field from the substrate can result in the growth of Ga-face GaN layers from gallium metal wetting layers at 490 °C with root-mean-square roughness values as low as 0.6 nm. This study has been carried out using a migration enhanced deposition technique with pulsed delivery of the metal precursor allowing the identification of metal wetting layers versus metal droplets as a function of the quantity of metal source delivered per cycle. It is also shown that electrostatic interactions with the plasma can affect metal rich growth limits, causing metal droplet formation for lower metal flux than would otherwise occur. Accordingly, film growth rates can be increased when shielding the substrate from the positive charge region of the plasma. For the example shown here, growth rates were more than doubled using a shielding grid.

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Zhang, Ping

Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy) sample preparation technique allows the investigation of the microstructures of these thin films both before and after mechanical testing to correlate the microstructural findings with the mechanical behavior. Major studies include grain boundary strengthening in pure Al, plastic deformation in pure Al by inhomogeneous deformation and localized grain thinning, solid solution and precipitate strengthening in Al-Ti alloys, and stress relaxation of Al and Al-Ti.

Development of a helicon ion source: Simulations and preliminary experiments.

PubMed

Afsharmanesh, M; Habibi, M

2018-03-01

In the present context, the extraction system of a helicon ion source has been simulated and constructed. Results of the ion source commissioning at up to 20 kV are presented as well as simulations of an ion beam extraction system. Argon current of more than 200 μA at up to 20 kV is extracted and is characterized with a Faraday cup and beam profile monitoring grid. By changing different ion source parameters such as RF power, extraction voltage, and working pressure, an ion beam with current distribution exhibiting a central core has been detected. Jump transition of ion beam current emerges at the RF power near to 700 W, which reveals that the helicon mode excitation has reached this power. Furthermore, measuring the emission line intensity of Ar ii at 434.8 nm is the other way we have used for demonstrating the mode transition from inductively coupled plasma to helicon. Due to asymmetrical longitudinal power absorption of a half-helix helicon antenna, it is used for the ion source development. The modeling of the plasma part of the ion source has been carried out using a code, HELIC. Simulations are carried out by taking into account a Gaussian radial plasma density profile and for plasma densities in range of 10 18 -10 19 m -3 . Power absorption spectrum and the excited helicon mode number are obtained. Longitudinal RF power absorption for two different antenna positions is compared. Our results indicate that positioning the antenna near to the plasma electrode is desirable for the ion beam extraction. The simulation of the extraction system was performed with the ion optical code IBSimu, making it the first helicon ion source extraction designed with the code. Ion beam emittance and Twiss parameters of the ellipse emittance are calculated at different iterations and mesh sizes, and the best values of the mesh size and iteration number have been obtained for the calculations. The simulated ion beam extraction system has been evaluated using optimized parameters such as the gap distance between electrodes, electrodes aperture, and extraction voltage. The gap distance, ground electrode aperture, and extraction voltage have been changed between 3 and 9 mm, 2-6.5 mm, and 10-35 kV in the simulations, respectively.

Development of a helicon ion source: Simulations and preliminary experiments

NASA Astrophysics Data System (ADS)

Afsharmanesh, M.; Habibi, M.

2018-03-01

In the present context, the extraction system of a helicon ion source has been simulated and constructed. Results of the ion source commissioning at up to 20 kV are presented as well as simulations of an ion beam extraction system. Argon current of more than 200 μA at up to 20 kV is extracted and is characterized with a Faraday cup and beam profile monitoring grid. By changing different ion source parameters such as RF power, extraction voltage, and working pressure, an ion beam with current distribution exhibiting a central core has been detected. Jump transition of ion beam current emerges at the RF power near to 700 W, which reveals that the helicon mode excitation has reached this power. Furthermore, measuring the emission line intensity of Ar ii at 434.8 nm is the other way we have used for demonstrating the mode transition from inductively coupled plasma to helicon. Due to asymmetrical longitudinal power absorption of a half-helix helicon antenna, it is used for the ion source development. The modeling of the plasma part of the ion source has been carried out using a code, HELIC. Simulations are carried out by taking into account a Gaussian radial plasma density profile and for plasma densities in range of 1018-1019 m-3. Power absorption spectrum and the excited helicon mode number are obtained. Longitudinal RF power absorption for two different antenna positions is compared. Our results indicate that positioning the antenna near to the plasma electrode is desirable for the ion beam extraction. The simulation of the extraction system was performed with the ion optical code IBSimu, making it the first helicon ion source extraction designed with the code. Ion beam emittance and Twiss parameters of the ellipse emittance are calculated at different iterations and mesh sizes, and the best values of the mesh size and iteration number have been obtained for the calculations. The simulated ion beam extraction system has been evaluated using optimized parameters such as the gap distance between electrodes, electrodes aperture, and extraction voltage. The gap distance, ground electrode aperture, and extraction voltage have been changed between 3 and 9 mm, 2-6.5 mm, and 10-35 kV in the simulations, respectively.

