Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, John R.

1986-01-01

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, J.R.

1984-10-10

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Installation Status of the Electron Beam Profiler for the Fermilab Main Injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thurman-Keup, R.; Alvarez, M.; Fitzgerald, J.

2015-11-06

The planned neutrino program at Fermilab requires large proton beam intensities in excess of 2 MW. Measuring the transverse profiles of these high intensity beams is challenging and often depends on non-invasive techniques. One such technique involves measuring the deflection of a probe beam of electrons with a trajectory perpendicular to the proton beam. A device such as this is already in use at the Spallation Neutron Source at ORNL and the installation of a similar device is underway in the Main Injector at Fermilab. The present installation status of the electron beam profiler for the Main Injector will bemore » discussed together with some simulations and test stand results.« less

Millimeter-wave generation with spiraling electron beams

NASA Technical Reports Server (NTRS)

Kulke, B.

1971-01-01

The feasibility of using the interaction between a thin, solid, spiraling electron beam of 10 to 20 kV energy and a microwave cavity to generate watts of CW millimeter-wave power was investigated. Experimental results are given for several prototype devices operating at 9.4 GHz and at 94 GHz. Power outputs of 5 W, and electronic efficiencies near 3%, were obtained at X band, and moderate gain was obtained at 94 GHz. The small-signal theory gives a good fit to the X-band data, and the device behavior at 94 GHz is as expected from the given beam characteristics. The performance is limited chiefly by the velocity spread in the spiraling electron beam, and once this can be brought under control, high-power generation of millimeter waves appears quite feasible with this type of device.

Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

PubMed

Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

2015-11-06

The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

Device and method for relativistic electron beam heating of a high-density plasma to drive fast liners

DOEpatents

Thode, Lester E.

1981-01-01

A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target gas is ionized prior to application of the electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy and momentum into a small localized region of the high-density plasma target. Fast liners disposed in the high-density target plasma are explosively or ablatively driven to implosion by a heated annular plasma surrounding the fast liner which is generated by an annular relativistic electron beam. An azimuthal magnetic field produced by axial current flow in the annular plasma, causes the energy in the heated annular plasma to converge on the fast liner.

Light modulated switches and radio frequency emitters

DOEpatents

Wilson, Mahlon T.; Tallerico, Paul J.

1982-01-01

The disclosure relates to a light modulated electron beam driven radiofrequency emitter. Pulses of light impinge on a photoemissive device which generates an electron beam having the pulse characteristics of the light. The electron beam is accelerated through a radiofrequency resonator which produces radiofrequency emission in accordance with the electron, hence, the light pulses.

Energy monitoring device for 1.5-2.4 MeV electron beams

NASA Astrophysics Data System (ADS)

Fuochi, P. G.; Lavalle, M.; Martelli, A.; Kovács, A.; Mehta, K.; Kuntz, F.; Plumeri, S.

2010-03-01

An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

Development of a radiographic method for measuring the discrete spectrum of the electron beam from a plasma focus device

NASA Astrophysics Data System (ADS)

Shamsian, Neda; Bidabadi, Babak Shirani; Pirjamadi, Hosein

2017-07-01

An indirect method is proposed for measuring the relative energy spectrum of the pulsed electron beam of a plasma focus device. The Bremsstrahlung x-ray, generated by the collision of electrons against the anode surface, was measured behind lead filters with various thicknesses using a radiographic film system. A matrix equation was considered in order to explain the relation between the x-ray dose and the spectral amplitudes of the electron beam. The electron spectrum of the device was measured at 0.6 mbar argon and 22 kV charging voltage, in four discrete energy intervals extending up to 500 keV. The results of the experiments show that most of the electrons are emitted in the 125-375 keV energy range and the spectral amplitude becomes negligible beyond 375 keV.

Commissioning and First Results of the Electron Beam Profiler in the Main Injector at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thurman-Keup, R.; Alvarez, M.; Fitzgerald, J.

2017-08-01

The planned neutrino program at Fermilab requires large proton beam intensities in excess of 2 MW. Measuring the transverse profiles of these high intensity beams is challenging and often depends on non-invasive techniques. One such technique involves measuring the deflection of a probe beam of electrons with a trajectory perpendicular to the proton beam. A device such as this is already in use at the Spallation Neutron Source at ORNL and a similar device has been installed in the Main Injector at Fermilab. Commissioning of the device is in progress with the goal of having it operational by the endmore » of the year. The status of the commissioning and initial results will be presented« less

Device and method for creating Gaussian aberration-corrected electron beams

DOEpatents

McMorran, Benjamin; Linck, Martin

2016-01-19

Electron beam phase gratings have phase profiles that produce a diffracted beam having a Gaussian or other selected intensity profile. Phase profiles can also be selected to correct or compensate electron lens aberrations. Typically, a low diffraction order produces a suitable phase profile, and other orders are discarded.

NOx reduction by electron beam-produced nitrogen atom injection

DOEpatents

Penetrante, Bernardino M.

2002-01-01

Deactivated atomic nitrogen generated by an electron beam from a gas stream containing more than 99% N.sub.2 is injected at low temperatures into an engine exhaust to reduce NOx emissions. High NOx reduction efficiency is achieved with compact electron beam devices without use of a catalyst.

Device and method for imploding a microsphere with a fast liner

DOEpatents

Thode, Lester E.

1981-01-01

A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target gas is ionized prior to application of the electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy and momentum into a small localized region of the high-density plasma target. Fast liners disposed in the high-density target plasma are explosively or ablatively driven to implosion by a heated annular plasma surrounding the fast liner generated by an annular relativistic electron beam. An azimuthal magnetic field produced by axial current flow in the annular plasma, causes the energy in the heated annular plasma to converge on the fast liner to drive the fast liner to implode a microsphere.

Programmable graphene doping via electron beam irradiation.

PubMed

Zhou, Yangbo; Jadwiszczak, Jakub; Keane, Darragh; Chen, Ying; Yu, Dapeng; Zhang, Hongzhou

2017-06-29

Graphene is a promising candidate to succeed silicon based devices, and the conventional strategies for fabrication and testing of graphene-based electronics often utilise an electron beam. Here, we report on a systematic study of the effect of electron beam exposure on graphene devices. We realise reversible doping of on-chip graphene using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the substrate. The effect of substrate-embedded charges on carrier mobility and conductivity of graphene is studied, with a dielectric screening model proposed to explain the effective n-type and p-type doping produced at different beam energies. Multiple logic operations are thus implemented in a single graphene sheet by using site-specific e-beam irradiation. We extend the phenomenon to MoS 2 , generalising it to conductive two-dimensional materials. Our results are of importance to imaging, in situ characterisation and lithographic techniques employed to investigate 2D materials.

Electron beam gun with kinematic coupling for high power RF vacuum devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borchard, Philipp

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composedmore » of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.« less

Precision Electron Beam Polarimetry in Hall C at Jefferson Lab

NASA Astrophysics Data System (ADS)

Gaskell, David

2013-10-01

The electron beam polarization in experimental Hall C at Jefferson Lab is measured using two devices. The Hall-C/Basel Møller polarimeter measures the beam polarization via electron-electron scattering and utilizes a novel target system in which a pure iron foil is driven to magnetic saturation (out of plane) using a superconducting solenoid. A Compton polarimeter measures the polarization via electron-photon scattering, where the photons are provided by a high-power, CW laser coupled to a low gain Fabry-Perot cavity. In this case, both the Compton-scattered electrons and backscattered photons provide measurements of the beam polarization. Results from both polarimeters, acquired during the Q-Weak experiment in Hall C, will be presented. In particular, the results of a test in which the Møller and Compton polarimeters made interleaving measurements at identical beam currents will be shown. In addition, plans for operation of both devices after completion of the Jefferson Lab 12 GeV Upgrade will also be discussed.

Device For Trapping Laser Pulses In An Optical Delay Line

DOEpatents

Yu, David U. L.; Bullock, Donald L.

1997-12-23

A device for maintaining a high-energy laser pulse within a recirculating optical delay line for a period time to optimize the interaction of the pulse with an electron beam pulse train comprising closely spaced electron micropulses. The delay line allows a single optical pulse to interact with many of the electron micropulses in a single electron beam macropulse in sequence and for the introduction of additional optical pulses to interact with the micropulses of additional electron beam macropulses. The device comprises a polarization-sensitive beam splitter for admitting an optical pulse to and ejecting it from the delay line according to its polarization state, a Pockels cell to control the polarization of the pulse within the delay line for the purpose of maintaining it within the delay line or ejecting it from the delay line, a pair of focusing mirrors positioned so that a collimated incoming optical pulse is focused by one of them to a focal point where the pulse interacts with the electron beam and then afterwards the pulse is recollimated by the second focusing mirror, and a timing device which synchronizes the introduction of the laser pulse into the optical delay line with the arrival of the electron macropulse at the delay line to ensure the interaction of the laser pulse with a prescribed number of electron micropulses in sequence. In a first embodiment of the invention, the principal optical elements are mounted with their axes collinear. In a second embodiment, all principal optical elements are mounted in the configuration of a ring.

Susceptor heating device for electron beam brazing

DOEpatents

Antieau, Susan M.; Johnson, Robert G. R.

1999-01-01

A brazing device and method are provided which locally apply a controlled amount of heat to a selected area, within a vacuum. The device brazes two components together with a brazing metal. A susceptor plate is placed in thermal contact with one of the components. A serrated pedestal supports the susceptor plate. When the pedestal and susceptor plate are in place, an electron gun irradiates an electron beam at the susceptor plate such that the susceptor plate is sufficiently heated to transfer heat through the one component and melt the brazing metal.

Trends in solid state electronics, part 2

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1972-01-01

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Electron capture dissociation in a branched radio-frequency ion trap.

PubMed

Baba, Takashi; Campbell, J Larry; Le Blanc, J C Yves; Hager, James W; Thomson, Bruce A

2015-01-06

We have developed a high-throughput electron capture dissociation (ECD) device coupled to a quadrupole time-of-flight mass spectrometer using novel branched radio frequency ion trap architecture. With this device, a low-energy electron beam can be injected orthogonally into the analytical ion beam with independent control of both the ion and electron beams. While ions and electrons can interact in a "flow-through" mode, we observed a large enhancement in ECD efficiency by introducing a short ion trapping period at the region of ion and electron beam intersection. This simultaneous trapping mode still provides up to five ECD spectra per second while operating in an information-dependent acquisition workflow. Coupled to liquid chromatography (LC), this LC-ECD workflow provides good sequence coverage for both trypsin and Lys C digests of bovine serum albumin, providing ECD spectra for doubly charged precursor ions with very good efficiency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Woo-Young; Seol, Jae-Bok, E-mail: jb-seol@postech.ac.kr; Kwak, Chan-Min

The compositional distribution of In atoms in InGaN/GaN multiple quantum wells is considered as one of the candidates for carrier localization center, which enhances the efficiency of the light-emitting diodes. However, two challenging issues exist in this research area. First, an inhomogeneous In distribution is initially formed by spinodal decomposition during device fabrication as revealed by transmission electron microscopy. Second, electron-beam irradiation during microscopy causes the compositional inhomogeneity of In to appear as a damage contrast. Here, a systematic approach was proposed in this study: Electron-beam with current density ranging from 0 to 20.9 A/cm{sup 2} was initially exposed to themore » surface regions during microscopy. Then, the electron-beam irradiated regions at the tip surface were further removed, and finally, atom probe tomography was performed to run the samples without beam-induced damage and to evaluate the existence of local inhomegenity of In atoms. We proved that after eliminating the electron-beam induced damage regions, no evidence of In clustering was observed in the blue-emitting InGaN/GaN devices. In addition, it is concluded that the electron-beam induced localization of In atoms is a surface-related phenomenon, and hence spinodal decomposition, which is typically responsible for such In clustering, is negligible for biaxially strained blue-emitting InGaN/GaN devices.« less

Investigations on the structure of the extracted ion beam from an electron cyclotron resonance ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spaedtke, P.; Lang, R.; Maeder, J.

2012-02-15

Using improved beam diagnostic tools, the structure of an ion beam extracted from an electron cyclotron resonance ion source (ECRIS) becomes visible. Especially viewing targets to display the beam profile and pepper pot devices for emittance measurements turned out to be very useful. On the contrary, diagnostic tools integrating over one space coordinate like wire harps for profile measurements or slit-slit devices, respectively slit-grid devices to measure the emittance might be applicable for beam transport investigations in a quadrupole channel, but are not very meaningful for investigations regarding the given ECRIS symmetry. Here we try to reproduce the experimentally foundmore » structure on the ion beam by simulation. For the simulation, a certain model has to be used to reproduce the experimental results. The model is also described in this paper.« less

GHz laser-free time-resolved transmission electron microscopy: A stroboscopic high-duty-cycle method

DOE PAGES

Qiu, Jiaqi; Zhu, Yimei; Ha, Gwanghui; ...

2015-11-10

In this study, a device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second electron pulse sequences (pulse trains) at >1 GHz repetition rates, as well as controllably manipulates the resulting pulses. Ultimately, it leads to negligible electron pulse phase-space degradation compared to the incomingmore » dc beam parameters. The temporal pulse length and repetition rate for the EMMP can be continuously tunable over wide ranges.« less

Gigatron microwave amplifier

DOEpatents

McIntyre, P.M.

1993-07-13

An electron tube for achieving high power at high frequency with high efficiency is described, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot there through for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.

Gigatron microwave amplifier

DOEpatents

McIntyre, Peter M.

1993-01-01

An electron tube for achieving high power at high frequency with high efficiency, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot therethrough for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.

Repetitively pumped electron beam device

DOEpatents

Schlitt, Leland G [Livermore, CA

1979-07-24

Apparatus for producing fast, repetitive pulses of controllable length of an electron beam by phased energy storage in a transmission line of length matched to the number of pulses and specific pulse lengths desired.

Beam Conditioning and Harmonic Generation in Free ElectronLasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charman, A.E.; Penn, G.; Wolski, A.

2004-07-05

The next generation of large-scale free-electron lasers (FELs) such as Euro-XFEL and LCLS are to be devices which produce coherent X-rays using Self-Amplified Spontaneous Emission (SASE). The performance of these devices is limited by the spread in longitudinal velocities of the beam. In the case where this spread arises primarily from large transverse oscillation amplitudes, beam conditioning can significantly enhance FEL performance. Future X-ray sources may also exploit harmonic generation starting from laser-seeded modulation. Preliminary analysis of such devices is discussed, based on a novel trial-function/variational-principle approach, which shows good agreement with more lengthy numerical simulations.

Method and apparatus for a high-resolution three dimensional confocal scanning transmission electron microscope

DOEpatents

de Jonge, Niels [Oak Ridge, TN

2010-08-17

A confocal scanning transmission electron microscope which includes an electron illumination device providing an incident electron beam propagating in a direction defining a propagation axis, and a precision specimen scanning stage positioned along the propagation axis and movable in at least one direction transverse to the propagation axis. The precision specimen scanning stage is configured for positioning a specimen relative to the incident electron beam. A projector lens receives a transmitted electron beam transmitted through at least part of the specimen and focuses this transmitted beam onto an image plane, where the transmitted beam results from the specimen being illuminated by the incident electron beam. A detection system is placed approximately in the image plane.

Free electron laser using Rf coupled accelerating and decelerating structures

DOEpatents

Brau, Charles A.; Swenson, Donald A.; Boyd, Jr., Thomas J.

1984-01-01

A free electron laser and free electron laser amplifier using beam transport devices for guiding an electron beam to a wiggler of a free electron laser and returning the electron beam to decelerating cavities disposed adjacent to the accelerating cavities of the free electron laser. Rf energy is generated from the energy depleted electron beam after it emerges from the wiggler by means of the decelerating cavities which are closely coupled to the accelerating cavities, or by means of a second bore within a single set of cavities. Rf energy generated from the decelerated electron beam is used to supplement energy provided by an external source, such as a klystron, to thereby enhance overall efficiency of the system.

Electron beam energy chirp control with a rectangular corrugated structure at the Linac Coherent Light Source

DOE PAGES

Zhang, Zhen; Bane, Karl; Ding, Yuantao; ...

2015-01-30

In this study, electron beam energy chirp is an important parameter that affects the bandwidth and performance of a linac-based, free-electron laser. In this paper we study the wakefields generated by a beam passing between at metallic plates with small corrugations, and then apply such a device as a passive dechirper for the Linac Coherent Light Source (LCLS) energy chirp control with a multi-GeV and femtosecond electron beam. Similar devices have been tested in several places at relatively low energies (~100 MeV) and with relatively long bunches (> 1ps). In the parameter regime of the LCLS dechirper, with the corrugationmore » size similar to the gap between the plates, the analytical solutions of the wakefields are no longer applicable, and we resort to a field matching program to obtain the wakes. Based on the numerical calculations, we fit the short-range, longitudinal wakes to simple formulas, valid over a large, useful parameter range. Finally, since the transverse wakefields - both dipole and quadrupole-are strong, we compute and include them in beam dynamics simulations to investigate the error tolerances when this device is introduced in the LCLS.« less

Structured organic materials and devices using low-energy particle beams

DOEpatents

Vardeny, Z. Valy; Li, Sergey; Delong, Matthew C.; Jiang, Xiaomei

2005-09-13

Organic materials exposed to an electron beam for patterning a substrate (1) to make an optoelectronic organic device which includes a source, a drain, gate dielectric layer (4), and a substrate for emitting light.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolf, Z.; Ruland, R.; Dix, B.

The Stanford Linear Accelerator Center is evaluating the feasibility of placing a free electron laser (FEL) at the end of the linear accelerator. The proposal is to inject electrons two thirds of the way down the linac, accelerate the electrons for the last one third of the linac, and then send the electrons into the FEL. This project is known as the LCLS (Linac Coherent Light Source). To test the feasibility of the LCLS, a smaller experiment VISA (Visual to Infrared SASE (Self Amplified Stimulated Emission) Amplifier) is being performed at Brookhaven National Laboratory. VISA consists of four wiggler segments,more » each 0.99 m long. The four segments are required to be aligned to the beam axis with an rms error less than 50 {micro}m [1]. This very demanding alignment is carried out in two steps [2]. First the segments are fiducialized using a pulsed wire system. Then the wiggler segments are placed along a reference laser beam which coincides with the electron beam axis. In the wiggler segment fiducialization, a wire is stretched through a wiggler segment and a current pulse is sent down the wire. The deflection of the wire is monitored. The deflection gives information about the electron beam trajectory. The wire is moved until its x position, the coordinate without wire sag, is on the ideal beam trajectory. (The y position is obtained by rotating the wiggler 90{sup o}.) Once the wire is on the ideal beam trajectory, the wire's location is measured relative to tooling balls on the wiggler segment. To locate the wire, a device was constructed which measures the wire position relative to tooling balls on the device. The device is called the wire finder. It will be discussed in this paper. To place the magnets along the reference laser beam, the position of the laser beam must be determined. A device which can locate the laser beam relative to tooling balls was constructed and is also discussed in this paper. This device is called the laser finder. With a total alignment error budget less than 50 {micro}m, both the fiducialization and magnet placement must be performed with errors much smaller than 50 {micro}m. It is desired to keep the errors from the wire finder and laser finder at the few {micro}m level.« less

Use of electronic portal imaging devices for electron treatment verification.

PubMed

Kairn, T; Aland, T; Crowe, S B; Trapp, J V

2016-03-01

This study aims to help broaden the use of electronic portal imaging devices (EPIDs) for pre-treatment patient positioning verification, from photon-beam radiotherapy to photon- and electron-beam radiotherapy, by proposing and testing a method for acquiring clinically-useful EPID images of patient anatomy using electron beams, with a view to enabling and encouraging further research in this area. EPID images used in this study were acquired using all available beams from a linac configured to deliver electron beams with nominal energies of 6, 9, 12, 16 and 20 MeV, as well as photon beams with nominal energies of 6 and 10 MV. A widely-available heterogeneous, approximately-humanoid, thorax phantom was used, to provide an indication of the contrast and noise produced when imaging different types of tissue with comparatively realistic thicknesses. The acquired images were automatically calibrated, corrected for the effects of variations in the sensitivity of individual photodiodes, using a flood field image. For electron beam imaging, flood field EPID calibration images were acquired with and without the placement of blocks of water-equivalent plastic (with thicknesses approximately equal to the practical range of electrons in the plastic) placed upstream of the EPID, to filter out the primary electron beam, leaving only the bremsstrahlung photon signal. While the electron beam images acquired using a standard (unfiltered) flood field calibration were observed to be noisy and difficult to interpret, the electron beam images acquired using the filtered flood field calibration showed tissues and bony anatomy with levels of contrast and noise that were similar to the contrast and noise levels seen in the clinically acceptable photon beam EPID images. The best electron beam imaging results (highest contrast, signal-to-noise and contrast-to-noise ratios) were achieved when the images were acquired using the higher energy electron beams (16 and 20 MeV) when the EPID was calibrated using an intermediate (12 MeV) electron beam energy. These results demonstrate the feasibility of acquiring clinically-useful EPID images of patient anatomy using electron beams and suggest important avenues for future investigation, thus enabling and encouraging further research in this area. There is manifest potential for the EPID imaging method proposed in this work to lead to the clinical use of electron beam imaging for geometric verification of electron treatments in the future.

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics.

PubMed

Lima, Leandro R F; Hernández, Alexis R; Pinheiro, Felipe A; Lewenkopf, Caio

2016-12-21

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by [Formula: see text], we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

Microwave accelerator E-beam pumped laser

DOEpatents

Brau, Charles A.; Stein, William E.; Rockwood, Stephen D.

1980-01-01

A device and method for pumping gaseous lasers by means of a microwave accelerator. The microwave accelerator produces a relativistic electron beam which is applied along the longitudinal axis of the laser through an electron beam window. The incident points of the electron beam on the electron beam window are varied by deflection coils to enhance the cooling characteristics of the foil. A thyratron is used to reliably modulate the microwave accelerator to produce electron beam pulses which excite the laser medium to produce laser pulse repetition frequencies not previously obtainable. An aerodynamic window is also disclosed which eliminates foil heating problems, as well as a magnetic bottle for reducing laser cavity length and pressures while maintaining efficient energy deposition.

Absorptive pinhole collimators for ballistic Dirac fermions in graphene

PubMed Central

Barnard, Arthur W.; Hughes, Alex; Sharpe, Aaron L.; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David

2017-01-01

Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents the simple use of electrostatic gates to define electron-optical devices in graphene. Here we present a method of creating highly collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18° or narrower, and transmission matching classical ballistic predictions. PMID:28504264

Beamline Insertions Manager at Jefferson Lab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Michael C.

2015-09-01

The beam viewer system at Jefferson Lab provides operators and beam physicists with qualitative and quantitative information on the transverse electron beam properties. There are over 140 beam viewers installed on the 12 GeV CEBAF accelerator. This paper describes an upgrade consisting of replacing the EPICS-based system tasked with managing all viewers with a mixed system utilizing EPICS and high-level software. Most devices, particularly the beam viewers, cannot be safely inserted into the beam line during high-current beam operations. Software is partly responsible for protecting the machine from untimely insertions. The multiplicity of beam-blocking and beam-vulnerable devices motivates us tomore » try a data-driven approach. The beamline insertions application components are centrally managed and configured through an object-oriented software framework created for this purpose. A rules-based engine tracks the configuration and status of every device, along with the beam status of the machine segment containing the device. The application uses this information to decide on which device actions are allowed at any given time.« less

Calorimetry of electron beams and the calibration of dosimeters at high doses

NASA Astrophysics Data System (ADS)

Humphreys, J. C.; McLaughlin, W. L.

Graphite or metal calorimeters are used to make absolute dosimetric measurements of high-energy electron beams. These calibrated beams are then used to calibrate several types of dosimeters for high-dose applications such as medical-product sterilization, polymer modification, food processing, or electronic-device hardness testing. The electron beams are produced either as continuous high-power beams at approximately 4.5 MeV by d.c. type accelerators or in the energy range of approximately 8 to 50 MeV using pulsed microwave linear accelerators (linacs). The continuous beams are generally magnetically scanned to produce a broad, uniform radiation environment for the processing of materials of extended lateral dimensions. The higher-energy pulsed beams may also be scanned for processing applications or may be used in an unscanned, tightly-focused mode to produce maximum absorbed dose rates such as may be required for electronic-device radiation hardness testing. The calorimeters are used over an absorbed dose range of 10 2 to 10 4 Gy. Intercomparison studies are reported between National Institute of Standards and Technology (NIST) and UK National Physical Laboratory (NPL) graphite disk calorimeters at high doses, using the NPL 10-MeV linac, and agreement was found within 1.5%. It was also shown that the electron-beam responses of radiochromic film dosimeters and alanine pellet dosimeters can be accurately calibrated by comparison with calorimeter readings.

Radiation source

DOEpatents

Thode, Lester E.

1981-01-01

A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises DT, DD, or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target gas is ionized prior to application of the relativistic electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region of the high-density plasma target.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

1996-01-01

A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

Repetitively pumped electron beam device

DOEpatents

Schlitt, L.G.

1979-07-24

Disclosed is an apparatus for producing fast, repetitive pulses of controllable length of an electron beam by phased energy storage in a transmission line of length matched to the number of pulses and specific pulse lengths desired. 12 figs.

Sextupole system for the correction of spherical aberration

DOEpatents

Crewe, A.V.; Kopf, D.A.

In an electron beam device in which an electron beam is developed and then focused by a lens to a particular spot, there is provided a means for eliminating spherical aberration. A sextupole electromagnetic lens is positioned between two focusing lenses. The interaction of the sextupole with the beam compensates for spherical aberration. (GHT)

Relativistic electron beam device

DOEpatents

Freeman, J.R.; Poukey, J.W.; Shope, S.L.; Yonas, G.

1975-07-01

A design is given for an electron beam device for irradiating spherical hydrogen isotope bearing targets. The accelerator, which includes hollow cathodes facing each other, injects an anode plasma between the cathodes and produces an approximately 10 nanosecond, megajoule pulse between the anode plasma and the cathodes. Targets may be repetitively positioned within the plasma between the cathodes, and accelerator diode arrangement permits materials to survive operation in a fusion power source. (auth)

Measurements on wave propagation characteristics of spiraling electron beams

NASA Technical Reports Server (NTRS)

Singh, A.; Getty, W. D.

1976-01-01

Dispersion characteristics of cyclotron-harmonic waves propagating on a neutralized spiraling electron beam immersed in a uniform axial magnetic field are studied experimentally. The experimental setup consisted of a vacuum system, an electron-gun corkscrew assembly which produces a 110-eV beam with the desired delta-function velocity distribution, a measurement region where a microwave signal is injected onto the beam to measure wavelengths, and a velocity analyzer for measuring the axial electron velocity. Results of wavelength measurements made at beam currents of 0.15, 1.0, and 2.0 mA are compared with calculated values, and undesirable effects produced by increasing the beam current are discussed. It is concluded that a suitable electron beam for studies of cyclotron-harmonic waves can be generated by the corkscrew device.

Electron Gun For Multiple Beam Klystron Using Magnetic Focusing

DOEpatents

Ives, R. Lawrence; Miram, George; Krasnykh, Anatoly

2004-07-27

An RF device comprising a plurality of drift tubes, each drift tube having a plurality of gaps defining resonant cavities, is immersed in an axial magnetic field. RF energy is introduced at an input RF port at one of these resonant cavities and collected at an output RF port at a different RF cavity. A plurality of electron beams passes through these drift tubes, and each electron beam has an individual magnetic shaping applied which enables confined beam transport through the drift tubes.

Double deflection system for an electron beam device

DOEpatents

Parker, Norman W.; Golladay, Steven D.; Crewe, Albert V.

1978-01-01

A double deflection scanning system for electron beam instruments is provided embodying a means of correcting isotropic coma, and anisotropic coma aberrations induced by the magnetic lens of such an instrument. The scanning system deflects the beam prior to entry into the magnetic lens from the normal on-axis intersection of the beam with the lens according to predetermined formulas and thereby reduces the aberrations.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

1996-04-16

A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

Measuring Beam Sizes and Ultra-Small Electron Emittances Using an X-ray Pinhole Camera.

PubMed

Elleaume, P; Fortgang, C; Penel, C; Tarazona, E

1995-09-01

A very simple pinhole camera set-up has been built to diagnose the electron beam emittance of the ESRF. The pinhole is placed in the air next to an Al window. An image is obtained with a CCD camera imaging a fluorescent screen. The emittance is deduced from the size of the image. The relationship between the measured beam size and the electron beam emittance depends upon the lattice functions alpha, beta and eta, the screen resolution, pinhole size and photon beam divergence. The set-up is capable of measuring emittances as low as 5 pm rad and is presently routinely used as both an electron beam imaging device and an emittance diagnostic.

A tunable electronic beam splitter realized with crossed graphene nanoribbons

NASA Astrophysics Data System (ADS)

Brandimarte, Pedro; Engelund, Mads; Papior, Nick; Garcia-Lekue, Aran; Frederiksen, Thomas; Sánchez-Portal, Daniel

2017-03-01

Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface chemistry strategies for their growth. Here, we explore a prototype 4-terminal semiconducting device formed by two crossed armchair GNRs (AGNRs) using state-of-the-art first-principles transport methods. We analyze in detail the roles of intersection angle, stacking order, inter-GNR separation, GNR width, and finite voltages on the transport characteristics. Interestingly, when the AGNRs intersect at θ =60° , electrons injected from one terminal can be split into two outgoing waves with a tunable ratio around 50% and with almost negligible back-reflection. The split electron wave is found to propagate partly straight across the intersection region in one ribbon and partly in one direction of the other ribbon, i.e., in analogy with an optical beam splitter. Our simulations further identify realistic conditions for which this semiconducting device can act as a mechanically controllable electronic beam splitter with possible applications in carbon-based quantum electronic circuits and electron optics. We rationalize our findings with a simple model suggesting that electronic beam splitters can generally be realized with crossed GNRs.

The design of electron and ion guns, beams, and collectors

NASA Astrophysics Data System (ADS)

Becker, Reinard; Herrmannsfeldt, William B.

2004-01-01

The well known `SLAC Electron Trajectory Program' (EGUN) has been ported to PCs and has been developed into a family of programs for the design and the optimization of particle optics devices including electron and ion guns, beam transport sections and collectors. We will discuss the application of these tools for the design and the optimization of the essential parts of EBIS/T devices. The discussion will include conditions in which restrictions in the reliability of simulations may occur due to the mathematical modeling and how to overcome them.

Electron Lenses for the Large Hadron Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stancari, Giulio; Valishev, Alexander; Bruce, Roderik

Electron lenses are pulsed, magnetically confined electron beams whose current-density profile is shaped to obtain the desired effect on the circulating beam. Electron lenses were used in the Fermilab Tevatron collider for bunch-by-bunch compensation of long-range beam-beam tune shifts, for removal of uncaptured particles in the abort gap, for preliminary experiments on head-on beam-beam compensation, and for the demonstration of halo scraping with hollow electron beams. Electron lenses for beam-beam compensation are being commissioned in RHIC at BNL. Within the US LHC Accelerator Research Program and the European HiLumi LHC Design Study, hollow electron beam collimation was studied as anmore » option to complement the collimation system for the LHC upgrades. This project is moving towards a technical design in 2014, with the goal to build the devices in 2015-2017, after resuming LHC operations and re-assessing needs and requirements at 6.5 TeV. Because of their electric charge and the absence of materials close to the proton beam, electron lenses may also provide an alternative to wires for long-range beam-beam compensation in LHC luminosity upgrade scenarios with small crossing angles.« less

Review Of E-Beam Electrical Test Techniques

NASA Astrophysics Data System (ADS)

Hohn, Fritz J.

1987-09-01

Electron beams as a viable technique for contactless testing of electrical functions and electrical integrity of different active devices in VLSI-chips has been demonstrated over the past years. This method of testing electronic networks, most widely used in the laboratory environment, is based on an electron probe which is deflected from point to point in the network. A current of secondary electrons emitted in response to the impingement of the electron probe is converted to a signal indicating the presence of a voltage or varying potential at the different points. Voltage contrast, electron beam induced current, dual potential approach, stroboscopic techniques and other methods have been developed and are used to detect different functional failures in devices. Besides the VLSI application, the contactless testing of three dimensional conductor networks of a 10cm x 10cm x .8cm multilayer ceramic module poses a different and new application for the electron beam test technique. A dual potential electron beam test system allows to generate electron beam induced voltage contrast. The same system at a different potential is used to detect this voltage contrast over the large area without moving the substrate and thus test for the electrical integrity of the networks. Less attention in most of the applications has been paid to the electron optical environment, mostly SEM's were upgraded or converted to do the job of a "voltage contrast" machine. This by no means will satisfy all requirements and more thoughts have to be given to aspects such as: low voltage electron guns: thermal emitter, Schottky emitter, field emitter, low voltage electron optics, two lens systems, different means of detection, signal processing - storage and others. This paper will review available E-beam test techniques, specific applications and some critical components.

Imaging interfacial electrical transport in graphene–MoS{sub 2} heterostructures with electron-beam-induced-currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, E. R., E-mail: ewhite@physics.ucla.edu; Kerelsky, Alexander; Hubbard, William A.

2015-11-30

Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS{sub 2} heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrentmore » collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.« less

Self-excitation of microwave oscillations in plasma-assisted slow-wave oscillators by an electron beam with a movable focus

NASA Astrophysics Data System (ADS)

Bliokh, Yu. P.; Nusinovich, G. S.; Shkvarunets, A. G.; Carmel, Y.

2004-10-01

Plasma-assisted slow-wave oscillators (pasotrons) operate without external magnetic fields, which makes these devices quite compact and lightweight. Beam focusing in pasotrons is provided by ions, which appear in the device due to the impact ionization of a neutral gas by beam electrons. Typically, the ionization time is on the order of the rise time of the beam current. This means that, during the rise of the current, beam focusing by ions becomes stronger. Correspondingly, a beam of electrons, which was initially diverging radially due to the self-electric field, starts to be focused by ions, and this focus moves towards the gun as the ion density increases. This feature makes the self-excitation of electromagnetic (em) oscillations in pasotrons quite different from practically all other microwave sources where em oscillations are excited by a stationary electron beam. The process of self-excitation of em oscillations has been studied both theoretically and experimentally. It is shown that in pasotrons, during the beam current rise the amount of current entering the interaction space and the beam coupling to the em field vary. As a result, the self-excitation can proceed faster than in conventional microwave sources with similar operating parameters such as the operating frequency, cavity quality-factor and the beam current and voltage.

Electron gun for a multiple beam klystron with magnetic compression of the electron beams

DOEpatents

Ives, R. Lawrence; Tran, Hien T; Bui, Thuc; Attarian, Adam; Tallis, William; David, John; Forstall, Virginia; Andujar, Cynthia; Blach, Noah T; Brown, David B; Gadson, Sean E; Kiley, Erin M; Read, Michael

2013-10-01

A multi-beam electron gun provides a plurality N of cathode assemblies comprising a cathode, anode, and focus electrode, each cathode assembly having a local cathode axis and also a central cathode point defined by the intersection of the local cathode axis with the emitting surface of the cathode. Each cathode is arranged with its central point positioned in a plane orthogonal to a device central axis, with each cathode central point an equal distance from the device axis and with an included angle of 360/N between each cathode central point. The local axis of each cathode has a cathode divergence angle with respect to the central axis which is set such that the diverging magnetic field from a solenoidal coil is less than 5 degrees with respect to the projection of the local cathode axis onto a cathode reference plane formed by the device axis and the central cathode point, and the local axis of each cathode is also set such that the angle formed between the cathode reference plane and the local cathode axis results in minimum spiraling in the path of the electron beams in a homogenous magnetic field region of the solenoidal field generator.

Optical frequency shot-noise suppression in electron beams: Three-dimensional analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nause, A.; Dyunin, E.; Gover, A.

2010-05-15

A predicted effect of current shot-noise suppression at optical-frequencies in a drifting charged-particle-beam and the corresponding process of particles self-ordering are analyzed in a one-dimensional (1D) model and verified by three-dimensional numerical simulations. The analysis confirms the prediction of a 1D single mode Langmuir plasma wave model of longitudinal plasma oscillation in the beam, and it defines the regime of beam parameters in which this effect takes place. The suppression of relativistic beam shot noise can be utilized to enhance the coherence of free electron lasers and of any coherent radiation device using an electron beam.

Electron-beam lithography for micro and nano-optical applications

NASA Technical Reports Server (NTRS)

Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

2005-01-01

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

NASA Technical Reports Server (NTRS)

Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

2011-01-01

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Electron-beam induced nano-etching of suspended graphene

PubMed Central

Sommer, Benedikt; Sonntag, Jens; Ganczarczyk, Arkadius; Braam, Daniel; Prinz, Günther; Lorke, Axel; Geller, Martin

2015-01-01

Besides its interesting physical properties, graphene as a two-dimensional lattice of carbon atoms promises to realize devices with exceptional electronic properties, where freely suspended graphene without contact to any substrate is the ultimate, truly two-dimensional system. The practical realization of nano-devices from suspended graphene, however, relies heavily on finding a structuring method which is minimally invasive. Here, we report on the first electron beam-induced nano-etching of suspended graphene and demonstrate high-resolution etching down to ~7 nm for line-cuts into the monolayer graphene. We investigate the structural quality of the etched graphene layer using two-dimensional (2D) Raman maps and demonstrate its high electronic quality in a nano-device: A 25 nm-wide suspended graphene nanoribbon (GNR) that shows a transport gap with a corresponding energy of ~60 meV. This is an important step towards fast and reliable patterning of suspended graphene for future ballistic transport, nano-electronic and nano-mechanical devices. PMID:25586495

A range-based method to calibrate a magnetic spectrometer measuring the energy spectrum of the backward electron beam of a plasma focus.

PubMed

Ceccolini, E; Rocchi, F; Mostacci, D; Sumini, M; Tartari, A

2011-08-01

The electron beam emitted from the back of plasma focus devices is being studied as a radiation source for intraoperative radiation therapy applications. A plasma focus device is being developed for this purpose, and there is a need for characterizing its electron beam, particularly, insofar as the energy spectrum is concerned. The instrument used is a magnetic spectrometer. To calibrate this spectrometer, a procedure relying on the energy-range relation in Mylar® has been devised and applied. By measuring the transmission through increasing thicknesses of the material, electron energies could be assessed and compared to the spectrometer readings. Thus, the original calibration of the instrument has been extended to higher energies and also to better accuracy. Methods and results are presented.

Production of hard X rays in a plasma focus

NASA Technical Reports Server (NTRS)

Newman, C. E.; Petrosian, V.

1975-01-01

A model of a plasma focus is examined wherein large axial electric fields are produced by an imploding current sheet during the final nanoseconds of the collapse phase and where the fields provide a mechanism for creating a beam of electrons of highly suprathermal energies. The expected bremsstrahlung radiation above 100 keV is calculated for such a beam, which has a power-law spectrum, both from electron-deuteron collisions in the focused plasma and when the beam reaches the wall of the device. It is concluded that, since the experimental results indicate little or no radiation above 100 keV originating in the walls, that the electrons in the beam must be decelerated after leaving the plasma and before reaching the wall. Comparisons with the results and the total energy of the device yield qualitative agreement with the expected angular distribution of hard X-rays and reasonable agreement with the total energy in accelerated electrons required to produce the observed total energy in hard X-rays by this mechanism.

