Manufacturing polymer light emitting diode with high luminance efficiency by solution process

NASA Astrophysics Data System (ADS)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials.

PubMed

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-03

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9'-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9',9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

NASA Astrophysics Data System (ADS)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers.

PubMed

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

2015-08-12

Colloidal quantum dots (QDs) are emerging as true candidates for light-emitting diodes with ultrasaturated colors. Here, we combine CdSe/CdS dot-in-rod heterostructures and polar/polyelectrolytic conjugated polymers to demonstrate the first example of fully solution-based quantum dot light-emitting diodes (QD-LEDs) incorporating all-organic injection/transport layers with high brightness, very limited roll-off and external quantum efficiency as high as 6.1%, which is 20 times higher than the record QD-LEDs with all-solution-processed organic interlayers and exceeds by over 200% QD-LEDs embedding vacuum-deposited organic molecules.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

PubMed

Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

2012-07-02

Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhen, Aigong; Ma, Ping, E-mail: maping@semi.ac.cn; Zhang, Yonghui

2014-12-22

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal couldmore » improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically.« less

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

A flexible top-emitting organic light-emitting diode on steel foil

NASA Astrophysics Data System (ADS)

Xie, Zhiyuan; Hung, Liang-Sun; Zhu, Furong

2003-11-01

An efficient flexible top-emitting organic light-emitting diode (FTOLED) was developed on a thin steel foil. The FTOLED was constructed on the spin-on-glass (SOG)-coated steel substrate with an organic stack of NPB/Alq 3 sandwiched by a highly reflective Ag anode and a semitransparent Sm cathode. An ultrathin plasma-polymerized hydrocarbon film (CF X) was interposed between the Ag anode and the NPB layer to enhance hole-injection, and an additional Alq 3 layer was overlaid on the Sm cathode to increase light output. The FTOLED showed a peak efficiency of 4.4 cd/A higher than 3.7 cd/A of a convention NPB/Alq 3-based bottom-emitting OLED.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

PubMed

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

PubMed

Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

2014-09-03

Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

NASA Astrophysics Data System (ADS)

Wang, Min-Shuai; Huang, Xiao-Jing

2013-08-01

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal—organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashchenko, A. A.; Goriachiy, D. O., E-mail: goryachii@phystech.edu; Vitukhnovsky, A. G.

Experimental samples of organic light-emitting diodes with transport layers based on polythienothiophenes and using CdSe/CdS/ZnS semiconductor quantum dots with an internal quantum efficiency up to 85% in the emitting layer are investigated. It is shown that solubility and film-forming properties are key for using polythienothiophenes in light-emitting diodes. The most promising polythienothiophenes are identified on the basis of the results obtained.

Optical design of tunnel lighting with white light-emitting diodes.

PubMed

Tsai, Ming-Shiou; Lee, Xuan-Hao; Lo, Yi-Chien; Sun, Ching-Cherng

2014-10-10

This paper presents a tunnel lighting design consisting of a cluster light-emitting diode and a free-form lens. Most of the energy emitted from the proposed luminaire is transmitted onto the surface of the road in front of drivers, and the probability that that energy is emitted directly into drivers' eyes is low. Compared with traditional fluorescent lamps, the proposed luminaire, of which the optical utilization factor, optical efficiency, and uniformity are, respectively, 44%, 92.5%, and 0.72, exhibits favorable performance in energy saving, glare reduction, and traffic safety.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulationmore » results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.« less

Evaluation of Ho:KPb2Cl5 as a Diode-Pumpable Mid-IR Laser Material

DTIC Science & Technology

2016-09-01

is the decay of the upper laser level without emitting light , due to the simultaneous emission of enough lattice vibrational quanta (phonons) to...have an energy level spacing that can result in emission at the desired laser wavelength, and that state must emit light efficiently. It is also...extremely desirable that it absorb light in the wavelength region where laser diodes operate most efficiently, approximately 800–1000 nm. This enables

Weak-microcavity organic light-emitting diodes with improved light out-coupling.

PubMed

Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

2008-08-18

We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Purely organic electroluminescent material realizing 100% conversion from electricity to light

PubMed Central

Kaji, Hironori; Suzuki, Hajime; Fukushima, Tatsuya; Shizu, Katsuyuki; Suzuki, Katsuaki; Kubo, Shosei; Komino, Takeshi; Oiwa, Hajime; Suzuki, Furitsu; Wakamiya, Atsushi; Murata, Yasujiro; Adachi, Chihaya

2015-01-01

Efficient organic light-emitting diodes have been developed using emitters containing rare metals, such as platinum and iridium complexes. However, there is an urgent need to develop emitters composed of more abundant materials. Here we show a thermally activated delayed fluorescence material for organic light-emitting diodes, which realizes both approximately 100% photoluminescence quantum yield and approximately 100% up-conversion of the triplet to singlet excited state. The material contains electron-donating diphenylaminocarbazole and electron-accepting triphenyltriazine moieties. The typical trade-off between effective emission and triplet-to-singlet up-conversion is overcome by fine-tuning the highest occupied molecular orbital and lowest unoccupied molecular orbital distributions. The nearly zero singlet–triplet energy gap, smaller than the thermal energy at room temperature, results in an organic light-emitting diode with external quantum efficiency of 29.6%. An external quantum efficiency of 41.5% is obtained when using an out-coupling sheet. The external quantum efficiency is 30.7% even at a high luminance of 3,000 cd m−2. PMID:26477390

Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (24th) on May 29 - Jun 2, 2000 in Aegean Sea, Greece

DTIC Science & Technology

2000-06-02

Telecomunicazioni, Torino. Italy 1.30pm XIV.4 "The Reliability of AlGalnP Visible Light Emitting Diodes " D.V. MORGAN and I. Al-Ofi Cardiff University...XV.5 "Green SQW InGaN light - emitting diodes on Si( 111) by metalorganic vapor phase epitaxy" E. Feltin, S. Dalmasso, H. Lareche, B. Beaumont, P. de...effect on GaN-based high efficiency light emitting diodes of a surprisingly high density of TDs has led to considerable interest in determining their

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

PubMed

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering.

PubMed

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N; Mohammed, Omar F; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H; Bakr, Osman M

2016-10-01

A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX 3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

NASA Astrophysics Data System (ADS)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Blue phosphorescent organic light-emitting diodes using an exciplex forming co-host with the external quantum efficiency of theoretical limit.

PubMed

Shin, Hyun; Lee, Sunghun; Kim, Kwon-Hyeon; Moon, Chang-Ki; Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jang-Joo

2014-07-16

A high-efficiency blue-emitting organic light-emitting diode (OLED) approaching theoretical efficiency using an exciplex-forming co-host composed of N,N'-dicarbazolyl-3,5-benzene (mCP) and bis-4,6-(3,5-di-3-pyridylphenyl)- 2-methylpyrimidine (B3PYMPM) is fabricated. Iridium(III)bis[(4,6-difluorophenyl)- pyridinato-N,C2']picolinate (FIrpic) is used as the emitter, which turns out to have a preferred horizontal dipole orientation in the emitting layer. The OLED shows a maximum external quantum efficiency of 29.5% (a maximum current efficiency of 62.2 cd A(-1) ), which is in perfect agreement with the theoretical prediction. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis of the external and internal quantum efficiency of multi-emitter, white organic light emitting diodes

NASA Astrophysics Data System (ADS)

Furno, Mauro; Rosenow, Thomas C.; Gather, Malte C.; Lüssem, Björn; Leo, Karl

2012-10-01

We report on a theoretical framework for the efficiency analysis of complex, multi-emitter organic light emitting diodes (OLEDs). The calculation approach makes use of electromagnetic modeling to quantify the overall OLED photon outcoupling efficiency and a phenomenological description for electrical and excitonic processes. From the comparison of optical modeling results and measurements of the total external quantum efficiency, we obtain reliable estimates of internal quantum yield. As application of the model, we analyze high-efficiency stacked white OLEDs and comment on the various efficiency loss channels present in the devices.

Wheat Under LED's (Light Emitting Diodes)

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

White organic light emitting diodes with enhanced internal and external outcoupling for ultra-efficient light extraction and Lambertian emission.

PubMed

Bocksrocker, Tobias; Preinfalk, Jan Benedikt; Asche-Tauscher, Julian; Pargner, Andreas; Eschenbaum, Carsten; Maier-Flaig, Florian; Lemme, Uli

2012-11-05

White organic light emitting diodes (WOLEDs) suffer from poor outcoupling efficiencies. The use of Bragg-gratings to enhance the outcoupling efficiency is very promising for light extraction in OLEDs, but such periodic structures can lead to angular or spectral dependencies in the devices. Here we present a method which combines highly efficient outcoupling by a TiO(2)-Bragg-grating leading to a 104% efficiency enhancement and an additional high quality microlens diffusor at the substrate/air interface. With the addition of this diffusor, we achieved not only a uniform white emission, but also further increased the already improved device efficiency by another 94% leading to an overall enhancement factor of about 4.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

PubMed

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

NASA Astrophysics Data System (ADS)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

NASA Astrophysics Data System (ADS)

Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

2013-09-01

A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

PubMed Central

Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

2016-01-01

Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency −70 cd A−1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices. PMID:27187936

High-efficiency non-blocking phosphorescent organic light emitting diode with ultrathin emission layer

NASA Astrophysics Data System (ADS)

Qiu, Jacky; Helander, Michael G.; Wang, Zhibin; Chang, Yi-Lu; Lu, ZhengHong

2012-09-01

Non-blocking Phosphorescent Organic Light Emitting Diode (NB-PHOLED) is a highly simplified device structure that has achieved record high device performance on chlorinated ITO[1], flexible substrates[2], also with Pt based phosphorescent dopants[3] and NB-PHOLED has significantly reduced efficiency roll-off[4]. The principle novel features of NB-PHOLED is the absence of blocking layer in the OLED stack, as well as the absence of organic hole injection layer, this allows for reduction of carrier accumulation in between organic layers and result in higher efficiencies.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Inkjet-Printed Small-Molecule Organic Light-Emitting Diodes: Halogen-Free Inks, Printing Optimization, and Large-Area Patterning.

PubMed

Zhou, Lu; Yang, Lei; Yu, Mengjie; Jiang, Yi; Liu, Cheng-Fang; Lai, Wen-Yong; Huang, Wei

2017-11-22

Manufacturing small-molecule organic light-emitting diodes (OLEDs) via inkjet printing is rather attractive for realizing high-efficiency and long-life-span devices, yet it is challenging. In this paper, we present our efforts on systematical investigation and optimization of the ink properties and the printing process to enable facile inkjet printing of conjugated light-emitting small molecules. Various factors on influencing the inkjet-printed film quality during the droplet generation, the ink spreading on the substrates, and its solidification processes have been systematically investigated and optimized. Consequently, halogen-free inks have been developed and large-area patterning inkjet printing on flexible substrates with efficient blue emission has been successfully demonstrated. Moreover, OLEDs manufactured by inkjet printing the light-emitting small molecules manifested superior performance as compared with their corresponding spin-cast counterparts.

High-performance light-emitting diodes based on carbene-metal-amides

NASA Astrophysics Data System (ADS)

Di, Dawei; Romanov, Alexander S.; Yang, Le; Richter, Johannes M.; Rivett, Jasmine P. H.; Jones, Saul; Thomas, Tudor H.; Abdi Jalebi, Mojtaba; Friend, Richard H.; Linnolahti, Mikko; Bochmann, Manfred; Credgington, Dan

2017-04-01

Organic light-emitting diodes (OLEDs) promise highly efficient lighting and display technologies. We introduce a new class of linear donor-bridge-acceptor light-emitting molecules, which enable solution-processed OLEDs with near-100% internal quantum efficiency at high brightness. Key to this performance is their rapid and efficient utilization of triplet states. Using time-resolved spectroscopy, we establish that luminescence via triplets occurs within 350 nanoseconds at ambient temperature, after reverse intersystem crossing to singlets. We find that molecular geometries exist at which the singlet-triplet energy gap (exchange energy) is close to zero, so that rapid interconversion is possible. Calculations indicate that exchange energy is tuned by relative rotation of the donor and acceptor moieties about the bridge. Unlike other systems with low exchange energy, substantial oscillator strength is sustained at the singlet-triplet degeneracy point.

Efficient Light Extraction of Organic Light-Emitting Diodes on a Fully Solution-Processed Flexible Substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, Kwing; Liu, Xiaofeng; Zhao, Fangchao

A flexible, nanocomposite substrate for maximizing light outcoupling efficiencies of organic light-emitting diodes (OLEDs) is introduced. In depth investigation is performed on designing the integrated strategy based on considerations of surface conductivity, microcavity tuning, and internal light scattering. The resulting nanocomposite substrate consists of silver nanowires as the electrode and a high-index polymer layer and a light-scattering layer for light extraction. It is able to outcouple both the waveguide and the substrate modes, two modes accounting for significant losses in OLED device efficiency. With enhanced light outcoupling, white OLEDs subsequently fabricated on the nanocomposite substrates demonstrate performance metrics of 107more » lm W -1 power efficiency and 49% external quantum efficiency at 1000 cd m -2. Thus, the nanocomposite substrate is fabricated by solution processes at low temperatures for potentially low manufacturing cost.« less

Efficient Light Extraction of Organic Light-Emitting Diodes on a Fully Solution-Processed Flexible Substrate

DOE PAGES

Tong, Kwing; Liu, Xiaofeng; Zhao, Fangchao; ...

2017-07-18

A flexible, nanocomposite substrate for maximizing light outcoupling efficiencies of organic light-emitting diodes (OLEDs) is introduced. In depth investigation is performed on designing the integrated strategy based on considerations of surface conductivity, microcavity tuning, and internal light scattering. The resulting nanocomposite substrate consists of silver nanowires as the electrode and a high-index polymer layer and a light-scattering layer for light extraction. It is able to outcouple both the waveguide and the substrate modes, two modes accounting for significant losses in OLED device efficiency. With enhanced light outcoupling, white OLEDs subsequently fabricated on the nanocomposite substrates demonstrate performance metrics of 107more » lm W -1 power efficiency and 49% external quantum efficiency at 1000 cd m -2. Thus, the nanocomposite substrate is fabricated by solution processes at low temperatures for potentially low manufacturing cost.« less

Transparent organic light-emitting diodes with balanced white emission by minimizing waveguide and surface plasmonic loss.

PubMed

Zhang, Yi-Bo; Ou, Qing-Dong; Li, Yan-Qing; Chen, Jing-De; Zhao, Xin-Dong; Wei, Jian; Xie, Zhong-Zhi; Tang, Jian-Xin

2017-07-10

It is challenging in realizing high-performance transparent organic light-emitting diodes (OLEDs) with symmetrical light emission to both sides. Herein, an efficient transparent OLED with highly balanced white emission to both sides is demonstrated by integrating quasi-periodic nanostructures into the organic emitter and the metal-dielectric composite top electrode, which can simultaneously suppressing waveguide and surface plasmonic loss. The power efficiency and external quantum efficiency are raised to 83.5 lm W -1 and 38.8%, respectively, along with a bi-directional luminance ratio of 1.26. The proposed scheme provides a facile route for extending application scope of transparent OLEDs for future transparent displays and lightings.

Flip-chip light emitting diode with resonant optical microcavity

DOEpatents

Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

2005-11-29

A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative quenching (improved internal quantum efficiency) and improvement in light extraction (improved outcoupling efficiency). Furthermore, the electrical model is used to construct a positional radiative efficiency map that when combined with the optical enhancement reveals the overall external quantum efficiency enhancement.

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

Optimization of freeform lightpipes for light-emitting-diode projectors.

PubMed

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Optimization of freeform lightpipes for light-emitting-diode projectors

NASA Astrophysics Data System (ADS)

Fournier, Florian; Rolland, Jannick

2008-03-01

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Electroluminescent Properties in Organic Light-Emitting Diode Doped with Two Guest Dyes

NASA Astrophysics Data System (ADS)

Mori, Tatsuo; Kim, Hyeong-Gweon; Mizutani, Teruyoshi; Lee, Duck-Chool

2001-09-01

An organic light-emitting diode (OLED) with a squarylium dye-doped aluminium quinoline (Alq3) emission layer prepared by vapor deposition method has a pure red emission. However, since its luminance and electroluminescence (EL) efficiency is poor, the authors attended to improve the EL efficiency by doping a photosensitizer dye (a styryl dye, DCM) in an emission layer. The EL efficiency and luminance of DCM- and Sq-doped OLEDs are 2-3 times higher than those of only Sq-doped OLEDs. It was found that the excited energy is transferred from Alq3 to Sq through DCM.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Electroplex as a New Concept of Universal Host for Improved Efficiency and Lifetime in Red, Yellow, Green, and Blue Phosphorescent Organic Light‐Emitting Diodes

PubMed Central

Song, Wook; Cho, Yong Joo; Yu, Hyeonghwa; Aziz, Hany; Lee, Kang Mun

2017-01-01

Abstract A new concept of host, electroplex host, is developed for high efficiency and long lifetime phosphorescent organic light‐emitting diodes by mixing two host materials generating an electroplex under an electric field. A carbazole‐type host and a triazine‐type host are selected as the host materials to form the electroplex host. The electroplex host is found to induce light emission through an energy transfer process rather than charge trapping, and universally improves the lifetime of red, yellow, green, and blue phosphorescent organic light‐emitting diodes by more than four times. Furthermore, the electroplex host shows much longer lifetime than a common exciplex host. This is the first demonstration of using the electroplex as the host of high efficiency and long lifetime phosphorescent organic light‐emitting diodes. PMID:29610726

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

PubMed Central

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-01-01

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

PubMed

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-05-16

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

Methodological comparison on OLED and OLET fabrication

NASA Astrophysics Data System (ADS)

Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Characteristics of blue organic light emitting diodes with different thick emitting layers

NASA Astrophysics Data System (ADS)

Li, Chong; Tsuboi, Taiju; Huang, Wei

2014-08-01

We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

PubMed

Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

2014-01-27

Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. < 2.4 V for onset and < 3 V for 1000 cd/m2, and high efficiency of 32.5 lm/W (13.3%), 58.8 lm/W (14.3%), 55.1 lm/W (14.6%), 24.9 lm/W (13.7%) and 45.1 lm/W (13.5%) for blue, green, yellow, red and white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

Enhanced out-coupling efficiency of organic light-emitting diodes using an nanostructure imprinted by an alumina nanohole array

NASA Astrophysics Data System (ADS)

Endo, Kuniaki; Adachi, Chihaya

2014-03-01

We demonstrate organic light-emitting diodes (OLEDs) with enhanced out-coupling efficiency containing nanostructures imprinted by an alumina nanohole array template that can be applied to large-emitting-area and flexible devices using a roll-to-roll process. The nanostructures are imprinted on a glass substrate by an ultraviolet nanoimprint process using an alumina nanohole array mold and then an OLED is fabricated on the nanostructures. The enhancement of out-coupling efficiency is proportional to the root-mean-square roughness of the nanostructures, and a maximum improvement of external electroluminescence quantum efficiency of 17% is achieved. The electroluminescence spectra of the OLEDs indicate that this improvement is caused by enhancement of the out-coupling of surface plasmon polaritons.

Light-extraction enhancement for light-emitting diodes: a firefly-inspired structure refined by the genetic algorithm

NASA Astrophysics Data System (ADS)

Bay, Annick; Mayer, Alexandre

2014-09-01

The efficiency of light-emitting diodes (LED) has increased significantly over the past few years, but the overall efficiency is still limited by total internal reflections due to the high dielectric-constant contrast between the incident and emergent media. The bioluminescent organ of fireflies gave incentive for light-extraction enhance-ment studies. A specific factory-roof shaped structure was shown, by means of light-propagation simulations and measurements, to enhance light extraction significantly. In order to achieve a similar effect for light-emitting diodes, the structure needs to be adapted to the specific set-up of LEDs. In this context simulations were carried out to determine the best geometrical parameters. In the present work, the search for a geometry that maximizes the extraction of light has been conducted by using a genetic algorithm. The idealized structure considered previously was generalized to a broader variety of shapes. The genetic algorithm makes it possible to search simultaneously over a wider range of parameters. It is also significantly less time-consuming than the previous approach that was based on a systematic scan on parameters. The results of the genetic algorithm show that (1) the calculations can be performed in a smaller amount of time and (2) the light extraction can be enhanced even more significantly by using optimal parameters determined by the genetic algorithm for the generalized structure. The combination of the genetic algorithm with the Rigorous Coupled Waves Analysis method constitutes a strong simulation tool, which provides us with adapted designs for enhancing light extraction from light-emitting diodes.

Phosphorescence white organic light-emitting diodes with single emitting layer based on isoquinolinefluorene-carbazole containing host.

PubMed

Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Shin, Hyun Su; Lee, Kum Hee; Yoon, Seung Soo; Kim, Woo Young; Kim, Young Kwan

2013-03-01

We have demonstrated a stable phosphorescent white organic light-emitting diodes (WOLEDs) using an orange emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N) iridium(III)acetylacetonate [(Bz4Fppy)2Ir(III)acac] doped into a newly synthesized blue host material, 2-(carbazol-9-yl)-7-(isoquinolin-1-yl)-9,9-diethylfluorene (CzFliq). When 1 wt.% (Bz4Fppy)2Ir(III)acac was doped into emitting layer, it was realized an improved EL performance and a pure white color in the OLED. The optimum WOLED showed maximum values as a luminous efficiency of 10.14 cd/A, a power efficiency of 10.24 Im/W, a peak external quantum efficiency 4.07%, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39) at 8 V.

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

NASA Astrophysics Data System (ADS)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Highly efficient green phosphorescent organic light emitting diodes with improved efficiency roll-off

NASA Astrophysics Data System (ADS)

Thangaraju, K.; Lee, Jonghee; Lee, Jeong-Ik; Chu, Hye Yong; Kim, Yun-Hi; Kwon, Soon-Ki

2015-06-01

A 10-nm thick 4,4',4″-tris(carbazole-9-yl)tri-phenylamine (TcTa) interlayer effectively confines triplet excitons within the emissive layer (EML) of phosphorescent organic light emitting diodes (PHOLEDs) based on green-emitting Ir(ppy)3 dopant and improves the charge balance in the EML of the device, resulting the higher device efficiencies of 61.7 cd/A, 19.7 %, and 43.2 lm/W with the maximum luminance of 75,310 cd/m2 and highly improved efficiency roll-off (22.2% at 20 mA/cm2) when compared to those (61.1 cd/A, 19.6 %, and 47.2 lm/W with a maximum luminance of 38,350 cd/m2) of the standard device with efficiency roll-off of 62.3 % at 20 mA/cm2.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Poly (p-phenyleneneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei; Barton, Thomas J.; Vardeny, Zeev V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Poly (p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

1994-08-02

Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei

1994-08-02

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion

DOEpatents

Forrest, Stephen; Zhang, Yifan

2015-02-10

A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs.

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui; Liao, Liang-Sheng

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO2 film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

PubMed

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

NASA Astrophysics Data System (ADS)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

NASA Astrophysics Data System (ADS)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-01

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission.

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE PAGES

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-12

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation

PubMed Central

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Lai, Chao-Sung; Ying, Shang-Ping

2018-01-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts’ material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method. PMID:29494534

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation.

PubMed

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Tan, Cher Ming; Lai, Chao-Sung; Chow, Lee; Ying, Shang-Ping

2018-03-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts' material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method.

White polymeric light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Niu, Xiaodi; Ma, Liang; Yao, Bing; Ding, Junqiao; Tu, Guoli; Xie, Zhiyuan; Wang, Lixiang

2006-11-01

The efficient white polymeric light-emitting diodes based on a white emissive polymer doped with a red phosphorescent dopant were fabricated by spin-coating method. The emission spectrum of the device is broadened to cover the full visible region by doping the red phosphorescent dye and thereby realizes white emission with high color-rendering index (CRI). By controlling the contents of the doped electron-transporting 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole and the red phosphorescent dopant, a luminous efficiency as high as 5.3cd/A and a power efficiency of 3lm/W were obtained with a CRI of 92.

One-Step Borylation of 1,3-Diaryloxybenzenes Towards Efficient Materials for Organic Light-Emitting Diodes.

PubMed

Hirai, Hiroki; Nakajima, Kiichi; Nakatsuka, Soichiro; Shiren, Kazushi; Ni, Jingping; Nomura, Shintaro; Ikuta, Toshiaki; Hatakeyama, Takuji

2015-11-09

The development of a one-step borylation of 1,3-diaryloxybenzenes, yielding novel boron-containing polycyclic aromatic compounds, is reported. The resulting boron-containing compounds possess high singlet-triplet excitation energies as a result of localized frontier molecular orbitals induced by boron and oxygen. Using these compounds as a host material, we successfully prepared phosphorescent organic light-emitting diodes exhibiting high efficiency and adequate lifetimes. Moreover, using the present one-step borylation, we succeeded in the synthesis of an efficient, thermally activated delayed fluorescence emitter and boron-fused benzo[6]helicene. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solar-energy production and energy-efficient lighting: photovoltaic devices and white-light-emitting diodes using poly(2,7-fluorene), poly(2,7-carbazole), and poly(2,7-dibenzosilole) derivatives.

PubMed

Beaupré, Serge; Boudreault, Pierre-Luc T; Leclerc, Mario

2010-02-23

World energy needs grow each year. To address global warming and climate changes the search for renewable energy sources with limited greenhouse gas emissions and the development of energy-efficient lighting devices are underway. This Review reports recent progress made in the synthesis and characterization of conjugated polymers based on bridged phenylenes, namely, poly(2,7-fluorene)s, poly(2,7-carbazole)s, and poly(2,7-dibenzosilole)s, for applications in solar cells and white-light-emitting diodes. The main strategies and remaining challenges in the development of reliable and low-cost renewable sources of energy and energy-saving lighting devices are discussed.

Coumarin-Based Oxime Esters: Photobleachable and Versatile Unimolecular Initiators for Acrylate and Thiol-Based Click Photopolymerization under Visible Light-Emitting Diode Light Irradiation.

PubMed

Li, Zhiquan; Zou, Xiucheng; Zhu, Guigang; Liu, Xiaoya; Liu, Ren

2018-05-09

Developing efficient unimolecular visible light-emitting diode (LED) light photoinitiators (PIs) with photobleaching capability, which are essential for various biomedical applications and photopolymerization of thick materials, remains a great challenge. Herein, we demonstrate the synthesis of a series of novel PIs, containing coumarin moieties as chromophores and oxime ester groups as initiation functionalities and explore their structure-activity relationship. The investigated oxime esters can effectively induce acrylates and thiol-based click photopolymerization under 450 nm visible LED light irradiation. The initiator O-3 exhibited excellent photobleaching capability and enabled photopolymerization of thick materials (∼4.8 mm). The efficient unimolecular photobleachable initiators show great potential in dental materials and 3D printings.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Very low color-temperature organic light-emitting diodes for lighting at night

NASA Astrophysics Data System (ADS)

Jou, Jwo-Huei; Tang, Ming-Chun; Chen, Pin-Chu; Chen, Szu-Hao; Shen, Shih-Ming; Chen, Chien-Chih; Wang, Ching-Chiun; Chen, Chien-Tien

2011-12-01

Light sources with low color temperature (CT) are essential for their markedly less suppression effect on the secretion of melatonin, and high power efficiency is crucial for energy-saving. To provide visual comfort, the light source should also have a reasonably high color rendering index (CRI). In this report, we demonstrate the design and fabrication of low CT and high efficiency organic light-emitting diodes. The best resultant device exhibits a CT of 1,880 K, much lower than that of incandescent bulbs (2,000-2,500 K) and even as low as that of candles, (1,800-2,000 K), a beyond theoretical limit external quantum efficiency 22.7 %, and 36.0 lm/W at 100 cd/m 2. The high efficiency of the proposed device may be attributed to its interlayer, which helps effectively distribute the entering carriers into the available recombination zones.

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

PubMed

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NASA Astrophysics Data System (ADS)

Abbaszadeh, Davood; Nicolai, Herman T.; Crǎciun, N. Irina; Blom, Paul W. M.

2014-11-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N ,N ,N',N' tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict that a concentration of 5% HTU leads to an optimal efficiency for this blue-emitting polymer. However, experimentally an optimum performance is achieved for 10% TAD HTUs. Analysis of the transport and recombination shows that polymer light-emitting diodes with 5%, 7.5%, and 12.5% TAD units follow the predicted behavior. The enhanced performance of the polymer with 10% TAD originates from a decrease in the number of electron traps, which is typically a factor of three lower than the universal value found in many polymers. This reduced number of traps leads to a reduction of nonradiative recombination and exciton quenching at the cathode.

