Grid regulation services for energy storage devices based on grid frequency

DOEpatents

Pratt, Richard M.; Hammerstrom, Donald J.; Kintner-Meyer, Michael C. W.; Tuffner, Francis K.

2017-09-05

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

Grid regulation services for energy storage devices based on grid frequency

DOEpatents

Pratt, Richard M; Hammerstrom, Donald J; Kintner-Meyer, Michael C.W.; Tuffner, Francis K

2014-04-15

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

Silicon Nanowire-Based Devices for Gas-Phase Sensing

PubMed Central

Cao, Anping; Sudhölter, Ernst J.R.; de Smet, Louis C.P.M.

2014-01-01

Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed. PMID:24368699

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

NASA Astrophysics Data System (ADS)

Ho, Hsiang-Hsi; Lin, Chun-Lung; Tsai, Wei-Che; Hong, Liang-Zheng; Lyu, Cheng-Han; Hsu, Hsun-Feng

2018-01-01

We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.

Electrical characteristics of Graphene based Field Effect Transistor (GFET) biosensor for ADH detection

NASA Astrophysics Data System (ADS)

Selvarajan, Reena Sri; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop

2017-08-01

First pristine graphene was successfully produced by mechanical exfoliation and electrically characterized in 2004 by Andre Geim and Konstantin Novoselov at University of Manchester. Since its discovery in 2004, graphene also known as `super' material that has enticed many researchers and engineers to explore its potential in ultrasensitive detection of analytes in biosensing applications. Among myriad reported sensors, biosensors based on field effect transistors (FETs) have attracted much attention. Thus, implementing graphene as conducting channel material hastens the opportunities for production of ultrasensitive biosensors for future device applications. Herein, we have reported electrical characteristics of graphene based field effect transistor (GFET) for ADH detection. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). Electrical characteristics comprising of transfer and output characteristics curves are reported in this study. The device shows ambipolar curve and achieved a minimum conductivity of 0.23912 e5A at Dirac point. However, the curve shifts to the left and introduces significant changes in the minimum conductivity as drain voltage is increased. Output characteristics of GFET exhibits linear Id - Vd dependence characteristics for gate voltage ranging from 0 to 1.5 V. In addition, behavior of electrical transport through GFET was analyzed for various simulation temperatures. It clearly proves that the electrical transport in GFET is dependent on the simulation temperature as it may vary the maximum resistance in channel of the device. Therefore, this unique electrical characteristics of GFET makes it as a promising candidate for ultrasensitive detection of small biomolecules such as ADH in biosensing applications.

Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers

NASA Astrophysics Data System (ADS)

Fathololoumi, S.; Dupont, E.; Wasilewski, Z. R.; Chan, C. W. I.; Razavipour, S. G.; Laframboise, S. R.; Huang, Shengxi; Hu, Q.; Ban, D.; Liu, H. C.

2013-03-01

We experimentally investigated the effect of oscillator strength (radiative transition diagonality) on the performance of resonant phonon-based terahertz quantum cascade lasers that have been optimized using a simplified density matrix formalism. Our results show that the maximum lasing temperature (Tmax) is roughly independent of laser transition diagonality within the lasing frequency range of the devices under test (3.2-3.7 THz) when cavity loss is kept low. Furthermore, the threshold current can be lowered by employing more diagonal transition designs, which can effectively suppress parasitic leakage caused by intermediate resonance between the injection and the downstream extraction levels. Nevertheless, the current carrying capacity through the designed lasing channel in more diagonal designs may sacrifice even more, leading to electrical instability and, potentially, complete inhibition of the device's lasing operation. We propose a hypothesis based on electric-field domain formation and competition/switching of different current-carrying channels to explain observed electrical instability in devices with lower oscillator strengths. The study indicates that not only should designers maximize Tmax during device optimization but also they should always consider the risk of electrical instability in device operation.

Chemical-to-Electricity Carbon: Water Device.

PubMed

He, Sisi; Zhang, Yueyu; Qiu, Longbin; Zhang, Longsheng; Xie, Yun; Pan, Jian; Chen, Peining; Wang, Bingjie; Xu, Xiaojie; Hu, Yajie; Dinh, Cao Thang; De Luna, Phil; Banis, Mohammad Norouzi; Wang, Zhiqiang; Sham, Tsun-Kong; Gong, Xingao; Zhang, Bo; Peng, Huisheng; Sargent, Edward H

2018-05-01

The ability to release, as electrical energy, potential energy stored at the water:carbon interface is attractive, since water is abundant and available. However, many previous reports of such energy converters rely on either flowing water or specially designed ionic aqueous solutions. These requirements restrict practical application, particularly in environments with quiescent water. Here, a carbon-based chemical-to-electricity device that transfers the chemical energy to electrical form when coming into contact with quiescent deionized water is reported. The device is built using carbon nanotube yarns, oxygen content of which is modulated using oxygen plasma-treatment. When immersed in water, the device discharges electricity with a power density that exceeds 700 mW m -2 , one order of magnitude higher than the best previously published result. X-ray absorption and density functional theory studies support a mechanism of operation that relies on the polarization of sp 2 hybridized carbon atoms. The devices are incorporated into a flexible fabric for powering personal electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-report of physical symptoms associated with using mobile phones and other electrical devices.

PubMed

Korpinen, Leena H; Pääkkönen, Rauno J

2009-09-01

The aim of our work was to study the working-age population's self-reported physical symptoms associated with using mobile phones and other electrical devices. A qualitative method was applied using an open-ended question in a questionnaire, which included questions about the possible influence of new technical equipment on health. We then created subgroups of respondents for different self-reported symptoms associated with mobile phones and other electrical devices. The research questions were: (1) how the respondents described physical symptoms associated with using mobile phones and other electrical devices and (2) how the answers can be classified into subgroups based on symptoms or devices. We identified the following categories: (1) respondents with different self-reported symptoms which they associated with using mobile phones (headache, earache, or warmth sensations), (2) respondents who had skin symptoms when they stayed in front of a computer screen, (3) respondents who mentioned physical symptoms associated with using mobile phones and other electrical devices. Total prevalence of self-reported physical symptoms associated with using mobile phones and other electrical devices (categories 1 and 2) was 0.7%. In the future it will be possible to obtain new knowledge of these topics by using qualitative methods.

Method of Harmonic Balance in Full-Scale-Model Tests of Electrical Devices

NASA Astrophysics Data System (ADS)

Gorbatenko, N. I.; Lankin, A. M.; Lankin, M. V.

2017-01-01

Methods for determining the weber-ampere characteristics of electrical devices, one of which is based on solution of direct problem of harmonic balance and the other on solution of inverse problem of harmonic balance by the method of full-scale-model tests, are suggested. The mathematical model of the device is constructed using the describing function and simplex optimization methods. The presented results of experimental applications of the method show its efficiency. The advantage of the method is the possibility of application for nondestructive inspection of electrical devices in the processes of their production and operation.

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

PubMed

Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

2012-01-01

Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

Giant switchable photovoltaic effect in organometal trihalide perovskite devices

NASA Astrophysics Data System (ADS)

Xiao, Zhengguo; Yuan, Yongbo; Shao, Yuchuan; Wang, Qi; Dong, Qingfeng; Bi, Cheng; Sharma, Pankaj; Gruverman, Alexei; Huang, Jinsong

2015-02-01

Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm-1. The switchable photocurrent, generally observed in devices based on ferroelectric materials, reached 20.1 mA cm-2 under one sun illumination in OTP devices with a vertical architecture, which is four orders of magnitude larger than that measured in other ferroelectric photovoltaic devices. This field-switchable photovoltaic effect can be explained by the formation of reversible p-i-n structures induced by ion drift in the perovskite layer. The demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.

Simulation of Electric Propulsion Thrusters (Preprint)

DTIC Science & Technology

2011-02-07

activity concerns the plumes produced by electric thrusters. Detailed information on the plumes is required for safe integration of the thruster...ground-based laboratory facilities. Device modelling also plays an important role in plume simulations by providing accurate boundary conditions at...methods used to model the flow of gas and plasma through electric propulsion devices. Discussion of the numerical analysis of other aspects of

Electricity Usage Scheduling in Smart Building Environments Using Smart Devices

PubMed Central

Lee, Eunji; Bahn, Hyokyung

2013-01-01

With the recent advances in smart grid technologies as well as the increasing dissemination of smart meters, the electricity usage of every moment can be detected in modern smart building environments. Thus, the utility company adopts different price of electricity at each time slot considering the peak time. This paper presents a new electricity usage scheduling algorithm for smart buildings that adopts real-time pricing of electricity. The proposed algorithm detects the change of electricity prices by making use of a smart device and changes the power mode of each electric device dynamically. Specifically, we formulate the electricity usage scheduling problem as a real-time task scheduling problem and show that it is a complex search problem that has an exponential time complexity. An efficient heuristic based on genetic algorithms is performed on a smart device to cut down the huge searching space and find a reasonable schedule within a feasible time budget. Experimental results with various building conditions show that the proposed algorithm reduces the electricity charge of a smart building by 25.6% on average and up to 33.4%. PMID:24453860

Electricity usage scheduling in smart building environments using smart devices.

PubMed

Lee, Eunji; Bahn, Hyokyung

2013-01-01

With the recent advances in smart grid technologies as well as the increasing dissemination of smart meters, the electricity usage of every moment can be detected in modern smart building environments. Thus, the utility company adopts different price of electricity at each time slot considering the peak time. This paper presents a new electricity usage scheduling algorithm for smart buildings that adopts real-time pricing of electricity. The proposed algorithm detects the change of electricity prices by making use of a smart device and changes the power mode of each electric device dynamically. Specifically, we formulate the electricity usage scheduling problem as a real-time task scheduling problem and show that it is a complex search problem that has an exponential time complexity. An efficient heuristic based on genetic algorithms is performed on a smart device to cut down the huge searching space and find a reasonable schedule within a feasible time budget. Experimental results with various building conditions show that the proposed algorithm reduces the electricity charge of a smart building by 25.6% on average and up to 33.4%.

A MATHEMATICAL MODEL FOR CALCULATING ELECTRICAL CONDITIONS IN WIRE-DUCT ELECTROSTATIC PRECIPITATION DEVICES

EPA Science Inventory

The article reports the development of a new method of calculating electrical conditions in wire-duct electrostatic precipitation devices. The method, based on a numerical solution to the governing differential equations under a suitable choice of boundary conditions, accounts fo...

New device architecture of a thermoelectric energy conversion for recovering low-quality heat

NASA Astrophysics Data System (ADS)

Kim, Hoon; Park, Sung-Geun; Jung, Buyoung; Hwang, Junphil; Kim, Woochul

2014-03-01

Low-quality heat is generally discarded for economic reasons; a low-cost energy conversion device considering price per watt, /W, is required to recover this waste heat. Thin-film based thermoelectric devices could be a superior alternative for this purpose, based on their low material consumption; however, power generated in conventional thermoelectric device architecture is negligible due to the small temperature drop across the thin film. To overcome this challenge, we propose new device architecture, and demonstrate approximately 60 Kelvin temperature differences using a thick polymer nanocomposite. The temperature differences were achieved by separating the thermal path from the electrical path; whereas in conventional device architecture, both electrical charges and thermal energy share same path. We also applied this device to harvest body heat and confirmed its usability as an energy conversion device for recovering low-quality heat.

Graphene-Based Ultra-Light Batteries for Aircraft

NASA Technical Reports Server (NTRS)

Calle, Carlos I.; Kaner, Richard B.

2014-01-01

Develop a graphene-based ultracapacitor prototype that is flexible, thin, lightweight, durable, low cost, and safe and that will demonstrate the feasibility for use in aircraft center dot These graphene-based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2/g) to increase the electrical energy that can be stored. center dot The proposed devices should have the electrical storage capacity of thin-film-ion batteries but with much shorter charge/discharge cycle times as well as longer lives center dot The proposed devices will be carbon-based and so will not have the same issues with flammability or toxicity as the standard lithium-based storage cells There are two main established methods for the storage and delivery of electrical energy: center dot Batteries - Store energy with electrochemical reactions - High energy densities - Slow charge/discharge cycles - Used in applications requiring large amounts of energy ? aircraft center dot Electrochemical capacitors - Store energy in electrochemical double layers - Fast charge/discharge cycles - Low energy densities - Used in electronics devices - Large capacitors are used in truck engine cranking

Thiol-modified MoS2 nanosheets as a functional layer for electrical bistable devices

NASA Astrophysics Data System (ADS)

Li, Guan; Tan, Fenxue; Lv, Bokun; Wu, Mengying; Wang, Ruiqi; Lu, Yue; Li, Xu; Li, Zhiqiang; Teng, Feng

2018-01-01

Molybdenum disulfide nanosheets have been synthesized by one-pot method using 1-ODT as sulfur source and surfactant. The structure, morphology and optical properties of samples were investigated by XRD, FTIR, Abs spectrum and TEM patterns. The XRD pattern indicated that the as-obtained MoS2 belong to hexagonal system. The as-obtained MoS2 nanosheets blending with PVK could be used to fabricate an electrically bistable devices through a simple spin-coating method and the device exhibited an obvious electrical bistability properties. The charge transport mechanism of the device was discussed based on the filamentary switching models.

Therapeutic orthosis and electrical stimulation for upper extremity hemiplegia after stroke: a review of effectiveness based on evidence.

PubMed

Aoyagi, Yoichiro; Tsubahara, Akio

2004-01-01

Upper extremity hemiplegia after stroke is common and disabling. Apart from conventional physical and occupational therapy, a number of additional approaches that use devices such as orthoses, prostheses, electrical stimulation, and robots have been introduced. The purpose of this review was to assess the clinical efficacy of such devices used for the affected upper extremities of acute, subacute, and chronic stroke patients. Assessments of their effectiveness and recommendations were based on the weight of published scientific evidence. The amount of evidence with respect to hand splints and shoulder slings is limited. Further study with a well-designed randomized controlled trial (RCT) is required to investigate accurately their short- and long-term efficacy. A number of studies suggested that the use of electrical stimulation for reducing shoulder subluxation or improving the function of wrist and finger extensors is effective during or shortly after the daily treatment period. The robotic approach to hemiplegic upper extremities appears to be a novel therapeutic strategy that may help improve hand and arm function. However, the longer term effectiveness after discontinuation as well as the motor recovery mechanism of electrical stimulation or robotic devices remains unclear. More research is needed to determine the evidence-based effectiveness of electrical stimulation or other devices for stroke survivors.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

DOEpatents

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Simulation study on electric field intensity above train roof

NASA Astrophysics Data System (ADS)

Fan, Yizhe; Li, Huawei; Yang, Shasha

2018-04-01

In order to understand the distribution of electric field in the space above the train roof accurately and select the installation position of the detection device reasonably, in this paper, the 3D model of pantograph-catenary is established by using SolidWorks software, and the spatial electric field distribution of pantograph-catenary model is simulated based on Comsol software. According to the electric field intensity analysis within the 0.4m space above train roof, we give a reasonable installation of the detection device.

Electrical conductivity of nanocomposites based on carbon nanotubes: a 3D multiscale modeling approach

NASA Astrophysics Data System (ADS)

Grabowski, Krzysztof; Zbyrad, Paulina; Staszewski, Wieslaw J.; Uhl, Tadeusz; Wiatr, Kazimierz; Packo, Pawel

2016-04-01

Remarkable electrical properties of carbon nanotubes (CNT) have lead to increased interest in studying CNT- based devices. Many of current researches are devoted to using all kinds of carbon nanomaterials in the con- struction of sensory elements. One of the most common applications is the development of high performance, large scale sensors. Due to the remarkable conductivity of CNT's such devices represent very high sensitivity. However, there are no sufficient tools for studying and designing such sensors. The main objective of this paper is to develop and validate a multiscale numerical model for a carbon nanotubes based sensor. The device utilises the change of electrical conductivity of a nanocomposite material under applied deformation. The nanocomposite consists of a number of CNTs dispersed in polymer matrix. The paper is devoted to the analysis of the impact of spatial distribution of carbon nanotubes in polymer matrix on electrical conductivity of the sensor. One of key elements is also to examine the impact of strain on electric charge ow in such anisotropic composite structures. In the following work a multiscale electro-mechanical model for CNT - based nanocomposites is proposed. The model comprises of two length scales, namely the meso- and the macro-scale for mechanical and electrical domains. The approach allows for evaluation of macro-scale mechanical response of a strain sensor. Electrical properties of polymeric material with certain CNT fractions were derived considering electrical properties of CNTs, their contact and the tunnelling effect.

Design of belt conveyor electric control device based on CC-link bus

NASA Astrophysics Data System (ADS)

Chen, Goufen; Zhan, Minhua; Li, Jiehua

2016-01-01

In view of problem of the existing coal mine belt conveyor is no field bus communication function, two levels belt conveyor electric control system design is proposed based on field bus. Two-stage belt conveyor electric control system consists of operation platform, PLC control unit, various sensors, alarm device and the water spraying device. The error protection is realized by PLC programming, made use of CC-Link bus technology, the data share and the cooperative control came true between host station and slave station. The real-time monitor was achieved by the touch screen program. Practical application shows that the system can ensure the coalmine production, and improve the automatic level of the coalmine transport equipment.

Tablet based distributed intelligent load management

DOEpatents

Lu, Yan; Zhou, Siyuan

2018-01-09

A facility is connected to an electricity utility and is responsive to Demand Response Events. A plurality of devices is each individually connected to the electricity grid via an addressable switch connected to a secure network that is enabled to be individually switched off by a server. An occupant of a room in control of the plurality of devices provides via a Human Machine Interface on a tablet a preferred order of switching off the plurality of devices in case of a Demand Response Event. A configuration file based at least partially on the preferred order and on a severity of the Demand Response Events determines which devices which of the plurality devices will be switched off. The server accesses the configuration file and switches off the devices included in the configuration file.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Electrical controllable spin pump based on a zigzag silicene nanoribbon junction.

PubMed

Zhang, Lin; Tong, Peiqing

2017-12-13

We propose a possible electrical controllable spin pump based on a zigzag silicene nanoribbon ferromagnetic junction by applying two time-dependent perpendicular electric fields. By using the Keldysh Green's function method, we derive the analytic expression of the spin-resolved current at the adiabatic approximation and demonstrate that two asymmetric spin up and spin down currents can be pumped out in the device without an external bias. The pumped currents mainly come from the interplay between the photon-assisted spin pump effect and the electrically-modulated energy band structure of the tunneling junction. The spin valve phenomena are not only related to the energy gap opened by two perpendicular staggered potentials, but also dependent on the system parameters such as the pumping frequency, the pumping phase difference, the spin-orbit coupling and the Fermi level, which can be tuned by the electrical methods. The proposed device can also be used to produce a pure spin current and a 100% polarized spin current through the photon-assisted pumping process. Our investigations may provide an electrical manipulation of spin-polarized electrons in graphene-like pumping devices.

Giant switchable photovoltaic effect in organometal trihalide perovskite devices

DOE PAGES

Xiao, Zhengguo; Yuan, Yongbo; Shao, Yuchuan; ...

2014-12-08

Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm –1. The switchable photocurrent, generally observed in devices based on ferroelectric materials, reached 20.1 mA cm –2 under one sun illumination in OTP devices with a vertical architecture, which is four orders of magnitude larger than that measured in other ferroelectric photovoltaic devices. This field-switchable photovoltaic effect can be explainedmore » by the formation of reversible p–i–n structures induced by ion drift in the perovskite layer. Furthermore, the demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.« less

Nonvolatile Ionic Two-Terminal Memory Device

NASA Technical Reports Server (NTRS)

Williams, Roger M.

1990-01-01

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

High-Power Piezoelectric Acoustic-Electric Power Feedthru for Metal Walls

NASA Technical Reports Server (NTRS)

Bao, Xiaoqi; Biederman, Will; Sherrit, Stewart; Badescu, Mircea; Bar-Cohen, Yoseph; Jones, Christopher; Aldrich, Jack; Chang, Zensheu

2008-01-01

Piezoelectric acoustic-electric power feed-through devices transfer electric power wirelessly through a solid wall by using acoustic waves. This approach allows for the removal of holes through structures. The technology is applicable to power supply for electric equipment inside sealed containers, vacuum or pressure vessels, etc where the holes on the wall are prohibitive or result in significant performance degrade or complex designs. In the author's previous work, 100-W electric power was transferred through a metal wall by a small, simple-structure piezoelectric device. To meet requirements of higher power applications, the feasibility to transfer kilowatts level power was investigated. Pre-stressed longitudinal piezoelectric feedthru devices were analyzed by finite element model. An equivalent circuit model was developed to predict the power transfer characteristics to different electric loads. Based on the analysis results, a prototype device was designed, fabricated and a demonstration of the transmission of electric power up to 1-kW was successfully conducted. The methods to minimize the plate wave excitation on the wall were also analyzed. Both model analysis and experimental results are presented in detail in this presentation.

Cellulose-Based Smart Fluids under Applied Electric Fields

PubMed Central

Choi, Kisuk; Gao, Chun Yan; Nam, Jae Do

2017-01-01

Cellulose particles, their derivatives and composites have special environmentally benign features and are abundant in nature with their various applications. This review paper introduces the essential properties of several types of cellulose and their derivatives obtained from various source materials, and their use in electro-responsive electrorheological (ER) suspensions, which are smart fluid systems that are actively responsive under applied electric fields, while, at zero electric field, ER fluids retain a liquid-like state. Given the actively controllable characteristics of cellulose-based smart ER fluids under an applied electric field regarding their rheological and dielectric properties, they can potentially be applied for various industrial devices including dampers and haptic devices. PMID:28891966

Label-free capture of breast cancer cells spiked in buffy coats using carbon nanotube antibody micro-arrays

NASA Astrophysics Data System (ADS)

Khosravi, Farhad; Trainor, Patrick; Rai, Shesh N.; Kloecker, Goetz; Wickstrom, Eric; Panchapakesan, Balaji

2016-04-01

We demonstrate the rapid and label-free capture of breast cancer cells spiked in buffy coats using nanotube-antibody micro-arrays. Single wall carbon nanotube arrays were manufactured using photo-lithography, metal deposition, and etching techniques. Anti-epithelial cell adhesion molecule (EpCAM) antibodies were functionalized to the surface of the nanotube devices using 1-pyrene-butanoic acid succinimidyl ester functionalization method. Following functionalization, plain buffy coat and MCF7 cell spiked buffy coats were adsorbed on to the nanotube device and electrical signatures were recorded for differences in interaction between samples. A statistical classifier for the ‘liquid biopsy’ was developed to create a predictive model based on dynamic time warping to classify device electrical signals that corresponded to plain (control) or spiked buffy coats (case). In training test, the device electrical signals originating from buffy versus spiked buffy samples were classified with ˜100% sensitivity, ˜91% specificity and ˜96% accuracy. In the blinded test, the signals were classified with ˜91% sensitivity, ˜82% specificity and ˜86% accuracy. A heatmap was generated to visually capture the relationship between electrical signatures and the sample condition. Confocal microscopic analysis of devices that were classified as spiked buffy coats based on their electrical signatures confirmed the presence of cancer cells, their attachment to the device and overexpression of EpCAM receptors. The cell numbers were counted to be ˜1-17 cells per 5 μl per device suggesting single cell sensitivity in spiked buffy coats that is scalable to higher volumes using the micro-arrays.

Polymer-based electrocaloric cooling devices

DOEpatents

Zhang, Qiming; Lu, Sheng-Guo; Li, Xinyu; Gorny, Lee; Cheng, Jiping; Neese, Bret P; Chu, Baojin

2014-10-28

Cooling devices (i.e., refrigerators or heat pumps) based on polymers which exhibit a temperature change upon application or removal of an electrical field or voltage, (e.g., fluoropolymers or crosslinked fluoropolymers that exhibit electrocaloric effect).

Method and system for a gas tube-based current source high voltage direct current transmission system

DOEpatents

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

Distributed smart device for monitoring, control and management of electric loads in domotic environments.

PubMed

Morales, Ricardo; Badesa, Francisco J; García-Aracil, Nicolas; Perez-Vidal, Carlos; Sabater, Jose María

2012-01-01

This paper presents a microdevice for monitoring, control and management of electric loads at home. The key idea is to compact the electronic design as much as possible in order to install it inside a Schuko socket. Moreover, the electronic Schuko socket (electronic microdevice + Schuko socket) has the feature of communicating with a central unit and with other microdevices over the existing powerlines. Using the existing power lines, the proposed device can be installed in new buildings or in old ones. The main use of this device is to monitor, control and manage electric loads to save energy and prevent accidents produced by different kind of devices (e.g., iron) used in domestic tasks. The developed smart device is based on a single phase multifunction energy meter manufactured by Analog Devices (ADE7753) to measure the consumption of electrical energy and then to transmit it using a serial interface. To provide current measurement information to the ADE7753, an ultra flat SMD open loop integrated circuit current transducer based on the Hall effect principle manufactured by Lem (FHS-40P/SP600) has been used. Moreover, each smart device has a PL-3120 smart transceiver manufactured by LonWorks to execute the user's program, to communicate with the ADE7753 via serial interface and to transmit information to the central unit via powerline communication. Experimental results show the exactitude of the measurements made using the developed smart device.

Plasma Properties of an Exploding Semiconductor Igniter

NASA Astrophysics Data System (ADS)

McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

1997-11-01

Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

High-power piezoelectric acoustic-electric power feedthru for metal walls

NASA Astrophysics Data System (ADS)

Bao, Xiaoqi; Biederman, Will; Sherrit, Stewart; Badescu, Mircea; Bar-Cohen, Yoseph; Jones, Christopher; Aldrich, Jack; Chang, Zensheu

2008-03-01

Piezoelectric acoustic-electric power feed-through devices transfer electric power wirelessly through a solid wall using elastic waves. This approach allows for the elimination of the need for holes through structures for cabling or electrical feed-thrus . The technology supplies power to electric equipment inside sealed containers, vacuum or pressure vessels, etc where holes in the wall are prohibitive or may result in significant performance degradation or requires complex designs. In the our previous work, 100-W of electric power was transferred through a metal wall by a small, piezoelectric device with a simple-structure. To meet requirements of higher power applications, the feasibility to transfer kilowatts level power was investigated. Pre-stressed longitudinal piezoelectric feed-thru devices were analyzed by finite element modeling. An equivalent circuit model was developed to predict the characteristics of power transfer to different electric loads. Based on the analytical results, a prototype device was designed, fabricated and successfully demonstrated to transfer electric power at a level of 1-kW. Methods of minimizing plate wave excitation on the wall were also analyzed. Both model analysis and experimental results are presented in detail in this paper.

Exploring Carbon Nanotubes for Nanoscale Devices

NASA Technical Reports Server (NTRS)

Han, Jie; Dai; Anantram; Jaffe; Saini, Subhash (Technical Monitor)

1998-01-01

Carbon nanotubes (CNTs) are shown to promise great opportunities in nanoelectronic devices and nanoelectromechanical systems (NEMS) because of their inherent nanoscale sizes, intrinsic electric conductivities, and seamless hexagonal network architectures. I present our collaborative work with Stanford on exploring CNTs for nanodevices in this talk. The electrical property measurements suggest that metallic tubes are quantum wires. Furthermore, two and three terminal CNT junctions have been observed experimentally. We have proposed and studied CNT-based molecular switches and logic devices for future digital electronics. We also have studied CNTs based NEMS inclusing gears, cantilevers, and scanning probe microscopy tips. We investigate both chemistry and physics based aspects of the CNT NEMS. Our results suggest that CNT have ideal stiffness, vibrational frequencies, Q-factors, geometry-dependent electric conductivities, and the highest chemical and mechanical stabilities for the NEMS. The use of CNT SPM tips for nanolithography is presented for demonstration of the advantages of the CNT NEMS.

Electric Field Sensor for Lightning Early Warning System

NASA Astrophysics Data System (ADS)

Premlet, B.; Mohammed, R.; Sabu, S.; Joby, N. E.

2017-12-01

Electric field mills are used popularly for atmospheric electric field measurements. Atmospheric Electric Field variation is the primary signature for Lightning Early Warning systems. There is a characteristic change in the atmospheric electric field before lightning during a thundercloud formation.A voltage controlled variable capacitance is being proposed as a method for non-contacting measurement of electric fields. A varactor based mini electric field measurement system is developed, to detect any change in the atmospheric electric field and to issue lightning early warning system. Since this is a low-cost device, this can be used for developing countries which are facing adversities. A network of these devices can help in forming a spatial map of electric field variations over a region, and this can be used for more improved atmospheric electricity studies in developing countries.

Design of Smart-Meter data acquisition device based on Cloud Platform

NASA Astrophysics Data System (ADS)

Chen, Xiangqun; Huang, Rui; Shen, Liman; chen, Hao; Xiong, Dezhi; Xiao, Xiangqi; Liu, Mouhai; Xu, Renheng

2018-05-01

In recent years, the government has attached great importance to ‘Four-Meter Unified’ Project. Under the call of national policy, State Grid is participate in building ‘Four-Meter Unified’ Project actively by making use of electricity information acquisition system. In this paper, a new type Smart-Meter data acquisition device based on Cloud Platform is designed according to the newest series of standards Energy Measure and Management System for Electric, Water, Gas and Heat Meter, and this paper introduces the general scheme, main hardware design and main software design for the Smart-Meter data acquisition device.

Electrical contacts to individual SWCNTs: A review

PubMed Central

Hierold, Christofer; Haluska, Miroslav

2014-01-01

Summary Owing to their superior electrical characteristics, nanometer dimensions and definable lengths, single-walled carbon nanotubes (SWCNTs) are considered as one of the most promising materials for various types of nanodevices. Additionally, they can be used as either passive or active elements. To be integrated into circuitry or devices, they are typically connected with metal leads to provide electrical contacts. The properties and quality of these electrical contacts are important for the function and performance of SWCNT-based devices. Since carbon nanotubes are quasi-one-dimensional structures, contacts to them are different from those for bulk semiconductors. Additionally, some techniques used in Si-based technology are not compatible with SWCNT-based device fabrication, such as the contact area cleaning technique. In this review, an overview of the investigations of metal–SWCNT contacts is presented, including the principle of charge carrier injection through the metal–SWCNT contacts and experimental achievements. The methods for characterizing the electrical contacts are discussed as well. The parameters which influence the contact properties are summarized, mainly focusing on the contact geometry, metal type and the cleanliness of the SWCNT surface affected by the fabrication processes. Moreover, the challenges for widespread application of CNFETs are additionally discussed. PMID:25551048

Design and fabrication of an energy-harvesting device using vibration absorber

NASA Astrophysics Data System (ADS)

Heidari, Hamidreza; Afifi, Arash

2017-05-01

Energy-harvesting devices collect energy that is being wasted and convert to the electrical energy. For this reason, this type of devices is considered as a convenient alternative to traditional batteries. In this paper, experimental examinations were performed to investigate the application of harvesting device for the reduction of the vibration amplitude in a vibration system and also increase the efficiency of energy-harvesting device. This study focuses on the energy-harvesting device as both producing electrical device and a vibration disabled absorber. In this regard, a motion-based energy-harvesting device is designed to produce electrical energy and also eliminate vibrations of a two joint-end beam which is located under the harmonic excitation force. Then, the governing equations of the forced motion on the main beam are derived and energy-harvesting system are simulated. In addition, the system designed by MATLAB simulation is explained and its results are expressed. Finally, a prototype of the system was made and the ability of the energy-harvesting device to absorb the original system vibrations, as well as parameters impact on the efficiency of energy harvesting is investigated. Experimental results show that the energy-harvesting device, in addition to producing electric current with a maximum value of 1.5V, reduces 94% of the original system vibrations.

Piezoelectric-based hybrid reserve power sources for munitions

NASA Astrophysics Data System (ADS)

Rastegar, J.; Kwok, P.

2017-04-01

Reserve power sources are used extensively in munitions and other devices, such as emergency devices or remote sensors that need to be powered only once and for a relatively short duration. Current chemical reserve power sources, including thermal batteries and liquid reserve batteries sometimes require more than 100 msec to become fully activated. In many applications, however, electrical energy is required in a few msec following the launch event. In such applications, other power sources are needed to provide power until the reserve battery is fully activated. The amount of electrical energy that is required by most munitions before chemical reserve batteries are fully activated is generally small and can be provided by properly designed piezoelectric-based energy harvesting devices. In this paper, the development of a hybrid reserve power source that is constructed by integration of a piezoelectric-based energy harvesting device with a reserve battery to provide power almost instantaneously upon munitions firing or other similar events is being reported. A review of the state of the art in piezoelectric-based electrical energy harvesting methods and devices and their charge collection electronics for use in the developed hybrid power sources is provided together with the results of testing of the piezoelectric component of the power source and its electronic safety and charge collection electronics.

Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

DOEpatents

Horn, Kevin M [Albuquerque, NM

2006-03-28

A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.

Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

PubMed

Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

2017-05-24

Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior of perovskites, we constructed metal-oxide-semiconductor (MOS) capacitors based on perovskite films and performed capacitance-voltage (C-V) and current-voltage (I-V) measurements of the capacitors. The results provide direct evidence for the mixed ionic-electronic transport behavior within perovskite films. In the dark, there is electrical hysteresis in both the C-V and I-V curves because the mobile negative ions take part in charge transport despite frequency modulation. However, under illumination, the large amount of photoexcited free carriers screens the influence of the mobile ions with a low concentration, which is responsible for the normal C-V properties. Validation of ion migration for the gate-control ability of MOS capacitors is also helpful for the investigation of perovskite MOS transistors and other gate-control photovoltaic devices.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

PubMed

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Clinically apparent long-term electric disturbances in the acute and very long-term of patent foramen ovale device-based closure.

PubMed

Rigatelli, Gianluca; Zuin, Marco; Pedon, Luigi; Zecchel, Roberto; Dell'Avvocata, Fabio; Carrozza, Antonio; Zennaro, Marco; Pastore, Gianni; Zanon, Francesco

2017-03-01

Incidence of electrical disturbances in patients submitted to transcatheter patent foramen ovale (PFO) closure has not been fully clarified in a large population. The aim of the study is to assess the incidence of atrial fibrillation, supraventricular tachi-arrhythmias, and atrio-ventricular block in the acute and very long-term follow-up. We reviewed the medical and instrumental data of 1000 consecutive patients (mean age 47.3±17.1years) prospectively enrolled in two centers over a 13-year period (February 1999 to February 2012) for right-to-left (R-to-L) shunt ICE-aided catheter-based closure using different devices. Successful transcatheter PFO closure was achieved in 99.8% of the patients. Implanted devices were: Amplatzer PFO Occluder in 463 patients (46.3%), Amplatzer ASD Cribriform Occluder in 420 patients (42.0%), Premere Occlusion System in 95 patients (9.5%), and Biostar Occluder in 22 patients (2.2%). Postprocedural electrical complications occurred in 5.9% of patients. The only independent predictors of electrophysiological complications were female gender (OR 2.3, 0.5-5.1 [95% CI], p<0.001) and device disk >30mm (OR 5.0, 1.2-7.2 [95% CI], p<0.001). On a mean follow-up of 12 .3±0.6years (minimum 4- maximum 17years), electrical complications occurred in 1.4% of patients including one only case of complete AVB and 5 cases of permanent AF. The only independent predictors were female gender (OR 2.3, 0.5-5.1 [95% CI], p<0.001) and device disk >30mm (OR 5.0, 1.2-7.2 [95% CI], p<0.001). Device-based closure of PFO using different devices, appeared very safe from an electrophysiological point of view with low incidence of electrical disturbances even in the very long-term follow-up. Copyright © 2016 Elsevier Inc. All rights reserved.

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

PubMed

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

Performance optimization in electric field gradient focusing.

PubMed

Sun, Xuefei; Farnsworth, Paul B; Tolley, H Dennis; Warnick, Karl F; Woolley, Adam T; Lee, Milton L

2009-01-02

Electric field gradient focusing (EFGF) is a technique used to simultaneously separate and concentrate biomacromolecules, such as proteins, based on the opposing forces of an electric field gradient and a hydrodynamic flow. Recently, we reported EFGF devices fabricated completely from copolymers functionalized with poly(ethylene glycol), which display excellent resistance to protein adsorption. However, the previous devices did not provide the predicted linear electric field gradient and stable current. To improve performance, Tris-HCl buffer that was previously doped in the hydrogel was replaced with a phosphate buffer containing a salt (i.e., potassium chloride, KCl) with high mobility ions. The new devices exhibited stable current, good reproducibility, and a linear electric field distribution in agreement with the shaped gradient region design due to improved ion transport in the hydrogel. The field gradient was calculated based on theory to be approximately 5.76 V/cm(2) for R-phycoerythrin when the applied voltage was 500 V. The effect of EFGF separation channel dimensions was also investigated; a narrower focused band was achieved in a smaller diameter channel. The relationship between the bandwidth and channel diameter is consistent with theory. Three model proteins were resolved in an EFGF channel of this design. The improved device demonstrated 14,000-fold concentration of a protein sample (from 2 ng/mL to 27 microg/mL).

Stopping electric field extension in a modified nanostructure based on SOI technology - A comprehensive numerical study

NASA Astrophysics Data System (ADS)

Anvarifard, Mohammad K.; Orouji, Ali A.

