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Sample records for electroluminescent devices based

  1. Hybrid electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  2. White organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Tsou, Chuan-Cheng; Lu, Huei-Tzong; Yokoyama, Meiso

    2006-04-01

    This study investigates energy transfer between N, N'-bis-(1-naphthyl)- N, N'-diphenyl-1,1-biphenyl-4-4'-diamine (NPB) host material and 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5 H-benzo[ ij]quinolizin-8-yl) vinyl]-4 H-pyran (DCM2) fluorescent dye in organic electroluminescent (OEL) devices to produce white-color emission. Bathocuproine (BCP) was applied as a hole-blocking layer (HBL) due to its significantly large HOMO, while tris-(8-hydroxy-quinoline) aluminum (Alq 3) was employed in the electron transport layer (ETL). Two OEL device structures were investigated, ITO/NPB:DCM2 ( x%)/Alq 3/Al, and ITO/NPB:DCM2 ( y%)/BCP/Alq 3/Al. In this study, doping DCM2 into the NPB host material could not yield red emission in the case of ITO/NPB:DCM2 ( x%)/Alq 3/Al structure device, even when the DCM2 doping concentration was increased from x=1% to 10%. However, when BCP was inserted between the NPB:DCM2 layer and the Alq 3 layer, the color turned when the concentration of DCM2 doped into NPB was changed. Consequently, the white OEL device with CIE coordinates (0.34,0.34) was observed for the device containing 1% DCM2 doping into NPB host material.

  3. Organic electroluminescent devices

    SciTech Connect

    Sheats, J.R.; Antoniadis, H.; Hueschen, M.; Leonard, W.; Miller, J.; Moon, R.; Roitman, D.; Stocking, A.

    1996-08-16

    Electroluminscene from organic materials has the potential to enable low-cost, full-color flat-panel displays, as well as other emissive products. Some materials have now demonstrated adequate efficiencies (1 to 15 lumens/watt) and lifetimes (>5000 hours) for practical use; however, the factors that govern lifetime remain poorly understood. This article provides a brief review of device principles and applications requirements and focuses on the understanding of reliability issues. 59 refs., 7 figs.

  4. Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots.

    PubMed

    Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

    2015-03-12

    Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices. PMID:25721494

  5. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    NASA Astrophysics Data System (ADS)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  6. Polymer matrix electroluminescent materials and devices

    DOEpatents

    Marrocco, III, Matthew L.; Motamedi, Farshad J.; Abdelrazzaq, Feras Bashir; Abdelrazzaq, legal representative, Bashir Twfiq

    2012-06-26

    Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units covalently coordinated to a phosphorescent or luminescent metal ion or metal ion complexes. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are also disclosed.

  7. Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Jing-hua, Niu; Rui-nian, Hua; Wen-lian, Li; Ming-tao, Li; Tian-zhi, Yu

    2006-06-01

    Rare earth terbium (Tb)-doped zinc sulfide (ZnS) nanocrystals (NCs) sized between 3 and 4 nm were synthesized via a co-precipitation reaction of precursors, zinc acetate (Zn(CH3COO)2), terbium chloride (TbCl3 · 6H2O), lithium fluoride (LiF) and thiocarbamide in a methacrylic acid/citric acid/methanol mixing solution. The NCs were characterized by means of x-ray powder diffraction, a transmission electron microscope and a fluorescence spectrophotometer. Electroluminescent (EL) properties of the device having a hybrid organic/inorganic multilayer structure with ITO/(poly(3, 4-ethylene dioxythiophene):poly(styrene sulfonate (PEDOT-PSS)(70 nm)/poly(vinylcobarzale)(PVK)(100 nm)/ZnS:Tb NCs(120 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP)(30 nm)/LiF(1 nm)/Al(100 nm) were studied. Injecting electrons and holes were recombined to form excitons which were confined within the ZnS:Tb NC host and then the exciton energy was transferred to the Tb3+ centre, and finally the green emission of the Tb3+ ion was observed. The four emissions which peaked at 430, 491, 546 and 577 nm were attributed to the electronic transitions of the ZnS host and the 5D4 - 7F6, 5D4 - 7F5 and 5D4 - 7F4 of the Tb3+ centre, respectively, when the EL device was driven at 10 V. The maximum luminance of the ZnS:Tb NCs-based device is about 15 cd m-2 at 25 V driving voltage.

  8. Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

    2015-03-01

    Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu

  9. Organic electroluminescent devices having improved light extraction

    DOEpatents

    Shiang, Joseph John

    2007-07-17

    Organic electroluminescent devices having improved light extraction include a light-scattering medium disposed adjacent thereto. The light-scattering medium has a light scattering anisotropy parameter g in the range from greater than zero to about 0.99, and a scatterance parameter S less than about 0.22 or greater than about 3.

  10. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    NASA Astrophysics Data System (ADS)

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-07-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules.

  11. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  12. Method for producing high energy electroluminescent devices

    DOEpatents

    Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

    1992-09-29

    A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

  13. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    NASA Astrophysics Data System (ADS)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  14. White light-emitting organic electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

    2006-06-20

    A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

  15. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    PubMed

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%. PMID:27607953

  16. Near-infrared electroluminescence from light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Yang; Lv, Chunyan; Zhu, Chen; Li, Si; Ma, Xiangyang; Yang, Deren

    2014-05-01

    We report on near-infrared (NIR) electroluminescence (EL) from the light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures. NIR emissions peaking at ˜910, 1090, and 1370 nm, originated from intra-4f transitions in Nd3+ ions, can be activated by a forward bias voltage as low as ˜5 V. Such NIR EL is triggered by the energy transferred from TiO2 host to Nd3+ ions. It is found that the coexistence of anatase and rutile phases in the TiO2 host enables the device to exhibit pronounced Nd-related EL without concurrent emission from the TiO2 host itself, quite other than the case of existing only anatase phase in TiO2 host. We tentatively suggest that the anatase/rutile interface states play important role in the energy transfer from TiO2 host to Nd3+ ions.

  17. Electroluminescent devices with function of electro-optic shutter.

    PubMed

    Song, Seongkyu; Jeong, Jaewook; Chung, Seok Hwan; Jeong, Soon Moon; Choi, Byeongdae

    2012-09-10

    The polymer-dispersed liquid crystal (PDLC) was used as a dielectric layer of electroluminescent (EL) device to provide multi-function of electroluminescence and electro-optic shutter. A 50 μm-thick PDLC layer was formed between a transparent electrode and a ZnS:Cu phosphor layer. The electro-optic properties of the EL device were not distorted by the introduction of the PDLC layer. The extraction efficiency of luminescence was improved by more than 14% by PDLC layer. The transmittance of the PDLC was also founded not to be degraded significantly by excitation frequency. Therefore, the electroluminescence of the device was ignited by excitation frequency at a given voltage for full transparency of the PDLC. This device has great potential for applications in transparent displays with the function of a privacy window. PMID:23037230

  18. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

  19. Solid state carbon nanotube device for controllable trion electroluminescence emission

    NASA Astrophysics Data System (ADS)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  20. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  1. Multilayer white light-emitting organic electroluminescent device.

    PubMed

    Kido, J; Kimura, M; Nagai, K

    1995-03-01

    Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Here, the fabrication of a white light-emitting organic electroluminescent device made from vacuum-deposited organic thin films is reported. In this device, three emitter layers with different carrier transport properties, each emitting blue, green, or red light, are used to generate white light. Bright white light, over 2000 candelas per square meter, nearly as bright as a fluorescent lamp, was successfully obtained at low drive voltages such as 15 to 16 volts. The applications of such a device include paper-thin light sources, which are particularly useful for places that require lightweight illumination devices, such as in aircraft and space shuttles. Other uses are a backlight for liquid crystal display as well as full color displays, achieved by combining the emitters with micropatterned color filters.

  2. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

  3. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOEpatents

    Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

    2001-12-18

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  4. Efficient red electroluminescent devices with sterically hindered phosphorescent platinum(II) Schiff base complexes and iridium complex codopant.

    PubMed

    Zhou, Liang; Kwong, Chun-Lam; Kwok, Chi-Chung; Cheng, Gang; Zhang, Hongjie; Che, Chi-Ming

    2014-10-01

    Sterically hindered platinum(II) Schiff base complexes were prepared. Complex 4, which displays red emission with a quantum yield of 0.29 in a thin film and a self-quenching rate constant of 1×10(-7) dm(3) mol(-1)  s(-1), was used to fabricate organic light-emitting diodes with single or double emissive layers (EMLs). An iridium(III) complex with a wide band gap was codoped into the electron-dominant EML to act as a deep electron trapper, and red-light-emitting devices with the highest current, power, and external quantum efficiencies of 20.43 cd A(-1) 18.33 Lm W(-1), and 11.7%, respectively, were fabricated. A high current efficiency and EQE of up to 14.69 cd A(-1) and 8.3%, respectively, were achieved at a high brightness of 1000 cd m(-2). The significant delay of efficiency roll-off is attributed to the bulky 3D structure of the norbornene moiety at the periphery of the Schiff base ligand of 4 and to the new device design strategy. The fabricated device had a projected lifetime (LT50) of 18,000 h.

  5. In-flight gas phase passivation of silicon nanocrystals for novel inorganic-silicon nanocrystal based electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Liptak, Richard William

    Silicon nanocrystals (SiNCs) have become a heavily researched material over the past several years. Researchers envision that this material can be used in many diverse applications such as electronic devices, non-toxic biological tags, optical devices such as LEDs, lasers or displays, thermoelectrics, and photovoltaic (PV) applications. For many of these proposed applications one needs to properly control the NC size and the surface chemistry via passivation. Current passivation techniques allow for the creation of highly efficient SiNC optical emitters, however the emission of these NCs are fixed in the red-NIR range. To resolve this issue several novel in-flight passivation techniques were investigated. A novel dual-plasma setup which allows for the in-flight passivation of SiNCs through a thermal or LPCVD based nitridation process was developed first. FTIR and XPS analysis were used to study the surface chemistry on of the nitride passivated NCs while TEM was used to investigate whether or not a "shell" was grown on the surface. PL measurements and thermal stability tests were performed on the nitride passivated NCs to gain a further understanding of the stability (in both air as well as other ambients) of the NCs and their surface chemistry. Tunable full color emission from SiNCs was developed for the dual-plasma reactor utilizing CF4 as both an etching and passivating source. F radicals generated in the etching plasma remove Si from the surface of the NC, while at the same time CF2 radicals lead to the formation of a fluorocarbon passivation layer on the NC surface. By controlling the parameters of the reactor (CF4 flow rate, power), the NC size and thus its color can be controlled. Red to green luminescence was observed from SiNCs and is believed to be due to the quantum confinement effect. The blue emission observed from the NCs is appears to be related to oxide related surface states. Despite the defects, high QY was observed from these CF4-etched NCs. The

  6. Iridium(III) emitters based on 1,4-disubstituted-1H-1,2,3-triazoles as cyclometalating ligand: synthesis, characterization, and electroluminescent devices.

    PubMed

    Fernández-Hernández, Jesús M; Beltrán, Juan I; Lemaur, Vincent; Gálvez-López, Maria-Dolores; Chien, Chen-Han; Polo, Federico; Orselli, Enrico; Fröhlich, Roland; Cornil, Jérôme; De Cola, Luisa

    2013-02-18

    A series of blue and blue-green emitters based on neutral bis- and tris-cyclometalated Ir(III) complexes with 1-benzyl-4-(2,6-difluorophenyl)-1H-1,2,3-triazole (dfptrBn) as cyclometalating ligand is reported. The bis-cyclometalated complexes of the type [Ir(dfptrBn)(2)(L(^)X)] with different ancillary ligands, L(^)X = picolinate (pic) (2) or 2-(5-(perfluorophenyl)-2H-1,2,4-triazol-3-yl)pyridine (pytrF(5)) (3), are described and their photophysical properties compared with the analogous complexes containing the archetypal 2-(2,4-difluorophenyl)pyridinato (dfppy) as cyclometaled ligand (C(^)N). Complex 2 exhibits a marked solvatochromic behavior, from 475 nm in toluene to 534 nm in formamide, due to the strong MLCT character of its emissive excited state. Complex 3 displays a true-blue emission, narrower in the visible part than FIrpic. In addition, the homoleptic complex [Ir(dfprBn)(3)] (4) and the heteroleptic compounds with mixed arylpyridine/aryltriazole ligands, [Ir(dfptrBn)(2)(C(^)N)] (C(^)N = 2-phenylpyridinato (ppy) (5) or dfppy (6)), have been synthesized and fully characterized. The facial (fac) complex fac-4 is emissive at 77 K showing a deep-blue emission, but it is not luminescent in solution at room temperature similarly to their phenylpyrazole counterparts. However, the fac isomers, fac-5 and fac-6, are highly emissive in solution and thin films, reaching emission quantum yields of 76%, with emission colors in the blue to blue-green region. The photophysical properties for all complexes have been rationalized by means of quantum-chemical calculations. In addition, we constructed electroluminescent devices, organic light-emitting diodes (OLEDs) by sublimation of fac-6, and by solution processed polymer-based devices (PLEDs) using complexes fac-5 or fac-6 as dopants. PMID:23383706

  7. Electroluminescent device having improved light output

    DOEpatents

    Tyan; Yuan-Sheng; Preuss, Donald R.; Farruggia, Giuseppe; Kesel, Raymond A.; Cushman, Thomas R.

    2011-03-22

    An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

  8. Conduction and trapping in electroluminescent polymer devices

    NASA Astrophysics Data System (ADS)

    Campbell, Alasdair J.; Weaver, Michael S.; Lidzey, David G.; Bradley, Donal D. C.; Werner, Ekkehard; Bruetting, Wolfgang; Schwoerer, Markus

    1998-12-01

    The current-voltage characteristics of ITO/polymer film/Al or Au devices of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer can be fitted at high applied bias to a power law of the form J equals KVm where m increases with decreasing temperature, log(K) is proportional to m, and K is proportional to d-(alpha m) where d is the film thickness and (alpha) is a constant. (alpha) 2 and 1 for the Al and Au cathode devices respectively. Different single carrier space charge limited conduction (SCLC) theories, including either an exponential trap distribution or a hopping transport field and temperature dependent mobility, are used to try and explain this behavior. Both models are in good agreement with the general experimental results, but can also be criticized on a number of specific issues.Mixed SCLC models and the effect of dispersive transport are also explored. It is concluded that carrier mobility and trap measurements are required to distinguish between these models. To this end, initial trap measurements of ITO/PPV/Al devices using deep level transient spectroscopy (DLTS) are reported. Very deep positive carrier transport with emptying times > 4 minutes have been detected. The non-exponential DLTS transients have been successfully modeled on an isoelectronic trap level emptying to a Gaussian distribution of transport states, with a trap depth and density of 0.8eV and 4 by 1016 cm-3 respectively.

  9. Bulk limited conduction in electroluminescent polymer devices

    NASA Astrophysics Data System (ADS)

    Campbell, A. J.; Weaver, M. S.; Lidzey, D. G.; Bradley, D. D. C.

    1998-12-01

    The current-voltage (J-V) characteristics of ITO/polymer film/Al or Au structures of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer have been recorded for a range of different film thickness d and temperatures T. At high applied bias all the characteristics can be fitted over a given range to a power law J=KVm, where m increases with decreasing T, log(K) is proportional to m, and K is proportional to d-α m, where α˜2 (ITO/polymer film/Al devices) and ˜1 (ITO/polymer film/Au devices). Different single carrier space charge limited conduction theories have been used to try and explain this behavior. The analytical theory in which the carrier density is decreased by an exponential trap distribution lying below effectively isoelectronic transport states is in good agreement, but cannot explain the thickness dependence of the ITO/polymer film/Au devices and can be criticized as being physically unreasonable. A numerical analysis in which the mobility has the field and temperature dependence found for hopping transport in disordered systems is also in good agreement, but can only fit a small range of J and cannot explain the magnitude of K, the temperature dependence of m or the abrupt change in slope in the J-V characteristics with increasing bias. Mixed models are equally good but cannot explain the deviations from experiment. We consider that further experimental studies of carrier mobilities and the nature of the traps present in such materials is required to distinguish between these models and resolve the nature of bulk limited conduction in conjugated polymers.

  10. Optical properties of inorganic electroluminescent devices with nanostripe electrodes

    NASA Astrophysics Data System (ADS)

    Nonaka, Toshihiro; Yamamoto, Shin-ichi

    2016-03-01

    In this paper, we report on the luminescence (emission) characteristics of a laminated dispersion-type inorganic electroluminescent (EL) device with a nanostripe electrode made of thin Al film, instead of a conventional indium-tin oxide (ITO) transparent electrode, on the emission side of the device. The transmittance of the Al nanostripe electrode, with 60-nm line-and-space widths, was 45%. We compared an inorganic EL device positioned between two thin films of Al and the inorganic EL device with the Al nanostripe electrode using electric field simulations and actual experiments. We were able to apply the same electric field intensity to the phosphor layer in the conventional structure and to the new structure. Therefore, with an Al nanostripe electrode on one side of the EL device, it is possible to fabricate an ITO-free display.

  11. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

    NASA Astrophysics Data System (ADS)

    Yang, Can; Wang, Xiao-Ping; Wang, Li-Jun; Pan, Xiu-Fang; Li, Song-Kun; Jing, Long-Wei

    2013-08-01

    An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

  12. Theoretical and material studies of thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.

    1989-01-01

    Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

  13. Mechanically flexible organic electroluminescent device with directional light emission

    DOEpatents

    Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

    2005-05-10

    A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

  14. Highly Efficient, Color-Reproducible Full-Color Electroluminescent Devices Based on Red/Green/Blue Quantum Dot-Mixed Multilayer.

    PubMed

    Lee, Ki-Heon; Han, Chang-Yeol; Kang, Hee-Don; Ko, Heejoo; Lee, Changho; Lee, Jonghyuk; Myoung, NoSoung; Yim, Sang-Youp; Yang, Heesun

    2015-11-24

    Over the past few years the performance of colloidal quantum dot-light-emitting diode (QLED) has been progressively improved. However, most of QLED work has been fulfilled in the form of monochromatic device, while full-color-enabling white QLED still remains nearly unexplored. Using red, green, and blue quantum dots (QDs), herein, we fabricate bichromatic and trichromatic QLEDs through sequential solution-processed deposition of poly(9-vinlycarbazole) (PVK) hole transport layer, two or three types of QDs-mixed multilayer, and ZnO nanoparticle electron transport layer. The relative electroluminescent (EL) spectral ratios of constituent QDs in the above multicolored devices are found to inevitably vary with applied bias, leading to the common observation of an increasing contribution of a higher-band gap QD EL over low-band gap one at a higher voltage. The white EL from a trichromatic device is resolved into its primary colors through combining with color filters, producing an exceptional color gamut of 126% relative to National Television Systems Committee (NTSC) color space that a state-of-the-art full-color organic LED counterpart cannot attain. Our trichromatic white QLED also displays the record-high EL performance such as the peak values of 23,352 cd/m(2) in luminance, 21.8 cd/A in current efficiency, and 10.9% in external quantum efficiency. PMID:26435403

  15. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    NASA Astrophysics Data System (ADS)

    Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

    2016-05-01

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

  16. About the electronic and photophysical properties of iridium(III)-pyrazino[2,3-f][1,10]-phenanthroline based complexes for use in electroluminescent devices.

    PubMed

    Cortés-Arriagada, Diego; Sanhueza, Luis; González, Iván; Dreyse, Paulina; Toro-Labbé, Alejandro

    2016-01-14

    A family of cyclometalated Ir(III) complexes was studied through quantum chemistry calculations to get insights into their applicability in light electrochemical cells (LECs). The complexes are described as [Ir(R-C^N)2(ppl)](+), where ppl is the pyrazino[2,3-f][1,10]-phenanthroline ancillary ligand. The modification of the HOMO energy in all the complexes was achieved by means of different R-C^N cyclometalating ligands, with R-ppy (phenylpyridine), R-pyz (1-phenylpyrazole) or R-pypy (2,3'-bipyridine); in addition, inductive effects were taken into account by substitution with the R groups (R = H, F or CF3). Then, compounds with HOMO-LUMO energy gaps from 2.76 to 3.54 eV were obtained, in addition to emission energies in the range of 438 to 597 nm. The emission deactivation pathways confirm the presence of metal-to-ligand transitions in all the complexes, which allow the strong spin-orbit coupling effects, and then improving the luminescence performance. However, the coupling with ligand and metal centered excited states was observed for the blue-shifted emitters, which could result in a decrease of the luminescence efficiencies. Furthermore, ionization potentials, electron affinities and reorganization energies (for holes and electrons) were obtained to account for the injection and transport properties of all the complexes in electroluminescent devices. PMID:26449274

  17. Delayed electroluminescence of doped fluorescent aingle layer organic light-emitting devices.

    PubMed

    Zhang, Yanfei; Zhao, Suling; Xu, Zheng; Kong, Chao

    2014-05-01

    Doped single-layer polymer OLEDs consisting of PVK: (TPB, C545T, Rubrene or DCJTB) were prepared. By applying high-frequency electric pulse of 0.5 micros pulse width to each device, we observed various delayed electroluminescence after withdrawing the forward bias. The order of magnitude of fitting life time ranges from hundreds of nanoseconds to several milliseconds. Current density-voltage and brightness-voltage characteristics reveals charge trapped on guest sites initially before released. Subsequently, the recombination of these trapped charges is strongly involved in the origin of delayed electroluminescence. PMID:24734573

  18. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    SciTech Connect

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  19. Organic electroluminescent devices and method for improving energy efficiency and optical stability thereof

    DOEpatents

    Heller, Christian Maria

    2004-04-27

    An organic electroluminescent device ("OELD") has a controllable brightness, an improved energy efficiency, and stable optical output at low brightness. The OELD is activated with a series of voltage pulses, each of which has a maximum voltage value that corresponds to the maximum power efficiency when the OELD is activated. The frequency of the pulses, or the duty cycle, or both are chosen to provide the desired average brightness.

  20. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound state energies. The calculations were then applied to a new superlattice structure, the variablly spaced superlattice energy filter, (VSSEP) which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

  1. The electro-optical behavior of SrS:Ce electroluminescent devices under photonic excitation

    NASA Astrophysics Data System (ADS)

    Benoit, J.; Barthou, C.; Benalloul, P.; Polamo, K.

    2000-01-01

    The electro-optical behavior of the SrS:Ce electroluminescent devices under pulsed photonic excitation in the lower energy absorption band of Ce3+ was analyzed below the electroluminescence threshold voltage for a rectangular electric pulse. The photoluminescence quenching due to the ionization of the Ce3+ ions under the electrical field increases with the applied voltage (40% at the threshold). Delocalization of involved electrons is responsible for emissions at the trailing edge of the electric pulse and for emissions during the following pulse. These emissions do not restore the level of the photoluminescence without applied voltage. These different emissions allow detailed study of energy trap levels for each insulator/SrS interface. An interpretation of the photoluminescence quenching is proposed

  2. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    NASA Astrophysics Data System (ADS)

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-05-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT) however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices.

  3. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    PubMed Central

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  4. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices.

    PubMed

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  5. Electroluminescence efficiencies of erbium in silicon-based hosts

    SciTech Connect

    Cueff, Sébastien E-mail: christophe.labbe@ensicaen.fr; Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas; Kurvits, Jonathan A.; Zia, Rashid; Rizk, Richard; Labbé, Christophe E-mail: christophe.labbe@ensicaen.fr

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  6. Solution-Processable Silicon Phthalocyanines in Electroluminescent and Photovoltaic Devices.

    PubMed

    Zysman-Colman, Eli; Ghosh, Sanjay S; Xie, Guohua; Varghese, Shinto; Chowdhury, Mithun; Sharma, Nidhi; Cordes, David B; Slawin, Alexandra M Z; Samuel, Ifor D W

    2016-04-13

    Phthalocyanines and their main group and metal complexes are important classes of organic semiconductor materials but are usually highly insoluble and so frequently need to be processed by vacuum deposition in devices. We report two highly soluble silicon phthalocyanine (SiPc) diester compounds and demonstrate their potential as organic semiconductor materials. Near-infrared (λ(EL) = 698-709 nm) solution-processed organic light-emitting diodes (OLEDs) were fabricated and exhibited external quantum efficiencies (EQEs) of up to 1.4%. Binary bulk heterojunction solar cells employing P3HT or PTB7 as the donor and the SiPc as the acceptor provided power conversion efficiencies (PCE) of up to 2.7% under simulated solar illumination. Our results show that soluble SiPcs are promising materials for organic electronics.

  7. Solution-Processable Silicon Phthalocyanines in Electroluminescent and Photovoltaic Devices

    PubMed Central

    2016-01-01

    Phthalocyanines and their main group and metal complexes are important classes of organic semiconductor materials but are usually highly insoluble and so frequently need to be processed by vacuum deposition in devices. We report two highly soluble silicon phthalocyanine (SiPc) diester compounds and demonstrate their potential as organic semiconductor materials. Near-infrared (λEL = 698–709 nm) solution-processed organic light-emitting diodes (OLEDs) were fabricated and exhibited external quantum efficiencies (EQEs) of up to 1.4%. Binary bulk heterojunction solar cells employing P3HT or PTB7 as the donor and the SiPc as the acceptor provided power conversion efficiencies (PCE) of up to 2.7% under simulated solar illumination. Our results show that soluble SiPcs are promising materials for organic electronics. PMID:26990151

  8. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  9. Development of electroluminescence based pressure-sensitive paint system.

    PubMed

    Iijima, Yoshimi; Sakaue, Hirotaka

    2011-01-01

    We introduce a pressure-sensitive paint (PSP) measurement system based on an electroluminescence (EL) as a surface illumination. This consists of an inorganic EL as the illumination, a short-pass filter, and a platinum-porphyrin based PSP. The short-pass filter, which passes below 500 nm, was used to separate an overlay of the EL illumination and the PSP emission. The EL shows an opposite temperature dependency to that of the PSP. It gives a uniform illumination compared to that of a point illumination source such as a xenon lamp. Under atmospheric conditions, the resultant EL-PSP system reduces the temperature dependency by 54% compared to that of a conventional PSP system. An application of the EL-PSP system to a sonic jet impingement shows that the system demonstrated its reduction of the temperature dependency by 75% in a pressure measurement and reduces an image misalignment error.

  10. Development of electroluminescence based pressure-sensitive paint system

    NASA Astrophysics Data System (ADS)

    Iijima, Yoshimi; Sakaue, Hirotaka

    2011-01-01

    We introduce a pressure-sensitive paint (PSP) measurement system based on an electroluminescence (EL) as a surface illumination. This consists of an inorganic EL as the illumination, a short-pass filter, and a platinum-porphyrin based PSP. The short-pass filter, which passes below 500 nm, was used to separate an overlay of the EL illumination and the PSP emission. The EL shows an opposite temperature dependency to that of the PSP. It gives a uniform illumination compared to that of a point illumination source such as a xenon lamp. Under atmospheric conditions, the resultant EL-PSP system reduces the temperature dependency by 54% compared to that of a conventional PSP system. An application of the EL-PSP system to a sonic jet impingement shows that the system demonstrated its reduction of the temperature dependency by 75% in a pressure measurement and reduces an image misalignment error.

  11. White light organic electroluminescent device using a naphthalimide derivative as the emitter layer

    NASA Astrophysics Data System (ADS)

    Chu, Guoqiang; Liu, Xingyuan; Liu, Yun; Wu, Dongjiang; Wang, Lijun

    2000-11-01

    The electroluminescent (EL) device was fabricated using a naphthalimide derivative, N-Propyl-4-acetylamino-1,8- naphthalimide (PAAN), as the emitter layer, N,N'-diphenyl- N,N'-bis(3-methyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) as the hole transport layer, ITO and Al as the anode and cathode, respectively. The EL emission of the device showed a white light. There are two peaks located at 491 nm and 669 nm in the EL spectrum. The emission peak at 491 nm comes from PAAN, while the emission peak at 669 nm results from neither the emission of PAAN molecule nor that of TPD molecule. It showed that the showing up of the new emission peak in the EL spectrum of the device is due to the exciplex formation at the PAAN and TPD bilayer interface.

  12. A diaminomaleonitrile derivative as a new dopant for red-light-emitting electroluminescent device

    NASA Astrophysics Data System (ADS)

    Wang, Xiaodong; Sakuratani, Yuhki; Sone, Hiroyuki; Tanaka, Kuniaki; Miyata, Seizo; Usui, Hiroaki

    2003-08-01

    We have synthesized a novel dye material of N,N'-bis[4-(N,N'-diphenylamino)-benzalidene] diaminomaleonitrile (BAP), as a dopant for red-light-emitting electroluminescent (EL) device. We fabricated several types of EL devices by doping BAP into tris(8-quinoline) aluminium (Alq3) as the light-emitting layer, and investigated their EL properties. BAP has symmetric conjugated structure and could give sharp and intense photoluminescence in the red region. When BAP was doped into Alq3, the device gave bright red EL with the maximum intensity of about 6700 cd m-2 together with the contribution of Alq3 emission. By introducing rubrene as an assist-dopant, the maximum EL intensity increased to 15 700 cd m-2 when the bias voltage was 14.5 V. However, complete energy transfer to BAP has not been achieved.

  13. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOEpatents

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  14. Microstructure and electroluminescent performance of chemical vapor deposited zinc sulfide doped with manganese films for integration in thin film electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Topol, Anna Wanda

    Zinc sulfide (ZnS) doped with manganese (Mn), ZnS:Mn, is widely recognized as the brightest and most effective electroluminescent (EL) phosphor used in current thin film electroluminescent (TFEL) devices. ZnS acts as a host lattice for the luminescent activator, Mn, leading to a highly efficient yellow-orange EL emission, and resulting in a wide array of applications in monochrome, multi-color and full color displays. Although this wide band dap (3.7 eV) material can be prepared by several deposition techniques, the chemical vapor deposition (CVD) is the most promising for TFEL applications in terms of viable deposition rates, high thickness and composition uniformity, and excellent yield over large area panels. This study describes the development and optimization of a CVD ZnS:Mn process using diethylzinc [(C2H5)2Zn, DEZ], di-pi-cyclopentadienylmanganese [(C5H5)2Mn, CPMn], and hydrogen sulfide [H2S] as the chemical sources for, respectively, Zn, Mn, and S. The effects of key deposition parameters on resulting Film microstructure and performance are discussed, primarily in the context of identifying an optimized process window for best electroluminescence behavior. In particular, substrate temperature was observed to play a key role in the formation of high quality crystalline ZnS:Mn films leading to improved brightness and EL efficiency. Further investigations of the influence of temperature treatment on the structural characteristics and EL performance of the CVD ZnS:Mn film were carried out. In this study, the influence of post-deposition annealing both in-situ and ex-situ annealing processes, on chemical, structural, and electroluminescent characteristics of the phosphor layer are described. The material properties of the employed dielectric are among the key factors determining the performance, stability and reliability of the TFEL display and therefore, the choice of dielectric material for use in ACTFEL displays is crucial. In addition, the luminous

  15. Self-Assembly of Rod-Coil Block Copolymers and Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Yuefei; Ma, Biwu; Segalman, Rachel A.

    2008-11-18

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  16. Self-Assembly of Rod-Coil Block Copolymers And Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Y.; Ma, B.; Segalman, R.A.

    2009-05-26

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  17. Colloidal electroluminescence: Novel routes to controlled emission of organic light emitting diode devices

    NASA Astrophysics Data System (ADS)

    Huebner, Christopher Fletcher

    In recent years the importance of the organic light emitting diode (OLED) has grown immensely, and the past two decades have seen ongoing and exhaustive research in organic routes to solid state lighting, wherein electricity is directly converted into emitted light through an excited state relaxation mechanism. The benefits of incorporating polymeric and small molecule materials into solid state lighting devices include high efficiences, low production costs, amenability to large-scale production and devices, reduced environmental impact and low energy consumption. Herein are presented novel routes to materials engineering and preparation, device fabrication and emission tailoring through the abilility to form a variety of polymeric and small molecule materials into aqueously dispersed semiconductive electroluminescent (EL) colloids. Compartmentalization of the emissive and semiconductive species into colloidal particles affords the ability to systematically control energy transfer processes that occur in light emitting devices. Energy transfer can occur through a Coulombic (Forster) or an electronic (Dexter) process, each needing several conditions to be met for the transfer to occur, however common to both are spectral and proximal characteristics. In this work, energy transfer will be simultaneously exploited and inhibited through the creation of EL colloidal particles which can be combined in a dispersion or thin layer in order to tailor the light emission for a variety of applications.

  18. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  19. Excitation and deexcitation of ac-driven thin-film ZnS electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Sohn, S. H.; Hamakawa, Y.

    1992-09-01

    Theoretical formulas accounting for the excitation and deexcitation processes of the alternating current-driven thin-film electroluminescent devices have been obtained, which include both the impact excitation and the energy-transfer mechanisms. The empirical equations for the conduction current duration time and the luminescent decay time related to the tunneling emission of electrons at the interface, the capture of holes in traps, and the light emission of luminescent centers lead to the analytical formulas for the transferred charge ΔQ, the luminance L, and other quantities of physical interest as a function of the electric field. The estimates for ΔQ and L in ZnS:Mn and ZnS:TbF3 devices have been made on the basis of Wolff's distribution function and found to be in good agreement with the experimental data. From the estimated results, it is found that the energy-transfer mechanism depends on various material parameters and drive conditions, and that it plays a role in improvement of the luminance in the low-electric-field region. In the high-electric-field region of interest, the energy transfer from Cu-related sensitizers to luminescent centers in ZnS:Mn and ZnS:TbF3 devices yields an increase of luminance by a factor of about 1.5 and 3, respectively.

  20. Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

    NASA Astrophysics Data System (ADS)

    Dimitrova, V. I.; Van Patten, P. G.; Richardson, H. H.; Kordesch, M. E.

    2000-07-01

    Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN, ˜200 nm thick, were grown on indium-tin-oxide/aluminum-titanium-oxide/glass substrates using rf magnetron sputtering in a nitrogen atmosphere. The turn-on voltage was found to be around 70-80 and 100 V for ACTFEL devices without and with a top insulator layer. Sharp emission lines in the visible region were observed which correspond to known transitions of the Er3+ ion. Temperature-dependent cathodoluminescence studies corroborate the EL results, and show that optimum device performance is attained near 300 K.

  1. Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaro; Nakamura, Yoshiaki; Kuboya, Shigeyuki; Katayama, Ryuji; Onabe, Kentaro; Ichikawa, Masakazu

    2011-08-01

    Novel system equipped with conductive optical fiber probe scanning tunneling microscope (STM) and bipolar sample holder is a powerful tool to characterize light-emitting devices by several STM-based techniques at the same sample position, which can realize photoluminescence (PL), cathodoluminescence (CL), electroluminescence (EL), and electron beam induced current (EBIC) measurements with higher spatial resolutions than conventional techniques. In this study, we developed a STM-CL/EL system which combines STM-CL technique for high CL excitation power and high spatial resolution and STM-EL technique for local EL collection. We demonstrated spatially resolved STM-CL/EL spectroscopy of GaAs/AlGaAs heterostructure (110) cross-sections.

  2. Air-stable operation of transparent, colloidal quantum dot based LEDs with a unipolar device architecture.

    PubMed

    Wood, Vanessa; Panzer, Matthew J; Caruge, Jean-Michel; Halpert, Jonathan E; Bawendi, Moungi G; Bulović, Vladimir

    2010-01-01

    We report a novel unipolar light-emitting device architecture that operates using direct-current, field-driven electroluminescence of colloidally synthesized quantum dots (QDs). This device architecture, which is based only on transparent ceramics and QDs, enables emission from different color QDs and, for the first time, constant QD electroluminescence during extended operation in air, unpackaged.

  3. Alternating-current thin-film electroluminescent device fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Baukol, Beau Alexander

    The goals of this thesis are to provide an improved understanding of luminescent materials, and to exploit their properties to achieve bright, efficient, and manufacturable red, green, and blue (RGB) phosphors for use in full-color flat-panel displays. A high-luminance, high-efficiency, full-color alternating-current thin-film electroluminescent (ACTFEL) phosphor system, capable of being processed at temperatures below the glass substrate melting temperature, has been developed through the use of source layer diffusion doping (SLDD) of atomic layer epitaxy (ALE) deposited SrS thin-films. The development of ACTFEL phosphors has also been advanced through the exploration of alternate phosphor materials, such as SrxCa 1-xS:Eu,Cu and (Ba.Zn)S:Mn. This thesis offers new insight into the nature of ACTFEL device operation, especially SrS:Cu ACTFEL devices. A comparison of "EL" thermal quenching trends for evaporated ZnS:Mn, ALE ZnS:Mn, ALE SrS:Ce, sputtered SrS:Cu,Ag, and sputtered multi-layer SrS:Cu,Ag/SrS:Ce ACTFEL devices is presented. ZnS:Mn ACTFEL devices exhibit the least amount of EL thermal quenching, which is attributed to non-radiative recombination. SrS:Cu and SrS:Cu,Ag ACTFEL devices possess the greatest amount of thermal quenching, which is primarily EL thermal quenching. The extent of EL thermal quenching is significantly reduced in a multi-layer SrS:Cu,Ag/SrS:Ce ACTFEL device, compared to that of a single-layer SrS:Cu or SrS:Cu,Ag ACTFEL device. The operation of SrS:Cu is examined as a function of temperature; the space charge density is found to increase with temperature up to ˜250 K with an activation energy of 0.02 eV. The space charge density in SrS:Cu ACTFEL devices is estimated as ˜1.8 x 1016, which yields estimates of the cathode phosphor field and the interfacial trap depth of ˜1.3 MV/cm and ˜0.73 eV, respectively.

  4. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    SciTech Connect

    Wang, Hanyu; Wang, Xu; Yu, Junsheng E-mail: jsyu@uestc.edu.cn; Zhou, Jie; Lu, Zhiyun E-mail: jsyu@uestc.edu.cn

    2014-08-11

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-(3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy)-2- (4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 10{sup 11} Jones at −3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm{sup 2}, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m{sup 2}. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  5. Mechanism of hot electron electroluminescence in GaN-based transistors

    NASA Astrophysics Data System (ADS)

    Brazzini, Tommaso; Sun, Huarui; Sarti, Francesco; Pomeroy, James W.; Hodges, Chris; Gurioli, Massimo; Vinattieri, Anna; Uren, Michael J.; Kuball, Martin

    2016-11-01

    The nature of hot electron electroluminescence (EL) in AlGaN/GaN high electron mobility transistors is studied and attributed to Bremsstrahlung. The spectral distribution has been corrected, for the first time, for interference effects due to the multilayered device structure, and this was shown to be crucial for the correct interpretation of the data, avoiding artefacts in the spectrum and misinterpretation of the results. An analytical expression for the spectral distribution of emitted light is derived assuming Bremsstrahlung as the only origin and compared to the simplified exponential model for the high energy tail commonly used for electron temperature extraction: the electron temperature obtained results about 20% lower compared to the approximated exponential model. Comparison of EL intensity for devices from different wafers illustrated the dependence of EL intensity on the material quality. The polarization of electroluminescence also confirms Bremsstrahlung as the dominant origin of the light emitted, ruling out other possible main mechanisms.

  6. Electroluminescence of quantum-dash-based quantum cascade laser structures

    SciTech Connect

    Liverini, V.; Bismuto, A.; Nevou, L.; Beck, M.; Faist, J.

    2011-12-23

    We developed two mid-infrared quantum cascade structures based on InAs quantum dashes. The dashes were embedded either in AlInGaAs lattice-matched to InP or in tensile-strained AlInAs. The devices emit between 7 and 11 {mu}m and are a step forward in the development of quantum cascade lasers based on 3-D confined active regions.

  7. Pyrene based conjugated materials: synthesis, characterization and electroluminescent properties.

    PubMed

    Salunke, Jagadish K; Sonar, Prashant; Wong, F L; Roy, V A L; Lee, C S; Wadgaonkar, Prakash P

    2014-11-14

    In this work, three novel pyrene cored small conjugated molecules, namely 1,3,6,8-tetrakis(6-(octyloxy)naphthalene-2-yl)pyrene (PY-1), 1,3,6,8-tetrakis((E)-2-(6-(n-octyloxy)naphthalene-2-yl)vinyl)pyrene (PY-2) and 1,3,6,8-tetrakis((6-(n-octyloxy)naphthalene-2-yl)ethynyl)pyrene (PY-3) have been synthesized by Suzuki, heck and Sonogashira organometallic coupling reactions, respectively. The effects of single, double and triple bonds on their optical, electrochemical, and thermal properties are studied in detail. These are all materials fluorescent and they have been used in organic light-emitting diodes (OLEDs) and their electroluminescent properties have been studied.

  8. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  9. Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

    NASA Astrophysics Data System (ADS)

    Ishimura, Takuyoshi; Matsumoto, Hironaga

    2014-04-01

    Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

  10. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    NASA Astrophysics Data System (ADS)

    Forneris, J.; Battiato, A.; Gatto Monticone, D.; Picollo, F.; Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I. P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P.; Verona, C.; Verona Rinati, G.; Olivero, P.

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He+ micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV0, λZPL = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λZPL = 536.3 nm, λZPL = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  11. Electroluminescent ZnS:Mn films prepared by an MOCVD method based on dithiocarbamate precursors

    NASA Astrophysics Data System (ADS)

    Zavyalova, L. V.; Beletski, A. I.; Svechnikov, G. S.

    1999-05-01

    It is shown that electroluminescent ZnS:Mn films with luminance more than 0268-1242/14/5/013/img6 and luminous efficiency 0268-1242/14/5/013/img7 can be obtained by low-temperature deposition from Mn and Zn dithiocarbamates; subsequent thermal treatment of these films is not necessary. Starting materials were deposited on the substrate heated to a temperature of 220-0268-1242/14/5/013/img8C by spraying organic solution in air at atmospheric pressure. As a result homogeneous polycrystalline layers of ZnS:Mn with a growth rate of 60-0268-1242/14/5/013/img9 have been obtained. The electroluminescent characteristics of the thin films and structures based on various preparation and excitation conditions are presented. The possibility of application of these films as a planar light source is discussed.

  12. Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

    SciTech Connect

    Singh, Anju; Vishwakarma, H. L.

    2015-07-31

    In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the length of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  13. Reduction of molecular aggregation and its application to the high-performance blue perylene-doped organic electroluminescent device

    NASA Astrophysics Data System (ADS)

    Mi, B. X.; Gao, Z. Q.; Lee, C. S.; Lee, S. T.; Kwong, H. L.; Wong, N. B.

    1999-12-01

    A nonplanar derivative of perylene, 2,5,8,11-tetra-tertbutylperylene (TBPe), was synthesized via the Friedel-Crafts alkylation reaction. Electroluminescent (EL) devices were made using TBPe or perylene as a dopant in bis(2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(III) and their EL performance was compared. Similar to the device doped with the parent perylene molecule, the device doped with TBPe also emitted strongly in the blue. As the concentration of TBPe increased from 1% to 5%, the color coordinates in CIE 1931 chromaticity of the TBPe-doped device changed only slightly from (0.168,0.273) to (0.175,0.273), whereas the perylene-doped device exhibited a much larger shift from (0.165,0.196) to (0.178,0.252). The constancy of EL color and efficiency with respect to TBPe dopant concentration is attributable to diminishing molecular aggregation in the nonplanar perylene derivative, TBPe, due to the steric hindrance of the tert-butyl groups.

