Behavior of oxide film at the interface between particles in sintered Al powders by pulse electric-current sintering

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Song, Minghui; Furuya, Kazuo; Noda, Tetsuji

2003-03-01

The microstructure of the bonding interfaces between particles in aluminum (Al) powder sintered specimens by the pulse electric-current sintering (PECS) process was observed, using conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). The behavior of oxide film at the interface between Al particles and its effect on properties of the sintered specimens were investigated. The results showed there were two kinds of bonding interfaces in the sintered specimens, namely, the direct metal/metal bonding and the metal/oxide film layer/metal bonding interface. By increasing the fraction of the direct metal/metal bonding interfaces, the tensile strength of the sintered specimens increased, and the electrical resistivity decreased. By increasing the loading pressure at higher sintering temperatures or increasing the sintering temperature under loading pressure, the breakdown of oxide film was promoted. The broken oxide film debris was dispersed in aluminum metal near the bonding interfaces between particles.

Dehydration process in NaCl solutions under various external electric fields

NASA Astrophysics Data System (ADS)

Kadota, Kazunori; Shimosaka, Atsuko; Shirakawa, Yoshiyuki; Hidaka, Jusuke

2007-06-01

Ionic motions at solid-liquid interface in supersaturated NaCl solutions have been investigated by molecular dynamics (MD) simulation for understanding crystal growth processes. The density profile in the vicinity of the interfaces between NaCl(100) and the supersaturated NaCl solution was calculated. Diffusion coefficients of water molecules in the solution were estimated as a function of distance from the crystal interface. It turned out that the structure and dynamics of the solution in the interfaces was different from those of bulk solution owing to electric fields depending on the surface charge. Therefore, the electric field was applied to the supersaturated solutions and dehydration phenomenon occurring in the process of the crystal growth was discussed. As the electric field increased, it was observed that the Na+ keeping strongly hydration structure broke out by the electric force. In supersaturated concentration, the solution structure is significantly different from that of dilution and has a complicated structure with hydration ions and clusters of NaCl. If the electric fields were applied to the solutions, the breakout of hydration structure was not affected with increasing the supersaturated ratio. This reason is that the cluster structures are destroyed by the electric force. The situation depends on the electric field or crystal surface structure.

Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3.

PubMed

Vlašín, Ondřej; Jarrier, Romain; Arras, Rémi; Calmels, Lionel; Warot-Fonrose, Bénédicte; Marcelot, Cécile; Jamet, Matthieu; Ohresser, Philippe; Scheurer, Fabrice; Hertel, Riccardo; Herranz, Gervasi; Cherifi-Hertel, Salia

2016-03-23

Magnetoelectric coupling at multiferroic interfaces is a promising route toward the nonvolatile electric-field control of magnetization. Here, we use optical measurements to study the static and dynamic variations of the interface magnetization induced by an electric field in Co/PbZr0.2Ti0.8O3 (Co/PZT) bilayers at room temperature. The measurements allow us to identify different coupling mechanisms. We further investigate the local electronic and magnetic structure of the interface by means of transmission electron microscopy, soft X-ray magnetic circular dichroism, and density functional theory to corroborate the coupling mechanism. The measurements demonstrate a mixed linear and quadratic optical response to the electric field, which results from a magneto-electro-optical effect. We propose a decomposition method of the optical signal to discriminate between different components involved in the electric field-induced polarization rotation of the reflected light. This allows us to extract a signal that we can ascribe to interface magnetoelectric coupling. The associated surface magnetization exhibits a clear hysteretic variation of odd symmetry with respect to the electric field and nonzero remanence. The interface coupling is remarkably stable over a wide frequency range (1-50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.

Compensation for electrical converter nonlinearities

DOEpatents

Perisic, Milun; Ransom, Ray M; Kajouke, Lateef A

2013-11-19

Systems and methods are provided for delivering energy from an input interface to an output interface. An electrical system includes an input interface, an output interface, an energy conversion module between the input interface and the output interface, an inductive element between the input interface and the energy conversion module, and a control module. The control module determines a compensated duty cycle control value for operating the energy conversion module to produce a desired voltage at the output interface and operates the energy conversion module to deliver energy to the output interface with a duty cycle that is influenced by the compensated duty cycle control value. The compensated duty cycle control value is influenced by the current through the inductive element and accounts for voltage across the switching elements of the energy conversion module.

A Fully Directional Universal Power Electronic Interface for EV, HEV, and PHEV Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C

2012-01-01

This study focuses on a universal power electronic interface that can be utilized in any type of the electric vehicles, hybrid electric vehicles, and plug-in hybrid electric vehicles (PHEVs). Basically, the proposed converter interfaces the energy storage device of the vehicle with the motor drive and the external charger, in case of PHEVs. The proposed converter is capable of operating in all directions in buck or boost modes with a noninverted output voltage (positive output voltage with respect to the input) and bidirectional power flow.

Electrokinetic motion of a spherical micro particle at an oil-water interface in microchannel.

PubMed

Wang, Chengfa; Li, Mengqi; Song, Yongxin; Pan, Xinxiang; Li, Dongqing

2018-03-01

The electrokinetic motion of a negatively charged spherical particle at an oil-water interface in a microchannel is numerically investigated and analyzed in this paper. A three-dimensional (3D) transient numerical model is developed to simulate the particle electrokinetic motion. The channel wall, the surface of the particle and the oil-water interface are all considered negatively charged. The effects of the direct current (DC) electric field, the zeta potentials of the particle-water interface and the oil-water interface, and the dynamic viscosity ratio of oil to water on the velocity of the particle are studied in this paper. In addition, the influences of the particle size are also discussed. The simulation results show that the micro-particle with a small value of negative zeta potential moves in the same direction of the external electric field. However, if the zeta potential value of the particle-water interface is large enough, the moving direction of the particle is opposite to that of the electric field. The velocity of the particle at the interface increases with the increase in the electric field strength and the particle size, but decreases with the increase in the dynamic viscosity ratio of oil to water, and the absolute value of the negative zeta potentials of both the particle-water interface and the oil-water interface. This work is the first numerical study of the electrokinetic motion of a charged particle at an oil-water interface in a microchannel. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

NASA Astrophysics Data System (ADS)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Efficacy of brain-computer interface-driven neuromuscular electrical stimulation for chronic paresis after stroke.

PubMed

Mukaino, Masahiko; Ono, Takashi; Shindo, Keiichiro; Fujiwara, Toshiyuki; Ota, Tetsuo; Kimura, Akio; Liu, Meigen; Ushiba, Junichi

2014-04-01

Brain computer interface technology is of great interest to researchers as a potential therapeutic measure for people with severe neurological disorders. The aim of this study was to examine the efficacy of brain computer interface, by comparing conventional neuromuscular electrical stimulation and brain computer interface-driven neuromuscular electrical stimulation, using an A-B-A-B withdrawal single-subject design. A 38-year-old male with severe hemiplegia due to a putaminal haemorrhage participated in this study. The design involved 2 epochs. In epoch A, the patient attempted to open his fingers during the application of neuromuscular electrical stimulation, irrespective of his actual brain activity. In epoch B, neuromuscular electrical stimulation was applied only when a significant motor-related cortical potential was observed in the electroencephalogram. The subject initially showed diffuse functional magnetic resonance imaging activation and small electro-encephalogram responses while attempting finger movement. Epoch A was associated with few neurological or clinical signs of improvement. Epoch B, with a brain computer interface, was associated with marked lateralization of electroencephalogram (EEG) and blood oxygenation level dependent responses. Voluntary electromyogram (EMG) activity, with significant EEG-EMG coherence, was also prompted. Clinical improvement in upper-extremity function and muscle tone was observed. These results indicate that self-directed training with a brain computer interface may induce activity- dependent cortical plasticity and promote functional recovery. This preliminary clinical investigation encourages further research using a controlled design.

Influence of Pentacene Interface Layer in ITO/α-NPD/Alq3/Al Organic Light Emitting Diodes by Time-Resolved Electric-Field-Induced Optical Second-Harmonic Generation Measurement.

PubMed

Oda, Yoshiaki; Sadakata, Atsuo; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2016-04-01

By using I-V, EL-V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and a-NPD layers in ITO/α-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I-V and EL-V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the a-NPD and Alq3 layers, which resulted in the relaxation of electric field of a-NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I-V and EL-V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

NASA Technical Reports Server (NTRS)

Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.

Formation of Singularities at the Interface of Liquid Dielectrics in a Horizontal Electric Field in the Presence of Tangential Velocity Discontinuity

NASA Astrophysics Data System (ADS)

Zubarev, N. M.; Kochurin, E. A.

2018-03-01

Nonlinear dynamics of the interface of dielectric liquids under the conditions of suppression of the Kelvin-Helmholz instability by a tangential electric field has been investigated. Two broad classes of exact analytical solutions to the equations of motion describing the evolution of spatially localized and periodic interface perturbations have been found. Both classes of solutions tend to the formation of strong singularities: interface discontinuities with formally infinite amplitudes. The discontinuity sign is determined by the sign of liquid velocity jump at the interface.

Systems and methods for compensating for electrical converter nonlinearities

DOEpatents

Perisic, Milun; Ransom, Ray M.; Kajouke, Lateef A.

2013-06-18

Systems and methods are provided for delivering energy from an input interface to an output interface. An electrical system includes an input interface, an output interface, an energy conversion module coupled between the input interface and the output interface, and a control module. The control module determines a duty cycle control value for operating the energy conversion module to produce a desired voltage at the output interface. The control module determines an input power error at the input interface and adjusts the duty cycle control value in a manner that is influenced by the input power error, resulting in a compensated duty cycle control value. The control module operates switching elements of the energy conversion module to deliver energy to the output interface with a duty cycle that is influenced by the compensated duty cycle control value.

Theory of the formation of the electric double layer at the ion exchange membrane-solution interface.

PubMed

Moya, A A

2015-02-21

This work aims to extend the study of the formation of the electric double layer at the interface defined by a solution and an ion-exchange membrane on the basis of the Nernst-Planck and Poisson equations, including different values of the counter-ion diffusion coefficient and the dielectric constant in the solution and membrane phases. The network simulation method is used to obtain the time evolution of the electric potential, the displacement electric vector, the electric charge density and the ionic concentrations at the interface between a binary electrolyte solution and a cation-exchange membrane with total co-ion exclusion. The numerical results for the temporal evolution of the interfacial electric potential and the surface electric charge are compared with analytical solutions derived in the limit of the shortest times by considering the Poisson equation for a simple cationic diffusion process. The steady-state results are justified from the Gouy-Chapman theory for the diffuse double layer in the limits of similar and high bathing ionic concentrations with respect to the fixed-charge concentration inside the membrane. Interesting new physical insights arise from the interpretation of the process of the formation of the electric double layer at the ion exchange membrane-solution interface on the basis of a membrane model with total co-ion exclusion.

Study on the Pulsed Flashover Characteristics of Solid-Solid Interface in Electrical Devices Poured by Epoxy Resin

NASA Astrophysics Data System (ADS)

Li, Manping; Wu, Kai; Yang, Zhanping; Ding, Man; Liu, Xin; Cheng, Yonghong

2014-09-01

In electrical devices poured by epoxy resin, there are a lot of interfaces between epoxy resin and other solid dielectrics, i.e. solid-solid interfaces. Experiments were carried out to study the flashover characteristics of two typical solid-solid interfaces (epoxy-ceramic and epoxy-PMMA) under steep high-voltage impulse for different electrode systems (coaxial electrodes and finger electrodes) and different types of epoxy resin (neat epoxy resin, polyether modified epoxy resin and polyurethane modified epoxy resin). Results showed that, the flashover of solid-solid interface is similar to the breakdown of solid dielectric, and there are unrecoverable carbonated tracks after flashover. Under the same distance of electrodes, the electric stress of coaxial electrodes is lower than that of finger electrodes; and after the flashover, there are more severe breakdown and larger enhanced surface conductivity at interface for coaxial electrodes, as compared with the case of finger electrode. The dielectric properties are also discussed.

An induced current method for measuring zeta potential of electrolyte solution-air interface.

PubMed

Song, Yongxin; Zhao, Kai; Wang, Junsheng; Wu, Xudong; Pan, Xinxiang; Sun, Yeqing; Li, Dongqing

2014-02-15

This paper reports a novel and very simple method for measuring the zeta potential of electrolyte solution-air interface. When a measuring electrode contacts the electrolyte solution-air interface, an electrical current will be generated due to the potential difference between the electrode-air surface and the electrolyte solution-air interface. The amplitude of the measured electric signal is linearly proportional to this potential difference; and depends only on the zeta potential at the electrolyte solution-air interface, regardless of the types and concentrations of the electrolyte. A correlation between the zeta potential and the measured voltage signal is obtained based on the experimental data. Using this equation, the zeta potential of any electrolyte solution-air interface can be evaluated quickly and easily by inserting an electrode through the electrolyte solution-air interface and measuring the electrical signal amplitude. This method was verified by comparing the obtained results of NaCl, MgCl2 and CaCl2 solutions of different pH values and concentrations with the zeta potential data reported in the published journal papers. Copyright © 2013 Elsevier Inc. All rights reserved.

Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Chen, Bingbing; Shen, Yanjiao; Guo, Jianxin; Liu, Baoting; Dai, Xiuhong; Xu, Ying; Mai, Yaohua

2017-11-01

A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.

Conformable actively multiplexed high-density surface electrode array for brain interfacing

DOEpatents

Rogers, John; Kim, Dae-Hyeong; Litt, Brian; Viventi, Jonathan

2015-01-13

Provided are methods and devices for interfacing with brain tissue, specifically for monitoring and/or actuation of spatio-temporal electrical waveforms. The device is conformable having a high electrode density and high spatial and temporal resolution. A conformable substrate supports a conformable electronic circuit and a barrier layer. Electrodes are positioned to provide electrical contact with a brain tissue. A controller monitors or actuates the electrodes, thereby interfacing with the brain tissue. In an aspect, methods are provided to monitor or actuate spatio-temporal electrical waveform over large brain surface areas by any of the devices disclosed herein.

Directional solidification of a planar interface in the presence of a time-dependent electric current

NASA Technical Reports Server (NTRS)

Brush, L. N.; Coriell, S. R.; Mcfadden, G. B.

1990-01-01

Directional solidification of pure materials and binary alloys with a planar crystal-metal interface in the presence of a time-dependent electric current is considered. For a variety of time-dependent currents, the temperature fields and the interface velocity as functions of time are presented for indium antimonide and bismuth and for the binary alloys germanium-gallium and tin-bismuth. For the alloys, the solid composition is calculated as a function of position. Quantitative predictions are made of the effect of an electrical pulse on the solute distribution in the solidified material.

The influence of an interface electric field on the distribution coefficient of chromium in LiNbO 3

NASA Astrophysics Data System (ADS)

Uda, Satoshi; Tiller, William A.

1992-06-01

The effective solute partitioning of chromium was investigated on single crystals of LiNbO 3 grown by the laser-heated pedestal growth (LHPG) technique. Electric field effects at the interface influence this solute partitioning, leading to an electric field-dependent effective solute distribution coefficient, kE. The LHPG technique made it possible to explore these field effects by controllably changing the growth velocity ( V) and the temperature gradient ( GS, GL) near the interface over a wide range. The electric field generated via the temperature gradient is associated with the thermoelectric power while an additional electric field is growth rate associated via a charge separation effect. By applying the Burton-Prim-Slichter (BPS) theory to our experimental data, we found the phase diagram solute partition coefficient to be k0 ≈ 3.65, while the field-influenced solute partition coefficient ( V = 0) was k' EO ≈ 8.17 at GL ≈ 11500°C/cm. It is theoretically shown that the same considerations can be applied to all ionic partitioning at a solid-liquid interface.

High-performance, polymer-based direct cellular interfaces for electrical stimulation and recording

NASA Astrophysics Data System (ADS)

Kim, Seong-Min; Kim, Nara; Kim, Youngseok; Baik, Min-Seo; Yoo, Minsu; Kim, Dongyoon; Lee, Won-June; Kang, Dong-Hee; Kim, Sohee; Lee, Kwanghee; Yoon, Myung-Han

2018-04-01

Due to the trade-off between their electrical/electrochemical performance and underwater stability, realizing polymer-based, high-performance direct cellular interfaces for electrical stimulation and recording has been very challenging. Herein, we developed transparent and conductive direct cellular interfaces based on a water-stable, high-performance poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) film via solvent-assisted crystallization. The crystallized PEDOT:PSS on a polyethylene terephthalate (PET) substrate exhibited excellent electrical/electrochemical/optical characteristics, long-term underwater stability without film dissolution/delamination, and good viability for primarily cultured cardiomyocytes and neurons over several weeks. Furthermore, the highly crystallized, nanofibrillar PEDOT:PSS networks enabled dramatically enlarged surface areas and electrochemical activities, which were successfully employed to modulate cardiomyocyte beating via direct electrical stimulation. Finally, the high-performance PEDOT:PSS layer was seamlessly incorporated into transparent microelectrode arrays for efficient, real-time recording of cardiomyocyte action potentials with a high signal fidelity. All these results demonstrate the strong potential of crystallized PEDOT:PSS as a crucial component for a variety of versatile bioelectronic interfaces.

Electric Field Control of Interfacial Ferromagnetism in CaMnO3/CaRuO3 Heterostructures

NASA Astrophysics Data System (ADS)

Grutter, A. J.; Kirby, B. J.; Gray, M. T.; Flint, C. L.; Alaan, U. S.; Suzuki, Y.; Borchers, J. A.

2015-07-01

New mechanisms for achieving direct electric field control of ferromagnetism are highly desirable in the development of functional magnetic interfaces. To that end, we have probed the electric field dependence of the emergent ferromagnetic layer at CaRuO3/CaMnO3 interfaces in bilayers fabricated on SrTiO3. Using polarized neutron reflectometry, we are able to detect the ferromagnetic signal arising from a single atomic monolayer of CaMnO3, manifested as a spin asymmetry in the reflectivity. We find that the application of an electric field of 600 kV /m across the bilayer induces a significant increase in this spin asymmetry. Modeling of the reflectivity suggests that this increase corresponds to a transition from canted antiferromagnetism to full ferromagnetic alignment of the Mn4 + ions at the interface. This increase from 1 μB to 2.5 - 3.0 μB per Mn is indicative of a strong magnetoelectric coupling effect, and such direct electric field control of the magnetization at an interface has significant potential for spintronic applications.

Development of hermetic electrical connectors for SSC spool pieces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kountanis, B.; Kalny, L.

1993-05-01

The Superconducting Super Collider ring is about 54 miles (87 km circumference) and primarily includes a series of magnets. Spool piece assemblies are interspaced in the ring at predetermined intervals to provide specific functions such as cryogenic interfaces, vacuum interface, magnet power, magnet power dump, quench heater power, and special instrumentation. Electrical connectors serve as interfaces for instrumentation and quench heater circuits. These connectors have to meet stringent requirements.

The effect of an electric field on the morphological stability of the crystal-melt interface of a binary alloy. III - Weakly nonlinear theory

NASA Technical Reports Server (NTRS)

Wheeler, A. A.; Mcfadden, G. B.; Coriell, S. R.; Hurle, D. T. J.

1990-01-01

The effect of a constant electric current on the crystal-melt interface morphology during directional solidification at constant velocity of a binary alloy is considered. A linear temperature field is assumed, and thermoelectric effects and Joule heating are neglected; electromigration and differing electrical conductivities of crystal and melt are taken into account. A two-dimensional weakly nonlinear analysis is carried out to third order in the interface amplitude, resulting in a cubic amplitude equation that describes whether the bifurcation from the planar state is supercritical or subcritical. For wavelengths corresponding to the most dangerous mode of linear theory, the demarcation between supercritical and subcritical behavior is calculated as a function of processing conditions and material parameters. The bifurcation behavior is a sensitive function of the magnitude and direction of the electric current and of the electrical conductivity ratio.

Visualization of Electrical Field of Electrode Using Voltage-Controlled Fluorescence Release

PubMed Central

Jia, Wenyan; Wu, Jiamin; Gao, Di; Wang, Hao; Sun, Mingui

2016-01-01

In this study we propose an approach to directly visualize electrical current distribution at the electrode-electrolyte interface of a biopotential electrode. High-speed fluorescent microscopic images are acquired when an electric potential is applied across the interface to trigger the release of fluorescent material from the surface of the electrode. These images are analyzed computationally to obtain the distribution of the electric field from the fluorescent intensity of each pixel. Our approach allows direct observation of microscopic electrical current distribution around the electrode. Experiments are conducted to validate the feasibility of the fluorescent imaging method. PMID:27253615

Electric field induced self-assembly of monolayers of gold nanoparticles for surface enhanced Raman scattering applications

NASA Astrophysics Data System (ADS)

Das, Suchandra; Musunuri, Naga; Kucheryavy, Pavel; Lockard, Jenny; Fischer, Ian; Singh, Pushpendra; New Jersey Institute of Technology Collaboration; Rutgers University Newark Collaboration

2017-11-01

We present a technique that uses an electric field in the direction normal to the interface for self-assembling monolayers of gold nanoparticles on fluid-liquid interfaces and freezing these monolayers onto the surface of a flexible thin film. The electric field gives rise to dipole-dipole and capillary forces which cause the particles to arrange in a triangular pattern. The technique involves assembling the monolayer on the interface between a UV-curable resin and another fluid by applying an electric field, and then curing the resin by applying UV light. The monolayer becomes embedded on the surface of the solidified resin film. We are using these films for surface enhanced Raman scattering (SERS) applications. Initial measurements indicate improved performance over commercially available SERS substrates.

Single-Crystal Material on Non-Single-Crystalline Substrate

DTIC Science & Technology

1999-02-01

point frit or solder glass can be deposited on a surface and bonded to a second surface using pressure and temperature. A sodium silicate material...interface. A metal or silicide at the bonding interface may be advantageous fQr electrical current conduction across the interface. 10 Applications...substrate, or a silicide or metal to aid bonding and vertical electrical current conduction. In some cases, it is difficult to polish the non- single

Developing and Evaluating a Flexible Wireless Microcoil Array Based Integrated Interface for Epidural Cortical Stimulation.

PubMed

Wang, Xing; Chaudhry, Sharjeel A; Hou, Wensheng; Jia, Xiaofeng

2017-02-05

Stroke leads to serious long-term disability. Electrical epidural cortical stimulation has made significant improvements in stroke rehabilitation therapy. We developed a preliminary wireless implantable passive interface, which consists of a stimulating surface electrode, receiving coil, and single flexible passive demodulated circuit printed by flexible printed circuit (FPC) technique and output pulse voltage stimulus by inductively coupling an external circuit. The wireless implantable board was implanted in cats' unilateral epidural space for electrical stimulation of the primary visual cortex (V1) while the evoked responses were recorded on the contralateral V1 using a needle electrode. The wireless implantable board output stable monophasic voltage stimuli. The amplitude of the monophasic voltage output could be adjusted by controlling the voltage of the transmitter circuit within a range of 5-20 V. In acute experiment, cortico-cortical evoked potential (CCEP) response was recorded on the contralateral V1. The amplitude of N2 in CCEP was modulated by adjusting the stimulation intensity of the wireless interface. These results demonstrated that a wireless interface based on a microcoil array can offer a valuable tool for researchers to explore electrical stimulation in research and the dura mater-electrode interface can effectively transmit electrical stimulation.

Modifying the Interface Edge to Control the Electrical Transport Properties of Nanocontacts to Nanowires.

PubMed

Lord, Alex M; Ramasse, Quentin M; Kepaptsoglou, Despoina M; Evans, Jonathan E; Davies, Philip R; Ward, Michael B; Wilks, Steve P

2017-02-08

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties.

Formation of curvature singularities on the interface between dielectric liquids in a strong vertical electric field.

PubMed

Kochurin, Evgeny A; Zubarev, Nikolay M; Zubareva, Olga V

2013-08-01

The nonlinear dynamics of the interface between two deep dielectric fluids in the presence of a vertical electric field is studied. We consider the limit of a strong external electric field where electrostatic forces dominate over gravitational and capillary forces. The nonlinear integrodifferential equations for the interface motion are derived under the assumption of small interfacial slopes. It is shown in the framework of these equations that, in the generic case, the instability development leads to the formation of root singularities at the interface in a finite time. The interfacial curvature becomes infinite at singular points, while the slope angles remain relatively small. The curvature is negative in the vicinity of singularities if the ratio of the permittivities of the fluids exceeds the inverse ratio of their densities, and it is positive in the opposite case (we consider that the lower fluid is heavier than the upper one). In the intermediate case, the interface evolution equations describe the formation and sharpening of dimples at the interface. The results obtained are applicable for the description of the instability of the interface between two magnetic fluids in a vertical magnetic field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-Omore » bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.« less

Modifying Surface Energy of Graphene via Plasma-Based Chemical Functionalization to Tune Thermal and Electrical Transport at Metal Interfaces.

PubMed

Foley, Brian M; Hernández, Sandra C; Duda, John C; Robinson, Jeremy T; Walton, Scott G; Hopkins, Patrick E

2015-08-12

The high mobility exhibited by both supported and suspended graphene, as well as its large in-plane thermal conductivity, has generated much excitement across a variety of applications. As exciting as these properties are, one of the principal issues inhibiting the development of graphene technologies pertains to difficulties in engineering high-quality metal contacts on graphene. As device dimensions decrease, the thermal and electrical resistance at the metal/graphene interface plays a dominant role in degrading overall performance. Here we demonstrate the use of a low energy, electron-beam plasma to functionalize graphene with oxygen, fluorine, and nitrogen groups, as a method to tune the thermal and electrical transport properties across gold-single layer graphene (Au/SLG) interfaces. We find that while oxygen and nitrogen groups improve the thermal boundary conductance (hK) at the interface, their presence impairs electrical transport leading to increased contact resistance (ρC). Conversely, functionalization with fluorine has no impact on hK, yet ρC decreases with increasing coverage densities. These findings indicate exciting possibilities using plasma-based chemical functionalization to tailor the thermal and electrical transport properties of metal/2D material contacts.

Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

NASA Astrophysics Data System (ADS)

Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

1999-02-01

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

Temperature dependent transport characteristics of graphene/n-Si diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, S.; Ruiter, R.; Zomer, P. J.

2014-12-28

Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<10{sup −10} A) and rectification of more than 10{sup 6}. We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for themore » CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Güttler.« less

SEPS mission and system integration/interface requirements for the space transportation system. [Solar Electric Propulsion System

NASA Technical Reports Server (NTRS)

Cork, M. J.; Barnett, P. M.; Shaffer, J., Jr.; Doran, B. J.

1979-01-01

Earth escape mission requirements on Solar Electric Propulsion System (SEPS), and the interface definition and planned integration between SEPS, user spacecraft, and other elements of the STS. Emphasis is placed on the Comet rendezvous mission, scheduled to be the first SEPS user. Interactive SEPS interface characteristics with spacecraft and mission, as well as the multiple organizations and inter-related development schedules required to integrate the SEPS with spacecraft and STS, require early attention to definition of interfaces in order to assure a successful path to the first SEPS launch in July 1985

A rotating electrical transfer device

NASA Technical Reports Server (NTRS)

Porter, R. S.

1985-01-01

The design, development, and performance characteristics of two roll ring configurations - a roll ring being a device used in transferring electrical energy across a continuously rotating or oscillating interface through one or more flexible rolling contacts, or flexures are described. Emphasis is placed on the design problems and solutions encountered during development in the areas of flexure fatigue, contact electroplating, electrical noise, and control of interface geometry. Also, the present status of each configuration is summarized.

Electro-optic response in thin smectic C* film with chevron structures

NASA Astrophysics Data System (ADS)

Kudreyko, Aleksey A.; Migranov, Nail G.; Migranova, Dana N.

2016-12-01

The effects in electrostatic models of chevron surface-stabilized ferroelectric liquid crystals are investigated through numerical modeling. To study smectic C* director distribution within the cell, we consider two nonlinear approaches: the chevron interface does not interplay with the electric field; the electric field interplays with the chevron interface. The obtained results of the director field distribution are compared with the earlier linearized studies. We find that whether or not the electric field interplays with the chevron interface, the electro-optic response requires a generalized approach for its description. The threshold electric field, which is necessary for switching between two stable director states in the chevron cell is evaluated. This study suggests that, in many cases of practical interest, electro-optic response to the electric field and the threshold electric field can be precisely estimated. We argue that, beside being numerically efficient, our approach provides a convenient and a novel standpoint for looking at the electro-optic response problem. Project supported by the Russian Foundation for Basic Research (RFBR) (Grant Nos. 16-32-00043 and 14-02-97026).

Computational Interpretation of the Relation Between Electric Field and the Applied Current for Cathodic Protection Under Different Conductivity Environments

NASA Astrophysics Data System (ADS)

Kim, Yong-Sang; Ko, Sang-Jin; Lee, Sangkyu; Kim, Jung-Gu

2018-03-01

An interpretation of the relation between the electric field and the applied current for cathodic protection is investigated using a boundary element method simulation. Also, a conductivity-difference environment is set for the interface influence. The variation of the potential distribution is increased with the increase of the applied current and the conductivity difference due to the rejection of the current at the interface. In the case of the electric field, the tendencies of the increasing rate and the applied currents are similar, but the interface influence is different according to the directional component and field type (decrease of E z and increases of E x and E y) due to the directional difference between the electric fields. Also, the change tendencies of the electric fields versus the applied current plots are affected by the polarization curve tendency regarding the polarization type (activation and concentration polarizations in the oxygen-reduction and hydrogen-reduction reactions). This study shows that the underwater electric signature is determined by the polarization behavior of the materials.

Microstructure Evolution and Failure Analysis of an Aluminum-Copper Cathode Conductive Head Produced by Explosive Welding

NASA Astrophysics Data System (ADS)

Wei, Yanni; Luo, Yongguang; Qu, Hongtao; Zou, Juntao; Liang, Shuhua

2017-12-01

In this paper, microstructure evolution and failure analysis of the aluminum-copper interface of cathode conductive heads during their use were studied. The interface morphologies, compositions, conductivity and mechanical properties were investigated and analyzed. Obvious corrosion was found on the surface of the contact interface, which was more prevalent on an Al matrix. The crack increased sharply in the local metallurgical bonding areas on the interface, with the compound volume having no significant change. The phase transformation occurred on the interface during use, which was investigated using the elemental composition and x-ray diffraction pattern. The microhardness near the interface increased accordingly. An obvious electrical conductivity decrease appeared on the Al/Cu interface of the cathode conductive head after use over a specific time interval. Therefore, the deterioration of the microstructures and corrosion are the primary factors that affect the electrical conductivity and effective bonding, which will lead to eventual failure.

Built-in Electric Field Induced Mechanical Property Change at the Lanthanum Nickelate/Nb-doped Strontium Titanate Interfaces

DOE PAGES

Chien, TeYu; Liu, Jian; Yost, Andrew J.; ...

2016-01-08

The interactions between electric field and the mechanical properties of materials are important for the applications of microelectromechanical and nanoelectromechanical systems, but relatively unexplored for nanoscale materials. Here, we observe an apparent correlation between the change of the fractured topography of Nb-doped SrTiO 3 (Nb:STO) within the presence of a built-in electric field resulting from the Schottky contact at the interface of a metallic LaNiO 3 thin film utilizing cross-sectional scanning tunneling microscopy and spectroscopy. The change of the inter-atomic bond length mechanism is argued to be the most plausible origin. This picture is supported by the strong-electric-field-dependent permittivity inmore » STO and the existence of the dielectric dead layer at the interfaces of STO with metallic films. Finally, these results provided direct evidence and a possible mechanism for the interplay between the electric field and the mechanical properties on the nanoscale for perovskite materials.« less

Effect of toughened epoxy resin on partial discharge at solid-solid interface

NASA Astrophysics Data System (ADS)

Li, Manping; Wu, Kai; Zhang, Zhao; Cheng, Yonghong

2017-02-01

A series of solid-solid interfaces, consisting of ceramic-epoxy resin interface samples with a tip-plate electrode, were investigated by performing partial discharge tests and real-time electrical tree observations. A toughening agent was added to the epoxy resin at different ratios for comparison. The impact strength, differential scanning calorimetry (DSC) and dielectric properties of the cured compositions and ceramic were tested. The electric field strength at the tip was calculated based on Maxwell’s theory. The test results show that the addition of a toughener can improve the impact strength of epoxy resin but it decreases the partial discharge inception voltage (PDIV) of the interface sample. At the same time, toughening leads to complex branches of the electrical tree. The simulation result suggests that this reduction of the PDIV cannot be explained by a change of permittivity due to the addition of a toughening agent. The microstructural change caused by toughening was considered to be the key factor for lower PDIV and complex electrical tree branches. Supported by China Academy of Engineering Physics (Project 2014B05005).

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

NASA Astrophysics Data System (ADS)

Jung, A.; Zhang, Y.; Arroyo Rojas Dasilva, Y.; Isa, F.; von Känel, H.

2018-02-01

We study covalent bonds between p-doped Si wafers (resistivity ˜10 Ω cm) fabricated on a recently developed 200 mm high-vacuum system. Oxide- and void free interfaces were obtained by argon (Ar) or neon (Ne) sputtering prior to wafer bonding at room temperature. The influence of the sputter induced amorphous Si layer at the bonding interface on the electrical behavior is accessed with temperature-dependent current-voltage measurements. In as-bonded structures, charge transport is impeded by a potential barrier of 0.7 V at the interface with thermionic emission being the dominant charge transport mechanism. Current-voltage characteristics are found to be asymmetric which can tentatively be attributed to electric dipole formation at the interface as a result of the time delay between the surface preparation of the two bonding partners. Electron beam induced current measurements confirm the corresponding asymmetric double Schottky barrier like band-alignment. Moreover, we demonstrate that defect annihilation at a low temperature of 400 °C increases the electrical conductivity by up to three orders of magnitude despite the lack of recrystallization of the amorphous layer. This effect is found to be more pronounced for Ne sputtered surfaces which is attributed to the lighter atomic mass compared to Ar, inducing weaker lattice distortions during the sputtering.

Concurrent ionic migration and electronic effects at the memristive TiO x /La1/3Ca2/3MnO3-x interface

NASA Astrophysics Data System (ADS)

Román Acevedo, W.; Ferreyra, C.; Sánchez, M. J.; Acha, C.; Gay, R.; Rubi, D.

2018-03-01

The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiO x /La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiO x and La1/3Ca2/3MnO3-x , respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.

Effects of Force Fields on Interface Dynamics, in view of Two-Phase Heat Transfer Enhancement and Phase Management for Space Applications

NASA Astrophysics Data System (ADS)

Di Marco, P.; Saccone, G.

2017-11-01

On earth, gravity barely influences the dynamics of interfaces. For what concerns bubbles, buoyancy governs the dynamics of boiling mechanism and thus affects boiling heat transfer capacity. While, for droplets, the coupled effects of wettability and gravity affects interface exchanges. In space, in the lack of gravity, rules are changed and new phenomena come into play. The present work is aimed to study the effects of electric field on the shape and behaviour of bubbles and droplets in order to understand how to handle microgravity applications; in particular, the replacement of gravity with electric field and their coupled effects are evaluated. The experiments spread over different setups, gravity conditions, working fluids, interface conditions. Droplets and bubbles have been analysed with and without electric field, with and without (adiabatic) heat and mass transfer across the interface. Furthermore, the results of the 4 ESA Parabolic Flight Campaigns (PFC 58, 60, 64 & 66), for adiabatic bubbles, adiabatic droplets and evaporating droplets, will be summarized, discussed, and compared with the ground tests.

Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)

NASA Astrophysics Data System (ADS)

Lüpke, Felix; Just, Sven; Bihlmayer, Gustav; Lanius, Martin; Luysberg, Martina; Doležal, Jiří; Neumann, Elmar; Cherepanov, Vasily; Ošt'ádal, Ivan; Mussler, Gregor; Grützmacher, Detlev; Voigtländer, Bert

2017-07-01

We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1 ×1 ) surface, we find Te to form a Te/Si(111)-(1 ×1 ) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1 ×1 ) interface conductivity of σ2D Te=2.6 (5 ) ×10-7S /□ , which is small compared to the typical conductivity of topological surface states.

Anomalously deep polarization in SrTiO3 (001) interfaced with an epitaxial ultrathin manganite film

DOE PAGES

Wang, Zhen; Tao, Jing; Yu, Liping; ...

2016-10-17

Using atomically-resolved imaging and spectroscopy, we reveal a remarkably deep polarization in non-ferroelectric SrTiO 3 near its interface with an ultrathin nonmetallic film of La 2/3Sr 1/3MnO 3. Electron holography shows an electric field near the interface in SrTiO 3, yielding a surprising spontaneous polarization density of ~ 21 μC/cm 2. Combining the experimental results with first principles calculations, we propose that the observed deep polarization is induced by the electric field originating from oxygen vacancies that extend beyond a dozen unit-cells from the interface, thus providing important evidence of the role of defects in the emergent interface properties ofmore » transition metal oxides.« less

Coherently coupled ZnO and VO2 interface studied by photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Herng, T. S.; Saha, Surajit; Nina, Bao; Annadi, A.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Ariando; Ding, J.; Venkatesan, T.

2012-06-01

We have investigated the photoluminescence and electrical properties of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire across the phase transition of VO2. The band edge and defect luminescence of the ZnO overlayer exhibit hysteresis in opposite directions induced by the phase transition of VO2. Concomitantly the phase transition of VO2 was seen to induce defects in the ZnO layer. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces in situ and also for novel device application.

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

One-dimensional pressure transfer models for acoustic-electric transmission channels

NASA Astrophysics Data System (ADS)

Wilt, K. R.; Lawry, T. J.; Scarton, H. A.; Saulnier, G. J.

2015-09-01

A method for modeling piezoelectric-based ultrasonic acoustic-electric power and data transmission channels is presented. These channels employ piezoelectric disk transducers to convey signals across a series of physical layers using ultrasonic waves. This model decomposes the mechanical pathway of the signal into individual ultrasonic propagation layers which are generally independent of the layer's adjacent domains. Each layer is represented by a two-by-two traveling pressure wave transfer matrix which relates the forward and reverse pressure waves on one side of the layer to the pressure waves on the opposite face, where each face is assumed to be in contact with a domain of arbitrary reference acoustic impedance. A rigorous implementation of ultrasonic beam spreading is introduced and implemented within applicable domains. Compatible pressure-wave models for piezoelectric transducers are given, which relate the electric voltage and current interface of the transducer to the pressure waves on one mechanical interface while also allowing for passive acoustic loading of the secondary mechanical interface. It is also shown that the piezoelectric model's electrical interface is compatible with transmission line parameters (ABCD-parameters), allowing for connection of electronic components and networks. The model is shown to be capable of reproducing the behavior of realistic physical channels.

The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

2010-01-01

Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

DOE PAGES

Cousineau, Justine Emily; Bennion, Kevin S.; Chieduko, Victor; ...

2018-05-08

Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. Furthermore, the results were compared to currently available modelsmore » for contact resistance, and one model was adapted for prediction of TCR in future motor designs.« less

Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cousineau, Justine Emily; Bennion, Kevin S.; Chieduko, Victor

Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. Furthermore, the results were compared to currently available modelsmore » for contact resistance, and one model was adapted for prediction of TCR in future motor designs.« less

Tunable Magneto-electric Subbands in Oxide Electron Waveguides

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Annadi, Anil; Lu, Shicheng; Lee, Hyungwoo; Lee, Jungwoo; Eom, Chang-Beom; Huang, Mengchen; Irvin, Patrick; Levy, Jeremy

Strontium titanate-based complex-oxide interfaces hold great promise for exploring new correlated electron physics and applications in quantum technologies. Previous reports show electron mobility can be greatly enhanced in 1D, while the 2D interface can contain 1D channels due to the presence of ferroelastic domains. In addition, carrier density measurements at the 2D interface by Shubnikov-de Haas (SdH) oscillations and Hall effect reveal a large discrepancy. Here we fabricate quasi-1D electron waveguides at the LaAlO3/SrTiO3 (LAO/STO) interface to locally probe the interface. The conductance of the waveguides is fully quantized, and the corresponding magneto-electric subbands can be depopulated by increasing the magnetic field. The 2D carrier densities (1012 cm-2) extracted from magnetic depopulation are consistent with measurements by SdH oscillations at the 2D interface. Our results show that magneto-electric subbands of quasi-1D electron waveguides can reproduce known SdH signatures without discrepancies in electron density, and suggest that 2D SdH measurements may also arise from quasi-1D channels. We gratefully acknowledge financial support from AFOSR (FA9550-12-1- 0057 (JL) and FA9550-12-1-0342 (CBE)), ONR N00014-15-1-2847 (JL), and NSF DMR-1234096 (CBE).

Electronic functions of solid-to-liquid interfaces of organic semiconductor crystals and ionic liquid

NASA Astrophysics Data System (ADS)

Takeya, J.

2008-10-01

The environment of surface electrons at 'solid-to-liquid' interfaces is somewhat extreme, subjected to intense local electric fields or harsh chemical pressures that high-density ionic charge or polarization of mobile molecules create. In this proceedings, we argue functions of electronic carriers generated at the surface of organic semiconductor crystals in response to the local electric fields in the very vicinity of the interface to ionic liquid. The ionic liquids (ILs), or room temperature molten salts, are gaining considerable interest in the recent decade at the prospect of nonvolatile 'green solvents', with the development of chemically stable and nontoxic compounds. Moreover, such materials are also applied to electrolytes for lithium ion batteries and electric double-layer (EDL) capacitors. Our present solid-to-liquid interfaces of rubrene single crystals and ionic liquids work as fast-switching organic field-effect transistors (OFETs) with the highest transconductance, i.e. the most efficient response of the output current to the input voltage, among the OFETs ever built.

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Film bonded fuel cell interface configuration

DOEpatents

Kaufman, Arthur; Terry, Peter L.

1985-01-01

An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. A multi-layer arrangement for the interface provides bridging electrical contact with a hot-pressed resin filling the void space.

Process for making film-bonded fuel cell interfaces

DOEpatents

Kaufman, Arthur; Terry, Peter L.

1990-07-03

An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. A multi-layer arrangement for the interface provides bridging electrical contact with a hot-pressed resin filling the void space.

Effect of cholesterol on electrostatics in lipid-protein films of a pulmonary surfactant.

PubMed

Finot, Eric; Leonenko, Yuri; Moores, Brad; Eng, Lukas; Amrein, Matthias; Leonenko, Zoya

2010-02-02

We report the changes in the electrical properties of the lipid-protein film of pulmonary surfactant produced by excess cholesterol. Pulmonary surfactant (PS) is a complex lipid-protein mixture that forms a molecular film at the interface of the lung's epithelia. The defined molecular arrangement of the lipids and proteins of the surfactant film gives rise to the locally highly variable electrical surface potential of the interface, which becomes considerably altered in the presence of cholesterol. With frequency modulation Kelvin probe force microscopy (FM-KPFM) and force measurements, complemented by theoretical analysis, we showed that excess cholesterol significantly changes the electric field around a PS film because of the presence of nanometer-sized electrostatic domains and affects the electrostatic interaction of an AFM probe with a PS film. These changes in the local electrical field would greatly alter the interaction of the surfactant film with charged species and would immediately impact the manner in which inhaled (often charged) airborne nanoparticles and fibers might interact with the lung interface.

Evaluation of a Conductive Elastomer Seal for Spacecraft

NASA Technical Reports Server (NTRS)

Daniels, C. C.; Mather, J. L.; Oravec, H. A.; Dunlap, P. H., Jr.

2016-01-01

An electrically conductive elastomer was evaluated as a material candidate for a spacecraft seal. The elastomer used electrically conductive constituents as a means to reduce the resistance between mating interfaces of a sealed joint to meet spacecraft electrical bonding requirements. The compound's outgassing levels were compared against published NASA requirements. The compound was formed into a hollow O-ring seal and its compression set was measured. The O-ring seal was placed into an interface and the electrical resistance and leak rate were quantified. The amount of force required to fully compress the test article in the sealing interface and the force needed to separate the joint were also measured. The outgassing and resistance measurements were below the maximum allowable levels. The room temperature compression set and leak rates were fairly high when compared against other typical spacecraft seal materials, but were not excessive. The compression and adhesion forces were desirably low. Overall, the performance of the elastomer compound was sufficient to be considered for future spacecraft seal applications.

Electromigration effect upon the Sn-0.7 wt% Cu/Ni and Sn-3.5 wt% Ag/Ni interfacial reactions

NASA Astrophysics Data System (ADS)

Chen, Chih-ming; Chen, Sinn-wen

2001-08-01

This study investigates the effect of electromigration upon the interfacial reactions between the promising lead-free solders, Sn-Cu and Sn-Ag, with Ni substrate. Sandwich-type reaction couples, Sn-0.7 wt% Cu/Ni/Sn-0.7 wt% Cu and Sn-3.5 wt% Ag/Ni/Sn-3.5 wt% Ag, were reacted at 160, 180, and 200 °C for various lengths of time with and without the passage of electric currents. Without passage of electric currents through the couples, only one intermetallic compound Ni3Sn4 with ˜7 at. % Cu solubility was found at both interfaces of the Sn-0.7 wt% Cu/Ni couples. With the passage of an electric current of 500 A/cm2 density, the Cu6Sn5 phase was formed at the solder/Ni interface besides the Ni3Sn4 phase. Similar to those without the passage of electric currents, only the Ni3Sn4 phase was found at the Ni/solder interface. Directions of movement of electrons, Sn, and Cu atoms are the same at the solder/Ni interface, and the growth rates of the intermetallic layers were enhanced. At the Ni/solder interface, the electrons flow in the opposite direction of the Sn and Cu movement, and the growth rates of the intermetallic layers were retarded. Only the Ni3Sn4 phase was formed from the Sn-3.5 wt% Ag/Ni interfacial reaction with and without the passage of electric currents. Similar to the Sn-0.7 wt% Cu/Ni system, the movement of electrons enhances or retards the growth rates of the intermetallic layers at the solder/Ni and Ni/solder interfaces, respectively. Calculation results show the apparent effective charge za* decreases in magnitude with raising temperatures, which indicates the electromigration effect becomes insignificant at higher temperatures.

Systems and methods for providing power to a load based upon a control strategy

DOEpatents

Perisic, Milun; Lawrence, Christopher P; Ransom, Ray M; Kajouke, Lateef A

2014-11-04

Systems and methods are provided for an electrical system. The electrical system, for example, includes a first load, an interface configured to receive a voltage from a voltage source, and a controller configured to receive the voltage through the interface and to provide a voltage and current to the first load. The controller may be further configured to, receive information on a second load electrically connected to the voltage source, determine an amount of reactive current to return to the voltage source such that a current drawn by the electrical system and the second load from the voltage source is substantially real, and provide the determined reactive current to the voltage source.

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Kampert, E.; Law, J.; Jmerik, V. N.; Paturi, P.; Wang, X.; Yoshikawa, A.; Ivanov, S. V.

2018-01-01

Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions.

Polyhydroxyalkanoate/carbon nanotube nanocomposites: flexible electrically conducting elastomers for neural applications.

PubMed

Vallejo-Giraldo, Catalina; Pugliese, Eugenia; Larrañaga, Aitor; Fernandez-Yague, Marc A; Britton, James J; Trotier, Alexandre; Tadayyon, Ghazal; Kelly, Adriona; Rago, Ilaria; Sarasua, Jose-Ramon; Dowd, Eilís; Quinlan, Leo R; Pandit, Abhay; Biggs, Manus Jp

2016-10-01

Medium chain length-polyhydroxyalkanoate/multi-walled carbon nanotube (MWCNTs) nanocomposites with a range of mechanical and electrochemical properties were fabricated via assisted dispersion and solvent casting, and their suitability as neural interface biomaterials was investigated. Mechanical and electrical properties of medium chain length-polyhydroxyalkanoate/MWCNTs nanocomposite films were evaluated by tensile test and electrical impedance spectroscopy, respectively. Primary rat mesencephalic cells were seeded on the composites and quantitative immunostaining of relevant neural biomarkers, and electrical stimulation studies were performed. Incorporation of MWCNTs to the polymeric matrix modulated the mechanical and electrical properties of resulting composites, and promoted differential cell viability, morphology and function as a function of MWCNT concentration. This study demonstrates the feasibility of a green thermoplastic MWCNTs nanocomposite for potential use in neural interfacing applications.