2017-11-01

This article has related a particular knowledge in order to reduce short channel effects (SCEs) in nano-devices based on silicon-on-insulator (SOI) MOSFETs. The device under study has been designed in 22 nm node technology with embedding Si3N4 extra oxide as a stopping layer of electric field and a useful heatsink for transferring generated heat. Two important subjects (DC characteristics and RF characteristics) have been investigated, simultaneously. Stopping electric field extension and enhancement of channel thermal conduction are introduced as an entrance gateway for this work so that improve the electrical characteristics, eventually. The inserted extra oxide made by the Si3N4 material has a vital impact on the modification of the electrical and thermal features in the proposed device. An immense comparison between the proposed SOI and conventional SOI showed that the proposed structure has higher electrical and thermal proficiency than the conventional structure in terms of main parameters such as short channel effects (SCEs), leakage current, floating body effect (FBE), self-heating effect (SHE), voltage gain, ratio of On-current to Off- current, transconductance, output conductance, minimum noise figure and power gain.

Development of a biomechanical energy harvester.

PubMed

Li, Qingguo; Naing, Veronica; Donelan, J Maxwell

2009-06-23

Biomechanical energy harvesting-generating electricity from people during daily activities-is a promising alternative to batteries for powering increasingly sophisticated portable devices. We recently developed a wearable knee-mounted energy harvesting device that generated electricity during human walking. In this methods-focused paper, we explain the physiological principles that guided our design process and present a detailed description of our device design with an emphasis on new analyses. Effectively harvesting energy from walking requires a small lightweight device that efficiently converts intermittent, bi-directional, low speed and high torque mechanical power to electricity, and selectively engages power generation to assist muscles in performing negative mechanical work. To achieve this, our device used a one-way clutch to transmit only knee extension motions, a spur gear transmission to amplify the angular speed, a brushless DC rotary magnetic generator to convert the mechanical power into electrical power, a control system to determine when to open and close the power generation circuit based on measurements of knee angle, and a customized orthopaedic knee brace to distribute the device reaction torque over a large leg surface area. The device selectively engaged power generation towards the end of swing extension, assisting knee flexor muscles by producing substantial flexion torque (6.4 Nm), and efficiently converted the input mechanical power into electricity (54.6%). Consequently, six subjects walking at 1.5 m/s generated 4.8 +/- 0.8 W of electrical power with only a 5.0 +/- 21 W increase in metabolic cost. Biomechanical energy harvesting is capable of generating substantial amounts of electrical power from walking with little additional user effort making future versions of this technology particularly promising for charging portable medical devices.

Development of a biomechanical energy harvester

PubMed Central

Li, Qingguo; Naing, Veronica; Donelan, J Maxwell

2009-01-01

Background Biomechanical energy harvesting–generating electricity from people during daily activities–is a promising alternative to batteries for powering increasingly sophisticated portable devices. We recently developed a wearable knee-mounted energy harvesting device that generated electricity during human walking. In this methods-focused paper, we explain the physiological principles that guided our design process and present a detailed description of our device design with an emphasis on new analyses. Methods Effectively harvesting energy from walking requires a small lightweight device that efficiently converts intermittent, bi-directional, low speed and high torque mechanical power to electricity, and selectively engages power generation to assist muscles in performing negative mechanical work. To achieve this, our device used a one-way clutch to transmit only knee extension motions, a spur gear transmission to amplify the angular speed, a brushless DC rotary magnetic generator to convert the mechanical power into electrical power, a control system to determine when to open and close the power generation circuit based on measurements of knee angle, and a customized orthopaedic knee brace to distribute the device reaction torque over a large leg surface area. Results The device selectively engaged power generation towards the end of swing extension, assisting knee flexor muscles by producing substantial flexion torque (6.4 Nm), and efficiently converted the input mechanical power into electricity (54.6%). Consequently, six subjects walking at 1.5 m/s generated 4.8 ± 0.8 W of electrical power with only a 5.0 ± 21 W increase in metabolic cost. Conclusion Biomechanical energy harvesting is capable of generating substantial amounts of electrical power from walking with little additional user effort making future versions of this technology particularly promising for charging portable medical devices. PMID:19549313

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

30 CFR 75.2 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... of an electrical protective device, based upon its required and intended application, to safely... Health Administration which describe and illustrate the complete assembly of electrical machinery or... phase. An unintentional connection between an electric circuit and the grounding system. Low voltage. Up...

Floating electrode dielectrophoresis.

PubMed

Golan, Saar; Elata, David; Orenstein, Meir; Dinnar, Uri

2006-12-01

In practice, dielectrophoresis (DEP) devices are based on micropatterned electrodes. When subjected to applied voltages, the electrodes generate nonuniform electric fields that are necessary for the DEP manipulation of particles. In this study, electrically floating electrodes are used in DEP devices. It is demonstrated that effective DEP forces can be achieved by using floating electrodes. Additionally, DEP forces generated by floating electrodes are different from DEP forces generated by excited electrodes. The floating electrodes' capabilities are explained theoretically by calculating the electric field gradients and demonstrated experimentally by using test-devices. The test-devices show that floating electrodes can be used to collect erythrocytes (red blood cells). DEP devices which contain many floating electrodes ought to have fewer connections to external signal sources. Therefore, the use of floating electrodes may considerably facilitate the fabrication and operation of DEP devices. It can also reduce device dimensions. However, the key point is that DEP devices can integrate excited electrodes fabricated by microtechnology processes and floating electrodes fabricated by nanotechnology processes. Such integration is expected to promote the use of DEP devices in the manipulation of nanoparticles.

Static micro-array isolation, dynamic time series classification, capture and enumeration of spiked breast cancer cells in blood: the nanotube-CTC chip

NASA Astrophysics Data System (ADS)

Khosravi, Farhad; Trainor, Patrick J.; Lambert, Christopher; Kloecker, Goetz; Wickstrom, Eric; Rai, Shesh N.; Panchapakesan, Balaji

2016-11-01

We demonstrate the rapid and label-free capture of breast cancer cells spiked in blood using nanotube-antibody micro-arrays. 76-element single wall carbon nanotube arrays were manufactured using photo-lithography, metal deposition, and etching techniques. Anti-epithelial cell adhesion molecule (anti-EpCAM), Anti-human epithelial growth factor receptor 2 (anti-Her2) and non-specific IgG antibodies were functionalized to the surface of the nanotube devices using 1-pyrene-butanoic acid succinimidyl ester. Following device functionalization, blood spiked with SKBR3, MCF7 and MCF10A cells (100/1000 cells per 5 μl per device, 170 elements totaling 0.85 ml of whole blood) were adsorbed on to the nanotube device arrays. Electrical signatures were recorded from each device to screen the samples for differences in interaction (specific or non-specific) between samples and devices. A zone classification scheme enabled the classification of all 170 elements in a single map. A kernel-based statistical classifier for the ‘liquid biopsy’ was developed to create a predictive model based on dynamic time warping series to classify device electrical signals that corresponded to plain blood (control) or SKBR3 spiked blood (case) on anti-Her2 functionalized devices with ˜90% sensitivity, and 90% specificity in capture of 1000 SKBR3 breast cancer cells in blood using anti-Her2 functionalized devices. Screened devices that gave positive electrical signatures were confirmed using optical/confocal microscopy to hold spiked cancer cells. Confocal microscopic analysis of devices that were classified to hold spiked blood based on their electrical signatures confirmed the presence of cancer cells through staining for DAPI (nuclei), cytokeratin (cancer cells) and CD45 (hematologic cells) with single cell sensitivity. We report 55%-100% cancer cell capture yield depending on the active device area for blood adsorption with mean of 62% (˜12 500 captured off 20 000 spiked cells in 0.1 ml blood) in this first nanotube-CTC chip study.

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Enhanced cell trapping throughput using DC-biased AC electric field in a dielectrophoresis-based fluidic device with densely packed silica beads.

PubMed

Lewpiriyawong, Nuttawut; Xu, Guolin; Yang, Chun

2018-03-01

This paper presents the use of DC-biased AC electric field for enhancing cell trapping throughput in an insulator-based dielectrophoretic (iDEP) fluidic device with densely packed silica beads. Cell suspension is carried through the iDEP device by a pressure-driven flow. Under an applied DC-biased AC electric field, DEP trapping force is produced as a result of non-uniform electric field induced by the gap of electrically insulating silica beads packed between two mesh electrodes that allow both fluid and cells to pass through. While the AC component is mainly to control the magnitude of DEP trapping force, the DC component generates local electroosmotic (EO) flow in the cavity between the beads and the EO flow can be set to move along or against the main pressure-driven flow. Our experimental and simulation results show that desirable trapping is achieved when the EO flow direction is along (not against) the main flow direction. Using our proposed DC-biased AC field, the device can enhance the trapping throughput (in terms of the flowrate of cell suspension) up to five times while yielding almost the same cell capture rates as compared to the pure AC field case. Additionally, the device was demonstrated to selectively trap dead yeast cells from a mixture of flowing live and dead yeast cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization to reduce fuel consumption in charge depleting mode

DOEpatents

Roos, Bryan Nathaniel; Martini, Ryan D.

2014-08-26

A powertrain includes an internal combustion engine, a motor utilizing electrical energy from an energy storage device, and a plug-in connection. A Method for controlling the powertrain includes monitoring a fuel cut mode, ceasing a fuel flow to the engine based upon the fuel cut mode, and through a period of operation including acceleration of the powertrain, providing an entirety of propelling torque to the powertrain with the electrical energy from the energy storage device based upon the fuel cut mode.

Communicating with residential electrical devices via a vehicle telematics unit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, Rebecca C.; Pebbles, Paul H.

A method of communicating with residential electrical devices using a vehicle telematics unit includes receiving information identifying a residential electrical device to control; displaying in a vehicle one or more controlled features of the identified residential electrical device; receiving from a vehicle occupant a selection of the displayed controlled features of the residential electrical device; sending an instruction from the vehicle telematics unit to the residential electrical device via a wireless carrier system in response to the received selection; and controlling the residential electrical device using the sent instruction.

Hey you! Shut the refrigerator door!

NASA Astrophysics Data System (ADS)

Fay, Sarah; Portenga, Angela

1998-09-01

The note discusses electrical power and energy and includes possible labs to be used in a physics classroom. It is based on our experimentation with a new device called the Watt-Watt/Hour Meter, which displays instantaneous power and cumulative energy readings of household electrical devices. Our experiments utilized this meter in conjunction with various appliances and focused primarily on its use with a refrigerator.

Electrical gain in interband cascade infrared photodetectors

NASA Astrophysics Data System (ADS)

Huang, Wenxiang; Li, Lu; Lei, Lin; Massengale, Jeremy A.; Yang, Rui Q.; Mishima, Tetsuya D.; Santos, Michael B.

2018-03-01

In order to achieve improved understanding and gain insights into the device operation of interband cascade infrared photodetectors (ICIPs) and ultimately to optimize the design, we present a comparative study of five long-wavelength (LW) ICIPs based on a type-II InAs/GaSb superlattice. This study shows how the device responsivity is affected by the individual absorber thicknesses and the number of cascade stages, through the impact of light attenuation. Additionally, this study further validates that the electrical gain universally exists in non-current-matched ICIPs. With multiple cascade stages to suppress noise, these LW ICIPs achieved superior device performance at high temperatures, in terms of Johnson-noise limited detectivities, compared to commercial MCT detectors. Furthermore, a theory is developed to quantitatively describe the electrical gain in ICIPs and our calculations are in good agreement with the experimental results. Based on the theory, the optimal number of stages for maximizing the device detectivity D* is identified with inclusion of the electrical gain. Our calculation shows that this optimal number of stages is relatively large in the presence of the gain and the maximized D* has a relatively weak dependence on the absorber thickness when it is sufficiently thin.

Electrostrictive Polymers for Mechanical-to-Electrical Energy Harvesting

DTIC Science & Technology

usable electrical energy. Piezoelectric ceramic-based devices have long been used in energy harvesting for converting mechanical motion to electrical ...typically softer and more flexible, the translated electrical energy output is considerably higher under the same mechanical force. Currently...investigations in using electroactive polymers for energy harvesting, and mechanical-to- electrical energy conversion, are beginning to show potential for

Design of pressure-driven microfluidic networks using electric circuit analogy.

PubMed

Oh, Kwang W; Lee, Kangsun; Ahn, Byungwook; Furlani, Edward P

2012-02-07

This article reviews the application of electric circuit methods for the analysis of pressure-driven microfluidic networks with an emphasis on concentration- and flow-dependent systems. The application of circuit methods to microfluidics is based on the analogous behaviour of hydraulic and electric circuits with correlations of pressure to voltage, volumetric flow rate to current, and hydraulic to electric resistance. Circuit analysis enables rapid predictions of pressure-driven laminar flow in microchannels and is very useful for designing complex microfluidic networks in advance of fabrication. This article provides a comprehensive overview of the physics of pressure-driven laminar flow, the formal analogy between electric and hydraulic circuits, applications of circuit theory to microfluidic network-based devices, recent development and applications of concentration- and flow-dependent microfluidic networks, and promising future applications. The lab-on-a-chip (LOC) and microfluidics community will gain insightful ideas and practical design strategies for developing unique microfluidic network-based devices to address a broad range of biological, chemical, pharmaceutical, and other scientific and technical challenges.

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

21 CFR 876.5320 - Nonimplanted electrical continence device.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonimplanted electrical continence device. 876... Nonimplanted electrical continence device. (a) Identification. A nonimplanted electrical continence device is a device that consists of a pair of electrodes on a plug or a pessary that are connected by an electrical...

21 CFR 876.5320 - Nonimplanted electrical continence device.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Nonimplanted electrical continence device. 876... Nonimplanted electrical continence device. (a) Identification. A nonimplanted electrical continence device is a device that consists of a pair of electrodes on a plug or a pessary that are connected by an electrical...

21 CFR 876.5320 - Nonimplanted electrical continence device.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Nonimplanted electrical continence device. 876... Nonimplanted electrical continence device. (a) Identification. A nonimplanted electrical continence device is a device that consists of a pair of electrodes on a plug or a pessary that are connected by an electrical...

21 CFR 876.5320 - Nonimplanted electrical continence device.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Nonimplanted electrical continence device. 876... Nonimplanted electrical continence device. (a) Identification. A nonimplanted electrical continence device is a device that consists of a pair of electrodes on a plug or a pessary that are connected by an electrical...

Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

PubMed

Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

2015-05-27

Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

Resistive switching characteristics and mechanisms in silicon oxide memory devices

NASA Astrophysics Data System (ADS)

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

2016-05-01

Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

Electrically actuatable doped polymer flakes and electrically addressable optical devices using suspensions of doped polymer flakes in a fluid host

DOEpatents

Trajkovska-Petkoska, Anka; Jacobs, Stephen D.; Marshall, Kenneth L.; Kosc, Tanya Z.

2010-05-11

Doped electrically actuatable (electrically addressable or switchable) polymer flakes have enhanced and controllable electric field induced motion by virtue of doping a polymer material that functions as the base flake matrix with either a distribution of insoluble dopant particles or a dopant material that is completely soluble in the base flake matrix. The base flake matrix may be a polymer liquid crystal material, and the dopants generally have higher dielectric permittivity and/or conductivity than the electrically actuatable polymer base flake matrix. The dopant distribution within the base flake matrix may be either homogeneous or non-homogeneous. In the latter case, the non-homogeneous distribution of dopant provides a dielectric permittivity and/or conductivity gradient within the body of the flakes. The dopant can also be a carbon-containing material (either soluble or insoluble in the base flake matrix) that absorbs light so as to reduce the unpolarized scattered light component reflected from the flakes, thereby enhancing the effective intensity of circularly polarized light reflected from the flakes when the flakes are oriented into a light reflecting state. Electro-optic devices contain these doped flakes suspended in a host fluid can be addressed with an applied electric field, thus controlling the orientation of the flakes between a bright reflecting state and a non-reflecting dark state.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

EMTP based stability analysis of space station electric power system in a test bed environment

NASA Technical Reports Server (NTRS)

Dravid, Narayan V.; Kacpura, Thomas J.; Oconnor, Andrew M.

1992-01-01

The Space Station Freedom Electric Power System (EPS) will convert solar energy into electric energy and distribute the same using an 'all dc', Power Management and Distribution (PMAD) System. Power conditioning devices (dc to dc converters) are needed to interconnect parts of this system operating at different nominal voltage levels. Operation of such devices could generate under damped oscillations (instability) under certain conditions. Criteria for instability are examined and verified for a single device. Suggested extension of the criteria to a system operation is examined by using the EMTP model of the PMAD DC test bed. Wherever possible, data from the test bed is compared with the modeling results.

EMTP based stability analysis of Space Station Electric Power System in a test bed environment

NASA Technical Reports Server (NTRS)

Dravid, Narayan V.; Kacpura, Thomas J.; O'Connor, Andrew M.

1992-01-01

The Space Station Freedom Electric Power System (EPS) will convert solar energy into electric energy and distribute the same using an 'all dc', Power Management and Distribution (PMAD) System. Power conditioning devices (dc to dc converters) are needed to interconnect parts of this system operating at different nominal voltage levels. Operation of such devices could generate under damped oscillations (instability) under certain conditions. Criteria for instability are examined and verified for a single device. Suggested extension of the criteria to a system operation is examined by using the EMTP model of the PMAD dc test bed. Wherever possible, data from the test bed is compared with the modeling results.

DNA hybridization sensor based on pentacene thin film transistor.

PubMed

Kim, Jung-Min; Jha, Sandeep Kumar; Chand, Rohit; Lee, Dong-Hoon; Kim, Yong-Sang

2011-01-15

A DNA hybridization sensor using pentacene thin film transistors (TFTs) is an excellent candidate for disposable sensor applications due to their low-cost fabrication process and fast detection. We fabricated pentacene TFTs on glass substrate for the sensing of DNA hybridization. The ss-DNA (polyA/polyT) or ds-DNA (polyA/polyT hybrid) were immobilized directly on the surface of the pentacene, producing a dramatic change in the electrical properties of the devices. The electrical characteristics of devices were studied as a function of DNA immobilization, single-stranded vs. double-stranded DNA, DNA length and concentration. The TFT device was further tested for detection of λ-phage genomic DNA using probe hybridization. Based on these results, we propose that a "label-free" detection technique for DNA hybridization is possible through direct measurement of electrical properties of DNA-immobilized pentacene TFTs. Copyright © 2010 Elsevier B.V. All rights reserved.

High to ultra-high power electrical energy storage.

PubMed

Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

2011-12-14

High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

DOEpatents

Horn, Kevin M [Albuquerque, NM

2008-05-20

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

PubMed

Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

2016-09-01

Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

Oxygen Impurities Link Bistability and Magnetoresistance in Organic Spin Valves.

PubMed

Bergenti, Ilaria; Borgatti, Francesco; Calbucci, Marco; Riminucci, Alberto; Cecchini, Raimondo; Graziosi, Patrizio; MacLaren, Donald A; Giglia, Angelo; Rueff, Jean Pascal; Céolin, Denis; Pasquali, Luca; Dediu, Valentin

2018-03-07

Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE PAGES

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki; ...

2017-06-14

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

Magnetocardiography with sensors based on giant magnetoresistance

NASA Astrophysics Data System (ADS)

Pannetier-Lecoeur, M.; Parkkonen, L.; Sergeeva-Chollet, N.; Polovy, H.; Fermon, C.; Fowley, C.

2011-04-01

Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they can only be detected by the most sensitive magnetometers, such as Superconducting Quantum Interference Devices (SQUIDs). We report here biomagnetic recordings with hybrid sensors based on Giant MagnetoResistance (GMR). We recorded magnetic signatures of the electric activity of the human heart (magnetocardiography) in healthy volunteers. The P-wave and QRS complex, known from the corresponding electric recordings, are clearly visible in the recordings after an averaging time of about 1 min. Multiple recordings at different locations over the chest yielded a dipolar magnetic field map and allowed localizing the underlying current sources. The sensitivity of the GMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devices for functional imaging of the body.

Single-sided lateral-field and phototransistor-based optoelectronic tweezers

NASA Technical Reports Server (NTRS)

Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

2011-01-01

Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

The impact of nanocontact on nanowire based nanoelectronics.

PubMed

Lin, Yen-Fu; Jian, Wen-Bin

2008-10-01

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.

Electrical-pulse-induced resistivity modulation in Pt/TiO2-δ/Pt multilayer device related to nanoionics-based neuromorphic function

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Tsuchiya, Takashi; Takayanagi, Makoto; Terabe, Kazuya; Higuchi, Tohru

2017-06-01

Resistivity modulation behavior in Pt/TiO2-δ/Pt multilayer devices was investigated in terms of nanoionics-based neuromorphic function. The current relaxation behavior, which corresponds to short-term and long-term memorization in neuromorphic function, was analyzed using electrical pulses. In contrast to the huge difference in ionic conductivity for bulk crystal materials of TiO2-δ and WO3, the difference in the relaxation behavior was small. Rutherford backscattering spectrometry and hydrogen forward scattering spectrometry revealed that the TiO2-δ thin film contained 5.6 at. % of protons. This indicates that the neuromorphic function in TiO2-δ-based devices is caused by extrinsic proton transport, presumably through the grain boundary.

Electrically Variable Resistive Memory Devices

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

2010-01-01

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

High resolution in-operando microimaging of solar cells with pulsed electrically-detected magnetic resonance

NASA Astrophysics Data System (ADS)

Katz, Itai; Fehr, Matthias; Schnegg, Alexander; Lips, Klaus; Blank, Aharon

2015-02-01

The in-operando detection and high resolution spatial imaging of paramagnetic defects, impurities, and states becomes increasingly important for understanding loss mechanisms in solid-state electronic devices. Electron spin resonance (ESR), commonly employed for observing these species, cannot meet this challenge since it suffers from limited sensitivity and spatial resolution. An alternative and much more sensitive method, called electrically-detected magnetic resonance (EDMR), detects the species through their magnetic fingerprint, which can be traced in the device's electrical current. However, until now it could not obtain high resolution images in operating electronic devices. In this work, the first spatially-resolved electrically-detected magnetic resonance images (EDMRI) of paramagnetic states in an operating real-world electronic device are provided. The presented method is based on a novel microwave pulse sequence allowing for the coherent electrical detection of spin echoes in combination with powerful pulsed magnetic-field gradients. The applicability of the method is demonstrated on a device-grade 1-μm-thick amorphous silicon (a-Si:H) solar cell and an identical device that was degraded locally by an electron beam. The degraded areas with increased concentrations of paramagnetic defects lead to a local increase in recombination that is mapped by EDMRI with ∼20-μm-scale pixel resolution. The novel approach presented here can be widely used in the nondestructive in-operando three-dimensional characterization of solid-state electronic devices with a resolution potential of less than 100 nm.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

PubMed

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

Spin injection and transport in semiconductor and metal nanostructures

NASA Astrophysics Data System (ADS)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes directly to the realization of spin valve and spin transistor devices based on III-V semiconductors, and offers new opportunities to engineer the behavior of spintronic devices at the nanoscale.

The role of electric field in microfluidic heating induced by standing surface acoustic waves

NASA Astrophysics Data System (ADS)

Zheng, Tengfei; Wang, Chaohui; Hu, Qiao; Wei, Shoupeng

2018-06-01

The heating mechanism of standing surface acoustic waves (SSAWs) on a LiNbO3 substrate has been experimentally studied. Three devices with different substrates were used to heat the drops with NaCl concentrations ranging from 0 to 1 g/l, respectively. The device with a glass substrate was used to shield acoustic waves. The device with an Au layer between the LiNbO3 substrate and the droplet was used to shield the alternating current field. The results show that the thermal effect induced by SSAWs on the LiNbO3 substrate is composed of the acoustothermal effect due to SSAWs and the electric field thermal effect (Joule heat) due to the alternating current field. The electric field thermal effect which is ignored in SSAW devices previously plays an important role in the thermal effect induced by SSAWs. These results provide a meaningful insight into the mechanism of SSAW-based heating, which is of great help to guide the effective use of the SSAW-based heating technique for various applications.

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

21 CFR 876.5270 - Implanted electrical urinary continence device.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Implanted electrical urinary continence device... Implanted electrical urinary continence device. (a) Identification. An implanted electrical urinary device is a device intended for treatment of urinary incontinence that consists of a receiver implanted in...

21 CFR 876.5270 - Implanted electrical urinary continence device.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Implanted electrical urinary continence device... Implanted electrical urinary continence device. (a) Identification. An implanted electrical urinary device is a device intended for treatment of urinary incontinence that consists of a receiver implanted in...

21 CFR 876.5270 - Implanted electrical urinary continence device.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Implanted electrical urinary continence device... Implanted electrical urinary continence device. (a) Identification. An implanted electrical urinary device is a device intended for treatment of urinary incontinence that consists of a receiver implanted in...

21 CFR 876.5270 - Implanted electrical urinary continence device.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Implanted electrical urinary continence device... Implanted electrical urinary continence device. (a) Identification. An implanted electrical urinary device is a device intended for treatment of urinary incontinence that consists of a receiver implanted in...

21 CFR 876.5270 - Implanted electrical urinary continence device.

Code of Federal Regulations, 2010 CFR

2010-04-01

... Implanted electrical urinary continence device. (a) Identification. An implanted electrical urinary device is a device intended for treatment of urinary incontinence that consists of a receiver implanted in... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Implanted electrical urinary continence device...

Electromagnetic Compatibility of Devices on Hybrid Electromagnetic Components

NASA Astrophysics Data System (ADS)

Konesev, S. G.; Khazieva, R. T.; Kirillov, R. V.; Gainutdinov, I. Z.; Kondratyev, E. Y.

2018-01-01

There is a general tendency to reduce the weight and dimensions, the consumption of conductive and electrical insulating materials, increase the reliability and energy efficiency of electrical devices. In recent years, designers have been actively developing devices based on hybrid electromagnetic components (HEMC) such as inductive-capacitive converters (ICC), voltages pulse generators (VPG), secondary power supplies (SPS), capacitive storage devices (CSD), induction heating systems (IHS). Sources of power supplies of similar electrical devices contain, as a rule, links of increased frequency and function in key (pulse) modes, which leads to an increase in electromagnetic interference (EMI). Nonlinear and periodic (impulse) loads, non-sinusoidal (pulsation) of the electromotive force and nonlinearity of the internal parameters of the source and input circuits of consumers distort the shape of the input voltage lead to an increase in thermal losses from the higher harmonic currents, aging of the insulation, increase in the weight of the power supply filter units, resonance at higher harmonics. The most important task is to analyze the operation of electrotechnical devices based on HEMC from the point of view of creating EMIs and assessing their electromagnetic compatibility (EMC) with power supply systems (PSS). The article presents the results of research on the operation of an IHS, the operation principle of a secondary power supply source of which is based on the operation of a half-bridge autonomous inverter, the switching circuit of which is made in the form of a HEMC, called the «multifunctional integrated electromagnetic component»" (MIEC).

Single-Walled Carbon Nanotubes Probed with Insulator-Based Dielectrophoresis

PubMed Central

2017-01-01

Single-walled carbon nanotubes (SWNTs) offer unique electrical and optical properties. Common synthesis processes yield SWNTs with large length polydispersity (several tens of nanometers up to centimeters) and heterogeneous electrical and optical properties. Applications often require suitable selection and purification. Dielectrophoresis is one manipulation method for separating SWNTs based on dielectric properties and geometry. Here, we present a study of surfactant and single-stranded DNA-wrapped SWNTs suspended in aqueous solutions manipulated by insulator-based dielectrophoresis (iDEP). This method allows us to manipulate SWNTs with the help of arrays of insulating posts in a microfluidic device around which electric field gradients are created by the application of an electric potential to the extremities of the device. Semiconducting SWNTs were imaged during dielectrophoretic manipulation with fluorescence microscopy making use of their fluorescence emission in the near IR. We demonstrate SWNT trapping at low-frequency alternating current (AC) electric fields with applied potentials not exceeding 1000 V. Interestingly, suspended SWNTs showed both positive and negative dielectrophoresis, which we attribute to their ζ potential and the suspension properties. Such behavior agrees with common theoretical models for nanoparticle dielectrophoresis. We further show that the measured ζ potentials and suspension properties are in excellent agreement with a numerical model predicting the trapping locations in the iDEP device. This study is fundamental for the future application of low-frequency AC iDEP for technological applications of SWNTs. PMID:29131586

Localized electrical fine tuning of passive microwave and radio frequency devices

DOEpatents

Findikoglu, Alp T.

2001-04-10

A method and apparatus for the localized electrical fine tuning of passive multiple element microwave or RF devices in which a nonlinear dielectric material is deposited onto predetermined areas of a substrate containing the device. An appropriate electrically conductive material is deposited over predetermined areas of the nonlinear dielectric and the signal line of the device for providing electrical contact with the nonlinear dielectric. Individual, adjustable bias voltages are applied to the electrically conductive material allowing localized electrical fine tuning of the devices. The method of the present invention can be applied to manufactured devices, or can be incorporated into the design of the devices so that it is applied at the time the devices are manufactured. The invention can be configured to provide localized fine tuning for devices including but not limited to coplanar waveguides, slotline devices, stripline devices, and microstrip devices.

Graphene based terahertz phase modulators

NASA Astrophysics Data System (ADS)

Kakenov, N.; Ergoktas, M. S.; Balci, O.; Kocabas, C.

2018-07-01

Electrical control of amplitude and phase of terahertz radiation (THz) is the key technological challenge for high resolution and noninvasive THz imaging. The lack of active materials and devices hinders the realization of these imaging systems. Here, we demonstrate an efficient terahertz phase and amplitude modulation using electrically tunable graphene devices. Our device structure consists of electrolyte-gated graphene placed at quarter wavelength distance from a reflecting metallic surface. In this geometry, graphene operates as a tunable impedance surface which yields electrically controlled reflection phase. Terahertz time domain reflection spectroscopy reveals the voltage controlled phase modulation of π and the reflection modulation of 50 dB. To show the promises of our approach, we demonstrate a multipixel phase modulator array which operates as a gradient impedance surface.

The Absorption Refrigerator as a Thermal Transformer

ERIC Educational Resources Information Center

Herrmann, F.

2009-01-01

The absorption refrigerator can be considered a thermal transformer, that is, a device that is analogous to the electric transformer. The analogy is based on the correspondence between the extensive quantities, entropy and electric charge and the intensive variables, temperature and electric potential. (Contains 1 footnote and 6 figures.)

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

PubMed

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

An enhanced lumped element electrical model of a double barrier memristive device

NASA Astrophysics Data System (ADS)

Solan, Enver; Dirkmann, Sven; Hansen, Mirko; Schroeder, Dietmar; Kohlstedt, Hermann; Ziegler, Martin; Mussenbrock, Thomas; Ochs, Karlheinz

2017-05-01

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

A combined vector potential-scalar potential method for FE computation of 3D magnetic fields in electrical devices with iron cores

NASA Technical Reports Server (NTRS)

Wang, R.; Demerdash, N. A.

1991-01-01

A method of combined use of magnetic vector potential based finite-element (FE) formulations and magnetic scalar potential (MSP) based formulations for computation of three-dimensional magnetostatic fields is introduced. In this method, the curl-component of the magnetic field intensity is computed by a reduced magnetic vector potential. This field intensity forms the basic of a forcing function for a global magnetic scalar potential solution over the entire volume of the region. This method allows one to include iron portions sandwiched in between conductors within partitioned current-carrying subregions. The method is most suited for large-scale global-type 3-D magnetostatic field computations in electrical devices, and in particular rotating electric machinery.

Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

NASA Astrophysics Data System (ADS)

Wang, Dong; Ning, Jing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

2017-10-01

Here we systemically discussed the influence of dielectric substrates on the surface morphology, electrical and optical performance of transferred graphene. The electrical properties were investigated using a microwave-probing technique without metal-graphene contact. We found that a complex mechanism governed the influence of the surface properties of the dielectric substrates, such as morphology, hydrophilicity, crystallinity, and polarization, on the performance of the graphene. We also found that graphene on r-Al2O3 was more effective for graphene-based devices with a high carrier mobility of ˜5000 cm2 V-1 s-1. This provides a new method to choose the most suitable substrate for fabricating graphene-based devices.

Hot spot dynamics in carbon nanotube array devices.

PubMed

Engel, Michael; Steiner, Mathias; Seo, Jung-Woo T; Hersam, Mark C; Avouris, Phaedon

2015-03-11

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measurements, we observe under steady state bias conditions the emergence of time-variable, local temperature maxima with dimensions below 300 nm, and temperatures above 400 K. On the basis of time domain cross-correlation analysis, we investigate how the intensity fluctuations of the thermal radiation patterns are correlated with the overall device current. The analysis reveals the interdependence of electrical current fluctuations and time-variable hot spot formation that limits the overall device performance and, ultimately, may cause device degradation. The findings have implications for the future development of carbon nanotube-based technologies.

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment.

PubMed

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-12-16

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor.

Release Resistant Electrical Interconnections For Mems Devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.

2005-02-22

A release resistant electrical interconnection comprising a gold-based electrical conductor compression bonded directly to a highly-doped polysilicon bonding pad in a MEMS, IMEMS, or MOEMS device, without using any intermediate layers of aluminum, titanium, solder, or conductive adhesive disposed in-between the conductor and polysilicon pad. After the initial compression bond has been formed, subsequent heat treatment of the joint above 363 C creates a liquid eutectic phase at the bondline comprising gold plus approximately 3 wt % silicon, which, upon re-solidification, significantly improves the bond strength by reforming and enhancing the initial bond. This type of electrical interconnection is resistant to chemical attack from acids used for releasing MEMS elements (HF, HCL), thereby enabling the use of a "package-first, release-second" sequence for fabricating MEMS devices. Likewise, the bond strength of an Au--Ge compression bond may be increased by forming a transient liquid eutectic phase comprising Au-12 wt % Ge.

Transistor-based interface circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2007-02-13

Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Silicon-Based Thermoelectrics: Harvesting Low Quality Heat Using Economically Printed Flexible Nanostructured Stacked Thermoelectric Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-03-01

Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to ourmore » current annual electricity production.« less

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

Solar cells having integral collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Exploratory study on the methodology of fast imaging of unilateral stroke lesions by electrical impedance asymmetry in human heads.

PubMed

Ma, Jieshi; Xu, Canhua; Dai, Meng; You, Fusheng; Shi, Xuetao; Dong, Xiuzhen; Fu, Feng

2014-01-01

Stroke has a high mortality and disability rate and should be rapidly diagnosed to improve prognosis. Diagnosing stroke is not a problem for hospitals with CT, MRI, and other imaging devices but is difficult for community hospitals without these devices. Based on the mechanism that the electrical impedance of the two hemispheres of a normal human head is basically symmetrical and a stroke can alter this symmetry, a fast electrical impedance imaging method called symmetrical electrical impedance tomography (SEIT) is proposed. In this technique, electrical impedance tomography (EIT) data measured from the undamaged craniocerebral hemisphere (CCH) is regarded as reference data for the remaining EIT data measured from the other CCH for difference imaging to identify the differences in resistivity distribution between the two CCHs. The results of SEIT imaging based on simulation data from the 2D human head finite element model and that from the physical phantom of human head verified this method in detection of unilateral stroke.

Exploratory Study on the Methodology of Fast Imaging of Unilateral Stroke Lesions by Electrical Impedance Asymmetry in Human Heads

PubMed Central

Xu, Canhua; Dai, Meng; You, Fusheng; Shi, Xuetao

2014-01-01

Stroke has a high mortality and disability rate and should be rapidly diagnosed to improve prognosis. Diagnosing stroke is not a problem for hospitals with CT, MRI, and other imaging devices but is difficult for community hospitals without these devices. Based on the mechanism that the electrical impedance of the two hemispheres of a normal human head is basically symmetrical and a stroke can alter this symmetry, a fast electrical impedance imaging method called symmetrical electrical impedance tomography (SEIT) is proposed. In this technique, electrical impedance tomography (EIT) data measured from the undamaged craniocerebral hemisphere (CCH) is regarded as reference data for the remaining EIT data measured from the other CCH for difference imaging to identify the differences in resistivity distribution between the two CCHs. The results of SEIT imaging based on simulation data from the 2D human head finite element model and that from the physical phantom of human head verified this method in detection of unilateral stroke. PMID:25006594

Application of nanomaterials in two-terminal resistive-switching memory devices

PubMed Central

Ouyang, Jianyong

2010-01-01

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of the optical and electrical characteristics of solution-processed poly (3 hexylthiophene) (P3HT): multiwall carbon nanotube (MWCNT) composite-based devices

NASA Astrophysics Data System (ADS)

Rathore, Priyanka; Mohan Singh Negi, Chandra; Singh Verma, Ajay; Singh, Amarjeet; Chauhan, Gayatri; Regis Inigo, Anto; Gupta, Saral K.

2017-08-01

Devices comprised of solution-processed poly (3-hexylthiophene) (P3HT)/multiwall carbon nanotubes (MWCNTs), with various concentrations of MWCNTs, were fabricated and characterized. The morphology of the P3HT: MWCNT nanocomposite was characterized by using field emission scanning electron microscopy (FESEM). The optical characteristics of the nanocomposite were studied by UV/VIS/NIR spectroscopy and Raman spectroscopy. The electrical properties of the fabricated devices were characterized by measuring the current density-voltage (J-V) characteristics. While the J-V characteristics of a pristine P3HT device reveal thermal injection limited charge transport, the P3HT: MWCNT nanocomposite-based devices exhibit three distinct voltage-dependent conduction regimes. The fitting curve with measured data reveals Ohmic conduction for a low voltage range, a trap-charge limited conduction (TCLC) process at an intermediate voltage range followed by a trap free space-charge limited conduction (SCLC) process at much higher voltages. A fundamental understanding of this work can assist in creating new charge transport pathways which will provide new avenues for the development of highly efficient polymer-based optoelectronic devices.

An electric stimulation system for electrokinetic particle manipulation in microfluidic devices.

