Sample records for electrical contact material

  1. Improved Electrical Contact For Dowhhole Drilling Networks

    DOEpatents

    Hall, David R.; Hall, Jr., H. Tracy; Pixton, David S.; Dahlgren, Scott; Fox, Joe; Sneddon, Cameron

    2005-08-16

    An electrical contact system for transmitting information across tool joints while minimizing signal reflections that occur at the tool joints includes a first electrical contact comprising an annular resilient material. An annular conductor is embedded within the annular resilient material and has a surface exposed from the annular resilient material. A second electrical contact is provided that is substantially equal to the first electrical contact. Likewise, the second electrical contact has an annular resilient material and an annular conductor. The two electrical contacts configured to contact one another such that the annular conductors of each come into physical contact. The annular resilient materials of each electrical contact each have dielectric characteristics and dimensions that are adjusted to provide desired impedance to the electrical contacts.

  2. Semiconductor bridge (SCB) igniter

    DOEpatents

    Bickes, Jr., Robert W.; Schwarz, Alfred C.

    1987-01-01

    In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

  3. Coaxial test fixture

    DOEpatents

    Praeg, W.F.

    1984-03-30

    This invention pertains to arrangements for performing electrical tests on contact material samples, and in particular for testing contact material test samples in an evacuated environment under high current loads. Frequently, it is desirable in developing high-current separable contact material, to have at least a preliminary analysis of selected candidate conductor materials. Testing of material samples will hopefully identify materials unsuitable for high current electrical contact without requiring incorporation of the materials into a completed and oftentimes complex structure.

  4. Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

    NASA Astrophysics Data System (ADS)

    Luo, Xiangcheng

    Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic/plastic deformation, oxidation, strain hardening, passive layer damage, fracture, etc.) with the electrical contact resistance, which was measured in real time for contacts under dynamic compression, thus allowing both reversible and irreversible changes to be observed. The materials studied included metals (carbon steel, stainless steel, aluminum and copper), carbon fiber reinforced polymer-matrix composite (nylon-6), ceramic (mortar) and graphite, due to their relevance to fastening, concrete structures, electric brushes and electrical pressure contacts.

  5. Non- contacting capacitive diagnostic device

    DOEpatents

    Ellison, Timothy

    2005-07-12

    A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

  6. Low resistance thin film organic solar cell electrodes

    DOEpatents

    Forrest, Stephen [Princeton, NJ; Xue, Jiangeng [Piscataway, NJ

    2008-01-01

    A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.

  7. Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

    NASA Astrophysics Data System (ADS)

    He, Yuping; Léonard, François; Spataru, Catalin D.

    2018-06-01

    Half-Heusler (HH) alloys have shown promising thermoelectric properties in the medium- and high-temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p -type materials generally form ohmic contacts while the n -type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low- to medium-temperature range and provide quantitative values that set lower limits for these systems.

  8. Triboelectric nanogenerator for powering portable electronics

    DOEpatents

    Wang, Zhong Lin; Wang, Sihong; Lin, Long; Zhu, Guang; Lin, Zong-Hong

    2017-03-14

    A triboelectric generator includes a first contact charging member and a second contact charging member. The first contact charging member includes a first contact layer and a conductive electrode layer. The first contact layer includes a material that has a triboelectric series rating indicating a propensity to gain electrons due to a contacting event. The conductive electrode layer is disposed along the back side of the contact layer. The second contact charging member is spaced apart from and disposed oppositely from the first contact charging member. It includes an electrically conductive material layer that has a triboelectric series rating indicating a propensity to lose electrons when contacted by the first contact layer during the contacting event. The electrically conductive material acts as an electrode. A mechanism maintains a space between the first contact charging member and the second contact charging member except when a force is applied thereto.

  9. Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cousineau, Emily; Bennion, Kevin; Devoto, Douglas

    Thermal management for electric motors is important as the automotive industry continues to transition to more electrically dominant vehicle propulsion systems. The transition to more electrically dominant propulsion systems leads to higher-power duty cycles for electric-drive systems. Thermal constraints place significant limitations on how electric motors ultimately perform. As thermal management improves, there will be a direct trade-off among motor performance, efficiency, cost, and the sizing of electric motors to operate within the thermal constraints. During the development of thermal finite element analysis models and computational fluid dynamics models for electric motors, it was found that there was a lackmore » of open literature detailing the thermal properties of key materials common in electric motors that are significant in terms of heat removal. The lack of available literature, coupled with the strong interest from industry in the passive-stack thermal measurement results, led to experiments to characterize the thermal contact resistance between motor laminations. We examined four lamination materials, including the commonly used 26 gauge and 29 gauge M19 materials, the HF10 and Arnon 7 materials. These latter two materials are thinner and reduce eddy currents responsible for core losses. We measured the thermal conductivity of the lamination materials and the thermal contact resistance between laminations in a stack, as well as investigated factors affecting contact resistance between laminations such as the contact pressure and surface finish. Lamination property data will be provided and we also develop a model to estimate the through-stack thermal conductivity for materials beyond those that were directly tested in this work. For example, at a clamping pressure of 138 kPa, the 29 gauge M19 material has a through-stack thermal conductivity of 1.68 W/m-K, and the contact resistance between laminations was measured to be 193 mm^2-K/W. The measured bulk thermal conductivity for the M19 29 gauge material is 21.0 W/m-K. Density and specific heat were measured to be 7450 kg/m^3 and 463 J/kg-K, respectively. These results are helping, and will continue to help engineers and researchers in the design and development of motors.« less

  10. Charge gradient microscopy

    DOEpatents

    Roelofs, Andreas; Hong, Seungbum

    2018-02-06

    A method for rapid imaging of a material specimen includes positioning a tip to contact the material specimen, and applying a force to a surface of the material specimen via the tip. In addition, the method includes moving the tip across the surface of the material specimen while removing electrical charge therefrom, generating a signal produced by contact between the tip and the surface, and detecting, based on the data, the removed electrical charge induced through the tip during movement of the tip across the surface. The method further includes measuring the detected electrical charge.

  11. Conformally encapsulated multi-electrode arrays with seamless insulation

    DOEpatents

    Tabada, Phillipe J.; Shah, Kedar G.; Tolosa, Vanessa; Pannu, Satinderall S.; Tooker, Angela; Delima, Terri; Sheth, Heeral; Felix, Sarah

    2016-11-22

    Thin-film multi-electrode arrays (MEA) having one or more electrically conductive beams conformally encapsulated in a seamless block of electrically insulating material, and methods of fabricating such MEAs using reproducible, microfabrication processes. One or more electrically conductive traces are formed on scaffold material that is subsequently removed to suspend the traces over a substrate by support portions of the trace beam in contact with the substrate. By encapsulating the suspended traces, either individually or together, with a single continuous layer of an electrically insulating material, a seamless block of electrically insulating material is formed that conforms to the shape of the trace beam structure, including any trace backings which provide suspension support. Electrical contacts, electrodes, or leads of the traces are exposed from the encapsulated trace beam structure by removing the substrate.

  12. Changes in the structure of the surface layer of metal materials upon friction and electric current loading

    NASA Astrophysics Data System (ADS)

    Fadin, V. V.

    2013-09-01

    Dependences of the electric conductivity of a contact and wear intensity of metal materials on the electric current density in sliding friction are obtained. It is established that alloying of the material basis leads to faster damage of the friction surface. The presence of about 40 аt.% oxygen in the surface layer is detected by the Auger spectrometry method. It is demonstrated by the x-ray diffraction method that FeO formed in the surface layer leads to an increase in the electric conductivity of the contact.

  13. Electrical safety device

    DOEpatents

    White, David B.

    1991-01-01

    An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

  14. Effect of Yttrium on the Microstructure and Properties of Pt-Ir Electrical Contact Materials

    NASA Astrophysics Data System (ADS)

    Wang, Saibei; Sun, Yong; Wang, Song; Peng, Mingjun; Liu, Manmen; Duan, Yonghua; Chen, Yongtai; Yang, Youcai; Chen, Song; Li, Aikun; Xie, Ming

    2017-10-01

    The Pt-10Ir and Pt-10Ir-1Y were prepared by high frequency induction melting, then the samples were obtained by powder metallurgy, hot extrusion and drawing. The influence of Y addition on microstructure and electrical contact properties of Pt-10Ir alloy has been investigated by using optical microscopy, SEM, electronic balance and the contact material test system. The results show that the addition of Y leads to the micro-structural refinement and directional change of material transfer, but has almost no influence on erosion morphology.

  15. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  16. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  17. Changes of electrical conductivity of the metal surface layer by the laser alloying with foreign elements

    NASA Astrophysics Data System (ADS)

    Kostrubiec, Franciszek; Pawlak, Ryszard; Raczynski, Tomasz; Walczak, Maria

    1994-09-01

    Laser treatment of the surface of materials is of major importance for many fields technology. One of the latest and most significant methods of this treatment is laser alloying consisting of introducing foreign atoms into the metal surface layer during the reaction of laser radiation with the surface. This opens up vast possibilities for the modification of properties of such a layer (obtaining layers of increased microhardness, increased resistance to electroerosion in an electric arc, etc.). Conductivity of the material is a very important parameter in case of conductive materials used for electrical contacts. The paper presents the results of studies on change in electrical conductivity of the surface layer of metals alloyed with a laser. A comparative analysis of conductivity of base metal surface layers prior to and following laser treatment has been performed. Depending on the base metal and the alloying element, optical treatment parameters allowing a required change in the surface layer conductivity have been selected. A very important property of the contact material is its resistance to plastic strain. It affects the real value of contact surface coming into contact and, along with the material conductivity, determines contact resistance and the amount of heat generated in place of contact. These quantities are directly related to the initiation and the course of an arc discharge, hence they also affect resistance to electroerosion. The parameter that reflects plastic properties with loads concentrated on a small surface, as is the case with a reciprocal contact force of two real surfaces with their irregularities being in contact, is microhardness. In the paper, the results of investigations into microhardness of modified surface layers compared with base metal microhardness have been presented.

  18. Electrochemical Device Comprising an Electrically-Conductive, Selectively-Permeable Membrane

    NASA Technical Reports Server (NTRS)

    Laicer, Castro S. T. (Inventor); Mittelsteadt, Cortney K. (Inventor); Harrison, Katherine E. (Inventor); McPheeters, Bryn M. (Inventor)

    2017-01-01

    An electrochemical device, such as a fuel cell or an electrolyzer. In one embodiment, the electrochemical device includes a membrane electrode assembly (MEA), an anodic gas diffusion medium in contact with the anode of the MEA, a cathodic gas diffusion medium in contact with the cathode, a first bipolar plate in contact with the anodic gas diffusion medium, and a second bipolar plate in contact with the cathodic gas diffusion medium. Each of the bipolar plates includes an electrically-conductive, non-porous, liquid-permeable, substantially gas-impermeable membrane in contact with its respective gas diffusion medium, the membrane including a solid polymer electrolyte and a non-particulate, electrically-conductive material, such as carbon nanotubes, carbon nanofibers, and/or metal nanowires. In addition, each bipolar plate also includes an electrically-conductive fluid chamber in contact with the electrically-conductive, selectively-permeable membrane and further includes a non-porous and electrically-conductive plate in contact with the fluid chamber.

  19. Electrical contact arrangement for a coating process

    DOEpatents

    Kabagambe, Benjamin; McCamy, James W; Boyd, Donald W

    2013-09-17

    A protective coating is applied to the electrically conductive surface of a reflective coating of a solar mirror by biasing a conductive member having a layer of a malleable electrically conductive material, e.g. a paste, against a portion of the conductive surface while moving an electrodepositable coating composition over the conductive surface. The moving of the electrodepositable coating composition over the conductive surface includes moving the solar mirror through a flow curtain of the electrodepositable coating composition and submerging the solar mirror in a pool of the electrodepositable coating composition. The use of the layer of a malleable electrically conductive material between the conductive member and the conductive surface compensates for irregularities in the conductive surface being contacted during the coating process thereby reducing the current density at the electrical contact area.

  20. Nanodevices for spintronics and methods of using same

    DOEpatents

    Zaliznyak, Igor; Tsvelik, Alexei; Kharzeev, Dmitri

    2013-02-19

    Graphene magnet multilayers (GMMs) are employed to facilitate development of spintronic devices. The GMMs can include a sheet of monolayer (ML) or few-layer (FL) graphene in contact with a magnetic material, such as a ferromagnetic (FM) or an antiferromagnetic material. Electrode terminals can be disposed on the GMMs to be in electrical contact with the graphene. A magnetic field effect is induced in the graphene sheet based on an exchange magnetic field resulting from a magnetization of the magnetic material which is in contact with graphene. Electrical characteristics of the graphene can be manipulated based on the magnetization of the magnetic material in the GMM.

  1. Electrode material comprising graphene-composite materials in a graphite network

    DOEpatents

    Kung, Harold H.; Lee, Jung K.

    2014-07-15

    A durable electrode material suitable for use in Li ion batteries is provided. The material is comprised of a continuous network of graphite regions integrated with, and in good electrical contact with a composite comprising graphene sheets and an electrically active material, such as silicon, wherein the electrically active material is dispersed between, and supported by, the graphene sheets.

  2. Electrode material comprising graphene-composite materials in a graphite network

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kung, Harold H.; Lee, Jung K.

    A durable electrode material suitable for use in Li ion batteries is provided. The material is comprised of a continuous network of graphite regions integrated with, and in good electrical contact with a composite comprising graphene sheets and an electrically active material, such as silicon, wherein the electrically active material is dispersed between, and supported by, the graphene sheets.

  3. Integrated electrical connector

    DOEpatents

    Benett, William J.; Ackler, Harold D.

    2005-05-24

    An electrical connector is formed from a sheet of electrically conductive material that lies in between the two layers of nonconducting material that comprise the casing of an electrical chip. The connector is electrically connected to an electrical element embedded within the chip. An opening in the sheet is concentrically aligned with a pair of larger holes respectively bored through the nonconducting layers. The opening is also smaller than the diameter of an electrically conductive contact pin. However, the sheet is composed flexible material so that the opening adapts to the diameter of the pin when the pin is inserted therethrough. The periphery of the opening applies force to the sides of the pin when the pin is inserted, and thus holds the pin within the opening and in contact with the sheet, by friction. The pin can be withdrawn from the connector by applying sufficient axial force.

  4. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  5. Electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  6. The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

    NASA Astrophysics Data System (ADS)

    Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

    2010-01-01

    Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

  7. Single electrode triboelectric generator

    DOEpatents

    Wang, Zhong Lin; Yang, Ya; Zhang, Hulin; Zhu, Guang

    2017-11-07

    A triboelectric generator includes a first contact charging member, a second contact charging member and an electrical load. The first contact charging member has a contact side and an opposite back side. The first contact charging member includes a material that has a first rating on a triboelectric series and also has a conductive aspect. The second contact charging member has a second rating on the triboelectric series, different from the first rating, and is configured to come into contact with the first contact layer and go out of contact with the first contact layer. The electrical load electrically is coupled to the first contact charging member and to a common voltage so that current will flow through the load after the second contact charging member comes into contact with the first contact charging member and then goes out of contact with the first contact charging member.

  8. Electrical contacts between cathodes and metallic interconnects in solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenguo; Xia, Guanguang; Singh, Prabhakar; Stevenson, Jeffry W.

    In this work, simulated cathode/interconnect structures were used to investigate the effects of different contact materials on the contact resistance between a strontium doped lanthanum ferrite cathode and a Crofer22 APU interconnect. Among the materials studied, Pt, which has a prohibitive cost for the application, demonstrated the best performance as a contact paste. For the relatively cost-effective perovskites, the contact ASR was found to depend on their electrical conductivity, scale growth on the metallic interconnect, and interactions between the contact material and the metallic interconnect or particularly the scale grown on the interconnect. Manganites appeared to promote manganese-containing spinel interlayer formation that helped minimize the increase of contact ASR. Chromium from the interconnects reacted with strontium in the perovskites to form SrCrO 4. An improved performance was achieved by application of a thermally grown (Mn,Co) 3O 4 spinel protection layer on Crofer22 APU that dramatically minimized the contact resistance between the cathodes and interconnects.

  9. The modular approach enables a fully ab initio simulation of the contacts between 3D and 2D materials.

    PubMed

    Fediai, Artem; Ryndyk, Dmitry A; Cuniberti, Gianaurelio

    2016-10-05

    Up to now, the electrical properties of the contacts between 3D metals and 2D materials have never been computed at a fully ab initio level due to the huge number of atomic orbitals involved in a current path from an electrode to a pristine 2D material. As a result, there are still numerous open questions and controversial theories on the electrical properties of systems with 3D/2D interfaces-for example, the current path and the contact length scalability. Our work provides a first-principles solution to this long-standing problem with the use of the modular approach, a method which rigorously combines a Green function formalism with the density functional theory (DFT) for this particular contact type. The modular approach is a general approach valid for any 3D/2D contact. As an example, we apply it to the most investigated among 3D/2D contacts-metal/graphene contacts-and show its abilities and consistency by comparison with existing experimental data. As it is applicable to any 3D/2D interface, the modular approach allows the engineering of 3D/2D contacts with the pre-defined electrical properties.

  10. Microfabricated thermoelectric power-generation devices

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

    2002-01-01

    A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

  11. Microfabricated thermoelectric power-generation devices

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

    2004-01-01

    A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

  12. Fuel cell electrode interconnect contact material encapsulation and method

    DOEpatents

    Derose, Anthony J.; Haltiner, Jr., Karl J.; Gudyka, Russell A.; Bonadies, Joseph V.; Silvis, Thomas W.

    2016-05-31

    A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

  13. Perforation patterned electrical interconnects

    DOEpatents

    Frey, Jonathan

    2014-01-28

    This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

  14. Electrically tunable infrared metamaterial devices

    DOEpatents

    Brener, Igal; Jun, Young Chul

    2015-07-21

    A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

  15. Fabricating and using a micromachined magnetostatic relay or switch

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Wright, John A. (Inventor)

    2001-01-01

    A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

  16. Electrochromic device using mercaptans and organothiolate compounds

    DOEpatents

    Lampert, Carl M.; Ma, Yan-ping; Doeff, Marca M.; Visco, Steven

    1995-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer and a composite ion counter electrode for transporting ions. The counter electrode further comprises a polymer electrolyte material and an organosulfur material in which, in its discharged state, the organosulfur material is further comprised of a mercaptan or an organothiolate. In one preferred embodiment, both the electrochromic electrode and the counter electrode are transparent either to visible light or to the entire electromagnetic spectrum in both charged and discharged states. An electrochromic device is disclosed which comprises one or more electrochromic electrodes encased in glass or plastic plates on the inner surface of each of which is formed a transparent electrically conductive film. Electrical contacts, which are in electrical contact with the conductive films, facilitate external electrical connection.

  17. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

    1999-01-01

    A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

  18. Laminated photovoltaic modules using back-contact solar cells

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-09-14

    Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  19. Electrochromic device using mercaptans and organothiolate compounds

    DOEpatents

    Lampert, C.M.; Ma, Y.P.; Doeff, M.M.; Visco, S.

    1995-08-15

    An electrochromic cell is disclosed which comprises an electrochromic layer and a composite ion counter electrode for transporting ions. The counter electrode further comprises a polymer electrolyte material and an organosulfur material in which, in its discharged state, the organosulfur material is further comprised of a mercaptan or an organothiolate. In one preferred embodiment, both the electrochromic electrode and the counter electrode are transparent either to visible light or to the entire electromagnetic spectrum in both charged and discharged states. An electrochromic device is disclosed which comprises one or more electrochromic electrodes encased in glass or plastic plates on the inner surface of each of which is formed a transparent electrically conductive film. Electrical contacts, which are in electrical contact with the conductive films, facilitate external electrical connection. 5 figs.

  20. Organic magnetic field sensor

    DOEpatents

    McCamey, Dane; Boehme, Christoph

    2017-01-24

    An organic, spin-dependent magnetic field sensor (10) includes an active stack (12) having an organic material with a spin-dependence. The sensor (10) also includes a back electrical contact (14) electrically coupled to a back of the active stack (12) and a front electrical contact (16) electrically coupled to a front of the active stack (12). A magnetic field generator (18) is oriented so as to provide an oscillating magnetic field which penetrates the active stack (12).

  1. Contact material optimization and contact physics in metal-contact microelectromechanical systems (MEMS) switches

    NASA Astrophysics Data System (ADS)

    Yang, Zhenyin

    Metal-contact MEMS switches hold great promise for implementing agile radio frequency (RF) systems because of their small size, low fabrication cost, low power consumption, wide operational band, excellent isolation and exceptionally low signal insertion loss. Gold is often utilized as a contact material for metal-contact MEMS switches due to its excellent electrical conductivity and corrosion resistance. However contact wear and stiction are the two major failure modes for these switches due to its material softness and high surface adhesion energy. To strengthen the contact material, pure gold was alloyed with other metal elements. We designed and constructed a new micro-contacting test facility that closely mimic the typical MEMS operation and utilized this facility to efficiently evaluate optimized contact materials. Au-Ni binary alloy system as the candidate contact material for MEMS switches was systematically investigated. A correlation between contact material properties (etc. microstructure, micro-hardness, electrical resistivity, topology, surface structures and composition) and micro-contacting performance was established. It was demonstrated nano-scale graded two-phase Au-Ni film could possibly yield an improved device performance. Gold micro-contact degradation mechanisms were also systematically investigated by running the MEMS switching tests under a wide range of test conditions. According to our quantitative failure analysis, field evaporation could be the dominant failure mode for highfield (> critical threshold field) hot switching; transient thermal-assisted wear could be the dominant failure mode for low-field hot switching; on the other hand, pure mechanical wear and steady current heating (1 mA) caused much less contact degradation in cold switching tests. Results from low-force (50 muN/micro-contact), low current (0.1 mA) tests on real MEMS switches indicated that continuous adsorbed films from ambient air could degrade the switch contact resistance. Our work also contributes to the field of general nano-science and technology by resolving the transfer directionality of field evaporation of gold in atomic force microscope (AFM)/scanning tunneling microscope (STM).

  2. An experimental method to determine the resistance of a vertically aligned carbon nanotube forest in contact with a conductive layer

    NASA Astrophysics Data System (ADS)

    Vo, T. T.; Poulain, C.; Dijon, J.; Fournier, A.; Chevalier, N.; Mariolle, D.

    2012-08-01

    High density vertically aligned carbon nanotube (VACNT) forests are considered as a promising conductive material for many applications (interconnects in microelectronics or contact material layer in sliding contact applications). It is thus crucial to characterize the electrical resistance of these forests, especially in contact with the inherent top/bottom conductive substrates. This paper aims to develop an original method to determine the contribution of the different terms in this electrical resistance, which is measured with a tipless atomic force microscope used in high accuracy "force mode." VACNT stacks with different heights on AlCu substrate with or without Au/Pd top coating are studied. The electrical contact area between the probe tip and the forest is considered to be equivalent to the classical electrical contact area between a tip and a rough surface. With this assumption, the scattering resistance of a mono-wall CNT is 14.6 kΩ μm-1, the top/bottom contact resistance is, respectively, 265 kΩ/385 kΩ. The bottom resistance divided in half is obtained by an interface substrate/CNT catalyst treatment. The same assumption leads to an effective compressive modulus of 175 MPa. These results are consistent with the values published by other authors. The proposed method is effective to optimise the CNT interface contact resistance before integration in a more complex functional structure.

  3. [Finite element analysis of temperature field of retina by electrical stimulation with microelectrode array].

    PubMed

    Wang, Wei; Qiao, Qingli; Gao, Weiping; Wu, Jun

    2014-12-01

    We studied the influence of electrode array parameters on temperature distribution to the retina during the use of retinal prosthesis in order to avoid thermal damage to retina caused by long-term electrical stimulation. Based on real epiretinal prosthesis, a three-dimensional model of electrical stimulation for retina with 4 X 4 microelectrode array had been established using the finite element software (COMSOL Multiphysics). The steady-state temperature field of electrical stimulation of the retina was calculated, and the effects of the electrode parameters such as the distance between the electrode contacts, the materials and area of the electrode contact on temperature field were considered. The maximum increase in the retina steady temperature was about 0. 004 degrees C with practical stimulation current. When the distance between the electrode contacts was changed from 130 microm to 520 microm, the temperature was reduced by about 0.006 microC. When the contact radius was doubled from 130 microm to 260 microm, the temperature decrease was about 0.005 degrees C. It was shown that there were little temperature changes in the retina with a 4 x 4 epiretinal microelectrode array, reflecting the safety of electrical stimulation. It was also shown that the maximum temperature in the retina decreased with increasing the distance between the electrode contacts, as well as increasing the area of electrode contact. However, the change of the maximum temperature was very small when the distance became larger than the diameter of electrode contact. There was no significant difference in the effects of temperature increase among the different electrode materials. Rational selection of the distance between the electrode contacts and their area in electrode design can reduce the temperature rise induced by electrical stimulation.

  4. Electrical contacts to individual SWCNTs: A review

    PubMed Central

    Hierold, Christofer; Haluska, Miroslav

    2014-01-01

    Summary Owing to their superior electrical characteristics, nanometer dimensions and definable lengths, single-walled carbon nanotubes (SWCNTs) are considered as one of the most promising materials for various types of nanodevices. Additionally, they can be used as either passive or active elements. To be integrated into circuitry or devices, they are typically connected with metal leads to provide electrical contacts. The properties and quality of these electrical contacts are important for the function and performance of SWCNT-based devices. Since carbon nanotubes are quasi-one-dimensional structures, contacts to them are different from those for bulk semiconductors. Additionally, some techniques used in Si-based technology are not compatible with SWCNT-based device fabrication, such as the contact area cleaning technique. In this review, an overview of the investigations of metal–SWCNT contacts is presented, including the principle of charge carrier injection through the metal–SWCNT contacts and experimental achievements. The methods for characterizing the electrical contacts are discussed as well. The parameters which influence the contact properties are summarized, mainly focusing on the contact geometry, metal type and the cleanliness of the SWCNT surface affected by the fabrication processes. Moreover, the challenges for widespread application of CNFETs are additionally discussed. PMID:25551048

  5. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOEpatents

    Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

    1999-07-13

    A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

  6. Study of Electrical Contacts and Devices in Advanced Semiconductors

    NASA Technical Reports Server (NTRS)

    Hall, H. P.; Das, K.; Alterovitz, Samuel (Technical Monitor)

    2001-01-01

    Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

  7. Fuel cell assembly fluid flow plate having conductive fibers and rigidizing material therein

    DOEpatents

    Walsh, Michael M.

    2000-01-01

    A fluid flow plate is preferably formed with three initial sections, for instance, two layers of conductive (e.g., metal) fibers and a barrier material (e.g., metal foil) which is interposed between the two layers. For example, sintering of these three sections can provide electrical path(s) between outer faces of the two layers. Then, the sintered sections can be, for instance, placed in a mold for forming of flow channel(s) into one or more of the outer faces. Next, rigidizing material (e.g., resin) can be injected into the mold, for example, to fill and/or seal space(s) about a conductive matrix of the electrical path(s). Preferably, abrading of surface(s) of the outer face(s) serves to expose electrical contact(s) to the electrical path(s).

  8. Strain-optic voltage monitor wherein strain causes a change in the optical absorption of a crystalline material

    DOEpatents

    Weiss, Jonathan D.

    1997-01-01

    A voltage monitor which uses the shift in absorption edge of crystalline material to measure strain resulting from electric field-induced deformation of piezoelectric or electrostrictive material, providing a simple and accurate means for measuring voltage applied either by direct contact with the crystalline material or by subjecting the material to an electric field.

  9. Nanocrystal solar cells processed from solution

    DOEpatents

    Alivisatos, A. Paul; Gur, Ilan; Milliron, Delia

    2013-05-14

    A photovoltaic device having a first electrode layer, a high resistivity transparent film disposed on the first electrode, a second electrode layer, and an inorganic photoactive layer disposed between the first and second electrode layers, wherein the inorganic photoactive layer is disposed in at least partial electrical contact with the high resistivity transparent film, and in at least partial electrical contact with the second electrode. The photoactive layer has a first inorganic material and a second inorganic material different from the first inorganic material, wherein the first and second inorganic materials exhibit a type II band offset energy profile, and wherein the photoactive layer has a first population of nanostructures of a first inorganic material and a second population of nanostructures of a second inorganic material.

  10. Chemical Detection using Electrically Open Circuits having no Electrical Connections

    NASA Technical Reports Server (NTRS)

    Woodward, Stanley E.; Olgesby, Donald M.; Taylor, Bryant D.; Shams, Qamar A.

    2008-01-01

    This paper presents investigations to date on chemical detection using a recently developed method for designing, powering and interrogating sensors as electrically open circuits having no electrical connections. In lieu of having each sensor from a closed circuit with multiple electrically connected components, an electrically conductive geometric pattern that is powered using oscillating magnetic fields and capable of storing an electric field and a magnetic field without the need of a closed circuit or electrical connections is used. When electrically active, the patterns respond with their own magnetic field whose frequency, amplitude and bandwidth can be correlated with the magnitude of the physical quantities being measured. Preliminary experimental results of using two different detection approaches will be presented. In one method, a thin film of a reactant is deposited on the surface of the open-circuit sensor. Exposure to a specific targeted reactant shifts the resonant frequency of the sensor. In the second method, a coating of conductive material is placed on a thin non-conductive plastic sheet that is placed over the surface of the sensor. There is no physical contact between the sensor and the electrically conductive material. When the conductive material is exposed to a targeted reactant, a chemical reaction occurs that renders the material non-conductive. The change in the material s electrical resistance within the magnetic field of the sensor alters the sensor s response bandwidth and amplitude, allowing detection of the reaction without having the reactants in physical contact with the sensor.

  11. Procedure for contact electrical resistance measurements as developed for use at Sandia National Laboratories

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Finch, J.L.

    1994-06-01

    Military Specifications call out general procedures and guidelines for conducting contact resistance measurements on chemical conversion coated panels. This paper deals with a test procedure developed at Sandia National Laboratories used to conduct contact electrical resistance on non-chromated conversion coated test panels. MIL-C-81706 {open_quotes}Chemical Conversion Materials For Coating Aluminum and Aluminum Alloys{close_quotes} was the reference specification used for guidance.

  12. Strain-optic voltage monitor wherein strain causes a change in the optical absorption of a crystalline material

    DOEpatents

    Weiss, J.D.

    1997-01-14

    A voltage monitor which uses the shift in absorption edge of crystalline material to measure strain resulting from electric field-induced deformation of piezoelectric or electrostrictive material, providing a simple and accurate means for measuring voltage applied either by direct contact with the crystalline material or by subjecting the material to an electric field. 6 figs.

  13. Remarks on the thermal stability of an Ohmic-heated nanowire

    NASA Astrophysics Data System (ADS)

    Timsit, Roland S.

    2018-05-01

    The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

  14. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOEpatents

    Kalinin, Sergei V.; Baddorf, Arthur P.; Lee, Ho Nyung; Shin, Junsoo; Gruverman, Alexei L.; Karapetian, Edgar; Kachanov, Mark

    2007-11-06

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  15. Analysis of the axisymmetric indentation of a semi-infinite piezoelectric material: The evaluation of the contact stiffness and the effective piezoelectric constant

    NASA Astrophysics Data System (ADS)

    Yang, Fuqian

    2008-04-01

    A general solution of the axisymmetric indentation is obtained in the closed form for a semi-infinite, transverse isotropic piezoelectric material by a rigid-conducting indenter of arbitrary-axisymmetric profile. Explicit relationships are derived for dependences of the indentation depth and the indentation-induced charge on indentation force and applied electrical potential. Simple formulas are obtained for contact stiffness and effective piezoelectric constant, which can be used in indentation test and piezoresponse force microscopy to analyze the elastic and piezoelectric responses of piezoelectric materials. Depending on the direction of electric field (the potential difference), the electric field can either increase or suppress indentation deformation. The corresponding results are given for cylindrical, conical, and paraboloidal indenters.

  16. Electrical properties of materials for high temperature strain gage applications

    NASA Technical Reports Server (NTRS)

    Brittain, John O.

    1989-01-01

    A study was done on the electrical resistance of materials that are potentially useful as resistance strain gages at high temperatures under static strain conditions. Initially a number of binary alloys were investigated. Later, third elements were added to these alloys, all of which were prepared by arc melting. Several transition metals were selected for experimentation, most prepared as thin films. Difficulties with electrical contacts thwarted efforts to extend measurements to the targeted 1000 C, but results obtained did suggest ways of improving the electrical resistance characteristics of certain materials.

  17. Rugged Low-Resistance Contacts To High-Tc Superconductors

    NASA Technical Reports Server (NTRS)

    Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

    1992-01-01

    Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

  18. Self-powered, ultra-sensitive, flexible tactile sensors based on contact electrification

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Zhong Lin; Zhu, Guang

    A tactile sensor for sensing touch from a human finger includes a triboelectric layer and includes a material that becomes electrically charged after being in contact with the finger. The first side of a first conductive layer is in contact with the second side of triboelectric layer. The first side of a dielectric layer is in contact with the first conductive layer and the second side of the dielectric layer is in contact with a second conductive layer. When the triboelectric layer becomes electrically charged after being in contact with the finger, the first conductive layer and the second conductivemore » layer are subjected to an electric field, which has a first field strength at the first conductive layer and a second field strength, different from the first field strength, at the second conductive layer. A plurality of tactile sensors can be arranged as a keyboard.« less

  19. Mechatronical systems and experimental methods for investigations on tribology of electrical contacts

    NASA Astrophysics Data System (ADS)

    Franek, Friedrich; Neuhaus, Alexander; Reichart, Martin; Schrank, Clemens

    2008-08-01

    The investigation of electrical low power switching contacts, including dry-circuit, is characterized as a highly interdisciplinary research field. The knowledge of plasma physics, the influence of kinetics on contact phenomena, material science and metallurgy, as well as thermal aspects and tribology, is demanded. The methods usually used at the Austrian Center of Competence for Tribology are e.g. defined contact make and break along two-independent axis using model switches, high-resolution measurement of displacement and electrical values, including the detection of arcs, contact force measurement in the kHz and cN range (one-axis and two-axis systems), on-line optical investigations (especially time lapse movie systems), state of the art 3D surface topography measurement of eroded contact surfaces, and (electron-) microscopical evaluation of metallographic cross sections. Some aspects of this methodology are presented in this paper.

  20. Overvoltage protector using varistor initiated arc

    DOEpatents

    Brainard, John P.

    1982-01-01

    Coaxial conductors are protected against electrical overvoltage by at least one element of non-electroded varistor material that adjoins each other varistor element and conductor with which it contacts. With this construction, overvoltage current initiated through the varistor material arcs at the point contacts between varistor elements and, as the current increases, the arcs increase until they become a continuous arc between conductors, bypassing the varistor material.

  1. Sensor arrays for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Freund, Michael S. (Inventor); Lewis, Nathan S. (Inventor)

    2000-01-01

    A sensor array for detecting an analyte in a fluid, comprising at least first and second chemically sensitive resistors electrically connected to an electrical measuring apparatus, wherein each of the chemically sensitive resistors comprises a mixture of nonconductive material and a conductive material. Each resistor provides an electrical path through the mixture of nonconductive material and the conductive material. The resistors also provide a difference in resistance between the conductive elements when contacted with a fluid comprising an analyte at a first concentration, than when contacted with an analyte at a second different concentration. A broad range of analytes can be detected using the sensors of the present invention. Examples of such analytes include, but are not limited to, alkanes, alkenes, alkynes, dienes, alicyclic hydrocarbons, arenes, alcohols, ethers, ketones, aldehydes, carbonyls, carbanions, polynuclear aromatics, organic derivatives, biomolecules, sugars, isoprenes, isoprenoids and fatty acids. Moreover, applications for the sensors of the present invention include, but are not limited to, environmental toxicology, remediation, biomedicine, material quality control, food monitoring and agricultural monitoring.

  2. Method for transferring thermal energy and electrical current in thin-film electrochemical cells

    DOEpatents

    Rouillard, Roger [Beloeil, CA; Domroese, Michael K [South St. Paul, MN; Hoffman, Joseph A [Minneapolis, MN; Lindeman, David D [Hudson, WI; Noel, Joseph-Robert-Gaetan [St-Hubert, CA; Radewald, Vern E [Austin, TX; Ranger, Michel [Lachine, CA; Sudano, Anthony [Laval, CA; Trice, Jennifer L [Eagan, MN; Turgeon, Thomas A [Fridley, MN

    2003-05-27

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  3. Development and testing of a superconducting link for an IR detector

    NASA Technical Reports Server (NTRS)

    Caton, R.; Selim, R.

    1991-01-01

    The development and testing of a ceramic superconducting link for an infrared detector is summarized. Areas of study included the materials used, the electrical contacts, radiation and temperature cycling effects, aging, thermal conductivity, and computer models of an ideal link. Materials' samples were processed in a tube furnace at temperatures of 840 C to 865 C for periods up to 17 days and transition temperatures and critical current densities were recorded. The project achieved better quality high superconducting transition temperature material through improved processing and also achieved high quality electrical contacts. Studies on effects of electron irradiation, temperature cycling, and aging on superconducting properties indicate that the materials will be suitable for space applications. Various presentations and publications on the study's results are reported.

  4. Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag-Cu-In Brazing Alloy.

    PubMed

    Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

    2018-01-10

    In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n -type 9.104 × 10 -3 mol % PbI₂-doped PbTe TE legs and the Ag 0.32 Cu 0.43 In 0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm² was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators.

  5. Investigation of transient temperature's influence on damage of high-speed sliding electrical contact rail surface

    NASA Astrophysics Data System (ADS)

    Zhang, Yuyan; Sun, Shasha; Guo, Quanli; Yang, Degong; Sun, Dongtao

    2016-11-01

    In the high speed sliding electrical contact with large current, the temperature of contact area rises quickly under the coupling action of the friction heating, the Joule heating and electric arc heating. The rising temperature seriously affects the conductivity of the components and the yield strength of materials, as well affects the contact state and lead to damage, so as to shorten the service life of the contact elements. Therefore, there is vital significance to measure the temperature accurately and investigate the temperature effect on damage of rail surface. Aiming at the problem of components damage in high speed sliding electrical contact, the transient heat effect on the contact surface was explored and its influence and regularity on the sliding components damage was obtained. A kind of real-time temperature measurement method on rail surface of high speed sliding electrical contact is proposed. Under the condition of 2.5 kA current load, based on the principle of infrared radiation non-contact temperature sensor was used to measure the rail temperature. The dynamic distribution of temperature field was obtained through the simulation analysis, further, the connection between temperature changes and the rail surface damage morphology, the damage volume was analyzed and established. Finally, the method to reduce rail damage and improve the life of components by changing the temperature field was discussed.

  6. Via Method for Lithography Free Contact and Preservation of 2D Materials.

    PubMed

    Telford, Evan J; Benyamini, Avishai; Rhodes, Daniel; Wang, Da; Jung, Younghun; Zangiabadi, Amirali; Watanabe, Kenji; Taniguchi, Takashi; Jia, Shuang; Barmak, Katayun; Pasupathy, Abhay N; Dean, Cory R; Hone, James

    2018-02-14

    Atomically thin 2D materials span the common components of electronic circuits as metals, semiconductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multilayer heterostructures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce "atomic printed circuit boards" that can form the basis of more complex multilayer heterostructures.

  7. Effects of oxidation and roughness on Cu contact resistance from 4 to 290 K

    NASA Technical Reports Server (NTRS)

    Nilles, M. J.; Van Sciver, S. W.

    1988-01-01

    Knowledge of the factors influencing contact resistance is important for optimizing system design in cryogenic applications. In space cryogenics, indirect cooling of infrared components is the primary concern. The presence of bolted joints results in contact resistances which can dominate all other contributions to the overall heat transfer rate. Here, thermal and electrical contact resistances measured between 4 K and 290 K for a series of bolted OFHC Cu contacts are reported. Surface roughness is found to have little effect on the overall contact resistance within the experimental limits, while oxidation can increase the contact resistance by as much as a factor of 100. Thermal and electrical contact resistances measured on the same contact show that the contact resistance temperature dependence does not follow the bulk dependence. For example, the residual resistance ratio (RRR) of the OFHC Cu is 110, but for contacts made from this material, the RRR is about two.

  8. Determination of material distribution in heading process of small bimetallic bar

    NASA Astrophysics Data System (ADS)

    Presz, Wojciech; Cacko, Robert

    2018-05-01

    The electrical connectors mostly have silver contacts joined by riveting. In order to reduce costs, the core of the contact rivet can be replaced with cheaper material, e.g. copper. There is a wide range of commercially available bimetallic (silver-copper) rivets on the market for the production of contacts. Following that, new conditions in the riveting process are created because the bi-metal object is riveted. In the analyzed example, it is a small size object, which can be placed on the border of microforming. Based on the FEM modeling of the load process of bimetallic rivets with different material distributions, the desired distribution was chosen and the choice was justified. Possible material distributions were parameterized with two parameters referring to desirable distribution characteristics. The parameter: Coefficient of Mutual Interactions of Plastic Deformations and the method of its determination have been proposed. The parameter is determined based of two-parameter stress-strain curves and is a function of these parameters and the range of equivalent strains occurring in the analyzed process. The proposed method was used for the upsetting process of the bimetallic head of the electrical contact. A nomogram was established to predict the distribution of materials in the head of the rivet and the appropriate selection of a pair of materials to achieve the desired distribution.

  9. Laboratory studies of aerosol electrification and experimental evidence for electrical breakdown at different scales.

    NASA Astrophysics Data System (ADS)

    Alois, Stefano; Merrison, Jonathan; Iversen, Jens Jacob; Sesterhenn, Joern

    2017-04-01

    Contact electrification between different particles size/material can lead to electric field generation high enough to produce electrical breakdown. Experimental studies of solid aerosol contact electrification (Alois et al., 2016) has shown various electrical breakdown phenomena; these range from field emission at the contact site (nm-scale) limiting particle surface charge concentration, to visible electrical discharges (cm-scale) observed both with the use of an electrometer and high-speed camera. In these experiments micron-size particles are injected into a low-pressure chamber, where they are deviated by an applied electric field. A laser Doppler velocimeter allows the simultaneous determination of particle size and charge of single grains. Results have shown an almost constant surface charge concentration, which is likely to be due to charge limitation by field emission at the contact site between particle and injector. In a second measurement technique, the electrically isolated injector tube (i.e. a Faraday cage) is connected to an oscilloscope and synchronised to a high speed camera filming the injection. Here the electrification of a large cloud of particles can be quantified and discharging effects studied. This study advances our understanding on the physical processes leading to electrification and electrical breakdown mechanisms.

  10. Liquid-level sensing device

    DOEpatents

    Goldfuss, G.T.

    1975-09-16

    This invention relates to a device for sensing the level of a liquid while preventing the deposition and accumulation of materials on the exterior surfaces thereof. Two dissimilar metal wires are enclosed within an electrical insulating material, the wires being joined together at one end to form a thermocouple junction outside the insulating material. Heating means is disposed within the electrical insulating material and maintains the device at a temperature substantially greater than that of the environment surrounding the device, the heating means being electrically insulated from the two dissimilar thermocouple wires. In addition, a metal sheath surrounds and contacts both the electrical insulating material and the thermocouple junction. Electrical connections are provided for connecting the heating means with a power source and for connecting the thermocouple wires with a device for sensing the electrical potential across the thermocouple junction. (auth)

  11. Reliability improvements in tunable Pb1-xSnxSe diode lasers

    NASA Technical Reports Server (NTRS)

    Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

    1980-01-01

    Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

  12. Validation of bending tests by nanoindentation for micro-contact analysis of MEMS switches

    NASA Astrophysics Data System (ADS)

    Broue, Adrien; Fourcade, Thibaut; Dhennin, Jérémie; Courtade, Frédéric; Charvet, Pierre–Louis; Pons, Patrick; Lafontan, Xavier; Plana, Robert

    2010-08-01

    Research on contact characterization for microelectromechanical system (MEMS) switches has been driven by the necessity to reach a high-reliability level for micro-switch applications. One of the main failures observed during cycling of the devices is the increase of the electrical contact resistance. The key issue is the electromechanical behaviour of the materials used at the contact interface where the current flows through. Metal contact switches have a large and complex set of failure mechanisms according to the current level. This paper demonstrates the validity of a new methodology using a commercial nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate the micro-scale contact physics. Dedicated validation tests and modelling are performed to assess the introduced methodology by analyzing the gold contact interface with 5 µm2 square bumps at various current levels. Contact temperature rise is measured, which affects the mechanical properties of the contact materials and modifies the contact topology. In addition, the data provide a better understanding of micro-contact behaviour related to the impact of current at low- to medium-power levels. This article was originally submitted for the special section 'Selected papers from the 20th Micromechanics Europe Workshop (MME 09) (Toulouse, France, 20-22 September 2009)', Journal of Micromechanics and Microengineering, volume 20, issue 6.