Surface and interface sciences of Li-ion batteries. -Research progress in electrode-electrolyte interface-

NASA Astrophysics Data System (ADS)

Minato, Taketoshi; Abe, Takeshi

2017-12-01

The application potential of Li-ion batteries is growing as demand increases in different fields at various stages in energy systems, in addition to their conventional role as power sources for portable devices. In particular, applications in electric vehicles and renewable energy storage are increasing for Li-ion batteries. For these applications, improvements in battery performance are necessary. The Li-ion battery produces and stores electric power from the electrochemical redox reactions between the electrode materials. The interface between the electrodes and electrolyte strongly affects the battery performance because the charge transfer causing the electrode redox reaction begins at this interface. Understanding of the surface structure, electronic structure, and chemical reactions at the electrode-electrolyte interface is necessary to improve battery performance. However, the interface is located between the electrode and electrolyte materials, hindering the experimental analysis of the interface; thus, the physical properties and chemical processes have remained poorly understood until recently. Investigations of the physical properties and chemical processes at the interface have been performed using advanced surface science techniques. In this review, current knowledge and future research prospects regarding the electrode-electrolyte interface are described for the further development of Li-ion batteries.

Electrical characterization of plasma-grown oxides on gallium arsenide

NASA Technical Reports Server (NTRS)

Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

1985-01-01

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Interface-Free Area-Scalable Self-Powered Electroluminescent System Driven by Triboelectric Generator

PubMed Central

Yan Wei, Xiao; Kuang, Shuang Yang; Yang Li, Hua; Pan, Caofeng; Zhu, Guang; Wang, Zhong Lin

2015-01-01

Self-powered system that is interface-free is greatly desired for area-scalable application. Here we report a self-powered electroluminescent system that consists of a triboelectric generator (TEG) and a thin-film electroluminescent (TFEL) lamp. The TEG provides high-voltage alternating electric output, which fits in well with the needs of the TFEL lamp. Induced charges pumped onto the lamp by the TEG generate an electric field that is sufficient to excite luminescence without an electrical interface circuit. Through rational serial connection of multiple TFEL lamps, effective and area-scalable luminescence is realized. It is demonstrated that multiple types of TEGs are applicable to the self-powered system, indicating that the system can make use of diverse mechanical sources and thus has potentially broad applications in illumination, display, entertainment, indication, surveillance and many others. PMID:26338365

Battery electric vehicles - implications for the driver interface.

PubMed

Neumann, Isabel; Krems, Josef F

2016-03-01

The current study examines the human-machine interface of a battery electric vehicle (BEV) from a user-perspective, focussing on the evaluation of BEV-specific displays, the relevance of provided information and challenges for drivers due to the concept of electricity in a road vehicle. A sample of 40 users drove a BEV for 6 months. Data were gathered at three points of data collection. Participants perceived the BEV-specific displays as only moderately reliable and helpful for estimating the displayed parameters. This was even less the case after driving the BEV for 3 months. A taxonomy of user requirements was compiled revealing the need for improved and additional information, especially regarding energy consumption and efficiency. Drivers had difficulty understanding electrical units and the energy consumption of the BEV. On the background of general principles for display design, results provide implications how to display relevant information and how to facilitate drivers' understanding of energy consumption in BEVs. Practitioner Summary: Battery electric vehicle (BEV) displays need to incorporate new information. A taxonomy of user requirements was compiled revealing the need for improved and additional information in the BEV interface. Furthermore, drivers had trouble understanding electrical units and energy consumption; therefore, appropriate assistance is required. Design principles which are specifically important in the BEV context are discussed.

Quantum computing with acceptor spins in silicon.

PubMed

Salfi, Joe; Tong, Mengyang; Rogge, Sven; Culcer, Dimitrie

2016-06-17

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tooker, Angela C.; Felix, Sarah H.; Pannu, Satinderpall S.

A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

Instrument interface description for NOAA 2000 instruments with European morning spacecraft and/or NOAA-OPQ spacecraft

NASA Technical Reports Server (NTRS)

1993-01-01

The purpose is to describe at a high level the common interface provisions and constraints placed on the NOAA-2000 instruments and the interfacing spacecraft elements in the following areas: electrical interface, mechanical interface, thermal interface, magnetic interface, electromagnetic compatibility, structural/mechanical environmental interface, contamination control, and the ionizing radiation environment. The requirements reflect the fact that these instruments must be compatible with a number of different polar orbiting satellite vehicles including the NOAA-OPQ satellites and the EUMETSAT METOP satellites.

International interface design for Space Station Freedom - Challenges and solutions

NASA Technical Reports Server (NTRS)

Mayo, Richard E.; Bolton, Gordon R.; Laurini, Daniele

1988-01-01

The definition of interfaces for the International Space Station is discussed, with a focus on negotiations between NASA and ESA. The program organization and division of responsibilities for the Space Station are outlined; the basic features of physical and functional interfaces are described; and particular attention is given to the interface management and documentation procedures, architectural control elements, interface implementation and verification, and examples of Columbus interface solutions (including mechanical, ECLSS, thermal-control, electrical, data-management, standardized user, and software interfaces). Diagrams, drawings, graphs, and tables listing interface types are provided.

Water Density in the Electric Double Layer at the Insulator/Electrolyte Solution Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhonov,A.

I studied the spatial structure of the thick transition region between n-hexane and a colloidal solution of 7-nm silica particles by X-ray reflectivity and grazing incidence small-angle scattering. The interfacial structure is discussed in terms of a semiquantitative interface model wherein the potential gradient at the n-hexane/sol interface reflects the difference in the potentials of 'image forces' between the cationic Na{sup +} and anions (nanoparticles) and the specific adsorption of surface charge at the interface between the adsorbed layer and the solution, as well as at the interface between the adsorbed layer and n-hexane. The X-ray scattering data revealed thatmore » the average density of water in the field {approx}10{sup 9}-10{sup 10} V/m of the electrical double layer at the hexane/silica sol interface is the same as, or only few percent higher (1-7%) than, its density under normal conditions.« less

Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

NASA Astrophysics Data System (ADS)

Luo, Xiangcheng

Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic/plastic deformation, oxidation, strain hardening, passive layer damage, fracture, etc.) with the electrical contact resistance, which was measured in real time for contacts under dynamic compression, thus allowing both reversible and irreversible changes to be observed. The materials studied included metals (carbon steel, stainless steel, aluminum and copper), carbon fiber reinforced polymer-matrix composite (nylon-6), ceramic (mortar) and graphite, due to their relevance to fastening, concrete structures, electric brushes and electrical pressure contacts.

Depth-Dependent Defect Studies Using Coherent Acoustic Phonons

DTIC Science & Technology

2014-09-29

using CAP waves as an active moving interface to induce local changes in electric, acoustic , and optical properties. This is able to generate ultrafast...the elastic strain component [6]. b) Modification of the crystal lattice due to transient strain caused by the coherent acoustic phonon wave . The...opto-electronic properties of materials. We are also using CAP waves as an active moving interface to induce local changes in electric, acoustic , and

High-temperature geothermal cableheads

NASA Astrophysics Data System (ADS)

Coquat, J. A.; Eifert, R. W.

1981-11-01

Two high temperature, corrosion resistant logging cable heads which use metal seals and a stable fluid to achieve proper electrical terminations and cable sonde interfacings are described. A tensile bar provides a calibrated yield point, and a cone assembly anchors the cable armor to the head. Electrical problems of the sort generally ascribable to the cable sonde interface were absent during demonstration hostile environment loggings in which these cable heads were used.

Engineering brain-computer interfaces: past, present and future.

PubMed

Hughes, M A

2014-06-01

Electricity governs the function of both nervous systems and computers. Whilst ions move in polar fluids to depolarize neuronal membranes, electrons move in the solid-state lattices of microelectronic semiconductors. Joining these two systems together, to create an iono-electric brain-computer interface, is an immense challenge. However, such interfaces offer (and in select clinical contexts have already delivered) a method of overcoming disability caused by neurological or musculoskeletal pathology. To fulfill their theoretical promise, several specific challenges demand consideration. Rate-limiting steps cover a diverse range of disciplines including microelectronics, neuro-informatics, engineering, and materials science. As those who work at the tangible interface between brain and outside world, neurosurgeons are well placed to contribute to, and inform, this cutting edge area of translational research. This article explores the historical background, status quo, and future of brain-computer interfaces; and outlines the challenges to progress and opportunities available to the clinical neurosciences community.

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji

2014-06-09

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSbmore » surfaces was observed.« less

External electric field effects on Schottky barrier at Gd3N@C80/Au interface

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Nakashima, Fumihiro; Jin, Ge; Eto, Daichi; Hattori, Hayami; Miyoshi, Noriko; Kirimoto, Kenta; Sun, Yong

2017-08-01

The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3] 9 +-[N3 -+("separators="|C80 ) 6 -] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface.

The electrochemistry of "solid/water" interfaces involved in PEM-H2O reactors: part I. The "Pt/water" interfaces.

PubMed

Wang, Qiang; Cha, Chuan-Sin; Lu, Juntao; Zhuang, Lin

2009-01-28

The nature and properties of Pt surfaces in contact with pure water in PEM-H2O reactors were mimetically studied by employing CV measurements with microelectrode techniques. These "Pt/water" interfaces were found to be electrochemically polarizable, and the local interfacial potential relative to reversible hydrogen electrode (RHE) potential in pure water is numerically the same as the potential value measured against a RHE in contact with PEM as the reference electrode. However, the structural parameters of the electric double layer at the "Pt/water" interfaces can be quite different from those at the "Pt/PEM" interfaces, and the kinetics of electrode processes could be seriously affected by the structure of electric double layer in pure water media. Besides, there is active diffusional flow of intermediates of electrode reactions between the "Pt/water" and the "Pt/PEM" interfaces, thus facilitating the active involvement of the "Pt/water" interfaces in the current-generation mechanism of PEM fuel cells and other types of PEM-H2O reactors.

Film bonded fuel cell interface configuration

DOEpatents

Kaufman, Arthur; Terry, Peter L.

1989-01-01

The present invention relates to improved elements for use in fuel cell stacks, and more particularly, to a stack having a corrosion-resistant, electrally conductive, fluid-impervious interface member therein.

Positron transport studies at the Au - (InP:Fe) interface

NASA Astrophysics Data System (ADS)

Au, H. L.; Lee, T. C.; Beling, C. D.; Fung, S.

1996-03-01

Positron mobility and lifetime measurements have been carried out on semi-insulating Fe-doped InP samples with Au contacts used for electric field application. The lifetime measurements, with electric fields directed towards the Au - InP:Fe interface, reveal no component associated with interfacial open-volume sites and thus give no evidence of any positron mobility. The mobility measurements, made using the Doppler-shifted annihilation radiation technique, however, reveal a temperature independent positron mobility of about 0953-8984/8/10/012/img1 in the range 150 - 300 K. These observations, together with results from I - V analysis, are discussed with reference to two possible band-bending schemes. The first, which requires an ionized shallow donor region adjacent to the Au - InP interface, seems less plausible on a number of grounds. In the second, however, an 0953-8984/8/10/012/img2 negative space charge produces an adverse diffusion barrier for positrons approaching the interface together with a non-uniform electric field in the samples capable of explaining the observed mobility results.

Dynamic Determination of Some Optical and Electrical Properties of Galena Natural Mineral: Potassium Ethyl Xanthate Solution Interface

NASA Astrophysics Data System (ADS)

Todoran, D.; Todoran, R.; Anitas, E. M.; Szakacs, Zs.

2017-12-01

This paper presents results concerning optical and electrical properties of galena natural mineral and of the interface layer formed between it and the potassium ethyl xanthate solution. The applied experimental method was differential optical reflectance spectroscopy over the UV-Vis/NIR spectral domain. Computations were made using the Kramers-Kronig formalism. Spectral dependencies of the electron loss functions, determined from the reflectance data obtained from the polished mineral surface, display van Hove singularities, leading to the determination of its valence band gap and electron plasma energy. Time dependent measurement of the spectral dispersion of the relative reflectance of the film formed at the interface, using the same computational formalism, leads to the dynamical determination of the spectral variation of its optical and electrical properties. We computed behaviors of the dielectric constant (dielectric permittivity), the dielectric loss function, refractive index and extinction coefficient, effective valence number and of the electron loss functions. The measurements tend to stabilize when the dynamic adsorption-desorption equilibrium is reached at the interface level.

Interface interactions in benzophenone doped by multiwalled carbon nanotubes

NASA Astrophysics Data System (ADS)

Lebovka, N. I.; Goncharuk, A.; Melnyk, V. I.; Puchkovska, G. A.

2009-08-01

The interface interactions were studied by methods of conductometry, low-temperature phosphorescence and differential scanning calorimetry (DSC) in multiwalled carbon nanotubes (MWCNT) and benzophenone (BP) composite. The concentration of MWCNTs was varied within 0-1 wt%. A percolative threshold was found at MWCNT concentrations exceeding 0.1 wt%. The integration of MWCNTs caused melting temperature increase (≈3 K for 1 wt% of MWCNTs). The effect of positive thermal resistively coefficient, as well as substantial hysteretic behaviour of electrical conductivity σ in a heating-cooling cycle, was observed near the melting point of BP ( T m=321.5 K). The activation-type temperature behaviour of electrical conductivity was observed in the temperature range of supercooled BP. The activation energy was decreasing with increase of MWCNT concentration. The observed nonlinear dependencies of electrical conductivity σ vs. applied voltage U reflect the transport mechanism of the charge carriers through amorphous interface films formed near the surface of the MWCNTs. The thermal shifts of phosphorescence spectra measured within the temperature range 5-200 K evidence existence of such interface films of amorphous BP with width of the order of 0.1 μm.

X-ray Study of the Electric Double Layer at the n-Hexane/Nanocolloidal Silica Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhonov,A.

The spatial structure of the transition region between an insulator and an electrolyte solution was studied with x-ray scattering. The electron-density profile across the n-hexane/silica sol interface (solutions with 5, 7, and 12 nm colloidal particles) agrees with the theory of the electrical double layer and shows separation of positive and negative charges. The interface consists of three layers, i.e., a compact layer of Na{sup +}, a loose monolayer of nanocolloidal particles as part of a thick diffuse layer, and a low-density layer sandwiched between them. Its structure is described by a model in which the potential gradient at themore » interface reflects the difference in the potentials of 'image forces' between the cationic Na{sup +} and anionic nanoparticles and the specific adsorption of surface charge. The density of water in the large electric field ({approx}10{sup 9}-10{sup 10} V/m) of the transition region and the layering of silica in the diffuse layer is discussed.« less

Electrical and fluid transport in consolidated sphere packs

NASA Astrophysics Data System (ADS)

Zhan, Xin; Schwartz, Lawrence M.; Toksöz, M. Nafi

2015-05-01

We calculate geometrical and transport properties (electrical conductivity, permeability, specific surface area, and surface conductivity) of a family of model granular porous media from an image based representation of its microstructure. The models are based on the packing described by Finney and cover a wide range of porosities. Finite difference methods are applied to solve for electrical conductivity and hydraulic permeability. Two image processing methods are used to identify the pore-grain interface and to test correlations linking permeability to electrical conductivity. A three phase conductivity model is developed to compute surface conductivity associated with the grain-pore interface. Our results compare well against empirical models over the entire porosity range studied. We conclude by examining the influence of image resolution on our calculations.

High bandwidth magnetically isolated signal transmission circuit

NASA Technical Reports Server (NTRS)

Repp, John Donald (Inventor)

2005-01-01

Many current electronic systems incorporate expensive or sensitive electrical components. Because electrical energy is often generated or transmitted at high voltages, the power supplies to these electronic systems must be carefully designed. Power supply design must ensure that the electrical system being supplied with power is not exposed to excessive voltages or currents. In order to isolate power supplies from electrical equipment, many methods have been employed. These methods typically involve control systems or signal transfer methods. However, these methods are not always suitable because of their drawbacks. The present invention relates to transmitting information across an interface. More specifically, the present invention provides an apparatus for transmitting both AC and DC information across a high bandwidth magnetic interface with low distortion.

Interaction of a conductive crack and of an electrode at a piezoelectric bimaterial interface

NASA Astrophysics Data System (ADS)

Onopriienko, Oleg; Loboda, Volodymyr; Sheveleva, Alla; Lapusta, Yuri

2018-06-01

The interaction of a conductive crack and an electrode at a piezoelectric bi-material interface is studied. The bimaterial is subjected to an in-plane electrical field parallel to the interface and an anti-plane mechanical loading. The problem is formulated and reduced, via the application of sectionally analytic vector functions, to a combined Dirichlet-Riemann boundary value problem. Simple analytical expressions for the stress, the electric field, and their intensity factors as well as for the crack faces' displacement jump are derived. Our numerical results illustrate the proposed approach and permit to draw some conclusions on the crack-electrode interaction.

Three levels of neuroelectronic interfacing: silicon chips with ion channels, nerve cells, and brain tissue.

PubMed

Fromherz, Peter

2006-12-01

We consider the direct electrical interfacing of semiconductor chips with individual nerve cells and brain tissue. At first, the structure of the cell-chip contact is studied. Then we characterize the electrical coupling of ion channels--the electrical elements of nerve cells--with transistors and capacitors in silicon chips. On that basis it is possible to implement signal transmission between microelectronics and the microionics of nerve cells in both directions. Simple hybrid neuroelectronic systems are assembled with neuron pairs and with small neuronal networks. Finally, the interfacing with capacitors and transistors is extended to brain tissue cultured on silicon chips. The application of highly integrated silicon chips allows an imaging of neuronal activity with high spatiotemporal resolution. The goal of the work is an integration of neuronal network dynamics with digital electronics on a microscopic level with respect to experiments in brain research, medical prosthetics, and information technology.

A gigantically increased ratio of electrical to thermal conductivity and synergistically enhanced thermoelectric properties in interface-controlled TiO2-RGO nanocomposites.

PubMed

Nam, Woo Hyun; Lim, Young Soo; Kim, Woochul; Seo, Hyeon Kook; Dae, Kyun Seong; Lee, Soonil; Seo, Won-Seon; Lee, Jeong Yong

2017-06-14

We report synergistically enhanced thermoelectric properties through the independently controlled charge and thermal transport properties in a TiO 2 -reduced graphene oxide (RGO) nanocomposite. By the consolidation of TiO 2 -RGO hybrid powder using spark plasma sintering, we prepared an interface-controlled TiO 2 -RGO nanocomposite where its grain boundaries are covered with the RGO network. Both the enhancement in electrical conductivity and the reduction in thermal conductivity were simultaneously achieved thanks to the beneficial effects of the RGO network, and detailed mechanisms are discussed. This led to the gigantic increase in the ratio of electrical to thermal conductivity by six orders of magnitude and also the synergistic enhancement in the thermoelectric figure of merit by two orders. Our results present a strategy for the realization of 'phonon-glass electron-crystals' through interface control using graphene in graphene hybrid thermoelectric materials.

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

An interface tracking model for droplet electrocoalescence.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Lindsay Crowl

This report describes an Early Career Laboratory Directed Research and Development (LDRD) project to develop an interface tracking model for droplet electrocoalescence. Many fluid-based technologies rely on electrical fields to control the motion of droplets, e.g. microfluidic devices for high-speed droplet sorting, solution separation for chemical detectors, and purification of biodiesel fuel. Precise control over droplets is crucial to these applications. However, electric fields can induce complex and unpredictable fluid dynamics. Recent experiments (Ristenpart et al. 2009) have demonstrated that oppositely charged droplets bounce rather than coalesce in the presence of strong electric fields. A transient aqueous bridge forms betweenmore » approaching drops prior to pinch-off. This observation applies to many types of fluids, but neither theory nor experiments have been able to offer a satisfactory explanation. Analytic hydrodynamic approximations for interfaces become invalid near coalescence, and therefore detailed numerical simulations are necessary. This is a computationally challenging problem that involves tracking a moving interface and solving complex multi-physics and multi-scale dynamics, which are beyond the capabilities of most state-of-the-art simulations. An interface-tracking model for electro-coalescence can provide a new perspective to a variety of applications in which interfacial physics are coupled with electrodynamics, including electro-osmosis, fabrication of microelectronics, fuel atomization, oil dehydration, nuclear waste reprocessing and solution separation for chemical detectors. We present a conformal decomposition finite element (CDFEM) interface-tracking method for the electrohydrodynamics of two-phase flow to demonstrate electro-coalescence. CDFEM is a sharp interface method that decomposes elements along fluid-fluid boundaries and uses a level set function to represent the interface.« less

Nanomaterials at the neural interface.

PubMed

Scaini, Denis; Ballerini, Laura

2018-06-01

Interfacing the nervous system with devices able to efficiently record or modulate the electrical activity of neuronal cells represents the underlying foundation of future theranostic applications in neurology and of current openings in neuroscience research. These devices, usually sensing cell activity via microelectrodes, should be characterized by safe working conditions in the biological milieu together with a well-controlled operation-life. The stable device/neuronal electrical coupling at the interface requires tight interactions between the electrode surface and the cell membrane. This neuro-electrode hybrid represents the hyphen between the soft nature of neural tissue, generating electrical signals via ion motions, and the rigid realm of microelectronics and medical devices, dealing with electrons in motion. Efficient integration of these entities is essential for monitoring, analyzing and controlling neuronal signaling but poses significant technological challenges. Improving the cell/electrode interaction and thus the interface performance requires novel engineering of (nano)materials: tuning at the nanoscale electrode's properties may lead to engineer interfacing probes that better camouflaged with their biological target. In this brief review, we highlight the most recent concepts in nanotechnologies and nanomaterials that might help reducing the mismatch between tissue and electrode, focusing on the device's mechanical properties and its biological integration with the tissue. Copyright © 2017 Elsevier Ltd. All rights reserved.

Electroluminescence and electrical degradation of insulating polymers at electrode interfaces under divergent fields

NASA Astrophysics Data System (ADS)

Zhang, Shuai; Li, Qi; Hu, Jun; Zhang, Bo; He, Jinliang

2018-04-01

Electrical degradation of insulating polymers at electrode interfaces is an essential factor in determining long-term reliability. A critical challenge is that the exact mechanism of degradation is not fully understood, either experimentally or theoretically, due to the inherent complex processes. Consequently, in this study, we investigate electroluminescence (EL) at the interface of an electrode and insulator, and determine the relationship between EL and electrical degradation. Using a tip-plate electrode structure, the unique features of EL under a highly divergent field are investigated. The voltage type (alternating or direct current), the polymer matrix, and the time of pressing are also investigated separately. A study of EL from insulators under a divergent field is provided, and the relationship between EL spectra and degradation is discussed. It is shown that EL spectra under a divergent field have unique characteristics compared with EL spectra from polymer films under a uniform field and the most obvious one is the UV emission. The results obtained in the current investigation bring us a step closer to understanding the process of electrical degradation and provide a potential way to diagnose insulator defects.

Characterization of structural and electrostatic complexity in pentacene thin films by scanning probe microscopy

NASA Astrophysics Data System (ADS)

Puntambekar, Kanan Prakash

The advancement of organic electronics for applications in solar energy conversion, printed circuitry, displays, and solid-state lighting depends upon optimization of structure and properties for a variety of organic semiconductor interfaces. Organic semiconductor/insulator (O/I) and organic-metal (O/M) interfaces, in particular, are critical to the operation of organic thin film transistors (OTFTs) currently being developed for printed flexible electronics. Scanning probe microscopy (SPM) is a powerful tool to isolate and characterize the bottlenecks to charge transport at these interfaces. This thesis establishes a direct correlation between the structural disorder and electrical complexity at these interfaces, using various SPM based methods and discusses the implications of such complexity on device performance. To examine the O/M interfaces, surface potentials of operating pentacene TFTs with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. Simultaneously obtained topography and surface potential maps elucidated the correlation between the morphology and contact resistance at the O/M interface; the bottom contact TFTs were observed to be contact limited at large gate voltages, while the top contact TFTs were not contact limited. A direct correlation between structural defects and electric potential variations at the pentacene and silicon dioxide, a common insulator, is demonstrated. Lateral force microscopy (LFM) generates striking images of the polycrystalline microstructure of a monolayer thick pentacene film, allowing clear visualization of the grain boundary network. Further more, surface potential wells localized at the grain boundaries were observed by KFM, suggesting that the grain boundaries may serve as charge carrier (hole) traps. Line dislocations were also revealed in the second monolayer by chemical etching and SPM and produce strong variations in the surface potential that must affect the interfacial charge conductance. Structural disorder at the O/I and O/M interfaces degrades both injection and transport of charge, and therefore needs to be minimized. Thus both visualization and correlation of structural and electrical complexity at these interfaces have important implications for understanding electrical transport in OTFTs and for defining strategies to improve device performance.

Oxidation of SiC

NASA Astrophysics Data System (ADS)

Cooper, James A.

1997-03-01

SiC is a wide band gap hexagonal anisotropic semiconductor which is attractive for use in high voltage, high temperature, or high power applications. SiC is also the only compound semiconductor that can be thermally oxidized to form SiO_2, making it possible to construct many conventional MOS devices in this material. The electrical quality of the SiO_2/SiC interface is far from ideal, however, and considerable research is presently directed to understanding and improving this interface. Electrical characterization of the SiC MOS interface is complicated by the wide band gap, since most interface states are energetically too far removed from the conduction or valence bands to respond to electrical stimulation at room temperature. Moreover, very little information is yet available on the properties of the MOS interface on the 4H polytype of SiC (preferred because of it's higher bulk electron mobility) or on interfaces on crystalline surfaces perpendicular to the basal plane (where an equal number of Si and C atoms are present). Finally, electron mobilities in inversion layers on 4H-SiC reported to date are anomolously low, especially in consideration of the relatively high bulk mobilities in this polytype. In this talk we will discuss MOS characterization techniques for wide band gap semiconductors and review the current understanding of the physics of the MOS interface on thermally oxidized SiC.

Developing a tissue-engineered neural-electrical relay using encapsulated neuronal constructs on conducting polymer fibers.

PubMed

Cullen, D Kacy; R Patel, Ankur; Doorish, John F; Smith, Douglas H; Pfister, Bryan J

2008-12-01

Neural-electrical interface platforms are being developed to extracellularly monitor neuronal population activity. Polyaniline-based electrically conducting polymer fibers are attractive substrates for sustained functional interfaces with neurons due to their flexibility, tailored geometry and controlled electro-conductive properties. In this study, we addressed the neurobiological considerations of utilizing small diameter (<400 microm) fibers consisting of a blend of electrically conductive polyaniline and polypropylene (PA-PP) as the backbone of encapsulated tissue-engineered neural-electrical relays. We devised new approaches to promote survival, adhesion and neurite outgrowth of primary dorsal root ganglion neurons on PA-PP fibers. We attained a greater than ten-fold increase in the density of viable neurons on fiber surfaces to approximately 700 neurons mm(-2) by manipulating surrounding surface charges to bias settling neuronal suspensions toward fibers coated with cell-adhesive ligands. This stark increase in neuronal density resulted in robust neuritic extension and network formation directly along the fibers. Additionally, we encapsulated these neuronal networks on PA-PP fibers using agarose to form a protective barrier while potentially facilitating network stability. Following encapsulation, the neuronal networks maintained integrity, high viability (>85%) and intimate adhesion to PA-PP fibers. These efforts accomplished key prerequisites for the establishment of functional electrical interfaces with neuronal populations using small diameter PA-PP fibers-specifically, improved neurocompatibility, high-density neuronal adhesion and neuritic network development directly on fiber surfaces.

High-Performance Power-Semiconductor Packages

NASA Technical Reports Server (NTRS)

Renz, David; Hansen, Irving; Berman, Albert

1989-01-01

A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

Electrical manipulation of oligonucleotides grafted to charged surfaces.

PubMed

Rant, Ulrich; Arinaga, Kenji; Fujita, Shozo; Yokoyama, Naoki; Abstreiter, Gerhard; Tornow, Marc

2006-09-21

The electrical manipulation of short DNA molecules on surfaces offers novel functionalities with fascinating possibilities in the field of bio-interfaces. Here we present systematic investigations of the electrical interactions which govern the structure of oligonucleotides on charged gold surfaces. Successively, we address influences of the applied field strength, the role of DC electrode potentials, in particular for polycrystalline surfaces, as well as screening effects of the surrounding electrolyte solution. Data obtained for single and double stranded DNA exhibit differences which can be attributed to the dissimilar flexibility of the different molecular conformations. A comparison of the experimental results with a basic model shows how the alignment of the molecules adjusts according to a balance between electrically induced ordering and stochastic thermal motions. The presented conclusions are expected to be of general relevance for the behaviour of polyelectrolytes exposed to localized electric fields at interfaces.

Propulsion Wheel Motor for an Electric Vehicle

NASA Technical Reports Server (NTRS)

Herrera, Eduardo (Inventor); Farrell, Logan Christopher (Inventor); Guo, Raymond (Inventor); Junkin, Lucien Q. (Inventor); Bluethmann, William J. (Inventor); Vitale, Robert L. (Inventor); Weber, Steven J. (Inventor); Lee, Chunhao J. (Inventor); Eggleston, IV, Raymond Edward (Inventor); Figuered, Joshua M. (Inventor);

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruverman, Alexei; Tsymbal, Evgeny Y.; Eom, Chang-Beom

2017-05-03

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modelingmore » of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.« less

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing

NASA Astrophysics Data System (ADS)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2018-05-01

In this study, Ga0.6Sb0.4 thin films were grown on quartz and Ge(100) 1° off-axis substrates by RF magnetron sputtering at 500 °C. Ga0.6Sb0.4/Ge(100) shows n-type conductivity at room temperature (RT) and p-type conductivity at low temperatures, whereas undoped GaSb thin films exhibit p-type conductivity, irrespective of their growth methods and conditions. Their electrical properties were determined by rapid thermal annealing, which revealed that Ga0.6Sb0.4/Ge(100) contains two types of acceptors and two types of donors. The acceptors are considered to be GaSb and electrically active sites on dislocations originating at the Ga0.6Sb0.4/Ge(100) interface, while donors are believed to be Gai and electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface. In these acceptors and donors, the shallow donor concentration is higher than the shallow acceptor concentration, and the shallow donor level is deeper than the shallow acceptor level. Thus, we concluded that Ga0.6Sb0.4/Ge(100) shows n-type conductivity at RT due to electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface and native defects originating from excess Ga.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Electrically detected crystal orientation dependent spin-Rabi beat oscillation of c-Si(111)/SiO2 interface states

NASA Astrophysics Data System (ADS)

Paik, Seoyoung; Lee, Sang-Yun; McCamey, Dane R.; Boehme, Christoph

2011-12-01

Electrically detected spin-Rabi beat oscillation of pairs of paramagnetic near interface states at the phosphorous doped (1016 cm-3) Si(111)/SiO2 interface is reported. Due to the g-factor anisotropy of the Pb center (a silicon surface dangling bond), one can tune intrapair Larmor frequency differences (Larmor separations) by orientation of the crystal with regard to an external magnetic field. Since Larmor separation governs the number of beating spin pairs, crystal orientation can control the beat current. This is used to identify spin states that are paired by mutual electronic transitions. The experiments confirm the presence of the previously reported 31P-Pb transition and provide direct experimental evidence of the previously hypothesized Pb-E' center (a near interface SiO2 bulk state) transition.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

NASA Astrophysics Data System (ADS)

Lechaux, Y.; Fadjie, A.; Bollaert, S.; Talbo, V.; Mateos, J.; González, T.; Vasallo, B. G.; Wichmann, N.

2015-10-01

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.

The effect of interface hopping on inelastic scattering of oppositely charged polarons in polymers

NASA Astrophysics Data System (ADS)

Di, Bing; Wang, Ya-Dong; Zhang, Ya-Lin; An, Zhong

2013-06-01

The inelastic scattering of oppositely charge polarons in polymer heterojunctions is believed to be of fundamental importance for the light-emitting and transport properties of conjugated polymers. Based on the tight-binding SSH model, and by using a nonadiabatic molecular dynamic method, we investigate the effects of interface hopping on inelastic scattering of oppositely charged polarons in a polymer heterojunction. It is found that the scattering processes of the charge and lattice defect depend sensitively on the hopping integrals at the polymer/polymer interface when the interface potential barrier and applied electric field strength are constant. In particular, at an intermediate electric field, when the interface hopping integral of the polymer/polymer heterojunction material is increased beyond a critical value, two polarons can combine to become a lattice deformation in one of the two polymer chains, with the electron and the hole bound together, i.e., a self-trapped polaron—exciton. The yield of excitons then increases to a peak value. These results show that interface hopping is of fundamental importance and facilitates the formation of polaron—excitons.

Magnetic and Electric Transverse Spin Density of Spatially Confined Light

NASA Astrophysics Data System (ADS)

Neugebauer, Martin; Eismann, Jörg S.; Bauer, Thomas; Banzer, Peter

2018-04-01

When a beam of light is laterally confined, its field distribution can exhibit points where the local magnetic and electric field vectors spin in a plane containing the propagation direction of the electromagnetic wave. The phenomenon indicates the presence of a nonzero transverse spin density. Here, we experimentally investigate this transverse spin density of both magnetic and electric fields, occurring in highly confined structured fields of light. Our scheme relies on the utilization of a high-refractive-index nanoparticle as a local field probe, exhibiting magnetic and electric dipole resonances in the visible spectral range. Because of the directional emission of dipole moments that spin around an axis parallel to a nearby dielectric interface, such a probe particle is capable of locally sensing the magnetic and electric transverse spin density of a tightly focused beam impinging under normal incidence with respect to said interface. We exploit the achieved experimental results to emphasize the difference between magnetic and electric transverse spin densities.

Ultrasound guided electrical impedance tomography for 2D free-interface reconstruction

NASA Astrophysics Data System (ADS)

Liang, Guanghui; Ren, Shangjie; Dong, Feng

2017-07-01

The free-interface detection problem is normally seen in industrial or biological processes. Electrical impedance tomography (EIT) is a non-invasive technique with advantages of high-speed and low cost, and is a promising solution for free-interface detection problems. However, due to the ill-posed and nonlinear characteristics, the spatial resolution of EIT is low. To deal with the issue, an ultrasound guided EIT is proposed to directly reconstruct the geometric configuration of the target free-interface. In the method, the position of the central point of the target interface is measured by a pair of ultrasound transducers mounted at the opposite side of the objective domain, and then the position measurement is used as the prior information for guiding the EIT-based free-interface reconstruction. During the process, a constrained least squares framework is used to fuse the information from different measurement modalities, and the Lagrange multiplier-based Levenberg-Marquardt method is adopted to provide the iterative solution of the constraint optimization problem. The numerical results show that the proposed ultrasound guided EIT method for the free-interface reconstruction is more accurate than the single modality method, especially when the number of valid electrodes is limited.

Adaptive Motor Resistance Video Game Exercise Apparatus and Method of Use Thereof

NASA Technical Reports Server (NTRS)

Reich, Alton (Inventor); Shaw, James (Inventor)

2015-01-01

The invention comprises a method and/or an apparatus using computer configured exercise equipment and an electric motor provided physical resistance in conjunction with a game system, such as a video game system, where the exercise system provides real physical resistance to a user interface. Results of user interaction with the user interface are integrated into a video game, such as running on a game console. The resistance system comprises: a subject interface, software control, a controller, an electric servo assist/resist motor, an actuator, and/or a subject sensor. The system provides actual physical interaction with a resistance device as input to the game console and game run thereon.

Incorporating an optical waveguide into a neural interface

DOEpatents

Tolosa, Vanessa; Delima, Terri L.; Felix, Sarah H.; Pannu, Satinderpall S.; Shah, Kedar G.; Sheth, Heeral; Tooker, Angela C.

2016-11-08

An optical waveguide integrated into a multielectrode array (MEA) neural interface includes a device body, at least one electrode in the device body, at least one electrically conducting lead coupled to the at least one electrode, at least one optical channel in the device body, and waveguide material in the at least one optical channel. The fabrication of a neural interface device includes the steps of providing a device body, providing at least one electrode in the device body, providing at least one electrically conducting lead coupled to the at least one electrode, providing at least one optical channel in the device body, and providing a waveguide material in the at least one optical channel.

Effects of interface electric field on the magnetoresistance in spin devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interfacemore » electronic structures.« less

Dual mode ion mobility spectrometer and method for ion mobility spectrometry

DOEpatents

Scott, Jill R [Idaho Falls, ID; Dahl, David A [Idaho Falls, ID; Miller, Carla J [Idaho Falls, ID; Tremblay, Paul L [Idaho Falls, ID; McJunkin, Timothy R [Idaho Falls, ID

2007-08-21

Ion mobility spectrometer apparatus may include an ion interface that is operable to hold positive and negative ions and to simultaneously release positive and negative ions through respective positive and negative ion ports. A first drift chamber is operatively associated with the positive ion port of the ion interface and encloses an electric field therein. A first ion detector operatively associated with the first drift chamber detects positive ions from the first drift chamber. A second drift chamber is operatively associated with the negative ion port of the ion interface and encloses an electric field therein. A second ion detector operatively associated with the second drift chamber detects negative ions from said second drift chamber.

Solvophilic and solvophobic surfaces and non-Coulombic surface interactions in charge regulating electric double layers

NASA Astrophysics Data System (ADS)

Vangara, R.; van Swol, F.; Petsev, D. N.

2018-01-01

The properties of electric double layers are governed by the interface between the substrate and the adjacent electrolyte solution. This interface is involved in chemical, Coulombic, and non-Coulombic (e.g., van der Waals or Lennard-Jones) interactions with all components of the fluid phase. We present a detailed study of these interactions using a classical density functional approach. A particular focus is placed on the non-Coulombic interactions and their effect on the surface chemistry and charge regulation. The solution structure near the charged interface is also analyzed and used to offer a thorough interpretation of established concepts such as the Stern and diffuse ionic layers.

Behavior of Oxide Film at Interface between Particles of Al-Mg Alloy Powder Compacts Prepared by Pulse Electric Current Sintering

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Yamaguchi, Norio; Song, Minghui; Mitsuishi, Kazutaka; Furuya, Kazuo; Noda, Tetsuji

2003-07-01

Al-1.0 mass% Mg alloy powders were sintered using the pulse electric current sintering (PECS) process at various temperatures. The microstructure at the interfaces between powder particles and the effect of sintering temperature on interface characteristics were investigated using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). The precipitates were observed at the interfaces between powder particles of the compacts. The amounts of the precipitates increased and the compositions changed with an increase in sintering temperature: MgO for the compact sintered at 613 K, MgAl2O4+MgO for those at 663 K and 713 K, and MgAl2O4 for those above 763 K. Comparing the results obtained by the PECS process with those of diffusion bonding experiments and thermodynamic calculation, it was suggested that the temperature at the interfaces between the particles was higher than that of the particles sintered by the PECS process.

Epitaxy of semiconductor-superconductor nanowires

NASA Astrophysics Data System (ADS)

Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

2015-04-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

Inhomogeneous screening of gate electric field by interface states in graphene FETs

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2017-09-01

The electronic states at graphene-SiO2 interface and their inhomogeneity is investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states’ density, Dit(E) , required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad Dit(E) leads to an effect similar to a reduction in the Fermi velocity while the narrow Dit(E) leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow Dit(E) . Finally, this also demonstrates STM as a tool to probe the density of interface states in various 2D Dirac materials.

Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

NASA Technical Reports Server (NTRS)

Hecht, Michael H.; Bell, L. D.; Grunthaner, F. J.; Kaiser, W. J.

1988-01-01

A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

Corrosion protected, multi-layer fuel cell interface

DOEpatents

Feigenbaum, Haim; Pudick, Sheldon; Wang, Chiu L.

1986-01-01

An improved interface configuration for use between adjacent elements of a fuel cell stack. The interface is impervious to gas and liquid and provides resistance to corrosion by the electrolyte of the fuel cell. The multi-layer configuration for the interface comprises a non-cupreous metal-coated metallic element to which is film-bonded a conductive layer by hot pressing a resin therebetween. The multi-layer arrangement provides bridging electrical contact.

Mission applications of electric propulsion

NASA Technical Reports Server (NTRS)

Atkins, K. L.

1974-01-01

This paper reviews the mission applications of electric propulsion. The energy requirements of candidate high-energy missions gaining in NASA priority are used to highlight the potential of electric propulsion. Mission-propulsion interfaces are examined to point out differences between chemical and electric applications. Brief comparisons between ballistic requirements and capabilities and those of electric propulsion show that electric propulsion is presently the most practical and perhaps the only technology which can accomplish missions with these energy requirements.

Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

NASA Astrophysics Data System (ADS)

Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

2014-08-01

We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

Interface Provides Standard-Bus Communication

NASA Technical Reports Server (NTRS)

Culliton, William G.

1995-01-01

Microprocessor-controlled interface (IEEE-488/LVABI) incorporates service-request and direct-memory-access features. Is circuit card enabling digital communication between system called "laser auto-covariance buffer interface" (LVABI) and compatible personal computer via general-purpose interface bus (GPIB) conforming to Institute for Electrical and Electronics Engineers (IEEE) Standard 488. Interface serves as second interface enabling first interface to exploit advantages of GPIB, via utility software written specifically for GPIB. Advantages include compatibility with multitasking and support of communication among multiple computers. Basic concept also applied in designing interfaces for circuits other than LVABI for unidirectional or bidirectional handling of parallel data up to 16 bits wide.

Coherently Coupled ZnO and VO2 Interface studied by Photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Saha, S.; Annadi, A.; Zhao, Y. L.; Gopinadhan, K.; Wang, X.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Herng, T. S.; Nina, Bao; Ariando, -; Ding, Jun; Venkatesan, T.

2012-02-01

In this work we report a study of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire by photoluminescence and electrical transport measurements across the VO2 metal insulator phase transition (MIT). The photoluminescence of the ZnO layer showed a broad hysteresis induced by the phase transition of VO2 while the width of the electrical hysteresis was narrow and unaffected by the over layer. The enhanced width of the PL hysteresis was due to the formation of defects during the MIT as evidenced by a broad hysteresis in the opposite direction to that of the band edge PL in the defect luminescense. Unlike VO2 the defects in ZnO did not fully recover across the phase transition. From the defect luminescence data, oxygen interstitials were found to be the predominant defects in ZnO mediated by the strain from the VO2 phase transition. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces and also for novel device application.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899; Hacker, Christina A.

2014-03-21

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

Atomistic study of mixing at high Z / low Z interfaces at Warm Dense Matter Conditions

NASA Astrophysics Data System (ADS)

Haxhimali, Tomorr; Glosli, James; Rudd, Robert; Lawrence Livermore National Laboratory Team

2016-10-01

We use atomistic simulations to study different aspects of mixing occurring at an initially sharp interface of high Z and low Z plasmas in the Warm/Hot Dense Matter regime. We consider a system of Diamond (the low Z component) in contact with Ag (the high Z component), which undergoes rapid isochoric heating from room temperature up to 10 eV, rapidly changing the solids into warm dense matter at solid density. We simulate the motion of ions via the screened Coulomb potential. The electric field, the electron density and ionizations level are computed on the fly by solving Poisson equation. The spatially varying screening lengths computed from the electron cloud are included in this effective interaction; the electrons are not simulated explicitly. We compute the electric field generated at the Ag-C interface as well as the dynamics of the ions during the mixing process occurring at the plasma interface. Preliminary results indicate an anomalous transport of high Z ions (Ag) into the low Z component (C); a phenomenon that is partially related to the enhanced transport of ions due to the generated electric field. These results are in agreement with recent experimental observation on Au-diamond plasma interface. This work was performed under the auspices of the US Dept. of Energy by Lawrence Livermore National Security, LLC under Contract DE-AC52-07NA27344.

Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation

NASA Astrophysics Data System (ADS)

Xing, Songling; Lin, Luchan; Zou, Guisheng; Liu, Lei; Peng, Peng; Wu, Aiping; Duley, Walter W.; Zhou, Y. Norman

2017-10-01

In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO2) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO2-x layer is formed between the Pt electrode and the TiO2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm-2, the Pt/TiO2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation.

PubMed

Xing, Songling; Lin, Luchan; Zou, Guisheng; Liu, Lei; Peng, Peng; Wu, Aiping; Duley, Walter W; Zhou, Y Norman

2017-10-06

In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO 2 ) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO 2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO 2-x layer is formed between the Pt electrode and the TiO 2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm -2 , the Pt/TiO 2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

Current-voltage characteristics and electroresistance in LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 thin film composites.

PubMed

Gadani, Keval; Keshvani, M J; Rajyaguru, Bhargav; Dhruv, Davit; Kataria, B R; Joshi, A D; Asokan, K; Shah, N A; Solanki, P S

2017-11-08

In this communication, we report results of the electrical transport properties across the interface of composites consisting of n-type LaMnO 3-δ (LMO) and p-type La 0.7 Ca 0.3 MnO 3 (LCMO) manganites grown on LaAlO 3 (LAO) single crystalline substrates using low cost wet chemical solution deposition (CSD) and sophisticated, well-controlled dry chemical vapor deposition (CVD) chemical techniques. The XRD ϕ-scan studies reveal the single crystalline nature of both bilayered composites, with parallel epitaxial growth of LMO and LCMO layers onto the LAO substrate. The valence states of Mn ions in both layers of both composites were identified by performing X-ray photoelectron spectroscopy (XPS). The I-V characteristics of the LMO/LCMO interfaces show strong backward diode-like behavior at higher applied voltages well above the crossover voltage (V NB ). Below V NB , the interfaces demonstrate normal diode-like characteristics throughout the studied temperature range. The electric field-induced modulation of the LMO/LCMO junction resistance of the interfaces has been observed. Electric field-dependent electroresistance (ER) modifications at different temperatures have also been studied. The electrical transport properties have been discussed in the context of various mechanisms, such as charge injection, tunneling, depletion region modification and thermal processes across the interface. The effects of structurally and chemically developed sharp interfaces between the LMO and LCMO layers on the transport properties of the presently studied bilayered thin film composites have been discussed on the basis of correlation between the physicochemical characterization and charge transport behavior. A comparison of different aspects of the transport properties has been presented in the context of the structural strain and crystallinity of the composites grown using both wet and dry chemical techniques.

Advantages of soft subdural implants for the delivery of electrochemical neuromodulation therapies to the spinal cord

NASA Astrophysics Data System (ADS)

Capogrosso, Marco; Gandar, Jerome; Greiner, Nathan; Moraud, Eduardo Martin; Wenger, Nikolaus; Shkorbatova, Polina; Musienko, Pavel; Minev, Ivan; Lacour, Stephanie; Courtine, Grégoire

2018-04-01

Objective. We recently developed soft neural interfaces enabling the delivery of electrical and chemical stimulation to the spinal cord. These stimulations restored locomotion in animal models of paralysis. Soft interfaces can be placed either below or above the dura mater. Theoretically, the subdural location combines many advantages, including increased selectivity of electrical stimulation, lower stimulation thresholds, and targeted chemical stimulation through local drug delivery. However, these advantages have not been documented, nor have their functional impact been studied in silico or in a relevant animal model of neurological disorders using a multimodal neural interface. Approach. We characterized the recruitment properties of subdural interfaces using a realistic computational model of the rat spinal cord that included explicit representation of the spinal roots. We then validated and complemented computer simulations with electrophysiological experiments in rats. We additionally performed behavioral experiments in rats that received a lateral spinal cord hemisection and were implanted with a soft interface. Main results. In silico and in vivo experiments showed that the subdural location decreased stimulation thresholds compared to the epidural location while retaining high specificity. This feature reduces power consumption and risks of long-term damage in the tissues, thus increasing the clinical safety profile of this approach. The hemisection induced a transient paralysis of the leg ipsilateral to the injury. During this period, the delivery of electrical stimulation restricted to the injured side combined with local chemical modulation enabled coordinated locomotor movements of the paralyzed leg without affecting the non-impaired leg in all tested rats. Electrode properties remained stable over time, while anatomical examinations revealed excellent bio-integration properties. Significance. Soft neural interfaces inserted subdurally provide the opportunity to deliver electrical and chemical neuromodulation therapies using a single, bio-compatible and mechanically compliant device that effectively alleviates locomotor deficits after spinal cord injury.

Predicting the Electric Field Distribution in the Brain for the Treatment of Glioblastoma

PubMed Central

Miranda, Pedro C.; Mekonnen, Abeye; Salvador, Ricardo; Basser, Peter J.

2014-01-01

The use of alternating electric fields has been recently proposed for the treatment of recurrent glioblastoma. In order to predict the electric field distribution in the brain during the application of such tumor treating fields (TTF), we constructed a realistic head model from MRI data and placed transducer arrays on the scalp to mimic an FDA-approved medical device. Values for the tissue dielectric properties were taken from the literature; values for the device parameters were obtained from the manufacturer. The finite element method was used to calculate the electric field distribution in the brain. We also included a “virtual lesion” in the model to simulate the presence of an idealized tumor. The calculated electric field in the brain varied mostly between 0.5 and 2.0 V/cm and exceeded 1.0 V/cm in 60% of the total brain volume. Regions of local field enhancement occurred near interfaces between tissues with different conductivities wherever the electric field was perpendicular to those interfaces. These increases were strongest near the ventricles but were also present outside the tumor’s necrotic core and in some parts of the gray matter-white matter interface. The electric field values predicted in this model brain are in reasonably good agreement with those that have been shown to reduce cancer cell proliferation in vitro. The electric field distribution is highly non-uniform and depends on tissue geometry and dielectric properties. This could explain some of the variability in treatment outcomes. The proposed modeling framework could be used to better understand the physical basis of TTF efficacy through retrospective analysis and to improve TTF treatment planning. PMID:25003941

Predicting the electric field distribution in the brain for the treatment of glioblastoma

NASA Astrophysics Data System (ADS)

Miranda, Pedro C.; Mekonnen, Abeye; Salvador, Ricardo; Basser, Peter J.