  14. Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Lehmann, J.; Prucnal, S.; Sun, J. M.; Helm, M.; Skorupa, W.

    2010-02-01

    The physical limits of downscaling the SiO2 thickness of rare earth implanted metal-oxynitride-oxide-semiconductor-based light emitters are explored by investigating the drop down of the electroluminescence power efficiency with decreasing SiO2 thickness of Tb-implanted devices. It will be experimentally shown that there is a dark zone with an extension of about 20 nm behind the injecting interface in which the hot electrons have not yet gained enough kinetic energy in order to excite the Tb3+ luminescence centers. In addition, replacing the host matrix SiO2 by SiON results in a decrease of power efficiency by two orders of magnitude what is consistent with the experimental data about the hot energy distribution in these media.

  15. Effect of multilayered SrSSrS: CeSrS phosphor prepared by multi-source deposition method on the thin film electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Lee, Y. H.; Kim, D. H.; Ju, B. K.; Yeom, T. H.; S Hahn, T.; Oh, M. H.; Choh, S. H.

    1995-02-01

    Single-layer SrS: Ce and multilayer SrSSrS: CeSrS thin films have been grown by multi-source deposition method. The X-ray diffraction patterns of the films showed the typical diffraction patterns of the cubic SrS powder. Single-layer SrS: Ce thin films exhibited sulfur deficiency and their fluorescence spectra showed a broad red emission peak. The multilayer SrSSrS: CeSrS electroluminescent device showed nearly stoichiometric composition and an electroluminescent device made of these layers displayed a green-emission intensified spectrum with peaks located at 493 and 523 nm. A distinct S-shaped pinching effect in the transferred charge versus applied voltage characteristics, similar to a hysteretic electroluminescent device, was observed in multilayer device. We interpret that the separation of the light-emitting SrS: Ce layer from the two interfacial SrS layers and the resulting nonuniform space charge in the middle SrS: Ce layer are responsible for the observed enhancement of luminance through the intensified hysteretic effect in the multilayer structure.

  16. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    PubMed Central

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-01-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A−1 and 40.6 cd A−1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A−1 and 25.4 cd A−1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

  17. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    NASA Astrophysics Data System (ADS)

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-06-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A‑1 and 40.6 cd A‑1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A‑1 and 25.4 cd A‑1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays.

  18. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells.

    PubMed

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-01-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A(-1) and 40.6 cd A(-1), respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A(-1) and 25.4 cd A(-1) for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

  19. Improved efficiency for green and red emitting electroluminescent devices using the same cohost composed of 9,10-di(2-naphthyl) anthracene and tris-(8-hydroxyquinolinato) aluminum

    NASA Astrophysics Data System (ADS)

    Zhu, Jianzhuo; Li, Wenlian; Chu, Bei; Yang, Dongfang; Zhang, Guang; Liu, Huihui; Chen, Yiren; Su, Zisheng; Wang, Junbo; Wu, Shuanghong

    2009-12-01

    We demonstrate highly efficient green and red fluorescence dyes-doped electroluminescent devices using cohost strategy. The cohost system is composed of tris-(8-hydroxyquinolinato) aluminum (Alq) and 9,10-di(2-naphthyl) anthracene (ADN). The maximum current efficiencies are increased by 54% and 104% for green and red devices by optimizing the ratio between ADN and Alq in the cohost compared to the conventional Alq single-host devices, respectively. We attribute the improvement of efficiencies to balanced hole and electron injection into the emitting layer, the enlarged width of recombination region and the multiple emission processes.

  20. Electro-Luminescence based Pressure-Sensitive Paint System for Unsteady Flow Field Measurements

    NASA Astrophysics Data System (ADS)

    Iijima, Yoshimi; Sakaue, Hirotaka

    2011-11-01

    Electro-luminescence (EL) based pressure-sensitive paint (PSP) system is developed for capturing unsteady flow fields. It has advantages in uniform distribution in the illumination without remotely apply the illumination source from the testing object. The resultant system can be applied directly onto a testing object surface. It consists of an inorganic EL and a PSP. The EL emits blue illumination uniformly applied onto the PSP layer. Because of a sheet illumination, the EL gives uniform distribution, while a point illumination gives a spot in illumination. The PSP is developed to provide a fast response to a change in pressure. It uses a porous particle and a polymer to create porous-polymer PSP. The response time characterization of the developed system is included in the presentation. The developed system is applied to an unsteady flow field, such as a sound field in a resonance tube.

  1. Origin of Sub-Bandgap Electroluminescence in Organic Light-Emitting Diodes.

    PubMed

    Xiang, Chaoyu; Peng, Cheng; Chen, Ying; So, Franky

    2015-10-28

    Sub-bandgap electroluminescence in organic light emitting diodes is a phenomenon in which the electroluminescence turn-on voltage is lower than the bandgap voltage of the emitter. Based on the results of transient electroluminescence (EL) and photoluminescence and electroabsorption spectroscopy measurements, it is concluded that in rubrene/C60 devices, charge transfer excitons are generated at the rubrene/C60 interface under sub-bandgap driving conditions, leading to the formation of triplet excitons, and sub-bandgap EL is the result of the subsequent triplet-triplet annihilation process. PMID:26312783

  2. Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Lucas, Bruno; Rammal, Wassim; El Amrani, Aumeur; Moliton, André; Séguy, Isabelle

    2006-04-01

    In this study, we presented high-performance flexible organic light-emitting diodes (FOLEDs); to do so, we prepared indium-tin oxide (ITO) thin layers by ion beam sputtering (IBS) on polyethylene terephtalate (PET) substrates in soft low temperature conditions. The IBS technology seems well adapted to us to adjust the conduction level of the interface films to the one of the various organic materials making up the fabrication processes of the organic optoelectronic components; moreover this technique does not require a high substrate temperature or an annealing after ITO deposition to crystallize the obtained layers. Because of the great number of deposition parameters (oxygen flow, substrate temperature, deposition rate...) playing interdependent roles and strongly influencing the electrical, optical and structural properties of the layers, we optimized the effects of these different parameters separately by using electrical and optical characterizations as well as X-ray diffraction analyses. The performances of FOLEDs on PET substrate with different ITO thicknesses were investigated and compared to the ones of a conventional organic light-emitting diode realized on glass substrate and according to the same device configuration.

  3. Organic electroluminescent sensor for pressure measurement.

    PubMed

    Matsuda, Yu; Ueno, Kaori; Yamaguchi, Hiroki; Egami, Yasuhiro; Niimi, Tomohide

    2012-10-16

    We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS) based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED) with phosphorescent dyes whose phosphorescence can be quenched by oxygenmolecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II) octaethylporphine (PtOEP) doped into poly(vinylcarbazole) (PVK) as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate) (PEDOT:PSS) as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP), which is an optical pressure sensor based on photoluminescence.

  4. Organic Electroluminescent Sensor for Pressure Measurement

    PubMed Central

    Matsuda, Yu; Ueno, Kaori; Yamaguchi, Hiroki; Egami, Yasuhiro; Niimi, Tomohide

    2012-01-01

    We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS) based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED) with phosphorescent dyes whose phosphorescence can be quenched by oxygen molecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II) octaethylporphine (PtOEP) doped into poly(vinylcarbazole) (PVK) as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate) (PEDOT:PSS) as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP), which is an optical pressure sensor based on photoluminescence. PMID:23202027

  5. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  6. Electroluminescence of Halogen Complexes with Monovalent Copper: OLED Devices and DFT Modeling

    NASA Astrophysics Data System (ADS)

    Valiev, R. R.; Minaev, B. F.; Gadirov, R. M.; Nikonova, E. N.; Solodova, T. A.; Nikonov, S. Yu.; Bushuev, M. B.; Kopylova, T. N.

    2016-01-01

    Spectroscopic characteristics of complexes of Cu[I] ion with halogens synthesized by the TDDFT/CAM-B3LYP method are studied. It is shown that S0 → S1 and S0 → T1 electronic transitions are excitations with charge transfer. In this case, the electronic transitions proceed from the HOMO, HOMO-1 and HOMO-2 localized on halogen atoms to the LUMO localized on a ligand. The matrix elements of spin-orbit interaction are calculated using the single-electron operator (HSO). Based on these compounds, the organic light emitting diodes have been created. Their current-voltage and current-brightness characteristics are investigated.

  7. Analysis Of Electroluminescent Display Devices For Stereographic Display Of Video Images

    NASA Astrophysics Data System (ADS)

    Balasubramanian, K.

    1987-04-01

    The display of the sectional images of the object in a modified trigun shadow mask picture tube and in modified Forgue's picture tube are described. Volumetric display of images in three picture tubes and in large screen laser scan display medium are analysed. Further, the volumetric display of sectional images in gas discharge display metrices and LED metrics are examined for faithful reconstruction of 3D images. Also, a direct eye contact viewing system for stereographic vision is illustrated. An autostereoscopic method of displaying images in a LED based lenticular lens screen is also analysed.

  8. White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

    PubMed

    Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

    2016-03-01

    In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

  9. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    PubMed

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

  10. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    SciTech Connect

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Goano, Michele Bertazzi, Francesco; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  11. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    NASA Astrophysics Data System (ADS)

    Calciati, Marco; Goano, Michele; Bertazzi, Francesco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Bellotti, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-01

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10-30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at

  12. Ultraviolet-light-emitting AlN:Gd thin-film electroluminescence device using an energy transfer from Gd3+ ions to N2 molecules

    NASA Astrophysics Data System (ADS)

    Toyama, Toshihiko; Ota, Jun; Adachi, Daisuke; Niioka, Yasumasa; Lee, Dong-Hun; Okamoto, Hiroaki

    2009-04-01

    An ultraviolet (UV)-light-emitting AlN:Gd thin-film electroluminescence device (TFELD) was demonstrated for application to flat-panel lighting. AlN:Gd thin films were deposited by rf magnetron sputtering at 200 °C and applied to an ac-voltage-driven TFELD with a double-insulating structure as an emission layer. UV-light emission was observed over a threshold voltage of 270 V for a 5 kHz sinusoidal ac voltage. Electroluminescence (EL) spectra were compared with photoluminescence and cathodoluminescence spectra of AlN:Gd originating from Gd3+ P6j→S87/2 transitions and with an emission spectrum of the second positive system (C3Πu→B3Πg) of N2 molecules. As a result, an energy transfer from Gd3+ P6j→S87/2 to N2 C3Πu→B3Πg is discussed as a likely mechanism for the UV EL. Finally, a preliminary result, associated with the conversion from UV light into blue-green light via a phosphor, is demonstrated for the color tunability of the TFELD.

  13. Photo- and electroluminescent properties of zinc(II) complexes with tetradentate Schiff bases, derivatives of salicylic aldehyde

    NASA Astrophysics Data System (ADS)

    Vashchenko, A. A.; Lepnev, L. S.; Vitukhnovskii, A. G.; Kotova, O. V.; Eliseeva, S. V.; Kuz'mina, N. P.

    2010-03-01

    It is studied how the introduction of various substituents into the composition of organic ligands affects the photoluminescence spectra of new zinc(II) complexes with tetradentate Schiff bases H2L (derivatives of salicylic aldehyde (H2SAL1, H2SAL2) and o-vanillin (H2MO1, H2MO2) with ethylenediamine and o-phenylenediamine) in the form of bulk solids and thin films. It is demonstrated that the emission spectra of bulk solid complexes without o-phenylenediamine bridges (ZnSAL1 and ZnMO1) contain additional long-wavelength bands compared to the spectra of corresponding thin films. In the case of films obtained from [ZnSAL1]2 dimer complexes, the long-wavelength band is dominant. At the same time, the photoluminescence spectra of ZnSAL2 and ZnMO2 complexes with o-phenylenediamine bridges are similar in the case of solid samples and thin films. The electroluminescent properties of organic light-emitting diodes (OLEDs) with the ITO/α-NPD/ZnL/Ca:Al structure are studied. The bathochromic shift of the electroluminescence peaks of OLEDs with respect to the photoluminescence spectra of bulk solid samples and thin films is probably related to the formation of exciplexes at the α-NPD/ZnL interface. The electroluminescence spectra of OLEDs based on [ZnSAL1]2 show a hypsochromic shift of the emission maximum, which can be caused by a shift of the recombination region into the α-NPD layer.

  14. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    NASA Astrophysics Data System (ADS)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  15. Magnetically modulated electroluminescence from hybrid organic/inorganic light-emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Pang, Zhiyong; Baniya, Sangita; Zhang, Chuang; Sun, Dali; Vardeny, Z. Valy

    2016-03-01

    We report room temperature magnetically modulated electroluminescence from a hybrid organic/inorganic light-emitting diode (h-OLED), in which an inorganic magnetic tunnel junction (MTJ) with large room temperature magnetoresistance is coupled to an N,N,N ',N '-Tetrakis(4-methoxyphenyl)benzidine (MeO-TPD): tris-[3-(3-pyridyl)mesityl]borane (3TPYMB) [D-A] based OLED that shows thermally activated delayed luminescence. The exciplex-based OLED provides two spin-mixing channels: upper energy channel of polaron pairs and lower energy channel of exciplexes. In operation, the large resistance mismatch between the MTJ and OLED components is suppressed due to the non-linear I-V characteristic of the OLED. This leads to enhanced giant magneto-electroluminescence (MEL) at room temperature. We measured MEL of ~ 75% at ambient conditions. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  16. Electroluminescent layers based on ZnS:Cu deposited into matrices of porous anodic Al2O3

    NASA Astrophysics Data System (ADS)

    Valeev, R. G.; Petukhov, D. I.; Chukavin, A. I.; Bel'tyukov, A. N.

    2016-02-01

    It is suggested to use a new nanocomposite material—nanostructures of copper-doped zinc sulfide in a matrix of porous aluminum oxide—as a light-emitting layer of electroluminescent sources of light. The material was deposited by thermal evaporation in a vacuum. The microstructure of the layers, impurity distribution in the electroluminescent-phosphor layer, and electroluminescence spectra at various copper concentrations in ZnS:Cu were studied.

  17. A novel violet/blue light-emitting device based on Ce2Si2O7

    PubMed Central

    Li, Ling; Wang, Shenwei; Mu, Guangyao; Yin, Xue; Ou, Kai; Yi, Lixin

    2015-01-01

    Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f–5d transitions of the Ce3+ ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed. PMID:26564241

  18. A novel violet/blue light-emitting device based on Ce2Si2O7.

    PubMed

    Li, Ling; Wang, Shenwei; Mu, Guangyao; Yin, Xue; Ou, Kai; Yi, Lixin

    2015-01-01

    Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f-5d transitions of the Ce(3+) ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed. PMID:26564241

  19. Alternating current driven electroluminescence from ZnSe/ZnS:Mn/ZnS nanocrystals.

    PubMed

    Wood, Vanessa; Halpert, Jonathan E; Panzer, Matthew J; Bawendi, Moungi G; Bulović, Vladimir

    2009-06-01

    We present a novel technique for room temperature, solution-based fabrication of alternating current thin-film electroluminescent (AC-TFEL) devices using phosphor-doped nanocrystals. Synthesis for stable ZnSe/ZnS:Mn/ZnS nanocrystals that exhibit a quantum yield of 65 +/- 5% is outlined, and their electroluminescence is demonstrated in structures consisting of only wide band gap ceramic layers. Both the nanocrystal and the ceramic films have minimal absorption across the visible light spectrum, enabling us to demonstrate transparent AC-TFEL devices.

  20. ELECTROLUMINESCENT MATERIAL FOR FLAT PANEL DISPLAY

    SciTech Connect

    Smith, D.B.

    2000-11-13

    The purpose of this Cooperative Research and Development Agreement (CRADA) was to develop a new-generation electroluminescent (EL) material for flat panel displays and related applications by using unique and complementary research capabilities at Oak Ridge National Laboratory and OSRAM Sylvania, Inc. The goal was to produce an EL material with a luminance 10 times greater than conventional EL phosphors. An EL material with this increased luminance would have immediate applications for flat panel display devices (e.g., backlighting for liquid-crystal diodes) and for EL lamp technology. OSRAM Sylvania proposed that increased EL phosphor luminance could be obtained by creating composite EL materials capable of alignment under an applied electric field and capable of concentrating the applied electric field. Oak Ridge National Laboratory used pulsed laser deposition as a method for making these composite EL materials. The materials were evaluated for electroluminescence at laboratory facilities at OSRAM Sylvania, Inc. Many composite structures were thus made and evaluated, and it was observed that a composite structure based on alternating layers of a ferroelectric and a phosphor yielded electroluminescence. An enabling step that was not initially proposed but was conceived during the cooperative effort was found to be crucial to the success of the composite structure. The CRADA period expired before we were able to make quantitative measurements of the luminance and efficiency of the composite EL material. Future cooperative work, outside the scope of the CRADA, will focus on making these measurements and will result in the production of a prototype composite EL device.

  1. Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films

    SciTech Connect

    Zhu, Chen; Gao, Zhifei; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang Yang, Deren; Lv, Chunyan

    2015-09-28

    We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gaining the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.

  2. Metal complex polymers for electroluminescent applications

    SciTech Connect

    Tao, X.T.; Suzuki, H.; Zhang, Y.D.; Watanabe, T.; Miyata, S.; Wada, T.; Sasabe, H.

    1998-07-01

    The authors report the synthesis and characterization of a soluble metal complex polymer for electroluminescent (EL) applications. The polymer was prepared by the reaction of a zinc Schiff base with 4,4{prime}-diphenylmethane-diisocyanate. The polymer is amorphous and with glass transition temperature of 156 C and is soluble in common organic solvents such as chloroform, tetrahydrofuran (THF), and N-methylpyrrolidinone (NMP). The zinc Schiff base, and the polyurethane (PU) shows strong photoluminescence under a UV-lamp illumination. Single and double layer EL devices consisting ITO/hole transfer layer (HTL)/PU/AL have been fabricated and characterized. The results indicated that the complex polymer could act as both electron transport and emissive layers for EL devices.

  3. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  4. Circularly Polarized Phosphorescent Electroluminescence with a High Dissymmetry Factor from PHOLEDs Based on a Platinahelicene.

    PubMed

    Brandt, Jochen R; Wang, Xuhua; Yang, Ying; Campbell, Alasdair J; Fuchter, Matthew J

    2016-08-10

    Circularly polarized (CP) light is of interest in areas such as quantum optical computing, optical spintronics, biomedicine, and high efficiency displays. Direct emission of CP light from organic light-emitting diodes (OLEDs) has been a focus of research as it has the immediate application of increasing efficiency and simplifying device architecture in OLED based displays. High dissymmetry (gEL) factor values have been reported for devices employing fluorescent polymers, but these CP-OLEDs are limited in their ultimate efficiencies by the type of emissive electronic transitions involved. In contrast, phosphorescent OLEDs (PHOLEDs) can emit light from triplet excited states and can therefore achieve very high efficiencies. However, CP-PHOLEDs are significantly understudied, and the two previous reports suffered from very low brightness or gEL values. Here, we use a platinahelicene complex to construct a CP-PHOLED that achieves both a display level brightness and a high gEL factor. The dissymmetry of CP emission reached with this proof-of-concept single-layer helicene-based device is sufficient to provide real-world benefits over nonpolarized emission and paves the way toward chiral metal complex-based CP-PHOLED displays. PMID:27434383

  5. Synthesis of TPD-containing polymers for use as light-emitting materials in electroluminescent and laser devices

    NASA Astrophysics Data System (ADS)

    Hoerhold, Hans-Heinrich; Tillmann, Hartwig; Raabe, Dietrich; Helbig, Manfred; Elflein, Wilhelm; Braeuer, Andreas H.; Holzer, Wolfgang; Penzkofer, Alfons

    2001-02-01

    The synthesis of two families of electrically active and highly luminescent TPD-based copolymers is reported. (1) The Horner-olefination between TPD-dialdehydes and xylylene bisphosphonates has been used to prepare red and green emitting conjugated TPD-PPV copolymers 1 - 4. Here the TPD (triphenylamine dimer) moieties are brigded through alkoxy- substituted p-phenylene vinylene segments. (2) Blue emitting, nonconjugated TPD-xylylene copolymers (Poly-TPD- DPX 5, (6) have been synthesized by an electrophilic aralkylation using diphenylxylylene diol and TPD as the monomers. All these TPD-copolymers constitute amorphous electro-optical materials possessing remarkably high glass transition temperatures (Tg 110 - 240 degrees Celsius). Here we demonstrate strong lasing in the red, green and blue spectral region employing thin layers (approximately 100 nm) of these solution processable polymeric materials. In waveguiding neat films traveling-wave lasing (amplified spontaneous emission -- ASE) is achieved upon picosecond pulse excitation at 347 nm. Pump energy density thresholds as low as 3 (mu) J/cm2 and ASE-line halfwidths approximately 10 nm have been observed. Comparable to the typical redox behavior of free TPD molecule the novel TPD- based polymers exhibit fully reversible electron transfer at low potential (EOx approximately 0.65 V), which is favorable for hole injection and stable charge transport in the semiconducting organic materials. In addition, these high-Tg polymers can act as the electro-active materials in LEDs, photovoltaic cells and photorefractive devices. The waveguiding properties of Poly-TPD-DPX were determined in planar and strip waveguides to be 12 dB/cm at 640 nm, and 2 dB/cm at 1550 nm.

  6. Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Bo; Li, Yong; Yan, Ling-Ling; Li, Xin-Jian

    2015-10-01

    A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ˜10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage. Project supported by the National Natural Science Foundation of China (Grant No. 61176044).

  7. Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide

    PubMed Central

    Li, Dehui; Cheng, Rui; Zhou, Hailong; Wang, Chen; Yin, Anxiang; Chen, Yu; Weiss, Nathan O.; Huang, Yu; Duan, Xiangfeng

    2015-01-01

    The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN–Al2O3–MoS2 and GaN–Al2O3–MoS2–Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multilayer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multilayer MoS2 is comparable to or higher than that in monolayers. This strong electroluminescence can be attributed to electric-field-induced carrier redistribution from the lowest energy points (indirect bandgap) to higher energy points (direct bandgap) in k-space. The electric-field-induced electroluminescence is general for other layered materials including WSe2 and can open up a new pathway towards transition metal dichalcogenide-based optoelectronic devices. PMID:26130491

  8. Light-Emitting Devices Based on New Phenanthroline Derivates

    NASA Astrophysics Data System (ADS)

    Prelipceanu, Marius; Graur, Adrian

    2014-11-01

    An investigation of film forming properties, electrical characteristics, optical and electroluminescence properties of a recently synthesized pyrrolo[1,2-a][1,10]phenanthroline derivatives (RA) has been reported. The results indicate that these new materials can be used for manufacturing organic devices as lightemitting diodes. Various device structure and thickness have been considered in experiments. The poly(pphenylenevinylene)- PPV has been used as transporting layer while the RA as emitting layer. Good rectification behaviour with a switch-on voltage in range of 3 V and 7 V has been exhibited by these devices. Yellow-green light with of 96 cdṡm-2 luminance has been found for the OLED based on the double layer structure 100 nm Indium Tin Oxide(ITO)/50 nm PPV/60 nm RA/100 nm Al

  9. Electroluminescent Displays Made With Alternative Dopants

    NASA Technical Reports Server (NTRS)

    Robertson, James B.

    1993-01-01

    Metals and metal fluorides deposited in ZnS to form color phosphors. Single-layer, thin-film electroluminescent display device contains ZnS host layer doped to form green, red, and blue phosphors. Luminescence in chosen colors at chosen intersections between rows and columns produced by application of voltages to appropriate row-and-column pairs of conductors.

  10. Lifetime Characterization of Electro-Luminescence Based Pressure-Sensitive Paint System for Unsteady Flow Field Measurements

    NASA Astrophysics Data System (ADS)

    Iijima, Yoshimi; Sakaue, Hirotaka

    2012-11-01

    Electro-luminescence based pressure-sensitive paint (EL-PSP) system uses an EL as an illumination source for a PSP measurement. EL can be directly applied onto a PSP model to eliminate a remote illumination. This gives a uniform illumination on a PSP model without moving/re-directing the illumination. The temperature dependency can be reduced by the opposite temperature dependency of the EL and PSP. At present, the system is demonstrated in a steady flow field. To extend the system for capturing an unsteady flow field, a fast responding PSP and the lifetime characterization of the system are required. The former can be achieved by using a porous PSP. The latter is discussed in the present presentation. The EL-PSP system needs an AC input to illuminate the EL, which gives a pulsed/periodic excitation to a PSP. This limits the acquisition timing of the flow field; a frequent timing can resolve a fast unsteady flow field. The lifetime of the PSP emission can be related to the pressure. The lifetime decays of the EL and PSP are measured to discuss the lifetime characterization of the system.

  11. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (<100 meV), and thus allows RISC at ambient temperature. We found that the EL emission in OLED based on the exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  12. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

  13. Electrodeposited, Transverse Nanowire Electroluminescent Junctions.

    PubMed

    Qiao, Shaopeng; Xu, Qiang; Dutta, Rajen K; Le Thai, Mya; Li, Xiaowei; Penner, Reginald M

    2016-09-27

    The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) is described, and the electroluminescence (EL) properties of these devices are characterized. The lithographically patterned nanowire electrodeposition process is first used to prepare long (millimeters), linear, nanocrystalline CdSe nanowires on glass. The thickness of these nanowires along the emission axis is 60 nm, and the width, wCdSe, along the electrical axis is adjustable from 100 to 450 nm. Ten pairs of nickel-gold electrical contacts are then positioned along the axis of this nanowire using lithographically directed electrodeposition. The resulting linear array of nickel-CdSe-gold junctions produces EL with an external quantum efficiency, EQE, and threshold voltage, Vth, that depend sensitively on wCdSe. EQE increases with increasing electric field and also with increasing wCdSe, and Vth also increases with wCdSe and, therefore, the electrical resistance of the tn-ELJs. Vth down to 1.8(±0.2) V (for wCdSe ≈ 100 nm) and EQE of 5.5(±0.5) × 10(-5) (for wCdSe ≈ 450 nm) are obtained. tn-ELJs produce a broad EL emission envelope, spanning the wavelength range from 600 to 960 nm.

  14. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

    NASA Astrophysics Data System (ADS)

    David, Aurelien; Hurni, Christophe A.; Young, Nathan G.; Craven, Michael D.

    2016-08-01

    The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

  15. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  16. White-blue electroluminescence from a Si quantum dot hybrid light-emitting diode

    SciTech Connect

    Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi

    2015-05-18

    A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6 V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

  17. Asphaltene based photovoltaic devices

    DOEpatents

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  18. Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities

    NASA Astrophysics Data System (ADS)

    Montes Bajo, M.; Dunn, G.; Stephen, A.; Khalid, Ata; Cumming, D. R. S.; Oxley, C. H.; Glover, J.; Kuball, M.

    2013-03-01

    When biased in the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes. This EL is due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. The EL forms non-uniform patterns whose intensity shows short-range intensity variations in the direction parallel to the contacts and decreases along the device channel towards the cathode. This paper employs Monte Carlo models, in conjunction with the experimental data, to analyse these non-uniform EL patterns and to study the carrier dynamics responsible for them. It is found that the short-range lateral (i.e., parallel to the device contacts) EL patterns are probably due to non-uniformities in the doping of the anode contact, illustrating the usefulness of EL analysis on the detection of such inhomogeneities. The overall decreasing EL intensity towards the anode is also discussed in terms of the interaction of holes with the time-dependent electric field due to the transit of the Gunn domains. Due to their lower relative mobility and the low electric field outside of the Gunn domain, freshly generated holes remain close to the anode until the arrival of a new domain accelerates them towards the cathode. When the average over the transit of several Gunn domains is considered, this results in a higher hole density, and hence a higher EL intensity, next to the anode.

  19. Electroluminescence of double-doped diamond thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Shi; Wang, Xiao-Ping; Wang, Li-Jun; Zhu, Yu-Zhuan; Mei, Cui-Yu; Liu, Xin-Xin; Li, Huai-Hui; Gu, Ying-Zhan

    2010-09-01

    A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd-m-2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.

  20. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    NASA Astrophysics Data System (ADS)

    Hofstetter, Daniel; Bour, David P.; Kirste, Lutz

    2014-06-01

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm-1 (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  1. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    SciTech Connect

    Hofstetter, Daniel; Bour, David P.; Kirste, Lutz

    2014-06-16

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm{sup −1} (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  2. Carbon based prosthetic devices

    SciTech Connect

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T.; Klawitter, J.J.; Ogilvie, W.; Strzepa, P.; Cook, S.D.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  3. Organic electroluminescent structures for new generation of display systems

    NASA Astrophysics Data System (ADS)

    Ermakov, Oleg N.; Kaplunov, Michail G.; Efimov, Oleg N.; Stakharny, Sergey A.

    2007-05-01

    Brief history, modern state and development trends of organic electroluminescent structures technology (so-called OLED technology) are reviewed including research activities in this field in Russia. It's noted that OLED technology is one of the most promising newly emerging display technologies. Due to advantages of these devices (low power consumption, potential flexibility, wide color range) it is particularly well suited for small area display applications (micro displays) such as cell phones, virtual imaging systems, portable electronics. Experimental results for homemade blue light emitting OLED structures and hermetically sealed numeric displays are presented including photoluminescence (PL) and electroluminescence (EL ) current-voltage and brightness characteristics. It is noted that visible electroluminescence is observed at ultra low current level of nearly 1 μA, luminous efficiency exceeding 1 lm/W thus being nearly the same as for super bright inorganic inGaN/IGaN LEDs. Special attention is paid for destabilizing factors (temperature and degradation phenomena) influence on device characteristics.

  4. 2-(2-Hydroxyphenyl)benzimidazole-based four-coordinate boron-containing materials with highly efficient deep-blue photoluminescence and electroluminescence.

    PubMed

    Zhang, Zhenyu; Zhang, Houyu; Jiao, Chuanjun; Ye, Kaiqi; Zhang, Hongyu; Zhang, Jingying; Wang, Yue

    2015-03-16

    Two novel four-coordinate boron-containing emitters 1 and 2 with deep-blue emissions were synthesized by refluxing a 2-(2-hydroxyphenyl)benzimidazole ligand with triphenylborane or bromodibenzoborole. The boron chelation produced a new π-conjugated skeleton, which rendered the synthesized boron materials with intense fluorescence, good thermal stability, and high carrier mobility. Both compounds displayed deep-blue emissions in solutions with very high fluorescence quantum yields (over 0.70). More importantly, the samples showed identical fluorescence in the solution and solid states, and the efficiency was maintained at a high level (approximately 0.50) because of the bulky substituents between the boron atom and the benzimidazole unit, which can effectively separate the flat luminescent units. In addition, neat thin films composed of 1 or 2 exhibited high electron and hole mobility in the same order of magnitude 10(-4), as determined by time-of-flight. The fabricated electroluminescent devices that employed 1 or 2 as emitting materials showed high-performance deep-blue emissions with Commission Internationale de L'Eclairage (CIE) coordinates of (X = 0.15, Y = 0.09) and (X = 0.16, Y = 0.08), respectively. Thus, the synthesized boron-containing materials are ideal candidates for fabricating high-performance deep-blue organic light-emitting diodes.

  5. Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    NASA Astrophysics Data System (ADS)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal–oxide–semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)–Si–O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler–Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  6. Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    NASA Astrophysics Data System (ADS)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  7. Streamline-based microfluidic device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  8. Nanocrystal-based Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth; Herzog, Joseph; Ward, Daniel; Natelson, Douglas

    2012-02-01

    Optoelectronic devices capable of detecting and emitting light on a scale well below its wavelength could have a profound impact on basic and applied experimental research in light-based electronics, on-demand photon generation, and for studying poorly understood quantum phenomena such as blinking and spectral wandering. We present a fabrication procedure for ultrasmall, nanocrystal optoelectronic devices based on self-assembled layers of quantum dots in plasmonically-active gold nanogaps. We provide preliminary experimental results which examine the possibility for surfaced-enhanced fluorescence, subwavelength detection and emission of light as well as plasmon-based optical trapping in these systems.

  9. [Electroluminescence character of novel unsymmetry substituted phthalocyanines].

    PubMed

    Xia, Dao-cheng; Li, Wan-cheng; Han, Shuang; Cheng, Chuan-hui; Li, Quan-quan; Wang, Jin; Zhang, Wei; Li, Zhu

    2010-09-01

    The authors for the first time fabricated OLEDs employing novel phthalocynines: 2(3)-(p-tert-butylphenoxy) copper phthalocyanine(1), 2(3),16(17)-di(p-tert-butyl-phenoxy) copper phthalocyanine(2) and 2(3), 9(10), 16(17)-tri (p-tert-butylphenoxy) copper phthalocyanine(3) as light emitting layer, and their electroluminescence character was studied. The final structures of three-layer OLEDs based on copper 2(3)-(p-tert-butylphenoxy) copper phthalocyanine (1) and 2(3), 9(10), 16(17)-tri (p-tert-butylphenoxy) copper phthalocyanine(3) were ITO/NPB(40 nm)/Pc(30 nm)/AlQ(43.5 nm)/LiF (0.5 nm)/Al(120 nm). The structure of three-layer OLED based on 2(3), 9(10), 16(17)-tri (p-tert-butylphenoxy) copper phthalocyanine (3) was ITO/NPB(30 nm)/Pc(30 nm) /BCP(20 nm)/A1Q(30 nm)/LiF (0. 5 nm)/Al(120 nm). Room-temperature electroluminescence was observed at about 869 nmand 1 062 nm for 2(3)-(p-tert-butylphenoxy) copper phthalocyanine(1); room-temperature electroluminescence of 2(3),16(17) -di(p-tert-butyl-phenoxy) copper phthalocyanine(2) was found at about 1050 nm and 1110 nm; and room-temperature electroluminescence of 2(3), 9(10), 16( 17)-tri (p-tert-butylphenoxy) copper phthalocyanine(3) was studied at about 1095 and 1204 nm. The emission wavelengths and the half bandwidths were quite different for the phthalocyanine, which may be due to the differences in the number of substituted and the molecular aggregations in vacuum sublimed films. The difference in Stokes shift relaxation was also induced by the molecular aggregations.

  10. Nanosecond transient electroluminescence from polymer light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Braun, D.; Moses, D.; Zhang, C.; Heeger, A. J.

    1992-12-01

    The transient electroluminescence from polymer light-emitting diodes is reported. When the devices are mounted on a microstrip transmission line, the temporal response is limited by the electrode geometry, with rise and fall times below 50 ns. With low duty-cycle pulses (0.5%) the electroluminescence intensity remains proportional to the current at values up to 10 A/cm2, two orders of magnitude greater than possible under direct current operation. Since the spectral blue-shift observed at high current levels (with power dissipation above 1 W/cm2) indicates significant sample heating, still higher levels should be possible with proper thermal management.

  11. GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters.

    PubMed

    Rossella, Francesco; Piazza, Vincenzo; Rocci, Mirko; Ercolani, Daniele; Sorba, Lucia; Beltram, Fabio; Roddaro, Stefano

    2016-09-14

    We investigate light emission from nanoscale point-sources obtained in hybrid metal-GaAs nanowires embedding two sharp axial Schottky barriers. Devices are obtained via the formation of Ni-rich metallic alloy regions in the nanostructure body thanks to a technique of controlled thermal annealing of Ni/Au electrodes. In agreement with recent findings, visible-light electroluminescence can be observed upon suitable voltage biasing of the junctions. We investigate the time-resolved emission properties of our devices and demonstrate an electrical modulation of light generation up to 1 GHz. We explore different drive configurations and discuss the intrinsic bottlenecks of the present device architecture. Our results demonstrate a novel technique for the realization of fast subwavelength light sources with possible applications in sensing and microscopy beyond the diffraction limit. PMID:27532324

  12. Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence

    NASA Astrophysics Data System (ADS)

    Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

    2016-03-01

    We developed a direct experimental approach for investigating the correlation between efficiency droop and recombination rate variation under current injection conditions by using time-resolved electroluminescence (EL) technique. We applied this approach to understand the droop phenomenon of GaN-based light-emitting diodes grown on patterned sapphire substrates (LED-on-PAT) and planar sapphire substrates (LED-on-PLA). Because of lower dislocation density and current leakage in LED-on-PAT compared to LED-on-PLA, it was found that the effective carrier density injected into quantum wells (QWs) in LED-on-PAT was higher than that of the LED-on-PLA under the same current injection conditions, based on the analysis of spectral broadening of EL spectra with varying current injection and photoluminescence experiments under resonant and non-resonant excitation conditions. The efficiency droop in LED-on-PAT was found to be much more severe than that of LED-on-PLA, despite the higher overall quantum efficiency of LED-on-PAT. From the time-resolved EL analysis, we could separate radiative and non-radiative recombination contributions and directly observe (i) the decrease and saturation of radiative recombination time and (ii) the increase and following decrease in behavior of non-radiative recombination time with increasing current injection level, showing a strong correlation between efficiency droop and recombination rate variation.

  13. Graphene based flexible electrochromic devices

    NASA Astrophysics Data System (ADS)

    Polat, Emre O.; Balcı, Osman; Kocabas, Coskun

    2014-10-01

    Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics.

  14. Graphene based flexible electrochromic devices.

    PubMed

    Polat, Emre O; Balcı, Osman; Kocabas, Coskun

    2014-01-01

    Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics. PMID:25270391

  15. Electroluminescence of Carbon-Implanted Silicon

    NASA Astrophysics Data System (ADS)

    Risch, Marcel; Bradley, Michael

    2007-11-01

    Silicon, being the staple semiconductor of integrated circuits and microchips, features an indirect band gap which limits its application in photonic devices. However, there is a large demand for an interface between electric circuits and optical circuits and therefore light-emitting silicon-compatible devices. A possible approach to enhance the room-temperature light properties of silicon is carbon ion implantation. We compute the absolute number of implanted ions using the Lieberman model for the ion current. Subsequently, SRIM calculations yield the concentration distribution, which has great influence on the emission spectrum. We produced Schottky diodes from the processed samples and found the most stable and efficient operation at a current density of about 2.5 A/cm^2. The observed electroluminescence, caused by compositional and structural disorder, appears orange-white to the eye. The discussed method has limitations for the quantum efficiency but shows some potential for cost-effective on-chip light emitting diodes (LED).

  16. FIrpic: archetypal blue phosphorescent emitter for electroluminescence.

    PubMed

    Baranoff, Etienne; Curchod, Basile F E

    2015-05-14

    FIrpic is the most investigated bis-cyclometallated iridium complex in particular in the context of organic light emitting diodes (OLEDs) because of its attractive sky-blue emission, high emission efficiency, and suitable energy levels. In this Perspective we review the synthesis, structural characterisations, and key properties of this emitter. We also survey the theoretical studies and summarise a series of selected monochromatic electroluminescent devices using FIrpic as the emitting dopant. Finally we highlight important shortcomings of FIrpic as an emitter for OLEDs. Despite the large body of work dedicated to this material, it is manifest that the understanding of photophysical and electrochemical processes are only broadly understood mainly because of the different environment in which these properties are measured, i.e., isolated molecules in solvent vs. device. PMID:25388935

  17. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    layers sandwiched between monolayers of oxygen. The key for its fabrication is that epitaxial growth of silicon may be continued beyond the interruption with exposure to oxygen. Prepared by an Ultra High Vacuum (UHV), Molecular Beam Epitaxial (MBE) technique, the multilayer device is extremely stable and robust, and can be readily integrated with conventional silicon VLSI processing. In addition, it exhibits bright, room temperature, visible photoluminescent and electroluminescent emission, at least as strong as that of porous silicon. With its efficient light emission, robustness and stability, the c-Si/O superlattice may hold the promise of a truly integrated silicon-based optoelectronic device.

  18. Bolometric Device Based on Fluxoid Quantization

    NASA Technical Reports Server (NTRS)

    Bonetti, Joseph A.; Kenyon, Matthew E.; Leduc, Henry G.; Day, Peter K.

    2010-01-01

    The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

  19. Photoelectric characteristics of organic light-emitting device based on a small molecular fluorene derivative

    NASA Astrophysics Data System (ADS)

    Qian, Jincheng; Yu, Junsheng; Jiang, Yadong; Lou, Shuangling; Zhang, Qing

    2009-11-01

    The performance of organic light-emitting devices (OLEDs) based on a small molecular fluorene material, 6,6'-(9H-fluoren-9,9-diyl)bis(2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ), was investigated. Double-layer devices with a structure of indium tin oxide (ITO)/BFLBBFLYQ/2,9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP)/Mg:Ag were fabricated. To improve the performance of the OLEDs, N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1, 1'-biphenyl-4,4'-diamine (TPD) was introduced, and triple-layer OLEDs with a configuration of ITO/TPD/BFLBBFLYQ/BCP/Mg:Ag were fabricated. By analyzing the electric and luminescent properties of the devices with two different structures, it was found that the performance of triple-layer devices was higher than that of double-layer device. The electroluminescent (EL) spectra of the devices were also studied, which showed that the EL spectra red-shifted as the vacuum deposition temperature increased.

  20. Blue-green emitting cationic iridium complexes with 1,3,4-oxadiazole cyclometallating ligands: synthesis, photophysical and electrochemical properties, theoretical investigation and electroluminescent devices.

    PubMed

    Wang, Zhen; He, Lei; Duan, Lian; Yan, Jun; Tang, Ruiren; Pan, Chunyue; Song, Xiangzhi

    2015-09-28

    Two cationic iridium complexes, namely [Ir(dph-oxd)2(bpy)]PF6 (1) and [Ir(dph-oxd)2(pzpy)]PF6 (2), using 2,5-diphenyl-1,3,4-oxadiazole (dph-oxd) as the cyclometallating ligand and 2,2'-bipyridine (bpy) or 2-(1H-pyrazol-1-yl)pyridine (pzpy) as the ancillary ligands, have been synthesized, and their photophysical and electrochemical properties have been comprehensively investigated. In solution, both complexes emit efficient blue-green light. For complex 1, the light emission in a neat film is remarkably red-shifted; in solid state, it gives an intriguing piezochromic phenomenon. Compared with archetype [Ir(ppy)2(bpy)]PF6 (ppy is 2-phenylpyridine), complex 1 shows a largely stabilized HOMO (highest occupied molecular orbital) level, induced by the electron-deficient 1,3,4-oxadiazole (oxd) heterocycle of dph-oxd, which results in an enlarged energy gap and blue-shifted emission. Compared with complex 1, complex 2 shows an enhanced LUMO (lowest unoccupied molecular orbital) level, caused by the electron-rich pzpy ancillary ligand, but they exhibit similar emission energy in solution. For both complexes, theoretical calculations reveal that their blue-green emission in solution arises primarily from the (3)π-π* states centered on dph-oxd; moreover, complex 1 bears close-lying (3)π-π* and (3)CT (charge-transfer) states, underlying its remarkably red-shifted emission in the neat film and unique piezochromic behavior in the solid state. Solid state light emitting electrochemical cells (LECs) based on complexes 1 and 2 give efficient yellow and green-blue light, with peak current efficiencies of 18.3 and 5.2 cd A(-1), respectively. It is demonstrated that oxd-type cyclometallating ligands are promising as an avenue to stabilize the HOMOs and tune emission properties of cationic iridium complexes to a large extent. PMID:26279263

  1. Interband cascade light emitting devices based on type-II quantum wells

    SciTech Connect

    Yang, Rui Q.; Lin, C.H.; Murry, S.J.