Focused-electron-beam-induced processing (FEBIP) for emerging applications in carbon nanoelectronics

NASA Astrophysics Data System (ADS)

Fedorov, Andrei G.; Kim, Songkil; Henry, Mathias; Kulkarni, Dhaval; Tsukruk, Vladimir V.

2014-12-01

Focused-electron-beam-induced processing (FEBIP), a resist-free additive nanomanufacturing technique, is an actively researched method for "direct-write" processing of a wide range of structural and functional nanomaterials, with high degree of spatial and time-domain control. This article attempts to critically assess the FEBIP capabilities and unique value proposition in the context of processing of electronics materials, with a particular emphasis on emerging carbon (i.e., based on graphene and carbon nanotubes) devices and interconnect structures. One of the major hurdles in advancing the carbon-based electronic materials and device fabrication is a disjoint nature of various processing steps involved in making a functional device from the precursor graphene/CNT materials. Not only this multi-step sequence severely limits the throughput and increases the cost, but also dramatically reduces the processing reproducibility and negatively impacts the quality because of possible between-the-step contamination, especially for impurity-susceptible materials such as graphene. The FEBIP provides a unique opportunity to address many challenges of carbon nanoelectronics, especially when it is employed as part of an integrated processing environment based on multiple "beams" of energetic particles, including electrons, photons, and molecules. This avenue is promising from the applications' prospective, as such a multi-functional (electron/photon/molecule beam) enables one to define shapes (patterning), form structures (deposition/etching), and modify (cleaning/doping/annealing) properties with locally resolved control on nanoscale using the same tool without ever changing the processing environment. It thus will have a direct positive impact on enhancing functionality, improving quality and reducing fabrication costs for electronic devices, based on both conventional CMOS and emerging carbon (CNT/graphene) materials.

A Non-Neutral Plasma Device: Electron Beam Penning Trap

NASA Astrophysics Data System (ADS)

Zhuang, Ge; Liu, Wan-dong; Zheng, Jian; Fu, Cheng-jiang; Bai, Bo; Chi, Ji; Zhao, Kai; Xie, Jin-lin; Liang, Xiao-ping; Yu, Chang-xuan

1999-12-01

An electron beam Penning trap (EBPT) non- neutral plasma system, built to investigate the formation of a dense electron core with the density beyond Brillouin limit and possible application to fusion research, has been described. The density in the center of the EBPT has been verified to be up to 10 times of Brillouin density limit.

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

NASA Astrophysics Data System (ADS)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Simulation of therapeutic electron beam tracking through a non-uniform magnetic field using finite element method

PubMed Central

Tahmasebibirgani, Mohammad Javad; Maskani, Reza; Behrooz, Mohammad Ali; Zabihzadeh, Mansour; Shahbazian, Hojatollah; Fatahiasl, Jafar; Chegeni, Nahid

2017-01-01

Introduction In radiotherapy, megaelectron volt (MeV) electrons are employed for treatment of superficial cancers. Magnetic fields can be used for deflection and deformation of the electron flow. A magnetic field is composed of non-uniform permanent magnets. The primary electrons are not mono-energetic and completely parallel. Calculation of electron beam deflection requires using complex mathematical methods. In this study, a device was made to apply a magnetic field to an electron beam and the path of electrons was simulated in the magnetic field using finite element method. Methods A mini-applicator equipped with two neodymium permanent magnets was designed that enables tuning the distance between magnets. This device was placed in a standard applicator of Varian 2100 CD linear accelerator. The mini-applicator was simulated in CST Studio finite element software. Deflection angle and displacement of the electron beam was calculated after passing through the magnetic field. By determining a 2 to 5cm distance between two poles, various intensities of transverse magnetic field was created. The accelerator head was turned so that the deflected electrons became vertical to the water surface. To measure the displacement of the electron beam, EBT2 GafChromic films were employed. After being exposed, the films were scanned using HP G3010 reflection scanner and their optical density was extracted using programming in MATLAB environment. Displacement of the electron beam was compared with results of simulation after applying the magnetic field. Results Simulation results of the magnetic field showed good agreement with measured values. Maximum deflection angle for a 12 MeV beam was 32.9° and minimum deflection for 15 MeV was 12.1°. Measurement with the film showed precision of simulation in predicting the amount of displacement in the electron beam. Conclusion A magnetic mini-applicator was made and simulated using finite element method. Deflection angle and displacement of electron beam were calculated. With the method used in this study, a good prediction of the path of high-energy electrons was made before they entered the body. PMID:28607652

An electronic beam splitter realized with crossed graphene nanoribbons

NASA Astrophysics Data System (ADS)

Frederiksen, Thomas; Brandimarte, Pedro; Engelund, Mads; Papior, Nick; Garcia-Lekue, Aran; Sanchez-Portal, Daniel

Graphene nanoribbons (GNRs) are promising components in future nanoelectronics. We have explored a prototype 4-terminal semiconducting device formed by two crossed armchair GNRs (AGNRs) using state-of-the-art first-principles transport methods. We analyze in detail the roles of intersection angle, stacking order, inter-GNR separation, and finite voltages on the transport characteristics. Interestingly, when the AGNRs intersect at θ =60° , electrons injected from one terminal can be split into two outgoing waves with a tunable ratio around 50 % and with almost negligible back-reflection. The splitted electron wave is found to propagate partly straight across the intersection region in one ribbon and partly in one direction of the other ribbon, i.e., in analogy of an optical beam splitter. Our simulations further identify realistic conditions for which this semiconducting device can act as a mechanically controllable electronic beam splitter with possible applications in carbon-based quantum electronic circuits and electron optics. FP7-FET-ICT PAMS (610446), MAT2013-46593-C6-2-P, IT-756-13.

Collimated electron beam accelerated at 12 kV from a Penning discharge.

PubMed

Toader, D; Oane, M; Ticoş, C M

2015-01-01

A pulsed electron beam accelerated at 12 kV with a duration of 40 μs per pulse is obtained from a Penning discharge with a hollow anode and two cathodes. The electrons are extracted through a hole in one of the cathodes and focused by a pair of coils. The electron beam has a diameter of a few mm in the cross section, while the beam current reaches peak values of 400 mA, depending on the magnetic field inside the focussing coils. This relatively inexpensive and compact device is suitable for the irradiation of small material samples placed in high vacuum.

Simulation of 10 A electron-beam formation and collection for a high current electron-beam ion source

NASA Astrophysics Data System (ADS)

Kponou, A.; Beebe, E.; Pikin, A.; Kuznetsov, G.; Batazova, M.; Tiunov, M.

1998-02-01

Presented is a report on the development of an electron-beam ion source (EBIS) for the relativistic heavy ion collider at Brookhaven National Laboratory (BNL) which requires operating with a 10 A electron beam. This is approximately an order of magnitude higher current than in any existing EBIS device. A test stand is presently being designed and constructed where EBIS components will be tested. It will be reported in a separate paper at this conference. The design of the 10 A electron gun, drift tubes, and electron collector requires extensive computer simulations. Calculations have been performed at Novosibirsk and BNL using two different programs, SAM and EGUN. Results of these simulations will be presented.

An electron beam ion trap and source for re-acceleration of rare-isotope ion beams at TRIUMF

NASA Astrophysics Data System (ADS)

Blessenohl, M. A.; Dobrodey, S.; Warnecke, C.; Rosner, M. K.; Graham, L.; Paul, S.; Baumann, T. M.; Hockenbery, Z.; Hubele, R.; Pfeifer, T.; Ames, F.; Dilling, J.; Crespo López-Urrutia, J. R.

2018-05-01

Electron beam driven ionization can produce highly charged ions (HCIs) in a few well-defined charge states. Ideal conditions for this are maximally focused electron beams and an extremely clean vacuum environment. A cryogenic electron beam ion trap fulfills these prerequisites and delivers very pure HCI beams. The Canadian rare isotope facility with electron beam ion source-electron beam ion sources developed at the Max-Planck-Institut für Kernphysik (MPIK) reaches already for a 5 keV electron beam and a current of 1 A with a density in excess of 5000 A/cm2 by means of a 6 T axial magnetic field. Within the trap, the beam quickly generates a dense HCI population, tightly confined by a space-charge potential of the order of 1 keV times the ionic charge state. Emitting HCI bunches of ≈107 ions at up to 100 Hz repetition rate, the device will charge-breed rare-isotope beams with the mass-over-charge ratio required for re-acceleration at the Advanced Rare IsotopE Laboratory (ARIEL) facility at TRIUMF. We present here its design and results from commissioning runs at MPIK, including X-ray diagnostics of the electron beam and charge-breeding process, as well as ion injection and HCI-extraction measurements.

UNDULATOR-BASED LASER WAKEFIELD ACCELERATOR ELECTRON BEAM DIAGNOSTIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M.S.; Fawley, W.M.; Leemans, W. P.

to couple the THUNDER undulator to the LOASIS Lawrence Berkeley National Laboratory (LBNL) laser wakefield accelerator (LWFA). Currently the LWFA has achieved quasi-monoenergetic electron beams with energies up to 1 GeV. These ultra-short, high-peak-current, electron beams are ideal for driving a compact XUV free electron laser (FEL). Understanding the electron beam properties such as the energy spread and emittance is critical for achieving high quality light sources with high brightness. By using an insertion device such as an undulator and observing changes in the spontaneous emission spectrum, the electron beam energy spread and emittance can be measured with high precision.more » The initial experiments will use spontaneous emission from 1.5 m of undulator. Later experiments will use up to 5 m of undulator with a goal of a high gain, XUV FEL.« less

Catalac free electron laser

DOEpatents

Brau, Charles A.; Swenson, Donald A.; Boyd, Jr., Thomas J.

1982-01-01

A catalac free electron laser using a rf linac (catalac) which acts as a catalyst to accelerate an electron beam in an initial pass through the catalac and decelerate the electron beam during a second pass through the catalac. During the second pass through the catalac, energy is extracted from the electron beam and transformed to energy of the accelerating fields of the catalac to increase efficiency of the device. Various embodiments disclose the use of post linacs to add electron beam energy extracted by the wiggler and the use of supplementary catalacs to extract energy at various energy peaks produced by the free electron laser wiggler to further enhance efficiency of the catalac free electron laser. The catalac free electron laser can be used in conjunction with a simple resonator, a ring resonator or as an amplifier in conjunction with a master oscillator laser.

Catalac free electron laser

DOEpatents

Brau, C.A.; Swenson, D.A.; Boyd, T.J. Jr.

1979-12-12

A catalac free electron laser using a rf linac (catalac) which acts as a catalyst to accelerate an electron beam in an initial pass through the catalac and decelerate the electron beam during a second pass through the catalac is described. During the second pass through the catalac, energy is extracted from the electron beam and transformed to energy of the accelerating fields of the catalac to increase efficiency of the device. Various embodiments disclose the use of post linacs to add electron beam energy extracted by the wiggler and the use of supplementary catalacs to extract energy at various energy peaks produced by the free electron laser wiggler to further enhance efficiency of the catalac free electron laser. The catalac free electron laser can be used in conjunction with a simple resonator, a ring resonator, or as an amplifier in conjunction with a master oscillator laser.

Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Moon, Hye Ji; Ryu, Min Ki; Cho, Kyoung Ik; Yun, Eui-Jung; Bae, Byung Seong

2012-09-01

Under white light illumination, amorphous indium-gallium-zinc oxide (a-IGZO)-based thin-film transistors (TFTs) showed a large negative shift of threshold voltage of more than -15 V depending on the process conditions. We investigated the influences of both gate bias and white light illumination on device properties of IGZO-based TFTs untreated and treated with high-energy electron beam irradiation (HEEBI). The TFTs were treated with HEEBI in air at room temperature (RT), electron beam energy of 0.8 MeV, and a dose of 1×1014 electrons/cm2. The HEEBI-treated TFTs showed an improved stability under negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS) compared with non-HEEBI-treated TFTs, suggesting that the acceptor-like defects might be generated by HEEBI treatment near the valence band edge.

Effect of transverse nonuniformity of the rf field on the efficiency of microwave sources driven by linear electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nusinovich, G.S.; Sinitsyn, O.V.

This paper contains a simple analytical theory that allows one to evaluate the effect of transverse nonuniformity of the rf field on the interaction efficiency in various microwave sources driven by linear electron beams. The theory is, first, applied to the systems where the beams of cylindrical symmetry interact with rf fields of microwave circuits having Cartesian geometry. Also, various kinds of microwave devices driven by sheet electron beams (orotrons, clinotrons) are considered. The theory can be used for evaluating the efficiency of novel sources of coherent terahertz radiation.

Enhanced electron yield from laser-driven wakefield acceleration in high-Z gas jets.

PubMed

Mirzaie, Mohammad; Hafz, Nasr A M; Li, Song; Liu, Feng; He, Fei; Cheng, Ya; Zhang, Jie

2015-10-01

An investigation of the electron beam yield (charge) form helium, nitrogen, and neon gas jet plasmas in a typical laser-plasma wakefield acceleration experiment is carried out. The charge measurement is made by imaging the electron beam intensity profile on a fluorescent screen into a charge coupled device which was cross-calibrated with an integrated current transformer. The dependence of electron beam charge on the laser and plasma conditions for the aforementioned gases are studied. We found that laser-driven wakefield acceleration in low Z-gas jet targets usually generates high-quality and well-collimated electron beams with modest yields at the level of 10-100 pC. On the other hand, filamentary electron beams which are observed from high-Z gases at higher densities reached much higher yields. Evidences for cluster formation were clearly observed in the nitrogen gas jet target, where we received the highest electron beam charge of ∼1.7 nC. Those intense electron beams will be beneficial for the applications on the generation of bright X-rays, gamma rays radiations, and energetic positrons via the bremsstrahlung or inverse-scattering processes.

Three-Dimensional Electron Optics Model Developed for Traveling-Wave Tubes

NASA Technical Reports Server (NTRS)

Kory, Carol L.

2000-01-01

A three-dimensional traveling-wave tube (TWT) electron beam optics model including periodic permanent magnet (PPM) focusing has been developed at the NASA Glenn Research Center at Lewis Field. This accurate model allows a TWT designer to develop a focusing structure while reducing the expensive and time-consuming task of building the TWT and hot-testing it (with the electron beam). In addition, the model allows, for the first time, an investigation of the effect on TWT operation of the important azimuthally asymmetric features of the focusing stack. The TWT is a vacuum device that amplifies signals by transferring energy from an electron beam to a radiofrequency (RF) signal. A critically important component is the focusing structure, which keeps the electron beam from diverging and intercepting the RF slow wave circuit. Such an interception can result in excessive circuit heating and decreased efficiency, whereas excessive growth in the beam diameter can lead to backward wave oscillations and premature saturation, indicating a serious reduction in tube performance. The most commonly used focusing structure is the PPM stack, which consists of a sequence of cylindrical iron pole pieces and opposite-polarity magnets. Typically, two-dimensional electron optics codes are used in the design of magnetic focusing devices. In general, these codes track the beam from the gun downstream by solving equations of motion for the electron beam in static-electric and magnetic fields in an azimuthally symmetric structure. Because these two-dimensional codes cannot adequately simulate a number of important effects, the simulation code MAFIA (solution of Maxwell's equations by the Finite-Integration-Algorithm) was used at Glenn to develop a three-dimensional electron optics model. First, a PPM stack was modeled in three dimensions. Then, the fields obtained using the magnetostatic solver were loaded into a particle-in-cell solver where the fully three-dimensional behavior of the beam was simulated in the magnetic focusing field. For the first time, the effects of azimuthally asymmetric designs and critical azimuthally asymmetric characteristics of the focusing stack (such as shunts, C-magnets, or magnet misalignment) on electron beam behavior have been investigated. A cutaway portion of a simulated electron beam focused by a PPM stack is illustrated.

Physical characterization of single convergent beam device for teletherapy: theoretical and Monte Carlo approach.

PubMed

Figueroa, R G; Valente, M

2015-09-21

The main purpose of this work is to determine the feasibility and physical characteristics of a new teletherapy device of radiation therapy based on the application of a convergent x-ray beam of energies like those used in radiotherapy providing highly concentrated dose delivery to the target. We have denominated it Convergent Beam Radio Therapy (CBRT). Analytical methods are developed first in order to determine the dosimetry characteristic of an ideal convergent photon beam in a hypothetical water phantom. Then, using the PENELOPE Monte Carlo code, a similar convergent beam that is applied to the water phantom is compared with that of the analytical method. The CBRT device (Converay(®)) is designed to adapt to the head of LINACs. The converging beam photon effect is achieved thanks to the perpendicular impact of LINAC electrons on a large thin spherical cap target where Bremsstrahlung is generated (high-energy x-rays). This way, the electrons impact upon various points of the cap (CBRT condition), aimed at the focal point. With the X radiation (Bremsstrahlung) directed forward, a system of movable collimators emits many beams from the output that make a virtually definitive convergent beam. Other Monte Carlo simulations are performed using realistic conditions. The simulations are performed for a thin target in the shape of a large, thin, spherical cap, with an r radius of around 10-30 cm and a curvature radius of approximately 70 to 100 cm, and a cubed water phantom centered in the focal point of the cap. All the interaction mechanisms of the Bremsstrahlung radiation with the phantom are taken into consideration for different energies and cap thicknesses. Also, the magnitudes of the electric and/or magnetic fields, which are necessary to divert clinical-use electron beams (0.1 to 20 MeV), are determined using electromagnetism equations with relativistic corrections. This way the above-mentioned beam is manipulated and guided for its perpendicular impact upon the spherical cap. The first results that were achieved show in-depth dose peaks, having shapes qualitatively similar to those from hadrontherapy techniques. The obtained results demonstrate that in-depth dose peaks are generated at the focus point or isocenter. These results are consistent with those obtained with Monte Carlo codes. The peak-focus is independent of the energy of the photon beam, though its intensity is not. The realistic results achieved with the Monte Carlo code show that the Bremsstrahlung generated on the thin cap is mainly directed towards the focus point. The aperture angle at each impact point depends primarily on the energy beam, the atomic number Z and the thickness of the target. There is also a poly-collimator coaxial to the cap or ring with many holes, permitting a clean convergent-exit x-ray beam with a dose distribution that is similar to the ideal case. The electric and magnetic fields needed to control the deflection of the electron beams in the CBRT geometry are highly feasible using specially designed electric and/or magnetic devices that, respectively, have voltage and current values that are technically achievable. However, it was found that magnetic devices represent a more suitable option for electron beam control, especially at high energies. The main conclusion is that the development of such a device is feasible. Due to its features, this technology might be considered a powerful new tool for external radiotherapy with photons.

Estimation of electron temperature and radiation emission of a low energy (2.2 kJ) plasma focus device

NASA Astrophysics Data System (ADS)

Khan, M. Z.; Yap, S. L.; Wong, C. S.

2014-01-01

Radiation emission in a 2.2 kJ Mather-type plasma focus device is investigated using a five channel BPX65 PIN diode spectrometer. At optimum condition, radiation emission from the system is found to be strongly influenced in hollow anode and filling gas pressure. Maximum X-ray yield in 4π sr has been obtained in case of hollow anode in argon gas medium due to interaction of electron beam. Results indicate that an appropriate design of anode can enhance radiation emission by more intense interaction of expected electron beam with hollow anode. The outcome is helpful to design a plasma focus with enhanced X-ray generation with improved shot-to-shot reproducibility in plasma focus device.

Reduction of ion thermal diffusivity associated with the transition of the radial electric field in neutral-beam-heated plasmas in the large helical device.

PubMed

Ida, K; Funaba, H; Kado, S; Narihara, K; Tanaka, K; Takeiri, Y; Nakamura, Y; Ohyabu, N; Yamazaki, K; Yokoyama, M; Murakami, S; Ashikawa, N; deVries, P C; Emoto, M; Goto, M; Idei, H; Ikeda, K; Inagaki, S; Inoue, N; Isobe, M; Itoh, K; Kaneko, O; Kawahata, K; Khlopenkov, K; Komori, A; Kubo, S; Kumazawa, R; Liang, Y; Masuzaki, S; Minami, T; Miyazawa, J; Morisaki, T; Morita, S; Mutoh, T; Muto, S; Nagayama, Y; Nakanishi, H; Nishimura, K; Noda, N; Notake, T; Kobuchi, T; Ohdachi, S; Ohkubo, K; Oka, Y; Osakabe, M; Ozaki, T; Pavlichenko, R O; Peterson, B J; Sagara, A; Saito, K; Sakakibara, S; Sakamoto, R; Sanuki, H; Sasao, H; Sasao, M; Sato, K; Sato, M; Seki, T; Shimozuma, T; Shoji, M; Suzuki, H; Sudo, S; Tamura, N; Toi, K; Tokuzawa, T; Torii, Y; Tsumori, K; Yamamoto, T; Yamada, H; Yamada, I; Yamaguchi, S; Yamamoto, S; Yoshimura, Y; Watanabe, K Y; Watari, T; Hamada, Y; Motojima, O; Fujiwara, M

2001-06-04

Recent large helical device experiments revealed that the transition from ion root to electron root occurred for the first time in neutral-beam-heated discharges, where no nonthermal electrons exist. The measured values of the radial electric field were found to be in qualitative agreement with those estimated by neoclassical theory. A clear reduction of ion thermal diffusivity was observed after the mode transition from ion root to electron root as predicted by neoclassical theory when the neoclassical ion loss is more dominant than the anomalous ion loss.

Apparatus for maintaining alignment of a shrinking weld joint in an electron-beam welding operation

DOEpatents

Trent, Jett B.; Murphy, Jimmy L.

1981-01-01

The present invention is directed to an apparatus for automatically maintaining a shrinking weld joint in alignment with an electron beam during an electron-beam multipass-welding operation. The apparatus utilizes a biasing device for continually urging a workpiece-supporting face plate away from a carriage mounted base that rotatably supports the face plate. The extent of displacement of the face plate away from the base is indicative of the shrinkage occuring in the weld joint area. This displacement is measured and is used to move the base on the carriage a distance equal to one-half the displacement for aligning the weld joint with the electron beam during each welding pass.

Plasma wake field XUV radiation source

DOEpatents

Prono, Daniel S.; Jones, Michael E.

1997-01-01

A XUV radiation source uses an interaction of electron beam pulses with a gas to create a plasma radiator. A flowing gas system (10) defines a circulation loop (12) with a device (14), such as a high pressure pump or the like, for circulating the gas. A nozzle or jet (16) produces a sonic atmospheric pressure flow and increases the density of the gas for interacting with an electron beam. An electron beam is formed by a conventional radio frequency (rf) accelerator (26) and electron pulses are conventionally formed by a beam buncher (28). The rf energy is thus converted to electron beam energy, the beam energy is used to create and then thermalize an atmospheric density flowing gas to a fully ionized plasma by interaction of beam pulses with the plasma wake field, and the energetic plasma then loses energy by line radiation at XUV wavelengths Collection and focusing optics (18) are used to collect XUV radiation emitted as line radiation when the high energy density plasma loses energy that was transferred from the electron beam pulses to the plasma.

Application accelerator system having bunch control

DOEpatents

Wang, Dunxiong; Krafft, Geoffrey Arthur

1999-01-01

An application accelerator system for monitoring the gain of a free electron laser. Coherent Synchrotron Radiation (CSR) detection techniques are used with a bunch length monitor for ultra short, picosec to several tens of femtosec, electron bunches. The monitor employs an application accelerator, a coherent radiation production device, an optical or beam chopping device, an infrared radiation collection device, a narrow-banding filter, an infrared detection device, and a control.

Facilitating Integration of Electron Beam Lithography Devices with Interactive Videodisc, Computer-Based Simulation and Job Aids.

ERIC Educational Resources Information Center

Von Der Linn, Robert Christopher

A needs assessment of the Grumman E-Beam Systems Group identified the requirement for additional skill mastery for the engineers who assemble, integrate, and maintain devices used to manufacture integrated circuits. Further analysis of the tasks involved led to the decision to develop interactive videodisc, computer-based job aids to enable…

Development of a Hard X-ray Beam Position Monitor for Insertion Device Beams at the APS

NASA Astrophysics Data System (ADS)

Decker, Glenn; Rosenbaum, Gerd; Singh, Om

2006-11-01

Long-term pointing stability requirements at the Advanced Photon Source (APS) are very stringent, at the level of 500 nanoradians peak-to-peak or better over a one-week time frame. Conventional rf beam position monitors (BPMs) close to the insertion device source points are incapable of assuring this level of stability, owing to mechanical, thermal, and electronic stability limitations. Insertion device gap-dependent systematic errors associated with the present ultraviolet photon beam position monitors similarly limit their ability to control long-term pointing stability. We report on the development of a new BPM design sensitive only to hard x-rays. Early experimental results will be presented.

Theory and simulation of ion noise in microwave tubes

NASA Astrophysics Data System (ADS)

Manheimer, W. M.; Freund, H. P.; Levush, B.; Antonsen, T. M.

2001-01-01

Since there is always some ambient gas in electron beam devices, background ionization is ubiquitous. For long pulse times, the electrostatic potentials associated with this ionization can reach significant levels and give rise to such observed phenomena as phase noise in microwave tubes. This noise is usually associated with the motion of ions in the device; therefore, it is called ion noise. It often manifests itself as a slow phase fluctuation on the output signal. Observations of noise in microwave tubes such as coupled-cavity traveling wave tubes (CC-TWTs) and klystrons have been discussed in the literature. In this paper, a hybrid model is discussed in which the electron beam is described by the beam envelope equation, and the ions generated by beam ionization are treated as discrete particles using the one-dimensional equations of motion. The theoretical model provides good qualitative as well as reasonable quantitative insight into the origin of ion noise phenomena. The numerical results indicate that the model reproduces the salient features of the phase oscillations observed experimentally. That is, the scaling of the frequency of the phase oscillations with gas pressure in the device and the sensitive dependence of the phase oscillations on the focusing magnetic field. Two distinct time scales are observed in simulation. The fastest time scale oscillation is related to the bounce motion of ions in the axial potential wells formed by the scalloping of the electron beam. Slower sawtooth oscillations are observed to correlate with the well-to-well interactions induced by the ion coupling to the electron equilibrium. These oscillations are also correlated with ion dumping to the cathode or collector. As a practical matter, simulations indicate that the low frequency oscillations can be reduced significantly by using a well-matched electron beam propagating from the electron gun into the interaction circuit.

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

NASA Technical Reports Server (NTRS)

Topich, J. A.

1978-01-01

A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

The Experimental Study of Novel Pseudospark Hollow Cathode Plasma Electron Gun

NASA Astrophysics Data System (ADS)

Gu, Xiaowei; Meng, Lin; Sun, Yiqin; Yu, Xinhua

2008-11-01

The high-power microwave devices with plasma-filled have unique properties. One of the major problems associated with plasma-filled microwave sources is that ions from the plasma drift toward the gun regions of the tube. This bombardment is particularly dangerous for the gun, where high-energy ion impacts can damage the cathode surface and degrade its electron emission capabilities. One of the techniques investigated to mitigate this issue is to replace the material cathode with plasma cathode. Now, we study the novel electron gun (E-gun) that can be suitable for high power microwave device applications, adopting two forms of discharge channel, 1: a single hole channel, the structure can produce a solid electron beam; 2: porous holes channel, the structure can generate multiple electronic injection which is similar to the annular electron beam.

Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Bhattacharyya, V.

2018-05-01

Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.

Multiple double cross-section transmission electron microscope sample preparation of specific sub-10 nm diameter Si nanowire devices.

PubMed

Gignac, Lynne M; Mittal, Surbhi; Bangsaruntip, Sarunya; Cohen, Guy M; Sleight, Jeffrey W

2011-12-01

The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

DOE PAGES

Han, Myung-Geun; Garlow, Joseph A.; Marshall, Matthew S. J.; ...

2017-03-23

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fieldsmore » and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.« less

Application accelerator system having bunch control

DOEpatents

Wang, D.; Krafft, G.A.

1999-06-22

An application accelerator system for monitoring the gain of a free electron laser is disclosed. Coherent Synchrotron Radiation (CSR) detection techniques are used with a bunch length monitor for ultra short, picosec to several tens of femtosec, electron bunches. The monitor employs an application accelerator, a coherent radiation production device, an optical or beam chopping device, an infrared radiation collection device, a narrow-banding filter, an infrared detection device, and a control. 1 fig.

Generation of a spin-polarized electron beam by multipole magnetic fields.

PubMed

Karimi, Ebrahim; Grillo, Vincenzo; Boyd, Robert W; Santamato, Enrico

2014-03-01

The propagation of an electron beam in the presence of transverse magnetic fields possessing integer topological charges is presented. The spin-magnetic interaction introduces a nonuniform spin precession of the electrons that gains a space-variant geometrical phase in the transverse plane proportional to the field's topological charge, whose handedness depends on the input electron's spin state. A combination of our proposed device with an electron orbital angular momentum sorter can be utilized as a spin-filter of electron beams in a mid-energy range. We examine these two different configurations of a partial spin-filter generator numerically. The results of this analysis could prove useful in the design of an improved electron microscope. Copyright © 2013 Elsevier B.V. All rights reserved.

Fabrication of plasmonic nanopore by using electron beam irradiation for optical bio-sensor

NASA Astrophysics Data System (ADS)

Choi, Seong Soo; Park, Myoung Jin; Han, Chul Hee; Oh, Seh Joong; Park, Nam Kyou; Park, Doo Jae; Choi, Soo Bong; Kim, Yong-Sang

2017-05-01

The Au nano-hole surrounded by the periodic nano-patterns would provide the enhanced optical intensity. Hence, the nano-hole surrounded with periodic groove patterns can be utilized as single molecule nanobio optical sensor device. In this report, the nano-hole on the electron beam induced membrane surrounded by periodic groove patterns were fabricated by focused ion beam technique (FIB), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). Initially, the Au films with three different thickness of 40 nm, 60 nm, and 200 nm were deposited on the SiN film by using an electron beam sputter-deposition technique, followed by removal of the supporting SiN film. The nanopore was formed on the electron beam induced membrane under the FESEM electron beam irradiation. Nanopore formation inside the Au aperture was controlled down to a few nanometer, by electron beam irradiations. The optical intensities from the biomolecules on the surfaces including Au coated pyramid with periodic groove patterns were investigated via surface enhanced Raman spectroscopy (SERS). The fabricated nanopore surrounded by periodic patterns can be utilized as a next generation single molecule bio optical sensor.

Laser-powered dielectric-structures for the production of high-brightness electron and x-ray beams

NASA Astrophysics Data System (ADS)

Travish, Gil; Yoder, Rodney B.

2011-05-01

Laser powered accelerators have been under intensive study for the past decade due to their promise of high gradients and leveraging of rapid technological progress in photonics. Of the various acceleration schemes under examination, those based on dielectric structures may enable the production of relativistic electron beams in breadbox sized systems. When combined with undulators having optical-wavelength periods, these systems could produce high brilliance x-rays which find application in, for instance, medical and industrial imaging. These beams also may open the way for table-top atto-second sciences. Development and testing of these dielectric structures faces a number of challenges including complex beam dynamics, new demands on lasers and optical coupling, beam injection schemes, and fabrication. We describe one approach being pursued at UCLA-the Micro Accelerator Platform (MAP). A structure similar to the MAP has also been designed which produces periodic deflections and acts as an undulator for radiation production, and the prospects for this device will be considered. The lessons learned from the multi-year effort to realize these devices will be presented. Challenges remain with acceleration of sub-relativistic beams, focusing, beam phase stability and extension of these devices to higher beam energies. Our progress in addressing these hurdles will be summarized. Finally, the demands on laser technology and optical coupling will be detailed.

A Computer-Based, Interactive Videodisc Job Aid and Expert System for Electron Beam Lithography Integration and Diagnostic Procedures.

ERIC Educational Resources Information Center

Stevenson, Kimberly

This master's thesis describes the development of an expert system and interactive videodisc computer-based instructional job aid used for assisting in the integration of electron beam lithography devices. Comparable to all comprehensive training, expert system and job aid development require a criterion-referenced systems approach treatment to…

Sources of Emittance in RF Photocathode Injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dowell, David

2016-12-11

Advances in electron beam technology have been central to creating the current generation of x-ray free electron lasers and ultra-fast electron microscopes. These once exotic devices have become essential tools for basic research and applied science. One important beam technology for both is the electron source which, for many of these instruments, is the photocathode RF gun. The invention of the photocathode gun and the concepts of emittance compensation and beam matching in the presence of space charge and RF forces have made these high-quality beams possible. Achieving even brighter beams requires a taking a finer resolution view of themore » electron dynamics near the cathode during photoemission and the initial acceleration of the beam. In addition, the high brightness beam is more sensitive to degradation by the optical aberrations of the gun’s RF and magnetic lenses. This paper discusses these topics including the beam properties due to fundamental photoemission physics, space charge effects close to the cathode, and optical distortions introduced by the RF and solenoid fields. Analytic relations for these phenomena are derived and compared with numerical simulations.« less

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Conceptual design of hollow electron lenses for beam halo control in the Large Hadron Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stancari, Giulio; Previtali, Valentina; Valishev, Alexander

Collimation with hollow electron beams is a technique for halo control in high-power hadron beams. It is based on an electron beam (possibly pulsed or modulated in intensity) guided by strong axial magnetic fields which overlaps with the circulating beam in a short section of the ring. The concept was tested experimentally at the Fermilab Tevatron collider using a hollow electron gun installed in one of the Tevatron electron lenses. We are proposing a conceptual design for applying this technique to the Large Hadron Collider at CERN. A prototype hollow electron gun for the LHC was built and tested. Themore » expected performance of the hollow electron beam collimator was based on Tevatron experiments and on numerical tracking simulations. Halo removal rates and enhancements of halo diffusivity were estimated as a function of beam and lattice parameters. Proton beam core lifetimes and emittance growth rates were checked to ensure that undesired effects were suppressed. Hardware specifications were based on the Tevatron devices and on preliminary engineering integration studies in the LHC machine. Required resources and a possible timeline were also outlined, together with a brief discussion of alternative halo-removal schemes and of other possible uses of electron lenses to improve the performance of the LHC.« less

Graphene electron cannon: High-current edge emission from aligned graphene sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jianlong; Li, Nannan; Guo, Jing

2014-01-13

High-current field emitters are made by graphene paper consist of aligned graphene sheets. Field emission luminance pattern shows that their electron beams can be controlled by rolling the graphene paper from sheet to cylinder. These specific electron beams would be useful to vacuum devices and electron beam lithograph. To get high-current emission, the graphene paper is rolled to array and form graphene cannon. Due to aligned emission array, graphene cannon have high emission current. Besides high emission current, the graphene cannon is also tolerable with excellent emission stability. With good field emission properties, these aligned graphene emitters bring application insight.

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

NASA Astrophysics Data System (ADS)

Carvalho, Daniel; Müller-Caspary, Knut; Schowalter, Marco; Grieb, Tim; Mehrtens, Thorsten; Rosenauer, Andreas; Ben, Teresa; García, Rafael; Redondo-Cubero, Andrés; Lorenz, Katharina; Daudin, Bruno; Morales, Francisco M.

2016-06-01

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

Development of high damage threshold multilayer thin film beam combiner for laser application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nand, Mangla, E-mail: mnand@rrcat.gov.in; Babita,; Jena, S.

2016-05-23

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Development of high damage threshold multilayer thin film beam combiner for laser application

NASA Astrophysics Data System (ADS)

Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

2016-05-01

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Conceptual Design of Electron-Beam Generated Plasma Tools

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; Dorf, Leonid; Collins, Ken; Boris, David; Walton, Scott

2015-09-01

Realization of the next generation of high-density nanostructured devices is predicated on etching features with atomic layer resolution, no damage and high selectivity. High energy electron beams generate plasmas with unique features that make them attractive for applications requiring monolayer precision. In these plasmas, high energy beam electrons ionize the background gas and the resultant daughter electrons cool to low temperatures via collisions with gas molecules and lack of any accelerating fields. For example, an electron temperature of <0.6 eV with densities comparable to conventional plasma sources can be obtained in molecular gases. The chemistry in such plasmas can significantly differ from RF plasmas as the ions/radicals are produced primarily by beam electrons rather than those in the tail of a low energy distribution. In this work, we will discuss the conceptual design of an electron beam based plasma processing system. Plasma properties will be discussed for Ar, Ar/N2, and O2 plasmas using a computational plasma model, and comparisons made to experiments. The fluid plasma model is coupled to a Monte Carlo kinetic model for beam electrons which considers gas phase collisions and the effect of electric and magnetic fields on electron motion. The impact of critical operating parameters such as magnetic field, beam energy, and gas pressure on plasma characteristics in electron-beam plasma processing systems will be discussed. Partially supported by the NRL base program.

Universal main magnetic focus ion source for production of highly charged ions

NASA Astrophysics Data System (ADS)

Ovsyannikov, V. P.; Nefiodov, A. V.; Levin, A. A.

2017-10-01

A novel room-temperature compact ion source has been developed for the efficient production of atomic ions by means of an electron beam with energy Ee and current density je controllable within wide ranges (100 eV ≲Ee ≲ 60 keV, 10 A/cm2 ≲je ≲ 20 kA/cm2). In the first experiments, the X-ray emission of Ir64+ ions has been measured. Based on a combination of two different techniques, the device can operate both as conventional Electron Beam Ion Source/Trap and novel Main Magnetic Focus Ion Source. The tunable electron-optical system allows for realizing laminar and turbulent electron flows in a single experimental setup. The device is intended primarily for fundamental and applied research at standard university laboratories.

Shielded capacitive electrode

DOEpatents

Kireeff Covo, Michel

2013-07-09

A device is described, which is sensitive to electric fields, but is insensitive to stray electrons/ions and unlike a bare, exposed conductor, it measures capacitively coupled current while rejecting currents due to charged particle collected or emitted. A charged particle beam establishes an electric field inside the beam pipe. A grounded metallic box with an aperture is placed in a drift region near the beam tube radius. The produced electric field that crosses the aperture generates a fringe field that terminates in the back surface of the front of the box and induces an image charge. An electrode is placed inside the grounded box and near the aperture, where the fringe fields terminate, in order to couple with the beam. The electrode is negatively biased to suppress collection of electrons and is protected behind the front of the box, so the beam halo cannot directly hit the electrode and produce electrons. The measured signal shows the net potential (positive ion beam plus negative electrons) variation with time, as it shall be observed from the beam pipe wall.

