Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Method and system for a gas tube-based current source high voltage direct current transmission system

DOEpatents

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

A fully electric field driven scalable magnetoelectric switching element

NASA Astrophysics Data System (ADS)

Ahmed, R.; Victora, R. H.

2018-04-01

A technique for micromagnetic simulation of the magnetoelectric (ME) effect in Cr2O3 based structures has been developed. It has been observed that the microscopic ME susceptibility differs significantly from the experimentally measured values. The deviation between the two susceptibilities becomes more prominent near the Curie temperature, affecting the operation of the device at room temperature. A fully electric field controlled ME switching element has been proposed for use at technologically interesting densities: it employs quantum mechanical exchange at the boundaries instead of the applied magnetic field needed in traditional switching schemes. After establishing temperature dependent physics-based parameters, switching performances have been studied for different temperatures, applied electric fields, and Cr2O3 cross-sections. It has been found that our proposed use of quantum mechanical exchange favors reduced electric field operation and enhanced scalability while retaining reliable thermal stability.

Main electrical switch banks, plant switch house, looking to the ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Main electrical switch banks, plant switch house, looking to the North - Bureau of Mines Metallurgical Research Laboratory, Original Building, Date Street north of U.S. Highway 93, Boulder City, Clark County, NV

Harnessing the polariton drag effect to design an electrically controlled optical switch.

PubMed

Berman, Oleg L; Kezerashvili, Roman Ya; Kolmakov, German V

2014-10-28

We propose a design of a Y-shaped electrically controlled optical switch based on the studies of propagation of an exciton-polariton condensate in a patterned optical microcavity with an embedded quantum well. The polaritons are driven by a time-independent force due to the microcavity wedge shape and by a time-dependent drag force owing to the interaction of excitons in a quantum well and the electric current running in a neighboring quantum well. It is demonstrated that by applying the drag force one can direct more than 90% of the polariton flow toward the desired branch of the switch with no hysteresis. By considering the transient dynamics of the polariton condensate, we estimate the response speed of the switch as 9.1 GHz. We also propose a design of the polariton switch in a flat microcavity based on the geometrically identical Y-shaped quantum wells where the polariton flow is only induced by the drag force. The latter setup enables one to design a multiway switch that can act as an electrically controlled optical transistor with on and off functions. Finally, we performed the simulations for a microcavity with an embedded gapped graphene layer and demonstrated that in this case the response speed of the switch can be increased up to 14 GHz for the same switch size. The simulations also show that the energy gap in the quasiparticle spectrum in graphene can be utilized as an additional parameter that controls the propagation of the signals in the switch.

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2002-01-01

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Demonstration of 720×720 optical fast circuit switch for intra-datacenter networks

NASA Astrophysics Data System (ADS)

Ueda, Koh; Mori, Yojiro; Hasegawa, Hiroshi; Matsuura, Hiroyuki; Ishii, Kiyo; Kuwatsuka, Haruhiko; Namiki, Shu; Sato, Ken-ichi

2016-03-01

Intra-datacenter traffic is growing more than 20% a year. In typical datacenters, many racks/pods including servers are interconnected via multi-tier electrical switches. The electrical switches necessitate power-consuming optical-to- electrical (OE) and electrical-to-optical (EO) conversion, the power consumption of which increases with traffic. To overcome this problem, optical switches that eliminate costly OE and EO conversion and enable low power consumption switching are being investigated. There are two major requirements for the optical switch. First, it must have a high port count to construct reduced tier intra-datacenter networks. Second, switching speed must be short enough that most of the traffic load can be offloaded from electrical switches. Among various optical switches, we focus on those based on arrayed-waveguide gratings (AWGs), since the AWG is a passive device with minimal power consumption. We previously proposed a high-port-count optical switch architecture that utilizes tunable lasers, route-and-combine switches, and wavelength-routing switches comprised of couplers, erbium-doped fiber amplifiers (EDFAs), and AWGs. We employed conventional external cavity lasers whose wavelength-tuning speed was slower than 100 ms. In this paper, we demonstrate a large-scale optical switch that offers fast wavelength routing. We construct a 720×720 optical switch using recently developed lasers whose wavelength-tuning period is below 460 μs. We evaluate the switching time via bit-error-ratio measurements and achieve 470-μs switching time (includes 10-μs guard time to handle EDFA surge). To best of our knowledge, this is the first demonstration of such a large-scale optical switch with practical switching time.

An energy-consistent fracture model for ferroelectrics

NASA Astrophysics Data System (ADS)

Miao, Hongchen; Li, Faxin

2017-02-01

The fracture behavior of ferroelectrics has been intensively studied in recent decades, though currently a widely accepted fracture mechanism is still lacking. In this work, enlightened by previous experimental observations that crack propagation in ferroelectrics is always accompanied by domain switching, we propose a micromechanical model in which both crack propagation and domain switching are controlled by energy-based criteria. Both electric energy and mechanical energy can induce domain switching, while only mechanical energy can drive crack propagation. Furthermore, constrained domain switching is considered in this model, leading to the gradient domain switching zone near the crack tip. Analysis results show that stress-induced ferroelastic switching always has a toughening effect as the mechanical energy release rate serves as the driving force for both fracture and domain switching. In comparison, the electric-field-induced switching may have either a toughening or detoughening effect. The proposed model can qualitatively agree with the existing experimental results.

Vehicle electrical system state controller

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissontz, Jay E.

A motor vehicle electrical power distribution system includes a plurality of distribution sub-systems, an electrical power storage sub-system and a plurality of switching devices for selective connection of elements of and loads on the power distribution system to the electrical power storage sub-system. A state transition initiator provides inputs to control system operation of switching devices to change the states of the power distribution system. The state transition initiator has a plurality of positions selection of which can initiate a state transition. The state transition initiator can emulate a four position rotary ignition switch. Fail safe power cutoff switches providemore » high voltage switching device protection.« less

Battery switch for downhole tools

DOEpatents

Boling, Brian E.

2010-02-23

An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

49 CFR 236.314 - Electric lock for hand-operated switch or derail.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Electric lock for hand-operated switch or derail...) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RULES, STANDARDS, AND INSTRUCTIONS GOVERNING..., AND APPLIANCES Interlocking Standards § 236.314 Electric lock for hand-operated switch or derail...

Electrically tunable spatially variable switching in ferroelectric liquid crystal/water system

NASA Astrophysics Data System (ADS)

Choudhary, A.; Coondoo, I.; Prakash, J.; Sreenivas, K.; Biradar, A. M.

2009-04-01

An unusual switching phenomenon in the region outside conducting patterned area in ferroelectric liquid crystal (FLC) containing about 1-2 wt % of water has been observed. The presence of water in the studied heterogeneous system was confirmed by Fourier transform infrared spectroscopy. The observed optical studies have been emphasized on the "spatially variable switching" phenomenon of the molecules in the nonconducting region of the cell. The observed phenomenon is due to diffusion of water between the smectic layers of the FLC and the interaction of the curved electric field lines with the FLC molecules in the nonconducting region.

Electrically tunable transport and resistive switching in doped Ca2RuO4

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

We study electronic transport properties of Cr doped (2.5%) Mott insulator Ca2RuO4 where electric fields were previously found to induce an insulator-to-metal switching with potential industrial applications. In our experiments we observe a continuous reduction in the resistivity of Ca2RuO4 as a function of increasing electrical bias followed by an abrupt switching at higher biases. Interestingly, the observed switching is non-destructive and requires opposite bias polarities to switch from high-to-low and low-to-high resistance states. Combination of 2-, 3-, and 4-probe measurements provide a means to shed light on the origin of the switching and distinguish between its bulk and interfacial contributions. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grants DMR-1600057, DMR-1265162, and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.

Exploring the energy landscape of resistive switching in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Williamson, Morgan; Shen, Shida; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2018-04-01

We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator S r3I r2O7 . The switching was previously associated with an electric-field-driven structural transition. Here we use time-resolved measurements to probe the thermal activation behavior of the switching process and acquire information about the energy barrier associated with the transition. We quantify the changes in the energy-barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition-metal oxides for spintronic applications.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

10. ELECTRICAL SWITCHING STATION FOR IRON MOUNTAIN BRINGS ELECTRICITY FROM ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

10. ELECTRICAL SWITCHING STATION FOR IRON MOUNTAIN BRINGS ELECTRICITY FROM HOOVER DAM COMPLEX. - Iron Mountain Pump Plant, South of Danby Lake, north of Routes 62 & 177 junction, Rice, San Bernardino County, CA

46 CFR 111.105-19 - Switches.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Switches. 111.105-19 Section 111.105-19 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Hazardous Locations § 111.105-19 Switches. A switch that is explosionproof or flameproof, or that...

46 CFR 111.105-19 - Switches.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Switches. 111.105-19 Section 111.105-19 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Hazardous Locations § 111.105-19 Switches. A switch that is explosionproof or flameproof, or that...

46 CFR 111.105-19 - Switches.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Switches. 111.105-19 Section 111.105-19 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Hazardous Locations § 111.105-19 Switches. A switch that is explosionproof or flameproof, or that...

46 CFR 111.105-19 - Switches.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Switches. 111.105-19 Section 111.105-19 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Hazardous Locations § 111.105-19 Switches. A switch that is explosionproof or flameproof, or that...

76 FR 72026 - Buy America Waiver Notification

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-21

... regarding the FHWA's finding that a Buy America waiver is appropriate for an automated battery switching mechanism for an electric battery switching station in the State of California. DATES: The effective date of... automated battery switching mechanism for an electric battery switching station in California. In accordance...

Energy Switching Threshold for Climatic Benefits

NASA Astrophysics Data System (ADS)

Zhang, X.; Cao, L.; Caldeira, K.

2013-12-01

Climate change is one of the great challenges facing humanity currently and in the future. Its most severe impacts may still be avoided if efforts are made to transform current energy systems (1). A transition from the global system of high Greenhouse Gas (GHG) emission electricity generation to low GHG emission energy technologies is required to mitigate climate change (2). Natural gas is increasingly seen as a choice for transitions to renewable sources. However, recent researches in energy and climate puzzled about the climate implications of relying more energy on natural gas. On one hand, a shift to natural gas is promoted as climate mitigation because it has lower carbon per unit energy than coal (3). On the other hand, the effect of switching to natural gas on nuclear-power and other renewable energies development may offset benefits from fuel-switching (4). Cheap natural gas is causing both coal plants and nuclear plants to close in the US. The objective of this study is to measure and evaluate the threshold of energy switching for climatic benefits. We hypothesized that the threshold ratio of energy switching for climatic benefits is related to GHGs emission factors of energy technologies, but the relation is not linear. A model was developed to study the fuel switching threshold for greenhouse gas emission reduction, and transition from coal and nuclear electricity generation to natural gas electricity generation was analyzed as a case study. The results showed that: (i) the threshold ratio of multi-energy switching for climatic benefits changes with GHGs emission factors of energy technologies. (ii)The mathematical relation between the threshold ratio of energy switching and GHGs emission factors of energies is a curved surface function. (iii) The analysis of energy switching threshold for climatic benefits can be used for energy and climate policy decision support.

Captured key electrical safety lockout system

DOEpatents

Darimont, Daniel E.

1995-01-01

A safety lockout apparatus for an electrical circuit includes an electrical switch, a key, a lock and a blocking mechanism. The electrical switch is movable between an ON position at which the electrical circuit is energized and an OFF position at which the electrical circuit is deactivated. The lock is adapted to receive the key and is rotatable among a plurality of positions by the key. The key is only insertable and removable when the lock is at a preselected position. The lock is maintained in the preselected position when the key is removed from the lock. The blocking mechanism physically maintains the switch in its OFF position when the key is removed from the lock. The blocking mechanism preferably includes a member driven by the lock between a first position at which the electrical switch is movable between its ON and OFF positions and a second position at which the member physically maintains the electrical switch in its OFF position. Advantageously, the driven member's second position corresponds to the preselected position at which the key can be removed from and inserted into the lock.

Captured key electrical safety lockout system

DOEpatents

Darimont, D.E.

1995-10-31

A safety lockout apparatus for an electrical circuit includes an electrical switch, a key, a lock and a blocking mechanism. The electrical switch is movable between an ON position at which the electrical circuit is energized and an OFF position at which the electrical circuit is deactivated. The lock is adapted to receive the key and is rotatable among a plurality of positions by the key. The key is only insertable and removable when the lock is at a preselected position. The lock is maintained in the preselected position when the key is removed from the lock. The blocking mechanism physically maintains the switch in its OFF position when the key is removed from the lock. The blocking mechanism preferably includes a member driven by the lock between a first position at which the electrical switch is movable between its ON and OFF positions and a second position at which the member physically maintains the electrical switch in its OFF position. Advantageously, the driven member`s second position corresponds to the preselected position at which the key can be removed from and inserted into the lock. 7 figs.

Remote switch actuator

DOEpatents

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

14 CFR 27.1361 - Master switch.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Master switch. 27.1361 Section 27.1361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1361 Master switch. (a) There must be a master switch arrangement to allow ready disconnection of each electric power source...

14 CFR 27.1361 - Master switch.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Master switch. 27.1361 Section 27.1361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1361 Master switch. (a) There must be a master switch arrangement to allow ready disconnection of each electric power source...

14 CFR 27.1361 - Master switch.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Master switch. 27.1361 Section 27.1361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1361 Master switch. (a) There must be a master switch arrangement to allow ready disconnection of each electric power source...

14 CFR 27.1361 - Master switch.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Master switch. 27.1361 Section 27.1361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1361 Master switch. (a) There must be a master switch arrangement to allow ready disconnection of each electric power source...

14 CFR 27.1361 - Master switch.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Master switch. 27.1361 Section 27.1361... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1361 Master switch. (a) There must be a master switch arrangement to allow ready disconnection of each electric power source...

49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 9 2012-10-01 2012-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 9 2011-10-01 2011-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 9 2013-10-01 2013-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 9 2014-10-01 2014-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

NASA Astrophysics Data System (ADS)

Buragohain, P.; Richter, C.; Schenk, T.; Lu, H.; Mikolajick, T.; Schroeder, U.; Gruverman, A.

2018-05-01

Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Generation and the role of dislocations in single-crystalline phase-change In 2 Se 3 nanowires under electrical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mafi, Elham; Tao, Xin; Zhu, Wenguang

2016-07-08

Using single crystalline In2Se3 nanowires as a platform, we have studied the RESET switching (from low to high electrical resistance) in this phase-change material under electric pulses. Particularly, we correlated the atomic-scale structural evolutions with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with density functional theory calculations, we show that the immobile dislocations generated via vacancy condensations are responsible for the RESET switching and that the material maintains the single crystallinity during the process. This new mechanism is fundamentally different from the crystalline-amorphous transition,more » which is commonly understood as the underlying process for the RESET switching in similar phase-change materials.« less

Variable temperature performance of a fully screen printed transistor switch

NASA Astrophysics Data System (ADS)

Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

2016-12-01

This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Lateral excitonic switching in vertically stacked quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jarzynka, Jarosław R.; McDonald, Peter G.; Galbraith, Ian

2016-06-14

We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are alsomore » discussed.« less

The phenomenon of voltage controlled switching in disordered superconductors.

PubMed

Ghosh, Sanjib; De Munshi, D

2014-01-15

The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device.

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials

DOE PAGES

Zalden, Peter; Shu, Michael J.; Chen, Frank; ...

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4In 3Sb 67Te 26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of thresholdmore » switching and reveals potential applications as an ultrafast electronic switch.« less

Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

NASA Astrophysics Data System (ADS)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

Method and system for operating an electric motor

DOEpatents

Gallegos-Lopez, Gabriel; Hiti, Silva; Perisic, Milun

2013-01-22

Methods and systems for operating an electric motor having a plurality of windings with an inverter having a plurality of switches coupled to a voltage source are provided. A first plurality of switching vectors is applied to the plurality of switches. The first plurality of switching vectors includes a first ratio of first magnitude switching vectors to second magnitude switching vectors. A direct current (DC) current associated with the voltage source is monitored during the applying of the first plurality of switching vectors to the plurality of switches. A second ratio of the first magnitude switching vectors to the second magnitude switching vectors is selected based on the monitoring of the DC current associated with the voltage source. A second plurality of switching vectors is applied to the plurality of switches. The second plurality of switching vectors includes the second ratio of the first magnitude switching vectors to the second magnitude switching vectors.

Temperature-Dependent Electrical Conductivity of GeTe-Based RF Switches

DTIC Science & Technology

2015-03-31

Short, high temperature pulses result in a melt -quench cycle, amorphizing the GeTe and leaving the switch in the electrically insulating OFF state...Longer, lower temperature pulses result in the recrystallization of the GeTe, leaving the switch in the electrically conductive ON state. The...shown to vary only weakly with temperature. OFF-state S-parameters also exhibit slight temperature variation, with an inflection point of ~175

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

PubMed

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

Anisotropy of domain switching in prepoled lead titanate zirconate ceramics under multiaxial electrical loading

NASA Astrophysics Data System (ADS)

Liu, Yuan-Ming; Li, Fa-Xin; Fang, Dai-Ning

2007-01-01

The authors report an observation of anisotropic domain switching process in prepoled lead titanate zirconate (PZT) ceramics under multiaxial electrical loading. Prepoled PZT blocks were obliquely cut to apply an electric field at discrete angles θ (0°-180°) to the initial poling direction. Both the coercive field and switchable polarization are found to decrease significantly when sinθ increases from zero to unity. The measured strain curves show that most domains that accomplished 180° domain switching actually experienced two successive 90° switching. The oriented domain texture after poling plus the induced nonuniform stress are used to explain the observed domain switching anisotropy.

Concepts, characterization, and modeling of MEMS microswitches with gold contacts in MUMPs

NASA Astrophysics Data System (ADS)

Lafontan, Xavier; Dufaza, Christian; Robert, Michel; Pressecq, Francis; Perez, Guy

2001-04-01

This paper demonstrates that RF MEMS micro-switches can be realized with a low cost MEMS technology such as MUMPs. Two different switches are proposed, namely the hinged beam switch and the gold overflowing switch. Their concepts, design and characterization are described in details. On-resistance as low as 5 - 6 (Omega) for the gold overflowing switch and 2 - 3 (Omega) for the hinged beam switch have been measured. Finally, experimental measurements showed that force and electrical current had strong influences on the overall electrical contact.

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating

PubMed Central

Said, Asmaa; Salah, Abeer; Abdel Fattah, Gamal

2017-01-01

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin’s rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications. PMID:28772884

Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating.

PubMed

Said, Asmaa; Salah, Abeer; Fattah, Gamal Abdel

2017-05-12

Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin's rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications.

High-Frequency Switching Transients and Power Loss Estimation in Electric Drive Systems that Utilize Wide-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Fulani, Olatunji T.

Development of electric drive systems for transportation and industrial applications is rapidly seeing the use of wide-bandgap (WBG) based power semiconductor devices. These devices, such as SiC MOSFETs, enable high switching frequencies and are becoming the preferred choice in inverters because of their lower switching losses and higher allowable operating temperatures. Due to the much shorter turn-on and turn-off times and correspondingly larger output voltage edge rates, traditional models and methods previously used to estimate inverter and motor power losses, based upon a triangular power loss waveform, are no longer justifiable from a physical perspective. In this thesis, more appropriate models and a power loss calculation approach are described with the goal of more accurately estimating the power losses in WBG-based electric drive systems. Sine-triangle modulation with third harmonic injection is used to control the switching of the inverter. The motor and inverter models are implemented using Simulink and computer studies are shown illustrating the application of the new approach.

Ultrafast magnetization reversal by picosecond electrical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yang; Wilson, Richard B.; Gorchon, Jon

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electricalmore » switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.« less

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

Ultrafast magnetization reversal by picosecond electrical pulses

DOE PAGES

Yang, Yang; Wilson, Richard B.; Gorchon, Jon; ...

2017-11-03

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electricalmore » switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.« less

Fabricating and using a micromachined magnetostatic relay or switch

NASA Technical Reports Server (NTRS)

Tai, Yu-Chong (Inventor); Wright, John A. (Inventor)

2001-01-01

A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Comparative study of electrical and switch-skipping mechanical switch for self-powered SSHI in medium coupled piezoelectric vibration energy harvesters

NASA Astrophysics Data System (ADS)

Asanuma, H.; Sakamoto, K.; Komatsuzaki, T.; Iwata, Y.

2018-07-01

To increase output power for piezoelectric vibration energy harvesters, considerable attention has recently been focused on a self-powered synchronized switch harvesting on inductor (SSHI) technique employing an electrical and mechanical switch. However, there are two technical issues: in a medium or highly coupled harvester, the piezoelectric coupling force, which increases as the SSHI’s voltage increases, will reduce the harvester’s displacement and the resulting output power, and there are few reports comparing the performance of electrical switch SSHI (ESS) and mechanical switch SSHI (MSS) that include consideration of the piezoelectric coupling force. We developed a simulation technique that allows us to evaluate the output power considering the piezoelectric coupling force, and investigated the performance of stopper-based MSS and ESS, both numerically and experimentally. The numerical investigation predicted the following: (1) the output power for the ESS is lower than that for the MSS at acceleration lower than 3.5 m s‑2 and (2) intriguingly, the output power for the MSS continues to increase, whereas the peak–peak displacement remains constant. The experimental results showed behaviour similar to that of the numerical predictions. The results are attributed to the different switching strategies: the MSS turns on only when the harvester’s displacement exceeds the gap distance, while the ESS turns on at every maximum/minimum displacement.

Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

DOEpatents

Wilcox, R.B.

1991-09-10

A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

DOEpatents

Wilcox, Russell B.

1991-01-01

A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

[Intracranial pressure monitoring apparatus for clinical use balanced pressure sensors].

PubMed

Numoto, M

1976-04-01

Three types of pressure sensors, (1) electric pressure switch, (2) fiber optic pressure switch and (3) pressure indicating bag for intracranial pressure monitoring which were developed by the author are described. Advantages and disadvantages between them are also discussed. The electric pressure switch is relatively simple in construction but has a possibility of producing micro-shock hazard in case of accidental electric leakage. The fiber optic pressure switch is the safest for the micro shock but its structure is rather complicated and fragile. The pressure indicating bag is simple to make and durable to use. However, it has a hydrostatic effect.

Symmetry breaking and electrical frustration during tip-induced polarization switching in the non-polar cut of lithium niobate single crystals

DOE PAGES

Ievlev, Anton; Alikin, Denis O.; Morozovska, A. N.; ...

2014-12-15

Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching in the non-polar cuts of uniaxial ferroelectrics. In this case, in-plane component of polarization vector switches, allowing for detailed observations of resultant domain morphologies. We observe surprising variability of resultant domain morphologies stemming from fundamental instability of formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling vertical tip position allows the polarity of the switching to be controlled. This represents very unusual formmore » of symmetry breaking where mechanical motion in vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed.« less

46 CFR 160.115-7 - Design, construction, and performance of winches.

Code of Federal Regulations, 2013 CFR

2013-10-01

... materials. Provisions must also be made to prevent loosening or tightening resulting from differences of... which disconnects all electrical potential to the winch, must be provided. This switch must be located... switch will disconnect all electrical potential of the circuit in which the switches are connected; (B...

46 CFR 160.115-7 - Design, construction, and performance of winches.

Code of Federal Regulations, 2014 CFR

2014-10-01

... materials. Provisions must also be made to prevent loosening or tightening resulting from differences of... opening of which disconnects all electrical potential to the winch, must be provided. This switch must be... either switch will disconnect all electrical potential of the circuit in which the switches are connected...

46 CFR 111.40-11 - Numbered switching unit and panelboard directory.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Numbered switching unit and panelboard directory. 111.40-11 Section 111.40-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-11 Numbered switching unit and...

46 CFR 111.40-11 - Numbered switching unit and panelboard directory.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Numbered switching unit and panelboard directory. 111.40-11 Section 111.40-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-11 Numbered switching unit and...

46 CFR 111.40-11 - Numbered switching unit and panelboard directory.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Numbered switching unit and panelboard directory. 111.40-11 Section 111.40-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-11 Numbered switching unit and...

46 CFR 111.40-11 - Numbered switching unit and panelboard directory.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Numbered switching unit and panelboard directory. 111.40-11 Section 111.40-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-11 Numbered switching unit and...

46 CFR 111.40-11 - Numbered switching unit and panelboard directory.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Numbered switching unit and panelboard directory. 111.40-11 Section 111.40-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Panelboards § 111.40-11 Numbered switching unit and...

Optically activated switches for the generation of complex electrical waveforms with multigigahertz bandwidth

NASA Astrophysics Data System (ADS)

Skeldon, Mark D.; Okishev, Andrey V.; Letzring, Samuel A.; Donaldson, William R.; Green, Kenton; Seka, Wolf D.; Fuller, Lynn F.

1995-01-01

An electrical pulse-generation system using two optically activated Si photoconductive switches can generate shaped electrical pulses with multigigahertz bandwidth. The Si switches are activated by an optical pulse whose leading edge is steepened by stimulated Brillouin scattering (SBS) in CCl4. With the bandwidth generated by the SBS process, a laser having a 1- to 3-ns pulse width is used to generate electrical pulses with approximately 80-ps rise times (approximately 4-GHz bandwidth). Variable impedance microstrip lines are used to generate complex electrical waveforms that can be transferred to a matched load with minimal loss of bandwidth.

Single molecular orientation switching of an endohedral metallofullerene.

PubMed

Yasutake, Yuhsuke; Shi, Zujin; Okazaki, Toshiya; Shinohara, Hisanori; Majima, Yutaka

2005-06-01

The single molecular orientation switching of the Tb@C82 endohedral metallofullerene has been studied by using low-temperature ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). An octanethiol self-assembled monolayer (SAM) was introduced between Tb@C82 and the Au111 substrate to control the thermal rotational states of Tb@C82. Scanning tunneling spectroscopy (STS) of Tb@C82 on an octanethiol SAM at 13 K demonstrated hysteresis including negative differential conductance (NDC). This observed hysteresis and NDC is interpreted in terms of a switching of the Tb@C82 molecular orientation caused by the interaction between its electric dipole moment and an external electric field.

RF MEMS microswitches design and characterization

NASA Astrophysics Data System (ADS)

Lafontan, Xavier; Dufaza, Christian; Robert, Michel; Perez, Guy; Pressecq, Francis

2000-08-01

This paper presents the work performed in MUMPs on RF MEMS micro-switch. Concepts, design and characterization of switches are studied. The study particularly focuses on the electrical resistance characterization and modelization. The switches developed uses two different principle: overflowed gold and hinged beam. The realized contacts exhibited high on resistance (~20(Omega) ) due to nanoscopics asperities of contacts and insulating interfacial films. Results of a typical contact cleaning method are also presented.

Study of electrical conductivity and memory switching in the zinc-vanadium-phosphate glasses

NASA Astrophysics Data System (ADS)

Mirzayi, M.; Hekmatshoar, M. H.

2013-07-01

Vanadium zinc phosphate glasses were prepared by the conventional melt quenching technique and effect of V2O5 concentration on d.c. conductivity of prepared samples were investigated. X-ray diffraction patterns confirmed the glassy character of the samples. The d.c. conductivity increased with increase in V2O5 content. Results showed that activation energy has a single value in the investigated range of temperature, which can be explained in accordance with Mott small pollaron hopping model. I-V characteristics at high electric field showed that switching in these glasses was memory type. The threshold field of switching was found to decrease with increase in V2O5 content. Non-linear behavior and switching phenomenon was explained by Pool-Frenkel effect and thermal model.

REMOTE CONTROLLED SWITCHING DEVICE

DOEpatents

Hobbs, J.C.