    1997-06-01

    The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 {mu}m).

  2. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. Polymer and small molecule based hybrid light source

    DOEpatents

    Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

    2010-03-16

    An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

  4. Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.

  5. Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

    NASA Astrophysics Data System (ADS)

    Wang, Qin; Savage, Susan; Persson, Sirpa; Noharet, Bertrand; Junique, Stéphane; Andersson, Jan Y.; Liuolia, Vytautas; Marcinkevicius, Saulius

    2009-02-01

    We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structures with operation wavelengths ranging from 270 nm to 450 nm. Utilizing MQW structure as device active layer offers a flexibility to tune its long cut-off wavelength in a wide UV range from solar-blind to visible by adjusting the well width, well composition and barrier height. Similarly, its short cut-off wavelength can be adjusted by using a GaN or AlGaN block layer on a sapphire substrate when the device is illuminated from its backside, which further provides an optical filtering effect. When a current injects into the device under forward bias the device acts as an UV light emitter, whereas the device performs as a typical photodetector under reverse biases. With applying an alternating external bias the device might be used as electroabsorption modulator due to quantum confined Stark effect. In present work fabricated devices have been characterized by transmission/absorption spectra, photoresponsivity, electroluminescence, and photoluminescence measurements under various forward and reverse biases. The piezoelectric effect, alloy broadening and Stokes shift between the emission and absorption spectra in different InGaN- and AlGaN-based QW structures have been investigated and compared. Possibilities of monolithic or hybrid integration using such multiple functional devices for biological warfare agents sensing application have also be discussed.

  6. Bistable electroluminescence in p-i-n light-emitting tunnel-diodes enhanced by aperiodic-superlattice injectors

    NASA Astrophysics Data System (ADS)

    Cao, S. M.; Willander, M.; Toropov, A. A.; Shubina, T. V.; Mel'tser, B. Ya.; Kop'ev, P. S.; Lundström, T.; Holtz, P. O.; Bergman, J. P.; Monemar, B.

    1998-01-01

    A p-i-n resonant tunnel diode is designed and investigated using photoluminescence (PL) spectroscopy. The device is based on an Al0.4Ga0.6As/GaAs graded-index waveguide heterostructure enhanced by aperiodic-superlattice injectors for simultaneous resonant injection of electrons and heavy holes. The bias-dependent study of photocurrent, electroluminescence (EL) and PL show strong resonance behavior in the optical intensity confirming the field-dependent resonant injection of the excited states in the emission layers. Pronounced voltage-current bistability due to injection efficiency leads to multiple-wavelength EL and lasing action.

  7. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    SciTech Connect

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang Zhang, Zhenru; Zeng, Cen; Xu, Shengang; Cao, Shaokui

    2015-10-15

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGs are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.

  8. Electroluminescence en avalanche des jonctions p-n a base de silicium et d'arseniure de gallium, et effet d'irradiation

    NASA Astrophysics Data System (ADS)

    Aboujja, Sidi

    2000-10-01

    Dans ce travail de these nous etudions l'electroluminescence (EL) des jonctions a base de silicium (Si) et d'arseniures de gallium (GaAs), polarisees en avalanche. Dans le cas des jonctions p-n a base de Si (semi-conducteur a gap indirect), la polarisation en direct est accompagnee d'une emission de lumiere dans l'infrarouge. Cette emission est due a la recombinaison des electrons-trous a travers le gap indirect appelee recombinaison interbande. La polarisation en avalanche est accompagnee d'une emission de lumiere dans le visible. Cette emission fait l'objet de controverses depuis sa decouverte en 1955. Il n'y a pas encore un accord definitif sur son origine. Une des causes du desaccord est la forme spectrale du signal qui apparaIt non reproductible. Souvent les spectres sont presentes sans correction par la reponse du systeme de detection. La plupart des modeles proposes pour expliquer cette emission en avalanche se basent sur les transitions entre la bande de conduction et la bande de valence appeles modeles interbandes. Pour verifier sa validite, nous avons expose les jonctions aux irradiations dans le but d'introduire des defauts dans la bande interdite et nous avons fait varier la temperature afin de changer le gap et la population des porteurs. Nous avons observe que l'EL dans le mode de polarisation directe chute suite aux irradiations et a la baisse de temperature, comme prevu. Mais l'EL en avalanche est insensible a ces deux perturbations. Par consequent nous avons rejete le mecanisme de recombinaison interbande. Pour expliquer l'emission en avalanche nous proposons des transitions entre d'autres niveaux excites appeles sous-bandes de conduction. La mesure de duree de vie qui s'est revelee courte suggere des transitions directes entre sous-bandes de conduction. La confrontation de la structure de bandes d'energie et l'experience nous a permis d'attribuer cette emission en avalanche a des transitions entre les sous-bandes de conduction Gamma1 et Gamma '1

  9. Tentative anatomy of ZnS-type electroluminescence

    NASA Astrophysics Data System (ADS)

    Bringuier, E.

    1994-05-01

    The paper reviews the electrical and optical mechanisms at work in sulfide-based thin-film electroluminescence display devices within the framework of general semiconductor physics. The electrical problem is twofold: (i) charge carriers are sourced at high electric field in a nominally insulating material, the carrier density increasing by almost eight orders of magnitude; (ii) the carriers are transported at high field, with an average energy largely exceeding the thermal one. (i) Carrier sourcing is best understood from direct-current-driven ZnS films, and is ascribed to partly filled deep donors transferring electrons to the conduction band by Fowler-Nordheim tunneling. The deep donors also act as carrier sinkers, and evidence for space charge is afforded by small-signal impedance analysis disclosing a markedly inductive behavior. The conduction picture obtained from dc-driven films is then used to clarify the operation of alternating-current electroluminescence structures where the sulfide is sandwiched between two blocking oxide layers. The electrostatics of the ac structure is investigated in detail including space charge and field nonuniformity, and external observables are related to internal quantities. The simple model of interfacial carrier sourcing and sinking is examined. (ii) High-field electronic transport is controlled by the electron-phonon interaction, and the modeling resorts to numerical simulations or the lucky-drift concept. At low electron energies the interaction with phonons is predominantly polar, while at optical energies it proceeds via deformation potential scattering. In spite of the uncertainties in transport models in that range, it is likely that ˜50% of the electrons overtake 2 eV at the usual operating fields in ZnS. Light emission is associated with impurity luminescence centers embedded in the sulfide host. They are excited while current is flowing, and the ensuing relaxation is partly radiative. We describe the two ways in

  10. Adaptive Device Context Based Mobile Learning Systems

    ERIC Educational Resources Information Center

    Pu, Haitao; Lin, Jinjiao; Song, Yanwei; Liu, Fasheng

    2011-01-01

    Mobile learning is e-learning delivered through mobile computing devices, which represents the next stage of computer-aided, multi-media based learning. Therefore, mobile learning is transforming the way of traditional education. However, as most current e-learning systems and their contents are not suitable for mobile devices, an approach for…

  11. Blue-red electroluminescence from hybrid Eu:phosphors/ZnO-nanowires/p-GaN LED

    NASA Astrophysics Data System (ADS)

    Viana, B.; Pauporte, T.; Lupan, O.; Devis, L.; Gacoin, T.

    2014-03-01

    Nanowire (NW) based light emitting diodes (LEDs) have drawn great research interest due to many advantages compared to thin film based devices. Marked improved performances are expected from nanostructured active layers for light emission. Semiconducting oxide nanowires can act as direct waveguides and favor emitted light extraction without use of lens and reflectors in LEDs. Moreover, the use of ZnO wires avoids the presence of grain boundaries and then the emission efficiency is boosted by the absence of non-radiative recombinations at the joint defects. In this context, europium (Eu):Chelate/ZnO:Mg-nanowires/p-GaN light-emitting-diode (LED) structures have been fabricated showing near-UV/violet electroluminescence and red emission from trivalent europium. Fabricated LED structures exhibit UV-blue light at about 380 nm coming from the n-(ZnO:Mg)/p-GaN and a sharp red emission at ˜611 nm related to the intra-4f transition of Eu ions. It is found that in the case of the ZnO:Mg, the emission wavelength is slightly shifted to smaller wavelength to be well adapted to the trivalent europium excitation band. Radiative energy transfer is achieved through strong overlap between the emission wavelength from n-(ZnO:Mg)/p- GaN heterojunction and chelate ligand intensive absorption band. Indeed the Eu:chelate/(ZnO:Mg)-nanowires/p-GaN structure appears well adapted to UV/blue and red dual emission. Our results shows that the design of LEDs based on the chelate ligands are important issue to enhance the performance of electroluminescence devices based on ZnO nanowire arrays/p-GaN heterojunction and rare-earth metal complexes.

  12. Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

    PubMed

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-03-18

    Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. PMID:26878415

  13. Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaO x -p-GaN heterojunction

    NASA Astrophysics Data System (ADS)

    Zhao, J. L.; Teo, K. L.; Zheng, K.; Sun, X. W.

    2016-03-01

    Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO x is employed as the intermediate layer and an n-ZnO-TaO x -p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

  14. Polymer-based electrocaloric cooling devices

    DOEpatents

    Zhang, Qiming; Lu, Sheng-Guo; Li, Xinyu; Gorny, Lee; Cheng, Jiping; Neese, Bret P; Chu, Baojin

    2014-10-28

    Cooling devices (i.e., refrigerators or heat pumps) based on polymers which exhibit a temperature change upon application or removal of an electrical field or voltage, (e.g., fluoropolymers or crosslinked fluoropolymers that exhibit electrocaloric effect).

  15. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    SciTech Connect

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso; Glick, Stephen; Kerekes, Tamas; Teodorescu, Remus

    2015-06-14

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module's electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation. Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.

  16. Efficient near-infrared organic light-emitting devices based on low-gap fluorescent oligomers

    NASA Astrophysics Data System (ADS)

    Yang, Yixing; Farley, Richard T.; Steckler, Timothy T.; Eom, Sang-Hyun; Reynolds, John R.; Schanze, Kirk S.; Xue, Jiangeng

    2009-08-01

    We report efficient near-infrared (NIR) organic light-emitting devices (OLEDs) based on fluorescent donor-acceptor-donor conjugated oligomers. The energies of the highest occupied and lowest unoccupied molecular orbitals of these oligomers are controlled by the donor and acceptor components, respectively; hence the energy gap and therefore the emission wavelength can be tuned by changing the strengths of the donor and acceptor components. External quantum efficiencies (EQEs) up to 1.6% and power efficiencies up to 7.0 mW/W are achieved in NIR OLEDs based on 4,9-bis(2,3-dihydrothieno[3,4-b][1,4]dioxin-5-yl)-6,7-dimethyl-[1,2,5]thiadiazolo[3,4-g]-quinoxaline (BEDOT-TQMe2), in which the electroluminescence peaks at a wavelength of 692 nm but extends to well above 800 nm. With a stronger acceptor in the oligomer, 4,8-bis(2,3-dihydrothieno-[3,4-b][1,4]dioxin-5-yl)benzo[1,2-c;4,5-c']bis [1,2,5]thiadiazole (BEDOT-BBT) based devices show longer wavelength emission peaked at 815 nm, although the maximum EQE is reduced to 0.51% due to the lower fluorescent quantum yield of the NIR emitter. The efficiencies of these NIR OLEDs are further increased by two to three times by using the sensitized fluorescent device structure, leading to a maximum EQE of 3.1% for BEDOT-TQMe2 and 1.6% for BEDOT-BBT based devices.

  17. Devices based on surface plasmon interference filters

    NASA Technical Reports Server (NTRS)

    Wang, Yu (Inventor)

    2001-01-01

    Devices based on surface plasmon filters having at least one metal-dielectric interface to support surface plasmon waves. A multi-layer-coupled surface plasmon notch filter is provided to have more than two symmetric metal-dielectric interfaces coupled with one another to produce a transmission spectral window with desired spectral profile and bandwidth. Such notch filters can form various color filtering devices for color flat panel displays.

  18. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  19. Green-Yellow Electroluminescence from a host-dopant blended system as the active layer in a bilayer polymer light emitting diode: Poly(n-vinyl carbazole) as the host and a new soluble thiophene based copolymer [poly(2,2‧-BT)-co-(3-DDT)] as the dopant

    NASA Astrophysics Data System (ADS)

    Shahalizad, Afshin; Ahmadi-Kandjani, Sohrab; Movla, Hossein; Omidi, Hafez; Massoumi, Bakhshali; Zakerhamidi, Mohammad Sadegh; Entezami, Ali Akbar

    2014-11-01

    A new type of bilayer Polymer Light Emitting Diode (PLED) which emits green-yellow light is reported. In this PLED, a novel thiophene-based copolymer [poly(2,2‧-BT)-co-(3-DDT)] with an excellent electron transporting property has been doped in hole transporting and electron blocking poly(n-vinylcarbazole) (PVK). Formation of type-II heterojunctions among nm-size features in PVK:poly(2,2‧-BT)-co-(3-DDT) blended system makes exciplex and electroplex emissions would be dominant in the Electroluminescence (EL) spectrum of the device. These cross recombinations between electrons in the LUMO of poly(2,2‧-BT)-co-(3-DDT) and holes in the HOMO of PVK is a reason for the low driving voltage of the PLED because there is no need for the charge carriers to hop or tunnel to the adjacent polymer. Morphological investigations demonstrate that the mixing degree between the components is high, favoring formation of exciplexes and electroplexes at the interface of the components.

  20. Device-based Therapy for Hypertension.

    PubMed

    Ng, Fu L; Saxena, Manish; Mahfoud, Felix; Pathak, Atul; Lobo, Melvin D

    2016-08-01

    Hypertension continues to be a major contributor to global morbidity and mortality, fuelled by an abundance of patients with uncontrolled blood pressure despite the multitude of pharmacological options available. This may occur as a consequence of true resistant hypertension, through an inability to tolerate current pharmacological therapies, or non-adherence to antihypertensive medication. In recent years, there has been a rapid expansion of device-based therapies proposed as novel non-pharmacological approaches to treating resistant hypertension. In this review, we discuss seven novel devices-renal nerve denervation, baroreflex activation therapy, carotid body ablation, central iliac arteriovenous anastomosis, deep brain stimulation, median nerve stimulation, and vagal nerve stimulation. We highlight how the devices differ, the varying degrees of evidence available to date and upcoming trials. This review also considers the possible factors that may enable appropriate device selection for different hypertension phenotypes. PMID:27370788

  1. Epitaxial growth of III-V compounds for electroluminescent light sources

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Smeltzer, R. K.

    1973-01-01

    The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

  2. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  3. Cellphone-based devices for bioanalytical sciences.

    PubMed

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-05-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This report aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities.

  4. Cellphone-based devices for bioanalytical sciences

    PubMed Central

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-01-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  5. Phonon-assisted transient electroluminescence in Si

    SciTech Connect

    Cheng, Tzu-Huan; Chu-Su, Yu; Liu, Chien-Sheng; Lin, Chii-Wann

    2014-06-30

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO + TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (∼1.2 μm) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  6. Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Sudradjat, Faisal Firmansyah

    The terahertz (THz) spectral region, commonly defined as the frequency (wavelength) range between 0.3 and 10 THz (1 mm and 30 µm) has many important applications in the industrial, biomedical, and military sectors. However, due to a lack of practical semiconductor materials with adequately small bandgap energy, the development of THz light sources and photodetectors has so far been limited. In recent years, devices based on intersubband transitions between discrete energy states in quantum heterostructures have been under intense research and development to address this issue. Of particular promise in the THz range are quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which utilize intersubband transitions in specially designed quantum well (QW) structures to emit light and generate photocurrent, respectively. This research work has focused on the development of THz light sources and photodetectors using intersubband transitions in GaN/AlGaN QWs, whose basic materials properties allow for improved spectral coverage and high-temperature operation compared to existing semiconductor devices. To design the active region of QCLs and QWIPs based on inter-conduction-subband transitions in these materials, the necessary numerical tools have first been developed. Sequential tunneling, the key electronic transport mechanism of intersubband light emitters, has then been demonstrated in GaN/AlGaN QC structures. Furthermore, we have measured promising THz electroluminescence spectra from the same devices through the use of lock-in step-scan Fourier transform infrared spectroscopy. In the area of photodetectors, we have developed a novel double-step QW design in order to overcome the material limitations presented by the intrinsic internal electric fields of GaN/AlGaN QWs. With this design approach, we have experimentally demonstrated the operation of a far infrared QWIP with a peak detection wavelength of 23 µm (13 THz frequency), which is the

  7. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

    SciTech Connect

    Mikhailova, M. P.; Ivanov, E. V.; Danilov, L. V.; Petukhov, A. A.; Kalinina, K. V.; Slobozhanyuk, S. I.; Zegrya, G. G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, A.; Pangrác, J.; Oswald, J.; Zíková, M.; Hulicius, E.

    2014-06-14

    We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electron level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.

  8. Topological insulator-based energy efficient devices

    NASA Astrophysics Data System (ADS)

    Chen, Yong P.

    2012-06-01

    Topological insulators (TI) have emerged as a new class of quantum materials with many novel and unusual properties. In this article, we will give a brief review of the key electronic properties of topological insulators, including the signatures for the unusual electronic transport properties of their characteristic topological surface states (TSS). We will then discuss how these novel properties and physics may be utilized for TI-based energy efficient devices, such as lowpower- consumption electronics and high performance thermo-electrics. Furthermore, going beyond conventional singleparticle, charge-based transport, to utilize coherent many-body coherent ground states such as excitonic condensates (EC), new and intriguing functionalities previously unexplored in electronic and energy devices may be realized with the potential to dramatically improve the energy efficiency.

  9. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  10. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    NASA Astrophysics Data System (ADS)

    Gallagher, J. D.; Senaratne, C. L.; Sims, P.; Aoki, T.; Menéndez, J.; Kouvetakis, J.

    2015-03-01

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1-ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1-ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  11. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  12. Electrorheological Fluid Based Force Feedback Device

    NASA Technical Reports Server (NTRS)

    Pfeiffer, Charles; Bar-Cohen, Yoseph; Mavroidis, Constantinos; Dolgin, Benjamin

    1999-01-01

    Parallel to the efforts to develop fully autonomous robots, it is increasingly being realized that there are applications where it is essential to have a fully controlled robot and "feel" its operating conditions, i.e. telepresence. This trend is a result of the increasing efforts to address tasks where humans can perform significantly better but, due to associated hazards, distance, physical limitations and other causes, only robots can be employed to perform these tasks. Such robots need to be assisted by a human that remotely controls the operation. To address the goal of operating robots as human surrogates, the authors launched a study of mechanisms that provide mechanical feedback. For this purpose, electrorheological fluids (ERF) are being investigated for the potential application as miniature haptic devices. This family of electroactive fluids has the property of changing the viscosity during electrical stimulation. Consequently, ERF can be used to produce force feedback haptic devices for tele-operated control of medical and space robotic systems. Forces applied at the robot end-effector due to a compliant environment are reflected to the user using an ERF device where a change in the system viscosity will occur proportionally to the transmitted force. Analytical model and control algorithms are being developed taking into account the non-linearities of these type of devices. This paper will describe the concept and the developed mechanism of ERF based force feedback. The test process and the physical properties of this device will be described and the results of preliminary tests will be presented.

  13. Gated Ion Channel-Based Biosensor Device

    NASA Astrophysics Data System (ADS)

    Separovic, Frances; Cornell, Bruce A.

    A biosensor device based on the ion channel gramicidin A (gA) incorporated into a bilayer membrane is described. This generic immunosensing device utilizes gA coupled to an antibody and assembled in a lipid membrane. The membrane is chemically tethered to a gold electrode, which reports on changes in the ionic conduction of the lipid bilayer. Binding of a target molecule in the bathing solution to the antibody causes the gramicidin channels to switch from predominantly conducting dimers to predominantly nonconducting monomers. Conventional a.c. impedance spectroscopy between the gold and a counter electrode in the bathing solution is used to measure changes in the ionic conductivity of the membrane. This approach permits the quantitative detection of a range of target species, including bacteria, proteins, toxins, DNA sequences, and drug molecules.

  14. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Wilson, Thomas S.; Hamilton, Julie K.; Benett, William J.; Tovar, Armando R.

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  15. Spatially resolved determination of the dark saturation current of silicon solar cells from electroluminescence images

    NASA Astrophysics Data System (ADS)

    Glatthaar, Markus; Giesecke, Johannes; Kasemann, Martin; Haunschild, Jonas; The, Manuel; Warta, Wilhem; Rein, Stefan

    2009-06-01

    We present a novel method to determine spatially resolved the dark saturation current of standard silicon solar cells. For this two electroluminescence images are taken at two different voltages. From these two images, first the spatial voltage distribution can be calculated. Second by applying the Laplacian to the voltage image from Ohm's law and the continuity equation, the current through the device at a certain position can be determined. Knowing the local current through the device, the local voltage, and the emitter sheet resistance allows to determine the local dark saturation current. The clue of this method is to cope with the noise by using an appropriate noise reduction algorithm. By simulating electroluminescence images with realistic noise and known dark saturation current we demonstrate the applicability of the method with our noise reduction algorithm. Experimentally we compare our method with spectral response light beam induced current on multicrystalline solar cell.

  16. Policy-Based Device and Mobility Management

    NASA Astrophysics Data System (ADS)

    Imai, Pierre; Lamparter, Bernd; Liebsch, Marco

    Each new generation of mobile terminals offers more and better functionality, e.g. terminal mobility, multi-homing or inter-device session mobility. Furthermore, the interaction with consumer devices, e.g. DLNA TV or stereo sets, is becoming more common. Every new feature, however, is likely to result in increased complexity for the end user: Most people do not know how to utilize all features of their mobile terminals, hence devices that offer only a reduced feature set are becoming more popular. Additionally, while the end user expects to be in control, the network operator might want to exert some influence over which features are available or trigger actions, e.g. handovers, based on contract, location, etc. The aim of our research is to offer high flexibility and functionality combined with ease of use. We designed a policy management framework for the mentioned session mobility functions which supports the user in the configuration of the functions and automates commonly performed actions.

  17. Improving the diversity of manufacturing electroluminescent flat panel displays

    SciTech Connect

    Moss, T.S.; Samuels, J.A.; Smith, D.C.

    1995-09-01

    Crystalline calcium thiogallate with a cerium dopant has been deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures below 600{degrees}C on a low cost glass substrate. An EL luminance of 1.05 fL was observed 40 volts above threshold at 60 Hz. This is more than an order of magnitude improvement over earlier crystalline-as-deposited thiogallate materials. These results pave the way for the use of MOCVD as a potential method for processing full color thin-film electroluminescent (TFEL) flat panel displays. The formation of the CaGa{sub 2}S{sub 4}:Ce phosphor requires precise control over a number of deposition parameters including flow rates, substrate temperature, and reactor pressure. The influence of these parameters will be discussed in terms of structure, uniformity, and TFEL device performance.

  18. Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction.

    PubMed

    Yin, Yu-Feng; Lin, Yen-Chen; Tsai, Tsung-Han; Shen, Yi-Chun; Huang, Jianjang

    2013-01-15

    In recent years, researchers have demonstrated negative refraction theoretically and experimentally by pumping optical power into photonic crystal (PhC) or waveguide structures. The concept of negative refraction can be used to create a perfect lens that focuses an object smaller than the wavelength. By inserting two-dimensional PhCs into the peripheral of a semiconductor light emitting structure, this study presents an electroluminescent device with negative refraction in the visible wavelength range. This approach produces polarization dependent collimation behavior in far-field radiation patterns. The modal dispersion of negative refraction results in strong group velocity modulation, and self-focusing and -defocusing behaviors are apparent from light extraction. This study further verifies experimental results by using theoretic calculations based on equifrequency contours. PMID:23454956

  19. Synthesis, Crystal Analyses, Physical Properties, and Electroluminescent Behavior of Unsymmetrical Heterotwistacenes.

    PubMed

    Lv, Bo; Xiao, Jinchong; Zhou, Jian; Zhang, Xi; Duan, Jingdan; Su, Wenming; Zhao, Jianwen

    2016-07-27

    Four novel unsymmetrical heteroacenes containing five-membered heterocycles (OPyN, TPyN, TPyC, TPyO) have been synthesized and characterized. The formed molecules exhibited twisted structures, determined by crystal analysis and showed blue/green fluorescence in dichloromethane and in thin film. Compounds OPyN and TPyN were selectively used as active ingredients, and the fabricated devices displayed promising electroluminescent performance. PMID:27383556

  20. Nanodot-based organic memory devices

    NASA Astrophysics Data System (ADS)

    Liu, Zhengchun

    2006-04-01

    In this study, resistor-type, diode-type, and transistor-type organic memory devices were investigated, aiming at the low-cost plastic integrated circuit applications. A series of solution-processing techniques including spin-coating, inkjet printing, and self-assembly were employed to fabricate these devices. The organic resistive memory device is based on a novel molecular complex film composed of tetracyanoquinodimethane (TCNQ) and a soluble methanofullerene derivative [6,6]-phenyl C61-butyric acid methyl ester (PCBM). It has an Al/molecules/Al sandwich structure. The molecular layer was formed by spin-coating technique instead of expensive vacuum deposition method. The current-voltage characteristics show that the device switches from the initial 'low' conduction state to 'high' conduction state upon application of external electric field at room temperature and return to 'low' conduction state when a high current pulse is applied. The on/off ratio is over 106. Each state has been found to remain stable for more than five months, even after the external electric field is removed. The PCBM nanodots wrapped by TCNQ molecules can form potential wells for charge trapping, and are believed to be responsible for the memory effects. A rewritable diode memory device was achieved in an improved configuration, i.e., ITO-PEDOT:PSS-PCBM/TCNQ-Al, where a semiconductor polymer PEDOT:PSS is used to form p+-N heterojunction with PCBM/TCNQ. It exhibits a diode characteristic (low conductive) before switching to a high-conductive Poole-Frenkel regime upon applying a positive external bias to ITO. The on/off ratio at +1.0 V is up to 105. Simulation results from Taurus-Medici are in qualitative agreement with the experimental results and the proposed charge storage model. The transistor-type memory device is fabricated on a heavily doped n-type silicon (n+-Si) substrate with a 100 nm thick thermally-grown oxide layer. The n+-Si serves as the gate electrode, while the oxide layer

  1. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  2. Synthesis and electroluminescent properties of anthracene derivatives containing electron-withdrawing oxide moieties

    SciTech Connect

    Yoon, Jhin-yeong; Na, Eun Jae; Park, Soo Na; Lee, Seok Jae; Kim, Young Kwan; Yoon, Seung Soo

    2014-10-15

    Highlights: • Blue fluorescent material is important for application in full-color displays. • We have synthesized emitters based on anthracene connected with oxide moieties. • 1C shows a highly efficient blue EL emission due to electron-injection property. - Abstract: A series of new blue-emitting materials: (4-(10-(naphthalen-2-yl)anthracen-9-yl)phenyl)(phenyl)methanone (1); 9-(naphthalen-2-yl)-10-(4-((diphenyl)phosphine oxide)phenyl)anthracene (2); 9-(naphthalen-2-yl)-10-(4-(phenylsulfonyl)phenyl)anthracene (3) were designed and synthesized via Suzuki cross-coupling reaction. Multilayer OLEDs were fabricated in the following sequence: ITO (180 nm)/NPB (50 nm)/blue materials 1–3 (30 nm)/TPBi (15 nm)/Liq (2 nm)/Al (100 nm). All devices showed the efficient blue EL emissions. In particular, the device using 1 as an emitter exhibited efficient blue electroluminescent properties with a maximum luminous, power, external quantum efficiency and CIE coordinates of 0.36 cd/A, 0.90 lm/W, 0.55% at 20 mA/cm{sup 2} and (x = 0.16, y = 0.20) at 10.0 V, respectively.

  3. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

  4. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V. PMID:26367556

  5. Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arpan

    Conventional state-of-the-art wurtzite nitrides based light-emitters, grown along the polar c-direction, are characterized by the presence of polarization-induced electrostatic fields in the quantum wells. These built-in fields are detrimental to the performance of optoelectronic devices. Growth of light-emitters along nonpolar and semipolar directions is an effective means to circumvent the adverse effects of polarization. This dissertation focuses on the growth and characterization of nonpolar and semipolar (Al, Ga, In)N based heterostructures and devices. Two nonpolar planes, a- and m-, and two semipolar planes, (10 11) and (1013), have been investigated in this thesis. Initially, the growth of n-type and p-type nonpolar a-plane GaN was optimized to yield cladding layers of the highest possible conductivity in the devices. Various interesting observations, e.g. low acceptor activation energy, anisotropic conductivity, etc, were made during the course of this study. In order to achieve defect reduction in planar a-plane GaN films, in-situ SiNx interlayers were used as nano-mask. The effect of SiNx interlayer on the structural and optical properties of the overgrown GaN layer was investigated. Growth of InGaN/GaN multiple-quantum wells (MQWs) along nonpolar and semipolar planes was investigated and their structural and optical properties were studied. The effect of defects on the emission properties of the MQWs has been addressed. Optical measurements revealed the absence of polarization in the MQWs. Based on the MQW optimization, light-emitting diodes were grown on nonpolar and semipolar templates and their electrical and optical properties were studied. Electroluminescence measurement confirmed the absence of built-in electric fields in the quantum well. We demonstrated the first nonpolar and semipolar light-emitting diodes with milliwatt-range output power. DC output power as high as 0.6 mW at 20 mA and pulsed output power as high as 23.5 mW at 1 A were

  6. Medical devices regulatory aspects: a special focus on polymeric material based devices.

    PubMed

    Sridhar, Radhakrishnan; Pliszka, Damian; Luo, He-Kuan; Chin Lim, Keith Hsiu; Ramakrishna, Seeram

    2015-01-01

    Medical devices form a broad range of appliances from a basic nanoparticle coating or surgical gloves to a complicated laser therapy device. These devices are designed to support patients, surgeons and healthcare personnel in meeting patients' healthcare needs. Regulatory authorities of each country regulate the process of approval, manufacturing and sales of these medical devices so as to ensure safety and quality to patients or users. Recent recalls of medical devices has increased importance of safety, awareness and regulation of the devices. Singapore and India have strong presence and national priorities in medical devices development and use. Herein we capture the rationale of each of these national regulatory bodies and compare them with the medical devices regulatory practices of USA and European nations. Apart from the comparison of various regulatory aspects, this review will specifically throw light on the polymer material based medical devices and their safety.

  7. Magnetic tunnel junction based spintronic logic devices

    NASA Astrophysics Data System (ADS)

    Lyle, Andrew Paul

    The International Technology Roadmap for Semiconductors (ITRS) predicts that complimentary metal oxide semiconductor (CMOS) based technologies will hit their last generation on or near the 16 nm node, which we expect to reach by the year 2025. Thus future advances in computational power will not be realized from ever-shrinking device sizes, but rather by 'outside the box' designs and new physics, including molecular or DNA based computation, organics, magnonics, or spintronic. This dissertation investigates magnetic logic devices for post-CMOS computation. Three different architectures were studied, each relying on a different magnetic mechanism to compute logic functions. Each design has it benefits and challenges that must be overcome. This dissertation focuses on pushing each design from the drawing board to a realistic logic technology. The first logic architecture is based on electrically connected magnetic tunnel junctions (MTJs) that allow direct communication between elements without intermediate sensing amplifiers. Two and three input logic gates, which consist of two and three MTJs connected in parallel, respectively were fabricated and are compared. The direct communication is realized by electrically connecting the output in series with the input and applying voltage across the series connections. The logic gates rely on the fact that a change in resistance at the input modulates the voltage that is needed to supply the critical current for spin transfer torque switching the output. The change in resistance at the input resulted in a voltage margin of 50--200 mV and 250--300 mV for the closest input states for the three and two input designs, respectively. The two input logic gate realizes the AND, NAND, NOR, and OR logic functions. The three input logic function realizes the Majority, AND, NAND, NOR, and OR logic operations. The second logic architecture utilizes magnetostatically coupled nanomagnets to compute logic functions, which is the basis of

  8. Enhanced fluorescence by surface plasmon coupling of Au nanoparticles in an organic electroluminescence diode

    NASA Astrophysics Data System (ADS)

    Fujiki, A.; Uemura, T.; Zettsu, N.; Akai-Kasaya, M.; Saito, A.; Kuwahara, Y.

    2010-01-01

    A significant increase in electroluminescence was achieved through coupling with localized surface plasmons in a single layer of Au nanoparticles. We fabricated a thin-film organic electroluminescence diode, which consists of an indium tin oxide (ITO) anode, a Au nanoparticle array, a Cu phthalocyanine hole transport layer, a tris(8-hydroxylquinolianato) aluminum (III) electron transport layer, a LiF electron injection layer, and an Al cathode. The device structure, with size-controlled Au particles embedded on ITO, can be used to realize the optimum distance for exciton-plasmon interactions by simply adjusting the thickness of the hole transport layer. We observed a 20-fold increase in the molecular fluorescence compared with that of a conventional diode structure.

  9. Electroluminescence in Tb-doped Gd2O2S phosphor

    NASA Astrophysics Data System (ADS)

    Shanker, V.; Chatterjee, S.; Ghosh, P. K.

    1992-12-01

    We report a strong ac green electroluminescence (EL) in powder layers of terbium doped gadolinium oxysulfide (Gd2O2S:Tb) with methyl methacrylate as binder. An intensity of the order of 30 nits (Cd/sq m) has been achieved. The EL emission spectra shows line emissions corresponding to 5D3 and 5D4 fluorescing levels of Tb(3+) ions. A very sharply rising B-V curve normally related to insulator-phosphor interface properties of a thin film electroluminescent device has been observed in these cells. This indicates the possibilities of barrier formation due to the localized space charge region in the absence of any prominent interfaces leading to impact excitation of Tb(3+) ions. This has further been confirmed by the excitation spectrum of Gd2O2S:Tb phosphor, which reveals Tb(3+) impurity absorption bands related to 4f8 shell transitions.

  10. Nanoscale dynamic inhomogeneities in electroluminescence of conjugated polymers

    NASA Astrophysics Data System (ADS)

    Hatano, Tatsuhiko; Nozue, Shuho; Habuchi, Satoshi; Vacha, Martin

    2011-09-01

    We report the observation and characterization of dynamic spatial heterogeneities in the electroluminescence (EL) of conjugated polymer organic light-emitting diodes via high-sensitivity fluorescence microscopy. The active layers of the single-layer devices are polymers of the poly(phenylene vinylene) family, i.e., poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylene vinylene] and a commercially available copolymer, Super Yellow. The devices are prepared directly on a microscope coverslip, making it possible to use high numerical aperture oil-immersion objective lenses with a diffraction-limited resolution of a few hundred nanometers for microscopic EL imaging. Detection via high-sensitivity CCD camera allows the measurement of EL dynamics with millisecond time resolution for a wide range of applied voltages. We found spatial heterogeneities in the form of high EL intensity sites in all devices studied. The EL from these sites is strongly fluctuating in time, and the dynamics is bias voltage dependent. At the same time, there is no difference in the local microscopic EL spectra between the high- and low-intensity sites. The results are interpreted in terms of a changing charge balance and local structural changes in the active film layer.

  11. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  12. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  13. Two-Layer, Full-Color Electroluminescent Display

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.

    1987-01-01

    Full-color, matrix-addressed electroluminescent display uses three different color phosphors located in two separate, superimposed layers to provide higher brightness, better contrast ratio, and higher resolution. Design used for such transparent, flat-panel display media as thin-film electroluminescent phosphors, liquid crystals, or light-emitting diodes.

  14. Diode-laser-based therapy device

    NASA Astrophysics Data System (ADS)

    Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

    2004-10-01

    A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

  15. Antimony Based III-V Thermophotovoltaic Devices

    SciTech Connect

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  16. High-resolution electroluminescent imaging of pressure distribution using a piezoelectric nanowire LED array

    NASA Astrophysics Data System (ADS)

    Pan, Caofeng; Dong, Lin; Zhu, Guang; Niu, Simiao; Yu, Ruomeng; Yang, Qing; Liu, Ying; Wang, Zhong Lin

    2013-09-01

    Emulation of the sensation of touch through high-resolution electronic means could become important in future generations of robotics and human-machine interfaces. Here, we demonstrate that a nanowire light-emitting diode-based pressure sensor array can map two-dimensional distributions of strain with an unprecedented spatial resolution of 2.7 µm, corresponding to a pixel density of 6,350 dpi. Each pixel is composed of a single n-ZnO nanowire/p-GaN light-emitting diode, the emission intensity of which depends on the local strain owing to the piezo-phototronic effect. A pressure map can be created by reading out, in parallel, the electroluminescent signal from all of the pixels with a time resolution of 90 ms. The device may represent a major step towards the digital imaging of mechanical signals by optical means, with potential applications in artificial skin, touchpad technology, personalized signatures, bio-imaging and optical microelectromechanical systems.

  17. Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

    PubMed Central

    Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

    2016-01-01

    Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy. PMID:27677240

  18. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

    PubMed Central

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

  19. A Laboratory-Based Course in Display Technology

    ERIC Educational Resources Information Center

    Sarik, J.; Akinwande, A. I.; Kymissis, I.

    2011-01-01

    A laboratory-based class in flat-panel display technology is presented. The course introduces fundamental concepts of display systems and reinforces these concepts through the fabrication of three display devices--an inorganic electroluminescent seven-segment display, a dot-matrix organic light-emitting diode (OLED) display, and a dot-matrix…

  20. Synaptic devices based on purely electronic memristors

    NASA Astrophysics Data System (ADS)

    Pan, Ruobing; Li, Jun; Zhuge, Fei; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao; Fu, Bing; Li, Kang

    2016-01-01

    Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

  1. Circularly polarised phosphorescent photoluminescence and electroluminescence of iridium complexes

    PubMed Central

    Li, Tian-Yi; Jing, Yi-Ming; Liu, Xuan; Zhao, Yue; Shi, Lin; Tang, Zhiyong; Zheng, You-Xuan; Zuo, Jing-Lin

    2015-01-01

    Nearly all the neutral iridium complexes widely used as dopants in PhOLEDs are racemic mixtures; however, this study observed that these complexes can be separated into stable optically active Λ and ∆ isomers and that their chirality is an intrinsic property. The circularly polarised phosphorescent photoluminescence (CPPPL) signals of Λ/Δ isomers are perfect mirror images with opposite polarisation and equal intensity exhibiting a “handedness” for the polarisation. For the first time, we applied the Λ/Δ iridium isomers as emitters in OLEDs, and the circularly polarised phosphorescent electroluminescence (CPPEL) spectra reveal completely positive or negative broad peaks consistent with the CPPPL spectra. The results demonstrate that the Λ/Δ isomers have potential application for 3D OLEDs because they can exhibit high efficiency and luminance, and 3D display technology based on circularly polarised light is the most comfortable for the eyes. PMID:26446521

  2. Graphene-based liquid crystal device.

    PubMed

    Blake, Peter; Brimicombe, Paul D; Nair, Rahul R; Booth, Tim J; Jiang, Da; Schedin, Fred; Ponomarenko, Leonid A; Morozov, Sergey V; Gleeson, Helen F; Hill, Ernie W; Geim, Andre K; Novoselov, Kostya S

    2008-06-01

    Graphene is only one atom thick, optically transparent, chemically inert, and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but transparent thin films. In this letter, we demonstrate liquid crystal devices with electrodes made of graphene that show excellent performance with a high contrast ratio. We also discuss the advantages of graphene compared to conventionally used metal oxides in terms of low resistivity, high transparency and chemical stability.

  3. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

    PubMed Central

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-01-01

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications. PMID:26138830

  4. Electroluminescent and photosensitive films prepared by DTC-CVD method

    NASA Astrophysics Data System (ADS)

    Zavyalova, Ludmila V.; Svechnikov, George S.

    1997-08-01

    The original chemical vapor deposition (CVD) method used in fabrication A2B6 films, photodetectors and electro- luminescent emitters based on these films have been reported. The basic idea behind this method is thermal decomposition of dithiocarbamates (DTC). The proposed method does not require expensive materials and vacuum equipment. Moreover, the DTC-CVD method differs from the known CVD methods in source material delivery method, a low deposition temperature and a non-sealed reactor geometry. Both CdS and CdS1-xSex were obtained at temperature of 240- 280 degrees C and were activated directly in the grown process by Cu and In, or by annealing in mixture CdS: Cu, Cl. Photodetectors with absorption maxima at 500-750 nm have dark conductivity (sigma) D EQ 10-9 divided by 10-8 (Omega) -1 cm-1 and photoconductivity (sigma) ph equals 10-2 divided by 10-1 (Omega) -1 cm-1 at 200 lux. CdS films with thickness of 6 divided by 12 micrometers have been used as sandwich-type photoconductor detectors. Electroluminescence ZnS:Mn films prepared by DTC-CVD method at the substrate temperature of 200 DIV 300 degrees C without additional annealing have high luminance and luminous efficiency. Deposition at a law temperature makes it possible to use flexible polymer films or low cost glasses as substrates. Because the technique is rather simple and can be applied to obtain all types of thin film electroluminescence structure layers, we expect a low price of light sources based on these films.

  5. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  6. Printable Graphene-based Thermoelectric Device with High Temperature Capability

    NASA Astrophysics Data System (ADS)

    Li, Tian; Chen, Yanan; Drew, Dennis; Hu, Liangbing; NanomaterialsEmerging Devices Collaboration

    Thermoelectric devices are of particular interest due to their capability to convert heat into electrical power. We demonstrate the use of a Graphene-based thermoelectric device that can generate output voltages of hundreds of millivolts with an illuminating Graphene strip as the blackbody source. Our proposed device is superior for thermoelectric conversion mainly due to its high temperature capability that yields a maximum Carnot efficiency limit of 90% (referenced to room temperature) and a high Seebeck coefficient. Our device is also macroscopic with good mechanical strength and stabilized performance, making it attractive for large scale and reliable thermoelectric devices.

  7. The Control of Conjugation Lengths and Steric Hindrance to Modulate Aggregation-Induced Emission with High Electroluminescence Properties and Interesting Optical Properties.

    PubMed

    Xue, Miao-Miao; Xie, Yue-Min; Cui, Lin-Song; Liu, Xiang-Yang; Yuan, Xiao-Dong; Li, Yong-Xi; Jiang, Zuo-Quan; Liao, Liang-Sheng

    2016-01-18

    A series of novel AIE-active (aggregation-induced emission) molecules, named SAF-2-TriPE, SAF-3-TriPE, and SAF-4-TriPE, were designed and synthesized through facile reaction procedures. We found that incorporation of the spiro-acridine-fluorene (SAF) group, which is famous for its excellent hole-transporting ability and rigid structure, at different substitution positions on the phenyl ring affected the conjugation lengths of these compounds. Consequently, we have obtained molecules with different emission colors and properties without sacrificing good EL (electroluminescence) characteristics. Accordingly, a device that was based on compound SAF-2-TriPE displayed superior EL characteristics: it emitted green light with ηc, max =10.5 cd A(-1) and ηext, max =4.22 %, whereas a device that was based on compound SAF-3-TriPE emitted blue-green light with ηc, max =3.9 cd A(-1) and ηext, max = 1.71 %. These compounds also displayed different AIE performances: when the fraction of water in the THF solutions of these compounds was increased, we observed a significant improvement in the ΦF of compounds SAF-2-TriPE and SAF-3-TriPE; in contrast, compound SAF-4-TriPE showed an abnormal phenomenon, in that it emitted a strong fluorescence in both pure THF solution and in the aggregated state without a significant change in ΦF . Overall, this systematic study confirmed a relationship between the regioisomerism of the luminophore structure and its AIE activity and the resulting electroluminescent performance in non-doped devices.