  13. Dopant-Free and Carrier-Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives.

    PubMed

    Gao, Pingqi; Yang, Zhenhai; He, Jian; Yu, Jing; Liu, Peipei; Zhu, Juye; Ge, Ziyi; Ye, Jichun

    2018-03-01

    By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c-Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p + - and n + -HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier-selective contacts (CSCs) can be formed directly with c-Si substrates, and thereafter form IBC cells, via a dopant-free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant-free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant-free hole-selective CSCs, i.e . , poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole-selective materials modification, interfacial passivation, contact resistivity, light-trapping structure and device architecture design, etc. By analyzing the structure-property relationships of hole-selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high-performance SCs have been highlighted.

  14. Dopant‐Free and Carrier‐Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives

    PubMed Central

    Yang, Zhenhai; He, Jian; Yu, Jing; Liu, Peipei; Zhu, Juye; Ge, Ziyi; Ye, Jichun

    2017-01-01

    Abstract By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c‐Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p+‐ and n+‐HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier‐selective contacts (CSCs) can be formed directly with c‐Si substrates, and thereafter form IBC cells, via a dopant‐free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant‐free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant‐free hole‐selective CSCs, i.e., poly(3,4‐ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole‐selective materials modification, interfacial passivation, contact resistivity, light‐trapping structure and device architecture design, etc. By analyzing the structure–property relationships of hole‐selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high‐performance SCs have been highlighted. PMID:29593956

  15. Back wall solar cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, H. W., Jr. (Inventor)

    1978-01-01

    A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

  16. Convenient mounting method for electrical measurements of thin samples

    NASA Technical Reports Server (NTRS)

    Matus, L. G.; Summers, R. L.

    1986-01-01

    A method for mounting thin samples for electrical measurements is described. The technique is based on a vacuum chuck concept in which the vacuum chuck simultaneously holds the sample and established electrical contact. The mounting plate is composed of a glass-ceramic insulating material and the surfaces of the plate and vacuum chuck are polished. The operation of the vacuum chuck is examined. The contacts on the sample and mounting plate, which are sputter-deposited through metal masks, are analyzed. The mounting method was utilized for van der Pauw measurements.

  17. Material morphology and electrical resistivity differences in EPDM rubbers.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Nancy Y. C.; Domeier, Linda A.

    2008-03-01

    Electrical resistance anomalies noted in EPDM gaskets have been attributed to zinc-enriched surface sublayers, about 10-{micro}m thick, in the sulfur cured rubber material. Gasket over-compression provided the necessary connector pin contact and was also found to cause surprising morphological changes on the gasket surfaces. These included distributions of zinc oxide whiskers in high pressure gasket areas and cone-shaped features rich in zinc, oxygen, and sulfur primarily in low pressure protruding gasket areas. Such whiskers and cones were only found on the pin side of the gaskets in contact with a molded plastic surface and not on the back side inmore » contact with an aluminum surface. The mechanisms by which such features are formed have not yet been defined.« less

  18. Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

    NASA Astrophysics Data System (ADS)

    Shuang, Y.; Sutou, Y.; Hatayama, S.; Shindo, S.; Song, Y. H.; Ando, D.; Koike, J.

    2018-04-01

    Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode.

  19. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  20. On the behavior and stability of a liquid metal in quasi-planar electric contacts

    NASA Astrophysics Data System (ADS)

    Samuilov, S. D.

    2016-06-01

    The contacts between conductors formed under relatively low pressures can be treated as quasi-planar. Melting of the material of such contacts upon the passage of electric current is used in some technological processes, but the behavior of liquid in these conditions has not been analyzed. In this study, such an estimate was obtained for specific conditions appearing under electric-pulse compacting (briquetting) of metal shavings. Analysis of derived relations shows that this estimate is valid for any quasi-2D contacts upon passage of a pulsed current of duration from microseconds to milliseconds. It is shown that the spacing between contact surfaces decreases, the liquid metal is extruded in the lateral directions, and the area of the contact and its conductivity increase. Sausage-type magnetohydrodynamic (MHD) instability and overheating instability do not evolve in these conditions because the instability wavelength is larger than the rated thickness of the molten layer; screw MHD instability can appear in slower processes.

  1. Fabrication of 1-dimension nano-material-based device and its electrical characteristics

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong; Zhang, Min

    2008-12-01

    In recent years, many kinds of 1-dimension nano-materials (Carbon nanotube, ZnO nanobelt and nanowire etc.) continue to emerge which exhibit distinct and unique electromechanical, piezoelectric, photoelectrical properties. In this paper, a 1-dimension nano-materials-based device was proposed. The bottom-up and top-down combined process were used for constructing CNT-array-based device and ZnO nanowire device. The electrical characteristics of the 1D nano-materials-based devices were also investigated. The measurement results of electrical characteristics demonstrate that it is ohm electrical contact behavior between the nano-material and micro-electrodes in the proposed device which also have the field effect. The proposed 1D nano-material-based device shows the application potential in the sensing fields.

  2. Modeling of electric and heat processes in spot resistance welding of cross-wire steel bars

    NASA Astrophysics Data System (ADS)

    Iatcheva, Ilona; Darzhanova, Denitsa; Manilova, Marina

    2018-03-01

    The aim of this work is the modeling of coupled electric and heat processes in a system for spot resistance welding of cross-wire reinforced steel bars. The real system geometry, dependences of material properties on the temperature, and changes of contact resistance and released power during the welding process have been taken into account in the study. The 3D analysis of the coupled AC electric and transient thermal field distributions is carried out using the finite element method. The novel feature is that the processes are modeled for several successive time stages, corresponding to the change of contact area, related contact resistance, and reduction of the released power, occurring simultaneously with the creation of contact between the workpieces. The values of contact resistance and power changes have been determined on the basis of preliminary experimental and theoretical investigations. The obtained results present the electric and temperature field distributions in the system. Special attention has been paid to the temperature evolution at specified observation points and lines in the contact area. The obtained information could be useful for clarification of the complicated nature of interrelated electric, thermal, mechanical, and physicochemical welding processes. Adequate modeling is also an opportunity for proper control and improvement of the system.

  3. Tunable terahertz radiation source

    DOEpatents

    Boulaevskii, Lev; Feldmann, David M; Jia, Quanxi; Koshelev, Alexei; Moody, Nathan A

    2014-01-21

    Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

  4. Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag–Cu–In Brazing Alloy

    PubMed Central

    Ben-Ayoun, Dana; Sadia, Yatir; Gelbstein, Yaniv

    2018-01-01

    In thermoelectric (TE) generators, maximizing the efficiency of conversion of direct heat to electricity requires the reduction of any thermal and electrical contact resistances between the TE legs and the metallic contacts. This requirement is especially challenging in the development of intermediate to high-temperature TE generators. PbTe-based TE materials are known to be highly efficient up to temperatures of around 500 °C; however, only a few practical TE generators based on these materials are currently commercially available. One reason for that is the insufficient bonding techniques between the TE legs and the hot-side metallic contacts. The current research is focused on the interaction between cobalt-metallized n-type 9.104 × 10−3 mol % PbI2-doped PbTe TE legs and the Ag0.32Cu0.43In0.25 brazing alloy, which is free of volatile species. Clear and fine interfaces without any noticeable formation of adverse brittle intermetallic compounds were observed following prolonged thermal treatment testing. Moreover, a reasonable electrical contact resistance of ~2.25 mΩmm2 was observed upon brazing at 600 °C, highlighting the potential of such contacts while developing practical PbTe-based TE generators. PMID:29320430

  5. Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.; Caton, R.; Selim, R.; Lee, B. I.; Modi, V.; Sherrill, M.; Leigh, H. D.; Fain, C. C.; Lewis, G.

    1993-01-01

    Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

  6. Rechargeable thin-film electrochemical generator

    DOEpatents

    Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  7. Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

    NASA Astrophysics Data System (ADS)

    Buoncristiani, A. M.; Byvik, C. E.; Caton, R.; Selim, R.; Lee, B. I.; Modi, V.; Sherrill, M.; Leigh, H. D.; Fain, C. C.; Lewis, G.

    Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

  8. A review of micro-contact physics for microelectromechanical systems (MEMS) metal contact switches

    NASA Astrophysics Data System (ADS)

    Toler, Benjamin F.; Coutu, Ronald A., Jr.; McBride, John W.

    2013-10-01

    Innovations in relevant micro-contact areas are highlighted, these include, design, contact resistance modeling, contact materials, performance and reliability. For each area the basic theory and relevant innovations are explored. A brief comparison of actuation methods is provided to show why electrostatic actuation is most commonly used by radio frequency microelectromechanical systems designers. An examination of the important characteristics of the contact interface such as modeling and material choice is discussed. Micro-contact resistance models based on plastic, elastic-plastic and elastic deformations are reviewed. Much of the modeling for metal contact micro-switches centers around contact area and surface roughness. Surface roughness and its effect on contact area is stressed when considering micro-contact resistance modeling. Finite element models and various approaches for describing surface roughness are compared. Different contact materials to include gold, gold alloys, carbon nanotubes, composite gold-carbon nanotubes, ruthenium, ruthenium oxide, as well as tungsten have been shown to enhance contact performance and reliability with distinct trade offs for each. Finally, a review of physical and electrical failure modes witnessed by researchers are detailed and examined.

  9. Electrical properties of graphene-metal contacts.

    PubMed

    Cusati, Teresa; Fiori, Gianluca; Gahoi, Amit; Passi, Vikram; Lemme, Max C; Fortunelli, Alessandro; Iannaccone, Giuseppe

    2017-07-11

    The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and metal. A low contact resistance is an imperative requirement to consider graphene as a candidate material for electronic and optoelectronic devices. Unfortunately, measurements of contact resistance in the literature do not provide a consistent picture, due to limitations of current graphene technology, and to incomplete understanding of influencing factors. Here we show that the contact resistance is intrinsically dependent on graphene sheet resistance and on the chemistry of the graphene-metal interface. We present a physical model of the contacts based on ab-initio simulations and extensive experiments carried out on a large variety of samples with different graphene-metal contacts. Our model explains the spread in experimental results as due to uncontrolled graphene doping and suggests ways to engineer contact resistance. We also predict an achievable contact resistance of 30 Ω·μm for nickel electrodes, extremely promising for applications.

  10. Electrical properties of 0.4 cm long single walled nanotubes

    NASA Astrophysics Data System (ADS)

    Yu, Zhen

    2005-03-01

    Centimeter scale aligned carbon nanotube arrays are grown from nanoparticle/metal catalyst pads[1]. We find the nanotubes grow both with and ``against the wind.'' A metal underlayer provides in-situ electrical contact to these long nanotubes with no post growth processing needed. Using the electrically contacted nanotubes, we study electrical transport of 0.4 cm long nanotubes[2]. Using this data, we are able to determine the resistance of a nanotube as a function of length quantitatively, since the contact resistance is negligible in these long nanotubes. The source drain I-V curves are quantitatively described by a classical, diffusive model. Our measurements show that the outstanding transport properties of nanotubes can be extended to the cm scale and open the door to large scale integrated nanotube circuits with macroscopic dimensions. These are the longest electrically contacted single walled nanotubes measured to date. [1] Zhen Yu, Shengdong Li, Peter J. Burke, ``Synthesis of Aligned Arrays of Millimeter Long, Straight Single-Walled Carbon Nanotubes,'' Chemistry of Materials, 16(18), 3414-3416 (2004). [2] Shengdong Li, Zhen Yu, Christopher Rutherglen, Peter J. Burke, ``Electrical properties of 0.4 cm long single-walled carbon nanotubes'' Nano Letters, 4(10), 2003-2007 (2004).

  11. Reversible temperature regulation of electrical and thermal conductivity using liquid–solid phase transitions

    PubMed Central

    Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

    2011-01-01

    Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions. PMID:21505445

  12. Reversible temperature regulation of electrical and thermal conductivity using liquid-solid phase transitions.

    PubMed

    Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

    2011-01-01

    Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions.

  13. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  14. Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    2005-01-01

    Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

  15. Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

    NASA Astrophysics Data System (ADS)

    Gaddy, Benjamin E.; Kingon, Angus I.; Irving, Douglas L.

    2013-05-01

    Ohmic RF-MEMS switches hold much promise for low power wireless communication, but long-term degradation currently plagues their reliable use. Failure in these devices occurs at the contact and is complicated by the fact that the same asperities that bear the mechanical load are also important to the flow of electrical current needed for signal processing. Materials selection holds the key to overcoming the barriers that prevent widespread use. Current efforts in materials selection have been based on the material's (or alloy's) ability to resist oxidation as well as its room-temperature properties, such as hardness and electrical conductivity. No ideal solution has yet been found via this route. This may be due, in part, to the fact that the in-use changes to the local environment of the asperity are not included in the selection criteria. For example, Joule heating would be expected to raise the local temperature of the asperity and impose a non-equilibrium thermal gradient in the same region expected to respond to mechanical actuation. We propose that these conditions should be considered in the selection process, as they would be expected to alter mechanical, electrical, and chemical mechanisms in the vicinity of the surface. To this end, we simulate the actuation of an Ohmic radio frequency micro electro mechanical systems switch by using a multi-scale method to model a current-carrying asperity in contact with a polycrystalline substrate. Our method couples continuum solutions of electrical and thermal transport equations to an underlying molecular dynamics simulation. We present simulations of gold-nickel asperities and substrates in order to evaluate the influence of alloying and local order on the early stages of contact actuation. The room temperature response of these materials is compared to the response of the material when a voltage is applied. Au-Ni interactions are accounted for through modification of the existing Zhou embedded atom method potential. The modified potential more accurately captures trends in high-temperature properties, including the enthalpy of mixing and melting temperatures. We simulate the loading of a contacting asperity to several substrates with varying Ni alloying concentrations and compare solid solution strengthening to a phase-separated system. Our simulations show that Ni concentration and configuration have an important effect on contact area, constriction resistance, thermal profiles, and material transfer. These differences suggest that a substrate with 15 at. % Ni featuring phase segregation has fewer early markers that experimentally have indicated long-term failure.

  16. Analytical study of space processing of immiscible materials for superconductors and electrical contacts

    NASA Technical Reports Server (NTRS)

    Gelles, S. H.; Collings, E. W.; Abbott, W. H.; Maringer, R. E.

    1977-01-01

    The results of a study conducted to determine the role space processing or materials research in space plays in the superconductor and electrical contact industries are presented. Visits were made to manufacturers, users, and research organizations connected with these products to provide information about the potential benefits of the space environment and to exchange views on the utilization of space facilities for manufacture, process development, or research. In addition, space experiments were suggested which could result in improved terrestrial processes or products. Notable examples of these are, in the case of superconductors, the development of Nb-bronze alloys (Tsuei alloys) and, in the electrical contact field, the production of Ag-Ni or Ag-metal oxide alloys with controlled microstructure for research and development activities as well as for product development. A preliminary experimental effort to produce and evaluate rapidly cooled Pb-Zn and Cu-Nb-Sn alloys in order to understand the relationship between microstructure and superconducting properties and to simulate the fine structure potentially achievable by space processing was also described.

  17. Silver-free Metallization Technology for Producing High Efficiency, Industrial Silicon Solar Cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Michaelson, Lynne M.; Munoz, Krystal; Karas, Joseph

    The goal of this project is to provide a commercially viable Ag-free metallization technology that will both reduce cost and increase efficiency of standard silicon solar cells. By removing silver from the front grid metallization and replacing it with lower cost nickel, copper, and tin metal, the front grid direct materials costs will decrease. This reduction in material costs should provide a path to meeting the Sunshot 2020 goal of 1 dollar / W DC. As of today, plated contacts are not widely implemented in large scale manufacturing. For organizations that wish to implement pilot scale manufacturing, only two equipmentmore » choices exist. These equipment manufacturers do not supply plating chemistry. The main goal of this project is to provide a chemistry and equipment solution to the industry that enables reliable manufacturing of plated contacts marked by passing reliability results and higher efficiencies than silver paste front grid contacts. To date, there have been several key findings that point to plated contacts performing equal to or better than the current state of the art silver paste contacts. Poor adhesion and reliability concerns are a few of the hurdles for plated contacts, specifically plated nickel directly on silicon. A key finding of the Phase 1 budget period is that the plated contacts have the same adhesion as the silver paste controls. This is a huge win for plated contacts. With very little optimization work, state of the art electrical results for plated contacts on laser ablated lines have been demonstrated with efficiencies up to 19.1% and fill factors ~80% on grid lines 40-50 um wide. The silver paste controls with similar line widths demonstrate similar electrical results. By optimizing the emitter and grid design for the plated contacts, it is expected that the electrical performance will exceed the silver paste controls. In addition, cells plated using Technic chemistry and equipment pass reliability testing; i.e. 1000 hours damp heat and 200 thermal cycles, with results similar to silver paste control cells. 100 cells have been processed through Technic’s novel demo plating tool built and installed during budget period 2. This plating tool performed consistently from cell to cell, providing gentle handling for the solar cells. An agreement has been signed with a cell manufacturer to process their cells through our plating chemistry and equipment. Their main focus for plated contacts is to reduce the direct materials cost by utilizing nickel, copper, and tin in place of silver paste. Based on current market conditions and cost model calculations, the overall savings offered by plated contacts is only 3.5% dollar/W versus silver paste contacts; however, the direct materials savings depend on the silver market. If silver prices increase, plated contacts may find a wider adoption in the solar industry in order to keep the direct materials costs down for front grid contacts.« less

  18. Apparatus and method for measuring the Seebeck coefficient and resistivity of materials

    NASA Technical Reports Server (NTRS)

    Hadek, V. (Inventor)

    1973-01-01

    An apparatus for measuring the thermoelectric properties of materials under high pressure is described that includes a pair of force transmitting assemblies constructed of thermally and electrically conductive material positioned between the ram and anvil of a press. Each force transmitting assembly has a small diameter pressing portion for contacting a face of the sample so that the sample can be squeezed between them. Each assembly also includes a heat exchanger to maintain the sample face at a controlled temperature, and an electrical conductor to carry current generated by the sample. A sleeve of thermally and electrically insulative material closely surrounds the pressing portions of the two assemblies.

  19. Thermoelectric heat exchange element

    DOEpatents

    Callas, James J.; Taher, Mahmoud A.

    2007-08-14

    A thermoelectric heat exchange module includes a first substrate including a heat receptive side and a heat donative side and a series of undulatory pleats. The module may also include a thermoelectric material layer having a ZT value of 1.0 or more disposed on at least one of the heat receptive side and the heat donative side, and an electrical contact may be in electrical communication with the thermoelectric material layer.

  20. Analysis of the Effect of Module Thickness Reduction on Thermoelectric Generator Output

    NASA Astrophysics Data System (ADS)

    Brito, F. P.; Figueiredo, L.; Rocha, L. A.; Cruz, A. P.; Goncalves, L. M.; Martins, J.; Hall, M. J.

    2016-03-01

    Conventional thermoelectric generators (TEGs) used in applications such as exhaust heat recovery are typically limited in terms of power density due to their low efficiency. Additionally, they are generally costly due to the bulk use of rare-earth elements such as tellurium. If less material could be used for the same output, then the power density and the overall cost per kilowatt (kW) of electricity produced could drop significantly, making TEGs a more attractive solution for energy harvesting of waste heat. The present work assesses the effect of reducing the amount of thermoelectric (TE) material used (namely by reducing the module thickness) on the electrical output of conventional bismuth telluride TEGs. Commercial simulation packages (ANSYS CFX and thermal-electric) and bespoke models were used to simulate the TEGs at various degrees of detail. Effects such as variation of the thermal and electrical contact resistance and the component thickness and the effect of using an element supporting matrix (e.g., eggcrate) instead of having air conduction in void areas have been assessed. It was found that indeed it is possible to reduce the use of bulk TE material while retaining power output levels equivalent to thicker modules. However, effects such as thermal contact resistance were found to become increasingly important as the active TE material thickness was decreased.

  1. Passive absolute age and temperature history sensor

    DOEpatents

    Robinson, Alex; Vianco, Paul T.

    2015-11-10

    A passive sensor for historic age and temperature sensing, including a first member formed of a first material, the first material being either a metal or a semiconductor material and a second member formed of a second material, the second material being either a metal or a semiconductor material. A surface of the second member is in contact with a surface of the first member such that, over time, the second material of the second member diffuses into the first material of the first member. The rate of diffusion for the second material to diffuse into the first material depends on a temperature of the passive sensor. One of the electrical conductance, the electrical capacitance, the electrical inductance, the optical transmission, the optical reflectance, or the crystalline structure of the passive sensor depends on the amount of the second material that has diffused into the first member.

  2. Electrical properties of fullerenol C60(OH)10/Au interface

    NASA Astrophysics Data System (ADS)

    Sakaino, Masamichi; Sun, Yong; Morimoto, Fumio

    2014-01-01

    Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300-500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C60(OH)10 material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1-2.0 MVm-1. The effects of both the charge transfer from C60 cage to OH groups and the crystallinity of the C60(OH)10 material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.

  3. Conductor-polymer composite electrode materials

    DOEpatents

    Ginley, D.S.; Kurtz, S.R.; Smyrl, W.H.; Zeigler, J.M.

    1984-06-13

    A conductive composite material useful as an electrode, comprises a conductor and an organic polymer which is reversibly electrochemically dopable to change its electrical conductivity. Said polymer continuously surrounds the conductor in intimate electrical contact therewith and is prepared by electrochemical growth on said conductor or by reaction of its corresponding monomer(s) on said conductor which has been pre-impregnated or pre-coated with an activator for said polymerization. Amount of the conductor is sufficient to render the resultant composite electrically conductive even when the polymer is in an undoped insulating state.

  4. Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires.

    PubMed

    Lord, Alex M; Ramasse, Quentin M; Kepaptsoglou, Despoina M; Evans, Jonathan E; Davies, Philip R; Ward, Michael B; Wilks, Steve P

    2017-02-08

    Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.

  5. Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

    DTIC Science & Technology

    2009-09-01

    mechanically cycled by a piezo- electric transducer ( PZT ). The resistance through the simulated switch was measured using a four-wire measurement technique...research, including a brief overview of contact theory. Then chapter 3 gives an overview of engi- 13 V I PZT Sample Mount Cantilever Lower Contact...as described in [3, 118]. The measurement of surface texture and 4These figures were published in Materials Selection in Mechanical Design, Michael F

  6. Resistivity of Rotated Graphite-Graphene Contacts.

    PubMed

    Chari, Tarun; Ribeiro-Palau, Rebeca; Dean, Cory R; Shepard, Kenneth

    2016-07-13

    Robust electrical contact of bulk conductors to two-dimensional (2D) material, such as graphene, is critical to the use of these 2D materials in practical electronic devices. Typical metallic contacts to graphene, whether edge or areal, yield a resistivity of no better than 100 Ω μm but are typically >10 kΩ μm. In this Letter, we employ single-crystal graphite for the bulk contact to graphene instead of conventional metals. The graphite contacts exhibit a transfer length up to four-times longer than in conventional metallic contacts. Furthermore, we are able to drive the contact resistivity to as little as 6.6 Ω μm(2) by tuning the relative orientation of the graphite and graphene crystals. We find that the contact resistivity exhibits a 60° periodicity corresponding to crystal symmetry with additional sharp decreases around 22° and 39°, which are among the commensurate angles of twisted bilayer graphene.

  7. Method of Fabricating a Composite Apparatus

    NASA Technical Reports Server (NTRS)

    Wilkie, W. Keats (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Hellbaum, Richard F. (Inventor); High, James W. (Inventor); Jalink, Antony, Jr. (Inventor)

    2007-01-01

    A method for fabricating a piezoelectric macro-fiber composite actuator comprises making a piezoelectric fiber sheet by providing a plurality of wafers of piezoelectric material, bonding the wafers together with an adhesive material to from a stack of alternating layers of piezoelectric material and adhesive material, and cutting through the stack in a direction substantially parallel to the thickness of the stack and across the alternating layers of piezoelectric material and adhesive material to provide at least one piezoelectric fiber sheet having two sides comprising a plurality of piezoelectric fibers in juxtaposition to the adhesive material. The method further comprises bonding two electrically conductive films to the two sides of the piezoelectric fiber sheet. At least one conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric fiber sheet.

  8. Method for starting operation of a resistance melter

    DOEpatents

    Chapman, Christopher Charles

    1977-01-01

    A method for starting the operation of a resistance furnace, where heating occurs by passing a current through the charge between two furnace electrodes and the charge is a material which is essentially electrically nonconductive when in a solid physical state but which becomes more electrically conductive when in a molten physical state, by connecting electrical resistance heating wire between the furnace electrodes, placing the wire in contact with the charge material between the electrodes and passing a current through the wire to heat the wire to a temperature sufficient to melt the material between the furnace electrodes so that as the material melts, current begins to pass between the electrodes through the melted material, further heating and melting more material until all current between the electrodes passes through the charge material without the aid or presence of the resistance element.

  9. High pressure liquid and gaseous oxygen impact sensitivity evaluation of materials for use at Kennedy Space Center

    NASA Technical Reports Server (NTRS)

    Bryan, C. J.

    1976-01-01

    The sensitivity of materials in contact with gaseous oxygen (GOX) or liquid oxygen (LOX) was examined. Specifically, the reactivity of materials when in contact with GOX or LOX if subjected to such stimuli as mechanical impact, adiabatic compression (pneumatic impact), or an electrical discharge in the form of a spark were examined. Generally, materials are more sensitive in gaseous oxygen than in liquid oxygen and impact sensitivity is known to increase with increasing pressure. Materials presently being used or considered for use in oxygen systems at KSC were evaluated. Results are given in tabular form.

  10. Electric field-driven, magnetically-stabilized ferro-emulsion phase contactor

    DOEpatents

    Scott, T.C.

    1990-07-17

    Methods and systems are disclosed for interfacial surface area contact between a dispersed phase liquid and a continuous phase liquid in counter-current flow for purposes such as solvent extraction. Initial droplets of a dispersed phase liquid material containing ferromagnetic particles functioning as a packing'' are introduced to a counter-current flow of the continuous phase. A high intensity pulsed electric field is applied so as to shatter the initial droplets into a ferromagnetic emulsion comprising many smaller daughter droplets having a greater combined total surface area than that of the initial droplets in contact with the continuous phase material. A magnetic field is applied to control the position of the ferromagnetic emulsion for enhanced coalescence of the daughter droplets into larger reformed droplets. 2 figs.

  11. Electric field-driven, magnetically-stabilized ferro-emulsion phase contactor

    DOEpatents

    Scott, Timothy C.

    1990-01-01

    Methods and systems for interfacial surface area contact between a dispersed phase liquid and a continuous phase liquid in counter-current flow for purposes such as solvent extraction. Initial droplets of a dispersed phase liquid material containing ferromagnetic particles functioning as a "packing" are introduced to a counter-current flow of the continuous phase. A high intensity pulsed electric field is applied so as to shatter the initial droplets into a ferromagnetic emulsion comprising many smaller daughter droplets having a greater combined total surface area than that of the initial droplets in contact with the continuous phase material. A magnetic field is applied to control the position of the ferromagnetic emulsion for enhanced coalescence of the daughter droplets into larger reformed droplets.

  12. Localized electrical fine tuning of passive microwave and radio frequency devices

    DOEpatents

    Findikoglu, Alp T.

    2001-04-10

    A method and apparatus for the localized electrical fine tuning of passive multiple element microwave or RF devices in which a nonlinear dielectric material is deposited onto predetermined areas of a substrate containing the device. An appropriate electrically conductive material is deposited over predetermined areas of the nonlinear dielectric and the signal line of the device for providing electrical contact with the nonlinear dielectric. Individual, adjustable bias voltages are applied to the electrically conductive material allowing localized electrical fine tuning of the devices. The method of the present invention can be applied to manufactured devices, or can be incorporated into the design of the devices so that it is applied at the time the devices are manufactured. The invention can be configured to provide localized fine tuning for devices including but not limited to coplanar waveguides, slotline devices, stripline devices, and microstrip devices.

  13. Analytical scanning evanescent microwave microscope and control stage

    DOEpatents

    Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

    2013-01-22

    A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

  14. Analytical scanning evanescent microwave microscope and control stage

    DOEpatents

    Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

    2009-06-23

    A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

  15. Flow diagram analysis of electrical fatalities in construction industry.

    PubMed

    Chi, Chia-Fen; Lin, Yuan-Yuan; Ikhwan, Mohamad

    2012-01-01

    The current study reanalyzed 250 electrical fatalities in the construction industry from 1996 to 2002 into seven patterns based on source of electricity (power line, energized equipment, improperly installed or damaged equipment), direct contact or indirect contact through some source of injury (boom vehicle, metal bar or pipe, and other conductive material). Each fatality was coded in terms of age, company size, experience, performing tasks, source of injury, accident cause and hazard pattern. The Chi-square Automatic Interaction Detector (CHAID) was applied to the coded data of the fatal electrocution to find a subset of predictors that might derive meaningful classifications or accidents scenarios. A series of Flow Diagrams was constructed based on CHAID result to illustrate the flow of electricity travelling from electrical source to human body. Each of the flow diagrams can be directly linked with feasible prevention strategies by cutting the flow of electricity.

  16. Modulation of surface flatness and van der Waals bonding of two-dimensional materials to reduce contact resistance.

    NASA Astrophysics Data System (ADS)

    Yue, Dewu; Yoo, Won Jong

    Despite that the novel quantum mechanical properties of two-dimension (2D) materials are well explored theoretically, their electronic performance is limited by the contact resistance of the metallic interface and therefore their inherent novel properties are rarely realized experimentally. In this study, we demonstrate that we can largely reduce the contact resistance induced between metal and 2D materials, by controlling the surface condition of 2D materials, eg. surface flatness and van der Waals bonding. To induce the number of more effective carrier conducting modes, we engineer the surface roughness and dangling bonds of the 2D interface in contact with metal. As a result, electrical contact resistance of the metal interface is significantly reduced and carrier mobility in the device level is enhanced correspondingly. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

  17. Grips for testing of electrical characteristics of a specimen under a mechanical load

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Briggs, Timothy; Loyola, Bryan

    Various technologies to facilitate coupled electrical and mechanical measurement of conductive materials are disclosed herein. A gripping device simultaneously holds a specimen in place and causes contact to be made between the specimen and a plurality of electrodes connected to an electrical measuring device. An electrical characteristic of the specimen is then measured while a mechanical load is applied to the specimen, and a relationship between the mechanical load and changes in the electrical characteristic can be identified.

  18. Measurement of contact angle in a clearance-fit pin-loaded hole

    NASA Technical Reports Server (NTRS)

    Prabhakaran, R.; Naik, R. A.

    1986-01-01

    A technique which measures load-contact variation in a clearance-fit, pin-loaded hole is presented in detail. A steel instrumented pin, which activates a make-or-break electrical circuit in the pin-hole contact region, was inserted into one aluminum and one polycarbonate specimen. The resulting load-contact variations are indicated schematically. The ability to accurately determine the arc of contact at any load was crucial to this measurement. It is noted that this simple experimental technique is applicable to both conducting and nonconducting materials.

  19. Neutron activated switch

    DOEpatents

    Barton, David M.

    1991-01-01

    A switch for reacting quickly to a neutron emission. A rod consisting of fissionable material is located inside a vacuum tight body. An adjustable contact is located coaxially at an adjustable distance from one end of the rod. Electrical leads are connected to the rod and to the adjustable contact. With a vacuum drawn inside the body, a neutron bombardment striking the rod causes it to heat and expand longitudinally until it comes into contact with the adjustable contact. This circuit closing occurs within a period of a few microseconds.

  20. Nanoporous materials for reducing the over potential of creating hydrogen by water electrolysis

    DOEpatents

    Anderson, Marc A.; Leonard, Kevin C.

    2016-06-14

    Disclosed is an electrolyzer including an electrode including a nanoporous oxide-coated conducting material. Also disclosed is a method of producing a gas through electrolysis by contacting an aqueous solution with an electrode connected to an electrical power source, wherein the electrode includes a nanoporous oxide-coated conducting material.

  1. Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vecchiola, Aymeric; Concept Scientific Instruments, ZA de Courtaboeuf, 2 rue de la Terre de Feu, 91940 Les Ulis; Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau

    An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10more » decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes.« less

  2. Properties of carbon composite paper derived from coconut coir as a function of polytetrafluoroethylene content

    NASA Astrophysics Data System (ADS)

    Destyorini, Fredina; Indriyati; Indayaningsih, Nanik; Prihandoko, Bambang; Zulfia Syahrial, Anne

    2018-03-01

    The carbon composite papers were produced by utilizing carbon materials from coconut coir. In the present work, carbon composite papers (CCP) were prepared by mixing carbon materials in the form of powder and fibre with polymer (ethylene vinyl acetate and polyethylene glycol) in xylene at 100°C. Then, polytetrafluoroethylene (PTFE) with different content was used to treat the surface of CCP. The properties of PTFE-coated CCP were analysed by means of contact angle measurement, tensile testing, porosity, density, and electrical conductivity measurements. As expected, all CCP’s surfaces treated with PTFE were found to be hydrophobic with contact angle >120° and relatively constant during 60 minutes measurement. Furthermore, water contact angle, density, and mechanical properties of CCP generally increase with increasing PTFE content. However, the porosity and electrical conductivity of CCP decrease slightly as the PTFE content increased from 0 wt% to 30 wt%. Based on the observation and analysis, the optimum PTFE content on CCP was 20 %, in which the mechanical properties and hydrophobicity behaviour were improved significantly, but it was only caused a very small drop in porosity and electrical conductivity

  3. Jumping liquid metal droplet in electrolyte triggered by solid metal particles

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tang, Jianbo; University of Chinese Academy of Sciences, Beijing 100049; Wang, Junjie

    2016-05-30

    We report the electron discharge effect due to point contact between liquid metal and solid metal particles in electrolyte. Adding nickel particles induces drastic hydrogen generating and intermittent jumping of a sub-millimeter EGaIn droplet in NaOH solution. Observations from different orientations disclose that such jumping behavior is triggered by pressurized bubbles under the assistance of interfacial interactions. Hydrogen evolution around particles provides clear evidence that such electric instability originates from the varied electric potential and morphology between the two metallic materials. The point-contact-induced charge concentration significantly enhances the near-surface electric field intensity at the particle tips and thus causes electricmore » breakdown of the electrolyte.« less

  4. Optimization of power generating thermoelectric modules utilizing LNG cold energy

    NASA Astrophysics Data System (ADS)

    Jeong, Eun Soo

    2017-12-01

    A theoretical investigation to optimize thermoelectric modules, which convert LNG cold energy into electrical power, is performed using a novel one-dimensional analytic model. In the model the optimum thermoelement length and external load resistance, which maximize the energy conversion ratio, are determined by the heat supplied to the cold heat reservoir, the hot and cold side temperatures, the thermal and electrical contact resistances and the properties of thermoelectric materials. The effects of the thermal and electrical contact resistances and the heat supplied to the cold heat reservoir on the maximum energy conversion ratio, the optimum thermoelement length and the optimum external load resistance are shown.

  5. Method for initiating in-situ vitrification using an impregnated cord

    DOEpatents

    Carter, John G.

    1991-01-01

    In-situ vitrification of soil is initiated by placing a cord of dielectric material impregnated with conductive material in thermally-conductive contact with the soil, and energizing the cord with an electric current for heating the cord and starting the vitrification process.

  6. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Trivedi, Sudhir B.; Kutcher, Susan W.; Rosemeier, Cory A.

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult duemore » to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.« less

  7. Electrochromic optical switching device

    DOEpatents

    Lampert, C.M.; Visco, S.J.

    1992-08-25

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

  8. Electrochromic optical switching device

    DOEpatents

    Lampert, Carl M.; Visco, Steven J.

    1992-01-01

    An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

  9. Importance of Schottky barriers for wide-bandgap thermoelectric devices

    NASA Astrophysics Data System (ADS)

    Wais, M.; Held, K.; Battiato, M.

    2018-04-01

    The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.

  10. Monolithic integration of a MOSFET with a MEMS device

    DOEpatents

    Bennett, Reid; Draper, Bruce

    2003-01-01

    An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

  11. Report on accelerated corrosion studies.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mowry, Curtis Dale; Glass, Sarah Jill; Sorensen, Neil Robert

    2011-03-01

    Sandia National Laboratories (SNL) conducted accelerated atmospheric corrosion testing for the U.S. Consumer Product Safety Commission (CPSC) to help further the understanding of the development of corrosion products on conductor materials in household electrical components exposed to environmental conditions representative of homes constructed with problem drywall. The conditions of the accelerated testing were chosen to produce corrosion product growth that would be consistent with long-term exposure to environments containing humidity and parts per billion (ppb) levels of hydrogen sulfide (H{sub 2}S) that are thought to have been the source of corrosion in electrical components from affected homes. This report documentsmore » the test set-up, monitoring of electrical performance of powered electrical components during the exposure, and the materials characterization conducted on wires, screws, and contact plates from selected electrical components. No degradation in electrical performance (measured via voltage drop) was measured during the course of the 8-week exposure, which was approximately equivalent to 40 years of exposure in a light industrial environment. Analyses show that corrosion products consisting of various phases of copper sulfide, copper sulfate, and copper oxide are found on exposed surfaces of the conductor materials including wires, screws, and contact plates. The morphology and the thickness of the corrosion products showed a range of character. In some of the copper wires that were observed, corrosion product had flaked or spalled off the surface, exposing fresh metal to the reaction with the contaminant gasses; however, there was no significant change in the wire cross-sectional area.« less

  12. Better Ohmic Contacts For InP Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

  13. The formation mechanism for printed silver-contacts for silicon solar cells.

    PubMed

    Fields, Jeremy D; Ahmad, Md Imteyaz; Pool, Vanessa L; Yu, Jiafan; Van Campen, Douglas G; Parilla, Philip A; Toney, Michael F; van Hest, Maikel F A M

    2016-04-01

    Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant and non-toxic materials, a better understanding the contact formation process during firing is required. Here, we use in situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 and 650 °C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposing the Si surface. Then, above 650 °C, Ag(+) dissolves into the molten glass frit - key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.

  14. The formation mechanism for printed silver-contacts for silicon solar cells

    DOE PAGES

    Fields, Jeremy D.; Ahmad, Md. Imteyaz; Pool, Vanessa L.; ...

    2016-04-01

    Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant, and non-toxic materials requires understanding the contact formation process during firing. Here, we use in-situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 degrees C and 650 degrees C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposingmore » the Si surface. Then, above 650 degrees C, Ag+ dissolves into the molten glass frit -- key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.« less

  15. Low resistivity contact to iron-pnictide superconductors

    DOEpatents

    Tanatar, Makariy; Prozorov, Ruslan; Ni, Ni; Bud& #x27; ko, Sergey; Canfield, Paul

    2013-05-28

    Method of making a low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material therebetween, such as using a tin or tin-based solder. The superconductor can be based on doped AFe.sub.2As.sub.2, where A can be Ca, Sr, Ba, Eu or combinations thereof for purposes of illustration only.

  16. Method for initiating in-situ vitrification using an impregnated cord

    DOEpatents

    Carter, J.G.

    1991-04-02

    In-situ vitrification of soil is initiated by placing a cord of dielectric material impregnated with conductive material in thermally-conductive contact with the soil, and energizing the cord with an electric current for heating the cord and starting the vitrification process. 1 figure.

  17. Electrical properties of fullerenol C{sub 60}(OH){sub 10}/Au interface

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sakaino, Masamichi, E-mail: sun@ele.kyutech.ac.jp; Sun, Yong; Morimoto, Fumio

    Electrical properties of the C{sub 60}(OH){sub 10}/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300–500 K. The Schottky barrier of the C{sub 60}(OH){sub 10}/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C{sub 60}(OH){sub 10} material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1–2.0 MVm{sup −1}. The effects of both the charge transfer from C{sub 60} cage to OH groups and the crystallinity of themore » C{sub 60}(OH){sub 10} material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.« less

  18. Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.

    PubMed

    Andrews, Joseph B; Mondal, Kunal; Neumann, Taylor V; Cardenas, Jorge A; Wang, Justin; Parekh, Dishit P; Lin, Yiliang; Ballentine, Peter; Dickey, Michael D; Franklin, Aaron D

    2018-05-14

    Flexible and stretchable electronics are poised to enable many applications that cannot be realized with traditional, rigid devices. One of the most promising options for low-cost stretchable transistors are printed carbon nanotubes (CNTs). However, a major limiting factor in stretchable CNT devices is the lack of a stable and versatile contact material that forms both the interconnects and contact electrodes. In this work, we introduce the use of eutectic gallium-indium (EGaIn) liquid metal for electrical contacts to printed CNT channels. We analyze thin-film transistors (TFTs) fabricated using two different liquid metal deposition techniques-vacuum-filling polydimethylsiloxane (PDMS) microchannel structures and direct-writing liquid metals on the CNTs. The highest performing CNT-TFT was realized using vacuum-filled microchannel deposition with an in situ annealing temperature of 150 °C. This device exhibited an on/off ratio of more than 10 4 and on-currents as high as 150 μA/mm-metrics that are on par with other printed CNT-TFTs. Additionally, we observed that at room temperature the contact resistances of the vacuum-filled microchannel structures were 50% lower than those of the direct-write structures, likely due to the poor adhesion between the materials observed during the direct-writing process. The insights gained in this study show that stretchable electronics can be realized using low-cost and solely solution processing techniques. Furthermore, we demonstrate methods that can be used to electrically characterize semiconducting materials as transistors without requiring elevated temperatures or cleanroom processes.

  19. 1-dimension nano-material-based flexible device

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong

    2009-11-01

    1D nano-material-based flexible devices has attracted considerable attention owing to the growing need of the high-sensitivity flexible sensor, portable consumer electronics etc.. In this paper, the 1D nano-materials-based flexible device on polyimide substrate was proposed. The bottom-up and top-down combined process were used for constructing the ZnO nanowire and the CNT-based flexible devices. Their electrical characteristics were also investigated. The measurement results demonstrate that the flexible device covered with a layer of Al2O3 has good ohm electrical contact behavior between the nano-material and micro-electrodes. The proposed 1D nano-material-based flexible device shows the application potential in the sensing fields.

  20. Computational study of graphene-based vertical field effect transistor

    NASA Astrophysics Data System (ADS)

    Chen, Wenchao; Rinzler, Andrew; Guo, Jing

    2013-03-01

    Poisson and drift-diffusion equations are solved in a three-dimensional device structure to simulate graphene-based vertical field effect transistors (GVFETs). Operation mechanisms of the GVFET with and without punched holes in the graphene source contact are presented and compared. The graphene-channel Schottky barrier can be modulated by gate electric field due to graphene's low density of states. For the graphene contact with punched holes, the contact barrier thinning and lowering around punched hole edge allow orders of magnitude higher tunneling current compared to the region away from the punched hole edge, which is responsible for significant performance improvement as already verified by experiments. Small hole size is preferred due to less electrostatic screening from channel inversion layer, which gives large electric field around the punched hole edge, thus, leading to a thinner and lower barrier. Bilayer and trilayer graphenes as the source contact degrade the performance improvement because stronger electrostatic screening leads to smaller contact barrier lowering and thinning. High punched hole area percentage improves current performance by allowing more gate electric field to modulate the graphene-channel barrier. Low effective mass channel material gives better on-off current ratio.