PubMed

Lopez-de la Fuente, M S; Moncada-Hernandez, H; Perez-Gonzalez, V H; Lapizco-Encinas, B H; Martinez-Chapa, S O

2013-03-01

Microfluidic devices have grown significantly in the number of applications. Microfabrication techniques have evolved considerably; however, electric stimulation systems for microdevices have not advanced at the same pace. Electric stimulation of micro-fluidic devices is an important element in particle manipulation research. A flexible stimulation instrument is desired to perform configurable, repeatable, automated, and reliable experiments by allowing users to select the stimulation parameters. The instrument presented here is a configurable and programmable stimulation system for electrokinetic-driven microfluidic devices; it consists of a processor, a memory system, and a user interface to deliver several types of waveforms and stimulation patterns. It has been designed to be a flexible, highly configurable, low power instrument capable of delivering sine, triangle, and sawtooth waveforms with one single frequency or two superimposed frequencies ranging from 0.01 Hz to 40 kHz, and an output voltage of up to 30 Vpp. A specific stimulation pattern can be delivered over a single time period or as a sequence of different signals for different time periods. This stimulation system can be applied as a research tool where manipulation of particles suspended in liquid media is involved, such as biology, medicine, environment, embryology, and genetics. This system has the potential to lead to new schemes for laboratory procedures by allowing application specific and user defined electric stimulation. The development of this device is a step towards portable and programmable instrumentation for electric stimulation on electrokinetic-based microfluidic devices, which are meant to be integrated with lab-on-a-chip devices.

An electric stimulation system for electrokinetic particle manipulation in microfluidic devices

NASA Astrophysics Data System (ADS)

Lopez-de la Fuente, M. S.; Moncada-Hernandez, H.; Perez-Gonzalez, V. H.; Lapizco-Encinas, B. H.; Martinez-Chapa, S. O.

2013-03-01

Microfluidic devices have grown significantly in the number of applications. Microfabrication techniques have evolved considerably; however, electric stimulation systems for microdevices have not advanced at the same pace. Electric stimulation of micro-fluidic devices is an important element in particle manipulation research. A flexible stimulation instrument is desired to perform configurable, repeatable, automated, and reliable experiments by allowing users to select the stimulation parameters. The instrument presented here is a configurable and programmable stimulation system for electrokinetic-driven microfluidic devices; it consists of a processor, a memory system, and a user interface to deliver several types of waveforms and stimulation patterns. It has been designed to be a flexible, highly configurable, low power instrument capable of delivering sine, triangle, and sawtooth waveforms with one single frequency or two superimposed frequencies ranging from 0.01 Hz to 40 kHz, and an output voltage of up to 30 Vpp. A specific stimulation pattern can be delivered over a single time period or as a sequence of different signals for different time periods. This stimulation system can be applied as a research tool where manipulation of particles suspended in liquid media is involved, such as biology, medicine, environment, embryology, and genetics. This system has the potential to lead to new schemes for laboratory procedures by allowing application specific and user defined electric stimulation. The development of this device is a step towards portable and programmable instrumentation for electric stimulation on electrokinetic-based microfluidic devices, which are meant to be integrated with lab-on-a-chip devices.

Power spectrum analysis for defect screening in integrated circuit devices

DOEpatents

Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

2011-12-01

A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices

NASA Astrophysics Data System (ADS)

Ran, G. Z.; Jiang, D. F.; Kan, Q.; Chen, H. D.

2010-12-01

We have observed a strongly polarized edge-emission from an organic light emitting device (OLED) with a silicon anode and a stacked Sm/Au (or Ag) cathode. For the OLED with a Sm/Au cathode, the transverse magnetic (TM) mode is stronger than the transverse electric (TE) mode by a factor of 2, while the polarization ratio of TM:TE is close to 300 for that with a Sm/Ag cathode. The polarization results from the scattering of surface plasmon polaritons at the device boundary. Such a silicon-based OLED is potentially an electrically excited SPP source in plasmonics.

Carbon-Nanotube-Based Thermoelectric Materials and Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blackburn, Jeffrey L.; Ferguson, Andrew J.; Cho, Chungyeon

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specificmore » energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.« less

Carbon-Nanotube-Based Thermoelectric Materials and Devices

DOE PAGES

Blackburn, Jeffrey L.; Ferguson, Andrew J.; Cho, Chungyeon; ...

2018-01-22

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specificmore » energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.« less

Carbon-Nanotube-Based Thermoelectric Materials and Devices.

PubMed

Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

2018-03-01

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?

PubMed

Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

2015-02-21

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp(2) carbon-based nanodevices. To evaluate whether such enhanced properties would be retained under various realistic conditions, we investigate the structural and electronic properties of semiconducting carbon nanotubes on perfect and defective hexagonal boron nitride sheets under an external electric field as well as with a metal impurity, using density functional theory. We verify that the use of a perfect hexagonal boron nitride sheet as a substrate indeed improves the device performances of carbon nanotubes, compared with the use of conventional substrates such as SiO2. We further show that even the hexagonal boron nitride with some defects can show better performance as a substrate. Our calculations, on the other hand, also suggest that some defective boron nitride layers with a monovacancy and a nickel impurity could bring about poor device behavior since the imperfections impair electrical conductivity due to residual scattering under an applied electric field.

Fabrication and Characterization of Bi2Te3-Based Chip-Scale Thermoelectric Energy Harvesting Devices

NASA Astrophysics Data System (ADS)

Cornett, Jane; Chen, Baoxing; Haidar, Samer; Berney, Helen; McGuinness, Pat; Lane, Bill; Gao, Yuan; He, Yifan; Sun, Nian; Dunham, Marc; Asheghi, Mehdi; Goodson, Ken; Yuan, Yi; Najafi, Khalil

2017-05-01

Thermoelectric energy harvesters convert otherwise wasted heat into electrical energy. As a result, they have the potential to play a critical role in the autonomous wireless sensor network signal chain. In this paper, we present work carried out on the development of Bi2Te3-based thermoelectric chip-scale energy harvesting devices. Process flow, device demonstration and characterization are highlighted.

Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

NASA Astrophysics Data System (ADS)

Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

2011-10-01

Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

Method for assessing motor insulation on operating motors

DOEpatents

Kueck, John D.; Otaduy, Pedro J.

1997-01-01

A method for monitoring the condition of electrical-motor-driven devices. The method is achieved by monitoring electrical variables associated with the functioning of an operating motor, applying these electrical variables to a three phase equivalent circuit and determining non-symmetrical faults in the operating motor based upon symmetrical components analysis techniques.

21 CFR 868.5710 - Electrically powered oxygen tent.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Electrically powered oxygen tent. 868.5710 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5710 Electrically powered oxygen tent. (a) Identification. An electrically powered oxygen tent is a device that encloses a patient's...

21 CFR 868.5710 - Electrically powered oxygen tent.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Electrically powered oxygen tent. 868.5710 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5710 Electrically powered oxygen tent. (a) Identification. An electrically powered oxygen tent is a device that encloses a patient's...

21 CFR 868.5710 - Electrically powered oxygen tent.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electrically powered oxygen tent. 868.5710 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5710 Electrically powered oxygen tent. (a) Identification. An electrically powered oxygen tent is a device that encloses a patient's...

21 CFR 868.5710 - Electrically powered oxygen tent.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Electrically powered oxygen tent. 868.5710 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5710 Electrically powered oxygen tent. (a) Identification. An electrically powered oxygen tent is a device that encloses a patient's...

21 CFR 868.5710 - Electrically powered oxygen tent.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Electrically powered oxygen tent. 868.5710 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5710 Electrically powered oxygen tent. (a) Identification. An electrically powered oxygen tent is a device that encloses a patient's...

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Understanding the conductive channel evolution in Na:WO3-x-based planar devices

NASA Astrophysics Data System (ADS)

Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

2015-03-01

An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07545e

Non- contacting capacitive diagnostic device

DOEpatents

Ellison, Timothy

2005-07-12

A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de; Hermann, S.; Hartmann, M.

The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it ismore » of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.« less

Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study

NASA Astrophysics Data System (ADS)

Tittmann-Otto, J.; Hermann, S.; Kalbacova, J.; Hartmann, M.; Toader, M.; Rodriguez, R. D.; Schulz, S. E.; Zahn, D. R. T.; Gessner, T.

2016-03-01

The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it is of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.

21 CFR 868.2775 - Electrical peripheral nerve stimulator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... a device used to apply an electrical current to a patient to test the level of pharmacological... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Electrical peripheral nerve stimulator. 868.2775... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2775 Electrical peripheral nerve...

21 CFR 868.2775 - Electrical peripheral nerve stimulator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... a device used to apply an electrical current to a patient to test the level of pharmacological... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Electrical peripheral nerve stimulator. 868.2775... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2775 Electrical peripheral nerve...

High Photoelectric Conversion Efficiency of Metal Phthalocyanine/Fullerene Heterojunction Photovoltaic Device

PubMed Central

Lin, Chi-Feng; Zhang, Mi; Liu, Shun-Wei; Chiu, Tien-Lung; Lee, Jiun-Haw

2011-01-01

This paper introduces the fundamental physical characteristics of organic photovoltaic (OPV) devices. Photoelectric conversion efficiency is crucial to the evaluation of quality in OPV devices, and enhancing efficiency has been spurring on researchers to seek alternatives to this problem. In this paper, we focus on organic photovoltaic (OPV) devices and review several approaches to enhance the energy conversion efficiency of small molecular heterojunction OPV devices based on an optimal metal-phthalocyanine/fullerene (C60) planar heterojunction thin film structure. For the sake of discussion, these mechanisms have been divided into electrical and optical sections: (1) Electrical: Modification on electrodes or active regions to benefit carrier injection, charge transport and exciton dissociation; (2) Optical: Optional architectures or infilling to promote photon confinement and enhance absorption. PMID:21339999

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

NASA Astrophysics Data System (ADS)

Nedic, Stanko; Tea Chun, Young; Hong, Woong-Ki; Chu, Daping; Welland, Mark

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ˜16.5 V, a high drain current on/off ratio of ˜105, a gate leakage current below ˜300 pA, and excellent retention characteristics for over 104 s.

Gating electrical transport through DNA molecules that bridge between silicon nanogaps.

PubMed

Takagi, Shogo; Takada, Tadao; Matsuo, Naoto; Yokoyama, Shin; Nakamura, Mitsunobu; Yamana, Kazushige

2012-03-21

DNA electronic devices were prepared on silicon-based three-terminal electrodes. Both ends of DNA molecules (400 bp long, mixed sequences) were bridged via chemical bonds between the source-drain nanogap (120 nm) electrodes. S-Shaped I-V curves were obtained and the electric current can be modulated by the gate voltage. The DNA molecules act as semiconducting p-type nanowires in the three-terminal device. This journal is © The Royal Society of Chemistry 2012

Counterbalancing of morphology and conductivity of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate based flexible devices.

PubMed

Jang, Woongsik; Ahn, Sunyong; Park, Soyun; Park, Jong Hyeok; Wang, Dong Hwan

2016-12-01

The importance of conductive polymer electrodes with a balance between the morphology and electrical conductivity for flexible organic photovoltaic properties has been demonstrated. Highly transparent PEDOT:PSS anodes with controlled conductivity and surface properties were realized by insertion of dimethyl sulfoxide (DMSO) and a fluorosurfactant (Zonyl) as efficient additives and used for flexible organic photovoltaic cells (OPVs) which are based on a bulk-heterojunction of polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7):[6,6]phenyl-C 71 -butyric acid methyl ester (PC 71 BM). We investigated the correlation between the electrical properties of PEDOT:PSS electrodes and their influences on the surface morphology of the active materials (PTB7:PC 71 BM). When the device was prepared from the PEDOT:PSS layer functioning as an anode of OPV through an optimized ratio of 5 vol% of DMSO and 0.1 wt% of fluorosurfactant, the devices exhibited improved fill factor (FF) due to the enhanced coverage of PEDOT:PSS films. These results correlate with reduced photoluminescence and increased charge extraction as seen through Raman spectroscopy and electrical analysis, respectively. The conductive polymer electrode with the balance between the morphology and electrical conductivity can be a useful replacement for brittle electrodes such as those made of indium tin oxide (ITO) as they are more resistant to cracking and bending conditions, which will contribute to the long-term operation of flexible devices.

Home Use Devices: How to Prepare for and Handle Power Outages for Medical Devices That Require Electricity

MedlinePlus

... Handle Power Outages for Medical Devices that Require Electricity Center for De CDRH vices and Rad lth ... Handle Power Outages for Medical Devices that Require Electricity As a home medical device user, it is ...

Carbon-Based Materials for Lithium-Ion Batteries, Electrochemical Capacitors, and Their Hybrid Devices.

PubMed

Yao, Fei; Pham, Duy Tho; Lee, Young Hee

2015-07-20

A rapidly developing market for portable electronic devices and hybrid electrical vehicles requires an urgent supply of mature energy-storage systems. As a result, lithium-ion batteries and electrochemical capacitors have lately attracted broad attention. Nevertheless, it is well known that both devices have their own drawbacks. With the fast development of nanoscience and nanotechnology, various structures and materials have been proposed to overcome the deficiencies of both devices to improve their electrochemical performance further. In this Review, electrochemical storage mechanisms based on carbon materials for both lithium-ion batteries and electrochemical capacitors are introduced. Non-faradic processes (electric double-layer capacitance) and faradic reactions (pseudocapacitance and intercalation) are generally explained. Electrochemical performance based on different types of electrolytes is briefly reviewed. Furthermore, impedance behavior based on Nyquist plots is discussed. We demonstrate the influence of cell conductivity, electrode/electrolyte interface, and ion diffusion on impedance performance. We illustrate that relaxation time, which is closely related to ion diffusion, can be extracted from Nyquist plots and compared between lithium-ion batteries and electrochemical capacitors. Finally, recent progress in the design of anodes for lithium-ion batteries, electrochemical capacitors, and their hybrid devices based on carbonaceous materials are reviewed. Challenges and future perspectives are further discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

System and method for motor parameter estimation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luhrs, Bin; Yan, Ting

2014-03-18

A system and method for determining unknown values of certain motor parameters includes a motor input device connectable to an electric motor having associated therewith values for known motor parameters and an unknown value of at least one motor parameter. The motor input device includes a processing unit that receives a first input from the electric motor comprising values for the known motor parameters for the electric motor and receive a second input comprising motor data on a plurality of reference motors, including values for motor parameters corresponding to the known motor parameters of the electric motor and values formore » motor parameters corresponding to the at least one unknown motor parameter value of the electric motor. The processor determines the unknown value of the at least one motor parameter from the first input and the second input and determines a motor management strategy for the electric motor based thereon.« less

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Hydrogen sensors based on catalytic metals

NASA Astrophysics Data System (ADS)

Beklemyshev, V. I.; Berezine, V.; Bykov, Victor A.; Kiselev, L.; Makhonin, I.; Pevgov, V.; Pustovoy, V.; Semynov, A.; Sencov, Y.; Shkuropat, I.; Shokin, A.

1999-11-01

On the base of microelectronical and micromechanical technology were designed and developed converters of hydrogen concentration to electrical signals. The devices of controlling concentration of hydrogen in the air were developed. These devices were applied for ensuring fire and explosion security of complex technological teste of missile oxygen-hydrogen engine, developed for cryogenic accelerations block. The sensor block of such device was installed directly on the armor-plate, to which was attached tested engine.

Polarized electroluminescence from edge-emission organic light emitting devices

NASA Astrophysics Data System (ADS)

Ran, G. Z.; Jiang, D. F.

2011-01-01

We report the experimental observation and measurement of the polarized electroluminescence from an edge-emission Si based- organic light emitting device (OLED) with a Sm/Au or Sm/Ag cathode. Light collected from the OLED edge comes from the scattering of the surface plasmon polaritons (SPPs) at the device boundary. This experiment shows that such Si-OLED can be an electrically excited SPP source on a silicon chip for optical interconnect based on SPPs.

Fabrication and electrorotation of a novel epoxy based micromotor working in a uniform DC electric field

NASA Astrophysics Data System (ADS)

Bauer, Rita A.; Kelemen, Lóránd; Nakano, Masami; Totsuka, Atsushi; Zrínyi, Miklós

2015-10-01

We have presented the first direct observation of electric field induced rotation of epoxy based polymer rotors. Polymer disks, hollow cylinders and gears were prepared in few micrometer dimensions as rotors. Electrorotation of these sub-millimeter sized tools was studied under uniform dc electric field. The effects of shape, size and thickness were investigated. The novel epoxy based micro devices show intensive spinning in a uniform dc electric field. The rotational speed of micron-sized polymer rotors can be conveniently tuned in a wide range (between 300 and 3000 rpm) by the electric field intensity, opening new perspectives for their use in several MEMS applications.

40 CFR 424.10 - Applicability; description of the open electric furnaces with wet air pollution control devices...

Code of Federal Regulations, 2011 CFR

2011-07-01

... electric furnaces with wet air pollution control devices subcategory. 424.10 Section 424.10 Protection of... MANUFACTURING POINT SOURCE CATEGORY Open Electric Furnaces With Wet Air Pollution Control Devices Subcategory § 424.10 Applicability; description of the open electric furnaces with wet air pollution control devices...

40 CFR 424.10 - Applicability; description of the open electric furnaces with wet air pollution control devices...

Code of Federal Regulations, 2010 CFR

2010-07-01

... electric furnaces with wet air pollution control devices subcategory. 424.10 Section 424.10 Protection of... MANUFACTURING POINT SOURCE CATEGORY Open Electric Furnaces With Wet Air Pollution Control Devices Subcategory § 424.10 Applicability; description of the open electric furnaces with wet air pollution control devices...

40 CFR 424.10 - Applicability; description of the open electric furnaces with wet air pollution control devices...

Code of Federal Regulations, 2013 CFR

2013-07-01

... electric furnaces with wet air pollution control devices subcategory. 424.10 Section 424.10 Protection of... MANUFACTURING POINT SOURCE CATEGORY Open Electric Furnaces With Wet Air Pollution Control Devices Subcategory § 424.10 Applicability; description of the open electric furnaces with wet air pollution control devices...

40 CFR 424.10 - Applicability; description of the open electric furnaces with wet air pollution control devices...

Code of Federal Regulations, 2014 CFR

2014-07-01

... electric furnaces with wet air pollution control devices subcategory. 424.10 Section 424.10 Protection of... MANUFACTURING POINT SOURCE CATEGORY Open Electric Furnaces With Wet Air Pollution Control Devices Subcategory § 424.10 Applicability; description of the open electric furnaces with wet air pollution control devices...

40 CFR 424.10 - Applicability; description of the open electric furnaces with wet air pollution control devices...

Code of Federal Regulations, 2012 CFR

2012-07-01

... electric furnaces with wet air pollution control devices subcategory. 424.10 Section 424.10 Protection of... MANUFACTURING POINT SOURCE CATEGORY Open Electric Furnaces With Wet Air Pollution Control Devices Subcategory § 424.10 Applicability; description of the open electric furnaces with wet air pollution control devices...

Method for assessing motor insulation on operating motors

DOEpatents

Kueck, J.D.; Otaduy, P.J.

1997-03-18

A method for monitoring the condition of electrical-motor-driven devices is disclosed. The method is achieved by monitoring electrical variables associated with the functioning of an operating motor, applying these electrical variables to a three phase equivalent circuit and determining non-symmetrical faults in the operating motor based upon symmetrical components analysis techniques. 15 figs.

Metal–Organic Frameworks as Active Materials in Electronic Sensor Devices

PubMed Central

Campbell, Michael G.; Dincă, Mircea

2017-01-01

In the past decade, advances in electrically conductive metal–organic frameworks (MOFs) and MOF-based electronic devices have created new opportunities for the development of next-generation sensors. Here we review this rapidly-growing field, with a focus on the different types of device configurations that have allowed for the use of MOFs as active components of electronic sensor devices. PMID:28498308

Passive safety device and internal short tested method for energy storage cells and systems

DOEpatents

Keyser, Matthew; Darcy, Eric; Long, Dirk; Pesaran, Ahmad

2015-09-22

A passive safety device for an energy storage cell for positioning between two electrically conductive layers of the energy storage cell. The safety device also comprising a separator and a non-conductive layer. A first electrically conductive material is provided on the non-conductive layer. A first opening is formed through the separator between the first electrically conductive material and one of the electrically conductive layers of the energy storage device. A second electrically conductive material is provided adjacent the first electrically conductive material on the non-conductive layer, wherein a space is formed on the non-conductive layer between the first and second electrically conductive materials. A second opening is formed through the non-conductive layer between the second electrically conductive material and another of the electrically conductive layers of the energy storage device. The first and second electrically conductive materials combine and exit at least partially through the first and second openings to connect the two electrically conductive layers of the energy storage device at a predetermined temperature.

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

NASA Technical Reports Server (NTRS)

Theofylaktos, Onoufrios (Inventor); Meador, Michael A. (Inventor); Miranda, Felix A. (Inventor); Pinto, Nicholas (Inventor); Mueller, Carl H. (Inventor); Santos-Perez, Javier (Inventor)

2017-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

21 CFR 882.4360 - Electric cranial drill motor.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Electric cranial drill motor. 882.4360 Section 882...) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Surgical Devices § 882.4360 Electric cranial drill motor. (a) Identification. An electric cranial drill motor is an electrically operated power source used...

21 CFR 882.4360 - Electric cranial drill motor.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Electric cranial drill motor. 882.4360 Section 882...) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Surgical Devices § 882.4360 Electric cranial drill motor. (a) Identification. An electric cranial drill motor is an electrically operated power source used...

21 CFR 882.4360 - Electric cranial drill motor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electric cranial drill motor. 882.4360 Section 882...) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Surgical Devices § 882.4360 Electric cranial drill motor. (a) Identification. An electric cranial drill motor is an electrically operated power source used...

21 CFR 882.4360 - Electric cranial drill motor.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Electric cranial drill motor. 882.4360 Section 882...) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Surgical Devices § 882.4360 Electric cranial drill motor. (a) Identification. An electric cranial drill motor is an electrically operated power source used...

21 CFR 882.4360 - Electric cranial drill motor.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Electric cranial drill motor. 882.4360 Section 882...) MEDICAL DEVICES NEUROLOGICAL DEVICES Neurological Surgical Devices § 882.4360 Electric cranial drill motor. (a) Identification. An electric cranial drill motor is an electrically operated power source used...

Accelerated Aging System for Prognostics of Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

2010-01-01

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

NASA Technical Reports Server (NTRS)

Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

2011-01-01

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

Spin-Caloritronic Batteries

NASA Astrophysics Data System (ADS)

Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang; Jauho, A.-P.

2017-11-01

The thermoelectric performance of a topological energy converter is analyzed. The H -shaped device is based on a combination of transverse topological effects involving the spin: the inverse spin Hall effect and the spin Nernst effect. The device can convert a temperature drop in one arm into an electric power output in the other arm. Analytical expressions for the output voltage, the figure of merit (Z T ), and energy-converting efficiency are reported. We show that the output voltage and the Z T can be tuned by the geometry of the device and the physical properties of the material. Importantly, contrary to a conventional thermoelectric device, here a low electric conductivity may, in fact, enhance the Z T value, thereby opening a path to strategies in optimizing the figure of merit.

Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Prajapat, Manoj; Roy, Asim

2017-07-01

Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3  ×  103, 105 s and 105 cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS2. The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device.

Limited output transcranial electrical stimulation (LOTES-2017): Engineering principles, regulatory statutes, and industry standards for wellness, over-the-counter, or prescription devices with low risk.

PubMed

Bikson, Marom; Paneri, Bhaskar; Mourdoukoutas, Andoni; Esmaeilpour, Zeinab; Badran, Bashar W; Azzam, Robin; Adair, Devin; Datta, Abhishek; Fang, Xiao Hui; Wingeier, Brett; Chao, Daniel; Alonso-Alonso, Miguel; Lee, Kiwon; Knotkova, Helena; Woods, Adam J; Hagedorn, David; Jeffery, Doug; Giordano, James; Tyler, William J

We present device standards for low-power non-invasive electrical brain stimulation devices classified as limited output transcranial electrical stimulation (tES). Emerging applications of limited output tES to modulate brain function span techniques to stimulate brain or nerve structures, including transcranial direct current stimulation (tDCS), transcranial alternating current stimulation (tACS), and transcranial pulsed current stimulation (tPCS), have engendered discussion on how access to technology should be regulated. In regards to legal regulations and manufacturing standards for comparable technologies, a comprehensive framework already exists, including quality systems (QS), risk management, and (inter)national electrotechnical standards (IEC). In Part 1, relevant statutes are described for medical and wellness application. While agencies overseeing medical devices have broad jurisdiction, enforcement typically focuses on those devices with medical claims or posing significant risk. Consumer protections regarding responsible marketing and manufacture apply regardless. In Part 2 of this paper, we classify the electrical output performance of devices cleared by the United States Food and Drug Administration (FDA) including over-the-counter (OTC) and prescription electrostimulation devices, devices available for therapeutic or cosmetic purposes, and devices indicated for stimulation of the body or head. Examples include iontophoresis devices, powered muscle stimulators (PMS), cranial electrotherapy stimulation (CES), and transcutaneous electrical nerve stimulation (TENS) devices. Spanning over 13 FDA product codes, more than 1200 electrical stimulators have been cleared for marketing since 1977. The output characteristics of conventional tDCS, tACS, and tPCS techniques are well below those of most FDA cleared devices, including devices that are available OTC and those intended for stimulation on the head. This engineering analysis demonstrates that with regard to output performance and standing regulation, the availability of tDCS, tACS, or tPCS to the public would not introduce risk, provided such devices are responsibly manufactured and legally marketed. In Part 3, we develop voluntary manufacturer guidance for limited output tES that is aligned with current regulatory standards. Based on established medical engineering and scientific principles, we outline a robust and transparent technical framework for ensuring limited output tES devices are designed to minimize risks, while also supporting access and innovation. Alongside applicable medical and government activities, this voluntary industry standard (LOTES-2017) further serves an important role in supporting informed decisions by the public. Copyright © 2017 Elsevier Inc. All rights reserved.

The creation of high-temperature superconducting cables of megawatt range in Russia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sytnikov, V. E., E-mail: vsytnikov@gmail.com; Bemert, S. E.; Krivetsky, I. V.

Urgent problems of the power industry in the 21st century require the creation of smart energy systems, providing a high effectiveness of generation, transmission, and consumption of electric power. Simultaneously, the requirements for controllability of power systems and ecological and resource-saving characteristics at all stages of production and distribution of electric power are increased. One of the decision methods of many problems of the power industry is the development of new high-efficiency electrical equipment for smart power systems based on superconducting technologies to ensure a qualitatively new level of functioning of the electric power industry. The intensive research and developmentmore » of new types of electrical devices based on superconductors are being carried out in many industrialized advanced countries. Interest in such developments has especially increased in recent years owing to the discovery of so-called high-temperature superconductors (HTS) that do not require complicated and expensive cooling devices. Such devices can operate at cooling by inexpensive and easily accessible liquid nitrogen. Taking into account the obvious advantages of superconducting cable lines for the transmission of large power flows through an electrical network, as compared with conventional cables, the Federal Grid Company of Unified Energy System (JSC FGC UES) initiated a research and development program including the creation of superconducting HTS AC and DC cable lines. Two cable lines for the transmitted power of 50 MVA/MW at 20 kV were manufactured and tested within the framework of the program.« less

The creation of high-temperature superconducting cables of megawatt range in Russia

NASA Astrophysics Data System (ADS)

Sytnikov, V. E.; Bemert, S. E.; Krivetsky, I. V.; Romashov, M. A.; Popov, D. A.; Fedotov, E. V.; Komandenko, O. V.

2015-12-01

Urgent problems of the power industry in the 21st century require the creation of smart energy systems, providing a high effectiveness of generation, transmission, and consumption of electric power. Simultaneously, the requirements for controllability of power systems and ecological and resource-saving characteristics at all stages of production and distribution of electric power are increased. One of the decision methods of many problems of the power industry is the development of new high-efficiency electrical equipment for smart power systems based on superconducting technologies to ensure a qualitatively new level of functioning of the electric power industry. The intensive research and development of new types of electrical devices based on superconductors are being carried out in many industrialized advanced countries. Interest in such developments has especially increased in recent years owing to the discovery of so-called high-temperature superconductors (HTS) that do not require complicated and expensive cooling devices. Such devices can operate at cooling by inexpensive and easily accessible liquid nitrogen. Taking into account the obvious advantages of superconducting cable lines for the transmission of large power flows through an electrical network, as compared with conventional cables, the Federal Grid Company of Unified Energy System (JSC FGC UES) initiated a research and development program including the creation of superconducting HTS AC and DC cable lines. Two cable lines for the transmitted power of 50 MVA/MW at 20 kV were manufactured and tested within the framework of the program.

Electrical control of charged carriers and excitons in atomically thin materials

NASA Astrophysics Data System (ADS)

Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

2018-02-01

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

High Sensitivity Stress Sensor Based on Hybrid Materials

NASA Technical Reports Server (NTRS)

Cao, Xian-An (Inventor)

2014-01-01

A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

Magnesium-based methods, systems, and devices

DOEpatents

Zhao, Yufeng; Ban, Chunmei; Ruddy, Daniel; Parilla, Philip A.; Son, Seoung-Bum

2017-12-12

An aspect of the present invention is an electrical device, where the device includes a current collector and a porous active layer electrically connected to the current collector to form an electrode. The porous active layer includes MgB.sub.x particles, where x.gtoreq.1, mixed with a conductive additive and a binder additive to form empty interstitial spaces between the MgB.sub.x particles, the conductive additive, and the binder additive. The MgB.sub.x particles include a plurality of boron sheets of boron atoms covalently bound together, with a plurality of magnesium atoms reversibly intercalated between the boron sheets and ionically bound to the boron atoms.

Microelectromechanical mirrors and electrically-programmable diffraction gratings based on two-stage actuation

DOEpatents

Allen, James J.; Sinclair, Michael B.; Dohner, Jeffrey L.

2005-11-22

A microelectromechanical (MEM) device for redirecting incident light is disclosed. The MEM device utilizes a pair of electrostatic actuators formed one above the other from different stacked and interconnected layers of polysilicon to move or tilt an overlying light-reflective plate (i.e. a mirror) to provide a reflected component of the incident light which can be shifted in phase or propagation angle. The MEM device, which utilizes leveraged bending to provide a relatively-large vertical displacement up to several microns for the light-reflective plate, has applications for forming an electrically-programmable diffraction grating (i.e. a polychromator) or a micromirror array.

Dimensionality effects in chalcogenide-based devices

NASA Astrophysics Data System (ADS)

Kostylev, S. A.

2013-06-01

The multiplicity of fundamental bulk effects with small characteristic dimensions and short times and diversity of their combinations attracts a lot of researcher and industrialist attention in nanoelectronics and photonics to chalcogenide materials. Experimental data presented on dimensional effects of electrical chalcogenide switching (threshold voltage and threshold current dependence on device area and the film thickness), and in phase-change memory (switching, programming and read parameters), are analyzed from the point of view of choice of low dimensional materials with S-NDC and participation of electrical instabilities - high current density filaments. New ways of improving parameters of phase-change devices are proposed together with new criteria of material choice.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

PubMed

Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

2010-10-01

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.

2010-10-15

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven bymore » TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.« less

Research and development of a new RF-assisted device for bloodless rapid transection of the liver: Computational modeling and in vivo experiments

PubMed Central

Burdío, Fernando; Berjano, Enrique J; Navarro, Ana; Burdío, José M; Grande, Luis; Gonzalez, Ana; Cruz, Ignacio; Güemes, Antonio; Sousa, Ramón; Subirá, Jorge; Castiella, Tomás; Poves, Ignasi; Lequerica, Juan L

2009-01-01

Background Efficient and safe transection of biological tissue in liver surgery is strongly dependent on the ability to address both parenchymal division and hemostasis simultaneously. In addition to the conventional clamp crushing or finger fracture methods other techniques based on radiofrequency (RF) currents have been extensively employed to reduce intraoperative blood loss. In this paper we present our broad research plan for a new RF-assisted device for bloodless, rapid resection of the liver. Methods Our research plan includes computer modeling and in vivo studies. Computer modeling was based on the Finite Element Method (FEM) and allowed us to estimate the distribution of electrical power deposited in the tissue, along with assessing the effect of the characteristics of the device on the temperature profiles. Studies based on in vivo pig liver models provided a comparison of the performance of the new device with other techniques (saline-linked technology) currently employed in clinical practice. Finally, the plan includes a pilot clinical trial, in which both the new device and the accessory equipment are seen to comply with all safety requirements. Results The FEM results showed a high electrical gradient around the tip of the blade, responsible for the maximal increase of temperature at that point, where temperature reached 100°C in only 3.85 s. Other hot points with lower temperatures were located at the proximal edge of the device. Additional simulations with an electrically insulated blade produced more uniform and larger lesions (assessed as the 55°C isotherm) than the electrically conducting blade. The in vivo study, in turn, showed greater transection speed (3 ± 0 and 3 ± 1 cm2/min for the new device in the open and laparoscopic approaches respectively) and also lower blood loss (70 ± 74 and 26 ± 34 mL) during transection of the liver, as compared to saline-linked technology (2 ± 1 cm2/min with P = 0.002, and 527 ± 273 mL with P = 0.001). Conclusion A new RF-assisted device for bloodless, rapid liver resection was designed, built and tested. The results demonstrate the potential advantages of this device over others currently employed. PMID:19296852

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment

PubMed Central

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-01-01

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor. PMID:26671673

Optical, electrical, and magnetic field studies of organic materials for light emitting diodes and photovoltaic applications

NASA Astrophysics Data System (ADS)

Basel, Tek Prasad

We studied optical, electrical, and magnetic field responses of films and devices based on organic semiconductors that are used for organic light emitting diodes (OLEDs) and photovoltaic (OPV) solar cell applications. Our studies show that the hyperfine interaction (HFI)-mediated spin mixing is the key process underlying various magnetic field effects (MFE) and spin transport in aluminum tris(8-hydroxyquinoline)[Alq3]-based OLEDs and organic spin-valve (OSV). Conductivity-detected magnetic resonance in OLEDs and magneto-resistance (MR) in OSVs show substantial isotope dependence. In contrast, isotope-insensitive behavior in the magneto-conductance (MC) of same devices is explained by the collision of spin ½ carriers with triplet polaron pairs. We used steady state optical spectroscopy for studying the energy transfer dynamics in films and OLEDs based on host-guest blends of the fluorescent polymer and phosphorescent molecule. We have also studied the magnetic-field controlled color manipulation in these devices, which provide a strong proof for the `polaron-pair' mechanism underlying the MFE in organic devices. The critical issue that hampers organic spintronics device applications is significant magneto-electroluminescence (MEL) at room temperature (RT). Whereas inorganic spin valves (ISVs) show RT magneto-resistance, MR>80%, however, the devices do not exhibit electroluminescence (EL). In contrast, OLEDs show substantive EL emission, and are particularly attractive because of their flexibility, low cost, and potential for multicolor display. We report a conceptual novel hybrid organic/inorganic spintronics device (h-OLED), where we employ both ISV with large MR at RT, and OLED that has efficient EL emission. We investigated the charge transfer process in an OPV solar cell through optical, electrical, and magnetic field measurements of thin films and devices based on a low bandgap polymer, PTB7 (fluorinated poly-thienothiophene-benzodithiophene). We found that one of the major losses that limit the power conversion efficiency of OPV devices is the formation of triplet excitons in the polymer through recombination of charge-transfer (CT) excitons at the interface, and presented a method to suppress the dissociation of CT states by incorporating the spin ½ additive, galvinoxyl in the bulk heterojunction architecture of the active organic blend layer.

Electrically Driven Thermal Management: Flight Validation, Experiment Development, Future Technologies

NASA Technical Reports Server (NTRS)

Didion, Jeffrey R.

2018-01-01

Electrically Driven Thermal Management is an active research and technology development initiative incorporating ISS technology flight demonstrations (STP-H5), development of Microgravity Science Glovebox (MSG) flight experiment, and laboratory-based investigations of electrically based thermal management techniques. The program targets integrated thermal management for future generations of RF electronics and power electronic devices. This presentation reviews four program elements: i.) results from the Electrohydrodynamic (EHD) Long Term Flight Demonstration launched in February 2017 ii.) development of the Electrically Driven Liquid Film Boiling Experiment iii.) two University based research efforts iv.) development of Oscillating Heat Pipe evaluation at Goddard Space Flight Center.

Alkaline Capacitors Based on Nitride Nanoparticles

NASA Technical Reports Server (NTRS)

Aldissi, Matt

2003-01-01

High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.

Graphene planar lightwave circuit sensors for chemical detection

NASA Astrophysics Data System (ADS)

Maliakal, Ashok; Husaini, Saima; Reith, Leslie; Bollond, Paul; Cabot, Steve; Sheehan, Paul; Hangartar, Sandra; Walton, Scott; Tamanaha, Cy

2017-02-01

Sensing devices based on Graphene Field Effect Transistors (G-FET) have been demonstrated by several groups to show excellent sensitivity for a variety of chemical agents. These devices are based on measuring changes in the electrical conductivity of graphene when exposed to various chemicals. However, because of its unique band structure, graphene also exhibits changes in its optical response upon chemical exposure. The conical intersection of the valence and conduction bands results in a low density of states near the Dirac point. At this point, chemical doping resulting from molecular binding to graphene can result in dramatic changes in graphene's optical absorption. Here we will discuss our recent work in developing a graphene planar lightwave circuit (PLC) sensor which exploits these optical and electronic properties of graphene to demonstrate chemical sensitivity. The devices are based on a strong evanescent coupling of graphene via electrically gated silicon nanowire waveguides. A strong response in the form of a reversible optical attenuation change of 6 dB is shown when these devices interact with toxic industrial chemicals such as iodine and ammonia. The optical transition can also be tuned to the optical c-band (1530-1565 nm) which enables these devices to operate at telecom wavelengths.