1959-02-01

An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

Isolated and soft-switched power converter

DOEpatents

Peng, Fang Zheng; Adams, Donald Joe

2002-01-01

An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

Scalable, high-capacity optical switches for Internet routers and moving platforms

NASA Astrophysics Data System (ADS)

Joe, In-Sung

Internet traffic nearly doubles every year, and we need faster routers with higher ports count, yet lower electrical power consumption. Current internet routers use electrical switches that consume large amounts of electrical power to operate at high data rates. These internet routers dissipate ˜ 10kW per rack, and their capacity is limited by cooling constraints. The power consumption is also critical for moving platforms. As avionics advance, the demand for larger capacity networks increases. Optical fibers are already chosen for high speed data transmission in advanced aircraft. In optical communication systems, integrated passive optical components, such as Array Waveguide Gratings (AWGs), have provided larger capacity with lower power consumption, because minimal electrical power is required for their operation. In addition, compact, wavelength-tunable semiconductor lasers with wide tuning ranges that can switch their wavelengths in tens of nanoseconds have been demonstrated. Here we present a wavelength-selective optical packet switch based on Waveguide Grating Routers (WGRs), passive splitters, and combiners. Tunable lasers on the transmitter side are the only active switching elements. The WGR is operated on multiple Free Spectral Ranges (FSRs) to achieve increased port count and switching capacity while maintaining strict-sense, non-blocking operation. Switching times of less than 24ns between two wavelengths covering three FSRs is demonstrated experimentally. The electrical power consumption, size, weight, and cost of our optical switch is compared with those of conventional electrical switches, showing substantial improvements at large throughputs (˜2 Tb/s full duplex). A revised switch design that does not suffer optical loss from star couplers is proposed. This switch design uses only WGRs, and it is suitable for networks with stringent power budgets. The burst nature of the optical packet transmission requires clock recovery for every incoming packet, and conventional continuous-mode receivers are not suitable for this application. An Embedded Clock Transport (ECT) technique is adopted here. The ECT combines a clock tone with the data payload before the transmission. Simple band pass filtering can extract the transmitted clock tone, and low pass filtering can recover the data. Error-free transmissions at 2.488 Gb/s with ˜16 ns clock recovery time were demonstrated.

49 CFR 236.301 - Where signals shall be provided.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 236.301 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD... over a hand-operated switch into interlocking limits if the switch is provided with an electric lock..., electrically. Electric locks installed under this rule must conform to the time and approach locking...

43. BUILDING NO. 454, ORDNANCE FACILITY (BAG CHARGE FILLING PLANT), ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

43. BUILDING NO. 454, ORDNANCE FACILITY (BAG CHARGE FILLING PLANT), DETAIL OF EXPLOSION-PROOF ELECTRICAL SWITCH BOX (SWITCH GEAR INSIDE BOX SUBMERGED IN OIL TO QUENCH SPARKS), SWITCH EQUIPMENT MADE BY GENERAL ELECTRIC. - Picatinny Arsenal, 400 Area, Gun Bag Loading District, State Route 15 near I-80, Dover, Morris County, NJ

Simulation of switching overvoltages in the mine electric power supply system

NASA Astrophysics Data System (ADS)

Ivanchenko, D. I.; Novozhilov, N. G.

2017-02-01

Overvoltages occur in mine power supply systems during switching off consumers with high inductive load, such as transformers, reactors and electrical machines. Overvoltages lead to an increase of insulation degradation rate and may cause electric faults, power outage, fire and explosion of methane and coal dust. This paper is dedicated to simulation of vacuum circuit breaker switching overvoltages in a mine power supply system by means of Simulink MATLAB. The model of the vacuum circuit breaker implements simulation of transient recovery voltage, current chopping and an electric arc. Obtained results were compared to available experimental data.

Operations manual for the patient assist device. [to handle electrical appliances

NASA Technical Reports Server (NTRS)

Schrader, M. A.

1973-01-01

Quadriplegic patients and multiple amputee patients are almost totally dependent on nursing personnel for any activities or interests in which they participate. A patient assist device is reported which provides patient control over electrical devices in his environment. The patient operates three switches to acquire control over a desired electrical appliance. The type switches employed are chosen to conform to patient capabilities, even when such capabilities are as limited as eye or head movements. The switch operations are sensed and converted into command signals by the patient assist device to control ten electrical appliances simulataneously and independently.

Fast gray-to-gray switching of a hybrid-aligned liquid crystal cell

NASA Astrophysics Data System (ADS)

Choi, Tae-Hoon; Kim, Jung-Wook; Yoon, Tae-Hoon

2015-03-01

We demonstrate fast gray-to-gray (GTG) switching of a hybrid-aligned liquid crystal cell by applying both vertical and inplane electric fields to liquid crystals (LCs) using a four-terminal electrode structure. The LCs are switched to the bright state through downward tilting and twist deformation initiated by applying an in-plane electric field, whereas they are switched back to the initial dark state through optically hidden relaxation initiated by applying a vertical electric field for a short duration. The top electrode in the proposed device is grounded, which requires a much higher voltage to be applied for in-plane rotation of LCs. Thus, ultrafast turn-on switching of the device is achieved, whereas the turn-off switching of the proposed device is independent of the elastic constants and the viscosity of the LCs so that fast turn-off switching can be achieved. We experimentally obtained a total response time of 0.75 ms. Furthermore, fast GTG response within 3 ms could be achieved.

49 CFR 236.207 - Electric lock on hand-operated switch; control.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Electric lock on hand-operated switch; control...) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RULES, STANDARDS, AND INSTRUCTIONS GOVERNING..., AND APPLIANCES Automatic Block Signal Systems Standards § 236.207 Electric lock on hand-operated...

Electrical fatigue behaviour in lead zirconate titanate: an experimental and theoretical study

NASA Astrophysics Data System (ADS)

Bhattacharyya, Mainak; Arockiarajan, A.

2013-08-01

A systematic investigation on electrical fatigue in lead zirconate titanate (PZT) is carried out for different loading frequencies. Experiments are conducted up to 106 cycles to measure the electrical displacement and longitudinal strain on bulk ceramics in the bipolar mode with large electrical loading conditions. A simplified macroscopic model based on physical mechanisms of domain switching is developed to predict the non-linear behaviour. In this model, the volume fraction of a domain is used as the internal variable by considering the mechanisms of domain nucleation and propagation (domain wall movement). The measured material properties at different fatigue cycles are incorporated into the switching model as damage parameters and the classical strain versus electric field and electric displacement versus electric field curves are simulated. Comparison between the experiments and simulations shows that the proposed model can reproduce the characteristics of non-linear as well as fatigue responses.

49 CFR 236.207 - Electric lock on hand-operated switch; control.

Code of Federal Regulations, 2011 CFR

2011-10-01

... THE INSTALLATION, INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Automatic Block Signal Systems Standards § 236.207 Electric lock on hand-operated... 49 Transportation 4 2011-10-01 2011-10-01 false Electric lock on hand-operated switch; control...

Electrically controlled optical latch and switch requires less current

NASA Technical Reports Server (NTRS)

Pieczonka, W. A.; Roy, M. M.; Yeh, T. H.

1966-01-01

Electrically controlled optical latch consists of a sensitive phototransistor and a solid-state light source. This design requires less current to activate an optically activated switch than in prior art.

Current-level triggered plasma-opening switch

DOEpatents

Mendel, C.W.

1987-06-29

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

Current-level triggered plasma-opening switch

DOEpatents

Mendel, Clifford W.

1989-01-01

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

Statistical electric field and switching time distributions in PZT 1Nb2Sr ceramics: Crystal- and microstructure effects

NASA Astrophysics Data System (ADS)

Zhukov, Sergey; Kungl, Hans; Genenko, Yuri A.; von Seggern, Heinz

2014-01-01

Dispersive polarization response of ferroelectric PZT ceramics is analyzed assuming the inhomogeneous field mechanism of polarization switching. In terms of this model, the local polarization switching proceeds according to the Kolmogorov-Avrami-Ishibashi scenario with the switching time determined by the local electric field. As a result, the total polarization reversal is dominated by the statistical distribution of the local field magnitudes. Microscopic parameters of this model (the high-field switching time and the activation field) as well as the statistical field and consequent switching time distributions due to disorder at a mesoscopic scale can be directly determined from a set of experiments measuring the time dependence of the total polarization switching, when applying electric fields of different magnitudes. PZT 1Nb2Sr ceramics with Zr/Ti ratios 51.5/48.5, 52.25/47.75, and 60/40 with four different grain sizes each were analyzed following this approach. Pronounced differences of field and switching time distributions were found depending on the Zr/Ti ratios. Varying grain size also affects polarization reversal parameters, but in another way. The field distributions remain almost constant with grain size whereas switching times and activation field tend to decrease with increasing grain size. The quantitative changes of the latter parameters with grain size are very different depending on composition. The origin of the effects on the field and switching time distributions are related to differences in structural and microstructural characteristics of the materials and are discussed with respect to the hysteresis loops observed under bipolar electrical cycling.

Electrical switching studies on Si15Te85-xCux bulk (1 ≤ x ≤ 5) glasses

NASA Astrophysics Data System (ADS)

Roy, Diptoshi; Nadig, Chinmayi H. S.; Krishnan, Aravindh; Karanam, Akshath; Abhilash, R.; Jagannatha K., B.; Das, Chandasree

2018-05-01

Bulk ingots of Si15Te85-xCux (1 ≤ x ≤ 5) glasses are concocted by typical melt quenching technique. XRD validate the non-crystalline feature of the prepared quenched sample. The samples are found to display threshold type of electrical switching behavior. The switching behavior on all the samples is noticed without any disturbances. Compositional dependence of threshold voltage of Si15Te85-xCux (1 ≤ x ≤ 5) glasses has been studied and it has been found that VT increases as the atomic percentage of dopant (copper) increases in the host matrix. The distinguished behavior has been envisaged and correlated to the improvement in network connectivity and rigidity with the addition of Cu.

Miniature intermittent contact switch

NASA Technical Reports Server (NTRS)

Sword, A.

1972-01-01

Design of electric switch for providing intermittent contact is presented. Switch consists of flexible conductor surrounding, but separated from, fixed conductor. Flexing of outside conductor to contact fixed conductor completes circuit. Advantage is small size of switch compared to standard switches.

Spark gaps synchronization using electrical trigger pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ritu; Saroj, P.C.; Sharma, Archana

In pulse power systems, it is required to have synchronized triggering of two or more high voltage spark gaps capable of switching large currents, using electrical trigger pulses. This paper intends to study the synchronization of spark gaps using electrical trigger. The trigger generator consists of dc supply, IGBT switch and driver circuit which generates 8kV, 400ns (FWHM) pulses. The experiment was carried out using two 0.15uF/50kV energy storage capacitors charged to 12kV and discharged through stainless steel spark gaps of diameter 9 mm across 10 ohm non inductive load. The initial experiment shows that synchronization has been achieved withmore » jitter of 50 to 100ns. Further studies carried out to reduce the jitter time by varying various electrical parameters will be presented. (author)« less

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Vibration energy harvesting based on stress-induced polarization switching: a phase field approach

NASA Astrophysics Data System (ADS)

Wang, Dan; Wang, Linxiang; Melnik, Roderick

2017-06-01

Different from the traditional piezoelectric vibration energy harvesting, a new strategy based on stress-induced polarization switching has been proposed in the current paper. Two related prototypes are presented and the associated advantages and drawbacks have been discussed in detail. It has been demonstrated that, with the assistance of a bias electric field, the robustness of the energy harvesters is improved. Furthermore, the real-space phase-field model has been employed to study the nonlinear hysteretic behavior involved in the proposed energy harvesting process. A substantially larger electric current associated with the stress-induced polarization switching has been demonstrated when compared with that with piezoelectric effect. In addition, the effects of bias electric potential, bias resistance, mechanical boundary conditions, charge leakage and electrodes arrangements have also been investigated by the phase-field simulation, which provides a guidance for future real implementations.

Design study and performance analysis of 12S-14P field excitation flux switching motor for hybrid electric vehicle

NASA Astrophysics Data System (ADS)

Husin, Zhafir Aizat; Sulaiman, Erwan; Khan, Faisal; Mazlan, Mohamed Mubin Aizat; Othman, Syed Muhammad Naufal Syed

2015-05-01

This paper presents a new structure of 12slot-14pole field excitation flux switching motor (FEFSM) as an alternative candidate of non-Permanent Magnet (PM) machine for HEV drives. Design study, performance analysis and optimization of field excitation flux switching machine with non-rare-earth magnet for hybrid electric vehicle drive applications is done. The stator of projected machine consists of iron core made of electromagnetic steels, armature coils and field excitation coils as the only field mmf source. The rotor is consisted of only stack of iron and hence, it is reliable and appropriate for high speed operation. The design target is a machine with the maximum torque, power and power density, more than 210Nm, 123kW and 3.5kW/kg, respectively, which competes with interior permanent magnet synchronous machine used in existing hybrid electric vehicle. Some design feasibility studies on FEFSM based on 2D-FEA and deterministic optimization method will be applied to design the proposed machine.

Switching for electric rail guns

NASA Astrophysics Data System (ADS)

Barber, J. P.; Bauer, D. P.

1984-03-01

The switching requirements of single-stage electric railguns powered by inductive energy stores are analyzed, and the design of a 500-kA commutation switch is shown. The closed, commutation, and off states of the switch and the reclosure function at the end of the projectile acceleration are discussed in general terms, and the specific requirements of the railgun facility at Australian National University are listed. The switch designed is essentially a railgun mounted perpendicular to the breech of the electric railgun, with the armature accelerating down copper rails at closing speeds from 50 m/sec at 100 kA to 300 m/sec at 500 kA to commutate current to the railgun. Commutation time and maximum voltage during 200 shots at 400 kA were found to be 50 microsec and 100 V; commutation inductance was 18-20 nH.

Gate-tunable gigantic changes in lattice parameters and optical properties in VO2

NASA Astrophysics Data System (ADS)

Nakano, Masaki; Okuyama, Daisuke; Shibuya, Keisuke; Ogawa, Naoki; Hatano, Takafumi; Kawasaki, Masashi; Arima, Taka-Hisa; Iwasa, Yoshihiro; Tokura, Yoshinori

2014-03-01

The field-effect transistor provides an electrical switching function of current flowing through a channel surface by external gate voltage (VG). We recently reported that an electric-double-layer transistor (EDLT) based on vanadium dioxide (VO2) enables electrical switching of the metal-insulator phase transition, where the low-temperature insulating state can be completely switched to the metallic state by application of VG. Here we demonstrate that VO2-EDLT enables electrical switching of lattice parameters and optical properties as well as electrical current. We performed in-situ x-ray diffraction and optical transmission spectroscopy measurements, and found that the c-axis length and the infrared transmittance of VO2 can be significantly modulated by more than 1% and 40%, respectively, by application of VG. We emphasize that these distinguished features originate from the electric-field induced bulk phase transition available with VO2-EDLT. This work was supported by the Japan Society for the Promotion of Science (JSPS) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

NASA Astrophysics Data System (ADS)

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

2017-07-01

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Zinc-chlorine battery plant system and method

DOEpatents

Whittlesey, Curtis C.; Mashikian, Matthew S.

1981-01-01

A zinc-chlorine battery plant system and method of redirecting the electrical current around a failed battery module. The battery plant includes a power conditioning unit, a plurality of battery modules connected electrically in series to form battery strings, a plurality of battery strings electrically connected in parallel to the power conditioning unit, and a bypass switch for each battery module in the battery plant. The bypass switch includes a normally open main contact across the power terminals of the battery module, and a set of normally closed auxiliary contacts for controlling the supply of reactants electrochemically transformed in the cells of the battery module. Upon the determination of a failure condition, the bypass switch for the failed battery module is energized to close the main contact and open the auxiliary contacts. Within a short time, the electrical current through the battery module will substantially decrease due to the cutoff of the supply of reactants, and the electrical current flow through the battery string will be redirected through the main contact of the bypass switch.

A Study of Interior Wiring, Color Coding, and Switching Principles by Simulation and Practice.

ERIC Educational Resources Information Center

McCormick, B. G.; McCormick, Robert S.

After a preliminary introduction and a chapter on wiring and electricity safety procedures, this study text proceeds to offer a general coverage of single and polyphase alternating current electrical systems used to power factories, farms, small businesses, and homes. Electrical power, from its generation to its application, is discussed, with the…

Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior

NASA Astrophysics Data System (ADS)

Anton, Eva-Maria; García, R. Edwin; Key, Thomas S.; Blendell, John E.; Bowman, Keith J.

2009-01-01

A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.

Domain switching in single-phase multiferroics

NASA Astrophysics Data System (ADS)

Jia, Tingting; Cheng, Zhenxiang; Zhao, Hongyang; Kimura, Hideo

2018-06-01

Multiferroics are a time-honoured research subject by reason for their tremendous application potential in the information industry, such as in multi-state information storage devices and new types of sensors. An outburst of studies on multiferroicity has been witnessed in the 21st century, although this field has a long research history since the 19th century. Multiferroicity has now become one of the hottest research topics in condensed matter physics and materials science. Numerous efforts have been made to investigate the cross-coupling phenomena among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, and ferroelasticity, especially the coupling between electric and magnetic orderings that would account for the magnetoelectric (ME) effect in multiferroic materials. The magnetoelectric properties and coupling behavior of single phase multiferroics are dominated by their domain structures. It was also noted that, however, the multiferroic materials exhibit very complicated domain structures. Studies on domain structure characterization and domain switching are a crucial step in the exploration of approaches to the control and manipulation of magnetic (electric) properties using an electric (magnetic) field or other means. In this review, following a concise outline of our current basic knowledge on the magnetoelectric (ME) effect, we summarize some important research activities on domain switching in single-phase multiferroic materials in the form of single crystals and thin films, especially domain switching behavior involving strain and the related physics in the last decade. We also introduce recent developments in characterization techniques for domain structures of ferroelectric or multiferroic materials, which have significantly advanced our understanding of domain switching dynamics and interactions. The effects of a series of issues such as electric field, magnetic field, and stress effects on domain switching are been discussed as well. It is intended that an integrated viewpoint of these issues, as provided here, will further motivate synergistic activities between the various research groups and industry towards the development and characterization of multiferroic materials.

21. UPPER STATION, LOWER FLOOR, MOTOR ROOM, SWITCHING PANEL, ELECTRICAL ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

21. UPPER STATION, LOWER FLOOR, MOTOR ROOM, SWITCHING PANEL, ELECTRICAL POWER ENTRY. - Monongahela Incline Plane, Connecting North side of Grandview Avenue at Wyoming Street with West Carson Street near Smithfield Street, Pittsburgh, Allegheny County, PA

Observation of Failure and Domain Switching in Lead Zirconate Titanate Ceramics

NASA Astrophysics Data System (ADS)

Okayasu, Mitsuhiro; Sugiyama, Eriko; Sato, Kazuto; Mizuno, Mamoru

The mechanical and electrical properties (electromechanical coupling coefficient, piezoelectric constant and dielectric constant) of lead zirconate titanate (PZT) ceramics are investigated during mechanical static and cyclic loading. There are several failure characteristics which can alter the material properties of PZT ceramics. The elastic constant increases and electrical properties decrease with increasing the applied load. This is due to the internal strain arising from the domain switching. In this case, 90° domain switching occurs anywhere in the samples as the sample is loaded. It is also apparent that electrogenesis occurs several times during cyclic loading to the final fracture. This occurrence is related to the domain switching. The elastic constant and electrical properties can decrease because of crack generation in the PZT ceramics. Moreover, the elastic constant increases with increase of the mechanical load and decreases with decrease of the load. On the contrary, the opposite sense of change of the electrical properties is observed.

Optically triggered high voltage switch network and method for switching a high voltage

DOEpatents

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

49 CFR 236.820a - Switch, power-operated.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Switch, power-operated. 236.820a Section 236.820a... Switch, power-operated. A switch operated by an electrically, hydraulically, or pneumatically driven switch-and-lock movement. [49 FR 3388, Jan. 26, 1984] ...

49 CFR 236.820a - Switch, power-operated.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Switch, power-operated. 236.820a Section 236.820a... Switch, power-operated. A switch operated by an electrically, hydraulically, or pneumatically driven switch-and-lock movement. [49 FR 3388, Jan. 26, 1984] ...

49 CFR 236.820a - Switch, power-operated.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Switch, power-operated. 236.820a Section 236.820a... Switch, power-operated. A switch operated by an electrically, hydraulically, or pneumatically driven switch-and-lock movement. [49 FR 3388, Jan. 26, 1984] ...

49 CFR 236.820a - Switch, power-operated.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Switch, power-operated. 236.820a Section 236.820a... Switch, power-operated. A switch operated by an electrically, hydraulically, or pneumatically driven switch-and-lock movement. [49 FR 3388, Jan. 26, 1984] ...

49 CFR 236.820a - Switch, power-operated.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Switch, power-operated. 236.820a Section 236.820a... Switch, power-operated. A switch operated by an electrically, hydraulically, or pneumatically driven switch-and-lock movement. [49 FR 3388, Jan. 26, 1984] ...

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Out-of-plane three-stable-state ferroelectric switching: Finding the missing middle states

NASA Astrophysics Data System (ADS)

Lee, Jin Hong; Chu, Kanghyun; Kim, Kwang-Eun; Seidel, Jan; Yang, Chan-Ho

2016-03-01

By realizing a nonvolatile third intermediate ferroelectric state through anisotropic misfit strain, we demonstrate electrical switching among three stable out-of-plane polarizations in bismuth ferrite thin films grown on (110) pc-oriented gadolinium scandate substrates (where pc stands for pseudocubic) by the use of an asymmetric external electric field at the step edge of a bottom electrode. We employ phenomenological Landau theory, in conjunction with electrical poling experiments using piezoresponse force microscopy, to understand the role of anisotropic misfit strain and an in-plane electric field in stabilization of multiple ferroelectric states and their competition. Our finding provides a useful insight into multistep ferroelectric switching in rhombohedral ferroelectrics.

Switch: a planning tool for power systems with large shares of intermittent renewable energy.

PubMed

Fripp, Matthias

2012-06-05

Wind and solar power are highly variable, so it is it unclear how large a role they can play in future power systems. This work introduces a new open-source electricity planning model--Switch--that identifies the least-cost strategy for using renewable and conventional generators and transmission in a large power system over a multidecade period. Switch includes an unprecedented amount of spatial and temporal detail, making it possible to address a new type of question about the optimal design and operation of power systems with large amounts of renewable power. A case study of California for 2012-2027 finds that there is no maximum possible penetration of wind and solar power--these resources could potentially be used to reduce emissions 90% or more below 1990 levels without reducing reliability or severely raising the cost of electricity. This work also finds that policies that encourage customers to shift electricity demand to times when renewable power is most abundant (e.g., well-timed charging of electric vehicles) could make it possible to achieve radical emission reductions at moderate costs.

Electrical Circuit Tester

DOEpatents

Love, Frank

2006-04-18

An electrical circuit testing device is provided, comprising a case, a digital voltage level testing circuit with a display means, a switch to initiate measurement using the device, a non-shorting switching means for selecting pre-determined electrical wiring configurations to be tested in an outlet, a terminal block, a five-pole electrical plug mounted on the case surface and a set of adapters that can be used for various multiple-pronged electrical outlet configurations for voltages from 100 600 VAC from 50 100 Hz.

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric-field-induced spin switch of endohedral dodecahedrane heterodimers H@C20Hn-C20Hn@M (M= Cu, Ag and Au, n = 15, 18, and 19): a theoretical study.

PubMed

Hou, Jianhua; Yang, Zhixiong; Li, Zhiru; Chai, Haoyu; Zhao, Ruiqi

2017-08-01

We designed nine endohedral dodecahedrane heterodimers H@C 20 H n -C 20 H n @M (M = Cu, Ag, and Au, n = 15, 18, and 19) that may act as single-molecule spin switches, and we predicted theoretically that the ground states of the dimmers shift from low-spin states (S = 0) to the high-spin states (S = 1) under an external electric field applied parallel or perpendicular to the molecular symmetry axes, consisting well with the analyses of Stark effect. Molecular orbitals analyses provide an intuitive insight into the spin crossover behavior. This study expands the application of endohedral chemistry and provides new molecules for designing single-molecule spin switch.

Cooling system for radiator and condenser of vehicles with an air conditioner and method of operating the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimada, Y.; Obata, Y.; Takeoka, T.

1987-04-21

A cooling system is described for radiator and condenser of vehicles with an air conditioner having a first blower and a second blower for cooling the radiator and the condenser so as to cool the engine cooling water and so as to condense the coolant, and a cooling cycle operation switch which comprises: (a) engine cooling water temperature switch (SW1) connected between a power supply and the first blower and turned on and off in accordance with high and low temperature conditions of the engine cooling water; (b) relay switching means for controlling the first and second blowers in accordancemore » with the on-off conditions of the cooling cycle operation switch; and (c) a control circuit having an on-off switch and a solenoid and connected between the relay switching means and either the first blower or the second blower, the solenoid of the control circuit being connected to switches (SW3, SW4 and SW5) for electrical equipment such as headlights, wipers; whereby, when any one of the switches for the electrical equipment of the vehicle is turned off, the first and second blowers are operated at normal speed through the relay switching means and the control circuit, upon the operation of the cooling cycle operation switch, while when any one of the switches for the electrical equipment is turned on, the first blower is on-off controlled through the engine cooling water temperature switch (SW1) and the second blower remains operated through the relay switching means.« less

Calibratable solid-state pressure switch

NASA Technical Reports Server (NTRS)

1969-01-01

Pressure switch, incorporating a semiconductor light-detector coupled to an electrically controlled actuating unit, provides accurate and reliable switching over a broad range of pressures and environments.

Magnetically operated limit switch has improved reliability, minimizes arcing

NASA Technical Reports Server (NTRS)

Steiner, R.

1966-01-01

Limit switch for reliable, low-travel, snap action with negligible arcing uses an electrically nonconductive permanent magnet consisting of a ferrimagnetic ceramic and ferromagnetic pole shoes which form a magnetic and electrically conductive circuit with a ferrous-metal armature.

Nonvolatile Ionic Two-Terminal Memory Device

NASA Technical Reports Server (NTRS)

Williams, Roger M.

1990-01-01

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

Low power consumption resistance random access memory with Pt/InOx/TiN structure

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn

2013-09-01

In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption.

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

2016-07-11

The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, CA; Martin, PC; Schaef, T

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, Carlos A.; Martin, Paul F.; Schaef, Herbert T.

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ 5 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

An Electrically Switchable Metal-Organic Framework

NASA Astrophysics Data System (ADS)

Fernandez, Carlos A.; Martin, Paul C.; Schaef, Todd; Bowden, Mark E.; Thallapally, Praveen K.; Dang, Liem; Xu, Wu; Chen, Xilin; McGrail, B. Peter

2014-08-01

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in a reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.

Compact self-contained electrical-to-optical converter/transmitter

DOEpatents

Seligmann, Daniel A.; Moss, William C.; Valk, Theodore C.; Conder, Alan D.

1995-01-01

A first optical receiver and a second optical receiver are provided for receiving a calibrate command and a power switching signal, respectively, from a remote processor. A third receiver is provided for receiving an analog electrical signal from a transducer. A calibrator generates a reference signal in response to the calibrate command. A combiner mixes the electrical signal with the reference signal to form a calibrated signal. A converter converts the calibrated signal to an optical signal. A transmitter transmits the optical signal to the remote processor. A primary battery supplies power to the calibrator, the combiner, the converter, and the transmitter. An optically-activated switch supplies power to the calibrator, the combiner, the converter, and the transmitter in response to the power switching signal. An auxiliary battery supplies power continuously to the switch.

Methods and apparatus for optical switching using electrically movable optical fibers

DOEpatents

Peterson, Kenneth A [Albuquerque, NM

2007-03-13

Methods and apparatuses for electrically controlled optical switches are presented. An electrically controlled optical switch includes a fixture formed using a laminated dielectric material, a first optical fiber having a fixed segment supported by the fixture and a movable segment extending into a cavity, a second optical fiber having a fixed segment supported by the fixture and an extended segment where an optical interconnect may be established between the first optical fiber and the second optical fiber, and a first electrical actuator functionally coupled to the fixture and the first fiber which alters a position of the moveable segment, based upon a control signal, for changing a state of the optical interconnect between one of two states.

49 CFR 236.203 - Hand operated crossover between main tracks; protection.

Code of Federal Regulations, 2014 CFR

2014-10-01

...) Electric locking of the switches of the crossover. Signals governing movements over either switch shall... crossover is occupied by a train, locomotive or car in such a manner as to foul the main track. It shall not... electric locking releases. ...

49 CFR 236.203 - Hand operated crossover between main tracks; protection.

Code of Federal Regulations, 2013 CFR

2013-10-01

...) Electric locking of the switches of the crossover. Signals governing movements over either switch shall... crossover is occupied by a train, locomotive or car in such a manner as to foul the main track. It shall not... electric locking releases. ...

49 CFR 236.203 - Hand operated crossover between main tracks; protection.

Code of Federal Regulations, 2012 CFR

2012-10-01

...) Electric locking of the switches of the crossover. Signals governing movements over either switch shall... crossover is occupied by a train, locomotive or car in such a manner as to foul the main track. It shall not... electric locking releases. ...