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

PubMed

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced light out-coupling efficiency of organic light-emitting diodes with an extremely low haze by plasma treated nanoscale corrugation.

PubMed

Hwang, Ju Hyun; Lee, Hyun Jun; Shim, Yong Sub; Park, Cheol Hwee; Jung, Sun-Gyu; Kim, Kyu Nyun; Park, Young Wook; Ju, Byeong-Kwon

2015-02-14

Extremely low-haze light extraction from organic light-emitting diodes (OLEDs) was achieved by utilizing nanoscale corrugation, which was simply fabricated with plasma treatment and sonication. The haze of the nanoscale corrugation for light extraction (NCLE) corresponds to 0.21% for visible wavelengths, which is comparable to that of bare glass. The OLEDs with NCLE showed enhancements of 34.19% in current efficiency and 35.75% in power efficiency. Furthermore, the OLEDs with NCLE exhibited angle-stable electroluminescence (EL) spectra for different viewing angles, with no change in the full width at half maximum (FWHM) and peak wavelength. The flexibility of the polymer used for the NCLE and plasma treatment process indicates that the NCLE can be applied to large and flexible OLED displays.

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

PubMed

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

Triplet exciton confinement for enhanced fluorescent organic light-emitting diodes using a co-host system

NASA Astrophysics Data System (ADS)

Yoo, Han Kyu; Lee, Ho Won; Lee, Song Eun; Kim, Young Kwan; Kim, Se Hyun; Yoon, Seung Soo; Park, Jaehoon

2016-05-01

In this work, the co-host system within an emitting layer (EML) consists of the host and triplet managing (TM) host materials. A set of EML structures was fabricated with various concentrations of the TM host (0, 10, 30, 50, and 70%). The TM host triplet energy level is lower than the energy levels of the host and the guest, which leads to a reduction in the triplet exciton density and the singlet-triplet annihilation of the guest. Blue fluorescent organic light-emitting diodes exhibit a maximum luminous efficiency (LE) and an external quantum efficiency (EQE) of 9.74 cd/A and 4.92%, respectively. In addition, the efficiency roll-off ratios of the LE and the EQE are 14.25 and 13.16%, respectively.

Lithium salt doped conjugated polymers as electron transporting materials for highly efficient blue polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Huang, Fei; Shih, Ping-I.; Liu, Michelle S.; Shu, Ching-Fong; Jen, Alex K.-Y.

2008-12-01

Highly efficient blue polymer light-emitting diodes (PLEDs) are fabricated using a conjugated polymer, poly[9,9-bis(2-(2-(2-diethanol-amino-ethoxy) ethoxy) ethyl) fluorene-alt-4, 4'-phenylether] as an electron transporting layer (ETL). It was found that the performance of these blue-emitting devices could be greatly improved if the ETL was doped with LiF or Li2CO3 salts. A bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] (picolinate) Ir(III) (FIrpic) complex based blue phosphorescent PLED exhibited a maximum luminance efficiency of 20.3 cd/A with a luminance of 1600 cd/m2 at the current density of 7.9 mA/cm2 and drive voltage of 8.0 V.

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

NASA Astrophysics Data System (ADS)

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo

2014-02-01

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m2 corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m2 and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

NASA Astrophysics Data System (ADS)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. (Abstract shortened by ProQuest.).

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

NASA Astrophysics Data System (ADS)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extremely Low Roll-Off and High Efficiency Achieved by Strategic Exciton Management in Organic Light-Emitting Diodes with Simple Ultrathin Emitting Layer Structure.

PubMed

Zhang, Tianmu; Shi, Changsheng; Zhao, Chenyang; Wu, Zhongbin; Chen, Jiangshan; Xie, Zhiyuan; Ma, Dongge

2018-03-07

Phosphorescent organic light-emitting diodes (OLEDs) possess the property of high efficiency but have serious efficiency roll-off at high luminance. Herein, we manufactured high-efficiency phosphorescent OLEDs with extremely low roll-off by effectively locating the ultrathin emitting layer (UEML) away from the high-concentration exciton formation region. The strategic exciton management in this simple UEML architecture greatly suppressed the exciton annihilation due to the expansion of the exciton diffusion region; thus, this efficiency roll-off at high luminance was significantly improved. The resulting green phosphorescent OLEDs exhibited the maximum external quantum efficiency of 25.5%, current efficiency of 98.0 cd A -1 , and power efficiency of 85.4 lm W -1 and still had 25.1%, 94.9 cd A -1 , and 55.5 lm W -1 at 5000 cd m -2 luminance, and retained 24.3%, 92.7 cd A -1 , and 49.3 lm W -1 at 10 000 cd m -2 luminance, respectively. Compared with the usual structures, the improvement demonstrated in this work displays potential value in applications.

Analysis of energy efficient highway lighting retrofits.

DOT National Transportation Integrated Search

2015-06-01

Solid state lighting technology is advancing rapidly to a point where light emitting diode (LED) lighting : systems can be viable replacements for existing lighting systems using high pressure sodium (HPS). The : present report summarizes analyses co...

Progress in Emission Efficiency of Organic Light-Emitting Diodes: Basic Understanding and Its Technical Application

NASA Astrophysics Data System (ADS)

Tsutsui, Tetsuo; Takada, Noriyuki

2013-11-01

The technical history of when and how the basic understanding of the emission efficiency of organic light-emitting diodes (OLEDs) was established over the last 50 years is described. At first, our understanding of emission efficiency in single-crystal and thin-film electroluminescence (EL) devices in the early stages before the Eastman-Kodak breakthrough, that is, the introduction of the concept of multilayer structures, is examined. Then our contemplation travels from the Eastman-Kodak breakthrough towards the presently widely accepted concept of emission efficiency. The essential issues concerning the emission efficiency of OLEDs are summarized to help readers to obtain a common understanding of OLED efficiency problems, and detailed discussions on the primary factors that determine emission efficiency are given. Finally, some comments on remaining issues are presented.

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

PubMed

Lee, Seok Jae; Koo, Ja Ryong; Lim, Dong Hwan; Park, Hye Rim; Kim, Young Kwan; Ha, Yunkyoung

2011-08-01

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Highly efficient phosphor-converted white organic light-emitting diodes with moderate microcavity and light-recycling filters.

PubMed

Cho, Sang-Hwan; Oh, Jeong Rok; Park, Hoo Keun; Kim, Hyoung Kun; Lee, Yong-Hee; Lee, Jae-Gab; Do, Young Rag

2010-01-18

We demonstrate the combined effects of a microcavity structure and light-recycling filters (LRFs) on the forward electrical efficiency of phosphor-converted white organic light-emitting diodes (pc-WOLEDs). The introduction of a single pair of low- and high-index layers (SiO(2)/TiO(2)) improves the blue emission from blue OLED and the insertion of blue-passing and yellow-reflecting LRFs enhances the forward yellow emission from the YAG:Ce(3+) phosphors layers. The enhancement of the luminous efficacy of the forward white emission is 1.92 times that of a conventional pc-WOLED with color coordinates of (0.34, 0.34) and a correlated color temperature of about 4800 K.

Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

PubMed

Chen, Shuming; Kwok, Hoi Sing

2010-01-04

Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

PubMed Central

Kim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon

2013-01-01

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting. PMID:24220259

Monolithic translucent BaMgAl 10O 17:Eu 2+ phosphors for laser-driven solid state lighting

DOE PAGES

Cozzan, Clayton; Brady, Michael J.; O’Dea, Nicholas; ...

2016-10-11

With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl 10O 17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). Lastly, the resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

FAST TRACK COMMUNICATION Host-free, yellow phosphorescent material in white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng

2010-11-01

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W-1 at a practical brightness of 1000 cd m-2 with Commission Internationale d'Echariage coordinates (CIEx,y) of (0.37, 0.47) was achieved.

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

NASA Astrophysics Data System (ADS)

Broell, Markus; Sundgren, Petrus; Rudolph, Andreas; Schmid, Wolfgang; Vogl, Anton; Behringer, Martin

2014-02-01

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Light Extraction From Solution-Based Processable Electrophosphorescent Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Krummacher, Benjamin C.; Mathai, Mathew; So, Franky; Choulis, Stelios; Choong, And-En, Vi

2007-06-01

Molecular dye dispersed solution processable blue emitting organic light-emitting devices have been fabricated and the resulting devices exhibit efficiency as high as 25 cd/A. With down-conversion phosphors, white emitting devices have been demonstrated with peak efficiency of 38 cd/A and luminous efficiency of 25 lm/W. The high efficiencies have been a product of proper tuning of carrier transport, optimization of the location of the carrier recombination zone and, hence, microcavity effect, efficient down-conversion from blue to white light, and scattering/isotropic remission due to phosphor particles. An optical model has been developed to investigate all these effects. In contrast to the common misunderstanding that light out-coupling efficiency is about 22% and independent of device architecture, our device data and optical modeling results clearly demonstrated that the light out-coupling efficiency is strongly dependent on the exact location of the recombination zone. Estimating the device internal quantum efficiencies based on external quantum efficiencies without considering the device architecture could lead to erroneous conclusions.

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

PubMed

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Effect of broad recombination zone in multiple quantum well structures on lifetime and efficiency of blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Seok Jae; Lee, Song Eun; Lee, Dong Hyung; Koo, Ja Ryong; Lee, Ho Won; Yoon, Seung Soo; Park, Jaehoon; Kim, Young Kwan

2014-10-01

Blue phosphorescent organic light-emitting diodes with multiple quantum well (MQW) structures (from one to four quantum wells) within an emitting layer (EML) are fabricated with charge control layers (CCLs) to control carrier movement. The distributed recombination zone and balanced charge carrier injection within EML are achieved through the MQW structure with CCLs. Remarkably, the half-decay lifetime of a blue device with three quantum wells, measured at an initial luminance of 500 cd/m2, is 3.5 times longer than that using a conventional structure. Additionally, the device’s efficiency improved. These results are explained with the effects of triplet exciton confinement and triplet-triplet annihilation within each EML.

Microcavity-Free Broadband Light Outcoupling Enhancement in Flexible Organic Light-Emitting Diodes with Nanostructured Transparent Metal-Dielectric Composite Electrodes.

PubMed

Xu, Lu-Hai; Ou, Qing-Dong; Li, Yan-Qing; Zhang, Yi-Bo; Zhao, Xin-Dong; Xiang, Heng-Yang; Chen, Jing-De; Zhou, Lei; Lee, Shuit-Tong; Tang, Jian-Xin

2016-01-26

Flexible organic light-emitting diodes (OLEDs) hold great promise for future bendable display and curved lighting applications. One key challenge of high-performance flexible OLEDs is to develop new flexible transparent conductive electrodes with superior mechanical, electrical, and optical properties. Herein, an effective nanostructured metal/dielectric composite electrode on a plastic substrate is reported by combining a quasi-random outcoupling structure for broadband and angle-independent light outcoupling of white emission with an ultrathin metal alloy film for optimum optical transparency, electrical conduction, and mechanical flexibility. The microcavity effect and surface plasmonic loss can be remarkably reduced in white flexible OLEDs, resulting in a substantial increase in the external quantum efficiency and power efficiency to 47.2% and 112.4 lm W(-1).

Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Bekele Fayisa, Gabisa; Lee, Jong Won; Kim, Jungsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2017-09-01

An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 × 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously.

The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates

NASA Astrophysics Data System (ADS)

Kao, Chien-Chih; Su, Yan-Kuin; Lin, Chuing-Liang; Chen, Jian-Jhong

2010-07-01

The nanopatterned sapphire substrates (NPSSs) with aspect ratio that varied from 2.00 to 2.50 were fabricated by nanoimprint lithography. We could improve the epitaxial film quality and enhance the light extraction efficiency by NPSS technique. In this work, the aspect ratio effects on the performances of GaN-based light-emitting diodes (LEDs) with NPSS were investigated. The light output enhancement of GaN-based LEDs with NPSS was increased from 11% to 27% as the aspect ratio of the NPSS increases from 2.00 to 2.50. Owing to the same improvement of crystalline quality by using various aspect ratios of NPSS, these results indicated that the aspect ratio of the NPSS is strongly related to the light extraction efficiency.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

PubMed Central

Jin, Jie; Mi, Chenziyi; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2017-01-01

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. PMID:29072611

Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo

Highlights: • A nitrogen implanted current-blocking layer was successfully demonstrated. • Light-extraction efficiency and radiant intensity was increased by more than 20%. • Ion implantation was successfully implemented in GaN based light-emitting diodes. - Abstract: GaN-based light emitting diodes (LEDs) with a nitrogen implanted current-blocking layer (CBL) were successfully demonstrated for improving the light extraction efficiency (LEE) and radiant intensity. The LEE and radiant intensity of the LEDs with a shallow implanted CBL with nitrogen was greatly increased by more than 20% compared to that of a conventional LED without the CBL due to an increase in the effective currentmore » path, which reduces light absorption at the thick p-pad electrode. Meanwhile, deep implanted CBL with a nitrogen resulted in deterioration of the LEE and radiant intensity because of formation of crystal damage, followed by absorption of the light generated at the multi-quantum well(MQW). These results clearly suggest that ion implantation method, which is widely applied in the fabrication of Si based devices, can be successfully implemented in the fabrication of GaN based LEDs by optimization of implanted depth.« less

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

PubMed

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Emulsion Synthesis of Size-Tunable CH3NH3PbBr3 Quantum Dots: An Alternative Route toward Efficient Light-Emitting Diodes.

PubMed

Huang, Hailong; Zhao, Fangchao; Liu, Lige; Zhang, Feng; Wu, Xian-gang; Shi, Lijie; Zou, Bingsuo; Pei, Qibing; Zhong, Haizheng

2015-12-30

We report a facile nonaqueous emulsion synthesis of colloidal halide perovskite quantum dots by controlled addition of a demulsifier into an emulsion of precursors. The size of resulting CH3NH3PbBr3 quantum dots can be tuned from 2 to 8 nm by varying the amount of demulsifier. Moreover, this emulsion synthesis also allows the purification of these quantum dots by precipitation from the colloidal solution and obtains solid-state powder which can be redissolved for thin film coating and device fabrication. The photoluminescence quantum yields of the quantum dots is generally in the range of 80-92%, and can be well-preserved after purification (∼80%). Green light-emitting diodes fabricated comprising a spin-cast layer of the colloidal CH3NH3PbBr3 quantum dots exhibited maximum current efficiency of 4.5 cd/A, power efficiency of 3.5 lm/W, and external quantum efficiency of 1.1%. This provides an alternative route toward high efficient solution-processed perovskite-based light-emitting diodes. In addition, the emulsion synthesis is versatile and can be extended for the fabrication of inorganic halide perovskite colloidal CsPbBr3 nanocrystals.

Improved performance of organic light-emitting diodes with MoO3 interlayer by oblique angle deposition.

PubMed

Liu, S W; Divayana, Y; Sun, X W; Wang, Y; Leck, K S; Demir, H V

2011-02-28

We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique by which MoO3 was deposited at oblique angles (θ) with respect to the surface normal. It was found that, without sacrificing the power efficiency of the device, the device current efficiency and external quantum efficiency were significantly enhanced at an oblique deposition angle of θ=60° for MoO3.

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Improved out-coupling efficiency of organic light emitting diodes fabricated on a TiO2 planarization layer with embedded Si oxide nanostructures

NASA Astrophysics Data System (ADS)

Sung, Young Hoon; Jung, Pil-Hoon; Han, Kyung-Hoon; Kim, Yang Doo; Kim, Jang-Joo; Lee, Heon

2017-10-01

In order to increase the out-coupling efficiency of organic light emitting diodes, conical Si oxide nanostructures were formed on a glass substrate using nanoimprint lithography with hydrogen silsesquioxane. Then, the substrate was planarized with TiO2 nanoparticles. Since TiO2 nanoparticles have a higher refractive index than Si oxide, the surface of substrate is physically flat, but optically undulated in a manner that enables optical scattering and suppression of total internal reflection. Subsequently, OLEDs formed on a substrate with nanostructured Si oxide and a TiO2 planarization layer exhibit a 25% increase in out-coupling efficiency by suppressing total internal reflection.

Light Emitting Diodes and Astronomical Environments: Results from in situ Field Measurements

NASA Astrophysics Data System (ADS)

Craine, Brian L.; Craine, Eric R.

2015-05-01

Light emitting diode (LED) light fixtures are rapidly becoming industry standards for outdoor lighting. They are promoted on the strength of long lifetimes (hence economic efficiencies), low power requirements, directability, active brightness controls, and energy efficiency. They also tend to produce spectral shifts that are undesirable in astronomical settings, but which can be moderated by filters. LED lighting for continuous roadway and parking lot lighting is particularly popular, and many communities are in the process of retrofitting Low Pressure Sodium (LPS) and other lights by tens of thousands of new LED fixtures at a time. What is the impact of this process on astronomical observatories and on dark skies upon which amateur astronomers rely? We bypass modeling and predictions to make actual measurements of these lights in the field. We report on original ground, airborne, and satellite observations of LED lights and discuss their light budgets, zenith angle functions, and impacts on observatory environs.

Flexible organic light-emitting diodes with enhanced light out-coupling efficiency fabricated on a double-sided nanotextured substrate.

PubMed

Luo, Yu; Wang, Chunhui; Wang, Li; Ding, Yucheng; Li, Long; Wei, Bin; Zhang, Jianhua

2014-07-09

High-efficiency organic light-emitting diodes (OLEDs) have generated tremendous research interest. One of the exciting possibilities of OLEDs is the use of flexible plastic substrates, which unfortunately have a mismatching refractive index compared with the conventional ITO anode and the air. To unlock the light loss on flexible plastic, we report a high-efficiency flexible OLED directly fabricated on a double-sided nanotextured polycarbonate substrate by thermal nanoimprint lithography. The template for the nanoimprint process is a replicate from a silica arrayed with nanopillars and fabricated by ICP etching through a SiO2 colloidal spheres mask. It has been shown that with the internal quasi-periodical scattering gratings the efficiency enhancement can reach 50% for a green light OLED, and with an external antireflection structure, the normal transmittance is increased from 89% to 94% for paraboloid-like pillars. The OLED directly fabricated on the double-sided nanotextured polycarbonate substrate has reached an enhancing factor of ∼2.8 for the current efficiency.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

PubMed

Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

2018-09-01

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

PubMed

Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

2017-06-14

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2018-01-01

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

Cost and energy-efficient (LED, induction and plasma) roadway lighting.

DOT National Transportation Integrated Search

2013-11-01

There is an increasing interest in using new lighting technologies such as light emitting diode (LED), Induction, and Plasma light sources : in roadway lighting. The most commonly claimed benefits of the new lighting systems include increased reliabi...

Deep Blue Phosphorescent Organic Light-Emitting Diodes with CIEy Value of 0.11 and External Quantum Efficiency up to 22.5.

PubMed

Li, Xiaoyue; Zhang, Juanye; Zhao, Zifeng; Wang, Liding; Yang, Hannan; Chang, Qiaowen; Jiang, Nan; Liu, Zhiwei; Bian, Zuqiang; Liu, Weiping; Lu, Zhenghong; Huang, Chunhui

2018-03-01

Organic light-emitting diodes (OLEDs) based on red and green phosphorescent iridium complexes are successfully commercialized in displays and solid-state lighting. However, blue ones still remain a challenge on account of their relatively dissatisfactory Commission International de L'Eclairage (CIE) coordinates and low efficiency. After analyzing the reported blue iridium complexes in the literature, a new deep-blue-emitting iridium complex with improved photoluminescence quantum yield is designed and synthesized. By rational screening host materials showing high triplet energy level in neat film as well as the OLED architecture to balance electron and hole recombination, highly efficient deep-blue-emission OLEDs with a CIE at (0.15, 0.11) and maximum external quantum efficiency (EQE) up to 22.5% are demonstrated. Based on the transition dipole moment vector measurement with a variable-angle spectroscopic ellipsometry method, the ultrahigh EQE is assigned to a preferred horizontal dipole orientation of the iridium complex in doped film, which is beneficial for light extraction from the OLEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes.

PubMed

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-06

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

PubMed Central

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments. PMID:28059148

All-solution processed transparent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

2015-11-01

In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

NASA Astrophysics Data System (ADS)

Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

2016-09-01

Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

A promising red-emitting phosphor for white-light-emitting diodes prepared by a modified solid-state reaction

NASA Astrophysics Data System (ADS)

Ren, Fuqiang; Chen, Donghua

2010-02-01

Using urea, boric acid and polyethylene glycol (PEG) as auxiliary reagents, the novel red-emitting phosphors Ca 19Zn 2 (PO 4) 14:Eu 3+ have been successfully synthesized by a modified solid-state reaction. Thermogravimetric (TG) analysis, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra were used to characterize the resulting phosphors. The dependence of the photoluminescence properties of Ca 19Zn 2 (PO 4) 14:Eu 3+ phosphors upon urea, boric acid and PEG concentration and the quadric-sintered temperature were investigated. Luminescent measurements showed that the phosphors can be efficiently excited by ultraviolet (UV) to visible region, emitting a red light with a peak wavelength of 616 nm. The material has potential application as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs).

Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

NASA Astrophysics Data System (ADS)

Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

2018-06-01

In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

DTIC Science & Technology

2016-03-31

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs Kassem Nabha1, Russel Ricker2, Rodney McGee1, Nick Waite1, John Prineas2, Sydney Provence2...infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In...circuit (RIIC) chips using flip-chip bonding. This established technology is called Hybrid-super-lattice light emitting diodes (Hybrid- SLEDS). In

Si light-emitting device in integrated photonic CMOS ICs

NASA Astrophysics Data System (ADS)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

Organic light-emitting diodes with a spacer enhanced exciplex emission

NASA Astrophysics Data System (ADS)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

Using copper substrate to enhance the thermal conductivity of top-emission organic light-emitting diodes for improving the luminance efficiency and lifetime

NASA Astrophysics Data System (ADS)

Tsai, Yu-Sheng; Wang, Shun-Hsi; Chen, Chuan-Hung; Cheng, Chien-Lung; Liao, Teh-Chao

2009-12-01

The influence of heat dissipation on the performances of organic light-emitting diode (OLED) is investigated by measuring junction temperature and by calculating the rate of heat flow. The calculated rate of heat flow reveals that the key factors include the thermal conductivity, the substrate thickness, and the UV glue. Moreover, the use of copper substrate can effectively dissipate the joule heat, which then reduces the temperature gradient. Finally, it is shown that the use of a high thermal conductivity thinner substrate can enhance the thermal conductivity of OLED and the luminance efficiency as well.

Side-emitting illuminators using LED sources

NASA Astrophysics Data System (ADS)

Zhao, Feng; Van Derlofske, John F.

2003-11-01

This study investigates illuminators composed of light emitting diode (LED) array sources and side-emitting light guides to provide efficient general illumination. Specifically, new geometries are explored to increase the efficiency of current systems while maintaining desired light distribution. LED technology is already successfully applied in many illumination applications, such as traffic signals and liquid crystal display (LCD) backlighting. It provides energy-efficient, small-package, long-life, and color-adjustable illumination. However, the use of LEDs in general illumination is still in its early stages. Current side-emitting systems typically use a light guide with light sources at one end, an end-cap surface at the other end, and light releasing sidewalls. This geometry introduces efficiency loss that can be as high as 40%. The illuminators analyzed in this study use LED array sources along the longitude of a light guide to increase the system efficiency. These new geometries also provide the freedom of elongating the system without sacrificing system efficiency. In addition, alternative geometries can be used to create white light with monochromatic LED sources. As concluded by this study, the side-emitting illuminators using LED sources gives the possibility of an efficient, distribution-controllable linear lighting system.

Color stable white phosphorescent organic light emitting diodes with red emissive electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wook Kim, Jin; Yoo, Seung Il; Sung Kang, Jin

2015-06-28

We analyzed the performance of multi-emissive white phosphorescent organic light-emitting diodes (PHOLEDs) in relation to various red emitting sites of hole and electron transport layers (HTL and ETL). The shift of the recombination zone producing stable white emission in PHOLEDs was utilized as luminance was increased with red emission in its electron transport layer. Multi-emissive white PHOLEDs including the red light emitting electron transport layer yielded maximum external quantum efficiency of 17.4% with CIE color coordinates (−0.030, +0.001) shifting only from 1000 to 10 000 cd/m{sup 2}. Additionally, we observed a reduction of energy loss in the white PHOLED via Ir(piq){submore » 3} as phosphorescent red dopant in electron transport layer.« less

Ultrahigh-efficiency solution-processed simplified small-molecule organic light-emitting diodes using universal host materials

PubMed Central

Han, Tae-Hee; Choi, Mi-Ri; Jeon, Chan-Woo; Kim, Yun-Hi; Kwon, Soon-Ki; Lee, Tae-Woo

2016-01-01

Although solution processing of small-molecule organic light-emitting diodes (OLEDs) has been considered as a promising alternative to standard vacuum deposition requiring high material and processing cost, the devices have suffered from low luminous efficiency and difficulty of multilayer solution processing. Therefore, high efficiency should be achieved in simple-structured small-molecule OLEDs fabricated using a solution process. We report very efficient solution-processed simple-structured small-molecule OLEDs that use novel universal electron-transporting host materials based on tetraphenylsilane with pyridine moieties. These materials have wide band gaps, high triplet energy levels, and good solution processabilities; they provide balanced charge transport in a mixed-host emitting layer. Orange-red (~97.5 cd/A, ~35.5% photons per electron), green (~101.5 cd/A, ~29.0% photons per electron), and white (~74.2 cd/A, ~28.5% photons per electron) phosphorescent OLEDs exhibited the highest recorded electroluminescent efficiencies of solution-processed OLEDs reported to date. We also demonstrate a solution-processed flexible solid-state lighting device as a potential application of our devices. PMID:27819053

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Strong enhancement of emission efficiency in GaN light-emitting diodes by plasmon-coupled light amplification of graphene

NASA Astrophysics Data System (ADS)

Kim, Jong Min; Kim, Sung; Hwang, Sung Won; Kim, Chang Oh; Shin, Dong Hee; Kim, Ju Hwan; Jang, Chan Wook; Kang, Soo Seok; Hwang, Euyheon; Choi, Suk-Ho; El-Gohary, Sherif H.; Byun, Kyung Min

2018-02-01

Recently, we have demonstrated that excitation of plasmon-polaritons in a mechanically-derived graphene sheet on the top of a ZnO semiconductor considerably enhances its light emission efficiency. If this scheme is also applied to device structures, it is then expected that the energy efficiency of light-emitting diodes (LEDs) increases substantially and the commercial potential will be enormous. Here, we report that the plasmon-induced light coupling amplifies emitted light by ˜1.6 times in doped large-area chemical-vapor-deposition-grown graphene, which is useful for practical applications. This coupling behavior also appears in GaN-based LEDs. With AuCl3-doped graphene on Ga-doped ZnO films that is used as transparent conducting electrodes for the LEDs, the average electroluminescence intensity is 1.2-1.7 times enhanced depending on the injection current. The chemical doping of graphene may produce the inhomogeneity in charge densities (i.e., electron/hole puddles) or roughness, which can play a role as grating couplers, resulting in such strong plasmon-enhanced light amplification. Based on theoretical calculations, the plasmon-coupled behavior is rigorously explained and a method of controlling its resonance condition is proposed.

Electrode quenching control for highly efficient CsPbBr3 perovskite light-emitting diodes via surface plasmon resonance and enhanced hole injection by Au nanoparticles.

PubMed

Meng, Yan; Wu, Xiaoyan; Xiong, Ziyang; Lin, Chunyan; Xiong, Zuhong; Blount, Ethan; Chen, Ping

2018-04-27

Compared to organic-inorganic hybrid metal halide perovskites, all-inorganic cesium lead halides (e.g, CsPbBr 3 ) hold greater promise in being emissive materials for light-emitting diodes owing to their superior optoelectronic properties as well as their higher stabilities. However, there is still considerable potential for breakthroughs in the current efficiency of CsPbBr 3 perovskite light-emitting diodes (PeLEDs). Electrode quenching is one of the main problems limiting the current efficiency of PeLEDs when poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) is used as the hole injection layer. In this work, electrode quenching control was realized via incorporating Au NPs into PEDOT:PSS. As a result, the CsPbBr 3 PeLEDs realized an improvement in maximum luminescence ranging from ∼2348 to ∼7660 cd m -2 (∼226% enhancement) and current efficiency from 1.65 to 3.08 cd A -1 (∼86% enhancement). Such substantial enhancement of the electroluminescent performance can be attributed to effective electrode quenching control at the PEDOT:PSS/CsPbBr 3 perovskite interface via the combined effects of local surface plasma resonance coupling and enhanced hole transportation in the PEDOT:PSS layer by Au nanoparticles.