Seebeck Effects in N-Type and P-Type Polymers Driven Simultaneously by Surface Polarization and Entropy Differences Based on Conductor/Polymer/Conductor Thin-Film Devices

DOE PAGES

Hu, Dehua; Liu, Qing; Tisdale, Jeremy; ...

2015-04-15

This paper reports Seebeck effects driven by both surface polarization difference and entropy difference by using intramolecular charge-transfer states in n-type and p-type conjugated polymers, namely IIDT and IIDDT, based on vertical conductor/polymer/conductor thin-film devices. Large Seebeck coefficients of -898 V/K and 1300 V/K from are observed from n-type IIDT p-type IIDDT, respectively, when the charge-transfer states are generated by a white light illumination of 100 mW/cm2. Simultaneously, electrical conductivities are increased from almost insulating states in dark condition to conducting states under photoexcitation in both n-type IIDT and p-type IIDDT devices. We find that the intramolecular charge-transfer states canmore » largely enhance Seebeck effects in the n-type IIDT and p-type IIDDT devices driven by both surface polarization difference and entropy difference. Furthermore, the Seebeck effects can be shifted between polarization and entropy regimes when electrical conductivities are changed. This reveals a new concept to develop Seebeck effects by controlling polarization and entropy regimes based on charge-transfer states in vertical conductor/polymer/conductor thin-film devices.« less

Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices.

PubMed

Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

2015-04-14

An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO(3-x)) films on a soda-lime glass substrate, from which Na(+) diffuses into the WO(3-x) films during the deposition. The entire process of Na(+) migration driven by an alternating electric field is visualized in the Na-doped WO(3-x) films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na(+) mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.

GaN light-emitting device based on ionic liquid electrolyte

NASA Astrophysics Data System (ADS)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Solution-based electrical doping of semiconducting polymer films over a limited depth

NASA Astrophysics Data System (ADS)

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Chou, Wen-Fang; Aizawa, Naoya; Larrain, Felipe A.; Wang, Ming; Perrotta, Alberto; Choi, Sangmoo; Graham, Samuel; Bazan, Guillermo C.; Nguyen, Thuc-Quyen; Marder, Seth R.; Kippelen, Bernard

2017-04-01

Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10-20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. This approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 +/- 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.

Graphene-Based Flexible and Stretchable Electronics.

PubMed

Jang, Houk; Park, Yong Ju; Chen, Xiang; Das, Tanmoy; Kim, Min-Seok; Ahn, Jong-Hyun

2016-06-01

Graphene provides outstanding properties that can be integrated into various flexible and stretchable electronic devices in a conventional, scalable fashion. The mechanical, electrical, and optical properties of graphene make it an attractive candidate for applications in electronics, energy-harvesting devices, sensors, and other systems. Recent research progress on graphene-based flexible and stretchable electronics is reviewed here. The production and fabrication methods used for target device applications are first briefly discussed. Then, the various types of flexible and stretchable electronic devices that are enabled by graphene are discussed, including logic devices, energy-harvesting devices, sensors, and bioinspired devices. The results represent important steps in the development of graphene-based electronics that could find applications in the area of flexible and stretchable electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tuning of the Seebeck Coefficient and the Electrical and Thermal Conductivity of Hybrid Materials Based on Polypyrrole and Bismuth Nanowires.

PubMed

Hnida, Katarzyna E; Pilarczyk, Kacper; Knutelski, Marcin; Marzec, Mateusz; Gajewska, Marta; Kosonowski, Artur; Chlebda, Damian; Lis, Bartłomiej; Przybylski, Marek

2018-04-06

The growing demand for clean energy catalyzes the development of new devices capable of generating electricity from renewable energy resources. One of the possible approaches focuses on the use of thermoelectric materials (TE), which may utilize waste heat, water, and solar thermal energy to generate electrical power. An improvement of the performance of such devices may be achieved through the development of composites made of an organic matrix filled with nanostructured thermoelectric materials working in a synergetic way. The first step towards such designs requires a better understanding of the fundamental interactions between available materials. In this paper, this matter is investigated and the questions regarding the change of electrical and thermal properties of nanocomposites based on low-conductive polypyrrole enriched with bismuth nanowires of well-defined geometry and morphology is answered. It is clearly demonstrated that the electrical conductivity and the Seebeck coefficient may be tuned either simultaneously or separately within particular Bi NWs content ranges, and that both parameters may be increased at the same time. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

21 CFR 868.2775 - Electrical peripheral nerve stimulator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electrical peripheral nerve stimulator. 868.2775... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2775 Electrical peripheral nerve stimulator. (a) Identification. An electrical peripheral nerve stimulator (neuromuscular blockade monitor) is...

21 CFR 868.2775 - Electrical peripheral nerve stimulator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Electrical peripheral nerve stimulator. 868.2775... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2775 Electrical peripheral nerve stimulator. (a) Identification. An electrical peripheral nerve stimulator (neuromuscular blockade monitor) is...

21 CFR 868.2775 - Electrical peripheral nerve stimulator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Electrical peripheral nerve stimulator. 868.2775... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Monitoring Devices § 868.2775 Electrical peripheral nerve stimulator. (a) Identification. An electrical peripheral nerve stimulator (neuromuscular blockade monitor) is...

A disposable power source in resource-limited environments: A paper-based biobattery generating electricity from wastewater.

PubMed

Fraiwan, Arwa; Kwan, Landen; Choi, Seokheun

2016-11-15

We report a novel paper-based biobattery which generates power from microorganism-containing liquid derived from renewable and sustainable wastewater which is readily accessible in the local environment. The device fuses the art of origami and the technology of microbial fuel cells (MFCs) and has the potential to shift the paradigm for flexible and stackable paper-based batteries by enabling exceptional electrical characteristics and functionalities. 3D, modular, and retractable battery stack is created from (i) 2D paper sheets through high degrees of folding and (ii) multifunctional layers sandwiched for MFC device configuration. The stack is based on ninja star-shaped origami design formed by eight MFC modular blades, which is retractable from sharp shuriken (closed) to round frisbee (opened). The microorganism-containing wastewater is added into an inlet of the closed battery stack and it is transported into each MFC module through patterned fluidic pathways in the paper layers. During operation, the battery stack is transformed into the round frisbee to connect eight MFC modules in series for improving the power output and simultaneously expose all air-cathodes to the air for their cathodic reactions. The device generates desired values of electrical current and potential for powering an LED for more than 20min. Copyright © 2016 Elsevier B.V. All rights reserved.

Magnetic-Assisted, Self-Healable, Yarn-Based Supercapacitor.

PubMed

Huang, Yang; Huang, Yan; Zhu, Minshen; Meng, Wenjun; Pei, Zengxia; Liu, Chang; Hu, Hong; Zhi, Chunyi

2015-06-23

Yarn-based supercapacitors have received considerable attention recently, offering unprecedented opportunities for future wearable electronic devices (e.g., smart clothes). However, the reliability and lifespan of yarn-based supercapacitors can be seriously limited by accidental mechanical damage during practical applications. Therefore, a supercapacitor endowed with mechanically and electrically self-healing properties is a brilliant solution to the challenge. Compared with the conventional planar-like or large wire-like structure, the reconnection of the broken yarn electrode composed of multiple tiny fibers (diameter <20 μm) is much more difficult and challenging, which directly affects the restoration of electrical conductivity after damage. Herein, a self-healable yarn-based supercapacitor that ensures the reconnection of broken electrodes has been successfully developed by wrapping magnetic electrodes around a self-healing polymer shell. The strong force from magnetic attraction between the broken yarn electrodes benefits reconnection of fibers in the yarn electrodes during self-healing and thus offers an effective strategy for the restoration of electric conductivity, whereas the polymer shell recovers the configuration integrity and mechanical strength. With the design, the specific capacitance of our prototype can be restored up to 71.8% even after four breaking/healing cycles with great maintenance of the whole device's mechanical properties. This work may inspire the design and fabrication of other distinctive self-healable and wearable electronic devices.

NREL Topic 1 Final Report: Cohesive Application of Standards-Based Connected Devices to Enable Clean Energy Technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hudgins, Andrew P.; Sparn, Bethany F.; Jin, Xin

This document is the final report of a two-year development, test, and demonstration project entitled 'Cohesive Application of Standards-Based Connected Devices to Enable Clean Energy Technologies.' The project was part of the National Renewable Energy Laboratory's (NREL) Integrated Network Test-bed for Energy Grid Research and Technology (INTEGRATE) initiative. The Electric Power Research Institute (EPRI) and a team of partners were selected by NREL to carry out a project to develop and test how smart, connected consumer devices can act to enable the use of more clean energy technologies on the electric power grid. The project team includes a set ofmore » leading companies that produce key products in relation to achieving this vision: thermostats, water heaters, pool pumps, solar inverters, electric vehicle supply equipment, and battery storage systems. A key requirement of the project was open access at the device level - a feature seen as foundational to achieving a future of widespread distributed generation and storage. The internal intelligence, standard functionality and communication interfaces utilized in this project result in the ability to integrate devices at any level, to work collectively at the level of the home/business, microgrid, community, distribution circuit or other. Collectively, the set of products serve as a platform on which a wide range of control strategies may be developed and deployed.« less

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

NASA Astrophysics Data System (ADS)

Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

2018-06-01

The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

NASA Technical Reports Server (NTRS)

Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

2015-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Single-Molecule Electrical Random Resequencing of DNA and RNA

NASA Astrophysics Data System (ADS)

Ohshiro, Takahito; Matsubara, Kazuki; Tsutsui, Makusu; Furuhashi, Masayuki; Taniguchi, Masateru; Kawai, Tomoji

2012-07-01

Two paradigm shifts in DNA sequencing technologies--from bulk to single molecules and from optical to electrical detection--are expected to realize label-free, low-cost DNA sequencing that does not require PCR amplification. It will lead to development of high-throughput third-generation sequencing technologies for personalized medicine. Although nanopore devices have been proposed as third-generation DNA-sequencing devices, a significant milestone in these technologies has been attained by demonstrating a novel technique for resequencing DNA using electrical signals. Here we report single-molecule electrical resequencing of DNA and RNA using a hybrid method of identifying single-base molecules via tunneling currents and random sequencing. Our method reads sequences of nine types of DNA oligomers. The complete sequence of 5'-UGAGGUA-3' from the let-7 microRNA family was also identified by creating a composite of overlapping fragment sequences, which was randomly determined using tunneling current conducted by single-base molecules as they passed between a pair of nanoelectrodes.

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1999-01-01

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Energy management system for a rotary machine and method therefor

DOEpatents

Bowman, Michael John; Sinha, Gautam; Sheldon, Karl Edward

2004-11-09

In energy management system is provided for a power generating device having a working fluid intake in which the energy management system comprises an electrical dissipation device coupled to the power generating device and a dissipation device cooling system configured to direct a portion of a working fluid to the electrical dissipation device so as to provide thermal control to the electrical dissipation device.

Thermo-compressive transfer printing for facile alignment and robust device integration of nanowires.

PubMed

Lee, Won Seok; Won, Sejeong; Park, Jeunghee; Lee, Jihye; Park, Inkyu

2012-06-07

Controlled alignment and mechanically robust bonding between nanowires (NWs) and electrodes are essential requirements for reliable operation of functional NW-based electronic devices. In this work, we developed a novel process for the alignment and bonding between NWs and metal electrodes by using thermo-compressive transfer printing. In this process, bottom-up synthesized NWs were aligned in parallel by shear loading onto the intermediate substrate and then finally transferred onto the target substrate with low melting temperature metal electrodes. In particular, multi-layer (e.g. Cr/Au/In/Au and Cr/Cu/In/Au) metal electrodes are softened at low temperatures (below 100 °C) and facilitate submergence of aligned NWs into the surface of electrodes at a moderate pressure (∼5 bar). By using this thermo-compressive transfer printing process, robust electrical and mechanical contact between NWs and metal electrodes can be realized. This method is believed to be very useful for the large-area fabrication of NW-based electrical devices with improved mechanical robustness, electrical contact resistance, and reliability.

Possibility of controlling nonregulated prices in the electricity market by means of varying the parameters of a power system

NASA Astrophysics Data System (ADS)

Vaskovskaya, T. A.

2014-12-01

This paper offers a new approach to the analysis of price signals from the wholesale electricity and capacity market that is based on the analysis of the influence exerted by input data used in the problem of optimization of the power system operating conditions, namely: parameters of a power grid and power-receiving equipment that might vary under the effect of control devices. It is shown that it would be possible to control nonregulated prices for electricity in the wholesale electricity market by varying the parameters of control devices and energy-receiving equipment. An increase in the effectiveness of power transmission and the cost-effective use of fuel-and-energy resources (energy saving) can become an additional effect of controlling the nonregulated prices.

Exhaust gas oxygen sensors

NASA Astrophysics Data System (ADS)

Hetrick, Robert E.; Hohnke, D. K.; Logothetis, E. M.

1981-01-01

Ceramic ZrO2, TiO2 and related oxides with suitable O2-sensitive electrical properties have found important applications in devices for measuring exhaust-gas O2 concentration. For example, such devices are key components in feedback control systems that would maintain the intake air-to-fuel ratio near the stoichiometric value where regulated emissions can be minimized. The physical principles underlying the operation of ZrO2 based O2-concentration cells and TiO2-based resistive devices for the stoichiometric application are described. Finally, a device based on electrochemical O2 pumping is discussed which may be useful for A/F control in the fuel-efficient lean region.

Electric terminal performance and characterization of solid oxide fuel cells and systems

NASA Astrophysics Data System (ADS)

Lindahl, Peter Allan

Solid Oxide Fuel Cells (SOFCs) are electrochemical devices which can effect efficient, clean, and quiet conversion of chemical to electrical energy. In contrast to conventional electricity generation systems which feature multiple discrete energy conversion processes, SOFCs are direct energy conversion devices. That is, they feature a fully integrated chemical to electrical energy conversion process where the electric load demanded of the cell intrinsically drives the electrochemical reactions and associated processes internal to the cell. As a result, the cell's electric terminals provide a path for interaction between load side electric demand and the conversion side processes. The implication of this is twofold. First, the magnitude and dynamic characteristics of the electric load demanded of the cell can directly impact the long-term efficacy of the cell's chemical to electrical energy conversion. Second, the electric terminal response to dynamic loads can be exploited for monitoring the cell's conversion side processes and used in diagnostic analysis and degradation-mitigating control schemes. This dissertation presents a multi-tier investigation into this electric terminal based performance characterization of SOFCs through the development of novel test systems, analysis techniques and control schemes. First, a reference-based simulation system is introduced. This system scales up the electric terminal performance of a prototype SOFC system, e.g. a single fuel cell, to that of a full power-level stack. This allows realistic stack/load interaction studies while maintaining explicit ability for post-test analysis of the prototype system. Next, a time-domain least squares fitting method for electrochemical impedance spectroscopy (EIS) is developed for reduced-time monitoring of the electrochemical and physicochemical mechanics of the fuel cell through its electric terminals. The utility of the reference-based simulator and the EIS technique are demonstrated through their combined use in the performance testing of a hybrid-source power management (HSPM) system designed to allow in-situ EIS monitoring of a stack under dynamic loading conditions. The results from the latter study suggest that an HSPM controller allows an opportunity for in-situ electric terminal monitoring and control-based mitigation of SOFC degradation. As such, an exploration of control-based SOFC degradation mitigation is presented and ideas for further work are suggested.

Ti:LiNbO3 Integrated Optic Electric-Field Sensors based on Electro-Optic Effect

NASA Astrophysics Data System (ADS)

Jung, Hongsik

2016-07-01

The need for electric-field sensing technology has widely increased, playing a critical role in various scientific and technical areas. This article comprehensively reviews and compares Ti:LiNbO3 integrated optic electric-field sensors, including the asymmetric Mach-Zehnder interferometer (MZI), 1 × 2 directional coupler (DC), and Y-fed balanced-bridge Mach-Zehnder interferometer (YBB-MZI), based on the operating principles, the electrical and optical performance, and measurements of each fabricated device. We also discuss future works to improve the sensitivity, operating stability, response speed, and bandwidth.

Oil leakage detection for electric power equipment based on ultraviolet fluorescence effect

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Jian-hui; Xu, Bin; Huang, Zhi-dong; Huang, Lan-tao

2018-03-01

This paper presents a method to detect the oil leakage of high voltage power equipment based on ultraviolet fluorescence effect. The method exploits the principle that the insulating oil has the fluorescent effect under the irradiation of specific ultraviolet light. The emission spectrum of insulating oil under excitation light with different wavelengths is measured and analyzed first. On this basis, a portable oil leakage detective device for high voltage power equipment is designed and developed with a selected 365 nm ultraviolet as the excitation light and the low light level camera as the fluorescence image collector. Then, the feasibility of the proposed method and device in different conditions is experimentally verified in the laboratory environment. Finally, the developed oil leakage detective device is applied to 500 kV Xiamen substation and Quanzhou substation. And the results show that the device can detect the oil leakage of high voltage electrical equipment quickly and conveniently even under the condition of a slight oil leakage especially in the low light environment.

Advances in high temperature components for AMTEC (alkali metal thermal-to-electric converter)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, R.M.; Jeffries-Nakamura, B.; Underwood, M.L.

1991-12-31

Long lifetimes are required for AMTEC (or sodium heat engine) components for aerospace and terrestrial applications, and the high heat input temperature as well as the alkali metal liquid and vapor environment places unusual demands on the materials used to construct AMTEC devices. In addition, it is important to maximize device efficiency and power density, while maintaining a long life capability. In addition to the electrode, which must provide both efficient electrode kinetics, transport of the alkali metal, and low electrical resistance, other high temperature components of the cell face equally demanding requirements. The beta{double_prime} alumina solid electrolyte (BASE), themore » seal between the BASE ceramic and its metallic transition to the hot alkali metal (liquid or vapor) source, and metallic components of the device are exposed to hot liquid alkali metal. Modification of AMTEC components may also be useful in optimizing the device for particular operating conditions. In particular, a potassium AMTEC may be expected to operate more efficiently at lower temperatures.« less

Advances in high temperature components for AMTEC (alkali metal thermal-to-electric converter)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, R.M.; Jeffries-Nakamura, B.; Underwood, M.L.

1991-01-01

Long lifetimes are required for AMTEC (or sodium heat engine) components for aerospace and terrestrial applications, and the high heat input temperature as well as the alkali metal liquid and vapor environment places unusual demands on the materials used to construct AMTEC devices. In addition, it is important to maximize device efficiency and power density, while maintaining a long life capability. In addition to the electrode, which must provide both efficient electrode kinetics, transport of the alkali metal, and low electrical resistance, other high temperature components of the cell face equally demanding requirements. The beta{double prime} alumina solid electrolyte (BASE),more » the seal between the BASE ceramic and its metallic transition to the hot alkali metal (liquid or vapor) source, and metallic components of the device are exposed to hot liquid alkali metal. Modification of AMTEC components may also be useful in optimizing the device for particular operating conditions. In particular, a potassium AMTEC may be expected to operate more efficiently at lower temperatures.« less

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{submore » x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.« less

Self-Powered Wearable Electronics Based on Moisture Enabled Electricity Generation.

PubMed

Shen, Daozhi; Xiao, Ming; Zou, Guisheng; Liu, Lei; Duley, Walter W; Zhou, Y Norman

2018-05-01

Most state-of-the-art electronic wearable sensors are powered by batteries that require regular charging and eventual replacement, which would cause environmental issues and complex management problems. Here, a device concept is reported that can break this paradigm in ambient moisture monitoring-a new class of simple sensors themselves can generate moisture-dependent voltage that can be used to determine the ambient humidity level directly. It is demonstrated that a moisture-driven electrical generator, based on the diffusive flow of water in titanium dioxide (TiO 2 ) nanowire networks, can yield an output power density of up to 4 µW cm -2 when exposed to a highly moist environment. This performance is two orders of magnitude better than that reported for carbon-black generators. The output voltage is strongly dependent on humidity of ambient environment. As a big breakthrough, this new type of device is successfully used as self-powered wearable human-breathing monitors and touch pads, which is not achievable by any existing moisture-induced-electricity technology. The availability of high-output self-powered electrical generators will facilitate the design and application of a wide range of new innovative flexible electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators.

PubMed

Bernardi, Michael P; Dupré, Olivier; Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe; Francoeur, Mathieu

2015-06-26

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

PubMed Central

Bernardi, Michael P.; Dupré, Olivier; Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe; Francoeur, Mathieu

2015-01-01

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses. PMID:26112658

Non-Nuclear Alternatives to Monitoring Moisture-Density Response in Soils

DTIC Science & Technology

2013-03-01

devices can be done pretest or posttest , as they all provide a means to correct the raw field data readings. Moisture Density Indicator (M+DI) The...obtained from the soil nuclear density gauge. The devices and techniques that were tested are grouped into four broad families: nuclear, electrical...43  Details of device rejection based on errors .............................................................................. 43  Accuracy of

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Towards electrical spin injection into LaAlO3-SrTiO3.

PubMed

Bibes, M; Reyren, N; Lesne, E; George, J-M; Deranlot, C; Collin, S; Barthélémy, A; Jaffrès, H

2012-10-28

Future spintronics devices will be built from elemental blocks allowing the electrical injection, propagation, manipulation and detection of spin-based information. Owing to their remarkable multi-functional and strongly correlated character, oxide materials already provide such building blocks for charge-based devices such as ferroelectric field-effect transistors (FETs), as well as for spin-based two-terminal devices such as magnetic tunnel junctions, with giant responses in both cases. Until now, the lack of suitable channel materials and the uncertainty of spin-injection conditions in these compounds had however prevented the exploration of similar giant responses in oxide-based lateral spin transport structures. In this paper, we discuss the potential of oxide-based spin FETs and report magnetotransport data that suggest electrical spin injection into the LaAlO(3)-SrTiO(3) interface system. In a local, three-terminal measurement scheme, we analyse the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or longitudinal magnetic fields (Hanle and 'inverted' Hanle effects). The spin accumulation signal appears to be much larger than expected, probably owing to amplification effects by resonant tunnelling through localized states in the LaAlO(3). We give perspectives on how to achieve direct spin injection with increased detection efficiency, as well on the implementation of efficient top gating schemes for spin manipulation.

Synthesis and processing of materials for direct thermal-to-electric energy conversion and storage

NASA Astrophysics Data System (ADS)

Thompson, Travis

Currently, fossil fuels are the primary source of energy. Mechanical heat engines convert the chemical potential energy in fossil fuels to useful electrical energy through combustion; a relatively low efficiency process that generates carbon dioxide. This practice has led to a significant increase in carbon dioxide emissions and is contributing to climate change. However, not all heat engines are mechanical. Alternative energy generation technologies to mechanical heat engines are known, yet underutilized. Thermoelectric generators are solid-state devices originally developed by NASA to power deep space spacecraft, which can also convert heat into electricity but without any moving parts. Similar to their mechanical counterparts, any heat source, including the burning of fossil fuels, can be used. However, clean heat sources, such as concentrated solar, can alternatively be used. Since the energy sources for many of the alternative energy technologies is intermittent, including concentrated solar for thermoelectric devices, load matching is difficult or impossible and an energy storage technology is needed in addition to the energy conversion technology. This increases the overall cost and complexity of the systems since two devices are required and represents a significant barrier for mass adoption of an alternative energy technology. However, it is possible to convert heat energy to electrical energy and store excess charge for use at a later time when the demand increases, in a single device. One such of a device is a thermogalvanic generator and is the electrochemical analog of electronic thermoelectric devices. Essentially, a thermogalvanic device represents the combination of thermoelectric and galvanic systems. As such, the rich history of strategies developed by both the thermoelectric community to better the performance of thermoelectric devices and by the electrochemical community to better traditional galvanic devices (i.e. batteries) can be applied to thermogalvanic devices. Although thermogalvanic devices are known, there has been little exploration into the use of thermogalvanic devices for power generation and energy storage. First, this work formalizes the energy problem and introduces the operating principles of thermoelectric, galvanic, and thermogalvanic devices. Second, oxide based thermoelectric materials are explored from a synthetic and processing standpoint. Out of necessity, a new synthetic technique was invented and a novel hot-press technique was developed. Third, a solid Li-ion conducting electrolyte, based on the garnet crystal structure, is identified for the use in a thermogalvanic cell. In order to better understand the conductivity behavior, an in-depth exploration into the variables that control the ionic transport is performed on the electrolyte. Third, a thermogalvanic cell is constructed using this garnet based Li-ion conducting solid electrolyte and the first demonstration of such a cell is presented. Finally, strategies to improve the performance of thermogalvanic cells based on garnet type solid electrolytes are outlined for future work. The purpose of this work is to use an interdisciplinary approach to marry together the electrochemistry of galvanic systems with the strategies used to better semiconductor based thermoelectric materials and ceramics processing techniques to fabricate these systems. This dissertation will explore the interplay of these areas.

Current Radiation Issues for Programmable Elements and Devices

NASA Technical Reports Server (NTRS)

Katz, R.; Wang, J. J.; Koga, R.; LaBel, A.; McCollum, J.; Brown, R.; Reed, R. A.; Cronquist, B.; Crain, S.; Scott, T.;

Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate 'bond and peel' method.

PubMed

Liu, Wenjie; Hu, Xiaolong; Zou, Qiushun; Wu, Shaoying; Jin, Chongjun

2018-06-15

External light sources are mostly employed to functionalize the plasmonic components, resulting in a bulky footprint. Electrically driven integrated plasmonic devices, combining ultra-compact critical feature sizes with extremely high transmission speeds and low power consumption, can link plasmonics with the present-day electronic world. In an effort to achieve this prospect, suppressing the losses in the plasmonic devices becomes a pressing issue. In this work, we developed a novel polymethyl methacrylate 'bond and peel' method to fabricate metal films with sub-nanometer smooth surfaces on semiconductor wafers. Based on this method, we further fabricated a compact plasmonic source containing a metal-insulator-metal (MIM) waveguide with an ultra-smooth metal surface on a GaAs-based light-emitting diode wafer. An increase in propagation length of the SPP mode by a factor of 2.95 was achieved as compared with the conventional device containing a relatively rough metal surface. Numerical calculations further confirmed that the propagation length is comparable to the theoretical prediction on the MIM waveguide with perfectly smooth metal surfaces. This method facilitates low-loss and high-integration of electrically driven plasmonic devices, thus provides an immediate opportunity for the practical application of on-chip integrated plasmonic circuits.

Low-loss integrated electrical surface plasmon source with ultra-smooth metal film fabricated by polymethyl methacrylate ‘bond and peel’ method

NASA Astrophysics Data System (ADS)

Liu, Wenjie; Hu, Xiaolong; Zou, Qiushun; Wu, Shaoying; Jin, Chongjun

2018-06-01

External light sources are mostly employed to functionalize the plasmonic components, resulting in a bulky footprint. Electrically driven integrated plasmonic devices, combining ultra-compact critical feature sizes with extremely high transmission speeds and low power consumption, can link plasmonics with the present-day electronic world. In an effort to achieve this prospect, suppressing the losses in the plasmonic devices becomes a pressing issue. In this work, we developed a novel polymethyl methacrylate ‘bond and peel’ method to fabricate metal films with sub-nanometer smooth surfaces on semiconductor wafers. Based on this method, we further fabricated a compact plasmonic source containing a metal-insulator-metal (MIM) waveguide with an ultra-smooth metal surface on a GaAs-based light-emitting diode wafer. An increase in propagation length of the SPP mode by a factor of 2.95 was achieved as compared with the conventional device containing a relatively rough metal surface. Numerical calculations further confirmed that the propagation length is comparable to the theoretical prediction on the MIM waveguide with perfectly smooth metal surfaces. This method facilitates low-loss and high-integration of electrically driven plasmonic devices, thus provides an immediate opportunity for the practical application of on-chip integrated plasmonic circuits.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Variable temperature performance of a fully screen printed transistor switch

NASA Astrophysics Data System (ADS)

Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

2016-12-01

This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

Performance enhancement of a rotational energy harvester utilizing wind-induced vibration of an inclined stay cable

NASA Astrophysics Data System (ADS)

Kim, In-Ho; Jang, Seon-Jun; Jung, Hyung-Jo

2013-07-01

In this paper, an innovative strategy for improving the performance of a recently developed rotational energy harvester is proposed. Its performance can be considerably enhanced by replacing the electromagnetic induction part, consisting of moving permanent magnets and a fixed solenoid coil, with a moving mass and a rotational generator (i.e., an electric motor). The proposed system is easily tuned to the natural frequency of a target structure using the position change of a proof mass. Owing to the high efficiency of the rotational generator, the device can more effectively harness electrical energy from the wind-induced vibration of a stay cable. Also, this new configuration makes the device more compact and geometrically tunable. In order to validate the effectiveness of the new configuration, a series of laboratory and field tests are carried out with the prototype of the proposed device, which is designed and fabricated based on the dynamic characteristics of the vibration of a stay cable installed in an in-service cable-stayed bridge. From the field test, it is observed that the normalized output power of the proposed system is 35.67 mW (m s-2)-2, while that of the original device is just 5.47 mW (m s-2)-2. These results show that the proposed device generates much more electrical energy than the original device. Moreover, it is verified that the proposed device can generate sufficient electricity to power a wireless sensor node placed on a cable under gentle-moderate wind conditions.

A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

PubMed Central

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-01-01

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S. PMID:25521385

A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.

PubMed

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-12-16

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in "H" type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than -0.01% F.S/°C in the range of -40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

Intelligent vehicle electrical power supply system with central coordinated protection

NASA Astrophysics Data System (ADS)

Yang, Diange; Kong, Weiwei; Li, Bing; Lian, Xiaomin

2016-07-01

The current research of vehicle electrical power supply system mainly focuses on electric vehicles (EV) and hybrid electric vehicles (HEV). The vehicle electrical power supply system used in traditional fuel vehicles is rather simple and imperfect; electrical/electronic devices (EEDs) applied in vehicles are usually directly connected with the vehicle's battery. With increasing numbers of EEDs being applied in traditional fuel vehicles, vehicle electrical power supply systems should be optimized and improved so that they can work more safely and more effectively. In this paper, a new vehicle electrical power supply system for traditional fuel vehicles, which accounts for all electrical/electronic devices and complex work conditions, is proposed based on a smart electrical/electronic device (SEED) system. Working as an independent intelligent electrical power supply network, the proposed system is isolated from the electrical control module and communication network, and access to the vehicle system is made through a bus interface. This results in a clean controller power supply with no electromagnetic interference. A new practical battery state of charge (SoC) estimation method is also proposed to achieve more accurate SoC estimation for lead-acid batteries in traditional fuel vehicles so that the intelligent power system can monitor the status of the battery for an over-current state in each power channel. Optimized protection methods are also used to ensure power supply safety. Experiments and tests on a traditional fuel vehicle are performed, and the results reveal that the battery SoC is calculated quickly and sufficiently accurately for battery over-discharge protection. Over-current protection is achieved, and the entire vehicle's power utilization is optimized. For traditional fuel vehicles, the proposed vehicle electrical power supply system is comprehensive and has a unified system architecture, enhancing system reliability and security.

Developing Control System of Electrical Devices with Operational Expense Prediction

NASA Astrophysics Data System (ADS)

Sendari, Siti; Wahyu Herwanto, Heru; Rahmawati, Yuni; Mukti Putranto, Dendi; Fitri, Shofiana

2017-04-01

The purpose of this research is to develop a system that can monitor and record home electrical device’s electricity usage. This system has an ability to control electrical devices in distance and predict the operational expense. The system was developed using micro-controllers and WiFi modules connected to PC server. The communication between modules is arranged by server via WiFi. Beside of reading home electrical devices electricity usage, the unique point of the proposed-system is the ability of micro-controllers to send electricity data to server for recording the usage of electrical devices. The testing of this research was done by Black-box method to test the functionality of system. Testing system run well with 0% error.

Flex-gear electrical power transmission

NASA Technical Reports Server (NTRS)

Vranish, John; Peritt, Jonathan

1993-01-01

This study was conducted to develop an alternative way of transferring electricity across a continuously rotating joint, with little wear and the potential for low electrical noise. The problems with wires, slip rings, electromagnetic couplings, and recently invented roll-rings are discussed. Flex-gears, an improvement of roll-rings, are described. An entire class of flexgear devices is developed. Finally, the preferred flex-gear device is optimized for maximum electrical contact and analyzed for average mechanical power loss and maximum stress. For a device diameter of six inches, the preferred device is predicted to have a total electrical contact area of 0.066 square inches. In the preferred device, a small amount of internal sliding produces a 0.003 inch-pound torque that resists the motion of the device.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

In situ calibration of a light source in a sensor device

DOEpatents

Okandan, Murat; Serkland, Darwin k.; Merchant, Bion J.

2015-12-29

A sensor device is described herein, wherein the sensor device includes an optical measurement system, such as an interferometer. The sensor device further includes a low-power light source that is configured to emit an optical signal having a constant wavelength, wherein accuracy of a measurement output by the sensor device is dependent upon the optical signal having the constant wavelength. At least a portion of the optical signal is directed to a vapor cell, the vapor cell including an atomic species that absorbs light having the constant wavelength. A photodetector captures light that exits the vapor cell, and generates an electrical signal that is indicative of intensity of the light that exits the vapor cell. A control circuit controls operation of the light source based upon the electrical signal, such that the light source emits the optical signal with the constant wavelength.

Electrochemically driven mechanical energy harvesting.

PubMed

Kim, Sangtae; Choi, Soon Ju; Zhao, Kejie; Yang, Hui; Gobbi, Giorgia; Zhang, Sulin; Li, Ju

2016-01-06

Efficient mechanical energy harvesters enable various wearable devices and auxiliary energy supply. Here we report a novel class of mechanical energy harvesters via stress-voltage coupling in electrochemically alloyed electrodes. The device consists of two identical Li-alloyed Si as electrodes, separated by electrolyte-soaked polymer membranes. Bending-induced asymmetric stresses generate chemical potential difference, driving lithium ion flux from the compressed to the tensed electrode to generate electrical current. Removing the bending reverses ion flux and electrical current. Our thermodynamic analysis reveals that the ideal energy-harvesting efficiency of this device is dictated by the Poisson's ratio of the electrodes. For the thin-film-based energy harvester used in this study, the device has achieved a generating capacity of 15%. The device demonstrates a practical use of stress-composition-voltage coupling in electrochemically active alloys to harvest low-grade mechanical energies from various low-frequency motions, such as everyday human activities.

Electrochemically driven mechanical energy harvesting

PubMed Central

Kim, Sangtae; Choi, Soon Ju; Zhao, Kejie; Yang, Hui; Gobbi, Giorgia; Zhang, Sulin; Li, Ju

2016-01-01

Efficient mechanical energy harvesters enable various wearable devices and auxiliary energy supply. Here we report a novel class of mechanical energy harvesters via stress–voltage coupling in electrochemically alloyed electrodes. The device consists of two identical Li-alloyed Si as electrodes, separated by electrolyte-soaked polymer membranes. Bending-induced asymmetric stresses generate chemical potential difference, driving lithium ion flux from the compressed to the tensed electrode to generate electrical current. Removing the bending reverses ion flux and electrical current. Our thermodynamic analysis reveals that the ideal energy-harvesting efficiency of this device is dictated by the Poisson's ratio of the electrodes. For the thin-film-based energy harvester used in this study, the device has achieved a generating capacity of 15%. The device demonstrates a practical use of stress-composition–voltage coupling in electrochemically active alloys to harvest low-grade mechanical energies from various low-frequency motions, such as everyday human activities. PMID:26733282

Semiconductor technology program: Progress briefs

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Scace, R. I.; Walters, E. J.

1981-01-01

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Light emission from organic single crystals operated by electrolyte doping

NASA Astrophysics Data System (ADS)

Matsuki, Keiichiro; Sakanoue, Tomo; Yomogida, Yohei; Hotta, Shu; Takenobu, Taishi

2018-03-01

Light-emitting devices based on electrolytes, such as light-emitting electrochemical cells (LECs) and electric double-layer transistors (EDLTs), are solution-processable devices with a very simple structure. Therefore, it is necessary to apply this device structure into highly fluorescent organic materials for future printed applications. However, owing to compatibility problems between electrolytes and organic crystals, electrolyte-based single-crystal light-emitting devices have not yet been demonstrated. Here, we report on light-emitting devices based on organic single crystals and electrolytes. As the fluorescent materials, α,ω-bis(biphenylyl)terthiophene (BP3T) and 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals were selected. Using ionic liquids as electrolytes, we observed clear light emission from BP3T LECs and rubrene EDLTs.

High-Frequency Switching Transients and Power Loss Estimation in Electric Drive Systems that Utilize Wide-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Fulani, Olatunji T.

Development of electric drive systems for transportation and industrial applications is rapidly seeing the use of wide-bandgap (WBG) based power semiconductor devices. These devices, such as SiC MOSFETs, enable high switching frequencies and are becoming the preferred choice in inverters because of their lower switching losses and higher allowable operating temperatures. Due to the much shorter turn-on and turn-off times and correspondingly larger output voltage edge rates, traditional models and methods previously used to estimate inverter and motor power losses, based upon a triangular power loss waveform, are no longer justifiable from a physical perspective. In this thesis, more appropriate models and a power loss calculation approach are described with the goal of more accurately estimating the power losses in WBG-based electric drive systems. Sine-triangle modulation with third harmonic injection is used to control the switching of the inverter. The motor and inverter models are implemented using Simulink and computer studies are shown illustrating the application of the new approach.

