Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

PubMed Central

Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

2015-01-01

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32–42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0–0.9 V, 0.9–1.95 V, and 1.95–3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices. PMID:26504215

Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

DOE PAGES

Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

2015-10-26

Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32–42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0–0.9 V, 0.9–1.95 V, and 1.95–3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO 2 reduction on silver and coppermore » cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H 2 and CO) and Hythane (H 2 and CH 4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. Finally, we show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C 2H 4 have high profitability indices.« less

Possible microplate generation at RRR triple junctions due to the non-circular finite motion of plates relative to each other

NASA Astrophysics Data System (ADS)

Cronin, V. S.

2012-12-01

First generation ideas of the kinematic stability of triple junctions lead to the common belief that the geometry of ridge-ridge-ridge (RRR) triple junctions remains constant over time under conditions of symmetric spreading. Given constant relative motion between each plate pair -- that is, the pole of plate relative motion is fixed to both plates in each pair during finite motion, as assumed in many accounts of plate kinematics -- there would be no boundary mismatch at the triple junction and no apparent kinematic reason why a microplate might develop there. But if, in a given RRR triple junction, the finite motion of one plate as observed from the other plate is not circular (as is generally the case, given the three-plate problem of plate kinematics), the geometry of the ridges and the triple junction will vary with time (Cronin, 1992, Tectonophys 207, 287-301). To explore the possible consequences of non-circular finite motion between plates at an RRR triple junction, a simple model was coded based on the cycloid finite-motion model (e.g., Cronin, 1987, Geology 15, 1006-1009) using NNR-MORVEL56 velocities for individual plates (Argus et al., 2011, G3 12, doi: 10.1029/2011GC003751). Initial assumptions include a spherical Earth, symmetric spreading, and constant angular velocities during the modeled finite time interval. The assumed-constant angular velocity vectors constitute a reference frame for observing finite plate motion. Typical results are [1] that the triple junction migrates relative to a coordinate system fixed to the angular-velocity vectors, [2] ridge axes rotates relative to each other, and [3] a boundary mismatch develops at the synthetic triple junction that might result in microplate nucleation. In a model simulating the Galapagos triple junction between the Cocos, Nazca and Pacific plates whose initial state did not include the Galapagos microplate, the mismatch gap was as much as ~3.4 km during 3 Myr of model displacement (see figure). The centroid of the synthetic triple junction translates ~81 km toward azimuth ~352° in 3 Myr. Of course, the details will vary as different angular velocity vectors are used; however, modeling indicates that non-circular finite relative motion between adjacent plates generally results in boundary mismatches and rotation of ridge segments relative to each other at RRR triple junctions. Left: synthetic Galapagos triple junction at initial model time, without a microplate. Right: synthetic triple junction after 3 Myr displacement, illustrating the resulting boundary mismatch (gap) and rotated ridge axes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S.

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate withmore » a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.« less

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

2005-01-01

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

Enhanced performance of a structured cyclo olefin copolymer-based amorphous silicon solar cell

NASA Astrophysics Data System (ADS)

Zhan, Xinghua; Chen, Fei; Gao, Mengyu; Tie, Shengnian; Gao, Wei

2017-07-01

The submicron array was fabricated onto a cyclo olefin copolymer (COC) film by a hot embossing method. An amorphous silicon p-i-n junction and transparent conductive layers were then deposited onto it through a plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering. The efficiency of the fabricated COC-based solar cell was measured and the result demonstrated 18.6% increase of the solar cell efficiency when compared to the sample without array structure. The imprinted polymer solar cells with submicron array indeed increase their efficiency.

The Evolution of the Indian Ocean Triple Junction and the Finite Rotation Problem.

DTIC Science & Technology

1980-09-01

AD-AG&9 103 ~S HOLE OCEANOGRAPHIC INSTITUTION MASS F/6 6/7 THE EVOLUTION OF THE INDIAN OCEAN TRIPLE JUNCTION AND THE FINIT-ETC(U1 SEP 80 C R TAPSCOTT...1111flfl 1.4 111116 MICROCOPY RESOLUTION TEST CHART WHOI-80-37 THE EVOLUTION OF THE INDIAN OCEAN TRIPLE JUNCTION AND THE FINITE ROTATION PROBLEM by...purpose of the United States Government. This thesis should be cited as: Christopher R. Tapscott, 1979. The Evolution of the Indian Ocean Triple Junction

Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

PubMed

Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

2017-03-29

We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Migration of grain boundaries and triple junctions in high-purity aluminum during annealing after slight cold rolling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Wenhong; School of Mechanical Engineering, Shandong University of Technology, Zibo 255049; Wang, Weiguo, E-mail: wang_weiguo@vip.163.com

Grain orientations and grain boundary migrations near triple junctions in a high purity aluminum were analyzed by electron back scattered diffraction. The results indicate that there are good correlations between the Schmid factors or Taylor factors and the misorientation values of point to original point in grains near the triple junctions in a slightly deformed sample. Grains with higher Schmid factors or lower Taylor factors typically correspond to higher misorientation values near the triple junctions. In a subsequent annealing at 400 °C, both grain boundaries and triple junctions migrate, but the former leave ghost lines. During such migration, a grainmore » boundary grows from the grain with lower Schmid factor (higher Taylor factor) into the grain with higher Schmid factor (lower Taylor factor). Usually, the amount of migration of a grain boundary is considerably greater than that of a triple junction, and the grain boundary becomes more curved after migration. These observations indicate that the triple junctions have drag effects on grain boundary migration. - Highlights: • Polycrystalline aluminum with fine grains about 30 μm were used. • Off-line in situ EBSD was used to identify TJs before and after annealing. • Grains with higher SFs have higher misorientation values near TJs after deformation. • Grain boundaries grow from hard grains into soft grains during annealing. • Triple junctions have drag effects on grain boundaries migration.« less

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

1990-01-01

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Tectonic Evolution of the Jurassic Pacific Plate

NASA Astrophysics Data System (ADS)

Nakanishi, M.; Ishihara, T.

2015-12-01

We present the tectonic evolution of the Jurassic Pacific plate based on magnetic anomly lineations and abyssal hills. The Pacific plate is the largest oceanic plate on Earth. It was born as a microplate aroud the Izanagi-Farallon-Phoenix triple junction about 192 Ma, Early Jurassic [Nakanishi et al., 1992]. The size of the Pacific plate at 190 Ma was nearly half that of the present Easter or Juan Fernandez microplates in the East Pacific Rise [Martinez et at, 1991; Larson et al., 1992]. The plate boundary surrounding the Pacific plate from Early Jurassic to Early Cretaceous involved the four triple junctions among Pacific, Izanagi, Farallon, and Phoenix plates. The major tectonic events as the formation of oceanic plateaus and microplates during the period occurred in the vicinity of the triple junctions [e.g., Nakanishi and Winterer, 1998; Nakanishi et al., 1999], implying that the study of the triple junctions is indispensable for understanding the tectonic evolution of the Pacific plate. Previous studies indicate instability of the configuration of the triple junctions from Late Jurassic to Early Cretaceous (155-125 Ma). On the other hand, the age of the birth of the Pacific plate was determined assuming that all triple junctions had kept their configurations for about 30 m.y. [Nakanishi et al., 1992] because of insufficient information of the tectonic history of the Pacific plate before Late Jurassic.Increase in the bathymetric and geomagnetic data over the past two decades enables us to reveal the tectonic evolution of the Pacific-Izanagi-Farallon triple junction before Late Jurassic. Our detailed identication of magnetic anomaly lineations exposes magnetic bights before anomaly M25. We found the curved abyssal hills originated near the triple junction, which trend is parallel to magnetic anomaly lineations. These results imply that the configuration of the Pacific-Izanagi-Farallon triple junction had been RRR before Late Jurassic.

Transition from slab to slabless: Results from the 1993 Mendocino triple junction seismic experiment

USGS Publications Warehouse

Beaudoin, B.C.; Godfrey, N.J.; Klemperer, S.L.; Lendl, C.; Trehu, A.M.; Henstock, T.J.; Levander, A.; Holl, J.E.; Meltzer, A.S.; Luetgert, J.H.; Mooney, W.D.

1996-01-01

Three seismic refraction-reflection profiles, part of the Mendocino triple junction seismic experiment, allow us to compare and contrast crust and upper mantle of the North American margin before and after it is modified by passage of the Mendocino triple junction. Upper crustal velocity models reveal an asymmetric Great Valley basin overlying Sierran or ophiolitic rocks at the latitude of Fort Bragg, California, and overlying Sierran or Klamath rocks near Redding, California. In addition, the upper crustal velocity structure indicates that Franciscan rocks underlie the Klamath terrane east of Eureka, California. The Franciscan complex is, on average, laterally homogeneous and is thickest in the triple junction region. North of the triple junction, the Gorda slab can be traced 150 km inboard from the Cascadia subduction zone. South of the triple junction, strong precritical reflections indicate partial melt and/or metamorphic fluids at the base of the crust or in the upper mantle. Breaks in these reflections are correlated with the Maacama and Bartlett Springs faults, suggesting that these faults extend at least to the mantle. We interpret our data to indicate tectonic thickening of the Franciscan complex in response to passage of the Mendocino triple junction and an associated thinning of these rocks south of the triple junction due to assimilation into melt triggered by upwelling asthenosphere. The region of thickened Franciscan complex overlies a zone of increased scattering, intrinsic attenuation, or both, resulting from mechanical mixing of lithologies and/or partial melt beneath the onshore projection of the Mendocino fracture zone. Our data reveal that we have crossed the southern edge of the Gorda slab and that this edge and/or the overlying North American crust may have fragmented because of the change in stress presented by the edge.

Reappraisal of the Arabia-India-Somalia triple junction kinematics

NASA Astrophysics Data System (ADS)

Fournier, Marc; Patriat, Philippe; Leroy, Sylvie

2001-07-01

We propose alternative kinematics for the Arabia-India-Somalia triple junction based on a re-interpretation of seismological and magnetic data. The new triple junction of the ridge-ridge-ridge type is located at the bend of the Sheba Ridge in the eastern gulf of Aden at 14.5°N and 56.4°E. The Owen fracture zone (Arabia-India boundary) is connected to the Sheba Ridge by an ultra-slow divergent boundary trending N80°E±10° marked by diffuse seismicity. The location of the Arabia-India rotation pole is constrained at 14.1°N and 71.2°E by fitting the active part of the Owen fracture zone with a small circle. The finite kinematics of the triple junction is inferred from the present-day kinematics. Since the inception of the accretion 15-18 Ma ago, the Sheba Ridge has probably receded ∼300 km at the expense of the Carlsberg Ridge which propagated northwestward in the gulf of Aden, while an ultra-slow divergent plate boundary developed between the Arabian and Indian plates. The overall geometry of the new triple junction is very similar to that of the Azores triple junction.

Ultrastable Nontoxic RNA Nanoparticles for Targeting Triple-Negative Breast Cancer Stem Cells

DTIC Science & Technology

2016-04-01

delivery system to meet the urgent need of efficient strategies for the treatment of breast cancer. 15. SUBJECT TERMS RNA nanotechnology ; three-way...construct a new generation of drugs composed purely of RNA (Nature Nanotechnology , 2011, 6: 658; Nano Today, 2012, 7: 245). Our goal is to apply our...anti-proliferative, anti-invasive and anti- metastasis properties. 2. KEYWORDS: RNA nanotechnology ; three-way junction; RNA aptamer; miRNA; triple

Electron microscopy of a Gd-Ba-Cu-O superconductor

NASA Technical Reports Server (NTRS)

Ramesh, R.; Thomas, G.; Meng, R. L.; Hor, P. H.; Chu, C. W.

1989-01-01

An electron microscopy study has been carried out to characterize the microstructure of a sintered Gd-Ba-Cu-O superconductor alloy. The GdBa2Cu3O(7-x) phase in the oxygen annealed sample is orthorhombic, while in the vacuum annealed sample it is tetragonal. It is shown that the details of the fine structure in the 001-line zone axis convergent beam patterns can be used to distinguish between the orthorhombic form and the tetragonal form. In addition to this matrix phase, an amorphous phase is frequently observed at the triple grain junctions. Gd-rich inclusions have been observed inside the matrix phase.

Large-area triple-junction a-Si alloy production scaleup. Annual subcontract report, 17 March 1993--18 March 1994

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oswald, R.; Morris, J.

1994-11-01

The objective of this subcontract over its three-year duration is to advance Solarex`s photovoltaic manufacturing technologies, reduce its a-Si:H module production costs, increase module performance and expand the Solarex commercial production capacity. Solarex shall meet these objectives by improving the deposition and quality of the transparent front contact, by optimizing the laser patterning process, scaling-up the semiconductor deposition process, improving the back contact deposition, scaling-up and improving the encapsulation and testing of its a-Si:H modules. In the Phase 2 portion of this subcontract, Solarex focused on improving deposition of the front contact, investigating alternate feed stocks for the front contact,more » maximizing throughput and area utilization for all laser scribes, optimizing a-Si:H deposition equipment to achieve uniform deposition over large-areas, optimizing the triple-junction module fabrication process, evaluating the materials to deposit the rear contact, and optimizing the combination of isolation scribe and encapsulant to pass the wet high potential test. Progress is reported on the following: Front contact development; Laser scribe process development; Amorphous silicon based semiconductor deposition; Rear contact deposition process; Frit/bus/wire/frame; Materials handling; and Environmental test, yield and performance analysis.« less

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

PubMed

Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

2015-01-01

An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Triple Junctions, Boninites, and a New Microplate in the Western Pacific

NASA Astrophysics Data System (ADS)

Flores, J. A.; Casey, J.

2017-12-01

A new microplate has been discovered while trying to correlate melting processes in subduction zones that are forming boninites along the southern Mariana Plate. The westward boundary between the Mariana plate and the Philippine Sea plate is along a well-defined back-arc spreading center. The southern extension of this spreading center to the intersection with the Mariana Trench does not have a recognized morphological boundary. Previous work has hypothesized that subduction beneath a spreading center provides conditions required for boninite petrogenesis. Therefore, the exact location of the trench-trench-ridge triple junction needs to be found and correlated with known boninite locations. The triple junction was found using fault plane solutions to constrain the southern boundary of the two plates as it transects across the forearc. Normal faults suggest the triple junction to be at approximately 11.9N 144.1W; slip direction of reverse faults associated with the subducting plate are dominantly north-south west of this junction and northwest-southeast on the east side. While locating the southern boundary, the nucleation of a new spreading center that creates a ridge-ridge-ridge triple junction was found. The main spreading center trends mostly north-south until about 12.5N 143W, where two other spreading centers meet. The western spreading zone trends mostly east-west and seems to be in its infancy whereas there is another spreading center trending northwest-southeast. It is this last spreading center that forms the trench-ridge-trench triple junction. Discovery of these triple junctions isolates a piece of lithosphere that we interpret to be a new microplate that we name the Challenger Microplate.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Dilute Nitrides For 4-And 6- Junction Space Solar Cells

NASA Astrophysics Data System (ADS)

Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

2011-10-01

According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

NASA Technical Reports Server (NTRS)

Beernink, Kevin; Guha, Subhendu; Yang, Jeff; Banerjee, Arindam; Lord, Ken; DeMaggio, Greg; Liu, Frank; Pietka, Ginger; Johnson, Todd; Reinhout, Melanie;

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

NASA Technical Reports Server (NTRS)

Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

2008-01-01

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Distributed deformation ahead of the Cocos-Nazca Rift at the Galapagos triple junction

NASA Astrophysics Data System (ADS)

Smith, Deborah K.; Schouten, Hans; Zhu, Wen-lu; Montési, Laurent G. J.; Cann, Johnson R.

2011-11-01

The Galapagos triple junction is not a simple ridge-ridge-ridge (RRR) triple junction. The Cocos-Nazca Rift (C-N Rift) tip does not meet the East Pacific Rise (EPR). Instead, two secondary rifts form the link: Incipient Rift at 2°40‧N and Dietz Deep volcanic ridge, the southern boundary of the Galapagos microplate (GMP), at 1°10‧N. Recently collected bathymetry data are used to investigate the regional tectonics prior to the establishment of the GMP (∼1.5 Ma). South of C-N Rift a band of northeast-trending cracks cuts EPR-generated abyssal hills. It is a mirror image of a band of cracks previously identified north of C-N Rift on the same age crust. In both areas, the western ends of the cracks terminate against intact abyssal hills suggesting that each crack initiated at the EPR spreading center and cut eastward into pre-existing topography. Each crack formed a short-lived triple junction until it was abandoned and a new crack and triple junction initiated nearby. Between 2.5 and 1.5 Ma, the pattern of cracking is remarkably symmetric about C-N Rift providing support for a crack interaction model in which crack initiation at the EPR axis is controlled by stresses associated with the tip of the westward-propagating C-N Rift. The model also shows that offsets of the EPR axis may explain times when cracking is not symmetric. South of C-N Rift, cracks are observed on seafloor as old as 10.5 Ma suggesting that this triple junction has not been a simple RRR triple junction during that time.

Simulation of the Mars Surface Solar Spectra for Optimized Performance of Triple-Junction Solar Cells

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, RIchard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

2007-01-01

The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five. This provides confidence in future longer-term solar powered missions on the surface of Mars. However, the solar cells used on the rovers are not optimized for the Mars surface solar spectrum, which is attenuated at shorter wavelengths due to scattering by the dusty atmosphere. The difference between the Mars surface spectrum and the AM0 spectrum increases with solar zenith angle and optical depth. The recent results of a program between JPL and Spectrolab to optimize GaInP/GaAs/Ge solar cells for Mars are presented. Initial characterization focuses on the solar spectrum at 60-degrees zenith angle at an optical depth of 0.5. The 60-degree spectrum is reduced to 1/6 of the AM0 intensity and is further reduced in the blue portion of the spectrum. JPL has modeled the Mars surface solar spectra, modified an X-25 solar simulator, and completed testing of Mars-optimized solar cells previously developed by Spectrolab with the modified X-25 solar simulator. Spectrolab has focused on the optimization of the higher efficiency Ultra Triple-Junction (UTJ) solar cell for Mars. The attenuated blue portion of the spectrum requires the modification of the top sub-cell in the GaInP/GaAs/Ge solar cell for improved current balancing in the triple-junction cell. Initial characterization confirms the predicted increase in power and current matched operation for the Mars surface 60-degree zenith angle solar spectrum.

High voltage series connected tandem junction solar battery

DOEpatents

Hanak, Joseph J.

1982-01-01

A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

The reliability and stability of multijunction amorphous silicon PV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlson, D.E.

1995-11-01

Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies aremore » about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.« less

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Development, Qualification and Production of Space Solar Cells with 30% EOL Efficiency

NASA Astrophysics Data System (ADS)

Guter, Wolfgang; Ebel, Lars; Fuhrmann, Daniel; Kostler, Wolfgang; Meusel, Matthias

2014-08-01

AZUR SPACE's latest qualified solar cell product 3G30-advanced provides a high end-of-life (EOL) efficiency of 27.8% for 5E14 (1 MeV e-/cm2) at low production costs. In order to further reduce the mass, the 3G30-advanced was thinned down to as thin as 20 μm and tested in space. Next generation solar cells must exceed the EOL efficiency of the 3G30-advanced and therefore will utilize the excess current of the Ge subcell. This can be achieved by a metamorphic cell concept. While average beginning-of-life efficiencies above 31% have already been demonstrated with upright metamorphic triple-junction cells, AZUR's next generation product will comprise a metamorphic 4- junction device targeting 30% EOL.

Thermodynamic characterization of a triple-helical three-way junction containing a Hoogsteen branch point.

PubMed

Hüsler, P L; Klump, H H

1995-09-10

We have designed a Hoogsteen (HG) triple-helical three-way junction (ternary complex) constructed from three 33-mer oligonucleotides based on the same subset of sequences used for the Watson-Crick (WC) triple-helical three-way junction, characterized previously (P. L. Hüsler and H. H. Klump (1994) Arch. Biochem. Biophys., 313, 29-38). The junction differs primarily in the assembly of the branch point and the ends of the arms. The three oligonucleotides can each fold into a WC hairpin, linked by a four-member cytosine loop, each containing a homo-pyrimidine 10-mer single-strand extension. On lowering the pH (between 6 and 4), the extensions mutually associate to one of the other hairpins via Hoogsteen (HG) hydrogen bonding. Collectively, this process results in the formation of the branch point and the triple-helical arms. The HG triple-helical three-way junction is characterized by gel electrophoresis, circular dichroism, uv melting, and differential scanning calorimetry. The junction undergoes thermal unfolding in two distinct temperature regions. In the temperature range 15 to 50 degrees C loss of HG base pairing results in the dissociation of the three-way junction. Between 55 and 95 degrees C the resulting hairpins undergo further successive unfolding. The overall calorimetric unfolding enthalpy and entropy changes associated with the loss of HG base pairing are approximately equal to the sum of the enthalpy and entropy changes associated with the dissociation of the HG base pairing in the isolated arms (170.6 kcal.mol-1; 540.1 cal.mol-1.K-1). It is apparent from these results that in the proximity of the branch point the structure is not perturb or strain. This result is contrary to the results obtained for the WC triple-helical three-way and for three-way junctions constructed from canonical double-helical DNA. Complete folding of the junction requires either high Na+ (600 mM) ion concentrations or 40-60 mM Mg2+.

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

NASA Technical Reports Server (NTRS)

Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2007-01-01

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-02-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR -Vbias) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR -Vbias for Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR -Vbias measurements. The profile of SR-Vbias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Progress in amorphous silicon based large-area multijunction modules

NASA Astrophysics Data System (ADS)

Carlson, D. E.; Arya, R. R.; Bennett, M.; Chen, L.-F.; Jansen, K.; Li, Y.-M.; Maley, N.; Morris, J.; Newton, J.; Oswald, R. S.; Rajan, K.; Vezzetti, D.; Willing, F.; Yang, L.

1996-01-01

Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area single- and tandem junction cells. Average initial conversion efficiencies of 8.8% at 85% yield have been obtained in pilot production runs with 4 ft2 tandem modules.

Triple Junction Reorganizations: A Mechanism for the Initiation of the Great Pacific Fractures Zones

NASA Astrophysics Data System (ADS)

Pockalny, R. A.; Larson, R. L.; Grindlay, N. R.

2001-12-01

There are two general explanations for the initiation of oceanic transform faults that eventually evolve into fracture zones: transforms inherited from continental break-up and transforms acquired in response to a change in plate motions. These models are sufficient to explain the fracture zones in oceans formed by continental break-up. However, neither model accounts for the initiation of the large-offset, great Pacific fracture zones that characterized the Pacific-Farallon plate boundary prior to 25 Ma. Primarily, these models are unable to explain why the initial age of these fracture zones becomes progressively younger from the Mendocino fracture zone (\\~{ } 160 Ma) southward down to the Resolution FZ (\\~{ }84 Ma). We propose a new transform initiation mechanism for the great Pacific fracture zones, which is intimately tied to tectonic processes at triple junctions and directly related to the growth of the Pacific Plate. Recently acquired multibeam bathymetry and marine geophysics data collected along Pandora's Escarpment in the southwestern Pacific have identified the escarpment as the trace of the Pacific-Farallon-Phoenix triple junction on the Pacific Plate. Regional changes in the trend of the triple junction trace between 84-121 Ma roughly coincide with the initiation of the Marquesas, Austral and Resolution fracture zones. Bathymetry and backscatter data from the projected intersections of these fracture zones with the triple junction trace identify several anomalous structures that suggest tectonic reorganizations of the triple junction. We believe this reorganization created the initial transform fault(s) that ultimately became the large-offset, great Pacific fracture zones. Several possible mechanisms for initiating the transform faults are explored including microplate formation, ridge-tip propagation, and spontaneous transform fault formation.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Head, J.; Turner, J.A.

2006-01-01

Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable ofmore » splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.« less

Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays.

PubMed

Tex, David M; Nakamura, Tetsuya; Imaizumi, Mitsuru; Ohshima, Takeshi; Kanemitsu, Yoshihiko

2017-05-16

Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of tandem solar cells. Here, the radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage (I-V) measurements and time-resolved photoluminescence (PL). The conversion efficiencies of the entire device before and after damage are measured with I-V curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data the change in the carrier dynamics in the subcells can be discussed. Our optical method allows to predict the absolute electrical conversion efficiency of the device with an accuracy of better than 5%. While both InGaP and GaAs subcells suffered from significant material degradation, the performance loss of the total device can be completely ascribed to the damage in the GaAs subcell. This points out the importance of high internal electric fields at the operating point.

Simulation of the Mars surface solar spectra for optimized performance of triple junction solar cells

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, Richard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert

2005-01-01

The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five.

Surface Breakdown Characteristics of Silicone Oil for Electric Power Apparatus

NASA Astrophysics Data System (ADS)

Wada, Junichi; Nakajima, Akitoshi; Miyahara, Hideyuki; Takuma, Tadasu; Okabe, Shigemitu; Kohtoh, Masanori; Yanabu, Satoru

This paper describes the surface breakdown characteristics of the silicone oil which has the possibility of the application to innovative switchgear as an insulating medium. At the first step, we have experimentally studied on the impulse breakdown characteristics of the configuration with a triple-junction where a solid insulator is in contact with the electrode. The test configurations consist of solid material (Nomex and pressboard) and liquid insulation oil (silicone and mineral oil). We have discussed the experimental results based on the maximal electric field at a triple-junction. As the second step, we have studied the configuration which may improve the surface breakdown characteristics by lowering the electric field near the triple-junction.

Evolution of the northern Main Ethiopian rift: birth of a triple junction

NASA Astrophysics Data System (ADS)

Wolfenden, Ellen; Ebinger, Cynthia; Yirgu, Gezahegn; Deino, Alan; Ayalew, Dereje

2004-07-01

Models for the formation of the archetypal rift-rift-rift triple junction in the Afar depression have assumed the synchronous development of the Red Sea-Aden-East African rift systems soon after flood basaltic magmatism at 31 Ma, but the timing of intial rifting in the northern sector of the East African rift system had been poorly constrained. The aims of our field, geochronology, and remote sensing studies were to determine the timing and kinematics of rifting in the 3rd arm, the Main Ethiopian rift (MER), near its intersection with the southern Red Sea rift. New structural data and 10 new SCLF 40Ar/39Ar dates show that extension in the northern Main Ethiopian rift commenced after 11 Ma, more than 17 My after initial rifting in the southern Red Sea and Gulf of Aden. The triple junction, therefore, could have developed only during the past 11 My, or 20 My after the flood basaltic magmatism. Thus, the flood basaltic magmatism and separation of Arabia from Africa are widely separated in time from the opening of the Main Ethiopian rift, which marks the incipient Nubia-Somalia plate boundary; triple junction formation is not a primary feature of breakup above the Afar mantle plume. The East African rift system appears to have propagated northward from the Mesozoic Anza rift system into the Afar depression to cut across Oligo-Miocene rift structures of the Red Sea and Gulf of Aden, in response to global plate reorganisations. Structural patterns reveal a change from 130°E-directed extension to 105°E-directed extension sometime in the interval 6.6 to 3 Ma, consistent with predictions from global plate kinematic studies. The along-axis propagation of rifting in each of the three arms of the triple junction has led to a NE-migration of the triple junction since 11 Ma.

State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III-V Heterostructures for Space and Terrestrial Applications

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Andreev, V. M.; Shvarts, M. Z.; Pchelyakov, O. P.

2018-03-01

Multi-junction solar cells based on III-V compounds are the most efficient converters of solar energy to electricity and are widely used in space solar arrays and terrestrial photovoltaic modules with sunlight concentrators. All modern high-efficiency III-V solar cells are based on the long-developed triple-junction III-V GaInP/GaInAs/Ge heterostructure and have an almost limiting efficiency for a given architecture — 30 and 41.6% for space and terrestrial concentrated radiations, respectively. Currently, an increase in efficiency is achieved by converting from the 3-junction to the more efficient 4-, 5-, and even 6-junction III-V architectures: growth technologies and methods of post-growth treatment of structures have been developed, new materials with optimal bandgaps have been designed, and crystallographic parameters have been improved. In this review, we consider recent achievements and prospects for the main directions of research and improvement of architectures, technologies, and materials used in laboratories to develop solar cells with the best conversion efficiency: 35.8% for space, 38.8% for terrestrial, and 46.1% for concentrated sunlight. It is supposed that by 2020, the efficiency will approach 40% for direct space radiation and 50% for concentrated terrestrial solar radiation. This review considers the architecture and technologies of solar cells with record-breaking efficiency for terrestrial and space applications. It should be noted that in terrestrial power plants, the use of III-V SCs is economically advantageous in systems with sunlight concentrators.

InAlAs photovoltaic cell design for high device efficiency

DOE PAGES

Smith, Brittany L.; Bittner, Zachary S.; Hellstroem, Staffan D.; ...

2017-04-17

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion lengthmore » previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.« less

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Gold atoms and dimers on amorphous SiO(2): calculation of optical properties and cavity ringdown spectroscopy measurements.

PubMed

Del Vitto, Annalisa; Pacchioni, Gianfranco; Lim, Kok Hwa; Rösch, Notker; Antonietti, Jean-Marie; Michalski, Marcin; Heiz, Ulrich; Jones, Harold

2005-10-27

We report on the optical absorption spectra of gold atoms and dimers deposited on amorphous silica in size-selected fashion. Experimental spectra were obtained by cavity ringdown spectroscopy. Issues on soft-landing, fragmentation, and thermal diffusion are discussed on the basis of the experimental results. In parallel, cluster and periodic supercell density functional theory (DFT) calculations were performed to model atoms and dimers trapped on various defect sites of amorphous silica. Optically allowed electronic transitions were calculated, and comparisons with the experimental spectra show that silicon dangling bonds [[triple bond]Si(.-)], nonbridging oxygen [[triple bond]Si-O(.-)], and the silanolate group [[triple bond]Si-O(-)] act as trapping centers for the gold particles. The results are not only important for understanding the chemical bonding of atoms and clusters on oxide surfaces, but they will also be of fundamental interest for photochemical studies of size-selected clusters on surfaces.

Superconducting analog-to-digital converter with a triple-junction reversible flip-flop bidirectional counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, G.S.

1993-07-13

A high-performance superconducting analog-to-digital converter is described, comprising: a bidirectional binary counter having n stages of triple-junction reversible flip-flops connected together in a cascade arrangement from the least significant bit (LSB) to the most significant bit (MSB) where n is the number of bits of the digital output, each triple-junction reversible flip-flop including first, second and third shunted Josephson tunnel junctions and a superconducting inductor connected in a bridge circuit, the Josephson junctions and the inductor forming upper and lower portions of the flip-flop, each reversible flip-flop being a bistable logic circuit in which the direction of the circulating currentmore » determines the state of the circuit; and means for applying an analog input current to the bidirectional counter; wherein the bidirectional counter algebraically counts incremental changes in the analog input current, increasing the binary count for positive incremental changes in the analog current and decreasing the binary count for negative incremental changes in the current, and wherein the counter does not require a gate bias, thus minimizing power dissipation.« less

Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

DOEpatents

Nelson, Scott D.

2016-05-10

A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

Applications of AMPS-1D for solar cell simulation

NASA Astrophysics Data System (ADS)

Zhu, Hong; Kalkan, Ali Kaan; Hou, Jingya; Fonash, Stephen J.

1999-03-01

The AMPS-1D PC computer program is now used by over 70 groups world-wide for detector and solar cell analysis. It has proved to be a very powerful tool in understanding device operation and physics for single crystal, poly-crystalline and amorphous structures. For example, AMPS-1D has been successful in explaining the "red kink" [1] and the "transient effect" in CdS/CIGS poly-crystalline solar cells. It has been used to show that thin film poly-Si structures, with reasonable light trapping, are capable of competitive solar cell conversion efficiencies. In the case of a-Si:H structures, it has been used, for example, to settle the discrepancies in bandgap measurement, to predict the effective QE>1 phenomenon later seen in these materials [2], to determine the relative roles of interface and bulk properties, and to point the direction toward 16% triple junction structures. In general AMPS-1D is used for cell and detector design, material parameter sensitivity studies, and parameter extraction. Recently we have shown that it can be used to determine optimum structure and light and voltage biasing conditions in the material parameter extraction function. Information on AMPS can be found at www.psu.edu/dept/AMPS/amps_web/AMPS.html and at other web sites set up by user groups.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, R.; Pocha, M.D.

1994-08-23

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, Rex; Pocha, Michael D.

1994-01-01

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

The Cape Mendocino, California, earthquakes of April 1992: Subduction at the triple junction

USGS Publications Warehouse

Oppenheimer, D.; Beroza, G.; Carver, G.; Dengler, L.; Eaton, J.; Gee, L.; Gonzalez, F.; Jayko, A.; Li, W.H.; Lisowski, M.; Magee, M.; Marshall, G.; Murray, M.; McPherson, R.; Romanowicz, B.; Satake, K.; Simpson, R.; Somerville, P.; Stein, R.; Valentine, D.

1993-01-01

The 25 April 1992 magnitude 7.1 Cape Mendocino thrust earthquake demonstrated that the North America—Gorda plate boundary is seismogenic and illustrated hazards that could result from much larger earthquakes forecast for the Cascadia region. The shock occurred just north of the Mendocino Triple Junction and caused strong ground motion and moderate damage in the immediate area. Rupture initiated onshore at a depth of 10.5 kilometers and propagated up-dip and seaward. Slip on steep faults in the Gorda plate generated two magnitude 6.6 aftershocks on 26 April. The main shock did not produce surface rupture on land but caused coastal uplift and a tsunami. The emerging picture of seismicity and faulting at the triple junction suggests that the region is likely to continue experiencing significant seismicity.

Grain boundary and triple junction diffusion in nanocrystalline copper

NASA Astrophysics Data System (ADS)

Wegner, M.; Leuthold, J.; Peterlechner, M.; Song, X.; Divinski, S. V.; Wilde, G.

2014-09-01

Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, , of ˜35 and ˜44 nm produced by spark plasma sintering were investigated by the radiotracer method using the 63Ni isotope. The measured diffusivities, Deff, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500ṡDgb within the temperature interval from 420 K to 470 K.

Tectonics and geology of spreading ridge subduction at the Chile Triple Junction: a synthesis of results from Leg 141 of the Ocean Drilling Program

USGS Publications Warehouse

Behrmann, J.H.; Lewis, S.D.; Cande, S.C.

1994-01-01

An active oceanic spreading ridge is being subducted beneath the South American continent at the Chile Triple Junction. This process has played a major part in the evolution of most of the continental margins that border the Pacific Ocean basin. A combination of high resolution swath bathymetric maps, seismic reflection profiles and drillhole and core data from five sites drilled during Ocean Drilling Program (ODP) Leg 141 provide important data that define the tectonic, structural and stratigraphic effects of this modern example of spreading ridge subduction. A change from subduction accretion to subduction erosion occurs along-strike of the South American forearc. This change is prominently expressed by normal faulting, forearc subsidence, oversteepening of topographic slopes and intensive sedimentary mass wasting, overprinted on older signatures of sediment accretion, overthrusting and uplift processes in the forearc. Data from drill sites north of the triple junction (Sites 859-861) show that after an important phase of forearc building in the early to late Pliocene, subduction accretion had ceased in the late Pliocene. Since that time sediment on the downgoing oceanic Nazca plate has been subducted. Site 863 was drilled into the forearc in the immediate vicinity of the triple junction above the subducted spreading ridge axis. Here, thick and intensely folded and faulted trench slope sediments of Pleistocene age are currently involved in the frontal deformation of the forearc. Early faults with thrust and reverse kinematics are overprinted by later normal faults. The Chile Triple Junction is also the site of apparent ophiolite emplacement into the South American forearc. Drilling at Site 862 on the Taitao Ridge revealed an offshore volcanic sequence of Plio-Pleistocene age associated with the Taitao Fracture Zone, adjacent to exposures of the Pliocene-aged Taitao ophiolite onshore. Despite the large-scale loss of material from the forearc at the triple junction, ophiolite emplacement produces a large topographic promontory in the forearc immediately after ridge subduction, and represents the first stage of forearc rebuilding. ?? 1994 Springer-Verlag.

A four-way junction with triple-helical arms: design, characterization, and stability.

PubMed

Makube, N; Klump, H H

2000-05-01

The formation of the four-way junction containing four triple-helical arms has been demonstrated using chemical methods (polyacrylamide gel electrophoresis and chemical footprinting using OsO(4) as a probe) and physical methods (UV absorbance melting and DSC). The junction J(T1T3) was assembled from two 20-mer purine strands and two 44-mer pyrimidine strands. To determine the contribution of the different arms to the stability of the complete structure of J(T1T3), the junction was compared to two simplified substructures, J(T1) and J(T3), respectively. Common to these complexes is the underlying double-helical four-way junction Js. Addition of Na(+) had a profound effect on stabilizing and subsequently folding the junctions into the stacked X-structures. The following results support the structure present: (i) The native polyacrylamide electrophoresis exhibits only a single band(s) corresponding to one species present when all four single strands are mixed in equal amounts. (ii) OsO(4) modifications were investigated at pH 5.0 and in the presence of 10 mM Mg(2+) and 100 mM Na(+). There is no cleavage of thymine residues at the branch point and throughout the structure. (iii) The thermal unfolding of J(T1) and J(T3) illustrates that the triple-helical arms are more stable than the double-helical arms which are contained in these junctions and that J(T1T3) with four triple-helical arms is slightly more stable than J(T1) and J(T3). (iv) The calorimetric transition enthalpies determined for the arms of J(T1T3) are comparable to those associated with the unfolding of its corresponding arms in J(T1) and J(T3). The results also illustrate that the formation of the junctions is not restricted by the pH, [Na(+)], sequence composition of the arms, and/or the loop position. Copyright 2000 Academic Press.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

NASA Astrophysics Data System (ADS)

Arya, R. R.; Carlson, D. E.; Chen, L. F.; Ganguly, G.; He, M.; Lin, G.; Middya, R.; Wood, G.; Newton, J.; Bennett, M.; Jackson, F.; Willing, F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6 Ft2 monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume

In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less

The Status and Outlook for the Photovoltaics Industry

NASA Astrophysics Data System (ADS)

Carlson, David

2006-03-01

The first silicon solar cell was made at Bell Labs in 1954, and over the following decades, shipments of photovoltaic (PV) modules increased at a rate of about 18% annually. In the last several years, the annual growth rate has increased to ˜ 35% due largely to government-supported programs in Japan and Germany. Silicon technology has dominated the PV industry since its inception, and in 2005 about 65% of all solar cells were made from polycrystalline (or multicrystalline) silicon, 24% from monocrystalline silicon and ˜ 4% from ribbon silicon. While conversion efficiencies as high as 24.7% have been obtained in the laboratory for silicon solar cells, the best efficiencies for commercial PV modules are in the range of 17 18% (the efficiency limit for a silicon solar cell is ˜ 29%). A number of companies are commercializing solar cells based on other materials such as amorphous silicon, microcrystalline silicon, cadmium telluride, copper-indium-gallium-diselenide (CIGS), gallium arsenide (and related compounds) and dye- sensitized titanium oxide. Thin film CIGS solar cells have been fabricated with conversion efficiencies as high as 19.5% while efficiencies as high as 39% have been demonstrated for a GaInP/Ga(In)As/Ge triple-junction cell operating at a concentration of 236 suns. Thin film solar cells are being used in consumer products and in some building-integrated applications, while PV concentrator systems are being tested in grid-connected arrays located in high solar insolation areas. Nonetheless, crystalline silicon PV technology is likely to dominate the terrestrial market for at least the next decade with module efficiencies > 20% and module prices of < 1/Wp expected by 2020, which in turn should allow significant penetration of the utility grid market. However, crystalline silicon solar cells may be challenged in the next decade or two by new low-cost, high performance devices based on organic materials and nanotechnology.

R&D issues in scale-up and manufacturing of amorphous silicon tandem modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arya, R.R.; Carlson, D.E.; Chen, L.F.

1999-03-01

R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6&hthinsp;Ft{sup 2} monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing. {copyright} {ital 1999 American Institute of Physics.}

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode.

PubMed

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-02-24

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films.

Quantifying strain partitioning between magmatic and amagmatic portions of the Afar triple junction of Ethiopia and Djibouti through use of contemporary and late Quaternary extension rates

NASA Astrophysics Data System (ADS)

Polun, S. G.; Hickcox, K.; Tesfaye, S.; Gomez, F. G.

2016-12-01

The central Afar rift in Ethiopia and Djibouti is a zone of accommodation between the onshore propagations of the Gulf of Aden and Red Sea oceanic spreading centers forming part of the Afar triple junction that divides the Arabia, Nubia, and Somalia plates. While extension in the onshore magmatic propagators is accommodated through magmatism and associated faulting, extension in the central Afar is accommodated solely by large and small faults. The contributions of these major faults to the overall strain budget can be well characterized, but smaller faults are more difficult to quantify. Sparse GPS data covering the region constrain the total extension budget across the diffuse triple junction zone. Late Quaternary slip rates for major faults in Hanle, Dobe, Guma, and Immino grabens were estimated using the quantitative analysis of faulted landforms. This forms a nearly complete transect from the onshore propagation of the Red Sea rift in Tendaho graben and the onshore propagation of the Gulf of Aden rift at Manda Inakir. Field surveying was accomplished using a combination of electronic distance measurer profiling and low altitude aerial surveying. Age constraints are provided from the Holocene lacustrine history or through terrestrial cosmogenic nuclide (TCN) dating of the faulted geomorphic surface. Along this transect, late Quaternary slip rates of major faults appear to accommodate 25% of the total horizontal stretching rate between the southern margin of Tendaho graben and the Red Sea coast, as determined from published GPS velocities. This constrains the proportion of total extension between Nubia and Arabia that is accommodated through major faulting in the central Afar, compared to the magmatism and associated faulting of the magmatic propagators elsewhere in the triple junction. Along the transect, individual fault slip rates decrease from the southeast to the northwest, suggesting a `Crank-Arm' model may be more applicable to explain the regional kinematics and the evolution of the triple junction.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Crustal shear-wave splitting from local earthquakes in the Hengill triple junction, southwest Iceland

USGS Publications Warehouse

Evans, J.R.; Foulger, G.R.; Julian, B.R.; Miller, A.D.

1996-01-01

The Hengill region in SW Iceland is an unstable ridge-ridge-transform triple junction between an active and a waning segment of the mid-Atlantic spreading center and a transform that is transgressing southward. The triple junction contains active and extinct spreading segments and a widespread geothermal area. We evaluated shear-wave birefringence for locally recorded upper-crustal earthquakes using an array of 30 three-component digital seismographs. Fast-polarization directions, ??, are mostly NE to NNE, subparallel to the spreading axis and probably caused by fissures and microcracks related to spreading. However, there is significant variability in ?? throughout the array. The lag from fast to slow S is not proportional to earthquake depth (ray length), being scattered at all depths. The average wave-speed difference between qS1 and qS2 in the upper 2-5 km of the crust is 2-5%. Our results suggest considerable heterogeneity or strong S scattering.

Strike-slip tectonics during rift linkage

NASA Astrophysics Data System (ADS)

Pagli, C.; Yun, S. H.; Ebinger, C.; Keir, D.; Wang, H.

2017-12-01

The kinematics of triple junction linkage and the initiation of transforms in magmatic rifts remain debated. Strain patterns from the Afar triple junction provide tests of current models of how rifts grow to link in area of incipient oceanic spreading. Here we present a combined analysis of seismicity, InSAR and GPS derived strain rate maps to reveal that the plate boundary deformation in Afar is accommodated primarily by extensional tectonics in the Red Sea and Gulf of Aden rifts, and does not require large rotations about vertical axes (bookshelf faulting). Additionally, models of stress changes and seismicity induced by recent dykes in one sector of the Afar triple junction provide poor fit to the observed strike-slip earthquakes. Instead we explain these patterns as rift-perpendicular shearing at the tips of spreading rifts where extensional strains terminate against less stretched lithosphere. Our results demonstrate that rift-perpendicular strike-slip faulting between rift segments achieves plate boundary linkage during incipient seafloor spreading.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

Association of the 1886 Charleston, South Carolina, earthquake and seismicity near Summervile with a 12º bend in the East Coast fault system and triple-fault junctions

USGS Publications Warehouse

Marple, R.; Miller, R.

2006-01-01

Seismic-reflection data were integrated with other geophysical, geologic, and seismicity data to better determine the location and nature of buried faults in the Charleston, South Carolina, region. Our results indicate that the 1886 Charleston, South Carolina, earthquake and seismicity near Summerville are related to local stresses caused by a 12?? bend in the East Coast fault system (ECFS) and two triple-fault junctions. One triple junction is formed by the intersection of the northwest-trending Ashley River fault with the two segments of the ECFS north and south of the bend. The other triple junction is formed by the intersection of the northeast-trending Summerville fault and a newly discovered northwest-trending Berkeley fault with the ECFS about 10 km north of the bend. The Summerville fault is a northwest-dipping border fault of the Triassic-age Jedburg basin that is undergoing reverse-style reactivation. This reverse-style reactivation is unusual because the Summerville fault parallels the regional stress field axis, suggesting that the reactivation is from stresses applied by dextral motion on the ECFS. The southwest-dip and reverse-type motion of the Berkeley fault are interpreted from seismicity data and a seismic-reflection profile in the western part of the study area. Our results also indicate that the East Coast fault system is a Paleozoic basement fault and that its reactivation since early Mesozoic time has fractured through the overlying allochthonous terranes.

Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

2017-12-01

The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (<200 °C) processing and fewer process steps to fabricate the device. In this work, we used indium tin oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

Counter-Rotating Magellan and Trinidad Microplates at the Mesozoic Pacific-Phoenix-Farallon Triple Junction

NASA Astrophysics Data System (ADS)

Schouten, H.; Smith, D. K.

2005-12-01

Magellan and Trinidad microplates developed at the Mesozoic triple junction between the Pacific, Phoenix and Farallon plates; the microplates were instrumental in the transition from a transform-ridge-transform to a ridge-ridge-ridge triple junction, which took several tens of millions of years. Contrasting qualitative models for the evolution of these microplates [e.g., Tamaki and Larson, 1988; Nakanishi et al., 1992] provide meager insight in the mechanics of microplate evolution and triple junction transformation. We propose a quantitative model for the evolution of Magellan and Trinidad microplates based on the edge-driven microplate kinematic principles [Schouten et al., 1993] that have provided successful quantitative solutions for the motions of Easter, Juan Fernandez, and Galapagos microplates. In these edge-driven solutions, two angular velocity vectors (describing motion between microplate and driving plates) are located on the microplate boundaries at the tip of rifts that propagate between microplate and driving plates. The rift propagation leaves pseudofaults on microplate and driving plates; the pseudofaults, which can be recognized in the seafloor topography, then become proxies for the trajectories of the angular velocity vectors from which a quantitative solution of microplate motion is derived. Using the estimated seafloor topography of the region and published marine magnetic anomaly lineations we propose the following scenario. The Magellan microplate rotated counterclockwise as evidenced by the fanning of magnetic lineations about the Magellan Trough and the rotation of the older Mid-Pac Mountains lineation set. The Trinidad microplate rotated clockwise relative to the Pacific plate to judge from the wedge-shaped region about the Trinidad trough that has its narrow tip on the Victoria fracture zone (recognized in the estimated seafloor topograpy). The clockwise motion of the Trinidad microplate was driven by Pacific-Phoenix motion; the counterclockwise motion of the Magellan microplate by Pacific-Farallon motion. Thus the Magellan trough opened between the counter-rotating Trinidad and Magellan microplates, similar to the opening of Hess Deep between two counter-rotating Galapagos microplates at the present Galapagos triple junction [Klein et al., 2005]. When the northeastward propagating rift between the Trindad microplate and the Phoenix plate and the southward propagating rift between the Magellan microplate and the Farallon plate broke through to the Phoenix-Farallon spreading center, a new ridge-ridge-ridge triple junction was established between the Pacific, Phoenix and Farallon plates and the Trinidad and Magellan microplates ceased rotating and were abandoned on the Pacific plate.