49 CFR 236.203 - Hand operated crossover between main tracks; protection.

Code of Federal Regulations, 2011 CFR

2011-10-01

...) Electric locking of the switches of the crossover. Signals governing movements over either switch shall... crossover is occupied by a train, locomotive or car in such a manner as to foul the main track. It shall not... electric locking releases. ...

49 CFR 236.203 - Hand operated crossover between main tracks; protection.

Code of Federal Regulations, 2010 CFR

2010-10-01

...) Electric locking of the switches of the crossover. Signals governing movements over either switch shall... crossover is occupied by a train, locomotive or car in such a manner as to foul the main track. It shall not... electric locking releases. ...

30 CFR 57.12002 - Controls and switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Controls and switches. 57.12002 Section 57... Surface and Underground § 57.12002 Controls and switches. Electric equipment and circuits shall be provided with switches or other controls. Such switches or controls shall be of approved design and...

Voltage controlled Bi-mode resistive switching effects in MnO2 based devices

NASA Astrophysics Data System (ADS)

Hu, P.; Wu, S. X.; Wang, G. L.; Li, H. W.; Li, D.; Li, S. W.

2018-01-01

In this paper, the voltage induced bi-mode resistive switching behavior of an MnO2 thin film based device was studied. The device showed prominent bipolar resistive switching behavior with good reproducibility and high endurance. In addition, complementary resistive switching characteristics can be observed by extending the voltage bias during voltage sweep operations. The electrical measurement data and fitting results indicate that the oxygen vacancies act as defects to form a conductive path, which is connective or disrupted to realize a low resistive state or a high resistive state. Changing the sweep voltage can tune the oxygen vacancies distribution, which will achieve complementary resistive switching.

Optically Driven Q-Switches For Lasers

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1994-01-01

Optically driven Q-switches for pulsed lasers proposed, taking place of acousto-optical, magneto-optical, and electro-optical switches. Optical switching beams of proposed Q-switching most likely generated in pulsed diode lasers or light-emitting diodes, outputs of which are amplitude-modulated easily by direct modulation of relatively small input currents. Energy efficiencies exceed those of electrically driven Q-switches.

Analog self-powered harvester achieving switching pause control to increase harvested energy

NASA Astrophysics Data System (ADS)

Makihara, Kanjuro; Asahina, Kei

2017-05-01

In this paper, we propose a self-powered analog controller circuit to increase the efficiency of electrical energy harvesting from vibrational energy using piezoelectric materials. Although the existing synchronized switch harvesting on inductor (SSHI) method is designed to produce efficient harvesting, its switching operation generates a vibration-suppression effect that reduces the harvested levels of electrical energy. To solve this problem, the authors proposed—in a previous paper—a switching method that takes this vibration-suppression effect into account. This method temporarily pauses the switching operation, allowing the recovery of the mechanical displacement and, therefore, of the piezoelectric voltage. In this paper, we propose a self-powered analog circuit to implement this switching control method. Self-powered vibration harvesting is achieved in this study by attaching a newly designed circuit to an existing analog controller for SSHI. This circuit aims to effectively implement the aforementioned new switching control strategy, where switching is paused in some vibration peaks, in order to allow motion recovery and a consequent increase in the harvested energy. Harvesting experiments performed using the proposed circuit reveal that the proposed method can increase the energy stored in the storage capacitor by a factor of 8.5 relative to the conventional SSHI circuit. This proposed technique is useful to increase the harvested energy especially for piezoelectric systems having large coupling factor.

A Mechanical Switch Using Spectral Microshifts

NASA Astrophysics Data System (ADS)

Mitchell, Gordon L.; Saaski, Elric W.; Hartl, James C.

1989-02-01

Among the simplest fiber optic sensors, are those which operate in a binary fashion; they were the first sensor types to be developed. Early experiments with fiber bundles and shutters produced demonstrations of, for example, displacement sensors. Typical applications range from position sensing for aircraft landing gear to counting objects on a production line. Because they frequently replace electrical snap action switches, binary sensors are generally called optical switches. Optical switch applications account for a much larger market than the more complex analog measurements discussed in the balance of this volume. This paper presents an optical switch concept that uses a single fiber and is tolerant of back reflections. The sensor element is a low finesse Fabry-Perot pressure sensor which replaces the electrical contact in a conventional snap action switch.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

Large-eddy simulation, atmospheric measurement and inverse modeling of greenhouse gas emissions at local spatial scales

NASA Astrophysics Data System (ADS)

Nottrott, Anders Andelman

Multiferroic materials and devices have attracted intensified interests due to the demonstrated strong magnetoelectric coupling in new multiferroic materials, artificial multiferroic heterostructures and devices with unique functionalities and superior performance characteristics. This offers great opportunities for achieving compact, fast, energy-efficient and voltage tunable spintronic devices. In traditional magnetic materials based magnetic random access memories (MRAM) devices, the binary information is stored as magnetization. The high coercivity of the ferromagnetic media requires large magnetic fields for switching the magnetic states thus consuming large amount of energy. In modern MRAM information writing process, spin-torque technique is utilized for minimizing the large energy for generating magnetic field by passing through a spin-polarized current directly to the magnets. However, both methods still need large current/current density to toggle the magnetic bits which consume large amount of energy. With the presence of multiferroic or magnetoelectric materials, spin is controlled by electric field which opens new opportunities for power-efficient voltage control of magnetization in spintronic devices leading to magnetoelectric random access memories (MERAM) with ultra-low energy consumption. However, state of the art multiferroic materials still have difficulty of realizing nonvolatile 180° magnetization reversal, which is desired in realizing MERAM. In a strain-mediated multiferroic system, the typical modification of the magnetism of ferromagnetic phase as a function of bipolar electric field shows a "butterfly" like behavior. This is due to the linear piezoelectricity of ferroelectric phase which has a "butterfly" like piezostrain as a function of electric field curve resulting from ferroelectric domain wall switching. In this case, the magnetization state is volatile because of the vanishing of the piezostrain at zero electric field. However, the non-volatile switching of magnetization would be more promising for information storage or MERAM devices with lower energy consumption and the magnetic state can be further controlled by voltage impulse. In this work, we first study the equivalent of direct and converse magnetoelectric effects. The resonant direct and converse magnetoelectric (ME) effects have been investigated experimentally and theoretically in FeGa/PZT/FeGa sandwich laminate composites. The frequency responses of direct and converse magnetoelectric effects were measured under the same electric and magnetic bias conditions. The resonant direct ME effect (DME) occurs at an antiresonance frequency, while resonant converse ME effect (CME) occurs at a resonance frequency. The antiresonance and resonance frequencies have close but different values under identical bias conditions. The magnitudes of resonant effective ME coefficients for direct and converse ME effects are also not equal. Based on different sets of constitutive equations of the materials for DME and CME, a new model was developed to describe the frequency response of DME and CME in laminate composite, which was in good agreement with the experimental results. Inequivalence of resonant ME effects is ascribed to the different mechanical and electrical boundary conditions for DME and CME. On the other hand, similar bias E and H field dependence was observed for both DME and CME resonance frequencies and resonant coefficients, indicating consistency between DME and CME effects. In the study of the frequency response of DME and CME, the linear piezoelectric effect is used. However, this linear piezoelectric effect in converse magnetoelectric coupling would lead to "butter-fly" like magnetization vs. electric field curve which leads to a "volatile" behavior in magnetic memory system. In the presented study, a unique ferroelastic switching pathway in ferroelectric substrates is utilized to produce two distinct, reversible and stable lattice strain states which leads to the establish of two stable magnetization states of the ferromagnetic thin film. In this process, instead of complete 180° ferromagnetic domain switching, 71°/109° ferroelastic domain wall switching is involved, where the electric polarization is switching between in-plane and out-of-plane direction. A voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature is first demonstrated. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. Direct and converse magnetoelectric effects are carefully quantified.

Hospital steam sterilizer usage: could we switch off to save electricity and water?

PubMed

McGain, Forbes; Moore, Graham; Black, Jim

2016-07-01

Steam sterilization in hospitals is an energy and water intensive process. Our aim was to identify opportunities to improve electricity and water use. The objectives were to find: the time sterilizers spent active, idle and off; the variability in sterilizer use with the time of day and day of the week; and opportunities to switch off sterilizers instead of idling when no loads were waiting, and the resultant electricity and water savings. Analyses of routine data for one year of the activity of the four steam sterilizers in one hospital in Melbourne, Australia. We examined active sterilizer cycles, routine sterilizer switch-offs, and when sterilizers were active, idle and off. Several switch-off strategies were examined to identify electricity and water savings: switch off idle sterilizers when no loads are waiting and switch off one sterilizer after 10:00 h and a second sterilizer after midnight on all days. Sterilizers were active for 13,430 (38%) sterilizer-hours, off for 4822 (14%) sterilizer-hours, and idle for 16,788 (48%) sterilizer-hours. All four sterilizers were simultaneously active 9% of the time, and two or more sterilizers were idle for 69% of the time. A sterilizer was idle for two hours or less 13% of the time and idle for more than 2 h 87% of the time. A strategy to switch off idle sterilizers would reduce electricity use by 66 MWh and water use by 1004 kl per year, saving 26% electricity use and 13% of water use, resulting in financial savings of AUD$13,867 (UK£6,517) and a reduction in 79 tonnes of CO2 emissions per year. An alternative switch-off strategy of one sterilizer from 10:00 h onwards and a second from midnight would have saved 30 MWh and 456 kl of water. The methodology used of how hospital sterilizer use could be improved could be applied to all hospitals and more broadly to other equipment used in hospitals. © The Author(s) 2016.

Current polarity-dependent manipulation of antiferromagnetic domains

NASA Astrophysics Data System (ADS)

Wadley, Peter; Reimers, Sonka; Grzybowski, Michal J.; Andrews, Carl; Wang, Mu; Chauhan, Jasbinder S.; Gallagher, Bryan L.; Campion, Richard P.; Edmonds, Kevin W.; Dhesi, Sarnjeet S.; Maccherozzi, Francesco; Novak, Vit; Wunderlich, Joerg; Jungwirth, Tomas

2018-05-01

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields1. Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents2. In previous experiments, orthogonal in-plane current pulses were used to induce 90° rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry3. Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using X-ray magnetic linear dichroism microscopy, and can also be detected electrically. Switching by domain-wall motion can occur at much lower current densities than those needed for coherent domain switching.

Fuel switching in the electricity sector under the EU ETS: Review and prospective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delarue, E.; Voorspools, K.; D'haeseleer, W.

2008-06-15

The European Union has implemented the European Union emission trading scheme (EU ETS) as an instrument to facilitate greenhouse gas (GHG) emission abatement stipulated in the Kyoto protocol. Empirical data show that in the early stages of the EU ETS, the value of a ton of CO{sub 2} has already led to emission abatement through switching from coal to gas in the European electric power sector. In the second part of this paper, an electricity generation simulation model is used to perform simulations on the switching behavior in both the first and the second trading periods of the EU ETS.more » In 2005, the reduction in GHG emissions in the electric power sector due to EU ETS is estimated close to 88 Mton. For the second trading period, a European Union allowance (EUA) price dependent GHG reduction curve has been determined. The obtained switching potential turns out to be significant, up to 300 Mton/year, at sufficiently high EUA prices.« less

Experimental study of switching in a rho-i(MQW)-eta vertical coupler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavailles, J.A.; Erman, M.; Woodbridge, K.

1989-11-01

Electrically controlled switching in a vertically arranged directional coupler with GaAs/GaAIAs multiple quantum well waveguides is demonstrated. Coupling lengths and extinction parameters are determined by using a sample processed in such a way that injection conditions are well defined and that the coupler length can be varied continuously.

Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes

NASA Astrophysics Data System (ADS)

Chen, Feng; Schafranek, Robert; Wachau, André; Zhukov, Sergey; Glaum, Julia; Granzow, Torsten; von Seggern, Heinz; Klein, Andreas

2010-11-01

The influence of Pt, tin-doped In2O3, and RuO2 electrodes on the electrical fatigue of bulk ceramic Pb(Zr,Ti)O3 (PZT) has been studied. Schottky barrier heights at the ferroelectric/electrode interfaces vary by more than one electronvolt for different electrode materials and do not depend on crystallographic orientation of the interface. Despite different barrier heights, hysteresis loops of polarization, strain, permittivity, and piezoelectric constant and the switching kinetics are identical for all electrodes. A 20% reduction in polarization after 106 bipolar cycles is observed for all the samples. In contrast to PZT thin films, the loss of remanent polarization with bipolar switching cycles does not significantly depend on the electrode material.

Dye-doped nanostructure polypyrrole film for electrochemically switching solid-phase microextraction of Ni(II) and ICP-OES analysis of waste water.

PubMed

Shamaeli, Ehsan; Alizadeh, Naader

2012-01-01

A nanostructure fiber based on conducting polypyrrole synthesized by an electrochemical method has been developed, and used for electrochemically switching solid-phase microextraction (ES-SPME). The ES-SPME was prepared by the doping of eriochrome blue in polypyrrole (PPy-ECB) and used for selectively extracting the Ni(II) cation in the presence of some transition and heavy metal ions. The cation-exchange behavior of electrochemically prepared polypyrrole on stainless-steel with and without eriochrome blue (ECB) dye was characterized using ICP-OES analysis. The effects of the scan rate for electrochemical synthesis, uptake and the release potential on the extraction behavior of the PPy-ECB conductive fiber were studied. Uptake and release time profiles show that the process of electrically switched cation exchange could be completed within 250 s. The results of the present study point concerning the possibility of developing a selective extraction process for Ni(II) from waste water was explored using such a nanostructured PPy-ECB film through an electrically switched cation exchange. 2012 © The Japan Society for Analytical Chemistry

Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

NASA Astrophysics Data System (ADS)

Ran, Ke; Rösner, Benedikt; Butz, Benjamin; Fink, Rainer H.; Spiecker, Erdmann

2016-10-01

The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

Electrical control of exchange bias via oxygen migration across CoO-ZnO nanocomposite barrier

NASA Astrophysics Data System (ADS)

Li, Q.; Yan, S. S.; Xu, J.; Li, S. D.; Zhao, G. X.; Long, Y. Z.; Shen, T. T.; Zhang, K.; Zhang, J.

2016-12-01

We proposed a nanocomposite barrier CoO-ZnO for magnetism manipulation in Co/CoO-ZnO/Ag heterojunctions. Both electrical control of magnetism and resistive switching were realized in this junction. An electrical tunable exchange bias of CoO1-v (v denotes O vacancies) on Co films was realized using voltages below 1 volt. The magnetism modulation associated with resistive switching can be attributed to the oxygen ions migration between the insulating CoO1-v layer and the semiconductive ZnO1-v layer, which can cause both ferromagnetic phase and resistance switching of CoO1-v layer.

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Electric-field-controlled optical switch using Kerr effect and gradient of the composition ratio Nb/(Ta + Nb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Dewei, E-mail: deweigong@hit.edu.cn; Liang, Yonggan; Ou, Wenjing

2016-03-15

Highlights: • An abnormal laser deflection phenomenon in KTN crystals is demonstrated. • The origin of the deflection phenomenon was discussed in detail. • By exploiting the deflection, we have designed an optical switch. • The g{sub 11}/g{sub 12} ratio (>10), wavelength range(491–1064 nm), and I–V characteristics (0–800 V) were studied. • The extinction ratio (0–1) and influence of the photorefractive effect were studied. - Abstract: By exploiting the Kerr effect and the gradient of the composition ratio m, Nb/(Ta + Nb) in mol%, in KTa{sub 1−x}Nb{sub x}O{sub 3} (KTN) crystals, we have designed an electric-field-controlled optical switch. The operatingmore » principle of the switch is described. During the switching process, the incident linearly polarized beam is orthogonally deflected as it propagates through the crystals. The g{sub 11}/g{sub 12} ratio (>10), wavelength range (491–1064 nm), I–V characteristics (0–800 V), extinction ratio (0–1), gradient of Curie temperature (21–22.9 °C), response time that may be in ns order, and influence of the photorefractive effect were studied. The results show that our design provides a new kind of optical switch with macro scale (mm order), adjustable extinction ratio (0–1), wide wavelength range (491–1064 nm).« less

46 CFR 111.105-19 - Switches.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Switches. 111.105-19 Section 111.105-19 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL... controls any explosionproof or flameproof equipment, under § 111.105-19 must have a pole for each...

Compact self-contained electrical-to-optical converter/transmitter

DOEpatents

Seligmann, D.A.; Moss, W.C.; Valk, T.C.; Conder, A.D.

1995-11-21

A first optical receiver and a second optical receiver are provided for receiving a calibrate command and a power switching signal, respectively, from a remote processor. A third receiver is provided for receiving an analog electrical signal from a transducer. A calibrator generates a reference signal in response to the calibrate command. A combiner mixes the electrical signal with the reference signal to form a calibrated signal. A converter converts the calibrated signal to an optical signal. A transmitter transmits the optical signal to the remote processor. A primary battery supplies power to the calibrator, the combiner, the converter, and the transmitter. An optically-activated switch supplies power to the calibrator, the combiner, the converter, and the transmitter in response to the power switching signal. An auxiliary battery supplies power continuously to the switch. 13 figs.

An electrically actuated molecular toggle switch

NASA Astrophysics Data System (ADS)

Gerhard, Lukas; Edelmann, Kevin; Homberg, Jan; Valášek, Michal; Bahoosh, Safa G.; Lukas, Maya; Pauly, Fabian; Mayor, Marcel; Wulfhekel, Wulf

2017-03-01

Molecular electronics is considered a promising approach for future nanoelectronic devices. In order that molecular junctions can be used as electrical switches or even memory devices, they need to be actuated between two distinct conductance states in a controlled and reproducible manner by external stimuli. Here we present a tripodal platform with a cantilever arm and a nitrile group at its end that is lifted from the surface. The formation of a coordinative bond between the nitrile nitrogen and the gold tip of a scanning tunnelling microscope can be controlled by both electrical and mechanical means, and leads to a hysteretic switching of the conductance of the junction by more than two orders of magnitude. This toggle switch can be actuated with high reproducibility so that the forces involved in the mechanical deformation of the molecular cantilever can be determined precisely with scanning tunnelling microscopy.

High-speed electro-optic switch with -80 dB crosstalk

NASA Technical Reports Server (NTRS)

Pan, J. J.; Su, W. H.; Xu, J. Y.; Grove, C. H.

1992-01-01

Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.

High-frequency matrix converter with square wave input

DOEpatents

Carr, Joseph Alexander; Balda, Juan Carlos

2015-03-31

A device for producing an alternating current output voltage from a high-frequency, square-wave input voltage comprising, high-frequency, square-wave input a matrix converter and a control system. The matrix converter comprises a plurality of electrical switches. The high-frequency input and the matrix converter are electrically connected to each other. The control system is connected to each switch of the matrix converter. The control system is electrically connected to the input of the matrix converter. The control system is configured to operate each electrical switch of the matrix converter converting a high-frequency, square-wave input voltage across the first input port of the matrix converter and the second input port of the matrix converter to an alternating current output voltage at the output of the matrix converter.

Electrically operated magnetic switch designed to display reduced leakage inductance

DOEpatents

Cook, Edward G.

1994-01-01

An electrically operated magnetic switch is disclosed herein for use in opening and closing a circuit between two terminals depending upon the voltage across these terminals. The switch so disclosed is comprised of a ferrite core in the shape of a toroid having opposing ends and opposite inner and outer sides and an arrangement of electrically conductive components defining at least one current flow path which makes a number of turns around the core. This arrangement of components includes a first plurality of electrically conducive rigid rods parallel with and located outside the outer side of the core and a second plurality of electrically conductive rigid rods parallel with and located inside the inner side of the core. The arrangement also includes means for electrically connecting these rods together so that the define the current flow path. In one embodiment, this latter means uses rigid cross-tab means. In another, preferred embodiment, printed circuits on rigid dielectric substrates located on opposite ends of the core are utilized to interconnect the rods together.

Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

NASA Astrophysics Data System (ADS)

Zheng, Ming; Ni, Hao; Xu, Xiaoke; Qi, Yaping; Li, Xiaomin; Gao, Ju

2018-04-01

Electronic phase separation has been used to realize exotic functionalities in complex oxides with external stimuli, such as magnetic field, electric field, current, light, strain, etc. Using the Nd0.7Sr0.3MnO3/0.7 Pb (Mg1 /3Nb2 /3)O3-0 .3 PbTiO3 multiferroic heterostructure as a model system, we investigate the electric field and light cocontrol of phase separation in resistive switching. The electric-field-induced nonvolatile electroresistance response is achieved at room temperature using reversible ferroelastic domain switching, which can be robustly modified on illumination of light. Moreover, the electrically controlled ferroelastic strain can effectively enhance the visible-light-induced photoresistance effect. These findings demonstrate that the electric-field- and light-induced effects strongly correlate with each other and are essentially driven by electronic phase separation. Our work opens a gate to design electrically tunable multifunctional storage devices based on multiferroic heterostructures by adding light as an extra control parameter.

Electric-field-driven switching of individual magnetic skyrmions

NASA Astrophysics Data System (ADS)

Hsu, Pin-Jui; Kubetzka, André; Finco, Aurore; Romming, Niklas; von Bergmann, Kirsten; Wiesendanger, Roland

2017-02-01

Controlling magnetism with electric fields is a key challenge to develop future energy-efficient devices. The present magnetic information technology is mainly based on writing processes requiring either local magnetic fields or spin torques, but it has also been demonstrated that magnetic properties can be altered on the application of electric fields. This has been ascribed to changes in magnetocrystalline anisotropy caused by spin-dependent screening and modifications of the band structure, changes in atom positions or differences in hybridization with an adjacent oxide layer. However, the switching between states related by time reversal, for example magnetization up and down as used in the present technology, is not straightforward because the electric field does not break time-reversal symmetry. Several workarounds have been applied to toggle between bistable magnetic states with electric fields, including changes of material composition as a result of electric fields. Here we demonstrate that local electric fields can be used to switch reversibly between a magnetic skyrmion and the ferromagnetic state. These two states are topologically inequivalent, and we find that the direction of the electric field directly determines the final state. This observation establishes the possibility to combine electric-field writing with the recently envisaged skyrmion racetrack-type memories.

Switching Transistor

NASA Technical Reports Server (NTRS)

1981-01-01

Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

46 CFR 111.55-1 - General.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false General. 111.55-1 Section 111.55-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Switches § 111.55-1 General. (a) Each switch must meet Article 404 of NFPA NEC 2002 (incorporated by...

46 CFR 111.55-1 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false General. 111.55-1 Section 111.55-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Switches § 111.55-1 General. (a) Each switch must meet Article 404 of NFPA NEC 2002 (incorporated by...

46 CFR 111.55-1 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false General. 111.55-1 Section 111.55-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Switches § 111.55-1 General. (a) Each switch must meet Article 404 of NFPA NEC 2002 (incorporated by...

46 CFR 111.55-1 - General.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false General. 111.55-1 Section 111.55-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Switches § 111.55-1 General. (a) Each switch must meet Article 404 of NFPA NEC 2002 (incorporated by...

46 CFR 111.55-1 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false General. 111.55-1 Section 111.55-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Switches § 111.55-1 General. (a) Each switch must meet Article 404 of NFPA NEC 2002 (incorporated by...

Heat-transfer thermal switch

NASA Technical Reports Server (NTRS)

Friedell, M. V.; Anderson, A. J.

1974-01-01

Thermal switch maintains temperature of planetary lander, within definite range, by transferring heat. Switch produces relatively large stroke and force, uses minimum electrical power, is lightweight, is vapor pressure actuated, and withstands sterilization temperatures without damage.

Monitoring means for combustion engine electric storage battery means

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, G. K.; Rautiola, R. E.; Taylor, R. E.

Disclosed, in combination, are a combustion engine, an electric storage battery, an electrically powered starter motor for at times driving the engine in order to start the engine, and an electrical system monitor; the electrical system monitor has a first monitoring portion which senses the actual voltage across the battery and a second monitoring portion which monitors the current through the battery; an electrical switch controls associated circuitry and is actuatable into open or closed conditions; whenever the first monitoring portion senses a preselected magnitude of the actual voltage across the battery or the second monitoring portion senses a preselectedmore » magnitude of the current flow through the battery, the electrical switch is actuated.« less

Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Xiaoqing

2015-06-30

The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structuresmore » of BiFeO 3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.« less

Respiratory analysis system and method

NASA Technical Reports Server (NTRS)

Liu, F. F. (Inventor)

1973-01-01

A system is described for monitoring the respiratory process in which the gas flow rate and the frequency of respiration and expiration cycles can be determined on a real time basis. A face mask is provided with one-way inlet and outlet valves where the gas flow is through independent flowmeters and through a mass spectrometer. The opening and closing of a valve operates an electrical switch, and the combination of the two switches produces a low frequency electrical signal of the respiratory inhalation and exhalation cycles. During the time a switch is operated, the corresponsing flowmeter produces electric pulses representative of the flow rate; the electrical pulses being at a higher frequency than that of the breathing cycle and combined with the low frequency signal. The high frequency pulses are supplied to conventional analyzer computer which also receives temperature and pressure inputs and computes mass flow rate and totalized mass flow of gas. From the mass spectrometer, components of the gas are separately computed as to flow rate. The electrical switches cause operation of up-down inputs of a reversible counter. The respective up and down cycles can be individually monitored and combined for various respiratory measurements.

49 CFR 236.410 - Locking, hand-operated switch; requirements.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Locking, hand-operated switch; requirements. 236... Traffic Control Systems Standards § 236.410 Locking, hand-operated switch; requirements. (a) Each hand-operated switch in main track shall be locked either electrically or mechanically in normal position...

30 CFR 57.12018 - Identification of power switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Identification of power switches. 57.12018 Section 57.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12018 Identification of power switches. Principal power switches...

49 CFR 236.410 - Locking, hand-operated switch; requirements.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Locking, hand-operated switch; requirements. 236... Traffic Control Systems Standards § 236.410 Locking, hand-operated switch; requirements. (a) Each hand-operated switch in main track shall be locked either electrically or mechanically in normal position...

49 CFR 236.410 - Locking, hand-operated switch; requirements.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Locking, hand-operated switch; requirements. 236... Traffic Control Systems Standards § 236.410 Locking, hand-operated switch; requirements. (a) Each hand-operated switch in main track shall be locked either electrically or mechanically in normal position...

30 CFR 57.12018 - Identification of power switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Identification of power switches. 57.12018 Section 57.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12018 Identification of power switches. Principal power switches...

30 CFR 57.12018 - Identification of power switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Identification of power switches. 57.12018 Section 57.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12018 Identification of power switches. Principal power switches...

30 CFR 57.12018 - Identification of power switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Identification of power switches. 57.12018 Section 57.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12018 Identification of power switches. Principal power switches...

49 CFR 236.410 - Locking, hand-operated switch; requirements.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Locking, hand-operated switch; requirements. 236... Traffic Control Systems Standards § 236.410 Locking, hand-operated switch; requirements. (a) Each hand-operated switch in main track shall be locked either electrically or mechanically in normal position...

30 CFR 57.12018 - Identification of power switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Identification of power switches. 57.12018 Section 57.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12018 Identification of power switches. Principal power switches...

49 CFR 236.410 - Locking, hand-operated switch; requirements.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Locking, hand-operated switch; requirements. 236... Traffic Control Systems Standards § 236.410 Locking, hand-operated switch; requirements. (a) Each hand-operated switch in main track shall be locked either electrically or mechanically in normal position...

Study of Man-Machine Communications Systems for Disabled Persons (The Handicapped). Volume VII. Final Report.

ERIC Educational Resources Information Center

Kafafian, Haig

Teaching instructions, lesson plans, and exercises are provided for severely physically and/or neurologically handicapped persons learning to use the Cybertype electric writing machine with a tongue-body keyboard. The keyboard, which has eight double-throw toggle switches and a three-position state-selector switch, is designed to be used by…

Application of nanomaterials in two-terminal resistive-switching memory devices

PubMed Central

Ouyang, Jianyong

2010-01-01

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

Analysis and Evaluation of German Attainments and Research in the Liquid Rocket Engine Field. Volume 8. Rocket Engine Control and Safety Circuits

DTIC Science & Technology

1951-02-01

the pressure switch (16) is activated. This causes the-electrical circuit to open valve (11) and start the igniter (17). The nitrogen pressure...activates the pressure switch (11) at approximately 7 psi before it flows through the Injector (9) into the chamber. ATI-85«’󈧕 - -A 11...precluded. Accordingly, pressure switch (11) is inserted in the system in parallel (electrically) with the flow indicator (17), and the circuit may

Electromyographic Analysis of the Peroneous Longus during Bicycle Ergometry across Work Load and Pedal Type.