In situ TEM observation of preferential amorphization in single crystal Si nanowire

NASA Astrophysics Data System (ADS)

Su, Jiangbin; Zhu, Xianfang

2018-06-01

The nanoinstability of a single crystal Si nanowire under electron beam irradiation was in situ investigated at room temperature by the transmission electron microscopy technique. It was observed that the Si nanowire amorphized preferentially from the surface towards the center, with the increasing of the electron dose. In contrast, in the center of the Si nanowire the amorphization seemed much more difficult, being accompanied by the rotation of crystal grains and the compression of d-spacing. Such a preferential amorphization, which is athermally induced by the electron beam irradiation, can be well accounted for by our proposed concepts of the nanocurvature effect and the energetic beam-induced athermal activation effect, while the classical knock-on mechanism and the electron beam heating effect seem inadequate to explain these processes. Furthermore, the findings revealed the difference of amorphization between a Si nanowire and a Si film under electron beam irradiation. Also, the findings have important implications for the nanoinstability and nanoprocessing of future Si nanowire-based devices.

In situ TEM observation of preferential amorphization in single crystal Si nanowire.

PubMed

Su, Jiangbin; Zhu, Xianfang

2018-06-08

The nanoinstability of a single crystal Si nanowire under electron beam irradiation was in situ investigated at room temperature by the transmission electron microscopy technique. It was observed that the Si nanowire amorphized preferentially from the surface towards the center, with the increasing of the electron dose. In contrast, in the center of the Si nanowire the amorphization seemed much more difficult, being accompanied by the rotation of crystal grains and the compression of d-spacing. Such a preferential amorphization, which is athermally induced by the electron beam irradiation, can be well accounted for by our proposed concepts of the nanocurvature effect and the energetic beam-induced athermal activation effect, while the classical knock-on mechanism and the electron beam heating effect seem inadequate to explain these processes. Furthermore, the findings revealed the difference of amorphization between a Si nanowire and a Si film under electron beam irradiation. Also, the findings have important implications for the nanoinstability and nanoprocessing of future Si nanowire-based devices.

Suppression of shot noise and spontaneous radiation in electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litvinenko,V.

2009-08-23

Shot noise in the electron beam distribution is the main source of noise in high-gain FEL amplifiers, which may affect applications ranging from single- and multi-stage HGHG FELs to an FEL amplifier for coherent electron cooling. This noise also imposes a fundamental limit of about 10{sup 6} on FEL gain, after which SASE FELs saturate. There are several advantages in strongly suppressing this shot noise in the electron beam, and the corresponding spontaneous radiation. For more than a half-century, a traditional passive method has been used successfully in practical low-energy microwave electronic devices to suppress shot noise. Recently, it wasmore » proposed for this purpose in FELs. However, being passive, the method has some significant limitations and is hardly suitable for the highly inhomogeneous beams of modern high-gain FELs. I present a novel active method of suppressing, by many orders-of-magnitude, the shot noise in relativistic electron beams. I give a theoretical description of the process, and detail its fundamental limitation.« less

The path to exploring physics in advanced devices with a heavy ion beam probe

NASA Astrophysics Data System (ADS)

Demers, D. R.; Fimognari, P. J.

2012-10-01

The scientific progression of alternative or advanced devices must be met with comparable diagnostic technologies. Heavy ion beam probe innovations from ongoing diagnostic development are meeting this challenge. The diagnostic is uniquely capable of measuring the radial electric field, critically important in stellarators, simultaneously with fluctuations of electron density and electric potential. HIBP measurements can also improve the understanding of edge physics in tokamaks and spherical tori. It can target issues associated with the pedestal region, including the mechanisms underlying the L-H transition, the onset and evolution of ELMs, and the evolution of the electron current density. Beam attenuation (and resulting low signal to noise levels), a challenge to operation on devices with large plasma cross-sections and high ne and Te, can be mitigated with greater beam energies and currents. Other application challenges, such as measurements of plasma fluctuations and profile variations with elevated temporal and spatial resolutions, can be achieved with innovative detectors. The scientific studies motivating the implementation of an HIBP on HSX, ASDEX-U, and W7-X will be presented along with preliminary scoping studies.

8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

NASA Astrophysics Data System (ADS)

Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

2018-06-01

The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

Broad-band beam buncher

DOEpatents

Goldberg, David A.; Flood, William S.; Arthur, Allan A.; Voelker, Ferdinand

1986-01-01

A broad-band beam buncher is disclosed, comprising an evacuated housing, an electron gun therein for producing an electron beam, a buncher cavity having entrance and exit openings through which the beam is directed, grids across such openings, a source providing a positive DC voltage between the cavity and the electron gun, a drift tube through which the electron beam travels in passing through such cavity, grids across the ends of such drift tube, gaps being provided between the drift tube grids and the entrance and exit grids, a modulator for supplying an ultrahigh frequency modulating signal to the drift tube for producing velocity modulation of the electrons in the beam, a drift space in the housing through which the velocity modulated electron beam travels and in which the beam is bunched, and a discharge opening from such drift tube and having a grid across such opening through which the bunched electron beam is discharged into an accelerator or the like. The buncher cavity and the drift tube may be arranged to constitute an extension of a coaxial transmission line which is employed to deliver the modulating signal from a signal source. The extended transmission line may be terminated in its characteristic impedance to afford a broad-band response and the device as a whole designed to effect broad-band beam coupling, so as to minimize variations of the output across the response band.

Three electron beams from a laser-plasma wakefield accelerator and the energy apportioning question

PubMed Central

Yang, X.; Brunetti, E.; Gil, D. Reboredo; Welsh, G. H.; Li, F. Y.; Cipiccia, S.; Ersfeld, B.; Grant, D. W.; Grant, P. A.; Islam, M. R.; Tooley, M. P.; Vieux, G.; Wiggins, S. M.; Sheng, Z. M.; Jaroszynski, D. A.

2017-01-01

Laser-wakefield accelerators are compact devices capable of delivering ultra-short electron bunches with pC-level charge and MeV-GeV energy by exploiting the ultra-high electric fields arising from the interaction of intense laser pulses with plasma. We show experimentally and through numerical simulations that a high-energy electron beam is produced simultaneously with two stable lower-energy beams that are ejected in oblique and counter-propagating directions, typically carrying off 5–10% of the initial laser energy. A MeV, 10s nC oblique beam is ejected in a 30°–60° hollow cone, which is filled with more energetic electrons determined by the injection dynamics. A nC-level, 100s keV backward-directed beam is mainly produced at the leading edge of the plasma column. We discuss the apportioning of absorbed laser energy amongst the three beams. Knowledge of the distribution of laser energy and electron beam charge, which determine the overall efficiency, is important for various applications of laser-wakefield accelerators, including the development of staged high-energy accelerators. PMID:28281679

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

NASA Astrophysics Data System (ADS)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; Dolgashev, Valery A.; Haase, Andrew; Fazio, Michael V.; Borchard, Philipp

2017-06-01

We report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at the 5th harmonic.

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE PAGES

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; ...

2017-06-26

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Scintillating fiber-based photon beam profiler for the Jefferson Lab tagged photon beam line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zorn, C.; Barbosa, F.J.; Freyberger, A.

2000-10-01

A scintillating fiber hodoscope has been built for use as a photon beam profiler in the bremsstrahlung tagged photon beam in Hall B of the Thomas Jefferson National Accelerator Facility (Jefferson Lab). The device consists of a linear array of 64 2-2 mm2 scintillating fibers glued to a corresponding set of light guide fibers. Both fiber types use double-clad technology for maximum intensity. The light guide fibers are gently bent into a square array of holes and air-gap coupled to four compact position-sensitive photomultipliers (16 channel Hamamatsu R5900-M16). Custom electronics amplifies and converts the analog outputs to ECL pulses whichmore » are counted by VME-based scalars. The device consisting of the fibers, photomultipliers, and electronics is sealed within a light-tight aluminum box. Two modules make up a beam imaging 2-D system. The system has been tested successfully during an experimental run« less

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors.

PubMed

Matsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Krüger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M; Bird, Jonathan P; Aoki, Nobuyuki

2016-10-05

Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS 2 ), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS 2 . Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS 2 bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations. A nanoscale potential barrier develops at the boundary between exposed and unexposed regions and may cause extrinsic variations in the resulting electrical characteristics exhibited by the transistor. The widespread use of electron-beam lithography in nanofabrication implies that the presence of such strain must be carefully considered when seeking to harness the potential of atomically thin transistors. At the same time, this work also promises the possibility of exploiting the strain as a means to achieve "bandstructure engineering" in such devices.

Electron beam fabrication of a microfluidic device for studying submicron-scale bacteria

PubMed Central

2013-01-01

Background Controlled restriction of cellular movement using microfluidics allows one to study individual cells to gain insight into aspects of their physiology and behaviour. For example, the use of micron-sized growth channels that confine individual Escherichia coli has yielded novel insights into cell growth and death. To extend this approach to other species of bacteria, many of whom have dimensions in the sub-micron range, or to a larger range of growth conditions, a readily-fabricated device containing sub-micron features is required. Results Here we detail the fabrication of a versatile device with growth channels whose widths range from 0.3 μm to 0.8 μm. The device is fabricated using electron beam lithography, which provides excellent control over the shape and size of different growth channels and facilitates the rapid-prototyping of new designs. Features are successfully transferred first into silicon, and subsequently into the polydimethylsiloxane that forms the basis of the working microfluidic device. We demonstrate that the growth of sub-micron scale bacteria such as Lactococcus lactis or Escherichia coli cultured in minimal medium can be followed in such a device over several generations. Conclusions We have presented a detailed protocol based on electron beam fabrication together with specific dry etching procedures for the fabrication of a microfluidic device suited to study submicron-sized bacteria. We have demonstrated that both Gram-positive and Gram-negative bacteria can be successfully loaded and imaged over a number of generations in this device. Similar devices could potentially be used to study other submicron-sized organisms under conditions in which the height and shape of the growth channels are crucial to the experimental design. PMID:23575419

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QWmore » devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.« less

Discrete monotron oscillator having one-half wavelength coaxial resonator with one-quarter wavelength gap spacing

DOEpatents

Carlsten, B.E.; Haynes, W.B.

1998-02-03

A discrete monotron oscillator for use in a high power microwave device is formed with a microwave oscillator having a half-wavelength resonant coaxial microwave cavity operating in fundamental TEM mode for microwave oscillation with an inner conductor defining a drift tube for propagating an electron beam and an outer conductor coaxial with the inner conductor. The inner conductor defines a modulating gap and an extraction gap downstream of the modulating gap. The modulating gap and the extraction gap connect the coaxial microwave cavity with the drift tube so that energy for the microwave oscillation is extracted from the electron beam at the extraction gap and modulates the electron beam at the modulating gap. For high power operation, an annular electron beam is used. 8 figs.

Discrete monotron oscillator having one-half wavelength coaxial resonator with one-quarter wavelength gap spacing

DOEpatents

Carlsten, Bruce E.; Haynes, William B.

1998-01-01

A discrete monotron oscillator for use in a high power microwave device is formed with a microwave oscillator having a half-wavelength resonant coaxial microwave cavity operating in fundamental TEM mode for microwave oscillation with an inner conductor defining a drift tube for propagating an electron beam and an outer conductor coaxial with the inner conductor. The inner conductor defines a modulating gap and an extraction gap downstream of the modulating gap. The modulating gap and the extraction gap connect the coaxial microwave cavity with the drift tube so that energy for the microwave oscillation is extracted from the electron beam at the extraction gap and modulates the electron beam at the modulating gap. For high power operation, an annular electron beam is used.

Low-energy electron-beam treatment as alternative for on-site sterilization of highly functionalized medical products - A feasibility study

NASA Astrophysics Data System (ADS)

Gotzmann, G.; Portillo, J.; Wronski, S.; Kohl, Y.; Gorjup, E.; Schuck, H.; Rögner, F. H.; Müller, M.; Chaberny, I. F.; Schönfelder, J.; Wetzel, C.

2018-09-01

Over the last decades, the medical device industry has grown significantly. Complex and highly functionalized medical devices and implants are being developed to improve patient treatment and to enhance their health-related quality of life. However, medical devices from this new generation often cannot be sterilized by standard methods such as autoclaving or sterilizing gases, as they are temperature sensitive, containing electronic components like sensors and microchips, or consist of polymers. Gamma irradiation for sterilization of such products is also problematic due to long processing times under highly reactive conditions resulting in material degradation or loss of functionality. Low-energy electron-beam treatment could enable irradiation sterilization of medical surfaces within seconds. This method is very fast in comparison to gamma irradiation because of its high dose rate and therefore degradation processes of polymers can be reduced or even prevented. Additionally, electron penetration depth can be precisely controlled to prevent damage of sensitive components like electronics and semiconductors. The presented study focuses on two key aspects: 1.) Can new and highly functionalized medical products in future be sterilized using low-energy electron-beam irradiation; and 2.) Is the low-energy electron-beam technology suitable to be set up on-site to speed up sterilization processing or make it available "just-in-time". To address these questions, different test specimens were chosen with complex geometry or electronic functional parts to gather information about the limitations and chances for this new approach. The test specimens were inoculated with clinical relevant test organisms (Pseudomonas aeruginosa) as well as with approved radiation resistant organisms (Deinococcus radiodurans and Bacillus pumilus) to prove the suitability of low-energy electron-beam treatment for the above-mentioned medical products. The calculation of the D10 value for B. pumilus revealed equal efficacy when compared to standard high-energy irradiation sterilization. All of the above-mentioned germs were successfully inactivated by low-energy electron-beam treatment when test specimens were inoculated with a germ load > 10^6 CFU and treated with doses ≥ 10 kGy (for B. pumilus and P. aeruginosa) and > 300 kGy (for D. radiodurans) respectively. As an example, for specialized electronic components to be sterilized, an impedance sensor for cell culture applications was sterilized and unimpaired functionality was demonstrated even after five repeated sterilization cycles to a total dose of 50 kGy. To address the second aspect of on-site suitability of this technology, the product handling for low-energy electron-beam treatment had to be adapted to minimize the size of the electron-beam facility. Therefore, a mini electron-beam source was used and a specialized sample holder and 3D-handling regime were developed to allow reproducible surface treatment for complex product geometries. Inactivation of B. pumilus inoculated medical screws (> 10^6 CFU) was successful using the developed handling procedure. In addition, a packaging material (PET12/PE50) for medical products was investigated for its suitability for low-energy irradiation sterilization. Biocompatibility assessment revealed the material to be eligible for this application as even overdoses did not impair the biocompatibility of the material. With these results, the principal suitability of low-energy electron-beam treatment for sterilization of medical products containing electronics like sensors is demonstrated. The low-energy technology and the specialized 3D-handling regime allow the on-site setup of the technology in hospitals, medical practices or any other point of care.

Operation SUN BEAM. Shot Small Boy, Project Officers’ Report. Project 2. 1. Initial Radiation Measurements

DTIC Science & Technology

1981-05-01

production 01 these gamma-rays and an experimental verification of their magnitude essential: 11) Tha transient radiation on electronics (TREE) work...Figure 2.6. It con- sisted of a scintillator, light pipe, photo sensitive device, and auxiliary electronic assembly. Arrangement of these elements in...types of mechanically interchangeable packages, consisting of a photosensitive device and auxiliary electronics , were available for each detector. (M

High power coaxial ubitron

NASA Astrophysics Data System (ADS)

Balkcum, Adam J.

In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along with MAGIC, are used to design a representative 200 MW, 40% efficient, X-band amplifier for linear accelerators and a 1 GW, 21% efficient, S-band oscillator for directed energy. The technique of axial mode profiling in the ubitron cavity oscillator is also proposed and shown to increase the simulated interaction efficiency to 46%. These devices are realizable and their experimental implementation, including electron beam formation and spurious mode suppression techniques, is discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kant, Deepender, E-mail: dkc@ceeri.ernet.in; Joshi, L. M.; Janyani, Vijay

The klystron is a well-known microwave amplifier which uses kinetic energy of an electron beam for amplification of the RF signal. There are some limitations of conventional single beam klystron such as high operating voltage, low efficiency and bulky size at higher power levels, which are very effectively handled in Multi Beam Klystron (MBK) that uses multiple low purveyance electron beams for RF interaction. Each beam propagates along its individual transit path through a resonant cavity structure. Multi-Beam klystron cavity design is a critical task due to asymmetric cavity structure and can be simulated by 3D code only. The presentmore » paper shall discuss the design of multi beam RF cavities for klystrons operating at 2856 MHz (S-band) and 5 GHz (C-band) respectively. The design approach uses some scaling laws for finding the electron beam parameters of the multi beam device from their single beam counter parts. The scaled beam parameters are then used for finding the design parameters of the multi beam cavities. Design of the desired multi beam cavity can be optimized through iterative simulations in CST Microwave Studio.« less

Analysis of a Novel Diffractive Scanning Wire Beam Position Monitor (BPM) for Discriminative Profiling of Electron Vs. X Ray Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tatchyn, Roman; /SLAC

2011-09-01

Recent numerical studies of Free Electron Lasers (FELs) operating in the Self Amplified Spontaneous Emission (SASE) regime indicate a large sensitivity of the gain to the degree of transverse overlap (and associated phase coherence) between the electron and photon beams traveling down the insertion device. Simulations of actual systems imply that accurate detection and correction for this relative loss of overlap, rather than correction for the absolute departure of the electron beam from a fixed axis, is the preferred function of an FEL amplifier's Beam Position Monitor (BPM) and corrector systems. In this note we propose a novel diffractive BPMmore » with the capability of simultaneously detecting and resolving the absolute (and relative) transverse positions and profiles of electron and x-ray beams co-propagating through an undulator. We derive the equations governing the performance of the BPM and examine its predicted performance for the SLAC Linac Coherent Light Source (LCLS), viz., for profiling multi-GeV electron bunches co-propagating with one-to-several-hundred keV x-ray beams. Selected research and development (r&d) tasks for fabricating and testing the proposed BPM are discussed.« less

Design and Development of Emittance Measurement Device by Using the Pepper-pot Technique

NASA Astrophysics Data System (ADS)

Pakluea, S.; Rimjaem, S.

2017-09-01

Transverse emittance of a charged particle beam is one of the most important properties that reveals the quality of the beam. It is related to charge density, transvers size and angular displacement of the beam in transverse phase space. There are several techniques to measure the transverse emittance value. One of practical methods is the pepper-pot technique, which can measure both horizontal and vertical emittance value in a single measurement. This research concentrates on development of a pepper-pot device to measure the transverse emittance of electron beam produced from an accelerator injector system, which consists of a thermionic cathode RF electron gun and an alpha magnet, at the Plasma and Beam Physics Research Facility, Chiang Mai University. Simulation of beam dynamics was conducted with programs PARMELA, ELEGANT and self-developed codes using C and MATLAB. The geometry, dimensions and location of the pepper-pot as well as its corresponding screen station position were included in the simulation. The result from this study will be used to design and develop a practical pepper-pot experimental station.

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Statistical process control for electron beam monitoring.

PubMed

López-Tarjuelo, Juan; Luquero-Llopis, Naika; García-Mollá, Rafael; Quirós-Higueras, Juan David; Bouché-Babiloni, Ana; Juan-Senabre, Xavier Jordi; de Marco-Blancas, Noelia; Ferrer-Albiach, Carlos; Santos-Serra, Agustín

2015-07-01

To assess the electron beam monitoring statistical process control (SPC) in linear accelerator (linac) daily quality control. We present a long-term record of our measurements and evaluate which SPC-led conditions are feasible for maintaining control. We retrieved our linac beam calibration, symmetry, and flatness daily records for all electron beam energies from January 2008 to December 2013, and retrospectively studied how SPC could have been applied and which of its features could be used in the future. A set of adjustment interventions designed to maintain these parameters under control was also simulated. All phase I data was under control. The dose plots were characterized by rising trends followed by steep drops caused by our attempts to re-center the linac beam calibration. Where flatness and symmetry trends were detected they were less-well defined. The process capability ratios ranged from 1.6 to 9.3 at a 2% specification level. Simulated interventions ranged from 2% to 34% of the total number of measurement sessions. We also noted that if prospective SPC had been applied it would have met quality control specifications. SPC can be used to assess the inherent variability of our electron beam monitoring system. It can also indicate whether a process is capable of maintaining electron parameters under control with respect to established specifications by using a daily checking device, but this is not practical unless a method to establish direct feedback from the device to the linac can be devised. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Preliminary research concerning the use of electron accelerators to improve the conservability and to extend the shelf-life of fruits and vegetables

NASA Astrophysics Data System (ADS)

Minea, R.; Oproiu, C.; Pascanu, S.; Matei, C.; Ferdes, O.

1996-06-01

The potential of ionizing radiation treatment for food preservation, shelf-life extension, control of microbial load and reduction of pathogenic microorganism was demonstrated. The irradiations were performed under normal conditions on the Institute of Physics and Technology for Radiation Device's linear electron accelerator, which has the following parameters: 5 μA mean beam current, 6 MeV electron mean energy, pulse period 3.5 μs and dose rates between 100-1500 Gy/min. This research project was aimed at assuring the consumer's acceptance for radiation-treated food and to obtain a significant reduction of food losses. We also propose a promising solution for the radiation processing of some bulk food products at the place of storage, consisting of a mobile electron accelerator. The main characteristics of the mobile electron accelerator are: electron energy 3 to 5 MeV, maximum beam power 5 kW, vertical electron beam; irradiation is possible both with electron beams and with bremsstrahlung. The results of our preliminary research lead to the conclusion that electron-beam irradiation and the use of electron accelerators is a promising solution for food preservation and food safety. Interesting future applications are outlined.

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL) parallel electron beam lithography configuration to repair damaged or missing carbon nanofiber cathodes. The I-V response and lithography results from EBID tungsten-based devices were comparable to CNF-based DEAL devices indicating a successful repair technique.

Tuning the third-order nonlinear optical properties of In:ZnO thin films by 8 MeV electron beam irradiation

NASA Astrophysics Data System (ADS)

Shettigar, Nayana; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Eljald, E. M.; Regragui, M.; Antony, Albin; Rao, Ashok; Sanjeev, Ganesh; Ajeyakashi, K. C.; Poornesh, P.

2017-11-01

We report the third-order nonlinear optical properties of electron beam treated Indium doped ZnO (Zn1-xInxO (x = 0.03) thin films at different dose rate. Zn1-xInxO (x = 0.03) thin films prepared by spray pyrolysis deposition technique were irradiated using 8 MeV electron beam at dose rates ranging from 1 kGy to 4 kGy. X-ray diffraction patterns were obtained to examine the structural changes, The transformation from sphalerite to wurtzite structure of ZnO was observed which indicates occurrence of structural changes due to irradiation. Morphology of irradiated thin films examined using atomic force microscopy (AFM) technique indicates the surface roughness varying with irradiation dose rate. The switching over from Saturable Absorption (SA) to Reverse Saturable Absorption (RSA) behaviour was noted when the irradiation dose rate was increased from 1 kGy to 4 kGy. The significant changes observed in the third-order nonlinear optical susceptibility χ(3) of the Zn1-xInxO (x = 0.03) thin films is attributed mainly due to electron beam irradiation. The study indicates that nonlinear optical parameters can be controlled by electron beam irradiation by choosing appropriate dose rate which is very much essential for device applications. Hence Zn1-xInxO (x = 0.03) materialize as a promising material for use in nonlinear optical device applications.

Parametric study of transport beam lines for electron beams accelerated by laser-plasma interaction

NASA Astrophysics Data System (ADS)

Scisciò, M.; Lancia, L.; Migliorati, M.; Mostacci, A.; Palumbo, L.; Papaphilippou, Y.; Antici, P.

2016-03-01

In the last decade, laser-plasma acceleration of high-energy electrons has attracted strong attention in different fields. Electrons with maximum energies in the GeV range can be laser-accelerated within a few cm using multi-hundreds terawatt (TW) lasers, yielding to very high beam currents at the source (electron bunches with up to tens-hundreds of pC in a few fs). While initially the challenge was to increase the maximum achievable electron energy, today strong effort is put in the control and usability of these laser-generated beams that still lack of some features in order to be used for applications where currently conventional, radio-frequency (RF) based, electron beam lines represent the most common and efficient solution. Several improvements have been suggested for this purpose, some of them acting directly on the plasma source, some using beam shaping tools located downstream. Concerning the latter, several studies have suggested the use of conventional accelerator magnetic devices (such as quadrupoles and solenoids) as an easy implementable solution when the laser-plasma accelerated beam requires optimization. In this paper, we report on a parametric study related to the transport of electron beams accelerated by laser-plasma interaction, using conventional accelerator elements and tools. We focus on both, high energy electron beams in the GeV range, as produced on petawatt (PW) class laser systems, and on lower energy electron beams in the hundreds of MeV range, as nowadays routinely obtained on commercially available multi-hundred TW laser systems. For both scenarios, our study allows understanding what are the crucial parameters that enable laser-plasma accelerators to compete with conventional ones and allow for a beam transport. We show that suitable working points require a tradeoff-combination between low beam divergence and narrow energy spread.

A 350 MHz, 200 kW CW, Multiple Beam Inductive Output Tube - Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

R.Lawrece Ives; George Collins; David Marsden Michael Read

2012-11-28

This program developed a 200 kW CW, 350 MHz, multiple beam inductive output tube (MBIOT) for driving accelerator cavities. The MBIOT operates at 30 kV with a gain of 23 dB. The estimated efficiency is 70%. The device uses seven electron beams, each transmitting 1.4 A of current. The tube is approximately six feet long and weighs approximately 400 lbs. The prototype device will be evaluated as a potential RF source for the Advanced Photon Source at Argonne National Laboratory (ANL). Because of issues related to delivery of the electron guns, it was not possible to complete assembly and testmore » of the MBIOT during the Phase II program. The device is being completed with support from Calabazas Creek Research, Inc., Communications & Power Industries, LLC. and the Naval Surface Weapons Center (NSWC) in Dahlgren, VA. The MBIOT will be initially tested at NSWC before delivery to ANL. The testing at NSWC is scheduled for February 2013.« less

A novel coaxial Ku-band transit radiation oscillator without external guiding magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ling, Junpu, E-mail: lingjunpu@163.com; Zhang, Jiande; He, Juntao

2014-02-15

A novel coaxial transit radiation oscillator without external guiding magnetic field is designed to generate high power microwave at Ku-band. By using a coaxial structure, the space-charge potential energy is suppressed significantly, that is good for enhancing efficient beam-wave interaction. In order to improve the transmission stability of the unmagnetized intense relativistic electron beam, a Pierce-like cathode is employed in the novel device. By contrast with conventional relativistic microwave generators, this kind of device has the advantages of high stability, non-guiding magnetic field, and high efficiency. Moreover, with the coaxial design, it is possible to improve the power-handing capacity bymore » increasing the radial dimension of the Ku-band device. With a 550 keV and 7.5 kA electron beam, a 1.25 GW microwave pulse at 12.08 GHz has been obtained in the simulation. The power conversion efficiency is about 30%.« less

Advanced X-Ray Sources Ensure Safe Environments

NASA Technical Reports Server (NTRS)

2008-01-01

Ames Research Center awarded inXitu Inc. (formerly Microwave Power Technology), of Mountain View, California, an SBIR contract to develop a new design of electron optics for forming and focusing electron beams that is applicable to a broad class of vacuum electron devices. This technology offers an inherently rugged and more efficient X-ray source for material analysis; a compact and rugged X-ray source for smaller rovers on future Mars missions; and electron beam sources to reduce undesirable emissions from small, widely distributed pollution sources; and remediation of polluted sites.

Transmission Electron Microscope Measures Lattice Parameters

NASA Technical Reports Server (NTRS)

Pike, William T.

1996-01-01

Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.

Negatively Charged Hydrogen Production in a Multicusp Microwave Plasma

NASA Astrophysics Data System (ADS)

Trow, John Robert

1985-06-01

High energy neutral beams are necessary for the continued development of magnetically confined fusion plasma devices. Neutral beams based on positive ions are not efficient at beam energies of 100 keV or above, however negative ion based neutral beam systems are efficient, even at high beam energies. Volume production of H('-) has many advantages over the other methods, chiefly: simplicity of design and operation, and no need for alkalai metals. Since volume production requires a low electron temperature ((TURN)1 eV) but also requires molecular intermediates only formed by more energetic electrons (>20 eV), double plasma devices with a separate hot electron region are desirable. Therefore an experiment was undertaken to examine H('-) production by volume processes in a multicusp microwave discharge, part of the cusp field being enhanced to produce an ECR (electron cyclotron resonance), that would also isolate the hotter plasma formed there. This arrangement is analogous to the "magnetic filters" used in some other negative ion sources. This work describes the experiment set up and the results obtained, which are a survey of the behavior of this type of device. Also included is a discussion of the volume processes associated with H('-) production including numerical estimates, based on the experimental measurements, which indicate H('-) production is by dissociative attachment of cold electrons to vibrationally excited hydrogen molecules, and loss is by mutual neutralization with positive ions. The experimental observations are consistent with this model. These are also the same mechanisms used in the models of Bacal and Hiskes. Since magnetic fields generated by samarium cobalt permanent magnets were an important part of this experiment a set of field calculations was undertaken and is included here as a separate chapter. This device is shown to be a viable scheme of H('-) (or D('-)) produc- tion and is worthy of further development. There are several more. quantities which still need to be measured listed in the conclusion, along with suggested improvements. *This work was supported by the Director, Office of Energy Research, Office of Fusion Energy, Development & Technology Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.

Electron beam extraction on plasma cathode electron sources system

NASA Astrophysics Data System (ADS)

Purwadi, Agus; Taufik, M., Lely Susita R.; Suprapto, Saefurrochman, H., Anjar A.; Wibowo, Kurnia; Aziz, Ihwanul; Siswanto, Bambang

2017-03-01

ELECTRON BEAM EXTRACTION ON PLASMA CATHODE ELECTRON SOURCES SYSTEM. The electron beam extraction through window of Plasma Generator Chamber (PGC) for Pulsed Electron Irradiator (PEI) device and simulation of plasma potential has been studied. Plasma electron beam is extracted to acceleration region for enlarging their power by the external accelerating high voltage (Vext) and then it is passed foil window of the PEI for being irradiated to any target (atmospheric pressure). Electron beam extraction from plasma surface must be able to overcome potential barrier at the extraction window region which is shown by estimate simulation (Opera program) based on data of plasma surface potential of 150 V with Ueks values are varied by 150 kV, 175 kV and 200 kV respectively. PGC is made of 304 stainless steel with cylindrical shape in 30 cm of diameter, 90 cm length, electrons extraction window as many as 975 holes on the area of (15 × 65) cm2 with extraction hole cell in 0.3 mm of radius each other, an cylindrical shape IEP chamber is made of 304 stainless steel in 70 cm diameter and 30 cm length. The research result shown that the acquisition of electron beam extraction current depends on plasma parameters (electron density ne, temperature Te), accelerating high voltage Vext, the value of discharge parameter G, anode area Sa, electron extraction window area Se and extraction efficiency value α.

The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

2010-01-01

Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells

NASA Astrophysics Data System (ADS)

Ganbold, T.; Antonelli, M.; Cautero, G.; Menk, R. H.; Cucini, R.; Biasiol, G.

2015-09-01

Beam monitoring in synchrotron radiation or free electron laser facilities is extremely important for calibration and diagnostic issues. Here we propose an in-situ detector showing fast response and homogeneity for both diagnostics and calibration purposes. The devices are based on In0.75Ga0.25As/In0.75Al0.25As QWs, which offer several advantages due to their direct, low-energy band gap and high electron mobility at room temperature. A pixelation structure with 4 quadrants was developed on the back surface of the device, in order to fit commercially available readout chips. The QW devices have been tested with collimated monochromatic X-ray beams from synchrotron radiation. A rise in the current noise with positive bias was observed, which could be due to deep traps for hole carriers. Therefore, an optimized negative bias was chosen to minimize dark currents and noise. A decrease in charge collection efficiency was experienced as the beam penetrates into deeper layers, where a dislocation network is present. The prototype samples showed that individual currents obtained from each quadrant allow the position of the beam to be monitored for all the utilized energies. These detectors have a potential to estimate the position of the beam with a precision of about 10 μm.

TU-F-CAMPUS-T-04: An Evaluation of Out-Of-Field Doses for Electron Beams From Modern Varian and Elekta Linear Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cardenas, C; Nitsch, P; Kudchadker, R

2015-06-15

Purpose: Accurately determining out-of-field doses when using electron beam radiotherapy is of importance when treating pregnant patients or patients with implanted electronic devices. Scattered doses outside of the applicator field in electron beams have not been broadly investigated, especially since manufacturers have taken different approaches in applicator designs. Methods: In this study, doses outside of the applicator field were measured for electron beams produced by a 10×10 applicator on two Varian 21iXs operating at 6, 9, 12, 16, and 20 MeV, a Varian TrueBeam operating at 6, 9, 12, 16, and 20 MeV, and an Elekta Versa HD operating atmore » 6, 9, 12 and 15 MeV. Peripheral dose profiles and percent depth doses were measured in a Wellhofer water phantom at 100 cm SSD with a Farmer ion chamber. Doses were compared to peripheral photon doses from AAPM’s Task Group #36 report. Results: Doses were highest for the highest electron energies. Doses typically decreased with increasing distance from the field edge but showed substantial increases over some distance ranges. Substantial dose differences were observed between different accelerators; the Elekta accelerator had much higher doses than any Varian unit examined. Surprisingly, doses were often similar to, and could be much higher than, doses from photon therapy. Doses decreased sharply with depth before becoming nearly constant; the dose was found to decrease to a depth of approximately E(MeV)/4 in cm. Conclusion: The results of this study indicate that proper shielding may be very important when utilizing electron beams, particularly on a Versa HD, while treating pregnant patients or those with implanted electronic devices. Applying a water equivalent bolus of Emax(MeV)/4 thickness (cm) on the patient would reduce fetal dose drastically for all clinical energies and is a practical solution to manage the potentially high peripheral doses seen from modern electron beams. Funding from NIH Grant number: #CA180803.« less

Plasma devices to guide and collimate a high density of MeV electrons.

PubMed

Kodama, R; Sentoku, Y; Chen, Z L; Kumar, G R; Hatchett, S P; Toyama, Y; Cowan, T E; Freeman, R R; Fuchs, J; Izawa, Y; Key, M H; Kitagawa, Y; Kondo, K; Matsuoka, T; Nakamura, H; Nakatsutsumi, M; Norreys, P A; Norimatsu, T; Snavely, R A; Stephens, R B; Tampo, M; Tanaka, K A; Yabuuchi, T

2004-12-23

The development of ultra-intense lasers has facilitated new studies in laboratory astrophysics and high-density nuclear science, including laser fusion. Such research relies on the efficient generation of enormous numbers of high-energy charged particles. For example, laser-matter interactions at petawatt (10(15) W) power levels can create pulses of MeV electrons with current densities as large as 10(12) A cm(-2). However, the divergence of these particle beams usually reduces the current density to a few times 10(6) A cm(-2) at distances of the order of centimetres from the source. The invention of devices that can direct such intense, pulsed energetic beams will revolutionize their applications. Here we report high-conductivity devices consisting of transient plasmas that increase the energy density of MeV electrons generated in laser-matter interactions by more than one order of magnitude. A plasma fibre created on a hollow-cone target guides and collimates electrons in a manner akin to the control of light by an optical fibre and collimator. Such plasma devices hold promise for applications using high energy-density particles and should trigger growth in charged particle optics.

Dosimetric verification of gated delivery of electron beams using a 2D ion chamber array

PubMed Central

Yoganathan, S. A.; Das, K. J. Maria; Raj, D. Gowtham; Kumar, Shaleen

2015-01-01

The purpose of this study was to compare the dosimetric characteristics; such as beam output, symmetry and flatness between gated and non-gated electron beams. Dosimetric verification of gated delivery was carried for all electron beams available on Varian CL 2100CD medical linear accelerator. Measurements were conducted for three dose rates (100 MU/min, 300 MU/min and 600 MU/min) and two respiratory motions (breathing period of 4s and 8s). Real-time position management (RPM) system was used for the gated deliveries. Flatness and symmetry values were measured using Imatrixx 2D ion chamber array device and the beam output was measured using plane parallel ion chamber. These detector systems were placed over QUASAR motion platform which was programmed to simulate the respiratory motion of target. The dosimetric characteristics of gated deliveries were compared with non-gated deliveries. The flatness and symmetry of all the evaluated electron energies did not differ by more than 0.7 % with respect to corresponding non-gated deliveries. The beam output variation of gated electron beam was less than 0.6 % for all electron energies except for 16 MeV (1.4 %). Based on the results of this study, it can be concluded that Varian CL2100 CD is well suitable for gated delivery of non-dynamic electron beams. PMID:26170552

Plasma Shield for In-Air and Under-Water Beam Processes

NASA Astrophysics Data System (ADS)

Hershcovitch, Ady

2007-11-01

As the name suggests, the Plasma Shield is designed to chemically and thermally shield a target object by engulfing an area subjected to beam treatment with inert plasma. The shield consists of a vortex-stabilized arc that is employed to shield beams and workpiece area of interaction from atmospheric or liquid environment. A vortex-stabilized arc is established between a beam generating device (laser, ion or electron gun) and the target object. The arc, which is composed of a pure noble gas (chemically inert), engulfs the interaction region and shields it from any surrounding liquids like water or reactive gases. The vortex is composed of a sacrificial gas or liquid that swirls around and stabilizes the arc. In current art, many industrial processes like ion material modification by ion implantation, dry etching, and micro-fabrication, as well as, electron beam processing, like electron beam machining and electron beam melting is performed exclusively in vacuum, since electron guns, ion guns, their extractors and accelerators must be kept at a reasonably high vacuum, and since chemical interactions with atmospheric gases adversely affect numerous processes. Various processes involving electron ion and laser beams can, with the Plasma Shield be performed in practically any environment. For example, electron beam and laser welding can be performed under water, as well as, in situ repair of ship and nuclear reactor components. The plasma shield results in both thermal (since the plasma is hotter than the environment) and chemical shielding. The latter feature brings about in-vacuum process purity out of vacuum, and the thermal shielding aspect results in higher production rates. Recently plasma shielded electron beam welding experiments were performed resulting in the expected high quality in-air electron beam welding. Principle of operation and experimental results are to be discussed.

Thin film-coated polymer webs

DOEpatents

Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

1992-02-04

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

NASA Astrophysics Data System (ADS)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

Nonlinear analysis of a relativistic beam-plasma cyclotron instability

NASA Technical Reports Server (NTRS)

Sprangle, P.; Vlahos, L.

1986-01-01

A self-consistent set of nonlinear and relativistic wave-particle equations are derived for a magnetized beam-plasma system interacting with electromagnetic cyclotron waves. In particular, the high-frequency cyclotron mode interacting with a streaming and gyrating electron beam within a background plasma is considered in some detail. This interaction mode may possibly find application as a high-power source of coherent short-wavelength radiation for laboratory devices. The background plasma, although passive, plays a central role in this mechanism by modifying the dielectric properties in which the magnetized electron beam propagates. For a particular choice of the transverse beam velocity (i.e., the speed of light divided by the relativistic mass factor), the interaction frequency equals the nonrelativistic electron cyclotron frequency times the relativistic mass factor. For this choice of transverse beam velocity the detrimental effects of a longitudinal beam velocity spread is virtually removed. Power conversion efficiencies in excess of 18 percent are both analytically calculated and obtained through numerical simulations of the wave-particle equations. The quality of the electron beam, degree of energy and pitch angle spread, and its effect on the beam-plasma cyclotron instability is studied.