Developing ultrasensitive pressure sensor based on graphene nanoribbon: Molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Kwon, Oh Kuen; Lee, Jun Ha; Kim, Ki-Sub; Kang, Jeong Won

2013-01-01

We propose schematics for an ultra-sensitive pressure sensor based on graphene-nanoribbon (GNR) and investigate its electromechanical properties using classical molecular dynamics simulations and piezo-electricity theory. Since the top plate applied to the actual pressure is large whereas the contact area on the GNR is very small, both the sensitivity and the sensing range can be adjusted by controlling the aspect ratio between the top plate and the contact point areas. Our calculation shows that the electrical conductivity of GNRs can be tuned by the applied pressure and the electric conductance of the deflected GNR linearly increases with increasing applied pressure for the linear elastic region in low pressure below the cut-off point. In the curves for both the deflection and potential energy, the linear elastic regime in low pressure was explicitly separated with the non-linear elastic regime in high pressure. The proposed GNR-based nanoelectromechanical devices have great potential for application as electromechanical memory, relay or switching devices.

Real-time dual-loop electric current measurement for label-free nanofluidic preconcentration chip.

PubMed

Chung, Pei-Shan; Fan, Yu-Jui; Sheen, Horn-Jiunn; Tian, Wei-Cheng

2015-01-07

An electrokinetic trapping (EKT)-based nanofluidic preconcentration device with the capability of label-free monitoring trapped biomolecules through real-time dual-loop electric current measurement was demonstrated. Universal current-voltage (I-V) curves of EKT-based preconcentration devices, consisting of two microchannels connected by ion-selective channels, are presented for functional validation and optimal operation; universal onset current curves indicating the appearance of the EKT mechanism serve as a confirmation of the concentrating action. The EKT mechanism and the dissimilarity in the current curves related to the volume flow rate (Q), diffusion coefficient (D), and diffusion layer (DL) thickness were explained by a control volume model with a five-stage preconcentration process. Different behaviors of the trapped molecular plug were categorized based on four modes associated with different degrees of electroosmotic instability (EOI). A label-free approach to preconcentrating (bio)molecules and monitoring the multibehavior molecular plug was demonstrated through real-time electric current monitoring, rather than through the use of microscope images.

The Development and Application of Simulative Insulation Resistance Tester

NASA Astrophysics Data System (ADS)

Jia, Yan; Chai, Ziqi; Wang, Bo; Ma, Hao

2018-02-01

The insulation state determines the performance and insulation life of electrical equipment, so it has to be judged in a timely and accurate manner. Insulation resistance test, as the simplest and most basic test of high voltage electric tests, can measure the insulation resistance and absorption ratio which are effective criterion of part or whole damp or dirty, breakdown, severe overheating aging and other insulation defects. It means that the electrical test personnel need to be familiar with the principle of insulation resistance test, and able to operate the insulation resistance tester correctly. At present, like the insulation resistance test, most of electrical tests are trained by physical devices with the real high voltage. Although this allows the students to truly experience the test process and notes on security, it also has certain limitations in terms of safety and test efficiency, especially for a large number of new staves needing induction training every year. This paper presents a new kind of electrical test training system based on the simulative device of dielectric loss measurement and simulative electrical testing devices. It can not only overcome the defects of current training methods, but also provide other advantages in economical efficiency and scalability. That makes it possible for the system to be allied in widespread.

High photoresponse of individual WS2 nanowire-nanoflake hybrid materials

NASA Astrophysics Data System (ADS)

Asres, Georgies Alene; Järvinen, Topias; Lorite, Gabriela S.; Mohl, Melinda; Pitkänen, Olli; Dombovari, Aron; Tóth, Geza; Spetz, Anita Lloyd; Vajtai, Robert; Ajayan, Pulickel M.; Lei, Sidong; Talapatra, Saikat; Kordas, Krisztian

2018-06-01

van der Waals solids have been recognized as highly photosensitive materials that compete conventional Si and compound semiconductor based devices. While 2-dimensional nanosheets of single and multiple layers and 1-dimensional nanowires of molybdenum and tungsten chalcogenides have been studied, their nanostructured derivatives with complex morphologies are not explored yet. Here, we report on the electrical and photosensitive properties of WS2 nanowire-nanoflake hybrid materials we developed lately. We probe individual hybrid nanostructured particles along the structure using focused ion beam deposited Pt contacts. Further, we use conductive atomic force microscopy to analyze electrical behavior across the nanostructure in the transverse direction. The electrical measurements are complemented by in situ laser beam illumination to explore the photoresponse of the nanohybrids in the visible optical spectrum. Photodetectors with responsivity up to ˜0.4 AW-1 are demonstrated outperforming graphene as well as most of the other transition metal dichalcogenide based devices.

Investigation of Perception in Electric Field based on Scholastic Tests of National Institute for Educational Policy Research

NASA Astrophysics Data System (ADS)

Eguchi, Kei; Sugimura, Tatsuya; Watanabe, Toshiya; Kurebayashi, Shuji

To investigate the perception of science and technology of university students, the scholastic test concerning electric field was conducted in this paper. The scholastic test, which was conducted to university students, is based on the scholastic test provided by the National Institute for Educational Policy Research of Japan's Curriculum Research Center. The result of the scholastic test showed that 1. For the questions related to “A4(i): Maintenance check and prevention of accidents of equipment” in the junior high school government guidelines for teaching, the percentage of correct answer was the lowest and 2. Not only liberal arts course students but also science course students do not have sufficient perception concerning the capability of “Device and Creativity”, because the percentage of correct answer to the questions concerning “Device and Creativity” was about 70%. The results of this study will give us the directivity of electricity education.

Pioneer Design of Non-contact Synchronized Measurement Devices Using Electric and Magnetic Field Sensors

DOE PAGES

Yao, Wenxuan; Zhang, Yingchen; Liu, Yong; ...

2017-04-10

Traditional synchrophasors rely on CTs and PTs physically connected to transmission lines or buses to acquire input signals for phasor measurement. However, it is challenging to install and maintain traditional phasor measurement units in some remote areas due to lack of facilities. Since transmission lines naturally generate alternating electrical and magnetic fields in the surrounding atmosphere, this paper presents two innovative designs for non-contact synchronized measurement devices (NCSMD), including an electric field sensor based non-contact SMD (E-NCSMD) and a magnetic field sensor based non-contact SMD (M-NCSMD). Compared with conventional synchrophasors, E-NCSMD and M-NCSMD are much more flexible to be deployedmore » and have much lower costs, making E-NCSMDs and M-NCSMD highly accessible and useful for a wide array of phasor measurement applications. Laboratory and field experiment results verified the effectiveness of the designs of both E-NCSMD and M-NCSMD.« less

Pioneer Design of Non-contact Synchronized Measurement Devices Using Electric and Magnetic Field Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Wenxuan; Zhang, Yingchen; Liu, Yong

Traditional synchrophasors rely on CTs and PTs physically connected to transmission lines or buses to acquire input signals for phasor measurement. However, it is challenging to install and maintain traditional phasor measurement units in some remote areas due to lack of facilities. Since transmission lines naturally generate alternating electrical and magnetic fields in the surrounding atmosphere, this paper presents two innovative designs for non-contact synchronized measurement devices (NCSMD), including an electric field sensor based non-contact SMD (E-NCSMD) and a magnetic field sensor based non-contact SMD (M-NCSMD). Compared with conventional synchrophasors, E-NCSMD and M-NCSMD are much more flexible to be deployedmore » and have much lower costs, making E-NCSMDs and M-NCSMD highly accessible and useful for a wide array of phasor measurement applications. Laboratory and field experiment results verified the effectiveness of the designs of both E-NCSMD and M-NCSMD.« less

A novel single-stranded DNA detection method based on organic semiconductor heterojunction

NASA Astrophysics Data System (ADS)

Gu, Wen; Liu, Hongbo; Zhang, Xia; Zhang, Hao; Chen, Xiong; Wang, Jun

2016-12-01

We demonstrate a novel DNA detection method with low-cost and disposable advantages by utilizing F16CuPc/CuPc planar organic heterojunction device. Single-stranded DNA (ssDNA) molecules have been well immobilized on the surface of CuPc film observed by atomic force microscopy, producing an obvious electrical response of the device. The conductivity of the organic heterojunction film was significantly increased by ssDNA immobilization because ssDNA molecules brought additional positive charges at heterojunction interface. Furthermore, the thickness dependence of CuPc upper layer on the electrical response was studied to optimize the sensitivity. This study will be helpful for the development of organic heterojunction based biosensors.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

PubMed

Fragkos, Ioannis E; Dierolf, Volkmar; Fujiwara, Yasufumi; Tansu, Nelson

2017-12-01

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu +3 ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu +3 ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

NASA Astrophysics Data System (ADS)

Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

2018-02-01

Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

Engineering model of the electric drives of separation device for simulation of automatic control systems of reactive power compensation by means of serially connected capacitors

NASA Astrophysics Data System (ADS)

Juromskiy, V. M.

2016-09-01

It is developed a mathematical model for an electric drive of high-speed separation device in terms of the modeling dynamic systems Simulink, MATLAB. The model is focused on the study of the automatic control systems of the power factor (Cosφ) of an actuator by compensating the reactive component of the total power by switching a capacitor bank in series with the actuator. The model is based on the methodology of the structural modeling of dynamic processes.

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

NASA Astrophysics Data System (ADS)

Kanaki, Toshiki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2016-10-01

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet/nonferromagnet/ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.

University of Maryland MRSEC - Research: IRG1

Science.gov Websites

structure based on fundamental interactions, to device preparation and characterization. Materials systems figure: Electrical current in nanoscale structure perturbed by scattering at atomic scale features on its surfaces. An electrical current in a nanoscale structure is perturbed by scattering at atomic scale

Mitigation of Electrical Failure of Silver Nanowires under Current Flow and the Application for Long Lifetime Organic Light-Emitting Diodes

DOE PAGES

Chen, Dustin; Zhao, Fangchao; Tong, Kwing; ...

2016-07-08

Here, the extended lifetime of organic light-emitting diodes (OLEDs) based on enhanced electrical stability of a silver nanowire (AgNW) transparent conductive electrode is reported. Specifically, in depth investigation is performed on the ability of atomic layer deposition deposited zinc oxide (ZnO) on AgNWs to render the nanowires electrically stable during electrical stressing at the range of operational current density used for OLED lighting. ZnO-coated AgNWs have been observed to show no electrical, optical, or morphological degradation, while pristine AgNW electrodes have become unusable for optoelectronic devices due to dramatic decreases in conductivity, transparency, and fragmentation of the nanowire network atmore » ≈150 mA cm -2. When fabricated into OLED substrates, resulting OLEDs fabricated on the ZnO-AgNW platform exhibit a 140% increase in lifetime when compared to OLEDs fabricated on indium tin oxide (ITO)/glass, and ≈20% when compared to OLEDs fabricated on AgNW based substrates. While both ZnO-coated and pristine AgNW substrates outperform ITO/glass due to the lower current densities required to drive the device, morphological stability in response to current stressing is responsible for the enhancement of lifetime of ZnO-AgNW based OLEDs compared to pristine AgNW based OLEDs.« less

Deposition and characterization of vanadium oxide based thin films for MOS device applications

NASA Astrophysics Data System (ADS)

Rakshit, Abhishek; Biswas, Debaleen; Chakraborty, Supratic

2018-04-01

Vanadium Oxide films are deposited on Si (100) substrate by reactive RF-sputtering of a pure Vanadium metallic target in an Argon-Oxygen plasma environment. The ratio of partial pressures of Argon to Oxygen in the sputtering-chamber is varied by controlling their respective flow rates and the resultant oxide films are obtained. MOS Capacitor based devices are then fabricated using the deposited oxide films. High frequency Capacitance-Voltage (C-V) and gate current-gate voltage (I-V) measurements reveal a significant dependence of electrical characteristics of the deposited films on their sputtering deposition parameters mainly, the relative content of Argon/Oxygen in the plasma chamber. A noteworthy change in the electrical properties is observed for the films deposited under higher relative oxygen content in the plasma atmosphere. Our results show that reactive sputtering serves as an indispensable deposition-setup for fabricating vanadium oxide based MOS devices tailor-made for Non-Volatile Memory (NVM) applications.

Electronic Health Management

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Saha, Sankalita; Goebel, Kai

2011-01-01

Accelerated aging methodologies for electrolytic components have been designed and accelerated aging experiments have been carried out. The methodology is based on imposing electrical and/or thermal overstresses via electrical power cycling in order to mimic the real world operation behavior. Data are collected in-situ and offline in order to periodically characterize the devices' electrical performance as it ages. The data generated through these experiments are meant to provide capability for the validation of prognostic algorithms (both model-based and data-driven). Furthermore, the data allow validation of physics-based and empirical based degradation models for this type of capacitor. A first set of models and algorithms has been designed and tested on the data.

Electromechanical oscillations in bilayer graphene

PubMed Central

Benameur, Muhammed M.; Gargiulo, Fernando; Manzeli, Sajedeh; Autès, Gabriel; Tosun, Mahmut; Yazyev, Oleg V.; Kis, Andras

2015-01-01

Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron–phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in applications based on nanoelectromechanical systems. PMID:26481767

Stencil Nano Lithography Based on a Nanoscale Polymer Shadow Mask: Towards Organic Nanoelectronics

PubMed Central

Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E. B.; Hyoung Lee, Wi; Wook Lee, Sang

2015-01-01

A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices. PMID:25959389

Stencil nano lithography based on a nanoscale polymer shadow mask: towards organic nanoelectronics.

PubMed

Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E B; Hyoung Lee, Wi; Wook Lee, Sang

2015-05-11

A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices.

Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

PubMed

Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

2015-11-06

The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

Monitoring method and apparatus using high-frequency carrier

DOEpatents

Haynes, Howard D.

1996-01-01

A method and apparatus for monitoring an electrical-motor-driven device by injecting a high frequency carrier signal onto the power line current. The method is accomplished by injecting a high frequency carrier signal onto an AC power line current. The AC power line current supplies the electrical-motor-driven device with electrical energy. As a result, electrical and mechanical characteristics of the electrical-motor-driven device modulate the high frequency carrier signal and the AC power line current. The high frequency carrier signal is then monitored, conditioned and demodulated. Finally, the modulated high frequency carrier signal is analyzed to ascertain the operating condition of the electrical-motor-driven device.

Electric turbocompound control system

DOEpatents

Algrain, Marcelo C [Dunlap, IL

2007-02-13

Turbocompound systems can be used to affect engine operation using the energy in exhaust gas that is driving the available turbocharger. A first electrical device acts as a generator in response to turbocharger rotation. A second electrical device acts as a motor to put mechanical power into the engine, typically at the crankshaft. Apparatus, systems, steps, and methods are described to control the generator and motor operations to control the amount of power being recovered. This can control engine operation closer to desirable parameters for given engine-related operating conditions compared to actual. The electrical devices can also operate in "reverse," going between motor and generator functions. This permits the electrical device associated with the crankshaft to drive the electrical device associated with the turbocharger as a motor, overcoming deficient engine operating conditions such as associated with turbocharger lag.

Method to tune electrical impedance of LSMO/PMN-PT by nanocontact

NASA Astrophysics Data System (ADS)

Zhou, Hao; Pei, Yongmao; Wang, Yaobing; Lei, Hongshuai

2018-01-01

Electromagnetic composites have wide application in the functional devices. For the best performance of devices, the regulation of the electrical impedance has been being desired for the impedance matching in service. However, the keeping of impedance matching in service is quite challenging. In the present work, a mechanical method for tuning the electrical impedance of La0.7Sr0.3MnO3/0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (LSMO/PMN-PT) based on the nanocontact technique is proposed. It is found that the electrical impedance reduces with the increase of the nanocontact load. A linear relationship is found between the square of impedance magnitude and the inverse of nanocontact depth. Furthermore, a method for predicting the contact-depth-dependent impedance magnitude of LSMO/PMN-PT is proposed.

Heterogeneous 3D optrode with variable spatial resolution for optogenetic stimulation and electrophysiological recording.

PubMed

Ayub, Suleman; Barz, Falk; Paul, Oliver; Ruther, Patrick

2016-08-01

We report on the concept, development, and geometrical, optical as well as electrical characterization of the first three-dimensional (3D) optrode. This new device allows to optically interact with neuronal cells and simultaneously record their response with a high spatial resolution. Our design is based on a single-shank optical stimulation component and a multi-shank recording probe stacked together in a delicate assembly process. The electrical connection of both components is ensured by using flexible polyimide (PI) ribbon cables. The highly accurate relative positioning and precise alignment of the optical and electrical components in 3D with an optical output power at 460 nm well above 5 mW/mm2 and an all-electrical interface makes this device a promising tool for optogenetic experiments in neuroscientific research.

A new solution of measuring thermal response of prestressed concrete bridge girders for structural health monitoring

NASA Astrophysics Data System (ADS)

Jiao, Pengcheng; Borchani, Wassim; Hasni, Hassene; Lajnef, Nizar

2017-08-01

This study develops a novel buckling-based mechanism to measure the thermal response of prestressed concrete bridge girders under continuous temperature changes for structural health monitoring. The measuring device consists of a bilaterally constrained beam and a piezoelectric polyvinylidene fluoride transducer that is attached to the beam. Under thermally induced displacement, the slender beam is buckled. The post-buckling events are deployed to convert the low-rate and low-frequency excitations into localized high-rate motions and, therefore, the attached piezoelectric transducer is triggered to generate electrical signals. Attaching the measuring device to concrete bridge girders, the electrical signals are used to detect the thermal response of concrete bridges. Finite element simulations are conducted to obtain the displacement of prestressed concrete girders under thermal loads. Using the thermal-induced displacement as input, experiments are carried out on a 3D printed measuring device to investigate the buckling response and corresponding electrical signals. A theoretical model is developed based on the nonlinear Euler-Bernoulli beam theory and large deformation assumptions to predict the buckling mode transitions of the beam. Based on the presented theoretical model, the geometry properties of the measuring device can be designed such that its buckling response is effectively controlled. Consequently, the thermally induced displacement can be designed as limit states to detect excessive thermal loads on concrete bridge girders. The proposed solution sufficiently measures the thermal response of concrete bridges.

Transport and recombination in organic light-emitting diodes studied by electrically detected magnetic resonance.

PubMed

Graeff, C F O; Silva, G B; Nüesch, F; Zuppiroli, L

2005-09-01

We have used electrically detected magnetic resonance (EDMR) to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline (Alq3). These devices were designed to identify the microscopic origin of different spin-dependent processes, i.e. hopping and exciton formation. The EDMR signal in organic light-emitting diodes (OLEDs) based on Alq3 is only observed when the device is electroluminescent and is assigned to spin-dependent exciton formation. It can be decomposed in at least two Gaussians: one with peak-to-peak line (deltaH(PP)) of 1.6 mT and another with deltaH(PP) of 2.0 to 3.4 mT, depending on bias and temperature. The g-factors of the two components are barely distinguishable and close to 2.003. The broad line is attributed to the resonance in Alq3 anions, while the other line is attributed to cationic states. These attributions are supported by line shape and its electrical-field dependence of unipolar Alq3-based diodes, where hopping process related to dication and dianion formation is observed. In these unipolar devices, it is shown that the signal coming from spin-dependent hopping occurs close to organic semiconductor/metal interfaces. The sign of the magnetic-resonance-induced conductivity change is dominated by charge injection rather than charge mobility. Our results indicate that the probability of singlet exciton formation in our OLEDs is smaller than 25%.

Subcritical crack growth phenomenon and fractography of barium titanate and barium titanate-based composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, H.J.; Niihara, Koichi

1997-01-15

Subcritical crack growth (SCG), the propagation of surface and subsurface flaws under subcritical stress, i.e., any stress less than that necessary to catastrophically propagate the flaw, is a general phenomenon frequently observed in ceramics. Recently, electrical devices are miniaturized and used under quite severe atmospheres. Such environments often lead to the initiation and propagation of cracks due to the repeated electrical cycling, stresses by the mismatch in thermal expansion coefficient between devices and other constituents and thermal shock. In this study, the authors fabricated BaTiO{sub 3} and BaTiO{sub 3}-based composites containing nano-sized SiC particulates. The SCG phenomenon and fractography weremore » discussed based on the data obtained from indentation-induced-fracture (IIF) method.« less

A flexible and portable powerpack by solid-state supercapacitor and dye-sensitized solar cell integration

NASA Astrophysics Data System (ADS)

Scalia, Alberto; Bella, Federico; Lamberti, Andrea; Bianco, Stefano; Gerbaldi, Claudio; Tresso, Elena; Pirri, Candido Fabrizio

2017-08-01

The recent need to benefit from electricity in every moment of daily life, particularly when the access to the electric grid is limited, is forcing the scientific and industrial community to an intensive effort towards the production of integrated energy harvesting and storage devices able to drive low power electronics. In this framework, flexibility represents a mandatory requirement to cover non-planar or bendable surfaces, more and more common in nowadays-electronic devices. To this purpose, here we present an innovative device consisting of a TiO2 nanotube-based dye sensitized solar cell and a graphene-based electrical double layer capacitor integrated in a flexible architecture. Both the units are obtained by easily scalable fabrication processes exploiting photopolymer membranes as electrolytes and metal grids as current collectors. The performance of the two units and of the integrated system are thoroughly investigated by electrochemical measurements also under different irradiation conditions. To the best of our knowledge, this work shows the highest energy conversion and storage efficiency (1.02%) ever attained under 1 Sun irradiation condition for a flexible dye-sensitized-based non-wired photocapacitor. Noteworthy, this value dramatically increases while lowering the illumination condition to 0.3 Sun, achieving a remarkable value of 1.46%, thus showing optimal performances in real operation conditions.

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Kim, Sowon; Choi, Kyung Hyun

2017-08-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al2O3) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications.

Potentialities of silicon nanowire forests for thermoelectric generation

NASA Astrophysics Data System (ADS)

Dimaggio, Elisabetta; Pennelli, Giovanni

2018-04-01

Silicon is a material with very good thermoelectric properties, with regard to Seebeck coefficient and electrical conductivity. Low thermal conductivities, and hence high thermal to electrical conversion efficiencies, can be achieved in nanostructures, which are smaller than the phonon mean free path but large enough to preserve the electrical conductivity. We demonstrate that it is possible to fabricate a leg of a thermoelectric generator based on large collections of long nanowires, placed perpendicularly to the two faces of a silicon wafer. The process exploits the metal assisted etching technique which is simple, low cost, and can be easily applied to large surfaces. Copper can be deposited by electrodeposition on both faces, so that contacts can be provided, on top of the nanowires. Thermal conductivity of silicon nanowire forests with more than 107 nanowires mm-2 have been measured; the result is comparable with that achieved by several groups on devices based on few nanowires. On the basis of the measured parameters, numerical calculations of the efficiency of silicon-based thermoelectric generators are reported, and the potentialities of these devices for thermal to electrical energy conversion are shown. Criteria to improve the conversion efficiency are suggested and described.

Even the Odd Numbers Help: Failure Modes of SAM-Based Tunnel Junctions Probed via Odd-Even Effects Revealed in Synchrotrons and Supercomputers.

PubMed

Thompson, Damien; Nijhuis, Christian A

2016-10-18

This Account describes a body of research in atomic level design, synthesis, physicochemical characterization, and macroscopic electrical testing of molecular devices made from ferrocene-functionalized alkanethiol molecules, which are molecular diodes, with the aim to identify, and resolve, the failure modes that cause leakage currents. The mismatch in size between the ferrocene headgroup and alkane rod makes waxlike highly dynamic self-assembled monolayers (SAMs) on coinage metals that show remarkable atomic-scale sensitivity in their electrical properties. Our results make clear that molecular tunnel junction devices provide an excellent testbed to probe the electronic and supramolecular structures of SAMs on inorganic substrates. Contacting these SAMs to a eutectic "EGaIn" alloy top-electrode, we designed highly stable long-lived molecular switches of the form electrode-SAM-electrode with robust rectification ratios of up to 3 orders of magnitude. The graphic that accompanies this conspectus displays a computed SAM packing structure, illustrating the lollipop shape of the molecules that gives dynamic SAM supramolecular structures and also the molecule-electrode van der Waals (vdW) contacts that must be controlled to form good SAM-based devices. In this Account, we first trace the evolution of SAM-based electronic devices and rationalize their operation using energy level diagrams. We describe the measurement of device properties using near edge X-ray absorption fine structure spectroscopy, cyclic voltammetry, and X-ray photoelectron spectroscopy complemented by molecular dynamics and electronic structure calculations together with large numbers of electrical measurements. We discuss how data obtained from these combined experimental/simulation codesign studies demonstrate control over the supramolecular and electronic structure of the devices, tuning odd-even effects to optimize inherent packing tendencies of the molecules in order to minimize leakage currents in the junctions. It is now possible, but still very costly to create atomically smooth electrodes and we discuss progress toward masking electrode imperfections using cooperative molecule-electrode contacts that are only accessible by dynamic SAM structures. Finally, the unique ability of SAM devices to achieve simultaneously high and atom-sensitive electrical switching is summarized and discussed. While putting these structures to work as real world electronic devices remains very challenging, we speculate on the scientific and technological advances that are required to further improve electronic and supramolecular structure, toward the creation of high yields of long-lived molecular devices with (very) large, reproducible rectification ratios.

Shock Prevention

NASA Technical Reports Server (NTRS)

1978-01-01

The electrician pictured is installing a General Electric Ground Fault Interrupter (GFI), a device which provides protection against electrical shock in the home or in industrial facilities. Shocks due to defective wiring in home appliances or other electrical equipment can cause severe burns, even death. As a result, the National Electrical Code now requires GFIs in all new homes constructed. This particular type of GFI employs a sensing element which derives from technology acquired in space projects by SCI Systems, Inc., Huntsville, Alabama, producer of sensors for GE and other manufacturers of GFI equipment. The sensor is based on the company's experience in developing miniaturized circuitry for space telemetry and other spacecraft electrical systems; this experience enabled SCI to package interruptor circuitry in the extremely limited space available and to produce sensory devices at practicable cost. The tiny sensor measures the strength of the electrical current and detects current differentials that indicate a fault in the functioning of an electrical system. The sensing element then triggers a signal to a disconnect mechanism in the GFI, which cuts off the current in the faulty circuit.

A loop-gap resonator for chirality-sensitive nuclear magneto-electric resonance (NMER)

NASA Astrophysics Data System (ADS)

Garbacz, Piotr; Fischer, Peer; Krämer, Steffen

2016-09-01

Direct detection of molecular chirality is practically impossible by methods of standard nuclear magnetic resonance (NMR) that is based on interactions involving magnetic-dipole and magnetic-field operators. However, theoretical studies provide a possible direct probe of chirality by exploiting an enantiomer selective additional coupling involving magnetic-dipole, magnetic-field, and electric field operators. This offers a way for direct experimental detection of chirality by nuclear magneto-electric resonance (NMER). This method uses both resonant magnetic and electric radiofrequency (RF) fields. The weakness of the chiral interaction though requires a large electric RF field and a small transverse RF magnetic field over the sample volume, which is a non-trivial constraint. In this study, we present a detailed study of the NMER concept and a possible experimental realization based on a loop-gap resonator. For this original device, the basic principle and numerical studies as well as fabrication and measurements of the frequency dependence of the scattering parameter are reported. By simulating the NMER spin dynamics for our device and taking the 19F NMER signal of enantiomer-pure 1,1,1-trifluoropropan-2-ol, we predict a chirality induced NMER signal that accounts for 1%-5% of the standard achiral NMR signal.

High dynamic range electric field sensor for electromagnetic pulse detection.

PubMed

Lin, Che-Yun; Wang, Alan X; Lee, Beom Suk; Zhang, Xingyu; Chen, Ray T

2011-08-29

We design a high dynamic range electric field sensor based on domain inverted electro-optic (E-O) polymer Y-fed directional coupler for electromagnetic wave detection. This electrode-less, all optical, wideband electrical field sensor is fabricated using standard processing for E-O polymer photonic devices. Experimental results demonstrate effective detection of electric field from 16.7V/m to 750KV/m at a frequency of 1GHz, and spurious free measurement range of 70dB.

Specificity Bio-identification of CNT-Based Transistor

NASA Astrophysics Data System (ADS)

Wang, Sheng-Yu; Wu, Hue-Min

2017-12-01

In this research, we report a simple and general approach to π-π stacking functionalization of the sidewalls of CNTs by 1-pyrenebutanoic acid, succinimidyl ester (PSE), and subsequent immobilization of insulin-like growth factor 1 receptor (IGF1R) onto SWNTs with a high degree of control and specificity. The selection of PSE provides visualization and characterization of individual CNTs based on its strong luminescence. In addition, we designed a simple and efficient electrode with a staggered pattern to increase the effect of electrophoresis by using electric field for the macroscopic alignment of CNTs to complete a field-effect device for CNT-based biosensors. Scanning Electron Microscopy (SEM) was used to investigate the morphology of the biosensors. The results of four-point probe method demonstrated high selectivity and sensitivity of detection. The functionalization of SWNTs was investigated by Fourier transform infrared spectroscopy (FTIR). Experimental results imply that specific binding between IGF1R and its specific mAb results in a dramatic change in electrical current of CNT-based devices, and suggest that the devices are very promising biosensor candidates to detect circulating cancer cells.

Electrical Characterization of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide

NASA Astrophysics Data System (ADS)

Peterson, George Glenn

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon substrates through the use of plasma enhanced chemical vapor deposition (PECVD). Many forms of structural and electrical measurements and analysis have been performed on the p-n heterojunction devices as a function of both He+ ion and neutron irradiation including: transmission electron microscopy (TEM), selected area electron diffraction (SAED), current versus voltage I(V), capacitance versus voltage C(V), conductance versus frequency G(f), and charge carrier lifetime (tau). In stark contrast to nearly all other electronic devices, the electrical performance of these p-n heterojunction diodes improved with irradiation. This is most likely the result of bond defect passivation and resolution of degraded icosahedral based carborane structures (icosahedral molecules missing a B, C, or H atom(s)).

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

Electrical device fabrication from nanotube formations

DOEpatents

Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

2013-03-12

A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dustin; Zhao, Fangchao; Tong, Kwing

Here, the extended lifetime of organic light-emitting diodes (OLEDs) based on enhanced electrical stability of a silver nanowire (AgNW) transparent conductive electrode is reported. Specifically, in depth investigation is performed on the ability of atomic layer deposition deposited zinc oxide (ZnO) on AgNWs to render the nanowires electrically stable during electrical stressing at the range of operational current density used for OLED lighting. ZnO-coated AgNWs have been observed to show no electrical, optical, or morphological degradation, while pristine AgNW electrodes have become unusable for optoelectronic devices due to dramatic decreases in conductivity, transparency, and fragmentation of the nanowire network atmore » ≈150 mA cm -2. When fabricated into OLED substrates, resulting OLEDs fabricated on the ZnO-AgNW platform exhibit a 140% increase in lifetime when compared to OLEDs fabricated on indium tin oxide (ITO)/glass, and ≈20% when compared to OLEDs fabricated on AgNW based substrates. While both ZnO-coated and pristine AgNW substrates outperform ITO/glass due to the lower current densities required to drive the device, morphological stability in response to current stressing is responsible for the enhancement of lifetime of ZnO-AgNW based OLEDs compared to pristine AgNW based OLEDs.« less

Multidimensional materials and device architectures for future hybrid energy storage

DOE PAGES

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

2016-09-07

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated ‘Internet of Things’, there are intensive efforts to develop miniature yet powerful electrical energy storage devices. Here, this review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Multidimensional materials and device architectures for future hybrid energy storage

NASA Astrophysics Data System (ADS)

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

2016-09-01

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated `Internet of Things', there are intensive efforts to develop miniature yet powerful electrical energy storage devices. This review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Multidimensional materials and device architectures for future hybrid energy storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated ‘Internet of Things’, there are intensive efforts to develop miniature yet powerful electrical energy storage devices. Here, this review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Capillary zone electrophoresis-mass spectrometer interface

DOEpatents

D`Silva, A.

1996-08-06

A device for providing equal electrical potential between two loci unconnected by solid or liquid electrical conductors is provided. The device comprises a first electrical conducting terminal, a second electrical conducting terminal connected to the first terminal by a rigid dielectric structure, and an electrically conducting gas contacting the first and second terminals. This device is particularly suitable for application in the electrospray ionization interface between a capillary zone electrophoresis apparatus and a mass spectrometer. 1 fig.

Capillary zone electrophoresis-mass spectrometer interface

DOEpatents

D'Silva, Arthur

1996-08-06

A device for providing equal electrical potential between two loci unconnected by solid or liquid electrical conducts is provided. The device comprises a first electrical conducting terminal, a second electrical conducting terminal connected to the first terminal by a rigid dielectric structure, and an electrically conducting gas contacting the first and second terminals. This device is particularly suitable for application in the electrospray ionization interface between a capillary zone electrophoresis apparatus and a mass spectrometer.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Carbon Redox-Polymer-Gel Hybrid Supercapacitors.

PubMed

Vlad, A; Singh, N; Melinte, S; Gohy, J-F; Ajayan, P M

2016-02-26

Energy storage devices that provide high specific power without compromising on specific energy are highly desirable for many electric-powered applications. Here, we demonstrate that polymer organic radical gel materials support fast bulk-redox charge storage, commensurate to surface double layer ion exchange at carbon electrodes. When integrated with a carbon-based electrical double layer capacitor, nearly ideal electrode properties such as high electrical and ionic conductivity, fast bulk redox and surface charge storage as well as excellent cycling stability are attained. Such hybrid carbon redox-polymer-gel electrodes support unprecedented discharge rate of 1,000C with 50% of the nominal capacity delivered in less than 2 seconds. Devices made with such electrodes hold the potential for battery-scale energy storage while attaining supercapacitor-like power performances.

Monitoring method and apparatus using high-frequency carrier

DOEpatents

Haynes, H.D.

1996-04-30

A method and apparatus for monitoring an electrical-motor-driven device by injecting a high frequency carrier signal onto the power line current. The method is accomplished by injecting a high frequency carrier signal onto an AC power line current. The AC power line current supplies the electrical-motor-driven device with electrical energy. As a result, electrical and mechanical characteristics of the electrical-motor-driven device modulate the high frequency carrier signal and the AC power line current. The high frequency carrier signal is then monitored, conditioned and demodulated. Finally, the modulated high frequency carrier signal is analyzed to ascertain the operating condition of the electrical-motor-driven device. 6 figs.

Liquid-level sensing device

DOEpatents

Goldfuss, G.T.

1975-09-16

This invention relates to a device for sensing the level of a liquid while preventing the deposition and accumulation of materials on the exterior surfaces thereof. Two dissimilar metal wires are enclosed within an electrical insulating material, the wires being joined together at one end to form a thermocouple junction outside the insulating material. Heating means is disposed within the electrical insulating material and maintains the device at a temperature substantially greater than that of the environment surrounding the device, the heating means being electrically insulated from the two dissimilar thermocouple wires. In addition, a metal sheath surrounds and contacts both the electrical insulating material and the thermocouple junction. Electrical connections are provided for connecting the heating means with a power source and for connecting the thermocouple wires with a device for sensing the electrical potential across the thermocouple junction. (auth)

Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

DTIC Science & Technology

2016-09-01

rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process...the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect...thin films of niobium. Simulations are made at low 1013 cm-2 and high 1014 cm-2 dose at 60 keV. At high dose, disorder induced is significantly

Driving Control for Electric Power Assisted Wheelchair Based on Regenerative Brake

NASA Astrophysics Data System (ADS)

Seki, Hirokazu; Takahashi, Kazuki; Tadakuma, Susumu

This paper describes a novel safety driving control scheme for electric power assisted wheelchairs based on the regenerative braking system. “Electric power assisted wheelchair” which assists the driving force by electric motors is expected to be widely used as a mobility support system for elderly people and disabled people, however, the safe and secure driving performance especially on downhill roads must be further improved because electric power assisted wheelchairs have no braking devices. The proposed control system automatically switches the driving mode, from “assisting mode” to “braking mode”, based on the wheelchair's velocity and the declined angle and smoothly suppresses the wheelchair's acceleration based on variable duty ratio control in order to realize the safety driving and to improve the ride quality. Some experiments on the practical roads and subjective evaluation show the effectiveness of the proposed control system.

Terahertz electrical writing speed in an antiferromagnetic memory

PubMed Central

Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

2018-01-01

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

All-electric spin modulator based on a two-dimensional topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo; Ai, Guoping; Liu, Ying

2016-01-18

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarizationmore » rotator by replacing the drain electrode with a non-magnetic material.« less

Simulations of Propane and Butane Gas Sensor Based on Pristine Armchair Graphene Nanoribbon

NASA Astrophysics Data System (ADS)

Rashid, Haroon; Koel, Ants; Rang, Toomas

2018-05-01

Over the last decade graphene and its derivatives have gained a remarkable place in research field. As silicon technology is approaching to its geometrical limits so there is a need of alternate that can replace it. Graphene has emerged as a potential candidate for future nano-electronics applications due to its exceptional and extraordinary chemical, optical, electrical and mechanical properties. Graphene based sensors have gained significance for a wide range of sensing applications like detection of biomolecules, chemicals and gas molecules. It can be easily used to make electrical contacts and manipulate them according to the requirements as compared to the other nanomaterials. The intention of the work presented in this article is to contribute in this field by simulating a novel and cheap graphene nanoribbon sensor for the household gas leakage detection. QuantumWise Atomistix (ATK) software is used for the simulations of propane and butane gas sensor. Projected device density of the states (PDDOS) and the transmission spectrum of the device in the proximity of gas molecules are calculated and discussed. The change in the electric current through the device in the presence of the gas molecules is used as a gas detection mechanism for the simulated sensor.