Electronic Model of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry (Technical Monitor)

2001-01-01

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

Exposure to 1800 MHz radiofrequency radiation impairs neurite outgrowth of embryonic neural stem cells.

PubMed

Chen, Chunhai; Ma, Qinlong; Liu, Chuan; Deng, Ping; Zhu, Gang; Zhang, Lei; He, Mindi; Lu, Yonghui; Duan, Weixia; Pei, Liping; Li, Min; Yu, Zhengping; Zhou, Zhou

2014-05-29

A radiofrequency electromagnetic field (RF-EMF) of 1800 MHz is widely used in mobile communications. However, the effects of RF-EMFs on cell biology are unclear. Embryonic neural stem cells (eNSCs) play a critical role in brain development. Thus, detecting the effects of RF-EMF on eNSCs is important for exploring the effects of RF-EMF on brain development. Here, we exposed eNSCs to 1800 MHz RF-EMF at specific absorption rate (SAR) values of 1, 2, and 4 W/kg for 1, 2, and 3 days. We found that 1800 MHz RF-EMF exposure did not influence eNSC apoptosis, proliferation, cell cycle or the mRNA expressions of related genes. RF-EMF exposure also did not alter the ratio of eNSC differentiated neurons and astrocytes. However, neurite outgrowth of eNSC differentiated neurons was inhibited after 4 W/kg RF-EMF exposure for 3 days. Additionally, the mRNA and protein expression of the proneural genes Ngn1 and NeuroD, which are crucial for neurite outgrowth, were decreased after RF-EMF exposure. The expression of their inhibitor Hes1 was upregulated by RF-EMF exposure. These results together suggested that 1800 MHz RF-EMF exposure impairs neurite outgrowth of eNSCs. More attention should be given to the potential adverse effects of RF-EMF exposure on brain development.

Three Dimensional Integration and On-Wafer Packaging for Heterogeneous Wafer-Scale Circuit Architectures

DTIC Science & Technology

2006-11-01

Chip Level CMOS Chip High resistivity Si Metal Interconnect 25μm 24GHz fully integrated receiver CMOS transimpedance Amplifier (13GHz BW, 52dBΩ...power of a high-resistivity SiGe power amplifier chip with the wide operating frequency range and compactness of a CMOS mixed signal chip operating...With good RF channel selectivity, system specifications such as the linearity of the low noise amplifier (LNA), the phase noise of the voltage

Design and test of a 2.25-MW transformer rectifier assembly

NASA Technical Reports Server (NTRS)

Cormier, R.; Daeges, J.

1989-01-01

A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Research and development on advanced silicon carbide thin film growth techniques and fabrication of high power and microwave frequency silicon carbide-based device structures

NASA Astrophysics Data System (ADS)

Davis, Robert F.

1990-12-01

The RF operation of MESFETs and bipolar transistors fabricated from both alpha- and beta-SiC have been modeled. The results show that SiC has considerable promise for producing microwave power MESFETs with RF output power capability greater (approx. 4 times) than can be obtained with any of the commonly used semiconductors (e.g., GaAs), this due to the high breakdown field of SiC that allows high bias voltage to be applied. These device modeling efforts have been used as a guide to design a new MESFET mask set with a aS micron gate length and reduced gate pad area. For the first time, positive gain was observed for a SiC transistor at microwave frequencies. The highest values for Ft and Fmax were 2.9 GHz and 1.9 GHz, respectively. The highest current and power gains observed at 1.0 GHz were 8.5 dB and 7 db, respectively. Avalanche characteristics for a 6H-SiC IMPATT were observed for the first time. Heteroepitaxial growth of Ti on (0001) 6H-SiC has been achieved at room and elevated temperatures. Current voltage measurements display shifts toward ohmic behavior after annealing at 400 C. Molecular beam epitaxy equipment has been designed and commissioned.