Demonstration of the hollow channel plasma wakefield accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gessner, Spencer J.

2016-09-17

A plasma wakefield accelerator is a device that converts the energy of a relativistic particle beam into a large-amplitude wave in a plasma. The plasma wave, or wakefield, supports an enormous electricfield that is used to accelerate a trailing particle beam. The plasma wakefield accelerator can therefore be used as a transformer, transferring energy from a high-charge, low-energy particle beam into a high-energy, low-charge particle beam. This technique may lead to a new generation of ultra-compact, high-energy particle accelerators. The past decade has seen enormous progress in the field of plasma wakefield acceleration with experimental demonstrations of the acceleration ofmore » electron beams by several gigaelectron-volts. The acceleration of positron beams in plasma is more challenging, but also necessary for the creation of a high-energy electron-positron collider. Part of the challenge is that the plasma responds asymmetrically to electrons and positrons, leading to increased disruption of the positron beam. One solution to this problem, first proposed over twenty years ago, is to use a hollow channel plasma which symmetrizes the response of the plasma to beams of positive and negative charge, making it possible to accelerate positrons in plasma without disruption. In this thesis, we describe the theory relevant to our experiment and derive new results when needed. We discuss the development and implementation of special optical devices used to create long plasma channels. We demonstrate for the first time the generation of meter-scale plasma channels and the acceleration of positron beams therein.« less

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE PAGES

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.; ...

2016-06-06

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Treatment of surfaces with low-energy electrons

NASA Astrophysics Data System (ADS)

Frank, L.; Mikmeková, E.; Lejeune, M.

2017-06-01

Electron-beam-induced deposition of various materials from suitable precursors has represented an established branch of nanotechnology for more than a decade. A specific alternative is carbon deposition on the basis of hydrocarbons as precursors that has been applied to grow various nanostructures including masks for subsequent technological steps. Our area of study was unintentional electron-beam-induced carbon deposition from spontaneously adsorbed hydrocarbon molecules. This process traditionally constitutes a challenge for scanning electron microscopy practice preventing one from performing any true surface studies outside an ultrahigh vacuum and without in-situ cleaning of samples, and also jeopardising other electron-optical devices such as electron beam lithographs. Here we show that when reducing the energy of irradiating electrons sufficiently, the e-beam-induced deposition can be converted to e-beam-induced release causing desorption of hydrocarbons and ultimate cleaning of surfaces in both an ultrahigh and a standard high vacuum. Using series of experiments with graphene samples, we demonstrate fundamental features of e-beam-induced desorption and present results of checks for possible radiation damage using Raman spectroscopy that led to optimisation of the electron energy for damage-free cleaning. The method of preventing carbon contamination described here paves the way for greatly enhanced surface sensitivity of imaging and substantially reduced demands on vacuum systems for nanotechnological applications.

Studies of high-current relativistic electron beam interaction with gas and plasma in Novosibirsk

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinitsky, S. L., E-mail: s.l.sinitsky@inp.nsk.su; Arzhannikov, A. V.; Novosibirsk State University, 2 Pirogova St., Novosibirsk, 630090

2016-03-25

This paper presents an overview of the studies on the interaction of a high-power relativistic electron beam (REB) with dense plasma confined in a long open magnetic trap. The main goal of this research is to achieve plasma parameters close to those required for thermonuclear fusion burning. The experimental studies were carried over the course of four decades on various devices: INAR, GOL, INAR-2, GOL-M, and GOL-3 (Budker Institute of Nuclear Physics) for a wide range of beam and plasma parameters.

Charge breeding of radioactive isotopes at the CARIBU facility with an electron beam ion source

NASA Astrophysics Data System (ADS)

Vondrasek, R. C.; Dickerson, C. A.; Hendricks, M.; Ostroumov, P.; Pardo, R.; Savard, G.; Scott, R.; Zinkann, G.

2018-05-01

An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed at Argonne National Laboratory as part of the californium rare ion breeder upgrade. For the past year, the EBIS-CB has been undergoing commissioning as part of the ATLAS accelerator complex. It has delivered both stable and radioactive beams with A/Q < 6, breeding times <30 ms, low background contamination, and charge breeding efficiencies >18% into a single charge state. The operation of this device, challenges during the commissioning phase, and future improvements will be discussed.

Thermoelectronic laser energy conversion for power transmission in space

NASA Technical Reports Server (NTRS)

Britt, E. J.; Yuen, C.

1977-01-01

Long distance transmission of power in space by means of laser beams is an attractive concept because of the very narrow beam divergence. Such a system requires efficient means to both generate the laser beam and to convert the light energy in the beam into useful electric output at the receiver. A plasma-type device known as a Thermo-Electronic Laser Energy Converter (TELEC) has been studied as a method of converting a 10.6 micron CO2 laser beam into electric power. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes with different areas. Since more electrons are collected by the larger electrode there is a net transport of current, and an EMF is generated in the external circuit. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the large electrode. A design for a TELEC system with an input 1 MW laser beam was developed as part of the study. The calculated performance of the system showed an overall efficiency of about 42%.

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope.

PubMed

Bäcke, Olof; Lindqvist, Camilla; de Zerio Mendaza, Amaia Diaz; Gustafsson, Stefan; Wang, Ergang; Andersson, Mats R; Müller, Christian; Kristiansen, Per Magnus; Olsson, Eva

2017-05-01

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV-vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000kGy. Copyright © 2016 Elsevier B.V. All rights reserved.

Enhanced thermal stability of a polymer solar cell blend induced by electron beam irradiation in the transmission electron microscope.

PubMed

Bäcke, Olof; Lindqvist, Camilla; de Zerio Mendaza, Amaia Diaz; Gustafsson, Stefan; Wang, Ergang; Andersson, Mats R; Müller, Christian; Kristiansen, Per Magnus; Olsson, Eva

2017-02-01

We show by in situ microscopy that the effects of electron beam irradiation during transmission electron microscopy can be used to lock microstructural features and enhance the structural thermal stability of a nanostructured polymer:fullerene blend. Polymer:fullerene bulk-heterojunction thin films show great promise for use as active layers in organic solar cells but their low thermal stability is a hindrance. Lack of thermal stability complicates manufacturing and influences the lifetime of devices. To investigate how electron irradiation affects the thermal stability of polymer:fullerene films, a model bulk-heterojunction film based on a thiophene-quinoxaline copolymer and a fullerene derivative was heat-treated in-situ in a transmission electron microscope. In areas of the film that exposed to the electron beam the nanostructure of the film remained stable, while the nanostructure in areas not exposed to the electron beam underwent large phase separation and nucleation of fullerene crystals. UV-vis spectroscopy shows that the polymer:fullerene films are stable for electron doses up to 2000kGy. Copyright © 2017 Elsevier B.V. All rights reserved.

Cathodochromic storage device

NASA Technical Reports Server (NTRS)

Bosomworth, D. R.; Moles, W. H.

1969-01-01

A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

Hole-cyclotron instability in semiconductor quantum plasmas

NASA Astrophysics Data System (ADS)

Areeb, F.; Rasheed, A.; Jamil, M.; Siddique, M.; Sumera, P.

2018-01-01

The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model. The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of. The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥z ̂ , speed of the externally injected electron beam v0∥k , thermal temperature of the electron beam τ, external magnetic field B0∥z ̂ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density. The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.

Radiobiological effectiveness of laser accelerated electrons in comparison to electron beams from a conventional linear accelerator.

PubMed

Laschinsky, Lydia; Baumann, Michael; Beyreuther, Elke; Enghardt, Wolfgang; Kaluza, Malte; Karsch, Leonhard; Lessmann, Elisabeth; Naumburger, Doreen; Nicolai, Maria; Richter, Christian; Sauerbrey, Roland; Schlenvoigt, Hans-Peter; Pawelke, Jörg

2012-01-01

The notable progress in laser particle acceleration technology promises potential medical application in cancer therapy through compact and cost effective laser devices that are suitable for already existing clinics. Previously, consequences on the radiobiological response by laser driven particle beams characterised by an ultra high peak dose rate have to be investigated. Therefore, tumour and non-malignant cells were irradiated with pulsed laser accelerated electrons at the JETI facility for the comparison with continuous electrons of a conventional therapy LINAC. Dose response curves were measured for the biological endpoints clonogenic survival and residual DNA double strand breaks. The overall results show no significant differences in radiobiological response for in vitro cell experiments between laser accelerated pulsed and clinical used electron beams. These first systematic in vitro cell response studies with precise dosimetry to laser driven electron beams represent a first step toward the long term aim of the application of laser accelerated particles in radiotherapy.

Design and application of multimegawatt X -band deflectors for femtosecond electron beam diagnostics

DOE PAGES

Dolgashev, Valery A.; Bowden, Gordon; Ding, Yuantao; ...

2014-10-02

Performance of the x-ray free electron laser Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests (FACET) is determined by the properties of their extremely short electron bunches. Multi-GeV electron bunches in both LCLS and FACET are less than 100 fs long. Optimization of beam properties and understanding of free-electron laser operation require electron beam diagnostics with time resolution of about 10 fs. We designed, built and commissioned a set of high frequency X-band deflectors which can measure the beam longitudinal space charge distribution and slice energy spread to better than 10 fs resolution at fullmore » LCLS energy (14 GeV), and with 70 fs resolution at full FACET energy (20 GeV). Use of high frequency and high gradient in these devices allows them to reach unprecedented performance. We report on the physics motivation, design considerations, operational configuration, cold tests, and typical results of the X-band deflector systems currently in use at SLAC.« less

Experimental characterization of active plasma lensing for electron beams

NASA Astrophysics Data System (ADS)

Pompili, R.; Anania, M. P.; Bellaveglia, M.; Biagioni, A.; Bini, S.; Bisesto, F.; Brentegani, E.; Castorina, G.; Chiadroni, E.; Cianchi, A.; Croia, M.; Di Giovenale, D.; Ferrario, M.; Filippi, F.; Giribono, A.; Lollo, V.; Marocchino, A.; Marongiu, M.; Mostacci, A.; Di Pirro, G.; Romeo, S.; Rossi, A. R.; Scifo, J.; Shpakov, V.; Vaccarezza, C.; Villa, F.; Zigler, A.

2017-03-01

The active plasma lens represents a compact and affordable tool with radially symmetric focusing and field gradients up to several kT/m. In order to be used as a focusing device, its effects on the particle beam distribution must be well characterized. Here, we present the experimental results obtained by focusing an high-brightness electron beam by means of a 3 cm-long discharge-capillary pre-filled with Hydrogen gas. We achieved minimum spot sizes of 24 μ m (rms) showing that, during plasma lensing, the beam emittance increases due to nonlinearities in the focusing field. The results have been cross-checked with numerical simulations, showing an excellent agreement.

Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

DTIC Science & Technology

2017-12-01

Chung, Stephen Kelley, Kimberley Olver, Blair C. Connelly, Anand V. Sampath, and Meredith L. Reed Sensors and Electron Devices Directorate, ARL...nitride [GaN], indium nitride, and corresponding ternary alloys) provide a basis for a variety of electronic and photonic devices across several...and driven by an electron beam irradiation, which leads to high carrier densities. This necessitates the transfer/removal of the GaN substrate (or GaN

Motion-free hybrid design laser beam propagation analyzer using a digital micromirror device and a variable focus liquid lens.

PubMed

Sheikh, Mumtaz; Riza, Nabeel A

2010-06-01

To the best of our knowledge, we propose the first motion-free laser beam propagation analyzer with a hybrid design using a digital micromirror device (DMD) and a liquid electronically controlled variable focus lens (ECVFL). Unlike prior analyzers that require profiling the beam at multiple locations along the light propagation axis, the proposed analyzer profiles the beam at the same plane for multiple values of the ECVFL focal length, thus eliminating beam profiler assembly motion. In addition to measuring standard Gaussian beam parameters, the analyzer can also be used to measure the M(2) beam propagation parameter of a multimode beam. Proof-of-concept beam parameter measurements with the proposed analyzer are successfully conducted for a 633 nm laser beam. Given the all-digital nature of the DMD-based profiling and all-analog motion-free nature of the ECVFL beam focus control, the proposed analyzer versus prior art promises better repeatability, speed, and reliability.

Charge breeding simulations for radioactive ion beam production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Variale, V.; Raino, A. C.; Clauser, T.

2012-02-15

The charge breeding technique is used for radioactive ion beam (RIB) production in order of optimizing the re-acceleration of the radioactive element ions produced by a primary beam in a thick target. Charge breeding is achieved by means of a device capable of increasing the ion charge state from 1+ to a desired value n+. In order to get high intensity RIB, experiments with charge breeding of very high efficiency could be required. To reach this goal, the charge breeding simulation could help to optimize the high charge state production efficiency by finding more proper parameters for the radioactive 1+more » ions. In this paper a device based on an electron beam ion source (EBIS) is considered. In order to study that problem, a code already developed for studying the ion selective containment in an EBIS with RF quadrupoles, BRICTEST, has been modified to simulate the ion charge state breeding rate for different 1+ ion injection conditions. Particularly, the charge breeding simulations for an EBIS with a hollow electron beam have been studied.« less

Integration of the GET electronics for the CHIMERA and FARCOS devices

NASA Astrophysics Data System (ADS)

De Filippo, E.; Acosta, L.; Auditore, L.; Boiano, C.; Cardella, G.; Castoldi, A.; D’Andrea, M.; De Luca, S.; Favela, F.; Fichera, F.; Giudice, N.; Gnoffo, B.; Grimaldi, A.; Guazzoni, C.; Lanzalone, G.; Librizzi, F.; Litrico, P.; Maiolino, C.; Maffesanti, S.; Martorana, NS; Pagano, A.; Pagano, EV; Papa, M.; Parsani, T.; Passaro, G.; Pirrone, S.; Politi, G.; Previdi, F.; Quattrocchi, L.; Rizzo, F.; Russotto, P.; Saccà, G.; Salemi, G.; Sciliberto, D.; Trifirò, A.; Trimarchi, M.

2018-05-01

A new front-end based on digital GET electronics has been adopted for the readout of the CsI(Tl) detectors of the CHIMERA 4π multi-detector and for the new modular Femtoscopy Array for Correlation and Spectroscopy (FARCOS). It is expected that the coupling of CHIMERA with the FARCOS array, featuring high angular and energy resolution, and the adoption of the new digital electronics will be well suited for improving specific future data analysis, with the full shape storage of the signals, in the field of heavy ion reactions with stable and exotic beams around the Fermi energies domain. Integration of the GET electronics with CHIMERA and FARCOS devices and with the local analog data acquisition will be briefly discussed. We present some results from previous experimental tests and from the first in-beam experiment (Hoyle-Gamma) with the coupled GET+CHIMERA data acquisition.

Analysis of Multilayer Devices for Superconducting Electronics by High-Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy

DOE PAGES

Missert, Nancy; Kotula, Paul G.; Rye, Michael; ...

2017-02-15

We used a focused ion beam to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). An automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

Collective Thomson scattering of a high power electron cyclotron resonance heating beam in LHD (invited).

PubMed

Kubo, S; Nishiura, M; Tanaka, K; Shimozuma, T; Yoshimura, Y; Igami, H; Takahash, H; Mutoh, T; Tamura, N; Tatematsu, Y; Saito, T; Notake, T; Korsholm, S B; Meo, F; Nielsen, S K; Salewski, M; Stejner, M

2010-10-01

Collective Thomson scattering (CTS) system has been constructed at LHD making use of the high power electron cyclotron resonance heating (ECRH) system in Large Helical Device (LHD). The necessary features for CTS, high power probing beams and receiving beams, both with well defined Gaussian profile and with the fine controllability, are endowed in the ECRH system. The 32 channel radiometer with sharp notch filter at the front end is attached to the ECRH system transmission line as a CTS receiver. The validation of the CTS signal is performed by scanning the scattering volume. A new method to separate the CTS signal from background electron cyclotron emission is developed and applied to derive the bulk and high energy ion components for several combinations of neutral beam heated plasmas.

A megawatt-level surface wave oscillator in Y-band with large oversized structure driven by annular relativistic electron beam.

PubMed

Wang, Jianguo; Wang, Guangqiang; Wang, Dongyang; Li, Shuang; Zeng, Peng

2018-05-03

High power vacuum electronic devices of millimeter wave to terahertz regime are attracting extensive interests due to their potential applications in science and technologies. In this paper, the design and experimental results of a powerful compact oversized surface wave oscillator (SWO) in Y-band are presented. The cylindrical slow wave structure (SWS) with rectangular corrugations and large diameter about 6.8 times the radiation wavelength is proposed to support the surface wave interacting with annular relativistic electron beam. By choosing appropriate beam parameters, the beam-wave interaction takes place near the π-point of TM 01 mode dispersion curve, giving high coupling impedance and temporal growth rate compared with higher TM 0n modes. The fundamental mode operation of the device is verified by the particle-in-cell (PIC) simulation results, which also indicate its capability of tens of megawatts power output in the Y-band. Finally, a compact experimental setup is completed to validate our design. Measurement results show that a terahertz pulse with frequency in the range of 0.319-0.349 THz, duration of about 2 ns and radiation power of about 2.1 MW has been generated.

Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors

NASA Astrophysics Data System (ADS)

Choi, Barbara Yuri; Cho, Kyungjune; Pak, Jinsu; Kim, Tae-Young; Kim, Jae-Keun; Shin, Jiwon; Seo, Junseok; Chung, Seungjun; Lee, Takhee

2018-05-01

We investigated the effects of the structural defects intentionally created by electron-beam irradiation with an energy of 30 keV on the electrical properties of monolayer MoS2 field effect transistors (FETs). We observed that the created defects by electron beam irradiation on the MoS2 surface working as trap sites deteriorated the carrier mobility and carrier concentration with increasing the subthreshold swing value and shifting the threshold voltage in MoS2 FETs. The electrical properties of electron-beam irradiated MoS2 FETs were slightly improved by treating the devices with thiol-terminated molecules which presumably passivated the structural defects of MoS2. The results of this study may enhance the understanding of the electrical properties of MoS2 FETs in terms of creating and passivating defect sites.

Mapper: high throughput maskless lithography

NASA Astrophysics Data System (ADS)

Kuiper, V.; Kampherbeek, B. J.; Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Boers, J.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.

2009-01-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. A new platform has been designed and built which contains a 300 mm wafer stage, a wafer handler and an electron beam column with 110 parallel electron beams. This manuscript describes the first patterning results with this 300 mm platform.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

PubMed Central

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dubinov, Alexander E.; Petrik, Alexey G.; Kurkin, Semen A.

We report on the possibility of the beam-plasma instability development in the system with electron beam interacting with the single-component hot electron plasma without ions. As considered system, we analyse the interaction of the low-current relativistic electron beam (REB) with squeezed state in the high-current REB formed in the relativistic magnetically insulated two-section vircator drift space. The numerical analysis is provided by means of 3D electromagnetic simulation in CST Particle Studio. We have conducted an extensive study of characteristic regimes of REB dynamics determined by the beam-plasma instability development in the absence of ions. As a result, the dependencies ofmore » instability increment and wavelength on the REB current value have been obtained. The considered process brings the new mechanism of controlled microwave amplification and generation to the device with a virtual cathode. This mechanism is similar to the action of the beam-plasma amplifiers and oscillators.« less

Dose control in electron beam processing: Comparison of results from a graphite charge collector, routine dosimeters and the ISS alanine-based dosimeter

NASA Astrophysics Data System (ADS)

Fuochi, P. G.; Onori, S.; Casali, F.; Chirco, P.

1993-10-01

A 12 MeV linear accelerator is currently used for electron beam processing of power semiconductor devices for lifetime control and, on an experimental basis, for food irradiation, sludge treatment etc. In order to control the irradiation process a simple, quick and reliable method for a direct evaluation of dose and fluence in a broad electron beam has been developed. This paper presents the results obtained using a "charge collector" which measures the charge absorbed in a graphite target exposed in air. Calibration of the system with super-Fricke dosimeter and comparison of absorbed dose results obtained with plastic dosimeters and alanine pellets are discussed.

Successful Beam-Beam Tuneshift Compensation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bishofberger, Kip Aaron

2005-01-01

The performance of synchrotron colliders has been limited by the beam-beam limit, a maximum tuneshift that colliding bunches could sustain. Due to bunch-to-bunch tune variation and intra-bunch tune spread, larger tuneshifts produce severe emittance growth. Breaking through this constraint has been viewed as impossible for several decades. This dissertation introduces the physics of ultra-relativistic synchrotrons and low-energy electron beams, with emphasis placed on the limits of the Tevatron and the needs of a tuneshift-compensation device. A detailed analysis of the Tevatron Electron Lens (T EL) is given, comparing theoretical models to experimental data whenever possible. Finally, results of Tevatron operationsmore » with inclusion of the T EL are presented and analyzed. It is shown that the T EL provides a way to shatter the previously inescapable beam-beam limit.« less

Magnetic lens apparatus for use in high-resolution scanning electron microscopes and lithographic processes

DOEpatents

Crewe, Albert V.

2000-01-01

Disclosed are lens apparatus in which a beam of charged particlesis brought to a focus by means of a magnetic field, the lens being situated behind the target position. In illustrative embodiments, a lens apparatus is employed in a scanning electron microscopeas the sole lens for high-resolution focusing of an electron beam, and in particular, an electron beam having an accelerating voltage of from about 10 to about 30,000 V. In one embodiment, the lens apparatus comprises an electrically-conducting coil arranged around the axis of the beam and a magnetic pole piece extending along the axis of the beam at least within the space surrounded by the coil. In other embodiments, the lens apparatus comprises a magnetic dipole or virtual magnetic monopole fabricated from a variety of materials, including permanent magnets, superconducting coils, and magnetizable spheres and needles contained within an energy-conducting coil. Multiple-array lens apparatus are also disclosed for simultaneous and/or consecutive imaging of multiple images on single or multiple specimens. The invention further provides apparatus, methods, and devices useful in focusing charged particle beams for lithographic processes.

Development of Novel Treatment Plan Verification Techniques for Prostate Intensity Modulation Arc Therapy

DTIC Science & Technology

2010-03-01

is to develop a novel clinical useful delivered-dose verification protocol for modern prostate VMAT using Electronic Portal Imaging Device (EPID...technique. A number of important milestones have been accomplished, which include (i) calibrated CBCT HU vs. electron density curve; (ii...prostate  VMAT  using  Electronic   Portal  Imaging  Device  (EPID)  and  onboard Cone beam Computed Tomography (CBCT).  The specific aims of this project

The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

NASA Astrophysics Data System (ADS)

Van Lancker, Marc; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

1999-05-01

The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat à l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production.

Effect of radiation therapy on permanent pacemaker and implantable cardioverter-defibrillator function.

PubMed

Makkar, Akash; Prisciandaro, Joann; Agarwal, Sunil; Lusk, Morgan; Horwood, Laura; Moran, Jean; Fox, Colleen; Hayman, James A; Ghanbari, Hamid; Roberts, Brett; Belardi, Diego; Latchamsetty, Rakesh; Crawford, Thomas; Good, Eric; Jongnarangsin, Krit; Bogun, Frank; Chugh, Aman; Oral, Hakan; Morady, Fred; Pelosi, Frank

2012-12-01

Radiation therapy's (RT's) effects on cardiac implantable electronic devices (CIEDs) such as implantable cardioverter-defibrillators (ICDs) and pacemakers (PMs) are not well established, leading to device removal or relocation in preparation for RT. To determine the effect of scattered RT on CIED performance. We analyzed 69 patients--50 (72%) with PMs and 19 (28%) with ICDs--receiving RT at the University of Michigan. Collected data included device model, anatomic location, and treatment beam energies, treatment type, and estimated dose to the device. Patients were treated with either high-energy (16-MV) and/or low-energy (6 MV) photon beams with or without electron beams (6-16 MeV). The devices were interrogated with pre- and post-RT and/or weekly with either in-treatment or home interrogation, depending on the patient's dependence on the device and the estimated or measured delivered dose. Outcomes analyzed were inappropriate ICD therapies, device malfunctions, or device-related clinical events. The PMs were exposed to 84.4 ± 99.7 cGy of radiation, and the ICDs were exposed to 92.1 ± 72.6 cGy of radiation. Two patients with ICDs experienced a partial reset of the ICD with the loss of historic diagnostic data after receiving 123 and 4 cGy, respectively. No device malfunction or premature battery depletion was observed at 6-month follow-up from RT completion. CIED malfunction due to indirect RT exposure is uncommon. Regular in-treatment or home interrogation should be done to detect and treat these events and to ensure that diagnostic data are preserved. Copyright © 2012 Elsevier Inc. All rights reserved.

A Monte Carlo software for the 1-dimensional simulation of IBIC experiments

NASA Astrophysics Data System (ADS)

Forneris, J.; Jakšić, M.; Pastuović, Ž.; Vittone, E.

2014-08-01

The ion beam induced charge (IBIC) microscopy is a valuable tool for the analysis of the electronic properties of semiconductors. In this work, a recently developed Monte Carlo approach for the simulation of IBIC experiments is presented along with a self-standing software equipped with graphical user interface. The method is based on the probabilistic interpretation of the excess charge carrier continuity equations and it offers to the end-user the full control not only of the physical properties ruling the induced charge formation mechanism (i.e., mobility, lifetime, electrostatics, device's geometry), but also of the relevant experimental conditions (ionization profiles, beam dispersion, electronic noise) affecting the measurement of the IBIC pulses. Moreover, the software implements a novel model for the quantitative evaluation of the radiation damage effects on the charge collection efficiency degradation of ion-beam-irradiated devices. The reliability of the model implementation is then validated against a benchmark IBIC experiment.

Trains of electron micro-bunches in plasma wake-field acceleration

NASA Astrophysics Data System (ADS)

Lécz, Zsolt; Andreev, Alexander; Konoplev, Ivan; Seryi, Andrei; Smith, Jonathan

2018-07-01

Plasma-based charged particle accelerators have been intensively investigated in the past three decades due to their capability to open up new horizons in accelerator science and particle physics yielding electric field accelerating gradient more than three orders of magnitudes higher than in conventional devices. At the current stage the most advanced and reliable mechanism for accelerating electrons is based on the propagation of an intense laser pulse or a relativistic electron beam in a low density gaseous target. In this paper we concentrate on the electron beam-driven plasma wake-field acceleration and demonstrate using 3D PiC simulations that a train of electron micro-bunches with ∼10 fs period can be generated behind the driving beam propagating in a density down-ramp. We will discuss the conditions and properties of the micro-bunches generated aiming at understanding and study of multi-bunch mechanism of injection. It is show that the periodicity and duration of micro-bunches can be controlled by adjusting the plasma density gradient and driving beam charge.

Parametric study of transport beam lines for electron beams accelerated by laser-plasma interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scisciò, M.; Antici, P., E-mail: patrizio.antici@polytechnique.edu; INRS-EMT, Université du Québec, 1650 Lionel Boulet, Varennes, Québec J3X 1S2

2016-03-07

In the last decade, laser-plasma acceleration of high-energy electrons has attracted strong attention in different fields. Electrons with maximum energies in the GeV range can be laser-accelerated within a few cm using multi-hundreds terawatt (TW) lasers, yielding to very high beam currents at the source (electron bunches with up to tens-hundreds of pC in a few fs). While initially the challenge was to increase the maximum achievable electron energy, today strong effort is put in the control and usability of these laser-generated beams that still lack of some features in order to be used for applications where currently conventional, radio-frequencymore » (RF) based, electron beam lines represent the most common and efficient solution. Several improvements have been suggested for this purpose, some of them acting directly on the plasma source, some using beam shaping tools located downstream. Concerning the latter, several studies have suggested the use of conventional accelerator magnetic devices (such as quadrupoles and solenoids) as an easy implementable solution when the laser-plasma accelerated beam requires optimization. In this paper, we report on a parametric study related to the transport of electron beams accelerated by laser-plasma interaction, using conventional accelerator elements and tools. We focus on both, high energy electron beams in the GeV range, as produced on petawatt (PW) class laser systems, and on lower energy electron beams in the hundreds of MeV range, as nowadays routinely obtained on commercially available multi-hundred TW laser systems. For both scenarios, our study allows understanding what are the crucial parameters that enable laser-plasma accelerators to compete with conventional ones and allow for a beam transport. We show that suitable working points require a tradeoff-combination between low beam divergence and narrow energy spread.« less

Development of a pepper-pot device to determine the emittance of an ion beam generated by electron cyclotron resonance ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strohmeier, M.; University of Applied Sciences Karlsruhe, Moltkestr. 30, 76133 Karlsruhe; Benitez, J. Y.

2010-02-15

This paper describes the recent development and commissioning of a pepper-pot emittance meter at the Lawrence Berkeley National Laboratory (LBNL). It is based on a potassium bromide (KBr) scintillator screen in combination with a charged coupled device camera. Pepper-pot scanners record the full four-dimensional transverse phase space emittances which are particularly interesting for electron cyclotron resonance ion sources. The strengths and limitations of evaluating emittances using optical pepper-pot scanners are described and systematic errors induced by the optical data acquisition system will be presented. Light yield tests of KBr exposed to different ion species and first emittance measurement data usingmore » ion beams extracted from the 6.4 GHz LBNL electron cyclotron resonance ion source are presented and discussed.« less

Resonator Optical Designs For Free Electron Lasers

NASA Astrophysics Data System (ADS)

Viswanathan, V. K.; Saxman, A.; Woodfin, G.

1985-11-01

The output beam from free-electron lasers tends to be a thin, pencil-like beam because of the nature of the gain volume. For moderate power devices, mirror damage considerations imply that the beam has to travel many meters before it can expand enough to allow retro-reflection from state-of-the-art mirrors. However, use of grazing incidence optics can resolve the problem of damage to the optical elements and result in a cavity of reasonable dimensions. The optical design considerations for such resonators are addressed in this paper. A few of the practical resonator designs approaching diffraction limited performance are presented.

Resonator optical designs for free electron lasers

NASA Astrophysics Data System (ADS)

Viswanathan, V. K.; Saxman, A.; Woodfin, G.

1985-03-01

The output beam from free-electron lasers tends to be a thin, pencil-like beam because of the nature of the gain volume. For moderate power devices, mirror damage considerations imply that the beam has to travel many meters before it can expand enough to allow retro-reflection from state-of-the-art mirrors. However, use of grazing incidence optics can resolve the problem of damage to the optical elements and result in a cavity of reasonable dimensions. The optical design considerations for such resonators are discussed. A few of the practical resonator designs approaching diffraction limited performance are presented.

High-speed electronic beam steering using injection locking of a laser-diode array

NASA Astrophysics Data System (ADS)

Swanson, E. A.; Abbas, G. L.; Yang, S.; Chan, V. W. S.; Fujimoto, J. G.

1987-01-01

High-speed electronic steering of the output beam of a 10-stripe laser-diode array is reported. The array was injection locked to a single-frequency laser diode. High-speed steering of the locked 0.5-deg-wide far-field lobe is demonstrated either by modulating the injection current of the array or by modulating the frequency of the master laser. Closed-loop tracking bandwidths of 70 kHz and 3 MHz, respectively, were obtained. The beam-steering bandwidths are limited by the FM responses of the modulated devices for both techniques.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

Surface modification using low energy ground state ion beams

NASA Technical Reports Server (NTRS)

Chutjian, Ara (Inventor); Hecht, Michael H. (Inventor); Orient, Otto J. (Inventor)

1990-01-01

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam.

PubMed

Xu, Shengyong; Tian, Mingliang; Wang, Jinguo; Xu, Jian; Redwing, Joan M; Chan, Moses H W

2005-12-01

We demonstrate that a high-intensity electron beam can be applied to create holes, gaps, and other patterns of atomic and nanometer dimensions on a single nanowire, to weld individual nanowires to form metal-metal or metal-semiconductor junctions, and to remove the oxide shell from a crystalline nanowire. In single-crystalline Si nanowires, the beam induces instant local vaporization and local amorphization. In metallic Au, Ag, Cu, and Sn nanowires, the beam induces rapid local surface melting and enhanced surface diffusion, in addition to local vaporization. These studies open up a novel approach for patterning and connecting nanomaterials in devices and circuits at the nanometer scale.

Measurement of the response time of the delay window for the neutron converter of the SPIRAL2 project

NASA Astrophysics Data System (ADS)

Acosta, G.; Andre, T.; Bermudez, J.; Blinov, M. F.; Jamet, C.; Logatchev, P. V.; Semenov, Y. I.; Starostenko, A. A.; Tecchio, L. B.; Tsyganov, A. S.; Udup, E.; Vasquez, J.

2014-09-01

Research and development of a safety system for the SPIRAL2 facility has been conceived to protect the UCx target from a possible interaction with the 200 kW deuteron beam. The system called "delay window" (DW) is designed as an integral part of the neutron converter module and is located in between the neutron converter and the fission target. The device has been designed as a barrier, located directly behind the neutron converter on the axis of the deuteron beam, with the purpose of "delaying" the eventual interaction of the deuteron beam with the UCx target in case of a failure of the neutron converter. The "delay" must be long enough to allow the interlock to react and safely stop the beam operation, before the beam will reach the UCx target. The working concept of the DW is based on the principle of the electrical fuse. Electrically insulated wires placed on the surface of a Tantalum disk assure a so called "free contact", normally closed to an electronic circuit located on the HV platform, far from the radioactive environment. The melting temperature of the wires is much less than Tantalum. Once the beam is impinging on the disk, one or more wires are melted and the "free contact" is open. A solid state relay is changing its state and a signal is sent to the interlock device. A prototype of the DW has been constructed and tested with an electron beam of power density equivalent to the SPIRAL2 beam. The measured "delay" is 682.5 ms (σ=116 ms), that is rather long in comparison to the intrinsic delays introduced by the detectors itself (2 ms) and by the associated electronic devices (120 ns). The experimental results confirm that, in the case of a failure of the neutron converter, the DW as conceived is enable to withstand the beam power for a period of time sufficiently long to safely shut down the SPIRAL2 accelerator.

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

InAs-based Hterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Advanced High Power mm-Wave Microwave Devices Final Report CRADA No. TC-0287-92

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shang, C. C.; Tomlin, T.

The purpose of this CRADA was to improve existing high-average-power microwave devices and develop the next generation microwave devices for energy and defense applications. A Free Electron Maser was under test at the FOM Institute (Rijnhuizen) Netherlands with the goal of producing a lMW-long pulse to CW microwave output in the range 130GHz to 250GHz. The DC acceleration and beam transport system is eventually to be used in a depressed collector cotilguration requiring 99.8% beam transmission in order that the high voltage 2MV supply be required only to supply 20 milliamps of body current. A relativistic version of the Herrmannmore » optical theory originally developed for microwave tube beams was used to take into account thermal elections far out on the gaussian distribution tail that can translate into beam current well outside the ideal beam edge. This theory was applied to the FOM beamline design and predicts that the beam envelope containing 99.8% of the current can be successfully transported to the undulator for a wide range of assumed eminence values.« less

Studies on a Q/A selector for the SECRAL electron cyclotron resonance ion source.

PubMed

Yang, Y; Sun, L T; Feng, Y C; Fang, X; Lu, W; Zhang, W H; Cao, Y; Zhang, X Z; Zhao, H W

2014-08-01

Electron cyclotron resonance ion sources are widely used in heavy ion accelerators in the world because they are capable of producing high current beams of highly charged ions. However, the design of the Q/A selector system for these devices is challenging, because it must have a sufficient ion resolution while controlling the beam emittance growth. Moreover, this system has to be matched for a wide range of ion beam species with different intensities. In this paper, research on the Q/A selector system at the SECRAL (Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou) platform both in experiment and simulation is presented. Based on this study, a new Q/A selector system has been designed for SECRAL II. The features of the new design including beam simulations are also presented.

Optical transition radiation used in the diagnostic of low energy and low current electron beams in particle accelerators.

PubMed

Silva, T F; Bonini, A L; Lima, R R; Maidana, N L; Malafronte, A A; Pascholati, P R; Vanin, V R; Martins, M N

2012-09-01

Optical transition radiation (OTR) plays an important role in beam diagnostics for high energy particle accelerators. Its linear intensity with beam current is a great advantage as compared to fluorescent screens, which are subject to saturation. Moreover, the measurement of the angular distribution of the emitted radiation enables the determination of many beam parameters in a single observation point. However, few works deals with the application of OTR to monitor low energy beams. In this work we describe the design of an OTR based beam monitor used to measure the transverse beam charge distribution of the 1.9-MeV electron beam of the linac injector of the IFUSP microtron using a standard vision machine camera. The average beam current in pulsed operation mode is of the order of tens of nano-Amps. Low energy and low beam current make OTR observation difficult. To improve sensitivity, the beam incidence angle on the target was chosen to maximize the photon flux in the camera field-of-view. Measurements that assess OTR observation (linearity with beam current, polarization, and spectrum shape) are presented, as well as a typical 1.9-MeV electron beam charge distribution obtained from OTR. Some aspects of emittance measurement using this device are also discussed.

Plasma channel optical pumping device and method

DOEpatents

Judd, O.P.

1983-06-28

A device and method are disclosed for optically pumping a gaseous laser using blackbody radiation produced by a plasma channel which is formed from an electrical discharge between two electrodes spaced at opposite longitudinal ends of the laser. A preionization device which can comprise a laser or electron beam accelerator produces a preionization beam which is sufficient to cause an electrical discharge between the electrodes to initiate the plasma channel along the preionization path. The optical pumping energy is supplied by a high voltage power supply rather than by the preionization beam. High output optical intensities are produced by the laser due to the high temperature blackbody radiation produced by the plasma channel, in the same manner as an exploding wire type laser. However, unlike the exploding wire type laser, the disclosed invention can be operated in a repetitive manner by utilizing a repetitive pulsed preionization device. 5 figs.

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

NASA Astrophysics Data System (ADS)

Aguiar, V. A. P.; Added, N.; Medina, N. H.; Macchione, E. L. A.; Tabacniks, M. H.; Aguirre, F. R.; Silveira, M. A. G.; Santos, R. B. B.; Seixas, L. E.

2014-08-01

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation.

Printed Biopolymer-Based Electro-Optic Device Components

DTIC Science & Technology

2013-07-01

devices and fabricated e-beam lithography-based master molds. Printed micro and nanostructures using a newly developed spin-on nanoprinting (SNAP...polymeric materials. Among the natural biopolymers , deoxyribonucleic acid (DNA) is an attractive material which can be used to make electronic and...photonic devices [2, 3]. If patterned on the micro and nanoscale using a soft lithography technique, high quality biodegradable optical devices can be

Generating High-Brightness Ion Beams for Inertial Confinement Fusion

NASA Astrophysics Data System (ADS)

Cuneo, M. E.

