Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

PubMed

Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-04-15

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

A hole modulator for InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei

2015-02-09

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall holemore » concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.« less

Observation of Internal Photoinduced Electron and Hole Separation in Hybrid Two-Dimentional Perovskite Films.

PubMed

Liu, Junxue; Leng, Jing; Wu, Kaifeng; Zhang, Jun; Jin, Shengye

2017-02-01

Two-dimensional (2D) organolead halide perovskites are promising for various optoelectronic applications. Here we report a unique spontaneous charge (electron/hole) separation property in multilayered (BA) 2 (MA) n-1 Pb n I 3n+1 (BA = CH 3 (CH 2 ) 3 NH 3 + , MA = CH 3 NH 3 + ) 2D perovskite films by studying the charge carrier dynamics using ultrafast transient absorption and photoluminescence spectroscopy. Surprisingly, the 2D perovskite films, although nominally prepared as "n = 4", are found to be mixture of multiple perovskite phases, with n = 2, 3, 4 and ≈ ∞, that naturally align in the order of n along the direction perpendicular to the substrate. Driven by the band alignment between 2D perovskites phases, we observe consecutive photoinduced electron transfer from small-n to large-n phases and hole transfer in the opposite direction on hundreds of picoseconds inside the 2D film of ∼358 nm thickness. This internal charge transfer efficiently separates electrons and holes to the upper and bottom surfaces of the films, which is a unique property beneficial for applications in photovoltaics and other optoelectronics devices.

Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

PubMed

Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

2010-05-01

The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

A new electrode design for ambipolar injection in organic semiconductors.

PubMed

Kanagasekaran, Thangavel; Shimotani, Hidekazu; Shimizu, Ryota; Hitosugi, Taro; Tanigaki, Katsumi

2017-10-17

Organic semiconductors have attracted much attention for low-cost, flexible and human-friendly optoelectronics. However, achieving high electron-injection efficiency is difficult from air-stable electrodes and cannot be equivalent to that of holes. Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. Contact resistance for electron injection from Au/pc-OSC/TTC and hole injection from Ca/pc-OSC/TTC are comparable to those for electron injection from Ca and hole injection from Au, respectively. Furthermore, the highest field-effect mobilities of holes (22 cm 2  V -1  s -1 ) and electrons (5.0 cm 2  V -1  s -1 ) are observed in rubrene among field-effect transistors with electrodes so far proposed by employing Ca/pc-OSC/TTC and Au/pc-OSC/TTC electrodes for electron and hole injection, respectively.One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

NASA Astrophysics Data System (ADS)

Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

2012-01-01

Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

NASA Astrophysics Data System (ADS)

Mahpeykar, Seyed Milad; Wang, Xihua

2017-02-01

Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

Harvesting multiple electron-hole pairs generated through plasmonic excitation of Au nanoparticles.

PubMed

Kim, Youngsoo; Smith, Jeremy G; Jain, Prashant K

2018-05-07

Multi-electron redox reactions, although central to artificial photosynthesis, are kinetically sluggish. Amidst the search for synthetic catalysts for such processes, plasmonic nanoparticles have been found to catalyse multi-electron reduction of CO 2 under visible light. This example motivates the need for a general, insight-driven framework for plasmonic catalysis of such multi-electron chemistry. Here, we elucidate the principles underlying the extraction of multiple redox equivalents from a plasmonic photocatalyst. We measure the kinetics of electron harvesting from a gold nanoparticle photocatalyst as a function of photon flux. Our measurements, supported by theoretical modelling, reveal a regime where two-electron transfer from the excited gold nanoparticle becomes prevalent. Multiple electron harvesting becomes possible under continuous-wave, visible-light excitation of moderate intensity due to strong interband transitions in gold and electron-hole separation accomplished using a hole scavenger. These insights will help expand the utility of plasmonic photocatalysis beyond CO 2 reduction to other challenging multi-electron, multi-proton transformations such as N 2 fixation.

Exciton generation/dissociation/charge-transfer enhancement in inorganic/organic hybrid solar cells by robust single nanocrystalline LnPxOy (Ln = Eu, Y) doping.

PubMed

Jin, Xiao; Sun, Weifu; Chen, Zihan; Wei, Taihuei; Chen, Chuyang; He, Xingdao; Yuan, Yongbiao; Li, Yue; Li, Qinghua

2014-06-11

Low-temperature solution-processed photovoltaics suffer from low efficiencies because of poor exciton or electron-hole transfer. Inorganic/organic hybrid solar cell, although still in its infancy, has attracted great interest thus far. One of the promising ways to enhance exciton dissociation or electron-hole transport is the doping of lanthanide phosphate ions. However, the underlying photophysical mechanism remains poorly understood. Herein, by applying femtosecond transient absorption spectroscopy, we successfully distinguished hot electron, less energetic electron, hole transport from electron-hole recombination. Concrete evidence has been provided that lanthanide phosphate doping improves the efficiency of both hot electron and "less energetic" electron transfers from donor to acceptor, but the hole transport almost remains unchanged. In particular, the hot electron transfer lifetime was shortened from 30.2 to 12.7 ps, that is, more than 60% faster than pure TiO2 acceptor. Such improvement was ascribed to the facts that the conduction band (CB) edge energy level of TiO2 has been elevated by 0.2 eV, while the valence band level almost remains unchanged, thus not only narrowing the energy offset between CB levels of TiO2 and P3HT, but also meanwhile enlarging the band gap of TiO2 itself that permits one to inhibit electron-hole recombination within TiO2. Consequently, lanthanide phosphate doped TiO2/P3HT bulk-heterojunction solar cell has been demonstrated to be a promising hybrid solar cell, and a notable power conversion efficiency of 2.91% is therefore attained. This work indicates that lanthanide compound ions can efficiently facilitate exciton generation, dissociation, and charge transport, thus enhancing photovoltaic performance.

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Ji, Yun; Liu, Wei

2014-02-17

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

Exciton multiplication from first principles.

PubMed

Jaeger, Heather M; Hyeon-Deuk, Kim; Prezhdo, Oleg V

2013-06-18

Third-generation photovolatics require demanding cost and power conversion efficiency standards, which may be achieved through efficient exciton multiplication. Therefore, generating more than one electron-hole pair from the absorption of a single photon has vast ramifications on solar power conversion technology. Unlike their bulk counterparts, irradiated semiconductor quantum dots exhibit efficient exciton multiplication, due to confinement-enhanced Coulomb interactions and slower nonradiative losses. The exact characterization of the complicated photoexcited processes within quantum-dot photovoltaics is a work in progress. In this Account, we focus on the photophysics of nanocrystals and investigate three constituent processes of exciton multiplication, including photoexcitation, phonon-induced dephasing, and impact ionization. We quantify the role of each process in exciton multiplication through ab initio computation and analysis of many-electron wave functions. The probability of observing a multiple exciton in a photoexcited state is proportional to the magnitude of electron correlation, where correlated electrons can be simultaneously promoted across the band gap. Energies of multiple excitons are determined directly from the excited state wave functions, defining the threshold for multiple exciton generation. This threshold is strongly perturbed in the presence of surface defects, dopants, and ionization. Within a few femtoseconds following photoexcitation, the quantum state loses coherence through interactions with the vibrating atomic lattice. The phase relationship between single excitons and multiple excitons dissipates first, followed by multiple exciton fission. Single excitons are coupled to multiple excitons through Coulomb and electron-phonon interactions, and as a consequence, single excitons convert to multiple excitons and vice versa. Here, exciton multiplication depends on the initial energy and coupling magnitude and competes with electron-phonon energy relaxation. Multiple excitons are generated through impact ionization within picoseconds. The basis of exciton multiplication in quantum dots is the collective result of photoexcitation, dephasing, and nonadiabatic evolution. Each process is characterized by a distinct time-scale, and the overall multiple exciton generation dynamics is complete by about 10 ps. Without relying on semiempirical parameters, we computed quantum mechanical probabilities of multiple excitons for small model systems. Because exciton correlations and coherences are microscopic, quantum properties, results for small model systems can be extrapolated to larger, realistic quantum dots.

Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs

NASA Astrophysics Data System (ADS)

Niu, Quan; Blom, Paul W. M.; May, Falk; Heimel, Paul; Zhang, Minlu; Eickhoff, Christian; Heinemeyer, Ute; Lennartz, Christian; Crǎciun, N. Irina

2017-11-01

In state-of-the-art blue phosphorescent organic light-emitting diode (PHOLED) device architectures, electrons and holes are injected into the emissive layer, where they are carried by the emitting and hole transporting units, respectively. Using transient electroluminescence measurements, we disentangle the contribution of the electrons and holes on the transport and efficiency of both pristine and degraded PHOLEDs. By varying the concentration of hole transporting units, we show that for pristine PHOLEDs, the transport is electron dominated. Furthermore, degradation of the PHOLEDs upon electrical aging is not related to the hole transport but is governed by a decrease in the electron transport due to the formation of electron traps.

High-Efficiency Nonfullerene Polymer Solar Cell Enabling by Integration of Film-Morphology Optimization, Donor Selection, and Interfacial Engineering.

PubMed

Zhang, Xin; Li, Weiping; Yao, Jiannian; Zhan, Chuanlang

2016-06-22

Carrier mobility is a vital factor determining the electrical performance of organic solar cells. In this paper we report that a high-efficiency nonfullerene organic solar cell (NF-OSC) with a power conversion efficiency of 6.94 ± 0.27% was obtained by optimizing the hole and electron transportations via following judicious selection of polymer donor and engineering of film-morphology and cathode interlayers: (1) a combination of solvent annealing and solvent vapor annealing optimizes the film morphology and hence both hole and electron mobilities, leading to a trade-off of fill factor and short-circuit current density (Jsc); (2) the judicious selection of polymer donor affords a higher hole and electron mobility, giving a higher Jsc; and (3) engineering the cathode interlayer affords a higher electron mobility, which leads to a significant increase in electrical current generation and ultimately the power conversion efficiency (PCE).

Covariance mapping of two-photon double core hole states in C 2 H 2 and C 2 H 6 produced by an x-ray free electron laser

DOE PAGES

Mucke, M; Zhaunerchyk, V; Frasinski, L J; ...

2015-07-01

Few-photon ionization and relaxation processes in acetylene (C 2H 2) and ethane (C 2H 6) were investigated at the linac coherent light source x-ray free electron laser (FEL) at SLAC, Stanford using a highly efficient multi-particle correlation spectroscopy technique based on a magnetic bottle. The analysis method of covariance mapping has been applied and enhanced, allowing us to identify electron pairs associated with double core hole (DCH) production and competing multiple ionization processes including Auger decay sequences. The experimental technique and the analysis procedure are discussed in the light of earlier investigations of DCH studies carried out at the samemore » FEL and at third generation synchrotron radiation sources. In particular, we demonstrate the capability of the covariance mapping technique to disentangle the formation of molecular DCH states which is barely feasible with conventional electron spectroscopy methods.« less

Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

NASA Astrophysics Data System (ADS)

Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

2016-05-01

Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

High-Efficiency Photovoltaic Energy Conversion using Surface Acoustic Waves in Piezoelectric Semiconductors

NASA Astrophysics Data System (ADS)

Yakovenko, Victor

2010-03-01

We propose a radically new design for photovoltaic energy conversion using surface acoustic waves (SAWs) in piezoelectric semiconductors. The periodically modulated electric field from SAW spatially separates photogenerated electrons and holes to the maxima and minima of SAW, thus preventing their recombination. The segregated electrons and holes are transported by the moving SAW to the collecting electrodes of two types, which produce dc electric output. Recent experiments [1] using SAWs in GaAs have demonstrated the photon to current conversion efficiency of 85%. These experiments were designed for photon counting, but we propose to adapt these techniques for highly efficient photovoltaic energy conversion. The advantages are that the electron-hole segregation takes place in the whole volume where SAW is present, and the electrons and holes are transported in the organized, collective manner at high speed, as opposed to random diffusion in conventional devices.[4pt] [1] S. J. Jiao, P. D. Batista, K. Biermann, R. Hey, and P. V. Santos, J. Appl. Phys. 106, 053708 (2009).

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

NASA Astrophysics Data System (ADS)

Mosberg, A. B.; Myklebost, S.; Ren, D.; Weman, H.; Fimland, B. O.; van Helvoort, A. T. J.

2017-09-01

To efficiently evaluate the novel approach of focused ion beam (FIB) direct patterning of substrates for nanowire growth, a reference matrix of hole arrays has been used to study the effect of ion fluence and hole diameter on nanowire growth. Self-catalyzed GaAsSb nanowires were grown using molecular beam epitaxy and studied by scanning electron microscopy (SEM). To ensure an objective analysis, SEM images were analyzed with computer vision to automatically identify nanowires and characterize each array. It is shown that FIB milling parameters can be used to control the nanowire growth. Lower ion fluence and smaller diameter holes result in a higher yield (up to 83%) of single vertical nanowires, while higher fluence and hole diameter exhibit a regime of multiple nanowires. The catalyst size distribution and placement uniformity of vertical nanowires is best for low-value parameter combinations, indicating how to improve the FIB parameters for positioned-controlled nanowire growth.

Disentangling formation of multiple-core holes in aminophenol molecules exposed to bright X-FEL radiation

NASA Astrophysics Data System (ADS)

Zhaunerchyk, V.; Kamińska, M.; Mucke, M.; Squibb, R. J.; Eland, J. H. D.; Piancastelli, M. N.; Frasinski, L. J.; Grilj, J.; Koch, M.; McFarland, B. K.; Sistrunk, E.; Gühr, M.; Coffee, R. N.; Bostedt, C.; Bozek, J. D.; Salén, P.; Meulen, P. v. d.; Linusson, P.; Thomas, R. D.; Larsson, M.; Foucar, L.; Ullrich, J.; Motomura, K.; Mondal, S.; Ueda, K.; Richter, R.; Prince, K. C.; Takahashi, O.; Osipov, T.; Fang, L.; Murphy, B. F.; Berrah, N.; Feifel, R.

2015-12-01

Competing multi-photon ionization processes, some leading to the formation of double core hole states, have been examined in 4-aminophenol. The experiments used the linac coherent light source (LCLS) x-ray free electron laser, in combination with a time-of-flight magnetic bottle electron spectrometer and the correlation analysis method of covariance mapping. The results imply that 4-aminophenol molecules exposed to the focused x-ray pulses of the LCLS sequentially absorb more than two x-ray photons, resulting in the formation of multiple core holes as well as in the sequential removal of photoelectrons and Auger electrons (so-called PAPA sequences).

Disentangling formation of multiple-core holes in aminophenol molecules exposed to bright X-FEL radiation

DOE PAGES

Zhaunerchyk, V.; Kaminska, M.; Mucke, M.; ...

2015-10-28

Competing multi-photon ionization processes, some leading to the formation of double core hole states, have been examined in 4-aminophenol. The experiments used the linac coherent light source (LCLS) x-ray free electron laser, in combination with a time-of-flight magnetic bottle electron spectrometer and the correlation analysis method of covariance mapping. Furthermore, the results imply that 4-aminophenol molecules exposed to the focused x-ray pulses of the LCLS sequentially absorb more than two x-ray photons, resulting in the formation of multiple core holes as well as in the sequential removal of photoelectrons and Auger electrons (so-called PAPA sequences).

Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.

PubMed

Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex

2008-10-01

Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which is proportional to the ratio between the biexciton density of states rhoXX and the single-exciton density of states rhoX, restricted to single-exciton and biexciton states that are coupled by Coulomb interactions. Using R2(E), we consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, and PbSe nanocrystals of different sizes. Although DCM can be affected by both quantum-confinement effects (reflecting the underly electronic structure of the confined dot-interior states) and surface effects, here we are interested to isolate the former. To this end the nanocrystal energy levels are obtained from the corresponding bulk band structure via the truncated crystal approximation. We find that PbSe, Si, GaAs, CdSe, and InP nanocrystals have larger DCM figure of merit than the other nanocrystals. Our calculations suggest that high DCM efficiency requires high degeneracy of the corresponding bulk band-edge states. Interestingly, by considering band structure effects we find that as the dot size increases the DCM critical energy E0 (the energy at which R2(E) becomes >or=1) is reduced, suggesting improved DCM. However, whether the normalized E0/epsilong increases or decreases as the dot size increases depends on dot material.

Multiple core-hole formation by free-electron laser radiation in molecular nitrogen

NASA Astrophysics Data System (ADS)

Banks, H. I. B.; Little, D. A.; Emmanouilidou, A.

2018-05-01

We investigate the formation of multiple-core-hole states of molecular nitrogen interacting with a free-electron laser pulse. In previous work, we obtained bound and continuum molecular orbitals in the single-center expansion scheme and used these orbitals to calculate photo-ionization and auger decay rates. We extend our formulation to track the proportion of the population that accesses single-site versus two-site double-core-hole (TSDCH) states, before the formation of the final atomic ions. We investigate the pulse parameters that favor the formation of the single-site and TSDCH as well as triple-core-hole states for 525 and 1100 eV photons.

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

NASA Astrophysics Data System (ADS)

Lin, Qianglu

Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum confinement features. The reaction can be explained by a soft-template assisted process, in which the lamellar lead-thiolate precursor transforms into rod-shape micelle in the existence of telluride anions by electrostatic attraction. Fine tuning the reaction condition by changing the solvent to oleylamine, lead telluride nanowires with length up to 200 nm can be prepared, which bundled together because of the strong dipole-dipole attraction between nanowires. Decreasing the amount of surfactant dodecanethiol in the synthesis produces lead telluride nanorings, which formed by attaching four small particles together, leaving the center void. To prepare two-dimensional nanoplatelets, mixture ligands containing two amines with different carbon chain length were used, which initiate oriented attachment of the nanoparticles to form square-shape nanoplatelets. By further adopting stronger binding ligands such as phosphonic acid, PbTe nanoplatelets with micrometer lateral dimension were prepared with extremely sharp near infrared photoluminescence (less than 40 meV), which has never be achieved in quantum dots and other nanostructures.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE PAGES

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.; ...

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium.

PubMed

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J; Kraus, Peter M; Cushing, Scott K; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20  cm -3 . Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.; Kraus, Peter M.; Cushing, Scott K.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. PMID:28569752

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Efficiency analysis of betavoltaic elements

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Shkrebtii, A. I.; Korkishko, R. M.; Kostylyov, V. P.; Kulish, M. R.; Sokolovskyi, I. O.

2015-09-01

The conversion of energy of electrons produced by a radioactive β-source into electricity in a Si and SiC p- n junctions is modeled. The features of the generation function that describes the electron-hole pair production by an electron flux and the emergence of a "dead layer" are discussed. The collection efficiency Q that describes the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the dead layer. It is shown that in the case of high-grade Si p- n junctions, the collection efficiency of electron-hole pairs created by a high-energy electrons flux (such as, e.g., Pm-147 beta flux) is close or equal to unity in a wide range of electron energies. For SiC p-n junctions, Q is near unity only for electrons with relatively low energies of about 5 keV (produced, e.g., by a tritium source) and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the dead layer on the collection efficiency is negligible, are determined. The open-circuit voltage is calculated for realistic values of the minority carriers' diffusion coefficients and lifetimes in Si and SiC p- n junctions, irradiated by a high-energy electrons flux. Our calculations allow to estimate the attainable efficiency of betavoltaic elements.

Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

PubMed Central

Lee, Young Keun; Choi, Hongkyw; Lee, Hyunsoo; Lee, Changhwan; Choi, Jin Sik; Choi, Choon-Gi; Hwang, Euyheon; Park, Jeong Young

2016-01-01

Carrier multiplication (i.e. generation of multiple electron–hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler’s law for photoemission on metals. The Fowler’s law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity—both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting. PMID:27271245

Theoretical insights into the effect of a conjugated core on the hole transport properties of hole-transporting materials for perovskite solar cells.

PubMed

Zhang, Zemin; Hu, Weixia; Cui, Jianyu; He, Rongxing; Shen, Wei; Li, Ming

2017-09-20

Conjugated bifluorenylidene and naphthalene central cores are introduced into hole-transporting materials DT1 and DT2 to replace the spiro-core of the reported, highly efficient FDT. The effects of the conjugated core on the geometrics, electronic properties and hole transport properties are investigated by using density functional theory coupled with Marcus theory and the Einstein relation. The calculated results show that DT1 (-5.21 eV) and DT2 (-5.23 eV) have lower HOMO levels than FDT (-5.15 eV), which indicates that the perovskite solar cells with conjugated hole-transporting materials can have higher open-circuit voltages. The introduction of the conjugated core is beneficial to the more efficient face-to-face packing pattern of the dimer, resulting in a larger intermolecular electronic coupling. Importantly, it is found that DT1 (1.6 × 10 -3 cm 2 V -1 s -1 ) and DT2 (2.7 × 10 -2 cm 2 V -1 s -1 ) exhibit relatively higher hole mobilities than FDT (1.3 × 10 -4 cm 2 V -1 s -1 ) owing to the larger electronic coupling. Therefore, enhanced hole transport ability can be achieved by switching from the spiro-core to the conjugated core. The present work provides a new strategy to improve the hole transport properties of hole-transporting materials, which will contribute to the development of conjugated small molecules as hole-transporting materials in efficient perovskite solar cells.

Time-Domain Ab Initio Analysis of Excitation Dynamics in a Quantum Dot/Polymer Hybrid: Atomistic Description Rationalizes Experiment.

PubMed

Long, Run; Prezhdo, Oleg V

2015-07-08

Hybrid organic/inorganic polymer/quantum dot (QD) solar cells are an attractive alternative to the traditional cells. The original, simple models postulate that one-dimensional polymers have continuous energy levels, while zero-dimensional QDs exhibit atom-like electronic structure. A realistic, atomistic viewpoint provides an alternative description. Electronic states in polymers are molecule-like: finite in size and discrete in energy. QDs are composed of many atoms and have high, bulk-like densities of states. We employ ab initio time-domain simulation to model the experimentally observed ultrafast photoinduced dynamics in a QD/polymer hybrid and show that an atomistic description is essential for understanding the time-resolved experimental data. Both electron and hole transfers across the interface exhibit subpicosecond time scales. The interfacial processes are fast due to strong electronic donor-acceptor, as evidenced by the densities of the photoexcited states which are delocalized between the donor and the acceptor. The nonadiabatic charge-phonon coupling is also strong, especially in the polymer, resulting in rapid energy losses. The electron transfer from the polymer is notably faster than the hole transfer from the QD, due to a significantly higher density of acceptor states. The stronger molecule-like electronic and charge-phonon coupling in the polymer rationalizes why the electron-hole recombination inside the polymer is several orders of magnitude faster than in the QD. As a result, experiments exhibit multiple transfer times for the long-lived hole inside the QD, ranging from subpicoseconds to nanoseconds. In contrast, transfer of the short-lived electron inside the polymer does not occur beyond the first picosecond. The energy lost by the hole on its transit into the polymer is accommodated by polymer's high-frequency vibrations. The energy lost by the electron injected into the QD is accommodated primarily by much lower-frequency collective and QD modes. The electron dynamics is exponential, whereas evolution of the injected hole through the low density manifold of states of the polymer is highly nonexponential. The time scale of the electron-hole recombination at the interface is intermediate between those in pristine polymer and QD and is closer to that in the polymer. The detailed atomistic insights into the photoinduced charge and energy dynamics at the polymer/QD interface provide valuable guidelines for optimization of solar light harvesting and photovoltaic efficiency in modern nanoscale materials.

Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

NASA Astrophysics Data System (ADS)

Li, Huashan; Wu, Zhigang; Lusk, Mark

2013-03-01

Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

Microchannel plate for high-efficiency field emission display

NASA Astrophysics Data System (ADS)

Yi, Whikun; Jin, Sunghwan; Jeong, Taewon; Lee, Jeonghee; Yu, SeGi; Choi, Yongsoo; Kim, J. M.

2000-09-01

The efficiency of a field emission display was improved significantly with a newly developed microchannel plate. The key features of this unit and its fabrication are summarized as follows: (a) bulk alumina is used as a substrate material, (b) channel location is defined by a programed-hole puncher, and (c) thin film deposition is conducted by electroless plating followed by a sol-gel process. With the microchannel plate between the cathode and the anode of a field emission display, the brightness of luminescent light increases three- to fourfold by electron multiplication through an array of pores in the device. In addition, the fabricated microchannel plate prevents spreading of electrons emitted from the cathode tips, thus improving both display resolution and picture quality.

Multiple exciton generation for photoelectrochemical hydrogen evolution reactions with quantum yields exceeding 100%

DOE PAGES

Yan, Yong; Crisp, Ryan W.; Gu, Jing; ...

2017-04-03

Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron-hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na 2S solution with a peak external quantum efficiency exceeding 100%. QDmore » photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Finally, our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels.« less

Boosting the efficiency of quantum dot sensitized solar cells through modulation of interfacial charge transfer.

PubMed

Kamat, Prashant V

2012-11-20

The demand for clean energy will require the design of nanostructure-based light-harvesting assemblies for the conversion of solar energy into chemical energy (solar fuels) and electrical energy (solar cells). Semiconductor nanocrystals serve as the building blocks for designing next generation solar cells, and metal chalcogenides (e.g., CdS, CdSe, PbS, and PbSe) are particularly useful for harnessing size-dependent optical and electronic properties in these nanostructures. This Account focuses on photoinduced electron transfer processes in quantum dot sensitized solar cells (QDSCs) and discusses strategies to overcome the limitations of various interfacial electron transfer processes. The heterojunction of two semiconductor nanocrystals with matched band energies (e.g., TiO(2) and CdSe) facilitates charge separation. The rate at which these separated charge carriers are driven toward opposing electrodes is a major factor that dictates the overall photocurrent generation efficiency. The hole transfer at the semiconductor remains a major bottleneck in QDSCs. For example, the rate constant for hole transfer is 2-3 orders of magnitude lower than the electron injection from excited CdSe into oxide (e.g., TiO(2)) semiconductor. Disparity between the electron and hole scavenging rate leads to further accumulation of holes within the CdSe QD and increases the rate of electron-hole recombination. To overcome the losses due to charge recombination processes at the interface, researchers need to accelerate electron and hole transport. The power conversion efficiency for liquid junction and solid state quantum dot solar cells, which is in the range of 5-6%, represents a significant advance toward effective utilization of nanomaterials for solar cells. The design of new semiconductor architectures could address many of the issues related to modulation of various charge transfer steps. With the resolution of those problems, the efficiencies of QDSCs could approach those of dye sensitized solar cells (DSSC) and organic photovoltaics.

Laboratory observation of electron phase-space holes during magnetic reconnection.

PubMed

Fox, W; Porkolab, M; Egedal, J; Katz, N; Le, A

2008-12-19

We report the observation of large-amplitude, nonlinear electrostatic structures, identified as electron phase-space holes, during magnetic reconnection experiments on the Versatile Toroidal Facility at MIT. The holes are positive electric potential spikes, observed on high-bandwidth ( approximately 2 GHz) Langmuir probes. Investigations with multiple probes establish that the holes travel at or above the electron thermal speed and have a three-dimensional, approximately spherical shape, with a scale size approximately 2 mm. This corresponds to a few electron gyroradii, or many tens of Debye lengths, which is large compared to holes considered in simulations and observed by satellites, whose length scale is typically only a few Debye lengths. Finally, a statistical study over many discharges confirms that the holes appear in conjunction with the large inductive electric fields and the creation of energetic electrons associated with the magnetic energy release.

THz radiation from two electron-beams interaction within a bi-grating and a sub-wavelength holes array composite sandwich structure.

PubMed

Zhang, Yaxin; Zhou, Y; Dong, L

2013-09-23

Two electron-beams' interaction in a sandwich structure composed of a bi-grating and a sub-wavelength holes array is suggested to generate THz radiation in this paper. It shows that this system takes advantage of both bi-grating and sub-wavelength holes array structures. The results demonstrate that surface waves on a bi-grating can couple with mimicking surface plasmons of a sub-wavelength holes array so that the wave-coupling is strong and the field intensity is high in this structure. Moreover, compared with the interaction in the bi-grating structure and sub-wavelength holes array structure, respectively, it shows that in this composite system the two electron-beams' interaction is more efficient and the modulation depth and radiation intensity have been enhanced significantly. The modulation depth and efficiency can reach 22% and 4%, respectively, and the starting current density is only 12 A/cm². This radiation system may provide good opportunities for development of multi-electron beam-driven THz radiation sources.

Time Dependent Behavior of Light Emitting Polymers for Potential Individual Identify Friend or Foe (IIFF) Applications

DTIC Science & Technology

2007-12-01

efficiently it combines electrons and holes, so by testing several different LEP types the one device that provides optimum intensity for the longest period...least voltage for turn on can be determined. The goal of this work was to explore the various relationships between driving current, response voltage...and intensity over the multiple timescales of interest (days, hours and seconds). The relationship between short term activations and long term

Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

NASA Astrophysics Data System (ADS)

Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

2017-07-01

We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.

Electron holes in phase space: What they are and why they matter

NASA Astrophysics Data System (ADS)

Hutchinson, I. H.

2017-05-01

This is a tutorial and selective review explaining the fundamental concepts and some currently open questions concerning the plasma phenomenon of the electron hole. The widespread occurrence of electron holes in numerical simulations, space-craft observations, and laboratory experiments is illustrated. The elementary underlying theory is developed of a one-dimensional electron hole as a localized potential maximum, self-consistently sustained by a deficit of trapped electron phase-space density. The spatial extent of a hole is typically a few Debye lengths; what determines the minimum and maximum possible lengths is explained, addressing the key aspects of the as yet unsettled dispute between the integral and differential approaches to hole structure. In multiple dimensions, holes tend to form less readily; they generally require a magnetic field and distribution-function anisotropy. The mechanisms by which they break up are explained, noting that this transverse instability is not fully understood. Examples are given of plasma circumstances where holes play an important role, and of recent progress on understanding their holistic kinematics and self-acceleration.

The effect of the hole injection layer on the performance of single layer organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenjin, Zeng; Ran, Bi; Hongmei, Zhang, E-mail: iamhmzhang@njupt.edu.cn, E-mail: iamwhuang@njupt.edu.cn

2014-12-14

Efficient single-layer organic light-emitting diodes (OLEDs) were reported based on a green fluorescent dye 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7–tetramethyl-1H,5H,11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T). Herein, poly(3,4-ethylenedioxy thiophene) poly(styrene sulfonate) were, respectively, applied as the injection layer for comparison. The hole transport properties of the emission layer with different hole injection materials are well investigated via current-voltage measurement. It was clearly found that the hole injection layers (HILs) play an important role in the adjustment of the electron/hole injection to attain transport balance of charge carriers in the single emission layer of OLEDs with electron-transporting host. The layer of tris-(8-hydroxyquinoline) aluminum played a dual role of hostmore » and electron-transporting materials within the emission layer. Therefore, appropriate selection of hole injection layer is a key factor to achieve high efficiency OLEDs with single emission layer.« less

Morphological and Compositional (S)TEM Analysis of Multiple Exciton Generation Solar Cells

NASA Astrophysics Data System (ADS)

Wisnivesky-Rocca-Rivarola, F.; Davis, N. J. L. K.; Bohm, M.; Ducati, C.

2015-10-01

Quantum confinement of charge carriers in semiconductor nanocrystals produces optical and electronic properties that have the potential to enhance the power conversion efficiency of solar cells. One of these properties is the efficient formation of more than one electron-hole pair from a single absorbed photon, in a process called multiple exciton generation (MEG). In this work we studied the morphology of nanocrystal multilayers of PbSe treated with CdCl2 using complementary imaging and spectroscopy techniques to characterise the chemical composition and morphology of full MEG devices made with PbSe nanorods (NRs). IN the scanning TEM (STEM), plan view images and chemical maps were obtained of the nanocrystal layers, which allowed for the analysis of crystal structure and orientation, as well as size distribution and aspect ratio. These results were complemented by cross-sectional images of full devices, which allowed accessing the structure of each layer that composes the device, including the nanorod packing in the active nanocrystal layer.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

Solar photocatalytic water oxidation over Ag3PO4/g-C3N4 composite materials mediated by metallic Ag and graphene

NASA Astrophysics Data System (ADS)

Cui, Xingkai; Tian, Lin; Xian, Xiaozhai; Tang, Hua; Yang, Xiaofei

2018-02-01

Solar-driven water splitting over semiconductor-based photocatalysts provides direct conversion of solar energy to chemical energy, in which electron-hole separation and charge transport are critical for enhancing the photocatalytic activity of semiconducting materials. Moreover, the search for active photocatalysts that efficiently oxidize water remains a challenging task. Here, we demonstrate that a series of Ag3PO4/Ag/graphene/graphitic carbon nitride (g-C3N4) heterostructured materials can drive photocatalytic water oxidation efficiently under LED illumination. The water oxidation behavior of as-prepared composite photocatalysts in relation to the added amount of g-C3N4 and the roles of electron mediators was investigated in detail. Based on the illuminated Z-scheme photocatalytic mechanism, the photogenerated electrons and holes can be separated effectively and the electron-hole recombination of bulk material is suppressed. The reduced metallic Ag nanoparticles were found to function as the center for the accumulation of electrons from Ag3PO4 and holes from g-C3N4. By exploiting the proper addition of g-C3N4 into the composite, photocatalytic oxygen evolution performance over the heterostructured materials could be suitably tuned, which resulted in highly efficient water oxidation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Robson, A. J.

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply chargedmore » with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.« less

Electron Holes in phase-space: what they are and why they matter

NASA Astrophysics Data System (ADS)

Hutchinson, I. H.

2016-10-01

Plasma electron holes are soliton-like electric potential structures sustained self-consistently by a deficit of phase-space density on trapped orbits. They are a class of Bernstein Green and Kruskal (BGK)-mode phase-space vortices, long studied in basic analytic and computational theory and observed in some experiments. Recently it has become clear from space-craft observations that isolated potential structures with the character of electron holes constitute an important component of space-plasma turbulence. Modern computational simulations of collisionless plasmas also often observe electron holes to form as a nonlinear consequence of kinetic electron instabilities. This tutorial will explain the basic theory of electron hole structure, trace the development of the understanding of electron holes, and survey some of the observational evidence for their significance. It was found early on that unmagnetized multidimensional simulations of electron two-stream instabilities do not show the long lived holes that appear in one dimension. Deliberately-created 1-D slab holes in multiple dimensions experience a transverse instability unless the guiding magnetic field is strong enough. Analysis has yet to identify unequivocally the instability mechanism and threshold; but it can show that spherically symmetric holes in 3-D without magnetic field are essentially impossible. Recent simulations have studied holes' formation, self-acceleration, merging, splitting, and growth. Analytic understanding of many of these phenomena is gained from the kinematics of the hole regarded as a coherent entity, accounting for the plasma momentum changes it induces, and especially the interaction with the ions. Electron holes can travel at up to approximately the electron thermal speed, but not slower (relative to ions) than several times the ion acoustic speed. Some notable current research questions will be described.

Carrier multiplication and charge transport in artificial quantum-dot solids probed by ultrafast photocurrent spectroscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Klimov, Victor I.

2017-05-01

Understanding and controlling carrier transport and recombination dynamics in colloidal quantum dot films is key to their application in electronic and optoelectronic devices. Towards this end, we have conducted transient photocurrent measurements to monitor transport through quantum confined band edge states in lead selenide quantum dots films as a function of pump fluence, temperature, electrical bias, and surface treatment. Room temperature dynamics reveal two distinct timescales of intra-dot geminate processes followed by non-geminate inter-dot processes. The non-geminate kinetics is well described by the recombination of holes with photoinjected and pre-existing electrons residing in mid-gap states. We find the mobility of the quantum-confined states shows no temperature dependence down to 6 K, indicating a tunneling mechanism of early time photoconductance. We present evidence of the importance of the exciton fine structure in controlling the low temperature photoconductance, whereby the nanoscale enhanced exchange interaction between electrons and holes in quantum dots introduces a barrier to charge separation. Finally, side-by-side comparison of photocurrent transients using excitation with low- and high-photon energies (1.5 vs. 3.0 eV) reveals clear signatures of carrier multiplication (CM), that is, generation of multiple excitons by single photons. Based on photocurrent measurements of quantum dot solids and optical measurements of solution based samples, we conclude that the CM efficiency is unaffected by strong inter-dot coupling. Therefore, the results of previous numerous spectroscopic CM studies conducted on dilute quantum dot suspensions should, in principle, be reproducible in electronically coupled QD films used in devices.

Materials and systems for unassisted photoelectrochemical solar fuels production (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lee, Jae Sung

2016-10-01

About 400 semiconductor solids are known to have photocatalytic activity for water splitting. Yet there is no single material that could satisfy all the requirements for desired photocatalysts: i) suitable band gap energy (1.7 eV< Eg < 2.3 eV) for high efficiency, ii) proper band position for reduction and/or oxidation of water, iii) long-term stability in aqueous solutions, iv) low cost, v) high crystallinity, and vi) high conductivity. Hence, in the selection of photocatalytic materials, we better start from intrinsically stable materials made of earth-abundant elements. The band bap energy is also the primary consideration to absorb ample amount of solar energy of wide wavelength spectrum. It sets the limit of theoretically maximum efficiency and it could also be extended by band engineering techniques. Upon selection of the candidate materials, we can also modify the materials for full utilization their potentials. The main path of efficiency loss in PEC water splitting process is recombination of photoelectrons and holes. We discuss the material designs including i) p-n heterojunction photoanodes for effective electron-hole separation, ii) electron highway to facilitate interparticle electron transfer, iii) metal or anion doping to improve conductivity of the semiconductor and to extend the range of light absorption, iv) one-dimensional nanomaterials to secure a short hole diffusion distance and vectoral electron transfer, and v) loading co-catalysts for facile charge separation. High efficiency has been demonstrated for all these examples due to efficient electron-hole separation. Finally, total systems for unassisted solar fuel production are demonstrated.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

PubMed

Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

2017-07-13

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (<1.25 eV) to create valence-band holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation

PubMed Central

Chirayath, V. A.; Callewaert, V.; Fairchild, A. J.; Chrysler, M. D.; Gladen, R. W.; Mcdonald, A. D.; Imam, S. K.; Shastry, K.; Koymen, A. R.; Saniz, R.; Barbiellini, B.; Rajeshwar, K.; Partoens, B.; Weiss, A. H.

2017-01-01

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (<1.25 eV) to create valence-band holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition. PMID:28703225

A Combined Theoretical and Experimental Study of Dissociation of Charge Transfer States at the Donor-Acceptor Interface of Organic Solar Cells.

PubMed

Tscheuschner, Steffen; Bässler, Heinz; Huber, Katja; Köhler, Anna

2015-08-13

The observation that in efficient organic solar cells almost all electron-hole pairs generated at the donor-acceptor interface escape from their mutual coulomb potential remains to be a conceptual challenge. It has been argued that it is the excess energy dissipated in the course of electron or hole transfer at the interface that assists this escape process. The current work demonstrates that this concept is unnecessary to explain the field dependence of electron-hole dissociation. It is based upon the formalism developed by Arkhipov and co-workers as well as Baranovskii and co-workers. The key idea is that the binding energy of the dissociating "cold" charge-transfer state is reduced by delocalization of the hole along the polymer chain, quantified in terms of an "effective mass", as well as the fractional strength of dipoles existent at the interface in the dark. By covering a broad parameter space, we determine the conditions for efficient electron-hole dissociation. Spectroscopy of the charge-transfer state on bilayer solar cells as well as measurements of the field dependence of the dissociation yield over a broad temperature range support the theoretical predictions.

Bifacial Modified Charge Transport Materials for Highly Efficient and Stable Inverted Perovskite Solar Cells.

PubMed

Li, Xin; Zhao, Xingyue; Hao, Feng; Yin, Xuewen; Yao, Zhibo; Zhou, Yu; Shen, Heping; Lin, Hong

2018-05-30

Significant efforts have been devoted to enhancing both the performance and long-term stability of lead halide perovskite solar cells (PSCs) to promote their practical application. In this context, a self-assembled monolayer composed of a dye molecule is demonstrated for the first time to be efficient in passivating the surface of the hole transport layer, NiO x , in the p-i-n PSCs through multiple functions, including the minimization of energy-level offset, reducing surface trap states, and enhancing wetting between NiO x and perovskite layers coupled with increasing perovskite crystallinity. Consequently, the dye monolayer has sufficiently improved the hole extraction efficiency and suppressed the charge recombination, validated by steady and transient photoluminescence measurements and the electrochemical impedance analysis. Concurrently, a mixed layer of BaSnO 3 nanoparticles and [6,6]-phenyl-C 61 -butyric acid methyl (PCBM) (barium stannate (BSO)/PCBM) was exploited as an efficient electron transport layer, resulting in superior electron transport properties and correspondingly excellent device stability. By incorporating these bifacial modifications, the device performance of the inverted PSC was propelled to 16.2%, compared with 14.0% for that without any interfacial and compositional engineering. Benefiting from the excellent crystallinity of the perovskite through dye passivation and the blocking of moisture, oxygen, and ion migration by using the hybrid BSO/PCBM layer, over 90% of the initial power conversion efficiency has been preserved for the device after exposure to ambient air for 650 h.

High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact.

PubMed

Yin, Xuewen; Yao, Zhibo; Luo, Qiang; Dai, Xuezeng; Zhou, Yu; Zhang, Ye; Zhou, Yangying; Luo, Songping; Li, Jianbao; Wang, Ning; Lin, Hong

2017-01-25

NiO x is a promising hole-transporting material for perovskite solar cells due to its high hole mobility, good stability, and easy processability. In this work, we employed a simple solution-processed NiO x film as the hole-transporting layer in perovskite solar cells. When the thickness of the perovskite layer increased from 270 to 380 nm, the light absorption and photogenerated carrier density were enhanced and the transporting distance of electron and hole would also increase at the same time, resulting in a large charge transfer resistance and a long hole-extracted process in the device, characterized by the UV-vis, photoluminescence, and electrochemical impedance spectroscopy spectra. Combining both of these factors, an optimal thickness of 334.2 nm was prepared with the perovskite precursor concentration of 1.35 M. Moreover, the optimal device fabrication conditions were further achieved by optimizing the thickness of NiO x hole-transporting layer and PCBM electron selective layer. As a result, the best power conversion efficiency of 15.71% was obtained with a J sc of 20.51 mA·cm -2 , a V oc of 988 mV, and a FF of 77.51% with almost no hysteresis. A stable efficiency of 15.10% was caught at the maximum power point. This work provides a promising route to achieve higher efficiency perovskite solar cells based on NiO or other inorganic hole-transporting materials.

Au generation centres doped n+-Si: hole-injection adjustable anode for efficient organic light emission

NASA Astrophysics Data System (ADS)

Li, Y. Z.; Ran, G. Z.; Zhao, W. Q.; Qin, G. G.

2008-08-01

An organic light-emitting diode (OLED) with an n-Si-anode usually has an efficiency evidently lower than the OLED with the same structure with a p-Si-anode due to insufficient hole injection from the n-Si anode compared with the p-Si-anode. In this study, we find that introducing Au as generation centres with a suitable concentration into the n+-Si anode can enhance hole injection to match electron injection and then considerably promote the power efficiency. With optimizing Au generation centre concentration in the n+-Si anode, the OLED with a structure of n+-Si: Au/NPB/AlQ/Sm/Au reaches a highest power efficiency of 1.0 lm W-1, evidently higher than the reported highest power efficiency of 0.2 lm W-1 for its p-Si-anode counterpart. Furthermore, when the electron injection is enhanced by adopting BPhen:Cs2CO3 partly instead of AlQ as the electron transport material, and the Au generation centre concentration in the n+-Si anode is promoted correspondingly, then a highest power efficiency of 1.8 lm W-1 is reached. The role of Au generation centres in the n+-Si anode is discussed.

Tunable photoelectric response in NiO-based heterostructures by various orientations

NASA Astrophysics Data System (ADS)

Luo, Yidong; Qiao, Lina; Zhang, Qinghua; Xu, Haomin; Shen, Yang; Lin, Yuanhua; Nan, Cewen

2018-02-01

We engineered various orientations of NiO layers for NiO-based heterostructures (NiO/Au/STO) to investigate their effects on the generation of hot electrons and holes. Our calculation and experimental results suggested that bandgap engineering and the orientation of the hole transport layer (NiO) were crucial elements for the optimization of photoelectric responses. The (100)-orientated NiO/Au/STO achieved the highest photo-current density (˜30 μA/cm2) compared with (111) and (110)-orientated NiO films, which was attributed to the (100) films's lowest effective mass of photogenerated holes (˜1.82 m0) and the highest efficiency of separating and transferring electron-holes of the (100)-orientated sample. Our results opened a direction to design a high efficiency photoelectric solar cell.

Highly Enhanced Photoelectrochemical Water Oxidation Efficiency Based on Triadic Quantum Dot/Layered Double Hydroxide/BiVO 4 Photoanodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Yanqun; Wang, Ruirui; Yang, Ye

2016-08-03

The water oxidation half-reaction is considered to be a bottleneck for achieving highly efficient solar-driven water splitting due to its multiproton-coupled four-electron process and sluggish kinetics. Herein, a triadic photoanode consisting of dual-sized CdTe quantum dots (QDs), Co-based layered double hydroxide (LDH) nanosheets, and BiVO4 particles, that is, QD@LDH@BiVO4, was designed. Two sets of consecutive Type-II band alignments were constructed to improve photogenerated electron-hole separation in the triadic structure. The efficient charge separation resulted in a 2-fold enhancement of the photocurrent of the QD@LDH@BiVO4 photoanode. A significantly enhanced oxidation efficiency reaching above 90% in the low bias region (i.e., Emore » < 0.8 V vs RHE) could be critical in determining the overall performance of a complete photoelectrochemical cell. The faradaic efficiency for water oxidation was almost 90%. The conduction band energy of QDs is -1.0 V more negative than that of LDH, favorable for the electron injection to LDH and enabling a more efficient hole separation. The enhanced photon-to-current conversion efficiency and improved water oxidation efficiency of the triadic structure may result from the non-negligible contribution of hot electrons or holes generated in QDs. Such a band-matching and multidimensional triadic architecture could be a promising strategy for achieving high-efficiency photoanodes by sufficiently utilizing and maximizing the functionalities of QDs.« less

Enhanced photocatalytic activity of BiOCl by C70 modification and mechanism insight

NASA Astrophysics Data System (ADS)

Ma, Dongmei; Zhong, Junbo; Li, Jianzhang; Wang, Li; Peng, Rufang

2018-06-01

As an excellent photocatalyst which can compete with TiO2, BiOCl has triggered increasing attention. However, the practical application of BiOCl has been significantly limited by the fast recombination of the photoinduced electron-hole charge pairs. In this study, to further enhance the separation efficiency of photoinduced electron-hole charge pairs of BiOCl, a series of efficient BiOCl photocatalysts were prepared by C70 surface modification. The trapping experiments reveal that the main active species were determined to be superoxide radicals (O2rad -) and holes (h+) under simulated sunlight irradiation. The surface photovoltage spectroscopy (SPS) demonstrates that separation of the photoinduced electron-hole pairs has been significantly promoted, forming more radOH, proven by terephthalic acid photoluminescence probing technique. The photocatalytic evaluation results display that the C70/BiOCl photocatalysts exhibit much higher photocatalytic activity in decolorization of rhodamine B (RhB) than that of the bare BiOCl under the simulated sunlight irradiation. The excellent electron acceptability of C70 is conducive to the separation of the photogenerated carriers and results in efficient formation of O2rad -, proven by the results of SPS and electron spin-resonance (ESR), therefore the photocatalytic performance of C70/BiOCl has been greatly improved. Based on all these observations, an enhancement mechanism in photocatalytic performance of C70/BiOCl was proposed.

High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

PubMed

Jia, Chuancheng; Ma, Wei; Gu, Chunhui; Chen, Hongliang; Yu, Haomiao; Li, Xinxi; Zhang, Fan; Gu, Lin; Xia, Andong; Hou, Xiaoyuan; Meng, Sheng; Guo, Xuefeng

2016-06-08

A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.

Quantum efficiencies exceeding unity in amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanmaekelbergh, D.; Lagemaat, J. van de; Schropp, R.E.I.

1994-12-31

The experimental observation of internal quantum efficiencies above unity in crystalline silicon solar cells has brought up the question whether the generation of multiple electron/hole pairs has to be taken into consideration also in solar cells based on direct gap amorphous semiconductors. To study photogenerated carrier dynamics, the authors have applied Intensity Modulated Photocurrent Spectroscopy (IMPS) to hydrogenated amorphous silicon p-i-n solar cells. In the reverse voltage bias region at low illumination intensities it has been observed that the low frequency limit of the AC quantum yield Y increases significantly above unit with decreasing light intensity, indicating that more thanmore » one electron per photon is detected in the external circuit. This phenomenon can be explained by considering trapping and thermal emission of photogenerated carriers at intragap atmospheric dangling bond defect centers.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Huang, Yang; Wang, Junxi

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced bymore » 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.« less

Efficient Long-Range Hole Transport Through G-Quadruplexes.

PubMed

Wu, Jingyuan; Meng, Zhenyu; Lu, Yunpeng; Shao, Fangwei

2017-10-09

DNA offers a means of long-range charge transport for biology and electric nanodevices. Here, a series of tetra-stranded G-quadruplexes were assembled within a dendritic DNA architecture to explore oxidative charge transport (hole transport) through the G-quadruplex. Efficient charge transport was achieved over 28 Å upon UV irradiation. Over a longer G-quadruplex bridge, hole transport was escalated to a higher efficiency, which resulted in a higher yield than that of the optimal duplex DNA for charge transport, that is, the adenine tract. Efficient long-range hole transport suggests tetra-stranded G-quadruplexes, instead of an oxidation hotspot, hold better potential as an electron conduit than duplex DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-photon photoemission study of competing Auger and surface-mediated relaxation of hot electrons in CdSe quantum dot solids.

PubMed

Sippel, Philipp; Albrecht, Wiebke; Mitoraj, Dariusz; Eichberger, Rainer; Hannappel, Thomas; Vanmaekelbergh, Daniel

2013-04-10

Solids composed of colloidal quantum dots hold promise for third generation highly efficient thin-film photovoltaic cells. The presence of well-separated conduction electron states opens the possibility for an energy-selective collection of hot and equilibrated carriers, pushing the efficiency above the one-band gap limit. However, in order to reach this goal the decay of hot carriers within a band must be better understood and prevented, eventually. Here, we present a two-photon photoemission study of the 1Pe→1Se intraband relaxation dynamics in a CdSe quantum dot solid that mimics the active layer in a photovoltaic cell. We observe fast hot electron relaxation from the 1Pe to the 1Se state on a femtosecond-scale by Auger-type energy donation to the hole. However, if the oleic acid capping is exchanged for hexanedithiol capping, fast deep hole trapping competes efficiently with this relaxation pathway, blocking the Auger-type electron-hole energy exchange. A slower decay becomes then visible; we provide evidence that this is a multistep process involving the surface.

Plasmonic Landau damping in active environments

NASA Astrophysics Data System (ADS)

Thakkar, Niket; Montoni, Nicholas P.; Cherqui, Charles; Masiello, David J.

2018-03-01

Optical manipulation of charge on the nanoscale is of fundamental importance to an array of proposed technologies from selective photocatalysis to nanophotonics. Open plasmonic systems where collective electron oscillations release energy and charge to their environments offer a potential means to this end as plasmons can rapidly decay into energetic electron-hole pairs; however, isolating this decay from other plasmon-environment interactions remains a challenge. Here we present an analytic theory of noble-metal nanoparticles that quantitatively models plasmon decay into electron-hole pairs, demonstrates that this decay depends significantly on the nanoparticle's dielectric environment, and disentangles this effect from competing decay pathways. Using our approach to incorporate embedding material and substrate effects on plasmon-electron interaction, we show that predictions from the model agree with four separate experiments. Finally, examination of coupled nanoparticle-emitter systems further shows that the hybridized in-phase mode more efficiently decays to photons whereas the out-of-phase mode more efficiently decays to electron-hole pairs, offering a strategy to tailor open plasmonic systems for charge manipulation.

SELF-HEALING NANOMATERIALS: MULTIMILLION-ATOM REACTIVE MOLECULAR DYNAMICS SIMULATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki

Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH 3NH 3PbI 3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH 3NH 3more » sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. As a result, this work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.« less

The nature of free-carrier transport in organometal halide perovskites

PubMed Central

Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

2016-01-01

Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells. PMID:26781627

Electron-irradiated n+-Si as hole injection tunable anode of organic light-emitting diode

NASA Astrophysics Data System (ADS)

Li, Y. Z.; Wang, Z. L.; Wang, Y. Z.; Luo, H.; Xu, W. J.; Ran, G. Z.; Qin, G. G.

2013-01-01

Traditionally, n-type silicon is not regarded as a good anode of organic light emitting diode (OLED) due to the extremely low hole concentration in it; however, when doped with Au element which acts as carrier generation centers, it can be, as shown in our previous work. In this study, we demonstrate a new kind of carrier generation centers in n+-type silicon, which are the defects produced by 5 MeV electron irradiation. The density of carrier generation centers in the irradiated n+-Si anode can be controlled by tuning the electron irradiation time, and thus hole injection current in the OLEDs with the irradiated n+-Si anode can be optimized, leading to their much higher maximum efficiencies than those of the OLEDs with non-irradiated n+-Si anode. For a green phosphorescent OLED with the irradiated n+-Si anode, the current efficiency and power efficiency reach up to 12.1 cd/A and 4.2 lm/W, respectively.