  1. Conduction in In 2O 3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

    DOE PAGES

    Veal, B. W.; Eastman, J. A.

    2017-03-01

    Thin film In 2O 3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In 2O 3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes inmore » the contact resistance.« less

  2. A generic approach for vertical integration of nanowires.

    PubMed

    Latu-Romain, E; Gilet, P; Noel, P; Garcia, J; Ferret, P; Rosina, M; Feuillet, G; Lévy, F; Chelnokov, A

    2008-08-27

    We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.

  3. Electrodes for microfluidic applications

    DOEpatents

    Crocker, Robert W [Fremont, CA; Harnett, Cindy K [Livermore, CA; Rognlien, Judith L [Livermore, CA

    2006-08-22

    An electrode device for high pressure applications. These electrodes, designed to withstand pressure of greater than 10,000 psi, are adapted for use in microfluidic devices that employ electrokinetic or electrophoretic flow. The electrode is composed, generally, of an outer electrically insulating tubular body having a porous ceramic frit material disposed in one end of the outer body. The pores of the porous ceramic material are filled with an ion conductive polymer resin. A conductive material situated on the upper surface of the porous ceramic frit material and, thus isolated from direct contact with the electrolyte, forms a gas diffusion electrode. A metal current collector, in contact with the gas diffusion electrode, provides connection to a voltage source.

  4. Modifying Surface Energy of Graphene via Plasma-Based Chemical Functionalization to Tune Thermal and Electrical Transport at Metal Interfaces.

    PubMed

    Foley, Brian M; Hernández, Sandra C; Duda, John C; Robinson, Jeremy T; Walton, Scott G; Hopkins, Patrick E

    2015-08-12

    The high mobility exhibited by both supported and suspended graphene, as well as its large in-plane thermal conductivity, has generated much excitement across a variety of applications. As exciting as these properties are, one of the principal issues inhibiting the development of graphene technologies pertains to difficulties in engineering high-quality metal contacts on graphene. As device dimensions decrease, the thermal and electrical resistance at the metal/graphene interface plays a dominant role in degrading overall performance. Here we demonstrate the use of a low energy, electron-beam plasma to functionalize graphene with oxygen, fluorine, and nitrogen groups, as a method to tune the thermal and electrical transport properties across gold-single layer graphene (Au/SLG) interfaces. We find that while oxygen and nitrogen groups improve the thermal boundary conductance (hK) at the interface, their presence impairs electrical transport leading to increased contact resistance (ρC). Conversely, functionalization with fluorine has no impact on hK, yet ρC decreases with increasing coverage densities. These findings indicate exciting possibilities using plasma-based chemical functionalization to tailor the thermal and electrical transport properties of metal/2D material contacts.

  5. Magneto-Thermo-Triboelectric Generator (MTTG) for thermal energy harvesting

    NASA Astrophysics Data System (ADS)

    Jang, Kwang Yeop; Lee, James; Lee, Dong-Gun

    2016-04-01

    We present a novel thermal energy harvesting system using triboelectric effect. Recently, there has been intensive research efforts on energy harvesting using triboelectric effect, which can produce surprising amount of electric power (when compared to piezoelectric materials) by rubbing or touching (i.e, electric charge by contact and separation) two different materials together. Numerous studies have shown the possibility as an attractive alternative with good transparency, flexibility and low cost abilities for its use in wearable device and smart phone applications markets. However, its application has been limited to only vibration source, which can produce sustained oscillation with maintaining contact and separation states repeatedly for triboelectric effect. Thus, there has been no attempt toward thermal energy source. The proposed approach can convert thermal energy into electricity by pairing triboelectric effect and active ferromagnetic materials The objective of the research is to develop a new manufacturing process of design, fabrication, and testing of a Magneto-Thermo-Triboelectric Generator (MTTG). The results obtained from the approach show that MTTG devices have a feasible power energy conversion capability from thermal energy sources. The tunable design of the device is such that it has efficient thermal capture over a wide range of operation temperature in waste heat.

  6. Probability of conductive bond formation in a percolating network of nanowires with fusible tips

    NASA Astrophysics Data System (ADS)

    Rykaczewski, Konrad; Wang, Robert Y.

    2018-03-01

    Meeting the heat dissipation demands of microelectronic devices requires development of polymeric composites with high thermal conductivity. This property is drastically improved by percolation networks of metallic filler particles that have their particle-to-particle contact resistances reduced through thermal or electromagnetic fusing. However, composites with fused metallic fillers are electrically conductive, which prevents their application within the chip-board and the inter-chip gaps. Here, we propose that electrically insulating composites for these purposes can be achieved by the application of fusible metallic coatings to the tips of nanowires with thermally conductive but electrically insulating cores. We derive analytical models that relate the ratio of the coated and total nanowire lengths to the fraction of fused, and thus conductive, bonds within percolating networks of these structures. We consider two types of materials for these fusible coatings. First, we consider silver-like coatings, which form only conductive bonds when contacting the silver-like coating of another nanowire. Second, we consider liquid metal-like coatings, which form conductive bonds regardless of whether they contact a coated or an uncoated segment of another nanowire. These models were validated using Monte Carlo simulations, which also revealed that electrical short-circuiting is highly unlikely until most of the wire is coated. Furthermore, we demonstrate that switching the tip coating from silver- to liquid metal-like materials can double the fraction of conductive bonds. Consequently, this work provides motivation to develop scalable methods for fabrication of the hybrid liquid-coated nanowires, whose dispersion in a polymer matrix is predicted to yield highly thermally conductive but electrically insulating composites.

  7. The processing of materials in outer space

    NASA Technical Reports Server (NTRS)

    Gelles, S. H.; Colling, E. W.

    1977-01-01

    Zero-gravity environment may lead to fabrication of new and improved materials. According to comprehensive study of application of this promising technology to superconducting and electrical contact materials, outer space processing could improve microstructure and homogeneity of many single and multicomponent systems formed from solidification of fluid phases. New structures that are impossible to form terrestrially may also be accessible in space environment.

  8. Large contact noise in graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

    Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

  9. SHOCKPROOF MAGNETIC REED SWITCH

    DOEpatents

    Medal, E.

    1962-03-13

    A shockproof magnetic reed switch is described which comprises essentially a plurality of pairs of reed contacts of magnetic, electrical conducting material which are arranged generally in circumferential spaced relationship. At least two of the pairs are disposed to operate at a predetermined angle with respect to each other, and the contacts are wired in the circuit, so that the continuity, or discontinuity, of the circuit is not affected by a shock imposed on the switch. The contacts are hermetically sealed within an outer tubular jacket. (AEC)

  10. Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices

    NASA Technical Reports Server (NTRS)

    Vandersande, Ian W. (Inventor); Ewell, Richard (Inventor); Fleurial, Jean-Pierre (Inventor); Lyon, Hylan B. (Inventor)

    1998-01-01

    A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

  11. Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive Polymer Anode for Li-ion Batteries

    NASA Astrophysics Data System (ADS)

    Gu, Meng; Xiao, Xing-Cheng; Liu, Gao; Thevuthasan, Suntharampillai; Baer, Donald R.; Zhang, Ji-Guang; Liu, Jun; Browning, Nigel D.; Wang, Chong-Min

    2014-01-01

    Electrode used in lithium-ion battery is invariably a composite of multifunctional components. The performance of the electrode is controlled by the interactive function of all components at mesoscale. Fundamental understanding of mesoscale phenomenon sets the basis for innovative designing of new materials. Here we report the achievement and origin of a significant performance enhancement of electrode for lithium ion batteries based on Si nanoparticles wrapped with conductive polymer. This new material is in marked contrast with conventional material, which exhibit fast capacity fade. In-situ TEM unveils that the enhanced cycling stability of the conductive polymer-Si composite is associated with mesoscale concordant function of Si nanoparticles and the conductive polymer. Reversible accommodation of the volume changes of Si by the conductive polymer allows good electrical contact between all the particles during the cycling process. In contrast, the failure of the conventional Si-electrode is probed to be the inadequate electrical contact.

  12. Measuring Thicknesses of Wastewater Films

    NASA Technical Reports Server (NTRS)

    Schubert, F. H.; Davenport, R. J.

    1987-01-01

    Sensor determines when thickness of film of electrically conductive wastewater on rotating evaporator drum exceeds preset value. Sensor simple electrical probe that makes contact with liquid surface. Made of materials resistant to chemicals in liquid. Mounted on shaft in rotating cylinder, liquid-thickness sensor extends toward cylinder wall so tip almost touches. Sensor body accommodates probe measuring temperature of evaporated water in cylinder.

  13. Nanoparticle-wetted surfaces for relays and energy transmission contacts.

    PubMed

    Voevodin, Andrey A; Vaia, Richard A; Patton, Steven T; Diamanti, Steven; Pender, Mark; Yoonessi, Mitra; Brubaker, Jennifer; Hu, Jian-Jun; Sanders, Jeffrey H; Phillips, Benjamin S; MacCuspie, Robert I

    2007-11-01

    Submonolayer coatings of noble-metal nanoparticle liquids (NPLs) are shown to provide replenishable surfaces with robust asperities and metallic conductivity that extends the durability of electrical relays by 10 to 100 times (depending on the current driven through the contact) as compared to alternative approaches. NPLs are single-component materials consisting of a metal nanoparticle core (5-20 nm Au or Pt nanoparticles) surrounded by a covalently tethered ionic-liquid corona of 1.5 to 2 nm. Common relay failure modes, such as stiction, surface distortion, and contact shorting, are suppressed with the addition of a submonolayer of NPLs to the contact surfaces. This distribution of NPLs results in a force profile for a contact-retraction cycle that is distinct from bare Au contacts and thicker, multilayer coatings of NPLs. Postmortem examination reveals a substantial decrease in topological change of the electrode surface relative to bare contacts, as well as an indication of lateral migration of the nanoparticles from the periphery towards the contact. A general extension of this concept to dynamic physical interfaces experiencing impact, sliding, or rolling affords alternatives to increase reliability and reduced losses for transmittance of electrical and mechanical energy.

  14. Towards an optimal contact metal for CNTFETs.

    PubMed

    Fediai, Artem; Ryndyk, Dmitry A; Seifert, Gotthard; Mothes, Sven; Claus, Martin; Schröter, Michael; Cuniberti, Gianaurelio

    2016-05-21

    Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated combination of the Green function formalism and density functional theory to perform an overall ab initio simulation of extended CNT-metal contacts of an arbitrary length (including infinite), a previously not achievable level of simulations. We provide a systematic and comprehensive discussion of metal-CNT contact properties as a function of the metal type and the contact length. We have found and been able to explain very uncommon relations between chemical, physical and electrical properties observed in CNT-metal contacts. The calculated electrical characteristics are in reasonable quantitative agreement and exhibit similar trends as the latest experimental data in terms of: (i) contact resistance for Lc = ∞, (ii) scaling of contact resistance Rc(Lc); (iii) metal-defined polarity of a CNTFET. Our results can guide technology development and contact material selection for downscaling the length of side-contacts below 10 nm.

  15. Anode-cathode power distribution systems and methods of using the same for electrochemical reduction

    DOEpatents

    Koehl, Eugene R; Barnes, Laurel A; Wiedmeyer, Stanley G; Williamson, Mark A; Willit, James L

    2014-01-28

    Power distribution systems are useable in electrolytic reduction systems and include several cathode and anode assembly electrical contacts that permit flexible modular assembly numbers and placement in standardized connection configurations. Electrical contacts may be arranged at any position where assembly contact is desired. Electrical power may be provided via power cables attached to seating assemblies of the electrical contacts. Cathode and anode assembly electrical contacts may provide electrical power at any desired levels. Pairs of anode and cathode assembly electrical contacts may provide equal and opposite electrical power; different cathode assembly electrical contacts may provide different levels of electrical power to a same or different modular cathode assembly. Electrical systems may be used with an electrolyte container into which the modular cathode and anode assemblies extend and are supported above, with the modular cathode and anode assemblies mechanically and electrically connecting to the respective contacts in power distribution systems.

  16. Spatial Mapping of the Mobility-Lifetime (microtau) Production in Cadmium Zinc Telluride Nuclear Radiation Detectors Using Transport Imaging

    DTIC Science & Technology

    2013-06-01

    Under the influence of an electrical field, these electrons and holes migrate to their respective electrodes, where they are collected and...an electrical response which translates to an intensity reading on the detector’s readout meter. Since high-resolution detector materials are the...magnitude of three factors: inherent statistical variation of the electric signal measured at the detector’s contacts (Fano noise ∆EF), random electron

  17. Magnetic and electrical control of engineered materials

    DOEpatents

    Schuller, Ivan K.; de La Venta Granda, Jose; Wang, Siming; Ramirez, Gabriel; Erekhinskiy, Mikhail; Sharoni, Amos

    2016-08-16

    Methods, systems, and devices are disclosed for controlling the magnetic and electrical properties of materials. In one aspect, a multi-layer structure includes a first layer comprising a ferromagnetic or ferrimagnetic material, and a second layer positioned within the multi-layer structure such that a first surface of the first layer is in direct physical contact with a second surface of the second layer. The second layer includes a material that undergoes structural phase transitions and metal-insulator transitions upon experiencing a change in temperature. One or both of the first and second layers are structured to allow a structural phase change associated with the second layer cause a change magnetic properties of the first layer.

  18. Surface Flashover of Semiconductors: A Fundamental Study

    DTIC Science & Technology

    1993-06-16

    surface electric fields for a number of samples with aluminum and gold contacts. Effects of processing varia- tions such as anneal method (rapid thermal...more uniform pre- breakdown surface fields. 3. Various contact materials and processing methods were used to determine effects on flashover...diffusion depths determined by this method were generally consistent with the estimated depths. 2-4 In order to characterize better the diffused layers

  19. Carbon nanotubes/fluorinated polymers nanocomposite thin films for electrical contacts lubrication

    NASA Astrophysics Data System (ADS)

    Benedetto, A.; Viel, P.; Noël, S.; Izard, N.; Chenevier, P.; Palacin, S.

    2007-09-01

    The need to operate in extreme environmental conditions (ultra high vacuum, high temperatures, aerospatial environment, …) and the miniaturization toward micro electromechanical systems is demanding new materials in the field of low-level electrical contacts lubrication. Dry and chemically immobilized lubrication is expected to be an alternative to the traditional wet lubricants oils. With the goal to conciliate electrical conductivity and lubricant properties we designed nanocomposite thin films composed of a 2D carbon nanotubes network embedded in an organic matrix. The nanotubes networks were deposited on gold surfaces modified by electrochemical cathodic grafting of poly(acrylonitrile). The same substrate served for covalently bonding the low-friction organic matrix. Three different matrixes were tested: a perfluorinated oligomer chemically grafted and two different polyfluorinated acrylates electrochemically grafted. The nanocomposite thin films have been characterized by ATR FT-IR, XPS and Raman spectroscopy. We measured the effects of the different matrixes and the nanotubes addition on the tribological properties and on the contact resistances of the films.

  20. PV cells electrical parameters measurement

    NASA Astrophysics Data System (ADS)

    Cibira, Gabriel

    2017-12-01

    When measuring optical parameters of a photovoltaic silicon cell, precise results bring good electrical parameters estimation, applying well-known physical-mathematical models. Nevertheless, considerable re-combination phenomena might occur in both surface and intrinsic thin layers within novel materials. Moreover, rear contact surface parameters may influence close-area re-combination phenomena, too. Therefore, the only precise electrical measurement approach is to prove assumed cell electrical parameters. Based on theoretical approach with respect to experiments, this paper analyses problems within measurement procedures and equipment used for electrical parameters acquisition within a photovoltaic silicon cell, as a case study. Statistical appraisal quality is contributed.

  1. Carbon Nanotube Interconnect

    NASA Technical Reports Server (NTRS)

    Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2006-01-01

    Method and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

  2. Built-in Electric Field Induced Mechanical Property Change at the Lanthanum Nickelate/Nb-doped Strontium Titanate Interfaces

    DOE PAGES

    Chien, TeYu; Liu, Jian; Yost, Andrew J.; ...

    2016-01-08

    The interactions between electric field and the mechanical properties of materials are important for the applications of microelectromechanical and nanoelectromechanical systems, but relatively unexplored for nanoscale materials. Here, we observe an apparent correlation between the change of the fractured topography of Nb-doped SrTiO 3 (Nb:STO) within the presence of a built-in electric field resulting from the Schottky contact at the interface of a metallic LaNiO 3 thin film utilizing cross-sectional scanning tunneling microscopy and spectroscopy. The change of the inter-atomic bond length mechanism is argued to be the most plausible origin. This picture is supported by the strong-electric-field-dependent permittivity inmore » STO and the existence of the dielectric dead layer at the interfaces of STO with metallic films. Finally, these results provided direct evidence and a possible mechanism for the interplay between the electric field and the mechanical properties on the nanoscale for perovskite materials.« less

  3. Joining of thermoplastic substrates by microwaves

    DOEpatents

    Paulauskas, Felix L.; Meek, Thomas T.

    1997-01-01

    A method for joining two or more items having surfaces of thermoplastic material includes the steps of depositing an electrically-conductive material upon the thermoplastic surface of at least one of the items, and then placing the other of the two items adjacent the one item so that the deposited material is in intimate contact with the surfaces of both the one and the other items. The deposited material and the thermoplastic surfaces contacted thereby are then exposed to microwave radiation so that the thermoplastic surfaces in contact with the deposited material melt, and then pressure is applied to the two items so that the melted thermoplastic surfaces fuse to one another. Upon discontinuance of the exposure to the microwave energy, and after permitting the thermoplastic surfaces to cool from the melted condition, the two items are joined together by the fused thermoplastic surfaces. The deposited material has a thickness which is preferably no greater than a skin depth, .delta..sub.s, which is related to the frequency of the microwave radiation and characteristics of the deposited material in accordance with an equation.

  4. Stencil Nano Lithography Based on a Nanoscale Polymer Shadow Mask: Towards Organic Nanoelectronics

    PubMed Central

    Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E. B.; Hyoung Lee, Wi; Wook Lee, Sang

    2015-01-01

    A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices. PMID:25959389

  5. Stencil nano lithography based on a nanoscale polymer shadow mask: towards organic nanoelectronics.

    PubMed

    Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E B; Hyoung Lee, Wi; Wook Lee, Sang

    2015-05-11

    A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices.

  6. Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

    NASA Astrophysics Data System (ADS)

    Nair, Shiny; Kathiresan, M.; Mukundan, T.

    2018-02-01

    Device characteristics of organic thin film transistor (OTFT) fabricated with conducting polyaniline:polystyrene sulphonic acid (PANi-PSS) electrodes, patterned by the Parylene lift-off method are systematically analyzed by way of two dimensional numerical simulation. The device simulation was performed taking into account field-dependent mobility, low mobility layer at the electrode-semiconductor interface, trap distribution in pentacene film and trapped charge at the organic/insulator interface. The electrical characteristics of bottom contact thin film transistor with PANi-PSS electrodes and pentacene active material is superior to those with palladium electrodes due to a lower charge injection barrier. Contact resistance was extracted in both cases by the transfer line method (TLM). The extracted charge concentration and potential profile from the two dimensional numerical simulation was used to explain the observed electrical characteristics. The simulated device characteristics not only matched the experimental electrical characteristics, but also gave an insight on the charge injection, transport and trap properties of the OTFTs as a function of different electrode materials from the perspectives of transistor operation.

  7. Thermal management system and method for a solid-state energy storing device

    DOEpatents

    Rouillard, Roger; Domroese, Michael K.; Gauthier, Michel; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Rouillard, Jean; Shiota, Toshimi; St-Germain, Philippe; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-01-01

    An improved electrochemical energy storing device includes a number of thin-film electrochemical cells which are maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of each electrochemical cell, conducts current into and out of the electrochemical cells and also conducts thermal energy between the electrochemical cells and thermally conductive material disposed on a wall structure adjacent the conductors. The wall structure includes electrically resistive material, such as an anodized coating or a thin film of plastic. The thermal conductors are fabricated to include a spring mechanism which expands and contacts to maintain mechanical contact between the electrochemical cells and the thermally conductive material in the presence of relative movement between the electrochemical cells and the wall structure. An active cooling apparatus may be employed external to a hermetically sealed housing containing the electrochemical cells to enhance the transfer of thermal energy into and out of the electrochemical cells. An integrated interconnect board may be disposed within the housing onto which a number of electrical and electro-mechanical components are mounted. Heat generated by the components is conducted from the interconnect board to the housing using the thermal conductors.

  8. Flywheel for an electro-mechanical fastener driving tool

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Crutcher, J. P.

    1985-05-28

    An improved flywheel for an electro-mechanical tool, such as a nailer or stapler. The tool is of the type provided with a driver which is frictionally moved through a working stroke by means of an electrically driven flywheel which presses the driver against a support element, such as a counterrotating flywheel, a low inertia roller, or the like. The flywheel is provided with circumferential grooves while maintaining the optimum contact area between the flywheel and the driver. The grooves provide voids along the travelling driver-flywheel contact line into which foreign material on the driver and flywheel flows to prevent build-upmore » of such foreign material at the driver-flywheel contact area sufficient to result in loss of friction therebetween.« less

  9. Electrolytic dissolver

    DOEpatents

    Wheelwright, E.J.; Fox, R.D.

    1975-08-26

    This patent related to an electrolytic dissolver wherein dissolution occurs by solution contact including a vessel of electrically insulative material, a fixed first electrode, a movable second electrode, means for insulating the electrodes from the material to be dissolved while permitting a free flow of electrolyte therebetween, means for passing a direct current between the electrodes and means for circulating electrolyte through the dissolver. (auth)

  10. Consortium for Nanomaterials for Aerospace Commerce and Technology (CONTACT)

    DTIC Science & Technology

    2013-02-01

    108 47 Absorption mechanism in tandem OPVs and absorption spectra of common organic materials...different protection mechanisms in the humid air of terrestrial environments and the dry vacuum of space. From these initial successes, a range of...confinement based materials enable the ability to manipulate and enhance the optical, electrical, thermal and noise mechanisms to optimize device

  11. Dual contact pogo pin assembly

    DOEpatents

    Hatch, Stephen McGarry

    2015-01-20

    A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

  12. Dual contact pogo pin assembly

    DOEpatents

    Hatch, Stephen McGarry

    2016-06-21

    A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

  13. Characterization of micro-contact resistance between a gold nanocrystalline line and a tungsten electrode probe in interconnect fatigue testing.

    PubMed

    Ling, Xue; Wang, Yusheng; Li, Xide

    2014-10-01

    An electromechanically-coupled micro-contact resistance measurement system is built to mimic the contact process during fatigue testing of nanoscale-thickness interconnects using multiple probe methods. The design combines an optical microscope, high-resolution electronic balance, and micromanipulator-controlled electric probe, and is coupled with electrical measurements to investigate microscale contact physics. Experimental measurements are performed to characterize the contact resistance response of the gold nanocrystalline pad of a 35-nm-thick interconnect under mechanical force applied by a tungsten electrode probe. Location of a stable region for the contact resistance and the critical contact force provides better understanding of micro-contact behavior relative to the effects of the contact force and the nature of the contact surface. Increasing contact temperature leads to reduced contact resistance, softens the pad material, and modifies the contact surface. The stability of both contact resistance and interconnect resistance is studied under increasing contact force. Major fluctuations emerge when the contact force is less than the critical contact force, which shows that temporal contact resistance will affect interconnect resistance measurement accuracy, even when using the four-wire method. This performance is demonstrated experimentally by heating the Au line locally with a laser beam. Finally, the contact resistances are calculated using the LET (Li-Etsion-Talke) model together with combined Holm and Sharvin theory under various contact forces. Good agreement between the results is obtained. This research provides a way to measure change in interconnect line resistance directly under a stable contact resistance regime with a two-wire method that will greatly reduce the experimental costs.

  14. Characterization of micro-contact resistance between a gold nanocrystalline line and a tungsten electrode probe in interconnect fatigue testing

    NASA Astrophysics Data System (ADS)

    Ling, Xue; Wang, Yusheng; Li, Xide

    2014-10-01

    An electromechanically-coupled micro-contact resistance measurement system is built to mimic the contact process during fatigue testing of nanoscale-thickness interconnects using multiple probe methods. The design combines an optical microscope, high-resolution electronic balance, and micromanipulator-controlled electric probe, and is coupled with electrical measurements to investigate microscale contact physics. Experimental measurements are performed to characterize the contact resistance response of the gold nanocrystalline pad of a 35-nm-thick interconnect under mechanical force applied by a tungsten electrode probe. Location of a stable region for the contact resistance and the critical contact force provides better understanding of micro-contact behavior relative to the effects of the contact force and the nature of the contact surface. Increasing contact temperature leads to reduced contact resistance, softens the pad material, and modifies the contact surface. The stability of both contact resistance and interconnect resistance is studied under increasing contact force. Major fluctuations emerge when the contact force is less than the critical contact force, which shows that temporal contact resistance will affect interconnect resistance measurement accuracy, even when using the four-wire method. This performance is demonstrated experimentally by heating the Au line locally with a laser beam. Finally, the contact resistances are calculated using the LET (Li-Etsion-Talke) model together with combined Holm and Sharvin theory under various contact forces. Good agreement between the results is obtained. This research provides a way to measure change in interconnect line resistance directly under a stable contact resistance regime with a two-wire method that will greatly reduce the experimental costs.

  15. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

    PubMed

    Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

    2015-11-06

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  16. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Severin, Erik (Inventor)

    1998-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  17. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Severin, Erik (Inventor); Lewis, Nathan S. (Inventor)

    2001-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  18. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Severin, Erik (Inventor)

    1999-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  19. Sensor arrays for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Freund, Michael S. (Inventor)

    1996-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g. electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  20. Solid oxide fuel cell having compound cross flow gas patterns

    DOEpatents

    Fraioli, A.V.

    1983-10-12

    A core construction for a fuel cell is disclosed having both parallel and cross flow passageways for the fuel and the oxidant gases. Each core passageway is defined by electrolyte and interconnect walls. Each electrolyte wall consists of cathode and anode materials sandwiching an electrolyte material. Each interconnect wall is formed as a sheet of inert support material having therein spaced small plugs of interconnect material, where cathode and anode materials are formed as layers on opposite sides of each sheet and are electrically connected together by the interconnect material plugs. Each interconnect wall in a wavy shape is connected along spaced generally parallel line-like contact areas between corresponding spaced pairs of generally parallel electrolyte walls, operable to define one tier of generally parallel flow passageways for the fuel and oxidant gases. Alternate tiers are arranged to have the passageways disposed normal to one another. Solid mechanical connection of the interconnect walls of adjacent tiers to the opposite sides of the common electrolyte wall therebetween is only at spaced point-like contact areas, 90 where the previously mentioned line-like contact areas cross one another.

  1. Solid oxide fuel cell having compound cross flow gas patterns

    DOEpatents

    Fraioli, Anthony V.

    1985-01-01

    A core construction for a fuel cell is disclosed having both parallel and cross flow passageways for the fuel and the oxidant gases. Each core passageway is defined by electrolyte and interconnect walls. Each electrolyte wall consists of cathode and anode materials sandwiching an electrolyte material. Each interconnect wall is formed as a sheet of inert support material having therein spaced small plugs of interconnect material, where cathode and anode materials are formed as layers on opposite sides of each sheet and are electrically connected together by the interconnect material plugs. Each interconnect wall in a wavy shape is connected along spaced generally parallel line-like contact areas between corresponding spaced pairs of generally parallel electrolyte walls, operable to define one tier of generally parallel flow passageways for the fuel and oxidant gases. Alternate tiers are arranged to have the passageways disposed normal to one another. Solid mechanical connection of the interconnect walls of adjacent tiers to the opposite sides of the common electrolyte wall therebetween is only at spaced point-like contact areas, 90 where the previously mentioned line-like contact areas cross one another.

  2. Automated brush plating process for solid oxide fuel cells

    DOEpatents

    Long, Jeffrey William

    2003-01-01

    A method of depositing a metal coating (28) on the interconnect (26) of a tubular, hollow fuel cell (10) contains the steps of providing the fuel cell (10) having an exposed interconnect surface (26); contacting the inside of the fuel cell (10) with a cathode (45) without use of any liquid materials; passing electrical current through a contacting applicator (46) which contains a metal electrolyte solution; passing the current from the applicator (46) to the cathode (45) and contacting the interconnect (26) with the applicator (46) and coating all of the exposed interconnect surface.

  3. Thermal conductor for high-energy electrochemical cells

    DOEpatents

    Hoffman, Joseph A.; Domroese, Michael K.; Lindeman, David D.; Radewald, Vern E.; Rouillard, Roger; Trice, Jennifer L.

    2000-01-01

    A thermal conductor for use with an electrochemical energy storage device is disclosed. The thermal conductor is attached to one or both of the anode and cathode contacts of an electrochemical cell. A resilient portion of the conductor varies in height or position to maintain contact between the conductor and an adjacent wall structure of a containment vessel in response to relative movement between the conductor and the wall structure. The thermal conductor conducts current into and out of the electrochemical cell and conducts thermal energy between the electrochemical cell and thermally conductive and electrically resistive material disposed between the conductor and the wall structure. The thermal conductor may be fabricated to include a resilient portion having one of a substantially C-shaped, double C-shaped, Z-shaped, V-shaped, O-shaped, S-shaped, or finger-shaped cross-section. An elastomeric spring element may be configured so as to be captured by the resilient conductor for purposes of enhancing the functionality of the thermal conductor. The spring element may include a protrusion that provides electrical insulation between the spring conductor and a spring conductor of an adjacently disposed electrochemical cell in the presence of relative movement between the cells and the wall structure. The thermal conductor may also be fabricated from a sheet of electrically conductive material and affixed to the contacts of a number of electrochemical cells.

  4. High throughput parallel backside contacting and periodic texturing for high-efficiency solar cells

    DOEpatents

    Daniel, Claus; Blue, Craig A.; Ott, Ronald D.

    2014-08-19

    Disclosed are configurations of long-range ordered features of solar cell materials, and methods for forming same. Some features include electrical access openings through a backing layer to a photovoltaic material in the solar cell. Some features include textured features disposed adjacent a surface of a solar cell material. Typically the long-range ordered features are formed by ablating the solar cell material with a laser interference pattern from at least two laser beams.

  5. Metallic Contact between MoS2 and Ni via Au Nanoglue.

    PubMed

    Shi, Xinying; Posysaev, Sergei; Huttula, Marko; Pankratov, Vladimir; Hoszowska, Joanna; Dousse, Jean-Claude; Zeeshan, Faisal; Niu, Yuran; Zakharov, Alexei; Li, Taohai; Miroshnichenko, Olga; Zhang, Meng; Wang, Xiao; Huang, Zhongjia; Saukko, Sami; González, Diego López; van Dijken, Sebastiaan; Alatalo, Matti; Cao, Wei

    2018-05-01

    A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS 2 matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS 2 crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS 2 complexes. The intrinsic semiconducting property of MoS 2 remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS 2 host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first-principles calculations. Following the system's band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor-metal heterojunctions enhance the photocatalytic ability. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Method of making MEA for PEM/SPE fuel cell

    DOEpatents

    Hulett, Jay S.

    2000-01-01

    A method of making a membrane-electrode-assembly (MEA) for a PEM/SPE fuel cell comprising applying a slurry of electrode-forming material directly onto a membrane-electrolyte film. The slurry comprises a liquid vehicle carrying catalyst particles and a binder for the catalyst particles. The membrane-electrolyte is preswollen by contact with the vehicle before the electrode-forming slurry is applied to the membrane-electrolyte. The swollen membrane-electrolyte is constrained against shrinking in the "x" and "y" directions during drying. Following assembly of the fuel cell, the MEA is rehydrated inside the fuel cell such that it swells in the "z" direction for enhanced electrical contact with contiguous electrically conductive components of the fuel cell.

  7. Acoustic wave device using plate modes with surface-parallel displacement

    DOEpatents

    Martin, Stephen J.; Ricco, Antonio J.

    1992-01-01

    Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.

  8. Acoustic wave device using plate modes with surface-parallel displacement

    DOEpatents

    Martin, S.J.; Ricco, A.J.

    1992-05-26

    Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes there between. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them. 6 figs.

  9. Acoustic wave device using plate modes with surface-parallel displacement

    DOEpatents

    Martin, S.J.; Ricco, A.J.

    1988-04-29

    Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them. 6 figs.

  10. Ultrastrong Graphene-Copper Core-Shell Wires for High-Performance Electrical Cables.

    PubMed

    Kim, Sang Jin; Shin, Dong Heon; Choi, Yong Seok; Rho, Hokyun; Park, Min; Moon, Byung Joon; Kim, Youngsoo; Lee, Seuoung-Ki; Lee, Dong Su; Kim, Tae-Wook; Lee, Sang Hyun; Kim, Keun Soo; Hong, Byung Hee; Bae, Sukang

    2018-03-27

    Recent development in mobile electronic devices and electric vehicles requires electrical wires with reduced weight as well as enhanced stability. In addition, since electric energy is mostly generated from power plants located far from its consuming places, mechanically stronger and higher electric power transmission cables are strongly demanded. However, there has been no alternative materials that can practically replace copper materials. Here, we report a method to prepare ultrastrong graphene fibers (GFs)-Cu core-shell wires with significantly enhanced electrical and mechanical properties. The core GFs are synthesized by chemical vapor deposition, followed by electroplating of Cu shells, where the large surface area of GFs in contact with Cu maximizes the mechanical toughness of the core-shell wires. At the same time, the unique electrical and thermal characteristics of graphene allow a ∼10 times higher current density limit, providing more efficient and reliable delivery of electrical energies through the GFs-Cu wires. We believe that our results would be useful to overcome the current limit in electrical wires and cables for lightweight, energy-saving, and high-power applications.

  11. Materials Test Program, Contact Power Collection for High Speed Tracked Vehicles

    DOT National Transportation Integrated Search

    1971-01-01

    A test program is defined for determining the failure modes and wear characteristics for brushes used to collect electrical power from the wayside for high speed tracked vehicles. Simulation of running conditions and the necessary instrumentation for...

  12. 46 CFR 111.05-1 - Purpose.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

  13. 46 CFR 111.05-1 - Purpose.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

  14. 46 CFR 111.05-1 - Purpose.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

  15. 46 CFR 111.05-1 - Purpose.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

  16. 46 CFR 111.05-1 - Purpose.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

  17. Compatibility Studies of Various Refractory Materials in Contact with Molten Silicon

    NASA Technical Reports Server (NTRS)

    Odonnell, T.; Leipold, M. H.; Hagan, M.

    1978-01-01

    The production of low cost, efficient solar cells for terrestrial electric power generation involves the manipulation of molten silicon with a present need for noncontaminating, high temperature refractories to be used as containment vessels, ribbon-production dies, and dip-coated substrates. Studies were conducted on the wetting behavior and chemical/physical interactions between molten silicon and various refractory materials.

  18. Electrodynamics of frictional interaction in tribolink “metal-polymer”

    NASA Astrophysics Data System (ADS)

    Volchenko, N. A.; Krasin, P. S.; Volchenko, A. I.; Zhuravlev, D. Yu

    2018-03-01

    The materials of the article illustrate the estimation of the energy loading of a metal friction element in the metal-electrolyte-polymer friction pair while forming various types of double electrical layers with the release of its thermal stabilization state. The energy loading of the contact spots of the microprotrusions of the friction pairs of braking devices depends to a large extent on the electrical, thermal and chemical fields that are of a different nature to an allowable temperature and are above the surface layers of the polymer patch. The latter is significantly influenced by double electrical layers that are formed at the boundaries of the phases “metal-metal”, “metal-polymer”, “metal-semiconductor”, “semiconductor-semiconductor” and “metal-electrolyte”. When two electrically conducting phases come into contact with electrothermomechanical friction, a difference in electrical potentials arises, which is due to the formation of a double electric layer, that is an asymmetric distribution of charged particles near the phase boundary. The structure of the double electric layer does not matter for the magnitude of the reversible electrode potential, which is determined by the variation of the isobaric-isothermal potential of the corresponding electrochemical reaction.

  19. An electric-eel-inspired soft power source from stacked hydrogels.

    PubMed

    Schroeder, Thomas B H; Guha, Anirvan; Lamoureux, Aaron; VanRenterghem, Gloria; Sept, David; Shtein, Max; Yang, Jerry; Mayer, Michael

    2017-12-13

    Progress towards the integration of technology into living organisms requires electrical power sources that are biocompatible, mechanically flexible, and able to harness the chemical energy available inside biological systems. Conventional batteries were not designed with these criteria in mind. The electric organ of the knifefish Electrophorus electricus (commonly known as the electric eel) is, however, an example of an electrical power source that operates within biological constraints while featuring power characteristics that include peak potential differences of 600 volts and currents of 1 ampere. Here we introduce an electric-eel-inspired power concept that uses gradients of ions between miniature polyacrylamide hydrogel compartments bounded by a repeating sequence of cation- and anion-selective hydrogel membranes. The system uses a scalable stacking or folding geometry that generates 110 volts at open circuit or 27 milliwatts per square metre per gel cell upon simultaneous, self-registered mechanical contact activation of thousands of gel compartments in series while circumventing power dissipation before contact. Unlike typical batteries, these systems are soft, flexible, transparent, and potentially biocompatible. These characteristics suggest that artificial electric organs could be used to power next-generation implant materials such as pacemakers, implantable sensors, or prosthetic devices in hybrids of living and non-living systems.

  20. An electric-eel-inspired soft power source from stacked hydrogels

    NASA Astrophysics Data System (ADS)

    Schroeder, Thomas B. H.; Guha, Anirvan; Lamoureux, Aaron; Vanrenterghem, Gloria; Sept, David; Shtein, Max; Yang, Jerry; Mayer, Michael

    2017-12-01

    Progress towards the integration of technology into living organisms requires electrical power sources that are biocompatible, mechanically flexible, and able to harness the chemical energy available inside biological systems. Conventional batteries were not designed with these criteria in mind. The electric organ of the knifefish Electrophorus electricus (commonly known as the electric eel) is, however, an example of an electrical power source that operates within biological constraints while featuring power characteristics that include peak potential differences of 600 volts and currents of 1 ampere. Here we introduce an electric-eel-inspired power concept that uses gradients of ions between miniature polyacrylamide hydrogel compartments bounded by a repeating sequence of cation- and anion-selective hydrogel membranes. The system uses a scalable stacking or folding geometry that generates 110 volts at open circuit or 27 milliwatts per square metre per gel cell upon simultaneous, self-registered mechanical contact activation of thousands of gel compartments in series while circumventing power dissipation before contact. Unlike typical batteries, these systems are soft, flexible, transparent, and potentially biocompatible. These characteristics suggest that artificial electric organs could be used to power next-generation implant materials such as pacemakers, implantable sensors, or prosthetic devices in hybrids of living and non-living systems.

  1. Gold-based thin multilayers for ohmic contacts in RF-MEMS switches

    NASA Astrophysics Data System (ADS)

    Mulloni, V.; Iannacci, J.; Bartali, R.; Micheli, V.; Colpo, S.; Laidani, N.; Margesin, B.

    2011-06-01

    In RF-MEMS switches many reliability issues are related to the metal contacts in the switching area. The characteristics of this contact influence not only contact resistance and insertion loss, but also the most relevant switch failure mechanisms that are wear of ohmic contact, adhesion and stiction. Gold is widely used for this purpose because of its good conductivity and chemical inertness, but is a soft metal, and the development of hard contact materials with low resistivity is of great interest for RF-MEMS switch reliability. It is possible to increase the contact hardness preserving the convenient gold properties alternating gold layers with thin layers of different metals. The material becomes harder not only by simple alloying but also by the presence of interfaces which act as barriers for mechanical dislocation migration. A detailed study of mechanical, electrical and morphological properties of gold-chromium, gold-platinum and gold-palladium multilayers is presented and discussed. It is found that the annealing treatments are important for tuning hardness values, and a careful choice of the alloying metal is essential when the material is inserted in a real switch fabrication cycle, because hardness improvements can vanish during oxygen plasma treatments usually involved in RF-switches fabrication. Platinum is the only metal tested that is unaffected by oxidation, and also modifies the chromium adhesion layer diffusion on the contact surface.

  2. Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

    NASA Astrophysics Data System (ADS)

    Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

    2018-04-01

    Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

  3. Experimental investigation on the electrical contact behavior of rolling contact connector.

    PubMed

    Chen, Junxing; Yang, Fei; Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe

    2015-12-01

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

  4. Pleated metal bipolar assembly

    DOEpatents

    Wilson, Mahlon S.; Zawodzinski, Christine

    2001-01-01

    A thin low-cost bipolar plate for an electrochemical cell is formed from a polymer support plate with first flow channels on a first side of the support plate and second flow channels on a second side of the support plate, where the first flow channels and second flow channels have intersecting locations and have a depth effective to form openings through the support plate at the intersecting locations. A first foil of electrically conductive material is pressed into the first flow channels. A second foil of electrically conductive material pressed into the second flow channels so that electrical contact is made between the first and second foils at the openings through the support plate. A particular application of the bipolar plate is in polymer electrolyte fuel cells.

  5. Characterization of micro-contact resistance between a gold nanocrystalline line and a tungsten electrode probe in interconnect fatigue testing

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ling, Xue; Wang, Yusheng; Li, Xide, E-mail: lixide@tsinghua.edu.cn

    An electromechanically-coupled micro-contact resistance measurement system is built to mimic the contact process during fatigue testing of nanoscale-thickness interconnects using multiple probe methods. The design combines an optical microscope, high-resolution electronic balance, and micromanipulator-controlled electric probe, and is coupled with electrical measurements to investigate microscale contact physics. Experimental measurements are performed to characterize the contact resistance response of the gold nanocrystalline pad of a 35-nm-thick interconnect under mechanical force applied by a tungsten electrode probe. Location of a stable region for the contact resistance and the critical contact force provides better understanding of micro-contact behavior relative to the effects ofmore » the contact force and the nature of the contact surface. Increasing contact temperature leads to reduced contact resistance, softens the pad material, and modifies the contact surface. The stability of both contact resistance and interconnect resistance is studied under increasing contact force. Major fluctuations emerge when the contact force is less than the critical contact force, which shows that temporal contact resistance will affect interconnect resistance measurement accuracy, even when using the four-wire method. This performance is demonstrated experimentally by heating the Au line locally with a laser beam. Finally, the contact resistances are calculated using the LET (Li–Etsion–Talke) model together with combined Holm and Sharvin theory under various contact forces. Good agreement between the results is obtained. This research provides a way to measure change in interconnect line resistance directly under a stable contact resistance regime with a two-wire method that will greatly reduce the experimental costs.« less

  6. Electro-migration of impurities in TlBr

    NASA Astrophysics Data System (ADS)

    Kim, Ki Hyun; Kim, Eunlim; Kim, H.; Tappero, R.; Bolotnikov, A. E.; Camarda, G. S.; Hossain, A.; Cirignano, L.; James, R. B.

    2013-10-01

    We observed the electro-migration of Cu, Ag, and Au impurities that exist in positive-ion states in TlBr detectors under electric field strengths typically used for device operation. The migration occurred predominantly through bulk- and specific-channels, which are presumed to be a network of grain and sub-grain boundaries. The electro-migration velocity of Cu, Ag, and Au in TlBr is about 4-8 × 10-8 cm/s at room temperature under an electric field of 500-800 V/mm. The instability and polarization effects of TlBr detectors might well be correlated with the electro-migration of residual impurities in TlBr, which alters the internal electric field over time. The effect may also have been due to migration of the electrode material itself, which would allow for the possibility of a better choice for contact material and for depositing an effective diffusion barrier. From our findings, we suggest that applying our electro-migration technique for purifying material is a promising new way to remove electrically active metallic impurities in TlBr crystals, as well as other materials.