1997-11-01

The generation of high current density ion beams with applied-B ion diodes showed promise in the late-1980's as an efficient, rep-rate, focusable driver for inertial confinement fusion. These devices use several Tesla insulating magnetic fields to restrict electron motion across anode-cathode gaps of order 1-2 cm, while accelerating ions to generate ≈ 1 kA/cm^2, 5 - 15 MeV beams. These beams have been used to heat hohlraums to about 65 eV. However, meeting the ICF driver requirements for low-divergence and high-brightness lithium ion beams has been more technically challenging than initially thought. Experimental and theoretical work over the last 5 years shows that high-brightness beams meeting the requirements for inertial confinement fusion are possible. The production of these beams requires the simultaneous integration of at least four conditions: 1) rigorous vacuum cleaning techniques for control of undesired anode, cathode, ion source and limiter plasma formation from electrode contaminants to control impurity ions and impedance collapse; 2) carefully tailored insulating magnetic field geometry for uniform beam generation; 3) high magnetic fields (V_crit/V > 2) and other techniques to control the electron sheath and the onset of a high divergence electromagnetic instability that couples strongly to the ion beam; and 4) an active, pre-formed, uniform lithium plasma for low source divergence which is compatible with the above electron-sheath control techniques. These four conditions have never been simultaneously present in any lithium beam experiment, but simulations and experimental tests of individual conditions have been done. The integration of these conditions is a goal of the present ion beam generation program at Sandia. This talk will focus on the vacuum cleaning techniques for ion diodes and pulsed power devices in general, including experimental results obtained on the SABRE and PBFA-II accelerators over the last 3 years. The current status of integration of the other key physics and technologies required to demonstrate high-brightness ion beams will also be presented.

Imaging crystal spectrometer for high-resolution x-ray measurements on electron beam ion traps and tokamaks

DOE PAGES

Beiersdorfer, P.; Magee, E. W.; Hell, N.; ...

2016-09-09

Here, we describe a crystal spectrometer implemented on the Livermore electron beam ion traps that employ two spherically bent quartz crystals and a cryogenically cooled back-illuminated charge-coupled device detector to measure x rays with a nominal resolving power of λ/Δλ ≥ 10 000. Its focusing properties allow us to record x rays either with the plane of dispersion perpendicular or parallel to the electron beam and, thus, to preferentially select one of the two linear x-ray polarization components. Moreover, by choice of dispersion plane and focussing conditions, we use the instrument either to image the distribution of the ions withinmore » the 2 cm long trap region, or to concentrate x rays of a given energy to a point on the detector, which optimizes the signal-to-noise ratio. We demonstrate the operation and utility of the new instrument by presenting spectra of Mo 34+, which prepares the instrument for use as a core impurity diagnostic on the NSTX-U spherical torus and other magnetic fusion devices that employ molybdenum as plasma facing components.« less

Simulation of beam-induced plasma in gas-filled rf cavities

DOE PAGES

Yu, Kwangmin; Samulyak, Roman; Yonehara, Katsuya; ...

2017-03-07

Processes occurring in a radio-frequency (rf) cavity, filled with high pressure gas and interacting with proton beams, have been studied via advanced numerical simulations. Simulations support the experimental program on the hydrogen gas-filled rf cavity in the Mucool Test Area (MTA) at Fermilab, and broader research on the design of muon cooling devices. space, a 3D electromagnetic particle-in-cell (EM-PIC) code with atomic physics support, was used in simulation studies. Plasma dynamics in the rf cavity, including the process of neutral gas ionization by proton beams, plasma loading of the rf cavity, and atomic processes in plasma such as electron-ion andmore » ion-ion recombination and electron attachment to dopant molecules, have been studied. Here, through comparison with experiments in the MTA, simulations quantified several uncertain values of plasma properties such as effective recombination rates and the attachment time of electrons to dopant molecules. Simulations have achieved very good agreement with experiments on plasma loading and related processes. Lastly, the experimentally validated code space is capable of predictive simulations of muon cooling devices.« less

Defining the safe current limit for opening ID photon shutter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seletskiy, S.

The NSLS-II storage ring is protected from possible damage from insertion devices (IDs) synchrotron radiation by a dedicated active interlock system (AIS). It monitors electron beam position and angle and triggers beam drop if beam orbit exceeds the boundaries of pre-calculated active interlock envelope (AIE). The beamlines (BL) and beamline frontends (FE) are designed under assumption that the electron beam is interlocked within the AIE. For historic reasons the AIS engages the ID active interlock (AI-ID) at any non-zero beam current whenever the ID photon shutter (IDPS) is getting opened. Such arrangement creates major inconveniences for BLs commissioning. Apparently theremore » is some IDPS safe current limit (SCL) under which the IDPS can be opened without interlocking the e-beam. The goal of this paper is to find such limit.« less

Considerations for NSLS-II Synchrotron Radiation Protection When Operating Damping Wigglers at Low Machine Energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seletskiy, S.; Podobedov, B.

2015-12-30

The NSLS-II storage ring vacuum chamber, including frontends (FE) and beamlines (BL), is protected from possible damage from synchrotron radiation (SR) emitted from insertion devices (IDs) by a dedicated active interlock system (AIS). The system monitors electron beam position and angle and triggers a beam dump if the beam orbit is outside of the active interlock envelope (AIE). The AIE was calculated under the assumptions of 3 GeV beam energy and ID gaps set to their minimum operating values (i.e. “fully closed”). Recently it was proposed to perform machine studies that would ramp the stored beam energy significantly below themore » nominal operational value of 3 GeV. These studies may potentially include the use of NSLS-II damping wigglers (DWs) for electron beam emittance reduction and control.« less

Ion Beam And Plasma Jet Generated By A 3 kJ Plasma Focus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, L. K.; Ngoi, S. K.; Yap, S. L.

The plasma focus device is well known as a copious source of X-ray, neutrons, ion and electron beams. In this work, the characteristics of energetic ion beam emission in a 3 kJ Mather-type plasma focus is studied. The plasma focus system is operated at low pressure with argon as the working gas. The objective of the project is to obtain the argon ion beam and the plasma jet. The ion beam and plasma jet are used for material processing. In order to investigate the effect of the ion beam and plasma jet, crystalline silicon substrates are placed above the anode.more » Samples obtained after irradiation with the plasma focus discharge are analyzed by using the Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX).« less

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Comparative study of radiation emission without and with target in a 2.2 kJ plasma focus device

NASA Astrophysics Data System (ADS)

Khan, Muhammad Zubair; Ling, Yap Seong; San, Wong Chiow

2014-03-01

The radiation emission in a 2.2 kJ Mather-type dense plasma focus device is investigated using a five channel BPX65 PIN diode spectrometer. Estimated X-ray associated with the hollow anode without and with target in Argon gas medium is compared. At optimum conditions, the radiation emission from the system is found to be strongly influenced with target in hollow anode and the filling gas pressure. The maximum X-ray yield in 4π sr was obtained in case of hollow anode in argon gas medium with target "Lead" due to interaction of electron beam. Results indicated that an appropriate design of hollow anode with target could enhance the radiation emission by more intense interaction of expected electron beam with target. The outcomes are helpful in designing a plasma focus with enhanced X-ray radiation with improved shot to shot reproducibility in plasma focus device.

Relativistic electron motion in cylindrical waveguide with strong guiding magnetic field and high power microwave

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ping; Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024; Sun, Jun

2015-06-15

In O-type high power microwave (HPM) devices, the annular relativistic electron beam is constrained by a strong guiding magnetic field and propagates through an interaction region to generate HPM. Some papers believe that the E × B drift of electrons may lead to beam breakup. This paper simplifies the interaction region with a smooth cylindrical waveguide to research the radial motion of electrons under conditions of strong guiding magnetic field and TM{sub 01} mode HPM. The single-particle trajectory shows that the radial electron motion presents the characteristic of radial guiding-center drift carrying cyclotron motion. The radial guiding-center drift is spatiallymore » periodic and is dominated by the polarization drift, not the E × B drift. Furthermore, the self fields of the beam space charge can provide a radial force which may pull electrons outward to some extent but will not affect the radial polarization drift. Despite the radial drift, the strong guiding magnetic field limits the drift amplitude to a small value and prevents beam breakup from happening due to this cause.« less

Electron microscope phase enhancement

DOEpatents

Jin, Jian; Glaeser, Robert M.

2010-06-15

A microfabricated electron phase shift element is used for modifying the phase characteristics of an electron beam passing though its center aperture, while not affecting the more divergent portion of an incident beam to selectively provide a ninety-degree phase shift to the unscattered beam in the back focal plan of the objective lens, in order to realize Zernike-type, in-focus phase contrast in an electron microscope. One application of the element is to increase the contrast of an electron microscope for viewing weakly scattering samples while in focus. Typical weakly scattering samples include biological samples such as macromolecules, or perhaps cells. Preliminary experimental images demonstrate that these devices do apply a ninety degree phase shift as expected. Electrostatic calculations have been used to determine that fringing fields in the region of the scattered electron beams will cause a negligible phase shift as long as the ratio of electrode length to the transverse feature-size aperture is about 5:1. Calculations are underway to determine the feasibility of aspect smaller aspect ratios of about 3:1 and about 2:1.

Electronics Devices and Materials

DTIC Science & Technology

2008-03-17

Molecular -bea epitaxy MCNPX ............... Software code Misse6 ................. Satellite expected to carry ORMatE-I Misse7...patterning using electron beam lithography), spaces (class 1000 clean benches), and skills (appropriate mix of skilled technicians and professionals...34 Process samples for various projects such as Antimode Base High Electron Mobility Transistors ( HEMT ) and Double Heterojuction Bipolar Transistors

Application of He ion microscopy for material analysis

NASA Astrophysics Data System (ADS)

Altmann, F.; Simon, M.; Klengel, R.

2009-05-01

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.

Operation of a gated field emitter using an individual carbon nanofiber cathode

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Ellis, E. D.; Britton, C. L.; Simpson, M. L.; Lowndes, D. H.; Baylor, L. R.

2001-11-01

We report on the operation of an integrated gated cathode device using a single vertically aligned carbon nanofiber as the field emission element. This device is capable of operation in a moderate vacuum for extended periods of time without experiencing a degradation of performance. Less than 1% of the total emitted current is collected by the gate electrode, indicating that the emitted electron beam is highly collimated. As a consequence, this device is ideal for applications that require well-focused electron emission from a microscale structure.

Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography.

PubMed

Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S D; Flewitt, Andrew J; Wilkinson, Timothy D

2016-12-02

High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm -2 , 1 nAs -1 ) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ∼33 nm with 80 nm spacing; for isolated structures, ∼45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ∼0.25 cm 2 .

Conceptual design of front ends for the advanced photon source multi-bend achromats upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaski, Y., E-mail: jaskiy@aps.anl.gov; Westferro, F., E-mail: westferr@aps.anl.gov; Lee, S. H., E-mail: shlee@aps.anl.gov

2016-07-27

The proposed Advanced Photon Source (APS) upgrade from a double-bend achromats (DBA) to multi-bend achromats (MBA) lattice with ring energy change from 7 GeV to 6 GeV and beam current from 100 mA to 200 mA poses new challenges for front ends. All front ends must be upgraded to fulfill the following requirements: 1) handle the high heat load from two insertion devices in either inline or canted configuration, 2) include a clearing magnet in the front end to deflect and dump any electrons in case the electrons escape from the storage ring during swap-out injection with the safety shuttersmore » open, 3) incorporate the next generation x-ray beam position monitors (XBPMs) into the front end to meet the new stringent beam stability requirements. This paper presents the evaluation of the existing APS front ends and standardizes the insertion device (ID) front ends into two types: one for the single beam and one for the canted beams. The conceptual design of high heat load front end (HHLFE) and canted undulator front end (CUFE) for APS MBA upgrade is presented.« less

Conceptual Design of Front Ends for the Advanced Photon Source Multi-bend Achromats Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaski, Y.; Westferro, F.; Lee, S. H.

2016-07-27

The proposed Advanced Photon Source (APS) upgrade from a double-bend achromats (DBA) to multi-bend achromats (MBA) lattice with ring energy change from 7 GeV to 6 GeV and beam current from 100 mA to 200 mA poses new challenges for front ends. All front ends must be upgraded to fulfill the following requirements: 1) handle the high heat load from two insertion devices in either inline or canted configuration, 2) include a clearing magnet in the front end to deflect and dump any electrons in case the electrons escape from the storage ring during swap-out injection with the safety shuttersmore » open, 3) incorporate the next generation x-ray beam position monitors (XBPMs) into the front end to meet the new stringent beam stability requirements. This paper presents the evaluation of the existing APS front ends and standardizes the insertion device (ID) front ends into two types: one for the single beam and one for the canted beams. The conceptual design of high heat load front end (HHLFE) and canted undulator front end (CUFE) for APS MBA upgrade is presented.« less

Fabrication of nanostructured transmissive optical devices on ITO-glass with UV1116 photoresist using high-energy electron beam lithography

NASA Astrophysics Data System (ADS)

Williams, Calum; Bartholomew, Richard; Rughoobur, Girish; Gordon, George S. D.; Flewitt, Andrew J.; Wilkinson, Timothy D.

2016-12-01

High-energy electron beam lithography for patterning nanostructures on insulating substrates can be challenging. For high resolution, conventional resists require large exposure doses and for reasonable throughput, using typical beam currents leads to charge dissipation problems. Here, we use UV1116 photoresist (Dow Chemical Company), designed for photolithographic technologies, with a relatively low area dose at a standard operating current (80 kV, 40-50 μC cm-2, 1 nAs-1) to pattern over large areas on commercially coated ITO-glass cover slips. The minimum linewidth fabricated was ˜33 nm with 80 nm spacing; for isolated structures, ˜45 nm structural width with 50 nm separation. Due to the low beam dose, and nA current, throughput is high. This work highlights the use of UV1116 photoresist as an alternative to conventional e-beam resists on insulating substrates. To evaluate suitability, we fabricate a range of transmissive optical devices, that could find application for customized wire-grid polarisers and spectral filters for imaging, which operate based on the excitation of surface plasmon polaritons in nanosized geometries, with arrays encompassing areas ˜0.25 cm2.

The Heidelberg compact electron beam ion traps

NASA Astrophysics Data System (ADS)

Micke, P.; Kühn, S.; Buchauer, L.; Harries, J. R.; Bücking, T. M.; Blaum, K.; Cieluch, A.; Egl, A.; Hollain, D.; Kraemer, S.; Pfeifer, T.; Schmidt, P. O.; Schüssler, R. X.; Schweiger, Ch.; Stöhlker, T.; Sturm, S.; Wolf, R. N.; Bernitt, S.; Crespo López-Urrutia, J. R.

2018-06-01

Electron beam ion traps (EBITs) are ideal tools for both production and study of highly charged ions (HCIs). In order to reduce their construction, maintenance, and operation costs, we have developed a novel, compact, room-temperature design, the Heidelberg Compact EBIT (HC-EBIT). Four already commissioned devices operate at the strongest fields (up to 0.86 T) reported for such EBITs using permanent magnets, run electron beam currents up to 80 mA, and energies up to 10 keV. They demonstrate HCI production, trapping, and extraction of pulsed Ar16+ bunches and continuous 100 pA ion beams of highly charged Xe up to charge state 29+, already with a 4 mA, 2 keV electron beam. Moreover, HC-EBITs offer large solid-angle ports and thus high photon count rates, e.g., in x-ray spectroscopy of dielectronic recombination in HCIs up to Fe24+, achieving an electron-energy resolving power of E/ΔE > 1500 at 5 keV. Besides traditional on-axis electron guns, we have also implemented a novel off-axis gun for laser, synchrotron, and free-electron laser applications, offering clear optical access along the trap axis. We report on its first operation at a synchrotron radiation facility demonstrating the resonant photoexcitation of highly charged oxygen.

Advances/applications of MAGIC and SOS

NASA Astrophysics Data System (ADS)

Warren, Gary; Ludeking, Larry; Nguyen, Khanh; Smithe, David; Goplen, Bruce

1993-12-01

MAGIC and SOS have been applied to investigate a variety of accelerator-related devices. Examples include high brightness electron guns, beam-RF interactions in klystrons, cold-test modes in an RFQ and in RF sources, and a high-quality, flexible, electron gun with operating modes appropriate for gyrotrons, peniotrons, and other RF sources. Algorithmic improvements for PIC have been developed and added to MAGIC and SOS to facilitate these modeling efforts. Two new field algorithms allow improved control of computational numerical noise and selective control of harmonic modes in RF cavities. An axial filter in SOS accelerates simulations in cylindrical coordinates. The recent addition of an export/import feature now allows long devices to be modeled in sections. Interfaces have been added to receive electromagnetic field information from the Poisson group of codes and from EGUN and to send beam information to PARMELA for subsequent tracing of bunches through beam optics. Post-processors compute and display beam properties including geometric, normalized, and slice emittances, and phase-space parameters, and video. VMS, UNIX, and DOS versions are supported, with migration underway toward windows environments.

80 A/cm2 electron beams from metal targets irradiated by KrCl and XeCl excimer lasers

NASA Astrophysics Data System (ADS)

Beloglazov, A.; Martino, M.; Nassisi, V.

1996-05-01

Due to the growing demand for high-current and long-duration electron-beam devices, laser electron sources were investigated in our laboratory. Experiments on electron-beam generation and propagation from aluminium and copper targets illuminated by XeCl (308 nm) and KrCl (222 nm) excimer lasers, were carried out under plasma ignition due to laser irradiation. This plasma supplied a spontaneous accelerating electric field of about 370 kV/m without an external accelerating voltage. By applying the modified one-dimensional Poisson equation, we computed the expected current and we also estimated the plasma concentration during the accelerating process. At 40 kV of accelerating voltage, an output current pulse of about 80 A/cm2 was detected from an Al target irradiated by the shorter wavelength laser.

Reduction of 1/f noise in graphene after electron-beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zahid Hossain, Md.; Rumyantsev, Sergey; Ioffe Physical-Technical Institute, The Russian Academy of Sciences, St. Petersburg 194021

2013-04-15

We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S{sub I}/I{sup 2} (I is the source-drain current) by an order-of magnitude at the radiation dose of 10{sup 4} {mu}C/cm{sup 2}. We analyzed the observed noise reduction in the limiting cases of the mobility andmore » carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors.« less

Revealing the 1 nm/s extensibility of nanoscale amorphous carbon in a scanning electron microscope.

PubMed

Zhang, Wei

2013-01-01

In an ultra-high vacuum scanning electron microscope, the edged branches of amorphous carbon film (∼10 nm thickness) can be continuously extended with an eye-identifying speed (on the order of ∼1 nm/s) under electron beam. Such unusual mobility of amorphous carbon may be associated with deformation promoted by the electric field, which resulted from an inner secondary electron potential difference from the main trunk of carbon film to the tip end of branches under electron beam. This result demonstrates importance of applying electrical effects to modify properties of carbon materials. It may have positive implications to explore some amorphous carbon as electron field emission device. © Wiley Periodicals, Inc.

Joint Services Electronics Program: Electronics Research at the University of Texas at Austin

DTIC Science & Technology

1990-12-31

large area 2-dimensional phased arrays , and improved beam qualities . This device structure is expected to impact laser technology over a wide range...energy. In the following pages we report on two significant accomplishments. The first involves the influence oi mirror-quantum well optical coupling on... intensity enhancements in the normal direction to the mirror of a 24 (Research Unit SSE89-1, "Growth of Ill-V Compounds by Molecular Beam Epitaxy") factor of

United States Air Force High School Apprenticeship Program. 1990 Program Management Report. Volume 3

DTIC Science & Technology

1991-04-18

User Guide Shelly Knupp 73 Computer-Aided Design (CAD) Area Christopher O’Dell 74 Electron Beam Lithography Suzette Yu 68 Flight Dynamics Laboratory 75...fabrication. I Mr. Ed Davis, for the background knowledge of device processes and I information on electron beam lithography . Captain Mike Cheney, for...researcher may write gates on to the wafer by a process called lithography . This is the most crucial and complex part of the process. Two types of proven

NbN superconducting nanonetwork fabricated using porous silicon templates and high-resolution electron beam lithography

NASA Astrophysics Data System (ADS)

Salvato, M.; Baghdadi, R.; Cirillo, C.; Prischepa, S. L.; Dolgiy, A. L.; Bondarenko, V. P.; Lombardi, F.; Attanasio, C.

2017-11-01

Superconducting NbN nanonetworks with a very small number of interconnected nanowires, with diameter of the order of 4 nm, are fabricated combining a bottom-up (use of porous silicon nanotemplates) with a top-down technique (high-resolution electron beam lithography). The method is easy to control and allows the fabrication of devices, on a robust support, with electrical properties close to a one-dimensional superconductor that can be used fruitfully for novel applications.

Insertion device and method for accurate and repeatable target insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gubeli, III, Joseph F.; Shinn, Michelle D.; Bevins, Michael E.

The present invention discloses a device and a method for inserting and positioning a target within a free electron laser, particle accelerator, or other such device that generates or utilizes a beam of energy or particles. The system includes a three-point registration mechanism that insures angular and translational accuracy and repeatability of positioning upon multiple insertions within the same structure.

An Evaluation of Bipolar Junction Transistors as Dosimeter for Megavoltage Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Passos, Renan Garcia de; Vidal da Silva, Rogerio Matias; Silva, Malana Marcelina Almeida

Dosimetry is an extremely important field in medical applications of radiation and nowadays, electron beam is a good option for superficial tumor radiotherapy. Normally, the applied dose to the patient both in diagnostic and therapy must be monitored to prevent injuries and ensure the success of the treatment, therefore, we should always look for improving of the dosimetric methods. Accordingly, the aim of this work is about the use of a bipolar junction transistor (BJT) for electron beam dosimetry. After previous studies, such an electronic device can work as a dosimeter when submitted to ionizing radiation of photon beam. Actually,more » a typical BJT consists of two PN semiconductor junctions resulting in the NPN structure device, for while, and each semiconductor is named as collector (C), base (B) and emitter (E), respectively. Although the transistor effect, which corresponds to the current amplification, be accurately described by the quantum physics, one can utilize a simple concept from the circuit theory: the base current IB (input signal) is amplified by a factor of β resulting in the collector current IC (output signal) at least one hundred times greater the IB. In fact, the BJT is commonly used as a current amplifier with gain β=I{sub C}/I{sub B}, therefore, it was noticed that this parameter is altered when the device is exposed to ionizing radiation. The current gain alteration can be explained by the trap creation and the positive charges build up, beside the degradation of the lattice structure. Then, variations of the gain of irradiated transistors may justify their use as a dosimeter. Actually, the methodology is based on the measurements of the I{sub C} variations whereas I{sub B} is maintained constant. BC846 BJT type was used for dose monitoring from passive-mode measurements: evaluation of its electrical characteristic before and after irradiation procedure. Thus, IC readings were plotted as a function of the applied dose in 6 MeV electron beam from a linear accelerator, Clinac iX. The results show that this new methodology could be an alternative to study the dose in superficial tumors in radiation oncology. (authors)« less

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Recent charge-breeding developments with EBIS/T devices (invited).

PubMed

Schwarz, S; Lapierre, A

2016-02-01

Short breeding times, narrow charge state distributions, low background, high efficiency, and the flexible time structure of the ejected low-emittance ion pulses are among the most attractive features of electron beam ion source or trap (EBIS/T) based charge breeders. Significant progress has been made to further improve these properties: Several groups are working to increase current densities towards 10(3) or even 10(4) A/cm(2). These current densities will become necessary to deliver high charge states of heavy nuclei in a short time and/or provide sufficient space-charge capacity to handle high-current ion beams in next-generation rare-isotope beam (RIB) facilities. Efficient capture of continuous beams, attractive because of its potential of handling highest-current ion beams, has become possible with the development of high-density electron beams of >1 A. Requests for the time structure of the charge bred ion pulse range from ultra-short pulses to quasi-continuous beams. Progress is being made on both ends of this spectrum, by either dividing the extracted charge in many pulse-lets, adjusting the extraction potential for a near-uniform long pulse, or adding dedicated devices to spread the ion bunches delivered from the EBIS/T in time. Advances in EBIS/T charge state breeding are summarized, including recent results with NSCL's ReA EBIS/T charge breeder.

Recent charge-breeding developments with EBIS/T devices (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwarz, S., E-mail: schwarz@nscl.msu.edu; Lapierre, A.

Short breeding times, narrow charge state distributions, low background, high efficiency, and the flexible time structure of the ejected low-emittance ion pulses are among the most attractive features of electron beam ion source or trap (EBIS/T) based charge breeders. Significant progress has been made to further improve these properties: Several groups are working to increase current densities towards 10{sup 3} or even 10{sup 4} A/cm{sup 2}. These current densities will become necessary to deliver high charge states of heavy nuclei in a short time and/or provide sufficient space-charge capacity to handle high-current ion beams in next-generation rare-isotope beam (RIB) facilities.more » Efficient capture of continuous beams, attractive because of its potential of handling highest-current ion beams, has become possible with the development of high-density electron beams of >1 A. Requests for the time structure of the charge bred ion pulse range from ultra-short pulses to quasi-continuous beams. Progress is being made on both ends of this spectrum, by either dividing the extracted charge in many pulse-lets, adjusting the extraction potential for a near-uniform long pulse, or adding dedicated devices to spread the ion bunches delivered from the EBIS/T in time. Advances in EBIS/T charge state breeding are summarized, including recent results with NSCL’s ReA EBIS/T charge breeder.« less

Plasma phenomena at magnetic neutral points

NASA Technical Reports Server (NTRS)

Sturrock, P. A.

1975-01-01

A model of the plasma focus is considered, in which large axial electric fields are induced by the imploding current sheet during the final few nanoseconds of the collapse phase. This field provides a mechanism for creation of a beam of electrons of highly suprathermal energies. For this beam, the bremsstrahlung radiation is calculated, which is expected either from electron-deuteron collisions in the focused plasma itself or from the beam as it reaches the walls of the device. Comparison with experimental results indicates that the walls are the more likely source of these hard X-rays and also find qualitative agreement of the expected angular distribution of X-rays with experiment.

Free-electron laser from wave-mechanical beats of 2 electron beams

NASA Technical Reports Server (NTRS)

Lichtenstein, R. M.

1982-01-01

It is possible, though technically difficult, to produce beams of free electrons that exhibit beats of a quantum mechanical nature. (1) the generation of electromagnetic radiation, e.g., light, based on the fact that the beats give rise to alternating charge and current densities; and a frequency shifter, based on the fact that a beam with beats constitutes a moving grating. When such a grating is exposed to external radiation of suitable frequency and direction, the reflected rediation will be shifted in frequency, since the grating is moving. A twofold increase of the frequency is readily attainable. It is shown that it is impossible to generate radiation, because the alternating electromagnetic fields that accompany the beats cannot reform themselves into freely propagating waves. The frequency shifter is useless as a practical device, because its reflectance is extremely low for realizable beams.

Methods and devices for measuring orbital angular momentum states of electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMorran, Benjamin J.; Harvey, Tyler R.

A device for measuring electron orbital angular momentum states in an electron microscope includes the following components aligned sequentially in the following order along an electron beam axis: a phase unwrapper (U) that is a first electrostatic refractive optical element comprising an electrode and a conductive plate, where the electrode is aligned perpendicular to the conductive plate; a first electron lens system (L1); a phase corrector (C) that is a second electrostatic refractive optical element comprising an array of electrodes with alternating electrostatic bias; and a second electron lens system (L2). The phase unwrapper may be a needle electrode ormore » knife edge electrode.« less

Recent advances in plasma devices based on plasma lens configuration for manipulating high-current heavy ion beams.

PubMed

Dobrovolskiy, A; Dunets, S; Evsyukov, A; Goncharov, A; Gushenets, V; Litovko, I; Oks, E

2010-02-01

We describe new results of development of novel generation cylindrical plasma devices based on the electrostatic plasma lens configuration and concept of electrons magnetic insulation. The crossed electric and magnetic fields plasma lens configuration provides us with the attractive and suitable method for establishing a stable plasma discharge at low pressure. Using plasma lens configuration in this way some cost-effective plasma devices were developed for ion treatment and deposition of exotic coatings and the effective lens was first proposed for manipulating high-current beams of negatively charged particles. Here we describe operation and features of these plasma devices, and results of theoretical consideration of mechanisms determining their optimal operation conditions.

Generation of a pulsed low-energy electron beam using the channel spark device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elgarhy, M. A. I., E-mail: elgarhy@azhar.edu.eg; Hassaballa, S. E.; Rashed, U. M.

2015-12-15

For the generation of low-energy electron beam, the design and characteristics of channel spark discharge (CSD) operating at a low voltage are presented in this paper. The discharge voltage, discharge current, X-ray emissions, and electron beam current were experimentally determined. The effects of the applied voltage, working gas pressure, and external capacitance on the CSD and beam parameters were measured. At an applied voltage of 11 kV, an oxygen gas pressure of 25 mTorr, and an external capacitance of 16.45 nF, the maximum measured current was 900 A. The discharge current increased with the increase in the pressure and capacitance,more » while its periodic time decreased with the increase in the pressure. Two types of the discharge were identified and recorded: the hollow cathode discharge and the conduction discharge. A Faraday cup was used to measure the beam current. The maximum measured beam current was 120 A, and the beam signal exhibited two peaks. The increase in both the external capacitance and the applied discharge voltage increased the maximum electron beam current. The electron-beam pulse time decreased with the increase in the gas pressure at a constant voltage and increased with the decrease in the applied discharge voltage. At an applied voltage of 11 kV and an oxygen gas pressure of 15 mTorr, the maximum beam energy was 2.8 keV. The X-ray signal intensity decreased with the increase in the gas pressure and increased with the increase in the capacitance.« less

Ion-beam apparatus and method for analyzing and controlling integrated circuits

DOEpatents

Campbell, A.N.; Soden, J.M.

1998-12-01

An ion-beam apparatus and method for analyzing and controlling integrated circuits are disclosed. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal. 4 figs.

Ion-beam apparatus and method for analyzing and controlling integrated circuits

DOEpatents

Campbell, Ann N.; Soden, Jerry M.

1998-01-01

An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

Josephson junction

DOEpatents

Wendt, J.R.; Plut, T.A.; Martens, J.S.

1995-05-02

A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

Laser and Electron Beam Processing of Semiconductors: CW Beam- Recrystallized Polysilicon as a Device-Worthy Material

DTIC Science & Technology

1980-12-31

boundary is given by the thermionic emission current, kT 1 /2 qVB qVa Jth = qn (m) exp (- [exp (Kn)- 1 ] ( 1 ) where Va is the applied voltage, q is the...small applied voltage, qVa << kT, Eq. ( 1 ) reduces to Jth = LVa (2) where = q n exp - -T- q.na (3) which gives the effective grain boundary resistance...POLYSILICON AS A DEVICE-WORTHY MATERIAL BY STANFORD UNIVERSITY STANFORD, CALIFORNIA 94305 FOR THE PERIOD JANUARY 1 , 1978 THROUGH DECEMBER 31, 1980 Dr

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

SEM analysis of ionizing radiation effects in linear integrated circuits. [Scanning Electron Microscope

NASA Technical Reports Server (NTRS)

Stanley, A. G.; Gauthier, M. K.

1977-01-01

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Comparison of technologies for nano device prototyping with a special focus on ion beams: A review

NASA Astrophysics Data System (ADS)

Bruchhaus, L.; Mazarov, P.; Bischoff, L.; Gierak, J.; Wieck, A. D.; Hövel, H.

2017-03-01

Nano device prototyping (NDP) is essential for realizing and assessing ideas as well as theories in the form of nano devices, before they can be made available in or as commercial products. In this review, application results patterned similarly to those in the semiconductor industry (for cell phone, computer processors, or memory) will be presented. For NDP, some requirements are different: thus, other technologies are employed. Currently, in NDP, for many applications direct write Gaussian vector scan electron beam lithography (EBL) is used to define the required features in organic resists on this scale. We will take a look at many application results carried out by EBL, self-organized 3D epitaxy, atomic probe microscopy (scanning tunneling microscope/atomic force microscope), and in more detail ion beam techniques. For ion beam techniques, there is a special focus on those based upon liquid metal (alloy) ion sources, as recent developments have significantly increased their applicability for NDP.

High energy polarimetry of positron beams

DOE PAGES

Gaskell, D.

2018-05-01

Møller and Compton polarimetry are the primary techniques used for high energy electron polarimetry at Jefferson Lab. Both techniques can also be used for positron polarimetry, in principle. However, some modifications to the configuration and/or operating mode of the existing devices will likely be required for use with the types of positron beams currently under consideration at Jefferson Lab.

High energy polarimetry of positron beams

NASA Astrophysics Data System (ADS)

Gaskell, D.

2018-05-01

Møller and Compton polarimetry are the primary techniques used for high energy electron polarimetry at Jefferson Lab. In principle, both techniques can also be used for positron polarimetry. However, some modifications to the configuration and/or operating mode of the existing devices will likely be required for use with the types of positron beams currently under consideration at Jefferson Lab.

GHz-THz Electronics

DTIC Science & Technology

2013-03-07

Approved for public release; distribution is unlimited Molecular Beam Epitaxy of α-Sn on InSb Arnold Kiefer & Bruce Claflin, AFRL/RYDH Unique...Schlom & Kyle Shen (Cornell) Tight coupling of molecular - beam epitaxy (MBE) and angle-resolved photoelectron spectroscopy (ARPES) reveals metal...Materials & Devices Beyond Graphene Jim Hwang, Gernot Pomrenke, Joycelyn Harrison & Misoon Mah (AFOSR) 3D VCSEL Heterostructure h-BN/Graphene/h-BN

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

2002-01-01

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Defect and field-enhancement characterization through electron-beam-induced current analysis

NASA Astrophysics Data System (ADS)

Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled; Kato, Yukako; Yoshitake, Tsuyoshi; Mokuno, Yoshiaki; Gheeraert, Etienne

2017-05-01

To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by electron-beam-induced current (EBIC) analysis. The nonuniform distribution of the electrical field was revealed by bright spots on the laterally expanded depletion layer of the EBIC intensity map when the applied electrical field exceeded 0.95 MV/cm. The nonuniformity is partly due to a structural effect: the roughness at the edge of the Schottky electrode, induced by lithography and lift-off processes. A second family of spots was shown to increase the leakage current of the device. The time constant associated with this second spot family was 0.98 ms, which is three orders of magnitude shorter than that for defects previously characterized by deep-level transient spectroscopy.

Joint Services Electronics Program.

DTIC Science & Technology

1983-09-30

environment. The research is under three interrelated heads: (1) algebraic Methodologies for Control Systems design , both linear and non -linear, (2) robust...properties of the device. After study of these experimental results, we plan to design a millimeter- wave version of the Gunn device. This will...appropriate dose discretization level for an adju- stable width beam. 2) Experimental Device Fabrication In a collaborative effort with the IC design group

In situ manufacture of magnetic tunnel junctions by a direct-write process

NASA Astrophysics Data System (ADS)

Costanzi, Barry N.; Riazanova, Anastasia V.; Dan Dahlberg, E.; Belova, Lyubov M.

2014-06-01

In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

The Direct Digital Modulation of Traveling Wave Tubes

NASA Technical Reports Server (NTRS)

Radhamohan, Ranjan S.

2004-01-01

Traveling wave tube (TWT) technology, first described by Rudolf Kompfner in the early 1940s, has been a key component of space missions from the earliest communication satellites in the 1960s to the Cassini probe today. TWTs are essentially signal amplifiers that have the special capability of operating at microwave frequencies. The microwave frequency range, which spans from approximately 500 MHz to 300 GHz, is shared by many technologies including cellular phones, satellite television, space communication, and radar. TWT devices are superior in reliability, weight, and efficiency to solid-state amplifiers at the high power and frequency levels required for most space missions. TWTs have three main components -an electron gun, slow wave structure, and collector. The electron gun generates an electron beam that moves along the length of the tube axis, inside of the slow wave circuit. At the same time, the inputted signal is slowed by its travel through the coils of the helical slow wave circuit. The interaction of the electron beam and this slowed signal produces a transfer of kinetic energy to the signal, and in turn, amplification. At the end of its travel, the spent electron beam moves into the collector where its remaining energy is dissipated as heat or harnessed for reuse. TWTs can easily produce gains in the tens of decibels, numbers that are suitable for space missions. To date, however, TWTs have typically operated at fixed levels of gain. This gain is determined by various, unchanging, physical factors of the tube. Traditionally, to achieve varying gain, an input signal s amplitude has had to first be modulated by a separate device before being fed into the TWT. This is not always desirable, as significant distortion can occur in certain situations. My mentor, Mr. Dale Force, has proposed an innovative solution to this problem called direct digital modulation . The testing and implementation of this solution is the focus of my summer internship. The direct digital modulation of a TWT removes the need for a separate amplitude modulation device. Instead, different levels of gain are achieved by varying the electron beam current. The lower the current, the less kinetic energy is available to be transferred to the signal. To vary the current, a grid is placed in-between the electron gun and the slow wave circuit. By changing the voltage across the grid, the electron beam current can be controlled. Grid technology has mostly been used in pulse applications such as radar, where only two voltage states are necessary. For direct digital modulation, however, a continuous range of voltages is required.

Interaction of high-energy beams with magnetized plasma: feasibility study for laboratory experiments

NASA Astrophysics Data System (ADS)

Roytershteyn, V.; Delzanno, G. L.; Dorfman, S. E.; Cattell, C. A.; Van Compernolle, B.

2017-12-01

We discuss plans for an experiment that will investigate interaction of energetic electron beam with magnetized plasma. The planned experiment will be conducted on the Large Plasma Device (LAPD) at UCLA and will utilize a variable-energy (0.1-1) MeV electron beam. Such energetic beams have recently attracted renewed attention as a basis for a number of active experiments in space, largely due to possibility of overcoming limitations imposed by spacecraft charging in low-density (e.g. magnetospheric) plasma. In this talk, we will discuss theoretical and computation studies of the plasma modes excited by the beam and beam stability. Energetic beams radiate both whistler and high-frequency R-X mode via Cherenkov resonances, with the relative efficiency of coupling to R-X mode increasing with beam energy. The stability of a finite-size, modulated beam (as produced by the available beam sources) is investigated and relative significance of instabilities and direct radiation is discussed. Special attention will be paid to discussing how laboratory experiments relate to conditions in space.

Coulomb repulsion and the electron beam directed energy weapon

NASA Astrophysics Data System (ADS)

Retsky, Michael W.

2004-09-01

Mutual repulsion of discrete charged particles or Coulomb repulsion is widely considered to be an ultimate hard limit in charged particle optics. It prevents the ability to finely focus high current beams into small spots at large distances from defining apertures. A classic example is the 1970s era "Star Wars" study of an electron beam directed energy weapon as an orbiting antiballistic missile device. After much analysis, it was considered physically impossible to focus a 1000-amp 1-GeV beam into a 1-cm diameter spot 1000-km from the beam generator. The main reason was that a 1-cm diameter beam would spread to 5-m diameter at 1000-km due to Coulomb repulsion. Since this could not be overcome, the idea was abandoned. But is this true? What if the rays were reversed? That is, start with a 5-m beam converging slightly with the same nonuniform angular and energy distribution as the electrons from the original problem were spreading at 1000-km distance. Could Coulomb repulsion be overcome? Looking at the terms in computational studies, some are reversible while others are not. Based on estimates, the nonreversible terms should be small - of the order of 0.1 mm. If this is true, it is possible to design a practical electron beam directed weapon not limited by Coulomb repulsion.