Electronic transport in smectic liquid crystals

NASA Astrophysics Data System (ADS)

Shiyanovskaya, I.; Singer, K. D.; Twieg, R. J.; Sukhomlinova, L.; Gettwert, V.

2002-04-01

Time-of-flight measurements of transient photoconductivity have revealed bipolar electronic transport in phenylnaphthalene and biphenyl liquid crystals (LC), which exhibit several smectic mesophases. In the phenylnaphthalene LC, the hole mobility is significantly higher than the electron mobility and exhibits different temperature and phase behavior. Electron mobility in the range ~10-5 cm2/V s is temperature activated and remains continuous at the phase transitions. However, hole mobility is nearly temperature independent within the smectic phases, but is very sensitive to smectic order, 10-3 cm2/V s in the smectic-B (Sm-B) and 10-4 cm2/V s in the smectic-A (Sm-A) mesophases. The different behavior for holes and electron transport is due to differing transport mechanisms. The electron mobility is apparently controlled by rate-limiting multiple shallow trapping by impurities, but hole mobility is not. To explain the lack of temperature dependence for hole mobility within the smectic phases we consider two possible polaron transport mechanisms. The first mechanism is based on the hopping of Holstein small polarons in the nonadiabatic limit. The polaron binding energy and transfer integral values, obtained from the model fit, turned out to be sensitive to the molecular order in smectic mesophases. A second possible scenario for temperature-independent hole mobility involves the competion between two different polaron mechanisms involving so-called nearly small molecular polarons and small lattice polarons. Although the extracted transfer integrals and binding energies are reasonable and consistent with the model assumptions, the limited temperature range of the various phases makes it difficult to distinguish between any of the models. In the biphenyl LCs both electron and hole mobilities exhibit temperature activated behavior in the range of 10-5 cm2/V s without sensitivity to the molecular order. The dominating transport mechanism is considered as multiple trapping in the impurity sites. Temperature-activated mobility was treated within the disorder formalism, and activation energy and width of density of states have been calculated.

Dopant-Free Zinc Chlorophyll Aggregates as an Efficient Biocompatible Hole Transporter for Perovskite Solar Cells.

PubMed

Li, Mengzhen; Li, Yue; Sasaki, Shin-Ichi; Song, Jiaxing; Wang, Chen; Tamiaki, Hitoshi; Tian, Wenjing; Chen, Gang; Miyasaka, Tsutomu; Wang, Xiao-Feng

2016-10-06

Chlorophylls (Chls) are abundant, naturally occurring pigments that play key roles in light-harvesting and electron/energy transfer in natural photosynthetic apparatus. To demonstrate the idea that Chls are suitable hole transporters, we employed two Chl derivatives, Chl-1 and Chl-2, which self-assembled readily into π-stacking aggregates through a simple spincasting process, in perovskite solar cells (PSCs). The Chl aggregate films exhibit an ultra-smooth film surface, high hole mobility, appropriate energy levels, and efficient hole injection efficiencies that are all key characteristics for efficient hole transporters in PSCs. CH 3 NH 3 PbI 3-x Cl x -based PSCs with these Chls as hole transporters were fabricated and compared with P3HT as a standard hole transporter. PSCs based on Chl-1 and Chl-2 without the use of typical additives, such as 4-tert-butylpyridine and lithium bis(trifluoromethanesulfinyl)imide, gave power conversion efficiencies of 11.44 and 8.06 %, respectively. This research provides a unique way to incorporate low-cost and environmentally friendly natural photosynthetic materials in the development of highly efficient photovoltaic devices. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measurement of Effective Drift Velocities of Electrons and Holes in Shallow Multiple Quantum Well P-I Modulators

NASA Astrophysics Data System (ADS)

Yang, Ching-Mei

1995-01-01

P-i-n diodes containing multiple quantum wells (MQWs) in the i-region are the building blocks for photonic devices. When we apply electric field across these devices and illuminate it with light, photo-carriers are created in the i-region. These carriers escape from the wells and drift toward the electrodes; thus photo-voltage is created. The rise- and decay-times of photo-voltages are related to the transport of carriers. In this dissertation, we present theoretical and experimental studies on carrier transport mechanisms of three shallow MQW GaAs/Al _{x}Ga_{1-x}As p-i-n diodes (x = 0.02, 0.04, 0.08) at various bias voltages. We start with the description of the sample structures and their package. We then present the characteristics of these samples including their transmission spectra and responsivity. We will demonstrate that the over-all high quality of these samples, including a strong exciton resonant absorption, ~100% internal quantum efficiencies and completely depleted i-region at bias between +0.75 V to -5 V bias. In our theoretical studies, we first discuss the possible carrier sweep-out mechanisms and estimate the response times associated with these mechanisms. Based on our theoretical model, we conclude that only the drift times of carriers and enhanced diffusion times are important for shallow MQW p-i-n diodes: at high bias, the fast drift times of electrons and holes control the rise-times; at low bias, the slow drift times of holes and the enhanced diffusion times control the decay-times. We have performed picosecond time-resolved pump/probe electro-absorption measurements on these samples. We then obtained the drift times, effective drift velocities and effective mobilities of electrons and holes for these devices. We find that the carrier effective drift velocities (especially for holes) seemed insensitive to the Al concentration in the barriers (in the range of x = 2% to 8%), even though the x = 2% sample does show an overall faster response time. We think the slight difference of the rise- and decay-times of these devices may also be affected by random differences between the samples.

Electron-hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2018-02-01

Metal oxide nanoparticle resists have attracted much attention as the next-generation resist used for the high-volume production of semiconductor devices. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In this study, the energy deposition in a zirconium oxide (ZrO2) nanoparticle resist was investigated. The numbers of electron-hole pairs generated in a ZrO2 core and an methacrylic acid (MAA) ligand shell upon exposure to 1 mJ cm-2 (exposure dose) extreme ultraviolet (EUV) radiations were theoretically estimated to be 0.16 at most and 0.04-0.17 cm2 mJ-1, respectively. By comparing the calculated distribution of electron-hole pairs with the line-and-space patterns of the ZrO2 nanoparticle resist fabricated by an EUV exposure tool, the number of electron-hole pairs required for the solubility change of the resist films was estimated to be 1.3-2.2 per NP. NP denotes a nanoparticle consisting of a metal oxide core with a ligand shell. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in the metal oxide core for the chemical change of ligand molecules.

Higher-efficiency photoelectrochemical electrodes of titanium dioxide-based nanoarrays sensitized simultaneously with plasmonic silver nanoparticles and multiple metal sulfides photosensitizers

NASA Astrophysics Data System (ADS)

Guo, Keying; Liu, Zhifeng; Han, Jianhua; Zhang, Xueqi; Li, Yajun; Hong, Tiantian; Zhou, Cailou

2015-07-01

This paper describes a novel design of high-efficiency photoelectrochemical water splitting electrode, i.e., ordered TiO2 nanorod arrays (NRs) sensitized simultaneously with noble metal (Ag), binary metal sulfides (Ag2S) and ternary metal sulfides (Ag3CuS2) multiple photosensitizers for the first time. The TiO2/Ag/Ag2S/Ag3CuS2 NRs heterostructure is successfully synthesized through successive ion layer adsorption and reaction (SILAR) and a simple ion-exchange process based on ionic reaction mechanism. On the basis of an optimal quantity of Ag, Ag2S and Ag3CuS2 nanoparticles, such TiO2/Ag/Ag2S/Ag3CuS2 NRs exhibit a higher photoelectrochemical activity ever reported for TiO2-based nanoarrays in PEC water splitting, the photocurrent density is up to 9.82 mA cm-2 at 0.47 V versus Ag/AgCl, respectively. This novel architecture is able to increase electron collection efficiency and suppress carrier recombination via (i) a higher efficiency of light-harvesting through these multiple photosensitizers (Ag, Ag2S and Ag3CuS2); (ii) the efficient separation of photo-induced electrons and holes due to the direct electrical pathways; (iii) the surface plasmon resonance (SPR) effect of Ag nanoparticles, which enhances the efficient charge separation and high carrier mobility. This work is useful to explore feasible routes to further enhance the performance of oxide semiconductors for PEC water splitting to produce clean H2 energy.

High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

PubMed Central

Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

2013-01-01

Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

Highly efficient organic electroluminescent diodes realized by efficient charge balance with optimized electron and hole transport layers

NASA Astrophysics Data System (ADS)

Khan, M. A.; Xu, Wei; Wei, Fuxiang; Bai, Yu; Jiang, X. Y.; Zhang, Z. L.; Zhu, W. Q.

2007-11-01

Highly efficient organic electroluminescent devices (OLEDs) were developed based on 4,7-diphenyl-1, 10-phenanthroline (BPhen) as the electron transport layer (ETL), tris-(8-hydroxyquinoline) aluminum (Alq 3) as the emission layer (EML) and N,Ń-bis-[1-naphthy(-N,Ńdiphenyl-1,1'-biphenyl-4,4'-diamine)] (NPB) as the hole transport layer (HTL). The typical device structure was glass substrate/ ITO/ NPB/ Alq 3/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of 5×10 -4 cm 2 V -1 s -1, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of 1361 cd/m 2 at a current density of 20 mA/cm 2. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Microstructure, Morphology, and Nanomechanical Properties Near Fine Holes Produced by Electro-Discharge Machining

NASA Astrophysics Data System (ADS)

Blau, P. J.; Howe, J. Y.; Coffey, D. W.; Trejo, R. M.; Kenik, E. D.; Jolly, B. C.; Yang, N.

2012-08-01

Fine holes in metal alloys are employed for many important technological purposes, including cooling and the precise atomization of liquids. For example, they play an important role in the metering and delivery of fuel to the combustion chambers in energy-efficient, low-emission diesel engines. Electro-discharge machining (EDM) is one process employed to produce such holes. Since the hole shape and bore morphology can affect fluid flow, and holes also represent structural discontinuities in the tips of the spray nozzles, it is important to understand the microstructures adjacent to these holes, the features of the hole walls, and the nanomechanical properties of the material that was in some manner altered by the EDM hole-making process. Several techniques were used to characterize the structure and properties of spray-holes in a commercial injector nozzle. These include scanning electron microscopy, cross sectioning and metallographic etching, bore surface roughness measurements by optical interferometry, scanning electron microscopy, and transmission electron microscopy of recast EDM layers extracted with the help of a focused ion beam.

Efficient algorithms for the simulation of non-adiabatic electron transfer in complex molecular systems: application to DNA.

PubMed

Kubař, Tomáš; Elstner, Marcus

2013-04-28

In this work, a fragment-orbital density functional theory-based method is combined with two different non-adiabatic schemes for the propagation of the electronic degrees of freedom. This allows us to perform unbiased simulations of electron transfer processes in complex media, and the computational scheme is applied to the transfer of a hole in solvated DNA. It turns out that the mean-field approach, where the wave function of the hole is driven into a superposition of adiabatic states, leads to over-delocalization of the hole charge. This problem is avoided using a surface hopping scheme, resulting in a smaller rate of hole transfer. The method is highly efficient due to the on-the-fly computation of the coarse-grained DFT Hamiltonian for the nucleobases, which is coupled to the environment using a QM/MM approach. The computational efficiency and partial parallel character of the methodology make it possible to simulate electron transfer in systems of relevant biochemical size on a nanosecond time scale. Since standard non-polarizable force fields are applied in the molecular-mechanics part of the calculation, a simple scaling scheme was introduced into the electrostatic potential in order to simulate the effect of electronic polarization. It is shown that electronic polarization has an important effect on the features of charge transfer. The methodology is applied to two kinds of DNA sequences, illustrating the features of transfer along a flat energy landscape as well as over an energy barrier. The performance and relative merit of the mean-field scheme and the surface hopping for this application are discussed.

Ultrafast electron and hole transfer dynamics of a solar cell dye containing hole acceptors on mesoporous TiO2 and Al2O3.

PubMed

Scholz, Mirko; Flender, Oliver; Boschloo, Gerrit; Oum, Kawon; Lenzer, Thomas

2017-03-08

The stability of dye cations against recombination with conduction band electrons in mesoporous TiO 2 electrodes is a key property for improving light harvesting in dye-sensitised solar cells. Using ultrafast transient broadband absorption spectroscopy, we monitor efficient intramolecular hole transfer in the solar cell dye E6 having two peripheral triarylamine acceptors. After photoexcitation, two hole transfer mechanisms are identified: a concerted mechanism for electron injection and hole transfer (2.4 ps) and a sequential mechanism with time constants of 3.9 ps and 30 ps. This way the dye retards unwanted recombination with a TiO 2 conduction band electron by quickly moving the hole further away from the surface. Contact of the E6/TiO 2 surface with the solvent acetonitrile has almost no influence on the electron injection and hole transfer kinetics. Fast hole transfer (2.8 ps) is also observed on a "non-injecting" Al 2 O 3 surface generating a radical cation-radical anion species with a lifetime of 530 ps. The findings confirm the good intramolecular hole transfer properties of this dye on both thin films. In contrast, intramolecular hole transfer does not occur in the mid-polar organic solvent methyl acetate. This is confirmed by TDDFT calculations suggesting a polarity-induced reduction of the driving force for hole transfer. In methyl acetate, only the relaxation of the initially photoexcited core chromophore is observed including solvent relaxation processes of the electronically excited state S 1 /ICT.

Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment)

NASA Astrophysics Data System (ADS)

Vaisburd, D. I.; Kharitonova, S. V.

1997-11-01

A short high-power pulse of ionizing radiation creates a high concentration of nonequilibrium electrons and holes in a dielectric. They quickly lose their energy, generating a multiplicity of secondary quasiparticles: electron—hole pairs, excitons, plasmons, phonons of all types, and others. When the kinetic energy of an electron becomes less that some value EΔ≈(1.3-2)Eg it loses the ability to perform collisional ionization and electron excitations of the dielectric medium. Such an electron is said to be ionization-passive. It relaxes to the bottom of the lower conduction band by emitting phonons. Similarly a hole becomes ionization-passive when it “floats up” above some level EH and loses the ability for Auger ionization of the dielectric medium. It continues to float upward to the ceiling of the upper valance band only by emitting phonons. The concentrations of ionization-passive electrons and holes are larger by several orders of magnitude than those of the active electrons and holes and consequently make of a far larger contribution to many kinetic processes such as luminescence. Intraband and interband quantum transitions make the greatest contribution to the fundamental (independent of impurities and intrinsic defects) electromagnetic radiation of ionization-passive electrons and holes. Consequently the brightest types of purely fundamental luminescence of strongly nonequilibrium electrons and holes are intraband and interband luminescence. These forms of luminescence, discovered relatively recently, carry valuable information on the high-energy states of the electrons in the conduction band and of the holes in the valence band of a dielectric. Experimental investigations of these types of luminescence were made, mainly on alkali halide crystals which were excited by nanoseconal pulses of high-current-density electrons and by two-photon absorption of the ultraviolet harmonics of pulsed laser radiation beams of nanosecond and picosecond duration. The present article gives the results of theoretical calculations of the spectra and other characteristics of intraband electron and interband hole luminescence which are compared with the experimental data.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

New acceptor-bridge-donor strategy for enhancing NLO response with long-range excess electron transfer from the NH2...M/M3O donor (M = Li, Na, K) to inside the electron hole cage C20F19 acceptor through the unusual σ chain bridge (CH2)4.

PubMed

Bai, Yang; Zhou, Zhong-Jun; Wang, Jia-Jun; Li, Ying; Wu, Di; Chen, Wei; Li, Zhi-Ru; Sun, Chia-Chung

2013-04-04

Using the strong electron hole cage C20F19 acceptor, the NH2...M/M3O (M = Li, Na, and K) complicated donors with excess electron, and the unusual σ chain (CH2)4 bridge, we construct a new kind of electride molecular salt e(-)@C20F19-(CH2)4-NH2...M(+)/M3O(+) (M = Li, Na, and K) with excess electron anion inside the hole cage (to be encapsulated excess electron-hole pair) serving as a new A-B-D strategy for enhancing nonlinear optical (NLO) response. An interesting push-pull mechanism of excess electron generation and its long-range transfer is exhibited. The excess electron is pushed out from the (super)alkali atom M/M3O by the lone pair of NH2 in the donor and further pulled inside the hole cage C20F19 acceptor through the efficient long σ chain (CH2)4 bridge. Owing to the long-range electron transfer, the new designed electride molecular salts with the excess electron-hole pair exhibit large NLO response. For the e(-)@C20F19-(CH2)4-NH2...Na(+), its large first hyperpolarizability (β0) reaches up to 9.5 × 10(6) au, which is about 2.4 × 10(4) times the 400 au for the relative e(-)@C20F20...Na(+) without the extended chain (CH2)4-NH2. It is shown that the new strategy is considerably efficient in enhancing the NLO response for the salts. In addition, the effects of different bridges and alkali atomic number on β0 are also exhibited. Further, three modulating factors are found for enhancing NLO response. They are the σ chain bridge, bridge-end group with lone pair, and (super)alkali atom. The new knowledge may be significant for designing new NLO materials and electronic devices with electrons inside the cages. They may also be the basis of establishing potential organic chemistry with electron-hole pair.

Observation of topological surface states and strong electron/hole imbalance in extreme magnetoresistance compound LaBi

NASA Astrophysics Data System (ADS)

Jiang, J.; Schröter, N. B. M.; Wu, S.-C.; Kumar, N.; Shekhar, C.; Peng, H.; Xu, X.; Chen, C.; Yang, H. F.; Hwang, C.-C.; Mo, S.-K.; Felser, C.; Yan, B. H.; Liu, Z. K.; Yang, L. X.; Chen, Y. L.

2018-02-01

The recent discovery of the extreme magnetoresistance (XMR) in the nonmagnetic rare-earth monopnictides La X (X = P, As, Sb, Bi,), a recently proposed new topological semimetal family, has inspired intensive research effort in the exploration of the correlation between the XMR and their electronic structures. In this work, using angle-resolved photoemission spectroscopy to investigate the three-dimensional band structure of LaBi, we unraveled its topologically nontrivial nature with the observation of multiple topological surface Dirac fermions, as supported by our ab initio calculations. Furthermore, we observed substantial imbalance between the volume of electron and hole pockets, which rules out the electron-hole compensation as the primary cause of the XMR in LaBi.

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop.

PubMed

Jhalani, Vatsal A; Zhou, Jin-Jian; Bernardi, Marco

2017-08-09

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light-emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in GaN, focusing on electron-phonon (e-ph) scattering and the cooling and nanoscale dynamics of hot carriers. We find that e-ph scattering is significantly faster for holes compared to electrons and that for hot carriers with an initial 0.5-1 eV excess energy, holes take a significantly shorter time (∼0.1 ps) to relax to the band edge compared to electrons, which take ∼1 ps. The asymmetry in the hot carrier dynamics is shown to originate from the valence band degeneracy, the heavier effective mass of holes compared to electrons, and the details of the coupling to different phonon modes in the valence and conduction bands. We show that the slow cooling of hot electrons and their long ballistic mean free paths (over 3 nm at room temperature) are a possible cause of efficiency droop in GaN light-emitting diodes. Taken together, our work sheds light on the ultrafast dynamics of hot carriers in GaN and the nanoscale origin of efficiency droop.

Electron-hole diffusion lengths >175 μm in solution-grown CH 3NH 3PbI 3 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Qingfeng; Fang, Yanjun; Shao, Yuchuan

Long, balanced electron and hole diffusion lengths greater than 100 nanometers in the polycrystalline organolead trihalide compound CH 3NH 3PbI 3 are critical for highly efficient perovskite solar cells. We found that the diffusion lengths in CH 3NH 3PbI 3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm –2) illumination and exceed 3 millimeters under weak light for both electrons and holes. The internal quantum efficiencies approach 100% in 3-millimeter-thick single-crystal perovskite solar cells under weak light. These long diffusion lengths result from greater carrier mobility, longer lifetime, and much smallermore » trap densities in the single crystals than in polycrystalline thin films. As a result, the long carrier diffusion lengths enabled the use of CH 3NH 3PbI 3 in radiation sensing and energy harvesting through the gammavoltaic effect, with an efficiency of 3.9% measured with an intense cesium-137 source.« less

Electron-hole diffusion lengths >175 μm in solution-grown CH 3NH 3PbI 3 single crystals

DOE PAGES

Dong, Qingfeng; Fang, Yanjun; Shao, Yuchuan; ...

2015-02-27

Long, balanced electron and hole diffusion lengths greater than 100 nanometers in the polycrystalline organolead trihalide compound CH 3NH 3PbI 3 are critical for highly efficient perovskite solar cells. We found that the diffusion lengths in CH 3NH 3PbI 3 single crystals grown by a solution-growth method can exceed 175 micrometers under 1 sun (100 mW cm –2) illumination and exceed 3 millimeters under weak light for both electrons and holes. The internal quantum efficiencies approach 100% in 3-millimeter-thick single-crystal perovskite solar cells under weak light. These long diffusion lengths result from greater carrier mobility, longer lifetime, and much smallermore » trap densities in the single crystals than in polycrystalline thin films. As a result, the long carrier diffusion lengths enabled the use of CH 3NH 3PbI 3 in radiation sensing and energy harvesting through the gammavoltaic effect, with an efficiency of 3.9% measured with an intense cesium-137 source.« less

Toward Revealing the Critical Role of Perovskite Coverage in Highly Efficient Electron-Transport Layer-Free Perovskite Solar Cells: An Energy Band and Equivalent Circuit Model Perspective.

PubMed

Huang, Like; Xu, Jie; Sun, Xiaoxiang; Du, Yangyang; Cai, Hongkun; Ni, Jian; Li, Juan; Hu, Ziyang; Zhang, Jianjun

2016-04-20

Currently, most efficient perovskite solar cells (PVKSCs) with a p-i-n structure require simultaneously electron transport layers (ETLs) and hole transport layers (HTLs) to help collecting photogenerated electrons and holes for obtaining high performance. ETL free planar PVKSC is a relatively new and simple structured solar cell that gets rid of the complex and high temperature required ETL (such as compact and mesoporous TiO2). Here, we demonstrate the critical role of high coverage of perovskite in efficient ETL free PVKSCs from an energy band and equivalent circuit model perspective. From an electrical point of view, we confirmed that the low coverage of perovskite does cause localized short circuit of the device. With coverage optimization, a planar p-i-n(++) device with a power conversion efficiency of over 11% was achieved, implying that the ETL layer may not be necessary for an efficient device as long as the perovskite coverage is approaching 100%.

Addressing the efficiency roll-off in a fluorescent OLED by facile electron transport layer doping and carrier confinement

NASA Astrophysics Data System (ADS)

Soman, Anjaly; M, Manuraj; Unni, K. N. Narayanan

2018-05-01

Organic light emitting diodes (OLEDs) often face the issue of decreasing power efficiency with increasing brightness. Loss of charge carrier balance is one of the factors contributing to the efficiency roll-off. We demonstrate that by using a combination of doped electron transport layer (ETL) and a specially chosen electron blocking layer (EBL) having high hole mobility, this efficiency roll-off can be effectively suppressed. A tris-(8-hydroxyquinoline) aluminium (Alq3) based OLED has been fabricated with 2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H,11H-10-(2-benzothiazolyl) quinolizino-[9,9a, 1n gh]coumarin (C545T) as the emissive dopant. Bulk doping of the ETL with lithium fluoride (LiF) was optimized to increase the luminous intensity as well as the current efficiency. An EBL with high hole mobility introduced between the EML and the hole transport layer (HTL) improved the performance drastically, and the device brightness at 9 V got improved by a factor of 2.5 compared to that of the control device. While increasing the brightness from 100 cd/m2 to 1000 cd/m2, the power efficiency drop was 47% for the control device whereas only a drop of 15% was observed for the modified device. The possible mechanisms for the enhanced performance are discussed.

Selective isolation of the electron or hole in photocatalysis: ZnO-TiO2 and TiO2-ZnO core-shell structured heterojunction nanofibers via electrospinning and atomic layer deposition.

PubMed

Kayaci, Fatma; Vempati, Sesha; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi; Uyar, Tamer

2014-06-07

Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated charge carrier is more efficient in the process of catalysis and the associated mechanism. To address this issue we have fabricated core-shell heterojunction (CSHJ) nanofibers from ZnO and TiO2 in two combinations where only the 'shell' part of the heterojunction is exposed to the environment to participate in the photocatalysis. Core and shell structures were fabricated via electrospinning and atomic layer deposition, respectively which were then subjected to calcination. These CSHJs were characterized and studied for photocatalytic activity (PCA). These two combinations expose electrons or holes selectively to the environment. Under suitable illumination of the ZnO-TiO2 CSHJ, e/h pairs are created mainly in TiO2 and the electrons take part in catalysis (i.e. reduce the organic dye) at the conduction band or oxygen vacancy sites of the 'shell', while holes migrate to the core of the structure. Conversely, holes take part in catalysis and electrons diffuse to the core in the case of a TiO2-ZnO CSHJ. The results further revealed that the TiO2-ZnO CSHJ shows ∼1.6 times faster PCA when compared to the ZnO-TiO2 CSHJ because of efficient hole capture by oxygen vacancies, and the lower mobility of holes.

The Radiative Efficiency and Spectra of Slowly Accreting Black Holes from Two-temperature GRRMHD Simulations

DOE PAGES

Ryan, Benjamin R.; Ressler, Sean M.; Dolence, Joshua C.; ...

2017-07-31

In this paper, we present axisymmetric numerical simulations of radiatively inefficient accretion flows onto black holes combining general relativity, magnetohydrodynamics, self-consistent electron thermodynamics, and frequency-dependent radiation transport. We investigate a range of accretion rates up tomore » $${10}^{-5}\\,{\\dot{M}}_{\\mathrm{Edd}}$$ onto a $${10}^{8}\\,{M}_{\\odot }$$ black hole with spin $${a}_{\\star }=0.5$$. We report on averaged flow thermodynamics as a function of accretion rate. We present the spectra of outgoing radiation and find that it varies strongly with accretion rate, from synchrotron-dominated in the radio at low $$\\dot{M}$$ to inverse-Compton-dominated at our highest $$\\dot{M}$$. In contrast to canonical analytic models, we find that by $$\\dot{M}\\approx {10}^{-5}\\,{\\dot{M}}_{\\mathrm{Edd}}$$, the flow approaches $$\\sim 1 \\% $$ radiative efficiency, with much of the radiation due to inverse-Compton scattering off Coulomb-heated electrons far from the black hole. Finally, these results have broad implications for modeling of accreting black holes across a large fraction of the accretion rates realized in observed systems.« less

The Radiative Efficiency and Spectra of Slowly Accreting Black Holes from Two-temperature GRRMHD Simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryan, Benjamin R.; Ressler, Sean M.; Dolence, Joshua C.

In this paper, we present axisymmetric numerical simulations of radiatively inefficient accretion flows onto black holes combining general relativity, magnetohydrodynamics, self-consistent electron thermodynamics, and frequency-dependent radiation transport. We investigate a range of accretion rates up tomore » $${10}^{-5}\\,{\\dot{M}}_{\\mathrm{Edd}}$$ onto a $${10}^{8}\\,{M}_{\\odot }$$ black hole with spin $${a}_{\\star }=0.5$$. We report on averaged flow thermodynamics as a function of accretion rate. We present the spectra of outgoing radiation and find that it varies strongly with accretion rate, from synchrotron-dominated in the radio at low $$\\dot{M}$$ to inverse-Compton-dominated at our highest $$\\dot{M}$$. In contrast to canonical analytic models, we find that by $$\\dot{M}\\approx {10}^{-5}\\,{\\dot{M}}_{\\mathrm{Edd}}$$, the flow approaches $$\\sim 1 \\% $$ radiative efficiency, with much of the radiation due to inverse-Compton scattering off Coulomb-heated electrons far from the black hole. Finally, these results have broad implications for modeling of accreting black holes across a large fraction of the accretion rates realized in observed systems.« less

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedancemore » spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.« less

Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

PubMed

Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

2015-01-28

The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

Aspect ratio dependence of auger recombination and carrier multiplication in PbSe nanorods.

PubMed

Padilha, Lazaro A; Stewart, John T; Sandberg, Richard L; Bae, Wan Ki; Koh, Weon-Kyu; Pietryga, Jeffrey M; Klimov, Victor I

2013-03-13

Nanomaterials with efficient carrier multiplication (CM), that is, generation of multiple electron-hole pairs by single photons, have been the object of intense scientific interest as potential enablers of high efficiency generation-III photovoltaics. In this work, we explore nanocrystal shape control as a means for enhancing CM. Specifically, we investigate the influence of aspect ratio (ρ) of PbSe nanorods (NRs) on both CM and the inverse of this process, Auger recombination. We observe that Auger lifetimes in NRs increase with increasing particle volume and for a fixed cross-sectional size follow a linear dependence on the NR length. For a given band gap energy, the CM efficiency in NRs shows a significant dependence on aspect ratio and exhibits a maximum at ρ ∼ 6-7 for which the multiexciton yields are a factor of ca. 2 higher than those in quantum dots with a similar bandgap energy. To rationalize our experimental observations, we analyze the influence of dimensionality on both CM and non-CM energy-loss mechanisms and offer possible explanations for the seemingly divergent effects the transition from zero- to one-dimensional confinement has on the closely related processes of Auger recombination and CM.

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sturm, James

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

A multi-band, multi-level, multi-electron model for efficient FDTD simulations of electromagnetic interactions with semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

2015-08-01

We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.

Towards efficient solar hydrogen production by intercalated carbon nitride photocatalyst.

PubMed

Gao, Honglin; Yan, Shicheng; Wang, Jiajia; Huang, Yu An; Wang, Peng; Li, Zhaosheng; Zou, Zhigang

2013-11-07

The development of efficient photocatalytic material for converting solar energy to hydrogen energy as viable alternatives to fossil-fuel technologies is expected to revolutionize energy shortage and environment issues. However, to date, the low quantum yield for solar hydrogen production over photocatalysts has hindered advances in the practical applications of photocatalysis. Here, we show that a carbon nitride intercalation compound (CNIC) synthesized by a simple molten salt route is an efficient polymer photocatalyst with a high quantum yield. We found that coordinating the alkali metals into the C-N plane of carbon nitride will induce the un-uniform spatial charge distribution. The electrons are confined in the intercalated region while the holes are in the far intercalated region, which promoted efficient separation of photogenerated carriers. The donor-type alkali metal ions coordinating into the nitrogen pots of carbon nitrides increase the free carrier concentration and lead to the formation of novel nonradiative paths. This should favor improved transport of the photogenerated electron and hole and decrease the electron-hole recombination rate. As a result, the CNIC exhibits a quantum yield as high as 21.2% under 420 nm light irradiation for solar hydrogen production. Such high quantum yield opens up new opportunities for using cheap semiconducting polymers as energy transducers.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

[Influence of MnO3 on Photoelectric Performance in Organic Light Emitting Diodes].

PubMed

Guan, Yun-xia; Chen, Li-jia; Chen, Ping; Fu, Xiao-qiang; Niu, Lian-bin

2016-03-01

Organic Light Emitting Diodes (OLEDs) has been a promising new research point that has received much attention recently. Emission in a conventional OLED originates from the recombination of carriers (electrons and holes) that are injected from external electrodes. In the device, Electrons, on the other hand, are injected from the Al cathode to an electron-transporting layer and travel to the same emissive zone. Holes are injected from the transparent ITO anode to a hole-transporting layer and holes reach an emitting zone through the holetransporting layer. Electrons and holes recombine at the emissive film to formsinglet excited states, followed by emissive light. It is because OLED is basically an optical device and its structure consists of organic or inorganic layers of sub-wavelength thickness with different refractive indices. When the electron and holes are injected through the electrodes, they combine in the emission zone emitting the photons. These photons will have the reflection and transmission at each interface and the interference will determine the intensity profile. The emissive light reflected at the interfaces or the metallic electrode returns to the emissive layer and affects the radiation current efficiency. Microcavity OLED can produce saturated colors and narrow the emission spetrum as a new kind of technique. In the paper, we fabricate microcavity OLED using glass substrate. Ag film acts as the anode reflector mirror; NPB serves as the hole-transporting material; Alq3 is electron-transporting material and organic emissive material; Ag film acts as cathode reflector mirror. The microcavity OLED structures named as A, B, C and D are glass/Ag(15 nm)/MoO3 (x nm)/NPB(50 nm)/Alq3 (60 nm)/A1(100 nm). Here, A, x = 4 nm; B, x = 7 nm; C, x = 10 nm; D, x = 13 nm. The characteristic voltage, brightness and current of these devices are investigated in the electric field. The luminance from the Devices A, B, C and D reaches the luminance of 928, 1 369, 2 550 and 2 035 cd x m(-2), respectively at 13 V. At 60 mA x cm(-2), the current efficiency of the microcavity OLEDs using MnO3 are about 2.2, 2.6, 3.1 and 2.6 cd x A(-2) respectively. It is found that electrons are majority carriers and holes are minority carriers in this microcavity OLEDs. MnO3 film can improve hole injection ability from 4 to 10 nm. In addition, hole injection ability is increased with the increasing thickness of the MnO3 film.

Tuning charge balance in PHOLEDs with ambipolar host materials to achieve high efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padmaperuma, Asanga B.; Koech, Phillip K.; Cosimbescu, Lelia

2009-08-27

The efficiency and stability of blue organic light emitting devices (OLEDs) continue to be a primary roadblock to developing organic solid state white lighting. For OLEDs to meet the high power conversion efficiency goal, they will require both close to 100% internal quantum efficiency and low operating voltage in a white light emitting device.1 It is generally accepted that such high quantum efficiency, can only be achieved with the use of organometallic phosphor doped OLEDs. Blue OLEDs are particularly important for solid state lighting. The simplest (and therefore likely the lowest cost) method of generating white light is to downmore » convert part of the emission from a blue light source with a system of external phosphors.2 A second method of generating white light requires the superposition of the light from red, green and blue OLEDs in the correct ratio. Either of these two methods (and indeed any method of generating white light with a high color rendering index) critically depends on a high efficiency blue light component.3 A simple OLED generally consists of a hole-injecting anode, a preferentially hole transporting organic layer (HTL), an emissive layer that contains the recombination zone and ideally transports both holes and electrons, a preferentially electron-transporting layer (ETL) and an electron-injecting cathode. Color in state-of-the-art OLEDs is generated by an organometallic phosphor incorporated by co-sublimation into the emissive layer (EML).4 New materials functioning as hosts, emitters, charge transporting, and charge blocking layers have been developed along with device architectures leading to electrophosphorescent based OLEDs with high quantum efficiencies near the theoretical limit. However, the layers added to the device architecture to enable high quantum efficiencies lead to higher operating voltages and correspondingly lower power efficiencies. Achievement of target luminance power efficiencies will require new strategies for lowering operating voltages, particularly if this is to be achieved in a device that can be manufactured at low cost. To avoid the efficiency losses associated with phosphorescence quenching by back-energy transfer from the dopant onto the host, the triplet excited states of the host material must be higher in energy than the triplet excited state of the dopant.5 This must be accomplished without sacrificing the charge transporting properties of the composite.6 Similar problems limit the efficiency of OLED-based displays, where blue light emitters are the least efficient and least stable. We previously demonstrated the utility of organic phosphine oxide (PO) materials as electron transporting HMs for FIrpic in blue OLEDs.7 However, the high reluctance of PO materials to oxidation and thus, hole injection limits the ability to balance charge injection and transport in the EML without relying on charge transport by the phosphorescent dopant. PO host materials were engineered to transport both electrons and holes in the EML and still maintain high triplet exciton energy to ensure efficient energy transfer to the dopant (Figure 1). There are examples of combining hole transporting moieties (mainly aromatic amines) with electron transport moieties (e.g., oxadiazoles, triazines, boranes)8 to develop new emitter and host materials for small molecule and polymer9 OLEDs. The challenge is to combine the two moieties without lowering the triplet energy of the target molecule. For example, coupling of a dimesitylphenylboryl moiety with a tertiary aromatic amine (FIAMBOT) results in intramolecular electron transfer from the amine to the boron atom through the bridging phenyl. The mesomeric effect of the dimesitylphenylboryl unit acts to extend conjugation and lowers triplet exciton energies (< 2.8 eV) rendering such systems inadequate as ambipolar hosts for blue phosphors.« less

Synthesis of CdS/BiOBr nanosheets composites with efficient visible-light photocatalytic activity

NASA Astrophysics Data System (ADS)

Cui, Haojie; Zhou, Yawen; Mei, Jinfeng; Li, Zhongyu; Xu, Song; Yao, Chao

2018-01-01

The efficient charge separation action and visible-light responding could enhance the photocatalytic property of photocatalysts. In the present study, novel CdS/BiOBr nanosheets composites were synthesized by a three-step process. The as-prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (FE-SEM), diffuse reflection spectroscopy (DRS), Raman spectroscopy and photoluminescence (PL). Under visible-light irradiation, the as-prepared CdS nanoparticles decorated BiOBr nanosheets exhibited the excellent photocatalytic activity and high stability for malachite green (MG) degradation. The photodegradation achieved maximum degradation efficiency (99%) using CdS/BiOBr-3 composites as photocatalyst. Furthermore, the possible photocatalytic mechanism upon CdS/BiOBr composites was also discussed through radical and holes trapping experiments. The heterostructure between CdS and BiOBr improved photocatalytic activity dramatically, which greatly promoted migration rate of the photoinduced electrons besides limiting the recombination of photogenerated electron-hole pairs.

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

NASA Technical Reports Server (NTRS)

Zhao, Kai; Lo, YuHwa; Farr, William

2010-01-01

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.

InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

NASA Astrophysics Data System (ADS)

Lao, Yan-Feng; Wolde, Seyoum; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Liu, H. C.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S.

2013-12-01

An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5-3 and 3-10 μm are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e.g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1.8×109 cm.Hz1/2/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs.

Spatial Electron-hole Separation in a One Dimensional Hybrid Organic-Inorganic Lead Iodide

NASA Astrophysics Data System (ADS)

Savory, Christopher N.; Palgrave, Robert G.; Bronstein, Hugo; Scanlon, David O.

2016-02-01

The increasing efficiency of the inorganic-organic hybrid halides has revolutionised photovoltaic research. Despite this rapid progress, the significant issues of poor stability and toxicity have yet to be suitably overcome. In this article, we use Density Functional Theory to examine (Pb2I6) · (H2DPNDI) · (H2O) · (NMP), an alternative lead-based hybrid inorganic-organic solar absorber based on a photoactive organic cation. Our results demonstrate that optical properties suitable for photovoltaic applications, in addition to spatial electron-hole separation, are possible but efficient charge transport may be a limiting factor.

Spatial Electron-hole Separation in a One Dimensional Hybrid Organic–Inorganic Lead Iodide

PubMed Central

Savory, Christopher N.; Palgrave, Robert G.; Bronstein, Hugo; Scanlon, David O.

2016-01-01

The increasing efficiency of the inorganic-organic hybrid halides has revolutionised photovoltaic research. Despite this rapid progress, the significant issues of poor stability and toxicity have yet to be suitably overcome. In this article, we use Density Functional Theory to examine (Pb2I6) · (H2DPNDI) · (H2O) · (NMP), an alternative lead-based hybrid inorganic-organic solar absorber based on a photoactive organic cation. Our results demonstrate that optical properties suitable for photovoltaic applications, in addition to spatial electron-hole separation, are possible but efficient charge transport may be a limiting factor. PMID:26858147

Enhanced charge separation of rutile TiO2 nanorods by trapping holes and transferring electrons for efficient cocatalyst-free photocatalytic conversion of CO2 to fuels.

PubMed

Wu, Jing; Lu, Hongwei; Zhang, Xuliang; Raziq, Fazal; Qu, Yang; Jing, Liqiang

2016-04-11

Modification with chloride and phosphate anions, and coupling with carbon nanotubes could effectively trap holes and transfer the electrons of rutile nanorods, respectively, so as to greatly promote photogenerated charge separation, leading to an obviously-improved cocatalyst-free photocatalytic conversion of CO2 to CH4 and CO, along with the positive effects of constructed phosphate bridges.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stolterfoht, Martin; Armin, Ardalan; Pandey, Ajay K.

Photovoltaic performance in relation to charge transport is studied in efficient (7.6%) organic solar cells (PTB7:PC{sub 71}BM). Both electron and hole mobilities are experimentally measured in efficient solar cells using the resistance dependent photovoltage technique, while the inapplicability of classical techniques, such as space charge limited current and photogenerated charge extraction by linearly increasing voltage is discussed. Limits in the short-circuit current originate from optical losses, while charge transport is shown not to be a limiting process. Efficient charge extraction without recombination can be achieved with a mobility of charge carriers much lower than previously expected. The presence of dispersivemore » transport with strongly distributed mobilities in high efficiency solar cells is demonstrated. Reduced non-Langevin recombination is shown to be beneficial for solar cells with imbalanced, low, and dispersive electron and hole mobilities.« less

Ultrafast terahertz snapshots of excitonic Rydberg states and electronic coherence in an organometal halide perovskite

DOE PAGES

Luo, Liang; Men, Long; Liu, Zhaoyu; ...

2017-06-01

How photoexcitations evolve into Coulomb-bound electron and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovoltaics and optoelectronics. Until now, the initial quantum dynamics following photoexcitation remains elusive in the hybrid perovskite system. Furthermore we reveal excitonic Rydberg states with distinct formation pathways by observing the multiple resonant, internal quantum transitions using ultrafast terahertz quasi-particle transport. Nonequilibrium emergent states evolve with a complex co-existence of excitons, carriers and phonons, where a delayed buildup of excitons under on- and off-resonant pumping conditions allows us to distinguish between the loss of electronic coherence and hot statemore » cooling processes. The nearly ~1 ps dephasing time, efficient electron scattering with discrete terahertz phonons and intermediate binding energy of ~13.5 meV in perovskites are distinct from conventional photovoltaic semiconductors. In addition to providing implications for coherent energy conversion, these are potentially relevant to the development of light-harvesting and electron-transport devices.« less

Ultrafast terahertz snapshots of excitonic Rydberg states and electronic coherence in an organometal halide perovskite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Liang; Men, Long; Liu, Zhaoyu

How photoexcitations evolve into Coulomb-bound electron and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovoltaics and optoelectronics. Until now, the initial quantum dynamics following photoexcitation remains elusive in the hybrid perovskite system. Furthermore we reveal excitonic Rydberg states with distinct formation pathways by observing the multiple resonant, internal quantum transitions using ultrafast terahertz quasi-particle transport. Nonequilibrium emergent states evolve with a complex co-existence of excitons, carriers and phonons, where a delayed buildup of excitons under on- and off-resonant pumping conditions allows us to distinguish between the loss of electronic coherence and hot statemore » cooling processes. The nearly ~1 ps dephasing time, efficient electron scattering with discrete terahertz phonons and intermediate binding energy of ~13.5 meV in perovskites are distinct from conventional photovoltaic semiconductors. In addition to providing implications for coherent energy conversion, these are potentially relevant to the development of light-harvesting and electron-transport devices.« less

Ultrathin efficient perovskite solar cells employing a periodic structure of a composite hole conductor for elevated plasmonic light harvesting and hole collection

NASA Astrophysics Data System (ADS)

Long, Mingzhu; Chen, Zefeng; Zhang, Tiankai; Xiao, Yubin; Zeng, Xiaoliang; Chen, Jian; Yan, Keyou; Xu, Jianbin

2016-03-01

We developed a molecule/polymer composite hole transporting material (HTM) with a periodic microstructure for morphology replication of a corrugated Au electrode, which in combination plays a dual role in the optical and electronic enhancement of high performance perovskite solar cells (PSCs). The electro-optics revealed that perovskite couldn't readily extinct the red light even though the thickness increased to 370 nm, but we found that the quasi periodic microstructure composite (PMC) HTM in combination with the conformal Au electrode could promote the absorption through the enhanced cavity effects, leading to comparable absorption even using much thinner perovskite (240 nm). We identified that the cavity was the combination of Fabry-Pérot interferometer and surface plasmonic resonance, with light harvesting enhancement through surface plasmon polariton or waveguide modes that propagate in the plane of the perovskite layer. On the other hand, the PMC HTM increased hole conductivity by one order of magnitude with respect to standard spiro-OMeTAD HTM due to molecular packing and self-assembly, embodying traceable hole mobility and density elevation up to 3 times, and thus the hysteresis was greatly avoided. Owing to dual optical and electronic enhancement, the PMC PSC afforded high efficiency PSC using as thin as 240 nm perovskite layer, delivering a Voc of 1.05 V, Jsc of 22.9 mA cm-2, FF of 0.736, and efficiency amounting to 17.7% PCE, the highest efficiency with ultrathin perovskite layer.We developed a molecule/polymer composite hole transporting material (HTM) with a periodic microstructure for morphology replication of a corrugated Au electrode, which in combination plays a dual role in the optical and electronic enhancement of high performance perovskite solar cells (PSCs). The electro-optics revealed that perovskite couldn't readily extinct the red light even though the thickness increased to 370 nm, but we found that the quasi periodic microstructure composite (PMC) HTM in combination with the conformal Au electrode could promote the absorption through the enhanced cavity effects, leading to comparable absorption even using much thinner perovskite (240 nm). We identified that the cavity was the combination of Fabry-Pérot interferometer and surface plasmonic resonance, with light harvesting enhancement through surface plasmon polariton or waveguide modes that propagate in the plane of the perovskite layer. On the other hand, the PMC HTM increased hole conductivity by one order of magnitude with respect to standard spiro-OMeTAD HTM due to molecular packing and self-assembly, embodying traceable hole mobility and density elevation up to 3 times, and thus the hysteresis was greatly avoided. Owing to dual optical and electronic enhancement, the PMC PSC afforded high efficiency PSC using as thin as 240 nm perovskite layer, delivering a Voc of 1.05 V, Jsc of 22.9 mA cm-2, FF of 0.736, and efficiency amounting to 17.7% PCE, the highest efficiency with ultrathin perovskite layer. Electronic supplementary information (ESI) available: XRD patterns corresponding to the perovskite; AFM images of 3D PMC HTM perovskite solar cells; performance statistics for 3D PMC HTM; ultraviolet photoelectron spectra (UPS) of HTMs on FTO. See DOI: 10.1039/c5nr05042a

Ultrafast exciton dynamics and light-driven H2 evolution in colloidal semiconductor nanorods and Pt-tipped nanorods.

PubMed

Wu, Kaifeng; Zhu, Haiming; Lian, Tianquan

2015-03-17

Colloidal quantum confined one-dimensional (1D) semiconductor nanorods (NRs) and related semiconductor-metal heterostructures are promising new materials for efficient solar-to-fuel conversion because of their unique physical and chemical properties. NRs can simultaneously exhibit quantum confinement effects in the radial direction and bulk like carrier transport in the axial direction. The former implies that concepts well-established in zero-dimensional quantum dots, such as size-tunable energetics and wave function engineering through band alignment in heterostructures, can also be applied to NRs; while the latter endows NRs with fast carrier transport to achieve long distance charge separation. Selective growth of catalytic metallic nanoparticles, such as Pt, at the tips of NRs provides convenient routes to multicomponent heterostructures with photocatalytic capabilities and controllable charge separation distances. The design and optimization of such materials for efficient solar-to-fuel conversion require the understanding of exciton and charge carrier dynamics. In this Account, we summarize our recent studies of ultrafast charge separation and recombination kinetics and their effects on steady-state photocatalytic efficiencies of colloidal CdS and CdSe/CdS NRs and related NR-Pt heterostructures. After a brief introduction of their electronic structure, we discuss exciton dynamics of CdS NRs. By transient absorption and time-resolved photoluminescence decay, it is shown that although the conduction band electrons are long-lived, photogenerated holes in CdS NRs are trapped on an ultrafast time scale (∼0.7 ps), which forms localized excitons due to strong Coulomb interaction in 1D NRs. In quasi-type II CdSe/CdS dot-in-rod NRs, a large valence band offset drives the ultrafast localization of holes to the CdSe core, and the competition between this process and ultrafast hole trapping on a CdS rod leads to three types of exciton species with distinct spatial distributions. The effect of the exciton dynamics on photoreduction reactions is illustrated using methyl viologen (MV(2+)) as a model electron acceptor. The steady-state MV(2+) photoreduction quantum yield of CdSe/CdS dot-in-rod NRs approaches unity under rod excitation, much larger than CdSe QDs and CdSe/CdS core/shell QDs. Detailed time-resolved studies show that in quasi-type II CdSe/CdS NRs and type II ZnSe/CdS NRs strong quantum confinement in the radial direction facilitates fast electron transfer and hole removal, whereas the fast carrier mobility along the axial direction enables long distance charge separation and slow charge recombination, which is essential for efficient MV(2+) photoreduction. The NR/MV(2+) relay system can be coupled to Pt nanoparticles in solution for light-driven H2 generation. Alternatively, Pt-tipped CdS and CdSe/CdS NRs provide fully integrated all inorganic systems for light-driven H2 generation. In CdS-Pt and CdSe/CdS-Pt hetero-NRs, ultrafast hole trapping on the CdS rod surface or in CdSe core enables efficient electron transfer from NRs to Pt tips by suppressing hole and energy transfer. It is shown that the quantum yields of photodriven H2 generation using these heterostructures correlate well with measured hole transfer rates from NRs to sacrificial donors, revealing that hole removal is the key efficiency-limiting step. These findings provide important insights for designing more efficient quantum confined NR and NR-Pt based systems for solar-to-fuel conversion.

Passivated p-type silicon: Hole injection tunable anode material for organic light emission

NASA Astrophysics Data System (ADS)

Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G.

2008-02-01

We find that hole injection can be enhanced simply by selecting a lower-resistivity p-Si anode to match an electron injection enhancement for organic light emitting diodes with ultrathin-SiO2-layer-passivated p-Si anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the p-Si anode is 40Ωcm; for that with n-doped Bphen electron transport layer, it decreases to 5Ωcm. Correspondingly, the maximum power efficiency increases from 0.3to1.9lm /W, even higher than that of an indium tin oxide control device (1.4lm/W). This passivated p-type silicon is a hole injection tunable anode material for OLED.

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

Electron beam induced current in the high injection regime.

PubMed

Haney, Paul M; Yoon, Heayoung P; Koirala, Prakash; Collins, Robert W; Zhitenev, Nikolai B

2015-07-24

Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, which may drive the system into nonlinear regimes. An analytic model is presented which describes the EBIC response when the total electron-hole pair generation rate exceeds the rate at which carriers are extracted by the photovoltaic cell, and charge accumulation and screening occur. The model provides a simple estimate of the onset of the high injection regime in terms of the material resistivity and thickness, and provides a straightforward way to predict the EBIC lineshape in the high injection regime. The model is verified by comparing its predictions to numerical simulations in one- and two-dimensions. Features of the experimental data, such as the magnitude and position of maximum collection efficiency versus electron beam current, are consistent with the three-dimensional model.

Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

PubMed

Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

2016-02-01

A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

Long-range coupling of electron-hole pairs in spatially separated organic donor-acceptor layers

PubMed Central

Nakanotani, Hajime; Furukawa, Taro; Morimoto, Kei; Adachi, Chihaya

2016-01-01

Understanding exciton behavior in organic semiconductor molecules is crucial for the development of organic semiconductor-based excitonic devices such as organic light-emitting diodes and organic solar cells, and the tightly bound electron-hole pair forming an exciton is normally assumed to be localized on an organic semiconducting molecule. We report the observation of long-range coupling of electron-hole pairs in spatially separated electron-donating and electron-accepting molecules across a 10-nanometers-thick spacer layer. We found that the exciton energy can be tuned over 100 megaelectron volts and the fraction of delayed fluorescence can be increased by adjusting the spacer-layer thickness. Furthermore, increasing the spacer-layer thickness produced an organic light-emitting diode with an electroluminescence efficiency nearly eight times higher than that of a device without a spacer layer. Our results demonstrate the first example of a long-range coupled charge-transfer state between electron-donating and electron-accepting molecules in a working device. PMID:26933691

Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices

NASA Astrophysics Data System (ADS)

Han, Tae-Hee; Kwon, Sung-Joo; Seo, Hong-Kyu; Lee, Tae-Woo

2016-03-01

Ultraviolet ozone (UVO) surface treatment of graphene changes its sp2-hybridized carbons to sp3-bonded carbons, and introduces oxygen-containing components. Oxidized graphene has a finite energy band gap, so UVO modification of the surface of a four-layered graphene anode increases its surface ionization potential up to ∼5.2 eV and improves the hole injection efficiency (η) in organic electronic devices by reducing the energy barrier between the graphene anode and overlying organic layers. By controlling the conditions of the UVO treatment, the electrical properties of the graphene can be tuned to improve η. This controlled surface modification of the graphene will provide a way to achieve efficient and stable flexible displays and solid-state lighting.

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

Elimination of resistive losses in large-area LEDs by new diffusion-driven devices

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Kim, Iurii; Suihkonen, Sami; Oksanen, Jani

2017-02-01

High-power operation of conventional GaN-based light-emitting diodes (LEDs) is severely limited by current crowding, which increases the bias voltage of the LED, concentrates light emission close to the p-type contact edge, and aggravates the efficiency droop. Fabricating LEDs on thick n-GaN substrates alleviates current crowding but requires the use of expensive bulk GaN substrates and fairly large n-contacts, which take away a large part of the active region (AR). In this work, we demonstrate through comparative simulations how the recently introduced diffusion-driven charge transport (DDCT) concept can be used to realize lateral heterojunction (LHJ) structures, which eliminate most of the lateral current crowding. Specifically in this work, we analyze how using a single-side graded AR can both facilitate electron and hole diffusion in DDCT and increase the effective AR thickness. Our simulations show that the increased effective AR thickness allows a substantial reduction in the efficiency droop at large currents, and that unlike conventional 2D LEDs, the LHJ structure shows practically no added efficiency loss or differential resistance due to current crowding. Furthermore, as both electrons and holes enter the AR from the same side without any notable potential barriers in the LHJ structure, the LHJ structure shows an additional wall-plug efficiency gain over the conventional structures under comparison. This injection from the same side is expected to be even more interesting in multiple quantum well structures, where carriers typically need to surpass several potential barriers in conventional LEDs before recombining. In addition to simulations, we also demonstrate selective-area growth of a finger structure suitable for operation as an LHJ device with 2µm distance between n- and p-GaN regions.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.

