Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Resistive foil edge grading for accelerator and other high voltage structures

DOEpatents

Caporaso, George J.; Sampayan, Stephen F.; Sanders, David M.

2014-06-10

In a structure or device having a pair of electrical conductors separated by an insulator across which a voltage is placed, resistive layers are formed around the conductors to force the electric potential within the insulator to distribute more uniformly so as to decrease or eliminate electric field enhancement at the conductor edges. This is done by utilizing the properties of resistive layers to allow the voltage on the electrode to diffuse outwards, reducing the field stress at the conductor edge. Preferably, the resistive layer has a tapered resistivity, with a lower resistivity adjacent to the conductor and a higher resistivity away from the conductor. Generally, a resistive path across the insulator is provided, preferably by providing a resistive region in the bulk of the insulator, with the resistive layer extending over the resistive region.

Numerical Computation of Electric Field and Potential Along Silicone Rubber Insulators Under Contaminated and Dry Band Conditions

NASA Astrophysics Data System (ADS)

Arshad; Nekahi, A.; McMeekin, S. G.; Farzaneh, M.

2016-09-01

Electrical field distribution along the insulator surface is considered one of the important parameters for the performance evaluation of outdoor insulators. In this paper numerical simulations were carried out to investigate the electric field and potential distribution along silicone rubber insulators under various polluted and dry band conditions. Simulations were performed using commercially available simulation package Comsol Multiphysics based on the finite element method. Various pollution severity levels were simulated by changing the conductivity of pollution layer. Dry bands of 2 cm width were inserted at the high voltage end, ground end, middle part, shed, sheath, and at the junction of shed and sheath to investigate the effect of dry band location and width on electric field and potential distribution. Partial pollution conditions were simulated by applying pollution layer on the top and bottom surface respectively. It was observed from the simulation results that electric field intensity was higher at the metal electrode ends and at the junction of dry bands. Simulation results showed that potential distribution is nonlinear in the case of clean and partially polluted insulator and linear for uniform pollution layer. Dry band formation effect both potential and electric field distribution. Power dissipated along the insulator surface and the resultant heat generation was also studied. The results of this study could be useful in the selection of polymeric insulators for contaminated environments.

Improved insulator layer for MIS devices

NASA Technical Reports Server (NTRS)

Miller, W. E.

1980-01-01

Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

Efficient thermoelectric device

NASA Technical Reports Server (NTRS)

Ila, Daryush (Inventor)

2010-01-01

A high efficiency thermo electric device comprising a multi nanolayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanocrystals in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio.

Transparent flexible nanogenerator as self-powered sensor for transportation monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhong Lin; Hu, Youfan; Lin, Long

2016-06-14

A traffic sensor includes a flexible substrate having a top surface. A piezoelectric structure extends from the first electrode layer. The piezoelectric structure has a top end. An insulating layer is infused into the piezoelectric structure. A first electrode layer is disposed on top of the insulating layer. A second electrode layer is disposed below the flexible substrate. A packaging layer is disposed around the substrate, the first electrode layer, the piezoelectric structure, the insulating layer and the second electrode layer. In a method of sensing a traffic parameter, a piezoelectric nanostructure-based traffic sensor is applied to a roadway. Anmore » electrical event generated by the piezoelectric nanostructure-based traffic sensor in response to a vehicle interacting with the piezoelectric nanostructure-based traffic sensor is detected. The electrical event is correlated with the traffic parameter.« less

Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

NASA Astrophysics Data System (ADS)

Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

2016-12-01

We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

High thermal conductivity lossy dielectric using a multi layer configuration

DOEpatents

Tiegs, Terry N.; Kiggans, Jr., James O.

2003-01-01

Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

Insulated conductor temperature limited heater for subsurface heating coupled in a three-phase WYE configuration

DOEpatents

Vinegar, Harold J.; Sandberg, Chester Ledlie

2010-11-09

A heating system for a subsurface formation is described. The heating system includes a first heater, a second heater, and a third heater placed in an opening in the subsurface formation. Each heater includes: an electrical conductor; an insulation layer at least partially surrounding the electrical conductor; and an electrically conductive sheath at least partially surrounding the insulation layer. The electrical conductor is electrically coupled to the sheath at a lower end portion of the heater. The lower end portion is the portion of the heater distal from a surface of the opening. The first heater, the second heater, and the third heater are electrically coupled at the lower end portions of the heaters. The first heater, the second heater, and the third heater are configured to be electrically coupled in a three-phase wye configuration.

Molten Boron Phase-Change Thermal Energy Storage: Containment and Applicability to Microsatellites (Draft)

DTIC Science & Technology

2011-06-01

technologies, including high temperature thermal insulation and thermal to electric power conversion, have been evaluated, and a preliminary design...support technologies, including high temperature thermal insulation and thermal to electric power conversion, have been evaluated, and a preliminary...vacuum gap with low emissivity surfaces on either side as the first insulating layer.11 D. Electrical Energy Conversion There are a wide variety

Method of Fault Detection and Rerouting

NASA Technical Reports Server (NTRS)

Gibson, Tracy L. (Inventor); Medelius, Pedro J. (Inventor); Lewis, Mark E. (Inventor)

2013-01-01

A system and method for detecting damage in an electrical wire, including delivering at least one test electrical signal to an outer electrically conductive material in a continuous or non-continuous layer covering an electrically insulative material layer that covers an electrically conductive wire core. Detecting the test electrical signals in the outer conductive material layer to obtain data that is processed to identify damage in the outer electrically conductive material layer.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0

Photocapacitive image converter

NASA Technical Reports Server (NTRS)

Miller, W. E.; Sher, A.; Tsuo, Y. H. (Inventor)

1982-01-01

An apparatus for converting a radiant energy image into corresponding electrical signals including an image converter is described. The image converter includes a substrate of semiconductor material, an insulating layer on the front surface of the substrate, and an electrical contact on the back surface of the substrate. A first series of parallel transparent conductive stripes is on the insulating layer with a processing circuit connected to each of the conductive stripes for detecting the modulated voltages generated thereon. In a first embodiment of the invention, a modulated light stripe perpendicular to the conductive stripes scans the image converter. In a second embodiment a second insulating layer is deposited over the conductive stripes and a second series of parallel transparent conductive stripes perpendicular to the first series is on the second insulating layer. A different frequency current signal is applied to each of the second series of conductive stripes and a modulated image is applied to the image converter.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, E.I. Jr.; Peterson, K.A.; Barton, D.L.

1998-07-14

An electron beam apparatus and method for testing a circuit are disclosed. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 {micro}m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits. 7 figs.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, Jr., Edward I.; Peterson, Kenneth A.; Barton, Daniel L.

1998-01-01

An electron beam apparatus and method for testing a circuit. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 .mu.m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits.

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Thin film hydrogen sensor

DOEpatents

Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

1994-01-01

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Thin film hydrogen sensor

DOEpatents

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

The numerical model of multi-layer insulation with a defined wrapping pattern immersed in superfluid helium

NASA Astrophysics Data System (ADS)

Malecha, Ziemowit; Lubryka, Eliza

2017-11-01

The numerical model of thin layers, characterized by a defined wrapping pattern can be a crucial element of many computational problems related to engineering and science. A motivating example is found in multilayer electrical insulation, which is an important component of superconducting magnets and other cryogenic installations. The wrapping pattern of the insulation can significantly affect heat transport and the performance of the considered instruments. The major objective of this study is to develop the numerical boundary conditions (BC) needed to model the wrapping pattern of thin insulation. An example of the practical application of the proposed BC includes the heat transfer of Rutherford NbTi cables immersed in super-fluid helium (He II) across thin layers of electrical insulation. The proposed BC and a mathematical model of heat transfer in He II are implemented in the open source CFD toolbox OpenFOAM. The implemented mathematical model and the BC are compared in the experiments. The study confirms that the thermal resistance of electrical insulation can be lowered by implementing the proper wrapping pattern. The proposed BC can be useful in the study of new patterns for wrapping schemes. The work has been supported by statutory funds from Polish Ministry for Science and Higher Education for the year of 2017.

Capacitors Would Help Protect Against Hypervelocity Impacts

NASA Technical Reports Server (NTRS)

Edwards, David; Hubbs, Whitney; Hovater, Mary

2007-01-01

A proposal investigates alternatives to the present bumper method of protecting spacecraft against impacts of meteoroids and orbital debris. The proposed method is based on a British high-voltage-capacitance technique for protecting armored vehicles against shaped-charge warheads. A shield, according to the proposal, would include a bare metal outer layer separated by a gap from an inner metal layer covered with an electrically insulating material. The metal layers would constitute electrodes of a capacitor. A bias potential would be applied between the metal layers. A particle impinging at hypervelocity on the outer metal layer would break apart into a debris cloud that would penetrate the electrical insulation on the inner metal layer. The cloud would form a path along which electric current could flow between the metal layers, thereby causing the capacitor to discharge. With proper design, the discharge current would be large enough to vaporize the particles in the debris cloud to prevent penetration of the spacecraft. The shield design can be mass optimized to be competitive with existing bumper designs. Parametric studies were proposed to determine optimum correction between bias voltage, impacting particle velocity, gap space, and insulating material required to prevent spacecraft penetration.

Mechanical and electric characteristics of vacuum impregnated no-insulation HTS coil

NASA Astrophysics Data System (ADS)

Park, Heecheol; Kim, A.-rong; Kim, Seokho; Park, Minwon; Kim, Kwangmin; Park, Taejun

2014-09-01

For the conduction cooling application, epoxy impregnation is inevitable to enhance the thermal conduction. However, there have been several research results on the delamination problem with coated conductor and the main cause of the delamination is related with the different thermal contraction between epoxy, the insulation layer and the weak conductor. To avoid this problem, the amount of epoxy and insulation layer between conductors should be minimized or removed. Therefore, no insulation (NI) winding method and impregnation after dry winding can be considered to solve the problem. The NI coil winding method is very attractive due to high mechanical/thermal stability for the special purpose of DC magnets by removing the insulation layer. In this paper, the NI coil winding method and vacuum impregnation are applied to a HTS coil to avoid the delamination problem and enhance the mechanical/thermal stability for the conduction cooling application. Through the charging/discharging operation, electric/thermal characteristics are investigated at 77 K and 30 K.

Impedance Characterization of the Degradation of Insulating Layer Patterned on Interdigitated Microelectrode.

PubMed

Lee, Gihyun; Kim, Sohee; Cho, Sungbo

2015-10-01

Life-time and functionality of planar microelectrode-based devices are determined by not only the corrosion-resistance of the electrode, but also the durability of the insulation layer coated on the transmission lines. Degradation of the insulating layer exposed to a humid environment or solution may cause leakage current or signal loss, and a decrease in measurement sensitivity. In this study, degradation of SU-8, an epoxy-based negative photoresist and insulating material, patterned on Au interdigitated microelectrode (IDE) for long-term (>30 days) immersion in an electrolyte at 37 °C was investigated by electrical impedance spectroscopy and theoretical equivalent circuit modeling. From the experiment and simulation results, it was found that the degradation level of the insulating layer of the IDE electrode can be characterized by monitoring the resistance of the insulating layer among the circuit parameters of the designed equivalent circuit modeling.

Preparation and electrical properties of Cr 2O 3 gate insulator embedded with Fe dot

NASA Astrophysics Data System (ADS)

Yokota, Takeshi; Kuribayashi, Takaaki; Murata, Shotaro; Gomi, Manabu

2008-09-01

We investigated the electrical properties of a metal (Au)/insulator (magneto-electric materials: Cr 2O 3)/magnetic materials (Fe)/tunnel layer (Cr 2O 3)/semiconductor (Si) capacitor. This capacitor shows the typical capacitance-voltage ( C- V) properties of an Si-MIS capacitor with hysteresis depending on the Fe dispersibility which is determined by the deposition condition. The C- V curve of the only sample having a 0.5 nm Fe layer was seen to have a hysteresis window with a clockwise trace, indicating that electrons have been injected into the ultra-thin Fe layer. The samples having Fe layers of other thicknesses show a counterclockwise trace, which indicates that the film has mobile ionic charges due to the dispersed Fe. These results indicated that the charge-injection site, which works as a memory, in the Cr 2O 3 can be prepared by Fe insertion, which is deposited using well-controlled conditions. The results also revealed the possibility of an MIS capacitor containing both ferromagnetic materials and an ME insulating layer in a single system.

Multilayer modal actuator-based piezoelectric transformers.

PubMed

Huang, Yao-Tien; Wu, Wen-Jong; Wang, Yen-Chieh; Lee, Chih-Kung

2007-02-01

An innovative, multilayer piezoelectric transformer equipped with a full modal filtering input electrode is reported herein. This modal-shaped electrode, based on the orthogonal property of structural vibration modes, is characterized by full modal filtering to ensure that only the desired vibration mode is excited during operation. The newly developed piezoelectric transformer is comprised of three layers: a multilayered input layer, an insulation layer, and a single output layer. The electrode shape of the input layer is derived from its structural vibration modal shape, which takes advantage of the orthogonal property of the vibration modes to achieve a full modal filtering effect. The insulation layer possesses two functions: first, to couple the mechanical vibration energy between the input and output, and second, to provide electrical insulation between the two layers. To meet the two functions, a low temperature, co-fired ceramic (LTCC) was used to provide the high mechanical rigidity and high electrical insulation. It can be shown that this newly developed piezoelectric transformer has the advantage of possessing a more efficient energy transfer and a wider optimal working frequency range when compared to traditional piezoelectric transformers. A multilayer piezoelectric, transformer-based inverter applicable for use in LCD monitors or portable displays is presented as well.

Theory of topological insulator waveguides: polarization control and the enhancement of the magneto-electric effect

NASA Astrophysics Data System (ADS)

Crosse, J. A.

2017-02-01

Topological insulators subject to a time-reversal-symmetry-breaking perturbation are predicted to display a magneto-electric effect that causes the electric and magnetic induction fields to mix at the material’s surface. This effect induces polarization rotations of between ≈1-10 mrad per interface in an incident plane-polarized electromagnetic wave normal to a multilayered structure. Here we show, theoretically and numerically, that by using a waveguide geometry with a topological insulator guide layer and magneto-dielectric cladding it is possible to achieve rotations of ≈100 mrad and generate an elliptical polarization with only a three-layered structure. This geometry is beneficial, not only as a way to enhance the magneto-electric effect, rendering it easier to observe, but also as a method for controlling the polarization of electromagnetic radiation.

A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

PubMed

Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

2011-09-01

In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

Conformally encapsulated multi-electrode arrays with seamless insulation

DOEpatents

Tabada, Phillipe J.; Shah, Kedar G.; Tolosa, Vanessa; Pannu, Satinderall S.; Tooker, Angela; Delima, Terri; Sheth, Heeral; Felix, Sarah

2016-11-22

Thin-film multi-electrode arrays (MEA) having one or more electrically conductive beams conformally encapsulated in a seamless block of electrically insulating material, and methods of fabricating such MEAs using reproducible, microfabrication processes. One or more electrically conductive traces are formed on scaffold material that is subsequently removed to suspend the traces over a substrate by support portions of the trace beam in contact with the substrate. By encapsulating the suspended traces, either individually or together, with a single continuous layer of an electrically insulating material, a seamless block of electrically insulating material is formed that conforms to the shape of the trace beam structure, including any trace backings which provide suspension support. Electrical contacts, electrodes, or leads of the traces are exposed from the encapsulated trace beam structure by removing the substrate.

The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

NASA Astrophysics Data System (ADS)

Ivanov, P. A.; Potapov, A. S.; Kudoyarov, M. F.; Kozlovskii, M. A.; Samsonova, T. P.

2018-03-01

Irradiation of crystalline n-type silicon carbide ( n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been studied. The most high-ohmic ion-irradiated i-SiC layers with room-temperature resistivity of no less than 1.6 × 1013 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 107 Ω cm.

Evaluation of the Fretting Resistance of the High Voltage Insulation on the ITER Magnet Feeder Busbars

NASA Astrophysics Data System (ADS)

Clayton, N.; Crouchen, M.; Evans, D.; Gung, C.-Y.; Su, M.; Devred, A.; Piccin, R.

2017-12-01

The high voltage (HV) insulation on the ITER magnet feeder superconducting busbars and current leads will be prepared from S-glass fabric, pre-impregnated with an epoxy resin, which is interleaved with polyimide film and wrapped onto the components and cured during feeder manufacture. The insulation architecture consists of nine half-lapped layers of glass/Kapton, which is then enveloped in a ground-screen, and two further half-lapped layers of glass pre-preg for mechanical protection. The integrity of the HV insulation is critical in order to inhibit electrical arcs within the feeders. The insulation over the entire length of the HV components (bus bar, current leads and joints) must provide a level of voltage isolation of 30 kV. In operation, the insulation on ITER busbars will be subjected to high mechanical loads, arising from Lorentz forces, and in addition will be subjected to fretting erosion against stainless steel clamps, as the pulsed nature of some magnets results in longitudinal movement of the busbar. This work was aimed at assessing the wear on, and the changes in, the electrical properties of the insulation when subjected to typical ITER operating conditions. High voltage tests demonstrated that the electrical isolation of the insulation was intact after the fretting test.

Solid state transport-based thermoelectric converter

DOEpatents

Hu, Zhiyu

2010-04-13

A solid state thermoelectric converter includes a thermally insulating separator layer, a semiconducting collector and an electron emitter. The electron emitter comprises a metal nanoparticle layer or plurality of metal nanocatalyst particles disposed on one side of said separator layer. A first electrically conductive lead is electrically coupled to the electron emitter. The collector layer is disposed on the other side of the separator layer, wherein the thickness of the separator layer is less than 1 .mu.m. A second conductive lead is electrically coupled to the collector layer.

Theory of topological insulator waveguides: polarization control and the enhancement of the magneto-electric effect

PubMed Central

Crosse, J. A.

2017-01-01

Topological insulators subject to a time-reversal-symmetry-breaking perturbation are predicted to display a magneto-electric effect that causes the electric and magnetic induction fields to mix at the material’s surface. This effect induces polarization rotations of between ≈1–10 mrad per interface in an incident plane-polarized electromagnetic wave normal to a multilayered structure. Here we show, theoretically and numerically, that by using a waveguide geometry with a topological insulator guide layer and magneto-dielectric cladding it is possible to achieve rotations of ≈100 mrad and generate an elliptical polarization with only a three-layered structure. This geometry is beneficial, not only as a way to enhance the magneto-electric effect, rendering it easier to observe, but also as a method for controlling the polarization of electromagnetic radiation. PMID:28220875

Graphene as discharge layer for electron beam lithography on insulating substrate

NASA Astrophysics Data System (ADS)

Liu, Junku; Li, Qunqing; Ren, Mengxin; Zhang, Lihui; Chen, Mo; Fan, Shoushan

2013-09-01

Charging of insulating substrates is a common problem during Electron Beam lithography (EBL), which deflects the beam and distorts the pattern. A homogeneous, electrically conductive, and transparent graphene layer is used as a discharge layer for EBL processes on insulating substrates. The EBL resolution is improved compared with the metal discharge layer. Dense arrays of holes with diameters of 50 nm and gratings with line/space of 50/30 nm are obtained on quartz substrate. The pattern placement errors and proximity effect are suppressed over a large area and high quality complex nanostructures are fabricated using graphene as a conductive layer.

Thick film hydrogen sensor

DOEpatents

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Thick film hydrogen sensor

DOEpatents

Hoffheins, B.S.; Lauf, R.J.

1995-09-19

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

NASA Technical Reports Server (NTRS)

Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

2015-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Analysis of thermal performance of penetrated multi-layer insulation

NASA Technical Reports Server (NTRS)

Foster, Winfred A., Jr.; Jenkins, Rhonald M.; Yoo, Chai H.; Barrett, William E.

1988-01-01

Results of research performed for the purpose of studying the sensitivity of multi-layer insulation blanket performance caused by penetrations through the blanket are presented. The work described in this paper presents the experimental data obtained from thermal vacuum tests of various penetration geometries similar to those present on the Hubble Space Telescope. The data obtained from these tests is presented in terms of electrical power required sensitivity factors referenced to a multi-layer blanket without a penetration. The results of these experiments indicate that a significant increase in electrical power is required to overcome the radiation heat losses in the vicinity of the penetrations.

Analysis and comparison of magnetic sheet insulation tests

NASA Astrophysics Data System (ADS)

Marion-Péra, M. C.; Kedous-Lebouc, A.; Cornut, B.; Brissonneau, P.

1994-05-01

Magnetic circuits of electrical machines are divided into coated sheets in order to limit eddy currents. The surface insulation resistance of magnetic sheets is difficult to evaluate because it depends on parameters like pressure and covers a wide range of values. Two methods of measuring insulation resistance are analyzed: the standardized 'Franklin device' and a tester developed by British Steel Electrical. Their main drawback is poor local repeatability. The Franklin method allows better quality control of industrial process because it measures only one insulating layer at a time. It also gives more accurate images of the distribution of possible defects. Nevertheless, both methods lead to similar classifications of insulation efficiency.

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

PubMed Central

Katase, Takayoshi; Hiramatsu, Hidenori; Kamiya, Toshio; Hosono, Hideo

2014-01-01

A1–xFe2–ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave a conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron selenide channel and opens a way to explore high Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult. PMID:24591598

Microscopic theory of the Coulomb based exchange coupling in magnetic tunnel junctions.

PubMed

Udalov, O G; Beloborodov, I S

2017-05-04

We study interlayer exchange coupling based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction. This mechanism complements the known interaction between magnetic layers based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based coupling may exceed the hopping based exchange. We show that the Coulomb based exchange interaction, in contrast to the hopping based coupling, depends strongly on the dielectric constant of the insulating layer. The dependence of the interlayer exchange interaction on the dielectric properties of the insulating layer in magnetic tunnel junction is similar to magneto-electric effect where electric and magnetic degrees of freedom are coupled. We calculate the interlayer coupling as a function of temperature and electric field for magnetic tunnel junction with ferroelectric layer and show that the exchange interaction between magnetic leads has a sharp decrease in the vicinity of the ferroelectric phase transition and varies strongly with external electric field.

Improvement of the Reliability of Dielectrics for MLCC

NASA Astrophysics Data System (ADS)

Nakamura, Tomoyuki; Yao, Takayuki; Ikeda, Jun; Kubodera, Noriyuki; Takagi, Hiroshi

2011-10-01

To achieve enough reliability of monolithic ceramic capacitor, it is important to know the contribution of grain boundary and grain interior to its reliability and insulation resistance. As the number of grain boundaries per layer increased, mean time to failure (MTTF) increased. In addition, as the number of grain boundaries per layer increased, samples showed lower current leakage in the measured electric field range. Using these data, the grain boundary E-J curves were determined by simulation. As a result, temperature and electric field dependence of insulation resistance of grain boundary were very low. The insulation characteristics of one BaTiO3 grain per layer were examined. The resistance and reliability of grain interior were very low. To improve the degradation resistance of grain interior, Ca-doped BaTiO3-based dielectrics were developed. The influence of Ca substitution on MTTF was investigated and it was found out that MTTF increased with the increase of Ca substitution.

Spin Hall driven domain wall motion in magnetic bilayers coupled by a magnetic oxide interlayer

NASA Astrophysics Data System (ADS)

Liu, Yang; Furuta, Masaki; Zhu, Jian-Gang Jimmy

2018-05-01

mCell, previously proposed by our group, is a four-terminal magnetoresistive device with isolated write- and read-paths for all-spin logic and memory applications. A mCell requires an electric-insulating magnetic layer to couple the spin Hall driven write-path to the magnetic free layer of the read-path. Both paths are magnetic layers with perpendicular anisotropy and their perpendicularly oriented magnetization needs to be maintained with this insertion layer. We have developed a magnetic oxide (FeOx) insertion layer to serve for these purposes. We show that the FeOx insertion layer provides sufficient magnetic coupling between adjacent perpendicular magnetic layers. Resistance measurement shows that this magnetic oxide layer can act as an electric-insulating layer. In addition, spin Hall driven domain wall motion in magnetic bi-layers coupled by the FeOx insertion layer is significantly enhanced compared to that in magnetic single layer; it also requires low voltage threshold that poses possibility for power-efficient device applications.

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

Defect design of insulation systems for photovoltaic modules

NASA Technical Reports Server (NTRS)

Mon, G. R.

1981-01-01

A defect-design approach to sizing electrical insulation systems for terrestrial photovoltaic modules is presented. It consists of gathering voltage-breakdown statistics on various thicknesses of candidate insulation films where, for a designated voltage, module failure probabilities for enumerated thickness and number-of-layer film combinations are calculated. Cost analysis then selects the most economical insulation system. A manufacturing yield problem is solved to exemplify the technique. Results for unaged Mylar suggest using fewer layers of thicker films. Defect design incorporates effects of flaws in optimal insulation system selection, and obviates choosing a tolerable failure rate, since the optimization process accomplishes that. Exposure to weathering and voltage stress reduces the voltage-withstanding capability of module insulation films. Defect design, applied to aged polyester films, promises to yield reliable, cost-optimal insulation systems.

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Electrochemical cell having cylindrical electrode elements

DOEpatents

Nelson, Paul A.; Shimotake, Hiroshi

1982-01-01

A secondary, high temperature electrochemical cell especially adapted for lithium alloy negative electrodes, transition metal chalcogenide positive electrodes and alkali metal halide or alkaline earth metal halide electrolyte is disclosed. The cell is held within an elongated cylindrical container in which one of the active materials is filled around the outside surfaces of a plurality of perforate tubular current collectors along the length of the container. Each of the current collector tubes contain a concentric tubular layer of electrically insulative ceramic as an interelectrode separator. The active material of opposite polarity in elongated pin shape is positioned longitudinally within the separator layer. A second electrically conductive tube with perforate walls can be swagged or otherwise bonded to the outer surface of the pin as a current collector and the electrically insulative ceramic layer can be coated or otherwise layered onto the outer surface of this second current collector. Alternatively, the central pin electrode can include an axial core as a current collector.

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Molten metal holder furnace and casting system incorporating the molten metal holder furnace

DOEpatents

Kinosz, Michael J.; Meyer, Thomas N.

2003-02-11

A bottom heated holder furnace (12) for containing a supply of molten metal includes a storage vessel (30) having sidewalls (32) and a bottom wall (34) defining a molten metal receiving chamber (36). A furnace insulating layer (42) lines the molten metal receiving chamber (36). A thermally conductive heat exchanger block (54) is located at the bottom of the molten metal receiving chamber (36) for heating the supply of molten metal. The heat exchanger block (54) includes a bottom face (65), side faces (66), and a top face (67). The heat exchanger block (54) includes a plurality of electrical heaters (70) extending therein and projecting outward from at least one of the faces of the heat exchanger block (54), and further extending through the furnace insulating layer (42) and one of the sidewalls (32) of the storage vessel (30) for connection to a source of electrical power. A sealing layer (50) covers the bottom face (65) and side faces (66) of the heat exchanger block (54) such that the heat exchanger block (54) is substantially separated from contact with the furnace insulating layer (42).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jayakumar, R.; Martovetsky, N.N.; Perfect, S.A.

A glass-polyimide insulation system has been proposed by the US team for use in the Central Solenoid (CS) coil of the international Thermonuclear Experimental Reactor (ITER) machine and it is planned to use this system in the CS model coil inner module. The turn insulation will consist of 2 layers of combined prepreg and Kapton. Each layer is 50% overlapped with a butt wrap of prepreg and an overwrap of S glass. The coil layers will be separated by a glass-resin composite and impregnated in a VPI process. Small scale tests on the various components of the insulation are complete.more » It is planned to fabricate and test the insulation in a 4 x 4 insulated CS conductor array which will include the layer insulation and be vacuum impregnated. The conductor array will be subjected to 20 thermal cycles and 100000 mechanical load cycles in a Liquid Nitrogen environment. These loads are similar to those seen in the CS coil design. The insulation will be electrically tested at several stages during mechanical testing. This paper will describe the array configuration, fabrication: process, instrumentation, testing configuration, and supporting analyses used in selecting the array and test configurations.« less

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, G.J.; Sampayan, S.E.; Kirbie, H.C.

1998-10-13

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 12 figs.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

DOEpatents

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Effect of sheath material and reaction overpressure on Ag protrusions into the TiO2 insulation coating of Bi-2212 round wire

NASA Astrophysics Data System (ADS)

Hossain, I.; Jiang, J.; Matras, M.; Trociewitz, U. P.; Lu, J.; Kametani, F.; Larbalestier, D.; Hellstrom, E.

2017-12-01

In order to develop a high current density in coils, Bi-2212 wires must be electrically discrete in tight winding packs. It is vital to use an insulating layer that is thin, fulfils the dielectric requirements, and can survive the heat treatment whose maximum temperature reaches 890 °C in oxygen. A thin (20-30 µm) ceramic coating could be better as the insulating layer compared to alumino-silicate braided fiber insulation, which is about 150 μm thick and reacts with the Ag sheathed Bi-2212 wire during heat treatment. At present, TiO2 seems to be the most viable ceramic material for such a thin insulation because it is chemically compatible with Ag and Bi-2212 and its sintering temperature is lower than the maximum temperature used for the Bi-2212 heat treatment. However, recent tests of a large Bi-2212 coil insulated only with TiO2 showed severe electrical shorting between the wires after over pressure heat treatment (OPHT). The origin of the shorting was frequent silver protrusions into the porous TiO2 layer that electrically connected adjacent Bi-2212 wires. To understand the mechanism of this unexpected behaviour, we investigated the effect of sheath material and hydrostatic pressure on Ag protrusions. We found that Ag protrusions occur only when TiO2-insulated Ag-0.2%Mg sheathed wire (Ag(Mg) wire) undergoes OPHT at 50 bar. No Ag protrusions were observed when the TiO2-insulated Ag(Mg) wire was processed at 1 bar. The TiO2-insulated wires sheathed with pure Ag that underwent 50 bar OPHT were also free from Ag protrusions. A key finding is that the Ag protrusions from the Ag(Mg) sheath actually contain no MgO, suggesting that local depletion of MgO facilitates local, heterogeneous deformation of the sheath under hydrostatic overpressure. Our study also suggests that predensifying the Ag(Mg) wire before insulating it with TiO2 and doing the final OPHT can potentially limit Ag protrusions.

Light emitting ceramic device

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2010-05-18

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Thermal performance of a liquid hydrogen tank multilayer insulation system at warm boundary temperatures of 630, 530, and 152 R

NASA Astrophysics Data System (ADS)

Stochl, Robert J.; Knoll, Richard H.

1991-06-01

The results are presented of a study conducted to obtain experimental heat transfer data on a liquid hydrogen tank insulated with 34 layers of MLI (multilayer insulation) for warm side boundary temperatures of 630, 530, and 150 R. The MLI system consisted of two blankets, each blanket made up of alternate layers of double silk net (16 layers) and double aluminized Mylar radiation shields (15 layers) contained between two cover sheets of Dacron scrim reinforced Mylar. The insulation system was designed for and installed on a 87.6 in diameter liquid hydrogen tank. Nominal layer density of the insulation blankets is 45 layers/in. The insulation system contained penetrations for structural support, plumbing, and electrical wiring that would be representative of a cryogenic spacecraft. The total steady state heat transfer rates into the test tank for shroud temperatures of 630, 530, 152 R were 164.4, 95.8, and 15.9 BTU/hr respectively. The noninsulation heat leaks into the tank (12 fiberglass support struts, tank plumbing, and instrumentation lines) represent between 13 to 17 pct. of the total heat input. The heat input values would translate to liquid H2 losses of 2.3, 1.3, and 0.2 pct/day, with the tank held at atmospheric pressure.

Thermal performance of a liquid hydrogen tank multilayer insulation system at warm boundary temperatures of 630, 530, and 152 R

NASA Astrophysics Data System (ADS)

Stochl, Robert J.; Knoll, Richard H.

1991-06-01

The results are presented of a study conducted to obtain experimental heat transfer data on a liquid hydrogen tank insulated with 34 layers of MLI (multilayer insulation) for warm side boundary temperatures of 630, 530, and 150 R. The MLI system consisted of two blankets, each blanket made up of alternate layers of double silk net (16 layers) and double aluminized Mylar radiation shields (15 layers) contained between two cover sheets of Dacron scrim reinforced Mylar. The insulation system was designed for and installed on an 87.6 in. diameter liquid hydrogen tank. Nominal layer density of the insulation blankets is 45 layers/in. The insulation system contained penetrations for structural support, plumbing, and electrical wiring that would be representative of a cryogenic spacecraft. The total steady state heat transfer rates into the test tank for shroud temperatures of 630, 530, 152 R were 164.4, 95.8, and 15.9 BTU/hr, respectively. The noninsulation heat leaks into the tank (12 fiberglass support struts, tank plumbing, and instrumentation lines) represent between 13 to 17 pct. of the total heat input. The heat input values would translate to liquid H2 losses of 2.3, 1.3, and 0.2 pct/day, with the tank held at atmospheric pressure.

Single layer multi-color luminescent display and method of making

NASA Technical Reports Server (NTRS)

Robertson, James B. (Inventor)

1992-01-01

The invention is a multi-color luminescent display comprising an insulator substrate and a single layer of host material, which may be a phosphor deposited thereon that hosts one or more different impurities, therein forming a pattern of selected and distinctly colored phosphors such as blue, green, and red phosphors in a single layer of host material. Transparent electrical conductor means may be provided for subjecting selected portions of the pattern of colored phosphors to an electric field, thereby forming a multi-color, single layer electroluminescent display. A method of forming a multi-color luminescent display includes the steps of depositing on an insulator substrate a single layer of host material, which itself may be a phosphor, with the properties to host varying quantities of different impurities and introducing one or more of said different impurities into selected areas of the said single layer of host material by thermal diffusion or ion implantation to form a pattern of phosphors of different colors in the said single layer of host material.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

1998-01-01

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

Highly insulating ferromagnetic cobaltite heterostructures

DOE PAGES

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

2017-04-02

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

Highly insulating ferromagnetic cobaltite heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

Nanofabrication of insulated scanning probes for electromechanical imaging in liquid solutions

PubMed Central

Noh, Joo Hyon; Nikiforov, Maxim; Kalinin, Sergei V.; Vertegel, Alexey A.; Rack, Philip D.

2011-01-01

In this paper, the fabrication and electrical and electromechanical characterization of insulated scanning probes have been demonstrated in liquid solutions. The silicon cantilevers were sequentially coated with chromium and silicon dioxide, and the silicon dioxide was selectively etched at tip apex using focused electron beam induced etching (FEBIE) with XeF2 The chromium layer acted not only as the conductive path from the tip, but also as an etch resistant layer. This insulated scanning probe fabrication process is compatible with any commercial AFM tip and can be used to easily tailor the scanning probe tip properties because FEBIE does not require lithography. The suitability of the fabricated probes is demonstrated by imaging of standard topographical calibration grid as well as piezoresponse force microscopy (PFM) and electrical measurements in ambient and liquid environments. PMID:20702930

Electrically insulated MLI and thermal anchor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamiya, Koji; Furukawa, Masato; Murakami, Haruyuki

2014-01-29

The thermal shield of JT-60SA is kept at 80 K and will use the multilayer insulation (MLI) to reduce radiation heat load to the superconducting coils at 4.4 K from the cryostat at 300 K. Due to plasma pulse operation, the MLI is affected by eddy current in toroidal direction. The MLI is designed to suppress the current by electrically insulating every 20 degree in the toroidal direction by covering the MLI with polyimide films. In this paper, two kinds of designs for the MLI system are proposed, focusing on a way to overlap the layers. A boil-off calorimeter methodmore » and temperature measurement has been performed to determine the thermal performance of the MLI system. The design of the electrical insulated thermal anchor between the toroidal field (TF) coil and the thermal shield is also explained.« less

Polymer Coating of Carbon Nanotube Fibers for Electric Microcables

PubMed Central

Alvarez, Noe T.; Ochmann, Timothy; Kienzle, Nicholas; Ruff, Brad; Haase, Mark R.; Hopkins, Tracy; Pixley, Sarah; Mast, David; Schulz, Mark J.; Shanov, Vesselin

2014-01-01

Carbon nanotubes (CNTs) are considered the most promising candidates to replace Cu and Al in a large number of electrical, mechanical and thermal applications. Although most CNT industrial applications require macro and micro size CNT fiber assemblies, several techniques to make conducting CNT fibers, threads, yarns and ropes have been reported to this day, and improvement of their electrical and mechanical conductivity continues. Some electrical applications of these CNT conducting fibers require an insulating layer for electrical insulation and protection against mechanical tearing. Ideally, a flexible insulator such as hydrogenated nitrile butadiene rubber (HNBR) on the CNT fiber can allow fabrication of CNT coils that can be assembled into lightweight, corrosion resistant electrical motors and transformers. HNBR is a largely used commercial polymer that unlike other cable-coating polymers such as polyvinyl chloride (PVC), it provides unique continuous and uniform coating on the CNT fibers. The polymer coated/insulated CNT fibers have a 26.54 μm average diameter—which is approximately four times the diameter of a red blood cell—is produced by a simple dip-coating process. Our results confirm that HNBR in solution creates a few microns uniform insulation and mechanical protection over a CNT fiber that is used as the electrically conducting core. PMID:28344254

Polymer Coating of Carbon Nanotube Fibers for Electric Microcables.