  7. Electrode Models for Electric Current Computed Tomography

    PubMed Central

    CHENG, KUO-SHENG; ISAACSON, DAVID; NEWELL, J. C.; GISSER, DAVID G.

    2016-01-01

    This paper develops a mathematical model for the physical properties of electrodes suitable for use in electric current computed tomography (ECCT). The model includes the effects of discretization, shunt, and contact impedance. The complete model was validated by experiment. Bath resistivities of 284.0, 139.7, 62.3, 29.5 Ω · cm were studied. Values of “effective” contact impedance z used in the numerical approximations were 58.0, 35.0, 15.0, and 7.5 Ω · cm2, respectively. Agreement between the calculated and experimentally measured values was excellent throughout the range of bath conductivities studied. It is desirable in electrical impedance imaging systems to model the observed voltages to the same precision as they are measured in order to be able to make the highest resolution reconstructions of the internal conductivity that the measurement precision allows. The complete electrode model, which includes the effects of discretization of the current pattern, the shunt effect due to the highly conductive electrode material, and the effect of an “effective” contact impedance, allows calculation of the voltages due to any current pattern applied to a homogeneous resistivity field. PMID:2777280

  8. Electrode models for electric current computed tomography.

    PubMed

    Cheng, K S; Isaacson, D; Newell, J C; Gisser, D G

    1989-09-01

    This paper develops a mathematical model for the physical properties of electrodes suitable for use in electric current computed tomography (ECCT). The model includes the effects of discretization, shunt, and contact impedance. The complete model was validated by experiment. Bath resistivities of 284.0, 139.7, 62.3, 29.5 omega.cm were studied. Values of "effective" contact impedance zeta used in the numerical approximations were 58.0, 35.0, 15.0, and 7.5 omega.cm2, respectively. Agreement between the calculated and experimentally measured values was excellent throughout the range of bath conductivities studied. It is desirable in electrical impedance imaging systems to model the observed voltages to the same precision as they are measured in order to be able to make the highest resolution reconstructions of the internal conductivity that the measurement precision allows. The complete electrode model, which includes the effects of discretization of the current pattern, the shunt effect due to the highly conductive electrode material, and the effect of an "effective" contact impedance, allows calculation of the voltages due to any current pattern applied to a homogeneous resistivity field.

  9. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOEpatents

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  10. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOEpatents

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  11. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

    PubMed Central

    Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

    2017-01-01

    Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

  12. ACCELERATION INTEGRATING MEANS

    DOEpatents

    Wilkes, D.F.

    1961-08-29

    An acceleration responsive device is described. A housing has at one end normally open electrical contacts and contains a piston system with a first part of non-magnetic material having metering orifices in the side walls for forming an air bearing between it and the walls of the housing; this first piston part is normally held against the other end of the housing from the noted contacts by a second piston or reset part. The reset part is of partly magnetic material, is separable from the flrst piston part, and is positioned within the housing intermediate the contacts and the first piston part. A magnet carried by the housing imposes a retaining force upon the reset part, along with a helical compression spring that is between the reset part and the end with the contacts. When a predetermined acceleration level is attained, the reset part overcomes the bias or retaining force provided by the magnet and the spring'' snaps'' into a depression in the housing adjacent the contacts. The first piston part is then free to move toward the contacts with its movement responsive tc acceleration forces and the metering orifices. (AEC)

  13. Laser method for forming low-resistance ohmic contacts on semiconducting oxides

    DOEpatents

    Narayan, Jagdish

    1981-01-01

    This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

  14. Method for forming low-resistance ohmic contacts on semiconducting oxides

    DOEpatents

    Narayan, J.

    1979-10-01

    The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

  15. High photoresponse of individual WS2 nanowire-nanoflake hybrid materials

    NASA Astrophysics Data System (ADS)

    Asres, Georgies Alene; Järvinen, Topias; Lorite, Gabriela S.; Mohl, Melinda; Pitkänen, Olli; Dombovari, Aron; Tóth, Geza; Spetz, Anita Lloyd; Vajtai, Robert; Ajayan, Pulickel M.; Lei, Sidong; Talapatra, Saikat; Kordas, Krisztian

    2018-06-01

    van der Waals solids have been recognized as highly photosensitive materials that compete conventional Si and compound semiconductor based devices. While 2-dimensional nanosheets of single and multiple layers and 1-dimensional nanowires of molybdenum and tungsten chalcogenides have been studied, their nanostructured derivatives with complex morphologies are not explored yet. Here, we report on the electrical and photosensitive properties of WS2 nanowire-nanoflake hybrid materials we developed lately. We probe individual hybrid nanostructured particles along the structure using focused ion beam deposited Pt contacts. Further, we use conductive atomic force microscopy to analyze electrical behavior across the nanostructure in the transverse direction. The electrical measurements are complemented by in situ laser beam illumination to explore the photoresponse of the nanohybrids in the visible optical spectrum. Photodetectors with responsivity up to ˜0.4 AW-1 are demonstrated outperforming graphene as well as most of the other transition metal dichalcogenide based devices.

  16. Physical Explanation of Archie's Porosity Exponent in Granular Materials: A Process-Based, Pore-Scale Numerical Study

    NASA Astrophysics Data System (ADS)

    Niu, Qifei; Zhang, Chi

    2018-02-01

    The empirical Archie's law has been widely used in geosciences and engineering to explain the measured electrical resistivity of many geological materials, but its physical basis has not been fully understood yet. In this study, we use a pore-scale numerical approach combining discrete element-finite difference methods to study Archie's porosity exponent m of granular materials over a wide porosity range. Numerical results reveal that at dilute states (e.g., porosity ϕ > 65%), m is exclusively related to the particle shape and orientation. As the porosity decreases, the electric flow in pore space concentrates progressively near particle contacts and m increases continuously in response to the intensified nonuniformity of the local electrical field. It is also found that the increase in m is universally correlated with the volume fraction of pore throats for all the samples regardless of their particle shapes, particle size range, and porosities.

  17. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-10-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  18. Modified Gold Electrode and Hollow Mn3O4 Nanoparticles as Electrode Materials for Microbial Fuel Cell Applications

    NASA Astrophysics Data System (ADS)

    Dhungana, Pramod

    Microbial fuel cell (MFC) technology has attracted great attention in the scientific community as it offers the possibility of extraction of electricity from wide range of soluble and dissolved organic waste or renewable biomass, including sludge, waste water and cellulosic biomass. Microbial fuel cells are devices that utilize microbial metabolic processes to convert chemical energy via the oxidation of organic substances to produce electric current. MFCs consist of two chambers, an anode and cathode, separated by ion-permeable materials. The efficiency of producing electricity using the MFC depends on several factors such as immobilization of microorganisms on anode, mode of electron transfer, types of substrate/fuel and effectiveness of cathode materials for oxygen reduction reaction (ORR). In this work, in order to immobilize the microorganisms on anode materials, we have investigated the surface modification of gold electrode (anode) using alkyl dithiol and aryl thiol with glucose. The modification processes were characterized by using contact angle measurements and proton nuclear magnetic resonance (NMR). In order to study the effectiveness of cathode materials for ORR, we have synthesized hollow Mn3O 4 nanoparticles which are electrically very poor. Therefore, the hollow nanoparticles were mixed with electrically conductive multi-walled carbon nanotube as support and optimized the mixing process. This composite material shows enhanced ORR activity in all types of pH conditions. In future, we will focus to integrate anode and cathode in MFC to check its efficiency to produce electricity.

  19. Evaluation of the electrical contact area in contact-mode scanning probe microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Celano, Umberto, E-mail: celano@imec.be, E-mail: u.celano@gmail.com; Chintala, Ravi Chandra; Vandervorst, Wilfried

    The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the effective electrical contact area, which exists between tip and sample in contact-AFM electrical measurements. A simple procedure for the evaluation of the effective electrical contact area is described using conductive atomic force microscopy (C-AFM) in combination with a thin dielectric. We characterize the electrical contact area for coated metal and doped-diamond tips operated at low force (<200 nN) in contact mode. In both cases, we observe that only a small fraction (<10 nm{sup 2}) of the physical contact (∼100 nm{sup 2}) is effectively contributing to the transportmore » phenomena. Assuming this reduced area is confined to the central area of the physical contact, these results explain the sub-10 nm electrical resolution observed in C-AFM measurements.« less

  20. Mass analysis of neutral particles and ions released during electrical breakdowns on spacecraft surfaces

    NASA Technical Reports Server (NTRS)

    Kendall, B. R. F.

    1985-01-01

    Charged-particle fluxes from breakdown events were studied. Methods to measure mass spectra and total emitted flux of neutral particles were developed. The design and construction of the specialized mass spectrometer was completed. Electrical breakdowns were initiated by a movable blunt contact touching the insulating surface. The contact discharge apparatus was used for final development of two different high-speed recording systems and for measurements of the composition of the materials given off by the discharge. It was shown that intense instantaneous fluxes of neutral particles were released from the sites of electrical breakdown events. A laser micropulse mass analyzer showed that visible discoloration at breakdown sites were correllated with the presence of iron on the polymer side of the film, presumably caused by punch-through to the Inconel backing. Kapton samples irradiated by an oxygen ion beam were tested. The irradiated samples were free of surface hydrocarbon contamination but otherwise behaved in the same way as the Kapton samples tested earlier. Only the two samples exposed to oxygen ion bombardment were relatively clean. This indicates an additional variable that should be considered when testing spacecraft materials in the laboratory.

  1. Cation-Dependent Intrinsic Electrical Conductivity in Isostructural Tetrathiafulvalene-Based Microporous Metal–Organic Frameworks

    DOE PAGES

    Park, Sarah S.; Hontz, Eric R.; Sun, Lei; ...

    2015-01-26

    Isostructural metal-organic frameworks (MOFs) M 2(TTFTB) (M = Mn, Co, Zn, and Cd; H4TTFTB = tetrathiafulvalene tetrabenzoate) exhibit a striking correlation between their single-crystal conductivities and the shortest S···S interaction defined by neighboring TTF cores, which inversely correlates with the ionic radius of the metal ions. The larger cations cause a pinching of the S···S contact, which is responsible for better orbital overlap between p z orbitals on neighboring S and C atoms. Density functional theory calculations show that these orbitals are critically involved in the valence band of these materials, such that modulation of the S···S distance has anmore » important effect on band dispersion and, implicitly, on the conductivity. The Cd analogue, with the largest cation and shortest S···S contact, shows the largest electrical conductivity, σ = 2.86 (±0.53) × 10 -4 S/cm, which is also among the highest in microporous MOFs. These results describe the first demonstration of tunable intrinsic electrical conductivity in this class of materials and serve as a blueprint for controlling charge transport in MOFs with π-stacked motifs.« less

  2. Systemic allergic contact dermatitis to fiberglass in a factory worker of wind turbine blades.

    PubMed

    Nogueira, Ana; Morais, Paulo; Cunha, Ana Paula; Azevedo, Filomena

    2011-09-01

    Fiberglass is extensively used due to its properties of thermal, acoustic and electrical insulation, and also to reinforce other materials such as plastics. Irritant contact dermatitis to fiberglass is a well established occupational dermatose and is due to penetration of small fragments in the cornified layer of the skin. On the other hand, allergic contact dermatitis (ACD) is rare and is more often triggered by sensitivity to the additives and resins used in the manufacture of fiberglass products. We report a case of ACD to fiberglass in a factory worker of fiberglass reinforced products.

  3. Breaking the electrical barrier between copper and carbon nanotubes.

    PubMed

    Milowska, Karolina Z; Ghorbani-Asl, Mahdi; Burda, Marek; Wolanicka, Lidia; Ćatić, Nordin; Bristowe, Paul D; Koziol, Krzysztof K K

    2017-06-22

    Improving the interface between copper and carbon nanotubes (CNTs) offers a straightforward strategy for the effective manufacturing and utilisation of Cu-CNT composite material that could be used in various industries including microelectronics, aerospace and transportation. Motivated by a combination of structural and electrical measurements on Cu-M-CNT bimetal systems (M = Ni, Cr) we show, using first principles calculations, that the conductance of this composite can exceed that of a pure Cu-CNT system and that the current density can even reach 10 11 A cm -2 . The results show that the proper choice of alloying element (M) and type of contact facilitate the fabrication of ultra-conductive Cu-M-CNT systems by creating a favourable interface geometry, increasing the interface electronic density of states and reducing the contact resistance. In particular, a small concentration of Ni between the Cu matrix and the CNT using either an "end contact" and or a "dot contact" can significantly improve the electrical performance of the composite. Furthermore the predicted conductance of Ni-doped Cu-CNT "carpets" exceeds that of an undoped system by ∼200%. Cr is shown to improve CNT integration and composite conductance over a wide temperature range while Al, at low voltages, can enhance the conductance beyond that of Cr.

  4. Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

    DTIC Science & Technology

    1982-05-01

    semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

  5. Battery structures, self-organizing structures, and related methods

    DOEpatents

    Chiang, Yet-Ming; Moorehead, William Douglas

    2013-11-19

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling forve on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionicaily conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  6. Battery Structures, self-organizing structures, and related methods

    DOEpatents

    Chiang, Yet-Ming; Moorehead, William Douglas

    2013-11-12

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling force on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionically conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  7. Battery structures, self-organizing structures and related methods

    DOEpatents

    Chiang, Yet-Ming [Framingham, MA; Moorehead, William Douglas [Virginia Beach, VA

    2012-06-26

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling force on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionically conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  8. Methods for forming small-volume electrical contacts and material manipulations with fluid microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-12-27

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  9. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-04-26

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microehannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  10. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-03-22

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  11. Battery structures, self-organizing structures and related methods

    DOEpatents

    Chiang, Yet Ming [Framingham, MA; Moorehead, William Douglas [Virginia Beach, VA; Gozdz, Antoni S [Marlborough, MA; Holman, Richard K [Belmont, MA; Loxley, Andrew [Somerville, MA; Riley, Jr., Gilbert N.; Viola, Michael S [Burlington, MA

    2009-08-25

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling force on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionically conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  12. Battery structures, self-organizing structures and related methods

    DOEpatents

    Chiang, Yet-Ming [Framingham, MA; Moorehead, William D [Virginia Beach, VA; Gozdz, Antoni S [Marlborough, MA; Holman, Richard K [Belmont, MA; Loxley, Andrew L [Roslindale, MA; Riley, Jr., Gilbert N.; Viola, Michael S [Burlington, MA

    2012-05-01

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling force on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionically conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  13. Battery structures, self-organizing structures and related methods

    DOEpatents

    Chiang, Yet-Ming [Framingham, MA; Moorehead, William D [Virginia Beach, VA; Gozdz, Antoni S [Marlborough, MA; Holman, Richard K [Belmont, MA; Loxley, Andrew L [Roslindale, MA; Riley, Jr., Gilbert N.; Viola, Michael S [Burlington, MA

    2011-08-02

    An energy storage device includes a first electrode comprising a first material and a second electrode comprising a second material, at least a portion of the first and second materials forming an interpenetrating network when dispersed in an electrolyte, the electrolyte, the first material and the second material are selected so that the first and second materials exert a repelling force on each other when combined. An electrochemical device, includes a first electrode in electrical communication with a first current collector; a second electrode in electrical communication with a second current collector; and an ionically conductive medium in ionic contact with said first and second electrodes, wherein at least a portion of the first and second electrodes form an interpenetrating network and wherein at least one of the first and second electrodes comprises an electrode structure providing two or more pathways to its current collector.

  14. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C.; Ramsey, J. Michael

    2007-11-20

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  15. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C.; Ramsey, J. Michael; Culbertson, Christopher T.; Whitten, William B.; Foote, Robert S.

    2004-02-03

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  16. Electrostatic Discharge Training Manual

    DTIC Science & Technology

    1980-09-01

    CAN BE MOLDED INTO FORMED SHAPES. FIBERBOARD, MELAMINE LAMINATES AND OTHER MATERIALS (LAMINATED OR HOMOGENEOUS) CAN BE CONSTRUCTED INTO BOXES AND...COVERED WITH, ESD PROTECTIVE MATERIALS SUCH AS METAL, MIL-B-81705 TYPE II, MIL-P- 82646 (REFERENCES 17, 16), MELAMINE LAMINATES OR OTHER ESD PROTECTIVE...CONDUCTANCE IN AVALANCHE MICROWAVE OSCILLATORS", IEEE TRANSACTIONS ON ELECTRON DEVICES, ED-i5, JUNE 1968. 32. HOLM, R., ELECTRIC CONTACTS HANDBOOK, BERLIN

  17. Effect of mechanical and electrical stimuli in conductive atomic force microscopy with noble metal-coated tips

    NASA Astrophysics Data System (ADS)

    Zade, Vishal; Kang, Hung-Sen; Lee, Min Hwan

    2018-01-01

    Conductive atomic force microscopy has been widely employed to study the localized electrical properties of a wide range of substrates in non-vacuum conditions by the use of noble metal-coated tips. However, quantitative characterization of the electrical properties was often precluded by unpredictable changes in the tip apex morphology, and/or electronic transport characteristics of undesired oxide overcoats on the tip. In this paper, the impact of mechanical and electrical stimuli on the apex geometry of gold coated tips and electrical conduction properties at the tip-substrate contact is discussed by choosing gold and highly ordered pyrolytic graphite as the representative tip and substrate materials, respectively.

  18. Thermal and electrical contact conductance studies

    NASA Technical Reports Server (NTRS)

    Vansciver, S. W.; Nilles, M.

    1985-01-01

    Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

  19. Laser modification of macroscopic properties of metal surface layer

    NASA Astrophysics Data System (ADS)

    Kostrubiec, Franciszek

    1995-03-01

    Surface laser treatment of metals comprises a number of diversified technological operations out of which the following can be considered the most common: oxidation and rendering surfaces amorphous, surface hardening of steel, modification of selected physical properties of metal surface layers. In the paper basic results of laser treatment of a group of metals used as base materials for electric contacts have been presented. The aim of the study was to test the usability of laser treatment from the viewpoint of requirements imposed on materials for electric contacts. The results presented in the paper refer to two different surface treatment technologies: (1) modification of infusible metal surface layer: tungsten and molybdenum through laser fusing of their surface layer and its crystallization, and (2) modification of surface layer properties of other metals through laser doping of their surface layer with foreign elements. In the paper a number of results of experimental investigations obtained by the team under the author's supervision are presented.

  20. Fluid cooled electrical assembly

    DOEpatents

    Rinehart, Lawrence E.; Romero, Guillermo L.

    2007-02-06

    A heat producing, fluid cooled assembly that includes a housing made of liquid-impermeable material, which defines a fluid inlet and a fluid outlet and an opening. Also included is an electrical package having a set of semiconductor electrical devices supported on a substrate and the second major surface is a heat sink adapted to express heat generated from the electrical apparatus and wherein the second major surface defines a rim that is fit to the opening. Further, the housing is constructed so that as fluid travels from the fluid inlet to the fluid outlet it is constrained to flow past the opening thereby placing the fluid in contact with the heat sink.

  1. Wire electric-discharge machining and other fabrication techniques

    NASA Technical Reports Server (NTRS)

    Morgan, W. H.

    1983-01-01

    Wire electric discharge machining and extrude honing were used to fabricate a two dimensional wing for cryogenic wind tunnel testing. Electric-discharge cutting is done with a moving wire electrode. The cut track is controlled by means of a punched-tape program and the cutting feed is regulated according to the progress of the work. Electric-discharge machining involves no contact with the work piece, and no mechanical force is exerted. Extrude hone is a process for honing finish-machined surfaces by the extrusion of an abrasive material (silly putty), which is forced through a restrictive fixture. The fabrication steps are described and production times are given.

  2. Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rockett, Angus; Marsillac, Sylvain; Collins, Robert

    This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe 2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS 2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in sevenmore » journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS 2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in CdTe devices. We demonstrated the conduction mechanism by which CdTe polycrystals improve the performance of the devices relative to single crystal devices. The mechanism shows that grain boundaries are conduction pathways for photogenerated electrons and that the corresponding holes are confined to the grains and therefore do not contribute to recombination.« less

  3. Thermal sprayed composite melt containment tubular component and method of making same

    DOEpatents

    Besser, Matthew F.; Terpstra, Robert L.; Sordelet, Daniel J.; Anderson, Iver E.

    2002-03-19

    A tubular thermal sprayed melt containment component for transient containment of molten metal or alloy wherein the tubular member includes a thermal sprayed inner melt-contacting layer for contacting molten metal or alloy to be processed, a thermal sprayed heat-generating layer deposited on the inner layer, and an optional thermal sprayed outer thermal insulating layer. The thermal sprayed heat-generating layer is inductively heated as a susceptor of an induction field or electrical resistively heated by passing electrical current therethrough. The tubular thermal sprayed melt containment component can comprise an elongated melt pour tube of a gas atomization apparatus where the melt pour tube supplies molten material from a crucible to an underlying melt atomization nozzle.

  4. Fast chirality reversal of the magnetic vortex by electric current

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lim, W. L., E-mail: wlimnd@gmail.com; Liu, R. H.; Urazhdin, S., E-mail: sergei.urazhdin@emory.edu

    2014-12-01

    The possibility of high-density information encoding in magnetic materials by topologically stable inhomogeneous magnetization configurations such as domain walls, skyrmions, and vortices has motivated intense research into mechanisms enabling their control and detection. While the uniform magnetization states can be efficiently controlled by electric current using magnetic multilayer structures, this approach has proven much more difficult to implement for inhomogeneous states. Here, we report direct observation of fast reversal of magnetic vortex by electric current in a simple planar structure based on a bilayer of spin Hall material Pt with a single microscopic ferromagnetic disk contacted by asymmetric electrodes. Themore » reversal is enabled by a combination of the chiral Oersted field and spin current generated by the nonuniform current distribution in Pt. Our results provide a route for the efficient control of inhomogeneous magnetization configurations by electric current.« less

  5. Self bleaching photoelectrochemical-electrochromic device

    DOEpatents

    Bechinger, Clemens S.; Gregg, Brian A.

    2002-04-09

    A photoelectrochemical-electrochromic device comprising a first transparent electrode and a second transparent electrode in parallel, spaced relation to each other. The first transparent electrode is electrically connected to the second transparent electrode. An electrochromic material is applied to the first transparent electrode and a nanoporous semiconductor film having a dye adsorbed therein is applied to the second transparent electrode. An electrolyte layer contacts the electrochromic material and the nanoporous semiconductor film. The electrolyte layer has a redox couple whereby upon application of light, the nanoporous semiconductor layer dye absorbs the light and the redox couple oxidizes producing an electric field across the device modulating the effective light transmittance through the device.

  6. High-throughput screening for combinatorial thin-film library of thermoelectric materials.

    PubMed

    Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

    2008-01-01

    A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

  7. Electrical response of liquid crystal cells doped with multi-walled carbon nanotubes.

    PubMed

    García-García, Amanda; Vergaz, Ricardo; Algorri, José Francisco; Quintana, Xabier; Otón, José Manuel

    2015-01-01

    The inclusion of nanoparticles modifies a number of fundamental properties of many materials. Doping of nanoparticles in self-organized materials such as liquid crystals may be of interest for the reciprocal interaction between the matrix and the nanoparticles. Elongated nanoparticles and nanotubes can be aligned and reoriented by the liquid crystal, inducing noticeable changes in their optical and electrical properties. In this work, cells of liquid crystal doped with high aspect ratio multi-walled carbon nanotubes have been prepared, and their characteristic impedance has been studied at different frequencies and excitation voltages. The results demonstrate alterations in the anisotropic conductivity of the samples with the applied electric field, which can be followed by monitoring the impedance evolution with the excitation voltage. Results are consistent with a possible electric contact between the coated substrates of the LC cell caused by the reorientation of the nanotubes. The reversibility of the doped system upon removal of the electric field is quite low.

  8. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  9. Method of Fabricating a Piezoelectric Composite Apparatus

    NASA Technical Reports Server (NTRS)

    Wilkie, W. Keats (Inventor); Bryant, Robert (Inventor); Fox, Robert L. (Inventor); Hellbaum, Richard F. (Inventor); High, James W. (Inventor); Jalink, Antony, Jr. (Inventor); Little, Bruce D. (Inventor); Mirick, Paul H. (Inventor)

    2003-01-01

    A method for fabricating a piezoelectric macro-fiber composite actuator comprises providing a piezoelectric material that has two sides and attaching one side upon an adhesive backing sheet. The method further comprises slicing the piezoelectric material to provide a plurality of piezoelectric fibers in juxtaposition. A conductive film is then adhesively bonded to the other side of the piezoelectric material, and the adhesive backing sheet is removed. The conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric material. The first and second conductive patterns of the conductive film each have a plurality of electrodes to form a pattern of interdigitated electrodes. A second film is then bonded to the other side of the piezoelectric material. The second film may have a pair of conductive patterns similar to the conductive patterns of the first film.

  10. Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement

    NASA Technical Reports Server (NTRS)

    Burger, Dale R. (Inventor)

    1986-01-01

    A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.

  11. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOEpatents

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  12. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  13. Apparatus and method for two-stage oxidation of wastes

    DOEpatents

    Fleischman, Scott D.

    1995-01-01

    An apparatus and method for oxidizing wastes in a two-stage process. The apparatus includes an oxidation device, a gas-liquid contacting column and an electrocell. In the first stage of the process, wastes are heated in the presence of air to partially oxidize the wastes. The heated wastes produce an off-gas stream containing oxidizable materials. In the second stage, the off-gas stream is cooled and flowed through the contacting column, where the off-gas stream is contacted with an aqueous acid stream containing an oxidizing agent having at least two positive valence states. At least a portion of the oxidizable materials are transferred to the acid stream and destroyed by the oxidizing agent. During oxidation, the valence of the oxidizing agent is decreased from its higher state to its lower state. The acid stream is flowed to the electrocell, where an electric current is applied to the stream to restore the oxidizing agent to its higher valence state. The regenerated acid stream is recycled to the contacting column.

  14. Characterization of CdTe and (CdZn)Te detectors with different metal contacts

    NASA Astrophysics Data System (ADS)

    Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

    2013-09-01

    In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

  15. Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

    NASA Astrophysics Data System (ADS)

    Tremper, Amber Leigh

    This thesis examines how the electrical and mechanical behavior of Au thin films is altered by the presence of ultra-thin metallic coatings. To examine the mechanical behavior, nanoindentation, nano-scratch, and atomic force microscopy (AFM) testing was performed. The electrical behavior was evaluated through Kelvin probe contact resistance measurements. This thesis shows that ultra-thin, hard, ductile coatings on a softer, ductile underlying layer (such as Ru or Pt on Au) had a significant effect on mechanical behavior of the system, and can be tailored to control the deformation resistance of the thin film system. Despite Ru and Pt having a higher hardness and plane strain modulus than Au, the Ru and Pt coatings decreased both the hardness and plane strain modulus of the layered system when the indentation depth was on the order of the coating thickness. Alternately, when the indentation depth was several times the coating thickness, the ductile, plastically hard, elastically stiff layer significantly hardened the contact response. These results correlate well with membrane stress theoretical predictions, and demonstrate that membrane theory can be applied even when the ratio of indentation depth, h, to coating thickness, t, is very large ( h/t<10). The transition from film-substrate models to membrane models occurs when the indent penetration depth to coating thickness ratio is less than ˜0.5. When the electrical behavior of the Ru-coated Au films was examined, it was found that all the measured resistances of the Au-only film and Ru-coated systems were several orders of magnitude larger than those predicted by Holm's law, but were still in good agreement with previously reported values in the literature. Previous studies attributed the high contact resistances to a variety of causes, including the buildup of an insulating contamination layer. This thesis determined the cause of the deviations to be large sheet resistance contributions to the total measured resistance. Further, studies on aged samples (with thicker contamination layers) conclusively showed that, while contamination increases the contact resistance, it also increases the dependence on force. This thesis also details that the relative contribution of contact resistance to the total measured resistance can be maximized by decreasing the probe spacing and tip radius. AFM testing of the layered systems showed that the coated samples had larger predicted plane strain moduli than the Au sample, in contrast to the nanoindentation testing. Thus, when the contact depth was kept sufficiently small, the contact stiffness increased as predicted by substrate models. When the contact depth was on the order of the coating thickness, the contact stiffness actually decreased. Additionally, the forceseparation plots showed that the Ru and Pt surfaces either accumulated large amounts of contamination or were less susceptible to being wiped clean than the Au film. Further, scratch testing of the Au film and Ru and Pt coatings show that the hard surface coatings reduce material removal and contact wear. Ultra-thin Ru and Pt surface coatings on Au films are shown to be improved material systems for ohmic contact switches. The wear is reduced for coated materials, while the resistance and power consumption through the coating are not significantly affected.

  16. Determination of Hydrophobic Contact Angle of Epoxy Resin Compound Silicon Rubber and Silica

    NASA Astrophysics Data System (ADS)

    Syakur, Abdul; Hermawan; Sutanto, Heri

    2017-04-01

    Epoxy resin is a thermosetting polymeric material which is very good for application of high voltage outdoor insulator in electrical power system. This material has several advantages, i.e. high dielectric strength, light weight, high mechanical strength, easy to blend with additive, and easy maintenance if compared to that of porcelain and glass outdoor insulators which are commonly used. However, this material also has several disadvantages, i.e. hydrophilic property, very sensitive to aging and easily degraded when there is a flow of contaminants on its surface. The research towards improving the performance of epoxy resin insulation materials were carried out to obtain epoxy resin insulating material with high water repellent properties and high surface tracking to aging. In this work, insulating material was made at room temperature vulcanization, with material composition: Diglycidyl Ether Bisphenol A (DGEBA), Metaphenylene Diamine (MPDA) as hardener with stoichiometric value of unity, and nanosilica mixed with Silicon Rubber (SiR) with 10% (RTV21), 20% (RTV22), 30% (RTV23), 40% (RTV24) and 50% (RTV25) variation. The usage of nanosilica and Silicon Rubber (SIR) as filler was expected to provide hydrophobic properties and was able to increase the value of surface tracking of materials. The performance of the insulator observed were contact angle of hydrophobic surface materials. Tests carried out using Inclined Plane Tracking procedure according to IEC 60-587: 1984 with Ammonium Chloride (NH4Cl) as contaminants flowed using peristaltic pumps. The results show that hydrophobic contact angle can be determined from each sample, and RTV25 has maximum contact angle among others.

  17. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

    PubMed

    Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

    2018-06-25

    Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

  18. 78 FR 59073 - Pacific Gas and Electric Company; Humboldt Bay Independent Spent Fuel Storage Installation...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-25

    ... AGENCY: Nuclear Regulatory Commission. ACTION: License amendment application; issuance. SUMMARY: The U.S...: 301-287- 3422; email: [email protected] . For technical questions, contact the individual(s...: Chris Allen, Office of Nuclear Material Safety and Safeguards, U.S. Nuclear Regulatory Commission...

  19. 30 CFR 75.1106-3 - Storage of liquefied and nonliquefied compressed gas cylinders; requirements.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES...; requirements. (a) Liquefied and nonliquefied compressed gas cylinders stored in an underground coal mine shall... falling material, contact with power lines and energized electrical equipment, heat from welding, cutting...

  20. Three Dimensional Distribution of Sensitive Field and Stress Field Inversion of Force Sensitive Materials under Constant Current Excitation.

    PubMed

    Zhao, Shuanfeng; Liu, Min; Guo, Wei; Zhang, Chuanwei

    2018-02-28

    Force sensitive conductive composite materials are functional materials which can be used as the sensitive material of force sensors. However, the existing sensors only use one-dimensional electrical properties of force sensitive conductive materials. Even in tactile sensors, the measurement of contact pressure is achieved by large-scale arrays and the units of a large-scale array are also based on the one-dimensional electrical properties of force sensitive materials. The main contribution of this work is to study the three-dimensional electrical properties and the inversion method of three-dimensional stress field of a force sensitive material (conductive rubber), which pushes the application of force sensitive material from one dimensional to three-dimensional. First, the mathematical model of the conductive rubber current field distribution under a constant force is established by the effective medium theory, and the current field distribution model of conductive rubber with different geometry, conductive rubber content and conductive rubber relaxation parameters is deduced. Secondly, the inversion method of the three-dimensional stress field of conductive rubber is established, which provides a theoretical basis for the design of a new tactile sensor, three-dimensional stress field and space force based on force sensitive materials.

  1. Effect of different atmospheres on the electrical contact performance of electronic components under fretting wear

    NASA Astrophysics Data System (ADS)

    Liu, Xin-Long; Cai, Zhen-Bing; Cui, Ye; Liu, Shan-Bang; Xu, Xiao-Jun; Zhu, Min-Hao

    2018-04-01

    The effects of oxide etch on the surface morphology of metals for industrial application is a common cause of electrical contacts failure, and it has becomes a more severe problem with the miniaturization of modern electronic devices. This study investigated the effects of electrical contact resistance on the contactor under three different atmospheres (oxygen, air, and nitrogen) based on 99.9% copper/pogo pins contacts through fretting experiments. The results showed the minimum and stable electrical contact resistance value when shrouded in the nitrogen environment and with high friction coefficient. The rich oxygen environment promotes the formation of cuprous oxide, thereby the electrical contact resistance increases. Scanning electron microscope microscopy and electron probe microanalysis were used to analyze the morphology and distribution of elements of the wear area, respectively. The surface product between contacts was investigated by x-ray photoelectron spectroscopy analysis to explain the different electrical contact properties of the three tested samples during fretting.

  2. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, Junxing; Yang, Fei, E-mail: yfei2007@mail.xjtu.edu.cn; Luo, Kaiyu

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigatemore » the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.« less

  3. Coated semiconductor devices for neutron detection

    DOEpatents

    Klann, Raymond T.; McGregor, Douglas S.

    2002-01-01

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  4. Graphene and Carbon Quantum Dot-Based Materials in Photovoltaic Devices: From Synthesis to Applications

    PubMed Central

    Paulo, Sofia; Palomares, Emilio; Martinez-Ferrero, Eugenia

    2016-01-01

    Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV). Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized solar cells. In this review, we summarize the most common uses of both types of semiconducting materials and highlight the significant advances made in recent years due to the influence that synthetic materials have on final performance. PMID:28335285

  5. High Sensitivity Stress Sensor Based on Hybrid Materials

    NASA Technical Reports Server (NTRS)

    Cao, Xian-An (Inventor)

    2014-01-01

    A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

  6. Investigation of electrical and optical properties of low temperature titanium nitride grown by rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sosnin, D.; Kudryashov, D.; Mozharov, A.

    2017-11-01

    Titanium nitride is a promising material due to its low resistivity, high hardness and chemical inertness. Titanium nitride (TiN) can be applied as an ohmic contact for n-GaN and rectifying contact for p-GaN and also as a part of perovskite solar cell. A technology of TiN low temperature reactive rf-magnetron sputtering has been developed. Electrical and optical properties of titanium nitride were studied as a function of the rf-power and gas mixture composition. Reflectance and transmittance spectra were measured. Cross-section and surface SEM image were obtained. 250 nm thin films of TiN with a resistivity of 23.6 μOm cm were obtained by rf-magnetron sputtering at low temperature.

  7. Temperature profile detector

    DOEpatents

    Tokarz, Richard D.

    1983-01-01

    A temperature profile detector shown as a tubular enclosure surrounding an elongated electrical conductor having a plurality of meltable conductive segments surrounding it. Duplicative meltable segments are spaced apart from one another along the length of the enclosure. Electrical insulators surround these elements to confine molten material from the segments in bridging contact between the conductor and a second electrical conductor, which might be the confining tube. The location and rate of growth of the resulting short circuits between the two conductors can be monitored by measuring changes in electrical resistance between terminals at both ends of the two conductors. Additional conductors and separate sets of meltable segments operational at differing temperatures can be monitored simultaneously for measuring different temperature profiles.

  8. Evaluation of ZnO:Al as a contact material to CdZnTe for radiation detector applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; Gul, Rubi; Hossain, Anwar; Yang, Ge; James, Ralph B.; Pradhan, Aswini K.; Mundle, Rajeh

    2016-09-01

    Aluminum (Al) doped ZnO with very high Al concentration acts as metal regarding its electrical conductivity. ZnO offers many advantages over the commonly-known metals being used today as electrode materials for nuclear detector fabrication. Often, the common metals show poor adhesion to CdZnTe or CdTe surfaces and have a tendency to peel off. In addition, there is a large mismatch of the coefficients of thermal expansion (CTE) between the metals and underlying CdZnTe, which is one of the reasons for mechanical degradation of the contact. In contrast ZnO has a close match of the CTE with CdZnTe and possesses 8-20 times higher hardness than the commonly-used metals. In this presentation, we will explore and discuss the properties of CdZnTe detectors with ZnO:Al contacts.

  9. Finite-Element Analysis of Current-Induced Thermal Stress in a Conducting Sphere

    NASA Astrophysics Data System (ADS)

    Liu, Ming; Yang, Fuqian

    2012-02-01

    Understanding the electrothermal-mechanical behavior of electronic interconnects is of practical importance in improving the structural reliability of electronic devices. In this work, we use the finite-element method to analyze the Joule-heating-induced thermomechanical deformation of a metallic sphere that is sandwiched between two rigid plates. The deformation behavior of the sphere is elastic-perfectly plastic with Young's modulus and yield stress decreasing with temperature. The mechanical stresses created by Joule heating are found to depend on the thermal and mechanical contact conditions between the sphere and the plates. The temperature rise in the sphere for the diathermal condition between the sphere and the plates deviates from the square relation between Joule heat and electric current, due to the temperature dependence of the electrothermal properties of the material. For large electric currents, the simulations reveal the decrease of von Mises stress near the contact interfaces, which suggests that current-induced structural damage will likely occur near the contact interfaces.

  10. Geared Electromechanical Rotary Joint

    NASA Technical Reports Server (NTRS)

    Vranish, John M.

    1994-01-01

    Geared rotary joint provides low-noise ac or dc electrical contact between electrical subsystems rotating relative to each other. Designed to overcome some disadvantages of older electromechanical interfaces, especially intermittency of sliding-contact and rolling-contact electromechanical joints. Hollow, springy planetary gears provide continuous, redundant, low-noise electrical contact between inner and outer gears.

  11. Causes of electrical deaths and injuries among construction workers.

    PubMed

    McCann, Michael; Hunting, Katherine L; Murawski, Judith; Chowdhury, Risana; Welch, Laura

    2003-04-01

    Contact with electrical current is the fourth leading cause of deaths of construction workers. This study evaluates electrical deaths and injuries to construction workers. Two sources of data were analyzed in detail: (1) 1,019 electrical deaths identified by the Bureau of Labor Statistics, Census of Fatal Occupational Injuries (CFOI) for the years 1992-1998; and (2) 61 electrical injuries identified between November 1, 1990 and December 31, 1998 from a George Washington University Emergency Department injury surveillance database. Contact with "live" electrical wiring, equipment, and light fixtures was the main cause of electrical deaths and injuries among electrical workers, followed by contact with overhead power lines. Among non-electrical workers, contact with overhead power lines was the major cause of death. Other causes included contact with energized metal objects, machinery, power tools, and portable lights. Arc flash or blast caused 31% of electrical injuries among construction workers, but less than 2% of electrical deaths. Adoption of a lockout/tagout standard for construction, and training for non-electrical workers in basic electrical safety would reduce the risk of electrical deaths and injuries in construction. Further research is needed on ways to prevent electrical deaths and injuries while working "live". Copyright 2003 Wiley-Liss, Inc.

  12. Microbial fuel cell treatment of ethanol fermentation process water

    DOEpatents

    Borole, Abhijeet P [Knoxville, TN

    2012-06-05

    The present invention relates to a method for removing inhibitor compounds from a cellulosic biomass-to-ethanol process which includes a pretreatment step of raw cellulosic biomass material and the production of fermentation process water after production and removal of ethanol from a fermentation step, the method comprising contacting said fermentation process water with an anode of a microbial fuel cell, said anode containing microbes thereon which oxidatively degrade one or more of said inhibitor compounds while producing electrical energy or hydrogen from said oxidative degradation, and wherein said anode is in electrical communication with a cathode, and a porous material (such as a porous or cation-permeable membrane) separates said anode and cathode.

  13. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOEpatents

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  14. A heater made from graphite composite material for potential deicing application

    NASA Technical Reports Server (NTRS)

    Hung, C. C.; Stahl, M.; Stahl, M.; Stahl, M.

    1986-01-01

    A surface heater was developed using a graphite fiber-epoxy composite as the heating element. This heater can be thin, highly electrically and thermally conductive, and can conform to an irregular surface. Therefore it may be used in an aircraft's thermal deicing system to quickly and uniformly heat the aircraft surface. One-ply of unidirectional graphite fiber-epoxy composite was laminated between two plies of fiber glass-epoxy composite, with nickel foil contacting the end portions of the composite and partly exposed beyond the composites for electrical contact. The model heater used brominated P-100 fibers from Amoco. The fiber's electrical resistivity, thermal conductivity and density were 50 micro ohms per centimeter, 270 W/m-K and 2.30 gm/cubic cm, respectively. The electricity was found to penetrate through the composite in the transverse direction to make an acceptably low foil-composite contact resistance. When conducting current, the heater temperature increase reached 50 percent of the steady state value within 20 sec. There was no overheating at the ends of the heater provided there was no water corrosion. If the foil-composite bonding failed during storage, liquid water exposure was found to oxidize the foil. Such bonding failure may be avoided if perforated nickel foil is used, so that the composite plies can bond to each other through the perforated holes and therefore lock the foil in place.

  15. Groin Flap in Paediatric Age Group to Salvage Hand after Electric Contact Burn: Challenges and Experience

    PubMed Central

    Gupta, Pradeep; Malviya, Manohar

    2017-01-01

    Introduction Electric contact burn is characterised by multiple wounds produced by entrance and exit of the current. Hand is most commonly involved in the same and children are particularly susceptible to such accidents. Aim To document effectiveness and challenges associated with the use of groin flap as an initial definitive treatment of electric contact burn in paediatric age group. Materials and Methods From January 2015 to December 2016, 25 children up to 12 years of age, who were admitted at SMS Medical College, Jaipur, Rajasthan, India, after electric burn injury with hand defect and who were treated by pedicled groin flap at the Department of Plastic and Reconstructive Surgery, were included in the study. Details related to gender, age, type of voltage injury, sites of injury and postoperative complications were recorded. The groin flap was used in these children for coverage of hand and finger defect with exposed bone and tendon. Results Normal functional results were seen in all children treated with pedicled groin flap and all were able to perform activities of daily living. All the children had satisfactory aesthetic result. Conclusion Although, groin flap was an uncomfortable procedure due to limb position that was particularly difficult for children, it was found to be a useful method to salvage hand and it resulted in favourable functional and aesthetic outcome in each case. PMID:28969190

  16. Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Boscá, A., E-mail: alberto.bosca@upm.es; Dpto. de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040; Pedrós, J.

    2015-01-28

    Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method outputmore » values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process.« less

  17. Charging of multiple interacting particles by contact electrification.

    PubMed

    Soh, Siowling; Liu, Helena; Cademartiri, Rebecca; Yoon, Hyo Jae; Whitesides, George M

    2014-09-24

    Many processes involve the movement of a disordered collection of small particles (e.g., powders, grain, dust, and granular foods). These particles move chaotically, interact randomly among themselves, and gain electrical charge by contact electrification. Understanding the mechanisms of contact electrification of multiple interacting particles has been challenging, in part due to the complex movement and interactions of the particles. To examine the processes contributing to contact electrification at the level of single particles, a system was constructed in which an array of millimeter-sized polymeric beads of different materials were agitated on a dish. The dish was filled almost completely with beads, such that beads did not exchange positions. At the same time, during agitation, there was sufficient space for collisions with neighboring beads. The charge of the beads was measured individually after agitation. Results of systematic variations in the organization and composition of the interacting beads showed that three mechanisms determined the steady-state charge of the beads: (i) contact electrification (charging of beads of different materials), (ii) contact de-electrification (discharging of beads of the same charge polarity to the atmosphere), and (iii) a long-range influence across beads not in contact with one another (occurring, plausibly, by diffusion of charge from a bead with a higher charge to a bead with a lower charge of the same polarity).