PubMed

Chen, Wei; Li, Kaiwen; Wang, Yao; Feng, Xiyuan; Liao, Zhenwu; Su, Qicong; Lin, Xinnan; He, Zhubing

2017-02-02

Black phosphorus, famous as two-dimensional (2D) materials, shows such excellent properties for optoelectronic devices such as tunable direct band gap, extremely high hole mobility (300-1000 cm 2 /(V s)), and so forth. In this Letter, facile processed black phosphorus quantum dots (BPQDs) were successfully applied to enhance hole extraction at the anode side of the typical p-i-n planar hybrid perovskite solar cells, which remarkably improved the performance of devices with photon conversion efficiency ramping up from 14.10 to 16.69%. Moreover, more detailed investigations by c-AFM, SKPM, SEM, hole-only devices, and photon physics measurements discover further the hole extraction effect and work mechanism of the BPQDs, such as nucleation assistance for the growth of large grain size perovskite crystals, fast hole extraction, more efficient hole transfer, and suppression of energy-loss recombination at the anode interface. This work definitely paves the way for discovering more and more 2D materials with high electronic properties to be used in photovoltaics and optoelectronics.

MgO Nanoparticle Modified Anode for Highly Efficient SnO2-Based Planar Perovskite Solar Cells.

PubMed

Ma, Junjie; Yang, Guang; Qin, Minchao; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Chen, Zhiliang; Guo, Yaxiong; Han, Hongwei; Zhao, Xingzhong; Fang, Guojia

2017-09-01

Reducing the energy loss and retarding the carrier recombination at the interface are crucial to improve the performance of the perovskite solar cell (PSCs). However, little is known about the recombination mechanism at the interface of anode and SnO 2 electron transfer layer (ETL). In this work, an ultrathin wide bandgap dielectric MgO nanolayer is incorporated between SnO 2 :F (FTO) electrode and SnO 2 ETL of planar PSCs, realizing enhanced electron transporting and hole blocking properties. With the use of this electrode modifier, a power conversion efficiency of 18.23% is demonstrated, an 11% increment compared with that without MgO modifier. These improvements are attributed to the better properties of MgO-modified FTO/SnO 2 as compared to FTO/SnO 2 , such as smoother surface, less FTO surface defects due to MgO passivation, and suppressed electron-hole recombinations. Also, MgO nanolayer with lower valance band minimum level played a better role in hole blocking. When FTO is replaced with Sn-doped In 2 O 3 (ITO), a higher power conversion efficiency of 18.82% is demonstrated. As a result, the device with the MgO hole-blocking layer exhibits a remarkable improvement of all J-V parameters. This work presents a new direction to improve the performance of the PSCs based on SnO 2 ETL by transparent conductive electrode surface modification.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Intrachain versus interchain electron transport in poly(fluorene-alt-benzothiadiazole): a quantum-chemical insight.

PubMed

Van Vooren, Antoine; Kim, Ji-Seon; Cornil, Jérôme

2008-05-16

Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) [F8BT], displays very different charge-transport properties for holes versus electrons when comparing annealed and pristine thin films and transport parallel (intrachain) and perpendicular (interchain) to the polymer axes. The present theoretical contribution focuses on the electron-transport properties of F8BT chains and compares the efficiency of intrachain versus interchain transport in the hopping regime. The theoretical results rationalize significantly lowered electron mobility in annealed F8BT thin films and the smaller mobility anisotropy (mu( parallel)/mu( perpendicular)) measured for electrons in aligned films (i.e. 5-7 compared to 10-15 for holes).

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quan, Zhijue, E-mail: quanzhijue@ncu.edu.cn; Wang, Li, E-mail: wl@ncu.edu.cn; Zheng, Changda

2014-11-14

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

Hydroxyethyl cellulose doped with copper(II) phthalocyanine-tetrasulfonic acid tetrasodium salt as an effective dual functional hole-blocking layer for polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Wu, Cheng-Liang; Chen, Yun

2017-07-01

We report a doping method to improve the performance of solution-processed polymer light-emitting diodes (PLEDs). Doping 12 wt% copper(II) phthalocyanine-tetrasulfonated acid tetrasodium salt (TS-CuPc) into hydroxyethyl cellulose (HEC) as a dual functional hole-blocking layer (df-HBL) of multilayer PLED (glass/ITO/PEDOT:PSS/HY-PPV/TS-CuPc-doped HEC/LiF/Al) significantly enhanced maximum luminance, maximum current and power efficiency over that without the df-HBL (10,319 cd/m2, 2.98 cd/A and 1.24 lm/W) to (29,205 cd/m2, 13.27 cd/A and 9.56 lm/W). CV measurements reveal that HEC possesses a powerful hole-blocking capability. Topography and conductivity AFM images show that doping TS-CuPc increases the interfacial contact area and interfacial conductivity, which can overcome the insulating nature of HEC and thus further facilitate electron injection. Enhancements in device performance are attributed to the improved carrier balance and recombination in the presence of df-HBL, confirmed in electron-only and hole-only devices. Moreover, apparently raised open-circuit voltages provide further evidence that enhanced electron injection is indeed realized by the df-HBL. This study demonstrates an effective approach to develop highly efficient PLEDs.

High energy spectrum of spherically accreting black holes

NASA Technical Reports Server (NTRS)

Meszaros, P.; Ostriker, J. P.

1983-01-01

Spherically accreting black holes may sustain strong collisionless shocks, downstream of which the fluid approximation is not valid. The proton-electron Coulomb exchange provides for the downstream matter diffusion into the hole. Energy conversion efficiencies upward of 10-30 percent are obtained, with most of the luminosity in hard X-rays and gamma-rays. The whole spectrum and its application for radio-quiet QSO's and galactic X- and gamma-ray sources are discussed.

Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics.

PubMed

Xie, Fengxian; Choy, Wallace C H; Wang, Chuandao; Li, Xinchen; Zhang, Shaoqing; Hou, Jianhui

2013-04-11

A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-temperature creation of Frenkel defects via hot electron-hole recombination in highly pure NaCl single crystals

NASA Astrophysics Data System (ADS)

Lushchik, A.; Lushchik, Ch.; Nagirnyi, V.; Shablonin, E.; Vasil'chenko, E.

2016-07-01

The creation spectrum of stable F centres (being part of F-H pairs of Frenkel defects) by synchrotron radiation of 7-40 eV has been measured for highly pure NaCl single crystals at 12 K using a highly sensitive luminescent method. It is shown that the efficiency of F centre creation in a closely packed NaCl is low at the decay of anion or cation excitons (7.8-8.4 and 33.4 eV, respectively) or at the recombination of relaxed conduction electrons and valence holes. Only the recombination of nonrelaxed (hot) electrons with holes provides the energy exceeding threshold value EFD, which is sufficient for the creation of Frenkel defects at low temperature.

Dielectric Yagi-Uda nanoantennas driven by electron-hole plasma photoexcitation

NASA Astrophysics Data System (ADS)

Li, S.; Lepeshov, S.; Savelev, R.; Baranov, D.; Belov, P.; Krasnok, A.

2017-11-01

All-dielectric nanophotonics based on high-index dielectric nanoparticles became a powerful platform for modern light science, providing many fascinating applications, including high-efficient nanoantennas and metamaterials. High-index dielectric nanostructures are of a special interest for nonlinear nanophotonics, where they demonstrate special types of optical nonlinearity, such as electron-hole plasma photoexcitation, which are not inherent to plasmonic nanostructures. Here, we propose a novel type of highly tunable all-dielectric Yagi-Uda nanoantennas, consisting of a chain of Si nanoparticles exciting by an electric dipole source, which allow tuning of their radiating properties via electron-hole plasma photoexcitation. We theoretically and numerically demonstrate the tuning of radiation power patterns and the Purcell effect by additional pumping of several boundary nanoparticles with relatively low peak intensities of fs-laser.

Co-modification of amorphous-Ti(IV) hole cocatalyst and Ni(OH)2 electron cocatalyst for enhanced photocatalytic H2-production performance of TiO2

NASA Astrophysics Data System (ADS)

Wang, Ping; Lu, Yanggang; Wang, Xuefei; Yu, Huogen

2017-01-01

Highly efficient TiO2 photocatalysts co-modified by amorphous-Ti(IV) hole cocatalyst and Ni(OH)2 electron cocatalyst (referred to as Ni(OH)2-Ti(IV)/TiO2) were prepared by facile two-step process which was the initial formation of amorphous Ti(IV) on the TiO2 surface via hydrolysis method and the following formation of Ni(OH)2 via precipitation reaction. It was found that the Ni(OH)2-Ti(IV)/TiO2 showed obviously high hydrogen-production performance. When the amount of Ni(OH)2 and Ti(IV) was 1 wt% and 0.1 wt%, respectively, the hydrogen-production rate of the resultant Ni(OH)2-Ti(IV)/TiO2 reached 7280.04 μmol h-1 g-1, which was significantly higher than that of TiO2, Ti(IV)/TiO2 and Ni(OH)2/TiO2 by a factor of 215, 63 and 1.8, respectively. Moreover, it was found that Ni(OH)2-Ti(IV)/TiO2 photocatalyst preserved a steady and highly efficient H2-production performance during repeated tests and also exhibited a high transient photocurrent density. The enhanced hydrogen-production performance of Ni(OH)2-Ti(IV)/TiO2 can be attributed to the synergistic effect of Ti(IV) hole cocatalyst and Ni(OH)2 electron cocatalyst to simultaneously accelerate the interfacial transfer of photogenerated holes and electrons. The present surface modification of dual cocatalysts can be regarded as one of the ideal strategies for the preparation of highly efficient hydrogen-production materials in view of their abundance, low cost and facile method.

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Liu, W.; Butté, R.; Dussaigne, A.; Grandjean, N.; Deveaud, B.; Jacopin, G.

2016-11-01

We study the carrier-density-dependent recombination dynamics in m -plane InGaN/GaN multiple quantum wells in the presence of n -type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bimolecular recombination coefficients. Contrary to the standard electron-hole picture, our results confirm the strong influence of excitons even at room temperature. Indeed, at 300 K, excitons represent up to 63 ± 6% of the photoexcited carriers. In addition, following the Shockley-Read-Hall model, we extract the electron and hole capture rates by deep levels and demonstrate that the increase in the effective lifetime with injected carrier density is due to asymmetric capture rates in presence of an n -type background doping. Thanks to the proper determination of the density-dependent recombination coefficients up to high injection densities, our method provides a way to evaluate the importance of Auger recombination.

Highly efficient red fluorescent organic light-emitting diodes by sorbitol-doped PEDOT:PSS

NASA Astrophysics Data System (ADS)

Zheng, Yan-Qiong; Yu, Jun-Le; Wang, Chao; Yang, Fang; Wei, Bin; Zhang, Jian-Hua; Zeng, Cheng-Hui; Yang, Yang

2018-06-01

This work shows a promising approach to improve device performance by optimizing the electron transport and hole injection layers for tetraphenyldibenzoperiflanthene (DBP):rubrene-based red fluorescent organic light-emitting diodes (OLEDs). We compared the effect of two electron transport layers (ETLs), and found that the rubrene/bathophenanthroline (Bphen) ETL-based OLED showed a much higher external quantum efficiency (EQE) (4.67%) than the Alq3 ETL-based OLED (EQE of 3.08%). The doping ratio of DBP in rubrene was tuned from 1.0 wt% to 4.5 wt%, and the 1.5 wt%-DBP:rubrene-based OLED demonstrated the highest EQE of 5.24% and lowest turn-on voltage of 2.2 V. Atomic force microscopy images indicated that 1.5 wt% DBP-doped rubrene film exhibited a regular strip shape, and this regular surface was favorable to the hole and electron recombination in the emitting layer. Finally, the sorbitol-doped poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was used to further improve the EQE; doping with 6 wt% sorbitol achieved the highest current efficiency of 7.03 cd A‑1 and an EQE of 7.50%. The significantly enhanced performance implies that the hole injection is a limiting factor for DBP:rubrene-based red fluorescent OLEDs.

The effects of temperature on optical properties of InGaN/GaN multiple quantum well light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Yi; Zhu, Youhua; Huang, Jing; Deng, Honghai; Wang, Meiyu; Yin, HaiHong

2017-02-01

The effects of temperature on the optical properties of InGaN/GaN quantum well (QW) light-emitting diodes have been investigated by using the six-by-six K-P method taking into account the temperature dependence of band gaps, lattice constants, and elastic constants. The numerical results indicate that the increase of temperature leads to the decrease of the spontaneous emission rate at the same injection current density due to the redistribution of carrier density and the increase of the non-radiative recombination rate. The product of Fermi-Dirac distribution functions of electron fc n and hole ( 1 - fv U m ) for the transitions between the three lowest conduction subbands (c1-c3) and the top six valence subbands (v1-v6) is larger at the lower temperature, which indicates that there are more electron-hole pairs distributed on the energy levels. It should be noted that the optical matrix elements of the inter-band transitions slightly increase at the higher temperature. In addition, the internal quantum efficiency of the InGaN/GaN QW structure is evidently decreased with increasing temperature.

Enhanced efficiency and air-stability of NiOX-based perovskite solar cells via PCBM electron transport layer modification with Triton X-100.

PubMed

Lee, Kisu; Ryu, Jaehoon; Yu, Haejun; Yun, Juyoung; Lee, Jungsup; Jang, Jyongsik

2017-11-02

We modified phenyl-C61-butyric acid methyl ester (PCBM) for use as a stable, efficient electron transport layer (ETL) in inverted perovskite solar cells (PSCs). PCBM containing a surfactant Triton X-100 acts as the ETL and NiO X nanocrystals act as a hole transport layer (HTL). Atomic force microscopy and scanning electron microscopy images showed that surfactant-modified PCBM (s-PCBM) forms a high-quality, uniform, and dense ETL on the rough perovskite layer. This layer effectively blocks holes and reduces interfacial recombination. Steady-state photoluminescence and electrochemical impedance spectroscopy analyses confirmed that Triton X-100 improved the electron extraction performance of PCBM. When the s-PCBM ETL was used, the average power conversion efficiency increased from 10.76% to 15.68%. This improvement was primarily caused by the increases in the open-circuit voltage and fill factor. s-PCBM-based PSCs also showed good air-stability, retaining 83.8% of their initial performance after 800 h under ambient conditions.

Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites

NASA Astrophysics Data System (ADS)

Blancon, J.-C.; Tsai, H.; Nie, W.; Stoumpos, C. C.; Pedesseau, L.; Katan, C.; Kepenekian, M.; Soe, C. M. M.; Appavoo, K.; Sfeir, M. Y.; Tretiak, S.; Ajayan, P. M.; Kanatzidis, M. G.; Even, J.; Crochet, J. J.; Mohite, A. D.

2017-03-01

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskite layers. These states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.

Simple single-emitting layer hybrid white organic light emitting with high color stability

NASA Astrophysics Data System (ADS)

Nguyen, C.; Lu, Z. H.

2017-10-01

Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

Peripheral Hole Acceptor Moieties on an Organic Dye Improve Dye‐Sensitized Solar Cell Performance

PubMed Central

Hao, Yan; Gabrielsson, Erik; Lohse, Peter William; Yang, Wenxing; Johansson, Erik M. J.; Hagfeldt, Anders

2015-01-01

Investigation of charge transfer dynamics in dye‐sensitized solar cells is of fundamental interest and the control of these dynamics is a key factor for developing more efficient solar cell devices. One possibility for attenuating losses through recombination between injected electrons and oxidized dye molecules is to move the positive charge further away from the metal oxide surface. For this purpose, a metal‐free dye named E6 is developed, in which the chromophore core is tethered to two external triphenylamine (TPA) units. After photoinduced electron injection into TiO2, the remaining hole is rapidly transferred to a peripheral TPA unit. Electron–hole recombination is slowed down by 30% compared to a reference dye without peripheral TPA units. Furthermore, it is found that the added TPA moieties improve the electron blocking effect of the dye, retarding recombination of electrons from TiO2 to the cobalt‐based electrolyte. PMID:27722076

Boosting Photocatalytic Hydrogen Production of a Metal-Organic Framework Decorated with Platinum Nanoparticles: The Platinum Location Matters.

PubMed

Xiao, Juan-Ding; Shang, Qichao; Xiong, Yujie; Zhang, Qun; Luo, Yi; Yu, Shu-Hong; Jiang, Hai-Long

2016-08-01

Improving the efficiency of electron-hole separation and charge-carrier utilization plays a central role in photocatalysis. Herein, Pt nanoparticles of ca. 3 nm are incorporated inside or supported on a representative metal-organic framework (MOF), UiO-66-NH2 , denoted as Pt@UiO-66-NH2 and Pt/UiO-66-NH2 , respectively, for photocatalytic hydrogen production via water splitting. Compared with the pristine MOF, both Pt-decorated MOF nanocomposites exhibit significantly improved yet distinctly different hydrogen-production activities, highlighting that the photocatalytic efficiency strongly correlates with the Pt location relative to the MOF. The Pt@UiO-66-NH2 greatly shortens the electron-transport distance, which favors the electron-hole separation and thereby yields much higher efficiency than Pt/UiO-66-NH2 . The involved mechanism has been further unveiled by means of ultrafast transient absorption and photoluminescence spectroscopy. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers.

PubMed

Fu, Yan; Jiang, Wei; Kim, Daekyoung; Lee, Woosuk; Chae, Heeyeop

2018-05-23

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m -2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.

Controlling charge balance and exciton recombination by bipolar host in single-layer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Tao, Youtian; Wang, Qiang; Ma, Dongge; Yang, Chuluo; Wang, Lixiang; Qin, Jingui; Wang, Fosong

2010-08-01

Highly efficient single-layer organic light-emitting diodes with reduced efficiency roll-off are demonstrated by using a bipolar host material of 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) doped with iridium complexes as the emissive layer. For example, the green single-layer device, employing fac-tris(2-phenylpyridine)iridium Ir(ppy)3 as dopant, shows a peak current efficiency of 45.57 cd A-1, corresponding to external quantum efficiency (EQE) of 12.42%, and still exhibits efficiencies of 45.26 cd A-1 and 40.42 cd A-1 at luminance of 1000 and 10 000 cd m-2, respectively. In addition, the yellow and red single-layer devices, with bis(2-(9,9- diethyl-9H-fluoren-2-yl)-1-phenyl-1H-benzoimidazol-N ,C3)iridium(acetylacetonate) (fbi)2Ir(acac) and bis(1-phenylisoquinolinolato-C2,N)iridium(acetylacetonate) (piq)2Ir(acac) as emitter, also show high EQE of 7.04% and 7.28%, respectively. The transport properties of o-CzOXD film are well investigated by current-voltage measurement, from which both hole and electron mobility are determined. It is found that the o-CzOXD shows appealing bipolar transport character, which is favor for the balanced charge distribution in the whole doped zone. More importantly, the multifunctional role of hole trapping and electron transporting of the iridium complex in o-CzOXD further balances the charge carriers and broadens the recombination zone. As a result, the recombination of electrons and holes is significantly improved and the triplet-triplet annihilation and triplet-polaron quenching processes are effectively suppressed, eventually leading to the high efficiency as well as the reduced efficiency roll-off.

Development of Xi'an-CI package – applying the hole–particle symmetry in multi-reference electronic correlation calculations

NASA Astrophysics Data System (ADS)

Suo, Bingbing; Lei, Yibo; Han, Huixian; Wang, Yubin

2018-04-01

This mini-review introduces our works on the Xi'an-CI (configuration interaction) package using graphical unitary group approach (GUGA). Taking advantage of the hole-particle symmetry in GUGA, the Galfand states used to span the CI space are classified into CI subspaces according to the number of holes and particles, and the coupling coefficients used to calculate Hamiltonian matrix elements could be factorised into the segment factors in the hole, active and external spaces. An efficient multi-reference CI with single and double excitations (MRCISD) algorithm is thus developed that reduces the storage requirement and increases the number of correlated electrons significantly. The hole-particle symmetry also gives rise to a doubly contracted MRCISD approach. Moreover, the internally contracted Gelfand states are defined within the CI subspace arising from the hole-particle symmetry, which makes the implementation of internally contracted MRCISD in the framework of GUGA possible. In addition to MRCISD, the development of multi-reference second-order perturbation theory (MRPT2) also benefits from the hole-particle symmetry. A configuration-based MRPT2 algorithm is proposed and extended to the multi-state n-electron valence-state second-order perturbation theory.

Large dielectric constant, high acceptor density, and deep electron traps in perovskite solar cell material CsGeI 3

DOE PAGES

Ming, Wenmei; Shi, Hongliang; Du, Mao-Hua

2016-01-01

Here we report that many metal halides that contain cations with the ns 2 electronic configuration have recently been discovered as high-performance optoelectronic materials. In particular, solar cells based on lead halide perovskites have shown great promise as evidenced by the rapid increase of the power conversion efficiency. In this paper, we show density functional theory calculations of electronic structure and dielectric and defect properties of CsGeI 3 (a lead-free halide perovskite material). The potential of CsGeI 3 as a solar cell material is assessed based on its intrinsic properties. We find anomalously large Born effective charges and a largemore » static dielectric constant dominated by lattice polarization, which should reduce carrier scattering, trapping, and recombination by screening charged defects and impurities. Defect calculations show that CsGeI 3 is a p-type semiconductor and its hole density can be modified by varying the chemical potentials of the constituent elements. Despite the reduction of long-range Coulomb attraction by strong screening, the iodine vacancy in CsGeI3 is found to be a deep electron trap due to the short-range potential, i.e., strong Ge–Ge covalent bonding, which should limit electron transport efficiency in p-type CsGeI 3. This is in contrast to the shallow iodine vacancies found in several Pb and Sn halide perovskites (e.g., CH 3NH 3PbI 3, CH 3NH 3SnI 3, and CsSnI 3). The low-hole-density CsGeI 3 may be a useful solar absorber material but the presence of the low-energy deep iodine vacancy may significantly reduce the open circuit voltage of the solar cell. Still, on the other hand, CsGeI 3 may be used as an efficient hole transport material in solar cells due to its small hole effective mass, the absence of low-energy deep hole traps, and the favorable band offset with solar absorber materials such as dye molecules and CH 3NH 3PbI 3.« less

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-08-18

We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resultedmore » from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.« less

Mechanism of total electron emission yield reduction using a micro-porous surface

NASA Astrophysics Data System (ADS)

Ye, Ming; Wang, Dan; He, Yongning

2017-03-01

Suppression of the total secondary electron yield (TEY) of metal surfaces is important in many areas such as accelerator, satellite, and Hall thruster. Among TEY suppression techniques, micro-porous surfaces have been demonstrated as an effective method. In this work, we developed an analytical model that is able to obtain the contributions of TEY from both the 1st and 2nd generation secondary electrons (SEs). Calculation results show that the TEY contributed by the bottom of the hole dominates the TEY of the micro-porous surface with the aspect ratio we have chosen. Thus, we developed the following design guidance for the improvement of the TEY suppression efficiency of the micro-porous surface: either lower the TEY of the bottom or guide its SEs to the lateral side of the hole. To verify this idea, we performed the following numerical simulations: a micro-hole with its inner surfaces coated with a low TEY material and a micro-hole with nano-triangular grooves or nano-truncated cone pillars embedded at its bottom. Compared with a usual micro-hole, the proposed hybrid micro/nano structures show improved TEY suppression efficiency as expected from the analytical model. The percentage ratios of the 1st and 2nd generation SEs obtained from the simulation agree well with the predictions of the analytical model. What is more, we also present the results of the emitting angle distribution of SEs which represent remarkable deviation from the usual cosine distribution.

Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P→S Auger relaxation of electrons

NASA Astrophysics Data System (ADS)

Narvaez, Gustavo A.; Bester, Gabriel; Zunger, Alex

2006-08-01

We calculate the P -shell-to- S -shell decay lifetime τ(P→S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P→S)˜1-7ps for dots of different sizes. Our calculated Auger-type P -shell-to- S -shell decay lifetimes τ(P→S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as both electrons and holes are present there is no need for an alternative polaron mechanism.

Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Chen, Jiangshan; Li, Xinglin; Ma, Dongge

2010-05-01

Conduction mechanism in molybdenum trioxide (MoOx)-doped hole- and electron-type organic semiconductors is investigated. The used hole-transporting materials are N ,N'-diphenyl-N ,N'-bis(1-naphthylphenyl)-1, 1'-biphen4, 4'-diamine, 4',4″-tri(N-carbazolyl)triphenylamine, 4, 4'-N,N-dicarbazole-biphenyl, and pentacene and the used electron-transporting material is (8-quinolinolato) aluminum (Alq3). It can be seen that the hole conductivity is significantly enhanced upon MoOx doping, and more importantly, dominant hole current could be realized in a typical electron-transport material Alq3 by doping MoOx. Hence, high efficiency organic light-emitting devices can also be achieved even using MoOx-doped Alq3 film as hole transporting layer. The mechanism investigation indicates that the MoOx plays an important role in the hole transport. It is showed that the MoOx serves as the hole hopping sites, whereas the used organic materials serve as the transport medium and determine the magnitude of transport current. Furthermore, it is found that doping MoOx into the organic materials also reduces the energy and position disorders of the doped organic films, which are well demonstrated by the study on transport characteristics of the doped films at various temperatures.

On the hole accelerator for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

2016-04-11

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al{sub x}Ga{sub 1−x}N heterojunction) with different designs, including the AlN composition in the p-Al{sub x}Ga{sub 1−x}N layer, and the thickness for the p-GaN layer and the p-Al{sub x}Ga{sub 1−x}N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al{sub x}Ga{sub 1−x}N layer increases. Meanwhile, with p-GaN layer or p-Al{sub x}Ga{sub 1−x}N layer thickening, the energy that themore » holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al{sub x}Ga{sub 1−x}N design, and the hole accelerator can effectively increase the hole injection if properly designed.« less

Polymer-Passivated Inorganic Cesium Lead Mixed-Halide Perovskites for Stable and Efficient Solar Cells with High Open-Circuit Voltage over 1.3 V.

PubMed

Zeng, Qingsen; Zhang, Xiaoyu; Feng, Xiaolei; Lu, Siyu; Chen, Zhaolai; Yong, Xue; Redfern, Simon A T; Wei, Haotong; Wang, Haiyu; Shen, Huaizhong; Zhang, Wei; Zheng, Weitao; Zhang, Hao; Tse, John S; Yang, Bai

2018-03-01

Cesium-based trihalide perovskites have been demonstrated as promising light absorbers for photovoltaic applications due to their superb composition stability. However, the large energy losses (E loss ) observed in inorganic perovskite solar cells has become a major hindrance impairing the ultimate efficiency. Here, an effective and reproducible method of modifying the interface between a CsPbI 2 Br absorber and polythiophene hole-acceptor to minimize the E loss is reported. It is demonstrated that polythiophene, deposited on the top of CsPbI 2 Br, can significantly reduce electron-hole recombination within the perovskite, which is due to the electronic passivation of surface defect states. In addition, the interfacial properties are improved by a simple annealing process, leading to significantly reduced energy disorder in polythiophene and enhanced hole-injection into the hole-acceptor. Consequently, one of the highest power conversion efficiency (PCE) of 12.02% from a reverse scan in inorganic mixed-halide perovskite solar cells is obtained. Modifying the perovskite films with annealing polythiophene enables an open-circuit voltage (V OC ) of up to 1.32 V and E loss of down to 0.5 eV, which both are the optimal values reported among cesium-lead mixed-halide perovskite solar cells to date. This method provides a new route to further improve the efficiency of perovskite solar cells by minimizing the E loss . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Basic mechanisms governing solar-cell efficiency

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.; Sah, C. T.

1976-01-01

The efficiency of a solar cell depends on the material parameters appearing in the set of differential equations that describe the transport, recombination, and generation of electrons and holes. This paper describes the many basic mechanisms occurring in semiconductors that can control these material parameters.

Trap-assisted large gain in Cu{sub 2}O/C{sub 60} hybrid ultraviolet/visible photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lan; Xi, Qiaoyue; Gao, Ge

2016-04-18

Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu{sub 2}O/C{sub 60} hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10{sup 4}% under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu{sub 2}O and C{sub 60} are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu{sub 2}O layers, which can trap photogenerated holes. Such trapped holesmore » will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C{sub 60} primarily acts as a light absorption media to provide free holes.« less

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asryan, L. V., E-mail: asryan@vt.edu; Zubov, F. I.; Kryzhanovskaya, N. V.

2016-10-15

The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current andmore » remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.« less

Van Hove singularities and excitonic effects in the optical conductivity of twisted bilayer graphene.

PubMed

Havener, Robin W; Liang, Yufeng; Brown, Lola; Yang, Li; Park, Jiwoong

2014-06-11

We report a systematic study of the optical conductivity of twisted bilayer graphene (tBLG) across a large energy range (1.2-5.6 eV) for various twist angles, combined with first-principles calculations. At previously unexplored high energies, our data show signatures of multiple van Hove singularities (vHSs) in the tBLG bands as well as the nonlinearity of the single layer graphene bands and their electron-hole asymmetry. Our data also suggest that excitonic effects play a vital role in the optical spectra of tBLG. Including electron-hole interactions in first-principles calculations is essential to reproduce the shape of the conductivity spectra, and we find evidence of coherent interactions between the states associated with the multiple vHSs in tBLG.

Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites

DOE PAGES

Blancon, Jean -Christophe Robert; Tsai, Hsinhan; Nie, Wanyi; ...

2017-03-09

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskitemore » layers. Furthermore, these states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.« less

Graded Heterojunction Engineering for Hole-Conductor-Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity.

PubMed

Li, Bo; Zhang, Yanan; Zhang, Luyuan; Yin, Longwei

2017-10-01

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic-organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3- x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3- x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3- x . The CsPbBr x I 3- x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron-hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and Synthesis of Novel Block Copolymers for Efficient Opto-Electronic Applications

NASA Technical Reports Server (NTRS)

Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James; Maaref, Shahin

2002-01-01

It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks may facilitate the charge carrier separation and migration in organic photovoltaic devices due to improved morphology in comparison to polymer blend system. This paper presents preliminary data describing the design and synthesis of a novel Donor-Bridge-Acceptor (D-B-A) block copolymer system for potential high efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene (PPV), the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene (PPV), and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes and facilitates the transport of the holes, the acceptor block stabilizes and facilitates the transport of the electrons, the bridge block is designed to hinder the probability of electron-hole recombination. Thus, improved charge separation and stability are expected with this system. In addition, charge migration toward electrodes may also be facilitated due to the potential nano-phase separated and highly ordered block copolymer ultra-structure.

Induced Infiltration of Hole-Transporting Polymer into Photocatalyst for Staunch Polymer-Metal Oxide Hybrid Solar Cells.

PubMed

Park, Jong Hwan; Jung, Youngsuk; Yang, Yooseong; Shin, Hyun Suk; Kwon, Soonchul

2016-10-05

For efficient solar cells based on organic semiconductors, a good mixture of photoactive materials in the bulk heterojunction on the length scale of several tens of nanometers is an important requirement to prevent exciton recombination. Herein, we demonstrate that nanoporous titanium dioxide inverse opal structures fabricated using a self-assembled monolayer method and with enhanced infiltration of electron-donating polymers is an efficient electron-extracting layer, which enhances the photovoltaic performance. A calcination process generates an inverse opal structure of titanium dioxide (<70 nm of pore diameters) providing three-dimensional (3D) electron transport pathways. Hole-transporting polymers was successfully infiltrated into the pores of the surface-modified titanium dioxide under vacuum conditions at 200 °C. The resulting geometry expands the interfacial area between hole- and electron-transport materials, increasing the thickness of the active layer. The controlled polymer-coating process over titanium dioxide materials enhanced photocurrent of the solar cell device. Density functional theory calculations show improved interfacial adhesion between the self-assembled monolayer-modified surface and polymer molecules, supporting the experimental result of enhanced polymer infiltration into the voids. These results suggest that the 3D inverse opal structure of the surface-modified titanium dioxide can serve as a favorable electron-extracting layer in further enhancing optoelectronic performance based on organic or organic-inorganic hybrid solar cell.

Photocatalytic activity of Ti3+ self-doped dark TiO2 ultrafine nanorods, grey SiO2 nanotwin crystalline, and their composite under visible light

NASA Astrophysics Data System (ADS)

Zhang, Renhui; Yang, Yingchang; Leng, Senlin; Wang, Qing

2018-04-01

Efficient electron-holes separation is of crucial importance for the improvement of photocatalytic activity for photocatalytic reaction. In this work, dark TiO2 (D-TiO2) nanorods, grey SiO2 (G-SiO2) and D-TiO2/G-SiO2 composite with surface defects are synthesized. We report that the efficiency of photo-generated electrons and holes separation is well enhanced by introducing G-SiO2 into D-TiO2 lattice. Using first-principles method, we find that surface defects (O or Si vacancy) can be conducive to improving the optical absorption under visible-light region. Combination of the experimental results, for D-TiO2/G-SiO2 composite, the surface defects of TiO2 nanocrystallines can significantly improve the photocatalytic efficiency.

Unitary limit in crossed Andreev transport

DOE PAGES

Sadovskyy, I. A.; Lesovik, G. B.; Vinokur, V. M.

2015-10-08

One of the most promising approaches for generating spin- and energy-entangled electron pairs is splitting a Cooper pair into the metal through spatially separated terminals. Utilizing hybrid systems with the energy-dependent barriers at the superconductor/normal metal (NS) interfaces, one can achieve a practically 100% efficiency outcome of entangled electrons. We investigate a minimalistic one-dimensional model comprising a superconductor and two metallic leads and derive an expression for an electron-to-hole transmission probability as a measure of splitting efficiency. We find the conditions for achieving 100% efficiency and present analytical results for the differential conductance and differential noise.

The Experimental Study of Novel Pseudospark Hollow Cathode Plasma Electron Gun

NASA Astrophysics Data System (ADS)

Gu, Xiaowei; Meng, Lin; Sun, Yiqin; Yu, Xinhua

2008-11-01

The high-power microwave devices with plasma-filled have unique properties. One of the major problems associated with plasma-filled microwave sources is that ions from the plasma drift toward the gun regions of the tube. This bombardment is particularly dangerous for the gun, where high-energy ion impacts can damage the cathode surface and degrade its electron emission capabilities. One of the techniques investigated to mitigate this issue is to replace the material cathode with plasma cathode. Now, we study the novel electron gun (E-gun) that can be suitable for high power microwave device applications, adopting two forms of discharge channel, 1: a single hole channel, the structure can produce a solid electron beam; 2: porous holes channel, the structure can generate multiple electronic injection which is similar to the annular electron beam.

Optical determination of Shockley-Read-Hall and interface recombination currents in hybrid perovskites

PubMed Central

Sarritzu, Valerio; Sestu, Nicola; Marongiu, Daniela; Chang, Xueqing; Masi, Sofia; Rizzo, Aurora; Colella, Silvia; Quochi, Francesco; Saba, Michele; Mura, Andrea; Bongiovanni, Giovanni

2017-01-01

Metal-halide perovskite solar cells rival the best inorganic solar cells in power conversion efficiency, providing the outlook for efficient, cheap devices. In order for the technology to mature and approach the ideal Shockley-Queissier efficiency, experimental tools are needed to diagnose what processes limit performances, beyond simply measuring electrical characteristics often affected by parasitic effects and difficult to interpret. Here we study the microscopic origin of recombination currents causing photoconversion losses with an all-optical technique, measuring the electron-hole free energy as a function of the exciting light intensity. Our method allows assessing the ideality factor and breaks down the electron-hole recombination current into bulk defect and interface contributions, providing an estimate of the limit photoconversion efficiency, without any real charge current flowing through the device. We identify Shockley-Read-Hall recombination as the main decay process in insulated perovskite layers and quantify the additional performance degradation due to interface recombination in heterojunctions. PMID:28317883

Excited-state relaxation in PbSe quantum dots

NASA Astrophysics Data System (ADS)

An, Joonhee M.; Califano, Marco; Franceschetti, Alberto; Zunger, Alex

2008-04-01

In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ("phonon-bottleneck"). However, excited-state relaxation was observed to be rather fast (⩽1ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb2046Se2117 and Pb260Se249 quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P →S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P →S intraband decay time scale without the need to invoke any exotic relaxation mechanisms.

Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics

DTIC Science & Technology

2017-09-12

Week, Santa Barbara, CA, “Polarization hole engineering in deep- ultraviolet nanowire LEDs”, ATM Sarwar, Santino Carnevale, Thomas Kent, Brelon May...Electronic Materials Conference, Santa Barbara, California, “ Engineering the polarization hole doping of graded nanowire ultraviolet LEDs integrated on...Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering Publication Type: Thesis or Dissertation

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verona, C.; Marinelli, Marco; Verona-Rinati, G.

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb{sub 2}O{sub 5}, WO{sub 3}, V{sub 2}O{sub 5}, and MoO{sub 3}. The low electron affinity Al{sub 2}O{sub 3} was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron acceptingmore » materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 10{sup 13} cm{sup −2}, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 10{sup 13} cm{sup −2} and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.« less

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Trapping in irradiated p +-n-n - silicon sensors at fluences anticipated at the HL-LHC outer tracker

DOE PAGES

Adam, W.

2016-04-22

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 x 10 15 neq/cm 2. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulationmore » assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. Furthermore, the effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.« less

Localised and delocalised optically induced conversion of composite glow peak 5 in LiF:Mg,Ti (TLD-100) to glow peak 4 as a function of postirradiation annealing temperature.

PubMed

Horowitz, Y S; Einav, Y; Biderman, S; Oster, L

2002-01-01

The composite structure of glow peak 5 in LiF:Mg,Ti (TLD-100) has been investigated using optical bleaching by 310 nm (4 eV) light. The glow peak conversion efficiency of peak 5a (Tm = 187 degrees C) to peak 4 traps is very high at a value of 3+/-0.5 (1 SD) whereas the glow peak conversion efficiency of peak 5 (Tm = 205 degrees C) to peak 4 traps is 0.0026+/-0.0012 (1 SD). The high conversion efficiency of peak 5a to peak 4 arises from direct optical ionisation of the electron in the electron-hole pair. leaving behind a singly-trapped hole (peak 4), a direct mechanism, relatively free of competitive mechanisms. Optical ionisation of the 'singly-trapped' electron (peak 5), however, can lead to peak 4 only via multi-stage mechanisms involving charge carrier transport in the valence and conduction bands, a mechanism subject to competitive processes. The conduction/valence band competitive processes lead to the factor of one thousand decrease in the conversion efficiency of peak 5 compared to peak 5a.

Dynamics of photogenerated holes in surface modified α-Fe2O3 photoanodes for solar water splitting

PubMed Central

Barroso, Monica; Mesa, Camilo A.; Pendlebury, Stephanie R.; Cowan, Alexander J.; Hisatomi, Takashi; Sivula, Kevin; Grätzel, Michael; Klug, David R.; Durrant, James R.

2012-01-01

This paper addresses the origin of the decrease in the external electrical bias required for water photoelectrolysis with hematite photoanodes, observed following surface treatments of such electrodes. We consider two alternative surface modifications: a cobalt oxo/hydroxo-based (CoOx) overlayer, reported previously to function as an efficient water oxidation electrocatalyst, and a Ga2O3 overlayer, reported to passivate hematite surface states. Transient absorption studies of these composite electrodes under applied bias showed that the cathodic shift of the photocurrent onset observed after each of the surface modifications is accompanied by a similar cathodic shift of the appearance of long-lived hematite photoholes, due to a retardation of electron/hole recombination. The origin of the slower electron/hole recombination is assigned primarily to enhanced electron depletion in the Fe2O3 for a given applied bias. PMID:22802673

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Mind Star

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well bandmore » profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.« less

Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Tao, Hong; Ma, Zhibin; Yang, Guang; Wang, Haoning; Long, Hao; Zhao, Hongyang; Qin, Pingli; Fang, Guojia

2018-03-01

Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.

Concepts for the material development of phosphorescent organic materials processable from solution and their application in OLEDs

NASA Astrophysics Data System (ADS)

Janietz, S.; Krueger, H.; Thesen, M.; Salert, B.; Wedel, A.

2014-10-01

One example of organic electronics is the application of polymer based light emitting devices (PLEDs). PLEDs are very attractive for large area and fine-pixel displays, lighting and signage. The polymers are more amenable to solution processing by printing techniques which are favourable for low cost production in large areas. With phosphorescent emitters like Ir-complexes higher quantum efficiencies were obtained than with fluorescent systems, especially if multilayer stack systems with separated charge transport and emitting layers were applied in the case of small molecules. Polymers exhibit the ability to integrate all the active components like the hole-, electron-transport and phosphorescent molecules in only one layer. Here, the active components of a phosphorescent system - triplet emitter, hole- and electron transport molecules - can be linked as a side group to a polystyrene main chain. By varying the molecular structures of the side groups as well as the composition of the side chains with respect to the triplet emitter, hole- and electron transport structure, and by blending with suitable glass-forming, so-called small molecules, brightness, efficiency and lifetime of the produced OLEDs can be optimized. By choosing the triplet emitter, such as iridium complexes, different emission colors can be specially set. Different substituted triazine molecules were introduced as side chain into a polystyrene backbone and applied as electron transport material in PLED blend systems. The influence of alkyl chain lengths of the performance will be discussed. For an optimized blend system with a green emitting phosphorescent Ir-complex efficiencies of 60 cd/A and an lifetime improvement of 66.000 h @ 1000 cd/m2 were achieved.

Efficient Molecular Organic Light-Emitting Diodes Based on Silole Derivatives

DTIC Science & Technology

2003-01-01

TPD) and tris-(8-hydroxyquinoline) aluminum ( Alq3 ), commonly used in MOLEDs, have hole and electron mobilities that differ by a factor of ~1000 (~10...and subsequent device degradation. In addition to the widely used electron transporter Alq3 , [8] derivatives of nathrolines, [7] oxadiazoles, [9

Electron-hole pairs generation rate estimation irradiated by isotope Nickel-63 in silicone using GEANT4

NASA Astrophysics Data System (ADS)

Kovalev, I. V.; Sidorov, V. G.; Zelenkov, P. V.; Khoroshko, A. Y.; Lelekov, A. T.

2015-10-01

To optimize parameters of beta-electrical converter of isotope Nickel-63 radiation, model of the distribution of EHP generation rate in semiconductor must be derived. By using Monte-Carlo methods in GEANT4 system with ultra-low energy electron physics models this distribution in silicon calculated and approximated with Gauss function. Maximal efficient isotope layer thickness and maximal energy efficiency of EHP generation were estimated.

A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction Al x Ga1- x N multiple quantum wells

NASA Astrophysics Data System (ADS)

Kojima, Kazunobu; Furusawa, Kentaro; Yamazaki, Yoshiki; Miyake, Hideto; Hiramatsu, Kazumasa; Chichibu, Shigefusa F.

2017-01-01

A strategy for increasing the square of an overlap integral of electron and hole wavefunctions (I 2) in polar c-plane Al x Ga1- x N multiple quantum wells (MQWs) is proposed. By applying quadratic modulation to AlN mole fractions along the c-axis, local bandgap energies and concentrations of immobile charges induced by polarization discontinuity are simultaneously controlled throughout the MQW structure, and optimized band profiles are eventually achieved. The I 2 value can be substantially increased to 94% when the well width (L w) is smaller than 4.0 nm. In addition, I 2 greater than 80% is predicted even for thick MQWs with L w of 10 nm.

Microcomponents manufacturing for precise devices by copper vapor laser

NASA Astrophysics Data System (ADS)

Gorny, Sergey; Nikonchuk, Michail O.; Polyakov, Igor V.

2001-06-01

This paper presents investigation results of drilling of metal microcomponents by copper vapor laser. The laser consists of master oscillator - spatial filter - amplifier system, electronics switching with digital control of laser pulse repetition rate and quantity of pulses, x-y stage with computer control system. Mass of metal, removed by one laser pulse, is measured and defined by means of diameter and depth of holes. Interaction of next pulses on drilled material is discussed. The difference between light absorption and metal evaporation processes is considered for drilling and cutting. Efficiency of drilling is estimated by ratio of evaporation heat and used laser energy. Maximum efficiency of steel cutting is calculated with experimental data of drilling. Applications of copper vapor laser for manufacturing is illustrated by such microcomponents as pin guide plate for printers, stents for cardio surgery, encoded disks for security systems and multiple slit masks for spectrophotometers.

CdS Nanoparticle-Modified α-Fe2O3/TiO2 Nanorod Array Photoanode for Efficient Photoelectrochemical Water Oxidation.

PubMed

Yin, Ruiyang; Liu, Mingyang; Tang, Rui; Yin, Longwei

2017-09-02

In this work, we demonstrate a facile successive ionic layer adsorption and reaction process accompanied by hydrothermal method to synthesize CdS nanoparticle-modified α-Fe 2 O 3 /TiO 2 nanorod array for efficient photoelectrochemical (PEC) water oxidation. By integrating CdS/α-Fe 2 O 3 /TiO 2 ternary system, light absorption ability of the photoanode can be effectively improved with an obviously broadened optical-response to visible light region, greatly facilitates the separation of photogenerated carriers, giving rise to the enhancement of PEC water oxidation performance. Importantly, for the designed abnormal type-II heterostructure between Fe 2 O 3 /TiO 2 , the conduction band position of Fe 2 O 3 is higher than that of TiO 2 , the photogenerated electrons from Fe 2 O 3 will rapidly recombine with the photogenerated holes from TiO 2 , thus leads to an efficient separation of photogenerated electrons from Fe 2 O 3 /holes from TiO 2 at the Fe 2 O 3 /TiO 2 interface, greatly improving the separation efficiency of photogenerated holes within Fe 2 O 3 and enhances the photogenerated electron injection efficiency in TiO 2 . Working as the photoanodes of PEC water oxidation, CdS/α-Fe 2 O 3 /TiO 2 heterostucture electrode exhibits improved photocurrent density of 0.62 mA cm - 2 at 1.23 V vs. reversible hydrogen electrode (RHE) in alkaline electrolyte, with an obviously negatively shifted onset potential of 80 mV. This work provides promising methods to enhance the PEC water oxidation performance of the TiO 2 -based heterostructure photoanodes.

Rational Strategies for Efficient Perovskite Solar Cells.

PubMed

Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

2016-03-15

A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on the cell architecture and perovskite composition. In this Account, we will describe what we do with major aspects including (1) the film morphology through the development of intermediate chemistry retarding the rapid reaction between methylammonium or formamidinium iodide and lead halide (PbI2) for improved perovskite film formation; (2) the phase stability and band gap tuning of the perovskite layer through the materials engineering; (3) the development of electron and hole transporting materials for carrier-selective contacting layers; and (4) the adoption of p-i-n and n-i-p architectures depending on the position of the electron or hole conducting layer in front of incident light. Finally, we will summarize the recent incredible achievements in PSCs, and finally provide challenges facing the future development and commercialization of PSCs.

Replacement of Biphenyl by Bipyridine Enabling Powerful Hole Transport Materials for Efficient Perovskite Solar Cells.

PubMed

Wu, Fei; Shan, Yahan; Qiao, Jianhui; Zhong, Cheng; Wang, Rui; Song, Qunliang; Zhu, Linna

2017-10-09

Here, 2,2'- and 3,3'-bipyridine are introduced for the first time as the core structure to get two new hole transport materials (HTMs), namely F22 and F33. The electron-withdrawing nature of bipyridine lowers the HOMO level of the new compounds and enhances the open-circuit voltage of perovskite solar cells. Especially for F33, the better planarity leads to better conjugation in the whole molecule and the molecular interaction is enhanced. Hole-mobility tests, steady-state photoluminescence (PL) spectra as well as time-resolved PL decay results demonstrate that the new HTMs exhibit good hole extraction and hole-transporting property. Impressive power conversion efficiencies of 17.71 and 18.48 % are achieved in conventional planar perovskite (CH 3 NH 3 PbI 3-x Cl x ) solar cells containing F22 and F33 as HTMs, respectively. As far as we know, this is the first report on bypiridine-based HTMs with leading efficiencies, and the design motif in this work opens a new way for devising HTMs in the future. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fourier-domain Mobility Spectrum Analysis (FMSA) for Characterizing Semiconductors with Multi-Electron/Hole Species

NASA Astrophysics Data System (ADS)

Cui, Boya; Kielb, Edward; Luo, Jiajun; Tang, Yang; Grayson, Matthew

Superlattices and narrow gap semiconductors often host multiple conducting species, such as electrons and holes, requiring a mobility spectral analysis (MSA) method to separate contributions to the conductivity. Here, a least-squares MSA method is introduced: the QR-algorithm Fourier-domain MSA (FMSA). Like other MSA methods, the FMSA sorts the conductivity contributions of different carrier species from magnetotransport measurements, arriving at a best fit to the experimentally measured longitudinal and Hall conductivities σxx and σxy, respectively. This method distinguishes itself from other methods by using the so-called QR-algorithm of linear algebra to achieve rapid convergence of the mobility spectrum as the solution to an eigenvalue problem, and by alternately solving this problem in both the mobility domain and its Fourier reciprocal-space. The result accurately fits a mobility range spanning nearly four orders of magnitude (μ = 300 to 1,000,000 cm2/V .s). This method resolves the mobility spectra as well as, or better than, competing MSA methods while also achieving high computational efficiency, requiring less than 30 second on average to converge to a solution on a standard desktop computer. Acknowledgement: Funded by AFOSR FA9550-15-1-0377 and AFOSR FA9550-15-1-0247.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Structural control of mixed ionic and electronic transport in conducting polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.

Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. Wemore » quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. As a result, these findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.« less

Structural control of mixed ionic and electronic transport in conducting polymers

DOE PAGES

Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.; ...

2016-04-19

Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. Wemore » quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. As a result, these findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.« less

Efficient generation and transportation of energetic electrons in a carbon nanotube array target

NASA Astrophysics Data System (ADS)

Ji, Yanling; Jiang, Gang; Wu, Weidong; Wang, Chaoyang; Gu, Yuqiu; Tang, Yongjian

2010-01-01

Laser-driven energetic electron propagation in a carbon nanotube-array target is investigated using two-dimensional particle-in-cell simulations. Energetic electrons are efficiently generated when the array is irradiated by a short intense laser pulse. Confined and guided transportation of energetic electrons in the array is achieved by exploiting strong transient electromagnetic fields created at the wall surfaces of nanotubes. The underlying mechanisms are discussed in detail. Our investigation shows that the laser energy can be transferred more effectively to the target electrons in the array than that of in the flat foil due to the hole structures in the array.

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

NASA Astrophysics Data System (ADS)

Jin, Kui; Hu, Wei; Zhu, Beiyi; Kim, Dohun; Yuan, Jie; Sun, Yujie; Xiang, Tao; Fuhrer, Michael S.; Takeuchi, Ichiro; Greene, Richard. L.

2016-05-01

The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.

Stable Graphene-Two-Dimensional Multiphase Perovskite Heterostructure Phototransistors with High Gain.

PubMed

Shao, Yuchuan; Liu, Ye; Chen, Xiaolong; Chen, Chen; Sarpkaya, Ibrahim; Chen, Zhaolai; Fang, Yanjun; Kong, Jaemin; Watanabe, Kenji; Taniguchi, Takashi; Taylor, André; Huang, Jinsong; Xia, Fengnian

2017-12-13

Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered by a 2D multiphase perovskite heterostructure, which was realized using a newly developed two-step ligand exchange method. In this phototransistor, the multiple phases with varying bandgap in 2D perovskite thin films are aligned for the efficient electron-hole pair separation, leading to a high responsivity of ∼10 5 A W -1 at 532 nm. Moreover, the designed phase alignment method aggregates more hydrophobic butylammonium cations close to the upper surface of the 2D perovskite thin film, preventing the permeation of moisture and enhancing the device stability dramatically. In addition, faster photoresponse and smaller 1/f noise observed in the 2D perovskite phototransistors indicate a smaller density of deep hole traps in the 2D perovskite thin film compared with their 3D counterparts. These desirable properties not only improve the performance of the phototransistor, but also provide a new direction for the future enhancement of the efficiency of 2D perovskite photovoltaics.

Directional charge transfer mediated by mid-gap states: A transient absorption spectroscopy study of CdSe quantum dot/β-Pb 0.33V 2O 5 heterostructures

DOE PAGES

Milleville, Christopher C.; Pelcher, Kate E.; Sfeir, Matthew Y.; ...