2014-08-01

The use of alternating electric fields has been recently proposed for the treatment of recurrent glioblastoma. In order to predict the electric field distribution in the brain during the application of such tumor treating fields (TTF), we constructed a realistic head model from MRI data and placed transducer arrays on the scalp to mimic an FDA-approved medical device. Values for the tissue dielectric properties were taken from the literature; values for the device parameters were obtained from the manufacturer. The finite element method was used to calculate the electric field distribution in the brain. We also included a ‘virtual lesion’ in the model to simulate the presence of an idealized tumor. The calculated electric field in the brain varied mostly between 0.5 and 2.0 V cm - 1 and exceeded 1.0 V cm - 1 in 60% of the total brain volume. Regions of local field enhancement occurred near interfaces between tissues with different conductivities wherever the electric field was perpendicular to those interfaces. These increases were strongest near the ventricles but were also present outside the tumor’s necrotic core and in some parts of the gray matter-white matter interface. The electric field values predicted in this model brain are in reasonably good agreement with those that have been shown to reduce cancer cell proliferation in vitro. The electric field distribution is highly non-uniform and depends on tissue geometry and dielectric properties. This could explain some of the variability in treatment outcomes. The proposed modeling framework could be used to better understand the physical basis of TTF efficacy through retrospective analysis and to improve TTF treatment planning.

Predicting the electric field distribution in the brain for the treatment of glioblastoma.

PubMed

Miranda, Pedro C; Mekonnen, Abeye; Salvador, Ricardo; Basser, Peter J

2014-08-07

The use of alternating electric fields has been recently proposed for the treatment of recurrent glioblastoma. In order to predict the electric field distribution in the brain during the application of such tumor treating fields (TTF), we constructed a realistic head model from MRI data and placed transducer arrays on the scalp to mimic an FDA-approved medical device. Values for the tissue dielectric properties were taken from the literature; values for the device parameters were obtained from the manufacturer. The finite element method was used to calculate the electric field distribution in the brain. We also included a 'virtual lesion' in the model to simulate the presence of an idealized tumor. The calculated electric field in the brain varied mostly between 0.5 and 2.0 V cm( - 1) and exceeded 1.0 V cm( - 1) in 60% of the total brain volume. Regions of local field enhancement occurred near interfaces between tissues with different conductivities wherever the electric field was perpendicular to those interfaces. These increases were strongest near the ventricles but were also present outside the tumor's necrotic core and in some parts of the gray matter-white matter interface. The electric field values predicted in this model brain are in reasonably good agreement with those that have been shown to reduce cancer cell proliferation in vitro. The electric field distribution is highly non-uniform and depends on tissue geometry and dielectric properties. This could explain some of the variability in treatment outcomes. The proposed modeling framework could be used to better understand the physical basis of TTF efficacy through retrospective analysis and to improve TTF treatment planning.

Apparatus for adapting an end effector device remotely controlled manipulator arm

NASA Technical Reports Server (NTRS)

Clark, K. H. (Inventor)

1985-01-01

Apparatus for adapting a general purpose and effector device to a special purpose and effector is disclosed which includes an adapter bracket assembly which provides a mechanical and electrical interface between the end effector devices. The adapter bracket assembly includes an adapter connector post which interlocks with a diamond shaped gripping channel formed in closed jaws of the general purpose end effector. The angularly intersecting surfaces of the connector post and gripping channel prevent any relative movement there between. Containment webs constrain the outer finger plates of the general purpose jaws to prevent pitch motion. Electrical interface is provided by conical, self aligning electrical connector components carried by respective ones of said end effectors.

Interface structure and properties of CNTs/Cu composites fabricated by electroless deposition and spark plasma sintering

NASA Astrophysics Data System (ADS)

Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Song, Qi; Yin, Shi-Pan

2018-01-01

In this paper, we fabricated a novel copper matrix composites reinforced by carbon nanotubes (CNTs) using electroless deposition (ED) and spark plasma sintering technique. Microstructure, mechanical, electric conductivity, and thermal properties of the CNTs/Cu composites were investigated. The results show that a favorable interface containing C-O and O-Cu bond was formed between CNTs and matrix when the CNTs were coated with nano-Cu by ED method. Thus, we accomplished the uniformly dispersed CNTs in the CNTs/Cu powders and compacted composites, which eventually leads to the enhancement of the mechanical properties of the CNTs/Cu composites in the macro-scale environment. However, the interface structure can hinder the movement of carriers and free electrons and increase the interface thermal resistance, which leads to modest decrease of electrical and thermal conductivity of the CNTs/Cu composites.

Multi-Megawatt-Scale Power-Hardware-in-the-Loop Interface for Testing Ancillary Grid Services by Converter-Coupled Generation: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koralewicz, Przemyslaw J; Gevorgian, Vahan; Wallen, Robert B

Power-hardware-in-the-loop (PHIL) is a simulation tool that can support electrical systems engineers in the development and experimental validation of novel, advanced control schemes that ensure the robustness and resiliency of electrical grids that have high penetrations of low-inertia variable renewable resources. With PHIL, the impact of the device under test on a generation or distribution system can be analyzed using a real-time simulator (RTS). PHIL allows for the interconnection of the RTS with a 7 megavolt ampere (MVA) power amplifier to test multi-megawatt renewable assets available at the National Wind Technology Center (NWTC). This paper addresses issues related to themore » development of a PHIL interface that allows testing hardware devices at actual scale. In particular, the novel PHIL interface algorithm and high-speed digital interface, which minimize the critical loop delay, are discussed.« less

Multi-Megawatt-Scale Power-Hardware-in-the-Loop Interface for Testing Ancillary Grid Services by Converter-Coupled Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koralewicz, Przemyslaw J; Gevorgian, Vahan; Wallen, Robert B

Power-hardware-in-the-loop (PHIL) is a simulation tool that can support electrical systems engineers in the development and experimental validation of novel, advanced control schemes that ensure the robustness and resiliency of electrical grids that have high penetrations of low-inertia variable renewable resources. With PHIL, the impact of the device under test on a generation or distribution system can be analyzed using a real-time simulator (RTS). PHIL allows for the interconnection of the RTS with a 7 megavolt ampere (MVA) power amplifier to test multi-megawatt renewable assets available at the National Wind Technology Center (NWTC). This paper addresses issues related to themore » development of a PHIL interface that allows testing hardware devices at actual scale. In particular, the novel PHIL interface algorithm and high-speed digital interface, which minimize the critical loop delay, are discussed.« less

Geared Electromechanical Rotary Joint

NASA Technical Reports Server (NTRS)

Vranish, John M.

1994-01-01

Geared rotary joint provides low-noise ac or dc electrical contact between electrical subsystems rotating relative to each other. Designed to overcome some disadvantages of older electromechanical interfaces, especially intermittency of sliding-contact and rolling-contact electromechanical joints. Hollow, springy planetary gears provide continuous, redundant, low-noise electrical contact between inner and outer gears.

Semiconductor/dielectric interface engineering and characterization

NASA Astrophysics Data System (ADS)

Lucero, Antonio T.

The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized without exposing the sample to air. This is the first time that such a system has been reported. A special air-gap C-V probe will allow top gated measurements to be made, allowing semiconductor-dielectric interfaces to be studied during device processing.

Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

PubMed

Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

2010-06-15

The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metalGeO(2)Ge capacitors fabricated by thermal oxidation has been investigated. In the metalGeO(2)Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metalGeO(2)Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO(2)Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface.

Electro-convective versus electroosmotic instability in concentration polarization.

PubMed

Rubinstein, Isaak; Zaltzman, Boris

2007-10-31

Electro-convection is reviewed as a mechanism of mixing in the diffusion layer of a strong electrolyte adjacent to a charge-selective solid, such as an ion exchange (electrodialysis) membrane or an electrode. Two types of electro-convection in strong electrolytes may be distinguished: bulk electro-convection, due to the action of the electric field upon the residual space charge of a quasi-electro-neutral bulk solution, and convection induced by electroosmotic slip, due to electric forces acting in the thin electric double layer of either quasi-equilibrium or non-equilibrium type near the solid/liquid interface. According to recent studies, the latter appears to be the likely source of mixing in the diffusion layer, leading to 'over-limiting' conductance in electrodialysis. Electro-convection near a planar uniform charge selective solid/liquid interface sets on as a result of hydrodynamic instability of one-dimensional steady state electric conduction through such an interface. We compare the results of linear stability analysis obtained for instabilities of this kind appearing in the full electro-convective and limiting non-equilibrium electroosmotic formulations. The short- and long-wave aspects of these instabilities are discussed along with the wave number selection principles.

Decentralized and Modular Electrical Architecture

NASA Astrophysics Data System (ADS)

Elisabelar, Christian; Lebaratoux, Laurence

2014-08-01

This paper presents the studies made on the definition and design of a decentralized and modular electrical architecture that can be used for power distribution, active thermal control (ATC), standard inputs-outputs electrical interfaces.Traditionally implemented inside central unit like OBC or RTU, these interfaces can be dispatched in the satellite by using MicroRTU.CNES propose a similar approach of MicroRTU. The system is based on a bus called BRIO (Bus Réparti des IO), which is composed, by a power bus and a RS485 digital bus. BRIO architecture is made with several miniature terminals called BTCU (BRIO Terminal Control Unit) distributed in the spacecraft.The challenge was to design and develop the BTCU with very little volume, low consumption and low cost. The standard BTCU models are developed and qualified with a configuration dedicated to ATC, while the first flight model will fly on MICROSCOPE for PYRO actuations and analogue acquisitions. The design of the BTCU is made in order to be easily adaptable for all type of electric interface needs.Extension of this concept is envisaged for power conditioning and distribution unit, and a Modular PCDU based on BRIO concept is proposed.

Electric Field Control of the Ferromagnetic CaRuO3 /CaMnO3 Interface

NASA Astrophysics Data System (ADS)

Grutter, Alexander; Kirby, Brian; Gray, Matthew; Flint, Charles; Suzuki, Yuri; Borchers, Julie

2015-03-01

Electric field control of magnetism has been recognized as one of the most important goals in nanoscale magnetics research. The most popular routes towards achieving magnetoelectric (ME) coupling have focused on heterostructures incorporating multiferroics or ferroelectrics. Such studies often rely on voltage induced distortion to induce strain in the magnetic film and alter the magnetic properties. However, successful attempts to induce ME coupling without multiferroicity or magnetoelasticity remain relatively rare. The ferromagnetic interface between the antiferromagnetic insulator CaMnO3 and the paramagnetic metal CaRuO3 is a promising candidate for direct magnetization control. This interfacial ferroagnetism is stabilized through the competition between interfacial double exchange and antiferromagnetic superexchange between adjacent Mn4+ so that the system is expected to be very sensitive to small changes in interfacial carrier density. Using polarized neutron reflectometry, we have probed the electric field dependence of the interfacial magnetization of CaRuO3/CaMnO3 bilayers deposited on SrTiO3. We find that electric fields of +/-8 kV/m are sufficient to switch the interfaces from largely ferromagnetic to completely antiferromagnetic.

Theoretical Foundation for Electric-Dipole-Allowed Chiral-Specific Fluorescence Optical Rotary Dispersion (F-ORD) from Interfacial Assemblies.

PubMed

Deng, Fengyuan; Ulcickas, James R W; Simpson, Garth J

2016-11-03

Fluorescence optical rotary dispersion (F-ORD) is proposed as a novel chiral-specific and interface-specific spectroscopic method. F-ORD measurements of uniaxial assemblies are predicted to be fully electric-dipole-allowed, with corresponding increases in sensitivity to chirality relative to chiral-specific measurements in isotropic assemblies that are commonly interpreted through coupling between electric and magnetic dynamic dipoles. Observations of strong chiral sensitivity in prior single-molecule fluorescence measurements of chiral interfacial molecules are in excellent qualitative agreement with the predictions of the F-ORD mechanism and challenging to otherwise explain. F-ORD may provide methods to suppress background fluorescence in studies of biological interfaces, as the detected signal requires both polar local order and interfacial chirality. In addition, the molecular-level descriptions of the mechanisms underpinning F-ORD may also potentially apply to aid in interpreting chiral-specific Raman and surface-enhanced Raman spectroscopy measurements of uniaxially oriented assemblies, opening up opportunities for chiral-specific and interface-specific vibrational spectroscopy.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

Coexistence of superconductivity and ferromagnetism in two dimensions.

PubMed

Dikin, D A; Mehta, M; Bark, C W; Folkman, C M; Eom, C B; Chandrasekhar, V

2011-07-29

Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO(3) (LAO) and SrTiO(3) (STO), a system that has been studied intensively recently. Magnetoresistance, Hall, and electric-field dependence measurements suggest that there are two distinct bands of charge carriers that contribute to the interface conductivity. The sensitivity of properties of the interface to an electric field makes this a fascinating system for the study of the interplay between superconductivity and magnetism. © 2011 American Physical Society

Full-range electrical characteristics of WS{sub 2} transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Jatinder; Bellus, Matthew Z.; Chiu, Hsin-Ying, E-mail: chiu@ku.edu

We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit onmore » a back-gated device on SiO{sub 2}/Si substrate.« less

Media independent interface. Interface control document

NASA Technical Reports Server (NTRS)

1987-01-01

A Media Independent Interface (MII) is specified, using current standards in the industry. The MII is described in hierarchical fashion. At the base are IEEE/International Standards Organization (ISO) documents (standards) which describe the functionality of the software modules or layers and their interconnection. These documents describe primitives which are to transcent the MII. The intent of the MII is to provide a universal interface to one or more Media Access Contols (MACs) for the Logical Link Controller and Station Manager. This interface includes both a standardized electrical and mechanical interface and a standardized functional specification which defines the services expected from the MAC.

Stability of horizontal viscous fluid layers in a vertical arbitrary time periodic electric field

NASA Astrophysics Data System (ADS)

Bandopadhyay, Aditya; Hardt, Steffen

2017-12-01

The stability of a horizontal interface between two viscous fluids, one of which is conducting and the other is dielectric, acted upon by a vertical time-periodic electric field is considered theoretically. The two fluids are bounded by electrodes separated by a finite distance. For an applied ac electric field, the unstable interface deforms in a time periodic manner, owing to the time dependent Maxwell stress, and is characterized by the oscillation frequency which may or may not be the same as the frequency of the ac electric field. The stability curve, which relates the critical voltage, manifested through the Mason number—the ratio of normal electric stress and viscous stress, and the instability wavenumber at the onset of the instability, is obtained by means of the Floquet theory for a general arbitrary time periodic electric field. The limit of vanishing viscosities is shown to be in excellent agreement with the marginal stability curves predicted by means of a Mathieu equation. The influence of finite viscosity and electrode separation is discussed in relation to the ideal case of inviscid fluids. The methodology to obtain the marginal stability curves developed here is applicable to any arbitrary but time periodic signal, as demonstrated for the case of a signal with two different frequencies, and four different frequencies with a dc offset. The mode coupling in the interfacial normal stress leads to appearance of harmonic and subharmonic modes, characterized by the frequency of the oscillating interface at an integral or half-integral multiple of the applied frequency, respectively. This is in contrast to the application of a voltage with a single frequency which always leads to a harmonic mode oscillation of the interface. Whether a harmonic or subharmonic mode is the most unstable one depends on details of the excitation signal.

Standardized Modular Power Interfaces for Future Space Explorations Missions

NASA Technical Reports Server (NTRS)

Oeftering, Richard

2015-01-01

Earlier studies show that future human explorations missions are composed of multi-vehicle assemblies with interconnected electric power systems. Some vehicles are often intended to serve as flexible multi-purpose or multi-mission platforms. This drives the need for power architectures that can be reconfigured to support this level of flexibility. Power system developmental costs can be reduced, program wide, by utilizing a common set of modular building blocks. Further, there are mission operational and logistics cost benefits of using a common set of modular spares. These benefits are the goals of the Advanced Exploration Systems (AES) Modular Power System (AMPS) project. A common set of modular blocks requires a substantial level of standardization in terms of the Electrical, Data System, and Mechanical interfaces. The AMPS project is developing a set of proposed interface standards that will provide useful guidance for modular hardware developers but not needlessly constrain technology options, or limit future growth in capability. In 2015 the AMPS project focused on standardizing the interfaces between the elements of spacecraft power distribution and energy storage. The development of the modular power standard starts with establishing mission assumptions and ground rules to define design application space. The standards are defined in terms of AMPS objectives including Commonality, Reliability-Availability, Flexibility-Configurability and Supportability-Reusability. The proposed standards are aimed at assembly and sub-assembly level building blocks. AMPS plans to adopt existing standards for spacecraft command and data, software, network interfaces, and electrical power interfaces where applicable. Other standards including structural encapsulation, heat transfer, and fluid transfer, are governed by launch and spacecraft environments and bound by practical limitations of weight and volume. Developing these mechanical interface standards is more difficult but an essential part of defining physical building blocks of modular power. This presentation describes the AMPS projects progress towards standardized modular power interfaces.

Assessment of the electrochemical effects of pulsed electric fields in a biological cell suspension.

PubMed

Chafai, Djamel Eddine; Mehle, Andraž; Tilmatine, Amar; Maouche, Bachir; Miklavčič, Damijan

2015-12-01

Electroporation of cells is successfully used in biology, biotechnology and medicine. Practical problems still arise in the electroporation of cells in suspension. For example, the determination of cell electroporation is still a demanding and time-consuming task. Electric pulses also cause contamination of the solution by the metal released from the electrodes and create local enhancements of the electric field, leading to the occurrence of electrochemical reactions at the electrode/electrolyte interface. In our study, we investigated the possibility of assessing modifications to the cell environment caused by pulsed electric fields using electrochemical impedance spectroscopy. We designed an experimental protocol to elucidate the mechanism by which a pulsed electric field affects the electrode state in relation to different electrolyte conductivities at the interface. The results show that a pulsed electric field affects electrodes and its degree depends on the electrolyte conductivity. Evolution of the electrochemical reaction rate depends on the initial free charges and those generated by the pulsed electric field. In the presence of biological cells, the initial free charges in the medium are reduced. The electrical current path at low frequency is longer, i.e., conductivity is decreased, even in the presence of increased permeability of the cell membrane created by the pulsed electric field. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells

NASA Astrophysics Data System (ADS)

Shugurov, K. U.; Mozharov, A. M.; Sapunov, G. A.; Fedorov, V. V.; Bolshakov, A. D.; Mukhin, I. S.

2018-03-01

Volt-ampere and spectral characteristics of GaN/Si solar cell samples differing in interface layer preparation are obtained and analyzed. External quantum efficiency curves are experimentally determined via excitation with a 532 nm incident radiation wavelength. It is demonstrated that interface preparation has a significant influence on photovoltaic characteristics of the studied samples.

Exploring Novel Spintronic Responses from Advanced Functional Organic Materials

DTIC Science & Technology

2015-11-12

March 20-22, 2014 (8) Interface enhanced photovoltaic and Seebeck effects in organic solar cells and thermoelectric devices DISTRIBUTION A...on thermoelectric effects by using polymer/metal interface-controllable thermal and electric conductions. The project explored a new strategy by using...following major breakthroughs on molecular metamaterials by using spin radicals and on thermoelectric effects by using polymer/metal interface

Viability of litter-stored Pinus taeda L. seeds after simulated prescribed winter burns

Treesearch

Michael D. Cain; Michael G. Shelton

1998-01-01

Stratified loblolly pine (Pinus taeda L.) seeds were placed at three depths in a reconstructed forest floor and subjected to simulated prescribed winter burns. Within the forest floor, pine seeds were placed at the L/upper-F interface, upper-F/lower-F interface, and lower-F/mineral-soil interface. Wind was generated by electric box-fans. Seeds that...

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

NASA Astrophysics Data System (ADS)

Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

2016-04-01

The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

Selective electrical interfaces with the nervous system.

PubMed

Rutten, Wim L C

2002-01-01

To achieve selective electrical interfacing to the neural system it is necessary to approach neuronal elements on a scale of micrometers. This necessitates microtechnology fabrication and introduces the interdisciplinary field of neurotechnology, lying at the juncture of neuroscience with microtechnology. The neuroelectronic interface occurs where the membrane of a cell soma or axon meets a metal microelectrode surface. The seal between these may be narrow or may be leaky. In the latter case the surrounding volume conductor becomes part of the interface. Electrode design for successful interfacing, either for stimulation or recording, requires good understanding of membrane phenomena, natural and evoked action potential generation, volume conduction, and electrode behavior. Penetrating multimicroelectrodes have been produced as one-, two-, and three-dimensional arrays, mainly in silicon, glass, and metal microtechnology. Cuff electrodes circumvent a nerve; their selectivity aims at fascicles more than at nerve fibers. Other types of electrodes are regenerating sieves and cone-ingrowth electrodes. The latter may play a role in brain-computer interfaces. Planar substrate-embedded electrode arrays with cultured neural cells on top are used to study the activity and plasticity of developing neural networks. They also serve as substrates for future so-called cultured probes.

Spin-polarized current injection induced magnetic reconstruction at oxide interface

DOE PAGES

Fang, F.; Yin, Y. W.; Li, Qi; ...

2017-01-04

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO 3/La 0.5Ca 0.5MnO 3/La 0.7Sr 0.3MnO 3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition ofmore » the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. As a result, the effect is robust and may serve as a viable route for electronic and spintronic applications.« less

Spin-polarized current injection induced magnetic reconstruction at oxide interface

NASA Astrophysics Data System (ADS)

Fang, F.; Yin, Y. W.; Li, Qi; Lüpke, G.

2017-01-01

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications.

System and methods for reducing harmonic distortion in electrical converters

DOEpatents

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2013-12-03

Systems and methods are provided for delivering energy using an energy conversion module. An exemplary method for delivering energy from an input interface to an output interface using an energy converison module coupled between the input interface and the output interface comprises the steps of determining an input voltage reference for the input interface based on a desired output voltage and a measured voltage and the output interface, determining a duty cycle control value based on a ratio of the input voltage reference and the measured voltage, operating one or more switching elements of the energy conversion module to deliver energy from the input interface to the output interface to the output interface with a duty cycle influenced by the dute cycle control value.

Electrode-electrolyte interface model of tripolar concentric ring electrode and electrode paste.

PubMed

Nasrollaholhosseini, Seyed Hadi; Steele, Preston; Besio, Walter G

2016-08-01

Electrodes are used to transform ionic currents to electrical currents in biological systems. Modeling the electrode-electrolyte interface could help to optimize the performance of the electrode interface to achieve higher signal to noise ratios. There are previous reports of accurate models for single-element biomedical electrodes. In this paper we develop a model for the electrode-electrolyte interface for tripolar concentric ring electrodes (TCRE) that are used to record brain signals.

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

PubMed

Suyatin, Dmitry B; Jain, Vishal; Nebol'sin, Valery A; Trägårdh, Johanna; Messing, Maria E; Wagner, Jakob B; Persson, Olof; Timm, Rainer; Mikkelsen, Anders; Maximov, Ivan; Samuelson, Lars; Pettersson, Håkan

2014-01-01

Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~10(17) m(-2)) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

NASA Astrophysics Data System (ADS)

Teubert, J.; Koslowski, S.; Lippert, S.; Schäfer, M.; Wallys, J.; Dimitrakopulos, G.; Kehagias, Th.; Komninou, Ph.; Das, A.; Monroy, E.; Eickhoff, M.

2013-08-01

We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence is strongly affected by surface potential variations, i.e., it increases exponentially with cathodic bias and acidic pH values. The results cannot be explained by a modification of intra-dot polarization induced electric fields via the quantum confined Stark effect but are attributed to the suppression/enhancement of non-radiative recombination processes, i.e., mainly hole transfer into the electrolyte. The results establish a link between the photoluminescence intensity and the magnitude of electric fields at the semiconductor/electrolyte interface.

Method and Apparatus for Assessment of Changes in Intracranial Pressure

NASA Technical Reports Server (NTRS)

Yost, William T. (Inventor); Cantrell, John H. (Inventor)

2002-01-01

A non-invasive method and apparatus for monitoring changes in intracranial pressure which removes extracranial effects from the measurements. The method and apparatus can include the supplying of a fixed frequency electrical output to a transducer coupled to the patient's head, thereby generating an acoustical tone burst in the patient's head which generates a first echo and a second echo, the first echo reflecting from a first interface in the side of the patient's head coupled to the transducer, and the second echo reflecting from a second interface at the opposite side of the patient's head. The first and second echoes are received by the transducer which can generate a first electrical signal and a second electrical signal, wherein the first and second electrical signals vary in accordance with the corresponding first and second echoes. The counterbalancing phase shifts required to bring about quadrature between each of the first and second electrical signals and the fixed frequency electrical output can be measured, and values for the change in intracranial distance based on the changes in the counterbalancing phase shifts can be obtained.

Nanoscale content-addressable memory

NASA Technical Reports Server (NTRS)

Davis, Bryan (Inventor); Principe, Jose C. (Inventor); Fortes, Jose (Inventor)

2009-01-01

A combined content addressable memory device and memory interface is provided. The combined device and interface includes one or more one molecular wire crossbar memories having spaced-apart key nanowires, spaced-apart value nanowires adjacent to the key nanowires, and configurable switches between the key nanowires and the value nanowires. The combination further includes a key microwire-nanowire grid (key MNG) electrically connected to the spaced-apart key nanowires, and a value microwire-nanowire grid (value MNG) electrically connected to the spaced-apart value nanowires. A key or value MNGs selects multiple nanowires for a given key or value.

Implantable neurotechnologies: bidirectional neural interfaces--applications and VLSI circuit implementations.

PubMed

Greenwald, Elliot; Masters, Matthew R; Thakor, Nitish V

2016-01-01

A bidirectional neural interface is a device that transfers information into and out of the nervous system. This class of devices has potential to improve treatment and therapy in several patient populations. Progress in very large-scale integration has advanced the design of complex integrated circuits. System-on-chip devices are capable of recording neural electrical activity and altering natural activity with electrical stimulation. Often, these devices include wireless powering and telemetry functions. This review presents the state of the art of bidirectional circuits as applied to neuroprosthetic, neurorepair, and neurotherapeutic systems.

Bidirectional Neural Interfaces

PubMed Central

Masters, Matthew R.; Thakor, Nitish V.

2016-01-01

A bidirectional neural interface is a device that transfers information into and out of the nervous system. This class of devices has potential to improve treatment and therapy in several patient populations. Progress in very-large-scale integration (VLSI) has advanced the design of complex integrated circuits. System-on-chip (SoC) devices are capable of recording neural electrical activity and altering natural activity with electrical stimulation. Often, these devices include wireless powering and telemetry functions. This review presents the state of the art of bidirectional circuits as applied to neuroprosthetic, neurorepair, and neurotherapeutic systems. PMID:26753776

Adaptive displays and controllers using alternative feedback.

PubMed

Repperger, D W

2004-12-01

Investigations on the design of haptic (force reflecting joystick or force display) controllers were conducted by viewing the display of force information within the context of several different paradigms. First, using analogies from electrical and mechanical systems, certain schemes of the haptic interface were hypothesized which may improve the human-machine interaction with respect to various criteria. A discussion is given on how this interaction benefits the electrical and mechanical system. To generalize this concept to the design of human-machine interfaces, three studies with haptic mechanisms were then synthesized and analyzed.

Discharging a DC bus capacitor of an electrical converter system

DOEpatents

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2014-10-14

A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

PubMed Central

Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

2015-01-01

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

NREL, Mercedes-Benz Optimizing Refueling Experience for Fuel Cell Electric

Science.gov Websites

optimize the customer refueling experience for fuel cell electric vehicles. Photo of a Mercedes-Benz B fueling protocols, with an eye toward optimizing the refueling station's customer interface, making the

Science Notes.

ERIC Educational Resources Information Center

Murray, A. J. S.; And Others

1988-01-01

Presents 31 science activities for use with high school or college science classes. Topics included are: chromatography, ecology, invertebrates, enzymes, genetics, botany, creep, crystals, diffusion, computer interfaces, acid rain, teaching techniques, chemical reactions, waves, electric fields, rainbows, electricity, magnetic fields, and a Pitot…

Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Paik, Seoyoung

A study of spin-dependent electronic transitions at the (111) oriented phosphorous doped crystalline silicon (c-Si) to silicon dioxide (SiO 2) interface is presented for [31P] = 1015 cm-3 and [31P] = 1016 cm -3 and a temperature range between T ≈ 5K and T ≈ 15K. Using pulsed electrically detected magnetic resonance (pEDMR), spin-dependent transitions involving 31P donor states and two different interface states are observed, namely (i) Pb centers which can be identified by their characteristic anisotropy and (ii) the E' center which is attributed to defects of the near interface SiO 2 bulk. Correlation measurements of the dynamics of spin-dependent recombination confirm that previously proposed transitions between 31P and the interface defects take place. The influence of these near interface transitions on the 31P donor spin coherence time T 2 as well as the donor spin-lattice relaxation time T 1 is then investigated by comparison of spin Hahn echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR measurements, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that the T2 times of both interface states and 31P donor electrons spins in proximity of them are consistently shorter than the T1 times, and both T2 and T1 times of the near interface donors are reduced by several orders of magnitude from those in the bulk, at T ≤ 13 K. The T 2 times of the 31P donor electrons are in agreement with the prediction by De Sousa that they are limited by interface defect-induced field noise. To further investigate the dynamic properties of spin-dependent near interface processes, electrical detection of spin beat oscillation between resonantly induced spin-Rabi nutation is conducted at the phosphorous doped (1016cm-3) Si(111)/SiO2 interface. Predictions of Rabi beat oscillations based on several different spin-pair models are compared with measured Rabi beat nutation data. Due to the g-factor anisotropy of the Pb center (a silicon surface dangling bond), one can tune intra-pair Larmor frequency differences (Larmor separations) by orientation of the crystal with regard to an external magnetic field. Since Larmor separation governs the number of beating spin-pairs, crystal orientation can control the beat current. This is used to identify spin states that are paired by mutual electronic transitions. Based on the agreement between hypothesis and data, the experiments confirm the presence of the previously observed 31P-P b transition and the previously hypothesized P b to near interface SiO2 bulk state (E' center) transition.

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment.

PubMed

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-12-16

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor.

Evaluation of GeO desorption behavior in the metal∕GeO2∕Ge structure and its improvement of the electrical characteristics

PubMed Central

Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

2010-01-01

The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metal∕GeO2∕Ge capacitors fabricated by thermal oxidation has been investigated. In the metal∕GeO2∕Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metal∕GeO2∕Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO2∕Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface. PMID:20644659

Assembly of ordered colloidal aggregrates by electric-field-induced fluid flow

PubMed Central

Yeh, Syun-Ru; Seul, Michael; Shraiman, Boris I.

2017-01-01

Suspensions of colloidal particles form a variety of ordered planar structures at an interface in response to an a.c. or d.c. electric field applied normal to the interface1–3. This field-induced pattern formation can be useful, for example, in the processing of materials. Here we explore the origin of the ordering phenomenon. We present evidence suggesting that the long-ranged attraction between particles which causes aggregation is mediated by electric-field-induced fluid flow. We have imaged an axially symmetric flow field around individual particles on a uniform electrode surface. The flow is induced by distortions in the applied electric field owing to inhomogeneities in the ‘double layer’ of ions and counterions at the electrode surface. The beads themselves can create these inhomogeneities, or alternatively, we can modify the electrode surfaces by lithographic patterning so as to introduce specified patterns into the aggregated structures. PMID:28943661

Intelligent sensor and controller framework for the power grid

DOEpatents

Akyol, Bora A.; Haack, Jereme Nathan; Craig, Jr., Philip Allen; Tews, Cody William; Kulkarni, Anand V.; Carpenter, Brandon J.; Maiden, Wendy M.; Ciraci, Selim

2015-07-28

Disclosed below are representative embodiments of methods, apparatus, and systems for monitoring and using data in an electric power grid. For example, one disclosed embodiment comprises a sensor for measuring an electrical characteristic of a power line, electrical generator, or electrical device; a network interface; a processor; and one or more computer-readable storage media storing computer-executable instructions. In this embodiment, the computer-executable instructions include instructions for implementing an authorization and authentication module for validating a software agent received at the network interface; instructions for implementing one or more agent execution environments for executing agent code that is included with the software agent and that causes data from the sensor to be collected; and instructions for implementing an agent packaging and instantiation module for storing the collected data in a data container of the software agent and for transmitting the software agent, along with the stored data, to a next destination.

Intelligent sensor and controller framework for the power grid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Bora A.; Haack, Jereme Nathan; Craig, Jr., Philip Allen

Disclosed below are representative embodiments of methods, apparatus, and systems for monitoring and using data in an electric power grid. For example, one disclosed embodiment comprises a sensor for measuring an electrical characteristic of a power line, electrical generator, or electrical device; a network interface; a processor; and one or more computer-readable storage media storing computer-executable instructions. In this embodiment, the computer-executable instructions include instructions for implementing an authorization and authentication module for validating a software agent received at the network interface; instructions for implementing one or more agent execution environments for executing agent code that is included with themore » software agent and that causes data from the sensor to be collected; and instructions for implementing an agent packaging and instantiation module for storing the collected data in a data container of the software agent and for transmitting the software agent, along with the stored data, to a next destination.« less

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki

By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection bymore » accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.« less

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

NASA Astrophysics Data System (ADS)

Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

2017-04-01

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

Robust isothermal electric control of exchange bias at room temperature

NASA Astrophysics Data System (ADS)

Binek, Christian

2011-03-01

Voltage-controlled spintronics is of particular importance to continue progress in information technology through reduced power consumption, enhanced processing speed, integration density, and functionality in comparison with present day CMOS electronics. Almost all existing and prototypical solid-state spintronic devices rely on tailored interface magnetism, enabling spin-selective transmission or scattering of electrons. Controlling magnetism at thin-film interfaces, preferably by purely electrical means, is a key challenge to better spintronics. Currently, most attempts to electrically control magnetism focus on potentially large magnetoelectric effects of multiferroics. We report on our interest in magnetoelectric Cr 2 O3 (chromia). Robust isothermal electric control of exchange bias is achieved at room temperature in perpendicular anisotropic Cr 2 O3 (0001)/CoPd exchange bias heterostructures. This discovery promises significant implications for potential spintronics. From the perspective of basic science, our finding serves as macroscopic evidence for roughness-insensitive and electrically controllable equilibrium boundary magnetization in magnetoelectric antiferromagnets. The latter evolves at chromia (0001) surfaces and interfaces when chromia is in one of its two degenerate antiferromagnetic single domain states selected via magnetoelectric annealing. Theoretical insight into the boundary magnetization and its role in electrically controlled exchange bias is gained from first-principles calculations and general symmetry arguments. Measurements of spin-resolved ultraviolet photoemission, magnetometry at Cr 2 O3 (0001) surfaces, and detailed investigations of the unique exchange bias properties of Cr 2 O3 (0001)/CoPd including its electric controllability provide macroscopically averaged information about the boundary magnetization of chromia. Laterally resolved X-ray PEEM and temperature dependent MFM reveal detailed microscopic information of the chromia (0001) surface magnetization and provide a coherent interpretation of our results on robust isothermal electric control of exchange bias. The latter promise a new route towards purely voltage-controlled spintronics and an exciting way to electrically control magnetism. Financial support by NSF through Nebraska MRSEC, SRC/NSF Supplement to Nebraska MRSEC, CAREER DMR-0547887, NRI, and Cottrell Research Corporation.

WASTE HANDLING BUILDING ELECTRICAL SYSTEM DESCRIPTION DOCUMENT

DOE Office of Scientific and Technical Information (OSTI.GOV)

S.C. Khamamkar

2000-06-23

The Waste Handling Building Electrical System performs the function of receiving, distributing, transforming, monitoring, and controlling AC and DC power to all waste handling building electrical loads. The system distributes normal electrical power to support all loads that are within the Waste Handling Building (WHB). The system also generates and distributes emergency power to support designated emergency loads within the WHB within specified time limits. The system provides the capability to transfer between normal and emergency power. The system provides emergency power via independent and physically separated distribution feeds from the normal supply. The designated emergency electrical equipment will bemore » designed to operate during and after design basis events (DBEs). The system also provides lighting, grounding, and lightning protection for the Waste Handling Building. The system is located in the Waste Handling Building System. The system consists of a diesel generator, power distribution cables, transformers, switch gear, motor controllers, power panel boards, lighting panel boards, lighting equipment, lightning protection equipment, control cabling, and grounding system. Emergency power is generated with a diesel generator located in a QL-2 structure and connected to the QL-2 bus. The Waste Handling Building Electrical System distributes and controls primary power to acceptable industry standards, and with a dependability compatible with waste handling building reliability objectives for non-safety electrical loads. It also generates and distributes emergency power to the designated emergency loads. The Waste Handling Building Electrical System receives power from the Site Electrical Power System. The primary material handling power interfaces include the Carrier/Cask Handling System, Canister Transfer System, Assembly Transfer System, Waste Package Remediation System, and Disposal Container Handling Systems. The system interfaces with the MGR Operations Monitoring and Control System for supervisory monitoring and control signals. The system interfaces with all facility support loads such as heating, ventilation, and air conditioning, office, fire protection, monitoring and control, safeguards and security, and communications subsystems.« less

Complex oxide ferroelectrics: Electrostatic doping by domain walls

DOE PAGES

Maksymovych, Petro

2015-06-19

Electrically conducting interfaces can form, rather unexpectedly, by breaking the translational symmetry of electrically insulating complex oxides. For example, a nanometre-thick heteroepitaxial interface between electronically insulating LaAlO 3 and SrTiO 3 supports a 2D electron gas1 with high mobility of >1,000 cm 2 V -1 s -1 (ref. 2). Such interfaces can exhibit magnetism, superconductivity and phase transitions that may form the functional basis of future electronic devices2. A peculiar conducting interface can be created within a polar ferroelectric oxide by breaking the translational symmetry of the ferroelectric order parameter and creating a so-called ferroelectric domain wall (Fig. 1a,b). Ifmore » the direction of atomic displacements changes at the wall in such a way as to create a discontinuity in the polarization component normal to the wall (Fig. 1a), the domain wall becomes electrostatically charged. It may then attract compensating mobile charges of opposite sign produced by dopant ionization, photoexcitation or other effects, thereby locally, electrostatically doping the host ferroelectric film. In contrast to conductive interfaces between epitaxially grown oxides, domain walls can be reversibly created, positioned and shaped by electric fields, enabling reconfigurable circuitry within the same volume of the material. Now, writing in Nature Nanotechnology, Arnaud Crassous and colleagues at EPFL and University of Geneva demonstrate control and stability of charged conducting domain walls in ferroelectric thin films of BiFeO 3 down to the nanoscale.« less

Creeping flashover characteristics improvement of nanofluid/pressboard system with TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Huang, Meng; Wang, Lei; Ge, Yang; Lv, Yu-zhen; Qi, Bo; Li, Cheng-rong

2018-03-01

Creeping flashover easily occurs at the interface between oil and pressboard in transformer and thus results in outage of power transmission system. Investigations have shown that creeping flashover characteristics at oil/pressboard interface can be improved by the addition of TiO2 nanoparticles, but the mechanism is still not thoroughly known. In this work, creeping flashover performance at nanofluid/pressboard interface modified by different sizes of nanoparticles were studied and the mechanism was presented as well. Nanofluids with the same concentration but with different sizes of TiO2 nanoparticles were prepared, and pressboards impregnated with them were prepared as well. After that, their creeping flashover characteristics were measured and compared. Nanoparticle's size affected the creeping flashover performance along oil/pressboard greatly under both AC and lightning impulse voltages. The highest creeping flashover voltage can be enhanced by as high as 12.2% and 32.0% respectively. The underlying electric field distribution and charge transportation behaviors were analyzed to demonstrate the influence of nanoparticle's size. By the addition of nanoparticles with a smaller size, the dielectric constant of nanofluid was increased closer to that of the pressboard, thus they were matched better. Moreover, charge was easier to dissipate from the oil/pressboard interface and electric field distortion at the interface was consequently reduced. Therefore, the electric field was more like a uniform field and the forward development of flashover was more difficult, leading to a better performance of creeping flashover of oil-impregnated pressboard.

A Microcomputer Interface for External Circuit Control.

ERIC Educational Resources Information Center

Gorham, D. A.

1983-01-01

Describes an interface designed to meet the requirements of an instrumentation teaching laboratory, particularly to develop computer-controlled digital circuitry while exploiting electrical drive properties of common transistor-transistor logic (TTL) devices, minimizing cost/number of components. Discusses decoding for Pet, switches, lights, and…

3D hybrid electrode structure as implantable interface for a vestibular neural prosthesis in humans.

PubMed

Hoffmann, Klaus-P; Poppendieck, Wigand; Tätzner, Simon; DiGiovanna, Jack; Kos, Maria Izabel; Guinand, Nils; Guyot, Jean-P; Micera, Silvestro

2011-01-01

Implantable interfaces are essential components of vestibular neural prostheses. They interface the biological system with electrical stimulation that is used to restore transfer of vestibular information. Regarding the anatomical situation special 3D structures are required. In this paper, the design and the manufacturing process of a novel 3D hybrid microelectrode structure as interface to the human vestibular system are described. Photolithography techniques, assembling technology and rapid prototyping are used for manufacturing.

Device USB interface and software development for electric parameter measuring instrument

NASA Astrophysics Data System (ADS)

Li, Deshi; Chen, Jian; Wu, Yadong

2003-09-01

Aimed at general devices development, this paper discussed the development of USB interface and software development. With an example, using PDIUSBD12 which support parallel interface, the paper analyzed its technical characteristics. Designed different interface circuit with 80C52 singlechip microcomputer and TMS320C54 series digital signal processor, analyzed the address allocation, register access. According to USB1.1 standard protocol, designed the device software and application layer protocol. The paper designed the data exchange protocol, and carried out system functions.

Electron gas at the interface between two antiferromagnetic insulating manganites

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Salafranca, J.; Brey, L.

2008-07-01

We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3 , a strong correlated insulator, and CaMnO3 , a band insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron-gas density by selective doping is also discussed.

Tool Changer For Robot

NASA Technical Reports Server (NTRS)

Voellmer, George M.

1992-01-01

Mechanism enables robot to change tools on end of arm. Actuated by motion of robot: requires no additional electrical or pneumatic energy to make or break connection between tool and wrist at end of arm. Includes three basic subassemblies: wrist interface plate attached to robot arm at wrist, tool interface plate attached to tool, and holster. Separate tool interface plate and holster provided for each tool robot uses.

Analysis of steady-state salt-water upconing with application at Truro well field, Cape Cod, Massachusetts

USGS Publications Warehouse

Reilly, T.E.; Frimpter, M.H.; LeBlanc, D.R.; Goodman, A.S.

1987-01-01

Sharp interface methods have been used successfully to describe the physics of upconing. A finite-element model is developed to simulate a sharp interface for determination of the steady-state position of the interface and maximum permissible well discharges. The model developed is compared to previous published electric-analog model results of Bennett and others (1968). -from Authors

Electrochemistry and the Earth's Core-Mantle Boundary

NASA Astrophysics Data System (ADS)

Kavner, A.; Walker, D.

2001-12-01

The Earth's core-mantle boundary consists of a highly heterogeneous metal-oxide interface subjected to high temperatures, pressures, and additionally, to the presence of a temporally- and spatially-varying electrical field generated by the outer core dynamo. An understanding of the core-mantle boundary should include the nature of its electrical behavior, its electrically induced chemical partitioning, and any resultant core-mantle dynamic coupling. To this end, we have developed a method to measure the electrical behavior of metal-silicate interfaces at high pressures (15-25 kbar) and temperatures (1300-1400° C) in a piston-cylinder apparatus. Platinum electrical leads are placed at each end of the sample, which consists of a layer of iron and/or iron alloy below a layer of silicate. The sample is enclosed in a sintered MgO chamber which is then surrounded by a metal Faraday cage, allowing the sample to be electrically insulated from the AC field of the graphite heater. The platinum electric leads are threaded through the thermocouple tube and connected with an HP4284A LCR meter to measure AC impedance, or to a DC power supply to apply a field such that either the silicate or the metal end is the anode (+). AC impedance measurements performed in-situ on samples consisting of Fe, Fe-Ni-S, and a basalt-olivine mixture in series show that conductivity is strongly dependent on the electrical polarization of the silicate relative to the sulfide. When the silicate is positively charged (silicate is the anode) and when there is no applied charge, the probe-to-probe resistance displays semiconductor behavior, with conductivity ( ~10-2 S/cm) strongly thermally activated. However, when the electrical polarity is reversed, and the sulfide is the anode, the electrical conductivity between the two probes increases dramatically (to ~1 S/cm) over timescales of minutes. If the polarity is removed or reversed, the conductivity returns to its original values over similar timescales. A second set of experiments examined the behavior of iron-silicate interfaces subjected to electric fields of 1-10 V, applied for times ranging from several minutes to several days. The samples were quenched from high temperatures, mounted, and examined using both light and electron microscopy. When the iron/iron-sulfide end is charged positively (+1-2 V) with respect to the silicate, oxides form around the platinum electrode embedded within the iron metal, suggesting the reaction Fe->Fe+2+2e- occurs in the metal. When the electric field is reversed, the silicate and MgO surrounding the + electrode turns red, implying the reaction Fe+2\\rightarrowFe^{+3}+e^{-}$ occurs at the silicate (anode end) of the sample. The richness of electrical and electrically activated chemical behavior observed at metal-silicate interfaces may be relevant to the Earth's core mantle boundary.

Junction Quality of SnO2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling.

PubMed

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; Gorman, Brian P; Ye, Jichun; Jiang, Chun-Sheng; Yan, Yanfa; Al-Jassim, Mowafak M

2017-11-08

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO 2 -based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; (2) cells with an intrinsic SnO 2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO 2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2 -ESL < SnO 2 + SAM; this sequence explains the improvements of the fill factor (FF) and open-circuit voltage (V oc ). The improvement of the FF from the FTO to SnO 2 -ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO 2 -based ESL material quality and the ESL/PS interface.

Junction Quality of SnO 2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling

DOE PAGES

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; ...

2017-10-13

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on cross-section of SnO 2-based perovskite solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having identical device structure: cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; cells with an intrinsic SnO 2 thin layer on the top of FTO as anmore » effective ESL; and cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2-ESL < SnO 2+SAM; this sequence explains the improvements of fill factor (FF) and open-circuit voltage ( V oc). The improvement of FF from the FTO to SnO 2-ESL cells may result from the reduction in voltage lose at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding a SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. Furthermore, these nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.« less

Junction Quality of SnO 2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on cross-section of SnO 2-based perovskite solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having identical device structure: cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; cells with an intrinsic SnO 2 thin layer on the top of FTO as anmore » effective ESL; and cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO 2-ESL < SnO 2+SAM; this sequence explains the improvements of fill factor (FF) and open-circuit voltage ( V oc). The improvement of FF from the FTO to SnO 2-ESL cells may result from the reduction in voltage lose at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding a SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. Furthermore, these nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.« less

Controlling Emergent Ferromagnetism at Complex Oxide Interfaces

NASA Astrophysics Data System (ADS)

Grutter, Alexander

The emergence of complex magnetic ground states at ABO3 perovskite heterostructure interfaces is among the most promising routes towards highly tunable nanoscale materials for spintronic device applications. Despite recent progress, isolating and controlling the underlying mechanisms behind these emergent properties remains a highly challenging materials physics problems. In particular, generating and tuning ferromagnetism localized at the interface of two non-ferromagnetic materials is of fundamental and technological interest. An ideal model system in which to study such effects is the CaRuO3/CaMnO3 interface, where the constituent materials are paramagnetic and antiferromagnetic in the bulk, respectively. Due to small fractional charge transfer to the CaMnO3 (0.07 e-/Mn) from the CaRuO3, the interfacial Mn ions are in a canted antiferromagnetic state. The delicate balance between antiferromagnetic superexchange and ferromagnetic double exchange results in a magnetic ground state which is extremely sensitive to perturbations. We exploit this sensitivity to achieve control of the magnetic interface, tipping the balance between ferromagnetic and antiferromagnetic interactions through octahedral connectivity modification. Such connectivity effects are typically tightly confined to interfaces, but by targeting a purely interfacial emergent magnetic system, we achieve drastic alterations to the magnetic ground state. These results demonstrate the extreme sensitivity of the magnetic state to the magnitude of the charge transfer, suggesting the potential for direct electric field control. We achieve such electric field control through direct back gating of a CaRuO3/CaMnO3 bilayer. Thus, the CaRuO3/CaMnO3 system provides new insight into how charge transfer, interfacial symmetry, and electric fields may be used to control ferromagnetism at the atomic scale.