Theory of amorphous ices.

PubMed

Limmer, David T; Chandler, David

2014-07-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

PubMed Central

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-01-01

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. PMID:28772586

Modeling selenate adsorption behavior on oxides, clay minerals, and soils using the triple layer model

USDA-ARS?s Scientific Manuscript database

Selenate adsorption behavior was investigated on amorphous aluminum oxide, amorphous iron oxide, goethite, clay minerals: kaolinites, montmorillonites, illite, and 18 soil samples from Hawaii, and the Southwestern and the Midwestern regions of the US as a function of solution pH. Selenate adsorpti...

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliviero, E.; David, M. L.; Beaufort, M. F.

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes placemore » and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.« less

Critical Research for Cost-Effective Photoelectrochemical Production of Hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei; Deng, Xunming; Abken, Anka

2014-10-29

The objective of this project is to develop critical technologies required for cost-effective production of hydrogen from sunlight and water using a-Si triple junction solar cell based photo-electrodes. In this project, Midwest Optoelectronics, LLC (MWOE) and its collaborating organizations utilize triple junction a-Si thin film solar cells as the core element to fabricate photoelectrochemical (PEC) cells. Triple junction a-Si/a-SiGe/a-SiGe solar cell is an ideal material for making cost-effective PEC system which uses sun light to split water and generate hydrogen. It has the following key features: 1) It has an open circuit voltage (Voc ) of ~ 2.3V and hasmore » an operating voltage around 1.6V. This is ideal for water splitting. There is no need to add a bias voltage or to inter-connect more than one solar cell. 2) It is made by depositing a-Si/a-SiGe/aSi-Ge thin films on a conducting stainless steel substrate which can serve as an electrode. When we immerse the triple junction solar cells in an electrolyte and illuminate it under sunlight, the voltage is large enough to split the water, generating oxygen at the Si solar cell side (for SS/n-i-p/sunlight structure) and hydrogen at the back, which is stainless steel side. There is no need to use a counter electrode or to make any wire connection. 3) It is being produced in large rolls of 3ft wide and up to 5000 ft long stainless steel web in a 25MW roll-to-roll production machine. Therefore it can be produced at a very low cost. After several years of research with many different kinds of material, we have developed promising transparent, conducting and corrosion resistant (TCCR) coating material; we carried out extensive research on oxygen and hydrogen generation catalysts, developed methods to make PEC electrode from production-grade a-Si solar cells; we have designed and tested various PEC module cases and carried out extensive outdoor testing; we were able to obtain a solar to hydrogen conversion efficiency (STH) about 5.7% and a running time about 480 hrs, which are very promising results; we have also completed a techno-economic analysis of our PEC system, which indicates that a projected hydrogen generation cost of $2/gge is achievable with a 50 Ton-per-day (TPD) scale under certain conditions.« less

Hydrothermal Exploration at the Chile Triple Junction - ABE's last adventure?

NASA Astrophysics Data System (ADS)

German, C. R.; Shank, T. M.; Lilley, M. D.; Lupton, J. E.; Blackman, D. K.; Brown, K. M.; Baumberger, T.; Früh-Green, G.; Greene, R.; Saito, M. A.; Sylva, S.; Nakamura, K.; Stanway, J.; Yoerger, D. R.; Levin, L. A.; Thurber, A. R.; Sellanes, J.; Mella, M.; Muñoz, J.; Diaz-Naveas, J. L.; Inspire Science Team

2010-12-01

In February and March 2010 we conducted preliminary exploration for hydrothermal plume signals along the East Chile Rise where it intersects the continental margin at the Chile Triple Junction (CTJ). This work was conducted as one component of our larger NOAA-OE funded INSPIRE project (Investigation of South Pacific Reducing Environments) aboard RV Melville cruise MV 1003 (PI: Andrew Thurber, Scripps) with all shiptime funded through an award of the State of California to Andrew Thurber and his co-PI's. Additional support came from the Census of Marine Life (ChEss and CoMarge projects). At sea, we conducted a series of CTD-rosette and ABE autonomous underwater vehicle operations to prospect for and determine the nature of any seafloor venting at, or adjacent to, the point where the the East Chile Rise subducts beneath the continental margin. Evidence from in situ sensing (optical backscatter, Eh) and water column analyses of dissolved CH4, δ3He and TDFe/TDMn concentrations document the presence of two discrete sites of venting, one right at the triple junction and the other a further 10km along axis, north of the Triple Junction, but still within the southernmost segment of the East Chile Rise. From an intercomparison of the abundance of different chemical signals we can intercompare likely characteristics of these differet source sites and also differentiate between them and the high methane concentrations released from cold seep sites further north along the Chile Margin, both with the CTJ region and also at the Concepcion Methane Seep Area (CMSA). This multi-disciplinary and international collaboration - involving scientists from Chile, the USA, Europe and Japan - can serve as an excellent and exciting launchpoint for wide-ranging future investigations of the Chile Triple Junction area - the only place on Earth where an oceanic spreading center is being actively subducted beneath a continent and also the only place on Earth where all known forms of deep-sea chemically-reducing ecosystem (hydrothermal vents, cold seeps, oxygen minimum zones and large organic falls) have the potential to co-exist.

Evolution of the Gorda Escarpment, San Andreas fault and Mendocino triple junction from multichannel seismic data collected across the northern Vizcaino block, offshore northern California

USGS Publications Warehouse

Godfrey, N.J.; Meltzer, A.S.; Klemperer, S.L.; Trehu, A.M.; Leitner, B.; Clarke, S.H.; Ondrus, A.

1998-01-01

The Gorda Escarpment is a north facing scarp immediately south of the Mendocino transform fault (the Gorda/Juan de Fuca-Pacific plate boundary) between 126??W and the Mendocino triple junction. It elevates the seafloor at the northern edge of the Vizcaino block, part of the Pacific plate, ??? 1.5 km above the seafloor of the Gorda/Juan de Fuca plate to the north. Stratigraphy interpreted from multichannel seismic data across and close to the Gorda Escarpment suggests that the escarpment is a relatively recent pop-up feature caused by north-south compression across the plate boundary. Close to 126??W. the Vizcaino block acoustic basement shallows and is overlain by sediments that thin north toward the Gorda Escarpment. These sediments are tilted south and truncated at the seafloor. By contrast, in a localized region at the eastern end of the Gorda Escarpment, close to the Mendocino triple junction, the top of acoustic basement dips north and is overlain by a 2-km-thick wedge of pre-11 Ma sedimentary rocks that thickens north, toward the Gorda Escarpment. This wedge of sediments is restricted to the northeast corner of the Vizcaino block. Unless the wedge of sediments was a preexisting feature on the Vizcaino block before it was transferred from the North American to the Pacific plate, the strong spatial correlation between the sedimentary wedge and the triple junction suggests the entire Vizcaino block, with the San Andreas at its eastern boundary, has been part of the Pacific plate since significantly before 11 Ma.

Theory of amorphous ices

PubMed Central

Limmer, David T.; Chandler, David

2014-01-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens. PMID:24858957

Plasmonic-enhanced organic photovoltaics: breaking the 10% efficiency barrier.

PubMed

Gan, Qiaoqiang; Bartoli, Filbert J; Kafafi, Zakya H

2013-05-07

Recent advances in molecular organic photovoltaics (OPVs) have shown 10% power conversion efficiency (PCE) for single-junction cells, which put them in direct competition with PVs based on amorphous silicon. Incorporation of plasmonic nanostructures for light trapping in these thin-film devices offers an attractive solution to realize higher-efficiency OPVs with PCE>10%. This article reviews recent progress on plasmonic-enhanced OPV devices using metallic nanoparticles, and one-dimensional (1D) and two-dimensional (2D) patterned periodic nanostructures. We discuss the benefits of using various plasmonic nanostructures for broad-band, polarization-insensitive and angle-independent absorption enhancement, and their integration with one or two electrode(s) of an OPV device. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Creep deformation and mechanisms in Haynes 230 at 800 °C and 900 °C

NASA Astrophysics Data System (ADS)

Pataky, Garrett J.; Sehitoglu, Huseyin; Maier, Hans J.

2013-11-01

Creep was studied in Haynes 230, a material candidate for the very high temperature reactor's intermediate heat exchanger, at 800 °C and 900 °C. This study focused on the differences between the behavior at the two elevated temperature, and using the microstructure, grain boundary serrations and triple junction strain concentrations were quantitatively identified. There was significant damage in the 900 °C samples and the creep was almost entirely tertiary. In contrast, the 800 °C sample exhibited secondary creep. Using an Arrhenius equation, the minimum creep rate exponents were found to be n ≈ 3 and n ≈ 5 for 900 °C and 800 °C, respectively. The creep mechanisms were identified as solute drag for n ≈ 3 and dislocation climb for n ≈ 5. Strain concentrations were identified at triple junctions and grain boundary serrations using high resolution digital image correlation overlaid on the microstructure. The grain boundary serrations restrict grain boundary sliding which may reduce the creep damage at triple junctions and extend the creep life of Haynes 230 at elevated temperatures.

Recent progress of Spectrolab high-efficiency space solar cells

NASA Astrophysics Data System (ADS)

Law, Daniel C.; Boisvert, J. C.; Rehder, E. M.; Chiu, P. T.; Mesropian, S.; Woo, R. L.; Liu, X. Q.; Hong, W. D.; Fetzer, C. M.; Singer, S. B.; Bhusari, D. M.; Edmondson, K. M.; Zakaria, A.; Jun, B.; Krut, D. D.; King, R. R.; Sharma, S. K.; Karam, N. H.

2013-09-01

Recent progress in III-V multijunction space solar cell has led to Spectrolab's GaInP/GaAs/Ge triple-junction, XTJ, cells with average 1-sun efficiency of 29% (AM0, 28°C) for cell size ranging from 59 to 72-cm2. High-efficiency inverted metamorphic (IMM) multijunction cells are developed as the next space solar cell architecture. Spectrolab's large-area IMM3J and IMM4J cells have achieved 33% and 34% 1-sun, AM0 efficiencies, respectively. The IMM3J and the IMM4J cells have both demonstrated normalized power retention of 0.86 at 5x1014 e-/cm2 fluence and 0.83 and 0.82 at 1x1015 e-/cm2 fluence post 1-MeV electron radiation, respectively. The IMM cells were further assembled into coverglass-interconnect-cell (CIC) strings and affixed to typical rigid aluminum honeycomb panels for thermal cycling characterization. Preliminary temperature cycling data of two coupons populated with IMM cell strings showed no performance degradation. Spectrolab has also developed semiconductor bonded technology (SBT) where highperformance component subcells were grown on GaAs and InP substrates separately then bonded directly to form the final multijunction cells. Large-area SBT 5-junction cells have achieved a 35.1% efficiency under 1-sun, AM0 condition.

Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin;

Power System Mass Analysis for Hydrogen Reduction Oxygen Production on the Lunar Surface

NASA Technical Reports Server (NTRS)

Colozza, Anthony J.

2009-01-01

The production of oxygen from the lunar regolith requires both thermal and electrical power in roughly similar proportions. This unique power requirement is unlike most applications on the lunar surface. To efficiently meet these requirements, both solar PV array and solar concentrator systems were evaluated. The mass of various types of photovoltaic and concentrator based systems were calculated to determine the type of power system that provided the highest specific power. These were compared over a range of oxygen production rates. Also a hybrid type power system was also considered. This system utilized a photovoltaic array to produce the electrical power and a concentrator to provide the thermal power. For a single source system the three systems with the highest specific power were a flexible concentrator/Stirling engine system, a rigid concentrator/Stirling engine system and a tracking triple junction solar array system. These systems had specific power values of 43, 34, and 33 W/kg, respectively. The hybrid power system provided much higher specific power values then the single source systems. The best hybrid combinations were the triple junction solar array with the flexible concentrator and the rigid concentrator. These systems had a specific power of 81 and 68 W/kg, respectively.

3-D laser confocal microscopy study of the oxidation of NdFeB magnets in atmospheric conditions

NASA Astrophysics Data System (ADS)

Meakin, J. P.; Speight, J. D.; Sheridan, R. S.; Bradshaw, A.; Harris, I. R.; Williams, A. J.; Walton, A.

2016-08-01

Neodymium iron boron (NdFeB) magnets are used in a number of important applications, such as generators in gearless wind turbines, motors in electric vehicles and electronic goods (e.g.- computer hard disk drives, HDD). Hydrogen can be used as a processing gas to separate and recycle scrap sintered Nd-Fe-B magnets from end-of-life products to form a powder suitable for recycling. However, the magnets are likely to have been exposed to atmospheric conditions prior to processing, and any oxidation could lead to activation problems for the hydrogen decrepitation reaction. Many previous studies on the oxidation of NdFeB magnets have been performed at elevated temperatures; however, few studies have been formed under atmospheric conditions. In this paper a combination of 3-D laser confocal microscopy and Raman spectroscopy have been used to assess the composition, morphology and rate of oxidation/corrosion on scrap sintered NdFeB magnets. Confocal microscopy has been employed to measure the growth of surface reaction products at room temperature, immediately after exposure to air. The results showed that there was a significant height increase at the triple junctions of the Nd-rich grain boundaries. Using Raman spectroscopy, the product was shown to consist of Nd2O3 and formed only on the Nd-rich triple junctions. The diffusion coefficient of the triple junction reaction product growth at 20 °C was determined to be approximately 4 × 10-13 cm2/sec. This value is several orders of magnitude larger than values derived from the diffusion controlled oxide growth observations at elevated temperatures in the literature. This indicates that the growth of the room temperature oxidation products are likely defect enhanced processes at the NdFeB triple junctions.

Southeast Pacific tectonic evolution from Early Oligocene to Present

NASA Astrophysics Data System (ADS)

Tebbens, S. F.; Cande, S. C.

1997-06-01

Plate tectonic reconstructions of the Nazca, Antarctic, and Pacific plates are presented from late Oligocene to Present. These reconstructions document major plate boundary reorganizations in the southeast Pacific at dirons 6C (24 Ma), 6(o) (20 Ma), and 5A (12 Ma) and a smaller reorganization at chron 3(o) (5 Ma). During the chron 6(o) reorganization it appears that a ridge propagated into crust north of the northernmost Pacific-Antarctic Ridge, between the Chiloe fracture zone (FZ) of the Chile ridge and Agassiz FZ of the Pacific-Nazca ridge, which resulted in a northward jump of the Pacific-Antarctic-Nazca (PAC-ANT-NAZ) mid-ocean triple junction. During the chron 5A reorganization the Chile ridge propagated northward from the Valdivia FZ system to the Challenger FZ, through lithosphere formed roughly 5 Myr earlier at the Pacific-Nazca ridge. During this reorganization a short-lived microplate (the Friday microplate) existed at the PAC-ANT-NAZ triple junction. The PAC-ANT-NAZ triple junction jumped northward 500 km as a result of this reorganization, from a location along the Valdivia FZ to a location along the Challenger FZ. The chron 5A reorganization also included a change in spreading direction of the Chile and Pacific-Antarctic ridges. The reorganization at chron 3(o) initiated the formation of the Juan Fernandez and Easter microplates along the East Pacific rise. The manner of plate boundary reorganization at chron 6(o) and chron 5A (and possibly today at the Juan Fernandez microplate) included a sequence of rift propagation, transfer of lithosphere from one plate to another, microplate formation, and microplate abandonment and resulted in northward migration of the PAC-ANT-NAZ triple junction. The associated microplate differs from previously studied microplates in that there is no failed ridge.

Tectonic fabric of northern North Fiji and Lau basins from GLORIA sidescan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiffin, D.L.; Clarke, J.E.H.; Johnson, D.

1990-06-01

GLORIA mosaics, Seabeam, and seismic data over parts of the backarc New Hebrides arc, northwest and central North Fiji basin, Fiji Fracture Zone north of Fiji, Peggy Ridge, northeast Lau basin, northern Tonga arc, northwestern Tonga Trench, and Western Samoa reveal a complex tectonic framework for the region. Two triple junctions and several rifts are clearly delineated by outcrops and ridges of neovolcanic rocks. Backarc troughs in the New Hebrides Arc are commonly floored by volcanic rocks with little sediment cover. The locus of major faults are well defined in places by volcanic ridges and scarps. On the Fiji Fracturemore » Zone north of Fiji, scarps indicate the trace, but west of Fiji it disappears for about 100 km, becoming well pronounced again near the central North Fiji basin triple junction. At Peggy Ridge a very extensive area of sheet-like volcanics indicates activity extends northeast from Peggy Ridge toward the western extension of the Tonga Trench passing west of Niuafo'ou Island, possibly marking a fault-to-trench transition. East of Niuafo'ou Island, backarc spreading close to the Tofua Arc is seen at a nascent triple junction, its northern arm approaching close to the western Tonga Trench. Long linear fault scarps in the trench result from bending of the crust. Only a few areas, including the seafloor north of Samoa, are mainly sediment covered. Two known hydrothermal deposits near the two triple junctions have been imaged, but other mapped areas of extensive neo-volcanics in the vicinity of propagators and pull-apart basins suggest sites for further investigation. The prevalence of ridge propagators and extensional basins suggests their significant role in the development of the region.« less

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.

PubMed

Hernández-Saz, J; Herrera, M; Delgado, F J; Duguay, S; Philippe, T; Gonzalez, M; Abell, J; Walters, R J; Molina, S I

2016-07-29

The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.

High quality lamella preparation of gallium nitride compound semiconductor using Triple Beam™ system

NASA Astrophysics Data System (ADS)

Sato, T.; Nakano, K.; Matsumoto, H.; Torikawa, S.; Nakatani, I.; Kiyohara, M.; Isshiki, T.

2017-09-01

Gallium nitride (GaN) compound semiconductors have been known to be very sensitive to Ga focused ion beam (FIB) processing. Due to the nature of GaN based materials it is often difficult to produce damage-free lamellae, therefore applying the Triple Beam™ system which incorporates an enhanced method for amorphous removal is presented to make a high quality lamella. The damage or distortion layer thickness of GaN single crystal prepared with 30 kV Ga FIB and 1 kV Ga FIB were about 17 nm and 1.5 nm respectively. The crystallinity at the uppermost surface remained unaffected when the condition of 1 kV Ar ion milling with the Triple Beam™ system was used. The technique of combining traditional Ga FIB processing with an enhanced method for amorphous layer removal by low energy Ar ion milling allows us to analyse the InGaN/GaN interface using aberration corrected scanning transmission electron microscopy at atomic resolution levels.

Upper plate contraction north of the migrating Mendocino triple junction northern California: Implications for partitioning of strain

USGS Publications Warehouse

McCrory, P.A.

2000-01-01

Geologic measurement of permanent contraction across the Cascadia subduction margin constrains one component of the tectonic deformation along the convergent plate boundary, the component critical for the seismic hazard assessment of crustal faults. A comprehensive survey of active faults in onshore subduction margin rocks at the southern end of the Cascadia subduction zone indicates that these thrust faults accommodate ??10 mm/yr of convergence oriented 020??-045??. Seismotectonic models of subduction zones typically assign this upper plate strain to the estimate of aseismic slip on the megathrust. Geodetic models include this permanent crustal strain within estimates of elastic strain accumulation on the megathrust. Both types of models underestimate the seismic hazard associated with crustal faults. Subtracting the observed contraction from the plate convergence rate (40-50 mm/yr; directed 040??-055??) leaves 30-40 mm/yr of convergence to be partitioned between slip on the megathrust, contraction within the southern Juan de Fuca plate, and crustal contraction outside the subduction complex rocks. This simple estimate of slip partitioning neglects the discrepancy between the plate convergence and contraction directions in the vicinity of the Mendocino triple junction. The San Andreas and Cascadia limbs of the Mendocino triple junction are not collinear. The eastern edge of the broad San Andreas boundary is ??85 km east of the Cascadia subduction boundary, and across this zone the Pacific plate converges directly with the North America plate. The skewed orientation of crustal structures just north of the leading edge of the Pacific plate suggests that they are deforming in a hybrid stress field resulting from both Juan de Fuca-North America motion and Pacific-North America motion. The composite convergence direction (50 mm/yr: directed 023??) is consistent with the compressive stress axis (020??) inferred from focal mechanisms of crustal earthquakes in the Humboldt region. Deformation in such a hybrid stress field implies that the crustal faults are being loaded from two major tectonic sources. The slip on crustal faults north of the Mendocino triple junction may consume 4-5 mm/yr of Pacific-Humboldt convergence. The remaining 17-18 mm/yr of convergence may be consumed as distributed shortening expressed in the high rates of uplift in the Cape Mendocino region or as northward translation of the continental margin, north of the triple junction.

Equipment Loan for Concentrated PV Cavity Converter (PVCC) Research: Cooperative Research and Development Final Report, CRADA Number CRD-08-285

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netter, Judy

2015-07-28

Interest in High Concentration Photovoltaics (HCPV) for terrestrial applications has significantly grown in recent years. A major driver behind this growth trend is the availability of high efficiency multi-junction (MJ) cells that promise reliable operation under high concentrations (500 to 1000 suns). The primary impact of HCPV on the solar electricity cost is the dramatic reduction in cell cost. For terrestrial HCPV systems, operating at concentrations ≥ 500 suns, the expensive MJ cells are marginally affordable. Most recently, triple-junction test cells have achieved a conversion efficiency of over 40% under concentrated sunlight. Photovoltaic Cavity Converter (PVCC) is a multi-bandgap, highmore » concentration PV device developed by United Innovations, Inc., under subcontract to NREL. The lateral- (2- dimensional) structure of PVCC, as opposed to vertical multi-junction (MJ) structure, helps to circumvent most of the developmental challenges MJ technology has yet to overcome. This CRADA will allow the continued development of this technology by United Innovations. This project was funded by the California Energy Commission and is the second phase of a twopart demonstration program. The key advantage of the design was the use of a PVCC as the receiver. PVCCs efficiently process highly concentrated solar radiation into electricity by recycling photons that are reflected from the surface of the cells. Conventional flat, twodimensional receivers cannot recycle photons and the reflected photons are lost to the conversion process.« less

Forward Technology Solar Cell Experiment First On-Orbit Data

NASA Technical Reports Server (NTRS)

Walters, R. J.; Garner, J. C.; Lam, S. N.; Vazquez, J. A.; Braun, W. R.; Ruth, R. E.; Warner, J. H.; Lorentzen, J. R.; Messenger, S. R.; Bruninga, R.;

Analysis of Thermal Losses for a Variety of Single-Junction Photovoltaic Cells: An Interesting Means of Thermoelectric Heat Recovery

NASA Astrophysics Data System (ADS)

Lorenzi, Bruno; Acciarri, Maurizio; Narducci, Dario

2015-06-01

Exploitation of solar energy conversion has become a fundamental aspect of satisfying a growing demand for energy. Thus, improvement of the efficiency of conversion in photovoltaic (PV) devices is highly desirable to further promote this source. Because it is well known that the most relevant efficiency constraint, especially for single-junction solar cells, is unused heat within the device, hybrid thermo-photovoltaic systems seem promising . Among several hybrid solutions proposed in the literature, coupling of thermoelectric and PV devices seems one of the most interesting. Taking full advantage of this technology requires proper definition and analysis of the thermal losses occurring in PV cells. In this communication we propose a novel analysis of such losses, decoupling source-dependent and absorber-dependent losses. This analysis enables an evaluation of the actual recoverable amount of energy, depending on the absorber used in the PV cell. It shows that for incoming solar irradiation of , and depending on the choice of material, the maximum available thermal power ranges from (for single-crystal silicon) to (for amorphous silicon).

Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; van Hest, M. F. A. M.; Contreras, M.

Cu(In,Ga)Se2 (CIGS) solar cells in superstrate configuration promise improved light management and higher stability compared to substrate devices, but they have yet to deliver comparable power conversion efficiencies (PCEs). Chemical reactions between the CIGS layer and the front contact were shown in the past to deteriorate the p-n junction in superstrate devices, which led to lower efficiencies compared to the substrate-type devices. This work aims to solve this problem by identifying a buffer layer between the CIGS layer and the front contact, acting as the electron transport layer, with an optimized electron affinity, doping density and chemical stability. Using combinatorialmore » material exploration we identified amorphous gallium oxide (a-GaOx) as a potentially suitable buffer layer material. The best results were obtained for a-GaOx with an electron affinity that was found to be comparable to that of CIGS. Based on the results of device simulations, it is assumed that detrimental interfacial acceptor states are present at the interface between CIGS and a-GaOx. However, these initial experiments indicate the potential of a-GaOx in this application, and how to reach performance parity with substrate devices, by further increase of its n-type doping density.« less

Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

PubMed Central

Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

2016-01-01

Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016) [1]. PMID:26977439

Lightweight IMM PV Flexible Blanket Assembly

NASA Technical Reports Server (NTRS)

Spence, Brian

2015-01-01

Deployable Space Systems (DSS) has developed an inverted metamorphic multijunction (IMM) photovoltaic (PV) integrated modular blanket assembly (IMBA) that can be rolled or z-folded. This IMM PV IMBA technology enables a revolutionary flexible PV blanket assembly that provides high specific power, exceptional stowed packaging efficiency, and high-voltage operation capability. DSS's technology also accommodates standard third-generation triple junction (ZTJ) PV device technologies to provide significantly improved performance over the current state of the art. This SBIR project demonstrated prototype, flight-like IMM PV IMBA panel assemblies specifically developed, designed, and optimized for NASA's high-voltage solar array missions.

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

NASA Technical Reports Server (NTRS)

Hanak, J. J.; Flaisher, H.

1991-01-01

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

DOE Office of Scientific and Technical Information (OSTI.GOV)

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Simore » materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.« less

Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lillo, Thomas; Rooyen, Isabella Van

2015-05-01

Knowledge of the associations and composition of fission products in the neutron irradiated SiC layer of high-temperature gas reactor TRISO fuel is important to the understanding of various aspects of fuel performance that presently are not well understood. Recently, advanced characterization techniques have been used to examine fuel particles from the Idaho National Laboratory’s AGR-1 experiment. Nano-sized Ag and Pd precipitates were previously identified in grain boundaries and triple points in the SiC layer of irradiated TRISO nuclear fuel. Continuation of this initial research is reported in this paper and consists of the characterization of a relatively large number ofmore » nano-sized precipitates in three areas of the SiC layer of a single irradiated TRISO nuclear fuel particle using standardless EDS analysis on focused ion beam-prepared transmission electron microscopy samples. Composition and distribution analyses of these precipitates, which were located on grain boundaries, triple junctions and intragranular precipitates, revealed low levels, generally <10 atomic %, of palladium, silver and/or uranium with palladium being the most common element found. Palladium by itself, or associated with either silver or uranium, was found throughout the SiC layer. A small number of precipitates on grain boundaries and triple junctions were found to contain only silver or silver in association with palladium while uranium was always associated with palladium but never found by itself or in association with silver. Intergranular precipitates containing uranium were found to have migrated ~23 μm along a radial direction through the 35 μm thick SiC coating during the AGR-1 experiment while silver-containing intergranular precipitates were found at depths up to ~24 μm in the SiC layer. Also, Pd-rich, nano-precipitates (~10 nm in diameter), without evidence for the presence of either Ag or U, were revealed in intragranular regions throughout the SiC layer. Because not all grain boundaries and triple junctions contained precipitates with fission products and/or uranium, along with the differences in migration behavior between Pd, Ag and U, it was concluded that crystallographic grain boundary and triple junction parameters likely influence migration behavior.« less

Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

NASA Technical Reports Server (NTRS)

Naseem, H. A.; Brown, W. D.; Ang, S. S.

1993-01-01

Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.

Unfolding of a branched double-helical DNA three-way junction with triple-helical ends.

PubMed

Hüsler, P L; Klump, H H

1994-08-15

We have designed three oligonucleotides (33 mers) which when mixed in a 1:1:1 ratio form double-helical DNA three-way junctions with triple helical ends in the pH interval pH 4 to 5.5. The triplex to coil transition is initiated by raising the temperature and was recorded by temperature gradient gel electrophoresis, uv melting, and differential scanning calorimetry. The transitions can be deconvoluted into three subtransitions representing the independent thermal denaturation of each of the arms. We have proposed a model for the unfolding pathway and give the thermodynamic parameters for each step as calculated using the formalism outlined in the appendix.

Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

NASA Astrophysics Data System (ADS)

Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

2018-06-01

In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiOxNy tunnel barrier

NASA Astrophysics Data System (ADS)

Nakane, Ryosho; Hada, Takato; Sato, Shoichi; Tanaka, Masaaki

2018-04-01

We studied the spin accumulation signals in phosphorus-doped n+-Si (8 × 1019 cm-3) by measuring the spin transport in three-terminal vertical devices with Fe(3 nm)/Mg(0 and 1 nm)/SiOxNy(1 nm)/n+-Si(001) tunnel junctions, where the amorphous SiOxNy layer was formed by oxnitridation of the Si substrate with radio frequency plasma. Obvious spin accumulation signals were observed at 4-300 K in the spin extraction geometry when the thickness of the Mg insertion layer was 1 nm. We found that by inserting a thin (1 nm) Mg layer, intermixing of Fe and SiOxNy is suppressed, leading to the appearance of the spin accumulation signals, and this result is consistent with the dead layer model recently proposed by our group [S. Sato et al., Appl. Phys. Lett. 107, 032407 (2015)]. We obtained relatively high spin polarization (PS) of electrons tunneling through the junction and long spin lifetime (τS): PS = 16% and τS = 5.6 ns at 4 K and PS = 7.5% and τS = 2.7 ns at 300 K. Tunnel junctions with an amorphous SiOxNy tunnel barrier are very promising for Si-based spintronic devices, since they can be formed by the method compatible with the silicon complementary metal-oxide-semiconductor technology.

Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS2/Si Junctions.

PubMed

Hu, Chang; Wang, Xianjie; Miao, Peng; Zhang, Lingli; Song, Bingqian; Liu, Weilong; Lv, Zhe; Zhang, Yu; Sui, Yu; Tang, Jinke; Yang, Yanqiang; Song, Bo; Xu, Ping

2017-05-31

The lateral photovoltaic (LPV) effect has attracted much attention for a long time because of its application in position-sensitive detectors (PSD). Here, we report the ultrafast response of the LPV in amorphous MoS 2 /Si (a-MoS 2 /Si) junctions prepared by the pulsed laser deposition (PLD) technique. Different orientations of the built-in field and the breakover voltages are observed for a-MoS 2 films deposited on p- and n-type Si wafers, resulting in the induction of positive and negative voltages in the a-MoS 2 /n-Si and a-MoS 2 /p-Si junctions upon laser illumination, respectively. The dependence of the LPV on the position of the illumination shows very high sensitivity (183 mV mm -1 ) and good linearity. The optical relaxation time of LPV with a positive voltage was about 5.8 μs in a-MoS 2 /n-Si junction, whereas the optical relaxation time of LPV with a negative voltage was about 2.1 μs in a-MoS 2 /p-Si junction. Our results clearly suggested that the inversion layer at the a-MoS 2 /Si interface made a good contribution to the ultrafast response of the LPV in a-MoS 2 /Si junctions. The large positional sensitivity and ultrafast relaxation of LPV may promise the a-MoS 2 /Si junction's applications in fast position-sensitive detectors.

ON the interaction of the north andes plate with the caribbean and south american plates in northwestern south america from gps geodesy and seismic data

NASA Astrophysics Data System (ADS)

Pérez, Omar J.; Wesnousky, Steven G.; De La Rosa, Roberto; Márquez, Julio; Uzcátegui, Redescal; Quintero, Christian; Liberal, Luis; Mora-Páez, Héctor; Szeliga, Walter

2018-06-01

We examine the hypocentral distribution of seismicity and a series of geodetic velocity vectors obtained from Global Positioning System (GPS) observations between 1994 and 2015 both off-shore and mainland northwestern South America [66° W - 77° W; 8° N - 14° N]. Our analysis, that includes a kinematic block modeling, shows that east of the Caribbean-South American-North Andes plates triple junction at ˜68° W; 10.7° N, right-lateral easterly oriented shear motion (˜19.6 ± 2.0 mm/yr) between the Caribbean and South-America plates is split along two easterly striking, right-lateral strike slip subparallel fault zones: the San Sebastián fault that runs offshore the Venezuelan coast and slips about 17.0 ± 0.5 mm/yr, and the La Victoria fault, located onshore to the south, which is accumulating strain equivalent to 2.6 ± 0.4 mm/yr. West of the triple junction, relative right-lateral motion between the Caribbean and South American plates is mostly divided between the Morrocoy and Boconó fault systems which strike northwest and southwest from the triple junction, respectively, and bound the intervening North Andes plate that shows an easterly oriented geodetic slip of 15.0 ± 1.0 mm/yr relative to the South American plate. Slip on the Morrocoy fault is right-lateral and transtensional. Motion across the Boconó fault is also right-lateral but instead transpressional, divided between ˜9 to 11 mm/yr of right-slip on the Boconó fault and 2 to 5 mm/yr of convergence across adjacent and subparallel thrust faults. Farther west of the triple junction, ˜800 km away in northern Colombia, the Caribbean plate subducts to the southeast beneath the North Andes plate at a geodetically estimated rate of ˜5-7 mm/yr.

InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

NASA Astrophysics Data System (ADS)

Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

2010-10-01

The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

The Galapagos Microplate Revealed

NASA Astrophysics Data System (ADS)

Smith, D. K.; Schouten, H.; Cann, J. R.; Zhu, W.; Montesi, L. G.; Mitchell, G. A.

2009-12-01

We report a new bathymetry survey of the Galapagos microplate (GMP), which separates the Pacific, Nazca, and Cocos plates at the Galapagos Triple Junction. Prior to the formation of the microplate, 1.5-1.0 Ma, there was a succession of transient minor rifts forming triple junctions north and south of the propagating Cocos-Nazca rift (see Schouten et al. abstract). As proposed by Lonsdale (1988) the formation of a large near-axis seamount coincided with the initiation of the GMP and stabilized rifting on its southern boundary, now called Dietz Deep Rift. Lonsdale also proposed that the GMP was rotating clockwise at 6 degrees/my. Schouten et al. (1993) and Klein et al. (2005) applied an edge-driven microplate model to the GMP to understand its kinematics and predicted rotation rates of 30-40 degrees/my and 22 degrees/my, respectively. These interpretations and predictions were based on sparse bathymetry data. In early 2009 (AT 15-41), we mapped the Galapagos microplate in its entirety to understand more fully the conditions that led to the stabilization of the southern triple junction at Dietz Deep Rift and to constrain the rotation rate of the microplate. Our new data show the two highly contrasted sections of Dietz Deep Rift. The northeastern section contains Dietz Deep, a 2 km deep basin, within a fault-dominated rift valley about 20 km wide; subsidiary rifts occur to the south. Sidescan data indicate that extension in this broadly rifted area has been largely amagmatic. The southwestern section of Dietz Deep Rift is dominated by a variety of volcanic constructions in which faulting plays a minor part. The volcanism has resulted in two large seamounts and a number of volcanic ridges running parallel to the fault dominated rift valley. The largest volcanic ridge is steep-sided and straight, and extends to intersect the East Pacific Rise (EPR) at 1 10’N to form the triple junction. Other minor volcanic ridges occur in the SW section of the microplate fanning towards the EPR from the north side of the large, straight ridge. Most of the core of the microplate shows N-S abyssal hills produced at the EPR, and indicates that the microplate is not rotating and has not rotated for much of its history. A section of seafloor in the northeast part of the microplate, however, has been rotated and indicates that before about 1 Ma the kinematics of the region were different. We present scenarios for the evolution of the southern triple junction to explain the seafloor patterns.

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

NASA Astrophysics Data System (ADS)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30%

PubMed Central

Jia, Jieyang; Seitz, Linsey C.; Benck, Jesse D.; Huo, Yijie; Chen, Yusi; Ng, Jia Wei Desmond; Bilir, Taner; Harris, James S.; Jaramillo, Thomas F.

2016-01-01

Hydrogen production via electrochemical water splitting is a promising approach for storing solar energy. For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies. Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge. Our system consists of two polymer electrolyte membrane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produces a large-enough voltage to drive both electrolysers with no additional energy input. The solar concentration is adjusted such that the maximum power point of the photovoltaic is well matched to the operating capacity of the electrolysers to optimize the system efficiency. The system achieves a 48-h average STH efficiency of 30%. These results demonstrate the potential of photovoltaic-electrolysis systems for cost-effective solar energy storage. PMID:27796309

Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30.

PubMed

Jia, Jieyang; Seitz, Linsey C; Benck, Jesse D; Huo, Yijie; Chen, Yusi; Ng, Jia Wei Desmond; Bilir, Taner; Harris, James S; Jaramillo, Thomas F

2016-10-31

Hydrogen production via electrochemical water splitting is a promising approach for storing solar energy. For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies. Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge. Our system consists of two polymer electrolyte membrane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produces a large-enough voltage to drive both electrolysers with no additional energy input. The solar concentration is adjusted such that the maximum power point of the photovoltaic is well matched to the operating capacity of the electrolysers to optimize the system efficiency. The system achieves a 48-h average STH efficiency of 30%. These results demonstrate the potential of photovoltaic-electrolysis systems for cost-effective solar energy storage.

High-concentration planar microtracking photovoltaic system exceeding 30% efficiency

NASA Astrophysics Data System (ADS)

Price, Jared S.; Grede, Alex J.; Wang, Baomin; Lipski, Michael V.; Fisher, Brent; Lee, Kyu-Tae; He, Junwen; Brulo, Gregory S.; Ma, Xiaokun; Burroughs, Scott; Rahn, Christopher D.; Nuzzo, Ralph G.; Rogers, John A.; Giebink, Noel C.

2017-08-01

Prospects for concentrating photovoltaic (CPV) power are growing as the market increasingly values high power conversion efficiency to leverage now-dominant balance of system and soft costs. This trend is particularly acute for rooftop photovoltaic power, where delivering the high efficiency of traditional CPV in the form factor of a standard rooftop photovoltaic panel could be transformative. Here, we demonstrate a fully automated planar microtracking CPV system <2 cm thick that operates at fixed tilt with a microscale triple-junction solar cell at >660× concentration ratio over a 140∘ full field of view. In outdoor testing over the course of two sunny days, the system operates automatically from sunrise to sunset, outperforming a 17%-efficient commercial silicon solar cell by generating >50% more energy per unit area per day in a direct head-to-head competition. These results support the technical feasibility of planar microtracking CPV to deliver a step change in the efficiency of rooftop solar panels at a commercially relevant concentration ratio.

Realization of compact, passively-cooled, high-flux photovoltaic prototypes

NASA Astrophysics Data System (ADS)

Feuermann, Daniel; Gordon, Jeffrey M.; Horne, Steve; Conley, Gary; Winston, Roland

2005-08-01

The materialization of a recent conceptual advance in high-flux photovoltaic concentrators into first-generation prototypes is reported. Our design strategy includes a tailored imaging dual-mirror (aplanatic) system, with a tapered glass rod that enhances concentration and accommodates larger optical errors. Designs were severely constrained by the need for ultra-compact (minimal aspect ratio) modules, simple passive heat rejection, liberal optical tolerances, incorporating off-the-shelf commercial solar cells, and pragmatic considerations of affordable fabrication technologies. Each unit has a geometric concentration of 625 and irradiates a single square 100 mm2 triple-junction high-efficiency solar cell at a net flux concentration of 500.

230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji

2005-02-01

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Multijunction Solar Cell Development and Production at Spectrolab

NASA Technical Reports Server (NTRS)

Fetzer, Chris; King, R. R.; Law, D. C.; Edmondson, K. M.; Isshiki, T.; Haddad, M.; Zhang, X.; Boisvert, J. C.; Joslin, D. E.; Karam, N. H.

2007-01-01

Development of multijunction space solar cells is much like that for any high technology product. New products face two major pressures from the market: improving performance while maintaining heritage. This duality of purpose is not new and has been represented since ancient times by the Roman god Janus.[1] This deity was typically represented as two faces on a single head: one facing forward and the other to the rear. The image of Janus has been used as symbolism for many combined forces of dual purpose, such as the balance in life between beginnings and endings, or between art and science. For our purposes, Janus represents our design philosophy balance between looking to the future for improvement while simultaneously blending past heritage. In the space photovoltaics industry there are good reasons for both purposes. Looking to the past, a product must have a space flight heritage to gain widespread use. The main reason being that this is an unforgiving business. Spacecraft are expensive to build, launch and operate. Typically once a satellite is launched, in-field service for a power systems problem is near impossible.[2Balanced with this is looking forward. New missions typically require more power than previous programs or attempt new objectives such as a new orbit. And there is always the cost pressure for both the satellite itself as well as the launch costs. Both of which push solar technology to improve power density at a lower cost. The consequence of this balance in a high-risk environment is that space PV develops as a series of infrequent large technology steps or generational changes interspersed with more frequent small technology steps or evolutionary changes. Figure 1 gives a bit of clarification on this point. It depicts the historical progress in space solar cells tracked by efficiency against first launch date for most major products introduced by Spectrolab. The first generation is the Si-based technology reaching a peak values near 15% AM0 (herein denoted for max. power, AM0, 1.353 W/cm2, 28 C). The GaAs single junction device generation supplanted this technology with first flight of GaAs on GaAs substrate in 1982.[3] More recently this generation has been supplanted by the multijunction solar cell GaInP/GaAs/Ge generation. The first launch of a commercial satellite powered by multijunction technology was in 1997 (Hughes HS 601HP) using solar arrays based on Spectrolab s dual junction (DJ) cells. The cells at that time were an impressive 21.5% efficient at beginning-of-life (BOL).[4] Eight years later, the multijunction device has evolved through several versions. The incorporation of an active Ge subcell formed the Triple Junction (TJ) product line at 25.1% efficient, on orbit since November 2001. The evolution of the TJ into the Improved Triple Junction (ITJ) at 26.8% efficient has been on orbit since June of 2002.[5

On the enigmatic birth of the Pacific Plate within the Panthalassa Ocean

PubMed Central

Boschman, Lydian M.; van Hinsbergen, Douwe J. J.

2016-01-01

The oceanic Pacific Plate started forming in Early Jurassic time within the vast Panthalassa Ocean that surrounded the supercontinent Pangea, and contains the oldest lithosphere that can directly constrain the geodynamic history of the circum-Pangean Earth. We show that the geometry of the oldest marine magnetic anomalies of the Pacific Plate attests to a unique plate kinematic event that sparked the plate’s birth at virtually a point location, surrounded by the Izanagi, Farallon, and Phoenix Plates. We reconstruct the unstable triple junction that caused the plate reorganization, which led to the birth of the Pacific Plate, and present a model of the plate tectonic configuration that preconditioned this event. We show that a stable but migrating triple junction involving the gradual cessation of intraoceanic Panthalassa subduction culminated in the formation of an unstable transform-transform-transform triple junction. The consequent plate boundary reorganization resulted in the formation of a stable triangular three-ridge system from which the nascent Pacific Plate expanded. We link the birth of the Pacific Plate to the regional termination of intra-Panthalassa subduction. Remnants thereof have been identified in the deep lower mantle of which the locations may provide paleolongitudinal control on the absolute location of the early Pacific Plate. Our results constitute an essential step in unraveling the plate tectonic evolution of “Thalassa Incognita” that comprises the comprehensive Panthalassa Ocean surrounding Pangea. PMID:29713683

On the Enigmatic Birth of the Pacific Plate within the Panthalassa Ocean

NASA Astrophysics Data System (ADS)

Boschman, L.; Van Hinsbergen, D. J. J.

2016-12-01

The oceanic Pacific Plate started forming in Early Jurassic time within the vast Panthalassa Ocean that surrounded the supercontinent Pangea and contains the oldest lithosphere that can directly constrain the geodynamic history of the circum-Pangean Earth. Here, we show that the geometry of the oldest marine magnetic anomalies of the Pacific Plate attests of a unique plate kinematic event that sparked the plate's birth in virtually a point location, surrounded by the Izanagi, Farallon and Phoenix Plates. We reconstruct the unstable triple junction that caused the plate reorganization leading to the birth of the Pacific Plate and present a model of the plate tectonic configuration that preconditioned this event. We show that a stable, but migrating triple junction involving the gradual cessation of intra-oceanic Panthalassa subduction culminated in the formation of an unstable transform-transform-transform triple junction. The consequent plate boundary reorganization resulted in the formation of a stable triangular three-ridge system from which the nascent Pacific Plate expanded. We link the birth of the Pacific Plate to the regional termination of intra-Panthalassa subduction. Remnants thereof have been identified in the deep lower mantle of which the locations may provide paleolongitudinal control on the absolute location of the early Pacific Plate. Our results constitute an essential step in unraveling the plate tectonic evolution of `Thalassa Incognita' comprising the comprehensive Panthalassa Ocean surrounding Pangea.

On the enigmatic birth of the Pacific Plate within the Panthalassa Ocean.

PubMed

Boschman, Lydian M; van Hinsbergen, Douwe J J

2016-07-01

The oceanic Pacific Plate started forming in Early Jurassic time within the vast Panthalassa Ocean that surrounded the supercontinent Pangea, and contains the oldest lithosphere that can directly constrain the geodynamic history of the circum-Pangean Earth. We show that the geometry of the oldest marine magnetic anomalies of the Pacific Plate attests to a unique plate kinematic event that sparked the plate's birth at virtually a point location, surrounded by the Izanagi, Farallon, and Phoenix Plates. We reconstruct the unstable triple junction that caused the plate reorganization, which led to the birth of the Pacific Plate, and present a model of the plate tectonic configuration that preconditioned this event. We show that a stable but migrating triple junction involving the gradual cessation of intraoceanic Panthalassa subduction culminated in the formation of an unstable transform-transform-transform triple junction. The consequent plate boundary reorganization resulted in the formation of a stable triangular three-ridge system from which the nascent Pacific Plate expanded. We link the birth of the Pacific Plate to the regional termination of intra-Panthalassa subduction. Remnants thereof have been identified in the deep lower mantle of which the locations may provide paleolongitudinal control on the absolute location of the early Pacific Plate. Our results constitute an essential step in unraveling the plate tectonic evolution of "Thalassa Incognita" that comprises the comprehensive Panthalassa Ocean surrounding Pangea.