PubMed

Alvarez, Noe T; Ochmann, Timothy; Kienzle, Nicholas; Ruff, Brad; Haase, Mark R; Hopkins, Tracy; Pixley, Sarah; Mast, David; Schulz, Mark J; Shanov, Vesselin

2014-11-04

Carbon nanotubes (CNTs) are considered the most promising candidates to replace Cu and Al in a large number of electrical, mechanical and thermal applications. Although most CNT industrial applications require macro and micro size CNT fiber assemblies, several techniques to make conducting CNT fibers, threads, yarns and ropes have been reported to this day, and improvement of their electrical and mechanical conductivity continues. Some electrical applications of these CNT conducting fibers require an insulating layer for electrical insulation and protection against mechanical tearing. Ideally, a flexible insulator such as hydrogenated nitrile butadiene rubber (HNBR) on the CNT fiber can allow fabrication of CNT coils that can be assembled into lightweight, corrosion resistant electrical motors and transformers. HNBR is a largely used commercial polymer that unlike other cable-coating polymers such as polyvinyl chloride (PVC), it provides unique continuous and uniform coating on the CNT fibers. The polymer coated/insulated CNT fibers have a 26.54 μm average diameter-which is approximately four times the diameter of a red blood cell-is produced by a simple dip-coating process. Our results confirm that HNBR in solution creates a few microns uniform insulation and mechanical protection over a CNT fiber that is used as the electrically conducting core.

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

NASA Technical Reports Server (NTRS)

Theofylaktos, Onoufrios (Inventor); Meador, Michael A. (Inventor); Miranda, Felix A. (Inventor); Pinto, Nicholas (Inventor); Mueller, Carl H. (Inventor); Santos-Perez, Javier (Inventor)

2017-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Linear Stability of Relativistic Space-Charge Flow in a Magnetically Insulated Transmission Line Oscillator

DTIC Science & Technology

1989-04-01

MILO Magnetica fy insulated transmission line Slow-wave structure Relativistic Brillouin flow Space-charge waves Slow electromagnetic waves (over) 19... resonant layer always see a decelerating axial electric field. Consequently, field energy increases at the expense of particle energy. 17 AFWL-TR-88-103...Ve). If ve is greater than the structure coupling velocity, a resonant layer of electrons will always be present, and oscillations will occur at any

Electron drag in ferromagnetic structures separated by an insulating interface

NASA Astrophysics Data System (ADS)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

All-Elastomer 3-Axis Contact Resistive Tactile Sensor Arrays and Micromilled Manufacturing Methods Thereof

NASA Technical Reports Server (NTRS)

Penskiy, Ivan (Inventor); Charalambides, Alexandros (Inventor); Bergbreiter, Sarah (Inventor)

2018-01-01

At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.

Electron gas at the interface between two antiferromagnetic insulating manganites

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Salafranca, J.; Brey, L.

2008-07-01

We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3 , a strong correlated insulator, and CaMnO3 , a band insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron-gas density by selective doping is also discussed.

Chemical Intercalation of Topological Insulator Grid Nanostructures for High-Performance Transparent Electrodes.

PubMed

Guo, Yunfan; Zhou, Jinyuan; Liu, Yujing; Zhou, Xu; Yao, Fengrui; Tan, Congwei; Wu, Jinxiong; Lin, Li; Liu, Kaihui; Liu, Zhongfan; Peng, Hailin

2017-11-01

2D layered nanomaterials with strong covalent bonding within layers and weak van der Waals' interactions between layers have attracted tremendous interest in recent years. Layered Bi 2 Se 3 is a representative topological insulator material in this family, which holds promise for exploration of the fundamental physics and practical applications such as transparent electrode. Here, a simultaneous enhancement of optical transmittancy and electrical conductivity in Bi 2 Se 3 grid electrodes by copper-atom intercalation is presented. These Cu-intercalated 2D Bi 2 Se 3 electrodes exhibit high uniformity over large area and excellent stabilities to environmental perturbations, such as UV light, thermal fluctuation, and mechanical distortion. Remarkably, by intercalating a high density of copper atoms, the electrical and optical performance of Bi 2 Se 3 grid electrodes is greatly improved from 900 Ω sq -1 , 68% to 300 Ω sq -1 , 82% in the visible range; with better performance of 300 Ω sq -1 , 91% achieved in the near-infrared region. These unique properties of Cu-intercalated topological insulator grid nanostructures may boost their potential applications in high-performance optoelectronics, especially for infrared optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0-1) on an insulator by Al-induced layer exchange

NASA Astrophysics Data System (ADS)

Toko, K.; Kusano, K.; Nakata, M.; Suemasu, T.

2017-10-01

A composition tunable Si1-xGex alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si1-xGex on an insulator. The ALILE allowed Si1-xGex to be large grained (> 50 μm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (≤ 400 °C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si1-xGex layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si1-xGex layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on three-dimensional integrated circuits, glass, and even a plastic substrate.

Fully synthetic taped insulation cables

DOEpatents

Forsyth, Eric B.; Muller, Albert C.

1984-01-01

A high voltage oil-impregnated electrical cable with fully polymer taped insulation operable to 765 kV. Biaxially oriented, specially processed, polyethylene, polybutene or polypropylene tape with an embossed pattern is wound in multiple layers over a conductive core with a permeable screen around the insulation. Conventional oil which closely matches the dielectric constant of the tape is used, and the cable can be impregnated after field installation because of its excellent impregnation characteristics.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

1998-07-28

A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

Passive electrically switchable circuit element having improved tunability and method for its manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickel, Patrick R; James, Conrad D

2014-09-16

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Three-dimensional concentration of light in deeply sub-wavelength, laterally tapered gap-plasmon nanocavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tagliabue, Giulia; Thomas J. Watson, Sr. Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125; Poulikakos, Dimos

2016-05-30

Gap-plasmons (GP) in metal-insulator-metal (MIM) structures have shown exceptional performance in guiding and concentrating light within deep subwavelength layers. Reported designs to date exploit tapered thicknesses of the insulating layer in order to confine and focus the GP mode. Here, we propose a mechanism for the three dimensional concentration of light in planar MIM structures which exploits exclusively the lateral tapering of the front metallic layer while keeping a constant thickness of the insulating layer. We demonstrate that an array of tapered planar GP nanocavities can efficiently concentrate light in all three dimensions. A semi-analytical, one-dimensional model provides understanding ofmore » the underlying physics and approximately predicts the behavior of the structure. Three-dimensional simulations are then used to precisely calculate the optical behavior. Cavities with effective volumes as small as 10{sup −5} λ{sup 3} are achieved in an ultrathin MIM configuration. Our design is inherently capable of efficiently coupling with free-space radiation. In addition, being composed of two electrically continuous layers separated by an ultrathin dielectric spacer, it could find interesting applications in the area of active metamaterials or plasmonic photocatalysis where both electrical access and light concentration are required.« less

Enhanced dielectric-wall linear accelerator

DOEpatents

Sampayan, S.E.; Caporaso, G.J.; Kirbie, H.C.

1998-09-22

A dielectric-wall linear accelerator is enhanced by a high-voltage, fast e-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface. 6 figs.

Enhanced dielectric-wall linear accelerator

DOEpatents

Sampayan, Stephen E.; Caporaso, George J.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is enhanced by a high-voltage, fast e-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Vacuum-surface flashover switch with cantilever conductors

DOEpatents

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

2001-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Light emitting ceramic device and method for fabricating the same

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2004-11-30

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Alternating Current Driven Organic Light Emitting Diodes Using Lithium Fluoride Insulating Layers

PubMed Central

Liu, Shang-Yi; Chang, Jung-Hung; -Wen Wu, I.; Wu, Chih-I

2014-01-01

We demonstrate an alternating current (AC)-driven organic light emitting diodes (OLED) with lithium fluoride (LiF) insulating layers fabricated using simple thermal evaporation. Thermal evaporated LiF provides high stability and excellent capacitance for insulating layers in AC devices. The device requires a relatively low turn-on voltage of 7.1 V with maximum luminance of 87 cd/m2 obtained at 10 kHz and 15 Vrms. Ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy are employed simultaneously to examine the electronic band structure of the materials in AC-driven OLED and to elucidate the operating mechanism, optical properties and electrical characteristics. The time-resolved luminance is also used to verify the device performance when driven by AC voltage. PMID:25523436

Magnetic and electrical control of engineered materials

DOEpatents

Schuller, Ivan K.; de La Venta Granda, Jose; Wang, Siming; Ramirez, Gabriel; Erekhinskiy, Mikhail; Sharoni, Amos

2016-08-16

Methods, systems, and devices are disclosed for controlling the magnetic and electrical properties of materials. In one aspect, a multi-layer structure includes a first layer comprising a ferromagnetic or ferrimagnetic material, and a second layer positioned within the multi-layer structure such that a first surface of the first layer is in direct physical contact with a second surface of the second layer. The second layer includes a material that undergoes structural phase transitions and metal-insulator transitions upon experiencing a change in temperature. One or both of the first and second layers are structured to allow a structural phase change associated with the second layer cause a change magnetic properties of the first layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usanov, D. A., E-mail: UsanovDA@info.sgu.ru; Nikitov, S. A.; Skripal, A. V.

A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.

PubMed

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-05-13

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Method for disclosing invisible physical properties in metal-ferroelectric-insulator-semiconductor gate stacks

NASA Astrophysics Data System (ADS)

Sakai, Shigeki; Zhang, Wei; Takahashi, Mitsue

2017-04-01

In metal-ferroelectric-insulator-semiconductor gate stacks of ferroelectric-gate field effect transistors (FeFETs), it is impossible to directly obtain curves of polarization versus electric field (P f-E f) in the ferroelectric layer. The P f-E f behavior is not simple, i.e. the P f-E f curves are hysteretic and nonlinear, and the hysteresis curve width depends on the electric field scan amplitude. Unless the P f-E f relation is known, the field E f strength cannot be solved when the voltage is applied between the gate meal and the semiconductor substrate, and thus P f-E f cannot be obtained after all. In this paper, the method for disclosing the relationships among the polarization peak-to-peak amplitude (2P mm_av), the electric field peak-to-peak amplitude (2E mm_av), and the memory window (E w) in units of the electric field is presented. To get P mm_av versus E mm_av, FeFETs with different ferroelectric-layer thicknesses should be prepared. Knowing such essential physical parameters is helpful and in many cases enough to quantitatively understand the behavior of FeFETs. The method is applied to three groups. The first one consists of SrBi2Ta2O9-based FeFETs. The second and third ones consist of Ca x Sr1-x Bi2Ta2O9-based FeFETs made by two kinds of annealing. The method can clearly differentiate the characters of the three groups. By applying the method, ferroelectric relationships among P mm_av, E mm_av, and E w are well classified in the three groups according to the difference of the material kinds and the annealing conditions. The method also evaluates equivalent oxide thickness (EOT) of a dual layer of a deposited high-k insulator and a thermally-grown SiO2-like interfacial layer (IL). The IL thickness calculated by the method is consistent with cross-sectional image of the FeFETs observed by a transmission electron microscope. The method successfully discloses individual characteristics of the ferroelectric and the insulator layers hidden in the gate stack of a FeFET.

Fuel cell end plate structure

DOEpatents

Guthrie, Robin J.; Katz, Murray; Schroll, Craig R.

1991-04-23

The end plates (16) of a fuel cell stack (12) are formed of a thin membrane. Pressure plates (20) exert compressive load through insulation layers (22, 26) to the membrane. Electrical contact between the end plates (16) and electrodes (50, 58) is maintained without deleterious making and breaking of electrical contacts during thermal transients. The thin end plate (16) under compressive load will not distort with a temperature difference across its thickness. Pressure plate (20) experiences a low thermal transient because it is insulated from the cell. The impact on the end plate of any slight deflection created in the pressure plate by temperature difference is minimized by the resilient pressure pad, in the form of insulation, therebetween.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Electric polarization switching in an atomically thin binary rock salt structure

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

2018-01-01

Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

NASA Astrophysics Data System (ADS)

Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

2018-02-01

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

Nanowire-based detector

DOEpatents

Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

2014-06-24

Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

Superconductor cable

DOEpatents

Allais, Arnaud [Hannover, DE; Schmidt, Frank [Langenhagen, DE

2009-12-15

A superconductor cable includes a superconductive cable core (1) and a cryostat (2) enclosing the same. The cable core (1) has a superconductive conductor (3), an insulation (4) surrounding the same and a shielding (5) surrounding the insulation (4). A layer (3b) of a dielectric or semiconducting material is applied to a central element (3a) formed from a normally conducting material as a strand or tube and a layer (3c) of at least one wire or strip of superconductive material is placed helically on top. The central element (3a) and the layer (3c) are connected to each other in an electrically conducting manner at the ends of the cable core (1).

Development and analysis of insulation constructions for aerospace wiring applications

NASA Astrophysics Data System (ADS)

Slenski, George A.; Woodford, Lynn M.

1993-03-01

The Wright Laboratory Materials Directorate at WPAFB, Ohio recently completed a research and development program under contract with the McDonnell Douglas Aerospace Company, St. Louis, Missouri. Program objectives were to develop wire insulation performance requirements, evaluate candidate insulations, and prepare preliminary specification sheets on the most promising candidates. Aircraft wiring continues to be a high maintenance item and a major contributor to electrically-related aircraft mishaps. Mishap data on aircraft show that chafing of insulation is the most common mode of wire failure. Improved wiring constructions are expected to increase aircraft performance and decrease costs by reducing maintenance actions. In the laboratory program, new insulation constructions were identified that had overall improved performance in evaluation tests when compared to currently available MIL-W-81381 and MIL-W-22759 wiring. These insulations are principally aromatic polyimide and crosslinked ethylene tetrafluoroethylene (ETFE), respectively. Candidate insulations identified in preliminary specification sheets were principally fluoropolymers with a polyimide inner layer. Examples of insulation properties evaluated included flammability, high temperature mechanical and electrical performance, fluid immersion, and susceptibility to arc propagation under applied power chafing conditions. Potential next generation wire insulation materials are also reviewed.

Atomic layer-by-layer thermoelectric conversion in topological insulator bismuth/antimony tellurides.

PubMed

Sung, Ji Ho; Heo, Hoseok; Hwang, Inchan; Lim, Myungsoo; Lee, Donghun; Kang, Kibum; Choi, Hee Cheul; Park, Jae-Hoon; Jhi, Seung-Hoon; Jo, Moon-Ho

2014-07-09

Material design for direct heat-to-electricity conversion with substantial efficiency essentially requires cooperative control of electrical and thermal transport. Bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3), displaying the highest thermoelectric power at room temperature, are also known as topological insulators (TIs) whose electronic structures are modified by electronic confinements and strong spin-orbit interaction in a-few-monolayers thickness regime, thus possibly providing another degree of freedom for electron and phonon transport at surfaces. Here, we explore novel thermoelectric conversion in the atomic monolayer steps of a-few-layer topological insulating Bi2Te3 (n-type) and Sb2Te3 (p-type). Specifically, by scanning photoinduced thermoelectric current imaging at the monolayer steps, we show that efficient thermoelectric conversion is accomplished by optothermal motion of hot electrons (Bi2Te3) and holes (Sb2Te3) through 2D subbands and topologically protected surface states in a geometrically deterministic manner. Our discovery suggests that the thermoelectric conversion can be interiorly achieved at the atomic steps of a homogeneous medium by direct exploiting of quantum nature of TIs, thus providing a new design rule for the compact thermoelectric circuitry at the ultimate size limit.

Electrical control of exchange bias via oxygen migration across CoO-ZnO nanocomposite barrier

NASA Astrophysics Data System (ADS)

Li, Q.; Yan, S. S.; Xu, J.; Li, S. D.; Zhao, G. X.; Long, Y. Z.; Shen, T. T.; Zhang, K.; Zhang, J.

2016-12-01

We proposed a nanocomposite barrier CoO-ZnO for magnetism manipulation in Co/CoO-ZnO/Ag heterojunctions. Both electrical control of magnetism and resistive switching were realized in this junction. An electrical tunable exchange bias of CoO1-v (v denotes O vacancies) on Co films was realized using voltages below 1 volt. The magnetism modulation associated with resistive switching can be attributed to the oxygen ions migration between the insulating CoO1-v layer and the semiconductive ZnO1-v layer, which can cause both ferromagnetic phase and resistance switching of CoO1-v layer.

LOW-LOSS CABLE AND METHOD OF FABRICATION

DOEpatents

McCarthy, R.L. et al.

1960-09-27

A radiation-resistant coaxial electrical cable capable of carrying very small currents at high voltages with little leakage is described. The cable comprises an inner axial conductor separated from an outer coaxial tubular conductor by annular layer of fibrous silica insulation. The silica insulation is formed by leaching boron from spun horosilicate glass and then heat treating the silica at a high temperature.

Results of thermal modeling of Smart Energy Coating with phase-transition material for independent electricity generation

NASA Astrophysics Data System (ADS)

Pospelova, I. Y.; Pospelova, M. Y.; Bondarenko, A. S.; Kornilov, D. A.

2018-05-01

The modeling for Smart Energy Coating is presented. The coating is able to produce electricity on the surface of pipelines and structural elements. Along with electric output, Smart Energy Coating ensures the stable temperature conditions of work for structures, pipelines and regulating elements. The energy production scheme is based on the Peltier principle and the insulating layer with a phase transition. Thermally conductive inclusions of the inside layer with a phase transition material ensure the stable operation of the Peltier element.

CMUT Fabrication Based On A Thick Buried Oxide Layer.

PubMed

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O; Khuri-Yakub, Butrus T

2010-10-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required - in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate.

CMUT Fabrication Based On A Thick Buried Oxide Layer

PubMed Central

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O.; Khuri-Yakub, Butrus T.

2010-01-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required – in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate. PMID:22685377

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Solar cells having integral collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Surface Charge Effects on the Electro-Orientation of Insulating Nanotubes in Aqueous Electrolytes

NASA Astrophysics Data System (ADS)

Cetindag, Semih; Tiwari, Bishnu; Zhang, Dongyan; Yap, Yoke Khin; Kim, Sangil; Shan, Jerry W.

2017-11-01

While the alignment of electrically conductive nanowires and nanotubes by electric fields in liquid solution has been well studied, much less is known about the electro-orientation of insulating 1D particles, such as boron-nitride nanotubes (BNNTs). Here, we demonstrate for the first time the electro-orientation of individual insulating BNNTs in aqueous KCl solutions under AC fields. Comparison to theory indicates that the observed frequency response is not related to the crossover for Maxwell-Wagner interfacial polarization. Instead, the cross-over frequency in the low-frequency regime scales as the square root of solution conductivity, indicating that alignment is associated with the formation and motion of an electrical double layer (EDL), much like induced-charge electro-osmosis for a conducting particle. However, the mechanism for the formation of the EDL is presumably different for insulating particles like BNNTs as compared to conductors. By varying the surface charge of the particle by changing pH, we show that the alignment rate increases with increasing surface charge, and is likely a result of counter-ion migration and EDL polarization under the influence of applied electric field. Thus, particle surface charge (large Dukhin number) is believed to play a vital role in the electro-orientation of insulating particles in aqueous solutions. NSF CBET-1604931 and NSF DMR-1261910.

High voltage capability electrical coils insulated with materials containing SF.sub.6 gas

DOEpatents

Lanoue, Thomas J.; Zeise, Clarence L.; Wagenaar, Loren; Westervelt, Dean C.

1988-01-01

A coil is made having a plurality of layers of adjacent metal conductor windings subject to voltage stress, where the windings have insulation therebetween containing a small number of minute disposed throughout its cross-section, where the voids are voids filled with SF.sub.6 gas to substitute for air or other gaseous materials in from about 60% to about 95% of the cross-sectional void volume in the insulation, thus incorporating an amount of SF.sub.6 gas in the cross-section of the insulation effective to substantially increase corona inception voltages.

Monocrystalline test structures, and use for calibrating instruments

DOEpatents

Cresswell, Michael W.; Ghoshtagore, R. N.; Linholm, Loren W.; Allen, Richard A.; Sniegowski, Jeffry J.

1997-01-01

An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Module level solutions to solar cell polarization

DOEpatents

Xavier, Grace , Li; Bo, [San Jose, CA

2012-05-29

A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backsides of the solar cells. The solar cell module includes an electrical insulator between the transparent cover and the front sides of the solar cells. An encapsulant protectively packages the solar cells. To prevent polarization, the insulator has resistance suitable to prevent charge from leaking from the front sides of the solar cells to other portions of the solar cell module by way of the transparent cover. The insulator may be attached (e.g., by coating) directly on an underside of the transparent cover or be a separate layer formed between layers of the encapsulant. The solar cells may be back junction solar cells.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

One-step fabrication of nanostructure-covered microstructures using selective aluminum anodization based on non-uniform electric field

NASA Astrophysics Data System (ADS)

Park, Yong Min; Kim, Byeong Hee; Seo, Young Ho

2016-06-01

This paper presents a selective aluminum anodization technique for the fabrication of microstructures covered by nanoscale dome structures. It is possible to fabricate bulging microstructures, utilizing the different growth rates of anodic aluminum oxide in non-uniform electric fields, because the growth rate of anodic aluminum oxide depends on the intensity of electric field, or current density. After anodizing under a non-uniform electric field, bulging microstructures covered by nanostructures were fabricated by removing the residual aluminum layer. The non-uniform electric field induced by insulative micropatterns was estimated by computational simulations and verified experimentally. Utilizing computational simulations, the intensity profile of the electric field was calculated according to the ratio of height and width of the insulative micropatterns. To compare computational simulation results and experimental results, insulative micropatterns were fabricated using SU-8 photoresist. The results verified that the shape of the bottom topology of anodic alumina was strongly dependent on the intensity profile of the applied electric field, or current density. The one-step fabrication of nanostructure-covered microstructures can be applied to various fields, such as nano-biochip and nano-optics, owing to its simplicity and cost effectiveness.

Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

NASA Astrophysics Data System (ADS)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

2018-05-01

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

PubMed

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Electrically insulating thermal nano-oils using 2D fillers.

PubMed

Taha-Tijerina, Jaime; Narayanan, Tharangattu N; Gao, Guanhui; Rohde, Matthew; Tsentalovich, Dmitri A; Pasquali, Matteo; Ajayan, Pulickel M

2012-02-28

Different nanoscale fillers have been used to create composite fluids for applications such as thermal management. The ever increasing thermal loads in applications now require advanced operational fluids, for example, high thermal conductivity dielectric oils in transformers. These oils require excellent filler dispersion, high thermal conduction, but also electrical insulation. Such thermal oils that conform to this thermal/electrical requirement, and yet remain in highly suspended stable state, have not yet been synthesized. We report here the synthesis and characterization of stable high thermal conductivity Newtonian nanofluids using exfoliated layers of hexagonal boron nitride in oil without compromising its electrically insulating property. Two-dimensional nanosheets of hexagonal boron nitride are liquid exfoliated in isopropyl alcohol and redispersed in mineral oil, used as standard transformer oil, forming stable nanosuspensions with high shelf life. A high electrical resistivity, even higher than that of the base oil, is maintained for the nano-oil containing small weight fraction of the filler (0.01 wt %), whereas the thermal conductivity was enhanced. The low dissipation factor and high pour point for this nano-oil suggests several applications in thermal management.

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

NASA Astrophysics Data System (ADS)

Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

2018-05-01

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

A charge inverter for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constantmore » of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.« less

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

2017-10-01

Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

NASA Astrophysics Data System (ADS)

Choi, Kyeong-Keun; Park, Chan-Gyung; Kim, Deok-kee

2016-01-01

The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal-insulator-metal applications at temperatures below 300 °C. ZrO2 films were able to be conformally deposited on the scallops of 50-µm-diameter, 100-µm-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8 MV/cm) upon H2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity wasmore » measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.« less

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications

NASA Astrophysics Data System (ADS)

Ding, Shi-Jin; Zhu, Chunxiang; Li, Ming-Fu; Zhang, David Wei

2005-08-01

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics have been investigated to replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator-metal capacitors applications. In the case of 1-nm-Al2O3, sufficiently good electrical performances are achieved, including a high dielectric constant of ˜17, a small dissipation factor of 0.018 at 100kHz, an extremely low leakage current of 7.8×10-9A/cm2 at 1MV/cm and 125°C, perfect voltage coefficients of capacitance (74ppm/V2 and 10ppm/V). The quadratic voltage coefficient of capacitance decreases with the applied frequency due to the change of relaxation time with different carrier mobility in insulator, and correlates with the dielectric composition and thickness, which is of intrinsic property owing to electric field polarization. Furthermore, the conduction mechanism of the AHA dielectrics is also discussed, indicating the Schottky emission dominated at room temperature.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

Diagnostic system for profiling micro-beams

DOEpatents

Elmer, John W.; Palmer, Todd A.; Teruya, Alan T.; Walton, Chris C.

2007-10-30

An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second layer of material. The third layer radial slit extends through the third layer. The fourth layer of material comprises an electrical conducting material but does not have slits. An electrical measuring device is connected to the fourth layer. The micro modified Faraday cup assembly is positioned to be swept by the micro beam.

Electrical properties of GaN-based metal-insulator-semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Freedsman, Joseph J.; Iwata, Yasuhiro; Egawa, Takashi

2014-04-01

Al2O3 deposited by atomic layer deposition (ALD) was used as an insulator in metal-insulator-semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen precursors for the ALD process, water (H2O), ozone (O3), and both H2O and O3 were used. The chemical characteristics of the ALD-Al2O3 surfaces were investigated by x-ray photoelectron spectroscopy. After fabrication of MIS-diodes and MIS-high-electron-mobility transistors (MIS-HEMTs) with the ALD-Al2O3, their electrical properties were evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The threshold voltage of the C-V curves for MIS-diodes indicated that the fixed charge in the Al2O3 layer is decreased when using both H2O and O3 as the oxygen precursors. Furthermore, MIS-HEMTs with the H2O + O3-based Al2O3 showed good dc I-V characteristics without post-deposition annealing of the ALD-Al2O3, and the drain leakage current in the off-state region was suppressed by seven orders of magnitude.

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

NASA Astrophysics Data System (ADS)

Murata, H.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.; Toko, K.

2017-12-01

The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To improve the crystal quality of MLG, we prepare AlOx or SiO2 interlayers between amorphous C and Ni layers, which control the extent of diffusion of C atoms into the Ni layer. The growth morphology and Raman spectra observed from MLG formed by layer exchange strongly depend on the material type and thickness of the interlayers; a 1-nm-thick AlOx interlayer is found to be ideal for use in experiments. Transmission electron microscopy and electron energy-loss spectra reveal that the crystal quality of the resulting MLG is much higher than that of a sample without an interlayer. The grain size reaches a few μm, leading to an electrical conductivity of 1290 S/cm. The grain size and the electrical conductivity are the highest among MLG synthesized using a solid-phase reaction including metal-induced crystallization. The direct synthesis of uniform, high-quality MLG on arbitrary substrates will pave the way for advanced electronic devices integrated with carbon materials.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Inducing electric polarization in ultrathin insulating layers

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

Studies of ultrathin polar oxide films have attracted the interest of researchers for a long time due to their different properties compared to bulk materials. However they present several challenges such as the difficulty in the stabilization of the polar surfaces and the limited success in tailoring their properties. Moreover, recently developed Van der Waals materials have shown that the stacking of 2D-layers trigger new collective states thanks to the interaction between layers. Similarly, interface phenomena emerge in polar oxides, like induced ferroelectricity. This represents a promising way for the creation of new materials with customized properties that differ from those of the isolated layers. Here we present a new approach for the fabrication and study of atomically thin insulating films. We show that the properties of insulating polar layers of sodium chloride (NaCl) can be engineered when they are placed on top of a charge modulated template of copper nitride (Cu2N). STM studies carried out in ultra-high vacuum and at low temperatures over NaCl/Cu2N/Cu(001) show that we are able to build up and stabilize interfaces of polar surface at the limit of one atomic layer showing new properties not present before at the atomic scale.

Manufacture and mechanical characterisation of high voltage insulation for superconducting busbars - (Part 1) Materials selection and development

NASA Astrophysics Data System (ADS)

Clayton, N.; Crouchen, M.; Devred, A.; Evans, D.; Gung, C.-Y.; Lathwell, I.

2017-04-01

It is planned that the high voltage electrical insulation on the ITER feeder busbars will consist of interleaved layers of epoxy resin pre-impregnated glass tapes ('pre-preg') and polyimide. In addition to its electrical insulation function, the busbar insulation must have adequate mechanical properties to sustain the loads imposed on it during ITER magnet operation. This paper reports an investigation into suitable materials to manufacture the high voltage insulation for the ITER superconducting busbars and pipework. An R&D programme was undertaken in order to identify suitable pre-preg and polyimide materials from a range of suppliers. Pre-preg materials were obtained from 3 suppliers and used with Kapton HN, to make mouldings using the desired insulation architecture. Two main processing routes for pre-pregs have been investigated, namely vacuum bag processing (out of autoclave processing) and processing using a material with a high coefficient of thermal expansion (silicone rubber), to apply the compaction pressure on the insulation. Insulation should have adequate mechanical properties to cope with the stresses induced by the operating environment and a low void content necessary in a high voltage application. The quality of the mouldings was assessed by mechanical testing at 77 K and by the measurement of the void content.

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

High thermal conductivity lossy dielectric using co-densified multilayer configuration

DOEpatents

Tiegs, Terry N.; Kiggans, Jr., James O.

2003-06-17

Systems and methods are described for loss dielectrics. A method of manufacturing a lossy dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer and then densifying together. The systems and methods provide advantages because the lossy dielectrics are less costly and more environmentally friendly than the available alternatives.

Effects of Smoke on Functional Circuits

DTIC Science & Technology

1997-10-01

functional boards consisted of four layers ; that is, there were two pieces of FR-4* insulated circuit board material that were laminated together, each with...traces on both sides (three layers of dielectric in all). The layers were electrically connected by drilling holes into the circuit board and...allowing solder to flow through the holes and form "vias." For many of the circuits, one of the middle layers served as a ground plane, while the other

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

DOEpatents

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

High gradient lens for charged particle beam

DOEpatents

Chen, Yu-Jiuan

2014-04-29

Methods and devices enable shaping of a charged particle beam. A dynamically adjustable electric lens includes a series of alternating a series of alternating layers of insulators and conductors with a hollow center. The series of alternating layers when stacked together form a high gradient insulator (HGI) tube to allow propagation of the charged particle beam through the hollow center of the HGI tube. A plurality of transmission lines are connected to a plurality of sections of the HGI tube, and one or more voltage sources are provided to supply an adjustable voltage value to each transmission line of the plurality of transmission lines. By changing the voltage values supplied to each section of the HGI tube, any desired electric field can be established across the HGI tube. This way various functionalities including focusing, defocusing, acceleration, deceleration, intensity modulation and others can be effectuated on a time varying basis.

Thermal sprayed composite melt containment tubular component and method of making same

DOEpatents

Besser, Matthew F.; Terpstra, Robert L.; Sordelet, Daniel J.; Anderson, Iver E.

2002-03-19

A tubular thermal sprayed melt containment component for transient containment of molten metal or alloy wherein the tubular member includes a thermal sprayed inner melt-contacting layer for contacting molten metal or alloy to be processed, a thermal sprayed heat-generating layer deposited on the inner layer, and an optional thermal sprayed outer thermal insulating layer. The thermal sprayed heat-generating layer is inductively heated as a susceptor of an induction field or electrical resistively heated by passing electrical current therethrough. The tubular thermal sprayed melt containment component can comprise an elongated melt pour tube of a gas atomization apparatus where the melt pour tube supplies molten material from a crucible to an underlying melt atomization nozzle.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Diamond anvil cells using boron-doped diamond electrodes covered with undoped diamond insulating layer

NASA Astrophysics Data System (ADS)

Matsumoto, Ryo; Yamashita, Aichi; Hara, Hiroshi; Irifune, Tetsuo; Adachi, Shintaro; Takeya, Hiroyuki; Takano, Yoshihiko

2018-05-01

Diamond anvil cells using boron-doped metallic diamond electrodes covered with undoped diamond insulating layers have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of a high-quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of the FeSe single crystal was increased to up to 43 K by applying uniaxial-like pressure.

The dependency of adhesion and friction on electrostatic attraction

NASA Astrophysics Data System (ADS)

Persson, B. N. J.

2018-04-01

I develop a general mean-field theory for the influence of electrostatic attraction between two solids on the contact mechanics. I assume elastic solids with random surface roughness. I consider two cases, namely, with and without an electrically insulating layer between the conducting solids. The former case is important for, e.g., the finger-touch screen interaction. I study how the electrostatic attraction influences the adhesion and friction. For the case of an insulating layer, I find that when the applied nominal contact pressure is relatively small, as the applied voltage increases, there is a sharp increase in the contact area, and hence in the friction, at a critical voltage.

Reverse slapper detonator

DOEpatents

Weingart, Richard C.

1990-01-01

A reverse slapper detonator (70), and methodology related thereto, are provided. The detonator (70) is adapted to be driven by a pulse of electric power from an external source (80). A conductor (20) is disposed along the top (14), side (18), and bottom (16) surfaces of a sheetlike insulator (12). Part of the conductor (20) comprises a bridge (28), and an aperture (30) is positioned within the conductor (20), with the bridge (28) and the aperture (30) located on opposite sides of the insulator (12). A barrel (40) and related explosive charge (50) are positioned adjacent to and in alignment with the aperture (30), and the bridge (28) is buttressed with a backing layer (60). When the electric power pulse vaporizes the bridge (28), a portion of the insulator (12) is propelled through the aperture (30) and barrel (40), and against the explosive charge (50), thereby detonating it.

Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

NASA Astrophysics Data System (ADS)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

NASA Astrophysics Data System (ADS)

Wang, Jingang; Chong, Junlong; Yang, Jie

2014-10-01

Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

Preparation and energy-saving application of polyurethane/phase change composite materials for electrical water heaters

NASA Astrophysics Data System (ADS)

Hu, Yougen; Zhao, Tao; Wu, Xiaolin; Lai, Maobai; Jiang, Chengming; Sun, Rong

2011-11-01

Thermal energy storage plays an important role in heat management because of the demand for developed energy conservation, and has applications in diverse areas, from buildings to textiles and clothings. In this study, we aimed to improve thermal characteristics of polyurethane rigid foams that have been widely used for thermal insulation in electrical water heaters. Through this work, paraffin waxes with melting point of 55~65°C act as phase change materials. Then the phase change materials were incorporated into the polyurethane foams at certain ratio. The polyurethane/phase change composite materials used as insulation layers in electrical water heaters performed the enthalpy value of 5~15 J/g. Energy efficiency of the electrical water heaters was tested according to the National Standard of China GB 21519-2008. Results show that 24 h energy consumption of the electrical water heaters manufactured by traditional polyurethane rigid foams and polyurethane/phase change material composites was 1.0612 kWh and 0.9833 kWh, respectively. The results further show that the energy-saving rate is 7.36%. These proved that polyurethane/phase change composite materials can be designed as thermal insulators equipped with electrical water heaters and have a significant effect on energy conservation.