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

NASA Astrophysics Data System (ADS)

Schopfer, F.; Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.

Large-area and high-quality graphene devices synthesized by CVD on SiC are used to develop reliable electrical resistance standards, based on the quantum Hall effect (QHE), with state-of-the-art accuracy of 1x10-9 and under an extended range of experimental conditions of magnetic field (down to 3.5 T), temperature (up to 10 K) or current (up to 0.5 mA). These conditions are much relaxed as compared to what is required by GaAs/AlGaAs standards and will enable to broaden the use of the primary quantum electrical standards to the benefit of Science and Industry for electrical measurements. Furthermore, by comparison of these graphene devices with GaAs/AlGaAs standards, we demonstrate the universality of the QHE within an ultimate uncertainty of 8.2x10-11. This suggests the exact relation of the quantized Hall resistance with the Planck constant and the electron charge, which is crucial for the new SI to be based on fixing such fundamental constants. These results show that graphene realizes its promises and demonstrates its superiority over other materials for a demanding application. Nature Nanotech. 10, 965-971, 2015, Nature Commun. 6, 6806, 2015

Hybrid electric vehicle power management system

DOEpatents

Bissontz, Jay E.

2015-08-25

Level voltage levels/states of charge are maintained among a plurality of high voltage DC electrical storage devices/traction battery packs that are arrayed in series to support operation of a hybrid electric vehicle drive train. Each high voltage DC electrical storage device supports a high voltage power bus, to which at least one controllable load is connected, and at least a first lower voltage level electrical distribution system. The rate of power transfer from the high voltage DC electrical storage devices to the at least first lower voltage electrical distribution system is controlled by DC-DC converters.

Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.

PubMed

May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C

2018-04-24

Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes <1%, contribute to the electroluminescence (EL). Here, we show that a population of electrical shorts exists in the devices, consisting of a subset of low-resistance nanowires that pass a large portion of the total current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Current control circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2005-03-15

Among the embodiments of the present invention is an apparatus that includes a transistor (30), a servo device (40), and a current source (50). The servo device (40) is operable to provide a common base mode of operation of the transistor (30) by maintaining an approximately constant voltage level at the transistor base (32b). The current source (150) is operable to provide a bias current to the transistor (30). A first device (24) provides an input signal to an electrical node (70) positioned between the emitter (32e) of the transistor (30) and the current source (50). A second device (26) receives an output signal from the collector (32c) of the transistor (30).

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Design principles for HgTe based topological insulator devices

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

2013-07-01

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

Additives to silane for thin film silicon photovoltaic devices

DOEpatents

Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

2013-09-17

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

NASA Astrophysics Data System (ADS)

Tarsoly, Gergely; Pyo, Seungmoon

2018-06-01

We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

Multifunctional Device based on phosphor-piezoelectric PZT: lighting, speaking, and mechanical energy harvesting.

PubMed

Lee, Sunghoon; Kang, Taewook; Lee, Wunho; Afandi, Mohammad M; Ryu, Jongho; Kim, Jongsu

2018-01-10

We demonstrated the tri-functional device based on all powder-processing methods by using ZnS powder as phosphor layer and piezoelectric material as dielectric layer. The fabricated device generated the electroluminescent (EL) light from phosphor and the sound from piezoelectric sheet under a supply of external electric power, and additionally harvested the reverse-piezoelectric energy to be converted into EL light. Under sinusoidal applied voltage, EL luminances were exponentially increased with a maximum luminous efficiency of 1.3 lm/W at 40 V and 1,000 Hz, and sound pressure levels (SPLs) were linearly increased. The EL luminances were linearly dependent on applied frequency while the SPLs showed the parabolic increase behavior below 1,000 Hz and then the flat response. The temperature dependence on EL luminances and SPLs was demonstrated; the former was drastically increased and the latter was slightly decreased with the increase of temperature. Finally, as an energy harvesting application, the piezoelectric-induced electroluminescence effect was demonstrated by applying only mechanical pressure to the device without any external electric power.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Dehua; Liu, Qing; Tisdale, Jeremy

This paper reports Seebeck effects driven by both surface polarization difference and entropy difference by using intramolecular charge-transfer states in n-type and p-type conjugated polymers, namely IIDT and IIDDT, based on vertical conductor/polymer/conductor thin-film devices. Large Seebeck coefficients of -898 V/K and 1300 V/K from are observed from n-type IIDT p-type IIDDT, respectively, when the charge-transfer states are generated by a white light illumination of 100 mW/cm2. Simultaneously, electrical conductivities are increased from almost insulating states in dark condition to conducting states under photoexcitation in both n-type IIDT and p-type IIDDT devices. We find that the intramolecular charge-transfer states canmore » largely enhance Seebeck effects in the n-type IIDT and p-type IIDDT devices driven by both surface polarization difference and entropy difference. Furthermore, the Seebeck effects can be shifted between polarization and entropy regimes when electrical conductivities are changed. This reveals a new concept to develop Seebeck effects by controlling polarization and entropy regimes based on charge-transfer states in vertical conductor/polymer/conductor thin-film devices.« less

Correlation between ambient air and continuous bending stress for the electrical reliability of flexible pentacene-based thin-film transistors

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Peng, Han-Hsing; Lin, Yu-Zuo; Huang, Bohr-Ran

2015-01-01

This study investigated how continuous bending stress affects the electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) with poly(4-vinylphenol) (PVP) gate insulator in a vacuum and in ambient air. In tension mode, the strain direction of the fabricated devices was perpendicular to the device channel length. The OTFT devices that were bent in a vacuum exhibited a decreased on current because of cracking in the pentacene channel layer, which can obstruct the transport of charge carriers and deteriorate the on current of the OTFTs. The OTFT devices that were bent in ambient air exhibited a slightly decreased on current and considerably increased off current and subthreshold swing (SS). It was assumed that air moisture passed through the pentacene cracks into the interface between the PVP and pentacene layer, thereby yielding an increase in polar moisture traps, and leading to an increase in the conductivity of the pentacene, thus yielding a slightly decreased on current and considerably increased off current and SS.

High-accurate optical vector analysis based on optical single-sideband modulation

NASA Astrophysics Data System (ADS)

Xue, Min; Pan, Shilong

2016-11-01

Most of the efforts devoted to the area of optical communications were on the improvement of the optical spectral efficiency. Varies innovative optical devices are thus developed to finely manipulate the optical spectrum. Knowing the spectral responses of these devices, including the magnitude, phase and polarization responses, is of great importance for their fabrication and application. To achieve high-resolution characterization, optical vector analyzers (OVAs) based on optical single-sideband (OSSB) modulation have been proposed and developed. Benefiting from the mature and highresolution microwave technologies, the OSSB-based OVA can potentially achieve a resolution of sub-Hz. However, the accuracy is restricted by the measurement errors induced by the unwanted first-order sideband and the high-order sidebands in the OSSB signal, since electrical-to-optical conversion and optical-to-electrical conversion are essentially required to achieve high-resolution frequency sweeping and extract the magnitude and phase information in the electrical domain. Recently, great efforts have been devoted to improve the accuracy of the OSSB-based OVA. In this paper, the influence of the unwanted-sideband induced measurement errors and techniques for implementing high-accurate OSSB-based OVAs are discussed.

Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth terfenol-D structures.

PubMed

Peng, Mingzeng; Zhang, Yan; Liu, Yudong; Song, Ming; Zhai, Junyi; Wang, Zhong Lin

2014-10-22

A multi-field coupling structure is designed and investigated, which combines GaN-based optoelectronic devices and Terfenol-D. The abundant coupling effects and multifunctionalities among magnetics, mechanics, electrics, and optics are investigated by a combination of non-magnetic GaN-based piezoelectronic optoelectronic characteristics and the giant magnetomechanical properties of Terfenol-D. A few potential new areas of studies are proposed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ephemeral Electric Potential and Electric Field Sensor

NASA Technical Reports Server (NTRS)

Generazio, Edward R. (Inventor)

2017-01-01

Systems, methods, and devices of the various embodiments provide for the minimization of the effects of intrinsic and extrinsic leakage electrical currents enabling true measurements of electric potentials and electric fields. In an embodiment, an ephemeral electric potential and electric field sensor system may have at least one electric field sensor and a rotator coupled to the electric field sensor and be configured to rotate the electric field sensor at a quasi-static frequency. In an embodiment, ephemeral electric potential and electric field measurements may be taken by rotating at least one electric field sensor at a quasi-static frequency, receiving electrical potential measurements from the electric field sensor when the electric field sensor is rotating at the quasi-static frequency, and generating and outputting images based at least in part on the received electrical potential measurements.

Battery self-warming mechanism using the inverter and the battery main disconnect circuitry

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2005-04-19

An apparatus connected to an energy storage device for powering an electric motor and optionally providing a warming function for the energy storage device is disclosed. The apparatus includes a circuit connected to the electric motor and the energy storage device for generating a current. The apparatus also includes a switching device operably associated with the circuit for selectively directing the current to one of the electric motor and the energy storage device.

Electrical detection of nuclear spins in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Malissa, H.; Kavand, M.; Waters, D. P.; Lupton, J. M.; Vardeny, Z. V.; Saam, B.; Boehme, C.

2014-03-01

We present pulsed combined electrically detected electron paramagnetic and nuclear magnetic resonance experiments on MEH-PPV OLEDs. Spin dynamics in these structures are governed by hyperfine interactions between charge carriers and the surrounding hydrogen nuclei, which are abundant in these materials. Hyperfine coupling has been observed by monitoring the device current during coherent spin excitation. Electron spin echoes (ESEs) are detected by applying one additional readout pulse at the time of echo formation. This allows for the application of high-resolution spectroscopy based on ESE detection, such as electron spin echo envelope modulation (ESEEM) and electron nuclear double resonance (ENDOR) available for electrical detection schemes. We conduct electrically detected ESEEM and ENDOR experiments and show how hyperfine interactions in MEH-PPV with and without deuterated polymer side groups can be observed by device current measurements. We acknowledge support by the Department of Energy, Office of Basic Energy Sciences under Award #DE-SC0000909.

An all-electric single-molecule motor.

PubMed

Seldenthuis, Johannes S; Prins, Ferry; Thijssen, Joseph M; van der Zant, Herre S J

2010-11-23

Many types of molecular motors have been proposed and synthesized in recent years, displaying different kinds of motion, and fueled by different driving forces such as light, heat, or chemical reactions. We propose a new type of molecular motor based on electric field actuation and electric current detection of the rotational motion of a molecular dipole embedded in a three-terminal single-molecule device. The key aspect of this all-electronic design is the conjugated backbone of the molecule, which simultaneously provides the potential landscape of the rotor orientation and a real-time measure of that orientation through the modulation of the conductivity. Using quantum chemistry calculations, we show that this approach provides full control over the speed and continuity of motion, thereby combining electrical and mechanical control at the molecular level over a wide range of temperatures. Moreover, chemistry can be used to change all key parameters of the device, enabling a variety of new experiments on molecular motors.

Electrical Stimulation Technologies for Wound Healing

PubMed Central

Kloth, Luther C.

2014-01-01

Objective: To discuss the physiological bases for using exogenously applied electric field (EF) energy to enhance wound healing with conductive electrical stimulation (ES) devices. Approach: To describe the types of electrical currents that have been reported to enhance chronic wound-healing rate and closure. Results: Commercial ES devices that generate direct current (DC), and mono and biphasic pulsed current waveforms represent the principal ES technologies which are reported to enhance wound healing. Innovation: Wafer-thin, disposable ES technologies (wound dressings) that utilize mini or micro-batteries to deliver low-level DC for wound healing and antibacterial wound-treatment purposes are commercially available. Microfluidic wound-healing chips are currently being used with greater accuracy to investigate the EF effects on cellular electrotaxis. Conclusion: Numerous clinical trials described in subsequent sections of this issue have demonstrated that ES used adjunctively with standard wound care (SWC), enhances wound healing rate faster than SWC alone. PMID:24761348

Tunnel junctions with multiferroic barriers

NASA Astrophysics Data System (ADS)

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Tunnel junctions with multiferroic barriers.

PubMed

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La(0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

21 CFR 890.3110 - Electric positioning chair.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Electric positioning chair. 890.3110 Section 890.3110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Prosthetic Devices § 890.3110 Electric...

21 CFR 890.3110 - Electric positioning chair.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Electric positioning chair. 890.3110 Section 890.3110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Prosthetic Devices § 890.3110 Electric...

21 CFR 890.3110 - Electric positioning chair.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Electric positioning chair. 890.3110 Section 890.3110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Prosthetic Devices § 890.3110 Electric...

21 CFR 890.3110 - Electric positioning chair.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Electric positioning chair. 890.3110 Section 890.3110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Prosthetic Devices § 890.3110 Electric...

21 CFR 890.3110 - Electric positioning chair.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electric positioning chair. 890.3110 Section 890.3110 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Prosthetic Devices § 890.3110 Electric...

Effect of contact barrier on electron transport in graphene.

PubMed

Zhou, Yang-Bo; Han, Bing-Hong; Liao, Zhi-Min; Zhao, Qing; Xu, Jun; Yu, Da-Peng

2010-01-14

The influence of the barrier between metal electrodes and graphene on the electrical properties was studied on a two-electrode device. A classical barrier model was used to analyze the current-voltage characteristics. Primary parameters including barrier height and effective resistance were achieved. The electron transport properties under magnetic field were further investigated. An abnormal peak-valley-peak shape of voltage-magnetoresistance curve was observed. The underlying mechanisms were discussed under the consideration of the important influence of the contact barrier. Our results indicate electrical properties of graphene based devices are sensitive to the contact interface.

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Benzocyclobutene-based electric micromachines supported on microball bearings: Design, fabrication, and characterization

NASA Astrophysics Data System (ADS)

Modafe, Alireza

This dissertation summarizes the research activities that led to the development of the first microball-bearing-supported linear electrostatic micromotor with benzocyclobutene (BCB) low-k polymer insulating layers. The primary application of this device is long-range, high-speed linear micropositioning. The future generations of this device include rotary electrostatic micromotors and microgenerators. The development of the first generation of microball-bearing-supported micromachines, including device theory, design, and modeling, material characterization, process development, device fabrication, and device test and characterization is presented. The first generation of these devices is based on a 6-phase, bottom-drive, linear, variable-capacitance micromotor (B-LVCM). The design of the electrical and mechanical components of the micromotor, lumped-circuit modeling of the device and electromechanical characteristics, including variable capacitance, force, power, and speed are presented. Electrical characterization of BCB polymers, characterization of BCB chemical mechanical planarization (CMP), development of embedded BCB in silicon (EBiS) process, and integration of device components using microfabrication techniques are also presented. The micromotor consists of a silicon stator, a silicon slider, and four stainless-steel microballs. The aligning force profile of the micromotor was extracted from simulated and measured capacitances of all phases. An average total aligning force of 0.27 mN with a maximum of 0.41 mN, assuming a 100 V peak-to-peak square-wave voltage, was measured. The operation of the micromotor was verified by applying square-wave voltages and characterizing the slider motion. An average slider speed of 7.32 mm/s when excited by a 40 Hz, 120 V square-wave voltage was reached without losing the synchronization. This research has a pivotal impact in the field of power microelectromechanical systems (MEMS). It establishes the foundation for the development of more reliable, efficient electrostatic micromachines with variety of applications such as micropropulsion, high-speed micropumping, microfluid delivery, and microsystem power generation.

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj

2016-09-05

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route ofmore » high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.« less

Characterization of the Hole Transport and Electrical Properties in the Small-Molecule Organic Semiconductors

NASA Astrophysics Data System (ADS)

Wang, L. G.; Zhu, J. J.; Liu, X. L.; Cheng, L. F.

2017-10-01

In this paper, we investigate the hole transport and electrical properties in a small-molecule organic material N, N'-bis(1-naphthyl)- N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB), which is frequently used in organic light-emitting diodes. It is shown that the thickness-dependent current density versus voltage ( J- V) characteristics of sandwich-type NPB-based hole-only devices cannot be described well using the conventional mobility model without carrier density or electric field dependence. However, a consistent and excellent description of the thickness-dependent and temperature-dependent J- V characteristics of NPB hole-only devices can be obtained with a single set of parameters by using our recently introduced improved model that take into account the temperature, carrier density, and electric field dependence of the mobility. For the small-molecule organic semiconductor studied, we find that the width of the Gaussian distribution of density of states σ and the lattice constant a are similar to the values reported for conjugated polymers. Furthermore, we show that the boundary carrier density has an important effect on the J- V characteristics. Both the maximum of carrier density and the minimum of electric field appear near the interface of NPB hole-only devices.

40 CFR 424.20 - Applicability; description of the covered electric furnaces and other smelting operations with...

Code of Federal Regulations, 2011 CFR

2011-07-01

... covered electric furnaces and other smelting operations with wet air pollution control devices subcategory... Smelting Operations With Wet Air Pollution Control Devices Subcategory § 424.20 Applicability; description of the covered electric furnaces and other smelting operations with wet air pollution control devices...

40 CFR 424.20 - Applicability; description of the covered electric furnaces and other smelting operations with...

Code of Federal Regulations, 2010 CFR

2010-07-01

... covered electric furnaces and other smelting operations with wet air pollution control devices subcategory... Smelting Operations With Wet Air Pollution Control Devices Subcategory § 424.20 Applicability; description of the covered electric furnaces and other smelting operations with wet air pollution control devices...

40 CFR 424.20 - Applicability; description of the covered electric furnaces and other smelting operations with...

Code of Federal Regulations, 2012 CFR

2012-07-01

... covered electric furnaces and other smelting operations with wet air pollution control devices subcategory... Smelting Operations With Wet Air Pollution Control Devices Subcategory § 424.20 Applicability; description of the covered electric furnaces and other smelting operations with wet air pollution control devices...

40 CFR 424.20 - Applicability; description of the covered electric furnaces and other smelting operations with...

Code of Federal Regulations, 2013 CFR

2013-07-01

... covered electric furnaces and other smelting operations with wet air pollution control devices subcategory... Smelting Operations With Wet Air Pollution Control Devices Subcategory § 424.20 Applicability; description of the covered electric furnaces and other smelting operations with wet air pollution control devices...

40 CFR 424.20 - Applicability; description of the covered electric furnaces and other smelting operations with...

Code of Federal Regulations, 2014 CFR

2014-07-01

... covered electric furnaces and other smelting operations with wet air pollution control devices subcategory... Smelting Operations With Wet Air Pollution Control Devices Subcategory § 424.20 Applicability; description of the covered electric furnaces and other smelting operations with wet air pollution control devices...

Low-Voltage Paper Isotachophoresis Device for DNA Focusing

PubMed Central

Li, Xiang; Luo, Long; Crooks, Richard M.

2015-01-01

We present a new paper-based isotachophoresis (ITP) device design for focusing DNA samples having lengths ranging from 23 to at least 1517 bp. DNA is concentrated by more than two orders of magnitude within 4 min. The key component of this device is a 2 mm-long, 2 mm-wide circular paper channel formed by concertina folding a paper strip and aligning the circular paper zones on each layer. Due to the short channel length, a high electric field of ~16 kV/m is easily generated in the paper channel using two 9 V batteries. The multilayer architecture also enables convenient reclamation and analysis of the sample after ITP focusing by simply opening the origami paper and cutting out the desired layers. We profiled the electric field in the origami paper channel during ITP experiments using a nonfocusing fluorescent tracer. The result showed that focusing relies on formation and subsequent movement of a sharp electric field boundary between the leading and trailing electrolyte. PMID:26338530

Temperature-Dependent Electric Field Poling Effects in CH3NH3PbI3 Optoelectronic Devices.

PubMed

Zhang, Chuang; Sun, Dali; Liu, Xiaojie; Sheng, Chuan-Xiang; Vardeny, Zeev Valy

2017-04-06

Organo-lead halide perovskites show excellent optoelectronic properties; however, the unexpected inconsistency in forward-backward I-V characteristics remains a problem for fabricating solar panels. Here we have investigated the reasons behind this "hysteresis" by following the changes in photocurrent and photoluminescence under electric field poling in transverse CH 3 NH 3 PbI 3 -based devices from 300 to 10 K. We found that the hysteresis disappears at cryogenic temperatures, indicating the "freeze-out" of the ionic diffusion contribution. When the same device is cooled under continuous poling, the built-in electric field from ion accumulation brings significant photovoltaic effect even at 10 K. From the change of photoluminescence upon polling, we found a second dipole-related mechanism which enhances radiative recombination upon the alignment of the organic cations. The ionic origin of hysteresis was also verified by applying a magnetic field to affect the ion diffusion. These findings reveal the coexistence of ionic and dipole-related mechanisms for the hysteresis in hybrid perovskites.

Crystal growth and materials research in photovoltaics: progress and challenges

NASA Astrophysics Data System (ADS)

Surek, Thomas

2005-02-01

Photovoltaics (PV) is solar electric power—a semiconductor-based technology that converts sunlight to electricity. Three decades of research has led to the discovery of new materials and devices and new processing techniques for low-cost manufacturing. This has resulted in improved sunlight-to-electricity conversion efficiencies, improved outdoor reliability, and lower module and system costs. The manufacture and sale of PV has grown into a $5 billion industry worldwide, with more than 740 megawatts of PV modules shipped in 2003. This paper reviews the significant progress that has occurred in PV materials and devices research over the past 30 years, focusing on the advances in crystal growth and materials research, and examines the challenges to reaching the ultimate potential of current-generation (crystalline silicon), next-generation (thin films and concentrators), and future-generation PV technologies. The latter includes innovative materials and device concepts that hold the promise of significantly higher conversion efficiencies and/or much lower costs.

Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

NASA Astrophysics Data System (ADS)

Padilla, J. L.; Medina-Bailon, C.; Alper, C.; Gamiz, F.; Ionescu, A. M.

2018-04-01

Electron-Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band tunneling processes between two layers of opposite charge carriers where tunneling directions and gate-induced electric fields are mostly aligned (so-called line tunneling). However, the presence of intense electric fields associated with the band bending required to trigger interband tunneling, along with strong confinement effects, has made these types of devices to be regarded as theoretically appealing but technologically impracticable. In this work, we propose an InAs/GaSb heterostructure configuration that, although challenging in terms of process flow design and fabrication, could be envisaged for alleviating the electric fields inside the channel, whereas, at the same time, making quantum confinement become the mechanism that closes the broken gap allowing the device to switch between OFF and ON states. The utilization of induced doping prevents the harmful effect of band tails on the device performance. Simulation results lead to extremely steep slope characteristics endorsing its potential interest for ultralow power applications.

Study on light and thermal energy of illumination device for plant factory design

NASA Astrophysics Data System (ADS)

Yoshida, A.; Moriuchi, K.; Ueda, Y.; Kinoshita, S.

2018-01-01

To investigate the effect of illumination devices on the yield of crops cultivated in a plant factory, it is necessary to measure the actual cultivation environmental factors related to the plant growth and understand the distribution ratio of light and thermal energy to the electrical energy injected into the illumination device. Based on cultivation results, we found that light intensity greatly affected the growth of plant weight. Regarding the selection of illumination device, its spectral components also affected the morphological change. Lighting experiments using a high frequency (Hf) fluorescent lamp and a light emitting diode (LED) bulb were performed. A certain difference was found in the distribution ratio of light energy to electrical energy between Hf and LED. It was showed that by placing the safety equipment or internal circuits outside the cultivated site, the air conditioning load could be reduced.

Mechanical-magnetic-electric coupled behaviors for stress-driven Terfenol-D energy harvester

NASA Astrophysics Data System (ADS)

Cao, Shuying; Zheng, Jiaju; Wang, Bowen; Pan, Ruzheng; Zhao, Ran; Weng, Ling; Sun, Ying; Liu, Chengcheng

2017-05-01

The stress-driven Terfernol-D energy harvester exhibits the nonlinear mechanical-magnetic-electric coupled (MMEC) behaviors and the eddy current effects. To analyze and design the device, it is necessary to establish an accurate model of the device. Based on the effective magnetic field expression, the constitutive equations with eddy currents and variable coefficients, and the dynamic equations, a nonlinear dynamic MMEC model for the device is founded. Comparisons between the measured and calculated results show that the model can describe the nonlinear coupled curves of magnetization versus stress and strain versus stress under different bias fields, and can provide the reasonable data trends of piezomagnetic coefficients, Young's modulus and relative permeability for Terfenol-D. Moreover, the calculated power results show that the model can determine the optimal bias conditions, optimal resistance, suitable proof mass, suitable slices for the maximum energy extraction of the device under broad stress amplitude and broad frequency.

Quantum efficiency as a device-physics interpretation tool for thin-film solar cells

NASA Astrophysics Data System (ADS)

Nagle, Timothy J.

2007-12-01

Thin-film solar cells made from CdTe and CIGS p-type absorbers are promising candidates for generating pollution-free electricity. The challenge faced by the thin-film photovoltaics (PV) community is to improve the electrical properties of devices, without straying from low-cost, industry-friendly techniques. This dissertation will focus on the use of quantum-efficiency (QE) measurements to deduce the device physics of thin-film devices, in the hope of improving electrical properties and efficiencies of PV materials. Photons which are absorbed, but not converted into electrical energy can modify the energy bands in the solar cell. Under illumination, photoconductivity in the CdS window layer can result in bands different from those in the dark. QE data presented here was taken under a variety of light-bias conditions. These results suggest that 0.10 sun of white-light bias incident on the CdS layer is usually sufficient to achieve accurate QE results. QE results are described by models based on carrier collection by drift and diffusion, and photon absorption. These models are sensitive to parameters such as carrier mobility and lifetime. Comparing calculated QE curves with experiments, it was determined that electron lifetimes in CdTe are less than 0.1 ns. Lifetime determinations also suggest that copper serves as a recombination center in CdTe. The spatial uniformity of QE results has been investigated with the LBIC apparatus, and several experiments are described which investigate cell uniformity. Electrical variations that occur in solar cells often occur in a nonuniform fashion, and can be detected with the LBIC apparatus. Studies discussed here include investigation of patterned deposition of Cu in back-contacts, the use of high-resistivity TCO layers to mitigate nonuniformity, optical effects, and local shunts. CdTe devices with transparent back contacts were also studied with LBIC, including those that received a strong bromine/dichrol/hydrazine (BDH) etch and those that received a weak bromine etch at the back contact. Back-side results showed improved uniformity in BDH-etched devices, attributed to better back contacts in these devices. In thin-absorber devices, the uniformity trend would likely extend to front-side measurements.

Electroenhanced Antimicrobial Coating Based on Conjugated Polymers with Covalently Coupled Silver Nanoparticles Prevents Staphylococcus aureus Biofilm Formation.

PubMed

Gomez-Carretero, Salvador; Nybom, Rolf; Richter-Dahlfors, Agneta

2017-10-01

The incidence of hospital-acquired infections is to a large extent due to device-associated infections. Bacterial attachment and biofilm formation on surfaces of medical devices often act as seeding points of infection. To prevent such infections, coatings based on silver nanoparticles (AgNPs) are often applied, however with varying clinical success. Here, the traditional AgNP-based antibacterial technology is reimagined, now forming the base for an electroenhanced antimicrobial coating. To integrate AgNPs in an electrically conducting polymer layer, a simple, yet effective chemical strategy based on poly(hydroxymethyl 3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT-MeOH:PSS) and (3-aminopropyl)triethoxysilane is designed. The resultant PEDOT-MeOH:PSS-AgNP composite presents a consistent coating of covalently linked AgNPs, as shown by scanning electron microscopy and surface plasmon resonance analysis. The efficacy of the coatings, with and without electrical addressing, is then tested against Staphylococcus aureus, a major colonizer of medical implants. Using custom-designed culturing devices, a nearly complete prevention of biofilm growth is obtained in AgNP composite devices addressed with a square wave voltage input. It is concluded that this electroenhancement of the bactericidal effect of the coupled AgNPs offers a novel, efficient solution against biofilm colonization of medical implants. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable charge transfer properties in metal-phthalocyanine heterojunctions.

PubMed

Siles, P F; Hahn, T; Salvan, G; Knupfer, M; Zhu, F; Zahn, D R T; Schmidt, O G

2016-04-28

Organic materials such as phthalocyanine-based systems present a great potential for organic device applications due to the possibility of integrating films of different organic materials to create organic heterostructures which combine the electrical capabilities of each material. This opens the possibility to precisely engineer and tune new electrical properties. In particular, similar transition metal phthalocyanines demonstrate hybridization and charge transfer properties which could lead to interesting physical phenomena. Although, when considering device dimensions, a better understanding and control of the tuning of the transport properties still remain in the focus of research. Here, by employing conductive atomic force microscopy techniques, we provide an insight about the nanoscale electrical properties and transport mechanisms of MnPc and fluorinated phthalocyanines such as F16CuPc and F16CoPc. We report a transition from typical diode-like transport mechanisms for pure MnPc thin films to space-charge-limited current transport regime (SCLC) for Pc-based heterostructures. The controlled addition of fluorinated phthalocyanine also provides highly uniform and symmetric-polarized transport characteristics with conductance enhancements up to two orders of magnitude depending on the polarization. We present a method to spatially map the mobility of the MnPc/F16CuPc structures with a nanoscale resolution and provide theoretical calculations to support our experimental findings. This well-controlled nanoscale tuning of the electrical properties for metal transition phthalocyanine junctions stands as key step for future phthalocyanine-based electronic devices, where the low dimension charge transfer, mediated by transition metal atoms could be intrinsically linked to a transfer of magnetic moment or spin.

Surface patterning of multilayer graphene by ultraviolet laser irradiation in biomolecule sensing devices

NASA Astrophysics Data System (ADS)

Chang, Tien-Li; Chen, Zhao-Chi

2015-12-01

The study presents a direct process for surface patterning of multilayer graphene on the glass substrate as a biosensing device. In contrast to lithography with etching, the proposed process provides simultaneous surface patterning of multilayer graphene through nanosecond laser irradiation. In this study, the multilayer graphene was prepared by a screen printing process. Additionally, the wavelength of the laser beam was 355 nm. To perform the effective laser process with the small heat affected zone, the surface patterns on the sensing devices could be directly fabricated using the laser with optimal control of the pulse overlap at a fluence threshold of 0.63 J/cm2. The unique patterning of the laser-ablated surface exhibits their electrical and hydrophilic characteristics. The hydrophilic surface of graphene-based sensing devices was achieved in the process with the pulse overlap of 90%. Furthermore, the sensing devices for controlling the electrical response of glucose by using glucose oxidase can be used in sensors in commercial medical applications.

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

Supramolecular core-shell nanoparticles for photoconductive device applications

NASA Astrophysics Data System (ADS)

Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

2016-08-01

We report a breakthrough discovery involving supramolecular-based strategies to construct novel core-shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices.

21 CFR 880.2460 - Electrically powered spinal fluid pressure monitor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electrically powered spinal fluid pressure monitor... Personal Use Monitoring Devices § 880.2460 Electrically powered spinal fluid pressure monitor. (a) Identification. An electrically powered spinal fluid pressure monitor is an electrically powered device used to...

21 CFR 882.5890 - Transcutaneous electrical nerve stimulator for pain relief.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Transcutaneous electrical nerve stimulator for... Devices § 882.5890 Transcutaneous electrical nerve stimulator for pain relief. (a) Identification. A transcutaneous electrical nerve stimulator for pain relief is a device used to apply an electrical current to...

21 CFR 882.5890 - Transcutaneous electrical nerve stimulator for pain relief.

Code of Federal Regulations, 2011 CFR

2011-04-01

... Devices § 882.5890 Transcutaneous electrical nerve stimulator for pain relief. (a) Identification. A transcutaneous electrical nerve stimulator for pain relief is a device used to apply an electrical current to... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Transcutaneous electrical nerve stimulator for...

21 CFR 882.5890 - Transcutaneous electrical nerve stimulator for pain relief.

Code of Federal Regulations, 2014 CFR

2014-04-01

... Devices § 882.5890 Transcutaneous electrical nerve stimulator for pain relief. (a) Identification. A transcutaneous electrical nerve stimulator for pain relief is a device used to apply an electrical current to... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Transcutaneous electrical nerve stimulator for...

21 CFR 882.5890 - Transcutaneous electrical nerve stimulator for pain relief.

Code of Federal Regulations, 2013 CFR

2013-04-01

... Devices § 882.5890 Transcutaneous electrical nerve stimulator for pain relief. (a) Identification. A transcutaneous electrical nerve stimulator for pain relief is a device used to apply an electrical current to... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Transcutaneous electrical nerve stimulator for...

21 CFR 882.5890 - Transcutaneous electrical nerve stimulator for pain relief.

Code of Federal Regulations, 2012 CFR

2012-04-01

... Devices § 882.5890 Transcutaneous electrical nerve stimulator for pain relief. (a) Identification. A transcutaneous electrical nerve stimulator for pain relief is a device used to apply an electrical current to... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Transcutaneous electrical nerve stimulator for...

21 CFR 876.5310 - Nonimplanted, peripheral electrical continence device.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonimplanted, peripheral electrical continence device. 876.5310 Section 876.5310 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GASTROENTEROLOGY-UROLOGY DEVICES Therapeutic Devices § 876...

21 CFR 876.5310 - Nonimplanted, peripheral electrical continence device.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Nonimplanted, peripheral electrical continence device. 876.5310 Section 876.5310 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GASTROENTEROLOGY-UROLOGY DEVICES Therapeutic Devices § 876...

Comparative effectiveness of the SNaP™ Wound Care System.

PubMed

Hutton, David W; Sheehan, Peter

2011-04-01

Diabetic lower extremity wounds cause substantial burden to healthcare systems, costing tens of thousands of dollars per episode. Negative pressure wound therapy (NPWT) devices have been shown to be cost-effective at treating these wounds, but the traditional devices use bulky electrical pumps that require a durable medical equipment rental-based procurement process. The Spiracur SNaP™ Wound Care System is an ultraportable NPWT system that does not use an electric pump and is fully disposable. It has superior healing compared to standard of care with modern dressings and comparable healing to traditional NPWT devices while giving patients greater mobility and giving clinicians a simpler procurement process. We used a mathematical model to analyse the costs of the SNaP™ system and compare them to standard of care and electrically powered NPWT devices. When compared to standard of care, the SNaP™ system saves over $9000 per wound treated and more than doubles the number of patients healed. The SNaP system has similar healing time to powered NPWT devices, but saves $2300 in Medicare payments or $2800 for private payers per wound treated. Our analysis shows that the SNaP™ system could save substantial treatment costs in addition to allowing patients greater freedom and mobility. © 2011 The Authors. © 2011 Blackwell Publishing Ltd and Medicalhelplines.com Inc.

Engineering highly organized and aligned single walled carbon nanotube networks for electronic device applications: Interconnects, chemical sensor, and optoelectronics

NASA Astrophysics Data System (ADS)

Kim, Young Lae

For 20 years, single walled carbon nanotubes (SWNTs) have been studied actively due to their unique one-dimensional nanostructure and superior electrical, thermal, and mechanical properties. For these reasons, they offer the potential to serve as building blocks for future electronic devices such as field effect transistors (FETs), electromechanical devices, and various sensors. In order to realize these applications, it is crucial to develop a simple, scalable, and reliable nanomanufacturing process that controllably places aligned SWNTs in desired locations, orientations, and dimensions. Also electronic properties (semiconducting/metallic) of SWNTs and their organized networks must be controlled for the desired performance of devices and systems. These fundamental challenges are significantly limiting the use of SWNTs for future electronic device applications. Here, we demonstrate a strategy to fabricate highly controlled micro/nanoscale SWNT network structures and present the related assembly mechanism to engineer the SWNT network topology and its electrical transport properties. A method designed to evaluate the electrical reliability of such nano- and microscale SWNT networks is also presented. Moreover, we develop and investigate a robust SWNT based multifunctional selective chemical sensor and a range of multifunctional optoelectronic switches, photo-transistors, optoelectronic logic gates and complex optoelectronic digital circuits.

Enhancement of Seebeck coefficient in graphene superlattices by electron filtering technique

NASA Astrophysics Data System (ADS)

Mishra, Shakti Kumar; Kumar, Amar; Kaushik, Chetan Prakash; Dikshit, Biswaranjan

2018-01-01

We show theoretically that the Seebeck coefficient and the thermoelectric figure of merit can be increased by using electron filtering technique in graphene superlattice based thermoelectric devices. The average Seebeck coefficient for graphene-based thermoelectric devices is proportional to the integral of the distribution of Seebeck coefficient versus energy of electrons. The low energy electrons in the distribution curve are found to reduce the average Seebeck coefficient as their contribution is negative. We show that, with electron energy filtering technique using multiple graphene superlattice heterostructures, the low energy electrons can be filtered out and the Seebeck coefficient can be increased. The multiple graphene superlattice heterostructures can be formed by graphene superlattices with different periodic electric potentials applied above the superlattice. The overall electronic band gap of the multiple heterostructures is dependent upon the individual band gap of the graphene superlattices and can be tuned by varying the periodic electric potentials. The overall electronic band gap of the multiple heterostructures has to be properly chosen such that, the low energy electrons which cause negative Seebeck distribution in single graphene superlattice thermoelectric devices fall within the overall band gap formed by the multiple heterostructures. Although the electrical conductance is decreased in this technique reducing the thermoelectric figure of merit, the overall figure of merit is increased due to huge increase in Seebeck coefficient and its square dependency upon the Seebeck coefficient. This is an easy technique to make graphene superlattice based thermoelectric devices more efficient and has the potential to significantly improve the technology of energy harvesting and sensors.