Response of geostationary communications satellite solid-state power amplifiers to high-energy electron fluence

NASA Astrophysics Data System (ADS)

Lohmeyer, Whitney; Carlton, Ashley; Wong, Frankie; Bodeau, Michael; Kennedy, Andrew; Cahoy, Kerri

2015-05-01

The key components in communications satellite payloads are the high-power amplifiers that amplify the received signal so that it can be accurately transmitted to the intended end user. In this study, we examine 26 amplifier anomalies and quantify the high-energy electron environment for periods of time prior to the anomalies. Building on the work of Lohmeyer and Cahoy (2013), we find that anomalies occur at a rate higher than just by chance when the >2 MeV electron fluence accumulated over 14 and 21 days is elevated. To try to understand "why," we model the amplifier subsystem to assess whether the dielectric material in the radio frequency (RF) coaxial cables, which are the most exposed part of the system, is liable to experience electrical breakdown due to internal charging. We find that the accumulated electric field over the 14 and 21 days leading up to the anomalies is high enough to cause the dielectric material in the coax to breakdown. We also find that the accumulated voltages reached are high enough to compromise components in the amplifier system, for example, the direct current (DC) blocking capacitor. An electron beam test using a representative coaxial cable terminated in a blocking capacitor showed that discharges could occur with peak voltages and energies sufficient to damage active RF semiconductor devices.

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

Low-level exposure to radiofrequency electromagnetic fields: health effects and research needs.

PubMed

Repacholi, M H

1998-01-01

The World Health Organization (WHO), the International Commission on Non-Ionizing Radiation Protection (ICNIRP), and the German and Austrian Governments jointly sponsored an international seminar in November of 1996 on the biological effects of low-level radiofrequency (RF) electromagnetic fields. For purposes of this seminar, RF fields having frequencies only in the range of about 10 MHz to 300 GHz were considered. This is one of a series of scientific review seminars held under the International Electromagnetic Field (EMF) Project to identify any health hazards from EMF exposure. The scientific literature was reviewed during the seminar and expert working groups formed to provide a status report on possible health effects from exposure to low-level RF fields and identify gaps in knowledge requiring more research to improve health risk assessments. It was concluded that, although hazards from exposure to high-level (thermal) RF fields were established, no known health hazards were associated with exposure to RF sources emitting fields too low to cause a significant temperature rise in tissue. Biological effects from low-level RF exposure were identified needing replication and further study. These included in vitro studies of cell kinetics and proliferation effects, effects on genes, signal transduction effects and alterations in membrane structure and function, and biophysical and biochemical mechanisms for RF field effects. In vivo studies should focus on the potential for cancer promotion, co-promotion and progression, as well as possible synergistic, genotoxic, immunological, and carcinogenic effects associated with chronic low-level RF exposure. Research is needed to determine whether low-level RF exposure causes DNA damage or influences central nervous system function, melatonin synthesis, permeability of the blood brain barrier (BBB), or reaction to neurotropic drugs. Reported RF-induced changes to eye structure and function should also be investigated. Epidemiological studies should investigate: the use of mobile telephones with hand-held antennae and incidence of various cancers; reports of headache, sleep disturbance, and other subjective effects that may arise from proximity to RF emitters, and laboratory studies should be conducted on people reporting these effects; cohorts with high occupational RF exposure for changes in cancer incidence; adverse pregnancy outcomes in various highly RF exposed occupational groups; and ocular pathologies in mobile telephone users and in highly RF exposed occupational groups. Studies of populations with residential exposure from point sources, such as broadcasting transmitters or mobile telephone base stations have caused widespread health concerns among the public, even though RF exposures are very low. Recent studies that may indicate an increased incidence of cancer in exposed populations should be investigated further.

A low-power, high-efficiency Ka-band TWTA

NASA Technical Reports Server (NTRS)

Curren, A. N.; Dayton, J. A., Jr.; Palmer, R. W.; Force, D. A.; Tamashiro, R. N.; Wilson, J. F.; Dombro, L.; Harvey, W. L.

1991-01-01

A NASA-sponsored program is described for developing a high-efficiency low-power TWTA operating at 32 GHz and meeting the requirements for the Cassini Mission to study Saturn. The required RF output power of the helix TWT is 10 watts, while the dc power from the spacecraft is limited to about 30 watts. The performance level permits the transmission to earth of all mission data. Several novel technologies are incorporated into the TWT to achieve this efficiency including an advanced dynamic velocity taper characterized by a nonlinear reduction in pitch in the output helix section and a multistage depressed collector employing copper electrodes treated for secondary electron-emission suppression. Preliminary program results are encouraging: RF output power of 10.6 watts is obtained at 14-mA beam current and 5.2-kV helix voltage with overall TWT efficiency exceeding 40 percent.