Radiation Challenges for Electronics in the Vision for Space Exploration

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2006-01-01

The slides present a brief snapshot discussing electronics and exploration-related challenges. Radiation effects have been the prime target, however, electronic parts reliability issues must also be considered. Modern electronics are designed with a 3-5 year lifetime. Upscreening does not improve reliability, merely determines inherent levels. Testing costs are driven by device complexity; they increase tester complexity, beam requirements, and facility choices. Commercial devices may improve performance, but are not cost panaceas. There is need for a more cost-effective access to high energy heavy ion facilities such as NSCL and NSRL. Costs for capable test equipment can run more than $1M for full testing.

SU-E-T-447: Growth of Metal Whiskers Under External Beam Irradiation: Experimental Evidence and Implications in Medical Electronic Devices for Radiation Therapy Treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shvydka, D; Warrell, G; Parsai, E

2015-06-15

Purpose: Thin metallic protrusions, termed “whiskers,” have been identified as a cause of failure in devices ranging from satellites to pacemakers. For decades, lead was used in tin-based soldering alloys to suppress whisker formation. With the adoption of the Restriction of Hazardous Substances act and the expiration of its exemption on medical devices, including implanted medical devices (IMDs), electronic circuits are required to be lead-free as of July 2014. The effect of radiation on such soldering components remains unknown. Methods: We have irradiated a thin (150 nm) tin metal layer, deposited on a 3 mm thick glass substrate, with amore » 6 MeV medical linac (Varian TrueBeam) electron beam in five 2-hour long sessions. After receiving ∼10 kGy, whisker growth on the sample was assessed with scanning electron microscopy and compared to a reference sample not exposed to radiation. Results: After 10 hours of irradiation, the sample was found to develop intense whisker infestation, while the reference sample remained in its pristine as-deposited condition. Repeating the same irradiation schedule generated more and longer whiskers. The observed phenomenon can be explained through charge accumulation in the glass substrate, generating an electric field that promotes whisker growth. The observed substrate glass darkening under irradiation points towards development of color centers related to charge trapping. Experiments on the same type of samples with direct application of the external field in a capacitor-like setting also resulted in intense whisker growth. Conclusion: Extreme care should be taken in dealing with all electronic devices, especially IMDs, produced with lead-free solder and components, subject to radiation exposure. While in our experiments strong electric fields were intentionally generated to accelerate whisker growth over hours, in everyday use the circuit soldering may cause problems in a matter of days or months. Designated reliability testing under radiation must be conducted. This work is partially supported by NRC grant No. NRC-HQ-12-G-38-0042.« less

Electron beam transport analysis of W-band sheet beam klystron

NASA Astrophysics Data System (ADS)

Wang, Jian-Xun; Barnett, Larry R.; Luhmann, Neville C.; Shin, Young-Min; Humphries, Stanley

2010-04-01

The formation and transport of high-current density electron beams are of critical importance for the success of a number of millimeter wave and terahertz vacuum devices. To elucidate design issues and constraints, the electron gun and periodically cusped magnet stack of the original Stanford Linear Accelerator Center designed W-band sheet beam klystron circuit, which exhibited poor beam transmission (≤55%), have been carefully investigated through theoretical and numerical analyses taking advantage of three-dimensional particle tracking solvers. The re-designed transport system is predicted to exhibit 99.76% (cold) and 97.38% (thermal) beam transmission, respectively, under space-charge-limited emission simulations. The optimized design produces the required high aspect ratio (10:1) sheet beam with 3.2 A emission current with highly stable propagation. In the completely redesigned model containing all the circuit elements, more than 99% beam transmission is experimentally observed at the collector located about 160 mm distant from the cathode surface. Results are in agreement of the predictions of two ray-tracing simulators, CST PARTICLE STUDIO and OMNITRAK which also predict the observed poor transmission in the original design. The quantitative analysis presents practical factors in the modeling process to design a magnetic lens structure to stably transport the elliptical beam along the long drift tube.

Guiding and focusing of fast electron beams produced by ultra-intense laser pulse using a double cone funnel target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wen-shuai; Cai, Hong-bo, E-mail: Cai-hongbo@iapcm.ac.cn; HEDPS, Center for Applied Physics and Technology, Peking University, Beijing 100871

A novel double cone funnel target design aiming at efficiently guiding and focusing fast electron beams produced in high intensity (>10{sup 19 }W/cm{sup 2}) laser-solid interactions is investigated via two-dimensional particle-in-cell simulations. The forward-going fast electron beams are shown to be directed and focused to a smaller size in comparison with the incident laser spot size. This plasma funnel attached on the cone target guides and focuses electrons in a manner akin to the control of liquid by a plastic funnel. Such device has the potential to add substantial design flexibility and prevent inefficiencies for important applications such as fast ignition.more » Two reasons account for the collimation of fast electron beams. First, the sheath electric fields and quasistatic magnetic fields inside the vacuum gap of the double cone provide confinement of the fast electrons in the laser-plasma interaction region. Second, the interface magnetic fields inside the beam collimator further guide and focus the fast electrons during the transport. The application of this technique to cone-guided fast ignition is considered, and it is shown that it can enhance the laser energy deposition in the compressed fuel plasma by a factor of 2 in comparison with the single cone target case.« less

Slot-Antenna/Permanent-Magnet Device for Generating Plasma

NASA Technical Reports Server (NTRS)

Foster, John E.

2007-01-01

A device that includes a rectangular-waveguide/slot-antenna structure and permanent magnets has been devised as a means of generating a substantially uniform plasma over a relatively large area, using relatively low input power and a low gas flow rate. The device utilizes electron cyclotron resonance (ECR) excited by microwave power to efficiently generate plasma in a manner that is completely electrodeless in the sense that, in principle, there is no electrical contact between the plasma and the antenna. Plasmas generated by devices like this one are suitable for use as sources of ions and/or electrons for diverse material-processing applications (e.g., etching or deposition) and for ion thrusters. The absence of plasma/electrode contact essentially prevents plasma-induced erosion of the antenna, thereby also helping to minimize contamination of the plasma and of objects exposed to the plasma. Consequently, the operational lifetime of the rectangular-waveguide/ slot-antenna structure is long and the lifetime of the plasma source is limited by the lifetime of the associated charged-particle-extraction grid (if used) or the lifetime of the microwave power source. The device includes a series of matched radiating slot pairs that are distributed along the length of a plasma-source discharge chamber (see figure). This arrangement enables the production of plasma in a distributed fashion, thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for uniformity in any electron- or ion-extraction electrostatic optics. The slotted configuration of the waveguide/ antenna structure makes the device scalable to larger areas and higher powers. All that is needed for scaling up is the attachment of additional matched radiating slots along the length of the discharge chamber. If it is desired to make the power per slot remain constant in scaling up, then the input microwave power must be increased accordingly. Unlike in prior ECR microwave plasma-generating devices, there is no need for an insulating window on the antenna. Such windows are sources of contamination and gradually become ineffective as they become coated with erosion products over time. These characteristics relegate prior ECR microwave plasma-generating devices to non-ion beam, non-deposition plasma applications. In contrast, the lack of need for an insulating window in the present device makes it possible to use the device in both ion-beam (including deposition) and electron-beam applications. The device is designed so that ECR takes place above each slot and the gradient of the magnetic field at each slot is enough to prevent backflow of plasma.

Safe operating conditions for NSLS-II Storage Ring Frontends commissioning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seletskiy, S.; Amundsen, C.; Ha, K.

2015-04-02

The NSLS-II Storage Ring Frontends are designed to safely accept the synchrotron radiation fan produced by respective insertion device when the electron beam orbit through the ID is locked inside the predefined Active Interlock Envelope. The Active Interlock is getting enabled at a particular beam current known as AI safe current limit. Below such current the beam orbit can be anywhere within the limits of the SR beam acceptance. During the FE commissioning the beam orbit is getting intentionally disturbed in the particular ID. In this paper we explore safe operating conditions for the Frontends commissioning.

Review on high current 2.45 GHz electron cyclotron resonance sources (invited).

PubMed

Gammino, S; Celona, L; Ciavola, G; Maimone, F; Mascali, D

2010-02-01

The suitable source for the production of intense beams for high power accelerators must obey to the request of high brightness, stability, and reliability. The 2.45 GHz off-resonance microwave discharge sources are the ideal device to generate the requested beams, as they produce multimilliampere beams of protons, deuterons, and monocharged ions, remaining stable for several weeks without maintenance. A description of different technical designs will be given, analyzing their strength, and weakness, with regard to the extraction system and low energy beam transport line, as the presence of beam halo is detrimental for the accelerator.

Kilovoltage energy imaging with a radiotherapy linac with a continuously variable energy range.

PubMed

Roberts, D A; Hansen, V N; Thompson, M G; Poludniowski, G; Niven, A; Seco, J; Evans, P M

2012-03-01

In this paper, the effect on image quality of significantly reducing the primary electron energy of a radiotherapy accelerator is investigated using a novel waveguide test piece. The waveguide contains a novel variable coupling device (rotovane), allowing for a wide continuously variable energy range of between 1.4 and 9 MeV suitable for both imaging and therapy. Imaging at linac accelerating potentials close to 1 MV was investigated experimentally and via Monte Carlo simulations. An imaging beam line was designed, and planar and cone beam computed tomography images were obtained to enable qualitative and quantitative comparisons with kilovoltage and megavoltage imaging systems. The imaging beam had an electron energy of 1.4 MeV, which was incident on a water cooled electron window consisting of stainless steel, a 5 mm carbon electron absorber and 2.5 mm aluminium filtration. Images were acquired with an amorphous silicon detector sensitive to diagnostic x-ray energies. The x-ray beam had an average energy of 220 keV and half value layer of 5.9 mm of copper. Cone beam CT images with the same contrast to noise ratio as a gantry mounted kilovoltage imaging system were obtained with doses as low as 2 cGy. This dose is equivalent to a single 6 MV portal image. While 12 times higher than a 100 kVp CBCT system (Elekta XVI), this dose is 140 times lower than a 6 MV cone beam imaging system and 6 times lower than previously published LowZ imaging beams operating at higher (4-5 MeV) energies. The novel coupling device provides for a wide range of electron energies that are suitable for kilovoltage quality imaging and therapy. The imaging system provides high contrast images from the therapy portal at low dose, approaching that of gantry mounted kilovoltage x-ray systems. Additionally, the system provides low dose imaging directly from the therapy portal, potentially allowing for target tracking during radiotherapy treatment. There is the scope with such a tuneable system for further energy reduction and subsequent improvement in image quality.

Dose-current discharge correlation analysis in a Mather type Plasma Focus device for medical applications

NASA Astrophysics Data System (ADS)

Sumini, M.; Mostacci, D.; Tartari, A.; Mazza, A.; Cucchi, G.; Isolan, L.; Buontempo, F.; Zironi, I.; Castellani, G.

2017-11-01

In a Plasma Focus device the plasma collapses into the pinch where it reaches thermonuclear conditions for a few tens of nanoseconds, becoming a multi-radiation source. The nature of the radiation generated depends on the gas filling the chamber and the device working parameters. The self-collimated electron beam generated in the backward direction with respect to the plasma motion is one of the main radiation sources of interest also for medical applications. The electron beam may be guided against a high Z material target to produce an X-ray beam. This technique offers an ultra-high dose rate source of X-rays, able to deliver during the pinch a massive dose (up to 1 Gy per discharge for the PFMA-3 test device), as measured with EBT3 GafchromicⒸfilm tissue equivalent dosimeters. Given the stochastic behavior of the discharge process, a reliable on-line estimate of the dose-delivered is a very challenging task, in some way preventing a systematic application as a potentially interesting therapy device. This work presents an approach to linking the dose registered by the EBT3 GafchromicⒸfilms with the information contained in the signal recorded during the current discharge process. Processing the signal with the Wigner-Ville distribution, a spectrogram was obtained, displaying the information on intensity at various frequency scales, identifying the band of frequencies representative of the pinch events and define some patterns correlated with the dose.

Fast synchrotron and FEL beam monitors based on single-crystal diamond detectors and InGaAs/InAlAs quantum well devices

NASA Astrophysics Data System (ADS)

Antonelli, M.; Di Fraia, M.; Carrato, S.; Cautero, G.; Menk, R. H.; Jark, W. H.; Ganbold, T.; Biasiol, G.; Callegari, C.; Coreno, M.; De Sio, A.; Pace, E.

2013-12-01

Simultaneous photon-beam position and intensity monitoring is becoming of increasing importance for new-generation synchrotron radiation sources and free-electron lasers (FEL). Thus, novel concepts of beam diagnostics are required in order to keep such beams under control. From this perspective diamond is a promising material for the production of semitransparent in situ photon beam monitors, which can withstand the high dose rates occurring in such radiation facilities. Here, we report on the development of freestanding, single-crystal chemical-vapor-deposited diamond detectors with segmented electrodes. Due to their direct, low-energy band gap, InGaAs quantum well devices operated at room temperature may also be used as fast detectors for photons ranging from visible to X-ray. These features are valuable in low-energy and time-resolved FEL applications. In particular, a novel segmented InGaAs/InAlAs device has been developed and will be discussed. Dedicated measurements carried out on both these devices at the Elettra Synchrotron show their capability to monitor the position and the intensity of the photon beam with bunch-by-bunch temporal performances. Furthermore, preliminary tests have been performed on diamond detectors at the Fermi FEL, extracting quantitative intensity and position information for 100-fs-wide FEL pulses with a photon energy of 28.8 eV.

Plasma lens experiments at the Final Focus Test Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barletta, B.; Chattopadhyay, S.; Chen, P.

1993-04-01

We intend to carry out a series of plasma lens experiments at the Final Focus Test Beam facility at SLAC. These experiments will be the first to study the focusing of particle beams by plasma focusing devices in the parameter regime of interest for high energy colliders, and is expected to lead to plasma lens designs capable of unprecedented spot sizes. Plasma focusing of positron beams will be attempted for the first time. We will study the effects of lens aberrations due to various lens imperfections. Several approaches will be applied to create the plasma required including laser ionization andmore » beam ionization of a working gas. At an increased bunch population of 2.5 {times} 10{sup 10}, tunneling ionization of a gas target by an electron beam -- an effect which has never been observed before -- should be significant. The compactness of our device should prove to be of interest for applications at the SLC and the next generation linear colliders.« less

Characteristics of electron-wave interaction in orotron-DRG type devices at the higher modes

NASA Astrophysics Data System (ADS)

Shmatko, A. A.

The excitation of oscillations in an orotron/diffraction-radiation generator at the higher longitudinal modes of the open resonator is analyzed with allowance for the space-charge field of the electron beam, represented by Fourier series in time harmonics of the oscillation frequency. Analytical expressions for the amplitude-frequency characteristics of the starting regime are obtained, and the case of large oscillation amplitudes (where nonlinear phenomena are significant) is analyzed numerically. The collective interaction of beam electrons and the resonator field is examined. Oscillation zones are determined, and the main characteristics of oscillation excitation at the higher modes are established.

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

NASA Astrophysics Data System (ADS)

Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K.-F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

2018-02-01

We report magnetotransport measurements on magnetically doped (Bi,Sb ) 2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

Electron energy and electron trajectories in an inverse free-electron laser accelerator based on a novel electrostatic wiggler

NASA Astrophysics Data System (ADS)

Nikrah, M.; Jafari, S.

2016-06-01

We expand here a theory of a high-gradient laser-excited electron accelerator based on an inverse free-electron laser (inverse-FEL), but with innovations in the structure and design. The electrostatic wiggler used in our scheme, namely termed the Paul wiggler, is generated by segmented cylindrical electrodes with applied oscillatory voltages {{V}\\text{osc}}(t) over {{90}\\circ} segments. The inverse-FEL interaction can be described by the equations that govern the electron motion in the combined fields of both the laser pulse and Paul wiggler field. A numerical study of electron energy and electron trajectories has been made using the fourth-order Runge-Kutta method. The results indicate that the electron attains a considerable energy at short distances in this device. It is found that if the electron has got sufficient suitable wiggler amplitude intensities, it can not only gain higher energy in longer distances, but also can retain it even after the passing of the laser pulse. In addition, the results reveal that the electron energy gains different peaks for different initial axial velocities, so that a suitable small initial axial velocity of e-beam produces substantially high energy gain. With regard to the transverse confinement of the electron beam in a Paul wiggler, there is no applied axial guide magnetic field in this device.

A lithium niobate electro-optic tunable Bragg filter fabricated by electron beam lithography

NASA Astrophysics Data System (ADS)

Pierno, L.; Dispenza, M.; Secchi, A.; Fiorello, A.; Foglietti, V.

2008-06-01

We have designed and fabricated a lithium niobate tunable Bragg filter patterned by electron beam lithography and etched by reactive ion etching. Devices with 1 mm, 2 mm and 4 mm length and 360 and 1080 nm Bragg period, with 5 pm V-1 tuning efficiency, have been characterized. Some applications were identified. Optical simulation based on finite element model (FEM) software showing the optical filtering curve and the coupling factor dependence on the manufacturing parameter is reported. The tuning of the filter window position is electro-optically controlled.

Growing Cobalt Silicide Columns In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Obert W.

1991-01-01

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

418th Brookhaven Lecture

ScienceCinema

Timur Shaftan

2017-12-09

The NSLS-II project will establish a third-generation light source at Brookhaven Lab, increasing beam-line brightness by 10,000. Achieving and maintaining this will involve tightly focusing the electron beam, providing the most efficient insertion devices, and achieving and maintaining a high electron current. In this talk, the various sub-systems of NSLS-II will be reviewed, and the requirements and key elements of their design will be discussed. In addition, the a small prototype of a light source of a different kind that was developed by the NSLS will also be discussed.

Emitron: microwave diode

DOEpatents

Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

1982-05-06

The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

Some performance tests of a microarea AES. [Auger Electron Spectroscopy

NASA Technical Reports Server (NTRS)

Todd, G.; Poppa, H.

1978-01-01

An Auger electron spectroscopy (AES) system which has a submicron analysis capability is described. The system provides secondary electron imaging, as well as micro- and macro-area AES. The resolution of the secondary electron image of an oxidized Al contact pad on a charge-coupled device chip indicates a primary beam size of about 1000 A. For Auger mapping, a useful resolution of about 4000 A is reported

The effect of defects produced by electron irradiation on the electrical properties of graphene and MoS2

NASA Astrophysics Data System (ADS)

Rodriguez-Manzo, Julio Alejandro; Balan, Adrian; Nayor, Carl; Parkin, Will; Puster, Matthew; Johnson, A. T. Charlie; Drndic, Marija

2015-03-01

We present a study of the effects of the defects produced by electron irradiation on the electrical and crystalline properties of graphene and MoS2 monolayers. We realized back or side gated electrical devices from monolayer MoS2 or graphene crystals (triangles respectively hexagons) suspended on a 50nm SiNx m. The devices are exposed to electron irradiation inside a 200kV transmission electron microscope (TEM) and we perform in situ conductance measurements. The number of defects and the quality of the crystalline lattice obtained by diffraction are correlated with the observed decrease in mobility and conductivity of the devices. We observe a different behavior between MoS2 and graphene, and try to associate this with different models for conduction with defects. Finally, we use the TEM electron beam to tailor the macroscopic layers into ribbons to be used as the sensing element in MoS2 nanoribbon - nanopore devices for DNA detection and sequencing.

Comparative study of radiation emission without and with target in a 2.2 kJ plasma focus device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Muhammad Zubair, E-mail: mzubairkhan-um76@yahoo.com; Ling, Yap Seong; San, Wong Chiow

The radiation emission in a 2.2 kJ Mather-type dense plasma focus device is investigated using a five channel BPX65 PIN diode spectrometer. Estimated X-ray associated with the hollow anode without and with target in Argon gas medium is compared. At optimum conditions, the radiation emission from the system is found to be strongly influenced with target in hollow anode and the filling gas pressure. The maximum X-ray yield in 4π sr was obtained in case of hollow anode in argon gas medium with target 'Lead' due to interaction of electron beam. Results indicated that an appropriate design of hollow anodemore » with target could enhance the radiation emission by more intense interaction of expected electron beam with target. The outcomes are helpful in designing a plasma focus with enhanced X-ray radiation with improved shot to shot reproducibility in plasma focus device.« less

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

PubMed

Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

2017-02-08

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder

NASA Technical Reports Server (NTRS)

Baer, James

2012-01-01

A document discusses a liquid crystal variable retarder, an electro-optic element that changes the polarization of an optical beam in response to a low-voltage electronic signal. This device can be fabricated so that the element creates, among other states, a half-wave of retardance that can be reduced to a very small retardance. When aligned to a polarized source, this can act to rotate the polarization by 90 in one state, but generate no rotation in the other state. If the beam is then incident on a polarization beam splitter, it will efficiently switch from one path to the other when the voltage is applied. The laser beam switching system has no moving parts, improving reliability over mechanical switching. It is low cost, tolerant of high laser power density, and needs only simple drive electronics, minimizing the required system resources.

Development of a He- and He0 beam source for alpha particle measurement in a burning plasma.

PubMed

Tanaka, N; Sasao, M; Terai, K; Okamoto, A; Kitajima, S; Yamaoka, H; Wada, M

2012-02-01

Proof of principle experiments of neutral helium beam production for alpha particle diagnostics was carried out on a test stand. Negative helium ions were produced in the Li charge exchange cell, in which stable and long time operation was possible. He(-) beam was accelerated to 157 keV. Finally, He(0) beam was successfully produced after the flight in the drift-tube through the auto-electron-detachment process from He(-) to He(0). A neutral beam detector using a pyroelectric device was also developed to measure He(0) beam intensity. The metastable component in the neutral helium beam was found to be less than 2%.

Compact FEL-driven inverse compton scattering gamma-ray source

DOE PAGES

Placidi, M.; Di Mitri, Simone; Pellegrini, C.; ...

2017-02-28

Many research and applications areas require photon sources capable of producing gamma-ray beams in the multi-MeV energy range with reasonably high fluxes and compact footprints. Besides industrial, nuclear physics and security applications, a considerable interest comes from the possibility to assess the state of conservation of cultural assets like statues, columns etc., via visualization and analysis techniques using high energy photon beams. Computed Tomography scans, widely adopted in medicine at lower photon energies, presently provide high quality three-dimensional imaging in industry and museums. We explore the feasibility of a compact source of quasi-monochromatic, multi-MeV gamma-rays based on Inverse Compton Scatteringmore » (ICS) from a high intensity ultra-violet (UV) beam generated in a free-electron laser by the electron beam itself. This scheme introduces a stronger relationship between the energy of the scattered photons and that of the electron beam, resulting in a device much more compact than a classic ICS for a given scattered energy. As a result, the same electron beam is used to produce gamma-rays in the 10–20 MeV range and UV radiation in the 10–15 eV range, in a ~4 × 22 m 2 footprint system.« less

Compact FEL-driven inverse compton scattering gamma-ray source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, M.; Di Mitri, Simone; Pellegrini, C.

Many research and applications areas require photon sources capable of producing gamma-ray beams in the multi-MeV energy range with reasonably high fluxes and compact footprints. Besides industrial, nuclear physics and security applications, a considerable interest comes from the possibility to assess the state of conservation of cultural assets like statues, columns etc., via visualization and analysis techniques using high energy photon beams. Computed Tomography scans, widely adopted in medicine at lower photon energies, presently provide high quality three-dimensional imaging in industry and museums. We explore the feasibility of a compact source of quasi-monochromatic, multi-MeV gamma-rays based on Inverse Compton Scatteringmore » (ICS) from a high intensity ultra-violet (UV) beam generated in a free-electron laser by the electron beam itself. This scheme introduces a stronger relationship between the energy of the scattered photons and that of the electron beam, resulting in a device much more compact than a classic ICS for a given scattered energy. As a result, the same electron beam is used to produce gamma-rays in the 10–20 MeV range and UV radiation in the 10–15 eV range, in a ~4 × 22 m 2 footprint system.« less

Linear inductive voltage adders (IVA) for advanced hydrodynamic radiography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, M.G.; Boyes, J.D.; Johnson, D.L.

The electron beam which drifts through the multiple cavities of conventional induction linacs (LIA) is replaced in an IVA by a cylindrical metal conductor which extends along the entire length of the device and effectuates the addition of the accelerator cavity voltages. In the approach to radiography, the linear inductive voltage adder drives a magnetically immersed electron diode with a millimeter diameter cathode electrode and a planar anode/bremsstrahlung converter. Both anode and cathode electrodes are immersed in a strong (15--50 T) solenoidal magnetic field. The electron beam cross section is approximately of the same size as the cathode needle andmore » generates a similar size, very intense x-ray beam when it strikes the anode converter. An IVA driven diode can produce electron beams of equal size and energy as a LIA but with much higher currents (40--50 kA versus 4--5 kA), simpler hardware and thus lower cost. The authors present here first experimental validations of the technology utilizing HERMES 3 and SABRE IVA accelerators. The electron beam voltage and current were respectively of the order of 10 MV and 40 kA. X-ray doses of up to 1 kR {at} 1 m and spot sizes as small as 1.7 mm (at 200 R doses) were measured.« less

Technical options for high average power free electron milimeter-wave and laser devices

NASA Technical Reports Server (NTRS)

Swingle, James C.

1989-01-01

Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.

Beam heated linear theta-pinch device for producing hot plasmas

DOEpatents

Bohachevsky, Ihor O.

1981-01-01

A device for producing hot plasmas comprising a single turn theta-pinch coil, a fast discharge capacitor bank connected to the coil, a fuel element disposed along the center axis of the coil, a predetermined gas disposed within the theta-pinch coil, and a high power photon, electron or ion beam generator concentrically aligned to the theta-pinch coil. Discharge of the capacitor bank generates a cylindrical plasma sheath within the theta-pinch coil which heats the outer layer of the fuel element to form a fuel element plasma layer. The beam deposits energy in either the cylindrical plasma sheath or the fuel element plasma layer to assist the implosion of the fuel element to produce a hot plasma.

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

NASA Astrophysics Data System (ADS)

Tian, Yaolan; Isotalo, Tero J.; Konttinen, Mikko P.; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J.

2017-02-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned.

Measurements verifying the optics of the Electron Drift Instrument

NASA Astrophysics Data System (ADS)

Kooi, Vanessa M.

This thesis concentrates on laboratory measurements of the Electron Drift Instrument (EDI), focussing primarily on the EDI optics of the system. The EDI is a device used on spacecraft to measure electric fields by emitting an electron beam and measuring the E x B drift of the returning electrons after one gyration. This drift velocity is determined using two electron beams directed perpendicular to the magnetic field returning to be detected by the spacecraft. The EDI will be used on the Magnetospheric Multi-Scale Mission. The EDI optic's testing process takes measurements of the optics response to a uni-directional electron beam. These measurements are used to verify the response of the EDI's optics and to allow for the optimization of the desired optics state via simulation. The optics state tables were created in simulations and we are using these measurements to confirm their accuracy. The setup consisted of an apparatus made up of the EDI's optics and sensor electronics was secured to the two axis gear arm inside a vacuum chamber. An electron beam was projected at the apparatus which then used the EDI optics to focus the beam into the micro-controller plates and onto the circular 32 pad annular ring that makes up the sensor. The concentration of counts per pad over an interval of 1ms were averaged over 25 samples and plotted in MATLAB. The results of the measurements plotted agreed well with the simulations, providing confidence in the EDI instrument.

A Monte Carlo investigation of contaminant electrons due to a novel in vivo transmission detector.

PubMed

Asuni, G; Jensen, J M; McCurdy, B M C

2011-02-21

A novel transmission detector (IBA Dosimetry, Germany) developed as an IMRT quality assurance tool, intended for in vivo patient dose measurements, is studied here. The goal of this investigation is to use Monte Carlo techniques to characterize treatment beam parameters in the presence of the detector and to compare to those of a plastic block tray (a frequently used clinical device). Particular attention is paid to the impact of the detector on electron contamination model parameters of two commercial dose calculation algorithms. The linac head together with the COMPASS transmission detector (TRD) was modeled using BEAMnrc code. To understand the effect of the TRD on treatment beams, the contaminant electron fluence, energy spectra, and angular distributions at different SSDs were analyzed for open and non-open (i.e. TRD and block tray) fields. Contaminant electrons in the BEAMnrc simulations were separated according to where they were created. Calculation of surface dose and the evaluation of contributions from contaminant electrons were performed using the DOSXYZnrc user code. The effect of the TRD on contaminant electrons model parameters in Eclipse AAA and Pinnacle(3) dose calculation algorithms was investigated. Comparisons of the fluence of contaminant electrons produced in the non-open fields versus open field show that electrons created in the non-open fields increase at shorter SSD, but most of the electrons at shorter SSD are of low energy with large angular spread. These electrons are out-scattered or absorbed in air and contribute less to surface dose at larger SSD. Calculated surface doses with the block tray are higher than those with the TRD. Contribution of contaminant electrons to dose in the buildup region increases with increasing field size. The additional contribution of electrons to surface dose increases with field size for TRD and block tray. The introduction of the TRD results in a 12% and 15% increase in the Gaussian widths used in the contaminant electron source model of the Eclipse AAA dose algorithm. The off-axis coefficient in the Pinnacle(3) dose calculation algorithm decreases in the presence of TRD compared to without the device. The electron model parameters were modified to reflect the increase in electron contamination with the TRD, a necessary step for accurate beam modeling when using the device.

Can Coulomb repulsion for charged particle beams be overcome?

NASA Astrophysics Data System (ADS)

Retsky, Michael W.

2004-01-01

Mutual repulsion of discrete charged particles or Coulomb repulsion is widely considered to be an ultimate hard limit in charged particle optics. It prevents the ability to finely focus high current beams into a small spots at large distances from the defining apertures. A classic example is the 1970s era "Star Wars" study of an electron beam directed energy weapon as an orbiting antiballistic missile device. After much analysis, it was considered physically impossible to focus a 1000-amp 1-GeV beam into a 1-cm diameter spot 1000-km from the beam generator. The main reason was that a 1-cm diameter beam would spread to 5-m diameter at 1000-km due to Coulomb repulsion. Since this could not be overcome, the idea was abandoned. But is this true? What if the rays were reversed? That is, start with a 5-m beam converging slightly with the same nonuniform angular and energy distribution as the electrons from the original problem were spreading at 1000-km distance. Could Coulomb repulsion be overcome? Looking at the terms in computational studies, some are reversible while others are not. Since the nonreversible terms should be small, it might be possible to construct an electron beam directed energy weapon.

Design and simulation of a gyroklystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, M. S., E-mail: mschauhan.rs.ece@iitbhu.ac.in; Swati, M. V.; Jain, P. K.

2015-03-15

In the present paper, a design methodology of the gyroklystron amplifier has been described and subsequently used for the design of a typically selected 200 kW, Ka-band, four-cavity gyroklystron amplifier. This conceptual device design has been validated through the 3D particle-in-cell (PIC) simulation and nonlinear analysis. Commercially available PIC simulation code “MAGIC” has been used for the electromagnetic study at the different location of the device RF interaction structure for the beam-absent case, i.e., eigenmode study as well as for the electron beam and RF wave interaction behaviour study in the beam present case of the gyroklystron. In addition, a practicalmore » problem of misalignment of the RF cavities with drift tubes within the tube has been also investigated and its effect on device performance studied. The analytical and simulation results confirmed the validity of the gyroklystron device design. The PIC simulation results of the present gyroklystron produced a stable RF output power of ∼218 kW for 0% velocity spread at 35 GHz, with ∼45 dB gain, 37% efficiency, and a bandwidth of 0.3% for a 70 kV, 8.2 A gyrating electron beam. The simulated values of RF output power have been found in agreement with the nonlinear analysis results within ∼5%. Further, the PIC simulation has been extended to study a practical problem of misalignment of the cavities axis and drift tube axis of the gyroklystron amplifier and found that the RF output power is more sensitive to misalignments in comparison to the device bandwidth. The present paper, gyroklystron device design, nonlinear analysis, and 3D PIC simulation using commercially available code had been systematically described would be of use to the high-power gyro-amplifier tube designers and research scientists.« less

A nanofabricated wirescanner with free standing wires: Design, fabrication and experimental results

NASA Astrophysics Data System (ADS)

Veronese, M.; Grulja, S.; Penco, G.; Ferianis, M.; Fröhlich, L.; Dal Zilio, S.; Greco, S.; Lazzarino, M.

2018-05-01

Measuring the transverse size of electron beams is of crucial importance in modern accelerators, from large colliders to free electron lasers to storage rings. For this reason several kind of beam instrumentation have been developed such as optical transition radiation screens, scintillating screens, laser scanners and wire scanners. The last ones although providing only a multishot profile in one plane have demonstrated a very high resolution. Wirescanners employ thin wires with typical thickness of the order of tens of microns that are scanned across the beam, whilst ionizing radiation generated from the impact of the electrons with the wires is detected. In this paper we describe a new approach to wirescanners design based on nanofabrication technologies opening new possibilities in term of wire shape, size, material and thickness with potential for sub-micron resolution and increase flexibility for instrumentation designers. We present a device fitted with nanofabricated wires and its fabrication process. We also report the measurements performed on the FERMI FEL electron beam with the goal of providing an online profile measurement without perturbing the FEL.

Preliminary experimental investigation of a Ku-band radial line oscillator based on transition radiation effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, Fangchao, E-mail: dangfangchao@sina.com; Zhang, Xiaoping; Zhong, Huihuang

2015-09-15

A Ku-band radial line oscillator (RLO) with low guiding magnetic field was proposed in our previous work. In order to weaken the impedance mismatch between the oscillator and an intense electron accelerator with higher impedance, a transverse electromagnetic reflector is added to improve the RLO, which is favorable to increase the Q-factor and accelerate the device saturation. A preliminary experiment is carried out to investigate the performance of the improved RLO. The radial-radiated electron beam is restrained well under the designed guiding magnetic field of 0.52 T. The preliminary experimental results indicates that high power microwaves with a power of 120 MWmore » and a frequency of 14.12 GHz are generated when the diode voltage is 420 kV and the beam current 14.2 kA. The experimental results suggest the feasibility of the presented RLO generating high power microwaves at a high frequency band. Additionally, more work is needed regarding promotion of the electron beam quality and the impedance match between the electron beam accelerator and the oscillator.« less

Modeling of a Compact Terahertz Source based on the Two-Stream Instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Svimonishvili, Tengiz

2016-05-17

THz radiation straddles the microwave and infrared bands of the electromagnetic spectrum, thus combining the penetrating power of lower-frequency waves and imaging capabilities of higher-energy infrared radiation. THz radiation is employed in various elds such as cancer research, biology, agriculture, homeland security, and environmental monitoring. Conventional vacuum electronic sources of THz radiation (e.g., fast- and slow-wave devices) either require very small structures or are bulky and expensive to operate. Optical sources necessitate cryogenic cooling and are presently capable of producing milliwatt levels of power at THz frequencies. We propose a millimeter and sub-millimeter wave source based on a well-known phenomenonmore » called the two-stream instability. The two-beam source relies on lowenergy and low-current electron beams for operation. Also, it is compact, simple in design, and does not contain expensive parts that require complex machining and precise alignment. In this dissertation, we perform 2-D particle-in-cell (PIC) simulations of the interaction region of the two-beam source. The interaction region consists of a beam pipe of radius ra and two electron beams of radius rb co-propagating and interacting inside the pipe. The simulations involve the interaction of unmodulated (no initial energy modulation) and modulated (energy-modulated, seeded at a given frequency) electron beams. In addition, both cold (monoenergetic) and warm (Gaussian) beams are treated.« less

Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride

NASA Astrophysics Data System (ADS)

Khan, Muhammad Raziuddin A.

Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.

NOTE: A method for controlling image acquisition in electronic portal imaging devices

NASA Astrophysics Data System (ADS)

Glendinning, A. G.; Hunt, S. G.; Bonnett, D. E.

2001-02-01

Certain types of camera-based electronic portal imaging devices (EPIDs) which initiate image acquisition based on sensing a change in video level have been observed to trigger unreliably at the beginning of dynamic multileaf collimation sequences. A simple, novel means of controlling image acquisition with an Elekta linear accelerator (Elekta Oncology Systems, Crawley, UK) is proposed which is based on illumination of a photodetector (ORP-12, Silonex Inc., Plattsburgh, NY, USA) by the electron gun of the accelerator. By incorporating a simple trigger circuit it is possible to derive a beam on/off status signal which changes at least 100 ms before any dose is measured by the accelerator. The status signal does not return to the beam-off state until all dose has been delivered and is suitable for accelerator pulse repetition frequencies of 50-400 Hz. The status signal is thus a reliable means of indicating the initiation and termination of radiation exposure, and thus controlling image acquisition of such EPIDs for this application.

Prediction of Spin-Polarization Effects in Quantum Wire Transport

NASA Astrophysics Data System (ADS)

Fasol, Gerhard; Sakaki, Hiroyuki

1994-01-01

We predict a new effect for transport in quantum wires: spontaneous spin polarization. Most work on transport in mesoscopic devices has assumed a model of non interacting, spin-free electrons. We introduce spin, electron pair scattering and microscopic crystal properties into the design of mesoscopic devices. The new spin polarization effect results from the fact that in a single mode quantum wire, electron and hole bands still have two spin subbands. In general, these two spin subbands are expected to be split even in zero magnetic field. At sufficiently low temperatures the electron pair scattering rates for one spin subband ( e.g., the spin-down) can be much larger than for the other spin subband. This effect can be used for an active spin polarizer device: hot electrons in one subband ( e.g., `spin up') pass with weak pair scattering, while electrons in the opposite subband ( e.g., `spin down'), have high probability of scattering into the `spin-up' subband, resulting in spin polarization of a hot electron beam.

Design technique for all-dielectric non-polarizing beam splitter plate

NASA Astrophysics Data System (ADS)

Rizea, A.

2012-03-01

There are many situations when, for the proper working, an opto-electronic device requiring optical components does not change the polarization state of light after a reflection, splitting or filtering. In this paper, a design for a non-polarizing beam splitter plate is proposed. Based on certain optical properties of homogeneous dielectric materials we will establish a reliable thin film package formula, excellent for the start of optimization to obtain a 20-nm bandwidth non-polarizing beam splitter.