High Voltage Solar Concentrator Experiment with Implications for Future Space Missions

NASA Technical Reports Server (NTRS)

Mehdi, Ishaque S.; George, Patrick J.; O'Neill, Mark; Matson, Robert; Brockschmidt, Arthur

2004-01-01

This paper describes the design, development, fabrication, and test of a high performance, high voltage solar concentrator array. This assembly is believed to be the first ever terrestrial triple-junction-cell solar array rated at over 1 kW. The concentrator provides over 200 W/square meter power output at a nominal 600 Vdc while operating under terrestrial sunlight. Space-quality materials and fabrication techniques were used for the array, and the 3005 meter elevation installation below the Tropic of Cancer allowed testing as close as possible to space deployment without an actual launch. The array includes two concentrator modules, each with a 3 square meter aperture area. Each concentrator module uses a linear Fresnel lens to focus sunlight onto a photovoltaic receiver that uses 240 series-connected triple-junction solar cells. Operation of the two receivers in series can provide 1200 Vdc which would be adequate for the 'direct drive' of some ion engines or microwave transmitters in space. Lens aperture width is 84 cm and the cell active width is 3.2 cm, corresponding to a geometric concentration ratio of 26X. The evaluation includes the concentrator modules, the solar cells, and the materials and techniques used to attach the solar cells to the receiver heat sink. For terrestrial applications, a finned aluminum extrusion was used for the heat sink for the solar cells, maintaining a low cell temperature so that solar cell efficiency remains high.

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

NASA Technical Reports Server (NTRS)

Mueller, Robert L.; Anspaugh, Bruce E.

1993-01-01

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

EDITORIAL: Enhance your outlook with Compound Semiconductor

NASA Astrophysics Data System (ADS)

Bedrock, Claire

2007-12-01

An overwhelming proportion of the articles published in this journal come under the heading of applied research. In this field research findings impact tomorrow's products, and so it's important to keep tabs on these developments. Grant applications, for example, can carry extra weight when the potential benefits to industry are outlined alongside the gains to fundamental science. What's more, it's just plain interesting to track how key breakthroughs in understanding can drive improvements in commercial devices. Within our publication group we offer free resources that can help you keep pace with trends in part of this sector. Compound Semiconductor magazine and its associated website, compoundsemiconductor.net, cover III-V, III-N, SiC and SiGe research in academia and industry, alongside all the business news and key manufacturing technology. A high proportion of our authoritative and timely content is exclusive, and you can access it for free by completing a simple registration procedure at compoundsemiconductor.net. Three examples of feature articles published this year in Compound Semiconductor include: • Non-polar GaN reaches tipping point by Steven DenBaars, Shuji Nakamura and Jim Speck from the University of California, Santa Barbara. Although conventional GaN LEDs are a great commercial success, they suffer from an intrinsic weakness—internal electric fields that pull apart the electrons and holes and ultimately limit efficiency. However, this problem can be overcome by growing nitrides on alternate crystal planes. Although early attempts were unsuccessful, due to high defect densities in the epilayers, this is not the case with growth on the latest Mitsubishi substrates that can lead to external quantum efficiencies of 45%. In this article the authors describe the development of their non-polar material, and their promising results for LEDs and laser diodes. • Inverting the triple junction improves efficiency and flexibility by Paul Sharps and Arthur Cornfeld from solar cell producer Emcore and Mark Wanlass from the National Renewable Energy Laboratory. Conventional triple junction solar cells are already deployed for powering satellites and they are starting to win sales for terrestrial power generation. Further improvements to solar efficiency could drive further growth in both of these markets, and one of the most promising designs is the inverted triple junction. The authors describe the details of this approach, which involves growth of lattice-matched GaInP and GaAs, followed by an InGaAs cell. The germanium substrate is then removed to leave a lightweight device capable of delivering more than 30% efficiency in space and almost 40% under high concentration. • Light-emitting diodes hit the centenary milestone by Fred Schubert and Jong Kyu Kim from Rensselaer Polytechnic Institute. Accidents are not always a bad thing. They can also be the moment of discovery, as was the case for Henry Joseph Round who observed the first light emission from a semiconductor diode. Round reported this work in 1907, but it is unlikely that he could foresee the impact that the LED would have over the next century. In this article, the authors trace the evolution of the device, including the development of new materials for red, green, blue and ultimately white emission, and suggest where the next 10 years might take us. Visit compoundsemiconductor.net to read these articles and many others like them.

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Self Exchange Bias and Bi-stable Magneto-Resistance States in Amorphous TbFeCo and TbSmFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ma, Chung; Li, Xiaopu; Lu, Jiwei; Poon, Joseph; Comes, Ryan; Devaraj, Arun; Spurgeon, Steven

Amorphous ferrimagetic TbFeCo and TbSmFeCo thin films are found to exhibit strong perpendicular magnetic anisotropy. Self exchange bias effect and bi-stable magneto-resistance states are observed near compensation temperature by magnetic hysteresis loop, anomalous Hall effect and transverse magneto-resistance measurements. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb concentration distributed within the amorphous films. The observed exchange anisotropy originates from the exchange interaction between the two nanoscale amorphous phases. Exchange bias effect is used for increasing stability in spin valves and magnetic tunneling junctions. This study opens up a new platform for using amorphous ferrimagnetic thin films that require no epitaxial growth in nanodevices.. The work was supported by the Defense Threat Reduction Agency Grant and the U.S. Department of Energy.

The Afar Depression: Was There a Triple Junction Above the Mantle Plume?

NASA Astrophysics Data System (ADS)

Ebinger, C.; Wolfenden, E.; Yirgu, G.; Ayalew, D.; Eagles, G.; Gloaguen, R.; Tiberi, C.; Rowland, J. R.; Deino, A.; Tesfaye, A.; Tesfaye, S.

2002-12-01

The Red Sea - Gulf of Aden- Main Ethiopian rift systems (Afar Depression) have served as the textbook example of a R-R-R triple junction zone which formed above a mantle plume (Ethiopia-Yemen flood basalt province, 31-28 Ma). Recent work has documented the onset and propagation of seafloor along the length of the Gulf of Aden and Red Sea arms, but the timing of continental rifting had been poorly constrained. Our aims were to constrain the timing of rift initiation in each arm of the rift near the proposed Oligocene triple junction and to re-assess models for break-up above a mantle plume. Although much of the early history of rifting is deeply buried by Pliocene-Recent lavas, erosional dissection of the rift margins provides windows into the early rift history. Along the southernmost Red Sea, faults commonly marked by eruptive centers initiated at about 26 Ma, coincident with rifting along the easternmost Gulf of Aden. New data from the rift immediately south of the southernmost Red Sea basin (ca.10N) constrain the earliest rift sequences in the northern Main Ethiopian rift (MER). Field and Ar-Ar data from sequences overlying the pre-rift flood basalts show that extension in the northern MER commenced at 12-10 Ma when the two rift systems were finally linked. The active zone of extension and magmatism in the southern Red Sea and eastern Gulf of Aden, however, had migrated east and north, respectively. Summarising, rifting in southern Ethiopia had commenced by 16-18 Ma, and had propagated northward to cut across Oligo-Miocene rift structures of the Red Sea and Gulf of Aden by 10 Ma, consistent with plate kinematic data. A triple junction could have developed only during the past 10 My, long after flood basaltic magmatism. Inverse models of gravity data predict a significant step (2-4 km) in the Moho where the youthful, less extended MER breaks into the Afar Depression. Project EAGLE (UK-US-Ethiopia) is now acquiring seismic data across and along this zone to evaluate mechanisms for rift segmentation and propagation prior to breakup.

Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

2013-10-01

Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

NASA Astrophysics Data System (ADS)

Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

2017-10-01

A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

NASA Astrophysics Data System (ADS)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Process development

NASA Technical Reports Server (NTRS)

Bickler, D. B.

1985-01-01

An overview is given of seven process development activities which were presented at this session. Pulsed excimer laser processing of photovoltaic cells was presented. A different pulsed excimer laser annealing was described using a 50 w laser. Diffusion barrier research focused on lowering the chemical reactivity of amorphous thin film on silicon. In another effort adherent and conductive films were successfully achieved. Other efforts were aimed at achieving a simultaneous front and back junction. Microwave enhanced plasma deposition experiments were performed. An updated version of the Solar Array Manufacturing Industry Costing Standards (SAMICS) was presented, along with a life cycle cost analysis of high efficiency cells. The last presentation was on the evaluation of the ethyl vinyl acetate encapsulating system.

Neutron Detection using Amorphous Boron-Carbide Hetero-Junction Diodes

DTIC Science & Technology

2012-03-22

Parameter Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 B.1.1 UMKC Built-in Voltage...Electronic properties of boron carbide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2. Diode Material/Geometric Parameters ...42 6. Material parameters for Davinci model . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 x List of

Development of metal matrix composite gridlines for space photovoltaics

NASA Astrophysics Data System (ADS)

Abudayyeh, Omar Kamal

Space vehicles today are primarily powered by multi-junction photovoltaic cells due to their high efficiency and high radiation hardness in the space environment. While multi-junction solar cells provide high efficiency, microcracks develop in the crystalline semiconductor due to a variety of reasons, including: growth defects, film stress due to lattice constant mismatch, and external mechanical stresses introduced during shipping, installation, and operation. These microcracks have the tendency to propagate through the different layers of the semiconductor reaching the metal gridlines of the cell, resulting in electrically isolated areas from the busbar region, ultimately lowering the power output of the cell and potentially reducing the lifetime of the space mission. Pre-launch inspection are often expensive and difficult to perform, in which individual cells and entire modules must be replaced. In many cases, such microcracks are difficult to examine even with a thorough inspection. While repairs are possible pre-launch of the space vehicle, and even to some extent in low-to-earth missions, they are virtually impossible for deep space missions, therefore, efforts to mitigate the effects of these microcracks have substantial impact on the cell performance and overall success of the space mission. In this effort, we have investigated the use of multi-walled carbon nanotubes as mechanical reinforcement to the metal gridlines capable of bridging gaps generated in the underlying semiconductor while providing a redundant electrical conduction pathway. The carbon nanotubes are embedded in a silver matrix to create a metal matrix composite, which are later integrated onto commercial triple-junction solar cells.

Crystalline silicon photovoltaics via low-temperature TiO 2/Si and PEDOT/Si heterojunctions

NASA Astrophysics Data System (ADS)

Nagamatsu, Ken Alfred

The most important goals in developing solar cell technology are to achieve high power conversion efficiencies and lower costs of manufacturing. Solar cells based on crystalline silicon currently dominate the market because they can achieve high efficiency. However, conventional p-n junction solar cells require high-temperature diffusions of dopants, and conventional heterojunction cells based on amorphous silicon require plasma-enhanced deposition, both of which can add manufacturing costs. This dissertation investigates an alternative approach, which is to form crystalline-silicon-based solar cells using heterojunctions with materials that are easily deposited at low temperatures and without plasma enhancement, such as organic semiconductors and metal oxides. We demonstrate a heterojunction between the organic polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT), and crystalline silicon, which acts as a hole-selective contact and an alternative to a diffused p-n junction. We also present the use of a heterojunction between titanium dioxide and crystalline silicon as a passivating electron-selective contact. The Si/TiO2 heterojunction is demonstrated for the first time as a back-surface field in a crystalline silicon solar cell, and is incorporated into a PEDOT/Si device. The resulting PEDOT/Si/TiO2 solar cell represents an alternative to conventional silicon solar cells that rely on thermally-diffused junctions or plasma-deposited heterojunctions. Finally, we investigate the merits of using conductive networks of silver nanowires to enhance the photovoltaic performance of PEDOT/Si solar cells. The investigation of these materials and devices contributes to the growing body of work regarding crystalline silicon solar cells made with selective contacts.

A transparent ultraviolet triggered amorphous selenium p-n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Ichitaro; Soga, Kenichi; Overend, Mauro

2011-04-11

This paper will introduce a semitransparent amorphous selenium (a-Se) film exhibiting photovoltaic effects under ultraviolet light created through a simple and inexpensive method. We found that chlorine can be doped into a-Se through electrolysis of saturated salt water, and converts the weak p-type material into an n-type material. Furthermore, we found that a p-n diode fabricated through this process has shown an open circuit voltage of 0.35 V toward ultraviolet illumination. Our results suggest the possibility of doping control depending on the electric current during electrolysis and the possibility of developing a simple doping method for amorphous photoconductors.

Novel concepts for low-cost and high-efficient thin film solar cells

NASA Astrophysics Data System (ADS)

Gómez, D.; Menéndez, A.; Sánchez, P.; Martínez, A.; Andrés, L. J.; Menéndez, M. F.; Campos, N.; García, A.; Sánchez, B.

2011-09-01

This work presents the activities carried out at ITMA Materials Technology related to the building integration of thin film (TF) photovoltaics (PV). Three different approaches have been developed in order to achieve high efficient solar cells at low manufacturing costs: (i) a new route for manufacturing monolithical silicon based thin film solar cells on building materials, (ii) the use of metallic nanoparticles for light trapping (plasmonic effects and light scattering) and (iii) the luminescent sol-gel coating on glass for solar concentration. In the first case, amorphous silicon modules (single junction) have been successfully manufactured at lab scale on steel and commercial ceramic substrates with efficiencies of 5.4% and 4.0%, respectively. Promising initial attempts have been also made in ethylene tetrafluoroethylene (ETFE), a polymer with high potential in textile architecture. In a similar way, the development of nanotechnology based coatings (metallic nanoparticles and luminescent materials) represent the most innovative part of the work and some preliminary results are showed.

Tectonics and evolution of the Juan Fernandez microplate at the Pacific-Nazca-Antarctic triple junction

NASA Technical Reports Server (NTRS)

Anderson-Fontana, S.; Larson, R. L.; Engein, J. F.; Lundgren, P.; Stein, S.

1986-01-01

Magnetic and bathymetric profiles derived from the R/V Endeavor survey and focal mechanism studies for earthquakes on two of the Juan Fernandez microplate boundaries are analyzed. It is observed that the Nazca-Juan Fernandez pole is in the northern end of the microplate since the magnetic lineation along the East Ridge of the microplate fans to the south. The calculation of the relative motion of the Juan Fernandez-Pacific-Nazca-Antarctic four-plate system using the algorithm of Minster et al. (1974) is described. The development of tectonic and evolutionary models of the region is examined. The tectonic model reveals that the northern boundary of the Juan Fernandez microplate is a zone of compression and that the West Ridge and southwestern boundary are spreading obliquely; the evolutionary model relates the formation of the Juan Fernandez microplate to differential spreading rates at the triple junction.

Counter-rotating microplates at the Galapagos triple junction.

PubMed

Klein, Emily M; Smith, Deborah K; Williams, Clare M; Schouten, Hans

2005-02-24

An 'incipient' spreading centre east of (and orthogonal to) the East Pacific Rise at 2 degrees 40' N has been identified as forming a portion of the northern boundary of the Galapagos microplate. This spreading centre was described as a slowly diverging, westward propagating rift, tapering towards the East Pacific Rise. Here we present evidence that the 'incipient rift' has also rifted towards the east and opens anticlockwise about a pivot at its eastern end. The 'incipient rift' then bounds a second microplate, north of the clockwise-rotating Galapagos microplate. The Galapagos triple junction region, in the eastern equatorial Pacific Ocean, thus consists of two counter-rotating microplates partly separated by the Hess Deep rift. Our kinematic solution for microplate motion relative to the major plates indicates that the two counter-rotating microplates may be treated as rigid blocks driven by drag on the microplates' edges3.

Tectonic history of the north portion of the San Andreas fault system, California, inferred from gravity and magnetic anomalies

USGS Publications Warehouse

Griscom, A.; Jachens, R.C.

1989-01-01

Geologic and geophysical data for the San Andreas fault system north of San Francisco suggest that the eastern boundary of the Pacific plate migrated eastward from its presumed original position at the base of the continental slope to its present position along the San Andreas transform fault by means of a series of eastward jumps of the Mendocino triple junction. These eastward jumps total a distance of about 150 km since 29 Ma. Correlation of right-laterally displaced gravity and magnetic anomalies that now have components at San Francisco and on the shelf north of Point Arena indicates that the presently active strand of the San Andreas fault north of the San Francisco peninsula formed recently at about 5 Ma when the triple junction jumped eastward a minimum of 100 km to its present location at the north end of the San Andreas fault. -from Authors

Durvalumab and Tremelimumab in Combination With First-Line Chemotherapy in Advanced Solid Tumors

ClinicalTrials.gov

2018-05-16

Small Cell Lung Carcinoma; Carcinoma, Squamous Cell of Head and Neck; Stomach Neoplasms; Triple Negative Breast Neoplasms; Ovarian Neoplasms; Fallopian Tube Neoplasms; Peritoneal Neoplasms; Esophagogastric Junction Neoplasms; Carcinoma, Pancreatic Ductal; Esophageal Squamous Cell Carcinoma

High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uzu, Hisashi, E-mail: Hisashi.Uzu@kaneka.co.jp, E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi

2015-01-05

We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cellmore » or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.« less

Microfabrication of low-loss lumped-element Josephson circuits for non-reciprocal and parametric devices

NASA Astrophysics Data System (ADS)

Cicak, Katarina; Lecocq, Florent; Ranzani, Leonardo; Peterson, Gabriel A.; Kotler, Shlomi; Teufel, John D.; Simmonds, Raymond W.; Aumentado, Jose

Recent developments in coupled mode theory have opened the doors to new nonreciprocal amplification techniques that can be directly leveraged to produce high quantum efficiency in current measurements in microwave quantum information. However, taking advantage of these techniques requires flexible multi-mode circuit designs comprised of low-loss materials that can be implemented using common fabrication techniques. In this talk we discuss the design and fabrication of a new class of multi-pole lumped-element superconducting parametric amplifiers based on Nb/Al-AlOx/Nb Josephson junctions on silicon or sapphire. To reduce intrinsic loss in these circuits we utilize PECVD amorphous silicon as a low-loss dielectric (tanδ 5 ×10-4), resulting in nearly quantum-limited directional amplification.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

NASA Astrophysics Data System (ADS)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Side-wall spacer passivated sub-μm Josephson junction fabrication process

NASA Astrophysics Data System (ADS)

Grönberg, Leif; Kiviranta, Mikko; Vesterinen, Visa; Lehtinen, Janne; Simbierowicz, Slawomir; Luomahaara, Juho; Prunnila, Mika; Hassel, Juha

2017-12-01

We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1-3.0 kA cm-2. We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.

Broadband Pillbox Antennas.

DTIC Science & Technology

1984-09-21

Identify by block number) - FIELD GROUP SUB-GROUP Double layer pillbox antennas Triple layer pillbox antenna The possibility of designing very broadband... Design .................... 1 Broadband Feed De gn ........................................... 2 Ex mental Simulation of Double Layer Pillbox...5 REFERENCES ................................................... 6 APPENDIX - COAXIAL TO WAVEGUIDE JUNCTION DESIGN

Modeling selenite adsorption envelopes on oxides, clay minerals, and soils using the triple layer model

USDA-ARS?s Scientific Manuscript database

Selenite adsorption behavior was investigated on amorphous aluminum and iron oxides, clay minerals: kaolinite, montmorillonite, and illite, and 45 surface and subsurface soil samples from the Southwestern and Midwestern regions of the USA as a function of solution pH. Selenite adsorption decreased ...

Transient cracks and triple junctions induced by Cocos-Nazca propagating rift

NASA Astrophysics Data System (ADS)

Schouten, H.; Smith, D. K.; Zhu, W.; Montesi, L. G.; Mitchell, G. A.; Cann, J. R.

2009-12-01

The Galapagos triple junction is a ridge-ridge-ridge triple junction where the Cocos, Nazca, and Pacific plates meet around the Galapagos microplate (GMP). On the Cocos plate, north of the large gore that marks the propagating Cocos-Nazca (C-N) Rift, a 250-km-long and 50-km-wide band of NW-SE-trending cracks crosscuts the N-S-trending abyssal hills of the East Pacific Rise (EPR). These appear as a succession of minor rifts, accommodating some NE-SW extension of EPR-generated seafloor. The rifts successively intersected the EPR in triple junctions at distances of 50-100 km north of the tip of the C-N Rift. We proposed a simple crack interaction model to explain the location of the transient rifts and their junction with the EPR. The model predicts that crack locations are controlled by the stress perturbation along the EPR, induced by the dominant C-N Rift, and scaled by the distance of its tip to the EPR (Schouten et al., 2008). The model also predicts that tensile stresses are symmetric about the C-N Rift and thus, similar cracks should have occurred south of the C-N Rift prior to formation of the GMP about 1 Ma. There were no data at the time to test this prediction. In early 2009 (AT 15-41), we mapped an area on the Nazca plate south of the C-N rift out to 4 Ma. The new bathymetric data confirm the existence of a distinctive pattern of cracks south of the southern C-N gore that mirrors the pattern on the Cocos plate until about 1 Ma, and lends support to the crack interaction model. The envelope of the symmetric cracking pattern indicates that the distance between the C-N Rift tip and the EPR varied between 40 and 65 km during this time (1-4 Ma). The breakdown of the symmetry at 1 Ma accurately dates the onset of a southern plate boundary of the GMP, now Dietz Deep Rift. At present, the southern rift boundary of the GMP joins the EPR with a steep-sided, 80 km long ridge. This ridge releases the stress perturbation otherwise induced along the EPR by elastic interaction with the C-N Rift and prevents the formation of minor rifts of the type in the North of the C-N Rift. However, the seafloor displays traces of rifts formed as the Dietz Deep Rift was approaching the EPR. In fact, the present day ridge appears to have originated as one of these minor rifts, probably stabilized by enhanced magma supply from a nearby volcano at the southwestern end of Dietz Deep.

Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

NASA Astrophysics Data System (ADS)

Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

2007-05-01

Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

Can amorphization take place in nanoscale interconnects?

PubMed

Kumar, S; Joshi, K L; van Duin, A C T; Haque, M A

2012-03-09

The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and pressure are only the means. For nanoscale interconnects carrying modest current density, large vacancy concentrations may be generated without the necessity of high temperature or pressure due to the large fraction of grain boundaries and triple points. To investigate this hypothesis, we performed in situ transmission electron microscope (TEM) experiments on 200 nm thick (80 nm average grain size) aluminum specimens. Electron diffraction patterns indicate partial amorphization at modest current density of about 10(5) A cm(-2), which is too low to trigger electromigration. Since amorphization results in drastic decrease in mechanical ductility as well as electrical and thermal conductivity, further increase in current density to about 7 × 10(5) A cm(-2) resulted in brittle fracture failure. Our molecular dynamics (MD) simulations predict the formation of amorphous regions in response to large mechanical stresses (due to nanoscale grain size) and excess vacancies at the cathode side of the thin films. The findings of this study suggest that amorphization can precede electromigration and thereby play a vital role in the reliability of micro/nanoelectronic devices.

Development of a High Efficiency UVR/IRR Coverglass for Triple Junction Solar Cells

NASA Technical Reports Server (NTRS)

Russell, John; Jones, Glenn; Hall, James

2007-01-01

Cover glasses have been a necessary and integral part of space solar arrays since their inception. The main function of the cover glass is to protect the underlying solar cell from the harsh radiation environment of space. They are formed either from fused silica or specially formulated ceria doped glass types that are resistant to radiation damage, for example Pilkington's CMX, CMG, CMO. Solar cells have steadily increased in performance over the past years, from Silicon cells through textured Silicon cells to GaAs cells and the multijunction cells of today. The optimum coverglass solution for each of these cells has been different. The glass itself has also evolved. In some cases it has had its expansion coefficient matched to the cell substrate material, and in addition, added value has been derived from the application of thin film optical coatings to the coverglass. In the majority of cases this has taken the form of a single layer of MgF2 which acts as an antireflection coating. There are also conductive coatings to address electrostatic discharge issues (ESD) and Ultra Violet Reflective (UVR) and Infrared Reflective (IRR) coatings designed for thermal enhancement. Each type of coating can be applied singly or in combination. This paper describes a new type of UVR/IRR (or blue red reflector BRR) specifically designed for triple junction solar cells. For space applications, where radiation is the principal mechanism for removing heat from the satellite, it is the emittance and solar absorptance that primarily determine the temperature of the array. It is therefore essential that any coatings designed to have an effect on the temperature by reducing the solar absorption have a minimal effect on the overall emittance.

Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

NASA Astrophysics Data System (ADS)

Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

2017-02-01

Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

Inverse models of gravity data from the Red Sea-Aden-East African rifts triple junction zone

NASA Astrophysics Data System (ADS)

Tiberi, Christel; Ebinger, Cynthia; Ballu, Valérie; Stuart, Graham; Oluma, Befekadu

2005-11-01

The combined effects of stretching and magmatism permanently modify crustal structure in continental rifts and volcanic passive margins. The Red Sea-Gulf of Aden-Ethiopian rift triple junction zone provides a unique opportunity to examine incipient volcanic margin formation above or near an asthenospheric upwelling. We use gravity inversions and forward modelling to examine lateral variations in crust and upper mantle structure across the Oligocene flood basalt province, which has subsequently been extended to form the Red Sea, Gulf of Aden and Main Ethiopian rifts. We constrain and test the obtained models with new and existing seismic estimates of crustal thickness. In particular, we predict crustal thickness across the uplifted plateaux and rift valleys, and calibrate our results with recent receiver function analyses. We discuss the results together with a 3-D distribution of density contrasts in terms of magmatic margin structure. The main conclusions are: (1) a denser (+240 kg m-3) and/or a thinner crust (23 km) in the triple junction zone of the Afar depression; (2) a shallower Moho is found along the Main Ethiopian rift axis, with crustal thickness values decreasing from 32-33 km in the south to 24 km beneath the southern Afar depression; (3) thicker crust (~40 km) is present beneath the broad uplifted Oligocene flood basalt province, suggesting that crustal underplating compensates most of the plateau uplift and (4) possible magmatic underplating or a segmentation in the rift structure is observed at ~8°N, 39°W beneath several collapsed caldera complexes. These results indicate that magmatism has profoundly changed crustal structure throughout the flood basalt province.

Initiation and Along-Axis Segmentation of Seaward-Dipping Volcanic Sequences Captured in Afar

NASA Astrophysics Data System (ADS)

Ebinger, C.; Wolfenden, E.; Yirgu, G.; Keir, D.

2003-12-01

The Afar triple junction zone provides a unique opportunity to examine the early development of magmatic margins, as respective limbs of the triple junction capture different stages of the breakup process. Initial rifting in the southernmost Red Sea occurred concurrent with, or soon after flood basaltic magmatism at ~31 Ma in the Ethiopia-Yemen plume province, whereas the northern part of the Main Ethiopian rift initiated after 12 Ma. Both rift systems initiated with the development of high-angle border fault systems bounding broad basins, but 8-10 My after rifting we see riftward migration of strain from the western border fault to narrow zones of increasingly more basaltic magmatism. These localised zones of faulting and volcanism (magmatic segments) show a segmentation independent of the border fault segmentation. The much older, more evolved magmatic segments in the southern Red Sea, where not onlapped by Pliocene-Recent sedimentary strata, dip steeply riftward and define a regional eastward flexure into transitional oceanic crust, as indicated by gravity models constrained by seismic refraction and receiver function data. The southern Red Sea magmatic segments have been abandoned in Pliocene-Recent triple junction reorganisations, whereas the process of seaward-dipping volcanic sequence emplacement is ongoing in the seismically and volcanically active Main Ethiopian rift. Field, remote sensing, gravity, and seismicity data from the Main Ethiopian and southern Red Sea rifts indicate that seaward-dipping volcanic sequences initiate in moderately stretched continental crust above a narrow zone of dike-intrusion. Our comparison of active and ancient magmatic segments show that they are the precursors to seaward-dipping volcanic sequences analogous to those seen on passive continental margins, and provides insights into the initiation of along-axis segmentation of seafloor-spreading centers.

Assessment of Late Quaternary strain partitioning in the Afar Triple Junction: Dobe and Hanle grabens, Ethiopia and Djibouti

NASA Astrophysics Data System (ADS)

Polun, S. G.; Stockman, M. B.; Hickcox, K.; Horrell, D.; Tesfaye, S.; Gomez, F. G.

2015-12-01

As the only subaerial exposure of a ridge - ridge - ridge triple junction, the Afar region of Ethiopia and Djibouti offers a rare opportunity to assess strain partitioning within this type of triple junction. Here, the plate boundaries do not link discretely, but rather the East African rift meets the Red Sea and Gulf of Aden rifts in a zone of diffuse normal faulting characterized by a lack of magmatic activity, referred to as the central Afar. An initial assessment of Late Quaternary strain partitioning is based on faulted landforms in the Dobe - Hanle graben system in Ethiopia and Djibouti. These two extensional basins are connected by an imbricated accommodation zone. Several fault scarps occur within terraces formed during the last highstand of Lake Dobe, around 5 ka - they provide a means of calibrating a numerical model of fault scarp degradation. Additional timing constraints will be provided by pending exposure ages. The spreading rates of both grabens are equivalent, however in Dobe graben, extension is partitioned 2:1 between northern, south dipping faults and the southern, north dipping fault. Extension in Hanle graben is primarily focused on the north dipping Hanle fault. On the north margin of Dobe graben, the boundary fault bifurcates, where the basin-bordering fault displays a significantly higher modeled uplift rate than the more distal fault, suggesting a basinward propagation of faulting. On the southern Dobe fault, surveyed fault scarps have ages ranging from 30 - 5 ka with uplift rates of 0.71, 0.47, and 0.68 mm/yr, suggesting no secular variation in slip rates from the late Plestocene through the Holocene. These rates are converted into horizontal stretching estimates, which are compared with regional strain estimated from velocities of relatively sparse GPS data.

A Triple Culture Model of the Blood-Brain Barrier Using Porcine Brain Endothelial cells, Astrocytes and Pericytes.

PubMed

Thomsen, Louiza Bohn; Burkhart, Annette; Moos, Torben

2015-01-01

In vitro blood-brain barrier (BBB) models based on primary brain endothelial cells (BECs) cultured as monoculture or in co-culture with primary astrocytes and pericytes are useful for studying many properties of the BBB. The BECs retain their expression of tight junction proteins and efflux transporters leading to high trans-endothelial electric resistance (TEER) and low passive paracellular permeability. The BECs, astrocytes and pericytes are often isolated from small rodents. Larger species as cows and pigs however, reveal a higher yield, are readily available and have a closer resemblance to humans, which make them favorable high-throughput sources for cellular isolation. The aim of the present study has been to determine if the preferable combination of purely porcine cells isolated from the 6 months old domestic pigs, i.e. porcine brain endothelial cells (PBECs) in co-culture with porcine astrocytes and pericytes, would compare with PBECs co-cultured with astrocytes and pericytes isolated from newborn rats with respect to TEER value and low passive permeability. The astrocytes and pericytes were grown both as contact and non-contact co-cultures as well as in triple culture to examine their effects on the PBECs for barrier formation as revealed by TEER, passive permeability, and expression patterns of tight junction proteins, efflux transporters and the transferrin receptor. This syngenic porcine in vitro BBB model is comparable to triple cultures using PBECs, rat astrocytes and rat pericytes with respect to TEER formation, low passive permeability, and expression of hallmark proteins signifying the brain endothelium (tight junction proteins claudin 5 and occludin, the efflux transporters P-glycoprotein (PgP) and breast cancer related protein (BCRP), and the transferrin receptor).

Pleistocene vertical motions of the Costa Rican outer forearc from subducting topography and a migrating fracture zone triple junction

USGS Publications Warehouse

Edwards, Joel H.; Kluesner, Jared W.; Silver, Eli A.; Bangs, Nathan L.

2018-01-01

Understanding the links between subducting slabs and upper-plate deformation is a longstanding goal in the field of tectonics. New 3D seismic sequence stratigraphy, mapped within the Costa Rica Seismogenesis Project (CRISP) seismic-reflection volume offshore southern Costa Rica, spatiotemporally constrains several Pleistocene outer forearc processes and provides clearer connections to subducting plate dynamics. Three significant shelf and/or slope erosional events at ca. 2.5–2.3 Ma, 1.95–1.78 Ma, and 1.78–1.19 Ma, each with notable differences in spatial extent, volume removed, and subsequent margin response, caused abrupt shifts in sedimentation patterns and rates. These shifts, coupled with observed deformation, suggest three primary mechanisms for Pleistocene shelf and slope vertical motions: (1) regional subaerial erosion and rapid subsidence linked to the southeastward Panama Fracture Zone triple-junction migration, with associated abrupt bathymetric variations and plate kinematic changes; (2) transient, kilometer-scale uplift and subsidence due to inferred subducting plate topography; and (3) progressive outer wedge shortening accommodated by landward- and seaward-dipping thrust faults and fold development due to the impinging Cocos Ridge. Furthermore, we find that the present-day wedge geometry (to within ∼3 km along strike) has been maintained through the Pleistocene, in contrast to modeled landward margin retreat. We also observe that deformation, i.e., extension and shortening, is decoupled from net margin subsidence. Our findings do not require basal erosion, and they suggest that the vertical motions of the Costa Rican outer forearc are not the result of a particular continuous process, but rather are a summation of plate to plate changes (e.g., passage of a fracture zone triple junction) and episodic events (e.g., subducting plate topography).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Results of the 1995 JPL balloon flight solar cell calibration program

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Weiss, R. S.

1995-01-01

The Jet Propulsion Laboratory (JPL) solar cell calibration program was conceived to produce reference standards for the purpose of accurately setting solar simulator intensities. The concept was to fly solar cells on a high-altitude balloon, to measure their output at altitudes near 120,000 ft (36.6 km), to recover the cells, and to use them as reference standards. The procedure is simple. The reference cell is placed in the simulator beam, and the beam intensity is adjusted until the reference cell reads the same as it read on the balloon. As long as the reference cell has the same spectral response as the cells or panels to be measured, this is a very accurate method of setting the intensity. But as solar cell technology changes, the spectral response of the solar cells changes also, and reference standards using the new technology must be built and calibrated. Until the summer of 1985, there had always been a question as to how much the atmosphere above the balloon modified the solar spectrum. If the modification was significant, the reference cells might not have the required accuracy. Solar cells made in recent years have increasingly higher blue responses, and if the atmosphere has any effect at all, it would be expected to modify the calibration of these newer blue cells much more so than for cells made in the past. JPL has been flying calibration standards on high-altitude balloons since 1963 and continues to organize a calibration balloon flight at least once a year. The 1995 flight was the 48th flight in this series. The 1995 flight incorporated 46 solar cell modules from 7 different participants. The payload included Si, amorphous Si, GaAs, GaAs/Ge, dual junction cells, top and bottom sections of dual junction cells, and a triple junction cell. A new data acquisition system was built for the balloon flights and flown for the first time on the 1995 flight. This system allows the measurement of current-voltage (I-V) curves for 20 modules in addition to measurement of modules with fixed loads as had been done in the past.

The Voronoi Implicit Interface Method for computing multiphase physics

PubMed Central

Saye, Robert I.; Sethian, James A.

2011-01-01

We introduce a numerical framework, the Voronoi Implicit Interface Method for tracking multiple interacting and evolving regions (phases) whose motion is determined by complex physics (fluids, mechanics, elasticity, etc.), intricate jump conditions, internal constraints, and boundary conditions. The method works in two and three dimensions, handles tens of thousands of interfaces and separate phases, and easily and automatically handles multiple junctions, triple points, and quadruple points in two dimensions, as well as triple lines, etc., in higher dimensions. Topological changes occur naturally, with no surgery required. The method is first-order accurate at junction points/lines, and of arbitrarily high-order accuracy away from such degeneracies. The method uses a single function to describe all phases simultaneously, represented on a fixed Eulerian mesh. We test the method’s accuracy through convergence tests, and demonstrate its applications to geometric flows, accurate prediction of von Neumann’s law for multiphase curvature flow, and robustness under complex fluid flow with surface tension and large shearing forces. PMID:22106269

The Voronoi Implicit Interface Method for computing multiphase physics.

PubMed

Saye, Robert I; Sethian, James A

2011-12-06

We introduce a numerical framework, the Voronoi Implicit Interface Method for tracking multiple interacting and evolving regions (phases) whose motion is determined by complex physics (fluids, mechanics, elasticity, etc.), intricate jump conditions, internal constraints, and boundary conditions. The method works in two and three dimensions, handles tens of thousands of interfaces and separate phases, and easily and automatically handles multiple junctions, triple points, and quadruple points in two dimensions, as well as triple lines, etc., in higher dimensions. Topological changes occur naturally, with no surgery required. The method is first-order accurate at junction points/lines, and of arbitrarily high-order accuracy away from such degeneracies. The method uses a single function to describe all phases simultaneously, represented on a fixed Eulerian mesh. We test the method's accuracy through convergence tests, and demonstrate its applications to geometric flows, accurate prediction of von Neumann's law for multiphase curvature flow, and robustness under complex fluid flow with surface tension and large shearing forces.

The Voronoi Implicit Interface Method for computing multiphase physics

DOE PAGES

Saye, Robert I.; Sethian, James A.

2011-11-21

In this paper, we introduce a numerical framework, the Voronoi Implicit Interface Method for tracking multiple interacting and evolving regions (phases) whose motion is determined by complex physics (fluids, mechanics, elasticity, etc.), intricate jump conditions, internal constraints, and boundary conditions. The method works in two and three dimensions, handles tens of thousands of interfaces and separate phases, and easily and automatically handles multiple junctions, triple points, and quadruple points in two dimensions, as well as triple lines, etc., in higher dimensions. Topological changes occur naturally, with no surgery required. The method is first-order accurate at junction points/lines, and of arbitrarilymore » high-order accuracy away from such degeneracies. The method uses a single function to describe all phases simultaneously, represented on a fixed Eulerian mesh. Finally, we test the method’s accuracy through convergence tests, and demonstrate its applications to geometric flows, accurate prediction of von Neumann’s law for multiphase curvature flow, and robustness under complex fluid flow with surface tension and large shearing forces.« less

Oceanographic Telecommuting: Going to Sea Virtually

NASA Astrophysics Data System (ADS)

Smith, Deborah K.; Lemmond, Peter

2005-09-01

Oceanography in the 21st century is on the verge of changing the way it does business. Telecommuting from office to sea is about to make the same impact as telecommuting between home and the office did 20 years ago. A recent geophysical survey highlighted the role that telecommuting will soon play in ocean research. In June 2005, R/V Knorr was in the middle of the Atlantic Ocean conducting a geophysical survey of a region centered at 13°N along the Mid-Atlantic Ridge in the general area of the diffuse triple junction between the North America (NA),Africa (AF), and South America (SA) plates. This region is particularly notable because of a unique zone of seismicity that occurs ~70 km west of the ridge axis between 14°20'N and 12°50'N.The survey conducted on this cruise (KN182-3) was a first step toward understanding how slow spreading lithosphere is deforming in the NA-SA-AF triple junction region.

Aseismic Transform Fault Slip at the Mendocino Triple Junction From Characteristically Repeating Earthquakes

NASA Astrophysics Data System (ADS)

Materna, Kathryn; Taira, Taka'aki; Bürgmann, Roland

2018-01-01

The Mendocino Triple Junction (MTJ), at the northern terminus of the San Andreas Fault system, is an actively deforming plate boundary region with poorly constrained estimates of seismic coupling on most offshore fault surfaces. Characteristically repeating earthquakes provide spatial and temporal descriptions of aseismic creep at the MTJ, including on the oceanic transform Mendocino Fault Zone (MFZ) as it subducts beneath North America. Using a dataset of earthquakes from 2008 to 2017, we find that the easternmost segment of the MFZ displays creep during this period at about 65% of the long-term slip rate. We also find creep at slower rates on the shallower strike-slip interface between the Pacific plate and the North American accretionary wedge, as well as on a fault that accommodates Gorda subplate internal deformation. After a nearby M5.7 earthquake in 2015, we observe a possible decrease in aseismic slip on the near-shore MFZ that lasts from 2015 to at least early 2017.

Grain Refinement Kinetics in a Low Alloyed Cu–Cr–Zr Alloy Subjected to Large Strain Deformation

PubMed Central

Morozova, Anna; Borodin, Elijah; Bratov, Vladimir; Zherebtsov, Sergey; Kaibyshev, Rustam

2017-01-01

This paper investigates the microstructural evolution and grain refinement kinetics of a solution-treated Cu–0.1Cr–0.06Zr alloy during equal channel angular pressing (ECAP) at a temperature of 673 K via route BC. The microstructural change during plastic deformation was accompanied by the formation of the microband and an increase in the misorientations of strain-induced subboundaries. We argue that continuous dynamic recrystallization refined the initially coarse grains, and discuss the dynamic recrystallization kinetics in terms of grain/subgrain boundary triple junction evolution. A modified Johnson–Mehl–Avrami–Kolmogorov relationship with a strain exponent of about 1.49 is used to express the strain dependence of the triple junctions of high-angle boundaries. Severe plastic deformation by ECAP led to substantial strengthening of the Cu–0.1Cr–0.06Zr alloy. The yield strength increased from 60 MPa in the initial state to 445 MPa after a total strain level of 12. PMID:29210990

Investigation on the formation process of single-crystalline GaO x barrier in Fe/GaO x /MgO/Fe magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Krishna, N. S.; Doko, N.; Matsuo, N.; Saito, H.; Yuasa, S.

2017-11-01

We have grown Fe(0 0 1)/GaO x (0 0 1)/MgO(0 0 1)/Fe(0 0 1) magnetic tunnel junctions (MTJs) with or without in situ annealing after the deposition of GaO x layer and performed structural characterizations by focusing on the formation process of the single-crystalline GaO x . It was found that, even without the in situ annealing, the as-grown GaO x grown on the MgO was mostly single-crystalline except near the surface region (amorphous). The crystallization temperature of the amorphous region was reduced from 500 °C down to 250 °C by depositing the Fe upper electrode (poly-crystalline). It was clarified that the crystallization of the amorphous region near the Fe/GaO x interface caused the realignments of the crystal grains in the poly-crystalline Fe upper electrode, and, as a result, the fully epitaxial Fe/GaO x /MgO/Fe structure is eventually formed. All the MTJs showed high tunneling magnetoresistance ratios (about 100%) at room temperature, which was almost independent of the formation temperature of the single-crystalline GaO x .

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Interaction of Light with Metallized Ultrathin Silicon Membrane

NASA Astrophysics Data System (ADS)

Shome, Krishanu

Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the absorption profile of the solar cell to target near infrared part of the solar spectrum. A correspondence is found between the simulation absorption results with the experimental spectral response of the solar cells. This helps in designing metallized solar cells with ITO layer to improve absorption and hence the efficiency.

Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy

NASA Astrophysics Data System (ADS)

Shu, Guoyang; Dai, Bing; Ralchenko, V. G.; Khomich, A. A.; Ashkinazi, E. E.; Bolshakov, A. P.; Bokova-Sirosh, S. N.; Liu, Kang; Zhao, Jiwen; Han, Jiecai; Zhu, Jiaqi

2017-04-01

We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.

Modeling the Blood-Brain Barrier in a 3D triple co-culture microfluidic system.

PubMed

Adriani, G; Ma, D; Pavesi, A; Goh, E L K; Kamm, R D

2015-01-01

The need for a blood-brain barrier (BBB) model that accurately mimics the physiological characteristics of the in-vivo situation is well-recognized by researchers in academia and industry. However, there is currently no in-vitro model allowing studies of neuronal growth and/or function influenced by factors from the blood that cross through the BBB. Therefore, we established a 3D triple co-culture microfluidic system using human umbilical vein endothelial cells (HUVEC) together with primary rat astrocytes and neurons. Immunostaining confirmed the successful triple co-culture system consisting of an intact BBB with tight intercellular junctions in the endothelial monolayer. The BBB selective permeability was determined by a fluorescent-based assay using dextrans of different molecular weights. Finally, neuron functionality was demonstrated by calcium imaging.

High Aspect Ratio Semiconductor Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redwing, Joan; Mallouk, Tom; Mayer, Theresa

2013-05-17

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less

[Activities of Dept. of Geological Sciences, Colorado University

NASA Technical Reports Server (NTRS)

Bilham, Roger

1997-01-01

Using remotely sensed data and GPS observations we completed a study of neotectonic processes responsible for landscape changes in an area of active extensional deformation and volcanism. The findings from this study describe the extensional processes operating in the region of the Afar triple junction and the northern Ethiopian rift.

Triple junction orogeny: tectonic evolution of the Pan-African Northern Damara Belt, Namibia

NASA Astrophysics Data System (ADS)

Lehmann, Jérémie; Saalmann, Kerstin; Naydenov, Kalin V.; Milani, Lorenzo; Charlesworth, Eugene G.; Kinnaird, Judith A.; Frei, Dirk; Kramers, Jan D.; Zwingmann, Horst

2014-05-01

Trench-trench-trench triple junctions are generally geometrically and kinematically unstable and therefore can result at the latest stages in complicated collisional orogenic belts. In such geodynamic sites, mechanism and timescale of deformations that accommodate convergence and final assembly of the three colliding continental plates are poorly studied. In western Namibia, Pan-African convergence of three cratonic blocks led to pene-contemporaneous closure of two highly oblique oceanic domains and formation of the triple junction Damara Orogen where the NE-striking Damara Belt abuts to the west against the NNW-striking Kaoko-Gariep Belt. Detailed description of structures and microstructures associated with remote sensing analysis, and dating of individual deformation events by means of K-Ar, Ar-Ar (micas) and U-Pb (zircon) isotopic studies from the Northern Damara Belt provide robust constraints on the tectonic evolution of this palaeo-triple junction orogeny. There, passive margin sequences of the Neoproterozoic ocean were polydeformed and polymetamorphosed to the biotite zone of the greenschist facies to up to granulite facies and anatexis towards the southern migmatitic core of the Central Damara Belt. Subtle relict structures and fold pattern analyses reveal the existence of an early D1 N-S shortening event, tentatively dated between ~635 Ma and ~580 Ma using published data. D1 structures were almost obliterated by pervasive and major D2 E-W coaxial shortening, related to the closure of the Kaoko-Gariep oceanic domain and subsequent formation of the NNW-striking Kaoko-Gariep Belt to the west of the study area. Early, km-scale D1 E-W trending steep folds were refolded during this D2 event, producing either Type I or Type II fold interference patterns visible from space. The D2 E-W convergence could have lasted until ~533 Ma based on published and new U-Pb ages. The final D3 NW-SE convergence in the northernmost Damara Belt produced a NE-striking deformation front in weak metasedimentary rocks during SE-directed indentation of a rigid Paleoproterozoic basement. In the central and southern parts of the Northern Damara Belt, D3 is mostly expressed by km-scale local Type I fold interference patterns formed by the refolding of D2 upright synclines as well as bending around a steep axis of the D2 refolded folds and steep S2 multilayer. In the western part however, where the two orthogonal trends of the Damara and Kaoko-Gariep Belts meet, D3 is described in literature as sinistral shearing along reactivated steep S2 planes that is associated with steep-hinge folds with steep NE-striking axial planes. Our new ages indicate that D3 lasted from ~513 Ma to ~460 Ma throughout the entire Northern Damara Belt. These results document for the first time a regional-scale early Pan-African N-S shortening event of uncertain geotectonic significance. They furthermore indicate that two competing orthogonal collisional systems have contributed in resolving instabilities at the triple orogenic junction over a period in the order of ~100 m.y. and could therefore account for the assembly of the three cratons. The E-W convergence was preponderant in strength and pre-dates the NW-SE one, the latter being associated with localized sinistral shearing along the Kaoko Belt interface in the westernmost Northern Damara Belt.

Shear zone junctions: Of zippers and freeways

NASA Astrophysics Data System (ADS)

Passchier, Cees W.; Platt, John P.