2016-02-15

For solar energy conversion, not only must a semiconductor absorb incident solar radiation efficiently but also its photoexcited electron—hole pairs must further be separated and transported across interfaces. Charge transfer across interfaces requires consideration of both thermodynamic driving forces as well as the competing kinetics of multiple possible transfer, cooling, and recombination pathways. In this work, we demonstrate a novel strategy for extracting holes from photoexcited CdSe quantum dots (QDs) based on interfacing with β-Pb 0.33V 2O 5 nanowires that have strategically positioned midgap states derived from the intercalating Pb 2+ ions. Unlike midgap states derived from defects or dopants,more » the states utilized here are derived from the intrinsic crystal structure and are thus homogeneously distributed across the material. CdSe/β-Pb 0.33V 2O 5 heterostructures were assembled using two distinct methods: successive ionic layer adsorption and reaction (SILAR) and linker-assisted assembly (LAA). Transient absorption spectroscopy measurements indicate that, for both types of heterostructures, photoexcitation of CdSe QDs was followed by the transfer of electrons to the conduction band of β-Pb 0.33V 2O 5 nanowires and holes to the midgap states of β-Pb 0.33V 2O 5 nanowires. Holes were transferred on time scales less than 1 ps, whereas electrons were transferred more slowly on time scales of ~2 ps. In contrast, for analogous heterostructures consisting of CdSe QDs interfaced with V 2O 5 nanowires (wherein midgap states are absent), only electron transfer was observed. Interestingly, electron transfer was readily achieved for CdSe QDs interfaced with V 2O 5 nanowires by the SILAR method; however, for interfaces incorporating molecular linkers, electron transfer was observed only upon excitation at energies substantially greater than the bandgap absorption threshold of CdSe. Furthermore, transient absorbance decay traces reveal longer excited-state lifetimes (1–3 μs) for CdSe/β-Pb 0.33V 2O 5 heterostructures relative to bare β-Pb 0.33V 2O 5 nanowires (0.2 to 0.6 μs); the difference is attributed to surface passivation of intrinsic surface defects in β-Pb 0.33V 2O 5 upon interfacing with CdSe.« less

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

The efficient n-doping of [6,6]-phenyl C61-butyric acid methyl ester by leuco-crystal violet to enhance the performance of inverted organic solar cells

NASA Astrophysics Data System (ADS)

Chen, Li; Zhao, Wei; Cao, Huan; Shi, Zhihua; Zhang, Jidong; Qin, Dashan

2018-02-01

Inverted organic solar cells (OSCs) have been fabricated using the photoactive blend thin films based on regioregular poly(3-hexylthiophene) (P3HT), [6,6]-phenyl C61-butyric acid methyl ester (PCBM), and leuco-crystal violet (LCV). It was found that the LCV as an efficient n-dopant could significantly increase intrinsic electron concentration of PCBM zone. The electron mobility of P3HT:PCBM:LCV blend thin film was measured 1.75 times as high as that of P3HT:PCBM blend thin film, as a result of LCV-induced trap filling in the bandgap of PCBM. The power conversion efficiency for the inverted device using the photoactive layer of P3HT:PCBM:LCV could be 1.22 times as high as that for the inverted device using the conventional photoactive layer of P3HT:PCBM, mostly because (1) the higher electron mobility could enhance the exciton dissociation and thereby short-circuit current density in the former relative to the latter; (2) the increase in the electron concentration of PCBM zone in P3HT:PCBM:LCV blend thin film may help blocking holes diffusion towards cathode, improving the hole collection efficiency and thereby fill factor of device. We provide a new insight on optimizing the electron-conducting property of bulk-heterojunction photoactive thin film, useful for pushing forward inverted OSCs towards the cost-effective commercialization.

Efficiency of solution-processed multilayer polymer light-emitting diodes using charge blocking layers

NASA Astrophysics Data System (ADS)

Kasparek, Christian; Rörich, Irina; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-01-01

By blending semiconducting polymers with the cross-linkable matrix ethoxylated-(4)-bisphenol-a-dimethacrylate (SR540), an insoluble layer is acquired after UV-illumination. Following this approach, a trilayer polymer light-emitting diode (PLED) consisting of a blend of poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) and SR540 as an electron-blocking layer, Super Yellow-Poly(p-phenylene vinylene) (SY-PPV) blended with SR540 as an emissive layer, and poly(9,9-di-n-octylfluorenyl-2,7-diyl) as a hole-blocking layer is fabricated from solution. The trilayer PLED shows a 23% increase in efficiency at low voltage as compared to a single layer SY-PPV PLED. However, at higher voltage, the advantage in current efficiency gradually decreases. A combined experimental and modelling study shows that the increased efficiency is not only due to the elimination of exciton quenching at the electrodes but also due to suppressed nonradiative trap-assisted recombination due to carrier confinement. At high voltages, holes can overcome the hole-blocking barrier, which explains the efficiency roll-off.

A Many-Body Formalism of ΔSCF Approach for Simulating X-Ray Spectra from First-Principles

NASA Astrophysics Data System (ADS)

Liang, Yufeng; Vinson, John; Pemmaraju, Sri; Drisdell, Walter; Shirley, Eric; Prendegast, David

Accurately reproducing X-ray spectral fingerprints for materials characterization relies heavily on how to correctly model the many-electron response to the generation of an X-ray core hole. In this talk, we present a novel first-principles theory for simulating X-ray spectra that is based on many-electron wavefunctions. The proposed theory go beyond the electron-hole correlations within the Bethe-Saltpeter Equation and consider higher-order vertex corrections up to the level of Mahan-Noziéres-De Dominicis (MND) theory. An efficient algorithm is invented to incorporate these many-electron processes by using linear algebra rather than iterating over all Feynman diag United States Department of Energy under Contact No. DE-AC02-05CH11231, No. DE-SC0004993.

Efficient Vacuum-Deposited Ternary Organic Solar Cells with Broad Absorption, Energy Transfer, and Enhanced Hole Mobility.

PubMed

Shim, Hyun-Sub; Moon, Chang-Ki; Kim, Jihun; Wang, Chun-Kai; Sim, Bomi; Lin, Francis; Wong, Ken-Tsung; Seo, Yongsok; Kim, Jang-Joo

2016-01-20

The use of multiple donors in an active layer is an effective way to boost the efficiency of organic solar cells by broadening their absorption window. Here, we report an efficient vacuum-deposited ternary organic photovoltaic (OPV) using two donors, 2-((2-(5-(4-(diphenylamino)phenyl)thieno[3,2-b]thiophen-2-yl)thiazol-5-yl)methylene)malononitrile (DTTz) for visible absorption and 2-((7-(5-(dip-tolylamino)thiophen-2-yl)benzo[c]-[1,2,5]thiadiazol-4-yl)methylene)malononitrile (DTDCTB) for near-infrared absorption, codeposited with C70 in the ternary layer. The ternary device achieved a power conversion efficiency of 8.02%, which is 23% higher than that of binary OPVs. This enhancement is the result of incorporating two donors with complementary absorption covering wavelengths of 350 to 900 nm with higher hole mobility in the ternary layer than that of binary layers consisting of one donor and C70, combined with energy transfer from the donor with lower hole mobility (DTTz) to that with higher mobility (DTDCTB). This structure fulfills all the requirements for efficient ternary OPVs.

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

PubMed Central

Bae, Wan Ki; Park, Young-Shin; Lim, Jaehoon; Lee, Donggu; Padilha, Lazaro A.; McDaniel, Hunter; Robel, Istvan; Lee, Changhee; Pietryga, Jeffrey M.; Klimov, Victor I.

2013-01-01

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection. PMID:24157692

Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

2016-10-01

The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

Facile fabrication of BiVO4 nanofilms with controlled pore size and their photoelectrochemical performances

NASA Astrophysics Data System (ADS)

Feng, Chenchen; Jiao, Zhengbo; Li, Shaopeng; Zhang, Yan; Bi, Yingpu

2015-12-01

We demonstrate a facile method for the rational fabrication of pore-size controlled nanoporous BiVO4 photoanodes, and confirmed that the optimum pore-size distributions could effectively absorb visible light through light diffraction and confinement functions. Furthermore, in situ X-ray photoelectron spectroscopy (XPS) reveals more efficient photoexcited electron-hole separation than conventional particle films, induced by light confinement and rapid charge transfer in the inter-crossed worm-like structures.We demonstrate a facile method for the rational fabrication of pore-size controlled nanoporous BiVO4 photoanodes, and confirmed that the optimum pore-size distributions could effectively absorb visible light through light diffraction and confinement functions. Furthermore, in situ X-ray photoelectron spectroscopy (XPS) reveals more efficient photoexcited electron-hole separation than conventional particle films, induced by light confinement and rapid charge transfer in the inter-crossed worm-like structures. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06584d

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jonghwan; Jin, Chenhao; Chen, Bin

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE PAGES

Kim, Jonghwan; Jin, Chenhao; Chen, Bin; ...

2017-07-26

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Enhancing photoluminescence yields in lead halide perovskites by photon recycling and light out-coupling.

PubMed

Richter, Johannes M; Abdi-Jalebi, Mojtaba; Sadhanala, Aditya; Tabachnyk, Maxim; Rivett, Jasmine P H; Pazos-Outón, Luis M; Gödel, Karl C; Price, Michael; Deschler, Felix; Friend, Richard H

2016-12-23

In lead halide perovskite solar cells, there is at least one recycling event of electron-hole pair to photon to electron-hole pair at open circuit under solar illumination. This can lead to a significant reduction in the external photoluminescence yield from the internal yield. Here we show that, for an internal yield of 70%, we measure external yields as low as 15% in planar films, where light out-coupling is inefficient, but observe values as high as 57% in films on textured substrates that enhance out-coupling. We analyse in detail how externally measured rate constants and photoluminescence efficiencies relate to internal recombination processes under photon recycling. For this, we study the photo-excited carrier dynamics and use a rate equation to relate radiative and non-radiative recombination events to measured photoluminescence efficiencies. We conclude that the use of textured active layers has the ability to improve power conversion efficiencies for both LEDs and solar cells.

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Hallmarks of the Mott-metal crossover in the hole-doped pseudospin-1/2 Mott insulator Sr 2IrO 4

DOE PAGES

Cao, Yue; Wang, Qiang; Waugh, Justin A.; ...

2016-04-22

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr 2 IrO 4 . The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observedmore » in doped cuprates - pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material's proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.« less

Two-dimensional computer simulation of EMVJ and grating solar cells under AMO illumination

NASA Technical Reports Server (NTRS)

Gray, J. L.; Schwartz, R. J.

1984-01-01

A computer program, SCAP2D (Solar Cell Analysis Program in 2-Dimensions), is used to evaluate the Etched Multiple Vertical Junction (EMVJ) and grating solar cells. The aim is to demonstrate how SCAP2D can be used to evaluate cell designs. The cell designs studied are by no means optimal designs. The SCAP2D program solves the three coupled, nonlinear partial differential equations, Poisson's Equation and the hole and electron continuity equations, simultaneously in two-dimensions using finite differences to discretize the equations and Newton's Method to linearize them. The variables solved for are the electrostatic potential and the hole and electron concentrations. Each linear system of equations is solved directly by Gaussian Elimination. Convergence of the Newton Iteration is assumed when the largest correction to the electrostatic potential or hole or electron quasi-potential is less than some predetermined error. A typical problem involves 2000 nodes with a Jacobi matrix of order 6000 and a bandwidth of 243.

Unravelling the Effects of Grain Boundary and Chemical Doping on Electron–Hole Recombination in CH 3NH 3PbI 3 Perovskite by Time-Domain Atomistic Simulation

DOE PAGES

Long, Run; Liu, Jin; Prezhdo, Oleg V.

2016-03-01

Advancing organohalide perovskite solar cells requires understanding of carrier dynamics. Electron–hole recombination is a particularly important process because it constitutes a major pathway of energy and current losses. Grain boundaries (GBs) are common in methylammonium lead iodine CH 3NH 3PbI 3 (MAPbI 3) perovskite polycrystalline films. First-principles calculations have suggested that GBs have little effect on the recombination; however, experiments defy this prediction. Using nonadiabatic (NA) molecular dynamics combined with time-domain density functional theory, we show that GBs notably accelerate the electron–hole recombination in MAPbI3. First, GBs enhance the electron–phonon NA coupling by localizing and contributing to the electron andmore » hole wave functions and by creating additional phonon modes that couple to the electronic degrees of freedom. Second, GBs decrease the MAPbI3 bandgap, reducing the number of vibrational quanta needed to accommodate the electronic energy loss. Third, the phonon-induced loss of electronic coherence remains largely unchanged and not accelerated, as one may expect from increased electron–phonon coupling. Further, replacing iodines by chlorines at GBs reduces the electron–hole recombination. By pushing the highest occupied molecular orbital (HOMO) density away from the boundary, chlorines restore the NA coupling close to the value observed in pristine MAPbI 3. By introducing higher-frequency phonons and increasing fluctuation of the electronic gap, chlorines shorten electronic coherence. Both factors compete successfully with the reduced bandgap relative to pristine MAPbI 3 and favor long excited-state lifetimes. The simulations show excellent agreement with experiment and characterize how GBs and chlorine dopants affect electron–hole recombination in perovskite solar cells. In conclusion, the simulations suggest a route to increased photon-to-electron conversion efficiencies through rational GB passivation.« less

Simulation of Current Transport in Polycrystalline CdTe Solar Cells

NASA Astrophysics Data System (ADS)

Troni, F.; Menozzi, R.; Colegrove, E.; Buurma, C.

2013-11-01

Polycrystalline thin-film CdTe solar cells have demonstrated laboratory efficiency exceeding 17% and are nowadays a commercial technology (albeit with somewhat lower efficiencies). The standard process features a poorly understood recrystallization step, obtained by annealing with a source of chlorine. This study uses two-dimensional numerical modeling to investigate current transport inside the polycrystalline CdTe absorber with and without recrystallization effects [increase of grain size and donor ClTe states at grain boundaries (GBs)]. Solving the Poisson equation and the drift-diffusion model for transport with Fermi statistics, while treating the optical problem by the one-dimensional transfer matrix method and complex refractive indexes, this study shows that: (i) in a columnar absorber (i.e., one where only vertical GBs exist), the presence of ClTe donor traps at GBs results in a dip in the band profiles that effectively serves as an electron collector, significantly increasing the short-circuit current and efficiency compared with nondecorated GBs; (ii) while the same dip acts as a hole barrier and thus can be expected to block holes from flowing when horizontal GBs are present, under illuminated conditions electron collection at GBs reduces the dip enough to allow substantial hole flow, and the cell performance is only moderately affected.

Photoinduced electron transfer and persistent spectral hole-burning in natural emerald.

PubMed

Riesen, Hans

2011-06-02

Wavelength-selective excited-state lifetime measurements and absorption, luminescence, and hole-burning spectra of a natural African emerald crystal are reported. The (2)E excited-state lifetime displays an extreme wavelength dependence, varying from 190 to 37 μs within 1.8 nm of the R(1)-line. Overall, the excited state is strongly quenched, in comparison to laboratory-created emerald (τ=1.3 ms), with an average quenching rate of ∼6 × 10(3) s(-1) at 2.5 K. This quenching is attributed to photoinduced electron transfer caused by a relatively high concentration of Fe(2+) ions. The forward electron-transfer rate, k(f), from the nearest possible Fe(2+) sites at around 5 Å is estimated to be ∼20 × 10(3) s(-1) at 2.5 K. The photoreductive quenching of the excited Cr(3+) ions by Fe(2+) is followed by rapid electron back-transfer in the ground state upon deactivation. The exchange interaction based quenching can be modeled by assuming a random quencher distribution within the possible Fe(2+) sites with the forward electron-transfer rate, k(f), given as a function of acceptor-donor separation R by exp[(R(f)-R)/a(f)]; R(f) and a(f) values of 13.5 and 2.7 Å are obtained at 2.5 K. The electron transfer/back-transfer reorganizes the local crystal lattice, occasionally leading to a minor variation of the short-range structure around the Cr(3+) ions. This provides a mechanism for spectral hole-burning for which a moderately high quantum efficiency of about ∼0.005% is observed. Spectral holes are subject to spontaneous hole-filling and spectral diffusion, and both effects can be quantified within the standard two-level systems for non-photochemical hole-burning. Importantly, the absorbance increases on both sides of broad spectral holes, and isosbestic points are observed, in accord with the expected distribution of the "photoproduct" in a non-photochemical hole-burning process. © 2011 American Chemical Society

The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

2018-01-01

Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

Electron holes in inhomogeneous magnetic field: Electron heating and electron hole evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasko, I. Y.; Space Research Institute of Russian Academy of Science, Moscow; Agapitov, O. V.

Electron holes are electrostatic non-linear structures widely observed in the space plasma. In the present paper, we analyze the process of energy exchange between electrons trapped within electron hole, untrapped electrons, and an electron hole propagating in a weakly inhomogeneous magnetic field. We show that as the electron hole propagates into the region with stronger magnetic field, trapped electrons are heated due to the conservation of the first adiabatic invariant. At the same time, the electron hole amplitude may increase or decrease in dependence on properties of distribution functions of trapped and untrapped resonant electrons. The energy gain of trappedmore » electrons is due to the energy losses of untrapped electrons and/or decrease of the electron hole energy. We stress that taking into account the energy exchange with untrapped electrons increases the lifetime of electron holes in inhomogeneous magnetic field. We illustrate the suggested mechanism for small-amplitude Schamel's [Phys. Scr. T2, 228–237 (1982)] electron holes and show that during propagation along a positive magnetic field gradient their amplitude should grow. Neglect of the energy exchange with untrapped electrons would result in the electron hole dissipation with only modest heating factor of trapped electrons. The suggested mechanism may contribute to generation of suprathermal electron fluxes in the space plasma.« less

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Qin, Minchao; Tao, Hong

2015-03-23

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and themore » formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.« less

Influence of heat treatment on hole transfer dynamics in core-shell quantum dot/organic hole conductor hybrid films

NASA Astrophysics Data System (ADS)

Sun, Mingye; Zheng, Youjin; Zhang, Lei; Zhao, Liping; Zhang, Bing

2017-08-01

The influence of heat treatment on hole transfer (HT) processes from the CdSe/ZnS and CdSe/CdS/ZnS quantum dots (QDs) to 4,4‧,4″-Tris(carbazol-9-yl)-triphenylamine (TCTA) in QD/TCTA hybrid films has been researched with time-resolved photoluminescence (PL) spectroscopy. The PL dynamic results demonstrated a heat-treatment-temperature-dependent HT process from the core-shell CdSe QDs to TCTA. The HT rates and efficiencies can be effectively increased due to reduced distance between core-shell CdSe QDs and TCTA after heat treatment. The CdS shell exhibited a more obvious effect on HT from the core-shell CdSe QDs to TCTA than on electron transfer to TiO2, due to higher barrier for holes to tunnel through CdS shell and larger effective mass of holes in CdS than electrons. These results indicate that heat treatment would be an effective means to further optimize solid-state QD sensitized solar cells and rational design of CdS shell is significant.

Electron and fluorescence spectra of a water molecule irradiated by an x-ray free-electron laser pulse

NASA Astrophysics Data System (ADS)

Schäfer, Julia M.; Inhester, Ludger; Son, Sang-Kil; Fink, Reinhold F.; Santra, Robin

2018-05-01

With the highly intense x-ray light generated by x-ray free-electron lasers (XFELs), molecular samples can be ionized many times in a single pulse. Here we report on a computational study of molecular spectroscopy at the high x-ray intensity provided by XFELs. Calculated photoelectron, Auger electron, and x-ray fluorescence spectra are presented for a single water molecule that reaches many electronic hole configurations through repeated ionization steps. The rich details shown in the spectra depend on the x-ray pulse parameters in a nonintuitive way. We discuss how the observed trends can be explained by the competition of microscopic electronic transition processes. A detailed comparison between spectra calculated within the independent-atom model and within the molecular-orbital framework highlights the chemical sensitivity of the spectral lines of multiple-hole configurations. Our results demonstrate how x-ray multiphoton ionization-related effects such as charge-rearrangement-enhanced x-ray ionization of molecules and frustrated absorption manifest themselves in the electron and fluorescence spectra.

A predictive theory of charge separation in organic photovoltaics interfaces

NASA Astrophysics Data System (ADS)

Troisi, Alessandro; Liu, Tao; Caruso, Domenico; Cheung, David L.; McMahon, David P.

2012-09-01

The key process in organic photovoltaics cells is the separation of an exciton, close to the donor/acceptor interface into a free hole (in the donor) and a free electron (in the acceptor). In an efficient solar cell, the majority of absorbed photons generate such hole-electron pairs but it is not clear why such a charge separation process is so efficient in some blends (for example in the blend formed by poly(3- hexylthiophene) (P3HT) and a C60 derivative (PCBM)) and how can one design better OPV materials. The electronic and geometric structure of the prototypical polymer:fullerene interface (P3HT:PCBM) is investigated theoretically using a combination of classical and quantum simulation methods. It is shown that the electronic structure of P3HT in contact with PCBM is significantly altered compared to bulk P3HT. Due to the additional free volume of the interface, P3HT chains close to PCBM are more disordered and, consequently, they are characterized by an increased band gap. Excitons and holes are therefore repelled by the interface. This provides a possible explanation of the low recombination efficiency and supports the direct formation of "quasi-free" charge separated species at the interface. This idea is further explored here by using a more general system-independent model Hamiltonian. The long range exciton dissociation rate is computed as a function of the exciton distance from the interface and the average dissociation distance is evaluated by comparing this rate with the exciton migration rate with a kinetic model. The phenomenological model shows that also in a generic interface the direct formation if quasi-free charges is extremely likely.

Construction of an all-solid-state artificial Z-scheme system consisting of Bi2WO6/Au/CdS nanostructure for photocatalytic CO2 reduction into renewable hydrocarbon fuel.

PubMed

Wang, Meng; Han, Qiutong; Li, Liang; Tang, Lanqin; Li, Haijin; Zhou, Yong; Zou, Zhigang

2017-07-07

An all-solid-state Bi 2 WO 6 /Au/CdS Z-scheme system was constructed for the photocatalytic reduction of CO 2 into methane in the presence of water vapor. This Z-scheme consists of ultrathin Bi 2 WO 6 nanoplates and CdS nanoparticles as photocatalysts, and a Au nanoparticle as a solid electron mediator offering a high speed charge transfer channel and leading to more efficient spatial separation of electron-hole pairs. The photo-generated electrons from the conduction band (CB) of Bi 2 WO 6 transfer to the Au, and then release to the valence band (VB) of CdS to recombine with the holes of CdS. It allows the electrons remaining in the CB of CdS and holes in the VB of Bi 2 WO 6 to possess strong reduction and oxidation powers, respectively, leading the Bi 2 WO 6 /Au/CdS to exhibit high photocatalytic reduction of CO 2 , relative to bare Bi 2 WO 6 , Bi 2 WO 6 /Au, and Bi 2 WO 6 /CdS. The depressed hole density on CdS also enhances the stability of the CdS against photocorrosion.

Reversible electron-hole separation in a hot carrier solar cell

NASA Astrophysics Data System (ADS)

Limpert, S.; Bremner, S.; Linke, H.

2015-09-01

Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices.

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871; Zhang, Qin

2014-11-24

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom ofmore » the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.« less

High-Efficiency Solar Cells Using Photonic-Bandgap Materials

NASA Technical Reports Server (NTRS)

Dowling, Jonathan; Lee, Hwang

2005-01-01

Solar photovoltaic cells would be designed to exploit photonic-bandgap (PBG) materials to enhance their energy-conversion efficiencies, according to a proposal. Whereas the energy-conversion efficiencies of currently available solar cells are typically less than 30 percent, it has been estimated that the energy-conversion efficiencies of the proposed cells could be about 50 percent or possibly even greater. The primary source of inefficiency of a currently available solar cell is the mismatch between the narrow wavelength band associated with the semiconductor energy gap (the bandgap) and the broad wavelength band of solar radiation. This mismatch results in loss of power from both (1) long-wavelength photons, defined here as photons that do not have enough energy to excite electron-hole pairs across the bandgap, and (2) short-wavelength photons, defined here as photons that excite electron- hole pairs with energies much above the bandgap. It follows that a large increase in efficiency could be obtained if a large portion of the incident solar energy could be funneled into a narrow wavelength band corresponding to the bandgap. In the proposed approach, such funneling would be effected by use of PBG materials as intermediaries between the Sun and photovoltaic cells.

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8% were obtained. To further study carrier extraction in inverted polymer solar cells, the active layer thickness dependence of the efficiency was investigated. For devices with active layer thickness < 200 nm, power conversion efficiencies over 8% was obtained. This result is important for demonstrating improved large-scale processing compatibility. Above 200 nm, significant reduction in cell efficiency were observed. A detailed study of the loss processes that contributed to the reduction in efficiency for thick-film devices are presented.

Two Aromatic Rings Coupled a Sulfur-Containing Group to Favor Protein Electron Transfer by Instantaneous Formations of π∴S:π↔π:S∴π or π∴π:S↔π:π∴S Five-Electron Bindings

PubMed Central

Sun, Weichao; Ren, Haisheng; Tao, Ye; Xiao, Dong; Qin, Xin; Deng, Li; Shao, Mengyao; Gao, Jiali; Chen, Xiaohua

2015-01-01

The cooperative interactions among two aromatic rings with a S-containing group are described, which may participate in electron hole transport in proteins. Ab initio calculations reveal the possibility for the formations of the π∴S:π↔π:S∴π and π∴π:S↔π:π∴S five-electron bindings in the corresponding microsurrounding structures in proteins, both facilitating electron hole transport as efficient relay stations. The relay functionality of these two special structures comes from their low local ionization energies and proper binding energies, which varies with the different aromatic amino acids, S-containing residues, and the arrangements of the same aromatic rings according to the local microsurroundings in proteins. PMID:26120374

Enhanced hole boring with two-color relativistic laser pulses in the fast ignition scheme

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Changhai; Tian, Ye; Li, Wentao

A scheme of using two-color laser pulses for hole boring into overdense plasma as well as energy transfer into electron and ion beams has been studied using particle-in-cell simulations. Following an ultra-short ultra-intense hole-boring laser pulse with a short central wavelength in extreme ultra-violet range, the main infrared driving laser pulse can be guided in the hollow channel preformed by the former laser and propagate much deeper into an overdense plasma, as compared to the case using the infrared laser only. In addition to efficiently transferring the main driving laser energy into energetic electrons and ions generation deep inside themore » overdense plasma, the ion beam divergence can be greatly reduced. The results might be beneficial for the fast ignition concept of inertial confinement fusion.« less

Machining of AISI D2 Tool Steel with Multiple Hole Electrodes by EDM Process

NASA Astrophysics Data System (ADS)

Prasad Prathipati, R.; Devuri, Venkateswarlu; Cheepu, Muralimohan; Gudimetla, Kondaiah; Uzwal Kiran, R.

2018-03-01

In recent years, with the increasing of technology the demand for machining processes is increasing for the newly developed materials. The conventional machining processes are not adequate to meet the accuracy of the machining of these materials. The non-conventional machining processes of electrical discharge machining is one of the most efficient machining processes is being widely used to machining of high accuracy products of various industries. The optimum selection of process parameters is very important in machining processes as that of an electrical discharge machining as they determine surface quality and dimensional precision of the obtained parts, even though time consumption rate is higher for machining of large dimension features. In this work, D2 high carbon and chromium tool steel has been machined using electrical discharge machining with the multiple hole electrode technique. The D2 steel has several applications such as forming dies, extrusion dies and thread rolling. But the machining of this tool steel is very hard because of it shard alloyed elements of V, Cr and Mo which enhance its strength and wear properties. However, the machining is possible by using electrical discharge machining process and the present study implemented a new technique to reduce the machining time using a multiple hole copper electrode. In this technique, while machining with multiple holes electrode, fin like projections are obtained, which can be removed easily by chipping. Then the finishing is done by using solid electrode. The machining time is reduced to around 50% while using multiple hole electrode technique for electrical discharge machining.

Development program on a cold cathode electron gun

NASA Technical Reports Server (NTRS)

Spindt, C. A.; Holland, C. E.

1985-01-01

During this phase of the cathode development program, SRI improved the multiple electron beam exposure system used to print hole patterns for the cathode arrays, studied anisotropic etch processes, conducted cathode investigations using an emission microscope, reviewed possible alternate materials for cathode fabrication, studied cathode storage techniques, conducted high power operation experiments, and demonstrated high-current-density operation with small arrays of tips.

High power cascade diode lasers emitting near 2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less

Integration of Semiconducting Sulfides for Full-Spectrum Solar Energy Absorption and Efficient Charge Separation.

PubMed

Zhuang, Tao-Tao; Liu, Yan; Li, Yi; Zhao, Yuan; Wu, Liang; Jiang, Jun; Yu, Shu-Hong

2016-05-23

The full harvest of solar energy by semiconductors requires a material that simultaneously absorbs across the whole solar spectrum and collects photogenerated electrons and holes separately. The stepwise integration of three semiconducting sulfides, namely ZnS, CdS, and Cu2-x S, into a single nanocrystal, led to a unique ternary multi-node sheath ZnS-CdS-Cu2-x S heteronanorod for full-spectrum solar energy absorption. Localized surface plasmon resonance (LSPR) in the nonstoichiometric copper sulfide nanostructures enables effective NIR absorption. More significantly, the construction of pn heterojunctions between Cu2-x S and CdS leads to staggered gaps, as confirmed by first-principles simulations. This band alignment causes effective electron-hole separation in the ternary system and hence enables efficient solar energy conversion. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoparticle-assisted high photoconductive gain in composites of polymer and fullerene.

PubMed

Chen, Hsiang-Yu; Lo, Michael K F; Yang, Guanwen; Monbouquette, Harold G; Yang, Yang

2008-09-01

Polymer-inorganic nanocrystal composites offer an attractive means to combine the merits of organic and inorganic materials into novel electronic and photonic systems. However, many applications of these composites are limited by the solubility and distribution of the nanocrystals in the polymer matrices. Here we show that blending CdTe nanoparticles into a polymer-fullerene matrix followed by solvent annealing can achieve high photoconductive gain under low applied voltages. The surface capping ligand renders the nanoparticles highly soluble in the polymer blend, thereby enabling high CdTe loadings. An external quantum efficiency as high as approximately 8,000% at 350 nm was achieved at -4.5 V. Hole-dominant devices coupled with atomic force microscopy images show a higher concentration of nanoparticles near the cathode-polymer interface. The nanoparticles and trapped electrons assist hole injection into the polymer under reverse bias, contributing to efficiency values in excess of 100%.

Facile solution-processed aqueous MoOx for feasible application in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zheng, Qinghong; Qu, Disui; Zhang, Yan; Li, Wanshu; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Liu, Liming; Wang, Honghang; Zhang, Xiaowen

2018-05-01

Solution-processed techniques attract increasing attentions in organic electronics for their low-cost and scalable manufacturing. We demonstrate the favorite hole injection material of solution-processed aqueous MoOx (s-MoOx) with facile fabrication process and cast successful application to constructing efficient organic light-emitting diodes (OLEDs). Atomic force microscopy and X-ray photoelectron spectroscopy analysis show that s-MoOx behaves superior film morphology and non-stoichiometry with slight oxygen deficiency. With tris(8-hydroxy-quinolinato)aluminium as emitting layer, s-MoOx based OLED shows maximum luminous efficiency of 7.9 cd/A and power efficiency of 5.9 lm/W, which have been enhanced by 43.6% and 73.5%, respectively, in comparison with the counterpart using conventional vacuum thermal evaporation MoOx. Current-voltage, impedance-voltage, phase-voltage and capacitance-voltage characteristics of hole-only devices indicate that s-MoOx with two processes of "spin-coating/annealing" shows mostly enhanced hole injection capacity and thus promoting device performance. Our experiments provide an alternative approach for constructing efficient OLED with solution process.

Triazatruxene-Based Hole Transporting Materials for Highly Efficient Perovskite Solar Cells.

PubMed

Rakstys, Kasparas; Abate, Antonio; Dar, M Ibrahim; Gao, Peng; Jankauskas, Vygintas; Jacopin, Gwénolé; Kamarauskas, Egidijus; Kazim, Samrana; Ahmad, Shahzada; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

2015-12-30

Four center symmetrical star-shaped hole transporting materials (HTMs) comprising planar triazatruxene core and electron-rich methoxy-engineered side arms have been synthesized and successfully employed in (FAPbI3)0.85(MAPbBr3)0.15 perovskite solar cells. These HTMs are obtained from relatively cheap starting materials by adopting facile preparation procedure, without using expensive and complicated purification techniques. Developed compounds have suitable highest occupied molecular orbitals (HOMO) with respect to the valence band level of the perovskite, and time-resolved photoluminescence indicates that hole injection from the valence band of perovskite into the HOMO of triazatruxene-based HTMs is relatively more efficient as compared to that of well-studied spiro-OMeTAD. Remarkable power conversion efficiency over 18% was achieved using 5,10,15-trihexyl-3,8,13-tris(4-methoxyphenyl)-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (KR131) with compositive perovskite absorber. This result demonstrates triazatruxene-based compounds as a new class of HTM for the fabrication of highly efficient perovskite solar cells.

The collisional Penrose process

NASA Astrophysics Data System (ADS)

Schnittman, Jeremy D.

2018-06-01

Shortly after the discovery of the Kerr metric in 1963, it was realized that a region existed outside of the black hole's event horizon where no time-like observer could remain stationary. In 1969, Roger Penrose showed that particles within this ergosphere region could possess negative energy, as measured by an observer at infinity. When captured by the horizon, these negative energy particles essentially extract mass and angular momentum from the black hole. While the decay of a single particle within the ergosphere is not a particularly efficient means of energy extraction, the collision of multiple particles can reach arbitrarily high center-of-mass energy in the limit of extremal black hole spin. The resulting particles can escape with high efficiency, potentially serving as a probe of high-energy particle physics as well as general relativity. In this paper, we briefly review the history of the field and highlight a specific astrophysical application of the collisional Penrose process: the potential to enhance annihilation of dark matter particles in the vicinity of a supermassive black hole.

Observations of electron vortex magnetic holes and related wave-particle interactions in the turbulent magnetosheath

NASA Astrophysics Data System (ADS)

Huang, S.; Sahraoui, F.; Yuan, Z.; He, J.; Zhao, J.; Du, J.; Le Contel, O.; Wang, X.; Deng, X.; Fu, H.; Zhou, M.; Shi, Q.; Breuillard, H.; Pang, Y.; Yu, X.; Wang, D.

2017-12-01

Magnetic hole is characterized by a magnetic depression, a density peak, a total electron temperature increase (with a parallel temperature decrease but a perpendicular temperature increase), and strong currents carried by the electrons. The current has a dip in the core region of the magnetic hole and a peak in the outer region of the magnetic hole. There is an enhancement in the perpendicular electron fluxes at 90° pitch angles inside the magnetic hole, implying that the electrons are trapped within it. The variations of the electron velocity components Vem and Ven suggest that an electron vortex is formed by trapping electrons inside the magnetic hole in the circular cross-section. These observations demonstrate the existence of a new type of coherent structures behaving as an electron vortex magnetic hole in turbulent space plasmas as predicted by recent kinetic simulations. We perform a statistically study using high time solution data from the MMS mission. The magnetic holes with short duration (i.e., < 0.5 s) have their cross section smaller than the ion gyro-radius. Superposed epoch analysis of all events reveals that an increase in the electron density and total temperature, significantly increase (resp. decrease) the electron perpendicular (resp. parallel) temperature, and an electron vortex inside the holes. Electron fluxes at 90° pitch angles with selective energies increase in the KSMHs, are trapped inside KSMHs and form the electron vortex due to their collective motion. All these features are consistent with the electron vortex magnetic holes obtained in 2D and 3D particle-in-cell simulations, indicating that the observed the magnetic holes seem to be best explained as electron vortex magnetic holes. It is furthermore shown that the magnetic holes are likely to heat and accelerate the electrons. We also investigate the coupling between whistler waves and electron vortex magnetic holes. These whistler waves can be locally generated inside electron vortex magnetic holes by electron temperature anisotropic instability.

Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

DOE PAGES

Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; ...

2015-09-18

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealedmore » both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.« less

Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells.

PubMed

Zhong, Yu; Trinh, M Tuan; Chen, Rongsheng; Purdum, Geoffrey E; Khlyabich, Petr P; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; Zhang, Boyuan; Wang, Wei; Nam, Chang-Yong; Sfeir, Matthew Y; Black, Charles T; Steigerwald, Michael L; Loo, Yueh-Lin; Ng, Fay; Zhu, X-Y; Nuckolls, Colin

2015-09-18

Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor-acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. This study describes a new motif for designing highly efficient acceptors for organic solar cells.

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng

2016-05-15

In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pitmore » sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.« less

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

PubMed

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Polyethers containing 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole chromophores as solution processed materials for hole transporting layers of OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Tavgeniene, D.; Xie, Z.; Lin, X.; Zhang, B.; Grigalevicius, S.

2018-02-01

Two polyethers containing electroactive pendent 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole moieties have been synthesized by the multi-step synthetic route. Full characterization of their structures is presented. The polymers represent derivatives of very high thermal stability with initial thermal degradation temperatures of 425 °C and 431 °C. Glass transition temperatures of the amorphous materials were also very high and reached values of 154 °C and 163 °C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials of 5.84 eV and 5.93 eV. Hole-transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq3 as the green emitter and electron transporting material. An electroluminescent device containing hole-transporting layer (HTL) of the polymer with electroactive 4-carbazolyl-7-phenylbenzo[c]-1,2,5-thiadiazole moieties exhibited turn on voltage of 6.2 V, maximum photometric efficiency of 2.5 cd/A and maximum brightness exceeding 300 cd/m2. The device containing HTL of the polymer with 4-carbazolyl-7-(1-naphtyl)benzo[c]-1,2,5-thiadiazole moieties demonstrated turn on voltage of 5.2 V, maximum photometric efficiency of 1.6 cd/A and maximum brightness exceeding 1500 cd/m2. The efficiencies were about 30-90% higher than that of the device containing widely used hole transporting layers of poly(9-vinylcarbazole).

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

NASA Astrophysics Data System (ADS)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

2016-01-01

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes.

PubMed

Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increased hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

NASA Astrophysics Data System (ADS)

Zulqarnain Haider, Syed; Anwar, Hafeez; Wang, Mingqing

2018-03-01

Hole transport material (HTM) plays an important role in the efficiency and stability of perovskite solar cells (PSCs). Spiro-MeOTAD, the commonly used HTM, is costly and can be easily degraded by heat and moisture, thus offering hindrance to commercialize PSCs. There is dire need to find an alternate inorganic and stable HTM to exploit PSCs with their maximum capability. In this paper, a comprehensive device simulation is used to study various possible parameters that can influence the performance of perovskite solar cell with CuI as HTM. These include the effect of doping density, defect density and thickness of absorber layer, along with the influence of diffusion length of carriers as well as electron affinity of electron transport layer (ETM) and HTM on the performance of PSCs. In addition, hole mobility and doping density of HTM is also investigated. CuI is a p-type inorganic material with low cost and relatively high stability. It is found that concentration of dopant in absorber layer and HTM, the electron affinity of HTM and ETM affect the performance of solar cell minutely, while cell performance improves greatly with the reduction of defect density. Upon optimization of parameters, power conversion efficiency for this device is found to be 21.32%. The result shows that lead-based PSC with CuI as HTM is an efficient system. Enhancing the stability and reduction of defect density are critical factors for future research. These factors can be improved by better fabrication process and proper encapsulation of solar cell.

Accumulative charge separation for solar fuels production: coupling light-induced single electron transfer to multielectron catalysis.

PubMed

Hammarström, Leif

2015-03-17

The conversion and storage of solar energy into a fuel holds promise to provide a significant part of the future renewable energy demand of our societies. Solar energy technologies today generate heat or electricity, while the large majority of our energy is used in the form of fuels. Direct conversion of solar energy to a fuel would satisfy our needs for storable energy on a large scale. Solar fuels can be generated by absorbing light and converting its energy to chemical energy by electron transfer leading to separation of electrons and holes. The electrons are used in the catalytic reduction of a cheap substrate with low energy content into a high-energy fuel. The holes are filled by oxidation of water, which is the only electron source available for large scale solar fuel production. Absorption of a single photon typically leads to separation of a single electron-hole pair. In contrast, fuel production and water oxidation are multielectron, multiproton reactions. Therefore, a system for direct solar fuel production must be able to accumulate the electrons and holes provided by the sequential absorption of several photons in order to complete the catalytic reactions. In this Account, the process is termed accumulative charge separation. This is considerably more complicated than charge separation on a single electron level and needs particular attention. Semiconductor materials and molecular dyes have for a long time been optimized for use in photovoltaic devices. Efforts are made to develop new systems for light harvesting and charge separation that are better optimized for solar fuel production than those used in the early devices presented so far. Significant progress has recently been made in the discovery and design of better homogeneous and heterogeneous catalysts for solar fuels and water oxidation. While the heterogeneous ones perform better today, molecular catalysts based on transition metal complexes offer much greater tunability of electronic and structural properties, they are typically more amenable to mechanistic analysis, and they are small and therefore require less material. Therefore, they have arguably greater potential as future efficient catalysts but must be efficiently coupled to accumulative charge separation. This Account discusses accumulative charge separation with focus on molecular and molecule-semiconductor hybrid systems. The coupling between charge separation and catalysis involves many challenges that are often overlooked, and they are not always apparent when studying water oxidation and fuel formation as separate half-reactions with sacrificial agents. Transition metal catalysts, as well as other multielectron donors and acceptors, cycle through many different states that may quench the excited sensitizer by nonproductive pathways. Examples where this has been shown, often with ultrafast rates, are reviewed. Strategies to avoid these competing energy-loss reactions and still obtain efficient coupling of charge separation to catalysis are discussed. This includes recent examples of dye-sensitized semiconductor devices with molecular catalysts and dyes that realize complete water splitting, albeit with limited efficiency.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells

NASA Astrophysics Data System (ADS)

Kohnehpoushi, Saman; Nazari, Pariya; Abdollahi Nejand, Bahram; Eskandari, Mehdi

2018-05-01

In this work MoS2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells.

PubMed

Kohnehpoushi, Saman; Nazari, Pariya; Nejand, Bahram Abdollahi; Eskandari, Mehdi

2018-05-18

In this work MoS 2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS 2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS 2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS 2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO 2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

CuI as Hole-Transport Channel for Enhancing Photoelectrocatalytic Activity by Constructing CuI/BiOI Heterojunction.

PubMed

Sun, Mingjuan; Hu, Jiayue; Zhai, Chunyang; Zhu, Mingshan; Pan, Jianguo

2017-04-19

In this paper, CuI, as a typical hole-transport channel, was used to construct a high-performance visible-light-driven CuI/BiOI heterostructure for photoelectrocatalytic applications. The heterostructure combines the broad visible absorption of BiOI and high hole mobility of CuI. Compared to pure BiOI, the CuI/BiOI heterostructure exhibited distinctly enhanced photoelectrocatalytic performance for the oxidation of methanol and organic pollutants under visible-light irradiation. The photogenerated electron-hole pairs of the excited BiOI can be separated efficiently through CuI, in which the CuI acts as a superior hole-transport channel to improve photoelectrocatalytic oxidization of methanol and organic pollutants. The outstanding photoelectrocatalytic activity shows that the p-type CuI works as a promising hole-transport channel to improve the photocatalytic performance of traditional semiconductors.

Influence of different TiO2 blocking films on the photovoltaic performance of perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Chenxi; Luo, Yudan; Chen, Xiaohong; Ou-Yang, Wei; Chen, Yiwei; Sun, Zhuo; Huang, Sumei

2016-12-01

Organolead trihalide perovskite materials have been successfully used as light absorbers in efficient photovoltaic (PV) cells. Cell structures based on mesoscopic metal oxides and planar heterojunctions have already demonstrated very impressive and brisk advances, holding great potential to grow into a mature PV technology. High power conversion efficiency (PCE) values have been obtained from the mesoscopic configuration in which a few hundred nano-meter thick mesoporous scaffold (e.g. TiO2 or Al2O3) infiltrated by perovskite absorber was sandwiched between the electron and hole transport layers. A uniform and compact hole-blocking layer is necessary for high efficient perovskite-based thin film solar cells. In this study, we investigated the characteristics of TiO2 compact layer using various methods and its effects on the PV performance of perovskite solar cells. TiO2 compact layer was prepared by a sol-gel method based on titanium isopropoxide and HCl, spin-coating of titanium diisopropoxide bis (acetylacetonate), screen-printing of Dyesol's bocking layer titania paste, and a chemical bath deposition (CBD) technique via hydrolysis of TiCl4, respectively. The morphological and micro-structural properties of the formed compact TiO2 layers were characterized by scanning electronic microscopy and X-ray diffraction. The analyses of devices performance characteristics showed that surface morphologies of TiO2 compact films played a critical role in affecting the efficiencies. The nanocrystalline TiO2 film deposited via the CBD route acts as the most efficient hole-blocking layer and achieves the best performance in perovskite solar cells. The CBD-based TiO2 compact and dense layer offers a small series resistance and a large recombination resistance inside the device, and makes it possible to achieve a high power conversion efficiency of 12.80%.

Spinel Co3O4 nanomaterials for efficient and stable large area carbon-based printed perovskite solar cells.

PubMed

Bashir, Amna; Shukla, Sudhanshu; Lew, Jia Haur; Shukla, Shashwat; Bruno, Annalisa; Gupta, Disha; Baikie, Tom; Patidar, Rahul; Akhter, Zareen; Priyadarshi, Anish; Mathews, Nripan; Mhaisalkar, Subodh G

2018-02-01

Carbon based perovskite solar cells (PSCs) are fabricated through easily scalable screen printing techniques, using abundant and cheap carbon to replace the hole transport material (HTM) and the gold electrode further reduces costs, and carbon acts as a moisture repellent that helps in maintaining the stability of the underlying perovskite active layer. An inorganic interlayer of spinel cobaltite oxides (Co 3 O 4 ) can greatly enhance the carbon based PSC performance by suppressing charge recombination and extracting holes efficiently. The main focus of this research work is to investigate the effectiveness of Co 3 O 4 spinel oxide as the hole transporting interlayer for carbon based perovskite solar cells (PSCs). In these types of PSCs, the power conversion efficiency (PCE) is restricted by the charge carrier transport and recombination processes at the carbon-perovskite interface. The spinel Co 3 O 4 nanoparticles are synthesized using the chemical precipitation method, and characterized by X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and UV-Vis spectroscopy. A screen printed thin layer of p-type inorganic spinel Co 3 O 4 in carbon PSCs provides a better-energy level matching, superior efficiency, and stability. Compared to standard carbon PSCs (PCE of 11.25%) an improved PCE of 13.27% with long-term stability, up to 2500 hours under ambient conditions, is achieved. Finally, the fabrication of a monolithic perovskite module is demonstrated, having an active area of 70 cm 2 and showing a power conversion efficiency of >11% with virtually no hysteresis. This indicates that Co 3 O 4 is a promising interlayer for efficient and stable large area carbon PSCs.

The privileged spectrum of cnoidal ion holes and its extension by imperfect ion trapping

NASA Astrophysics Data System (ADS)

Schamel, Hans; Das, Nilakshi; Borah, Prathana

2018-01-01

The fundamental properties of nonlinear ion hole modes propagating in current-driven collisionless plasmas are derived. Making use of Schamel's alternative method their spatial structure ϕ (x) and phase velocities u0 are analyzed and found to depend crucially on the used trapped ion distribution fit. A regular fit represents a continuous spectrum, which is called privileged or perfect since it yields a definite u0 and appears most realistic. A singular fit, on the other hand, involving jumps and moderate slope singularities at the separatrix, does reveal further classes of hole equilibria at the cost, however, of a well-defined u0. This explains why Bernstein, Greene, Kruskal (BGK)-solutions of the Vlasov-Poisson system, exhibiting a strong slope singularity of their derived trapped particle distribution, can principally not provide definite u0 s. The nonlinear dispersion relation (or u0) of privileged ion holes, on the other hand, is equivalent with that of cnoidal electron holes, i.e. in addition to the ordinary ion acoustic branch there exists a correspondence to the "Langmuir" branch and to the multiple "slow electron acoustic" branches, reflecting different trapping scenarios.

Exceeding Conventional Photovoltaic Efficiency Limits Using Colloidal Quantum Dots

NASA Astrophysics Data System (ADS)

Pach, Gregory F.

Colloidal quantum dots (QDs) are a widely investigated field of research due to their highly tunable nature in which the optical and electronic properties of the nanocrystal can be manipulated by merely changing the nanocrystal's size. Specifically, colloidal quantum dot solar cells (QDSCs) have become a promising candidate for future generation photovoltaic technology. Quantum dots exhibit multiple exciton generation (MEG) in which multiple electron-hole pairs are generated from a single high-energy photon. This process is not observed in bulk-like semiconductors and allows for QDSCs to achieve theoretical efficiency limits above the standard single-junction Shockley-Queisser limit. However, the fast expanding field of QDSC research has lacked standardization of synthetic techniques and device design. Therefore, we sought to detail methodology for synthesizing PbS and PbSe QDs as well as photovoltaic device fabrication techniques as a fast track toward constructing high-performance solar cells. We show that these protocols lead toward consistently achieving efficiencies above 8% for PbS QDSCs. Using the same methodology for building single-junction photovoltaic devices, we incorporated PbS QDs as a bottom cell into a monolithic tandem architecture along with solution-processed CdTe nanocrystals. Modeling shows that near-peak tandem device efficiencies can be achieved across a wide range of bottom cell band gaps, and therefore the highly tunable band gap of lead-chalcogenide QDs lends well towards a bottom cell in a tandem architecture. A fully functioning monolithic tandem device is realized through the development of a ZnTe/ZnO recombination layer that appropriately combines the two subcells in series. Multiple recent reports have shown nanocrystalline heterostructures to undergo the MEG process more efficiency than several other nanostrucutres, namely lead-chalcogenide QDs. The final section of my thesis expands upon a recent publication by Zhang et. al., which details the synthesis of PbS/CdS heterostructures in which the PbS and CdS domains exist on opposite sides of the nanocrystal and are termed "Janus particles". Transient absorption spectroscopy shows MEG quantum yields above unity very the thermodynamic limit of 2Eg for PbS/CdS Janus particles. We further explain a mechanism for enhanced MEG using photoluminescence studies.

Modular Apparatus and Method for Attaching Multiple Devices

NASA Technical Reports Server (NTRS)

Okojie, Robert S (Inventor)

2015-01-01

A modular apparatus for attaching sensors and electronics is disclosed. The modular apparatus includes a square recess including a plurality of cavities and a reference cavity such that a pressure sensor can be connected to the modular apparatus. The modular apparatus also includes at least one voltage input hole and at least one voltage output hole operably connected to each of the plurality of cavities such that voltage can be applied to the pressure sensor and received from the pressure sensor.

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

NASA Astrophysics Data System (ADS)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are connected with light where the hole currents are dominant and must be continuous through the junction. The major shifts of the bands in operating conditions are self-adjusting by a change in the junction dipole momentum.

Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance.

PubMed

Cao, Bing; He, Xiaoming; Sorge, Jason B; Lalany, Abeed; Ahadi, Kaveh; Afshar, Amir; Olsen, Brian C; Hauger, Tate C; Mobarok, Md Hosnay; Li, Peng; Cadien, Kenneth C; Brett, Michael J; Luber, Erik J; Buriak, Jillian M

2017-11-08

Organic solar cells (OSCs) are a complex assembly of disparate materials, each with a precise function within the device. Typically, the electrodes are flat, and the device is fabricated through a layering approach of the interfacial layers and photoactive materials. This work explores the integration of high surface area transparent electrodes to investigate the possible role(s) a three-dimensional electrode could take within an OSC, with a BHJ composed of a donor-acceptor combination with a high degree of electron and hole mobility mismatch. Nanotree indium tin oxide (ITO) electrodes were prepared via glancing angle deposition, structures that were previously demonstrated to be single-crystalline. A thin layer of zinc oxide was deposited on the ITO nanotrees via atomic layer deposition, followed by a self-assembled monolayer of C 60 -based molecules that was bound to the zinc oxide surface through a carboxylic acid group. Infiltration of these functionalized ITO nanotrees with the photoactive layer, the bulk heterojunction comprising PC 71 BM and a high hole mobility low band gap polymer (PDPPTT-T-TT), led to families of devices that were analyzed for the effect of nanotree height. When the height was varied from 0 to 50, 75, 100, and 120 nm, statistically significant differences in device performance were noted with the maximum device efficiencies observed with a nanotree height of 75 nm. From analysis of these results, it was found that the intrinsic mobility mismatch between the donor and acceptor phases could be compensated for when the electron collection length was reduced relative to the hole collection length, resulting in more balanced charge extraction and reduced recombination, leading to improved efficiencies. However, as the ITO nanotrees increased in height and branching, the decrease in electron collection length was offset by an increase in hole collection length and potential deleterious electric field redistribution effects, resulting in decreased efficiency.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

Efficient and Air-Stable Planar Perovskite Solar Cells Formed on Graphene-Oxide-Modified PEDOT:PSS Hole Transport Layer

NASA Astrophysics Data System (ADS)

Luo, Hui; Lin, Xuanhuai; Hou, Xian; Pan, Likun; Huang, Sumei; Chen, Xiaohong

2017-10-01

As a hole transport layer, PEDOT:PSS usually limits the stability and efficiency of perovskite solar cells (PSCs) due to its hygroscopic nature and inability to block electrons. Here, a graphene-oxide (GO)-modified PEDOT:PSS hole transport layer was fabricated by spin-coating a GO solution onto the PEDOT:PSS surface. PSCs fabricated on a GO-modified PEDOT:PSS layer exhibited a power conversion efficiency (PCE) of 15.34%, which is higher than 11.90% of PSCs with the PEDOT:PSS layer. Furthermore, the stability of the PSCs was significantly improved, with the PCE remaining at 83.5% of the initial PCE values after aging for 39 days in air. The hygroscopic PSS material at the PEDOT:PSS surface was partly removed during spin-coating with the GO solution, which improves the moisture resistance and decreases the contact barrier between the hole transport layer and perovskite layer. The scattered distribution of the GO at the PEDOT:PSS surface exhibits superior wettability, which helps to form a high-quality perovskite layer with better crystallinity and fewer pin holes. Furthermore, the hole extraction selectivity of the GO further inhibits the carrier recombination at the interface between the perovskite and PEDOT:PSS layers. Therefore, the cooperative interactions of these factors greatly improve the light absorption of the perovskite layer, the carrier transport and collection abilities of the PSCs, and especially the stability of the cells.