Preparation and energy-saving application of polyurethane/phase change composite materials for electrical water heaters

NASA Astrophysics Data System (ADS)

Hu, Yougen; Zhao, Tao; Wu, Xiaolin; Lai, Maobai; Jiang, Chengming; Sun, Rong

2012-04-01

Thermal energy storage plays an important role in heat management because of the demand for developed energy conservation, and has applications in diverse areas, from buildings to textiles and clothings. In this study, we aimed to improve thermal characteristics of polyurethane rigid foams that have been widely used for thermal insulation in electrical water heaters. Through this work, paraffin waxes with melting point of 55~65°C act as phase change materials. Then the phase change materials were incorporated into the polyurethane foams at certain ratio. The polyurethane/phase change composite materials used as insulation layers in electrical water heaters performed the enthalpy value of 5~15 J/g. Energy efficiency of the electrical water heaters was tested according to the National Standard of China GB 21519-2008. Results show that 24 h energy consumption of the electrical water heaters manufactured by traditional polyurethane rigid foams and polyurethane/phase change material composites was 1.0612 kWh and 0.9833 kWh, respectively. The results further show that the energy-saving rate is 7.36%. These proved that polyurethane/phase change composite materials can be designed as thermal insulators equipped with electrical water heaters and have a significant effect on energy conservation.

Structure and magnetic properties of FeSiAl-based soft magnetic composite with AlN and Al2O3 insulating layer prepared by selective nitridation and oxidation

NASA Astrophysics Data System (ADS)

Zhong, Xiaoxi; Liu, Ying; Li, Jun; Wang, Yiwei

2012-08-01

FeSiAl is widely used in switching power supply, filter inductors and pulse transformers. But when used under higher frequencies in some particular condition, it is required to reduce its high-frequency loss. Preparing a homogeneous insulating coating with good heat resistance and high resistivity, such as AlN and Al2O3, is supposed to be an effective way to reduce eddy current loss, which is less focused on. In this project, mixed AlN and Al2O3 insulating layers were prepared on the surface of FeSiAl powders after 30 min exposure at 1100 °C in high purity nitrogen atmosphere, by means of surface nitridation and oxidation. The results revealed that the insulating layers increase the electrical resistivity, and hence decrease the loss factor, improve the frequency stability and increase the quality factor, especially in the high-frequency range. The morphologies, microstructure and compositions of the oxidized and nitrided products on the surface were characterized by Scanning Electron Microscopy/Energy Disperse Spectroscopy, X-Ray Diffraction, Transmission Electron Microscopy, Selected Area Electron Diffraction and X-ray Photoelectron Spectroscopy.

Transport in ultrathin gold films decorated with magnetic Gd atoms

NASA Astrophysics Data System (ADS)

Alemani, Micol; Helgren, Erik; Hugel, Addison; Hellman, Frances

2008-03-01

We have performed four-probe transport measurements of ultrathin Au films decorated with Gd ad-atoms. The samples were prepared by quench condensation, i.e., sequential evaporation on a cryogenically cooled substrate under UHV conditions while monitoring the film thickness and resistance. Electrically continuous Au films at thickness of about 2 mono-layers of material are grown on an amorphous Ge wetting layer. The quench condensation method provides a sensitive control on the sample growth process, allowing us to tune the morphological and electrical configuration of the system. The ultrathin gold films develop from an insulating to a metallic state as a function of film thickness. The temperature dependence of the Au conductivity for different thickness is studied. It evolves from hopping transport for the insulating films, to a ln T dependence for thicker films. For gold films in the insulating regime we found a decreasing resistance by adding Gd. This is in agreement with a decreasing tunneling barrier height between metallic atoms. The Gd magnetic moments are randomly oriented for isolated atoms. This magnetic disorder leads to scattering of the charge carriers and a reduced conductivity compared to nonmagnetic materials.

Modeling and Characterization of Capacitive Elements With Tissue as Dielectric Material for Wireless Powering of Neural Implants.

PubMed

Erfani, Reza; Marefat, Fatemeh; Sodagar, Amir M; Mohseni, Pedram

2018-05-01

This paper reports on the modeling and characterization of capacitive elements with tissue as the dielectric material, representing the core building block of a capacitive link for wireless power transfer to neural implants. Each capacitive element consists of two parallel plates that are aligned around the tissue layer and incorporate a grounded, guarded, capacitive pad to mitigate the adverse effect of stray capacitances and shield the plates from external interfering electric fields. The plates are also coated with a biocompatible, insulating, coating layer on the inner side of each plate in contact with the tissue. A comprehensive circuit model is presented that accounts for the effect of the coating layers and is validated by measurements of the equivalent capacitance as well as impedance magnitude/phase of the parallel plates over a wide frequency range of 1 kHz-10 MHz. Using insulating coating layers of Parylene-C at a thickness of and Parylene-N at a thickness of deposited on two sets of parallel plates with different sizes and shapes of the guarded pad, our modeling and characterization results accurately capture the effect of the thickness and electrical properties of the coating layers on the behavior of the capacitive elements over frequency and with different tissues.

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment.

PubMed

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-12-16

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor.

Fully Solution-Processable Fabrication of Multi-Layered Circuits on a Flexible Substrate Using Laser Processing

PubMed Central

Ji, Seok Young; Choi, Wonsuk; Jeon, Jin-Woo; Chang, Won Seok

2018-01-01

The development of printing technologies has enabled the realization of electric circuit fabrication on a flexible substrate. However, the current technique remains restricted to single-layer patterning. In this paper, we demonstrate a fully solution-processable patterning approach for multi-layer circuits using a combined method of laser sintering and ablation. Selective laser sintering of silver (Ag) nanoparticle-based ink is applied to make conductive patterns on a heat-sensitive substrate and insulating layer. The laser beam path and irradiation fluence are controlled to create circuit patterns for flexible electronics. Microvia drilling using femtosecond laser through the polyvinylphenol-film insulating layer by laser ablation, as well as sequential coating of Ag ink and laser sintering, achieves an interlayer interconnection between multi-layer circuits. The dimension of microvia is determined by a sophisticated adjustment of the laser focal position and intensity. Based on these methods, a flexible electronic circuit with chip-size-package light-emitting diodes was successfully fabricated and demonstrated to have functional operations. PMID:29425144

Use of laser drilling in the manufacture of organic inverter circuits.

PubMed

Iba, Shingo; Kato, Yusaku; Sekitani, Tsuyoshi; Kawaguchi, Hiroshi; Sakurai, Takayasu; Someya, Takao

2006-01-01

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO2 laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO2 laser drilling machine, contact resistance can be reduced to as low as 3 ohms for 180 microm square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-15

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the materialmore » in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.« less

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

NASA Astrophysics Data System (ADS)

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-01

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films.

PubMed

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-01

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE PAGES

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; ...

2018-05-07

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Effect of thickness of insulation coating on temperature of electrically exploded tungsten wires in vacuum

NASA Astrophysics Data System (ADS)

Shi, Huantong; Zou, Xiaobing; Wang, Xinxin

2017-07-01

This paper reports an interesting observation of great differences in the temperature of exploded wires with insulation coating of different thicknesses. Two kinds of polyimide-coated tungsten wires were used with the same conductive diameter 12.5 μm but a different thickness of coating, 0.75-2.25 μm and 2.25-4.25 μm, respectively. The specific energy reconstructed from the current and voltage signals was quite close for the tested wires. However, the exploding scenario, obtained from Mach-Zehnder interferograms, showed great differences: a neutral outer-layer was observed around the thick-coated wire, which was absent for the thin-coated wire; and the calculated electron density and local thermal equilibrium temperature were much higher for thick-coated wires. The heat-preserving neutral layer formed by the decomposition of the insulation was supposed to be the cause of this phenomenon.

Determination of the dew point and the frost point below 0 degrees C making use of the beta-ray backscattering and the electric conductivity on the narrow surface of insulated layer.

PubMed

Matsumoto, S; Kobayashi, H

1979-10-15

It is necessary to distinguish between the dew point and the frost point below 0 degrees C. The freezing of the dew and the melting of the frost are respectively detected by the rapid decrease and the increase of the conduction current on the narrow surface of insulated layer made of epoxy, 0.5 mm in width and 10 mm in length, on which the dew deposits. The dew point -9 degrees C and the frost point -8 degrees C in the humidity 21% at the temperature 13 degrees C are clearly distinguished in this method.

X-ray Study of the Electric Double Layer at the n-Hexane/Nanocolloidal Silica Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhonov,A.

The spatial structure of the transition region between an insulator and an electrolyte solution was studied with x-ray scattering. The electron-density profile across the n-hexane/silica sol interface (solutions with 5, 7, and 12 nm colloidal particles) agrees with the theory of the electrical double layer and shows separation of positive and negative charges. The interface consists of three layers, i.e., a compact layer of Na{sup +}, a loose monolayer of nanocolloidal particles as part of a thick diffuse layer, and a low-density layer sandwiched between them. Its structure is described by a model in which the potential gradient at themore » interface reflects the difference in the potentials of 'image forces' between the cationic Na{sup +} and anionic nanoparticles and the specific adsorption of surface charge. The density of water in the large electric field ({approx}10{sup 9}-10{sup 10} V/m) of the transition region and the layering of silica in the diffuse layer is discussed.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to bemore » promising for integrated chemical micro- and nanosensors.« less

Structure of the screening layer near a plane isolated body in the deep vacuum. Part 2. Monoenergetic isotropic flow

NASA Astrophysics Data System (ADS)

Gunko, Yuri F.; Gunko, Natalia A.

2018-05-01

In this paper we consider the problem of determining the structure of the electric field near the surface of a flat insulated body under conditions of a deep vacuum. It is assumed that the emitted particles are electrons leaving the body surface under the influence of ionizing radiation whose velocities distribution near the surface is isotropic. It is estimated the thickness of the screening layer under conditions of stationary emission from a flat surface. The solutio of the problem of determining a stationary self-consistent electric field near the surface is found in a simple analytical form. The thickness of the screening layer is calculated from this formula.

Tilted Orientation of Photochromic Dyes with Guest-Host Effect of Liquid Crystalline Polymer Matrix for Electrical UV Sensing

PubMed Central

Ranjkesh, Amid; Park, Min-Kyu; Park, Do Hyuk; Park, Ji-Sub; Choi, Jun-Chan; Kim, Sung-Hoon; Kim, Hak-Rin

2015-01-01

We propose a highly oriented photochromic dye film for an ultraviolet (UV)-sensing layer, where spirooxazine (SO) derivatives are aligned with the liquid crystalline UV-curable reactive mesogens (RM) using a guest-host effect. For effective electrical UV sensing with a simple metal-insulator-metal structure, our results show that the UV-induced switchable dipole moment amount of the SO derivatives is high; however, their tilting orientation should be controlled. Compared to the dielectric layer with the nearly planar SO dye orientation, the photochromic dielectric layer with the moderately tilted dye orientation shows more than seven times higher the UV-induced capacitance variation. PMID:26729116

Conductor for a fluid-cooled winding

DOEpatents

Kenney, Walter J.

1983-01-01

A conductor and method of making the conductor are provided for use in winding electrical coils which are cooled by a fluid communicating with the conductor. The conductor is cold worked through twisting and reshaping steps to form a generally rectangular cross section conductor having a plurality of helical cooling grooves extending axially of the conductor. The conductor configuration makes it suitable for a wide variety of winding applications and permits the use of simple strip insulation between turns and perforated sheet insulation between layers of the winding.

Cable for prospecting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebouc, L.; Marmignon, J.

1983-03-29

A cable for prospecting, said cable including a core of conductor wires surrounded by insulating material and by armour formed by at least one layer of helically wound steel wires. It includes, from its center to its periphery, inside the armour, an axial monofilament made of a polymer that withstands high temperatures, said monofilament forming the insulation of an inner conductor, an outer conductor and a sheath made of a thermoplastic substance that withstands high temperatures, said inner conductor serving a different electrical function than said core of conductor wires.

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

Size effect in Quincke rotation: a numerical study.

PubMed

Peters, F; Lobry, L; Khayari, A; Lemaire, E

2009-05-21

This paper deals with the Quincke rotation of small insulating particles. This dc electrorotation of insulating objects immersed in a slightly conducting liquid is usually explained by looking at the action of the free charges present in the liquid. Under the effect of the dc electric field, the charges accumulate at the surface of the insulating particle which, in turn, acquires a dipole moment in the direction opposite to that of the field and begins to rotate in order to flip its dipole moment. In the classical Quincke model, the charge distribution around the rotor is supposed to be purely superficial. A consequence of this assumption is that the angular velocity does not depend on the rotor size. Nevertheless, this hypothesis holds only if the rotor size is much larger than the characteristic ion layer thickness around the particle. In the opposite case, we show thanks to numerical calculations that the bulk charge distribution has to be accounted for to predict the electromechanical behavior of the rotor. We consider the case of an infinite insulating cylinder whose axis is perpendicular to the dc electric field. We use the finite element method to solve the conservation equations for the positive and the negative ions coupled with Navier-Stokes and Poisson equations. Doing so, we compute the bulk charge distribution and the velocity field in the liquid surrounding the cylinder. For sufficiently small cylinders, we show that the smaller the cylinder is, the smaller its angular velocity is when submitted to a dc electric field. This size effect is shown to originate both in ion diffusion and electromigration in the charge layer. At last, we propose a simple analytical model which allows calculating the angular velocity of the rotor when electromigration is present but weak and diffusion can be neglected.

Size effect in Quincke rotation: A numerical study

NASA Astrophysics Data System (ADS)

Peters, F.; Lobry, L.; Khayari, A.; Lemaire, E.

2009-05-01

This paper deals with the Quincke rotation of small insulating particles. This dc electrorotation of insulating objects immersed in a slightly conducting liquid is usually explained by looking at the action of the free charges present in the liquid. Under the effect of the dc electric field, the charges accumulate at the surface of the insulating particle which, in turn, acquires a dipole moment in the direction opposite to that of the field and begins to rotate in order to flip its dipole moment. In the classical Quincke model, the charge distribution around the rotor is supposed to be purely superficial. A consequence of this assumption is that the angular velocity does not depend on the rotor size. Nevertheless, this hypothesis holds only if the rotor size is much larger than the characteristic ion layer thickness around the particle. In the opposite case, we show thanks to numerical calculations that the bulk charge distribution has to be accounted for to predict the electromechanical behavior of the rotor. We consider the case of an infinite insulating cylinder whose axis is perpendicular to the dc electric field. We use the finite element method to solve the conservation equations for the positive and the negative ions coupled with Navier-Stokes and Poisson equations. Doing so, we compute the bulk charge distribution and the velocity field in the liquid surrounding the cylinder. For sufficiently small cylinders, we show that the smaller the cylinder is, the smaller its angular velocity is when submitted to a dc electric field. This size effect is shown to originate both in ion diffusion and electromigration in the charge layer. At last, we propose a simple analytical model which allows calculating the angular velocity of the rotor when electromigration is present but weak and diffusion can be neglected.

Variable-Resistivity Material For Memory Circuits

NASA Technical Reports Server (NTRS)

Nagasubramanian, Ganesan; Distefano, Salvador; Moacanin, Jovan

1989-01-01

Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

Electric-field-induced forces between two surfaces filled with an insulating liquid: the role of adsorbed water

NASA Astrophysics Data System (ADS)

Wang, Yong Jian; Xu, Zuli; Sheng, Ping; Tong, Penger

2014-06-01

A systematic study of the electric-field-induced forces between a solid glass sphere and a flat gold-plated substrate filled with an insulating liquid has been carried out. Using atomic force microscopy, we measure the electrostatic force f(s, V) between the sphere and substrate as a function of the surface separation s and applied voltage V. The measured f(s, V) is found to be well described by an equation for a conducting sphere. Further force measurements for the "wet" porous glass spheres filled with an aqueous solution of urea and the dried porous glass spheres filled with (dry) air suggest that there is a water layer of a few nanometers in thickness adsorbed on the hydrophilic glass surface under ambient conditions. This adsorbed water layer is more conductive than the dielectric core of the glass sphere, making the sphere surface to be at a potential close to that of the cantilever electrode. As a result, the electric field is strongly concentrated in the gap region between the glass sphere and gold-plate substrate and thus their electrostatic attraction is enhanced. This surface conductivity effect is further supported by the thermal gravimetric analysis (TGA) and force response measurements to a time-dependent electric field. The experiment clearly demonstrates that the adsorption of a conductive water layer on a hydrophilic surface plays a dominant role in determining the electrostatic interaction between the dielectric sphere and substrate.

Electric control of superconducting transition through a spin-orbit coupled interface

PubMed Central

Ouassou, Jabir Ali; Di Bernardo, Angelo; Robinson, Jason W. A.; Linder, Jacob

2016-01-01

We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit coupling. By using analytical calculations and numerical simulations, we show that the transition temperature of such a device can be controlled by electric gating which alters the ratio of Rashba to Dresselhaus spin-orbit coupling. The results offer a new pathway to control superconductivity in spintronic devices. PMID:27426887

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutzer, B.; Simsek, S.; Zimmermann, C.

In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO{sub 2} insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V{sup 2} is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm{sup 2} and a leakage current of less than 1.2 × 10{sup −8} A/cm{sup 2} at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing themore » formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.« less

Heat reflecting tape for thermoelectric converter

DOEpatents

Purdy, David L.

1977-01-01

Threads are interlaced with thermoelectric wires to provide a woven cloth in tape form, there being an intermediate layer of heat radiation reflecting material (e.g., aluminum foil) insulated electrically from said wires, which are of opposite thermoelectric polarity and connected as a plurality of thermocouples.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

Preparation and properties of the multi-layer aerogel thermal insulation composites

NASA Astrophysics Data System (ADS)

Wang, Miao; Feng, Junzong; Jiang, Yonggang; Zhang, Zhongming; Feng, Jian

2018-03-01

Multi-layer insulation materials possess low radiation thermal conductivity, and excellent thermal insulation property in a vacuum environment. However, the spacers of the traditional multi-layer insulation materials are mostly loose fibers, which lead to more sensitive to the vacuum environmental of serviced. With the vacuum degree declining, gas phases thermal convection increase obviously, and the reflective screen will be severe oxidation, all of these make the thermal insulation property of traditional multi-layer insulation deteriorate, thus limits its application scope. In this paper, traditional multi-layer insulation material is combined with aerogel and obtain a new multi-layer aerogel thermal insulation composite, and the effects of the number, thickness and type of the reflective screens on the thermal insulation properties of the multi-layer composites are also studied. The result is that the thermal insulation property of the new type multi-layer aerogel composites is better than the pure aerogel composites and the traditional multi-layer insulation composites. When the 0.01 mm stainless steel foil as the reflective screen, and the aluminum silicate fiber and silica aerogel as the spacer layer, the layer density of composite with the best thermal insulation property is one layer per millimeter at 1000 °C.

Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

NASA Astrophysics Data System (ADS)

Jong-Woong Kim,; Young-Seok Kim,; Sung-Jei Hong,; Tae-Hwan Hong,; Jeong-In Han,

2010-05-01

SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

Superconductive microstrip exhibiting negative differential resistivity

DOEpatents

Huebener, R.P.; Gallus, D.E.

1975-10-28

A device capable of exhibiting negative differential electrical resistivity over a range of values of current and voltage is formed by vapor- depositing a thin layer of a material capable of exhibiting superconductivity on an insulating substrate, establishing electrical connections at opposite ends of the deposited strip, and cooling the alloy into its superconducting range. The device will exhibit negative differential resistivity when biased in the current- induced resistive state.

Electrochromic optical switching device

DOEpatents

Lampert, C.M.; Visco, S.J.

1992-08-25

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Electrochromic optical switching device

DOEpatents

Lampert, Carl M.; Visco, Steven J.

1992-01-01

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Durganandini, P.

2015-03-01

We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

A modified low-temperature wafer bonding method using spot pressing bonding technique and water glass adhesive layer

NASA Astrophysics Data System (ADS)

Xu, Yang; Wang, Shengkai; Wang, Yinghui; Chen, Dapeng

2018-02-01

A modified low-temperature wafer bonding method using a spot pressing bonding technique and a water glass adhesive layer is proposed. The electrical properties of the water glass layer has been studied by capacitance-voltage (C-V) and electric current-voltage (I-V) measurements. It is found that the adhesive layer can be regarded as a good insulator in terms of leakage current density. The bonding mechanism and the motion of bubbles during the thermal treatment are investigated. The dominant factor for the bubble motion in the modified bonding process is the gradient of pressure introduced by the spot pressing force. It is proved that the modified method achieves low-temperature adhesive bonding, minimizes the effect of water desorption, and provides good bonding performance.

Gate-tunable gigantic changes in lattice parameters and optical properties in VO2

NASA Astrophysics Data System (ADS)

Nakano, Masaki; Okuyama, Daisuke; Shibuya, Keisuke; Ogawa, Naoki; Hatano, Takafumi; Kawasaki, Masashi; Arima, Taka-Hisa; Iwasa, Yoshihiro; Tokura, Yoshinori

2014-03-01

The field-effect transistor provides an electrical switching function of current flowing through a channel surface by external gate voltage (VG). We recently reported that an electric-double-layer transistor (EDLT) based on vanadium dioxide (VO2) enables electrical switching of the metal-insulator phase transition, where the low-temperature insulating state can be completely switched to the metallic state by application of VG. Here we demonstrate that VO2-EDLT enables electrical switching of lattice parameters and optical properties as well as electrical current. We performed in-situ x-ray diffraction and optical transmission spectroscopy measurements, and found that the c-axis length and the infrared transmittance of VO2 can be significantly modulated by more than 1% and 40%, respectively, by application of VG. We emphasize that these distinguished features originate from the electric-field induced bulk phase transition available with VO2-EDLT. This work was supported by the Japan Society for the Promotion of Science (JSPS) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Kinetic simulations of gas breakdown in the dense plasma focus

NASA Astrophysics Data System (ADS)

Bennett, N.; Blasco, M.; Breeding, K.; DiPuccio, V.; Gall, B.; Garcia, M.; Gardner, S.; Gatling, J.; Hagen, E. C.; Luttman, A.; Meehan, B. T.; Molnar, S.; O'Brien, R.; Ormond, E.; Robbins, L.; Savage, M.; Sipe, N.; Welch, D. R.

2017-06-01

The first fully kinetic, collisional, and electromagnetic simulations of the breakdown phase of a MA-scale dense plasma focus are described and shown to agree with measured electrical characteristics, including breakdown time. In the model, avalanche ionization is driven by cathode electron emission, and this results in incomplete gas breakdown along the insulator. This reinforces the importance of the conditioning process that creates a metallic layer on the insulator surface. The simulations, nonetheless, help explain the relationship between the gas pressure, the insulator length, and the coaxial gap width. Previously, researchers noted three breakdown patterns related to pressure. Simulation and analytical results show that at low pressures, long ionization path lengths lead to volumetric breakdown, while high pressures lead to breakdown across the relatively small coaxial electrode gap. In an intermediate pressure regime, ionization path lengths are comparable to the insulator length which promotes ideal breakdown along the insulator surface.

Characterizing the structure of topological insulator thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue

2015-08-01

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb){sub 2}Te{sub 3} and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO{sub 3} and the use of capping layers to protect topological insulator films frommore » oxidation and exposure.« less

Study of surface atmospheric pressure glow discharge plasma based on ultrathin laminated electrodes in air

NASA Astrophysics Data System (ADS)

Zhao, Luxiang; Liu, Wenzheng; Li, Zhiyi; Ma, Chuanlong

2018-05-01

A method to generate large-area surface plasma in air by micro-discharge is proposed. Two ultrathin laminated electrode structures of non-insulating and insulating types were formed by using the nanoscale ITO conductive layer. The surface glow discharge in atmospheric air is realized in low discharge voltage by constructing the special electric field of two-dimensional unidirectional attenuation. In particular, the insulating electrode structure can avoid the loss of ITO electrodes so that the discharge stability can be increased, and the treated objects can be prevented from metal ion pollution caused by the electrode in the discharge. It has broad application prospects in the fields of aerodynamics and material surface treatment.

Mechanically Stretchable and Electrically Insulating Thermal Elastomer Composite by Liquid Alloy Droplet Embedment

PubMed Central

Jeong, Seung Hee; Chen, Si; Huo, Jinxing; Gamstedt, Erik Kristofer; Liu, Johan; Zhang, Shi-Li; Zhang, Zhi-Bin; Hjort, Klas; Wu, Zhigang

2015-01-01

Stretchable electronics and soft robotics have shown unsurpassed features, inheriting remarkable functions from stretchable and soft materials. Electrically conductive and mechanically stretchable materials based on composites have been widely studied for stretchable electronics as electrical conductors using various combinations of materials. However, thermally tunable and stretchable materials, which have high potential in soft and stretchable thermal devices as interface or packaging materials, have not been sufficiently studied. Here, a mechanically stretchable and electrically insulating thermal elastomer composite is demonstrated, which can be easily processed for device fabrication. A liquid alloy is embedded as liquid droplet fillers in an elastomer matrix to achieve softness and stretchability. This new elastomer composite is expected useful to enhance thermal response or efficiency of soft and stretchable thermal devices or systems. The thermal elastomer composites demonstrate advantages such as thermal interface and packaging layers with thermal shrink films in transient and steady-state cases and a stretchable temperature sensor. PMID:26671673

Electrooptical properties and structural features of amorphous ITO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amosova, L. P., E-mail: l-amosova@mail.ru

2015-03-15

Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms.more » At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.« less

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

PubMed Central

Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

2016-01-01

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

The Use of Ferroelectric Ceramics to Charge Small Capacitor Banks

DTIC Science & Technology

2017-09-01

solder (Sn42/Bi57.6/Ag0.4) with a 138 °C melting point.11 The solder paste was applied to the electrodes on the FEG and the circuit board and heated ...were investigated using epoxy to adhere parts together with a 0.8-mm-thick G-10 fiberglass insulating layer. The sandwich was command detonated using...utilized a 0.8-mm-thick G-10 insulator to electrically isolate the sandwich and/or coupler from the FEG. Table 1 is a summary of all experimental data

Mesoscopic Free Path of Nonthermalized Photogenerated Carriers in a Ferroelectric Insulator.

PubMed

Gu, Zongquan; Imbrenda, Dominic; Bennett-Jackson, Andrew L; Falmbigl, Matthias; Podpirka, Adrian; Parker, Thomas C; Shreiber, Daniel; Ivill, Mathew P; Fridkin, Vladimir M; Spanier, Jonathan E

2017-03-03

We show how finite-size scaling of a bulk photovoltaic effect-generated electric field in epitaxial ferroelectric insulating BaTiO_{3}(001) films and a photo-Hall response involving the bulk photovoltaic current reveal a large room-temperature mean free path of photogenerated nonthermalized electrons. Experimental determination of mesoscopic ballistic optically generated carrier transport opens a new paradigm for hot electron-based solar energy conversion, and for facile control of ballistic transport distinct from existing low-dimensional semiconductor interfaces, surfaces, layers, or other structures.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

NASA Astrophysics Data System (ADS)

Nozaki, Mikito; Watanabe, Kenta; Yamada, Takahiro; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Alumina incorporating nitrogen (aluminum oxynitride; AlON) for immunity against charge injection was grown on a AlGaN/GaN substrate through the repeated atomic layer deposition (ALD) of AlN layers and in situ oxidation in ozone (O3) ambient under optimized conditions. The nitrogen distribution was uniform in the depth direction, the composition was controllable over a wide range (0.5–32%), and the thickness could be precisely controlled. Physical analysis based on synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) revealed that harmful intermixing at the insulator/AlGaN interface causing Ga out-diffusion in the gate stack was effectively suppressed by this method. AlON/AlGaN/GaN MOS capacitors were fabricated, and they had excellent electrical properties and immunity against electrical stressing as a result of the improved interface stability.

An oppositely charged insect exclusion screen with gap-free multiple electric fields

NASA Astrophysics Data System (ADS)

Matsuda, Yoshinori; Kakutani, Koji; Nonomura, Teruo; Kimbara, Junji; Kusakari, Shin-ichi; Osamura, Kazumi; Toyoda, Hideyoshi

2012-12-01

An electric field screen was constructed to examine insect attraction mechanisms in multiple electric fields generated inside the screen. The screen consisted of two parallel insulated conductor wires (ICWs) charged with equal but opposite voltages and two separate grounded nets connected to each other and placed on each side of the ICW layer. Insects released inside the fields were charged either positively or negatively as a result of electricity flow from or to the insect, respectively. The force generated between the charged insects and opposite ICW charges was sufficient to capture all insects.

Core-protective half-metallicity in trilayer graphene nanoribbons

NASA Astrophysics Data System (ADS)

Jeon, Gi Wan; Lee, Kyu Won; Lee, Cheol Eui

2017-07-01

Half-metals, playing an important role in spintronics, can be described as materials that enable fully spin-polarized electrical current. Taking place in graphene-based materials, half-metallicity has been shown in zigzag-edged graphene nanoribbons (ZGNRs) under an electric field. Localized electron states on the edge carbons are a key to enabling half-metallicity in ZGNRs. Thus, modification of the localized electron states is instrumental to the carbon-based spintronics. Our simple model shows that in a trilayer ZGNRs (triZGNRs) only the middle layer may become half-metallic leaving the outer layers insulating in an electric field, as confirmed by our density functional theory (DFT) calculations. Due to the different circumstances of the edge carbons, the electron energies at the edge carbons are different near the Fermi level, leading to a layer-selective half-metallicity. We believe that triZGNRs can be the tiniest electric cable (nanocable) form and can open a route to graphene-based spintronics applications.

Enhanced optical-to-THz conversion efficiency of photoconductive antenna using dielectric nano-layer encapsulation

NASA Astrophysics Data System (ADS)

Gupta, Abhishek; Rana, Goutam; Bhattacharya, Arkabrata; Singh, Abhishek; Jain, Ravikumar; Bapat, Rudheer D.; Duttagupta, S. P.; Prabhu, S. S.

2018-05-01

Photoconductive antennas (PCAs) are among the most conventional devices used for emission as well as detection of terahertz (THz) radiation. However, due to their low optical-to-THz conversion efficiencies, applications of these devices in out-of-laboratory conditions are limited. In this paper, we report several factors of enhancement in THz emission efficiency from conventional PCAs by coating a nano-layer of dielectric (TiO2) on the active area between the electrodes of a semi-insulating GaAs-based device. Extensive experiments were done to show the effect of thicknesses of the TiO2 layer on the THz power enhancement with different applied optical power and bias voltages. Multiphysics simulations were performed to elucidate the underlying physics behind the enhancement of efficiency of the PCA. Additionally, this layer increases the robustness of the electrode gaps of the PCAs with high electrical insulation as well as protect it from external dust particles.

Radiation Test Results for a MEMS Microshutter Operating at 60 K

NASA Technical Reports Server (NTRS)

Rapchun, David A.; Buchner, Stephen; Moseley, Harvey; Meyer, Stephen E.; Ray, Knute; Tuttle, Jim; Quinn, Ed; Buchanan, Ernie; Bloom, Dave; Hait, Tom;

The Influence of Mechanical Parameters on Dielectric Characteristics of Rigid Electrical Insulating Materials

NASA Astrophysics Data System (ADS)

Buică, G.; Antonov, A. E.; Beiu, C.; Dobra, R.; Risteiu, M.

2018-06-01

Rigid electrical insulating materials are used in the manufacture of work equipment with electric safety function, being mainly intended for use in the energy sector. The paper presents the results of the research on the identification of the technical and safety requirements for rigid electrical insulating materials that are part of the electrical insulating work equipment. The paper aims to show the behaviour of rigid electrical insulating materials under the influence of mechanical risk factors, in order to check the functionality and to ensure the safety function for the entire life time. There were tested rigid electrical insulating equipment designed to be used as safety means in electrical power stations and overhead power lines.

A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

2016-05-01

Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

Thin films of topological Kondo insulator candidate SmB6: Strong spin-orbit torque without exclusive surface conduction

PubMed Central

Li, Yufan; Ma, Qinli; Huang, S. X.; Chien, C. L.

2018-01-01

The advent of topological insulators (TIs), a novel class of materials that harbor a metallic spin-chiral surface state coexisting with band-insulating bulk, opens up new possibilities for spintronics. One promising route is current-induced switching of an adjacent magnetic layer via spin-orbit torque (SOT), arising from the large spin-orbit coupling intrinsically possessed by TIs. The Kondo insulator SmB6 has been recently proposed to be a strongly correlated TI, supported by the observation of a metallic surface state in bulk SmB6, as evidenced by the thickness independence of the low-temperature resistance plateau. We report the synthesis of epitaxial (001) SmB6/Si thin films and a systematic thickness-dependent electrical transport study. Although the low-temperature resistance plateau is observed for all films from 50 to 500 nm in thickness, the resistance is distinctively thickness-dependent and does not support the notion of surface conduction and interior insulation. On the other hand, we demonstrate that SmB6 can generate a large SOT to switch an adjacent ferromagnetic layer, even at room temperature. The effective SOT generated from SmB6 is comparable to that from β-W, one of the strongest SOT materials. PMID:29376125

Improved Thermal-Insulation Systems for Low Temperatures

NASA Technical Reports Server (NTRS)

Fesmire, James E.; Augustynowicz, Stanislaw D.

2003-01-01

Improved thermal-insulation materials and structures and the techniques for manufacturing them are undergoing development for use in low-temperature applications. Examples of low-temperature equipment for which these thermal insulation systems could provide improved energy efficiency include storage tanks for cryogens, superconducting electric-power-transmission equipment, containers for transport of food and other perishable commodities, and cold boxes for low-temperature industrial processes. These systems could also be used to insulate piping used to transfer cryogens and other fluids, such as liquefied natural gas, refrigerants, chilled water, crude oil, or low-pressure steam. The present thermal-insulation systems are layer composites based partly on the older class of thermal-insulation systems denoted generally as multilayer insulation (MLI). A typical MLI structure includes an evacuated jacket, within which many layers of radiation shields are stacked or wrapped close together. Low-thermal-conductivity spacers are typically placed between the reflection layers to keep them from touching. MLI can work very well when a high vacuum level (less than 10(exp-4) torr) is maintained and utmost care is taken during installation, but its thermal performance deteriorates sharply as the pressure in the evacuated space rises into the soft vacuum range [pressures greater than 0.1 torr (greater than 13 Pa)]. In addition, the thermal performance of MLI is extremely sensitive to mechanical compression and edge effects and can easily decrease from one to two orders of magnitude from its ideal value even when the MLI is kept under high vacuum condition. The present thermal-insulation systems are designed to perform well under soft vacuum level, in particular the range of 1 to 10 torr. They are also designed with larger interlayer spacings to reduce vulnerability to compression (and consequent heat leak) caused by installation and use. The superiority of these systems is the synergistic effect of improvements in materials, design, and manufacture.

A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block

PubMed Central

2009-01-01

This paper describes an experimental study on field emission characteristics of individual graphene layers for vacuum nanoelectronics. Graphene layers were prepared by mechanical exfoliation from a highly oriented pyrolyzed graphite block and placed on an insulating substrate, with the resulting field emission behavior investigated using a nanomanipulator operating inside a scanning electron microscope. A pair of tungsten tips controlled by the nanomanipulator enabled electric connection with the graphene layers without postfabrication. The maximum emitted current from the graphene layers was 170 nA and the turn-on voltage was 12.1 V. PMID:20596315

Terminal structure

DOEpatents

Schmidt, Frank [Langenhagen, DE; Allais, Arnaud [Hannover, DE; Mirebeau, Pierre [Villebon sur Yvette, FR; Ganhungu, Francois [Vieux-Reng, FR; Lallouet, Nicolas [Saint Martin Boulogne, FR

2009-10-20

A terminal structure (2) for a superconducting cable (1) is described. It consists of a conductor (2a) and an insulator (2b) that surrounds the conductor (2a), wherein the superconducting cable (1) has a core with a superconducting conductor (5) and a layer of insulation that surrounds the conductor (5), and wherein the core is arranged in such a way that it can move longitudinally in a cryostat. The conductor (2a) of the terminal structure (2) is electrically connected with the superconducting conductor (5) or with a normal conductor (6) that is connected with the superconducting conductor (5) by means of a tubular part (7) made of an electrically conductive material, wherein the superconducting conductor (5) or the normal conductor (6) can slide in the part (7) in the direction of the superconductor.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Capacitive micromachined ultrasonic transducers (CMUTs) with isolation posts.

PubMed

Huang, Yongli; Zhuang, Xuefeng; Haeggstrom, Edward O; Ergun, A Sanli; Cheng, Ching-Hsiang; Khuri-Yakub, Butrus T

2008-03-01

In this paper, an improved design of a capacitive micromachined ultrasonic transducer (CMUT) is presented. The design improvement aims to address the reliability issues of a CMUT and to extend the device operation beyond the contact (collapse) voltage. The major design novelty is the isolation posts in the vacuum cavities of the CMUT cells instead of full-coverage insulation layers in conventional CMUTs. This eliminates the contact voltage drifting due to charging caused by the insulation layer, and enables repeatable CMUT operation in the post-contact regime. Ultrasonic tests of the CMUTs with isolation posts (PostCMUTs) in air (electrical input impedance and capacitance vs. bias voltage) and immersion (transmission and reception) indicate acoustic performance similar to that obtained from conventional CMUTs while no undesired side effects of this new design is observed.