Electrode quenching control for highly efficient CsPbBr3 perovskite light-emitting diodes via surface plasmon resonance and enhanced hole injection by Au nanoparticles

NASA Astrophysics Data System (ADS)

Meng, Yan; Wu, Xiaoyan; Xiong, Ziyang; Lin, Chunyan; Xiong, Zuhong; Blount, Ethan; Chen, Ping

2018-04-01

Compared to organic-inorganic hybrid metal halide perovskites, all-inorganic cesium lead halides (e.g, CsPbBr3) hold greater promise in being emissive materials for light-emitting diodes owing to their superior optoelectronic properties as well as their higher stabilities. However, there is still considerable potential for breakthroughs in the current efficiency of CsPbBr3 perovskite light-emitting diodes (PeLEDs). Electrode quenching is one of the main problems limiting the current efficiency of PeLEDs when poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) is used as the hole injection layer. In this work, electrode quenching control was realized via incorporating Au NPs into PEDOT:PSS. As a result, the CsPbBr3 PeLEDs realized an improvement in maximum luminescence ranging from ˜2348 to ˜7660 cd m-2 (˜226% enhancement) and current efficiency from 1.65 to 3.08 cd A-1 (˜86% enhancement). Such substantial enhancement of the electroluminescent performance can be attributed to effective electrode quenching control at the PEDOT:PSS/CsPbBr3 perovskite interface via the combined effects of local surface plasma resonance coupling and enhanced hole transportation in the PEDOT:PSS layer by Au nanoparticles.

Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

NASA Astrophysics Data System (ADS)

Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

2015-01-01

We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

A single blue nanorod light emitting diode.

PubMed

Hou, Y; Bai, J; Smith, R; Wang, T

2016-05-20

We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

NASA Astrophysics Data System (ADS)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

Organic Light-Emitting Diodes Using Multifunctional Phosphorescent Dendrimers with Iridium-Complex Core and Charge-Transporting Dendrons

NASA Astrophysics Data System (ADS)

Tsuzuki, Toshimitsu; Shirasawa, Nobuhiko; Suzuki, Toshiyasu; Tokito, Shizuo

2005-06-01

We report a novel class of light-emitting materials for use in organic light-emitting diodes (OLEDs): multifunctional phosphorescent dendrimers that have a phosphorescent core and dendrons based on charge-transporting building blocks. We synthesized first-generation and second-generation dendrimers consisting of a fac-tris(2-phenylpyridine)iridium [Ir(ppy)3] core and hole-transporting phenylcarbazole-based dendrons. Smooth amorphous films of these dendrimers were formed by spin-coating them from solutions. The OLEDs using the dendrimer exhibited bright green or yellowish-green emission from the Ir(ppy)3 core. The OLEDs using the film containing a mixture of the dendrimer and an electron-transporting material exhibited higher efficiency than those using the neat dendrimer film. The external quantum efficiency of OLEDs using the film containing a mixture of the first-generation dendrimer and an electron-transporting material was as high as 7.6%.

Highly efficient and stable organic light-emitting diodes with a greatly reduced amount of phosphorescent emitter

PubMed Central

Fukagawa, Hirohiko; Shimizu, Takahisa; Kamada, Taisuke; Yui, Shota; Hasegawa, Munehiro; Morii, Katsuyuki; Yamamoto, Toshihiro

2015-01-01

Organic light-emitting diodes (OLEDs) have been intensively studied as a key technology for next-generation displays and lighting. The efficiency of OLEDs has improved markedly in the last 15 years by employing phosphorescent emitters. However, there are two main issues in the practical application of phosphorescent OLEDs (PHOLEDs): the relatively short operational lifetime and the relatively high cost owing to the costly emitter with a concentration of about 10% in the emitting layer. Here, we report on our success in resolving these issues by the utilization of thermally activated delayed fluorescent materials, which have been developed in the past few years, as the host material for the phosphorescent emitter. Our newly developed PHOLED employing only 1 wt% phosphorescent emitter exhibits an external quantum efficiency of over 20% and a long operational lifetime of about 20 times that of an OLED consisting of a conventional host material and 1 wt% phosphorescent emitter. PMID:25985084

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

PubMed

Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

2015-07-28

We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

NASA Astrophysics Data System (ADS)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

PubMed Central

Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.

2017-01-01

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs. PMID:29156543

Optimization of hybrid blue organic light-emitting diodes based on singlet and triplet exciton diffusion length

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Lee, Jae Woo; Hwang, Kyo Min; Park, Soo Na; Yoon, Seung Soo; Kim, Young Kwan

2015-06-01

The hybrid blue organic light-emitting diodes (HB OLEDs) with triplet harvesting (TH) structures within an emitting layer (EML) are fabricated with fluorescent and phosphorescent EMLs. The TH is to transfer triplet excitons from fluorescence to phosphorescence, where they can decay radiatively. Remarkably, the half-decay lifetime of a hybrid blue device with fluorescent and phosphorescent EML thickness of 5 and 25 nm, measured at an initial luminance of 500 cd/m2, has improved twice than that of using a conventional structure. Additionally, the blue device’s efficiency improved. We attribute this improvement to the efficient triplet excitons energy transfer and the optimized distribution of the EML which depends on singlet and triplet excitons diffusion length that occurs within each the EML.

Design Considerations for a Water Treatment System Utilizing Ultra-Violet Light Emitting Diodes

DTIC Science & Technology

2014-03-27

DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...the United States. ii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...DISTRIBUTION UNLIMITED. iii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Axial diffusion barriers in near-infrared nanopillar LEDs.

PubMed

Scofield, Adam C; Lin, Andrew; Haddad, Michael; Huffaker, Diana L

2014-11-12

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

Enhanced light out-coupling efficiency of organic light-emitting diodes with an extremely low haze by plasma treated nanoscale corrugation

NASA Astrophysics Data System (ADS)

Hwang, Ju Hyun; Lee, Hyun Jun; Shim, Yong Sub; Park, Cheol Hwee; Jung, Sun-Gyu; Kim, Kyu Nyun; Park, Young Wook; Ju, Byeong-Kwon

2015-01-01

Extremely low-haze light extraction from organic light-emitting diodes (OLEDs) was achieved by utilizing nanoscale corrugation, which was simply fabricated with plasma treatment and sonication. The haze of the nanoscale corrugation for light extraction (NCLE) corresponds to 0.21% for visible wavelengths, which is comparable to that of bare glass. The OLEDs with NCLE showed enhancements of 34.19% in current efficiency and 35.75% in power efficiency. Furthermore, the OLEDs with NCLE exhibited angle-stable electroluminescence (EL) spectra for different viewing angles, with no change in the full width at half maximum (FWHM) and peak wavelength. The flexibility of the polymer used for the NCLE and plasma treatment process indicates that the NCLE can be applied to large and flexible OLED displays.Extremely low-haze light extraction from organic light-emitting diodes (OLEDs) was achieved by utilizing nanoscale corrugation, which was simply fabricated with plasma treatment and sonication. The haze of the nanoscale corrugation for light extraction (NCLE) corresponds to 0.21% for visible wavelengths, which is comparable to that of bare glass. The OLEDs with NCLE showed enhancements of 34.19% in current efficiency and 35.75% in power efficiency. Furthermore, the OLEDs with NCLE exhibited angle-stable electroluminescence (EL) spectra for different viewing angles, with no change in the full width at half maximum (FWHM) and peak wavelength. The flexibility of the polymer used for the NCLE and plasma treatment process indicates that the NCLE can be applied to large and flexible OLED displays. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06547f

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

PubMed Central

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-01-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure.

PubMed

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-12

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

NASA Astrophysics Data System (ADS)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

PubMed

Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

2017-02-01

The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A.; Shamirzaev, T. S.

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensitymore » but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.« less

An efficient continuous-wave 591 nm light source based on sum-frequency mixing of a diode pumped Nd:GdVO4-Nd:CNGG laser

NASA Astrophysics Data System (ADS)

Zhao, Y. D.; Liu, J. H.

2013-08-01

We report a laser architecture to obtain continuous-wave (CW) yellow-orange light sources at the 591 nm wavelength. An 808 nm diode pumped a Nd:GdVO4 crystal emitting at 1063 nm. A part of the pump power was then absorbed by the Nd:CNGG crystal. The remaining pump power was used to pump a Nd:CNGG crystal emitting at 1329 nm. Intracavity sum-frequency mixing at 1063 and 1329 nm was then realized in a LiB3O5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 494 mW at 591 nm with a pump laser diode emitting 17.8 W at 808 nm.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Taewoong; Seong, Tae-Yeon; School of Materials Science and Engineering, Korea University, Seoul 136-713

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region.more » This is because electron leakage increases with increases in current density.« less

Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

NASA Astrophysics Data System (ADS)

Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

2013-05-01

The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

A white organic light emitting diode based on anthracene-triphenylamine derivatives

NASA Astrophysics Data System (ADS)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Organic light-emitting diodes using novel embedded al gird transparent electrodes

NASA Astrophysics Data System (ADS)

Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

2017-03-01

This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

Optical Analysis of Power Distribution in Top-Emitting Organic Light Emitting Diodes Integrated with Nanolens Array Using Finite Difference Time Domain.

PubMed

Han, Kyung-Hoon; Park, Young-Sam; Cho, Doo-Hee; Han, Yoonjay; Lee, Jonghee; Yu, Byounggon; Cho, Nam Sung; Lee, Jeong-Ik; Kim, Jang-Joo

2018-06-06

Recently, we have addressed that a formation mechanism of a nanolens array (NLA) fabricated by using a maskless vacuum deposition is explained as the increase in surface tension of organic molecules induced by their crystallization. Here, as another research using finite difference time domain simulations, not electric field intensities but transmitted energies of electromagnetic waves inside and outside top-emitting blue organic light-emitting diodes (TOLEDs), without and with NLAs, are obtained, to easily grasp the effect of NLA formation on the light extraction of TOLEDs. Interestingly, the calculations show that NLA acts as an efficient light extraction structure. With NLA, larger transmitted energies in the direction from emitting layer to air are observed, indicating that NLAs send more light to air otherwise trapped in the devices by reducing the losses by waveguide and absorption. This is more significant for higher refractive index of NLA. Simulation and measurement results are consistent. A successful increase in both light extraction efficiency and color stability of blue TOLEDs, rarely reported before, is accomplished by introducing the highly process-compatible NLA technology using the one-step dry process. Blue TOLEDs integrated with a N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine NLA with a refractive index of 1.8 show a 1.55-times-higher light extraction efficiency, compared to those without it. In addition, viewing angle characteristics are enhanced and image blurring is reduced, indicating that the manufacturer-adaptable technology satisfies the requirements of highly efficient and color-stable top-emission displays.

LEDs are on a roll

NASA Astrophysics Data System (ADS)

Blom, Paul; van Mol, Ton

2011-11-01

Light-emitting diodes are more efficient than conventional lighting, but high production costs limit their uptake. Organic versions that can be produced using a cheap newspaper-style "roll-to-roll" printing process are likely to revolutionize our lighting and signage.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

Highly efficient blue- and white-organic light emitting diodes base on triple-emitting layer.

PubMed

Shin, Hyun Su; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Kim, Woo Young; Yoon, Seung Soo; Kim, Young Kwan

2013-12-01

We have demonstrated highly efficient blue phosphorescent organic light-emitting diodes (PHOLEDs) using iridium (III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate (Flrpic) doped in three kinds of host materials, such as 9-(4-(triphenylsilyl)phenyl)-9H-carbazole (SPC), N,N'-dicarbazolyl-3,5-benzene (mCP), and 2,2',2"-(1,3,5-benzenetriyl)tris-[1-phenyl-1H-benzimidazole] (TPBi) as triple-emitting layer (T-EML). The properties of device with T-EML using the stepwise structure was found to be superior to the other blue PHOLEDs and exhibited a maximum luminous efficiency of 23.02 cd/A, a maximum external quantum efficiency of 11.09%, and a maximum power efficiency of 14.89 lm/W, respectively. An optimal blue device has improving charge balance and triplet excitons confinement within emitting layers (EMLs) each. Additionally, we also fabricated white PHOLED using a phosphorescent red dopant, bis(2-phenylquinolinato)-acetylacetonate iridium III (Ir(pq)2acac) doped in mCP and TPBi between blue EMLs. The properties of white PHOLED showed a maximum luminous efficiency and a maximum external quantum efficiency of 33.03 cd/A and 16.95%, respectively. It also showed the white emission with CIEx,y coordinates of (x = 0.36, y = 0.39) at 10 V.

Red phosphorescent organic light-emitting diodes based on the simple structure.

PubMed

Seo, Ji Hyun; Lee, Seok Jae; Kim, Bo Young; Choi, Eun Young; Han, Wone Keun; Lee, Kum Hee; Yoon, Seung Soo; Kim, Young Kwan

2012-05-01

We demonstrated that the simple layered red phosphorescent organic light-emitting diodes (OLEDs) are possible to have high efficiency, low driving voltage, stable roll-off efficiency, and pure emission color without hole injection and transport layers. We fabricated the OLEDs with a structure of ITO/CBP doped with Ir(pq)2(acac)/BPhen/Liq/Al, where the doping concentration of red dopant, Ir(pq)2(acac), was varied from 4% to 20%. As a result, the quantum efficiencies of 13.4, 11.2, 16.7, 10.8 and 9.8% were observed in devices with doping concentrations of 4, 8, 12, 16 and 20%, respectively. Despite of absence of the hole injection and transport layers, these efficiencies are superior to efficiencies of device with hole transporting layer due to direct hole injection from anode to dopant in emission layer.

Efficient Green Emission from Wurtzite Al xIn1- xP Nanowires.

PubMed

Gagliano, L; Kruijsse, M; Schefold, J D D; Belabbes, A; Verheijen, M A; Meuret, S; Koelling, S; Polman, A; Bechstedt, F; Haverkort, J E M; Bakkers, E P A M

2018-06-13

Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al x In 1- x P nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al x In 1- x P using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Recent advances in light outcoupling from white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Gather, Malte C.; Reineke, Sebastian

2015-01-01

Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically <30%). Here, we provide an introduction to the underlying physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

Efficient white-light-emitting diodes based on poly(N-vinylcarbazole) doped with blue fluorescent and orange phosphorescent materials

NASA Astrophysics Data System (ADS)

Shih, Ping-I.; Shu, Ching-Fong; Tung, Yung-Liang; Chi, Yun

2006-06-01

We have fabricated polymer white-light-emitting devices possessing a single emitting layer containing a hole-transporting host polymer, poly(N-vinylcarbazole), and an electron-transporting auxiliary, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, doped with a blue-light-emitting amino-substituted distyrylarylene fluorescent dye and an orange-light-emitting osmium phosphor. The doubly doped device exhibited an intense white emission having Commission Internationale de l'Eclairage coordinates of (0.33, 0.34), a high external quantum efficiency of 6.12% (13.2cd/A), and a maximum brightness of 11306cd/m2. The color coordinates remained unchanged over a range of operating voltages, even at luminance as high as 1×104cd/m2.

High-brightness and high-color purity red-emitting Ca3Lu(AlO)3(BO3)4:Eu3+ phosphors with internal quantum efficiency close to unity for near-ultraviolet-based white-light-emitting diodes.

PubMed

Huang, Xiaoyong; Wang, Shaoying; Li, Bin; Sun, Qi; Guo, Heng

2018-03-15

In this work, we reported on high-brightness Eu 3+ -activated Ca 3 Lu(AlO) 3 (BO 3 ) 4 (CLAB) red-emitting phosphors. Under 397 nm excitation, the CLAB:Eu 3+ phosphors showed intense red emissions at around 621 nm with CIE coordinates of (0.657, 0.343). The optimal doping concentration of Eu 3+ ions was found to be 30 mol. %, and the CLAB:0.3Eu 3+ sample possessed high-color purity of 93% and ultra-high internal quantum efficiency as great as 98.5%. Importantly, the CLAB:0.3Eu 3+ also had good thermal stability. Finally, a white-light-emitting diode (WLED) lamp with good color-rendering index was fabricated by using a 365 nm ultraviolet chip and the phosphor blends of CLAB:0.3Eu 3+ red-emitting phosphors, (Ba,Sr) 2 SiO 4 :Eu 2+ green-emitting phosphors, and BaMgAl 10 O 7 :Eu 2+ blue-emitting phosphors.

Exciplex-triplet energy transfer: A new method to achieve extremely efficient organic light-emitting diode with external quantum efficiency over 30% and drive voltage below 3 V

NASA Astrophysics Data System (ADS)

Seo, Satoshi; Shitagaki, Satoko; Ohsawa, Nobuharu; Inoue, Hideko; Suzuki, Kunihiko; Nowatari, Hiromi; Yamazaki, Shunpei

2014-04-01

A novel approach to enhance the power efficiency of an organic light-emitting diode (OLED) by employing energy transfer from an exciplex to a phosphorescent emitter is reported. It was found that excitation energy of an exciplex formed between an electron-transporting material with a π-deficient quinoxaline moiety and a hole-transporting material with aromatic amine structure can be effectively transferred to a phosphorescent iridium complex in an emission layer of a phosphorescent OLED. Moreover, such an exciplex formation increases quantum efficiency and reduces drive voltage. A highly efficient, low-voltage, and long-life OLED based on this energy transfer is also demonstrated. This OLED device exhibited extremely high external quantum efficiency of 31% even without any attempt to enhance light outcoupling and also achieved a low drive voltage of 2.8 V and a long lifetime of approximately 1,000,000 h at a luminance of 1,000 cd/m2.

Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method

NASA Astrophysics Data System (ADS)

Pingbo, An; Li, Wang; Hongxi, Lu; Zhiguo, Yu; Lei, Liu; Xin, Xi; Lixia, Zhao; Junxi, Wang; Jinmin, Li

2016-06-01

The internal quantum efficiency (IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency (EQE) and the light extraction efficiency (LEE). The EQE can be measured experimentally, but the LEE is difficult to calculate due to the complicated LED structures. In this work, a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method. With the calculated LEE, the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method. The proposed method makes the determination of the IQE more practical and conventional. Project supported by the National Natural Science Foundation of China (Nos.11574306, 61334009), the China International Science and Technology Cooperation Program (No. 2014DFG62280), and the National High Technology Program of China (No. 2015AA03A101).

1,3,4-Oxadiazole containing silanes as novel hosts for blue phosphorescent organic light emitting diodes.

PubMed

Leung, Man-kit; Yang, Wan-Hsi; Chuang, Ching-Nan; Lee, Jiun-Haw; Lin, Chi-Feng; Wei, Mao-Kuo; Liu, Yu-Hao

2012-10-05

Five rigid oxadiazole (OXD) containing silanes, denoted 1-5, have been developed with high morphological stability. Disruption of the π-aromatic conjugation by introduction of Si atoms leads to a large band gap and high triplet energy. Among the OXDs we studied, 2,5-bis(triphenylsilylphenyl)-1,3,4-oxadiazole 5 is the best host for FIrpic, with a phosphorescent organic light emitting diode (PHOLED) turn-on voltage of 6.9 V, maximum luminance of 5124 cd/m(2), current efficiency of 39.9 cd/A, and external quantum efficiency of 13.1%. Special molecular stacking in the single crystal of 5 was discussed.

Cyclometalated Iridium(III) Carbene Phosphors for Highly Efficient Blue Organic Light-Emitting Diodes.

PubMed

Chen, Zhao; Wang, Liqi; Su, Sikai; Zheng, Xingyu; Zhu, Nianyong; Ho, Cheuk-Lam; Chen, Shuming; Wong, Wai-Yeung

2017-11-22

Five deep blue carbene-based iridium(III) phosphors were synthesized and characterized. Interestingly, one of them can be fabricated into deep blue, sky blue and white organic light-emitting diodes (OLEDs) through changing the host materials and exciton blocking layers. These deep and sky blue devices exhibit Commission Internationale de l'Éclairage (CIE) coordinates of (0.145, 0.186) and (0.152, 0.277) with external quantum efficiency (EQE) of 15.2% and 9.6%, respectively. The EQE of the deep blue device can be further improved up to 19.0% by choosing a host with suitable energy level of its lowest unoccupied molecular orbital (LUMO).

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quan, Zhijue, E-mail: quanzhijue@ncu.edu.cn; Wang, Li, E-mail: wl@ncu.edu.cn; Zheng, Changda

2014-11-14

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

Ultrafast Self-Crystallization of High-External-Quantum-Efficient Fluoride Phosphors for Warm White Light-Emitting Diodes.

PubMed

Zhou, Wenli; Fang, Mu-Huai; Lian, Shixun; Liu, Ru-Shi

2018-05-30

In this study, we used HF (as good solvent) to dissolve K 2 GeF 6 and K 2 MnF 6 and added ethanol (as poor solvent) to cause ultrafast self-crystallization of K 2 GeF 6 :Mn 4+ crystals, which had an unprecedentedly high external quantum efficiency that reached 73%. By using the red phosphor, we achieved a high-quality warm white light-emitting diode with color-rendering index of R a = 94, R9 = 95, luminous efficacy of 150 lm W -1 , and correlated color temperature at 3652 K. Furthermore, the good-poor solvent strategy can be used to fast synthesize other fluorides.

General method to evaluate substrate surface modification techniques for light extraction enhancement of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Krummacher, B. C.; Mathai, M. K.; Choong, V.; Choulis, S. A.; So, F.; Winnacker, A.

2006-09-01

The external light output of organic light emitting diodes (OLEDs) can be increased by modifying the light emitting surface. The apparent light extraction enhancement is given by the ratio between the efficiency of the unmodified device and the efficiency of the modified device. This apparent light extraction enhancement is dependent on the OLED architecture itself and is not the correct value to judge the effectiveness of a technique to enhance light outcoupling due to substrate surface modification. We propose a general method to evaluate substrate surface modification techniques for light extraction enhancement of OLEDs independent from the device architecture. This method is experimentally demonstrated using green electrophosphorescent OLEDs with different device architectures. The substrate surface of these OLEDs was modified by applying a prismatic film to increase light outcoupling from the device stack. It was demonstrated that the conventionally measured apparent light extraction enhancement by means of the prismatic film does not reflect the actual performance of the light outcoupling technique. Rather, by comparing the light extracted out of the prismatic film to that generated in the OLED layers and coupled into the substrate (before the substrate/air interface), a more accurate evaluation of light outcoupling enhancement can be achieved. Furthermore we show that substrate surface modification can change the output spectrum of a broad band emitting OLED.

White organic light-emitting diodes with ultra-thin mixed emitting layer

NASA Astrophysics Data System (ADS)

Jeon, T.; Forget, S.; Chenais, S.; Geffroy, B.; Tondelier, D.; Bonnassieux, Y.; Ishow, E.

2012-02-01

White light can be obtained from Organic Light Emitting Diodes by mixing three primary colors, (i.e. red, green and blue) or two complementary colors in the emissive layer. In order to improve the efficiency and stability of the devices, a host-guest system is generally used as an emitting layer. However, the color balance to obtain white light is difficult to control and optimize because the spectrum is very sensitive to doping concentration (especially when a small amount of material is used). We use here an ultra-thin mixed emitting layer (UML) deposited by thermal evaporation to fabricate white organic light emitting diodes (WOLEDs) without co-evaporation. The UML was inserted in the hole-transporting layer consisting of 4, 4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (α-NPB) instead of using a conventional doping process. The UML was formed from a single evaporation boat containing a mixture of two dipolar starbust triarylamine molecules (fvin and fcho) presenting very similar structures and thermal properties and emitting in complementary spectral regions (orange and blue respectively) and mixed according to their weight ratio. The composition of the UML specifically allows for fine tuning of the emission color despite its very thin thickness down to 1 nm. Competitive energy transfer processes from fcho and the host interface toward fvin are key parameters to control the relative intensity between red and blue emission. White light with very good CIE 1931 color coordinate (0.34, 0.34) was obtained by simply adjusting the UML film composition.

Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

PubMed Central

Yao, Yung-Chi; Hwang, Jung-Min; Yang, Zu-Po; Haung, Jing-Yu; Lin, Chia-Ching; Shen, Wei-Chen; Chou, Chun-Yang; Wang, Mei-Tan; Huang, Chun-Ying; Chen, Ching-Yu; Tsai, Meng-Tsan; Lin, Tzu-Neng; Shen, Ji-Lin; Lee, Ya-Ju

2016-01-01

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP. PMID:26935648

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

PubMed

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Warm-White-Light-Emitting Diode Based on a Dye-Loaded Metal-Organic Framework for Fast White-Light Communication.

PubMed

Wang, Zhiye; Wang, Zi; Lin, Bangjiang; Hu, XueFu; Wei, YunFeng; Zhang, Cankun; An, Bing; Wang, Cheng; Lin, Wenbin

2017-10-11

A dye@metal-organic framework (MOF) hybrid was used as a fluorophore in a white-light-emitting diode (WLED) for fast visible-light communication (VLC). The white light was generated from a combination of blue emission of the 9,10-dibenzoate anthracene (DBA) linkers and yellow emission of the encapsulated Rhodamine B molecules. The MOF structure not only prevents dye molecules from aggregation-induced quenching but also efficiently transfers energy to the dye for dual emission. This light-emitting material shows emission lifetimes of 1.8 and 5.3 ns for the blue and yellow components, respectively, which are significantly shorter than the 200 ns lifetime of Y 3 Al 5 O 12 :Ce 3+ in commercial WLEDs. The MOF-WLED device exhibited a modulating frequency of 3.6 MHz for VLC, six times that of commercial WLEDs.

Investigation of organic light emitting diodes for interferometric purposes

NASA Astrophysics Data System (ADS)

Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

2011-05-01

Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

White polymer light-emitting diodes based on star-shaped polymers with an orange dendritic phosphorescent core.

PubMed

Zhu, Minrong; Li, Yanhu; Cao, Xiaosong; Jiang, Bei; Wu, Hongbin; Qin, Jingui; Cao, Yong; Yang, Chuluo

2014-12-01

A series of new star-shaped polymers with a triphenylamine-based iridium(III) dendritic complex as the orange-emitting core and poly(9,9-dihexylfluorene) (PFH) chains as the blue-emitting arms is developed towards white polymer light-emitting diodes (WPLEDs). By fine-tuning the content of the orange phosphor, partial energy transfer and charge trapping from the blue backbone to the orange core is realized to achieve white light emission. Single-layer WPLEDs with the configuration of ITO (indium-tin oxide)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/polymer/CsF/Al exhibit a maximum current efficiency of 1.69 cd A(-1) and CIE coordinates of (0.35, 0.33), which is very close to the pure white-light point of (0.33, 0.33). To the best of our knowledge, this is the first report on star-shaped white-emitting single polymers that simultaneously consist of fluorescent and phosphorescent species. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of Nanosized Single Crystals for Efficient Perovskite Light-Emitting Diodes.

PubMed

Lee, Seungjin; Park, Jong Hyun; Nam, Yun Seok; Lee, Bo Ram; Zhao, Baodan; Di Nuzzo, Daniele; Jung, Eui Dae; Jeon, Hansol; Kim, Ju-Young; Jeong, Hu Young; Friend, Richard H; Song, Myoung Hoon

2018-04-24

Organic-inorganic hybrid perovskites are emerging as promising emitting materials due to their narrow full-width at half-maximum emissions, color tunability, and high photoluminescence quantum yields (PLQYs). However, the thermal generation of free charges at room temperature results in a low radiative recombination rate and an excitation-intensity-dependent PLQY, which is associated with the trap density. Here, we report perovskite films composed of uniform nanosized single crystals (average diameter = 31.7 nm) produced by introducing bulky amine ligands and performing the growth at a lower temperature. By effectively controlling the crystal growth, we maximized the radiative bimolecular recombination yield by reducing the trap density and spatially confining the charges. Finally, highly bright and efficient green emissive perovskite light-emitting diodes that do not suffer from electroluminescence blinking were achieved with a luminance of up to 55 400 cd m -2 , current efficiency of 55.2 cd A -1 , and external quantum efficiency of 12.1%.

Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination

NASA Astrophysics Data System (ADS)

Li, Xiyan; Zhao, Yong-Biao; Fan, Fengjia; Levina, Larissa; Liu, Min; Quintero-Bermudez, Rafael; Gong, Xiwen; Quan, Li Na; Fan, James; Yang, Zhenyu; Hoogland, Sjoerd; Voznyy, Oleksandr; Lu, Zheng-Hong; Sargent, Edward H.

2018-03-01

The external quantum efficiencies of state-of-the-art colloidal quantum dot light-emitting diodes (QLEDs) are now approaching the limit set by the out-coupling efficiency. However, the brightness of these devices is constrained by the use of poorly conducting emitting layers, a consequence of the present-day reliance on long-chain organic capping ligands. Here, we report how conductive and passivating halides can be implemented in Zn chalcogenide-shelled colloidal quantum dots to enable high-brightness green QLEDs. We use a surface management reagent, thionyl chloride (SOCl2), to chlorinate the carboxylic group of oleic acid and graft the surfaces of the colloidal quantum dots with passivating chloride anions. This results in devices with an improved mobility that retain high external quantum efficiencies in the high-injection-current region and also feature a reduced turn-on voltage of 2.5 V. The treated QLEDs operate with a brightness of 460,000 cd m-2, significantly exceeding that of all previously reported solution-processed LEDs.

77 FR 75446 - Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-784] Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant the Joint Motion To Terminate the... sale within the United States after importation of certain light-emitting diodes and products...

Spin-polarized light-emitting diodes based on organic bipolar spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Guan-Bo; Schubert, E. Fred; Cho, Jaehee

2015-08-19

The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 1026 cm–3 s–1 (J = 10 A/cm2), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 1027 cm–3 s–1 (J = 149 A/cm2). Considering Shockley–Read–Hall, radiative, and Auger recombination and includingmore » carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.« less

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Euihan; Hwang, Gwangseok; Chung, Jaehun

2015-01-26

Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggestsmore » that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.« less

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

PubMed

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

High ambient contrast ratio OLED and QLED without a circular polarizer

NASA Astrophysics Data System (ADS)

Tan, Guanjun; Zhu, Ruidong; Tsai, Yi-Shou; Lee, Kuo-Chang; Luo, Zhenyue; Lee, Yuh-Zheng; Wu, Shin-Tson

2016-08-01

A high ambient contrast ratio display device using a transparent organic light emitting diode (OLED) or transparent quantum-dot light-emitting diode (QLED) with embedded multilayered structure and absorber is proposed and its performance is simulated. With the help of multilayered structure, the device structure allows almost all ambient light to get through the display device and be absorbed by the absorber. Because the reflected ambient light is greatly reduced, the ambient contrast ratio of the display system is improved significantly. Meanwhile, the multilayered structure helps to lower the effective refractive index, which in turn improves the out-coupling efficiency of the display system. Potential applications for sunlight readable flexible and rollable displays are emphasized.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Highly efficient all-nitride phosphor-converted white light emitting diode

NASA Astrophysics Data System (ADS)

Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R.; Höppe, Henning A.; Stadler, Florian; Schnick, Wolfgang; Juestel, Thomas; Schmidt, Peter

2005-07-01

The development and demonstration of a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu2+. For color conversion of the primary blue the nitridosilicates M2Si5N8 (orange-red) and MSi2O2N2 (yellow-green), with M = alkaline earth, were employed, thus achieving a high luminous efficiency (25 lumen/W at 1 W input), excellent color quality (correlated color temperature CCT = 3200 K, general color rendering index Ra > 90) and the highest proven color stability of any pc-LED obtained so far. Thus, these novel all-nitride LEDs are superior to both incandescent and fluorescent lamps and may therefore become the next generation of general lighting sources.

Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2016-06-01

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

Combatant Eye Protection: An Introduction to the Blue Light Hazard

DTIC Science & Technology

2015-12-01

visible solar radiation (i.e., blue light ), as well as from light - emitting diode (LED)-generated radiant energy remains a questionable factor under...Garcia, M., Picaud, S., Attia D. 2011. Light - emitting diodes (LED) for domestic lighting : Any risks for the eye?. Progress in retinal and eye research...C., Sliney, D. H., Rollag, M., D., Hanifin, J. P., and Brainard, G. C. 2011. Blue light from light - emitting diodes elicits a dose-dependent

Study of different roles phosphorescent material played in different positions of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Keke, Gu; Jian, Zhong; Jiule, Chen; Yucheng, Chen; Ming, Deng

2013-09-01

Phosphorescent materials are crucial to improve the luminescence and efficiency of organic light emitting diodes (OLED), because its internal quantum efficiency can reach 100%. So the studying of optical and electrical properties of phosphorescent materials is propitious for the further development of phosphorescent OLED. Phosphorescent materials were generally doped into different host materials as emitting components, not only played an important role in emitting light but also had a profound influence on carrier transport properties. We studied the optical and electrical properties of the blue 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi)-based devices, adding a common yellow phosphorescent material bis[2-(4- tert-butylphenyl)benzothiazolato- N,C2'] iridium(acetylacetonate) [( t-bt)2Ir(acac)] in different positions. The results showed ( t-bt)2Ir(acac) has remarkable hole-trapping ability. Especially the ultrathin structure device, compared to the device without ( t-bt)2Ir(acac), had increased the luminance by about 60%, and the efficiency by about 97%. Then introduced thin 4,4'-bis(carbazol-9-yl)biphenyl (CBP) host layer between DPVBi and ( t-bt)2Ir(acac), and got devices with stable white color.

A Solution Processed Flexible Nanocomposite Electrode with Efficient Light Extraction for Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Li, Lu; Liang, Jiajie; Chou, Shu-Yu; Zhu, Xiaodan; Niu, Xiaofan; Zhibinyu; Pei, Qibing

2014-03-01

Highly efficient organic light emitting diodes (OLEDs) based on multiple layers of vapor evaporated small molecules, indium tin oxide transparent electrode, and glass substrate have been extensively investigated and are being commercialized. The light extraction from the exciton radiative decay is limited to less than 30% due to plasmonic quenching on the metallic cathode and the waveguide in the multi-layer sandwich structure. Here we report a flexible nanocomposite electrode comprising single-walled carbon nanotubes and silver nanowires stacked and embedded in the surface of a polymer substrate. Nanoparticles of barium strontium titanate are dispersed within the substrate to enhance light extraction efficiency. Green polymer OLED (PLEDs) fabricated on the nanocomposite electrode exhibit a maximum current efficiency of 118 cd/A at 10,000 cd/m2 with the calculated external quantum efficiency being 38.9%. The efficiencies of white PLEDs are 46.7 cd/A and 30.5%, respectively. The devices can be bent to 3 mm radius repeatedly without significant loss of electroluminescent performance. The nanocomposite electrode could pave the way to high-efficiency flexible OLEDs with simplified device structure and low fabrication cost.

A solution processed flexible nanocomposite electrode with efficient light extraction for organic light emitting diodes.

PubMed

Li, Lu; Liang, Jiajie; Chou, Shu-Yu; Zhu, Xiaodan; Niu, Xiaofan; ZhibinYu; Pei, Qibing

2014-03-17

Highly efficient organic light emitting diodes (OLEDs) based on multiple layers of vapor evaporated small molecules, indium tin oxide transparent electrode, and glass substrate have been extensively investigated and are being commercialized. The light extraction from the exciton radiative decay is limited to less than 30% due to plasmonic quenching on the metallic cathode and the waveguide in the multi-layer sandwich structure. Here we report a flexible nanocomposite electrode comprising single-walled carbon nanotubes and silver nanowires stacked and embedded in the surface of a polymer substrate. Nanoparticles of barium strontium titanate are dispersed within the substrate to enhance light extraction efficiency. Green polymer OLED (PLEDs) fabricated on the nanocomposite electrode exhibit a maximum current efficiency of 118 cd/A at 10,000 cd/m(2) with the calculated external quantum efficiency being 38.9%. The efficiencies of white PLEDs are 46.7 cd/A and 30.5%, respectively. The devices can be bent to 3 mm radius repeatedly without significant loss of electroluminescent performance. The nanocomposite electrode could pave the way to high-efficiency flexible OLEDs with simplified device structure and low fabrication cost.

A Solution Processed Flexible Nanocomposite Electrode with Efficient Light Extraction for Organic Light Emitting Diodes

PubMed Central

Li, Lu; Liang, Jiajie; Chou, Shu-Yu; Zhu, Xiaodan; Niu, Xiaofan; ZhibinYu; Pei, Qibing

2014-01-01

Highly efficient organic light emitting diodes (OLEDs) based on multiple layers of vapor evaporated small molecules, indium tin oxide transparent electrode, and glass substrate have been extensively investigated and are being commercialized. The light extraction from the exciton radiative decay is limited to less than 30% due to plasmonic quenching on the metallic cathode and the waveguide in the multi-layer sandwich structure. Here we report a flexible nanocomposite electrode comprising single-walled carbon nanotubes and silver nanowires stacked and embedded in the surface of a polymer substrate. Nanoparticles of barium strontium titanate are dispersed within the substrate to enhance light extraction efficiency. Green polymer OLED (PLEDs) fabricated on the nanocomposite electrode exhibit a maximum current efficiency of 118 cd/A at 10,000 cd/m2 with the calculated external quantum efficiency being 38.9%. The efficiencies of white PLEDs are 46.7 cd/A and 30.5%, respectively. The devices can be bent to 3 mm radius repeatedly without significant loss of electroluminescent performance. The nanocomposite electrode could pave the way to high-efficiency flexible OLEDs with simplified device structure and low fabrication cost. PMID:24632742

Organic Fluorescent Dyes Supported on Activated Boron Nitride: A Promising Blue Light Excited Phosphors for High-Performance White Light-Emitting Diodes

PubMed Central

Li, Jie; Lin, Jing; Huang, Yang; Xu, Xuewen; Liu, Zhenya; Xue, Yanming; Ding, Xiaoxia; Luo, Han; Jin, Peng; Zhang, Jun; Zou, Jin; Tang, Chengchun

2015-01-01

We report an effective and rare-earth free light conversion material synthesized via a facile fabrication route, in which organic fluorescent dyes, i.e. Rhodamine B (RhB) and fluorescein isothiocyanate (FITC) are embedded into activated boron nitride (αBN) to form a composite phosphor. The composite phosphor shows highly efficient Förster resonance energy transfer and greatly improved thermal stability, and can emit at broad visible wavelengths of 500–650 nm under the 466 nm blue-light excitation. By packaging of the composite phosphors and a blue light-emitting diode (LED) chip with transparent epoxy resin, white LED with excellent thermal conductivity, current stability and optical performance can be realized, i.e. a thermal conductivity of 0.36 W/mk, a Commission Internationale de 1'Eclairage color coordinates of (0.32, 0.34), and a luminous efficiency of 21.6 lm·W−1. Our research opens the door toward to the practical long-life organic fluorescent dyes-based white LEDs. PMID:25682730

Organic light emitting diode with light extracting electrode

DOEpatents

Bhandari, Abhinav; Buhay, Harry

2017-04-18

An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

High Intensity Organic Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and can be expanded to study other thermal issues in more sophisticated structures.

Charge transport in highly efficient iridium cored electrophosphorescent dendrimers

NASA Astrophysics Data System (ADS)

Markham, Jonathan P. J.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.; Weiter, Martin; Bässler, Heinz

2004-01-01

Electrophosphorescent dendrimers are promising materials for highly efficient light-emitting diodes. They consist of a phosphorescent core onto which dendritic groups are attached. Here, we present an investigation into the optical and electronic properties of highly efficient phosphorescent dendrimers. The effect of dendrimer structure on charge transport and optical properties is studied using temperature-dependent charge-generation-layer time-of-flight measurements and current voltage (I-V) analysis. A model is used to explain trends seen in the I-V characteristics. We demonstrate that fine tuning the mobility by chemical structure is possible in these dendrimers and show that this can lead to highly efficient bilayer dendrimer light-emitting diodes with neat emissive layers. Power efficiencies of 20 lm/W were measured for devices containing a second-generation (G2) Ir(ppy)3 dendrimer with a 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene electron transport layer.

Ultrathin nondoped emissive layers for efficient and simple monochrome and white organic light-emitting diodes.

PubMed

Zhao, Yongbiao; Chen, Jiangshan; Ma, Dongge

2013-02-01

In this paper, highly efficient and simple monochrome blue, green, orange, and red organic light emitting diodes (OLEDs) based on ultrathin nondoped emissive layers (EMLs) have been reported. The ultrathin nondoped EML was constructed by introducing a 0.1 nm thin layer of pure phosphorescent dyes between a hole transporting layer and an electron transporting layer. The maximum external quantum efficiencies (EQEs) reached 17.1%, 20.9%, 17.3%, and 19.2% for blue, green, orange, and red monochrome OLEDs, respectively, indicating the universality of the ultrathin nondoped EML for most phosphorescent dyes. On the basis of this, simple white OLED structures are also demonstrated. The demonstrated complementary blue/orange, three primary blue/green/red, and four color blue/green/orange/red white OLEDs show high efficiency and good white emission, indicating the advantage of ultrathin nondoped EMLs on constructing simple and efficient white OLEDs.

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

PubMed

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

PubMed

Wu, Jun-Yi; Chen, Show-An

2018-02-07

We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

Photobiomodulation partially rescues visual cortical neurons from cyanide-induced apoptosis.

PubMed

Liang, H L; Whelan, H T; Eells, J T; Meng, H; Buchmann, E; Lerch-Gaggl, A; Wong-Riley, M

2006-05-12

Near-infrared light via light-emitting diode treatment has documented therapeutic effects on neurons functionally inactivated by tetrodotoxin or methanol intoxication. Light-emitting diode pretreatment also reduced potassium cyanide-induced cell death, but the mode of death via the apoptotic or necrotic pathway was unclear. The current study tested our hypothesis that light-emitting diode rescues neurons from apoptotic cell death. Primary neuronal cultures from postnatal rat visual cortex were pretreated with light-emitting diode for 10 min at a total energy density of 30 J/cm2 before exposing to potassium cyanide for 28 h. With 100 or 300 microM potassium cyanide, neurons died mainly via the apoptotic pathway, as confirmed by electron microscopy, Hoechst 33258, single-stranded DNA, Bax, and active caspase-3. In the presence of caspase inhibitor I, the percentage of apoptotic cells in 300microM potassium cyanide was significantly decreased. Light-emitting diode pretreatment reduced apoptosis from 36% to 17.9% (100 microM potassium cyanide) and from 58.9% to 39.6% (300 microM potassium cyanide), representing a 50.3% and 32.8% reduction, respectively. Light-emitting diode pretreatment significantly decreased the expression of caspase-3 elicited by potassium cyanide. It also reversed the potassium cyanide-induced increased expression of Bax and decreased expression of Bcl-2 to control levels. Moreover, light-emitting diode decreased the intensity of 5-(and -6) chloromethy-2', 7-dichlorodihydrofluorescein diacetate acetyl ester, a marker of reactive oxygen species, in neurons exposed to 300 microM potassium cyanide. These results indicate that light-emitting diode pretreatment partially protects neurons against cyanide-induced caspase-mediated apoptosis, most likely by decreasing reactive oxygen species production, down-regulating pro-apoptotic proteins and activating anti-apoptotic proteins, as well as increasing energy metabolism in neurons as reported previously.

Full down-conversion of amber-emitting phosphor-converted light-emitting diodes with powder phosphors and a long-wave pass filter.

PubMed

Oh, Jeong Rok; Cho, Sang-Hwan; Park, Hoo Keun; Oh, Ji Hye; Lee, Yong-Hee; Do, Young Rag

2010-05-24

This paper reports the possibility of a facile optical structure to realize a highly efficient monochromatic amber-emitting light-emitting diode (LED) using a powder-based phosphor-converted LED combined with a long-wave pass filter (LWPF). The capping of a blue-reflecting and amber-passing LWPF enhances both the amber emission from the silicate amber phosphor layer and the color purity due to the blocking and recycling of the pumping blue light from the InGaN LED. The enhancement of the luminous efficacy of the amber pc-LED with a LWPF (phosphor concentration 20 wt%, 39.4 lm/W) is 34% over that of an amber pc-LED without a LWPF (phosphor concentration 55 wt%, 29.4 lm/W) at 100 mA and a high color purity (>96%) with Commission International d'Eclairage (CIE) color coordinates of x=0.57 and y=0.42.

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

PubMed

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

LEDs for Efficient Energy

ERIC Educational Resources Information Center

Guerin, David A.

1978-01-01

Light-emitting diodes (LEDs) are described and three classroom experiments are given, one to prove the, low power requirements and efficiency of LEDs, an LED on-off detector circuit, and the third an LED photoelectric smoke detector. (BB)

Long-Lived Flexible Displays Employing Efficient and Stable Inverted Organic Light-Emitting Diodes.

PubMed

Fukagawa, Hirohiko; Sasaki, Tsubasa; Tsuzuki, Toshimitsu; Nakajima, Yoshiki; Takei, Tatsuya; Motomura, Genichi; Hasegawa, Munehiro; Morii, Katsuyuki; Shimizu, Takahisa

2018-05-29

Although organic light-emitting diodes (OLEDs) are promising for use in applications such as in flexible displays, reports of long-lived flexible OLED-based devices are limited due to the poor environmental stability of OLEDs. Flexible substrates such as plastic allow ambient oxygen and moisture to permeate into devices, which degrades the alkali metals used for the electron-injection layer in conventional OLEDs (cOLEDs). Here, the fabrication of a long-lived flexible display is reported using efficient and stable inverted OLEDs (iOLEDs), in which electrons can be effectively injected without the use of alkali metals. The flexible display employing iOLEDs can emit light for over 1 year with simplified encapsulation, whereas a flexible display employing cOLEDs exhibits almost no luminescence after only 21 d with the same encapsulation. These results demonstrate the great potential of iOLEDs to replace cOLEDs employing alkali metals for use in a wide variety of flexible organic optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene

NASA Astrophysics Data System (ADS)

H, Sattarian; S, Shojaei; E, Darabi

2016-05-01

In the present study, graphene photonic crystals are employed to enhance the light extraction efficiency (LEE) of two-color, red and blue, light-emitting diode (LED). The transmission characteristics of one-dimensional (1D) Fibonacci graphene photonic crystal LED (FGPC-LED) are investigated by using the transfer matrix method and the scaling study is presented. We analyzed the influence of period, thickness, and permittivity in the structure to enhance the LEE. The transmission spectrum of 1D FGPC has been optimized in detail. In addition, the effects of the angle of incidence and the state of polarization are investigated. As the main result, we found the optimum values of relevant parameters to enhance the extraction of red and blue light from an LED as well as provide perfect omnidirectional and high peak transmission filters for the TE and TM modes.

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

PubMed Central

2014-01-01

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs. PMID:24712527

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes

PubMed Central

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-01-01

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening. PMID:27250743

Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control

NASA Astrophysics Data System (ADS)

Tsai, Sheng-Chieh; Li, Ming-Jui; Fang, Hsin-Chiao; Tu, Chia-Hao; Liu, Chuan-Pu

2018-05-01

A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 108 #/cm2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes.

PubMed

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-06-02

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening.

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

PubMed

Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

2016-03-09

In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

Photobiology eye safety for horticultural LED lighting: Transmittance performance of eyewear protection using high-irradiant monochromatic LEDs.

PubMed

Wu, Bo-Sen; Lefsrud, Mark G

2018-02-01

Light emitting diodes have slowly gained market share as horticultural lighting systems in greenhouses due to their rapid improvement in color performances and light outputs. These advancements have increased the availability of the full spectrum of visible wavelengths and the corresponding irradiance outputs available to plants. However, light emitting diodes owners have limited information on the proper options for personal eyewear protection as the irradiance levels have increased. The objective of this study was to measure the light transmittance performance of 12 eyewear protection including welding goggles, safety goggles, polarized glasses, and sunglasses across the human visible spectrum (380-740 nm) up to an irradiance level of 1500 W·m -2 from high-irradiant light emitting diodes assemblies. Based on the spectral measurements, certain transmitted spectra exhibited spectrum shifts or an alteration in the bimodal distribution which were different than the light emitting diodes spectra, due to the uneven transmittance efficiencies of the glasses. As for the measured transmittance percentages in two experiments, each type of eyewear protection showed distinct transmittance performances, and the performance of the tested eyewear protection was not impacted by irradiance but was dependent on the wavelength. The mean light transmittance was 1.77% for the welding glasses, 13.12% for the polarized glasses, 15.27% for the safety goggles, and 27.65% for the sunglasses. According to these measured results and the spectral weighting exposure limits from the International Electrotechnical Commission 62471 and EU directive 2006/25, consumers and workers using horticultural lighting can select welding goggles or polarized glasses, to limit the possible ocular impact of the high irradiance of monochromatic light in electrical lighting environment. Sunglasses and safety goggles would not be advised as protection, especially if infrared radiation was used.

Organic Light-Emitting Diodes with a Perylene Interlayer Between the Electrode-Organic Interface

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-01-01

The performance of an organic light-emitting diode (OLED) with a vacuum-deposited perylene layer over a fluorine-doped tin oxide (FTO) surface is reported. To investigate the effect of the perylene layer on OLED performance, different thicknesses of perylene are deposited on the FTO surface and their current density-voltages (J-V), luminance-voltages (L-V) and device efficiency characteristics at their respective thickness are studied. Further analysis is carried out with an UV-visible light double-beam spectrophotometer unit, a four-probe resistivity unit and a field emission scanning electron microscope set up to study the optical transmittance, sheet resistance and surface morphology of the bilayer anode film. We used N,N'-bis(3-methyl phenyl)- N,N'(phenyl)-benzidine (TPD) as the hole transport layer, Tris(8-hydroxyquinolinato)aluminum (Alq3) as a light-emitting layer and lithium fluoride as an electron injection layer. The luminance efficiency of an OLED structure with a 9-nm-thick perylene interlayer is increased by 2.08 times that of the single-layer FTO anode OLED. The maximum value of current efficiency is found to be 5.25 cd/A.

Deep blue exciplex organic light-emitting diodes with enhanced efficiency; P-type or E-type triplet conversion to singlet excitons?

PubMed

Jankus, Vygintas; Chiang, Chien-Jung; Dias, Fernando; Monkman, Andrew P

2013-03-13

Simple trilayer, deep blue, fluorescent exciplex organic light-emitting diodes (OLEDs) are reported. These OLEDs emit from an exciplex state formed between the highest occupied molecular orbital (HOMO) of N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and lowest unoccupied molecular orbital (LUMO) of 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi) and the NPB singlet manifold, yielding 2.7% external quantum efficiency at 450 nm. It is shown that the majority of the delayed emission in electroluminescence arises from P-type triplet fusion at NPB sites not E-type reverse intersystem crossing because of the presence of the NPB triplet state acting as a deep trap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extremely efficient flexible organic light-emitting diodes with modified graphene anode

NASA Astrophysics Data System (ADS)

Han, Tae-Hee; Lee, Youngbin; Choi, Mi-Ri; Woo, Seong-Hoon; Bae, Sang-Hoon; Hong, Byung Hee; Ahn, Jong-Hyun; Lee, Tae-Woo

2012-02-01

Although graphene films have a strong potential to replace indium tin oxide anodes in organic light-emitting diodes (OLEDs), to date, the luminous efficiency of OLEDs with graphene anodes has been limited by a lack of efficient methods to improve the low work function and reduce the sheet resistance of graphene films to the levels required for electrodes. Here, we fabricate flexible OLEDs by modifying the graphene anode to have a high work function and low sheet resistance, and thus achieve extremely high luminous efficiencies (37.2 lm W-1 in fluorescent OLEDs, 102.7 lm W-1 in phosphorescent OLEDs), which are significantly higher than those of optimized devices with an indium tin oxide anode (24.1 lm W-1 in fluorescent OLEDs, 85.6 lm W-1 in phosphorescent OLEDs). We also fabricate flexible white OLED lighting devices using the graphene anode. These results demonstrate the great potential of graphene anodes for use in a wide variety of high-performance flexible organic optoelectronics.

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

PubMed

Kwak, Joon Seop; Song, J O; Seong, T Y; Kim, B I; Cho, J; Sone, C; Park, Y

2006-11-01

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

UV emissions from low energy artificial light sources.

PubMed

Fenton, Leona; Moseley, Harry

2014-01-01

Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn

2014-06-28

By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thinmore » non-doped orange emission layer in WOLEDs.« less

Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

PubMed Central

Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

2016-01-01

Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy. PMID:27677240

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Efficient red, green, blue and white organic light-emitting diodes with same exciplex host

NASA Astrophysics Data System (ADS)

Chang, Chih-Hao; Wu, Szu-Wei; Huang, Chih-Wei; Hsieh, Chung-Tsung; Lin, Sung-En; Chen, Nien-Po; Chang, Hsin-Hua

2016-03-01

Recently, exciplex had drawn attention because of its potential for efficient electroluminescence or for use as a host in organic light-emitting diodes (OLEDs). In this study, four kinds of hole transport material/electron transport material combinations were examined to verify the formation of exciplex and the corresponding energy bandgaps. We successfully demonstrated that the combination of tris(4-carbazoyl-9-ylphenyl)amine (TCTA) and 3,5,3‧,5‧-tetra(m-pyrid-3-yl)phenyl[1,1‧]biphenyl (BP4mPy) could form a stable exciplex emission with an adequate energy gap. Using exciplex as a host in red, green, and blue phosphorescent OLEDs with an identical trilayer architecture enabled effective energy transfer from exciplex to emitters, achieving corresponding efficiencies of 8.8, 14.1, and 15.8%. A maximum efficiency of 11.3% and stable emission was obtained in white OLEDs.

Efficient perovskite light-emitting diodes featuring nanometre-sized crystallites

NASA Astrophysics Data System (ADS)

Xiao, Zhengguo; Kerner, Ross A.; Zhao, Lianfeng; Tran, Nhu L.; Lee, Kyung Min; Koh, Tae-Wook; Scholes, Gregory D.; Rand, Barry P.

2017-01-01

Organic-inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.

Effects of electron transport material on blue organ light-emitting diode with fluorescent dopant of BCzVBi.

PubMed

Meng, Mei; Song, Wook; Kim, You-Hyun; Lee, Sang-Youn; Jhun, Chul-Gyu; Zhu, Fu Rong; Ryu, Dae Hyun; Kim, Woo-Young

2013-01-01

High efficiency blue organic light emitting diodes (OLEDs), based on 2-me-thyl-9,10-di(2-naphthyl) anthracene (MADN) doped with 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl (BCzVBi), were fabricated using two different electron transport layers (ETLs) of tris(8-hydroxyquinolino)-aluminum (Alq3) and 4,7-di-phenyl-1,10-phenanthroline (Bphen). Bphen ETL layers favored the efficient hole-electron recombination in the emissive layer of the BCzVBi-doped blue OLEDs, leading to high luminous efficiency and quantum efficiency of 8.34 cd/A at 100 mA/cm2 and 5.73% at 100 cd/m2, respectively. Maximum luminance of blue OLED with Bphen ETL and Alq3 ETL were 10670 cd/m2, and CIExy coordinates of blue OLEDs were (0.180, 0279) and (0.155, 0.212) at 100 cd/m2.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

DOE PAGES

Wierer, Jonathan; Tsao, Jeffrey Y.

2014-09-01

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for bothmore » LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.« less

Electroluminescence of fluorescent-phosphorescent organic light-emitting diodes with regular, inverted, and symmetrical structures

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Shih, Po-Jen; Wu, Wen-Jie

2014-11-01

The influence of the device structure on the electroluminescence (EL) properties of fluorescent-phosphorescent organic light emitting diodes (OLEDs) was demonstrated. Four devices with regular-, inverted-, compensated- and symmetrical-emission layers (EMLs) were prepared. In regular-EML device, DCJTB emission increased when the phosphorescent sensitized EML was thickened. In inverted-EML device, low electron energy barrier at the Bphen/BCzVB interface resulted in weakened blue emission. The compensated-EML device, prepared with a red color-compensated layer, showed a color-tunable broadband white emission. Conversely, device with a quantum-like symmetrical-EML showed a narrow color-temperature range. Stable EL efficiency was obtained from regular, compensated, and symmetrical-EML devices. In contrast, EL efficiency of inverted-EML device rolled off significantly, though it had the highest EL efficiency of 11.4 cd/A.

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Ruijun; Liu Duo; Zuo Zhiyuan

2012-03-15

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10more » min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.« less

Fused Methoxynaphthyl Phenanthrimidazole Semiconductors as Functional Layer in High Efficient OLEDs.