2017-02-01

Ductile shear zones are commonly treated as straight high-strain domains with uniform shear sense and characteristic curved foliation trails, bounded by non-deforming wall rock. Many shear zones, however, are branched, and if movement on such branches is contemporaneous, the resulting shape can be complicated and lead to unusual shear sense arrangement and foliation geometries in the wall rock. For Y-shaped shear zone triple junctions with three joining branches and transport direction at a high angle to the branchline, only eight basic types of junction are thought to be stable and to produce significant displacement. The simplest type, called freeway junctions, have similar shear sense in all three branches. The other types show joining or separating behaviour of shear zone branches similar to the action of a zipper. Such junctions may have shear zone branches that join to form a single branch (closing zipper junction), or a single shear zone that splits to form two branches, (opening zipper junction). All categories of shear zone junctions show characteristic foliation patterns and deflection of markers in the wall rock. Closing zipper junctions are unusual, since they form a non-active zone with opposite deflection of foliations in the wall rock known as an extraction fault or wake. Shear zipper junctions can form domains of overprinting shear sense along their flanks. A small and large field example are given from NE Spain and Eastern Anatolia. The geometry of more complex, 3D shear zone junctions with slip parallel and oblique to the branchline is briefly discussed.

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

PubMed Central

2013-01-01

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

A directional nucleation-zipping mechanism for triple helix formation

PubMed Central

Alberti, Patrizia; Arimondo, Paola B.; Mergny, Jean-Louis; Garestier, Thérèse; Hélène, Claude; Sun, Jian-Sheng

2002-01-01

A detailed kinetic study of triple helix formation was performed by surface plasmon resonance. Three systems were investigated involving 15mer pyrimidine oligonucleotides as third strands. Rate constants and activation energies were validated by comparison with thermodynamic values calculated from UV-melting analysis. Replacement of a T·A base pair by a C·G pair at either the 5′ or the 3′ end of the target sequence allowed us to assess mismatch effects and to delineate the mechanism of triple helix formation. Our data show that the association rate constant is governed by the sequence of base triplets on the 5′ side of the triplex (referred to as the 5′ side of the target oligopurine strand) and provides evidence that the reaction pathway for triple helix formation in the pyrimidine motif proceeds from the 5′ end to the 3′ end of the triplex according to the nucleation-zipping model. It seems that this is a general feature for all triple helices formation, probably due to the right-handedness of the DNA double helix that provides a stronger base stacking at the 5′ than at the 3′ duplex–triplex junction. Understanding the mechanism of triple helix formation is not only of fundamental interest, but may also help in designing better triple helix-forming oligonucleotides for gene targeting and control of gene expression. PMID:12490709

Liquid-vapor equilibrium and interfacial properties of square wells in two dimensions

NASA Astrophysics Data System (ADS)

Armas-Pérez, Julio C.; Quintana-H, Jacqueline; Chapela, Gustavo A.

2013-01-01

Liquid-vapor coexistence and interfacial properties of square wells in two dimensions are calculated. Orthobaric densities, vapor pressures, surface tensions, and interfacial thicknesses are reported. Results are presented for a series of potential widths λ* = 1.4, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, and 5, where λ* is given in units of the hard core diameter σ. Critical and triple points are explored. No critical point was found for λ* < 1.4. Corresponding states principle analysis is performed for the whole series. For λ* = 1.4 and 1.5 evidence is presented that at an intermediate temperature between the critical and the triple point temperatures the liquid branch becomes an amorphous solid. This point is recognized in Armas-Pérez et al. [unpublished] as a hexatic phase transition. It is located at reduced temperatures T* = 0.47 and 0.35 for λ* = 1.4 and 1.5, respectively. Properties such as the surface tension, vapor pressure, and interfacial thickness do not present any discontinuity at these points. This amorphous solid branch does not follow the corresponding state principle, which is only applied to liquids and gases.

Tritiated amorphous silicon for micropower applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kherani, N.P.; Kosteski, T.; Zukotynski, S.

1995-10-01

The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in themore » visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.« less

Phase Ib, Dose Escalation Study of Oral LDE225 in Combination With BKM120 in Patients With Advanced Solid Tumors

ClinicalTrials.gov

2016-02-18

Dose Escalation; Safety; Preliminary Efficacy; Advanced Solid Tumors; Metastatic Breast Cancer; Advanced Pancreatic Adenocarcinoma; Metastatic Colorectal Cancer; Recurrent Glioblastoma Multiforme; Gastric Cancer; Gastroesophageal Junction Cancer; Triple Negative Metastatic Breast Cancer; Hormone Receptor Positive (ER+/PR+, and Her2-) Metastatic Breast Cancer

Use of Hot Rolling for Generating Low Deviation Twins and a Disconnected Random Boundary Network in Inconel 600 Alloy

NASA Astrophysics Data System (ADS)

Sahu, Sandeep; Yadav, Prabhat Chand; Shekhar, Shashank

2018-02-01

In this investigation, Inconel 600 alloy was thermomechanically processed to different strains via hot rolling followed by a short-time annealing treatment to determine an appropriate thermomechanical process to achieve a high fraction of low-Σ CSL boundaries. Experimental results demonstrate that a certain level of deformation is necessary to obtain effective "grain boundary engineering"; i.e., the deformation must be sufficiently high to provide the required driving force for postdeformation static recrystallization, yet it should be low enough to retain a large fraction of original twin boundaries. Samples processed in such a fashion exhibited 77 pct length fraction of low-Σ CSL boundaries, a dominant fraction of which was from Σ3 ( 64 pct), the latter with very low deviation from its theoretical misorientation. The application of hot rolling also resulted in a very low fraction of Σ1 ( 1 pct) boundaries, as desired. The process also leads to so-called "triple junction engineering" with the generation of special triple junctions, which are very effective in disrupting the connectivity of the random grain boundary network.

Tension, cell shape and triple-junction angle anisotropy in the Drosophila germband

NASA Astrophysics Data System (ADS)

Lacy, Monica; Hutson, M. Shane; Meyer, Christian; McDonald, Xena

In the field of tissue mechanics, the embryonic development of Drosophila melanogaster offers many opportunities for study. One of Drosophila's most crucial morphogenetic stages is the retraction of an epithelial tissue called the germband. During retraction, the segments of the retracting germband, as well as the individual germband cells, elongate in response to forces from a connected tissue, the amnioserosa. Modeling of this elongation, based on tissue responses to laser wounding, has plotted the internal germband tension against the external amnioserosa stress, creating a phase space to determine points and regions corresponding to stable elongation. Although the resulting fits indicate a necessary opposition of internal and external forces, they are inconclusive regarding the exact balance. We will present results testing the model predictions by measuring cell shapes and the correlations between cell-edge directions and triple-junction angles. These measures resolve the ambiguity in pinpointing the internal-external force balance for each germband segment. Research was supported by NIH Grant Numbers 1R01GM099107 and 1R21AR068933.

Metallic Junction Thermoelectric Device Simulations

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2017-01-01

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

A Review on Forearc Ophiolite Obduction, Adakite-Like Generation, and Slab Window Development at the Chile Triple Junction Area: Uniformitarian Framework for Spreading-Ridge Subduction

NASA Astrophysics Data System (ADS)

Bourgois, Jacques; Lagabrielle, Yves; Martin, Hervé; Dyment, Jérôme; Frutos, Jose; Cisternas, Maria Eugenia

2016-10-01

This paper aggregates the main basic data acquired along the Chile Triple Junction (CTJ) area (45°-48°S), where an active spreading center is presently subducting beneath the Andean continental margin. Updated sea-floor kinematics associated with a comprehensive review of geologic, geochemical, and geophysical data provide new constraints on the geodynamics of this puzzling area. We discuss: (1) the emplacement mode for the Pleistocene Taitao Ridge and the Pliocene Taitao Peninsula ophiolite bodies. (2) The occurrence of these ophiolitic complexes in association with five adakite-like plutonic and volcanic centers of similar ages at the same restricted locations. (3) The inferences from the co-occurrence of these sub-coeval rocks originating from the same subducting oceanic lithosphere evolving through drastically different temperature-pressure ( P- T) path: low-grade greenschist facies overprint and amphibolite-eclogite transition, respectively. (4) The evidences that document ridge-jump events and associated microplate individualization during subduction of the SCR1 and SCR-1 segments: the Chonos and Cabo Elena microplates, respectively. The ridge-jump process associated with the occurrence of several closely spaced transform faults entering subduction is controlling slab fragmentation, ophiolite emplacement, and adakite-like production and location in the CTJ area. Kinematic inconsistencies in the development of the Patagonia slab window document an 11- km westward jump for the SCR-1 spreading segment at ~6.5-to-6.8 Ma. The SCR-1 spreading center is relocated beneath the North Patagonia Icefield (NPI). We argue that the deep-seated difference in the dynamically sustained origin of the high reliefs of the North and South Patagonia Icefield (NPI and SPI) is asthenospheric convection and slab melting, respectively. The Chile Triple Junction area provides the basic constraints to define the basic signatures for spreading-ridge subduction beneath an Andean-type margin.

A model for Iapetan rifting of Laurentia based on Neoproterozoic dikes and related rocks

USGS Publications Warehouse

Burton, William C.; Southworth, Scott

2010-01-01

Geologic evidence of the Neoproterozoic rifting of Laurentia during breakup of Rodinia is recorded in basement massifs of the cratonic margin by dike swarms, volcanic and plutonic rocks, and rift-related clastic sedimentary sequences. The spatial and temporal distribution of these geologic features varies both within and between the massifs but preserves evidence concerning the timing and nature of rifting. The most salient features include: (1) a rift-related magmatic event recorded in the French Broad massif and the southern and central Shenandoah massif that is distinctly older than that recorded in the northern Shenandoah massif and northward; (2) felsic volcanic centers at the north ends of both French Broad and Shenandoah massifs accompanied by dike swarms; (3) differences in volume between massifs of cover-sequence volcanic rocks and rift-related clastic rocks; and (4) WNW orientation of the Grenville dike swarm in contrast to the predominately NE orientation of other Neoproterozoic dikes. Previously proposed rifting mechanisms to explain these features include rift-transform and plume–triple-junction systems. The rift-transform system best explains features 1, 2, and 3, listed here, and we propose that it represents the dominant rifting mechanism for most of the Laurentian margin. To explain feature 4, as well as magmatic ages and geochemical trends in the Northern Appalachians, we propose that a plume–triple-junction system evolved into the rift-transform system. A ca. 600 Ma mantle plume centered east of the Sutton Mountains generated the radial dike swarm of the Adirondack massif and the Grenville dike swarm, and a collocated triple junction generated the northern part of the rift-transform system. An eastern branch of this system produced the Long Range dike swarm in Newfoundland, and a subsequent western branch produced the ca. 554 Ma Tibbit Hill volcanics and the ca. 550 Ma rift-related magmatism of Newfoundland.

Measuring Aseismic Slip through Characteristically Repeating Earthquakes at the Mendocino Triple Junction, Northern California

NASA Astrophysics Data System (ADS)

Materna, K.; Taira, T.; Burgmann, R.

2016-12-01

The Mendocino Triple Junction (MTJ), at the transition point between the San Andreas fault system, the Mendocino Transform Fault, and the Cascadia Subduction Zone, undergoes rapid tectonic deformation and produces more large (M>6.0) earthquakes than any region in California. Most of the active faults of the triple junction are located offshore, making it difficult to characterize both seismic slip and aseismic creep. In this work, we study aseismic creep rates near the MTJ using characteristically repeating earthquakes (CREs) as indicators of creep rate. CREs are generally interpreted as repeated failures of the same seismic patch within an otherwise creeping fault zone; as a consequence, the magnitude and recurrence time of the CREs can be used to determine a fault's creep rate through empirically calibrated scaling relations. Using seismic data from 2010-2016, we identify CREs as recorded by an array of eight 100-Hz PBO borehole seismometers deployed in the Cape Mendocino area. For each event pair with epicenters less than 30 km apart, we compute the cross-spectral coherence of 20 seconds of data starting one second before the P-wave arrival. We then select pairs with high coherence in an appropriate frequency band, which is determined uniquely for each event pair based on event magnitude, station distance, and signal-to-noise ratio. The most similar events (with median coherence above 0.95 at two or more stations) are selected as CREs and then grouped into CRE families, and each family is used to infer a local creep rate. On the Mendocino Transform Fault, we find relatively high creep rates of >5 cm/year that increase closer to the Gorda Ridge. Closer to shore and to the MTJ itself, we find many families of repeaters on and off the transform fault with highly variable creep rates, indicative of the complex deformation that takes place there.

Tandem junction amorphous semiconductor photovoltaic cell

DOEpatents

Dalal, V.L.

1983-06-07

A photovoltaic stack comprising at least two p[sup +]i n[sup +] cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p[sup +]i n[sup +] cells. 3 figs.

Tandem junction amorphous semiconductor photovoltaic cell

DOEpatents

Dalal, Vikram L.

1983-01-01

A photovoltaic stack comprising at least two p.sup.+ i n.sup.+ cells in optical series, said cells separated by a transparent ohmic contact layer(s), provides a long optical path for the absorption of photons while preserving the advantageous field-enhanced minority carrier collection arrangement characteristic of p.sup.+ i n.sup.+ cells.

Combined heat and power generation with a HCPV system at 2000 suns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paredes, Filippo; Montagnino, Fabio M.; Milone, Sergio

2015-09-28

This work shows the development of an innovative solar CHP system for the combined production of heat and power based upon HCPV modules working at the high concentration level of 2000 suns. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror while a secondary optic at the focus of the parabolic mirror is glued in optical contact with the cell. Each module consist of 2 axis tracker (Alt-Alt type) with 20 multijunction cells each one integrated with an active heat sink. The cell is connectedmore » to an active heat transfer system that allows to keep the cell at a high level of electrical efficiency (ηel > 30 %), bringing the heat transfer fluid (water and glycol) up to an output temperature of 90°C. Accordingly with the experimental data collected from the first 1 kWe prototype, the total amount of extracted thermal energy is above the 50% of the harvested solar radiation. That, in addition the electrical efficiency of the system contributes to reach an overall CHP efficiency of more than the 80%.« less

Combined heat and power generation with a HCPV system at 2000 suns

NASA Astrophysics Data System (ADS)

Paredes, Filippo; Montagnino, Fabio M.; Salinari, Piero; Bonsignore, Gaetano; Milone, Sergio; Agnello, Simonpietro; Barbera, Marco; Gelardi, Franco M.; Sciortino, Luisa; Collura, Alfonso; Lo Cicero, Ugo; Cannas, Marco

2015-09-01

This work shows the development of an innovative solar CHP system for the combined production of heat and power based upon HCPV modules working at the high concentration level of 2000 suns. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror while a secondary optic at the focus of the parabolic mirror is glued in optical contact with the cell. Each module consist of 2 axis tracker (Alt-Alt type) with 20 multijunction cells each one integrated with an active heat sink. The cell is connected to an active heat transfer system that allows to keep the cell at a high level of electrical efficiency (ηel > 30 %), bringing the heat transfer fluid (water and glycol) up to an output temperature of 90°C. Accordingly with the experimental data collected from the first 1 kWe prototype, the total amount of extracted thermal energy is above the 50% of the harvested solar radiation. That, in addition the electrical efficiency of the system contributes to reach an overall CHP efficiency of more than the 80%.

Life and death of the resurrection plate: Evidence for its existence and subduction in the northeastern Pacific in Paleocene-Eocene time

USGS Publications Warehouse

Haeussler, P.J.; Bradley, D.C.; Wells, R.E.; Miller, M.L.

2003-01-01

Onshore evidence suggests that a plate is missing from published reconstructions of the northeastern Pacific Ooean in Paleocene- Eocene time. The Resurrection plate, named for the Resurrection Peninsula ophiolite near Seward, Alaska, was located east of the Kula plate and north of the Farallon plate. We interpret coeval near-trench magmatism in southern Alaska and the Cascadia margin as evidence for two slab windows associated with trench-ridge-trench (TRT) triple junctions, which formed the western and southern boundaries of the Resurrection plate. In Alaska, the Sanak-Baranof belt of near-trench intrusions records a west-to-east migration, from 61 to 50 Ma, of the northern TRT triple junction along a 2100-km-long section of coastline. In Oregon, Washington, and southern Vancouver Island, voluminous basaltic volcanism of the Siletz River Volcanics, Crescent Formation, and Metchosin Volcanics occurred between ca. 66 and 48 Ma. Lack of a clear age progression of magmatism along the Cascadia margin suggests that this southern triple junction did not migrate significantly. Synchronous near-trench magmatism from southeastern Alaska to Puget Sound at ca. 50 Ma documents the middle Eocene subduction of a spreading center, the crest of which was subparallel to the margin. We interpret this ca. 50 Ma event as recording the subduction-zone consumption of the last of the Resurrection plate. The existence and subsequent subduction of the Resurrection plate explains (1) northward terrane transport along the southeastern Alaska-British Columbia margin between 70 and 50 Ma, synchronous with an eastward-migrating triple junction in southern Alaska; (2) rapid uplift and voluminous magmatism in the Coast Mountains of British Columbia prior to 50 Ma related to subduction of buoyant, young oceanic crust of the Resurrection plate; (3) cessation of Coast Mountains magmatism at ca. 50 Ma due to cessation of subduction, (4) primitive mafic magmatism in the Coast Mountains and Cascade Range just after 50 Ma, related to slab-window magmatism, (5) birth of the Queen Charlotte transform margin at ca. 50 Ma, (6) extensional exhumation of high-grade metamorphic terranes and development of core complexes in British Columbia, Idaho, and Washington, and extensional collapse of the Cordilleran foreland fold-and-thrust belt in Alberta, Montana, and Idaho after 50 Ma related to initiation of the transform margin, (7) enigmatic 53-45 Ma magmatism associated with extension from Montana to the Yukon Territory as related to slab breakup and the formation of a slab window, (8) right-lateral margin-parallel strike-slip faulting in southern and western Alaska during Late Cretaceous and Paleocene time, which cannot be explained by Farallon convergence vectors, and (9) simultaneous changes in Pacific-Farallon and Pacific-Kula plate motions concurrent with demise of the Kula-Resurrection Ridge.

Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, William, E-mail: william.hsu@utexas.edu; Kim, Taegon; Chou, Harry

2016-07-07

Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B{sup +} implantation, the use of the heavier BF{sub 2}{sup +} ions or even BF{sup +} is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B{sup +}, BF{sup +}, and BF{sub 2}{sup +} implants in crystalline and pre-amorphized Ge, employing rapid thermal annealingmore » at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF{sup +}, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p{sup +}/n junctions formed by BF{sup +} implantation was evaluated.« less

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

PubMed

Venkatesan, Swaminathan; Ngo, Evan C; Chen, Qiliang; Dubey, Ashish; Mohammad, Lal; Adhikari, Nirmal; Mitul, Abu Farzan; Qiao, Qiquan

2014-06-21

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy.

PubMed

Mimila-Arroyo, J

2017-06-01

In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

NASA Astrophysics Data System (ADS)

Mimila-Arroyo, J.

2017-06-01

In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

NASA Astrophysics Data System (ADS)

Halliop, Basia

Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of ITO and to change the properties of the underlying a-Si:H film. Finally, an open circuit voltage of 699 mV was achieved using DCSF PECVD in the tetrode configuration to fabricate a metal/ITO/p-a-Si:H/ i-a-Si:H/n-c-Si/i-a-Si:H/ n+-a-Si:H/metal photovoltaic cell on a texturized wafer. The 4 cm2 cell had an efficiency of 16.5%, a short circuit current of 36.4 mA/cm2 and a fill factor of 64.7%.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

High-throughput deterministic single-cell encapsulation and droplet pairing, fusion, and shrinkage in a single microfluidic device.

PubMed

Schoeman, Rogier M; Kemna, Evelien W M; Wolbers, Floor; van den Berg, Albert

2014-02-01

In this article, we present a microfluidic device capable of successive high-yield single-cell encapsulation in droplets, with additional droplet pairing, fusion, and shrinkage. Deterministic single-cell encapsulation is realized using Dean-coupled inertial ordering of cells in a Yin-Yang-shaped curved microchannel using a double T-junction, with a frequency over 2000 Hz, followed by controlled droplet pairing with a 100% success rate. Subsequently, droplet fusion is realized using electrical actuation resulting in electro-coalescence of two droplets, each containing a single HL60 cell, with 95% efficiency. Finally, volume reduction of the fused droplet up to 75% is achieved by a triple pitchfork structure. This droplet volume reduction is necessary to obtain close cell-cell membrane contact necessary for final cell electrofusion, leading to hybridoma formation, which is the ultimate aim of this research. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Power system design of ESMO

NASA Astrophysics Data System (ADS)

Ulrich, Steve; Veilleux, Jean-François; Landry Corbin, François

2009-01-01

The European Student Moon Orbiter (ESMO) spacecraft is a student-built mini satellite being designed for a mission to the Moon. Designing and launching mini satellites are becoming a current trend in the space sector since they provide an economic way to perform innovative scientific experiments and in-flight demonstration of novel space technologies. The generation, storage, control, and distribution of the electrical power in a mini satellite represents unique challenges to the power engineer since the mass and volume restrictions are very stringent. Regardless of these problems, every subsystem and payload equipment must be operated within their specified voltage band whenever they required to be turned on. This paper presents the preliminary design of a lightweight, compact, and reliable power system for ESMO that can generate 720 W. Some of the key components of the EPS include ultra triple-junction (UTJ) GaAs solar cells controlled by maximum power point trackers, and high efficiency Li-ion secondary batteries recharged in parallel.

Lightweight Solar Paddle with High Specific Power of 150 W/Kg

NASA Astrophysics Data System (ADS)

Shimazaki, Kazunori; Takahashi, Masato; Imaizumi, Mitsuru; Takamoto, Tatsuya; Ito, Takehiko; Nozaki, Yukishige; Kusawake, Hiroaki

2014-08-01

A lightweight solar paddle using space solar sheet (SSS) is currently being developed, which uses glass-type SSS (G-SSS) comprising InGaP/GaAs/InGaAs triple- junction high-efficiency thin-film solar cells. To avoid damage to the G-SSS due to vibration during launch, we adopted a new architecture on a panel. This panel employed a curved frame-type structure, on which the G-SSS is mounted and test models were manufactured to evaluate the vibration tolerance. The dimensions of the 1.0-cm-thick unit panel were about 1.0 × 1.0 m. Acoustic and sine vibration tests were performed on the model and the results demonstrated the high durability of the curved panel in an acoustic and vibration environments. The specific power of the solar paddle using the curved panel is estimated at approximately 150 W/kg at an array power of about 10 kW.

A loop 2 cytidine-stem 1 minor groove interaction as a positive determinant for pseudoknot-stimulated -1 ribosomal frameshifting.

PubMed

Cornish, Peter V; Hennig, Mirko; Giedroc, David P

2005-09-06

The molecular determinants of stimulation of -1 programmed ribosomal frameshifting (-1 PRF) by RNA pseudoknots are poorly understood. Sugarcane yellow leaf virus (ScYLV) encodes a 28-nt mRNA pseudoknot that promotes -1 PRF between the P1 (protease) and P2 (polymerase) genes in plant luteoviruses. The solution structure of the ScYLV pseudoknot reveals a well ordered loop 2 (L2) that exhibits continuous stacking of A20 through C27 in the minor groove of the upper stem 1 (S1), with C25 flipped out of the triple-stranded stack. Five consecutive triple base pairs flank the helical junction where the 3' nucleotide of L2, C27, adopts a cytidine 27 N3-cytidine 14 2'-OH hydrogen bonding interaction with the C14-G7 base pair. This interaction is isosteric with the adenosine N1-2'-OH interaction in the related mRNA from beet western yellows virus (BWYV); however, the ScYLV and BWYV mRNA structures differ in their detailed L2-S1 hydrogen bonding and L2 stacking interactions. Functional analyses of ScYLV/BWYV chimeric pseudoknots reveal that the ScYLV RNA stimulates a higher level of -1 PRF (15 +/- 2%) relative to the BWYV pseudoknot (6 +/- 1%), a difference traced largely to the identity of the 3' nucleotide of L2 (C27 vs. A25 in BWYV). Strikingly, C27A ScYLV RNA is a poor frameshift stimulator (2.0%) and is destabilized by approximately 1.5 kcal x mol(-1) (pH 7.0, 37 degrees C) with respect to the wild-type pseudoknot. These studies establish that the precise network of weak interactions nearest the helical junction in structurally similar pseudoknots make an important contribution to setting the frameshift efficiency in mRNAs.

A loop 2 cytidine-stem 1 minor groove interaction as a positive determinant for pseudoknot-stimulated –1 ribosomal frameshifting

PubMed Central

Cornish, Peter V.; Hennig, Mirko; Giedroc, David P.

2005-01-01

The molecular determinants of stimulation of –1 programmed ribosomal frameshifting (–1 PRF) by RNA pseudoknots are poorly understood. Sugarcane yellow leaf virus (ScYLV) encodes a 28-nt mRNA pseudoknot that promotes –1 PRF between the P1 (protease) and P2 (polymerase) genes in plant luteoviruses. The solution structure of the ScYLV pseudoknot reveals a well ordered loop 2 (L2) that exhibits continuous stacking of A20 through C27 in the minor groove of the upper stem 1 (S1), with C25 flipped out of the triple-stranded stack. Five consecutive triple base pairs flank the helical junction where the 3′ nucleotide of L2, C27, adopts a cytidine 27 N3-cytidine 14 2′-OH hydrogen bonding interaction with the C14-G7 base pair. This interaction is isosteric with the adenosine N1–2′-OH interaction in the related mRNA from beet western yellows virus (BWYV); however, the ScYLV and BWYV mRNA structures differ in their detailed L2–S1 hydrogen bonding and L2 stacking interactions. Functional analyses of ScYLV/BWYV chimeric pseudoknots reveal that the ScYLV RNA stimulates a higher level of –1 PRF (15 ± 2%) relative to the BWYV pseudoknot (6 ± 1%), a difference traced largely to the identity of the 3′ nucleotide of L2 (C27 vs. A25 in BWYV). Strikingly, C27A ScYLV RNA is a poor frameshift stimulator (2.0%) and is destabilized by ≈1.5 kcal·mol–1 (pH 7.0, 37°C) with respect to the wild-type pseudoknot. These studies establish that the precise network of weak interactions nearest the helical junction in structurally similar pseudoknots make an important contribution to setting the frameshift efficiency in mRNAs. PMID:16123125

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Three-dimensional photonic crystals as intermediate filter for thin-film tandem solar cells

NASA Astrophysics Data System (ADS)

Bielawny, Andreas; Miclea, Paul T.; Wehrspohn, Ralf B.; Lee, Seung-Mo; Knez, Mato; Rockstuhl, Carsten; Lisca, Marian; Lederer, Falk L.; Carius, Reinhard

2008-04-01

The concept of a 3D photonic crystal structure as diffractive and spectrally selective intermediate filter within 'micromorphous' (a-Si/μc-Si) tandem solar cells has been investigated numerically and experimentally. Our device aims for the enhancement of the optical pathway of incident light within the amorphous silicon top cell in its spectral region of low absorption. From our previous simulations, we expect a significant improvement of the tandem cell efficiency of about absolutely 1.3%. This increases the efficiency for a typical a-Si / μc-Si tandem cell from 11.1% to 12.4%, as a result of the optical current-matching of the two junctions. We suggest as wavelength-selective optical element a 3D-structured optical thin-film, prepared by self-organized artificial opal templates and replicated with atomic layer deposition. The resulting samples are highly periodic thin-film inverted opals made of conducting and transparent zinc-oxide. We describe the fabrication processes and compare experimental data on the optical properties in reflection and transmission with our simulations and photonic band structure calculations.

Liquid junction schottky barrier solar cell

DOEpatents

Williams, Richard

1980-01-01

A mixture of ceric ions (Ce.sup.+4) and cerous ions (Ce.sup.+3) in an aqueous electrolyte solution forms a Schottky barrier at the interface between an active region of silicon and the electrolyte solution. The barrier height obtained for hydrogenated amorphous silicon using the Ce.sup.+4 /Ce.sup.+3 redox couple is about 1.7 eV.

Highly efficient and recyclable triple-shelled Ag@Fe3O4@SiO2@TiO2 photocatalysts for degradation of organic pollutants and reduction of hexavalent chromium ions

NASA Astrophysics Data System (ADS)

Su, Jianwei; Zhang, Yunxia; Xu, Sichao; Wang, Shuan; Ding, Hualin; Pan, Shusheng; Wang, Guozhong; Li, Guanghai; Zhao, Huijun

2014-04-01

Herein, we demonstrate the design and fabrication of the well-defined triple-shelled Ag@Fe3O4@SiO2@TiO2 nanospheres with burr-shaped hierarchical structures, in which the multiple distinct functional components are integrated wonderfully into a single nanostructure. In comparison with commercial TiO2 (P25), pure TiO2 microspheres, Fe3O4@SiO2@TiO2 and annealed Ag@Fe3O4@SiO2@TiO2 nanocomposites, the as-obtained amorphous triple-shelled Ag@Fe3O4@SiO2@TiO2 hierarchical nanospheres exhibit a markedly enhanced visible light or sunlight photocatalytic activity towards the photodegradation of methylene blue and photoreduction of hexavalent chromium ions in wastewater. The outstanding photocatalytic activities of the plasmonic photocatalyst are mainly due to the enhanced light harvesting, reduced transport paths for both mass and charge transport, reduced recombination probability of photogenerated electrons/holes, near field electromagnetic enhancement and efficient scattering from the plasmonic nanostructure, increased surface-to-volume ratio and active sites in three dimensional (3D) hierarchical porous nanostructures, and improved photo/chemical stability. More importantly, the hierarchical nanostructured Ag@Fe3O4@SiO2@TiO2 photocatalysts could be easily collected and separated by applying an external magnetic field and reused at least five times without any appreciable reduction in photocatalytic efficiency. The enhanced photocatalytic activity and excellent chemical stability, in combination with the magnetic recyclability, make these multifunctional nanostructures promising candidates to remediate aquatic contaminants and meet the demands of future environmental issues.Herein, we demonstrate the design and fabrication of the well-defined triple-shelled Ag@Fe3O4@SiO2@TiO2 nanospheres with burr-shaped hierarchical structures, in which the multiple distinct functional components are integrated wonderfully into a single nanostructure. In comparison with commercial TiO2 (P25), pure TiO2 microspheres, Fe3O4@SiO2@TiO2 and annealed Ag@Fe3O4@SiO2@TiO2 nanocomposites, the as-obtained amorphous triple-shelled Ag@Fe3O4@SiO2@TiO2 hierarchical nanospheres exhibit a markedly enhanced visible light or sunlight photocatalytic activity towards the photodegradation of methylene blue and photoreduction of hexavalent chromium ions in wastewater. The outstanding photocatalytic activities of the plasmonic photocatalyst are mainly due to the enhanced light harvesting, reduced transport paths for both mass and charge transport, reduced recombination probability of photogenerated electrons/holes, near field electromagnetic enhancement and efficient scattering from the plasmonic nanostructure, increased surface-to-volume ratio and active sites in three dimensional (3D) hierarchical porous nanostructures, and improved photo/chemical stability. More importantly, the hierarchical nanostructured Ag@Fe3O4@SiO2@TiO2 photocatalysts could be easily collected and separated by applying an external magnetic field and reused at least five times without any appreciable reduction in photocatalytic efficiency. The enhanced photocatalytic activity and excellent chemical stability, in combination with the magnetic recyclability, make these multifunctional nanostructures promising candidates to remediate aquatic contaminants and meet the demands of future environmental issues. Electronic supplementary information (ESI) available: Synthesis of TiO2 microspheres; synthesis of Fe3O4@SiO2@TiO2 nanospheres; synthesis of Ag@Fe3O4@TiO2 nanospheres; SEM images of the as-prepared products: (a) Ag@Fe3O4, (b) Ag@Fe3O4@SiO2 and (c) Ag@Fe3O4@SiO2@TiO2 (Fig. S1); TEM images of the Ag@Fe3O4@SiO2 synthesized with adding different amount of TEOS (Fig. S2); SEM, TEM and EDS spectrum of Fe3O4@SiO2@TiO2 NPs (Fig. S3); SEM and TEM images of as-prepared TiO2 microspheres (Fig. S4); nitrogen adsorption-desorption isotherm and pore size distribution plot for as-prepared Fe3O4@SiO2@TiO2 and TiO2 microspheres (Fig. S5); adsorption rate curve of MB in dark for Ag@Fe3O4@SiO2@TiO2 samples (Fig. S6); photocatalytic degradation of MB over unannealed Ag@Fe3O4@SiO2@TiO2 (3 mg) and P25 (10 mg) under Xe lamp illumination (Fig. S7). See DOI: 10.1039/c4nr00534a

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Photovoltaic and photoelectrochemical conversion of solar energy.

PubMed

Grätzel, Michael

2007-04-15

The Sun provides approximately 100,000 terawatts to the Earth which is about 10000 times more than the present rate of the world's present energy consumption. Photovoltaic cells are being increasingly used to tap into this huge resource and will play a key role in future sustainable energy systems. So far, solid-state junction devices, usually made of silicon, crystalline or amorphous, and profiting from the experience and material availability resulting from the semiconductor industry, have dominated photovoltaic solar energy converters. These systems have by now attained a mature state serving a rapidly growing market, expected to rise to 300 GW by 2030. However, the cost of photovoltaic electricity production is still too high to be competitive with nuclear or fossil energy. Thin film photovoltaic cells made of CuInSe or CdTe are being increasingly employed along with amorphous silicon. The recently discovered cells based on mesoscopic inorganic or organic semiconductors commonly referred to as 'bulk' junctions due to their three-dimensional structure are very attractive alternatives which offer the prospect of very low cost fabrication. The prototype of this family of devices is the dye-sensitized solar cell (DSC), which accomplishes the optical absorption and the charge separation processes by the association of a sensitizer as light-absorbing material with a wide band gap semiconductor of mesoporous or nanocrystalline morphology. Research is booming also in the area of third generation photovoltaic cells where multi-junction devices and a recent breakthrough concerning multiple carrier generation in quantum dot absorbers offer promising perspectives.

IEEE Photovoltaic Specialists Conference, 20th, Las Vegas, NV, Sept. 26-30, 1988, Conference Record. Volumes 1 & 2

NASA Astrophysics Data System (ADS)

Various papers on photovoltaics are presented. The general topics considered include: amorphous materials and cells; amorphous silicon-based solar cells and modules; amorphous silicon-based materials and processes; amorphous materials characterization; amorphous silicon; high-efficiency single crystal solar cells; multijunction and heterojunction cells; high-efficiency III-V cells; modeling and characterization of high-efficiency cells; LIPS flight experience; space mission requirements and technology; advanced space solar cell technology; space environmental effects and modeling; space solar cell and array technology; terrestrial systems and array technology; terrestrial utility and stand-alone applications and testing; terrestrial concentrator and storage technology; terrestrial stand-alone systems applications; terrestrial systems test and evaluation; terrestrial flatplate and concentrator technology; use of polycrystalline materials; polycrystalline II-VI compound solar cells; analysis of and fabrication procedures for compound solar cells.

An Earth-Abundant Catalyst-Based Seawater Photoelectrolysis System with 17.9% Solar-to-Hydrogen Efficiency.

PubMed

Hsu, Shao-Hui; Miao, Jianwei; Zhang, Liping; Gao, Jiajian; Wang, Hongming; Tao, Huabing; Hung, Sung-Fu; Vasileff, Anthony; Qiao, Shi Zhang; Liu, Bin

2018-05-01

The implementation of water splitting systems, powered by sustainable energy resources, appears to be an attractive strategy for producing high-purity H 2 in the absence of the release of carbon dioxide (CO 2 ). However, the high cost, impractical operating conditions, and unsatisfactory efficiency and stability of conventional methods restrain their large-scale development. Seawater covers 70% of the Earth's surface and is one of the most abundant natural resources on the planet. New research is looking into the possibility of using seawater to produce hydrogen through electrolysis and will provide remarkable insight into sustainable H 2 production, if successful. Here, guided by density functional theory (DFT) calculations to predict the selectivity of gas-evolving catalysts, a seawater-splitting device equipped with affordable state-of-the-art electrocatalysts composed of earth-abundant elements (Fe, Co, Ni, and Mo) is demonstrated. This device shows excellent durability and specific selectivity toward the oxygen evolution reaction in seawater with near 100% Faradaic efficiency for the production of H 2 and O 2 . Powered by a single commercial III-V triple-junction photovoltaic cell, the integrated system achieves spontaneous and efficient generation of high-purity H 2 and O 2 from seawater at neutral pH with a remarkable 17.9% solar-to-hydrogen efficiency. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

PubMed

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Silicon and Civilization,

DTIC Science & Technology

1980-11-04

less form, or so-called amorphous, as strata of diatomaceous earth , or also in the form of the precious stone--opal. As mentioned, silicon dioxide...skeletons and those of water creatures, which after mortification fall to the bottom of the waters creating strata of diatomaceous earth are also built of...reactions. Likewise, diatomaceous earth has a well developed surface and great adsorptive capa- bility, among others it can absorb a triple excess of

Alternate-strand triple-helix formation by the 3'-3'-linked oligodeoxynucleotides with the intercalators at the junction point.

PubMed

Ueno, Y; Mikawa, M; Hoshika, S; Takeba, M; Kitade, Y; Matsuda, A

2001-01-01

3'-3'-Linked oligodeoxynucleotides (ODNs) with the anthraquinonyl group at the junction point were synthesized on a DNA synthesizer using a controlled pore glass (CPG), which has pentaerythritol carrying the intercalator at one of the four hydroxymethyl groups. Stability of the triplexes with the target duplexes was studied by thermal denaturation. The 3'-3'-linked ODNs with the anthraquinonyl group enhanced the thermal stability of the triplexes when compared with those without the intercalator and the unmodified nonamer. The inhibitory activity of the 3'-3'-linked ODNs against the cleavage of the target DNA by the restriction enzyme Hind III was tested. It was found that the 3'-3'-linked ODN with the anthraquinonyl group at the junction point inhibited the cleavage by the enzyme more effectively than the nonamer and the 3'-3'-linked ODN without the intercalator.

The chemical deposition of semiconductor thin-films for photovoltaic devices

NASA Astrophysics Data System (ADS)

Breen, Marc Louis

Initially, possible precursors to metal sulfide films formed by metal-organic chemical vapor deposition (MOCVD), the standard commercial technique for manufacturing photovoltaic semiconductors, were synthesized. Triple-junction GaInP 2/GaAs/Ge solar cells, prepared by this method, were studied to understand how chemical properties and material defects can effect the performance of photovoltaic devices. Finally, novel methods for the low-temperature, solution growth of CdS, CdSe, and CuInSe2 photovoltaic materials were targeted which will reduce manufacturing costs and increase the economic feasibility of solar energy conversion. A series of dialkyldithiocarbamate copper, gallium and indium compounds were studied as possible metal sulfide MOCVD precursors. Metal powders were oxidized by dialkylthiurams in 3- or 4-methylpyridine using standard techniques for handling air and moisture-sensitive compounds. Metal chlorides reacted directly with the sodium dialkyldithiocarbamate salts. In these complexes, the metal was found in a roughly octahedral orientation, surrounded by dithiocarbamate ligands and/or solvent molecules. Triple-junction GaInP2/GaAs/Ge cells were composed of thin-films of GaInP2 and GaAs grown monolithically on top of a germanium substrate. Each layer of semiconductor material had a different bandgap and absorbed a different portion of the solar spectrum, thus improving the overall efficiency of the cell. Work focused on dark current-voltage behavior which is known to limit solar cell open-circuit voltage, fill factor, and conversion efficiency. Cells were studied using microscopic and spectroscopic techniques to correlate the effect of physical defects in the materials with poor performance of the devices as evaluated through current vs. voltage measurements. Films of US and CdSe were readily prepared in solution through an "ion-by-ion" deposition of Cd2+ and S2- (or Se 2-) generated from the slow hydrolysis of thiourea (or dimethylthiourea). The bath chemistry was carefully controlled by the adjustment of pH to slow hydrolysis and with chelating agents to sequester the cadmium ions. Triethanolamine and ethylenediamine were both effective chelators with the latter producing thicker, clearer films. Finally, US films were grown over electrodeposited CuInSe2 to form working photovoltaic devices. In summary, contributions were made which (a) advance current methods for manufacturing photovoltaic semiconductors and (b) offer an alternative route to producing new forms of thin-film solar cell devices.

Bottom-up Fabrication of Multilayer Stacks of 3D Photonic Crystals from Titanium Dioxide.

PubMed

Kubrin, Roman; Pasquarelli, Robert M; Waleczek, Martin; Lee, Hooi Sing; Zierold, Robert; do Rosário, Jefferson J; Dyachenko, Pavel N; Montero Moreno, Josep M; Petrov, Alexander Yu; Janssen, Rolf; Eich, Manfred; Nielsch, Kornelius; Schneider, Gerold A

2016-04-27

A strategy for stacking multiple ceramic 3D photonic crystals is developed. Periodically structured porous films are produced by vertical convective self-assembly of polystyrene (PS) microspheres. After infiltration of the opaline templates by atomic layer deposition (ALD) of titania and thermal decomposition of the polystyrene matrix, a ceramic 3D photonic crystal is formed. Further layers with different sizes of pores are deposited subsequently by repetition of the process. The influence of process parameters on morphology and photonic properties of double and triple stacks is systematically studied. Prolonged contact of amorphous titania films with warm water during self-assembly of the successive templates is found to result in exaggerated roughness of the surfaces re-exposed to ALD. Random scattering on rough internal surfaces disrupts ballistic transport of incident photons into deeper layers of the multistacks. Substantially smoother interfaces are obtained by calcination of the structure after each infiltration, which converts amorphous titania into the crystalline anatase before resuming the ALD infiltration. High quality triple stacks consisting of anatase inverse opals with different pore sizes are demonstrated for the first time. The elaborated fabrication method shows promise for various applications demanding broadband dielectric reflectors or titania photonic crystals with a long mean free path of photons.

Structural stability and energetics of grain boundary triple junctions in face centered cubic materials

NASA Astrophysics Data System (ADS)

Adlakha, I.; Solanki, K. N.

2015-03-01

We present a systematic study to elucidate the role of triple junctions (TJs) and their constituent grain boundaries on the structural stability of nanocrystalline materials. Using atomistic simulations along with the nudge elastic band calculations, we explored the atomic structural and thermodynamic properties of TJs in three different fcc materials. We found that the magnitude of excess energy at a TJ was directly related to the atomic density of the metal. Further, the vacancy binding and migration energetics in the vicinity of the TJ were examined as they play a crucial role in the structural stability of NC materials. The resolved line tension which takes into account the stress buildup at the TJ was found to be a good measure in predicting the vacancy binding tendency near the TJ. The activation energy for vacancy migration along the TJ was directly correlated with the measured excess energy. Finally, we show that the resistance for vacancy diffusion increased for TJs with larger excess stored energy and the defect mobility at some TJs is slower than their constituent GBs. Hence, our results have general implications on the diffusional process in NC materials and provide new insight into stabilizing NC materials with tailored TJs.

Model for threading dislocations in metamorphic tandem solar cells on GaAs (001) substrates

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-02-01

We present an approximate model for the threading dislocations in III-V heterostructures and have applied this model to study the defect behavior in metamorphic triple-junction solar cells. This model represents a new approach in which the coefficient for second-order threading dislocation annihilation and coalescence reactions is considered to be determined by the length of misfit dislocations, LMD, in the structure, and we therefore refer to it as the LMD model. On the basis of this model we have compared the average threading dislocation densities in the active layers of triple junction solar cells using linearly-graded buffers of varying thicknesses as well as S-graded (complementary error function) buffers with varying thicknesses and standard deviation parameters. We have shown that the threading dislocation densities in the active regions of metamorphic tandem solar cells depend not only on the thicknesses of the buffer layers but on their compositional grading profiles. The use of S-graded buffer layers instead of linear buffers resulted in lower threading dislocation densities. Moreover, the threading dislocation densities depended strongly on the standard deviation parameters used in the S-graded buffers, with smaller values providing lower threading dislocation densities.

Progress towards a 30% efficient GaInP/Si tandem solar cells

DOE PAGES

Essig, Stephanie; Ward, Scott; Steiner, Myles A.; ...

2015-08-28

The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved bymore » using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Triple-wavelength, narrowband Mg/SiC multilayers with corrosion barriers and high peak reflectance in the 25-80 nm wavelength region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernández-Perea, Mónica; Soufli, Regina; Robinson, Jeff C.

2012-01-01

We have developed new, corrosion-resistant Mg/SiC multilayer coatings which can be used to efficiently and simultaneously reflect extreme ultraviolet (EUV) radiation in single or multiple narrow bands centered at wavelengths in the spectral region from 25 to 80 nm. Corrosion mitigation is achieved through the use of partially amorphous Al-Mg thin layers. Three different multilayer design concepts were developed and deposited by magnetron sputtering and the reflectance was measured at near-normal incidence in a broad spectral range. Unprotected Mg/SiC multilayers were also deposited and measured for comparison. They were shown to efficiently reflect radiation at a wavelength of 76.9 nmmore » with a peak reflectance of 40.6% at near-normal incidence, the highest experimental reflectance reported at this wavelength for a narrowband coating. The demonstration of multilayer coatings with corrosion resistance and multiplewavelength EUV performance is of great interest in the development of mirrors for space-borne solar physics telescopes and other applications requiring long-lasting coatings with narrowband response in multiple emission lines across the EUV range.« less

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

NASA Technical Reports Server (NTRS)

Heinbockel, John H.; Walker, Gilbert H.

1988-01-01

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, S. A.; Lee, H. J.; Oh, Y. J., E-mail: yjoh@hanbat.ac.kr

We analyzed the effect of crystallographic anisotropy on the morphological evolution of a 12-nm-thick gold film during solid-state dewetting at high temperatures using automated indexing tool in a transmission electron microscopy. Dewetting initiated at grain-boundary triple junctions adjacent to large grains resulting from abnormal grain growth driven by (111) texture development. Voids at the junctions developed shapes with faceted edges bounded by low-index crystal planes. The kinetic mobility of the edges varied with the crystal orientation normal to the edges, with a predominance of specific edges with the slowest retraction rates as the annealing time was increased.