  8. Electrochromic devices based on lithium insertion

    SciTech Connect

    Richardson, Thomas J.

    2006-05-09

    Electrochromic devices having as an active electrode materials comprising Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb, I and chalcogenides are disclosed. The addition of other metals, i.e. Ag and Cu to the active electrode further enhances performance.

  9. Animation Based Learning of Electronic Devices

    ERIC Educational Resources Information Center

    Gero, Aharon; Zoabi, Wishah; Sabag, Nissim

    2014-01-01

    Two-year college teachers face great difficulty when they teach the principle of operation of the bipolar junction transistor--a subject which forms the basis for electronics studies. The difficulty arises from both the complexity of the device and by the lack of adequate scientific background among the students. We, therefore, developed a unique…

  10. Device considerations for development of conductance-based biosensors

    PubMed Central

    Lee, Kangho; Nair, Pradeep R.; Scott, Adina; Alam, Muhammad A.; Janes, David B.

    2009-01-01

    Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors. PMID:24753627

  11. Regulatory science based approach in development of novel medical devices.

    PubMed

    Sakuma, Ichiro

    2015-08-01

    For development rational evaluation method for medical devices' safety and efficacy, regulatory science studies are important. Studies on regulatory affairs related to a medical device under development should be conducted as well as its technological development. Clinical performance of a medical device is influenced by performance of the device, medical doctors' skill, pathological condition of a patient, and so on. Thus it is sometimes difficult to demonstrate superiority of the device in terms of clinical outcome although its efficacy as a medical device is accepted. Setting of appropriate end points is required to evaluate a medical device appropriately. Risk assessment and risk management are the basis of medical device safety assurance. In case of medical device software, there are difficulties in identifying the risk due to its complexity of user environment and different design and manufacturing procedure compared with conventional hardware based medical devices. Recent technological advancement such as information and communication technologies (ICT) for medical devices and wireless network has raised new issue on risk management: cybersecurity. We have to watch closely the progress of safety standard development. PMID:26736611

  12. Regulatory science based approach in development of novel medical devices.

    PubMed

    Sakuma, Ichiro

    2015-08-01

    For development rational evaluation method for medical devices' safety and efficacy, regulatory science studies are important. Studies on regulatory affairs related to a medical device under development should be conducted as well as its technological development. Clinical performance of a medical device is influenced by performance of the device, medical doctors' skill, pathological condition of a patient, and so on. Thus it is sometimes difficult to demonstrate superiority of the device in terms of clinical outcome although its efficacy as a medical device is accepted. Setting of appropriate end points is required to evaluate a medical device appropriately. Risk assessment and risk management are the basis of medical device safety assurance. In case of medical device software, there are difficulties in identifying the risk due to its complexity of user environment and different design and manufacturing procedure compared with conventional hardware based medical devices. Recent technological advancement such as information and communication technologies (ICT) for medical devices and wireless network has raised new issue on risk management: cybersecurity. We have to watch closely the progress of safety standard development.

  13. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  14. Controlled electroluminescence from films composed of mixed bio-composites and nanotubes.

    PubMed

    Hendler, Netta; Mentovich, Elad D; Belgorodsky, Bogdan; Rimmerman, Dolev; Richter, Shachar

    2013-12-16

    Good things come in threes: A new type of light emitting bio-composites allowing for the nanometric separation of the active components is demonstrated. A protein with large host-guest capacities is used for the encapsulation of a water-soluble composite dye in a nano-sized shell, which efficiently reduces Förster resonance energy transfer and related mechanisms. Blending of this bio-composite with multi-walled nanotubes increases the charge injection efficiency, in the electro-luminescent device.

  15. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    SciTech Connect

    Shi, Zhifeng; Zhang, Yuantao Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong; Yang, Xiaotian

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  16. OLED devices with internal outcoupling

    DOEpatents

    Liu, Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2015-03-03

    Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

  17. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Benz, R., II

    1987-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as accessed by x ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  18. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  19. Measurement of the hematocrit using paper-based microfluidic devices.

    PubMed

    Berry, Samuel B; Fernandes, Syrena C; Rajaratnam, Anjali; DeChiara, Nicholas S; Mace, Charles R

    2016-10-01

    The quantification of blood cells provides critical information about a patient's health status. Sophisticated analytical equipment, such as hematology analyzers, have been developed to perform these measurements, but limited-resource settings often lack the infrastructure required to purchase, operate, and maintain instrumentation. To address these practical challenges, paper-based microfluidic devices have emerged as a platform to develop diagnostic assays specifically for use at the point-of-care. To date, paper-based microfluidic devices have been used broadly in diagnostic assays that apply immunoassay, clinical chemistry, and electrochemistry techniques. The analysis of cells, however, has been largely overlooked. In this communication, we demonstrate a paper-based microfluidic device that enables the controlled transport of red blood cells (RBCs) and the measurement of the hematocrit-the ratio of RBC packed cell volume to total volume of whole blood. The properties of paper, device treatment, and device geometry affect the overall extent and reproducibility of transport of RBCs. Ultimately, we developed an inexpensive (US$0.03 per device) thermometer-styled device where the distance traveled by RBCs is proportional to the hematocrit. These results provide a foundation for the design of paper-based microfluidic devices that enable the separation and detection of cells in limited-resource settings. PMID:27604182

  20. Measurement of the hematocrit using paper-based microfluidic devices.

    PubMed

    Berry, Samuel B; Fernandes, Syrena C; Rajaratnam, Anjali; DeChiara, Nicholas S; Mace, Charles R

    2016-10-01

    The quantification of blood cells provides critical information about a patient's health status. Sophisticated analytical equipment, such as hematology analyzers, have been developed to perform these measurements, but limited-resource settings often lack the infrastructure required to purchase, operate, and maintain instrumentation. To address these practical challenges, paper-based microfluidic devices have emerged as a platform to develop diagnostic assays specifically for use at the point-of-care. To date, paper-based microfluidic devices have been used broadly in diagnostic assays that apply immunoassay, clinical chemistry, and electrochemistry techniques. The analysis of cells, however, has been largely overlooked. In this communication, we demonstrate a paper-based microfluidic device that enables the controlled transport of red blood cells (RBCs) and the measurement of the hematocrit-the ratio of RBC packed cell volume to total volume of whole blood. The properties of paper, device treatment, and device geometry affect the overall extent and reproducibility of transport of RBCs. Ultimately, we developed an inexpensive (US$0.03 per device) thermometer-styled device where the distance traveled by RBCs is proportional to the hematocrit. These results provide a foundation for the design of paper-based microfluidic devices that enable the separation and detection of cells in limited-resource settings.

  1. Organic electronic and photonic devices based on pentacene and modified oligo-p-phenylenevinylenes

    NASA Astrophysics Data System (ADS)

    Gorjanc, Timothy C.

    temperature was held between room temperature and 225°C. The resulting films were characterized by powder x-ray diffraction and atomic for microscopy. Both of these techniques indicated that the thin films formed a lamellar structure parallel to the substrate surface with the lamella thickness corresponding to the length of the molecule, between 42 and 44 A. The different monolayers did not seem to effect the thickness of the lamella but did increase the size of the grains. Both oligomers were used in single and multi-layer organic light emitting diodes. The single layer organic light emitting diodes displayed faint electroluminescence while the multi-layer devices displayed more intense electroluminescence. The electroluminescence and fluorescence spectra are identical, indicating that recombination occurs solely within the oligomer layer. In the multi-layer organic light emitting diodes, different hole transporting materials such as were used in conjunction with the oligomers, which were employed as the emitter. The devices that generated the most intense electroluminescence were the N,N'-diphenyl-N,N'-bis(3-methylphenyl benzadine)/bis-(4,4'-(octylbiphenyl)ethenyl)phenyl device had a luminance of 174 cd/m2 and the N,N'-diphenyl-N,N'-bis(3-methylphenyl benzadine)/bis(4,4'-(biphenyl)ethenyl)phenyl device was brighter with a luminance of 580 cd/m2.

  2. Product-based Safety Certification for Medical Devices Embedded Software.

    PubMed

    Neto, José Augusto; Figueiredo Damásio, Jemerson; Monthaler, Paul; Morais, Misael

    2015-01-01

    Worldwide medical device embedded software certification practices are currently focused on manufacturing best practices. In Brazil, the national regulatory agency does not hold a local certification process for software-intensive medical devices and admits international certification (e.g. FDA and CE) from local and international industry to operate in the Brazilian health care market. We present here a product-based certification process as a candidate process to support the Brazilian regulatory agency ANVISA in medical device software regulation. Center of Strategic Technology for Healthcare (NUTES) medical device embedded software certification is based on a solid safety quality model and has been tested with reasonable success against the Class I risk device Generic Infusion Pump (GIP).

  3. [Improved color purity of green OLED device based on Au thin film].

    PubMed

    Zhang, Yan-Fei; Zhao, Su-Ling; Xu, Zheng

    2014-04-01

    Au was used as anode in some kind of organic electroluminescent devices. Sometimes transparent Au electrodes are required, which means that the thickness of Au electrode should be as thin as possible. Therefore, two metals together forming an electrode become a choice. In the present paper, translucent Au/Al layer was inserted to anode side, and OLED device with the structure of ITO/Al (16 nm)/Au (10 nm)/TPD (30 nm)/AlQ (30 nm)/LiF (0.5 nm)/Al was prepared. There is a spectral narrowing phenomenon on the device ITO/TPD (30 nm)/AlQ (30 nm)/LiF (0. 5 nm)/Al, and through analysis and experiment it was found that this phenomenon comes from selective permeability to light of Au thin film rather than the microcavity effect. The device maintains wide viewing angle, without the angular dependence. And the color purity of device with Au thin film is improved.

  4. Synthesis and spectroscopic study of highly fluorescent β-enaminone based boron complexes

    NASA Astrophysics Data System (ADS)

    Kumbhar, Haribhau S.; Gadilohar, Balu L.; Shankarling, Ganapati S.

    2015-07-01

    The newly synthesized 1, 1, 2-trimethyl-1H benzo[e]indoline based β-enaminone boron complexes exhibited the intense fluorescence (Fmax = 522-547 nm) in solution as well as in solid state (Fmax = 570-586 nm). These complexes exhibited large stoke shift, excellent thermal and photo stability when compared to the boron dipyrromethene (BODIPY) colorants. Optimized geometry and orbital distribution in ground states were computed by employing density functional theory (DFT). The cyclic voltammetry study revealed the better electron transport ability of these molecules than current electroluminescent materials like tris(8-hydroxyquinoli-nato)-aluminium (Alq3) and BODIPY, which can find application in electroluminescent devices.

  5. Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices

    NASA Astrophysics Data System (ADS)

    López-Vidrier, J.; Berencén, Y.; Hernández, S.; Blázquez, O.; Gutsch, S.; Laube, J.; Hiller, D.; Löper, P.; Schnabel, M.; Janz, S.; Zacharias, M.; Garrido, B.

    2013-10-01

    Charge transport and electroluminescence mechanisms in Si-rich Si oxynitride/silicon oxide (SRON/SiO2) superlattices deposited on p-type Si substrate are reported. The superlattice structures were deposited by plasma-enhanced chemical-vapor deposition and subsequently annealed at 1150 °C to precipitate and crystallize the Si excess into Si nanocrystals. The dependence of the electrical conduction on the applied voltage and temperature was found to be well described by a Poole-Frenkel transport mechanism over a wide voltage range. On the other hand, the observed dependence of the electroluminescence on the SRON layer thickness is a clear proof of quantum confinement and was attributed to an excitonic radiative recombination taking place in the confined states within the Si quantum dots. A model is proposed based on thermal hopping of electrons between the quantum dots acting as trap states (Poole-Frenkel). A correlation between carrier transport and electroluminescence has been established considering impact ionization of high-kinetic energy electrons on the Si quantum dots.

  6. A Flexible Microcontroller-Based Data Acquisition Device

    PubMed Central

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment. PMID:24892494

  7. A flexible microcontroller-based data acquisition device.

    PubMed

    Hercog, Darko; Gergič, Bojan

    2014-06-02

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  8. Innovative energy absorbing devices based on composite tubes

    NASA Astrophysics Data System (ADS)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  9. Performance of Electroluminescent Flats for Precision Light Curve Photometry

    NASA Astrophysics Data System (ADS)

    Avril, Ryan L.; Oberst, T. E.

    2014-01-01

    We measure of the quality of flat field frames (flats) taken using an electroluminescent (EL) panel versus both dome and sky flats for purposes of calibrating visual CCD images. Classic dome and sky flats can both suffer from overall gradients and local irregularities. EL panel flats have recently grown in popularity as a third alternative, based partly on their potential to be free of such defects. We assess the flats based on their contributions to the RMS noise of long-duration light curves constructed via differential aperture photometry. The noise levels explored range from ~ 1 - few mmag, as needed for the ground-based detection of transiting planets. The target and reference stars are deliberately permitted to drift across the CCD in order to probe pixel-to-pixel variations. Both the filter and focus are varied during the tests - the former to probe color variation in the flats, and the latter because defocusing tends to average out pixel-to-pixel variations that the flats are intended to remove. All tests were performed at the Westminster College Observatory (WCO), which belongs to the Kilodegree Extremely Little Telescope (KELT)-North follow-up network.

  10. Substrate structures for InP-based devices

    DOEpatents

    Wanlass, Mark W.; Sheldon, Peter

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

  11. Graphene gate electrode for MOS structure-based electronic devices.

    PubMed

    Park, Jong Kyung; Song, Seung Min; Mun, Jeong Hun; Cho, Byung Jin

    2011-12-14

    We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the quantum mechanical tunneling current from the gate electrode. This concept is applied to nonvolatile Flash memory devices, whose performance is critically affected by the quality of the gate dielectric. Charge-trap flash (CTF) memory with a graphene gate electrode shows superior data retention and program/erase performance that current CTF devices cannot achieve. The findings of this study can lead to new applications of graphene, not only for Flash memory devices but also for other high-performance and mass-producible electronic devices based on MOS structure which is the mainstream of the electronic device industry.

  12. Thread based devices for low-cost diagnostics.

    PubMed

    Reches, Meital

    2013-01-01

    The need for low-cost diagnostic devices, both for developing and industrial countries, has led to the search for inexpensive matrixes that will allow the performance of analytical assays. One approach uses paper to create multiple microfluidic channels which allow analytes in urine or blood to flow to different detection zones the device. The choice of paper arises from its low-cost and its ability to wick biological fluids by capillary forces (i.e., an external power is not required to move fluid in a device). This chapter describes the use of a common material-cotton thread-as an alternative matrix for low-cost diagnostics. Thread-based devices can be fabricated using established techniques that rely on common house-hold tools for manipulating threads (e.g., sewing machines and looms). The fabrication schemes described here could potentially be adapted for large-scale manufacturing of diagnostic devices.

  13. Pure white OLED based on an organic small molecule: 2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine.

    PubMed

    Liu, Jian

    2015-10-01

    2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine (DBIP) was synthesized. The single-crystal structure of DBIP was resolved. DBIP-based OLED was fabricated. The electroluminescence for the device corresponds to a pure white emission. In addition, thermal stability, UV-vis, photoluminescence and electrochemical behaviors of DBIP were investigated as well.

  14. Medical Device Integration Model Based on the Internet of Things

    PubMed Central

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  15. Medical Device Integration Model Based on the Internet of Things.

    PubMed

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  16. Medical Device Integration Model Based on the Internet of Things.

    PubMed

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  17. A Rhythm-Based Authentication Scheme for Smart Media Devices

    PubMed Central

    Lee, Jae Dong; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience. PMID:25110743

  18. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    SciTech Connect

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok; Jeon, In-Jun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong Han

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  19. Photoluminescence and electroluminescence characteristics of CaSiN2:Eu phosphor

    NASA Astrophysics Data System (ADS)

    Lee, Soon S.; Lim, Sungkyoo; Sun, Sey-Shing; Wager, John F.

    1997-11-01

    Photoluminescenc eand electroluminescence of CaSiN2:Eu materials were investigted to develop a new phosphor for thin film electroluminescence (TFEL) device applications. Ca3N2 and Si3N4 powders were mixed to form CaSiN2 hostmaterials and Eu was added as the luminescent center. The mixed powermatrials were cold pressed under the pressure of 1 Kg/cm2 to make pellets, and fired at 1400 degrees Celsius for 2 hours under N2H2 envrionemtn. Th ex-ry diffraction(CRD) patterns of synthesizd materals wer well matched with CaSiN2 of joint committee for powder diffraction standards (JCPDS) csrad. When illuminated by ultravilet rays, th enew phosphors emitted very bright red ligh of peak wav lenegth centered at 620 nm. Th TFEL devices with CaSiN2:Eu phosphor layser swre grown by sputter depositonof CaSiN2:Eu target. Red light emission was observed when the peak amplitude of the applied voltge exceeded 116 V.l The luminance was shown to increase sharply withth increase of the applied voltage. The maximum luminance was 1.62 Cd/m2 at the applied peak voltage of 276 V. The red emission from CaSiN2:Eu TFEL device seems to result from electronic transition of Eu3+ ions.The emission spectra of TFEl devices matchwell withth ephotoluminescence spectra of CaSiN2:Ey powders. The new devices structure and fabrication processes for the iimprovement of emission intenityof CaSiN2:Eu TFEl devices ar under investigation.

  20. Isotachophoretic preconcenetration on paper-based microfluidic devices.

    PubMed

    Moghadam, Babak Y; Connelly, Kelly T; Posner, Jonathan D

    2014-06-17

    Paper substrates have been widely used to construct point-of-care lateral flow immunoassay (LFIA) diagnostic devices. Paper based microfluidic devices are robust and relatively simple to operate, compared to channel microfluidic devices, which is perhaps their greatest advantage and the reason they have reached a high level of commercial success. However, paper devices may not be well suited for integrated sample preparation, such as sample extraction and preconcentration, which is required in complex samples with low analyte concentrations. In this study, we investigate integration of isotachophoresis (ITP), an electrokinetic preconcentration and extraction technique, onto nitrocellulose-based paper microfluidic devices with the goal to improve the limit of detection of LFIA. ITP has been largely used in traditional capillary based microfluidic devices as a pretreatment method to preconcentrate and separate a variety of ionic compounds. Our findings show that ITP on nitrocellulose is capable of up to a 900 fold increase in initial sample concentration and up to 60% extraction from 100 μL samples and more than 80% extraction from smaller sample volumes. Paper based ITP is challenged by Joule heating and evaporation because it is open to the environment. We achieved high preconcentration by mitigating evaporation induced dispersion using novel cross-shaped device structures that keep the paper hydrated. We show that ITP on the nitrocellulose membrane can be powered and run several times by a small button battery suggesting that it could be integrated to a portable point-of-care diagnostic device. These results highlight the potential of ITP to increase the sensitivity of paper based LFIA under conditions where small analyte concentrations are present in complex biological samples.

  1. Magneto-optical switching devices based on Si resonators

    NASA Astrophysics Data System (ADS)

    Noda, Kazuki; Okada, Kazuya; Amemiya, Yoshiteru; Yokoyama, Shin

    2016-04-01

    The magneto-optical switching devices based on Si ring and Si photonic crystal resonators have been fabricated using a Bi3Fe5O12 (BIG) film deposited by the metal organic decomposition (MOD) method. The quality of the obtained BIG film was evaluated by X-ray diffraction and the magneto-optical Kerr effect and relatively good results were obtained. The light modulations of both devices were ≦20% at a wavelength of ˜1.5 µm. The operation mechanisms of both devices are explained by the Cotton-Mouton effect where the magnetic field direction is perpendicular to the light propagation direction.

  2. Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices

    PubMed Central

    O'Toole, Martina; Diamond, Dermot

    2008-01-01

    The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements.

  3. Mobile device-based optical instruments for agriculture

    NASA Astrophysics Data System (ADS)

    Sumriddetchkajorn, Sarun

    2013-05-01

    Realizing that a current smart-mobile device such as a cell phone and a tablet can be considered as a pocket-size computer embedded with a built-in digital camera, this paper reviews and demonstrates on how a mobile device can be specifically functioned as a portable optical instrument for agricultural applications. The paper highlights several mobile device-based optical instruments designed for searching small pests, measuring illumination level, analyzing spectrum of light, identifying nitrogen status in the rice field, estimating chlorine in water, and determining ripeness level of the fruit. They are suitable for individual use as well as for small and medium enterprises.

  4. Electrochemical model of the polyaniline based organic memristive device

    SciTech Connect

    Demin, V. A. E-mail: victor.erokhin@fis.unipr.it; Erokhin, V. V. E-mail: victor.erokhin@fis.unipr.it; Kashkarov, P. K.; Kovalchuk, M. V.

    2014-08-14

    The electrochemical organic memristive device with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, including the neuromorphic networks capable for learning. In this work, a new theoretical model of the polyaniline memristive is presented. The developed model of organic memristive functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment but also the quantitative similarities of the resultant current values. It is shown how the memristive could behave at zero potential difference relative to the reference electrode. This improved model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices.

  5. Uncover the electroluminescence in wide band gap polymers

    NASA Astrophysics Data System (ADS)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    2015-10-01

    Due to the rapidly increasing demand of electric power, insulating materials used in electrical components are pushed up to their limits, where their electronic properties are of fundamental importance. Electroluminescence provides an elegant way to investigate electronic properties, high field effects and electrical ageing of polymers although the emission spectrum is still poorly understood. Unlike in organic semi-conductors, electroluminescence spectra of large band gap polymers exhibit specific spectral features that cannot be interpreted on the basis of the photo-physical properties of the material. By irradiating polypropylene thin films with electrons up to a few keV and by analyzing the emitted light, we were able to isolate the elementary components of the emission and to reconstruct the electroluminescence spectrum. For the first time, a comprehensive study of electroluminescence in polymers is provided and the underlying mechanisms of the emission are discussed. The results herein provide an univocal demonstration that the electroluminescence from wide band gap polymers results in part from chemical reactions, opening the way to the diagnosis and prognosis of polymeric materials under electrical stress.

  6. Microwave based civil structure inspection device

    SciTech Connect

    Sohns, C.W.; Bible, D.W.

    1994-06-01

    A microwave based ``wall probe`` has been developed which is capable of nondestructive evaluation of architectural structures. By using microwaves in the 8 to 12 GHz range this probing instrument can detect subsurface characteristics through concrete, brick, wood or other building materials to depths in excess of 12 inches. The instrument interrogates a structure from a single side by transmitting a microwave signal into the surface at some angle of incidence and receiving the reflected signal some distance away on the same side of the structure. The transmitted signal is partially reflected at each internal boundary of different dielectric constant, giving a composite reflection which contains information from each internal layer. The reflected composite signal is compared in phase and amplitude to the transmitted signal and that reading is considered the ``signature`` of the structure under test. Computer algorithms analyze the signature for recognizable features and nonstandard construction.

  7. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  8. Tunable Near-Infrared Luminescence in Tin Halide Perovskite Devices.

    PubMed

    Lai, May L; Tay, Timothy Y S; Sadhanala, Aditya; Dutton, Siân E; Li, Guangru; Friend, Richard H; Tan, Zhi-Kuang

    2016-07-21

    Infrared emitters are reasonably rare in solution-processed materials. Recently, research into hybrid organo-lead halide perovskite, originally popular in photovoltaics,1-3 has gained traction in light-emitting diodes (LED) due to their low-cost solution processing and good performance.4-9 The lead-based electroluminescent materials show strong colorful emission in the visible region, but lack emissive variants further in the infrared. The concerns with the toxicity of lead may, additionally, limit their wide-scale applications. Here, we demonstrate tunable near-infrared electroluminescence from a lead-free organo-tin halide perovskite, using an ITO/PEDOT:PSS/CH3NH3Sn(Br1-xIx)3/F8/Ca/Ag device architecture. In our tin iodide (CH3NH3SnI3) LEDs, we achieved a 945 nm near-infrared emission with a radiance of 3.4 W sr(-1) m(-2) and a maximum external quantum efficiency of 0.72%, comparable with earlier lead-based devices. Increasing the bromide content in these tin perovskite devices widens the semiconductor bandgap and leads to shorter wavelength emissions, tunable down to 667 nm. These near-infrared LEDs could find useful applications in a range of optical communication, sensing and medical device applications.

  9. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    PubMed Central

    Kamminga, Jacob; Le, Duc; Havinga, Paul

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and suffer from uncertain input latencies. This uncertainty makes accurate localization challenging. Therefore, we present a collaborative localization algorithm (Cooperative Localization on Android with ambient Sound Sources (CLASS)) that simultaneously localizes the position of indeterministic devices and ambient sound sources without local infrastructure. The CLASS algorithm deals with the uncertainty by splitting the devices into subsets so that outliers can be removed from the time difference of arrival values and localization results. Since Android is indeterministic, we select Android devices to evaluate our approach. The algorithm is evaluated with an outdoor experiment and achieves a mean Root Mean Square Error (RMSE) of 2.18 m with a standard deviation of 0.22 m. Estimated directions towards the sound sources have a mean RMSE of 17.5° and a standard deviation of 2.3°. These results show that it is feasible to simultaneously achieve a relative positioning of both devices and sound sources with sufficient accuracy, even when using non-deterministic devices and platforms, such as Android. PMID:27649176

  10. Ambient Sound-Based Collaborative Localization of Indeterministic Devices.

    PubMed

    Kamminga, Jacob; Le, Duc; Havinga, Paul

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and suffer from uncertain input latencies. This uncertainty makes accurate localization challenging. Therefore, we present a collaborative localization algorithm (Cooperative Localization on Android with ambient Sound Sources (CLASS)) that simultaneously localizes the position of indeterministic devices and ambient sound sources without local infrastructure. The CLASS algorithm deals with the uncertainty by splitting the devices into subsets so that outliers can be removed from the time difference of arrival values and localization results. Since Android is indeterministic, we select Android devices to evaluate our approach. The algorithm is evaluated with an outdoor experiment and achieves a mean Root Mean Square Error (RMSE) of 2.18 m with a standard deviation of 0.22 m. Estimated directions towards the sound sources have a mean RMSE of 17.5 ° and a standard deviation of 2.3 °. These results show that it is feasible to simultaneously achieve a relative positioning of both devices and sound sources with sufficient accuracy, even when using non-deterministic devices and platforms, such as Android.

  11. Ambient Sound-Based Collaborative Localization of Indeterministic Devices.

    PubMed

    Kamminga, Jacob; Le, Duc; Havinga, Paul

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and suffer from uncertain input latencies. This uncertainty makes accurate localization challenging. Therefore, we present a collaborative localization algorithm (Cooperative Localization on Android with ambient Sound Sources (CLASS)) that simultaneously localizes the position of indeterministic devices and ambient sound sources without local infrastructure. The CLASS algorithm deals with the uncertainty by splitting the devices into subsets so that outliers can be removed from the time difference of arrival values and localization results. Since Android is indeterministic, we select Android devices to evaluate our approach. The algorithm is evaluated with an outdoor experiment and achieves a mean Root Mean Square Error (RMSE) of 2.18 m with a standard deviation of 0.22 m. Estimated directions towards the sound sources have a mean RMSE of 17.5 ° and a standard deviation of 2.3 °. These results show that it is feasible to simultaneously achieve a relative positioning of both devices and sound sources with sufficient accuracy, even when using non-deterministic devices and platforms, such as Android. PMID:27649176

  12. Fiber-based devices for DWDM optical communication systems

    NASA Astrophysics Data System (ADS)

    Gu, Claire; Xu, Yuan; Liu, Yisi; Pan, Jing-Jong; Zhou, Fengqing; Dong, Liang; He, Henry

    2005-01-01

    Photonic devices with low insertion loss are important in dense wavelength division multiplexing (DWDM) systems. Currently most of these devices, such as variable optical attenuators (VOA), switches, filters, and dispersion compensators, etc., involve bulk (or micro-optic) components that require conversions between fibers and free-space optical elements leading to high insertion loss. Recently, we have proposed, analyzed, and demonstrated several fiber based devices for DWDM optical communication systems. Here we present an in-line fiber VOA, a 2x2 switchable wavelength add/drop filter, and high performance dispersion compensators. The VOA is built with a side-polished fiber covered with a liquid crystal overlay. By varying the orientation of the liquid crystal molecules using an applied electric field, the loss of the device can be controlled. The 2x2 wavelength switch is designed by recording electrically switchable holographic gratings in a layer of holographic polymer dispersed liquid crystal (H-PDLC) sandwiched between two side-polished fibers. The dispersion compensators are based on high precision fiber Bragg gratings (FBG). A unique method for writing FBGs with arbitrary phase and amplitude distributions is demonstrated. All of these devices are analyzed theoretically and demonstrated experimentally. Both theoretical and experimental results will be presented and discussed. These devices are suitable for DWDM optical information transmission and network management.

  13. Ferromagnetic cross junction based spin wave logic device

    NASA Astrophysics Data System (ADS)

    Kozhanov, Alexander

    2014-03-01

    Spin wave based signal processing/logic devices have long history of development and exploration. Typically the spin wave phase is used to encode the input information. Spin wave interference is used to produce the device output in form of the spin wave amplitude. Electronic amplitude-to-phase signal converter is required to build a logic gate capable of providing necessary fan-out. In case of destructive interference the phase information is lost and a ``new'' wave should be excited at the next logic stage. In this work we demonstrate the spin wave interference in ferromagnetic CoTaZr cross and propose a spin wave logic device based on this structure. Two neighboring arms of the cross serve as the device inputs. For the certain input wave phase offsets the interference is constructive in one output arm of the cross while destructive in another and vice versa thus resulting in a phase controlled spin wave switching. The output waves in the cross arms have different phase offsets dependent on the input wave phase offset. By merging the spin waves scattered into the cross output arms the device output is formed with a wave phase following the OR/NOR logic operation. We model local spin wave scattering in the cross center and discuss the effect of the local spin wave modes in the cross junction on the proposed device operation. Supported by Georgia State University.

  14. Polyurethane-based microfluidic devices for blood contacting applications.

    PubMed

    Wu, Wen-I; Sask, Kyla N; Brash, John L; Selvaganapathy, P Ravi

    2012-03-01

    Protein adsorption on PDMS surfaces poses a significant challenge in microfluidic devices that come into contact with biofluids such as blood. Polyurethane (PU) is often used for the construction of medical devices, but despite having several attractive properties for biointerfacing, it has not been widely used in microfluidic devices. In this work we developed two new fabrication processes for making thin, transparent and flexible PU-based microfluidic devices. Methods for the fabrication and bonding of microchannels, the integration of fluidic interconnections and surface modification with hydrophilic polyethylene oxide (PEO) to reduce protein adsorption are detailed. Using these processes, microchannels were produced having high transparency (96% that of glass in visible light), high bond strength (326.4 kPa) and low protein adsorption (80% reduction in fibrinogen adsorption vs. unmodified PDMS), which is critical for prevention of fouling. Our findings indicate that PEO modified PU could serve as an effective alternative to PDMS in blood contacting microfluidic applications.

  15. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  16. Magnetophoretic-based microfluidic device for DNA Concentration.

    PubMed

    Shim, Sangjo; Shim, Jiwook; Taylor, William R; Kosari, Farhad; Vasmatzis, George; Ahlquist, David A; Bashir, Rashid

    2016-04-01

    Nucleic acids serve as biomarkers of disease and it is highly desirable to develop approaches to extract small number of such genomic extracts from human bodily fluids. Magnetic particles-based nucleic acid extraction is widely used for concentration of small amount of samples and is followed by DNA amplification in specific assays. However, approaches to integrate such magnetic particles based capture with micro and nanofluidic based assays are still lacking. In this report, we demonstrate a magnetophoretic-based approach for target-specific DNA extraction and concentration within a microfluidic device. This device features a large chamber for reducing flow velocity and an array of μ-magnets for enhancing magnetic flux density. With this strategy, the device is able to collect up to 95 % of the magnetic particles from the fluidic flow and to concentrate these magnetic particles in a collection region. Then an enzymatic reaction is used to detach the DNA from the magnetic particles within the microfluidic device, making the DNA available for subsequent analysis. Concentrations of over 1000-fold for 90 bp dsDNA molecules is demonstrated. This strategy can bridge the gap between detection of low concentration analytes from clinical samples and a range of micro and nanofluidic sensors and devices including nanopores, nano-cantilevers, and nanowires.

  17. Silicon Nanowire-Based Devices for Gas-Phase Sensing

    PubMed Central

    Cao, Anping; Sudhölter, Ernst J.R.; de Smet, Louis C.P.M.

    2014-01-01

    Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed. PMID:24368699

  18. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  19. Accelerated UV weathering device based on integrating sphere technology

    SciTech Connect

    Chin, Joannie; Byrd, Eric; Embree, Ned; Garver, Jason; Dickens, Brian; Finn, Tom; Martin, Jonathan

    2004-11-01

    An ultraviolet (UV) weathering device based on integrating sphere technology has been designed, fabricated, and implemented for studying the accelerated weathering of polymers. This device has the capability of irradiating multiple test specimens with uniform, high intensity UV radiation while simultaneously subjecting them to a wide range of precisely and independently controlled temperature and relative humidity environments. This article describes the integrating sphere-based weathering system, its ability to precisely control temperature and relative humidity, and its ability to produce a highly uniform UV irradiance.

  20. A conductive liquid-based surface acoustic wave device.

    PubMed

    Nam, Jeonghun; Lim, Chae Seung

    2016-10-01

    Surface acoustic wave-based microfluidic devices are popular for fluid and particle manipulation because of their noninvasiveness, low energy consumption, and easy integration with other systems. However, they have been limited by the use of patterned metal electrodes on a piezoelectric substrate, which requires expensive and complicated fabrication processes. Herein, we show a simpler and more cost-effective method for generating surface acoustic waves using eutectic gallium indium as a conductive liquid which can replace conventional patterned metal electrodes. We also demonstrate the comparable performance for acoustic streaming and mixing using conductive liquid-based surface acoustic wave devices. PMID:27528442

  1. A conductive liquid-based surface acoustic wave device.

    PubMed

    Nam, Jeonghun; Lim, Chae Seung

    2016-10-01

    Surface acoustic wave-based microfluidic devices are popular for fluid and particle manipulation because of their noninvasiveness, low energy consumption, and easy integration with other systems. However, they have been limited by the use of patterned metal electrodes on a piezoelectric substrate, which requires expensive and complicated fabrication processes. Herein, we show a simpler and more cost-effective method for generating surface acoustic waves using eutectic gallium indium as a conductive liquid which can replace conventional patterned metal electrodes. We also demonstrate the comparable performance for acoustic streaming and mixing using conductive liquid-based surface acoustic wave devices.

  2. Content-based image retrieval on mobile devices

    NASA Astrophysics Data System (ADS)

    Ahmad, Iftikhar; Abdullah, Shafaq; Kiranyaz, Serkan; Gabbouj, Moncef

    2005-03-01

    Content-based image retrieval area possesses a tremendous potential for exploration and utilization equally for researchers and people in industry due to its promising results. Expeditious retrieval of desired images requires indexing of the content in large-scale databases along with extraction of low-level features based on the content of these images. With the recent advances in wireless communication technology and availability of multimedia capable phones it has become vital to enable query operation in image databases and retrieve results based on the image content. In this paper we present a content-based image retrieval system for mobile platforms, providing the capability of content-based query to any mobile device that supports Java platform. The system consists of light-weight client application running on a Java enabled device and a server containing a servlet running inside a Java enabled web server. The server responds to image query using efficient native code from selected image database. The client application, running on a mobile phone, is able to initiate a query request, which is handled by a servlet in the server for finding closest match to the queried image. The retrieved results are transmitted over mobile network and images are displayed on the mobile phone. We conclude that such system serves as a basis of content-based information retrieval on wireless devices and needs to cope up with factors such as constraints on hand-held devices and reduced network bandwidth available in mobile environments.

  3. Biological fabrication of nanostructured silicon-germanium photonic crystals possessing unique photoluminescent and electroluminescent properties

    NASA Astrophysics Data System (ADS)

    Rorrer, Gregory L.; Jeffryes, Clayton; Chang, Chih-hung; Lee, Doo-Hyoung; Gutu, Timothy; Jiao, Jun; Solanki, Raj

    2007-09-01

    Diatoms are single-celled algae which possess silica shells called "frustules" that contain periodic submicron scale features. A diatom cell culture process was used to fabricate a two-dimensional photonic crystal slab of Ge-doped biosilica that possessed 120 nm holes, 330 nm lattice constant, and dielectric constant of 8.5. This material was integrated into an electroluminescent (EL) device by spin coating of the frustules onto indium tin oxide, followed by atomic layer deposition of 400 nm hafnium silicate. No photonic band gap was predicted. However, the EL spectrum possessed resonant UV line emissions that were consistent with photonic band calculations. An EL band gap between 500-640 nm was also observed between blue and red EL line emissions. These EL characteristics have not been observed previously, and are unique to the diatom photonic crystal. This study represents a first step towards the realization of optoelectronic devices which utilize nanoscale components fabricated through cell culture.

  4. Transient electroluminescence dynamics in small molecular organic light-emitting diodes

    SciTech Connect

    Gan, Z; Liu, R; Shinar, R; Shinar, J

    2010-09-14

    Intriguing electroluminescence (EL) spikes, following a voltage pulse applied to small molecular OLEDs, are discussed, elucidating carrier and exciton quenching dynamics and their relation to device structure. At low temperatures, all devices exhibit spikes at {approx} 70-300 ns and {mu}s-long tails. At 295 K only those with a hole injection barrier, carrier-trapping guest-host emitting layer, and no strong hole-blocking layer exhibit the spikes. They narrow and appear earlier under post-pulse reverse bias. The spikes and tails are in agreement with a revised model of recombination of correlated charge pairs (CCPs) and initially unpaired charges. Decreased post-pulse field-induced dissociative quenching of singlet excitons and CCPs, and possibly increased post-pulse current of holes that 'turn back' toward the recombination zone after having drifted beyond it are suspected to cause the spikes amplitude, which exceeds the dc EL.

  5. Integrated fuses for OLED lighting device

    DOEpatents

    Pschenitzka, Florian

    2007-07-10

    An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

  6. A point acoustic device based on aluminum nanowires

    NASA Astrophysics Data System (ADS)

    Xie, Qian-Yi; Ju, Zhen-Yi; Tian, He; Xue, Qing-Tang; Chen, Yuan-Quan; Tao, Lu-Qi; Mohammad, Mohammad Ali; Zhang, Xue-Yue; Yang, Yi; Ren, Tian-Ling

    2016-03-01

    A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 kHz to 20 kHz with a less than +/-3 dB fluctuation. The highest normalized Sound Pressure Level (SPL) of the point contact structure acoustic device is 18 dB higher than the suspended aluminum wire acoustic device. Comparisons between the PCS acoustic device and the Suspended Aluminum Nanowire (SAN) acoustic device illustrate that the PCS acoustic device has a flatter power spectrum within the 20 kHz range, and enhances the SPL at a lower frequency. Enhancing the response at lower frequencies is extremely useful, which may enable earphone and loudspeaker applications within the frequency range of the human ear with the help of pulse density modulation.A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 k

  7. Switchable Solar Window Devices Based on Polymer Dispersed Liquid Crystals

    NASA Astrophysics Data System (ADS)

    Murray, Joseph; Ma, Dakang; Munday, Jeremy

    Windows are an interesting target for photovoltaics due to the potential for large area of deployment and because glass is already a ubiquitous component of solar cell devices. Many demonstrations of solar windows in recent years have used photovoltaic devices which are semitransparent in the visible region. Much research has focused on enhancing device absorption in the UV and IR ranges as a means to circumvent the basic tradeoff between efficiency and transparency to visible light. Use of switchable solar window is a less investigated alternative approach; these windows utilize the visible spectrum but can toggle between high transparency and high efficiency as needed. We present a novel switchable solar window device based on Polymer Dispersed Liquid Crystals (PDLC). By applying an electric field to the PDLC layer, the device can be switched from an opaque, light diffusing, efficient photovoltaic cell to a clear, transparent window. In the off state (i.e. scattering state), these devices have the added benefits of increased reflectivity for reduced lighting and cooling costs and haze for privacy. Further, we demonstrate that these windows have the potential for self-powering due to the very low power required to maintain the on, or high transparency, state. Support From: University of Maryland and Maryland Nano-center and its Fablab.

  8. Fixed Junction Photovoltaic Devices Based On Polymerizable Ionic Liquids

    NASA Astrophysics Data System (ADS)

    Limanek, Austin; Leger, Janelle, , Dr.

    Recently, polymer-based photovoltaic devices (PPVs) have received significant attention as a possible affordable, large area and flexible solar energy technology. In particular, research on chemically fixed p-i-n junctions in polymer photovoltaic devices has shown promising results. These devices are composed of ionic monomers in a polymer matrix sandwiched between two electrodes. When a potential is applied, the ionic monomers migrate towards their corresponding electrodes, enabling electrochemical doping of the polymer. This leads to the formation of bonds between the polymer and ionic monomers, resulting in the formation of a chemically fixed p-i-n junction. However, early devices suffered from long charging times and low overall response. This has been attributed to the low phase compatibility between the ionic monomers and the polymer. It has been shown for light-emitting electrochemical cells, replacing the ionic monomers with polymerizable ionic liquids (PILs) mitigates these challenges. We will present the use of PILs as the dopant in fixed junction PPV devices. Preliminary devices demonstrate significantly improved performance, decreased charging times, and high open circuit voltages. This research supported by the National Science Foundation DMR-1057209.

  9. USB-based controller for generic MEM device deformable mirrors

    NASA Astrophysics Data System (ADS)

    Andrews, Jonathan; Teare, Scott; Wilcox, Christopher; Restaino, Sergio; Martinez, Ty; Payne, Don

    2006-01-01

    The use of Micro-Electro-Machined (MEM) devices as deformable mirrors (DM) for active and adaptive optics is increasing dramatically. Such increases are due to both the cost and simplicity of use of these devices. Our experience with MEM DMs has been positive, however the controlling protocols of these devices presents some issues. Based on our experience and needs we decided to design a generic controller based on a fast communication protocol. These requirements have pushed us to design a system around a USB 2.0 protocol. In this paper we present our architectural design for such controller. We present also experimental data and analysis on the performance of the controller. We describe the pros and cons of such approach versus other techniques. We will address how general such architecture is and how portable is to other systems.