  18. Carbon-based nanomaterial synthesis using nanosecond electrical discharges in immiscible layered liquids: n-heptane and water

    NASA Astrophysics Data System (ADS)

    Hamdan, Ahmad; Cha, Min Suk

    2018-06-01

    Plasmas in- or in-contact with liquids have been extensively investigated due to their high potential for a wide range of applications including, but not limited to, water treatment, material synthesis and functionalization, bio-medical applications, and liquid fuel reformation. Recently, we successfully developed a discharge using two immiscible liquids, having very different electrical permittivities, which could significantly intensify the electric field intensity. Here, we establish nanosecond discharges at the interface n-heptane-water (with respective relative dielectric permittivities of 2 and 80) to enable the synthesis of carbon-based nanomaterials. A characterization of the as-synthesized material and the annealed (500 °C) material, using various techniques (Fourier-transform, infra-red, scanning and transmission electron microscopes, etc), shows that the as-synthesized material is a mixture of two carbon-based phases: a crystalline phase (graphite like) embedded into a phase of hydrogenated amorphous carbon. The existence of two-phases may be explained by the non-homogeneity of the discharge that induces various chemical reactions in the plasma channel.

  19. Deep-level dominated electrical characteristics of Au contacts on beta-SiC

    NASA Technical Reports Server (NTRS)

    Das, K.; Kong, H. S.; Petit, J. B.; Bumgarner, J. W.; Davis, R. F.; Matus, L. G.

    1990-01-01

    Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

  20. Plasmonic hole arrays for combined photon and electron management

    DOE PAGES

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-11-14

    Material architectures that balance optical transparency and electrical conductivity are highly sought after for thin-film device applications. However, these are competing properties, since the electronic structure that gives rise to conductivity typically also leads to optical opacity. Nanostructured metal films that exhibit extraordinary optical transmission, while at the same time being electrically continuous, offer considerable flexibility in the design of their transparency and resistivity. In this paper, we present design guidelines for metal films perforated with arrays of nanometer-scale holes, discussing the consequences of the choice of nanostructure dimensions, of the type of metal, and of the underlying substrate onmore » their electrical, optical, and interfacial properties. We experimentally demonstrate that such films can be designed to have broad-band optical transparency while being an order of magnitude more conductive than indium tin oxide. Finally, prototypical photovoltaic devices constructed with perforated metal contacts convert ~18% of the incident photons, compared to <1% for identical devices having contacts without the hole array.« less

  1. Evaluation of conductive concrete for anti-static flooring applications

    NASA Astrophysics Data System (ADS)

    Yehia, Sherif; Qaddoumi, Nasser; Hassan, Mohamed; Swaked, Bassam

    2015-04-01

    Static electricity, exchange of electrons, and retention of charge between any two materials due to contact and separation are affected by the condition of the materials being nonconductive or insulated from ground. Several work environments, such as electronics industry, hospitals, offices, and computer rooms all require electro-static discharge (ESD) mitigation. Carpet Tile, Carpet Broadloom, Vinyl Tile, Vinyl sheet, Epoxy and Rubber are examples of existing flooring systems in the market. However, each system has its advantages and limitations. Conductive concrete is a relatively new material technology developed to achieve high electrical conductivity and high mechanical strength. The conductive concrete material can be an economical alternative for these ESD flooring systems. In this paper, the effectiveness of conductive concrete as an anti-static flooring system was evaluated. The initial results indicated that the proposed conductive concrete flooring and ground system met the acceptance criteria stated by ASTM F150.

  2. Current crowding mediated large contact noise in graphene field-effect transistors

    PubMed Central

    Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

    2016-01-01

    The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

  3. Current crowding mediated large contact noise in graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

    2016-12-01

    The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

  4. High sensitivity, solid state neutron detector

    DOEpatents

    Stradins, Pauls; Branz, Howard M; Wang, Qi; McHugh, Harold R

    2015-05-12

    An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.

  5. High sensitivity, solid state neutron detector

    DOEpatents

    Stradins, Pauls; Branz, Howard M.; Wang, Qi; McHugh, Harold R.

    2013-10-29

    An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.

  6. Effectiveness of a worker-worn electric-field sensor to detect power-line proximity and electrical-contact.

    PubMed

    Zeng, Shengke; Powers, John R; Newbraugh, Bradley H

    2010-06-01

    Construction workers suffer the most electrocutions among all industries. Currently, there are no electrical contact warning devices on the market to protect workers. This paper proposes a worker-worn electric-field sensor. As the worker is in proximity to, or in contact with, a live power-circuit, the sensor sets off an audible/visual warning alarm. The sensor also has the potential to wirelessly trip a wireless-capable circuit breaker, and to trigger a wireless transmitter to notify emergency response of an electrical contact. An experiment was conducted to measure electric-field variation on simulated human-wrists (10 defrosted hog-legs) in various proximities and in electrical-contact to a simulated power-circuit. The purpose of these tests was to determine the feasibility of developing a worker-worn electric-field detection sensor for use in protecting workers from contact with energized electrical conductors. This study observed a significant electric-field-magnitude increase as a hog-leg approaches the live-circuit, and the distinct electric-field-magnitude jump as the leg contacts with the live-circuit. The observation indicates that this sensor can be an effective device to warn the workers of electrical hazards. Additionally, the sensor has the potential to wirelessly trip a wireless-capable circuit-breaker and trigger a wireless transmitter (such as a cell phone) to notify an emergency response. The prompt notification prevents the worker from further injury caused by postponed medical-care. Widespread use of this sensor could lower electrocution and electrically related injury rates in the construction industry. (c) 2010 Elsevier Ltd. All rights reserved.

  7. Mass spectra of neutral particles released during electrical breakdown of thin polymer films

    NASA Technical Reports Server (NTRS)

    Kendall, B. R. F.

    1985-01-01

    A special type of time-of-flight mass spectrometer triggered from the breakdown event was developed to study the composition of the neutral particle flux released during the electrical breakdown of polymer films problem. Charge is fed onto a metal-backed polymer surface by a movable smooth platinum contact. A slowly increasing potential from a high-impedance source is applied to the contact until breakdown occurs. The breakdown characteristics is made similar to those produced by an electron beam charging system operating at similar potentials. The apparatus showed that intense instantaneous fluxes of neutral particles are released from the sites of breakdown events. For Teflon FEP films of 50 and 75 microns thickness the material released consists almost entirely of fluorocarbon fragments, some of them having masses greater than 350 atomic mass units amu, while the material released from a 50 micron Kapton film consists mainly of light hydrocarbons with masses at or below 44 amu, with additional carbon monoxide and carbon dioxide. The apparatus is modified to allow electron beam charging of the samples.

  8. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  9. Phase-locked laser array

    NASA Technical Reports Server (NTRS)

    Botez, Dan (Inventor)

    1987-01-01

    A phase-locked laser array comprises a body of semiconductor material having means for defining a plurality of substantially parallel lasing zones which are spaced an effective distance apart so that the modes of the adjacent lasing zones are phase-locked to one another. One of the array electrodes comprises a plurality of electrical contacts to the body between the lasing zones. These contacts provide an enhanced current density profile and thus an increase in the gain in the regions between the lasing zones so that zero degree phase-shift operation between adjacent lasing zones is achievable.

  10. Crosslinked Remote-Doped Hole-Extracting Contacts Enhance Stability under Accelerated Lifetime Testing in Perovskite Solar Cells.

    PubMed

    Xu, Jixian; Voznyy, Oleksandr; Comin, Riccardo; Gong, Xiwen; Walters, Grant; Liu, Min; Kanjanaboos, Pongsakorn; Lan, Xinzheng; Sargent, Edward H

    2016-04-13

    A crosslinked hole-extracting electrical contact is reported, which simultaneously improves the stability and lowers the hysteresis of perovskite solar cells. Polymerizable monomers and crosslinking processes are developed to obviate in situ degradation of the under lying perovskite. The crosslinked material is band-aligned with perovskite. The required free carrier density is induced by a high-work-function metal oxide layer atop the device, following a remote-doping strategy. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Krawczak, Ewelina; Gułkowski, Sławomir

    2017-10-01

    The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

  12. Development of an All-Metal Thick Film Cost Effective Metallization System for Solar Cells

    NASA Technical Reports Server (NTRS)

    Ross, B.

    1980-01-01

    Materials including copper powders, silver-fluoride, and silicon wafers were procured and copper pastes were prepared. Electrodes made with copper pastes were analyzed and compared with the raw materials. A needle-like structure was observed on the electroded solar cells, and was identified as eutectic copper-silicon by electron probe X-ray spectroscopy. The existence of this phase was thought to benefit electrical and metallurgical properties of the contact. Subsequently electrodes made from new material were also shown to contain this phase while simultaneously having poor adhesion.

  13. Reactive conductors for increased efficiency of exploding foil initiators and other detonators

    DOEpatents

    Morris, Christopher J.; Wilkins, Paul; May, Chadd; Zakar, Eugene

    2015-05-05

    Provided among other things are reactive energetic material systems used for conductors in detonators for increased efficiencies. According to an embodiment, a detonator may include: a conductor including at least two constituents including (i) an electrically conductive constituent, and (ii) an electrically non-conductive constituent, that when subjected to sufficient electrical energy, result in an exothermic reaction; and a flyer plate having a non-conductive surface in contact with said conductor. When the sufficient electrical energy is supplied to said conductor, rapid heating and vaporization of at least a portion of the conductor occurs so as to explosively drive at least a portion of the flyer plate away from said conductor. In an embodiment, a multilayer conductor may be formed of alternating layers of at least one electrically conductive layer, and at least one electrically non-conductive layer, that when subjected to sufficient electrical energy, result in an exothermic reaction.

  14. Materials Science

    NASA Image and Video Library

    1998-09-30

    Dr. Jan Rogers, project scientist for the Electrostatic Levitator (ESL) at NASA's Marshall Space Flight Center(MSFC). The ESL uses static electricity to suspend an obejct (about 2-3 mm in diameter) inside a vacuum chamber while a laser heats the sample until it melts. This lets scientists record a wide range of physical properties without the sample contacting the container or any instruments, conditions that would alter the readings. The Electrostatic Levitator is one of several tools used in NASA's microgravity materials sciences program.

  15. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  16. Requirements and testing methods for surfaces of metallic bipolar plates for low-temperature PEM fuel cells

    NASA Astrophysics Data System (ADS)

    Jendras, P.; Lötsch, K.; von Unwerth, T.

    2017-03-01

    To reduce emissions and to substitute combustion engines automotive manufacturers, legislature and first users aspire hydrogen fuel cell vehicles. Up to now the focus of research was set on ensuring functionality and increasing durability of fuel cell components. Therefore, expensive materials were used. Contemporary research and development try to substitute these substances by more cost-effective material combinations. The bipolar plate is a key component with the greatest influence on volume and mass of a fuel cell stack and they have to meet complex requirements. They support bending sensitive components of stack, spread reactants over active cell area and form the electrical contact to another cell. Furthermore, bipolar plates dissipate heat of reaction and separate one cell gastight from the other. Consequently, they need a low interfacial contact resistance (ICR) to the gas diffusion layer, high flexural strength, good thermal conductivity and a high durability. To reduce costs stainless steel is a favoured material for bipolar plates in automotive applications. Steel is characterized by good electrical and thermal conductivity but the acid environment requires a high chemical durability against corrosion as well. On the one hand formation of a passivating oxide layer increasing ICR should be inhibited. On the other hand pitting corrosion leading to increased permeation rate may not occur. Therefore, a suitable substrate lamination combination is wanted. In this study material testing methods for bipolar plates are considered.

  17. Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances

    PubMed Central

    Ouyang, Zhongliang; Li, Dawen

    2016-01-01

    In this study, segmented thermoelectric generators (TEGs) have been simulated with various state-of-the-art TE materials spanning a wide temperature range, from 300 K up to 1000 K. The results reveal that by combining the current best p-type TE materials, BiSbTe, MgAgSb, K-doped PbTeS and SnSe with the strongest n-type TE materials, Cu-Doped BiTeSe, AgPbSbTe and SiGe to build segmented legs, TE modules could achieve efficiencies of up to 17.0% and 20.9% at ΔT = 500 K and ΔT = 700 K, respectively, and a high output power densities of over 2.1 Watt cm−2 at the temperature difference of 700 K. Moreover, we demonstrate that successful segmentation requires a smooth change of compatibility factor s from one end of the TEG leg to the other, even if s values of two ends differ by more than a factor of 2. The influence of the thermal radiation, electrical and thermal contact effects have also been studied. Although considered potentially detrimental to the TEG performance, these effects, if well-regulated, do not prevent segmentation of the current best TE materials from being a prospective way to construct high performance TEGs with greatly enhanced efficiency and output power density. PMID:27052592

  18. Corrosion-Resistant Container for Molten-Material Processing

    NASA Technical Reports Server (NTRS)

    Stern, Theodore G.; McNaul, Eric

    2010-01-01

    In a carbothermal process, gaseous methane is passed over molten regolith, which is heated past its melting point to a temperature in excess of 1,625 C. At this temperature, materials in contact with the molten regolith (or regolith simulant) corrode and lose their structural properties. As a result, fabricating a crucible to hold the molten material and providing a method of contact heating have been problematic. Alternative containment approaches use a large crucible and limit the heat zone of the material being processed, which is inefficient because of volume and mass constraints. Alternative heating approaches use non-contact heating, such as by laser or concentrated solar energy, which can be inefficient in transferring heat and thus require higher power heat sources to accomplish processing. The innovation is a combination of materials, with a substrate material having high structural strength and stiffness and high-temperature capability, and a coating material with a high corrosion resistance and high-temperature capability. The material developed is a molybdenum substrate with an iridium coating. Creating the containment crucible or heater jacket using this material combination requires only that the molybdenum, which is easily processed by conventional methods such as milling, electric discharge machining, or forming and brazing, be fabricated into an appropriate shape, and that the iridium coating be applied to any surfaces that may come in contact with the corrosive molten material. In one engineering application, the molybdenum was fashioned into a container for a heat pipe. Since only the end of the heat pipe is used to heat the regolith, the container has a narrowing end with a nipple in which the heat pipe is snugly fit, and the external area of this nipple, which contacts the regolith to transfer heat into it, is coated with iridium. At the time of this reporting, no single material has been found that can perform the functions of this combination of materials, and other combinations of materials have not proven to be survivable to the corrosiveness of this environment. High-temperature processing of materials with similar constituencies as lunar regolith is fairly common. The carbo-thermal process is commonly used to make metallurgical-grade silicon for the semiconductor and solar-cell industries.

  19. Front contact solar cell with formed electrically conducting layers on the front side and backside

    DOEpatents

    Cousins, Peter John

    2012-06-26

    A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

  20. IR-Sensography™—expanding the scope of contact-free sensing methods

    NASA Astrophysics Data System (ADS)

    Klein, Jens; Schunk, Stephan A.

    2005-01-01

    Capturing the response of one or more sensor materials is conventionally performed by the direct transformation of a chemical or physico-chemical signal into an electrical one. With an increasing number of sensor materials within an arrangement of sensor elements or a sensor array, problems such as contacting each single sensor, signal processing and resistance against cross-talk, harsh conditions such as corrosive atmospheres, etc are limiting factors for the further development of so-called 'chemical noses'. State-of-the-art and commercially available are arrays of eight different sensor materials, literature known in another context are sensor arrays with 256 materials on a silicon wafer, which are contacted via electrical conduits. We present here the concept of the IR-Sensography™, the use of an IR-camera as an external detector system for sensor libraries. Acting like an optical detection method, the IR-camera detects small temperature changes due to physisorption, chemisorption or other forms of interaction or reaction as an output signal in the form of radiation emitted by the multiplicity of sensor materials simultaneously. The temperature resolution of commercially available IR-camera systems can be tuned to the range below 0.1 K. Due to the separation of sensors and the detector device, reaction conditions at the sensor locus can be adapted to the analytical problem and do not need to take care of other boundary conditions which come into play with the analytical device, e.g. the IR-camera. Calibration or regeneration steps can as well be performed over the multiplicity of all sensor materials. Any given chemical compound that comes into contact with the sensor through the passing fluids will result in a specific activity pattern on a spatially fixed library of sensor materials that is unique for the given compound. While the pattern therefore serves as an identifier, the intensity of the pattern represents the quantitative amount of this compound in the mixture. For proof-of-concept experiments we used a 96-fold-sensing device. The sensor library consists of seven different material classes, all synthesized via classical impregnation techniques in different compositions on multihole monolithic ceramic supports (93 different materials based on different concentrations of binary/ternary mixtures of transition metals, three inert materials). We demonstrate with these results the wide range of capabilities for the IR-Sensography™. Both the qualitative and the quantitative determinations of molecules in the gas phase can be performed with this new methodology.

  1. Solar cell with back side contacts

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  2. Low inductance connector assembly

    DOEpatents

    Holbrook, Meghan Ann; Carlson, Douglas S

    2013-07-09

    A busbar connector assembly for coupling first and second terminals on a two-terminal device to first and second contacts on a power module is provided. The first terminal resides proximate the first contact and the second terminal resides proximate the second contact. The assembly comprises a first bridge having a first end configured to be electrically coupled to the first terminal, and a second end configured to be electrically coupled to the second contact, and a second bridge substantially overlapping the first bridge and having a first end electrically coupled to the first contact, and a second end electrically coupled to the second terminal.

  3. Electro-catalytic oxidation device for removing carbon from a fuel reformate

    DOEpatents

    Liu, Di-Jia [Naperville, IL

    2010-02-23

    An electro-catalytic oxidation device (ECOD) for the removal of contaminates, preferably carbonaceous materials, from an influent comprising an ECOD anode, an ECOD cathode, and an ECOD electrolyte. The ECOD anode is at a temperature whereby the contaminate collects on the surface of the ECOD anode as a buildup. The ECOD anode is electrically connected to the ECOD cathode, which consumes the buildup producing electricity and carbon dioxide. The ECOD anode is porous and chemically active to the electro-catalytic oxidation of the contaminate. The ECOD cathode is exposed to oxygen, and made of a material which promotes the electro-chemical reduction of oxygen to oxidized ions. The ECOD electrolyte is non-permeable to gas, electrically insulating and a conductor to oxidized. The ECOD anode is connected to the fuel reformer and the fuel cell. The ECOD electrolyte is between and in ionic contact with the ECOD anode and the ECOD cathode.

  4. Design Guidelines for Shielding Effectiveness, Current Carrying Capability, and the Enhancement of Conductivity of Composite Materials

    NASA Technical Reports Server (NTRS)

    Evans, R. W.

    1997-01-01

    These guidelines address the electrical properties of composite materials which may have an effect on electromagnetic compatibility (EMC). The main topics of the guidelines include the electrical shielding, fault current return, and lightning protection capabilities of graphite reinforced polymers, since they are somewhat conductive but may require enhancement to be adequate for EMC purposes. Shielding effectiveness depends heavily upon the conductivity of the material. Graphite epoxy can provide useful shielding against RF signals, but it is approximately 1,000 times more resistive than good conductive metals. The reduced shielding effectiveness is significant but is still useful in many cases. The primary concern is with gaps and seams in the material just as it is with metal. Current carrying capability of graphite epoxy is adequate for dissipation static charges, but fault currents through graphite epoxy may cause fire at the shorting contact and at joints. The effect of lightning on selected graphite epoxy material and mating surfaces is described, and protection methods are reviewed.

  5. Ambipolar transport based on CVD-synthesized ReSe2

    NASA Astrophysics Data System (ADS)

    Kang, Byunggil; Kim, Youngchan; Cho, Jeong Ho; Lee, Changgu

    2017-06-01

    Control of the carrier type in two dimensional (2D) materials is a serious issue for the realization of logic devices. The carrier type control of 2D semiconducting materials such as MoTe2, WSe2 and black phosphorus have been studied for this purpose. However, the systematic study on the polarity control of transistors based on ReSe2, a new member of 2D materials, has remained unexplored despite the intriguing anisotropic optical and electrical properties deriving from the exotic crystal structure. Here, we report the electrical characterization of field effect transistors (FETs) of single crystalline ReSe2 grown by a chemical vapor deposition. In contrast to a previous report of unipolar p-type exfoliated crystals, synthesized ReSe2 FETs on SiO2 with Au contact exhibit highly symmetric ambipolar behaviors with the current on/off ratios of ~104 for both of hole and electron injection. The carrier type could be controlled via the metal contact. With Al contacts, ReSe2 FETs display perfect transition to pure n-type unipolar behavior. It is found that carrier type of ReSe2 via thickness variation was hardly modulated because the ReSe2 bandgap has little dependence on its thickness. We successfully achieved the fabrication of a logic inverter by using only ambipolar ReSe2 FETs on SiO2/Si without electrostatic doping or chemical treatments. These results demonstrate that ReSe2 is a promising candidate for future low power logic devices and functional nano electronic applications.

  6. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  7. Influence of disorder on transfer characteristics of organic electrochemical transistors

    NASA Astrophysics Data System (ADS)

    Friedlein, Jacob T.; Rivnay, Jonathan; Dunlap, David H.; McCulloch, Iain; Shaheen, Sean E.; McLeod, Robert R.; Malliaras, George G.

    2017-07-01

    Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.

  8. Low-Temperature Properties of Silver

    PubMed Central

    Smith, David R.; Fickett, F. R.

    1995-01-01

    Pure silver is used extensively in the preparation of high-temperature superconductor wires, tapes, films, and other configurations in which the silver not only shields the superconducting material from the surrounding materials, but also provides a degree of flexibility and strain relief, as well as stabilization and low-resistance electrical contact. Silver is relatively expensive, but at this stage of superconductor development, its unique combination of properties seems to offer the only reasonable means of achieving usable lengths of conductor. In this role, the low-temperature physical (electrical, thermal, magnetic, optical) and mechanical properties of the silver all become important. Here we present a collection of properties data extracted from the cryogenic literature and, to the extent possible, selected for reliability. PMID:29151733

  9. Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

    NASA Astrophysics Data System (ADS)

    Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

    2013-05-01

    Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

  10. Construction fatality due to electrical contact in Ontario, Canada, 1997-2007.

    PubMed

    Kim, Hwan; Lewko, John; Garritano, Enzo; Sharma, Bhanu; Moody, Joel; Colantonio, Angela

    2016-06-27

    Electrical contact is a leading cause of occupational fatality in the construction industry. However, research on the factors that contribute to electricity-related fatality in construction is limited. To characterize, using an adapted Haddon's Matrix, the factors that contribute to electricity-related occupational fatalities in the construction industry in Ontario, Canada. Coroner's data on occupational electricity-related fatalities between 1997-2007 in the construction industry were acquired from the Ontario Ministry of Labour. Using an adapted Haddon's Matrix, we characterized worker, agent, and environmental characteristics of electricity-related occupational fatalities in the province through a narrative text analysis. Electrical contact was responsible for 15% of all occupational fatalities among construction workers in Ontario. Factors associated with said occupational fatalities included direct contact with electrical sources, lower voltage sources, and working outdoors. This study provides a profile of electricity-related occupational fatalities among construction workers in Ontario, and can be used to inform safety regulations.

  11. Contact and Bandgap Engineering in Two Dimensional Crystal

    NASA Astrophysics Data System (ADS)

    Chu, Tao

    At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D vHs DOS at the band edge of bilayer graphene, was experimentally observed in transport for the first time. (2) The bandgap of bilayer MoS2 is also predicted to be continuously tuned to zero by applying a perpendicular electric field. Here, the first experimental realization of tuning the bandgap of bilayer MoS2 by a vertical electric field is presented. An analytical approach utilizing the threshold voltages from ambipolar characteristics is employed to quantitatively extract bandgaps, which is further benchmarked by temperature dependent bandgap measurements and photoluminescence measurements. (3) Few layer graphene is employed as an example to demonstrate a novel self-aligned edge contacting scheme for layered material systems.

  12. Machine finishes balls to high degree of roundness

    NASA Technical Reports Server (NTRS)

    Angele, W.; Hill, J. P., Jr.

    1972-01-01

    Machine was developed to finish ball to roundness within 12.5 nm (half a microinch) from any types of hard material. Grinding and polishing to this tolerance is accomplished by lapping elements on four to six motor-driven spindles. Spindles are adjustably spring-loaded to ensure constant contact pressure on ball and are driven by variable speed electric motors.

  13. Deformation and electrical properties of magnetic and vertically conductive composites with a chain-of-spheres structure

    NASA Astrophysics Data System (ADS)

    Choi, Chulmin; Hong, Soonkook; Chen, Li-Han; Liu, Chin-Hung; Choi, Duyoung; Kuru, Cihan; Jin, Sungho

    2014-05-01

    Vertically anisotropically conductive composites with aligned chain-of-spheres of 20-75 mm Ni particles in an elastomer matrix have been prepared by curing the mixture at 100°C-150°C under an applied magnetic field of ˜300-1000 Oe. The particles are coated with a ˜120 nm thick Au layer for enhanced electrical conductivity. The resultant vertically aligned but laterally isolated columns of conductive particles extend through the whole composite thickness and the end of the Ni columns protrude from the surface, contributing to enhanced electrical contact on the composite surface. The stress-strain curve on compressive deformation exhibits a nonlinear behavior with a rapidly increasing Young's modulus with stress (or pressure). The electrical contact resistance Rc decreases rapidly when the applied pressure is small and then more gradually after the applied pressure reaches 500 psi (˜3.4 MPa), corresponding to a 30% deformation. The directionally conductive elastomer composite material with metal pads and conductive electrodes on the substrate surface can be used as a convenient tactile shear sensor for applications involving artificial limbs, robotic devices, and other visual communication devices such as touch sensitive screens.

  14. Strain Sensing Based on Multiscale Composite Materials Reinforced with Graphene Nanoplatelets.

    PubMed

    Moriche, Rocío; Prolongo, Silvia G; Sánchez, María; Jiménez-Suárez, Alberto; Campo, Mónica; Ureña, Alejandro

    2016-11-07

    The electrical response of NH2-functionalized graphene nanoplatelets composite materials under strain was studied. Two different manufacturing methods are proposed to create the electrical network in this work: (a) the incorporation of the nanoplatelets into the epoxy matrix and (b) the coating of the glass fabric with a sizing filled with the same nanoplatelets. Both types of multiscale composite materials, with an in-plane electrical conductivity of ~10 -3 S/m, showed an exponential growth of the electrical resistance as the strain increases due to distancing between adjacent functionalized graphene nanoplatelets and contact loss between overlying ones. The sensitivity of the materials analyzed during this research, using the described procedures, has been shown to be higher than commercially available strain gauges. The proposed procedures for self-sensing of the structural composite material would facilitate the structural health monitoring of components in difficult to access emplacements such as offshore wind power farms. Although the sensitivity of the multiscale composite materials was considerably higher than the sensitivity of metallic foils used as strain gauges, the value reached with NH2 functionalized graphene nanoplatelets coated fabrics was nearly an order of magnitude superior. This result elucidated their potential to be used as smart fabrics to monitor human movements such as bending of fingers or knees. By using the proposed method, the smart fabric could immediately detect the bending and recover instantly. This fact permits precise monitoring of the time of bending as well as the degree of bending.

  15. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  16. Electrical performance of PEDOT:PSS-based textile electrodes for wearable ECG monitoring: a comparative study.

    PubMed

    Castrillón, Reinel; Pérez, Jairo J; Andrade-Caicedo, Henry

    2018-04-02

    Wearable textile electrodes for the detection of biopotentials are a promising tool for the monitoring and early diagnosis of chronic diseases. We present a comparative study of the electrical characteristics of four textile electrodes manufactured from common fabrics treated with a conductive polymer, a commercial fabric, and disposable Ag/AgCl electrodes. These characteristics will allow identifying the performance of the materials when used as ECG electrodes. The electrodes were subjected to different electrical tests, and complemented with conductivity calculations and microscopic images to determine their feasibility in the detection of ECG signals. We evaluated four electrical characteristics: contact impedance, electrode polarization, noise, and long-term performance. We analyzed PEDOT:PSS treated fabrics based on cotton, cotton-polyester, lycra and polyester; also a commercial fabric made of silver-plated nylon Shielde® Med-Tex P130, and commercial Ag/AgCl electrodes. We calculated conductivity from the surface resistance and, analyzed their surface at a microscopic level. Rwizard was used in the statistical analysis. The results showed that textile electrodes treated with PEDOT:PSS are suitable for the detection of ECG signals. The error detecting features of the ECG signal was lower than 2% and the electrodes kept working properly after 36 h of continuous use. Even though the contact impedance and the polarization level in textile electrodes were greater than in commercial electrodes, these parameters did not affect the acquisition of the ECG signals. Fabrics conductivity calculations were consistent to the contact impedance.

  17. Non-Contact Measurements of Creep Properties of Refractory Materials

    NASA Technical Reports Server (NTRS)

    Lee, Jonghyun; Bradshaw, Richard C.; Hyers, Robert W.; Rogers, Jan R.; Rathz, Thomas J.; Wall, James J.; Choo, Hahn; Liaw, Peter

    2006-01-01

    State-of-the-art technologies for hypersonic aircraft, nuclear electric/thermal propulsion for spacecraft, and more efficient jet engines are driving ever more demanding needs for high-temperature (>2000 C) materials. At such high temperatures, creep rises as one of the most important design factors to be considered. Since conventional measurement techniques for creep resistance are limited to about 17OO0C, a new technique is in demand for higher temperatures. This paper presents a non-contact method using electrostatic levitation (ESL) which is applicable to both metallic and non-metallic materials. The samples were rotated quickly enough to cause creep deformation by centrifugal acceleration. The deformation of the samples was captured with a high speed camera and then the images were analyzed to estimate creep resistance. Finite element analyses were performed and compared to the experiments to verify the new method. Results are presented for niobium and tungsten, representative refractory materials at 2300 C and 2700 C respectively.

  18. Conduit for high temperature transfer of molten semiconductor crystalline material

    NASA Technical Reports Server (NTRS)

    Fiegl, George (Inventor); Torbet, Walter (Inventor)

    1983-01-01

    A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

  19. Effects of Surface Roughness and Aging on the Electrical Contact Resistance and Residual Stress in Gold-Nickel-Copper Connector Materials

    DTIC Science & Technology

    2014-12-01

    with nickel coatings can result in compressive stresses, and the deposition of gold with small amounts of cobalt increase the coating hardness/wear...magnetic metal. In the literature, there are a few different approaches to allow for the sputter deposition of magnetic materials including: doping ...the target (i.e., nickel doped with vanadium, typically on the order of 7- 9% [19]) to the point that it is no longer magnetic, heating the target

  20. High current capacity electrical connector

    DOEpatents

    Bettis, Edward S.; Watts, Harry L.

    1976-01-13

    An electrical connector is provided for coupling high current capacity electrical conductors such as copper busses or the like. The connector is arranged in a "sandwiched" configuration in which a conductor plate contacts the busses along major surfaces thereof clamped between two stainless steel backing plates. The conductor plate is provided with a plurality of contact buttons affixed therein in a spaced array such that the caps of the buttons extend above the conductor plate surface to contact the busses. When clamping bolts provided through openings in the sandwiched arrangement are tightened, Belleville springs provided under the rim of each button cap are compressed and resiliently force the caps into contact with the busses' contacting surfaces to maintain a predetermined electrical contact area provided by the button cap tops. The contact area does not change with changing thermal or mechanical stresses applied to the coupled conductors.

  1. All diamond self-aligned thin film transistor

    DOEpatents

    Gerbi, Jennifer [Champaign, IL

    2008-07-01

    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  2. Spectral Induced Polarization of Low-pH Concrete. Influence of the Electrical Double Layer and Pore Size

    NASA Astrophysics Data System (ADS)

    Leroy, P. G.; Gaboreau, S.; Zimmermann, E.; Hoerdt, A.; Claret, F.; Huisman, J. A.; Tournassat, C.

    2017-12-01

    Low-pH concretes are foreseen to be used in nuclear waste disposal. Understanding their reactivity upon the considered host-rock is a key point. Evolution of mineralogy, porosity, pore size distribution and connectivity can be monitored in situ using geophysical methods such as induced polarization (IP). This electrical method consists of injecting an alternating current and measuring the resulting voltage in the porous medium. Spectral IP (SIP) measurements in the 10 mHz to 10 kHz frequency range were carried out on low-pH concrete and cement paste first in equilibrium and then in contact with a CO2 enriched and diluted water. We observed a very high resistivity of the materials (> 10 kOhm m) and a strong phase shift between injected current and measured voltage (superior to 40 mrad and above 100 mrad for frequencies > 100 Hz). These observations were modelled by considering membrane polarization with ion exclusion in nanopores whose surface electrical properties were computed using a basic Stern model of the cement/water interface. Pore size distribution was deduced from SIP and was compared to the measured ones. In addition, we observed a decrease of the material resistivity due to the dissolution of cement in contact with external water. Our results show that SIP may be a valuable method to monitor the mineralogy and the petrophysical and transport properties of cements.

  3. Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

    NASA Astrophysics Data System (ADS)

    Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

    2018-03-01

    70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

  4. Substantially oxygen-free contact tube

    NASA Technical Reports Server (NTRS)

    Pike, James F. (Inventor)

    1993-01-01

    A device for arc welding is provided in which a continuously-fed electrode wire is in electrical contact with a contact tube. The contact tube is improved by using a substantially oxygen-free conductive alloy in order to reduce the amount of electrical erosion.

  5. Substantially Oxygen-Free Contact Tube

    NASA Technical Reports Server (NTRS)

    Pike, James F. (Inventor)

    1991-01-01

    A device for arc welding is provided in which a continuously-fed electrode wire is in electrical contact with a contact tube. The contact tube is improved by using a substantially oxygen-free conductive alloy in order to reduce the amount of electrical erosion.

  6. Characterization of Acousto-Electric Cluster and Array Levitation and its Application to Evaporation

    NASA Technical Reports Server (NTRS)

    Robert E. Apfel; Zheng, Yibing

    2000-01-01

    An acousto-electric levitator has been developed to study the behavior of liquid drop and solid particle clusters and arrays. Unlike an ordinary acoustic levitator that uses only a standing acoustic wave to levitate a single drop or particle, this device uses an extra electric static field and the acoustic field simultaneously to generate and levitate charged drops in two-dimensional arrays in air without any contact to a solid surface. This cluster and array generation (CAG) instrument enables us to steadily position drops and arrays to study the behavior of multiple drop and particle systems such as spray and aerosol systems relevant to the energy, environmental, and material sciences.

  7. Surface Breakdown Characteristics of Silicone Oil for Electric Power Apparatus

    NASA Astrophysics Data System (ADS)

    Wada, Junichi; Nakajima, Akitoshi; Miyahara, Hideyuki; Takuma, Tadasu; Okabe, Shigemitu; Kohtoh, Masanori; Yanabu, Satoru

    This paper describes the surface breakdown characteristics of the silicone oil which has the possibility of the application to innovative switchgear as an insulating medium. At the first step, we have experimentally studied on the impulse breakdown characteristics of the configuration with a triple-junction where a solid insulator is in contact with the electrode. The test configurations consist of solid material (Nomex and pressboard) and liquid insulation oil (silicone and mineral oil). We have discussed the experimental results based on the maximal electric field at a triple-junction. As the second step, we have studied the configuration which may improve the surface breakdown characteristics by lowering the electric field near the triple-junction.

  8. Method and apparatus for electron-only radiation detectors from semiconductor materials

    DOEpatents

    Lund, James C.

    2000-01-01

    A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

  9. Catalytic aided electrical discharge machining of polycrystalline diamond - parameter analysis of finishing condition

    NASA Astrophysics Data System (ADS)

    Haikal Ahmad, M. A.; Zulafif Rahim, M.; Fauzi, M. F. Mohd; Abdullah, Aslam; Omar, Z.; Ding, Songlin; Ismail, A. E.; Rasidi Ibrahim, M.

    2018-01-01

    Polycrystalline diamond (PCD) is regarded as among the hardest material in the world. Electrical Discharge Machining (EDM) typically used to machine this material because of its non-contact process nature. This investigation was purposely done to compare the EDM performances of PCD when using normal electrode of copper (Cu) and newly proposed graphitization catalyst electrode of copper nickel (CuNi). Two level full factorial design of experiment with 4 center points technique was used to study the influence of main and interaction effects of the machining parameter namely; pulse-on, pulse-off, sparking current, and electrode materials (categorical factor). The paper shows interesting discovery in which the newly proposed electrode presented positive impact to the machining performance. With the same machining parameters of finishing, CuNi delivered more than 100% better in Ra and MRR than ordinary Cu electrode.

  10. Methods of forming semiconductor devices and devices formed using such methods

    DOEpatents

    Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

    2013-05-21

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  11. Methods for forming particles from single source precursors

    DOEpatents

    Fox, Robert V [Idaho Falls, ID; Rodriguez, Rene G [Pocatello, ID; Pak, Joshua [Pocatello, ID

    2011-08-23

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  12. Low damage electrical modification of 4H-SiC via ultrafast laser irradiation

    NASA Astrophysics Data System (ADS)

    Ahn, Minhyung; Cahyadi, Rico; Wendorf, Joseph; Bowen, Willie; Torralva, Ben; Yalisove, Steven; Phillips, Jamie

    2018-04-01

    The electrical properties of 4H-SiC under ultrafast laser irradiation in the low fluence regime (<0.50 J/cm2) are presented. The appearance of high spatial frequency laser induced periodic surface structures is observed at a fluence near 0.25 J/cm2 and above, with variability in environments like in air, nitrogen, and a vacuum. In addition to the formation of periodic surface structures, ultrafast laser irradiation results in possible surface oxidation and amorphization of the material. Lateral conductance exhibits orders of magnitude increase, which is attributed to either surface conduction or modification of electrical contact properties, depending on the initial material conductivity. Schottky barrier formation on ultrafast laser irradiated 4H-SiC shows an increase in the barrier height, an increase in the ideality factor, and sub-bandgap photovoltaic responses, suggesting the formation of photo-active point defects. The results suggest that the ultrafast laser irradiation technique provides a means of engineering spatially localized structural and electronic modification of wide bandgap materials such as 4H-SiC with relatively low surface damage via low temperature processing.

  13. Roll-to-roll light directed electrophoretic deposition system and method

    DOEpatents

    Pascall, Andrew J.; Kuntz, Joshua

    2017-06-06

    A roll-to-roll light directed electrophoretic deposition system and method advances a roll of a flexible electrode web substrate along a roll-to-roll process path, where a material source is positioned to provide on the flexible electrode web substrate a thin film colloidal dispersion of electrically charged colloidal material dispersed in a fluid. A counter electrode is also positioned to come in contact with the thin film colloidal dispersion opposite the flexible electrode web substrate, where one of the counter electrode and the flexible electrode web substrate is a photoconductive electrode. A voltage source is connected to produce an electric potential between the counter electrode and the flexible electrode web substrate to induce electrophoretic deposition on the flexible electrode web substrate when the photoconductive electrode is rendered conductive, and a patterned light source is arranged to illuminate the photoconductive electrode with a light pattern and render conductive illuminated areas of the photoconductive electrode so that a patterned deposit of the electrically charged colloidal material is formed on the flexible electrode web substrate.

  14. Drawing Sensors with Ball-Milled Blends of Metal-Organic Frameworks and Graphite

    PubMed Central

    Ko, Michael; Aykanat, Aylin; Smith, Merry K.

    2017-01-01

    The synthetically tunable properties and intrinsic porosity of conductive metal-organic frameworks (MOFs) make them promising materials for transducing selective interactions with gaseous analytes in an electrically addressable platform. Consequently, conductive MOFs are valuable functional materials with high potential utility in chemical detection. The implementation of these materials, however, is limited by the available methods for device incorporation due to their poor solubility and moderate electrical conductivity. This manuscript describes a straightforward method for the integration of moderately conductive MOFs into chemiresistive sensors by mechanical abrasion. To improve electrical contacts, blends of MOFs with graphite were generated using a solvent-free ball-milling procedure. While most bulk powders of pure conductive MOFs were difficult to integrate into devices directly via mechanical abrasion, the compressed solid-state MOF/graphite blends were easily abraded onto the surface of paper substrates equipped with gold electrodes to generate functional sensors. This method was used to prepare an array of chemiresistors, from four conductive MOFs, capable of detecting and differentiating NH3, H2S and NO at parts-per-million concentrations. PMID:28946624

  15. A lightweight scalable agarose-gel-synthesized thermoelectric composite

    NASA Astrophysics Data System (ADS)

    Kim, Jin Ho; Fernandes, Gustavo E.; Lee, Do-Joong; Hirst, Elizabeth S.; Osgood, Richard M., III; Xu, Jimmy

    2018-03-01

    Electronic devices are now advancing beyond classical, rigid systems and moving into lighweight flexible regimes, enabling new applications such as body-wearables and ‘e-textiles’. To support this new electronic platform, composite materials that are highly conductive yet scalable, flexible, and wearable are needed. Materials with high electrical conductivity often have poor thermoelectric properties because their thermal transport is made greater by the same factors as their electronic conductivity. We demonstrate, in proof-of-principle experiments, that a novel binary composite can disrupt thermal (phononic) transport, while maintaining high electrical conductivity, thus yielding promising thermoelectric properties. Highly conductive Multi-Wall Carbon Nanotube (MWCNT) composites are combined with a low-band gap semiconductor, PbS. The work functions of the two materials are closely matched, minimizing the electrical contact resistance within the composite. Disparities in the speed of sound in MWCNTs and PbS help to inhibit phonon propagation, and boundary layer scattering at interfaces between these two materials lead to large Seebeck coefficient (> 150 μV/K) (Mott N F and Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon), p 47) and a power factor as high as 10 μW/(K2 m). The overall fabrication process is not only scalable but also conformal and compatible with large-area flexible hosts including metal sheets, films, coatings, possibly arrays of fibers, textiles and fabrics. We explain the behavior of this novel thermoelectric material platform in terms of differing length scales for electrical conductivity and phononic heat transfer, and explore new material configurations for potentially lightweight and flexible thermoelectric devices that could be networked in a textile.

  16. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  17. Transmissive metallic contact for amorphous silicon solar cells

    DOEpatents

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  18. Vertical pillar-superlattice array and graphene hybrid light emitting diodes.

    PubMed

    Lee, Jung Min; Choung, Jae Woong; Yi, Jaeseok; Lee, Dong Hyun; Samal, Monica; Yi, Dong Kee; Lee, Chul-Ho; Yi, Gyu-Chul; Paik, Ungyu; Rogers, John A; Park, Won Il

    2010-08-11

    We report a type of device that combines vertical arrays of one-dimensional (1D) pillar-superlattice (PSL) structures with 2D graphene sheets to yield a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics. In this application, graphene sheets coated with very thin metal layers exhibit good mechanical and electrical properties and an ability to mount, in a freely suspended configuration, on the PSL arrays as a top window electrode. Optical characterization demonstrates that graphene exhibits excellent optical transparency even after deposition of the thin metal films. Thermal annealing of the graphene/metal (Gr/M) contact to the GaAs decreases the contact resistance, to provide enhanced carrier injection. The resulting PSL-Gr/M LEDs exhibit bright light emission over large areas. The result suggests the utility of graphene-based materials as electrodes in devices with unusual, nonplanar 3D architectures.