Plume-induced continental break-up from Red Sea to Lake Malawi: 3D numerical models of the East African Rift System

NASA Astrophysics Data System (ADS)

Koptev, Alexander; Burov, Evgueni; Calais, Eric; Leroy, Sylvie; Gerya, Taras; Cloetingh, Sierd; Guillou-Frottier, Laurent

2017-04-01

We use numerical thermo-mechanical experiments in order to analyze the role of active mantle plume, far-field tectonic stresses and pre-existing lithospheric heterogeneities in structural development of the East African Rift system (EARS). It is commonly assumed that the Cenozoic rifts have avoided the cratons and follow the mobile belts which serve as the weakest pathways within the non-uniform material structured during pre-rift stages. Structural control of the pre-existing heterogeneities within the Proterozoic belts at the scale of individual faults or rifts has been demonstrated as well. However, the results of our numerical experiments show that the formation of two rift zones on opposite sides of a thick lithosphere segment can be explained without appealing to pre-imposed heterogeneities at the crustal level. These models have provided a unified physical framework to understand the development of the Eastern branch, the Western branch and its southern prolongation by the Malawi rift around thicker lithosphere of the Tanzanian and Bangweulu cratons as a result of the interaction between pre-stressed continental lithosphere and single mantle plume anomaly corresponding to the Kenyan plume. The second series of experiments has been designed in order to investigate northern segment of the EARS where Afro-Arabian plate separation is supposed to be related with the impact of Afar mantle plume. We demonstrate that whereas relatively simple linear rift structures are preferred in case of uni-directional extension, more complex rifting patterns combining one or several ridge-ridge-ridge triple junctions can form in response to bi-directional extensional far-field stresses. In particular, our models suggest that Afar triple junction represents an end-member mode of plume-induced bi-directional rifting combining asymmetrical northward traction and symmetrical EW extension of similar magnitudes. The presence of pre-existing linear weak zones appears to be not mandatory for deformation localization ultimately leading to present configuration of the Afar triple junction. Finally, for laterally extended experiments we have used parameters of the best-fit models for the southern and northern segments of the EARS in order to define the position of Kenyan plume and the velocity boundary conditions. These models cover all rifting and spreading structures associated with both Afar and Kenyan plumes: Red Sea Rift and the Aden Ridge to the north of the Afar Triple Junction; Main Ethiopian Rift running to the south that continues as the Kenyan Rift; Western Rift and its southern prolongation corresponding to Malawi rift. We argue that all these basic features associated with Cenozoic rifting in the EARS can be reproduced in a relatively simple context of the interaction between two mantle anomalies corresponding to Afar and Kenyan plumes and pre-stressed rheologically stratified continental lithosphere containing only first-order structural heterogeneities (such as Tanzanian and Bangweulu cratons).

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Snyder, David

2005-01-01

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Tuning Chemical Potential Difference across Alternately Doped Graphene p-n Junctions for High-Efficiency Photodetection.

PubMed

Lin, Li; Xu, Xiang; Yin, Jianbo; Sun, Jingyu; Tan, Zhenjun; Koh, Ai Leen; Wang, Huan; Peng, Hailin; Chen, Yulin; Liu, Zhongfan

2016-07-13

Being atomically thin, graphene-based p-n junctions hold great promise for applications in ultrasmall high-efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p-n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p-n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p-n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p-n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.

Magmatic tectonic effects of high thermal regime at the site of active ridge subduction: the Chile Triple Junction model

NASA Astrophysics Data System (ADS)

Lagabrielle, Yves; Guivel, Christèle; Maury, René C.; Bourgois, Jacques; Fourcade, Serge; Martin, Hervé

2000-11-01

High thermal gradients are expected to be found at sites of subduction of very young oceanic lithosphere and more particularly at ridge-trench-trench (RTT) triple junctions, where active oceanic spreading ridges enter a subduction zone. Active tectonics, associated with the emplacement of two main types of volcanic products, (1) MORB-type magmas, and (2) calc-alkaline acidic magmas in the forearc, also characterize these plate junction domains. In this context, MORB-type magmas are generally thought to derive from the buried active spreading center subducted at shallow depths, whereas the origin of calc-alkaline acidic magmas is more problematic. One of the best constrained examples of ridge-trench interaction is the Chile Triple Junction (CTJ) located southwest of the South American plate at 46°12'S, where the active Chile spreading center enters the subduction zone. In this area, there is a clear correlation between the emplacement of magmatic products and the migration of the triple junction along the active margin. The CTJ lava population is bimodal, with mafic to intermediate lavas (48-56% SiO 2) and acidic lavas ranging from dacites to rhyolites (66-73% SiO 2). Previous models have shown that partial melting of oceanic crust plus 10-20% of sediments, leaving an amphibole- and plagioclase-rich residue, is the only process that may account for the genesis of acidic magmas. Due to special plate geometry in the CTJ area, a given section of the margin may be successively affected by the passage of several ridge segments. We emphasize that repeated passages will lead to the development of very high thermal gradients allowing melting of rocks of oceanic origin at temperatures of 800-900°C and low pressures, corresponding to depths of 10-20 km depth only. In addition, the structure of the CTJ forearc domain is dominated by horizontal displacements and tilting of crustal blocks along a network of strike-slip faults. The occurrence of such a deformed domain implies that an important tectonic coupling may exist between the upper and the lower plates leading to the partitioning of the continental lithosphere and to the tectonic underplating of very young oceanic lithosphere below the continental wedge. We assume that in the case of the CTJ, the uncommon situation of three successive ridge segments entering the trench at 2-3 Ma intervals only resulted in a strong and finally long-lived thermal anomaly. This anomaly caused remelting of underplated portions of very young, still hot oceanic lithosphere. Only particular geometrical RTT configurations are able to produce such features. These include linear continental margin, short ridge segments slightly oblique to the trench and short transform faults. Finally, the CTJ example shows that a possible scenario for the origin of calc-alkaline acidic rocks in the near-trench region involves coeval tectonic coupling and repeated passage of thermal anomalies due to successive subduction of short ridge segments. Therefore, the local abundance of calc-alkaline acidic rocks, associated with MORB-type lavas in ancient series, could be the tracer of plate tectonic configurations involving the subduction of short ridge segments in a relatively short duration.

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Hybrid Composite Coatings for Durable and Efficient Solar Hydrogen Generation under Diverse Operating Conditions

DOE PAGES

Walczak, Karl A.; Segev, Gideon; Larson, David M.; ...

2017-02-17

Safe and practical solar-driven hydrogen generators must be capable of efficient and stable operation under diurnal cycling with full separation of gaseous H 2 and O 2 products. In this paper, a novel architecture that fulfills all of these requirements is presented. The approach is inherently scalable and provides versatility for operation under diverse electrolyte and lighting conditions. The concept is validated using a 1 cm 2 triple-junction photovoltaic cell with its illuminated photocathode protected by a composite coating comprising an organic encapsulant with an embedded catalytic support. The device is compatible with operation under conditions ranging from 1 Mmore » H 2SO 4 to 1 M KOH, enabling flexibility in selection of semiconductor, electrolyte, membrane, and catalyst. Stable operation at a solar-to-hydrogen conversion efficiency of >10% is demonstrated under continuous operation, as well as under diurnal light cycling for at least 4 d, with simulated sunlight. Operational characteristics are validated by extended time outdoor testing. A membrane ensures products are separated, with nonexplosive gas streams generated for both alkaline and acidic systems. Finally, analysis of operational characteristics under different lighting conditions is enabled by comparison of a device model to experimental data.« less

Mechanical tolerances study through simulations and experimental characterization for a 1000X micro-concentrator CPV module

NASA Astrophysics Data System (ADS)

Ritou, Arnaud; Voarino, Philippe; Goubault, Baptiste; David, Nadine; Bernardis, Sarah; Raccurt, Olivier; Baudrit, Mathieu

2017-09-01

Existing CPV technology markets are not compliant with a standard configuration. Concentrations vary from several suns to more than 1000 suns and the optical technology used could be very different. Nowadays, the market trends are moving toward more and more compact optical systems in order to exploit the Light Emitting Diode (LED) like approach. The aim is to increase the optical efficiency by using an ultra-short focal distance and to improve thermal management. Moreover the efficiency to weight ratio is increasing and the solar cell size becomes sub-millimetric. With these conditions, more stringent mechanical tolerances are essential to ensure an optimum optical alignment between cells and optics. A new process of micro-concentrator manufacturing is developed in this work. This process enables manufacturing and auto-alignment of Primary Optical Elements (POE) with Secondary Optical Elements (SOE) and solar cells with respect to certain mechanical tolerances. A 1000X micro-concentrator is manufactured with 0.6 x 0.6 mm² triple-junction cells and molded silicone optics. Mechanical alignment defects are studied by ray-tracing simulations and a prototype is characterized with respect to its mechanical behavior. An efficiency of 33.4% is measured with a Cell-to-Module ratio of 77.8%.

Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Hung, Chao-Yu; Evstropov, Valery; Mintairov, Mikhail; Shvarts, Maxim; Okada, Yoshitaka

2013-12-01

In this paper, we focused on developing an accurate model to describe the luminescent coupling (L-C) effect in multijunction solar cells (MJSC) under light concentration. We present here a transcend current-voltage (I-V) formula combined with a self-consistent simulation algorithm to derive the coupling yield γ dependence on light intensity by including the electrical parameters such as shunt resistance (Rsh) and series resistance (Rs), which were ignored in previous simulation models. The effects of both Rsh and Rs on γ were revealed, and the dependence of γ on the external voltage bias Vbias was investigated. Meanwhile, we have performed experiments to determine coupling yield γ by measuring the I-V curves of individual subcell of InGaP/GaAs/Ge triple junction solar cell under varied light intensity. We found that the measured results are only in good agreement with the simulated data obtained from the model where the resistance parameters were included. Based on these results, we calculated the conversion efficiency of MJSC and found that the efficiency increase due to L-C effect is 0.31% under 1 sun and 1.07% under 1000 suns. Thus the L-C analysis results presented here will work as an additional device optimization criteria for MJSC toward higher efficiency.

Component Cell-Based Restriction of Spectral Conditions and the Impact on CPV Module Power Rating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muller, Matthew T; Steiner, Marc; Siefer, Gerald

One approach to consider the prevailing spectral conditions when performing CPV module power ratings according to the standard IEC 62670-3 is based on spectral matching ratios (SMRs) determined by the means of component cell sensors. In this work, an uncertainty analysis of the SMR approach is performed based on a dataset of spectral irradiances created with SMARTS2. Using these illumination spectra, the respective efficiencies of multijunction solar cells with different cell architectures are calculated. These efficiencies were used to analyze the influence of different component cell sensors and SMR filtering methods. The 3 main findings of this work are asmore » follows. First, component cells based on the lattice-matched triple-junction (LM3J) cell are suitable for restricting spectral conditions and are qualified for the standardized power rating of CPV modules - even if the CPV module is using multijunction cells other than LM3J. Second, a filtering of all 3 SMRs with +/-3.0% of unity results in the worst case scenario in an underestimation of -1.7% and overestimation of +2.4% compared to AM1.5d efficiency. Third, there is no benefit in matching the component cells to the module cell in respect to the measurement uncertainty.« less

Results From an International Measurement Round Robin of III-V Triple-Junction Solar Cells Under Air Mass Zero

DTIC Science & Technology

2006-05-01

Loreto Pazos Bazán13, Sheila Bailey14 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) AND ADDRESS(ES) 8. PERFORMING...Toporow12, Trinidad Gómez13, Loreto Pazos Bazán13 Sheila Bailey14 1Ohio Aerospace Institute, 2QinetiQ, Cody Technology Park, 3Fraunhofer Institute

Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell.

PubMed

Wang, Y; Zhang, Y; Zhang, D; He, S; Li, X

2015-12-01

In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

Silver nanoparticles induce tight junction disruption and astrocyte neurotoxicity in a rat blood-brain barrier primary triple coculture model.

PubMed

Xu, Liming; Dan, Mo; Shao, Anliang; Cheng, Xiang; Zhang, Cuiping; Yokel, Robert A; Takemura, Taro; Hanagata, Nobutaka; Niwa, Masami; Watanabe, Daisuke

2015-01-01

Silver nanoparticles (Ag-NPs) can enter the brain and induce neurotoxicity. However, the toxicity of Ag-NPs on the blood-brain barrier (BBB) and the underlying mechanism(s) of action on the BBB and the brain are not well understood. To investigate Ag-NP suspension (Ag-NPS)-induced toxicity, a triple coculture BBB model of rat brain microvascular endothelial cells, pericytes, and astrocytes was established. The BBB permeability and tight junction protein expression in response to Ag-NPS, NP-released Ag ions, and polystyrene-NP exposure were investigated. Ultrastructural changes of the microvascular endothelial cells, pericytes, and astrocytes were observed using transmission electron microscopy (TEM). Global gene expression of astrocytes was measured using a DNA microarray. A triple coculture BBB model of primary rat brain microvascular endothelial cells, pericytes, and astrocytes was established, with the transendothelial electrical resistance values >200 Ω·cm(2). After Ag-NPS exposure for 24 hours, the BBB permeability was significantly increased and expression of the tight junction (TJ) protein ZO-1 was decreased. Discontinuous TJs were also observed between microvascular endothelial cells. After Ag-NPS exposure, severe mitochondrial shrinkage, vacuolations, endoplasmic reticulum expansion, and Ag-NPs were observed in astrocytes by TEM. Global gene expression analysis showed that three genes were upregulated and 20 genes were downregulated in astrocytes treated with Ag-NPS. Gene ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway analysis showed that the 23 genes were associated with metabolic processes, biosynthetic processes, response to stimuli, cell death, the MAPK pathway, and so on. No GO term and KEGG pathways were changed in the released-ion or polystyrene-NP groups. Ag-NPS inhibited the antioxidant defense of the astrocytes by increasing thioredoxin interacting protein, which inhibits the Trx system, and decreasing Nr4a1 and Dusp1. Meanwhile, Ag-NPS induced inflammation and apoptosis through modulation of the MAPK pathway or B-cell lymphoma-2 expression or mTOR activity in astrocytes. These results draw our attention to the importance of Ag-NP-induced toxicity on the neurovascular unit and provide a better understanding of its toxicological mechanisms on astrocytes.

Geochemistry of the mantle beneath the Rodriguez Triple Junction and the South-East Indian Ridge

NASA Astrophysics Data System (ADS)

Michard, A.; Montigny, R.; Schlich, R.

1986-05-01

Rare earth element abundances and Sr, Nd. Pb isotope compositions have been measured on zero-age dredge samples from the Rodriguez Triple Junction (RTJ) and the South-East Indian Ridge (SEIR), Along the SEIR. the geochemical "halo" of the St. Paul hot spot has a half-width of about 400 km and the data may be fairly well accounted for by a binary mixing between an Indian MORB-type component ( 87Sr/ 86Sr = 0.7028. 143Nd/ 144Nd = 0.51304. 206Pb/ 204Pb = 17.8) and the plume-type St. Paul component (0.7036, 0.5129, and 18.7 respectively). The alignment of the lead isotope data is particularly good with an apparent age of 1.95 ± 0.13 Ga and Th/U source value of 3.94. One sample dredged on the ridge 60 km southeast of St. Paul bears a definite Kerguelen isotopic signature. The RTJ has distinctive geochemical properties which contrast with those of the adjacent ridge segments. Low 206Pb/ 204Pb ratios which plots to the left of the geochron, rather high 208Pb/ 204Pb and 87Sr/ 87Sr ratios (17.4. 37.4, and 0.7031 respectively), a striking isotopic homogeneity, and variable LREE/HREE fractionation with (La/Sm) N, = 0.3-0.8 make this triple junction an anomalous site. The geochemical properties of the Indian Ocean basats have been examined using a three-component mantle model involving (a) a normal MORB-type source though to represent the depleted upper mantle matrix, (b) an OIB-type source of uncertain parentage (recycled oceanic crust?), and (c) a component with low μ. low Sm/Nd. high Rb/Sr (time-averaged value) which is tentatively assigned to ancient hydrothermal and abyssal sediments recycled in the mantle. The high 208Pb/ 204Pb and 87Sr/ 86Sr ratios typical of the Dupal anomaly are likely due to the widespread distribution of this latter component in the basalt source from this area. including that for MORBs.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions

NASA Astrophysics Data System (ADS)

Nandan, S. R.; Agarwal, Vikas; Banerjee, Sanjay K.

1997-08-01

We have examined low energy BCl2 and BBr2 implants as a means of fabricating ultra-shallow P+-N junctions. Five keV and 9 keV BCl2 implants and 18 keV BBr2 implants have been compared to 5 keV BF2 implants to study the benefits of using these species. BCl2 and BBr2, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 1017 cm-3 background doping) for 5 keV BCl2 implants as compared to 5 keV BF2 implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr2 implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl2 implanted junctions have leakage current densities of approximately 1 (mu) A/cm2 as compared to 10 nA/cm2 for the BF2 implants. BBr2 implants have a lower leakage density of approximately 50 nA/cm2. Low energy BBr2 implants offer an exciting alternative for fabricating low leakage, ultra-shallow P+-N junctions.

Dilute group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw; Yu, Kin Man

2015-02-24

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

2012-07-31

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Use of spectroscopic techniques for uranium(VI)/montmorillonite interaction modeling.

PubMed

Kowal-Fouchard, A; Drot, R; Simoni, E; Ehrhardt, J J

2004-03-01

To experimentally identify both clay sorption sites and sorption equilibria and to understand the retention mechanisms at a molecular level, we have characterized the structure of hexavalent uranium surface complexes resulting from the interaction between the uranyl ions and the surface retention groups of a montmorillonite clay. We have performed laser-induced fluorescence spectroscopy (LIFS) and X-ray photoelectron spectroscopy (XPS) on uranyl ion loaded montmorillonite. These structural results were then compared to those obtained from the study of uranyl ions sorbed onto an alumina and also from U(VI) sorbed on an amorphous silica. This experimental approach allowed for a clear determination of the reactive surface sites of montmorillonite for U(VI) sorption. The lifetime values and the U4f XPS spectra of uranium(VI) sorbed on montmorillonite have shown that this ion is sorbed on both exchange and edge sites. The comparison of U(VI)/clay and U(VI)/oxide systems has determined that the interaction between uranyl ions and montmorillonite edge sites occurs via both [triple bond]AlOH and [triple bond]SiOH surface groups and involves three distinct surface complexes. The surface complexation modeling of the U(VI)/montmorillonite sorption edges was determined using the constant capacitance model and the above experimental constraints. The following equilibria were found to account for the uranyl sorption mechanisms onto montmorillonite for metal concentrations ranged from 10(-6) to 10(-3) M and two ionic strengths (0.1 and 0.5 M): 2[triple bond]XNa + UO2(2+) <==> ([triple bond]X)2UO2 + 2Na+, log K0(exch) = 3.0; [triple bond]Al(OH)2 + UO2(2+) <==> [triple bond]Al(OH)2UO2(2+), log K0(Al) = 14.9; [triple bond]Si(OH)2 + UO2(2+) <==> [triple bond]SiO2UO2 + 2H+, log K0(Si1) = -3.8; and [triple bond]Si(OH)2 + 3UO2(2+) + 5H2O <==> [triple bond]SiO2(UO2)3(OH)5- + 7H+, log K0(Si2) = -20.0.

Electron-beam-induced information storage in hydrogenated amorphous silicon device

DOEpatents

Yacobi, Ben G.

1986-01-01

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

NASA Astrophysics Data System (ADS)

Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

2018-04-01

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Examination of Applying Amorphous Rolled Core to Permanent Magnet Synchronous Motors

NASA Astrophysics Data System (ADS)

Amano, Hisato; Enomoto, Yuji; Ito, Motoya; Itabashi, Hiromitsu; Tanigawa, Sigeho; Masaki, Ryoso

Amorphous alloy exhibits high permeability and extremely low iron loss compared to magnetic steel sheet. Therefore, it is expected to contribute to the efficiency improvement of electromagnetic application products such as motors, generators, and transformers. In this paper, we examined an axial-type motor that uses the rolled amorphous core as a stator core for the purpose of applying amorphous alloy to a motor for air-conditioning equipments. We propose the motor structure to use amorphous alloy as a rolled core without complicated processing, and the evaluation results of the trial motor clarified that this structure is able to meet the target motor efficiency of 85% under the conditions that the size of the motor is below φ100mm × 60mm and that ferrite magnets are used.

Self-assembled RNA-triple-helix hydrogel scaffold for microRNA modulation in the tumour microenvironment

NASA Astrophysics Data System (ADS)

Conde, João; Oliva, Nuria; Atilano, Mariana; Song, Hyun Seok; Artzi, Natalie

2016-03-01

The therapeutic potential of miRNA (miR) in cancer is limited by the lack of efficient delivery vehicles. Here, we show that a self-assembled dual-colour RNA-triple-helix structure comprising two miRNAs--a miR mimic (tumour suppressor miRNA) and an antagomiR (oncomiR inhibitor)--provides outstanding capability to synergistically abrogate tumours. Conjugation of RNA triple helices to dendrimers allows the formation of stable triplex nanoparticles, which form an RNA-triple-helix adhesive scaffold upon interaction with dextran aldehyde, the latter able to chemically interact and adhere to natural tissue amines in the tumour. We also show that the self-assembled RNA-triple-helix conjugates remain functional in vitro and in vivo, and that they lead to nearly 90% levels of tumour shrinkage two weeks post-gel implantation in a triple-negative breast cancer mouse model. Our findings suggest that the RNA-triple-helix hydrogels can be used as an efficient anticancer platform to locally modulate the expression of endogenous miRs in cancer.

Grain boundary, triple junction and quadruple point mobility controlled normal grain growth

NASA Astrophysics Data System (ADS)

Rios, P. R.; Glicksman, M. E.

2015-07-01

Reduction in stored free energy provides the thermodynamic driving force for grain and bubble growth in polycrystals and foams. Evolution of polycrystalline networks exhibit the additional complication that grain growth may be controlled by several kinetic mechanisms through which the decrease in network energy occurs. Polyhedral boundaries, triple junctions (TJs), and quadruple points (QPs) are the geometrically distinct elements of three dimensional networks that follow Plateau's rules, provided that grain growth is limited by diffusion through, and motion of, cell boundaries. Shvindlerman and co-workers have long recognized the kinetic influences on polycrystalline grain growth of network TJs and QPs. Moreover, the emergence of interesting polycrystalline nanomaterials underscored that TJs can indeed influence grain growth kinetics. Currently there exist few detailed studies concerned either with network distributions of grain size, number of faces per grain, or with 'grain trajectories', when grain growth is limited by the motion of its TJs or QPs. By contrast there exist abundant studies of classical grain growth limited by boundary mobility. This study is focused on a topological/geometrical representation of polycrystals to obtain statistical predictions of the grain size and face number distributions, as well as growth 'trajectories' during steady-state grain growth. Three limits to grain growth are considered, with grain growth kinetics controlled by boundary, TJ, and QP mobilities.

Evidence for triple-junction rifting focussed on local magmatic centres along Parga Chasma, Venus

NASA Astrophysics Data System (ADS)

Graff, J. R.; Ernst, R. E.; Samson, C.

2018-05-01

Parga Chasma is a discontinuous rift system marking the southern boundary of the Beta-Atla-Themis (BAT) region on Venus. Along a 1500 km section of Parga Chasma, detailed mapping of Magellan Synthetic Aperture Radar images has revealed 5 coronae, 11 local rift zones distinct from a regional extension pattern, and 47 graben-fissure systems with radiating (28), linear (12) and circumferential (7) geometries. The magmatic centres of these graben-fissure systems typically coincide with coronae or large volcanoes, although a few lack any central magmatic or tectonic feature (i.e. are cryptic). Some of the magmatic centres are interpreted as the foci of triple-junction rifting that form the 11 local rift zones. Cross-cutting relationships between graben-fissure systems and local rift faults reveal synchronous formation, implying a genetic association. Additionally, cross-cutting relationships show that local rifting events postdate the regional extension along Parga Chasma, further indicating multiple stages of rifting. Evidence for multiple centres of younger magmatism and local rifting against a background of regional extension provides an explanation for the discontinuous morphology of Parga Chasma. Examination of the Atlantic Rift System (prior to ocean opening) on Earth provides an analogue to the rift morphologies observed on Venus.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2014-01-01

Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration of flight-type design that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four string currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-ESD functional testing showed that no degradation occurred due to the TSA events. These test results point to a robust design for application to a high-current, high-power mission.

Southeast Indian Ridge Between the Rodriguez Triple Junction and the Amsterdam and Saint-Paul Islands: Detailed Kinematics for the Past 20 m.y.

NASA Astrophysics Data System (ADS)

Royer, Jean-Yves; Schlich, Roland

1988-11-01

The Southeast Indian Ridge has the fastest spreading rates of the three mid-oceanic ridge systems of the Indian Ocean and has recorded the movements of Antarctica relative to Australia and India since the Late Cretaceous. New bathymetric and magnetic data have been collected by the R/V Marion Dufresne (1983) and the R/V Jean Charcot (1984), on the western part of this ridge, between the Rodriguez Triple Junction (25.5°S, 70.0°E) and the Amsterdam and Saint-Paul islands (38°S, 78°E). These data bring additional information on the seafloor magnetic pattern produced by the Southeast Indian Ridge during the past 20 m.y. A new tectonic chart is proposed for the area around the Amsterdam and Saint-Paul islands. We have mapped 17 isochrons ranging from anomalies 6 to 1 (20.5-0.7 Ma) based on the compilation of all the data available in this area (25 cruises). Their distribution clearly shows asymmetric features. Reconstructions at short time intervals show that stage poles of rotation describe oscillatory movements along a direction parallel to the Southeast Indian Ridge axis. Observed changes in spreading rates and the stability of the spreading directions since the Miocene support this result.

Sub-µm structure and volatile distribution of shocked lunar apatite

NASA Astrophysics Data System (ADS)

Cernok, A.; White, L. F.; Darling, J.; Dunlop, J.; Fougerouse, D.; William, R. D. A.; Reddy, S.; Saxey, D. W.; Zhao, X.; Franchi, I.; Anand, M.

2017-12-01

Apatite is a key mineral broadly used for studying volatiles in planetary materials. Most studies in this recent frontier of planetary exploration focus on volatile content and respective isotopic composition in apatite. However, there is an imperative to contextualize geochemical data with impact-induced features, given that most planetary materials experienced at least some shock deformation. This study aims at understanding the effect of high-level shock deformation on volatile distribution in apatite from lunar highlands samples. Combining Electron Backscatter Diffraction (EBSD), NanoSIMS and Atom Probe Microscopy (APM) analyses we are gaining an insight into the µm- and nm-scale structural variation in apatite from a shocked, maskelynite- and impact-melt-bearing norite. EBSD revealed degraded crystallinity, high density of low angle grain boundaries and domains of sub-µm granular features that appear amorphous at this length scales ( 80 x 40 nm). Texture component maps show up to 25° misorientation within a single grain - evidence of severe crystal-plastic deformation, but with no obvious evidence of recrystallization. APM revealed complex microstructure of the apparently amorphous domains defined by well developed, straight to slightly curved grain boundaries meeting at 120° triple junctions. This equilibrium texture is probably accommodated by annealing and recrystallization of apatite due to the post-shock heating. Crystallites range in size from 50 to 100 nm. Grain boundaries are defined by segregation of Mg, Si and Fe impurities, which possibly originate from surrounding phases. Cl and F show homogenous distribution over the length scale of the APM analysis (1 to 500 nm). H2O content measurements of 250-600 ppm by NanoSIMS are consistent with the lower range of previously reported values for this rock, with no obvious correlation with the level of crystallinity. δD values are confirmed to be terrestrial-like and relatively constant. These preliminary data suggest that impact event(s) either did not disturb the volatile distribution and composition of homogenous magmatic apatite, or that it induced diffusion and homogenisation of primary volatile species during annealing. Apatites in a range of variably shocked lunar samples are currently being examined to further clarify this question.

Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip

NASA Astrophysics Data System (ADS)

Cardoso, F. A.; Ferreira, H. A.; Conde, J. P.; Chu, V.; Freitas, P. P.; Vidal, D.; Germano, J.; Sousa, L.; Piedade, M. S.; Costa, B. A.; Lemos, J. M.

2006-04-01

Magnetoresistive biochips have been recently introduced for the detection of biomolecular recognition. In this work, the detection site incorporates a thin-film diode in series with a magnetic tunnel junction (MTJ), leading to a matrix-based biochip that can be easily scaled up to screen large numbers of different target analytes. The fabricated 16×16 cell matrix integrates hydrogenated amorphous silicon (a-Si:H) diodes with aluminum oxide barrier MTJ. Each detection site also includes a U-shaped current line for magnetically assisted target concentration at probe sites. The biochip is being integrated in a portable, credit card size electronics control platform. Detection of 250 nm diameter magnetic nanoparticles by one of the matrix cells is demonstrated.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

The Stretched Lens Array (SLA): An Ultra-Light Photovoltaic Concentrator

NASA Technical Reports Server (NTRS)

ONeill, Mark J.; Pisczor, Michael F.; Eskenazi, Michael I.; McDanal, A. J.; George, Patrick J.; Botke, Matthew M.; Brandhorst, Henry W.; Edwards, David L.; Jaster, Paul A.

2002-01-01

A high-performance, ultralight, photovoltaic concentrator array is being developed for space power. The stretched lens array (SLA) uses stretched-membrane, silicone Fresnel lenses to concentrate sunlight onto triple-junction photovoltaic cells. The cells are mounted to a composite radiator structure. The entire solar array wing, including lenses, photovoltaic cell flex circuits, composite panels, hinges, yoke, wiring harness, and deployment mechanisms, has a mass density of 1.6 kg/sq.m. NASA Glenn has measured 27.4% net SLA panel efficiency, or 375 W/sq.m. power density, at room temperature. At GEO operating cell temperature (80 C), this power density will be 300 W/sq.m., resulting in more than 180 W/kg specific power at the full wing level. SLA is a direct ultralight descendent of the successful SCARLET array on NASA's Deep Space 1 spacecraft. This paper describes the evolution from SCARLET to SLA, summarizes the SLA's key features, and provides performance and mass data for this new concentrator array.

Enhanced power generation in concentrated photovoltaics using broadband antireflective coverglasses with moth eye structures.

PubMed

Song, Young Min; Jeong, Yonkil; Yeo, Chan Il; Lee, Yong Tak

2012-11-05

We present the effect of broadband antireflective coverglasses (BARCs) with moth eye structures on the power generation capability of a sub-receiver module for concentrated photovoltaics. The period and height of the moth eye structures were designed by a rigorous coupled-wave analysis method in order to cover the full solar spectral ranges without transmission band shrinkage. The BARCs with moth eye structures were prepared by the dry etching of silver (Ag) nanomasks, and the fabricated moth eye structures on coverglass showed strongly enhanced transmittance compared to the bare glass with a flat surface, at wavelengths of 300 - 1800 nm. The BARCs were mounted on InGaP/GaAs/Ge triple-junction solar cells and the power conversion efficiency of this sub-receiver module reached 42.16% for 196 suns, which is a 7.41% boosted value compared to that of a module with bare coverglass, without any detrimental changes of the open circuit voltages (V_oc) and fill factor (FF).

Enhanced power generation in concentrated photovoltaics using broadband antireflective coverglasses with moth eye structures.

PubMed

Song, Young Min; Jeong, Yonkil; Yeo, Chan Il; Lee, Yong Tak

2012-11-05

We present the effect of broadband antireflective coverglasses (BARCs) with moth eye structures on the power generation capability of a sub-receiver module for concentrated photovoltaics. The period and height of the moth eye structures were designed by a rigorous coupled-wave analysis method in order to cover the full solar spectral ranges without transmission band shrinkage. The BARCs with moth eye structures were prepared by the dry etching of silver (Ag) nanomasks, and the fabricated moth eye structures on coverglass showed strongly enhanced transmittance compared to the bare glass with a flat surface, at wavelengths of 300 - 1800 nm. The BARCs were mounted on InGaP/GaAs/Ge triple-junction solar cells and the power conversion efficiency of this sub-receiver module reached 42.16% for 196 suns, which is a 7.41% boosted value compared to that of a module with bare coverglass, without any detrimental changes of the open circuit voltages (V(oc)) and fill factor (FF).

Scalable Production of Mechanically Robust Antireflection Film for Omnidirectional Enhanced Flexible Thin Film Solar Cells.

PubMed

Wang, Min; Ma, Pengsha; Yin, Min; Lu, Linfeng; Lin, Yinyue; Chen, Xiaoyuan; Jia, Wei; Cao, Xinmin; Chang, Paichun; Li, Dongdong

2017-09-01

Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll-to-roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si-based triple-junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance.

Electrical-optical characterization of multijunction solar cells under 2000X concentration

NASA Astrophysics Data System (ADS)

Bonsignore, Gaetano; Gallitto, Aurelio Agliolo; Agnello, Simonpietro; Barbera, Marco; Candia, Roberto; Cannas, Marco; Collura, Alfonso; Dentici, Ignazio; Gelardi, Franco Mario; Cicero, Ugo Lo; Montagnino, Fabio Maria; Paredes, Filippo; Sciortino, Luisa

2014-09-01

In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties by the electroluminescence (EL) spectra of the top (InGaP) and middle (InGaAs) subcells. From the analysis of the experimental data we extracted the bandgap energies of these III-V semiconductors in the range 305÷385 K.

The Space Technology 5 Power System Design

NASA Technical Reports Server (NTRS)

Stewart, Karen D.; Hernandez-Pellerano, Amri I.

2005-01-01

The Space Technology 5 (ST5) mission is a NASA New Millennium Program (NMP) project that was developed to validate new technologies for future missions and to demonstrate the feasibility of building and launching multiple, miniature spacecraft that can operate as science probes, collecting research quality measurements. The three satellites in the ST5 constellation will be launched into a sun synchronous LEO (Low Earth Orbit) in early 2006. ST5 fits in the 25 kilogram and 24 Watt class of miniature but fully capable spacecraft. The power system design features the use of new technology components and a low voltage power bus. In order to hold the mass and volume low and to qualify new technologies for future use in space, high efficiency triple junction solar cells and a lithium ion battery were baselined into the design. The Power System Electronics (PSE) was designed for a high radiation environment and uses hybrid microcircuits for power switching and over current protection. The ST5 power system architecture and technologies will be presented.

Density Functional Theory Calculations of the Role of Defects in Amorphous Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Johlin, Eric; Wagner, Lucas; Buonassisi, Tonio; Grossman, Jeffrey C.

2010-03-01

Amorphous silicon holds promise as a cheap and efficient material for thin-film photovoltaic devices. However, current device efficiencies are severely limited by the low mobility of holes in the bulk amorphous silicon material, the cause of which is not yet fully understood. This work employs a statistical analysis of density functional theory calculations to uncover the implications of a range of defects (including internal strain and substitution impurities) on the trapping and mobility of holes, and thereby also on the total conversion efficiency. We investigate the root causes of this low mobility and attempt to provide suggestions for simple methods of improving this property.

Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

PubMed Central

Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

2015-01-01

World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

Acid-base properties of aqueous illite surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Q.; Sun, Z.; Forsling, W.

In this paper, the acid-base properties of illite/water suspensions are examined using the constant capacitance surface complexation model. On the basis of results of potentiometric titrations and solubility experiments, the authors conclude that the proton reactions in the supernatants of illite suspensions can be successfully represented by proton reactions of Al(H{sub 2}O){sub 6}{sup 3+} and Si(OH){sub 4} in water solutions. For illustrating the acidic characteristics of aqueous illite surfaces, two surface protonation models are proposed: (1) one site-one pK{sub a} model, {triple_bond}SOH {r_reversible} {triple_bond}SO{sup {minus}} + H{sup +}, pK{sub a}{sup int} = 4.12-4.23; (2) two sites-two pK{sub a}s model, {triple_bond}S{submore » 1}OH {r_reversible} {triple_bond}S{sup 1}O{sup {minus}} + H{sup +}, pK{sub a{sub I}} = 4.17-4.44, and {triple_bond}S{sub II}OH {r_reversible} {triple_bond}S{sub II}O{sup {minus}} + H{sup +}, pK{sub a{sub II}}{sup int} = 6.35-7.74. Evaluation of these two models indicates that both of them can give good descriptions of the experimental data of systems with different illite concentrations and ionic strengths and that the one site-one pK{sub a} model can be considered as a simplification of the two sites-two pK{sub a}s model. Since both models assume only deprotonation reactions at the illite surfaces, they suggest that the surface behavior of the illite is similar to that of amorphous SiO{sub 2}. Model assumptions, experimental procedures, and evaluative criteria are detailed in the paper.« less

Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers

PubMed Central

Ahmadivand, Arash; Gerislioglu, Burak; Sinha, Raju; Karabiyik, Mustafa; Pala, Nezih

2017-01-01

Capacitive coupling and direct shuttling of charges in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead to excitation of significantly different dipolar and charge transfer plasmon (CTP) resonances, respectively. Here, we demonstrate the excitation of dipolar and CTP resonant modes in metallic nanodimers bridged by phase-change material (PCM) sections, material and electrical characteristics of which can be controlled by external stimuli. Ultrafast switching (in the range of a few nanoseconds) between amorphous and crystalline phases of the PCM section (here Ge2Sb2Te5 (GST)) allows for designing a tunable plasmonic switch for optical communication applications with significant modulation depth (up to 88%). Judiciously selecting the geometrical parameters and taking advantage of the electrical properties of the amorphous phase of the GST section we adjusted the extinction peak of the dipolar mode at the telecommunication band (λ~1.55 μm), which is considered as the OFF state. Changing the GST phase to crystalline via optical heating allows for direct transfer of charges through the junction between nanodisks and formation of a distinct CTP peak at longer wavelengths (λ~1.85 μm) far from the telecommunication wavelength, which constitutes the ON state. PMID:28205643

Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers.

PubMed

Ahmadivand, Arash; Gerislioglu, Burak; Sinha, Raju; Karabiyik, Mustafa; Pala, Nezih

2017-02-16

Capacitive coupling and direct shuttling of charges in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead to excitation of significantly different dipolar and charge transfer plasmon (CTP) resonances, respectively. Here, we demonstrate the excitation of dipolar and CTP resonant modes in metallic nanodimers bridged by phase-change material (PCM) sections, material and electrical characteristics of which can be controlled by external stimuli. Ultrafast switching (in the range of a few nanoseconds) between amorphous and crystalline phases of the PCM section (here Ge 2 Sb 2 Te 5 (GST)) allows for designing a tunable plasmonic switch for optical communication applications with significant modulation depth (up to 88%). Judiciously selecting the geometrical parameters and taking advantage of the electrical properties of the amorphous phase of the GST section we adjusted the extinction peak of the dipolar mode at the telecommunication band (λ~1.55 μm), which is considered as the OFF state. Changing the GST phase to crystalline via optical heating allows for direct transfer of charges through the junction between nanodisks and formation of a distinct CTP peak at longer wavelengths (λ~1.85 μm) far from the telecommunication wavelength, which constitutes the ON state.

Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers

NASA Astrophysics Data System (ADS)

Ahmadivand, Arash; Gerislioglu, Burak; Sinha, Raju; Karabiyik, Mustafa; Pala, Nezih

2017-02-01

Capacitive coupling and direct shuttling of charges in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead to excitation of significantly different dipolar and charge transfer plasmon (CTP) resonances, respectively. Here, we demonstrate the excitation of dipolar and CTP resonant modes in metallic nanodimers bridged by phase-change material (PCM) sections, material and electrical characteristics of which can be controlled by external stimuli. Ultrafast switching (in the range of a few nanoseconds) between amorphous and crystalline phases of the PCM section (here Ge2Sb2Te5 (GST)) allows for designing a tunable plasmonic switch for optical communication applications with significant modulation depth (up to 88%). Judiciously selecting the geometrical parameters and taking advantage of the electrical properties of the amorphous phase of the GST section we adjusted the extinction peak of the dipolar mode at the telecommunication band (λ~1.55 μm), which is considered as the OFF state. Changing the GST phase to crystalline via optical heating allows for direct transfer of charges through the junction between nanodisks and formation of a distinct CTP peak at longer wavelengths (λ~1.85 μm) far from the telecommunication wavelength, which constitutes the ON state.

An Amorphous Network Model for Capillary Flow and Dispersion in a Partially Saturated Porous Medium

NASA Astrophysics Data System (ADS)

Simmons, C. S.; Rockhold, M. L.

2013-12-01

Network models of capillary flow are commonly used to represent conduction of fluids at pore scales. Typically, a flow system is described by a regular geometric lattice of interconnected tubes. Tubes constitute the pore throats, while connection junctions (nodes) are pore bodies. Such conceptualization of the geometry, however, is questionable for the pore scale, where irregularity clearly prevails, although prior published models using a regular lattice have demonstrated successful descriptions of the flow in the bulk medium. Here a network is allowed to be amorphous, and is not subject to any particular lattice structure. Few network flow models have treated partially saturated or even multiphase conditions. The research trend is toward using capillary tubes with triangular or square cross sections that have corners and always retain some fluid by capillarity when drained. In contrast, this model uses only circular capillaries, whose filled state is controlled by a capillary pressure rule for the junctions. The rule determines which capillary participate in the flow under an imposed matric potential gradient during steady flow conditions. Poiseuille's Law and Laplace equation are used to describe flow and water retention in the capillary units of the model. A modified conjugate gradient solution for steady flow that tracks which capillary in an amorphous network contribute to fluid conduction was devised for partially saturated conditions. The model thus retains the features of classical capillary models for determining hydraulic flow properties under unsaturated conditions based on distribution of non-interacting tubes, but now accounts for flow exchange at junctions. Continuity of the flow balance at every junction is solved simultaneously. The effective water retention relationship and unsaturated permeability are evaluated for an extensive enough network to represent a small bulk sample of porous medium. The model is applied for both a hypothetically randomly generate network and for a directly measured porous medium structure, by means of xray-CT scan. A randomly generated network has the benefit of providing ensemble averages for sample replicates of a medium's properties, whereas network structure measurements are expected to be more predictive. Dispersion of solute in a network flow is calculate by using particle tracking to determine the travel time breakthrough between inflow and outflow boundaries. The travel time distribution can exhibit substantial skewness that reflects both network velocity variability and mixing dilution at junctions. When local diffusion is not included, and transport is strictly advective, then the skew breakthrough is not due to mobile-immobile flow region behavior. The approach of dispersivity to its asymptotic value with sample size is examined, and may be only an indicator of particular stochastic flow variation. It is not proven that a simplified network flow model can accurately predict the hydraulic properties of a sufficiently large-size medium sample, but such a model can at least demonstrate macroscopic flow resulting from the interaction of physical processes at pore scales.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

PubMed

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

PubMed Central

Martí, A.; Luque, A.

2015-01-01

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE PAGES

Young, James L.; Steiner, Myles A.; Döscher, Henning; ...

2017-03-13

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, James L.; Steiner, Myles A.; Döscher, Henning

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Interaction of acetonitrile with the surfaces of amorphous and crystalline ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schaff, J.E.; Roberts, J.T.

1999-10-12

The adsorption of acetonitrile (CH{sub 3}CN) on ultrathin films of ice under ultrahigh vacuum was investigated with temperature-programmed desorption ass spectrometry (TPD) and Fourier transform infrared reflection absorption spectroscopy (FTIRAS). Two types of film were studied, amorphous and crystalline. On the amorphous films, two sates of adsorbed acetonitrile were observed by TPD and FTIRAS. One of the states is attributed to acetonitrile that is hydrogen bonded to agree OH group at the ice surface; the other state is assigned to acetonitrile that is purely physiorbed. Evidence for the hydrogen-bonded state is two-fold. First, there is a large kinetic isotope effectmore » for desorption from H{sub 2}O-and D{sub 2}O-ice: the desorption temperatures from ice-h{sub 2} and ice-d{sub 2} are {approximately}161 and {approximately}176 K, respectively. Second, the C{triple{underscore}bond}N stretching frequency (2,265 cm{sup {minus}1}) is 16 cm{sup {minus}1} is greater than that of physisorbed acetonitrile, and it is roughly equal to that of acetonitrile which is hydrogen bonded to an OH group at the air-liquid water interface. On the crystalline films, there is no evidence for a hydrogen-bonded state in the TPD spectra. The FTIRAS spectra do show that some hydrogen-bonded acetonitrile is present but at a maximum coverage that is roughly one-sixth of that on the amorphous surface. The difference between the amorphous and crystalline surfaces cannot be attributed to a difference n surface areas. Rather, this work provides additional evidence that the surface chemical properties of amorphous ice are different from those of crystalline ice.« less

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

NASA Technical Reports Server (NTRS)

Partain, L. D.; Chung, B.-C.; Virshup, G. F.; Schultz, J. C.; Macmillan, H. F.; Ristow, M. Ladle; Kuryla, M. S.; Bertness, K. A.

1991-01-01

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

Pattern, age, and origin of structural features within the Ozark plateau and the relationship to ore deposits

NASA Technical Reports Server (NTRS)

Arvidson, R. E.

1981-01-01

Topography and gravity anomaly images for the continental United States were constructed. Evidence was found based on gravity, remote sensing data, the presence, trend, and character of fractures, and on rock type data, for a Precambrian rift through Missouri. The feature is probably the failed arm of a triple junction that existed prior to formation of the granite-rhyolite terrain of southern Missouri.

A Safety and Tolerability Study of INCAGN02385 in Select Advanced Malignancies

ClinicalTrials.gov

2018-05-15

Cervical Cancer; Microsatellite Instability (MSI)-High Endometrial Cancer; Gastric Cancer (Including Stomach and Gastroesophageal Junction [GEJ]); Esophageal Cancer; Hepatocellular Carcinoma; Melanoma (Uveal Melanoma Excluded); Merkel Cell Carcinoma; Mesothelioma; MSI-high Colorectal Cancer; Non-small Cell Lung Cancer (NSCLC); Ovarian Cancer; Squamous Cell Carcinoma of the Head and Neck (SCCHN); Small Cell Lung Cancer (SCLC); Renal Cell Carcinoma (RCC); Triple-negative Breast Cancer; Urothelial Carcinoma; Diffuse Large B-cell Lymphoma

The Strength of Binary Junctions in Hexagonal Close-Packed Crystals

DTIC Science & Technology

2014-03-01

equilib- rium, on either slip plane, the dislocation on that plane intersects both triple points at the same angle with the junc- tion line, regardless...electronic properties of threading dislocations in wide band-gap gallium nitride (a wurtzite crystal structure consisting of two interpenetrating hcp...yield surface was composed of individual points , it pro- vided insight on the resistance of the lock to breaking as a result of the applied stresses. Via

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

Influence of voids distribution on the deformation behavior of nanocrystalline palladium

NASA Astrophysics Data System (ADS)

Bachurin, D. V.

2018-07-01

Uniaxial deformation of three-dimensional nanocrystalline palladium containing porosity in the form of voids was investigated by means of molecular dynamics method. Simulations were performed at temperature of 300 K and at a constant strain rate of 108s-1. Two cases of voids distribution were considered: random and at triple or quadrupole junctions. It has been revealed that both the voids distribution and subsequent annealing at elevated temperature influence the deformation behavior of nanocrystalline palladium. In particular, the presence of voids at grain junctions results in a reduction of the Young's modulus and more pronounced softening effect during plastic deformation. The subsequent annealing evokes shrinkage of voids and strengthening effect. Contribution of grain boundary accommodation processes into both elastic and plastic deformation of nanocrystalline materials is discussed.