PubMed

Jayabharathi, Jayaraman; Ramanathan, Periyasamy; Karunakaran, Chockalingam; Thanikachalam, Venugopal

2016-01-01

Efficient hole transport materials based on novel fused methoxynaphthyl phenanthrimidazole core structure were synthesised and characterized. Their device performances in phosphorescent organic light emitting diodes were investigated. The high thermal stability in combination with the reversible oxidation process made promising candidates as hole-transporting materials for organic light-emitting devices. Highly efficient Alq3-based organic light emitting devices have been developed using phenanthrimidazoles as functional layers between NPB [4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl] and Alq3 [tris(8-hydroxyquinoline)aluminium] layers. Using the device of ITO/NPB/4/Alq3/LiF/Al, a maximum luminous efficiency of 5.99 cd A(-1) was obtained with a maximum brightness of 40,623 cd m(-2) and a power efficiency of 5.25 lm W(-1).

White organic light-emitting diodes with fluorescent tube efficiency.

PubMed

Reineke, Sebastian; Lindner, Frank; Schwartz, Gregor; Seidler, Nico; Walzer, Karsten; Lüssem, Björn; Leo, Karl

2009-05-14

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

Demonstrating the Light-Emitting Diode.

ERIC Educational Resources Information Center

Johnson, David A.

1995-01-01

Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

Quantum efficiency harmonic analysis of exciton annihilation in organic light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, J. S.; Giebink, N. C., E-mail: ncg2@psu.edu

2015-06-29

Various exciton annihilation processes are known to impact the efficiency roll-off of organic light emitting diodes (OLEDs); however, isolating and quantifying their contribution in the presence of other factors such as changing charge balance continue to be a challenge for routine device characterization. Here, we analyze OLED electroluminescence resulting from a sinusoidal dither superimposed on the device bias and show that nonlinearity between recombination current and light output arising from annihilation mixes the quantum efficiency measured at different dither harmonics in a manner that depends uniquely on the type and magnitude of the annihilation process. We derive a series ofmore » analytical relations involving the DC and first harmonic external quantum efficiency that enable annihilation rates to be quantified through linear regression independent of changing charge balance and evaluate them for prototypical fluorescent and phosphorescent OLEDs based on the emitters 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran and platinum octaethylporphyrin, respectively. We go on to show that, in most cases, it is sufficient to calculate the needed quantum efficiency harmonics directly from derivatives of the DC light versus current curve, thus enabling this analysis to be conducted solely from standard light-current-voltage measurement data.« less

Novel red phosphorescent polymers bearing both ambipolar and functionalized Ir(III) phosphorescent moieties for highly efficient organic light-emitting diodes.

PubMed

Zhao, Jiang; Lian, Meng; Yu, Yue; Yan, Xiaogang; Xu, Xianbin; Yang, Xiaolong; Zhou, Guijiang; Wu, Zhaoxin

2015-01-01

A series of novel red phosphorescent polymers is successfully developed through Suzuki cross-coupling among ambipolar units, functionalized Ir(III) phosphorescent blocks, and fluorene-based silane moieties. The photophysical and electrochemical investigations indicate not only highly efficient energy-transfer from the organic segments to the phosphorescent units in the polymer backbone but also the ambipolar character of the copolymers. Benefiting from all these merits, the phosphorescent polymers can furnish organic light-emitting diodes (OLEDs) with exceptional high electroluminescent (EL) efficiencies with a current efficiency (η L ) of 8.31 cd A(-1) , external quantum efficiency (η ext ) of 16.07%, and power efficiency (η P ) of 2.95 lm W(-1) , representing the state-of-the-art electroluminescent performances ever achieved by red phosphorescent polymers. This work here might represent a new pathway to design and synthesize highly efficient phosphorescent polymers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lock-in thermography approach for imaging the efficiency of light emitters and optical coolers

NASA Astrophysics Data System (ADS)

Radevici, Ivan; Tiira, Jonna; Oksanen, Jani

2017-02-01

Developing optical cooling technologies requires access to reliable efficiency measurement techniques and ability to detect spatial variations in the efficiency and light emission of the devices. We investigate the possibility to combine the calorimetric efficiency measurement principles with lock-in thermography (LIT) and conventional luminescence microscopy to enable spatially resolved measurement of the efficiency, current spreading and local device heating of double diode structures (DDS) serving as test vessels for developing thermophotonic cooling devices. Our approach enables spatially resolved characterization and localization of the losses of the double diode structures as well as other light emitting semiconductor devices. In particular, the approach may allow directly observing effects like current crowding and surface recombination on the light emission and heating of the DDS devices.

The efficiency of light-emitting diode suction traps for the collection of South African livestock-associated Culicoides species.

PubMed

Venter, G J; Boikanyo, S N B; De Beer, C J

2018-06-28

Culicoides biting midges (Diptera: Ceratopogonidae) are vectors of a range of orbiviruses that cause important veterinary diseases such as bluetongue and African horse sickness. The effective monitoring of Culicoides species diversity and abundance, both at livestock and near potential wildlife hosts, is essential for risk management. The Onderstepoort 220-V ultraviolet (UV) light trap is extensively used for this purpose. Reducing its power requirements by fitting low-energy light-emitting diodes (LEDs) can lead to greater flexibility in monitoring. A comparison of the efficiency of the 220-V Onderstepoort trap (8-W fluorescent UV light) with the efficiency of the 220-V or 12-V Onderstepoort traps fitted with red, white, blue or green LEDs or a 12-V fluorescent Onderstepoort trap demonstrated the 220-V Onderstepoort trap to be the most efficient. All the results showed nulliparous Culicoides imicola Kieffer females to be the dominant grouping. Despite the lower numbers collected, 12-V traps can be used in field situations to determine the most abundant species. © 2018 The Royal Entomological Society.

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

PubMed

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

Sodium bromide additive improved film morphology and performance in perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Jinghai; Cai, Feilong; Yang, Liyan; Ye, Fanghao; Zhang, Jinghui; Gurney, Robert S.; Liu, Dan; Wang, Tao

2017-07-01

Organometal halide perovskite is a promising material to fabricate light-emitting diodes (LEDs) via solution processing due to its exceptional optoelectronic properties. However, incomplete precursor conversion and various defect states in the perovskite light-emitting layer lead to low luminance and external quantum efficiency of perovskite LEDs. We show here the addition of an optimum amount of sodium bromide in the methylammonium lead bromide (MAPbBr3) precursor during a one-step perovskite solution casting process can effectively improve the film coverage, enhance the crystallinity, and passivate ionic defects on the surface of MAPbBr3 crystal grains, resulting in LEDs with a reduced turn-on voltage from 2.8 to 2.3 V and an enhanced maximum luminance from 1059 to 6942 Cd/m2 when comparing with the pristine perovskite-based device.

Long-lived efficient delayed fluorescence organic light-emitting diodes using n-type hosts.

PubMed

Cui, Lin-Song; Ruan, Shi-Bin; Bencheikh, Fatima; Nagata, Ryo; Zhang, Lei; Inada, Ko; Nakanotani, Hajime; Liao, Liang-Sheng; Adachi, Chihaya

2017-12-21

Organic light-emitting diodes have become a mainstream display technology because of their desirable features. Third-generation electroluminescent devices that emit light through a mechanism called thermally activated delayed fluorescence are currently garnering much attention. However, unsatisfactory device stability is still an unresolved issue in this field. Here we demonstrate that electron-transporting n-type hosts, which typically include an acceptor moiety in their chemical structure, have the intrinsic ability to balance the charge fluxes and broaden the recombination zone in delayed fluorescence organic electroluminescent devices, while at the same time preventing the formation of high-energy excitons. The n-type hosts lengthen the lifetimes of green and blue delayed fluorescence devices by > 30 and 1000 times, respectively. Our results indicate that n-type hosts are suitable to realize stable delayed fluorescence organic electroluminescent devices.

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

PubMed

Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

2012-01-01

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.

PubMed

Lai, Fang-I; Yang, Jui-Fu

2013-05-17

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

LIGHTING FOR READING: DESIGNING AN LED LUMINAIRE FOR HOMES AND OFFICES

EPA Science Inventory

Energy waste from traditional incandescent light bulbs was reduced by fluorescent lamps, but they pose a threat to the environment due to the mercury in each tube and disposal issues. Light emitting diodes (LEDs) provide superior energy efficiency, longer life, toxin-free comp...

Facile solution-processed aqueous MoOx for feasible application in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zheng, Qinghong; Qu, Disui; Zhang, Yan; Li, Wanshu; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Liu, Liming; Wang, Honghang; Zhang, Xiaowen

2018-05-01

Solution-processed techniques attract increasing attentions in organic electronics for their low-cost and scalable manufacturing. We demonstrate the favorite hole injection material of solution-processed aqueous MoOx (s-MoOx) with facile fabrication process and cast successful application to constructing efficient organic light-emitting diodes (OLEDs). Atomic force microscopy and X-ray photoelectron spectroscopy analysis show that s-MoOx behaves superior film morphology and non-stoichiometry with slight oxygen deficiency. With tris(8-hydroxy-quinolinato)aluminium as emitting layer, s-MoOx based OLED shows maximum luminous efficiency of 7.9 cd/A and power efficiency of 5.9 lm/W, which have been enhanced by 43.6% and 73.5%, respectively, in comparison with the counterpart using conventional vacuum thermal evaporation MoOx. Current-voltage, impedance-voltage, phase-voltage and capacitance-voltage characteristics of hole-only devices indicate that s-MoOx with two processes of "spin-coating/annealing" shows mostly enhanced hole injection capacity and thus promoting device performance. Our experiments provide an alternative approach for constructing efficient OLED with solution process.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Efficient Color-Stable Inverted White Organic Light-Emitting Diodes with Outcoupling-Enhanced ZnO Layer.

PubMed

Zhao, Xin-Dong; Li, Yan-Qing; Xiang, Heng-Yang; Zhang, Yi-Bo; Chen, Jing-De; Xu, Lu-Hai; Tang, Jian-Xin

2017-01-25

Inverted organic light-emitting diode (OLED) has attracted extensive attention due to the demand in active-matrix OLED display panels as its geometry enables the direct connection with n-channel transistor backplane on the substrate. One key challenge of high-performance inverted OLED is an efficient electron-injection layer with superior electrical and optical properties to match the indium tin oxide cathode on substrate. We here propose a synergistic electron-injection architecture using surface modification of ZnO layer to simultaneously promote electron injection into organic emitter and enhance out-coupling of waveguided light. An efficient inverted white OLED is realized by introducing the nanoimprinted aperiodic nanostructure of ZnO for broadband and angle-independent light out-coupling and inserting an n-type doped interlayer for energy level tuning and injection barrier lowering. As a result, the optimized inverted white OLEDs have an external quantum efficiency of 42.4% and a power efficiency of 85.4 lm W 1- , which are accompanied by the superiority of angular color stability over the visible wavelength range. Our results may inspire a promising approach to fabricate high-efficiency inverted OLEDs for large-scale display panels.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

New yellow Ba 0.93Eu 0.07Al 2O 4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Budai, John D.; Liu, Feng

2013-01-01

Phosphor-converted white light-emitting diodes for indoor illumination need to be warm-white (i.e., correlated color temperature <4000 K) with good color rendition (i.e., color rendering index >80). However, no single-phosphor, single-emitting-center-converted white light-emitting diodes can simultaneously satisfy the color temperature and rendition requirements due to the lack of sufficient red spectral component in the phosphors’ emission spectrum. Here, we report a new yellow Ba 0.93Eu 0.07Al 2O 4 phosphor that has a new orthorhombic lattice structure and exhibits a broad yellow photoluminescence band with sufficient red spectral component. Warm-white emissions with correlated color temperature <4000 K and color rendering index >80more » were readily achieved when combining the Ba 0.93Eu 0.07Al 2O 4 phosphor with a blue light-emitting diode (440–470 nm). This study demonstrates that warm-white light-emitting diodes with high color rendition (i.e., color rendering index >80) can be achieved based on single-phosphor, single-emitting-center conversion.« less

Diboron compound-based organic light-emitting diodes with high efficiency and reduced efficiency roll-off

NASA Astrophysics Data System (ADS)

Wu, Tien-Lin; Huang, Min-Jie; Lin, Chih-Chun; Huang, Pei-Yun; Chou, Tsu-Yu; Chen-Cheng, Ren-Wu; Lin, Hao-Wu; Liu, Rai-Shung; Cheng, Chien-Hong

2018-04-01

Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) materials are promising for the realization of highly efficient light emitters. However, such devices have so far suffered from efficiency roll-off at high luminance. Here, we report the design and synthesis of two diboron-based molecules, CzDBA and tBuCzDBA, which show excellent TADF properties and yield efficient OLEDs with very low efficiency roll-off. These donor-acceptor-donor (D-A-D) type and rod-like compounds concurrently generate TADF with a photoluminescence quantum yield of 100% and an 84% horizontal dipole ratio in the thin film. A green OLED based on CzDBA exhibits a high external quantum efficiency of 37.8 ± 0.6%, a current efficiency of 139.6 ± 2.8 cd A-1 and a power efficiency of 121.6 ± 3.1 lm W-1 with an efficiency roll-off of only 0.3% at 1,000 cd m-2. The device has a peak emission wavelength of 528 nm and colour coordinates of the Commission International de ĺEclairage (CIE) of (0.31, 0.61), making it attractive for colour-display applications.

Evaluation of light-emitting diode beacon light fixtures.

DOT National Transportation Integrated Search

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Guohong; Liu, Yong; Li, Baojun

2015-06-07

We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takesmore » parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.« less

High Efficiency Stacked Organic Light-Emitting Diodes Employing Li2O as a Connecting Layer

NASA Astrophysics Data System (ADS)

Kanno, Hiroshi; Hamada, Yuji; Nishimura, Kazuki; Okumoto, Kenji; Saito, Nobuo; Ishida, Hiroki; Takahashi, Hisakazu; Shibata, Kenichi; Mameno, Kazunobu

2006-12-01

We demonstrate the high-efficiency stacked organic light-emitting diodes (OLEDs) introducing new connecting layers. In the green stacked OLEDs, the external efficiencies increase proportionally to the number of the stacked units without suffering the decrease in power efficiency. The current, power and external efficiencies at 0.5 mA/cm2 of the stacked OLED with six stacked units (6-stacked OLED) have reached 235 cd/A, 46.6 lm/W, and 65.8%, respectively. Furthermore, we have applied the connecting layers to a white stacked OLED and fabricated an active-matrix full-color display with a low temperature polysilicon thin film transistor backplane. In the device, the current efficiency of the white 2-stacked OLED is enhanced by a factor of 2.2. The initial luminance drop is significantly suppressed for the white 2-stacked OLED compared to 1-stacked OLED. The proposed white stacked OLED technology can be applied to a full-color display for a practical use.

High-performance organic light-emitting diodes comprising ultrastable glass layers

PubMed Central

Rodríguez-Viejo, Javier

2018-01-01

Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

NASA Astrophysics Data System (ADS)

Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

2017-03-01

GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

Synthesis and photoluminescence properties of a cyan-emitting phosphor Ca3(PO4)2:Eu2+ for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Wenli; Han, Jin; Zhang, Xuejie; Qiu, Zhongxian; Xie, Qingji; Liang, Hongbin; Lian, Shixun; Wang, Jing

2015-01-01

In this paper, a cyan-emitting phosphor Ca3(PO4)2:Eu2+ (TCP:Eu2+) was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 250-450 nm region, but the emission spectrum is prominent at around 480 nm. The emission intensity of the TCP:Eu2+ was found to be 60% and 82% of that of the commercial BaMgAl10O17:Eu2+ (BAM) under excitation at 340 nm and 370 nm, respectively. Upon excitation at 370 nm, the absolute internal and external quantum efficiencies of the Ca3(PO4)2:1.5%Eu2+ are 60% and 42%, respectively. Moreover, a white LED lamp was fabricated by coating TCP:Eu2+ with a blue-emitting BAM and a red-emitting CaAlSiN3:Eu2+ on a near-ultraviolet (375 nm) LED chip, driven by a 350 mA forward bias current, and it produces an intense white light with a color rendering index of 75.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

NASA Astrophysics Data System (ADS)

Thorseth, Anders

2012-03-01

Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

Effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lei, Po-Hsun; Wang, Shun-Hsi; Juang, Fuh Shyang; Tseng, Yung-Hsin; Chung, Meng-Jung

2010-05-01

In this article, we report on the effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq 3/NPB thin-film organic light emitting diode (OLED), the Alq 3/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m 2 under the injection current density of 1000 A/m 2, and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq 3/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.

Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

PubMed

Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

2007-10-15

A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

High-efficiency emitting materials based on phenylquinoline/carbazole-based compounds for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Jin, Sung-Ho

2009-08-01

Highly efficient light-emitting materials based on phenylquinoline-carbazole derivative has been synthesized for organic-light emitting diodes (OLEDs). The materials form high quality amorphous thin films by thermal evaporation and the energy levels can be easily adjusted by the introduction of different electron donating and electron withdrawing groups on carbazoylphenylquinoline. Non-doped deep-blue OLEDs using Et-CVz-PhQ as the emitter show bright emission (CIE coordinates, x=0.156, y=0.093) with an external quantum efficiency of 2.45 %. Furthermore, the material works as an excellent host material for BCzVBi to get high-performance OLEDs with excellent deep-blue CIE coordinates (x=0.155, y=0.157), high power efficiency (5.98 lm/W), and high external quantum efficiency (5.22 %). Cyclometalated Ir(III) μ-chloride bridged dimers were synthesized by iridium trichloride hydrate with an excess of our developed deep-blue emitter, Et-CVz-PhQ. The Ir(III) complexes were prepared by the dimers with the corresponding ancillary ligands. The chloride bridged diiridium complexes can be easily converted to mononuclear Ir(III) complexes by replacing the two bridging chlorides with bidentate monoanionic ancillary ligands. Among the various types of ancillary ligands, we firstly used picolinic acid N-oxide, including picolinic acid and acetylacetone as an ancillary ligands for Ir(III) complexes. The PhOLEDs also shows reasonably high brightness and good luminance efficiency of 20,000 cd/m2 and 12 cd/A, respectively.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Design of efficient molecular organic light-emitting diodes by a high-throughput virtual screening and experimental approach.

PubMed

Gómez-Bombarelli, Rafael; Aguilera-Iparraguirre, Jorge; Hirzel, Timothy D; Duvenaud, David; Maclaurin, Dougal; Blood-Forsythe, Martin A; Chae, Hyun Sik; Einzinger, Markus; Ha, Dong-Gwang; Wu, Tony; Markopoulos, Georgios; Jeon, Soonok; Kang, Hosuk; Miyazaki, Hiroshi; Numata, Masaki; Kim, Sunghan; Huang, Wenliang; Hong, Seong Ik; Baldo, Marc; Adams, Ryan P; Aspuru-Guzik, Alán

2016-10-01

Virtual screening is becoming a ground-breaking tool for molecular discovery due to the exponential growth of available computer time and constant improvement of simulation and machine learning techniques. We report an integrated organic functional material design process that incorporates theoretical insight, quantum chemistry, cheminformatics, machine learning, industrial expertise, organic synthesis, molecular characterization, device fabrication and optoelectronic testing. After exploring a search space of 1.6 million molecules and screening over 400,000 of them using time-dependent density functional theory, we identified thousands of promising novel organic light-emitting diode molecules across the visible spectrum. Our team collaboratively selected the best candidates from this set. The experimentally determined external quantum efficiencies for these synthesized candidates were as large as 22%.

Design of efficient molecular organic light-emitting diodes by a high-throughput virtual screening and experimental approach

NASA Astrophysics Data System (ADS)

Gómez-Bombarelli, Rafael; Aguilera-Iparraguirre, Jorge; Hirzel, Timothy D.; Duvenaud, David; MacLaurin, Dougal; Blood-Forsythe, Martin A.; Chae, Hyun Sik; Einzinger, Markus; Ha, Dong-Gwang; Wu, Tony; Markopoulos, Georgios; Jeon, Soonok; Kang, Hosuk; Miyazaki, Hiroshi; Numata, Masaki; Kim, Sunghan; Huang, Wenliang; Hong, Seong Ik; Baldo, Marc; Adams, Ryan P.; Aspuru-Guzik, Alán

2016-10-01

Virtual screening is becoming a ground-breaking tool for molecular discovery due to the exponential growth of available computer time and constant improvement of simulation and machine learning techniques. We report an integrated organic functional material design process that incorporates theoretical insight, quantum chemistry, cheminformatics, machine learning, industrial expertise, organic synthesis, molecular characterization, device fabrication and optoelectronic testing. After exploring a search space of 1.6 million molecules and screening over 400,000 of them using time-dependent density functional theory, we identified thousands of promising novel organic light-emitting diode molecules across the visible spectrum. Our team collaboratively selected the best candidates from this set. The experimentally determined external quantum efficiencies for these synthesized candidates were as large as 22%.

Bidentate Ligand-Passivated CsPbI3 Perovskite Nanocrystals for Stable Near-Unity Photoluminescence Quantum Yield and Efficient Red Light-Emitting Diodes.

PubMed

Pan, Jun; Shang, Yuequn; Yin, Jun; De Bastiani, Michele; Peng, Wei; Dursun, Ibrahim; Sinatra, Lutfan; El-Zohry, Ahmed M; Hedhili, Mohamed N; Emwas, Abdul-Hamid; Mohammed, Omar F; Ning, Zhijun; Bakr, Osman M

2018-01-17

Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a postsynthesis passivation process for CsPbI 3 NCs by using a bidentate ligand, namely 2,2'-iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m 2 luminance, surpassing by far LEDs made from the nonpassivated NCs.

Influence of dehydrated nanotubed titanic acid on charge transport and luminescent properties of polymer light-emitting diodes with fluorescent dye

NASA Astrophysics Data System (ADS)

Qian, Lei; Bera, Debasis; Jin, Zhen-Sheng; Du, Zu-Liang; Xu, Zheng; Teng, Feng; Liu, Wei

2007-09-01

In this paper, we discuss the influence of dehydrated nanotubed titanic acid (DNTA) on charge transport and luminescent properties of polymer light-emitting diodes (PLEDs) doped with fluorescent dye. Photoluminescence results confirm the efficient energy transfer from PVK to 4-(dicyanom-ethylene)-2- t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris-(8-hydroxtquinoline) aluminum (Alq 3) in a DNTA-doped device. The device showed lower turn-on voltages and higher charge current by doping with DNTA, which also caused a shift in the exciton's recombination region.

High efficient white organic light-emitting diodes with single emissive layer using phosphorescent red, green, and blue dopants

NASA Astrophysics Data System (ADS)

Kim, You-Hyun; Wai Cheah, Kok; Young Kim, Woo

2013-07-01

Phosphorescent white organic light-emitting diodes (PHWOLEDs) with single emissive layer were fabricated by co-doping phosphorescent blue, green, and red emitters with different concentrations. WOLEDs using Ir(piq)3 and Ir(ppy)3 as red and green dopants along with 8% of Firpic as blue dopant with host materials of 4CzPBP in the emissive layer were compared under various doping ratio between Ir(piq)3 and Ir(ppy)3. Triplet-triplet Dexter energy transfer in single emissive PHWOLEDs including three primary colors was saturated from higher triplet energy levels to lower triplet energy levels directly.

Organometal halide perovskite light-emitting diodes with laminated carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Shan, Xin; Bade, Sri Ganesh R.; Geske, Thomas; Davis, Melissa; Smith, Rachel; Yu, Zhibin

2017-08-01

Organometal halide perovskite light-emitting diodes (LEDs) with laminated carbon nanotube (CNT) electrodes are reported. The LEDs have an indium tin oxide (ITO) bottom electrode, a screen printed methylammonium lead tribromide (MAPbBr3)/polymer composite thin film as the emissive layer, and laminated CNT as the top electrode. The devices can be turned on at 2.2 V, reaching a brightness of 4,960 cd m-2 and a current efficiency of 1.54 cd A-1 at 6.9 V. The greatly simplified fabrication process in this work can potentially lead to the scalable manufacturing of large size and low cost LED panels in the future.

Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.

PubMed

Cho, Chu-Young; Kwon, Min-Ki; Lee, Sang-Jun; Han, Sang-Heon; Kang, Jang-Won; Kang, Se-Eun; Lee, Dong-Yul; Park, Seong-Ju

2010-05-21

We demonstrate the surface plasmon-enhanced blue light-emitting diodes (LEDs) using Ag nanoparticles embedded in p-GaN. A large increase in optical output power of 38% is achieved at an injection current of 20 mA due to an improved internal quantum efficiency of the LEDs. The enhancement of optical output power is dependent on the density of the Ag nanoparticles. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and localized surface plasmons in Ag nanoparticles embedded in p-GaN.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Tandem organic light-emitting diodes with KBH4 doped 9,10-bis(3-(pyridin-3-yl)phenyl) anthracene connected to the charge generation layer.

PubMed

Duan, Lian; Tsuboi, Taiju; Qiu, Yong; Li, Yanrui; Zhang, Guohui

2012-06-18

Tandem organic light emitting diodes (OLEDs) are ideal for lighting applications due to their low working current density at high brightness. In this work, we have studied an efficient electron transporting layer of KBH(4) doped 9,10-bis(3-(pyridin-3-yl)phenyl)anthracene (DPyPA) which is located adjacent to charge generation layer of MoO(3)/NPB. The excellent transporting property of the DPyPA:KBH(4) layer helps the tandem OLED to achieve a lower voltage than the tandem device with the widely used tris-(8-hydroxyquinoline)aluminum:Li. For the tandem white OLED with a fluorescent blue unit and a phosphorescent yellow unit, we've achieved a high current efficiency of 75 cd/A, which can be further improved to 120 cd/A by attaching a diffuser layer.

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

Efficient nanosecond photoluminescence from infrared PbS quantum dots coupled to plasmonic nanoantennas

DOE PAGES

Akselrod, Gleb M.; Weidman, Mark C.; Li, Ying; ...

2016-09-13

Infrared (IR) light sources with high modulation rates are critical components for on-chip optical communications. Lead-based colloidal quantum dots are promising nonepitaxial materials for use in IR light-emitting diodes, but their slow photoluminescence lifetime is a serious limitation. Here we demonstrate coupling of PbS quantum dots to colloidal plasmonic nanoantennas based on film-coupled metal nanocubes, resulting in a dramatic 1300-fold reduction in the emission lifetime from the microsecond to the nanosecond regime. This lifetime reduction is primarily due to a 1100-fold increase in the radiative decay rate owing to the high quantum yield (65%) of the antenna. The short emissionmore » lifetime is accompanied by high antenna quantum efficiency and directionality. Lastly, this nonepitaxial platform points toward GHz frequency, electrically modulated, telecommunication wavelength light-emitting diodes and single-photon sources.« less

Evaluation of light-emitting diode beacon light fixtures : final report.

DOT National Transportation Integrated Search

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

2015-02-01

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

White light emitting diode based on InGaN chip with core/shell quantum dots

NASA Astrophysics Data System (ADS)

Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

2009-08-01

Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

PubMed

Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

2015-12-01

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

Organic light emitting diode with surface modification layer

DOEpatents

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode.

PubMed

Wang, Zhibin; Cheng, Tai; Wang, Fuzhi; Bai, Yiming; Bian, Xingming; Zhang, Bing; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2018-05-31

Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

Phototoxic action of light emitting diode in the in vitro viability of Trichophyton rubrum.

PubMed

Amorim, José Cláudio Faria; Soares, Betania Maria; Alves, Orley Araújo; Ferreira, Marcus Vinícius Lucas; Sousa, Gerdal Roberto; Silveira, Lívio de Barros; Piancastelli, André Costa Cruz; Pinotti, Marcos

2012-01-01

Trichophyton rubrum is the most common agent of superficial mycosis of the skin and nails causing long lasting infections and high recurrence rates. Current treatment drawbacks involve topical medications not being able to reach the nail bed at therapeutic concentrations, systemic antifungal drugs failing to eradicate the fungus before the nails are renewed, severe side effects and selection of resistant fungal isolates. Photodynamic therapy (PDT) has been a promising alternative to conventional treatments. This study evaluated the in vitro effectiveness of toluidine blue O (TBO) irradiated by Light emitting diode (LED) in the reduction of T. rubrum viability. The fungal inoculums' was prepared and exposed to different TBO concentrations and energy densities of Light emitting diode for evaluate the T. rubrum sensibility to PDT and production effect fungicidal after photodynamic treatment. In addition, the profiles of the area and volume of the irradiated fungal suspensions were also investigated. A small reduction, in vitro, of fungal cells was observed after exposition to 100 µM toluidine blue O irradiated by 18 J/cm² Light emitting diode. Fungicidal effect occurred after 25 µM toluidine blue O irradiation by Light emitting diode with energy density of 72 J/cm². The analysis showed that the area and volume irradiated by the Light emitting diode were 52.2 mm² and 413.70 mm³, respectively. The results allowed to conclude that Photodynamic therapy using Light emitting diode under these experimental conditions is a possible alternative approach to inhibit in vitro T. rubrum and may be a promising new treatment for dermatophytosis caused by this fungus.