RF and structural characterization of new SRF films

DOE Office of Scientific and Technical Information (OSTI.GOV)

A.-M. Valente-Feliciano,H. L. Phillips,C. E. Reece,X. Zhao,D. Gu,R. Lukaszew,B. Xiao,K. Seo

2009-09-01

In the past years, energetic vacuum deposition methods have been developed in different laboratories to improve Nb/Cu technology for superconducting cavities. Jefferson Lab is pursuing energetic condensation deposition via Electron Cyclotron Resonance. As part of this study, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated. The film surface and structure analyses are conducted with various techniques like X-ray diffraction, Transmission Electron Microscopy, Auger Electron Spectroscopy and RHEED. The microwave properties of the films are characterized on 50 mm disk samples with a 7.5 GHz surface impedance characterization system. Thismore » paper presents surface impedance measurements in correlation with surface and material characterization for Nb films produced on copper substrates with different bias voltages and also highlights emerging opportunities for developing multilayer SRF films with a new deposition system.« less

Multi-beam linear accelerator EVT

NASA Astrophysics Data System (ADS)

Teryaev, Vladimir E.; Kazakov, Sergey Yu.; Hirshfield, Jay L.

2016-09-01

A novel electron multi-beam accelerator is presented. The accelerator, short-named EVT (Electron Voltage Transformer) belongs to the class of two-beam accelerators. It combines an RF generator and essentially an accelerator within the same vacuum envelope. Drive beam-lets and an accelerated beam are modulated in RF modulators and then bunches pass into an accelerating structure, comprising uncoupled with each other and inductive tuned cavities, where the energy transfer from the drive beams to the accelerated beam occurs. A phasing of bunches is solved by choice correspond distances between gaps of the adjacent cavities. Preliminary results of numerical simulations and the initial specification of EVT operating in S-band, with a 60 kV gun and generating a 2.7 A, 1.1 MV beam at its output is presented. A relatively high efficiency of 67% and high design average power suggest that EVT can find its use in industrial applications.

Multi-beam linear accelerator EVT

DOE PAGES

Teryaev, Vladimir E.; Kazakov, Sergey Yu.; Hirshfield, Jay L.

2016-03-29

A novel electron multi-beam accelerator is presented. The accelerator, short-named EVT (Electron Voltage Transformer) belongs to the class of two-beam accelerators. It combines an RF generator and essentially an accelerator within the same vacuum envelope. Drive beam-lets and an accelerated beam are modulated in RF modulators and then bunches pass into an accelerating structure, comprising uncoupled with each other and inductive tuned cavities, where the energy transfer from the drive beams to the accelerated beam occurs. A phasing of bunches is solved by choice correspond distances between gaps of the adjacent cavities. Preliminary results of numerical simulations and the initialmore » specification of EVT operating in S-band, with a 60 kV gun and generating a 2.7 A, 1.1 MV beam at its output is presented. Furthermore, a relatively high efficiency of 67% and high design average power suggest that EVT can find its use in industrial applications.« less

A low-power, high-efficiency Ka-band TWTA

NASA Astrophysics Data System (ADS)

Curren, A. N.; Dayton, J. A., Jr.; Palmer, R. W.; Force, D. A.; Tamashiro, R. N.; Wilson, J. F.; Dombro, L.; Harvey, W. L.

1991-11-01

A NASA-sponsored program is described for developing a high-efficiency low-power TWTA operating at 32 GHz and meeting the requirements for the Cassini Mission to study Saturn. The required RF output power of the helix TWT is 10 watts, while the dc power from the spacecraft is limited to about 30 watts. The performance level permits the transmission to earth of all mission data. Several novel technologies are incorporated into the TWT to achieve this efficiency including an advanced dynamic velocity taper characterized by a nonlinear reduction in pitch in the output helix section and a multistage depressed collector employing copper electrodes treated for secondary electron-emission suppression. Preliminary program results are encouraging: RF output power of 10.6 watts is obtained at 14-mA beam current and 5.2-kV helix voltage with overall TWT efficiency exceeding 40 percent.

Characterization of simple wireless neurostimulators and sensors.