DTIC Science & Technology

1983-01-01

adjusted for each subject to 60 cycles per minute using a metronome. Gait cycle was determined using an electrical pressure switch attached to the...dental burr. Electrodes were filled with conducting gel and held in place with double adhesive rings. An electrical pressure switch was taped to the...the pressure switch was carried on a separate wire to the recording equipment. All wires were held tightly against the subject’s leg to reduce

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

PubMed Central

Jasulaneca, Liga; Kosmaca, Jelena; Meija, Raimonds; Andzane, Jana

2018-01-01

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed. PMID:29441272

High frequency modulation circuits based on photoconductive wide bandgap switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP materialmore » conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.« less

46 CFR 112.43-1 - Switches.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Switches. 112.43-1 Section 112.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING EMERGENCY LIGHTING AND POWER SYSTEMS Emergency Lighting Systems § 112.43-1 Switches. An emergency lighting system must not have a switch, except...

46 CFR 112.43-1 - Switches.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Switches. 112.43-1 Section 112.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING EMERGENCY LIGHTING AND POWER SYSTEMS Emergency Lighting Systems § 112.43-1 Switches. An emergency lighting system must not have a switch, except...

46 CFR 112.43-1 - Switches.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Switches. 112.43-1 Section 112.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING EMERGENCY LIGHTING AND POWER SYSTEMS Emergency Lighting Systems § 112.43-1 Switches. An emergency lighting system must not have a switch, except...

46 CFR 112.43-1 - Switches.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Switches. 112.43-1 Section 112.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING EMERGENCY LIGHTING AND POWER SYSTEMS Emergency Lighting Systems § 112.43-1 Switches. An emergency lighting system must not have a switch, except...

46 CFR 112.43-1 - Switches.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Switches. 112.43-1 Section 112.43-1 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING EMERGENCY LIGHTING AND POWER SYSTEMS Emergency Lighting Systems § 112.43-1 Switches. An emergency lighting system must not have a switch, except...

30 CFR 77.513 - Insulating mats at power switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Insulating mats at power switches. 77.513... COAL MINES Electrical Equipment-General § 77.513 Insulating mats at power switches. Dry wooden... switchboards and power-control switches where shock hazards exist. However, metal plates on which a person...

30 CFR 77.513 - Insulating mats at power switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Insulating mats at power switches. 77.513... COAL MINES Electrical Equipment-General § 77.513 Insulating mats at power switches. Dry wooden... switchboards and power-control switches where shock hazards exist. However, metal plates on which a person...

30 CFR 77.513 - Insulating mats at power switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Insulating mats at power switches. 77.513... COAL MINES Electrical Equipment-General § 77.513 Insulating mats at power switches. Dry wooden... switchboards and power-control switches where shock hazards exist. However, metal plates on which a person...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

30 CFR 77.513 - Insulating mats at power switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Insulating mats at power switches. 77.513... COAL MINES Electrical Equipment-General § 77.513 Insulating mats at power switches. Dry wooden... switchboards and power-control switches where shock hazards exist. However, metal plates on which a person...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

30 CFR 77.513 - Insulating mats at power switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Insulating mats at power switches. 77.513... COAL MINES Electrical Equipment-General § 77.513 Insulating mats at power switches. Dry wooden... switchboards and power-control switches where shock hazards exist. However, metal plates on which a person...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

Simulation and Analysis of Electric Field for the Disconnector Switch Incomplete Opening Position Based on 220kV GIS

NASA Astrophysics Data System (ADS)

Wang, Feifeng; Huang, Huimin; Su, Yi; Yan, Dandan; Lu, Yufeng; Xia, Xiaofei; Yang, Jian

2018-05-01

It has accounted for a large proportion of GIS equipment defects, which cause the disconnector switches to incomplete open-close position. Once opening operation is not in place, it will arouse continuous arcing between contacts to reduce insulation strength. Otherwise, the intense heat give rise to burn the contact, which has a severe effect on the safe operation of power grid. This paper analyzes some typical defection cases about the opening operation incomplete for disconnector switches of GIS. The COMSOL Multiphysics is applied to verify the influence on electric field distribution. The results show that moving contact out shield is 20 mm, the electric field distribution of the moving contact surface is uneven, and the maximum electric field value can reach 9.74 kV/mm.

76 FR 53326 - Airworthiness Directives; Eurocopter France (ECF) Model EC120B Helicopters

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-26

... also requires modifying the emergency switch electrical wiring and performing tests to ensure correct... the RFM after modifying the emergency switch electrical wiring and performing tests to ensure correct... likely to exist or develop on other helicopters of the same type design. Differences Between This AD and...

Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

PubMed

Liu, Gang; Ling, Qi-Dan; Teo, Eric Yeow Hwee; Zhu, Chun-Xiang; Chan, D Siu-Hung; Neoh, Koon-Gee; Kang, En-Tang

2009-07-28

By varying the carbon nanotube (CNT) content in poly(N-vinylcarbazole) (PVK) composite thin films, the electrical conductance behavior of an indium-tin oxide/PVK-CNT/aluminum (ITO/PVK-CNT/Al) sandwich structure can be tuned in a controlled manner. Distinctly different electrical conductance behaviors, such as (i) insulator behavior, (ii) bistable electrical conductance switching effects (write-once read-many-times (WORM) memory effect and rewritable memory effect), and (iii) conductor behavior, are discernible from the current density-voltage characteristics of the composite films. The turn-on voltage of the two bistable conductance switching devices decreases and the ON/OFF state current ratio of the WORM device increases with the increase in CNT content of the composite film. Both the WORM and rewritable devices are stable under a constant voltage stress or a continuous pulse voltage stress, with an ON/OFF state current ratio in excess of 10(3). The conductance switching effects of the composite films have been attributed to electron trapping in the CNTs of the electron-donating/hole-transporting PVK matrix.

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

NASA Astrophysics Data System (ADS)

Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-12-01

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

DOE PAGES

Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; ...

2015-09-08

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

High dynamic range charge measurements

DOEpatents

De Geronimo, Gianluigi

2012-09-04

A charge amplifier for use in radiation sensing includes an amplifier, at least one switch, and at least one capacitor. The switch selectively couples the input of the switch to one of at least two voltages. The capacitor is electrically coupled in series between the input of the amplifier and the input of the switch. The capacitor is electrically coupled to the input of the amplifier without a switch coupled therebetween. A method of measuring charge in radiation sensing includes selectively diverting charge from an input of an amplifier to an input of at least one capacitor by selectively coupling an output of the at least one capacitor to one of at least two voltages. The input of the at least one capacitor is operatively coupled to the input of the amplifier without a switch coupled therebetween. The method also includes calculating a total charge based on a sum of the amplified charge and the diverted charge.

Tablet based distributed intelligent load management

DOEpatents

Lu, Yan; Zhou, Siyuan

2018-01-09

A facility is connected to an electricity utility and is responsive to Demand Response Events. A plurality of devices is each individually connected to the electricity grid via an addressable switch connected to a secure network that is enabled to be individually switched off by a server. An occupant of a room in control of the plurality of devices provides via a Human Machine Interface on a tablet a preferred order of switching off the plurality of devices in case of a Demand Response Event. A configuration file based at least partially on the preferred order and on a severity of the Demand Response Events determines which devices which of the plurality devices will be switched off. The server accesses the configuration file and switches off the devices included in the configuration file.

A mobile Sn nanowire inside a β-Ga2 O3 tube: a practical nanoscale electrically/thermally driven switch.

PubMed

Zou, Rujia; Zhang, Zhenyu; Tian, Qiwei; Ma, Guanxing; Song, Guosheng; Chen, Zhigang; Hu, Junqing

2011-12-02

Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based on a mobile Sn nanowire inside a β-Ga2 O3 tube. The melting point of Sn inside the Ga2 O3 tube is found to be as low as 58 °C-far below the value of bulk Sn (231.89 °C)-and its crystal phase (β-Sn) remains unchanged even at temperatures as low as -170 °C. Thus a miniaturization of the unique wide-temperature-range thermometer based on the linear thermal expansion of liquid Sn fillings in the Ga2 O3 tube is realized. In addition, the electrical properties of the Sn-nanowire-filled β-Ga2 O3 tubes are carefully determined: importantly, the resistance demonstrates a sudden drop (rise) when two Sn nanowires contact (separate), due to the thermally driven motion of the liquid Sn fillings inside the tube. Thus this structure can be switched between its on and off states by controlling the motion, merging or splitting, of the Sn nanowires inside the tube, either electrically, by applying a current, or thermally, at a predetermined temperature. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

30 CFR 57.12041 - Design of switches and starting boxes.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Design of switches and starting boxes. 57.12041 Section 57.12041 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12041 Design of switches and starting boxes. Switches and starting...

30 CFR 57.12041 - Design of switches and starting boxes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of switches and starting boxes. 57.12041 Section 57.12041 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12041 Design of switches and starting boxes. Switches and starting...

30 CFR 57.12041 - Design of switches and starting boxes.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Design of switches and starting boxes. 57.12041 Section 57.12041 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12041 Design of switches and starting boxes. Switches and starting...

30 CFR 57.12041 - Design of switches and starting boxes.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Design of switches and starting boxes. 57.12041 Section 57.12041 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12041 Design of switches and starting boxes. Switches and starting...

30 CFR 57.12041 - Design of switches and starting boxes.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Design of switches and starting boxes. 57.12041 Section 57.12041 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND... Electricity Surface and Underground § 57.12041 Design of switches and starting boxes. Switches and starting...

Electrical and switching properties of the Se 90Te 10-xAg x (0⩽ x⩽6) films

NASA Astrophysics Data System (ADS)

Afifi, M. A.; Hegab, N. A.; Bekheet, A. E.; Sharaf, E. R.

2009-08-01

Amorphous Se 90Te 10-xAg x (0⩽ x⩽6) films are obtained by thermal evaporation technique under vacuum from the synthesized bulk materials on pyrographite and glass substrates. X-ray analysis shows the amorphous nature of the obtained films. The dc electrical conductivity was studied for different thicknesses (165-711 nm) as a function of temperature in the range (298-323 K) below the corresponding T g for the studied films. The obtained results show that the conduction activation energy has a single value through the investigated range of temperature which can be explained in accordance with Mott and Davis model. The I- V characteristic curves for the film compositions are found to be typical for a memory switch. The mean value of the threshold voltage Vbar increases linearly with increasing film thickness (165-711 nm), while it decreases exponentially with increasing temperature in the investigated range for the studied compositions. The results are explained in accordance with the electrothermal model for the switching process. The effect of Ag on the studied parameters is also investigated.

Electrically operated magnetic switch designed to display reduced leakage inductance

DOEpatents

Cook, E.G.

1994-05-10

An electrically operated magnetic switch is disclosed herein for use in opening and closing a circuit between two terminals depending upon the voltage across these terminals. The switch so disclosed is comprised of a ferrite core in the shape of a toroid having opposing ends and opposite inner and outer sides and an arrangement of electrically conductive components defining at least one current flow path which makes a number of turns around the core. This arrangement of components includes a first plurality of electrically conducive rigid rods parallel with and located outside the outer side of the core and a second plurality of electrically conductive rigid rods parallel with and located inside the inner side of the core. The arrangement also includes means for electrically connecting these rods together so that the define the current flow path. In one embodiment, this latter means uses rigid cross-tab means. In another, preferred embodiment, printed circuits on rigid dielectric substrates located on opposite ends of the core are utilized to interconnect the rods together. 10 figures.

Inversion of ferrimagnetic magnetization by ferroelectric switching via a novel magnetoelectric coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weng, Yakui; Lin, Lingfang; Dagotto, Elbio

2016-07-12

Although several multiferroic materials or heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial magnetoelectric coupling based on three components (ferroelectric dipole, magnetic moment, and antiferromagnetic order) is analytically formulated. As an extension of carrier-mediated magnetoelectricity, the new coupling is shown to induce an electric-magnetic hysteresis loop. In addition, realizations employing BiFeO 3 bilayers grown along the [111] axis are proposed. Without involving magnetic phase transitions, the magnetization orientation can be switched by the carrier modulation driven by the field effect, as confirmed using first-principles calculations.

Easily-wired toggle switch

NASA Technical Reports Server (NTRS)

Dean, W. T.; Stringer, E. J.

1979-01-01

Crimp-type connectors reduce assembly and disassembly time. With design, no switch preparation is necessary and socket contracts are crimped to wires inserted in module attached to back of toggle switch engaging pins inside module to make electrical connections. Wires are easily removed with standard detachment tool. Design can accommodate wires of any gage and as many terminals can be placed on switch as wire gage and switch dimensions will allow.

A pelvic motion driven electrical stimulator for drop-foot treatment.

PubMed

Chen, Shih-Wei; Chen, Shih-Ching; Chen, Chiun-Fan; Lai, Jin-Shin; Kuo, Te-Son

2009-01-01

Foot switches operating with force sensitive resistors placed in the shoe sole were considered as an effective way for driving FES assisted walking systems in gait restoration. However, the reliability and durability of the foot switches run down after a certain number of steps. As an alternative for foot switches, a simple, portable, and easy to handle motion driven electrical stimulator (ES) is provided for drop foot treatment. The device is equipped with a single tri-axis accelerometer worn on the pelvis, a commercial dual channel electrical stimulator, and a controller unit. By monitoring the pelvic rotation and acceleration during a walking cycle, the events including heel strike and toe off of each step is thereby predicted by a post-processing neural network model.

A thermal sensor and switch based on a plasma polymer/ZnO suspended nanobelt bimorph structure

NASA Astrophysics Data System (ADS)

He, -Hau, Jr.; Singamaneni, Srikanth; Ho, Chih H.; Lin, Yen-Hsi; McConney, Michael E.; Tsukruk, Vladimir V.

2009-02-01

The combination of design and subsequent fabrication of organic/inorganic nanostructures creates an effective way to combine the favorable traits of both to achieve a desired device performance. We demonstrate a miniature electrical read-out, and a sensitive temperature sensor/switch, based on a ZnO nanobelt/plasma-polymerized benzonitrile bimorph structure. A new read-out technique based on the change in the electric current flowing through the bimorph and the contact pad has been employed, replacing the conventional cumbersome piezoresistive method or tedious optical alignment. The thermal sensor demonstrated here has great prospects for thermal switching and triggered detection owing to the relative ease in the fabrication of arrays and the direct electrical read-out.

Electro-optic harmonic conversion to switch a laser beam out of a cavity

DOEpatents

Haas, Roger A.; Henesian, Mark A.

1987-01-01

The invention is a switch to permit a laser beam to escape a laser cavity through the use of an externally applied electric field across a harmonic conversion crystal. Amplification takes place in the laser cavity, and then the laser beam is switched out by the laser light being harmonically converted with dichroic or polarization sensitive elements present to alter the optical path of the harmonically converted laser light. Modulation of the laser beam can also be accomplished by varying the external electric field.

Electrical motor/generator drive apparatus and method

DOEpatents

Su, Gui Jia

2013-02-12

The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

Variable reluctance switch avoids contact corrosion and contact bounce

NASA Technical Reports Server (NTRS)

Watson, P. C.

1967-01-01

Variable reluctance switch avoids contact corrosion and bounce in a hostile environment. It consists of a wire-wound magnetic core and moveable bridge piece that alters the core flux pattern to produce an electrical output useful for switching control media.

Electric-field-induced magnetic domain writing in a Co wire

NASA Astrophysics Data System (ADS)

Tanaka, Yuki; Hirai, Takamasa; Koyama, Tomohiro; Chiba, Daichi

2018-05-01

We have demonstrated that the local magnetization in a Co microwire can be switched by an application of a gate voltage without using any external magnetic fields. The electric-field-induced reversible ferromagnetic phase transition was used to realize this. An internal stray field from a ferromagnetic gate electrode assisted the local domain reversal in the Co wire. This new concept of electrical domain switching may be useful for dramatically reducing the power consumption of writing information in a magnetic racetrack memory, in which a shift of a magnetic domain by electric current is utilized.

The 4 phase VSR motor: The ideal prime mover for electric vehicles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holling, G.H.; Yeck, M.M.

1994-12-31

4 phase variable switched reluctance motors are gaining acceptance in many applications due to their fault tolerant characteristics. A 4 phase variable switched reluctance motor (VSR) is modelled and its performance is predicted for several operating points for an electric vehicle application. The 4 phase VSR offers fault tolerance, high performance, and an excellent torque to weight ratio. The actual system performance was measured both on a teststand and on an actual vehicle. While the system described is used in a production electric motorscooter, the technology is equally applicable for high efficiency electric cars and buses. 4 refs.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Shipboard Calibration Network Extension Utilizing COTS Products

DTIC Science & Technology

2014-09-01

to emulate the MCS system console. C. KEYBOARD VIDEO AND MOUSE (KVM) SWITCH A ServSwitch Wizard IP Plus KVM switch is used to allow remote access...9 C. KEYBOARD VIDEO AND MOUSE (KVM) SWITCH .......................... 10 D. ROUTER...mechanical, and electrical KVM Keyboard Video and Mouse LAN Local Area Network MCS Machinery Control Systems NIST National Institute of Standards and

Effect of bipolar electric fatigue on polarization switching in lead-zirconate-titanate ceramics

NASA Astrophysics Data System (ADS)

Zhukov, Sergey; Fedosov, Sergey; Glaum, Julia; Granzow, Torsten; Genenko, Yuri A.; von Seggern, Heinz

2010-07-01

From comparison of experimental results on polarization switching in fresh and electrically fatigued lead-zirconate-titanate (PZT) over a wide range of applied fields and switching times it is concluded that fatigue alters the local field distribution inside the sample due to the generation of discrete defects, such as voids and cracks. Such defects have a strong influence on the overall electric field distribution by their shape and dielectric permittivity. On this hypothesis, a new phenomenological model of polarization switching in fatigued PZT is proposed. The model assumes that the fatigued sample can be composed of different local regions which exhibit different field strengths but otherwise can be considered as unfatigued. Consequently the temporal response of a fatigued sample is assumed to be the superposition of the field-dependent temporal responses of unfatigued samples weighted by their respective volume fraction. A certain part of the volume is excluded from the overall switching process due to the domain pinning even at earlier stages of fatigue, which can be recovered by annealing. Suitability of the proposed model is demonstrated by a good correlation between experimental and calculated data for differently fatigued samples. Plausible cause of the formation of such regions is the generation of defects such as microcracks and the change in electrical properties at imperfections such as pores or voids.

Resistive switching phenomena: A review of statistical physics approaches

DOE PAGES

Lee, Jae Sung; Lee, Shinbuhm; Noh, Tae Won

2015-08-31

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor inmore » determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Controller, circuit; switch. 236.732 Section 236.732 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a...

Arc-Free High-Power dc Switch

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

High-Speed, high-power, switching transistor

NASA Technical Reports Server (NTRS)

Carnahan, D.; Ohu, C. K.; Hower, P. L.

1979-01-01

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

Vibration reduction for smart periodic structures via periodic piezoelectric arrays with nonlinear interleaved-switched electronic networks

NASA Astrophysics Data System (ADS)

Bao, Bin; Guyomar, Daniel; Lallart, Mickaël

2017-01-01

Smart periodic structures covered by periodically distributed piezoelectric patches have drawn more and more attention in recent years for wave propagation attenuation and corresponding structural vibration suppression. Since piezoelectric materials are special type of energy conversion materials that link mechanical characteristics with electrical characteristics, shunt circuits coupled with such materials play a key role in the wave propagation and/or vibration control performance in smart periodic structures. Conventional shunt circuit designs utilize resistive shunt (R-shunt) and resonant shunt (RL-shunt). More recently, semi-passive nonlinear approaches have also been developed for efficiently controlling the vibrations of such structures. In this paper, an innovative smart periodic beam structure with nonlinear interleaved-switched electric networks based on synchronized switching damping on inductor (SSDI) is proposed and investigated for vibration reduction and wave propagation attenuation. Different from locally resonant band gap mechanism forming narrow band gaps around the desired resonant frequencies, the proposed interleaved electrical networks can induce new broadly low-frequency stop bands and broaden primitive Bragg stop bands by virtue of unique interleaved electrical configurations and the SSDI technique which has the unique feature of realizing automatic impedance adaptation with a small inductance. Finite element modeling of a Timoshenko electromechanical beam structure is also presented for validating dispersion properties of the structure. Both theoretical and experimental results demonstrate that the proposed beam structure not only shows better vibration and wave propagation attenuation than the smart beam structure with independent switched networks, but also has technical simplicity of requiring only half of the number of switches than the independent switched network needs.

A sub-femtojoule electrical spin-switch based on optically trapped polariton condensates.

PubMed

Dreismann, Alexander; Ohadi, Hamid; Del Valle-Inclan Redondo, Yago; Balili, Ryan; Rubo, Yuri G; Tsintzos, Simeon I; Deligeorgis, George; Hatzopoulos, Zacharias; Savvidis, Pavlos G; Baumberg, Jeremy J

2016-10-01

Practical challenges to extrapolating Moore's law favour alternatives to electrons as information carriers. Two promising candidates are spin-based and all-optical architectures, the former offering lower energy consumption, the latter superior signal transfer down to the level of chip-interconnects. Polaritons-spinor quasi-particles composed of semiconductor excitons and microcavity photons-directly couple exciton spins and photon polarizations, combining the advantages of both approaches. However, their implementation for spintronics has been hindered because polariton spins can be manipulated only optically or by strong magnetic fields. Here we use an external electric field to directly control the spin of a polariton condensate, bias-tuning the emission polarization. The nonlinear spin dynamics offers an alternative route to switching, allowing us to realize an electrical spin-switch exhibiting ultralow switching energies below 0.5 fJ. Our results lay the foundation for development of devices based on the electro-optical control of coherent spin ensembles on a chip.

Design of a tunable graphene plasmonic-on-white graphene switch at infrared range

NASA Astrophysics Data System (ADS)

Farmani, Ali; Zarifkar, Abbas; Sheikhi, Mohammad H.; Miri, Mehdi

2017-12-01

A tunable Y-branch graphene plasmonic switch operating at the wavelength of 1.55 μm is proposed in which graphene is placed on white graphene. The switch structure is investigated analytically and numerically by the finite difference time domain method. The graphene plasmonic switch considered here supports both transverse magnetic and transverse electric graphene plasmons whose propagation characteristics can be controlled by modulating the external electric field and the temperature of graphene. Our calculations show that by strong coupling between the incident waves and the graphene plasmons of the structure, a high polarization extinction ratio of 45 dB and relatively large bandwidth of 150 nm around the central wavelength of 1.55 μm are achievable. Furthermore, the application of white graphene as the substrate of graphene decreases the propagation loss of the graphene plasmons and the required applied electric field. It is also shown that the propagation mode of the graphene plasmons can be tuned by changing the temperature and the calculated threshold temperature is 650 K.

Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Hongguang, E-mail: chenghg7932@gmail.com; Deng, Ning

2013-12-15

We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10{sup −9} can be achieved for the device of thermalmore » stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.« less

Improved Thermal-Switch Disks Protect Batteries

NASA Technical Reports Server (NTRS)

Darcy, Eric; Bragg, Bobby

1990-01-01

Improved thermal-switch disks help protect electrical batteries against high currents like those due to short circuits or high demands for power in circuits supplied by batteries. Protects batteries against excessive temperatures. Centered by insulating fiberglass washer. Contains conductive polymer that undergoes abrupt increase in electrical resistance when excessive current raises its temperature above specific point. After cooling, polymer reverts to low resistance. Disks reusable.

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

PubMed Central

Song, Ji-Min; Lee, Jang-Sik

2016-01-01

Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque

NASA Astrophysics Data System (ADS)

Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.

2018-05-01

Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.

Electrically controllable photonic molecule laser.

PubMed

Fasching, G; Deutsch, Ch; Benz, A; Andrews, A M; Klang, P; Zobl, R; Schrenk, W; Strasser, G; Ragulis, P; Tamosiūnas, V; Unterrainer, K

2009-10-26

We have studied the coherent intercavity coupling of the evanescent fields of two microdisk terahertz quantum-cascade lasers. The electrically controllable optical coupling of the single-mode operating lasers has been observed for cavity spacings up to 30 mum. The strongest coupled photonic molecule with 2 mum intercavity spacing allows to conditionally switch the optical emission by the electrical modulation of only one microdisk. The lasing threshold characteristics demonstrate the linear dependence of the gain of a quantum-cascade laser on the applied electric field.

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

M113 Electric Land Drive Demonstration Project. Volume 1: Vehicle Systems Design and Integration

DTIC Science & Technology

1992-08-01

pickup for L-final drive output speed MP-5 Magnetic pickup for engine speed Pressure Switches PS-I Pressure switch for gearbox pressure (5 lb/in2 ) PS...2 Pressure switch for ac generator pressure (5 lb/in 2 ) PS-3 Pressure switch for dc generator pressure (5 lb/in2 ) PS-4 Pressure switch for ac...generator-i scavenge pressure (5 lb/in 2 ) PS-5 Pressure switch for ac generator-2 scavenge pressure (5 lb/in2 ) PS-6 Pressure switch for engine

Anti-parallel polarization switching in a triglycine sulfate organic ferroelectric insulator: The role of surface charges

NASA Astrophysics Data System (ADS)

Ma, He; Wu, Zhuangchun; Peng, Dongwen; Wang, Yaojin; Wang, Yiping; Yang, Ying; Yuan, Guoliang

2018-04-01

Four consecutive ferroelectric polarization switchings and an abnormal ring-like domain pattern can be introduced by a single tip bias of a piezoresponse force microscope in the (010) triglycine sulfate (TGS) crystal. The external electric field anti-parallel to the original polarization induces the first polarization switching; however, the surface charges of TGS can move toward the tip location and induce the second polarization switching once the tip bias is removed. The two switchings allow a ring-like pattern composed of the central domain with downward polarization and the outer domain with upward polarization. Once the two domains disappear gradually as a result of depolarization, the other two polarization switchings occur one by one at the TGS where the tip contacts. However, the backswitching phenomenon does not occur when the external electric field is parallel to the original polarization. These results can be explained according to the surface charges instead of the charges injected inside.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

Fundamental studies on initiation and evolution of multi-channel discharges and their application to next generation pulsed power machines.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwarz, Jens; Savage, Mark E.; Lucero, Diego Jose

Future pulsed power systems may rely on linear transformer driver (LTD) technology. The LTD's will be the building blocks for a driver that can deliver higher current than the Z-Machine. The LTD's would require tens of thousands of low inductance ( %3C 85nH), high voltage (200 kV DC) switches with high reliability and long lifetime ( 10 4 shots). Sandia's Z-Machine employs 36 megavolt class switches that are laser triggered by a single channel discharge. This is feasible for tens of switches but the high inductance and short switch life- time associated with the single channel discharge are undesirable formore » future machines. Thus the fundamental problem is how to lower inductance and losses while increasing switch life- time and reliability. These goals can be achieved by increasing the number of current-carrying channels. The rail gap switch is ideal for this purpose. Although those switches have been extensively studied during the past decades, each effort has only characterized a particular switch. There is no comprehensive understanding of the underlying physics that would allow predictive capability for arbitrary switch geometry. We have studied rail gap switches via an extensive suite of advanced diagnostics in synergy with theoretical physics and advanced modeling capability. Design and topology of multichannel switches as they relate to discharge dynamics are investigated. This involves electrically and optically triggered rail gaps, as well as discrete multi-site switch concepts.« less

Ferroelectric molecular field-switch based on double proton transfer process: Static and dynamical simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rode, Michał F.; Sobolewski, Andrzej L.; Jankowska, Joanna

2016-04-07

In this work, we present a reversible ferroelectric molecular switch controlled by an external electric field. The studied (2Z)-1-(6-((Z)-2-hydroxy-2-phenylvinyl)pyridin-3-yl)-2-(pyridin-2(1H) -ylidene)ethanone (DSA) molecule is polarized by two uniaxial intramolecular hydrogen bonds. Two protons can be transferred along hydrogen bonds upon an electric field applied along the main molecular axis. The process results in reversion of the dipole moment of the system. Static ab initio and on-the-fly dynamical simulations of the DSA molecule placed in an external electric field give insight into the mechanism of the double proton transfer (DPT) in the system and allow for estimation of the time scale ofmore » this process. The results indicate that with increasing strength of the electric field, the step-wise mechanism of DPT changes into the downhill barrierless process in which the synchronous and asynchronous DPTs compete with each other.« less

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Self-testing security sensor for monitoring closure of vault doors and the like

DOEpatents

Cawthorne, Duane C.