Triple-Shape Memory Polymers Based on Self-Complementary Hydrogen Bonding

PubMed Central

Ware, Taylor; Hearon, Keith; Lonnecker, Alexander; Wooley, Karen L.; Maitland, Duncan J.; Voit, Walter

2012-01-01

Triple shape memory polymers (TSMPs) are a growing subset of a class of smart materials known as shape memory polymers, which are capable of changing shape and stiffness in response to a stimulus. A TSMP can change shapes twice and can fix two metastable shapes in addition to its permanent shape. In this work, a novel TSMP system comprised of both permanent covalent cross-links and supramolecular hydrogen bonding cross-links has been synthesized via a one-pot method. Triple shape properties arise from the combination of the glass transition of (meth)acrylate copolymers and the dissociation of self-complementary hydrogen bonding moieties, enabling broad and independent control of both glass transition temperature (Tg) and cross-link density. Specifically, ureidopyrimidone methacrylate and a novel monomer, ureidopyrimidone acrylate, were copolymerized with various alkyl acrylates and bisphenol A ethoxylate diacrylate. Control of Tg from 0 to 60 °C is demonstrated: concentration of hydrogen bonding moieties is varied from 0 to 40 wt %; concentration of the diacrylate is varied from 0 to 30 wt %. Toughness ranges from 0.06 to 0.14 MPa and is found to peak near 20 wt % of the supramolecular cross-linker. A widely tunable class of amorphous triple-shape memory polymers has been developed and characterized through dynamic and quasi-static thermomechanical testing to gain insights into the dynamics of supramolecular networks. PMID:22287811

Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

NASA Astrophysics Data System (ADS)

Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

2017-10-01

We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

The Relationships of Upper Plate Ridge-Trench-Trench and Ridge-Trench-Transform Triple Junction Evolution to Arc Lengthening, Subduction Zone initiation and Ophiolitic Forearc Obduction

NASA Astrophysics Data System (ADS)

Casey, J.; Dewey, J. F.

2013-12-01

The principal enigma of large obducted ophiolite slabs is that they clearly must have been generated by some form of organized sea-floor spreading/plate-accretion, such as may be envisioned for the oceanic ridges, yet the volcanics commonly have arc affinity (Miyashiro) with boninites (high-temperature/low-pressure, high Mg and Si andesites), which are suggestive of a forearc origin. PT conditions under which boninites and metamorphic soles form and observations of modern forearc systems lead us to the conclusion that ophiolite formation is associated with overriding plate spreading centers that intersect the trench to form ridge-trench-trench of ridge-trench-tranform triple junctions. The spreading centers extend and lengthen the forearc parallel to the trench and by definition are in supra-subduction zone (SSZ) settings. Many ophiolites likewise have complexly-deformed associated mafic-ultramafic assemblages that suggest fracture zone/transform along their frontal edges, which in turn has led to models involving the nucleation of subduction zones on fracture zones or transpressional transforms. Hitherto, arc-related sea-floor-spreading has been considered to be either pre-arc (fore-arc boninites) or post-arc (classic Karig-style back arc basins that trench-parallel split arcs). Syn-arc boninites and forearc oceanic spreading centers that involve a stable ridge/trench/trench triple or a ridge-trench-transform triple junction, the ridge being between the two upper plates, are consistent with large slab ophiolite formation in an obduction-ready settting. The direction of subduction must be oblique with a different sense in the two subduction zones and the oblique subduction cannot be partitioned into trench orthogonal and parallel strike-slip components. As the ridge spreads, new oceanic lithosphere is created within the forearc, the arc and fore-arc lengthen significantly, and a syn-arc ophiolite forearc complex is generated by this mechanism. The ophiolite ages along arc-strike; a distinctive diachronous MORB-like to boninitic to arc volcanic stratigraphy develops vertically in the forearc and eruption centers progressively migrate from the forearc back to the main arc massif with time. Dikes in the ophiolite are commonly highly oblique to the trench (as are back-arc magnetic anomalies in modern environments). Boninites and high-mg andesites are generated in the fore-arc under the aqueous, low pressure/high temperature, regime at the ridge above the instantaneously developed subducting and dehydrating slab. We review both modern subduction environments and ancient obducted ophiolite analogues that illustrate this tectonic model for subduction initiation and the creation and rapid divergent-convergent plate tectonic transitions to ophiolitic forearcs.

Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

NASA Astrophysics Data System (ADS)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Magnetotelluric 2D Modelling Provides Insight on the Structural Characteristics of the Guadalajara (Mexico) Triple Junction Domains

NASA Astrophysics Data System (ADS)

Arboleda Zapata, M. D. J., Sr.; Arzate-Flores, J.; Guevara Betancourt, R. E., Sr.

2017-12-01

The Jalisco Block is a continental microplate produced by the extension along three large structures: the Tepic-Zacoalco rift (TZR), the Colima rift (CR) and the Chapala rift that converge in a triple junction 50 km southwest of Guadalajara, Mexico, with orientation NW-SE, N-S, and E-W respectively. The present study focuses on investigating the deep structure of the north Colima and eastern Zacoalco grabens close to the Guadalajara triple junction (GTJ). This is a first study of its type that provide insight on the grabens structures and crustal characteristics underneath. We measured along two magnetotellurics (MT) profiles that cut perpendicularly the TZR (profile ZAC), and the northern CR (profile SAY) comprising a total of 24 broad band MT soundings. The ZAC profile has 11 stations and has a NE orientation, and the SAY profile has 14 station aligned E-W. Standard processing and editing procedures were completed, and distortion analysis was applied to the data set in order to define the dimensionality and electric strike of the separated profiles. Static shift was corrected using geology information to distinguish the different types of soundings and later averaging for those soundings located over the same lithology. The Bahr dimensionality parameters showed that the medium is mainly 3D for the SAY profile and 2D for the ZAC profile; furthermore, the regional geoelectric strike azimuth calculated with Bahr methodology were -4° and -48° respectively, with good concordance with the main surface structures. The tipper analysis permitted validated these results, as the real induction vectors were nearly perpendicular to main fault structures. All soundings were rotated to the respective regional strike and a 2D simultaneous inversion of the transverse electric (TE) mode, the transvers magnetic (TM) mode and the Tipper was completed. The RMS fitting error yield 3.2% for ZAC profile and 3.7% for SAY profile. Both profiles show a shallow conductive zone at north of the Colima Rift and the south of the Zacoalco rift, which are interpreted as lacustrine and fluvial sediments having maximum thickness of 1.5 and 1.0 km respectively. The profiles show a faulted resistive upper crust, 35 to 40 km thick, that is reliably correlated with mapped surface structures and consistent with two types of extensional processes.

Silver nanoparticles induce tight junction disruption and astrocyte neurotoxicity in a rat blood–brain barrier primary triple coculture model

PubMed Central

Xu, Liming; Dan, Mo; Shao, Anliang; Cheng, Xiang; Zhang, Cuiping; Yokel, Robert A; Takemura, Taro; Hanagata, Nobutaka; Niwa, Masami; Watanabe, Daisuke

2015-01-01

Background Silver nanoparticles (Ag-NPs) can enter the brain and induce neurotoxicity. However, the toxicity of Ag-NPs on the blood–brain barrier (BBB) and the underlying mechanism(s) of action on the BBB and the brain are not well understood. Method To investigate Ag-NP suspension (Ag-NPS)-induced toxicity, a triple coculture BBB model of rat brain microvascular endothelial cells, pericytes, and astrocytes was established. The BBB permeability and tight junction protein expression in response to Ag-NPS, NP-released Ag ions, and polystyrene-NP exposure were investigated. Ultrastructural changes of the microvascular endothelial cells, pericytes, and astrocytes were observed using transmission electron microscopy (TEM). Global gene expression of astrocytes was measured using a DNA microarray. Results A triple coculture BBB model of primary rat brain microvascular endothelial cells, pericytes, and astrocytes was established, with the transendothelial electrical resistance values >200 Ω·cm2. After Ag-NPS exposure for 24 hours, the BBB permeability was significantly increased and expression of the tight junction (TJ) protein ZO-1 was decreased. Discontinuous TJs were also observed between microvascular endothelial cells. After Ag-NPS exposure, severe mitochondrial shrinkage, vacuolations, endoplasmic reticulum expansion, and Ag-NPs were observed in astrocytes by TEM. Global gene expression analysis showed that three genes were upregulated and 20 genes were downregulated in astrocytes treated with Ag-NPS. Gene ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway analysis showed that the 23 genes were associated with metabolic processes, biosynthetic processes, response to stimuli, cell death, the MAPK pathway, and so on. No GO term and KEGG pathways were changed in the released-ion or polystyrene-NP groups. Ag-NPS inhibited the antioxidant defense of the astrocytes by increasing thioredoxin interacting protein, which inhibits the Trx system, and decreasing Nr4a1 and Dusp1. Meanwhile, Ag-NPS induced inflammation and apoptosis through modulation of the MAPK pathway or B-cell lymphoma-2 expression or mTOR activity in astrocytes. Conclusion These results draw our attention to the importance of Ag-NP-induced toxicity on the neurovascular unit and provide a better understanding of its toxicological mechanisms on astrocytes. PMID:26491287

Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

NASA Astrophysics Data System (ADS)

Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

2014-10-01

We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au; Tao, Zhikuo

2015-03-02

The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high lightmore » trapping within amorphous silicon layer.« less

Interplay of oxygen-evolution kinetics and photovoltaic power curves on the construction of artificial leaves

PubMed Central

Surendranath, Yogesh; Bediako, D. Kwabena; Nocera, Daniel G.

2012-01-01

An artificial leaf can perform direct solar-to-fuels conversion. The construction of an efficient artificial leaf or other photovoltaic (PV)-photoelectrochemical device requires that the power curve of the PV material and load curve of water splitting, composed of the catalyst Tafel behavior and cell resistances, be well-matched near the thermodynamic potential for water splitting. For such a condition, we show here that the current density-voltage characteristic of the catalyst is a key determinant of the solar-to-fuels efficiency (SFE). Oxidic Co and Ni borate (Co-Bi and Ni-Bi) thin films electrodeposited from solution yield oxygen-evolving catalysts with Tafel slopes of 52 mV/decade and 30 mV/decade, respectively. The consequence of the disparate Tafel behavior on the SFE is modeled using the idealized behavior of a triple-junction Si PV cell. For PV cells exhibiting similar solar power-conversion efficiencies, those displaying low open circuit voltages are better matched to catalysts with low Tafel slopes and high exchange current densities. In contrast, PV cells possessing high open circuit voltages are largely insensitive to the catalyst’s current density-voltage characteristics but sacrifice overall SFE because of less efficient utilization of the solar spectrum. The analysis presented herein highlights the importance of matching the electrochemical load of water-splitting to the onset of maximum current of the PV component, drawing a clear link between the kinetic profile of the water-splitting catalyst and the SFE efficiency of devices such as the artificial leaf. PMID:22689962

Evolution of the central Atlantic hot spots cluster in the last 100 Myr: interaction between plate tectonics, a lower mantle thermochemical instability and upper mantle secondary plumes

NASA Astrophysics Data System (ADS)

Sibrant, A.; Davaille, A.; Marques, F. O.; Hildenbrand, A.

2014-12-01

Born 200 Ma ago, the central Atlantic presents nowadays a large low seismic velocity anomaly in the lower mantle, a cluster of "hot" spots (Azores, Cape Verde, Madeira, Canary, Great Meteor), a mid-ocean ridge, and a triple junction located in the Azores. We carried out laboratory experiments to examine the possible links between mantle instabilities, plate boundary migration, and the
development of the volcanism on various spatial and temporal scales. Coupled with the current knowledge of these volcanic areas (tomography, tectonics and K/Ar dating), our fluid mechanics
experiments suggest that: (1) The Azores, as Canary, Cape Verde, Madeira Islands and Great Meteor seamounts might be the surface expression of a cluster of mantle instabilities rising from the top of a large thermochemical dome located in the lower mantle. However, such secondary plumes present a strong
time-dependence 5-40 Myr time scale. (2) These secondary instabilities could be sufficiently weak to adapt their motions to the pre-existing force
balance, and morphology and mechanical properties of the lithosphere. Based on current knowledge and modelling, we present a scenario of the Central Atlantic area evolution in the last 100 Ma combining a triple junction and decompression melting-generated buoyant material (i.e. such in volatiles and/or
temperature) under a cooling and thickening lithosphere.

The Role of Water Vapor and Dissociative Recombination Processes in Solar Array Arc Initiation

NASA Technical Reports Server (NTRS)

Galofar, J.; Vayner, B.; Degroot, W.; Ferguson, D.

2002-01-01

Experimental plasma arc investigations involving the onset of arc initiation for a negatively biased solar array immersed in low-density plasma have been performed. Previous studies into the arc initiation process have shown that the most probable arcing sites tend to occur at the triple junction involving the conductor, dielectric and plasma. More recently our own experiments have led us to believe that water vapor is the main causal factor behind the arc initiation process. Assuming the main component of the expelled plasma cloud by weight is water, the fastest process available is dissociative recombination (H2O(+) + e(-) (goes to) H* + OH*). A model that agrees with the observed dependency of arc current pulse width on the square root of capacitance is presented. A 400 MHz digital storage scope and current probe was used to detect arcs at the triple junction of a solar array. Simultaneous measurements of the arc trigger pulse, the gate pulse, the arc current and the arc voltage were then obtained. Finally, a large number of measurements of individual arc spectra were obtained in very short time intervals, ranging from 10 to 30 microseconds, using a 1/4 a spectrometer coupled with a gated intensified CCD. The spectrometer was systematically tuned to obtain optical arc spectra over the entire wavelength range of 260 to 680 nanometers. All relevant atomic lines and molecular bands were then identified.

A Magnetic Survey Of The MTJ(Mangatolu Triple Junction) Caldera On Lau Basin

NASA Astrophysics Data System (ADS)

Kwak, J.; Won, J.; Park, C.; Ko, Y.; Kim, C.; Jeong, E.; Yu, S.

2006-12-01

We have performed a magnetic survey to understand magnetic distribution and characteristics of the MTJ(Mangatolu Triple Junction) caldera. MTJ caldera(15°25'S, 174°00'W) is located between MTJ northeast extending branch which connects to the northeast Tonga trench[Wright et al, 2000] and the main line of Tofua volcanic arc. The caldera results from coupling between the crust of the Tonga microplate and the subducting Pacific plate[Macleod, 1996]. The MTJ is characterized severe deformation and neovolcanism[Parson and Tiffin, 1993], and has been reoriented during the Brunhes Chron[Zellmer et al, 2001]. Generally, low magnetization at crust is highly correlated with active hydrothermal vent field. The acidic and corrosive fluids that constitute marine hydrothermal vent systems can quickly alter or replace the iron-rich magnetic minerals, which reduce the magnetic remanence of the crustal rocks, in some cases to zero. Magnetic field data were observed by using high sensitivity proton magnetometer which is towed 300m behind the ship(R/V Onnuri). The data were first merged with the ship navigation. Then magnetic field was inverted for crustal magnetization using Parker[1974] inversion approach, which takes bathymetry into account assuming a constant layer thickness and then sufficient annihilator is added to magnetization solution to balance the positive and reverse polarity amplitudes. In this study, all inversions are calculated assuming a 500m source thickness.

Amorphous and Nanocomposite Materials for Energy-Efficient Electric Motors

NASA Astrophysics Data System (ADS)

Silveyra, Josefina M.; Xu, Patricia; Keylin, Vladimir; DeGeorge, Vincent; Leary, Alex; McHenry, Michael E.

2016-01-01

We explore amorphous soft-magnetic alloys as candidates for electric motor applications. The Co-rich system combines the benefits of low hysteretic and eddy-current losses while exhibiting negligible magnetostriction and robust mechanical properties. The amorphous precursors can be devitrified to form nanocomposite magnets. The superior characteristics of these materials offer the advantages of ease of handling in the manufacturing processing and low iron losses during motor operation. Co-rich amorphous ribbons were laser-cut to build a stator for a small demonstrator permanent-magnet machine. The motor was tested up to ~30,000 rpm. Finite-element analyses proved that the iron losses of the Co-rich amorphous stator were ~80% smaller than for a Si steel stator in the same motor, at 18,000 rpm (equivalent to an electric frequency of 2.1 kHz). These low-loss soft magnets have great potential for application in highly efficient high-speed electric machines, leading to size reduction as well as reduction or replacement of rare earths in permanent-magnet motors. More studies evaluating further processing techniques for amorphous and nanocomposite materials are needed.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

The artificial leaf.

PubMed

Nocera, Daniel G

2012-05-15

To convert the energy of sunlight into chemical energy, the leaf splits water via the photosynthetic process to produce molecular oxygen and hydrogen, which is in a form of separated protons and electrons. The primary steps of natural photosynthesis involve the absorption of sunlight and its conversion into spatially separated electron-hole pairs. The holes of this wireless current are captured by the oxygen evolving complex (OEC) of photosystem II (PSII) to oxidize water to oxygen. The electrons and protons produced as a byproduct of the OEC reaction are captured by ferrodoxin of photosystem I. With the aid of ferrodoxin-NADP(+) reductase, they are used to produce hydrogen in the form of NADPH. For a synthetic material to realize the solar energy conversion function of the leaf, the light-absorbing material must capture a solar photon to generate a wireless current that is harnessed by catalysts, which drive the four electron/hole fuel-forming water-splitting reaction under benign conditions and under 1 sun (100 mW/cm(2)) illumination. This Account describes the construction of an artificial leaf comprising earth-abundant elements by interfacing a triple junction, amorphous silicon photovoltaic with hydrogen- and oxygen-evolving catalysts made from a ternary alloy (NiMoZn) and a cobalt-phosphate cluster (Co-OEC), respectively. The latter captures the structural and functional attributes of the PSII-OEC. Similar to the PSII-OEC, the Co-OEC self-assembles upon oxidation of an earth-abundant metal ion from 2+ to 3+, may operate in natural water at room temperature, and is self-healing. The Co-OEC also activates H(2)O by a proton-coupled electron transfer mechanism in which the Co-OEC is increased by four hole equivalents akin to the S-state pumping of the Kok cycle of PSII. X-ray absorption spectroscopy studies have established that the Co-OEC is a structural relative of Mn(3)CaO(4)-Mn cubane of the PSII-OEC, where Co replaces Mn and the cubane is extended in a corner-sharing, head-to-tail dimer. The ability to perform the oxygen-evolving reaction in water at neutral or near-neutral conditions has several consequences for the construction of the artificial leaf. The NiMoZn alloy may be used in place of Pt to generate hydrogen. To stabilize silicon in water, its surface is coated with a conducting metal oxide onto which the Co-OEC may be deposited. The net result is that immersing a triple-junction Si wafer coated with NiMoZn and Co-OEC in water and holding it up to sunlight can effect direct solar energy conversion via water splitting. By constructing a simple, stand-alone device composed of earth-abundant materials, the artificial leaf provides a means for an inexpensive and highly distributed solar-to-fuels system that employs low-cost systems engineering and manufacturing. Through this type of system, solar energy can become a viable energy supply to those in the non-legacy world.

TEM study of compact Type A Ca,Al-rich inclusions from CV3 chondrites: Clues to their origin

NASA Astrophysics Data System (ADS)

Greshake, Ansgar; Bischoff, Addi; Putnis, Andrew

1998-01-01

A transmission electron microscope study of three coarse-grained Type A Ca,Al-rich inclusions (CAIs) from Allende, Acfer 082 and Acfer 086 (all CV3 chondrites) was performed in order to decipher their origin and effects of possible metamorphism. The constituent minerals of the CAIs are found to exhibit very similar microstructural characteristics in each of the inclusions studied. In general, the minerals show a well-developed equilibrium texture with typical 120 triple junctions. Melilites are clearly considerably strained and characterized by high dislocation densities up to 3 x 1011 cm-2. The dislocations have Burgers vectors of [001], [110] or [011] and often form subgrain boundaries subparallel {100}. Melilite in the Allende CAI additionally contains thin amorphous lamellae mostly oriented parallel to {001}. Fassaite (Al-Ti-diopside) is almost featureless even on the TEM scale. Only a few sub-planar dislocation walls composed of dislocations with Burgers vectors [001] and 1/2 [110] were detected. Although enclosed within the highly strained melilites, the euhedral spinels contain only low dislocation densities (<2 x 104 cm-2). In the Allende CAI, spinels were found twinned on {111}. Perovskite is also characterized by a low number of linear lattice defects. All grains possess orthorhombic symmetry and are commonly twinned according to a 90 rotation around [101]. Many crystals exhibit typical domain structures as well as curved twin walls where two orthogonal sets intersect. In addition to the mineral phases described above, tiny inclusions of the simple oxides CaO and TiO2 were found within melilite (CaO), spinel (CaO, TiO2) and perovskite (CaO, TiO2). Based on these observations it is assumed that at the beginning of the formation of the CAIs a condensed solid precursor was present. Euhedral spinels poikilitically enclosed within melilites suggest that this solid aggregate was then molten. If the pure oxides represent relict condensates, their presence proves that this melting was incomplete. While still plastic, the CAIs were shocked by micro-impacts causing the high dislocation densities in melilite as well as diaplectic melilite glass and twinned spinels in the Allende CAI. In Acfer 082 and 086 the deformation took place at elevated temperatures, preventing the solid phase transition and mechanical twinning. The absence of linear lattice defects in spinel, fassaite and perovskite most probably reflects inhomogeneous pressure distribution in the polycrystalline CAI as well as the different strengths of the minerals. According to cooling-rate experiments on perovskite by Keller and Buseck (1994), the dominating (101) twins in the CAI perovskites point to cooling rates (50 C/min. Finally, after crystallization of the CAI was complete, mild thermal metamorphism caused the formation of subgrain boundaries, 120 triple junctions and chemical homogenization of the melilites.

TRPV2 expression in rat oral mucosa.

PubMed

Shimohira, Daiji; Kido, Mizuho A; Danjo, Atsushi; Takao, Tomoka; Wang, Bing; Zhang, Jing-Qi; Yamaza, Takayoshi; Masuko, Sadahiko; Goto, Masaaki; Tanaka, Teruo

2009-10-01

The oral mucosa is a highly specialised, stratified epithelium that confers protection from infection and physical, chemical and thermal stimuli. The non-keratinised junctional epithelium surrounds each tooth like a collar and is easily attacked by foreign substances from the oral sulcus. We found that TRPV2, a temperature-gated channel, is highly expressed in junctional epithelial cells, but not in oral sulcular epithelial cells or oral epithelial cells. Dual or triple immunolabelling with immunocompetent cell markers also revealed TRPV2 expression in Langerhans cells and in dendritic cells and macrophages. Electron microscopy disclosed TRPV2 immunoreactivity in the unmyelinated and thinly myelinated axons within the connective tissue underlying the epithelium. TRPV2 labelling was also observed in venule endothelial cells. The electron-dense immunoreaction in junctional epithelial cells, macrophages and neural axons occurred on the plasma membrane, on invaginations of the plasma membrane and in vesicular structures. Because TRPV2 has been shown to respond to temperature, hypotonicity and mechanical stimuli, gingival cells expressing TRPV2 may act as sensor cells, detecting changes in the physical and chemical environment, and may play a role in subsequent defence mechanisms.

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

Covalently Bonded Three-Dimensional Carbon Nanotube Solids via Boron Induced Nanojunctions

DTIC Science & Technology

2012-04-13

Novel Carbon Morphologies: From Covalent Y-Junctions to Sea - Urchin -Like Structures. Adv. Func. Mater. 19, 1193–1199 (2009). 15. Sumpter, B. G. et al...amorphous carbon as depicted from SEM (Fig. 1c). The X-ray powder diffraction pattern shows that as-produced CBXMWNT sponges are indeed crystalline and...material as-produced; (b) shows photograph of the flexibility and mechanical stablility upon bending the sample (a) by hand; (c) SEM image after ion

Design and Development of the Space Technology 5 (ST5) Solar Arrays

NASA Technical Reports Server (NTRS)

Lyons, John; Fatemi, Navid; Gamica, Robert; Sharma, Surya; Senft, Donna; Maybery, Clay

2005-01-01

The National Aeronautics and Space Administration's (NASA's) Space Technology 5 (ST5) is designed to flight-test the concept of miniaturized 'small size" satellites and innovative technologies in Earth's magnetosphere. Three satellites will map the intensity and direction of the magnetic fields within the inner magnetosphere. Due to the small area available for the solar arrays, and to meet the mission power requirements, very high-efficiency multijunction solar cells were selected to power the spacecraft built by NASA Goddard Space Flight Center (GSFC). This was done in partnership with the Air Force Research Lab (AFRL) through the Dual-Use Science and Technology (DUS&T) program. Emcore's InGaP/lnGaAs/Ge Advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of 28.0% (one-sun, 28 C), were used to populate the arrays. Each spacecraft employs 8 identical solar panels (total area of about 0.3 square meters), with 15 large-area solar cells per panel. The requirement for power is to support on-orbit average load of 13.5 W at 8.4 V, with plus or minus 5% off pointing. The details of the solar array design, development and qualification considerations, as well as ground electrical performance & shadowing analysis results are presented.

Amorphous carbon for photovoltaics

NASA Astrophysics Data System (ADS)

Risplendi, Francesca; Grossman, Jeffrey C.

2015-03-01

All-carbon solar cells have attracted attention as candidates for innovative photovoltaic devices. Carbon-based materials such as graphene, carbon nanotubes (CNT) and amorphous carbon (aC) have the potential to present physical properties comparable to those of silicon-based materials with advantages such as low cost and higher thermal stability.In particular a-C structures are promising systems in which both sp2 and sp3 hybridization coordination are present in different proportions depending on the specific density, providing the possibility of tuning their optoelectronic properties and achieving comparable sunlight absorption to aSi. In this work we employ density functional theory to design suitable device architectures, such as bulk heterojunctions (BHJ) or pn junctions, consisting of a-C as the active layer material.Regarding BHJ, we study interfaces between aC and C nanostructures (such as CNT and fullerene) to relate their optoelectronic properties to the stoichiometry of aC. We demonstrate that the energy alignment between the a-C mobility edges and the occupied and unoccupied states of the CNT or C60 can be widely tuned by varying the aC density to obtain a type II interface.To employ aC in pn junctions we analyze the p- and n-type doping of a-C focusingon an evaluation of the Fermi level and work function dependence on doping.Our results highlight promising features of aC as the active layer material of thin-film solar cells.

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be appliedmore » to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.« less

Gravity study of the Central African Rift system: A model of continental disruption 1. The Ngaoundere and Abu Gabra Rifts

NASA Astrophysics Data System (ADS)

Browne, S. E.; Fairhead, J. D.

1983-05-01

A regional compilation of published and unpublished gravity data for Central Africa is presented and reveals the presence of a major rift system, called here, the Central African Rift System. It is proposed that the junction area between the Ngaoundere and Abu Gabra rift arms in Western Sudan forms an incipient intraplate, triple-junction with the as yet unfractured, but domally uplifted and volcanically active, Darfur swell. It is only the Darfur swell that shows any similarities to the uplift and rift history of East Africa. The other two rifts arms are considered to be structurally similar to the early stages of passive margin development and thus reflect more closely the initial processes of continental fragmentation than the structures associated with rifting in East Africa.

Near-field fluorescence thermometry using highly efficient triple-tapered near-field optical fiber probe.

PubMed

Fujii, T; Taguchi, Y; Saiki, T; Nagasaka, Y

2012-12-01

A novel local temperature measurement method using fluorescence near-field optics thermal nanoscopy (Fluor-NOTN) has been developed. Fluor-NOTN enables nanoscale temperature measurement in situ by detecting the temperature-dependent fluorescence lifetime of CdSe quantum dots (QDs). In this paper, we report a novel triple-tapered near-field optical fiber probe that can increase the temperature measurement sensitivity of Fluor-NOTN. The performance of the proposed probe was numerically evaluated by the finite difference time domain method. Due to improvements in both the throughput and collection efficiency of near-field light, the sensitivity of the proposed probe was 1.9 times greater than that of typical double-tapered probe. The proposed shape of the triple-tapered core was successfully fabricated utilizing a geometrical model. The detected signal intensity of dried layers of QDs was greater by more than two orders than that of auto-fluorescence from the fiber core. In addition, the near-field fluorescence lifetime of the QDs and its temperature dependence were successfully measured by the fabricated triple-tapered near-field optical fiber probe. These measurement results verified the capability of the proposed triple-tapered near-field optical fiber probe to improve the collection efficiency of near-field fluorescence.

Efficient encoding of motion is mediated by gap junctions in the fly visual system.

PubMed

Wang, Siwei; Borst, Alexander; Zaslavsky, Noga; Tishby, Naftali; Segev, Idan

2017-12-01

Understanding the computational implications of specific synaptic connectivity patterns is a fundamental goal in neuroscience. In particular, the computational role of ubiquitous electrical synapses operating via gap junctions remains elusive. In the fly visual system, the cells in the vertical-system network, which play a key role in visual processing, primarily connect to each other via axonal gap junctions. This network therefore provides a unique opportunity to explore the functional role of gap junctions in sensory information processing. Our information theoretical analysis of a realistic VS network model shows that within 10 ms following the onset of the visual input, the presence of axonal gap junctions enables the VS system to efficiently encode the axis of rotation, θ, of the fly's ego motion. This encoding efficiency, measured in bits, is near-optimal with respect to the physical limits of performance determined by the statistical structure of the visual input itself. The VS network is known to be connected to downstream pathways via a subset of triplets of the vertical system cells; we found that because of the axonal gap junctions, the efficiency of this subpopulation in encoding θ is superior to that of the whole vertical system network and is robust to a wide range of signal to noise ratios. We further demonstrate that this efficient encoding of motion by this subpopulation is necessary for the fly's visually guided behavior, such as banked turns in evasive maneuvers. Because gap junctions are formed among the axons of the vertical system cells, they only impact the system's readout, while maintaining the dendritic input intact, suggesting that the computational principles implemented by neural circuitries may be much richer than previously appreciated based on point neuron models. Our study provides new insights as to how specific network connectivity leads to efficient encoding of sensory stimuli.

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ringel, Steven

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of ourmore » recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first high performance GaAsP/Si double junction cell, the demonstration of a new method that allow for rapid, quantitative and non-destructive characterization of dislocations (ECCI-electron channeling contrast imaging), the first observation, explanation and solution of the now commonly reported lifetime degradation and recovery phenomena in III-V/Si MOCVD growth, the first demonstration of a high performance SiGe cell with a bandgap of 0.9 eV, amongst other highlights. The impact of the program on the international community has been significant. At the start of our FPACE1 project and for the immediate prior years, 1-2 conference papers/annually were presented at IEEE PVSC. Once FPACE1 commenced in 2011, related efforts sprouted across the US, Europe and Asia and by 2015 there were 26 papers presented on III-V/Si multijunctions in the 2015 PVSC, demonstrating the excitement that was stimulated by the results of this FPACE1 effort.« less

NREL and CSEM Jointly Set New Efficiency Record with Dual-Junction Solar

Science.gov Websites

converting non-concentrated (1-sun) sunlight into electricity using a dual-junction III-V/Si solar cell. The 29.8 percent one-sun efficiency," which details the steps taken to break the previous record. His

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Ionic polymer-metal composite actuators based on triple-layered polyelectrolytes composed of individually functionalized layers.

PubMed

Lee, Jang-Woo; Yoo, Young-Tai; Lee, Jae Yeol

2014-01-22

Ionic polymer-metal composite (IPMC) actuators based on two types of triple-layered Nafion composite membranes were prepared via consecutive solution recasting and electroless plating methods. The triple-layered membranes are composed of a Nafion layer containing an amphiphilic organic molecule (10-camphorsulfonic acid; CSA) in the middle section (for fast and large ion conduction) and two Nafion/modified inorganic composite layers in the outer sections (for large accumulation/retention of mobile ions). For construction of the two types of IPMCs, sulfonated montmorillonite (MMT) and polypyrrole (PPy)-coated alumina fillers were incorporated into the outer layers. Both the triple-layered IPMCs exhibited 42% higher tip displacements at the maximum deflections with a negligible back-relaxation, 50-74% higher blocking forces, and more rapid responses under 3 V dc, compared with conventional single-layered Nafion-IPMCs. Improvements in cyclic displacement under a rectangular voltage input of 3 V at 1 Hz were also made in the triple-layered configurations. Compared with single-layered IPMCs consisting of the identical compositions with the respective outer composite layers, the bending rates and energy efficiencies of both the triple-layered IPMCs were significantly higher, although the blocking forces were a bit lower. These remarkable improvements were attributed to higher capacitances and Young's moduli as well as a more efficient transport of mobile ions and water through the middle layer (Nafion/CSA) and a larger accumulation/retention of the mobile species in the outer functionalized inorganic composite layers. Especially, the triple-layered IPMC with the PPy-modified alumina registered the best actuation performance among all the samples, including a viable actuation even at a low voltage of 1.5 V due to involving efficient redox reactions of PPy with the aid of hygroscopic alumina.

Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

NASA Astrophysics Data System (ADS)

Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

2016-07-01

We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

Solar energy converters based on multi-junction photoemission solar cells.

PubMed

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB acrossmore » a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit.« less

Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

PubMed

Xu, Kaikai

2013-09-20

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

The U.S. and Japanese amorphous silicon technology programs A comparison

NASA Technical Reports Server (NTRS)

Shimada, K.

1984-01-01

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.; Geissbuehler, J.; Loper, P.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

Pulling the rug out from under California: Seismic images of the Mendocino Triple Junction region

USGS Publications Warehouse

Tréhu, Anne M.

1995-01-01

In 1993 and 1994 a network of large-aperture seismic profiles was collected to image the crustal and upper-mantle structure beneath northern California and the adjacent continental margin. The data include approximately 650 km of onshore seismic refraction/reflection data, 2000 km of off-shore multichannel seismic (MCS) reflection data, and simultaneous onshore and offshore recording of the MCS airgun source to yield large-aperture data. Scientists from more than 12 institutions were involved in data acquisition.

Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2018-04-01

In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Sputtered pin amorphous silicon semi-conductor device and method therefor

DOEpatents

Moustakas, Theodore D.; Friedman, Robert A.

1983-11-22

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaofang; Tang, Chaowan; Zheng, Qun

Loading cocatalyst on semiconductors was crucially necessary for improving the photocatalytic hydrogen evolution. Amorphous MoS{sub x} as a novel and noble metal-free cocatalyst was loaded on CdS nanorods by a simple photodeposition method. Efficient hydrogen evolution with amount of 15 mmol h{sup −1} g{sup −1} was observed over the MoS{sub x} modified CdS nanorods, which was about 6 times higher than that by using Pt as cocatalyst. Meanwhile, with MoS{sub x} cocatalyst, the efficiency of CdS nanorods was superior to that of CdS nanoparticles and bulk CdS. No deactivation could be observed in the efficiency of MoS{sub x} modified CdSmore » nanorods under irradiation for successive 10 h. Further experimental results indicated that the efficient electrons transfer, low overpotential of hydrogen evolution and active S atoms over the MoS{sub x} modified CdS nanorods were responsible for the higher efficiency. Our results provided guidance for synthesizing noble metal-free materials as cocatalyst for photocatalytic hydrogen evolution. - Graphical abstract: Photodeposition of amorphous MoS{sub x} on CdS nanorods for highly efficient photocatalytic hydrogen evolution. - Highlights: • Amorphous MoSx cocatalyst was loaded on CdS NRs by a simple photodeposition. • MoS{sub x}/CdS NRs exhibited 6 times higher hydrogen evolution efficiency than Pt/CdS NRs. • The hydrogen evolution of MoS{sub x}/CdS NRs linearly increased with prolonging time. • Lower overpotential and efficient electron transfer were observed over MoS{sub x}/CdS NRs.« less

The Global Precipitation Measurement (GPM) Spacecraft Power System Design and Orbital Performance

NASA Technical Reports Server (NTRS)

Dakermanji, George; Burns, Michael; Lee, Leonine; Lyons, John; Kim, David; Spitzer, Thomas; Kercheval, Bradford

2016-01-01

The Global Precipitation Measurement (GPM) spacecraft was jointly developed by National Aeronautics and Space Administration (NASA) and Japan Aerospace Exploration Agency (JAXA). It is a Low Earth Orbit (LEO) spacecraft launched on February 27, 2014. The spacecraft is in a circular 400 Km altitude, 65 degrees inclination nadir pointing orbit with a three year basic mission life. The solar array consists of two sun tracking wings with cable wraps. The panels are populated with triple junction cells of nominal 29.5% efficiency. One axis is canted by 52 degrees to provide power to the spacecraft at high beta angles. The power system is a Direct Energy Transfer (DET) system designed to support 1950 Watts orbit average power. The batteries use SONY 18650HC cells and consist of three 8s x 84p batteries operated in parallel as a single battery. The paper describes the power system design details, its performance to date and the lithium ion battery model that was developed for use in the energy balance analysis and is being used to predict the on-orbit health of the battery.

Comparative study of MYSat attitude stability effect on power generation and lifetime

NASA Astrophysics Data System (ADS)

Amilia Ismail, Norilmi; Thaheer, Ahmad Shaqeer Mohamed; Izmir Yamin, Mohd.

2018-05-01

Universiti Sains Malaysia Space System Lab (USSL) is currently developing a 1U cubesat named MYSat. The satellite mission is to measure electron-density in the Ionosphere E-Layer. Power generation from a solar panel is limited due to a small area of the satellite. Apart from that, the satellite is expecting to continuously spinning and tumbling throughout the mission lifetime as the satellite will be launched without an attitude control system. This paper compares the effect on power generation and the lifetime of MYSat of two conditions; first is with attitude controll where satellite pointing to nadir and later is uncontrol attitude of the satellite. The analysis has been conducted using Analytical Graphics, Inc. (AGI) Systems Tool Kit (STK) software. This study assumed the satellite used a hexagonal solar cell with a theoretical efficiency of 29% identical to an Ultra Triple-Junction (UTJ) solar cell. The simulation is done in one year duration on different attitude configuration. The worst-case condition, where the Earth is positioned at apogee, has been chosen for the comparative study and the lifetime of the satellite is also simulated and compared.

Si/Ge Junctions Formed by Nanomembrane Bonding

DTIC Science & Technology

2011-01-01

hydrophobic bonding of a 200 nm thick 14. ABSTRACT monocrystalline Si(001) membrane to a bulk Ge(001) wafer. The membrane bond has an extremely high...temperature hydrophobic bonding of a 200 nm thick monocrystalline Si(001) membrane to a bulk Ge(001) wafer. The membrane bond has an extremely high quality...them. A RTIC LE KIEFER ET AL. VOL. 5 ’ NO. 2 ’ 1179–1189 ’ 2011 1182 www.acsnano.org monocrystalline . The interfacial region appears to be amorphous

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Development of an amorphous selenium based photoconductor and its application in a high-sensitivity photodetector (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Ebisudani, Taishi; Ochiai, Jun; Saito, Ichitaro; Yamada, Takatoshi; Chua, Daniel H. C.; Mimura, Hidenori; Okano, Ken

2016-09-01

Although present imaging devices are mostly silicon-based devices such as CMOS and CCD, these devices are reaching their sensitivity limit due to the band gap of silicon. Amorphous selenium (a-Se) is a promising candidate for high- sensitivity photo imaging devices, because of its low thermal noise, high spatial resolution, as well as adaptability to wide-area deposition. In addition, internal signal amplification is reported on a-Se based photodetectors, which enables a photodetector having effective quantum efficiency over 100 % against visible light. Since a-Se has sensitivity to UV and soft X-rays, the reported internal signal amplification should be applicable to UV and X-ray detection. However, application of the internal signal amplification required high voltage, which caused unexpected breakdown at the contact or thin-film transistor-based signal read-out. For this reason, vacuum devices having electron-beam read-out is proposed. The advantages of vacuum-type devices are vacuum insulation and its extremely low dark current. In this study, we present recent progresses in developing a-Se based photoconductive films and photodetector using nitrogen-doped diamond electron beam source as signal read-out. A novel electrochemical method is used to dope impurities into a-Se, turning the material from weak p-type to n-type. A p-n junction is formed within a-Se photoconductive film, which has increased the sensitivity of a-Se based photodetector. Our result suggests a possibility of high sensitivity photodetector that can potentially break the limit of silicon-based devices.

Ultralight monolithic photovoltaic modules of amorphous silicon alloys

NASA Astrophysics Data System (ADS)

Hanak, J. J.

A process has been developed for fabrication of roll-up, monolithic, photovoltaic (PV) modules made of amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin, or metal coated with insulators. They have the following characteristics: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns, power-to-weight and power-to-volume ratios at AM1, 2.4 kW/kg and 6.5 MW/cu m, respectively. Cells of a-Si alloys are up to 100 times as tolerant to irradiation with 1 MeV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact, and attractive for terrestrial and aerospace applications.

Ultralight amorphous silicon alloy photovoltaic modules for space and terrestrial applications

NASA Astrophysics Data System (ADS)

Hanak, J. J.; Fulton, C.; Myatt, A.; Nath, P.; Woodyard, J. R.

This paper gives a review and an update on recently developed ultralight photovoltaic modules based on amorphous silicon (a-Si) alloys. They consist of tandem-junction solar cells deposited by a continuous, roll-to-roll process onto thin, foil substrates of bare metal, high temperature resin or metal coated with insulators. They have the following features: size, up to 71 cm x 30.5 cm; total thickness, 8 to 50 microns; power-to-weight at AM1, 2.4 kW/kg; and power-to-volume ratio 6.5 MW/cu m. Cells of a-Si alloys are over 50 times more tolerant to irradiation with 1 MeV and with 200 keV protons than crystalline cells and the damage is easily annealable. The modules have high power density and stability, they are portable, stowable, deployable, retractable, tolerant to radiation and meteorite or projectile impact and attractive for terrestrial and aerospace applications.

A Comment on the Dependence of LED's Efficiency on the Junction Ideality Factor

ERIC Educational Resources Information Center

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-01-01

P-n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed.…

Large thermoelectric efficiency of doped polythiophene junction: A density functional study

NASA Astrophysics Data System (ADS)

Golsanamlou, Zahra; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

2018-06-01

The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.

Electron-beam-induced information storage in hydrogenated amorphous silicon devices

DOEpatents

Yacobi, B.G.

1985-03-18

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

Development of novel self-healing and antibacterial dental composite containing calcium phosphate nanoparticles

PubMed Central

Wu, Junling; Weir, Michael D.; Melo, Mary Anne S.; Xu, Hockin H. K.

2015-01-01

Objectives Fracture and secondary caries are the primary reasons for dental restoration failure. The objective of this study was to develop a self-healing composite to heal cracks, while containing dimethylaminohexadecyl methacrylate (DMAHDM) for antibacterial function and nanoparticles of amorphous calcium phosphate (NACP) for remineralization. Methods Microcapsules were synthesized with poly(urea-formaldehyde) (PUF) shells containing triethylene glycol dimethacrylate (TEGDMA) and N,N-dihydroxyethyl-p-toluidine (DHEPT) as healing liquid. Composite contained 20 mass% of NACP and 35% glass fillers. In addition, composite contained 0%, 2.5%, 5%, 7.5%, or 10% of microcapsules. A single edge V-notched beam method measured fracture toughness (KIC) and self-healing efficiency. A dental plaque microcosm biofilm model was used to test the antibacterial properties. Results Incorporation of microcapsules up to 7.5% into the composite did not adversely affect the mechanical properties (p > 0.1). Successful self-healing was achieved, with KIC recovery of 65–81% (mean ± sd; n = 6) to regain the load-bearing capability after composite fracture. The self-healing DMAHDM-NACP composite displayed a strong antibacterial potency, inhibiting biofilm viability and lactic acid production, and reducing colony-forming units by 3–4 orders of magnitude, compared to control composite without DMAHDM. Conclusions A dental composite was developed with triple benefits of self-healing after fracture, antibacterial activity, and remineralization capability for the first time. Clinical significance The self-healing, antibacterial and remineralizing composite may be promising for tooth cavity restorations to combat bulk fracture and secondary caries. The method of using triple agents (self-healing microcapsules, DMAHDM, and NACP) may have wide applicability to other dental composites, adhesives, sealants and cements. PMID:25625674

Cell chip temperature measurements in different operation regimes of HCPV modules

NASA Astrophysics Data System (ADS)

Rumyantsev, V. D.; Chekalin, A. V.; Davidyuk, N. Yu.; Malevskiy, D. A.; Pokrovskiy, P. V.; Sadchikov, N. A.; Pan'chak, A. N.

2013-09-01

A new method has been developed for accurate measurements of the solar cell temperature in maximum power point (MPP) operation regime in comparison with that in open circuit (OC) regime (TMPP and TOC). For this, an electronic circuit has been elaborated for fast variation of the cell load conditions and for voltage measurements, so that VOC values could serve as an indicator of TMPP at the first moment after the load disconnection. The method was verified in indoor investigations of the single-junction AlGaAs/GaAs cells under CW laser irradiation, where different modifications of the heat spreaders were involved. PV modules of the "SMALFOC" design (Small-size concentrators; Multijunction cells; "All-glass" structure; Lamination technology; Fresnel Optics for Concentration) with triple-junction InGaP/GaAs/Ge cells were examined outdoors to evaluate temperature regimes of their operation.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

NASA Astrophysics Data System (ADS)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; Friedman, Daniel J.; France, Ryan M.; Perl, Emmett E.; Norman, Andrew G.; Guthrey, Harvey L.; Steiner, Myles A.

2018-01-01

Photovoltaic conversion efficiencies of 32.6 ± 1.4% under the AM1.5 G173 global spectrum, and 35.5% ± 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (˜1.86/1.41 eV) solar cells. The challenge of growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ˜1 × 106 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ˜0.39 V.

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE PAGES

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.; ...

2018-01-29

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Schulte, Kevin L.; Geisz, John F.

Photovoltaic conversion efficiencies of 32.6 +/- 1.4% under the AM1.5 G173 global spectrum, and 35.5 +/- 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a metamorphic 1.1 eV GaInAs junction grown on a transparent, compositionally graded metamorphic AlGaInAs buffer. This bandgap combination is much closer to the dual-junction optimum and offers headroom for absolute 3% improvement in efficiency, in comparison to the incumbent lattice-matched GaInP/GaAs (~1.86/1.41 eV) solar cells. The challenge ofmore » growing a high-quality 1.7 eV GaInAsP solar cell is the propensity for phase separation in the GaInAsP alloy. The challenge of lattice-mismatched GaInAs solar cell growth is that it requires minimizing the residual dislocation density during the growth of a transparent compositionally graded buffer to enable efficient metamorphic tandem cell integration. Transmission electron microscopy reveals relatively weak composition fluctuation present in the 1.7 eV GaInAsP alloy, attained through growth control. The threading dislocation density of the GaInAs junction is ~1 x 10^6 cm-2, as determined from cathodoluminescence measurements, highlighting the quality of the graded buffer. These material advances have enabled the performance of both junctions to reach over 80% of their Shockley-Queisser limiting efficiencies, with both the subcells demonstrating a bandgap-voltage offset, WOC (=Eg/q-VOC), of ~0.39 V.« less

Deletion of the α-(1,3)-Glucan Synthase Genes Induces a Restructuring of the Conidial Cell Wall Responsible for the Avirulence of Aspergillus fumigatus

PubMed Central

Beauvais, Anne; Bozza, Silvia; Kniemeyer, Olaf; Formosa, Céline; Balloy, Viviane; Henry, Christine; Roberson, Robert W.; Dague, Etienne; Chignard, Michel; Brakhage, Axel A.; Romani, Luigina; Latgé, Jean-Paul

2013-01-01

α-(1,3)-Glucan is a major component of the cell wall of Aspergillus fumigatus, an opportunistic human fungal pathogen. There are three genes (AGS1, AGS2 and AGS3) controlling the biosynthesis of α-(1,3)-glucan in this fungal species. Deletion of all the three AGS genes resulted in a triple mutant that was devoid of α-(1,3)-glucan in its cell wall; however, its growth and germination was identical to that of the parental strain in vitro. In the experimental murine aspergillosis model, this mutant was less pathogenic than the parental strain. The AGS deletion resulted in an extensive structural modification of the conidial cell wall, especially conidial surface where the rodlet layer was covered by an amorphous glycoprotein matrix. This surface modification was responsible for viability reduction of conidia in vivo, which explains decrease in the virulence of triple agsΔ mutant. PMID:24244155

Triple modifier effect on physical, optical and structural properties of boro tellurite zinc lithium glasses

NASA Astrophysics Data System (ADS)

Naresh, P.; Srinivasu, D.; Narsimlu, N.; Ch. Srinivas, Kavitha, B.; Deshpandhe, Uday; Kumar, K. Siva

2018-05-01

To investigate physical, optical and structural properties of glass samples of the Quaternary system (60-x)B2O3-xTeO2-10ZnO-30Li2O with x=0,5,10,15, and 20 mol% were prepared by conventional melt quenching technique. XRD confirmed the amorphous nature of all samples. Physical parameters like density, molar volume, Oxygen packing density and etc. calculated. Density of glass samples increased with the increase of TeO2 concentration due to the replacement of lighter B2O3 with heavier TeO2. Optical properties has studied with the help of UV-Visible spectra. Cut off wavelength is increases whereas Eopt and Urbache energies is decreased except intermediate mole fraction of TeO2 at which the triple modifier effect can be observed. Fourier Transform Infrared spectroscopy reveals that the network consists of TeO3 and TeO6 structural units along with BO3 and BO4 units.