PubMed

Gulick, Daniel W; Towe, Bruce C

2014-01-01

A single diode with a wireless power source and electrodes can act as an implantable stimulator or sensor. We have built such devices using RF and ultrasound power coupling. These simple devices could drastically reduce the size, weight, and cost of implants for applications where efficiency is not critical. However, a shortcoming has been a lack of control: any movement of the external power source would change the power coupling, thereby changing the stimulation current or modulating the sensor response. To correct for changes in power and signal coupling, we propose to use harmonic signals from the device. The diode acts as a frequency multiplier, and the harmonics it emits contain information about the drive level and bias. A simplified model suggests that estimation of power, electrode bias, and electrode resistance is possible from information contained in radiated harmonics even in the presence of significant noise. We also built a simple RF-powered stimulator with an onboard voltage limiter.

Design and development of a 6 MW peak, 24 kW average power S-band klystron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, L.M.; Meena, Rakesh; Nangru, Subhash

2011-07-01

A 6 MW peak, 24 kW average power S-band Klystron is under development at CEERI, Pilani under an MoU between BARC and CEERI. The design of the klystron has been completed. The electron gun has been designed using TRAK and MAGIC codes. RF cavities have been designed using HFSS and CST Microwave Studio while the complete beam wave interaction simulation has been done using MAGIC code. The thermal design of collector and RF window has been done using ANSYS code. A Gun Collector Test Module (GCTM) was developed before making actual klystron to validate gun perveance and thermal design ofmore » collector. A high voltage solid state pulsed modulator has been installed for performance valuation of the tube. The paper will cover the design aspects of the tube and experimental test results of GCTM and klystron. (author)« less

NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Neubauer, M.

A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operationmore » cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.« less

Full-Field Spectroscopy at Megahertz-frame-rates: Application of Coherent Time-Stretch Transform

NASA Astrophysics Data System (ADS)

DeVore, Peter Thomas Setsuda

Outliers or rogue events are found extensively in our world and have incredible effects. Also called rare events, they arise in the distribution of wealth (e.g., Pareto index), finance, network traffic, ocean waves, and e-commerce (selling less of more). Interest in rare optical events exploded after the sighting of optical rogue waves in laboratory experiments at UCLA. Detecting such tail events in fast streams of information necessitates real-time measurements. The Coherent Time-Stretch Transform chirps a pulsed source of radiation so that its temporal envelope matches its spectral profile (analogous to the far field regime of spatial diffraction), and the mapped spectral electric field is slow enough to be captured by a real-time digitizer. Combining this technique with spectral encoding, the time stretch technique has enabled a new class of ultra-high performance spectrometers and cameras (30+ MHz), and analog-to-digital converters that have led to the discovery of optical rogue waves and detection of cancer cells in blood with one in a million sensitivity. Conventionally, the Coherent Time-Stretch Transform maps the spectrum into the temporal electric field, but the time-dilation process along with inherent fiber losses results in reduction of peak power and loss of sensitivity, a problem exacerbated by extremely narrow molecular linewidths. The loss issue notwithstanding, in many cases the requisite dispersive optical device is not available. By extending the Coherent Time-Stretch Transform to the temporal near field, I have demonstrated, for the first time, phase-sensitive absorption spectroscopy of a gaseous sample at millions of frames per second. As the Coherent Time-Stretch Transform may capture both near and far field optical waves, it is a complete spectro-temporal optical characterization tool. This is manifested as an amplitude-dependent chirp, which implies the ability to measure the complex refractive index dispersion at megahertz frame rates. This technique is not only four orders of magnitude faster than even the fastest (kHz) spectrometers, but will also enable capture of real-time complex dielectric function dynamics of plasmas and chemical reactions (e.g. combustion). It also has applications in high-energy physics, biology, and monitoring fast high-throughput industrial processes. Adding an electro-optic modulator to the Time-Stretch Transform yields time-to-time mapping of electrical waveforms. Known as TiSER, it is an analog slow-motion processor that uses light to reduce the bandwidth of broadband RF signals for capture by high-sensitivity analog-to-digital converters (ADC). However, the electro-optic modulator limits the electrical bandwidth of TiSER. To solve this, I introduced Optical Sideband-only Amplification, wherein electro-optically generated modulation (containing the RF information) is amplified at the expense of the carrier, addressing the two most important problems plaguing electro-optic modulators: (1) low RF bandwidth and (2) high required RF drive voltages. I demonstrated drive voltage reductions of 5x at 10 GHz and 10x at 50 GHz, while simultaneously increasing the RF bandwidth.