1997-05-27

A self-testing device is provided for a monitoring system for monitoring whether a closure member such as a door or window is closed. The monitoring system includes a switch unit mounted on the frame of the closure member being monitored and including magnetically biased switches connected in one or more electrical monitoring circuits, and a door magnet unit mounted on the closure member being monitored. The door magnet includes one or more permanent magnets that produce a magnetic field which, when the closure member is closed, cause said switches to assume a first state. When the closure member is opened, the switches switch to a second, alarm state. The self-testing device is electrically controllable from a remote location and produces a canceling or diverting magnetic field which simulates the effect of movement of the closure member from the closed position thereof without any actual movement of the member.

Self-testing security sensor for monitoring closure of vault doors and the like

DOEpatents

Cawthorne, D.C.

1997-05-27

A self-testing device is provided for a monitoring system for monitoring whether a closure member such as a door or window is closed. The monitoring system includes a switch unit mounted on the frame of the closure member being monitored and including magnetically biased switches connected in one or more electrical monitoring circuits, and a door magnet unit mounted on the closure member being monitored. The door magnet includes one or more permanent magnets that produce a magnetic field which, when the closure member is closed, cause said switches to assume a first state. When the closure member is opened, the switches switch to a second, alarm state. The self-testing device is electrically controllable from a remote location and produces a canceling or diverting magnetic field which simulates the effect of movement of the closure member from the closed position thereof without any actual movement of the member. 5 figs.

Life-cycle assessment of electricity generation systems and applications for climate change policy analysis

NASA Astrophysics Data System (ADS)

Meier, Paul Joseph

This research uses Life-Cycle Assessment (LCA) to better understand the energy and environmental performance for two electricity generation systems, a 620 MW combined-cycle natural gas plant, and an 8kW building-integrated photovoltaic system. The results of the LCA are used to provide an effective and accurate means for evaluating greenhouse gas emission reduction strategies for U.S. electricity generation. The modern combined-cycle plant considered in this thesis is nominally 48% thermally efficient, but it is only 43% energy efficient when evaluated across its entire life-cycle, due primarily to energy losses during the natural gas fuel cycle. The emission rate for the combined-cycle natural gas plant life-cycle (469 tonnes CO2-equivalent per GWeh), was 23% higher than the emission rate from plant operation alone (382 tonnes CO2-equivalent per GWeh). Uncertainty in the rate of fuel-cycle methane releases results in a potential range of emission rates between 457 to 534 tonnes CO 2-equivalent per GWeh for the studied plant. The photovoltaic system modules have a sunlight to DC electricity conversion efficiency of 5.7%. However, the system's sunlight to AC electricity conversion efficiency is 4.3%, when accounting for life-cycle energy inputs, as well as losses due to system wiring, AC inversion, and module degradation. The LCA illustrates that the PV system has a low, but not zero, life-cycle greenhouse gas emission rate of 39 Tonnes CO2-equivalent per GWeh. A ternary method of evaluation is used to evaluate three greenhouse gas mitigation alternatives: (1) fuel-switching from coal to natural gas for Kyoto-based compliance, (2) fuel-switching from coal to nuclear/renewable for Kyoto based compliance, and (3) fuel-switching to meet the White House House's Global Climate Change Initiative. In a moderate growth scenario, fuel-switching from coal to natural gas fails to meet a Kyoto-based emission target, while fuel-switching to nuclear/renewable meets the emission objective by reducing coal generated electricity 32% below 2000 levels. The Global Climate Change Initiative allows annual greenhouse gas emissions to increase to levels that are 54% higher than the proposed U.S. commitment under the Kyoto Protocol.

Control system of mutually coupled switched reluctance motor drive of mining machines in generator mode

NASA Astrophysics Data System (ADS)

Ivanov, A. S.; Kalanchin, I. Yu; Pugacheva, E. E.

2017-09-01

One of the first electric motors, based on the use of electromagnets, was a reluctance motor in the XIX century. Due to the complexities in the implementation of control system the development of switched reluctance electric machines was repeatedly initiated only in 1960 thanks to the development of computers and power electronic devices. The main feature of these machines is the capacity to work both in engine mode and in generator mode. Thanks to a simple and reliable design in which there is no winding of the rotor, commutator, permanent magnets, a reactive gate-inductor electric drive operating in the engine mode is actively being introduced into various areas such as car industry, production of household appliances, wind power engineering, as well as responsible production processes in the oil and mining industries. However, the existing shortcomings of switched reluctance electric machines, such as nonlinear pulsations of electromagnetic moment, the presence of three or four phase supply system and sensor of rotor position prevent wide distribution of this kind of electric machines.

Segway CMBalance Robot Soccer Player

DTIC Science & Technology

2004-05-01

Electrical pressure switch • (1) Onboard air compressor Figure .13 Pressure vs. Force Plot of a ¾ inch Bore Pneumatic Cylinder Two cylinders were used...mechanical pressure switch that opens at 150 psi. When the controller detects that the switch has closed, the compressor is turned off. As a

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main power circuits; disconnecting switches. 75... MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Electrical Equipment-General § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits...

Reflective HTS switch

DOEpatents

Martens, Jon S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.

1994-01-01

A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

14 CFR 27.1307 - Miscellaneous equipment.

Code of Federal Regulations, 2010 CFR

2010-01-01

... safety belt for each occupant. (c) A master switch arrangement. (d) An adequate source of electrical energy, where electrical energy is necessary for operation of the rotorcraft. (e) Electrical protective...

14 CFR 27.1307 - Miscellaneous equipment.

Code of Federal Regulations, 2011 CFR

2011-01-01

... safety belt for each occupant. (c) A master switch arrangement. (d) An adequate source of electrical energy, where electrical energy is necessary for operation of the rotorcraft. (e) Electrical protective...

Improving electrical power systems reliability through locally controlled distributed curtailable load

NASA Astrophysics Data System (ADS)

Dehbozorgi, Mohammad Reza

2000-10-01

Improvements in power system reliability have always been of interest to both power companies and customers. Since there are no sizable electrical energy storage elements in electrical power systems, the generated power should match the load demand at any given time. Failure to meet this balance may cause severe system problems, including loss of generation and system blackouts. This thesis proposes a methodology which can respond to either loss of generation or loss of load. It is based on switching of electric water heaters using power system frequency as the controlling signal. The proposed methodology encounters, and the thesis has addressed, the following associated problems. The controller must be interfaced with the existing thermostat control. When necessary to switch on loads, the water in the tank should not be overheated. Rapid switching of blocks of load, or chattering, has been considered. The contributions of the thesis are: (A) A system has been proposed which makes a significant portion of the distributed loads connected to a power system to behave in a predetermined manner to improve the power system response during disturbances. (B) The action of the proposed system is transparent to the customers. (C) The thesis proposes a simple analysis for determining the amount of such loads which might be switched and relates this amount to the size of the disturbances which can occur in the utility. (D) The proposed system acts without any formal communication links, solely using the embedded information present system-wide. (E) The methodology of the thesis proposes switching of water heater loads based on a simple, localized frequency set-point controller. The thesis has identified the consequent problem of rapid switching of distributed loads, which is referred to as chattering. (F) Two approaches have been proposed to reduce chattering to tolerable levels. (G) A frequency controller has been designed and built according to the specifications required to switch electric water heater loads in response to power system disturbances. (H) A cost analysis for building and installing the distributed frequency controller has been carried out. (I) The proposed equipment and methodology has been implemented and tested successfully. (Abstract shortened by UMI.)

Temperature-dependent resistance switching in SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-kun; University of Chinese Academy of Sciences, Beijing 100049; Ma, Chao

2016-06-13

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switchingmore » effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.« less

Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Lourembam, James; Huang, Jiancheng; Lim, Sze Ter; Gerard, Ernult Franck

2018-05-01

We report a comprehensive study on the role of the free layer thickness (tF) in electric-field controlled nanoscale perpendicular magnetic tunnel junctions (MTJs), comprising of free layer structure Ta/Co40Fe40B20/MgO, by using dc magnetoresistance and ultra-short magnetization switching measurements. Focusing on MTJs that exhibits positive effective device anisotropy (Keff), we observe that both the voltage-controlled magnetic anisotropy (ξ) and voltage modulation of coercivity show strong dependence on tF. We found that ξ varies dramatically and unexpectedly from ˜-3 fJ/V-m to ˜-41 fJ/V-m with increasing tF. We discuss the possibilities of electric-field tuning of the effective surface anisotropy term, KS as well as an additional interfacial magnetoelastic anisotropy term, K3 that scales with 1 /tF2. Voltage pulse induced 180° magnetization reversal is also demonstrated in our MTJs. Unipolar switching and oscillatory function of switching probability vs. pulse duration can be observed at higher tF, and agrees well with the two key device parameters — Keff and ξ.

Ultrafast Manipulation of Magnetic Order with Electrical Pulses

NASA Astrophysics Data System (ADS)

Yang, Yang

During the last 30 years spintronics has been a very rapidly expanding field leading to lots of new interesting physics and applications. As with most technology-oriented fields, spintronics strives to control devices with very low energy consumption and high speed. The combination of spin and electronics inherent to spintronics directly tackles energy efficiency, due to the non-volatility of magnetism. However, speed of operation of spintronic devices is still rather limited ( nanoseconds), due to slow magnetization precessional frequencies. Ultrafast magnetism (or opto-magnetism) is a relatively new field that has been very active in the last 20 years. The main idea is that intense femtosecond laser pulses can be used in order to manipulate the magnetization at very fast time-scales ( 100 femtoseconds). However, the use of femtosecond lasers poses great application challenges such as diffraction limited optical spot sizes which hinders device density, and bulky and expensive integration of femtosecond lasers into devices. In this thesis, our efforts to combine ultrafast magnetism and spintronics are presented. First, we show that the magnetization of ferrimagnetic GdFeCo films can be switched by picosecond electronic heat current pulses. This result shows that a non-thermal distribution of electrons directly excited by laser is not necessary for inducing ultrafast magnetic dynamics. Then, we fabricate photoconductive switch devices on a LT-GaAs substrate, to generate picosecond electrical pulses. Intense electrical pulses with 10ps (FWHM) duration and peak current up to 3A can be generated and delivered into magnetic films. Distinct magnetic dynamics in CoPt films are found between direct optical heating and electrical heating. More importantly, by delivering picosecond electrical pulses into GdFeCo films, we are able to deterministically reverse the magnetization of GdFeCo within 10ps. This is more than one order of magnitude faster than any other electrically controlled magnetic switching. Our results present a fundamentally new switching mechanism electrically, without requirement for any spin polarized current or spin transfer/orbit torques. Our discovery that ultrafast magnetization switching can be achieved with electrical pulses will launch a new frontier of spintronics science and herald a new generation of spintronic devices that operate at high speed with low energy consumption. At last, to push ultrafast spintronics to practical use, ultrafast switching of a ferromagnetic film is desired. By exploiting the exchange interaction between GdFeCo and ferromagnetic Co/Pt layer, we achieved ultrafast (sub 10ps) switching of ferromagnetic film with a single laser pulse. This result will open up the possibility to control ferromagnetic materials at ultrafast time scale, critical for practical applications.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Free microparticles—An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers

NASA Astrophysics Data System (ADS)

Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

2018-03-01

Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

Free microparticles-An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers.

PubMed

Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

2018-03-01

Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

Reflective HTS switch

DOEpatents

Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

1994-09-27

A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

Passive electrically switchable circuit element having improved tunability and method for its manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickel, Patrick R; James, Conrad D

2014-09-16

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

DETAIL OF CONNECTION TO SWITCH POINTS OF TURNOUT 29, LOOKING ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

DETAIL OF CONNECTION TO SWITCH POINTS OF TURNOUT 29, LOOKING EAST. SILVER BOX HOUSES ELECTRICAL CONTACTS FOR POSITION FEEDBACK TO SIGNAL CIRCUITS. SHEET METAL COVERS GAS-FIRED SWITCH HEATER FOR FREEZE PROTECTION IN WINTER. - Baltimore & Ohio Railroad, Z Tower, State Route 46, Keyser, Mineral County, WV

In-plane only retardation switching by certain type of smectic liquid crystal panels

NASA Astrophysics Data System (ADS)

Mochizuki, Akihiro

2018-02-01

A certain type of smectic C phase liquid crystal material panel shows in-plane only retardation switching during its electric field applied driving. This paper explains some chronological approach how such an interesting phenomenon was found and how the in-plane only retardation switching was verified.

Metasurface quantum-cascade laser with electrically switchable polarization

DOE PAGES

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.; ...

2017-04-20

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Metasurface quantum-cascade laser with electrically switchable polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Study on the transient properties of amorphous solar cells

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2016-05-01

The transient response for the solar cell when switched off from steady-state can provide useful information about the quality of the material used for fabrication of the device. In this paper we shall discuss the photovoltaic transients of amorphous silicon solar cells when switched off from open circuit configuration and illuminated by electrical pulse. The open-circuit voltage (Voc) decay can be performed by two methods, by optical excitation and by electrical pulse. When one of carriers has a concentration much higher than the other the photoconductivity is dominated by majority carriers; in that case the Voc decay which depends on the np product can be used as complementary method for obtaining information about the minority carriers. Also the series resistance drop in an electrical Voc decay method can be used to obtain a IJ't product as an additional information regarding the material of the device.

Frequency dependent polarisation switching in h-ErMnO3

NASA Astrophysics Data System (ADS)

Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan

2018-04-01

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5-6 μC/cm2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits.

PubMed

Lu, Yegang; Stegmaier, Matthias; Nukala, Pavan; Giambra, Marco A; Ferrari, Simone; Busacca, Alessandro; Pernice, Wolfram H P; Agarwal, Ritesh

2017-01-11

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition between amorphous and crystalline states. We perform time-resolved measurements of the transient change in both the optical transmission and resistance of the nanowire and show reversible switching operations in both the optical and the electrical domains. Our results pave the way toward on-chip multifunctional optoelectronic integrated devices, waveguide integrated memories, and hybrid processing applications.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells

NASA Astrophysics Data System (ADS)

Duan, W. J.; Wang, J. B.; Zhong, X. L.

2018-05-01

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WOx/Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WOx film-based device offers a feasible way for the applications of oxide-based RRAMs.

Nd2-xCexCuO4-y/Nd2-xCexOy boundary and resistive switchings in mesoscopic structures on base of epitaxial Nd1.86Ce0.14CuO4-у films

NASA Astrophysics Data System (ADS)

Tulina, N. A.; Rossolenko, A. N.; Ivanov, A. A.; Sirotkin, V. V.; Shmytko, I. M.; Borisenko, I. Yu.; Ionov, A. M.

2016-08-01

Reverse and stable bipolar resistive switching effect (BRSE) was observed in planar Nd2-xCex CuO4-y/Nd2-xCexOx/Ag heterostructure. It was shown that the СVС of the BRSE observed has a diode character. Simulations were used to consider the influence of the nonuniform distribution of an electric field at the interface of a heterojunction on the effect of bipolar resistive switching in investigated structures. The inhomogeneous distribution of the electric field near the contact edge creates regions of higher electric field strength which, in turn, stimulates motion and redistribution of defects, changes of the resistive properties of the whole structure and formation of a percolation channel.

Probing domain switching dynamics in ferroelectric thick films by small field e31,f piezoelectric measurement

NASA Astrophysics Data System (ADS)

Cheng, Hongbo; Ouyang, Jun; Kanno, Isaku

2017-07-01

Epitaxial Pb(Zr0.53Ti0.47)O3 films were grown on (001) Pt/(001) MgO via rf-magnetron sputtering. Switching dynamics of 90° and 180° domains under bi-polar electric fields were probed by using small-field e31 ,f measurements in which the evolution of the transverse piezoelectric response with the bias voltage represents a set of fingerprints of the evolving domain structure. Furthermore, the asymmetric e31 ,f-V curves revealed a strong built-in electric field, which was verified by the standard polarization-electric field hysteresis measurement. Finally, X-ray 2θ-scan patterns under DC bias voltages were collected for the piezoelectric specimen. The domain switching sequence indicated by the XRD results is consistent with that revealed by the e31 ,f measurement.

Electrical Safety for Non-Electricians

MedlinePlus

... In 2010, 239 construction workers were killed by electricity.* More than 2/3 of those killed are ... must be grounded. Your employer must check all electric systems, including wiring and switches, to be sure ...

Study of feasibility of solid-state electric switch gear for aircraft and spacecraft

NASA Technical Reports Server (NTRS)

Buchanan, E.; Waddington, D.

1973-01-01

The design of a solid-state circuit breaker that can be interconnected to a second breaker to form a transfer switch is presented. The breaker operates on a nominal 270-V dc circuit and controls power to loads of up to 15 A. Automatic overload trip is provided as a function of excess energy measured through the breaker and/or excess current through the breaker. After an overload trip, up to nine preprogrammable attempts to reclose may be tried with programmable delays between each attempt. The breaker or switch is remotely controllable. Test data on performance in the laboratory over temperatures from -45 to 100 C are provided. The feasibility of solid-state switch gear has been established.

Tuning the resistive switching properties of TiO2-x films

NASA Astrophysics Data System (ADS)

Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

2015-03-01

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

2017-10-01

We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

Numerical Simulation of Liquid Metal RF MEMS Switch Based on EWOD

NASA Astrophysics Data System (ADS)

Liu, Tingting; Gao, Yang; Yang, Tao; Guo, Huihui

2018-03-01

Conventional RF MEMS switches rely on metal-to-dielectric or metal-to-metal contacts. Some problems in the “solid-solid” contact, such as contact degradation, signal bounce and poor reliability, can be solved by using “liquid-solid” contact. The RF MEMS switch based on liquid metal is characterized by small contact resistance, no moving parts, high reliability and long life. Using electrowetting-on-dielectric (EWOD) way to control the movement of liquid metal in the RF MEMS switch, to achieve the “on” and “off” of the switch. In this paper, the electrical characteristics and RF characteristics of RF MEMS switches are simulated by fluid mechanics software FLUENT and electromagnetic simulation software HFSS. The effects of driving voltage, switching time, dielectric layer, hydrophobic layer material and thickness, switching channel height on the RF characteristics are studied. The results show that to increase the external voltage to the threshold voltage of 58V, the liquid metal began to move, and the switching time from “off” state to “on” state is 16ms. In the 0~20GHz frequency range, the switch insertion loss is less than 0.28dB, isolation is better than 23.32dB.

Control of Nanofilament Structure and Observations of Quantum Point Contact Behavior in Ni/NiO Nanowire Junctions

NASA Astrophysics Data System (ADS)

Oliver, Sean; Fairfield, Jessamyn; Lee, Sunghun; Bellew, Allen; Stone, Iris; Ruppalt, Laura; Boland, John; Vora, Patrick

Resistive switching is ideal for use in non-volatile memory where information is stored in a metallic or insulating state. Nanowire junctions formed at the intersection of two Ni/NiO core/shell nanowires have emerged as a leading candidate structure where resistive switching occurs due to the formation and destruction of conducting filaments. However, significant knowledge gaps remain regarding the conduction mechanisms as measurements are typically only performed at room temperature. Here, we combine temperature-dependent current-voltage (IV) measurements from 15 - 300 K with magnetoresistance studies and achieve new insight into the nature of the conducting filaments. We identify a novel semiconducting state that behaves as a quantum point contact and find evidence for a possible electric-field driven phase transition. The insulating state exhibits unexpectedly complex IV characteristics that highlight the disordered nature of the ruptured filament while we find clear signs of anisotropic magnetoresistance in the metallic state. Our results expose previously unobserved behaviors in nanowire resistive switching devices and pave the way for future applications where both electrical and magnetic switching can be achieved in a single device. This work was supported by ONR Grant N-00014-15-1-2357.

Software and hardware complex for research and management of the separation process

NASA Astrophysics Data System (ADS)

Borisov, A. P.

2018-01-01

The article is devoted to the development of a program for studying the operation of an asynchronous electric drive using vector-algorithmic switching of windings, as well as the development of a hardware-software complex for controlling parameters and controlling the speed of rotation of an asynchronous electric drive for investigating the operation of a cyclone. To study the operation of an asynchronous electric drive, a method was used in which the average value of flux linkage is found and a method for vector-algorithmic calculation of the power and electromagnetic moment of an asynchronous electric drive feeding from a single-phase network is developed, with vector-algorithmic commutation, and software for calculating parameters. The software part of the complex allows to regulate the speed of rotation of the motor by vector-algorithmic switching of transistors or, using pulse-width modulation (PWM), set any engine speed. Also sensors are connected to the hardware-software complex at the inlet and outlet of the cyclone. The developed cyclone with an inserted complex allows to receive high efficiency of product separation at various entrance speeds. At an inlet air speed of 18 m / s, the cyclone’s maximum efficiency is achieved. For this, it is necessary to provide the rotational speed of an asynchronous electric drive with a frequency of 45 Hz.

Air and water cooled modulator

DOEpatents

Birx, Daniel L.; Arnold, Phillip A.; Ball, Don G.; Cook, Edward G.

1995-01-01

A compact high power magnetic compression apparatus and method for delivering high voltage pulses of short duration at a high repetition rate and high peak power output which does not require the use of environmentally unacceptable fluids such as chlorofluorocarbons either as a dielectric or as a coolant, and which discharges very little waste heat into the surrounding air. A first magnetic switch has cooling channels formed therethrough to facilitate the removal of excess heat. The first magnetic switch is mounted on a printed circuit board. A pulse transformer comprised of a plurality of discrete electrically insulated and magnetically coupled units is also mounted on said printed board and is electrically coupled to the first magnetic switch. The pulse transformer also has cooling means attached thereto for removing heat from the pulse transformer. A second magnetic switch also having cooling means for removing excess heat is electrically coupled to the pulse transformer. Thus, the present invention is able to provide high voltage pulses of short duration at a high repetition rate and high peak power output without the use of environmentally unacceptable fluids and without discharging significant waste heat into the surrounding air.

Multi-megavolt low jitter multistage switch

DOEpatents

Humphreys, D.R.; Penn, K.J. Jr.

1985-06-19

It is one object of the present invention to provide a multistage switch capable of holding off numerous megavolts, until triggered, from a particle beam accelerator of the type used for inertial confinement fusion. The invention provides a multistage switch having low timing jitter and capable of producing multiple spark channels for spreading current over a wider area to reduce electrode damage and increase switch lifetime. The switch has fairly uniform electric fields and a short spark gap for laser triggering and is engineered to prevent insulator breakdowns.

Markov switching of the electricity supply curve and power prices dynamics

NASA Astrophysics Data System (ADS)

Mari, Carlo; Cananà, Lucianna

2012-02-01

Regime-switching models seem to well capture the main features of power prices behavior in deregulated markets. In a recent paper, we have proposed an equilibrium methodology to derive electricity prices dynamics from the interplay between supply and demand in a stochastic environment. In particular, assuming that the supply function is described by a power law where the exponent is a two-state strictly positive Markov process, we derived a regime switching dynamics of power prices in which regime switches are induced by transitions between Markov states. In this paper, we provide a dynamical model to describe the random behavior of power prices where the only non-Brownian component of the motion is endogenously introduced by Markov transitions in the exponent of the electricity supply curve. In this context, the stochastic process driving the switching mechanism becomes observable, and we will show that the non-Brownian component of the dynamics induced by transitions from Markov states is responsible for jumps and spikes of very high magnitude. The empirical analysis performed on three Australian markets confirms that the proposed approach seems quite flexible and capable of incorporating the main features of power prices time-series, thus reproducing the first four moments of log-returns empirical distributions in a satisfactory way.

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

2016-05-15

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic memory switching through phase-change.

Electron-Impact-Ionization and Electron-Attachment Cross Sections of Radicals Important in Transient Gaseous Discharges.

DTIC Science & Technology

1988-02-05

for understanding the microscopic processes of electrical discharges and for designing gaseous discharge switches. High power gaseous discharge switches...half-maximum) energy resolution. The electron gun and ion extraction were of the same design of Srivastava at the Jet Propulsion Laboratory. Ions...photons. - The observed current switching can be applied to the design of discharge switches. Elec- tron transport parameters are needed for the

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Modeling spot markets for electricity and pricing electricity derivatives

NASA Astrophysics Data System (ADS)

Ning, Yumei

Spot prices for electricity have been very volatile with dramatic price spikes occurring in restructured market. The task of forecasting electricity prices and managing price risk presents a new challenge for market players. The objectives of this dissertation are: (1) to develop a stochastic model of price behavior and predict price spikes; (2) to examine the effect of weather forecasts on forecasted prices; (3) to price electricity options and value generation capacity. The volatile behavior of prices can be represented by a stochastic regime-switching model. In the model, the means of the high-price and low-price regimes and the probabilities of switching from one regime to the other are specified as functions of daily peak load. The probability of switching to the high-price regime is positively related to load, but is still not high enough at the highest loads to predict price spikes accurately. An application of this model shows how the structure of the Pennsylvania-New Jersey-Maryland market changed when market-based offers were allowed, resulting in higher price spikes. An ARIMA model including temperature, seasonal, and weekly effects is estimated to forecast daily peak load. Forecasts of load under different assumptions about weather patterns are used to predict changes of price behavior given the regime-switching model of prices. Results show that the range of temperature forecasts from a normal summer to an extremely warm summer cause relatively small increases in temperature (+1.5%) and load (+3.0%). In contrast, the increases in prices are large (+20%). The conclusion is that the seasonal outlook forecasts provided by NOAA are potentially valuable for predicting prices in electricity markets. The traditional option models, based on Geometric Brownian Motion are not appropriate for electricity prices. An option model using the regime-switching framework is developed to value a European call option. The model includes volatility risk and allows changes in prices and volatility to be correlated. The results show that the value of a power plant is much higher using the financial option model than using traditional discounted cash flow.

Switching of the electrical conductivity of plasticized PVC films under uniaxial pressure

NASA Astrophysics Data System (ADS)

Vlasov, D. V.; Apresyan, L. A.; Vlasova, T. V.; Kryshtob, V. I.

2011-11-01

The jumplike switching of the electrical conductivity in wide-band-gap polymer (antistatic plasticized polyvinylchloride) films under uniaxial pressure is studied. In various plasticized PVC materials, the uniaxial pressure inducing a conductivity jump by four orders of magnitude or higher changes from several to several hundreds of bars, and this effect is retained at a film thickness of several hundred microns, which is two orders of magnitude larger than the critical film thicknesses known for other wide-band-gap polymers. In addition to the earlier interpretation of the conductivity anomalies in plasticized PVC, we proposed a phenomenological electron-molecular dynamic nanotrap model, in which local charge transfer is provided by mobile molecule segments in a plasticized polymer.

Analytical Study on the Saturated Polarization Under Electric Field and Phase Equilibrium of Three-Phase Polycrystalline Ferroelectrics by Using the Generalized Inverse-Pole-Figure Model

NASA Astrophysics Data System (ADS)

Ju, Kyong-Sik; Ryo, Hyok-Su; Pak, Sung-Nam; Pak, Chang-Su; Ri, Sung-Guk; Ri, Dok-Hwan

2018-07-01

By using the generalized inverse-pole-figure model, the numbers of crystalline particles involved in different domain-switching near the triple tetragonal-rhombohedral-orthorhombic (T-R-O) points of three-phase polycrystalline ferroelectrics have been analytically calculated and domain-switching which can bring out phase transformations has been considered. Through polarization by an electric field, different numbers of crystalline particles can be involved in different phase transformations. According to the phase equilibrium conditions, the phase equilibrium compositions of the three phases coexisting near the T-R-O triple point have been evaluated from the results of the numbers of crystalline particles involved in different phase transformations.

77 FR 64827 - Certain Lighting Control Devices Including Dimmer Switches and Parts Thereof (IV); Final...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-23

...Notice is hereby given that the U.S. International Trade Commission has terminated the above-captioned investigation with a finding of violation of section 337, and has issued a general exclusion order directed against infringing lighting control devices including dimmer switches and parts thereof, and cease and desist orders directed against respondents American Top Electric Corp. (``American Top'') and Big Deal Electric Corp. (``Big Deal''), both of Santa Ana, California; Elemental LED, LLC d/b/a Diode LED (``Elemental'') of Emeryville, California; and Zhejiang Yuelong Mechanical and Electrical Co. (``Zhejiang Yuelong'') of Zhejiang, China.