Electrical Investigation of Metal-Olivine Systems and Application to the Deep Interior of Mercury

NASA Astrophysics Data System (ADS)

Zhang, Zhou; Pommier, Anne

2017-12-01

We report electrical conductivity measurements on metal-olivine systems at about 5 and 6 GPa and up to 1,675°C in order to investigate the electrical properties of core-mantle boundary (CMB) systems. Electrical experiments were conducted in the multianvil apparatus using the impedance spectroscopy technique. The samples are composed of one metal layer (Fe, FeS, FeSi2, or Fe-Ni-S-Si) and one polycrystalline olivine layer, with the metal:olivine ratio ranging from 1:0.7 to 1:9.2. For all samples, we observe that the bulk electrical conductivity increases with temperature from 10-2.5 to 101.8 S/m, which is higher than the conductivity of polycrystalline olivine but lower than the conductivity of the pure metal phase at similar conditions. In some experiments, a conductivity jump is observed at the temperature corresponding to the melting temperature of the metallic phase. Both the metal:olivine ratio and the metal phase geometry control the electrical conductivity of the two-layer samples. By combining electrical results, textural analyses of the samples, and previous studies of the structure and composition of Mercury's interior, we propose an electrical profile of the deep interior of the planet that accounts for a layered CMB-outer core structure. The electrical model agrees with existing conductivity estimates of Mercury's lower mantle and CMB using magnetic observations and thermodynamic calculations, and thus, supports the hypothesis of a layered CMB-outermost core structure in the present-day interior of Mercury. We propose that the layered CMB-outer core structure is possibly electrically insulating, which may influence the planet's structure and cooling history.

Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors.

PubMed

Liu, Jiangwei; Koide, Yasuo

2017-01-01

Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobility, and high breakdown field. Meanwhile, since diamond has good biocompatibility, long-term durability, good chemical inertness, and a large electron-chemical potential window, it is a suitable candidate for the fabrication of biosensors. Here, we demonstrate the fabrication of hydrogenated diamond (H-diamond) based metal-insulator-semiconductor field-effect transistors (MISFETs). The fabrication is based on the combination of laser lithography, dry-etching, atomic layer deposition (ALD), sputtering deposition (SD), electrode evaporation, and lift-off techniques. The gate insulator is high-k HfO 2 with a SD/ALD bilayer structure. The thin ALD-HfO 2 film (4.0 nm) acts as a buffer layer to prevent the hydrogen surface of the H-diamond from plasma discharge damage during the SD-HfO 2 deposition. The growth of H-diamond epitaxial layer, fabrication of H-diamond MISFETs, and electrical property measurements for the MISFETs is demonstrated. This chapter explains the fabrication of H-diamond FET based biosensors.

A layered microchip conductance detector with through-layer access to detection fields and high sensitivity to dielectric constant.

PubMed

Suganuma, Y; Dhirani, A-A

2011-04-01

The present study explores a novel apertured microchip conductance detector (AMCD) that is sensitive to dielectric constant. Fashioned on silicon oxide/silicon using optical microlithography, the detector has novel parallel-plate geometry with a top mesh electrode, a middle apertured insulator, and a bottom conducting electrode. This monolithic apertured architecture is planar and may be provided with a thin insulator layer enabling large capacitances, while the top mesh electrode and middle apertured-insulator enable access to regions of the capacitor where electric fields are strong. Hence, the detector is sensitive yet mechanically robust. To test its response, the AMCD was immersed in various solvents, namely water, methanol, acetonitrile, and hexanes. Its response was found to vary in proportion to the solvents' respective dielectric constants. The AMCD was also able to distinguish quantitatively the presence of various molecules in solution, including molecules with chromophores [such as acetylsalicylic acid (ASA)] in methanol and those without chrompohores [such as polyethylene glycol 200 Daltons (PEG200)] in methanol or water. The universal nature of dielectric constant and the microchip detector's sensitivity point to a wide range of potential applications. © 2011 American Institute of Physics

Thermal insulating conformal blanket

NASA Technical Reports Server (NTRS)

Barney, Andrea (Inventor); Whittington, Charles A (Inventor); Eilertson, Bryan (Inventor); Siminski, Zenon (Inventor)

2003-01-01

The conformal thermal insulating blanket may have generally rigid batting material covered by an outer insulating layer formed of a high temperature resistant woven ceramic material and an inner insulating layer formed of a woven ceramic fiber material. The batting and insulating layers may be fastened together by sewing or stitching using an outer mold layer thread fabricated of a high temperature resistant material and an inner mold layer thread of a ceramic fiber material. The batting may be formed to a composite structure that may have a firmness factor sufficient to inhibit a pillowing effect after the stitching to not more than 0.03 inch. The outer insulating layer and an upper portion of the batting adjacent the outer insulating layer may be impregnated with a ceramic coating material.

Multilayer capacitor suitable for substrate integration and multimegahertz filtering

DOEpatents

Ngo, Khai D. T.

1990-01-01

A multilayer capacitor comprises stacked, spaced-apart electrodes of sheet form, dielectric layers between the electrodes, and first and second groups of spaced-apart conductive vias extending transversely of the sheet-form electrodes and through aligned holes in the dielectric layers. Alternate electrodes are instantaneously positive, and the remaining electrodes are instantaneously negative. Each via of the first group is electrically connected to the positive electrodes and passes insulatingly through the negative electrodes. Similarly, each via of the second group is electrically connected to the negative electrodes and passes insulatingly through the positive electrodes. Each via has, in the plane of the electrodes, a cross-sectional form in the shape of an elongated rib of greater length than width. The elongated ribs of the first group are disposed in a first plurality of rows with their lengths in spaced-apart, aligned relationship, and the ribs of the second group are disposed in a second plurality of rows with their lengths in spaced-apart, aligned relationship. The first plurality of rows is disposed substantially orthogonally with respect to the second plurality of rows.

Boron nitride nanotubes and nanosheets.

PubMed

Golberg, Dmitri; Bando, Yoshio; Huang, Yang; Terao, Takeshi; Mitome, Masanori; Tang, Chengchun; Zhi, Chunyi

2010-06-22

Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), a BN nanotube (BNNT) was first predicted in 1994; since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a band gap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess a high chemical stability, excellent mechanical properties, and high thermal conductivity. The same advantages are likely applicable to a graphene analogue-a monatomic layer of a hexagonal BN. Such unique properties make BN nanotubes and nanosheets a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, functional composites, hydrogen accumulators, electrically insulating substrates perfectly matching the CNT, and graphene lattices. This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotube/nanosheet developments.

Electric and Magnetic Manipulation of Biological Systems

NASA Astrophysics Data System (ADS)

Lee, H.; Hunt, T. P.; Liu, Y.; Ham, D.; Westervelt, R. M.

2005-06-01

New types of biological cell manipulation systems, a micropost matrix, a microelectromagnet matrix, and a microcoil array, were developed. The micropost matrix consists of post-shaped electrodes embedded in an insulating layer. With a separate ac voltage applied to each electrode, the micropost matrix generates dielectrophoretic force to trap and move individual biological cells. The microelectromagnet matrix consists of two arrays of straight wires aligned perpendicular to each other, that are covered with insulating layers. By independently controlling the current in each wire, the microelectromagnet matrix creates versatile magnetic fields to manipulate individual biological cells attached to magnetic beads. The microcoil array is a set of coils implemented in a foundry using a standard silicon fabrication technology. Current sources to the coils, and control circuits are integrated on a single chip, making the device self-contained. Versatile manipulation of biological cells was demonstrated using these devices by generating optimized electric or magnetic field patterns. A single yeast cell was trapped and positioned with microscopic resolution, and multiple yeast cells were trapped and independently moved along the separate paths for cell-sorting.

Microfluidic channel fabrication method

DOEpatents

Arnold, Don W.; Schoeniger, Joseph S.; Cardinale, Gregory F.

2001-01-01

A new channel structure for microfluidic systems and process for fabricating this structure. In contrast to the conventional practice of fabricating fluid channels as trenches or grooves in a substrate, fluid channels are fabricated as thin walled raised structures on a substrate. Microfluidic devices produced in accordance with the invention are a hybrid assembly generally consisting of three layers: 1) a substrate that can or cannot be an electrical insulator; 2) a middle layer, that is an electrically conducting material and preferably silicon, forms the channel walls whose height defines the channel height, joined to and extending from the substrate; and 3) a top layer, joined to the top of the channels, that forms a cover for the channels. The channels can be defined by photolithographic techniques and are produced by etching away the material around the channel walls.

Direct Observation of Surface Potential Distribution in Insulation Resistance Degraded Acceptor-Doped BaTiO3 Multilayered Ceramic Capacitors

NASA Astrophysics Data System (ADS)

Hong, Kootak; Lee, Tae Hyung; Suh, Jun Min; Park, Jae-Sung; Kwon, Hyung-Soon; Choi, Jaeho; Jang, Ho Won

2018-05-01

Insulation resistance (IR) degradation in BaTiO3 is a key issue for developing miniaturized multilayer ceramic capacitors (MLCCs) with high capacity. Despite rapid progress in BaTiO3-based MLCCs, the mechanism of IR degradation is still controversial. In this study, we demonstrate the Al doping effect on IR degradation behavior of BaTiO3 MLCCs by electrical measurements and scanning Kelvin probe microscopy (SKPM). As the Al doping concentration in BaTiO3 increases, IR degradation of MLCCs seems to be suppressed from electrical characterization results. However, SKPM results reveal that the conductive regions near the cathode become lager with Al doping after IR degradation. The formation of conducting regions is attributed to the migration of oxygen vacancies, which is the origin of IR degradation in BaTiO3, in dielectric layers. These results imply that acceptor doping in BaTiO3 solely cannot suppress the IR degradation in MLCC even though less asymmetric IR characteristics and IR degradation in MLCCs with higher Al doping concentration are observed from electrical characterization. Our results strongly suggest that observing the surface potential distribution in IR degraded dielectric layers using SKPM is an effective method to unravel the mechanism of IR degradation in MLCCs.

Multiple density layered insulator

DOEpatents

Alger, Terry W.

1994-01-01

A multiple density layered insulator for use with a laser is disclosed wh provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation.

Multiple density layered insulator

DOEpatents

Alger, T.W.

1994-09-06

A multiple density layered insulator for use with a laser is disclosed which provides at least two different insulation materials for a laser discharge tube, where the two insulation materials have different thermoconductivities. The multiple layer insulation materials provide for improved thermoconductivity capability for improved laser operation. 4 figs.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

PubMed

Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-12-14

The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

Hydrogen plasma tests of some insulating coating systems for the nuclear rocket thrust chamber

NASA Technical Reports Server (NTRS)

Current, A. N.; Grisaffe, S. J.; Wycoff, K. C.

1972-01-01

Several plasma-sprayed and slurry-coated insulating coating systems were evaluated for structural stability in a low-pressure hot hydrogen environment at a maximum heat flux of 19.6 million watts/sq meter. The heat was provided by an electric-arc plasma generator. The coating systems consisted of a number of thin layers of metal oxides and/or metals. The materials included molybdenum, nichrome, tungsten, alumina, zirconia, and chromia. The study indicates potential usefulness in this environment for some coatings, and points up the need for improved coating application techniques.

Composite multilayer insulations for thermal protection of aerospace vehicles

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A.; Pitts, William C.

1989-01-01

Composite flexible multilayer insulation systems (MLI), consisting of alternating layers of metal foil and scrim cloth or insulation quilted together using ceramic thread, were evaluated for thermal performance and compared with a silica fibrous (baseline) insulation system. The systems studied included: (1) alternating layers of aluminoborosilicate (ABS) scrim cloth and stainless steel foil, with silica, ABS, or alumina insulation; (2) alternating layers of scrim cloth and aluminum foil, with silica or ABS insulation; (3) alternating layers of aluminum foil and silica or ABS insulation; and (4) alternating layers of aluminum-coated polyimide placed on the bottom of the silica insulation. The MLIs containing aluminum were the most efficient, measuring as little as half the backface temperature increase of the baseline system.

Kinetic simulations of gas breakdown in the dense plasma focus

DOE PAGES

Bennett, N.; Blasco, M.; Breeding, K.; ...

2017-06-09

We describe the first fully-kinetic, collisional, and electromagnetic simulations of the breakdown phase of a MA-scale dense plasma focus and are shown to agree with measured electrical characteristics, including breakdown time. In the model, avalanche ionization is driven by cathode electron emission and this results in incomplete gas breakdown along the insulator. This reinforces the importance of the conditioning process that creates a metallic layer on the insulator surface. The simulations, nonetheless, help explain the relationship between the gas pressure, the insulator length, and the coaxial gap width. In the past, researchers noted three breakdown patterns related to pressure. Simulationmore » and analytic results show that at low pressures, long ionization path lengths lead to volumetric breakdown, while high pressures lead to breakdown across the relatively small coaxial electrode gap. In an intermediate pressure regime, ionization path lengths are comparable to the insulator length which promotes ideal breakdown along the insulator surface.« less

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Extending the high-order-harmonic spectrum using surface plasmon polaritons

NASA Astrophysics Data System (ADS)

Ebadian, H.; Mohebbi, M.

2017-08-01

Nanoparticle assisted high-order-harmonic generation by low-intensity ultrashort laser pulses in hydrogen atomic gas is studied. This work is based on surface plasmon-polariton coupling in metal-insulator-metal structures. The necessary laser intensity is provided by enhancement of the incident laser power in the vicinity of bowtie nanoparticles installed on an insulator-metal structure. The inhomogeneous electric field distribution in the Au nanobowtie gap region is investigated. Simulations show that the insulator layer installed on the Au metal film that supports the plasmon-polariton interactions has a dramatic effect on the field enhancement factor. High-order-harmonic generation cutoffs for different arrangements are calculated and results show that the metal-insulator-metal structure is an excellent device for high-order-harmonic generation purposes. Also, the harmonic cutoff order is extended to more than 170, which is a considerable value and will be an efficient source for extreme ultraviolet radiation.

Ultra-thin, single-layer polarization rotator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca; Do, P. A.

We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.

Low Cost, Single Layer Replacement for the Back-Sheet and Encapsulant Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kempe, M. D.; Thapa, P.

2008-01-01

Ethylene propylene diene monomer (EPDM) based polymers have been formulated for specific use in photovoltaic modules to produce better performance and longer term stability at a lower cost than standard materials. EPDM formulations are advantageous over ethylene vinyl-acetate (EVA) because they can use the same lamination/cure cycle as EVA, they do not need a second back-sheet protective material (e.g. PET/Tedlar), they have a lower glass transition temperature, no melting transition, more constant mechanical moduli as a function of temperature, they are less polar than EVA (provides better corrosion protection), and they have excellent damp heat (85 C/85% relative humidity) resistancemore » against delamination. Module designs typically use EVA on the back side of cells despite the fact that transparency is not advantageous. We have developed a single encapsulant layer that will replace standard module back-sheet constructions consisting of EVA/PET/Tedlar. Because a single low-cost material layer is used, it will provide a significant materials cost savings of about $6 to $8/m{sup 2} as compared to traditional back-sheets. Electrical insulation tests were conducted using 0.85 mm thick stainless steel sheets as a model for a cell. It was found that a polymer layer thickness of about 0.33mm provided better high voltage electrical insulation than a combined film of Tedla (0.038 mm)/PET (0.051 mm)/EVA (0.55 mm). When formulated with a white pigment, reflectivity was comparable to Tedlar{trademark}. Upon accelerated exposure to light at 60C and 60% RH it was found that an EVA layer in front of these materials would decompose before significant yellowing and delamination of the back EPDM layer occurs.« less

Design of a -1 MV dc UHV power supply for ITER NBI

NASA Astrophysics Data System (ADS)

Watanabe, K.; Yamamoto, M.; Takemoto, J.; Yamashita, Y.; Dairaku, M.; Kashiwagi, M.; Taniguchi, M.; Tobari, H.; Umeda, N.; Sakamoto, K.; Inoue, T.

2009-05-01

Procurement of a dc -1 MV power supply system for the ITER neutral beam injector (NBI) is shared by Japan and the EU. The Japan Atomic Energy Agency as the Japan Domestic Agency (JADA) for ITER contributes to the procurement of dc -1 MV ultra-high voltage (UHV) components such as a dc -1 MV generator, a transmission line and a -1 MV insulating transformer for the ITER NBI power supply. The inverter frequency of 150 Hz in the -1 MV power supply and major circuit parameters have been proposed and adopted in the ITER NBI. The dc UHV insulation has been carefully designed since dc long pulse insulation is quite different from conventional ac insulation or dc short pulse systems. A multi-layer insulation structure of the transformer for a long pulse up to 3600 s has been designed with electric field simulation. Based on the simulation the overall dimensions of the dc UHV components have been finalized. A surge energy suppression system is also essential to protect the accelerator from electric breakdowns. The JADA contributes to provide an effective surge suppression system composed of core snubbers and resistors. Input energy into the accelerator from the power supply can be reduced to about 20 J, which satisfies the design criteria of 50 J in total in the case of breakdown at -1 MV.

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

Three-dimensional micro-electrode array for recording dissociated neuronal cultures.

PubMed

Musick, Katherine; Khatami, David; Wheeler, Bruce C

2009-07-21

This work demonstrates the design, fabrication, packaging, characterization, and functionality of an electrically and fluidically active three-dimensional micro-electrode array (3D MEA) for use with neuronal cell cultures. The successful function of the device implies that this basic concept-construction of a 3D array with a layered approach-can be utilized as the basis for a new family of neural electrode arrays. The 3D MEA prototype consists of a stack of individually patterned thin films that form a cell chamber conducive to maintaining and recording the electrical activity of a long-term three-dimensional network of rat cortical neurons. Silicon electrode layers contain a polymer grid for neural branching, growth, and network formation. Along the walls of these electrode layers lie exposed gold electrodes which permit recording and stimulation of the neuronal electrical activity. Silicone elastomer micro-fluidic layers provide a means for loading dissociated neurons into the structure and serve as the artificial vasculature for nutrient supply and aeration. The fluidic layers also serve as insulation for the micro-electrodes. Cells have been shown to survive in the 3D MEA for up to 28 days, with spontaneous and evoked electrical recordings performed in that time. The micro-fluidic capability was demonstrated by flowing in the drug tetrotodoxin to influence the activity of the culture.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

DOEpatents

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

PubMed

Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T

2012-06-06

Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

Hot wire needle probe for thermal conductivity detection

DOEpatents

Condie, Keith Glenn; Rempe, Joy Lynn; Knudson, Darrell lee; Daw, Joshua Earl; Wilkins, Steven Curtis; Fox, Brandon S.; Heng, Ban

2015-11-10

An apparatus comprising a needle probe comprising a sheath, a heating element, a temperature sensor, and electrical insulation that allows thermal conductivity to be measured in extreme environments, such as in high-temperature irradiation testing. The heating element is contained within the sheath and is electrically conductive. In an embodiment, the heating element is a wire capable of being joule heated when an electrical current is applied. The temperature sensor is contained within the sheath, electrically insulated from the heating element and the sheath. The electrical insulation electrically insulates the sheath, heating element and temperature sensor. The electrical insulation fills the sheath having electrical resistance capable of preventing electrical conduction between the sheath, heating element, and temperature sensor. The control system is connected to the heating element and the temperature sensor.

Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

NASA Astrophysics Data System (ADS)

Hong, Won-Eui; Ro, Jae-Sang

2015-01-01

Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films is carried out by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. Arc instability, however, is observed during crystallization, and is attributed to dielectric breakdown in the conductor/insulator/transformed polycrystalline silicon (poly-Si) sandwich structures at high temperatures during electrical pulsing for crystallization. In this study, we devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. The Mo layer was used as a Joule-heat source for the crystallization of pre-patterned active islands of a-Si films. JIC-processed poly-Si thin-film transistors (TFTs) were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.

Tailored plasmon-induced transparency in attenuated total reflection response in a metal-insulator-metal structure.

PubMed

Matsunaga, Kouki; Hirai, Yusuke; Neo, Yoichiro; Matsumoto, Takahiro; Tomita, Makoto

2017-12-19

We demonstrated tailored plasmon-induced transparency (PIT) in a metal (Au)-insulator (SiO 2 )-metal (Ag) (MIM) structure, where the Fano interference between the MIM waveguide mode and the surface plasmon polariton (SPP) resonance mode induced a transparency window in an otherwise opaque wavenumber (k) region. A series of structures with different thicknesses of the Ag layer were prepared and the attenuated total reflection (ATR) response was examined. The height and width of the transparency window, as well as the relevant k-domain dispersion, were controlled by adjusting the Ag layer thickness. To confirm the dependency of PIT on Ag layer thickness, we performed numerical calculations to determine the electric field amplitude inside the layers. The steep k-domain dispersion in the transparency window is capable of creating a lateral beam shift known as the Goos-Hänchen shift, for optical device and sensor applications. We also discuss the Fano interference profiles in a ω - k two-dimensional domain on the basis of Akaike information criteria.

Partial Discharge Characteristics in Composite Insulation Systems with PPLP for HTS Cable

NASA Astrophysics Data System (ADS)

Kikuchi, Y.; Yamashita, K.; Kumada, A.; Hidaka, K.; Tatamidani, K.; Masuda, T.

2014-05-01

The electrical insulation system of high-temperature superconducting (HTS) cable consists of liquid nitrogen (N2(l)) and polypropylene laminated paper (PPLP). Partial discharge (PD) may occur in butt gaps of the insulation layers and its characteristics imply the insulation performance of HTS cables. N2(l) cooling system is installed in the power system and N2(l) will flow through the cables during the system operation. Filling the HTS cable with N2(l) in order to perform pre-shipment inspection is time-consuming and costly for cable manufacturers. Therefore, they are trying to find a cost effective method for pre-shipment inspections. One alternative is to use high pressure gaseous nitrogen (N2(g)) instead of N2(l). This article investigates PD characteristics such as PD inception electric field (PDIE) and PD extinction electric field (PDEE) in butt gaps of HTS cables in 0.1 to 0.3 MPa and 0.1 MPa to 1.0 MPa N2(g) environments. For assessing the surface/volume effects, PD characteristics are measured with changing the size of butt gaps. It turns out that PDIE and PDEE in N2(g) are linearly correlated with those in N2(l) at any gas pressure in our testing, and PDIE in 1.0 MPa N2(g) is almost 30% of that in 0.2 MPa It suggests that PD characteristics in N2(l) can be extrapolated from those in N2(g).

Conductive buffer layers and overlayers for the thermal stability of coated conductors

NASA Astrophysics Data System (ADS)

Cantoni, C.; Aytug, T.; Verebelyi, D. T.; Paranthaman, M.; Specht, E. D.; Norton, D. P.; Christen, D. K.

2001-03-01

We analyze fundamental issues related to the thermal and electrical stability of a coated conductor during its operation. We address the role of conductive buffer layers in the stability of Ni-based coated conductors, and the effect of a metallic cap layer on the electrical properties of Ni alloy-based superconducting tapes. For the first case we report on the fabrication of a fully conductive RABiTS architecture formed of bilayers of conductive oxides SrRuO3 and LaNiO3 on textured Ni tapes. For the second case we discuss measurements of current-voltage relations on Ag/YBa2Cu3O7-d and Cu/Ag/ YBa2Cu3O7-d prototype multilayers on insulating substrates. Limitations on the overall tape structure and properties that are posed by the stability requirement are presented.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Whiskerless Schottky diode

NASA Technical Reports Server (NTRS)

Bishop, William L. (Inventor); Mcleod, Kathleen A. (Inventor); Mattauch, Robert J. (Inventor)

1991-01-01

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

30 CFR 77.503 - Electric conductors; capacity and insulation.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Electric conductors; capacity and insulation... UNDERGROUND COAL MINES Electrical Equipment-General § 77.503 Electric conductors; capacity and insulation. Electric conductors shall be sufficient in size and have adequate current carrying capacity and be of such...

30 CFR 77.503 - Electric conductors; capacity and insulation.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Electric conductors; capacity and insulation... UNDERGROUND COAL MINES Electrical Equipment-General § 77.503 Electric conductors; capacity and insulation. Electric conductors shall be sufficient in size and have adequate current carrying capacity and be of such...

Quantum Electronic Matter in Two Dimensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eisenstein, James

Most often, the electrical properties of a material are described as either "conducting" or "insulating". Copper, everyone knows, is a good conductor. It is the foundation of the electrical infrastructure of the nation. Glass, on the other hand, is an excellent insulator. But do these two words describe all the possibilities? The answer is emphatically no, and the basic subject of the research funded by this grant is aimed at fleshing out a more complete description of the electrical properties of materials. Many people are aware that there are also special materials called superconductors. A superconductor (e.g. aluminum when cooledmore » to very low temperatures) is like a regular conductor except that it conducts electricity with no energy loss at all. Ordinary metals get hot when current flows through them; witness the toaster in your kitchen. In a superconductor something very special is going on: The electrons in the metal don't behave individually as they do in an ordinary conductor. Instead they act collectively. It is this collective aspect that makes superconductors so interesting to physicists. So now we have metals, insulators and superconductors. Is there anything else? We now know the answer is yes. In this research we examine special conducting materials, ones in which the mobile electrons are confined to move on a plane surface (as opposed to motion in all three directions). Examples of such "2D" materials include electrons confined to the interface between two otherwise insulating materials (as in the so-called "semiconductor heterostructures" used here) and the single atomic layer of carbon atoms now known as "graphene". Materials like these are not just museum curiosities; each of the billions of transistors in every smart-phone has a 2D electron system in it. In the work supported by this grant, the focus is on both collective conducting states in semiconductor heterostructures and on the conducting properties of graphene and its few-layer cousins. In particular, the exotic collective (and deeply quantum mechanical) electronic phases which develop when a large magnetic field is applied have been a major focus of effort. Significant results have been obtained from both ordinary electrical measurements and from more sophisticated thermoelectric studies of such systems. Related studies of few-layer graphenes have elucidated the transition from the two- to three-dimensional electrical properties of carbon-based conductors. Investigations like these expand our understanding of electronic materials general. While there are certainly immediate fundamental scientific pay-offs, it is also true that research of this kind ultimately leads to technological breakthroughs in the long term. By way of example, superconductivity was undoubtedly regarded as a useless novelty when it was discovered in 1911. Who could have known then that it would become crucial to the medical revolution brought about by magnetic resonance imaging decades later?« less

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.

Lifetime assessment of atomic-layer-deposited Al2O3-Parylene C bilayer coating for neural interfaces using accelerated age testing and electrochemical characterization.

PubMed

Minnikanti, Saugandhika; Diao, Guoqing; Pancrazio, Joseph J; Xie, Xianzong; Rieth, Loren; Solzbacher, Florian; Peixoto, Nathalia

2014-02-01

The lifetime and stability of insulation are critical features for the reliable operation of an implantable neural interface device. A critical factor for an implanted insulation's performance is its barrier properties that limit access of biological fluids to the underlying device or metal electrode. Parylene C is a material that has been used in FDA-approved implantable devices. Considered a biocompatible polymer with barrier properties, it has been used as a substrate, insulation or an encapsulation for neural implant technology. Recently, it has been suggested that a bilayer coating of Parylene C on top of atomic-layer-deposited Al2O3 would provide enhanced barrier properties. Here we report a comprehensive study to examine the mean time to failure of Parylene C and Al2O3-Parylene C coated devices using accelerated lifetime testing. Samples were tested at 60°C for up to 3 months while performing electrochemical measurements to characterize the integrity of the insulation. The mean time to failure for Al2O3-Parylene C was 4.6 times longer than Parylene C coated samples. In addition, based on modeling of the data using electrical circuit equivalents, we show here that there are two main modes of failure. Our results suggest that failure of the insulating layer is due to pore formation or blistering as well as thinning of the coating over time. The enhanced barrier properties of the bilayer Al2O3-Parylene C over Parylene C makes it a promising candidate as an encapsulating neural interface. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

[XPS analysis of beads formed by fuse breaking of electric copper wire].

PubMed

Wu, Ying; Meng, Qing-Shan; Wang, Xin-Ming; Gao, Wei; Di, Man

2010-05-01

The in-depth composition of beads formed by fuse breaking of the electric copper wire in different circumstances was studied by XPS with Ar+ ion sputtering. In addition, the measured Auger spectra and the calculated Auger parameters were compared for differentiation of the substances of Cu and Cu2O. Corresponding to the sputtering depth, the molten product on a bead induced directly by fuse breaking of the copper wire without cover may be distinguished as three portions: surface layer with a drastic decrease in carbon content; intermediate layer with a gentle change in oxygen content and gradually diminished carbon peak, and consisting of Cu2O; transition layer without Cu2O and with a rapid decrease in oxygen content. While the molten product on a bead formed by fuse breaking of the copper wire after its insulating cover had been burned out may be distinguished as two portions: surface layer with carbon content decreasing quickly; subsurface layer without Cu2O and with carbon and oxygen content decreasing gradually. Thus, it can be seen that there was an obvious interface between the layered surface product and the substrate for the first type of bead, while as to the second type of bead there was no interface. As a result, the presence of Cu2O and the quantitative results can be used to identify the molten product on a bead induced directly by fuse breaking of the copper wire without cover and the molten product on a bead formed by fuse breaking of the cupper wire after its insulating cover had been burned out, as a complementary technique for the judgments of fire cause.

Thermal Insulation System for Non-Vacuum Applications Including a Multilayer Composite

NASA Technical Reports Server (NTRS)

Fesmire, James E. (Inventor)

2017-01-01

The thermal insulation system of the present invention is for non-vacuum applications and is specifically tailored to the ambient pressure environment with any level of humidity or moisture. The thermal insulation system includes a multilayered composite including i) at least one thermal insulation layer and at least one compressible barrier layer provided as alternating, successive layers, and ii) at least one reflective film provided on at least one surface of the thermal insulation layer and/or said compressible barrier layer. The different layers and materials and their combinations are designed to provide low effective thermal conductivity for the system by managing all modes of heat transfer. The thermal insulation system includes an optional outer casing surrounding the multilayered composite. The thermal insulation system is particularly suited for use in any sub-ambient temperature environment where moisture or its adverse effects are a concern. The thermal insulation system provides physical resilience against damaging mechanical effects including compression, flexure, impact, vibration, and thermal expansion/contraction.

Electric Field Distribution in High Voltage Power Modules Using Finite Element Simulations

NASA Astrophysics Data System (ADS)

Wang, Zhao; Liu, Yaoning

2018-03-01

With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It’s demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.

30 CFR 75.513 - Electric conductor; capacity and insulation.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Electric conductor; capacity and insulation. 75.513 Section 75.513 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL... § 75.513 Electric conductor; capacity and insulation. [Statutory Provision] All electric conductors...

30 CFR 75.513 - Electric conductor; capacity and insulation.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Electric conductor; capacity and insulation. 75.513 Section 75.513 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL... § 75.513 Electric conductor; capacity and insulation. [Statutory Provision] All electric conductors...

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, S. A.; Tang, M. H., E-mail: mhtang@xtu.edu.cn, E-mail: lizheng@xtu.edu.cn; Xiao, Y. G.

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to {sup 60}Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Reversible non-volatile switch based on a TCNQ charge transfer complex

NASA Technical Reports Server (NTRS)

DiStefano, Salvador (Inventor); Moacanin, Jovan (Inventor); Nagasubramanian, Ganesan (Inventor)

1993-01-01

A solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.

Reaction and Protection of Electrical Wire Insulators in Atomic-oxygen Environments

NASA Technical Reports Server (NTRS)

Hung, Ching-Cheh; Cantrell, Gidget

1994-01-01

Atomic-oxygen erosion on spacecraft in low Earth orbit is an issue which is becoming increasingly important because of the growing number of spacecraft that will fly in the orbits which have high concentrations of atomic oxygen. In this investigation, the atomic-oxygen durability of three types of electrical wire insulation (carbon-based, fluoropolymer, and polysiloxane elastomer) were evaluated. These insulation materials were exposed to thermal-energy atomic oxygen, which was obtained by RF excitation of air at a pressure of 11-20 Pa. The effects of atomic-oxygen exposure on insulation materials indicate that all carbon-based materials erode at about the same rate as polyamide Kapton and, therefore, are not atomic-oxygen durable. However, the durability of fluoropolymers needs to be evaluated on a case by case basis because the erosion rates of fluoropolymers vary widely. For example, experimental data suggest the formation of atomic fluorine during atomic-oxygen amorphous-fluorocarbon reactions. Dimethyl polysiloxanes (silicone) do not lose mass during atomic-oxygen exposure, but develop silica surfaces which are under tension and frequently crack as a result of loss of methyl groups. However, if the silicone sample surfaces were properly pretreated to provide a certain roughness, atomic oxygen exposure resulted in a sturdy, non-cracked atomic-oxygen durable SiO2 layer. Since the surface does not crack during such silicone-atomic oxygen reaction, the crack-induced contamination by silicone can be reduced or completely stopped. Therefore, with proper pretreatment, silicone can be either a wire insulation material or a coating on wire insulation materials to provide atomic-oxygen durability.

Pressure-induced effects and phase relations in Mg2NiH4

NASA Astrophysics Data System (ADS)

Gavra, Z.; Kimmel, G.; Gefen, Y.; Mintz, Moshe H.

1985-05-01

The low-temperature (<210 °C) crystallographic structure, electrical conductivity, and thermal stability of Mg2NiH4 powders compacted under isostatic pressures of up to 10 kbar were studied. A comparison is made with the corresponding properties of the noncompressed material. It has been concluded that under stress-free hydriding conditions performed below 210 °C, a two-phase hydride mixture is formed. Each of the hydride particles consists of an inner core composed of an hydrogen-deficient monoclinic phase coated by a layer of a stoichiometric orthorhombic phase. The monoclinic phase has a metalliclike electrical conductivity while the orthorhombic phase is insulating. High compaction pressures cause the transformation of the orthorhombic structure into the monoclinic one, thereby resulting in a pressure-induced insulator-to-conductor transition. Reduced decomposition temperatures are obtained for the compressed hydrides. This reduction is attributed to kinetic factors rather than to a reduced thermodynamic stability.

Thin-film topological insulators for continuously tunable terahertz absorption

NASA Astrophysics Data System (ADS)

West, D.; Zhang, S. B.

2018-02-01

One of the defining characteristics of a three-dimensional topological insulator (TI) is the appearance of a Dirac cone on its surface when it creates an interface with vacuum. For thin film TIs, however, the Dirac cones on opposite surfaces interact forming a small gap. For the case of three quintuple layers of Bi2Se3, we show that this gap can be continuously tuned between 128 meV and 0 meV with the application of modest perpendicular electric fields of less than 30 meV Å-1. Through both the Hamiltonian model and first-principles density functional theory calculations, we show that the inherent nonlinearity in realistic Dirac cone interaction leads to a gap which can be continuously tuned through the application of an external electric field. This tunability, coupled with the high optical absorption of thin film TIs, make this a very promising platform for terahertz and infrared detection.

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

PubMed

Saito, Yu; Iwasa, Yoshihiro

2015-03-24

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Electronic Properties of Suspended Few-Layer Graphene Membranes

NASA Astrophysics Data System (ADS)

Myhro, Kevin Scott

Graphene, the two-dimensional (2D) honeycomb lattice of sp2-hybrized carbon atoms, has emerged as a "wonder" material with unique properties, such as its linear energy dispersion with massless Dirac fermions, so-called half-integer quantum Hall (QH) effect, unparalleled tensile strength, and high optical transparency and thermal conductivity. Its few-layer counterparts have similar mechanical but remarkably different electrical properties, including layer- and stacking-dependent band structures, massive charge carriers, and energy gaps that may arise from single particle effect as well as electronic interactions. This dissertation reports my six year study of dual-gated suspended few-layer graphene (FLG) field effect transistor (FET) devices. In particular, we focus on their electronic transport properties at low temperature as a function of out-of-plane electric field E⊥ and interlayer potential U⊥, charge carrier density n, temperature T, and out-of-plane (B ⊥) and parallel (B∥) magnetic fields. A number of broken symmetry states in the absence and presence of external fields are observed in rhombohedral-stacked bilayer- (BLG), trilayer- (r-TLG), and tetralayer graphene (r-4LG). We also study the morphological deformation of suspended graphene membranes under electrostatic and thermal manipulation, which is relevant for analyzing low temperature transport data. In particular, in BLG, r-TLG and r-4LG, we observe intrinsic insulating states in the absence of external fields, with energy gaps of 2, 40, and 80 meV, respectively. We attribute this increasing gap size with number of layers N to enhanced electronic-interactions near the charge neutrality point, due to the layer-dependent energy dispersions kN in r-FLG, which give rise to increasingly diverging density of states and interaction strength with increasing N, at least up to four layers. Our observations of the spontaneous insulating state in r-FLG are consistent with a layer antiferromagnetic state with broken time reversal symmetry, where the top and bottom layers are oppositely spin polarized.