Radiation hard blocked tunneling band {GaAs}/{AlGaAs} superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Wu, C. S.; Wen, C. P.; Reiner, P.; Tu, C. W.; Hou, H. Q.

1996-09-01

We have developed a novel multiple quantum well (MQW) long wavelength infrared (LWIR) detector which can operate in a photovoltaic detection mode with an intrinsic event discrimination (IED) capability. The detector was constructed using the {GaAs}/{AlGaAs} MQW technology to form a blocked tunneling band superlattice structure with a 10.2 micron wavelength and 2.2 micron bandwidth. The detector exhibited Schottky junction and photovoltaic detection characteristics with extremely low dark current and low noise as a result of a built-in tunneling current blocking layer structure. In order to enhance quantum efficiency, a built-in electric field was created by grading the doping concentration of each quantum well in the MQW region. The peak responsivity of the detector was 0.4 amps/W with a measured detectivity of 6.0 × 10 11 Jones. The external quantum efficiency was measured to be 4.4%. The detector demonstrated an excellent intrinsic event discrimination capability due to the presence of a p-type GaAs hole collector layer, which was grown on top of the n-type electron emitter region of the MQW detector. The best results show that an infrared signal which is as much as 100 times smaller than coincident nuclear radiation induced current can be distinguished and extracted from the noise signal. With this hole collector structure, our detector also demonstrated two-color detection.

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Chunhua; Ma, Ziguang; Zhou, Junming

2014-04-14

The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiencymore » of holes.« less

Hydrodynamics of the Dirac fluid in graphene

NASA Astrophysics Data System (ADS)

Lucas, Andrew

Recent advances in materials physics have allowed us to observe hydrodynamic electron flow in multiple materials. A uniquely interesting possibility is the emergence of a quasi-relativistic plasma of electrons and holes appearing in Dirac semimetals such as graphene. I will briefly review the unique features of the hydrodynamics of the Dirac fluid, and then discuss the theroetical signatures for the Dirac fluid, and its observation in experiment.

Polyethers with pendent phenylvinyl substituted carbazole rings as polymers for hole transporting layers of OLEDs

NASA Astrophysics Data System (ADS)

Griniene, R.; Liu, L.; Tavgeniene, D.; Sipaviciute, D.; Volyniuk, D.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Leduskrasts, K.; Grigalevicius, S.

2016-01-01

Polyethers containing pendent 3-(2-phenylvinyl)carbazole moieties have been synthesized by the multi-step synthetic routes. Full characterization of their structures is presented. The polymers represent materials of high thermal stability with initial thermal degradation temperatures exceeding 370 °C. The glass transition temperatures of the amorphous materials were in the range of 56-658 °C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials of about 5.6 eV. Hole-transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq3 as the green emitter and electron transporting layer. The device containing hole-transporting layers of poly{9-[6-(3-methyloxetan-3-ylmethoxy)hexyl]-3-(2-phenylvinyl)carbazole} exhibited the best overall performance with a maximum photometric efficiency of about 4.0 cd/A and maximum brightness exceeding 6430 cd/m2.

Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole

NASA Astrophysics Data System (ADS)

Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy S.; Tracy, Lisa; Reno, John; Hargett, Terry

2018-05-01

We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B =0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B . Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. In one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

Electroactive polymers containing 3-arylcarbazolyl units as hole transporting materials for OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Liu, L.; Tavgeniene, D.; Peciulyte, L.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Grigalevicius, S.

2015-04-01

Monomers and their polymers containing 3-arylcarbazolyl electrophores have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The polymers represent materials of high thermal stability having initial thermal degradation temperatures in the range of 331-411 °C. The glass transition temperatures of the amorphous polymeric materials were in the rage of 148-175 °C. The electron photoemission spectra of thin layers of monomers showed ionization potentials in the range of 5.6-5.65 eV. Hole-transporting properties of the polymers were tested in the structures of organic light emitting diodes with Alq3 as the green emitter. The device containing hole-transporting layers of polyether with 3-naphthylcarbazolyl groups exhibited the best overall performance with a maximum current efficiency of 3.3 cd/A and maximum brightness of about 1000 cd/m2.

New oligomers containing pendant 4-aryl-7-phenylfluorene units as efficient charge transporting materials for OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Baranauskyte, U.; Tavgeniene, D.; Andruleviciute, V.; Sutkuviene, S.; Yao, B.; Xie, Z.; Zhang, B.; Grigalevicius, S.

2017-10-01

Monomers and oligomers containing electronically isolated 4-aryl-7-phenylfluorene fragments have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The oligomers represent materials of very high thermal stability having initial thermal degradation temperatures in the range of 402-412 °C. The glass transition temperatures of the amorphous oligomers were in the rage of 97-129 °C. The electron photoemission spectra of thin layers of the oligomeric materials showed ionization potentials in the range of 5.7-6.1 eV. Hole injecting/transporting properties of the electroactive oligomers were tested in the structures of organic light emitting diodes with tris(quinolin-8-olato)aluminium as a green emitter. The device containing hole-transporting material with 4-biphenyl-7-phenylfluorene electrophores exhibited the best overall performance with low turn on voltage of 4.4 V, high current efficiency exceeding 3.6 cd/A and maximum brightness exceeding 3200 cd/m2.

Charge Transfer from n-Doped Nanocrystals: Mimicking Intermediate Events in Multielectron Photocatalysis.

PubMed

Wang, Junhui; Ding, Tao; Wu, Kaifeng

2018-06-12

In multielectron photocatalytic reactions, an absorbed photon triggers charge transfer from the light-harvester to the attached catalyst, leaving behind a charge of the opposite sign in the light-harvester. If this charge is not scavenged before the absorption of the following photons, photoexcitation generates not neutral but charged excitons from which the extraction of charges should become more difficult. This is potentially an efficiency-limiting intermediate event in multielectron photocatalysis. To study the charge dynamics in this event, we doped CdS nanocrystal quantum dots (QDs) with an extra electron and measured hole transfer from n-doped QDs to attached acceptors. We find that the Auger decay of charged excitons lowers the charge separation yield to 68.6% from 98.4% for neutral excitons. In addition, the hole transfer rate in the presence of two electrons (1290 ps) is slower than that in the presence one electron (776 ps), and the recombination rate of charge separated states is about 2 times faster in the former case. This model study provides important insights into possible efficiency-limiting intermediate events involved in photocatalysis.

Hole Transport in A-form DNA/RNA Hybrid Duplexes

NASA Astrophysics Data System (ADS)

Wong, Jiun Ru; Shao, Fangwei

2017-01-01

DNA/RNA hybrid duplexes are prevalent in many cellular functions and are an attractive target form for electrochemical biosensing and electric nanodevice. However the electronic conductivities of DNA/RNA hybrid duplex remain relatively unexplored and limited further technological applications. Here cyclopropyl-modified deoxyribose- and ribose-adenosines were developed to explore hole transport (HT) in both DNA duplex and DNA/RNA hybrids by probing the transient hole occupancies on adenine tracts. HT yields through both B-form and A-form double helixes displayed similar shallow distance dependence, although the HT yields of DNA/RNA hybrid duplexes were lower than those of DNA duplexes. The lack of oscillatory periods and direction dependence in HT through both helixes implied efficient hole propagation can be achieved via the hole delocalization and coherent HT over adenine tracts, regardless of the structural variations.

Hole Transport in A-form DNA/RNA Hybrid Duplexes

PubMed Central

Wong, Jiun Ru; Shao, Fangwei

2017-01-01

DNA/RNA hybrid duplexes are prevalent in many cellular functions and are an attractive target form for electrochemical biosensing and electric nanodevice. However the electronic conductivities of DNA/RNA hybrid duplex remain relatively unexplored and limited further technological applications. Here cyclopropyl-modified deoxyribose- and ribose-adenosines were developed to explore hole transport (HT) in both DNA duplex and DNA/RNA hybrids by probing the transient hole occupancies on adenine tracts. HT yields through both B-form and A-form double helixes displayed similar shallow distance dependence, although the HT yields of DNA/RNA hybrid duplexes were lower than those of DNA duplexes. The lack of oscillatory periods and direction dependence in HT through both helixes implied efficient hole propagation can be achieved via the hole delocalization and coherent HT over adenine tracts, regardless of the structural variations. PMID:28084308

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer.

PubMed

Lee, Yonghui; Lee, Seunghwan; Seo, Gabseok; Paek, Sanghyun; Cho, Kyung Taek; Huckaba, Aron J; Calizzi, Marco; Choi, Dong-Won; Park, Jin-Seong; Lee, Dongwook; Lee, Hyo Joong; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2018-06-01

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures

NASA Astrophysics Data System (ADS)

Izhnin, I. I.; Izhnin, A. I.; Fitsych, O. I.; Voitsekhovskii, A. V.; Gorn, D. I.; Semakova, A. A.; Bazhenov, N. L.; Mynbaev, K. D.; Zegrya, G. G.

2018-04-01

Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures were grown with molecular beam epitaxy on GaAs substrates. InAsSb-based structures were grown with metal-organic chemical vapor deposition on InAs substrates. The common feature of luminescence spectra of all the structures was the presence of peaks with the energy much larger than that of calculated optical transitions between the first quantization levels for electrons and heavy holes. Possibility of observation of optical transitions between the quantization levels of electrons and first and/or second heavy and light hole levels is discussed in the paper in relation to the specifics of the electronic structure of the materials under consideration.

High thermal stability fluorene-based hole-injecting material for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Li, Lu; Jiao, Bo; Li, Sanfeng; Ma, Lin; Yu, Yue; Wu, Zhaoxin

2016-03-01

Novel N1,N3,N5-tris(9,9-diphenyl-9H-fluroen-2-yl)-N1,N3,N5-triphenylbenzene-1,3,5-triamine (TFADB) was synthesized and characterized as a hole-injecting material (HIM) for organic light-emitting devices (OLEDs). By incorporating fluorene group TFADB shows a high glass-transition temperature Tg > 168 °C, indicative of excellent thermal stability. TFADB-based devices exhibited the highest performance in terms of the maximum current efficiency (6.0 cd/A), maximum power efficiency (4.0 lm/W), which is improved than that of the standard device based on 4-4‧-4″Tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (2T-NATA) (5.2 cd/A, 3.6 lm/W). This material could be a promising hole-injecting material, especially for the high temperature applications of OLEDs and other organic electronic devices.

Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2

NASA Astrophysics Data System (ADS)

Xiang, Fei-Xiang; Veldhorst, Menno; Dou, Shi-Xue; Wang, Xiao-Lin

2015-11-01

The recently discovered non-saturating and parabolic magnetoresistance and the pressure-induced superconductivity at low temperature in WTe2 imply its rich electronic structure and possible practical applications. Here we use magnetotransport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed from low temperature to high temperature up to 200 K with magnetic fields up to 8 T. Shubnikov-de Haas (SdH) oscillations with beating patterns are observed, the fast Fourier transform of which reveals three oscillation frequencies, corresponding to three pairs of Fermi pockets with comparable effective masses, m* ∼ 0.31~me . By fitting the Hall resistivity, we infer that they can be attributed to one pair of electron pockets and two pairs of hole pockets, together with nearly perfect compensation of the electron-hole carrier concentration. These magnetotransport measurements reveal the complex electronic structure in WTe2, explaining the non-saturating magnetoresistance.

Localized Surface Plasmon-Enhanced Electroluminescence in OLEDs by Self-Assembly Ag Nanoparticle Film

NASA Astrophysics Data System (ADS)

He, Xiaoxiao; Wang, Wenjun; Li, Shuhong; Wang, Qingru; Zheng, Wanquan; Shi, Qiang; Liu, Yunlong

2015-12-01

We fabricated Ag nanoparticle (NP) film in organic light emission diodes (OLEDs), and a 23 times increase in electroluminescence (EL) at 518 nm was probed by time-resolved EL measurement. The luminance and relative external quantum efficiency (REQE) were increased by 5.4 and 3.7 times, respectively. There comes a new energy transport way that localized surface plasmons (LSPs) would absorb energy that corresponds to the electron-hole pair before recombination, promoting the formation of electron-hole pair and exciting local surface plasmon resonance (LSPR). The extended lifetime of Alq3 indicates the existence of strong interaction between LSPR and exciton, which decreases the nonradiative decay rate of OLEDs.

Observation of chiral phonons

NASA Astrophysics Data System (ADS)

Zhu, Hanyu; Yi, Jun; Li, Ming-Yang; Xiao, Jun; Zhang, Lifa; Yang, Chih-Wen; Kaindl, Robert A.; Li, Lain-Jong; Wang, Yuan; Zhang, Xiang

2018-02-01

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing.

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

NASA Astrophysics Data System (ADS)

Zagonel, L. F.; Tizei, L. H. G.; Vitiello, G. Z.; Jacopin, G.; Rigutti, L.; Tchernycheva, M.; Julien, F. H.; Songmuang, R.; Ostasevicius, T.; de la Peña, F.; Ducati, C.; Midgley, P. A.; Kociak, M.

2016-05-01

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over three orders of magnitude, strong nonlinearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4 nm), the QDisk emission energy is observed to blueshift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm ), the blueshift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the "efficiency droop" as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

An Efficient Distributed Coverage Hole Detection Protocol for Wireless Sensor Networks.

PubMed

Sahoo, Prasan Kumar; Chiang, Ming-Jer; Wu, Shih-Lin

2016-03-17

In wireless sensor networks (WSNs), certain areas of the monitoring region may have coverage holes and serious coverage overlapping due to the random deployment of sensors. The failure of electronic components, software bugs and destructive agents could lead to the random death of the nodes. Sensors may be dead due to exhaustion of battery power, which may cause the network to be uncovered and disconnected. Based on the deployment nature of the nodes in remote or hostile environments, such as a battlefield or desert, it is impossible to recharge or replace the battery. However, the data gathered by the sensors are highly essential for the analysis, and therefore, the collaborative detection of coverage holes has strategic importance in WSNs. In this paper, distributed coverage hole detection algorithms are designed, where nodes can collaborate to detect the coverage holes autonomously. The performance evaluation of our protocols suggests that our protocols outperform in terms of hole detection time, limited power consumption and control packet overhead to detect holes as compared to other similar protocols.

11% efficiency solid-state dye-sensitized solar cells with copper(II/I) hole transport materials

PubMed Central

Cao, Yiming; Saygili, Yasemin; Ummadisingu, Amita; Teuscher, Joël; Luo, Jingshan; Pellet, Norman; Giordano, Fabrizio; Zakeeruddin, Shaik Mohammed; Moser, Jacques -E.; Freitag, Marina; Hagfeldt, Anders; Grätzel, Michael

2017-01-01

Solid-state dye-sensitized solar cells currently suffer from issues such as inadequate nanopore filling, low conductivity and crystallization of hole-transport materials infiltrated in the mesoscopic TiO2 scaffolds, leading to low performances. Here we report a record 11% stable solid-state dye-sensitized solar cell under standard air mass 1.5 global using a hole-transport material composed of a blend of [Cu (4,4′,6,6′-tetramethyl-2,2′-bipyridine)2](bis(trifluoromethylsulfonyl)imide)2 and [Cu (4,4′,6,6′-tetramethyl-2,2′-bipyridine)2](bis(trifluoromethylsulfonyl)imide). The amorphous Cu(II/I) conductors that conduct holes by rapid hopping infiltrated in a 6.5 μm-thick mesoscopic TiO2 scaffold are crucial for achieving such high efficiency. Using time-resolved laser photolysis, we determine the time constants for electron injection from the photoexcited sensitizers Y123 into the TiO2 and regeneration of the Y123 by Cu(I) to be 25 ps and 3.2 μs, respectively. Our work will foster the development of low-cost solid-state photovoltaic based on transition metal complexes as hole conductors. PMID:28598436

Realization of highly efficient hexagonal boron nitride neutron detectors

DOE PAGES

Maity, A.; Doan, T. C.; Li, J.; ...

2016-08-16

Here, we report the achievement of highly efficient 10B enriched hexagonal boron nitride (h- 10BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h- 10BN wafers 43 μm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple vertical “photoconductor-type” detector. Transport measurements revealed excellent vertical transport properties including high electrical resistivity (>10 13 Ω cm) and mobility-lifetime (μτ) products. A much larger μτ product for holes compared to that of electrons along the c-axis of h- BNmore » was observed, implying that holes (electrons) behave like majority (minority) carriers in undoped h- BN. Exposure to thermal neutrons from a californium-252 ( 252Cf) source moderated by a high density polyethylene moderator reveals that 43 μm h- 10BN detectors possess 51.4% detection efficiency at a bias voltage of 400 V, which is the highest reported efficiency for any semiconductor-based neutron detector. The results point to the possibility of obtaining highly efficient, compact solid-state neutron detectors with high gamma rejection and low manufacturing and maintenance costs.« less

Efficiency Enhancement of Hybrid Perovskite Solar Cells with MEH-PPV Hole-Transporting Layers

PubMed Central

Chen, Hsin-Wei; Huang, Tzu-Yen; Chang, Ting-Hsiang; Sanehira, Yoshitaka; Kung, Chung-Wei; Chu, Chih-Wei; Ikegami, Masashi; Miyasaka, Tsutomu; Ho, Kuo-Chuan

2016-01-01

In this study, hybrid perovskite solar cells are fabricated using poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and poly(3-hexylthiophene-2,5-diyl) (P3HT) as dopant-free hole-transporting materials (HTMs), and two solution processes (one- and two-step methods, respectively) for preparing methylammonium lead iodide perovskite. By optimizing the concentrations and solvents of MEH-PPV solutions, a power conversion efficiency of 9.65% with hysteresis-less performance is achieved, while the device with 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′spirobifluorene (Spiro-OMeTAD) doped with lithium salts and tert-butylpyridine (TBP) exhibits an efficiency of 13.38%. This result shows that non-doped MEH-PPV is a suitable, low-cost HTM for efficient polymer-based perovskite solar cells. The effect of different morphologies of methylammonium lead iodide perovskite on conversion efficiency is also investigated by incident photon-to-electron conversion efficiency (IPCE) curves and electrochemical impedance spectroscopy (EIS). PMID:27698464

White organic light-emitting diodes with Zn-complexes.

PubMed

Kim, Dong-Eun; Shin, Hoon-Kyu; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo

2014-02-01

This paper reviews OLEDs fabricated using Zn-complexes. Zn(HPB)2, Zn(HPB)q, and Zn(phen)q were synthesized as new electroluminescence materials. The electron affinity (EA) and ionization potential (IP) of Zn complexes were also determined and devices were characterized. Zn complexes such as Zn(HPB)2, Zn(HPB)q, and Zn(phen)q were found to exhibit blue and yellow emissions with wavelengths of 455, 532, and 535 nm, respectively. On the other hand, Zn(HPB)2 and Zn(HPB)q were applied as hole-blocking materials. As a result, the OLED efficiency by using Zn(HPB)2 as a hole-blocking material was improved. In particular, the OLED property of Zn(HPB)2 was found to be better than that of Zn(HPB)q. Moreover, Zn(phen)q was used as an electron-transporting material and compared with Alq3. The performance of the device with Zn(phen)q as an electron-transporting material was improved compared with Alq3-based devices. The Zn complexes can possibly be used as hole-blocking and electron-transporting materials in OLED devices. A white emission was ultimately realized from the OLED devices using Zn-complexes as inter-layer components.

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

PubMed

He, Penghui; Jiang, Congbiao; Lan, Linfeng; Sun, Sheng; Li, Yizhi; Gao, Peixiong; Zhang, Peng; Dai, Xingqiang; Wang, Jian; Peng, Junbiao; Cao, Yong

2018-05-22

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In 2 O 3 ) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm 2 V -1 s -1 , a maximum brightness of 13 400 cd/m 2 , and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In 2 O 3 and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In 2 O 3 can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10 5 and the on/off brightness ratio is 10 6 ).

3D hierarchical structures MnO2/C: A highly efficient catalyst for purification of volatile organic compounds with visible light irradiation

NASA Astrophysics Data System (ADS)

Zhou, Junli; Wu, Ming; Zhang, Yajun; Zhu, Chenguang; Fang, Yiwen; Li, Yongfeng; Yu, Lin

2018-07-01

This work mainly focuses on exploring carbon coated ε-MnO2 (ε-MnO2/C) with 3D hierarchical structures for degradation of gaseous toluene under visible light. Influence of C-coating on surface adsorption, visible-light activity and photocatalytic activities of C-coated MnO2 have been investigated. The results indicate that the C-coating behave as the adsorption and electron-transfer system, and the resulting C-coated ε-MnO2 could extend the optical response from UV to visible light region, which can generate more electron - hole pairs. The photocatalyst ε-MnO2/0.45C exhibited excellent visible-light photocatalytic activities, with degradation rate of toluene up to 87.34% in 70 min, but no photocatalytic activity could be observed for the pure ε-MnO2. The PL spectra and photocurrent response results indicate that the composite structure can not only enhance the utilization of visible light but also consequently reduce electron (e-)-hole (h+) pair recombination, which improve the photocatalytic efficiency of the composite photocatalyst. This work provides a facile and economic approach for fabricating photocatalysts with high efficiency for degradation of VOCs under visible light at room temperature.

Multi-applicative tetragonal TiO2/SnO2 nanocomposites for photocatalysis and gas sensing

NASA Astrophysics Data System (ADS)

Patil, S. M.; Dhodamani, A. G.; Vanalakar, S. A.; Deshmukh, S. P.; Delekar, S. D.

2018-04-01

TiO2-based mixed metal oxide heteronanostructures have multiple applications in photocatalysis and gas sensing because of their charge transport properties. In this study, we prepared tetragonal TiO2/SnO2 nanocomposites (NCs) with different weight percentages using a simple wet impregnation method. The physicochemical properties of the NCs were investigated using X-ray diffraction, Fourier transform-infrared spectroscopy, ultraviolet-visible spectroscopy, field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, transmission electron microscopy, and Brunauer-Emmett-Teller surface area analysis. The results showed that the surface area of the NCs increased significantly and the anatase TiO2 was sensitized after the addition of a small amount of cassiterite SnO2 NPs. We systematically studied the as-prepared NCs during the photocatalytic degradation of Congo Red dye under visible light irradiation (λ > 420 nm) and NH3 gas sensing, which demonstrated the efficient photocatalytic performance and the superior sensing response of the catalyst with a weight composition of 25% SnO2 in TiO2 (4:1) compared with the other NCs or the bare individual nanoparticles. The improved photocatalytic and gas sensing performance of the TiO2/SnO2 (4:1) NCs may be attributed to the increased active surface area, the increased adsorption of the dye and target gas molecules, as well as efficient electron-hole charge separation and transfer.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires

PubMed Central

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-01-01

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased. PMID:27556534

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

PubMed

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-08-24

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

Effective photodegradation of methomyl pesticide in concentrated solutions by novel enhancement of the photocatalytic activity of TiO2 using CdSO4 nanoparticles.

PubMed

Barakat, N A M; Nassar, M M; Farrag, T E; Mahmoud, M S

2014-01-01

Annihilation of electrons-holes recombination process is the main remedy to enhance the photocatalytic activity of the semiconductors photocatalysts. Doping of this class of photocatalysts by foreign nanoparticles is usually utilized to create high Schottky barrier that facilitates electron capture. In the literature, because nonpolar nanoparticles (usually pristine metals, e.g., Ag, Pt, Au, etc.) were utilized in the doping process, the corresponding improvement was relatively low. In this study, CdSO4-doped TiO2 nanoparticles are introduced as a powerful and reusable photocatalyst for the photocatalytic degradation of methomyl pesticide in concentrated aqueous solutions. The utilized CdSO4 nanoparticles form polar grains in the TiO2 matrix due to the electrons leaving characteristic of the sulfate anion. The introduced nanoparticles could successfully eliminate the harmful pesticide under the sunlight radiation within a very short time (less than 1 h), with a removal capacity reaching 1,000 mg pesticide per gram of the introduced photocatalyst. Moreover, increase in the initial concentration of the methomyl did not affect the photocatalytic performance; typically 300, 500, 1,000, and 2,000 mg/l solutions were completely treated within 30, 30, 40, and 60 min, respectively, using 100 mg catalyst. Interestingly, the photocatalytic efficiency was not affected upon multiple use of the photocatalyst. Moreover, negative activation energy was obtained which reveals super activity of the introduced photocatalyst. The distinct photocatalytic activity indicates the complete annihilation of the electrons-holes recombination process and abundant existence of electrons on the catalyst surfaces due to strong electrons capturing the operation of the utilized polar CdSO4 nanoparticles. The introduced photocatalyst has been prepared using the sol-gel technique. Overall, the simplicity of the synthesizing procedure and the obtained featured photocatalytic activity strongly recommend the introduced nanoparticles to treat the methomyl-containing polluted water.

On automating domain connectivity for overset grids

NASA Technical Reports Server (NTRS)

Chiu, Ing-Tsau; Meakin, Robert L.

1995-01-01

An alternative method for domain connectivity among systems of overset grids is presented. Reference uniform Cartesian systems of points are used to achieve highly efficient domain connectivity, and form the basis for a future fully automated system. The Cartesian systems are used to approximate body surfaces and to map the computational space of component grids. By exploiting the characteristics of Cartesian systems, Chimera type hole-cutting and identification of donor elements for intergrid boundary points can be carried out very efficiently. The method is tested for a range of geometrically complex multiple-body overset grid systems. A dynamic hole expansion/contraction algorithm is also implemented to obtain optimum domain connectivity; however, it is tested only for geometry of generic shapes.

Efficient n-Doping and Hole Blocking in Single-Walled Carbon Nanotube Transistors with 1,2,4,5-Tetrakis(tetramethylguanidino)ben-zene.

PubMed

Schneider, Severin; Brohmann, Maximilian; Lorenz, Roxana; Hofstetter, Yvonne J; Rother, Marcel; Sauter, Eric; Zharnikov, Michael; Vaynzof, Yana; Himmel, Hans-Jörg; Zaumseil, Jana

2018-05-31

Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10 cm 2  V -1  s -1 ), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 10 8 , steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb 2+ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics.

Improvement of the photovoltaic parameters of perovskite solar cells using a reduced-graphene-oxide-modified titania layer and soluble copper phthalocyanine as a hole transporter.

PubMed

Nouri, Esmaiel; Mohammadi, Mohammad Reza; Xu, Zong-Xiang; Dracopoulos, Vassilios; Lianos, Panagiotis

2018-01-24

Functional perovskite solar cells can be made by using a simple, inexpensive and stable soluble tetra-n-butyl-substituted copper phthalocyanine (CuBuPc) as a hole transporter. In the present study, TiO 2 /reduced graphene oxide (T/RGO) hybrids were synthesized via an in situ solvothermal process and used as electron acceptor/transport mediators in mesoscopic perovskite solar cells based on soluble CuBuPc as a hole transporter and on graphene oxide (GO) as a buffer layer. The impact of the RGO content on the optoelectronic properties of T/RGO hybrids and on the solar cell performance was studied, suggesting improved electron transport characteristics and photovoltaic parameters. An enhanced electron lifetime and recombination resistance led to an increase in the short circuit current density, open circuit voltage and fill factor. The device based on a T/RGO mesoporous layer with an optimal RGO content of 0.2 wt% showed 22% higher photoconversion efficiency and higher stability compared with pristine TiO 2 -based devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blancon, Jean -Christophe Robert; Tsai, Hsinhan; Nie, Wanyi

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskitemore » layers. Furthermore, these states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.« less

Topological transitions in continuously deformed photonic crystals

NASA Astrophysics Data System (ADS)

Zhu, Xuan; Wang, Hai-Xiao; Xu, Changqing; Lai, Yun; Jiang, Jian-Hua; John, Sajeev

2018-02-01

We demonstrate that multiple topological transitions can occur, with high sensitivity, by continuous change of the geometry of a simple two-dimensional dielectric-frame photonic crystal consisting of circular air holes. By changing the radii of the holes and/or the distance between them, multiple transitions between normal and topological photonic band gaps (PBGs) can appear. The time-reversal symmetric topological PBGs resemble the quantum spin Hall insulator of electrons and have two counterpropagating edge states. We search for optimal topological transitions, i.e., sharp transitions sensitive to the geometry, and optimal topological PBGs, i.e., large PBGs with a clean spectrum of edge states. Such optimizations reveal that dielectric-frame photonic crystals are promising for optical sensors and unidirectional waveguides.

An efficient visible-light photocatalyst prepared by modifying AgBr particles with a small amount of activated carbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Desong, E-mail: dswang06@126.com; Zhao, Mangmang; Luo, Qingzhi

2016-04-15

Highlights: • An efficient visible-light photocatalyst was prepared by modifying AgBr particles. • A small amount of activated carbon was used to modify AgBr particles. • The modified AgBr exhibited improved visible-light photocatalytic performances. - Abstract: An efficient visible-light photocatalyst was successfully prepared by modifying AgBr particles with a small amount of activated carbon (AC) via a simple chemical precipitation approach. The AC/AgBr composite was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis diffuse reflection spectroscopy, photoluminescence spectroscopy, electrochemical impedance spectroscopy. The photocatalytic performances of the AC/AgBr composite were investigated by evaluating photodegradation of methyl orange (MO)more » and phenol under visible light irradiation, and the effects of the AC content in the composite, concentrations of AC/AgBr composite and MO, carrier scavengers on MO photodegradation rate were systematically investigated. The results indicated that the modification of AC can hardly change the crystalline and crystal size of AgBr particles, while significantly improve their specific surface areas, visible-light absorption and separation efficiency of photogenerated electron–hole pairs. Compared with pure AgBr, the AC/AgBr composite exhibited drastically enhanced visible-light photocatalytic activity and stability. The photogenerated electrons and holes, hydroxyl radicals are responsible to the photodegradation of organic pollutants, and the photogenerated holes are the main active species. On the basis of the results and the properties of AC and AgBr, the visible-light photocatalytic mechanism of the AC/AgBr composite was discussed.« less

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

Linked-cluster formulation of electron-hole interaction kernel in real-space representation without using unoccupied states.

PubMed

Bayne, Michael G; Scher, Jeremy A; Ellis, Benjamin H; Chakraborty, Arindam

2018-05-21

Electron-hole or quasiparticle representation plays a central role in describing electronic excitations in many-electron systems. For charge-neutral excitation, the electron-hole interaction kernel is the quantity of interest for calculating important excitation properties such as optical gap, optical spectra, electron-hole recombination and electron-hole binding energies. The electron-hole interaction kernel can be formally derived from the density-density correlation function using both Green's function and TDDFT formalism. The accurate determination of the electron-hole interaction kernel remains a significant challenge for precise calculations of optical properties in the GW+BSE formalism. From the TDDFT perspective, the electron-hole interaction kernel has been viewed as a path to systematic development of frequency-dependent exchange-correlation functionals. Traditional approaches, such as MBPT formalism, use unoccupied states (which are defined with respect to Fermi vacuum) to construct the electron-hole interaction kernel. However, the inclusion of unoccupied states has long been recognized as the leading computational bottleneck that limits the application of this approach for larger finite systems. In this work, an alternative derivation that avoids using unoccupied states to construct the electron-hole interaction kernel is presented. The central idea of this approach is to use explicitly correlated geminal functions for treating electron-electron correlation for both ground and excited state wave functions. Using this ansatz, it is derived using both diagrammatic and algebraic techniques that the electron-hole interaction kernel can be expressed only in terms of linked closed-loop diagrams. It is proved that the cancellation of unlinked diagrams is a consequence of linked-cluster theorem in real-space representation. The electron-hole interaction kernel derived in this work was used to calculate excitation energies in many-electron systems and results were found to be in good agreement with the EOM-CCSD and GW+BSE methods. The numerical results highlight the effectiveness of the developed method for overcoming the computational barrier of accurately determining the electron-hole interaction kernel to applications of large finite systems such as quantum dots and nanorods.

Electron-phonon coupling in superconducting β-PdBi{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini, E-mail: sharma.yamini62@gmail.com

2015-06-24

We have studied the electronic, transport and vibrational properties of low temperature superconductor β-PdBi{sub 2}. The band manifold clearly demonstrates the 2D-layered structure with multiple gaps. The intersection of bands at E{sub F} in the Γ-P, Γ-N directions gives rise to complicated Fermi surface topology, which contains quite complicated multiple connected sheets, as well as hole and electron-like pockets. From the low temperature specific heat, we have estimated the electron-phonon coupling constant λ{sub el-ph} which has a very high value of 3.66. The vibrational properties clearly illustrates that the strong coupling makes the lattice unstable. The calculated properties confirm thatmore » β-PdBi{sub 2} is an intermediate coupling superconductor.« less

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

NASA Astrophysics Data System (ADS)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Improved efficiency in blue phosphorescent organic light-emitting diodes by the stepwise doping structure

NASA Astrophysics Data System (ADS)

Yang, Liping; Wang, Xiaoping; Kou, Zhiqi; Ji, Changyan

2017-04-01

The electro-optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the stepwise doping structure in the emitting layer (EML). A series of multi-EML devices with different doping concentration of blue dopant (FIrpic) are fabricated. The effect of the stepwise doping structure close to the electron transport layer is more obvious than that close to the hole transport layer. When the doping concentration increases gradually from the hole injection side to the electron injection side, the maximum values of the luminance, current and power efficiency can reach to 9745 cd/m2 (at 9 V), 32.0 cd/A and 25.1 lm/W in the device with the asymmetric tri-EML structure, which is improved by about 10% compared with that in the bi-EML device. When the number of the EML is four, the performance of the device becomes worse because of the interface effect resulting from different concentration of dopant.

Solution-processed small molecules as mixed host for highly efficient blue and white phosphorescent organic light-emitting diodes.

PubMed

Fu, Qiang; Chen, Jiangshan; Shi, Changsheng; Ma, Dongge

2012-12-01

The widely used hole-transporting host 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA) blended with either a hole-transporting or an electron-transporting small-molecule material as a mixed-host was investigated in the phosphorescent organic light-emitting diodes (OLEDs) fabricated by the low-cost solution-process. The performance of the solution-processed OLEDs was found to be very sensitive to the composition of the mixed-host systems. The incorporation of the hole-transporting 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) into TCTA as the mixed-host was demonstrated to greatly reduce the driving voltage and thus enhance the efficiency due to the improvement of hole injection and transport. On the basis of the mixed-host of TCTA:TAPC, we successfully fabricated low driving voltage and high efficiency blue and white phosphorescent OLEDs. A maximum forward viewing current efficiency of 32.0 cd/A and power efficiency of 25.9 lm/W were obtained in the optimized mixed-host blue OLED, which remained at 29.6 cd/A and 19.1 lm/W at the luminance of 1000 cd/m(2) with a driving voltage as low as 4.9 V. The maximum efficiencies of 37.1 cd/A and 32.1 lm/W were achieved in a single emissive layer white OLED based on the TCTA:TAPC mixed-host. Even at 1000 cd/m(2), the efficiencies still reach 34.2 cd/A and 23.3 lm/W and the driving voltage is only 4.6 V, which is comparable to those reported from the state-of-the-art vacuum-evaporation deposited white OLEDs.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

Inflatable straddle packers and associated equipment for hydraulic fracturing and hydrologic testing

USGS Publications Warehouse

Shuter, Eugene; Pemberton, Robert R.

1978-01-01

Independent aquifer testing is the only way to fully understand the hydrology encountered in boreholes intersecting multiple aquifers. The most feasible method to accomplish the testing of multiple aquifer wells is through the use inflatable packers. The straddle packers and associated equipment herein described arE valuable tools for making isolated aquifer tests as well as conducting hydraulic fracturing experiments. The system, due to design, permits multiple tests in a bore-hole without the necessity of tripping in and out of the hole to redress the packers prior to testing each zone. Electronic pressure transducers, the output of which was fed into strip-chart recorders, were used to monitor the zone being tested, as well as to monitor the zones above and below the packers. This was necessary to ensure that no leaking had occurred around the packers, causing hydraulic continuity between the isolated zones.

Interfacial electronic structures revealed at the rubrene/CH3NH3PbI3 interface.

PubMed

Ji, Gengwu; Zheng, Guanhaojie; Zhao, Bin; Song, Fei; Zhang, Xiaonan; Shen, Kongchao; Yang, Yingguo; Xiong, Yimin; Gao, Xingyu; Cao, Liang; Qi, Dong-Chen

2017-03-01

The electronic structures of rubrene films deposited on CH 3 NH 3 PbI 3 perovskite have been investigated using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). It was found that rubrene molecules interacted weakly with the perovskite substrate. Due to charge redistribution at their interface, a downward 'band bending'-like energy shift of ∼0.3 eV and an upward band bending of ∼0.1 eV were identified at the upper rubrene side and the CH 3 NH 3 PbI 3 substrate side, respectively. After the energy level alignment was established at the rubrene/CH 3 NH 3 PbI 3 interface, its highest occupied molecular orbital (HOMO)-valence band maximum (VBM) offset was found to be as low as ∼0.1 eV favoring the hole extraction with its lowest unoccupied molecular orbital (LUMO)-conduction band minimum (CBM) offset as large as ∼1.4 eV effectively blocking the undesired electron transfer from perovskite to rubrene. As a demonstration, simple inverted planar solar cell devices incorporating rubrene and rubrene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layers (HTLs) were fabricated in this work and yielded a champion power conversion efficiency of 8.76% and 13.52%, respectively. Thus, the present work suggests that a rubrene thin film could serve as a promising hole transport layer for efficient perovskite-based solar cells.

Effects of electron transport material on blue organ light-emitting diode with fluorescent dopant of BCzVBi.

PubMed

Meng, Mei; Song, Wook; Kim, You-Hyun; Lee, Sang-Youn; Jhun, Chul-Gyu; Zhu, Fu Rong; Ryu, Dae Hyun; Kim, Woo-Young

2013-01-01

High efficiency blue organic light emitting diodes (OLEDs), based on 2-me-thyl-9,10-di(2-naphthyl) anthracene (MADN) doped with 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl (BCzVBi), were fabricated using two different electron transport layers (ETLs) of tris(8-hydroxyquinolino)-aluminum (Alq3) and 4,7-di-phenyl-1,10-phenanthroline (Bphen). Bphen ETL layers favored the efficient hole-electron recombination in the emissive layer of the BCzVBi-doped blue OLEDs, leading to high luminous efficiency and quantum efficiency of 8.34 cd/A at 100 mA/cm2 and 5.73% at 100 cd/m2, respectively. Maximum luminance of blue OLED with Bphen ETL and Alq3 ETL were 10670 cd/m2, and CIExy coordinates of blue OLEDs were (0.180, 0279) and (0.155, 0.212) at 100 cd/m2.

Generation of Electron Whistler Waves at the Mirror Mode Magnetic Holes: MMS Observations and PIC Simulation

NASA Astrophysics Data System (ADS)

Ahmadi, N.; Wilder, F. D.; Usanova, M.; Ergun, R.; Argall, M. R.; Goodrich, K.; Eriksson, S.; Germaschewski, K.; Torbert, R. B.; Lindqvist, P. A.; Le Contel, O.; Khotyaintsev, Y. V.; Strangeway, R. J.; Schwartz, S. J.; Giles, B. L.; Burch, J.

2017-12-01

The Magnetospheric Multiscale (MMS) mission observed electron whistler waves at the center and at the gradients of magnetic holes on the dayside magnetosheath. The magnetic holes are nonlinear mirror structures which are anti-correlated with particle density. We used expanding box Particle-in-cell simulations and produced the mirror instability magnetic holes. We show that the electron whistler waves can be generated at the gradients and the center of magnetic holes in our simulations which is in agreement with MMS observations. At the nonlinear regime of mirror instability, the proton and electron temperature anisotropy are anti-correlated with the magnetic hole. The plasma is unstable to electron whistler waves at the minimum of the magnetic field structures. In the saturation regime of mirror instability, when magnetic holes are dominant, electron temperature anisotropy develops at the edges of the magnetic holes and electrons become isotropic at the magnetic field minimum. We investigate the possible mechanism for enhancing the electron temperature anisotropy and analyze the electron pitch angle distributions and electron distribution functions in our simulations and compare it with MMS observations.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

DOE PAGES

Lu, Luyao; Chen, Wei; Xu, Tao; ...

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increasedmore » hole extraction, efficient energy transfer and better morphology. As a result, the working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.« less

Hole trap formation in polymer light-emitting diodes under current stress

NASA Astrophysics Data System (ADS)

Niu, Quan; Rohloff, Roland; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.; Crǎciun, N. Irina

2018-06-01

Polymer light-emitting diodes (PLEDs) are attractive for use in large-area displays and lighting panels, but their limited stability under current stress impedes commercialization. In spite of large efforts over the last two decades a fundamental understanding of the degradation mechanisms has not been accomplished. Here we demonstrate that the voltage drift of a PLED driven at constant current is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. The observed trap formation rate is consistent with exciton-free hole interactions as the main mechanism behind PLED degradation, enabling us to unify the degradation behaviour of various poly(p-phenylene) derivatives. The knowledge that hole trap formation is the cause of PLED degradation means that we can suppress the negative effect of hole traps on voltage and efficiency by blending the light-emitting polymer with a large-bandgap semiconductor. Owing to trap-dilution these blended PLEDs show unprecedented stability.

Novel High Efficient Organic Photovoltaic Materials: Appendix for Summary of Research. Appendix

NASA Technical Reports Server (NTRS)

Sun, Sam

2002-01-01

There are many different kinds of conjugated polymers that may be useful in photovoltaic devices. So far, the most popular and successful conjugated polymers used in photovoltaic devices include poly(1,4-)phenylenevinylenes (PPV), C60 and their derivatives. The discovery of electro-luminescence in PPV has stimulated a great deal of interest in developing "plastic" solid-state semiconductor devices. The overall synthetic methodology for the preparation of PPV can be divided into three main categories: (1) side chain derivatization, (2) precursor approach, and (3) in-situ polymerization. In this project, the first method was adopted. As discussed in project proposal and literatures, the overall efficiency of photovoltaic devices containing conjugated polymers is determined by the materials ability to generate excitons from incoming radiation, and then to separate the charges at donor/acceptor interfaces, and then to transport charges to respective electrodes. Given that effective exciton diffusion range are typical less then 30 nm, unique morphological structures are needed. This need led to several research groups to the idea that interpenetrating or bi-continuous networks of donor (electron donating) and acceptor (electron withdrawing) polymers should give better results. One approach involved the use of functionalized PPV. The attachment of electron withdrawing cyano groups to a PPV forms the CN-PPV, making it a strong electron acceptor. Underivatized PPV is a generally considered a hole-transporting material. Using blends of MEH-PPV, a soluble donor PPV derivative, as a hole transporter and CN-PPV as an electron transporter, a quantum efficiencies of up to 6% was achieved.

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron-Hole Pair Excitation.

PubMed

Kirschner, Matthew S; Hannah, Daniel C; Diroll, Benjamin T; Zhang, Xiaoyi; Wagner, Michael J; Hayes, Dugan; Chang, Angela Y; Rowland, Clare E; Lethiec, Clotilde M; Schatz, George C; Chen, Lin X; Schaller, Richard D

2017-09-13

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts related to heating and peak amplitude reduction associated with lattice disordering are observed. For smaller NCs, melting initiates upon absorption of as few as ∼15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5 nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structures following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. These findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Role of Adsorbed Water on Charge Carrier Dynamics in Photoexcited TiO2

PubMed Central

2017-01-01

Overall photocatalytic water splitting is one of the most sought after processes for sustainable solar-to-chemical energy conversion. The efficiency of this process strongly depends on charge carrier recombination and interaction with surface adsorbates at different time scales. Here, we investigated how hydration of TiO2 P25 affects dynamics of photogenerated electrons at the millisecond to minute time scale characteristic for chemical reactions. We used rapid scan diffuse-reflectance infrared Fourier transform spectroscopy (DRIFTS). The decay of photogenerated electron absorption was substantially slower in the presence of associated water. For hydrated samples, the charge carrier recombination rates followed an Arrhenius-type behavior in the temperature range of 273–423 K; these became temperature-independent when the material was dehydrated at temperatures above 423 K or cooled below 273 K. A DFT+U analysis revealed that hydrogen bonding with adsorbed water stabilizes surface-trapped holes at anatase TiO2(101) facet and lowers the barriers for hole migration. Hence, hole mobility should be higher in the hydrated material than in the dehydrated system. This demonstrates that adsorbed associated water can efficiently stabilize photogenerated charge carriers in nanocrystalline TiO2 and suppress their recombination at the time scale up to minutes. PMID:28413570

Integrated Flexible Electronic Devices Based on Passive Alignment for Physiological Measurement

PubMed Central

Ryu, Jin Hwa; Byun, Sangwon; Baek, In-Bok; Lee, Bong Kuk; Jang, Won Ick; Jang, Eun-Hye; Kim, Ah-Yung; Yu, Han Yung

2017-01-01

This study proposes a simple method of fabricating flexible electronic devices using a metal template for passive alignment between chip components and an interconnect layer, which enabled efficient alignment with high accuracy. An electrocardiogram (ECG) sensor was fabricated using 20 µm thick polyimide (PI) film as a flexible substrate to demonstrate the feasibility of the proposed method. The interconnect layer was fabricated by a two-step photolithography process and evaporation. After applying solder paste, the metal template was placed on top of the interconnect layer. The metal template had rectangular holes at the same position as the chip components on the interconnect layer. Rectangular hole sizes were designed to account for alignment tolerance of the chips. Passive alignment was performed by simply inserting the components in the holes of the template, which resulted in accurate alignment with positional tolerance of less than 10 µm based on the structural design, suggesting that our method can efficiently perform chip mounting with precision. Furthermore, a fabricated flexible ECG sensor was easily attachable to the curved skin surface and able to measure ECG signals from a human subject. These results suggest that the proposed method can be used to fabricate epidermal sensors, which are mounted on the skin to measure various physiological signals. PMID:28420219

Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

NASA Technical Reports Server (NTRS)

Hubbard, S. M.; Tabib-Azar, M.; Balley, S.; Rybickid, G.; Neudeck, P.; Raffaelle, R.

2004-01-01

Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

Exploring the potential of boron-doped nanographene as efficient charge transport and nonlinear optical material: A first-principles study.

PubMed

Irfan, Ahmad; Chaudhry, Aijaz Rasool; Muhammad, Shabbir; Al-Sehemi, Abdullah G

2017-08-01

Owing to their excellent electrochemical properties, graphenes found applications in several fields ranging from semiconductors, solar cells, field effect transistors, and nanoscale electronic devices as well as in nonlinear optical (NLO) applications. The structural features, electro-optical, charge transport and nonlinear optical properties of the boron-doped graphene (BG) compound 1 were studied using density functional theory methods The BG compound comprises a central electron deficient site of boron atoms, which can serve as electron acceptor while terminal alkoxy groups as donors leading to powerful donor-π-acceptor (D-π-A) configuration. The experimental crystal structure was successfully reproduced by optimized ground state geometry at PBE0/6-311G* level of theory for isolated molecule. The experimental lattice parameters, geometries, crystal presentation and alignment of molecules in the unit cells as well as their packing orientation of BG compound 1 was also efficiently reproduced by applying periodic boundary conditions (PBC) at PBE level. The comprehensive intramolecular charge transfer (CT) was realized from terminal rings of the HOMO to the electron deficient sites of boron atoms of the LUMO. The nature of BG compound 1 might be more towards hole transport even though its hole reorganization energy is twice than that of the electron one due to the significant higher hole transfer integral values. The superior hole transfer integrals and intrinsic mobility values of the BG compound 1 might lead remarkable hole transport contender as compared to many other organic materials. The narrow band gap, density of states profile, dielectric function, uniform conductivity functions and noteworthy electronic as well as CT properties revealed that the BG compound 1 might be proficient optoelectronic contestant having intermolecular CT as well as intramolecular CT with optimal stability. A comparison of static third-order polarizability <γ> of BG compound 1, as calculated in present investigation, was also performed with some standard NLO molecules as well as graphene nanoflakes. Moreover, longitudinal component γ zzzz of parent compound has been found 12 and 4 times larger than those of previously reported open-shell poly aromatic hydrocarbons (PAH). Interestingly, by increasing the donor ability, i.e., introduction of C 2 H 2 PhNH 2 groups in place of OC 4 H 9 groups (BG compound 3) at terminal positions boosts the <γ> amplitude∼8 times than that of its parent BG compound 1. Copyright © 2017 Elsevier Inc. All rights reserved.

Device Engineering and Degradation Mechanism Study of All-Phosphorescent White Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Xu, Lisong

As a possible next-generation solid-state lighting source, white organic light-emitting diodes (WOLEDs) have the advantages in high power efficiency, large area and flat panel form factor applications. Phosphorescent emitters and multiple emitting layer structures are typically used in high efficiency WOLEDs. However due to the complexity of the device structure comprising a stack of multiple layers of organic thin films, ten or more organic materials are usually required, and each of the layers in the stack has to be optimized to produce the desired electrical and optical functions such that collectively a WOLED of the highest possible efficiency can be achieved. Moreover, device degradation mechanisms are still unclear for most OLED systems, especially blue phosphorescent OLEDs. Such challenges require a deep understanding of the device operating principles and materials/device degradation mechanisms. This thesis will focus on achieving high-efficiency and color-stable all-phosphorescent WOLEDs through optimization of the device structures and material compositions. The operating principles and the degradation mechanisms specific to all-phosphorescent WOLED will be studied. First, we investigated a WOLED where a blue emitter was based on a doped mix-host system with the archetypal bis(4,6-difluorophenyl-pyridinato-N,C2) picolinate iridium(III), FIrpic, as the blue dopant. In forming the WOLED, the red and green components were incorporated in a single layer adjacent to the blue layer. The WOLED efficiency and color were optimized through variations of the mixed-host compositions to control the electron-hole recombination zone and the dopant concentrations of the green-red layers to achieve a balanced white emission. Second, a WOLED structure with two separate blue layers and an ultra-thin red and green co-doped layer was studied. Through a systematic investigation of the placement of the co-doped red and green layer between the blue layers and the material compositions of these layers, we were able to achieve high-efficiency WOLEDs with controllable white emission characteristics. We showed that we can use the ultra-thin co-doped layer and two blue emitting layers to manipulate exciton confinement to certain zones and energy transfer pathways between the various hosts and dopants. Third, a blue phosphorescent dopant tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (Ir(iprpmi)3) with a low ionization potential (HOMO 4.8 eV) and propensity for hole-trapping was studied in WOLEDs. In a bipolar host, 2,6-bis(3-(carbazol-9-yl)phenyl)-pyridine (DCzPPy), Ir(iprpmi)3 was found to trap holes at low concentrations but transport holes at higher concentrations. By adjusting the dopant concentration and thereby the location of the recombination zone, we were able to demonstrate blue and white OLEDs with external quantum efficiencies over 20%. The fabricated WOLEDs shows high color stability over a wide range of luminance. Moreover, the device lifetime has also been improved with Ir(iprpmi)3 as the emitter compared to FIrpic. Last, we analyzed OLED degradation using Laser Desorption Time-Of-Flight Mass Spectrometry (LDI-TOF-MS) technique. By carefully and systematically comparing the LDI-TOF patterns of electrically/optically stressed and controlled (unstressed) OLED devices, we were able to identify some prominent degradation byproducts and trace possible chemical pathways involving specific host and dopant materials.

A Coulomb explosion strategy to tailor the nano-architecture of α-MoO3 nanobelts and an insight into its intrinsic mechanism.

PubMed

Zhang, Junli; Zhu, Liu; Yang, Yu; Yong, Huadong; Zhang, Junwei; Peng, Yong; Fu, Jiecai

2018-05-03

Tailoring the nanoarchitecture of materials is significant for the development of nanoscience and nanotechnology. To date, one of the most powerful strategies is convergent electron beam irradiation (EBI). However, only two main functions of knock-on or atomic displacement have been achieved to date. In this study, a Coulomb explosion phenomenon was found to occur in α-MoO3 nanobelts (NBs) under electron beam irradiation, which was controllable and could be used to efficiently create nanostructures such as holes, gaps, and other atomic/nanometer patterns on a single α-MoO3 NB. Theoretical simulations starting from the charging state, charging rate to the threshold time of Coulomb explosion reveal that the Coulomb explosion phenomenon should result from positive charging. The results also show that the multiple charged regions are quickly fragmented, and the monolayered α-MoO3 pieces can then be peeled off once the Coulombic repulsion is sufficient to break the Mo-O bonds in the crystalline structure. It is believed that this efficient and versatile strategy may open up a new avenue to tailor α-MoO3 NBs or other kind of transition metal dichalcogenides via the Coulomb explosion effect.

Particle Acceleration in Active Galactic Nuclei

NASA Technical Reports Server (NTRS)

Miller, James A.