Line-edge quality optimization of electron beam resist for high-throughput character projection exposure utilizing atomic force microscope analysis

NASA Astrophysics Data System (ADS)

Ikeno, Rimon; Mita, Yoshio; Asada, Kunihiro

2017-04-01

High-throughput electron-beam lithography (EBL) by character projection (CP) and variable-shaped beam (VSB) methods is a promising technique for low-to-medium volume device fabrication with regularly arranged layouts, such as standard-cell logics and memory arrays. However, non-VLSI applications like MEMS and MOEMS may not fully utilize the benefits of CP method due to their wide variety of layout figures including curved and oblique edges. In addition, the stepwise shapes that appear on such irregular edges by VSB exposure often result in intolerable edge roughness, which may degrade performances of the fabricated devices. In our former study, we proposed a general EBL methodology for such applications utilizing a combination of CP and VSB methods, and demonstrated its capabilities in electron beam (EB) shot reduction and edge-quality improvement by using a leading-edge EB exposure tool, ADVANTEST F7000S-VD02, and high-resolution Hydrogen Silsesquioxane resist. Both scanning electron microscope and atomic force microscope observations were used to analyze quality of the resist edge profiles to determine the influence of the control parameters used in the exposure-data preparation process. In this study, we carried out detailed analysis of the captured edge profiles utilizing Fourier analysis, and successfully distinguish the systematic undulation by the exposed CP character profiles from random roughness components. Such capability of precise edge-roughness analysis is useful to our EBL methodology to maintain both the line-edge quality and the exposure throughput by optimizing the control parameters in the layout data conversion.

Practical use of a plastic scintillator for quality assurance of electron beam therapy.

PubMed

Yogo, Katsunori; Tatsuno, Yuya; Tsuneda, Masato; Aono, Yuki; Mochizuki, Daiki; Fujisawa, Yoshiki; Matsushita, Akihiro; Ishigami, Minoru; Ishiyama, Hiromichi; Hayakawa, Kazushige

2017-06-07

Quality assurance (QA) of clinical electron beams is essential for performing accurate and safe radiation therapy. However, with advances in radiation therapy, QA has become increasingly labor-intensive and time-consuming. In this paper, we propose a tissue-equivalent plastic scintillator for quick and easy QA of clinical electron beams. The proposed tool comprises a plastic scintillator plate and a charge-coupled device camera that enable the scintillation light by electron beams to be recorded with high sensitivity and high spatial resolution. Further, the Cerenkov image is directly subtracted from the scintillation image to discriminate Cerenkov emissions and accurately measure the dose profiles of electron beams with high spatial resolution. Compared with conventional methods, discrepancies in the depth profile improved from 7% to 2% in the buildup region via subtractive corrections. Further, the output brightness showed good linearity with dose, good reproducibility (deviations below 1%), and dose rate independence (within 0.5%). The depth of 50% dose measured with the tool, an index of electron beam quality, was within  ±0.5 mm of that obtained with an ionization chamber. Lateral brightness profiles agreed with the lateral dose profiles to within 4% and no significant improvement was obtained using Cerenkov corrections. Field size agreed to within 0.5 mm with those obtained with ionization chamber. For clinical QA of electron boost treatment, a disk scintillator that mimics the shape of a patient's breast is applied. The brightness distribution and dose, calculated using a treatment planning system, was generally acceptable for clinical use, except in limited zones. Overall, the proposed plastic scintillator plate tool efficiently performs QA for electron beam therapy and enables simultaneous verification of output constancy, beam quality, depth, and lateral dose profiles during monthly QAs at lower doses of irradiation (small monitor units, MUs).

Storage Reliability of Missile Materiel Program. Storage Reliability Analysis Summary Report. Volume 1. Electrical and Electronic Devices

DTIC Science & Technology

1978-01-01

silicon nitride seals the devices from sodium and since the platinum silicide and titanium metals also offer very low mobility to the alkaline ions, the...of bipolar devices. These materials act as gettering agents for sodium ions, thus making the contamination far less mobile. The stability of the...parameter instability. Silicon nitride has been shown to be an effective barrier to sodium migration. In Beam Lead Sealed Junction (BLSJ) devices, the

New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam Irradiation.

PubMed

Cho, Youngseung; Ji, Hyunjin; Kim, Hyoungsub; Yoon, Jinsuop; Choi, Byoungdeog

2018-09-01

This study provides new insight into mechanisms of ionic reactions on the surface of ZnO nanorod networks, which could result in enhanced performance in optical or molecular sensors. The current- voltage characteristics of ZnO nanorod network devices exhibit typical nonlinear behavior in air, which implies the formation of a Schottky barrier when metals are used as contacts. The conductance of the device increased significantly in vacuum, which can be explained by the desorption of hydroxyl groups at very low pressure. While physisorbed water or oxygen-related ions can detach from the ZnO surface during evacuation, exposure to high energy in the electron beam is believed to detach the chemisorbed anions of O- and O-2 from the surface of ZnO nanorods, which releases more electrons into the channel. The increase in available electrons enhances the conductance of the ZnO nanorods. Slow initialization of the conductance under ambient conditions indicates that the ionic re-adsorption is inactive under these conditions. Thus, the electron irradiation process can be used to reset the surface ionic molecules on metal oxide nano-structures by tuning the surface potential prior to the passivation process.

Langmuir instability in partially spin polarized bounded degenerate plasma

NASA Astrophysics Data System (ADS)

Iqbal, Z.; Jamil, M.; Murtaza, G.

2018-04-01

Some new features of waves inside the cylindrical waveguide on employing the separated spin evolution quantum hydrodynamic model are evoked. Primarily, the instability of Langmuir wave due to the electron beam in a partially spin polarized degenerate plasma considering a nano-cylindrical geometry is discussed. Besides, the evolution of a new spin-dependent wave (spin electron acoustic wave) due to electron spin polarization effects in the real wave spectrum is elaborated. Analyzing the growth rate, it is found that in the absence of Bohm potential, the electron spin effects or exchange interaction reduce the growth rate as well as k-domain but the inclusion of Bohm potential increases both the growth rate and k-domain. Further, we investigate the geometry effects expressed by R and pon and find that they have opposite effects on the growth rate and k-domain of the instability. Additionally, how the other parameters like electron beam density or streaming speed of beam electrons influence the growth rate is also investigated. This study may find its applications for the signal analysis in solid state devices at nanoscales.

High Power Particle Beams and Pulsed Power for Industrial Applications

NASA Astrophysics Data System (ADS)

Bluhm, Hansjoachim; An, Wladimir; Engelko, Wladimir; Giese, Harald; Frey, Wolfgang; Heinzel, Annette; Hoppé, Peter; Mueller, Georg; Schultheiss, Christoph; Singer, Josef; Strässner, Ralf; Strauß, Dirk; Weisenburger, Alfons; Zimmermann, Fritz

2002-12-01

Several industrial scale projects with economic and ecologic potential are presently emanating from research and development in the fields of high power particle beams and pulsed power in Europe. Material surface modifications with large area pulsed electron beams are used to protect high temperature gas turbine blades and steel structures in Pb/Bi cooled accelerator driven nuclear reactor systems against oxidation and corrosion respectively. Channel spark electron beams are applied to deposit bio-compatible or bio-active layers on medical implants. Cell membranes are perforated with strong pulsed electric fields to extract nutritive substances or raw materials from the cells and to kill bacteria for sterilization of liquids. Eletrodynamic fragmentation devices are developed to reutilize concrete aggregates for the production of high quality secondary concrete. All activities have a large potential to contribute to a more sustainable economy.

Electron-beam lithography with character projection technique for high-throughput exposure with line-edge quality control

NASA Astrophysics Data System (ADS)

Ikeno, Rimon; Maruyama, Satoshi; Mita, Yoshio; Ikeda, Makoto; Asada, Kunihiro

2016-07-01

The high throughput of character projection (CP) electron-beam (EB) lithography makes it a promising technique for low-to-medium volume device fabrication with regularly arranged layouts, such as for standard-cell logics and memory arrays. However, non-VLSI applications such as MEMS and MOEMS may not be able to fully utilize the benefits of the CP method due to the wide variety of layout figures including curved and oblique edges. In addition, the stepwise shapes that appear because of the EB exposure process often result in intolerable edge roughness, which degrades device performances. In this study, we propose a general EB lithography methodology for such applications utilizing a combination of the CP and variable-shaped beam methods. In the process of layout data conversion with CP character instantiation, several control parameters were optimized to minimize the shot count, improve the edge quality, and enhance the overall device performance. We have demonstrated EB shot reduction and edge-quality improvement with our methodology by using a leading-edge EB exposure tool, ADVANTEST F7000S-VD02, and a high-resolution hydrogen silsesquioxane resist. Atomic force microscope observations were used to analyze the resist edge profiles' quality to determine the influence of the control parameters used in the data conversion process.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

Experimental study on secondary electron emission characteristics of Cu

NASA Astrophysics Data System (ADS)

Liu, Shenghua; Liu, Yudong; Wang, Pengcheng; Liu, Weibin; Pei, Guoxi; Zeng, Lei; Sun, Xiaoyang

2018-02-01

Secondary electron emission (SEE) of a surface is the origin of the multipacting effect which could seriously deteriorate beam quality and even perturb the normal operation of particle accelerators. Experimental measurements on secondary electron yield (SEY) for different materials and coatings have been developed in many accelerator laboratories. In fact, the SEY is just one parameter of secondary electron emission characteristics which include spatial and energy distribution of emitted electrons. A novel experimental apparatus was set up in China Spallation Neutron Source, and an innovative method was applied to obtain the whole characteristics of SEE. Taking Cu as the sample, secondary electron yield, its dependence on beam injection angle, and the spatial and energy distribution of secondary electrons were achieved with this measurement device. The method for spatial distribution measurement was first proposed and verified experimentally. This contribution also tries to give all the experimental results a reasonable theoretical analysis and explanation.

Excitation of Ion Acoustic Waves in Plasmas with Electron Emission from Walls

NASA Astrophysics Data System (ADS)

Khrabrov, A. V.; Wang, H.; Kaganovich, I. D.; Raitses, Y.; Sydorenko, D.

2015-11-01

Various plasma propulsion devices exhibit strong electron emission from the walls either as a result of secondary processes or due to thermionic emission. To understand details of electron kinetics in plasmas with strong emission, we have performed kinetic simulations of such plasmas using EDIPIC code. We show that excitation of ion acoustic waves is ubiquitous phenomena in many different plasma configurations with strong electron emission from walls. Ion acoustic waves were observed to be generated near sheath if the secondary electron emission from the walls is strong. Ion acoustic waves were also observed to be generated in the plasma bulk due to presence of an intense electron beam propagating from the cathode. This intense electron beam can excite strong plasma waves, which in turn drive the ion acoustic waves. Research supported by the U.S. Air Force Office of Scientific Research.

Electron microscopy of electromagnetic waveforms.

PubMed

Ryabov, A; Baum, P

2016-07-22

Rapidly changing electromagnetic fields are the basis of almost any photonic or electronic device operation. We report how electron microscopy can measure collective carrier motion and fields with subcycle and subwavelength resolution. A collimated beam of femtosecond electron pulses passes through a metamaterial resonator that is previously excited with a single-cycle electromagnetic pulse. If the probing electrons are shorter in duration than half a field cycle, then time-frozen Lorentz forces distort the images quasi-classically and with subcycle time resolution. A pump-probe sequence reveals in a movie the sample's oscillating electromagnetic field vectors with time, phase, amplitude, and polarization information. This waveform electron microscopy can be used to visualize electrodynamic phenomena in devices as small and fast as available. Copyright © 2016, American Association for the Advancement of Science.

Tunable Optical True-Time Delay Devices Would Exploit EIT

NASA Technical Reports Server (NTRS)

Kulikov, Igor; DiDomenico, Leo; Lee, Hwang

2004-01-01

Tunable optical true-time delay devices that would exploit electromagnetically induced transparency (EIT) have been proposed. Relative to prior true-time delay devices (for example, devices based on ferroelectric and ferromagnetic materials) and electronically controlled phase shifters, the proposed devices would offer much greater bandwidths. In a typical envisioned application, an optical pulse would be modulated with an ultra-wideband radio-frequency (RF) signal that would convey the information that one seeks to communicate, and it would be required to couple differently delayed replicas of the RF signal to the radiating elements of a phased-array antenna. One or more of the proposed devices would be used to impose the delays and/or generate the delayed replicas of the RF-modulated optical pulse. The beam radiated or received by the antenna would be steered by use of a microprocessor-based control system that would adjust operational parameters of the devices to tune the delays to the required values. EIT is a nonlinear quantum optical interference effect that enables the propagation of light through an initially opaque medium. A suitable medium must have, among other properties, three quantum states (see Figure 1): an excited state (state 3), an upper ground state (state 2), and a lower ground state (state 1). These three states must form a closed system that exhibits no decays to other states in the presence of either or both of two laser beams: (1) a probe beam having the wavelength corresponding to the photon energy equal to the energy difference between states 3 and 1; and (2) a coupling beam having the wavelength corresponding to the photon energy equal to the energy difference between states 3 and 2. The probe beam is the one that is pulsed and modulated with an RF signal.

Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

NASA Astrophysics Data System (ADS)

Honey, S.; Naseem, S.; Ishaq, A.; Maaza, M.; Bhatti, M. T.; Wan, D.

2016-04-01

A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H+) ion beam irradiation. Ag-NWs are irradiated under H+ ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H+ ion beam-induced welding of Ag-NWs at intersecting positions. H+ ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H+ ion beam, and networks are optically transparent. Morphology also remains stable under H+ ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H+ ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. Project supported by the National Research Foundation of South Africa (NRF), the French Centre National pour la Recherche Scientifique, iThemba-LABS, the UNESCO-UNISA Africa Chair in Nanosciences & Nanotechnology, the Third World Academy of Science (TWAS), Organization of Women in Science for the Developing World (OWSDW), the Abdus Salam ICTP via the Nanosciences African Network (NANOAFNET), and the Higher Education Commission (HEC) of Pakistan.

Quantum Error Correction with a Globally-Coupled Array of Neutral Atom Qubits

DTIC Science & Technology

2013-02-01

magneto - optical trap ) located at the center of the science cell. Fluorescence...Bottle beam trap GBA Gaussian beam array EMCCD electron multiplying charge coupled device microsec. microsecond MOT Magneto - optical trap QEC quantum error correction qubit quantum bit ...developed and implemented an array of neutral atom qubits in optical traps for studies of quantum error correction. At the end of the three year

Plasma X-Ray Sources for Lithography

DTIC Science & Technology

1980-05-12

in evaluating various plasma sources. In addition, a brief analysis is given of three devices, or systems, used to produce such plasmas: the electron beam- sliding spark, the dense plasma focus and the laser produced plasma.

Combined experimental and numerical investigation of energy harness utilizing vortex induced vibration over half cylinder using piezoelectric beams

NASA Astrophysics Data System (ADS)

Ahmed, Md. Tusher; Hossain, Md. Tanver; Rahman, Md. Ashiqur

2017-06-01

Energy harvesting technology has the ability to create self-powered electronic systems that do not rely on battery power for their operation. Wind energy can be converted into electricity via a piezoelectric transducer during the air flow over a cylinder. The vortex-induced vibration over the cylinder causes the piezoelectric beam to vibrate. Thus useful electric energy at the range 0.2-0.3V is found which can be useful for self-powering small electronic devices. In the present study, prototypes of micro-energy harvester with a shape of 65 mm × 37 mm × 0.4 mm are developed and tested for airflow over D-shaped bluff body for diameters of 15, 20 and 28mm in an experimental setup consisting of a long wind tunnel of 57cm × 57cm with variable speeds of the motor for different flow velocities and the experimental setup is connected at the downstream where flow velocity is the maximum. Experimental results show that the velocity and induced voltage follows a regular linear pattern. A maximum electrical potential of 140 mV for velocity of 1.1 ms-1 at a bluff body diameter of 15 mm is observed in the energy harvester that can be applied in many practical cases for self-powering electronic devices. The simulation of this energy harvesting phenomena is then simulated using COMSOLE multi-physics. Diameter of the bluff bodies as well as flow velocity and size of cantilever beam are varied and the experimental findings are found to be in good agreement with the simulated ones. The simulations along with the experimental data show the possibility of generating electricity from vortex induced vibration and can be applied in many practical cases for self-powering electronic devices.

Dispersion-based Fresh-slice Scheme for Free-Electron Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guetg, Marc

The Fresh-slice technique improved the performance of several Self-Amplified Spontaneous Emission Free-Electron laser schemes by granting selective control on the temporal lasing slice without spoiling the other electron bunch slices. So far, the implementation required a special insertion device to create the beam yaw, called dechirper. We demonstrate a novel scheme to enable Freshslice operation based on electron energy chirp and orbit dispersion that can be implemented at any free-electron laser facility without additional hardware.

GHz laser-free time-resolved transmission electron microscopy: A stroboscopic high-duty-cycle method.

PubMed

Qiu, Jiaqi; Ha, Gwanghui; Jing, Chunguang; Baryshev, Sergey V; Reed, Bryan W; Lau, June W; Zhu, Yimei

2016-02-01

A device and a method for producing ultrashort electron pulses with GHz repetition rates via pulsing an input direct current (dc) electron beam are provided. The device and the method are based on an electromagnetic-mechanical pulser (EMMP) that consists of a series of transverse deflecting cavities and magnetic quadrupoles. The EMMP modulates and chops the incoming dc electron beam and converts it into pico- and sub-pico-second electron pulse sequences (pulse trains) at >1GHz repetition rates, as well as controllably manipulates the resulting pulses. Ultimately, it leads to negligible electron pulse phase-space degradation compared to the incoming dc beam parameters. The temporal pulse length and repetition rate for the EMMP can be continuously tunable over wide ranges. Applying the EMMP to a transmission electron microscope (TEM) with any dc electron source (e.g. thermionic, Schottky, or field-emission source), a GHz stroboscopic high-duty-cycle TEM can be realized. Unlike in many recent developments in time-resolved TEM that rely on a sample pumping laser paired with a laser launching electrons from a photocathode to probe the sample, there is no laser in the presented experimental set-up. This is expected to be a significant relief for electron microscopists who are not familiar with laser systems. The EMMP and the sample are externally driven by a radiofrequency (RF) source synchronized through a delay line. With no laser pumping the sample, the problem of the pump laser induced residual heating/damaging the sample is eliminated. As many RF-driven processes can be cycled indefinitely, sampling rates of 1-50GHz become accessible. Such a GHz stroboscopic TEM would open up a new paradigm for in situ and in operando experiments to study samples externally driven electromagnetically. Complementary to the lower (MHz) repetition rates experiments enabled by laser photocathode TEM, new experiments in the multi-GHz regime will be enabled by the proposed RF design. Because TEM is also a platform for various analytical methods, there are infinite application opportunities in energy and electronics to resolve charge (electronic and ionic) transport, and magnetic, plasmonic and excitonic dynamics in advanced functional materials. In addition, because the beam duty-cycle can be as high as ~10(-1) (or 10%), detection can be accomplished by commercially available detectors. In this article, we report an optimal design of the EMMP. The optimal design was found using an analytical generalized matrix approach in the thin lens approximation along with detailed beam dynamics taking actual realistic dc beam parameters in a TEM operating at 200keV. Copyright © 2015 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renaud, James, E-mail: james.renaud@mail.mcgill.ca; Seuntjens, Jan; Sarfehnia, Arman

Purpose: In this work, the authors describe an electron sealed water calorimeter (ESWcal) designed to directly measure absorbed dose to water in clinical electron beams and its use to derive electron beam quality conversion factors for two ionization chamber types. Methods: A functioning calorimeter prototype was constructed in-house and used to obtain reproducible measurements in clinical accelerator-based 6, 9, 12, 16, and 20 MeV electron beams. Corrections for the radiation field perturbation due to the presence of the glass calorimeter vessel were calculated using Monte Carlo (MC) simulations. The conductive heat transfer due to dose gradients and nonwater materials wasmore » also accounted for using a commercial finite element method software package. Results: The relative combined standard uncertainty on the ESWcal dose was estimated to be 0.50% for the 9–20 MeV beams and 1.00% for the 6 MeV beam, demonstrating that the development of a water calorimeter-based standard for electron beams over such a wide range of clinically relevant energies is feasible. The largest contributor to the uncertainty was the positioning (Type A, 0.10%–0.40%) and its influence on the perturbation correction (Type B, 0.10%–0.60%). As a preliminary validation, measurements performed with the ESWcal in a 6 MV photon beam were directly compared to results derived from the National Research Council of Canada (NRC) photon beam standard water calorimeter. These two independent devices were shown to agree well within the 0.43% combined relative uncertainty of the ESWcal for this beam type and quality. Absorbed dose electron beam quality conversion factors were measured using the ESWcal for the Exradin A12 and PTW Roos ionization chambers. The photon-electron conversion factor, k{sub ecal}, for the A12 was also experimentally determined. Nonstatistically significant differences of up to 0.7% were found when compared to the calculation-based factors listed in the AAPM’s TG-51 protocol. General agreement between the relative electron energy dependence of the PTW Roos data measured in this work and a recent MC-based study are also shown. Conclusions: This is the first time that water calorimetry has been successfully used to measure electron beam quality conversion factors for energies as low as 6 MeV (R{sub 50} = 2.25 cm)« less

Correction of scatter in megavoltage cone-beam CT

NASA Astrophysics Data System (ADS)

Spies, L.; Ebert, M.; Groh, B. A.; Hesse, B. M.; Bortfeld, T.

2001-03-01

The role of scatter in a cone-beam computed tomography system using the therapeutic beam of a medical linear accelerator and a commercial electronic portal imaging device (EPID) is investigated. A scatter correction method is presented which is based on a superposition of Monte Carlo generated scatter kernels. The kernels are adapted to both the spectral response of the EPID and the dimensions of the phantom being scanned. The method is part of a calibration procedure which converts the measured transmission data acquired for each projection angle into water-equivalent thicknesses. Tomographic reconstruction of the projections then yields an estimate of the electron density distribution of the phantom. It is found that scatter produces cupping artefacts in the reconstructed tomograms. Furthermore, reconstructed electron densities deviate greatly (by about 30%) from their expected values. The scatter correction method removes the cupping artefacts and decreases the deviations from 30% down to about 8%.

Rheological analysis of irradiated crosslinkable and scissionable polymers used for medical devices under different radiation conditions

NASA Astrophysics Data System (ADS)

Satti, A. J.; Ressia, J. A.; Cerrada, M. L.; Andreucetti, N. A.; Vallés, E. M.

2018-03-01

The effects on different synthetic polymers of distinct types of radiation, gamma rays and electron beam, under different atmospheres are followed by changes in their viscoelastic behavior. Taking into account the two main radioinduced reactions, crosslinking and scissioning of polymeric chains, liquid polydimethylsiloxane has been used as example of crosslinkable polymer and semi crystalline polypropylene as example of scissionable polymer. Propylene - 1-hexene copolymers have been also evaluated, and the effects of both reactions were clearly noticed. Accordingly, samples of those aforementioned polymers have been irradiated with 60Co gamma irradiation in air and under vacuum, and also with electron beam, at similar doses. Sinusoidal dynamic oscillation experiments showed a significant increase in branching and crosslinking reactions when specimens are irradiated under vacuum, while scissioning reactions were observed for the different polymers when irradiation takes place under air with either gamma irradiation or electron beam.

Measuring the orbital angular momentum spectrum of an electron beam

PubMed Central

Grillo, Vincenzo; Tavabi, Amir H.; Venturi, Federico; Larocque, Hugo; Balboni, Roberto; Gazzadi, Gian Carlo; Frabboni, Stefano; Lu, Peng-Han; Mafakheri, Erfan; Bouchard, Frédéric; Dunin-Borkowski, Rafal E.; Boyd, Robert W.; Lavery, Martin P. J.; Padgett, Miles J.; Karimi, Ebrahim

2017-01-01

Electron waves that carry orbital angular momentum (OAM) are characterized by a quantized and unbounded magnetic dipole moment parallel to their propagation direction. When interacting with magnetic materials, the wavefunctions of such electrons are inherently modified. Such variations therefore motivate the need to analyse electron wavefunctions, especially their wavefronts, to obtain information regarding the material's structure. Here, we propose, design and demonstrate the performance of a device based on nanoscale holograms for measuring an electron's OAM components by spatially separating them. We sort pure and superposed OAM states of electrons with OAM values of between −10 and 10. We employ the device to analyse the OAM spectrum of electrons that have been affected by a micron-scale magnetic dipole, thus establishing that our sorter can be an instrument for nanoscale magnetic spectroscopy. PMID:28537248

Focused electron beam based direct-write fabrication of graphene and amorphous carbon from oxo-functionalized graphene on silicon dioxide.

PubMed

Schindler, Severin; Vollnhals, Florian; Halbig, Christian E; Marbach, Hubertus; Steinrück, Hans-Peter; Papp, Christian; Eigler, Siegfried

2017-01-25

Controlled patterning of graphene is an important task towards device fabrication and thus is the focus of current research activities. Graphene oxide (GO) is a solution-processible precursor of graphene. It can be patterned by thermal processing. However, thermal processing of GO leads to decomposition and CO 2 formation. Alternatively, focused electron beam induced processing (FEBIP) techniques can be used to pattern graphene with high spatial resolution. Based on this approach, we explore FEBIP of GO deposited on SiO 2 . Using oxo-functionalized graphene (oxo-G) with an in-plane lattice defect density of 1% we are able to image the electron beam-induced effects by scanning Raman microscopy for the first time. Depending on electron energy (2-30 keV) and doses (50-800 mC m -2 ) either reduction of GO or formation of permanent lattice defects occurs. This result reflects a step towards controlled FEBIP processing of oxo-G.

Performance and applications of the 14 MEV electron radiation linac at CIAE

NASA Astrophysics Data System (ADS)

Zhai, X. L.; Chen, G. C.; Qi, B. M.; Xu, F. J.; Pan, L. H.; Zhang, Z. M.; Shi, X. Z.; Chen, J. K.; Wang, F. Y.

1993-07-01

A 14 MeV electron linear accelerator which was designed and manufactured by the China Institute of Atomic Energy (CIAE) has been modified into an radiation processing accelerator in 1987. It consists of an electron gun, two prebunchers, one buncher, a three meter long accelerating section, and a 90 degree bending magnet. The linac is S-band (2856 MHz), travelling wave accelerator driven by a Chinese-made klystron. The energy of electrons can be adjusted from 8 MeV to 18 MeV and the average beam power is about 2 kW. The beam width is 600 mm and the uniformity of scanning beam is better than 10%. The linac is used to irradiate power semiconductor devices for controlling the minority carrier lifetime (MCL). More than twenty factories and scientific institutions use this linac to irradiate silicon controlled rectifiers (SCR) and the fast recovery diodes (FRD), and more than 0.2 million pieces of SCR have been irradiated. Tests have also been carried out for colour-change of topaz.

Method and apparatus for atomic imaging

DOEpatents

Saldin, Dilano K.; de Andres Rodriquez, Pedro L.

1993-01-01

A method and apparatus for three dimensional imaging of the atomic environment of disordered adsorbate atoms are disclosed. The method includes detecting and measuring the intensity of a diffuse low energy electron diffraction pattern formed by directing a beam of low energy electrons against the surface of a crystal. Data corresponding to reconstructed amplitudes of a wave form is generated by operating on the intensity data. The data corresponding to the reconstructed amplitudes is capable of being displayed as a three dimensional image of an adsorbate atom. The apparatus includes a source of a beam of low energy electrons and a detector for detecting the intensity distribution of a DLEED pattern formed at the detector when the beam of low energy electrons is directed onto the surface of a crystal. A device responsive to the intensity distribution generates a signal corresponding to the distribution which represents a reconstructed amplitude of a wave form and is capable of being converted into a three dimensional image of the atomic environment of an adsorbate atom on the crystal surface.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

Total-dose radiation effects data for semiconductor devices, volume 2

NASA Technical Reports Server (NTRS)

Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

1981-01-01

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Status of thermoelectronic laser energy conversion, TELEC

NASA Technical Reports Server (NTRS)

Britt, E. J.

1982-01-01

A concept known as a thermo-electronic laser energy converter (TELEC), was studied as a method of converting a 10.6 micron CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma were produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

PubMed

Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš

2014-08-01

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Femtosecond Beam Sources and Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uesaka, Mitsuru

2004-12-07

Short particle beam science has been promoted by electron linac and radiation chemistry up to picoseconds. Recently, table-top TW laser enables several kinds of short particle beams and pump-and-probe analyses. 4th generation SR sources aim to generation and application of about 100 fs X-ray. Thus, femtosecond beam science has become one of the important field in advanced accelerator concepts. By using electron linac with photoinjector, about 200 fs single bunch and 3 fs multi-bunches are available. Tens femtoseconds monoenergetic electron bunch is expected by laser plasma cathode. Concerning the electron bunch diagnosis, we have seen remarkable progress in streak camera,more » coherent radiation spectroscopy, fluctuation method and E/O crystal method. Picosecond time-resolved pump-and-probe analysis by synchronizing electron linac and laser is now possible, but the timing jitter and drift due to several fluctuations in electronic devices and environment are still in picoseconds. On the other hand, the synchronization between laser and secondary beam is done passively by an optical beam-splitter in the system based on one TW laser. Therefore, the timing jitter and drift do not intrinsically exist there. The author believes that the femtosecond time-resolved pump-and-probe analysis must be initiated by the laser plasma beam sources. As to the applications, picosecond time-resolved system by electron photoinjector/linac and femtosecond laser are operating in more than 5 facilities for radiation chemistry in the world. Ti:Sapphire-laser-based repetitive pump-and-probe analysis started by time-resolved X-ray diffraction to visualize the atomic motion. Nd:Glass-laser-based single-shot analysis was performed to visualize the laser ablation via the single-shot ion imaging. The author expects that protein dynamics and ultrafast nuclear physics would be the next interesting targets. Monograph titled 'Femtosecond Beam Science' is published by Imperial College Press/World Scientific in 2004.« less

Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

NASA Astrophysics Data System (ADS)

Niu, G.; Schubert, M. A.; Sharath, S. U.; Zaumseil, P.; Vogel, S.; Wenger, C.; Hildebrandt, E.; Bhupathi, S.; Perez, E.; Alff, L.; Lehmann, M.; Schroeder, T.; Niermann, T.

2017-05-01

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

High brightness--multiple beamlets source for patterned X-ray production

DOEpatents

Leung, Ka-Ngo [Hercules, CA; Ji, Qing [Albany, CA; Barletta, William A [Oakland, CA; Jiang, Ximan [El Cerrito, CA; Ji, Lili [Albany, CA

2009-10-27

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

SU-E-T-191: Commissioning and Dosimetric Characteristics of Elekta Agility for Total Skin Electron Beam (TSEB) Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayler, E; Charpentier, P; Micaily, B

2015-06-15

Purpose The purpose of this work is to publish beam data from Elekta Synergy(R) linear accelerators with Agility(TM) MLC for total skin electron beam (TSEB) therapy using the HDRE1 (High Dose Rate Electron 6MeV) energy. Method & Materials The optimal gantry angles for TSEB were determined using ion chamber measurements along a vertical profile at 450cm SSD. After gantry angles were chosen, field uniformity was measured over the entire treatment area. Uniformity was measured with and without the patient support device, allowing the dosimetric effect of the support device to be determined. Beam output and PDD were measured at themore » calibration point (450cm SSD) for a dual beam using a parallel plate chamber in solid water. These measurements were repeated with the chamber and phantom rotated about the patient isocenter at various angles, in order to measure the contribution from oblique beams. This technique provides a precise measurement of the treatment skin dose (TSD). Lastly, ion chamber measurements were verified by film and diodes. Results The optimal gantry angle for 450 cm SSD was determined to be 90±16°. This achieved uniformity better than 96% on the vertical axis, and 92% along the horizontal axis. HDRE1 was calibrated to deliver 10 cGy/MU at standard geometry (100 cm SSD, 1.2 cm depth). Thus at TSEB geometry (450 cm SSD, 0.1 cm depth) the output of the AP dual field was measured to be 0.35 cGy/MU. The TSD of a 20 cm radius cylinder for six (equally, 60° spaced) dual fields was measured to be 1.19 cGy/MU. Percent Depth Dose data for the AP dual field and TSD are shown in Figure 2. Conclusion This paper provides a modern procedure for commissioning TSEB therapy on a linear accelerator, and clinical beam data for the Elekta Synergy(R) with Agility(TM) MLC.« less

High current table-top setup for femtosecond gas electron diffraction.

PubMed

Zandi, Omid; Wilkin, Kyle J; Xiong, Yanwei; Centurion, Martin

2017-07-01

We have constructed an experimental setup for gas phase electron diffraction with femtosecond resolution and a high average beam current. While gas electron diffraction has been successful at determining molecular structures, it has been a challenge to reach femtosecond resolution while maintaining sufficient beam current to retrieve structures with high spatial resolution. The main challenges are the Coulomb force that leads to broadening of the electron pulses and the temporal blurring that results from the velocity mismatch between the laser and electron pulses as they traverse the sample. We present here a device that uses pulse compression to overcome the Coulomb broadening and deliver femtosecond electron pulses on a gas target. The velocity mismatch can be compensated using laser pulses with a tilted intensity front to excite the sample. The temporal resolution of the setup was determined with a streak camera to be better than 400 fs for pulses with up to half a million electrons and a kinetic energy of 90 keV. The high charge per pulse, combined with a repetition rate of 5 kHz, results in an average beam current that is between one and two orders of magnitude higher than previously demonstrated.

High current table-top setup for femtosecond gas electron diffraction

DOE PAGES

Zandi, Omid; Wilkin, Kyle J.; Xiong, Yanwei; ...

2017-05-08

Here, we have constructed an experimental setup for gas phase electron diffraction with femtosecond resolution and a high average beam current. While gas electron diffraction has been successful at determining molecular structures, it has been a challenge to reach femtosecond resolution while maintaining sufficient beam current to retrieve structures with high spatial resolution. The main challenges are the Coulomb force that leads to broadening of the electron pulses and the temporal blurring that results from the velocity mismatch between the laser and electron pulses as they traverse the sample. We also present here a device that uses pulse compression tomore » overcome the Coulomb broadening and deliver femtosecond electron pulses on a gas target. The velocity mismatch can be compensated using laser pulses with a tilted intensity front to excite the sample. The temporal resolution of the setup was determined with a streak camera to be better than 400 fs for pulses with up to half a million electrons and a kinetic energy of 90 keV. Finally, the high charge per pulse, combined with a repetition rate of 5 kHz, results in an average beam current that is between one and two orders of magnitude higher than previously demonstrated.« less

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

Laser-driven electron beam acceleration and future application to compact light sources

NASA Astrophysics Data System (ADS)

Hafz, N.; Jeong, T. M.; Lee, S. K.; Pae, K. H.; Sung, J. H.; Choi, I. W.; Yu, T. J.; Jeong, Y. U.; Lee, J.

2009-07-01

Laser-driven plasma accelerators are gaining much attention by the advanced accelerator community due to the potential these accelerators hold in miniaturizing future high-energy and medium-energy machines. In the laser wakefield accelerator (LWFA), the ponderomotive force of an ultrashort high intensity laser pulse excites a longitudinal plasma wave or bubble. Due to huge charge separation, electric fields created in the plasma bubble can be several orders of magnitude higher than those available in conventional microwave and RF-based accelerator facilities which are limited (up to ˜100 MV/m) by material breakdown. Therefore, if an electron bunch is injected into the bubble in phase with its field, it will gain relativistic energies within an extremely short distance. Here, in the LWFA we show the generation of high-quality and high-energy electron beams up to the GeV-class within a few millimeters of gas-jet plasmas irradiated by tens of terawatt ultrashort laser pulses. Thus we realize approximately four orders of magnitude acceleration gradients higher than available by conventional technology. As a practical application of the stable high-energy electron beam generation, we are planning on injecting the electron beams into a few-meters long conventional undulator in order to realize compact X-ray synchrotron (immediate) and FEL (future) light sources. Stable laser-driven electron beam and radiation devices will surely open a new era in science, medicine and technology and will benefit a larger number of users in those fields.

Fabrication and In Situ Transmission Electron Microscope Characterization of Free-Standing Graphene Nanoribbon Devices.

PubMed

Wang, Qing; Kitaura, Ryo; Suzuki, Shoji; Miyauchi, Yuhei; Matsuda, Kazunari; Yamamoto, Yuta; Arai, Shigeo; Shinohara, Hisanori

2016-01-26

Edge-dependent electronic properties of graphene nanoribbons (GNRs) have attracted intense interests. To fully understand the electronic properties of GNRs, the combination of precise structural characterization and electronic property measurement is essential. For this purpose, two experimental techniques using free-standing GNR devices have been developed, which leads to the simultaneous characterization of electronic properties and structures of GNRs. Free-standing graphene has been sculpted by a focused electron beam in transmission electron microscope (TEM) and then purified and narrowed by Joule heating down to several nanometer width. Structure-dependent electronic properties are observed in TEM, and significant increase in sheet resistance and semiconducting behavior become more salient as the width of GNR decreases. The narrowest GNR width we obtained with the present method is about 1.6 nm with a large transport gap of 400 meV.

ARM-based control system for terry rapier loom

NASA Astrophysics Data System (ADS)

Shi, Weimin; Gu, Yeqing; Wu, Zhenyu; Wang, Fan

2007-12-01

In this paper, a novel ARM-based mechatronics control technique applied in terry rapier loom was presented. Electronic weft selection, electronic fluff, electronic let-off and take-up motions system, which consists of position and speedcontrolled servomechanisms, were studied. The control system configuration, operation principle, and mathematical models of electronic drives system were analyzed. The synchronism among all mechanical motions and an improved intelligent control algorithm for the warp let-off tension control was discussed. The result indict that, by applying electronic and embedded control techniques and the individual servomechanisms, the electronic weft selection, electronic let-off device and electronic take-up device in HGA732T terry rapier loom have greatly simplified the initial complicated mechanism, kept the warp tension constant from full to empty beam, set the variable weft density, eliminated the start mark effectively, promoted its flexibility, reliability and properties, and improved the fabric quality.

Characterization of Zinc Oxide (ZnO) piezoelectric properties for Surface Acoustic Wave (SAW) device

NASA Astrophysics Data System (ADS)

Rosydi Zakaria, Mohd; Johari, Shazlina; Hafiz Ismail, Mohd; Hashim, Uda

2017-11-01

In fabricating Surface Acoustic Wave (SAW) biosensors device, the substrate is one of important factors that affected to performance device. there are many types of piezoelectric substrate in the markets and the cheapest is zinc Oxide substrate. Zinc Oxide (ZnO) with its unique properties can be used as piezoelectric substrate along with SAW devices for detection of DNA in this research. In this project, ZnO thin film is deposited onto silicon oxide substrate using electron beam evaporation (E-beam) and Sol-Gel technique. Different material structure is used to compare the roughness and best piezoelectric substrate of ZnO thin film. Two different structures of ZnO target which are pellet and granular are used for e-beam deposition and one sol-gel liquid were synthesize and compared. Parameter for thickness of ZnO e-beam deposition is fixed to a 0.1kÅ for both materials structure and sol-gel was coat using spin coat technique. After the process is done, samples are annealed at temperature of 500°C for 2 hours. The structural properties of effect of post annealing using different material structure of ZnO are studied using Atomic Force Microscopic (AFM) for surface morphology and X-ray Diffraction (XRD) for phase structure.