Exposure to 1800 MHz radiofrequency radiation impairs neurite outgrowth of embryonic neural stem cells

PubMed Central

Chen, Chunhai; Ma, Qinlong; Liu, Chuan; Deng, Ping; Zhu, Gang; Zhang, Lei; He, Mindi; Lu, Yonghui; Duan, Weixia; Pei, Liping; Li, Min; Yu, Zhengping; Zhou, Zhou

2014-01-01

A radiofrequency electromagnetic field (RF-EMF) of 1800 MHz is widely used in mobile communications. However, the effects of RF-EMFs on cell biology are unclear. Embryonic neural stem cells (eNSCs) play a critical role in brain development. Thus, detecting the effects of RF-EMF on eNSCs is important for exploring the effects of RF-EMF on brain development. Here, we exposed eNSCs to 1800 MHz RF-EMF at specific absorption rate (SAR) values of 1, 2, and 4 W/kg for 1, 2, and 3 days. We found that 1800 MHz RF-EMF exposure did not influence eNSC apoptosis, proliferation, cell cycle or the mRNA expressions of related genes. RF-EMF exposure also did not alter the ratio of eNSC differentiated neurons and astrocytes. However, neurite outgrowth of eNSC differentiated neurons was inhibited after 4 W/kg RF-EMF exposure for 3 days. Additionally, the mRNA and protein expression of the proneural genes Ngn1 and NeuroD, which are crucial for neurite outgrowth, were decreased after RF-EMF exposure. The expression of their inhibitor Hes1 was upregulated by RF-EMF exposure. These results together suggested that 1800 MHz RF-EMF exposure impairs neurite outgrowth of eNSCs. More attention should be given to the potential adverse effects of RF-EMF exposure on brain development. PMID:24869783

A cooperation and competition based simple cell receptive field model and study of feed-forward linear and nonlinear contributions to orientation selectivity.

PubMed

Bhaumik, Basabi; Mathur, Mona

2003-01-01

We present a model for development of orientation selectivity in layer IV simple cells. Receptive field (RF) development in the model, is determined by diffusive cooperation and resource limited competition guided axonal growth and retraction in geniculocortical pathway. The simulated cortical RFs resemble experimental RFs. The receptive field model is incorporated in a three-layer visual pathway model consisting of retina, LGN and cortex. We have studied the effect of activity dependent synaptic scaling on orientation tuning of cortical cells. The mean value of hwhh (half width at half the height of maximum response) in simulated cortical cells is 58 degrees when we consider only the linear excitatory contribution from LGN. We observe a mean improvement of 22.8 degrees in tuning response due to the non-linear spiking mechanisms that include effects of threshold voltage and synaptic scaling factor.

A theoretical model of the application of RF energy to the airway wall and its experimental validation.

PubMed

Jarrard, Jerry; Wizeman, Bill; Brown, Robert H; Mitzner, Wayne

2010-11-27

Bronchial thermoplasty is a novel technique designed to reduce an airway's ability to contract by reducing the amount of airway smooth muscle through controlled heating of the airway wall. This method has been examined in animal models and as a treatment for asthma in human subjects. At the present time, there has been little research published about how radiofrequency (RF) energy and heat is transferred to the airways of the lung during bronchial thermoplasty procedures. In this manuscript we describe a computational, theoretical model of the delivery of RF energy to the airway wall. An electro-thermal finite-element-analysis model was designed to simulate the delivery of temperature controlled RF energy to airway walls of the in vivo lung. The model includes predictions of heat generation due to RF joule heating and transfer of heat within an airway wall due to thermal conduction. To implement the model, we use known physical characteristics and dimensions of the airway and lung tissues. The model predictions were tested with measurements of temperature, impedance, energy, and power in an experimental canine model. Model predictions of electrode temperature, voltage, and current, along with tissue impedance and delivered energy were compared to experiment measurements and were within ± 5% of experimental averages taken over 157 sample activations.The experimental results show remarkable agreement with the model predictions, and thus validate the use of this model to predict the heat generation and transfer within the airway wall following bronchial thermoplasty. The model also demonstrated the importance of evaporation as a loss term that affected both electrical measurements and heat distribution. The model predictions showed excellent agreement with the empirical results, and thus support using the model to develop the next generation of devices for bronchial thermoplasty. Our results suggest that comparing model results to RF generator electrical measurements may be a useful tool in the early evaluation of a model.

High Voltage Guided Pulmonary Vein Isolation in Paroxysmal Atrial Fibrillation.