Resistance switching in polyvinylidene fluoride (PVDF) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramod, K.; Sahu, Binaya Kumar; Gangineni, R. B., E-mail: rameshg.phy@pondiuni.edu.in

2015-06-24

Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

PubMed

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Nanoeletromechanical switch and logic circuits formed therefrom

DOEpatents

Nordquist, Christopher D [Albuquerque, NM; Czaplewski, David A [Albuquerque, NM

2010-05-18

A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

Electric polarization switching in an atomically thin binary rock salt structure

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

2018-01-01

Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

Specifying and calibrating instrumentations for wideband electronic power measurements. [in switching circuits

NASA Technical Reports Server (NTRS)

Lesco, D. J.; Weikle, D. H.

1980-01-01

The wideband electric power measurement related topics of electronic wattmeter calibration and specification are discussed. Tested calibration techniques are described in detail. Analytical methods used to determine the bandwidth requirements of instrumentation for switching circuit waveforms are presented and illustrated with examples from electric vehicle type applications. Analog multiplier wattmeters, digital wattmeters and calculating digital oscilloscopes are compared. The instrumentation characteristics which are critical to accurate wideband power measurement are described.

Magneto-ionic control of interfacial magnetism

NASA Astrophysics Data System (ADS)

Bauer, Uwe; Yao, Lide; Tan, Aik Jun; Agrawal, Parnika; Emori, Satoru; Tuller, Harry L.; van Dijken, Sebastiaan; Beach, Geoffrey S. D.

2015-02-01

In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here, we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magneto-electric coupling mechanisms. We directly observe in situ voltage-driven O2- migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.75 erg cm-2 at just 2 V. We exploit the thermally activated nature of ion migration to markedly increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

NASA Astrophysics Data System (ADS)

Wehmeyer, Geoff; Yabuki, Tomohide; Monachon, Christian; Wu, Junqiao; Dames, Chris

2017-12-01

Interest in new thermal diodes, regulators, and switches has been rapidly growing because these components have the potential for rich transport phenomena that cannot be achieved using traditional thermal resistors and capacitors. Each of these thermal components has a signature functionality: Thermal diodes can rectify heat currents, thermal regulators can maintain a desired temperature, and thermal switches can actively control the heat transfer. Here, we review the fundamental physical mechanisms of switchable and nonlinear heat transfer which have been harnessed to make thermal diodes, switches, and regulators. The review focuses on experimental demonstrations, mainly near room temperature, and spans the fields of heat conduction, convection, and radiation. We emphasize the changes in thermal properties across phase transitions and thermal switching using electric and magnetic fields. After surveying fundamental mechanisms, we present various nonlinear and active thermal circuits that are based on analogies with well-known electrical circuits, and analyze potential applications in solid-state refrigeration and waste heat scavenging.

System for automatically switching transformer coupled lines

NASA Technical Reports Server (NTRS)

Dwinell, W. S. (Inventor)

1979-01-01

A system is presented for automatically controlling transformer coupled alternating current electric lines. The secondary winding of each transformer is provided with a center tap. A switching circuit is connected to the center taps of a pair of secondary windings and includes a switch controller. An impedance is connected between the center taps of the opposite pair of secondary windings. The switching circuit has continuity when the AC lines are continuous and discontinuity with any disconnect of the AC lines. Normally open switching means are provided in at least one AC line. The switch controller automatically opens the switching means when the AC lines become separated.

Effect of tungsten implantation on the switching parameters in V2O5 films

NASA Astrophysics Data System (ADS)

Burdyukh, S. V.; Berezina, O. Ya.; Pergament, A. L.

2017-11-01

The paper examines the effect of doping with tungsten on switching in hydrated vanadium pentoxide films. The switching effect is associated with the metal-insulator transition in a vanadium dioxide channel that forms in the initial film due to the process of electrical forming (EF). Doping is carried out by the plasma immersion ion implantation method. It is shown that implanting small tungsten doses improves the switching parameters after EF. When implanting large doses, switching is observed without EF, and if EF is applied, the switching effect, on the contrary, disappears.

Micromechanical Switches on GaAs for Microwave Applications

NASA Technical Reports Server (NTRS)

Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

1995-01-01

In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

Study on Resistive Switching Property of Ti Doped Novel NiO Thin Films

NASA Astrophysics Data System (ADS)

Li, Y.; Zhao, G. Y.; Kou, Z. B.; Liu, J. C.; Zhu, R.

2018-01-01

Ti doped nickel oxide thin films have been fabricated by sol-gel dip-coating process using nickel acetate and tetrabutyl titanate as source materials. The effect of the amount of Ti dopant on the surface roughness, optical, chemical state and electrical properties of NiO: Ti thin films was observed by atomic force microscopy (AFM), Uv-vis spectroscopy, X-ray photoelectron spectroscopy(XPS) and I-V measurement, respectively. Results show that the Ti doping is an effective ways to improve the resistive switching behaviors and it is a convenient way to understand the mechanism of the resistive switching behaviors.

Role of switching-on and -off effects in the vacuum instability

NASA Astrophysics Data System (ADS)

Adorno, T. C.; Ferreira, R.; Gavrilov, S. P.; Gitman, D. M.

2018-04-01

We find exact differential mean numbers of fermions and bosons created from the vacuum due to a composite electric field of special configuration. This configuration imitates a finite switching-on and -off regime and consists of fields that switch on exponentially from the infinitely remote past, remains constant during a certain interval T and switch off exponentially to the infinitely remote future. We show that calculations in the slowly varying field approximation are completely predictable in the framework of a locally constant field approximation. Beyond the slowly varying field approximation, we study effects of fast switching on and off in a number of cases when the size of the dimensionless parameter eET is either close or exceeds the threshold value that determines the transition from a regime sensitive to on-off parameters to the slowly varying regime for which these effects are secondary.

MEMS for optical switching: technologies, applications, and perspectives

NASA Astrophysics Data System (ADS)

Lin, Lih-Y.; Goldstein, Evan L.

1999-09-01

Micro-electro-mechanical-systems (MEMS), due to their unique ability to integrate electrical, mechanical, and optical elements on a single chip, have recently begun to exhibit great potential for realizing optical components and subsystems in compact, lowcost form. Recently, this technology has been applied to wavelength-division-multiplexed (WDM) networks, and resulted in advances in several network elements, including switches, filters, modulators, and wavelength-add/drop multiplexers. Due largely to the exploding capacity demand arising from data traffic, the transmission capacity demanded of and available from WDM networks is anticipated to increase rapidly. For managing such networks, optical switching is of particular interest due to the fact that its complexity is essentially immune to steady advances in the per-channel bit-rate. We will review various micromachined optical-switching technologies, emphasizing studies of their reliability. We then summarizing recent progress in the free-space MEMS optical switch we have demonstrated.

MEMS for optical switching: technologies, applications, and perspectives

NASA Astrophysics Data System (ADS)

Lin, Lih-Yuan; Goldstein, Evan L.

1999-09-01

Micro-electro-mechanical-systems (MEMS), due to their unique ability to integrate electrical, mechanical, and optical elements on a single chip, have recently begun to exhibit great potential for realizing optical components and subsystems in compact, low-cost form. Recently, this technology has been applied to wavelength-division-multiplexed (WDM) networks, and resulted in advances in several network elements, including switches, filters, modulators, and wavelength-add/drop multiplexers. Due largely to the exploding capacity demand arising from data traffic, the transmission capacity demanded of and available from WDM networks is anticipated to increase rapidly. For managing such networks, optical switching is of particular interest due to the fact that its complexity is essentially immune to steady advances in the per-channel bit-rate. We will review various micromachined optical-switching technologies, emphasizing studies of their reliability. We then summarizing recent progress in the free-space MEMS optical switch we have demonstrated.

Electrical modulation and switching of transverse acoustic phonons

NASA Astrophysics Data System (ADS)

Jeong, H.; Jho, Y. D.; Rhim, S. H.; Yee, K. J.; Yoon, S. Y.; Shim, J. P.; Lee, D. S.; Ju, J. W.; Baek, J. H.; Stanton, C. J.

2016-07-01

We report on the electrical manipulation of coherent acoustic phonon waves in GaN-based nanoscale piezoelectric heterostructures which are strained both from the pseudomorphic growth at the interfaces as well as through external electric fields. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and usually only longitudinal acoustic phonons are generated by ultrafast displacive screening of potential gradients. We show that even for c -GaN, the combined application of lateral and vertical electric fields can not only switch on the normally forbidden TA mode, but they can also modulate the amplitudes and frequencies of both modes. By comparing the transient differential reflectivity spectra in structures with and without an asymmetric potential distribution, the role of the electrical controllability of phonons was demonstrated as changes to the propagation velocities, the optical birefringence, the electrically polarized TA waves, and the geometrically varying optical sensitivities of phonons.

Electrical model of dielectric barrier discharge homogenous and filamentary modes

NASA Astrophysics Data System (ADS)

López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

2017-01-01

This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oosthoek, J. L. M.; Kooi, B. J., E-mail: B.J.Kooi@rug.nl; Voogt, F. C.

2015-02-14

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament ismore » formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.« less

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

NASA Astrophysics Data System (ADS)

Oosthoek, J. L. M.; Voogt, F. C.; Attenborough, K.; Verheijen, M. A.; Hurkx, G. A. M.; Gravesteijn, D. J.; Kooi, B. J.

2015-02-01

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.

Effect of boundary (support) conditions on piezoelectric damping in the case of SSDI vibration control technique

NASA Astrophysics Data System (ADS)

Guyomar, D.; Mohammadi, S.; Richard, C.

2009-02-01

Piezoelectric transducers in conjunction with appropriate electric networks can be used as a mechanical energy dissipation device. If a piezoelectric element is attached to a structure, it is strained as the structure deforms and converts a portion of the vibration energy into electrical energy that can be dissipated through a shunt network in the form of heating. These vibration control devices experienced a great development in recent years, due to their performances and advantages compared with active techniques. One of them is the synchronized switch damping (SSD) and derived techniques, which were developed in the field of piezoelectric damping, and which lead to a very good trade-off between the simplicity, the required power supply and their performances. This technique consists in a non-linear processing of the piezoelectric voltage, which induces an increase in electromechanical energy conversion. The control law consists in triggering the inverting switch on each extremum of voltage (or displacement). In this study, the proposed method for the switching sequence is based on the statistical evaluation of structural deflection. The purpose of this paper is to present an experimental study of the synchronized switch damping on inductance (SSDI) control technique sensitivity to the system boundary conditions. It is observed that the fundamental natural frequency greatly depends on these conditions. The effect of these constraints is distributed all over the system and significantly affects the results.

Electric vehicle system for charging and supplying electrical power

DOEpatents

Su, Gui Jia

2010-06-08

A power system that provides power between an energy storage device, an external charging-source/load, an onboard electrical power generator, and a vehicle drive shaft. The power system has at least one energy storage device electrically connected across a dc bus, at least one filter capacitor leg having at least one filter capacitor electrically connected across the dc bus, at least one power inverter/converter electrically connected across the dc bus, and at least one multiphase motor/generator having stator windings electrically connected at one end to form a neutral point and electrically connected on the other end to one of the power inverter/converters. A charging-sourcing selection socket is electrically connected to the neutral points and the external charging-source/load. At least one electronics controller is electrically connected to the charging-sourcing selection socket and at least one power inverter/converter. The switch legs in each of the inverter/converters selected by the charging-source/load socket collectively function as a single switch leg. The motor/generators function as an inductor.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

DBD tranformerless power supplies: impact of the parasitic capacitances on the power transfer.

NASA Astrophysics Data System (ADS)

Diop, M. A.; Belinger, A.; Piquet, H.

2017-04-01

A new transformerless power supply for DBD application is presented here. The power supply is built with 10kV SiC MOSFET. This high voltage switches allow holding the high voltage required by the DBD. An analytical study of the converter’s operation is presented to deduce the power transmitted to the DBD. A comparison between the experimental and theoretical electrical waveforms is shown. The experimental waveforms are particularly affected by all the parasitic capacitances. When all the switches are in OFF state, oscillations cause over-voltages across the switches. An analysis of the effect of each capacitance is presented and demonstrates that the parasitic capacitances of the switches and of the inductance play a key role in the actual power transfer.

Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

PubMed Central

Chen, Kai-Huang; Tsai, Tsung-Ming; Cheng, Chien-Min; Huang, Shou-Jen; Chang, Kuan-Chang; Liang, Shu-Ping; Young, Tai-Fa

2017-01-01

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model. PMID:29283368

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optoelectronic switching in diamond and optical surface breakdown

NASA Astrophysics Data System (ADS)

Lipatov, E. I.; Tarasenko, V. F.

2008-03-01

The optoelectronic switching in two natural diamond samples of type 2-A is studied at voltages up to 1000 V and the energy density of control 60-ns, 308-nm laser pulses up to 0.6 J cm-2. It is shown that the design of a diamond switch affects the switching efficiency. When the energy density exceeds 0.2 J cm-2 and the interelectrode surface is completely illuminated, the surface breakdown is initiated by UV radiation, which shunts the current flow through the diamond crystal. When the illumination of the interelectrode surface is excluded, the surface breakdown does not occur. The threshold radiation densities sufficient for initiating the surface breakdown are determined for electric field strengths up to 10 kV cm-1.

Electrical Surveillance.

ERIC Educational Resources Information Center

Zimmerman, Jim

1992-01-01

Students examine the concepts of electrical circuits and switches by building their own alarm systems. Students apply their understanding by creating recorder, window, pressure sensitive, and lunch box alarms. (MDH)

PRESSURE SENSING DEVICE

DOEpatents

Pope, K.E.

1959-12-15

This device is primarily useful as a switch which is selectively operable to actuate in response to either absolute or differential predetermined pressures. The device generally comprises a pressure-tight housing divided by a movable impermeable diaphragm into two chambers, a reference pressure chamber and a bulb chamber containing the switching means and otherwise filled with an incompressible non-conducting fluid. The switch means comprises a normally collapsed bulb having an electrically conductive outer surface and a vent tube leading to the housing exterior. The normally collapsed bulb is disposed such that upon its inflation, respensive to air inflow from the vent, two contacts fixed within the bulb chamber are adapted to be electrically shorted by the conducting outer surface of the bulb.

Capacitive microelectromechanical switches with dynamic soft-landing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep R.

2015-10-13

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switchedmore » between the inactivated state and the activated state.« less

Capacitive microelectromechanical switches with dynamic soft-landing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep

2017-01-03

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switchedmore » between the inactivated state and the activated state.« less

Quality engineering tools focused on high power LED driver design using boost power stages in switch mode

NASA Astrophysics Data System (ADS)

Ileana, Ioan; Risteiu, Mircea; Marc, Gheorghe

2016-12-01

This paper is a part of our research dedicated to high power LED lamps designing. The boost-up selected technology wants to meet driver producers' tendency in the frame of efficiency and disturbances constrains. In our work we used modeling and simulation tools for implementing scenarios of the driver work when some controlling functions are executed (output voltage/ current versus input voltage and fixed switching frequency, input and output electric power transfer versus switching frequency, transient inductor voltage analysis, and transient out capacitor analysis). Some electrical and thermal stress conditions are also analyzed. Based on these aspects, a high reliable power LED driver has been designed.

Magnetic switch coupling to synchronize magnetic modulators

DOEpatents

Reed, K.W.; Kiekel, P.

1999-04-27

Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

NASA Astrophysics Data System (ADS)

Kaltenbacher, Thomas; Caspers, Fritz; Doser, Michael; Kellerbauer, Alban; Pribyl, Wolfgang

2013-11-01

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than -0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

ELECTRIC CONTACT MEANS

DOEpatents

Grear, J.W. Jr.

1959-03-10

A switch adapted to maintain electrical connections under conditions of vibration or acceleration is described. According to the invention, thc switch includes a rotatable arm carrying a conductive bar arranged to close against two contacts spaced in the same plane. The firm and continuous engagement of the conductive bar with the contacts is acheived by utilizeing a spring located betwenn the vbar and athe a rem frzme and slidable mounting the bar in channel between two arms suspendef from the arm frame.

Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5 Nanowires.

PubMed

Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

2016-10-12

A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge 2 Sb 2 Te 5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

Marginal abatement cost curve for nitrogen oxides incorporating controls, renewable electricity, energy efficiency, and fuel switching.

PubMed

Loughlin, Daniel H; Macpherson, Alexander J; Kaufman, Katherine R; Keaveny, Brian N

2017-10-01

A marginal abatement cost curve (MACC) traces out the relationship between the quantity of pollution abated and the marginal cost of abating each additional unit. In the context of air quality management, MACCs are typically developed by sorting control technologies by their relative cost-effectiveness. Other potentially important abatement measures such as renewable electricity, energy efficiency, and fuel switching (RE/EE/FS) are often not incorporated into MACCs, as it is difficult to quantify their costs and abatement potential. In this paper, a U.S. energy system model is used to develop a MACC for nitrogen oxides (NO x ) that incorporates both traditional controls and these additional measures. The MACC is decomposed by sector, and the relative cost-effectiveness of RE/EE/FS and traditional controls are compared. RE/EE/FS are shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone. Furthermore, a portion of RE/EE/FS appear to be cost-competitive with traditional controls. Renewable electricity, energy efficiency, and fuel switching can be cost-competitive with traditional air pollutant controls for abating air pollutant emissions. The application of renewable electricity, energy efficiency, and fuel switching is also shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone.

Designing Predictive Diagnose Method for Insulation Resistance Degradation of the Electrical Power Cables from Neutral Insulated Power Networks

NASA Astrophysics Data System (ADS)

Dobra, R.; Pasculescu, D.; Risteiu, M.; Buica, G.; Jevremović, V.

2017-06-01

This paper describe some possibilities to minimize voltages switching-off risks from the mining power networks, in case of insulated resistance faults by using a predictive diagnose method. The cables from the neutral insulated power networks (underground mining) are designed to provide a flexible electrical connection between portable or mobile equipment and a point of supply, including main feeder cable for continuous miners, pump cable, and power supply cable. An electronic protection for insulated resistance of mining power cables can be made using this predictive strategy. The main role of electronic relays for insulation resistance degradation of the electrical power cables, from neutral insulated power networks, is to provide a permanent measurement of the insulated resistance between phases and ground, in order to switch-off voltage when the resistance value is below a standard value. The automat system of protection is able to signalize the failure and the human operator will be early informed about the switch-off power and will have time to take proper measures to fix the failure. This logic for fast and automat switch-off voltage without aprioristic announcement is suitable for the electrical installations, realizing so a protection against fires and explosion. It is presented an algorithm and an anticipative relay for insulated resistance control from three-phase low voltage installations with insulated neutral connection.

Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions necessary for the desired switching time and actuation voltage waveform. Moreover, process related design rules can be automatically verified.

14 CFR 23.1361 - Master switch arrangement.

Code of Federal Regulations, 2010 CFR

2010-01-01

... AIRWORTHINESS STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Equipment Electrical... to allow ready disconnection of each electric power source from power distribution systems, except as...

12. VIEW OF SWITCHES AND SPURS FROM NEAR EAST END ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

12. VIEW OF SWITCHES AND SPURS FROM NEAR EAST END OF CEDAR MILL CREEK TRESTLE NEAR MERLO ROAD, FACING SOUTHEAST - Oregon Electric Railway Westside Corridor, Between Watson & 185th Avenues, Beaverton, Washington County, OR

49 CFR 236.314 - Electric lock for hand-operated switch or derail.

Code of Federal Regulations, 2014 CFR

2014-10-01

... shall be controlled by operator of the machine and shall be unlocked only after signals governing movements over such switch or derail display aspects indicating stop. Approach or time locking shall be...

49 CFR 236.314 - Electric lock for hand-operated switch or derail.

Code of Federal Regulations, 2013 CFR

2013-10-01

... shall be controlled by operator of the machine and shall be unlocked only after signals governing movements over such switch or derail display aspects indicating stop. Approach or time locking shall be...

49 CFR 236.314 - Electric lock for hand-operated switch or derail.

Code of Federal Regulations, 2011 CFR

2011-10-01

... shall be controlled by operator of the machine and shall be unlocked only after signals governing movements over such switch or derail display aspects indicating stop. Approach or time locking shall be...

49 CFR 236.314 - Electric lock for hand-operated switch or derail.

Code of Federal Regulations, 2012 CFR

2012-10-01

... shall be controlled by operator of the machine and shall be unlocked only after signals governing movements over such switch or derail display aspects indicating stop. Approach or time locking shall be...

Attaching Copper Wires to Magnetic-Reed-Switch Leads

NASA Technical Reports Server (NTRS)

Kamila, Rudolf

1987-01-01

Bonding method reliably joins copper wires to short iron-alloy leads from glass-encased dry magnetic-reed switch without disturbing integrity of glass-to-metal seal. Joint resistant to high temperatures and has low electrical resistance.

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators

NASA Astrophysics Data System (ADS)

Chen, X. Z.; Zarzuela, R.; Zhang, J.; Song, C.; Zhou, X. F.; Shi, G. Y.; Li, F.; Zhou, H. A.; Jiang, W. J.; Pan, F.; Tserkovnyak, Y.

2018-05-01

We investigate the current-induced switching of the Néel order in NiO (001 )/Pt heterostructures, which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 1 07 A /cm2 . The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Néel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn2Au and CuMnAs, where fieldlike torques induced by the Edelstein effect drive the Néel switching, therefore resulting in an orthogonal alignment between the Néel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

Resistive switching characteristics and mechanisms in silicon oxide memory devices

NASA Astrophysics Data System (ADS)

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

2016-05-01

Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

Application of small-signal modeling and measurement techniques to the stability analysis of an integrated switching-mode power system. [onboard Dynamics Explorer Satellite

NASA Technical Reports Server (NTRS)

Wong, R. C.; Owen, H. A., Jr.; Wilson, T. G.; Rodriguez, G. E.

1980-01-01

Small-signal modeling techniques are used in a system stability analysis of a breadboard version of a complete functional electrical power system. The system consists of a regulated switching dc-to-dc converter, a solar-cell-array simulator, a solar-array EMI filter, battery chargers and linear shunt regulators. Loss mechanisms in the converter power stage, including switching-time effects in the semiconductor elements, are incorporated into the modeling procedure to provide an accurate representation of the system without requiring frequency-domain measurements to determine the damping factor. The small-signal system model is validated by the use of special measurement techniques which are adapted to the poor signal-to-noise ratio encountered in switching-mode systems. The complete electrical power system with the solar-array EMI filter is shown to be stable over the intended range of operation.

Optimization of the Switch Mechanism in a Circuit Breaker Using MBD Based Simulation

PubMed Central

Jang, Jin-Seok; Yoon, Chang-Gyu; Ryu, Chi-Young; Kim, Hyun-Woo; Bae, Byung-Tae; Yoo, Wan-Suk

2015-01-01

A circuit breaker is widely used to protect electric power system from fault currents or system errors; in particular, the opening mechanism in a circuit breaker is important to protect current overflow in the electric system. In this paper, multibody dynamic model of a circuit breaker including switch mechanism was developed including the electromagnetic actuator system. Since the opening mechanism operates sequentially, optimization of the switch mechanism was carried out to improve the current breaking time. In the optimization process, design parameters were selected from length and shape of each latch, which changes pivot points of bearings to shorten the breaking time. To validate optimization results, computational results were compared to physical tests with a high speed camera. Opening time of the optimized mechanism was decreased by 2.3 ms, which was proved by experiments. Switch mechanism design process can be improved including contact-latch system by using this process. PMID:25918740

Electro-optical logic gates based on graphene-silicon waveguides

NASA Astrophysics Data System (ADS)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

NASA Astrophysics Data System (ADS)

Wang, Ziwen; Kumar, Suhas; Wong, H.-S. Philip; Nishi, Yoshio

2018-02-01

Threshold switches based on niobium oxide (NbOx) are promising candidates as bidirectional selector devices in crossbar memory arrays and building blocks for neuromorphic computing. Here, it is experimentally demonstrated that the electrical characteristics of NbOx threshold switches can be tuned by engineering the thermal insulation. Increasing the thermal insulation by ˜10× is shown to produce ˜7× reduction in threshold current and ˜45% reduction in threshold voltage. The reduced threshold voltage leads to ˜5× reduction in half-selection leakage, which highlights the effectiveness of reducing half-selection leakage of NbOx selectors by engineering the thermal insulation. A thermal feedback model based on Poole-Frenkel conduction in NbOx can explain the experimental results very well, which also serves as a piece of strong evidence supporting the validity of the Poole-Frenkel based mechanism in NbOx threshold switches.

Thermally actuated thermionic switch

DOEpatents

Barrus, Donald M.; Shires, Charles D.

1988-01-01

A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

Thermally actuated thermionic switch

DOEpatents

Barrus, D.M.; Shires, C.D.

1982-09-30

A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

PubMed

Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-01-06

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jae Sung; Lee, Shinbuhm; Noh, Tae Won

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor inmore » determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

46 CFR 111.95-7 - Wiring of boat winch components.

Code of Federal Regulations, 2012 CFR

2012-10-01

...-7 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Power-Operated Boat Winches § 111.95-7 Wiring of boat winch... electric installation from all sources of potential. The switch must be in series with and on the supply...

46 CFR 111.95-7 - Wiring of boat winch components.

Code of Federal Regulations, 2013 CFR

2013-10-01

...-7 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Power-Operated Boat Winches § 111.95-7 Wiring of boat winch... electric installation from all sources of potential. The switch must be in series with and on the supply...

46 CFR 111.95-7 - Wiring of boat winch components.

Code of Federal Regulations, 2011 CFR

2011-10-01

...-7 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Power-Operated Boat Winches § 111.95-7 Wiring of boat winch... electric installation from all sources of potential. The switch must be in series with and on the supply...

46 CFR 111.95-7 - Wiring of boat winch components.

Code of Federal Regulations, 2014 CFR

2014-10-01

...-7 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Electric Power-Operated Boat Winches § 111.95-7 Wiring of boat winch... electric installation from all sources of potential. The switch must be in series with and on the supply...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

49 CFR 236.757 - Lock, electric.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials.

PubMed

Savaliya, Priten B; Thomas, Arun; Dua, Rishi; Dhawan, Anuj

2017-10-02

We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO 2 ) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO 2 film inside or around the nanoantennas, as the VO 2 film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

AC motor controller with 180 degree conductive switches

NASA Technical Reports Server (NTRS)

Oximberg, Carol A. (Inventor)

1995-01-01

An ac motor controller is operated by a modified time-switching scheme where the switches of the inverter are on for electrical-phase-and-rotation intervals of 180.degree. as opposed to the conventional 120.degree.. The motor is provided with three-phase drive windings, a power inverter for power supplied from a dc power source consisting of six switches, and a motor controller which controls the current controlled switches in voltage-fed mode. During full power, each switch is gated continuously for three successive intervals of 60.degree. and modulated for only one of said intervals. Thus, during each 60.degree. interval, the two switches with like signs are on continuously and the switch with the opposite sign is modulated.

Electrical resistivity well-logging system with solid-state electronic circuitry

USGS Publications Warehouse

Scott, James Henry; Farstad, Arnold J.

1977-01-01

An improved 4-channel electrical resistivity well-logging system for use with a passive probe with electrodes arranged in the 'normal' configuration has been designed and fabricated by Westinghouse Electric Corporation to meet technical specifications developed by the U.S. Geological Survey. Salient features of the system include solid-state switching and current regulation in the transmitter circuit to produce a constant-current source square wave, and synchronous solid-state switching and sampling of the potential waveform in the receiver circuit to provide an analog dc voltage proportions to the measured resistivity. Technical specifications and design details are included in this report.

Modelling Feedback Excitation, Pacemaker Properties and Sensory Switching of Electrically Coupled Brainstem Neurons Controlling Rhythmic Activity

PubMed Central

Hull, Michael J.; Soffe, Stephen R.; Willshaw, David J.; Roberts, Alan

2016-01-01

What cellular and network properties allow reliable neuronal rhythm generation or firing that can be started and stopped by brief synaptic inputs? We investigate rhythmic activity in an electrically-coupled population of brainstem neurons driving swimming locomotion in young frog tadpoles, and how activity is switched on and off by brief sensory stimulation. We build a computational model of 30 electrically-coupled conditional pacemaker neurons on one side of the tadpole hindbrain and spinal cord. Based on experimental estimates for neuron properties, population sizes, synapse strengths and connections, we show that: long-lasting, mutual, glutamatergic excitation between the neurons allows the network to sustain rhythmic pacemaker firing at swimming frequencies following brief synaptic excitation; activity persists but rhythm breaks down without electrical coupling; NMDA voltage-dependency doubles the range of synaptic feedback strengths generating sustained rhythm. The network can be switched on and off at short latency by brief synaptic excitation and inhibition. We demonstrate that a population of generic Hodgkin-Huxley type neurons coupled by glutamatergic excitatory feedback can generate sustained asynchronous firing switched on and off synaptically. We conclude that networks of neurons with NMDAR mediated feedback excitation can generate self-sustained activity following brief synaptic excitation. The frequency of activity is limited by the kinetics of the neuron membrane channels and can be stopped by brief inhibitory input. Network activity can be rhythmic at lower frequencies if the neurons are electrically coupled. Our key finding is that excitatory synaptic feedback within a population of neurons can produce switchable, stable, sustained firing without synaptic inhibition. PMID:26824331

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Air and water cooled modulator

DOEpatents

Birx, D.L.; Arnold, P.A.; Ball, D.G.; Cook, E.G.