1997-01-01

The high efficiency of energy generation inferred from radio observations of quasars and X-ray observations of Seyfert active galactic nuclei (AGNs) is apparently achieved only by the gravitational conversion of the rest mass energy of accreting matter onto supermassive black holes. Evidence for the acceleration of particles to high energies by a central engine is also inferred from observations of apparent superluminal motion in flat spectrum, core-dominated radio sources. This phenomenon is widely attributed to the ejection of relativistic bulk plasma from the nuclei of active galaxies, and accounts for the existence of large scale radio jets and lobes at large distances from the central regions of radio galaxies. Reports of radio jets and superluminal motion from galactic black hole candidate X-ray sources indicate that similar processes are operating in these sources. Observations of luminous, rapidly variable high-energy radiation from active galactic nuclei (AGNs) with the Compton Gamma Ray Observatory show directly that particles are accelerated to high energies in a compact environment. The mechanisms which transform the gravitational potential energy of the infalling matter into nonthermal particle energy in galactic black hole candidates and AGNs are not conclusively identified, although several have been proposed. These include direct acceleration by static electric fields (resulting from, for example, magnetic reconnection), shock acceleration, and energy extraction from the rotational energy of Kerr black holes. The dominant acceleration mechanism(s) operating in the black hole environment can only be determined, of course, by a comparison of model predictions with observations. The purpose of the work proposed for this grant was to investigate stochastic particle acceleration through resonant interactions with plasma waves that populate the magnetosphere surrounding an accreting black hole. Stochastic acceleration has been successfully applied to the problem of ion and electron energization in solar flares, and is capable of accounting for a wide range of both neutral and charged particle emissions. It is also a component in diffusive shock acceleration, since pitch-angle scattering (which is necessary for multiple shock crossings) is accompanied by diffusion in momentum space, which in turn yields a net systematic energy gain; however, stochastic energization will dominate the first-order shock process only in certain parameter regimes. Although stochastic acceleration has been applied to particle energization in the lobes of radio galaxies, its application to the central regions of AGNs has only recently been considered, but not in detail. We proposed to systematically investigate the plasma processes responsible for stochastic particle acceleration in black hole magnetospheres along with the energy-loss processes which impede particle energization. To this end we calculated acceleration rates and escape time scales for protons and electrons resonating with Alfven waves, and for electrons resonating with whistlers. Assuming either a Kolmogorov or Kraichnan wave spectrum, accretion at the Eddington limit, magnetic field strengths near equipartition, and turbulence energy densities approx. 10% of the total magnetic field energy density, we find that Alfven waves accelerate protons to Lorentz factors approx, equals 10(exp 4) - 10(exp 6) before they escape from the system. Acceleration of electrons by fast mode and whistler waves can produce a nonthermal population of relativistic electrons whose maximum energy is determined by a competition with radiation losses.

Breaking the barriers of all-polymer solar cells: Solving electron transporter and morphology problems

NASA Astrophysics Data System (ADS)

Gavvalapalli, Nagarjuna

All-polymer solar cells (APSC) are a class of organic solar cells in which hole and electron transporting phases are made of conjugated polymers. Unlike polymer/fullerene solar cell, photoactive material of APSC can be designed to have hole and electron transporting polymers with complementary absorption range and proper frontier energy level offset. However, the highest reported PCE of APSC is 5 times less than that of polymer/fullerene solar cell. The low PCE of APSC is mainly due to: i) low charge separation efficiency; and ii) lack of optimal morphology to facilitate charge transfer and transport; and iii) lack of control over the exciton and charge transport in each phase. My research work is focused towards addressing these issues. The charge separation efficiency of APSC can be enhanced by designing novel electron transporting polymers with: i) broad absorption range; ii) high electron mobility; and iii) high dielectric constant. In addition to with the above parameters chemical and electronic structure of the repeating unit of conjugated polymer also plays a role in charge separation efficiency. So far only three classes of electron transporting polymers, CN substituted PPV, 2,1,3-benzothiadiazole derived polymers and rylene diimide derived polymers, are used in APSC. Thus to enhance the charge separation efficiency new classes of electron transporting polymers with the above characteristics need to be synthesized. I have developed a new straightforward synthetic strategy to rapidly generate new classes of electron transporting polymers with different chemical and electronic structure, broad absorption range, and high electron mobility from readily available electron deficient monomers. In APSCs due to low entropy of mixing, polymers tend to micro-phase segregate rather than forming the more useful nano-phase segregation. Optimizing the polymer blend morphology to obtain nano-phase segregation is specific to the system under study, time consuming, and not trivial. Thus to avoid micro-phase segregation, nanoparticles of hole and electron transporters are synthesized and blended. But the PCE of nanoparticle blends are far less than those of polymer blends. This is mainly due to the: i) lack of optimal assembly of nanoparticles to facilitate charge transfer and transport processes; and ii) lack of control over the exciton and charge transport properties within the nanoparticles. Polymer packing within the nanoparticle controls the optoelectronic and charge transport properties of the nanoparticle. In this work I have shown that the solvent used to synthesize nanoparticles plays a crucial role in determining the assembly of polymer chains inside the nanoparticle there by affecting its exciton and charge transport processes. To obtain the optimal morphology for better charge transfer and transport, we have also synthesized nanoparticles of different radius with surfactants of opposite charge. We propose that depending on the radius and/or Coulombic interactions these nanoparticles can be assembled into mineral structure-types that are useful for photovoltaic devices.

Molecularly "engineered" anode adsorbates for probing OLED interfacial structure-charge injection/luminance relationships: large, structure-dependent effects.

PubMed

Huang, Qinglan; Evmenenko, Guennadi; Dutta, Pulak; Marks, Tobin J

2003-12-03

Molecule-scale structure effects at organic light-emitting diodes (OLED) anode-organic transport layer interfaces are probed via a self-assembly approach. A series of ITO anode-linked silyltriarylamine molecules differing in aryl group and linker density are synthesized for this purpose and used to probe the relationship between nanoscale interfacial chemical structure, charge injection and electroluminescence properties. Dramatic variations in hole injection magnitude and OLED performance can be correlated with the molecular structures and electrochemically derived heterogeneous electron-transfer rates of such triarylamine fragments, placed precisely at the anode-hole transport layer interface. Very bright and efficient ( approximately 70 000 cd/m2 and approximately 2.5% forward external quantum efficiency) OLEDs have thereby been fabricated.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Ying; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ; Yaacobi-Gross, Nir

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronicmore » devices.« less

Role of Near Substrate and Bulk Polymer Morphology on Out-of-Plane Space-Charge Limited Hole Mobility.

PubMed

Turner, Johnathan; Gadisa, Abay

2016-12-07

Charge transport is a central issue in all types of organic electronic devices. In organic films, charge transport is crucially limited by film microstructure and the nature of the substrate/organic interface interactions. In this report, we discuss the influence of active layer thickness on space-charge limited hole transport in pristine polymer and polymer/fullerene bulk heterojunction thin films (∼15-300 nm) in a diode structure. According to the results, the out-of-plane hole mobility in pristine polymers is sensitive to the degree of polymer chain aggregation. Blending the polymers with a fullerene molecule does not change the trend of hole mobility if the polymer tends to make an amorphous structure. However, employing an aggregating polymer in a bulk heterojunction blend gives rise to a marked difference in charge carrier transport behavior compared to the pristine polymer and this difference is sensitive to active layer thickness. In aggregating polymer films, the thickness-dependent interchain interaction was found to have direct impact on hole mobility. The thickness-dependent mobility trend was found to correspond well with the trend of fill factors of corresponding bulk heterojunction solar cells. This investigation has a vital implication for material design and the development of efficient organic electronic devices, including solar cells and light-emitting diodes.

Tuning the relative concentration ratio of bulk defects to surface defects in TiO2 nanocrystals leads to high photocatalytic efficiency.

PubMed

Kong, Ming; Li, Yuanzhi; Chen, Xiong; Tian, Tingting; Fang, Pengfei; Zheng, Feng; Zhao, Xiujian

2011-10-19

TiO(2) nanocrystals with tunable bulk/surface defects were synthesized and characterized with TEM, XRD, BET, positron annihilation, and photocurrent measurements. The effect of defects on photocatalytic activity was studied. It was found for the first time that decreasing the relative concentration ratio of bulk defects to surface defects in TiO(2) nanocrystals could significantly improve the separation efficiency of photogenerated electrons and holes, thus significantly enhancing the photocatalytic efficiency.

Comparison of carrier multiplication yields in PbS and PbSe nanocrystals: the role of competing energy-loss processes.

PubMed

Stewart, John T; Padilha, Lazaro A; Qazilbash, M Mumtaz; Pietryga, Jeffrey M; Midgett, Aaron G; Luther, Joseph M; Beard, Matthew C; Nozik, Arthur J; Klimov, Victor I

2012-02-08

Infrared band gap semiconductor nanocrystals are promising materials for exploring generation III photovoltaic concepts that rely on carrier multiplication or multiple exciton generation, the process in which a single high-energy photon generates more than one electron-hole pair. In this work, we present measurements of carrier multiplication yields and biexciton lifetimes for a large selection of PbS nanocrystals and compare these results to the well-studied PbSe nanocrystals. The similar bulk properties of PbS and PbSe make this an important comparison for discerning the pertinent properties that determine efficient carrier multiplication. We observe that PbS and PbSe have very similar biexciton lifetimes as a function of confinement energy. Together with the similar bulk properties, this suggests that the rates of multiexciton generation, which is the inverse of Auger recombination, are also similar. The carrier multiplication yields in PbS nanocrystals, however, are strikingly lower than those observed for PbSe nanocrystals. We suggest that this implies the rate of competing processes, such as phonon emission, is higher in PbS nanocrystals than in PbSe nanocrystals. Indeed, our estimations for phonon emission mediated by the polar Fröhlich-type interaction indicate that the corresponding energy-loss rate is approximately twice as large in PbS than in PbSe. © 2011 American Chemical Society

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerisit, Sebastien N.; Gao, Fei; Xie, YuLong

This Final Report presents work carried out at Pacific Northwest National Laboratory (PNNL) under the project entitled “Validated Models for Radiation Response and Signal Generation in Scintillators” (Project number: PL10-Scin-theor-PD2Jf) and led by Drs. Fei Gao and Sebastien N. Kerisit. This project was divided into four tasks: 1) Electronic response functions (ab initio data model) 2) Electron-hole yield, variance, and spatial distribution 3) Ab initio calculations of information carrier properties 4) Transport of electron-hole pairs and scintillation efficiency Detailed information on the results obtained in each of the four tasks is provided in this Final Report. Furthermore, published peer-reviewed articlesmore » based on the work carried under this project are included in Appendix. This work was supported by the National Nuclear Security Administration, Office of Nuclear Nonproliferation Research and Development (DNN R&D/NA-22), of the U.S. Department of Energy (DOE).« less

An Efficient Distributed Coverage Hole Detection Protocol for Wireless Sensor Networks

PubMed Central

Kumar Sahoo, Prasan; Chiang, Ming-Jer; Wu, Shih-Lin

2016-01-01

In wireless sensor networks (WSNs), certain areas of the monitoring region may have coverage holes and serious coverage overlapping due to the random deployment of sensors. The failure of electronic components, software bugs and destructive agents could lead to the random death of the nodes. Sensors may be dead due to exhaustion of battery power, which may cause the network to be uncovered and disconnected. Based on the deployment nature of the nodes in remote or hostile environments, such as a battlefield or desert, it is impossible to recharge or replace the battery. However, the data gathered by the sensors are highly essential for the analysis, and therefore, the collaborative detection of coverage holes has strategic importance in WSNs. In this paper, distributed coverage hole detection algorithms are designed, where nodes can collaborate to detect the coverage holes autonomously. The performance evaluation of our protocols suggests that our protocols outperform in terms of hole detection time, limited power consumption and control packet overhead to detect holes as compared to other similar protocols. PMID:26999143

Organic solar cells based on high dielectric constant materials: An approach to increase efficiency

NASA Astrophysics Data System (ADS)

Hamam, Khalil Jumah Tawfiq

The efficiency of organic solar cells still lags behind inorganic solar cells due to their low dielectric constant which results in a weakly screened columbic attraction between the photogenerated electron-hole system, therefore the probability of charge separating is low. Having an organic material with a high dielectric constant could be the solution to get separated charges or at least weakly bounded electron-hole pairs. Therefore, high dielectric constant materials have been investigated and studied by measuring modified metal-phthalocyanine (MePc) and polyaniline in pellets and thin films. The dielectric constant was investigated as a function of temperature and frequency in the range of 20Hz to1MHz. For MePc we found that the high dielectric constant was an extrinsic property due to water absorption and the formation of hydronuim ion allowed by the ionization of the functional groups such as sulphonated and carboxylic groups. The dielectric constant was high at low frequencies and decreasing as the frequency increase. Investigated materials were applied in fabricated bilayer heterojunction organic solar cells. The application of these materials in an organic solar cells show a significant stability under room conditions rather than improvement in their efficiency.

The dynamics of energy and charge transfer in low and hyperthermal energy ion-solid interactions

NASA Astrophysics Data System (ADS)

Ray, Matthew Preston

The energy and charge transfer dynamics for low and hyperthermal energy (10 eV to 2 keV) alkali and noble gas ions impacting noble metals as a function of incident energy, species and scattering geometry has been studied. The experiments were performed in an ultra-high vacuum scattering chamber attached to a low and hyperthermal energy beamline. The energy transfer was measured for K+ scattered from a Ag(001) surface along the [110] crystalline direction at a fixed laboratory angle of 90°. It was found that as the incident energy is reduced from 100 to 10 eV, the normalized scattered energy increased. Previous measurements have shown a decrease in the normalized energy as the incident ion energy is reduced due to an attractive image force. Trajectory analysis of the data using a classical scattering simulation revealed that instead of undergoing sequential binary collisions as in previous studies, the ion scatters from two surface atoms simultaneously leading to an increased normalized energy. Additionally, charge transfer measurements have been performed for Na + scattering from Ag(001) along the [110] crystalline direction at a fixed laboratory angle of 70°. It was found that over the range of energies used (10 eV to 2 keV), the neutralization probability of the scattered ions varied from ˜30% to ˜70% depending on the incident velocity, consistent with resonant charge transfer. A fully quantum mechanical model that treats electrons independently accurately reproduces the observed data. Measurements of electron-hole pair excitations were used to explore the pathways which a solid uses to dissipate the energy imparted by the incident ion beam. Ultrathin film (10 nm) metal-oxide-semiconductor (Au/SiO2/n-Si) devices were used to detect the electron-hole pairs for cases when the ion deposited all of its translational energy into the solid. The incident ions were incident at an angle normal to the surface of the device to maximize energy deposition and consequently electron-hole pair production. The rectifying metal-oxide-semiconductor device separates the electrons from the holes, allowing a current associated with electron-hole pair production to be measured. In these experiments a number of ion species (He+, Li+ , Ar+, K+) were made incident on multiple devices and the incident energy ranged from 100 eV to 2 keV. It was found that electron-hole pair production increased with incident ion velocity consistent with a kinetic electron excitation model where the electrons in the metal are partially confined to the surface.

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.

2017-12-01

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through the emissive region by a drift-diffusion process which results in a highly non-uniform distribution of the light emission and can reduce efficiency. In this paper, the measured variations in the external quantum efficiency of a range of InGaN/GaN LEDs with different numbers of quantum wells (QWs) are shown to compare closely with the predictions of a revised ABC model, in which it is assumed that the electrically injected electrons and holes are uniformly distributed through the multi-quantum well (MQW) region, or nearly so, and hence carrier recombination occurs equally in all the quantum wells. The implications of the reported results are that drift-diffusion plays a far lesser role in cross-well carrier transport than previously thought; that the dominant cause of efficiency droop is intrinsic to the quantum wells and that reductions in the density of non-radiative recombination centers in the MQW would enable the use of more QWs and thereby reduce Auger losses by spreading carriers more evenly across a wider emissive region.

Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells

NASA Astrophysics Data System (ADS)

Monserrat, Bartomeu; Park, Ji-Sang; Kim, Sunghyun; Walsh, Aron

2018-05-01

The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to high rates of non-radiative electron-hole recombination. To probe the origin of this bottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming a weak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV for CZTSe/wurtzite-CdS. We also consider the effects of temperature on the band alignment, finding that increasing temperature significantly enhances the spike-type offset. We further resolve an outstanding discrepancy between the measured and calculated phonon frequencies for the kesterites, and use these to estimate the upper limit of electron and hole mobilities based on optic phonon Fröhlich scattering, which uncovers an intrinsic asymmetry with faster (minority carrier) electron mobility.

Study on isopropanol degradation by UV/TiO2 nanotube

NASA Astrophysics Data System (ADS)

Cheng, Hsiu-Yueh; Chang, Kai-Chau; Lin, Kae-Long; Ma, Chih-Ming

2018-04-01

When a semiconductor molecule absorbs photons with energy equal to or greater than its band-gap, electrons in the valence band can be excited and jump up into the conduction band and thus charge carriers are generated. When these charge carriers successfully migrate to the solid surface without recombining, the electrons and holes may undergo electron-transfer processes with adsorbates of suitable redox potentials. The photogenerated holes react with the water to produce hydroxyl radicals, while the photogenerated electrons react with molecular oxygen to give superoxide radical anions. These radicals so produced are highly reactive and they work together to completely oxidize the organic species. In this study, TiO2 nanotube has been prepared and was to be used to control acetone. In this work, mesoporous nanotubes by hydrothermal treatment in aqueous sodium hydroxide solution have been synthesized. Direct hydrothermal synthesis method is easy and efficient to synthesize titanate nanotubes. Using sodium hydroxide, the considerable decrease in reaction time and reaction temperature was achieved.

New Insights into Sensitization Mechanism of the Doped Ce (IV) into Strontium Titanate

PubMed Central

Wang, Yuan; Liu, Chenglun; Xu, Longjun

2018-01-01

SrTiO3 and Ce4+ doped SrTiO3 were synthesized by a modified sol–gel process. The optimization synthesis parameters were obtained by a series of single factor experiments. Interesting phenomena are observable in Ce4+ doped SrTiO3 systems. Sr2+ in SrTiO3 system was replaced by Ce4+, which reduced the surface segregation of Ti4+, ameliorated agglomeration, increased specific surface area more than four times compared with pure SrTiO3, and enhanced quantum efficiency for SrTiO3. Results showed that Ce4+ doping increased the physical adsorption of H2O and adsorbed oxygen on the surface of SrTiO3, which produced additional catalytic active centers. Electrons on the 4f energy level for Ce4+ produced new energy states in the band gap of SrTiO3, which not only realized the use of visible light but also led to an easier separation between the photogenerated electrons and holes. Ce4+ repeatedly captured photoelectrons to produce Ce3+, which inhibited the recombination between photogenerated electrons and holes as well as prolonged their lifetime; it also enhanced quantum efficiency for SrTiO3. The methylene blue (MB) degradation efficiency reached 98.7% using 3 mol % Ce4+ doped SrTiO3 as a photocatalyst, indicating highly photocatalytic activity. PMID:29690605

Achieving high efficiency laminated polymer solar cell with interfacial modified metallic electrode and pressure induced crystallization

NASA Astrophysics Data System (ADS)

Yuan, Yongbo; Bi, Yu; Huang, Jinsong

2011-02-01

We report efficient laminated organic photovoltaic device with efficiency approach the optimized device by regular method based on Poly(3-hexylthiophene-2,5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The high efficiency is mainly attributed to the formation of a concrete polymer/metal interface mechanically and electrically by the use of electronic-glue, and using the highly conductive and flexible silver film as anode to reduce photovoltage loss and modifying its work function for efficiency hole extraction by ultraviolet/ozone treatment, and the pressure induced crystallization of PCBM.

Quantum Dot Sensitized Solar Cells Based on TiO2/AgInS2

NASA Astrophysics Data System (ADS)

Pawar, Sachin A.; Jeong, Jae Pil; Patil, Dipali S.; More, Vivek M.; Lee, Rochelle S.; Shin, Jae Cheol; Choi, Won Jun

2018-05-01

Quantum dot heterojunctions with type-II band alignment can efficiently separate photogenerated electron-hole pairs and, hence, are useful for solar cell studies. In this study, a quantum dot sensitized solar cell (QDSSC) made of TiO2/AgInS2 is achieved to boost the photoconversion efficiency for the TiO2-based system by varying the AgInS2 layer's thickness. The TiO2 nanorods array film is prepared by using a simple hydrothermal technique. The formation of a AgInS2 QD-sensitized TiO2-nanorod photoelectrode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The effect of the QD layer on the performance of the solar cell is studied by varying the SILAR cycles of the QD coating. The synthesized electrode materials are characterized by using X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy and solar cell performances. The results indicate that the nanocrystals have effectively covered the outer surfaces of the TiO2 nanorods. The interfacial structure of quantum dots (QDs)/TiO2 is also investigated, and the growth interface is verified. A careful comparison between TiO2/AgInS2 sensitized cells reveals that the trasfer of electrons and hole proceeds efficiently, the recombination is suppressed for the optimum thickness of the QD layer and light from the entire visible spectrum is utilised. Under AM 1.5G illumination, a high photocurrent of 1.36 mAcm-2 with an improved power conversion efficiency of 0.48% is obtained. The solar cell properties of our photoanodes suggest that the TiO2 nanorod array films co-sensitized by AgInS2 nanoclusters have potential applications in solar cells.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86,more » and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.« less

Redox shuttle mechanism enhances photocatalytic H2 generation on Ni-decorated CdS nanorods

NASA Astrophysics Data System (ADS)

Simon, Thomas; Bouchonville, Nicolas; Berr, Maximilian J.; Vaneski, Aleksandar; Adrović, Asmir; Volbers, David; Wyrwich, Regina; Döblinger, Markus; Susha, Andrei S.; Rogach, Andrey L.; Jäckel, Frank; Stolarczyk, Jacek K.; Feldmann, Jochen

2014-11-01

Photocatalytic conversion of solar energy to fuels, such as hydrogen, is attracting enormous interest, driven by the promise of addressing both energy supply and storage. Colloidal semiconductor nanocrystals have been at the forefront of these efforts owing to their favourable and tunable optical and electronic properties as well as advances in their synthesis. The efficiency of the photocatalysts is often limited by the slow transfer and subsequent reactions of the photoexcited holes and the ensuing high charge recombination rates. Here we propose that employing a hydroxyl anion/radical redox couple to efficiently relay the hole from the semiconductor to the scavenger leads to a marked increase in the H2 generation rate without using expensive noble metal co-catalysts. The apparent quantum yield and the formation rate under 447 nm laser illumination exceeded 53% and 63 mmol g-1 h-1, respectively. The fast hole transfer confers long-term photostability on the system and opens new pathways to improve the oxidation side of full water splitting.

Organic electrophosphorescence device having interfacial layers

DOEpatents

Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

2010-08-10

Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

Molecular design of photovoltaic materials for polymer solar cells: toward suitable electronic energy levels and broad absorption.

PubMed

Li, Yongfang

2012-05-15

Bulk heterojunction (BHJ) polymer solar cells (PSCs) sandwich a blend layer of conjugated polymer donor and fullerene derivative acceptor between a transparent ITO positive electrode and a low work function metal negative electrode. In comparison with traditional inorganic semiconductor solar cells, PSCs offer a simpler device structure, easier fabrication, lower cost, and lighter weight, and these structures can be fabricated into flexible devices. But currently the power conversion efficiency (PCE) of the PSCs is not sufficient for future commercialization. The polymer donors and fullerene derivative acceptors are the key photovoltaic materials that will need to be optimized for high-performance PSCs. In this Account, I discuss the basic requirements and scientific issues in the molecular design of high efficiency photovoltaic molecules. I also summarize recent progress in electronic energy level engineering and absorption spectral broadening of the donor and acceptor photovoltaic materials by my research group and others. For high-efficiency conjugated polymer donors, key requirements are a narrower energy bandgap (E(g)) and broad absorption, relatively lower-lying HOMO (the highest occupied molecular orbital) level, and higher hole mobility. There are three strategies to meet these requirements: D-A copolymerization for narrower E(g) and lower-lying HOMO, substitution with electron-withdrawing groups for lower-lying HOMO, and two-dimensional conjugation for broad absorption and higher hole mobility. Moreover, better main chain planarity and less side chain steric hindrance could strengthen π-π stacking and increase hole mobility. Furthermore, the molecular weight of the polymers also influences their photovoltaic performance. To produce high efficiency photovoltaic polymers, researchers should attempt to increase molecular weight while maintaining solubility. High-efficiency D-A copolymers have been obtained by using benzodithiophene (BDT), dithienosilole (DTS), or indacenodithiophene (IDT) donor unit and benzothiadiazole (BT), thienopyrrole-dione (TPD), or thiazolothiazole (TTz) acceptor units. The BDT unit with two thienyl conjugated side chains is a highly promising unit in constructing high-efficiency copolymer donor materials. The electron-withdrawing groups of ester, ketone, fluorine, or sulfonyl can effectively tune the HOMO energy levels downward. To improve the performance of fullerene derivative acceptors, researchers will need to strengthen absorption in the visible spectrum, upshift the LUMO (the lowest unoccupied molecular orbital) energy level, and increase the electron mobility. [6,6]-Phenyl-C(71)-butyric acid methyl ester (PC(70)BM) is superior to [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) because C(70) absorbs visible light more efficiently. Indene-C(60) bisadduct (ICBA) and Indene-C(70) bisadduct (IC(70)BA) show 0.17 and 0.19 eV higher LUMO energy levels, respectively, than PCBM, due to the electron-rich character of indene and the effect of bisadduct. ICBA and IC(70)BA are excellent acceptors for the P3HT-based PSCs.

Plasma electron hole kinematics. I. Momentum conservation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutchinson, I. H.; Zhou, C.

We analyse the kinematic properties of a plasma electron hole: a non-linear self-sustained localized positive electric potential perturbation, trapping electrons, which behaves as a coherent entity. When a hole accelerates or grows in depth, ion and electron plasma momentum is changed both within the hole and outside, by an energization process we call jetting. We present a comprehensive analytic calculation of the momentum changes of an isolated general one-dimensional hole. The conservation of the total momentum gives the hole's kinematics, determining its velocity evolution. Our results explain many features of the behavior of hole speed observed in numerical simulations, includingmore » self-acceleration at formation, and hole pushing and trapping by ion streams.« less

Rational design of dipolar chromophore as an efficient dopant-free hole-transporting material for perovskite solar cells

DOE PAGES

Li, Zhong’an; Zhu, Zonglong; Chueh, Chu -Chen; ...

2016-08-23

In this paper, an electron donor-acceptor (D-A) substituted dipolar chromophore ( BTPA-TCNE) is developed to serve as an efficient dopant-free hole-transporting material (HTM) for perovskite solar cells (PVSCs). BTPA-TCNE is synthesized via a simple reaction between a triphenylamine-based Michler’s base and tetracyanoethylene. This chromophore possesses a zwitterionic resonance structure in the ground state, as evidenced by X-ray crystallography and transient absorption spectroscopies. Moreover, BTPA-TCNE shows an antiparallel molecular packing (i.e., centrosymmetric dimers) in its crystalline state, which cancels out its overall molecular dipole moment to facilitate charge transport. Finally, BTPA-TCNE can be employed as an effective dopant-free HTM to realizemore » an efficient (PCE ≈ 17.0%) PVSC in the conventional n-i-p configuration, outperforming the control device with doped spiro-OMeTAD HTM.« less

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sokolova, Z. N., E-mail: Zina.Sokolova@mail.ioffe.ru; Pikhtin, N. A.; Tarasov, I. S.

The operating characteristics of a semiconductor quantum-well laser calculated using three models are compared. These models are (i) a model not taking into account differences between the electron and hole parameters and using the electron parameters for both types of charge carriers; (ii) a model, which does not take into account differences between the electron and hole parameters and uses the hole parameters for both types of charge carriers; and (iii) a model taking into account the asymmetry between the electron and hole parameters. It is shown that, at the same velocity of electron and hole capture into an unoccupiedmore » quantum well, the laser characteristics, obtained using the three models, differ considerably. These differences are due to a difference between the filling of the electron and hole subbands in a quantum well. The electron subband is more occupied than the hole subband. As a result, at the same velocities of electron and hole capture into an empty quantum well, the effective electron-capture velocity is lower than the effective hole-capture velocity. Specifically, it is shown that for the laser structure studied the hole-capture velocity of 5 × 10{sup 5} cm/s into an empty quantum well and the corresponding electron-capture velocity of 3 × 10{sup 6} cm/s into an empty quantum well describe the rapid capture of these carriers, at which the light–current characteristic of the laser remains virtually linear up to high pump-current densities. However, an electron-capture velocity of 5 × 10{sup 5} cm/s and a corresponding hole-capture velocity of 8.4 × 10{sup 4} cm/s describe the slow capture of these carriers, causing significant sublinearity in the light–current characteristic.« less

Nanostructured organic/inorganic semicondutor photovoltaics: Investigation on morphology and optoelectronics performance

NASA Astrophysics Data System (ADS)

Wanninayake, Aruna Pushpa Kumara

Organic solar cell is a promising technology because of the versatility of organic materials in terms of tunability of their electrical and optical properties. In addition, their relative insensitivity to film imperfections potentially allows for very low-cost high-throughput roll-to-roll processing. However, the power conversion efficiency of organic solar cell is still limited and needs to be improved in order to be competitive with grid parity. This work is focused on the design and characterization of a new organic/inorganic hybrid device to enhance the efficiency factors of bilayer organic solar cells such as: light absorption, exciton diffusion, exciton dissociation, charge transportation and charge collection at the electrodes. In a hybrid solar cell operation, external quantum efficiency is determined by these five factors. The external quantum efficiency has linear relationship to the power conversation efficiency via short circuit current density. Bulk heterojunction (BHJ) PSCs benefit from a homogeneous donor-acceptor (D-A) contact interface compared to their inorganic counterpart. A homogenous D-A interface offers a longer free path for charge carriers, resulting in a longer diffusional pathway and a larger coulomb interaction between electrons and holes. This is triggered by the low dielectric constant of organic semiconductors. Among various conventional donor-acceptor structures, poly(3-hexylthiophene)/[6,6]-phenyl-C70-butyric acid methyl ester (P3HT/PCBM) mixture is the most promising and ideal donor-acceptor pair due to their unique properties. In order to take benefits from both organic and inorganic materials, inorganic nanoparticles are incorporated in this donor-acceptor polymer structure. Light trapping enhances light absorption and increases efficiencies with thinner device structure. In this study, copper oxide nanoparticles are used in the P3HT/PC70BM active layer to optimize the optical absorption properties in the blend. In addition, zinc oxide nanoparticles are used for tuning the conjugated polymer films due to their high electron accepting ability and optical absorption properties. In the zinc oxide structure, electrons exhibit higher mobility, which enhances the exciton dissociation efficiency. In addition, metal nanoparticles such as gold are added to the hole transport layer to enhance the overall hole transport ability. The optimum morphology of P3HT/PCBM films is described by two main features: 1) the molecular ordering within the donor or acceptor phase, which affects the photon absorption and carrier mobility; and 2) the scale of phase separation between the donor and the acceptor, which can directly influence the exciton dissociation and charge transport and/or collection processes. Hence, the molecular ordering and the phase separation between the donor and acceptor phases are crucial for solar cells with high efficiency. Optimization of the morphology of the organic/inorganic hybrid layers will be achieved via thermal annealing. The main goal of this work is to fabricate inorganic nanoparticles incorporated polymer PV devices with increased power conversion efficiency (PCE). This goal is achieved through four research objectives which are 1) enhancement of exciton generation and morphology by CuO NPs, 2) enhancement of exciton transportation and carrier diffusion by thermal annealing, 3) Improvement of exciton dissociation and electron mobility using ZnO NPs, and 4) improvement of hole collection ability using Au NPs. The key findings in this research can be applied to fabricate solar cells with higher power conversion efficiencies.

Low-energy plasma-cathode electron gun with a perforated emission electrode

NASA Astrophysics Data System (ADS)

Burdovitsin, Victor; Kazakov, Andrey; Medovnik, Alexander; Oks, Efim; Tyunkov, Andrey

2017-11-01

We describe research of influence of the geometric parameters of perforated electrode on emission parameters of a plasma cathode electron gun generating continuous electron beams at gas pressure 5-6 Pa. It is shown, that the emission current increases with increasing the hole diameters and decreasing the thickness of the perforated emission electrode. Plasma-cathode gun with perforated electron can provide electron extraction with an efficiency of up to 72 %. It is shown, that the current-voltage characteristic of the electron gun with a perforated emission electrode differs from that of similar guns with fine mesh grid electrode. The plasma-cathode electron gun with perforated emission electrode is used for electron beam welding and sintering.

Intraocular Gnathostoma spinigerum. Clinicopathologic study of two cases with review of literature.

PubMed

Biswas, J; Gopal, L; Sharma, T; Badrinath, S S

1994-01-01

Live intraocular nematode is a rare occurrence that is mostly reported in Southeast Asian countries. Common nematodes that are seen live in the eye are microfilaria, Gnathostoma, and Angiostrongylus. Approximately 12 cases of intraocular gnathostomiasis have been reported in the literature. Two cases of intraocular gnathostoma, removed by vitrectomy in the first case and by paracentesis in the second case, are reported. Morphologic study of the parasites in wet preparation was performed under dissecting microscope and fixed in Karnovosky's fixative. Light microscopic and scanning electron microscopic studies were also performed. The first patient had anterior uveitis, multiple iris holes, and dense vitreous haze with fibrous proliferation over the optic disc. On resolution of the vitreous haze, a live worm was seen in the vitreous cavity. The second patient had anterior uveitis with secondary glaucoma, multiple iris holes, mild vitritis, and focal subretinal haemorrhage with subretinal tracts. Four days later a live worm was seen in the anterior chamber and removed. Microscopic study of the parasites from both patients revealed typical head bulb with four circumferential rows of hooklets, and fine cuticular spines were seen on the surface of the body. Iris holes, uveitis, and subretinal haemorrhage with subretinal tract can be characteristic features of intraocular gnathostomiasis. Identification of this parasite can be made by typical features, which can be identified on light and scanning electron microscopic study.

Novel High Efficient Organic Photovoltaic Materials

NASA Technical Reports Server (NTRS)

Sun, Sam; Haliburton, James; Fan, Zben; Taft, Charles; Wang, Yi-Qing; Maaref, Shahin; Mackey, Willie R. (Technical Monitor)

2001-01-01

In man's mission to the outer space or a remote site, the most abundant, renewable, nonpolluting, and unlimited external energy source is light. Photovoltaic (PV) materials can convert light into electrical power. In order to generate appreciable electrical power in space or on the Earth, it is necessary to collect sunlight from large areas due to the low density of sunlight, and this would be very costly using current commercially available inorganic solar cells. Future organic or polymer based solar cells seemed very attractive due to several reasons. These include lightweight, flexible shape, ultra-fast optoelectronic response time (this also makes organic PV materials attractive for developing ultra-fast photo detectors), tunability of energy band-gaps via molecular design, versatile materials synthesis and device fabrication schemes, and much lower cost on large-scale industrial production. It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks will facilitate the charge separation and migration due to improved electronic ultrastructure and morphology in comparison to current polymer composite photovoltaic system. This presentation will describe our recent progress in the design, synthesis and characterization of a novel donor-bridge-acceptor block copolymer system for potential high-efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene, the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene, and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes the holes, the acceptor block stabilizes the electrons. The bridge block is designed to hinder the electron-hole recombination. Thus, improved charge separation is expected. In addition, charge migration will also be facilitated due to the expected nano-phase separated and highly ordered block copolymer ultrastructural. The combination of all these factors will result in significant overall enhancement of photovoltaic power conversion efficiency.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Charge-Carrier Balance for Highly Efficient Inverted Planar Heterojunction Perovskite Solar Cells.

PubMed

Chen, Ke; Hu, Qin; Liu, Tanghao; Zhao, Lichen; Luo, Deying; Wu, Jiang; Zhang, Yifei; Zhang, Wei; Liu, Feng; Russell, Thomas P; Zhu, Rui; Gong, Qihuang

2016-12-01

The charge-carrier balance strategy by interface engineering is employed to optimize the charge-carrier transport in inverted planar heterojunction perovskite solar cells. N,N-Dimethylformamide-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and poly(methyl methacrylate)-modified PCBM are utilized as the hole and electron selective contacts, respectively, leading to a high power conversion efficiency of 18.72%. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new three-phase heterocrystal catalysts and their superior treatment efficiency for tetracycline

NASA Astrophysics Data System (ADS)

Wang, Feng-Rui; Sun, Hui-Ping; Wang, Yan; Liu, Jin-Ku; Fang, Yi; Wang, Jian-Dong

An easy recyclable and interesting Ag3PO4@Pt@TiO2 (APTP) three-phase heterocrystal chains were self-assembled by the cohesive action and chemical construction of polyvinylpyrrolidone (PVP). We found that a new electron-hole transmission path has been built via the rematch of the band structure of Ag3PO4, Pt and TiO2 which extends the light absorption and promoted the electron-hole separation to treat the antibiotic residues in the water. Based on the thorough investigations, a new catalytic material was provided for antibiotics degradation. The catalytic activity of APTP toward the degradation of tetracycline solution was enhanced by 166.67% and the stability increased remarkably compared with pure Ag3PO4 through the integration of different functional components.

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE PAGES

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; ...

2015-10-26

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Hard-X-Ray-Induced Multistep Ultrafast Dissociation

NASA Astrophysics Data System (ADS)

Travnikova, Oksana; Marchenko, Tatiana; Goldsztejn, Gildas; Jänkälä, Kari; Sisourat, Nicolas; Carniato, Stéphane; Guillemin, Renaud; Journel, Loïc; Céolin, Denis; Püttner, Ralph; Iwayama, Hiroshi; Shigemasa, Eiji; Piancastelli, Maria Novella; Simon, Marc

2016-05-01

Creation of deep core holes with very short (τ ≤1 fs ) lifetimes triggers a chain of relaxation events leading to extensive nuclear dynamics on a few-femtosecond time scale. Here we demonstrate a general multistep ultrafast dissociation on an example of HCl following Cl 1 s →σ* excitation. Intermediate states with one or multiple holes in the shallower core electron shells are generated in the course of the decay cascades. The repulsive character and large gradients of the potential energy surfaces of these intermediates enable ultrafast fragmentation after the absorption of a hard x-ray photon.

Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

PubMed

Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

2015-06-01

This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

2004-01-01

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Highly sensitive microfluidic paper-based photoelectrochemical sensing platform based on reversible photo-oxidation products and morphology-preferable multi-plate ZnO nanoflowers.

PubMed

Kong, Qingkun; Wang, Yanhu; Zhang, Lina; Xu, Caixia; Yu, Jinghua

2018-07-01

A microfluidic paper-based analytical device (μPAD) was simply constructed for highly sensitive detection of L-glutamic acid and L-cysteine. The μPAD featured with two functional zones on one strip of paper achieved by preferable multi-plate ZnO nanoflowers (ZnO NFs) and molecularly imprinting polymer (MIP) membranes. The as-designed μPAD was established based on the inherent relation between the photo-oxidation products and photoelectrochemical (PEC) performance with the highly sensitive detection of biomolecules. The ZnO NFs were utilized to produce photo-oxidation products by driving the reaction between ferrocenemethanol and photogenerated holes under ultraviolet light. The photo-oxidation products easily flowed to MIP membranes along the hydrophilic channel via capillary action. MIP membranes as the receptors specifically recognized the analytes as well as decreased the electron loss by blocking the reduction reaction between electrons and photo-oxidation products. The PEC response was obtained in the processes of electrons transfer and exhibited the direct relationships corresponding to the concentrations of target analytes. The μPAD showed the detection limits toward L-glutamic acid and L-cysteine as low as 9.6 pM and 24 pM, respectively. Moreover, it is interesting to point out that ZnO NFs nanostructure shows superior PEC signal compared with those of ZnO nanospheres, nanosheets, and nanorod arrays. In current work, photo-oxidation products are utilized to achieve highly sensitive PEC detection for biomolecules under ultraviolet light as well as avoid the effects of multiple modifications in the same region on the reproducibility, which is beneficial for opening up rich possibility for designing more efficient analytical strategy. Copyright © 2018 Elsevier B.V. All rights reserved.

Highly Efficient Ternary-Blend Polymer Solar Cells Enabled by a Nonfullerene Acceptor and Two Polymer Donors with a Broad Composition Tolerance.

PubMed

Xu, Xiaopeng; Bi, Zhaozhao; Ma, Wei; Wang, Zishuai; Choy, Wallace C H; Wu, Wenlin; Zhang, Guangjun; Li, Ying; Peng, Qiang

2017-12-01

In this work, highly efficient ternary-blend organic solar cells (TB-OSCs) are reported based on a low-bandgap copolymer of PTB7-Th, a medium-bandgap copolymer of PBDB-T, and a wide-bandgap small molecule of SFBRCN. The ternary-blend layer exhibits a good complementary absorption in the range of 300-800 nm, in which PTB7-Th and PBDB-T have excellent miscibility with each other and a desirable phase separation with SFBRCN. In such devices, there exist multiple energy transfer pathways from PBDB-T to PTB7-Th, and from SFBRCN to the above two polymer donors. The hole-back transfer from PTB7-Th to PBDB-T and multiple electron transfers between the acceptor and the donor materials are also observed for elevating the whole device performance. After systematically optimizing the weight ratio of PBDB-T:PTB7-Th:SFBRCN, a champion power conversion efficiency (PCE) of 12.27% is finally achieved with an open-circuit voltage (V oc ) of 0.93 V, a short-circuit current density (J sc ) of 17.86 mA cm -2 , and a fill factor of 73.9%, which is the highest value for the ternary OSCs reported so far. Importantly, the TB-OSCs exhibit a broad composition tolerance with a high PCE over 10% throughout the whole blend ratios. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Model of Ni-63 battery with realistic PIN structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Munson, Charles E.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr

2015-09-14

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-nmore » structure under scanning electron microscope illumination.« less

Model of Ni-63 battery with realistic PIN structure

NASA Astrophysics Data System (ADS)

Munson, Charles E.; Arif, Muhammad; Streque, Jeremy; Belahsene, Sofiane; Martinez, Anthony; Ramdane, Abderrahim; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; Ougazzaden, Abdallah

2015-09-01

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Coexistence of two electronic phases in LaTiO3+δ (0.01⩽δ⩽0.12) and their evolution with δ

NASA Astrophysics Data System (ADS)

Zhou, H. D.; Goodenough, J. B.

2005-04-01

Although LaTiO3+δ(0.01⩽δ⩽0.12) is single-phase to powder x-ray diffraction, its properties reveal that a hole-poor strongly correlated electronic phase coexists with a hole-rich itinerant-electron phase. With δ⩽0.03 , the hole-rich phase exists as a minority phase of isolated, mobile itinerant-electron clusters embedded in the hole-poor phase. With δ⩾0.08 , isolated hole-poor clusters are embedded in an itinerant-electron matrix. As δ>0.08 increases, the hole-poor clusters become smaller and more isolated until they are reduced to superparamagnetic strong-correlation fluctuations by δ=0.12 . This behavior is consistent with prediction from the virial theorem of a first-order phase change at the crossover from localized (or strongly correlated) to itinerant electronic behavior, a smaller equilibrium (Ti-O) bond length being in the itinerant-electron phase. Accordingly, the variation of volume with oxidation state does not obey Végard’s law; the itinerant-electron minority phase exerts a compressive force on the hole-poor matrix, and the hole-poor minority phase exerts a tensile stress on the hole-rich matrix.

Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer

PubMed Central

Udum, Yasemin; Denk, Patrick; Adam, Getachew; Apaydin, Dogukan H.; Nevosad, Andreas; Teichert, Christian; S. White, Matthew.; S. Sariciftci, Niyazi.; Scharber, Markus C.

2014-01-01

We have developed a hole-blocking layer for bulk-heterojunction solar cells based on cross-linked polyethylenimine (PEI). We tested five different ether-based cross-linkers and found that all of them give comparable solar cell efficiencies. The initial idea that a cross-linked layer is more solvent resistant compared to a pristine PEI layer could not be confirmed. With and without cross-linking, the PEI layer sticks very well to the surface of the indium–tin–oxide electrode and cannot be removed by solvents used to process PEI or common organic semiconductors. The cross-linked PEI hole-blocking layer functions for multiple donor–acceptor blends. We found that using cross-linkers improves the reproducibility of the device fabrication process. PMID:24817837

Well-Defined Nanostructured, Single-Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells.

PubMed

Choi, Jongmin; Song, Seulki; Hörantner, Maximilian T; Snaith, Henry J; Park, Taiho

2016-06-28

An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution-processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.

Spectral observations of hole injection with transition metal oxides for an efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Chiu, Tien-Lung; Chuang, Ya-Ting

2015-02-01

Transition metal oxides, such as molybdenum trioxide (MoO3), tungsten trioxide (WO3) and vanadium pent-oxide (V2O5), are well-known hole injection materials used for organic electronic devices. These materials promote work functions of anodes, reduce energy barriers, and facilitate hole transport at the interface between the inorganic anode and organic hole-transporting layer (HTL). In this study, we characterized the transmittance spectra and work function of these materials. Furthermore, we employed a hole-injection layer (HIL) in a blue phosphorescent organic light-emitting diode (OLED) to evaluate their hole-injection capacity by detecting the variation in the emission spectra. Thus, we utilized an OLED structure that has fast electron transporting dynamics to establish the recombination zone located at emitting layer and a partial HTL close to the anode. We used these three transition metal oxides individually as HILs sandwiched between the ITO anode and HTL and concluded that the strength of emissive light from the HTL was determined by their hole-injection capacity, depending on work function. The small amount of HTL emission light of the V2O5 OLED was explained by the high work function of 5.8 eV for the V2O5 film. However, the V2O5 OLED demonstrated the least favorable optoelectrical performance because of its low transmittance and high resistance of the V2O5 film. Ultimately, the 5 nm-MoO3 OLED exhibited the highest device performance because of its high material conductivity and transparency in the visible band.

Efficient hybrid white organic light-emitting diodes for application of triplet harvesting with simple structure

NASA Astrophysics Data System (ADS)

Hwang, Kyo Min; Lee, Song Eun; Lee, Sungkyu; Yoo, Han Kyu; Baek, Hyun Jung; Kim, Young Kwan; Kim, Jwajin; Yoon, Seung Soo

2016-08-01

In this study, we fabricated hybrid white organic light-emitting diodes (WOLEDs) based on triplet harvesting with a simple structure. All the hole transporting material and host in the emitting layer (EML) of devices utilized the same material N,N'-di-1-naphthalenyl-N,N'-diphenyl [1,1':4',1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD), which is known to be blue fluorescent material. Simple hybrid WOLEDs were fabricated with blue fluorescent, green and red phosphorescent materials. We investigated the effect of triplet harvesting (TH) by an exciton generation zone on simple hybrid WOLEDs. The simple hybrid WOLEDs characteristically had a dominant hole mobility, so an exciton generation zone was expected in the EML. Additionally, the optimal the thickness of the hole transporting layer and electron transporting layer was fabricated a simple hybrid WOLEDs. The simple hybrid WOLED exhibits a maximum luminous efficiency of 29.3 cd/A and a maximum external quantum efficiency of 11.2%. The Commission Internationale de l'Éclairage (International Commission on Illumination) coordinates were (0.45, 0.43) at about 10,000 cd/m2.

Hole transfer from CdSe nanoparticles to TQ1 polymer in hybrid solar cell device

NASA Astrophysics Data System (ADS)

Sohail, Muhammad; Shah, Zawar Hussain; Saeed, Shomaila; Bibi, Nasreen; Shahbaz, Sadia; Ahmed, Safeer; Shabbir, Saima; Siddiq, Muhammad; Iqbal, Azhar

2018-05-01

In view of realizing the economic viability, we fabricate a solar cell device containing low band gap and easily processable polymer 5-yl-8-(thiophene-2,5-diyl)-2,3-bis(3-(octyloxy)phenyl) quinoxaline (TQ1) and CdSe nanoparticles (NPs) and investigate its charge transport properties. When the TQ1 is combined with the CdSe NPs a strong photoluminescence quenching and shortening of photoluminescence lifetime of the TQ1 is observed indicating exciton transfer from TQ1 to the CdSe NPs. The time-resolved photoluminescence further reveals that the exciton transfer from the polymer to CdSe NPs is very efficient (68%) and it occurs in <1 ns. The exciton transfer from TQ1 to the NPs and electron-hole pair separation followed by hole transfer from the NPs to the TQ1 at the interface indeed increases the lifetime of the charge carriers. This in turn increases the efficiency of the solar cell as compared to polymer only device. These observations suggest the importance of other II-VI semiconductor NPs to achieve higher efficiency for photovoltaic devices containing TQ1 polymer.

Highly Efficient Perovskite Solar Modules by Scalable Fabrication and Interconnection Optimization

DOE PAGES

Yang, Mengjin; Kim, Dong Hoe; Klein, Talysa R.; ...

2018-01-02

To push perovskite solar cell (PSC) technology toward practical applications, large-area perovskite solar modules with multiple subcells need to be developed by fully scalable deposition approaches. Here, we demonstrate a deposition scheme for perovskite module fabrication with spray coating of a TiO2 electron transport layer (ETL) and blade coating of both a perovskite absorber layer and a spiro-OMeTAD-based hole transport layer (HTL). The TiO2 ETL remaining in the interconnection between subcells significantly affects the module performance. Reducing the TiO2 thickness changes the interconnection contact from a Schottky diode to ohmic behavior. Owing to interconnection resistance reduction, the perovskite modules withmore » a 10 nm TiO2 layer show enhanced performance mainly associated with an improved fill factor. Finally, we demonstrate a four-cell MA0.7FA0.3PbI3 perovskite module with a stabilized power conversion efficiency (PCE) of 15.6% measured from an aperture area of ~10.36 cm2, corresponding to an active-area module PCE of 17.9% with a geometric fill factor of ~87.3%.« less

Anticorrosion Coating using Olea sp. Leaves Extract

NASA Astrophysics Data System (ADS)

Ikhmal, W. M. K. W. M.; Yasmin, M. Y. N.; Fazira, M. F. M.; Rafizah, W. A. W.; Nik, W. B. Wan; Sabri, M. G. M.

2018-04-01

Olive leaves extract (OLE) was evaluated as green corrosion inhibitor for stainless steel grade 316L (SS316L) in several media using scanning electron microscope (SEM), electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization techniques. The Fourier Transform Infrared (FTIR) spectroscopy results reveals several active compound indicated by O-H stretch, C=O stretch, C-OH stretch and C-N stretch which can be attributed to oleuropein and hydroxtyrosol acting as the main inhibiting sources for corrosion. The results obtained also show the inhibition efficiency of OLE increase with the increase of OLE concentration. Through its inhibitive action elucidate from the electrochemical analysis, the extract was found to act as a mixed type inhibitor. Micrographs by SEM showed that the surface of steel which has been coated with 0% and 20% of OLE coating extract possess a lot of pin holes or pores while the steel with 10% of OLE coating extract shows the surface has multiple cracks. This study clearly shows the efficiency of OLE as anticorrosion coating for control of stainless steel in marine application.

Highly Efficient Perovskite Solar Modules by Scalable Fabrication and Interconnection Optimization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengjin; Kim, Dong Hoe; Klein, Talysa R.

To push perovskite solar cell (PSC) technology toward practical applications, large-area perovskite solar modules with multiple subcells need to be developed by fully scalable deposition approaches. Here, we demonstrate a deposition scheme for perovskite module fabrication with spray coating of a TiO2 electron transport layer (ETL) and blade coating of both a perovskite absorber layer and a spiro-OMeTAD-based hole transport layer (HTL). The TiO2 ETL remaining in the interconnection between subcells significantly affects the module performance. Reducing the TiO2 thickness changes the interconnection contact from a Schottky diode to ohmic behavior. Owing to interconnection resistance reduction, the perovskite modules withmore » a 10 nm TiO2 layer show enhanced performance mainly associated with an improved fill factor. Finally, we demonstrate a four-cell MA0.7FA0.3PbI3 perovskite module with a stabilized power conversion efficiency (PCE) of 15.6% measured from an aperture area of ~10.36 cm2, corresponding to an active-area module PCE of 17.9% with a geometric fill factor of ~87.3%.« less

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

NASA Astrophysics Data System (ADS)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

NASA Technical Reports Server (NTRS)

Menkara, H. M.; Wagner, B. K.; Summers, C. J.

1995-01-01

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Fulleropyrrolidinium Iodide As an Efficient Electron Transport Layer for Air-Stable Planar Perovskite Solar Cells.

PubMed

Huang, Jiabin; Yu, Xuegong; Xie, Jiangsheng; Li, Chang-Zhi; Zhang, Yunhai; Xu, Dikai; Tang, Zeguo; Cui, Can; Yang, Deren

2016-12-21

Organic-inorganic halide perovskite solar cells have attracted great attention in recent years. But there are still a lot of unresolved issues related to the perovskite solar cells such as the phenomenon of anomalous hysteresis characteristics and long-term stability of the devices. Here, we developed a simple three-layered efficient perovskite device by replacing the commonly employed PCBM electrical transport layer with an ultrathin fulleropyrrolidinium iodide (C 60 -bis) in an inverted p-i-n architecture. The devices with an ultrathin C 60 -bis electronic transport layer yield an average power conversion efficiency of 13.5% and a maximum efficiency of 15.15%. Steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements show that the high performance is attributed to the efficient blocking of holes and high extraction efficiency of electrons by C 60 -bis, due to a favorable energy level alignment between the CH 3 NH 3 PbI 3 and the Ag electrodes. The hysteresis effect and stability of our perovskite solar cells with C 60 -bis become better under indoor humidity conditions.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE PAGES

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

2017-08-25

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Radiative Efficiency of Collisionless Accretion

NASA Astrophysics Data System (ADS)

Gruzinov, Andrei V.