Catalytic devices

DOEpatents

Liu, Ming; Zhang, Xiang

2018-01-23

This disclosure provides systems, methods, and apparatus related to catalytic devices. In one aspect, a device includes a substrate, an electrically insulating layer disposed on the substrate, a layer of material disposed on the electrically insulating layer, and a catalyst disposed on the layer of material. The substrate comprises an electrically conductive material. The substrate and the layer of material are electrically coupled to one another and configured to have a voltage applied across them.

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

PubMed Central

Dehzangi, Arash; Abedini, Alam; Abdullah, Ahmad Makarimi; Saion, Elias; Hutagalung, Sabar D; Hamidon, Mohd N; Hassan, Jumiah

2012-01-01

Summary A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current. PMID:23365794

Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

NASA Astrophysics Data System (ADS)

Paik, Young Hun

As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.

A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization.

PubMed

Berger, Andrew J; Page, Michael R; Jacob, Jan; Young, Justin R; Lewis, Jim; Wenzel, Lothar; Bhallamudi, Vidya P; Johnston-Halperin, Ezekiel; Pelekhov, Denis V; Hammel, P Chris

2014-12-01

Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

Electroluminescence and transport properties in amorphous silicon nanostructures

NASA Astrophysics Data System (ADS)

Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco

2006-03-01

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berger, Andrew J., E-mail: berger.156@osu.edu; Page, Michael R.; Young, Justin R.

Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform themore » various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.« less

Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Y. F.; Yu, Q.; Li, P.; Fung, S.

2011-12-01

The resistive switching device based on a Ni-rich nickel oxide thin film exhibits an inherent learning ability of a neural network. The device has the short-term-memory and long-term-memory functions analogous to those of the human brain, depending on the history of its experience of voltage pulsing or sweeping. Neuroplasticity could be realized with the device, as the device can be switched from a high-resistance state to a low-resistance state due to the formation of stable filaments by a series of electrical pulses, resembling the changes such as the growth of new connections and the creation of new neurons in the brain in response to experience.

Football APP based on smart phone with FES in drop foot rehabilitation.

PubMed

Ciou, Shih-Hsiang; Hwang, Yuh-Shyan; Chen, Chih-Chen; Luh, Jer-Junn; Chen, Shih-Ching; Chen, Yu-Luen

2017-01-01

Long-term, sustained progress is necessary in drop foot rehabilitation. The necessary inconvenient body training movements, the return trips to the hospital and repetitive boring training using functional electrical stimulation (FES) often results in the patient suspending their training. The patient's drop foot rehabilitation will not progress if training is suspended. A fast spread, highly portable drop foot rehabilitation training device based on the smart phone is presented. This device is combined with a self-made football APP and feedback controlled FES. The drop foot patient can easily engage in long term rehabilitation training that is more convenient and interesting. An interactive game is established on the smart phone with the Android system using the originally built-in wireless communications. The ankle angle information is detected by an external portable device as the game input signal. The electrical stimulation command to the external device is supplemented with FES stimulation for inadequate ankle efforts. After six-weeks training using six cases, the results indicated that this training device showed significant performance improvement (p< 0.05) in the patient's ankle dorsiflexion strength, ankle dorsiflexion angle, control timing and Timed Up and Go. Preliminary results show that this training device provides significant positive help to drop foot patients. Moreover, this device is based on existing and universally popular mobile processing, which can be rapidly promoted. The responses of clinical cases also show this system is easy to operate, convenient and entertaining. All of these features can improve the patient's willingness to engage in long term rehabilitation.

Nanocellulose as Material Building Block for Energy and Flexible Electronics

NASA Astrophysics Data System (ADS)

Hu, Liangbing

2014-03-01

In this talk, I will discuss the fabrications, properties and device applications of functional nanostructured paper based on nanocellulose. Nanostructures with tunable optical, electrical, ionic and mechanical properties will be discussed. Lab-scale demonstration devices, including low-cost Na-ion batteries, microbial fuel cells, solar cells, transparent transistors, actuators and touch screens will be briefly mentioned. These studies show that nanocellulose is a promising green material for electronics and energy devices.

Conductive bridging random access memory—materials, devices and applications

NASA Astrophysics Data System (ADS)

Kozicki, Michael N.; Barnaby, Hugh J.

2016-11-01

We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Electric-field enhanced performance in catalysis and solid-state devices involving gases

DOEpatents

Blackburn, Bryan M.; Wachsman, Eric D.; Van Assche, IV, Frederick Martin

2015-05-19

Electrode configurations for electric-field enhanced performance in catalysis and solid-state devices involving gases are provided. According to an embodiment, electric-field electrodes can be incorporated in devices such as gas sensors and fuel cells to shape an electric field provided with respect to sensing electrodes for the gas sensors and surfaces of the fuel cells. The shaped electric fields can alter surface dynamics, system thermodynamics, reaction kinetics, and adsorption/desorption processes. In one embodiment, ring-shaped electric-field electrodes can be provided around sensing electrodes of a planar gas sensor.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

PubMed

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles

NASA Astrophysics Data System (ADS)

Paik, Young Hun; Shokri Kojori, Hossein; Kim, Sung Jin

2016-02-01

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Carbon Redox-Polymer-Gel Hybrid Supercapacitors

PubMed Central

Vlad, A.; Singh, N.; Melinte, S.; Gohy, J.-F.; Ajayan, P.M.

2016-01-01

Energy storage devices that provide high specific power without compromising on specific energy are highly desirable for many electric-powered applications. Here, we demonstrate that polymer organic radical gel materials support fast bulk-redox charge storage, commensurate to surface double layer ion exchange at carbon electrodes. When integrated with a carbon-based electrical double layer capacitor, nearly ideal electrode properties such as high electrical and ionic conductivity, fast bulk redox and surface charge storage as well as excellent cycling stability are attained. Such hybrid carbon redox-polymer-gel electrodes support unprecedented discharge rate of 1,000C with 50% of the nominal capacity delivered in less than 2 seconds. Devices made with such electrodes hold the potential for battery-scale energy storage while attaining supercapacitor-like power performances. PMID:26917470

Integrating Desalination and Energy Storage using a Saltwater-based Hybrid Sodium-ion Supercapacitor.

PubMed

Guo, Zhaowei; Ma, Yuanyuan; Dong, Xiaoli; Hou, Mengyan; Wang, Yonggang; Xia, Yongyao

2018-06-11

Ever-increasing freshwater scarcity and energy crisis problems require efficient seawater desalination and energy storage technologies; however, each target is generally considered separately. Herein, a hybrid sodium-ion supercapacitor, involving a carbon-coated nano-NaTi 2 (PO 4 ) 3 -based battery anode and an activated-carbon-based capacitive cathode, is developed to combine desalination and energy storage in one device. On charge, the supercapacitor removes salt in a flowing saltwater electrolyte through Cl - electrochemical adsorption at the cathode and Na + intercalation at the anode. Discharge delivers useful electric energy and regenerates the electrodes. This supercapacitor can be used not only for energy storage with promising electrochemical performance (i.e., high power, high efficiency, and long cycle life), but also as a desalination device with desalination capacity of 146.8 mg g -1 , much higher than most reported capacitive and battery desalination devices. Finally, we demonstrate renewables to usable electric energy and desalted water through combining commercial photovoltaics and this hybrid supercapacitor. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advances in Carbon Nanotubes-Hydrogel Hybrids in Nanomedicine for Therapeutics.

PubMed

Vashist, Arti; Kaushik, Ajeet; Vashist, Atul; Sagar, Vidya; Ghosal, Anujit; Gupta, Y K; Ahmad, Sharif; Nair, Madhavan

2018-05-01

In spite of significant advancement in hydrogel technology, low mechanical strength and lack of electrical conductivity have limited their next-level biomedical applications for skeletal muscles, cardiac and neural cells. Host-guest chemistry based hybrid nanocomposites systems have gained attention as they completely overcome these pitfalls and generate bioscaffolds with tunable electrical and mechanical characteristics. In recent years, carbon nanotube (CNT)-based hybrid hydrogels have emerged as innovative candidates with diverse applications in regenerative medicines, tissue engineering, drug delivery devices, implantable devices, biosensing, and biorobotics. This article is an attempt to recapitulate the advancement in synthesis and characterization of hybrid hydrogels and provide deep insights toward their functioning and success as biomedical devices. The improved comparative performance and biocompatibility of CNT-hydrogels hybrids systems developed for targeted biomedical applications are addressed here. Recent updates toward diverse applications and limitations of CNT hybrid hydrogels is the strength of the review. This will provide a holistic approach toward understanding of CNT-based hydrogels and their applications in nanotheranostics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Use of an App-Controlled Neuromuscular Electrical Stimulation System for Improved Self-Management of Knee Conditions and Reduced Costs.

PubMed

Chughtai, Morad; Piuzzi, Nicholas; Yakubek, George; Khlopas, Anton; Sodhi, Nipun; Sultan, Assem A; Nasir, Salahuddin; Yates, Benjamin S T; Bhave, Anil; Mont, Michael A

2017-10-12

Patients suffering from quadriceps muscle weakness secondary to osteoarthritis or after surgeries, such as total knee arthroplasty, appear to benefit from the use of neuromuscular electrical stimulation (NMES), which can improve muscle strength and function, range of motion, exercise capacity, and quality of life. Several modalities exist that deliver this therapy. However, with the ever-increasing demand to improve clinical efficiency and costs, digitalize healthcare, optimize data collection, improve care coordination, and increase patient compliance and engagement, newer devices incorporating technologies that facilitate these demands are emerging. One of these devices, an app-controlled home-based NMES therapy system that allows patients to self-manage their condition and potentially increase adherence to the treatment, incorporates a smartphone-based application which allows a cloud-based portal that feeds real-time patient monitoring to physicians, allowing patients to be supported remotely and given feedback. This device is a step forward in improving both patient care and physician efficiency, as well as decreasing resource utilization, which potentially may reduce healthcare costs.

Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

PubMed

Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

2011-05-01

Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

21 CFR 880.2460 - Electrically powered spinal fluid pressure monitor.

Code of Federal Regulations, 2013 CFR

2013-04-01

... SERVICES (CONTINUED) MEDICAL DEVICES GENERAL HOSPITAL AND PERSONAL USE DEVICES General Hospital and... electrical signal. The device includes signal amplification, conditioning, and display equipment. (b...

21 CFR 880.2460 - Electrically powered spinal fluid pressure monitor.

Code of Federal Regulations, 2012 CFR

2012-04-01

... SERVICES (CONTINUED) MEDICAL DEVICES GENERAL HOSPITAL AND PERSONAL USE DEVICES General Hospital and... electrical signal. The device includes signal amplification, conditioning, and display equipment. (b...

21 CFR 880.2460 - Electrically powered spinal fluid pressure monitor.

Code of Federal Regulations, 2014 CFR

2014-04-01

... SERVICES (CONTINUED) MEDICAL DEVICES GENERAL HOSPITAL AND PERSONAL USE DEVICES General Hospital and... electrical signal. The device includes signal amplification, conditioning, and display equipment. (b...

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

NASA Technical Reports Server (NTRS)

Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

1985-01-01

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

A Systematic Review of Electric-Acoustic Stimulation

PubMed Central

Ching, Teresa Y. C.; Cowan, Robert

2013-01-01

Cochlear implant systems that combine electric and acoustic stimulation in the same ear are now commercially available and the number of patients using these devices is steadily increasing. In particular, electric-acoustic stimulation is an option for patients with severe, high frequency sensorineural hearing impairment. There have been a range of approaches to combining electric stimulation and acoustic hearing in the same ear. To develop a better understanding of fitting practices for devices that combine electric and acoustic stimulation, we conducted a systematic review addressing three clinical questions: what is the range of acoustic hearing in the implanted ear that can be effectively preserved for an electric-acoustic fitting?; what benefits are provided by combining acoustic stimulation with electric stimulation?; and what clinical fitting practices have been developed for devices that combine electric and acoustic stimulation? A search of the literature was conducted and 27 articles that met the strict evaluation criteria adopted for the review were identified for detailed analysis. The range of auditory thresholds in the implanted ear that can be successfully used for an electric-acoustic application is quite broad. The effectiveness of combined electric and acoustic stimulation as compared with electric stimulation alone was consistently demonstrated, highlighting the potential value of preservation and utilization of low frequency hearing in the implanted ear. However, clinical procedures for best fitting of electric-acoustic devices were varied. This clearly identified a need for further investigation of fitting procedures aimed at maximizing outcomes for recipients of electric-acoustic devices. PMID:23539259

Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

NASA Astrophysics Data System (ADS)

Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

2017-09-01

The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

Heat to electricity conversion by cold carrier emissive energy harvesters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strandberg, Rune

2015-12-07

This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings whilemore » converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved.« less

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

PubMed Central

Raeis-Hosseini, Niloufar; Rho, Junsuk

2017-01-01

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

Description of a MIL-STD-1553B Data Bus Ada Driver for the LeRC EPS Testbed

NASA Technical Reports Server (NTRS)

Mackin, Michael A.

1995-01-01

This document describes the software designed to provide communication between control computers in the NASA Lewis Research Center Electrical Power System Testbed using MIL-STD-1553B. The software drivers are coded in the Ada programming language and were developed on a MSDOS-based computer workstation. The Electrical Power System (EPS) Testbed is a reduced-scale prototype space station electrical power system. The power system manages and distributes electrical power from the sources (batteries or photovoltaic arrays) to the end-user loads. The electrical system primary operates at 120 volts DC, and the secondary system operates at 28 volts DC. The devices which direct the flow of electrical power are controlled by a network of six control computers. Data and control messages are passed between the computers using the MIL-STD-1553B network. One of the computers, the Power Management Controller (PMC), controls the primary power distribution and another, the Load Management Controller (LMC), controls the secondary power distribution. Each of these computers communicates with two other computers which act as subsidiary controllers. These subsidiary controllers are, in turn, connected to the devices which directly control the flow of electrical power.

Disaster preparedness for technology and electricity-dependent children and youth with special health care needs.

PubMed

Sakashita, Kazumi; Matthews, Wallace J; Yamamoto, Loren G

2013-06-01

Children and youth with special health care needs (CYSHCN) are complex and often dependent on electrical devices (technoelectric dependent) for life support/maintenance. Because they are reliant on electricity and electricity failure is common, the purpose of this study was to survey their preparedness for electricity failure. Parents and caregivers of technoelectric CYSHCN were asked to complete a preparedness questionnaire. We collected a convenience sample of 50 patients. These 50 patients utilized a total of 166 electrical devices. A home ventilator, oxygen concentrator, and a feeding pump were identified as the most important device for the children in 35 of the 50 patients, yet only 19 of the 35 patients could confirm that this device had a battery backup. Also, 22 of the 50 patients had a prolonged power failure preparedness plan. Technoelectric-dependent CYSHCN are poorly prepared for electrical power failure.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer.

PubMed

Singh, Mandeep; Palazzo, Gerardo; Romanazzi, Giuseppe; Suranna, Gian Paolo; Ditaranto, Nicoletta; Di Franco, Cinzia; Santacroce, Maria Vittoria; Mulla, Mohammad Yusuf; Magliulo, Maria; Manoli, Kyriaki; Torsi, Luisa

2014-01-01

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na(+) doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in "transient" implantable systems.

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical transport properties since such systems are halfmetallic in nature and promise the possibilities of spin injection and detection. The study was extended to dilute magnetic semiconducting nanowire system of Cd1-xMnxTe which possess both magnetic and semiconducting properties. In summary, the studies made in this thesis will offer a new understanding of spin transport behavior for future technology.

Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aydogan, Pinar; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr; Arslan, Engin

2015-09-21

We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphenemore » layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.« less

Challenges in sensor development for the electric utility industry

NASA Astrophysics Data System (ADS)

Ward, Barry H.

1999-01-01

The electric utility industry is reducing operating costs in order to prepare for deregulation. The reduction in operating cost has meant a reduction in manpower. The ability to utilize remaining maintenance staff more effectively and to stay competitive in a deregulated environment has therefore become critical. In recent years, the industry has moved away from routine or periodic maintenance to predictive or condition based maintenance. This requires the assessment of equipment condition by frequent testing and inspection; a requirement that is incompatible with cost reduction. To overcome this dilemma, industry trends are toward condition monitoring, whereby the health of apparatus is monitored continuously. This requires the installation of sensors hr transducers on power equipment and the data taken forwarded to an intelligent device for further processing. These devices then analyze the data and make evaluations based on parameter levels or trends, in an attempt to predict possible deterioration. This continuous monitoring allows the electric utility to schedule maintenance on an as needed basis. The industry has been faced with many challenges in sensor design. The measurement of physical, chemical and electrical parameters under extreme conditions of electric fields, magnetic fields, temperature, corrosion, etc. is extensive. This paper will give an overview of these challenges and the solutions adopted for apparatus such as power transformers, circuit breakers, boilers, cables, batteries, and rotating machinery.

Electronic firing systems and methods for firing a device

DOEpatents

Frickey, Steven J [Boise, ID; Svoboda, John M [Idaho Falls, ID

2012-04-24

An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

Operations manual for the patient assist device. [to handle electrical appliances

NASA Technical Reports Server (NTRS)

Schrader, M. A.

1973-01-01

Quadriplegic patients and multiple amputee patients are almost totally dependent on nursing personnel for any activities or interests in which they participate. A patient assist device is reported which provides patient control over electrical devices in his environment. The patient operates three switches to acquire control over a desired electrical appliance. The type switches employed are chosen to conform to patient capabilities, even when such capabilities are as limited as eye or head movements. The switch operations are sensed and converted into command signals by the patient assist device to control ten electrical appliances simulataneously and independently.

Motor monitoring method and apparatus using high frequency current components

DOEpatents

Casada, D.A.

1996-05-21

A motor current analysis method and apparatus for monitoring electrical-motor-driven devices are disclosed. The method and apparatus utilize high frequency portions of the motor current spectra to evaluate the condition of the electric motor and the device driven by the electric motor. The motor current signal produced as a result of an electric motor is monitored and the low frequency components of the signal are removed by a high-pass filter. The signal is then analyzed to determine the condition of the electrical motor and the driven device. 16 figs.

Motor monitoring method and apparatus using high frequency current components

DOEpatents

Casada, Donald A.

1996-01-01

A motor current analysis method and apparatus for monitoring electrical-motor-driven devices. The method and apparatus utilize high frequency portions of the motor current spectra to evaluate the condition of the electric motor and the device driven by the electric motor. The motor current signal produced as a result of an electric motor is monitored and the low frequency components of the signal are removed by a high-pass filter. The signal is then analyzed to determine the condition of the electrical motor and the driven device.

Increasing throughput of multiplexed electrical bus in pipe-lined architecture

DOEpatents

Asaad, Sameh; Brezzo, Bernard V; Kapur, Mohit

2014-05-27

Techniques are disclosed for increasing the throughput of a multiplexed electrical bus by exploiting available pipeline stages of a computer or other system. For example, a method for increasing a throughput of an electrical bus that connects at least two devices in a system comprises introducing at least one signal hold stage in a signal-receiving one of the two devices, such that a maximum frequency at which the two devices are operated is not limited by a number of cycles of an operating frequency of the electrical bus needed for a signal to propagate from a signal-transmitting one of the two devices to the signal-receiving one of the two devices. Preferably, the signal hold stage introduced in the signal-receiving one of the two devices is a pipeline stage re-allocated from the signal-transmitting one of the two devices.

Piezoelectric-Induced Triboelectric Hybrid Nanogenerators Based on the ZnO Nanowire Layer Decorated on the Au/polydimethylsiloxane-Al Structure for Enhanced Triboelectric Performance.

PubMed

Jirayupat, Chaiyanut; Wongwiriyapan, Winadda; Kasamechonchung, Panita; Wutikhun, Tuksadon; Tantisantisom, Kittipong; Rayanasukha, Yossawat; Jiemsakul, Thanakorn; Tansarawiput, Chookiat; Liangruksa, Monrudee; Khanchaitit, Paisan; Horprathum, Mati; Porntheeraphat, Supanit; Klamchuen, Annop

2018-02-21

Here, we demonstrate a novel device structure design to enhance the electrical conversion output of a triboelectric device through the piezoelectric effect called as the piezo-induced triboelectric (PIT) device. By utilizing the piezopotential of ZnO nanowires embedded into the polydimethylsiloxane (PDMS) layer attached on the top electrode of the conventional triboelectric device (Au/PDMS-Al), the PIT device exhibits an output power density of 50 μW/cm 2 , which is larger than that of the conventional triboelectric device by up to 100 folds under the external applied force of 8.5 N. We found that the effect of the external piezopotential on the top Au electrode of the triboelectric device not only enhances the electron transfer from the Al electrode to PDMS but also boosts the internal built-in potential of the triboelectric device through an external electric field of the piezoelectric layer. Furthermore, 100 light-emitting diodes (LEDs) could be lighted up via the PIT device, whereas the conventional device could illuminate less than 20 LED bulbs. Thus, our results highlight that the enhancement of the triboelectric output can be achieved by using a PIT device structure, which enables us to develop hybrid nanogenerators for various self-power electronics such as wearable and mobile devices.

78 FR 35173 - Physical Medicine Devices; Reclassification of Stair-Climbing Wheelchairs

Federal Register 2010, 2011, 2012, 2013, 2014

2013-06-12

.... Electromagnetic interference: The device may interfere with the operation of other electrical devices or be... electromagnetic compatibility testing as well as characterization of speed/acceleration, battery longevity, and... electrical safety and electromagnetic compatibility of the device. Performance testing must demonstrate...

Graphene-based vdW heterostructure Induced High-efficiency Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Liang, Shijun; Ang, Lay Kee

Thermoelectric material (TE) can convert the heat into electricity to provide green energy source and its performance is characterized by a figure of merit (ZT) parameter. Traditional TE materials only give ZT equal to around 1 at room temperature. But, it is believed that materials with ZT >3 will find wide applications at this low temperature range. Prior studies have implied that the interrelation between electric conductivity and lattice thermal conductivity renders the goal of engineering ZT of bulk materials to reach ZT >3. In this work, we propose a high-efficiency van del Waals (vdW) heterostructure-based thermionic device with graphene electrodes, which is able to harvest wasted heat (around 400K) based on the newly established thermionic emission law of graphene electrodes instead of Seebeck effect, to boost the efficiency of power generation over 10% around room temperature. The efficiency can be above 20% if the Schottky barrier height and cross-plane lattice thermal conductivity of transition metal dichacogenides (TMD) materials can be fine-engineered. As a refrigerator at 260 K, the efficiency is 50% to 80% of Carnot efficiency. Finally, we identify two TMD materials as the ideal candidates of graphene/TMD/graphene devices based on the state-of-art technology.

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2014 CFR

2014-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2013 CFR

2013-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2012 CFR

2012-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

Tunable reflectance of an inverse opal-chiral nematic liquid crystal multilayer device by electric- or thermal-control.

PubMed

Zhang, Yuxian; Zhao, Weidong; Wen, Jiahui; Li, Jinming; Yang, Zhou; Wang, Dong; Cao, Hui; Quan, Maohua

2017-05-21

A new type of electric- or thermal-responsive multilayer device composed of SiO 2 bilayer inverse opal (IOP) and chiral nematic liquid crystals (N*LCs) was developed. Bilayer IOP was fabricated by layer-by-layer assembly of polystyrene (PS) spheres with two different sizes and showed a reflectance in an extended range of the near-infrared region. Furthermore, the electrically or thermally tunable reflectance of the bilayer-IOP-N*LC device was investigated. The device exhibited the photonic bandgap (PBG) of the N*LC-IOP composite structure with the application of an electric field (voltage-on), while it presented the reflectance of N*LCs without an electric field (voltage-off) and the electrically-responsive behaviour could be reversibly switched. Besides, the device exhibited a gradient redshift of reflectance as temperature increased below the clearing point (T C ) while it showed the PBG of the N*LC-IOP composite structure when the temperature was above T C .

The strain capacitor: A novel energy storage device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb Shuvra, Pranoy; McNamara, Shamus, E-mail: shamus.mcnamara@louisville.edu

2014-12-15

A novel electromechanical energy storage device is reported that has the potential to have high energy densities. It can efficiently store both mechanical strain energy and electrical energy in the form of an electric field between the electrodes of a strain-mismatched bilayer capacitor. When the charged device is discharged, both the electrical and mechanical energy are extracted in an electrical form. The charge-voltage profile of the device is suitable for energy storage applications since a larger portion of the stored energy can be extracted at higher voltage levels compared to a normal capacitor. Its unique features include the potential formore » long lifetime, safety, portability, wide operating temperature range, and environment friendliness. The device can be designed to operate over varied operating voltage ranges by selecting appropriate materials and by changing the dimensions of the device. In this paper a finite element model of the device is developed to verify and demonstrate the potential of the device as an energy storage element. This device has the potential to replace conventional energy storage devices.« less

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

NASA Astrophysics Data System (ADS)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

NASA Astrophysics Data System (ADS)

Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

2014-10-01

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

PubMed Central

Preciado, Edwin; Schülein, Florian J.R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2015-01-01

Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

Platinum-decorated reduced graphene oxide/polyaniline:poly(4-styrenesulfonate) hybrid paste for flexible dipole tag-antenna applications

NASA Astrophysics Data System (ADS)

Lee, Jun Seop; Kim, Minkyu; Lee, Choonghyeon; Cho, Sunghun; Oh, Jungkyun; Jang, Jyongsik

2015-02-01

With recent developments in technology, tremendous effort has been devoted to producing materials for flexible device systems. As a promising approach, solution-processed conducting polymers (CPs) have been extensively studied owing to their facile synthesis, high electrical conductivity, and various morphologies with diverse substrates. Here, we report the demonstration of platinum decorated reduced graphene oxide intercalated polyanililne:poly(4-styrenesulfonate) (Pt_rGO/PANI:PSS) hybrid paste for flexible electric devices. First, platinum decorated reduced graphene oxide (Pt_rGO) was fabricated through the chemical reduction of platinum cations and subsequent heat reduction of GO sheets. Then, the Pt_rGO was mixed with PANI:PSS solution dispersed in diethylene glycol (DEG) using sonication to form a hybrid PANI-based paste (Pt_rGO/PANI:PSS). The Pt_rGO/PANI:PSS was printed as a micropattern and exhibited high electrical conductivity (245.3 S cm-1) with flexible stability. Moreover, it was used in a dipole tag antenna application, where it displayed 0.15 GHz bandwidth and high transmitted power efficiency (99.6%).With recent developments in technology, tremendous effort has been devoted to producing materials for flexible device systems. As a promising approach, solution-processed conducting polymers (CPs) have been extensively studied owing to their facile synthesis, high electrical conductivity, and various morphologies with diverse substrates. Here, we report the demonstration of platinum decorated reduced graphene oxide intercalated polyanililne:poly(4-styrenesulfonate) (Pt_rGO/PANI:PSS) hybrid paste for flexible electric devices. First, platinum decorated reduced graphene oxide (Pt_rGO) was fabricated through the chemical reduction of platinum cations and subsequent heat reduction of GO sheets. Then, the Pt_rGO was mixed with PANI:PSS solution dispersed in diethylene glycol (DEG) using sonication to form a hybrid PANI-based paste (Pt_rGO/PANI:PSS). The Pt_rGO/PANI:PSS was printed as a micropattern and exhibited high electrical conductivity (245.3 S cm-1) with flexible stability. Moreover, it was used in a dipole tag antenna application, where it displayed 0.15 GHz bandwidth and high transmitted power efficiency (99.6%). Electronic supplementary information (ESI) available: TEM images of Pr_rGOs, XRD spectra of various PANI-based hybrid materials, electrical conductivity of Pt_rGO/PANI:PSS with different Pt amounts, surface resistance changes of micropatterns, return loss of the antenna with bending deformation, and transmitted power efficiency of the antenna with bending cycles. See DOI: 10.1039/c4nr06189f

On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

NASA Technical Reports Server (NTRS)

Siles Perez, Jose Vicente (Inventor); Chattopadhyay, Goutam (Inventor); Lee, Choonsup (Inventor); Schlecht, Erich T. (Inventor); Jung-Kubiak, Cecile D. (Inventor); Mehdi, Imran (Inventor)

2015-01-01

A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Challenges facing lithium batteries and electrical double-layer capacitors.

PubMed

Choi, Nam-Soon; Chen, Zonghai; Freunberger, Stefan A; Ji, Xiulei; Sun, Yang-Kook; Amine, Khalil; Yushin, Gleb; Nazar, Linda F; Cho, Jaephil; Bruce, Peter G

2012-10-01

Energy-storage technologies, including electrical double-layer capacitors and rechargeable batteries, have attracted significant attention for applications in portable electronic devices, electric vehicles, bulk electricity storage at power stations, and "load leveling" of renewable sources, such as solar energy and wind power. Transforming lithium batteries and electric double-layer capacitors requires a step change in the science underpinning these devices, including the discovery of new materials, new electrochemistry, and an increased understanding of the processes on which the devices depend. The Review will consider some of the current scientific issues underpinning lithium batteries and electric double-layer capacitors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MIXS on BepiColombo and its DEPFET based focal plane instrumentation

NASA Astrophysics Data System (ADS)

Treis, J.; Andricek, L.; Aschauer, F.; Heinzinger, K.; Herrmann, S.; Hilchenbach, M.; Lauf, T.; Lechner, P.; Lutz, G.; Majewski, P.; Porro, M.; Richter, R. H.; Schaller, G.; Schnecke, M.; Schopper, F.; Soltau, H.; Stefanescu, A.; Strüder, L.; de Vita, G.

2010-12-01

Focal plane instrumentation based on DEPFET Macropixel devices, being a combination of the Detector-Amplifier structure DEPFET with a silicon drift chamber (SDD), has been proposed for the MIXS (Mercury Imaging X-ray Spectrometer) instrument on ESA's Mercury exploration mission BepiColombo. MIXS images X-ray fluorescent radiation from the Mercury surface with a lightweight X-ray mirror system on the focal plane detector to measure the spatially resolved element abundance in Mercury's crust. The sensor needs to have an energy resolution better than 200 eV FWHM at 1 keV and is required to cover an energy range from 0.5 to 10 keV, for a pixel size of 300×300μm2. Main challenges for the instrument are radiation damage and the difficult thermal environment in the mercury orbit. The production of the first batch of flight devices has been finished at the MPI semiconductor laboratory. Prototype modules have been assembled to verify the electrical properties of the devices; selected results are presented here. The prototype devices, Macropixel prototypes for the SIMBOL-X focal plane, are electrically fully compatible, but have a pixel size of 0.5×0.5 mm2. Excellent homogeneity and near Fano-limited energy resolution at high readout speeds have been observed on these devices.

Droplet Microfluidics for Chip-Based Diagnostics

PubMed Central

Kaler, Karan V. I. S.; Prakash, Ravi

2014-01-01

Droplet microfluidics (DMF) is a fluidic handling technology that enables precision control over dispensing and subsequent manipulation of droplets in the volume range of microliters to picoliters, on a micro-fabricated device. There are several different droplet actuation methods, all of which can generate external stimuli, to either actively or passively control the shape and positioning of fluidic droplets over patterned substrates. In this review article, we focus on the operation and utility of electro-actuation-based DMF devices, which utilize one or more micro-/nano-patterned substrates to facilitate electric field-based handling of chemical and/or biological samples. The underlying theory of DMF actuations, device fabrication methods and integration of optical and opto-electronic detectors is discussed in this review. Example applications of such electro-actuation-based DMF devices have also been included, illustrating the various actuation methods and their utility in conducting chip-based laboratory and clinical diagnostic assays. PMID:25490590

Electrical Properties of MWCNT/HDPE Composite-Based MSM Structure Under Neutron Irradiation

NASA Astrophysics Data System (ADS)

Kasani, H.; Khodabakhsh, R.; Taghi Ahmadi, M.; Rezaei Ochbelagh, D.; Ismail, Razali

2017-04-01

Because of their low cost, low energy consumption, high performance, and exceptional electrical properties, nanocomposites containing carbon nanotubes are suitable for use in many applications such as sensing systems. In this research work, a metal-semiconductor-metal (MSM) structure based on a multiwall carbon nanotube/high-density polyethylene (MWCNT/HDPE) nanocomposite is introduced as a neutron sensor. Scanning electron microscopy, Fourier-transform infrared, and infrared spectroscopy techniques were used to characterize the morphology and structure of the fabricated device. Current-voltage ( I- V) characteristic modeling showed that the device can be assumed to be a reversed-biased Schottky diode, if the voltage is high enough. To estimate the depletion layer length of the Schottky contact, impedance spectroscopy was employed. Therefore, the real and imaginary parts of the impedance of the MSM system were used to obtain electrical parameters such as the carrier mobility and dielectric constant. Experimental observations of the MSM structure under irradiation from an americium-beryllium (Am-Be) neutron source showed that the current level in the device decreased significantly. Subsequently, current pulses appeared in situ I- V and current-time ( I- t) curve measurements when increasing voltage was applied to the MSM system. The experimentally determined depletion region length as well as the space-charge-limited current mechanism for carrier transport were compared with the range for protons calculated using Monte Carlo n-particle extended (MCNPX) code, yielding the maximum energy of recoiled protons detectable by the device.

Accounting for Every Kilowatt

DTIC Science & Technology

2014-10-01

accountability of individual load con- sumption, forewarning of maintenance problems, and aware- ness of human activity based on electrical activity...accountability and maintenance examples were identified from our desks at MIT. Tech support can be anywhere and do the same. Human Activity DepNILM...provides awareness of human activity within a net- work. Each device has an electrical fingerprint, and specific de- vices imply associated human actions

Integrated Sensing and Information Processing Theme-Based Redesign of the Undergraduate Electrical and Computer Engineering Curriculum at Duke University

ERIC Educational Resources Information Center

Ybarra, Gary A.; Collins, Leslie M.; Huettel, Lisa G.; Brown, April S.; Coonley, Kip D.; Massoud, Hisham Z.; Board, John A.; Cummer, Steven A.; Choudhury, Romit Roy; Gustafson, Michael R.; Jokerst, Nan M.; Brooke, Martin A.; Willett, Rebecca M.; Kim, Jungsang; Absher, Martha S.

2011-01-01

The field of electrical and computer engineering has evolved significantly in the past two decades. This evolution has broadened the field of ECE, and subfields have seen deep penetration into very specialized areas. Remarkable devices and systems arising from innovative processes, exotic materials, high speed computer simulations, and complex…

Optical scanning tests of complex CMOS microcircuits

NASA Technical Reports Server (NTRS)

Levy, M. E.; Erickson, J. J.

1977-01-01

The new test method was based on the use of a raster-scanned optical stimulus in combination with special electrical test procedures. The raster-scanned optical stimulus was provided by an optical spot scanner, an instrument that combines a scanning optical microscope with electronic instrumentation to process and display the electric photoresponse signal induced in a device that is being tested.

Simulation of Electric Propulsion Thrusters

DTIC Science & Technology

2011-01-01

and operational lifetime. The second area of modelling activity concerns the plumes produced by electric thrusters. Detailed information on the plumes ...to reproduce the in-orbit space environment using ground-based laboratory facilities. Device modelling also plays an important role in plume ...of the numerical analysis of other aspects of thruster design, such as thermal and structural processes, is omitted here. There are two fundamental

Device for remote operation of electrical disconnect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coleman, Jody Rustyn; Bobbitt, III, John Thomas

Provided is a device for remote operation of an electrical disconnect. The device can include a handle clamp configured to be secured to an extending member of the electrical disconnect. The device can further include a case clamp configured to be secured to a rigid portion of the electrical disconnect. The device can further include a cable having an exterior sheath coaxially surrounding an inner cable. The inner cable can be coaxially slidable with respect to the exterior sheath. The inner cable can extend through an opening of the case clamp and be secured to the handle clamp. The devicemore » can further include an actuator configured to coaxially slide the inner cable such that the handle clamp is actuated towards the case clamp.« less

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

NASA Astrophysics Data System (ADS)

Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

2017-07-01

We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field. Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767).

Design and Fabrication of a Dual-Photoelectrode Fuel Cell towards Cost-Effective Electricity Production from Biomass.

PubMed

Zhang, Bingqing; Fan, Wenjun; Yao, Tingting; Liao, Shichao; Li, Ailong; Li, Deng; Liu, Mingyao; Shi, Jingying; Liao, Shijun; Li, Can

2017-01-10

A photo fuel cell (PFC) offers an attractive way to simultaneously convert solar and biomass energy into electricity. Photocatalytic biomass oxidation on a semiconductor photoanode combined with dark electrochemical reduction of oxygen molecules on a metal cathode (usually Pt) in separated compartments is the common configuration for a PFC. Herein, we report a membrane-free PFC based on a dual electrode, including a W-doped BiVO 4 photoanode and polyterthiophene photocathode for solar-stimulated biomass-to-electricity conversion. Air- and water-soluble biomass derivatives can be directly used as reagents. The optimal device yields an open-circuit voltage (V OC ) of 0.62 V, a short-circuit current density (J SC ) of 775 μA cm -2 , and a maximum power density (P max ) of 82 μW cm -2 with glucose as the feedstock under tandem illumination, which outperforms dual-photoelectrode PFCs previously reported. Neither costly separating membranes nor Pt-based catalysts are required in the proposed PFC architecture. Our work may inspire rational device designs for cost-effective electricity generation from renewable resources. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diagnostic for two-mode variable valve activation device

DOEpatents

Fedewa, Andrew M

2014-01-07

A method is provided for diagnosing a multi-mode valve train device which selectively provides high lift and low lift to a combustion valve of an internal combustion engine having a camshaft phaser actuated by an electric motor. The method includes applying a variable electric current to the electric motor to achieve a desired camshaft phaser operational mode and commanding the multi-mode valve train device to a desired valve train device operational mode selected from a high lift mode and a low lift mode. The method also includes monitoring the variable electric current and calculating a first characteristic of the parameter. The method also includes comparing the calculated first characteristic against a predetermined value of the first characteristic measured when the multi-mode valve train device is known to be in the desired valve train device operational mode.