1995-09-05

A compact high power magnetic compression apparatus and method are disclosed for delivering high voltage pulses of short duration at a high repetition rate and high peak power output which does not require the use of environmentally unacceptable fluids such as chlorofluorocarbons either as a dielectric or as a coolant, and which discharges very little waste heat into the surrounding air. A first magnetic switch has cooling channels formed therethrough to facilitate the removal of excess heat. The first magnetic switch is mounted on a printed circuit board. A pulse transformer comprised of a plurality of discrete electrically insulated and magnetically coupled units is also mounted on said printed board and is electrically coupled to the first magnetic switch. The pulse transformer also has cooling means attached thereto for removing heat from the pulse transformer. A second magnetic switch also having cooling means for removing excess heat is electrically coupled to the pulse transformer. Thus, the present invention is able to provide high voltage pulses of short duration at a high repetition rate and high peak power output without the use of environmentally unacceptable fluids and without discharging significant waste heat into the surrounding air. 9 figs.

33 CFR 183.402 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... and electrical control devices. Pigtails means external power conductors or wires that are part of electrical components and appliances, such as bilge pumps, blowers, lamps, switches, solenoids, and fuses...

33 CFR 183.402 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... and electrical control devices. Pigtails means external power conductors or wires that are part of electrical components and appliances, such as bilge pumps, blowers, lamps, switches, solenoids, and fuses...

33 CFR 183.402 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... and electrical control devices. Pigtails means external power conductors or wires that are part of electrical components and appliances, such as bilge pumps, blowers, lamps, switches, solenoids, and fuses...

32. TYPICAL BRYANT ITEMS FROM THE 1930S; TOP ROW LEFT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

32. TYPICAL BRYANT ITEMS FROM THE 1930S; TOP ROW LEFT TO RIGHT: PORCELAIN CASED SWITCH, ROTARY SWITCH, SHORTING PLUG TO BYPASS FUSE; SECOND ROW: BRASS INCANDESCENT LAMP SURFACE RECEPTACLE, INCANDESCENT LAMPHOLDER WITH ADAPTER FOR GLASS GLOBE; THIRD ROW: PORCELAIN BASE ROTARY SWITCH, APPLIANCE BREAKER WITH COVER REMOVED, APPLIANCE BREAKER - Bryant Electric Company, 1421 State Street, Bridgeport, Fairfield County, CT

Study of switching electric circuits with DC hybrid breaker, one stage

NASA Astrophysics Data System (ADS)

Niculescu, T.; Marcu, M.; Popescu, F. G.

2016-06-01

The paper presents a method of extinguishing the electric arc that occurs between the contacts of direct current breakers. The method consists of using an LC type extinguishing group to be optimally sized. From this point of view is presented a theoretical approach to the phenomena that occurs immediately after disconnecting the load and the specific diagrams are drawn. Using these, the elements extinguishing group we can choose. At the second part of the paper there is presented an analyses of the circuit switching process by decomposing the process in particular time sequences. For every time interval there was conceived a numerical simulation model in MATLAB-SIMULINK medium which integrates the characteristic differential equation and plots the capacitor voltage variation diagram and the circuit dumping current diagram.

Unravelling the switching mechanisms in electric field induced insulator-metal transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Rathi, Servin; Park, Jin-Hyung; Lee, In-yeal; Baik, Jeong Min; Yi, Kyung Soo; Kim, Gil-Ho

2014-07-01

We studied insulator-metal transitions in VO2 nanobeams for both abrupt and gradual changes in applied electric fields. Based on the observations, the Poole-Frenkel effect explained the abrupt transition, while the gradual case is found to be dominated by the Joule heating phenomenon. We also carried out power model and finite element method based simulations which supported the Joule heating phenomena for gradual transition. An in-principle demonstration of the Poole-Frenkel effect, performed using a square voltage pulse of 1 µs duration, further confirms the proposed insulator-metal transition mechanism with a switching time in the order of 100 ns. Finally, conductivity variations introduced via rapid thermal annealing at various temperatures validate the roles of both Joule heating and Poole-Frenkel mechanisms in the transitions.

Field-Controlled Electrical Switch with Liquid Metal.

PubMed

Wissman, James; Dickey, Michael D; Majidi, Carmel

2017-12-01

When immersed in an electrolyte, droplets of Ga-based liquid metal (LM) alloy can be manipulated in ways not possible with conventional electrocapillarity or electrowetting. This study demonstrates how LM electrochemistry can be exploited to coalesce and separate droplets under moderate voltages of ~1-10 V. This novel approach to droplet interaction can be explained with a theory that accounts for oxidation and reduction as well as fluidic instabilities. Based on simulations and experimental analysis, this study finds that droplet separation is governed by a unique limit-point instability that arises from gradients in bipolar electrochemical reactions that lead to gradients in interfacial tension. The LM coalescence and separation are used to create a field-programmable electrical switch. As with conventional relays or flip-flop latch circuits, the system can transition between bistable (separated or coalesced) states, making it useful for memory storage, logic, and shape-programmable circuitry using entirely liquids instead of solid-state materials.

Ultrathin reduced graphene oxide films as transparent top-contacts for light switchable solid-state molecular junctions.

PubMed

Li, Tao; Jevric, Martyn; Hauptmann, Jonas R; Hviid, Rune; Wei, Zhongming; Wang, Rui; Reeler, Nini E A; Thyrhaug, Erling; Petersen, Søren; Meyer, Jakob A S; Bovet, Nicolas; Vosch, Tom; Nygård, Jesper; Qiu, Xiaohui; Hu, Wenping; Liu, Yunqi; Solomon, Gemma C; Kjaergaard, Henrik G; Bjørnholm, Thomas; Nielsen, Mogens Brøndsted; Laursen, Bo W; Nørgaard, Kasper

2013-08-14

A new type of solid-state molecular junction is introduced, which employs reduced graphene oxide as a transparent top contact that permits a self-assembled molecular monolayer to be photoswitched in situ, while simultaneously enabling charge-transport measurements across the molecules. The electrical switching behavior of a less-studied molecular switch, dihydroazulene/vinylheptafulvene, is described, which is used as a test case. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced Electrical Materials and Components Being Developed

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

77 FR 2957 - Application for Manufacturing Authority, Liberty Pumps, Inc. (Submersible and Water Pumps...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-20

..., mechanical seals, electric motors, transformers, capacitors, switches, electronic components, integrated circuits, process controllers, printed circuit assemblies, electrical components, and measuring instruments...

Resistive switching characteristics of thermally oxidized TiN thin films

NASA Astrophysics Data System (ADS)

Biju, K. P.

2018-04-01

Resistive switching characteristics of thermally oxidized TiN thin films and mechanisms were investigated.XPS results indicates Ti-O content decreases with sputter etching and Ti 2p peak shift towards lower binding energy due to formation of Ti-O-N and Ti-N. Pt/TiO2/TiON/TiN stack exhibits both clockwise switching (CWS) and counter clockwise switching(CCWS) characteristic depending on polarity of the applied voltage. However the transition from CCWS to CWS is irreversible. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching in both CCWS and CWS might be due to inhomogeneous defect distribution due to thermal oxidation.

Design and Fabrication of a Strain-Powered Microelectromechanical System (MEMS) Switch

DTIC Science & Technology

2014-09-01

release showing uniform folding upwards; the top edge appears to be anchored to the substrate, which necessitated a mask rewrite after reducing...underdeveloped resist causing the switch to be anchored (left), thin-film shearing at the contact edge (right), and thin- film edge anchoring (right). Geometry...a “hip” joint and an “ ankle ” joint—while a center hinge was designed to fold down at a “knee” joint and make electrical contact with an electrical

E-field induced resistive switch in metal/praseodymium calcium manganite interfaces: A model for future nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Das, Nilanjan

Among the various candidates for non-volatile random access memory (RAM), interfacial resistive switch in Ag/Pr0.7Ca0.3 MnO3 (PCMO) configuration has drawn major attention in recent years due to its potential as a high storage density (˜ terabyte) device. However, the diverse nature of the resistive switch in different systems makes the development of a unifying model for its underlying physics very difficult. This dissertation will address both issues, namely, characterization of switches for device applications and development of a system-independent generic model, in detail. In our work, we have studied the properties electric pulse induced interfacial switch in electrode/PCMO system. A very fast speed ("write speed") of 100 ns, threshold ("programming voltage") as low as 2 V (for micro electrodes), and non-volatility ("data retention") of switched states have been achieved. A clear distinction between fast switch and sub-threshold slow quasistatic-dc switch has been made. Results obtained from time-dependence studies and impedance spectroscopy suggest that defect creation/annihilation, such as broken bonds (under very high field at interface, 107V/cm), is likely the mechanism for the sub-micros fast switching. On the other hand, slow accumulative process, such as electromigration of point defects, are responsible for the subthreshold quasi-dc switch. Scanning probe imaging has revealed the nanoscale inhomogeneity of the switched surfaces, essential for observing a resistive switch. Evolution of such structures has been observed under surface pre-training. Device scalability has been tested by creating reversible modification of surface conductivities with atomic force microscopy, thus creating the "nano-switch" (limited to a region of 10--100 nm).

On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

NASA Astrophysics Data System (ADS)

Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

2017-12-01

The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

Hardware Model of a Shipboard Zonal Electrical Distribution System (ZEDS): Alternating Current/Direct Current (AC/DC)

DTIC Science & Technology

2010-06-01

perfect example on how to lead, manage and strive for excellence in every aspect of your life. Your leadership is essential to fostering the loyalty ...share my success, I could not have ever achieved the level of satisfaction and enjoyment that I have. You will never understand how helpful the...A typical wall mounted light switch is a single pole single throw switch. A common industrial motor start switch is a three pole single throw switch

CPR (For Parents)

MedlinePlus

... or she is no longer in contact with electricity before offering assistance to prevent becoming electrocuted yourself. (For instance, turn off the source of electricity, such as a light switch or a circuit ...

46 CFR 113.35-7 - Electric engine order telegraph systems; operations.

Code of Federal Regulations, 2010 CFR

2010-10-01

... transmitter handle automatically connects that transmitter electrically to the engineroom indicator and simultaneously disconnects electrically all other transmitters. The reply pointers of all transmitters must... manually operated transfer switch which will disconnect the system in the unattended navigating bridge must...

Nonlinear Raman spectroscopy of liquid crystals: orientational alignment and switching behaviour in a ferroelectric liquid crystal mixture

NASA Astrophysics Data System (ADS)

Grofcsik, Andras

Picosecond inverse Raman spectroscopy has been employed to probe the alignment behaviour and switching characteristics of a 6 mum thick ferroelectric liquid crystal based on a host mixture of fluorinated phenyl biphenylcarboxylates and a chiral dopant. Optical bistability is observed in the Raman signal on application of dc electric fields of opposite polarity. For particular polarities of the applied field, the Raman signals display a cos4theta dependence on the angle of rotation around the beam direction. Reorientational rate constants of 300 mus and 590 mus are observed for the aromatic core at the high-voltage limit for the rise and decay of the 1600 cm-1 Raman signal on application of a switching ac electric field.

Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

2016-05-01

The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

System-state and operating condition sensitive control method and apparatus for electric power delivery systems

NASA Technical Reports Server (NTRS)

Burns, III, William Wesley (Inventor); Wilson, Thomas George (Inventor)

1978-01-01

This invention provides a method and apparatus for determining a precise switching sequence for the power switching elements of electric power delivery systems of the on-off switching type and which enables extremely fast transient response, precise regulation and highly stable operation. The control utilizes the values of the power delivery system power handling network components, a desired output characteristic, a system timing parameter, and the externally imposed operating conditions to determine where steady state operations should be in order to yield desired output characteristics for the given system specifications. The actual state of the power delivery system is continuously monitored and compared to a state-space boundary which is derived from the desired equilibrium condition, and from the information obtained from this comparison, the system is moved to the desired equilibrium condition in one cycle of switching control. Since the controller continuously monitors the power delivery system's externally imposed operating conditions, a change in the conditions is immediately sensed and a new equilibrium condition is determined and achieved, again in a single cycle of switching control.

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruverman, Alexei; Tsymbal, Evgeny Y.; Eom, Chang-Beom

2017-05-03

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modelingmore » of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.« less

Note: Novel trigger pulse feed method for mega-volt gas switch.

PubMed

Yin, Jiahui; Sun, Fengju; Jiang, Xiaofeng; Wang, Zhiguo; Liang, Tianxue; Jiang, Hongyu; Qiu, Aici

2017-07-01

It is difficult to feed the trigger pulse into an electrically triggered mega-volt switch, and the present note presents a novel trigger pulse feed method. The trigger pulse is introduced via a damping resistor, which is mounted between the inner and outer cylindrical electrodes of the pulse transmission line. The mega-volt pulse is damped because the voltage is resistively divided by the resistor and trigger cable arrangement. Both the complex breakdown processes of the switch and its insulation issues are experimentally studied. The function and the beneficial effects of the damping resistor, installed together with an additional inductor, are discussed. Finally, the parameters of these two damping components are set to 500 Ω and 2 μH values for which the switch has been demonstrated to work successfully at over 2.3 MV.

Mountain Plains Learning Experience Guide: Electrical Wiring. Course: Electrical Wiring Trim-Out.

ERIC Educational Resources Information Center

Arneson, R.; And Others

One of two individualized courses included in an electrical wiring curriculum, this course covers electrical materials installation for the trim-out stage. The course is comprised of five units: (1) Outlets, (2) Fixtures, (3) Switches, (4) Appliances, and (5) Miscellaneous. Each unit begins with a Unit Learning Experience Guide that gives…

All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Li; Chen, Jun-Yang; Wang, Jian-Ping, E-mail: jpwang@umn.edu, E-mail: moli@umn.edu

Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Hand-operated switches. 229.87 Section 229.87 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD LOCOMOTIVE SAFETY STANDARDS Safety Requirements Electrical System § 229...

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

PubMed

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

PubMed Central

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-01-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Probing the electrical switching of a memristive optical antenna by STEM EELS

PubMed Central

Schoen, David T.; Holsteen, Aaron L.; Brongersma, Mark L.

2016-01-01

The scaling of active photonic devices to deep-submicron length scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Plasmonics is providing new opportunities to circumvent this challenge. Here we provide evidence for a solid-state electro-optical switching mechanism that can operate in the visible spectral range with an active volume of less than (5 nm)3 or ∼10−6 λ3, comparable to the size of the smallest electronic components. The switching mechanism relies on electrochemically displacing metal atoms inside the nanometre-scale gap to electrically connect two crossed metallic wires forming a cross-point junction. These junctions afford extreme light concentration and display singular optical behaviour upon formation of a conductive channel. The active tuning of plasmonic antennas attached to such junctions is analysed using a combination of electrical and optical measurements as well as electron energy loss spectroscopy in a scanning transmission electron microscope. PMID:27412052

FAST OPENING SWITCH

DOEpatents

Bender, M.; Bennett, F.K.; Kuckes, A.F.

1963-09-17

A fast-acting electric switch is described for rapidly opening a circuit carrying large amounts of electrical power. A thin, conducting foil bridges a gap in this circuit and means are provided for producing a magnetic field and eddy currents in the foil, whereby the foil is rapidly broken to open the circuit across the gap. Advantageously the foil has a hole forming two narrow portions in the foil and the means producing the magnetic field and eddy currents comprises an annular coil having its annulus coaxial with the hole in the foil and turns adjacent the narrow portions of the foil. An electrical current flows through the coil to produce the magnetic field and eddy currents in the foil. (AEC)

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

NASA Technical Reports Server (NTRS)

Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

2011-01-01

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

Research on multi-switch synchronization based on single trigger generator

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Cheng, Xinbing; Yang, Jianhua; Yang, Xiao; Chen, Rong

2018-05-01

Multi-switch synchronous operation is an effective approach to provide high-voltage high-current for a high-power device. In this paper, we present a synchronization system with a corona stabilized triggered switch (CSTS) as main switch and an all-solid modularized quasi-square pulse forming system. In addition, this paper provides explanations of low jitter and accurate triggering of CSTS based on streamer theory. Different switches of the module are triggered by an electrical pulse created by a trigger generator, a quasi-square pulse can be created on the load. The experimental results show that it is able to switch voltages in excess of 40kV with nanosecond system jitter for three-module synchronous operation.

Numerical investigation of an all-optical switch in a graded nonlinear plasmonic grating.

PubMed

Wang, Guoxi; Lu, Hua; Liu, Xueming; Gong, Yongkang

2012-11-09

We have proposed and numerically investigated an all-optical switch based on a metal-insulator-metal waveguide with graded nonlinear plasmonic gratings. The influences of grating depth and refractive index of a Kerr nonlinear medium on the transmission of the switch are exactly analyzed by utilizing transmission line theory. The finite-difference time-domain simulation results show that the highly compact structure possesses excellent switch function by tuning the incident electric field intensity. In addition, the simulation results show that this all-optical switch has an ultrawide operating frequency regime and femtosecond-scale response time (~130 fs). Such a switch can find potential applications for all-optical signal processing and optical communication.

First-principles Study of Phonons in Structural Phase Change of Ge-Sb-Te Compounds

NASA Astrophysics Data System (ADS)

Song, Young-Sun; Kim, Jeongwoo; Kim, Minjae; Jhi, Seung-Hoon

Ge-Sb-Te (GST) compounds, exhibiting substantial electrical and optical contrast at extremely fast switching modes, have attracted great attention for application as non-volatile memory devices. Despite extensive studies of GST compounds, the underlying mechanism for fast transitions between amorphous and crystalline phases is yet to be revealed. We study the vibrational property of various GST compounds and the role of nitrogen doping on phase-change processes using first-principles calculations. We find that a certain vibrational mode (Eu) plays a crucial role to determine transition temperatures, and that its frequency depends on the amount of Ge in GST. We also find that the nitrogen doping drives crystalline-amorphous transition at low power consumption modes. In addition, we discuss the effect of the spin-orbit coupling on vibration modes, which is known essential for correct description of the electrical property of GST. Our understanding of phonon modes in GST compounds paves the way for the improving the device performance especially in terms of switching speed and operating voltage.

Indicator system provides complete data of engine cylinder pressure variation

NASA Technical Reports Server (NTRS)

Mc Jones, R. W.; Morgan, N. E.

1966-01-01

Varying reference pressure used together with a balanced pressure pickup /a diaphragm switch/ to switch the electric output of the pressure transducer in a reference pressure line obtains precise engine cylinder pressure data from a high speed internal combustion engine.

Design criteria monograph for actuators and operators

NASA Technical Reports Server (NTRS)

1974-01-01

Instrumentation for actuators and operators includes electrical position-indicating switches, potentiometers, and transducers and pressure-indicating switches and transducers. Monograph is based on critical evaluation of experiences and practices in design, test, and use of these control devices and instruments in operational space vehicles.

Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Qinli; Li, Yufan; Chien, Chia-ling

Provided is an electric-current-controllable magnetic unit, including: a substrate, an electric-current channel disposed on the substrate, the electric-current channel including a composite heavy-metal multilayer comprising at least one heavy-metal; a capping layer disposed over the electric-current channel; and at least one ferromagnetic layer disposed between the electric-current channel and the capping layer.

Resistive switching in TiO2 nanocolumn arrays electrochemically grown

NASA Astrophysics Data System (ADS)

Marik, M.; Mozalev, A.; Hubalek, J.; Bendova, M.

2017-04-01

Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2 nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2 nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2 nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.

Stress-induced reversible and irreversible ferroelectric domain switching

NASA Astrophysics Data System (ADS)

Chen, Zibin; Huang, Qianwei; Wang, Feifei; Ringer, Simon P.; Luo, Haosu; Liao, Xiaozhou

2018-04-01

Ferroelectric materials have been extensively explored for applications in electronic devices because of their ferroelectric/ferroelastic domain switching behaviour under electric bias or mechanical stress. Recent findings on applying mechanical loading to manipulate reversible logical signals in non-volatile ferroelectric memory devices make ferroelectric materials more attractive to scientists and engineers. However, the dynamical microscopic structural behaviour of ferroelectric domains under stress is not well understood, which limits the applications of ferroelectric/ferroelastic switching in memory devices. Here, the kinetics of reversible and irreversible ferroelectric domain switching induced by mechanical stress in relaxor-based ferroelectrics was explored. In-situ transmission electron microscopy investigation revealed that 90° ferroelastic and 180° ferroelectric domain switching can be induced by low and high mechanical stresses. The nucleation and growth of nanoscale domains overwhelm the defect-induced pinning effect on the stable micro-domain walls. This study provides deep insights for exploring the mechanical kinetics for ferroelectric/ferroelastic domains and a clear pathway to overcome the domain pinning effect of defects in ferroelectrics.

Algebraic methods in system theory

NASA Technical Reports Server (NTRS)

Brockett, R. W.; Willems, J. C.; Willsky, A. S.

1975-01-01

Investigations on problems of the type which arise in the control of switched electrical networks are reported. The main results concern the algebraic structure and stochastic aspects of these systems. Future reports will contain more detailed applications of these results to engineering studies.

Structural assessment of highway "N" power substation under earthquake loads.

DOT National Transportation Integrated Search

2009-10-01

In this study, the Highway N Substation was analyzed with a finite element model (FEM) for its vulnerability. The rigid bus and electric switch components were characterized with full scale shake table tests. Each component of the substation wa...

Switching plastic crystals of colloidal rods with electric fields

PubMed Central

Liu, Bing; Besseling, Thijs H.; Hermes, Michiel; Demirörs, Ahmet F.; Imhof, Arnout; van Blaaderen, Alfons

2014-01-01

When a crystal melts into a liquid both long-ranged positional and orientational order are lost, and long-time translational and rotational self-diffusion appear. Sometimes, these properties do not change at once, but in stages, allowing states of matter such as liquid crystals or plastic crystals with unique combinations of properties. Plastic crystals/glasses are characterized by long-ranged positional order/frozen-in-disorder but short-ranged orientational order, which is dynamic. Here we show by quantitative three-dimensional studies that charged rod-like colloidal particles form three-dimensional plastic crystals and glasses if their repulsions extend significantly beyond their length. These plastic phases can be reversibly switched to full crystals by an electric field. These new phases provide insight into the role of rotations in phase behaviour and could be useful for photonic applications. PMID:24446033

Switching plastic crystals of colloidal rods with electric fields

NASA Astrophysics Data System (ADS)

Liu, Bing; Besseling, Thijs H.; Hermes, Michiel; Demirörs, Ahmet F.; Imhof, Arnout; van Blaaderen, Alfons

2014-01-01

When a crystal melts into a liquid both long-ranged positional and orientational order are lost, and long-time translational and rotational self-diffusion appear. Sometimes, these properties do not change at once, but in stages, allowing states of matter such as liquid crystals or plastic crystals with unique combinations of properties. Plastic crystals/glasses are characterized by long-ranged positional order/frozen-in-disorder but short-ranged orientational order, which is dynamic. Here we show by quantitative three-dimensional studies that charged rod-like colloidal particles form three-dimensional plastic crystals and glasses if their repulsions extend significantly beyond their length. These plastic phases can be reversibly switched to full crystals by an electric field. These new phases provide insight into the role of rotations in phase behaviour and could be useful for photonic applications.

Study of seismic response and vibration control of High voltage electrical equipment damper based on TMD

NASA Astrophysics Data System (ADS)

Liu, Chuncheng; Wang, Chongyang; Mao, Long; Zha, Chuanming

2016-11-01

Substation high voltage electrical equipment such as mutual inductor, circuit interrupter, disconnecting switch, etc., has played a key role in maintaining the normal operation of the power system. When the earthquake disaster, the electrical equipment of the porcelain in the transformer substation is the most easily to damage, causing great economic losses. In this paper, using the method of numerical analysis, the establishment of a typical high voltage electrical equipment of three dimensional finite element model, to study the seismic response of a typical SF6 circuit breaker, at the same time, analysis and contrast the installation ring tuned mass damper (TMD damper for short), by changing the damper damping coefficient and the mass block, install annular TMD vibration control effect is studied. The results of the study for guiding the seismic design of high voltage electrical equipment to provide valuable reference.

29 CFR 1926.950 - General requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... means of disconnecting from electric energy is not visibly open or visibly locked out, the provisions of...: (a) All switches and disconnectors through which electric energy may be supplied to the particular... clearly see that the means of disconnecting from electric energy are visibly open or visibly locked-out...

29 CFR 1926.950 - General requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... means of disconnecting from electric energy is not visibly open or visibly locked out, the provisions of...: (a) All switches and disconnectors through which electric energy may be supplied to the particular... clearly see that the means of disconnecting from electric energy are visibly open or visibly locked-out...

29 CFR 1926.950 - General requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... means of disconnecting from electric energy is not visibly open or visibly locked out, the provisions of...: (a) All switches and disconnectors through which electric energy may be supplied to the particular... clearly see that the means of disconnecting from electric energy are visibly open or visibly locked-out...

29 CFR 1926.950 - General requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... means of disconnecting from electric energy is not visibly open or visibly locked out, the provisions of...: (a) All switches and disconnectors through which electric energy may be supplied to the particular... clearly see that the means of disconnecting from electric energy are visibly open or visibly locked-out...

Mountain Plains Learning Experience Guide: Electrical Wiring. Course: Electrical Wiring Rough-In.

ERIC Educational Resources Information Center

Arneson, R.; And Others

One of two individualized courses included in an electrical wiring curriculum, this course covers electrical installations that are generally hidden within the structure. The course is comprised of four units: (1) Outlet and Switch Boxes, (2) Wiring, (3) Service Entrance, and (4) Signal and Low Voltage Systems. Each unit begins with a Unit…

Coupling Inductor Based Hybrid Millimeter-Wave Switch

NASA Technical Reports Server (NTRS)

Gu, Qun (Inventor); Drouin, Brian J. (Inventor); Tang, Adrian J. (Inventor); Shu, Ran (Inventor)

2017-01-01

A switch comprising a plurality of inductors and a plurality of shunt transistors is described. Each inductor can be electrically coupled between adjacent shunt transistors to form a distributed switch structure. At least two inductors in the plurality of inductors can be inductively coupled with each other. The plurality of inductors can correspond to portions of a coupling inductor, wherein the coupling inductor can have an irregular octagonal shape.

A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Jason; Yu, Wensong; Sun, Pengwei

2012-03-31

The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105°C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling andmore » simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.« less

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

PubMed

Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

2018-03-28

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge 2 Sb 2 Te 5 ) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

NASA Astrophysics Data System (ADS)

Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

2018-05-01

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

14 CFR 23.1361 - Master switch arrangement.

Code of Federal Regulations, 2013 CFR

2013-01-01

... to allow ready disconnection of each electric power source from power distribution systems, except as... protective devices with a rating of five amperes or less adjacent to the electric power source. (3) In...

14 CFR 23.1361 - Master switch arrangement.

Code of Federal Regulations, 2014 CFR

2014-01-01

... to allow ready disconnection of each electric power source from power distribution systems, except as... protective devices with a rating of five amperes or less adjacent to the electric power source. (3) In...

14 CFR 23.1361 - Master switch arrangement.

Code of Federal Regulations, 2012 CFR

2012-01-01

... to allow ready disconnection of each electric power source from power distribution systems, except as... protective devices with a rating of five amperes or less adjacent to the electric power source. (3) In...

14 CFR 23.1361 - Master switch arrangement.

Code of Federal Regulations, 2011 CFR

2011-01-01

... to allow ready disconnection of each electric power source from power distribution systems, except as... protective devices with a rating of five amperes or less adjacent to the electric power source. (3) In...