  10. Micro Electromechanical Systems (MEMS) Based Microfluidic Devices for Biomedical Applications

    PubMed Central

    Ashraf, Muhammad Waseem; Tayyaba, Shahzadi; Afzulpurkar, Nitin

    2011-01-01

    Micro Electromechanical Systems (MEMS) based microfluidic devices have gained popularity in biomedicine field over the last few years. In this paper, a comprehensive overview of microfluidic devices such as micropumps and microneedles has been presented for biomedical applications. The aim of this paper is to present the major features and issues related to micropumps and microneedles, e.g., working principles, actuation methods, fabrication techniques, construction, performance parameters, failure analysis, testing, safety issues, applications, commercialization issues and future prospects. Based on the actuation mechanisms, the micropumps are classified into two main types, i.e., mechanical and non-mechanical micropumps. Microneedles can be categorized according to their structure, fabrication process, material, overall shape, tip shape, size, array density and application. The presented literature review on micropumps and microneedles will provide comprehensive information for researchers working on design and development of microfluidic devices for biomedical applications. PMID:21747700

  11. Game theory-based mode cooperative selection mechanism for device-to-device visible light communication

    NASA Astrophysics Data System (ADS)

    Liu, Yuxin; Huang, Zhitong; Li, Wei; Ji, Yuefeng

    2016-03-01

    Various patterns of device-to-device (D2D) communication, from Bluetooth to Wi-Fi Direct, are emerging due to the increasing requirements of information sharing between mobile terminals. This paper presents an innovative pattern named device-to-device visible light communication (D2D-VLC) to alleviate the growing traffic problem. However, the occlusion problem is a difficulty in D2D-VLC. This paper proposes a game theory-based solution in which the best-response dynamics and best-response strategies are used to realize a mode-cooperative selection mechanism. This mechanism uses system capacity as the utility function to optimize system performance and selects the optimal communication mode for each active user from three candidate modes. Moreover, the simulation and experimental results show that the mechanism can attain a significant improvement in terms of effectiveness and energy saving compared with the cases where the users communicate via only the fixed transceivers (light-emitting diode and photo diode) or via only D2D.

  12. Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films

    NASA Astrophysics Data System (ADS)

    Dimitrova, V. I.; Van Patten, P. G.; Richardson, H.; Kordesch, M. E.

    2001-05-01

    Green cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) have been obtained from Er-doped amorphous AlN thin films, 200 nm thick, prepared by rf magnetron sputtering. All films were activated by annealing at 750°C for 10 min in a nitrogen atmosphere. Three sharp bands at about 479, 538 and 559 nm corresponding to the 4F7/2→ 4I15/2, 2H11/2→ 4I15/2 and 4S3/2→ 4I15/2 transitions are observed. Fine structure is seen on the major transitions that does not change with temperature indicating that this structure is related to different local environments of the Er 3+ ion. The PL spectrum revealed sharp peaks from Er 3+ ions and a broad spectral profile that might be from defect states in the amorphous AlN. The results from EL measurements show that Er-doped amorphous AlN films can be used as a phosphor layer in alternating-current thin-film electroluminescent (ACTFEL) devices.

  13. Device-independent bit commitment based on the CHSH inequality

    NASA Astrophysics Data System (ADS)

    Aharon, N.; Massar, S.; Pironio, S.; Silman, J.

    2016-02-01

    Bit commitment and coin flipping occupy a unique place in the device-independent landscape, as the only device-independent protocols thus far suggested for these tasks are reliant on tripartite GHZ correlations. Indeed, we know of no other bipartite tasks, which admit a device-independent formulation, but which are not known to be implementable using only bipartite nonlocality. Another interesting feature of these protocols is that the pseudo-telepathic nature of GHZ correlations—in contrast to the generally statistical character of nonlocal correlations, such as those arising in the violation of the CHSH inequality—is essential to their formulation and analysis. In this work, we present a device-independent bit commitment protocol based on CHSH testing, which achieves the same security as the optimal GHZ-based protocol, albeit at the price of fixing the time at which Alice reveals her commitment. The protocol is analyzed in the most general settings, where the devices are used repeatedly and may have long-term quantum memory. We also recast the protocol in a post-quantum setting where both honest and dishonest parties are restricted only by the impossibility of signaling, and find that overall the supra-quantum structure allows for greater security.

  14. Mini array of quantum Hall devices based on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-05-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10-7) limited by the used resistance bridge.

  15. Field-Based Experiential Learning Using Mobile Devices

    NASA Astrophysics Data System (ADS)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  16. Encapsulation methods for organic electrical devices

    DOEpatents

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  17. Electrolytic actuators: alternative, high-performance, material-based devices.

    PubMed

    Cameron, Colin G; Freund, Michael S

    2002-06-11

    The emerging field of materials-based actuation continues to be the focus of considerable research because of its inherent scalability and its promise to drive micromechanical devices that cannot be realized with conventional mechanical actuator strategies. The electrolytic phase transformation actuator offers a new broad-spectrum solution to the problem of direct conversion of electrical to mechanical energy. Strains of 136,000% and unoptimized work cycle efficiencies near 50% are demonstrated in a prototype device. Conceivably capable of generating stress beyond 200 MPa, this new approach promises performance orders of magnitude beyond other novel actuation strategies.

  18. Electrolytic actuators: Alternative, high-performance, material-based devices

    PubMed Central

    Cameron, Colin G.; Freund, Michael S.

    2002-01-01

    The emerging field of materials-based actuation continues to be the focus of considerable research because of its inherent scalability and its promise to drive micromechanical devices that cannot be realized with conventional mechanical actuator strategies. The electrolytic phase transformation actuator offers a new broad-spectrum solution to the problem of direct conversion of electrical to mechanical energy. Strains of 136,000% and unoptimized work cycle efficiencies near 50% are demonstrated in a prototype device. Conceivably capable of generating stress beyond 200 MPa, this new approach promises performance orders of magnitude beyond other novel actuation strategies. PMID:12060728

  19. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  20. A novel LED-based device for occlusal caries detection.

    PubMed

    Aktan, Ali Murat; Cebe, Mehmet Ata; Ciftçi, Mehmet Ertuğrul; Sirin Karaarslan, Emine

    2012-11-01

    The aim of this in-vitro study was to compare the performance of laser-based (DIAGNOdent, KaVo, Biberach, Germany) and LED-based (Midwest Caries I.D., DENTSPLY Professional, New York, USA) caries detectors in the detection of occlusal caries in permanent molars. The study consisted of 129 visually sound or non-cavitated pits or fissures in 82 extracted permanent human molar teeth. Two trained examiners used the laser-based and LED-based caries detectors to examine the fissures for caries. The teeth were then sectioned at the surfaces suspected of containing occlusal caries and histologically evaluated using stereomicroscopy as a gold standard. Inter-examiner reliability of the caries detector examination was assessed using Cohen's Kappa statistics. The sensitivity, specificity, and accuracy in diagnosing occlusal caries using the two devices were calculated according to appropriate cut-off scores. Receiver operating characteristic (ROC) curves were also determined to compare the diagnostic performance of the devices in occlusal caries diagnosis. The cut-off level of significance was taken as p = 0.005. Cohen's Kappa showed substantial agreement for the laser-based caries detector (0.74), and almost perfect agreement for the LED-based (0.89) caries detector. The specificity of the laser-based device varied from 0.49 to 0.97 at T1 and T2. Its sensitivity varied from 0.33 to 0.65 at T1 and T2. The specificity of the LED-based device varied from 0.48 to 0.56 at T1 and T2. Its sensitivity varied from 0.65 to 0.84 at T1 and from 0.80 to 0.84 at T2. Taking the limitations of the current study into consideration, the DIAGNOdent laser pen was more accurate in determining when teeth were free of occlusal caries than was the Midwest Caries I.D. LED-based device, although the Midwest Caries I.D. device more often revealed the presence of occlusal caries than did the DIAGNOdent pen.

  1. Field effect type devices based on highly doped conducting polymer

    NASA Astrophysics Data System (ADS)

    Waldmann, O.; Park, J. H.; Hsu, F. C.; Chiou, N. R.; Kim, Y. R.; Epstein, A. J.

    2003-03-01

    Field-effect type devices based on the highly doped polymer poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid (PEDOT/PSS) show a reversible change of the source-drain current by several orders of magnitude upon application of appropriate gate voltages. However, the underlying physical mechanism of their operation is little understood so far. A field-effect like operation, dopant ion diffusion, or electrochemical process has been conjectured. In this work, we investigated devices fabricated on glass substrates with polyvinyl phenol and aluminum as dielectric layer and gate, respectively. We applied a saw tooth shaped voltage profile to the gate electrode and a very small source-drain voltage while measuring gate and source-drain currents. These measurements resemble capacitance-voltage measurements used to study the field-effect in inorganic devices as well as cyclic voltammetry used in electrochemical work. Conclusions concerning the operation principle will be discussed. Supported in part by ONR.

  2. Measurement-device-independent entanglement-based quantum key distribution

    NASA Astrophysics Data System (ADS)

    Yang, Xiuqing; Wei, Kejin; Ma, Haiqiang; Sun, Shihai; Liu, Hongwei; Yin, Zhenqiang; Li, Zuohan; Lian, Shibin; Du, Yungang; Wu, Lingan

    2016-05-01

    We present a quantum key distribution protocol in a model in which the legitimate users gather statistics as in the measurement-device-independent entanglement witness to certify the sources and the measurement devices. We show that the task of measurement-device-independent quantum communication can be accomplished based on monogamy of entanglement, and it is fairly loss tolerate including source and detector flaws. We derive a tight bound for collective attacks on the Holevo information between the authorized parties and the eavesdropper. Then with this bound, the final secret key rate with the source flaws can be obtained. The results show that long-distance quantum cryptography over 144 km can be made secure using only standard threshold detectors.

  3. Quantum key distribution based on quantum dimension and independent devices

    NASA Astrophysics Data System (ADS)

    Li, Hong-Wei; Yin, Zhen-Qiang; Chen, Wei; Wang, Shuang; Guo, Guang-Can; Han, Zheng-Fu

    2014-03-01

    In this paper, we propose a quantum key distribution (QKD) protocol based on only a two-dimensional Hilbert space encoding a quantum system and independent devices between the equipment for state preparation and measurement. Our protocol is inspired by the fully device-independent quantum key distribution (FDI-QKD) protocol and the measurement-device-independent quantum key distribution (MDI-QKD) protocol. Our protocol only requires the state to be prepared in the two-dimensional Hilbert space, which weakens the state preparation assumption in the original MDI-QKD protocol. More interestingly, our protocol can overcome the detection loophole problem in the FDI-QKD protocol, which greatly limits the application of FDI-QKD. Hence our protocol can be implemented with practical optical components.

  4. New memory devices based on the proton transfer process.

    PubMed

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge-saturated with oxygen or the hydroxy group-and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. PMID:26596910

  5. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  6. New memory devices based on the proton transfer process

    NASA Astrophysics Data System (ADS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  7. Paper-based inkjet-printed microfluidic analytical devices.

    PubMed

    Yamada, Kentaro; Henares, Terence G; Suzuki, Koji; Citterio, Daniel

    2015-04-27

    Rapid, precise, and reproducible deposition of a broad variety of functional materials, including analytical assay reagents and biomolecules, has made inkjet printing an effective tool for the fabrication of microanalytical devices. A ubiquitous office device as simple as a standard desktop printer with its multiple ink cartridges can be used for this purpose. This Review discusses the combination of inkjet printing technology with paper as a printing substrate for the fabrication of microfluidic paper-based analytical devices (μPADs), which have developed into a fast-growing new field in analytical chemistry. After introducing the fundamentals of μPADs and inkjet printing, it touches on topics such as the microfluidic patterning of paper, tailored arrangement of materials, and functionalities achievable exclusively by the inkjet deposition of analytical assay components, before concluding with an outlook on future perspectives.

  8. An implantable thermoresponsive drug delivery system based on Peltier device.

    PubMed

    Yang, Rongbing; Gorelov, Alexander V; Aldabbagh, Fawaz; Carroll, William M; Rochev, Yury

    2013-04-15

    Locally dropping the temperature in vivo is the main obstacle to the clinical use of a thermoresponsive drug delivery system. In this paper, a Peltier electronic element is incorporated with a thermoresponsive thin film based drug delivery system to form a new drug delivery device which can regulate the release of rhodamine B in a water environment at 37 °C. Various current signals are used to control the temperature of the cold side of the Peltier device and the volume of water on top of the Peltier device affects the change in temperature. The pulsatile on-demand release profile of the model drug is obtained by turning the current signal on and off. The work has shown that the 2600 mAh power source is enough to power this device for 1.3 h. Furthermore, the excessive heat will not cause thermal damage in the body as it will be dissipated by the thermoregulation of the human body. Therefore, this simple novel device can be implanted and should work well in vivo.

  9. Small Dosimeter based on Timepix device for International Space Station

    NASA Astrophysics Data System (ADS)

    Turecek, D.; Pinsky, L.; Jakubek, J.; Vykydal, Z.; Stoffle, N.; Pospisil, S.

    2011-12-01

    The radiation environment in space is different, more complex and more intense than on Earth. Conventional devices and detection methods used nowadays do not allow to discriminate single particle types and the energy of the single particles. The Timepix detector is a position sensitive pixelated detector developed at CERN in a frame of the Medipix collaboration that provides capability to visualize tracks and measure energy of single particles. This information can be used for sorting the particles into different categories. It is possible to distinguish light charged particles such as electrons or heavy charged particles such as ions. Moreover, the Linear Energy Transfer (LET) for charged particles can be determined. Each category is assigned a quality factor corresponding to the energy a particle would deposit in the human tissue. By summing the dose of all particles an estimate of the dose rate can be calculated. For space dosimetry purposes a miniature device with the Timepix detector and a custom made integrated USB based readout interface has been constructed. The entire device has dimensions of a USB flash memory stick. The whole compact device is connected to a control PC and is operated continuously. The PC runs a software that controls data acquisition, adjusts the acquisition time adaptively according to the particle rate, analyzes the particle tracks, evaluates the deposited energy and the LET and visualizes in a simple display the estimated dose rate. The performance of the device will be tested during a mission on International Space Station planned towards the beginning of year 2012.

  10. Optical sensor array platform based on polymer electronic devices

    NASA Astrophysics Data System (ADS)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  11. Stability of spintronic devices based on quantum ring networks

    NASA Astrophysics Data System (ADS)

    Földi, Péter; Kálmán, Orsolya; Peeters, F. M.

    2009-09-01

    Transport properties in mesoscopic networks are investigated, where the strength of the (Rashba-type) spin-orbit coupling is tuned with external gate voltages. We analyze in detail to what extent the ideal behavior and functionality of some promising network-based devices are modified by random (spin-dependent) scattering events and by thermal fluctuations. It is found that although the functionality of these devices is obviously based on the quantum coherence of the transmitted electrons, there is a certain stability: moderate level of errors can be tolerated. For mesoscopic networks made of typical semiconductor materials, we found that when the energy distribution of the input carriers is narrow enough, the devices can operate close to their ideal limits even at relatively high temperature. As an example, we present results for two different networks: one that realizes a Stern-Gerlach device and another that simulates a spin quantum walker. Finally we propose a simple network that can act as a narrow band energy filter even in the presence of random scatterers.

  12. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    PubMed Central

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  13. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  14. Novel device-based interventional strategies for advanced heart failure.

    PubMed

    Toth, Gabor G; Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  15. The use of silk-based devices for fracture fixation

    NASA Astrophysics Data System (ADS)

    Perrone, Gabriel S.; Leisk, Gary G.; Lo, Tim J.; Moreau, Jodie E.; Haas, Dylan S.; Papenburg, Bernke J.; Golden, Ethan B.; Partlow, Benjamin P.; Fox, Sharon E.; Ibrahim, Ahmed M. S.; Lin, Samuel J.; Kaplan, David L.

    2014-03-01

    Metallic fixation systems are currently the gold standard for fracture fixation but have problems including stress shielding, palpability and temperature sensitivity. Recently, resorbable systems have gained interest because they avoid removal and may improve bone remodelling due to the lack of stress shielding. However, their use is limited to paediatric craniofacial procedures mainly due to the laborious implantation requirements. Here we prepare and characterize a new family of resorbable screws prepared from silk fibroin for craniofacial fracture repair. In vivo assessment in rat femurs shows the screws to be self-tapping, remain fixed in the bone for 4 and 8 weeks, exhibit biocompatibility and promote bone remodelling. The silk-based devices compare favourably with current poly-lactic-co-glycolic acid fixation systems, however, silk-based devices offer numerous advantages including ease of implantation, conformal fit to the repair site, sterilization by autoclaving and minimal inflammatory response.

  16. Chemically modified graphene based supercapacitors for flexible and miniature devices

    NASA Astrophysics Data System (ADS)

    Ghosh, Debasis; Kim, Sang Ouk

    2015-09-01

    Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

  17. Solid-state memcapacitive device based on memristive switch

    NASA Astrophysics Data System (ADS)

    Flak, J.; Lehtonen, E.; Laiho, M.; Rantala, A.; Prunnila, M.; Haatainen, T.

    2014-10-01

    This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5 μ M× 5 μ M has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh (\\cdot )-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

  18. Polarization effects in nitride and ferroelectric based devices

    NASA Astrophysics Data System (ADS)

    Singh, Madhusudan

    This dissertation addresses the application of theoretical and computational methods to examine heterostructure devices based on planar semiconductors. The thesis pursues III-V nitrides and ferroelectrics like LiNbO3 and BaxSr1-xTiO 3. GaN and other nitrides exhibit a large polarization charge arising from the built in polarization revealed in the [1000] growth direction, and are also wide band-gap materials (with the exception of InN). The nitrides are important for high-power/high-temperature electronics and for short wavelength light emitters. Our studies address important issues in large bandgap junctions, transistors and light emitters. One of the salient results of our studies has been the first calculations of tunnel current in polar junctions and the potential of using built in polar charge at interface to design junctions. We find that novel junctions cam be designed to produce tailorable I-V characteristics. Our studies have led to experimental realization of such tailorable junctions. We also present results on charge control in ferroelectric-nitride structures where post growth junction tailoring can be carried out (using poling) to create functional devices. This leads to a new class of devices such as switches. We have developed extensive charge control, Monte Carlo based transport models and device simulation techniques to examine nitride based transistors. These studies allow us to examine mobility, transit time, high frequency behavior, noise, transconductance, etc. We have examined device non-linearity issues, scaling issues, temperature dependence, noise sources, and device design optimization issues. Our results are closely coupled to experimental results. Role of unusual velocity-field relations, self-heating and non-equilibrium phonons is examined. III-V nitride based light emitters often exhibit a very high radiative efficiency, higher than the presence of dislocations in the system suggests. Calculations indicate however, that local disorder

  19. Paper-based diagnostic devices for clinical paraquat poisoning diagnosis.

    PubMed

    Kuan, Chen-Meng; Lin, Szu-Ting; Yen, Tzung-Hai; Wang, Yu-Lin; Cheng, Chao-Min

    2016-05-01

    This article unveils the development of a paper-based analytical device designed to rapidly detect and clinically diagnose paraquat (PQ) poisoning. Using wax printing technology, we fabricated a PQ detection device by pattering hydrophobic boundaries on paper. This PQ detection device employs a colorimetric sodium dithionite assay or an ascorbic acid assay to indicate the PQ level in a buffer system or in a human serum system in 10 min. In this test, colorimetric changes, blue in color, were observable with the naked eye. By curve fitting models of sodium dithionite and ascorbic acid assays in normal human serum, we evaluated serum PQ levels for five PQ-poisoned patients before hemoperfusion (HP) treatment and one PQ-poisoned patient after HP treatment. As evidenced by similar detection outcomes, the analytical performance of our device can compete with that of the highest clinical standard, i.e., spectrophotometry, with less complicated sample preparation and with more rapid results. Accordingly, we believe that our rapid PQ detection can benefit physicians determining timely treatment strategies for PQ-poisoned patients once they are taken to hospitals, and that this approach will increase survival rates. PMID:27462379

  20. Simulation of devices based on carbon nanotubes and graphene

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Labunov, V. A.; Kolomejtseva, N. V.; Romanova, I. A.

    2014-12-01

    The simulation results of different devices based on carbon nanotubes (CNT) and graphene are described in the paper. The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on CNT of different types (chirality) was realized with the use of the developed model. The technique of express simulation of nanoradio based on CNT of the type I (based on only single CNT) and of the type II (hybrid radio) is developed. Proposed models can be used for calculation of nanoradio characteristics such as: 1) resonant frequency of CNT; 2) oscillation amplitude of CNT; 3) CNT IV-characteristics depending on different factors. Results of device simulation based on single-wall and multi-wall CNT are given in the paper. IV-characteristics of nanoscale resonant tunneling structure based on graphene-on-SiC were calculated. As well as it was investigated the influence of different parameters on the electrical characteristic of graphene-based nanostructures.

  1. Strain-Engineering of Graphene Based Topological Quantum Devices

    NASA Astrophysics Data System (ADS)

    Diniz, Ginetom S.; Guassi, Marcos R.; Qu, Fanyao

    2015-03-01

    We have investigated the spin-charge transport in quantum devices based on graphene nanoribbons (GNR). Our calculation is based on the surface Green's function technique, considering the presence of an uniform uniaxial strain, spin-orbit interactions (SOIs), exchange field and a smooth staggered potential. We propose the use of uniaxial strain as an efficient mechanism to tune the conductance profiles of GNR with different edge terminations. Our results show that distinct behaviors can be achieved: for armchair GNR there is a complete suppression of the conductance close to the Fermi level with the formation of a band gap that depends on the direction and strength of the strain deformation, while for zigzag GNR there is only a small conductance suppression. We also discuss the effects of SOIs and the appearance of spin-resolved conductance oscillations, and the local density of states of these GNR devices in the quantum anomalous Hall regime. Furthermore, we demonstrate that the local density of states show that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be probed by scanning tunneling microscope. Our findings can be potentially used in novel GNR based topological quantum devices. Supported by FAP-DF, CNPq and CAPES.

  2. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    SciTech Connect

    Tregnago, G.; Fléchon, C.; Cacialli, F. E-mail: f.cacialli@ucl.ac.uk; Choudhary, S.; Gozalvez, C.

    2014-10-06

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  3. Ultraviolet Electroluminescence and Blue-Green Phosphorescence using an Organic Diphosphine Oxide Charge Transporting Layer.

    SciTech Connect

    Burrows, Paul E.; Padmaperuma, Asanga B.; Sapochak, Linda S.; Djurovich, Peter I.; Thompson, Mark E.

    2006-05-01

    We report electroluminescence with a peak wavelength at 338 nm from a simple bilayer organic light emitting device (OLED) made using 4,4’-bis(diphenylphosphine oxide) biphenyl (PO1). In an OLED geometry, the material is preferentially electron transporting. Doping the PO1 layer with iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N, C2’)picolinate (FIrpic) gives rise to electrophosphorescence with a peak external quantum efficiency of 7.8% at 0.09 mA/cm2 and 5.8% at 13 mA/cm2. The latter current density is obtained at 6.3 V applied forward bias. This represents a new class of wide-bandgap charge transporting organic materials which may prove useful as host materials for blue electrophosphoresent OLEDs.

  4. GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength.

    PubMed

    Wang, Cheng-Yin; Chen, Liang-Yi; Chen, Cheng-Pin; Cheng, Yun-Wei; Ke, Min-Yung; Hsieh, Min-Yann; Wu, Han-Ming; Peng, Lung-Han; Huang, JianJang

    2008-07-01

    A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure. PMID:18607469

  5. Electroluminescence from individual air-suspended carbon nanotubes within split-gate structures

    NASA Astrophysics Data System (ADS)

    Higashide, N.; Uda, T.; Yoshida, M.; Ishii, A.; Kato, Y. K.

    Electrically induced light emission from chirality-identified single-walled carbon nanotubes are investigated by utilizing split-gate field-effect devices fabricated on silicon-on-insulator substrates. We begin by etching trenches through the top silicon layer into the buried oxide, and the silicon layer is thermally oxidized for use as local gates. We partially remove the oxide and form gate electrodes, then contacts for nanotubes are deposited on both sides of the trench. Catalyst particles are placed on the contacts, and nanotubes are grown over the trench by chemical vapor deposition. We use photoluminescence microscopy to locate the nanotubes and perform excitation spectroscopy to identify their chirality. Gate-induced photoluminescence quenching is used to confirm carrier doping, and electroluminescence intensity is investigated as a function of the split-gate and bias voltages. Work supported by JSPS (KAKENHI 24340066, 26610080), MEXT (Photon Frontier Network Program, Nanotechnology Platform), Canon Foundation, and Asahi Glass Foundation.

  6. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    SciTech Connect

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D.

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  7. Mineralization of monodispersed CdS nanoparticles on polyelectrolyte superstructure forming an electroluminescent "necklace-of-beads".

    PubMed

    Maheshwari, Vivek; Saraf, Ravi F

    2006-10-10

    We report a nonmicellar method to synthesize monodisperse semiconducting nanoparticles templated on polymer chains dissolved in solution at high yield. The monodispersity is achieved due to the beaded necklace morphology of the polyelectrolyte chains in solution where the beads are nanometer-scale nodules in the polymer chain. The resultant structure is a nanoparticles studded necklace where the particles are imbedded in the beads. Multiple cycles of synthesis on the polymer template yield nanoparticles of identical size, resulting in a nanocomposite with high particle fraction. The resultant nanocomposite has beaded-fibrilar morphology with imbedded nanoparticles and can be solution-casted to make electroluminescent thin film device. PMID:17014094

  8. Electrochemiluminescence detection in microfluidic cloth-based analytical devices.

    PubMed

    Guan, Wenrong; Liu, Min; Zhang, Chunsun

    2016-01-15

    This work describes the first approach at combining microfluidic cloth-based analytical devices (μCADs) with electrochemiluminescence (ECL) detection. Wax screen-printing is employed to make cloth-based microfluidic chambers which are patterned with carbon screen-printed electrodes (SPEs) to create truly disposable, simple, inexpensive sensors which can be read with a low-cost, portable charge coupled device (CCD) imaging sensing system. And, the two most commonly used ECL systems of tris(2,2'-bipyridyl)ruthenium(II)/tri-n-propylamine (Ru(bpy)3(2+)/TPA) and 3-aminophthalhydrazide/hydrogen peroxide (luminol/H2O2) are applied to demonstrate the quantitative ability of the ECL μCADs. In this study, the proposed devices have successfully fulfilled the determination of TPA with a linear range from 2.5 to 2500μM with a detection limit of 1.265μM. In addition, the detection of H2O2 can be performed in the linear range of 0.05-2.0mM, with a detection limit of 0.027mM. It has been shown that the ECL emission on the wax-patterned cloth device has an acceptable sensitivity, stability and reproducibility. Finally, the applicability of cloth-based ECL is demonstrated for determination of glucose in phosphate buffer solution (PBS) and artificial urine (AU) samples, with the detection limits of 0.032mM and 0.038mM, respectively. It can be foreseen, therefore, that μCADs with ECL detection could provide a new sensing platform for point-of-care testing, public health, food safety detection and environmental monitoring in remote regions, developing or developed countries. PMID:26319168

  9. A cloud-based multimodality case file for mobile devices.

    PubMed

    Balkman, Jason D; Loehfelm, Thomas W

    2014-01-01

    Recent improvements in Web and mobile technology, along with the widespread use of handheld devices in radiology education, provide unique opportunities for creating scalable, universally accessible, portable image-rich radiology case files. A cloud database and a Web-based application for radiologic images were developed to create a mobile case file with reasonable usability, download performance, and image quality for teaching purposes. A total of 75 radiology cases related to breast, thoracic, gastrointestinal, musculoskeletal, and neuroimaging subspecialties were included in the database. Breast imaging cases are the focus of this article, as they best demonstrate handheld display capabilities across a wide variety of modalities. This case subset also illustrates methods for adapting radiologic content to cloud platforms and mobile devices. Readers will gain practical knowledge about storage and retrieval of cloud-based imaging data, an awareness of techniques used to adapt scrollable and high-resolution imaging content for the Web, and an appreciation for optimizing images for handheld devices. The evaluation of this software demonstrates the feasibility of adapting images from most imaging modalities to mobile devices, even in cases of full-field digital mammograms, where high resolution is required to represent subtle pathologic features. The cloud platform allows cases to be added and modified in real time by using only a standard Web browser with no application-specific software. Challenges remain in developing efficient ways to generate, modify, and upload radiologic and supplementary teaching content to this cloud-based platform. Online supplemental material is available for this article. PMID:24819664

  10. AC transport in carbon-based devices: challenges and perspectives

    NASA Astrophysics Data System (ADS)

    Foa Torres, L. E. F.; Cuniberti, G.

    2009-05-01

    Time-dependent fields are a valuable tool to control fundamental quantum phenomena in highly coherent low dimensional electron systems. Carbon nanotubes and graphene are a promising ground for these studies. Here we offer a brief overview of driven electronic transport in carbon-based materials with the main focus on carbon nanotubes. Recent results predicting control of the current and noise in nanotube based Fabry-Pérot devices are highlighted. To cite this article: L.E.F. Foa Torres, G. Cuniberti, C. R. Physique 10 (2009).

  11. Electroluminescence at a wavelength of 1.5 {mu}m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

    SciTech Connect

    Kuznetsov, V. P.; Shmagin, V. B.; Marychev, M. O.; Kudryavtsev, K. E.; Kuznetsov, M. V.; Andreev, B. A.; Kornaukhov, A. V.; Gorshkov, O. N.; Krasilnik, Z. F.

    2010-12-15

    Si:Er layers in diode structures were doped with Al, Ga, or B during growth by sublimation molecular-beam epitaxy. As a result, a sharp increase in the electroluminescence intensity at a wavelength of 1.5 {mu}m was observed in diodes with thick bases (as large as 0.8 {mu}m).

  12. Analysis of Android Device-Based Solutions for Fall Detection.

    PubMed

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-07-23

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions.

  13. Enhanced photocoagulation with catheter-based diffusing optical device

    NASA Astrophysics Data System (ADS)

    Kang, Hyun Wook; Kim, Jeehyun; Oh, Jungwhan

    2012-11-01

    A novel balloon catheter-based diffusing optical device was designed and evaluated to assist in treating excessive menstrual bleeding. A synthetic fused-silica fiber was micro-machined precisely to create scattering segments on a 25 mm long fiber tip for uniform light distribution. A visible wavelength (λ=532 nm) was used to specifically target the endometrium due to the high vascularity of the uterine wall. Optical simulation presented 30% wider distribution of photons along with approximately 40% higher irradiance induced by addition of a glass cap to the diffuser tip. Incorporation of the optical diffuser with a polyurethane balloon catheter considerably enhanced coagulation depth and area (i.e., 3.5 mm and 18.9 cm2 at 1 min irradiation) in tissue in vitro. The prototype device demonstrated the coagulation necrosis of 2.8±1.2 mm (n=18) and no thermal damage to myometrium in in vivo caprine models. A prototype 5 cm long balloon catheter-assisted optical diffuser was also evaluated with a cadaveric human uterus to confirm the coagulative response of the uterine tissue as well as to identify the further design improvement and clinical applicability. The proposed catheter-based diffusing optical device can be a feasible therapeutic tool to photocoagulate endometrial cell layers in an efficient and safe manner.

  14. Analysis of Android Device-Based Solutions for Fall Detection

    PubMed Central

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  15. Analysis of Android Device-Based Solutions for Fall Detection.

    PubMed

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  16. Laser-based patterning for fluidic devices in nitrocellulose

    PubMed Central

    Katis, Ioannis N.; Eason, Robert W.; Sones, Collin L.

    2015-01-01

    In this report, we demonstrate a simple and low cost method that can be reproducibly used for fabrication of microfluidic devices in nitrocellulose. The fluidic patterns are created via a laser-based direct-write technique that induces polymerisation of a photo-polymer previously impregnated in the nitrocellulose. The resulting structures form hydrophobic barriers that extend through the thickness of the nitrocellulose and define an interconnected hydrophilic fluidic-flow pattern. Our experimental results show that using this method it is possible to achieve microfluidic channels with lateral dimensions of ∼100 μm using hydrophobic barriers that form the channel walls with dimensions of ∼60 μm; both of these values are considerably smaller than those that can be achieved with other current techniques used in the fabrication of nitrocellulose-based fluidic devices. A simple grid patterned nitrocellulose device was then used for the detection of C-reactive protein via a sandwich enzyme-linked immunosorbent assay, which served as a useful proof-of-principle experiment. PMID:26015836

  17. Analytical Devices Based on Direct Synthesis of DNA on Paper.

    PubMed

    Glavan, Ana C; Niu, Jia; Chen, Zhen; Güder, Firat; Cheng, Chao-Min; Liu, David; Whitesides, George M

    2016-01-01

    This paper addresses a growing need in clinical diagnostics for parallel, multiplex analysis of biomarkers from small biological samples. It describes a new procedure for assembling arrays of ssDNA and proteins on paper. This method starts with the synthesis of DNA oligonucleotides covalently linked to paper and proceeds to assemble microzones of DNA-conjugated paper into arrays capable of simultaneously capturing DNA, DNA-conjugated protein antigens, and DNA-conjugated antibodies. The synthesis of ssDNA oligonucleotides on paper is convenient and effective with 32% of the oligonucleotides cleaved and eluted from the paper substrate being full-length by HPLC for a 32-mer. These ssDNA arrays can be used to detect fluorophore-linked DNA oligonucleotides in solution, and as the basis for DNA-directed assembly of arrays of DNA-conjugated capture antibodies on paper, detect protein antigens by sandwich ELISAs. Paper-anchored ssDNA arrays with different sequences can be used to assemble paper-based devices capable of detecting DNA and antibodies in the same device and enable simple microfluidic paper-based devices.

  18. Photonic devices based on black phosphorus and related hybrid materials

    NASA Astrophysics Data System (ADS)

    Vitiello, M. S.; Viti, L.

    2016-08-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus-based THz photonics and discuss future perspectives of this rapidly developing research field.

  19. Microcomputer-based Acceleration Sensor Device for Swimming Stroke Monitoring

    NASA Astrophysics Data System (ADS)

    Ohgi, Yuji; Ichikawa, Hiroshi; Miyaji, Chikara

    The purpose of this study was to develop a microcomputer-based acceleration logger device for the swimming stroke monitoring. The authors measured the swimmer's tri-axial wrist acceleration and applied this device for the fatigue evaluation of the swimmers. The experimental protocol led the swimmers exhausted after the crawl stroke interval training. Every single stroke was determined by the impact acceleration peak, which appeared on the x and z-axis acceleration. The change of the underwater stroke phases was identified by the characteristics of the acceleration peaks. In their exhaustion, the y-axis acceleration, which was longitudinal forearm acceleration decreased at the beginning of the upsweep phase. At that time, the swimmer could not extend his elbow joint. Since the developed acceleration data logger could provide us the information about the underwater stroke phases and it would be a helpful tool in the swimming training.

  20. Gold-based electrical interconnections for microelectronic devices

    DOEpatents

    Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

    2002-01-01

    A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

  1. SEMICONDUCTOR DEVICES: A new SOI high voltage device based on E-SIMOX substrate

    NASA Astrophysics Data System (ADS)

    Lijuan, Wu; Shengdong, Hu; Bo, Zhang; Zhaoji, Li

    2010-04-01

    A new NI (n+ charge islands) high voltage device structure based on E-SIMOX (epitaxy-the separation by implantation of oxygen) substrate is proposed. It is characterized by equidistant high concentration n+-regions on the top interface of the dielectric buried layer. Inversion holes caused by the vertical electric field (EV) are located in the spacing of two neighboring n+-regions on the interface by the force from lateral electric field (EL) and the compositive operation of Coulomb's forces with the ionized donors in the undepleted n+-regions. This effectively enhances the electric field of dielectric buried layer (EI) and increases breakdown voltage (VB). An analytical model of the vertical interface electric field for the NI SOI is presented, and the analytical results are in good agreement with the 2D simulative results. EI = 568 V/μm and VB = 230 V of NI SOI are obtained by 2D simulation on a 0.375-μm-thick dielectric layer and 2-μm-thick top silicon layer. The device can be manufactured by using the standard CMOS process with addition of a mask for implanting arsenic to form NI. 2-μm silicon layer can be achieved by using epitaxy SIMOX technology (E-SIMOX).

  2. An electromagnetic inerter-based vibration suppression device

    NASA Astrophysics Data System (ADS)

    Gonzalez-Buelga, A.; Clare, L. R.; Neild, S. A.; Jiang, J. Z.; Inman, D. J.

    2015-05-01

    This paper describes how an inerter-based device for structural vibration suppression can be realized using an electromagnetic transducer such as a linear motor. When the motor shaft moves, a difference of voltage is generated across the transducer coil. The voltage difference is proportional to the relative velocity between its two terminals. The electromagnetic transducer will exert a force proportional to current following the Lorentz principle if the circuit is closed around the transducer coil. If an electronic circuit consisting of a capacitor, an inductance and a resistance with the appropriate configuration is connected, the resulting force reflected back into the mechanical domain is equivalent to that achieved by a mechanical inerter-based device. The proposed configuration is easy to implement and very versatile, provided a high quality conversion system with negligible losses. With the use of electromagnetic devices, a new generation of vibration absorbers can be realized, for example in the electrical domain it would be relatively uncomplicated to synthesize multi-frequency or real time tunable vibration absorbers by adding electrical components in parallel. In addition by using resistance emulators in the electrical circuits, part of the absorbed vibration energy can be converted into usable power. Here an electromagnetic tuned inerter damper (E-TID) is tested experimentally using real time dynamic substructuring. A voltage compensation unit was developed in order to compensate for coil losses. This voltage compensation unit requires power, which is acquired through harvesting from the vibration energy using a resistance emulator. A power balance analysis was developed in order to ensure the device can be self sufficient. Promising experimental results, using this approach, have been obtained and are presented in this paper. The ultimate goal of this research is the development of autonomous electromagnetic vibration absorbers, able to harvest energy

  3. Direct observation of bubble-assisted electroluminescence in liquid xenon

    NASA Astrophysics Data System (ADS)

    Erdal, E.; Arazi, L.; Chepel, V.; Rappaport, M. L.; Vartsky, D.; Breskin, A.

    2015-11-01

    Bubble formation in liquid xenon underneath a Thick Gaseous Electron Multiplier (THGEM) electrode immersed in liquid xenon was observed with a CCD camera. With voltage across the THGEM, the appearance of bubbles was correlated with that of electroluminescence signals induced by ionization electrons from alpha-particle tracks. This confirms recent indirect evidence that the observed photons are due to electroluminescence within a xenon vapor layer trapped under the electrode. The bubbles seem to emerge spontaneously due to heat flow from 300 K into the liquid, or in a controlled manner by locally boiling the liquid with resistive wires. Controlled bubble formation resulted in energy resolution of σ/E ≈ 7.5% for ~ 6000 ionization electrons. The phenomenon could pave ways towards the conception of large-volume `local dual-phase' noble-liquid TPCs.

  4. Influence of hole transporter doping on electroluminescent property of novel fluorene molecular material

    NASA Astrophysics Data System (ADS)

    Qian, Jincheng; Yu, Junsheng; Lou, Shuangling; Jiang, Yadong; Zhang, Qing

    2009-05-01

    The luminescent characteristics of a novel small molecule fluorene material, 6,6'-(9H-fluoren-9,9-diyl)bis(2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ) for organic light-emitting diode are systemically investigated, especially focusing on the effect of hole transporter doping concentration. Double-layer devices with a structure of indium tin oxide (ITO)/emissive layer (EML)/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline (BCP)/Mg:Ag are fabricated by spin-coating method, where EML is BFLBBFLYQ and blend of BFLBBFLYQ: N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), respectively. The results show that the performance of the device is improved two magnitudes by doping BFLBBFLYQ with TPD. In the electroluminescent (EL) spectra, the BFLBBFLYQ device show a blue light emission peaking at 485 nm, and the blend device exhibits a broad banded emission with 45 nm red-shifted peaking at 530 nm in green light area. The photoluminescent (PL) spectra of BFLBBFLYQ, TPD and BFLBBFLYQ: TPD blend in xylene solution and spin-coated film is also studied, yielding an evidence that exciplex maybe plays the role for low energy emission.

  5. MEMS- and NEMS-based smart devices and systems

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.

    2001-11-01

    structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

  6. TOPICAL REVIEW: Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Willander, M.; Nur, O.; Zhao, Q. X.; Yang, L. L.; Lorenz, M.; Cao, B. Q.; Zúñiga Pérez, J.; Czekalla, C.; Zimmermann, G.; Grundmann, M.; Bakin, A.; Behrends, A.; Al-Suleiman, M.; El-Shaer, A.; Che Mofor, A.; Postels, B.; Waag, A.; Boukos, N.; Travlos, A.; Kwack, H. S.; Guinard, J.; LeSi Dang, D.

    2009-08-01

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  7. A microfluidic device based on an evaporation-driven micropump.

    PubMed

    Nie, Chuan; Frijns, Arjan J H; Mandamparambil, Rajesh; den Toonder, Jaap M J

    2015-04-01

    In this paper we introduce a microfluidic device ultimately to be applied as a wearable sweat sensor. We show proof-of-principle of the microfluidic functions of the device, namely fluid collection and continuous fluid flow pumping. A filter-paper based layer, that eventually will form the interface between the device and the skin, is used to collect the fluid (e.g., sweat) and enter this into the microfluidic device. A controllable evaporation driven pump is used to drive a continuous fluid flow through a microfluidic channel and over a sensing area. The key element of the pump is a micro-porous membrane mounted at the channel outlet, such that a pore array with a regular hexagonal arrangement is realized through which the fluid evaporates, which drives the flow within the channel. The system is completely fabricated on flexible polyethylene terephthalate (PET) foils, which can be the backbone material for flexible electronics applications, such that it is compatible with volume production approaches like Roll-to-Roll technology. The evaporation rate can be controlled by varying the outlet geometry and the temperature. The generated flows are analyzed experimentally using Particle Tracking Velocimetry (PTV). Typical results show that with 1 to 61 pores (diameter = 250 μm, pitch = 500 μm) flow rates of 7.3 × 10(-3) to 1.2 × 10(-1) μL/min are achieved. When the surface temperature is increased by 9.4°C, the flow rate is increased by 130 %. The results are theoretically analyzed using an evaporation model that includes an evaporation correction factor. The theoretical and experimental results are in good agreement.

  8. Photopolymer-based three-dimensional optical waveguide devices

    NASA Astrophysics Data System (ADS)

    Kagami, M.; Yamashita, T.; Yonemura, M.; Kawasaki, A.; Watanabe, O.; Tomiki, M.

    2012-02-01

    Photopolymer based three-dimensional (3D) waveguide devices are very attractive in low-cost optical system integration. Especially, Light-Induced Self-Written (LISW) technology is suitable for this application, and the technology enables low-loss 3D optical circuitry formation from an optical fiber tip which soaked in photopolymer solution by employing its photo-polymerization due to own irradiation from the fiber tip. This technology is expected drastic mounting cost reduction in fields of micro-optic and hybrid integration devices assembly. The principle of the LISW optical waveguides is self-trapping effect of the irradiation flux into the self-organized waveguide, where, used wavelength can be chosen to fit photopolymer's reactivity from visible to infrared. Furthermore, this effect also makes possible grating formation and "optical solder" interconnection. Actually fabricated self-written grating shows well defined deep periodic index contrast and excellent optical property for the wavelength selectivity. And the "optical solder" interconnection realizes a passive optical interconnection between two faceted fibers or devices by the LISW waveguide even if there is a certain amount of gap and a small degree of misalignment exist. The LISW waveguides grow towards each other from both sides to a central point where the opposing beams overlap and are then combined into one waveguide. This distinctive effect is confirmed in all kind optical fibers, such as from a singlemode to 1-mm-corediameter multimode optical fiber. For example of complicated WDM optical transceiver module, mounted a branchedwaveguide and filter elements, effectiveness of LISW technology is outstanding. In assembling and packaging process, neither dicing nor polishing is needed. In this paper, we introduce LISW technology principles and potential application to integrated WDM optical transceiver devices for both of singlemode and multimode system developed in our research group.