An analytical solution to assess the SH seismoelectric response of the vadose zone

NASA Astrophysics Data System (ADS)

Monachesi, L. B.; Zyserman, F. I.; Jouniaux, L.

2018-03-01

We derive an analytical solution of the seismoelectric conversions generated in the vadose zone, when this region is crossed by a pure shear horizontal (SH) wave. Seismoelectric conversions are induced by electrokinetic effects linked to relative motions between fluid and porous media. The considered model assumes a one-dimensional soil constituted by a single layer on top of a half space in contact at the water table, and a shearing force located at the earth's surface as the wave source. The water table is an interface expected to induce a seismoelectric interfacial response (IR). The top layer represents a porous rock which porous space is partially saturated by water and air, while the half-space is completely saturated with water, representing the saturated zone. The analytical expressions for the coseismic fields and the interface responses, both electric and magnetic, are derived by solving Pride's equations with proper boundary conditions. An approximate analytical expression of the solution is also obtained, which is very simple and applicable in a fairly broad set of situations. Hypothetical scenarios are proposed to study and analyse the dependence of the electromagnetic fields on various parameters of the medium. An analysis of the approximate solution is also made together with a comparison to the exact solution. The main result of the present analysis is that the amplitude of the interface response generated at the water table is found to be proportional to the jump in the electric current density, which in turn depends on the saturation contrast, poro-mechanical and electrical properties of the medium and on the amplitude of the solid displacement produced by the source. This result is in agreement with the one numerically obtained by the authors, which has been published in a recent work. We also predict the existence of an interface response located at the surface, and that the electric interface response is several orders of magnitude bigger than the electric coseismic field, whereas it is the opposite using compressional waves as shown by theoretical and experimental results. This fact should encourage the performance of field and laboratory tests to check the viability of SHTE seismoelectrics as a near surface prospecting/monitoring tool.

An analytical solution to assess the SH seismoelectric response of the vadose zone

NASA Astrophysics Data System (ADS)

Monachesi, L. B.; Zyserman, F. I.; Jouniaux, L.

2018-06-01

We derive an analytical solution of the seismoelectric conversions generated in the vadose zone, when this region is crossed by a pure shear horizontal (SH) wave. Seismoelectric conversions are induced by electrokinetic effects linked to relative motions between fluid and porous media. The considered model assumes a 1D soil constituted by a single layer on top of a half-space in contact at the water table, and a shearing force located at the earth's surface as the wave source. The water table is an interface expected to induce a seismoelectric interfacial response (IR). The top layer represents a porous rock in which porous space is partially saturated by water and air, while the half-space is completely saturated with water, representing the saturated zone. The analytical expressions for the coseismic fields and the interface responses, both electric and magnetic, are derived by solving Pride's equations with proper boundary conditions. An approximate analytical expression of the solution is also obtained, which is very simple and applicable in a fairly broad set of situations. Hypothetical scenarios are proposed to study and analyse the dependence of the electromagnetic fields on various parameters of the medium. An analysis of the approximate solution is also made together with a comparison to the exact solution. The main result of the present analysis is that the amplitude of the interface response generated at the water table is found to be proportional to the jump in the electric current density, which in turn depends on the saturation contrast, poro-mechanical and electrical properties of the medium and on the amplitude of the solid displacement produced by the source. This result is in agreement with the one numerically obtained by the authors, which has been published in a recent work. We also predict the existence of an interface response located at the surface, and that the electric interface response is several orders of magnitude bigger than the electric coseismic field, whereas it is the opposite using compressional waves as shown by theoretical and experimental results. This fact should encourage the performance of field and laboratory tests to check the viability of SHTE seismoelectrics as a near surface prospecting/monitoring tool.

PREFACE: Functionalized Liquid Liquid Interfaces

NASA Astrophysics Data System (ADS)

Girault, Hubert; Kornyshev, Alexei A.; Monroe, Charles W.; Urbakh, Michael

2007-09-01

Most natural processes take place at interfaces. For this reason, surface science has been a focal point of modern research. At solid-liquid interfaces one can induce various species to adsorb or react, and thus may study interactions between the substrate and adsorbates, kinetic processes, optical properties, etc. Liquid-liquid interfaces, formed by immiscible liquids such as water and oil, have a number of distinctive features. Both sides of the interface are amenable to detailed physical and chemical analysis. By chemical or electrochemical means, metal or semiconductor nanoparticles can be formed or localised at the interface. Surfactants can be used to tailor surface properties, and also to place organic molecular or supermolecular constructions at the boundary between the liquids. Electric fields can be used to drive ions from one fluid to another, or even change the shape of the interface itself. In many cases, both liquids are optically transparent, making functionalized liquid-liquid interfaces promising for various optical applications based on the transmission or reflection of light. An advantage common to most of these systems is self-assembly; because a liquid-liquid interface is not mechanically constrained like a solid-liquid interface, it can easily access its most stable state, even after it has been driven far from equilibrium. This special issue focuses on four modes of liquid-liquid interfacial functionalization: the controlled adsorption of molecules or nanoparticles, the formation of adlayers or films, electrowetting, and ion transfer or interface-localized reactions. Interfacial adsorption can be driven electrically, chemically, or mechanically. The liquid-liquid interface can be used to study how anisotropic particles orient at a surface under the influence of a field, how surfactants interact with other adsorbates, and how nanoparticles aggregate; the transparency of the interface also makes the chirality of organic adsorbates amenable to optical study. Film formation goes a step beyond adsorption; some surfactants form monolayers or multilayers at the interface. A polymer microfilm or a polymer-particle matrix can be synthesized at the liquid-liquid boundary. Such films exhibit unique adsorption and ion-intercalation properties of their own. Electrowetting refers broadly to the phenomenon in which an applied voltage modulates the shape of a liquid-liquid interface, essentially by altering the surface tension. Electric fields can be used to induce droplets on solid substrates to change shape, or to affect the structure of liquid-liquid emulsions. Various chemical reactions can be performed at the liquid-liquid boundary. Liquid-liquid microelectrodes allow detailed study of ion-transfer kinetics at the interface. Photochemical processes can also be used to control the conformations of molecules adsorbed at the interface. But how much precise control do we actually have on the state of the interfacial region? Several contributions to this issue address a system which has been studied for decades in electrochemistry, but remains essentially unfamilar to physicists. This is the interface between two immiscible electrolytic solutions (ITIES), a progressing interdisciplinary field in which condensed-matter physics and physical chemistry meet molecular electrochemistry. Why is it so exciting? The reason is simple. The ITIES is chargeable: when positioned between two electrodes it can be polarized, and back- to-back electrical double layers form on both sides of the liquid-liquid interface. Importantly, the term immiscible refers not only to oil and water but also to the electrolytes. Inorganic electrolytes, such as alkali halides, tend to stay in water, whereas organic electrolytes, such as tetrabutylammonium tetraphenylborate, stay in oil. This behaviour arises because energies of the order of 0.2-0.3 eV are needed to drive ions across the interface. As long as these free energies of transfer are not exceeded by the external potential bias, the ITIES works as an 'electrode'; there is no traffic of ions across it. Thus the interface can sustain fields of the order of 106 V/cm, which are localized in a nanoscopic layer near the interface. This gives many new options for building various kinds of electrically tunable self assembled moloecular devices. Through the years, ITIES have been considered by electrochemists as a popular biomimetic model system, or for studies of interfacial reaction kinetics; ITIES were also used in industrial phase-transfer catalysis. Recently, this system has opened up new options for nano-scale engineering of functional assemblies (for dense information storage, efficient energy conversion, light-harvesting, and miniaturized sensors), which justifies its presentation in this issue.

Charge interaction between particle-laden fluid interfaces.

PubMed

Xu, Hui; Kirkwood, John; Lask, Mauricio; Fuller, Gerald

2010-03-02

Experiments are described where two oil/water interfaces laden with charged particles move at close proximity relative to one another. The particles on one of the interfaces were observed to be attracted toward the point of closest approach, forming a denser particle monolayer, while the particles on the opposite interface were repelled away from this point, forming a particle depletion zone. Such particle attraction/repulsion was observed even if one of the interfaces was free of particles. This phenomenon can be explained by the electrostatic interaction between the two interfaces, which causes surface charges (charged particles and ions) to redistribute in order to satisfy surface electric equipotential at each interface. In a forced particle oscillation experiment, we demonstrated the control of charged particle positions on the interface by manipulating charge interaction between interfaces.

The structural, electronic and optical properties of Au-ZnO interface structure from the first-principles calculation

NASA Astrophysics Data System (ADS)

Huo, Jin-Rong; Li, Lu; Cheng, Hai-Xia; Wang, Xiao-Xu; Zhang, Guo-Hua; Qian, Ping

2018-03-01

The interface structure, electronic and optical properties of Au-ZnO are studied using the first-principles calculation based on density functional theory (DFT). Given the interfacial distance, bonding configurations and terminated surface, we built the optimal interface structure and calculated the electronic and optical properties of the interface. The total density of states, partial electronic density of states, electric charge density and atomic populations (Mulliken) are also displayed. The results show that the electrons converge at O atoms at the interface, leading to a stronger binding of interfaces and thereby affecting the optical properties of interface structures. In addition, we present the binding energies of different interface structures. When the interface structure of Au-ZnO gets changed, furthermore, varying optical properties are exhibited.

Driving spin transition at interface: Role of adsorption configurations

NASA Astrophysics Data System (ADS)

Zhang, Yachao

2018-01-01

A clear insight into the electrical manipulation of molecular spins at interface is crucial to the design of molecule-based spintronic devices. Here we report on the electrically driven spin transition in manganocene physisorbed on a metallic surface in two different adsorption configurations predicted by ab initio techniques, including a Hubbard-U correction at the manganese site and accounting for the long-range van der Waals interactions. We show that the application of an electric field at the interface induces a high-spin to low-spin transition in the flat-lying manganocene, while it could hardly alter the high-spin ground state of the standing-up molecule. This phenomenon cannot be explained by either the molecule-metal charge transfer or the local electron correlation effects. We demonstrate a linear dependence of the intra-molecular spin-state splitting on the energy difference between crystal-field splitting and on-site Coulomb repulsion. After considering the molecule-surface binding energy shifts upon spin transition, we reproduce the obtained spin-state energetics. We find that the configuration-dependent responses of the spin-transition originate from the binding energy shifts instead of the variation of the local ligand field. Through these analyses, we obtain an intuitive understanding of the effects of molecule-surface contact on spin-crossover under electrical bias.

Fiber optic sensing subsystem for temperature monitoring in space in-flight applications

NASA Astrophysics Data System (ADS)

Abad, S.; Araujo, F.; Pinto, F.; González Torres, J.; Rodriguez, R.; Moreno, M. A.

2017-11-01

Fiber Optic Sensor (FOS) technology presents long recognized advantages which enable to mitigate deficient performance of conventional technology in hazard-environments common in spacecraft monitoring applications, such as: multiplexing capability, immunity to EMI/RFI, remote monitoring, small size and weight, electrical insulation, intrinsically safe operation, high sensibility and long term reliability. A key advantage is also the potential reduction of Assembly Integration and Testing (AIT) time achieved by the multiplexing capability and associated reduced harness. In the frame of the ESA's ARTES5.2 and FLPP-Phase 3 programs, Airbus DS-Crisa and FiberSensing are developing a Fiber Bragg Grating (FBG) - based temperature monitoring system for application in space telecommunication platforms and launchers. The development encompasses both the interrogation unit and the FBG temperature sensors and associated fiber harness. In parallel Airbus DS - Crisa is developing a modular RTU (RTU2015) to provide maximum flexibility and mission-customization capability for RTUs maintaining the ESA's standards at I/O interface level [1]. In this context, the FBG interrogation unit is designed as a module to be compatible, in both physical dimensions and electrical interfaces aspects, with the Electrical Internal Interface Bus of the RTU2015, thus providing the capability for a hybrid electrical and optical monitoring system.

Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jaouad, A.; Aimez, V.; Aktik, Ç.; Bellatreche, K.; Souifi, A.

2004-05-01

Metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators. The electrical properties of the fabricated MIS capacitors were analyzed using high-frequency capacitance-voltage and conductance-voltage measurements. The high concentration of hydrogen present during low-frequency plasma deposition of silicon nitride enhances the passivation of GaAs surface, leading to the unpinning of the Fermi level and to a good modulation of the surface potential by gate voltage. The electrical properties of the insulator-semiconductor interface are improved after annealing at 450 °C for 60 s, as a significant reduction of the interface fixed charges and of the interface states density is put into evidence. The minimum interface states density was found to be about 3×1011 cm-2 eV-1, as estimated by the Terman method. .

Optical switch based on the electrically controlled liquid crystal interface.

PubMed

Komar, Andrei A; Tolstik, Alexei L; Melnikova, Elena A; Muravsky, Alexander A

2015-06-01

The peculiarities of the linearly polarized light beam reflection at the interface within the bulk of a nematic liquid crystal (NLC) cell with different orientations of the director are analyzed. Two methods to create the interface are considered. Combination of the planar and homeotropic orientations of the NLC director is realized by means of a spatially structured electrode under the applied voltage. In-plane patterned azimuthal alignment of the NLC director is created by the patterned rubbing alignment technique. All possible orthogonal orientations of the LC director are considered; the configurations for realization of total internal reflection are determined. The revealed relationship between the propagation of optical beams in a liquid crystal material and polarization of laser radiation has enabled realization of the spatial separation for the orthogonally polarized light beams at the interface between two regions of NLC with different director orientations (domains). Owing to variations in the applied voltage and, hence, in the refractive index gradient, the light beam propagation directions may be controlled electrically.

Understanding the adhesion and optical properties of eutectic metal alloys for solution-processed electronics

NASA Astrophysics Data System (ADS)

Kumar, Prashant; Aggarwal, Shantanu; Narayana, Chandrabhas; Narayan, K. S.

2018-02-01

The role of indium in controlling the adhesion and the optical properties of fusible, low- melting alloys is highlighted in this work. The optical activity of indium-alloy/polymer interface is probed using surface-enhanced Raman spectroscopy, which shows a large increase in polymer Raman modes intensity. Signatures of plasmon and chemically enhanced Raman are visible for more than one polymer. Improvement in adhesion is also reflected in their ability to coat conformally onto the polymer surface resulting in a suitable interface for electrical transport. The electrical characteristics of alloy electrodes, which are printed in ambient conditions, are superior when compared to the thermally evaporated aluminum cathodes. Raman and responsivity measurements indicate that indium (In) forms metal/organic hybrid charge-transfer states at the alloy/polymer interface and assumes a decisive role in controlling the mechanical, optical, and electrical properties of these electrodes. Our studies suggest that the indium present in small quantities (˜5 wt. %) can significantly improve the overall performance of the low-temperature printable eutectic alloy electrodes.

Programmable Hydrogel Ionic Circuits for Biologically Matched Electronic Interfaces.

PubMed

Zhao, Siwei; Tseng, Peter; Grasman, Jonathan; Wang, Yu; Li, Wenyi; Napier, Bradley; Yavuz, Burcin; Chen, Ying; Howell, Laurel; Rincon, Javier; Omenetto, Fiorenzo G; Kaplan, David L

2018-06-01

The increased need for wearable and implantable medical devices has driven the demand for electronics that interface with living systems. Current bioelectronic systems have not fully resolved mismatches between engineered circuits and biological systems, including the resulting pain and damage to biological tissues. Here, salt/poly(ethylene glycol) (PEG) aqueous two-phase systems are utilized to generate programmable hydrogel ionic circuits. High-conductivity salt-solution patterns are stably encapsulated within PEG hydrogel matrices using salt/PEG phase separation, which route ionic current with high resolution and enable localized delivery of electrical stimulation. This strategy allows designer electronics that match biological systems, including transparency, stretchability, complete aqueous-based connective interface, distribution of ionic electrical signals between engineered and biological systems, and avoidance of tissue damage from electrical stimulation. The potential of such systems is demonstrated by generating light-emitting diode (LED)-based displays, skin-mounted electronics, and stimulators that deliver localized current to in vitro neuron cultures and muscles in vivo with reduced adverse effects. Such electronic platforms may form the basis of future biointegrated electronic systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Planar Diamond-Based Multiarrays to Monitor Neurotransmitter Release and Action Potential Firing: New Perspectives in Cellular Neuroscience.

PubMed

Carabelli, Valentina; Marcantoni, Andrea; Picollo, Federico; Battiato, Alfio; Bernardi, Ettore; Pasquarelli, Alberto; Olivero, Paolo; Carbone, Emilio

2017-02-15

High biocompatibility, outstanding electrochemical responsiveness, inertness, and transparency make diamond-based multiarrays (DBMs) first-rate biosensors for in vitro detection of electrochemical and electrical signals from excitable cells together, with potential for in vivo applications as neural interfaces and prostheses. Here, we will review the electrochemical and physical properties of various DBMs and how these devices have been employed for recording released neurotransmitter molecules and all-or-none action potentials from living cells. Specifically, we will overview how DBMs can resolve localized exocytotic events from subcellular compartments using high-density microelectrode arrays (MEAs), or monitoring oxidizable neurotransmitter release from populations of cells in culture and tissue slices using low-density MEAs. Interfacing DBMs with excitable cells is currently leading to the promising opportunity of recording electrical signals as well as creating neuronal interfaces through the same device. Given the recent increasingly growing development of newly available DBMs of various geometries to monitor electrical activity and neurotransmitter release in a variety of excitable and neuronal tissues, the discussion will be limited to planar DBMs.

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

NASA Astrophysics Data System (ADS)

Hsu, Sheng-Chia; Li, Yiming

2014-11-01

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state ( D it). The variability of the off-state current ( I off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D it varying from 5 × 1012 to 5 × 1013 eV-1 cm-2 owing to significant threshold voltage ( V th) fluctuation. The results of this study indicate that if the level of D it is lower than 1 × 1012 eV-1 cm-2, the normalized variability of the on-state current, I off, V th, DIBL, and subthreshold swing is within 5%.

Effects of brain-computer interface-based functional electrical stimulation on brain activation in stroke patients: a pilot randomized controlled trial.

PubMed

Chung, EunJung; Kim, Jung-Hee; Park, Dae-Sung; Lee, Byoung-Hee

2015-03-01

[Purpose] This study sought to determine the effects of brain-computer interface-based functional electrical stimulation (BCI-FES) on brain activation in patients with stroke. [Subjects] The subjects were randomized to in a BCI-FES group (n=5) and a functional electrical stimulation (FES) group (n=5). [Methods] Patients in the BCI-FES group received ankle dorsiflexion training with FES for 30 minutes per day, 5 times under the brain-computer interface-based program. The FES group received ankle dorsiflexion training with FES for the same amount of time. [Results] The BCI-FES group demonstrated significant differences in the frontopolar regions 1 and 2 attention indexes, and frontopolar 1 activation index. The FES group demonstrated no significant differences. There were significant differences in the frontopolar 1 region activation index between the two groups after the interventions. [Conclusion] The results of this study suggest that BCI-FES training may be more effective in stimulating brain activation than only FES training in patients recovering from stroke.

Electrical Currents and Adhesion of Edge-Delete Regions of EVA-to-Glass Module Packaging: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, T. J.; Jorgensen, G. J.

2001-10-01

Presented at the 2001 NCPV Program Review Meeting: Electrical conductivity pathways from the grounded frame to the cell area in a PV module are reviewed here. Electrical conductivity pathways from the grounded frame to the cell area in a PV module are reviewed here. Measurements are made on 4 inch x 8 inch soda lime (SL) glass substrates with contact patterns defined using 3-mil and 10-mil diameter bead-blast removal of the SnO{sub 2} coating to study the dominant path, which is the EVA/glass interface. The remaining SnO{sub 2} contact strips are separated by what would simulate the module edge deletemore » regions. EVA encapsulated bead-blast surface resistances are 8 x 10{sup 15} ohm/sq compared to 8 x 10{sup 12} ohm/sq for native SL glass surfaces. Adhesion strengths to bead-blast surfaces are 25 to 30 lbs/in. Stress test results on these interfaces after removal from damp heat suggest corrosion of the glass at the glass-EVA interface.« less

Invasive Intraneural Interfaces: Foreign Body Reaction Issues

PubMed Central

Lotti, Fiorenza; Ranieri, Federico; Vadalà, Gianluca; Zollo, Loredana; Di Pino, Giovanni

2017-01-01

Intraneural interfaces are stimulation/registration devices designed to couple the peripheral nervous system (PNS) with the environment. Over the last years, their use has increased in a wide range of applications, such as the control of a new generation of neural-interfaced prostheses. At present, the success of this technology is limited by an electrical impedance increase, due to an inflammatory response called foreign body reaction (FBR), which leads to the formation of a fibrotic tissue around the interface, eventually causing an inefficient transduction of the electrical signal. Based on recent developments in biomaterials and inflammatory/fibrotic pathologies, we explore and select the biological solutions that might be adopted in the neural interfaces FBR context: modifications of the interface surface, such as organic and synthetic coatings; the use of specific drugs or molecular biology tools to target the microenvironment around the interface; the development of bio-engineered-scaffold to reduce immune response and promote interface-tissue integration. By linking what we believe are the major crucial steps of the FBR process with related solutions, we point out the main issues that future research has to focus on: biocompatibility without losing signal conduction properties, good reproducible in vitro/in vivo models, drugs exhaustion and undesired side effects. The underlined pros and cons of proposed solutions show clearly the importance of a better understanding of all the molecular and cellular pathways involved and the need of a multi-target action based on a bio-engineered combination approach. PMID:28932181

A brain-spine interface alleviating gait deficits after spinal cord injury in primates.

PubMed

Capogrosso, Marco; Milekovic, Tomislav; Borton, David; Wagner, Fabien; Moraud, Eduardo Martin; Mignardot, Jean-Baptiste; Buse, Nicolas; Gandar, Jerome; Barraud, Quentin; Xing, David; Rey, Elodie; Duis, Simone; Jianzhong, Yang; Ko, Wai Kin D; Li, Qin; Detemple, Peter; Denison, Tim; Micera, Silvestro; Bezard, Erwan; Bloch, Jocelyne; Courtine, Grégoire

2016-11-10

Spinal cord injury disrupts the communication between the brain and the spinal circuits that orchestrate movement. To bypass the lesion, brain-computer interfaces have directly linked cortical activity to electrical stimulation of muscles, and have thus restored grasping abilities after hand paralysis. Theoretically, this strategy could also restore control over leg muscle activity for walking. However, replicating the complex sequence of individual muscle activation patterns underlying natural and adaptive locomotor movements poses formidable conceptual and technological challenges. Recently, it was shown in rats that epidural electrical stimulation of the lumbar spinal cord can reproduce the natural activation of synergistic muscle groups producing locomotion. Here we interface leg motor cortex activity with epidural electrical stimulation protocols to establish a brain-spine interface that alleviated gait deficits after a spinal cord injury in non-human primates. Rhesus monkeys (Macaca mulatta) were implanted with an intracortical microelectrode array in the leg area of the motor cortex and with a spinal cord stimulation system composed of a spatially selective epidural implant and a pulse generator with real-time triggering capabilities. We designed and implemented wireless control systems that linked online neural decoding of extension and flexion motor states with stimulation protocols promoting these movements. These systems allowed the monkeys to behave freely without any restrictions or constraining tethered electronics. After validation of the brain-spine interface in intact (uninjured) monkeys, we performed a unilateral corticospinal tract lesion at the thoracic level. As early as six days post-injury and without prior training of the monkeys, the brain-spine interface restored weight-bearing locomotion of the paralysed leg on a treadmill and overground. The implantable components integrated in the brain-spine interface have all been approved for investigational applications in similar human research, suggesting a practical translational pathway for proof-of-concept studies in people with spinal cord injury.

A Brain–Spinal Interface Alleviating Gait Deficits after Spinal Cord Injury in Primates

PubMed Central

Capogrosso, Marco; Milekovic, Tomislav; Borton, David; Wagner, Fabien; Moraud, Eduardo Martin; Mignardot, Jean-Baptiste; Buse, Nicolas; Gandar, Jerome; Barraud, Quentin; Xing, David; Rey, Elodie; Duis, Simone; Jianzhong, Yang; Ko, Wai Kin D.; Li, Qin; Detemple, Peter; Denison, Tim; Micera, Silvestro; Bezard, Erwan; Bloch, Jocelyne; Courtine, Grégoire

2016-01-01

Spinal cord injury disrupts the communication between the brain and the spinal circuits that orchestrate movement. To bypass the lesion, brain–computer interfaces1–3 have directly linked cortical activity to electrical stimulation of muscles, which have restored grasping abilities after hand paralysis1,4. Theoretically, this strategy could also restore control over leg muscle activity for walking5. However, replicating the complex sequence of individual muscle activation patterns underlying natural and adaptive locomotor movements poses formidable conceptual and technological challenges6,7. Recently, we showed in rats that epidural electrical stimulation of the lumbar spinal cord can reproduce the natural activation of synergistic muscle groups producing locomotion8–10. Here, we interfaced leg motor cortex activity with epidural electrical stimulation protocols to establish a brain–spinal interface that alleviated gait deficits after a spinal cord injury in nonhuman primates. Rhesus monkeys were implanted with an intracortical microelectrode array into the leg area of motor cortex; and a spinal cord stimulation system composed of a spatially selective epidural implant and a pulse generator with real-time triggering capabilities. We designed and implemented wireless control systems that linked online neural decoding of extension and flexion motor states with stimulation protocols promoting these movements. These systems allowed the monkeys to behave freely without any restrictions or constraining tethered electronics. After validation of the brain–spinal interface in intact monkeys, we performed a unilateral corticospinal tract lesion at the thoracic level. As early as six days post-injury and without prior training of the monkeys, the brain–spinal interface restored weight-bearing locomotion of the paralyzed leg on a treadmill and overground. The implantable components integrated in the brain–spinal interface have all been approved for investigational applications in similar human research, suggesting a practical translational pathway for proof-of-concept studies in people with spinal cord injury. PMID:27830790

Optofluidic lens with tunable focal length and asphericity

PubMed Central

Mishra, Kartikeya; Murade, Chandrashekhar; Carreel, Bruno; Roghair, Ivo; Oh, Jung Min; Manukyan, Gor; van den Ende, Dirk; Mugele, Frieder

2014-01-01

Adaptive micro-lenses enable the design of very compact optical systems with tunable imaging properties. Conventional adaptive micro-lenses suffer from substantial spherical aberration that compromises the optical performance of the system. Here, we introduce a novel concept of liquid micro-lenses with superior imaging performance that allows for simultaneous and independent tuning of both focal length and asphericity. This is achieved by varying both hydrostatic pressures and electric fields to control the shape of the refracting interface between an electrically conductive lens fluid and a non-conductive ambient fluid. Continuous variation from spherical interfaces at zero electric field to hyperbolic ones with variable ellipticity for finite fields gives access to lenses with positive, zero, and negative spherical aberration (while the focal length can be tuned via the hydrostatic pressure). PMID:25224851

Spin accumulation in permalloy-ZnO heterostructures from both electrical injection and spin pumping

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Yumeng; Wang, Ying; Luo, Ziyan; Xie, Hang; Wu, Yihong

2017-11-01

We report the results of room temperature spin injection and detection studies in ZnO using both electrical injection and spin pumping. At ferromagnetic resonance, an interfacial voltage with a constant polarity upon magnetization reversal is observed in permalloy-ZnO heterostructures, which is attributed to spin accumulation after ruling out other origins. Simultaneous electrical injection during spin pumping is achieved in samples with large interface resistance or insertion of a thin MgO layer at the interface of permalloy and ZnO. From the pumping frequency dependence of detected voltage, a spin lifetime of 32 ps is extracted for ZnO at room temperature, despite the fact that there was no Hanle effect observed in the same device using the conventional three-terminal DC measurement.

Active alignment/contact verification system

DOEpatents

Greenbaum, William M.

2000-01-01

A system involving an active (i.e. electrical) technique for the verification of: 1) close tolerance mechanical alignment between two component, and 2) electrical contact between mating through an elastomeric interface. For example, the two components may be an alumina carrier and a printed circuit board, two mating parts that are extremely small, high density parts and require alignment within a fraction of a mil, as well as a specified interface point of engagement between the parts. The system comprises pairs of conductive structures defined in the surfaces layers of the alumina carrier and the printed circuit board, for example. The first pair of conductive structures relate to item (1) above and permit alignment verification between mating parts. The second pair of conductive structures relate to item (2) above and permit verification of electrical contact between mating parts.

Space shuttle/food system study

NASA Technical Reports Server (NTRS)

1974-01-01

This document establishes the Functional, physical and performance interface requirements are studied between the space shuttle orbiter and the galley water system, the orbiter and the galley electrical system, and the orbiter and the galley structural system. Control of the configuration and design of the applicable interfacing items is intended to maintain compatibility between co-functioning and physically mating items and to assure those performance criteria that are dependent upon the interfacing items.

Design study of RL10 derivatives. Volume 3, part 1: Preliminary interface control document. [development of baseline engines for space tug vehicles

NASA Technical Reports Server (NTRS)

Adams, A.

1973-01-01

The Interface Control Document contains engine information necessary for installation of the baseline RL10 Derivative engines in the Space Tug vehicle. The ICD presents a description of the baseline engines and their operating characteristics, mass and load characteristics, and environmental criteria. The document defines the engine/vehicle mechanical, electrical, fluid and pneumatic interface requirements.

Hetero-Interfaces For Extreme Electronic Environments

DTIC Science & Technology

2014-07-23

summary of such new hypothesis and supporting or conflicting results we have observed in the path to understand the electrical behavior of such oxide ...interface Ti4+ becomes Ti3.5+. Unlike semiconductors, at the oxide interface there can be multiple quantum wells; sub-bands of Ti 3d orbitals exist... oxidizing conditions, the conductivity decreases tremendously as also shown in our results (Figure 2); an unexpected result if the electronic

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R. R.; Khare, Neeraj

2018-04-01

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi2Te3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi2Te3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi2Te3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

NASA Astrophysics Data System (ADS)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Spontaneous emission of Bloch oscillation radiation under the competing influences of microcavity enhancement and inhomogeneous interface degradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sokolov, V. N.; Iafrate, G. J.

2014-02-07

A theory for the spontaneous emission (SE) of terahertz radiation for a Bloch electron traversing a single energy miniband of a superlattice (SL) in a cavity, while undergoing elastic scattering is presented. The Bloch electron is accelerated under the influence of a superimposed external constant electric field and an internal inhomogeneous electric field, while radiating into a microcavity. The analysis of the SE accounts for both the spectral structure of nonharmonic miniband components and the Bloch oscillation degradation effects arising from elastic scattering due to SL interface roughness. The interface roughness effects are decomposed into contributions arising from independent planarmore » and cross-correlated neighboring planar interfaces; parametric numerical estimates show that the cross-correlated contribution to the SE relaxation rate is relatively small, representing less than roughly 10% of the total relaxation rate. It is shown that the degradation effects from SL interface roughness can be more than compensated for by the enhancements derived from microcavity-based tuning of the emission frequency to the cavity density of states peak. The theoretical approach developed herein has general applicability beyond its use for elastic scattering due to interface roughness. As well, the results obtained in this analysis can be useful in the development of SL-based Bloch-oscillator terahertz devices.« less

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics.

PubMed

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R R; Khare, Neeraj

2018-04-03

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi 2 Te 3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi 2 Te 3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi 2 Te 3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Feasibility of Interfacing a Microcomputer with a Multichannel Analyzer to Perform Gamma Ray Spectroscopy.

DTIC Science & Technology

1981-03-01

David Hardin. Many members and students of the Electrical Engineering department helped as I was assembling and testing hardware, but I wish to...in a detector and produce electrical pulses with amplitude proportional to the energy of the gamma ray absorbed. The electrical pulses are amplified...accomplished : t ges. First, the electrical outputs available Cron the 6 multichannel analyzer were determined. Then, a microcomputer was selected from those

Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects

NASA Astrophysics Data System (ADS)

Averbuch, Amir; Israeli, Moshe; Nathan, Menachem; Ravve, Igor

2003-07-01

Irregularities such as voids and cracks often occur in bamboo-type metal lines of microelectronic interconnects. They increase the resistance of the circuits, and may even lead to a fatal failure. In this work, we analyze numerically the electromigration of an unpassivated bamboo-type line with pre-existing irregularities in its top surface (also called a grain-void interface). The bamboo line is subjected to surface diffusion forces and external electric fields. Under these forces, initial defects may either heal or become worse. The grain-void interface is considered to be one-dimensional, and the physical formulation of an electromigration and diffusion model results in two coupled, fourth order, one-dimensional time-dependent PDEs, with the boundary conditions imposed at the electrode points and at the triple point, which belongs to two neighboring grains and the void. These equations are discretized by finite differences on a regular grid in space, and by a Runge-Kutta integration scheme in time, and solved simultaneously with a static Laplace equation describing the voltage distribution throughout each grain, when the substrate conductivity is neglected. Since the voltage distribution is required only along an interface line, the two-dimensional discretization of the grain interior is not needed, and the static problem is solved by the boundary element method at each time step. The motion of the interface line is studied for different ratios between diffusion and electric field forces, and for different initial configurations of the grain-void interface. We study plain and tilted contour lines, considering positive and negative tilts with respect to the external electric field, a stepped contour with field lines entering or exiting the 'step', and a number of modifications of the classical Mullins problem of thermal grooving. We also consider a two-grain Mullins problem with a normal and tilted boundary between the grains, examining positive and negative tilts.

Electric Field Induced Interfacial Instabilities

NASA Technical Reports Server (NTRS)

Kusner, Robert E.; Min, Kyung Yang; Wu, Xiao-lun; Onuki, Akira

1999-01-01

The study of the interface in a charge-free, critical and near-critical binary fluid in the presence of an externally applied electric field is presented. At sufficiently large fields, the interface between the two phases of the binary fluid should become unstable and exhibit an undulation with a predefined wavelength on the order of the capillary length. As the critical point is approached, this wavelength is reduced, potentially approaching length-scales such as the correlation length or critical nucleation radius. At this point the critical properties of the system may be affected. In this paper, the flat interface of a marginally polar binary fluid mixture is stressed by a perpendicular alternating electric field and the resulting instability is characterized by the critical electric field E(sub c) and the pattern observed. The character of the surface dynamics at the onset of instability is found to be strongly dependent on the frequency f of the field applied. The plot of E(sub c) vs. f for a fixed temperature shows a sigmoidal shape, whose low and high frequency limits are well described by a power-law relationship, E(sub c) = epsilon(exp zeta) with zeta = 0.35 and zeta = 0.08, respectively. The low-limit exponent compares well with the value zeta = 4 for a system of conducting and non-conducting fluids. On the other hand, the high-limit exponent coincides with what was first predicted by Onuki. The instability manifests itself as the conducting phase penetrates the non-conducting phase. As the frequency increases, the shape of the pattern changes from an array of bifurcating strings to an array of column-like (or rod-like) protrusions, each of which spans the space between the plane interface and one of the electrodes. For an extremely high frequency, the disturbance quickly grows into a parabolic cone pointing toward the upper plate. As a result, the interface itself changes its shape from that of a plane to that of a high sloping pyramid.

Summary of Research 1998, Department of Electrical and Computer Engineering.

DTIC Science & Technology

1999-08-01

Channel Interference," Master’s Thesis, Naval Postgraduate School, December 1998. Erdogan , V, "Time Domain Simulation of MPSK Communications System...1998, several new user interface screens have been designed. Software for reading data from analog tape has been completed and interfaced to the

78 FR 34370 - Revisions to Electric Quarterly Report Filing Process; Notice of Availability of Video Showing...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-06-07

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. RM12-3-000] Revisions to Electric Quarterly Report Filing Process; Notice of Availability of Video Showing How To File Electric Quarterly Reports Using the Web Interface Take notice that the Federal Energy Regulatory Commission (Commission) is making available on its Web site ...

Variable Temperature Scanning Tunneling Microscopy

DTIC Science & Technology

1991-07-01

Tomazin, both Electrical Engineering. Build a digital integrator for the STM feedback loop: Kyle Drewry, Electrical Engineering. Write an AutoLisp ...program to automate the AutoCad design of UHV-STM chambers: Alfred Pierce (minority), Mechanical Engineering. Design a 32-bit interface board for the EISA

The balance of electric field and interfacial catalysis in promoting water dissociation in bipolar membranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Zhifei; Zhu, Liang; Li, Yuguang C.

Bipolar membranes maintain a steady pH in electrolytic cells through water autodissociation at the interface between their cation- and anion-exchange layers. We analyze the balance of electric field and catalysis in accelerating this reaction.

The balance of electric field and interfacial catalysis in promoting water dissociation in bipolar membranes

DOE PAGES

Yan, Zhifei; Zhu, Liang; Li, Yuguang C.; ...

2018-01-01

Bipolar membranes maintain a steady pH in electrolytic cells through water autodissociation at the interface between their cation- and anion-exchange layers. We analyze the balance of electric field and catalysis in accelerating this reaction.

Electric field modulation of Schottky barrier height in graphene/MoSe{sub 2} van der Waals heterointerface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sata, Yohta; Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp, E-mail: tmachida@iis.u-tokyo.ac.jp; Morikawa, Sei

2015-07-13

We demonstrate a vertical field-effect transistor based on a graphene/MoSe{sub 2} van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe{sub 2} exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe{sub 2} vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10{sup 5}. These results point to the potential high performance ofmore » the graphene/MoSe{sub 2} vdW heterostructure for electronics applications.« less

Influence of thermodynamic mechanism of inter- facial adsorption on purifying air-conditioning engineering under intensification of electric field

NASA Astrophysics Data System (ADS)

Chen, Yun-Yu

2016-12-01

As a kind of mass transfer process as well as the basis of separating and purifying mixtures, interfacial adsorption has been widely applied to fields like chemical industry, medical industry and purification engineering in recent years. Influencing factors of interfacial adsorption, in addition to the traditional temperature, intensity of pressure, amount of substance and concentration, also include external fields, such as magnetic field, electric field and electromagnetic field, etc. Starting from the point of thermodynamics and taking the Gibbs adsorption as the model, the combination of energy axiom and the first law of thermodynamics was applied to boundary phase, and thus the theoretical expression for the volume of interface absorption under electric field as well as the mathematical relationship between surface tension and electric field intensity was obtained. In addition, according to the obtained theoretical expression, the volume of interface absorption of ethanol solution under different electric field intensities and concentrations was calculated. Moreover, the mechanism of interfacial adsorption was described from the perspective of thermodynamics and the influence of electric field on interfacial adsorption was explained reasonably, aiming to further discuss the influence of thermodynamic mechanism of interfacial adsorption on purifying air-conditioning engineering under intensification of electric field.

Numerical investigation into blood clotting at the bone-dental implant interface in the presence of an electrical stimulus.

PubMed

Vanegas-Acosta, J C; Garzón-Alvarado, D A; Lancellotti, V

2013-12-01

The insertion of a dental implant activates a sequence of wound healing events ending with bone formation and implant osseointegration. This sequence starts with the blood coagulation process and the formation of a fibrin network that detains spilt blood. Fibrin formation can be simplified as the kinetic reaction between thrombin and fibrinogen preceding the conversion of fibrinogen into fibrin. Based on experimental observations of the electrical properties of these molecules, we present a hypothesis for the mechanism of a static electrical stimulus in controlling the formation of the blood clot. Specifically, the electrical stimulus increases the fibrin network formation in such a way that a preferential region of higher fibrin density is obtained. This hypothesis is validated by means of a numerical model for the blood clot formation at the bone-dental implant interface. Numerical results compare favorably to experimental observations for blood clotting with and without the static electrical stimulus. It is concluded that the density of the fibrin network depends on the strength of the static electrical stimulus, and that the blood clot formation has a preferential direction of formation in the presence of the electrical signal. © 2013 Published by Elsevier Ltd. All rights reserved.

Eddy current sensor concepts for the Bridgman growth of semiconductors

NASA Astrophysics Data System (ADS)

Dharmasena, Kumar P.; Wadley, Haydn N. G.

1997-03-01

Electromagnetic finite element methods have been used to identify eddy current sensor designs for monitoring CdTe vertical Bridgman crystal growth. A model system consisting of pairs of silicon cylinders with electrical conductivities similar to those of solid and liquid CdTe has been used to evaluate the multifrequency response of several sensors designed for locating and characterizing the curvature of liquid-solid interfaces during vertical Bridgman growth. At intermediate frequencies (100-800 kHz), the sensor's imaginary impedance monotonically increases as interfacial curvature changes from concave to convex or the interface location moves upwards through the sensor. The experimental data are in excellent agreement with theoretical predictions. At higher test frequencies (˜ 5 MHz), the test circuit's parasitics contribute to the sensor's response. Even so, the predicted trends with interface location/curvature were found to be still preserved, and the experiments confirm that the sensor's high frequency response depends more on interface location and has only a small sensitivity to curvature. Multifrequency data obtained from these types of sensors have the potential to separately discriminate the location and the shape of liquid-solid interfaces during the vertical Bridgman growth of CdTe and other semiconductor materials of higher electrical conductivity.

A Human-machine-interface Integrating Low-cost Sensors with a Neuromuscular Electrical Stimulation System for Post-stroke Balance Rehabilitation.

PubMed

Kumar, Deepesh; Das, Abhijit; Lahiri, Uttama; Dutta, Anirban

2016-04-12

A stroke is caused when an artery carrying blood from heart to an area in the brain bursts or a clot obstructs the blood flow to brain thereby preventing delivery of oxygen and nutrients. About half of the stroke survivors are left with some degree of disability. Innovative methodologies for restorative neurorehabilitation are urgently required to reduce long-term disability. The ability of the nervous system to reorganize its structure, function and connections as a response to intrinsic or extrinsic stimuli is called neuroplasticity. Neuroplasticity is involved in post-stroke functional disturbances, but also in rehabilitation. Beneficial neuroplastic changes may be facilitated with non-invasive electrotherapy, such as neuromuscular electrical stimulation (NMES) and sensory electrical stimulation (SES). NMES involves coordinated electrical stimulation of motor nerves and muscles to activate them with continuous short pulses of electrical current while SES involves stimulation of sensory nerves with electrical current resulting in sensations that vary from barely perceivable to highly unpleasant. Here, active cortical participation in rehabilitation procedures may be facilitated by driving the non-invasive electrotherapy with biosignals (electromyogram (EMG), electroencephalogram (EEG), electrooculogram (EOG)) that represent simultaneous active perception and volitional effort. To achieve this in a resource-poor setting, e.g., in low- and middle-income countries, we present a low-cost human-machine-interface (HMI) by leveraging recent advances in off-the-shelf video game sensor technology. In this paper, we discuss the open-source software interface that integrates low-cost off-the-shelf sensors for visual-auditory biofeedback with non-invasive electrotherapy to assist postural control during balance rehabilitation. We demonstrate the proof-of-concept on healthy volunteers.

A Human-machine-interface Integrating Low-cost Sensors with a Neuromuscular Electrical Stimulation System for Post-stroke Balance Rehabilitation

PubMed Central

Kumar, Deepesh; Das, Abhijit; Lahiri, Uttama; Dutta, Anirban

2016-01-01

A stroke is caused when an artery carrying blood from heart to an area in the brain bursts or a clot obstructs the blood flow to brain thereby preventing delivery of oxygen and nutrients. About half of the stroke survivors are left with some degree of disability. Innovative methodologies for restorative neurorehabilitation are urgently required to reduce long-term disability. The ability of the nervous system to reorganize its structure, function and connections as a response to intrinsic or extrinsic stimuli is called neuroplasticity. Neuroplasticity is involved in post-stroke functional disturbances, but also in rehabilitation. Beneficial neuroplastic changes may be facilitated with non-invasive electrotherapy, such as neuromuscular electrical stimulation (NMES) and sensory electrical stimulation (SES). NMES involves coordinated electrical stimulation of motor nerves and muscles to activate them with continuous short pulses of electrical current while SES involves stimulation of sensory nerves with electrical current resulting in sensations that vary from barely perceivable to highly unpleasant. Here, active cortical participation in rehabilitation procedures may be facilitated by driving the non-invasive electrotherapy with biosignals (electromyogram (EMG), electroencephalogram (EEG), electrooculogram (EOG)) that represent simultaneous active perception and volitional effort. To achieve this in a resource-poor setting, e.g., in low- and middle-income countries, we present a low-cost human-machine-interface (HMI) by leveraging recent advances in off-the-shelf video game sensor technology. In this paper, we discuss the open-source software interface that integrates low-cost off-the-shelf sensors for visual-auditory biofeedback with non-invasive electrotherapy to assist postural control during balance rehabilitation. We demonstrate the proof-of-concept on healthy volunteers. PMID:27166666

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

George, B. M.; Behrends, J.; Schnegg, A.; Schulze, T. F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W. G.; Gerstmann, U.

2013-03-01

Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.

Ballistic-Electron-Emission Microscope

NASA Technical Reports Server (NTRS)

Kaiser, William J.; Bell, L. Douglas

1990-01-01

Ballistic-electron-emission microscope (BEEM) employs scanning tunneling-microscopy (STM) methods for nondestructive, direct electrical investigation of buried interfaces, such as interface between semiconductor and thin metal film. In BEEM, there are at least three electrodes: emitting tip, biasing electrode, and collecting electrode, receiving current crossing interface under investigation. Signal-processing device amplifies electrode signals and converts them into form usable by computer. Produces spatial images of surface by scanning tip; in addition, provides high-resolution images of buried interface under investigation. Spectroscopic information extracted by measuring collecting-electrode current as function of one of interelectrode voltages.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Microgravity

NASA Image and Video Library

2004-04-15

The M512 Materials Processing Facility (MPF) with the M518 Multipurpose Electric Facility (MEF) tested and demonstrated a facility approach for materials process experimentation in space. It also provided a basic apparatus and a common interface for a group of metallic and nonmetallic materials experiments. The MPF consisted of a vacuum work chamber and associated mechanical and electrical controls. The M518 Multipurpose Electric Furnace (MEF) was an electric furnace system in which solidification, crystal growth, and other experiments involving phase changes were performed.

Atmosphere, Magnetosphere and Plasmas in Space (AMPS). Spacelab payload definition study. Volume 3, book 2: AMPS equipment to Spacelab ICD

NASA Technical Reports Server (NTRS)

1976-01-01

The interfaces between AMPS Payload No.(TBD) and Spacelab are described. The interfaces specified cover the AMPS physical, electrical, and thermal interfaces that are established to prescribe the standard Spacelab configuration required to perform the mission. If the configuration definition changes due to change of Spacelab equipment model, or serial numbers, then reidentification of the Labcraft payload may be required.

Interface Characteristics and the Mechanical Properties of Metal Matrix Composites.

DTIC Science & Technology

1987-09-28

of Composites ’" 18 Appendix B Interfaces in Aluminum Metal Matrix Composites g 28 Appendix C Interface Failure in Planar Aluminum-Graphite Composites...Appendix G Residual Stresses in Composite Materials: An Overview of Measurements Used 92 Appendix H Raman Microprobe Measurements of Residual Stresses at...In addition .. to this direct electrostatic attraction, the space charge establishes an electric field of 2 S.. % ° °° % " ° " g

Sheathless interface for coupling capillary electrophoresis with mass spectrometry

DOEpatents

Wang, Chenchen; Tang, Keqi; Smith, Richard D.

2014-06-17

A sheathless interface for coupling capillary electrophoresis (CE) with mass spectrometry is disclosed. The sheathless interface includes a separation capillary for performing CE separation and an emitter capillary for electrospray ionization. A portion of the emitter capillary is porous or, alternatively, is coated to form an electrically conductive surface. A section of the emitter capillary is disposed within the separation capillary, forming a joint. A metal tube, containing a conductive liquid, encloses the joint.

Service equipment for use in hostile environments

NASA Technical Reports Server (NTRS)

Dolce, James L. (Inventor); Gordon, Andrew L. (Inventor)

1994-01-01

Service equipment for use in hostile environments includes a detachable service unit secured to a stationary service unit. The detachable service unit includes a housing with an exterior plate, a power control interface for connection to an exterior power source, locating pins located in said exterior plate, an electrical connector in the exterior plate electrically coupled to said power control interface, and a pair of clamping receptacles formed in the exterior plate and located on adjacent opposite edges of the exterior plate. The stationary unit includes an electrical connector for connection to the electrical connector of the detachable service unit, a clamping apparatus for clamping and unclamping the detachable service unit from the stationary unit, a base clamp assembly for mounting the clamping apparatus onto the stationary unit, and locating pin holes for receiving the locating pins and aligning the detachable service unit onto the stationary unit. The detachable service unit and stationary unit have mating scalloped faces which aid in alignment and provide a mechanism for heat dissipation.

Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction

PubMed Central

Kobayashi, Yu; Yoshida, Shoji; Sakurada, Ryuji; Takashima, Kengo; Yamamoto, Takahiro; Saito, Tetsuki; Konabe, Satoru; Taniguchi, Takashi; Watanabe, Kenji; Maniwa, Yutaka; Takeuchi, Osamu; Shigekawa, Hidemi; Miyata, Yasumitsu

2016-01-01

Semiconductor heterojunction interfaces have been an important topic, both in modern solid state physics and in electronics and optoelectronics applications. Recently, the heterojunctions of atomically-thin transition metal dichalcogenides (TMDCs) are expected to realize one-dimensional (1D) electronic systems at their heterointerfaces due to their tunable electronic properties. Herein, we report unique conductivity enhancement and electrical potential modulation of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2. Scanning tunneling microscopy/spectroscopy analyses showed the formation of 1D confining potential (potential barrier) in the valence (conduction) band, as well as bandgap narrowing around the heterointerface. The modulation of electronic properties were also probed as the increase of current in conducting atomic force microscopy. Notably, the observed band bending can be explained by the presence of 1D fixed charges around the heterointerface. The present findings indicate that the atomic layer heterojunctions provide a novel approach to realizing tunable 1D electrical potential for embedded quantum wires and ultrashort barriers of electrical transport. PMID:27515115

Micro-cones on a liquid interface in high electric field: Ionization effects

NASA Astrophysics Data System (ADS)

Subbotin, Andrey V.; Semenov, Alexander N.

2018-02-01

We formulate and explore electrohydrodynamic equations for conductive liquids taking dissociation/recombination processes into account and discover a novel type of liquid cones which carry both surface and net bulk charge and can be formed on a liquid interface in an electric field. The bulk charge is generated by the corona discharge due to a high electric field at the cone apex. We establish correlation between the cone angle and physical parameters of the liquid on the one hand and the electric current passing through the cone on the other hand. It is shown that the current strongly increases when the cone angle tends to a critical value which is a function of the dielectric permittivity of the liquid. The cone stability with respect to axially symmetric perturbations is analyzed. It is shown that the cones with apex angles close to the critical angle are likely to be stable. The effect of the imposed flow on the cone apex stability is also discussed.

Role of structural relaxations and chemical substitutions on piezoelectric fields and potential lineup in GaN/Al junctions

NASA Astrophysics Data System (ADS)

Picozzi, S.; Profeta, G.; Continenza, A.; Massidda, S.; Freeman, A. J.

2002-04-01

First-principles full-potential linearized augmented plane wave calculations are performed to clarify the role of the interface geometry on piezoelectric fields and potential lineups in [0001] wurtzite and [111]-zincblende GaN/Al junctions. The electric field (polarity and magnitude) is found to be strongly affected by atomic relaxations in the interface region. A procedure is used to evaluate the Schottky-barrier height in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behavior of the GaN/Al contact, in agreement with experimental values for the barrier. We disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and the electric field) by studying unrelaxed ideal nitride/metal systems. Using simple electronegativity arguments, we outline the leading mechanisms that define the values of the electric field and Schottky barrier in these ideal systems. Finally, the transitivity rule is proved to be well satisfied.

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment

PubMed Central

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-01-01

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor. PMID:26671673

A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC71BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

NASA Astrophysics Data System (ADS)

Ahmad, Zubair; Abdullah, Shahino Mah; Taguchi, Dai; Sulaiman, Khaulah; Iwamoto, Mitsumasa

2015-04-01

Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC71BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC71BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC71BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

Feasibility study of wind-generated electricity for rural applications in southwestern Ohio

NASA Astrophysics Data System (ADS)

Kohring, G. W.

The parameters associated with domestic production of wind generated electricity for direct use by small farms and rural homes in the southwestern Ohio region are discussed. The project involves direct utility interfaced electricity generation from a horizontal axis, down-wind, fixed pitch, wind powered induction generator system. Goals of the project are to determine: the ability to produce useful amounts of domestic wind generated electricity in the southwestern Ohio region; economic justification for domestic wind generated electrical production; and the potential of domestic wind generated electricity for reducing dependence on non-renewable energy resources in the southwestern Ohio region.

Computer-Aided Engineering Of Cabling

NASA Technical Reports Server (NTRS)

Billitti, Joseph W.

1989-01-01

Program generates data sheets, drawings, and other information on electrical connections. DFACS program, centered around single data base, has built-in menus providing easy input of, and access to, data for all personnel involved in system, subsystem, and cabling. Enables parallel design of circuit-data sheets and drawings of harnesses. Also recombines raw information to generate automatically various project documents and drawings, including index of circuit-data sheets, list of electrical-interface circuits, lists of assemblies and equipment, cabling trees, and drawings of cabling electrical interfaces and harnesses. Purpose of program to provide engineering community with centralized data base for putting in, and gaining access to, functional definition of system as specified in terms of details of pin connections of end circuits of subsystems and instruments and data on harnessing. Primary objective to provide instantaneous single point of interchange of information, thus avoiding

Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage

NASA Astrophysics Data System (ADS)

Patrick, Erin; Law, Mark E.; Liu, Lu; Cuervo, Camilo Velez; Xi, Yuyin; Ren, Fan; Pearton, Stephen J.

2013-12-01

A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully explain the increased reliability observed experimentally. In short, the addition of negatively-charged traps in the GaN buffer layer does not significantly change the electric field at the gate edges at radiation fluence levels seen in this study. We propose that negative trapped charge at the nitride/AlGaN interface actually produces the virtual-gate effect that results in decreasing the magnitude of the electric field at the gate edges and thus the increase in critical voltage. Simulation results including nitride interface charge show significant changes in electric field profiles while the I-V device characteristics do not change.

Upper limb functional electrical stimulation devices and their man-machine interfaces.

PubMed

Venugopalan, L; Taylor, P N; Cobb, J E; Swain, I D

2015-01-01

Functional Electrical Stimulation (FES) is a technique that uses electricity to activate the nerves of a muscle that is paralysed due to hemiplegia, multiple sclerosis, Parkinson's disease or spinal cord injury (SCI). FES has been widely used to restore upper limb functions in people with hemiplegia and C5-C7 tetraplegia and has improved their ability to perform their activities of daily living (ADL). At the time of writing, a detailed literature review of the existing upper limb FES devices and their man-machine interfaces (MMI) showed that only the NESS H200 was commercially available. However, the rigid arm splint doesn't fit everyone and prevents the use of a tenodesis grip. Hence, a robust and versatile upper limb FES device that can be used by a wider group of people is required.

Synchronous inversion and charge extraction (SICE): a hybrid switching interface for efficient vibrational energy harvesting

NASA Astrophysics Data System (ADS)

Lallart, Mickaël; Wu, Wen-Jong; Hsieh, Yuchieh; Yan, Linjuan

2017-11-01

This paper aims at proposing an electrical interface taking advantage of nonlinear treatment for both significantly increasing the voltage of a piezoelectric device and extracting the corresponding electrostatic energy in an independent way from the connected electrical load. The principles of the proposed system lies in quickly inverting the piezoelectric voltage on each extremum (synchronized switch on inductor operations) for a given number of extremum occurrences, and then extracting the total electrostatic energy available on the piezoelectric element through the so-called synchronous electric charge extraction (SECE) for energy harvesting purpose. Compared to classical SECE approach, which consists in extracting the energy on each voltage extremum occurrence, the proposed scheme shows a significant improvement in low-coupled systems thanks to a fine control of the trade-off between voltage amplification and number of extraction events.

Electrical design of payload G-534: The Pool Boiling Experiment

NASA Technical Reports Server (NTRS)

Francisco, David R.

1992-01-01

Payload G-534, the Pool Boiling Experiment (PBE), is a Get Away Special that is scheduled to fly on the shuttle in 1992. This paper will give a brief overall description of the experiment with the main discussion being the electrical design with a detailed description of the power system and interface to the GAS electronics. The batteries used and their interface to the experiment Power Control Unit (PCU) and GAS electronics will be examined. The design philosophy for the PCU will be discussed in detail. The criteria for selection of fuses, relays, power semiconductors and other electrical components along with grounding and shielding policy for the entire experiment will be presented. The intent of this paper is to discuss the use of military tested parts and basic design guidelines to build a quality experiment for minimal additional cost.

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

PubMed

Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

2015-04-01

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar <0 0 0 1> direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements.

PubMed

Kim, Seongmin; Kim, Hwansoo; Janes, David B; Ju, Sanghyun

2013-08-02

Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.

Silicon switching transistor with high power and low saturation voltage

NASA Technical Reports Server (NTRS)

Stonebraker, E.; Stoneburner, D.; Ferree, H.

1973-01-01

Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.

Electrical properties of MOS devices fabricated on the 4H-SiC C-face.

NASA Astrophysics Data System (ADS)

Chen, Zengjun; Ahyi, A. C.; Williams, J. R.

2007-11-01

The electrical characteristics of MOS devices fabricated on the carbon face of 4H-SiC will be described. The C-face has a higher oxidation rate and a higher interface trap density compared to the Si-face. The thermal oxidation rate and the distribution of interface traps under different oxidation conditions will be discussed in this presentation. Sequential post-oxidation anneals in nitric oxide and hydrogen effectively reduces the interface density (Dit) near the conduction band edge. However, deeper in the band gap, the trap density remains higher compared to the Si-face. Time-dependent dielectric breakdown (TDDB) studies have also been performed to investigate oxide reliability on the C-face, and current-voltage measurements show that a low barrier height against carrier injection likely contributes to oxide degradation. Nevertheless, the effective channel mobility and threshold voltage for n-channel C-face lateral MOSFETs compare favorably with similar Si-face devices.

Electrohydrodynamic simulation of an electrospray in a colloid thruster

NASA Astrophysics Data System (ADS)

Jugroot, Manish; Forget, Martin; Malardier-Jugroot, Cecile

2012-02-01

A precise understanding of electrosprays is highly interesting as the complexity of micro-technology (such as nano-material processing, spacecraft propulsion and mass-spectrometers) systems increases. A multi-component CFD-based model coupling fluid dynamics, charged species dynamics and electric field is developed. The simulations describe the charged fluid interface with emphasis on the Taylor cone formation and cone-jet transition under the effect of a electric field. The goal is to recapture this transition from a rounded liquid interface into a Taylor cone from an initial uniform distribution, without making assumptions on the behaviour, geometry or charge distribution of the system. The time evolution of the interface highlights the close interaction among space charge, coulombic forces and the surface tension, which appear as governing and competing processes in the transition. The results from the coupled formalism provide valuable insights on the physical phenomena and will be applied to a colloid thruster for small spacecrafts.

Light-evoked hyperpolarization and silencing of neurons by conjugated polymers.

PubMed

Feyen, Paul; Colombo, Elisabetta; Endeman, Duco; Nova, Mattia; Laudato, Lucia; Martino, Nicola; Antognazza, Maria Rosa; Lanzani, Guglielmo; Benfenati, Fabio; Ghezzi, Diego

2016-03-04

The ability to control and modulate the action potential firing in neurons represents a powerful tool for neuroscience research and clinical applications. While neuronal excitation has been achieved with many tools, including electrical and optical stimulation, hyperpolarization and neuronal inhibition are typically obtained through patch-clamp or optogenetic manipulations. Here we report the use of conjugated polymer films interfaced with neurons for inducing a light-mediated inhibition of their electrical activity. We show that prolonged illumination of the interface triggers a sustained hyperpolarization of the neuronal membrane that significantly reduces both spontaneous and evoked action potential firing. We demonstrate that the polymeric interface can be activated by either visible or infrared light and is capable of modulating neuronal activity in brain slices and explanted retinas. These findings prove the ability of conjugated polymers to tune neuronal firing and suggest their potential application for the in-vivo modulation of neuronal activity.

Light-evoked hyperpolarization and silencing of neurons by conjugated polymers

PubMed Central

Feyen, Paul; Colombo, Elisabetta; Endeman, Duco; Nova, Mattia; Laudato, Lucia; Martino, Nicola; Antognazza, Maria Rosa; Lanzani, Guglielmo; Benfenati, Fabio; Ghezzi, Diego

2016-01-01

The ability to control and modulate the action potential firing in neurons represents a powerful tool for neuroscience research and clinical applications. While neuronal excitation has been achieved with many tools, including electrical and optical stimulation, hyperpolarization and neuronal inhibition are typically obtained through patch-clamp or optogenetic manipulations. Here we report the use of conjugated polymer films interfaced with neurons for inducing a light-mediated inhibition of their electrical activity. We show that prolonged illumination of the interface triggers a sustained hyperpolarization of the neuronal membrane that significantly reduces both spontaneous and evoked action potential firing. We demonstrate that the polymeric interface can be activated by either visible or infrared light and is capable of modulating neuronal activity in brain slices and explanted retinas. These findings prove the ability of conjugated polymers to tune neuronal firing and suggest their potential application for the in-vivo modulation of neuronal activity. PMID:26940513

Surface and interface modification science and technology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.-H.

1999-07-19

Surface modification of solids is of scientific and technological interest due to its significant benefits in a wide variety of applications. Various coatings applications such as corrosion protection and electrical insulators and conductors are required for proper engineering design based on geometrical relationships between interfaces and on thermodynamic/kinetic considerations for the development of surface modifications. This paper will explore three basic examples: the proton conductor BaCeO{sub 3}, high-temperature protective coatings, and epitaxial relationships between interfaces.

Portable Life Support System: PLSS 101

NASA Technical Reports Server (NTRS)

Thomas, Gretchen A.

2011-01-01

This presentation reviewed basic interfaces and considerations necessary for prototype suit hardware integration from an advanced spacesuit engineer perspective during the early design and test phases. The discussion included such topics such as the human interface, suit pass-throughs, keep-out zones, hardware form factors, subjective feedback from suit tests, and electricity in the suit.

Metal/oxide/semiconductor interface investigated by monoenergetic positrons

NASA Astrophysics Data System (ADS)

Uedono, A.; Tanigawa, S.; Ohji, Y.

1988-10-01

Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

NASA Astrophysics Data System (ADS)

Shaneyfelt, M. R.; Schwank, J. R.; Fleetwood, D. M.; Winokur, P. S.; Hughes, K. L.

1990-12-01

The electric field dependence of radiation-induced oxide- and interface-trap charge (Delta Vot and Delta Vit) generation for polysilicon- and metal-gate MOS transistors is investigated at electric fields (Eox) from -4.2 MV/cm to +4.7 MV/cm. If electron-hole recombination effects are taken into account, the absolute value of Delta Vot and the saturated value of Delta Vit for both polysilicon- and metal-gate transistors are shown to follow an approximate E exp -1/2 field dependence for Eox = 0.4 MV/cm or greater. An E exp -1/2 dependence for the saturated value of Delta Vit was also observed for negative-bias irradiation followed by a constant positive-bias anneal. The E exp -1/2 field dependence observed suggests that the total number of interface traps created in these devices may be determined by hole trapping near the Si/SiO2 interface for positive-bias irradiation or near the gate/SiO2 interface for negative bias irradiation, though H+ drift remains the likely rate-limiting step in the process. Based on these results, a hole-trapping/hydrogen transport model-involving hole trapping and subsequent near-interfacial H+ release, transport, and reaction at the interface-is proposed as a possible explanation of Delta Vit buildup in these polysilicon- and metal-gate transistors.

Molecular dynamics of the water liquid-vapor interface

NASA Technical Reports Server (NTRS)

Wilson, M. A.; Pohorille, A.; Pratt, L. R.; MacElroy, R. D. (Principal Investigator)

1987-01-01

The results of molecular dynamics calculations on the equilibrium interface between liquid water and its vapor at 325 K are presented. For the TIP4P model of water intermolecular pair potentials, the average surface dipole density points from the vapor to the liquid. The most common orientations of water molecules have the C2 nu molecular axis roughly parallel to the interface. The distributions are quite broad and therefore compatible with the intermolecular correlations characteristic of bulk liquid water. All near-neighbor pairs in the outermost interfacial layers are hydrogen bonded according to the common definition adopted here. The orientational preferences of water molecules near a free surface differ from those near rigidly planar walls which can be interpreted in terms of patterns found in hexagonal ice 1. The mean electric field in the interfacial region is parallel to the mean polarization which indicates that attention cannot be limited to dipolar charge distributions in macroscopic descriptions of the electrical properties of this interface. The value of the surface tension obtained is 132 +/- 46 dyn/cm, significantly different from the value for experimental water of 68 dyn/cm at 325 K.

Skills based evaluation of alternative input methods to command a semi-autonomous electric wheelchair.

PubMed

Rojas, Mario; Ponce, Pedro; Molina, Arturo

2016-08-01

This paper presents the evaluation, under standardized metrics, of alternative input methods to steer and maneuver a semi-autonomous electric wheelchair. The Human-Machine Interface (HMI), which includes a virtual joystick, head movements and speech recognition controls, was designed to facilitate mobility skills for severely disabled people. Thirteen tasks, which are common to all the wheelchair users, were attempted five times by controlling it with the virtual joystick and the hands-free interfaces in different areas for disabled and non-disabled people. Even though the prototype has an intelligent navigation control, based on fuzzy logic and ultrasonic sensors, the evaluation was done without assistance. The scored values showed that both controls, the head movements and the virtual joystick have similar capabilities, 92.3% and 100%, respectively. However, the 54.6% capacity score obtained for the speech control interface indicates the needs of the navigation assistance to accomplish some of the goals. Furthermore, the evaluation time indicates those skills which require more user's training with the interface and specifications to improve the total performance of the wheelchair.

Electrical characteristic of the titanium mesh electrode for transcutaneous intrabody communication to monitor implantable artificial organs.

PubMed

Okamoto, Eiji; Kikuchi, Sakiko; Mitamura, Yoshinori

2016-09-01

We have developed a tissue-inducing electrode using titanium mesh to obtain mechanically and electrically stable contact with the tissue for a new transcutaneous communication system using the human body as a conductive medium. In this study, we investigated the electrical properties of the titanium mesh electrode by measuring electrode-tissue interface resistance in vivo. The titanium mesh electrode (Hi-Lex Co., Zellez, Hyogo, Japan) consisted of titanium fibers (diameter of 50 μm), and it has an average pore size of 200 μm and 87 % porosity. The titanium mesh electrode has a diameter of 5 mm and thickness of 1.5 mm. Three titanium mesh electrodes were implanted separately into the dorsal region of the rat. We measured the electrode-electrode impedance using an LCR meter for 12 weeks, and we calculated the tissue resistivity and electrode-tissue interface resistance. The electrode-tissue interface resistance of the titanium mesh electrode decreased slightly until the third POD and then continuously increased to 75 Ω. The electrode-tissue interface resistance of the titanium mesh electrode is stable and it has lower electrode-tissue interface resistance than that of a titanium disk electrode. The extracted titanium mesh electrode after 12 weeks implantation was fixed in 10 % buffered formalin solution and stained with hematoxylin-eosin. Light microscopic observation showed that the titanium mesh electrode was filled with connective tissue, inflammatory cells and fibroblasts with some capillaries in the pores of the titanium mesh. The results indicate that the titanium mesh electrode is a promising electrode for the new transcutaneous communication system.

An Online Virtual Laboratory of Electricity

ERIC Educational Resources Information Center

Gómez Tejedor, J. A.; Moltó Martínez, G.; Barros Vidaurre, C.

2008-01-01

In this article, we describe a Java-based virtual laboratory, accessible via the Internet by means of a Web browser. This remote laboratory enables the students to build both direct and alternating current circuits. The program includes a graphical user interface which resembles the connection board, and also the electrical components and tools…

Piezo-phototronic effect devices

DOEpatents

Wang, Zhong L.; Yang, Qing

2013-09-10

A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Design and Modelling of a Microfluidic Electro-Lysis Device with Controlling Plates

NASA Technical Reports Server (NTRS)

Jenkins, A.; Chen, C. P.; Spearing, S.; Monaco, L. A.; Steele, A.; Flores, G.

2006-01-01

Many Lab-on-Chip applications require sample pre-treatment systems. Using electric fields to perform cell-lysis in bio-MEMS systems has provided a powerful tool which can be integrated into Lab-on-a-Chip platforms. The major design considerations for electro-lysis devices include optimal geometry and placement of micro-electrodes, cell concentration, flow rates, optimal electric field (e.g. pulsed DC vs. AC), etc. To avoid electrolysis of the flowing solution at the exposed electrode surfaces, magnitudes and the applied voltages and duration of the DC pulse, or the AC frequency of the AC, have to be optimized for a given configuration. Using simulation tools for calculation of electric fields has proved very useful, for exploring alternative configurations and operating conditions for achieving electro cell-lysis. To alleviate the problem associated with low electric fields within the microfluidics channel and the high voltage demand on the contact electrode strips, two "control plates" are added to the microfluidics configuration. The principle of placing the two controlling plate-electrodes is based on the electric fields generated by a combined insulator/dielectric (gladwater) media. Surface charges are established at the insulator/dielectric interface. This paper discusses the effects of this interface charge on the modification of the electric field of the flowing liquid/cell solution.

Design and Modelling of a Microfluidic Electro-Lysis Device with Controlling Plates

NASA Astrophysics Data System (ADS)

Jenkins, A.; Chen, C. P.; Spearing, S.; Monaco, L. A.; Steele, A.; Flores, G.

2006-04-01

Many Lab-on-Chip applications require sample pre-treatment systems. Using electric fields to perform cell lysis in bio-MEMS systems has provided a powerful tool which can be integrated into Lab-on-a- Chip platforms. The major design considerations for electro-lysis devices include optimal geometry and placement of micro-electrodes, cell concentration, flow rates, optimal electric field (e.g. pulsed DC vs. AC), etc. To avoid electrolysis of the flowing solution at the exposed electrode surfaces, magnitudes and the applied voltages and duration of the DC pulse, or the AC frequency of the AC, have to be optimized for a given configuration. Using simulation tools for calculation of electric fields has proved very useful, for exploring alternative configurations and operating conditions for achieving electro cell-lysis. To alleviate the problem associated with low electric fields within the microfluidics channel and the high voltage demand on the contact electrode strips, two ''control plates'' are added to the microfluidics configuration. The principle of placing the two controlling plate-electrodes is based on the electric fields generated by a combined insulator/dielectric (glass/water) media. Surface charges are established at the insulator/dielectric interface. This paper discusses the effects of this interface charge on the modification of the electric field of the flowing liquid/cell solution.

Novel design of electrical sensing interface for prosthetic limbs using optical micro cavities

NASA Astrophysics Data System (ADS)

Ali, Amir R.; Kamel, Mohamed A.

2018-04-01

This paper uses optical whispering galley modes (WGM) cavities to construct a new electrical sensing interface between prosthetic limb and the brain. The sensing element will detect the action potential signal in the neural membrane and the prosthetic limb will be actuated accordingly. The element is a WGM dielectric polymeric cavity. WGM based optical cavities can achieve very high values of sensitivity and quality factor; thus, any minute perturbations in the morphology of the cavity can be captured and measured. The action potential signal will produce an applied external electric field on the dielectric cavity causing it to deform due to the electrostriction effect. The resulting deformation will cause WGM shifts in the transmission spectrum of the cavity. Thus, the action potential or the applied electric field can be measured using these shifts. In this paper the action potential signal will be simulated through the use of a function generator and two metal electrodes. The sensing element will be situated between these electrodes to detect the electrical signal passing through. The achieved sensitivity is 27.5 pm/V in measuring the simulated action potential signal; and 0.32 pm/V.m-1 in measuring the applied electric field due to the passage of the simulated signal.

Electrical properties of double layer dielectric structures for space technology

NASA Astrophysics Data System (ADS)

Lian, Anqing

1993-04-01

Polymeric films such as polyimide (PI) and polyethylene terephthalate (PET) are used in space technology as thermal blankets. Thin SiO2 and SiN coatings plasma deposited onto PI and PET surfaces were proposed to protect the blanket materials against the space environment. The electrical properties of this kind of dual layer dielectric structure were investigated to understand the mechanisms for suppressing charge accumulation and flashover. Bulk and surface electrical conductivities of thin single-layer PI and PET samples and of the dual layer SiO2 and SiN combinations with PI and PET were measured in a range of applied electrical fields. The capacitance voltage (CV) technique was used for analyzing charge transport and distribution in the structures. The electric current in the bulk of the SiO2/PI and SiN/PI samples was found to depend on the polarity of the electric field. Other samples did not exhibit any such polarity effect. The polarity dependence is attributed to charge trapping at the PI/plasma deposit interface. The CV characteristics of the Al-PI-SiO2-Si structure confirm that charges which can modify the local electric field can be trapped near the interface. A model is proposed to interpret the properties of the currents in dual layer structures. This model can semi-quantitatively explain all the observed results.

Electric polarization switching in an atomically thin binary rock salt structure

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

2018-01-01

Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

Dielectric collapse at the LaAlO 3/SrTiO 3 (001) heterointerface under applied electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minohara, M.; Hikita, Y.; Bell, C.

The fascinating interfacial transport properties at the LaAlO 3/SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3/SrTiO 3 (001) heterointerface using soft andmore » hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.« less

Dielectric collapse at the LaAlO 3/SrTiO 3 (001) heterointerface under applied electric field

DOE PAGES

Minohara, M.; Hikita, Y.; Bell, C.; ...

2017-08-25

The fascinating interfacial transport properties at the LaAlO 3/SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3/SrTiO 3 (001) heterointerface using soft andmore » hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.« less

Interface characterization of Cu-Mo coating deposited on Ti-Al alloys by arc spraying

NASA Astrophysics Data System (ADS)

Bai, Shengqiang; Li, Fei; Wu, Ting; Yin, Xianglin; Shi, Xun; Chen, Lidong

2015-03-01

Cu-Mo pseudobinary alloys are promising candidates as electrode materials in CoSb3-based skutterudite thermoelectric (TE) devices for TE power generation. In this study, Cu-Mo coatings were deposited onto Ti-Al substrates by applying a dual-wire electric arc spraying coating technique. The microstructure of the surfaces, cross sections and coating interfaces were analyzed by scanning electron microscopy (SEM) and energy dispersion spectrometry (EDS). Cu-Mo coatings showed a typical banded splat with compact microstructures, and have no coarse pores nor micro-cracks. The thermal shock resistance of the Cu-Mo coating was also investigated to show good combinations with Ti-Al substrates. After 50 thermal shock cycles, there were no cracks observed at the interface. In contrast, the test of the thermal shock resistance of the Cu coating on the Ti-Al substrate was also investigated. Due to a large difference in the thermal expansion coefficients between Cu and Ti-Al alloys, the Cu coating flaked from the Ti-Al substrate completely after 10 thermal shock cycles. The contact resistivity of the Ti-Al/Cu-Mo interface was about 1.6 μΩṡcm2 and this value was unchanged after 50 thermal shock cycles, indicating the low electric resistance and high thermal stability of the Cu-Mo/Ti-Al interface.

Using Molecular Dynamics to quantify the electrical double layer and examine the potential for its direct observation in the in-situ TEM

DOE PAGES

Welch, David A.; Mehdi, Beata L.; Hatchell, Hanna J.; ...

2015-03-25

Understanding the fundamental processes taking place at the electrode-electrolyte interface in batteries will play a key role in the development of next generation energy storage technologies. One of the most fundamental aspects of the electrode-electrolyte interface is the electrical double layer (EDL). Given the recent development of high spatial resolution in-situ electrochemical cells for scanning transmission electron microscopy (STEM), there now exists the possibility that we can directly observe the formation and dynamics of the EDL. In this paper we predict electrolyte structure within the EDL using classical models and atomistic Molecular Dynamics (MD) simulations. The MD simulations show thatmore » the classical models fail to accurately reproduce concentration profiles that exist within the electrolyte. It is thus suggested that MD must be used in order to accurately predict STEM images of the electrode-electrolyte interface. Using MD and image simulations together for a high contrast electrolyte (the high atomic number CsCl electrolyte), it is determined that, for a smooth interface, concentration profiles within the EDL should be visible experimentally. When normal experimental parameters such as rough interfaces and low-Z electrolytes (like those used in Li-ion batteries) are considered, observation of the EDL appears to be more difficult.« less

Ultrafast direct electron transfer at organic semiconductor and metal interfaces.

PubMed

Xiang, Bo; Li, Yingmin; Pham, C Huy; Paesani, Francesco; Xiong, Wei

2017-11-01

The ability to control direct electron transfer can facilitate the development of new molecular electronics, light-harvesting materials, and photocatalysis. However, control of direct electron transfer has been rarely reported, and the molecular conformation-electron dynamics relationships remain unclear. We describe direct electron transfer at buried interfaces between an organic polymer semiconductor film and a gold substrate by observing the first dynamical electric field-induced vibrational sum frequency generation (VSFG). In transient electric field-induced VSFG measurements on this system, we observe dynamical responses (<150 fs) that depend on photon energy and polarization, demonstrating that electrons are directly transferred from the Fermi level of gold to the lowest unoccupied molecular orbital of organic semiconductor. Transient spectra further reveal that, although the interfaces are prepared without deliberate alignment control, a subensemble of surface molecules can adopt conformations for direct electron transfer. Density functional theory calculations support the experimental results and ascribe the observed electron transfer to a flat-lying polymer configuration in which electronic orbitals are found to be delocalized across the interface. The present observation of direct electron transfer at complex interfaces and the insights gained into the relationship between molecular conformations and electron dynamics will have implications for implementing novel direct electron transfer in energy materials.

Modeling Auditory-Haptic Interface Cues from an Analog Multi-line Telephone

NASA Technical Reports Server (NTRS)

Begault, Durand R.; Anderson, Mark R.; Bittner, Rachael M.

2012-01-01

The Western Electric Company produced a multi-line telephone during the 1940s-1970s using a six-button interface design that provided robust tactile, haptic and auditory cues regarding the "state" of the communication system. This multi-line telephone was used as a model for a trade study comparison of two interfaces: a touchscreen interface (iPad)) versus a pressure-sensitive strain gauge button interface (Phidget USB interface controllers). The experiment and its results are detailed in the authors' AES 133rd convention paper " Multimodal Information Management: Evaluation of Auditory and Haptic Cues for NextGen Communication Dispays". This Engineering Brief describes how the interface logic, visual indications, and auditory cues of the original telephone were synthesized using MAX/MSP, including the logic for line selection, line hold, and priority line activation.

Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter

2016-06-10

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the filmmore » and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.« less

Electric potential distributions at the interface between plasmasheet clouds

NASA Technical Reports Server (NTRS)

Evans, D. S.; Roth, M.; Lemaire, J.

1987-01-01

At the interface between two plasma clouds with different densities, temperatures, and/or bulk velocities, there are large charge separation electric fields which can be modeled in the framework of a collisionless theory for tangential discontinuities. Two different classes of layers were identified: the first one corresponds to (stable) ion layers which are thicker than one ion Lamor radius; the second one corresponds to (unstable) electron layers which are only a few electron Larmor radii thick. It is suggested that these thin electron layers with large electric potential gradients (up to 400 mV/m) are the regions where large-amplitude electrostatic waves are spontaneously generated. These waves scatter the pitch angles of the ambient plasmasheet electron into the atmospheric loss cone. The unstable electron layers can therefore be considered as the seat of strong pitch angle scattering for the primary auroral electrons.

Electrical design of Space Shuttle payload G-534: The pool boiling experiment

NASA Technical Reports Server (NTRS)

Francisco, David R.

1993-01-01

Payload G-534, the Pool Boiling Experiment (PBE), is a Get Away Special (GAS) payload that flew on the Space Shuttle Spacelab Mission J (STS 47) on September 19-21, 1992. This paper will give a brief overall description of the experiment with the main discussion being the electrical design with a detailed description of the power system and interface to the GAS electronics. The batteries used and their interface to the experiment Power Control Unit (PCU) and GAS electronics will be examined. The design philosophy for the PCU will be discussed in detail. The criteria for selection of fuses, relays, power semiconductors, and other electrical components along with grounding and shielding policy for the entire experiment are presented. The intent of this paper is to discuss the use of military tested parts and basic design guidelines to build a quality experiment for minimal additional cost.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

NASA Astrophysics Data System (ADS)

Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

Magneto-ionic control of interfacial magnetism

NASA Astrophysics Data System (ADS)

Bauer, Uwe; Yao, Lide; Tan, Aik Jun; Agrawal, Parnika; Emori, Satoru; Tuller, Harry L.; van Dijken, Sebastiaan; Beach, Geoffrey S. D.

2015-02-01

In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here, we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magneto-electric coupling mechanisms. We directly observe in situ voltage-driven O2- migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.75 erg cm-2 at just 2 V. We exploit the thermally activated nature of ion migration to markedly increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

DOE PAGES

Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; ...

2016-06-10

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In 2O 3 films grown on ionically conducting Y 2O 3-stabilized ZrO 2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygenmore » vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.« less

Space shuttle engineering and operations support. Orbiter to spacelab electrical power interface. Avionics system engineering

NASA Technical Reports Server (NTRS)

Emmons, T. E.

1976-01-01

The results are presented of an investigation of the factors which affect the determination of Spacelab (S/L) minimum interface main dc voltage and available power from the orbiter. The dedicated fuel cell mode of powering the S/L is examined along with the minimum S/L interface voltage and available power using the predicted fuel cell power plant performance curves. The values obtained are slightly lower than current estimates and represent a more marginal operating condition than previously estimated.

Economic analysis of standard interface modules for use with the multi-mission spacecraft. Volume 2: Appendices and drawings

NASA Technical Reports Server (NTRS)

Greenberg, J. S.; Miller, B. P.; Russell, S.; Becar, N.

1976-01-01

The cost savings that could be obtained by the use of SIM to perform certain sensor electrical interfacing functions that were historically an integral part of the sensor are evaluated. Reduction in both the nonrecurring and recurring costs of this sensor interface hardware could be achieved through the use of SIM, and the study concludes that the development and use of certain power conditioning and data handling SIM units are economically justified.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat

In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

Carbon nanotube-based multi electrode arrays for neuronal interfacing: progress and prospects

PubMed Central

Bareket-Keren, Lilach; Hanein, Yael

2013-01-01

Carbon nanotube (CNT) coatings have been demonstrated over the past several years as a promising material for neuronal interfacing applications. In particular, in the realm of neuronal implants, CNTs have major advantages owing to their unique mechanical and electrical properties. Here we review recent investigations utilizing CNTs in neuro-interfacing applications. Cell adhesion, neuronal engineering and multi electrode recordings with CNTs are described. We also highlight prospective advances in this field, in particular, progress toward flexible, bio-compatible CNT-based technology. PMID:23316141

Low energy stage study. Volume 3: Conceptual design, interface analysis, flight and ground operations. [launching space shuttle payloads

NASA Technical Reports Server (NTRS)

1978-01-01

Low energy conceptual stage designs and adaptations to existing/planned shuttle upper stages were developed and their performance established. Selected propulsion modes and subsystems were used as a basis to develop airborne support equipment (ASE) design concepts. Orbiter installation and integration (both physical and electrical interfaces) were defined. Low energy stages were adapted to the orbiter and ASE interfaces. Selected low energy stages were then used to define and describe typical ground and flight operations.

Exploring Electrical and Magnetic Resonances from Coherently Correlated Long-Lived Radical Pairs towards Development of Negative Refractive-Index Materials

DTIC Science & Technology

2015-01-03

Dissociation in Perovskite Solar Cells Yu-Che Hsiao, Ting Wu, Mingxing Li, and Bin Hu Advanced Materials, DOI: 10.1002/adma.201405946, 2015 2...Electrode Interface and Donor/Acceptor Interface via Charge Dissociation in Organic Solar Cells at Device-Operating Condition Ting Wu, Yu-Che Hsiao...exchange energy at donor:acceptor interfaces in organic solar cells Mingxing Li, Hongfeng Wang, Lei He, Huidong Zang, Hengxing Xu, and Bin Hu Appl

Electric vehicle station equipment for grid-integrated vehicles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kempton, Willett; Kiamilev, Fouad; McGee, Rodney

Methods, systems, and apparatus transferring power between the grid and an electric vehicle are disclosed. The apparatus may include at least one vehicle communication port for interfacing with electric vehicle equipment (EVE) and a processor coupled to the at least one vehicle communication port to establish communication with the EVE, receive EVE attributes from the EVE, and transmit electric vehicle station equipment (EVSE) attributes to the EVE. Power may be transferred between the grid and the electric vehicle by maintaining EVSE attributes, establishing communication with the EVE, and transmitting the EVSE maintained attributes to the EVE.

Interface Electronic Circuitry for an Electronic Tongue

NASA Technical Reports Server (NTRS)

Keymeulen, Didier; Buehler, Martin

2007-01-01

Electronic circuitry has been developed to serve as an interface between an electronic tongue and digital input/output boards in a laptop computer that is used to control the tongue and process its readings. Electronic tongues can be used for a variety of purposes, including evaluating water quality, analyzing biochemicals, analyzing biofilms, and measuring electrical conductivities of soils.

Water liquid-vapor interface subjected to various electric fields: A molecular dynamics study.

PubMed

Nikzad, Mohammadreza; Azimian, Ahmad Reza; Rezaei, Majid; Nikzad, Safoora

2017-11-28

Investigation of the effects of E-fields on the liquid-vapor interface is essential for the study of floating water bridge and wetting phenomena. The present study employs the molecular dynamics method to investigate the effects of parallel and perpendicular E-fields on the water liquid-vapor interface. For this purpose, density distribution, number of hydrogen bonds, molecular orientation, and surface tension are examined to gain a better understanding of the interface structure. Results indicate enhancements in parallel E-field decrease the interface width and number of hydrogen bonds, while the opposite holds true in the case of perpendicular E-fields. Moreover, perpendicular fields disturb the water structure at the interface. Given that water molecules tend to be parallel to the interface plane, it is observed that perpendicular E-fields fail to realign water molecules in the field direction while the parallel ones easily do so. It is also shown that surface tension rises with increasing strength of parallel E-fields, while it reduces in the case of perpendicular E-fields. Enhancement of surface tension in the parallel field direction demonstrates how the floating water bridge forms between the beakers. Finally, it is found that application of external E-fields to the liquid-vapor interface does not lead to uniform changes in surface tension and that the liquid-vapor interfacial tension term in Young's equation should be calculated near the triple-line of the droplet. This is attributed to the multi-directional nature of the droplet surface, indicating that no constant value can be assigned to a droplet's surface tension in the presence of large electric fields.

EDITORIAL: Focus on the neural interface Focus on the neural interface

NASA Astrophysics Data System (ADS)

Durand, Dominique M.

2009-10-01

The possibility of an effective connection between neural tissue and computers has inspired scientists and engineers to develop new ways of controlling and obtaining information from the nervous system. These applications range from `brain hacking' to neural control of artificial limbs with brain signals. Notwithstanding the significant advances in neural prosthetics in the last few decades and the success of some stimulation devices such as cochlear prosthesis, neurotechnology remains below its potential for restoring neural function in patients with nervous system disorders. One of the reasons for this limited impact can be found at the neural interface and close attention to the integration between electrodes and tissue should improve the possibility of successful outcomes. The neural interfaces research community consists of investigators working in areas such as deep brain stimulation, functional neuromuscular/electrical stimulation, auditory prostheses, cortical prostheses, neuromodulation, microelectrode array technology, brain-computer/machine interfaces. Following the success of previous neuroprostheses and neural interfaces workshops, funding (from NIH) was obtained to establish a biennial conference in the area of neural interfaces. The first Neural Interfaces Conference took place in Cleveland, OH in 2008 and several topics from this conference have been selected for publication in this special section of the Journal of Neural Engineering. Three `perspectives' review the areas of neural regeneration (Corredor and Goldberg), cochlear implants (O'Leary et al) and neural prostheses (Anderson). Seven articles focus on various aspects of neural interfacing. One of the most popular of these areas is the field of brain-computer interfaces. Fraser et al, report on a method to generate robust control with simple signal processing algorithms of signals obtained with electrodes implanted in the brain. One problem with implanted electrode arrays, however, is that they can fail to record reliably neural signals for long periods of time. McConnell et al show that by measuring the impedance of the tissue, one can evaluate the extent of the tissue response to the presence of the electrode. Another problem with the neural interface is the mismatch of the mechanical properties between electrode and tissue. Basinger et al use finite element modeling to analyze this mismatch in retinal prostheses and guide the design of new implantable devices. Electrical stimulation has been the method of choice to activate externally the nervous system. However, Zhang et al show that a novel dual hybrid device integrating electrical and optical stimulation can provide an effective interface for simultaneous recording and stimulation. By interfacing an EMG recording system and a movement detection system, Johnson and Fuglevand develop a model capable of predicting muscle activity during movement that could be important for the development of motor prostheses. Sensory restoration is another unsolved problem in neural prostheses. By developing a novel interface between the dorsal root ganglia and electrodes arrays, Gaunt et al show that it is possible to recruit afferent fibers for sensory substitution. Finally, by interfacing directly with muscles, Jung and colleagues show that stimulation of muscles involved in locomotion following spinal cord damage in rats can provide an effective treatment modality for incomplete spinal cord injury. This series of articles clearly shows that the interface is indeed one of the keys to successful therapeutic neural devices. The next Neural Interfaces Conference will take place in Los Angeles, CA in June 2010 and one can expect to see new developments in neural engineering obtained by focusing on the neural interface.

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Positron Annihilation Ratio Spectroscopy Study of Electric Fields Applied to Positronium at Material Interfaces

DTIC Science & Technology

2011-03-01

from 142 ns to a few ns [3:3]. Through the application of positron annihilation lifetime spectroscopy (PALS) on a material, the o-Ps lifetime can be...Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. POSITRON ANNIHILATION RATIO SPECTROSCOPY STUDY OF ELECTRIC FIELDS APPLIED TO...protection in the United States. AFIT/GNE/ENP/11-M19 POSITRON ANNIHILATION RATIO SPECTROSCOPY STUDY OF ELECTRIC FIELDS APPLIED TO POSITRONIUM AT

Seismoelectric numerical modeling on a grid

USGS Publications Warehouse

Haines, S.S.; Pride, S.R.

2006-01-01

Our finite-difference algorithm provides a new method for simulating how seismic waves in arbitrarily heterogeneous porous media generate electric fields through an electrokinetic mechanism called seismoelectric coupling. As the first step in our simulations, we calculate relative pore-fluid/grain-matrix displacement by using existing poroelastic theory. We then calculate the electric current resulting from the grain/fluid displacement by using seismoelectric coupling theory. This electrofiltration current acts as a source term in Poisson's equation, which then allows us to calculate the electric potential distribution. We can safely neglect induction effects in our simulations because the model area is within the electrostatic near field for the depth of investigation (tens to hundreds of meters) and the frequency ranges (10 Hz to 1 kHz) of interest for shallow seismoelectric surveys.We can independently calculate the electric-potential distribution for each time step in the poroelastic simulation without loss of accuracy because electro-osmotic feedback (fluid flow that is perturbed by generated electric fields) is at least 105 times smaller than flow that is driven by fluid-pressure gradients and matrix acceleration, and is therefore negligible. Our simulations demonstrate that, distinct from seismic reflections, the seismoelectric interface response from a thin layer (at least as thin as one-twentieth of the seismic wavelength) is considerably stronger than the response from a single interface. We find that the interface response amplitude decreases as the lateral extent of a layer decreases below the width of the first Fresnel zone. We conclude, on the basis of our modeling results and of field results published elsewhere, that downhole and/or crosswell survey geometries and time-lapse applications are particularly well suited to the seismoelectric method. ?? 2006 Society of Exploration Geophysicists.

Neuromechanism Study of Insect–Machine Interface: Flight Control by Neural Electrical Stimulation

PubMed Central

Zhao, Huixia; Zheng, Nenggan; Ribi, Willi A.; Zheng, Huoqing; Xue, Lei; Gong, Fan; Zheng, Xiaoxiang; Hu, Fuliang

2014-01-01

The insect–machine interface (IMI) is a novel approach developed for man-made air vehicles, which directly controls insect flight by either neuromuscular or neural stimulation. In our previous study of IMI, we induced flight initiation and cessation reproducibly in restrained honeybees (Apis mellifera L.) via electrical stimulation of the bilateral optic lobes. To explore the neuromechanism underlying IMI, we applied electrical stimulation to seven subregions of the honeybee brain with the aid of a new method for localizing brain regions. Results showed that the success rate for initiating honeybee flight decreased in the order: α-lobe (or β-lobe), ellipsoid body, lobula, medulla and antennal lobe. Based on a comparison with other neurobiological studies in honeybees, we propose that there is a cluster of descending neurons in the honeybee brain that transmits neural excitation from stimulated brain areas to the thoracic ganglia, leading to flight behavior. This neural circuit may involve the higher-order integration center, the primary visual processing center and the suboesophageal ganglion, which is also associated with a possible learning and memory pathway. By pharmacologically manipulating the electrically stimulated honeybee brain, we have shown that octopamine, rather than dopamine, serotonin and acetylcholine, plays a part in the circuit underlying electrically elicited honeybee flight. Our study presents a new brain stimulation protocol for the honeybee–machine interface and has solved one of the questions with regard to understanding which functional divisions of the insect brain participate in flight control. It will support further studies to uncover the involved neurons inside specific brain areas and to test the hypothesized involvement of a visual learning and memory pathway in IMI flight control. PMID:25409523

Neuromechanism study of insect-machine interface: flight control by neural electrical stimulation.

PubMed

Zhao, Huixia; Zheng, Nenggan; Ribi, Willi A; Zheng, Huoqing; Xue, Lei; Gong, Fan; Zheng, Xiaoxiang; Hu, Fuliang

2014-01-01

The insect-machine interface (IMI) is a novel approach developed for man-made air vehicles, which directly controls insect flight by either neuromuscular or neural stimulation. In our previous study of IMI, we induced flight initiation and cessation reproducibly in restrained honeybees (Apis mellifera L.) via electrical stimulation of the bilateral optic lobes. To explore the neuromechanism underlying IMI, we applied electrical stimulation to seven subregions of the honeybee brain with the aid of a new method for localizing brain regions. Results showed that the success rate for initiating honeybee flight decreased in the order: α-lobe (or β-lobe), ellipsoid body, lobula, medulla and antennal lobe. Based on a comparison with other neurobiological studies in honeybees, we propose that there is a cluster of descending neurons in the honeybee brain that transmits neural excitation from stimulated brain areas to the thoracic ganglia, leading to flight behavior. This neural circuit may involve the higher-order integration center, the primary visual processing center and the suboesophageal ganglion, which is also associated with a possible learning and memory pathway. By pharmacologically manipulating the electrically stimulated honeybee brain, we have shown that octopamine, rather than dopamine, serotonin and acetylcholine, plays a part in the circuit underlying electrically elicited honeybee flight. Our study presents a new brain stimulation protocol for the honeybee-machine interface and has solved one of the questions with regard to understanding which functional divisions of the insect brain participate in flight control. It will support further studies to uncover the involved neurons inside specific brain areas and to test the hypothesized involvement of a visual learning and memory pathway in IMI flight control.

Nanoscale characterization of the electrical properties of oxide electrodes at the organic semiconductor-oxide electrode interface in organic solar cells

NASA Astrophysics Data System (ADS)

MacDonald, Gordon Alex

This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide electrodes such as indium tin oxide (ITO) and transparent metal-oxide (MO) electron selective interlayers (ESLs), such as zinc oxide (ZnO), the ability of these materials to rapidly extract photogenerated charges from organic semiconductors (OSCs) used in organic photovoltaic (OPV) cells, and evaluating their impact on the power conversion efficiency (PCE) of OPV devices. In Chapter 1, we will introduce the fundamental principles, benefits, and the key innovations that have advanced this technology. In Chapter 2 of this dissertation, we demonstrate an innovative application of conductive probe atomic force microscopy (CAFM) to map the nanoscale electrical heterogeneity at the interface between ITO, and a well-studied OSC, copper phthalocyanine (CuPc).(MacDonald et al. (2012) ACS Nano, 6, p. 9623) In this work we collected arrays of current-voltage (J-V) curves, using a CAFM probe as the top contact of CuPc/ITO systems, to map the local J-V responses. By comparing J-V responses to known models for charge transport, we were able to determine if the local rate-limiting-step for charge transport is through the OSC (ohmic) or the CuPc/ITO interface (non-ohmic). Chapter 3 focus on the electrical property characterization of RF-magnetron sputtered ZnO (sp-ZnO) ESL films on ITO substrates. We have shown that the energetic alignment of ESLs and the OSC active materials plays a critical role in determining the PCE of OPV devices and UV light soaking sensitivity. We have used a combination of device testing, modeling, and impedance spectroscopy to characterize the effects that energetic alignment has on the charge carrier transport and distribution within the OPV device. In Chapter 4 we demonstrate that the local properties of sp-ZnO films varies as a function of the underlying ITO crystal face. We show that the local ITO crystal face determines the local nucleation and growth of the sp-ZnO films and, in turn, affects the nanoscale distribution of electrical and chemical properties. These studies have contributed to a detailed understanding of the role that electrical heterogeneity, insulating barriers and energetic alignment at MO/OSC interfaces play in OPV PCE.