46 CFR 169.681 - Disconnect switches and devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Machinery and Electrical Electrical Installations Operating at Potentials of 50 Volts Or More on Vessels of... controllers. (e) Disconnect means must be provided to open all conductors of generator and shore power cables...

Coupling electrokinetics with microbial biodegradation enhances the removal of cycloparaffinic hydrocarbons in soils.

PubMed

Yuan, Ye; Guo, Shuhai; Li, Fengmei; Wu, Bo; Yang, Xuelian; Li, Xuan

2016-12-15

An innovative approach that couples electrokinetics with microbial degradation to breakdown cycloparaffinic hydrocarbons in soils is described. Soils were spiked with cyclododecane, used as a model pollutant, at approximately 1000mgkg -1 . A mixture of petroleum-utilizing bacteria was added to achieve about 10 6 -10 7 CFUg -1 . Then, three treatments were applied for 25 days: (1) no electric field, control; (2) a constant voltage gradient of 1.3Vcm -1 in one direction; and (3) the same electric field, but with periodical switching of polarity. The degradation pathway of cyclododecane was not changed by the electric field, but the dynamic processes were remarkably enhanced, especially when the electric field was periodically switched. After 25 days, 79.9% and 87.0% of the cyclododecane was degraded in tests 2 and 3, respectively; both much higher than the 61.5% degraded in test 1. Analysis of the intermediate products strongly indicated that the competitive advantage of the electric field was the increase in ring-breaking of cyclododecane, resulting in greater concentrations of linear substances that were more susceptible to microbial attack, that is, β-oxidation. The conditions near the cathode were more favorable for the growth and metabolism of microorganisms, which also enhanced β-oxidation of the linear alkanoic acids. Therefore, when the electric field polarity was periodically switched, the functions of both the anode and cathode electrodes were applied across the whole soil cell, further increasing the degradation efficiency. Copyright © 2016 Elsevier B.V. All rights reserved.

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

PubMed

Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

2011-02-02

Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

30 CFR 57.12002 - Controls and switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Controls and switches. 57.12002 Section 57.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Electricity...

30 CFR 57.12002 - Controls and switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Controls and switches. 57.12002 Section 57.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Electricity...

30 CFR 57.12002 - Controls and switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Controls and switches. 57.12002 Section 57.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Electricity...

30 CFR 57.12002 - Controls and switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Controls and switches. 57.12002 Section 57.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Electricity...

Optically initiated silicon carbide high voltage switch

DOEpatents

Caporaso, George J [Livermore, CA; Sampayan, Stephen E [Manteca, CA; Sullivan, James S [Livermore, CA; Sanders,; David, M [Livermore, CA

2011-02-22

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Electro-optical switching and memory display device

DOEpatents

Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

1983-12-29

An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

Electro-optical switching and memory display device

DOEpatents

Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

1986-01-01

An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

Local control of the resistivity of graphene through mechanically induced switching of a ferroelectric superlattice

NASA Astrophysics Data System (ADS)

Humed Yusuf, Mohammed; Gura, Anna; Du, Xu; Dawber, Matthew

2017-06-01

We exploit nanoscale mechanically induced switching of an artificially layered ferroelectric material, used as an active substrate, to achieve the local manipulation of the electrical transport properties of graphene. In Graphene Ferroelectric Field Effect Transistors (GFeFETs), the graphene channel’s charge state is controlled by an underlying ferroelectric layer. The tip of an atomic force microscope (AFM) can be used to mechanically ‘write’ nanoscale regions of the graphene channel and ‘read’ off the modulation in the transport behavior. The written features associated with the switching of ferroelectric domains remain polarized until an electrical reset operation is carried out. Our result provides a method for flexible and reversible nano-scale manipulation of the transport properties of a broad class of 2D materials.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

UPS Hybrid Electric Delivery Van Testing | Transportation Research | NREL

Science.gov Websites

conventional diesel vans. Publications The following documents provide detailed information about the study the conventional vans during the on-road portion of the study. The two vehicle groups switched route assignments during the study period to provide a balanced review of the vans on the same routes. During

Transparent ceramic photo-optical semiconductor high power switches

DOEpatents

Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

2016-01-19

A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

Water heater control module

DOEpatents

Hammerstrom, Donald J

2013-11-26

An advanced electric water heater control system that interfaces with a high temperature cut-off thermostat and an upper regulating thermostat. The system includes a control module that is electrically connected to the high-temperature cut-off thermostat and the upper regulating thermostat. The control module includes a switch to open or close the high-temperature cut-off thermostat and the upper regulating thermostat. The control module further includes circuitry configured to control said switch in response to a signal selected from the group of an autonomous signal, a communicated signal, and combinations thereof.

Micro environmental sensing device

DOEpatents

Polosky, Marc A.; Lukens, Laurance L.

2006-05-02

A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

Investigation of the environmental implications of the CNT switch through its life cycle

NASA Astrophysics Data System (ADS)

Dahlben, Lindsay Johanna

Carbon nanotubes (CNTs) are unique allotropes of carbon that have high tensile strength, a high Young's modulus, good thermal conductivity, and depending on the CNT chirality can be metallic or semiconducting. These mechanical, thermal, and electrical properties make CNTs an attractive element in electronic applications such as conductive films, photovoltaics, non-volatile memory devices, batteries, sensors, and displays. Although commercialization of CNT-enabled products is increasing, there remains a significant lack of information regarding the health effects and environmental impacts of CNTs. Some studies have even shown that the behavior, toxicity, and persistence of CNTs may differ from bulk heterogeneous carbon. Given these uncertainties, it is prudent to assess the environmental attributes of CNT products and processes now to discover and potentially prevent adverse effects. This study investigates the environmental implications of a non-volatile bi-stable electromechanical CNT switch through its life cycle. Life cycle assessment (LCA) methodology is used to track the environmental impacts of the CNT switch through its fabrication and expected use and end-of-life (EOL) stages. Process parameters, energy consumption, input materials, output emissions, and yield efficiencies are determined for the laboratory and full-scale manufacture environments. The Ecoinvent(TM) inventory database and Eco-indicator 1999(TM) method are utilized for the impact assessment. Results for the fabrication stage are reported for highest contributions to environmental impact such as airborne inorganics, land use, and fossil fuels due to Au refining processes and electricity consumption. Extension of the LCA scope is evaluated for the potential replacement of CNT switches to current field-effect transistors (FETs) in flash memory for a cellular phone application. First-order predictions are made for the functionality and performance of the CNT switch during the use stage through an environmental perspective. Existing cellular phone EOL management options including recycling and direct disposal to landfill and incineration are evaluated for potential limitations, concerns, and environmental releases that may occur from the assimilation of CNT switch-enabled phones into the waste stream. In this manner, potential environmental effects of the CNT switch throughout its life cycle stages can be addressed alongside its technological development to ensure safe, sustainable, and successful CNT products.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

NASA Astrophysics Data System (ADS)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Pulse switching for high energy lasers

NASA Technical Reports Server (NTRS)

Laudenslager, J. B.; Pacala, T. J. (Inventor)

1981-01-01

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

High Ripples Reduction in DTC of Induction Motor by Using a New Reduced Switching Table

NASA Astrophysics Data System (ADS)

Mokhtari, Bachir; Benkhoris, Mohamed F.

2016-05-01

The direct torque and flux control (DTC) of electrical motors is characterized by ripples of torque and flux. Among the many solutions proposed to reduce them is to use modified switching tables which is very advantageous; because its implementation is easy and requires no additional cost compared to other solutions. This paper proposes a new reduced switching table (RST) to improve the DTC by reducing harmful ripples of torque and flux. This new switching table is smaller than the conventional one (CST) and depends principally at the flux error. This solution is studied by simulation under Matlab/Simulink and experimentally validated on a testbed with DSPACE1103. The results obtained of a DTC with RST applied to a three-phase induction motor (IM) show a good improvement and an effectiveness of proposed solution, the torque ripple decreases about 47% and 3% for the stator flux compared with a basic DTC.

Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

DOE PAGES

Ievlev, Anton V.; Morozovska, A. N.; Shur, Vladimir Ya.; ...

2015-06-19

The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction ofmore » the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.« less

Actively Q-switched, thulium-holmium-codoped fiber laser incorporating a silicon-based, variable-optical-attenuator-based Q switch.

PubMed

Jung, Minwan; Han Lee, Ju

2013-04-20

An actively Q-switched thulium-holmium-codoped fiber laser incorporating an Si-based variable optical attenuator (VOA) is experimentally demonstrated. It has been shown that an Si-based VOA with a response time of hundreds of nanoseconds can be used as a cost-effective 2 μm Q switch due to its extremely wide operating bandwidth from 1.5 to 2 μm, and low electrical power consumption. In our study, the laser's slope efficiency was measured to be ~17% at an operating wavelength of 1.89 μm. The repetition rate tuning range was from 20 to 80 kHz, which was limited by the optical damage threshold and the response time. The minimum temporal pulsewidth was measured to be ~184 ns at a modulation frequency of 20 kHz, and the corresponding maximum peak power was ~10 W.

Mechanical switching of ferroelectric domains beyond flexoelectricity

NASA Astrophysics Data System (ADS)

Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

2018-02-01

The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

46 CFR 111.01-13 - Limitations on porcelain use.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Limitations on porcelain use. 111.01-13 Section 111.01-13 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC... for lamp sockets, switches, receptacles, fuse blocks, or other electric equipment where the item is...

46 CFR 111.01-13 - Limitations on porcelain use.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Limitations on porcelain use. 111.01-13 Section 111.01-13 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC... for lamp sockets, switches, receptacles, fuse blocks, or other electric equipment where the item is...

46 CFR 111.01-13 - Limitations on porcelain use.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Limitations on porcelain use. 111.01-13 Section 111.01-13 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC... for lamp sockets, switches, receptacles, fuse blocks, or other electric equipment where the item is...

46 CFR 111.01-13 - Limitations on porcelain use.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Limitations on porcelain use. 111.01-13 Section 111.01-13 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC... for lamp sockets, switches, receptacles, fuse blocks, or other electric equipment where the item is...

Learning the Ropes with Electricity

ERIC Educational Resources Information Center

Carrier, Sarah; Rex, Ted

2013-01-01

This article presents a lesson plan that uses materials such as rope, drinking water, and straws in a classroom activity to teach elementary students about electrical circuits in a "hands on/minds on" fashion. Students first experiment with bulbs, wires, and switches, then they do an activity with simulating electricity through a circuit…

Functional nanometer-scale structures

NASA Astrophysics Data System (ADS)

Chan, Tsz On Mario

Nanometer-scale structures have properties that are fundamentally different from their bulk counterparts. Much research effort has been devoted in the past decades to explore new fabrication techniques, model the physical properties of these structures, and construct functional devices. The ability to manipulate and control the structure of matter at the nanoscale has made many new classes of materials available for the study of fundamental physical processes and potential applications. The interplay between fabrication techniques and physical understanding of the nanostructures and processes has revolutionized the physical and material sciences, providing far superior properties in materials for novel applications that benefit society. This thesis consists of two major aspects of my graduate research in nano-scale materials. In the first part (Chapters 3--6), a comprehensive study on the nanostructures based on electrospinning and thermal treatment is presented. Electrospinning is a well-established method for producing high-aspect-ratio fibrous structures, with fiber diameter ranging from 1 nm--1 microm. A polymeric solution is typically used as a precursor in electrospinning. In our study, the functionality of the nanostructure relies on both the nanostructure and material constituents. Metallic ions containing precursors were added to the polymeric precursor following a sol-gel process to prepare the solution suitable for electrospinning. A typical electrospinning process produces as-spun fibers containing both polymer and metallic salt precursors. Subsequent thermal treatments of the as-spun fibers were carried out in various conditions to produce desired structures. In most cases, polymer in the solution and the as-spun fibers acted as a backbone for the structure formation during the subsequent heat treatment, and were thermally removed in the final stage. Polymers were also designed to react with the metallic ion precursors during heat treatment in some cases, which led to desired chemical phase formation. The residue of polymer thermal decomposition was also controlled and utilized for certain functionality in some nanostructures. Throughout this study, we successfully fabricated several novel functional structures and revealed a new formation mechanism of metal/metal oxide nanotubes. The magnetic and electrical properties of these nanostructures were studied and optimized for applications in soft magnetic materials and spintronics devices. In the second part, (Chapter 7) a study on memristive switching devices with magnetron-sputtered metal-semiconductor-metal thin film structures based on ZnO is presented. Resistive random access memory (RRAM) is a new, non-volatile memory based on the memristor effect theoretically predicted by Leon Chua in 1971 and first experimentally demonstrated by Hewlett Packard in 2008. The unit cell of a RRAM (a memristor) is a two-terminal device in which the switching medium is sandwiched between the top and bottom electrodes and the resistance of the switching medium can be modulated by applying an electrical signal (current or voltage) to the electrodes. On the other hand, the significance of a memristor, as the fourth element of circuit elements besides resistor, capacitor and inductor, is not limited to just being a candidate for next-generation memory. Owing to the unique i-v characteristics of non-linear memristors that cannot be duplicated with any combinations of the other three basic elements in a passive circuitry, many new electrical functions are being developed based on the memristors. In our study, various contact electrode combinations and semiconductor doping profiles were utilized to achieve different functional resistive switching behaviors and to help fundamentally understand the underlying switching mechanisms in ZnO-based thin film structures. Two distinctive switching mechanisms (ferroelectric charge-induced resistive switching and dopant-induced filament-type resistive switching) have been identified in specified structures. Among them, the ferroelectric charge induced resistive switching is new to the existing mechanisms; and the crucial role of the electrode oxide layer in the filament type resistive switching was reported for the first time. Based on these studies, a unique structure that is believed to combine the two competing switching mechanisms was demonstrated. The new memory structure acts like a complimentary resistive switching memory (CRS) that is designed to eliminate the cross-talk issue in RRAM.

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

Reversible Control of Interfacial Magnetism through Ionic-Liquid-Assisted Polarization Switching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herklotz, Andreas; Guo, Er-Jia; Wong, Anthony T.

The ability to control magnetism of materials via electric field enables a myriad of technological innovations in information storage, sensing, and computing. In this paper, we use ionic-liquid-assisted ferroelectric switching to demonstrate reversible modulation of interfacial magnetism in a multiferroic heterostructure composed of ferromagnetic (FM) La 0.8Sr 0.2MnO 3 and ferroelectric (FE) PbZr 0.2Ti 0.8O 3. It is shown that ionic liquids can be used to persistently and reversibly switch a large area of a FE film. Finally, this is a prerequisite for polarized neutron reflectometry (PNR) studies that are conducted to directly probe magnetoelectric coupling of the FE polarizationmore » to the interfacial magnetization.« less

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

Reversible Control of Interfacial Magnetism through Ionic-Liquid-Assisted Polarization Switching

DOE PAGES

Herklotz, Andreas; Guo, Er-Jia; Wong, Anthony T.; ...

2017-02-06

The ability to control magnetism of materials via electric field enables a myriad of technological innovations in information storage, sensing, and computing. In this paper, we use ionic-liquid-assisted ferroelectric switching to demonstrate reversible modulation of interfacial magnetism in a multiferroic heterostructure composed of ferromagnetic (FM) La 0.8Sr 0.2MnO 3 and ferroelectric (FE) PbZr 0.2Ti 0.8O 3. It is shown that ionic liquids can be used to persistently and reversibly switch a large area of a FE film. Finally, this is a prerequisite for polarized neutron reflectometry (PNR) studies that are conducted to directly probe magnetoelectric coupling of the FE polarizationmore » to the interfacial magnetization.« less

Factors influencing the coupling between non-180° domain switching and lattice strain in perovskite piezoceramics

NASA Astrophysics Data System (ADS)

Kumar, Naveen; Khatua, Dipak Kumar; Mahale, Bhoopesh; Ranjan, Rajeev

2018-04-01

Domain switching and lattice strain are known to be important processes contributing to the large electromechanical response observed in perovskite-based piezoelectrics. However, there is a lack of clarity regarding the coupling between the two phenomena, and the factors which influence this coupling. Here, we report a systematic investigation to understand the factors influencing the coupling between domain switching and lattice strain in perovskite piezoelectrics by x-ray diffraction in situ with electric field. In a slight departure from the conventional approach, we employ a strategy which enables x-ray diffraction study in situ with electric field on randomly oriented piezoelectric grains in their unclamped (free) state. Experiments were carried out on two different systems (1 -x ) PbTi O3-(x ) BiSc O3 and (1 -x ) PbTi O3-(x ) PbZr O3 in their rhombohedral phase. We found that lattice strain along the nonpolar 〈100〉 R rhombohedral direction varies linearly with the non-180° domain switching fraction (η111). We introduce a parameter β to characterize the strength of coupling between the two phenomena and show that the coupling is enhanced when the system approaches the morphotropic phase boundary. We also demonstrate that the grain-to-grain interaction nearly doubles this coupling in a dense piezoelectric ceramic.

30 CFR 56.12002 - Controls and switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Controls and switches. 56.12002 Section 56.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity § 56...

30 CFR 56.12018 - Identification of power switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Identification of power switches. 56.12018 Section 56.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity...

30 CFR 56.12002 - Controls and switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Controls and switches. 56.12002 Section 56.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity § 56...

30 CFR 56.12018 - Identification of power switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Identification of power switches. 56.12018 Section 56.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity...

30 CFR 56.12002 - Controls and switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Controls and switches. 56.12002 Section 56.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity § 56...

30 CFR 56.12018 - Identification of power switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Identification of power switches. 56.12018 Section 56.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity...

30 CFR 56.12018 - Identification of power switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Identification of power switches. 56.12018 Section 56.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity...

30 CFR 56.12002 - Controls and switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Controls and switches. 56.12002 Section 56.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity § 56...

30 CFR 56.12002 - Controls and switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Controls and switches. 56.12002 Section 56.12002 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity § 56...

30 CFR 56.12018 - Identification of power switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Identification of power switches. 56.12018 Section 56.12018 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-SURFACE METAL AND NONMETAL MINES Electricity...

Alternative Fuels Data Center: Colonial Williamsburg Switches to

Science.gov Websites

Alternative TransportationA> Colonial Williamsburg Switches to Alternative Transportation to visitors with alternative fuel vehicles. For information about this project, contact Virginia Clean Cities Public Television Related Videos Photo of a car Electric Vehicles Charge up at State Parks in West

Evaluation of DC electric field distribution of PPLP specimen based on the measurement of electrical conductivity in LN2

NASA Astrophysics Data System (ADS)

Hwang, Jae-Sang; Seong, Jae-Kyu; Shin, Woo-Ju; Lee, Jong-Geon; Cho, Jeon-Wook; Ryoo, Hee-Suk; Lee, Bang-Wook

2013-11-01

High temperature superconducting (HTS) cable has been paid much attention due to its high efficiency and high current transportation capability, and it is also regarded as eco-friendly power cable for the next generation. Especially for DC HTS cable, it has more sustainable and stable properties compared to AC HTS cable due to the absence of AC loss in DC HTS cable. Recently, DC HTS cable has been investigated competitively all over the world, and one of the key components of DC HTS cable to be developed is a cable joint box considering HVDC environment. In order to achieve the optimum insulation design of the joint box, analysis of DC electric field distribution of the joint box is a fundamental process to develop DC HTS cable. Generally, AC electric field distribution depends on relative permittivity of dielectric materials but in case of DC, electrical conductivity of dielectric material is a dominant factor which determines electric field distribution. In this study, in order to evaluate DC electric field characteristics of the joint box for DC HTS cable, polypropylene laminated paper (PPLP) specimen has been prepared and its DC electric field distribution was analyzed based on the measurement of electrical conductivity of PPLP in liquid nitrogen (LN2). Electrical conductivity of PPLP in LN2 has not been reported yet but it should be measured for DC electric field analysis. The experimental works for measuring electrical conductivity of PPLP in LN2 were presented in this paper. Based on the experimental works, DC electric field distribution of PPLP specimen was fully analyzed considering the steady state and the transient state of DC. Consequently, it was possible to determine the electric field distribution characteristics considering different DC applying stages including DC switching on, DC switching off and polarity reversal conditions.

Searching for Electrical Properties, Phenomena and Mechanisms in the Construction and Function of Chromosomes

PubMed Central

Kanev, Ivan; Mei, Wai-Ning; Mizuno, Akira; DeHaai, Kristi; Sanmann, Jennifer; Hess, Michelle; Starr, Lois; Grove, Jennifer; Dave, Bhavana; Sanger, Warren

2013-01-01

Our studies reveal previously unidentified electrical properties of chromosomes: (1) chromosomes are amazingly similar in construction and function to electrical transformers; (2) chromosomes possess in their construction and function, components similar to those of electric generators, conductors, condensers, switches, and other components of electrical circuits; (3) chromosomes demonstrate in nano-scale level electromagnetic interactions, resonance, fusion and other phenomena similar to those described by equations in classical physics. These electrical properties and phenomena provide a possible explanation for unclear and poorly understood mechanisms in clinical genetics including: (a) electrically based mechanisms responsible for breaks, translocations, fusions, and other chromosomal abnormalities associated with cancer, intellectual disability, infertility, pregnancy loss, Down syndrome, and other genetic disorders; (b) electrically based mechanisms involved in crossing over, non-disjunction and other events during meiosis and mitosis; (c) mechanisms demonstrating heterochromatin to be electrically active and genetically important. PMID:24688715

Discharging a DC bus capacitor of an electrical converter system

DOEpatents

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2014-10-14

A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

Fully integrated graphene electronic biosensor for label-free detection of lead (II) ion based on G-quadruplex structure-switching.

PubMed

Li, Yijun; Wang, Cheng; Zhu, Yibo; Zhou, Xiaohong; Xiang, Yu; He, Miao; Zeng, Siyu

2017-03-15

This work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-free detection of lead ions (Pb 2+ ) in aqueous-media, which first implements the G-quadruplex structure-switching biosensing principle in graphene nanoelectronics. We experimentally illustrate the biomolecular interplay that G-rich DNA single-strands with one-end confined on graphene surface can specifically interact with Pb 2+ ions and switch into G-quadruplex structures. Since the structure-switching of electrically charged DNA strands can disrupt the charge distribution in the vicinity of graphene surface, the carrier equilibrium in graphene sheet might be altered, and manifested by the conductivity variation of GFET. The experimental data and theoretical analysis show that our devices are capable of the label-free and specific quantification of Pb 2+ with a detection limit down to 163.7ng/L. These results first verify the signaling principle competency of G-quadruplex structure-switching in graphene electronic biosensors. Combining with the advantages of the compact device structure and convenient electrical signal, a label-free GFET biosensor for Pb 2+ monitoring is enabled with promising application potential. Copyright © 2016 Elsevier B.V. All rights reserved.

Intelligent optical networking with photonic cross connections

NASA Astrophysics Data System (ADS)

Ceuppens, L.; Jerphagnon, Olivier L.; Lang, Jonathan; Banerjee, Ayan; Blumenthal, Daniel J.

2002-09-01

Optical amplification and dense wavelength division multiplexing (DWDM) have fundamentally changed optical transport networks. Now that these technologies are widely adopted, the bottleneck has moved from the outside line plant to nodal central offices, where electrical switching equipment has not kept pace. While OEO technology was (and still is) necessary for grooming and traffic aggregation, the transport network has dramatically changed, requiring a dramatic rethinking of how networks need to be designed and operated. While todays transport networks carry remarkable amounts of bandwidth, their optical layer is fundamentally static and provides for only simple point-to-point transport. Efficiently managing the growing number of wavelengths can only be achieved through a new breed of networking element. Photonic switching systems (PSS) can efficiently execute these functions because they are bit rate, wavelength, and protocol transparent. With their all-optical switch cores and interfaces, PSS can switch optical signals at various levels of granularity wavelength, sub band, and composite DWDM fiber levels. Though cross-connect systems with electrical switch cores are available, they perform these functions at very high capital costs and operational inefficiencies. This paper examines enabling technologies for deployment of intelligent optical transport networks (OTN), and takes a practical perspective on survivability architecture migration and implementation issues.

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

NASA Technical Reports Server (NTRS)

Jah, Muzar; Simon, Eric; Sharma, Ashok

2003-01-01

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian

2014-05-28

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in themore » conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.« less

Cu, Ag, Au: Electrical Resistivity Along their Melting Boundaries

NASA Astrophysics Data System (ADS)

Secco, R.; Littleton, J. A. H.; Berrada, M.; Ezenwa, I.; Yong, W.

2017-12-01

Electrical resistivity of Cu, Ag and Au was measured at pressures up to 5 GPa and temperatures up to 300 K above melting in a 1000-ton cubic anvil press. Two W/Re thermocouples placed at opposite ends of the wire sample served as T probes as well as 4-wire resistance electrodes in a switched circuit. A polarity switch was also used to remove any bias associated with current flow and voltage measurement using thermocouple legs. Examination of the composition of recovered and sectioned samples was carried out using electron microprobe analyses. Melting temperatures at high pressures were determined from the large jump in resistivity on heating at constant pressure and these agree well with previous experimental and theoretical phase diagram studies. With increasing P and T, electrical resistivity behavior in these noble metals is consistent with 1atm data. The resistivity values at the melting temperature of Cu and Ag decrease with increasing high pressure and Au seems to behave similarly. The results are compared to prediction by Stacey and Anderson (PEPI, 2001).

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

NASA Astrophysics Data System (ADS)

Aldana, S.; Roldán, J. B.; García-Fernández, P.; Suñe, J.; Romero-Zaliz, R.; Jiménez-Molinos, F.; Long, S.; Gómez-Campos, F.; Liu, M.

2018-04-01

A simulation tool based on a 3D kinetic Monte Carlo algorithm has been employed to analyse bipolar conductive bridge RAMs fabricated with Cu/HfOx/Pt stacks. Resistive switching mechanisms are described accounting for the electric field and temperature distributions within the dielectric. The formation and destruction of conductive filaments (CFs) are analysed taking into consideration redox reactions and the joint action of metal ion thermal diffusion and electric field induced drift. Filamentary conduction is considered when different percolation paths are formed in addition to other conventional transport mechanisms in dielectrics. The simulator was tuned by using the experimental data for Cu/HfOx/Pt bipolar devices that were fabricated. Our simulation tool allows for the study of different experimental results, in particular, the current variations due to the electric field changes between the filament tip and the electrode in the High Resistance State. In addition, the density of metallic atoms within the CF can also be characterized along with the corresponding CF resistance description.

Artificial neural network application for space station power system fault diagnosis

NASA Technical Reports Server (NTRS)

Momoh, James A.; Oliver, Walter E.; Dias, Lakshman G.

1995-01-01

This study presents a methodology for fault diagnosis using a Two-Stage Artificial Neural Network Clustering Algorithm. Previously, SPICE models of a 5-bus DC power distribution system with assumed constant output power during contingencies from the DDCU were used to evaluate the ANN's fault diagnosis capabilities. This on-going study uses EMTP models of the components (distribution lines, SPDU, TPDU, loads) and power sources (DDCU) of Space Station Alpha's electrical Power Distribution System as a basis for the ANN fault diagnostic tool. The results from the two studies are contrasted. In the event of a major fault, ground controllers need the ability to identify the type of fault, isolate the fault to the orbital replaceable unit level and provide the necessary information for the power management expert system to optimally determine a degraded-mode load schedule. To accomplish these goals, the electrical power distribution system's architecture can be subdivided into three major classes: DC-DC converter to loads, DC Switching Unit (DCSU) to Main bus Switching Unit (MBSU), and Power Sources to DCSU. Each class which has its own electrical characteristics and operations, requires a unique fault analysis philosophy. This study identifies these philosophies as Riddles 1, 2 and 3 respectively. The results of the on-going study addresses Riddle-1. It is concluded in this study that the combination of the EMTP models of the DDCU, distribution cables and electrical loads yields a more accurate model of the behavior and in addition yielded more accurate fault diagnosis using ANN versus the results obtained with the SPICE models.

Electrical equivalent circuit for microstrip micro-plasma: control of EM propagation and numerical simulations.

PubMed

Mohamad, Almustafa; Tân-Hoa, Vuong; Jacques, David

2012-01-01

An approach to determine an equivalent electrical circuit of a micro planar discharge on a microstrip printed circuit is reported. The micro discharge is used to realize a dynamic microwave switching circuit. This approach is based on the measurement of the discharge current and the transmission coefficient for a given frequency 2.45 GHz. Numerical methods like FEM can be used to study the effect of plasma parameters on the propagation of electromagnetic waves through a microstrip printed circuit. Plasma behaves as flexible elements that can change its electrical proprieties such as conductivity.