Volcano-tectonic evolution of a linear volcanic ridge (Pico-Faial Ridge, Azores Triple Junction) assessed by paleomagnetic studies

NASA Astrophysics Data System (ADS)

Silva, Pedro F.; Henry, Bernard; Marques, Fernando O.; Hildenbrand, Anthony; Lopes, Ana; Madureira, Pedro; Madeira, José; Nunes, João C.; Roxerová, Zuzana

2018-02-01

The morphology of volcanic oceanic islands results from the interplay between constructive and destructive processes, and tectonics. In this study, the analysis of the paleomagnetic directions obtained on well-dated volcanic rocks is used as a tool to assess tilting related to tectonics and large-scale volcano instability along the Pico-Faial linear volcanic ridge (Azores Triple Junction, Central-North Atlantic). For this purpose, 530 specimens from 46 lava flows and one dyke from Pico and Faial islands were submitted to thermal and alternating magnetic fields demagnetizations. Detailed rock magnetic analyses, including thermomagnetic analyses and classical high magnetic field experiments revealed titanomagnetites with different Ti-content as the primary magnetic carrier, capable of recording stable remanent magnetizations. In both islands, the paleomagnetic analysis yields a Characteristic Remanent Magnetization, which presents island mean direction with normal and reversed polarities in agreement with the islands location and the age of the studied lava flows, indicating a primary thermo-remanent magnetization. Field observations and paleomagnetic data show that lava flows were emplaced on pre-existing slopes and were later affected by significant tilting. In Faial Island, magmatic inflation and normal faults making up an island-scale graben, can be responsible for the tilting. In Pico Island, inflation related to magma intrusion during flow emplacement can be at the origin of the inferred tilting, whereas gradual downward movement of the SE flank by slumping processes appears mostly translational.

He and Sr isotopic constraints on subduction contributions to Woodlark Basin volcanism, Solomon Islands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trull, T.W.; Kurz, M.D.; Perfit, M.R.

In order to assess the nature and spatial extent of subduction contributions to arc volcanism, Sr and He isotopic compositions are measured for dredged volcanic rocks from the Woodlark Basin in the western Pacific. {sup 87}Sr/{sup 86}Sr ratios increase geographically, from ocean ridge values (.7025-.7029) at the Woodlark Spreading Center to island arc ratios (.7035-.7039) in the Solomon Islands forearc, with intermediate values near the triple junction where the Woodlark Spreading Center subducts beneath the Solomon Islands. {sup 3}He/{sup 4}He ratios are also more radiogenic in the forearc (6.9 {plus minus} .2 R{sub a} at active Kavachi volcano) than alongmore » the spreading center, where values typical of major ocean ridges were found (8.2 - 9.3 R{sub a}). Very low {sup 3}He/{sup 4}He ratios occur in many triple junction rocks (.1 to 5 R{sub a}), but consideration of He isotopic differences between crushing and melting analyses suggests that the low ratios were caused by atmospheric (1 R{sub a}) and radiogenic ({approx} 0.2 R{sub a}) helium addition after eruption. Variations in unaltered, magnetic {sup 3}He/{sup 4}He, and {sup 87}Sr/{sup 86}Sr ratios are best explained by subduction-related fluid or silicate melt contributions to the magma source region, perhaps from ancient Pacific lithosphere. However, mantle volatiles dominate the generation of Woodlark Basin rocks despite extensive subduction in the region.« less

Ridge-trench collision in Archean and Post-Archean crustal growth: Evidence from southern Chile

NASA Technical Reports Server (NTRS)

Nelson, E. P.; Forsythe, R. D.

1988-01-01

The growth of continental crust at convergent plate margins involves both continuous and episodic processes. Ridge-trench collision is one episodic process that can cause significant magmatic and tectonic effects on convergent plate margins. Because the sites of ridge collision (ridge-trench triple junctions) generally migrate along convergent plate boundaries, the effects of ridge collision will be highly diachronous in Andean-type orogenic belts and may not be adequately recognized in the geologic record. The Chile margin triple junction (CMTJ, 46 deg S), where the actively spreading Chile rise is colliding with the sediment-filled Peru-Chile trench, is geometrically and kinematically the simplest modern example of ridge collision. The south Chile margin illustrates the importance of the ridge-collision tectonic setting in crustal evolution at convergent margins. Similarities between ridge-collision features in southern Chile and features of Archean greenstone belts raise the question of the importance of ridge collision in Archean crustal growth. Archean plate tectonic processes were probably different than today; these differences may have affected the nature and importance of ridge collision during Archean crustal growth. In conclusion, it is suggested that smaller plates, greater ridge length, and/or faster spreading all point to the likelihood that ridge collision played a greater role in crustal growth and development of the greenstone-granite terranes during the Archean. However, the effects of modern ridge collision, and the processes involved, are not well enough known to develop specific models for the Archean ridge collison.

Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors.

PubMed

Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

2015-06-10

Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn(2+)-doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film's emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn(2+) to Mn(2+). It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices.

Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors

PubMed Central

Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

2015-01-01

Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn2+ -doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film’s emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn2+ to Mn2+. It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices. PMID:26061744

High efficiency solar cells for concentrator systems: silicon or multi-junction?

NASA Astrophysics Data System (ADS)

Slade, Alexander; Stone, Kenneth W.; Gordon, Robert; Garboushian, Vahan

2005-08-01

Amonix has become the first company to begin production of high concentration silicon solar cells where volumes are over 10 MW/year. Higher volumes are available due to the method of manufacture; Amonix solely uses semiconductor foundries for solar cell production. In the previous years of system and cell field testing, this method of manufacturing enabled Amonix to maintain a very low overhead while incurring a high cost for the solar cell. However, recent simplifications to the solar cell processing sequence resulted in cost reduction and increased yield. This new process has been tested by producing small qualities in very short time periods, enabling a simulation of high volume production. Results have included over 90% wafer yield, up to 100% die yield and world record performance (η =27.3%). This reduction in silicon solar cell cost has increased the required efficiency for multi-junction concentrator solar cells to be competitive / advantageous. Concentrator systems are emerging as a low-cost, high volume option for solar-generated electricity due to the very high utilization of the solar cell, leading to a much lower $/Watt cost of a photovoltaic system. Parallel to this is the onset of alternative solar cell technologies, such as the very high efficiency multi-junction solar cells developed at NREL over the last two decades. The relatively high cost of these type of solar cells has relegated their use to non-terrestrial applications. However, recent advancements in both multi-junction concentrator cell efficiency and their stability under high flux densities has made their large-scale terrestrial deployment significantly more viable. This paper presents Amonix's experience and testing results of both high-efficiency silicon rear-junction solar cells and multi-junction solar cells made for concentrated light operation.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

The effect of amorphous TiO2 in P25 on dye-sensitized solar cell performance.

PubMed

Al-Attafi, Kadhim; Nattestad, Andrew; Wu, Qijie; Ide, Yusuke; Yamauchi, Yusuke; Dou, Shi Xue; Kim, Jung Ho

2018-01-04

P25 is one of the most widely used forms of titanium(iv) oxide (TiO 2 ), routinely utilised in dye-sensitised solar cells (DSCs), where it is often employed as a control, in spite of its poorly defined nature and the typically low device efficiency (or possibly because of this). Work by Park in 2000 and later by Lin et al. suggests that the rutile component might not be to blame for this, as has often been claimed. Recently it has been observed that P25 has quite a sizable amorphous content. A method to selectively remove this non-crystalline material has been developed, allowing for scrutiny of the role this amorphous material plays. Here we compare hydrothermally treated P25 (H-P25) with the as-received material, realizing solar-to-electric conversion efficiencies of 5.3% and 3.2% respectively. More importantly, this reveals important information about the detrimental effect of amorphous TiO 2 on DSC performance, with broader implications, as most researchers do not actively examine their synthesized materials for the presence of an amorphous component.

Tectonomagmatic significance of the picrite-rhyolite volcanism in the Northern Ethiopian plateau area

NASA Astrophysics Data System (ADS)

Natali, Claudio; Beccaluva, Luigi; Bianchini, Gianluca; Siena, Franca

2010-05-01

The Oligocene Continental Flood Basalts (CFB) of the Northern Ethiopia and the conjugate Yemen province testifies a huge volcanic event related to the "Afar plume" occurred at ca. 30 Ma (in 1 Ma or less; Hofmann et al., 1997) prior to the continental rifting stage. The zonal arrangement of CFB lavas with Low-Ti tholeiites (LT) in the west, High-Ti tholeiites (HT1) to the east and very High-Ti transitional basalts and picrites (HT2, TiO2 4-6 wt%) closer to the Afar triple junction has been considered a record of magmas generated from the flanks to the centre of a plume head, currently corresponding to the Afar hotspot (Beccaluva et al., 2009). In the central-eastern part of the plateau (Lalibela area), neighbouring the Afar escarpment, abundant rhyolites characterize the upper part of the volcanic sequence and have been interpreted as the differentiated products of CFB magmas (Ayalew et al., 2006). The unusual association of picrite and rhyolite magmas erupted in an elongated area, parallel to the Afar escarpment, appears to be related to peculiar tectonomagmatic events developed in the apical zone of a stretched lithosphere impinged by a mantle plume. As previously suggested, the HT basaltic and picritic magmas could have been generated in the innermost part (core) of the plume head from the hottest, deepest and most metasomatised mantle domains, enriched by "plume components" (Beccaluva et al., 2009). The late stages of these magmatic events were accompanied by the onset of continental rifting, with faulting and block tilting, leading to favourable conditions for magma differentiation in shallow (crustal) chambers located N-S along the future Afar Escarpment. Quantitative petrological modelling shows that efficient fractional crystallization processes of HT transitional basaltic magmas could result in highly differentiated peralkaline rhyolitic products, generally localized at the top (lower density) of the magma reservoirs. From these latter, abundant rhyolitic magma were erupted (sometimes alternating to HT basalts and picrites) during the paroxystic extensional phases which ultimately led to continental break-up and the formation of the Red Sea-Gulf of Aden-East African rift system centred in the Afar "triple junction". References: Ayalew et al. (2006). Geol. Soc. London Sp. Pub. 259, 121-130. Beccaluva et al. (2009). J. Petrol. 50, 1377-1403. Hofmann et al. (1997). Nature 389, 838-841.

The angular velocity of Nubia relative to Somalia and the location of the Nubia-Somalia-Antarctica triple junction

NASA Astrophysics Data System (ADS)

Horner-Johnson, Benjamin C.; Gordon, Richard G.; Cowles, Sara M.; Argus, Donald F.

2005-07-01

A new analysis of geologically current plate motion across the Southwest Indian ridge (SWIR) and of the current location of the Nubia-Antarctica-Somalia triple junction is presented. Spreading rates averaged over the past 3.2 Myr are estimated from 103 well-distributed, nearly ridge-perpendicular profiles that cross the SWIR. All available bathymetric data are evaluated to estimate the azimuths and uncertainties of transform faults; six are estimated from multibeam data and 12 from precision depth recorder (PDR) data. If both the Nubian and Somalian component plates are internally rigid near the SWIR and if the Nubia-Somalia boundary is narrow where it intersects the SWIR, that intersection lies between ~26°E and ~32°E. Thus, the boundary is either along the spreading ridge segment just west of the Andrew Bain transform fault complex (ABTFC) or along some of the transform fault complex itself. These limits are narrower than and contained within limits of ~24°E to ~33°E previously found by Lemaux et al. from an analysis of the locations of magnetic anomaly 5. The data are consistent with a narrow boundary, but also consistent with a diffuse boundary as wide as ~700 km. The new Nubia-Somalia pole of rotation lies ~10° north of the Bouvet triple junction, which places it far to the southwest of southern Africa. The new angular velocity determined only from data along the SWIR indicates displacement rates of Somalia relative to Nubia of 3.6 +/- 0.5 mm yr-1 (95 per cent confidence limits) towards 176° (S04° E) between Somalia and Nubia near the SWIR, and of 8.3 +/- 1.9 mm yr-1 (95 per cent confidence limits) towards 121° (S59° E) near Afar. The new Nubia-Somalia angular velocity differs significantly from the Nubia-Somalia angular velocity estimated from Gulf of Aden and Red sea data. This significant difference has three main alternative explanations: (i) that the plate motion data have substantial unmodelled systematic errors, (ii) that the Nubian component plate is not a single rigid plate, or (iii) that the Somalian component plate is not a single rigid plate. We tentatively prefer the third explanation given the geographical distribution of earthquakes within the African composite plate relative to the inferred location of the Nubia-Somalia boundary along the SWIR.

Formation of p-n-p junction with ionic liquid gate in graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Xin; Tang, Ning, E-mail: ntang@pku.edu.cn, E-mail: geweikun@mail.tsinghua.edu.cn, E-mail: bshen@pku.edu.cn; Duan, Junxi

2014-04-07

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

Triple-channel microreactor for biphasic gas-liquid reactions: Photosensitized oxygenations.

PubMed

Maurya, Ram Awatar; Park, Chan Pil; Kim, Dong-Pyo

2011-01-01

A triple-channel microreactor fabricated by means of a soft-lithography technique was devised for efficient biphasic gas-liquid reactions. The excellent performance of the microreactor was demonstrated by carrying out photosensitized oxygenations of α-terpinene, citronellol, and allyl alcohols.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Characterization of Ultra High Temperature Ceramics via Transmission Electron Microscopy. Part 2: UHTCs sintered with addition of TaSi2

DTIC Science & Technology

2010-01-21

substituted by Hf in the TaSi2 phase, indicating that this silicide has a great solubility for the group IV metals . At the triple point junctions Ta5Si3...Mathis Müller for his precious help in TEM specimens’ preparations . FA8655-09-M-4002 40 References 1. L. E. Toth: Transition Metal Carbides and...Transition Metal Disilicides,’ Acta Mater., 44, 3035 (1996). 21. H. Pastor and R. Meyer: An Investigation of the Effect of Additions of Metal Silicides

Biosensing using long-range surface plasmon waveguides

NASA Astrophysics Data System (ADS)

Krupin, Oleksiy; Khodami, Maryam; Fan, Hui; Wong, Wei Ru; Mahamd Adikan, Faisal Rafiq; Berini, Pierre

2017-05-01

Long-range surface plasmon waveguides, and their application to various transducer architectures for amplitude- or phase-sensitive biosensing, are discussed. Straight and Y-junction waveguides are used for direct intensity-based detection, whereas Bragg gratings and single-, dual- and triple-output Mach Zehnder interferometers are used for phasebased detection. In either case, multiple-output biosensors which provide means for referencing are very useful to eliminate common perturbations and drift. Application of the biosensors to disease detection in complex fluids is discussed. Application to biomolecular interaction analysis and kinetics extraction is also discussed.

Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS

DTIC Science & Technology

2012-06-01

circuit voltage can then be calculated from ln 1 Loc t S IV V I        (4.3) where IS is the reverse saturation current, and Vt is the...orbiting electronic equipment. The first orbit of interest is the low Earth orbit ( LEO ). LEO encompasses any orbit within 650 kilometers of the...Light Beams #Solving #Meshing mesh width=200000 #X-Mesh: Surface=500 um2 = 1/200000 cm2 x.mesh loc =-250 spac=50 x.mesh loc =0 spac=10

Preliminary low temperature electron irradiation of triple junction solar cells

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

2005-01-01

JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

Annealing free magnetic tunnel junction sensors

NASA Astrophysics Data System (ADS)

Knudde, S.; Leitao, D. C.; Cardoso, S.; Freitas, P. P.

2017-04-01

Annealing is a major step in the fabrication of magnetic tunnel junctions (MTJs). It sets the exchange bias between the pinned and antiferromagnetic layers, and helps to increase the tunnel magnetoresistance (TMR) in both amorphous and crystalline junctions. Recent research on MTJs has focused on MgO-based structures due to their high TMR. However, the strict process control and mandatory annealing step can limit the scope of the application of these structures as sensors. In this paper, we present AlOx-based MTJs that are produced by ion beam sputtering and remote plasma oxidation and show optimum transport properties with no annealing. The microfabricated devices show TMR values of up to 35% and using NiFe/CoFeB free layers provides tunable linear ranges, leading to coercivity-free linear responses with sensitivities of up to 5.5%/mT. The top-pinned synthetic antiferromagnetic reference shows a stability of about 30 mT in the microfabricated devices. Sensors with linear ranges of up to 60 mT are demonstrated. This paves the way for the integration of MTJ sensors in heat-sensitive applications such as flexible substrates, or for the design of low-footprint on-chip multiaxial sensing devices.

Triple-channel microreactor for biphasic gas–liquid reactions: Photosensitized oxygenations

PubMed Central

Maurya, Ram Awatar; Park, Chan Pil

2011-01-01

Summary A triple-channel microreactor fabricated by means of a soft-lithography technique was devised for efficient biphasic gas–liquid reactions. The excellent performance of the microreactor was demonstrated by carrying out photosensitized oxygenations of α-terpinene, citronellol, and allyl alcohols. PMID:21915221

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Optoelectronic response of a WS2 tubular p-n junction

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Onga, M.; Qin, F.; Shi, W.; Zak, A.; Tenne, R.; Smet, J.; Iwasa, Y.

2018-07-01

Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2012-03-06

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Single P-N junction tandem photovoltaic device

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

2011-10-18

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Tetrahedral bonding in amorphous carbon

NASA Astrophysics Data System (ADS)

McKenzie, D. R.

1996-12-01

Electron configurations close to the tetrahedral 0034-4885/59/12/002/img1 hybridization are found in pure amorphous carbon at a concentration which depends on preparation conditions. Tetrahedral bonding at levels of approximately 80% is found in amorphous carbons formed from beams of carbon ions with energies in a `window' between 20 eV and approximately 500 eV. Suitable techniques for its formation include cathodic arc deposition, ion beam deposition and laser ablation. Similar material appears to be formed by pressure treatment of fullerene precursors and by displacement damage in diamond. Highly tetrahedral forms of amorphous carbon (ta-C) show electronic, optical and mechanical properties which approach those of diamond and are quite different from amorphous carbons with low 0034-4885/59/12/002/img1 content. Useful techniques for determining the 0034-4885/59/12/002/img1 content include electron energy loss spectroscopy, electron and neutron diffraction and Raman spectroscopy. Considerable progress has been made in the understanding of this material by simulating its structure in the computer with a range of techniques from empirical potentials to ab initio quantum mechanics. The structure shows departures from an idealized glassy state of diamond which would have a random tetrahedral network structure as used to describe amorphous silicon and germanium. A surprising feature of the structure simulated using ab initio methods is the presence of small rings containing three or four 0034-4885/59/12/002/img1 carbon atoms. The electronic and optical properties are strongly influenced by the residual of 0034-4885/59/12/002/img5 carbon. Applications to electronic devices are at an early stage with the demonstration of photoconductivity and some simple junction devices. Applications as a wear resistant coating are promising, since the theoretically predicted high values of elastic constants, comparable to but less than those of diamond, are achieved experimentally, together with low friction coefficients.

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE PAGES

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin; ...

2017-07-24

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

In situ evolution of highly dispersed amorphous CoO x clusters for oxygen evolution reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dawei; Dong, Chung-Li; Zou, Yuqin

Electrocatalytic water splitting is a key technique to produce hydrogen fuels, which can be considered as an efficient strategy to store renewable energy. Oxygen evolution reaction (OER) that occurs at the anode side requires a four-electron transfer under highly oxidizing conditions. OER has a large overpotential and therefore determines the overall efficiency. Certain electrocatalysts can efficiently help to improve the reaction kinetics. Owing to the high cost of precious metals such as Pt, Ru, and Ir, non-precious metal oxide catalysts have been vigorously investigated under alkaline conditions. Herein, we synthesized novel highly dispersed amorphous CoO x for the first timemore » in the form of a cluster favorable to enhance the OER activity using a facile method via the air dielectric barrier discharge (DBD) plasma. Compared with the pristine biopolymer–cobalt complex, the amorphous CoO x cluster exhibits a much higher current density and a lower overpotential for OER, e.g., the overpotential of 290 mV at 10 mA cm -2 and the overpotential of only 350 mV at 300 mA cm -1. The excellent electrocatalytic OER activity was attributed to the unsaturated catalytic sites on the amorphous CoO x cluster. In addition, we studied the reaction mechanism, and it was observed that pure O 2 DBD plasma could lead to the evolution of crystalline CoO x; however, the presence of N 2 and O 2 in DBD plasma could ensure the facile evolution of amorphous CoO x clusters. This study provides a new strategy, therefore, to design amorphous materials for electrocatalysis and beyond.« less

Multijunction photovoltaic device and fabrication method

DOEpatents

Arya, Rajeewa R.; Catalano, Anthony W.

1993-09-21

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Mesoscopic Oxide Double Layer as Electron Specific Contact for Highly Efficient and UV Stable Perovskite Photovoltaics.

PubMed

Tavakoli, Mohammad Mahdi; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

2018-04-11

The solar to electric power conversion efficiency (PCE) of perovskite solar cells (PSCs) has recently reached 22.7%, exceeding that of competing thin film photovoltaics and the market leader polycrystalline silicon. Further augmentation of the PCE toward the Shockley-Queisser limit of 33.5% warrants suppression of radiationless carrier recombination by judicious engineering of the interface between the light harvesting perovskite and the charge carrier extraction layers. Here, we introduce a mesoscopic oxide double layer as electron selective contact consisting of a scaffold of TiO 2 nanoparticles covered by a thin film of SnO 2 , either in amorphous (a-SnO 2 ), crystalline (c-SnO 2 ), or nanocrystalline (quantum dot) form (SnO 2 -NC). We find that the band gap of a-SnO 2 is larger than that of the crystalline (tetragonal) polymorph leading to a corresponding lift in its conduction band edge energy which aligns it perfectly with the conduction band edge of both the triple cation perovskite and the TiO 2 scaffold. This enables very fast electron extraction from the light perovskite, suppressing the notorious hysteresis in the current-voltage ( J-V) curves and retarding nonradiative charge carrier recombination. As a result, we gain a remarkable 170 mV in open circuit photovoltage ( V oc ) by replacing the crystalline SnO 2 by an amorphous phase. Because of the quantum size effect, the band gap of our SnO 2 -NC particles is larger than that of bulk SnO 2 causing their conduction band edge to shift also to a higher energy thereby increasing the V oc . However, for SnO 2 -NC there remains a barrier for electron injection into the TiO 2 scaffold decreasing the fill factor of the device and lowering the PCE. Introducing the a-SnO 2 coated mp-TiO 2 scaffold as electron extraction layer not only increases the V oc and PEC of the solar cells but also render them resistant to UV light which forebodes well for outdoor deployment of these new PSC architectures.

Solution-processed small-molecule solar cells: breaking the 10% power conversion efficiency.

PubMed

Liu, Yongsheng; Chen, Chun-Chao; Hong, Ziruo; Gao, Jing; Yang, Yang Michael; Zhou, Huanping; Dou, Letian; Li, Gang; Yang, Yang

2013-11-28

A two-dimensional conjugated small molecule (SMPV1) was designed and synthesized for high performance solution-processed organic solar cells. This study explores the photovoltaic properties of this molecule as a donor, with a fullerene derivative as an acceptor, using solution processing in single junction and double junction tandem solar cells. The single junction solar cells based on SMPV1 exhibited a certified power conversion efficiency of 8.02% under AM 1.5 G irradiation (100 mW cm(-2)). A homo-tandem solar cell based on SMPV1 was constructed with a novel interlayer (or tunnel junction) consisting of bilayer conjugated polyelectrolyte, demonstrating an unprecedented PCE of 10.1%. These results strongly suggest solution-processed small molecular materials are excellent candidates for organic solar cells.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Influence of Needle Tip Distance on Barrier Discharge and Ozone Generation for Multiple Needles-Plane Electrode Configuration

NASA Astrophysics Data System (ADS)

Ueno, Hideki; Kawahara, Shintaro; Nakayama, Hiroshi

Relationship between barrier discharge characteristics and ozone generation under ac voltage application on triple needles-plane configuration has been investigated for various distances among triple needle-tips (d=0 ∼ 7.0mm) at constant distance between needle tip and plane (g=3.0mm) in dry air. Characteristics of barrier discharge and ozone generation depend on the needle-tips distance. It is considered that the influence is caused by space charge and accumulated charge suggested from discharge image by still camera and CCD camera. And ozone generation efficiency is also estimated by power consumption and ozone concentration. As a result, when the distance among triple needle-tips is narrow, the above-mentioned influence is strengthened. And in this case, ozone generation efficiency is improved.

NREL's III-V Team Demonstrates Record Efficiency Dual-Junction Solar Cell |

Science.gov Websites

-junction solar cell, surpassing the previous mark by a full percentage. Under one sun of illumination, the . Department of Energy's National Renewable Energy Laboratory (NREL) have set a record efficiency for a dual lattice-mismatched, 1.1-eV GaInAs bottom cell, grown monolithically by atmospheric pressure metal-organic

Amorphizing of Cu Nanoparticles toward Highly Efficient and Robust Electrocatalyst for CO2 Reduction to Liquid Fuels with High Faradaic Efficiencies.

PubMed

Duan, Yan-Xin; Meng, Fan-Lu; Liu, Kai-Hua; Yi, Sha-Sha; Li, Si-Jia; Yan, Jun-Min; Jiang, Qing

2018-04-01

Conversion of carbon dioxide (CO 2 ) into valuable chemicals, especially liquid fuels, through electrochemical reduction driven by sustainable energy sources, is a promising way to get rid of dependence on fossil fuels, wherein developing of highly efficient catalyst is still of paramount importance. In this study, as a proof-of-concept experiment, first a facile while very effective protocol is proposed to synthesize amorphous Cu NPs. Unexpectedly, superior electrochemical performances, including high catalytic activity and selectivity of CO 2 reduction to liquid fuels are achieved, that is, a total Faradaic efficiency of liquid fuels can sum up to the maximum value of 59% at -1.4 V, with formic acid (HCOOH) and ethanol (C 2 H 6 O) account for 37% and 22%, respectively, as well as a desirable long-term stability even up to 12 h. More importantly, this work opens a new avenue for improved electroreduction of CO 2 based on amorphous metal catalysts. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

owlcpp: a C++ library for working with OWL ontologies.

PubMed

Levin, Mikhail K; Cowell, Lindsay G

2015-01-01

The increasing use of ontologies highlights the need for a library for working with ontologies that is efficient, accessible from various programming languages, and compatible with common computational platforms. We developed owlcpp, a library for storing and searching RDF triples, parsing RDF/XML documents, converting triples into OWL axioms, and reasoning. The library is written in ISO-compliant C++ to facilitate efficiency, portability, and accessibility from other programming languages. Internally, owlcpp uses the Raptor RDF Syntax library for parsing RDF/XML and the FaCT++ library for reasoning. The current version of owlcpp is supported under Linux, OSX, and Windows platforms and provides an API for Python. The results of our evaluation show that, compared to other commonly used libraries, owlcpp is significantly more efficient in terms of memory usage and searching RDF triple stores. owlcpp performs strict parsing and detects errors ignored by other libraries, thus reducing the possibility of incorrect semantic interpretation of ontologies. owlcpp is available at http://owl-cpp.sf.net/ under the Boost Software License, Version 1.0.

Project Triple E Update: A Multi-Institution Implementation of a Faculty Support System.

ERIC Educational Resources Information Center

Robinson Group, Ltd., Tempe, AZ.

Project "Triple E" is cooperative endeavor initiated by The Robinson Group and International Business Machines, involving six community colleges in efforts to "empower" faculty by increasing access to information about, and communication with, students; to increase faculty "efficiency" by automating record keeping; and to enhance faculty…

A solar photovoltaic system with ideal efficiency close to the theoretical limit.

PubMed

Zhao, Yuan; Sheng, Ming-Yu; Zhou, Wei-Xi; Shen, Yan; Hu, Er-Tao; Chen, Jian-Bo; Xu, Min; Zheng, Yu-Xiang; Lee, Young-Pak; Lynch, David W; Chen, Liang-Yao

2012-01-02

In order to overcome some physical limits, a solar system consisting of five single-junction photocells with four optical filters is studied. The four filters divide the solar spectrum into five spectral regions. Each single-junction photocell with the highest photovoltaic efficiency in a narrower spectral region is chosen to optimally fit into the bandwidth of that spectral region. Under the condition of solar radiation ranging from 2.4 SUN to 3.8 SUN (AM1.5G), the measured peak efficiency under 2.8 SUN radiation reaches about 35.6%, corresponding to an ideal efficiency of about 42.7%, achieved for the photocell system with a perfect diode structure. Based on the detailed-balance model, the calculated theoretical efficiency limit for the system consisting of 5 single-junction photocells can be about 52.9% under 2.8 SUN (AM1.5G) radiation, implying that the ratio of the highest photovoltaic conversion efficiency for the ideal photodiode structure to the theoretical efficiency limit can reach about 80.7%. The results of this work will provide a way to further enhance the photovoltaic conversion efficiency for solar cell systems in future applications.

Triple-effect absorption refrigeration system with double-condenser coupling

DOEpatents

DeVault, R.C.; Biermann, W.J.

1993-04-27

A triple effect absorption refrigeration system is provided with a double-condenser coupling and a parallel or series circuit for feeding the refrigerant-containing absorbent solution through the high, medium, and low temperature generators utilized in the triple-effect system. The high temperature condenser receiving vaporous refrigerant from the high temperature generator is double coupled to both the medium temperature generator and the low temperature generator to enhance the internal recovery of heat within the system and thereby increase the thermal efficiency thereof.

Triple-effect absorption refrigeration system with double-condenser coupling

DOEpatents

DeVault, Robert C.; Biermann, Wendell J.

1993-01-01

A triple effect absorption refrigeration system is provided with a double-condenser coupling and a parallel or series circuit for feeding the refrigerant-containing absorbent solution through the high, medium, and low temperature generators utilized in the triple-effect system. The high temperature condenser receiving vaporous refrigerant from the high temperature generator is double coupled to both the medium temperature generator and the low temperature generator to enhance the internal recovery of heat within the system and thereby increase the thermal efficiency thereof.

Arc/Forearc Lengthening at Plate Triple Junctions and the Formation of Ophiolitic Soles

NASA Astrophysics Data System (ADS)

Casey, John; Dewey, John

2013-04-01

The principal enigma of large obducted ophiolite slabs is that they clearly must have been generated by some form of organized sea-floor spreading/plate-accretion, such as may be envisioned for the oceanic ridges, yet the volcanics commonly have arc affinity (Miyashiro) with boninites (high-temperature/low-pressure, high Mg and Si andesites), which are suggestive of a forearc origin. PT conditions under which boninites and metamorphic soles form and observations of modern forearc systems lead us to the conclusion that ophiolite formation is associated with overidding plate spreading centers that intersect the trench to form ridge-trench-trench of ridge-trench-tranform triple junctions. The spreading centers extend and lengthen the forearc parallel to the trench and by definition are in supra-subduction zone (SSZ) settings. Many ophiolites likewise have complexly-deformed associated mafic-ultramafic assemblages that suggest fracture zone/transform t along their frontal edges, which in turn has led to models involving the nucleation of subduction zones on fracture zones or transpressional transforms. Hitherto, arc-related sea-floor-spreading has been considered to be either pre-arc (fore-arc boninites) or post-arc (classic Karig-style back arc basins that trench-parallell split arcs). Syn-arc boninites and forearc oceanic spreading centers that involve a stable ridge/trench/trench triple or a ridge-trench-transform triple junction, the ridge being between the two upper plates, are consistent with large slab ophiolite formation in a readied obduction settting. The direction of subduction must be oblique with a different sense in the two subduction zones and the oblique subduction cannot be partitioned into trench orthogonal and parallel strike-slip components. As the ridge spreads, new oceanic lithosphere is created within the forearc, the arc and fore-arc lengthen significantly, and a syn-arc ophiolite forearc complex is generated by this mechanism. The ophiolite ages along arc-strike; a distinctive diachronous MORB-like to boninitic to arc volcanic stratigraphy develops vertically in the forearc and eruption centers progressively migrate from the forearc back to the main arc massif with time. Dikes in the ophiolite are highly oblique to the trench (as are back-arc magnetic anomalies. Boninites and high-mg andesites are generated in the fore-arc under the aqueous, low pressure/high temperature, regime at the ridge above the instantaneously developed subducting and dehydrating slab. Subducted slab refrigeration of the hanging wall ensues and accretion of MORB metabasites to the hanging wall of the subduction channel initiates. Mafic protolith garnet/two pyroxene granulites to greenschists accrete and form the inverted P and T metamorphic sole prior to obduction. Sole accretion of lithosphere begins at about 1000°C and the full retrogressive sole may be fully formed within ten to fifteen million years of accretion, at which time low grade subduction melanges accrete. Obduction of the SSZ forearc ophiolite with its subjacent metamorphic sole occurs whenever the oceanic arc attempts subduction of a stable buoyant continental or back arc margin.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

NASA Astrophysics Data System (ADS)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Inverted Three-Junction Tandem Thermophotovoltaic Modules

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven

2012-01-01

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-26

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s -1 , corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

MoO2 nanosheets embedded in amorphous carbon matrix for sodium-ion batteries

NASA Astrophysics Data System (ADS)

He, Hong; Man, Yuhong; Yang, Jingang; Xie, Jiale; Xu, Maowen

2017-10-01

MoO2 nanosheets embedded in the amorphous carbon matrix (MoO2/C) are successfully synthesized via a facile hydrothermal method and investigated as an anode for sodium-ion batteries. Because of the efficient ion transport channels and good volume change accommodation, MoO2/C delivers a discharge/charge capacity of 367.8/367.0 mAh g-1 with high coulombic efficiency (99.4%) after 100 cycles at a current density of 50 mA g-1.

Kinematics of the southern Red Sea-Afar Triple Junction and implications for plate dynamics

NASA Astrophysics Data System (ADS)

McClusky, Simon; Reilinger, Robert; Ogubazghi, Ghebrebrhan; Amleson, Aman; Healeb, Biniam; Vernant, Philippe; Sholan, Jamal; Fisseha, Shimelles; Asfaw, Laike; Bendick, Rebecca; Kogan, Lewis

2010-03-01

GPS measurements adjacent to the southern Red Sea and Afar Triple Junction, indicate that the Red Sea Rift bifurcates south of 17° N latitude with one branch following a continuation of the main Red Sea Rift (˜150° Az.) and the other oriented more N-S, traversing the Danakil Depression. These two rift branches account for the full Arabia-Nubia relative motion. The partitioning of extension between rift branches varies approximately linearly along strike; north of ˜16°N latitude, extension (˜15 mm/yr) is all on the main Red Sea Rift while at ˜13°N, extension (˜20 mm/yr) has transferred completely to the Danakil Depression. The Danakil Block separates the two rifts and rotates in a counterclockwise sense with respect to Nubia at a present-day rate of 1.9 ± 0.1°/Myr around a pole located at 17.0 ± 0.2°N, 39.7 ± 0.2°E, accommodating extension along the rifts and developing the roughly triangular geometry of the Danakil Depression. Rotating the Danakil Block back in time to close the Danakil Depression, and assuming that the rotation rate with respect to Nubia has been roughly constant, the present width of the Danakil Depression is consistent with initiation of block rotation at 9.3 ± 4 Ma, approximately coincident with the initiation of ocean spreading in the Gulf of Aden, and a concomitant ˜70% increase in the rate of Nubia-Arabia relative motion.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2015-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, K. H.; Schneider, T. A.; Vaughn, J. A.; Hoang, B.; Wong, F.

2014-01-01

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 µs to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2014-01-01

Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems/Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four array currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission.

Plate deformation at depth under northern California: Slab gap or stretched slab?

USGS Publications Warehouse

ten Brink, Uri S.; Shimizu, N.; Molzer, P.C.

1999-01-01

Plate kinematic interpretations for northern California predict a gap in the underlying subducted slab caused by the northward migration of the Pacific-North America-Juan de Fuca triple junction. However, large-scale decompression melting and asthenospheric upwelling to the base of the overlying plate within the postulated gap are not supported by geophysical and geochemical observations. We suggest a model for the interaction between the three plates which is compatible with the observations. In this 'slab stretch' model the Juan de Fuca plate under coastal northern California deforms by stretching and thinning to fill the geometrical gap formed in the wake of the northward migrating Mendocino triple junction. The stretching is in response to boundary forces acting on the plate. The thinning results in an elevated geothermal gradient, which may be roughly equivalent to a 4 Ma oceanic lithosphere, still much cooler than that inferred by the slab gap model. We show that reequilibration of this geothermal gradient under 20-30 km thick overlying plate can explain the minor Neogene volcanic activity, its chemical composition, and the heat flow. In contrast to northern California, geochemical and geophysical consequences of a 'true' slab gap can be observed in the California Inner Continental Borderland offshore Los Angeles, where local asthenospheric upwelling probably took place during the Miocene as a result of horizontal extension and rotation of the overlying plate. The elevated heat flow in central California can be explained by thermal reequilibration of the stalled Monterey microplate under the Coast Ranges, rather than by a slab gap or viscous shear heating in the mantle.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Commercial Development Of Ovonic Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Ovshinsky, Stanford R.

1983-09-01

One square foot Ovonic amorphous photovoltaic devices are already in commercial production and are manufactured through a continuous web process. The next levels of commercialization required to achieve a large-volume power market will be discussed, and the device specifications correlated with the chemical and electronic properties of the materials that we are developing to achieve even higher efficiencies. It has been long considered a utopian dream to harness the energy of the sun to create electricity that would be competitive in cost to that produced from the conventional sources of energy such as oil, gas, and uranium. The impact on our society of stand-alone power generators without moving parts using the continually available, ubiquitous energy of the sun could certainly lead to a new age with consequences comparable to the first introduction of electricity which greatly accelerated the Industrial Revolution. Low cost, nonpolluting energy not dependent upon or limited by transmission costs could again make DC electricity a realistic option. The relatively young field of photovoltaics suffers from certain dogmas that are just now being questioned. For example, it is thought by many that solar cells utilizing crys-talline materials have inherently higher efficiencies than those using amorphous materials, and that somehow crystalline solar cells, whether fabricated from single crystals or polycrystalline material, in round or rectangular geometries, grown from the melt or by a rib-bon process, can be reduced in cost sufficiently that the economics become attractive enough for large-scale terrestrial generation of power. In this paper, we shall show that amorphous materials can have much higher efficiencies than do crystalline and that the answer to our power generation needs lies not in crystalline but in amorphous technology. At Energy Conversion Devices, Inc. (ECD), we have designed and built a production machine (described by my colleague, Dr. Izu, in a subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Direct Free Carrier Photogeneration in Single Layer and Stacked Organic Photovoltaic Devices.

PubMed

Chandran, Hrisheekesh Thachoth; Ng, Tsz-Wai; Foo, Yishu; Li, Ho-Wa; Qing, Jian; Liu, Xiao-Ke; Chan, Chiu-Yee; Wong, Fu-Lung; Zapien, Juan Antonio; Tsang, Sai-Wing; Lo, Ming-Fai; Lee, Chun-Sing

2017-06-01

High performance organic photovoltaic devices typically rely on type-II P/N junctions for assisting exciton dissociation. Heremans and co-workers recently reported a high efficiency device with a third organic layer which is spatially separated from the active P/N junction; but still contributes to the carrier generation by passing its energy to the P/N junction via a long-range exciton energy transfer mechanism. In this study the authors show that there is an additional mechanism contributing to the high efficiency. Some bipolar materials (e.g., subnaphthalocyanine chloride (SubNc) and subphthalocyanine chloride (SubPc)) are observed to generate free carriers much more effectively than typical organic semiconductors upon photoexcitation. Single-layer devices with SubNc or SubPc sandwiched between two electrodes can give power conversion efficiencies 30 times higher than those of reported single-layer devices. In addition, internal quantum efficiencies (IQEs) of bilayer devices with opposite stacking sequences (i.e., SubNc/SubPc vs SubPc/SubNc) are found to be the sum of IQEs of single layer devices. These results confirm that SubNc and SubPc can directly generate free carriers upon photoexcitation without assistance from a P/N junction. These allow them to be stacked onto each other with reversible sequence or simply stacking onto another P/N junction and contribute to the photocarrier generation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

PubMed

Gui, Gui; Zhang, Kan; Blanchard, James P; Ma, Zhenqiang

2016-01-01

We have investigated the performance of 4H-SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p-n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p-n junction structure includes a p+ layer, a p- layer, an n+ layer, and an n- layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p-n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p- layer increase, whereas it is independent of the total depth of the p-n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p-n junction betavoltaic cell with a thicker and heavily doped p- layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. Copyright © 2015 Elsevier Ltd. All rights reserved.

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Facile Synthesis of Highly Efficient Amorphous Mn-MIL-100 Catalysts: Formation Mechanism and Structure Changes during Application in CO Oxidation.

PubMed

Zhang, Xiaodong; Li, Hongxin; Lv, Xutian; Xu, Jingcheng; Wang, Yuxin; He, Chi; Liu, Ning; Yang, Yiqiong; Wang, Yin

2018-06-21

A comprehensive study was carried out on amorphous metal-organic frameworks Mn-MIL-100 as efficient catalysts for CO oxidation. This study focused on explaining the crystalline-amorphous-crystalline transformations during thermolysis of Mn-MIL-100 and studying the structure changes during the CO oxidation reaction. A possible formation mechanism of amorphous Mn-MIL-100 was proposed. Amorphous Mn-MIL-100 obtained by calcination at 250 °C (a-Mn-250) showed a smaller specific surface area (4 m 2  g -1 ) but high catalytic activity. Furthermore, the structure of amorphous Mn-MIL-100 was labile during the reaction. When a-Mn-250 was treated with reaction atmosphere at high temperature (giving used-a-Mn-250-S), the amorphous catalysts transformed into Mn 2 O 3 . Meanwhile, the BET surface area (164 m 2  g -1 ) and catalytic performance both sharply increased. In addition, used-a-Mn-250-S catalyst transformed from Mn 2 O 3 into Mn 3 O 4 , and this resulted in a slight decrease of catalytic activity in the presence of 1 vol % water vapor in the feed stream. A schematic mechanism of the structure changes during the reaction process was proposed. The success of the synthesis relies on the increase in BET surface area by using CO as retreatment atmosphere, and the enhanced catalytic activity was attributed to the unique structure, a large quantity of surface active oxygen species, oxygen vacancies, and good low-temperature reduction behavior. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

QM/QM approach to model energy disorder in amorphous organic semiconductors.

PubMed

Friederich, Pascal; Meded, Velimir; Symalla, Franz; Elstner, Marcus; Wenzel, Wolfgang

2015-02-10

It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

In-Situ Welding Carbon Nanotubes into a Porous Solid with Super-High Compressive Strength and Fatigue Resistance

PubMed Central

Lin, Zhiqiang; Gui, Xuchun; Gan, Qiming; Chen, Wenjun; Cheng, Xiaoping; Liu, Ming; Zhu, Yuan; Yang, Yanbing; Cao, Anyuan; Tang, Zikang

2015-01-01

Carbon nanotube (CNT) and graphene-based sponges and aerogels have an isotropic porous structure and their mechanical strength and stability are relatively lower. Here, we present a junction-welding approach to fabricate porous CNT solids in which all CNTs are coated and welded in situ by an amorphous carbon layer, forming an integral three-dimensional scaffold with fixed joints. The resulting CNT solids are robust, yet still highly porous and compressible, with compressive strengths up to 72 MPa, flexural strengths up to 33 MPa, and fatigue resistance (recovery after 100,000 large-strain compression cycles at high frequency). Significant enhancement of mechanical properties is attributed to the welding-induced interconnection and reinforcement of structural units, and synergistic effects stemming from the core-shell microstructures consisting of a flexible CNT framework and a rigid amorphous carbon shell. Our results provide a simple and effective method to manufacture high-strength porous materials by nanoscale welding. PMID:26067176

In-Situ Welding Carbon Nanotubes into a Porous Solid with Super-High Compressive Strength and Fatigue Resistance.

PubMed

Lin, Zhiqiang; Gui, Xuchun; Gan, Qiming; Chen, Wenjun; Cheng, Xiaoping; Liu, Ming; Zhu, Yuan; Yang, Yanbing; Cao, Anyuan; Tang, Zikang

2015-06-11

Carbon nanotube (CNT) and graphene-based sponges and aerogels have an isotropic porous structure and their mechanical strength and stability are relatively lower. Here, we present a junction-welding approach to fabricate porous CNT solids in which all CNTs are coated and welded in situ by an amorphous carbon layer, forming an integral three-dimensional scaffold with fixed joints. The resulting CNT solids are robust, yet still highly porous and compressible, with compressive strengths up to 72 MPa, flexural strengths up to 33 MPa, and fatigue resistance (recovery after 100,000 large-strain compression cycles at high frequency). Significant enhancement of mechanical properties is attributed to the welding-induced interconnection and reinforcement of structural units, and synergistic effects stemming from the core-shell microstructures consisting of a flexible CNT framework and a rigid amorphous carbon shell. Our results provide a simple and effective method to manufacture high-strength porous materials by nanoscale welding.

In-Situ Welding Carbon Nanotubes into a Porous Solid with Super-High Compressive Strength and Fatigue Resistance

NASA Astrophysics Data System (ADS)

Lin, Zhiqiang; Gui, Xuchun; Gan, Qiming; Chen, Wenjun; Cheng, Xiaoping; Liu, Ming; Zhu, Yuan; Yang, Yanbing; Cao, Anyuan; Tang, Zikang

2015-06-01

Carbon nanotube (CNT) and graphene-based sponges and aerogels have an isotropic porous structure and their mechanical strength and stability are relatively lower. Here, we present a junction-welding approach to fabricate porous CNT solids in which all CNTs are coated and welded in situ by an amorphous carbon layer, forming an integral three-dimensional scaffold with fixed joints. The resulting CNT solids are robust, yet still highly porous and compressible, with compressive strengths up to 72 MPa, flexural strengths up to 33 MPa, and fatigue resistance (recovery after 100,000 large-strain compression cycles at high frequency). Significant enhancement of mechanical properties is attributed to the welding-induced interconnection and reinforcement of structural units, and synergistic effects stemming from the core-shell microstructures consisting of a flexible CNT framework and a rigid amorphous carbon shell. Our results provide a simple and effective method to manufacture high-strength porous materials by nanoscale welding.