1998-07-01

The radiative efficiency, η≡L/Ṁc2, of a slowly accreting black hole is estimated using a two-temperature model of accretion. The radiative efficiency depends on the magnetic field strength near the Schwarzschild radius. For weak magnetic fields, i.e., β-1 ≡ B2/8πp <~ 10-3, the low efficiency η ~ 10-4 that is assumed in some theoretical models is achieved. For β-1 > 10-3, a significant fraction of viscous heat is dissipated by electrons and radiated away resulting in η > 10-4. At equipartition magnetic fields, β-1 ~ 1, we estimate η ~ 10-1.

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

NASA Astrophysics Data System (ADS)

Gao, Yang; Cansizoglu, Hilal; Polat, Kazim G.; Ghandiparsi, Soroush; Kaya, Ahmet; Mamtaz, Hasina H.; Mayet, Ahmed S.; Wang, Yinan; Zhang, Xinzhi; Yamada, Toshishige; Devine, Ekaterina Ponizovskaya; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

2017-04-01

High-speed, high-efficiency photodetectors play an important role in optical communication links that are increasingly being used in data centres to handle higher volumes of data traffic and higher bandwidths, as big data and cloud computing continue to grow exponentially. Monolithic integration of optical components with signal-processing electronics on a single silicon chip is of paramount importance in the drive to reduce cost and improve performance. We report the first demonstration of micro- and nanoscale holes enabling light trapping in a silicon photodiode, which exhibits an ultrafast impulse response (full-width at half-maximum) of 30 ps and a high efficiency of more than 50%, for use in data-centre optical communications. The photodiode uses micro- and nanostructured holes to enhance, by an order of magnitude, the absorption efficiency of a thin intrinsic layer of less than 2 µm thickness and is designed for a data rate of 20 gigabits per second or higher at a wavelength of 850 nm. Further optimization can improve the efficiency to more than 70%.

Sensitization of TiO₂ nanosheets with Cu-biphenylamine frame work to enhance photocatalytic degradation performance of toxic organic contaminants: Synthesis, mechanism and kinetic studies.

PubMed

Khan, Muhammad Asim; Mutahir, Sadaf; Wang, Fengyun; Lei, Wu; Xia, Mingzhu

2018-06-25

TNS/Cu(X) composite materials were firstly synthesized via simple overnight stirring of TNS in the methanolic solution of Cu complexes. The developed TNS/Cu(X) composites having a well-designed nanostructure, in which TNS and Cu complexes were closely bounded with each other. Biphenylamine complexes fixed on TNS surface in form of Nano-capsules, which were confirmed by TEM and SEM, thus improving the surface area and subsequently charge separation. Innovatively merged photocatalysts of Cu complexes with TNS were successfully verified for photocatalytic mineralization of colored and colorless organic contaminants under the visible light degradation. As compared to original TNS, TNS/Cu(BA) showed prominent improvement in the catalytic actions. Kinetics i.e. t1/2 (half-life times period), Kapp, and R2 (linear regression co-efficient) were also studied. The amended materials created charge separation, by means of electrons gathering at the higher CB, and holes gathering at lower level VB of Cu complex, therefore improving mineralization efficiency of electrons and holes. TNS/Cu(BA) degrade 99% to 99.6% of MO & RhB dyes in 120 min, and 160 min, respectively, and 68 % of phenol and 53% of TCP were destroyed in 180 min. The resilient holes can directly destroy MO, RhB, phenol, and TCP. © 2018 IOP Publishing Ltd.

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

DOE PAGES

Auden, E. C.; Vizkelethy, G.; Serkland, D. K.; ...

2017-03-24

Here, the Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al 0.3Ga 0.7As/GaAs/Al 0.25Ga 0.75As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation asmore » photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.« less

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

NASA Astrophysics Data System (ADS)

Auden, E. C.; Vizkelethy, G.; Serkland, D. K.; Bossert, D. J.; Doyle, B. L.

2017-05-01

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al0.3Ga0.7As/GaAs/Al0.25Ga0.75As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auden, E. C.; Vizkelethy, G.; Serkland, D. K.

Here, the Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al 0.3Ga 0.7As/GaAs/Al 0.25Ga 0.75As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation asmore » photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.« less

Magnetospheric Multiscale Observations of Electron Vortex Magnetic Hole in the Turbulent Magnetosheath Plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, S. Y.; Yuan, Z. G.; Wang, D. D.

We report on the observations of an electron vortex magnetic hole corresponding to a new type of coherent structure in the turbulent magnetosheath plasma using the Magnetospheric Multiscale mission data. The magnetic hole is characterized by a magnetic depression, a density peak, a total electron temperature increase (with a parallel temperature decrease but a perpendicular temperature increase), and strong currents carried by the electrons. The current has a dip in the core region and a peak in the outer region of the magnetic hole. The estimated size of the magnetic hole is about 0.23 ρ {sub i} (∼30 ρ {submore » e}) in the quasi-circular cross-section perpendicular to its axis, where ρ {sub i} and ρ {sub e} are respectively the proton and electron gyroradius. There are no clear enhancements seen in high-energy electron fluxes. However, there is an enhancement in the perpendicular electron fluxes at 90° pitch angle inside the magnetic hole, implying that the electrons are trapped within it. The variations of the electron velocity components V {sub em} and V {sub en} suggest that an electron vortex is formed by trapping electrons inside the magnetic hole in the cross-section in the M – N plane. These observations demonstrate the existence of a new type of coherent structures behaving as an electron vortex magnetic hole in turbulent space plasmas as predicted by recent kinetic simulations.« less

Efficient Organic/Inorganic Hybrid Solar Cell Integrating Polymer Nanowires and Inorganic Nanotetrapods.

PubMed

Xu, Weizhe; Tan, Furui; Liu, Xiansheng; Zhang, Weifeng; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo

2017-12-01

Constructing a highly efficient bulk-heterojunction is of critical importance to the hybrid organic/inorganic solar cells. Here in this work, we introduce a novel hybrid architecture containing P3HT nanowire and CdSe nanotetrapod as bicontinuous charge channels for holes and electrons, respectively. Compared to the traditionally applied P3HT molecules, the well crystallized P3HT nanowires qualify an enhanced light absorption at the long wavelength as well as strengthened charge carrier transport in the hybrid active layer. Accordingly, based on efficient dissociation of photogenerated excitons, the interpercolation of these two nano-building blocks allows a photovoltaic conversion efficiency of 1.7% in the hybrid solar cell, up to 42% enhancement compared to the reference solar cell with traditional P3HT molecules as electron donor. Our work provides a promising hybrid structure for efficient organic/inorganic bulk-heterojunction solar cells.

A Method for Calculating Fermi Energy and Carrier Concentrations in Semiconducts

ERIC Educational Resources Information Center

Gaylord, T. K.; Linxwiler, J. N., Jr.

1976-01-01

An efficient numerical method for calculating the Fermi energy, the free electron and free hole concentrations, and the ionized impurity conductors in a semiconductor material is described. The method allows freedom with respect to type of material, temperature, and amount and type of donor and acceptor impurities. (Author/CP)

High-efficiency and mechano-/photo- bi-catalysis of piezoelectric-ZnO@ photoelectric-TiO2 core-shell nanofibers for dye decomposition.

PubMed

You, Huilin; Wu, Zheng; Jia, Yanmin; Xu, Xiaoli; Xia, Yuntao; Han, Zichen; Wang, Yu

2017-09-01

A mechano-/photo- bi-catalyst of piezoelectric-ZnO@photoelectric-TiO 2 core-shell nanofibers was hydrothermally synthesized for Methyl Orange (10 mg L -1 ) decomposition. The mechano-/photo- bi-catalysis in ZnO@TiO 2 is superior to mechano- or photo-catalysis in decomposing Methyl Orange, which is mainly attributed to the synergy effect of the piezoelectric-ZnO core's mechano-catalysis and the thin photoelectric TiO 2 shell's photo-catalysis. The heterostructure of the piezoelectric-ZnO@photoelectric-TiO 2 core-shell interface, being helpful to reduce electron-hole pair recombination and to separate the piezoelectrically-/photoelectric ally- induced electrons and holes, may also make a great contribution to the enhanced catalysis performance. The mechano-/photo-bi-catalysis in ZnO@TiO 2 core-shell nanofibers possesses the advantages of high efficiency, non-toxicity and tractability and is potential in utilizing mechanical/solar energy to deal with dye wastewater. Copyright © 2017 Elsevier Ltd. All rights reserved.

Measuring Charge Collection Efficiency in Diamond Vertex Detectors

NASA Astrophysics Data System (ADS)

Josey, Brian; Seidel, Sally; Hoeferkamp, Martin

2011-10-01

As currently used at the Large Hadron Collider, vertex detectors are composed primarily of silicon sensors that image particle tracks by detecting the creation of electron-hole pairs caused by the excitation of the silicon atoms. We are investigating replacing these silicon detectors with detectors made out of diamond. Diamond is advantageous due to its radiation hardness. We are measuring the charge collection efficiency of diamond as a function of fluence. We are building a characterization station. Diamond samples will be placed into the characterization station and exposed to a strontium-90 beta source, before and after I irradiate them with 800 MeV protons at LANL. The radiation from the Sr-90 source will create electron-hole pairs. These will be read out by applying an electric field across the sample. The system is triggered by a scintillator-photomultiplier tube assembly. The goal of this measurement is to record collected charge as a function of bias voltage. The diamond charge collection data will be compared to silicon and predictions about detector operation at the LHC will be made.

Electron hole tracking PIC simulation

NASA Astrophysics Data System (ADS)

Zhou, Chuteng; Hutchinson, Ian

2016-10-01

An electron hole is a coherent BGK mode solitary wave. Electron holes are observed to travel at high velocities relative to bulk plasmas. The kinematics of a 1-D electron hole is studied using a novel Particle-In-Cell simulation code with fully kinetic ions. A hole tracking technique enables us to follow the trajectory of a fast-moving solitary hole and study quantitatively hole acceleration and coupling to ions. The electron hole signal is detected and the simulation domain moves by a carefully designed feedback control law to follow its propagation. This approach has the advantage that the length of the simulation domain can be significantly reduced to several times the hole width, which makes high resolution simulations tractable. We observe a transient at the initial stage of hole formation when the hole accelerates to several times the cold-ion sound speed. Artificially imposing slow ion speed changes on a fully formed hole causes its velocity to change even when the ion stream speed in the hole frame greatly exceeds the ion thermal speed, so there are no reflected ions. The behavior that we observe in numerical simulations agrees very well with our analytic theory of hole momentum conservation and energization effects we call ``jetting''. The work was partially supported by the NSF/DOE Basic Plasma Science Partnership under Grant DE-SC0010491. Computer simulations were carried out on the MIT PSFC parallel AMD Opteron/Infiniband cluster Loki.

Microwave assisted synthesis of porous ZnO/SnS heterojunction and its application in visible light degradation of ciprofloxacin

NASA Astrophysics Data System (ADS)

Makama, A. B.; Salmiaton, A.; Saion, E. B.; Choong, T. S. Y.; Abdullah, N.

2016-07-01

Porous ZnO/SnS heterojunctions were successfully synthesized via microwave-assisted heating of aqueous solutions containing different amounts of SnS precursors (SnCl2 and Na2S) in the presence of fixed amount of ZnCO3 nanoparticles. The experimental results revealed that the heterojunctions exhibited much higher visible light-driven photocatalytic activity for the degradation of the ciprofloxacin than pure SnS nanocrystals. The photocatalytic degradation efficiency (1-Ct/C0) of the pollutant for the most active heterogeneous nanostructure is about four times more efficient than pure SnS. The enhanced photocatalytic efficiency is ascribed to the synergic effect of high photon absorption and reduction in the recombination of electrons and holes because of efficient separation and electron transfer from the SnS to ZnO nanoparticles.

Enhanced Electron Affinity and Exciton Confinement in Exciplex-Type Host: Power Efficient Solution-Processed Blue Phosphorescent OLEDs with Low Turn-on Voltage.

PubMed

Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Jiang, Wei

2016-01-27

A benzimidazole/phosphine oxide hybrid 1,3,5-tris(1-(4-(diphenylphosphoryl)phenyl)-1H-benzo[d]imidazol-2-yl)benzene (TPOB) was newly designed and synthesized as the electron-transporting component to form an exciplex-type host with the conventional hole-transporting material tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Because of the enhanced triplet energy and electron affinity of TPOB, the energy leakage from exciplex-state to the constituting molecule was eliminated. Using energy transfer from exciplex-state, solution-processed blue phosphorescent organic light-emitting diodes (PHOLEDs) achieved an extremely low turn-on voltage of 2.8 V and impressively high power efficiency of 22 lm W(-1). In addition, the efficiency roll-off was very small even at luminance up to 10 000 cd m(-2), which suggested the balanced charge transfer in the emission layer. This study demonstrated that molecular modulation was an effective way to develop efficient exciplex-type host for high performanced PHOLEDs.

Defective TiO 2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells

DOE PAGES

Li, Yanbo; Cooper, Jason K.; Liu, Wenjun; ...

2016-08-18

Formation of planar heterojunction perovskite solar cells exhibiting both high efficiency and stability under continuous operation remains a challenge. Here, we show this can be achieved by using a defective TiO 2 thin film as the electron transport layer. TiO 2 layers with native defects are deposited by electron beam evaporation in an oxygen-deficient environment. Deep-level hole traps are introduced in the TiO 2 layers and contribute to a high photoconductive gain and reduced photocatalytic activity. The high photoconductivity of the TiO 2 electron transport layer leads to improved efficiency for the fabricated planar devices. A maximum power conversion efficiencymore » of 19.0% and an average PCE of 17.5% are achieved. In addition, the reduced photocatalytic activity of the TiO 2 layer leads to enhanced long-Term stability for the planar devices. Under continuous operation near the maximum power point, an efficiency of over 15.4% is demonstrated for 100 h.« less

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. This work lays the groundwork for the realization of quantum repeaters and quantum networks on a chip.

Infrared light sources with semimetal electron injection

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Allerman, Andrew A.

1999-01-01

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Effects of the interfacial charge injection properties of silver nanowire transparent conductive electrodes on the performance of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Jin-Hoon; Triambulo, Ross E.; Park, Jin-Woo

2017-03-01

We investigated the charge injection properties of silver nanowire networks (AgNWs) in a composite-like structure with poly(2,3-dihydrothieno-1,4-dioxin)-poly(styrenesulfonate) (PEDOT:PSS). The composite films acted as the anodes and hole transport layers (HTLs) in organic light-emitting diodes (OLEDs). The current density (J)-voltage (V)-luminance (L) characteristics and power efficiency (ɛ) of the OLEDs were measured to determine their electrical and optical properties. The charge injection properties of the AgNWs in the OLEDs during operation were characterized via impedance spectroscopy (IS) by determining the variations in the capacitances (C) of the devices with respect to the applied V and the corresponding frequency (f). All measured results were compared with results for OLEDs fabricated on indium tin oxide (ITO) anodes. The OLEDs on AgNWs showed lower L and ɛ values than the OLEDs on ITO. It was also observed that AgNWs exhibit excellent charge injection properties and that the interfaces between the AgNWs and the HTL have very small charge injection barriers, resulting in an absence of charge carrier traps when charges move across these interfaces. However, in the AgNW-based OLED, there was a large mismatch in the number of injected holes and electrons. Furthermore, the highly conductive electrical paths of the AgNWs in the composite-like AgNW and PEDOT:PSS structure allowed a large leakage current of holes that did not participate in radiative recombination with the electrons; consequently, a lower ɛ was observed for the AgNW-based OLEDs than for the ITO-based OLEDs. To match the injection of electrons by the electron transport layer (ETL) in the AgNW-based OLED with that of holes by the AgNW/PEDOT:PSS composite anode, the electron injection barrier of the ETL was decreased by using the low work function polyethylenimine ethoxylated (PEIE) doped with n-type cesium carbonate (Cs2CO3). With the doped-PEIE, the performance of the AgNW-based OLED was significantly enhanced through the balanced injection of holes and electrons, which clearly verified our analysis results by IS.

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron–Hole Pair Excitation

DOE PAGES

Kirschner, Matthew S.; Hannah, Daniel C.; Diroll, Benjamin T.; ...

2017-07-28

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts relate heating and peak amplitude reduction confers lattice disordering. For smaller NCs, melting initiates upon absorption of as few as ~15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5-nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structuresmore » following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. Here, these findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.« less

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron–Hole Pair Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirschner, Matthew S.; Hannah, Daniel C.; Diroll, Benjamin T.

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts relate heating and peak amplitude reduction confers lattice disordering. For smaller NCs, melting initiates upon absorption of as few as ~15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5-nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structuresmore » following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. Here, these findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.« less

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

Interface design principles for high-performance organic semiconductor devices

DOE PAGES

Nie, Wanyi; Gupta, Gautam; Crone, Brian K.; ...

2015-03-23

Organic solar cells (OSCs) are a promising cost-effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. W. Nie, A. Mohite, and co-workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor-acceptor interface, resulting in a dramatic increase in power conversion efficiency.

Highly efficient inverted polymer solar cells based on a cross-linkable water-/alcohol-soluble conjugated polymer interlayer.

PubMed

Zhang, Kai; Zhong, Chengmei; Liu, Shengjian; Mu, Cheng; Li, Zhengke; Yan, He; Huang, Fei; Cao, Yong

2014-07-09

A cross-linkable water/alcohol soluble conjugated polymer (WSCP) material poly[9,9-bis(6'-(N,N-diethylamino)propyl)-fluorene-alt-9,9-bis(3-ethyl(oxetane-3-ethyloxy)-hexyl) fluorene] (PFN-OX) was designed. The cross-linkable nature of PFN-OX is good for fabricating inverted polymer solar cells (PSCs) with well-defined interface and investigating the detailed working mechanism of high-efficiency inverted PSCs based on poly[4,8-bis(2-ethylhexyloxyl)benzo[1,2-b:4,5-b']dithio-phene-2,6-diyl-alt-ethylhexyl-3-fluorothithieno[3,4-b]thiophene-2-carboxylate-4,6-diyl] (PTB7) and (6,6)-phenyl-C71-butyric acid methyl ester (PC71BM) blend active layer. The detailed working mechanism of WSCP materials in high-efficiency PSCs were studied and can be summarized into the following three effects: a) PFN-OX tunes cathode work function to enhance open-circuit voltage (Voc); b) PFN-OX dopes PC71BM at interface to facilitate electron extraction; and c) PFN-OX extracts electrons and blocks holes to enhance fill factor (FF). On the basis of this understanding, the hole-blocking function of the PFN-OX interlayer was further improved with addition of a ZnO layer between ITO and PFN-OX, which led to inverted PSCs with a power conversion efficiency of 9.28% and fill factor high up to 74.4%.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

NASA Astrophysics Data System (ADS)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Lewis Base Passivation of Hybrid Halide Perovskites Slows Electron-Hole Recombination: Time-Domain Ab Initio Analysis.

PubMed

Liu, Lihong; Fang, Wei-Hai; Long, Run; Prezhdo, Oleg V

2018-03-01

Nonradiative electron-hole recombination plays a key role in determining photon conversion efficiencies in solar cells. Experiments demonstrate significant reduction in the recombination rate upon passivation of methylammonium lead iodide perovskite with Lewis base molecules. Using nonadiabatic molecular dynamics combined with time-domain density functional theory, we find that the nonradiative charge recombination is decelerated by an order of magnitude upon adsorption of the molecules. Thiophene acts by the traditional passivation mechanism, forcing electron density away from the surface. In contrast, pyridine localizes the electron at the surface while leaving it energetically near the conduction band edge. This is because pyridine creates a stronger coordinative bond with a lead atom of the perovskite and has a lower energy unoccupied orbital compared with thiophene due to the more electronegative nitrogen atom relative to thiophene's sulfur. Both molecules reduce two-fold the nonadiabatic coupling and electronic coherence time. A broad range of vibrational modes couple to the electronic subsystem, arising from inorganic and organic components. The simulations reveal the atomistic mechanisms underlying the enhancement of the excited-state lifetime achieved by the perovskite passivation, rationalize the experimental results, and advance our understanding of charge-phonon dynamics in perovskite solar cells.

Magnetic holes in the dipolarized magnetotail: ion and electron anisotropies

NASA Astrophysics Data System (ADS)

Shustov, P.; Artemyev, A.; Zhang, X. J.; Yushkov, E.; Petrukovich, A. A.

2017-12-01

We conduct statistics on magnetic holes observed by THEMIS spacecraft in the near-Earth magnetotail. Groups of holes are detected after dipolarizations in the quiet, equatorial plasma sheet. Magnetic holes are characterized by significant magnetic field depressions (up to 50%) and strong electron currents ( 10-50 nA/m2), with spatial scales much smaller than the ion gyroradius. These magnetic holes are populated by hot (>10 keV), transversely anisotropic electrons supporting the pressure balance. We present statistical properties of these sub-ion scale magnetic holes and discuss possible mechanisms on the hole formation.

Electron beam extraction on plasma cathode electron sources system

NASA Astrophysics Data System (ADS)

Purwadi, Agus; Taufik, M., Lely Susita R.; Suprapto, Saefurrochman, H., Anjar A.; Wibowo, Kurnia; Aziz, Ihwanul; Siswanto, Bambang

2017-03-01

ELECTRON BEAM EXTRACTION ON PLASMA CATHODE ELECTRON SOURCES SYSTEM. The electron beam extraction through window of Plasma Generator Chamber (PGC) for Pulsed Electron Irradiator (PEI) device and simulation of plasma potential has been studied. Plasma electron beam is extracted to acceleration region for enlarging their power by the external accelerating high voltage (Vext) and then it is passed foil window of the PEI for being irradiated to any target (atmospheric pressure). Electron beam extraction from plasma surface must be able to overcome potential barrier at the extraction window region which is shown by estimate simulation (Opera program) based on data of plasma surface potential of 150 V with Ueks values are varied by 150 kV, 175 kV and 200 kV respectively. PGC is made of 304 stainless steel with cylindrical shape in 30 cm of diameter, 90 cm length, electrons extraction window as many as 975 holes on the area of (15 × 65) cm2 with extraction hole cell in 0.3 mm of radius each other, an cylindrical shape IEP chamber is made of 304 stainless steel in 70 cm diameter and 30 cm length. The research result shown that the acquisition of electron beam extraction current depends on plasma parameters (electron density ne, temperature Te), accelerating high voltage Vext, the value of discharge parameter G, anode area Sa, electron extraction window area Se and extraction efficiency value α.

Electron and hole transport in ambipolar, thin film pentacene transistors

NASA Astrophysics Data System (ADS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ˜78 and ˜28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

NASA Astrophysics Data System (ADS)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

Carbon materials for enhancing charge transport in the advancements of perovskite solar cells

NASA Astrophysics Data System (ADS)

Hu, Ruiyuan; Chu, Liang; Zhang, Jian; Li, Xing'ao; Huang, Wei

2017-09-01

Organic-inorganic halide perovskite solar cells (PSCs) have become a new favorite in the photovoltaic field, due to the boosted efficiency up to 22.1%. Despite a flow of achievements, there are certain challenges to simultaneously meet high efficiency, large scale, low cost and high stability. Due to the low cost, extensive sources, high electrical conductivity and chemical stability, carbon materials have made undeniable contributions to play positive roles in developing PSCs. Carbon materials not only have the favorable conductivity but also bipolar advantage, which can transfer both electrons and holes. In this review, we will discuss how the carbon materials transfer charge or accelerate charge transport by incorporation in PSCs. Carbon materials can replace transparent conductive oxide layers, and enhance electron transport in electron transport layers. Moreover, carbon materials with continuous structure, especially carbon nanotubes and graphene, can provide direct charge transport channel that make them suitable additives or even substitutes in hole transport layers. Especially, the successful application of carbon materials as counter electrodes makes the devices full-printable, low temperature and high stability. Finally, a brief outlook is provided on the future development of carbon materials for PSCs, which are expected to devote more contributions in the future photovoltaic market.

Synthesis of ZnO-Pt nanoflowers and their photocatalytic applications.

PubMed

Yuan, Jiaquan; Choo, Eugene Shi Guang; Tang, Xiaosheng; Sheng, Yang; Ding, Jun; Xue, Junmin

2010-05-07

The photocatalytic behaviors of ZnO nanoparticles have been intensively studied recently. However, the photocatalytic efficiency of pure ZnO nanoparticles always suffers from the quick recombination of photoexcited electrons and holes. In order to suppress the electron-hole recombination and then raise the photocatalytic efficiency of ZnO, metal nanoparticles have been combined with ZnO to form ZnO-metal heterostructures. In this work, the feasibility of synthesizing ZnO-Pt composite nanoflowers for optimized catalytic properties was studied. Three different Pt nanocrystals, i.e. cubic Pt nanocrystals enclosed by {100} facets, octahedral Pt nanocrystals enclosed by {111} facets, and truncated octahedral Pt nanocrystals enclosed by both {111} and {100} facets, were selected as seeds for epitaxial growth of ZnO. A ZnO-Pt flowerlike nanostructure was formed by selective growth of ZnO nanolobes at {111} facets of the truncated octahedral Pt nanocrystals. The resultant nanoflowers had well defined ZnO-Pt interfaces and exposed Pt {100} facets, as confirmed by transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) measurements. The photocatalytic behaviors of the resultant ZnO-Pt nanoflowers were demonstrated in the photodegradation of ethyl violet. In comparison with the commercial TiO(2) photocatalyst P25, the ZnO-Pt flowerlike nanostructures showed improved catalytic efficiency. Notable ferromagnetism of the obtained ZnO-Pt flowerlike nanostructures was also observed. It is believed that the ZnO-Pt interface played an important role in the enlarged magnetic coercivity of the ZnO-Pt nanoflowers.

Shape Optimisation of Holes in Loaded Plates by Minimisation of Multiple Stress Peaks

DTIC Science & Technology

2015-04-01

UNCLASSIFIED UNCLASSIFIED Shape Optimisation of Holes in Loaded Plates by Minimisation of Multiple Stress Peaks Witold Waldman and Manfred...minimising the peak tangential stresses on multiple segments around the boundary of a hole in a uniaxially-loaded or biaxially-loaded plate . It is based...RELEASE UNCLASSIFIED UNCLASSIFIED Shape Optimisation of Holes in Loaded Plates by Minimisation of Multiple Stress Peaks Executive Summary Aerospace

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

High Piezo-photocatalytic Efficiency of CuS/ZnO Nanowires Using Both Solar and Mechanical Energy for Degrading Organic Dye.

PubMed

Hong, Deyi; Zang, Weili; Guo, Xiao; Fu, Yongming; He, Haoxuan; Sun, Jing; Xing, Lili; Liu, Baodan; Xue, Xinyu

2016-08-24

High piezo-photocatalytic efficiency of degrading organic pollutants has been realized from CuS/ZnO nanowires using both solar and mechanical energy. CuS/ZnO heterostructured nanowire arrays are compactly/vertically aligned on stainless steel mesh by a simple two-step wet-chemical method. The mesh-supported nanocomposites can facilitate an efficient light harvesting due to the large surface area and can also be easily removed from the treated solution. Under both solar and ultrasonic irradiation, CuS/ZnO nanowires can rapidly degrade methylene blue (MB) in aqueous solution, and the recyclability is investigated. In this process, the ultrasonic assistance can greatly enhance the photocatalytic activity. Such a performance can be attributed to the coupling of the built-in electric field of heterostructures and the piezoelectric field of ZnO nanowires. The built-in electric field of the heterostructure can effectively separate the photogenerated electrons/holes and facilitate the carrier transportation. The CuS component can improve the visible light utilization. The piezoelectric field created by ZnO nanowires can further separate the photogenerated electrons/holes through driving them to migrate along opposite directions. The present results demonstrate a new water-pollution solution in green technologies for the environmental remediation at the industrial level.

Novel Solvent-free Perovskite Deposition in Fabrication of Normal and Inverted Architectures of Perovskite Solar Cells

PubMed Central

Nejand, Bahram Abdollahi; Gharibzadeh, Saba; Ahmadi, Vahid; Shahverdi, H. Reza

2016-01-01

We introduced a new approach to deposit perovskite layer with no need for dissolving perovskite precursors. Deposition of Solution-free perovskite (SFP) layer is a key method for deposition of perovskite layer on the hole or electron transport layers that are strongly sensitive to perovskite precursors. Using deposition of SFP layer in the perovskite solar cells would extend possibility of using many electron and hole transport materials in both normal and invert architectures of perovskite solar cells. In the present work, we synthesized crystalline perovskite powder followed by successful deposition on TiO2 and cuprous iodide as the non-sensitve and sensitive charge transport layers to PbI2 and CH3NH3I solution in DMF. The post compressing step enhanced the efficiency of the devices by increasing the interface area between perovskite and charge transport layers. The 9.07% and 7.71% cell efficiencies of the device prepared by SFP layer was achieved in respective normal (using TiO2 as a deposition substrate) and inverted structure (using CuI as deposition substrate) of perovskite solar cell. This method can be efficient in large-scale and low cost fabrication of new generation perovskite solar cells. PMID:27640991

Charge transfer mechanism in titanium-doped microporous silica for photocatalytic water-splitting applications

DOE PAGES

Sapp, Wendi; Koodali, Ranjit; Kilin, Dmitri

2016-02-29

Solar energy conversion into chemical form is possible using artificial means. One example of a highly-efficient fuel is solar energy used to split water into oxygen and hydrogen. Efficient photocatalytic water-splitting remains an open challenge for researchers across the globe. Despite significant progress, several aspects of the reaction, including the charge transfer mechanism, are not fully clear. Density functional theory combined with density matrix equations of motion were used to identify and characterize the charge transfer mechanism involved in the dissociation of water. A simulated porous silica substrate, using periodic boundary conditions, with Ti 4+ ions embedded on the innermore » pore wall was found to contain electron and hole trap states that could facilitate a chemical reaction. A trap state was located within the silica substrate that lengthened relaxation time, which may favor a chemical reaction. A chemical reaction would have to occur within the window of photoexcitation; therefore, the existence of a trapping state may encourage a chemical reaction. Furthermore, this provides evidence that the silica substrate plays an integral part in the electron/hole dynamics of the system, leading to the conclusion that both components (photoactive materials and support) of heterogeneous catalytic systems are important in optimization of catalytic efficiency.« less

Exciton fission in monolayer transition metal dichalcogenide semiconductors.

PubMed

Steinhoff, A; Florian, M; Rösner, M; Schönhoff, G; Wehling, T O; Jahnke, F

2017-10-27

When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a plasma of unbound fermionic particles or a gas of composite bosons called excitons. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states. Using state-of-the-art many-body theory, we show that the thermodynamic fission-fusion balance of excitons and electron-hole plasma can be efficiently tuned via the dielectric environment as well as charge carrier doping. We propose the observation of these effects by studying exciton satellites in photoemission and tunneling spectroscopy, which present direct solid-state counterparts of high-energy collider experiments on the induced fission of composite particles.

Observation of chiral phonons.

PubMed

Zhu, Hanyu; Yi, Jun; Li, Ming-Yang; Xiao, Jun; Zhang, Lifa; Yang, Chih-Wen; Kaindl, Robert A; Li, Lain-Jong; Wang, Yuan; Zhang, Xiang

2018-02-02

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

PubMed

Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

2016-01-28

Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

NASA Astrophysics Data System (ADS)

Chen, Hai-Yang; Jiang, Lan; Li, Da-Rang

2011-05-01

PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

Microchannel cross load array with dense parallel input

DOEpatents

Swierkowski, Stefan P.

2004-04-06

An architecture or layout for microchannel arrays using T or Cross (+) loading for electrophoresis or other injection and separation chemistry that are performed in microfluidic configurations. This architecture enables a very dense layout of arrays of functionally identical shaped channels and it also solves the problem of simultaneously enabling efficient parallel shapes and biasing of the input wells, waste wells, and bias wells at the input end of the separation columns. One T load architecture uses circular holes with common rows, but not columns, which allows the flow paths for each channel to be identical in shape, using multiple mirror image pieces. Another T load architecture enables the access hole array to be formed on a biaxial, collinear grid suitable for EDM micromachining (square holes), with common rows and columns.

2D black phosphorous nanosheets as a hole transporting material in perovskite solar cells

NASA Astrophysics Data System (ADS)

Muduli, Subas Kumar; Varrla, Eswaraiah; Kulkarni, Sneha Avinash; Han, Guifang; Thirumal, Krishnamoorthy; Lev, Ovadia; Mhaisalkar, Subodh; Mathews, Nripan

2017-12-01

We demonstrate for the first-time liquid exfoliated few layers of 2D Black phosphorus (BP) nanosheets as a hole transporting material (HTM) for perovskite based solar cells. The photoelectron spectroscopy in air (PESA) measurements confirm the low laying valence band level of BP nanosheets (-5.2 eV) favourable for hole injection from CH3NH3PbI3 (MAPbI3). Our results show that ∼25% improvement in power conversion efficiency (PCE) of η = 16.4% for BP nanosheets + Spiro-OMeTAD as an HTM as compared to spiro-OMeTAD (η = 13.1%). When BP nanosheets are exclusively utilised as an HTM, a PCE of η = 7.88% is noted, an improvement over the 4% PCE values observed for HTM free devices. Photoluminescence (PL) quenching of MAPbI3 and impedance measurements further confirm the charge extraction ability of BP nanosheets. The structural and optical characterization of liquid exfoliated BP nanosheets is discussed in detail with the aid of transmission electron microscopy, Raman spectroscopy, absorption spectroscopy and photo-electron spectroscopy.

Multi-layer accretion disks around black holes and formation of a hot ion-torus

NASA Astrophysics Data System (ADS)

Hujeirat, A.; Camenzind, M.

2000-08-01

We present the first 2D steady-state numerical radiative hydrodynamical calculations showing the formation of a low-density hot torus in the very inner region of accretion disks around a black hole. The inner part of the disk is found to be thermally unstable when Bremsstrahlung is the dominant cooling mechanism. Within the parameter regime used and in the absence of magnetic fields, the torus-plasma is highly time-dependent with supersonic oscillating motion with respect to the electron temperature. When the soft photons from the disk comptonize the electrons efficiently, the ion-pressure supported torus shrinks in volume, but decelerates further the inward motion into the hole. We speculate that magnetic fields would stabilize the tori by lowering its energy package through initiating jets and/or outflows. In the outer region, we find that the scale height of the angular velocity HΩ largely exceeds the scale height of the density Hρ. This yields a multi-layer flow-structure in the vertical direction which slows the inwards motion into the BH significantly, enhancing further the formation of the hot torus.

Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.

PubMed

Kim, Dohun; Syers, Paul; Butch, Nicholas P; Paglione, Johnpierre; Fuhrer, Michael S

2014-01-01

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near the charge neutrality point and at low temperatures, the gate-dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ∼0.5 × 10(12) cm(-2) per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low-dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three-dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

Polymers Containing Diphenylvinyl-Substituted Indole Rings as Charge-Transporting Materials for OLEDs

NASA Astrophysics Data System (ADS)

Grigalevicius, S.; Zostautiene, R.; Sipaviciute, D.; Stulpinaite, B.; Volyniuk, D.; Grazulevicius, J. V.; Liu, L.; Xie, Z.; Zhang, B.

2016-02-01

Monomers and polymers containing electronically isolated diphenylvinyl-substituted indole rings were synthesized and characterized by nuclear magnetic resonance (NMR) and mass spectroscopies as well as by gel permeation chromatography. The polymers represent amorphous materials with glass transition temperatures of 91-109°C and thermal decomposition starting above 307°C. Electron photoemission spectra of thin films of the synthesized polymers revealed ionization potentials of 5.54-5.58 eV. The synthesized polymers were tested as hole-transporting materials in simple electroluminescent organic light-emitting diode (OLED) devices with tris(quinolin-8-olato)aluminium (Alq3) as an emitter as well as an electron-transporting layer. A green OLED device containing a hole-transporting layer of poly[1-(2,3-epithiopropyl)-2-methyl-3-(2,2-diphenylvinyl)índole] exhibited the best overall performance with a driving voltage of 4.0 V, maximum photometric efficiency of 2.8 cd/A and maximum brightness of about 4200 cd/m2.

Spin-to-charge conversion for hot photoexcited electrons in germanium

NASA Astrophysics Data System (ADS)

Zucchetti, C.; Bottegoni, F.; Isella, G.; Finazzi, M.; Rortais, F.; Vergnaud, C.; Widiez, J.; Jamet, M.; Ciccacci, F.

2018-03-01

We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7-2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. The detected signal shows a sign inversion for h ν ≈1 eV which can be related to an interplay between the spin relaxation of high-energy electrons photoexcited from the heavy-hole and light-hole bands and that of low-energy electrons promoted from the split-off band. The inferred spin-Hall angle increases by about 3 orders of magnitude within the analyzed photon energy range. Since, for increasing photon energies, the phonon contribution to spin scattering exceeds that of impurities, our result indicates that the spin-to-charge conversion mediated by phonons is much more efficient than the one mediated by impurities.

Robust and efficient overset grid assembly for partitioned unstructured meshes

NASA Astrophysics Data System (ADS)

Roget, Beatrice; Sitaraman, Jayanarayanan

2014-03-01

This paper presents a method to perform efficient and automated Overset Grid Assembly (OGA) on a system of overlapping unstructured meshes in a parallel computing environment where all meshes are partitioned into multiple mesh-blocks and processed on multiple cores. The main task of the overset grid assembler is to identify, in parallel, among all points in the overlapping mesh system, at which points the flow solution should be computed (field points), interpolated (receptor points), or ignored (hole points). Point containment search or donor search, an algorithm to efficiently determine the cell that contains a given point, is the core procedure necessary for accomplishing this task. Donor search is particularly challenging for partitioned unstructured meshes because of the complex irregular boundaries that are often created during partitioning.

Graphene oxide hole transport layers for large area, high efficiency organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Chris T. G.; Rhodes, Rhys W.; Beliatis, Michail J.

2014-08-18

Graphene oxide (GO) is becoming increasingly popular for organic electronic applications. We present large active area (0.64 cm{sup 2}), solution processable, poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1, 3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]:[6,6]-Phenyl C{sub 71} butyric acid methyl ester (PCDTBT:PC{sub 70}BM) organic photovoltaic (OPV) solar cells, incorporating GO hole transport layers (HTL). The power conversion efficiency (PCE) of ∼5% is the highest reported for OPV using this architecture. A comparative study of solution-processable devices has been undertaken to benchmark GO OPV performance with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) HTL devices, confirming the viability of GO devices, with comparable PCEs, suitable as high chemical and thermal stability replacements for PEDOT:PSS in OPV.

Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions.

PubMed

Parzefall, M; Bharadwaj, P; Jain, A; Taniguchi, T; Watanabe, K; Novotny, L

2015-12-01

The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

Spectroscopic detection and analysis of atomic emissions during industrial pulsed laser-drilling of structural aerospace alloys

NASA Astrophysics Data System (ADS)

Bright, Robin Michael

The ability to adequately cool internal gas-turbine engine components in next-generation commercial and military aircraft is of extreme importance to the aerospace industry as the demand for high-efficiency engines continues to push operating temperatures higher. Pulsed laser-drilling is rapidly becoming the preferred method of creating cooling holes in high temperature components due a variety of manufacturing advantages of laser-drilling over conventional hole-drilling techniques. As cooling requirements become more demanding, the impact of drilling conditions on material removal behavior and subsequent effects on hole quality becomes critical. In this work, the development of emission spectroscopy as a method to probe the laser-drilling process is presented and subsequently applied to the study of material behavior of various structural aerospace materials during drilling. Specifically, emitted photons associated with energy level transitions within excited neutral atoms in material ejected during drilling were detected and analyzed. Systematic spectroscopic studies indicated that electron energy level populations and calculated electron temperatures within ejected material are dependent on both laser pulse energy and duration. Local thermal conditions detected by the developed method were related to the characteristics of ejected material during drilling and to final hole quality. Finally, methods of utilizing the observed relationships for spectroscopic process monitoring and control were demonstrated.

Structural and Functional Characterization of a Hole-Hole Homodimer Variant in a "Knob-Into-Hole" Bispecific Antibody.

PubMed

Zhang, Hui-Min; Li, Charlene; Lei, Ming; Lundin, Victor; Lee, Ho Young; Ninonuevo, Milady; Lin, Kevin; Han, Guanghui; Sandoval, Wendy; Lei, Dongsheng; Ren, Gang; Zhang, Jennifer; Liu, Hongbin

2017-12-19

Bispecific antibodies have great potential to be the next-generation biotherapeutics due to their ability to simultaneously recognize two different targets. Compared to conventional monoclonal antibodies, knob-into-hole bispecific antibodies face unique challenges in production and characterization due to the increase in variant possibilities, such as homodimerization in covalent and noncovalent forms. In this study, a storage- and pH-sensitive hydrophobic interaction chromatography (HIC) profile change was observed for the hole-hole homodimer, and the multiple HIC peaks were explored and shown to be conformational isomers. We combined traditional analytical methods with hydrogen/deuterium exchange mass spectrometry (HDX MS), native mass spectrometry, and negative-staining electron microscopy to comprehensively characterize the hole-hole homodimer. HDX MS revealed conformational changes at the resolution of a few amino acids overlapping the C H 2-C H 3 domain interface. Conformational heterogeneity was also assessed by HDX MS isotopic distribution. The hole-hole homodimer was demonstrated to adopt a more homogeneous conformational distribution during storage. This conformational change is likely caused by a lack of C H 3 domain dimerization (due to the three "hole" point mutations), resulting in a unique storage- and pH-dependent conformational destabilization and refolding of the hole-hole homodimer Fc. Compared with the hole-hole homodimer under different storage conditions, the bispecific heterodimer, guided by the knob-into-hole assembly, proved to be a stable conformation with homogeneous distribution, confirming its high quality as a desired therapeutic. Functional studies by antigen binding and neonatal Fc receptor (FcRn) binding correlated very well with the structural characterization. Comprehensive interpretation of the results has provided a better understanding of both the homodimer variant and the bispecific molecule.

Interfacial disorder drives charge separation in molecular semiconductors

NASA Astrophysics Data System (ADS)

Willard, Adam

One of the fundamental microscopic processes in photocurrent generation is the dissociation of neutral photo-excitations (i.e., Frenkel excitons) into free charge carriers (i.e., electrons and holes). This process requires the physical separation of oppositely charged electrons and holes, which are held to together by an attractive electrostatic binding energy. In traditional inorganic-based photovoltaic (PV) materials, this binding energy is generally small and easily overcome, however, in organic-based PVs (OPVs) the exciton binding energy can significantly exceed thermal energies. The inability of bound charges to overcome this large binding energy has been implicated as a primary source of efficiency loss in OPVs. Here I present results from our recent efforts to explore the role of static molecular disorder in mediating this process. Using a simple lattice model of exciton dynamics we demonstrate that random spatial variations in the energetic landscape can mitigate the attractive Coulomb interaction between electrons and holes. We show that this effect manifests as a reduction in the free energy barrier for exciton dissociation that grows more pronounced with increasing disorder. By considering the competition between this thermodynamic effect and the disorder-induced slowing of dissociation kinetics we demonstrate that exciton dissociation yields are expected to depend non-monotonically on the degree of static disorder.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

A novel perovskite solar cell design using aligned TiO2 nano-bundles grown on a sputtered Ti layer and a benzothiadiazole-based, dopant-free hole-transporting material.

PubMed

Ameen, Sadia; Nazim, M; Akhtar, M Shaheer; Nazeeruddin, Mohammad Khaja; Shin, Hyung-Shik

2017-11-16

This work highlights the utilization of a novel hole-transporting material (HTM) derived from benzothiadiazole: 4-(3,5-bis(trifluoromethyl)phenyl)-7-(5'-hexyl-[2,2'-bithiophen]-5-yl)benzo[c][1,2,5]thiadiazole (CF-BTz-ThR) and aligned TiO 2 nano-bundles (TiO 2 NBs) as the electron transporting layer (ETL) for perovskite solar cells (PSCs). The aligned TiO 2 NBs were grown on titanium (Ti)-coated FTO substrates using a facile hydrothermal method. The newly designed CF-BTz-ThR molecule with suitable highest occupied molecular orbital (HOMO) favored the effective hole injection from perovskite deposited aligned TiO 2 NBs thin film. The PSCs demonstrated a power conversion efficiency (PCE) of ∼15.4% with a short circuit current density (J sc ) of ∼22.42 mA cm -2 and an open circuit voltage (V oc ) of ∼1.02 V. The efficiency data show the importance of proper molecular engineering whilst highlighting the advantages of dopant-free HTMs in PSCs.

Considerations for fine hole patterning for the 7nm node

NASA Astrophysics Data System (ADS)

Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Koike, Kyohei

2016-03-01

One of the practical candidates to produce 7nm node logic devices is to use the multiple patterning with 193-immersion exposure. For the multiple patterning, it is important to evaluate the relation between the number of mask layer and the minimum pitch systematically to judge the device manufacturability. Although the number of the time of patterning, namely LE(Litho-Etch) ^ x-time, and overlay steps have to be reduced, there are some challenges in miniaturization of hole size below 20nm. Various process fluctuations on contact hole have a direct impact on device performance. According to the technical trend, 12nm diameter hole on 30nm-pitch hole will be needed on 7nm node. Extreme ultraviolet lithography (EUV) and Directed self-assembly (DSA) are attracting considerable attention to obtain small feature size pattern, however, 193-immersion still has the potential to extend optical lithography cost-effectively for sub-7nm node. The objective of this work is to study the process variation challenges and resolution in post-processing for the CD-bias control to meet sub-20nm diameter contact hole. Another pattern modulation is also demonstrated during post-processing step for hole shrink. With the realization that pattern fidelity and pattern placement management will limit scaling long before devices and interconnects fail to perform intrinsically, the talk will also outline how circle edge roughness (CER) and Local-CD uniformity can correct efficiency. On the other hand, 1D Gridded-Design-Rules layout (1D layout) has simple rectangular shapes. Also, we have demonstrated CD-bias modification on short trench pattern to cut grating line for its fabrication.

Nanostructured Electron-Selective Interlayer for Efficient Inverted Organic Solar Cells.

PubMed

Song, Jiyun; Lim, Jaehoon; Lee, Donggu; Thambidurai, M; Kim, Jun Young; Park, Myeongjin; Song, Hyung-Jun; Lee, Seonghoon; Char, Kookheon; Lee, Changhee

2015-08-26

We report a unique nanostructured electron-selective interlayer comprising of In-doped ZnO (ZnO:In) and vertically aligned CdSe tetrapods (TPs) for inverted polymer:fullerene bulkheterojunction (BHJ) solar cells. With dimension-controlled CdSe TPs, the direct inorganic electron transport pathway is provided, resulting in the improvement of the short circuit current and fill factor of devices. We demonstrate that the enhancement is attributed to the roles of CdSe TPs that reduce the recombination losses between the active layer and buffer layer, improve the hole-blocking as well as electron-transporting properties, and simultaneously improve charge collection characteristics. As a result, the power conversion efficiency of PTB7:PC70BM based solar cell with nanostructured CdSe TPs increases to 7.55%. We expect this approach can be extended to a general platform for improving charge extraction in organic solar cells.

Organic n-type materials for charge transport and charge storage applications.

PubMed

Stolar, Monika; Baumgartner, Thomas

2013-06-21

Conjugated materials have attracted much attention toward applications in organic electronics in recent years. These organic species offer many advantages as potential replacement for conventional materials (i.e., silicon and metals) in terms of cheap fabrication and environmentally benign devices. While p-type (electron-donating or hole-conducting) materials have been extensively reviewed and researched, their counterpart n-type (electron-accepting or electron-conducting) materials have seen much less popularity despite the greater need for improvement. In addition to developing efficient charge transport materials, it is equally important to provide a means of charge storage, where energy can be used on an on-demand basis. This perspective is focused on discussing a selection of representative n-type materials and the efforts toward improving their charge-transport efficiencies. Additionally, this perspective will also highlight recent organic materials for battery components and the efforts that have been made to improve their environmental appeal.

Photoanode Thickness Optimization and Impedance Spectroscopic Analysis of Dye-Sensitized Solar Cells based on a Carbazole-Containing Ruthenium Dye

NASA Astrophysics Data System (ADS)

Choi, Jongwan; Kim, Felix Sunjoo

2018-03-01

We studied the influence of photoanode thickness on the photovoltaic characteristics and impedance responses of the dye-sensitized solar cells based on a ruthenium dye containing a hexyloxyl-substituted carbazole unit (Ru-HCz). As the thickness of photoanode increases from 4.2 μm to 14.8 μm, the dye-loading amount and the efficiency increase. The device with thicker photoanode shows a decrease in the efficiency due to the higher probability of recombination of electron-hole pairs before charge extraction. We also analyzed the electron-transfer and recombination characteristics as a function of photoanode thickness through detailed electrochemical impedance spectroscopy analysis.

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Observations of electron phase-space holes driven during magnetic reconnection in a laboratory plasma

NASA Astrophysics Data System (ADS)

Fox, W.; Porkolab, M.; Egedal, J.; Katz, N.; Le, A.

2012-03-01

This work presents detailed experimental observations of electron phase-space holes driven during magnetic reconnection events on the Versatile Toroidal Facility. The holes are observed to travel on the order of or faster than the electron thermal speed, and are of large size scale, with diameter of order 60 Debye lengths. In addition, they have 3D spheroidal structure with approximately unity aspect ratio. We estimate the direct anomalous resistivity due to ion interaction with the holes and find it to be too small to affect the reconnection rate; however, the holes may play a role in reining in a tail of accelerated electrons and they indicate the presence of other processes in the reconnection layer, such as electron energization and electron beam formation.

Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

PubMed Central

Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

2015-01-01

Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

D-A-D-Typed Hole Transport Materials for Efficient Perovskite Solar Cells: Tuning Photovoltaic Properties via the Acceptor Group.

PubMed

Xu, Peng; Liu, Peng; Li, Yuanyuan; Xu, Bo; Kloo, Lars; Sun, Licheng; Hua, Yong

2018-06-13

Two D-A-D-structured hole-transport materials (YN1 and YN2) have been synthesized and used in perovskite solar cells. The two HTMs have low-lying HOMO levels and impressive mobility. Perovskite-based solar cells (PSCs) fabricated with YN2 showed a power conversion efficiency (PCE) value of 19.27% in ambient air, which is significantly higher than that of Spiro-OMeTAD (17.80%). PSCs based on YN1 showed an inferior PCE of 16.03%. We found that the incorporation of the stronger electron-withdrawing group in the HTM YN2 improves the PCE of PSCs. Furthermore, the YN2-based PSCs exhibit good long-term stability retaining 91.3% of its initial efficiency, whereas PSCs based on Spiro-OMeTAD retained only 42.2% after 1000 h lifetime (dark conditions). These promising results can provide a new strategy for the design of D-A-D HTMs for PSC applications in future.

Quasi-Two-Dimensional Electron-Hole Liquid in Shallow SiGe/Si Quantum Wells

NASA Astrophysics Data System (ADS)

Vasilchenko, A. A.; Kopytov, G. F.; Krivobok, V. S.

2018-06-01

An analytical expression is obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) in shallow quantum wells. It is shown that in the Si/Si1-xGex/Si structures with small x, the EHL contains light and heavy holes. With increasing x, the transition of EHL to a state with heavy holes occurs, and the equilibrium density of electron-hole pairs strongly decreases. The effect of an external electric field on the EHL properties is studied.

Effect of proton transfer on the electronic coupling in DNA

NASA Astrophysics Data System (ADS)

Rak, Janusz; Makowska, Joanna; Voityuk, Alexander A.

2006-06-01

The effects of single and double proton transfer within Watson-Crick base pairs on donor-acceptor electronic couplings, Vda, in DNA are studied on the bases of quantum chemical calculations. Four dimers [AT,AT], [GC,GC], [GC,AT] and [GC,TA)] are considered. Three techniques - the generalized Mulliken-Hush scheme, the fragment charge method and the diabatic states method - are employed to estimate Vda for hole transfer between base pairs. We show that both single- and double proton transfer (PT) reactions may substantially affect the electronic coupling in DNA. The electronic coupling in [AT,AT] is predicted to be most sensitive to PT. Single PT within the first base pair in the dimer leads to increase in the hole transfer efficiency by a factor of 4, while proton transfer within the second pair should substantially, by 2.7 times, decrease the rate of charge transfer. Thus, directional asymmetry of the PT effects on the electronic coupling is predicted. The changes in the Vda matrix elements correlate with the topological properties of orbitals of donor and acceptor and can be qualitatively rationalized in terms of resonance structures of donor and acceptor. Atomic pair contributions to the Vda matrix elements are also analyzed.

Designing Two-Dimensional Dirac Heterointerfaces of Few-Layer Graphene and Tetradymite-Type Sb2Te3 for Thermoelectric Applications.

PubMed

Jang, Woosun; Lee, Jiwoo; In, Chihun; Choi, Hyunyong; Soon, Aloysius

2017-12-06

Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb 2 Te 3 (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb 2 Te 3 and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.