  9. Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices

    PubMed Central

    Shen, Richang; Gurkan, Umut A.

    2016-01-01

    Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing. PMID:27512530

  10. Research progress of Si-based germanium materials and devices

    NASA Astrophysics Data System (ADS)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  11. An investigation of paper based microfluidic devices for size based separation and extraction applications.

    PubMed

    Zhong, Z W; Wu, R G; Wang, Z P; Tan, H L

    2015-09-01

    Conventional microfluidic devices are typically complex and expensive. The devices require the use of pneumatic control systems or highly precise pumps to control the flow in the devices. This work investigates an alternative method using paper based microfluidic devices to replace conventional microfluidic devices. Size based separation and extraction experiments conducted were able to separate free dye from a mixed protein and dye solution. Experimental results showed that pure fluorescein isothiocyanate could be separated from a solution of mixed fluorescein isothiocyanate and fluorescein isothiocyanate labeled bovine serum albumin. The analysis readings obtained from a spectrophotometer clearly show that the extracted tartrazine sample did not contain any amount of Blue-BSA, because its absorbance value was 0.000 measured at a wavelength of 590nm, which correlated to Blue-BSA. These demonstrate that paper based microfluidic devices, which are inexpensive and easy to implement, can potentially replace their conventional counterparts by the use of simple geometry designs and the capillary action. These findings will potentially help in future developments of paper based microfluidic devices.

  12. Model Based Bandwidth Scavenging for Device Coexistence in Wireless LANs

    NASA Astrophysics Data System (ADS)

    Plummer, Anthony; Taghizadeh, Mahmoud; Biswas, Subir

    Dynamic Spectrum Access in a Wireless LAN can enable a set of secondary users' devices to access unused spectrum, or whitespace, which is found between the transmissions of a set of primary users' devices. The primary design objectives for an efficient secondary user access strategy are to be able to "scavenge" spatio-temporally fragmented bandwidth while limiting the amount of interference caused to the primary users. In this paper, we propose a secondary user access strategy which is based on measurement and modeling of the whitespace as perceived by the secondary users in a WLAN. A secondary user continually monitors and models its surrounding whitespace, and then attempts to access the available spectrum so that the effective secondary throughput is maximized while the resulting interference to the primary users is limited to a pre-defined bound. We first develop analytical expressions for the secondary throughput and primary interference, and then perform ns2 based simulation experiments to validate the effectiveness of the proposed access strategy, and evaluate its performance numerically using the developed expressions.

  13. Nanoscale devices based on plasmonic coaxial waveguide resonators

    NASA Astrophysics Data System (ADS)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  14. Logic-gate devices based on printed polymer semiconducting nanostripes.

    PubMed

    Gentili, Denis; Sonar, Prashant; Liscio, Fabiola; Cramer, Tobias; Ferlauto, Laura; Leonardi, Francesca; Milita, Silvia; Dodabalapur, Ananth; Cavallini, Massimiliano

    2013-08-14

    The applications of organic semiconductors in complex circuitry such as printed CMOS-like logic circuits demand miniaturization of the active structures to the submicrometric and nanoscale level while enhancing or at least preserving the charge transport properties upon processing. Here, we addressed this issue by using a wet lithographic technique, which exploits and enhances the molecular order in polymers by spatial confinement, to fabricate ambipolar organic field effect transistors and inverter circuits based on nanostructured single component ambipolar polymeric semiconductor. In our devices, the current flows through a precisely defined array of nanostripes made of a highly ordered diketopyrrolopyrrole-benzothiadiazole copolymer with high charge carrier mobility (1.45 cm(2) V(-1) s(-1) for electrons and 0.70 cm(2) V(-1) s(-1) for holes). Finally, we demonstrated the functionality of the ambipolar nanostripe transistors by assembling them into an inverter circuit that exhibits a gain (105) comparable to inverters based on single crystal semiconductors.

  15. Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films

    SciTech Connect

    Kim, Joo Han; Holloway, Paul H.

    2004-09-06

    Strong near-infrared (NIR) electroluminescence (EL) at room temperature from neodymium (Nd)-doped gallium nitride (GaN) thin films is reported. The Nd-doped GaN films were grown by radio-frequency planar magnetron cosputtering of separate GaN and metallic Nd targets in a pure nitrogen ambient. X-ray diffraction data did not identify the presence of any secondary phases and revealed that the Nd-doped GaN films had a highly textured wurtzite crystal structure with the c-axis normal to the surface of the film. The EL devices were fabricated with a thin-film multilayered structure of Al/Nd-doped GaN/Al{sub 2}O{sub 3}-TiO{sub 2}/indium-tin oxide and tested at room temperate. Three distinct NIR EL emission peaks were observed from the devices at 905, 1082, and 1364 nm, arising from the radiative relaxation of the {sup 4}F{sub 3sol2} excited-state energy level to the {sup 4}I{sub 9sol2}, {sup 4}I{sub 11sol2}, and {sup 4}I{sub 13sol2} levels of the Nd{sup 3+} ion, respectively. The threshold voltage for all the three emission peaks was {approx}150 V. The external power efficiency of the fabricated EL devices was {approx}1x10{sup -5} measured at 40 V above the threshold voltage.

  16. Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline] aluminum Al(5-Clq)3

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bhargava, Parag; Srivastava, Ritu; Tyagi, Priyanka

    2015-06-01

    A new electroluminescent material tris-[5-choloro-8-hydroxyquinoline] aluminum has been synthesized and characterized. Solution of this material Al(5-Clq)3 in toluene showed absorption maxima at 385 nm which was attributed to the moderate energy (π-π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(5-Clq)3 in toluene solution showed a peak at 522 nm. This material shows thermal stability up to 400 °C. The structure of the device is ITO/0.4 wt%F4-TCNQ doped α-NPD (35 nm) / Al(5-Clq)3 (30 nm) / BCP (6 nm) / Alq3 (30 nm) / LiF (1 nm) / Al (150 nm). This device exhibited a luminescence peak at 585 nm (CIE coordinates, x = 0.39, y = 0.50). The maximum luminescence of the device was 920 Cd/m2 at 25 V. The maximum current efficiency of OLED was 0.27 Cd/A at 20 V and maximum power efficiency was 0.04 lm/W at 18 V.

  17. The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

    SciTech Connect

    Rebohle, L. Wutzler, R.; Braun, M.; Helm, M.; Skorupa, W.; Berencén, Y.; Ramírez, J. M.; Garrido, B.; Hiller, D.

    2014-09-28

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  18. Detection of base-pair mismatches in DNA using graphene-based nanopore device

    NASA Astrophysics Data System (ADS)

    Kundu, Sourav; Karmakar, S. N.

    2016-04-01

    We present a unique way to detect base-pair mismatches in DNA, leading to a different epigenetic disorder by the method of nanopore sequencing. Based on a tight-binding formulation of a graphene-based nanopore device, using the Green’s function approach we study the changes in the electronic transport properties of the device as we translocate a double-stranded DNA through the nanopore embedded in a zigzag graphene nanoribbon. In the present work we are not only successful in detecting the usual AT and GC pairs but also a set of possible mismatches in the complementary base pairing.

  19. THz devices based on 2D electron systems

    NASA Astrophysics Data System (ADS)

    Xing, Huili Grace; Yan, Rusen; Song, Bo; Encomendero, Jimy; Jena, Debdeep

    2015-05-01

    In two-dimensional electron systems with mobility on the order of 1,000 - 10,000 cm2/Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 - 3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

  20. Modeling graphene based surface plasmon waveguides and devices

    NASA Astrophysics Data System (ADS)

    Pond, J.; Duque-Gomez, F.; Alam, A.; Armenta, R.; Niegemann, J.; McGuire, D.; Reid, A.

    2016-02-01

    Graphene is different from most optical materials in that it is a thin material layer with a thickness as small as one atom. Graphene layers can be incorporated into optical simulations using either a surface conductivity material model or a volumetric permittivity material model; however, introducing graphene through a volumetric permittivity is computationally inefficient because it requires very fine discretization grids. We have recently developed a more efficient approach that enables the use of comparatively coarse grids by formulating a discretization of Maxwell's equations (in the time or frequency domains) that combines a surface conductivity description of graphene layers with a volumetric permittivity description of other optical materials. This approach includes the full dispersion characteristics of graphene as specified by the Kubo formula. This paper demonstrates how the combined material description approach can be used to efficiently model state-of-the-art devices that take advantage of the energy confinement provided by surface plasmons. We show how to efficiently model TE and TM polarized surface plasmons, a surface plasmon waveguide switch, and an electro-optical modulator. This last example also includes electrical simulations of graphene and demonstrates how both optical and electrical simulations can be combined to produce a complete model of a graphene based device. For each example, we compare with previously published results, including experimental results.

  1. Modification of Microfluidic Paper-Based Devices with Silica Nanoparticles

    PubMed Central

    Evans, Elizabeth; Gabriel, Ellen Flávia Moreira; Benavidez, Tomás E.; Coltro, Wendell Karlos Tomazelli; Garcia, Carlos D.

    2014-01-01

    This paper describes a silica nanoparticle-modified microfluidic paper-based analytical device (μPAD) with improved color intensity and uniformity for three different enzymatic reactions with clinical relevance (lactate, glucose, and glutamate). The μPADs were produced on Whatman grade 1 filter paper and using a CO2 laser engraver. Silica nanoparticles modified with 3-aminopropyltriethoxysilane (APTES) were then added to the paper devices to facilitate the adsorption of selected enzymes and prevent the washing away effect that creates color gradients in the colorimetric measurements. Here we show three different enzymatic assays for compounds. According to the results herein described, the addition of silica nanoparticles yielded to significant improvements in color intensity and uniformity. The resulting μPADs allowed for the detection of the three analytes in clinically-relevant concentration ranges with limits of detection (LOD) of 0.63 mM, 0.50 mM, and 0.25 mM for lactate, glucose, and glutamate, respectively. An example of an analytical application has been demonstrated for the semi-quantitative detection of all three analytes in artificial urine. The results demonstrate the potential of silica nanoparticles to avoid the washing away effect and improve the color uniformity and intensity in colorimetric bioassays performed on μPADs. PMID:25204446

  2. Bundled carbon nanotube-based sensor on paper-based microfluidic device.

    PubMed

    Lei, Kin Fong; Yang, Shih-I

    2013-10-01

    Bundled carbon nanotube (CNT)-based sensor has been fabricated on paper substrate for chemical sensing applications. Integration of the sensor and fluidic channel was demonstrated for the potential development of a paper-based microfluidic device. In this work, electrical pH measurement of analyte solution was presented to show the functionality of the device. The device with the functions of fluidic transportation and chemical sensing was fabricated on a single paper. The bundled CNT-based sensor was first formed on a sheet of paper by vacuum filtration process. Hence, the hydrophilic channel across the sensor was defined by the application of polydimethylsiloxane (PDMS) material. Therefore, aqueous solution, e.g., sample, can be passively transported along the channels by wicking through the hydrophilic fibers of paper. The pH value of the solution can be electrically measured by the sensor. Determination of the pH value from 3 to 11 of the solutions was demonstrated by measuring the resistance change of the sensor. Because the proposed device is low cost, simple, flexible, and disposable, it is suitable for the development of the analytical device for the developing countries and harsh environments. Moreover, because CNT has excellent properties and can be functionalized by various molecules, the proposed paper-based microfluidic device has potential to realize more chemical and biological assays on paper with high sensitivity and specificity.

  3. Very High Output Thermoelectric Devices Based on ITO Nanocomposites

    NASA Technical Reports Server (NTRS)

    Fralick, Gustave; Gregory, Otto J.

    2009-01-01

    A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

  4. Random laser action from flexible biocellulose-based device

    NASA Astrophysics Data System (ADS)

    dos Santos, Molíria V.; Dominguez, Christian T.; Schiavon, João V.; Barud, Hernane S.; de Melo, Luciana S. A.; Ribeiro, Sidney J. L.; Gomes, Anderson S. L.; de Araújo, Cid B.

    2014-02-01

    We demonstrate random lasing action in flexible bacterial cellulose (BC) membrane containing a laser-dye and either dielectric or metallic nanoparticles (NPs). The novel random laser system consists of BC nanofibers attached with Rhodamine 6G molecules and having incorporated either silica or silver NPs. The laser action was obtained by excitation of the samples with a 6 ns pulsed laser at 532 nm. Minimum laser threshold of ≈0.7 mJ/pulse was measured for the samples with silica NPs, whereas a laser threshold of 2.5 mJ/pulse for a system based on silver NPs was obtained. In both cases a linewidth narrowing from ≈50 to ≈4 nm was observed. Potential applications in biophotonics and life sciences are discussed for this proof-of-concept device.

  5. Large area MEMS based ultrasound device for cancer detection

    NASA Astrophysics Data System (ADS)

    Wodnicki, Robert; Thomenius, Kai; Ming Hooi, Fong; Sinha, Sumedha P.; Carson, Paul L.; Lin, Der-Song; Zhuang, Xuefeng; Khuri-Yakub, Pierre; Woychik, Charles

    2011-08-01

    We present image results obtained using a prototype ultrasound array that demonstrates the fundamental architecture for a large area MEMS based ultrasound device for detection of breast cancer. The prototype array consists of a tiling of capacitive Micromachined Ultrasound Transducers (cMUTs) that have been flip-chip attached to a rigid organic substrate. The pitch on the cMUT elements is 185 μm and the operating frequency is nominally 9 MHz. The spatial resolution of the new probe is comparable to those of production PZT probes; however the sensitivity is reduced by conditions that should be correctable. Simulated opposed-view image registration and Speed of Sound volume reconstruction results for ultrasound in the mammographic geometry are also presented.

  6. Wireless keyboard and mouse device based on Bluetooth

    NASA Astrophysics Data System (ADS)

    Wu, Zheng Davids

    2002-08-01

    Existing cordless keyboard and mouse products that utilize proprietary RF interfaces and protocols, are not interoperable, have no security, and have only one-way operation. Bluetooth will bring the wireless keyboard and mouse application into real life by providing standard RF frequency and protocols, having good protection against interference, providing two-way communication, reliable links and secure data transmission. This paper discusses the benefits of wireless keyboard and mouse based on the bluetooth technology and presents how the prototyping of bluetooth wireless keyboard and mouse was done at Motorola Suzhou Design Center, focusing on the system architecture and S/W stacks designed and implemented on the embedded device. All the protocol stacks are designed and implemented above the HCI UART layer on the Motorola 8 bit HC08 micro-controller. Several key issues for prototyping wireless keyboard/mouse such as security and power management are also discussed here.

  7. Nanoscale strain engineering of graphene and graphene-based devices

    NASA Astrophysics Data System (ADS)

    Yeh, N.-C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D. A.; Chen, C.-C.

    2016-06-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

  8. Working cycles of devices based on bistable carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Shklyaev, Oleg; Mockensturm, Eric; Crespi, Vincent; Carbon Nanotubes Collaboration

    2013-03-01

    Shape-changing nanotubes are an example of variable-shape sp2 carbon-based systems where the competition between strain and surface energies can be moderated by an externally controllable stimuli such as applied voltage, temperature, or pressure of gas encapsulated inside the tube. Using any of these stimuli one can transition a bistable carbon nanotube between the collapsed and inflated states and thus perform mechanical work. During the working cycle of such a device, energy from an electric or heat source is transferred to mechanical energy. Combinations of these stimuli allow the system to convert energy between different sources using the bistable shape-changing tube as a mediator. For example, coupling a bistable carbon nanotube to the heat and charge reservoirs can enable energy transfer between heat and electric forms. The developed theory can be extended to other nano-systems which change configurations in response to external stimuli.

  9. Amyloid detection using a Peltier-based device.

    PubMed

    Cabrera, Miguel A; Ferreyra, Martin G; Cortez, Leonardo; Grupalli, Silvina A; Alvarez, L Leguina; Chehin, Rosana

    2012-01-01

    Amyloid aggregation of polypeptides is related to a growing number of pathologic states known as amyloid disorders. At present, it is clear that any proteins submitted to appropriate physicochemical environment can acquire fibrilar conformation. Fourier transform infrared spectroscopy (FTIR) has been a widely used technique to study temperature- induced amyloid-fibrils formation in vitro. In this way, strict changes and temperature controls are required to characterize the physicochemical basis of the amyloid-fibrils formation. In this article, the development of a highly efficient and accurate Peltier-based system to improve FTIR measurements is presented (see An Old Physics Phenomenon Applied to a Serious Biomedical Pathology. The accuracy of the thermostatic control was tested with biophysical parameters on biological samples probing its reproducibility. The design of the present device contributes to maintain the FTIR environment stable, which represents a real contribution to improve the spectral quality and thus, the reliability of the results.

  10. Illusion thermal device based on material with constant anisotropic thermal conductivity for location camouflage

    NASA Astrophysics Data System (ADS)

    Hou, Quanwen; Zhao, Xiaopeng; Meng, Tong; Liu, Cunliang

    2016-09-01

    Thermal metamaterials and devices based on transformation thermodynamics often require materials with anisotropic and inhomogeneous thermal conductivities. In this study, still based on the concept of transformation thermodynamics, we designed a planar illusion thermal device, which can delocalize a heat source in the device such that the temperature profile outside the device appears to be produced by a virtual source at another position. This device can be constructed by only one kind of material with constant anisotropic thermal conductivity. The condition which should be satisfied by the device is provided, and the required anisotropic thermal conductivity is then deduced theoretically. This study may be useful for the designs of metamaterials or devices since materials with constant anisotropic parameters have great facility in fabrication. A prototype device has been fabricated based on a composite composed by two naturally occurring materials. The experimental results validate the effectiveness of the device.

  11. Encapsulation methods and dielectric layers for organic electrical devices

    DOEpatents

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  12. Electroluminescence and cathodoluminescence from polyethylene and polypropylene films: Spectra reconstruction from elementary components and underlying mechanisms

    NASA Astrophysics Data System (ADS)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    2016-01-01

    The mechanisms of electroluminescence from large band gap polymers used as insulation in electric components are still under debate. It becomes important to unravel the underlying physics of the emission because of increasing thermo-electric stress and a possible relationship between electroluminescence and field withstand. We report herein on the cathodoluminescence spectra of polyethylene and polypropylene films as a way to uncover the nature of its contributions to electroluminescence emission. It is shown that spectra from the two materials are structured around four elementary components, each of them being associated with a specific process contributing to the overall emission with different weights depending on excitation conditions and on materials. The cathodoluminescence and electroluminescence spectra of each material are reconstructed from the four spectral components and their relative contribution are discussed. It is shown that electroluminescence from polyethylene and polypropylene has the same origin pointing towards generic mechanisms in both.

  13. Bright Light-Emitting Diodes Based on Organometal Halide Perovskite Nanoplatelets.

    PubMed

    Ling, Yichuan; Yuan, Zhao; Tian, Yu; Wang, Xi; Wang, Jamie C; Xin, Yan; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

    2016-01-13

    Bright light-emitting diodes based on solution-processable organometal halide perovskite nanoplatelets are demonstrated. The nanoplatelets created using a facile one-pot synthesis exhibit narrow-band emissions at 529 nm and quantum yield up to 85%. Using these nanoparticles as emitters, efficient electroluminescence is achieved with a brightness of 10 590 cd m(-2) . These ligand-capped nanoplatelets appear to be quite stable in moisture, allowing out-of-glovebox device fabrication.

  14. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    NASA Astrophysics Data System (ADS)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  15. Mechanosynthesis of a phenylenedivinylidenebisquinoline. Optical, morphological and electroluminescence properties

    NASA Astrophysics Data System (ADS)

    Gutiérrez, A. R.; Vázquez, R. A.; Moggio, I.; Arias, E.; Coreño, O.; Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, O.; Jiménez-Barrera, R. M.

    2015-04-01

    A phenylenedivinylidenebisquinoline oligomer was obtained by reacting quinaldine with 2,5-bis(octyloxy)terephtalaldehyde via the Knoevenagel reaction by mechanosynthesis. The product was characterized by 1H Homo-J-Resolved NMR, 13C NMR, FT-IR, Fluorescence, UV-Vis spectroscopy and by FAB+ mass spectrometry. X-ray diffraction studies indicate that the molecule is semicrystalline, while laser scanning confocal microscopy shows that the emission comes from the crystals. As a consequence, the morphology and accordingly the PL values in spun films can be changed by varying the spinning conditions. Intrinsic electroluminescent properties are reported using the ITO/M1AMec/Al single layer configuration.

  16. Photo- and Electroluminescence of Substituted Divinyl Dibenzothiophene Sulfone

    NASA Astrophysics Data System (ADS)

    Samsonova, L. G.; Degtyarenko, K. M.; Kopylova, T. N.; Palatova, A. V.; Kukhta, A. V.

    2016-08-01

    The spectral properties of two substituted divinyl dibenzothiophene sulfone in solutions of tetrahydrofuran, polyvinylcarbazole films, and films obtained by thermal vacuum deposition are investigated. The ability of these compounds in thin-layer ITO/PEDOT:PSS/NPD/L/Ca/Al and ITO/PEDOT:PSS/PVK+L/Ca/Al structures (L denotes the examined luminophore) to emit radiation at applied voltage is investigated. It is shown that the spectra of photo- and electroluminescence in the film have a strong red shift of ~100 nm compared to the photoluminescence in solutions. It is suggested that radiation belongs to excimers.

  17. Swarm Optimization-Based Magnetometer Calibration for Personal Handheld Devices

    PubMed Central

    Ali, Abdelrahman; Siddharth, Siddharth; Syed, Zainab; El-Sheimy, Naser

    2012-01-01

    Inertial Navigation Systems (INS) consist of accelerometers, gyroscopes and a processor that generates position and orientation solutions by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the user heading based on Earth's magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are usually corrupted by several errors, including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO)-based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometers. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. Furthermore, the proposed algorithm can help in the development of Pedestrian Navigation Devices (PNDs) when combined with inertial sensors and GPS/Wi-Fi for indoor navigation and Location Based Services (LBS) applications.

  18. Origami paper-based fluidic batteries for portable electrophoretic devices.

    PubMed

    Chen, Sung-Sheng; Hu, Chih-Wei; Yu, I-Fan; Liao, Ying-Chih; Yang, Jing-Tang

    2014-06-21

    A manufacturing approach for paper-based fluidic batteries was developed based on the origami principle (three-dimension paper folding). Microfluidic channels were first created on a filter paper by a wax-printing method. Copper and aluminium sheets were then glued onto the paper as electrodes for the redox reaction. After the addition of copper sulphate and aluminium chloride, commonly available cellophane paper was attached as a membrane to separate the two electrodes. The resulting planar paper sheets were then folded into three-dimensional structures and compiled as a single battery with glue. The two half reactions (Al/Al(3+) and Cu/Cu(2+)) in the folded batteries provided an open-circuit potential from 0.82 V (one cell) to 5.0 V (eight cells in series) depending on the origami design. The prepared battery can provide a stable current of 500 μA and can light a regular LED for more than 65 min. These paper-based fluidic batteries in a set can also be compiled into a portable power bank to provide electric power for many electric or biomedical applications, such as LED lights and electrophoretic devices, as we report here. PMID:24811036

  19. Origami paper-based fluidic batteries for portable electrophoretic devices.

    PubMed

    Chen, Sung-Sheng; Hu, Chih-Wei; Yu, I-Fan; Liao, Ying-Chih; Yang, Jing-Tang

    2014-06-21

    A manufacturing approach for paper-based fluidic batteries was developed based on the origami principle (three-dimension paper folding). Microfluidic channels were first created on a filter paper by a wax-printing method. Copper and aluminium sheets were then glued onto the paper as electrodes for the redox reaction. After the addition of copper sulphate and aluminium chloride, commonly available cellophane paper was attached as a membrane to separate the two electrodes. The resulting planar paper sheets were then folded into three-dimensional structures and compiled as a single battery with glue. The two half reactions (Al/Al(3+) and Cu/Cu(2+)) in the folded batteries provided an open-circuit potential from 0.82 V (one cell) to 5.0 V (eight cells in series) depending on the origami design. The prepared battery can provide a stable current of 500 μA and can light a regular LED for more than 65 min. These paper-based fluidic batteries in a set can also be compiled into a portable power bank to provide electric power for many electric or biomedical applications, such as LED lights and electrophoretic devices, as we report here.

  20. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    PubMed

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate.

  1. Green electroluminescence from Tb4O7 films on silicon: Impact excitation of Tb3+ ions by hot carriers

    NASA Astrophysics Data System (ADS)

    Zhu, Chen; Lv, Chunyan; Jiang, Miaomiao; Zhou, Junwei; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2016-02-01

    We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb3+) ions inherent in a Tb4O7 film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n+-Si or p+-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb3+ ions by the hot electrons (holes), which stem from the electric-field acceleration of the electrons (holes) injected from the n+-Si (p+-Si) substrate via the trap-assisted tunneling mechanism.

  2. Spatially resolved electroluminescence of InGaN-MQW-LEDs[Multiple Quantum Wells-Light Emitting Diodes

    SciTech Connect

    Schwegler, V.; Seyboth, M.; Kirchner, C.; Scherer, M.; Kamp, M.; Fischer, P.; Christen, J.; Zacharias, M.

    2000-07-01

    Electroluminescence (EL) is the most significant measure for light-emitting diodes since it probes the most relevant properties of the fully processed device during operation. In addition to the information gained by conventional spectrally resolved EL, scanning micro-EL provides spatially resolved information. The devices under investigation are InGaN/GaN-LEDs with single peak band-band emission at about 400 nm grown by MOVPE on sapphire substrates. The {mu}-EL-characterization is performed as a function of injection current densities and the emission is investigated from the epitaxial layer as well as from substrate side. Spatially resolved wavelength images reveal emission peaks between 406 nm and 417 nm, corresponding either to In fluctuations of 1--1.5% or local fluctuations of piezo electric fields. Beside the information on the emission wavelength fluctuations {mu}-EL is used to determine the temperature distribution in the LEDs and to investigate transparent contacts.

  3. Mg2(Si,Sn)-based thermoelectric materials and devices

    NASA Astrophysics Data System (ADS)

    Gao, Peng

    Thermoelectric effects are phenomena found in materials that can achieve direct conversion between heat flow and electricity. One important application of thermoelectric effects is thermoelectric generators, which can generate electricity when a temperature gradient is applied. Thermoelectric generators make use of various sources of heat and it is considered a promising solution for waste heat recovery. The conversion efficiency of thermoelectric generators depends on the materials used in the devices. Significant improvement in the performance of thermoelectric materials has been made in the past few decades. However, most of the good thermoelectric materials being investigated have limitations, such as the high materials cost, high materials density and toxicity of the constituent elements. The Mg2(Si,Sn)-based materials studied in this work are promising candidates for thermoelectric generators in the mid-temperature range and have drawn increasing research interest in recent years because these materials are high performance thermoelectrics that are low cost, low-density and non-toxic. In this work, systematic studies were performed on the Mg2(Si,Sn) thermoelectric materials. Thermal phase stability was studied for different compositions of Mg2Si1-xSnx and Mg2Si0.4Sn 0.6 was used as base material for further optimization. Both n-type and p-type samples were obtained by doping the materials with different elements. Peak ZT ˜ 1.5 for the n-type and ZT ˜ 0.7 for the p-type materials were obtained, both of which are among the best reported results so far. Experimental work was also done to study the techniques to develop the Mg2Si 0.4Sn0.6 materials into working devices. Different electrode materials were tested in bonding experiment for this compound, and copper was found to be the best electrode material for Mg2Si 0.4Sn0.6. Preliminary work was done to demonstrate the possibility of fabricating a Mg2Si0.4Sn0.6-based thermoelectric generator and the result is

  4. Optimal alignment of mirror based pentaprisms for scanning deflectometric devices

    SciTech Connect

    Barber, Samuel K.; Geckeler, Ralf D.; Yashchuk, Valeriy V.; Gubarev, Mikhail V.; Buchheim, Jana; Siewert, Frank; Zeschke, Thomas

    2011-03-04

    In the recent work [Proc. of SPIE 7801, 7801-2/1-12 (2010), Opt. Eng. 50(5) (2011), in press], we have reported on improvement of the Developmental Long Trace Profiler (DLTP), a slope measuring profiler available at the Advanced Light Source Optical Metrology Laboratory, achieved by replacing the bulk pentaprism with a mirror based pentaprism (MBPP). An original experimental procedure for optimal mutual alignment of the MBPP mirrors has been suggested and verified with numerical ray tracing simulations. It has been experimentally shown that the optimally aligned MBPP allows the elimination of systematic errors introduced by inhomogeneity of the optical material and fabrication imperfections of the bulk pentaprism. In the present article, we provide the analytical derivation and verification of easily executed optimal alignment algorithms for two different designs of mirror based pentaprisms. We also provide an analytical description for the mechanism for reduction of the systematic errors introduced by a typical high quality bulk pentaprism. It is also shown that residual misalignments of an MBPP introduce entirely negligible systematic errors in surface slope measurements with scanning deflectometric devices.

  5. Workplace for manufacturing devices based on optical fiber tapers

    NASA Astrophysics Data System (ADS)

    Martan, Tomáš; Honzátko, Pavel; Kaňka, Jiři; Novotný, Karel

    2007-04-01

    Many important optical fiber components are based on tapered optical fibers. A taper made from a single-mode optical fiber can be used, e.g., as a chemical sensor, bio-chemical sensor, or beam expander. A fused pair of tapers can be used as a fiber directional coupler. Fiber tapers can be fabricated in several simple ways. However, a tapering apparatus is required for more sophisticated fabrication of fiber tapers. The paper deals with fabrication and characterization of fiber tapers made from a single-mode optical fiber. A tapering apparatus was built for producing devices based on fiber tapers. The apparatus is universal and enables one to taper optical fibers of different types by a method utilizing stretching a flame-heated section of a silica fiber. Fiber tapers with constant waist length and different waist diameters were fabricated. The transition region of each fiber taper monotonically decreased in diameter along its length from the untapered fiber to the taper waist. The fiber tapers were fabricated with a constant drawing velocity, while the central zone of the original single-mode fiber was heated along a constant length. The spectral transmissions of the manufactured fiber tapers with different parameters were measured by the cut-back method.

  6. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, Nosoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-06-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

  7. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    PubMed Central

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-01-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. PMID:26067060

  8. High-sensitivity strain visualization using electroluminescence technologies

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Jo, Hongki

    2016-04-01

    Visualizing mechanical strain/stress changes is an emerging area in structural health monitoring. Several ways are available for strain change visualization through the color/brightness change of the materials subjected to the mechanical stresses, for example, using mechanoluminescence (ML) materials and mechanoresponsive polymers (MRP). However, these approaches were not effectively applicable for civil engineering system yet, due to insufficient sensitivity to low-level strain of typical civil structures and limitation in measuring both static and dynamic strain. In this study, design and validation for high-sensitivity strain visualization using electroluminescence technologies are presented. A high-sensitivity Wheatstone bridge, of which bridge balance is precisely controllable circuits, is used with a gain-adjustable amplifier. The monochrome electroluminescence (EL) technology is employed to convert both static and dynamic strain change into brightness/color change of the EL materials, through either brightness change mode (BCM) or color alternation mode (CAM). A prototype has been made and calibrated in lab, the linearity between strain and brightness change has been investigated.

  9. Electron-hole pair mechanism for the magnetic field effect in organic light emitting diodes based on poly(paraphenylene vinylene)

    NASA Astrophysics Data System (ADS)

    Bagnich, S. A.; Niedermeier, U.; Melzer, C.; Sarfert, W.; von Seggern, H.

    2009-12-01

    We investigated the magnetic field effect (MFE) on current and electroluminescence in organic light emitting diodes based on poly(paraphenylene vinylene). The MFE was strictly positive in the full range of device operation and showed nonmonotonic dependencies on applied voltage and temperature. Furthermore, the MFE on current obtained in bipolar devices was significantly larger than in hole-dominated devices. We discuss our results in the framework of an electron-hole pair model and show that the model can explain all functional dependencies observed in our devices.

  10. Photonic variable delay devices based on optical birefringence

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor)

    2005-01-01

    Optical variable delay devices for providing variable true time delay to multiple optical beams simultaneously. A ladder-structured variable delay device comprises multiple basic building blocks stacked on top of each other resembling a ladder. Each basic building block has two polarization beamsplitters and a polarization rotator array arranged to form a trihedron; Controlling an array element of the polarization rotator array causes a beam passing through the array element either going up to a basic building block above it or reflect back towards a block below it. The beams going higher on the ladder experience longer optical path delay. An index-switched optical variable delay device comprises of many birefringent crystal segments connected with one another, with a polarization rotator array sandwiched between any two adjacent crystal segments. An array element in the polarization rotator array controls the polarization state of a beam passing through the element, causing the beam experience different refractive indices or path delays in the following crystal segment. By independently control each element in each polarization rotator array, variable optical path delays of each beam can be achieved. Finally, an index-switched variable delay device and a ladder-structured variable device are cascaded to form a new device which combines the advantages of the two individual devices. This programmable optic device has the properties of high packing density, low loss, easy fabrication, and virtually infinite bandwidth. The device is inherently two dimensional and has a packing density exceeding 25 lines/cm2. The delay resolution of the device is on the order of a femtosecond (one micron in space) and the total delay exceeds 10 nanosecond. In addition, the delay is reversible so that the same delay device can be used for both antenna transmitting and receiving.

  11. Methods of use for sensor based fluid detection devices

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor)

    2001-01-01

    Methods of use and devices for detecting analyte in fluid. A system for detecting an analyte in a fluid is described comprising a substrate having a sensor comprising a first organic material and a second organic material where the sensor has a response to permeation by an analyte. A detector is operatively associated with the sensor. Further, a fluid delivery appliance is operatively associated with the sensor. The sensor device has information storage and processing equipment, which is operably connected with the device. This device compares a response from the detector with a stored ideal response to detect the presence of analyte. An integrated system for detecting an analyte in a fluid is also described where the sensing device, detector, information storage and processing device, and fluid delivery device are incorporated in a substrate. Methods for use for the above system are also described where the first organic material and a second organic material are sensed and the analyte is detected with a detector operatively associated with the sensor. The method provides for a device, which delivers fluid to the sensor and measures the response of the sensor with the detector. Further, the response is compared to a stored ideal response for the analyte to determine the presence of the analyte. In different embodiments, the fluid measured may be a gaseous fluid, a liquid, or a fluid extracted from a solid. Methods of fluid delivery for each embodiment are accordingly provided.

  12. Charge transfer devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Reed, W. E.

    1980-04-01

    The technology, design, fabrication, and applications of charge transfer devices are presented in the cited research reports. Applications include imaging, signal processing, detectors, filters, amplifiers, and memory devices. This updated bibliography contains 107 abstracts, all of which are new entries to the previous edition.

  13. Irradiance Decay in Fluorescent and Light-emitting Diode-based Phototherapy Devices: A Pilot Study.

    PubMed

    Olusanya, Bolajoko O; Osibanjo, Folashade B; Emokpae, Abieyuwa A; Slusher, Tina M

    2016-10-01

    We set out to determine the rate of decline of irradiance for fluorescent tube (FT) and light-emitting diode (LED) phototherapy devices in resource-limited settings where routine irradiance monitoring is uncommon. Irradiance levels (μW/cm(2)/nm) were measured weekly using BiliBlanket(®) II Meter on three FT-based and two LED-based phototherapy devices over a 19 week period. The two LED devices showed stable irradiance levels and did not require any lamp changes. The three FT-based devices showed rapid decline in irradiance, and all required three complete lamp exchanges approximately every 5-6 weeks. FT-based devices are associated with more rapid decline in irradiance to sub-therapeutic levels and require more frequent lamp changes than LED devices. Clinicians should be alert to the maintenance requirements of the phototherapy devices available in their settings to ensure efficacy of treatment.

  14. Irradiance Decay in Fluorescent and Light-emitting Diode-based Phototherapy Devices: A Pilot Study.

    PubMed

    Olusanya, Bolajoko O; Osibanjo, Folashade B; Emokpae, Abieyuwa A; Slusher, Tina M

    2016-10-01

    We set out to determine the rate of decline of irradiance for fluorescent tube (FT) and light-emitting diode (LED) phototherapy devices in resource-limited settings where routine irradiance monitoring is uncommon. Irradiance levels (μW/cm(2)/nm) were measured weekly using BiliBlanket(®) II Meter on three FT-based and two LED-based phototherapy devices over a 19 week period. The two LED devices showed stable irradiance levels and did not require any lamp changes. The three FT-based devices showed rapid decline in irradiance, and all required three complete lamp exchanges approximately every 5-6 weeks. FT-based devices are associated with more rapid decline in irradiance to sub-therapeutic levels and require more frequent lamp changes than LED devices. Clinicians should be alert to the maintenance requirements of the phototherapy devices available in their settings to ensure efficacy of treatment. PMID:27118821

  15. Carbon material based microelectromechanical system (MEMS): Fabrication and devices

    NASA Astrophysics Data System (ADS)

    Xu, Wenjun

    This PhD dissertation presents the exploration and development of two carbon materials, carbon nanotubes (CNTs) and carbon fiber (CF), as either key functional components or unconventional substrates for a variety of MEMS applications. Their performance in three different types of MEMS devices, namely, strain/stress sensors, vibration-powered generators and fiber solar cells, were evaluated and the working mechanisms of these two non-traditional materials in these systems were discussed. The work may potentially enable the development of new types of carbon-MEMS devices. Carbon nanotubes were selected from the carbon family due to several advantageous characteristics that this nanomaterial offers. They carry extremely high mechanical strength (Ey=1TPa), superior electrical properties (current density of 4x109 A/cm2), exceptional piezoresistivity (G=2900), and unique spatial format (high aspect ratio hollow nanocylinder), among other properties. If properly utilized, all these merits can give rise to a variety of new types of carbon nanotube based micro- and nanoelectronics that can greatly fulfill the need for the next generation of faster, smaller and better devices. However, before these functions can be fully realized, one substantial issue to cope with is how to implement CNTs into these systems in an effective and controllable fashion. Challenges associated with CNTs integration include very poor dispersibility in solvents, lack of melting/sublimation point, and unfavorable rheology with regard to mixing and processing highly viscous, CNT-loaded polymer solutions. These issues hinder the practical progress of CNTs both in a lab scale and in the industrial level. To this end, a MEMS-assisted electrophoretic deposition technique was developed, aiming to achieve controlled integration of CNT into both conventional and flexible microsystems at room temperature with a relatively high throughput. MEMS technology has demonstrated strong capability in developing

  16. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  17. Quasioptical devices based on extraordinary transmission at THz

    NASA Astrophysics Data System (ADS)

    Beruete, Miguel

    2016-04-01

    In this work I will present our latest advances in components developed from extraordinary transmission concepts operating at terahertz (THz) frequencies. First, a structure exhibiting two different extraordinary transmission resonances depending on the polarization of the incident wave will be shown. The peaks of transmission appear at approximately 2 and 2.5 THz for vertical and horizontal polarization, respectively, with a transmittance above 60% in both cases. Later on, a meandering line structure able to tune the extraordinary transmission resonance will be discussed. The operation frequency in this case is between 9 and 17 THz. A self-complementary polarizer will be then presented, with a high polarization purity. The fundamentals of this device based on the Babinet's principle will be discussed in depth. Finally, all these structures will be combined together to produce a dual-band Quarter Wave Plate able to convert a linear polarization at the input in a circular polarization at the output at two different bands, 1 and 2.2. THz. Some final words regarding the potential of extraordinary transmission for sensing applications will close the contribution.

  18. NiCu-based superconducting devices: fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Ruotolo, A.; Pullini, D.; Adamo, C.; Pepe, G. P.; Maritato, L.; Innocenti, G.; Perlo, P.

    2006-06-01

    The critical Josephson current (IC) in superconducting/ferromagnetic (S/F) multilayer-based junctions can be controlled by changing the relative directions of the magnetization in the F-layers. Recent experimental works [1, 2] show that an enhancement of IC is achieved in S/F weak links when the alternating F-layers are antiparallel aligned. We present preliminary experimental results concerning the dependence of IC on the relative orientation of the ferromagnetic layers in S/F1/I/F2/S tunnel junctions where the F-layers are obtained by changing the relative composition of NiCu alloys. The multilayers were grown by electron beam deposition, and processed by Focused Ion Beam lithography. The magnetic state of the devices was directly determined by measuring the current perpendicular to plane (CPP) magnetoresistance (MR) at high bias. IC was found to be larger when the F-layers are antiparallel aligned. The maximum change of IC corresponds to the maximum change of MR. The application of a magnetic field induces a transition in the shape of the currentvoltage curve that seems to suggest Coulomb blockade effect.

  19. 77 FR 16126 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-19

    ... Food and Drug Administration 21 CFR Part 866 Microbiology Devices; Reclassification of Nucleic Acid...: Proposed rule. SUMMARY: The Food and Drug Administration (FDA) is proposing to reclassify nucleic acid... effectiveness of the device for its intended use. II. Regulatory Background of the Device Nucleic acid-based...

  20. Tunable Photonic Devices in Ferroelectric-Based Layered Structures

    NASA Astrophysics Data System (ADS)

    Xin, Jianzhuo

    This thesis presents the studies on the optical properties of perovskite ferroelectric thin films, as well as the preparation and applications of ferroelectrics in tunable photonic devices. Ba(Zr,Ti)O3 (BZT) thin films with different Zr concentration were grown on MgO substrates by pulsed laser deposition, and their structural and optical properties in the visible range were systematically characterized, including the out-of-plane lattice constant, grain size, refractive index, optical band gap energy, electro-optic coefficient, optical loss and absorption coefficient. The obtained results provide information for the design of BZT thin film-based optical devices. One-dimensional photonic crystal filter working in the terahertz (THz) range was studied. The transmission properties of SrTiO3 (STO) crystals were first characterized by THz time-domain spectroscopy. Si/STO multilayers with different STO defect thicknesses were designed by the transfer matrix method and then constructed by polishing and stacking. The shift of defect mode was observed and comparable with the calculations. Two-dimensional photonic structures in the optical and infra-red range were then attempted. A combination of nanoimprint lithography and inductively coupled plasma etching were investigated on (Ba,Sr)TiO3 thin films. Then, in order to simplify the nanoimprint process and allow thick metal sacrificial layer deposition for high aspect-ratio etching, a transfer imprint lithography technique was developed. Finally, surface plasmon resonance (SPR) tuning via thermally-induced refractive index changes in ferroelectrics was investigated. Ag stripes with periodicity 750 nm were fabricated on flat BST surface by nanoimprint lithography and subsequent lift-off. (-1), (2) and (-2) SP modes from Ag/BST interface were observed in visible range. Red shift of the modes up to 3.9 nm was obtained with increasing temperature. Then continuous Au film on corrugated BST surface with periodicity of 1 mum was

  1. Solution-processed low dimensional nanomaterials with self-assembled polymers for flexible photo-electronic devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Park, Cheolmin

    2015-09-01

    Self assembly driven by complicated but systematic hierarchical interactions offers a qualified alternative for fabricating functional micron or nanometer scale pattern structures that have been potentially useful for various organic and nanotechnological devices. Self assembled nanostructures generated from synthetic polymer systems such as controlled polymer blends, semi-crystalline polymers and block copolymers have gained a great attention not only because of the variety of nanostructures they can evolve but also because of the controllability of these structures by external stimuli. In this presentation, various novel photo-electronic materials and devices are introduced based on the solution-processed low dimensional nanomaterials such as networked carbon nanotubes (CNTs), reduced graphene oxides (rGOs) and 2 dimensional transition metal dichalcogenides (TMDs) with self assembled polymers including field effect transistor, electroluminescent device, non-volatile memory and photodetector. For instance, a nanocomposite of networked CNTs and a fluorescent polymer turned out an efficient field induced electroluminescent layer under alternating current (AC) as a potential candidate for next generation displays and lightings. Furthermore, scalable and simple strategies employed for fabricating rGO as well as TMD nanohybrid films allowed for high performance and mechanically flexible non-volatile resistive polymer memory devices and broad band photo-detectors, respectively.