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

NASA Astrophysics Data System (ADS)

Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

2015-10-01

Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.

A pH sensor based on electric properties of nanotubes on a glass substrate

PubMed Central

Nakamura, Motonori; Ishii, Atsushi; Subagyo, Agus; Hosoi, Hirotaka; Sueoka, Kazuhisa; Mukasa, Koichi

2007-01-01

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface. PMID:21806848

Equivalent circuit and optimum design of a multilayer laminated piezoelectric transformer.

PubMed

Dong, Shuxiang; Carazo, Alfredo Vazquez; Park, Seung Ho

2011-12-01

A multilayer laminated piezoelectric Pb(Zr(1-x)Ti(x))O(3) (PZT) ceramic transformer, operating in a half- wavelength longitudinal resonant mode (λ/2 mode), has been analyzed. This piezoelectric transformer is composed of one thickness-polarized section (T-section) for exciting the longitudinal mechanical vibrations, two longitudinally polarized sections (L-section) for generating high-voltage output, and two insulating layers laminated between the T-section and L-section layers to provide insulation between the input and output sections. Based on the piezoelectric constitutive and motion equations, an electro-elasto-electric (EEE) equivalent circuit has been developed, and correspondingly, an effective EEE coupling coefficient was proposed for optimum design of this multilayer transformer. Commercial finite element analysis software is used to determine the validity of the developed equivalent circuit. Finally, a prototype sample was manufactured and experimental data was collected to verify the model's validity.

Origin of electrically heterogeneous microstructure in CuO from scanning tunneling spectroscopy study

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-04-01

We report electronic structure of the grains and grain boundaries (GBs) of the high permittivity (κ˜104) ceramic CuO from scanning tunneling spectroscopy (STS) studies. The p-type semiconducting character of the CuO grains and insulating behavior of the corresponding GBs, observed from STS studies, have been explained. This type of electrically inhomogeneous microstructure leads to the formation of barrier layer capacitance elements in CuO and, hence, provides an explanation of the colossal-κ response exhibited by CuO.

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandhi, S. K.

1981-01-01

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Recent Progress in Electrical Insulation Techniques for HTS Power Apparatus

NASA Astrophysics Data System (ADS)

Hayakawa, Naoki; Kojima, Hiroki; Hanai, Masahiro; Okubo, Hitoshi

This paper describes the electrical insulation techniques at cryogenic temperatures, i.e. Cryodielectrics, for HTS power apparatus, e.g. HTS power transmission cables, transformers, fault current limiters and SMES. Breakdown and partial discharge characteristics are discussed for different electrical insulation configurations of LN2, sub-cooled LN2, solid, vacuum and their composite insulation systems. Dynamic and static insulation performances with and without taking account of quench in HTS materials are also introduced.

Impedance and electric modulus approaches to investigate four origins of giant dielectric constant in CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang

2012-03-01

The frequency dependence of electric modulus of polycrystalline CaCu3Ti4O12 (CCTO) ceramics has been investigated. The experimental data have also been analyzed in the complex plane of impedance and electric modulus, and a suitable equivalent circuit has been proposed to explain the dielectric response. Four dielectric responses are first distinguished in the impedance and modulus spectroscopies. The results are well interpreted in terms of a triple insulating barrier capacitor model. Using this model, these four dielectric relaxations are attributed to the domain, domain-boundary, grain-boundary, and surface layer effects with three Maxwell-Wagner relaxations. Moreover, the values of the resistance and capacitance of bulk CCTO phase, domain-boundary, grain-boundary and surface layer contributions have been calculated directly from the peak characteristics of spectroscopic plots.

Monolithic integration of a MOSFET with a MEMS device

DOEpatents

Bennett, Reid; Draper, Bruce

2003-01-01

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

THERMAL INSULATION SYSTEMS

NASA Technical Reports Server (NTRS)

Augustynowicz, Stanislaw D. (Inventor); Fesmire, James E. (Inventor)

2005-01-01

Thermal insulation systems and with methods of their production. The thermal insulation systems incorporate at least one reflection layer and at least one spacer layer in an alternating pattern. Each spacer layer includes a fill layer and a carrier layer. The fill layer may be separate from the carrier layer, or it may be a part of the carrier layer, i.e., mechanically injected into the carrier layer or chemically formed in the carrier layer. Fill layers contain a powder having a high surface area and low bulk density. Movement of powder within a fill layer is restricted by electrostatic effects with the reflection layer combined with the presence of a carrier layer, or by containing the powder in the carrier layer. The powder in the spacer layer may be compressed from its bulk density. The thermal insulation systems may further contain an outer casing. Thermal insulation systems may further include strips and seams to form a matrix of sections. Such sections serve to limit loss of powder from a fill layer to a single section and reduce heat losses along the reflection layer.

NPS Field Experimentation Program For Special Operations (FEPSO) TNT 13-2 Report

DTIC Science & Technology

2013-04-01

self -­‐form   and   self -­‐ heal  with  without   operator   intervention.   Trends  in  current  tactical...layer   two   self -­‐forming-­‐ self   healing  peer-­‐to-­‐peer   topologies.  In  this  later  group,  we  see  emerging  mesh...the   shock.   The   electrically   insulative   sub-­‐layer,   made   of   rubber   or

Apparatus and method for electrical insulation in plasma discharge systems

DOEpatents

Rhodes, Mark A [Redwood City, CA; Fochs, Scott N [Livermore, CA

2003-08-12

An apparatus and method to contain plasma at optimal fill capacity of a metallic container is disclosed. The invention includes the utilization of anodized layers forming the internal surfaces of the container volume. Bias resistors are calibrated to provide constant current at variable voltage conditions. By choosing the appropriate values of the bias resistors, the voltages of the metallic container relative to the voltage of an anode are adjusted to achieve optimal plasma fill while minimizing the chance of reaching the breakdown voltage of the anodized layer.

Electrical wire insulation and electromagnetic coil

DOEpatents

Bich, George J.; Gupta, Tapan K.

1984-01-01

An electromagnetic coil for high temperature and high radiation application in which glass is used to insulate the electrical wire. A process for applying the insulation to the wire is disclosed which results in improved insulation properties.

Semi-flexible gas-insulated transmission line using electric field stress shields

DOEpatents

Cookson, Alan H.; Dale, Steinar J.; Bolin, Philip C.

1982-12-28

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections.

Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

NASA Astrophysics Data System (ADS)

Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

2013-03-01

Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

DOEpatents

Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

2014-06-10

A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

Water Density in the Electric Double Layer at the Insulator/Electrolyte Solution Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhonov,A.

I studied the spatial structure of the thick transition region between n-hexane and a colloidal solution of 7-nm silica particles by X-ray reflectivity and grazing incidence small-angle scattering. The interfacial structure is discussed in terms of a semiquantitative interface model wherein the potential gradient at the n-hexane/sol interface reflects the difference in the potentials of 'image forces' between the cationic Na{sup +} and anions (nanoparticles) and the specific adsorption of surface charge at the interface between the adsorbed layer and the solution, as well as at the interface between the adsorbed layer and n-hexane. The X-ray scattering data revealed thatmore » the average density of water in the field {approx}10{sup 9}-10{sup 10} V/m of the electrical double layer at the hexane/silica sol interface is the same as, or only few percent higher (1-7%) than, its density under normal conditions.« less

An experimental investigation of electric flashover across solid insulators in vacuum

NASA Technical Reports Server (NTRS)

Vonbaeyer, H. C.

1984-01-01

The insulation of high voltage conductors often employs solid insulators for many applications. In such applications, an unexpected electric flashover may occur along the insulator surface. Under conditions of high vacuum, the flashover voltage across the insulator is observed to be lower compared with that of the same electrode separation without an insulator. The reason for such an extreme reduction of flashover voltage is not well understood. Several models based on the secondary electron emission, were proposed to explain the onset of the surface flashover. The starting point and the developing velocity of the surface flashover were determined. An intensified image converter camera was used to observe the initial stage of electrical flashover along the insulator surface parallel to the electric field. Several different insulator materials were used as test pieces to determine the effect of the dielectric constant on the flashover voltage characteristics.

Electromagnetic Nondestructive Evaluation of Wire Insulation and Models of Insulation Material Properties

NASA Technical Reports Server (NTRS)

Bowler, Nicola; Kessler, Michael R.; Li, Li; Hondred, Peter R.; Chen, Tianming

2012-01-01

Polymers have been widely used as wiring electrical insulation materials in space/air-craft. The dielectric properties of insulation polymers can change over time, however, due to various aging processes such as exposure to heat, humidity and mechanical stress. Therefore, the study of polymers used in electrical insulation of wiring is important to the aerospace industry due to potential loss of life and aircraft in the event of an electrical fire caused by breakdown of wiring insulation. Part of this research is focused on studying the mechanisms of various environmental aging process of the polymers used in electrical wiring insulation and the ways in which their dielectric properties change as the material is subject to the aging processes. The other part of the project is to determine the feasibility of a new capacitive nondestructive testing method to indicate degradation in the wiring insulation, by measuring its permittivity.

The Development and Application of Simulative Insulation Resistance Tester

NASA Astrophysics Data System (ADS)

Jia, Yan; Chai, Ziqi; Wang, Bo; Ma, Hao

2018-02-01

The insulation state determines the performance and insulation life of electrical equipment, so it has to be judged in a timely and accurate manner. Insulation resistance test, as the simplest and most basic test of high voltage electric tests, can measure the insulation resistance and absorption ratio which are effective criterion of part or whole damp or dirty, breakdown, severe overheating aging and other insulation defects. It means that the electrical test personnel need to be familiar with the principle of insulation resistance test, and able to operate the insulation resistance tester correctly. At present, like the insulation resistance test, most of electrical tests are trained by physical devices with the real high voltage. Although this allows the students to truly experience the test process and notes on security, it also has certain limitations in terms of safety and test efficiency, especially for a large number of new staves needing induction training every year. This paper presents a new kind of electrical test training system based on the simulative device of dielectric loss measurement and simulative electrical testing devices. It can not only overcome the defects of current training methods, but also provide other advantages in economical efficiency and scalability. That makes it possible for the system to be allied in widespread.

Cryogenic electrical properties of irradiated cyanate ester/epoxy insulation for fusion magnets

NASA Astrophysics Data System (ADS)

Li, X.; Wu, Z. X.; Li, J.; Xu, D.; Liu, H. M.; Huang, R. J.; Li, L. F.

2017-12-01

The insulation materials used in high field fusion magnets require excellent mechanical properties, high electrical breakdown strength, good thermal conductivity and high radiation tolerance. Previous investigations showed that cyanate ester/epoxy (CE/EP) insulation material, a candidate insulation for fusion magnets, can maintain good mechanical performance at cryogenic temperature after 10 MGy irradiation and has a much longer pot life than traditional epoxy insulation material. In order to quantify the electrical properties of the CE/EP insulation material at low temperature, a cryogenic electrical property testing system cooled by a G-M cryocooler was developed for this study. An insulation material with 40% cyanate ester and 60% epoxy was subjected to 60Co γ-ray irradiation in air at ambient temperature with a dose rate of 300 Gy/min, and total doses of 1 MGy, 5 MGy and 10 MGy. The electrical breakdown strength of this CE/EP insulation material was measured before and after irradiation. The results show that cryogenic temperature has a positive effect on the electrical breakdown strength of this composite, while the influence of 60Co γ-ray irradiation is not obvious at 6.1 K.

Multifunctional Nanofluids with 2D Nanosheets for thermal management and tribological applications

NASA Astrophysics Data System (ADS)

Taha Tijerina, Jose Jaime

Conventional heat-transfer fluids such as water, ethylene glycol, standard oils and other lubricants are typically low-efficiency heat-transfer fluids. Thermal management plays a critical factor in many applications where these fluids can be used, such as in motors/engines, solar cells, biopharmaceuticals, fuel cells, high voltage power transmission systems, micro/nanoelectronics mechanical systems (MEMS/NEMS), and nuclear cooling among others. These insulating fluids require superb filler dispersion, high thermal conduction, and for certain applications as in electrical/electronic devices also electrical insulation. The miniaturization and high efficiency of electrical/electronic devices in these fields demand successful heat management and energy-efficient fluid-based heat-transfer systems. Recent advances in layered materials enable large scale synthesis of various two-dimensional (2D) structures. Some of these 2D materials are good choices as nanofillers in heat transfer fluids; mainly due to their inherent high thermal conductivity (TC) and high surface area available for thermal energy transport. Among various 2D-nanostructures, hexagonal boron nitride (h-BN) and graphene (G) exhibit versatile properties such as outstanding TC, excellent mechanical stability, and remarkable chemical inertness. The following research, even though investigate various conventional fluids, will focus on dielectric insulating nanofluids (mineral oil -- MO) with significant thermal performance. It is presented the plan for synthesis and characterization of stable high-thermal conductivity nanofluids using 2D-nanostructures of h-BN, which will be further incorporated at diverse filler concentrations to conventional fluids for cooling applications, without compromising its electrical insulating property. For comparison, properties of h-BN based fluids are compared with conductive fillers such as graphene; where graphene has similar crystal structure of h-BN and also has similar bulk thermal conductivity. Moreover, bot h-BN and graphene are exfoliated through the same method. In essence, this project, for the first time, unravels the behavior of the exfoliated h-BN effect on reinforced conventional fluids under the influence of atomistic scale structures (particularly, electrically insulating and lubricant/cutting fluids), thereby linking the physical, electrical and mechanical properties of these nanoscale materials. The innovative experimental approach is expected to result in de novo strategies for introducing these systems for new concepts and variables to engineer nanofluid properties suitable for very promising industrial applications.

Semi-flexible gas-insulated transmission line using electric field stress shields

DOEpatents

Cookson, A.H.; Dale, S.J.; Bolin, P.C.

1982-12-28

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements and the stress shields may also be utilized in connection with a plug and socket arrangement for providing electrical connection between main conductor sections. 10 figs.

Coherently Coupled ZnO and VO2 Interface studied by Photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Saha, S.; Annadi, A.; Zhao, Y. L.; Gopinadhan, K.; Wang, X.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Herng, T. S.; Nina, Bao; Ariando, -; Ding, Jun; Venkatesan, T.

2012-02-01

In this work we report a study of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire by photoluminescence and electrical transport measurements across the VO2 metal insulator phase transition (MIT). The photoluminescence of the ZnO layer showed a broad hysteresis induced by the phase transition of VO2 while the width of the electrical hysteresis was narrow and unaffected by the over layer. The enhanced width of the PL hysteresis was due to the formation of defects during the MIT as evidenced by a broad hysteresis in the opposite direction to that of the band edge PL in the defect luminescense. Unlike VO2 the defects in ZnO did not fully recover across the phase transition. From the defect luminescence data, oxygen interstitials were found to be the predominant defects in ZnO mediated by the strain from the VO2 phase transition. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces and also for novel device application.

A novel no-insulation winding technique of high temperature-superconducting racetrack coil for rotating applications: A progress report in Korea university.

PubMed

Choi, Y H; Song, J B; Yang, D G; Kim, Y G; Hahn, S; Lee, H G

2016-10-01

This paper presents our recent progress on core technology development for a megawatt-class superconducting wind turbine generator supported by the international collaborative R&D program of the Korea Institute of Energy Technology Evaluation and Planning. To outperform the current high-temperature-superconducting (HTS) magnet technology in the wind turbine industry, a novel no-insulation winding technique was first proposed to develop the second-generation HTS racetrack coil for rotating applications. Here, we briefly report our recent studies on no-insulation (NI) winding technique for GdBCO coated conductor racetrack coils in the following areas: (1) Charging-discharging characteristics of no-insulation GdBCO racetrack coils with respect to external pressures applied to straight sections; (2) thermal and electrical stabilities of no-insulation GdBCO racetrack coils encapsulated with various impregnating materials; (3) quench behaviors of no-insulation racetrack coils wound with GdBCO conductor possessing various lamination layers; (4) electromagnetic characteristics of no-insulation GdBCO racetrack coils under time-varying field conditions. Test results confirmed that this novel NI winding technique was highly promising. It could provide development of a compact, mechanically dense, and self-protecting GdBCO magnet for use in real-world superconducting wind turbine generators.

A novel no-insulation winding technique of high temperature-superconducting racetrack coil for rotating applications: A progress report in Korea university

NASA Astrophysics Data System (ADS)

Choi, Y. H.; Song, J. B.; Yang, D. G.; Kim, Y. G.; Hahn, S.; Lee, H. G.

2016-10-01

This paper presents our recent progress on core technology development for a megawatt-class superconducting wind turbine generator supported by the international collaborative R&D program of the Korea Institute of Energy Technology Evaluation and Planning. To outperform the current high-temperature-superconducting (HTS) magnet technology in the wind turbine industry, a novel no-insulation winding technique was first proposed to develop the second-generation HTS racetrack coil for rotating applications. Here, we briefly report our recent studies on no-insulation (NI) winding technique for GdBCO coated conductor racetrack coils in the following areas: (1) Charging-discharging characteristics of no-insulation GdBCO racetrack coils with respect to external pressures applied to straight sections; (2) thermal and electrical stabilities of no-insulation GdBCO racetrack coils encapsulated with various impregnating materials; (3) quench behaviors of no-insulation racetrack coils wound with GdBCO conductor possessing various lamination layers; (4) electromagnetic characteristics of no-insulation GdBCO racetrack coils under time-varying field conditions. Test results confirmed that this novel NI winding technique was highly promising. It could provide development of a compact, mechanically dense, and self-protecting GdBCO magnet for use in real-world superconducting wind turbine generators.

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

2004-01-01

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Modeling of power transmission and stress grading for corona protection

NASA Astrophysics Data System (ADS)

Zohdi, T. I.; Abali, B. E.

2017-11-01

Electrical high voltage (HV) machines are prone to corona discharges leading to power losses as well as damage of the insulating layer. Many different techniques are applied as corona protection and computational methods aid to select the best design. In this paper we develop a reduced-order model in 1D estimating electric field and temperature distribution of a conductor wrapped with different layers, as usual for HV-machines. Many assumptions and simplifications are undertaken for this 1D model, therefore, we compare its results to a direct numerical simulation in 3D quantitatively. Both models are transient and nonlinear, giving a possibility to quickly estimate in 1D or fully compute in 3D by a computational cost. Such tools enable understanding, evaluation, and optimization of corona shielding systems for multilayered coils.

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

NASA Astrophysics Data System (ADS)

Li, Qi; Wen, Yi; Zhang, Fabi; Li, Haiou; Xiao, Gongli; Chen, Yonghe; Fu, Tao

2018-09-01

A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.

Designing and Implementation a Lab Testing Method for Power Cables Insulation Resistance According with STAS 10411-89, SR EN ISO/CEI/17025/2005

NASA Astrophysics Data System (ADS)

Dobra, R.; Pasculescu, D.; Marc, G.; Risteiu, M.; Antonov, A.

2017-06-01

Insulation resistance measurement is one of the most important tests required by standards and regulations in terms of electrical safety. Why these tests are is to prevent possible accidents caused by electric shock, damage to equipment or outbreak of fire in normal operating conditions of electrical cables. The insulation resistance experiment refers to the testing of electrical cable insulation, which has a measured resistance that must be below the imposed regulations. Using a microcontroller system data regarding the insulation resistance of the power cables is acquired and with SCADA software the test results are displayed.

Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

PubMed

Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

2011-02-02

Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

49 CFR 173.189 - Batteries containing sodium or cells containing sodium.

Code of Federal Regulations, 2013 CFR

2013-10-01

... providing complete electrical insulation of battery terminals or other external electrical connectors. Battery terminals or other electrical connectors penetrating the heat insulation fitted in battery casings must be provided with thermal insulation sufficient to prevent the temperature of the exposed surfaces...

49 CFR 173.189 - Batteries containing sodium or cells containing sodium.

Code of Federal Regulations, 2011 CFR

2011-10-01

..., such as by providing complete electrical insulation of battery terminals or other external electrical connectors. Battery terminals or other electrical connectors penetrating the heat insulation fitted in battery casings must be provided with thermal insulation sufficient to prevent the temperature of the...

49 CFR 173.189 - Batteries containing sodium or cells containing sodium.

Code of Federal Regulations, 2012 CFR

2012-10-01

..., such as by providing complete electrical insulation of battery terminals or other external electrical connectors. Battery terminals or other electrical connectors penetrating the heat insulation fitted in battery casings must be provided with thermal insulation sufficient to prevent the temperature of the...

49 CFR 173.189 - Batteries containing sodium or cells containing sodium.

Code of Federal Regulations, 2014 CFR

2014-10-01

... providing complete electrical insulation of battery terminals or other external electrical connectors. Battery terminals or other electrical connectors penetrating the heat insulation fitted in battery casings must be provided with thermal insulation sufficient to prevent the temperature of the exposed surfaces...

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Prediction of weak topological insulators in layered semiconductors.

PubMed

Yan, Binghai; Müchler, Lukas; Felser, Claudia

2012-09-14

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

Liquid-level sensing device

DOEpatents

Goldfuss, G.T.

1975-09-16

This invention relates to a device for sensing the level of a liquid while preventing the deposition and accumulation of materials on the exterior surfaces thereof. Two dissimilar metal wires are enclosed within an electrical insulating material, the wires being joined together at one end to form a thermocouple junction outside the insulating material. Heating means is disposed within the electrical insulating material and maintains the device at a temperature substantially greater than that of the environment surrounding the device, the heating means being electrically insulated from the two dissimilar thermocouple wires. In addition, a metal sheath surrounds and contacts both the electrical insulating material and the thermocouple junction. Electrical connections are provided for connecting the heating means with a power source and for connecting the thermocouple wires with a device for sensing the electrical potential across the thermocouple junction. (auth)

Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

PubMed

Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

2018-05-09

The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3 insulator.

Meso scale MEMS inertial switch fabricated using an electroplated metal-on-insulator process

NASA Astrophysics Data System (ADS)

Gerson, Y.; Schreiber, D.; Grau, H.; Krylov, S.

2014-02-01

In this work, we report on a novel simple yet robust two-mask metal-on-insulator (MOI) process and illustrate its implementation for the fabrication of a meso scale MEMS inertial switch. The devices were fabricated of a ˜40 µm thick layer of nickel electrodeposited on top of a 4 µm thick thermal field oxide (TOX) covering a single crystal silicon wafer. A 40 µm thick layer of KMPR® resist was used as a mold and allowed the formation of high-aspect-ratio (1:5) metal structures. The devices were released by the sacrificial etching of the TOX layer in hydrofluoric acid. The fabricated devices were mounted in a ceramic enclosure and were characterized using both an electromagnet shaker and a drop tester. The functionality of the switch, aimed to trigger an electrical circuit when subjected to an acceleration pulse with amplitude of 300 g and duration of 200 µs, was demonstrated experimentally and the performance targets were achieved. The experimental results were consistent with the model predictions obtained through finite element simulations.

Physical properties of Ce-TZP at cryogenic temperature

NASA Astrophysics Data System (ADS)

Han, Y. M.; Chen, Z.; Zhou, M.; Huang, R. J.; Huang, C. J.; Li, L. F.

2014-01-01

Electrical insulators, which are used to insulate cryogenic supply lines and conductor windings, are critical units in superconducting TOKAMAK magnets. Electrical insulators used in superconducting magnets fall into axial and radial insulators. These insulators can be made from glass ribbon epoxy densification and have been used in the Experiment Advanced Superconducting Tokamak (EAST). The properties of Ce-TZP can satisfy the requirement of electrical insulators. In this paper, thermal conductivity, mechanical properties and coefficient of thermal expansion of Ce-TZP have been investigated at cryogenic temperatures. Results indicate that the Ce-TZP shows better properties than epoxy and it demonstrates that the Ce-TZP can be used as insulation material in superconducting magnets.

46 CFR 111.60-21 - Cable insulation tests.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Cable insulation tests. 111.60-21 Section 111.60-21 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... electric power and lighting and associated equipment must be checked for proper insulation resistance to...

46 CFR 111.60-21 - Cable insulation tests.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Cable insulation tests. 111.60-21 Section 111.60-21 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... electric power and lighting and associated equipment must be checked for proper insulation resistance to...

46 CFR 111.60-21 - Cable insulation tests.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Cable insulation tests. 111.60-21 Section 111.60-21 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... electric power and lighting and associated equipment must be checked for proper insulation resistance to...

46 CFR 111.60-21 - Cable insulation tests.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Cable insulation tests. 111.60-21 Section 111.60-21 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... electric power and lighting and associated equipment must be checked for proper insulation resistance to...

46 CFR 111.60-21 - Cable insulation tests.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Cable insulation tests. 111.60-21 Section 111.60-21 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... electric power and lighting and associated equipment must be checked for proper insulation resistance to...

Remote high-temperature insulatorless heat-flux gauge

DOEpatents

Noel, B.W.

1993-12-28

A remote optical heat-flux gauge for use in extremely high temperature environments is described. This application is possible because of the use of thermographic phosphors as the sensing media, and the omission of the need for an intervening layer of insulator between phosphor layers. The gauge has no electrical leads, but is interrogated with ultraviolet or laser light. The luminescence emitted by the two phosphor layers, which is indicative of the temperature of the layers, is collected and analyzed in order to determine the heat flux incident on the surface being investigated. The two layers of thermographic phosphor must be of different materials to assure that the spectral lines collected will be distinguishable. Spatial heat-flux measurements can be made by scanning the light across the surface of the gauge. 3 figures.

Remote high-temperature insulatorless heat-flux gauge

DOEpatents

Noel, Bruce W.

1993-01-01

A remote optical heat-flux gauge for use in extremely high temperature environments is described. This application is possible because of the use of thermographic phosphors as the sensing media, and the omission of the need for an intervening layer of insulator between phosphor layers. The gauge has no electrical leads, but is interrogated with ultraviolet or laser light. The luminescence emitted by the two phosphor layers, which is indicative of the temperature of the layers, is collected and analyzed in order to determine the heat flux incident on the surface being investigated. The two layers of thermographic phosphor must be of different materials to assure that the spectral lines collected will be distinguishable. Spatial heat-flux measurements can be made by scanning the light across the surface of the gauge.

Micromachined peristaltic pump

NASA Technical Reports Server (NTRS)

Hartley, Frank T. (Inventor)

1998-01-01

A micromachined pump including a channel formed in a semiconductor substrate by conventional processes such as chemical etching. A number of insulating barriers are established in the substrate parallel to one another and transverse to the channel. The barriers separate a series of electrically conductive strips. An overlying flexible conductive membrane is applied over the channel and conductive strips with an insulating layer separating the conductive strips from the conductive membrane. Application of a sequential voltage to the series of strips pulls the membrane into the channel portion of each successive strip to achieve a pumping action. A particularly desirable arrangement employs a micromachined push-pull dual channel cavity employing two substrates with a single membrane sandwiched between them.

Modeling thermal performance of exterior walls retrofitted from insulation and modified laterite based bricks materials

NASA Astrophysics Data System (ADS)

Wati, Elvis; Meukam, Pierre; Damfeu, Jean Claude

2017-12-01

Uninsulated concrete block walls commonly found in tropical region have to be retrofitted to save energy. The thickness of insulation layer used can be reduced with the help of modified laterite based bricks layer (with the considerably lower thermal conductivity than that of concrete block layer) during the retrofit building fabrics. The aim of this study is to determine the optimum location and distribution of different materials. The investigation is carried out under steady periodic conditions under the climatic conditions of Garoua in Cameroon using a Simulink model constructed from H-Tools (the library of Simulink models). Results showed that for the continuous air-conditioned space, the best wall configuration from the maximum time lag, minimum decrement factor and peak cooling transmission load perspective, is dividing the insulation layer into two layers and placing one at the exterior surface and the other layer between the two different massive layers with the modified laterite based bricks layer at the interior surface. For intermittent cooling space, the best wall configuration from the minimum energy consumption depends on total insulation thickness. For the total insulation thickness less than 8 cm approximately, the best wall configuration is placing the half layer of insulation material at the interior surface and the other half between the two different massive layers with the modified earthen material at the exterior surface. Results also showed that, the optimum insulation thickness calculated from the yearly cooling transmission (estimated only during the occupied period) and some economic considerations slightly depends on the location of that insulation.

Unconventional Topological Phase Transition in Two-Dimensional Systems with Space-Time Inversion Symmetry

NASA Astrophysics Data System (ADS)

Ahn, Junyeong; Yang, Bohm-Jung

2017-04-01

We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and twofold rotation symmetries. Contrary to the case of ordinary time-reversal invariant systems, where a direct transition between two insulators is generally predicted, we find that the topological phase transition in systems with an additional twofold rotation symmetry is mediated by an emergent stable 2D Weyl semimetal phase between two insulators. Here the central role is played by the so-called space-time inversion symmetry, the combination of time-reversal and twofold rotation symmetries, which guarantees the quantization of the Berry phase around a 2D Weyl point even in the presence of strong spin-orbit coupling. Pair creation and pair annihilation of Weyl points accompanying partner exchange between different pairs induces a jump of a 2D Z2 topological invariant leading to a topological phase transition. According to our theory, the topological phase transition in HgTe /CdTe quantum well structure is mediated by a stable 2D Weyl semimetal phase because the quantum well, lacking inversion symmetry intrinsically, has twofold rotation about the growth direction. Namely, the HgTe /CdTe quantum well can show 2D Weyl semimetallic behavior within a small but finite interval in the thickness of HgTe layers between a normal insulator and a quantum spin Hall insulator. We also propose that few-layer black phosphorus under perpendicular electric field is another candidate system to observe the unconventional topological phase transition mechanism accompanied by the emerging 2D Weyl semimetal phase protected by space-time inversion symmetry.

Using stepped anvils to make even insulation layers in laser-heated diamond-anvil cell samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Zhixue; Gu, Tingting; Dobrosavljevic, Vasilije

Here, we describe a method to make even insulation layers for high-pressure laser-heated diamond-anvil cell samples using stepped anvils. Moreover, the method works for both single-sided and double-sided laser heating using solid or fluid insulation. The stepped anvils are used as matched pairs or paired with a flat culet anvil to make gasket insulation layers and not actually used at high pressures; thus, their longevity is ensured. We also compare the radial temperature gradients and Soret diffusion of iron between self-insulating samples and samples produced with stepped anvils and find that less pronounced Soret diffusion occurs in samples with evenmore » insulation layers produced by stepped anvils.« less

Using stepped anvils to make even insulation layers in laser-heated diamond-anvil cell samples

DOE PAGES

Du, Zhixue; Gu, Tingting; Dobrosavljevic, Vasilije; ...

2015-09-01

Here, we describe a method to make even insulation layers for high-pressure laser-heated diamond-anvil cell samples using stepped anvils. Moreover, the method works for both single-sided and double-sided laser heating using solid or fluid insulation. The stepped anvils are used as matched pairs or paired with a flat culet anvil to make gasket insulation layers and not actually used at high pressures; thus, their longevity is ensured. We also compare the radial temperature gradients and Soret diffusion of iron between self-insulating samples and samples produced with stepped anvils and find that less pronounced Soret diffusion occurs in samples with evenmore » insulation layers produced by stepped anvils.« less

Method of fabricating high-density hermetic electrical feedthroughs using insulated wire bundles

DOEpatents

Shah, Kedar G.; Benett, William J.; Pannu, Satinderpall S.

2016-05-10

A method of fabricating electrical feedthroughs coats of a plurality of electrically conductive wires with an electrically insulating material and bundles the coated wires together in a substantially parallel arrangement. The bundled coated wires are secured to each other by joining the electrically insulating material of adjacent wires together to form a monolithic block which is then cut transverse to the wires to produce a block section having opposing first and second sides with a plurality of electrically conductive feedthroughs extending between them.

Termination unit

DOEpatents

Traeholt, Chresten [Frederiksberg, DK; Willen, Dag [Klagshamn, SE; Roden, Mark [Newnan, GA; Tolbert, Jerry C [Carrollton, GA; Lindsay, David [Carrollton, GA; Fisher, Paul W [Heiskell, TN; Nielsen, Carsten Thidemann [Jaegerspris, DK

2014-01-07

This invention relates to a termination unit comprising an end-section of a cable. The end section of the cable defines a central longitudinal axis and comprising end-parts of N electrical phases, an end-part of a neutral conductor and a surrounding thermally insulation envelope adapted to comprising a cooling fluid. The end-parts of the N electrical phases and the end-part of the neutral conductor each comprising at least one electrical conductor and being arranged in the cable concentrically around a core former with a phase 1 located relatively innermost, and phase N relatively outermost in the cable, phase N being surrounded by the neutral conductor, electrical insulation being arrange between neighboring electrical phases and between phase N and the neutral conductor, and wherein the end-parts of the neutral conductor and the electrical phases each comprise a contacting surface electrically connected to at least one branch current lead to provide an electrical connection: The contacting surfaces each having a longitudinal extension, and being located sequentially along the longitudinal extension of the end-section of the cable. The branch current leads being individually insulated from said thermally insulation envelope by individual electrical insulators.

Utilizing insulating nanoparticles as the spacer in laminated flexible polymer solar cells for improved mechanical stability.

PubMed

Lu, Yunzhang; Alexander, Clement; Xiao, Zhengguo; Yuan, Yongbo; Zhang, Runyu; Huang, Jinsong

2012-08-31

Roll-to-roll lamination is one promising technique to produce large-area organic electronic devices such as solar cells with a large through output. One challenge in this process is the frequent electric point shorting of the cathode and anode by the excess or concentrated applied stress from many possible sources. In this paper, we report a method to avoid electric point shorting by incorporating insulating and hard barium titanate (BaTiO(3)) nanoparticles (NPs) into the active layer to work as a spacer. It has been demonstrated that the incorporated BaTiO(3) NPs in poly(3-hexylthiophene):[6,6]-phenyl-c-61-butyric acid methyl ester (P3HT:PCBM) bulk heterojunction solar cells cause no deleterious effect to the power conversion process of this type of solar cell. The resulting laminated devices with NPs in the active layer display the same efficiency as the devices without NPs, while the laminated devices with NPs can sustain a ten times higher lamination stress of over 6 MPa. The flexible polymer solar cell device with incorporated NPs shows a much smaller survivable curvature radius of 4 mm, while a regular flexible device can only sustain a bending curvature radius of 8 mm before fracture.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Method for improving the durability of ion insertion materials

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Cheong, Hyeonsik M.

2002-01-01

The invention provides a method of protecting an ion insertion material from the degradative effects of a liquid or gel-type electrolyte material by disposing a protective, solid ion conducting, electrically insulating, layer between the ion insertion layer and the liquid or gel-type electrolyte material. The invention further provides liquid or gel-type electrochemical cells having improved durability having a pair of electrodes, a pair of ion insertion layers sandwiched between the pair of electrodes, a pair of solid ion conducting layers sandwiched between the ion insertion layers, and a liquid or gel-type electrolyte material disposed between the solid ion conducting layers, where the solid ion conducting layer minimizes or prevents degradation of the faces of the ion insertion materials facing the liquid or gel-type electrolyte material. Electrochemical cells of this invention having increased durability include secondary lithium batteries and electrochromic devices.

An application area of C60: Overall improvement of insulating oil's electrical performance

NASA Astrophysics Data System (ADS)

Sun, Potao; Sima, Wenxia; Chen, Jiaqi; Zhang, Dingfei; Jiang, Xiongwei; Chen, Qiulin

2018-04-01

We prepared nano-C60 based insulating oil, which has the potential to overcome the application barriers of nanomodified insulating oil. We find that nano-C60 based insulating oil has an excellent stability. Its electrical performance increases by 17.9%, 9.3%, and 8.3% for AC and positive/negative lightning impulse voltage, respectively. We believe that C60 molecules have a strong capacity to absorb electrons and can capture photons in a streamer, which may weaken photoionization in the streamer and thereby improve the electrical performance of insulating oil.

Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

NASA Astrophysics Data System (ADS)

Miyao, Masanobu; Sadoh, Taizoh

2017-05-01

Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (˜1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400 °C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (˜300 °C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.

Resistence seam welding thin copper foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hollar, D.L. Jr.

1991-02-01

Use of flat flexible circuits in the electronics industry is expanding. The term flexible circuits'' is defined here as copper foil which has been bonded to an insulating film such as Kapton film. The foil is photo processed to produce individual circuit paths similar to printed circuit boards. Another insulating film is laminated over the conductors to complete the flexible circuit. Flexible circuits, like multiwire cables, are susceptible to electromagnetic radiation (EMR) interference. On multiwire cables the interference problem is mitigated by adding a woven wire braid shielding over the conductors. Shielding on flexible circuits is accomplished by enclosing themore » circuits in a copper foil envelope. However, the copper foil must be electrically sealed around the flexcircuit to be effective. Ultimately, a resistance seam welding process and appropriate equipment were developed which would provide the required electrical seal between two layers of 2-oz (0.0028-inch thick) copper foil on a 1.1-inch wide, 30-inch long, 0.040-inch thick flexible circuit. 4 refs., 19 figs.« less

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

NASA Astrophysics Data System (ADS)

Sim, Jai S.; Zhou, You; Ramanathan, Shriram

2012-10-01

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO2 membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 1020 cm-3. Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO2 ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

Abrasive blast cleaning method for the renewal of worn-out acceleration tubes

NASA Astrophysics Data System (ADS)

Bartha, L.; Koltay, E.; Mórik, Gy.

1996-04-01

The degradation of the electrical properties of acceleration tubes emerging with performance time is known to be assigned mainly to impurities and surface breakdown tracks appearing on the inner surface of the insulators. Consequently, a radical treatment for removing the surface layer may result in a renewal of the tube. An abrasive blast cleaning procedure has been used on a set of worn-out acceleration tube units. The cleaned tube exhibited its original electrical characteristics and it has been used for more than 4000 h of operation up to the maximum rated voltage of our 5 MV electrostatic accelerator without any observable degradation. XRF and PIXE analytical measurements performed on used and blast-treated insulators as well as on electrode and pump oil samples reveal the contribution of elementary processes in the acceleration tube to the ageing of the tube and indicate the effectness of the blasting process used for the re-establishment of clean surface conditions.

Apparatus for detecting leakage of liquid sodium

DOEpatents

Himeno, Yoshiaki

1978-01-01

An apparatus for detecting the leakage of liquid sodium includes a cable-like sensor adapted to be secured to a wall of piping or other equipment having sodium on the opposite side of the wall, and the sensor includes a core wire electrically connected to the wall through a leak current detector and a power source. An accidental leakage of the liquid sodium causes the corrosion of a metallic layer and an insulative layer of the sensor by products resulted from a reaction of sodium with water or oxygen in the atmospheric air so as to decrease the resistance between the core wire and the wall. Thus, the leakage is detected as an increase in the leaking electrical current. The apparatus is especially adapted for use in detecting the leakage of liquid sodium from sodium-conveying pipes or equipment in a fast breeder reactor.

30 CFR 57.12008 - Insulation and fittings for power wires and cables.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Insulation and fittings for power wires and... NONMETAL MINES Electricity Surface and Underground § 57.12008 Insulation and fittings for power wires and cables. Power wires and cables shall be insulated adequately where they pass into or out of electrical...

30 CFR 57.12008 - Insulation and fittings for power wires and cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Insulation and fittings for power wires and... NONMETAL MINES Electricity Surface and Underground § 57.12008 Insulation and fittings for power wires and cables. Power wires and cables shall be insulated adequately where they pass into or out of electrical...

Acceleration of metal-atom diffusion in electric field at metal/insulator interfaces: First-principles study

NASA Astrophysics Data System (ADS)

Nagasawa, Riki; Asayama, Yoshihiro; Nakayama, Takashi

2018-04-01

Metal-atom diffusion from metal electrodes into SiO2 in electric fields was studied using first-principles calculations. It was shown in the case without electric field that the diffusion barrier of a metal atom is mainly made of the cohesive energy of bulk metal layers, while the shape of the diffusion potential reflects the hybridization of the metal-atom state with metal-induced gap states (MIGSs) and the electron transfer between the metal atom and the electrode. We found that the metal-atom diffusion is markedly accelerated by the applied electric field, such that the diffusion barrier ϕB(E) decreases almost linearly with increasing electric field strength E. By analyzing the physical origins of the metal-atom diffusion, we derived the universal formula to estimate the diffusion barrier in the electric field, which is closely related to MIGSs.

Electrically Conductive and Protective Coating for Planar SOFC Stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jung-Pyung; Stevenson, Jeffry W.

Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, preventmore » Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be« less

Fabrication of high performance thin-film transistors via pressure-induced nucleation.

PubMed

Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

2014-10-31

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm(2)/Vs.

Conduit for high temperature transfer of molten semiconductor crystalline material

NASA Technical Reports Server (NTRS)

Fiegl, George (Inventor); Torbet, Walter (Inventor)

1983-01-01

A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

X-ray imaging using amorphous selenium: photoinduced discharge (PID) readout for digital general radiography.

PubMed

Rowlands, J A; Hunter, D M

1995-12-01

Digital radiographic systems based on photoconductive layers with the latent charge image readout by photoinduced discharge (PID) are investigated theoretically. Previously, a number of different systems have been proposed using sandwiched photoconductor and insulator layers and readout using a scanning laser beam. These systems are shown to have the general property of being very closely coupled (i.e., optimization of one imaging characteristic usually impacts negatively on others). The presence of a condensed state insulator between the photoconductor surface and the readout electrode does, however, confer a great advantage over systems using air gaps with their relatively low breakdown field. The greater breakdown field of condensed state dielectrics permits the modification of the electric field during the period between image formation and image readout. The trade-off between readout speed and noise makes this system suitable for instant general radiography and even rapid sequence radiography, however, the system is unsuitable for the low exposure rates used in fluoroscopy.

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

78 FR 4873 - Electrical Protective Equipment Standard and the Electric Power Generation, Transmission, and...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-01-23

..., personal protective equipment, insulating and shielding materials, and insulated tools for working on or...] Electrical Protective Equipment Standard and the Electric Power Generation, Transmission, and Distribution... the information collection requirements specified in its standards on Electrical Protective Equipment...

High power density capacitor and method of fabrication

DOEpatents

Tuncer, Enis

2012-11-20

A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

Hydrothermal growth of ZnO nanowires on flexible fabric substrates

NASA Astrophysics Data System (ADS)

Hong, Gwang-Wook; Yun, Sang-Ho; Kim, Joo-Hyung

2016-04-01

ZnO nanowires (NWs) would provide significant enhancement in sensitivity due to high surface to volume ratio. We investigated the first methodical study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and properties of ZnO NWs grown on different flexible fabric surfaces. To develop a fundamental following concerning various substrates, we controlled the growth speed of ZnO NWs and nanowires on cotton surface with easy and moderate cost fabrication method. Using ammonium hydroxide as the reactant with zinc nitrate hexahydrate, ZnO NWs layer have been grown on metal layers, instead of seed layer. ZnO NWs fabrication was done on different fabric substrates such as wool, nylon and polypropylene (PP). After the ZnO NWs grown to each substrates, we coated insulating layer with polyurethane (PU) and ethyl cellulose for prevent external intervention. Detailed electrical characterization was subsequently performed to reveal the working characteristics of the hybrid fabric. For electrical verification of fabricated ZnO NWs, we implemented measurement impact test and material properties with FFT analyzer and LCR meter.

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential.

PubMed

Kong, Desheng; Dang, Wenhui; Cha, Judy J; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

DC breakdown characteristics of silicone polymer composites for HVDC insulator applications

NASA Astrophysics Data System (ADS)

Han, Byung-Jo; Seo, In-Jin; Seong, Jae-Kyu; Hwang, Young-Ho; Yang, Hai-Won

2015-11-01

Critical components for HVDC transmission systems are polymer insulators, which have stricter requirements that are more difficult to achieve compared to those of HVAC insulators. In this study, we investigated the optimal design of HVDC polymer insulators by using a DC electric field analysis and experiments. The physical properties of the polymer specimens were analyzed to develop an optimal HVDC polymer material, and four polymer specimens were prepared for DC breakdown experiments. Single and reverse polarity breakdown tests were conducted to analyze the effect of temperature on the breakdown strength of the polymer. In addition, electric fields were analyzed via simulations, in which a small-scale polymer insulator model was applied to prevent dielectric breakdown due to electric field concentration, with four DC operating conditions taken into consideration. The experimental results show that the electrical breakdown strength and the electric field distribution exhibit significant differences in relation to different DC polarity transition procedures.

Dielectrophoretic systems without embedded electrodes

DOEpatents

Cummings, Eric B [Livermore, CA; Singh, Anup K [San Francisco, CA

2006-03-21

Method and apparatus for dielectrophoretic separation of particles in a fluid based using array of insulating structures arranged in a fluid flow channel. By utilizing an array of insulating structures, a spatially inhomogeneous electric field is created without the use of the embedded electrodes conventionally employed for dielectrophoretic separations. Moreover, by using these insulating structures a steady applied electric field has been shown to provide for dielectrophoresis in contrast to the conventional use of an alternating electric field. In a uniform array of posts, dielectrophoretic effects have been produced flows having significant pressure-driven and electrokinetic transport. Above a threshold applied electric field, filaments of concentrated and rarefied particles appear in the flow as a result of dielectrophoresis. Above a higher threshold applied voltage, dielectrophoresis produces zones of highly concentrated and immobilized particles. These patterns are strongly influenced by the angle of the array of insulating structures with respect to the mean applied electric field and the shape of the insulating structures.

Technique eliminates high voltage arcing at electrode-insulator contact area

NASA Technical Reports Server (NTRS)

Mealy, G.

1967-01-01

Coating the electrode-insulator contact area with silver epoxy conductive paint and forcing the electrode and insulator tightly together into a permanent connection, eliminates electrical arcing in high-voltage electrodes supplying electrical power to vacuum facilities.

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

NASA Astrophysics Data System (ADS)

Yan, S. A.; Zhao, W.; Guo, H. X.; Xiong, Y.; Tang, M. H.; Li, Z.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.

2015-01-01

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Inhomogeneous field induced magnetoelectric effect in Mott insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boulaevskii, Lev N; Batista, Cristian D

2008-01-01

We consider a Mott insulator like HoMnO{sub 3} whose magnetic lattice is geometrically frustrated and comprises a 3D array of triangular layers with magnetic moments ordered in a 120{sup o} structure. We show that the effect of a uniform magnetic field gradient, {gradient}H, is to redistribute the electronic charge of the magnetically ordered phase leading to a unfirom electric field gradient. The resulting voltage difference between the crystal edges is proportional to the square of the crystal thickness, or inter-edge distance, L. It can reach values of several volts for |{gradient}H| {approx} 0.01 T/cm and L {approx_equal} 1mm, as longmore » as the crystal is free of antiferromagnetic domain walls.« less

Design analysis of ceramic and polymer 150 kV insulators for tropical condition using quickfield software

NASA Astrophysics Data System (ADS)

Walukow, Stephy B.; Manjang, Salama; Zainuddin, Zahir; Samman, Faizal Arya

2018-03-01

This research is to analyze design of ceramic and polymer 150 kV insulators for the tropical area. The use of an insulator certainly requires an electric field. The leakage current and breakdown voltage this happens the contaminant on the surface of the insulator. This type of contaminant can be rain, dust, salt air, extreme weather (much in tropical climates), industrial pollutants and cracks on the surface resulting in collisions. The method used in this research is magnetic field and electric field isolator using Quicfield software. To get the test results variation ranges 20 kV, 70 kV and 150 kV. Side effects of magnetic and electric fields around the insulator. The simulation results show the accumulated contaminants on the surface. Planning should be done in insulator insulator on unstable insulator. Thus, the approach using this commercially available software can be applied to. Therefore, the development of further simulations on the different types of composite insulators used on.

Self-cooling mono-container fuel cell generators and power plants using an array of such generators

DOEpatents

Gillett, J.E.; Dederer, J.T.; Zafred, P.R.

1998-05-12

A mono-container fuel cell generator contains a layer of interior insulation, a layer of exterior insulation and a single housing between the insulation layers, where fuel cells, containing electrodes and electrolyte, are surrounded by the interior insulation in the interior of the generator, and the generator is capable of operating at temperatures over about 650 C, where the combination of interior and exterior insulation layers have the ability to control the temperature in the housing below the degradation temperature of the housing material. The housing can also contain integral cooling ducts, and a plurality of these generators can be positioned next to each other to provide a power block array with interior cooling. 7 figs.

Dark current of organic heterostructure devices with insulating spacer layers

NASA Astrophysics Data System (ADS)

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

2015-03-01

The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

DOE PAGES

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; ...

2015-05-14

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

Forming Refractory Insulation On Copper Wire

NASA Technical Reports Server (NTRS)

Setlock, J.; Roberts, G.

1995-01-01

Alternative insulating process forms flexible coat of uncured refractory insulating material on copper wire. Coated wire formed into coil or other complex shape. Wire-coating apparatus forms "green" coat on copper wire. After wire coiled, heating converts "green" coat to refractory electrical insulator. When cured to final brittle form, insulating material withstands temperatures above melting temperature of wire. Process used to make coils for motors, solenoids, and other electrical devices to be operated at high temperatures.

Electrochemical cell design

DOEpatents

Arntzen, John D.

1978-01-01

An electrochemical cell includes two outer electrodes and a central electrode of opposite polarity, all nested within a housing having two symmetrical halves which together form an offset configuration. The outer electrodes are nested within raised portions within the side walls of each housing half while the central electrode sealingly engages the perimetric margins of the side-wall internal surfaces. Suitable interelectrode separators and electrical insulating material electrically isolate the central electrode from the housing and the outer electrodes. The outer electrodes are electrically connected to the internal surfaces of the cell housing to provide current collection. The nested structure minimizes void volume that would otherwise be filled with gas or heavy electrolyte and also provides perimetric edge surfaces for sealing and supporting at the outer margins of frangible interelectrode separator layers.

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2

PubMed Central

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A.; Mertelj, Tomaz; Mihailovic, Dragan

2015-01-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a “hidden” (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a “Devil’s staircase.” In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance. PMID:26601218

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2.

PubMed

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A; Mertelj, Tomaz; Mihailovic, Dragan

2015-07-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a "hidden" (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a "Devil's staircase." In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance.

Efficient barrier for charge injection in polyethylene by silver nanoparticles/plasma polymer stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milliere, L.; Makasheva, K., E-mail: kremena.makasheva@laplace.univ-tlse.fr; Laurent, C.

2014-09-22

Charge injection from a metal/insulator contact is a process promoting the formation of space charge in polymeric insulation largely used in thick layers in high voltage equipment. The internal charge perturbs the field distribution and can lead to catastrophic failure either through its electrostatic effects or through energetic processes initiated under charge recombination and/or hot electrons effects. Injection is still ill-described in polymeric insulation due to the complexity of the contact between the polymer chains and the electrodes. Barrier heights derived from the metal work function and the polymer electronic affinity do not provide a good description of the measurementsmore » [Taleb et al., IEEE Trans. Dielectr. Electr. Insul. 20, 311–320 (2013)]. Considering the difficulty to describe the contact properties and the need to prevent charge injection in polymers for high voltage applications, we developed an alternative approach by tailoring the interface properties by the silver nanoparticles (AgNPs)/plasma polymer stack, deposited on the polymer film. Due to their small size, the AgNPs, covered by a very thin film of plasma polymer, act as deep traps for the injected charges thereby stabilizing the interface from the point of view of charge injection. After a quick description of the method for elaborating the nanostructured layer near the contact, it is demonstrated how the AgNPs/plasma polymer stack effectively prevents, in a spectacular way, the formation of bulk space charge.« less

Breakdown characteristics of SF6/N2 in severely non-uniform electric fields at low temperatures

NASA Astrophysics Data System (ADS)

Wang, Y.; Gao, Z. W.; Li, G. X.; Zhu, X. C.; Yu, C. L.; Liang, J. Q.; Li, L.

2018-01-01

SF6 has good electrical insulating properties, which is widely used as an insulating medium of GIS, GIL and other electrical equipment. However, the reliability of electrical equipments´ insulated gas is greatly challenged in cold areas, since SF6 more readily liquefies. To solve the problem, SF6 can be mixed with N2 to maintain the insulating properties, and reduce its liquefaction temperature. Such practice has certain application prospect. In this paper, a breakdown experimental platform was built to study the insulating property of SF6/N2 at low temperature, wherein the temperature of the platform can be adjusted. A severely non-uniform electric field was generated by a rod-plate electrode. The breakdown characteristics of SF6/N2 with different mixing proportions at low pressures and low temperatures were measured. The result showed that the mixed gas was not liquefied within the temperature range. Temperature had insignificant influence on the insulating property thereof. The result in the paper has certain guiding significance for applying SF6/N2 mixed gas in high latitude areas.

Coaxial Electric Heaters

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Savchenkov, Anatoliy; Maleki, Lute

2008-01-01

Coaxial electric heaters have been conceived for use in highly sensitive instruments in which there are requirements for compact heaters but stray magnetic fields associated with heater electric currents would adversely affect operation. Such instruments include atomic clocks and magnetometers that utilize heated atomic-sample cells, wherein stray magnetic fields at picotesla levels could introduce systematic errors into instrument readings. A coaxial electric heater is essentially an axisymmetric coaxial cable, the outer conductor of which is deliberately made highly electrically resistive so that it can serve as a heating element. As in the cases of other axisymmetric coaxial cables, the equal magnitude electric currents flowing in opposite directions along the inner and outer conductors give rise to zero net magnetic field outside the outer conductor. Hence, a coaxial electric heater can be placed near an atomic-sample cell or other sensitive device. A coaxial electric heater can be fabricated from an insulated copper wire, the copper core of which serves as the inner conductor. For example, in one approach, the insulated wire is dipped in a colloidal graphite emulsion, then the emulsion-coated wire is dried to form a thin, uniform, highly electrically resistive film that serves as the outer conductor. Then the film is coated with a protective layer of high-temperature epoxy except at the end to be electrically connected to the power supply. Next, the insulation is stripped from the wire at that end. Finally, electrical leads from the heater power supply are attached to the exposed portions of the wire and the resistive film. The resistance of the graphite film can be tailored via its thickness. Alternatively, the film can be made from an electrically conductive paint, other than a colloidal graphite emulsion, chosen to impart the desired resistance. Yet another alternative is to tailor the resistance of a graphite film by exploiting the fact that its resistance can be changed permanently within about 10 percent by heating it to a temperature above 300 C. A coaxial heater, with electrical leads attached, that has been bent into an almost full circle for edge heating of a circular window is shown. (In the specific application, there is a requirement for a heated cell window, through which an optical beam enters the cell.)

Directional gamma detector

DOEpatents

LeVert, Francis E.; Cox, Samson A.

1981-01-01

An improved directional gamma radiation detector has a collector sandwiched etween two layers of insulation of varying thicknesses. The collector and insulation layers are contained within an evacuated casing, or emitter, which releases electrons upon exposure to gamma radiation. Delayed electrons and electrons entering the collector at oblique angles are attenuated as they pass through the insulation layers on route to the collector.

Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

NASA Astrophysics Data System (ADS)

Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

2003-10-01

We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

Thermal Analysis and Design of Multi-layer Insulation for Re-entry Aerodynamic Heating

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran

2001-01-01

The combined radiation/conduction heat transfer in high-temperature multi-layer insulations was modeled using a finite volume numerical model. The numerical model was validated by comparison with steady-state effective thermal conductivity measurements, and by transient thermal tests simulating re-entry aerodynamic heating conditions. A design of experiments technique was used to investigate optimum design of multi-layer insulations for re-entry aerodynamic heating. It was found that use of 2 mm foil spacing and locating the foils near the hot boundary with the top foil 2 mm away from the hot boundary resulted in the most effective insulation design. A 76.2 mm thick multi-layer insulation using 1, 4, or 16 foils resulted in 2.9, 7.2, or 22.2 percent mass per unit area savings compared to a fibrous insulation sample at the same thickness, respectively.

Double layered tailorable advanced blanket insulation

NASA Technical Reports Server (NTRS)

Falstrup, D.

1983-01-01

An advanced flexible reusable surface insulation material for future space shuttle flights was investigated. A conventional fly shuttle loom with special modifications to weave an integral double layer triangular core fabric from quartz yarn was used. Two types of insulating material were inserted into the cells of the fabric, and a procedure to accomplish this was developed. The program is follow up of a program in which single layer rectangular cell core fabrics are woven and a single type of insulating material was inserted into the cells.

Quantum cascade lasers with Y2O3 insulation layer operating at 8.1 µm.

PubMed

Kang, JoonHyun; Yang, Hyun-Duk; Joo, Beom Soo; Park, Joon-Suh; Lee, Song-Ee; Jeong, Shinyoung; Kyhm, Jihoon; Han, Moonsup; Song, Jin Dong; Han, Il Ki

2017-08-07

SiO 2 is a commonly used insulation layer for QCLs but has high absorption peak around 8 to 10 µm. Instead of SiO 2 , we used Y 2 O 3 as an insulation layer for DC-QCL and successfully demonstrated lasing operation at the wavelength around 8.1 µm. We also showed 2D numerical analysis on the absorption coefficient of our DC-QCL structure with various parameters such as insulating materials, waveguide width, and mesa angle.

Electric Field and Current Density Performance Analysis of Sf6, C4f8 and CO2 Gases As An Insulation

NASA Astrophysics Data System (ADS)

Mazli, Ahmad Danial Ahmad; Jamail, Nor Akmal Mohd; Azlin Othman, Nordiana

2017-08-01

SF6 gases are not only widely used as an insulating component in electric power industry but also as an arc extinguishing performance in high voltage (HV) gas-insulated circuit breaker (GCB). SF6 gases is generally used in the production of semiconductor materials and devices. Though these gasses is widely used in many application, the presences of temperature hotspot in the insulations may affect the insulation characteristics particularly electric field and current density. Therefore, it is important to determine the relationship between electric field and current density of gasses used in the insulator in the presence of hotspot. In this paper, three types of gases in particular Sulphur Hexafluoride (SF6), Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2) was used in the insulator for gas insulation with the presence of two hotspots. These two hotspost were detected by referring the rising temperature in the insulator which are 1000 and 2000 Kelvin temperature for hotspot 1 and hotspot 2, respectively. From the simulation results, it can be concluded that Sulphur Hexafluoride (SF6) is the best choice for gas insulation since it had the lowest current density and electric field compared to Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2). It is observed that the maximum current density and electric field for SF6 during normal condition are 358.94 × 103 V/m and 0.643 × 109 A/m2, respectively. Meanwhile, during temperature rising at hotspot 1 and hotspot 2, SF6 also had lowest current density and electric field compared to the other gasses where the results for Emax and Jmax at hotspot 1 are 322.34 × 103 V/m and 1.934 × 109 A/m2, respectively; While, Emax and Jmax at hotspot 2 are 259.77× 103 V/m and 2.824 × 109 A/m2. The results of this analysis can be used to find the best choices of gas that can be used in the insulator.

A real-time insulation detection method for battery packs used in electric vehicles

NASA Astrophysics Data System (ADS)

Tian, Jiaqiang; Wang, Yujie; Yang, Duo; Zhang, Xu; Chen, Zonghai

2018-05-01

Due to the energy crisis and environmental pollution, electric vehicles have become more and more popular. Compared to traditional fuel vehicles, the electric vehicles are integrated with more high-voltage components, which have potential security risks of insulation. The insulation resistance between the chassis and the direct current bus of the battery pack is easily affected by factors such as temperature, humidity and vibration. In order to ensure the safe and reliable operation of the electric vehicles, it is necessary to detect the insulation resistance of the battery pack. This paper proposes an insulation detection scheme based on low-frequency signal injection method. Considering the insulation detector which can be easily affected by noises, the algorithm based on Kalman filter is proposed. Moreover, the battery pack is always in the states of charging and discharging during driving, which will lead to frequent changes in the voltage of the battery pack and affect the estimation accuracy of insulation detector. Therefore the recursive least squares algorithm is adopted to solve the problem that the detection results of insulation detector mutate with the voltage of the battery pack. The performance of the proposed method is verified by dynamic and static experiments.

Analytical investigation of thermal barrier coatings for advanced power generation combustion turbines

NASA Technical Reports Server (NTRS)

Amos, D. J.

1977-01-01

An analytical evaluation was conducted to determine quantitatively the improvement potential in cycle efficiency and cost of electricity made possible by the introduction of thermal barrier coatings to power generation combustion turbine systems. The thermal barrier system, a metallic bond coat and yttria stabilized zirconia outer layer applied by plasma spray techniques, acts as a heat insulator to provide substantial metal temperature reductions below that of the exposed thermal barrier surface. The study results show the thermal barrier to be a potentially attractive means for improving performance and reducing cost of electricity for the simple, recuperated, and combined cycles evaluated.

Lightweight Thermal Insulation for a Liquid-Oxygen Tank

NASA Technical Reports Server (NTRS)

Willen, G. Scott; Lock, Jennifer; Nieczkoski, Steve

2005-01-01

A proposed lightweight, reusable thermal-insulation blanket has been designed for application to a tank containing liquid oxygen, in place of a non-reusable spray-on insulating foam. The blanket would be of the multilayer-insulation (MLI) type and equipped with a pressure-regulated nitrogen purge system. The blanket would contain 16 layers in two 8-layer sub-blankets. Double-aluminized polyimide 0.3 mil (.0.008 mm) thick was selected as a reflective shield material because of its compatibility with oxygen and its ability to withstand ionizing radiation and high temperature. The inner and outer sub-blanket layers, 1 mil (approximately equals 0.025 mm) and 3 mils (approximately equals 0.076 mm) thick, respectively, would be made of the double-aluminized polyimide reinforced with aramid. The inner and outer layers would provide structural support for the more fragile layers between them and would bear the insulation-to-tank attachment loads. The layers would be spaced apart by lightweight, low-thermal-conductance netting made from polyethylene terephthalate.

Crossover from Incoherent to Coherent Phonon Scattering in Epitaxial Oxide Superlattices

DTIC Science & Technology

2013-12-08

function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides 1. REPORT DATE (DD-MM-YYYY) 4. TITLE...synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two...a function of interface density. Wedo so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the

Investigation on quench initiation and propagation characteristics of GdBCO coil co-wound with a stainless steel tape as turn-to-turn metallic insulation.

PubMed

Kim, Y G; Song, J B; Choi, Y H; Yang, D G; Kim, S G; Lee, H G

2016-11-01

This paper investigates the quench initiation and propagation characteristics of a metallic insulation (MI) coil by conducting thermal quench tests for a GdBCO single-pancake coil co-wound with a stainless steel tape as the turn-to-turn MI. The test results confirmed that the MI coil exhibited superior thermal and electrical stabilities compared to the conventional coils co-wound with organic insulation material because the operating current could flow along the radial direction due to the existence of a turn-to-turn contact when a local hot spot was generated. The results of the quench test at a heater current (I h ) of 12, 13, and 14 A indicate that the MI coil possesses a self-protecting characteristic resulting from the "current bypass" through the turn-to-turn contact. However, the test coil was not self-protecting at I h = 15 A because the Joule heat energy generated by the radial current flow was not completely dissipated due to the characteristic resistance of the metallic insulation tape and the non-superconducting materials, including the substrate, stabilizer, and buffer layers within the high-temperature superconductor (HTS) tape. Even though the MI coil possesses superior thermal and electrical stability relative to those of conventional HTS coils co-wound with an organic material as turn-to-turn insulation, it is essential to consider the critical role of the Joule heat energy resulting from the operating current and stored magnetic energy as well as the characteristic resistances in order to further develop self-protective 2G HTS magnets.

Insulation detection of electric vehicle batteries

NASA Astrophysics Data System (ADS)

Dai, Qiqi; Zhu, Zhongwen; Huang, Denggao; Du, Mingxing; Wei, Kexin

2018-06-01

In this paper, an electric vehicle insulation detection method with single side switching fixed resistance is designed, and the hardware and software design of the system are given. The experiment proves that the insulation detection system can detect the insulation resistance in a wide range of resistance values, and accurately report the fault level. This system can effectively monitor the insulation fault between the car body and the high voltage line and avoid the passengers from being injured.

Designing Predictive Diagnose Method for Insulation Resistance Degradation of the Electrical Power Cables from Neutral Insulated Power Networks

NASA Astrophysics Data System (ADS)

Dobra, R.; Pasculescu, D.; Risteiu, M.; Buica, G.; Jevremović, V.

2017-06-01

This paper describe some possibilities to minimize voltages switching-off risks from the mining power networks, in case of insulated resistance faults by using a predictive diagnose method. The cables from the neutral insulated power networks (underground mining) are designed to provide a flexible electrical connection between portable or mobile equipment and a point of supply, including main feeder cable for continuous miners, pump cable, and power supply cable. An electronic protection for insulated resistance of mining power cables can be made using this predictive strategy. The main role of electronic relays for insulation resistance degradation of the electrical power cables, from neutral insulated power networks, is to provide a permanent measurement of the insulated resistance between phases and ground, in order to switch-off voltage when the resistance value is below a standard value. The automat system of protection is able to signalize the failure and the human operator will be early informed about the switch-off power and will have time to take proper measures to fix the failure. This logic for fast and automat switch-off voltage without aprioristic announcement is suitable for the electrical installations, realizing so a protection against fires and explosion. It is presented an algorithm and an anticipative relay for insulated resistance control from three-phase low voltage installations with insulated neutral connection.

Gas insulated transmission line having low inductance intercalated sheath

DOEpatents

Cookson, Alan H.

1978-01-01

A gas insulated transmission line including an outer sheath, an inner conductor disposed within the outer sheath, and an insulating gas between the inner conductor and the outer sheath. The outer sheath comprises an insulating tube having first and second ends, and having interior and exterior surfaces. A first electrically conducting foil is secured to the interior surface of the insulating tube, is spirally wound from one tube end to the second tube end, and has a plurality of overlapping turns. A second electrically conducting foil is secured to the exterior surface of the insulating tube, and is spirally wound in the opposite direction from the first electrically conducting foil. By winding the foils in opposite directions, the inductances within the intercalated sheath will cancel each other out.

Aluminum nitride insulating films for MOSFET devices

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Maserjian, J.

1972-01-01

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

Electrochemical removal of material from metallic work

DOEpatents

Csakvary, Tibor; Fromson, Robert E.

1980-05-13

Deburring, polishing, surface forming and the like are carried out by electrochemical machining with conformable electrode means including an electrically conducting and an insulating web. The surface of the work to be processed is covered by a deformable electrically insulating web or cloth which is perforated and conforms with the work. The web is covered by a deformable perforated electrically conducting screen electrode which also conforms with, and is insulated from, the work by the insulating web. An electrolyte is conducted through the electrode and insulating web and along the work through a perforated elastic member which engages the electrode under pressure pressing the electrode and web against the work. High current under low voltage is conducted betwen the electrode and work through the insulator, removing material from the work. Under the pressure of the elastic member, the electrode and insulator continue to conform with the work and the spacing between the electrode and work is maintained constant.

Transport studies of mesoscopic and magnetic topological insulators

NASA Astrophysics Data System (ADS)

Kandala, Abhinav

Topological Insulators (TI) are a novel class of materials that are ideally insulating in the bulk, but have gapless, metallic states at the surface. These surface states have very exciting properties such as suppressed backscattering and spin-momentum locking, which are of great interest for research efforts towards dissipation-less electronics and spintronics. The popular thermo-electrics from the Bi chalcogenide family -- Bi2Se3 and Bi 2Te3 -- have been experimentally demonstrated to be promising candidate TI materials, and form the chosen material system for this dissertation research. The first part of this dissertation research focuses on low temperature magneto-transport measurements of mesoscopic topological insulator devices (Chapter 3). The top-down patterning of epitaxial thin films of Bi2Se 3 and Bi2Te3 (that are plagued with bulk conduction) is motivated, in part, by an effort to enhance the surface-to-volume ratio in mesoscopic channels. At cryogenic temperatures, transport measurements of these devices reveal periodic conductance fluctuations in straight channel devices, despite the lack of any explicit patterning of the TI film into a ring or a loop. A careful analysis of the surface morphology and comparison with the transport data then demonstrate that scattering off the edges of triangular plateaus at the surface leads to the creation of Aharonov-Bohm electronic orbits responsible for the periodicity. Another major focus of this dissertation work is on combining topological insulators with magnetism. This has been shown to open a gap in the surface states leading to possibilities of magnetic "gating" and the realization of dissipation-less transport at zero-field, amongst several other exotic quantum phenomena. In this dissertation, I present two different schemes for probing these effects in electrical transport devices -- interfacing with insulating ferromagnets (Chapter 4) and bulk magnetic doping (Chapter 5). In Chapter 4, I shall present the integration of GdN with Bi2Se 3 thin films. Careful structural, magnetic and electrical characterization of the heterostructures is employed to confirm that the magnetic species is solely restricted to the surface, and that the ferromagnetic GdN layer to be insulating, ensuring current flow solely through the TI layer. We also devise a novel device geometry that enables direct comparison of the magneto-transport properties of TI films with and without proximate magnetism, all, in a single device. A comparative study of weak anti-localization suggested that the overlying GdN suppressed quantum interference in the top surface state. In our second generation heterostructure devices, GdN is interfaced with low-carrier density, gate-tunable thin films of (Bi,Sb)2Te3 grown on SrTiO 3 substrates. These devices enable us to map out the comparison of magneto-transport, as the chemical potential is tuned from the bulk conduction band into the bulk valence band. In a second approach to study the effects of magnetism on TI's, I shall present, in Chapter 5, our results from magnetic doping of (Bi,Sb) 2Te3 thin films with Cr -- a system that was recently demonstrated to be a Quantum Anomalous Hall (QAH) insulator. In a Cr-rich regime, a highly insulating, high Curie temperature ferromagnetic phase is achieved. However, a careful, iterative process of tuning the composition of this complex alloy enabled access to the QAHE regime, with the observation of near dissipation-less transport and perfect Hall quantization at zero external field. Furthermore, we demonstrate a field tilt driven crossover between a quantum anomalous Hall phase and a gapless, ferromagnetic TI phase. This crossover manifests itself in an electrically tunable, giant anisotropic magneto-resistance effect that we employ as a quantitative probe of edge transport in this system.

Self-cooling mono-container fuel cell generators and power plants using an array of such generators

DOEpatents

Gillett, James E.; Dederer, Jeffrey T.; Zafred, Paolo R.

1998-01-01

A mono-container fuel cell generator (10) contains a layer of interior insulation (14), a layer of exterior insulation (16) and a single housing (20) between the insulation layers, where fuel cells, containing electrodes and electrolyte, are surrounded by the interior insulation (14) in the interior (12) of the generator, and the generator is capable of operating at temperatures over about 650.degree. C., where the combination of interior and exterior insulation layers have the ability to control the temperature in the housing (20) below the degradation temperature of the housing material. The housing can also contain integral cooling ducts, and a plurality of these generators can be positioned next to each other to provide a power block array with interior cooling.

Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Shu, G. J.; Liou, S. C.; Karna, S. K.; Sankar, R.; Hayashi, M.; Chou, F. C.

2018-04-01

The layered narrow-band-gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling, which has been identified both as a good candidate for a thermoelectric material with high thermoelectric figure of merit (Z T ) and as a topological insulator of the Z2 type with a gapless surface band in a Dirac-cone shape. The existence of a conjugated π -bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model with valence electrons distributed in the hybridized orbitals. Supporting experimental evidence of a two-dimensional (2D) conjugated π -bond system on each quintuple layer of Bi2Se3 is provided using electron energy-loss spectroscopy and electron density mapping through inverse Fourier transform of x-ray diffraction data. Quantum chemistry calculations support the π -bond existence between partially filled 4 pz orbitals of Se via side-to-side orbital overlap positively. The conjugated π -bond system on the surface of each quintuple Bi2Se3 layer is proposed to be similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted to be coming from the antiferroelectrically ordered effective electric dipoles, which are constructed with π -bond trimer pairs on Se layers across the vdW gap of minimized Coulomb repulsion.