Infrastructure for Integration of Legacy Electrical Equipment into a Smart-Grid Using Wireless Sensor Networks.

PubMed

de Araújo, Paulo Régis C; Filho, Raimir Holanda; Rodrigues, Joel J P C; Oliveira, João P C M; Braga, Stephanie A

2018-04-24

At present, the standardisation of electrical equipment communications is on the rise. In particular, manufacturers are releasing equipment for the smart grid endowed with communication protocols such as DNP3, IEC 61850, and MODBUS. However, there are legacy equipment operating in the electricity distribution network that cannot communicate using any of these protocols. Thus, we propose an infrastructure to allow the integration of legacy electrical equipment to smart grids by using wireless sensor networks (WSNs). In this infrastructure, each legacy electrical device is connected to a sensor node, and the sink node runs a middleware that enables the integration of this device into a smart grid based on suitable communication protocols. This middleware performs tasks such as the translation of messages between the power substation control centre (PSCC) and electrical equipment in the smart grid. Moreover, the infrastructure satisfies certain requirements for communication between the electrical equipment and the PSCC, such as enhanced security, short response time, and automatic configuration. The paper’s contributions include a solution that enables electrical companies to integrate their legacy equipment into smart-grid networks relying on any of the above mentioned communication protocols. This integration will reduce the costs related to the modernisation of power substations.

Infrastructure for Integration of Legacy Electrical Equipment into a Smart-Grid Using Wireless Sensor Networks

PubMed Central

de Araújo, Paulo Régis C.; Filho, Raimir Holanda; Oliveira, João P. C. M.; Braga, Stephanie A.

2018-01-01

At present, the standardisation of electrical equipment communications is on the rise. In particular, manufacturers are releasing equipment for the smart grid endowed with communication protocols such as DNP3, IEC 61850, and MODBUS. However, there are legacy equipment operating in the electricity distribution network that cannot communicate using any of these protocols. Thus, we propose an infrastructure to allow the integration of legacy electrical equipment to smart grids by using wireless sensor networks (WSNs). In this infrastructure, each legacy electrical device is connected to a sensor node, and the sink node runs a middleware that enables the integration of this device into a smart grid based on suitable communication protocols. This middleware performs tasks such as the translation of messages between the power substation control centre (PSCC) and electrical equipment in the smart grid. Moreover, the infrastructure satisfies certain requirements for communication between the electrical equipment and the PSCC, such as enhanced security, short response time, and automatic configuration. The paper’s contributions include a solution that enables electrical companies to integrate their legacy equipment into smart-grid networks relying on any of the above mentioned communication protocols. This integration will reduce the costs related to the modernisation of power substations. PMID:29695099

Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

McPherson, J. W., E-mail: mcpherson.reliability@yahoo.com

The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field E{sub diel} occurs and this causes a sharp rise in the effective Lorentz factor L{sub eff}. At capacitor and transistor edges,more » L{sub eff} is found to increase to a value 2/3 < L{sub eff} < 1. The increase in L{sub eff} results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has important time-dependent dielectric breakdown (TDDB) implications for all electronic devices utilizing polar materials, including GaN devices that suffer from device-edge TDDB.« less

The performance of residential micro-cogeneration coupled with thermal and electrical storage

NASA Astrophysics Data System (ADS)

Kopf, John

Over 80% of residential secondary energy consumption in Canada and Ontario is used for space and water heating. The peak electricity demands resulting from residential energy consumption increase the reliance on fossil-fuel generation stations. Distributed energy resources can help to decrease the reliance on central generation stations. Presently, distributed energy resources such as solar photovoltaic, wind and bio-mass generation are subsidized in Ontario. Micro-cogeneration is an emerging technology that can be implemented as a distributed energy resource within residential or commercial buildings. Micro-cogeneration has the potential to reduce a building's energy consumption by simultaneously generating thermal and electrical power on-site. The coupling of a micro-cogeneration device with electrical storage can improve the system's ability to reduce peak electricity demands. The performance potential of micro-cogeneration devices has yet to be fully realized. This research addresses the performance of a residential micro-cogeneration device and it's ability to meet peak occupant electrical loads when coupled with electrical storage. An integrated building energy model was developed of a residential micro-cogeneration system: the house, the micro-cogeneration device, all balance of plant and space heating components, a thermal storage device, an electrical storage device, as well as the occupant electrical and hot water demands. This model simulated the performance of a micro-cogeneration device coupled to an electrical storage system within a Canadian household. A customized controller was created in ESP-r to examine the impact of various system control strategies. The economic performance of the system was assessed from the perspective of a local energy distribution company and an end-user under hypothetical electricity export purchase price scenarios. It was found that with certain control strategies the micro-cogeneration system was able to improve the economic performance for both the end user and local distribution company.

Wireless Electrical Device Using Open-Circuit Elements Having No Electrical Connections

NASA Technical Reports Server (NTRS)

Taylor, Bryant Douglas (Inventor); Woodard, Stanley E. (Inventor)

2012-01-01

A wireless electrical device includes an electrically unconnected electrical conductor and at least one electrically unconnected electrode spaced apart from the electrical conductor. The electrical conductor is shaped for storage of an electric field and a magnetic field. In the presence of a time-varying magnetic field, the electrical conductor so-shaped resonates to generate harmonic electric and magnetic field responses. Each electrode is at a location lying within the magnetic field response so-generated and is constructed such that a linear movement of electric charges is generated in each electrode due to the magnetic field response so-generated.

Analyzing intrinsic plasmonic chirality by tracking the interplay of electric and magnetic dipole modes.

PubMed

Hu, Li; Huang, Yingzhou; Pan, Lujun; Fang, Yurui

2017-09-11

Plasmonic chirality represents significant potential for novel nanooptical devices due to its association with strong chiroptical responses. Previous reports on plasmonic chirality mechanism mainly focus on phase retardation and coupling. In this paper, we propose a model similar to the chiral molecules for explaining the intrinsic plasmonic chirality mechanism of varies 3D chiral structures quantitatively based on the interplay and mixing of electric and magnetic dipole modes (directly from electromagnetic field numerical simulations), which forms mixed electric and magnetic polarizability.

Smart Grid Maturity Model: SGMM Model Definition. Version 1.2

DTIC Science & Technology

2011-09-01

electricity (e.g., solar power and wind) to be connected to the grid. If this were the case, any excess generated electricity would flow onto the grid, and... solar panels to the grid or electric vehicles to the grid. CUST-4.7 A common residential customer experience has been integrated. This experience is...individual devices (e.g., appliances) has been deployed. CUST-5.3 Plug-and-play customer-based generation (e.g., wind and solar ) is supported. This

Electricity from the Silk Cocoon Membrane

PubMed Central

Tulachan, Brindan; Meena, Sunil Kumar; Rai, Ratan Kumar; Mallick, Chandrakant; Kusurkar, Tejas Sanjeev; Teotia, Arun Kumar; Sethy, Niroj Kumar; Bhargava, Kalpana; Bhattacharya, Shantanu; Kumar, Ashok; Sharma, Raj Kishore; Sinha, Neeraj; Singh, Sushil Kumar; Das, Mainak

2014-01-01

Silk cocoon membrane (SCM) is an insect engineered structure. We studied the electrical properties of mulberry (Bombyx mori) and non-mulberry (Tussar, Antheraea mylitta) SCM. When dry, SCM behaves like an insulator. On absorbing moisture, it generates electrical current, which is modulated by temperature. The current flowing across the SCM is possibly ionic and protonic in nature. We exploited the electrical properties of SCM to develop simple energy harvesting devices, which could operate low power electronic systems. Based on our findings, we propose that the temperature and humidity dependent electrical properties of the SCM could find applications in battery technology, bio-sensor, humidity sensor, steam engines and waste heat management. PMID:24961354

Electricity from the silk cocoon membrane.

PubMed

Tulachan, Brindan; Meena, Sunil Kumar; Rai, Ratan Kumar; Mallick, Chandrakant; Kusurkar, Tejas Sanjeev; Teotia, Arun Kumar; Sethy, Niroj Kumar; Bhargava, Kalpana; Bhattacharya, Shantanu; Kumar, Ashok; Sharma, Raj Kishore; Sinha, Neeraj; Singh, Sushil Kumar; Das, Mainak

2014-06-25

Silk cocoon membrane (SCM) is an insect engineered structure. We studied the electrical properties of mulberry (Bombyx mori) and non-mulberry (Tussar, Antheraea mylitta) SCM. When dry, SCM behaves like an insulator. On absorbing moisture, it generates electrical current, which is modulated by temperature. The current flowing across the SCM is possibly ionic and protonic in nature. We exploited the electrical properties of SCM to develop simple energy harvesting devices, which could operate low power electronic systems. Based on our findings, we propose that the temperature and humidity dependent electrical properties of the SCM could find applications in battery technology, bio-sensor, humidity sensor, steam engines and waste heat management.

Electricity from the Silk Cocoon Membrane

NASA Astrophysics Data System (ADS)

Tulachan, Brindan; Meena, Sunil Kumar; Rai, Ratan Kumar; Mallick, Chandrakant; Kusurkar, Tejas Sanjeev; Teotia, Arun Kumar; Sethy, Niroj Kumar; Bhargava, Kalpana; Bhattacharya, Shantanu; Kumar, Ashok; Sharma, Raj Kishore; Sinha, Neeraj; Singh, Sushil Kumar; Das, Mainak

2014-06-01

Silk cocoon membrane (SCM) is an insect engineered structure. We studied the electrical properties of mulberry (Bombyx mori) and non-mulberry (Tussar, Antheraea mylitta) SCM. When dry, SCM behaves like an insulator. On absorbing moisture, it generates electrical current, which is modulated by temperature. The current flowing across the SCM is possibly ionic and protonic in nature. We exploited the electrical properties of SCM to develop simple energy harvesting devices, which could operate low power electronic systems. Based on our findings, we propose that the temperature and humidity dependent electrical properties of the SCM could find applications in battery technology, bio-sensor, humidity sensor, steam engines and waste heat management.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Gold nanostructures and methods of use

DOEpatents

Zhang, Jin Z [Santa Cruz, CA; Schwartzberg, Adam [Santa Cruz, CA; Olson, Tammy Y [Santa Cruz, CA

2012-03-20

The invention is drawn to novel nanostructures comprising hollow nanospheres and nanotubes for use as chemical sensors, conduits for fluids, and electronic conductors. The nanostructures can be used in microfluidic devices, for transporting fluids between devices and structures in analytical devices, for conducting electrical currents between devices and structure in analytical devices, and for conducting electrical currents between biological molecules and electronic devices, such as bio-microchips.

Gold nanostructures and methods of use

DOEpatents

Zhang, Jin Z.; Schwartzberg, Adam; Olson, Tammy Y.

2016-03-01

The invention is drawn to novel nanostructures comprising hollow nanospheres and nanotubes for use as chemical sensors, conduits for fluids, and electronic conductors. The nanostructures can be used in microfluidic devices, for transporting fluids between devices and structures in analytical devices, for conducting electrical currents between devices and structure in analytical devices, and for conducting electrical currents between biological molecules and electronic devices, such as bio-microchips.

Carbon nanotubes for voltage reduction and throughput enhancement of electrical cell lysis on a lab-on-a-chip.

PubMed

Shahini, Mehdi; Yeow, John T W

2011-08-12

We report on the enhancement of electrical cell lysis using carbon nanotubes (CNTs). Electrical cell lysis systems are widely utilized in microchips as they are well suited to integration into lab-on-a-chip devices. However, cell lysis based on electrical mechanisms has high voltage requirements. Here, we demonstrate that by incorporating CNTs into microfluidic electrolysis systems, the required voltage for lysis is reduced by half and the lysis throughput at low voltages is improved by ten times, compared to non-CNT microchips. In our experiment, E. coli cells are lysed while passing through an electric field in a microchannel. Based on the lightning rod effect, the electric field strengthened at the tip of the CNTs enhances cell lysis at lower voltage and higher throughput. This approach enables easy integration of cell lysis with other on-chip high-throughput sample-preparation processes.

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

Hydroxyapatite Nanowire-Based All-Weather Flexible Electrically Conductive Paper with Superhydrophobic and Flame-Retardant Properties.

PubMed

Chen, Fei-Fei; Zhu, Ying-Jie; Xiong, Zhi-Chao; Dong, Li-Ying; Chen, Feng; Lu, Bing-Qiang; Yang, Ri-Long

2017-11-15

How to survive under various harsh working conditions is a key challenge for flexible electronic devices because their performances are always susceptible to environments. Herein, we demonstrate the novel design and fabrication of a new kind of the all-weather flexible electrically conductive paper based on ultralong hydroxyapatite nanowires (HNs) with unique combination of the superhydrophobic surface, electrothermal effect, and flame retardancy. The superhydrophobic surface with water repellency stabilizes the electrically conductive performance of the paper in water. For example, the electrical current through the superhydrophobic paper onto which water droplets are deposited shows a little change (0.38%), and the electrical performance is steady as well even when the paper is immersed in water for 120 s (just 3.65% change). In addition, the intrinsic electrothermal effect of the electrically conductive paper can efficiently heat the paper to reach a high temperature, for example, 224.25 °C, within 10 s. The synergistic effect between the electrothermal effect and superhydrophobic surface accelerates the melting and removal of ice on the heated electrically conductive paper. Deicing efficiency of the heated superhydrophobic electrically conductive paper is ∼4.5 times that of the unheated superhydrophobic electrically conductive paper and ∼10.4 times that of the heated superhydrophilic paper. More importantly, benefiting from fire-resistant ultralong HNs, thermally stable Ketjen black, and Si-O backbone of poly(dimethylsiloxane), we demonstrate the stable and continuous service of the as-prepared electrically conductive paper in the flame for as long as 7 min. The electrical performance of the electrically conductive paper after flame treatment can maintain as high as 90.60% of the original value. The rational design of the electrically conductive paper with suitable building materials and structure demonstrated here will give an inspiration for the development of new kinds of all-weather flexible electronic devices that can work under harsh conditions.

Cooling devices and methods for use with electric submersible pumps

DOEpatents

Jankowski, Todd A; Hill, Dallas D

2014-12-02

Cooling devices for use with electric submersible pump motors include a refrigerator attached to the end of the electric submersible pump motor with the evaporator heat exchanger accepting all or a portion of the heat load from the motor. The cooling device can be a self-contained bolt-on unit, so that minimal design changes to existing motors are required.

Cooling devices and methods for use with electric submersible pumps

DOEpatents

Jankowski, Todd A.; Hill, Dallas D.

2016-07-19

Cooling devices for use with electric submersible pump motors include a refrigerator attached to the end of the electric submersible pump motor with the evaporator heat exchanger accepting all or a portion of the heat load from the motor. The cooling device can be a self-contained bolt-on unit, so that minimal design changes to existing motors are required.

78 FR 1162 - Cardiovascular Devices; Reclassification of External Cardiac Compressor

Federal Register 2010, 2011, 2012, 2013, 2014

2013-01-08

... safety and electromagnetic compatibility; For devices containing software, software verification... electromagnetic compatibility; For devices containing software, software verification, validation, and hazard... electrical components, appropriate analysis and testing must validate electrical safety and electromagnetic...

A graphene based frequency quadrupler

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-04-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices.

Commentary: physical approaches for the treatment of epilepsy: electrical and magnetic stimulation and cooling.

PubMed

Löscher, Wolfgang; Cole, Andrew J; McLean, Michael J

2009-04-01

Physical approaches for the treatment of epilepsy currently under study or development include electrical or magnetic brain stimulators and cooling devices, each of which may be implanted or applied externally. Some devices may stimulate peripheral structures, whereas others may be implanted directly into the brain. Stimulation may be delivered chronically, intermittently, or in response to either manual activation or computer-based detection of events of interest. Physical approaches may therefore ultimately be appropriate for seizure prophylaxis by causing a modification of the underlying substrate, presumably with a reduction in the intrinsic excitability of cerebral structures, or for seizure termination, by interfering with the spontaneous discharge of pathological neuronal networks. Clinical trials of device-based therapies are difficult due to ethical issues surrounding device implantation, problems with blinding, potential carryover effects that may occur in crossover designs if substrate modification occurs, and subject heterogeneity. Unresolved issues in the development of physical treatments include optimization of stimulation parameters, identification of the optimal volume of brain to be stimulated, development of adequate power supplies to stimulate the necessary areas, and a determination that stimulation itself does not promote epileptogenesis or adverse long-term effects on normal brain function.

A graphene based frequency quadrupler

PubMed Central

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-01-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices. PMID:28418013

Perforation patterned electrical interconnects

DOEpatents

Frey, Jonathan

2014-01-28

This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Dong; Song, Jiakun; Yu, Hailong

2016-03-14

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency ismore » as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.« less

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Cold plasma welding of polyaniline nanofibers with enhanced electrical and mechanical properties.

PubMed

Ye, Dong; Yu, Yao; Liu, Lin; Lu, Xinpei; Wu, Yue

2015-12-11

Joining conducting polymer (CP) nanofibers into an interconnected porous network can result in good mechanical and electrical contacts between nanofibers that can be beneficial for the high performance of CP-based devices. Here, we demonstrate the cold welding of polyaniline (PAni) nanofiber loose ends with cold plasma. The room-temperature and atmospheric-pressure helium micro-plasma jet launches highly charged ion bullets at a PAni nanofiber target with high precision and the highly charged ion bullet selectively induces field emission at the sharp nanofiber loose ends. This technique joins nanofiber tips without altering the morphology of the film and protonation thus leading to significantly enhanced electrical and mechanical properties. In addition, this technique has high spatial resolution and is able to selectively weld and dope regions of nanofiber film with promising novel device applications.

Cold plasma welding of polyaniline nanofibers with enhanced electrical and mechanical properties

NASA Astrophysics Data System (ADS)

Ye, Dong; Yu, Yao; Liu, Lin; Lu, Xinpei; Wu, Yue

2015-12-01

Joining conducting polymer (CP) nanofibers into an interconnected porous network can result in good mechanical and electrical contacts between nanofibers that can be beneficial for the high performance of CP-based devices. Here, we demonstrate the cold welding of polyaniline (PAni) nanofiber loose ends with cold plasma. The room-temperature and atmospheric-pressure helium micro-plasma jet launches highly charged ion bullets at a PAni nanofiber target with high precision and the highly charged ion bullet selectively induces field emission at the sharp nanofiber loose ends. This technique joins nanofiber tips without altering the morphology of the film and protonation thus leading to significantly enhanced electrical and mechanical properties. In addition, this technique has high spatial resolution and is able to selectively weld and dope regions of nanofiber film with promising novel device applications.

Electrically switchable photonic liquid crystal devices for routing of a polarized light wave

NASA Astrophysics Data System (ADS)

Rushnova, Irina I.; Melnikova, Elena A.; Tolstik, Alexei L.; Muravsky, Alexander A.

2018-04-01

The new mode of LC alignment based on photoalignment AtA-2 azo dye where the refractive interface between orthogonal orientations of the LC director exists without voltage and disappeared or changed with critical voltage has been proposed. The technology to fabricate electrically controlled liquid crystal elements for spatial separation and switching of linearly polarized light beams on the basis of the total internal reflection effect has been significantly improved. Its distinctive feature is the application of a composite alignment material comprising two sublayers of Nylon-6 and AtA-2 photoalignment azo dye offering patterned liquid crystal director orientation with high alignment quality value q = 0 . 998. The fabricated electrically controlled spatially structured liquid crystal devices enable implementation of propagation directions separation for orthogonally polarized light beams and their switching with minimal crosstalk.

Enhancement of Performance and Mechanism Studies of All-Solution Processed Small-Molecule based Solar Cells with an Inverted Structure.

PubMed

Long, Guankui; Wu, Bo; Yang, Xuan; Kan, Bin; Zhou, Ye-Cheng; Chen, Li-Chuan; Wan, Xiangjian; Zhang, Hao-Li; Sum, Tze Chien; Chen, Yongsheng

2015-09-30

Both solution-processed polymers and small molecule based solar cells have achieved PCEs over 9% with the conventional device structure. However, for the practical applications of photovoltaic technology, further enhancement of both device performance and stability are urgently required, particularly for the inverted structure devices, since this architecture will probably be most promising for the possible coming commercialization. In this work, we have fabricated both conventional and inverted structure devices using the same small molecular donor/acceptor materials and compared the performance of both device structures, and found that the inverted structure based device gave significantly improved performance, the highest PCE so far for inverted structure based device using small molecules as the donor. Furthermore, the inverted device shows a remarkable stability with almost no obvious degradation after three months. Systematic device physics and charge generation dynamics studies, including optical simulation, light-intensity-dependent current-voltage experiments, photocurrent density-effective voltage analyses, transient absorption measurements, and electrical simulations, indicate that the significantly enhanced performance using inverted device is ascribed to the increasing of Jsc compared to the conventional device, which in turn is mainly attributed to the increased absorption of photons in the active layers, rather than the reduced nongeminate recombination.

Electric drive systems including smoothing capacitor cooling devices and systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dede, Ercan Mehmet; Zhou, Feng

An electric drive system includes a smoothing capacitor including at least one terminal, a bus bar electrically coupled to the at least one terminal, a thermoelectric device including a first side and a second side positioned opposite the first side, where the first side is thermally coupled to at least one of the at least one terminal and the bus bar, and a cooling element thermally coupled to the second side of the thermoelectric device, where the cooling element dissipates heat from the thermoelectric device.

Electrical properties of dislocations in III-Nitrides

NASA Astrophysics Data System (ADS)

Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

2014-02-01

Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

2010-01-01

Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

Surface-Controlled Properties of Myosin Studied by Electric Field Modulation.

PubMed

van Zalinge, Harm; Ramsey, Laurence C; Aveyard, Jenny; Persson, Malin; Mansson, Alf; Nicolau, Dan V

2015-08-04

The efficiency of dynamic nanodevices using surface-immobilized protein molecular motors, which have been proposed for diagnostics, drug discovery, and biocomputation, critically depends on the ability to precisely control the motion of motor-propelled, individual cytoskeletal filaments transporting cargo to designated locations. The efficiency of these devices also critically depends on the proper function of the propelling motors, which is controlled by their interaction with the surfaces they are immobilized on. Here we use a microfluidic device to study how the motion of the motile elements, i.e., actin filaments propelled by heavy mero-myosin (HMM) motor fragments immobilized on various surfaces, is altered by the application of electrical loads generated by an external electric field with strengths ranging from 0 to 8 kVm(-1). Because the motility is intimately linked to the function of surface-immobilized motors, the study also showed how the adsorption properties of HMM on various surfaces, such as nitrocellulose (NC), trimethylclorosilane (TMCS), poly(methyl methacrylate) (PMMA), poly(tert-butyl methacrylate) (PtBMA), and poly(butyl methacrylate) (PBMA), can be characterized using an external field. It was found that at an electric field of 5 kVm(-1) the force exerted on the filaments is sufficient to overcome the frictionlike resistive force of the inactive motors. It was also found that the effect of assisting electric fields on the relative increase in the sliding velocity was markedly higher for the TMCS-derivatized surface than for all other polymer-based surfaces. An explanation of this behavior, based on the molecular rigidity of the TMCS-on-glass surfaces as opposed to the flexibility of the polymer-based ones, is considered. To this end, the proposed microfluidic device could be used to select appropriate surfaces for future lab-on-a-chip applications as illustrated here for the almost ideal TMCS surface. Furthermore, the proposed methodology can be used to gain fundamental insights into the functioning of protein molecular motors, such as the force exerted by the motors under different operational conditions.

46 CFR 111.40-15 - Overcurrent device.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Overcurrent device. 111.40-15 Section 111.40-15 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-15 Overcurrent device. The total load on any overcurrent device located in a...

46 CFR 111.40-15 - Overcurrent device.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Overcurrent device. 111.40-15 Section 111.40-15 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-15 Overcurrent device. The total load on any overcurrent device located in a...

46 CFR 111.40-15 - Overcurrent device.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Overcurrent device. 111.40-15 Section 111.40-15 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-15 Overcurrent device. The total load on any overcurrent device located in a...

46 CFR 111.40-15 - Overcurrent device.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Overcurrent device. 111.40-15 Section 111.40-15 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-15 Overcurrent device. The total load on any overcurrent device located in a...

46 CFR 111.40-15 - Overcurrent device.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Overcurrent device. 111.40-15 Section 111.40-15 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-15 Overcurrent device. The total load on any overcurrent device located in a...

Direct current stimulation of titanium interbody fusion devices in primates.

PubMed

Cook, Stephen D; Patron, Laura P; Christakis, Petros M; Bailey, Kirk J; Banta, Charles; Glazer, Paul A

2004-01-01

The fusion rate for anterior lumbar interbody fusion (ALIF) varies widely with the use of different interbody devices and bone graft options. Adjunctive techniques such as electrical stimulation may improve the rate of bony fusion. To determine if direct current (DC) electrical stimulation of a metallic interbody fusion device enhanced the incidence or extent of anterior bony fusion. ALIF was performed using titanium alloy interbody fusion devices with and without adjunctive DC electrical stimulation in nonhuman primates. ALIF was performed through an anterolateral approach in 35 macaques with autogenous bone graft and either a titanium alloy (Ti-6Al-4V) fusion device or femoral allograft ring. The fusion devices of 19 animals received high (current density 19.6 microA/cm2) or low (current density 5.4 microA/cm2) DC electrical stimulation using an implanted generator for a 12- or 26-week evaluation period. Fusion sites were studied using serial radiographs, computed tomography imaging, nondestructive mechanical testing and qualitative and semiquantitative histology. Fusion was achieved with the titanium fusion device and autogenous bone graft. At 12 weeks, the graft was consolidating and early to moderate bridging callus was observed in and around the device. By 26 weeks, the anterior callus formation was more advanced with increased evidence of bridging trabeculations and early bone remodeling. The callus formation was not as advanced or abundant for the allograft ring group. Histology revealed the spinal fusion device had an 86% incidence of bony fusion at 26 weeks compared with a 50% fusion rate for the allograft rings. DC electrical stimulation of the fusion device had a positive effect on anterior interbody fusion by increasing both the presence and extent of bony fusion in a current density-dependent manner. Adjunctive DC electrical stimulation of the fusion device improved the rate and extent of bony fusion compared with a nonstimulated device. The fusion device was equivalent to or better than the femoral allograft ring in all evaluations. The use of adjunctive direct current electrical stimulation may provide a means of improving anterior interbody fusion.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

Application of Multipurpose Cadastre to Evaluate Energy Security of Land Parcel (Case Study: Gedung A and Gedung B, Institut Teknologi Sumatra)

NASA Astrophysics Data System (ADS)

Alif, S. M.; Nugroho, A. P.; Leksono, B. E.

2018-03-01

Energy security has one of its dimensions: Short-term energy security which focuses on the ability of the energy system to react promptly to sudden changes within the supply-demand balance. Non-energy components (such as land parcel) that comprise an energy system are analysed comprehensively with other component to measure energy security related to energy supply. Multipurpose cadastre which is an integrated land information system containing legal, physical, and cultural is used to evaluate energy (electrical energy) security of land parcel. The fundamental component of multipurpose cadastre used to evaluate energy security is attribute data which is the value of land parcel facilities. Other fundamental components (geographic control data, base map data, cadastral data) are used as position information and provide weight in room (part of land parcel) valuation. High value-room means the room is comfortable and/or used productively by its occupant. The method of valuation is by comparing one facility to other facilities. Facilities included in room valuation are relatively static items (such as chair, desk, and cabinet) except lamps and other electronic devices. The room value and number of electronic devices which consume electrical energy are correlated with each other. Consumption of electrical energy of electronic devices in the room with average value remains constant while consumption in other room needs to be evaluated to save the energy. The result of this research shows that room value correlate weakly with number of electronic device in corresponding room. It shows excess energy consumed in low-value room. Although numbers of electronic devices do not always mean the consumption of electrical energy and there are plenty electronic devices, it is recommended for occupant to be careful in utilizing electronic devices in low-value room to minimize energy consumption.

Microfluidic multiplexing of solid-state nanopores

NASA Astrophysics Data System (ADS)

Jain, Tarun; Rasera, Benjamin C.; Guerrero, Ricardo Jose S.; Lim, Jong-Min; Karnik, Rohit

2017-12-01

Although solid-state nanopores enable electronic analysis of many clinically and biologically relevant molecular structures, there are few existing device architectures that enable high-throughput measurement of solid-state nanopores. Herein, we report a method for microfluidic integration of multiple solid-state nanopores at a high density of one nanopore per (35 µm2). By configuring microfluidic devices with microfluidic valves, the nanopores can be rinsed from a single fluid input while retaining compatibility for multichannel electrical measurements. The microfluidic valves serve the dual purpose of fluidic switching and electric switching, enabling serial multiplexing of the eight nanopores with a single pair of electrodes. Furthermore, the device architecture exhibits low noise and is compatible with electroporation-based in situ nanopore fabrication, providing a scalable platform for automated electronic measurement of a large number of integrated solid-state nanopores.

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

PubMed Central

2012-01-01

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device. PMID:23009105

Controllable Sonar Lenses and Prisms Based on ERFs

NASA Technical Reports Server (NTRS)

Bar-Cohen, Yoseph; Sherrit, Stewart; Chang, Zensheu; Bao, Xiaoqi; Paustian, Iris; Lopes, Joseph; Folds, Donald

2004-01-01

Sonar-beam-steering devices of the proposed type would contain no moving parts and would be considerably smaller and less power-hungry, relative to conventional multiple-beam sonar arrays. The proposed devices are under consideration for installation on future small autonomous underwater vehicles because the sizes and power demands of conventional multiple-beam arrays are excessive, and motors used in single-beam mechanically scanned systems are also not reliable. The proposed devices would include a variety of electrically controllable acoustic prisms, lenses, and prism/lens combinations both simple and compound. These devices would contain electrorheological fluids (ERFs) between electrodes. An ERF typically consists of dielectric particles floating in a dielectric fluid. When an electric field is applied to the fluid, the particles become grouped into fibrils aligned in rows, with a consequent increase in the viscosity of the fluid and a corresponding increase in the speed of sound in the fluid. The change in the speed of sound increases with an increase in the applied electric field. By thus varying the speed of sound, one varies the acoustic index of refraction, analogously to varying the index of refraction of an optical lens or prism. In the proposed acoustic devices, this effect would be exploited to control the angles of refraction of acoustic beams, thereby steering the beams and, in the case of lenses, controlling focal lengths.

Implantable power generation system utilizing muscle contractions excited by electrical stimulation.

PubMed

Sahara, Genta; Hijikata, Wataru; Tomioka, Kota; Shinshi, Tadahiko

2016-06-01

An implantable power generation system driven by muscle contractions for supplying power to active implantable medical devices, such as pacemakers and neurostimulators, is proposed. In this system, a muscle is intentionally contracted by an electrical stimulation in accordance with the demands of the active implantable medical device for electrical power. The proposed system, which comprises a small electromagnetic induction generator, electrodes with an electrical circuit for stimulation and a transmission device to convert the linear motion of the muscle contractions into rotational motion for the magneto rotor, generates electrical energy. In an ex vivo demonstration using the gastrocnemius muscle of a toad, which was 28 mm in length and weighed 1.3 g, the electrical energy generated by the prototype exceeded the energy consumed for electrical stimulation, with the net power being 111 µW. It was demonstrated that the proposed implantable power generation system has the potential to replace implantable batteries for active implantable medical devices. © IMechE 2016.

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

PubMed Central

Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo

2018-01-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS2/PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 104 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS2 to PbS. The demonstrated MoS2 heterostructure–based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices. PMID:29770356

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.

PubMed

Wang, Qisheng; Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo; He, Jun

2018-04-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS 2 /PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 10 4 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS 2 to PbS. The demonstrated MoS 2 heterostructure-based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

Research on charging and discharging control strategy for electric vehicles as distributed energy storage devices

NASA Astrophysics Data System (ADS)

Zhang, Min; Yang, Feng; Zhang, Dongqing; Tang, Pengcheng

2018-02-01

A large number of electric vehicles are connected to the family micro grid will affect the operation safety of the power grid and the quality of power. Considering the factors of family micro grid price and electric vehicle as a distributed energy storage device, a two stage optimization model is established, and the improved discrete binary particle swarm optimization algorithm is used to optimize the parameters in the model. The proposed control strategy of electric vehicle charging and discharging is of practical significance for the rational control of electric vehicle as a distributed energy storage device and electric vehicle participating in the peak load regulation of power consumption.

Plasmonic metasurface cavity for simultaneous enhancement of optical electric and magnetic fields in deep subwavelength volume.

PubMed

Hong, Jongwoo; Kim, Sun-Je; Kim, Inki; Yun, Hansik; Mun, Sang-Eun; Rho, Junsuk; Lee, Byoungho

2018-05-14

It has been hard to achieve simultaneous plasmonic enhancement of nanoscale light-matter interactions in terms of both electric and magnetic manners with easily reproducible fabrication method and systematic theoretical design rule. In this paper, a novel concept of a flat nanofocusing device is proposed for simultaneously squeezing both electric and magnetic fields in deep-subwavelength volume (~λ 3 /538) in a large area. Based on the funneled unit cell structures and surface plasmon-assisted coherent interactions between them, the array of rectangular nanocavity connected to a tapered nanoantenna, plasmonic metasurface cavity, is constructed by periodic arrangement of the unit cell. The average enhancement factors of electric and magnetic field intensities reach about 60 and 22 in nanocavities, respectively. The proposed outstanding performance of the device is verified numerically and experimentally. We expect that this work would expand methodologies involving optical near-field manipulations in large areas and related potential applications including nanophotonic sensors, nonlinear responses, and quantum interactions.

Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices

DOEpatents

Chassin, David P [Pasco, WA; Donnelly, Matthew K [Kennewick, WA; Dagle, Jeffery E [Richland, WA

2011-12-06

Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices are described. In one aspect, an electrical power distribution control method includes providing electrical energy from an electrical power distribution system, applying the electrical energy to a load, providing a plurality of different values for a threshold at a plurality of moments in time and corresponding to an electrical characteristic of the electrical energy, and adjusting an amount of the electrical energy applied to the load responsive to an electrical characteristic of the electrical energy triggering one of the values of the threshold at the respective moment in time.

Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices

DOEpatents

Chassin, David P.; Donnelly, Matthew K.; Dagle, Jeffery E.

2006-12-12

Electrical power distribution control methods, electrical energy demand monitoring methods, and power management devices are described. In one aspect, an electrical power distribution control method includes providing electrical energy from an electrical power distribution system, applying the electrical energy to a load, providing a plurality of different values for a threshold at a plurality of moments in time and corresponding to an electrical characteristic of the electrical energy, and adjusting an amount of the electrical energy applied to the load responsive to an electrical characteristic of the electrical energy triggering one of the values of the threshold at the respective moment in time.

Multimaterial 3D Printing of Graphene-Based Electrodes for Electrochemical Energy Storage Using Thermoresponsive Inks.

PubMed

Rocha, Victoria G; García-Tuñón, Esther; Botas, Cristina; Markoulidis, Foivos; Feilden, Ezra; D'Elia, Eleonora; Ni, Na; Shaffer, Milo; Saiz, Eduardo

2017-10-25

The current lifestyles, increasing population, and limited resources result in energy research being at the forefront of worldwide grand challenges, increasing the demand for sustainable and more efficient energy devices. In this context, additive manufacturing brings the possibility of making electrodes and electrical energy storage devices in any desired three-dimensional (3D) shape and dimensions, while preserving the multifunctional properties of the active materials in terms of surface area and conductivity. This paves the way to optimized and more efficient designs for energy devices. Here, we describe how three-dimensional (3D) printing will allow the fabrication of bespoke devices, with complex geometries, tailored to fit specific requirements and applications, by designing water-based thermoresponsive inks to 3D-print different materials in one step, for example, printing the active material precursor (reduced chemically modified graphene (rCMG)) and the current collector (copper) for supercapacitors or anodes for lithium-ion batteries. The formulation of thermoresponsive inks using Pluronic F127 provides an aqueous-based, robust, flexible, and easily upscalable approach. The devices are designed to provide low resistance interface, enhanced electrical properties, mechanical performance, packing of rCMG, and low active material density while facilitating the postprocessing of the multicomponent 3D-printed structures. The electrode materials are selected to match postprocessing conditions. The reduction of the active material (rCMG) and sintering of the current collector (Cu) take place simultaneously. The electrochemical performance of the rCMG-based self-standing binder-free electrode and the two materials coupled rCMG/Cu printed electrode prove the potential of multimaterial printing in energy applications.

Advanced electrical power system technology for the all electric aircraft

NASA Technical Reports Server (NTRS)

Finke, R. C.; Sundberg, G. R.

1983-01-01

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.