  2. Optical devices based on dye-coated superconductor junctions: An example of a composite molecule-superconductor device

    SciTech Connect

    Zhao, J.; Jurbergs, D.; Yamazi, B.; McDevitt, J.T.

    1992-03-25

    High-temperature superconductors provide new opportunities as materials used in the construction of hybrid molecule-superconductor components. Here, the authors describe fabrication methods for and operation of optical sensors based on molecular dye-coated superconductor junctions. Devices prepared from yttrium barium cuprates and using octaethylporphyrin, phthalocyanine, and rhodamine 6G as dyes have been prepared. 9 refs., 1 fig.

  3. Nonvolatile organic transistor memory devices based on nanostructured polymeric materials

    NASA Astrophysics Data System (ADS)

    Lu, Mau-Shen; Lu, Chien; Li, Meng-Hsien; Liu, Cheng-Liang; Chen, Wen-Chang

    2014-10-01

    We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.

  4. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    PubMed

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  5. Graphene Electronic Device Based Biosensors and Chemical Sensors

    NASA Astrophysics Data System (ADS)

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  6. Organic light-emitting devices using spin-dependent processes

    DOEpatents

    Vardeny, Z. Valy; Wohlgenannt, Markus

    2010-03-23

    The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

  7. Ultrathin flexible memory devices based on organic ferroelectric transistors

    NASA Astrophysics Data System (ADS)

    Sugano, Ryo; Hirai, Yoshinori; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    Here, we demonstrate ultrathin, flexible nonvolatile memory devices with excellent durability under compressive strain. Ferroelectric-gate field-effect transistors (FeFETs) employing organic semiconductor and polymer ferroelectric layers are fabricated on a 1-µm-thick plastic film substrate. The FeFETs are characterized by measuring their transfer characteristics, programming time, and data retention time. The data retention time is almost unchanged even when a 50% compressive strain is applied to the devices. To clarify the origin of the excellent durability of the devices against compressive strain, an intermediate plane is calculated. From the calculation result, the intermediate plane is placed close to the channel region of the FeFETs. The high flexibility of the ferroelectric polymer and ultrathin device structure contributes to achieving a bending radius of 0.8 µm without the degradation of memory characteristics.

  8. Single-atom based coherent quantum interference device structure.

    PubMed

    Naydenov, Borislav; Rungger, Ivan; Mantega, Mauro; Sanvito, Stefano; Boland, John J

    2015-05-13

    We describe the fabrication, operation principles, and simulation of a coherent single-atom quantum interference device (QID) structure on Si(100) controlled by the properties of single atoms. The energy and spatial distribution of the wave functions associated with the device are visualized by scanning tunneling spectroscopy and the amplitude and phase of the evanescent wave functions that couple into the quantum well states are directly measured, including the action of an electrostatic gate. Density functional theory simulations were employed to simulate the electronic structure of the device structure, which is in excellent agreement with the measurements. Simulations of device transmission demonstrate that our coherent single-atom QID can have ON-OFF ratios in excess of 10(3) with potentially minimal power dissipation.

  9. Image magnification in transformation optics devices based on tapered waveguides

    NASA Astrophysics Data System (ADS)

    Zimmerman, William; Jensen, Christopher; Smolyaninova, Vera; Smolyaninov, Igor

    Recent progress in metamaterial and transformation optics (TO) research gave rise to such fascinating devices as perfect lenses, invisibility cloaks, and numerous other unusual electromagnetic devices. However, the metamaterials have problems with low-loss broadband performance and complexity of fabrication, especially in the visible frequency range. Our TO devices allow us to circumvent these difficulties by using lithographically defined metal/dielectric waveguides to emulate metamaterial properties. Adiabatic variations of the waveguide shape enable control of the effective refractive index experienced by light propagating inside the waveguide. The achieved image magnification is consistent with numerical simulations. We have studied wavelength and polarization dependent performance of the waveguides. Our experimental designs appear to be broadband, which has been verified in the 480-633 nm range. These novel optical devices considerably extend our ability to control light on sub-micrometer scales. This research was supported by the NSF Grant DMR-1104676.

  10. Single-atom based coherent quantum interference device structure.

    PubMed

    Naydenov, Borislav; Rungger, Ivan; Mantega, Mauro; Sanvito, Stefano; Boland, John J

    2015-05-13

    We describe the fabrication, operation principles, and simulation of a coherent single-atom quantum interference device (QID) structure on Si(100) controlled by the properties of single atoms. The energy and spatial distribution of the wave functions associated with the device are visualized by scanning tunneling spectroscopy and the amplitude and phase of the evanescent wave functions that couple into the quantum well states are directly measured, including the action of an electrostatic gate. Density functional theory simulations were employed to simulate the electronic structure of the device structure, which is in excellent agreement with the measurements. Simulations of device transmission demonstrate that our coherent single-atom QID can have ON-OFF ratios in excess of 10(3) with potentially minimal power dissipation. PMID:25826690

  11. Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)

    SciTech Connect

    Mezdrogina, M. M. Kostina, L. S.; Beliakova, E. I.; Kuzmin, R. V.

    2013-09-15

    The photo- and electroluminescence spectra of silicon-based structures formed by direct bonding with simultaneous doping with rare-earth metals are studied. It is shown that emission in the visible and IR spectral ranges can be obtained from n-Si:Er/p-Si and n-Si:Eu/p-Si structures fabricated by the method suggested in the study. The results obtained make this method promising for the fabrication of optoelectronic devices.

  12. 78 FR 36698 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-19

    ... Nucleic Acid-Based Systems for Mycobacterium tuberculosis Complex in Respiratory Specimens AGENCY: Food...) is proposing to reclassify nucleic acid-based in vitro diagnostic devices for the detection of... Controls Guideline: Nucleic Acid-Based In Vitro Diagnostic Devices for the Detection of...

  13. Ex post manipulation of barriers in InGaAs tunnel injection devices

    SciTech Connect

    Talalaev, Vadim G.; Cirlin, George E.; Novikov, Boris V.; Fuhrmann, Bodo; Werner, Peter; Tomm, Jens W.

    2015-01-05

    Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

  14. Carbonitride based phosphors and light emitting devices using the same

    DOEpatents

    Li, Yuanqiang; Tian, Yongchi; Romanelli, Michael Dennis

    2013-08-20

    Disclosed herein is a novel group of carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the present invention is directed to a novel family of carbidonitride-based phosphors expressed as follows: Ca.sub.1-xAl.sub.x-xySi.sub.1-x+xyN.sub.2-x-xyC.sub.xy:A; (1) Ca.sub.1-x-zNa.sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xyC.sub.xy:- A; (2) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x- -xyC.sub.xy:A; (3) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3C.sub.xyO.sub.w-v/2H.sub.v:A; and (4) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3-v/3C.sub.xyO.sub.wH.sub.v:A, (4a) wherein 0xy+z, and 0

  15. Paper-Based Device for Rapid Visualization of NADH Based on Dissolution of Gold Nanoparticles.

    PubMed

    Liang, Pingping; Yu, Haixiang; Guntupalli, Bhargav; Xiao, Yi

    2015-07-15

    We describe a paper-based device that enables rapid and sensitive room-temperature detection of dihydronicotinamide adenine dinucleotide (NADH) via a colorimetric readout and demonstrate its value for monitoring NAD+-driven enzymatic reactions. Our system is based on NADH-mediated inhibition of gold nanoparticle (AuNPs) dissolution in a Au3+-cetyltrimethylammonium bromide (CTAB) solution. We fabricated a device consisting of a mixed cellulose ester paper featuring a wax-encircled, AuNP-coated film atop a cotton absorbent layer sandwiched between two plastic cover layers. In the absence of NADH, the Au3+-CTAB complex dissolves the AuNP layer completely, generating a white color in the test zone. In the presence of NADH, Au3+ is rapidly reduced to Au+, greatly decreasing the dissolution of AuNPs and yielding a red color that becomes stronger at increasing concentrations of NADH. This device exploits capillary force-assisted vertical diffusion, allowing us to apply a 25 μL sample to a surface-confined test zone to achieve a detection limit of 12.5 μM NADH. We used the enzyme glucose dehydrogenase as a model to demonstrate that our paper-based device can monitor NAD+-driven biochemical processes with and without selective dehydrogenase inhibitors by naked-eye observation within 4 min at room temperature in a small sample volume. We believe that our paper-based device could offer a valuable and low-cost analytical tool for monitoring NAD+-associated enzymatic reactions and screening for dehydrogenase inhibitors in a variety of testing contexts.

  16. Inkjet printed polymer light-emitting devices fabricated by thermal embedding of semiconducting polymer nanospheres in an inert matrix

    NASA Astrophysics Data System (ADS)

    Fisslthaler, Evelin; Sax, Stefan; Scherf, Ullrich; Mauthner, Gernot; Moderegger, Erik; Landfester, Katharina; List, Emil J. W.

    2008-05-01

    An aqueous dispersion of semiconducting polymer nanospheres was used to fabricate polymer light-emitting devices by inkjet printing in an easy-to-apply process with a minimum feature size of 20μm. To form the devices, the electroluminescent material was printed on a nonemitting polystyrene matrix layer and embedded by thermal annealing. The process allows the printing of light-emitting thin-film devices without extensive optimization of film homogeneity and thickness of the active layer. Optical micrographs of printed device arrays, electroluminescence emission spectra, and I /V characteristics of printed ITO/PEDOT:PSS/PS/SPN/Al devices are presented.

  17. Highly stretchable electroluminescent skin for optical signaling and tactile sensing.

    PubMed

    Larson, C; Peele, B; Li, S; Robinson, S; Totaro, M; Beccai, L; Mazzolai, B; Shepherd, R

    2016-03-01

    Cephalopods such as octopuses have a combination of a stretchable skin and color-tuning organs to control both posture and color for visual communication and disguise. We present an electroluminescent material that is capable of large uniaxial stretching and surface area changes while actively emitting light. Layers of transparent hydrogel electrodes sandwich a ZnS phosphor-doped dielectric elastomer layer, creating thin rubber sheets that change illuminance and capacitance under deformation. Arrays of individually controllable pixels in thin rubber sheets were fabricated using replica molding and were subjected to stretching, folding, and rolling to demonstrate their use as stretchable displays. These sheets were then integrated into the skin of a soft robot, providing it with dynamic coloration and sensory feedback from external and internal stimuli.

  18. Highly stretchable electroluminescent skin for optical signaling and tactile sensing.

    PubMed

    Larson, C; Peele, B; Li, S; Robinson, S; Totaro, M; Beccai, L; Mazzolai, B; Shepherd, R

    2016-03-01

    Cephalopods such as octopuses have a combination of a stretchable skin and color-tuning organs to control both posture and color for visual communication and disguise. We present an electroluminescent material that is capable of large uniaxial stretching and surface area changes while actively emitting light. Layers of transparent hydrogel electrodes sandwich a ZnS phosphor-doped dielectric elastomer layer, creating thin rubber sheets that change illuminance and capacitance under deformation. Arrays of individually controllable pixels in thin rubber sheets were fabricated using replica molding and were subjected to stretching, folding, and rolling to demonstrate their use as stretchable displays. These sheets were then integrated into the skin of a soft robot, providing it with dynamic coloration and sensory feedback from external and internal stimuli. PMID:26941316

  19. Contactless Electroluminescence Imaging for Cell and Module Characterization

    SciTech Connect

    Johnston, Steve

    2015-06-14

    Module performance can be characterized by imaging using baseline and periodic images to track defects and degradation. Both thermal images, which can be acquired during sunny operating conditions, and photoluminescence images, which could be acquired at night, can be collected without electrical connection. Electroluminescence (EL) images, which are useful to detect many types of defects such as cracks, interconnect and solder faults, and resistances, have typically required electrical connection to drive current in the cells and modules. Here, a contactless EL imaging technique is proposed, which provides an EL image without the need for electrical connection to drive current through the module. Such EL imaging has the capability to be collected at night without disruption to daytime power generation.

  20. Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

    NASA Astrophysics Data System (ADS)

    Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

    2015-12-01

    The Graphene-Base Heterojunction Transistor (GBHT) is a novel device concept with a high potential for analog high-frequency RF operation, in which the current is due to both thermionic emission and tunneling. In this paper we study through numerical simulations the influence of previously uninvestigated aspects of Si- and Ge-based GBHTs-namely, crystallographic orientation and doping density values-on the device performance; a comparison with an aggressively scaled HBT structure is then reported. The simulations are carried out with an in-house developed code based on a 1-D quantum transport model within the effective mass approximation and the assumptions of ballistic transport with non-parabolic corrections and ideal semiconductor-graphene interface. We show that crystallographic orientation has a negligible effect on the GBHT performance. The doping density values in the GBHT emitter and collector regions can be tailored to maximize the device performance: the Si device shows better overall performance than the Ge one, yielding a peak cut-off frequency fT higher than 4 THz together with an intrinsic voltage gain above 10, or even higher fT at the cost of a lower gain. The Si-based GBHT can potentially outperform the SiGe HBT by a 2.8 higher fT . For a Si-based GBHT with a circular active region of diameter 50-100 nm, a theoretical balanced value for fT and fmax above 2 THz can be achieved, provided the base parasitics are carefully minimized.

  1. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    NASA Astrophysics Data System (ADS)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  2. A novel thermal acoustic device based on porous graphene

    NASA Astrophysics Data System (ADS)

    Tao, Lu-Qi; Liu, Ying; Tian, He; Ju, Zhen-Yi; Xie, Qian-Yi; Yang, Yi; Ren, Tian-Ling

    2016-01-01

    A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser's irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration, low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.

  3. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  4. Polymer-based actuators for virtual reality devices

    NASA Astrophysics Data System (ADS)

    Bolzmacher, Christian; Hafez, Moustapha; Benali Khoudja, Mohamed; Bernardoni, Paul; Dubowsky, Steven

    2004-07-01

    Virtual Reality (VR) is gaining more importance in our society. For many years, VR has been limited to the entertainment applications. Today, practical applications such as training and prototyping find a promising future in VR. Therefore there is an increasing demand for low-cost, lightweight haptic devices in virtual reality (VR) environment. Electroactive polymers seem to be a potential actuation technology that could satisfy these requirements. Dielectric polymers developed the past few years have shown large displacements (more than 300%). This feature makes them quite interesting for integration in haptic devices due to their muscle-like behaviour. Polymer actuators are flexible and lightweight as compared to traditional actuators. Using stacks with several layers of elatomeric film increase the force without limiting the output displacement. The paper discusses some design methods for a linear dielectric polymer actuator for VR devices. Experimental results of the actuator performance is presented.

  5. Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

    SciTech Connect

    Ye, Yu; Ye, Ziliang; Gharghi, Majid; Zhu, Hanyu; Wang, Yuan; Zhao, Mervin; Yin, Xiaobo; Zhang, Xiang

    2014-05-12

    In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.

  6. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    NASA Astrophysics Data System (ADS)

    Lin, Chung-Yi; Huang, Chih-Hsiung; Huang, Shih-Hsien; Chang, Chih-Chiang; Liu, C. W.; Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping

    2016-08-01

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  7. Analysis of electroluminescence images in small-area circular CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

    2013-09-01

    The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

  8. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  9. Three-Colour Single-Mode Electroluminescence from Alq3 Tuned by Microcavities

    NASA Astrophysics Data System (ADS)

    Zhao, Jia-Min; Ma, Feng-Ying; Liu, Xing-Yuan; Liu, Yun; Chu, Guo-Qiang; Ning, Yong-Qiang; Wang, Li-Jun

    2002-10-01

    Organic metal microcavities were fabricated by using full-reflectivity aluminium film and semi-transparent silver film as cavity mirrors. Unlike conventional organic microcavities, such as the typical structure of glass/DBR/ITO/organic layers/metal mirror, a microcavity with a shorter cavity length was obtained by using two metal mirrors, where DBR is the distributed Bragg reflector consisting of alternate quarter-wave layers of high and low refractive index materials. It is realized that red, green and blue single-mode electroluminescence (EL) from the microcavities with the structure, glass/Ag/TPD/Alq3/Al, are electrically-driven when the thickness of the Alq3 layer changes. Compared to a non-cavity reference sample whose EL spectrum peak is located at 520 nm with a full width at half maximum (FWHM) of 93 nm, the microcavity devices show apparent cavity effects. The EL spectra of red, green and blue microcavities are peaked at 604 nm, 540 nm and 491 nm, with FWHM of 43 nm, 38 nm and 47 nm, respectively.

  10. Ultrabroad Photoluminescence and Electroluminescence at New Wavelengths from Doped Organometal Halide Perovskites.

    PubMed

    Zhou, Yang; Yong, Zi-Jun; Zhang, Kai-Cheng; Liu, Bo-Mei; Wang, Zhao-Wei; Hou, Jing-Shan; Fang, Yong-Zheng; Zhou, Yi; Sun, Hong-Tao; Song, Bo

    2016-07-21

    Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths. PMID:27377481

  11. Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

    SciTech Connect

    Huh, Chul Kim, Tae-Youb; Ahn, Chang-Geun; Kim, Bong Kyu

    2015-05-25

    We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.

  12. Designing Organic Phosphine Oxide Host Materials Using Heteroaromatic Building Blocks: Inductive Effects on Electroluminescence

    SciTech Connect

    Sapochak, Linda S.; Padmaperuma, Asanga B.; Vecchi, Paul A.; Cai, Xiuyu; Burrows, Paul E.

    2007-11-19

    Phosphine oxide substitution of small molecules with high triplet exciton energies allows development of vacuum sublimable, electron transporting host materials for blue OLEDs. Heteroaromatic building blocks (carbazole, dibenzofuran and dibenzothiophene) with ET ~ 3 eV were incorporated into phosphine oxide (PO) structures. External quantum efficiencies (EQEs) at lighting brightness (i.e., 800 cd/m2) reached as high as 9.8% at 5.2V for OLEDs using the heteroaromatic PO hosts doped with the sky blue phosphor, iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N,C2’) picolinate (FIrpic). Comparing device properties at a similar current density (i.e., J = 13 mA/cm2) showed the dibenzothiophene-bridged PO compound exhibits the highest EQEs and lowest operating voltages at all phosphor dopant levels. These results are explained with respect to the effects of the inductive phosphine oxide substituents on electrochemical, photophysical and electroluminescence properties of the substituted heteroaromatic building blocks.

  13. Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

    NASA Astrophysics Data System (ADS)

    Huh, Chul; Kim, Tae-Youb; Ahn, Chang-Geun; Kim, Bong Kyu

    2015-05-01

    We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiNx) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiNx film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiNx film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.

  14. Light emitting ceramic device and method for fabricating the same

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  15. A quantum optical firewall based on simple quantum devices

    NASA Astrophysics Data System (ADS)

    Amellal, H.; Meslouhi, A.; Hassouni, Y.; El Baz, M.

    2015-07-01

    In order to enhance the transmission security in quantum communications via coherent states, we propose a quantum optical firewall device to protect a quantum cryptosystem against eavesdropping through optical attack strategies. Similar to the classical model of the firewall, the proposed device gives legitimate users the possibility of filtering, controlling (input/output states) and making a decision (access or deny) concerning the traveling states. To prove the security and efficiency of the suggested optical firewall, we analyze its performances against the family of intercept and resend attacks, especially against one of the most prominent attack schemes known as "Faked State Attack."

  16. Microfluidic paper-based devices for bioanalytical applications.

    PubMed

    Santhiago, Murilo; Nery, Emilia W; Santos, Glauco P; Kubota, Lauro T

    2014-01-01

    Paper has become increasingly recognized as a very interesting substrate for the construction of microfluidic devices, with potential application in a variety of areas, including health diagnosis, environmental monitoring, immunoassays and food safety. The aim of this review is to present a short history of analytical systems constructed from paper, summarize the main advantages and disadvantages of fabrication techniques, exploit alternative methods of detection such as colorimetric, electrochemical, photoelectrochemical, chemiluminescence and electrochemiluminescence, as well as to take a closer look at the novel achievements in the field of bioanalysis published during the last 2 years. Finally, the future trends for production of such devices are discussed. PMID:24341497

  17. Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies

    SciTech Connect

    Crooker, S. A.; Kelley, M. R.; Martinez, N. J. D.; Nie, W.; Mohite, A.; Nayyar, I. H.; Tretiak, S.; Smith, D. L.; Liu, F.; Ruden, P. P.

    2014-10-13

    We use spectrally resolved magneto-electroluminescence (EL) measurements to study the energy dependence of hyperfine interactions between polaron and nuclear spins in organic light-emitting diodes. Using layered devices that generate bright exciplex emission, we show that the increase in EL emission intensity I due to small applied magnetic fields of order 100 mT is markedly larger at the high-energy blue end of the EL spectrum (ΔI/I ∼ 11%) than at the low-energy red end (∼4%). Concurrently, the widths of the magneto-EL curves increase monotonically from blue to red, revealing an increasing hyperfine coupling between polarons and nuclei and directly providing insight into the energy-dependent spatial extent and localization of polarons.

  18. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup −}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  19. Remarkable improvement in electroluminescence benefited from appropriate electron injection and transporting in ultraviolet organic light-emitting diode

    NASA Astrophysics Data System (ADS)

    You, Fengjiao; Mo, Bingjie; Liu, Liming; Wang, Honghang; Bin Wei; Xu, Jiwen; Zhang, Xiaowen

    2016-08-01

    Suitable thickness of LiF and 4,7-diphenyl-1, 10-phenanthroline with slightly weakened electron injection and transporting is proposed to match the intractable hole injection capacity in ultraviolet organic light-emitting diode (UV OLED). By using this strategy, the device performance is remarkably improved. With 4,4‧-bis(carbazol-9-yl)biphenyl (CBP) and 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ) as emitters, the UV OLED shows maximum radiance of 5.8 mW/cm2 and external quantum efficiency of 2.1% with emission peak of ~380 nm predominantly from TAZ and noticeable shoulder emission of ~410 nm from CBP. The retarded electron injection and transporting contribute to optimizing hole-electron recombination zone and balance within the emitting layers, which accounts for the improved electroluminescent intensity. The detailed mechanism is further clarified with impedance spectroscopy.

  20. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

    SciTech Connect

    Brazzini, Tommaso Sun, Huarui; Uren, Michael J.; Kuball, Martin; Casbon, Michael A.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Hervé

    2015-05-25

    Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

  1. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons

    PubMed Central

    Huang, Kai; Gao, Na; Wang, Chunzi; Chen, Xue; Li, Jinchai; Li, Shuping; Yang, Xu; Kang, Junyong

    2014-01-01

    We report localised-surface-plasmon (LSP) enhanced deep-ultraviolet light-emitting diodes (deep-UV LEDs) using Al nanoparticles for LSP coupling. Polygonal Al nanoparticles were fabricated on the top surfaces of the deep-UV LEDs using the oblique-angle deposition method. Both the top- and bottom-emission electroluminescence of deep-UV LEDs with 279 nm multiple-quantum-well emissions can be effectively enhanced by the coupling with the LSP generated in the Al nanoparticles. The primary bottom-emission wavelength is longer than the primary top-emission wavelength. This difference in wavelength can be attributed to the substrate-induced Fano resonance effect. For resonance modes with shorter wavelengths, the radiation fraction directed back into the LEDs is largest in the direction that is nearly parallel to the surface of the device and results in total reflection and re-absorption in the LEDs. PMID:24625660

  2. Design concept study for Cerenkov monitoring devices based upon CCD technology

    SciTech Connect

    Partin, J.K.

    1997-07-01

    A design concept study for the development of Cerenkov monitoring devices based upon Charge-Coupled Device (CCD) technology is presented. The study provides a description of the technology and the features which characterize the performance of specific devices. Capabilities of commercially-available CCD systems are reviewed and tradeoffs between the various system attributes are examined for two different monitoring scenarios: one in which the device is designed to be transportable for use by a visiting inspector; and one in which the device is mounted in the ceiling, or other fixed position, and the data is transmitted to off-site locations for evaluation.

  3. SEMICONDUCTOR DEVICES: A new integrated SOI power device based on self-isolation technology

    NASA Astrophysics Data System (ADS)

    Huanmei, Gao; Xiaorong, Luo; Wei, Zhang; Hao, Deng; Tianfei, Lei

    2010-08-01

    A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

  4. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    SciTech Connect

    Malysheva, E. I. Dorokhin, M. V.; Ved’, M. V.; Kudrin, A. V.; Zdoroveishchev, A. V.

    2015-11-15

    The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n{sup +}-GaAs/GaMnAs and InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb heterostructures.

  5. Molecular gels-based controlled release devices for pheromones

    Technology Transfer Automated Retrieval System (TEKTRAN)

    2-Heptanone is a volatile solvent that is effective in controlling parasitic mites (Varroa) in honeybee. Controlled-release of 2-heptanone is needed to avoid overdosing, minimize chemical usage, and provide a sustained release over a several week period. Control-release devices comprised of a reserv...

  6. Nanotechnology Based Materials and Devices for Health Care

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepaka; Cho, K.; Brenner, Don; Menon, Madhu; Andriotis, Antonis; Sagman, Uri; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    This viewgraph presentation provides information on trends in NASA nanotechnology research and development, and future biotechnological applications for that nanotechnology. The presentation covers nanoelectronics, nanosensors, and nanomaterials, biomimetics, devices and materials for health care, carbon nanotubes, biosensors for astrobiology, solid-state nanopores for DNA sequencing, and protein nanotubes.

  7. Night vision devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Habercom, G. E., Jr.

    1980-08-01

    This bibliography contains 323 citations in which various types of night vision devices are investigated. Most were developed for military applications but they can readily be adapted for civil usage, as for example, law enforcement. Abstracts on display screens, equipment design and effectiveness, electronic components, spurious noise reduction, and test methods are cited.

  8. Adhesive-based bonding technique for PDMS microfluidic devices.

    PubMed

    Thompson, C Shea; Abate, Adam R

    2013-02-21

    We present a simple and inexpensive technique for bonding PDMS microfluidic devices. The technique uses only adhesive tape and an oven; plasma bonders and cleanroom facilities are not required. It also produces channels that are immediately hydrophobic, allowing formation of aqueous-in-oil emulsions.

  9. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  10. Superlattice-based quantum devices: from theory to practical applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.

    2014-07-01

    The concepts of resonant tunneling and superlattices were first developed by Esaki and Tsu. What started with the new physics of the Esaki tunnel diode has matured into nanoscale engineering of semiconductors superlattices to create whole synthetic band structures. While working at Thomson CSF in France, Manijeh Razeghi went on to develop the metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy growth of superlattice material as reported in my seminal volumes of The MOCVD Challenge. After years of considerable effort to bring this technology to maturity, we now see the results of this formidable new science in almost every electronic and photonic device that we encounter. Among the most successful triumphs are the type-II superlattice photodetectors and quantum cascade lasers - these technologies have demonstrated the beauty of turning fundamental concepts into practical devices, thanks to advanced growth technologies. This enables us to design and realize compact devices capable of mimicking or even exceeding nature. Using superlattice to pioneer the development of quantum systems is driving the research work at the Center for Quantum Devices.

  11. Flexible and Transparent Field Emission Devices based on Graphene-Nanowire Hybrid Structures

    NASA Astrophysics Data System (ADS)

    Arif, Muhammad; Heo, Kwang; Lee, Byung Yang; Seo, David H.; Seo, Sunae; Jian, Jikang; Hong, Seunghun

    2011-03-01

    Recent developments in wafer scale synthesis and transfer of graphene have made it possible to fabricate electrodes for versatile flexible devices. However, a flexible and transparent graphene-based field emission device has not been explored yet. Herein, we report the fabrication of flexible and transparent field emission devices based on graphene-nanowire hybrid structures. In this work, we successfully grew vertically-aligned Au nanowires on graphene surface using an electrochemical method and utilized it as a cathode. We also utilized a graphene electrode for an anode resulting in a transparent and flexible field emission device. Our field emission devices can be bent down to 22 mm radius of curvature without any significant change in its field emission currents. This flexible and transparent field emission device based on graphene-nanowire hybrid structures will utilized for various applications such as field emission displays, x-ray tubes, and pressure sensors.

  12. SEMICONDUCTOR DEVICES Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures

    NASA Astrophysics Data System (ADS)

    Yanhu, Chen; Huajun, Shen; Xinyu, Liu; Hui, Xu; Ling, Li; Huijun, Li

    2010-10-01

    The thermal and electro stability of multi-finger heterojunction bipolar transistors (HBTs) with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-IV test and thermal resistance calculation. Their electro stability was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.

  13. GPU-based Parallel Application Design for Emerging Mobile Devices

    NASA Astrophysics Data System (ADS)

    Gupta, Kshitij

    A revolution is underway in the computing world that is causing a fundamental paradigm shift in device capabilities and form-factor, with a move from well-established legacy desktop/laptop computers to mobile devices in varying sizes and shapes. Amongst all the tasks these devices must support, graphics has emerged as the 'killer app' for providing a fluid user interface and high-fidelity game rendering, effectively making the graphics processor (GPU) one of the key components in (present and future) mobile systems. By utilizing the GPU as a general-purpose parallel processor, this dissertation explores the GPU computing design space from an applications standpoint, in the mobile context, by focusing on key challenges presented by these devices---limited compute, memory bandwidth, and stringent power consumption requirements---while improving the overall application efficiency of the increasingly important speech recognition workload for mobile user interaction. We broadly partition trends in GPU computing into four major categories. We analyze hardware and programming model limitations in current-generation GPUs and detail an alternate programming style called Persistent Threads, identify four use case patterns, and propose minimal modifications that would be required for extending native support. We show how by manually extracting data locality and altering the speech recognition pipeline, we are able to achieve significant savings in memory bandwidth while simultaneously reducing the compute burden on GPU-like parallel processors. As we foresee GPU computing to evolve from its current 'co-processor' model into an independent 'applications processor' that is capable of executing complex work independently, we create an alternate application framework that enables the GPU to handle all control-flow dependencies autonomously at run-time while minimizing host involvement to just issuing commands, that facilitates an efficient application implementation. Finally, as

  14. Shock Wave Based Biolistic Device for DNA and Drug Delivery

    NASA Astrophysics Data System (ADS)

    Nakada, Mutsumi; Menezes, Viren; Kanno, Akira; Hosseini, S. Hamid R.; Takayama, Kazuyoshi

    2008-03-01

    A shock wave assisted biolistic (biological ballistic) device has been developed to deliver DNA/drug-coated micro-projectiles into soft living targets. The device consists of an Nd:YAG laser, an optical setup to focus the laser beam and, a thin aluminum (Al) foil (typically 100 µm thick) which is a launch pad for the micro-projectiles. The DNA/drug-coated micro-particles to be delivered are deposited on the anterior surface of the foil and the posterior surface of the foil is ablated using the laser beam with an energy density of about 32×109 W/cm2. The ablation launches a shock wave through the foil that imparts an impulse to the foil surface, due to which the deposited particles accelerate and acquire sufficient momentum to penetrate soft targets. The device has been tested for particle delivery by delivering 1 µm size tungsten particles into liver tissues of experimental rats and in vitro test models made of gelatin. The penetration depths of about 90 and 800 µm have been observed in the liver and gelatin targets, respectively. The device has been tested for in vivo DNA [encoding β-glucuronidase (GUS) gene] transfer by delivering plasmid DNA-coated, 1-µm size gold (Au) particles into onion scale, tobacco leaf and soybean seed cells. The GUS activity was detected in the onion, tobacco and soybean cells after the DNA delivery. The present device is totally non-intrusive in nature and has a potential to get miniaturized to suit the existing medical procedures for DNA and/or drug delivery.

  15. Enhanced spin signal in nonlocal devices based on a ferromagnetic CoFeAl alloy

    NASA Astrophysics Data System (ADS)

    Bridoux, G.; Costache, M. V.; Van de Vondel, J.; Neumann, I.; Valenzuela, S. O.

    2011-09-01

    We systematically study the nonlocal spin signal in lateral spin valves based on CoFeAl injectors and detectors and compare the results with identically fabricated devices based on CoFe. The devices are fabricated by electron beam evaporation at room temperature. We observe a > 10-fold enhancement of the spin signal in the CoFeAl devices. We explain this increase as due to the formation of a highly spin-polarized Co2FeAl Heusler compound with large resistivity. These results suggest that Heusler compounds are promising candidates as spin polarized electrodes in lateral spin devices for future spintronic applications.

  16. Strong electroluminescence from SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} mixed layers fabricated by atomic layer deposition

    SciTech Connect

    Rebohle, L. Braun, M.; Wutzler, R.; Helm, M.; Skorupa, W.; Liu, B.; Sun, J. M.

    2014-06-23

    We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15% of SiO{sub 2}-Tb{sub 2}O{sub 3}-mixed layers fabricated by atomic layer deposition and partly co-doped with Al{sub 2}O{sub 3}. The electrical, EL, and breakdown behavior is investigated as a function of the Tb and the Al concentration. Special attention has been paid to the beneficial role of Al{sub 2}O{sub 3} co-doping which improves important device parameters. In detail, it increases the maximum EL power efficiency and EL decay time, it nearly doubles the fraction of excitable Tb{sup 3+} ions, it shifts the region of high EL power efficiencies to higher injection currents, and it reduces the EL quenching over the device lifetime by an approximate factor of two. It is assumed that the presence of Al{sub 2}O{sub 3} interferes the formation of Tb clusters and related defects. Therefore, the system SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} represents a promising alternative for integrated, Si-based light emitters.

  17. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

    PubMed

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-12-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges. PMID:27541816

  18. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  19. Experimental study of blast mitigating devices based on combined construction

    NASA Astrophysics Data System (ADS)

    Takayama, K.; Silnikov, M. V.; Chernyshov, M. V.

    2016-09-01

    A robust blast inhibiting bin is the most often used device for damage blast effects suppression. In particular, a top open cylindrical bin significantly reduces a fragmentation effect resulted from a detonation of an explosive device placed inside the bin. However, reduction of blast wave overpressure and impulse by such cylindrical bins is not sufficient [1]. A reasonable alternative to endless increase of height and thickness of robust blast inhibiting bins is a development of destructible inhibitors having no solid elements in their structure and, therefore, excluding secondary fragmentation. So, the family of "Fountain" inhibitors [2,3] localizes and suppresses damaging blast effects due to multiphase working system. The present study is analyzing data obtained in testing of prototypes of new combined inhibitors. Their structure combines robust elements (bottoms, side surfaces) with elements responsible for blast loads reduction due to multi-phase working system (top and low transverse embeddings) and fairings impeding wave propagation in undesirable directions.

  20. Pure spin current devices based on ferromagnetic topological insulators

    PubMed Central

    Götte, Matthias; Joppe, Michael; Dahm, Thomas

    2016-01-01

    Two-dimensional topological insulators possess two counter propagating edge channels with opposite spin direction. Recent experimental progress allowed to create ferromagnetic topological insulators realizing a quantum anomalous Hall (QAH) state. In the QAH state one of the two edge channels disappears due to the strong ferromagnetic exchange field. We investigate heterostructures of topological insulators and ferromagnetic topological insulators by means of numerical transport calculations. We show that spin current flow in such heterostructures can be controlled with high fidelity. Specifically, we propose spintronic devices that are capable of creating, switching and detecting pure spin currents using the same technology. In these devices electrical currents are directly converted into spin currents, allowing a high conversion efficiency. Energy independent transport properties in combination with large bulk gaps in some topological insulator materials may allow operation even at room temperature. PMID:27782187

  1. InSb-based tunable terahertz directional beaming device

    NASA Astrophysics Data System (ADS)

    Gu, Wenhao; Chang, Shengjiang; Fan, Fei; Zhang, Na; Zhang, Xuanzhou

    2016-10-01

    A single-side InSb-dielectric surface grating structure has been proposed to realize active tunable terahertz directional beaming. In consideration of the magneto-optical property of InSb, the influences of applied magnetic field as well as environmental temperature on directional beaming characteristics of our proposed device have been numerically simulated. Simulation results indicate that the deflection angle increases with the increment of temperature while it tends to decrease as applied magnetic field intensity increases, therefore tunable directional beaming could be achieved within the terahertz frequency range. For the respective environmental temperature and applied magnetic field intensity of 220 K and 0.6 T, the deflection angle could reach 45.5° at 0.65 THz. Moreover, under the same temperature and magnetic field, the deflection angles are different for the incident waves with different frequencies, which indicates that the proposed device could serve as an ideal THz beam splitter.

  2. Microcontroller-based portable device for seeds moisture measurements

    NASA Astrophysics Data System (ADS)

    Iwaszko, Roman; Tarapata, Grzegorz; Weremczuk, Jerzy

    2006-10-01

    The paper describes construction of a new specialized hygrometer and dedicated applications for data acquisition and analyzing that can be used for seeds moisture measurements. To find the correlation between seeds water content and measurements results obtained from the device the weight method was applied. This paper shows preliminary results from tests of fully functional system allowing estimation in a very easy end fast way of the water content in germinating seeds without seeds destruction.

  3. A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

    NASA Astrophysics Data System (ADS)

    Gao, Li-ping; Wei, Jian; Wang, Yue-chuan; Ding, Guo-jing; Yang, Yu-lin

    2012-08-01

    New optical writing and electrical erasing devices have been successfully fabricated that exploit the photochromism and electrochromism of viologen. In a preliminary study, both the structures of viologen and device were investigated in detail by UV-vis spectra in order to confirm their effects on the optical writing and electrical erasing performances of corresponding devices. For sandwiched, single and complementary devices based on benzyl viologen (BV 2+), only optical writing can be performed, not electrical erasing operations, which indicated these devices cannot realize optical information rewriting. For single and complementary devices based on styrene-functional viologen (V BV 2+) and acrylic-functional viologen (ACV 2+), optical writing and electrical erasing operations can be reversibly performed and optical information rewriting realized. It is clear that single devices based on V BV2+ and ACV2+ possess better performance accompanied with contrast without significant degradation and bleaching times and without significant deterioration over 10 repeated writing/erasing cycles. Furthermore, we put forward possible mechanisms for sandwiched, single and complementary devices based on V BV2+ and ACV2+ for the optical writing and electrical erasing operations. This study provides a new strategy to design optical writing and electrical erasing devices to realize optical information rewriting.

  4. New generation of high-efficiency optoelectronic devices and systems for transportation: infrastructure equipment

    NASA Astrophysics Data System (ADS)

    Adonin, Alexej S.; Ermakov, Oleg N.

    2002-04-01

    Review is presented for optoelectronic products market present state and global development trends. The steady positive dynamics of optoelectronic products market is noted. Presented economical data reveal the large capacity of optoelectronics market and hard competition between leading manufacturers of optoelectronic products. The clear trend is emphasized for applications range widening of optoelectronic devices and their based systems, this trend being caused by radical progress in new high-efficiency optoelectronic materials synthesis and their based bulk and quantum - confined heterostructures. Different applications of optoelectronic devices and systems in transportation infrastructure are considered. Company R&D program is briefly reviewed, including silicon - on - sapphire (SOS) technology, direct deposition technology of A3 B5 and A2 B6 compounds on Si and sapphire, microporous Si and electroluminescent polymers technologies.

  5. Fabrication of polyimide based microfluidic channels for biosensor devices

    NASA Astrophysics Data System (ADS)

    Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2015-03-01

    The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabrication of the often needed microfluidic channels, have limitations in terms of their physicochemical properties. Therefore, the use of a multipurpose biocompatible material with better resistance to the chemical, thermal and electrical environment, along with capability of forming closed channel microfluidics is inevitable. This paper demonstrates a novel technique of fabricating microfluidic devices using polyimide (PI) which fulfills the aforementioned properties criteria. A fabrication process to pattern microfluidic channels, using partially cured PI, has been developed by using a dry etching method. The etching parameters are optimized and compared to those used for fully cured PI. Moreover, the formation of closed microfluidic channel on wafer level by bonding two partially cured PI layers or a partially cured PI to glass with high bond strength has been demonstrated. The reproducibility in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics.

  6. Analysis of degradation mechanisms in donor-acceptor copolymer based organic photovoltaic devices using impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Srivastava, S. B.; Sonar, P.; Singh, S. P.

    2016-09-01

    The stability of organic photovoltaic (OPV) devices in ambient conditions has been a serious issue which needs to be addressed and resolved timely. In order to probe the degradation mechanism in a donor-acceptor polymer PDPP-TNT: PC71BM bulk heterojunction based OPV devices, we have studied current density-voltage (J-V) behavior and impedance spectroscopy of fresh and aged devices. The current-voltage characteristic of optimized fresh devices exhibit a short circuit current density (J sc) of 8.9 mA cm-2, open circuit voltage (V oc) of 0.79 V, fill factor (FF) of 54.6%, and power conversion efficiency (PCE) of 3.8%. For aged devices, J sc, V oc, FF, and PCE were reduced to 57.3%, 89.8%, 44.3% and 23.7% of its initial value, respectively. The impedance spectra measured under illumination for these devices were successfully fitted using a CPE-based circuit model. For aged devices, the low-frequency response in impedance spectra suggests an accumulation of the photo-generated charge carriers at the interfaces which leads to a significant lowering in fill factor. Such degradation in device performance is attributed to the incorporation of oxygen and water molecules in devices. An increase in the recombination resistance indicates a deterioration of free charge carrier generation and conduction in devices.

  7. Novel Nanoelectronic Device Applications Based on the Nonlinearity of Three-Terminal Ballistic Junctions

    NASA Astrophysics Data System (ADS)

    Sun, Jie; Wallin, D.; Brusheim, P.; Maximov, I.; Wang, Z. G.; Xu, H. Q.

    2007-04-01

    Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.