PubMed

Boles, Usama; Gul, Enes E; Enriquez, Andres; Lee, Howard; Riegert, Dave; Andres, Adrian; Baranchuk, Adrian; Redfearn, Damian; Glover, Benedict; Simpson, Chris; Abdollah, Hoshiar; Michael, Kevin

2017-01-01

Ablation of the pulmonary vein (PV) antrum using an electroanatomic mapping system is standard of care for point-by-point pulmonary vein isolation (PVI). Focused ablation at critical areas is more likely to achieve intra-procedural PV isolation and decrease the likelihood for reconnection and recurrence of atrial fibrillation (AF). Therefore this prospective pilot study is to investigate the short-term outcome of a voltage-guided circumferential PV ablation (CPVA) strategy. We recruited patients with a history of paroxysmal atrial fibrillation (AF). The EnSite NavX system (St. Jude Medical, St Paul, Minnesota, USA) was employed to construct a three-dimensional geometry of the left atrium (LA) and voltage map. CPVA was performed; with radiofrequency (RF) targeting sites of highest voltage first in a sequential clockwise fashion then followed by complete the gaps in circumferential ablation. Acute and short-term outcomes were compared to a control group undergoing conventional standard CPVA using the same 3D system. Follow-up was scheduled at 3, 6 and 12 months. Thirty-four paroxysmal AF patients with a mean age of 40 years were included. Fourteen patients (8 male) underwent voltage mapping and 20 patients underwent empirical, non-voltage guided standard CPVA. A mean of 54 ± 12 points per PV antrum were recorded. Mean voltage for right and left PVs antra were 1.7±0.1 mV and 1.9±0.2 mV, respectively. There was a trend towards reduced radiofrequency time (40.9±17.4 vs. 48.1±15.5 mins; p=0.22). Voltage-guided CPVA is a promising strategy in targeting critical points for PV isolation with a lower trend of AF recurrence compared with a standard CPVA in short-term period. Extended studies to confirm these findings are warranted.

Characterization and reduction of gradient-induced eddy currents in the RF shield of a TEM resonator.

PubMed

Alecci, Marcello; Jezzard, Peter

2002-08-01

Radiofrequency (RF) shields that surround MRI transmit/receive coils should provide effective RF screening, without introducing unwanted eddy currents induced by gradient switching. Results are presented from a detailed examination of an effective RF shield design for a prototype transverse electromagnetic (TEM) resonator suitable for use at 3 Tesla. It was found that effective RF shielding and low eddy current sensitivity could be achieved by axial segmentation (gap width = 2.4 mm) of a relatively thick (35 microm) copper shield, etched on a kapton polyimide substrate. This design has two main advantages: first, it makes the TEM less sensitive to the external environment and RF interference; and second, it makes the RF shield mechanically robust and easy to handle and assemble. Copyright 2002 Wiley-Liss, Inc.

IRIS TOXICOLOGICAL REVIEW AND SUMMARY DOCUMENTS FOR TETRACHLOROETHYLENE

EPA Science Inventory

The known toxic effects of perchloroethylene will be summarized, with citations from current scientific literature. The critical effects will be identified, and from this the RfD and RfC and cancer unit risk factors will be derived. The RfD and RfC are reference doses and air c...

Precise Heater Controller with rf-Biased Josephson Junctions

NASA Technical Reports Server (NTRS)

Green, Colin J.; Sergatskov, Dmitri A.; Duncan, R. V.

2003-01-01

Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

Multi-Pass Quadrupole Mass Analyzer

NASA Technical Reports Server (NTRS)

Prestage, John D.

2013-01-01

Analysis of the composition of planetary atmospheres is one of the most important and fundamental measurements in planetary robotic exploration. Quadrupole mass analyzers (QMAs) are the primary tool used to execute these investigations, but reductions in size of these instruments has sacrificed mass resolving power so that the best present-day QMA devices are still large, expensive, and do not deliver performance of laboratory instruments. An ultra-high-resolution QMA was developed to resolve N2 +/CO+ by trapping ions in a linear trap quadrupole filter. Because N2 and CO are resolved, gas chromatography columns used to separate species before analysis are eliminated, greatly simplifying gas analysis instrumentation. For highest performance, the ion trap mode is used. High-resolution (or narrow-band) mass selection is carried out in the central region, but near the DC electrodes at each end, RF/DC field settings are adjusted to allow broadband ion passage. This is to prevent ion loss during ion reflection at each end. Ions are created inside the trap so that low-energy particles are selected by low-voltage settings on the end electrodes. This is beneficial to good mass resolution since low-energy particles traverse many cycles of the RF filtering fields. Through Monte Carlo simulations, it is shown that ions are reflected at each end many tens of times, each time being sent back through the central section of the quadrupole where ultrahigh mass filtering is carried out. An analyzer was produced with electrical length orders of magnitude longer than its physical length. Since the selector fields are sized as in conventional devices, the loss of sensitivity inherent in miniaturizing quadrupole instruments is avoided. The no-loss, multi-pass QMA architecture will improve mass resolution of planetary QMA instruments while reducing demands on the RF electronics for high-voltage/high-frequency production since ion transit time is no longer limited to a single pass. The QMA-based instrument will thus give way to substantial reductions of the mass of flight instruments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Ashutosh, E-mail: asingh.rs.ece@iitbhu.ac.in; Center of Research in Microwave Tubes, Department of Electronics Engineering, Indian Institute of Technology; Jain, P. K.