Direct Observation of Photoexcited Hole Localization in CdSe Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ye; Wu, Kaifeng; Shabaev, Andrew

Quantum-confined 1D semiconductor nanostructures are being investigated for hydrogen generation photocatalysts. In the photoreaction, after fast electron transfer, holes that remain in the nanostructure play an important role in the total quantum yield of hydrogen production. Unfortunately, knowledge of hole dynamics is limited due to lack of convenient spectroscopic signatures. Here, we directly probe hole localization dynamics within CdSe nanorods (NRs) by combining transient absorption (TA) and time-resolved terahertz (TRTS) spectroscopy. We show that when methylene blue is used as an electron acceptor, the resulting electron transfer occurs with a time constant of 3.5 +/- 0.1 ps and leaves behindmore » a delocalized hole. However, the hole quickly localizes in the Coulomb potential well generated by the reduced electron acceptor near the NR surface with time constant of 11.7 +/- 0.2 ps. Our theoretical investigation suggests that the hole becomes confined to a ~ +/-0.8 nm region near the reduced electron acceptor and the activation energy to detrap the hole from the potential well can be as large as 235 meV.« less

Nano-scale engineering using lead chalcogenide nanocrystals for opto-electronic applications

NASA Astrophysics Data System (ADS)

Xu, Fan

Colloidal quantum dots (QDs) or nanocrystals of inorganic semiconductors exhibit exceptional optoelectronic properties such as tunable band-gap, high absorption cross-section and narrow emission spectra. This thesis discusses the characterizations and physical properties of lead-chalcogenide nanocrystals, their assembly into more complex nanostructures and applications in solar cells and near-infrared light-emitting devices. In the first part of this work, we demonstrate that the band edge emission of PbS quantum dots can be tuned from the visible to the mid-infrared region through size control, while the self-attachment of PbS nanocrystals can lead to the formation of 1-D nanowires, 2-D quantum dot monolayers and 3-D quantum dot solids. In particular, the assembly of closely-packed quantum dot solids has attracted enormous attention. A series of distinctive optoelectronic properties has been observed, such as superb multiple exciton generation efficiencies, efficient hot-electron transfer and cold-exciton recycling. Since the surfactant determines the quantum dot surface passivation and inter dot electronic coupling, we examine the influence of different cross-linking surfactants on the optoelectronic properties of the quantum dot solids. Then, we discuss the ability to tune the quantum dot band-gap combined with the controllable assembly of lead-chalcogenide quantum dots, which opens new possibilities to engineer the properties of quantum dot solids. The PbS and PbSe quantum dot cascade structures and PbS/PbSe quantum dot heterojunctions are assembled using the layer-by-layer deposition method. We show that exciton funnelling and trap state-bound exciton recycling in the quantum dot cascade structure dramatically enhances the quantum dots photoluminescence. Moreover, we show that both type-I and type-II PbS/PbSe quantum dot heterojunctions can be assembled by carefully choosing the quantum dot sizes. In type-I heterojunctions, the excited electron-hole pairs tend to localize in narrower band-gap quantum dots, leading to significant photoluminescence enhancement. In contrast, the staggered energy bands in type-II heterojunctions lead to rapid exciton separation at the junctions that considerably quenches the photoluminescence. As such, this strategy can be fruitfully employed to enhance performances in nanocrystal-based photovoltaic devices. Using this approach, we achieve efficient PbS nanocrystal-based solar cells using an ITO/ TiO2/ PbS QDs/Au architecture, where a porous TiO2 nanowire network is employed as electron transporting layer. Our best heterojunction solar cells exhibit a decent short circuit current of 2.5 mA/cm2, a large open circuit voltage of 0.6 V and a power converting efficiency of 5.4 % under 8.5 mW/cm2 low-light illumination. On the other hand, nanocrystal-based near infrared LED devices are fabricated using a simple ITO-PbS QDs-Al device structure. There, the active quantum dot layer serves as both the electron- and hole-transporting layer. With appropriate surface chemistry treatment on quantum dots, a high-brightness near-infrared LED device is achieved.

Theoretical study on phosphorescence efficiency and color tuning from orange to blue-green of Ir(III) complexes based on substituted 2-phenylimidazo[1,2-a]pyridine ligand.

PubMed

Li, Xiao-Na; Wu, Zhi-Jian; Li, Xi-Yan; Zhang, Hong-Jie; Liu, Xiao-Juan

2011-04-30

The geometrical structures, phosphorescence quantum yields, and electroluminescence (EL) efficiency of six iridium(III) complexes containing 2-phenylimidazo[1,2-a]pyridine ligand are investigated by density functional theory (DFT), which show a wide color tuning of photoluminescence from orange (λ(em) = 550 nm) to blue-green (λ(em) = 490 nm). The calculated results shed some light on the reasons of the remarkably manipulated excited-state and EL properties through substitution effect. The Mulliken charge calculation reveals that attached -CF(3) groups on phenyl and imidazo[1,2-a]pyridine (impy) moieties (4) can make both of them as electron-deficient region, which will lead to the contraction of the whole coordination sphere and strengthen the metal-ligand interaction. While attaching two -CF(3) groups on phenyl ring can make it more electron-deficient, which will induce electron transferring from acac and impy fragment to phenyl ring, and also result in the contracted structure. The largest metal-to-ligand charge transfer ((3)MLCT) character and the smaller S(1)-T(1) energy gap (ΔE(S(1)-T(1))) value increase the emission quantum yields of 4 and 6 than other complexes. For EL efficiency, because of the similar highest occupied molecular orbital (HOMO) levels of 4 and 6 to that of holes injection material poly(N-vinylcarbazole) (PVK) and the larger dipole moments, majority hole will be accumulated on the HOMO of 4 and 6. Combination with the lower lowest unoccupied molecular orbital energy levels compared with PVK, the recombination zones of 4 and 6 can be well confined within emitting material layer (EML) and lead to the higher EL efficiency. Copyright © 2010 Wiley Periodicals, Inc.

Photoelectrochemical behaviour of anatase nanoporous films: effect of the nanoparticle organization

NASA Astrophysics Data System (ADS)

Lana-Villarreal, Teresa; Mao, Yuanbing; Wong, Stanislaus S.; Gómez, Roberto

2010-09-01

The photoelectrochemical behaviour of anatase thin films with different nanoarchitectures and the same active surface area (or thickness) has been studied in acidic media in the absence and in the presence of formic acid. The electrodes were composed of either wire-like nanocrystal aggregates or commercial TiO2 nanoparticles. Cyclic voltammetry in the dark reveals a larger trap concentration in the band gap for the nanoparticulate (NP) electrodes, which can be ascribed to a larger number of intergrain boundaries. Also under illumination, the behaviour for both types of anatase structures significantly differs: water photooxidation arises at more negative potentials for the nanocolumnar (NC) electrodes. In the presence of an efficient hole acceptor such as HCOOH, significantly larger photocurrents were noted for the NC films as compared with those for the NP electrodes, with the photocurrent onset also shifted towards more positive potentials for the latter. These results point to a diminished electron recombination, which can be related with a smaller concentration of intergrain boundaries, together with a more efficient HCOOH hole transfer for the wire-like nanocrystal aggregate architecture. In addition, the oxygen reduction reaction is also favoured in the case of NC electrodes.The photoelectrochemical behaviour of anatase thin films with different nanoarchitectures and the same active surface area (or thickness) has been studied in acidic media in the absence and in the presence of formic acid. The electrodes were composed of either wire-like nanocrystal aggregates or commercial TiO2 nanoparticles. Cyclic voltammetry in the dark reveals a larger trap concentration in the band gap for the nanoparticulate (NP) electrodes, which can be ascribed to a larger number of intergrain boundaries. Also under illumination, the behaviour for both types of anatase structures significantly differs: water photooxidation arises at more negative potentials for the nanocolumnar (NC) electrodes. In the presence of an efficient hole acceptor such as HCOOH, significantly larger photocurrents were noted for the NC films as compared with those for the NP electrodes, with the photocurrent onset also shifted towards more positive potentials for the latter. These results point to a diminished electron recombination, which can be related with a smaller concentration of intergrain boundaries, together with a more efficient HCOOH hole transfer for the wire-like nanocrystal aggregate architecture. In addition, the oxygen reduction reaction is also favoured in the case of NC electrodes. Electronic supplementary information (ESI) available: Typical spectral irradiance of a 150 W Xe arc lamp, TEM images, Raman spectra, XRD patterns, cyclic voltammograms, modified Kubelka-Munk function and Incident Photon to Current Efficiency versus wavelength. See DOI: 10.1039/c0nr00140f

Efficient planar Sb2S3 solar cells using a low-temperature solution-processed tin oxide electron conductor.

PubMed

Lei, Hongwei; Yang, Guang; Guo, Yaxiong; Xiong, Liangbin; Qin, Pingli; Dai, Xin; Zheng, Xiaolu; Ke, Weijun; Tao, Hong; Chen, Zhao; Li, Borui; Fang, Guojia

2016-06-28

Efficient planar antimony sulfide (Sb2S3) heterojunction solar cells have been made using chemical bath deposited (CBD) Sb2S3 as the absorber, low-temperature solution-processed tin oxide (SnO2) as the electron conductor and poly (3-hexylthiophene) (P3HT) as the hole conductor. A solar conversion efficiency of 2.8% was obtained at 1 sun illumination using a planar device consisting of F-doped SnO2 substrate/SnO2/CBD-Sb2S3/P3HT/Au, whereas the solar cells based on a titanium dioxide (TiO2) electron conductor exhibited a power conversion efficiency of 1.9%. Compared with conventional Sb2S3 sensitized solar cells, the high-temperature processed mesoscopic TiO2 scaffold is no longer needed. More importantly, a low-temperature solution-processed SnO2 layer was introduced for electron transportation to substitute the high-temperature sintered dense blocking TiO2 layer. Our planar solar cells not only have simple geometry with fewer steps to fabricate but also show enhanced performance. The higher efficiency of planar Sb2S3 solar cell devices based on a SnO2 electron conductor is attributed to their high transparency, uniform surface, efficient electron transport properties of SnO2, suitable energy band alignment, and reduced recombination at the interface of SnO2/Sb2S3.

Shell effect on the electron and hole reorganization energy of core-shell II-VI nanoclusters

NASA Astrophysics Data System (ADS)

Cui, Xianhui; Wang, Xinqin; Yang, Fang; Cui, Yingqi; Yang, Mingli

2017-09-01

Density functional theory calculations were performed to study the effect of shell encapsulation on the geometrical and electronic properties of pure and hybrid core-shell CdSe nanoclusters. The CdSe cores are distorted by the shells, and the shells exhibit distinct surface activity from the cores, which leads to remarkable changes in their electron transition behaviors. Although the electron and hole reorganization energies, which are related to the formation and recombination of electron-hole pairs, vary in a complicated way, their itemized contributions, potentials of electron extraction, ionization and affinity, and hole extraction (HEP), are dependent on the cluster size, shell composition and/or solvent. Our calculations suggest that the behaviors of charge carriers, free electrons and holes, in the semiconductor core-shell nanoclusters can be modulated by selecting appropriate cluster size and controlling the chemical composition of the shells.

Y2O3 modified TiO2 nanosheets enhanced the photocatalytic removal of 4-chlorophenol and Cr (VI) in sun light

NASA Astrophysics Data System (ADS)

Zhao, Xiaona; Wu, Pei; Liu, Min; Lu, Dingze; Ming, Junlan; Li, Chunhe; Ding, Junqian; Yan, Qiuyang; Fang, Pengfei

2017-07-01

Y2O3 modified TiO2 nanosheets (Y2O3@TNSs), capable of exhibiting sun light, were synthesized through one pot/hydrothermal method using Y (NO3)3 as precursor. Multiple techniques were applied to investigate the structures, morphologies, optical and electronic properties and photocatalytic performance of the as-prepared samples. The Y2O3@TNSs, with thickness of approximately 3-4 nm, large surface area of 240-350 m2/g, were full of Y2O3 nanoparticles highly dispersed on the surface. The introduction of Y2O3 influenced the crystallinity and the structure evolution of TNSs, besides, improved the light absorption ability. The surface photo-current and fluorescence spectral studies revealed that the photo-generated charge carrier separation efficiency could be improved by an appropriate modification. The degradation activity of this sun-light-induced photocatalytic has enhanced apparently on 4-Chlorophenol and K2Cr2O7 solution, the degradation efficiency of 4-Chlorophenol reached 5.69 times than that of P25, and the maximum TOC removal obtained after 120 min was 67.6%, indicating that most organic compounds were released from the solution. The enhancement in the photocatalytic activity was attributed to the synergetic effect of the Y2O3 and TNSs, which led to a fast separation and slow recombination of photo-induced electron-hole pairs. Consequently, the high efficiency in the experiments showed a promising application of the catalyst in the oxidation or reduction degradation of organic pollutants.

A naphthodithiophene-diketopyrrolopyrrole donor molecule for efficient solution-processed solar cells.

PubMed

Loser, Stephen; Bruns, Carson J; Miyauchi, Hiroyuki; Ortiz, Rocío Ponce; Facchetti, Antonio; Stupp, Samuel I; Marks, Tobin J

2011-06-01

We report the synthesis, characterization, and first implementation of a naphtho[2,3-b:6,7-b']dithiophene (NDT)-based donor molecule in highly efficient organic photovoltaics (OPVs). When NDT(TDPP)(2) (TDPP = thiophene-capped diketopyrrolopyrrole) is combined with the electron acceptor PC(61)BM, a power conversion efficiency (PCE) of 4.06 ± 0.06% is achieved-a record for a PC(61)BM-based small-molecule OPV. The substantial PCE is attributed to the broad, high oscillator strength visible absorption, the ordered molecular packing, and an exceptional hole mobility of NDT(TDPP)(2). © 2011 American Chemical Society

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyunbok; Lee, Jeihyun; Yi, Yeonjin, E-mail: yeonjin@yonsei.ac.kr

Metal phthalocyanines (MPcs) are well known as an efficient hole injection layer (HIL) in organic devices. They possess a low ionization energy, and so the low-lying highest occupied molecular orbital (HOMO) gives a small hole injection barrier from an anode in organic light-emitting diodes. However, in this study, we show that the hole injection characteristics of MPc are not only determined by the HOMO position but also significantly affected by the wave function distribution of the HOMO. We show that even with the HOMO level of a manganese phthalocyanine (MnPc) HIL located between the Fermi level of an indium tinmore » oxide anode and the HOMO level of a N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine hole transport layer the device performance with the MnPc HIL is rather deteriorated. This anomalous hole injection deterioration is due to the contracted HOMO wave function, which leads to small intermolecular electronic coupling. The origin of this contraction is the significant contribution of the Mn d-orbital to the MnPc HOMO.« less

MEAN FREE PATH OF HOT ELECTRONS AND HOLES IN METALS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuart, R.N.; Wooten, F.; Spicer, W.E.

1963-01-01

The mean free paths and attenuation lengths of hot electrons and holes in metals are calculated by Morte Cario methods. The results are compared with experimental results for electrons in Au,-Ag, Cu, and Pd and holes in Au. (T.F.H.)

Near-Infrared Plasmon-Assisted Water Oxidation.

PubMed

Nishijima, Yoshiaki; Ueno, Kosei; Kotake, Yuki; Murakoshi, Kei; Inoue, Haruo; Misawa, Hiroaki

2012-05-17

We report the stoichiometric evolution of oxygen via water oxidation by irradiating a plasmon-enhanced photocurrent generation system with near-infrared light (λ: 1000 nm), in which gold nanostructures were arrayed on the surface of TiO2 electrode. It is considered that multiple electron holes generated by plasmon-induced charge excitation led to the effective recovery of water oxidation after the electron transfer from gold to TiO2. The proposed system containing a gold nanostructured TiO2 electrode may be a promising artificial photosynthetic system using near-infrared light.

Monte-Carlo modelling of nano-material photocatalysis: bridging photocatalytic activity and microscopic charge kinetics.

PubMed

Liu, Baoshun

2016-04-28

In photocatalysis, it is known that light intensity, organic concentration, and temperature affect the photocatalytic activity by changing the microscopic kinetics of holes and electrons. However, how the microscopic kinetics of holes and electrons relates to the photocatalytic activity was not well known. In the present research, we developed a Monte-Carlo random walking model that involved all of the charge kinetics, including the photo-generation, the recombination, the transport, and the interfacial transfer of holes and electrons, to simulate the overall photocatalytic reaction, which we called a "computer experiment" of photocatalysis. By using this model, we simulated the effect of light intensity, temperature, and organic surface coverage on the photocatalytic activity and the density of the free electrons that accumulate in the simulated system. It was seen that the increase of light intensity increases the electron density and its mobility, which increases the probability for a hole/electron to find an electron/hole for recombination, and consequently led to an apparent kinetics that the quantum yield (QY) decreases with the increase of light intensity. It was also seen that the increase of organic surface coverage could increase the rate of hole interfacial transfer and result in the decrease of the probability for an electron to recombine with a hole. Moreover, the increase of organic coverage on the nano-material surface can also increase the accumulation of electrons, which enhances the mobility for electrons to undergo interfacial transfer, and finally leads to the increase of photocatalytic activity. The simulation showed that the temperature had a more complicated effect, as it can simultaneously change the activation of electrons, the interfacial transfer of holes, and the interfacial transfer of electrons. It was shown that the interfacial transfer of holes might play a main role at low temperature, with the temperature-dependence of QY conforming to the Arrhenius model. The activation of electrons from the traps to the conduction band might become important at high temperature, which accelerates the electron movement for recombination and leads to a temperature dependence of QY that deviates from the Arrhenius model.

Multiple exciton generation and recombination in carbon nanotubes and nanocrystals.

PubMed

Kanemitsu, Yoshihiko

2013-06-18

Semiconducting nanomaterials such as single-walled carbon nanotubes (SWCNTs) and nanocrystals (NCs) exhibit unique size-dependent quantum properties. They have therefore attracted considerable attention from the viewpoints of fundamental physics and functional device applications. SWCNTs and NCs also provide an excellent new stage for experimental studies of many-body effects of electrons and excitons on optical processes in nanomaterials. In this Account, we discuss multiple exciton generation and recombination in SWCNTs and NCs for next-generation photovoltaics. Strongly correlated ensembles of conduction-band electrons and valence-band holes in semiconductors are complex quantum systems that exhibit unique optical phenomena. In bulk crystals, the carrier recombination dynamics can be described by a simple model, which includes the nonradiative single-carrier trapping rate, the radiative two-carrier recombination rate, and the nonradiative three-carrier Auger recombination rate. The nonradiative Auger recombination rate determines the carrier recombination dynamics at high carrier density and depends on the spatial localization of carriers in two-dimensional quantum wells. The Auger recombination and multiple exciton generation rates can be advantageously manipulated by nanomaterials with designated energy structures. In addition, SWCNTs and NCs show quantized recombination dynamics of multiple excitons and carriers. In one-dimensional SWCNTs, excitons have large binding energies and are very stable at room temperature. The extremely rapid Auger recombination between excitons determines the photoluminescence (PL) intensity, the PL linewidth, and the PL lifetime. SWCNTs can undergo multiple exciton generation, while strong exciton-exciton interactions and complicated exciton structures affect the quantized Auger rate and the multiple exciton generation efficiency. Interestingly, in zero-dimensional NC quantum dots, quantized Auger recombination causes unique optical phenomena. The breakdown of the k-conversion rule and strong Coulomb interactions between carriers in NCs enhance Auger recombination rate and decrease the energy threshold for multiple exciton generation. We discuss this impact of the k-conservation rule on two-carrier radiative recombination and the three-carrier Auger recombination processes in indirect-gap semiconductor Si NCs. In NCs and SWCNTs, multiple exciton generation competes with Auger recombination, surface trapping of excitons, and cooling of hot electrons or excitons. In addition, we explore heterostructured NCs and impurity-doped NCs in the context of the optimization of charge carrier extraction from excitons in NCs.

Efficient Carrier-to-Exciton Conversion in Field Emission Tunnel Diodes Based on MIS-Type van der Waals Heterostack.

PubMed

Wang, Shunfeng; Wang, Junyong; Zhao, Weijie; Giustiniano, Francesco; Chu, Leiqiang; Verzhbitskiy, Ivan; Zhou Yong, Justin; Eda, Goki

2017-08-09

We report on efficient carrier-to-exciton conversion and planar electroluminescence from tunnel diodes based on a metal-insulator-semiconductor (MIS) van der Waals heterostack consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS 2 ). These devices exhibit excitonic electroluminescence with extremely low threshold current density of a few pA·μm -2 , which is several orders of magnitude lower compared to the previously reported values for the best planar EL devices. Using a reference dye, we estimate the EL quantum efficiency to be ∼1% at low current density limit, which is of the same order of magnitude as photoluminescence quantum yield at the equivalent excitation rate. Our observations reveal that the efficiency of our devices is not limited by carrier-to-exciton conversion efficiency but by the inherent exciton-to-photon yield of the material. The device characteristics indicate that the light emission is triggered by injection of hot minority carriers (holes) to n-doped WS 2 by Fowler-Nordheim tunneling and that hBN serves as an efficient hole-transport and electron-blocking layer. Our findings offer insight into the intelligent design of van der Waals heterostructures and avenues for realizing efficient excitonic devices.

Construction of g-C3N4/CeO2/ZnO ternary photocatalysts with enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Yuan, Yuan; Huang, Gui-Fang; Hu, Wang-Yu; Xiong, Dan-Ni; Zhou, Bing-Xin; Chang, Shengli; Huang, Wei-Qing

2017-07-01

Promoting the spatial separation of photoexcited charge carriers is of paramount significance for photocatalysis. In this work, binary g-C3N4/CeO2 nanosheets are first prepared by pyrolysis and subsequent exfoliation method, then decorated with ZnO nanoparticles to construct g-C3N4/CeO2/ZnO ternary nanocomposites with multi-heterointerfaces. Notably, the type-II staggered band alignments existing between any two of the constituents, as well as the efficient three-level transfer of electron-holes in unique g-C3N4/CeO2/ZnO ternary composites, leads to the robust separation of photoexcited charge carriers, as verified by its photocurrent increased by 8 times under visible light irradiation. The resulting g-C3N4/CeO2/ZnO ternary nanocomposites unveil appreciably increased photocatalytic activity, faster than that of pure g-C3N4, ZnO and g-C3N4/CeO2 by a factor of 11, 4.6 and 3.7, respectively, and good stability toward methylene blue (MB) degradation. The remarkably enhanced photocatalytic activity of g-C3N4/CeO2/ZnO ternary heterostructures can be interpreted in terms of lots of active sites of nanosheet shapes and the efficient charge separation owing to the resulting type-II band alignment with more than one heterointerface and the efficient three-level electron-hole transfer. A plausible mechanism is also elucidated via active species trapping experiments with various scavengers, which indicating that the photogenerated holes and •OH radicals play a crucial role in photodegradation reaction under visible light irradiation. This work suggest that the rational design and construction of type II multi-heterostructures is powerful for developing highly efficient and reusable visible-light photocatalysts for environmental purification and energy conversion.

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

PubMed Central

Ning, Feng; Tang, Li-Ming; Zhang, Yong; Chen, Ke-Qiu

2015-01-01

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping. PMID:26028535

Simulation of mixed-host emitting layer based organic light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riku, C.; Kee, Y. Y.; Ong, T. S.

2015-04-24

‘SimOLED’ simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq{sub 3}) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq{sub 3} of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employedmore » to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.« less

The fate of electron-hole pairs in polymer:fullerene blends for organic photovoltaics

NASA Astrophysics Data System (ADS)

Causa', Martina; de Jonghe-Risse, Jelissa; Scarongella, Mariateresa; Brauer, Jan C.; Buchaca-Domingo, Ester; Moser, Jacques-E.; Stingelin, Natalie; Banerji, Natalie

2016-09-01

There has been long-standing debate on how free charges are generated in donor:acceptor blends that are used in organic solar cells, and which are generally comprised of a complex phase morphology, where intermixed and neat phases of the donor and acceptor material co-exist. Here we resolve this question, basing our conclusions on Stark effect spectroscopy data obtained in the absence and presence of externally applied electric fields. Reconciling opposing views found in literature, we unambiguously demonstrate that the fate of photogenerated electron-hole pairs--whether they will dissociate to free charges or geminately recombine--is determined at ultrafast times, despite the fact that their actual spatial separation can be much slower. Our insights are important to further develop rational approaches towards material design and processing of organic solar cells, assisting to realize their purported promise as lead-free, third-generation energy technology that can reach efficiencies over 10%.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NASA Astrophysics Data System (ADS)

Abbaszadeh, Davood; Nicolai, Herman T.; Crǎciun, N. Irina; Blom, Paul W. M.

2014-11-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N ,N ,N',N' tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict that a concentration of 5% HTU leads to an optimal efficiency for this blue-emitting polymer. However, experimentally an optimum performance is achieved for 10% TAD HTUs. Analysis of the transport and recombination shows that polymer light-emitting diodes with 5%, 7.5%, and 12.5% TAD units follow the predicted behavior. The enhanced performance of the polymer with 10% TAD originates from a decrease in the number of electron traps, which is typically a factor of three lower than the universal value found in many polymers. This reduced number of traps leads to a reduction of nonradiative recombination and exciton quenching at the cathode.

Polyaniline Nanofibers as the Hole Transport Medium in an Inverse Dye-Sensitized Solar Cell

NASA Astrophysics Data System (ADS)

Hesselsweet, Ian Brock

In order to become a viable alternative to silicon photovoltaics, dye-sensitized solar cells must overcome several issues primarily resulting from their use of a liquid electrolyte. Much research has gone into correcting these shortcomings by replacing the liquid electrolyte with solid-state hole-transport media. Using these solid-state materials brings new difficulties, such as completely filling the pores in the TiO2 nanostructure, and achieving good adhesion with the dye-coated TiO2. A novel approach to addressing these difficulties is the inverse dye-sensitized solar cell design. In this method the devices are constructed in reverse order, with the solidstate hole-transport medium providing the nanostructure instead of the TiO2. This allows new materials and methods to be used which may better address these issues. In this project, inverse dye-sensitized solar cells using polyaniline nanofibers as the hole transport medium were prepared and characterized. The devices were prepared on fluorine-doped tin oxide (FTO) coated glass electrodes. The first component was a dense spin-coated polyaniline blocking layer, to help prevent short circuiting of the devices. The second layer was a thin film of drop cast polyaniline nanofibers which acted as the hole transport medium and provided high surface area for the dye attachment. The dye used was 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin (TCPP), which was covalently attached to the nanofibers using a Friedel-Crafts acylation. Titania gel was then deposited into the pores of the nanofiber film by controlled hydrolysis of a titanium complex (Tyzor LA). A back electrode of TiO2 nanoparticles sintered on FTO was pressed on top to complete the devices. A typical device generated an open circuit voltage of 0.17 V and a closed circuit current of 5.7 nA/cm2 while the highest open circuit voltage recorded for any variation on a device was 0.31 V and the highest short circuit current was 52 nA/cm2 under AM 1.5 simulated solar spectrum at 100 mW/cm2. Initially prepared devices did not generate a measureable photocurrent due to two materials flaws. The first was traced to the poorly developed conduction band of the titania gel, as deposited from Tyzor LA hydrolysis, resulting in poor electron conduction. This prevented the titania gel from efficiently functioning as the electron transport medium. A remedy was found in adding a layer of sintered anatase TiO2 nanoparticles on the back electrode to serve as the electron transport medium. However, this remedy does not address the issue of the inability of titania gel to efficiently transport electrons photogenerated deep in the nanofiber film to the back electrode. The second flaw was found to originate from fast recombination kinetics between electrons in TiO2 and holes in polyaniline. However, a positive feature was that the titania gel intended to be used as the electron transport medium was found to sufficiently insulate the interface such that the recombination rate slowed enough to allow generation of a measureable photocurrent. Electronic insulation was further enhanced by co-attaching decanoic acid onto the polyaniline nanofibers to fill in pinholes between the dye molecules. While these solutions were not ideal, they were intended to be diagnostic in nature and supplied critical information about the weak links in the device design, thus pointing the way toward improving device performance. Significant enhancements can be expected by addressing these issues in further detail.

The highly efficient photocatalytic and light harvesting property of Ag-TiO2 with negative nano-holes structure inspired from cicada wings.

PubMed

Zada, Imran; Zhang, Wang; Zheng, Wangshu; Zhu, Yuying; Zhang, Zhijian; Zhang, Jianzhong; Imtiaz, Muhammad; Abbas, Waseem; Zhang, Di

2017-12-08

The negative replica of biomorphic TiO 2 with nano-holes structure has been effectively fabricated directly from nano-nipple arrays structure of cicada wings by using a simple, low-cost and highly effective sol-gel ultrasonic method. The nano-holes array structure was well maintained after calcination in air at 500 °C. The Ag nanoparticles (10 nm-25 nm) were homogeneously decorated on the surface and to the side wall of nano-holes structure. It was observed that the biomorphic Ag-TiO 2 showed remarkable photocatalytic activity by degradation of methyl blue (MB) under UV-vis light irradiation. The biomorphic Ag-TiO 2 with nano-holes structure showed superior photocatalytic activity compared to the biomorphic TiO 2 and commercial Degussa P25. This high-performance photocatalytic activity of the biomorphic Ag-TiO 2 may be attributed to the nano-holes structure, localized surface plasmon resonance (LSPR) property of the Ag nanoparticles, and enhanced electron-hole separation. Moreover, the biomorphic Ag-TiO 2 showed more absorption capability in the visible wavelength range. This work provides a new insight to design such a structure which may lead to a range of novel applications.

Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

PubMed Central

Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

2016-01-01

We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

High-order harmonic generation in solid slabs beyond the single-active-electron approximation

NASA Astrophysics Data System (ADS)

Hansen, Kenneth K.; Deffge, Tobias; Bauer, Dieter

2017-11-01

High-harmonic generation by a laser-driven solid slab is simulated using time-dependent density functional theory. Multiple harmonic plateaus up to very high harmonic orders are observed already at surprisingly low field strengths. The full all-electron harmonic spectra are, in general, very different from those of any individual Kohn-Sham orbital. Freezing the Kohn-Sham potential instead is found to be a good approximation for the laser intensities and harmonic orders considered. The origins of the plateau cutoffs are explained in terms of band gaps that can be reached by Kohn-Sham electrons and holes moving through the band structure.

Models of charge pair generation in organic solar cells.

PubMed

Few, Sheridan; Frost, Jarvist M; Nelson, Jenny

2015-01-28

Efficient charge pair generation is observed in many organic photovoltaic (OPV) heterojunctions, despite nominal electron-hole binding energies which greatly exceed the average thermal energy. Empirically, the efficiency of this process appears to be related to the choice of donor and acceptor materials, the resulting sequence of excited state energy levels and the structure of the interface. In order to establish a suitable physical model for the process, a range of different theoretical studies have addressed the nature and energies of the interfacial states, the energetic profile close to the heterojunction and the dynamics of excited state transitions. In this paper, we review recent developments underpinning the theory of charge pair generation and phenomena, focussing on electronic structure calculations, electrostatic models and approaches to excited state dynamics. We discuss the remaining challenges in achieving a predictive approach to charge generation efficiency.

Correlation induced electron-hole asymmetry in quasi- two-dimensional iridates.

PubMed

Pärschke, Ekaterina M; Wohlfeld, Krzysztof; Foyevtsova, Kateryna; van den Brink, Jeroen

2017-09-25

The resemblance of crystallographic and magnetic structures of the quasi-two-dimensional iridates Ba 2 IrO 4 and Sr 2 IrO 4 to La 2 CuO 4 points at an analogy to cuprate high-Tc superconductors, even if spin-orbit coupling is very strong in iridates. Here we examine this analogy for the motion of a charge (hole or electron) added to the antiferromagnetic ground state. We show that correlation effects render the hole and electron case in iridates very different. An added electron forms a spin polaron, similar to the cuprates, but the situation of a removed electron is far more complex. Many-body 5d 4 configurations form which can be singlet and triplet states of total angular momentum that strongly affect the hole motion. This not only has ramifications for the interpretation of (inverse-)photoemission experiments but also demonstrates that correlation physics renders electron- and hole-doped iridates fundamentally different.Some iridate compounds such as Sr 2 IrO 4 have electronic and atomic structures similar to quasi-2D copper oxides, raising the prospect of high temperature superconductivity. Here, the authors show that there is significant electron-hole asymmetry in iridates, contrary to expectations from the cuprates.

Trap-induced charge transfer/transport at energy harvesting assembly

NASA Astrophysics Data System (ADS)

Cho, Seongeun; Paik, Hanjong; Kim, Tae Wan; Park, Byoungnam

2017-02-01

Understanding interfacial electronic properties between electron donors and acceptors in hybrid optoelectronic solar cells is crucial in governing the device parameters associated with energy harvesting. To probe the electronic localized states at an electron donor/acceptor interface comprising a representative hybrid solar cell, we investigated the electrical contact properties between Al-doped zinc oxide (AZO) and poly (3-hexylthiophene) (P3HT) using AZO as the source and drain electrodes, pumping carriers from AZO into P3HT. The injection efficiency was evaluated using the transmission line method (TLM) in combination with field effect transistor characterizations. Highly conductive AZO films worked as the source and drain electrodes in the devices for TLM and field effect measurements. A comparable contact resistance difference between AZO/P3HT/AZO and Au/P3HT/Au structures contradicts the fact that a far larger energy barrier exists for electrons and holes between AZO and P3HT compared with between P3HT and Au based on the Schottky-Mott model. It is suggested that band to band tunneling accounts for the contradiction through the initial hop from AZO to P3HT for hole injection. The involvement of the tunneling mechanism in determining the contact resistance implies that there is a high density of electronic traps in the organic side.

Novel fiber-based technique for inspection of holes in narrow-bore tubes

NASA Astrophysics Data System (ADS)

Bernard, Fabien; Flaherty, Tony; O'Connor, Gerard M.

2009-06-01

Optical tools offer a route to increasing throughput and efficiency in industrial inspection operations, one of the most time-consuming and labour-intensive aspects of modern manufacturing. One prominent example in the medical device industry is inspection of drilled holes, particularly in narrow-bore tubes (precision-flow devices, such as catheters for drug delivery, radio-opaque contrast agents, etc). The products in which these holes feature are increasing in complexity (reduced dimensions, increasing number of drilled features- in some products now reaching into the hundreds). These trends present a number of technical challenges, not least to ensure that holes are completed and that no damage to the part occurs as a result of over-drilling, for example. This paper will present a novel sensor based on back-side illumination of the drilled hole using side-glowing optical fibers to detect, qualify and quantify drilled holes. The concept is based on inserting a laser-coupled side-glowing optical fiber into the lumen of the tube to be drilled, and imaging the light emitted from this fiber through a drilled hole using a vision system mounted external to the tube. The light from the fiber allows rapid determination of hole completion, shape and size, as well as quantity in the case of products with multiple holes. If the fiber is mounted in the tube prior to drilling, the light emitted from the fiber can be used as a real-time hole breakthrough sensor, preventing under or overdrilling of the tube.

Hot Charge Carrier Transmission from Plasmonic Nanostructures

NASA Astrophysics Data System (ADS)

Christopher, Phillip; Moskovits, Martin

2017-05-01

Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes—processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases.

Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

NASA Astrophysics Data System (ADS)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-09-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

Nonradial and nonpolytropic astrophysical outflows. X. Relativistic MHD rotating spine jets in Kerr metric

NASA Astrophysics Data System (ADS)

Chantry, L.; Cayatte, V.; Sauty, C.; Vlahakis, N.; Tsinganos, K.

2018-04-01

Context. High-resolution radio imaging of active galactic nuclei (AGN) has revealed that the jets of some sources present superluminal knots and transverse stratification. Recent observational projects, such as ALMA and γ-ray telescopes, such as HESS and HESS2 have provided new observational constraints on the central regions of rotating black holes in AGN, suggesting that there is an inner- or spine-jet surrounded by a disk wind. This relativistic spine-jet is likely to be composed of electron-positron pairs extracting energy from the black hole and will be explored by the future γ-ray telescope CTA. Aims: In this article we present an extension to and generalization of relativistic jets in Kerr metric of the Newtonian meridional self-similar mechanism. We aim at modeling the inner spine-jet of AGN as a relativistic light outflow emerging from a spherical corona surrounding a Kerr black hole and its inner accretion disk. Methods: The model is built by expanding the metric and the forces with colatitude to first order in the magnetic flux function. As a result of the expansion, all colatitudinal variations of the physical quantities are quantified by a unique parameter. Unlike previous models, effects of the light cylinder are not neglected. Results: Solutions with high Lorentz factors are obtained and provide spine-jet models up to the polar axis. As in previous publications, we calculate the magnetic collimation efficiency parameter, which measures the variation of the available energy across the field lines. This collimation efficiency is an integral part of the model, generalizing the classical magnetic rotator efficiency criterion to Kerr metric. We study the variation of the magnetic efficiency and acceleration with the spin of the black hole and show their high sensitivity to this integral. Conclusions: These new solutions model collimated or radial, relativistic or ultra-relativistic outflows in AGN or γ-ray bursts. In particular, we discuss the relevance of our solutions to modeling the M 87 spine-jet. We study the efficiency of the central black hole spin to collimate a spine-jet and show that the jet power is of the same order as that determined by numerical simulations.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michael E. McIlwain; Nick Thompson; Da Gao

Considerable interest is given to the excellent scintillation properties of cerium doped lanthanum chloride (LaCl3) and lanthanum bromide (LaBr3). The scintillation efficiencies are much greater than other materials, even those containing cerium. This high efficiency is attributed to the high mobility of electrons and holes, unique placement of the cerium 5d states within the band gap, and energy of the band gap. To better understand the scintillation process and better define the nature of the Self Trapped Exciton (STE) within these unique scintillation materials, density functional theory (DFT), and Ab-inito (HF-MP2) calculations are reported. DFT calculations have yielded a qualitativemore » description of the orbital composition and energy distribution of the band structure in the crystalline material. MP2 and single configuration interaction calculations have provided quantitative values for the band gap and provided energies for the possible range of excited states created following hole and electron creation. Based on this theoretical treatment, one possible description of the STE is the combination of Vk center (Br2-1) and LaBr+1 species that recombine to form a distorted geometry LaBr3* (triplet state). Depending on the distance between the LaBr and Br2, the STE emission band can be reproduced.« less

Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes.

PubMed

Wang, Ting; Zhu, Bingyan; Wang, Shuangpeng; Yuan, Qilin; Zhang, Han; Kang, Zhihui; Wang, Rong; Zhang, Hanzhuang; Ji, Wenyu

2018-05-02

The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting diodes (QLEDs) is explored by employing a series of green quantum dots (QDs) (Zn x Cd 1- x Se/ZnS core/shell QDs with different ZnS shell thicknesses) as the emitters. ZnO nanoparticles and sol-gel NiO are employed as the electron and hole transport materials, respectively. Time-resolved and steady-state photoluminescence results indicate that positive charging processes might occur for the QDs deposited on NiO, which results in emission quenching of QDs and poor device performance. The thick shell outside the core in QDs not only largely suppresses the QD emission quenching but also effectively preserves the excitons in QDs from dissociation of electron-hole pairs when they are subjected to an electric field. The peak efficiency of 4.2 cd/A and maximum luminance of 4205 cd/m 2 are achieved for the device based on QDs with the thickest shells (∼4.2 nm). We anticipate that these results will spur progress toward the design and realization of efficient all-inorganic QLEDs as a platform for the QD-based full-colored displays.

Tris(2-(1H-pyrazol-1-yl)pyridine)cobalt(III) as p-type dopant for organic semiconductors and its application in highly efficient solid-state dye-sensitized solar cells.

PubMed

Burschka, Julian; Dualeh, Amalie; Kessler, Florian; Baranoff, Etienne; Cevey-Ha, Ngoc-Lê; Yi, Chenyi; Nazeeruddin, Mohammad K; Grätzel, Michael

2011-11-16

Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm(-2)). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular.

Chiral Majorana interference as a source of quantum entanglement

NASA Astrophysics Data System (ADS)

Chirolli, Luca; Baltanás, José Pablo; Frustaglia, Diego

2018-04-01

Two-particle Hanbury Brown-Twiss interferometry with chiral Majorana modes produces maximally entangled electron-hole pairs. We promote the electron-hole quantum number to an interferometric degree of freedom and complete the set of linear tools for single- and two-particle interferometry by introducing a key phase gate that, combined with a Mach-Zehnder, allows full electron-hole rotations. By considering entanglement witnesses built on current cross-correlation measurements, we find that the possibility of independent local-channel rotations in the electron-hole subspace leads to a significant boost of the entanglement detection power.

Quantum states and optical responses of low-dimensional electron hole systems

NASA Astrophysics Data System (ADS)

Ogawa, Tetsuo

2004-09-01

Quantum states and their optical responses of low-dimensional electron-hole systems in photoexcited semiconductors and/or metals are reviewed from a theoretical viewpoint, stressing the electron-hole Coulomb interaction, the excitonic effects, the Fermi-surface effects and the dimensionality. Recent progress of theoretical studies is stressed and important problems to be solved are introduced. We cover not only single-exciton problems but also few-exciton and many-exciton problems, including electron-hole plasma situations. Dimensionality of the Wannier exciton is clarified in terms of its linear and nonlinear responses. We also discuss a biexciton system, exciton bosonization technique, high-density degenerate electron-hole systems, gas-liquid phase separation in an excited state and the Fermi-edge singularity due to a Mahan exciton in a low-dimensional metal.

Calibrating an optical scanner for quality assurance of large area radiation detectors

NASA Astrophysics Data System (ADS)

Karadzhinova, A.; Hildén, T.; Berdova, M.; Lauhakangas, R.; Heino, J.; Tuominen, E.; Franssila, S.; Hæggström, E.; Kassamakov, I.

2014-11-01

A gas electron multiplier (GEM) is a particle detector used in high-energy physics. Its main component is a thin copper-polymer-copper sandwich that carries Ø =70  ±  5 µm holes. Quality assurance (QA) is needed to guarantee both long operating life and reading fidelity of the GEM. Absence of layer defects and conformity of the holes to specifications is important. Both hole size and shape influence the detector’s gas multiplication factor and hence affect the collected data. For the scanner the required lateral measurement tolerance is ± 5 µm. We calibrated a high aspect ratio optical scanning system (OSS) to allow ensuring the quality of large GEM foils. For the calibration we microfabricated transfer standards, which were imaged with the OSS and which were compared to corresponding scanning electron microscopy (SEM) images. The calibration fulfilled the ISO/IEC 17025 and UKAS M3003 requirements: the calibration factor was 1.01  ±  0.01, determined at 95% confidence level across a 950  ×  950 mm2 area. The proposed large-scale scanning technique can potentially be valuable in other microfabricated products too.

GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency

NASA Astrophysics Data System (ADS)

Kim, Garam; Sun, Min-Chul; Kim, Jang Hyun; Park, Euyhwan; Park, Byung-Gook

2017-01-01

In order to improve the internal quantum efficiency of GaN-based LEDs, a LED structure featuring a p-type trench in the multi-quantum well (MQW) is proposed. This structure has effects on spreading holes into the MQW and reducing the quantum-confined stark effect (QCSE). In addition, two simple fabrication methods using electron-beam (e-beam) lithography or selective wet etching for manufacturing the p-type structure are also proposed. From the measurement results of the manufactured GaN-based LEDs, it is confirmed that the proposed structure using e-beam lithography or selective wet etching shows improved light output power compared to the conventional structure because of more uniform hole distribution. It is also confirmed that the proposed structure formed by e-beam lithography has a significant effect on strain relaxation and reduction in the QCSE from the electro-luminescence measurement.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Engineering titania nanostructure to tune and improve its photocatalytic activity

PubMed Central

Cargnello, Matteo; Montini, Tiziano; Smolin, Sergey Y.; Priebe, Jacqueline B.; Delgado Jaén, Juan J.; Doan-Nguyen, Vicky V. T.; McKay, Ian S.; Schwalbe, Jay A.; Pohl, Marga-Martina; Gordon, Thomas R.; Lu, Yupeng; Baxter, Jason B.; Brückner, Angelika; Murray, Christopher B.

2016-01-01

Photocatalytic pathways could prove crucial to the sustainable production of fuels and chemicals required for a carbon-neutral society. Electron−hole recombination is a critical problem that has, so far, limited the efficiency of the most promising photocatalytic materials. Here, we show the efficacy of anisotropy in improving charge separation and thereby boosting the activity of a titania (TiO2) photocatalytic system. Specifically, we show that H2 production in uniform, one-dimensional brookite titania nanorods is highly enhanced by engineering their length. By using complimentary characterization techniques to separately probe excited electrons and holes, we link the high observed reaction rates to the anisotropic structure, which favors efficient carrier utilization. Quantum yield values for hydrogen production from ethanol, glycerol, and glucose as high as 65%, 35%, and 6%, respectively, demonstrate the promise and generality of this approach for improving the photoactivity of semiconducting nanostructures for a wide range of reacting systems. PMID:27035977

Electron Dynamics in the Core-Excited CS2 Molecule Revealed through Resonant Inelastic X-Ray Scattering Spectroscopy

NASA Astrophysics Data System (ADS)

Marchenko, T.; Carniato, S.; Journel, L.; Guillemin, R.; Kawerk, E.; Žitnik, M.; Kavčič, M.; Bučar, K.; Bohinc, R.; Petric, M.; Vaz da Cruz, V.; Gel'mukhanov, F.; Simon, M.

2015-07-01

We present an experimental and theoretical study of resonant inelastic x-ray scattering (RIXS) in the carbon disulphide CS2 molecule near the sulfur K-absorption edge. We observe a strong evolution of the RIXS spectral profile with the excitation energy tuned below the lowest unoccupied molecular orbital (LUMO) absorption resonance. The reason for this is twofold. Reducing the photon energy in the vicinity of the LUMO absorption resonance leads to a relative suppression of the LUMO contribution with respect to the emission signal from the higher unoccupied molecular orbitals, which results in the modulation of the total RIXS profile. At even larger negative photon-energy detuning from the resonance, the excitation-energy dependence of the RIXS profile is dominated by the onset of electron dynamics triggered by a coherent excitation of multiple electronic states. Furthermore, our study demonstrates that in the hard x-ray regime, localization of the S 1s core hole occurs in CS2 during the RIXS process because of the orientational dephasing of interference between the waves scattering on the two sulfur atoms. Core-hole localization leads to violation of the symmetry selection rules for the electron transitions observed in the spectra.

Photo-reduction of bromate in drinking water by metallic Ag and reduced graphene oxide (RGO) jointly modified BiVO4 under visible light irradiation.

PubMed

Chen, Fei; Yang, Qi; Zhong, Yu; An, Hongxue; Zhao, Jianwei; Xie, Ting; Xu, Qiuxiang; Li, Xiaoming; Wang, Dongbo; Zeng, Guangming

2016-09-15

Bromate (BrO3(-)), an oxyhalide disinfection by-product (DBP) in drinking water, has been demonstrated to be carcinogenic and genotoxic. In the current work, metallic Ag and reduced graphene oxide (RGO) co-modified BiVO4 was successfully synthesized by a stepwise chemical method coupling with a photo-deposition process and applied in the photo-reduction of BrO3(-) under visible light irradiation. In this composite, metallic Ag acted as an electron donor or mediator and RGO enhanced the BrO3(-) adsorption onto the surface of catalysts as well as an electron acceptor to restrict the recombination of photo-generated electron-hole pairs. The Ag@BiVO4@RGO composite exhibited greater photo-reduction BrO3(-) performance than pure BiVO4, Ag@BiVO4 and RGO@BiVO4 under identical experimental conditions: initial BrO3(-) concentration 150 μg/L, catalyst dosage 0.5 g/L, pH 7.0 and visible light (λ > 420 nm). The photoluminescence spectra (PL), electron-spin resonance (ESR), photocurrent density (PC) and electrochemical impedance spectroscopy (EIS) measurements indicated that the modified BiVO4 enhanced the photo-generated electrons and separated the electron-hole pairs. The photocatalytic reduction efficiency for BrO3(-) removal decreased with the addition of electron quencher K2S2O8, suggesting that electrons were the primary factor in this photo-reduction process. The declining photo-reduction efficiency of BrO3(-) in tap water should attribute to the consumption of photo-generated electrons by coexisting anions and the adsorption of dissolved organic matter (DOM) on graphene surface. The overall results indicate a promising application potential for photo-reduction in the DBPs removal from drinking water. Copyright © 2016 Elsevier Ltd. All rights reserved.

Three superconducting phases with different categories of pairing in hole- and electron-doped LaFeAs1 -xPxO

NASA Astrophysics Data System (ADS)

Miyasaka, S.; Uekubo, M.; Tsuji, H.; Nakajima, M.; Tajima, S.; Shiota, T.; Mukuda, H.; Sagayama, H.; Nakao, H.; Kumai, R.; Murakami, Y.

2017-06-01

The phase diagram of the LaFeAs1 -xPxO system has been extensively studied through hole and electron doping as well as As/P substitution. It has been revealed that there are three different superconducting phases with different Fermi surface (FS) topologies and thus with possibly different pairing glues. One of them is well understood as spin fluctuation-mediated superconductivity within a FS nesting scenario. Another one with the FSs in a bad nesting condition must be explained in a different context such as orbital or spin fluctuation in a strongly correlated electronic system. In both phases, T -linear resistivity was commonly observed when the superconducting transition temperature Tc becomes the highest value, indicating that the strength of bosonic fluctuation determines Tc. In the last superconducting phase, the nesting condition of FSs and the related bosonic fluctuation are moderate. Variety of phase diagram characterizes the multiple orbital nature of the iron-based superconductors which are just near the boundary between weak and strong correlation regimes.

A dynamic Monte Carlo study of anomalous current voltage behaviour in organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feron, K., E-mail: Krishna.Feron@csiro.au; Fell, C. J.; CSIRO Energy Flagship, Newcastle, NSW 2300

2014-12-07

We present a dynamic Monte Carlo (DMC) study of s-shaped current-voltage (I-V) behaviour in organic solar cells. This anomalous behaviour causes a substantial decrease in fill factor and thus power conversion efficiency. We show that this s-shaped behaviour is induced by charge traps that are located at the electrode interface rather than in the bulk of the active layer, and that the anomaly becomes more pronounced with increasing trap depth or density. Furthermore, the s-shape anomaly is correlated with interface recombination, but not bulk recombination, thus highlighting the importance of controlling the electrode interface. While thermal annealing is known tomore » remove the s-shape anomaly, the reason has been not clear, since these treatments induce multiple simultaneous changes to the organic solar cell structure. The DMC modelling indicates that it is the removal of aluminium clusters at the electrode, which act as charge traps, that removes the anomalous I-V behaviour. Finally, this work shows that the s-shape becomes less pronounced with increasing electron-hole recombination rate; suggesting that efficient organic photovoltaic material systems are more susceptible to these electrode interface effects.« less

Suppressing longitudinal double-layer oscillations by using elliptically polarized laser pulses in the hole-boring radiation pressure acceleration regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu Dong; Yan, X. Q.; Key Laboratory of High Energy Density Physics Simulation, Ministry of Education, Peking University, Beijing 100871

It is shown that well collimated mono-energetic ion beams with a large particle number can be generated in the hole-boring radiation pressure acceleration regime by using an elliptically polarized laser pulse with appropriate theoretically determined laser polarization ratio. Due to the J Multiplication-Sign B effect, the double-layer charge separation region is imbued with hot electrons that prevent ion pileup, thus suppressing the double-layer oscillations. The proposed mechanism is well confirmed by Particle-in-Cell simulations, and after suppressing the longitudinal double-layer oscillations, the ion beams driven by the elliptically polarized lasers own much better energy spectrum than those by circularly polarized lasers.

Hydrothermal synthesis of CdS nanorods anchored on α-Fe2O3 nanotube arrays with enhanced visible-light-driven photocatalytic properties.

PubMed

Lei, Rui; Ni, Hongwei; Chen, Rongsheng; Gu, Huazhi; Zhang, Bowei; Zhan, Weiting

2018-03-15

As an n-type semiconductor with an excellent physicochemical properties, iron oxide (Fe 2 O 3 ) has been extensively used in the fields of environmental pollution control and solar energy conversion. However, the high recombination rate of the photoinduced electron-hole pairs and poor charge mobility for Fe 2 O 3 nanomaterial generally result in low photocatalytic efficiency. Herein, an uniform CdS nanorods grown directly on one-dimensional α-Fe 2 O 3 nanotube arrays (NTAs) are successfully synthesized by a facile hydrothermal method and the constructed heterojunction can be a kind of efficient and recyclable photocatalysts. Successful deposition of CdS nanorods onto the α-Fe 2 O 3 NTAs is verified by field emission scanning electron microscopy(FESEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDS). UV-Vis diffuse reflectance spectroscopy indicates that α-Fe 2 O 3 /CdS NTAs possess the intense visible light absorption and also display a red-shift of the band-edge compared with the pure α-Fe 2 O 3 NTAs. The as-obtained α-Fe 2 O 3 /CdS NTAs display excellent photocatalytic activity for decomposition of methylene blue (MB), methyl orange (MO), and phenol under visible light illumination. Among all the tested photocatalysts, the film synthesized for 3h with good stability exhibits the best photocatalytic properties and produces the highest photocurrent of 1.43 mA/cm 2 at 0.8 V vs. Ag/AgCl electrode, owing to its well formed heterojunction structure, effective electron-hole pair separation and direct electron transfer pathway along the CdS nanorods and α-Fe 2 O 3 NTAs. Besides, the photogenerated holes (h + ) and superoxide radicals (O 2 - ) play dominant roles in the photocatalytic process. On the basis of the photocatalytic results and energy band diagram, the photocatalytic process mechanism is proposed. Considering the easy preparation and excellent performance, α-Fe 2 O 3 /CdS NTAs could be a promising and competitive visible-light-driven photocatalyst in the field of environment remediation. Copyright © 2017 Elsevier Inc. All rights reserved.