Insulator coating for high temperature alloys method for producing insulator coating for high temperature alloys

DOEpatents

Park, J.H.

1998-06-23

A method for fabricating an electrically insulating coating on a surface is disclosed comprising coating the surface with a metal, and reacting the metal coated surface with a nonmetal so as to create a film on the metal-coated surface. Alternatively, the invention provides for a method for producing a noncorrosive, electrically insulating coating on a surface saturated with a nonmetal comprising supplying a molten fluid, dissolving a metal in the molten fluid to create a mixture, and contacting the mixture with the saturated surface. Lastly, the invention provides an electrically insulative coating comprising an underlying structural substrate coated with an oxide or nitride compound. 2 figs.

Infinite charge mobility in muscovite at 300 K

NASA Astrophysics Data System (ADS)

Russell, F. Michael; Archilla, Juan F. R.; Frutos, Fabian; Medina-Carrasco, Santiago

2017-11-01

Evidence is presented for infinite charge mobility in natural crystals of muscovite mica at room temperature. Muscovite has a basic layered structure containing a flat monatomic sheet of potassium sandwiched between mirror silicate layers. It is an excellent electrical insulator. Studies of defects in muscovite crystals indicated that positive charge could propagate over great distances along atomic chains in the potassium sheets in the absence of an applied electric potential. The charge moved in association with anharmonic lattice excitations that moved at about sonic speed and created by nuclear recoil of the radioactive isotope 40K. This was verified by measuring currents passing through crystals when irradiated with energetic alpha particles at room temperature. The charge propagated more than 1000 times the range of the alpha particles of average energy and 250 times the range of channelling particles of maximum energy. The range is limited only by size of the crystal.

Dielectric properties of transformer paper impregnated by mineral oil based magnetic fluid

NASA Astrophysics Data System (ADS)

Timko, M.; Kopčanský, P.; Marton, K.; Tomčo, L.; Koneracká, M.

2010-01-01

The influence of combined magnetic and electric field on permittivity of transformer paper used in power transformers was observed. Transformer paper was impregnated by pure transformer oil ITO 100 and magnetic fluids based on transformer oil ITO 100 with different concentrations of magnetite nanoparticles. The measurements were carried out with help of high precision capacitance bridge. The electric intensity between circular planar electrodes was in the region of weak electric field (E > 106 V/m). The increase of electric permittivity of transformer paper impregnated by magnetic fluid opposite pure transformer paper was observed. The experiments showed that permittivity of insulator system consisting of pure transformer paper and impregnated transformer paper naturally depends on number of paper layers. The magnetodielectric effect was found to be dependent on magnetite nanoparticles concentration in magnetic fluids.

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Multilayer insulation blanket, fabricating apparatus and method

DOEpatents

Gonczy, John D.; Niemann, Ralph C.; Boroski, William N.

1992-01-01

An improved multilayer insulation blanket for insulating cryogenic structures operating at very low temperatures is disclosed. An apparatus and method for fabricating the improved blanket are also disclosed. In the improved blanket, each successive layer of insulating material is greater in length and width than the preceding layer so as to accommodate thermal contraction of the layers closest to the cryogenic structure. The fabricating apparatus has a rotatable cylindrical mandrel having an outer surface of fixed radius that is substantially arcuate, preferably convex, in cross-section. The method of fabricating the improved blanket comprises (a) winding a continuous sheet of thermally reflective material around the circumference of the mandrel to form multiple layers, (b) binding the layers along two lines substantially parallel to the edges of the circumference of the mandrel, (c) cutting the layers along a line parallel to the axle of the mandrel, and (d) removing the bound layers from the mandrel.

Method of fabricating a multilayer insulation blanket

DOEpatents

Gonczy, John D.; Niemann, Ralph C.; Boroski, William N.

1993-01-01

An improved multilayer insulation blanket for insulating cryogenic structures operating at very low temperatures is disclosed. An apparatus and method for fabricating the improved blanket are also disclosed. In the improved blanket, each successive layer of insulating material is greater in length and width than the preceding layer so as to accommodate thermal contraction of the layers closest to the cryogenic structure. The fabricating apparatus has a rotatable cylindrical mandrel having an outer surface of fixed radius that is substantially arcuate, preferably convex, in cross-section. The method of fabricating the improved blanket comprises (a) winding a continuous sheet of thermally reflective material around the circumference of the mandrel to form multiple layers, (b) binding the layers along two lines substantially parallel to the edges of the circumference of the mandrel, (c) cutting the layers along a line parallel to the axle of the mandrel, and (d) removing the bound layers from the mandrel.

Method of fabricating a multilayer insulation blanket

DOEpatents

Gonczy, J.D.; Niemann, R.C.; Boroski, W.N.

1993-07-06

An improved multilayer insulation blanket for insulating cryogenic structures operating at very low temperatures is disclosed. An apparatus and method for fabricating the improved blanket are also disclosed. In the improved blanket, each successive layer of insulating material is greater in length and width than the preceding layer so as to accommodate thermal contraction of the layers closest to the cryogenic structure. The fabricating apparatus has a rotatable cylindrical mandrel having an outer surface of fixed radius that is substantially arcuate, preferably convex, in cross-section. The method of fabricating the improved blanket comprises (a) winding a continuous sheet of thermally reflective material around the circumference of the mandrel to form multiple layers, (b) binding the layers along two lines substantially parallel to the edges of the circumference of the mandrel, (c) cutting the layers along a line parallel to the axle of the mandrel, and (d) removing the bound layers from the mandrel.

Multilayer insulation blanket, fabricating apparatus and method

DOEpatents

Gonczy, J.D.; Niemann, R.C.; Boroski, W.N.

1992-09-01

An improved multilayer insulation blanket for insulating cryogenic structures operating at very low temperatures is disclosed. An apparatus and method for fabricating the improved blanket are also disclosed. In the improved blanket, each successive layer of insulating material is greater in length and width than the preceding layer so as to accommodate thermal contraction of the layers closest to the cryogenic structure. The fabricating apparatus has a rotatable cylindrical mandrel having an outer surface of fixed radius that is substantially arcuate, preferably convex, in cross-section. The method of fabricating the improved blanket comprises (a) winding a continuous sheet of thermally reflective material around the circumference of the mandrel to form multiple layers, (b) binding the layers along two lines substantially parallel to the edges of the circumference of the mandrel, (c) cutting the layers along a line parallel to the axle of the mandrel, and (d) removing the bound layers from the mandrel. 7 figs.

Characterization of dielectric properties of nanocellulose from wood and algae for electrical insulator applications.

PubMed

Le Bras, David; Strømme, Maria; Mihranyan, Albert

2015-05-07

Cellulose is one of the oldest electrically insulating materials used in oil-filled high-power transformers and cables. However, reports on the dielectric properties of nanocellulose for electrical insulator applications are scarce. The aim of this study was to characterize the dielectric properties of two nanocellulose types from wood, viz., nanofibrillated cellulose (NFC), and algae, viz., Cladophora cellulose, for electrical insulator applications. The cellulose materials were characterized with X-ray diffraction, nitrogen gas and moisture sorption isotherms, helium pycnometry, mechanical testing, and dielectric spectroscopy at various relative humidities. The algae nanocellulose sample was more crystalline and had a lower moisture sorption capacity at low and moderate relative humidities, compared to NFC. On the other hand, it was much more porous, which resulted in lower strength and higher dielectric loss than for NFC. It is concluded that the solid-state properties of nanocellulose may have a substantial impact on the dielectric properties of electrical insulator applications.

30 CFR 7.402 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... wires not insulated from one another, suitable for carrying an electric current. Electric Cable. An assembly of one or more insulated conductors of electric current under a common or integral jacket. A cable... the primary electric current or power is transmitted. Signaling Cable. A fiber optic cable, or a cable...

30 CFR 7.402 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... wires not insulated from one another, suitable for carrying an electric current. Electric Cable. An assembly of one or more insulated conductors of electric current under a common or integral jacket. A cable... the primary electric current or power is transmitted. Signaling Cable. A fiber optic cable, or a cable...

30 CFR 7.402 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... wires not insulated from one another, suitable for carrying an electric current. Electric Cable. An assembly of one or more insulated conductors of electric current under a common or integral jacket. A cable... the primary electric current or power is transmitted. Signaling Cable. A fiber optic cable, or a cable...

Alternator insulation evaluation tests

NASA Technical Reports Server (NTRS)

Penn, W. B.; Schaefer, R. F.; Balke, R. L.

1972-01-01

Tests were conducted to predict the remaining electrical insulation life of a 60 KW homopolar inductor alternator following completion of NASA turbo-alternator endurance tests for SNAP-8 space electrical power systems application. The insulation quality was established for two alternators following completion of these tests. A step-temperature aging test procedure was developed for insulation life prediction and applied to one of the two alternators. Armature winding insulation life of over 80,000 hours for an average winding temperature of 248 degrees C was predicted using the developed procedure.

A test and instrumentation system for the investigation of degradation of electrical insulating materials

NASA Technical Reports Server (NTRS)

1982-01-01

The basic test methods of aging and deterioration mechanisms of electrical insulating materials are discussed. A comprehensive test system developed to study the degradation process is described. This system is completely checked, and calibrated with a few insulating material samples.

The characteristics of electrical trees in the inner and outer layers of different voltage rating XLPE cable insulation

NASA Astrophysics Data System (ADS)

Xie, Ansheng; Li, Shengtao; Zheng, Xiaoquan; Chen, George

2009-06-01

The statistical initiation and propagation characteristics of electrical trees in cross-linked polyethylene (XLPE) cables with different voltage ratings from 66 to 500 kV were investigated under a constant test voltage of 50 Hz/7 kV (the 66 kV rating cable is from UK, the others from China). It was found that the characteristics of electrical trees in the inner region of 66 kV cable insulation differed considerably from those in the outer region under the same test conditions; however, no significant differences appeared in the 110 kV rating cable and above. The initiation time of electrical trees in both the inner and the outer regions of the 66 kV cable is much shorter than that in higher voltage rating cables; in addition the growth rate of electrical trees in the 66 kV cable is much larger than that in the higher voltage rating cables. By using x-ray diffraction, differential scanning calorimetry and thermogravimetry methods, it was revealed that besides the extrusion process, the molecular weight of base polymer material and its distribution are the prime factors deciding the crystallization state. The crystallization state and the impurity content are responsible for the resistance to electrical trees. Furthermore, it was proposed that big spherulites will cooperate with high impurity content in enhancing the initiation and growth processes of electrical trees via the 'synergetic effect'. Finally, dense and small spherulites, high crystallinity, high purity level of base polymer material and super-clean production processes are desirable for higher voltage rating cables.

Suppression of insolation heating induced by electromagnetic scatteringdue to fine spheres

NASA Astrophysics Data System (ADS)

Horie, J.; Mikada, H.; Goto, T.; Takekawa, J.; Manaka, Y.; Taniguchi, K.; Ashida, Y.

2013-12-01

The 2011 off the Pacific coast of Tohoku Earthquake, i.e., the greatest earthquake in the Japanese history, and the successive disaster at the Fukushima Daiichi Nuclear Power Plant have caused a fatal electric power shortage problem in summer in 2011. It is of key importance to reduce electricity demand and to save the energy. About one third of the total electricity demand at the peak consumption in summer is for the air-conditioning in the household and office sectors in Japan. It is, therefore, necessary to think deliberately of the reduction of electric power demand for air-conditioning. In fact, the temperature of materials rises when they are exposed to the sunlight (insolation heating) in particular in summer and the air-conditioning would become necessary for restoring the comfort in insolated housings. The energy for the air-conditioning is spent to pump out the heat changed in the materials of the insolated housings and would be proportional to the temperature to lower down. It is, therefore, clear that the reduction of the energy for the air-conditioning would strongly depend on relaxation of temperature rise or the insulation of insolated materials. Insolation heating could be suppressed when the materials are coated with paint admixed with fine silica spheres (insulating paint). By coating buildings' walls and roofs with such paint, the temperature of interior rooms could be kept lower without air-conditioning. These insulation effects are well known and have been utilized in the past, but have hardly been analyzed theoretically yet. Theoretical analysis would greatly enhance the effects of the suppression of insolation heating. In preceding studies, Ohkawa et al.(2009; 2011) and Mikada et al.(2011) focused on the electromagnetic wave scattering induced by fine spheres and developed the analytical method using superposition of scattered waves from each sphere (the first Born approximation), and indicated that the size of the spheres is one of the parameters affecting the light intensity transmitted through the paint. However, the rigorous results, not using such approximation or considering other parameters than the size of spheres, are still unknown. Such rigorous solution is necessary to find the best structure of the paint for insulating phenomena. In this study, we consider fine spheres randomly distributed in a paint layer coating a material, and analyze its scattering characteristics using the Monte Carlo ray tracing method based on the Mie theory. Three layers (air, paint and iron) are first assumed and a number of photons incident on the paint layer. The optical paths of photons are successively traced. We use their ratio between the number of reflected and transmitted photons and their phases in order toestimate the intensity of near-infrared sunlight that reaches the material (transmission intensity). As a result, it is found that the sphere radius should be less than 0.5 μm and the refractive index of sphere is less than 1.45 if we want to decrease the transmission intensity to less than about 0.1. We conclude that the introduction of the Monte Carlo simulation has led us to a quantitative analysis of the insulation effects caused by electromagnetic scattering and to find the optimum size and material of spheres to be admixed with paint.

Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

NASA Astrophysics Data System (ADS)

Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

2018-05-01

Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

Mode structure of a quantum cascade laser

NASA Astrophysics Data System (ADS)

Bogdanov, A. A.; Suris, R. A.

2011-03-01

We analyze the mode structure of a quantum cascade laser (QCL) cavity considering the surface plasmon-polariton modes and familiar modes of hollow resonator jointly, within a single model. We present a comprehensive mode structure analysis of the laser cavity, varying its geometric parameters and free electron concentration inside cavity layers within a wide range. Our analysis covers, in particular, the cases of metal-insulator-metal and insulator-metal-insulator waveguides. We discuss the phenomenon of negative dispersion for eigenmodes in detail and explain the nature of this phenomenon. We specify a waveguide parameters domain in which negative dispersion exists. The mode structure of QCL cavity is considered in the case of the anisotropic electrical properties of the waveguide materials. We show that anisotropy of the waveguide core results in propagation of Langmuir modes that are degenerated in the case of the isotropic core. Comparative analysis of optical losses due to free carrier absorption is presented for different modes within the frequency range from terahertz to ultraviolet frequencies.

Ideology of a multiparametric system for estimating the insulation system of electric machines on the basis of absorption testing methods

NASA Astrophysics Data System (ADS)

Kislyakov, M. A.; Chernov, V. A.; Maksimkin, V. L.; Bozhin, Yu. M.

2017-12-01

The article deals with modern methods of monitoring the state and predicting the life of electric machines. In 50% of the cases of failure in the performance of electric machines is associated with insulation damage. As promising, nondestructive methods of control, methods based on the investigation of the processes of polarization occurring in insulating materials are proposed. To improve the accuracy of determining the state of insulation, a multiparametric approach is considered, which is a basis for the development of an expert system for estimating the state of health.

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator.

PubMed

Scheiderer, Philipp; Schmitt, Matthias; Gabel, Judith; Zapf, Michael; Stübinger, Martin; Schütz, Philipp; Dudy, Lenart; Schlueter, Christoph; Lee, Tien-Lin; Sing, Michael; Claessen, Ralph

2018-05-07

The Mott transistor is a paradigm for a new class of electronic devices-often referred to by the term Mottronics-which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO 3 grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO 3+ x thin films making it a promising channel material in future Mottronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Component for thermoelectric generator

DOEpatents

Purdy, David L.

1977-01-01

In a thermoelectric generator, a component comprises a ceramic insulator, having over limited areas thereof, each area corresponding to a terminal end of thermoelectric wires, a coating of a first metal which adheres to the insulator, and an electrical thermoelectric junction including a second metal which wets said first metal and adheres to said terminal ends but does not wet said insulator, and a cloth composed of electrically insulating threads interlaced with thermoelectric wires.

Dry and wet arc track propagation resistance testing

NASA Technical Reports Server (NTRS)

Beach, Rex

1995-01-01

The wet arc-propagation resistance test for wire insulation provides an assessment of the ability of an insulation to prevent damage in an electrical environment. Results of an arc-propagation test may vary slightly due to the method of arc initiation; therefore a standard test method must be selected to evaluate the general arc-propagation resistance characteristics of an insulation. This test method initiates an arc by dripping salt water over pre-damaged wires which creates a conductive path between the wires. The power supply, test current, circuit resistances, and other variables are optimized for testing 20 guage wires. The use of other wire sizes may require modifications to the test variables. The dry arc-propagation resistance test for wire insulation also provides an assessment of the ability of an insulation to prevent damage in an electrical arc environment. In service, electrical arcs may originate form a variety of factors including insulation deterioration, faulty installation, and chafing. Here too, a standard test method must be selected to evaluate the general arc-propagation resistance characteristics of an insulation. This test method initiates an arc with a vibrating blade. The test also evaluates the ability of the insulation to prevent further arc-propagation when the electrical arc is re-energized.

Towards Mott design by δ-doping of strongly correlated titanates

NASA Astrophysics Data System (ADS)

Lechermann, Frank; Obermeyer, Michael

2015-04-01

Doping the distorted-perovskite Mott insulators LaTiO3 and GdTiO3 with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge self-consistent combination of density functional theory with dynamical mean-field theory reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. An orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO2 layers. We find large differences in the scattering behavior within the latter. Breaking the spin symmetry in δ-doped GdTiO3 results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers that are coupled antiferromagnetically.

Heat insulating device for low temperature liquefied gas storage tank

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okamoto, T.; Nishimoto, T.; Sawada, K.

1978-05-02

Hitachi Shipbuilding and Engineering Co., Ltd.'s insulation method for spherical LNG containers solves various problems associated with insulating a sphere's three-dimensional curved surface; equalizing the thickness of the insulation, insulating the junctions between insulation blocks, and preventing seawater or LNG from penetrating the insulation barrier in the event of a rupture in the tank and ship's hull. The design incorporates a number of blocks or plates of rigid foam-insulating material bonded to the outer wall; seats for receiving pressing jigs for the bonding operation are secured to the outer wall in the joints between the insulating blocks. The joints aremore » filled with soft synthetic foam (embedding the seats), a moistureproof layer covers the insulating blocks and joints, and a waterproof material covers the moistureproof layer.« less

High-voltage electrical apparatus utilizing an insulating gas of sulfur hexafluoride and helium

DOEpatents

Wootton, Roy E.

1980-01-01

High-voltage electrical apparatus includes an outer housing at low potential, an inner electrode disposed within the outer housing at high potential with respect thereto, and support means for insulatably supporting the inner electrode within the outer housing. Conducting particles contaminate the interior of the outer housing, and an insulating gas electrically insulates the inner electrode from the outer housing even in the presence of the conducting particles. The insulating gas is comprised of sulfur hexafluoride at a partial pressure of from about 2.9 to about 3.4 atmospheres absolute, and helium at a partial pressure from about 1.1 to about 11.4 atmospheres absolute. The sulfur hexafluoride comprises between 20 and 65 volume percent of the insulating gas.

System and method for evaluating a wire conductor

DOEpatents

Panozzo, Edward; Parish, Harold

2013-10-22

A method of evaluating an electrically conductive wire segment having an insulated intermediate portion and non-insulated ends includes passing the insulated portion of the wire segment through an electrically conductive brush. According to the method, an electrical potential is established on the brush by a power source. The method also includes determining a value of electrical current that is conducted through the wire segment by the brush when the potential is established on the brush. The method additionally includes comparing the value of electrical current conducted through the wire segment with a predetermined current value to thereby evaluate the wire segment. A system for evaluating an electrically conductive wire segment is also disclosed.

Tunable inverse topological heterostructure utilizing ( B i 1 - x I n x ) 2 S e 3 and multichannel weak-antilocalization effect

DOE PAGES

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; ...

2016-03-10

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary themore » thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less

Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

PubMed

Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

2016-05-21

Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

High temperature insulation barrier composite

NASA Technical Reports Server (NTRS)

Onstott, Joseph W. (Inventor)

1989-01-01

A composite material suitable for providing insulation for the nozzle structure of the Space Shuttle and other similar surfaces is disclosed. The composite layer is comprised of an outer skin layer of nickel chromium and an interleaved inner region comprising a top layer of nickel chromium foil which acts as a primary convective shield. There are at least two layers of alumina batting adjacent to the layers of silicon carbide fabric. An additional layer of nickel chromium foil is used as a secondary convective shield. The composite is particularly advantageous for use as nozzle insulation because of its ability to withstand high reentry temperatures, its flexibility, oxidation resistance, low conductivity, and light weight.

Enhanced Electrical Resistivity after Rapid Cool of the Specimen in Layered Oxide LixCoO2

NASA Astrophysics Data System (ADS)

Miyoshi, K.; Manami, K.; Takeuchi, J.; Sasai, R.; Nishigori, S.

Measurements of electrical resistivity and DC magnetization for LixCoO2 (x=0.71 and 0.64) have been performed using single crystal specimens. It has been found that electrical resistivity measured after rapid cool of the specimen becomes larger compared with that after slow cool below the temperature TS∽155 K at which charge ordering of Co3+/Co4+(=2:1) occurs. The behavior can be understood considering that the charge ordering can be destroyed by Li ions which are in an amorphous state after rapid cool via the interlayer Coulomb interactions, and also that the disordered Co3+/Co4+ state becomes insulating, while the charge ordered state has a metallic electronic structure, as recently revealed by the scanning tunneling microscopy.

Contribution of ethylenetetrafluoroethylene (ETFE) insulation to the electrical performance of Riata® silicone leads having externalized conductors.

PubMed

Fischer, Avi; Klehn, Russell

2013-08-01

The insulation of St. Jude Medical Riata® leads contains a polytetrafluoroethylene (PTFE) liner, silicone tubing, and ethylenetetrafluoroethylene (ETFE) coating on individual cable conductors. ETFE has sufficient dielectric strength to assure electrical function. This investigation intended to analyze performance of leads with and without externalized conductors and with intact and breached ETFE. Testing was performed on ETFE-coated conductors to determine their ability to deliver high-voltage therapy. Tests were performed on samples under different conditions and current leakage was measured. A high-voltage test and a cyclic pulse test were performed, and the effect of lead modifications on the potential gradient from a high-voltage shock was used to determine functionality. Measurements from modified Riata® leads were compared with a control lead with all insulation and conducting elements intact. Current leakage for all conditions tested, was within the acceptance criteria for the high-voltage test and the cyclic pulse test. In conductors that underwent cyclic testing, the highest value of current leakage was within the limit of acceptability for both phases of the test. Testing of leads with externalized conductors and breached ETFE showed similar potential gradients compared with a control lead. Testing of ETFE-coated conductors following multiple preconditioning steps showed that ETFE serves as a redundant layer of insulation. In the event that the ETFE coating is breached, the potential gradient seen resulting from a high-voltage defibrillation shock was similar to a lead with no breach to the ETFE, even after 100 shocks.

Preparation and characterisation of crystalline tris(acetylacetonato)Fe(III) films grown on p-Si substrate for dielectric applications

NASA Astrophysics Data System (ADS)

Dakhel, A. A.; Ali-Mohamed, A. Y.

2007-02-01

Thin tris(acetylacetonato)iron(III) films were prepared by sublimation in vacuum on glass and p-Si substrates. Then comprehensive studies of X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, AC-conductivity, and dielectric permittivity as a function of frequency and temperature have been performed. The prepared films show a polycrystalline of orthorhombic structure. The optical absorption spectrum of the film was identical with that of the bulk powder layer. For electrical measurements of the complex as insulator, sample in form of metal insulator semiconductor (MIS) structure was prepared and characterised by the measurement of the capacitance and AC-conductance as a function of gate voltage. From those measurements, the state density Dit at insulator/semiconductor interface and the density of the fixed charges in the complex film were determined. It was found that Dit was of order 1010 eV-1/cm2 and the surface charge density in the insulator film was of order 1010 cm-2. The frequency dependence of the electrical conductivity and dielectric properties of MIS structures were studied at room temperature. It was observed that the experimental data follow the correlated barrier-hopping (CBH) model, from which the fundamental absorption edge, the cut off hopping distance, and other parameters of the model were determined. It was found that the capacitance of the complex increases as temperature increases. Generally, the present study shows that the tris(acetylacetonato)iron(III) films grown on p-Si is a promising candidate for low-k dielectric applications, it displays low-k value around 2.0.

Parylene-C passivation and effects on rectennas' wireless power transfer performance

NASA Astrophysics Data System (ADS)

Cooper, Camille; Eldridge, Keisharra; Kim, Min H.; Yoon, Hargsoon; Choi, Sang H.; Song, Kyo D.

2014-04-01

In this study, the effect of Parylene-C coated as a passivation layer on various rectennas is investigated in terms of their wireless power transfer performance. A passivation has been used for protection of rectenna circuits and their packaging in order for protection of the circuit elements and electrical insulation. Especially, wireless power receiving rectennas attached on sensors or on moving vehicles such as airship needs proper protection while they are exposed to harsh environment. In this research, a layer of Parylene-C thin film is used for passivation on rectennas and electromagnetic coupling by the coating is assessed by the measurement of receiving power levels. In this research, an electrochemical analysis method will also be introduced to measure the degree of water protection by a Parylene-C layer.

Highly condensed fluorinated methacrylate hybrid material for transparent low-kappa passivation layer in LCD-TFT.

PubMed

Oh, Ji-Hoon; Kwak, Seung-Yeon; Yang, Seung-Cheol; Bae, Byeong-Soo

2010-03-01

Photocurable and highly condensed fluorinated methacrylate oligosiloxane, with a low dielectric constant (kappa = 2.54), was prepared by a nonhydrolytic sol-gel condensation reaction. The oligosiloxane resin was then spin-coated, photocured, and thermally baked in order to fabricate a fluorinated methacrylate hybrid material (FM hybrimer) thin film. This study investigated the application of this FM hybrimer film as a low-kappa passivation layer in LCD-based thin film transistors (TFT). It was found that a dielectric constant as low as kappa = 2.54 could be obtained, without introducing pores in the dense FM hybrimer films. This study compares FM hybrimer film characteristics with those required for passivation layers in LCD-TFTs, including thermal stability, optical transmittance, hydrophobicity, gap fill, and planarization effects as well as electrical insulation.

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

PubMed Central

Lanza, Mario

2014-01-01

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. PMID:28788561

Electrical and magnetic properties of superconducting-insulating Pr-doped GdBa2Cu3O7-y

NASA Astrophysics Data System (ADS)

Yamani, Z.; Akhavan, M.

1997-10-01

An extensive study of magnetic, electrical transport, and structural properties of the normal and superconducting states of Gd1-xPrxBa2Cu3O7-y (GdPr-123) are presented. Ceramic compounds have been synthesized by the solid-state reaction technique, and characterized by x-ray-diffraction, scanning-electron-microscopy, thermogravimetric, and differential-thermal analyses. The superconducting transition temperature is reduced with increasing Pr content x in a nonlinear manner, in contrast to Abrikosov-Gor'kov pair-breaking theory. Magnetic susceptibility measurements show that the nominal Pr valence is 3.86+, independently of x. A metal-insulator transition is observed at xcr~0.45, similar to that in the oxygen-deficient RBa2Cu3O7-y (R-123) system. Based on this resemblance, we suggest that both Pr doping and oxygen deficiency act through the same mechanism. Hence, the environment surrounding the CuO2 layers is important to high-Tc superconductivity (HTSC). In this sense, HTSC cannot completely be a two-dimentional feature. A chain-plane-correlation effect is plausible.

Website malfunction: a case report highlighting the danger of using electrical insulating tape for buddy strapping

PubMed Central

Devitt, Brian Meldan; Baker, Joseph F; Fitzgerald, Eilis; McCarthy, Conor

2010-01-01

A case of injury to the third web space of the right hand of a rugby player, as a result of buddy strapping with electrical insulating tape of the little and ring finger, is presented. A deep laceration of the web space and distal palmar fascia resulted, necessitating wound exploration and repair. This case highlights the danger of using electrical insulating tape as a means to buddy strap fingers. PMID:22736733

Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

2016-02-01

Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

Characterization of 10,12-pentacosadiynoic acid Langmuir-Blodgett monolayers and their use in metal-insulator-metal tunnel devices.

PubMed

Sharma, Saumya; Khawaja, Mohamad; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2014-01-01

The characterization of Langmuir-Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal-insulator-metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension-area isotherms of polymeric and monomeric PDA. Langmuir-Blodgett (LB, vertical deposition) and Langmuir-Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current-voltage characteristics (I-V), and UV-vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current-voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni-PDA LB film-Ni structures.

Control of magnetism in Co by an electric field

NASA Astrophysics Data System (ADS)

Chiba, D.; Ono, T.

2013-05-01

In this paper, we review the recent experimental developments on electric-field switching of ferromagnetism in ultra-thin Co films. The application of an electric field changes the electron density at the surface of the Co film, which results in modulation of its Curie temperature. A capacitor structure consisting of a gate electrode, a solid-state dielectric insulator and a Co bottom electrode is used to observe the effect. To obtain a larger change in the electron density, we also fabricated an electric double-layer capacitor structure using an ionic liquid. A large change in the Curie temperature of ∼100 K across room temperature is achieved with this structure. The application of the electric field influences not only the Curie temperature but also the domain-wall motion. A change in the velocity of a domain wall prepared in a Co micro-wire of more than one order of magnitude is observed. Possible mechanisms to explain the above-mentioned electric-field effects in Co ultra-thin films are discussed.

Vacuum chamber for containing particle beams

DOEpatents

Harvey, A.

1985-11-26

A vacuum chamber for containing a charged particle beam in a rapidly changing magnetic environment comprises a ceramic pipe with conducting strips oriented along the longitudinal axis of the pipe and with circumferential conducting bands oriented perpendicular to the longitudinal axis but joined with a single longitudinal electrical connection. When both strips and bands are on the outside of the ceramic pipe, insulated from each other, a high-resistance conductive layer such as nickel can be coated on the inside of the pipe.

Cholesterol and myelin biogenesis.

PubMed

Saher, Gesine; Simons, Mikael

2010-01-01

Myelin consists of several layers of tightly compacted membranes wrapped around axons in the nervous system. The main function of myelin is to provide electrical insulation around the axon to ensure the rapid propagation of nerve conduction. As the myelinating glia terminally differentiates, they begin to produce myelin membranes on a remarkable scale. This membrane is unique in its composition being highly enriched in lipids, in particular galactosylceramide and cholesterol. In this review we will summarize the role of cholesterol in myelin biogenesis in the central and peripheral nervous system.

Electroless epitaxial etching for semiconductor applications

DOEpatents

McCarthy, Anthony M.

2002-01-01

A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)

NASA Astrophysics Data System (ADS)

Lüpke, Felix; Just, Sven; Bihlmayer, Gustav; Lanius, Martin; Luysberg, Martina; Doležal, Jiří; Neumann, Elmar; Cherepanov, Vasily; Ošt'ádal, Ivan; Mussler, Gregor; Grützmacher, Detlev; Voigtländer, Bert

2017-07-01

We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1 ×1 ) surface, we find Te to form a Te/Si(111)-(1 ×1 ) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1 ×1 ) interface conductivity of σ2D Te=2.6 (5 ) ×10-7S /□ , which is small compared to the typical conductivity of topological surface states.

Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores.

PubMed

Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

2013-01-11

Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al(2)O(3)) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al(2)O(3) layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al(2)O(3) using ALD.

Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

NASA Astrophysics Data System (ADS)

Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

2013-01-01

Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

Element for use in an inductive coupler for downhole drilling components

DOEpatents

Hall, David R.; Hall, Jr., H. Tracy; Pixton, David S.; Dahlgren, Scott; Fox, Joe; Sneddon, Cameron

2006-08-29

The present invention includes an element for use in an inductive coupler in a downhole component. The element includes a plurality of ductile, generally U-shaped leaves that are electrically conductive. The leaves are less than about 0.0625" thick and are separated by an electrically insulating material. These leaves are aligned so as to form a generally circular trough. The invention also includes an inductive coupler for use in downhole components, the inductive coupler including an annular housing having a recess with a magnetically conductive, electrically insulating (MCEI) element disposed in the recess. The MCEI element includes a plurality of segments where each segment further includes a plurality of ductile, generally U-shaped electrically conductive leaves. Each leaf is less than about 0.0625" thick and separated from the otherwise adjacent leaves by electrically insulating material. The segments and leaves are aligned so as to form a generally circular trough. The inductive coupler further includes an insulated conductor disposed within the generally circular trough. A polymer fills spaces between otherwise adjacent segments, the annular housing, insulated conductor, and further fills the circular trough.

The effect of adsorbates on the electrical stability of graphene studied by transient photocurrent spectroscopy

NASA Astrophysics Data System (ADS)

Kalkan, S. B.; Aydın, H.; Özkendir, D.; ćelebi, C.

2018-01-01

Adsorbate induced variations in the electrical conductivity of graphene layers with two different types of charge carriers are investigated by using the Transient Photocurrent Spectroscopy (TPS) measurement technique. In-vacuum TPS measurements taken for a duration of 5 ks revealed that the adsorption/desorption of atmospheric adsorbates leads to more than a 110% increment and a 45% decrement in the conductivity of epitaxial graphene (n-type) and chemical vapor deposition graphene (p-type) layers on semi-insulating silicon carbide (SiC) substrates, respectively. The graphene layers on SiC are encapsulated and passivated with a thin SiO2 film grown by the Pulsed Electron Deposition method. The measurements conducted for short periods and a few cycles showed that the encapsulation process completely suppresses the time dependent conductivity instability of graphene independent of its charge carrier type. The obtained results are used to construct an experimental model for identifying adsorbate related conductivity variations in graphene and also in other 2D materials with an inherently high surface-to-volume ratio.

Basic performance of a multilayer insulation system containing 20 to 160 layers. [thermal effectiveness of aluminized Mylar-silk net system

NASA Technical Reports Server (NTRS)

Stochl, R. J.

1974-01-01

An experimental investigation was conducted to determine the thermal effectiveness of an aluminized Mylar-silk net insulation system containing up to 160 layers. The experimentally measured heat flux was compared with results predicted by using (1) a previously developed semi-empirical equation and (2) an effective-thermal-conductivity value. All tests were conducted at a nominal hot-boundary temperature of 294 K (530 R) with liquid hydrogen as the heat sink. The experimental results show that the insulation performed as expected and that both the semi-empirical equation and effective thermal conductivity of a small number of layers were adequate in predicting the thermal performance of a large number of layers of insulation.

Low-cost laser diode array

DOEpatents

Freitas, B.L.; Skidmore, J.A.

1999-06-01

A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost. 19 figs.

Low-cost laser diode array

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

1999-01-01

A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost.

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

PubMed

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Flexible gas insulated transmission line having regions of reduced electric field

DOEpatents

Cookson, Alan H.; Fischer, William H.; Yoon, Kue H.; Meyer, Jeffry R.

1983-01-01

A gas insulated transmission line having radially flexible field control means for reducing the electric field along the periphery of the inner conductor at predetermined locations wherein the support insulators are located. The radially flexible field control means of the invention includes several structural variations of the inner conductor, wherein careful controlling of the length to depth of surface depressions produces regions of reduced electric field. Several embodiments of the invention dispose a flexible connector at the predetermined location along the inner conductor where the surface depressions that control the reduced electric field are located.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

MEMS for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Li, Lin; Zhang, Yangjian; San, Haisheng; Guo, Yinbiao; Chen, Xuyuan

2008-03-01

In this paper, a capacitive vibration-to-electrical energy harvester was designed. An integrated process flow for fabricating the designed capacitive harvester is presented. For overcoming the disadvantage of depending on external power source in capacitive energy harvester, two parallel electrodes with different work functions are used as the two electrodes of the capacitor to generate a build-in voltage for initially charging the capacitor. The device is a sandwich structure of silicon layer in two glass layers with area of about 1 cm2. The silicon structure is fabricated by using silicon-on-insulator (SOI) wafer. The glass wafers are anodic bonded on to both sides of the SOI wafer to create a vacuum sealed package.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Mechanical writing of n-type conductive layers on the SrTiO3 surface in nanoscale

PubMed Central

Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Li, Geng; Xie, Guanlin; Lai, Xubo; Ni, Jun; Zhang, Liuwan

2015-01-01

The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interactions of atomic force microscopy tip without applying external electric field. The conductivity of the layer is n-type, oxygen sensitive, and can be effectively tuned by the gate voltage. Hence, our findings have potential applications in oxide nano-circuits and oxygen sensors. PMID:26042679

Digital modulation of the nickel valence state in a cuprate-nickelate heterostructure

NASA Astrophysics Data System (ADS)

Wrobel, F.; Geisler, B.; Wang, Y.; Christiani, G.; Logvenov, G.; Bluschke, M.; Schierle, E.; van Aken, P. A.; Keimer, B.; Pentcheva, R.; Benckiser, E.