Three-dimensional wave evolution on electrified falling films

NASA Astrophysics Data System (ADS)

Tomlin, Ruben; Papageorgiou, Demetrios; Pavliotis, Greg

2016-11-01

We consider the full three-dimensional model for a thin viscous liquid film completely wetting a flat infinite solid substrate at some non-zero angle to the horizontal, with an electric field normal to the substrate far from the flow. Thin film flows have applications in cooling processes. Many studies have shown that the presence of interfacial waves increases heat transfer by orders of magnitude due to film thinning and convection effects. A long-wave asymptotics procedure yields a Kuramoto-Sivashinsky equation with a non-local term to model the weakly nonlinear evolution of the interface dynamics for overlying film arrangements, with a restriction on the electric field strength. The non-local term is always linearly destabilising and produces growth rates proportional to the cube of the magnitude of the wavenumber vector. A sufficiently strong electric field is able promote non-trivial dynamics for subcritical Reynolds number flows where the flat interface is stable in the absence of an electric field. We present numerical simulations where we observe rich dynamical behavior with competing attractors, including "snaking" travelling waves and other fully three-dimensional wave formations. EPSRC studentship (RJT).

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Liu, L.; Lu, H. H.; Lai, P. T.; Tang, W. M.

2015-03-01

InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 × 1012 cm-2 eV-1 at midgap), smaller gate leakage current (9.5 × 10-5 A/cm2 at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.

Strong Nonvolatile Magnon-Driven Magnetoelectric Coupling in Single-Crystal Co /[PbMg1/3Nb2/3O3] 0.71[PbTiO3]0.29 Heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Cai; Shen, Lvkang; Liu, Ming; Gao, Cunxu; Jia, Chenglong; Jiang, Changjun

2018-01-01

The ability to manipulate the magnetism on interfacing ferromagnetic and ferroelectric materials via electric fields to achieve an emergent multiferroic response has enormous potential for nanoscale devices with novel functionalities. Herein, a strong electric-field control of the magnetism modulation is reported for a single-crystal Co (14 nm )/(001 )Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Co layer on a PMN-PT substrate. Electric-field-tuned ferromagnetic resonance exhibits a large resonance field shift, with a 120-Oe difference between that under positive and negative remanent polarizations, which demonstrates nonvolatile electric-field control of the magnetism. Further, considering the complexity of the twofold symmetry magnetic anisotropy, the linear change of the fourfold symmetry magnetic anisotropy, relating to the single-crystal cubic magnetocrystal anisotropy of the Co thin film, is resolved and quantified to exert a magnon-driven, strong direct magnetoelectric effect on the Co /PMN -PT interface. These results are promising for future multiferroic devices.

Systems and methods for providing power to a load based upon a control strategy

DOEpatents

Perisic, Milun; Kajouke, Lateef A; Ransom, Ray M

2013-12-24

Systems and methods are provided for an electrical system. The electrical system includes a load, an interface configured to receive a voltage from a voltage source, and a controller configured to receive the voltage from the voltage source through the interface and to provide a voltage and current to the load. Wherein, when the controller is in a constant voltage mode, the controller provides a constant voltage to the load, when the controller is in a constant current mode, the controller provides a constant current to the load, and when the controller is in a constant power mode, the controller provides a constant power to the load.

Reduction mechanism of surface oxide films and characterization of formations on pulse electric-current sintered Al Mg alloy powders

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Song, Minghui; Mitsuishi, Kazutaka; Furuya, Kazuo

2005-02-01

The microstructure of interfaces between powder particles in Al-Mg alloy specimens sintered by pulse electric-current sintering (PECS) process was characterized using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The crystalline precipitates with nano-size in the interface were observed in all of Al-Mg alloy specimens. The composition was determined to be MgAl 2O 4 or MgO, or both of them, which depended on Mg content in alloy powder and sintering temperature. The precipitates were suggested to contribute to reduction reaction of Mg with oxide films originally covered at powder particles surface.

Conversion of type of quantum well structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Conversion of Type of Quantum Well Structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Droplet actuator analyzer with cartridge

NASA Technical Reports Server (NTRS)

Sturmer, Ryan A. (Inventor); Paik, Philip Y. (Inventor); Srinivasan, Vijay (Inventor); Brafford, Keith R. (Inventor); West, Richard M. (Inventor); Smith, Gregory F. (Inventor); Pollack, Michael G. (Inventor); Pamula, Vamsee K. (Inventor)

2011-01-01

A droplet actuator with cartridge is provided. According to one embodiment, a sample analyzer is provided and includes an analyzer unit comprising electronic or optical receiving means, a cartridge comprising self-contained droplet handling capabilities, and a wherein the cartridge is coupled to the analyzer unit by a means which aligns electronic and/or optical outputs from the cartridge with electronic or optical receiving means on the analyzer unit. According to another embodiment, a sample analyzer is provided and includes a sample analyzer comprising a cartridge coupled thereto and a means of electrical interface and/or optical interface between the cartridge and the analyzer, whereby electrical signals and/or optical signals may be transmitted from the cartridge to the analyzer.

Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor

NASA Astrophysics Data System (ADS)

Hori, Masahiro; Tsuchiya, Toshiaki; Ono, Yukinori

2017-01-01

Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 103 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.

Conductive nanogel-interfaced neural microelectrode arrays with electrically controlled in-situ delivery of manganese ions enabling high-resolution MEMRI for synchronous neural tracing with deep brain stimulation.

PubMed

Huang, Wei-Chen; Lo, Yu-Chih; Chu, Chao-Yi; Lai, Hsin-Yi; Chen, You-Yin; Chen, San-Yuan

2017-04-01

Chronic brain stimulation has become a promising physical therapy with increased efficacy and efficiency in the treatment of neurodegenerative diseases. The application of deep brain electrical stimulation (DBS) combined with manganese-enhanced magnetic resonance imaging (MEMRI) provides an unbiased representation of the functional anatomy, which shows the communication between areas of the brain responding to the therapy. However, it is challenging for the current system to provide a real-time high-resolution image because the incorporated MnCl 2 solution through microinjection usually results in image blurring or toxicity due to the uncontrollable diffusion of Mn 2+ . In this study, we developed a new type of conductive nanogel-based neural interface composed of amphiphilic chitosan-modified poly(3,4 -ethylenedioxythiophene) (PMSDT) that can exhibit biomimic structural/mechanical properties and ionic/electrical conductivity comparable to that of Au. More importantly, the PMSDT enables metal-ligand bonding with Mn 2+ ions, so that the system can release Mn 2+ ions rather than MnCl 2 solution directly and precisely controlled by electrical stimulation (ES) to achieve real-time high-resolution MEMRI. With the integration of PMSDT nanogel-based coating in polyimide-based microelectrode arrays, the post-implantation DBS enables frequency-dependent MR imaging in vivo, as well as small focal imaging in response to channel site-specific stimulation on the implant. The MR imaging of the implanted brain treated with 5-min electrical stimulation showed a thalamocortical neuronal pathway after 36 h, confirming the effective activation of a downstream neuronal circuit following DBS. By eliminating the susceptibility to artifact and toxicity, this system, in combination with a MR-compatible implant and a bio-compliant neural interface, provides a harmless and synchronic functional anatomy for DBS. The study demonstrates a model of MEMRI-functionalized DBS based on functional neural interface engineering and controllable delivery technology, which can be utilized in more detailed exploration of the functional anatomy in the treatment of neurodegenerative diseases. Copyright © 2017 Elsevier Ltd. All rights reserved.

Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; Wang, Danna; Shinobu, Onoda; Ohshima, Takeshi

2018-04-01

Radiation-induced charge trapping and interface traps in n-channel ZnO thin film transistors are characterised as a function of total dose and irradiation bias following exposure to gamma-rays. Devices were irradiated up to ∼60 kGy(SiO?) and the electrical characteristic exhibits two distinct regimes. In the first regime, up to a total dose of 40 kGy(SiO?), the threshold voltage increases positively. However, in the second regime with irradiation greater than 40 kGy(SiO?), the threshold voltage moves in the opposite direction. This reversal of threshold voltage is attributed to the influence of the radiation-induced interface and oxide- charge, in which both have opposite polarity, on the electrical performance of the transistors. In the first regime, the generation of the oxide- charge is initially greater than the density of interface traps and caused a positive shift. In the second regime, when the total doses were greater than 40 kGy(SiO?), the radiation-induced interface traps are greater than the density of oxide- charge and caused the threshold voltage to switch direction. Further, the generated interface traps contributed to the degradation of the effective channel mobility, whereas the density of traps at the grain-boundaries did not increase significantly upon irradiation. Isothermal annealing of the devices at 363 K results in a reduction in the trap density and an improvement of the effective channel mobility to ∼90% of its pre-irradiation value.

Systems and methods for reducing transient voltage spikes in matrix converters

DOEpatents

Kajouke, Lateef A.; Perisic, Milun; Ransom, Ray M.

2013-06-11

Systems and methods are provided for delivering energy using an energy conversion module that includes one or more switching elements. An exemplary electrical system comprises a DC interface, an AC interface, an isolation module, a first conversion module between the DC interface and the isolation module, and a second conversion module between the AC interface and the isolation module. A control module is configured to operate the first conversion module to provide an injection current to the second conversion module to reduce a magnitude of a current through a switching element of the second conversion module before opening the switching element.

Earth Observatory Satellite system definition study. Report 6: Space shuttle interfaces/utilization

NASA Technical Reports Server (NTRS)

1974-01-01

An analysis was conducted to determine the compatibility of the Earth Observatory Satellite (EOS) with the space shuttle. The mechanical interfaces and provisions required for a launch or retrieval of the EOS by the space shuttle are summarized. The space shuttle flight support equipment required for the operation is defined. Diagrams of the space shuttle in various configurations are provised to show the mission capability with the EOS. The subjects considered are as follows: (1) structural and mechanical interfaces, (2) spacecraft retention and deployment, (3) spacecraft retrieval, (4) electrical interfaces, (5) payload shuttle operations, (6) shuttle mode cost analysis, (7) shuttle orbit trades, and (8) safety considerations.

Control of Terahertz Emission by Ultrafast Spin-Charge Current Conversion at Rashba Interfaces

NASA Astrophysics Data System (ADS)

Jungfleisch, Matthias B.; Zhang, Qi; Zhang, Wei; Pearson, John E.; Schaller, Richard D.; Wen, Haidan; Hoffmann, Axel

2018-05-01

We show that a femtosecond spin-current pulse can generate terahertz (THz) transients at Rashba interfaces between two nonmagnetic materials. Our results unambiguously demonstrate the importance of the interface in this conversion process that we interpret in terms of the inverse Rashba Edelstein effect, in contrast to the THz emission in the bulk conversion process via the inverse spin-Hall effect. Furthermore, we show that at Rashba interfaces the THz-field amplitude can be controlled by the helicity of the light. The optical generation of electric photocurrents by these interfacial effects in the femtosecond regime will open up new opportunities in ultrafast spintronics.

Control of Terahertz Emission by Ultrafast Spin-Charge Current Conversion at Rashba Interfaces.

PubMed

Jungfleisch, Matthias B; Zhang, Qi; Zhang, Wei; Pearson, John E; Schaller, Richard D; Wen, Haidan; Hoffmann, Axel

2018-05-18

We show that a femtosecond spin-current pulse can generate terahertz (THz) transients at Rashba interfaces between two nonmagnetic materials. Our results unambiguously demonstrate the importance of the interface in this conversion process that we interpret in terms of the inverse Rashba Edelstein effect, in contrast to the THz emission in the bulk conversion process via the inverse spin-Hall effect. Furthermore, we show that at Rashba interfaces the THz-field amplitude can be controlled by the helicity of the light. The optical generation of electric photocurrents by these interfacial effects in the femtosecond regime will open up new opportunities in ultrafast spintronics.

Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures

NASA Astrophysics Data System (ADS)

Sakamoto, Hironori; Takeuchi, Eito; Yoshida, Kouki; Morita, Ken; Ma, Bei; Ishitani, Yoshihiro

2018-01-01

Interface phonon polaritons (IPhPs) in nano-structures excluding metal components are thoroughly investigated because they have lower loss in optical emission or absorption and higher quality factors than surface plasmon polaritons. In previous reports, it is found that strong infrared (IR) absorption is based on the interaction of p-polarized light and materials, and the resonance photon energy highly depends on the structure size and angle of incidence. We report the optical absorption by metal/semiconductor (bulk-GaAs and thin film-AlN)-stripe structures in THz to mid-IR region for the electric field of light perpendicular to the stripes, where both of s- and p-polarized light are absorbed. The absorption resonates with longitudinal optical (LO) phonon or LO phonon-plasmon coupling (LOPC) modes, and thus is independent of the angle of incidence or structure size. This absorption is attributed to the electric dipoles by the optically induced polarization charges at the metal/semiconductor, heterointerfaces, or interfaces of high electron density layers and depression ones. The electric permittivity is modified by the formation of these dipoles. It is found to be indispensable to utilize our form of altered permittivity to explain the experimental dispersion relations of metal/semiconductor-IPhP and SPhP in these samples. This analysis reveals that the IPhPs in the stripe structures of metal/AlN-film on a SiC substrate are highly confined in the AlN film, while the permittivity of the structures of metal/bulk-GaAs is partially affected by the electric-dipoles. The quality factors of the electric-dipole absorption are found to be 42-54 for undoped samples, and the value of 62 is obtained for Al/AlN-IPhP. It is thought that metal-contained structures are not obstacles to mode energy selectivity in phonon energy region of semiconductors.

Graphene-Based Interfaces Do Not Alter Target Nerve Cells.

PubMed

Fabbro, Alessandra; Scaini, Denis; León, Verónica; Vázquez, Ester; Cellot, Giada; Privitera, Giulia; Lombardi, Lucia; Torrisi, Felice; Tomarchio, Flavia; Bonaccorso, Francesco; Bosi, Susanna; Ferrari, Andrea C; Ballerini, Laura; Prato, Maurizio

2016-01-26

Neural-interfaces rely on the ability of electrodes to transduce stimuli into electrical patterns delivered to the brain. In addition to sensitivity to the stimuli, stability in the operating conditions and efficient charge transfer to neurons, the electrodes should not alter the physiological properties of the target tissue. Graphene is emerging as a promising material for neuro-interfacing applications, given its outstanding physico-chemical properties. Here, we use graphene-based substrates (GBSs) to interface neuronal growth. We test our GBSs on brain cell cultures by measuring functional and synaptic integrity of the emerging neuronal networks. We show that GBSs are permissive interfaces, even when uncoated by cell adhesion layers, retaining unaltered neuronal signaling properties, thus being suitable for carbon-based neural prosthetic devices.

Advanced EVA system design requirements study: EVAS/space station system interface requirements

NASA Technical Reports Server (NTRS)

Woods, T. G.

1985-01-01

The definition of the Extravehicular Activity (EVA) systems interface requirements and accomodations for effective integration of a production EVA capability into the space station are contained. A description of the EVA systems for which the space station must provide the various interfaces and accomodations are provided. The discussion and analyses of the various space station areas in which the EVA interfaces are required and/or from which implications for EVA system design requirements are derived, are included. The rationale is provided for all EVAS mechanical, fluid, electrical, communications, and data system interfaces as well as exterior and interior requirements necessary to facilitate EVA operations. Results of the studies supporting these discussions are presented in the appendix.

Electrocapillary Phenomena at Edible Oil/Saline Interfaces.

PubMed

Nishimura, Satoshi; Ohzono, Takuya; Shoji, Kohei; Yagihara, Shin; Hayashi, Masafumi; Tanaka, Hisao

2017-03-01

Interfacial tension between edible oil and saline was measured under applied electric fields to understand the electrocapillary phenomena at the edible oil/saline interfaces. The electric responses of saline droplets in edible oil were also observed microscopically to examine the relationship between the electrocapillary phenomena and interfacial polarization. When sodium oleate (SO) was added to edible oil (SO-oil), the interfacial tension between SO-oil and saline decreased. However, no decrease was observed for additive-free oil or oleic acid (OA)-added oil (OA-oil). Microscopic observations suggested that the magnitude of interfacial polarization increased in the order of additive-free oil < OA-oil < SO-oil. The difference in electrocapillary phenomena between OA- and SO-oils was closely related to the polarization magnitude. In the case of SO-oil, the decrease in interfacial tension was remarkably larger for saline (pH 5.4~5.6) than that for phosphate-buffered saline (PBS, pH 7.2~7.4). However, no difference was observed between the electric responses of PBS and saline droplets in SO-oil. The difference in electrocapillary phenomena for PBS and saline could not be simply explained in terms of polarization magnitude. The ratio of ionized and non-ionized OA at the interfaces changed with the saline pH, possibly leading to the above difference.

The use of hydrogel as an electrode-skin interface for electrode array FES applications.

PubMed

Cooper, Glen; Barker, Anthony T; Heller, Ben W; Good, Tim; Kenney, Laurence P J; Howard, David

2011-10-01

Functional electrical stimulation is commonly used to restore function in post-stroke patients in upper and lower limb applications. Location of the electrodes can be a problem hence some research groups have begun to experiment with electrode arrays. Electrode arrays are interfaced with a thin continuous hydrogel sheet which is high resistivity to reduce transverse currents between electrodes in the array. Research using electrode arrays has all been conducted in a laboratory environment over short time periods but it is suspected that this approach will not be feasible over longer time periods due to changes in hydrogel resistivity. High resistivity hydrogel samples were tested by leaving them in contact with the skin over a seven day period. The samples became extremely conductive with resistivities reaching around 10-50 Ωm. The effect of these resistivity changes was studied using finite element analysis to solve for the stationary current quasi-static electric field gradient in the tissue. Electrical stimulation efficiency and focality were calculated for both a high and low resistivity electrode-skin interface layer at different tissue depths. The results showed that low resistivity hydrogel produced significant decreases in stimulation efficiency and focality compared to high resistivity hydrogel. Copyright © 2011 IPEM. Published by Elsevier Ltd. All rights reserved.

Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient.

PubMed

Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

2018-06-19

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nanospintronic devices with quasi-one-dimensional semiconductor channels.

In situ monitoring magnetism and resistance of nanophase platinum upon electrochemical oxidation.

PubMed

Steyskal, Eva-Maria; Topolovec, Stefan; Landgraf, Stephan; Krenn, Heinz; Würschum, Roland

2013-01-01

Controlled tuning of material properties by external stimuli represents one of the major topics of current research in the field of functional materials. Electrochemically induced property tuning has recently emerged as a promising pathway in this direction making use of nanophase materials with a high fraction of electrode-electrolyte interfaces. The present letter reports on electrochemical property tuning of porous nanocrystalline Pt. Deeper insight into the underlying processes could be gained by means of a direct comparison of the charge-induced response of two different properties, namely electrical resistance and magnetic moment. For this purpose, four-point resistance measurements and SQUID magnetometry were performed under identical in situ electrochemical control focussing on the regime of electrooxidation. Fully reversible variations of the electrical resistance and the magnetic moment of 6% and 1% were observed upon the formation or dissolution of a subatomic chemisorbed oxygen surface layer, respectively. The increase of the resistance, which is directly correlated to the amount of deposited oxygen, is considered to be primarily caused by charge-carrier scattering processes at the metal-electrolyte interfaces. In comparison, the decrease of the magnetic moment upon positive charging appears to be governed by the electric field at the nanocrystallite-electrolyte interfaces due to spin-orbit coupling.

Breaking the electrical barrier between copper and carbon nanotubes.

PubMed

Milowska, Karolina Z; Ghorbani-Asl, Mahdi; Burda, Marek; Wolanicka, Lidia; Ćatić, Nordin; Bristowe, Paul D; Koziol, Krzysztof K K

2017-06-22

Improving the interface between copper and carbon nanotubes (CNTs) offers a straightforward strategy for the effective manufacturing and utilisation of Cu-CNT composite material that could be used in various industries including microelectronics, aerospace and transportation. Motivated by a combination of structural and electrical measurements on Cu-M-CNT bimetal systems (M = Ni, Cr) we show, using first principles calculations, that the conductance of this composite can exceed that of a pure Cu-CNT system and that the current density can even reach 10 11 A cm -2 . The results show that the proper choice of alloying element (M) and type of contact facilitate the fabrication of ultra-conductive Cu-M-CNT systems by creating a favourable interface geometry, increasing the interface electronic density of states and reducing the contact resistance. In particular, a small concentration of Ni between the Cu matrix and the CNT using either an "end contact" and or a "dot contact" can significantly improve the electrical performance of the composite. Furthermore the predicted conductance of Ni-doped Cu-CNT "carpets" exceeds that of an undoped system by ∼200%. Cr is shown to improve CNT integration and composite conductance over a wide temperature range while Al, at low voltages, can enhance the conductance beyond that of Cr.

Electricity Data Browser

EIA Publications

The Electricity Data Browser shows generation, consumption, fossil fuel receipts, stockpiles, retail sales, and electricity prices. The data appear on an interactive web page and are updated each month. The Electricity Data Browser includes all the datasets collected and published in EIA's Electric Power Monthly and allows users to perform dynamic charting of data sets as well as map the data by state. The data browser includes a series of reports that appear in the Electric Power Monthly and allows readers to drill down to plant level statistics, where available. All images and datasets are available for download. Users can also link to the data series in EIA's Application Programming Interface (API). An API makes our data machine-readable and more accessible to users.

Electrical Prototype Power Processor for the 30-cm Mercury electric propulsion engine

NASA Technical Reports Server (NTRS)

Biess, J. J.; Frye, R. J.

1978-01-01

An Electrical Prototpye Power Processor has been designed to the latest electrical and performance requirements for a flight-type 30-cm ion engine and includes all the necessary power, command, telemetry and control interfaces for a typical electric propulsion subsystem. The power processor was configured into seven separate mechanical modules that would allow subassembly fabrication, test and integration into a complete power processor unit assembly. The conceptual mechanical packaging of the electrical prototype power processor unit demonstrated the relative location of power, high voltage and control electronic components to minimize electrical interactions and to provide adequate thermal control in a vacuum environment. Thermal control was accomplished with a heat pipe simulator attached to the base of the modules.

Applying reliability analysis to design electric power systems for More-electric aircraft

NASA Astrophysics Data System (ADS)

Zhang, Baozhu

The More-Electric Aircraft (MEA) is a type of aircraft that replaces conventional hydraulic and pneumatic systems with electrically powered components. These changes have significantly challenged the aircraft electric power system design. This thesis investigates how reliability analysis can be applied to automatically generate system topologies for the MEA electric power system. We first use a traditional method of reliability block diagrams to analyze the reliability level on different system topologies. We next propose a new methodology in which system topologies, constrained by a set reliability level, are automatically generated. The path-set method is used for analysis. Finally, we interface these sets of system topologies with control synthesis tools to automatically create correct-by-construction control logic for the electric power system.

Optical Neural Interfaces

PubMed Central

Warden, Melissa R.; Cardin, Jessica A.; Deisseroth, Karl

2014-01-01

Genetically encoded optical actuators and indicators have changed the landscape of neuroscience, enabling targetable control and readout of specific components of intact neural circuits in behaving animals. Here, we review the development of optical neural interfaces, focusing on hardware designed for optical control of neural activity, integrated optical control and electrical readout, and optical readout of population and single-cell neural activity in freely moving mammals. PMID:25014785

Combined electrophoresis-electrospray interface and method

DOEpatents

Smith, Richard D.; Udseth, Harold R.; Barinaga, Charles J.

1995-01-01

An improvement to the system and method for analyzing molecular constituents of a composition sample that comprises improvements to an electrospray ionization source for interfacing to mass spectrometers and other detection devices. The improvement consists of establishing a unique electrical circuit pattern and nozzle configuration, a metallic coated and conical shaped capillary outlet, coupled with sizing of the capillary to obtain maximum sensitivity.

Construction of three-dimensional graphene interfaces into carbon fiber textiles for increasing deposition of nickel nanoparticles: flexible hierarchical magnetic textile composites for strong electromagnetic shielding

NASA Astrophysics Data System (ADS)

Bian, Xing-Ming; Liu, Lin; Li, Hai-Bing; Wang, Chan-Yuan; Xie, Qing; Zhao, Quan-Liang; Bi, Song; Hou, Zhi-Ling

2017-01-01

Since manipulating electromagnetic waves with electromagnetic active materials for environmental and electric engineering is a significant task, here a novel prototype is reported by introducing reduced graphene oxide (RGO) interfaces in carbon fiber (CF) networks for a hierarchical carbon fiber/reduced graphene oxide/nickel (CF-RGO-Ni) composite textile. Upon charaterizations of the microscopic morphologies, electrical and magnetic properties, the presence of three-dimensional RGO interfaces and bifunctional nickel nanoparticles substantially influences the related physical properties in the resulting hierarchical composite textiles. Eletromagnetic interference (EMI) shielding performance suggests that the hierarchical composite textiles hold a strong shielding effectiveness greater than 61 dB, showing greater advantages than conventional polymeric and foamy shielding composites. As a polymer-free lightweight structure, flexible CF-RGO-Ni composites of all electromagnetic active components offer unique understanding of the multi-scale and multiple mechanisms in electromagnetic energy consumption. Such a novel prototype of shielding structures along with convenient technology highlight a strategy to achieve high-performance EMI shielding, coupled with a universal approach for preparing advanced lightweight composites with graphene interfaces.

Construction of three-dimensional graphene interfaces into carbon fiber textiles for increasing deposition of nickel nanoparticles: flexible hierarchical magnetic textile composites for strong electromagnetic shielding.

PubMed

Bian, Xing-Ming; Liu, Lin; Li, Hai-Bing; Wang, Chan-Yuan; Xie, Qing; Zhao, Quan-Liang; Bi, Song; Hou, Zhi-Ling

2017-01-27

Since manipulating electromagnetic waves with electromagnetic active materials for environmental and electric engineering is a significant task, here a novel prototype is reported by introducing reduced graphene oxide (RGO) interfaces in carbon fiber (CF) networks for a hierarchical carbon fiber/reduced graphene oxide/nickel (CF-RGO-Ni) composite textile. Upon charaterizations of the microscopic morphologies, electrical and magnetic properties, the presence of three-dimensional RGO interfaces and bifunctional nickel nanoparticles substantially influences the related physical properties in the resulting hierarchical composite textiles. Eletromagnetic interference (EMI) shielding performance suggests that the hierarchical composite textiles hold a strong shielding effectiveness greater than 61 dB, showing greater advantages than conventional polymeric and foamy shielding composites. As a polymer-free lightweight structure, flexible CF-RGO-Ni composites of all electromagnetic active components offer unique understanding of the multi-scale and multiple mechanisms in electromagnetic energy consumption. Such a novel prototype of shielding structures along with convenient technology highlight a strategy to achieve high-performance EMI shielding, coupled with a universal approach for preparing advanced lightweight composites with graphene interfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurementsmore » indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.« less

ICF Implosions, Space-Charge Electric Fields, and Their Impact on Mix and Compression

NASA Astrophysics Data System (ADS)

Knoll, Dana; Chacon, Luis; Simakov, Andrei

2013-10-01

The single-fluid, quasi-neutral, radiation hydrodynamics codes, used to design the NIF targets, predict thermonuclear ignition for the conditions that have been achieved experimentally. A logical conclusion is that the physics model used in these codes is missing one, or more, key phenomena. Two key model-experiment inconsistencies on NIF are: 1) a lower implosion velocity than predicted by the design codes, and 2) transport of pusher material deep into the hot spot. We hypothesize that both of these model-experiment inconsistencies may be a result of a large, space-charge, electric field residing on the distinct interfaces in a NIF target. Large space-charge fields have been experimentally observed in Omega experiments. Given our hypothesis, this presentation will: 1) Develop a more complete physics picture of initiation, sustainment, and dissipation of a current-driven plasma sheath / double-layer at the Fuel-Pusher interface of an ablating plastic shell implosion on Omega, 2) Characterize the mix that can result from a double-layer field at the Fuel-Pusher interface, prior to the onset of fluid instabilities, and 3) Quantify the impact of the double-layer induced surface tension at the Fuel-Pusher interface on the peak observed implosion velocity in Omega.

Analysis of the electrical harmonic characteristics of a slip recovery variable speed generating system for wind turbine applications

NASA Astrophysics Data System (ADS)

Herrera, J. I.; Reddoch, T. W.

1988-02-01

Variable speed electric generating technology can enhance the general use of wind energy in electric utility applications. This enhancement results from two characteristic properties of variable speed wind turbine generators: an improvement in drive train damping characteristics, which results in reduced structural loading on the entire wind turbine system, and an improvement in the overall efficiency by using a more sophisticated electrical generator. Electronic converter systems are the focus of this investigation -- in particular, the properties of a wound-rotor induction generator with the slip recovery system and direct-current link converter. Experience with solid-state converter systems in large wind turbines is extremely limited. This report presents measurements of electrical performances of the slip recovery system and is limited to the terminal characteristics of the system. Variable speed generating systems working effectively in utility applications will require a satisfactory interface between the turbine/generator pair and the utility network. The electrical testing described herein focuses largely on the interface characteristics of the generating system. A MOD-O wind turbine was connected to a very strong system; thus, the voltage distortion was low and the total harmonic distortion in the utility voltage was less than 3 percent (within the 5 percent limit required by most utilities). The largest voltage component of a frequency below 60 Hz was 40 dB down from the 60-Hz less than component.

Breakdown between bare electrodes with an oil-paper interface

NASA Astrophysics Data System (ADS)

Kelley, E. F.; Hebner, R. E., Jr.

1980-06-01

Measurements of the location of electrical breakdown in a composite insulating system were made. For these measurements a paper sample was mounted so that it connected the two electrodes. Electrode structures ranging from plane-plane to sphere-sphere were used. The electrode paper system was tested in oil in an attempt to determine the properties of an oil paper interface. The data indicated that in a carefully prepared system the breakdown will not necessarily occur at the interface. In addition, it was found that the breakdown voltages were not significantly lower for those breakdowns which occurred at the interface than for those which did not. It was noted that if the paper interface was not dried or if many gaseous voids were left in or on the paper, the breakdown will regularly occur at the interface and at a lower voltage.

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

Covalent bonding of YIGSR and RGD to PEDOT/PSS/MWCNT-COOH composite material to improve the neural interface.

PubMed

Wang, Kun; Tang, Rong-Yu; Zhao, Xiao-Bo; Li, Jun-Jie; Lang, Yi-Ran; Jiang, Xiao-Xia; Sun, Hong-Ji; Lin, Qiu-Xia; Wang, Chang-Yong

2015-11-28

The development of coating materials for neural interfaces has been a pursued to improve the electrical, mechanical and biological performances. For these goals, a bioactive coating was developed in this work featuring a poly(3,4-ethylenedioxythiophene) (PEDOT)/carbon nanotube (CNT) composite and covalently bonded YIGSR and RGD. Its biological effect and electrical characteristics were assessed in vivo on microwire arrays (MWA). The coated electrodes exhibited a significantly higher charge storage capacity (CSC) and lower electrochemical impedance at 1 kHz which are desired to improve the stimulating and recording performances, respectively. Acute neural recording experiments revealed that coated MWA possess a higher signal/noise ratio capturing spikes undetected by uncoated electrodes. Moreover, coated MWA possessed more active sites and single units, and the noise floor of coated electrodes was lower than that of uncoated electrodes. There is little information in the literature concerning the chronic performance of bioactively modified neural interfaces in vivo. Therefore in this work, chronic in vivo tests were conducted and the PEDOT/PSS/MWCNT-polypeptide coated arrays exhibited excellent performances with the highest mean maximal amplitude from day 4 to day 12 during which the acute response severely compromised the performance of the electrodes. In brief, we developed a simple method of covalently bonding YIGSR and RGD to a PEDOT/PSS/MWCNT-COOH composite improving both the biocompatibility and electrical performance of the neural interface. Our findings suggest that YIGSR and RGD modified PEDOT/PSS/MWCNT is a promising bioactivated composite coating for neural recording and stimulating.

Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage.

PubMed

Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

2017-02-28

We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO 2 -graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO 2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

NASA Astrophysics Data System (ADS)

Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

2018-03-01

In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

Retention of Electronic Conductivity in LaAlO3/SrTiO3 Nanostructures Using a SrCuO2 Capping Layer

NASA Astrophysics Data System (ADS)

Aurino, P. P.; Kalabukhov, A.; Borgani, R.; Haviland, D. B.; Bauch, T.; Lombardi, F.; Claeson, T.; Winkler, D.

2016-08-01

The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique playground to study the interplay and competitions between different ordering phenomena in a strongly correlated two-dimensional electron gas. Recent studies of the LAO/STO interface reveal the inhomogeneous nature of the 2DEG that strongly influences electrical-transport properties. Nanowires needed in future applications may be adversely affected, and our aim is, thus, to produce a more homogeneous electron gas. In this work, we demonstrate that nanostructures fabricated in the quasi-2DEG at the LaAlO3/SrTiO3 interface, capped with a SrCuO2 layer, retain their electrical resistivity and mobility independent of the structure size, ranging from 100 nm to 30 μ m . This is in contrast to noncapped LAO/STO structures, where the room-temperature electrical resistivity significantly increases when the structure size becomes smaller than 1 μ m . High-resolution intermodulation electrostatic force microscopy reveals an inhomogeneous surface potential with "puddles" of a characteristic size of 130 nm in the noncapped samples and a more uniform surface potential with a larger characteristic size of the puddles in the capped samples. In addition, capped structures show superconductivity below 200 mK and nonlinear current-voltage characteristics with a clear critical current observed up to 700 mK. Our findings shed light on the complicated nature of the 2DEG at the LAO/STO interface and may also be used for the design of electronic devices.

Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

NASA Astrophysics Data System (ADS)

Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

2017-01-01

Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.

Generation of complex motor patterns in american grasshopper via current-controlled thoracic electrical interfacing.

PubMed

Giampalmo, Susan L; Absher, Benjamin F; Bourne, W Tucker; Steves, Lida E; Vodenski, Vassil V; O'Donnell, Peter M; Erickson, Jonathan C

2011-01-01

Micro-air vehicles (MAVs) have attracted attention for their potential application to military applications, environmental sensing, and search and rescue missions. While progress is being made toward fabrication of a completely human-engineered MAV, another promising approach seeks to interface to, and take control of, an insect's nervous system. Cyborg insects take advantage of their innate exquisite loco-motor, navigation, and sensing abilities. Recently, several groups have demonstrated the feasibility of radio-controlled flight in the hawkmoth and beetle via electrical neural interfaces. Here, we report a method for eliciting the "jump" response in the American grasshopper (S. Americana). We found that stimulating the metathoracic T3 ganglion with constant-current square wave pulses with amplitude 186 ± 40 μA and frequency 190 ± 13 Hz reproducibly evoked (≥95% success rate) the desired motor activity in N=3 test subjects. To the best of our knowledge, this is the first report of an insect cyborg with a synchronous neuromuscular system.

Direct bonding of gallium nitride to silicon carbide: Physical, and electrical characterization

NASA Astrophysics Data System (ADS)

Lee, Jaeseob

The direct bonding method is applied to the GaN/SiC system, and the processing conditions for successful direct bonding are clarified. Direct bonding of GaN/SiC is achieved at 900°C. The direct bonding of GaN to Si-face SiC is very dependent on the choice of chemical treatments, but the bonding of GaN to C-face SiC is less dependent on surface preparation. If a native oxide is present when the bonded interface is prepared, the current through the interface is decreased, which is attributed to an energy barrier due to the presence of charged interface states. TEM images indicate 10nm spaced dislocations at the interface for the GaN/SiC (Si-face), and ˜6nm for the GaN/SiC (C-face), which form to accommodate the lattice mismatch (3.4%) and twist (1˜2°) and tilt misfit (0.2° for Si-face SiC and 3° for C-face SiC). In some regions (˜30%) an amorphous oxide layer forms at the interface, which is attributed to inadequate surface preparation prior to bonding. The strain of the GaN film with a Ga/C interface was ˜0.1%, tensile strain, and that of GaN with a Ga/Si interface was ˜0.2%, tensile strain. Our analysis indicates that the GaN/SiC thermal misfit dominates the strain of the GaN after bonding. The electrical characteristics of n-p GaN/SiC heterojunctions display diode ideality factors, saturation currents, energy barrier heights, and band offsets of 1.5 +/- 0.1, 10-13 A/cm 2, 0.75 +/- 0.10 eV, and DeltaEC = 0.87 +/- 0.10 eV for the Ga/Si interface and 1.2 +/- 0.1, 10 -16 A/cm2, 0.56 +/- 0.10 eV, and Delta EC = 0.46 +/- 0.10 eV for the Ga/C interface.

Atmosphere explorer missions C, D, and E. Spacecraft experiment interface definition study

NASA Technical Reports Server (NTRS)

1972-01-01

The Atmosphere Explorer Missions C, D, & E Spacecraft/Experiment Interface Definition Study is discussed. The objectives of the study included an analysis of the accommodation requirements of the experiments for the three missions, an assessment of the overall effect of these requirements on the spacecraft system design and performance, and the detailed definition of all experiment/spacecraft electrical, mechanical, and environmental interfaces. In addition, the study included the identification and definition of system characteristics required to ensure compatibility with the consolidated STADAN and MSFN communications networks.

Device Control Using Gestures Sensed from EMG

NASA Technical Reports Server (NTRS)

Wheeler, Kevin R.

2003-01-01

In this paper we present neuro-electric interfaces for virtual device control. The examples presented rely upon sampling Electromyogram data from a participants forearm. This data is then fed into pattern recognition software that has been trained to distinguish gestures from a given gesture set. The pattern recognition software consists of hidden Markov models which are used to recognize the gestures as they are being performed in real-time. Two experiments were conducted to examine the feasibility of this interface technology. The first replicated a virtual joystick interface, and the second replicated a keyboard.

Vibrational Stark Effect to Probe the Electric-Double Layer of the Ionic Liquid-Metal Electrodes

NASA Astrophysics Data System (ADS)

Garcia Rey, Natalia; Moore, Alexander Knight; Toyouchi, Shuichi; Dlott, Dana

2017-06-01

Vibrational sum frequency generation (VSFG) spectroscopy is used to study the effect of room temperature ionic liquids (RTILs) in situ at the electrical double layer (EDL). RTILs have been recognized as electrolytes without solvent for applications in batteries, supercapacitors and electrodeposition^{1}. The molecular response of the RTIL in the EDL affects the performance of these devices. We use the vibrational Stark effect on CO as a probe to detect the changes in the electric field affected by the RTIL across the EDL on metal electrodes. The Stark effect is a shift in the frequency in response to an externally applied electric field and also influenced by the surrounding electrolyte and electrode^{2}. The CO Stark shift is monitored by the CO-VSFG spectra on Pt or Ag in a range of different imidazolium-based RTILs electrolytes, where their composition is tuned by exchanging the anion, the cation or the imidazolium functional group. We study the free induction decay (FID)^{3} of the CO to monitor how the RTIL structure and composition affect the vibrational relaxation of the CO. Combining the CO vibrational Stark effect and the FID allow us to understand how the RTIL electrochemical response, molecular orientation response and collective relaxation affect the potential drop of the electric field across the EDL, and, in turn, how determines the electrical capacitance or reactivity of the electrolyte/electrode interface. ^{1}Fedorov, M. V.; Kornyshev, A. A., Ionic Liquids at Electrified Interfaces. Chem. Rev. 2014, 114, 2978-3036. ^{2} (a) Lambert, D. K., Vibrational Stark Effect of Adsorbates at Electrochemical Interfaces. Electrochim. Acta 1996, 41, 623-630. (b) Oklejas, V.; Sjostrom, C.; Harris, J. M., SERS Detection of the Vibrational Stark Effect from Nitrile-Terminated SAMs to Probe Electric Fields in the Diffuse Double-Layer. J. Am. Chem. Soc. 2002, 124, 2408-2409. ^{3}Symonds, J. P. R.; Arnolds, H.; Zhang, V. L.; Fukutani, K.; King, D. A.,Broadband Femtosecond Sum-Frequency Spectroscopy of CO on Ru{1010} in the Frequency and Time Domains. J. Chem. Phys. 2004, 120, 7158-7164.

Insect-machine interface based neurocybernetics.

PubMed

Bozkurt, Alper; Gilmour, Robert F; Sinha, Ayesa; Stern, David; Lal, Amit

2009-06-01

We present details of a novel bioelectric interface formed by placing microfabricated probes into insect during metamorphic growth cycles. The inserted microprobes emerge with the insect where the development of tissue around the electronics during the pupal development allows mechanically stable and electrically reliable structures coupled to the insect. Remarkably, the insects do not react adversely or otherwise to the inserted electronics in the pupae stage, as is true when the electrodes are inserted in adult stages. We report on the electrical and mechanical characteristics of this novel bioelectronic interface, which we believe would be adopted by many investigators trying to investigate biological behavior in insects with negligible or minimal traumatic effect encountered when probes are inserted in adult stages. This novel insect-machine interface also allows for hybrid insect-machine platforms for further studies. As an application, we demonstrate our first results toward navigation of flight in moths. When instrumented with equipment to gather information for environmental sensing, such insects potentially can assist man to monitor the ecosystems that we share with them for sustainability. The simplicity of the optimized surgical procedure we invented allows for batch insertions to the insect for automatic and mass production of such hybrid insect-machine platforms. Therefore, our bioelectronic interface and hybrid insect-machine platform enables multidisciplinary scientific and engineering studies not only to investigate the details of insect behavioral physiology but also to control it.

Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device.

PubMed

Chang, Shu-Jui; Chang, Po-Chun; Lin, Wen-Chin; Lo, Shao-Hua; Chang, Liang-Chun; Lee, Shang-Fan; Tseng, Yuan-Chieh

2017-03-23

Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.

Weak stability of the plasma-vacuum interface problem

NASA Astrophysics Data System (ADS)

Catania, Davide; D'Abbicco, Marcello; Secchi, Paolo

2016-09-01

We consider the free boundary problem for the two-dimensional plasma-vacuum interface in ideal compressible magnetohydrodynamics (MHD). In the plasma region, the flow is governed by the usual compressible MHD equations, while in the vacuum region we consider the Maxwell system for the electric and the magnetic fields. At the free interface, driven by the plasma velocity, the total pressure is continuous and the magnetic field on both sides is tangent to the boundary. We study the linear stability of rectilinear plasma-vacuum interfaces by computing the Kreiss-Lopatinskiĭ determinant of an associated linearized boundary value problem. Apart from possible resonances, we obtain that the piecewise constant plasma-vacuum interfaces are always weakly linearly stable, independently of the size of tangential velocity, magnetic and electric fields on both sides of the characteristic discontinuity. We also prove that solutions to the linearized problem obey an energy estimate with a loss of regularity with respect to the source terms, both in the interior domain and on the boundary, due to the failure of the uniform Kreiss-Lopatinskiĭ condition, as the Kreiss-Lopatinskiĭ determinant associated with this linearized boundary value problem has roots on the boundary of the frequency space. In the proof of the a priori estimates, a crucial part is played by the construction of symmetrizers for a reduced differential system, which has poles at which the Kreiss-Lopatinskiĭ condition may fail simultaneously.

Combined use of frequency‐domain electromagnetic and electrical resistivity surveys to delineate the freshwater/saltwater interface near saline lakes in the Nebraska Sand Hills, Nebraska, USA

USGS Publications Warehouse

Ong, John T.; White, Eric A.; Lane, John W.; Halihan, Todd; Zlotnik, Vitaly A; Butler, Dwain K.

2009-01-01

We investigate the use of frequency‐domain electromagnetic (FDEM) and electrical resistivity (ER) surveys for rapid and detailed characterization of the direction of lake‐aquifer fluxes and the configuration of salt plumes generated from saline lakes. This methodology was developed and applied at several lakes in the Nebraska Sand Hills, Nebraska, in an area with both freshwater and saline lakes hydraulically connected to the freshwater surficial aquifer. The FDEM survey was conducted by mounting the instrument on a fiberglass cart towed by an all‐terrain vehicle. The towed FDEM surveys covered about 25 km per day and served as a reconnaissance method for choosing locations for the more quantitative and detailed ER surveys. Around the saline lakes, areas with high electrical conductivity are consistent with the regional direction of ground‐water flow. Lower electrical conductivity was measured around the freshwater lakes with anomalies correlating to a paleovalley axis inferred from previous studies. The efficacy of this geophysical approach is attributed to: (1) significant contrast in electrical conductivity between freshwater and saltwater, (2) near‐surface location of the freshwater/saltwater interface, (3) minimal cultural interference, and (4) relative homogeneity of the aquifer materials.

Stretchable conducting materials with multi-scale hierarchical structures for biomedical applications

NASA Astrophysics Data System (ADS)

Kim, Hyun; Shim, Bong Sup

2014-08-01

Electrogenetic tissues in human body such as central and peripheral nerve systems, muscular and cardiomuscular systems are soft and stretchable materials. However, most of the artificial materials, interfacing with those conductive tissues, such as neural electrodes and cardiac pacemakers, have stiff mechanical properties. The rather contradictory properties between natural and artificial materials usually cause critical incompatibility problems in implanting bodymachine interfaces for wide ranges of biomedical devices. Thus, we developed a stretchable and electrically conductive material with complex hierarchical structures; multi-scale microstructures and nanostructural electrical pathways. For biomedical purposes, an implantable polycaprolactone (PCL) membrane was coated by molecularly controlled layer-bylayer (LBL) assembly of single-walled carbon nanotubes (SWNTs) or poly(3,4-ethylenedioxythiophene) (PEDOT). The soft PCL membrane with asymmetric micro- and nano-pores provides elastic properties, while conductive SWNT or PEDOT coating preserves stable electrical conductivity even in a fully stretched state. This electrical conductivity enhanced ionic cell transmission and cell-to-cell interactions as well as electrical cellular stimulation on the membrane. Our novel stretchable conducting materials will overcome long-lasting challenges for bioelectronic applications by significantly reducing mechanical property gaps between tissues and artificial materials and by providing 3D interconnected electro-active pathways which can be available even at a fully stretched state.

Absolute and convective instabilities of a film flow down a vertical fiber subjected to a radial electric field

NASA Astrophysics Data System (ADS)

Liu, Rong; Chen, Xue; Ding, Zijing

2018-01-01

We consider the motion of a gravity-driven flow down a vertical fiber subjected to a radial electric field. This flow exhibits rich dynamics including the formation of droplets, or beads, driven by a Rayleigh-Plateau mechanism modified by the presence of gravity as well as the Maxwell stress at the interface. A spatiotemporal stability analysis is performed to investigate the effect of electric field on the absolute-convective instability (AI-CI) characteristics. We performed a numerical simulation on the nonlinear evolution of the film to examine the transition from CI to AI regime. The numerical results are in excellent agreement with the spatiotemporal stability analysis. The blowup behavior of nonlinear simulation predicts the formation of touchdown singularity of the interface due to the effect of electric field. We try to connect the blowup behavior with the AI-CI characteristics. It is found that the singularities mainly occur in the AI regime. The results indicate that the film may have a tendency to form very sharp tips due to the enhancement of the absolute instability induced by the electric field. We perform a theoretical analysis to study the behaviors of the singularities. The results show that there exists a self-similarity between the temporal and spatial distances from the singularities.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

A physical control interface with proprioceptive feedback and multiple degrees of freedom

NASA Technical Reports Server (NTRS)

Creasey, G. H.; Gow, D.; Sloan, Y.; Meadows, B.

1991-01-01

The use of the drug thalidomide by pregnant mothers in Britain resulted in a variety of deformities including the birth of children having no arms. Such children were provided with powered artificial arms with up to five degrees of freedom simultaneously controlled in real time by shoulder movement. The physiological sense of proprioception was extended from the user into the device, reducing the need for visual feedback and conscious control. With the banning of thalidomide, this technique fell into disuse but it is now being re-examined as a control mechanism for other artificial limbs and it may have other medical applications to allow patients to control formerly paralyzed limbs moved by electrical stimulation. It may also have commercial applications in robotic manipulation or physical interaction with virtual environments. To allow it to be investigated further, the original pneumatic control system has recently been converted to an electrical analogue to allow interfacing to electronic and computer-assisted systems. A harness incorporates force-sensitive resistors and linear potentiomenters for sensing position and force at the interface with the skin, and miniature electric motors and lead screws for feeding back to the user the position of the robotic arm and the forces applied to it. In the present system, control is applied to four degrees of freedom using elevation/depression and protraction/reaction of each shoulder so that each collar bone emulates a joystick. However, both electrical and mechanical components have been built in modular form to allow rapid replication and testing of a variety of force and position control strategies.