In this paper, the effects of electron beam parameters and velocity spread on the RF behavior of a metallic photonic band gap (PBG) cavity gyrotron operating at 35 GHz with TE{sub 041}–like mode have been theoretically demonstrated. PBG cavity is used here to achieve a single mode operation of the overmoded cavity. The nonlinear time-dependent multimode analysis has been used to observe the beam-wave interaction behavior of the PBG cavity gyrotron, and a commercially available PIC code “CST Particle Studio” has been reconfigured to obtain 3D simulation results in order to validate the analytical values. The output power for this typicalmore » PBG gyrotron has been obtained ∼108 kW with ∼15.5% efficiency in a well confined TE{sub 041}–like mode, while all other competing modes have significantly low values of power output. The output power and efficiency of a gyrotron depend highly on the electron beam parameters and velocity spread. The influence of several electron beam parameters, e.g., beam voltage, beam current, beam velocity pitch factor, and DC magnetic field, on the PBG gyrotron operations has been investigated. This study would be helpful in optimising the electron beam parameters and estimating accurate RF output power of the high frequency PBG cavity based gyrotron oscillators.« less

Study of G-S/D underlap for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model

NASA Astrophysics Data System (ADS)

Maity, Subir Kumar; Pandit, Soumya

2017-01-01

InGaAs (and its variant) appears to be a promising channel material for high-performance, low-power scaled CMOS applications due to its excellent carrier transport properties. However, MOS transistors made of this suffer from poor electrostatic integrity. In this work, we consider an underlap ultra thin body (UTB) InAs-on-Insulator n-channel MOS transistor, and study the effect of varying the gate-source/drain (G-S/D) underlap length on the analog performance of the device with the help of technology computer-aided design (TCAD) simulation, calibrated with Schrodinger-Poisson solver and experimental results. The underlap technique improves the gate electrostatic integrity which in turn improves the analog performance. We develop a non-quasi-static (NQS) small signal equivalent circuit model of the device which is used for study of the RF performance. With increase of the underlap length, the unity gain cut-off frequency degrades and the maximum oscillation frequency improves beyond a certain value of the underlap length. We further study the gain-frequency response of a common source amplifier using the NQS model, through SPICE simulation and observe that the voltage gain and the gain bandwidth improves.

Evaluation of stray radiofrequency radiation emitted by electrosurgical devices

NASA Astrophysics Data System (ADS)

DeMarco, M.; Maggi, S.

2006-07-01

Electrosurgery refers to the passage of a high-frequency, high-voltage electrical current through the body to achieve the desired surgical effects. At the same time, these procedures are accompanied by a general increase of the electromagnetic field in an operating room that may expose both patients and personnel to relatively high levels of radiofrequency radiation. In the first part of this study, we have taken into account the radiation emitted by different monopolar electrosurgical devices, evaluating the electromagnetic field strength delivered by an electrosurgical handle and straying from units and other electrosurgical accessories. As a summary, in the worst case a surgeon's hands are exposed to a continuous and pulsed RF wave whose magnetic field strength is 0.75 A m-1 (E-field 400 V m-1). Occasionally stray radiation may exceed ICNIRP's occupational exposure guidelines, especially close to the patient return plate. In the second part of this paper, we have analysed areas of particular concern to prevent electromagnetic interference with some life-support devices (ventilators and electrocardiographic devices), which have failed to operate correctly. Most clinically relevant interference occurred when an electrosurgery device was used within 0.3 m of medical equipment. In the appendix, we suggest some practical recommendations intended to minimize the potential for electromagnetic hazards due to therapeutic application of RF energy.