  8. Integration of Multiple Components in Polystyrene-based Microfluidic Devices Part 1: Fabrication and Characterization

    PubMed Central

    Johnson, Alicia S.; Anderson, Kari B.; Halpin, Stephen T.; Kirkpatrick, Douglas C.; Spence, Dana M.; Martin, R. Scott

    2012-01-01

    In Part I of a two-part series, we describe a simple, and inexpensive approach to fabricate polystyrene devices that is based upon melting polystyrene (from either a Petri dish or powder form) against PDMS molds or around electrode materials. The ability to incorporate microchannels in polystyrene and integrate the resulting device with standard laboratory equipment such as an optical plate reader for analyte readout and micropipettors for fluid propulsion is first described. A simple approach for sample and reagent delivery to the device channels using a standard, multi-channel micropipette and a PDMS-based injection block is detailed. Integration of the microfluidic device with these off-chip functions (sample delivery and readout) enables high throughput screens and analyses. An approach to fabricate polystyrene-based devices with embedded electrodes is also demonstrated, thereby enabling the integration of microchip electrophoresis with electrochemical detection through the use of a palladium electrode (for a decoupler) and carbon-fiber bundle (for detection). The device was sealed against a PDMS-based microchannel and used for the electrophoretic separation and amperometric detection of dopamine, epinephrine, catechol, and 3,4-dihydroxyphenylacetic acid. Finally, these devices were compared against PDMS-based microchips in terms of their optical transparency and absorption of an anti-platelet drug, clopidogrel. Part I of this series lays the foundation for Part II, where these devices were utilized for various on-chip cellular analysis. PMID:23120747

  9. Synthesis and spectroscopic study of highly fluorescent β-enaminone based boron complexes.

    PubMed

    Kumbhar, Haribhau S; Gadilohar, Balu L; Shankarling, Ganapati S

    2015-07-01

    The newly synthesized 1, 1, 2-trimethyl-1H benzo[e]indoline based β-enaminone boron complexes exhibited the intense fluorescence (Fmax=522-547 nm) in solution as well as in solid state (F max=570-586 nm). These complexes exhibited large stoke shift, excellent thermal and photo stability when compared to the boron dipyrromethene (BODIPY) colorants. Optimized geometry and orbital distribution in ground states were computed by employing density functional theory (DFT). The cyclic voltammetry study revealed the better electron transport ability of these molecules than current electroluminescent materials like tris(8-hydroxyquinoli-nato)-aluminium (Alq3) and BODIPY, which can find application in electroluminescent devices. PMID:25813165

  10. Holographic optical traps for atom-based topological Kondo devices

    NASA Astrophysics Data System (ADS)

    Buccheri, F.; Bruce, G. D.; Trombettoni, A.; Cassettari, D.; Babujian, H.; Korepin, V. E.; Sodano, P.

    2016-07-01

    The topological Kondo (TK) model has been proposed in solid-state quantum devices as a way to realize non-Fermi liquid behaviors in a controllable setting. Another motivation behind the TK model proposal is the demand to demonstrate the quantum dynamical properties of Majorana fermions, which are at the heart of their potential use in topological quantum computation. Here we consider a junction of crossed Tonks-Girardeau gases arranged in a star-geometry (forming a Y-junction), and we perform a theoretical analysis of this system showing that it provides a physical realization of the TK model in the realm of cold atom systems. Using computer-generated holography, we experimentally implement a Y-junction suitable for atom trapping, with controllable and independent parameters. The junction and the transverse size of the atom waveguides are of the order of 5 μm, leading to favorable estimates for the Kondo temperature and for the coupling across the junction. Since our results show that all the required theoretical and experimental ingredients are available, this provides the demonstration of an ultracold atom device that may in principle exhibit the TK effect.

  11. Holographic optical traps for atom-based topological Kondo devices

    NASA Astrophysics Data System (ADS)

    Buccheri, F.; Bruce, G. D.; Trombettoni, A.; Cassettari, D.; Babujian, H.; Korepin, V. E.; Sodano, P.

    2016-07-01

    The topological Kondo (TK) model has been proposed in solid-state quantum devices as a way to realize non-Fermi liquid behaviors in a controllable setting. Another motivation behind the TK model proposal is the demand to demonstrate the quantum dynamical properties of Majorana fermions, which are at the heart of their potential use in topological quantum computation. Here we consider a junction of crossed Tonks–Girardeau gases arranged in a star-geometry (forming a Y-junction), and we perform a theoretical analysis of this system showing that it provides a physical realization of the TK model in the realm of cold atom systems. Using computer-generated holography, we experimentally implement a Y-junction suitable for atom trapping, with controllable and independent parameters. The junction and the transverse size of the atom waveguides are of the order of 5 μm, leading to favorable estimates for the Kondo temperature and for the coupling across the junction. Since our results show that all the required theoretical and experimental ingredients are available, this provides the demonstration of an ultracold atom device that may in principle exhibit the TK effect.

  12. Cost Effective Paper-Based Colorimetric Microfluidic Devices and Mobile Phone Camera Readers for the Classroom

    ERIC Educational Resources Information Center

    Koesdjojo, Myra T.; Pengpumkiat, Sumate; Wu, Yuanyuan; Boonloed, Anukul; Huynh, Daniel; Remcho, Thomas P.; Remcho, Vincent T.

    2015-01-01

    We have developed a simple and direct method to fabricate paper-based microfluidic devices that can be used for a wide range of colorimetric assay applications. With these devices, assays can be performed within minutes to allow for quantitative colorimetric analysis by use of a widely accessible iPhone camera and an RGB color reader application…

  13. Function principle of a relaxation oscillator based on a bistable quantum Hall device

    NASA Astrophysics Data System (ADS)

    Nachtwei, G.; Kalugin, N. G.; Saǧol, B. E.; Stellmach, Ch.; Hein, G.

    2003-03-01

    We present a simple relaxation oscillator based on a quantum Hall device with Corbino geometry near the breakdown of the quantum Hall effect. In the hysteresis region of the breakdown, the quantum Hall device exhibits bistable behavior. If a resistance is connected in series and a capacitor in parallel to the quantum Hall device, the bistable switching leads to subsequent charging and discharging of the capacitor, detectable as relaxation oscillations. We explain the observed oscillations by solving Kirchhoff's equations and obtain a good quantitative description of the experiment. From this, we deduce some dynamical parameters of the Corbino device and discuss the performance limits of the oscillator.

  14. Investigation of three-terminal organic-based devices with memory effect and negative differential resistance

    NASA Astrophysics Data System (ADS)

    Yu, Li-Zhen; Lee, Ching-Ting

    2009-09-01

    The current-voltage characteristics of the gate-controlled three-terminal organic-based devices with memory effect and negative differential resistances (NDR) were studied. Gold and 9,10-di(2-naphthyl)anthracene (ADN) were used as the metal electrode and active channel layer of the devices, respectively. By using various gate-source voltages, the memory and NDR characteristics of the devices can be modulated. The memory and NDR characteristics of the devices were attributed to the formation of trapping sites in the interface between Au electrode and ADN active layer caused by the defects, when Au metal deposited on the ADN active layer.

  15. Three-dimensional, paper-based microfluidic devices containing internal timers for running time-based diagnostic assays.

    PubMed

    Phillips, Scott T; Thom, Nicole K

    2013-01-01

    This chapter describes a method for fabricating three-dimensional (3D), paper-based microfluidic devices that contain internal timers for running quantitative, time-based assays. The method involves patterning microfluidic channels into paper, and cutting double-sided adhesive tape into defined patterns. Patterned paper and tape are assembled layer by layer to create 3D microfluidic devices that are capable of distributing microliter volumes of a sample into multiple regions on a device for conducting multiple assays simultaneously. Paraffin wax is incorporated into defined regions within the device to provide control over the distribution rate of a sample, and food coloring is included in defined regions within the device to provide an unambiguous readout when the sample has reached the bottom of the device (this latter feature is the endpoint of the timer).

  16. A Nanoscale, Liquid-Phase DNA Separation Device Based on Brownian Ratchets

    NASA Astrophysics Data System (ADS)

    Bader, Joel S.

    1998-03-01

    Realizing the goals of the Human Genome Project depends on the ability to perform size-based separations of DNA molecules. DNA analysis has traditionally required inconvenient gel-based electrophoretic separations. We describe a novel, micromachined, non-electrophoretic device suitable for lab-on-a-chip applications. The device is designed to transport DNA using an asymmetric, periodic potential to rectify Brownian motion. The separation occurs in a homogeneous liquid, avoiding the use of gels or other special media. Experimental results from a working prototype NanoNiagara device validate theoretical predictions of its ability to transport DNA molecules based on size.

  17. High-temperature 434 Mhz surface acoustic wave devices based on GaPO4.

    PubMed

    Hamidon, Mohd Nizar; Skarda, Vlad; White, Neil M; Krispel, Ferdinand; Krempl, Peter; Binhack, Michael; Buff, Werner

    2006-12-01

    Research into surface acoustic wave (SAW) devices began in the early 1970s and led to the development of high performance, small size, and high reproducibility devices. Much research has now been done on the application of such devices to consumer electronics, process monitoring, and communication systems. The use of novel materials, such as gallium phosphate (GaPO4), extends the operating temperature of the elements. SAW devices based on this material operating at 434 MHz and up 800 degrees C, can be used for passive wireless sensor applications. Interdigital transducer (IDT) devices with platinum/zirconium metallization and 1.4 microm finger-gap ratio of 1:1 have been fabricated using direct write e-beam lithography and a lift-off process. The performance and long-term stability of these devices has been studied, and the results are reported in this paper. PMID:17186928

  18. Device and architecture co-design for ultra-low power logic using emerging tunneling-based devices

    NASA Astrophysics Data System (ADS)

    Saripalli, Vinay

    The scaling of silicon CMOS, by delivering lower switching-energy transistors with each technology generation, has been the driving force behind total circuit-energy reduction during the past three decades. However, during the past decade it has become increasingly challenging to achieve energy efficiency through scaling of conventional silicon CMOS. One of the key reasons that has caused this energy scaling challenge is the slowdown in VCC scaling, due to non-scalability of VT. The other reason is the steady increase in leakage power consumption with each technology generation due to worsening short channel effects. As the development of sub-22nm CMOS devices is currently underway, alternative transistor-architectures such as 3D tri-gate, and alternative novel semiconductor material systems such as III-V InGaAs (indium galium arsenide) are being considered to allow both continued feature size scaling as well as VCC scaling. However, some of these emerging transistors have unique properties which require conventional circuit and system design to be re-examined. In this context, co-design of novel devices and architecture, which is the topic of this dissertation, enables the drive toward continued energy reduction. In this dissertation, circuit and architecture-level design aspects for emerging low-VCC devices, such as the Single Electron Transistor (SET) and the Inter-band Tunneling Field Effect Transistor (TFET), are examined. The energy-delay characteristics of low-VCC sub-300mV logic circuits based on nearly broken-gap GaSb-InAs (galium antimonide-indium arsenide) heterojunction TFETs, are modeled. By taking advantage of an energy-delay crossover behavior between silicon CMOS and heterojunction TFET logic circuits, a hybrid heterogeneous CMOS-TFET multi-core processor architecture is proposed. Simulated execution of several single and multi-threaded benchmark programs on this heterogeneous architecture shows significant energy-delay advantages compared to either

  19. Dual-color electroluminescence from dot-in-bulk nanocrystals.

    PubMed

    Brovelli, Sergio; Bae, Wan Ki; Galland, Christophe; Giovanella, Umberto; Meinardi, Francesco; Klimov, Victor I

    2014-02-12

    The emission color from colloidal semiconductor nanocrystals (NCs) is usually tuned through control of particle size, while multicolor emission is obtained by mixing NCs of different sizes within an emissive layer. Here, we demonstrate that recently introduced "dot-in-bulk" (DiB) nanocrystals can emit two-color light under both optical excitation and electrical injection. We show that the effective emission color can be controlled by adjusting the relative amplitudes of the core and shell emission bands via the intensity of optical excitation or applied bias in the cases of photoluminescence (PL) and electroluminescence (EL), respectively. To investigate the role of nonradiative carrier losses due to trapping at intragap states, we incorporate DiB NCs into functional light-emitting diodes and study their PL as a function of applied bias below the EL excitation threshold. We show that voltage-dependent changes in core and shell emissions are not due to the applied electric field but rather arise from the transfer of charges between the anode and the NC intragap trap sites. The changes in the occupancy of trap states can be described in terms of the raising (lowering) of the Fermi level for reverse (direct) bias. We find that the applied voltage affects the overall PL intensity primarily via the electron-trapping channel while bias-induced changes in hole-trapping play a less significant role, limited to a weak effect on core emission. PMID:24328946

  20. Hugely enhanced electroluminescence from mesoporous ZnO particles

    NASA Astrophysics Data System (ADS)

    Ning, Guang-hui; Zhao, Xiao-peng; Li, Jia; Zhang, Chang-qing

    2006-03-01

    Using octadecylamine (ODA) and dodecylamine (DDA) as template, nanostructured porous ZnO particles were synthesized by sol-gel method. The results of experiments show that the density of ZnO processed with ODA, DDA and without template is 5.31, 5.37 and 5.42 cm2/g respectively. The surface analysis proves that the ZnO particles processed with ODA and DDA hold porous structure. Hugely enhanced electroluminescence (EL) was observed from the porous ZnO particles under direct current electric field from 2-4.66 V/μm. Comparing with the low emission intensity of the ZnO without porous structure, the emission intensity of the ZnO sample processed with DDA and DDA were enhanced 12 times and 20 times respectively at the voltage of 4.66 V/μm. The EL spectrum shows mainly broad peak emission feature with a peak at 556 nm. The threshold voltage is just 2 V/μm. The results indicate that the porous structure in ZnO particles can enhance EL intensity.

  1. Characteristics of electroluminescence phenomenon in virgin and thermally aged LDPE

    NASA Astrophysics Data System (ADS)

    Bani, N. A.; Abdul-Malek, Z.; Ahmad, H.; Muhammad-Sukki, F.; Mas'ud, A. A.

    2015-08-01

    High voltage cable requires a good insulating material such as low density polyethylene (LDPE) to be able to operate efficiently in high voltage stresses and high temperature environment. However, any polymeric material will experience degradation after prolonged application of high electrical stresses or other extreme conditions. The continuous degradation will shorten the life of a cable therefore further understanding on the behaviour of the aged high voltage cable needs to be undertaken. This may be observed through electroluminescence (EL) measurement. EL occurs when a solid-state material is subjected to a high electrical field stress and associated with the generation of charge carriers within the polymeric material and that these charges can be produced by injection, de-trapping and field-dissociation at the metal-polymer interface. The behaviour of EL emission can be affected by applied field, applied frequency, ageing time, ageing temperature and types of materials, among others. This paper focuses on the measurement of EL emission of additive-free LDPE thermally aged at different temperature subjected to varying electric stresses at 50Hz. It can be observed that EL emission increases as voltage applied is increased. However, EL emission decreases as ageing temperature is increased for varying applied voltage.

  2. Dual-color electroluminescence from dot-in-bulk nanocrystals.

    PubMed

    Brovelli, Sergio; Bae, Wan Ki; Galland, Christophe; Giovanella, Umberto; Meinardi, Francesco; Klimov, Victor I

    2014-02-12

    The emission color from colloidal semiconductor nanocrystals (NCs) is usually tuned through control of particle size, while multicolor emission is obtained by mixing NCs of different sizes within an emissive layer. Here, we demonstrate that recently introduced "dot-in-bulk" (DiB) nanocrystals can emit two-color light under both optical excitation and electrical injection. We show that the effective emission color can be controlled by adjusting the relative amplitudes of the core and shell emission bands via the intensity of optical excitation or applied bias in the cases of photoluminescence (PL) and electroluminescence (EL), respectively. To investigate the role of nonradiative carrier losses due to trapping at intragap states, we incorporate DiB NCs into functional light-emitting diodes and study their PL as a function of applied bias below the EL excitation threshold. We show that voltage-dependent changes in core and shell emissions are not due to the applied electric field but rather arise from the transfer of charges between the anode and the NC intragap trap sites. The changes in the occupancy of trap states can be described in terms of the raising (lowering) of the Fermi level for reverse (direct) bias. We find that the applied voltage affects the overall PL intensity primarily via the electron-trapping channel while bias-induced changes in hole-trapping play a less significant role, limited to a weak effect on core emission.

  3. Localized and guided electroluminescence from roll printed organic nanofibres

    NASA Astrophysics Data System (ADS)

    Tavares, L.; Kjelstrup-Hansen, J.; Rubahn, H.-G.

    2012-10-01

    Here, we report localized, polarized and waveguided electroluminescence (EL) from well aligned organic nanofibres integrated via roll printing on transistor platforms. The localized emission is due to the application of an alternating current voltage to the transistor gate electrodes, which causes sequential injection of holes and electrons into the organic material with subsequent charge carrier recombination and light emission from a small area near the metal-nanofibre interface. The polarization results from the mutually parallel ordering of the molecular constituents, in which the emitting dipole is oriented along the long molecular axis. Furthermore, their morphology enables the nanofibres to operate as optical waveguides and part of the generated light is therefore guided along the nanofibre and radiated at the nanofibre end. In addition to the ‘standard’ hexaphenylene nanofibres, we also demonstrate that this scheme can facilitate EL from a nanofibre made from a different type of molecule with altered spectral characteristics. The realization of an electrically biased organic nanoscale light-emitter demonstrates the ability to fabricate on-chip light sources with a tunable emission spectrum via synthesis of appropriate molecular building blocks.

  4. Medical devices; immunology and microbiology devices; classification of nucleic acid-based devices for the detection of Mycobacterium tuberculosis complex and the genetic mutations associated with antibiotic resistance. Final order.

    PubMed

    2014-10-22

    The Food and Drug Administration (FDA) is classifying nucleic acid-based in vitro diagnostic devices for the detection of Mycobacterium tuberculosis complex (MTB-complex) and the genetic mutations associated with MTB-complex antibiotic resistance in respiratory specimens devices into class II (special controls). The Agency is classifying the device into class II (special controls) because special controls, in addition to general controls, will provide a reasonable assurance of safety and effectiveness of the device.

  5. Methods and devices based on brillouin selective sideband amplification

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor)

    2003-01-01

    Opto-electronic devices and techniques using Brillouin scattering to select a sideband in a modulated optical carrier signal for amplification. Two lasers respectively provide a carrier signal beam and a Brillouin pump beam which are fed into an Brillouin optical medium in opposite directions. The relative frequency separation between the lasers is adjusted to align the frequency of the backscattered Brillouin signal with a desired sideband in the carrier signal to effect a Brillouin gain on the sideband. This effect can be used to implement photonic RF signal mixing and conversion with gain, conversion from phase modulation to amplitude modulation, photonic RF frequency multiplication, optical and RF pulse generation and manipulation, and frequency-locking of lasers.

  6. Conductivity-Based Detection Techniques in Nanofluidic Devices

    PubMed Central

    Harms, Zachary D.; Haywood, Daniel G.; Kneller, Andrew R.

    2016-01-01

    This review covers conductivity detection in fabricated nanochannels and nanopores. Improvements in nanoscale sensing are a direct result of advances in fabrication techniques, which produce devices with channels and pores with reproducible dimensions and in a variety of materials. Analytes of interest are detected by measuring changes in conductance as the analyte accumulates in the channel or passes transiently through the pore. These detection methods take advantage of phenomena enhanced at the nanoscale, such as ion current rectification, surface conductance, and dimensions comparable to the analytes of interest. The end result is the development of sensing technologies for a broad range of analytes, e.g., ions, small molecules, proteins, nucleic acids, and particles. PMID:25988434

  7. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOEpatents

    Hilbert, Claude; Martinis, John M.; Clarke, John

    1986-01-01

    A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

  8. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOEpatents

    Hilbert, C.; Martinis, J.M.; Clarke, J.

    1984-04-27

    A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

  9. Co-deposition methods for the fabrication of organic optoelectronic devices

    DOEpatents

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  10. Novel optical devices based on the tunable refractive index of magnetic fluid and their characteristics

    NASA Astrophysics Data System (ADS)

    Zhao, Yong; Zhang, Yuyan; Lv, Riqing; Wang, Qi

    2011-12-01

    As a new type of functional material, magnetic fluid (MF) is a stable colloid of magnetic nanoparticles, dressed with surfactant and dispersed in the carrier liquid uniformly. The MF has many unique optical properties, and the most important one is its tunable refractive index property. This paper summarizes the properties of the MF refractive index and the related optical devices. The refractive index can be easily controlled by external magnetic field, temperature, and so on. But the tunable refractive index of MF has a relaxation effect. As a result, the response time is more than milliseconds and the MF is only suitable for low speed environment. Compared with the traditional optical devices, the magnetic fluid based optical devices have the tuning ability. Compared with the tunable optical devices (the electro-optic devices (LiNbO3) of more than 10 GHz modulation speed, acoustic-optic devices (Ge) of more than 20 MHz modulation speed), the speed of the magnetic fluid based optical devices is low. Now there are many applications of magnetic fluid based on the refractive index in the field of optical information communication and sensing technology, such as tunable beam splitter, optical-fiber modulator, tunable optical gratings, tunable optical filter, optical logic device, tunable interferometer, and electromagnetic sensor. With the development of the research and application of magnetic fluid,a new method, structure and material to improve the response time can be found, which will play an important role in the fields of optical information communication and sensing technology.

  11. Copper(I) Complexes for Thermally Activated Delayed Fluorescence: From Photophysical to Device Properties.

    PubMed

    Leitl, Markus J; Zink, Daniel M; Schinabeck, Alexander; Baumann, Thomas; Volz, Daniel; Yersin, Hartmut

    2016-06-01

    Molecules that exhibit thermally activated delayed fluorescence (TADF) represent a very promising emitter class for application in electroluminescent devices since all electrically generated excitons can be transferred into light according to the singlet harvesting mechanism. Cu(I) compounds are an important class of TADF emitters. In this contribution, we want to give a deeper insight into the photophysical properties of this material class and demonstrate how the emission properties depend on molecular and host rigidity. Moreover, we show that with molecular optimization a significant improvement of selected emission properties can be achieved. From the discussed materials, we select one specific dinuclear complex, for which the two Cu(I) centers are four-fold bridged to fabricate an organic light emitting diode (OLED). This device shows the highest efficiency (of 23 % external quantum efficiency) reported so far for OLEDs based on Cu(I) emitters. PMID:27573265

  12. Flexible Graphene-based Energy Storage Devices for Space Application Project

    NASA Technical Reports Server (NTRS)

    Calle, Carlos I.

    2014-01-01

    Develop prototype graphene-based reversible energy storage devices that are flexible, thin, lightweight, durable, and that can be easily attached to spacesuits, rovers, landers, and equipment used in space.

  13. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOEpatents

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  14. Spirobifluorene and biphenylaminophenyl fluorene with dimesitylboron as multifunctional electroluminescent materials

    NASA Astrophysics Data System (ADS)

    Zhang, Wenguan; He, Zhiqun; Pang, Hui; Wang, Yongsheng; Zhao, Shengmin

    2015-12-01

    By introducing triarylamino and dimesitylboron groups into fluorene derivatives, two symmetric compounds 2,7-bis(dimesitylboryl)-9,9-spirobifluorene (SFMB) and 2,7-bis(dimesitylboryl)-9,9-bis(4-diphenylaminophenyl)fluorene (PAFMB) were prepared. SFMB and PAFMB exhibited solvatochromism in the different polarities of solvents. Devices A1, A2, A3 and A4 based on SFMB displayed emissions at 444, 448, 528, and 444 nm with current efficiencies of 1.06, 1.41, 0.84, and 1.52 cd/A, respectively. The blue light was close to the National Television Standards Committee standard blue color (x = 0.14, y = 0.08). Devices B1, B2, B3 and B4 based on PAFMB emitted lights centered at 484, 472, 513 and 472 nm, their current efficiencies were 1.80, 0.1, 1.23 and 1.93 cd/A, respectively. The results demonstrated that SFMB and PAFMB were multifunctional materials acted as emitters, and hole- and electron-transporting materials.

  15. A single-device universal logic gate based on a magnetically enhanced memristor.

    PubMed

    Prezioso, Mirko; Riminucci, Alberto; Graziosi, Patrizio; Bergenti, Ilaria; Rakshit, Rajib; Cecchini, Raimondo; Vianelli, Anna; Borgatti, Francesco; Haag, Norman; Willis, M; Drew, Alan J; Gillin, William P; Dediu, Valentin A

    2013-01-25

    Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.

  16. Protein-based biomemory device consisting of the cysteine-modified azurin

    NASA Astrophysics Data System (ADS)

    Choi, Jeong-Woo; Oh, Byung-Keun; Kim, Young Jun; Min, Junhong

    2007-12-01

    We demonstrated a protein-based memory device using recombinant Pseudomonas aeruginosa azurin (azurin), a metalloprotein with a redox property. Azurin was recombined with a cysteine residue to enhance the stability of the self-assembled protein on the gold surface. The memory device characteristics, including the "read," "write," and "erase" functions of the self-assembled azurin layer, were well demonstrated with three distinct electrical states of azurin layers by cyclic voltammetry. The robustness of the protein-based biomemory device was validated by the repeated electrochemical performance of 500000cycles.

  17. Fabrication of Optical Devices Based on Printable Photonics Technology and Its Application for Biosensor

    NASA Astrophysics Data System (ADS)

    Endo, Tatsuro; Okuda, Norimichi; Yanagida, Yasuko; Tanaka, Satoru; Hatsuzawa, Takeshi

    The specific optical characteristics which can be observed nanostructured optical device have great potentials for applying to several applications such as lifescience, optical communications, and data storage. Application of nanostrcutured optical device to industry, we suggest “printable photonics technology” for fabrication of nanostructured optical device based on nanoimprint lithography (NIL). In this study, using printable photonics technology, fabrication of flexible photonic crystal (PC) and its application for biosensor was performed. Using printable photonics technology-based PC for biosensing application, high sensitive detection of protein adsorption (detection limit: 1 pg/ml) could be detected.

  18. [Wearable Medical Devices' MCU Selection Analysis Based on the ARM Cortex-MO+ Architecture].

    PubMed

    Wu, Zaoquan; Liu, Mengxing; Qin, Liping; Ye, Shuming; Chen, Hang

    2015-03-01

    According to the characteristics of low cost, high performance, high integration and long battery life of wearable medical devices, the mainstream low-power microcontroller(MCU) series were compared, and came to the conclusion that the MCU series based on ARM Cortex-M0+ architecture were suitable for the development of wearable medical devices. In aspects of power consumption, operational performance, integrated peripherals and cost, the MCU series based on Cortex-M0+ architecture of primary semiconductor companies were compared, aimed at providing the guides of MCU selection for wearable medical devices.

  19. Electric current-producing device having sulfone-based electrolyte

    SciTech Connect

    Angell, Charles Austen; Sun, Xiao-Guang

    2010-11-16

    Electrolytic solvents and applications of such solvents including electric current-producing devices. For example, a solvent can include a sulfone compound of R1--SO2--R2, with R1 being an alkyl group and R2 a partially oxygenated alkyl group, to exhibit high chemical and thermal stability and high oxidation resistance. For another example, a battery can include, between an anode and a cathode, an electrolyte which includes ionic electrolyte salts and a non-aqueous electrolyte solvent which includes a non-symmetrical, non-cyclic sulfone. The sulfone has a formula of R1--SO2--R2, wherein R1 is a linear or branched alkyl or partially or fully fluorinated linear or branched alkyl group having 1 to 7 carbon atoms, and R2 is a linear or branched or partially or fully fluorinated linear or branched oxygen containing alkyl group having 1 to 7 carbon atoms. The electrolyte can include an electrolyte co-solvent and an electrolyte additive for protective layer formation.

  20. Templates for Fabricating Nanowire/Nanoconduit-Based Devices

    NASA Technical Reports Server (NTRS)

    Sakamoto, Jeffrey; Holt, Todd; Welker, David

    2006-01-01

    An effort is underway to develop processes for making templates that could be used as deposition molds and etching masks in the fabrication of devices containing arrays of nanowires and/or nanoconduits. Highly-ordered, optical-fiber arrays consisting of dissimilar polymers comprise the template technology. The selective removal of the fiber cores in specific solvents creates the porous templates to be filled with a "top-down" deposition process such as electrochemical deposition, sputter deposition, molecular beam epitaxy, and the like. Typically, the fiber bundles consist of polystyrene (PS) fiber cores, which are clad with varying thickness poly(methyl methacrylate) (PMMA). When arranged in hexagonal, close-packed configuration and pulled, the fibers form highly-ordered arrays comprised of PS fiber cores surrounded by a continuous matrix of PMMA. The ratio of PMMA cladding thickness to PS core diameter determines the spacing between PS fiber cores and typically ranges from 3:1 to 1:1. Essentially, the simultaneous heating and drawing or pulling in the longitudinal direction of polymer-fiber arrays fuses the fibers together.

  1. Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

    SciTech Connect

    Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyunsung; Shim, Jong-In; Shin, Dong-Soo; Kim, Kyu-Sang

    2014-04-14

    Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.

  2. Discrimination between spin-dependent charge transport and spin-dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance

    NASA Astrophysics Data System (ADS)

    Kavand, Marzieh; Baird, Douglas; van Schooten, Kipp; Malissa, Hans; Lupton, John M.; Boehme, Christoph

    2016-08-01

    Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is not straightforward to differentiate between pure single-carrier spin-dependent transport processes which control the current and therefore the electroluminescence, and spin-dependent electron-hole recombination which determines the electroluminescence yield and in turn modulates the current. We therefore investigate the correlation between the dynamics of spin-dependent electric current and spin-dependent electroluminescence in two derivatives of the conjugated polymer poly(phenylene-vinylene) using simultaneously measured pulsed electrically detected (pEDMR) and optically detected (pODMR) magnetic resonance spectroscopy. This experimental approach requires careful analysis of the transient response functions under optical and electrical detection. At room temperature and under bipolar charge-carrier injection conditions, a correlation of the pEDMR and the pODMR signals is observed, consistent with the hypothesis that the recombination currents involve spin-dependent electronic transitions. This observation is inconsistent with the hypothesis that these signals are caused by spin-dependent charge-carrier transport. These results therefore provide no evidence that supports earlier claims that spin-dependent transport plays a role for room-temperature magnetoresistance effects. At low temperatures, however, the correlation between pEDMR and pODMR is weakened, demonstrating that more than one spin-dependent process influences the optoelectronic materials' properties. This conclusion is consistent with prior studies of half-field resonances that were attributed to spin-dependent triplet exciton recombination, which becomes significant at low temperatures when the triplet lifetime increases.

  3. Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

    NASA Technical Reports Server (NTRS)

    Hersam, Mark C. (Inventor); Pingree, Liam S. C. (Inventor)

    2008-01-01

    A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

  4. Aerodynamic Design Criteria for Class 8 Heavy Vehicles Trailer Base Devices to Attain Optimum Performance

    SciTech Connect

    Salari, K; Ortega, J

    2010-12-13

    Lawrence Livermore National Laboratory (LLNL) as part of its Department of Energy (DOE), Energy Efficiency and Renewable Energy (EERE), and Vehicle Technologies Program (VTP) effort has investigated class 8 tractor-trailer aerodynamics for many years. This effort has identified many drag producing flow structures around the heavy vehicles and also has designed and tested many new active and passive drag reduction techniques and concepts for significant on the road fuel economy improvements. As part of this effort a database of experimental, computational, and conceptual design for aerodynamic drag reduction devices has been established. The objective of this report is to provide design guidance for trailer base devices to improve their aerodynamic performance. These devices are commonly referred to as boattails, base flaps, tail devices, and etc. The information provided here is based on past research and our most recent full-scale experimental investigations in collaboration with Navistar Inc. Additional supporting data from LLNL/Navistar wind tunnel, track test, and on the road test will be published soon. The trailer base devices can be identified by 4 flat panels that are attached to the rear edges of the trailer base to form a closed cavity. These devices have been engineered in many different forms such as, inflatable and non-inflatable, 3 and 4-sided, closed and open cavity, and etc. The following is an in-depth discussion with some recommendations, based on existing data and current research activities, of changes that could be made to these devices to improve their aerodynamic performance. There are 6 primary factors that could influence the aerodynamic performance of trailer base devices: (1) Deflection angle; (2) Boattail length; (3) Sealing of edges and corners; (4) 3 versus 4-sided, Position of the 4th plate; (5) Boattail vertical extension, Skirt - boattail transition; and (6) Closed versus open cavity.

  5. [Web-based support system for medical device maintenance].

    PubMed

    Zhao, Jinhai; Hou, Wensheng; Chen, Haiyan; Tang, Wei; Wang, Yihui

    2015-01-01

    A Web-based technology system was put forward aiming at the actual problems of the long maintenance cycle and the difficulties of the maintenance and repairing of medical equipments. Based on analysis of platform system structure and function, using the key technologies such as search engine, BBS, knowledge base and etc, a platform for medical equipment service technician to use by online or offline was designed. The platform provides users with knowledge services and interactive services, enabling users to get a more ideal solution.

  6. Investigations on electroluminescent tapes and foils in relation to their applications in automotive

    NASA Astrophysics Data System (ADS)

    Plotog, Ioan

    2015-02-01

    The electroluminescent (EL) tapes or foils having barrier films for an additional level of protection against the toughest environments conditions, offer a large area of applications. The EL lights, due to their characteristics, began to be used not only in the entertainment industry, but also for automotive and aerospace applications. In the paper, the investigations regarding EL foils technical performances in relation to their applications as light sources in automotive ambient light were presented. The experiments were designed based on the results of EL foils electrical properties previous investigations done in laboratory conditions, taking into account the range of automotive ambient temperatures for sinusoidal alternative supply voltage. The measurements for different temperatures were done by keeping the EL foils into electronic controlled oven that ensures the dark enclosure offering conditions to use a lux-meter in order to measure and maintain under control light emission intensity. The experiments results define the EL foils characteristics as load in automotive ambient temperatures condition, assuring so the data for optimal design of a dedicated inverter.

  7. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Maruo, Daiki; Hai, Pham Nam; Tanaka, Masaaki

    2015-03-01

    We demonstrate visible-light electroluminescence (EL) due to d- d transitions in GaAs:Mn based LEDs. We design p+-n junctions with a p+ GaAs:Mn layer, in which at a reverse bias voltage (-3 to -6 V), an intense electric field builds up in the depletion layers of the p+-n junctions. Holes are injected to the depletion layer by Zener tunneling from the conduction band or by diffusion of minority holes from the valence band of the n-type layer. These holes are accelerated by the intense electric field in the depletion layer, and excite the d electrons of Mn in the p+ GaAs:Mn layer by impact excitations. We observe visible-light emission at E1 = 1.89 eV and E2 = 2.16 eV, which are exactly the same as the 4T1-->6A1 and 4A2-->4T1 transition energy of Mn. The threshold voltage for observation of visible-light EL is -4 V, corresponding to -(E1 +E2) / e. This indicates that the impact excitation is most effective for the one step excitation from the ground state 6A1 to the highest excited state 4A2 .

  8. New bithiophene-containing electroluminescent polymer: Synthesis, characterization, optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Jaballah, Nejmeddine; Chemli, Mejed; Fave, Jean-Louis; Majdoub, Mustapha

    2015-12-01

    A semi-conducting polymer, P-DSBT, based on distyryl-bithiophene π-conjugated sequences has been synthesized and characterized. The macromolecular material was soluble in volatile solvents and showed a good film quality; it exhibited an amorphous morphology with relatively high glass transition temperature. The absorption and photoluminescence properties of the polymer were studied in solution and as thin solid film, which showed an optical gap of 2.6 eV. The HOMO/LUMO energy levels were evaluated by cyclic voltammetry measurements and indicate a p-type semi-conducting material. The electrical properties of P-DSBT were investigated by the current-tension characteristic and modeled by the current space-charge-limited (SCLC) mechanism; charge carrier mobility higher than 10-6 cm2 V-1 s-1 was evaluated. A yellow-green electroluminescence was evidenced in a multilayer organic light-emitting diode with an [ITO/PEDOT:PPS/P-DSBT/BCP/Al] configuration.

  9. Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs

    NASA Astrophysics Data System (ADS)

    Golz, Christian; Dadgostar, Shabnam; Masselink, W. Ted; Hatami, Fariba

    2016-03-01

    We present the growth, fabrication, and characterization of light-emitting diodes based on (Al,Ga)As quantum wells and dots embedded in a p-n GaP structure. Samples were grown on Sulphur-doped GaP (001) substrate using gas-source molecular beam epitaxy. The structures include either GaAs quantum structures with nominal coverage between 1.2 and 3.6 monolayers or Al0.3Ga0.7As quantum wells. For structures with GaAs layer thicker than 1.5 monolayers the 3.6% lattice mismatch in the materials system results in formation of quantum dots via Stranski-Krastanow growth mode with areal density of about 8×1010 cm-2. The atomic-force and transmission-electron microscopy show that with increasing coverage of GaAs from 1.8 to 3.6 monolayers the average lateral size and height of dots change in the range of 17-34 nm and 0.9-2 nm, respectively. The diode structures emit light from the red to the green spectral range up to room temperature. The GaAs/GaP QDs show electroluminescence between 1.8 eV and 2 eV, whereas the Al0.3Ga0.7As quantum wells emit light between 2 eV and 2.2 eV.

  10. Portable paper-based device for quantitative colorimetric assays relying on light reflectance principle.

    PubMed

    Li, Bowei; Fu, Longwen; Zhang, Wei; Feng, Weiwei; Chen, Lingxin

    2014-04-01

    This paper presents a novel paper-based analytical device based on the colorimetric paper assays through its light reflectance. The device is portable, low cost (<20 dollars), and lightweight (only 176 g) that is available to assess the cost-effectiveness and appropriateness of the original health care or on-site detection information. Based on the light reflectance principle, the signal can be obtained directly, stably and user-friendly in our device. We demonstrated the utility and broad applicability of this technique with measurements of different biological and pollution target samples (BSA, glucose, Fe, and nitrite). Moreover, the real samples of Fe (II) and nitrite in the local tap water were successfully analyzed, and compared with the standard UV absorption method, the quantitative results showed good performance, reproducibility, and reliability. This device could provide quantitative information very conveniently and show great potential to broad fields of resource-limited analysis, medical diagnostics, and on-site environmental detection.

  11. Detection of nucleic acids by graphene-based devices: A first-principles study

    SciTech Connect

    Zhang, Hua; Xu, Hui E-mail: ouyangfp06@tsinghua.org.cn; Ni, Xiang; Lin Peng, Sheng; Liu, Qi; Ping OuYang, Fang E-mail: ouyangfp06@tsinghua.org.cn

    2014-04-07

    Based on first-principles quantum transport calculations, we design a graphene-based biosensor device, which is composed of graphene nanoribbons electrodes and a biomolecule. It is found that when different nucleobases or poly nucleobase chains are located in the nanogap, the device presents completely different transport properties, showing different current informations. And the change of currents from 2 to 5 orders of magnitude for four different nucleobases suggests a great ability of discrimination by utilizing such a device. The physical mechanism of this phenomenon originates from their different chemical composition and structure. Moreover, we also explore the coupling effect of several neighboring bases and the size effect of the nanogap on transport properties. Our results show the possibility of rapid sequencing DNA by measuring such a transverse-current of the device, and provide a new idea for sequencing DNA.

  12. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy

    NASA Astrophysics Data System (ADS)

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-02-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  13. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

    PubMed

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-01-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  14. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    SciTech Connect

    Meng, Qiushi; Zhang, Chao; Zhang, Yang E-mail: zcdong@ustc.edu.cn; Zhang, Yao; Liao, Yuan; Dong, Zhenchao E-mail: zcdong@ustc.edu.cn

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within several molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.

  15. Fabrication techniques and applications of flexible graphene-based electronic devices

    NASA Astrophysics Data System (ADS)

    Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

    2016-04-01

    In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

  16. Influence of sterilisation methods on collagen-based devices stability and properties.

    PubMed

    Delgado, Luis M; Pandit, Abhay; Zeugolis, Dimitrios I

    2014-05-01

    Sterilisation is essential for any implantable medical device in order to prevent infection in patients. The selection of the most appropriate sterilisation method depends on the nature and the physical state of the material to be sterilised; the influence of the sterilisation method on the properties of the device; and the type of the potential contaminant. In this context, herein we review the influence of ethylene oxide, γ-irradiation, e-beam irradiation, gas plasma, peracetic acid and ethanol on structural, biomechanical, biochemical and biological properties of collagen-based devices. Data to-date demonstrate that chemical approaches are associated with cytotoxicity, whilst physical methods are associated with degradation, subject to the device physical characteristics. Thus, the sterilisation method of choice is device dependent. PMID:24654928

  17. Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

    NASA Astrophysics Data System (ADS)

    Connors, Michael K.; Millsapp, Jamal E.; Turner, George W.

    2016-06-01

    The quality and yield of GaAs-based ridge waveguide devices fabricated at MIT Lincoln Laboratory were negatively impacted by the random lot-to-lot appearance of blisters in the front-side contact metal. The blisters signaled compromised adhesion between the front-side contact metal, underlying SiO2 dielectric coating, and semiconductor surface. A thermal-anneal procedure developed for the fabrication of GaAs slab coupled optical waveguide (SCOW) ridge waveguide devices stabilizes the SiO2 dielectric coating by means of outgassing and stress reduction. This process eliminates a primary source of adhesion loss, as well as blister generation, and thereby significantly improves device yield. Stoney's equation was used to analyze stress-induced bow in device wafers fabricated using this stabilization procedure. This analysis suggests that changes in wafer bow contribute to the incidence of metal blisters in SCOW devices.

  18. Code division in optical memory devices based on photon echo

    NASA Astrophysics Data System (ADS)

    Kalachev, Alexey A.; Vlasova, Daria D.

    2006-03-01

    The theory of multi-channel optical memory based on photon echo is developed. It is shown that under long-lived photon echo regime the writing and reading of information with code division is possible using phase modulation of reference and reading pulses. A simple method for construction of a system of noise-like signals, which is based on the segmentation of Frank sequence is proposed. It is shown that in comparison to the system of random biphase signals this system leads to the efficient decreasing of mutual influence of channels and increasing of random/noise ratio under reading of information.

  19. Stackelberg Game Based Power Allocation for Physical Layer Security of Device-to-device Communication Underlaying Cellular Networks

    NASA Astrophysics Data System (ADS)

    Qu, Junyue; Cai, Yueming; Wu, Dan; Chen, Hualiang

    2014-05-01

    The problem of power allocation for device-to-device (D2D) underlay communication to improve physical layer security is addressed. Specifically, to improve the secure communication of the cellular users, we introduce a Stackelberg game for allocating the power of the D2D link under a total power constraint and a rate constraint at the D2D pair. In the introduced Stackelberg game the D2D pair works as a seller and the cellular UEs work as buyers. Firstly, because the interference signals from D2D pair are unknown to both the legitimate receiver and the illegitimate eavesdropper, it is possible that a cellular UE decline to participate in the introduced Stackelberg game. So the condition under which a legitimate user will participate in the introduced Stackelberg game is discussed. Then, based on the Stackelberg game, we propose a semi-distributed power allocation algorithm, which is proved to conclude after finite-time iterations. In the end, some simulations are presented to verify the performance improvement in the physical layer security of cellular UEs using the proposed power allocation algorithm. We can determine that with the proposed algorithm, while the D2D pair's communication demand is met, the physical layer security of cellular UEs can be improved.

  20. Electroluminescent apparatus having a structured luminescence conversion layer

    DOEpatents

    Krummacher, Benjamin Claus

    2008-09-02

    An apparatus such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains color-changing and non-color-changing regions arranged in a particular pattern.