Graphene-interfaced electrical biosensor for label-free and sensitive detection of foodborne pathogenic E. coli O157:H7.

PubMed

Pandey, Ashish; Gurbuz, Yasar; Ozguz, Volkan; Niazi, Javed H; Qureshi, Anjum

2017-05-15

E. coli O157:H7 is an enterohemorrhagic bacteria responsible for serious foodborne outbreaks that causes diarrhoea, fever and vomiting in humans. Recent foodborne E. coli outbreaks has left a serious concern to public health. Therefore, there is an increasing demand for a simple, rapid and sensitive method for pathogen detection in contaminated foods. In this study, we developed a label-free electrical biosensor interfaced with graphene for sensitive detection of pathogenic bacteria. This biosensor was fabricated by interfacing graphene with interdigitated microelectrodes of capacitors that were biofunctionalized with E. coli O157:H7 specific antibodies for sensitive pathogenic bacteria detection. Here, graphene nanostructures on the sensor surface provided superior chemical properties such as high carrier mobility and biocompatibility with antibodies and bacteria. The sensors transduced the signal based on changes in dielectric properties (capacitance) through (i) polarization of captured cell-surface charges, (ii) cells' internal bioactivity, (iii) cell-wall's electronegativity or dipole moment and their relaxation and (iv) charge carrier mobility of graphene that modulated the electrical properties once the pathogenic E. coli O157:H7 captured on the sensor surface. Sensitive capacitance changes thus observed with graphene based capacitors were specific to E. coli O157:H7 strain with a sensitivity as low as 10-100 cells/ml. The proposed graphene based electrical biosensor provided advantages of speed, sensitivity, specificity and in-situ bacterial detection with no chemical mediators, represents a versatile approach for detection of a wide variety of other pathogens. Copyright © 2016 Elsevier B.V. All rights reserved.

Design process of a photonics network for military platforms

NASA Astrophysics Data System (ADS)

Nelson, George F.; Rao, Nagarajan M.; Krawczak, John A.; Stevens, Rick C.

1999-02-01

Technology development in photonics is rapidly progressing. The concept of a Unified Network will provide re- configurable network access to platform sensors, Vehicle Management Systems, Stores and avionics. The re-configurable taps into the network will accommodate present interface standards and provide scaleability for the insertion of future interfaces. Significant to this development is the design and test of the Optical Backplane Interconnect System funded by Naval Air Systems Command and developed by Lockheed Martin Tactical Defense Systems - Eagan. OBIS results in the merging of the electrical backplane and the optical backplane, with interconnect fabric and card edge connectors finally providing adequate electrical and optical card access. Presently OBIS will support 1.2 Gb/s per fiber over multiples of 12 fibers per ribbon cable.

Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts*

PubMed Central

Zhao, Yue; Li, Dong-sheng; Xing, Shou-xiang; Yang, De-ren; Jiang, Min-hua

2005-01-01

This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology. PMID:16252350

Electric control of superconducting transition through a spin-orbit coupled interface

PubMed Central

Ouassou, Jabir Ali; Di Bernardo, Angelo; Robinson, Jason W. A.; Linder, Jacob

2016-01-01

We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit coupling. By using analytical calculations and numerical simulations, we show that the transition temperature of such a device can be controlled by electric gating which alters the ratio of Rashba to Dresselhaus spin-orbit coupling. The results offer a new pathway to control superconductivity in spintronic devices. PMID:27426887

Pocket ECG electrode

NASA Technical Reports Server (NTRS)

Lund, Gordon F. (Inventor)

1982-01-01

A low-noise electrode suited for sensing electrocardiograms when chronically and subcutaneously implanted in a free-ranging subject. The electrode comprises a pocket-shaped electrically conductive member with a single entrance adapted to receive body fluids. The exterior of the member and the entrance region is coated with electrical insulation so that the only electrolyte/electrode interface is within the member remote from artifact-generating tissue. Cloth straps are bonded to the member to permit the electrode to be sutured to tissue and to provide electrical lead flexure relief.

Pocket ECG electrode

NASA Technical Reports Server (NTRS)

Lund, G. F. (Inventor)

1980-01-01

A low noise electrode suited for sensing electrocardiograms when chronically and subcutaneously implanted in a free ranging subject is described. The electrode comprises a pocket shaped electrically conductive member with a single entrance adapted to receive body fluids. The exterior of the member and the entrance region is coated with electrical insulation so that the only electrolyte/electrode interface is within the member, remote from artifact-generating tissue. Cloth straps are bonded to the member to permit the electrode to be sutured to tissue and to provide electrical lead flexure relief.

Electrical circuit model of ITO/AZO/Ge photodetector.

PubMed

Patel, Malkeshkumar; Kim, Joondong

2017-10-01

In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

Water permeation and electrical properties of pottants, backings, and pottant/backing composites

NASA Technical Reports Server (NTRS)

Orehotsky, J.

1986-01-01

It is reported that the interface between plastic film back covers and ethylene vinyl acetates (EVA) or polyvinyl butyral (PVB) in photovoltaic modules can influence water permeation, and electrial properties of the composites such as leakage current and dielectric constant. The interface can either be one of two dissimilar materials in physical contact with no intermixing, or the interface can constitute a thin zone which is an interphase of the two materials having a gradient composition from one material to the other. The former condition is described as a discrete interface. A discrete interface model was developed to predict water permeation, dielectric strength, and leakage current for EVA, ethylene methyl acrylate (EMA), and PVB coupled to Tedlar and mylar films. Experimental data was compared with predicted data.

Fire Ecology of Seeds from Rubus Spp.: A Competitor During Natural Pine Regeneration

Treesearch

Michael D. Cain; Michael G. Shelton

1999-01-01

Air-dried blackbeny (Rubus spp.) fruits were placed at three depths in a reconstructed forest floor and subjected to a simulated prescribed summer bum. Within the forest floor, fruits were placed on the L layer, at the upper-F/lower-F interface, and at the lower-F/mineral-soil interface. Wind for a headfire was generated by electric boxfans....

Vertically oriented graphene bridging active-layer/current-collector interface for ultrahigh rate supercapacitors.

PubMed

Bo, Zheng; Zhu, Weiguang; Ma, Wei; Wen, Zhenhai; Shuai, Xiaorui; Chen, Junhong; Yan, Jianhua; Wang, Zhihua; Cen, Kefa; Feng, Xinliang

2013-10-25

Dense networks of graphene nanosheets standing vertically on a current collector can work as numerous electrically conductive bridges to facilitate charge transport and mitigate the constriction/spreading resistance at the interface between the active material and the current collector. The vertically oriented graphene-bridged supercapacitors present excellent rate and power capabilities. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Channel plate for DNA sequencing

DOEpatents

Douthart, R.J.; Crowell, S.L.

1998-01-13

This invention is a channel plate that facilitates data compaction in DNA sequencing. The channel plate has a length, a width and a thickness, and further has a plurality of channels that are parallel. Each channel has a depth partially through the thickness of the channel plate. Additionally an interface edge permits electrical communication across an interface through a buffer to a deposition membrane surface. 15 figs.

Combined electrophoresis-electrospray interface and method

DOEpatents

Smith, R.D.; Udseth, H.R.; Barinaga, C.J.

1995-06-13

An improvement to the system and method is disclosed for analyzing molecular constituents of a composition sample that comprises improvements to an electrospray ionization source for interfacing to mass spectrometers and other detection devices. The improvement consists of establishing a unique electrical circuit pattern and nozzle configuration, a metallic coated and conical shaped capillary outlet, coupled with sizing of the capillary to obtain maximum sensitivity. 10 figs.

High temperature microelectrophoresis studies of the solid oxide/water interface

NASA Astrophysics Data System (ADS)

Fedkin, Mark Valentinovich

Metal oxides are abundant components of geo-environmental systems and are widely used materials in industry. Many practical applications of oxide materials require the knowledge of their surface properties at both ambient and elevated temperatures. Due to substantial technical challenges associated with experimental studies of solid/water interfaces at elevated temperatures, consistent data on adsorption, surface charge, and zeta potential for most oxide materials are limited to temperatures less than 100°C. A high temperature microelectrophoresis technique, developed in this study, made it possible to extend the zeta potential measurements at the solid oxide/water interface to 200°C. The design of the high temperature electrophoresis cell allowed for the visual microscopic observation of the electrophoretic movement of suspended particles through pressure-tight sapphire windows. The electrophoretic mobilities of metal oxide particles suspended in aqueous solutions were measured in a DC electric field as a function of pH, ionic strength, and temperature. The experimental procedure and methods for evaluation of the main experimental parameters (electrophoretic mobility, electric field strength, high temperature pH, and cell constant) have been developed. Zeta potentials were calculated from the experimental data using O'Brien and White's (1978) numerical solution for electrophoretic mobility equation. Zeta potentials and isoelectric points (IEP) of the metal oxide/aqueous solution interface were experimentally determined for ZrO2, TiO 2(rutile), and alphaAl2O3 at 25, 120, and 200°C. The background solutions used for the preparation of suspensions were pure H2O, NaCl(aq) (10-4--10-2 mol.kg-1), and SrCl2 (10-4 mol.kg, for TiO2). For all studied materials, the IEPs were found to regularly decrease with increasing temperature, which agrees with available theoretical predictions. Thermodynamic functions, including Gibbs energy, enthalpy, and heat capacity, were estimated for the H +/OH- adsorption from the experimental IEP data using the 1-pK model of the oxide/water interface. The experimental information obtained in this study combined with data from potentiometric titration and other experimental methods form the basis for future theoretical studies of the electrical double layer at the oxide/water interface.

Thin Films and Interfaces of AN Organic Semiconductor: Perylenetetracarboxylic Dianhydride

NASA Astrophysics Data System (ADS)

Hirose, Yutaka

Structural and electronic properties of thin films of an archetype organic molecular semiconductor, 3,4,9,10 -perylenetetracarboxylic dianhydride, (PTCDA) and of their interfaces are investigated. The first part of the thesis focuses on the growth of PTCDA thin films on graphite and GaAs. Molecular order in the direction parallel to the substrate is found to depend critically on the substrate surface properties, as revealed by marked differences in the crystallinity of films grown on graphite and Se-passivated GaAs surfaces (long range order), on the c(4 x 4) GaAs surface (medium range order), and on the (2 x 4)-c(2 x 8) GaAs surface (short range order). These results are discussed in terms of interface bonding between molecules and the substrate. The second part deals with the electronic and chemical structure of PTCDA thin films and the band lineup of the PTCDA/GaAs heterojunction investigated by Ultraviolet - and X-ray Photoemission Spectroscopies. A basic understanding of the valence band structure and chemical states is obtained with the help of a semi-empirical molecular orbital calculation. At the PTCDA/GaAs interface, the PTCDA highest occupied molecular orbital is found to be ~0.7 eV below the GaAs valence band maximum. This result is discussed in light of previous electrical measurements. Third, chemistry of metal deposition on PTCDA is investigated by synchrotron radiation photoemission spectroscopy. Al, Ti, In, and Sn are found to be highly reactive against PTCDA, yielding a considerable interfacial layer with a large density of states in the PTCDA gap. Ag and Au are found to be inert against PTCDA, producing abrupt interfaces. These results are found to be directly correlated with the electrical properties. Finally, chemistry of contacts formed by reversing the sequence of deposition, i.e. PTCDA on reactive metals (In, Sn, and Ti) is explored. The interfacial layers are found to be considerably smaller than for metals on PTCDA, in accordance with the reverse order of heats of adsorption of the two materials. The resulting interfaces are more abrupt presumably leading to more rectifying character of the electrical contacts.

Control of Terahertz Emission by Ultrafast Spin-Charge Current Conversion at Rashba Interfaces

DOE PAGES

Jungfleisch, Matthias B.; Zhang, Qi; Zhang, Wei; ...

2018-05-18

Here, we show that a femtosecond spin-current pulse can generate terahertz (THz) transients at Rashba interfaces between two nonmagnetic materials. Our results unambiguously demonstrate the importance of the interface in this conversion process that we interpret in terms of the inverse Rashba Edelstein effect, in contrast to the THz emission in the bulk conversion process via the inverse spin-Hall effect. Furthermore, we show that at Rashba interfaces the THz-field amplitude can be controlled by the helicity of the light. The optical generation of electric photocurrents by these interfacial effects in the femtosecond regime will open up new opportunities in ultrafastmore » spintronics.« less

Control of Terahertz Emission by Ultrafast Spin-Charge Current Conversion at Rashba Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungfleisch, Matthias B.; Zhang, Qi; Zhang, Wei

Here, we show that a femtosecond spin-current pulse can generate terahertz (THz) transients at Rashba interfaces between two nonmagnetic materials. Our results unambiguously demonstrate the importance of the interface in this conversion process that we interpret in terms of the inverse Rashba Edelstein effect, in contrast to the THz emission in the bulk conversion process via the inverse spin-Hall effect. Furthermore, we show that at Rashba interfaces the THz-field amplitude can be controlled by the helicity of the light. The optical generation of electric photocurrents by these interfacial effects in the femtosecond regime will open up new opportunities in ultrafastmore » spintronics.« less

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

Electric control of magnetism at the Fe/BaTiO 3 interface

DOE PAGES

Radaelli, G.; Petti, D.; Plekhanov, E.; ...

2014-03-03

Interfacial magnetoelectric coupling (MEC) is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BTO dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial MEC in the Fe/BTO system. At the Fe/BTO interface, an ultrathin FeO x layer exists, whose magnetization can be electrically and reversibly switched on-off at room-temperature bymore » reversing the BTO polarization. The suppression / recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BTO produces on the exchange coupling constants in the adjacent FeOx layer. The observed giant magnetoelectric response holds potential for optimizing interfacial MEC in view of efficient, low-power spintronic devices.« less

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices

NASA Astrophysics Data System (ADS)

Li, Jinchai; Yang, Weihuang; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong

2009-10-01

The internal electric field is modified by using Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices (SLs). The first-principles simulation results show that the internal electric field in SL has been significantly intensified due to the charge transferring from Si-doped interface to Mg-doped interface. Accordingly, the Mg- and Si-δ-codoped p-type Al0.2Ga0.8N/GaN SLs are grown by metalorganic vapor phase epitaxy and higher hole concentration as much as twice of that in modulation-doped SL has been achieved, as determined by Hall effect measurements. Furthermore, by applying Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN SLs with high Al content as the p-type layers, we have fabricated deep ultraviolet light emitting diodes with superior current-voltage characteristics by lowering Mg-acceptor activation energy.

Fast electric control of the droplet size in a microfluidic T-junction droplet generator

NASA Astrophysics Data System (ADS)

Shojaeian, Mostafa; Hardt, Steffen

2018-05-01

The effect of DC electric fields on the generation of droplets of water and xanthan gum solutions in sunflower oil at a microfluidic T-junction is experimentally studied. The electric field leads to a significant reduction of the droplet diameter, by about a factor of 2 in the case of water droplets. The droplet size can be tuned by varying the electric field strength, an effect that can be employed to produce a stream of droplets with a tailor-made size sequence. Compared to the case of purely hydrodynamic droplet production without electric fields, the electric control has about the same effect on the droplet size if the electric stress at the liquid/liquid interface is the same as the hydrodynamic stress.

Integration of High-Charge-Injection-Capacity Electrodes onto Polymer Softening Neural Interfaces.

PubMed

Arreaga-Salas, David E; Avendaño-Bolívar, Adrian; Simon, Dustin; Reit, Radu; Garcia-Sandoval, Aldo; Rennaker, Robert L; Voit, Walter

2015-12-09

Softening neural interfaces are implanted stiff to enable precise insertion, and they soften in physiological conditions to minimize modulus mismatch with tissue. In this work, a high-charge-injection-capacity iridium electrode fabrication process is detailed. For the first time, this process enables integration of iridium electrodes onto softening substrates using photolithography to define all features in the device. Importantly, no electroplated layers are utilized, leading to a highly scalable method for consistent device fabrication. The iridium electrode is metallically bonded to the gold conductor layer, which is covalently bonded to the softening substrate via sulfur-based click chemistry. The resulting shape-memory polymer neural interfaces can deliver more than 2 billion symmetric biphasic pulses (100 μs/phase), with a charge of 200 μC/cm(2) and geometric surface area (GSA) of 300 μm(2). A transfer-by-polymerization method is used in combination with standard semiconductor processing techniques to fabricate functional neural probes onto a thiol-ene-based, thin film substrate. Electrical stability is tested under simulated physiological conditions in an accelerated electrical aging paradigm with periodic measurement of electrochemical impedance spectra (EIS) and charge storage capacity (CSC) at various intervals. Electrochemical characterization and both optical and scanning electron microscopy suggest significant breakdown of the 600 nm-thick parylene-C insulation, although no delamination of the conductors or of the final electrode interface was observed. Minor cracking at the edges of the thin film iridium electrodes was occasionally observed. The resulting devices will provide electrical recording and stimulation of the nervous system to better understand neural wiring and timing, to target treatments for debilitating diseases, and to give neuroscientists spatially selective and specific tools to interact with the body. This approach has uses for cochlear implants, nerve cuff electrodes, penetrating cortical probes, spinal stimulators, blanket electrodes for the gut, stomach, and visceral organs and a host of other custom nerve-interfacing devices.

Anatomical and morphogenetic analysis of seismoelectric conversion patterns at geological units

NASA Astrophysics Data System (ADS)

Kröger, B.; Kemna, A.

2012-04-01

Characterisation of the hydraulic properties of a reservoir, such as porosity and permeability, and their spatial distribution plays an important role in many subsurface geophysical investigations. A fully developed seismoelectric exploration method is very appealing since it would offer the potential to directly determine these parameters in field-scale applications. In fluid-saturated rocks, seismic waves can generate electromagnetic fields, due to electrokinetic coupling mechanisms at the fluid-mineral interface. Using numerical modelling, we investigated the spatio-temporal occurrence and evolution of the seismoelectric effects that occur in spatially confined lithological units. Such geometries may represent clay lenses embedded in an aquifer or petroleum deposits in a host rock. For the modelling, we use a simplified time-domain formulation of the coupled physical problem and its efficient implementation in a 2D finite-element framework. Two occurring seismoelectric phenomena are investigated: (1) the co-seismic field associated with the seismic displacement at each point and (2) the interface response generated at layer boundaries. To gain insight into the morphogenetic field behaviour of the seismoelectric effects, we run numerical simulations using several material parameter set-ups for various target geometries. Accordingly, we varied both the thickness of the confined units and the value of the electrical bulk conductivity in the considered media. The analysis of the seismoelectric effects revealed an important difference in the generation of the interface response at either electrically conductive or resistive units. We find that the contrast in the electrical bulk conductivity between the host rock and the target geological unit controls the shape and structure of the seismoelectric conversion patterns. Our results show that the seismoelectric interface response captures both the petrophysical and geometrical characteristics of the converting geological unit. The considered models indicate the general potential of using the seismoelectric interface response for reservoir characterisation in hydrogeological or hydrocarbon exploration studies.

Four-Channel PC/104 MIL-STD-1553 Circuit Board

NASA Technical Reports Server (NTRS)

Cox, Gary L.

2004-01-01

The mini bus interface card (miniBIC) is the first four-channel electronic circuit board that conforms to MIL-STD-1553 and to the electrical-footprint portion of PC/104. [MIL-STD-1553 is a military standard that encompasses a method of communication and electrical- interface requirements for digital electronic subsystems connected to a data bus. PC/104 is an industry standard for compact, stackable modules that are fully compatible (in architecture, hardware, and software) with personal-computer data- and power-bus circuitry.] Prior to the development of the miniBIC, only one- and two-channel PC/104 MIL-STD-1553 boards were available. To obtain four channels, it was necessary to include at least two boards in a PC/104 stack. In comparison with such a two-board stack, the miniBIC takes up less space, consumes less power, and is more reliable. In addition, the miniBIC includes 32 digital input/output channels. The miniBIC (see figure) contains four MIL-STD-1553B hybrid integrated circuits (ICs), four transformers, a field-programmable gate array (FPGA), and an Industry Standard Architecture (ISA) interface. Each hybrid IC includes a MILSTD-1553 dual transceiver, memory-management circuitry, processor interface logic circuitry, and 64Kx16 bits of shared static random access memory. The memory is used to configure message and data blocks. In addition, 23 16-bit registers are available for (1) configuring the hybrid IC for, and starting it in, various modes of operation; (2) reading the status of the functionality of the hybrid IC; and (3) resetting the hybrid IC to a known state. The miniBIC can operate as a remote terminal, bus controller, or bus monitor. The FPGA provides the chip-select and data-strobe signals needed for operation of the hybrid ICs. The FPGA also receives interruption signals and forwards them to the ISA bus. The ISA interface connects the address, data, and control interfaces of the hybrid ICs to the ISA backplane. Each channel is, in effect, a MIL-STD-1553 interface that can operate either independently of the others or else as a redundant version of one of the others. The transformer in each channel provides electrical isolation between the rest of the miniBIC circuitry and the bus to which that channel is connected.

Electric field control of magnetic properties in FeRh/PMN-PT heterostructures

NASA Astrophysics Data System (ADS)

Xie, Yali; Zhan, Qingfeng; Shang, Tian; Yang, Huali; Liu, Yiwei; Wang, Baomin; Li, Run-Wei

2018-05-01

We investigated electric control of magnetic properties in FeRh/PMN-PT heterostructures. An electric field of 1 kV/cm applied on the PMN-PT substrate could increase the coercivity of FeRh film from 60 to 161 Oe at 360 K where the FeRh antiferromagnetic to ferromagnetic phase transition occurs. The electric field dependent coercive field reveals a butterfly shape, indicating a strain-mediated magnetoelectric coupling across the FeRh/PMN-PT interface. However, the uniaxial magnetic anisotropy of FeRh is almost unchanged with the applied electric field on the PMN-PT substrate, which suggests the change of coercivity in FeRh films is mainly due to the shift of the magnetic transition temperature under the electric field.

Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

2018-03-01

Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

First-Principle Investigation on the Bonding Mechanism of the Silicon Particles on the Copper Foil in Cold Spraying

NASA Astrophysics Data System (ADS)

Song, Jun; Liu, Juanfang; Chen, Qinghua

For lithium-ion batteries, the composite silicon-based electrodes can prevent from losing electrical contact and hence retain the capacity over many cycles. To uncover the adhesion mechanism on the interface formed by the copper foil and the thin silicon coatings during the cold gas dynamic spraying (CGDS) at the microscopic level, the first-principle calculations are performed to investigate the interface properties between them. The ideal work of adhesion, fracture toughness and the interface electronic properties are analyzed. It is found that all the atoms on the interface have vertical displacements, and covalent and ionic bonds are formed between the interfacial Cu and Si atoms which increases the bonding strength. However, the ideal work of adhesion on the interface is lower than one of the Cu bulk and Si bulk, so that fracture would be easier to take place on the interface.

Rotary Joints With Electrical Connections

NASA Technical Reports Server (NTRS)

Osborn, F. W.

1986-01-01

Power and data transmitted on many channels. Two different rotary joints equipped with electrical connections between rotating and stationary parts. One joint transmits axial thrust and serves as interface between spinning and nonspinning parts of Galileo spacecraft. Other is scanning (limitedrotation) joint that aims scientific instruments from nonspinning part. Selected features of both useful to designers of robots, advanced production equipment, and remotely controlled instruments.

An Experience of Teaching for Learning by Observation: Remote-Controlled Experiments on Electrical Circuits

ERIC Educational Resources Information Center

Kong, Siu Cheung; Yeung, Yau Yuen; Wu, Xian Qiu

2009-01-01

In order to facilitate senior primary school students in Hong Kong to engage in learning by observation of the phenomena related to electrical circuits, a design of a specific courseware system, of which the interactive human-machine interface was created with the use of an open-source software called the LabVNC, for conducting online…

Design, economic and system considerations of large wind-driven generators

NASA Technical Reports Server (NTRS)

Jorgensen, G. E.; Lotker, M.; Meier, R. C.; Brierley, D.

1976-01-01

The increased search for alternative energy sources has lead to renewed interest and studies of large wind-driven generators. This paper presents the results and considerations of such an investigation. The paper emphasizes the concept selection of wind-driven generators, system optimization, control system design, safety aspects, economic viability on electric utility systems and potential electric system interfacing problems.

Electrical and Structural Origin of Self-Healing Phenomena in Pentacene Thin Films.

PubMed

Kang, Evan S H; Zhang, Hongbin; Donner, Wolfgang; von Seggern, Heinz

2017-04-01

Self-healing induced by structural phase transformation is demonstrated using pentacene field-effect transistors. During the self-healing process, the electrical properties at the pentacene interfaces improve due to the phase transformation from monolayer phase to thin-film phase. Enhanced mobility is confirmed by first-principles calculations. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assembly and Design Miniaturization of Floating Spacecraft Simulator and Its Magnetic Docking Interface

DTIC Science & Technology

2016-09-01

Lithium Ion Battery Pack. Source: [13]. .....................................................................................16 Figure 17. BB-04SR...reducing friction. Figure 5. FSS Pneumatic Schematic Figure 6 illustrates the electrical schematic of the FSS. Two lithium - ion batteries ...D. MAJOR COMPONENTS FOR ELECTRICAL SYSTEM 1. Portable Battery Two rechargeable smart lithium ion battery packs (see Figure 16) are used to power

Instability of surface electron cyclotron TM-modes influenced by non-monochromatic alternating electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Girka, I. O., E-mail: igorgirka@karazin.ua; Girka, V. O.; Sydora, R. D.

2016-06-15

The influence of non-monochromaticity of an external alternating electric field on excitation of TM eigenmodes at harmonics of the electron cyclotron frequency is considered here. These TM-modes propagate along the plasma interface in a metal waveguide. An external static constant magnetic field is oriented perpendicularly to the plasma interface. The problem is solved theoretically using the kinetic Vlasov-Boltzmann equation for description of plasma particles motion and the Maxwell equations for description of the electromagnetic mode fields. The external alternating electric field is supposed to be a superposition of two waves, whose amplitudes are different and their frequencies correlate as 2:1.more » An infinite set of equations for electric field harmonics of these modes is derived with the aid of nonlinear boundary conditions. This set is solved using the wave packet approach consisting of the main harmonic frequency and two nearest satellite temporal harmonics. Analytical studies of the obtained set of equations allow one to find two different regimes of parametric instability, namely, enhancement and suppression of the instability. Numerical analysis of the instability is carried out for the three first electron cyclotron harmonics.« less

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Electrohydrodynamics of a viscous drop with inertia.

PubMed

Nganguia, H; Young, Y-N; Layton, A T; Lai, M-C; Hu, W-F

2016-05-01

Most of the existing numerical and theoretical investigations on the electrohydrodynamics of a viscous drop have focused on the creeping Stokes flow regime, where nonlinear inertia effects are neglected. In this work we study the inertia effects on the electrodeformation of a viscous drop under a DC electric field using a novel second-order immersed interface method. The inertia effects are quantified by the Ohnesorge number Oh, and the electric field is characterized by an electric capillary number Ca_{E}. Below the critical Ca_{E}, small to moderate electric field strength gives rise to steady equilibrium drop shapes. We found that, at a fixed Ca_{E}, inertia effects induce larger deformation for an oblate drop than a prolate drop, consistent with previous results in the literature. Moreover, our simulations results indicate that inertia effects on the equilibrium drop deformation are dictated by the direction of normal electric stress on the drop interface: Larger drop deformation is found when the normal electric stress points outward, and smaller drop deformation is found otherwise. To our knowledge, such inertia effects on the equilibrium drop deformation has not been reported in the literature. Above the critical Ca_{E}, no steady equilibrium drop deformation can be found, and often the drop breaks up into a number of daughter droplets. In particular, our Navier-Stokes simulations show that, for the parameters we use, (1) daughter droplets are larger in the presence of inertia, (2) the drop deformation evolves more rapidly compared to creeping flow, and (3) complex distribution of electric stresses for drops with inertia effects. Our results suggest that normal electric pressure may be a useful tool in predicting drop pinch-off in oblate deformations.

Radiation patterns of interfacial dipole antennas

NASA Technical Reports Server (NTRS)

Engheta, N.; Papas, C. H.; Elachi, C.

1982-01-01

The radiation pattern of an infinitesimal electric dipole is calculated for the case where the dipole is vertically located on the plane interface of two dielectric half spaces and for the case where the dipole is lying horizontally along the interface. For the vertical case, it is found that the radiation pattern has nulls at the interface and along the dipole axis. For the horizontal case, it is found that the pattern has a null at the interface; that the pattern in the upper half space, whose index of refraction is taken to be less than that of the lower half space, has a single lobe whose maximum is normal to the interface; and that in the lower half space, in the plane normal to the interface and containing the dipole, the pattern has three lobes, whereas in the plane normal to the interface and normally bisecting the dipole, the pattern has two maxima located symmetrically about a minimum. Interpretation of these results in terms of the Cerenkov effect is given.

Analysis of the electrical harmonic characteristics of a slip recovery variable speed generating system for wind turbine applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herrera, J.I.; Reddoch, T.W.

1988-02-01

Variable speed electric generating technology can enhance the general use of wind energy in electric utility applications. This enhancement results from two characteristic properties of variable speed wind turbine generators: an improvement in drive train damping characteristics, which results in reduced structural loading on the entire wind turbine system, and an improvement in the overall efficiency by using a more sophisticated electrical generator. Electronic converter systems are the focus of this investigation -- in particular, the properties of a wound-rotor induction generator with the slip recovery system and direct-current link converter. Experience with solid-state converter systems in large wind turbinesmore » is extremely limited. This report presents measurements of electrical performances of the slip recovery system and is limited to the terminal characteristics of the system. Variable speed generating systems working effectively in utility applications will require a satisfactory interface between the turbine/generator pair and the utility network. The electrical testing described herein focuses largely on the interface characteristics of the generating system. A MOD-O wind turbine was connected to a very strong system; thus, the voltage distortion was low and the total harmonic distortion in the utility voltage was less than 3% (within the 5% limit required by most utilities). The largest voltage component of a frequency below 60 Hz was 40 dB down from the 60-Hz< component. 8 refs., 14 figs., 8 tabs.« less

Liquid toroidal drop under uniform electric field

NASA Astrophysics Data System (ADS)

Zabarankin, Michael

2017-06-01

The problem of a stationary liquid toroidal drop freely suspended in another fluid and subjected to an electric field uniform at infinity is addressed analytically. Taylor's discriminating function implies that, when the phases have equal viscosities and are assumed to be slightly conducting (leaky dielectrics), a spherical drop is stationary when Q=(2R2+3R+2)/(7R2), where R and Q are ratios of the phases' electric conductivities and dielectric constants, respectively. This condition holds for any electric capillary number, CaE, that defines the ratio of electric stress to surface tension. Pairam and Fernández-Nieves showed experimentally that, in the absence of external forces (CaE=0), a toroidal drop shrinks towards its centre, and, consequently, the drop can be stationary only for some CaE>0. This work finds Q and CaE such that, under the presence of an electric field and with equal viscosities of the phases, a toroidal drop having major radius ρ and volume 4π/3 is qualitatively stationary-the normal velocity of the drop's interface is minute and the interface coincides visually with a streamline. The found Q and CaE depend on R and ρ, and for large ρ, e.g. ρ≥3, they have simple approximations: Q˜(R2+R+1)/(3R2) and CaE∼3 √{3 π ρ / 2 } (6 ln ⁡ρ +2 ln ⁡[96 π ]-9 )/ (12 ln ⁡ρ +4 ln ⁡[96 π ]-17 ) (R+1 ) 2/ (R-1 ) 2.

Dynamic behaviour of the silica-water-bio electrical double layer in the presence of a divalent electrolyte.

PubMed

Lowe, B M; Maekawa, Y; Shibuta, Y; Sakata, T; Skylaris, C-K; Green, N G

2017-01-25

Electronic devices are becoming increasingly used in chemical- and bio-sensing applications and therefore understanding the silica-electrolyte interface at the atomic scale is becoming increasingly important. For example, field-effect biosensors (BioFETs) operate by measuring perturbations in the electric field produced by the electrical double layer due to biomolecules binding on the surface. In this paper, explicit-solvent atomistic calculations of this electric field are presented and the structure and dynamics of the interface are investigated in different ionic strengths using molecular dynamics simulations. Novel results from simulation of the addition of DNA molecules and divalent ions are also presented, the latter of particular importance in both physiological solutions and biosensing experiments. The simulations demonstrated evidence of charge inversion, which is known to occur experimentally for divalent electrolyte systems. A strong interaction between ions and DNA phosphate groups was demonstrated in mixed electrolyte solutions, which are relevant to experimental observations of device sensitivity in the literature. The bound DNA resulted in local changes to the electric field at the surface; however, the spatial- and temporal-mean electric field showed no significant change. This result is explained by strong screening resulting from a combination of strongly polarised water and a compact layer of counterions around the DNA and silica surface. This work suggests that the saturation of the Stern layer is an important factor in determining BioFET response to increased salt concentration and provides novel insight into the interplay between ions and the EDL.

A novel flexible cuff-like microelectrode for dual purpose, acute and chronic electrical interfacing with the mouse cervical vagus nerve

NASA Astrophysics Data System (ADS)

Caravaca, A. S.; Tsaava, T.; Goldman, L.; Silverman, H.; Riggott, G.; Chavan, S. S.; Bouton, C.; Tracey, K. J.; Desimone, R.; Boyden, E. S.; Sohal, H. S.; Olofsson, P. S.

2017-12-01

Objective. Neural reflexes regulate immune responses and homeostasis. Advances in bioelectronic medicine indicate that electrical stimulation of the vagus nerve can be used to treat inflammatory disease, yet the understanding of neural signals that regulate inflammation is incomplete. Current interfaces with the vagus nerve do not permit effective chronic stimulation or recording in mouse models, which is vital to studying the molecular and neurophysiological mechanisms that control inflammation homeostasis in health and disease. We developed an implantable, dual purpose, multi-channel, flexible ‘microelectrode’ array, for recording and stimulation of the mouse vagus nerve. Approach. The array was microfabricated on an 8 µm layer of highly biocompatible parylene configured with 16 sites. The microelectrode was evaluated by studying the recording and stimulation performance. Mice were chronically implanted with devices for up to 12 weeks. Main results. Using the microelectrode in vivo, high fidelity signals were recorded during physiological challenges (e.g potassium chloride and interleukin-1β), and electrical stimulation of the vagus nerve produced the expected significant reduction of blood levels of tumor necrosis factor (TNF) in endotoxemia. Inflammatory cell infiltration at the microelectrode 12 weeks of implantation was limited according to radial distribution analysis of inflammatory cells. Significance. This novel device provides an important step towards a viable chronic interface for cervical vagus nerve stimulation and recording in mice.

Irradiation effects on electrical properties of DNA solution/Al Schottky diodes

NASA Astrophysics Data System (ADS)

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Iwamoto, Mitsumasa

2018-04-01

Deoxyribonucleic acid (DNA) has emerged as one of the most exciting organic material and as such extensively studied as a smart electronic material since the last few decades. DNA molecules have been reported to be utilized in the fabrication of small-scaled sensors and devices. In this current work, the effect of alpha radiation on the electrical properties of an Al/DNA/Al device using DNA solution was studied. It was observed that the carrier transport was governed by electrical interface properties at the Al-DNA interface. Current ( I)-voltage ( V) curves were analyzed by employing the interface limited Schottky current equations, i.e., conventional and Cheung and Cheung's models. Schottky parameters such as ideality factor, barrier height and series resistance were also determined. The extracted barrier height of the Schottky contact before and after radiation was calculated as 0.7845, 0.7877, 0.7948 and 0.7874 eV for the non-radiated, 12, 24 and 36 mGy, respectively. Series resistance of the structure was found to decline with the increase in the irradiation, which was due to the increase in the free radical root effects in charge carriers in the DNA solution. Results pertaining to the electronic profiles obtained in this work may provide a better understanding for the development of precise and rapid radiation sensors using DNA solution.

Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

NASA Astrophysics Data System (ADS)

Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

2018-01-01

We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

NASA Astrophysics Data System (ADS)

Dushaq, Ghada; Rasras, Mahmoud; Nayfeh, Ammar

2017-10-01

In this paper, Ge metal-oxide-semiconductor capacitors (MOSCAPs) are fabricated on Si using a low temperature two-step deposition technique by radio frequency plasma enhanced chemical vapor deposition. The MOSCAP gate stack consists of atomic layer deposition of Al2O3 as the gate oxide and a Ti/Al metal gate electrode. The electrical characteristics of 9 nm Al2O3/i-Ge/Si MOSCAPs exhibit an n-type (p-channel) behavior and normal high frequency C-V responses. In addition to CV measurements, the gate leakage versus the applied voltage is measured and discussed. Moreover, the electrical behavior is discussed in terms of the material and interface quality. The Ge/high-k interface trap density versus the surface potential is extracted using the most commonly used methods in detemining the interface traps based on the capacitance-voltage (C-V) curves. The discussion included the Dit calculation from the conductance method, the high-low frequency (Castagné-Vapaille) method, and the Terman (high-frequency) method. Furthermore, the origins of the discrepancies in the interface trap densities determined from the different methods are discussed. The study of the post annealed Ge layers at different temperatures in H2 and N2 gas ambient revealed an improved electrical and transport properties of the films treated at T  <  600 °C. Also, samples annealed at  <550 °C show the lowest threading dislocation density of ~1  ×  106 cm-2. The low temperature processing of Ge/Si demonstrates a great potential for p-channel transistor applications in a monolithically integrated CMOS platform.

A key discovery at the TiO2/dye/electrolyte interface: slow local charge compensation and a reversible electric field.

PubMed

Yang, Wenxing; Pazoki, Meysam; Eriksson, Anna I K; Hao, Yan; Boschloo, Gerrit

2015-07-14

Dye-sensitized mesoporous TiO2 films have been widely applied in energy and environmental science related research fields. The interaction between accumulated electrons inside TiO2 and cations in the surrounding electrolyte at the TiO2/dye/electrolyte interface is, however, still poorly understood. This interaction is undoubtedly important for both device performance and fundamental understanding. In the present study, Stark effects of an organic dye, LEG4, adsorbed on TiO2 were well characterized and used as a probe to monitor the local electric field at the TiO2/dye/electrolyte interface. By using time-resolved photo- and potential-induced absorption techniques, we found evidence for a slow (t > 0.1 s) local charge compensation mechanism, which follows electron accumulation inside the mesoporous TiO2. This slow local compensation was attributed to the penetration of cations from the electrolyte into the adsorbed dye layer, leading to a more localized charge compensation of the electrons inside TiO2. Importantly, when the electrons inside TiO2 were extracted, a remarkable reversal of the surface electric field was observed for the first time, which is attributed to the penetrated and/or adsorbed cations now being charge compensated by anions in the bulk electrolyte. A cation electrosorption model is developed to account for the overall process. These findings give new insights into the mesoporous TiO2/dye/electrolyte interface and the electron-cation interaction mechanism. Electrosorbed cations are proposed to act as electrostatic trap states for electrons in the mesoporous TiO2 electrode.

JPRS Report, Soviet Union, Foreign Military Review, No. 8, August 1987

DTIC Science & Technology

1988-01-28

Hinkley Point (1.5 million) and Hartlepool (1.3 million). In recent years the country has begun building large hydro- electric pumped storage power ...antenna 6. Interface equipment 7. Data transmission line terminal 8. Computer 9. Power supply plant control station 10. Radio-relay station terminals... stations and data transmission line, interface equipment, and power distribution unit (Fig. 3). The parallel computer, which performs operations on

Systems and methods for deactivating a matrix converter

DOEpatents

Ransom, Ray M.

2013-04-02

Systems and methods are provided for deactivating a matrix conversion module. An electrical system comprises an alternating current (AC) interface, a matrix conversion module coupled to the AC interface, an inductive element coupled between the AC interface and the matrix conversion module, and a control module. The control module is coupled to the matrix conversion module, and in response to a shutdown condition, the control module is configured to operate the matrix conversion module to deactivate the first conversion module when a magnitude of a current through the inductive element is less than a threshold value.

Interface standards for computer equipment

NASA Technical Reports Server (NTRS)

1976-01-01

The ability to configure data systems using modules provided by independent manufacturers is complicated by the wide range of electrical, mechanical, and functional characteristics exhibited within the equipment provided by different manufacturers of computers, peripherals, and terminal devices. A number of international organizations were and still are involved in the creation of standards that enable devices to be interconnected with minimal difficulty, usually involving only a cable or data bus connection that is defined by the standard. The elements covered by an interface standard are covered and the most prominent interface standards presently in use are identified and described.

Bubble memory module

NASA Technical Reports Server (NTRS)

Bohning, O. D.; Becker, F. J.

1980-01-01

Design, fabrication and test of partially populated prototype recorder using 100 kilobit serial chips is described. Electrical interface, operating modes, and mechanical design of several module configurations are discussed. Fabrication and test of the module demonstrated the practicality of multiplexing resulting in lower power, weight, and volume. This effort resulted in the completion of a module consisting of a fully engineered printed circuit storage board populated with 5 of 8 possible cells and a wire wrapped electronics board. Interface of the module is 16 bits parallel at a maximum of 1.33 megabits per second data rate on either of two interface buses.

Si-based optical I/O for optical memory interface

NASA Astrophysics Data System (ADS)

Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

2012-01-01

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

Sensor Open System Architecture (SOSA) evolution for collaborative standards development

NASA Astrophysics Data System (ADS)

Collier, Charles Patrick; Lipkin, Ilya; Davidson, Steven A.; Baldwin, Rusty; Orlovsky, Michael C.; Ibrahim, Tim

2017-04-01

The Sensor Open System Architecture (SOSA) is a C4ISR-focused technical and economic collaborative effort between the Air Force, Navy, Army, the Department of Defense (DoD), Industry, and other Governmental agencies to develop (and incorporate) a technical Open Systems Architecture standard in order to maximize C4ISR sub-system, system, and platform affordability, re-configurability, and hardware/software/firmware re-use. The SOSA effort will effectively create an operational and technical framework for the integration of disparate payloads into C4ISR systems; with a focus on the development of a modular decomposition (defining functions and behaviors) and associated key interfaces (physical and logical) for common multi-purpose architecture for radar, EO/IR, SIGINT, EW, and Communications. SOSA addresses hardware, software, and mechanical/electrical interfaces. The modular decomposition will produce a set of re-useable components, interfaces, and sub-systems that engender reusable capabilities. This, in effect, creates a realistic and affordable ecosystem enabling mission effectiveness through systematic re-use of all available re-composed hardware, software, and electrical/mechanical base components and interfaces. To this end, SOSA will leverage existing standards as much as possible and evolve the SOSA architecture through modification, reuse, and enhancements to achieve C4ISR goals. This paper will present accomplishments over the first year of SOSA initiative.

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

NASA Astrophysics Data System (ADS)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

NASA Astrophysics Data System (ADS)

Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

2017-12-01

III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Near infrared spectroscopy based brain-computer interface

NASA Astrophysics Data System (ADS)

Ranganatha, Sitaram; Hoshi, Yoko; Guan, Cuntai

2005-04-01

A brain-computer interface (BCI) provides users with an alternative output channel other than the normal output path of the brain. BCI is being given much attention recently as an alternate mode of communication and control for the disabled, such as patients suffering from Amyotrophic Lateral Sclerosis (ALS) or "locked-in". BCI may also find applications in military, education and entertainment. Most of the existing BCI systems which rely on the brain's electrical activity use scalp EEG signals. The scalp EEG is an inherently noisy and non-linear signal. The signal is detrimentally affected by various artifacts such as the EOG, EMG, ECG and so forth. EEG is cumbersome to use in practice, because of the need for applying conductive gel, and the need for the subject to be immobile. There is an urgent need for a more accessible interface that uses a more direct measure of cognitive function to control an output device. The optical response of Near Infrared Spectroscopy (NIRS) denoting brain activation can be used as an alternative to electrical signals, with the intention of developing a more practical and user-friendly BCI. In this paper, a new method of brain-computer interface (BCI) based on NIRS is proposed. Preliminary results of our experiments towards developing this system are reported.

A novel interface circuit for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Yu, Wuqi; Ma, Jiahao; Zhang, Zhaohua; Ren, Tianling

2017-10-01

For most triboelectric nanogenerators (TENGs), the electric output should be a short AC pulse, which has the common characteristic of high voltage but low current. Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics. The traditional AC voltage regulator circuit which commonly consists of transformer, rectifier bridge, filter capacitor, and voltage regulator diode is not suitable for the TENG because the transformer’s consumption of power is appreciable if the TENG output is small. This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated. The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip, the rectifying circuit, a comparator chip and switch chip. More important, the whole interface circuit is completely self-powered and self-controlled. Meanwhile, the chip is widely used in the circuit, so it is convenient to integrate into PCB. In short, this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

Soft, curved electrode systems capable of integration on the auricle as a persistent brain–computer interface

PubMed Central

Norton, James J. S.; Lee, Dong Sup; Lee, Jung Woo; Lee, Woosik; Kwon, Ohjin; Won, Phillip; Jung, Sung-Young; Cheng, Huanyu; Jeong, Jae-Woong; Akce, Abdullah; Umunna, Stephen; Na, Ilyoun; Kwon, Yong Ho; Wang, Xiao-Qi; Liu, ZhuangJian; Paik, Ungyu; Huang, Yonggang; Bretl, Timothy; Yeo, Woon-Hong; Rogers, John A.

2015-01-01

Recent advances in electrodes for noninvasive recording of electroencephalograms expand opportunities collecting such data for diagnosis of neurological disorders and brain–computer interfaces. Existing technologies, however, cannot be used effectively in continuous, uninterrupted modes for more than a few days due to irritation and irreversible degradation in the electrical and mechanical properties of the skin interface. Here we introduce a soft, foldable collection of electrodes in open, fractal mesh geometries that can mount directly and chronically on the complex surface topology of the auricle and the mastoid, to provide high-fidelity and long-term capture of electroencephalograms in ways that avoid any significant thermal, electrical, or mechanical loading of the skin. Experimental and computational studies establish the fundamental aspects of the bending and stretching mechanics that enable this type of intimate integration on the highly irregular and textured surfaces of the auricle. Cell level tests and thermal imaging studies establish the biocompatibility and wearability of such systems, with examples of high-quality measurements over periods of 2 wk with devices that remain mounted throughout daily activities including vigorous exercise, swimming, sleeping, and bathing. Demonstrations include a text speller with a steady-state visually evoked potential-based brain–computer interface and elicitation of an event-related potential (P300 wave). PMID:25775550

Soft, curved electrode systems capable of integration on the auricle as a persistent brain-computer interface.

PubMed

Norton, James J S; Lee, Dong Sup; Lee, Jung Woo; Lee, Woosik; Kwon, Ohjin; Won, Phillip; Jung, Sung-Young; Cheng, Huanyu; Jeong, Jae-Woong; Akce, Abdullah; Umunna, Stephen; Na, Ilyoun; Kwon, Yong Ho; Wang, Xiao-Qi; Liu, ZhuangJian; Paik, Ungyu; Huang, Yonggang; Bretl, Timothy; Yeo, Woon-Hong; Rogers, John A

2015-03-31

Recent advances in electrodes for noninvasive recording of electroencephalograms expand opportunities collecting such data for diagnosis of neurological disorders and brain-computer interfaces. Existing technologies, however, cannot be used effectively in continuous, uninterrupted modes for more than a few days due to irritation and irreversible degradation in the electrical and mechanical properties of the skin interface. Here we introduce a soft, foldable collection of electrodes in open, fractal mesh geometries that can mount directly and chronically on the complex surface topology of the auricle and the mastoid, to provide high-fidelity and long-term capture of electroencephalograms in ways that avoid any significant thermal, electrical, or mechanical loading of the skin. Experimental and computational studies establish the fundamental aspects of the bending and stretching mechanics that enable this type of intimate integration on the highly irregular and textured surfaces of the auricle. Cell level tests and thermal imaging studies establish the biocompatibility and wearability of such systems, with examples of high-quality measurements over periods of 2 wk with devices that remain mounted throughout daily activities including vigorous exercise, swimming, sleeping, and bathing. Demonstrations include a text speller with a steady-state visually evoked potential-based brain-computer interface and elicitation of an event-related potential (P300 wave).