Evidence for cis Amide Bonds in Peptoid Nanosheets.

PubMed

Hudson, Benjamin C; Battigelli, Alessia; Connolly, Michael D; Edison, John; Spencer, Ryan K; Whitelam, Stephen; Zuckermann, Ronald N; Paravastu, Anant K

2018-05-17

Peptoid nanosheets are supramolecular protein-mimetic materials that form from amphiphilic polypeptoids with aromatic and ionic side chains. Nanosheets have been studied at the nanometer scale, but the molecular structure has been difficult to probe. We report the use of 13 C- 13 C dipolar recoupling solid-state NMR measurements to reveal the configuration of backbone amide bonds selected by 13 C isotopic labeling of adjacent α-carbons. Measurements on the same molecules in the amorphous state and in nanosheets revealed that amide bonds in the center of the amino block of peptoid (NaeNpe) 7 -(NceNpe) 7 (B28) favor the trans configuration in the amorphous state and the cis configuration in the nanosheet. This unexpected result contrasts with previous NMR and theoretical studies of short solvated peptoids. Furthermore, examination of the amide bond at the junction of the two charged blocks within B28 revealed a mixture of both cis and trans configurational states, consistent with the previously predicted brickwork-like intermolecular organization.

Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

2013-11-01

Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

PubMed Central

de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

2015-01-01

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

Characterization of hydrogenated amorphous silicon films obtained from rice husk

NASA Astrophysics Data System (ADS)

Nandi, K. C.; Mukherjee, D.; Biswas, A. K.; Acharya, H. N.

1991-08-01

Hydrogenated amorphous silicon ( a-Si: H) films were prepared by chemical vapour deposition (CVD) of silanes generated by the acid hydrolysis of magnesium silicide (Mg 2Si) obtained from rice husk. The films were deposited at various substrate temperatures ( Ts) ranging from 430 to 520°C. The results show that the films have room temperature (294 K) dark conductivity (σ d) of the order of 10 -8 - 10 -10 (ohm-cm) -1 with single activation energy (Δ Ed) and the photoconductivity (σ ph) decreases with increase of Ts. Optical band gap ( Eopt) lies between 1.60-1.73 eV and hydrogen content ( CH) in the films is at best 8.3 at %. Au/ a-Si: H junction shows that it acts as a rectifier contact with Schottky barrier height ( VB) 0.69 eV. The films are contaminated by traces of impurities like Na, K, Al, Cl and O as revealed by secondary ion mass spectrometric (SIMS) analysis.

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

PubMed Central

2014-01-01

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

Amorphous silicon photovoltaic devices

DOEpatents

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Simultaneous Production of Reduced Nitrogen Compounds and Hydrocarbons Using Amorphous Iron Silicate Smokes as a Catalyst

NASA Technical Reports Server (NTRS)

Nuth, Joseph A., III; Hill, Hugh G. M.

2001-01-01

Amorphous iron silicates efficiently catalyze formation of hydrocarbons and ammonia under conditions similar to that found in the solar nebula. Preliminary data and rates will be discussed, and much further experimentation is required. Additional information is contained in the original extended abstract.

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE PAGES

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.; ...

2016-11-09

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Efficiency analysis of betavoltaic elements

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Shkrebtii, A. I.; Korkishko, R. M.; Kostylyov, V. P.; Kulish, M. R.; Sokolovskyi, I. O.

2015-09-01

The conversion of energy of electrons produced by a radioactive β-source into electricity in a Si and SiC p- n junctions is modeled. The features of the generation function that describes the electron-hole pair production by an electron flux and the emergence of a "dead layer" are discussed. The collection efficiency Q that describes the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the dead layer. It is shown that in the case of high-grade Si p- n junctions, the collection efficiency of electron-hole pairs created by a high-energy electrons flux (such as, e.g., Pm-147 beta flux) is close or equal to unity in a wide range of electron energies. For SiC p-n junctions, Q is near unity only for electrons with relatively low energies of about 5 keV (produced, e.g., by a tritium source) and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the dead layer on the collection efficiency is negligible, are determined. The open-circuit voltage is calculated for realistic values of the minority carriers' diffusion coefficients and lifetimes in Si and SiC p- n junctions, irradiated by a high-energy electrons flux. Our calculations allow to estimate the attainable efficiency of betavoltaic elements.

Energy-efficient membrane separations in the sweetener industry. Final report for Phase I

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babcock, W.C.

1984-02-14

The objective of the program is to investigate the use of membrane processes as energy-efficient alternatives to conventional separation processes in current use in the corn sweetener industry. Two applications of membranes were studied during the program: (1) the concentration of corn steep water by reverse osmosis; and (2) the concentration of dilute wastes called sweetwater with a combination of reverse osmosis and a process known as countercurrent reverse osmosis. Laboratory experiments were conducted for both applications, and the results were used to conduct technical and economic analyses of the process. It was determined that the concentration of steep watermore » by reverse osmosis plus triple-effect evaporation offers savings of a factor of 2.5 in capital costs and a factor of 4.5 in operating costs over currently used triple-effect evaporation. In the concentration of sweetwater by reverse osmosis and countercurrent reverse osmosis, capital costs would be about the same as those for triple-effect evaporation, but operating costs would be only about one-half those of triple-effect evaporation.« less

Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation

PubMed Central

Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

2012-01-01

Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm2 V−1 s−1 in intrinsic portion and ~2,500 cm2 V−1 s−1 in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p–n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p–n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film. PMID:23232410

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa; Sippola, Perttu

Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amountsmore » of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.« less

Two-bit multi-level phase change random access memory with a triple phase change material stack structure

NASA Astrophysics Data System (ADS)

Gyanathan, Ashvini; Yeo, Yee-Chia

2012-11-01

This work demonstrates a novel two-bit multi-level device structure comprising three phase change material (PCM) layers, separated by SiN thermal barrier layers. This triple PCM stack consisted of (from bottom to top), Ge2Sb2Te5 (GST), an ultrathin SiN barrier, nitrogen-doped GST, another ultrathin SiN barrier, and Ag0.5In0.5Sb3Te6. The PCM layers can selectively amorphize to form 4 different resistance levels ("00," "01," "10," and "11") using respective voltage pulses. Electrical characterization was extensively performed on these devices. Thermal analysis was also done to understand the physics behind the phase changing characteristics of the two-bit memory devices. The melting and crystallization temperatures of the PCMs play important roles in the power consumption of the multi-level devices. The electrical resistivities and thermal conductivities of the PCMs and the SiN thermal barrier are also crucial factors contributing to the phase changing behaviour of the PCMs in the two-bit multi-level PCRAM device.

Studies of silicon p-n junction solar cells. [open circuit photovoltage

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1976-01-01

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Further developments of series-connected superconducting tunnel junction to radiation detection

NASA Astrophysics Data System (ADS)

Kurakado, Masahiko; Ohsawa, Daisuke; Katano, Rintaro; Ito, Shin; Isozumi, Yasuhito

1997-10-01

One of the promising radiation detection devices for various practical applications is the series-connected superconducting tunnel junction (STJ) detector. In this article, interesting topics of the detectors are described since our previous work: e.g., more than two order higher detection efficiency compared with single STJ detectors, high count rate detection, and position resolution. Detectors were cooled to 0.35-0.4 K by means of a convenient 3He cryostat. The 5.9 and 6.5 keV x rays from 55Fe are separated by a detector specially designed for x-ray detection. The possible count rate of the series-junction detector estimated from the shaping-time constant applied in the measurements is high, e.g., over 104 counts per second. A series-junction detector equipped with a position sensing mechanism has shown a position resolution of about 35 μm in a sensing area with a radius of 1.1 mm. The position resolution of series junctions improves the energy resolution. A new type series-connected STJ detector is also proposed, i.e., the dispersed multitrap series-junction detector, for further improvement of detection efficiency and energy resolution.

Strain heating in process zones; implications for metamorphism and partial melting in the lithosphere

NASA Astrophysics Data System (ADS)

Devès, Maud H.; Tait, Stephen R.; King, Geoffrey C. P.; Grandin, Raphaël

2014-05-01

Since the late 1970s, most earth scientists have discounted the plausibility of melting by shear-strain heating because temperature-dependent creep rheology leads to negative feedback and self-regulation. This paper presents a new model of distributed shear-strain heating that can account for the genesis of large volumes of magmas in both the crust and the mantle of the lithosphere. The kinematic (geometry and rates) frustration associated with incompatible fault junctions (e.g. triple-junction) prevents localisation of all strain on the major faults. Instead, deformation distributes off the main faults forming a large process zone that deforms still at high rates under both brittle and ductile conditions. The increased size of the shear-heated region minimises conductive heat loss, compared with that commonly associated with narrow shear zones, thus promoting strong heating and melting under reasonable rheological assumptions. Given the large volume of the heated zone, large volumes of melt can be generated even at small melt fractions.

Viscoplastic fracture transition of a biopolymer gel.

PubMed

Frieberg, Bradley R; Garatsa, Ray-Shimry; Jones, Ronald L; Bachert, John O; Crawshaw, Benjamin; Liu, X Michael; Chan, Edwin P

2018-06-13

Physical gels are swollen polymer networks consisting of transient crosslink junctions associated with hydrogen or ionic bonds. Unlike covalently crosslinked gels, these physical crosslinks are reversible thus enabling these materials to display highly tunable and dynamic mechanical properties. In this work, we study the polymer composition effects on the fracture behavior of a gelatin gel, which is a thermoreversible biopolymer gel consisting of denatured collagen chains bridging physical network junctions formed from triple helices. Below the critical volume fraction for chain entanglement, which we confirm via neutron scattering measurements, we find that the fracture behavior is consistent with a viscoplastic type process characterized by hydrodynamic friction of individual polymer chains through the polymer mesh to show that the enhancement in fracture scales inversely with the squared of the mesh size of the gelatin gel network. Above this critical volume fraction, the fracture process can be described by the Lake-Thomas theory that considers fracture as a chain scission process due to chain entanglements.

Active zones of mammalian neuromuscular junctions: formation, density, and aging.

PubMed

Nishimune, Hiroshi

2012-12-01

Presynaptic active zones are synaptic vesicle release sites that play essential roles in the function and pathology of mammalian neuromuscular junctions (NMJs). The molecular mechanisms of active zone organization use presynaptic voltage-dependent calcium channels (VDCCs) in NMJs as scaffolding proteins. VDCCs interact extracellularly with the muscle-derived synapse organizer, laminin β2 and interact intracellularly with active zone-specific proteins, such as Bassoon, CAST/Erc2/ELKS2alpha, ELKS, Piccolo, and RIMs. These molecular mechanisms are supported by studies in P/Q- and N-type VDCCs double-knockout mice, and they are consistent with the pathological conditions of Lambert-Eaton myasthenic syndrome and Pierson syndrome, which are caused by autoantibodies against VDCCs or by a laminin β2 mutation. During normal postnatal maturation, NMJs maintain the density of active zones, while NMJs triple their size. However, active zones become impaired during aging. Propitiously, muscle exercise ameliorates the active zone impairment in aged NMJs, which suggests the potential for therapeutic strategies. © 2012 New York Academy of Sciences.

New geodetic measurements in central Afar constraining the Arabia-Somalia-Nubia triple junction kinematics

NASA Astrophysics Data System (ADS)

Doubre, C.; Deprez, A.; Masson, F.; Socquet, A.; Lewi, E.; Grandin, R.; Calais, E.; Wright, T. J.; Bendick, R. O.; Pagli, C.; Peltzer, G.; de Chabalier, J. B.; Ibrahim Ahmed, S.

2014-12-01

The Afar Depression is an extraordinary submerged laboratory where the crustal mechanisms involved in the active rifting process can be studied. But the crustal movements at the regional scale are complicated by being the locus of the meeting of three divergent plate boundaries: the oceanic spreading ridges of the Red Sea and the Aden Ridge and the intra-continental East-African Rift (EAR). We present here the first GPS measurements conducted in a new network in Central Afar, complementing existing networks in Eritrea, around the Manda-Harraro 2005-2010 active segment, in the Northern part of the EAR and in Djibouti. Even if InSAR data were appropriate for mapping the deformation field, the results are difficult to interpret for analyzing the regional kinematics because of the atmospheric conditions, the lack of complete data catalogue, the acquisition configuration and the small velocity variations. Therefore, our measurements in the new sites are crucial to obtain an accurate velocity field over the whole depression, and focus specifically on the spatial organization of the deformation to characterize the tripe junction. These first results show that a small part of the motion of the Somalia plate with respect to the Nubia plate or the Arabia plate (2-3 mm/yr) occurs south of the Tadjura Gulf and East of the Adda-do segment in Southern Afar. The complex kinematic pattern involves a clockwise rotation of this Southeastern part of the Afar rift and can be related to the significant seismic activity regularly recorded in the region of Jigjiga (northern Somalia-Ethiopia border). The western continuation of the Aden Ridge into Afar extends West of the Asal rift segment and does not reach the young active segment of Manda-Inakir (MI). A slow gradient of velocity is observed across the Dobi Graben and across the large systems of faults between Lake Abhe and the MI rift segment. A striking change of the velocity direction occurs in the region of Assaïta, west of Lake Abhe, suggesting that this area represents the most probable location for the triple junction.

Electrophoretic deposited TiO 2 pigment-based back reflectors for thin film solar cells

DOE PAGES

Bills, Braden; Morris, Nathan; Dubey, Mukul; ...

2015-01-16

Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO 2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectricmore » breakdown approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

Results from a 14-month hydroacoustic monitoring of the three mid-oceanic ridges in the Indian Ocean

NASA Astrophysics Data System (ADS)

Royer, J.-Y.; Dziak, R. P.; Delatre, M.; Chateau, R.; Brachet, C.; Haxel, J. H.; Matsumoto, H.; Goslin, J.; Brandon, V.; Bohnenstielh, D. R.

2009-04-01

From October 2006 to January 2008, an hydroacoustic experiment in the Indian Ocean was carried out by the CNRS/University of Brest and NOAA/Oregon State University to monitor the low-level seismic activity associated with the three contrasting spreading ridges and deforming zones in the Indian Ocean. Three autonomous hydrophones were moored in the SOFAR channel by R/V Marion Dufresne for 14 months in the Madagascar Basin, and northeast and southwest of Amsterdam Island, complementing the two permanent hydroacoustic stations of the Comprehensive nuclear-Test-Ban Treaty Organization (CTBTO) located near Diego Garcia Island and off Cape Leeuwin. The three instruments successfully collected 14 month of continuous acoustic records. Combined with the records from the permanent stations, the array detected 1780 acoustic events consisting mostly of earthquake generated T-waves, but also of iceberg tremors from Wilkes Land, Antarctica. Within the triangle defined by the temporary array, the three ridges exhibit contrasting seismicity patterns. Along the Southeast Indian ridge (SEIR), the 272 acoustic events (vs 24 events in the NEIC catalog) occur predominantly along the transform faults ; only one ridge segment (76˚E) displays a continuous activity for 10 months. Along the Central Indian Ridge (CIR), seismicity is distributed along fracture zones and ridge segments (269 events vs 45 NEIC events), with two clusters of events near the triple junction (24-25S) and south of Marie-Celeste FZ (18.5S). Along the Southwest Indian Ridge (SWIR), the 222 events (vs 31 NEIC events) are distributed along the ridge segments with a larger number of events west of Melville FZ and a cluster at 58E. The immediate vicinity of the Rodrigues triple junction shows periods of quiescence and of intense activity. Some large earthquakes (Mb>5) near the triple junction (SEIR and CIR) seem to be preceded by several acoustic events that may be precursors. Finally, off-ridge seismicity is mostly detected in the southern part of the Central Indian Basin as a result of the intraplate deformation between the Capricorn and Australian plates. Other signals of interest are identified such as a 6-week long series of broadband (1-125 Hz) explosive signals detected only by the instrument located between Kerguelen and Amsterdam islands, many cryogenic tremors easily recognizable from their varying tones and harmonics, some of which can be precisely located off the Antarctic shelf, and finally whale calls attributed to four different whale species. This vocal activity is found to be highly seasonal, occurring mainly from April to October with subspecies variations. Detailed analyses of this unique data set are still underway.

The Radar Effects of Perchlorate-Doped Ice in the Martian Polar Layered Deposits

NASA Astrophysics Data System (ADS)

Stillman, D.; Winebrenner, D. P.; Grimm, R. E.; Pathare, A.

2010-12-01

The presence of perchlorate in soil at near-polar latitudes on Mars suggests that dust in the ice of the North Polar Layered Deposits (NPLD) may introduce perchlorate impurities to that ice. Because eutectic temperatures of perchlorate salts range as low as 206 K (for magnesium perchlorate), perchlorate doping of NPLD ice may result in grain-scale liquid veins and softening of ice rheology at temperatures comparable to those computed for the base of the NPLD in the present climate. Any such softening would be important for understanding how processes including ice flow have shaped the NPLD. Observable consequences of such softening, or of the combination of perchlorate doping and temperatures that could cause softening, are thus similarly important. In particular, the dielectric properties of perchlorate-laden ice in a temperature gradient will change relatively rapidly at the point in the gradient near the eutectic temperature. Here we investigate the radar reflectivity of such a eutectic transition in ice with a model in which perchlorate concentration is constant and temperature varies linearly with depth in the ice. We have conducted measurements of the complex permittivity of Mg and Na perchlorate-doped ice over a range of temperatures (183 - 273 K) and concentrations. Below the eutectic temperature, the perchlorate-doped ice has electrical properties similar to that of choride-doped ice. However, above the eutectic temperature, some of the ice melts forming liquid at triple junctions. At concentrations above 3 mM, the liquid at triple junctions become connected forming brine channels, which greatly increase the dc conductivity and radar attenuation. At concentrations below 3 mM, the liquid at triple junctions are not connected and do not affect the dc conductivity. However, the liquid H2O molecules are able to rotate their permanent dipole at radar frequencies, thus causing an increase in radar attenuation. The MARSIS and SHARAD attenuation rates increase with temperature as the strength of the loss increases with a greater amount of liquid water even though the relaxation frequency (maximum loss) shifts to higher frequencies. We combine our electrical property measurements with a model for radar reflection from a continuously-varying dielectric profile. Because the change in permittivity occurs over a range of depths depending on the value of the temperature gradient, radar detectability of the eutectic transition depends on the radar frequency as well as gradient and concentration values. We compute expected radar echo strengths for MARSIS and SHARAD and depths relative to the bed at which transitions may be expected, to address whether information of direct rheological relevance may be available from those instruments.

Hidden Earthquake Potential in Plate Boundary Transition Zones

NASA Astrophysics Data System (ADS)

Furlong, Kevin P.; Herman, Matthew; Govers, Rob

2017-04-01

Plate boundaries can exhibit spatially abrupt changes in their long-term tectonic deformation (and associated kinematics) at triple junctions and other sites of changes in plate boundary structure. How earthquake behavior responds to these abrupt tectonic changes is unclear. The situation may be additionally obscured by the effects of superimposed deformational signals - juxtaposed short-term (earthquake cycle) kinematics may combine to produce a net deformational signal that does not reflect intuition about the actual strain accumulation in the region. Two examples of this effect are in the vicinity of the Mendocino triple junction (MTJ) along the west coast of North America, and at the southern end of the Hikurangi subduction zone, New Zealand. In the region immediately north of the MTJ, GPS-based observed crustal displacements (relative to North America (NAm)) are intermediate between Pacific and Juan de Fuca (JdF) motions. With distance north, these displacements rotate to become more aligned with JdF - NAm displacements, i.e. to motions expected along a coupled subduction interface. The deviation of GPS motions from the coupled subduction interface signal near the MTJ has been previously interpreted to reflect clock-wise rotation of a coastal, crustal block and/or reduced coupling at the southern Cascadia margin. The geologic record of crustal deformation near the MTJ reflects the combined effects of northward crustal shortening (on geologic time scales) associated with the MTJ Crustal Conveyor (Furlong and Govers, 1999) overprinted onto the subduction earthquake cycle signal. With this interpretation, the Cascadia subduction margin appears to be well-coupled along its entire length, consistent with paleo-seismic records of large earthquake ruptures extending to its southern limit. At the Hikurangi to Alpine Fault transition in New Zealand, plate interactions switch from subduction to oblique translation as a consequence of changes in lithospheric structure of the Pacific plate (without a triple junction). Here, the short-term, earthquake-cycle signal recorded by GPS shows a reduction in plate motion-directed displacements, which has been interpreted to reflect reduced coupling along the southernmost segment. However, this signal records both the subduction interface coupling effects related to the megathrust earthquake cycle and the shear deformation produced by the extensive right-lateral shear of the Marlborough Fault system (MFS). This superposition of deformation signals combine to mask a strongly coupled interface. The relevance of this effect is seen in the recent (November 2016) Kaikoura earthquake ,which appears to have both ruptured the megathrust interface and produced strike slip displacements on upper-plate crustal faults. These effects seen at these locations and elsewhere may cause misinterpretations of short-term deformation signals in terms of the longer term tectonic behavior of the plate boundary, missing a significant component of the earthquake potential.

Ultrasensitive Surface-Enhanced Raman Spectroscopy Detection Based on Amorphous Molybdenum Oxide Quantum Dots.

PubMed

Li, Hao; Xu, Qun; Wang, Xuzhe; Liu, Wei

2018-06-07

Surface-enhanced Raman spectroscopy (SERS) based on plasmonic semiconductive material has been proved to be an efficient tool to detect trace of substances, while the relatively weak plasmon resonance compared with noble metal materials restricts its practical application. Herein, for the first time a facile method to fabricate amorphous H x MoO 3 quantum dots with tunable plasmon resonance is developed by a controlled oxidization route. The as-prepared amorphous H x MoO 3 quantum dots show tunable plasmon resonance in the region of visible and near-infrared light. Moreover, the tunability induced by SC CO 2 is analyzed by a molecule kinetic theory combined with a molecular thermodynamic model. More importantly, the ultrahigh enhancement factor of amorphous H x MoO 3 quantum dots detecting on methyl blue can be up to 9.5 × 10 5 with expending the limit of detection to 10 -9 m. Such a remarkable porperty can also be found in this H x MoO 3 -based sensor with Rh6G and RhB as probe molecules, suggesting that the amorphous H x MoO 3 quantum dot is an efficient candidate for SERS on molecule detection in high precision. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

PubMed

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

DOE PAGES

Essig, Stephanie; Steiner, Myles A.; Allebe, Christophe; ...

2016-04-27

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells.more » Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.« less

Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Steiner, Myles A.; Allebe, Christophe

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells.more » Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.« less

Rear surface effects in high efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenham, S.R.; Robinson, S.J.; Dai, X.

1994-12-31

Rear surface effects in PERL solar cells can lead not only to degradation in the short circuit current and open circuit voltage, but also fill factor. Three mechanisms capable of changing the effective rear surface recombination velocity with injection level are identified, two associated with oxidized p-type surfaces, and the third with two dimensional effects associated with a rear floating junction. Each of these will degrade the fill factor if the range of junction biases corresponding to the rear surface transition, coincides with the maximum power point. Despite the identified non idealities, PERL cells with rear floating junctions (PERF cells)more » have achieved record open circuit voltages for silicon solar cells, while simultaneously achieving fill factor improvements relative to standard PERL solar cells. Without optimization, a record efficiency of 22% has been demonstrated for a cell with a rear floating junction. The results of both theoretical and experimental studies are provided.« less

Quantum efficiencies exceeding unity in amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanmaekelbergh, D.; Lagemaat, J. van de; Schropp, R.E.I.

1994-12-31

The experimental observation of internal quantum efficiencies above unity in crystalline silicon solar cells has brought up the question whether the generation of multiple electron/hole pairs has to be taken into consideration also in solar cells based on direct gap amorphous semiconductors. To study photogenerated carrier dynamics, the authors have applied Intensity Modulated Photocurrent Spectroscopy (IMPS) to hydrogenated amorphous silicon p-i-n solar cells. In the reverse voltage bias region at low illumination intensities it has been observed that the low frequency limit of the AC quantum yield Y increases significantly above unit with decreasing light intensity, indicating that more thanmore » one electron per photon is detected in the external circuit. This phenomenon can be explained by considering trapping and thermal emission of photogenerated carriers at intragap atmospheric dangling bond defect centers.« less

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparentmore » passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.« less

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu; Johnson, Forrest

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. %more » Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.« less

Ultrastructure of myocardial widened Z bands and endocardial cells in two teleostean species.

PubMed

Leknes, I L

1981-01-01

Widened myocardial Z bands and endocardial cells are described in two teleostean species Cichlasoma meeki and Corydoras aeneus. Widened Z bands containing mainly amorphous and electron-dense material were seen in a number of myocardial cells. Further, similar material may occur in large amounts beneath the sarcolemma and at intercellular junctions. Occasionally, we observed continuity between the latter material and that in expanded Z bands. In C. meeki the ventricular endocardial layer consists of two structurally different cell types, whereas in C. aeneus only one cell type was seen. The functional aspects of widened Z bands are discussed.

A high efficiency dual-junction solar cell implemented as a nanowire array.

PubMed

Yu, Shuqing; Witzigmann, Bernd

2013-01-14

In this work, we present an innovative design of a dual-junction nanowire array solar cell. Using a dual-diameter nanowire structure, the solar spectrum is separated and absorbed in the core wire and the shell wire with respect to the wavelength. This solar cell provides high optical absorptivity over the entire spectrum due to an electromagnetic concentration effect. Microscopic simulations were performed in a three-dimensional setup, and the optical properties of the structure were evaluated by solving Maxwell's equations. The Shockley-Queisser method was employed to calculate the current-voltage relationship of the dual-junction structure. Proper design of the geometrical and material parameters leads to an efficiency of 39.1%.

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.

PubMed

Choi, Min Sup; Qu, Deshun; Lee, Daeyeong; Liu, Xiaochi; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong

2014-09-23

This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10(10) Jones, and light switching ratio of ∼10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC) and short-circuit current (ISC) were understood to originate from the formation of a p-n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p-n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

A comment on the dependence of LED’s efficiency on the junction ideality factor

NASA Astrophysics Data System (ADS)

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-05-01

P–n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed. In this article we have discussed the problems faced while extracting the ideality factor from the I–V characteristics of a p–n LED and its significance in device performance.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

NASA Technical Reports Server (NTRS)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Photovoltaic Science and Engineering Conference in Japan, 2nd, Tokyo, Japan, December 2-4, 1980, Proceedings

NASA Astrophysics Data System (ADS)

The state-of-the-art in amorphous solar cells is reviewed in terms of polycrystalline silicon solar cells, single crystal silicon solar cells, and methods of characterizing solar cells, including dielectric liquid immersion to increase cell efficiency. Compound semiconductor solar cells are explored, and new structures and advanced solar cell materials are discussed. Film deposition techniques for fabricating amorphous solar cells are presented, and the characterization, in addition to the physics and the performance, of amorphous solar cells are examined.

Nonlinear optical response of the collagen triple helix and second harmonic microscopy of collagen liquid crystals

NASA Astrophysics Data System (ADS)

Deniset-Besseau, A.; De Sa Peixoto, P.; Duboisset, J.; Loison, C.; Hache, F.; Benichou, E.; Brevet, P.-F.; Mosser, G.; Schanne-Klein, M.-C.

2010-02-01

Collagen is characterized by triple helical domains and plays a central role in the formation of fibrillar and microfibrillar networks, basement membranes, as well as other structures of the connective tissue. Remarkably, fibrillar collagen exhibits efficient Second Harmonic Generation (SHG) and SHG microscopy proved to be a sensitive tool to score fibrotic pathologies. However, the nonlinear optical response of fibrillar collagen is not fully characterized yet and quantitative data are required to further process SHG images. We therefore performed Hyper-Rayleigh Scattering (HRS) experiments and measured a second order hyperpolarisability of 1.25 10-27 esu for rat-tail type I collagen. This value is surprisingly large considering that collagen presents no strong harmonophore in its amino-acid sequence. In order to get insight into the physical origin of this nonlinear process, we performed HRS measurements after denaturation of the collagen triple helix and for a collagen-like short model peptide [(Pro-Pro-Gly)10]3. It showed that the collagen large nonlinear response originates in the tight alignment of a large number of weakly efficient harmonophores, presumably the peptide bonds, resulting in a coherent amplification of the nonlinear signal along the triple helix. To illustrate this mechanism, we successfully recorded SHG images in collagen liquid solutions by achieving liquid crystalline ordering of the collagen triple helices.

Material Science for High-Efficiency Photovoltaics: From Advanced Optical Coatings to Cell Design for High-Temperature Applications

NASA Astrophysics Data System (ADS)

Perl, Emmett Edward

Solar cells based on III-V compound semiconductors are ideally suited to convert solar energy into electricity. The highest efficiency single-junction solar cells are made of gallium arsenide, and have attained an efficiency of 28.8%. Multiple III-V materials can be combined to construct multijunction solar cells, which have reached record efficiencies greater than 45% under concentration. III-V solar cells are also well suited to operate efficiently at elevated temperatures, due in large part to their high material quality. These properties make III-V solar cells an excellent choice for use in concentrator systems. Concentrator photovoltaic systems have attained module efficiencies that exceed 40%, and have the potential to reach the lowest levelized cost of electricity in sunny places like the desert southwest. Hybrid photovoltaic-thermal solar energy systems can utilize high-temperature III-V solar cells to simultaneously achieve dispatchability and a high sunlight-to-electricity efficiency. This dissertation explores material science to advance the state of III-V multijunction solar cells for use in concentrator photovoltaic and hybrid photovoltaic-thermal solar energy systems. The first half of this dissertation describes work on advanced optical designs to improve the efficiency of multijunction solar cells. As multijunction solar cells move to configurations with four or more subcells, they utilize a larger portion of the solar spectrum. Broadband antireflection coatings are essential to realizing efficiency gains for these state-of-the-art cells. A hybrid design consisting of antireflective nanostructures placed on top of multilayer interference-based optical coatings is developed. Antireflection coatings that utilize this hybrid approach yield unparalleled performance, minimizing reflection losses to just 0.2% on sapphire and 0.6% on gallium nitride for 300-1800nm light. Dichroic mirrors are developed for bonded 5-junction solar cells that utilize InGaN as a top junction. These designs maximize reflection of high-energy light for an InGaN top junction while minimizing reflection of low-energy light that would be absorbed by the lower four junctions. Increasing the reflectivity of high-energy photons enables a second pass of light through the InGaN cell, leading to increased absorption and a higher photocurrent. These optical designs enhanced the efficiency of a 2.65eV InGaN solar cell to a value of 3.3% under the AM0 spectrum, the highest reported efficiency for a standalone InGaN solar cell. The second half of the dissertation describes the development of III-V solar cells for high-temperature applications. As the operating temperature of a solar cell is increased, the ideal bandgap of the top junction increases. AlGaInP solar cells with bandgaps ranging from 1.9eV to 2.2eV are developed. A 2.03eV AlGaInP solar cell is demonstrated with a bandgap-voltage offset of 440mV, the lowest of any AlGaInP solar cell reported to date. Single-junction AlGaInP, GaInP, and GaAs solar cells designed for high-temperature operation are characterized up to a temperature of 400°C. The cell properties are compared to an analytical drift-diffusion model, and we find that a fundamental increase in the intrinsic carrier concentration, ni, dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. These findings provide a valuable guide to the design of any system that requires high-temperature solar cell operation.

Investigation Results on Solar Array Thermal & Electrical Imbalance Phenomenon on Power Systems Equipped with MPPT

NASA Astrophysics Data System (ADS)

Mercier, F.; Samaniego, B.; Soriano, T.; Beaufils, G.; Fernandez Lisbona, E.; Dettlaff, K.; Jensen, H.

2014-08-01

The thermal / electrical imbalance phenomenon on the satellite solar arrays is a common issue inherent to the negative thermal voltage coefficient of the triple junction cells, which is usually already taken into account with basic precautions on the solar panel layout.In the frame of the ESA TRP study "Investigation on Solar Array thermal and electrical imbalance phenomenon on power systems equipped with Maximum Power Point Tracker (MPPT)" performed by Airbus Defence & Space (former Astrium Toulouse and Ottobrunn) and TERMA, in-depth analyses were conducted for the first time to better understand and characterize the secondary maximum power point phenomenon for various representative mission cases, whether in Earth vicinity or not. With the help of a newly developed detailed thermo-electrical coupled solver and a wide range of solar cell characterizations in flux and temperature, multiple sets of simulations were run to simulate realistic solar panel characteristics.The study showed that no secondary false maximum power point can be created on the solar panel characteristic IV curve for missions around Earth vicinity, at the sole exception of critical shadowing cases. Furthermore, the same conclusions apply for missions up to Mars orbit. The only potential threats come from the missions further than Mars (typically Jupiter missions) where various very high heterogeneities could lead to multiple maxima. This is deeply linked to the LILT (low illumination low temperature) conditions applied to the current solar cell triple junction characteristics and shape. Moreover, thermo-electrical imbalances that do not create secondary power point can still seriously grieve the solar array power output performances. This power loss can however be accurately assessed by the newly developed solver in support of in-development missions like Juice.

The Angular Velocity of Nubia Relative to Somalia and the Location of the Nubia-Somalia-Antarctica Triple Junction

NASA Astrophysics Data System (ADS)

Horner-Johnson, B. C.; Gordon, R. G.; Cowles, S. M.; Argus, D. F.

2003-12-01

A new analysis of geologically current plate motion across the Southwest Indian Ridge and of the current location of the Nubia-Antarctica-Somalia triple junction is presented. We estimate spreading rates averaged over the past 3.2 Myr from 103 well-distributed, nearly ridge-perpendicular profiles crossing the Southwest Indian Ridge. We evaluate all available bathymetric data to estimate the azimuths and uncertainties of transform faults; six are estimated from multi-beam data and twelve from precision depth recorder data. If the Nubia-Somalia boundary is narrow where it intersects the Southwest Indian Ridge, that intersection lies between about 26° E and 32° E. This places it either along the spreading ridge segment just west of the Andrew Bain transform fault complex or along the transform fault complex itself. These limits are narrower than, and contained within, limits of about 24° E to 33° E previously found by Lemaux et al. (2002) from an analysis of the locations of magnetic anomaly 5. The data are consistent with a narrow boundary, but also consistent with a diffuse boundary as wide as about 700 km. The new Nubia-Somalia pole of rotation lies southwest of southern Africa and differs significantly from previously estimated poles, including that from data in the Red Sea and Gulf of Aden. The new pole indicates displacement rates of Somalia relative to Nubia of 3.4 +/- 1.3\\ mm yr-1 (95% confidence limits) towards 176.8° between Somalia and Nubia near the Southwest Indian Ridge, and of 8.4 +/- 1.3\\ mm yr-1 (95% confidence limits) towards 118.5° near Afar.

Capacity Building for Sustainable Seismological Networks in the Americas: A Pan-American Advanced Studies Institute on New Frontiers in Seismological Research

NASA Astrophysics Data System (ADS)

Cabello, O. A.; Meltzer, A.; Sandvol, E. A.; Yepes, H.; Ruiz, M. C.; Barrientos, S. E.; Willemann, R. J.

2011-12-01

During July 2011, a Pan-American Advanced Studies Institute, "New Frontiers in Seismological Research: Sustainable Networks, Earthquake Source Parameters, and Earth Structure" was conducted in Quito Ecuador with participants from the US, Central, and South America, and the Caribbean at early stages in their scientific careers. This advanced studies institute was imparted by fifteen volunteer senior faculty and investigators from the U.S. and the Americas. The curriculum addressed the importance of developing and maintaining modern seismological observatories, reviewed the principles of sustainable network operations, and explored recent advances in the analysis of seismological data in support of basic research, education, and hazard mitigation. An additional goal was to develop future international research collaborations. The Institute engaged graduate students, post-doctoral students, and new faculty from across the Americas in an interactive collaborative learning environment including modules on double-difference earthquake location and tomography, regional centroid-moment tensors, and event-based and ambient noise surface wave dispersion and tomography. Under the faculty guidance, participants started promising research projects about surface wave tomography in southeastern Brazil, near the Chilean triple junction, in central Chilean Andes, at the Peru-Chile border, within Peru, at a volcano in Ecuador, in the Caribbean Sea region, and near the Mendocino triple junction. Other participants started projects about moment tensors of earthquakes in or near Brazil, Chile and Argentina, Costa Rica, Ecuador, Puerto Rico, western Mexico, and northern Mexico. In order to track the progress of the participants and measure the overall effectiveness of the Institute a reunion is planned where the PASI alumni will present the result of their research that was initiated in Quito

Elevated helium isotope ratios in the northern Lau and north Fiji basins: Intrusion of the Samoan hotspot or another OIB component?

NASA Astrophysics Data System (ADS)

Lupton, J. E.; Price, A. A.; Jackson, M. G.; Arculus, R. J.; Nebel, O.

2016-12-01

The submarine volcanic rocks of the northern Lau Basin exhibit a complex pattern in helium and radiogenic isotope ratios attributed to the interplay of depleted upper mantle, arc, and hotspot components. The seafloor lavas of the NW Lau Spreading Center (NWLSC) and Rochambeau Rifts have elevated 3He/4He ratios (12 - 28 Ra) indicating that a mantle plume component, possibly from Samoa, has influenced this extensional zone (Lupton et al., 2009). However, this hotspot helium is absent in the NE Lau Basin, which has MOR-type helium ( 8 Ra). We have analyzed helium isotope ratios in 40 additional submarine samples collected on the 2012 cruise of the R/V Southern Surveyor which extend the geographic coverage farther west into the Fiji Basin. To the west of the NWLSC, several samples from the Futuna Volcanic Zone and the Futuna Spreading Center have elevated 3He/4He in the range of 12 - 20.9 Ra, presumably related to the same OIB influence detected along the nearby NW Lau backarc spreading system. Surprisingly, the NE Fiji Triple Junction 1000 km to the west of the NWLSC, also has elevated 3He/4He up to 14.4 Ra. When radiogenic isotopes (Sr, Nd, Hf) are added to the picture, samples from the Futuna Volcanic Zone and from the NE Fiji Triple Junction fall on a mixing trend between depleted MORB mantle and FOZO, as do samples from the Rochambeau Rifts and NWLSC. However, this trend is distinct from that of Samoa proper, suggesting that only a restricted (FOZO) portion of the Samoan plume is responsible for the elevated 3He/4He in the northern Lau and Fiji basins.

Constraints on mantle melt geometries from body wave attenuation in the Salton Trough and Snake River Plain

NASA Astrophysics Data System (ADS)

Byrnes, J. S.; Bezada, M.

2017-12-01

Melt can be retained in the mantle at triple junctions between grain boundaries, be spread in thin films along two-grain boundaries, or be organized by shear into elongate melt-rich bands. Which of these geometries is most prevalent is unknown. This ambiguity makes the interpretation of anomalous seismic velocities and quality factors difficult, since different geometries would result in different mechanical effects. Here, we compare observations of seismic attenuation beneath the Salton Trough and the Snake River Plain; two regions where the presence of melt has been inferred. The results suggest that seismic attenuation is diagnostic of melt geometry. We measure the relative attenuation of P waves from deep focus earthquakes using a time-domain method. Even though the two regions are underlain by comparably strong low-velocity anomalies, their attenuation signature is very different. The upper mantle beneath the Salton Trough is sufficiently attenuating that the presence of melt must lower Qp, while attenuation beneath the Snake River Plain is not anomalous with respect to surrounding regions. These seemingly contradictory results can be reconciled if different melt geometries characterize each region. SKS splitting from the Salton Trough suggests that melt is organized into melt-rich bands, while this is not the case for the Snake River Plain. We infer that beneath the Snake River Plain melt is retained at triple junctions between grain boundaries, a geometry that is not predicted to cause seismic attenuation. More elongate geometries beneath the Salton Trough may cause seismic attenuation via the melt-squirt mechanism. In light of these results, we conclude that prior observations of low seismic velocities with somewhat high quality factors beneath the East Pacific Rise and Southern California suggest that melt does not organize into elongate bands across much of the asthenosphere.

Seismic structure of the southern Cascadia subduction zone and accretionary prism north of the Mendocino triple junction

USGS Publications Warehouse

Gulick, S.P.S.; Meltzer, A.M.; Clarke, S.H.

1998-01-01

Four multichannel-seismic reflection profiles, collected as part of the Mendocino triple junction seismic experiment, image the toe of the southern Cascadia accretionary prism. Today, 250-600 m of sediment is subducting with the Gorda plate, and 1500-3200 m is accreting to the northern California margin. Faults imaged west and east of the deformation front show mixed structural vergence. A north-south trending, 20 km long portion of the central margin is landward vergent for the outer 6-8 km of the toe of the prism. This region of landward vergence exhibits no frontal thrust, is unusually steep and narrow, and is likely caused by a seaward-dipping backstop close to the deformation front. The lack of margin-wide preferred seaward vergence and wedge-taper analysis suggests the prism has low basal shear stress. The three southern lines image wedge-shaped fragments of oceanic crust 1.1-7.3 km in width and 250-700 m thick near the deformation front. These wedges suggest shortening and thickening of the upper oceanic crust. Discontinuities in the seafloor west of the prism provide evidence for mass wasting in the form of slump blocks and debris fans. The southernmost profile extends 75 km west of the prism imaging numerous faults that offset both the Gorda basin oceanic crust and overlying sediments. These high-angle faults, bounding basement highs, are interpreted as strike-slip faults reactivating structures originally formed at the spreading ridge. Northeast or northwest trending strike-slip faults within the basin are consistent with published focal mechanism solutions and are likely caused by north-south Gorda-Pacific plate convergence. Copyright 1998 by the American Geophysical Union.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

NASA Astrophysics Data System (ADS)

Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

2013-12-01

A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

Fabrication of photovoltaic laser energy converterby MBE

NASA Technical Reports Server (NTRS)

Lu, Hamilton; Wang, Scott; Chan, W. S.

1993-01-01

A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

Intercellular Diffusion of a Fluorescent Sucrose Analog via the Septal Junctions in a Filamentous Cyanobacterium

PubMed Central

Nürnberg, Dennis J.; Mariscal, Vicente; Bornikoel, Jan; Nieves-Morión, Mercedes; Krauß, Norbert; Herrero, Antonia

2015-01-01

ABSTRACT Many filamentous cyanobacteria produce specialized nitrogen-fixing cells called heterocysts, which are located at semiregular intervals along the filament with about 10 to 20 photosynthetic vegetative cells in between. Nitrogen fixation in these complex multicellular bacteria depends on metabolite exchange between the two cell types, with the heterocysts supplying combined-nitrogen compounds but dependent on the vegetative cells for photosynthetically produced carbon compounds. Here, we used a fluorescent tracer to probe intercellular metabolite exchange in the filamentous heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120. We show that esculin, a fluorescent sucrose analog, is incorporated by a sucrose import system into the cytoplasm of Anabaena cells. The cytoplasmic esculin is rapidly and reversibly exchanged across vegetative-vegetative and vegetative-heterocyst cell junctions. Our measurements reveal the kinetics of esculin exchange and also show that intercellular metabolic communication is lost in a significant fraction of older heterocysts. SepJ, FraC, and FraD are proteins located at the intercellular septa and are suggested to form structures analogous to gap junctions. We show that a ΔsepJ ΔfraC ΔfraD triple mutant shows an altered septum structure with thinner septa but a denser peptidoglycan layer. Intercellular diffusion of esculin and fluorescein derivatives is impaired in this mutant, which also shows a greatly reduced frequency of nanopores in the intercellular septal cross walls. These findings suggest that FraC, FraD, and SepJ are important for the formation of junctional structures that constitute the major pathway for feeding heterocysts with sucrose. PMID:25784700

Semiconductor cooling by thin-film thermocouples

NASA Technical Reports Server (NTRS)

Tick, P. A.; Vilcans, J.

1970-01-01

Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.

Effect of pH, Surfactant, and Heat Treatment on Morphology, Structure, and Hardness of Electrodeposited Co-P Coatings

NASA Astrophysics Data System (ADS)

Zeinali-Rad, M.; Allahkaram, S. R.; Mahdavi, S.

2015-09-01

Nano-crystalline and amorphous Co-P coatings were deposited on plain carbon steel substrates by using direct current. Effects of electrolyte pH on morphology, current efficiency, phosphorus content, hardness, and preferred orientation of the nano-crystalline coatings were investigated. Moreover, the effects of heat treatment on microstructure and hardness of the nano-crystalline and the amorphous coatings were studied. The results showed that, phosphorus content and hardness of the nano-crystalline coatings were decreased by increasing of the pH, in spite of a current efficiency enhancement to as much as 98%. Grain size and preferred orientation were also changed from 13 to 31 nm and from mostly [002] to [100] by increasing the pH from 1 to 4, respectively. Smoother coatings and higher current efficiencies were obtained by the addition of 1 g/L sodium dodecyl sulfate (SDS) to the bath. Highest hardness of the nano-crystalline and the amorphous coatings was about 600 and 750 HV, which increased and reached 760 and 1090 HV after heat treatment, respectively.

Experimental results of use of triple-energy X-ray beam with K-edge filter in multi-energy imaging

NASA Astrophysics Data System (ADS)

Kim, D.; Lee, S.; Jeon, P.-H.

2016-04-01

Multi-energy imaging is useful for contrast enhancement of lesions, quantitative analysis of specific materials and material separation in the human body. Generally, dual-energy methods are applied to discriminating two materials, but this method cannot discriminate more than two materials. Photon-counting detectors provide spectral information from polyenergetic X-rays using multiple energy bins. In this work, we developed triple-energy X-ray beams using a filter with K-edge energy and applied them experimentally. The energy spectra of triple-energy X-ray beams were assessed by using a spectrometer. The designed triple-energy X-ray beams were validated by measuring quantitative evaluations with mean energy ratio (MER), contrast variation ratio (CVR) and exposure efficiency (EE). Then, triple-energy X-ray beams were used to extract density map of three materials, iodine (I), aluminum (Al) and polymethyl methacrylate (PMMA). The results of the thickness density maps obtained with the developed triple-energy X-ray beams were compared to those acquired using the photon-counting method. As a result, it was found experimentally that the proposed triple-energy X-ray beam technique can separate the three materials as well as the photon-counting method.

A Triple Helix Strategy for Promoting SME Development: The Case of a Dried Banana Community Enterprise in Thailand

ERIC Educational Resources Information Center

Yuwawutto, Sauwapa; Smitinont, Thitapha; Charoenanong, Numtip; Yokakul, Nattaka; Chatratana, Sonchai; Zawdie, Girma

2010-01-01

This paper examines the university-industry-government relationship as a mechanism for enhancing the efficiency and competitiveness of small and medium-sized enterprises (SMEs). The case of a community enterprise producing dried banana products in the north of Thailand is used to demonstrate the significance of the Triple Helix model for business…

High-efficiency thermal switch based on topological Josephson junctions

NASA Astrophysics Data System (ADS)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.