Assessment of the performance of light-emitting diode roadway lighting technology.

DOT National Transportation Integrated Search

2015-10-01

This study, championed by the Virginia Department of Transportation (VDOT) Traffic Engineering : Division, involved a thorough investigation of light-emitting diode (LED) roadway lighting technology by : testing six types of roadway luminaires (inclu...

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

A comparative study of the influence of nickel oxide layer on the FTO surface of organic light emitting diode

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-03-01

The influence of thin layer of nickel oxide (NiO) over the fluorine-doped tin oxide (FTO) surface on the performance of Organic light-emitting diode (OLED) is reported. With an optimal thickness of NiO (10 nm), the luminance efficiency is found to be increased as compared to the single FTO OLED. The performance of OLED is studied by depositing NiO films at different thicknesses on the FTO surface and analyzed their J-V and L-V characteristics. Further analysis is carried out by measuring sheet resistance and optical transmittance. The surface morphology is studied with the help of FE-SEM images. Our results indicate that NiO (10 nm) buffer layer is an excellent choice to increase the efficiency of FTO based OLED devices within the charge tunneling region. The maximum value of current efficiency is found to be 7.32 Cd/A.

Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.

PubMed

Li, Y Z; Wang, Z L; Luo, H; Wang, Y Z; Xu, W J; Ran, G Z; Qin, G G; Zhao, W Q; Liu, H

2010-07-19

A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (approximately 10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V(2)O(5)/ NPB/ CBP: (ppy)(2)Ir(acac)/ Bphen/ Bphen: Cs(2)CO(3)/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V(2)O(5)/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Optical devices featuring nonpolar textured semiconductor layers

DOEpatents

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Emission Characteristics of Organic Light-Emitting Diodes and Organic Thin-Films with Planar and Corrugated Structures

PubMed Central

Wei, Mao-Kuo; Lin, Chii-Wann; Yang, Chih-Chung; Kiang, Yean-Woei; Lee, Jiun-Haw; Lin, Hoang-Yan

2010-01-01

In this paper, we review the emission characteristics from organic light-emitting diodes (OLEDs) and organic molecular thin films with planar and corrugated structures. In a planar thin film structure, light emission from OLEDs was strongly influenced by the interference effect. With suitable design of microcavity structure and layer thicknesses adjustment, optical characteristics can be engineered to achieve high optical intensity, suitable emission wavelength, and broad viewing angles. To increase the extraction efficiency from OLEDs and organic thin-films, corrugated structure with micro- and nano-scale were applied. Microstructures can effectively redirects the waveguiding light in the substrate outside the device. For nanostructures, it is also possible to couple out the organic and plasmonic modes, not only the substrate mode. PMID:20480033

Method and apparatus for improving the performance of light emitting diodes

DOEpatents

Lowery, Christopher H.; McElfresh, David K.; Burchet, Steve; Adolf, Douglas B.; Martin, James

1996-01-01

A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

ZnCuInS/ZnSe/ZnS quantum dot-based downconversion light-emitting diodes and their thermal effect

DOE PAGES

Liu, Wenyan; Zhang, Yu; Wang, Dan; ...

2015-08-13

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half-maximum (FWHM) and power efficiencies (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed littlemore » due to the low emission temperature coefficients of 0.022, 0.050 and 0.068 nm/°C for red-, yellow- and green-emitting ZnCuInS/ZnSe/ZnS QDs. Lastly this indicates that ZnCuInS/ZnSe/ZnS QDs are more suitable for down-conversion LEDs compared to CdSe QDs.« less

Trap-assisted and Langevin-type recombination in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

2011-04-01

Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the diffusion-dominated regime has a temperature-independent value of 2, which reveals that nonradiative trap-assisted recombination dominates the current. In contrast, the ideality factor of the light output approaches unity, demonstrating that luminance is governed by recombination of the bimolecular Langevin type. This apparent contradiction can be resolved by measuring the current and luminance ideality factor for a white-emitting polymer, where both free and trapped charge carriers recombine radiatively. With increasing bias voltage, Langevin recombination becomes dominant over trap-assisted recombination due to its stronger dependence on carrier density, leading to an enhancement in OLED efficiency.

Purifying synthetic high-strength wastewater by microalgae chlorella vulgaris under various light emitting diode wavelengths and intensities

PubMed Central

2013-01-01

The high-strength wastewater is now well known as a threat to the natural water since it is highly possible to arouse water eutrophication or algal blooms. The effects of various light emitting diode wavelengths and intensities on the microalgae biological wastewater treatment system was studied in this research. The various nutrient removals and economic efficiencies represented similar variation trends, and these variations under both high C and N loading treatments were similar too. The order for microalgae C. vulgaris reproduction in terms of dry weight and nutrient removal efficiency both were red > white > yellow > blue, under high carbon and nitrogen loading treatments, indicating that the red light was the optimum light wavelength. Furthermore, considering the optimal light intensity in terms of nutrient removal efficiency was 2500 and 2000 μmol/m2•s, while in terms of economic efficiency was 1000, 1500 and 2000 μmol/m2•s. Therefore, the optimum light intensity was found to be 2000 μmol/m2•s. In addition, the optimal experimental illumination time was determined as 120 h. The Chlorella vulgaris microalgae biological wastewater treatment system utilized in this research was able to purify the high-strength carbon and nitrogen wastewater effectively under optimum light wavelength and intensity. PMID:24499586

Efficient triplet harvesting of hybrid white organic light-emitting diodes using thermally activated delayed fluorescence green emitter

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Baek, Hyun Jung; Yun, Tae Jun; Yun, Geum Jae; Kim, Woo Young; Kim, Young Kwan

2016-10-01

Hybrid white organic light-emitting diodes (WOLEDs) were fabricated by applying triplet harvesting (TH) using a green thermally activated delayed fluorescence (TADF) emitter. The triplet exciton of the green TADF emitter can be upconverted to its singlet state. The TH involved energy transfer of triplet exciton from a blue fluorescent emitter to a green TADF and red phosphorescent emitters, where they can decay radiatively. In addition, the triplet exciton of the green TADF emitter was energy transferred to its singlet state for a reverse intersystem crossing by green emission. Enhanced hybrid WOLEDs were demonstrated using an efficient green TADF emitter combined with red phosphorescent and blue fluorescent emitters. Hybrid WOLEDs were fabricated with various hole-electron recombination zones as changing blue emitting layer thicknesses. Among these, hybrid WOLEDs showed a maximum external quantum efficiency of 11.23%, luminous efficiency of 29.20 cd/A, and a power efficiency of 26.21 lm/W. Moreover, the WOLED exhibited electroluminescence spectra with Commission International de L'Éclairage chromaticity of (0.38, 0.36) at 1000 cd/m2 and a color rendering index of 82 at a practical brightness of 20,000 cd/m2.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

PubMed

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rothberg, Lewis

2012-11-30

Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential tomore » be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.« less

Improvement in luminance of light-emitting diode using InP/ZnS quantum dot with 1-dodecanethiol ligand

NASA Astrophysics Data System (ADS)

Fukuda, Takeshi; Sasaki, Hironao

2018-03-01

We present the synthesis protocol of a red emissive InP/ZnS quantum dot with a 1-dodecanthiol ligand and its application to a quantum dot light-emitting diode. The ligand change from oleylamine to 1-dodecanthiol, which were connected around the InP/ZnS quantum dot, was confirmed by Fourier-transform infrared spectroscopy and thermal analysis. The absorption peak was blue-shifted by changing 1-dodecanthiol ligands from oleylamine ligands to prevent the unexpected nucleation of the InP core. In addition, the luminance of the light-emitting device was improved by using the InP/ZnS quantum dot with 1-dodecanthiol ligands, and the maximum current efficiency of 7.2 × 10-3 cd/A was achieved. The 1-dodecanthiol ligand is often used for capping to reduce the number of surface defects and/or prevent unexpected core growth, resulting in reduced Auger recombination. This result indicates that 1-dodecanthiol ligands prevent the deactivation of excitons while injecting carriers by applying a voltage, resulting in a high luminance efficiency.

Novel Design of Iridium Phosphors with Pyridinylphosphinate Ligands for High-Efficiency Blue Organic Light-emitting Diodes

PubMed Central

Wu, Zheng-Guang; Jing, Yi-Ming; Lu, Guang-Zhao; Zhou, Jie; Zheng, You-Xuan; Zhou, Liang; Wang, Yi; Pan, Yi

2016-01-01

Due to the high quantum efficiency and wide scope of emission colors, iridium (Ir) (III) complexes have been widely applied as guest materials for OLEDs (organic light-emitting diodes). Contrary to well-developed Ir(III)-based red and green phosphorescent complexes, the efficient blue emitters are rare reported. Like the development of the LED, the absence of efficient and stable blue materials hinders the widely practical application of the OLEDs. Inspired by this, we designed two novel ancillary ligands of phenyl(pyridin-2-yl)phosphinate (ppp) and dipyridinylphosphinate (dpp) for efficient blue phosphorescent iridium complexes (dfppy)2Ir(ppp) and (dfppy)2Ir(dpp) (dfppy = 2-(2,4-difluorophenyl)pyridine) with good electron transport property. The devices using the new iridium phosphors display excellent electroluminescence (EL) performances with a peak current efficiency of 58.78 cd/A, a maximum external quantum efficiency of 28.3%, a peak power efficiency of 52.74 lm/W and negligible efficiency roll-off ratios. The results demonstrated that iridium complexes with pyridinylphosphinate ligands are potential blue phosphorescent materials for OLEDs. PMID:27929124

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs.

PubMed

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-12-02

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials. The phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca 0.979 Eu 0.006 Mn 0.015 )₉Gd(PO₄)₇ into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344).

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs

PubMed Central

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-01-01

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials. The phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca0.979Eu0.006Mn0.015)9Gd(PO4)7 into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344). PMID:28774101

Optogenetic Stimulation of Peripheral Vagus Nerves using Flexible OLED Display Technology to Treat Chronic Inflammatory Disease and Mental Health Disorders

DTIC Science & Technology

2016-03-31

transcutaneously via the outer ear using a high-resolution, addressable array of organic light emitting diodes (OLEDs) manufactured on a flexible...therapeutic optical stimulation in optogenetically modified neural tissue. Keywords: Optogenetics; neuromodulation; organic light emitting diode ...the outer ear using a high-resolution, two-dimensional (2-D), addressable array of red organic light - emitting diodes (OLEDs) manufactured on a thin

Direct Bandgap Group IV Materials

DTIC Science & Technology

2016-01-21

devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near...devices of planar light emitting diode , detector and laser ” 6/12/2015 PI and Co-PI information: - Name of Principal Investigators: Prof. H. H. Cheng...IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near infrared with direct emission, and (c) the first planar

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

PubMed Central

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-01-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

NASA Astrophysics Data System (ADS)

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-03-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

Efficient generation of 1.9  W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode.

PubMed

Hansen, A K; Christensen, M; Noordegraaf, D; Heist, P; Papastathopoulos, E; Loyo-Maldonado, V; Jensen, O B; Skovgaard, P M W

2016-11-10

Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40  μs.

Composite phase ceramic phosphor of Al₂O₃-Ce:YAG for high efficiency light emitting.

PubMed

Tang, Yanru; Zhou, Shengming; Chen, Chong; Yi, Xuezhuan; Feng, Yue; Lin, Hui; Zhang, Shuai

2015-07-13

We present our achievement which is a ceramic plate phosphorable to produce white light when directly combined with commercially available blue light emitting diodes. The ceramic phase structure is that the Al₂O₃ particle is uniformly distributed in the Ce:YAG matrix. The Al₂O₃-Ce:YAG ceramic phosphor has a better luminous efficacy than the transparent Ce:YAG ceramic phosphor under the same test condition. The Al₂O₃ particle plays an important role in promoting the luminous efficacy. The Al₂O₃ particle changes the propagation of the light in ceramic, and it reduces the total internal reflection. That is why the composite phase ceramic phosphor improves extraction efficiency of light.

Phosphorescent Organic Light Emitting Diodes Implementing Platinum Complexes

NASA Astrophysics Data System (ADS)

Ecton, Jeremy Exton

Organic light emitting diodes (OLEDs) are a promising approach for display and solid state lighting applications. However, further work is needed in establishing the availability of efficient and stable materials for OLEDs with high external quantum efficiency's (EQE) and high operational lifetimes. Recently, significant improvements in the internal quantum efficiency or ratio of generated photons to injected electrons have been achieved with the advent of phosphorescent complexes with the ability to harvest both singlet and triplet excitons. Since then, a variety of phosphorescent complexes containing heavy metal centers including Os, Ni, Ir, Pd, and Pt have been developed. Thus far, the majority of the work in the field has focused on iridium based complexes. Platinum based complexes, however, have received considerably less attention despite demonstrating efficiency's equal to or better than their iridium analogs. In this study, a series of OLEDs implementing newly developed platinum based complexes were demonstrated with efficiency's or operational lifetimes equal to or better than their iridium analogs for select cases. In addition to demonstrating excellent device performance in OLEDs, platinum based complexes exhibit unique photophysical properties including the ability to form excimer emission capable of generating broad white light emission from a single emitter and the ability to form narrow band emission from a rigid, tetradentate molecular structure for select cases. These unique photophysical properties were exploited and their optical and electrical properties in a device setting were elucidated. Utilizing the unique properties of a tridentate Pt complex, Pt-16, a highly efficient white device employing a single emissive layer exhibited a peak EQE of over 20% and high color quality with a CRI of 80 and color coordinates CIE(x=0.33, y=0.33). Furthermore, by employing a rigid, tetradentate platinum complex, PtN1N, with a narrow band emission into a microcavity organic light emitting diode (MOLED), significant enhancement in the external quantum efficiency was achieved. The optimized MOLED structure achieved a light out-coupling enhancement of 1.35 compared to the non-cavity structure with a peak EQE of 34.2%. In addition to demonstrating a high light out-coupling enhancement, the microcavity effect of a narrow band emitter in a MOLED was elucidated.

Top-emitting organic light-emitting diodes.

PubMed

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

2016-10-01

The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

Surface photonic crystal structures for LED emission modification

NASA Astrophysics Data System (ADS)

Uherek, Frantisek; Škriniarová, Jaroslava; Kuzma, Anton; Šušlik, Łuboš; Lettrichova, Ivana; Wang, Dong; Schaaf, Peter

2017-12-01

Application of photonic crystal structures (PhC) can be attractive for overall and local enhancement of light from patterned areas of the light emitting diode (LED) surface. We used interference and near-field scanning optical microscope lithography for patterning of the surface of GaAs/AlGaAs based LEDs emitted at 840 nm. Also new approach with patterned polydimethylsiloxane (PDMS) membrane applied directly on the surface of red emitting LED was investigated. The overall emission properties of prepared LED with patterned structure show enhanced light extraction efficiency, what was documented from near- and far-field measurements.

Modeling and studying of white light emitting diodes based on CdS/ZnS spherical quantum dots

NASA Astrophysics Data System (ADS)

Hasanirokh, K.; Asgari, A.

2018-07-01

In this paper, we propose a quantum dot (QD) based white light emitting diode (WLED) structure to study theoretically the material gain and quantum efficiency of the system. We consider the spherical QDs with a II-VI semiconductor core (CdS) that covered with a wider band gap semiconductor acting as a shell (ZnS). In order to generate white light spectrum, we use layers with different dot size that can emit blue, green and red colors. The blue emission originating from CdS core combines to green/orange components originating from ZnS shell and creates an efficiency white light emission. To model this device, at first, we solve Schrödinger and Poisson equations self consistently and obtain eigen energies and wave functions. Then, we calculate the optical gain and internal quantum efficiency (IQE) of a CdS/ZnS LED sample. We investigate the structural parameter effects on the optical properties of the WLED. The numerical results show that the gain profile and IQE curves depend strongly on the structural parameters such as dot size, carrier density and volume scaling parameter. The gain profile becomes higher and wider with increasing the core radius while it becomes less and narrower with increasing the shell thickness. Furthermore, it is found that the volume scaling parameter can manage the system quantum efficiency.

Demonstration of a simplified optical mouse lighting module by integrating the non-Lambertian LED chip and the free-form surface.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han

2012-05-20

A cost-effective, high-throughput, and high-yield method for the efficiency enhancement of an optical mouse lighting module is proposed. We integrated imprinting technology and free-form surface design to obtain a lighting module with high illumination efficiency and uniform intensity distribution. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution of light-emitting diodes. A modulated light source was utilized to add a compact free-form surface element to create a lighting module with 95% uniformity and 80% optical efficiency.

LED intense headband light source for fingerprint analysis

DOEpatents

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

Enhanced performances for top-emitting white organic light-emitting diodes by utilizing green phosphor as energy transfer medium

NASA Astrophysics Data System (ADS)

Deng, Lingling; Bao, Yiyang; Zhang, Yanan; Peng, Ling; Zhu, Wenjing; Zhao, Yue; Xu, Yewen; Chen, Shufen

2016-06-01

In top-emitting white organic light-emitting diodes (TWOLEDs), the device performances attribute to the several important factors, such as exciton profile, energy transfer, and microcavity effect. In this paper, a TWOLED containing a heterojunction blue emission layer (EML) and a red EML is reported. A host material with high triplet energy level is employed for the adjacent blue and red EML, while the inefficient red emission reduces the emission efficiency of the TWOLED. In order to enhance the red emission efficiency, mixed-host and co-doping technologies are used in the red EML. By mixing the hole transporting and electron transporting host materials, the exciton recombination zone extends to the red EML to increase the red emission intensity and reduce the efficiency roll-off. And by co-doping a green phosphor into the red EML as the energy transfer medium, the energy transfer rate is enhanced, and then the current efficiency increases. Besides, both the mixed-host and co-doping change the carrier transport and the exciton recombination zone, which further affects the microcavity resonance in the devices. Due to the enhancement on the red emission intensity and the shift of resonant wavelength, the chromaticity of the TWOLED is improved.

Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.

2015-01-14

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging formore » both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.« less

Potatoes in Space

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Controlling surface property of K2SiF6:Mn4+ for improvement of lighting-emitting diode reliability

NASA Astrophysics Data System (ADS)

Kim, Juseong; Jang, Inseok; Song, Gwang Yeom; Kim, Wan-Ho; Jeon, Sie-Wook; Kim, Jae-Pil

2018-05-01

The surface property of moisture-sensitive K2SiF6:Mn4+ (KSF) as a red-emitting phosphor was controlled through dry-type surface modification in order to improve the photo-performance and reliability of lighting-emitting diode (LED). The phosphor surface was modified with silane coupling agents having different carbon chain length by plasma-assisted method. Comparing between as-prepared and modified KSF, water-resistance and photo-emission efficiency were enhanced due to the formation of hydrophobic shell and the elimination of surface quenching sites. Moreover, the dispersibility of phosphor was increased as increasing the carbon chain length of silane because the interfacial affinity between phosphor and encapsulant was improved. After fabricating LED device, the enhancement of photo-performance and long-term reliability could be successfully achieved in LED device with modified phosphor. It is attributed to that the degradation of phosphor efficiency by moisture was suppressed and heat dissipation in LED PKG was improved through the surface modification.

Improved efficiency in blue phosphorescent organic light-emitting diodes by the stepwise doping structure

NASA Astrophysics Data System (ADS)

Yang, Liping; Wang, Xiaoping; Kou, Zhiqi; Ji, Changyan

2017-04-01

The electro-optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the stepwise doping structure in the emitting layer (EML). A series of multi-EML devices with different doping concentration of blue dopant (FIrpic) are fabricated. The effect of the stepwise doping structure close to the electron transport layer is more obvious than that close to the hole transport layer. When the doping concentration increases gradually from the hole injection side to the electron injection side, the maximum values of the luminance, current and power efficiency can reach to 9745 cd/m2 (at 9 V), 32.0 cd/A and 25.1 lm/W in the device with the asymmetric tri-EML structure, which is improved by about 10% compared with that in the bi-EML device. When the number of the EML is four, the performance of the device becomes worse because of the interface effect resulting from different concentration of dopant.

DNA bases thymine and adenine in bio-organic light emitting diodes.

PubMed

Gomez, Eliot F; Venkatraman, Vishak; Grote, James G; Steckl, Andrew J

2014-11-24

We report on the use of nucleic acid bases (NBs) in organic light emitting diodes (OLEDs). NBs are small molecules that are the basic building blocks of the larger DNA polymer. NBs readily thermally evaporate and integrate well into the vacuum deposited OLED fabrication. Adenine (A) and thymine (T) were deposited as electron-blocking/hole-transport layers (EBL/HTL) that resulted in increases in performance over the reference OLED containing the standard EBL material NPB. A-based OLEDs reached a peak current efficiency and luminance performance of 48 cd/A and 93,000 cd/m(2), respectively, while T-based OLEDs had a maximum of 76 cd/A and 132,000 cd/m(2). By comparison, the reference OLED yielded 37 cd/A and 113,000 cd/m(2). The enhanced performance of T-based devices is attributed to a combination of energy levels and structured surface morphology that causes more efficient and controlled hole current transport to the emitting layer.

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Optically Driven Q-Switches For Lasers

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1994-01-01

Optically driven Q-switches for pulsed lasers proposed, taking place of acousto-optical, magneto-optical, and electro-optical switches. Optical switching beams of proposed Q-switching most likely generated in pulsed diode lasers or light-emitting diodes, outputs of which are amplitude-modulated easily by direct modulation of relatively small input currents. Energy efficiencies exceed those of electrically driven Q-switches.

Manipulating Refractive Index in Organic Light-Emitting Diodes.

PubMed

Salehi, Amin; Chen, Ying; Fu, Xiangyu; Peng, Cheng; So, Franky

2018-03-21

In a conventional organic light-emitting diode (OLED), only a fraction of light can escape to the glass substrate and air. Most radiation is lost to two major channels: waveguide modes and surface plasmon polaritons. It is known that reducing the refractive indices of the constituent layers in an OLED can enhance light extraction. Among all of the layers, the refractive index of the electron transport layer (ETL) has the largest impact on light extraction because it is the layer adjacent to the metallic cathode. Oblique angle deposition (OAD) provides a way to manipulate the refractive index of a thin film by creating an ordered columnar void structure. In this work, using OAD, the refractive index of tris(8-hydroxyquinoline)aluminum (Alq3) can be tuned from 1.75 to 1.45. With this low-index ETL deposited by OAD, the resulting phosphorescent OLED shows nearly 30% increase in light extraction efficiency.

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

PubMed

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Synthesis and luminescent properties of Tb3Al5O12:Ce3+ phosphors for warm white light emitting diodes

NASA Astrophysics Data System (ADS)

Meng, Qinghuan; Liu, Ying; Fu, Yujie; Zu, Yuangang; Zhou, Zhenbao

2018-01-01

A series of Tb3Al5O12:Ce3+ phosphors were successfully synthesized by a precipitation method. The pure Tb3Al5O12 phase was obtained in the synthesized Tb3Al5O12:Ce3+ phosphors after heat treatments at 500 °C in air for 3 h. The excitation spectra of Tb3Al5O12:Ce3+ phosphors include excitation bands corresponding to Tb3+ and Ce3+ ions. Under the excitation at 455 nm, Tb3Al5O12:Ce3+ phosphors show emission band at around 553 nm. The critical doping concentration of Ce3+ in Tb3Al5O12 is 6mol%, which shows the highest emission intensity. White light-emitting diodes were fabricated by combining InGaN-based blue light-emitting diodes with Tb3Al5O12:Ce3+ and Y3Al5O12:Ce3+ phosphors. The Tb3Al5O12:Ce3+ based white light-emitting diode shows a lower color temperature than that of Y3Al5O12:Ce3+ based white light-emitting diode. The experimental results clearly indicate that the prepared Tb3Al5O12:Ce3+ has potential applications in white light emitting diodes.

High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films.

PubMed

Purandare, Sumit; Gomez, Eliot F; Steckl, Andrew J

2014-03-07

Organic light-emitting diodes (OLED) were fabricated on flexible and transparent reconstituted cellulose obtained from wood pulp. Cellulose is naturally available, abundant, and biodegradable and offers a unique substrate alternative for the fabrication of flexible OLEDs. Transparent cellulose material was formed by dissolution of cellulose in an organic solvent (dimethyl acetamide) at elevated temperature (165 °C) in the presence of a salt (LiCl). The optical transmission of 40-μm thick transparent cellulose sheet averaged 85% over the visible spectrum. High brightness and high efficiency thin film OLEDs were fabricated on transparent cellulose films using phosphorescent Ir(ppy)3 as the emitter material. The OLEDs achieved current and luminous emission efficiencies as high as 47 cd A(-1) and 20 lm W(-1), respectively, and a maximum brightness of 10,000 cd m(-2).

High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films

NASA Astrophysics Data System (ADS)

Purandare, Sumit; Gomez, Eliot F.; Steckl, Andrew J.

2014-03-01

Organic light-emitting diodes (OLED) were fabricated on flexible and transparent reconstituted cellulose obtained from wood pulp. Cellulose is naturally available, abundant, and biodegradable and offers a unique substrate alternative for the fabrication of flexible OLEDs. Transparent cellulose material was formed by dissolution of cellulose in an organic solvent (dimethyl acetamide) at elevated temperature (165 °C) in the presence of a salt (LiCl). The optical transmission of 40-μm thick transparent cellulose sheet averaged 85% over the visible spectrum. High brightness and high efficiency thin film OLEDs were fabricated on transparent cellulose films using phosphorescent Ir(ppy)3 as the emitter material. The OLEDs achieved current and luminous emission efficiencies as high as 47 cd A-1 and 20 lm W-1, respectively, and a maximum brightness of 10 000 cd m-2.

Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

DOEpatents

Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

2014-06-03

Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

PubMed

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Highly Efficient Carbon Dots with Reversibly Switchable Green-Red Emissions for Trichromatic White Light-Emitting Diodes.

PubMed

Yuan, Biao; Guan, Shanyue; Sun, Xingming; Li, Xiaoming; Zeng, Haibo; Xie, Zheng; Chen, Ping; Zhou, Shuyun

2018-05-09

Carbon dots (CDs) have potentials to be utilized in optoelectronic devices, bioimaging, and photocatalysis. The majority of the current CDs with high quantum yield to date were limited in the blue light emission region. Herein, on the basis of surface electron-state engineering, we report a kind of CDs with reversible switching ability between green and red photoluminescence with a quantum yield (QY) of both up to 80%. Highly efficient green and red solid-state luminescence is realized by doping CDs into a highly transparent matrix of methyltriethoxysilane and 3-triethoxysilylpropylamine to form CDs/gel glasses composites with QYs of 80 and 78%. The CDs/gel glasses show better transmittance in visible light bands and excellent thermal stability. A blue-pumped CDs/gel glasses phosphor-based trichromatic white light-emitting diode (WLED) is realized, whose color rendering index is 92.9. The WLED gets the highest luminous efficiency of 71.75 lm W -1 in CDs-based trichromatic WLEDs. This work opens a door for developing highly efficient green- and red-emissive switching CDs which were used as phosphors for WLEDs and have the tendency for applications in other fields, such as sensing, bioimaging, and photocatalysis.

Hole trap formation in polymer light-emitting diodes under current stress

NASA Astrophysics Data System (ADS)

Niu, Quan; Rohloff, Roland; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.; Crǎciun, N. Irina

2018-06-01

Polymer light-emitting diodes (PLEDs) are attractive for use in large-area displays and lighting panels, but their limited stability under current stress impedes commercialization. In spite of large efforts over the last two decades a fundamental understanding of the degradation mechanisms has not been accomplished. Here we demonstrate that the voltage drift of a PLED driven at constant current is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. The observed trap formation rate is consistent with exciton-free hole interactions as the main mechanism behind PLED degradation, enabling us to unify the degradation behaviour of various poly(p-phenylene) derivatives. The knowledge that hole trap formation is the cause of PLED degradation means that we can suppress the negative effect of hole traps on voltage and efficiency by blending the light-emitting polymer with a large-bandgap semiconductor. Owing to trap-dilution these blended PLEDs show unprecedented stability.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-07-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun; Leung, Benjamin

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantagesmore » of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.« less

Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

NASA Astrophysics Data System (ADS)

Saikia, D.; Sarma, R.