  19. Basic investigation into the electrical performance of solid electrolyte membranes

    NASA Technical Reports Server (NTRS)

    Richter, R.

    1982-01-01

    The electrical performance of solid electrolyte membranes was investigated analytically and the results were compared with experimental data. It is concluded that in devices that are used for pumping oxygen the major power losses have to be attributed to the thin film electrodes. Relations were developed by which the effectiveness of tubular solid electrolyte membranes can be determined and the optimum length evaluated. The observed failure of solid electrolyte tube membranes in very localized areas is explained by the highly non-uniform current distribution in the membranes. The analysis points to a possible contact resistance between the electrodes and the solid electrolyte material. This possible contact resistance remains to be investigated experimentally. It is concluded that film electrodes are not appropriate for devices which operate with current flow, i.e., pumps though they can be employed without reservation in devices that measure oxygen pressures if a limited increase in the response time can be tolerated.

  20. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  1. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  2. Multi-material micro-electromechanical fibers with bendable functional domains

    NASA Astrophysics Data System (ADS)

    Nguyen-Dang, Tung; Page, Alexis G.; Qu, Yunpeng; Volpi, Marco; Yan, Wei; Sorin, Fabien

    2017-04-01

    The integration of increasingly complex functionalities within thermally drawn multi-material fibers is heralding a novel path towards advanced soft electronics and smart fabrics. Fibers capable of electronic, optoelectronic, piezoelectric or energy harvesting functions are created by assembling new materials in intimate contact within increasingly complex architectures. Thus far, however, the opportunities associated with the integration of cantilever-like structures with freely moving functional domains within multi-material fibers have not been explored. Used extensively in the micro-electromechanical system (MEMS) technology, electro-mechanical transductance from moving and bendable domains is used in a myriad of applications. In this article we demonstrate the thermal drawing of micro-electromechanical fibers (MEMF) that can detect and localize pressure with high accuracy along their entire length. This ability results from an original cantilever-like design where a freestanding electrically conductive polymer composite film bends under an applied pressure. As it comes into contact with another conducting domain, placed at a prescribed position in the fiber cross-section, an electrical signal is generated. We show that by a judicious choice of materials and electrical connectivity, this signal can be uniquely related to a position along the fiber axis. We establish a model that predicts the position of a local touch from the measurement of currents generated in the 1D MEMF device, and demonstrate an excellent agreement with the experimental data. This ability to detect and localize touch over large areas, curved surfaces and textiles holds significant opportunities in robotics and prosthetics, flexible electronic interfaces, and medical textiles. , which features invited work from the best early-career researchers working within the scope of J. Phys. D. This project is part of the Journal of Physics series’ 50th anniversary celebrations in 2017. Fabien Sorin was selected by the Editorial Board of J. Phys. D as an emerging Leader.

  3. Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

    NASA Astrophysics Data System (ADS)

    Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

    2015-08-01

    We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

  4. Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films.

    PubMed

    Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

    2015-08-01

    We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

  5. Improved contact resistance stability in a MEMS separable electrical connector

    NASA Astrophysics Data System (ADS)

    Larsson, M. P.

    2005-12-01

    A MEMS in-line separable electrical connector with improved contact resistance stability to thermal fluctuations and mating cycles is described. The design allows sliding, in-line connection between separate halves, inducing vertical deflections on a set of flexible conductors to establish stable electrical contacts. Features are present on both halves to ensure precise lateral and vertical self-alignment; preventing shorts and maintaining consistent conductor deflections. Characterisation on early prototypes revealed significant variability in contact resistance with thermal fluctuations and mating cycle history. As flexible conductors are multi-layered structures of Au supported by a thick structural layer of Ni, they undergo differential thermal expansion, introducing variability in contact resistance with temperature. Sliding contact wear during repeated mating leads to removal of portions of the Au surface coating, and electrical contact between underlying (non-noble) Ni layers. By using a harder Co-Au alloy as the contact surface layer and modifying the arrangement of constituent conductor layers to balance thermal stresses, improvements to both wear and thermal tolerance of contact resistance can be obtained. Devices implementing the above design modifications show stable contact resistance over 100 mating cycles and an increase in contact resistance of between 3.5 and 7% over a temperature rise of 60°C. The electrical performance improvements increase the attractiveness of the MEMS in-line separable connector concept for applications in portable electronics and MEMS integration.

  6. Separation and Purification of Mineral Salts from Spacecraft Wastewater Processing via Electrostatic Beneficiation

    NASA Technical Reports Server (NTRS)

    Miles, John D., II; Lunn, Griffin

    2013-01-01

    Electrostatic separation is a class of material processing technologies commonly used for the sorting of coarse mixtures by means of electrical forces acting on charged or polarized particles. Most if not all of the existing tribo-electrostatic separators had been initially developed for mineral ores beneficiation. It is a well-known process that has been successfully used to separate coal from minerals. Potash (potassium) enrichment where underground salt mines containing large amounts of sodium is another use of this techno logy. Through modification this technology can be used for spacecraft wastewater brine beneficiation. This will add in closing the gap beeen traveling around Earth's Gravity well and long-term space explorations. Food has been brought on all man missions, which is why plant growth for food crops continues to be of interest to NASA. For long-term mission considerations food productions is one of the top priorities. Nutrient recovery is essential for surviving in or past low earth orbit. In our advance bio-regenerative process instead of nitrogen gas produced; soluble nitrate salts that can be recovered for plant fertilizer would be produced instead. The only part missing is the beneficiation of brine to separate the potassium from the sodium. The use of electrostatic beneficiation in this experiment utilizes the electrical charge differences between aluminum and dried brine by surface contact. The helixes within the aluminum tribocharger allows for more surface contact when being agitated. When two materials are in contact, the material with the highest affinity for electrons becomes negatively charged, while the other becomes positively charged. This contact exchange of charge may cause the particles to agglomerate depending on their residence time within the tribocharger, compromising the efficiency of separation. The aim of this experiment is to further the development in electrostatic beneficiation by optimizing the separation of ersatz and possibly real wastewater brine residues. In doing so, ideally it will yield a high potassium enrichment for use in spacecraft plant systems.

  7. Photovoltaic solar cell

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  8. Enhanced Metal Contacts to Carbon Nanotube Networks through Chemical and Physical Modification

    NASA Astrophysics Data System (ADS)

    Cox, Nathanael David

    Carbon nanotubes (CNTs) are an emerging class of nano-structured carbon materials which are currently being studied for applications which would benefit from their desirable electrical and mechanical properties. Potential benefits such as improved current density, flexure tolerance, weight savings, and even radiation tolerance have led to their implementation into numerous devices and structures, many of which are slated for use in space environments. The role of CNTs can be quite diverse, with varied CNT electronic-types and morphologies dictated by the specific application. Despite numerous CNT types and morphologies employed by these technologies, a common link between nearly all of these devices and structures is metal contact to CNTs, where the metal components often provide the link between the carbon nanotubes and the external system. In this work, a variety of CNT-metal systems were characterized in terms of metal morphology analysis and CNT-metal electrical and mechanical interactions, in response to chemical and structural modifications. A large portion of the work additionally focuses on ion irradiation environments. A diverse number of experiments related to CNT-metal interactions will be discussed. For instance, electrochemical interactions between ion-irradiated single-wall CNTs (SWCNTs) and metal salt solutions were utilized to selectively deposit Au nanoparticles (Au-NPs) onto the SWCNTs. A direct correlation was established between defect density and Au-NP areal density, resulting in a method for rapid spatial profiling of ion-irradiation induced defects in SWCNTs. The effect of ion irradiation on the CNT-metal interface was also investigated and it was found that the contact resistance of Ag-SWCNT structures increases, while the specific contact resistance decreases. The increase in overall contact resistance was attributed to increased series resistance in the system due to damage of the bulk SWCNT films, while the decrease in specific contact resistance was attributed to Ag atoms being forward-scattered into the top 5 nm of SWCNT film, as revealed by computational simulations. Additionally, development of Ag-CNT metal matrix composite (MMC) thin films for advanced space solar cell electrodes is discussed. SWCNTs and multi-walled CNTs (MWCNTs) were utilized as reinforcement material in Ag electrodes to address problems related to micro-cracks causing electrode fracture and loss of power in solar cells. A method for creating free standing films was developed to enable mechanical property characterization of the MMCs, and it was found that SWCNTs significantly increase the toughness of Ag thin films, due to the SWCNT tensile strength and strain capabilities. CNT-MMC grid-finger structures were also fabricated by solar cell process-compatible techniques and subjected to electrical testing under mechanical stress. The results showed that CNTs are capable of spanning gaps in Ag electrodes upon fracture, both electrically and mechanically.

  9. A 3D contact analysis approach for the visualization of the electrical contact asperities

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Roussos, Constantinos C.; Swingler, Jonathan

    The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a “3D Contact Map” and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approachmore » has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation.« less

  10. A 3D contact analysis approach for the visualization of the electrical contact asperities

    PubMed Central

    Swingler, Jonathan

    2017-01-01

    The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a ‘‘3D Contact Map’’ and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approach has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation. PMID:28105383

  11. A 3D contact analysis approach for the visualization of the electrical contact asperities

    DOE PAGES

    Roussos, Constantinos C.; Swingler, Jonathan

    2017-01-11

    The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a “3D Contact Map” and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approachmore » has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation.« less

  12. Microelectromechanical systems contact stress sensor

    DOEpatents

    Kotovsky, Jack

    2007-12-25

    A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.

  13. Probing quantum Hall states with single-electron transistors at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Gustafsson, Martin; Yankowitz, Matthew; Forsythe, Carlos; Zhu, Xiaoyang; Dean, Cory

    The sequence of fractional quantum Hall states in graphene is not yet fully understood, largely due to disorder-induced limitations of conventional transport studies. Measurements of magnetotransport in other 2D crystals are further complicated by the difficulties in making ohmic contact to the materials. On the other hand, bulk electronic compressibility can provide clear signatures of the integer and fractional quantum Hall effects, does not require ohmic contact, and can be localized to regions of low disorder. The single-electron transistor (SET) is a suitable tool for such experiments due to its small size and high charge sensitivity, which allow electric fields penetrating the 2D electron system to be detected locally and with high fidelity. Here we report studies of exfoliated 2D van der Waals materials fully encapsulated in flakes of hexagonal boron nitride. SETs are fabricated lithographically on top of the encapsulation, yielding a structure which lends itself to experiments at high electric and magnetic fields. We demonstrate the method on monolayer graphene, where we observe fractional quantum Hall states at all filling factors ν = n / 3 up to n = 17 and extract their associated energy gaps for magnetic fields up to 31 tesla.

  14. The potentials and challenges of electron microscopy in the study of atomic chains

    NASA Astrophysics Data System (ADS)

    Banhart, Florian; Torre, Alessandro La; Romdhane, Ferdaous Ben; Cretu, Ovidiu

    2017-04-01

    The article is a brief review on the potential of transmission electron microscopy (TEM) in the investigation of atom chains which are the paradigm of a strictly one-dimensional material. After the progress of TEM in the study of new two-dimensional materials, microscopy of free-standing one-dimensional structures is a new challenge with its inherent potentials and difficulties. In-situ experiments in the TEM allowed, for the first time, to generate isolated atomic chains consisting of metals, carbon or boron nitride. Besides having delivered a solid proof for the existence of atomic chains, in-situ TEM studies also enabled us to measure the electrical properties of these fundamental linear structures. While ballistic quantum conductivity is observed in chains of metal atoms, electrical transport in chains of sp1-hybridized carbon is limited by resonant states and reflections at the contacts. Although substantial progress has been made in recent TEM studies of atom chains, fundamental questions have to be answered, concerning the structural stability of the chains, bonding states at the contacts, and the suitability for applications in nanotechnology. Contribution to the topical issue "The 16th European Microscopy Congress (EMC 2016)", edited by Richard Brydson and Pascale Bayle-Guillemaud

  15. Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

    PubMed

    Suyatin, Dmitry B; Jain, Vishal; Nebol'sin, Valery A; Trägårdh, Johanna; Messing, Maria E; Wagner, Jakob B; Persson, Olof; Timm, Rainer; Mikkelsen, Anders; Maximov, Ivan; Samuelson, Lars; Pettersson, Håkan

    2014-01-01

    Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~10(17) m(-2)) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.

  16. A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

    2017-09-01

    This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

  17. Bipolar electrochemistry.

    PubMed

    Fosdick, Stephen E; Knust, Kyle N; Scida, Karen; Crooks, Richard M

    2013-09-27

    A bipolar electrode (BPE) is an electrically conductive material that promotes electrochemical reactions at its extremities (poles) even in the absence of a direct ohmic contact. More specifically, when sufficient voltage is applied to an electrolyte solution in which a BPE is immersed, the potential difference between the BPE and the solution drives oxidation and reduction reactions. Because no direct electrical connection is required to activate redox reactions, large arrays of electrodes can be controlled with just a single DC power supply or even a battery. The wireless aspect of BPEs also makes it possible to electrosynthesize and screen novel materials for a wide variety of applications. Finally, bipolar electrochemistry enables mobile electrodes, dubbed microswimmers, that are able to move freely in solution. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Silicon nanowire arrays as thermoelectric material for a power microgenerator

    NASA Astrophysics Data System (ADS)

    Dávila, D.; Tarancón, A.; Fernández-Regúlez, M.; Calaza, C.; Salleras, M.; San Paulo, A.; Fonseca, L.

    2011-10-01

    A novel design of a silicon-based thermoelectric power microgenerator is presented in this work. Arrays of silicon nanowires, working as thermoelectric material, have been integrated in planar uni-leg thermocouple microstructures to convert waste heat into electrical energy. Homogeneous, uniformly dense, well-oriented and size-controlled arrays of silicon nanowires have been grown by chemical vapor deposition using the vapor-liquid-solid mechanism. Compatibility issues between the nanowire growth method and microfabrication techniques, such as electrical contact patterning, are discussed. Electrical measurements of the nanowire array electrical conductivity and the Seebeck voltage induced by a controlled thermal gradient or under harvesting operation mode have been carried out to demonstrate the feasibility of the microdevice. A resistance of 240 Ω at room temperature was measured for an array of silicon nanowires 10 µm -long, generating a Seebeck voltage of 80 mV under an imposed thermal gradient of 450 °C, whereas only 4.5 mV were generated under a harvesting operation mode. From the results presented, a Seebeck coefficient of about 150-190 µV K-1 was estimated, which corresponds to typical values for bulk silicon.

  19. Innovative design and material solutions of thermal contact layers for high heat flux applications in fusion devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Federici, G.; Matera, R.; Chiocchio, S.

    1994-11-01

    One difficulty associated with the design and development of sacrificial plasma facing components that have to handle the high heat and particle fluxes in ITER is achieving the necessary contact conductance between the plasma protection material and the high-conductivity substrate in contact with the coolant. This paper presents a novel bond idea which is proposed as one of the options for the sacrificial energy dump targets located at the bottom of the divertor legs. The bonded joint in this design concept provides thermal and electrical contact between the armour and the cooled sub-structure while promoting remote, in-situ maintenance repair andmore » an easy replaceability of the armour part without disturbing the cooling pipes or rewelding neutron irradiated materials. To provide reliable and demountable adhesion, the bond consists of a metal alloy, treated in the semi-solid phase so that it leads to a fine dispersion of a globular solid phase into a liquid matrix (rheocast process). This thermal bond layer would normally operate in the solid state but could be brought reversibly to the semi-solid state during the armour replacement simply by heating it slightly above its solidus temperature. Material and design options are discussed in this paper. Possible methods of installation and removal are described, and lifetime considerations are addressed. In order to validate this concept within the ITER time-frame, a R&D programme must be rapidly implemented.« less

  20. Electrical Burns: First Aid

    MedlinePlus

    ... be caused by a number of sources of electricity, such as lightning, stun guns and contact with ... person who has been injured by contact with electricity should be seen by a doctor. Sometimes an ...

  1. Evaluation of coated metallic bipolar plates for polymer electrolyte membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Yoon, Wonseok; Huang, Xinyu; Fazzino, Paul; Reifsnider, Kenneth L.; Akkaoui, Michael A.

    Metallic bipolar plates for polymer electrolyte membrane (PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance, good mechanical robustness, low material and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrates by electroplating and physical vapor deposition (PVD) methods. The coatings are screened with an electrochemical polarization test for corrosion resistance; then the contact resistance test was performed on selected coatings. The coating investigated include Gold with various thicknesses (2 nm, 10 nm, and 1 μm), Titanium, Zirconium, Zirconium Nitride (ZrN), Zirconium Niobium (ZrNb), and Zirconium Nitride with a Gold top layer (ZrNAu). The substrates include three types of stainless steel: 304, 310, and 316. The results show that Zr-coated samples satisfy the DOE target for corrosion resistance at both anode and cathode sides in typical PEM fuel cell environments in the short-term, but they do not meet the DOE contact resistance goal. Very thin gold coating (2 nm) can significantly decrease the electrical contact resistance, however a relatively thick gold coating (>10 nm) with our deposition method is necessary for adequate corrosion resistance, particularly for the cathode side of the bipolar plate.

  2. The effect of elastic modulus on ablation catheter contact area.

    PubMed

    Camp, Jon J; Linte, Cristian A; Rettmann, Maryam E; Sun, Deyu; Packer, Douglas L; Robb, Richard A; Holmes, David R

    2015-02-21

    Cardiac ablation consists of navigating a catheter into the heart and delivering RF energy to electrically isolate tissue regions that generate or propagate arrhythmia. Besides the challenges of accurate and precise targeting of the arrhythmic sites within the beating heart, limited information is currently available to the cardiologist regarding intricate electrode-tissue contact, which directly impacts the quality of produced lesions. Recent advances in ablation catheter design provide intra-procedural estimates of tissue-catheter contact force, but the most direct indicator of lesion quality for any particular energy level and duration is the tissue-catheter contact area, and that is a function of not only force, but catheter pose and material elasticity as well. In this experiment, we have employed real-time ultrasound (US) imaging to determine the complete interaction between the ablation electrode and tissue to accurately estimate contact, which will help to better understand the effect of catheter pose and position relative to the tissue. By simultaneously recording tracked position, force reading and US image of the ablation catheter, the differing material properties of polyvinyl alcohol cryogel [1] phantoms are shown to produce varying amounts of tissue depression and contact area (implying varying lesion quality) for equivalent force readings. We have shown that the elastic modulus significantly affects the surface-contact area between the catheter and tissue at any level of contact force. Thus we provide evidence that a prescribed level of catheter force may not always provide sufficient contact area to produce an effective ablation lesion in the prescribed ablation time.

  3. Concentrating Solar Power Projects - Dahan Power Plant | Concentrating

    Science.gov Websites

    Plant Country: China Location: Beijing Owner(s): Institute of Electrical Engineering of Chinese Academy Electricity Generation: 1,950 MWh/yr Contact(s): Fengli Du Company: Institute of Electrical Engineering of Electrical Engineering of Chinese Academy of Sciences Owner(s) (%): Institute of Electrical Engineering of

  4. Data Transmission System For A Downhole Component

    DOEpatents

    Hall, David R.; Hall, Jr., H. Tracy; Pixton, David; Dahlgren, Scott; Sneddon, Cameron; Fox, Joe; Briscoe, Michael

    2005-01-18

    The invention is a system for transmitting data through a string of downhole components. In accordance with one aspect of the invention, the system includes a plurality of downhole components, such as sections of pipe in a drill string. Each component has a first and second end, with a first communication element located at the first end and a second communication element located at the second end. Each communication element includes a first contact and a second contact. The system also includes a coaxial cable running between the first and second communication elements, the coaxial cable having a conductive tube and a conductive core within it. The system also includes a first and second connector for connecting the first and second communication elements respectively to the coaxial cable. Each connector includes a conductive sleeve, lying concentrically within the conductive tube, which fits around and makes electrical contact with the conductive core. The conductive sleeve is electrically isolated from the conductive tube. The conductive sleeve of the first connector is in electrical contact with the first contact of the first communication element, the conductive sleeve of the second connector is in electrical contact with the first contact of the second communication element, and the conductive tube is in electrical contact with both the second contact of the first communication element and the second contact of the second communication element.

  5. Data transmission system for a downhole component

    DOEpatents

    Hall, David R.; Hall, Jr., Tracy H.; Pixton, David S.; Dahlgren, Scott Steven; Fox, Joe; Sneddon, Cameron; Briscoe, Michael A.

    2006-05-09

    The invention is a system for transmitting data through a string of downhole components. In accordance with one aspect of the invention, the system includes a plurality of downhole components, such as sections of pipe in a drill string. Each component has a first and second end, with a first communication element located at the first end and a second communication element located at the second end. Each communication element includes a first contact and a second contact. The system also includes a coaxial cable running between the first and second communication elements, the coaxial cable having a conductive tube and a conductive core within it. The system also includes a first and second connector for connecting the first and second communication elements respectively to the coaxial cable. Each connector includes a conductive sleeve, lying concentrically within the conductive tube, which fits around and makes electrical contact with the conductive core. The conductive sleeve is electrically isolated from the conductive tube. The conductive sleeve of the first connector is in electrical contact with the first contact of the first communication element, the conductive sleeve of the second connector is in electrical contact with the first contact of the second communication element, and the conductive tube is in electrical contact with both the second contact of the first communication element and the second contact of the second communication element.

  6. Properties predictive modeling through the concept of a hybrid interphase existing between phases in contact

    NASA Astrophysics Data System (ADS)

    Portan, D. V.; Papanicolaou, G. C.

    2018-02-01

    From practical point of view, predictive modeling based on the physics of composite material behavior is wealth generating; by guiding material system selection and process choices, by cutting down on experimentation and associated costs; and by speeding up the time frame from the research stage to the market place. The presence of areas with different properties and the existence of an interphase between them have a pronounced influence on the behavior of a composite system. The Viscoelastic Hybrid Interphase Model (VHIM), considers the existence of a non-homogeneous viscoelastic and anisotropic interphase having properties depended on the degree of adhesion between the two phases in contact. The model applies for any physical/mechanical property (e.g. mechanical, thermal, electrical and/or biomechanical). Knowing the interphasial variation of a specific property one can predict the corresponding macroscopic behavior of the composite. Moreover, the model acts as an algorithm and a two-way approach can be used: (i) phases in contact may be chosen to get the desired properties of the final composite system or (ii) the initial phases in contact determine the final behavior of the composite system, that can be approximately predicted. The VHIM has been proven, amongst others, to be extremely useful in biomaterial designing for improved contact with human tissues.

  7. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs, and we investigate the n-ZnO/p-GaN interface. We show that ZnO has potential as an effective p-contact for these devices, and determine properties that still need improvement in order for ZnO to compete with other contact materials. We also compare the device performance to metal-contacted devices. In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.

  8. Studies of Surface Charging of Polymers by Indirect Triboelectrification

    NASA Astrophysics Data System (ADS)

    Mantovani, James; Calle, Carlos; Groop, Ellen; Buehler, Martin

    2001-03-01

    Charge is known to develop on the surface of an insulating polymer by frictional charging through direct physical contact with another material. We will present results of recent triboelectrification studies of polymer surfaces that utilized an indirect method of frictional charging. This method first involves placing a grounded thin metal foil in stationary contact over the polymer surface. The exposed metal foil is then rubbed with the surface of the material that generates the triboelectric charge. Data is presented for five types of polymers: fiberglass/epoxy, polycarbonate (Lexan), polytetraflouroethylene (Teflon), Rulon J, and polymethylmethacrylate (PMMA, Lucite). The amount of charge that develops on an insulator's surface is measured using the MECA Electrometer, which was developed jointly by NASA Kennedy Space Center and the Jet Propulsion Laboratory to study the electrostatic properties of soil on the surface of Mars. Even though the insulator's surface is electrically shielded from the rubbing material by the grounded metal foil, charge measurements obtained by the MECA Electrometer after the metal foil is separated from the insulator's surface reveal that the insulator's surface does accumulate charge by indirect frictional charging. A possible explanation of the observations will be presented based on a simple contact barrier model.

  9. Spectroscopic On-Line Monitoring of Cu/W Contacts Erosion in HVCBs Using Optical-Fibre Based Sensor and Chromatic Methodology.

    PubMed

    Wang, Zhixiang; Jones, Gordon R; Spencer, Joseph W; Wang, Xiaohua; Rong, Mingzhe

    2017-03-06

    Contact erosion is one of the most crucial factors affecting the electrical service lifetime of high-voltage circuit breakers (HVCBs). On-line monitoring the contacts' erosion degree is increasingly in demand for the sake of condition based maintenance to guarantee the functional operation of HVCBs. A spectroscopic monitoring system has been designed based upon a commercial 245 kV/40 kA S F 6 live tank circuit breaker with copper-tungsten (28 wt % and 72 wt %) arcing contacts at atmospheric S F 6 pressure. Three optical-fibre based sensors are used to capture the time-resolved spectra of arcs. A novel approach using chromatic methods to process the time-resolved spectral signal has been proposed. The processed chromatic parameters have been interpreted to show that the time variation of spectral emission from the contact material and quenching gas are closely correlated to the mass loss and surface degradation of the plug arcing contact. The feasibility of applying this method to online monitoring of contact erosion is indicated.

  10. Monolithic laser diode array with one metalized sidewall

    DOEpatents

    Freitas, Barry L.; Skidmore, Jay A.; Wooldridge, John P.; Emanuel, Mark A.; Payne, Stephen A.

    2001-01-01

    A monolithic, electrically-insulating substrate that contains a series of notched grooves is fabricated. The substrate is then metalized so that only the top surface and one wall adjacent to the notch are metalized. Within the grooves is located a laser bar, an electrically-conductive ribbon or contact bar and an elastomer which secures/registers the laser bar and ribbon (or contact bar) firmly along the wall of the groove that is adjacent to the notch. The invention includes several embodiments for providing electrical contact to the corresponding top surface of the adjacent wall. In one embodiment, after the bar is located in the proper position, the electrically conductive ribbon is bent so that it makes electrical contact with the adjoining metalized top side of the heatsink.

  11. An optoelectronic framework enabled by low-dimensional phase-change films.

    PubMed

    Hosseini, Peiman; Wright, C David; Bhaskaran, Harish

    2014-07-10

    The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

  12. Electrical control of charged carriers and excitons in atomically thin materials

    NASA Astrophysics Data System (ADS)

    Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

    2018-02-01

    Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

  13. Resistive spectroscopy coupled with non-contacting oscillator for detecting discontinuous-continuous transition of metallic films

    NASA Astrophysics Data System (ADS)

    Nakamura, N.; Ogi, H.

    2017-09-01

    In spectroscopic measurements, one measures responses of specimens to oscillating fields (including electric, magnetic, and stress fields) at different frequencies for characterizing the samples. In contrast, we develop spectroscopy where the response (loss) is measured by changing the electric resistance, named the resistive spectroscopy. In the resistive spectroscopy, an energy-loss peak appears when the resistance is changed. We here apply it for studying the morphological change of thin films. When a metallic material is deposited on a substrate, the morphological transition from discontinuous islands to the continuous film occurs. It accompanies a drastic change in the resistance of the deposited material because of the transition from an insulator to a conductor. We find that the energy-loss peak appears at the transition moment during deposition of Ag. The resistive spectroscopy we develop uses no electrodes; it adopts the electric field generated by a piezoelectric material vibrating at its resonant frequency beneath the substrate. It is observed that the full width at half maximum (FWHM) of the resonance shows the peak during the deposition for high resistance substrates. The FWHM peak fails to be found for low resistance substrates, but it appears when the resonance frequency is increased. We propose an electrical-circuit model for explaining these observations.

  14. Electrical behavior of natural manganese dioxide (NMD)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gorgulho, H.F.; Fernandes, R.Z.D.; Pernaut, J.M.

    NMD samples from Brazil have been submitted to magnetic and particle size separations and characterized by X-ray diffraction and fluorescence and thermogravimetric analyses. Results showed that simple physical treatments can lead to more than 60% enriched MnO{sub 2} materials which could satisfy some electrochemical applications. The electrical properties of the samples conditioned as pressed pellets have been investigated by four-points direct current probe and impedance spectroscopy, varying the conditions of preparation and measurement. It is proposed that the higher frequency impedance is equivalent to the intrinsic electronic resistance of the MnO{sub 2} phases while at lower frequencies occurs an interphasemore » charge separation coupled with a possible ionic transport. The corresponding contact resistance depends on the particle size distribution of the material, the compactation pressure of pellets and the iron content of the materials. The interphase dielectric relaxation does not behave ideally; the depression of the impedance semicircles as shown in the Nyquist plane is assumed to be related to the roughness of the bulk interfaces. Recent developments have shown the possibility of using manganese oxides as reversible electrodes for battery or supercapacitor applications for electrical vehicle. In these perspectives it is important to study the electrical and electrochemical properties of NMD in order to estimate its suitability for this kind of applications.« less

  15. Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

    NASA Technical Reports Server (NTRS)

    Hall, J.; Chen, T. M.

    1991-01-01

    Virtually every device that makes use of the new ceramic superconductors will need normal conductor to superconductor contacts. The current-voltage and electrical noise characteristics of these contacts could become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quantity often used to characterize electrical noise, very closely followed an empirical relationship given by S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

  16. Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

    NASA Technical Reports Server (NTRS)

    Hall, J.; Chen, T. M.

    1990-01-01

    Virtually every device that makes use of the new ceramic superconductors will need normal conductor to supercondutor contacts. The current-voltage and electrical noise characteristics of these contacts could be become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quanity often used to characterize electrical noise, very closely followed an empirical relationship given by, S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

  17. Effects of Electrode Material on the Voltage of a Tree-Based Energy Generator.

    PubMed

    Hao, Zhibin; Wang, Guozhu; Li, Wenbin; Zhang, Junguo; Kan, Jiangming

    2015-01-01

    The voltage between a standing tree and its surrounding soil is regarded as an innovative renewable energy source. This source is expected to provide a new power generation system for the low-power electrical equipment used in forestry. However, the voltage is weak, which has caused great difficulty in application. Consequently, the development of a method to increase the voltage is a key issue that must be addressed in this area of applied research. As the front-end component for energy harvesting, a metal electrode has a material effect on the level and stability of the voltage obtained. This study aimed to preliminarily ascertain the rules and mechanisms that underlie the effects of electrode material on voltage. Electrodes of different materials were used to measure the tree-source voltage, and the data were employed in a comparative analysis. The results indicate that the conductivity of the metal electrode significantly affects the contact resistance of the electrode-soil and electrode-trunk contact surfaces, thereby influencing the voltage level. The metal reactivity of the electrode has no significant effect on the voltage. However, passivation of the electrode materials markedly reduces the voltage. Suitable electrode materials are demonstrated and recommended.

  18. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance. Plasma etching process of ZnO was carried out using a variety of plasma chemistries: CH4/H2-, C2H6/H 2-, Cl2-, IBr-, ICl-, BI3- and BBr3/Ar. High fidelity pattern transfer can be achieved with practical etch rate and very smooth surface in methane-based chemistries, although the sidewall is not completely vertical. Threshold energy as low as 60 +/- 20 eV for all plasma chemistries was achieved, confirming that etching is driven by ion-assisted mechanism over the whole range of ion energy. Ohmic contacts to p-CuCrO2 are examined using borides (CrB2 and W2B5), nitrides (TaN and ZrN) and a high temperature metal (Ir). These materials are used as a diffusion barrier in Ni/Au based contacts, i.e., Ni/Au/X/Ti/Au metallization scheme, where X is the refractory material. A minimum specific contact resistance of ˜ 5x10 -4 O.cm2 was achieved for the Ir-containing contacts after annealing at temperature of 500--800°C for 60s in O2 ambient. The presence of Ir diffusion barrier increase the thermal stability of the contacts by ˜ 200 °C compared to conventional Ni/Au contacts. By sharp contrast, the use of other refractory materials led to the poorer thermal stability, with the contact resistance increasing sharply above 400°C.

  19. Nontraditional, Safe, High Voltage Rechargeable Cells of Long Cycle Life.

    PubMed

    Braga, Maria Helena; M Subramaniyam, Chandrasekar; Murchison, Andrew J; Goodenough, John B

    2018-05-23

    A room-temperature all-solid-state rechargeable battery cell containing a tandem electrolyte consisting of a Li + -glass electrolyte in contact with a lithium anode and a plasticizer in contact with a conventional, low cost oxide host cathode was charged to 5 V versus lithium with a charge/discharge cycle life of over 23,000 cycles at a rate of 153 mA·g -1 of active material. A larger positive electrode cell with 329 cycles had a capacity of 585 mAh·g -1 at a cutoff of 2.5 V and a current of 23 mA·g -1 of the active material; the capacity rose with cycle number over the 329 cycles tested during 13 consecutive months. Another cell had a discharge voltage from 4.5 to 3.7 V over 316 cycles at a rate of 46 mA·g -1 of active material. Both the Li + -glass electrolyte and the plasticizer contain electric dipoles that respond to the internal electric fields generated during charge by a redistribution of mobile cations in the glass and by extraction of Li + from the active cathode host particles. The electric dipoles remain oriented during discharge to retain an internal electric field after a discharge. The plasticizer accommodates to the volume changes in the active cathode particles during charge/discharge cycling and retains during charge the Li + extracted from the cathode particles at the plasticizer/cathode-particle interface; return of these Li + to the active cathode particles during discharge only involves a displacement back across the plasticizer/cathode interface and transport within the cathode particle. A slow motion at room temperature of the electric dipoles in the Li + -glass electrolyte increases with time the electric field across the EDLC of the anode/Li + -glass interface to where Li + from the glass electrolyte is plated on the anode without being replenished from the cathode, which charges the Li + -glass electrolyte negative and consequently the glass side of the Li + -glass/plasticizer EDLC. Stripping back the Li + to the Li + -glass during discharge is enhanced by the negative charge in the Li + -glass. Since the Li + -glass is not reduced on contact with metallic lithium, no passivating interface layer contributes to a capacity fade; instead, the discharge capacity increases with cycle number as a result of dipole polarization in the Li + -glass electrolyte leading to a capacity increase of the Li + -glass/plasticizer EDLC. The storage of electric power by both faradaic electrochemical extraction/insertion of Li + in the cathode and electrostatic stored energy in the EDLCs provides a safe and fast charge and discharge with a long cycle life and a greater capacity than can be provided by the cathode host extraction/insertion reaction. The cell can be charged to a high voltage versus a lithium anode because of the added charge of the EDLCs.

  20. Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

    2015-08-15

    We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the materialmore » in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.« less

  1. Electrical conductivity of rigid polyurethane foam at high temperature

    NASA Astrophysics Data System (ADS)

    Johnson, R. T., Jr.

    1982-08-01

    The electrical conductivity of rigid polyurethane foam, used for electronic encapsulation, was measured during thermal decomposition to 3400 C. At higher temperatures the conductance continues to increase. With pressure loaded electrical leads, sample softening results in eventual contact between electrodes which produces electrical shorting. Air and nitrogen environments show no significant dependence of the conductivity on the atmosphere over the temperature range. The insulating characteristics of polyurethane foam below approx. 2700 C are similar to those for silicone based materials used for electronic case housings and are better than those for phenolics. At higher temperatures (greater than or equal to 2700 C) the phenolics appear to be better insulators to approx. 5000 C and the silicones to approx. 6000 C. It is concluded that the Sylgard 184/GMB encapsulant is a significantly better insulator at high temperature than the rigid polyurethane foam.

  2. Electric Motor Thermal Management R&D. Annual Report

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bennion, Kevin

    With the push to reduce component volumes, lower costs, and reduce weight without sacrificing performance or reliability, the challenges associated with thermal management increase for power electronics and electric motors. Thermal management for electric motors will become more important as the automotive industry continues the transition to more electrically dominant vehicle propulsion systems. The transition to more electrically dominant propulsion systems leads to higher-power duty cycles for electric drive systems. Thermal constraints place significant limitations on how electric motors ultimately perform, and as thermal management improves, there will be a direct trade-off between motor performance, efficiency, cost, and the sizingmore » of electric motors to operate within the thermal constraints. The goal of this research project is to support broad industry demand for data, analysis methods, and experimental techniques to improve and better understand motor thermal management. Work in FY15 focused on two areas related to motor thermal management: passive thermal performance and active convective cooling. Passive thermal performance emphasized the thermal impact of materials and thermal interfaces among materials within an assembled motor. The research tasks supported the publication of test methods and data for thermal contact resistances and direction-dependent thermal conductivity within an electric motor. Active convective cooling focused on measuring convective heat-transfer coefficients using automatic transmission fluid (ATF). Data for average convective heat transfer coefficients for direct impingement of ATF jets was published. Also, experimental hardware for mapping local-scale and stator-scale convective heat transfer coefficients for ATF jet impingement were developed.« less

  3. Electrode holder useful in a corrosion testing device

    DOEpatents

    Murphy, R.J. Jr.; Jamison, D.E.

    1986-08-19

    The present invention is directed to an apparatus and method for holding one or more test electrodes of precisely known exposed surface area. The present invention is particularly useful in a device for determining the corrosion properties of the materials from which the test electrodes have been formed. The present invention relates to a device and method for holding the described electrodes wherein the exposed surface area of the electrodes is only infinitesimally decreased. Further, in the present invention the exposed, electrically conductive surface area of the contact devices is small relative to the test electrode surface area. The holder of the present invention conveniently comprises a device for contacting and engaging each test electrode at two point contacts infinitesimally small in relation to the exposed surface area of the electrodes. 4 figs.

  4. Electrode holder useful in a corrosion testing device

    DOEpatents

    Murphy, Jr., Robert J.; Jamison, Dale E.

    1986-01-01

    The present invention is directed to an apparatus and method for holding one or more test electrodes of precisely known exposed surface area. The present invention is particularly useful in a device for determining the corrosion properties of the materials from which the test electrodes have been formed. The present invention relates to a device and method for holding the described electrodes wherein the exposed surface area of the electrodes is only infinitesimally decreased. Further, in the present invention the exposed, electrically conductive surface area of the contact devices is small relative to the test electrode surface area. The holder of the present invention conveniently comprises a device for contacting and engaging each test electrode at two point contacts infinitesimally small in relation to the exposed surface area of the electrodes.

  5. Evaluation of Contact Separation Force Testing as a Screening Methodology for Electrical Socket Contacts

    NASA Technical Reports Server (NTRS)

    Green, Chris; Greenwell, Chris; Brusse, jay; Krus, Dennis; Leidecker, Henning

    2009-01-01

    During system level testing intermittent and permanent open circuit failures of mated, crimp removable, electrical contact pairs were experienced. The root cause of the failures was determined to be low (but not zero) contact forces applied by the socket contact tines against the engaging pin. The low contact force reduces the effectiveness of the wiping action of the socket tines against the pin. The observed failure mode may be produced when insufficient wiping during mate, demate and small relative movement in use allows for the accumulation of debris or insulating films that electrically separate the contact pair. The investigation identified at least three manufacturing process control problems associated with the socket contacts that enabled shipment of contacts susceptible to developing low contact forces: (1) Improper heat treatment of the socket tines resulting in plastic rather than elastic behavior; (2) Overly thinned socket tines at their base resulting in reduced pin retention forces; (3) insufficient screening tests to identify parts susceptible to the aforementioned failure mechanisms. The results from an extensive screening program of socket contacts utilizing the industry standard contact separation force test procedures are described herein. The investigation shows this method to be capable of identifying initially weak sockets. However, sockets whose contact retention forces may degrade during use may not be screened out by pin retention testing alone. Further investigations are required to correlate low contact retention forces with increased electrical contact resistance in the presence of insulating films that may accumulate in the use environment.

  6. International Assessment of Carbon Nanotube Manufacturing and Applications

    DTIC Science & Technology

    2007-06-01

    oriented and long SWNT arrays obtained by the “fast-heating” growth process (Huang et al . 2004); the Fe/Mo catalyst nanoparticles are deposited ...and Cu layers for top-layer electrical contact. More recent work has been with gas-phase- deposited Ni and Co nanoparticles as catalysts (Sato et al ...22 3.6 Microstructure of MWCNT materials produced by a continuous process at Nano Carbon technologies

  7. The Dynamics of Oblate Drop Between Heterogeneous Plates Under Alternating Electric Field. Non-uniform Field

    NASA Astrophysics Data System (ADS)

    Kashina, M. A.; Alabuzhev, A. A.

    2018-02-01

    The dynamics of the incompressible fluid drop under the non-uniform electric field are considered. The drop is bounded axially by two parallel solid planes and the case of heterogeneous plates is investigated. The external electric field acts as an external force that causes motion of the contact line. We assume that the electric current is alternative current and the AC filed amplitude is a spatially non-uniform function. In equilibrium, the drop has the form of a circular cylinder. The equilibrium contact angle is 0.5 π. In order to describe this contact line motion the modified Hocking boundary condition is applied: the velocity of the contact line is proportional to the deviation of the contact angle and the speed of the fast relaxation processes, which frequency is proportional to twice the frequency of the electric field. The Hocking parameter depends on the polar angle, i.e. the coefficient of the interaction between the plate and the fluid (the contact line) is a function of the plane coordinates. This function is expanded in a series of the Laplace operator eigenfunctions.

  8. Electrostatic nanolithography in polymer materials: an alternative technique for nanostructures formation

    NASA Astrophysics Data System (ADS)

    Lyuksyutov, Sergei F.; Paramonov, Pavel B.; Sigalov, Grigori; Vaia, Richard A.; Juhl, Shane; Sancaktar, Erol

    2003-10-01

    The combination of localized softening attolitres (10^2 -10^4) of polymer film by Jule heating, extremely non-uniform electric field gradients to polarize and manipulate the soften polymer, and single step technique using conventional atomic force microscopy (AFM), establishes a new paradigm for nanolithography in a broad class of polymer materials allowing rapid (order of milliseconds) creation of raised and depressed nanostructures without external heating of a polymer film of AFM tip-film contact [1]. In this work we present recent studies of AFM-assisted electrostatic nanolithography (AFMEN) such as amplitude-modulated AFMEN, and the humidity influence on nanostructures formation during contact mode AFMEN. It has been shown that the aspect ratio of nanostructures grows on the order of magnitude (0.2), while the lateral dimensions of nanodots decreases down to 10-15 nm. [1] S.F. Lyuksyutov, R.A. Vaia, P.B. Paramonov, S. Juhl, L. Waterhouse, R.M. Ralich, G. Sigalov, and E. Sancaktar, "Electrostatic nanolithography in polymers using atomic force microscopy," Nature Materials 2, 468-472 (2003)

  9. Method and electrochemical cell for synthesis and treatment of metal monolayer electrocatalysts metal, carbon, and oxide nanoparticles ion batch, or in continuous fashion

    DOEpatents

    Adzic, Radoslav; Zhang, Junliang; Sasaki, Kotaro

    2015-04-28

    An apparatus and method for synthesis and treatment of electrocatalyst particles in batch or continuous fashion is provided. In one embodiment, the apparatus comprises a sonication bath and a two-compartment chamber submerged in the sonication bath. The upper and lower compartments are separated by a microporous material surface. The upper compartment comprises a cover and a working electrode (WE) connected to a Pt foil contact, with the foil contact connected to the microporous material. The upper chamber further comprises reference counter electrodes. The lower compartment comprises an electrochemical cell containing a solution of metal ions. In one embodiment, the method for synthesis of electrocatalysts comprises introducing a plurality of particles into the apparatus and applying sonication and an electrical potential to the microporous material connected to the WE. After the non-noble metal ions are deposited onto the particles, the non-noble metal ions are displaced by noble-metal ions by galvanic displacement.