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James

2016-01-01

HERMeS - Hall Effect Rocket with Magnetic Shielding. Developed through a joint effort by NASA/GRC and the Jet Propulsion Laboratory (JPL). Design goals: High power (12.5 kW) high Isp (3000 sec), high efficiency (> 60%), high throughput (10,000 kg), reduced plasma erosion and increased life (5 yrs) to support Asteroid Redirect Robotic Mission (ARRM). Further details see "Performance, Facility Pressure Effects and Stability Characterization Tests of NASAs HERMeS Thruster" by H. Kamhawi and team. Hall Thrusters (HT) inherently operate at elevated temperatures approx. 600 C (or more). Due to electric magnetic (E x B) fields used to ionize and accelerate propellant gas particles (i.e., plasma). Cooling is largely limited to radiation in vacuum environment.Thus the hardware components must withstand large start-up delta-T's. HT's are constructed of multiple materials; assorted metals, non-metals and ceramics for their required electrical and magnetic properties. To mitigate thermal stresses HT design must accommodate the differential thermal growth from a wide range of material Coef. of Thermal Expansion (CTEs). Prohibiting the use of some bolted/torqued interfaces.Commonly use spring loaded interfaces, particularly at the metal-to-ceramic interfaces to allow for slippage.However most component interfaces must also effectively conduct heat to the external surfaces for dissipation by radiation.Thus contact pressure and area are important.

Soft, curved electrode systems capable of integration on the auricle as a persistent brain–computer interface

DOE PAGES

Norton, James J. S.; Lee, Dong Sup; Lee, Jung Woo; ...

2015-03-16

Some recent advances in electrodes for noninvasive recording of electroencephalograms expand opportunities collecting such data for diagnosis of neurological disorders and brain–computer interfaces. Existing technologies, but, cannot be used effectively in continuous, uninterrupted modes for more than a few days due to irritation and irreversible degradation in the electrical and mechanical properties of the skin interface. We introduce a soft, foldable collection of electrodes in open, fractal mesh geometries that can mount directly and chronically on the complex surface topology of the auricle and the mastoid, to provide high-fidelity and long-term capture of electroencephalograms in ways that avoid any significantmore » thermal, electrical, or mechanical loading of the skin. Experimental and computational studies establish the fundamental aspects of the bending and stretching mechanics that enable this type of intimate integration on the highly irregular and textured surfaces of the auricle. Furthermore, cell level tests and thermal imaging studies establish the biocompatibility and wearability of such systems, with examples of high-quality measurements over periods of 2 wk with devices that remain mounted throughout daily activities including vigorous exercise, swimming, sleeping, and bathing. Demonstrations include a text speller with a steady-state visually evoked potential-based brain–computer interface and elicitation of an event-related potential (P300 wave).« less

Surface roughness scattering of electrons in bulk mosfets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuverink, Amanda Renee

2015-11-01

Surface-roughness scattering of electrons at the Si-SiO 2 interface is a very important consideration when analyzing Si metal-oxide-semiconductor field-effect transistors (MOSFETs). Scattering reduces the mobility of the electrons and degrades the device performance. 250-nm and 50-nm bulk MOSFETs were simulated with varying device parameters and mesh sizes in order to compare the effects of surface-roughness scattering in multiple devices. The simulation framework includes the ensemble Monte Carlo method used to solve the Boltzmann transport equation coupled with a successive over-relaxation method used to solve the two-dimensional Poisson's equation. Four methods for simulating the surface-roughness scattering of electrons were implemented onmore » both devices and compared: the constant specularity parameter, the momentum-dependent specularity parameter, and the real-space-roughness method with both uniform and varying electric fields. The specularity parameter is the probability of an electron scattering speculariy from a rough surface. It can be chosen as a constant, characterizing partially diffuse scattering of all electrons from the surface the same way, or it can be momentum dependent, where the size of rms roughness and the normal component of the electron wave number determine the probability of electron-momentum randomization. The real-space rough surface method uses the rms roughness height and correlation length of an actual MOSFET to simulate a rough interface. Due to their charge, electrons scatter from the electric field and not directly from the surface. If the electric field is kept uniform, the electrons do not perceive the roughness and scatter as if from a at surface. However, if the field is allowed to vary, the electrons scatter from the varying electric field as they would in a MOSFET. These methods were implemented for both the 50-nm and 250-nm MOSFETs, and using the rms roughness heights and correlation lengths for real devices. The current-voltage and mobility-electric field curves were plotted for each method on the two devices and compared. The conclusion is that the specularity-parameter methods are valuable as simple models for relatively smooth interfaces. However, they have limitations, as they cannot accurately describe the drastic reduction in the current and the electron mobility that occur in MOSFETs with very rough Si-SiO 2 interfaces.« less

Does this interface make my sensor look bad? Basic principles for designing usable, useful interfaces for sensor technology operators

NASA Astrophysics Data System (ADS)

McNamara, Laura A.; Berg, Leif; Butler, Karin; Klein, Laura

2017-05-01

Even as remote sensing technology has advanced in leaps and bounds over the past decade, the remote sensing community lacks interfaces and interaction models that facilitate effective human operation of our sensor platforms. Interfaces that make great sense to electrical engineers and flight test crews can be anxiety-inducing to operational users who lack professional experience in the design and testing of sophisticated remote sensing platforms. In this paper, we reflect on an 18-month collaboration which our Sandia National Laboratory research team partnered with an industry software team to identify and fix critical issues in a widely-used sensor interface. Drawing on basic principles from cognitive and perceptual psychology and interaction design, we provide simple, easily learned guidance for minimizing common barriers to system learnability, memorability, and user engagement.

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

History-dependent ion transport through conical nanopipettes and the implications in energy conversion dynamics at nanoscale interfaces.

PubMed

Li, Yan; Wang, Dengchao; Kvetny, Maksim M; Brown, Warren; Liu, Juan; Wang, Gangli

2015-01-01

The dynamics of ion transport at nanostructured substrate-solution interfaces play vital roles in high-density energy conversion, stochastic chemical sensing and biosensing, membrane separation, nanofluidics and fundamental nanoelectrochemistry. Further advancements in these applications require a fundamental understanding of ion transport at nanoscale interfaces. The understanding of the dynamic or transient transport, and the key physical process involved, is limited, which contrasts sharply with widely studied steady-state ion transport features at atomic and nanometer scale interfaces. Here we report striking time-dependent ion transport characteristics at nanoscale interfaces in current-potential ( I - V ) measurements and theoretical analyses. First, a unique non-zero I - V cross-point and pinched I - V curves are established as signatures to characterize the dynamics of ion transport through individual conical nanopipettes. Second, ion transport against a concentration gradient is regulated by applied and surface electrical fields. The concept of ion pumping or separation is demonstrated via the selective ion transport against concentration gradients through individual nanopipettes. Third, this dynamic ion transport process under a predefined salinity gradient is discussed in the context of nanoscale energy conversion in supercapacitor type charging-discharging, as well as chemical and electrical energy conversion. The analysis of the emerging current-potential features establishes the urgently needed physical foundation for energy conversion employing ordered nanostructures. The elucidated mechanism and established methodology can be generalized into broadly-defined nanoporous materials and devices for improved energy, separation and sensing applications.

History-dependent ion transport through conical nanopipettes and the implications in energy conversion dynamics at nanoscale interfaces

DOE PAGES

Li, Yan; Wang, Dengchao; Kvetny, Maksim M.; ...

2014-08-20

The dynamics of ion transport at nanostructured substrate–solution interfaces play vital roles in high-density energy conversion, stochastic chemical sensing and biosensing, membrane separation, nanofluidics and fundamental nanoelectrochemistry. Advancements in these applications require a fundamental understanding of ion transport at nanoscale interfaces. The understanding of the dynamic or transient transport, and the key physical process involved, is limited, which contrasts sharply with widely studied steady-state ion transport features at atomic and nanometer scale interfaces. Here we report striking time-dependent ion transport characteristics at nanoscale interfaces in current–potential (I–V) measurements and theoretical analyses. First, a unique non-zero I–V cross-point and pinched I–Vmore » curves are established as signatures to characterize the dynamics of ion transport through individual conical nanopipettes. Moreoever, ion transport against a concentration gradient is regulated by applied and surface electrical fields. The concept of ion pumping or separation is demonstrated via the selective ion transport against concentration gradients through individual nanopipettes. Third, this dynamic ion transport process under a predefined salinity gradient is discussed in the context of nanoscale energy conversion in supercapacitor type charging–discharging, as well as chemical and electrical energy conversion. Our analysis of the emerging current–potential features establishes the urgently needed physical foundation for energy conversion employing ordered nanostructures. The elucidated mechanism and established methodology can be generalized into broadly-defined nanoporous materials and devices for improved energy, separation and sensing applications.« less

Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

NASA Astrophysics Data System (ADS)

Badali, Yosef; Nikravan, Afsoun; Altındal, Şemsettin; Uslu, İbrahim

2018-03-01

The aim of this study is to improve the electrical property of Ag/n-Si metal-semiconductor (MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using electrospinning technique. To illustrate the utility of the Ru-doped PVP interface layer, current-voltage (I-V) characteristics of Ag/n-Si (MS) and Ag/Ru-doped PVP/n-Si metal-polymer-semiconductor (MPS) structures was carried out. In addition, the main electrical parameters of the fabricated Ag/Ru-doped PVP/n-Si structures were investigated as a function of frequency and electric field using impedance spectroscopy method (ISM). The capacitance-voltage (C-V) plot showed an anomalous peak in the depletion region due to the special density distribution of interface traps/states (D it /N ss) and interlayer. Both the values of series resistance (R s) and N ss were drawn as a function of voltage and frequency between 0.5 kHz and 5 MHz at room temperature and they had a peak behavior in the depletion region. Some important parameters of the sample such as the donor concentration atoms (N D), Fermi energy (E F ), thickness of the depletion region (W D), barrier height (Φ B0 ) and R s were determined from the C -2 versus V plot for each frequency. The values of N D , W D , Φ B0 and R s were changed from 1 × 1015 cm-3, 9.61 × 10-5 cm, 0.94 eV and 19,055 Ω (at 0.5 kHz) to 0.13 × 1015 cm-3, 27.4 × 10-4 cm, 1.04 eV and 70 Ω (at 5 MHz), respectively. As a result of the experiments, it is observed that the change in electrical parameters becomes more effective at lower frequencies due to the N ss and their relaxation time (τ), dipole and surface polarizations.

Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

NASA Astrophysics Data System (ADS)

Badali, Yosef; Nikravan, Afsoun; Altındal, Şemsettin; Uslu, İbrahim

2018-07-01

The aim of this study is to improve the electrical property of Ag/n-Si metal-semiconductor (MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using electrospinning technique. To illustrate the utility of the Ru-doped PVP interface layer, current-voltage ( I-V) characteristics of Ag/n-Si (MS) and Ag/Ru-doped PVP/n-Si metal-polymer-semiconductor (MPS) structures was carried out. In addition, the main electrical parameters of the fabricated Ag/Ru-doped PVP/n-Si structures were investigated as a function of frequency and electric field using impedance spectroscopy method (ISM). The capacitance-voltage ( C-V) plot showed an anomalous peak in the depletion region due to the special density distribution of interface traps/states ( D it /N ss) and interlayer. Both the values of series resistance ( R s) and N ss were drawn as a function of voltage and frequency between 0.5 kHz and 5 MHz at room temperature and they had a peak behavior in the depletion region. Some important parameters of the sample such as the donor concentration atoms ( N D), Fermi energy ( E F ), thickness of the depletion region ( W D), barrier height ( Φ B0 ) and R s were determined from the C - 2 versus V plot for each frequency. The values of N D , W D , Φ B0 and R s were changed from 1 × 1015 cm-3, 9.61 × 10-5 cm, 0.94 eV and 19,055 Ω (at 0.5 kHz) to 0.13 × 1015 cm-3, 27.4 × 10-4 cm, 1.04 eV and 70 Ω (at 5 MHz), respectively. As a result of the experiments, it is observed that the change in electrical parameters becomes more effective at lower frequencies due to the N ss and their relaxation time ( τ), dipole and surface polarizations.

Conducting polymer electrodes for visual prostheses.

PubMed

Green, R A; Devillaine, F; Dodds, C; Matteucci, P; Chen, S; Byrnes-Preston, P; Poole-Warren, L A; Lovell, N H; Suaning, G J

2010-01-01

Conducting polymers (CPs) have the potential to provide superior neural interfaces to conventional metal electrodes by introducing more efficient charge transfer across the same geometric area. In this study the conducting polymer poly(ethylene dioxythiophene) (PEDOT) was coated on platinum (Pt) microelectrode arrays. The in vitro electrical characteristics were assessed during biphasic stimulation regimes applied between electrode pairs. It was demonstrated that PEDOT could reduce the potential excursion at a Pt electrode interface by an order of magnitude. The charge injection limit of PEDOT was found to be 15 x larger than Pt. Additionally, PEDOT coated electrodes were acutely implanted in the suprachoroidal space of a cat retina. It was demonstrated that PEDOT coated electrodes also had lower potential excursions in vivo and electrically evoked potentials (EEPs) could be detected within the vision cortex.

KENNEDY SPACE CENTER, FLA. - Workers in KSC's Vertical Processing Facility make final adjustments to the Flight Support System (FSS) for STS-82, the second Hubble Space Telescope servicing mission. The FSS is reusable flight hardware that provides the mechanical, structural and electrical interfaces between HST, the space support equipment and the orbiter for payload retrieval and on-orbit servicing. Liftoff aboard Discovery is targeted Feb. 11 with a crew of seven.

NASA Image and Video Library

1997-01-16

KENNEDY SPACE CENTER, FLA. - Workers in KSC's Vertical Processing Facility make final adjustments to the Flight Support System (FSS) for STS-82, the second Hubble Space Telescope servicing mission. The FSS is reusable flight hardware that provides the mechanical, structural and electrical interfaces between HST, the space support equipment and the orbiter for payload retrieval and on-orbit servicing. Liftoff aboard Discovery is targeted Feb. 11 with a crew of seven.

Electrobiorefineries: Unlocking the Synergy of Electrochemical and Microbial Conversions.

PubMed

Harnisch, Falk; Urban, Carolin

2017-12-13

An integrated biobased economy urges an alliance of the two realms of "chemical production" and "electric power". The concept of electrobiorefineries provides a blueprint for such an alliance. Joining the forces of microbial and electrochemical conversions in electrobiorefineries allows interfacing the production, storage, and exploitation of electricity as well as biobased chemicals. Electrobiorefineries are a technological evolution of biorefineries by the addition of (bio)electrochemical transformations. This interfacing of microbial and electrochemical conversions will result in synergies affecting the entire process line, like enlarging the product portfolio, increasing the productivity, or exploiting new feedstock. A special emphasis is given to the utilization of oxidative and reductive electroorganic reactions of microbially produced intermediates that may serve as privileged building blocks. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sun-to-power cells layer by layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moseke, Dawn; Richards, Robin; Moseke, Daniel

Representing the Center for Interface Science: Solar Electric Materials (CISSEM), this document is one of the entries in the Ten Hundred and One Word Challenge. As part of the challenge, the 46 Energy Frontier Research Centers were invited to represent their science in images, cartoons, photos, words and original paintings, but any descriptions or words could only use the 1000 most commonly used words in the English language, with the addition of one word important to each of the EFRCs and the mission of DOE: energy. The mission of the CISSEM is to advance the understanding of interface science underlyingmore » solar energy conversion technologies based on organic and organic-inorganic hybrid materials; and to inspire, recruit and train future scientists and leaders in basic science of solar electric conversion.« less

Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes

NASA Astrophysics Data System (ADS)

Chen, Feng; Schafranek, Robert; Wachau, André; Zhukov, Sergey; Glaum, Julia; Granzow, Torsten; von Seggern, Heinz; Klein, Andreas

2010-11-01

The influence of Pt, tin-doped In2O3, and RuO2 electrodes on the electrical fatigue of bulk ceramic Pb(Zr,Ti)O3 (PZT) has been studied. Schottky barrier heights at the ferroelectric/electrode interfaces vary by more than one electronvolt for different electrode materials and do not depend on crystallographic orientation of the interface. Despite different barrier heights, hysteresis loops of polarization, strain, permittivity, and piezoelectric constant and the switching kinetics are identical for all electrodes. A 20% reduction in polarization after 106 bipolar cycles is observed for all the samples. In contrast to PZT thin films, the loss of remanent polarization with bipolar switching cycles does not significantly depend on the electrode material.

Positrons as interface-sensitive probes of polar semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Makkonen, I.; Snicker, A.; Puska, M. J.; Mäki, J.-M.; Tuomisto, F.

2010-07-01

Group-III nitrides in their wurtzite crystal structure are characterized by large spontaneous polarization and significant piezoelectric contributions in heterostructures formed of these materials. Polarization discontinuities in polar heterostructures grown along the (0001) direction result in huge built-in electric fields on the order of megavolt per centimeter. We choose the III-nitride heterostructures as archetypal representatives of polar heterostructures formed of semiconducting or insulating materials and study the behavior of positrons in these structures using first-principles electronic-structure theory supported by positron annihilation experiments for bulk systems. The strong electric fields drive positrons close to interfaces, which is clearly seen in the predicted momentum distributions of annihilating electron-positron pairs as changes relative to the constituent bulk materials. Implications of the effect to positron defect studies of polar heterostructures are addressed.

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

PubMed Central

2014-01-01

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology. PMID:25057817

Electrical Characterization of 3D Au Microelectrodes for Use in Retinal Prostheses.

PubMed

Lee, Sangmin; Ahn, Jae Hyun; Seo, Jong-Mo; Chung, Hum; Cho, Dong-Il Dan

2015-06-17

In order to provide high-quality visual information to patients who have implanted retinal prosthetic devices, the number of microelectrodes should be large. As the number of microelectrodes is increased, the dimensions of each microelectrode must be decreased, which in turn results in an increased microelectrode interface impedance and decreased injection current dynamic range. In order to improve the trade-off envelope between the number of microelectrodes and the current injection characteristics, a 3D microelectrode structure can be used as an alternative. In this paper, the electrical characteristics of 2D and 3D Au microelectrodes were investigated. In order to examine the effects of the structural difference, 2D and 3D Au microelectrodes with different base areas but similar effective surface areas were fabricated and evaluated. Interface impedances were measured and similar dynamic ranges were obtained for both 2D and 3D Au microelectrodes. These results indicate that more electrodes can be implemented in the same area if 3D designs are used. Furthermore, the 3D Au microelectrodes showed substantially enhanced electrical durability characteristics against over-injected stimulation currents, withstanding electrical currents that are much larger than the limit measured for 2D microelectrodes of similar area. This enhanced electrical durability property of 3D Au microelectrodes is a new finding in microelectrode research, and makes 3D microelectrodes very desirable devices.

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

PubMed Central

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.; Tang, Keqi

2014-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations. PMID:25267087

On the ionization and ion transmission efficiencies of different ESI-MS interfaces.

PubMed

Cox, Jonathan T; Marginean, Ioan; Smith, Richard D; Tang, Keqi

2015-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas-phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method, we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations.

Ferromagnetic, folded electrode composite as a soft interface to the skin for long-term electrophysiological recording.

PubMed

Jang, Kyung-In; Jung, Han Na; Lee, Jung Woo; Xu, Sheng; Liu, Yu Hao; Ma, Yinji; Jeong, Jae-Woong; Song, Young Min; Kim, Jeonghyun; Kim, Bong Hun; Banks, Anthony; Kwak, Jean Won; Yang, Yiyuan; Shi, Dawei; Wei, Zijun; Feng, Xue; Paik, Ungyu; Huang, Yonggang; Ghaffari, Roozbeh; Rogers, John A

2016-10-25

This paper introduces a class of ferromagnetic, folded, soft composite material for skin-interfaced electrodes with releasable interfaces to stretchable, wireless electronic measurement systems. These electrodes establish intimate, adhesive contacts to the skin, in dimensionally stable formats compatible with multiple days of continuous operation, with several key advantages over conventional hydrogel based alternatives. The reported studies focus on aspects ranging from ferromagnetic and mechanical behavior of the materials systems, to electrical properties associated with their skin interface, to system-level integration for advanced electrophysiological monitoring applications. The work combines experimental measurement and theoretical modeling to establish the key design considerations. These concepts have potential uses across a diverse set of skin-integrated electronic technologies.

Second harmonic generation study of malachite green adsorption at the interface between air and an electrolyte solution: observing the effect of excess electrical charge density at the interface.

PubMed

Song, Jinsuk; Kim, Mahn Won

2010-03-11

Understanding the differential adsorption of ions at the interface of an electrolyte solution is very important because it is closely related, not only to the fundamental aspects of biological systems, but also to many industrial applications. We have measured the excess interfacial negative charge density at air-electrolyte solution interfaces by using resonant second harmonic generation of oppositely charged probe molecules. The excess charge density increased with the square root of the bulk electrolyte concentration. A new adsorption model that includes the electrostatic interaction between adsorbed molecules is proposed to explain the measured adsorption isotherm, and it is in good agreement with the experimental results.

Department of Defense Interface Standard Electromagnetic Environmental Effects Requirements for Systems

DTIC Science & Technology

2002-12-19

effective tool in evaluating IMI. A5.2.2 Shipboard internal electromagnetic environment (EME). For ship applications, electric fields (peak V/m-rms...effects waveform parameters ........................................ 9 MIL-STD-464A v CONTENTS Page TABLES 2B Electromagnetic fields from near...blasting of hardware. 3.8 Lightning indirect effects. Electrical transients induced by lightning due to coupling of electromagnetic fields . 3.9

Feasibilty analyses of electroepitaxial research and development accommodations. Volume 2: Electroepitaxial growth of GaAs

NASA Technical Reports Server (NTRS)

1982-01-01

The technique of electromigration, i.e., electric field induced forced convection, can be used to grow semiconductor material and other compounds from solution by passing electric current through the growth interface while the temperature of the system is maintained constant. Current controlled electromigration, referred to as electroepitaxy, was successfully applied to grow epitaxial layers of various semiconductors and garnets.

Electrical Breakdown Phenomena Involving Material Interfaces

DTIC Science & Technology

2013-06-01

create ozone through chemical reactions involving reactive species created by the electrical discharge [3]. The glow discharge breakdown in such...2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Investigation Of Pre-Ionization And Atmospheric Pulsed Discharge Plasma 5a...growth of the air discharge in the form of a conductive filament consisting of electrons and ions. This filament is created by temporal pulse that

Intrinsic Mechanisms of Multi-Layer Ceramic Capacitor Failure.

DTIC Science & Technology

1984-04-01

Properties on the Electric Transport in ABO Perovskites ", Phys. 3Stat. Sol. (a) 75, 143 (1983). [10] S. A. Long and R. N. Blumenthal, "Ti-Rich...Bauerle, "Influence Ed.), John Wiley and Sons (1981). of Bulk and Interface Properties on the Electric Transport in ABO Perovskites ", Phys. Stat. Sol...48 4. THERMOELECTRIC MEASUREMENTS ..... .............. .. 51 5. OTHER STUDIES ........ .................... 60 5.1 Impedance Dispersion

Developing hydropower in Washington state. Volume 2: An electricity marketing manual

NASA Astrophysics Data System (ADS)

James, J. W.; McCoy, G. A.

1982-03-01

An electricity marketing manual for the potential small and micro-hydroelectric project developer within the state of Washington is presented. Public utility regulatory policies (PURPA) requires electric utilities to interconnect with and pay a rate based on their full avoided costs for the purchase of electrical output from qualifying small power production facilities. The determination of avoided costs, as business organizational considerations, utility interface concerns, interconnection requirements, metering options, and liability and wheeling are discussed. The utility responses are summarized, legislation which is of importance to hydropower developers and the powers and functions of the authorities responsible for enforcing the mandate of PURPA are described.

Crystal orientation induced spin Rabi beat oscillations of point defects at the c-Si(111)/ SiO 2 interface

NASA Astrophysics Data System (ADS)

Paik, Seoyoung; Lee, Sang-Yun; Boehme, Christoph

2011-03-01

Spin-dependent electronic transitions such as certain charge carrier recombination and transport processes in semiconductors are usually governed by the Pauli blockade within pairs of two paramagnetic centers. One implication of this is that the manipulation of spin states, e.g. by magnetic resonant excitation, can produce changes to electric currents of the given semiconductor material. If both spins are changed at the same time, quantum beat effects such as beat oscillation between resonantly induced spin Rabi nutation becomes detectable through current measurements. Here, we report on electrically detected spin Rabi beat oscillation caused by pairs of 31 P donor states and Pb interface defects at the phosphorous doped Si(111)/ Si O2 interface. Due to the g-factor anisotropy of the Pb center we can tune the intra pair Larmor frequency difference (so called Larmor separation) through orientation of the sample with regard to the external magnetic field. As the Larmor separation governs the spin Rabi beat oscillation, we show experimentally how the crystal orientation can influence the beat effect.

Ultrahigh Energy Density in SrTiO3 Film Capacitors.

PubMed

Hou, Chuangming; Huang, Weichuan; Zhao, Wenbo; Zhang, Dalong; Yin, Yuewei; Li, Xiaoguang

2017-06-21

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Won Ja; Park, Kyungsu; Yu, Kyu-Sang

2015-10-07

Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si})more » complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.« less

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

NASA Astrophysics Data System (ADS)

Neugroschel, A.; Arienzo, M.; Isaac, R. D.; Komem, Y.

1985-04-01

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

Molecular aspects of the Eu3+/Eu2+ redox reaction at the interface between a molten salt and a metallic electrode

NASA Astrophysics Data System (ADS)

Pounds, Michael A.; Salanne, Mathieu; Madden, Paul A.

2015-09-01

We perform molecular dynamics simulations of a system consisting of Eu3+ and Eu2+ species dissolved in a high-temperature KCl electrolyte between two metallic electrodes. The interaction potential includes ion polarisation effects, and a constant electric potential is maintained within the electrodes by allowing the atomic charges to fluctuate in response to the environment. This setup allows us to study the electrochemical Eu3+/Eu2+ reaction in the framework of Marcus theory. Numerous studies have pointed to the highly structured nature of ionic liquids and molten salts close to solid surfaces which is not accounted for in the conventional mean-field description of this interface that underpins the theories of electrochemical reaction rates. Here we examine the influence on the kinetics of the charge-transfer event of the electrical potential across the electrode-electrolyte interface and on the effect of the presence of charged surface on the coordination structure and energetics of the ions in the region important for the charge-transfer event.

Electrical and optical properties of diketopyrrolopyrrole-based copolymer interfaces in thin film devices.

PubMed

Adil, Danish; Kanimozhi, Catherine; Ukah, Ndubuisi; Paudel, Keshab; Patil, Satish; Guha, Suchi

2011-05-01

Two donor-acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 × 10(12) eV⁻¹ cm⁻² in TDPP-BBT and 3.5 × 10¹² eV⁻¹ cm⁻² in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10⁻³ cm²/(Vs). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Effect of temperature on compact layer of Pt electrode in PEMFCs by first-principles molecular dynamics calculations

NASA Astrophysics Data System (ADS)

He, Yang; Chen, Changfeng; Yu, Haobo; Lu, Guiwu

2017-01-01

Formation of the double-layer electric field and capacitance of the water-metal interface is of significant interest in physicochemical processes. In this study, we perform first- principles molecular dynamics simulations on the water/Pt(111) interface to investigate the temperature dependence of the compact layer electric field and capacitance based on the calculated charge densities. On the Pt (111) surface, water molecules form ice-like structures that exhibit more disorder along the height direction with increasing temperature. The Osbnd H bonds of more water molecules point toward the Pt surface to form Ptsbnd H covalent bonds with increasing temperature, which weaken the corresponding Osbnd H bonds. In addition, our calculated capacitance at 300 K is 15.2 mF/cm2, which is in good agreement with the experimental results. As the temperature increases from 10 to 450 K, the field strength and capacitance of the compact layer on Pt (111) first increase and then decrease slightly, which is significant for understanding the water/Pt interface from atomic level.

Review on charge transfer and chemical activity of TiO2: Mechanism and applications

NASA Astrophysics Data System (ADS)

Cai, Yongqing; Feng, Yuan Ping

2016-12-01

Charge separation and transfer at the interface between two materials play a significant role in various atomic-scale processes and energy conversion systems. In this review, we present the mechanism and outcome of charge transfer in TiO2, which is extensively explored for photocatalytic applications in the field of environmental science. We list several experimental and computational methods to estimate the amount of charge transfer. The effects of the work function, defects and doping, and employment of external electric field on modulating the charge transfer are presented. The interplay between the band bending and carrier transport across the surface and interface consisting of TiO2 is discussed. We show that the charge transfer can also strongly affect the behavior of deposited nanoparticles on TiO2 through built-in electric field that it creates. This review encompasses several advances of composite materials where TiO2 is combined with two-dimensional materials like graphene, MoS2, phosphorene, etc. The charge transport in the TiO2-organohalide perovskite with respect to the electron-hole separation at the interface is also discussed.

Electron kinetics at the plasma interface

NASA Astrophysics Data System (ADS)

Bronold, Franz Xaver; Fehske, Holger; Pamperin, Mathias; Thiessen, Elena

2018-05-01

The most fundamental response of an ionized gas to a macroscopic object is the formation of the plasma sheath. It is an electron depleted space charge region, adjacent to the object, which screens the object's negative charge arising from the accumulation of electrons from the plasma. The plasma sheath is thus the positively charged part of an electric double layer whose negatively charged part is inside the wall. In the course of the Transregional Collaborative Research Center SFB/TRR24 we investigated, from a microscopic point of view, the elementary charge transfer processes responsible for the electric double layer at a floating plasma-wall interface and made first steps towards a description of the negative part of the layer inside the wall. Below we review our work in a colloquial manner, describe possible extensions, and identify key issues which need to be resolved to make further progress in the understanding of the electron kinetics across plasma-wall interfaces. Contribution to the Topical Issue "Fundamentals of Complex Plasmas", edited by Jürgen Meichsner, Michael Bonitz, Holger Fehske, Alexander Piel.

Space processing applications payload equipment study. Volume 2B: Payload interface analysis (power/thermal/electromagnetic compatibility)

NASA Technical Reports Server (NTRS)

Hammel, R. L. (Editor); Smith, A. G. (Editor)

1974-01-01

As a part of the task of performing preliminary engineering analysis of modular payload subelement/host vehicle interfaces, a subsystem interface analysis was performed to establish the integrity of the modular approach to the equipment design and integration. Salient areas that were selected for analysis were power and power conditioning, heat rejection and electromagnetic capability (EMC). The equipment and load profiles for twelve representative experiments were identified. Two of the twelve experiments were chosen as being representative of the group and have been described in greater detail to illustrate the evaluations used in the analysis. The shuttle orbiter will provide electrical power from its three fuel cells in support of the orbiter and the Spacelab operations. One of the three shuttle orbiter fuel cells will be dedicated to the Spacelab electrical power requirements during normal shuttle operation. This power supplies the Spacelab subsystems and the excess will be available to the payload. The current Spacelab sybsystem requirements result in a payload allocation of 4.0 to 4.8 kW average (24 hour/day) and 9.0 kW peak for 15 minutes.

Applicability of Donnan equilibrium theory at nanochannel-reservoir interfaces.

PubMed

Tian, Huanhuan; Zhang, Li; Wang, Moran

2015-08-15

Understanding ionic transport in nanochannels has attracted broad attention from various areas in energy and environmental fields. In most pervious research, Donnan equilibrium has been applied widely to nanofluidic systems to obtain ionic concentration and electrical potential at channel-reservoir interfaces; however, as well known that Donnan equilibrium is derived from classical thermodynamic theories with equilibrium assumptions. Therefore the applicability of the Donnan equilibrium may be questionable when the transport at nanochannel-reservoir interface is strongly non-equilibrium. In this work, the Poisson-Nernst-Planck model for ion transport is numerically solved to obtain the exact distributions of ionic concentration and electrical potential. The numerical results are quantitatively compared with the Donnan equilibrium predictions. The applicability of Donnan equilibrium is therefore justified by changing channel length, reservoir ionic concentration, surface charge density and channel height. The results indicate that the Donnan equilibrium is not applicable for short nanochannels, large concentration difference and wide openings. A non-dimensional parameter, Q factor, is proposed to measure the non-equilibrium extent and the relation between Q and the working conditions is studied in detail. Copyright © 2015 Elsevier Inc. All rights reserved.

Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio

2016-11-21

We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm frommore » the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.« less

Effect of interface structure regulation caused by variation of imidization rate on conduction current characteristics of PI/nano-Al2O3 three-layer composite films

NASA Astrophysics Data System (ADS)

Ma, Xinyu; Liu, Lizhu; Zhang, Xiaorui; He, Hongju

2018-06-01

A series of sandwich structure PI films were prepared by different imidization process, with pure PI film as the interlayer and PI/Al2O3 composite films as outer layers. The imidization rate of the film with different cured processes was calculated by characterizing by infrared spectrum (FT-IR), and the morphology of interlayer interface with different imidization rates by scanning electron microscope (SEM). When the imidization conditions of the first and second films were 260 °C/120 min, the composite films displayed better interface structure and higher imidization rate (ID) than others. Moreover, results also showed that the conduction current of three-layer composite film steadily improved with increased ID and temperature, and was higher than that of the pure film. At the temperature of 30 °C, the electrical aging threshold at different ID was obtained. When the ID reached the maximum value of 78.9%, the electrical aging threshold reached the maximum 41.69 kV/mm.

Symmetric and asymmetric exchange stiffnesses of transition-metal thin film interfaces in external electric field

NASA Astrophysics Data System (ADS)

Nakamura, K.; Pradipto, A.-M.; Akiyama, T.; Ito, T.; Oguchi, T.; Weinert, M.

2018-07-01

The electric-field induced modifications of the symmetric and asymmetric exchange stiffness constants for the prototypical transition-metal system of a Co monolayer on Pt(111) are determined from first-principles calculated total energy differences of spin-spiral states with oppositely rotating magnetizations in the presence of both the external field and spin-orbit coupling. The trend underlying the modifications is shown to be linked to orbital magnetism. The results demonstrate that an electric field may be a promising approach to manipulate macroscopically magnetic textures.

Insights into electrochemical reactions from ambient pressure photoelectron spectroscopy.

PubMed

Stoerzinger, Kelsey A; Hong, Wesley T; Crumlin, Ethan J; Bluhm, Hendrik; Shao-Horn, Yang

2015-11-17

The understanding of fundamental processes in the bulk and at the interfaces of electrochemical devices is a prerequisite for the development of new technologies with higher efficiency and improved performance. One energy storage scheme of great interest is splitting water to form hydrogen and oxygen gas and converting back to electrical energy by their subsequent recombination with only water as a byproduct. However, kinetic limitations to the rate of oxygen-based electrochemical reactions hamper the efficiency in technologies such as solar fuels, fuel cells, and electrolyzers. For these reactions, the use of metal oxides as electrocatalysts is prevalent due to their stability, low cost, and ability to store oxygen within the lattice. However, due to the inherently convoluted nature of electrochemical and chemical processes in electrochemical systems, it is difficult to isolate and study individual electrochemical processes in a complex system. Therefore, in situ characterization tools are required for observing related physical and chemical processes directly at the places where and while they occur and can help elucidate the mechanisms of charge separation and charge transfer at electrochemical interfaces. X-ray photoelectron spectroscopy (XPS), also known as ESCA (electron spectroscopy for chemical analysis), has been used as a quantitative spectroscopic technique that measures the elemental composition, as well as chemical and electronic state of a material. Building from extensive ex situ characterization of electrochemical systems, initial in situ studies were conducted at or near ultrahigh vacuum (UHV) conditions (≤10(-6) Torr) to probe solid-state electrochemical systems. However, through the integration of differential-pumping stages, XPS can now operate at pressures in the torr range, comprising a technique called ambient pressure XPS (AP-XPS). In this Account, we briefly review the working principles and current status of AP-XPS. We use several recent in situ studies on model electrochemical components as well as operando studies performed by our groups at the Advanced Light Source (ALS) at Lawrence Berkeley National Laboratory to illustrate that AP-XPS is both a chemically and an electrically specific tool since photoelectrons carry information on both the local chemistry and electrical potentials. The applications of AP-XPS to oxygen electrocatalysis shown in this Account span well-defined studies of (1) the oxide/oxygen gas interface, (2) the oxide/water vapor interface, and (3) operando measurements of half and full electrochemical cells. Using specially designed model devices, we can expose and isolate the electrode or interface of interest to the incident X-ray beam and AP-XPS analyzer to relate the electrical potentials to the composition/chemical state of the key components and interfaces. We conclude with an outlook on new developments of AP-XPS end stations, which may provide significant improvement in the observation of dynamics over a wide range of time scales, higher spatial resolution, and improved characterization of boundary or interface layers (solid/solid and liquid/solid).

First-Principles Molecular Dynamics Study on the Electric-double layer Capacitance of Water-MXene interfaces

NASA Astrophysics Data System (ADS)

Ando, Yasunobu; Otani, Minoru

MXenes are a new, large family of layered materials synthesized from MAX phases by simple chemical treatments. Due to their enormous variations, MXenes have attracted great attention as promising candidates as anode materials for next-generation secondary batteries. Unfortunately, the specific capacitance of MXenes supercapacitors is lower than that of active-carbon ones. Theoretical investigation of the electric-double layer (EDL) at electrode interfaces is necessary to improve their capacitance. First-principles molecular dynamics (FPMD) simulation based on the density functional theory (DFT) is performed to estimate the EDL capacitance from a potential profile V(z) and a charge distribution q(z) induced by the ions at water-Ti2CTx (T =O, F) interfaces. Potential profiles V(z) of both Ti2CO2 and Ti2CF2 decrease about 1.0 eV steeply in a region of only 3 Å from a Ti layer, which is the same profile at the platinum interfaces. On the other hand, induced charge distribution q(z) depends on the species of surface termination. Induced electrons are introduced at Ti layers in the case of O surface termination. However, Ti2CF2 is not capable to store electrons at Ti layers because it is mono-valence anions. It indicates that effective surface-position of MXenes depends on the surface terminations. Our results are revealed that small induced charge leads the low EDL capacitance at MXene interfaces. This is because interface polarization due to strong interaction between water and Ti2CTx induces net charge. The surface net charge hinders the introduction of ion-induced charges.

14 CFR 417.409 - System hazard controls.

Code of Federal Regulations, 2012 CFR

2012-01-01

... hazard as identified by the ground safety analysis and satisfy the requirements of this section. A launch... electrical power and signal circuits that interface with hazardous subsystems. (e) Propulsion systems. A...

14 CFR 417.409 - System hazard controls.

Code of Federal Regulations, 2013 CFR

2013-01-01

... hazard as identified by the ground safety analysis and satisfy the requirements of this section. A launch... electrical power and signal circuits that interface with hazardous subsystems. (e) Propulsion systems. A...

14 CFR 417.409 - System hazard controls.

Code of Federal Regulations, 2014 CFR

2014-01-01

... hazard as identified by the ground safety analysis and satisfy the requirements of this section. A launch... electrical power and signal circuits that interface with hazardous subsystems. (e) Propulsion systems. A...

14 CFR 417.409 - System hazard controls.

Code of Federal Regulations, 2011 CFR

2011-01-01

... hazard as identified by the ground safety analysis and satisfy the requirements of this section. A launch... electrical power and signal circuits that interface with hazardous subsystems. (e) Propulsion systems. A...

Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

NASA Astrophysics Data System (ADS)

Demirezen, S.; Kaya, A.; Yerişkin, S. A.; Balbaşı, M.; Uslu, İ.

In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε‧, ε‧, tanδ, electric modulus (M‧ and M″) and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε‧, ε‧, tanδ, M‧, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε‧, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε‧ and ε″ values at low frequencies may be attributed to the Maxwell-Wagner and space charge polarization. The high values of ε‧ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M‧ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M‧ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε‧, ε″, tanδ, M‧, M″ and ac electric conductivity (σac) is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization.

Autonomous power expert system

NASA Technical Reports Server (NTRS)

Walters, Jerry L.; Petrik, Edward J.; Roth, Mary Ellen; Truong, Long Van; Quinn, Todd; Krawczonek, Walter M.

1990-01-01

The Autonomous Power Expert (APEX) system was designed to monitor and diagnose fault conditions that occur within the Space Station Freedom Electrical Power System (SSF/EPS) Testbed. APEX is designed to interface with SSF/EPS testbed power management controllers to provide enhanced autonomous operation and control capability. The APEX architecture consists of three components: (1) a rule-based expert system, (2) a testbed data acquisition interface, and (3) a power scheduler interface. Fault detection, fault isolation, justification of probable causes, recommended actions, and incipient fault analysis are the main functions of the expert system component. The data acquisition component requests and receives pertinent parametric values from the EPS testbed and asserts the values into a knowledge base. Power load profile information is obtained from a remote scheduler through the power scheduler interface component. The current APEX design and development work is discussed. Operation and use of APEX by way of the user interface screens is also covered.

Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

PubMed

Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

2011-11-09

Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chan, Silvia H.; Bisi, Davide; Tahhan, Maher; Gupta, Chirag; DenBaars, Steven P.; Keller, Stacia; Zanoni, Enrico; Mishra, Umesh K.

2018-04-01

Al2O3/n-GaN MOS-capacitors grown by metalorganic chemical vapor deposition with in-situ- and ex-situ-formed Al2O3/GaN interfaces were characterized. Capacitors grown entirely in situ exhibited ˜4 × 1012 cm-2 fewer positive fixed charges and up to ˜1 × 1013 cm-2 eV-1 lower interface-state density near the band-edge than did capacitors with ex situ oxides. When in situ Al2O3/GaN interfaces were reformed via the insertion of a 10-nm-thick GaN layer, devices exhibited behavior between the in situ and ex situ limits. These results illustrate the extent to which an in-situ-formed dielectric/GaN gate stack improves the interface quality and breakdown performance.

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

NASA Astrophysics Data System (ADS)

Wu, Dongxue; Ma, Ping; Liu, Boting; Zhang, Shuo; Wang, Junxi; Li, Jinmin

2016-05-01

GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patterns to obtain two different GaN/substrate interfaces. The optoelectronic characteristics of FC-LED chips with different GaN/sapphire interfaces are studied. The FC-LED with an antireflective interface layer consisting of a NPSS with GaN in the pattern spacings demonstrates better optical properties than the FC-LED with an interface embedded with air voids. Our study indicates that the two types of FC-LEDs grown on NPSS show higher crystal quality and improved electrical and optical characteristics compared with those of FC-LEDs grown on conventional planar sapphire substrates.

Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

DOE PAGES

Kalugin, Nikolai G.; Jing, Lei; Morell, Eric Suarez; ...

2016-10-24

Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localizedmore » electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.« less

Interfacial behavior of confined mesogens at smectic-C*-water boundary.

PubMed

Chandran, Achu; Khanna, P K; Haranath, D; Biradar, Ashok M

2018-02-01

In this paper, we have investigated the behavior of mesogens at smectic-C*-water interface confined in a liquid crystal (LC) cell with interfacial geometry. Polarized optical microscopy was used to probe the appearance of various smectic-C* domain patterns at water interface owing to the reorientation of mesogens. The undulated stripe domains observed at the air interface of smectic-C* meniscus vanished as the water entered into the smectic layers and focal conical domain patterns appeared at smectic-C*-water boundary. A spatially variable electro-optical switching of LC molecules was also observed outside the electrode area of the interfacial cell. The electrode region at the interface, as well as on the water side, was damaged upon application of an electric field of magnitude more than 150 kV/m. The change in dielectric parameters of mesogens was extensively studied at interface after evaporating the water. These studies give fundamental insights into smectic-C*-water interface and also will be helpful in fabricating better LC devices for electro-optical and sensing applications.

Molecular dynamics study of structure and vibrational spectra at zwitterionoic lipid/aqueous KCl, NaCl, and CaCl2 solution interfaces

NASA Astrophysics Data System (ADS)

Ishiyama, Tatsuya; Shirai, Shinnosuke; Okumura, Tomoaki; Morita, Akihiro

2018-06-01

Molecular dynamics (MD) simulations of KCl, NaCl, and CaCl2 solution/dipalmytoylphosphatidylcholine lipid interfaces were performed to analyze heterodyne-detected vibrational sum frequency generation (HD-VSFG) spectra in relation to the interfacial water structure. The present MD simulation well reproduces the experimental spectra and elucidates a specific cation effect on the interfacial structure. The K+, Na+, and Ca2+ cation species penetrate in the lipid layer more than the anions in this order, due to the electrostatic interaction with negative polar groups of lipid, and the electric double layer between the cations and anions cancels the intrinsic orientation of water at the water/lipid interface. These mechanisms explain the HD-VSFG spectrum of the water/lipid interface and its spectral perturbation by adding the ions. The lipid monolayer reverses the order of surface preference of the cations at the solution/lipid interface from that at the solution/air interface.

Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalugin, Nikolai G.; Jing, Lei; Morell, Eric Suarez

Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localizedmore » electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.« less

Interfacial behavior of confined mesogens at smectic-C*-water boundary

NASA Astrophysics Data System (ADS)

Chandran, Achu; Khanna, P. K.; Haranath, D.; Biradar, Ashok M.

2018-02-01

In this paper, we have investigated the behavior of mesogens at smectic-C*-water interface confined in a liquid crystal (LC) cell with interfacial geometry. Polarized optical microscopy was used to probe the appearance of various smectic-C* domain patterns at water interface owing to the reorientation of mesogens. The undulated stripe domains observed at the air interface of smectic-C* meniscus vanished as the water entered into the smectic layers and focal conical domain patterns appeared at smectic-C*-water boundary. A spatially variable electro-optical switching of LC molecules was also observed outside the electrode area of the interfacial cell. The electrode region at the interface, as well as on the water side, was damaged upon application of an electric field of magnitude more than 150 kV/m. The change in dielectric parameters of mesogens was extensively studied at interface after evaporating the water. These studies give fundamental insights into smectic-C*-water interface and also will be helpful in fabricating better LC devices for electro-optical and sensing applications.

2DEGs at Perovskite Interfaces between KTaO3 or KNbO3 and Stannates

PubMed Central

Fan, Xiaofeng; Zheng, Weitao; Chen, Xin; Singh, David J.

2014-01-01

We report density functional studies of electron rich interfaces between KTaO3 or KNbO3 and CaSnO3 or ZnSnO3 and in particular the nature of the interfacial electron gasses that can be formed. We find that depending on the details these may occur on either the transition metal or stannate sides of the interface and in the later case can be shifted away from the interface by ferroelectricity. We also present calculations for bulk KNbO3, KTaO3, CaSnO3, BaSnO3 and ZnSnO3, showing the different transport and optical properties that may be expected on the two sides of such interfaces. The results suggest that these interfaces may display a wide range of behaviors depending on conditions, and in particular the interplay with ferroelectricity suggests that electrical control of these properties may be possible. PMID:24626191

From Relational Interfaces to Assume-Guarantee Contracts

DTIC Science & Technology

2014-03-18

Electrical Engineering and Computer Sciences University of California at Berkeley Technical Report No. UCB/EECS-2014-21 http://www.eecs.berkeley.edu/Pubs...5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) University of California at Berkeley, Electrical Engineering...design,” in EMSOFT’01. Springer, LNCS 2211, 2001. [2] A. Sangiovanni-Vincentelli et al., “Taming Dr. Frankenstein : Contract-Based Design for Cyber

10 CFR Appendix A1 to Subpart B of... - Uniform Test Method for Measuring the Energy Consumption of Electric Refrigerators and Electric...

Code of Federal Regulations, 2012 CFR

2012-01-01

... less for the freezing and storage of ice. 1.3“Anti-sweat heater” means a device incorporated into the... interior surfaces of the cabinet. 1.4“Anti-sweat heater switch” means a user-controllable switch or user interface which modifies the activation or control of anti-sweat heaters. 1.5“Automatic defrost” means a...

10 CFR Appendix A to Subpart B of... - Uniform Test Method for Measuring the Energy Consumption of Electric Refrigerators and Electric...

Code of Federal Regulations, 2012 CFR

2012-01-01

... capacity (14.2 liters) or less for the freezing and storage of ice. 1.3“Anti-sweat heater” means a device... on the exterior or interior surfaces of the cabinet. 1.4“Anti-sweat heater switch” means a user-controllable switch or user interface which modifies the activation or control of anti-sweat heaters. 1.5...

10 CFR Appendix A to Subpart B of... - Uniform Test Method for Measuring the Energy Consumption of Electric Refrigerators and Electric...

Code of Federal Regulations, 2014 CFR

2014-01-01

... capacity (14.2 liters) or less for the freezing and storage of ice. 1.3 “Anti-sweat heater” means a device... on the exterior or interior surfaces of the cabinet. 1.4 “Anti-sweat heater switch” means a user-controllable switch or user interface which modifies the activation or control of anti-sweat heaters. 1.5...

10 CFR Appendix A1 to Subpart B of... - Uniform Test Method for Measuring the Energy Consumption of Electric Refrigerators and Electric...

Code of Federal Regulations, 2014 CFR

2014-01-01

... less for the freezing and storage of ice. 1.3 “Anti-sweat heater” means a device incorporated into the... interior surfaces of the cabinet. 1.4 “Anti-sweat heater switch” means a user-controllable switch or user interface which modifies the activation or control of anti-sweat heaters. 1.5 “Automatic defrost” means a...