2017-06-01

Vanadium pentoxide layer deposited on the fluorine-doped tin oxide (FTO) anode by vacuum deposition has been investigated in organic light-emitting diode (OLED). With 12 nm optimal thickness of V2O5, the luminance efficiency is increased by 1.66 times compared to the single FTO-based OLED. The improvement of current efficiency implies that there is a better charge injection and better controlling of hole current. To investigate the performance of OLED by the buffer layer, V2O5 films of different thicknesses were deposited on the FTO anode and their J- V and L- V characteristics were studied. Further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FE-SEM images. This result indicates that the V2O5 (12 nm) buffer layer is a good choice for increasing the efficiency of FTO-based OLED devices within the tunnelling region. Here the maximum value of current efficiency is found to be 2.83 cd / A.

Transparent Ti-In-Sn-O multicomponent anodes for highly efficient phosphorescent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lim, Jong-Wook; Jun Kang, Seong; Lee, Sunghun; Kim, Jang-Joo; Kim, Han-Ki

2012-07-01

We report on transparent Ti-In-Sn-O (TITO) multicomponent anodes prepared by co-sputtering anatase TiO2-x and ITO targets to produce highly efficient phosphorescent organic light emitting diodes (OLEDs). In spite of the incorporation of low cost TiO2, the crystalline TITO electrode annealed at temperature of 600 °C showed a sheet resistance of 18.06 Ω/sq, an optical transmittance of 87.96% at a wavelength of 550 nm, and a work function of 4.71 eV comparable to conventional ITO electrode. Both the quantum (21.69%) and power efficiencies (90.92 lm/W) of the phosphorescent OLED fabricated on the TITO anode were higher than those of the OLED with the reference ITO anode due to the high transparency of the TITO electrodes. This indicates that the TITO electrode is a promising indium-saving electrode that can replace high-cost ITO electrodes in the manufacture of low-cost, highly efficient phosphorescent OLEDs.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-08-18

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resultedmore » from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.« less

Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

NASA Astrophysics Data System (ADS)

Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

2015-11-01

In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Nana; Cheng, Lu; Wang, Jianpu, E-mail: iamjpwang@njtech.edu.cn

Amino acid self-assembled monolayers are used in the fabrication of light-emitting diodes based on organic-inorganic halide perovskites. The monolayers of amino acids provide modified interfaces by anchoring to the surfaces of ZnO charge-transporting layers using carboxyl groups, leaving the amino groups to facilitate the nucleation of MAPbBr{sub 3} perovskite films. This surface-modification strategy, together with chlorobenzene-assisted fast crystallization method, results in good surface coverage and reduced defect density of the perovskite films. These efforts lead to green perovskite light emitting diodes with a low turn-on voltage of 2 V and an external quantum efficiency of 0.43% at a brightness of ∼5000 cdmore » m{sup −2}.« less

Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chung, Seungjun; Lee, Jae-Hyun; Jeong, Jaewook; Kim, Jang-Joo; Hong, Yongtaek

2009-06-01

We report substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes (OLEDs). Heat dissipation behavior of top-emission OLEDs fabricated on silicon, glass, and planarized stainless steel substrates was measured by using an infrared camera. Peak temperature measured from the backside of each substrate was saturated to be 21.4, 64.5, and 40.5 °C, 180 s after the OLED was operated at luminance of 10 000 cd/m2 and 80% luminance lifetime was about 198, 31, and 96 h, respectively. Efficient heat dissipation through the highly thermally conductive substrates reduced temperature increase, resulting in much improved OLED lifetime.

Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

PubMed

Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

2015-04-22

Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lo Savio, R.; Galli, M.; Liscidini, M.

We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission inmore » a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.« less

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

PubMed Central

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

PubMed Central

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-01-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration. PMID:27877712

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-10-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration.

Experimental effective intensity of steady and flashing light emitting diodes for aircraft anti-collision lighting.

DOT National Transportation Integrated Search

2013-08-01

Research was conducted to determine the effective intensity of flashing lights that incorporate light-emitting diodes (LEDs). LEDs require less power and have the ability to flash without the addition of moving parts. Compared with incandescent bulbs...

Full phosphorescent white-light organic light-emitting diodes with improved color stability and efficiency by fine tuning primary emission contributions

NASA Astrophysics Data System (ADS)

Hua, Wang; Du, Xiaogang; Su, Wenming; Lin, Wenjing; Zhang, Dongyu

2014-02-01

In this paper, a novel type of white-light organic light emitting diode (OLED) with high color stability was reported, in which the yellow-light emission layer of (4,4'-N,N'-dicarbazole)biphenyl (CBP) : tris(2-phenylquinoline-C2,N')iridium(III) (Ir(2-phq)3) was sandwiched by double blue-light emission layers of 1,1-bis-[(di-4-tolylamino)pheny1]cyclohexane (TAPC) : bis[4,6-(di-fluorophenyl)-pyridinato-N,C2']picolinate (FIrpic) and tris[3-(3-pyridyl)mesityl]borane (3TPYMB):FIrpic. And, it exhibited the maximum current efficiency of 33.1 cd/A, the turn-on voltage at about 3 V and the maximum luminance in excess of 20000 cd/m2. More important, it realized very stable white-light emission, and its CIE(x, y) coordinates only shift from (0.34, 0.37) to (0.33, 0.37) as applied voltage increased from 5 V to 12 V. It is believed that the new scheme in emission layer of white-light OLED can fine tune the contribution of primary emission with applied voltage changed, resulting in high quality white-light OLED.

Photoluminescence of Copper-Doped Lithium Niobate Crystals

NASA Astrophysics Data System (ADS)

Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

2018-05-01

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

Light intensity and quality from sole-source light-emitting diodes impact growth, morphology, and nutrient content of Brassica microgreens

USDA-ARS?s Scientific Manuscript database

Multi-layer vertical production systems using sole-source (SS) lighting can be used for microgreen production; however, traditional SS lighting can consume large amounts of electrical energy. Light-emitting diodes (LEDs) offer many advantages over conventional light sources including: high photoelec...

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Moth eye-inspired anti-reflective surfaces for improved IR optical systems & visible LEDs fabricated with colloidal lithography and etching.

PubMed

Chan, Lesley W; Morse, Daniel E; Gordon, Michael J

2018-05-08

Near- and sub-wavelength photonic structures are used by numerous organisms (e.g. insects, cephalopods, fish, birds) to create vivid and often dynamically-tunable colors, as well as create, manipulate, or capture light for vision, communication, crypsis, photosynthesis, and defense. This review introduces the physics of moth eye (ME)-like, biomimetic nanostructures and discusses their application to reduce optical losses and improve efficiency of various optoelectronic devices, including photodetectors, photovoltaics, imagers, and light emitting diodes. Light-matter interactions at structured and heterogeneous surfaces over different length scales are discussed, as are the various methods used to create ME-inspired surfaces. Special interest is placed on a simple, scalable, and tunable method, namely colloidal lithography with plasma dry etching, to fabricate ME-inspired nanostructures in a vast suite of materials. Anti-reflective surfaces and coatings for IR devices and enhancing light extraction from visible light emitting diodes are highlighted.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

NASA Astrophysics Data System (ADS)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S.

Solid-state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light-emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission,more » can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state-of-the-art input-power-density-dependent power-conversion efficiencies; potential improvements both in their peak power-conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.« less

Evaluation of inorganic and organic light-emitting diode displays for signage application

NASA Astrophysics Data System (ADS)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the conventional, inorganic LEDs. But, signage panels based on OLEDs can be made cheaper by avoiding the use of acrylic sheet and reflective gratings. Moreover, the distributed light output and light weight of OLEDs and the potential to be built inexpensively on flexible substrates can make OLEDs more beneficial for future signage applications than the inorganic LEDs.

Collimating lens for light-emitting-diode light source based on non-imaging optics.

PubMed

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

High power VCSELs for miniature optical sensors

NASA Astrophysics Data System (ADS)

Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

2010-02-01

Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

High efficiency yellow organic light-emitting diodes with optimized barrier layers

NASA Astrophysics Data System (ADS)

Mu, Ye; Zhang, Shiming; Yue, Shouzhen; Wu, Qingyang; Zhao, Yi

2015-12-01

High efficiency Iridium (III) bis (4-phenylthieno [3,2-c] pyridinato-N,C2‧) acetylacetonate (PO-01) based yellow organic light-emitting devices are fabricated by employing multiple emission layers. The efficiency of the device using 4,4‧,4″-tris(N-carbazolyl) triphenylamine (TCTA) as potential barrier layer (PBL) outperforms those devices based on other PBLs and detailed analysis is carried out to reveal the mechanisms. A forward-viewing current efficiency (CE) of 65.21 cd/A, which corresponds to a maximum total CE of 110.85 cd/A is achieved at 335.8 cd/m2 in the optimized device without any outcoupling enhancement structures.

Stimulated emission within the exciplex band by plasmonic-nanostructured polymeric heterojunctions

NASA Astrophysics Data System (ADS)

Zhang, Xinping; Li, Hongwei; Wang, Yimeng; Liu, Feifei

2015-03-01

Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix.Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00140d

Properties of excited states in organic light emitting diodes and lasers

NASA Astrophysics Data System (ADS)

Giebink, Noel C.

The field of organic semiconductors has grown rapidly over the past decade with the development of light emitting diodes, solar cells, and lasers that promise a new generation of low-cost, flexible optoelectronic devices. In each case, the behavior of molecular excited states, or excitons, is of fundamental importance. The present study explores the nature and interactions of such excited states in the attempt to develop an electrically pumped organic semiconductor laser, and to improve the performance and operational stability of organic light emitting diodes. We begin by investigating intrinsic loss processes in optically pumped organic semiconductor lasers and demonstrate that exciton annihilation implies a fundamental limit that will prevent lasing by electrical injection in currently known materials. Searching for an alternative approach to reach threshold leads us to study metastable geminate charge pairs, where we find that optically generated excitons can be accumulated over time in an external electric field via these intermediate states. Upon field turn-off, the excitons are immediately restored, leading to a sudden burst of excitation density over 30 times higher than that generated by the pump alone. Unfortunately, we identify limitations that have thus far prevented reaching laser threshold with this technique. In a parallel push toward high power density, we investigate the origins of quantum efficiency roll-off in organic light emitting diodes (OLEDs) and find that it is dominated by loss of charge balance in the majority of fluorescent and phosphorescent devices. The second major theme of this work involves understanding the intrinsic modes of OLED operational degradation. Based on extensive modeling and supported directly by experimental evidence, we identify exciton-charge carrier annihilation reactions as a principle degradation pathway. Exploiting the diffusion of triplet excitons, we show that fluorescence and phosphorescence can be combined to increase the operational lifetime of white OLEDs and still retain the potential for unity internal quantum efficiency.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

Low-picomolar limits of detection using high-power light-emitting diodes for fluorescence.

PubMed

de Jong, Ebbing P; Lucy, Charles A

2006-05-01

Fluorescence detectors are ever more frequently being used with light-emitting diodes (LEDs) as the light source. Technological advances in the solid-state lighting industry have produced LEDs which are also suitable tools in analytical measurements. LEDs are now available which deliver 700 mW of radiometric power. While this greater light power can increase the fluorescence signal, it is not trivial to make proper use of this light. This new generation of LEDs has a large emitting area and a highly divergent beam. This presents a classic problem in optics where one must choose between either a small focused light spot, or high light collection efficiency. We have selected for light collection efficiency, which yields a light spot somewhat larger than the emitting area of the LED. This light is focused onto a flow cell. Increasing the detector cell internal diameter (i.d.) produces gains in (sensitivity)3. However, since the detector cell i.d. is smaller than the LED spot size, scattering of excitation light towards the detector remains a significant source of background signal. This can be minimized through the use of spectral filters and spatial filters in the form of pinholes. The detector produced a limit of detection (LOD) of 3 pM, which is roughly three orders of magnitude lower than other reports of LED-based fluorescence detectors. Furthermore, this LOD comes within a factor of six of much more expensive laser-based fluorescence systems. This detector has been used to monitor a separation from a gel filtration column of fluorescently labeled BSA from residual labeling reagent. The LOD of fluorescently labeled BSA is 25 pM.

Integrated flexible handheld probe for imaging and evaluation of iridocorneal angle

NASA Astrophysics Data System (ADS)

Shinoj, Vengalathunadakal K.; Murukeshan, Vadakke Matham; Baskaran, Mani; Aung, Tin

2015-01-01

An imaging probe is designed and developed by integrating a miniaturized charge-coupled diode camera and light-emitting diode light source, which enables evaluation of the iridocorneal region inside the eye. The efficiency of the prototype probe instrument is illustrated initially by using not only eye models, but also samples such as pig eye. The proposed methodology and developed scheme are expected to find potential application in iridocorneal angle documentation, glaucoma diagnosis, and follow-up management procedures.

Polarization methods for diode laser excitation of solid state lasers

DOEpatents

Holtom, Gary R.

2008-11-25

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that absorbs light having a first polarization and emits light having a second polarization. Using such pumping with laser cavity dispersion control, pulse durations of less than 100 fs can be achieved.

Safety Evaluation of Converting Traffic Signals From Incandescent to Light-emitting Diodes : Summary Report

DOT National Transportation Integrated Search

2013-08-01

Across the Nation, many agencies have been replacing conventional incandescent light bulbs in traffic signals with light-emitting diodes (LED) (see figure 1 and figure 2). LEDs are primarily installed to reduce energy consumption and decrease mainten...

Stable Light-Emitting Diodes Using Phase-Pure Ruddlesden-Popper Layered Perovskites.

PubMed

Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Stoumpos, Constantinos C; Soe, Chan Myae Myae; Yoo, Jinkyoung; Crochet, Jared; Tretiak, Sergei; Even, Jacky; Sadhanala, Aditya; Azzellino, Giovanni; Brenes, Roberto; Ajayan, Pulickel M; Bulović, Vladimir; Stranks, Samuel D; Friend, Richard H; Kanatzidis, Mercouri G; Mohite, Aditya D

2018-02-01

State-of-the-art light-emitting diodes (LEDs) are made from high-purity alloys of III-V semiconductors, but high fabrication cost has limited their widespread use for large area solid-state lighting. Here, efficient and stable LEDs processed from solution with tunable color enabled by using phase-pure 2D Ruddlesden-Popper (RP) halide perovskites with a formula (CH 3 (CH 2 ) 3 NH 3 ) 2 (CH 3 NH 3 ) n -1 Pb n I 3 n +1 are reported. By using vertically oriented thin films that facilitate efficient charge injection and transport, efficient electroluminescence with a radiance of 35 W Sr -1 cm -2 at 744 nm with an ultralow turn-on voltage of 1 V is obtained. Finally, operational stability tests suggest that phase purity is strongly correlated to stability. Phase-pure 2D perovskites exhibit >14 h of stable operation at peak operating conditions with no droop at current densities of several Amperes cm -2 in comparison to mixtures of 2D/3D or 3D perovskites, which degrade within minutes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroluminescence of organic light-emitting diodes consisting of an undoped (pbi)2Ir(acac) phosphorescent layer

NASA Astrophysics Data System (ADS)

Lei, Xia; Yu, Junsheng; Zhao, Juan; Jiang, Yadong

2011-11-01

The electroluminescence (EL) characteristics of phosphorescent organic light-emitting diodes (OLEDs) with an undoped bis(1,2-dipheny1-1H-benzoimidazole) iridium (acetylacetonate) [(pbi)2Ir(acac)] emissive layer (EML) of various film thicknesses were studied. The results showed that the intensity of green light emission decreased rapidly with the increasing thickness of (pbi)2Ir(acac), which was relevant to the triplet excimer emission. It suggested that the concentration quenching of monomer emission in the undoped (pbi)2Ir(acac) film was mainly due to the formation of triplet excimer and partly due to the triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA). A green OLED with a maximum luminance of 26,531 cd/m2, a current efficiency of 36.2 cd/A, and a power efficiency of 32.4 lm/W was obtained, when the triplet excimer emission was eliminated. Moreover, the white OLED with low efficiency roll-off was realized due to the broadened recombination zone and reduced quenching effects in the EML when no electron blocking layer was employed.

Highly Reflective Nonalloyed Ni/Ag/Pt Contact to Mg-Si Codoped p-GaN for Enhanced Efficiency of Light-Emitting Diodes.

PubMed

Oh, Munsik; Kim, Hyunsoo

2015-10-01

The authors report enhanced efficiency of GaN-based light-emitting diodes (LEDs) fabricated with highly reflective nonalloyed Ni/Ag/Pt contact. The Ni/Ag/Pt contact formed on the Mg-Si codoped p-GaN produced the low specific contact resistance of 7.9 x 10(-4) Ωcm2 under as-deposited condition, which is comparable to the reference reflector (annealed at 500 °C for 1 min in oxygen ambient). Current-voltage-temperature measurements and the secondary ion mass spectroscopy revealed that the ohmic mechanism of the nonalloyed Ni/Ag/Pt contact is due to the more generated deep-level states associated with Mg-Si codoping, which act as the efficient hopping centers for the carrier transport at the contact/p-GaN interface. Due to the absence of interfacial reaction, the nonalloyed Ni/Ag/Pt contact showed much higher optical reflectivity (93.4% at 450 nm) as compared to the annealed sample (57.7%), resulting in a 40.5% brighter light output power as compared to the reference LEDs.

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

PubMed

Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

2018-04-01

Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multicolor white light-emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

Chi, Solomon W. S.; Chen, Tzer-Perng; Tu, Chuan-Cheng; Chang, Chih-Sung; Tsai, Tzong-Liang; Hsieh, Mario C. C.

2004-01-01

Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high efficiency. Several white LED technologies appear capable of meeting the technical requirements of illumination. In this paper we present a new multi-color white (MCW) LED as a high luminous efficacy, high color rendering index and low cost white illuminator. The device consists of two LED chips, one is AlInGaN LED for emitting shorter visible spectra, another is AlInGaP LED for emitting longer visible spectra. At least one chip in the MCW-LED has two or more transition energy levels used for emitting two or more colored lights. The multiple colored lights generated from the MCW-LED can be mixed into a full-spectral white light. Besides, there is no phosphors conversion layer used in the MCW-LED structure. Therefore, its color rendering property and illumination efficiency are excellent. The Correlated Color Temperature (CCT) of the MCW-LED may range from 2,500 K to over 10,000 K. The theoretical General Color Rendering Index (Ra) could be as high as 94, which is close to the incandescent and halogen sources, while the Ra of binary complementary white (BCW) LED is about 30 ~ 45. Moreover, compared to the expensive ternary RGB (Red AlInGaP + Green AlInGaN + Blue AlInGaN) white LED sources, the MCW-LED uses only one AlInGaN chip in combination with one cheap AlInGaP chip, to form a low cost, high luminous performance white light source. The MCW-LED is an ideal light source for general-purpose illumination applications.

Mulifunctional Dendritic Emitter: Aggregation-Induced Emission Enhanced, Thermally Activated Delayed Fluorescent Material for Solution-Processed Multilayered Organic Light-Emitting Diodes

PubMed Central

Matsuoka, Kenichi; Albrecht, Ken; Yamamoto, Kimihisa; Fujita, Katsuhiko

2017-01-01

Thermally activated delayed fluorescence (TADF) materials emerged as promising light sources in third generation organic light-emitting diodes (OLED). Much effort has been invested for the development of small molecular TADF materials and vacuum process-based efficient TADF-OLEDs. In contrast, a limited number of solution processable high-molecular weight TADF materials toward low cost, large area, and scalable manufacturing of solution processed TADF-OLEDs have been reported so far. In this context, we report benzophenone-core carbazole dendrimers (GnB, n = generation) showing TADF and aggregation-induced emission enhancement (AIEE) properties along with alcohol resistance enabling further solution-based lamination of organic materials. The dendritic structure was found to play an important role for both TADF and AIEE activities in the neat films. By using these multifunctional dendritic emitters as non-doped emissive layers, OLED devices with fully solution processed organic multilayers were successfully fabricated and achieved maximum external quantum efficiency of 5.7%. PMID:28139768

Mulifunctional Dendritic Emitter: Aggregation-Induced Emission Enhanced, Thermally Activated Delayed Fluorescent Material for Solution-Processed Multilayered Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Matsuoka, Kenichi; Albrecht, Ken; Yamamoto, Kimihisa; Fujita, Katsuhiko

2017-01-01

Thermally activated delayed fluorescence (TADF) materials emerged as promising light sources in third generation organic light-emitting diodes (OLED). Much effort has been invested for the development of small molecular TADF materials and vacuum process-based efficient TADF-OLEDs. In contrast, a limited number of solution processable high-molecular weight TADF materials toward low cost, large area, and scalable manufacturing of solution processed TADF-OLEDs have been reported so far. In this context, we report benzophenone-core carbazole dendrimers (GnB, n = generation) showing TADF and aggregation-induced emission enhancement (AIEE) properties along with alcohol resistance enabling further solution-based lamination of organic materials. The dendritic structure was found to play an important role for both TADF and AIEE activities in the neat films. By using these multifunctional dendritic emitters as non-doped emissive layers, OLED devices with fully solution processed organic multilayers were successfully fabricated and achieved maximum external quantum efficiency of 5.7%.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2017-11-01

The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation.

Long Persistent Light Emitting Diode Indicators

ERIC Educational Resources Information Center

Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

2007-01-01

An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

Electrochemical models for the radical annihilation reactions in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Armstrong, Neal R.; Anderson, Jeffrey D.; Lee, Paul A.; McDonald, Erin; Wightman, R. M.; Hall, Hank K.; Hopkins, Tracy; Padias, Anne; Thayumanavan, Sankaran; Barlow, Stephen; Marder, Seth R.

1998-12-01

Bilayer organic light emitting diodes (OLEDs), based upon vacuum deposited molecules, or single layer OLEDs, based upon spin-cast polymeric materials, doped with these same molecules, produce light from emissive states of the lumophores which are created through annihilation reactions of radical species, which can be modeled through solution electrochemistry. Difference seen in solution reduction and oxidation potentials of molecular components of OLEDs are a lower limit estimate to the differences in energy of these same radical species in the condensed phase environmental. The light emitted from an aluminum quinolate (Alq3)/triarylamine (TPD)-based OLED, or an Alq3/PVK single layers OLED, can be reproduce from solution cross reactions of Alq3/TPD+. The efficiency of this process increases as the oxidation potential of the TPD increases, due to added substituents. Radical cations and anions of solubilized version of quinacridone dopants (DIQA) which have been used to enhance efficiencies in these OLEDs, are shown to be electrochemically more stable than Alq3 and Alq3, and DIQA radical annihilation reactions produce the same emissive state as in the quinacridone-doped OLEDs. Electrochemical studies demonstrate the ways in which other dopants might enhance the efficiency and shift the color output of OLEDs, across the entire visible and near-IR spectrum. Chemical degradation pathways of these same molecular components, which they may undergo during OLED operation, are also revealed by these electrochemical studies.

Synergetic Influences of Mixed-Host Emitting Layer Structures and Hole Injection Layers on Efficiency and Lifetime of Simplified Phosphorescent Organic Light-Emitting Diodes.

PubMed

Han, Tae-Hee; Kim, Young-Hoon; Kim, Myung Hwan; Song, Wonjun; Lee, Tae-Woo

2016-03-09

We used various nondestructive analyses to investigate various host material systems in the emitting layer (EML) of simple-structured, green phosphorescent organic light-emitting diodes (OLEDs) to clarify how the host systems affect its luminous efficiency (LE) and operational stability. An OLED that has a unipolar single-host EML with conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) showed high operating voltage, low LE (∼26.6 cd/A, 13.7 lm/W), and short lifetime (∼4.4 h @ 1000 cd/m(2)). However, the combined use of a gradient mixed-host EML and a molecularly controlled HIL that has increased surface work function (WF) remarkably decreased operating voltage and improved LE (∼68.7 cd/A, 77.0 lm/W) and lifetime (∼70.7 h @ 1000 cd/m(2)). Accumulated charges at the injecting interfaces and formation of a narrow recombination zone close to the interfaces are the major factors that accelerate degradation of charge injection/transport and electroluminescent properties of OLEDs, so achievement of simple-structured OLEDs with high efficiency and long lifetime requires facilitating charge injection and balanced transport into the EML and distributing charge carriers and excitons in EML.

Advanced Oxidation of Tartrazine and Brilliant Blue with Pulsed Ultraviolet Light Emitting Diodes

PubMed Central

Scott, Robert; Mudimbi, Patrick; Miller, Michael E.; Magnuson, Matthew; Willison, Stuart; Phillips, Rebecca; Harper, Willie F.

2018-01-01

This study investigated the effect of ultraviolet light-emitting diodes (UVLEDs) coupled with hydrogen peroxide as an advanced oxidation process (AOP) for the degradation of two test chemicals. Brilliant Blue FCF consistently exhibited greater degradation than tartrazine, with 83% degradation after 300 minutes at the 100% duty cycle compared with only 17% degradation of tartrazine under the same conditions. These differences are attributable to the structural properties of the compounds. Duty cycle was positively correlated with the first-order rate constants (k) for both chemicals but, interestingly, negatively correlated with the normalized first-order rate constants (k/duty cycle). Synergistic effects of both hydraulic mixing and LED duty cycle were manifested as novel oscillations in the effluent contaminant concentration. Further, LED output and efficiency were dependent upon duty cycle and less efficient over time perhaps due to heating effects on semiconductor performance. PMID:28236826

High efficiency white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Gang; Dong, Weili; Gao, Hongyan; Tian, Xiaocui; Zhao, Lina; Jiang, Wenlong; Zhang, Xiyan

2015-06-01

The light emitting diodes with the structure of ITO/ m-MTDATA(20 nm)/NPB(10 nm)/CBP BCzVBi ( x, nm, 10%)/CBP(3 nm)/CBP: Ir(ppy)3: DCJTB(10 nm, 8 and 1%)/Bphen(30 nm)/Cs2CO3: Ag2O (2 nm, 20%)/Al (100 nm) employing phosphorescence sensitization and fluorescence doping, were manufactured. The performance of the devices was studied by adjusting the thickness of fluorescence dopant layer ( x = 15, 20, 25, and 30). The best performance was achieved when its thickness was 25 nm. The device has the maximum luminance of 20260 cd/m2 at applied voltage of 14 V and the maximum current efficiency of 11.70 cd/A at 7 V. The device displays a continuous change of color from yellow to white. The CIE coordinates change from (0.49, 0.48) to (0.32, 0.39) when the driving voltage is varied from 5 to 15 V.

Use of coupled wavelength ultraviolet light-emitting diodes for inactivation of bacteria in subsea oil-field injection water.

PubMed

Qiao, Yang; Chen, Daoyi; Wen, Diya

2018-06-04

The development of subsea injection water disinfection systems will enable the novel exploration of offshore oilfields. Ultraviolet light emitting diodes (UV-LEDs) with peak wavelengths at 255 nm, 280 nm, 350 nm, and combinations of 255 nm and 350 nm, and 280 nm and 350 nm were investigated in this study to determine their efficiency at disinfecting saprophytic bacteria, iron bacteria, and sulfate reducing bacteria. Results show that UV-LEDs with peak wavelengths at 280 nm were the most practical in this domain because of their high performance in both energy-efficiency and reactivation suppression, although 255 nm UV-LEDs achieved an optimal germicidal effect in dose-based experiments. The use of combined 280 nm and 350 nm wavelengths also induced synergistic bactericidal effects on saprophytic bacteria. Copyright © 2018. Published by Elsevier B.V.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

PubMed Central

2016-01-01

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal–organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%. PMID:27331079

Cascaded Emission Regions in 2.4 μm GaInAsSb Light Emitting Diode's for Improved Current Efficiency

NASA Astrophysics Data System (ADS)

Prineas, John; Yager, Jeff; Olesberg, Jonathon; Cao, Chuanshun; Reddy, Madhu; Coretsopoulos, Chris

2008-03-01

Infrared optoelectronics play an important role in sensing of molecules through characteristic vibrational resonances that occur at those wavelengths. For molecules in aqueous and at room temperature, where optical transistions tend to be broad, the broadband emission of light emitting diodes (LEDs) are well suited for obtaining molecular absorption spectra. The 2-2.6 μm range is an advantageous range for sensing of glucose. Voltages available in batteries and control electronics are limited to much higher voltages than those required to turn on an infrared LED, and moreover have limited current supply. Here, we demonstrate room temperature operature of 5-stage cascaded emission regions in 2-2.6 μm GaInAsSb LEDs. We report three times higher turn on voltage, and nine times improved current efficiency compared to a single stage device.