  10. Intrinsic electrical properties of LuFe2O4

    NASA Astrophysics Data System (ADS)

    Lafuerza, Sara; García, Joaquín; Subías, Gloria; Blasco, Javier; Conder, Kazimierz; Pomjakushina, Ekaterina

    2013-08-01

    We here revisit the electrical properties of LuFe2O4, compound candidate for exhibiting multiferroicity. Measurements of dc electrical resistivity as a function of temperature, electric-field polarization measurements at low temperatures with and without magnetic field, and complex impedance as a function of both frequency and temperature were carried out in a LuFe2O4 single crystal, perpendicular and parallel to the hexagonal c axis, and in several ceramic polycrystalline samples. Resistivity measurements reveal that this material is a highly anisotropic semiconductor, being about two orders of magnitude more resistive along the c axis. The temperature dependence of the resistivity indicates a change in the conduction mechanism at TCO ≈ 320 K from thermal activation above TCO to variable range hopping below TCO. The resistivity values at room temperature are relatively small and are below 5000 Ω cm for all samples but we carried out polarization measurements at sufficiently low temperatures, showing that electric-field polarization curves are a straight line as expected for a paraelectric or antiferroelectric material. Furthermore, no differences are found in the polarization curves when a magnetic field is applied either parallel or perpendicular to the electric field. The analysis of the complex impedance data corroborates that the claimed colossal dielectric constant is a spurious effect mainly derived from the capacitance of the electrical contacts. Therefore, our data unequivocally evidence that LuFe2O4 is not ferroelectric.

  11. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States.

    PubMed

    Kim, Gwang-Sik; Kim, Seung-Hwan; Park, June; Han, Kyu Hyun; Kim, Jiyoung; Yu, Hyun-Yong

    2018-06-06

    The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS 2 ). For electrical contacts of multilayered MoS 2 , the Fermi level on the metal side is strongly pinned near the conduction-band edge of MoS 2 , which makes most MoS 2 -channel field-effect transistors (MoS 2 FETs) exhibit n-type transfer characteristics regardless of their source/drain (S/D) contact metals. In this work, SBH engineering is conducted to control the SBH of electrical top contacts of multilayered MoS 2 by introducing a metal-interlayer-semiconductor (MIS) structure which induces the Fermi-level unpinning by a reduction of metal-induced gap states (MIGS). An ultrathin titanium dioxide (TiO 2 ) interlayer is inserted between the metal contact and the multilayered MoS 2 to alleviate FLP and tune the SBH at the S/D contacts of multilayered MoS 2 FETs. A significant alleviation of FLP is demonstrated as MIS structures with 1 nm thick TiO 2 interlayers are introduced into the S/D contacts. Consequently, the pinning factor ( S) increases from 0.02 for metal-semiconductor (MS) contacts to 0.24 for MIS contacts, and the controllable SBH range is widened from 37 meV (50-87 meV) to 344 meV (107-451 meV). Furthermore, the Fermi-level unpinning effect is reinforced as the interlayer becomes thicker. This work widens the scope for modifying electrical characteristics of contacts by providing a platform to control the SBH through a simple process as well as understanding of the FLP at the electrical top contacts of multilayered MoS 2 .

  12. Carbon nanotube wires and cables: Near-term applications and future perspectives

    NASA Astrophysics Data System (ADS)

    Jarosz, Paul; Schauerman, Christopher; Alvarenga, Jack; Moses, Brian; Mastrangelo, Thomas; Raffaelle, Ryne; Ridgley, Richard; Landi, Brian

    2011-11-01

    Wires and cables are essential to modern society, and opportunities exist to develop new materials with reduced resistance, mass, and/or susceptibility to fatigue. This article describes how carbon nanotubes (CNTs) offer opportunities for integration into wires and cables for both power and data transmission due to their unique physical and electronic properties. Macroscopic CNT wires and ribbons are presently shown as viable replacements for metallic conductors in lab-scale demonstrations of coaxial, USB, and Ethernet cables. In certain applications, such as the outer conductor of a coaxial cable, CNT materials may be positioned to displace metals to achieve substantial benefits (e.g. reduction in cable mass per unit length (mass/length) up to 50% in some cases). Bulk CNT materials possess several unique properties which may offer advantages over metallic conductors, such as flexure tolerance and environmental stability. Specifically, CNT wires were observed to withstand greater than 200,000 bending cycles without increasing resistivity. Additionally, CNT wires exhibit no increase in resistivity after 80 days in a corrosive environment (1 M HCl), and little change in resistivity with temperature (<1% from 170-330 K). This performance is superior to conventional metal wires and truly novel for a wiring material. However, for CNTs to serve as a full replacement for metals, the electrical conductivity of CNT materials must be improved. Recently, the conductivity of a CNT wire prepared through simultaneous densification and doping has exceeded 1.3 × 106 S/m. This level of conductivity brings CNTs closer to copper (5.8 × 107 S/m) and competitive with some metals (e.g. gold) on a mass-normalized basis. Developments in manipulation of CNT materials (e.g. type enrichment, doping, alignment, and densification) have shown progress towards this goal. In parallel with efforts to improve bulk conductivity, integration of CNT materials into cabling architectures will require development in electrical contacting. Several methods for contacting bulk CNT materials to metals are demonstrated, including mechanical crimping and ultrasonic bonding, along with a method for reducing contact resistance by tailoring the CNT-metal interface via electroless plating. Collectively, these results summarize recent progress in CNT wiring technologies and illustrate that nanoscale conductors may become a disruptive technology in cabling designs.

  13. Carbon nanotube wires and cables: near-term applications and future perspectives.

    PubMed

    Jarosz, Paul; Schauerman, Christopher; Alvarenga, Jack; Moses, Brian; Mastrangelo, Thomas; Raffaelle, Ryne; Ridgley, Richard; Landi, Brian

    2011-11-01

    Wires and cables are essential to modern society, and opportunities exist to develop new materials with reduced resistance, mass, and/or susceptibility to fatigue. This article describes how carbon nanotubes (CNTs) offer opportunities for integration into wires and cables for both power and data transmission due to their unique physical and electronic properties. Macroscopic CNT wires and ribbons are presently shown as viable replacements for metallic conductors in lab-scale demonstrations of coaxial, USB, and Ethernet cables. In certain applications, such as the outer conductor of a coaxial cable, CNT materials may be positioned to displace metals to achieve substantial benefits (e.g. reduction in cable mass per unit length (mass/length) up to 50% in some cases). Bulk CNT materials possess several unique properties which may offer advantages over metallic conductors, such as flexure tolerance and environmental stability. Specifically, CNT wires were observed to withstand greater than 200,000 bending cycles without increasing resistivity. Additionally, CNT wires exhibit no increase in resistivity after 80 days in a corrosive environment (1 M HCl), and little change in resistivity with temperature (<1% from 170-330 K). This performance is superior to conventional metal wires and truly novel for a wiring material. However, for CNTs to serve as a full replacement for metals, the electrical conductivity of CNT materials must be improved. Recently, the conductivity of a CNT wire prepared through simultaneous densification and doping has exceeded 1.3 × 10(6) S/m. This level of conductivity brings CNTs closer to copper (5.8 × 10(7) S/m) and competitive with some metals (e.g. gold) on a mass-normalized basis. Developments in manipulation of CNT materials (e.g. type enrichment, doping, alignment, and densification) have shown progress towards this goal. In parallel with efforts to improve bulk conductivity, integration of CNT materials into cabling architectures will require development in electrical contacting. Several methods for contacting bulk CNT materials to metals are demonstrated, including mechanical crimping and ultrasonic bonding, along with a method for reducing contact resistance by tailoring the CNT-metal interface via electroless plating. Collectively, these results summarize recent progress in CNT wiring technologies and illustrate that nanoscale conductors may become a disruptive technology in cabling designs.

  14. Induction heaters used to heat subsurface formations

    DOEpatents

    Nguyen, Scott Vinh [Houston, TX; Bass, Ronald M [Houston, TX

    2012-04-24

    A heating system for a subsurface formation includes an elongated electrical conductor located in the subsurface formation. The electrical conductor extends between at least a first electrical contact and a second electrical contact. A ferromagnetic conductor at least partially surrounds and at least partially extends lengthwise around the electrical conductor. The electrical conductor, when energized with time-varying electrical current, induces sufficient electrical current flow in the ferromagnetic conductor such that the ferromagnetic conductor resistively heats to a temperature of at least about 300.degree. C.

  15. Interconnect assembly for an electronic assembly and assembly method therefor

    DOEpatents

    Gerbsch, Erich William

    2003-06-10

    An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

  16. Using Laser-Induced Thermal Voxels to Pattern Diverse Materials at the Solid-Liquid Interface.

    PubMed

    Zarzar, Lauren D; Swartzentruber, B S; Donovan, Brian F; Hopkins, Patrick E; Kaehr, Bryan

    2016-08-24

    We describe a high-resolution patterning approach that combines the spatial control inherent to laser direct writing with the versatility of benchtop chemical synthesis. By taking advantage of the steep thermal gradient that occurs while laser heating a metal edge in contact with solution, diverse materials comprising transition metals are patterned with feature size resolution nearing 1 μm. We demonstrate fabrication of reduced metallic nickel in one step and examine electrical properties and air stability through direct-write integration onto a device platform. This strategy expands the chemistries and materials that can be used in combination with laser direct writing.

  17. Using laser-induced thermal voxels to pattern diverse materials at the solid–liquid interface

    DOE PAGES

    Zarzar, Lauren D.; Swartzentruber, B. S.; Donovan, Brian F.; ...

    2016-08-05

    We describe a high-resolution patterning approach that combines the spatial control inherent to laser direct writing with the versatility of benchtop chemical synthesis. By taking advantage of the steep thermal gradient that occurs while laser heating a metal edge in contact with solution, diverse materials comprising transition metals are patterned with feature size resolution nearing 1 μm. We demonstrate fabrication of reduced metallic nickel in one step and examine electrical properties and air stability through direct-write integration onto a device platform. In conclusion, this strategy expands the chemistries and materials that can be used in combination with laser direct writing.

  18. Method of making a sodium sulfur battery

    DOEpatents

    Elkins, Perry E.

    1981-01-01

    A method of making a portion of a sodium sulfur battery is disclosed. The battery portion made is a portion of the container which defines the volume for the cathodic reactant materials which are sulfur and sodium polysulfide materials. The container portion is defined by an outer metal casing with a graphite liner contained therein, the graphite liner having a coating on its internal diameter for sealing off the porosity thereof. The steel outer container and graphite pipe are united by a method which insures that at the operating temperature of the battery, relatively low electrical resistance exists between the two materials because they are in intimate contact with one another.

  19. Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

    NASA Astrophysics Data System (ADS)

    Sammak, Amir; Qi, Lin; Nanver, Lis K.

    2015-12-01

    The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

  20. Electrical Characterization of Semiconductor Materials and Devices

    NASA Astrophysics Data System (ADS)

    Deen, M.; Pascal, Fabien

    Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

  1. Post passivation light trapping back contacts for silicon heterojunction solar cells.

    PubMed

    Smeets, M; Bittkau, K; Lentz, F; Richter, A; Ding, K; Carius, R; Rau, U; Paetzold, U W

    2016-11-10

    Light trapping in crystalline silicon (c-Si) solar cells is an essential building block for high efficiency solar cells targeting low material consumption and low costs. In this study, we present the successful implementation of highly efficient light-trapping back contacts, subsequent to the passivation of Si heterojunction solar cells. The back contacts are realized by texturing an amorphous silicon layer with a refractive index close to the one of crystalline silicon at the back side of the silicon wafer. As a result, decoupling of optically active and electrically active layers is introduced. In the long run, the presented concept has the potential to improve light trapping in monolithic Si multijunction solar cells as well as solar cell configurations where texturing of the Si absorber surfaces usually results in a deterioration of the electrical properties. As part of this study, different light-trapping textures were applied to prototype silicon heterojunction solar cells. The best path length enhancement factors, at high passivation quality, were obtained with light-trapping textures based on randomly distributed craters. Comparing a planar reference solar cell with an absorber thickness of 280 μm and additional anti-reflection coating, the short-circuit current density (J SC ) improves for a similar solar cell with light-trapping back contact. Due to the light trapping back contact, the J SC is enhanced around 1.8 mA cm -2 to 38.5 mA cm -2 due to light trapping in the wavelength range between 1000 nm and 1150 nm.

  2. Harvesting energy from low-frequency excitations through alternate contacts between water and two dielectric materials.

    PubMed

    Yu, Jian; Ma, Enze; Ma, Tianwei

    2017-12-07

    Recent studies have demonstrated the benefits of water-dielectric interfaces in electrostatic energy harvesting. Most efforts have been focused on extracting the kinetic energy from the motions of water drops on hydrophobic surfaces, and thus, the resulting schemes inherently prefer cases where the water drops move at a high speed, or vibrate at a high frequency. Here we report a method for directly harvesting ambient mechanical energy as electric potential energy through water droplets by making alternate contacts with CYTOP and PTFE thin films. Because CYTOP and PTFE acquire significantly different surface charge densities during contact with water, such a difference can be utilized to effectively generate electricity. We demonstrate this concept using prototype devices fabricated on silicon substrates with a simple procedure. In the experiments conducted, a water drop of 400 μL alone could generate a peak open-circuit voltage of 42 V under a 0.25 Hz vibration. Under a 2.5 Hz vibration, the peak open-circuit voltage reached 115 V under an external bias of 8 V. The demonstrated efficiency is orders of magnitude higher than those of existing devices of similar dimensions.

  3. Noise Spectroscopy in Strongly Correlated Oxides

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali M.

    Strongly correlated materials are an interesting class of materials, thanks to the novel electronic and magnetic phenomena they exhibit as a result of the interplay of various degrees of freedom. This gives rise to an array of potential applications, from Mott-FET to magnetic storage. Many experimental probes have been used to study phase transitions in strongly correlated oxides. Among these, resistance noise spectroscopy, together with conventional transport measurements, provides a unique viewpoint to understand the microscopic dynamics near the phase transitions in these oxides. In this thesis, utilizing noise spectroscopy and transport measurements, four different strongly correlated materials were studied: (1) neodymium nickel oxide (NdNiO 3) ultrathin films, (2) vanadium dioxide (VO2) microribbons, (3) copper vanadium bronze (CuxV2O 5) microribbons and (4) niobium triselenide (NbSe3) microribbons. Ultra thin films of rare-earth nickelates exhibit several temperature-driven phase transitions. In this thesis, we studied the metal-insulator and Neel transitions in a series of NdNiO3 films with different lattice mismatches. Upon colling down, the metal-insulator phase transition is accompanied by a structural (orthorohombic to monoclinic) and magnetic (paramagnetic to antiferromagnetic) transitions as well, making the problem more interesting and complex at the same time. The noise is of the 1/f type and is Gaussian in the high temperature phase, however deviations are seen in the low temperature phases. Below the metal-insulator transition, noise magnitude increases by orders of magnitude: a sign of inhomogeneous electrical conduction as result of phase separation. This is further assured by the non-Gaussian noise signature. At very low temperatures (T < 50 K), the noise behavior switches between Gaussian and non-Gaussian over several hours, possibly arising from dynamically competing ground states. VO2 is one of the most widely studied strongly correlated oxides and is important from the fundamental physics point of view and for applications. Its transition from a metal to an insulator (MIT) with simple application of voltage is quite interesting. For use in applications, e.g. transistors, it is very important to have a clear understanding of the MIT. Equally important is the question of whether the thermally- and electrically-driven transitions have the same origin. In this thesis, we tried to answer this question by utilizing three different tuning parameters: temperature, voltage bias and strain. Our results point to an unusual noise behavior in the high-temperature metallic phase, and provide valuable insight into the transport dynamics of this material. CuxV2O5 exhibit a metal-insulator transition and, more interestingly, a superconductivity transition. Unlike VO2, copper vanadium bronzes are much less studied and many questions are still open, including the possibility of charge ordering transition, just like in other members of the vanadium family. In this thesis, we studied this material and found evidences for charge ordering transitions and possibly other transitions as well. The last material, NbSe3, is a prototypical example of charge density wave systems, where Peierls transitions exist. Here, we study the effects of contacts on resistance noise in the 1D limit. The study aimed to confirm that the electric field threshold is sample length independent, to find out if there is a relation between contact separation and the noise generated and to explore the characteristics of the contact noise. The results confirm that the electric field threshold is independent of the sample length. It was also found that the separation between the contacts does not affect the noise. Finally, the contact noise is of the 1/f-type and has a Gaussian distribution. These results are timely for future device applications utilizing NbSe3.

  4. Electrical contact tool set station

    DOEpatents

    Byers, M.E.

    1988-02-22

    An apparatus is provided for the precise setting to zero of electrically conductive cutting tools used in the machining of work pieces. An electrically conductive cylindrical pin, tapered at one end to a small flat, rests in a vee-shaped channel in a base so that its longitudinal axis is parallel to the longitudinal axis of the machine's spindle. Electronic apparatus is connected between the cylindrical pin and the electrically conductive cutting tool to produce a detectable signal when contact between tool and pin is made. The axes of the machine are set to zero by contact between the cutting tool and the sides, end or top of the cylindrical pin. Upon contact, an electrical circuit is completed, and the detectable signal is produced. The tool can then be set to zero for that axis. Should the tool contact the cylindrical pin with too much force, the cylindrical pin would be harmlessly dislodged from the vee-shaped channel, preventing damage either to the cutting tool or the cylindrical pin. 5 figs.

  5. Zinc-chlorine battery plant system and method

    DOEpatents

    Whittlesey, Curtis C.; Mashikian, Matthew S.

    1981-01-01

    A zinc-chlorine battery plant system and method of redirecting the electrical current around a failed battery module. The battery plant includes a power conditioning unit, a plurality of battery modules connected electrically in series to form battery strings, a plurality of battery strings electrically connected in parallel to the power conditioning unit, and a bypass switch for each battery module in the battery plant. The bypass switch includes a normally open main contact across the power terminals of the battery module, and a set of normally closed auxiliary contacts for controlling the supply of reactants electrochemically transformed in the cells of the battery module. Upon the determination of a failure condition, the bypass switch for the failed battery module is energized to close the main contact and open the auxiliary contacts. Within a short time, the electrical current through the battery module will substantially decrease due to the cutoff of the supply of reactants, and the electrical current flow through the battery string will be redirected through the main contact of the bypass switch.

  6. Spectroscopic On-Line Monitoring of Cu/W Contacts Erosion in HVCBs Using Optical-Fibre Based Sensor and Chromatic Methodology

    PubMed Central

    Wang, Zhixiang; Jones, Gordon R.; Spencer, Joseph W.; Wang, Xiaohua; Rong, Mingzhe

    2017-01-01

    Contact erosion is one of the most crucial factors affecting the electrical service lifetime of high-voltage circuit breakers (HVCBs). On-line monitoring the contacts’ erosion degree is increasingly in demand for the sake of condition based maintenance to guarantee the functional operation of HVCBs. A spectroscopic monitoring system has been designed based upon a commercial 245 kV/40 kA SF6 live tank circuit breaker with copper–tungsten (28 wt % and 72 wt %) arcing contacts at atmospheric SF6 pressure. Three optical-fibre based sensors are used to capture the time-resolved spectra of arcs. A novel approach using chromatic methods to process the time-resolved spectral signal has been proposed. The processed chromatic parameters have been interpreted to show that the time variation of spectral emission from the contact material and quenching gas are closely correlated to the mass loss and surface degradation of the plug arcing contact. The feasibility of applying this method to online monitoring of contact erosion is indicated. PMID:28272295

  7. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contactmore » resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.« less

  8. New materials for polymer electrolyte membrane fuel cell current collectors

    NASA Astrophysics Data System (ADS)

    Hentall, Philip L.; Lakeman, J. Barry; Mepsted, Gary O.; Adcock, Paul L.; Moore, Jon M.

    Polymer Electrolyte Membrane Fuel cells for automotive applications need to have high power density, and be inexpensive and robust to compete effectively with the internal combustion engine. Development of membranes and new electrodes and catalysts have increased power significantly, but further improvements may be achieved by the use of new materials and construction techniques in the manufacture of the bipolar plates. To show this, a variety of materials have been fabricated into flow field plates, both metallic and graphitic, and single fuel cell tests were conducted to determine the performance of each material. Maximum power was obtained with materials which had lowest contact resistance and good electrical conductivity. The performance of the best material was characterised as a function of cell compression and flow field geometry.

  9. Quantum efficiency as a device-physics interpretation tool for thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Nagle, Timothy J.

    2007-12-01

    Thin-film solar cells made from CdTe and CIGS p-type absorbers are promising candidates for generating pollution-free electricity. The challenge faced by the thin-film photovoltaics (PV) community is to improve the electrical properties of devices, without straying from low-cost, industry-friendly techniques. This dissertation will focus on the use of quantum-efficiency (QE) measurements to deduce the device physics of thin-film devices, in the hope of improving electrical properties and efficiencies of PV materials. Photons which are absorbed, but not converted into electrical energy can modify the energy bands in the solar cell. Under illumination, photoconductivity in the CdS window layer can result in bands different from those in the dark. QE data presented here was taken under a variety of light-bias conditions. These results suggest that 0.10 sun of white-light bias incident on the CdS layer is usually sufficient to achieve accurate QE results. QE results are described by models based on carrier collection by drift and diffusion, and photon absorption. These models are sensitive to parameters such as carrier mobility and lifetime. Comparing calculated QE curves with experiments, it was determined that electron lifetimes in CdTe are less than 0.1 ns. Lifetime determinations also suggest that copper serves as a recombination center in CdTe. The spatial uniformity of QE results has been investigated with the LBIC apparatus, and several experiments are described which investigate cell uniformity. Electrical variations that occur in solar cells often occur in a nonuniform fashion, and can be detected with the LBIC apparatus. Studies discussed here include investigation of patterned deposition of Cu in back-contacts, the use of high-resistivity TCO layers to mitigate nonuniformity, optical effects, and local shunts. CdTe devices with transparent back contacts were also studied with LBIC, including those that received a strong bromine/dichrol/hydrazine (BDH) etch and those that received a weak bromine etch at the back contact. Back-side results showed improved uniformity in BDH-etched devices, attributed to better back contacts in these devices. In thin-absorber devices, the uniformity trend would likely extend to front-side measurements.

  10. Particle trap to sheath contact for a gas-insulated transmission line having a corrugated outer conductor

    DOEpatents

    Fischer, William H.; Cookson, Alan H.; Yoon, Kue H.

    1984-04-10

    A particle trap to outer elongated conductor or sheath contact for gas-insulated transmission lines. The particle trap to outer sheath contact of the invention is applicable to gas-insulated transmission lines having either corrugated or non-corrugated outer sheaths. The contact of the invention includes an electrical contact disposed on a lever arm which in turn is rotatably disposed on the particle trap and biased in a direction to maintain contact between the electrical contact and the outer sheath.

  11. Electrical conductivity of nanocomposites based on carbon nanotubes: a 3D multiscale modeling approach

    NASA Astrophysics Data System (ADS)

    Grabowski, Krzysztof; Zbyrad, Paulina; Staszewski, Wieslaw J.; Uhl, Tadeusz; Wiatr, Kazimierz; Packo, Pawel

    2016-04-01

    Remarkable electrical properties of carbon nanotubes (CNT) have lead to increased interest in studying CNT- based devices. Many of current researches are devoted to using all kinds of carbon nanomaterials in the con- struction of sensory elements. One of the most common applications is the development of high performance, large scale sensors. Due to the remarkable conductivity of CNT's such devices represent very high sensitivity. However, there are no sufficient tools for studying and designing such sensors. The main objective of this paper is to develop and validate a multiscale numerical model for a carbon nanotubes based sensor. The device utilises the change of electrical conductivity of a nanocomposite material under applied deformation. The nanocomposite consists of a number of CNTs dispersed in polymer matrix. The paper is devoted to the analysis of the impact of spatial distribution of carbon nanotubes in polymer matrix on electrical conductivity of the sensor. One of key elements is also to examine the impact of strain on electric charge ow in such anisotropic composite structures. In the following work a multiscale electro-mechanical model for CNT - based nanocomposites is proposed. The model comprises of two length scales, namely the meso- and the macro-scale for mechanical and electrical domains. The approach allows for evaluation of macro-scale mechanical response of a strain sensor. Electrical properties of polymeric material with certain CNT fractions were derived considering electrical properties of CNTs, their contact and the tunnelling effect.

  12. Embedded arrays of vertically aligned carbon nanotube carpets and methods for making them

    DOEpatents

    Kim, Myung Jong; Nicholas, Nolan Walker; Kittrell, W. Carter; Schmidt, Howard K.

    2015-06-30

    According to some embodiments, the present invention provides a system and method for supporting a carbon nanotube array that involve an entangled carbon nanotube mat integral with the array, where the mat is embedded in an embedding material. The embedding material may be depositable on a carbon nanotube. A depositable material may be metallic or nonmetallic. The embedding material may be an adhesive material. The adhesive material may optionally be mixed with a metal powder. The embedding material may be supported by a substrate or self-supportive. The embedding material may be conductive or nonconductive. The system and method provide superior mechanical and, when applicable, electrical, contact between the carbon nanotubes in the array and the embedding material. The optional use of a conductive material for the embedding material provides a mechanism useful for integration of carbon nanotube arrays into electronic devices.

  13. Molecular Dynamics Study of Poly And Monocrystalline CdS/CdTe Junctions and Cu Doped Znte Back Contacts for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Aguirre, Rodolfo, II

    Cadmium telluride (CdTe) is a material used to make solar cells because it absorbs the sunlight very efficiently and converts it into electricity. However, CdTe modules suffer from degradation of 1% over a period of 1 year. Improvements on the efficiency and stability can be achieved by designing better materials at the atomic scale. Experimental techniques to study materials at the atomic scale, such as Atomic Probe Tomography (APT) and Transmission Electron Microscope (TEM) are expensive and time consuming. On the other hand, Molecular Dynamics (MD) offers an inexpensive and fast computer simulation technique to study the growth evolution of materials with atomic scale resolution. In combination with advance characterization software, MD simulations provide atomistic visualization, defect analysis, structure maps, 3-D atomistic view, and composition profiles. MD simulations help to design better quality materials by predicting material behavior at the atomic scale. In this work, a new MD method to study several phenomena such as polycrystalline growth of CdTe-based materials, interdiffusion of atoms at interfaces, and deposition of a copper doped ZnTe back contact is established. Results are compared with experimental data found in the literature and experiments performed and shown to be in remarkably good agreement.

  14. Investigation on the properties of nano copper matrix composite via vacuum arc melting method

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Leng, Jinfeng; Wu, Qirui; Zhang, Shaochen; Teng, Xinying

    2017-10-01

    Copper and copper matrix composites (CMCs) are widely used as electrical contact materials in electrical switch systems due to their excellent electrical properties. Graphene has great mechanical, physical and electrical properties, which is competent as an attractive reinforcing material for fabricating CMCs. Therefore, graphene was added to CMCs to improve the mechanical properties. In this study, graphene-reinforced copper matrix composites (Gr/Cu composites) were obtained. The xGr/Cu (x  =  0, 0.1, 0.3 and 0.5 wt.%) composites were fabricated via the vacuum arc melting method and compared the performance of them. The mechanical properties and electrical properties were obtained by measuring the hardness and conductivity. The microstructure of Gr/Cu composites was observed by optical microscopy (OM) and scanning electron microscopy (SEM). With the addition of graphene from 0 wt.% to 0.5 wt.%, the densities of materials decreased from 97.0% to 95.7%. With the increasing of graphene content, the hardness of composites increased at beginning and then decreased. In this range of adding amount, the hardness of 0.3Gr/Cu composite was up to 66.8 HB and increased by 15.4% compared to Al2O3/Cu composites without graphene. With the addition of graphene powder, the international annealing copper standard IACS% of Gr/Cu composites decreased from 86.16 to 69.86. The range of decline and the percentage of decline range are middle and 18.9%, respectively.

  15. Non-Contact Thermal Properties Measurement with Low-Power Laser and IR Camera System

    NASA Technical Reports Server (NTRS)

    Hudson, Troy L.; Hecht, Michael H.

    2011-01-01

    As shown by the Phoenix Mars Lander's Thermal and Electrical Conductivity Probe (TECP), contact measurements of thermal conductivity and diffusivity (using a modified flux-plate or line-source heat-pulse method) are constrained by a number of factors. Robotic resources must be used to place the probe, making them unavailable for other operations for the duration of the measurement. The range of placement is also limited by mobility, particularly in the case of a lander. Placement is also subject to irregularities in contact quality, resulting in non-repeatable heat transfer to the material under test. Most important from a scientific perspective, the varieties of materials which can be measured are limited to unconsolidated or weakly-cohesive regolith materials, rocks, and ices being too hard for nominal insertion strengths. Accurately measuring thermal properties in the laboratory requires significant experimental finesse, involving sample preparation, controlled and repeatable procedures, and, practically, instrumentation much more voluminous than the sample being tested (heater plates, insulation, temperature sensors). Remote measurements (infrared images from orbiting spacecraft) can reveal composite properties like thermal inertia, but suffer both from a large footprint (low spatial resolution) and convolution of the thermal properties of a potentially layered medium. In situ measurement techniques (the Phoenix TECP is the only robotic measurement of thermal properties to date) suffer from problems of placement range, placement quality, occupation of robotic resources, and the ability to only measure materials of low mechanical strength. A spacecraft needs the ability to perform a non-contact thermal properties measurement in situ. Essential components include low power consumption, leveraging of existing or highly-developed flight technologies, and mechanical simplicity. This new in situ method, by virtue of its being non-contact, bypasses all of these problems. The use of photons to both excite and measure the thermal response of any surface material to a high resolution (estimated footprint = 10 square centimeters) is a generational leap in physical properties measurements. The proposed method consists of spot-heating the surface of a material with a low (less than 1 W) power laser. This produces a moderate (5-10 K) temperature increase in the material.

  16. Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

    PubMed

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

    2015-01-28

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

  17. Full 3D opto-electronic simulation tool for nanotextured solar cells (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Michallon, Jérôme; Collin, Stéphane

    2017-04-01

    Increasing efforts on the photovoltaics research have recently been devoted to material savings, leading to the emergence of new designs based on nanotextured and nanowire-based solar cells. The use of small absorber volumes, light-trapping nanostructures and unconventional carrier collection schemes (radial nanowire junctions, point contacts in planar structures,…) increases the impact of surfaces recombination and induces homogeneity in the photogenerated carrier concentrations. The investigation of their impacts on the device performances need to be addressed using full 3D coupled opto-electrical modeling. In this context, we have developed a new tool for full 3D opto-electrical simulation using the most advanced optical and electrical simulation techniques. We will present an overview of its simulation capabilities and the key issues that have been solved to make it fully operational and reliable. We will provide various examples of opto-electronic simulation of (i) nanostructured solar cells with localized contacts and (ii) nanowire solar cells. We will also show how opto-electronic simulation can be used to simulate light- and electron-beam induced current (LBIC/EBIC) experiments, targeting quantitative analysis of the passivation properties of surfaces.

  18. Effect of pulsed laser parameters on the corrosion limitation for electric connector coatings

    NASA Astrophysics Data System (ADS)

    Georges, C.; Semmar, N.; Boulmer-Leborgne, C.

    2006-12-01

    Materials used in electrical contact applications are usually constituted of multilayered compounds (e.g.: copper alloy electroplated with a nickel layer and finally by a gold layer). After the electro-deposition, micro-channels and pores within the gold layer allow undesirable corrosion of the underlying protection. In order to modify the gold-coating microstructure, a laser surface treatment was applied. The laser treatment suppressing porosity and smoothing the surface sealed the original open structure as a low roughness allows a good electrical contact. Corrosion tests were carried out in humid synthetic air containing three polluting gases. SEM characterization of cross-sections was performed to estimate the gold melting depth and to observe the modifications of gold structure obtained after laser treatment. The effects of the laser treatment were studied according to different surface parameters (roughness of the substrate and thickness of the gold layer) and different laser parameters (laser wavelength, laser fluence, pulse duration and number of pulses). A thermokinetic model was used to understand the heating and melting mechanism of the multilayered coating to optimize the process in terms of laser wavelength, energy and time of interaction.

  19. Experimental investigation of solid by-product as sensible heat storage material: Characterization and corrosion study

    NASA Astrophysics Data System (ADS)

    Ortega-Fernández, Iñigo; Faik, Abdessamad; Mani, Karthik; Rodriguez-Aseguinolaza, Javier; D'Aguanno, Bruno

    2016-05-01

    The experimental investigation of water cooled electrical arc furnace (EAF) slag used as filler material in the storage tank for sensible heat storage application was demonstrated in this study. The physicochemical and thermal properties of the tested slags were characterized by using X-ray diffraction, scanning electron microcopy, Fourier transform infrared spectroscopy, Raman spectroscopy and laser flash analysis, respectively. In addition, the chemical compatibility between slags and molten nitrate salt (60 wt. % NaNO3 and 40 wt. % KNO3) was investigated at 565 °C for 500 hrs. The obtained results were clearly demonstrated that the slags showed a good corrosion resistance in direct contact with molten salt at elevated temperature. The present study was clearly indicated that a low-cost filler material used in the storage tank can significantly reduce the overall required quantities of the relatively higher cost molten salt and consequently reduce the overall cost of the electricity production.

  20. Innovative Solutions Shockproof Protection In Occupations Associated With An Increased Risk Of Injury

    NASA Astrophysics Data System (ADS)

    Denisov, O. V.; Buligin, Y. I.; Ponomarev, A. E.; Ponomareva, I. A.; Lebedeva, V. V.

    2017-01-01

    An important direction in the development of the shockproof devices for occupations associated with an increased risk of injury is reducing their overall size with the preservation the ability of energy absorption. The fixture protection of large joints, with the brace in the coils of an elastic-plastic material with shape memory effect, can effectively protect people from injury and can be used in the domain of occupational safety to reduce injuries by shocks or jolts. In innovative anti-shock device as elastic-plastic material applied equiatomic Titanium-Nickel alloy which has acceptable temperature phase transitions that is necessary to restore shape. As an experienced model first approximation was adopted shockproof device, having in its composition a bandage in coils of elastic-plastic material with shape memory effect and with electric contacts at the ends. This solution allows the punches to plastically deform with the absorption of the impact energy, and then recover the original shape, including at the expense of electric heating.

  1. Carrier Injection and Scattering in Atomically Thin Chalcogenides

    NASA Astrophysics Data System (ADS)

    Li, Song-Lin; Tsukagoshi, Kazuhito

    2015-12-01

    Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

  2. Electrical and material properties of hydrothermally grown single crystal (111) UO2

    NASA Astrophysics Data System (ADS)

    Dugan, Christina L.; Peterson, George Glenn; Mock, Alyssa; Young, Christopher; Mann, J. Matthew; Nastasi, Michael; Schubert, Mathias; Wang, Lu; Mei, Wai-Ning; Tanabe, Iori; Dowben, Peter A.; Petrosky, James

    2018-04-01

    The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current-voltage I( V) and capacitance-voltage C( V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.

  3. Quantification of in-contact probe-sample electrostatic forces with dynamic atomic force microscopy.

    PubMed

    Balke, Nina; Jesse, Stephen; Carmichael, Ben; Okatan, M Baris; Kravchenko, Ivan I; Kalinin, Sergei V; Tselev, Alexander

    2017-01-04

    Atomic force microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe in the probe-sample junction in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can produce signals equivalent to a few pm of surface displacement. In combination with modeling, the measurements of the force were used to access the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junction can reach ca. 1 V nm -1 at a bias voltage of a few volts and is limited by non-ideality of the tip-sample contact. This field is sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids.

  4. A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

    NASA Astrophysics Data System (ADS)

    van't Erve, Olaf

    2014-03-01

    New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin-polarized contacts, a crucial requirement enabling future semiconductor spintronic devices, which rely upon two-terminal magnetoresistance, including spin-based transistors, logic and memory.

  5. Exploration to generate atmospheric pressure glow discharge plasma in air

    NASA Astrophysics Data System (ADS)

    Wenzheng, LIU; Chuanlong, MA; Shuai, ZHAO; Xiaozhong, CHEN; Tahan, WANG; Luxiang, ZHAO; Zhiyi, LI; Jiangqi, NIU; Liying, ZHU; Maolin, CHAI

    2018-03-01

    Atmospheric pressure glow discharge (APGD) plasma in air has high application value. In this paper, the methods of generating APGD plasma in air are discussed, and the characteristics of dielectric barrier discharge (DBD) in non-uniform electric field are studied. It makes sure that APGD in air is formed by DBD in alternating current electric field with using the absorbing electron capacity of electret materials to provide initial electrons and to end the discharge progress. Through designing electric field to form two-dimensional space varying electric field and three-dimensional space varying electric field, the development of electron avalanches in air-gap is suppressed effectively and a large space of APGD plasma in air is generated. Further, through combining electrode structures, a large area of APGD plasma in air is generated. On the other hand, by using the method of increasing the density of initial electrons, millimeter-gap glow discharge in atmospheric pressure air is formed, and a maximum gap distance between electrodes is 8 mm. By using the APGD plasma surface treatment device composed of contact electrodes, the surface modification of high polymer materials such as aramid fiber and polyester are studied and good effect of modifications is obtained. The present paper provides references for the researchers of industrial applications of plasma.

  6. Electrical Contacts to Individual Colloidal Semiconductor Nanorods

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Trudeau, Paul-Emile; Sheldon, Matt; Altoe, Virginia

    We report the results of charge transport studies on single CdTe nanocrystals contacted via evaporated Pd electrodes. Device charging energy, E{sub c}, monitored as a function of electrode separation drops suddenly at separations below {approx}55 nm. This drop can be explained by chemical changes induced by the metal electrodes. This explanation is corroborated by ensemble X-Ray photoelectron spectroscopy (XPS) studies of CdTe films as well as single particle measurements by transmission electron microscopy (TEM) and energy dispersive X-Rays (EDX). Similar to robust optical behavior obtained when Nanocrystals are coated with a protective shell, we find that a protective SiO2 layermore » deposited between the nanocrystal and the electrode prevents interface reactions and an associated drop in E{sub c,max}. This observation of interface reactivity and its effect on electrical properties has important implications for the integration of nanocrystals into conventional fabrication techniques and may enable novel nano-materials.« less

  7. Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

    PubMed

    Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

    2013-01-01

    When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

  8. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    NASA Astrophysics Data System (ADS)

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  9. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    DOEpatents

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  10. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    DOEpatents

    Ierna, William F.

    1987-01-01

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  11. Infrared thermography for condition monitoring - A review

    NASA Astrophysics Data System (ADS)

    Bagavathiappan, S.; Lahiri, B. B.; Saravanan, T.; Philip, John; Jayakumar, T.

    2013-09-01

    Temperature is one of the most common indicators of the structural health of equipment and components. Faulty machineries, corroded electrical connections, damaged material components, etc., can cause abnormal temperature distribution. By now, infrared thermography (IRT) has become a matured and widely accepted condition monitoring tool where the temperature is measured in real time in a non-contact manner. IRT enables early detection of equipment flaws and faulty industrial processes under operating condition thereby, reducing system down time, catastrophic breakdown and maintenance cost. Last three decades witnessed a steady growth in the use of IRT as a condition monitoring technique in civil structures, electrical installations, machineries and equipment, material deformation under various loading conditions, corrosion damages and welding processes. IRT has also found its application in nuclear, aerospace, food, paper, wood and plastic industries. With the advent of newer generations of infrared camera, IRT is becoming a more accurate, reliable and cost effective technique. This review focuses on the advances of IRT as a non-contact and non-invasive condition monitoring tool for machineries, equipment and processes. Various conditions monitoring applications are discussed in details, along with some basics of IRT, experimental procedures and data analysis techniques. Sufficient background information is also provided for the beginners and non-experts for easy understanding of the subject.

  12. Electric Motor Thermal Management R&D; NREL (National Renewable Energy Laboratory)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bennion, Kevin

    2015-06-09

    Thermal constraints place significant limitations on how electric motors ultimately perform. Without the ability to remove heat, the motor cannot operate without sacrificing performance, efficiency, and reliability. Finite element analysis and computational fluid dynamics modeling approaches are being increasingly utilized in the design and analysis of electric motors. As the models become more sophisticated, it is important to have detailed and accurate knowledge of both the passive thermal performance and the active cooling performance. In this work, we provide an overview of research characterizing both passive and active thermal elements related to electric motor thermal management. To better characterize themore » passive thermal performance, work is being performed to measure motor material thermal properties and thermal contact resistances. The active cooling performance of automatic transmission fluid (ATF) jets is also being measured to better understand the heat transfer coefficients of ATF impinging on motor copper windings.« less

  13. Electrical conduction of organic ultrathin films evaluated by an independently driven double-tip scanning tunneling microscope.

    PubMed

    Takami, K; Tsuruta, S; Miyake, Y; Akai-Kasaya, M; Saito, A; Aono, M; Kuwahara, Y

    2011-11-02

    The electrical transport properties of organic thin films within the micrometer scale have been evaluated by a laboratory-built independently driven double-tip scanning tunneling microscope, operating under ambient conditions. The two tips were used as point contact electrodes, and current in the range from 0.1 pA to 100 nA flowing between the two tips through the material can be detected. We demonstrated two-dimensional contour mapping of the electrical resistance on a poly(3-octylthiophene) thin films as shown below. The obtained contour map clearly provided an image of two-dimensional electrical conductance between two point electrodes on the poly(3-octylthiophene) thin film. The conductivity of the thin film was estimated to be (1-8) × 10(-6) S cm(-1). Future prospects and the desired development of multiprobe STMs are also discussed.

  14. The effect of mechanical stress on electric resistance of nanographite-epoxy composites

    NASA Astrophysics Data System (ADS)

    Vovchenko, L.; Lazarenko, A.; Matzui, L.; Zhuravkov, A.

    2012-03-01

    The in-plane electric resistance Ra of composite materials (CMs) thermoexfoliated graphite(TEG)-epoxy resin(ED) under compression along compacting C-axis has been investigated by four-probe method. TEG content was 5-75 wt%. It was shown that specimens prepared by cold pressing are denser and reveal lower values of electric resistivity in comparison with specimens prepared by pouring. It was found that compression of the specimens leads to plastic deformation of specimens (εpl) and essential irreversible decrease of electric resistance during the first cycle of loading (up to 50 MPa), especially for the poured specimens with low density. Within the proposed model the contact resistance Rk between graphite particles in CM has been evaluated and it was shown that it increased with the decrease in TEG content in CM and depends on compacting method of CMs and the dispersity of graphite filler.

  15. Conductive Paper with Antibody-Like Film for Electrical Readings of Biomolecules

    NASA Astrophysics Data System (ADS)

    Tavares, Ana P. M.; Ferreira, Nádia S.; Truta, Liliana A. A. N. A.; Sales, M. Goreti F.

    2016-05-01

    This work reports a novel way of producing an inexpensive substrate support to assemble a sensing film, designed for the electrical transduction of an intended biomolecule. The support uses cellulose paper as substrate, made hydrophobic with solid wax and covered by a home-made conductive ink having graphite as core material. The hydrophobicity of the paper was confirmed by contact angle measurements and the conductive ink composition was optimized with regard to its adhesion, conductivity, and thermal stability. This support was further modified targeting its application in quantitative analysis. Carnitine (CRT) was selected as target compound, a cancer biomarker. The recognition material consisted of an antibody-like receptor film for CRT, tailored on the support and prepared by electrically-sustained polymerization of 3,4-ethylenedioxythiophene (EDOT) or dodecylbenzenesulfonic acid (DBS). Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy analysis confirmed the presence of the polymeric film on the support, and the performance of the devices was extensively evaluated with regard to linear response ranges, selectivity, applicability, and reusability. Overall, the paper-based sensors offer simplicity of fabrication, low cost and excellent reusability features. The design could also be extended to other applications in electrical-based approaches to be used in point-of-care (POC).

  16. THERMO-ELECTRIC GENERATOR

    DOEpatents

    Jordan, K.C.