2018-03-01

Layer-by-layer oxide molecular-beam epitaxy has been used to synthesize cuprate-nickelate multilayer structures of composition (La2CuO4)m/LaO /(LaNiO3)n . In a combined experimental and theoretical study, we show that these structures allow a clean separation of dopant and doped layers. Specifically, the LaO layer separating cuprate and nickelate blocks provides an additional charge that, according to density-functional theory calculations, is predominantly accommodated in the interfacial nickelate layers. This is reflected in an elongation of bond distances and changes in valence state, as observed by scanning transmission electron microscopy and x-ray absorption spectroscopy. Moreover, the predicted charge disproportionation in the nickelate interface layers leads to a metal-to-insulator transition when the thickness is reduced to n =2 , as observed in electrical transport measurements. The results exemplify the perspectives of charge transfer in metal-oxide multilayers to induce doping without introducing chemical and structural disorder.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Demonstration of Hybrid Multilayer Insulation for Fixed Thickness Applications

NASA Astrophysics Data System (ADS)

Johnson, W. L.; Fesmire, J. E.; Heckle, K. W.

2015-12-01

Cryogenic multilayer insulation (MLI) systems provide both conductive and radiative thermal insulation performance. The use of radiation shields with low conductivity spacers in between are required. By varying the distance and types of the spacers between the radiation shields, the relative radiation and conduction heat transfers can be manipulated. However, in most systems, there is a fixed thickness or volume allocated to the insulation. To understand how various combinations of different multilayer insulation (MLI) systems work together and to further validate thermal models of hybrid MLI systems, test data are needed. The MLI systems include combinations of Load-Bearing MLI (LB-MLI) and traditional MLI (tMLI). To further simulate the space launch vehicle case wherein both ambient pressure and vacuum environments are addressed, different cold-side thermal insulation substrates were included for select tests. The basic hybrid construction consists of some number of layers of LB-MLI on the cold side of the insulation system followed by layers of tMLI on the warm side of the system. The advantages of LB-MLI on the cold side of the insulation blanket are that its low layer density (0.5 - 0.6 layer/mm) is better suited for lower temperature applications and is a structural component to support heat interception shields that may be placed within the blanket. The advantage of tMLI systems on the warm side is that radiation is more dominant than conduction at warmer temperatures, so that a higher layer density is desired (2 - 3 layer/mm) and less effort need be put into minimizing conduction heat transfer. Liquid nitrogen boiloff test data using a cylindrical calorimeter are presented along with analysis for spacecraft tank applications.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Field effect transistor with HfO2/Parylene-C bilayer hybrid gate insulator

NASA Astrophysics Data System (ADS)

Kumar, Neeraj; Kito, Ai; Inoue, Isao

2015-03-01

We have investigated the electric field control of the carrier density and the mobility at the surface of SrTiO3, a well known transition-metal oxide, in a field effect transistor (FET) geometry. We have used a Parylene-C (8 nm)/HfO2 (20 nm) double-layer gate insulator (GI), which can be a potential candidate for a solid state GI for the future Mott FETs. So far, only examples of the Mott FET used liquid electrolyte or ferroelectric oxides for the GI. However, possible electrochemical reaction at the interface causes damage to the surface of the Mott insulator. Thus, an alternative GI has been highly desired. We observed that even an ultra thin Parylene-C layer is effective for keeping the channel surface clean and free from oxygen vacancies. The 8 nm Parylene-C film has a relatively low resistance and consequentially its capacitance does not dominate the total capacitance of the Parylene-C/HfO2 GI. The breakdown gate voltage at 300 K is usually more than 10 V (~ 3.4 MV/cm). At gate voltage of 3 V the carrier density measured by the Hall effect is about 3 ×1013 cm-2, competent to cause the Mott transition. Moreover, the field effect mobility reaches in the range of 10 cm2/Vs indicating the Parylene-C passivated surface is actually very clean.

Self-assembly preparation of SiO2@Ni-Al layered double hydroxide composites and their enhanced electrorheological characteristics

PubMed Central

Ji, Xuqiang; Zhang, Wenling; Shan, Lei; Tian, Yu; Liu, Jingquan

2015-01-01

The core-shell structured SiO2@Ni-Al layered double hydroxide (LDH) composites were prepared via self-assembly of Ni-Al LDH on the surface of SiO2 spheres. Only coating a layer of ultrathin Ni-Al LDH sheet, the resulting SiO2@Ni-Al LDH composites exhibit significantly enhanced electrorheological (ER) characteristics compared to conventional bare SiO2 spheres. The monodispersed SiO2 spheres with average diameters of 260 nm were synthesized by the hydrolysis of tetraethyl orthosilicate (TEOS), while the shell part, Ni-Al LDH sheet was prepared by the hydrothermal procedure. The morphology of the samples was investigated via scanning transmission electron microscopy (STEM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The structure of the samples was characterized by X-ray diffraction (XRD). The species and distribution of elements in samples were confirmed by X-ray photoelectron spectroscopy (XPS), Energy dispersive analysis of X-ray (EDX) and elemental mapping in STEM. Subsequently, the ER characteristics of the composites dispersed in insulating oil were characterized by a rotational rheometer. The electric field-stimulated rheological performances (yield stress, viscosity, modulus, etc.) were observed under an external electric field, which is different from the Newtonian state in the free electric field. PMID:26670467

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

PubMed Central

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Božović, Ivan

2016-01-01

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms. PMID:27578237

Self-assembly preparation of SiO2@Ni-Al layered double hydroxide composites and their enhanced electrorheological characteristics

NASA Astrophysics Data System (ADS)

Ji, Xuqiang; Zhang, Wenling; Shan, Lei; Tian, Yu; Liu, Jingquan

2015-12-01

The core-shell structured SiO2@Ni-Al layered double hydroxide (LDH) composites were prepared via self-assembly of Ni-Al LDH on the surface of SiO2 spheres. Only coating a layer of ultrathin Ni-Al LDH sheet, the resulting SiO2@Ni-Al LDH composites exhibit significantly enhanced electrorheological (ER) characteristics compared to conventional bare SiO2 spheres. The monodispersed SiO2 spheres with average diameters of 260 nm were synthesized by the hydrolysis of tetraethyl orthosilicate (TEOS), while the shell part, Ni-Al LDH sheet was prepared by the hydrothermal procedure. The morphology of the samples was investigated via scanning transmission electron microscopy (STEM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The structure of the samples was characterized by X-ray diffraction (XRD). The species and distribution of elements in samples were confirmed by X-ray photoelectron spectroscopy (XPS), Energy dispersive analysis of X-ray (EDX) and elemental mapping in STEM. Subsequently, the ER characteristics of the composites dispersed in insulating oil were characterized by a rotational rheometer. The electric field-stimulated rheological performances (yield stress, viscosity, modulus, etc.) were observed under an external electric field, which is different from the Newtonian state in the free electric field.

Anisotropic fibrous thermal insulator of relatively thick cross section and method for making same

DOEpatents

Reynolds, Carl D.; Ardary, Zane L.

1979-01-01

The present invention is directed to an anisotropic thermal insulator formed of carbon-bonded organic or inorganic fibers and having a thickness or cross section greater than about 3 centimeters. Delaminations and deleterious internal stresses generated during binder curing and carbonizing operations employed in the fabrication of thick fibrous insulation of thicknesses greater than 3 centimeters are essentially obviated by the method of the present invention. A slurry of fibers, thermosetting resin binder and water is vacuum molded into the selected insulator configuration with the total thickness of the molded slurry being less than about 3 centimeters, the binder is thermoset to join the fibers together at their nexaes, and then the binder is carbonized to form the carbon bond. A second slurry of the fibers, binder and water is then applied over the carbonized body with the vacuum molding, binder thermosetting and carbonizing steps being repeated to form a layered insulator with the binder providing a carbon bond between the layers. The molding, thermosetting and carbonizing steps may be repeated with additional slurries until the thermal insulator is of the desired final thickness. An additional feature of the present invention is provided by incorporating opacifying materials in any of the desired layers so as to provide different insulating properties at various temperatures. Concentration and/or type of additive can be varied from layer-to-layer.

High temperature sensor

DOEpatents

Tokarz, Richard D.

1982-01-01

A high temperature sensor includes a pair of electrical conductors separated by a mass of electrical insulating material. The insulating material has a measurable resistivity within the sensor that changes in relation to the temperature of the insulating material within a high temperature range (1,000 to 2,000 K.). When required, the sensor can be encased within a ceramic protective coating.

Mechanical properties of atomically thin boron nitride and the role of interlayer interactions

PubMed Central

Falin, Aleksey; Cai, Qiran; Santos, Elton J. G.; Scullion, Declan; Qian, Dong; Zhang, Rui; Yang, Zhi; Huang, Shaoming; Watanabe, Kenji; Taniguchi, Takashi; Barnett, Matthew R.; Chen, Ying; Ruoff, Rodney S.; Li, Lu Hua

2017-01-01

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but investigation into their mechanical properties remains incomplete. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviours quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better interlayer integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, for example, as mechanical reinforcements. PMID:28639613

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

2018-06-25

Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

Tunnel Magneto Resistance of Fe/Insulator/Fe

NASA Astrophysics Data System (ADS)

Aryee, Dennis; Seifu, Dereje

Tri-layer thin films of Fe/Insulator/Fe were synthesized using magnetron DC/ RF sputtering with MgO insulator and Bi2Te3 topological insulators as middle buffer layer. The multi-layered samples thus produced were studied using in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), torque magnetometer (TMM), AFM, MFM, and magneto-resistance (MR). This system, that is Fe/Insulator/Fe on MgO(100) substrate, is a well-known tunnel magneto resistance (TMR) structure often used in magnetic tunnel junction (MTJ) devices. TMR effect is a method by which MTJs are used in developing magneto-resistive random access memory (MRAM), magnetic sensors, and novel logic devices. The main purpose behind this research is to measure the magnetic anisotropy of Fe/Insulator /Fe structure and correlate it to magneto-resistance. In this presentation, we will present results from MOKE, VSM, TMM, AFM, MFM, and MR studies of Fe/Insulator/Fe on MgO(100). We would like to acknowledge support by NSF-MRI-DMR-1337339.

Mechanism of the free charge carrier generation in the dielectric breakdown

NASA Astrophysics Data System (ADS)

Rahim, N. A. A.; Ranom, R.; Zainuddin, H.

2017-12-01

Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.

PubMed

Desplanque, L; Bucamp, A; Troadec, D; Patriarche, G; Wallart, X

2018-07-27

In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO 2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces. Several micron long in-plane nanowires (NWs) can be achieved as well as more complex nanostructures such as branched NWs. The electrical properties of the material are investigated by the characterization of an InSb NW MOSFET down to 77 K. The resulting room temperature field effect mobility values are comparable with those reported on back-gated MOSFETs based on InSb NWs obtained by vapor liquid solid growth or electrodeposition. This growth method paves the way to the fabrication of complex InSb-based nanostructures.

Laminated insulators having heat dissipation means

DOEpatents

Niemann, R.C.; Mataya, K.F.; Gonczy, J.D.

1980-04-24

A laminated body is provided with heat dissipation capabilities. The insulator body is formed by dielectric layers interleaved with heat conductive layers, and bonded by an adhesive to form a composite structure. The heat conductive layers include provision for connection to an external thermal circuit.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Contributions to the use of macrosounds for boiler decrusting

NASA Technical Reports Server (NTRS)

Bradeteanu, C.

1974-01-01

The results of an investigation indicate the following: (1) The deposition of incrustations on the heating surfaces of steam boilers can be prevented by inserting between heating surface and water an insulating layer on which the boiler incrustation will be deposited. (2) The insulating layer reduces the coefficient of heat transmission by 2%. (3) The insulating layer can be removed by macrosounds with a frequency of about 20 kHz, after any interval of boiler operation.

Technology Solutions for New and Existing Homes Case Study: Optimized Slab-on-Grade Foundation Insulation Retrofits

DOE Office of Scientific and Technical Information (OSTI.GOV)

T. Schirber; Goldberg, L.; Mosiman, G.

A more accurate assessment of SOG foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulationmore » at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated).« less

High-Performance Slab-on-Grade Foundation Insulation Retrofits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldberg, Louise F.; Mosiman, Garrett E.

A more accurate assessment of slab-on-grade foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulationmore » at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated).« less

Entropy generation in a parallel-plate active magnetic regenerator with insulator layers

NASA Astrophysics Data System (ADS)

Mugica Guerrero, Ibai; Poncet, Sébastien; Bouchard, Jonathan

2017-02-01

This paper proposes a feasible solution to diminish conduction losses in active magnetic regenerators. Higher performances of these machines are linked to a lower thermal conductivity of the Magneto-Caloric Material (MCM) in the streamwise direction. The concept presented here involves the insertion of insulator layers along the length of a parallel-plate magnetic regenerator in order to reduce the heat conduction within the MCM. This idea is investigated by means of a 1D numerical model. This model solves not only the energy equations for the fluid and solid domains but also the magnetic circuit that conforms the experimental setup of reference. In conclusion, the addition of insulator layers within the MCM increases the temperature span, cooling load, and coefficient of performance by a combination of lower heat conduction losses and an increment of the global Magneto-Caloric Effect. The generated entropy by solid conduction, fluid convection, and conduction and viscous losses are calculated to help understand the implications of introducing insulator layers in magnetic regenerators. Finally, the optimal number of insulator layers is studied.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

NASA Astrophysics Data System (ADS)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Electronic localization in an extreme 1-D conductor: the organic salt (TTDM-TTF) [Au(mnt)

NASA Astrophysics Data System (ADS)

Lopes, E. B.; Alves, H.; Ribera, E.; Mas-Torrent, M.; Auban-Senzier, P.; Canadell, E.; Henriques, R. T.; Almeida, M.; Molins, E.; Veciana, J.; Rovira, C.; Jérome, D.

2002-09-01

This article reports the investigation of a new low-dimensional organic salt, (TTDM-TTF)2 [ Au(mnt)2] , by single crystal X-ray diffraction, static magnetic susceptibility, EPR, thermopower, electrical resistivity measurements under pressure up to 25 kbar and band structure calculations. The crystal structure consists in a dimerized head to tail stacking of TTDM-TTF molecules separated by layers of orthogonal Au(mnt)2 anions. The absence of overlap between neighboring chains coming from this particular crystal structure leads to an extreme one-dimensionality (1-D) for which the carriers of the half-filled conduction band become strongly localized in a Mott-Hubbard insulating state. This material is the first 1-D conductor in which the Mott-Hubbard insulating character cannot be suppressed under pressure.

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

PubMed Central

Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

2016-01-01

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

NASA Astrophysics Data System (ADS)

Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

2017-10-01

As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

High-temperature sensor

DOEpatents

Not Available

1981-01-29

A high temperature sensor is described which includes a pair of electrical conductors separated by a mass of electrical insulating material. The insulating material has a measurable resistivity within the sensor that changes in relation to the temperature of the insulating material within a high temperature range (1000 to 2000/sup 0/K). When required, the sensor can be encased within a ceramic protective coating.

Downhole data transmission system

DOEpatents

Hall, David R.; Hall, Jr., H. Tracy; Pixton, David S; Dahlgren, Scott; Fox, Joe

2006-06-20

A system for transmitting data through a string of downhole components. In one aspect, the system includes first and second magnetically conductive, electrically insulating elements at both ends of the component. Each element includes a first U-shaped trough with a bottom, first and second sides and an opening between the two sides. Electrically conducting coils are located in each trough. An electrical conductor connects the coils in each component. In operation, a varying current applied to a first coil in one component generates a varying magnetic field in the first magnetically conductive, electrically insulating element, which varying magnetic field is conducted to and thereby produces a varying magnetic field in the second magnetically conductive, electrically insulating element of a connected component, which magnetic field thereby generates a varying electrical current in the second coil in the connected component.

Downhole Data Transmission System

DOEpatents

Hall, David R.; Hall, Jr., H. Tracy; Pixton, David; Dahlgren, Scott; Fox, Joe

2003-12-30

A system for transmitting data through a string of downhole components. In one aspect, the system includes first and second magnetically conductive, electrically insulating elements at both ends of the component. Each element includes a first U-shaped trough with a bottom, first and second sides and an opening between the two sides. Electrically conducting coils are located in each trough. An electrical conductor connects the coils in each component. In operation, a varying current applied to a first coil in one component generates a varying magnetic field in the first magnetically conductive, electrically insulating element, which varying magnetic field is conducted to and thereby produces a varying magnetic field in the second magnetically conductive, electrically insulating element of a connected component, which magnetic field thereby generates a varying electrical current in the second coil in the connected component.

In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X

PubMed Central

Perez-Muñoz, Ana M.; Schio, Pedro; Poloni, Roberta; Fernandez-Martinez, Alejandro; Rivera-Calzada, Alberto; Salas-Colera, Eduardo; Kinney, Joseph; Leon, Carlos; Santamaria, Jacobo; Garcia-Barriocanal, Javier; Goldman, Allen M.

2017-01-01

Field-effect experiments on cuprates using ionic liquids have enabled the exploration of their rich phase diagrams [Leng X, et al. (2011) Phys Rev Lett 107(2):027001]. Conventional understanding of the electrostatic doping is in terms of modifications of the charge density to screen the electric field generated at the double layer. However, it has been recently reported that the suppression of the metal to insulator transition induced in VO2 by ionic liquid gating is due to oxygen vacancy formation rather than to electrostatic doping [Jeong J, et al. (2013) Science 339(6126):1402–1405]. These results underscore the debate on the true nature, electrostatic vs. electrochemical, of the doping of cuprates with ionic liquids. Here, we address the doping mechanism of the high-temperature superconductor YBa2Cu3O7-X (YBCO) by simultaneous ionic liquid gating and X-ray absorption experiments. Pronounced spectral changes are observed at the Cu K-edge concomitant with the superconductor-to-insulator transition, evidencing modification of the Cu coordination resulting from the deoxygenation of the CuO chains, as confirmed by first-principles density functional theory (DFT) simulations. Beyond providing evidence of the importance of chemical doping in electric double-layer (EDL) gating experiments with superconducting cuprates, our work shows that interfacing correlated oxides with ionic liquids enables a delicate control of oxygen content, paving the way to novel electrochemical concepts in future oxide electronics. PMID:28028236

In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X.

PubMed

Perez-Muñoz, Ana M; Schio, Pedro; Poloni, Roberta; Fernandez-Martinez, Alejandro; Rivera-Calzada, Alberto; Cezar, Julio C; Salas-Colera, Eduardo; Castro, German R; Kinney, Joseph; Leon, Carlos; Santamaria, Jacobo; Garcia-Barriocanal, Javier; Goldman, Allen M

2017-01-10

Field-effect experiments on cuprates using ionic liquids have enabled the exploration of their rich phase diagrams [Leng X, et al. (2011) Phys Rev Lett 107(2):027001]. Conventional understanding of the electrostatic doping is in terms of modifications of the charge density to screen the electric field generated at the double layer. However, it has been recently reported that the suppression of the metal to insulator transition induced in VO 2 by ionic liquid gating is due to oxygen vacancy formation rather than to electrostatic doping [Jeong J, et al. (2013) Science 339(6126):1402-1405]. These results underscore the debate on the true nature, electrostatic vs. electrochemical, of the doping of cuprates with ionic liquids. Here, we address the doping mechanism of the high-temperature superconductor YBa 2 Cu 3 O 7-X (YBCO) by simultaneous ionic liquid gating and X-ray absorption experiments. Pronounced spectral changes are observed at the Cu K-edge concomitant with the superconductor-to-insulator transition, evidencing modification of the Cu coordination resulting from the deoxygenation of the CuO chains, as confirmed by first-principles density functional theory (DFT) simulations. Beyond providing evidence of the importance of chemical doping in electric double-layer (EDL) gating experiments with superconducting cuprates, our work shows that interfacing correlated oxides with ionic liquids enables a delicate control of oxygen content, paving the way to novel electrochemical concepts in future oxide electronics.

Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

PubMed

Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

2017-11-22

Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (<0.05 at 1 kHz). Both high electric displacement and high electric breakdown strength were achieved in the films with 10 wt % core-shell fillers loaded. The maximum energy storage density of 7.018 J/cm 3 was measured at 2350 kV/cm, which shows significant enhancement than those of the pure P(VDF-HFP) films and analogous composited films with converse insulating-conductive core-shell fillers. A Maxwell-Wagner capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

High pressure electrical insulated feed thru connector

DOEpatents

Oeschger, Joseph E.; Berkeland, James E.

1979-11-13

A feed-thru type hermetic electrical connector including at least one connector pin feeding through an insulator block within the metallic body of the connector shell. A compression stop arrangement coaxially disposed about the insulator body is brazed to the shell, and the shoulder on the insulator block bears against this top in a compression mode, the high pressure or internal connector being at the opposite end of the shell. Seals between the pin and an internal bore at the high pressure end of the insulator block and between the insulator block and the metallic shell at the high pressure end are hermetically brazed in place, the first of these also functioning to transfer the axial compressive load without permitting appreciable shear action between the pin and insulator block.

Inhomogeneity at the LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Claeson, T.; Kalabukhov, A.; Gunnarsson, R.; Winkler, D.; Borjesson, J.; Ljustina, N.; Olsson, E.; Popok, V.; Boikov, Yu.; Serenkov, I.; Sakharov, V.

2010-03-01

High electrical conductivity has been reported for the interface between two wide-band gap insulators, LaAlO3 (LAO) and SrTiO3 (STO). It occurs above a critical thickness of LAO and can be tuned by an electric field. The conduction has been attributed to i) ``polar catastrophe'' , where the electrostatic charge at the interface is compensated by the transfer of half an electron per unit cell to the interface, ii) oxygen vacancies in the STO, and iii) cation intermixing, which may result in the formation of metallic La1-xSrxTiO3 layer. The relation between microstructure and electrical properties is crucial for understanding the origin of electrical conductivity. We have investigated the interface composition using medium-energy ion spectroscopy, high resolution electron microscopy, and Kelvin probe force microscopy. We find a correlation between cationic intermixing at the interface and electrical properties and inhomogeneities of the interface conductivity that may support a percolation model. Work supported by Swedish VR & KAW, Russian ISTC 3743, EC NANOXIDE

Polyimide/Glass Composite High-Temperature Insulation

NASA Technical Reports Server (NTRS)

Pater, Ruth H.; Vasquez, Peter; Chatlin, Richard L.; Smith, Donald L.; Skalski, Thomas J.; Johnson, Gary S.; Chu, Sang-Hyon

2009-01-01

Lightweight composites of RP46 polyimide and glass fibers have been found to be useful as extraordinarily fire-resistant electrical-insulation materials. RP46 is a polyimide of the polymerization of monomeric reactants (PMR) type, developed by NASA Langley Research Center. RP46 has properties that make it attractive for use in electrical insulation at high temperatures. These properties include high-temperature resistance, low relative permittivity, low dissipation factor, outstanding mechanical properties, and excellent resistance to moisture and chemicals. Moreover, RP46 contains no halogen or other toxic materials and when burned it does not produce toxic fume or gaseous materials. The U. S. Navy has been seeking lightweight, high-temperature-resistant electrical-insulation materials in a program directed toward reducing fire hazards and weights in ship electrical systems. To satisfy the requirements of this program, an electrical-insulation material must withstand a 3-hour gas-flame test at 1,600 F (about 871 C). Prior to the development reported here, RP46 was rated for use at temperatures from -150 to +700 F (about -101 to 371 C), and no polymeric product - not even RP46 - was expected to withstand the Navy 3-hour gas-flame test.

Solid-state non-volatile electronically programmable reversible variable resistance device

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni (Inventor); Thakoor, Sarita (Inventor); Daud, Taher (Inventor); Thakoor, Aniklumar P. (Inventor)

1989-01-01

A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.

A percolation approach to study the high electric field effect on electrical conductivity of insulating polymer

NASA Astrophysics Data System (ADS)

Benallou, Amina; Hadri, Baghdad; Martinez-Vega, Juan; El Islam Boukortt, Nour

2018-04-01

The effect of percolation threshold on the behaviour of electrical conductivity at high electric field of insulating polymers has been briefly investigated in literature. Sometimes the dead ends links are not taken into account in the study of the electric field effect on the electrical properties. In this work, we present a theoretical framework and Monte Carlo simulation of the behaviour of the electric conductivity at high electric field based on the percolation theory using the traps energies levels which are distributed according to distribution law (uniform, Gaussian, and power-law). When a solid insulating material is subjected to a high electric field, and during trapping mechanism the dead ends of traps affect with decreasing the electric conductivity according to the traps energies levels, the correlation length of the clusters, the length of the dead ends, and the concentration of the accessible positions for the electrons. A reasonably good agreement is obtained between simulation results and the theoretical framework.

Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

NASA Astrophysics Data System (ADS)

Wu, Aimin; Wang, Xi; Wei, Xing; Chen, Jing; Chen, Ming; Zhang, Zhengxuan

2009-05-01

Si ion-implantation and post annealing of silicon wafers prior to wafer bonding were used to radiation-harden the thermal oxide layer of Silicon on Insulator structures. After grinding and polishing, Total-Dose-Radiation-Hardened SOI (TDRH-SOI) wafers with several-micron-thick device layers were prepared. Electrical characterization before and after X-ray irradiation showed that the flatband voltage shift induced by irradiation was reduced by this preprocessing. Photoluminescence Spectroscopy (PL), Transmission Electron Microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results indicated that the improvement of the total dose response of the TDRH-SOI wafer was associated with formation of Si nanoclusters in the implanted oxide layer, suggesting that these were the likely candidates for electron and proton trapping centers that reduce the positive charge buildup effect in the buried oxide.

Quantum transport through MoS2 constrictions defined by photodoping.

PubMed

Epping, Alexander; Banszerus, Luca; Güttinger, Johannes; Krückeberg, Luisa; Watanabe, Kenji; Taniguchi, Takashi; Hassler, Fabian; Beschoten, Bernd; Stampfer, Christoph

2018-05-23

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS 2 ) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS 2 flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS 2 layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS 2 /hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.

Effects of non-uniform temperature gradients on surface tension driven two component magneto convection in a porous- fluid system

NASA Astrophysics Data System (ADS)

Manjunatha, N.; Sumithra, R.

2018-04-01

The problem of surface tension driven two component magnetoconvection is investigated in a Porous-Fluid system, consisting of anincompressible two component electrically conducting fluid saturatedporous layer above which lies a layer of the same fluid in the presence of a uniform vertical magnetic field. The lower boundary of the porous layeris rigid and the upper boundary of the fluid layer is free with surfacetension effects depending on both temperature and concentration, boththese boundaries are insulating to heat and mass. At the interface thevelocity, shear and normal stress, heat and heat flux, mass and mass fluxare assumed to be continuous suitable for Darcy-Brinkman model. Theeigenvalue problem is solved in linear, parabolic and inverted parabolictemperature profiles and the corresponding Thermal Marangoni Numberis obtained for different important physical parameters.

Electrical properties of solution processed highly transparent ZnO TFT with organic gate dielectric

NASA Astrophysics Data System (ADS)

Pandya, Nirav C.; Joshi, Nikhil G.; Trivedi, U. N.; Joshi, U. S.

2013-02-01

All oxide thin film transistors (TFT) with zinc oxide active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Thin film transistors (TFTs) with amorphous zinc oxide as channel layers and poly-vinyl alcohol as dielectric layers were fabricated at low temperatures by chemical solution deposition (CSD). Atomic force microscopy (AFM) confirmed nano grain size with fairly smooth surface topography. Very small leakage currents were achieved in the transfer curves, while soft saturation was observed in the output current voltage (I-V) characteristics of the device. Optical transmission of better than 87% in the visible region was estimated, which is better than the organic gate insulator based ZnO TFTs reported so far. Our results offer lot of promise to TFT based display and optoelectronics.

Quantum transport through MoS2 constrictions defined by photodoping

NASA Astrophysics Data System (ADS)

Epping, Alexander; Banszerus, Luca; Güttinger, Johannes; Krückeberg, Luisa; Watanabe, Kenji; Taniguchi, Takashi; Hassler, Fabian; Beschoten, Bernd; Stampfer, Christoph

2018-05-01

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS2) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS2 flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS2 layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS2/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.

Methods of Testing Thermal Insulation and Associated Test Apparatus

NASA Technical Reports Server (NTRS)

Fesmire, James E. (Inventor); Augustynowicz, Stanislaw D. (Inventor)

2004-01-01

The system and method for testing thermal insulation uses a cryostatic insulation tester having a vacuum chamber and a cold mass including a test chamber and upper and lower guard chambers adjacent thereto. The thermal insulation is positioned within the vacuum chamber and adjacent the cold mass. Cryogenic liquid is supplied to the test chamber, upper guard and lower guard to create a first gas layer in an upper portion of the lower guard chamber and a second gas layer in an upper portion of the test chamber. Temperature are sensed within the vacuum chamber to test the thermal insulation.

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Anisotropic electrical conduction in ferromagnetic-antiferromagnetic-ferromagnetic oxide trilayers

NASA Astrophysics Data System (ADS)

Padhan, P.; Prellier, W.

2007-07-01

An antiferromagnetic layer of an insulator PrMnO3 , CaMnO3 , or Pr0.5Ca0.5MnO3 has been sandwiched between two layers of ferromagnetic SrRuO3 on (001)-oriented SrTiO3 and LaAlO3 substrates using the pulsed laser deposition technique. Magnetotransport measurements reveal a change of anisotropy in the case of trilayers having a Pr0.5Ca0.5MnO3 or a CaMnO3 spacer layer as compared to that of 20unit cells thick film of SrRuO3 , while in the case of PrMnO3 spacer layer, the change of anisotropy is negligible. In addition, two switching magnetic fields are observed with the trilayer made of PrMnO3 spacer layer in the field-dependent anisotropic magnetoresistance. The results are discussed using the concept of spin-orbit coupling and spin mixing conduction process at the interfaces.

Internal insulation system development

NASA Technical Reports Server (NTRS)

Gille, J. P.

1973-01-01

The development of an internal insulation system for cryogenic liquids is described. The insulation system is based on a gas layer concept in which capillary or surface tension effects are used to maintain a stable gas layer within a cellular core structure between the tank wall and the contained cryogen. In this work, a 1.8 meter diameter tank was insulated and tested with liquid hydrogen. Ability to withstand cycling of the aluminum tank wall to 450 K was a design and test condition.

Flux pumping for non-insulated and metal-insulated HTS coils

NASA Astrophysics Data System (ADS)

Ma, Jun; Geng, Jianzhao; Coombs, T. A.

2018-01-01

High-temperature superconducting (HTS) coils wound from coated conductors without turn-to-turn insulation (non-insulated (NI) coils) have been proven with excellent electrical and thermal performances. However, the slow charging of NI coils has been a long-lasting problem. In this work, we explore using a transformer-rectifier HTS flux pump to charge an NI coil and a metal-insulated coil. The charging performance comparison is made between different coils. Comprehensive study is done to thoroughly understand the electrical-magnetic transience in charging these coils. We will show that the low-voltage high-current flux pump is especially suitable for charging NI coils with very low characteristic resistance.

Downhole transmission system

DOEpatents

Hall, David R [Provo, UT; Fox, Joe [Spanish Fork, UT

2008-01-15

A transmission system in a downhole component comprises a data transmission element in both ends of the downhole component. Each data transmission element houses an electrically conducting coil in a MCEI circular trough. An electrical conductor connects both the transmission elements. The electrical conductor comprises at least three electrically conductive elements insulated from each other. In the preferred embodiment the electrical conductor comprises an electrically conducting outer shield, an electrically conducting inner shield and an electrical conducting core. In some embodiments of the present invention, the electrical conductor comprises an electrically insulating jacket. In other embodiments, the electrical conductor comprises a pair of twisted wires. In some embodiments, the electrical conductor comprises semi-conductive material.

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

NASA Astrophysics Data System (ADS)

Gueye, Ibrahima; Le Rhun, Gwenael; Renault, Olivier; Defay, Emmanuel; Barrett, Nicholas

2017-11-01

We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr0.52Ti0.48O3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrOx surface phase. Low Pb excess gives rise to a discontinuous layer of ZrOx on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.

Quantum spin liquids and the metal-insulator transition in doped semiconductors.

PubMed

Potter, Andrew C; Barkeshli, Maissam; McGreevy, John; Senthil, T

2012-08-17

We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum spin liquid state with diffusive charge neutral "spinon" excitations. Such a quantum spin liquid state can appear as an intermediate phase between the metal and the Anderson-Mott insulator. An immediate testable consequence is the presence of metallic thermal conductivity at low temperature in the electrical insulator near the metal-insulator transition. Further, we show that though the transition is second order, the zero temperature residual electrical conductivity will jump as the transition is approached from the metallic side. However, the electrical conductivity will have a nonmonotonic temperature dependence that may complicate the extrapolation to zero temperature. Signatures in other experiments and some comparisons with existing data are made.

Data transmission element for downhole drilling components

DOEpatents

Hall, David R.; Hall, Jr., H. Tracy; Pixton, David S.; Dahlgren, Scott; Fox, Joe; Sneddon, Cameron; Briscoe, Michael

2006-01-31

A robust data transmission element for transmitting information between downhole components, such as sections of drill pipe, in the presence of hostile environmental conditions, such as heat, dirt, rocks, mud, fluids, lubricants, and the like. The data transmission element components include a generally U-shaped annular housing, a generally U-shaped magnetically conductive, electrically insulating element such as ferrite, and an insulated conductor. Features on the magnetically conducting, electrically insulating element and the annular housing create a pocket when assembled. The data transmission element is filled with a polymer to retain the components within the annular housing by filling the pocket with the polymer. The polymer can bond with the annular housing and the insulated conductor but preferably not the magnetically conductive, electrically insulating element. A data transmission element is mounted within a recess proximate a mating surface of a downhole drilling component, such as a section of drill pipe.

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE PAGES

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

2018-03-13

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Electrical Insulation Fire Characteristics : Volume 2. Toxicity.

DOT National Transportation Integrated Search

1978-12-01

The purpose of this research was to determine the relative inhalation toxicity of the thermal degradation products or gaseous pyrolysis of selected types of electrical wiring insulations. The specific materials to be evaluated were supplied by the Bo...

Semi-flexible gas-insulated transmission line using sandwiched discs for intermittent flexing joints

DOEpatents

Kommineni, P.R.

1983-02-15

A gas-insulated transmission line includes an outer sheath, an inner conductor, an insulating gas electrically insulating the inner conductor from the outer sheath, and insulating supports insulatably supporting the inner conductor within the outer sheath. The inner conductor is provided with flexibility by the use of main conductor sections which are joined together through a conductor hub section and flexible flexing elements. Stress shields are provided to control the electric field at the locations of the conductor hub sections where the insulating supports are contacting the inner conductor. The flexing elements are formed by sandwiching together, by fusing, a pair of thin hollow discs which are fixedly secured to both the main conductor sections and the conductor hub section. 4 figs.

External Insulation of Masonry Walls and Wood Framed Walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, P.

2013-01-01

The use of exterior insulation on a building is an accepted and effective means to increase the overall thermal resistance of the assembly that also has other advantages of improved water management and often increased air tightness of building assemblies. For thin layers of insulation (1" to 1 1/2"), the cladding can typically be attached directly through the insulation back to the structure. For thicker insulation layers, furring strips have been added as a cladding attachment location. This approach has been used in the past on numerous Building America test homes and communities (both new and retrofit applications), and hasmore » been proven to be an effective and durable means to provide cladding attachment. However, the lack of engineering data has been a problem for many designers, contractors, and code officials. This research project developed baseline engineering analysis to support the installation of thick layers of exterior insulation on existing masonry and frame walls. Furthermore, water management details necessary to integrate windows, doors, decks, balconies and roofs were created to provide guidance on the integration of exterior insulation strategies with other enclosure elements.« less