Multilayer white lighting polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Gong, Xiong; Wang, Shu; Heeger, Alan J.

2006-08-01

Organic and polymer light-emitting diodes (OLEDs/PLEDs) that emit white light are of interest and potential importance for use in active matrix displays (with color filters) and because they might eventually be used for solid-state lighting. In such applications, large-area devices and low-cost of manufacturing will be major issues. We demonstrated that high performance multilayer white emitting PLEDs can be fabricated by using a blend of luminescent semiconducting polymers and organometallic complexes as the emission layer, and water-soluble (or ethanol-soluble) polymers/small molecules (for example, PVK-SO 3Li) as the hole injection/transport layer (HIL/HTL) and water-soluble (or ethanol-soluble) polymers/small molecules (for example, t-Bu-PBD-SO 3Na) as the electron injection/transport layer (EIL/HTL). Each layer is spin-cast sequentially from solutions. Illumination quality light is obtained with stable Commission Internationale d'Eclairage coordinates, stable color temperatures, and stable high color rendering indices, all close to those of "pure" white. The multilayer white-emitting PLEDs exhibit luminous efficiency of 21 cd/A, power efficiency of 6 lm/W at a current density of 23 mA/cm2 with luminance of 5.5 x 10 4 cd/m2 at 16 V. By using water-soluble (ethanol-soluble) polymers/small molecules as HIL/HTL and polymers/small molecules as EIL/ETL, the interfacial mixing problem is solved (the emissive polymer layer is soluble in organic solvents, but not in water/ ethanol). As a result, this device architecture and process technology can potentially be used for printing large-area multiplayer light sources and for other applications in "plastic" electronics. More important, the promise of producing large areas of high quality white light with low-cost manufacturing technology makes the white multilayer white-emitting PLEDs attractive for the development of solid state light sources.

Two-In-One Method for Graphene Transfer: Simplified Fabrication Process for Organic Light-Emitting Diodes.

PubMed

Liu, Lihui; Shang, Wenjuan; Han, Chao; Zhang, Qing; Yao, Yao; Ma, Xiaoqian; Wang, Minghao; Yu, Hongtao; Duan, Yu; Sun, Jie; Chen, Shufen; Huang, Wei

2018-02-28

Graphene as one of the most promising transparent electrode materials has been successfully applied in organic light-emitting diodes (OLEDs). However, traditional poly(methyl methacrylate) (PMMA) transfer method usually results in hardly removed polymeric residues on the graphene surface, which induces unwanted leakage current, poor diode behavior, and even device failure. In this work, we proposed a facile and efficient two-in-one method to obtain clean graphene and fabricate OLEDs, in which the poly(9,9-di-n-octylfluorene-alt-(1,4-phenylene-(4-sec-butylphenyl)imino)-1,4-phenylene) (TFB) layer was inserted between the graphene and PMMA film both as a protector during the graphene transfer and a hole-injection layer in OLEDs. Finally, green OLED devices were successfully fabricated on the PMMA-free graphene/TFB film, and the device luminous efficiency was increased from 64.8 to 74.5 cd/A by using the two-in-one method. Therefore, the proposed two-in-one graphene transfer method realizes a high-efficient graphene transfer and device fabrication process, which is also compatible with the roll-to-roll manufacturing. It is expected that this work can enlighten the design and fabrication of the graphene-based optoelectronic devices.

Efficiency of solution-processed multilayer polymer light-emitting diodes using charge blocking layers

NASA Astrophysics Data System (ADS)

Kasparek, Christian; Rörich, Irina; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-01-01

By blending semiconducting polymers with the cross-linkable matrix ethoxylated-(4)-bisphenol-a-dimethacrylate (SR540), an insoluble layer is acquired after UV-illumination. Following this approach, a trilayer polymer light-emitting diode (PLED) consisting of a blend of poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) and SR540 as an electron-blocking layer, Super Yellow-Poly(p-phenylene vinylene) (SY-PPV) blended with SR540 as an emissive layer, and poly(9,9-di-n-octylfluorenyl-2,7-diyl) as a hole-blocking layer is fabricated from solution. The trilayer PLED shows a 23% increase in efficiency at low voltage as compared to a single layer SY-PPV PLED. However, at higher voltage, the advantage in current efficiency gradually decreases. A combined experimental and modelling study shows that the increased efficiency is not only due to the elimination of exciton quenching at the electrodes but also due to suppressed nonradiative trap-assisted recombination due to carrier confinement. At high voltages, holes can overcome the hole-blocking barrier, which explains the efficiency roll-off.

Highly Efficient Deep Blue Organic Light-Emitting Diodes Based on Imidazole: Significantly Enhanced Performance by Effective Energy Transfer with Negligible Efficiency Roll-off.

PubMed

Shan, Tong; Liu, Yulong; Tang, Xiangyang; Bai, Qing; Gao, Yu; Gao, Zhao; Li, Jinyu; Deng, Jian; Yang, Bing; Lu, Ping; Ma, Yuguang

2016-10-26

Great efforts have been devoted to develop efficient deep blue organic light-emitting diodes (OLEDs) materials meeting the standards of European Broadcasting Union (EBU) standard with Commission International de L'Eclairage (CIE) coordinates of (0.15, 0.06) for flat-panel displays and solid-state lightings. However, high-performance deep blue OLEDs are still rare for applications. Herein, two efficient deep blue emitters, PIMNA and PyINA, are designed and synthesized by coupling naphthalene with phenanthreneimidazole and pyreneimidazole, respectively. The balanced ambipolar transporting natures of them are demonstrated by single-carrier devices. Their nondoped OLEDs show deep blue emissions with extremely small CIE y of 0.034 for PIMNA and 0.084 for PyINA, with negligible efficiency roll-off. To take advantage of high photoluminescence quantum efficiency of PIMNA and large fraction of singlet exciton formation of PyINA, doped devices are fabricated by dispersing PyINA into PIMNA. A significantly improved maximum external quantum efficiency (EQE) of 5.05% is obtained through very effective energy transfer with CIE coordinates of (0.156, 0.060), and the EQE remains 4.67% at 1000 cd m -2 , which is among the best of deep blue OLEDs reported matching stringent EBU standard well.

Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

2017-11-01

Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

RGB Recombination Zone Tuning to Improve Optical Characteristics of White Organic Light-Emitting Diodes.

PubMed

Song, Wook; Meng, Mei; Cheah, KokWai; Zhu, Fu Rong; Kim, WooYoung

2015-05-01

White organic light emitting diodes (WOLEDs) were fabricated using blue, green and red emitting layers (EMLs). The device has a structure of ITO/NPB/EML/Alq3/Liq/Al. Here, to control the white color balance, the location of the blue EML in the WOLEDs was fixed and only the thickness of blue EML was changed while both thickness and position of the green and red EMLs were adjusted. When adjusting the thickness of blue EML, the occurrence area of recombination zone was changed to influence the green luminescence. When adjusting the location and thickness of red EML, it could be found that the current density is more sensitive to the location of red EML than its thickness. Furthermore, it was discovered that light was emitted due to the Förster energy transfer even if it was apart from the recombination zone. WOLEDs with a maximum luminance of 17,740 cd/m,2 an external quantum efficiency of 2.12% at 100 cd/m,2 CIE coordinates of (0.328,0.301) and a color temperature of 6,185 K were obtained.

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization.

PubMed

Wang, Chu; Li, Xianglong; Pan, Yuyu; Zhang, Shitong; Yao, Liang; Bai, Qing; Li, Weijun; Lu, Ping; Yang, Bing; Su, Shijian; Ma, Yuguang

2016-02-10

Photoluminescence (PL) efficiency and exciton utilization efficiency are two key parameters to harvest high-efficiency electroluminescence (EL) in organic light-emitting diodes (OLEDs). But it is not easy to simultaneously combine these two characteristics (high PL efficiency and high exciton utilization) into a fluorescent material. In this work, an efficient combination was achieved through two concepts of hybridized local and charge-transfer (CT) state (HLCT) and "hot exciton", in which the former is responsible for high PL efficiency while the latter contributes to high exciton utilization. On the basis of a tiny chemical modification in TPA-BZP, a green-light donor-acceptor molecule, we designed and synthesized CzP-BZP with this efficeient combination of high PL efficiency of η(PL) = 75% in the solid state and maximal exciton utilization efficiency up to 48% (especially, the internal quantum efficiency of η(IQE) = 35% substantially exceed 25% of spin statistics limit) in OLED. The nondoped OLED of CzP-BZP exhibited an excellent performance: a green emission with a CIE coordinate of (0.34, 0.60), a maximum current efficiency of 23.99 cd A(-1), and a maximum external quantum efficiency (EQE, η(EQE)) of 6.95%. This combined HLCT state and "hot exciton" strategy should be a practical way to design next-generation, low-cost, high-efficiency fluorescent OLED materials.

Metal oxide induced charge transfer doping and band alignment of graphene electrodes for efficient organic light emitting diodes.

PubMed

Meyer, Jens; Kidambi, Piran R; Bayer, Bernhard C; Weijtens, Christ; Kuhn, Anton; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Robertson, John; Hofmann, Stephan

2014-06-20

The interface structure of graphene with thermally evaporated metal oxide layers, in particular molybdenum trioxide (MoO3), is studied combining photoemission spectroscopy, sheet resistance measurements and organic light emitting diode (OLED) characterization. Thin (<5 nm) MoO3 layers give rise to an 1.9 eV large interface dipole and a downwards bending of the MoO3 conduction band towards the Fermi level of graphene, leading to a near ideal alignment of the transport levels. The surface charge transfer manifests itself also as strong and stable p-type doping of the graphene layers, with the Fermi level downshifted by 0.25 eV and sheet resistance values consistently below 50 Ω/sq for few-layer graphene films. The combination of stable doping and highly efficient charge extraction/injection allows the demonstration of simplified graphene-based OLED device stacks with efficiencies exceeding those of standard ITO reference devices.

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Min; Xiao, Teng; Liu, Rui

2011-10-11

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDsmore » with strongly improved device performance.« less

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

PubMed

Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

2011-05-11

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia

2015-12-21

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increasemore » of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.« less

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Amine-Based Passivating Materials for Enhanced Optical Properties and Performance of Organic-Inorganic Perovskites in Light-Emitting Diodes.

PubMed

Lee, Seungjin; Park, Jong Hyun; Lee, Bo Ram; Jung, Eui Dae; Yu, Jae Choul; Di Nuzzo, Daniele; Friend, Richard H; Song, Myoung Hoon

2017-04-20

The use of hybrid organic-inorganic perovskites in optoelectronic applications are attracting an interest because of their outstanding characteristics, which enable a remarkable enhancement of device efficiency. However, solution-processed perovskite crystals unavoidably contain defect sites that cause hysteresis in perovskite solar cells (PeSCs) and blinking in perovskite light-emitting diodes (PeLEDs). Here, we report significant beneficial effects using a new treatment based on amine-based passivating materials (APMs) to passivate the defect sites of methylammonium lead tribromide (MAPbBr 3 ) through coordinate bonding between the nitrogen atoms and undercoordinated lead ions. This treatment greatly enhanced the PeLED's efficiency, with an external quantum efficiency (EQE) of 6.2%, enhanced photoluminescence (PL), a lower threshold for amplified spontaneous emission (ASE), a longer PL lifetime, and enhanced device stability. Using confocal microscopy, we observed the cessation of PL blinking in perovskite films treated with ethylenediamine (EDA) due to passivation of the defect sites in the MAPbBr 3 .

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Electron-irradiated n+-Si as hole injection tunable anode of organic light-emitting diode

NASA Astrophysics Data System (ADS)

Li, Y. Z.; Wang, Z. L.; Wang, Y. Z.; Luo, H.; Xu, W. J.; Ran, G. Z.; Qin, G. G.

2013-01-01

Traditionally, n-type silicon is not regarded as a good anode of organic light emitting diode (OLED) due to the extremely low hole concentration in it; however, when doped with Au element which acts as carrier generation centers, it can be, as shown in our previous work. In this study, we demonstrate a new kind of carrier generation centers in n+-type silicon, which are the defects produced by 5 MeV electron irradiation. The density of carrier generation centers in the irradiated n+-Si anode can be controlled by tuning the electron irradiation time, and thus hole injection current in the OLEDs with the irradiated n+-Si anode can be optimized, leading to their much higher maximum efficiencies than those of the OLEDs with non-irradiated n+-Si anode. For a green phosphorescent OLED with the irradiated n+-Si anode, the current efficiency and power efficiency reach up to 12.1 cd/A and 4.2 lm/W, respectively.

Injection and detection of a spin-polarized current in a light-emitting diode

NASA Astrophysics Data System (ADS)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

NASA Astrophysics Data System (ADS)

Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

2016-08-01

A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

Printable candlelight-style organic light-emitting diode

NASA Astrophysics Data System (ADS)

Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

2017-06-01

Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

PubMed Central

Jiang, Shengxiang; Feng, Yulong; Chen, Zhizhong; Zhang, Lisheng; Jiang, Xianzhe; Jiao, Qianqian; Li, Junze; Chen, Yifan; Li, Dongsan; Liu, Lijian; Yu, Tongjun; Shen, Bo; Zhang, Guoyi

2016-01-01

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device. PMID:26902178

Bright luminescence from pure DNA-curcumin-based phosphors for bio hybrid light-emitting diodes

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Park, Chinho

2016-08-01

Recently, significant advances have occurred in the development of phosphors for bio hybrid light-emitting diodes (Bio-HLEDs), which have created brighter, metal-free, rare-earth phosphor-free, eco-friendly, and cost-competitive features for visible light emission. Here, we demonstrate an original approach using bioinspired phosphors in Bio-HLEDs based on natural deoxyribonucleic acid (DNA)-curcumin complexes with cetyltrimethylammonium (CTMA) in bio-crystalline form. The curcumin chromophore was bound to the DNA double helix structure as observed using field emission tunnelling electron microscopy (FE-TEM). Efficient luminescence occurred due to tightly bound curcumin chromophore to DNA duplex. Bio-HLED shows low luminous drop rate of 0.0551 s-1. Moreover, the solid bio-crystals confined the activating bright luminescence with a quantum yield of 62%, thereby overcoming aggregation-induced quenching effect. The results of this study herald the development of commercially viable large-scale hybrid light applications that are environmentally benign.

Red carbon dots-based phosphors for white light-emitting diodes with color rendering index of 92.

PubMed

Zhai, Yuechen; Wang, Yi; Li, Di; Zhou, Ding; Jing, Pengtao; Shen, Dezhen; Qu, Songnan

2018-05-29

Exploration of solid-state efficient red emissive carbon dots (CDs) phosphors is strongly desired for the development of high performance CDs-based white light-emitting diodes (WLEDs). In this work, enhanced red emissive CDs-based phosphors with photoluminescence quantum yields (PLQYs) of 25% were prepared by embedding red emissive CDs (PLQYs of 23%) into polyvinyl pyrrolidone (PVP). Because of the protection of PVP, the phosphors could preserve strong luminescence under long-term UV excitation or being mixed with conventional packaging materials. By applying the red emissive phosphors as the color conversion layer, WLEDs with high color rendering index of 92 and color coordinate of (0.33, 0.33) are fabricated. Copyright © 2018 Elsevier Inc. All rights reserved.

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

DOE PAGES

Dai, Qi; Shan, Qifeng; Wang, Jing; ...

2010-09-30

In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn 2+Cn 3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10 -29 cm 6 s -1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

2018-01-01

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10-5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Wang, Xue; Fündling, Sönke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Jönen, Holger; Hangleiter, Andreas

2012-07-01

Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum wells (MQWs) show different dimensions and morphology. Cathodoluminescence (CL) measurements reveal a MQWs emission centered at about 415 nm on sidewalls and another emission at 460 nm from top surfaces. CL line scans on cleaved rod also indicate the core-shell morphology. Finally, an internal quantum efficiency of about 28% at room temperature was determined by an all-optical method on a LED array.

Fully Printed Halide Perovskite Light-Emitting Diodes with Silver Nanowire Electrodes.

PubMed

Bade, Sri Ganesh R; Li, Junqiang; Shan, Xin; Ling, Yichuan; Tian, Yu; Dilbeck, Tristan; Besara, Tiglet; Geske, Thomas; Gao, Hanwei; Ma, Biwu; Hanson, Kenneth; Siegrist, Theo; Xu, Chengying; Yu, Zhibin

2016-02-23

Printed organometal halide perovskite light-emitting diodes (LEDs) are reported that have indium tin oxide (ITO) or carbon nanotubes (CNTs) as the transparent anode, a printed composite film consisting of methylammonium lead tribromide (Br-Pero) and poly(ethylene oxide) (PEO) as the emissive layer, and printed silver nanowires as the cathode. The fabrication can be carried out in ambient air without humidity control. The devices on ITO/glass have a low turn-on voltage of 2.6 V, a maximum luminance intensity of 21014 cd m(-2), and a maximum external quantum efficiency (EQE) of 1.1%, surpassing previous reported perovskite LEDs. The devices on CNTs/polymer were able to be strained to 5 mm radius of curvature without affecting device properties.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Polymer as an Additive in the Emitting Layer for High-Performance Quantum Dot Light-Emitting Diodes.

PubMed

Liang, Feng; Liu, Yuan; Hu, Yun; Shi, Ying-Li; Liu, Yu-Qiang; Wang, Zhao-Kui; Wang, Xue-Dong; Sun, Bao-Quan; Liao, Liang-Sheng

2017-06-14

A facile but effective method is proposed to improve the performance of quantum dot light-emitting diodes (QLEDs) by incorporating a polymer, poly(9-vinlycarbazole) (PVK), as an additive into the CdSe/CdS/ZnS quantum dot (QD) emitting layer (EML). It is found that the charge balance of the device with the PVK-added EML was greatly improved. In addition, the film morphology of the hole-transporting layer (HTL) which is adjacent to the EML, is substantially improved. The surface roughness of the HTL is reduced from 5.87 to 1.38 nm, which promises a good contact between the HTL and the EML, resulting in low leakage current. With the improved charge balance and morphology, a maximum external quantum efficiency (EQE) of 16.8% corresponding to the current efficiency of 19.0 cd/A is achievable in the red QLEDs. The EQE is 1.6 times as high as that (10.5%) of the reference QLED, comprising a pure QD EML. This work demonstrates that incorporating some polymer molecules into the QD EML as additives could be a facile route toward high-performance QLEDs.

Anthracene-Based Organic Small-Molecule Electron-Injecting Material for Inverted Organic Light-Emitting Diodes.

PubMed

Matsuo, Yutaka; Okada, Hiroshi; Kondo, Yasuhiro; Jeon, Il; Wang, Huan; Yu, Yun; Matsushita, Takeshi; Yanai, Motoki; Ikuta, Toshiaki

2018-04-11

A diphenylanthracene dimethylamine derivative (9-{3,5-di( N, N-dimethylaminoethoxy)phenyl}-10-phenyl-anthracene, DPAMA) was synthesized by the Suzuki-Miyaura cross-coupling reaction. Its ammonium salt, 9-{3,5-di(trimethylammonium ethoxy)phenyl}-10-phenyl-anthracene dichloride (DPAMA-Cl), was also synthesized as a reference material. DPAMA was characterized by UV-vis and fluorescence spectroscopy, cyclic voltammetry, photoelectron yield spectroscopy, and X-ray photoelectron spectroscopy to evaluate the work function-modifying ability of DPAMA on indium tin oxide (ITO) and ZnO. The work functions of ITO and ZnO changed from 4.4 and 4.0 eV (pristine) to 3.8 and 3.9 eV, respectively. Using this surface modification effect of DPAMA, inverted organic light-emitting diodes were fabricated with device structures of ITO/DPAMA/Alq 3 /NPD/MoO 3 /Al (Alq 3 = tris(8-hydroxyquinolinato)aluminum; NPD = N, N'-di-[(1-naphthyl)- N, N'-diphenyl]-1,1'-(biphenyl)-4,4'-diamine) and ITO/ZnO/DPAMA/Alq 3 /NPD/MoO 3 /Al. Both devices showed good performance at the range of current density, 1-300 mA/cm 2 . The best inverted organic light-emitting diodes device showed luminance of 7720 cd/m 2 , current efficiency of 4.51 cd/A, and external quantum efficiency of 1.45%. Also, poly(3-hexylthiophene):mixed phenyl-C 61 and C 71 butyric acid methyl ester-based organic solar cells using DPAMA and DPAMA-Cl as electron-transporting materials showed power conversion efficiencies of 3.3 and 3.4%, respectively.

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

ERIC Educational Resources Information Center

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

76 FR 43722 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-21

... Certain Light- Emitting Diodes and Products Containing Same, DN 2831; the Commission is soliciting... United States after importation of certain light-emitting diodes and products containing same. The...

76 FR 46323 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-02

... Certain Light- Emitting Diodes and Products Containing Same, DN 2837; the Commission is soliciting... the United States after importation of certain light-emitting diodes and products containing same. The...

76 FR 33780 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-09

... Certain Light- Emitting Diodes and Products Containing the Same, DN 2812; the Commission is soliciting... light- emitting diodes and products containing the same. The complaint names as respondents LG...

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

PubMed

Tawfik, Wael Z; Lee, June Key

2018-03-01

The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

Usability of light-emitting diodes in precision approach path indicator systems by individuals with marginal color vision.

DOT National Transportation Integrated Search

2014-05-01

To save energy, the FAA is planning to convert from incandescent lights to light-emitting diodes (LEDs) in : precision approach path indicator (PAPI) systems. Preliminary work on the usability of LEDs by color vision-waivered pilots (Bullough, Skinne...

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2018-01-01

Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

Effects of current crowding on light extraction efficiency of conventional GaN-based light-emitting diodes.

PubMed

Cao, Bin; Li, Shuiming; Hu, Run; Zhou, Shengjun; Sun, Yi; Gan, Zhiying; Liu, Sheng

2013-10-21

Current crowding effects (CCEs) on light extraction efficiency (LEE) of conventional GaN-based light-emitting diodes (LEDs) are analyzed through Monte Carlo ray-tracing simulation. The non-uniform radiative power distribution of the active layer of the Monte Carlo model is obtained based on the current spreading theory and rate equation. The simulation results illustrate that CCE around n-pad (n-CCE) has little effect on LEE, while CCE around p-pad (p-CCE) results in a notable LEE droop due to the significant absorption of photons emitted under p-pad. LEE droop is alleviated by a SiO₂ current blocking layer (CBL) and reflective p-pad. Compared to the conventional LEDs without CBL, the simulated LEE of LEDs with CBL at 20 A/cm² and 70 A/cm² is enhanced by 7.7% and 19.0%, respectively. It is further enhanced by 7.6% and 11.4% after employing a reflective p-pad due to decreased absorption. These enhancements are in accordance with the experimental results. Output power of LEDs with CBL is enhanced by 8.7% and 18.2% at 20 A/cm² and 70 A/cm², respectively. And the reflective p-pad results in a further enhancement of 8.9% and 12.7%.

Measurement of the water content in oil and oil products using IR light-emitting diode-photodiode optrons

NASA Astrophysics Data System (ADS)

Bogdanovich, M. V.; Kabanau, D. M.; Lebiadok, Y. V.; Shpak, P. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Shchemelev, M. A.; Andreev, I. A.; Kunitsyna, E. V.; Ivanov, E. V.; Yakovlev, Yu. P.

2017-02-01

The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, kerosene, diesel fuel) has been demonstrated. It has been found that the measurement error can be lowered if (i) the temperature of the light-emitting diode is maintained accurate to 0.5-1.0°C, (ii) by using a cell through which a permanently stirred analyte is pumped, and (iii) by selecting the repetition rate of radiation pulses from the light-emitting diodes according to the averaging time. A meter of water content in oil and oil products has been developed that is built around IR light-emitting device-photodiode optrons. This device provides water content on-line monitoring accurate to 1.5%.

Efficient hybrid white organic light-emitting diodes for application of triplet harvesting with simple structure

NASA Astrophysics Data System (ADS)

Hwang, Kyo Min; Lee, Song Eun; Lee, Sungkyu; Yoo, Han Kyu; Baek, Hyun Jung; Kim, Young Kwan; Kim, Jwajin; Yoon, Seung Soo

2016-08-01

In this study, we fabricated hybrid white organic light-emitting diodes (WOLEDs) based on triplet harvesting with a simple structure. All the hole transporting material and host in the emitting layer (EML) of devices utilized the same material N,N'-di-1-naphthalenyl-N,N'-diphenyl [1,1':4',1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD), which is known to be blue fluorescent material. Simple hybrid WOLEDs were fabricated with blue fluorescent, green and red phosphorescent materials. We investigated the effect of triplet harvesting (TH) by an exciton generation zone on simple hybrid WOLEDs. The simple hybrid WOLEDs characteristically had a dominant hole mobility, so an exciton generation zone was expected in the EML. Additionally, the optimal the thickness of the hole transporting layer and electron transporting layer was fabricated a simple hybrid WOLEDs. The simple hybrid WOLED exhibits a maximum luminous efficiency of 29.3 cd/A and a maximum external quantum efficiency of 11.2%. The Commission Internationale de l'Éclairage (International Commission on Illumination) coordinates were (0.45, 0.43) at about 10,000 cd/m2.

Study on luminescence characteristics of blue OLED with phosphor-doped host-guest structure

NASA Astrophysics Data System (ADS)

Wang, Zhen; Liu, Fei; Zheng, Xin; Chen, Ai; Xie, Jia-feng; Zhang, Wen-xia

2018-05-01

In this study, we design and fabricate phosphor-doped host-guest structure organic light-emitting diodes (OLEDs), where the blue-ray iridium complex electrophosphorescent material FIrpic acts as object material. Properties of the device can be accommodated by changing the host materials, dopant concentration and thickness of the light-emitting layer. The study shows that the host material N,N'-dicarbazolyl-3,5-benzene (mCP) has a higher triplet excited state energy level, which can effectively prevent FIrpic triplet excited state energy backtracking to host material, thus the luminous efficiency is improved. When mCP is selected as the host material, the thickness of the light-emitting layer is 30 nm and the dopant concentration is 8 wt%, the excitons can be effectively confined in the light-emitting region. As a result, the maximum current efficiency and the maximum brightness of the blue device can reach 15.5 cd/A and 7 196.3 cd/m2, respectively.

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOEpatents

Li, Ting [Ventura, CA

2011-04-26

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Strategies to Achieve High-Performance White Organic Light-Emitting Diodes

PubMed Central

Zhang, Lirong; Li, Xiang-Long; Luo, Dongxiang; Xiao, Peng; Xiao, Wenping; Song, Yuhong; Ang, Qinshu; Liu, Baiquan

2017-01-01

As one of the most promising technologies for next-generation lighting and displays, white organic light-emitting diodes (WOLEDs) have received enormous worldwide interest due to their outstanding properties, including high efficiency, bright luminance, wide viewing angle, fast switching, lower power consumption, ultralight and ultrathin characteristics, and flexibility. In this invited review, the main parameters which are used to characterize the performance of WOLEDs are introduced. Subsequently, the state-of-the-art strategies to achieve high-performance WOLEDs in recent years are summarized. Specifically, the manipulation of charges and excitons distribution in the four types of WOLEDs (fluorescent WOLEDs, phosphorescent WOLEDs, thermally activated delayed fluorescent WOLEDs, and fluorescent/phosphorescent hybrid WOLEDs) are comprehensively highlighted. Moreover, doping-free WOLEDs are described. Finally, issues and ways to further enhance the performance of WOLEDs are briefly clarified. PMID:29194426

75 FR 1559 - Association of State and Territorial Solid Waste Management Officials; Notice of Receipt of...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-01-12

... recycling, or disposed of as low-level radioactive waste. The petitioner asserts that from the standpoint of... electricity. Efficient Light Emitting Diodes with backup batteries are being used where electricity is...

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

NASA Astrophysics Data System (ADS)

Morawiec, Seweryn; Sarzała, Robert P.; Nakwaski, Włodzimierz

2013-11-01

Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantum-confined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (11 22) crystallographic substrate orientation (inclination angle of 58∘ to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to high-quality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In0.3Ga0.7N/GaN QW LED grown on the semipolar (11 22) substrate has been found as currently the optimal LED structure emitting green radiation.