    1958-07-22

    The conversion of heat energy into electrical energy by a small compact device is descrtbed. Where the heat energy is supplied by a radioactive material and thermopIIes convert the heat to electrical energy. The particular battery construction includes two insulating discs with conductive rods disposed between them to form a circular cage. In the center of the cage is disposed a cup in which the sealed radioactive source is located. Each thermopile is formed by connecting wires from two adjacent rods to a potnt on an annular ring fastened to the outside of the cup, the ring having insulation on its surface to prevent electrica1 contact with the thermopiles. One advantage of this battery construction is that the radioactive source may be inserted after the device is fabricated, reducing the radiation hazard to personnel assembling the battery.

  17. A decade of occupational accidents due to direct or indirect electrical contact in the primary, secondary and tertiary sectors in Spain (2003-2012).

    PubMed

    Castillo-Rosa, Juan; Suárez-Cebador, Manuel; Rubio-Romero, Juan Carlos; Aguado, Jose Antonio

    2017-03-01

    Occupational accidents caused by electrical contact are a major concern worldwide due to their severe consequences. The study conducted is based on an analysis of the evolution of incidence rates and dependence between variables for 14,022 electrical accidents occurring in Spain between 2003 and 2012. The results show that electrical accidents as a whole are 3.6 times more likely to have severe consequences than the rest of the accidents in the country. This proportion is even nine times greater in the case of fatal accidents. They also confirm a significant relationship between the severity of this type of accidents and the economic sector in which they occur. On the other hand, there is a positive trend in the reduction of the incidence rate, especially in relation to direct contact, although unexpectedly the rate of accidents due to indirect contact is on the rise. Thus, preventing electrical occupational accidents requires efforts to guarantee adequate training adapted to the needs of workers in the various economic sectors. Furthermore, those responsible for safety should work to implement mechanisms to monitor and control compliance with efficient protective measures against electrical contact.

  18. Effect of Electric Field on the Wetting Behavior of Eutectic Gallium-Indium Alloys in Aqueous Environment

    NASA Astrophysics Data System (ADS)

    Yuan, Bo; He, Zhi-Zhu; Liu, Jing

    2018-02-01

    Room-temperature liquid metals have many intriguing properties that have not previously been fully understood. Among them, surface tension behaviors of such metals are especially critical in a group of newly emerging areas such as printed electronics, functional materials and soft machines, etc. This study is dedicated to clarifying the wettability of liquid metals on various substrate surfaces with varied roughness immersed in solutions when subject to an electric field. The contact angles of Ga75.5In24.5 in several typical liquids were comprehensively measured and interpreted, and were revealed to be affected by the components and concentration of the environmental solution. Meanwhile, the roughness of the substrates is also revealed to be an important parameter dominating the process. The dynamic wetting behaviors of liquid metal in aqueous environment under an electric field were quantified. The contact angle values of eutectic gallium-indium alloys (eGaIn) on titanium substrates with different roughness would lead to better electrowetting performances on rougher surfaces. In particular, using an electrical field to control the wetting status of liquid metal with the matching substrate have been illustrated, which would offer a practical way to flexibly control liquid metal-based functional devices working in an aqueous environment. Furthermore, Lippmann-Young's equation reveals the relationship between contact angle and applied voltage, explaining the excellent electrowetting property of eGaIn. The power law, R = αt β , was adopted to characterize the two-stage wetting process of eGaIn under different voltages. In the initial process, β ≈ 1/2 represents the complete wetting law, while the later one, β ≈ 1/10, meets with Tanner's law of a drop spontaneously spreading on a smooth surface.

  19. Electrical characterization of FIB processed metal layers for reliable conductive-AFM on ZnO microstructures

    NASA Astrophysics Data System (ADS)

    Pea, M.; Maiolo, L.; Giovine, E.; Rinaldi, A.; Araneo, R.; Notargiacomo, A.

    2016-05-01

    We report on the conductive-atomic force microscopy (C-AFM) study of metallic layers in order to find the most suitable configuration for electrical characterization of individual ZnO micro-pillars fabricated by focused ion beam (FIB). The electrical resistance between the probe tip and both as deposited and FIB processed metal layers (namely, Cr, Ti, Au and Al) has been investigated. Both chromium and titanium evidenced a non homogenous and non ohmic behaviour, non negligible scanning probe induced anodic oxidation associated to electrical measurements, and after FIB milling they exhibited significantly higher tip-sample resistance. Aluminium had generally a more apparent non conductive behaviour. Conversely, gold films showed very good tip-sample conduction properties being less sensitive to FIB processing than the other investigated metals. We found that a reliable C-AFM electrical characterization of ZnO microstructures obtained by FIB machining is feasible by using a combination of metal films as top contact layer. An Au/Ti bilayer on top of ZnO was capable to sustain the FIB fabrication process and to form a suitable ohmic contact to the semiconductor, allowing for reliable C-AFM measurement. To validate the consistency of this approach, we measured the resistance of ZnO micropillars finding a linear dependence on the pillar height, as expected for an ohmic conductor, and evaluated the resistivity of the material. This procedure has the potential to be downscaled to nanometer size structures by a proper choice of metal films type and thickness.

  20. Bus bar electrical feedthrough for electrorefiner system

    DOEpatents

    Williamson, Mark; Wiedmeyer, Stanley G; Willit, James L; Barnes, Laurel A; Blaskovitz, Robert J

    2013-12-03

    A bus bar electrical feedthrough for an electrorefiner system may include a retaining plate, electrical isolator, and/or contact block. The retaining plate may include a central opening. The electrical isolator may include a top portion, a base portion, and a slot extending through the top and base portions. The top portion of the electrical isolator may be configured to extend through the central opening of the retaining plate. The contact block may include an upper section, a lower section, and a ridge separating the upper and lower sections. The upper section of the contact block may be configured to extend through the slot of the electrical isolator and the central opening of the retaining plate. Accordingly, relatively high electrical currents may be transferred into a glovebox or hot-cell facility at a relatively low cost and higher amperage capacity without sacrificing atmosphere integrity.

  1. Compact fuel cell

    DOEpatents

    Jacobson, Craig; DeJonghe, Lutgard C.; Lu, Chun

    2010-10-19

    A novel electrochemical cell which may be a solid oxide fuel cell (SOFC) is disclosed where the cathodes (144, 140) may be exposed to the air and open to the ambient atmosphere without further housing. Current collector (145) extends through a first cathode on one side of a unit and over the unit through the cathode on the other side of the unit and is in electrical contact via lead (146) with housing unit (122 and 124). Electrical insulator (170) prevents electrical contact between two units. Fuel inlet manifold (134) allows fuel to communicate with internal space (138) between the anodes (154 and 156). Electrically insulating members (164 and 166) prevent the current collector from being in electrical contact with the anode.

  2. Method for forming metal contacts

    DOEpatents

    Reddington, Erik; Sutter, Thomas C; Bu, Lujia; Cannon, Alexandra; Habas, Susan E; Curtis, Calvin J; Miedaner, Alexander; Ginley, David S; Van Hest, Marinus Franciscus Antonius Maria

    2013-09-17

    Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

  3. Tuneable photonic device including an array of metamaterial resonators

    DOEpatents

    Brener, Igal; Wanke, Michael; Benz, Alexander

    2017-03-14

    A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

  4. The cathode material for a plasma-arc heater

    NASA Astrophysics Data System (ADS)

    Yelyutin, A. V.; Berlin, I. K.; Averyanov, V. V.; Kadyshevskii, V. S.; Savchenko, A. A.; Putintseva, R. G.

    1983-11-01

    The cathode of a plasma arc heater experiences a large thermal load. The temperature of its working surface, which is in contact with the plasma, reaches high values, as a result of which the electrode material is subject to erosion. Refractory metals are usually employed for the cathode material, but because of the severe erosion do not usually have a long working life. The most important electrophysical characteristic of the electrode is the electron work function. The use of materials with a low electron work function allows a decrease in the heat flow to the cathode, and this leads to an increase in its erosion resistance and working life. The electroerosion of certain materials employed for the cathode in an electric arc plasma generator in the process of reduction smelting of refractory metals was studied.

  5. Flexible Graphene Transistor Architecture for Optical Sensor Technology

    NASA Astrophysics Data System (ADS)

    Ordonez, Richard Christopher

    The unique electrical and optoelectronic properties of graphene allow tunable conductivity and broadband electromagnetic absorption that spans the ultraviolet and infrared regimes. However, in the current state-of-art graphene sensor architectures, junction resistance and doping concentration are predominant factors that affect signal strength and sensitivity. Unfortunately, graphene produces high contact resistances with standard electrode materials ( few kilo-ohms), therefore, signal is weak and large carrier concentrations are required to probe sensitivity. Moreover, the atomic thickness of graphene enables the potential for flexible electronics, but there has not been a successful graphene sensor architecture that demonstrates stable operation on flexible substrates and with minimal fabrication cost. In this study, the author explores a novel 3-terminal transistor architecture that integrates twodimensional graphene, liquid metal, and electrolytic gate dielectrics (LM-GFETs: Liquid Metal and Graphene Field-Effect Transistors ). The goal is to deliver a sensitive, flexible, and lightweight transistor architecture that will improve sensor technology and maneuverability. The reported high thermal conductivity of graphene provides potential for room-temperature thermal management without the need of thermal-electric and gas cooling systems that are standard in sensor platforms. Liquid metals provide a unique opportunity for conformal electrodes that maximize surface area contact, therefore, enable flexibility, lower contact resistance, and reduce damage to the graphene materials involved. Lastly, electrolytic gate dielectrics provide conformability and high capacitances needed for high on/off rations and electrostatic gating. Results demonstrated that with minimal fabrication steps the proposed flexible graphene transistor architecture demonstrated ambipolar current-voltage transfer characteristics that are comparable to the current state-of-the-art. An additional investigation demonstrated PN junction operation and the successful integration of the proposed architecture into an optoelectronic application with the use of semiconductor quantum dots in contact with the graphene material that acted as optical absorbers to increase detector gain. Applications that can benefit from such technology advancement include Nano-satellites (Nanosat), Underwater autonomous vehicles (UAV), and airborne platforms in which flexibility and sensitivity are critical parameters that must be optimized to increase mission duration and range.

  6. Synthesis and properties of silicon nanowire devices

    NASA Astrophysics Data System (ADS)

    Byon, Kumhyo

    Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed. The contributions of this study are to further understanding of the electrical transport properties of SiNWs and to provide optimized processes to fabricate emerging high performance nanoelectronic devices using SiNWs for future generation beyond bulk silicon.

  7. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    PubMed

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

  8. Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

    PubMed

    Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

    2016-11-24

    To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

  9. Field-effect P-N junction

    DOEpatents

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  10. Percussive Augmenter of Rotary Drills for Operating as a Rotary-Hammer Drill

    NASA Technical Reports Server (NTRS)

    Aldrich, Jack Barron (Inventor); Bar-Cohen, Yoseph (Inventor); Sherrit, Stewart (Inventor); Badescu, Mircea (Inventor); Bao, Xiaoqi (Inventor); Scott, James Samson (Inventor)

    2014-01-01

    A percussive augmenter bit includes a connection shaft for mounting the bit onto a rotary drill. In a first modality, an actuator percussively drives the bit, and an electric slip-ring provides power to the actuator while being rotated by the drill. Hammering action from the actuator and rotation from the drill are applied directly to material being drilled. In a second modality, a percussive augmenter includes an actuator that operates as a hammering mechanism that drives a free mass into the bit creating stress pulses that fracture material that is in contact with the bit.

  11. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

    PubMed Central

    Preciado, Edwin; Schülein, Florian J.R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

    2015-01-01

    Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

  12. Ultra High p-doping Material Research for GaN Based Light Emitters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

  13. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2014-11-04

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  14. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John [Menlo Park, CA

    2012-07-17

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  15. LL13-MatModelRadDetect-PD2Jf Final Report: Materials Modeling for High-Performance Radiation Detectors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lordi, Vincenzo

    The aims of this project are to enable rational materials design for select high-payoff challenges in radiation detection materials by using state-of-the-art predictive atomistic modeling techniques. Three specific high-impact challenges are addressed: (i) design and optimization of electrical contact stacks for TlBr detectors to stabilize temporal response at room-temperature; (ii) identification of chemical design principles of host glass materials for large-volume, low-cost, highperformance glass scintillators; and (iii) determination of the electrical impacts of dislocation networks in Cd 1-xZn xTe (CZT) that limit its performance and usable single-crystal volume. The specific goals are to establish design and process strategies to achievemore » improved materials for high performance detectors. Each of the major tasks is discussed below in three sections, which include the goals for the task and a summary of the major results, followed by a listing of publications that contain the full details, including details of the methodologies used. The appendix lists 12 conference presentations given for this project, including 1 invited talk and 1 invited poster.« less

  16. Materials challenges for repeatable RF wireless device reconfiguration with microfluidic channels

    NASA Astrophysics Data System (ADS)

    Griffin, Anthony S.; Sottos, Nancy R.; White, Scott R.

    2018-03-01

    Recently, adaptive wireless devices have utilized displacement of EGaIn within microchannels as an electrical switching mechanism to enable reconfigurable electronics. Device reconfiguration using EGaIn in microchannels overcomes many challenges encountered by more traditional reconfiguration mechanisms such as diodes and microelectromechanical systems (MEMS). Reconfiguration using EGaIn is severely limited by undesired permanent shorting due to retention of the liquid in microchannels caused by wetting and rapid oxide skin formation. Here, we investigate the conditions which prevent repeatable electrical switching using EGaIn in microchannels. Initial contact angle tests of EGaIn on epoxy surfaces demonstrate the wettability of EGaIn on flat surfaces. SEM cross-sections of microchannels reveal adhesion of EGaIn residue to channel walls. Micro-computed tomography (microCT) scans of provide volumetric measurements of EGaIn remaining inside channels after flow cycling. Non-wetting coatings are proposed as materials based strategy to overcome these issues in future work.

  17. Systems, methods, and software for determining spatially variable distributions of the dielectric properties of a heterogeneous material

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Farrington, Stephen P.

    Systems, methods, and software for measuring the spatially variable relative dielectric permittivity of materials along a linear or otherwise configured sensor element, and more specifically the spatial variability of soil moisture in one dimension as inferred from the dielectric profile of the soil matrix surrounding a linear sensor element. Various methods provided herein combine advances in the processing of time domain reflectometry data with innovations in physical sensing apparatuses. These advancements enable high temporal (and thus spatial) resolution of electrical reflectance continuously along an insulated waveguide that is permanently emplaced in contact with adjacent soils. The spatially resolved reflectance ismore » directly related to impedance changes along the waveguide that are dominated by electrical permittivity contrast due to variations in soil moisture. Various methods described herein are thus able to monitor soil moisture in profile with high spatial resolution.« less

  18. Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator.

    PubMed

    Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred

    2009-01-05

    We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.

  19. Method of making a sodium sulfur battery

    DOEpatents

    Elkins, P. E.

    1981-09-22

    A method of making a portion of a sodium sulfur battery is disclosed. The battery portion made is a portion of the container which defines the volume for the cathodic reactant materials which are sulfur and sodium polysulfide materials. The container portion is defined by an outer metal casing with a graphite liner contained therein, the graphite liner having a coating on its internal diameter for sealing off the porosity thereof. The steel outer container and graphite pipe are united by a method which insures that at the operating temperature of the battery, relatively low electrical resistance exists between the two materials because they are in intimate contact with one another. 3 figs.

  20. Insulating Foams Save Money, Increase Safety

    NASA Technical Reports Server (NTRS)

    2009-01-01

    Scientists at Langley Research Center created polyimide foam insulation for reusable cryogenic propellant tanks on the space shuttle. Meanwhile, a small Hialeah, Florida-based business, PolyuMAC Inc., was looking for advanced foams to use in the customized manufacturing of acoustical and thermal insulation. The company contacted NASA, licensed the material, and then the original inventors worked with the company's engineers to make a new material that was better for both parties. The new version, a high performance, flame retardant, flexible polyimide foam, is used for insulating NASA cryogenic propellant tanks and shows promise for use on watercraft, aircraft, spacecraft, electronics and electrical products, automobiles and automotive products, recreation equipment, and building and construction materials.

  1. Rigorous theory of graded thermoelectric converters including finite heat transfer coefficients

    NASA Astrophysics Data System (ADS)

    Gerstenmaier, York Christian; Wachutka, Gerhard

    2017-11-01

    Maximization of thermoelectric (TE) converter performance with an inhomogeneous material and electric current distribution has been investigated in previous literature neglecting thermal contact resistances to the heat reservoirs. The heat transfer coefficients (HTCs), defined as inverse thermal contact resistances per unit area, are thus infinite, whereas in reality, always parasitic thermal resistances, i.e., finite HTCs, are present. Maximization of the generated electric power and of cooling power in the refrigerator mode with respect to Seebeck coefficients and heat conductivity for a given profile of the material's TE figure of merit Z are mathematically ill-posed problems in the presence of infinite HTCs. As will be shown in this work, a fully self consistent solution is possible for finite HTCs, and in many respects, the results are fundamentally different. A previous theory for 3D devices will be extended to include finite HTCs and is applied to 1D devices. For the heat conductivity profile, an infinite number of solutions exist leading to the same device performance. Cooling power maximization for finite HTCs in 1D will lead to a strongly enhanced corresponding efficiency (coefficient of performance), whereas results with infinite HTCs lead to a non-monotonous temperature profile and coefficient of performance tending to zero for the prescribed heat conductivities. For maximized generated electric power, the corresponding generator efficiency is nearly a constant independent from the finite HTC values. The maximized efficiencies in the generator and cooling mode are equal to the efficiencies for the infinite HTC, provided that the corresponding powers approach zero. These and more findings are condensed in 4 theorems in the conclusions.

  2. Perovskites for Photovoltaics in the Spotlight: Photoinduced Physical Changes and Their Implications.

    PubMed

    Gottesman, Ronen; Zaban, Arie

    2016-02-16

    Organic-inorganic halide perovskites are in consensus to revolutionize the field of photovoltaics and optoelectronic devices due to their superior optical and electronic properties which are unprecedented in comparison to those of other solution processed semiconductors. These hybrid materials are used as light absorbers and also as charge carriers which makes them very versatile to be implemented and studied in a multitude of fields. Traditionally, the working paradigm in solar cells and optoelectronic devices' characterization has been that the properties of photovoltaic materials remain stable following illumination of varying times and intensities. However, recently there has been a growing number of reports on prolonged illumination-dependent physical changes in perovskite films and perovskite based devices. The changes are reversible and range from structural transformations and differences in optical characteristics, to an increase in optoelectronic properties and physical parameters. In this Account, we review the physical changes in three reported model systems which display changes under prolonged illumination of light intensities of ∼0.01-1 sun. The three systems are (i) a free-standing perovskite film on a glass substrate, (ii) a symmetrical system with nonselective electrical contacts, and (iii) a working perovskite solar cell (either a planar or a porous structure). We examine each model system and discuss its photoinduced physical changes and conclude with the implications on future experimentation design, data analysis, and characterization that involve organic-inorganic halide perovskites illumination. Since hybrid perovskites are considered to be mixed ionic-electronic conductors in nature, ions that migrate in the perovskite under electrical fields can influence its properties. Therefore, an important distinction is made between photoinduced effects and photo and electric field induced effects. Thus, photoinduced effects are designated as observed effects in illuminated free-standing films or symmetrical devices without selective contacts. In contrast, photo- and electric field induced effects are designated as observed effects under open-circuit potential or during voltage scanning (internal electrical field exists across the device). In the latter case, the two effects are superimposed and it is difficult to evaluate the relative influence of each one (light or electric field). However, we show that the magnitude and the importance of the photoinduced effect are substantial.

  3. Modeling and experimental investigation of thermal-mechanical-electric coupling dynamics in a standing wave ultrasonic motor

    NASA Astrophysics Data System (ADS)

    Li, Xiang; Yao, Zhiyuan; He, Yigang; Dai, Shichao

    2017-09-01

    Ultrasonic motor operation relies on high-frequency vibration of a piezoelectric vibrator and interface friction between the stator and rotor/slider, which can cause temperature rise of the motor under continuous operation, and can affect motor parameters and performance in turn. In this paper, an integral model is developed to study the thermal-mechanical-electric coupling dynamics in a typical standing wave ultrasonic motor. Stick-slip motion at the contact interface and the temperature dependence of material parameters of the stator are taken into account in this model. The elastic, piezoelectric and dielectric material coefficients of the piezoelectric ceramic, as a function of temperature, are determined experimentally using a resonance method. The critical parameters in the model are identified via measured results. The resulting model can be used to evaluate the variation in output characteristics of the motor caused by the thermal-mechanical-electric coupling effects. Furthermore, the dynamic temperature rise of the motor can be accurately predicted under different input parameters using the developed model, which will contribute to improving the reliable life of a motor for long-term running.

  4. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  5. Evidence for ion migration in hybrid perovskite solar cells with minimal hysteresis

    PubMed Central

    Calado, Philip; Telford, Andrew M.; Bryant, Daniel; Li, Xiaoe; Nelson, Jenny; O'Regan, Brian C.; Barnes, Piers R.F.

    2016-01-01

    Ion migration has been proposed as a possible cause of photovoltaic current–voltage hysteresis in hybrid perovskite solar cells. A major objection to this hypothesis is that hysteresis can be reduced by changing the interfacial contact materials; however, this is unlikely to significantly influence the behaviour of mobile ionic charge within the perovskite phase. Here, we show that the primary effects of ion migration can be observed regardless of whether the contacts were changed to give devices with or without significant hysteresis. Transient optoelectronic measurements combined with device simulations indicate that electric-field screening, consistent with ion migration, is similar in both high and low hysteresis CH3NH3PbI3 cells. Simulation of the photovoltage and photocurrent transients shows that hysteresis requires the combination of both mobile ionic charge and recombination near the perovskite-contact interfaces. Passivating contact recombination results in higher photogenerated charge concentrations at forward bias which screen the ionic charge, reducing hysteresis. PMID:28004653

  6. Understanding the Atomic Scale Mechanisms that Control the Attainment of Ultralow Friction and Wear in Carbon-Based Materials

    DTIC Science & Technology

    2016-01-16

    These characteristics far exceed those of well-lubricated interfaces of high performance steels and other expensive coatings. Despite this potential...the sharpness of these tips is a necessary characteristic to probe the high-stress wear regime. We also made progress in studying boron -doped UNCD... Boron -doping endows UNCD with electrical conductivity, which broadens its applications including for contact electrode applications, for example

  7. SCB initiator

    DOEpatents

    Bickes Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

    1994-11-01

    A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

  8. SCB initiator

    DOEpatents

    Bickes, Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

    1994-01-01

    A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

  9. High-precision Non-Contact Measurement of Creep of Ultra-High Temperature Materials for Aerospace

    NASA Technical Reports Server (NTRS)

    Rogers, Jan R.; Hyers, Robert

    2008-01-01

    For high-temperature applications (greater than 2,000 C) such as solid rocket motors, hypersonic aircraft, nuclear electric/thermal propulsion for spacecraft, and more efficient jet engines, creep becomes one of the most important design factors to be considered. Conventional creep-testing methods, where the specimen and test apparatus are in contact with each other, are limited to temperatures approximately 1,700 C. Development of alloys for higher-temperature applications is limited by the availability of testing methods at temperatures above 2000 C. Development of alloys for applications requiring a long service life at temperatures as low as 1500 C, such as the next generation of jet turbine superalloys, is limited by the difficulty of accelerated testing at temperatures above 1700 C. For these reasons, a new, non-contact creep-measurement technique is needed for higher temperature applications. A new non-contact method for creep measurements of ultra-high-temperature metals and ceramics has been developed and validated. Using the electrostatic levitation (ESL) facility at NASA Marshall Space Flight Center, a spherical sample is rotated quickly enough to cause creep deformation due to centrifugal acceleration. Very accurate measurement of the deformed shape through digital image analysis allows the stress exponent n to be determined very precisely from a single test, rather than from numerous conventional tests. Validation tests on single-crystal niobium spheres showed excellent agreement with conventional tests at 1985 C; however the non-contact method provides much greater precision while using only about 40 milligrams of material. This method is being applied to materials including metals and ceramics for non-eroding throats in solid rockets and next-generation superalloys for turbine engines. Recent advances in the method and the current state of these new measurements will be presented.

  10. Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Smith, L.L.; Davis, R.F.; Kim, M.J.

    1997-09-01

    The work described in this paper is part of a systematic study of ohmic contact strategies for GaN-based semiconductors. Au contacts exhibited ohmic behavior on p-GaN when annealed at high temperature. The specific contact resistivity ({rho}{sub c}) calculated from TLM measurements on Au/p-GaN contacts was 53{Omega}{center_dot}cm{sup 2} after annealing at 800{degree}C. Multilayer Au/Mg/Au/p-GaN contacts exhibited linear, ohmic current-voltage (I-V) behavior in the as-deposited condition with {rho}{sub c}=214{Omega}{center_dot}cm{sup 2}. The specific contact resistivity of the multilayer contact increased significantly after rapid thermal annealing (RTA) through 725{degree}C. Cross-sectional microstructural characterization of the Au/p-GaN contact system via high-resolution electron microscopy (HREM) revealed thatmore » interfacial secondary phase formation occurred during high-temperature treatments, which coincided with the improvement of contact performance. In the as-deposited multilayer Au/Mg/Au/p-GaN contact, the initial 32 nm Au layer was found to be continuous. However, Mg metal was found in direct contact with the GaN in many places in the sample after annealing at 725{degree}C for 15 s. The resultant increase in contact resistance is believed to be due to the barrier effect increased by the presence of the low work function Mg metal. {copyright} {ital 1997 Materials Research Society.}« less

  11. Method and apparatus for remote tube crevice detection by current and voltage probe resistance measurement

    DOEpatents

    Kikta, Thomas J.; Mitchell, Ronald D.

    1992-01-01

    A method and apparatus for determining the extent of contact between an electrically conducting tube and an electrically conductive tubesheet surrounding the tube, based upon the electrical resistance of the tube and tubesheet. A constant current source is applied to the interior of the electrically conducting tube by probes and a voltmeter is connected between other probes to measure the voltage at the point of current injection, which is inversely proportional to the amount of contact between the tube and tubesheet. Namely, the higher the voltage measured by the voltmeter, the less contact between the tube and tubesheet.

  12. Method and apparatus for remote tube crevice detection by current and voltage probe resistance measurement

    DOEpatents

    Kikta, T.J.; Mitchell, R.D.

    1992-11-24

    A method and apparatus for determining the extent of contact between an electrically conducting tube and an electrically conductive tubesheet surrounding the tube, based upon the electrical resistance of the tube and tubesheet. A constant current source is applied to the interior of the electrically conducting tube by probes and a voltmeter is connected between other probes to measure the voltage at the point of current injection, which is inversely proportional to the amount of contact between the tube and tubesheet. Namely, the higher the voltage measured by the voltmeter, the less contact between the tube and tubesheet. 4 figs.

  13. Electrochemical and kinetic studies of ultrafast laser structured LiFePO4 electrodes

    NASA Astrophysics Data System (ADS)

    Mangang, M.; Gotcu-Freis, P.; Seifert, H. J.; Pfleging, W.

    2015-03-01

    Due to a growing demand of cost-efficient lithium-ion batteries with an increased energy and power density as well as an increased life-time, the focus is set on intercalation cathode materials like LiFePO4. It has a high practical capacity, is environmentally friendly and has low material costs. However, its low electrical conductivity and low ionic diffusivity are major drawbacks for its use in electrochemical storage devices or electric vehicles. By adding conductive agents, the electrical conductivity can be enhanced. By increasing the surface of the cathode material which is in direct contact with the liquid electrolyte the lithium-ion diffusion kinetics can be improved. A new approach to increase the surface of the active material without changing the active particle packing density or the weight proportion of carbon black is the laser-assisted generation of 3D surface structures in electrode materials. In this work, ultrafast laser radiation was used to create a defined surface structure in LiFePO4 electrodes. It was shown that by using ultrashort laser pulses instead of nanosecond laser pulses, the ablation efficiency could be significantly increased. Furthermore, melting and debris formation were reduced. To investigate the diffusion kinetics, electrochemical methods such as cyclic voltammetry and galvanostatic intermittent titration technique were applied. It could be shown that due to a laser generated 3D structure, the lithium-ion diffusion kinetic, the capacity retention and cell life-time can be significantly improved.

  14. Electric vehicle drive train with contactor protection

    DOEpatents

    Konrad, Charles E.; Benson, Ralph A.

    1994-01-01

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor.

  15. Electric vehicle drive train with contactor protection

    DOEpatents

    Konrad, C.E.; Benson, R.A.

    1994-11-29

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor. 3 figures.

  16. Simulation and Analysis of Electric Field for the Disconnector Switch Incomplete Opening Position Based on 220kV GIS

    NASA Astrophysics Data System (ADS)

    Wang, Feifeng; Huang, Huimin; Su, Yi; Yan, Dandan; Lu, Yufeng; Xia, Xiaofei; Yang, Jian

    2018-05-01

    It has accounted for a large proportion of GIS equipment defects, which cause the disconnector switches to incomplete open-close position. Once opening operation is not in place, it will arouse continuous arcing between contacts to reduce insulation strength. Otherwise, the intense heat give rise to burn the contact, which has a severe effect on the safe operation of power grid. This paper analyzes some typical defection cases about the opening operation incomplete for disconnector switches of GIS. The COMSOL Multiphysics is applied to verify the influence on electric field distribution. The results show that moving contact out shield is 20 mm, the electric field distribution of the moving contact surface is uneven, and the maximum electric field value can reach 9.74 kV/mm.

  17. Experimental study on latent heat storage characteristics of W/O emulsion -Supercooling rate of dispersed water drops by direct contact heat exchange-

    NASA Astrophysics Data System (ADS)

    Morita, Shin-ichi; Hayamizu, Yasutaka; Horibe, Akihiko; Haruki, Naoto; Inaba, Hideo

    2013-04-01

    Recently, much attention has been paid to investigate the latent heat storage system. Using of ice heat storage system brings an equalization of electric power demand, because it will solved the electric -power-demand-concentration on day-time of summer by the air conditioning. The flowable latent heat storage material, Oil/Water type emulsion, microencapsulated latent heat material-water mixture or ice slurry, etc., is enable to transport the latent heat in a pipe. The flowable latent heat storage material can realize the pipe size reduction and system efficiency improvement. Supercooling phenomenon of the dispersed latent heat storage material in continuous phase brings the obstruction of latent heat storage. The latent heat storage rates of dispersed water drops in W/O (Water/Oil) emulsion are investigated experimentally in this study. The water drops in emulsion has the diameter within 3 ˜ 25μm, the averaged water drop diameter is 7.3μm and the standard deviation is 2.9μm. The direct contact heat exchange method is chosen as the phase change rate evaluation of water drops in W/O emulsion. The supercooled temperature and the cooling rate are set as parameters of this study. The evaluation is performed by comparison between the results of this study and the past research. The obtained experimental result is shown that the 35K or more degree from melting point brings 100% latent heat storage rate of W/O emulsion. It was clarified that the supercooling rate of dispersed water particles in emulsion shows the larger value than that of the bulk water.

  18. Real space mapping of ionic diffusion and electrochemical activity in energy storage and conversion materials

    DOEpatents

    Kalinin, Sergei V; Balke, Nina; Kumar, Amit; Dudney, Nancy J; Jesse, Stephen

    2014-05-06

    A method and system for probing mobile ion diffusivity and electrochemical reactivity on a nanometer length scale of a free electrochemically active surface includes a control module that biases the surface of the material. An electrical excitation signal is applied to the material and induces the movement of mobile ions. An SPM probe in contact with the surface of the material detects the displacement of mobile ions at the surface of the material. A detector measures an electromechanical strain response at the surface of the material based on the movement and reactions of the mobile ions. The use of an SPM tip to detect local deformations allows highly reproducible measurements in an ambient environment without visible changes in surface structure. The measurements illustrate effective spatial resolution comparable with defect spacing and well below characteristic grain sizes of the material.

  19. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

    PubMed

    Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

    2015-11-03

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  20. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    PubMed Central

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

  1. The Charging Events in Contact-Separation Electrification.

    PubMed

    Musa, Umar G; Cezan, S Doruk; Baytekin, Bilge; Baytekin, H Tarik

    2018-02-06

    Contact electrification (CE)-charging of surfaces that are contacted and separated, is a common phenomenon, however it is not completely understood yet. Recent studies using surface imaging techniques and chemical analysis revealed a 'spatial' bipolar distribution of charges at the nano dimension, which made a paradigm shift in the field. However, such analyses can only provide information about the charges that remained on the surface after the separation, providing limited information about the actual course of the CE event. Tapping common polymers and metal surfaces to each other and detecting the electrical potential produced on these surfaces 'in-situ' in individual events of contact and separation, we show that, charges are generated and transferred between the surfaces in both events; the measured potential is bipolar in contact and unipolar in separation. We show, the 'contact-charges' on the surfaces are indeed the net charges that results after the separation process, and a large contribution to tribocharge harvesting comes, in fact, from the electrostatic induction resulting from the generated CE charges. Our results refine the mechanism of CE providing information for rethinking the conventional ranking of materials' charging abilities, charge harvesting, and charge prevention.

  2. Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    A design modification and a fabrication process that implements the modification have been conceived to solve two problems encountered in the development of back-illuminated, back-sidethinned complementary metal oxide/ semiconductor (CMOS) image-detector integrated circuits. The two problems are (1) how to form metal electrical-contact pads on the back side that are electrically connected through the thickness in proper alignment with electrical contact points on the front side and (2) how to provide alignment keys on the back side to ensure proper registration of backside optical components (e.g., microlenses and/or color filters) with the front-side pixel pattern. The essence of the design modification is to add metal plugs that extend from the desired front-side locations through the thickness and protrude from the back side of the substrate. The plugs afford the required front-to-back electrical conduction, and the protrusions of the plugs serve as both the alignment keys and the bases upon which the back-side electrical-contact pads can be formed.

  3. On Ni/Au Alloyed Contacts to Mg-Doped GaN

    NASA Astrophysics Data System (ADS)

    Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

    2018-01-01

    Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

  4. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  5. Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

    PubMed

    Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

    2018-05-29

    Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

  6. Investigating the wetting behavior of a surface with periodic reentrant structures using integrated microresonators

    NASA Astrophysics Data System (ADS)

    Klingel, S.; Oesterschulze, E.

    2017-08-01

    The apparent contact angle is frequently used as an indicator of the wetting state of a surface in contact with a liquid. However, the apparent contact angle is subject to hysteresis that depends furthermore strongly on both the material properties and the roughness and structure of the sample surface. In this work, we show that integrated microresonators can be exploited to determine the wetting state by measuring both the frequency shift caused by the hydrodynamic mass of the liquid and the change in the quality factor as a result of damping. For this, we integrated electrically driven hybrid bridge resonators (HBRs) into a periodically structured surface intended for wetting experiments. We could clearly differentiate between the Wenzel state and the Cassie-Baxter state because the resonant frequency and quality factor of the HBR changed by over 35% and 40%, respectively. This offers the capability to unambiguously distinguish between the different wetting states.

  7. Quantification of in-contact probe-sample electrostatic forces with dynamic atomic force microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Balke, Nina Wisinger; Jesse, Stephen; Carmichael, Ben D.

    Here, atomic force microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe in the probe-sample junction in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can produce signals equivalent to a few pm of surface displacement. Inmore » combination with modeling, the measurements of the force were used to access the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junction can reach ca. 1 V nm –1 at a bias voltage of a few volts and is limited by non-ideality of the tip-sample contact. This field is sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids.« less

  8. Quantification of In-Contact Probe-Sample Electrostatic Forces with Dynamic Atomic Force Microscopy.

    PubMed

    Balke, Nina; Jesse, Stephen; Carmichael, Ben; Okatan, M; Kravchenko, Ivan; Kalinin, Sergei; Tselev, Alexander

    2016-12-13

    Atomic Force Microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe in the probe-sample junction in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can produce signals equivalent to a few pm of surface displacement. In combination with modeling, the measurements of the force were used to access the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junction can reach ca. 1 V/nm at a bias voltage of a few volts and is limited by non-ideality of the tip-sample contact. This field is sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids. Copyright 2016 IOP Publishing Ltd.

  9. Quantification of in-contact probe-sample electrostatic forces with dynamic atomic force microscopy

    DOE PAGES

    Balke, Nina Wisinger; Jesse, Stephen; Carmichael, Ben D.; ...

    2017-01-04

    Here, atomic force microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe in the probe-sample junction in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can produce signals equivalent to a few pm of surface displacement. Inmore » combination with modeling, the measurements of the force were used to access the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junction can reach ca. 1 V nm –1 at a bias voltage of a few volts and is limited by non-ideality of the tip-sample contact. This field is sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids.« less

  10. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    NASA Technical Reports Server (NTRS)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  11. Multiple imaging mode X-ray computed tomography for distinguishing active and inactive phases in lithium-ion battery cathodes

    NASA Astrophysics Data System (ADS)

    Komini Babu, Siddharth; Mohamed, Alexander I.; Whitacre, Jay F.; Litster, Shawn

    2015-06-01

    This paper presents the use of nanometer scale resolution X-ray computed tomography (nano-CT) in the three-dimensional (3D) imaging of a Li-ion battery cathode, including the separate volumes of active material, binder plus conductive additive, and pore. The different high and low atomic number (Z) materials are distinguished by sequentially imaging the lithium cobalt oxide electrode in absorption and then Zernike phase contrast modes. Morphological parameters of the active material and the additives are extracted from the 3D reconstructions, including the distribution of contact areas between the additives and the active material. This method could provide a better understanding of the electric current distribution and structural integrity of battery electrodes, as well as provide detailed geometries for computational models.

  12. Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

    NASA Astrophysics Data System (ADS)

    Jeong, Seonghoon; Lee, Sung-Nam; Kim, Hyunsoo

    2018-01-01

    The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/ p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10-3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

  13. Solar cells with low cost substrates and process of making same

    DOEpatents

    Mitchell, Kim W.

    1984-01-01

    A solar cell having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron.sup.2. The intermediate recrystallized film has a grain size in the range of from about 10 microns.sup.2 to about 10,000 microns.sup.2 and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns.sup.2. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

  14. Solar cells with low cost substrates, process of making same and article of manufacture

    DOEpatents

    Mitchell, K.W.

    A solar cell is disclosed having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron/sup 2/. The intermediate recrystallized film has a grain size in the range of from about 10 microns/sup 2/ to about 10,000 microns/sup 2/ and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns/sup 2/. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

  15. Apparatus and methods of measuring minority carrier lifetime using a liquid probe

    DOEpatents

    Li, Jian

    2016-04-12

    Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

  16. Linking Microstructural Evolution and Tribology in Metallic Contacts

    NASA Astrophysics Data System (ADS)

    Chandross, Michael; Cheng, Shengfeng; Argibay, Nicolas

    Tribologists rely on phenomenological models to describe the seemingly disjointed steady-state regimes of metal wear. Pure metals such as gold - frequently used in electrical contacts - exhibit high friction and wear. In contrast, nanocrystalline metals often show much lower friction and wear. The engineering community has generally used a phenomenological connection between hardness and friction/wear to explain this macroscale response and guide designs. We present results of recent simulations and experiments that demonstrate a general framework for connecting materials properties (i.e. microstructural evolution) to tribological response. We present evidence that competition between grain refinement (from cold working), grain coarsening (from stress-induced grain growth), and wear (delamination and plowing) can be used to describe transient and steady state tribological behavior of metals, alloys and composites. We explore the seemingly disjointed steady-state friction regimes of metals and alloys, with a goal of elucidating the structure-property relationships, allowing for the engineering of tribological materials and contacts based on the kinetics of grain boundary motion. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  17. Harvesting dissipated energy with a mesoscopic ratchet

    NASA Astrophysics Data System (ADS)

    Roche, B.; Roulleau, P.; Jullien, T.; Jompol, Y.; Farrer, I.; Ritchie, D. A.; Glattli, D. C.

    2015-04-01

    The search for new efficient thermoelectric devices converting waste heat into electrical energy is of major importance. The physics of mesoscopic electronic transport offers the possibility to develop a new generation of nanoengines with high efficiency. Here we describe an all-electrical heat engine harvesting and converting dissipated power into an electrical current. Two capacitively coupled mesoscopic conductors realized in a two-dimensional conductor form the hot source and the cold converter of our device. In the former, controlled Joule heating generated by a voltage-biased quantum point contact results in thermal voltage fluctuations. By capacitive coupling the latter creates electric potential fluctuations in a cold chaotic cavity connected to external leads by two quantum point contacts. For unequal quantum point contact transmissions, a net electrical current is observed proportional to the heat produced.

  18. Low inductance busbar assembly

    DOEpatents

    Holbrook, Meghan Ann

    2010-09-21

    A busbar assembly for electrically coupling first and second busbars to first and second contacts, respectively, on a power module is provided. The assembly comprises a first terminal integrally formed with the first busbar, a second terminal integrally formed with the second busbar and overlapping the first terminal, a first bridge electrode having a first tab electrically coupled to the first terminal and overlapping the first and second terminals, and a second tab electrically coupled to the first contact, a second bridge electrode having a third tab electrically coupled to the second terminal, and overlapping the first and second terminals and the first tab, and a fourth tab electrically coupled to the second contact, and a fastener configured to couple the first tab to the first terminal, and the third tab to the second terminal.

  19. Characterization and optimization of polycrystalline Si70%Ge30% for surface micromachined thermopiles in human body applications

    NASA Astrophysics Data System (ADS)

    Wang, Ziyang; Fiorini, Paolo; Leonov, Vladimir; Van Hoof, Chris

    2009-09-01

    This paper presents the material characterization methods, characterization results and the optimization scheme for polycrystalline Si70%Ge30% (poly-SiGe) from the perspective of its application in a surface micromachined thermopile. Due to its comparative advantages, such as lower thermal conductivity and ease of processing, over other materials, poly-SiGe is chosen to fabricate a surface micromachined thermopile and eventually a wearable thermoelectric generator (TEG) to be used on a human body. To enable optimal design of advanced thermocouple microstructures, poly-SiGe sample materials prepared by two different techniques, namely low-pressure chemical vapor deposition (LPCVD) with in situ doping and rapid thermal chemical vapor deposition (RTCVD) with ion implantation, have been characterized. Relevant material properties, including electrical resistivity, Seebeck coefficient, thermal conductivity and specific contact resistance, have been reported. For the determination of thermal conductivity, a novel surface-micromachined test structure based on the Seebeck effect is designed, fabricated and measured. Compared to the traditional test structures, it is more advantageous for sample materials with a relatively large Seebeck coefficient, such as poly-SiGe. Based on the characterization results, a further optimization scheme is suggested to allow independent respective optimization of the figure of merit and the specific contact resistance.

  20. Modelling of a Double-Track Railway Contact System Electric Field Intensity

    NASA Astrophysics Data System (ADS)

    Belinsky, Stanislav; Khanzhina, Olga; Sidorov, Alexander

    2017-12-01

    Working conditions of personnel that serves contact system (CS) are affected by factors including health and safety, security and working hours (danger of rolling stock accidents, danger of electric shock strokes, work at height, severity and tension of work, increased noise level, etc.) Low frequency electromagnetic fields as part of both electric and magnetic fields are among of the most dangerous and harmful factors. These factors can affect not only the working personnel, but also a lot of people, who do not work with the contact system itself, but could be influenced by electromagnetic field as the result of their professional activity. People, who use public transport or live not far from the electrified lines, are endangered by these factors as well. There are results of the theoretical researches in which low frequency electric fields of railway contact system were designed with the use of mathematical and computer modelling. Significant features of electric field distribution near double-track railway in presence or absence of human body were established. The studies showed the dependence of low frequency electric field parameters on the distance to the track axis, height, and presence or absence of human body. The obtained data were compared with permissible standards established in the Russian Federation and other countries with advanced electrified railway system. Evaluation of low frequency electric fields harmful effect on personnel is the main result of this work. It is also established, that location of personnel, voltage and current level, amount of tracks and other factors influence electric fields of contact systems.

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