Dissociation phenomena in electron-beam sustained carbon dioxide lasers

NASA Technical Reports Server (NTRS)

Harris, Michael R.; Willetts, David V.

1990-01-01

A number of applications are emerging requiring efficient, long pulse, long-life sealed CO2 lasers. Examples include the proposed NASA and ESA wind lidars. Electron-beam sustained discharge devices are strong contenders. Unlike self-sustained discharges, e-beam sustenance readily provides efficient performance from large volume discharges and offers pulse lengths well in excess of the microsecond or so generally associated with self-sustained devices. In the case of the e-beam sustained laser, since the plasma is externally maintained and operated at electric field strengths less than that associated with the glow to arc transition, the discharges can be run even in the presence of strongly attacking species such as O2. Build up of large levels of attacking contaminants is nevertheless undesirable as their presence reduces the current drawn by the plasma and thus the pumping rate to the upper laser level. The impedance rise leads to a mismatch of the pulse forming network with a consequent loss of control over energy deposition, operating E/N, and gain. Clearly CO2 dissociation rates, the influence of dissociation products on the discharge and gain, and tolerance of the discharge to these products need to be determined. This information can then be used to assess co-oxidation catalyst requirements for sealed operation.

Mask automation: need a revolution in mask makers and equipment industry

NASA Astrophysics Data System (ADS)

Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

2013-09-01

As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

Electron beam controlled covalent attachment of small organic molecules to graphene

NASA Astrophysics Data System (ADS)

Markevich, Alexander; Kurasch, Simon; Lehtinen, Ossi; Reimer, Oliver; Feng, Xinliang; Müllen, Klaus; Turchanin, Andrey; Khlobystov, Andrei N.; Kaiser, Ute; Besley, Elena

2016-01-01

The electron beam induced functionalization of graphene through the formation of covalent bonds between free radicals of polyaromatic molecules and C&z.dbd;C bonds of pristine graphene surface has been explored using first principles calculations and high-resolution transmission electron microscopy. We show that the energetically strongest attachment of the radicals occurs along the armchair direction in graphene to carbon atoms residing in different graphene sub-lattices. The radicals tend to assume vertical position on graphene substrate irrespective of direction of the bonding and the initial configuration. The ``standing up'' molecules, covalently anchored to graphene, exhibit two types of oscillatory motion - bending and twisting - caused by the presence of acoustic phonons in graphene and dispersion attraction to the substrate. The theoretically derived mechanisms are confirmed by near atomic resolution imaging of individual perchlorocoronene (C24Cl12) molecules on graphene. Our results facilitate the understanding of controlled functionalization of graphene employing electron irradiation as well as mechanisms of attachment of impurities via the processing of graphene nanoelectronic devices by electron beam lithography.The electron beam induced functionalization of graphene through the formation of covalent bonds between free radicals of polyaromatic molecules and C&z.dbd;C bonds of pristine graphene surface has been explored using first principles calculations and high-resolution transmission electron microscopy. We show that the energetically strongest attachment of the radicals occurs along the armchair direction in graphene to carbon atoms residing in different graphene sub-lattices. The radicals tend to assume vertical position on graphene substrate irrespective of direction of the bonding and the initial configuration. The ``standing up'' molecules, covalently anchored to graphene, exhibit two types of oscillatory motion - bending and twisting - caused by the presence of acoustic phonons in graphene and dispersion attraction to the substrate. The theoretically derived mechanisms are confirmed by near atomic resolution imaging of individual perchlorocoronene (C24Cl12) molecules on graphene. Our results facilitate the understanding of controlled functionalization of graphene employing electron irradiation as well as mechanisms of attachment of impurities via the processing of graphene nanoelectronic devices by electron beam lithography. Electronic supplementary information (ESI) available: A table showing the calculated binding energies and magnetic moments for all studied molecular radicals; details of samples preparation and characterization; time series of TEM images showing transformations of a C24Cl12 molecule on graphene under electron irradiation. See DOI: 10.1039/c5nr07539d

Traveling-Wave Tubes

NASA Technical Reports Server (NTRS)

Kory, Carol L.

1998-01-01

The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.

Fully kinetic simulations of dense plasma focus Z-pinch devices.

PubMed

Schmidt, A; Tang, V; Welch, D

2012-11-16

Dense plasma focus Z-pinch devices are sources of copious high energy electrons and ions, x rays, and neutrons. The mechanisms through which these physically simple devices generate such high-energy beams in a relatively short distance are not fully understood. We now have, for the first time, demonstrated a capability to model these plasmas fully kinetically, allowing us to simulate the pinch process at the particle scale. We present here the results of the initial kinetic simulations, which reproduce experimental neutron yields (~10(7)) and high-energy (MeV) beams for the first time. We compare our fluid, hybrid (kinetic ions and fluid electrons), and fully kinetic simulations. Fluid simulations predict no neutrons and do not allow for nonthermal ions, while hybrid simulations underpredict neutron yield by ~100x and exhibit an ion tail that does not exceed 200 keV. Only fully kinetic simulations predict MeV-energy ions and experimental neutron yields. A frequency analysis in a fully kinetic simulation shows plasma fluctuations near the lower hybrid frequency, possibly implicating lower hybrid drift instability as a contributor to anomalous resistivity in the plasma.

E-beam sterilizable thermoplastics elastomers for healthcare devices: Mechanical, morphology, and in vivo studies.

PubMed

Balaji, Ananad Bellam; Ratnam, Chantara Thevy; Khalid, Mohammad; Walvekar, Rashmi

2018-03-01

The effect of electron beam radiation on ethylene-propylene diene terpolymer/polypropylene blends is studied as an attempt to develop radiation sterilizable polypropylene/ethylene-propylene diene terpolymer blends suitable for medical devices. The polypropylene/ethylene-propylene diene terpolymer blends with mixing ratios of 80/20, 50/50, 20/80 were prepared in an internal mixer at 165°C and a rotor speed of 50 rpm/min followed by compression molding. The blends and the individual components were radiated using 3.0 MeV electron beam accelerator at doses ranging from 0 to 100 kGy in air and room temperature. All the samples were tested for tensile strength, elongation at break, hardness, impact strength, and morphological properties. After exposing to 25 and 100 kGy radiation doses, 50% PP blend was selected for in vivo studies. Results revealed that radiation-induced crosslinking is dominating in EPDM dominant blends, while radiation-induced degradation is prevailing in PP dominant blends. The 20% PP blend was found to be most compatible for 20-60 kGy radiation sterilization. The retention in impact strength with enhanced tensile strength of 20% PP blend at 20-60 kGy believed to be associated with increased compatibility between PP and EPDM along with the radiation-induced crosslinking. The scanning electron micrographs of the fracture surfaces of the PP/EPDM blends showed evidences consistent with the above contentation. The in vivo studies provide an instinct that the radiated blends are safe to be used for healthcare devices.

Seeing the invisible: direct visualization of therapeutic radiation beams using air scintillation.

PubMed

Fahimian, Benjamin; Ceballos, Andrew; Türkcan, Silvan; Kapp, Daniel S; Pratx, Guillem

2014-01-01

To assess whether air scintillation produced during standard radiation treatments can be visualized and used to monitor a beam in a nonperturbing manner. Air scintillation is caused by the excitation of nitrogen gas by ionizing radiation. This weak emission occurs predominantly in the 300-430 nm range. An electron-multiplication charge-coupled device camera, outfitted with an f/0.95 lens, was used to capture air scintillation produced by kilovoltage photon beams and megavoltage electron beams used in radiation therapy. The treatment rooms were prepared to block background light and a short-pass filter was utilized to block light above 440 nm. Air scintillation from an orthovoltage unit (50 kVp, 30 mA) was visualized with a relatively short exposure time (10 s) and showed an inverse falloff (r(2) = 0.89). Electron beams were also imaged. For a fixed exposure time (100 s), air scintillation was proportional to dose rate (r(2) = 0.9998). As energy increased, the divergence of the electron beam decreased and the penumbra improved. By irradiating a transparent phantom, the authors also showed that Cherenkov luminescence did not interfere with the detection of air scintillation. In a final illustration of the capabilities of this new technique, the authors visualized air scintillation produced during a total skin irradiation treatment. Air scintillation can be measured to monitor a radiation beam in an inexpensive and nonperturbing manner. This physical phenomenon could be useful for dosimetry of therapeutic radiation beams or for online detection of gross errors during fractionated treatments.

The rare isotope beams production at the Texas A and M university Cyclotron Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabacaru, G.; May, D. P.; Chubarian, G.

2013-04-19

The Cyclotron Institute at Texas A and M initiated an upgrade project for the production of radioactive-ion beams that incorporates a light-ion guide (LIG) and a heavy-ion guide coupled (HIG) with an Electron Cyclotron Resonance Ion Source (ECRIS) constructed for charge-boosting (CB-ECRIS). This scheme is intended to produce radioactive beams suitable for injection into the K500 superconducting cyclotron. The current status of the project and details on the ion sources and devices used in the project is presented.

An all permanent magnet electron cyclotron resonance ion source for heavy ion therapy.

PubMed

Cao, Yun; Li, Jia Qing; Sun, Liang Ting; Zhang, Xue Zhen; Feng, Yu Cheng; Wang, Hui; Ma, Bao Hua; Li, Xi Xia

2014-02-01

A high charge state all permanent Electron Cyclotron Resonance ion source, Lanzhou All Permanent ECR ion source no. 3-LAPECR3, has been successfully built at IMP in 2012, which will serve as the ion injector of the Heavy Ion Medical Machine (HIMM) project. As a commercial device, LAPECR3 features a compact structure, small size, and low cost. According to HIMM scenario more than 100 eμA of C(5+) ion beam should be extracted from the ion source, and the beam emittance better than 75 π*mm*mrad. In recent commissioning, about 120 eμA of C(5+) ion beam was got when work gas was CH4 while about 262 eμA of C(5+) ion beam was obtained when work gas was C2H2 gas. The design and construction of the ion source and its low-energy transportation beam line, and the preliminary commissioning results will be presented in detail in this paper.

SU-E-T-149: Electron Beam Profile Differences Between Elekta MLCi2 and Elekta Agility Treatment Heads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, C; Hatcher, C

2014-06-01

Purpose: To report and investigate observed differences in electron beam profiles at various energies/applicators between Elekta MLCi2 and Agility treatment head on Elekta Infinity LINAC Methods: When we upgraded from MLCi2 to Agility on one of our Elekta Infinity LINAC's, electron beam PDDs and profiles were acquired for comparison purpose. All clinical electron energies (6/9/12/15/12/18 MeV) and electron applicators (6/10/14/20/25 square) were included in measurement. PDDs were acquired at 100 SSD in water (PTW MP3 water tank) with a plane-parallel ion chamber (PTW Roos). X and Y Profiles were acquired using IC Profiler (Sun Nuclear Corp.) at 1cm and maximummore » PDD depths (water equivalent). Results: All PDD curves match very well between MLCi2 and Agility treatment head. However, some significant differences on electron profiles were found. On Agility, even after increasing the default auto-tracking offset values for backup diaphragms in Y and MLC in X by 2.8 cm (the maximum allowed change is 3.0 cm), electron profiles still have rounder shoulders comparing to corresponding MLCi2 profiles. This difference is significantly more pronounced at larger applicators (20 and 25 square), for all electron energies. Conclusion: The significant design change between MLCi2 and Agility beam limiting device seems to affect exit electron beam profiles. In IEC1217 X direction, the main change on Agility is the removal of the original MLCi2 X backup diaphragms and replacing it with MLC leaves; In Y direction, the main change is the radius and materials on Y backup diaphragms.« less

New Fusion Concept Using Coaxial Passing Through Each Other Self-focusing Colliding Beams (Invention)

NASA Astrophysics Data System (ADS)

Chikvashvili, Ioseb

2011-10-01

In proposed Concept it is offered to use two ion beams directed coaxially at the same direction but with different velocities (center-of-mass collision energy should be sufficient for fusion), to direct oppositely the relativistic electron beam for only partial compensation of positive space charge and for allowing the combined beam's pinch capability, to apply the longitudinal electric field for compensation of alignment of velocities of reacting particles and also for compensation of energy losses of electrons via Bremsstrahlung. On base of Concept different types of reactor designs can be realized: Linear and Cyclic designs. In the simplest embodiment the Cyclic Reactor (design) may include: betatron type device (circular store of externally injected particles - induction accelerator), pulse high-current relativistic electron injector, pulse high-current slower ion injector, pulse high-current faster ion injector and reaction products extractor. Using present day technologies and materials (or a reasonable extrapolation of those) it is possible to reach: for induction linear injectors (ions&electrons) - currents of thousands A, repeatability - up to 10Hz, the same for high-current betatrons (FFAG, Stellatron, etc.). And it is possible to build the fusion reactor using the proposed Method just today.

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

NASA Technical Reports Server (NTRS)

Uribe, Roberto M.; Filppi, Ed; Zhang, Shubo

2007-01-01

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Au particle formation on the electron beam induced membrane

NASA Astrophysics Data System (ADS)

Choi, Seong Soo; Park, Myoung Jin; Han, Chul Hee; Oh, Sae-Joong; Kim, Sung-In; Park, Nam Kyou; Park, Doo-Jae; Choi, Soo Bong; Kim, Yong-Sang

2017-02-01

Recently the single molecules such as protein and deoxyribonucleic acid (DNA) have been successfully characterized by using a portable solidstate nanopore (MinION) with an electrical detection technique. However, there have been several reports about the high error rates of the fabricated nanopore device, possibly due to an electrical double layer formed inside the pore channel. The current DNA sequencing technology utilized is based on the optical detection method. In order to utilize the current optical detection technique, we will present the formation of the Au nano-pore with Au particle under the various electron beam irradiations. In order to provide the diffusion of Au atoms, a 2 keV electron beam irradiation has been performed During electron beam irradiations by using field emission scanning electron microscopy (FESEM), Au and C atoms would diffuse together and form the binary mixture membrane. Initially, the Au atoms diffused in the membrane are smaller than 1 nm, below the detection limit of the transmission electron microscopy (TEM), so that we are unable to observe the Au atoms in the formed membrane. However, after several months later, the Au atoms became larger and larger with expense of the smaller particles: Ostwald ripening. Furthermore, we also observe the Au crystalline lattice structure on the binary Au-C membrane. The formed Au crystalline lattice structures were constantly changing during electron beam imaging process due to Spinodal decomposition; the unstable thermodynamic system of Au-C binary membrane. The fabricated Au nanopore with an Au nanoparticle can be utilized as a single molecule nanobio sensor.

High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube

NASA Technical Reports Server (NTRS)

Krawczyk, Richard; Wilson, Jeffrey; Simons, Rainee; Williams, Wallace; Bhasin, Kul; Robbins, Neal; Dibb, Daniel; Menninger, William; Zhai, Xiaoling; Benton, Robert;

High Current Density Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

Tube - device for generating high levels of RF power DARPA Defense Advanced Research Agency PBG Photonic band gap W- Band 75-111 GHz dB Decibels GHz...Extended interaction klystron 1. Introduction All RF vacuum electron sources require a high quality electron beam for efficient operation. Research on...with long life. Pres- ently, only thermionic dispenser cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a

Activating "Invisible" Glue: Using Electron Beam for Enhancement of Interfacial Properties of Graphene-Metal Contact.

PubMed

Kim, Songkil; Russell, Michael; Kulkarni, Dhaval D; Henry, Mathias; Kim, Steve; Naik, Rajesh R; Voevodin, Andrey A; Jang, Seung Soon; Tsukruk, Vladimir V; Fedorov, Andrei G

2016-01-26

Interfacial contact of two-dimensional graphene with three-dimensional metal electrodes is crucial to engineering high-performance graphene-based nanodevices with superior performance. Here, we report on the development of a rapid "nanowelding" method for enhancing properties of interface to graphene buried under metal electrodes using a focused electron beam induced deposition (FEBID). High energy electron irradiation activates two-dimensional graphene structure by generation of structural defects at the interface to metal contacts with subsequent strong bonding via FEBID of an atomically thin graphitic interlayer formed by low energy secondary electron-assisted dissociation of entrapped hydrocarbon contaminants. Comprehensive investigation is conducted to demonstrate formation of the FEBID graphitic interlayer and its impact on contact properties of graphene devices achieved via strong electromechanical coupling at graphene-metal interfaces. Reduction of the device electrical resistance by ∼50% at a Dirac point and by ∼30% at the gate voltage far from the Dirac point is obtained with concurrent improvement in thermomechanical reliability of the contact interface. Importantly, the process is rapid and has an excellent insertion potential into a conventional fabrication workflow of graphene-based nanodevices through single-step postprocessing modification of interfacial properties at the buried heterogeneous contact.

Searching for O-X-B mode-conversion window with monitoring of stray microwave radiation in LHD

NASA Astrophysics Data System (ADS)

Igami, H.; Kubo, S.; Laqua, H. P.; Nagasaki, K.; Inagaki, S.; Notake, T.; Shimozuma, T.; Yoshimura, Y.; Mutoh, T.; LHD Experimental Group

2006-10-01

In the Large Helical Device, the stray microwave radiation is monitored by using so-called sniffer probes during electron cyclotron heating. In monitoring the stray radiation, we changed the microwave beam injection angle and search the O-X-B mode-conversion window to excite electron Bernstein waves (EBWs). When the microwave beam is injected toward the vicinity of the predicted O-X-B mode-conversion window, the electron temperature rises in the central part of overdense plasmas. In that case, the stray radiation level near the injection antenna becomes low. These results indicate that monitoring the stray radiation near the injection antenna is helpful in confirming the effectiveness of excitation of EBWs simply without precise analysis.

Design and construction of a high-energy photon polarimeter

NASA Astrophysics Data System (ADS)

Dugger, M.; Ritchie, B. G.; Sparks, N.; Moriya, K.; Tucker, R. J.; Lee, R. J.; Thorpe, B. N.; Hodges, T.; Barbosa, F. J.; Sandoval, N.; Jones, R. T.

2017-09-01

We report on the design and construction of a high-energy photon polarimeter for measuring the degree of polarization of a linearly-polarized photon beam. The photon polarimeter uses the process of pair production on an atomic electron (triplet production). The azimuthal distribution of scattered atomic electrons following triplet production yields information regarding the degree of linear polarization of the incident photon beam. The polarimeter, operated in conjunction with a pair spectrometer, uses a silicon strip detector to measure the recoil electron distribution resulting from triplet photoproduction in a beryllium target foil. The analyzing power ΣA for the device using a 75 μm beryllium converter foil is about 0.2, with a relative systematic uncertainty in ΣA of 1.5%.

Visual Analysis of the Daily QA Results of Photon and Electron Beams of a Trilogy Linac over a Five-year Period

PubMed Central

Chan, Maria F.; Li, Qiongge; Tang, Xiaoli; Li, Xiang; Li, Jingdong; Tang, Grace; Hunt, Margie A.; Deasy, Joseph O.

2016-01-01

Data visualization technique was applied to analyze the daily QA results of photon and electron beams. Special attention was paid to any trend the beams might display. A Varian Trilogy Linac equipped with dual photon energies and five electron energies was commissioned in early 2010. Daily Linac QA tests including the output constancy, beam flatness and symmetry (radial and transverse directions) were performed with an ionization chamber array device (QA BeamChecker Plus, Standard Imaging). The data of five years were collected and analyzed. For each energy, the measured data were exported and processed for visual trending using an in-house Matlab program. These daily data were cross-correlated with the monthly QA and annual QA results, as well as the preventive maintenance records. Majority of the output were within 1% of variation, with a consistent positive/upward drift for all seven energies (~+0.25% per month). The baseline of daily device is reset annually right after the TG-51 calibration. This results in a sudden drop of the output. On the other hand, the large amount of data using the same baseline exhibits a sinusoidal behavior (cycle = 12 months; amplitude = 0.8%, 0.5% for photons, electrons, respectively) on symmetry and flatness when normalization of baselines is accounted for. The well known phenomenon of new Linac output drift was clearly displayed. This output drift was a result of the air leakage of the over-pressurized sealed monitor chambers for the specific vendor. Data visualization is a new trend in the era of big data in radiation oncology research. It allows the data to be displayed visually and therefore more intuitive. Based on the visual display from the past, the physicist might predict the trend of the Linac and take actions proactively. It also makes comparisons, alerts failures, and potentially identifies causalities. PMID:27547595

Spectroscopic determination of the composition of a 50 kV hydrogen diagnostic neutral beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, X.; Nornberg, M. D., E-mail: mdnornberg@wisc.edu; Den Hartog, D. J.

2016-11-15

A grating spectrometer with an electron multiplying charge-coupled device camera is used to diagnose a 50 kV, 5 A, 20 ms hydrogen diagnostic neutral beam. The ion source density is determined from Stark broadened H{sub β} emission and the spectrum of Doppler-shifted H{sub α} emission is used to quantify the fraction of ions at full, half, and one-third beam energy under a variety of operating conditions including fueling gas pressure and arc discharge current. Beam current is optimized at low-density conditions in the ion source while the energy fractions are found to be steady over most operating conditions.

Electronically-Controlled Beam-Steering through Vanadium Dioxide Metasurfaces

PubMed Central

Hashemi, Mohammed Reza M.; Yang, Shang-Hua; Wang, Tongyu; Sepúlveda, Nelson; Jarrahi, Mona

2016-01-01

Engineered metamaterials offer unique functionalities for manipulating the spectral and spatial properties of electromagnetic waves in unconventional ways. Here, we report a novel approach for making reconfigurable metasurfaces capable of deflecting electromagnetic waves in an electronically controllable fashion. This is accomplished by tilting the phase front of waves through a two-dimensional array of resonant metasurface unit-cells with electronically-controlled phase-change materials embedded inside. Such metasurfaces can be placed at the output facet of any electromagnetic radiation source to deflect electromagnetic waves at a desired frequency, ranging from millimeter-wave to far-infrared frequencies. Our design does not use any mechanical elements, external light sources, or reflectarrays, creating, for the first time, a highly robust and fully-integrated beam-steering device solution. We demonstrate a proof-of-concept beam-steering metasurface optimized for operation at 100 GHz, offering up to 44° beam deflection in both horizontal and vertical directions. Dynamic control of electromagnetic wave propagation direction through this unique platform could be transformative for various imaging, sensing, and communication applications, among others. PMID:27739471

I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

2016-09-01

Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

Engineering optical properties using plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Tamma, Venkata Ananth

Plasmonic nanostructures can be engineered to take on unusual optical properties not found in natural materials. The optical responses of plasmonic materials are functions of the structural parameters and symmetry of the nanostructures, material parameters of the nanostructure and its surroundings and the incidence angle, frequency and polarization state of light. The scattering and hence the visibility of an object could be reduced by coating it with a plasmonic material. In this thesis, presented is an optical frequency scattering cancelation device composed of a silicon nanorod coated by a plasmonic gold nanostructure. The principle of operation was theoretically analyzed using Mie theory and the device design was verified by extensive numerical simulations. The device was fabricated using a combination of nanofabrication techniques such as electron beam lithography and focused ion beam milling. The optical responses of the scattering cancelation device and a control sample of bare silicon rod were directly visualized using near-field microscopy coupled with heterodyne interferometric detection. The experimental results were analyzed and found to match very well with theoretical prediction from numerical simulations thereby validating the design principles and our implementation. Plasmonic nanostructures could be engineered to exhibit unique optical properties such as Fano resonance characterized by narrow asymmetrical lineshape. We present dynamic tuning and symmetry lowering of Fano resonances in plasmonic nanostructures fabricated on flexible substrates. The tuning of Fano resonance was achieved by application of uniaxial mechanical stress. The design of the nanostructures was facilitated by extensive numerical simulations and the symmetry lowering was analyzed using group theoretical methods. The nanostructures were fabricated using electron beam lithography and optically characterized for various mechanical stress. The experimental results were in good agreement with the numerical simulations. The mechanically tunable plasmonic nanostructure could serve as a platform for dynamically tunable nanophotonic devices such as sensors and tunable filters.

Electron beam emission from a diamond-amplifier cathode.

PubMed

Chang, Xiangyun; Wu, Qiong; Ben-Zvi, Ilan; Burrill, Andrew; Kewisch, Jorg; Rao, Triveni; Smedley, John; Wang, Erdong; Muller, Erik M; Busby, Richard; Dimitrov, Dimitre

2010-10-15

The diamond amplifier (DA) is a new device for generating high-current, high-brightness electron beams. Our transmission-mode tests show that, with single-crystal, high-purity diamonds, the peak current density is greater than 400  mA/mm², while its average density can be more than 100  mA/mm². The gain of the primary electrons easily exceeds 200, and is independent of their density within the practical range of DA applications. We observed the electron emission. The maximum emission gain measured was 40, and the bunch charge was 50  pC/0.5  mm². There was a 35% probability of the emission of an electron from the hydrogenated surface in our tests. We identified a mechanism of slow charging of the diamond due to thermal ionization of surface states that cancels the applied field within it. We also demonstrated that a hydrogenated diamond is extremely robust.

Interaction of an ultrarelativistic electron bunch train with a W-band accelerating structure: High power and high gradient

DOE PAGES

Wang, D.; Antipov, S.; Jing, C.; ...

2016-02-05

Electron beam interaction with high frequency structures (beyond microwave regime) has a great impact on future high energy frontier machines. We report on the generation of multimegawatt pulsed rf power at 91 GHz in a planar metallic accelerating structure driven by an ultrarelativistic electron bunch train. This slow-wave wakefield device can also be used for high gradient acceleration of electrons with a stable rf phase and amplitude which are controlled by manipulation of the bunch train. To achieve precise control of the rf pulse properties, a two-beam wakefield interferometry method was developed in which the rf pulse, due to themore » interference of the wakefields from the two bunches, was measured as a function of bunch separation. As a result, measurements of the energy change of a trailing electron bunch as a function of the bunch separation confirmed the interferometry method.« less

Storage Reliability of Missile Materiel Program. Storage Reliability Analysis Summary Report. Volume 1. Electrical and Electronic Devices

DTIC Science & Technology

1976-05-01

since the platinum silicide and titanium metals also offer very low mobility to the alkaline ions, the BLSJ . is inert to sodium . Inversion and...gettering agents for sodium ions, thus making the cont&-nination far less mobile. The stability of the structural and electrical properties of the oxide...to be an effective barrier to sodium migration. In Beam Lead Sealed ,unction (BLSJ) devices, the silicon nitride seals the devices from sodium and

High resolution in-operando microimaging of solar cells with pulsed electrically-detected magnetic resonance

NASA Astrophysics Data System (ADS)

Katz, Itai; Fehr, Matthias; Schnegg, Alexander; Lips, Klaus; Blank, Aharon

2015-02-01

The in-operando detection and high resolution spatial imaging of paramagnetic defects, impurities, and states becomes increasingly important for understanding loss mechanisms in solid-state electronic devices. Electron spin resonance (ESR), commonly employed for observing these species, cannot meet this challenge since it suffers from limited sensitivity and spatial resolution. An alternative and much more sensitive method, called electrically-detected magnetic resonance (EDMR), detects the species through their magnetic fingerprint, which can be traced in the device's electrical current. However, until now it could not obtain high resolution images in operating electronic devices. In this work, the first spatially-resolved electrically-detected magnetic resonance images (EDMRI) of paramagnetic states in an operating real-world electronic device are provided. The presented method is based on a novel microwave pulse sequence allowing for the coherent electrical detection of spin echoes in combination with powerful pulsed magnetic-field gradients. The applicability of the method is demonstrated on a device-grade 1-μm-thick amorphous silicon (a-Si:H) solar cell and an identical device that was degraded locally by an electron beam. The degraded areas with increased concentrations of paramagnetic defects lead to a local increase in recombination that is mapped by EDMRI with ∼20-μm-scale pixel resolution. The novel approach presented here can be widely used in the nondestructive in-operando three-dimensional characterization of solid-state electronic devices with a resolution potential of less than 100 nm.

Electron-beam-induced information storage in hydrogenated amorphous silicon devices

DOEpatents

Yacobi, B.G.

1985-03-18

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahul, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Vishwakarma, S. R., E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Verma, Aneet Kumar, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com

2011-10-20

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2

Design of robust microlinacs for wide replacement of radioisotope sources

NASA Astrophysics Data System (ADS)

Smirnov, A. V.; Agustsson, R. A.; Boucher, S.; Harrison, M.; Junge, K.; Savin, E.; Smirnov, A. Yu

2017-12-01

To improve public security and prevent the diversion of radioactive material for Radiation Dispersion Devices, development of an inexpensive, portable, easy-to-manufacture linac system is very important. The bremsstrahlung X-rays produced by relativistic electron beam on a high-Z converter can mimic X-rays radiated from various radioactive sources. Here we consider development of two designs: one matching a Ir-192 source used in radiography with ∼1-1.3 MeV electrons, and another one Cs137 source using 3.5-4 MeV electrons that can be considered for borehole logging. Both designs use standing wave, high group velocity, cm- wave, accelerating structure. The logging tool conceptual design is based on KlyLac concept combining a klystron and linac operating in self-oscillating mode and sharing the same vacuum envelop, and electron beam.

Modeling of electron-specimen interaction in scanning electron microscope for e-beam metrology and inspection: challenges and perspectives

NASA Astrophysics Data System (ADS)

Suzuki, Makoto; Kameda, Toshimasa; Doi, Ayumi; Borisov, Sergey; Babin, Sergey

2018-03-01

The interpretation of scanning electron microscopy (SEM) images of the latest semiconductor devices is not intuitive and requires comparison with computed images based on theoretical modeling and simulations. For quantitative image prediction and geometrical reconstruction of the specimen structure, the accuracy of the physical model is essential. In this paper, we review the current models of electron-solid interaction and discuss their accuracy. We perform the comparison of the simulated results with our experiments of SEM overlay of under-layer, grain imaging of copper interconnect, and hole bottom visualization by angular selective detectors, and show that our model well reproduces the experimental results. Remaining issues for quantitative simulation are also discussed, including the accuracy of the charge dynamics, treatment of beam skirt, and explosive increase in computing time.

Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

2014-10-01

The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

Demonstration of lithography patterns using reflective e-beam direct write

NASA Astrophysics Data System (ADS)

Freed, Regina; Sun, Jeff; Brodie, Alan; Petric, Paul; McCord, Mark; Ronse, Kurt; Haspeslagh, Luc; Vereecke, Bart

2011-04-01

Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

Electron-beam-ion-source (EBIS) modeling progress at FAR-TECH, Inc

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, J. S., E-mail: kim@far-tech.com; Zhao, L., E-mail: kim@far-tech.com; Spencer, J. A., E-mail: kim@far-tech.com

FAR-TECH, Inc. has been developing a numerical modeling tool for Electron-Beam-Ion-Sources (EBISs). The tool consists of two codes. One is the Particle-Beam-Gun-Simulation (PBGUNS) code to simulate a steady state electron beam and the other is the EBIS-Particle-In-Cell (EBIS-PIC) code to simulate ion charge breeding with the electron beam. PBGUNS, a 2D (r,z) electron gun and ion source simulation code, has been extended for efficient modeling of EBISs and the work was presented previously. EBIS-PIC is a space charge self-consistent PIC code and is written to simulate charge breeding in an axisymmetric 2D (r,z) device allowing for full three-dimensional ion dynamics.more » This 2D code has been successfully benchmarked with Test-EBIS measurements at Brookhaven National Laboratory. For long timescale (< tens of ms) ion charge breeding, the 2D EBIS-PIC simulations take a long computational time making the simulation less practical. Most of the EBIS charge breeding, however, may be modeled in 1D (r) as the axial dependence of the ion dynamics may be ignored in the trap. Where 1D approximations are valid, simulations of charge breeding in an EBIS over long time scales become possible, using EBIS-PIC together with PBGUNS. Initial 1D results are presented. The significance of the magnetic field to ion dynamics, ion cooling effects due to collisions with neutral gas, and the role of Coulomb collisions are presented.« less

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

NASA Technical Reports Server (NTRS)

Wincheski, Buzz; Namkung, Min; Smits, Jan; Williams, Phillip; Harvey, Robert

2003-01-01

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Wire position system to consistently measure and record the location change of girders following ground changes

NASA Astrophysics Data System (ADS)

Choi, H. J.; Lee, S. B.; Lee, H. G.; Y Back, S.; Kim, S. H.; Kang, H. S.

2017-07-01

Several parts that comprise the large scientific device should be installed and operated at the accurate three-dimensional location coordinates (X, Y, and Z) where they should be subjected to survey and alignment. The location of the aligned parts should not be changed in order to ensure that the electron beam parameters (Energy 10 GeV, Charge 200 pC, and Bunch Length 60 fs, Emittance X/Y 0.481 μm/0.256 μm) of PAL-XFEL (X-ray Free Electron Laser of the Pohang Accelerator Laboratory) remain stable and can be operated without any problems. As time goes by, however, the ground goes through uplift and subsidence, which consequently deforms building floors. The deformation of the ground and buildings changes the location of several devices including magnets and RF accelerator tubes, which eventually leads to alignment errors (∆X, ∆Y, and ∆Z). Once alignment errors occur with regard to these parts, the electron beam deviates from its course and beam parameters change accordingly. PAL-XFEL has installed the Hydrostatic Leveling System (HLS) to measure and record the vertical change of buildings and ground consistently and systematically and the Wire Position System (WPS) to measure the two dimensional changes of girders. This paper is designed to introduce the operating principle and design concept of WPS and discuss the current situation regarding installation and operation.

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1986-01-01

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

2017-12-01

We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

LETTER TO THE EDITOR: Comments on 'The influence of a novel transmission detector on 6 MV x-ray beam characteristics'

NASA Astrophysics Data System (ADS)

Harder, Dietrich

2010-02-01

In their recent paper (Venkataraman et al 2009 Phys. Med. Biol. 54 3173-83) the authors reported on photon beam attenuation and secondary electron production in the novel transmission detector COMPASS, to be placed in the accessory holder of the linac treatment head. In the interest of IMRT patient safety, space-resolved measurements by transmission detectors analysing the MLC-shaped photon fluence pattern in real time are in fact an urgent item for equipment designers. However, there are some constraints for the construction of such devices. The COMPASS system, at its present stage of development, has difficulties in complying with the constraints that the spatial sampling rate should fit the desired task and that the enhanced secondary electron contamination of the photon beam due to the presence of the device should be minimized. The authors also missed to mention a forerunner in this field, the DAVID transmission detector (Poppe et al 2006 Phys. Med. Biol. 51 1237-48), serving for the real-time supervision of the MLC aperture during patient treatment and ever since proven in clinical practice. The DAVID system, a transparent multiwire ionization chamber placed in the accessory holder, will be shortly described.

Brazing copper to dispersion-strengthened copper

NASA Astrophysics Data System (ADS)

Ryding, David G.; Allen, Douglas; Lee, Richard H.

1996-11-01

The advanced photon source is a state-of-the-art synchrotron light source that will produce intense x-ray beams, which will allow the study of smaller samples and faster reactions and processes at a greater level of detail than has ben possible to date. The beam is produced by using third- generation insertion devices in a 7-GeV electron/positron storage ring that is 1,104 meters in circumference. The heat load from these intense high-power devices is very high, and certain components must sustain total heat loads of 3 to 15 kW and heat fluxes of 30 W/mm$_2). Because the beams will cycle on and off many times, thermal shock and fatigue will be a problem. High heat flux impinging on a small area causes a large thermal gradient that results in high stress. GlidCop, a dispersion-strengthened copper, is the desired design material because of its high thermal conductivity and superior mechanical properties as compared to copper and its alloys. GlidCop is not amenable to joining by fusion welding, and brazing requires diligence because of high diffusivity. Brazing procedures were developed using optical and scanning electron microscopy.

Methods and devices based on brillouin selective sideband amplification

NASA Technical Reports Server (NTRS)

Yao, X. Steve (Inventor)

2003-01-01

Opto-electronic devices and techniques using Brillouin scattering to select a sideband in a modulated optical carrier signal for amplification. Two lasers respectively provide a carrier signal beam and a Brillouin pump beam which are fed into an Brillouin optical medium in opposite directions. The relative frequency separation between the lasers is adjusted to align the frequency of the backscattered Brillouin signal with a desired sideband in the carrier signal to effect a Brillouin gain on the sideband. This effect can be used to implement photonic RF signal mixing and conversion with gain, conversion from phase modulation to amplitude modulation, photonic RF frequency multiplication, optical and RF pulse generation and manipulation, and frequency-locking of lasers.

Design and construction of a Faraday cup for measurement of small electronic currents

NASA Technical Reports Server (NTRS)

Veyssiere, A.

1985-01-01

The design of a device to measure and integrate very small currents generated by the impact of a charged particle beam upon a Faraday cut is described. The main component is a graphite block capable of stopping practically all the incident changes. The associated electronic apparatus required to measure better than 10/13 ampere with a precision of 10/0 is described.

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

2018-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

Beam and spin dynamics in the fast ramping storage ring ELSA: Concepts and measures to increase beam energy, current and polarization

NASA Astrophysics Data System (ADS)

Hillert, Wolfgang; Balling, Andreas; Boldt, Oliver; Dieckmann, Andreas; Eberhardt, Maren; Frommberger, Frank; Heiliger, Dominik; Heurich, Nikolas; Koop, Rebecca; Klarner, Fabian; Preisner, Oliver; Proft, Dennis; Pusch, Thorsten; Roth, André; Sauerland, Dennis; Schedler, Manuel; Schmidt, Jan Felix; Switka, Michael; Thiry, Jens-Peter; Wittschen, Jürgen; Zander, Sven

2017-01-01

The electron accelerator facility ELSA has been operated for almost 30 years serving nuclear physics experiments investigating the sub-nuclear structure of matter. Within the 12 years funding period of the collaborative research center SFB/TR 16, linearly and circularly polarized photon beams with energies up to more than 3 GeV were successfully delivered to photoproduction experiments. In order to fulfill the increasing demands on beam polarization and intensity, a comprehensive research and upgrade program has been carried out. Beam and spin dynamics have been studied theoretically and experimentally, and sophisticated new devices have been developed and installed. The improvements led to a significant increase of the available beam polarization and intensity. A further increase of beam energy seems feasible with the implementation of superconducting cavities.

Structural and optical properties of electron-beam-evaporated ZnSe 1- x Te x Ternary compounds with various Te contents

NASA Astrophysics Data System (ADS)

Suthagar, J.; Suthan Kissinger, N. J.; Sharli Nath, G. M.; Perumal, K.

2014-01-01

ZnSe1- x Te x films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe1- x Te x films were studied in the present work. The host material ZnSe1- x Te x , were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10-5 mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E g ) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x.

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

NASA Astrophysics Data System (ADS)

Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

1999-06-01

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

Electron-beam induced damage in thin insulating films on compound semiconductors. M.S. Thesis, 1988

NASA Technical Reports Server (NTRS)

Pantic, Dragan M.

1989-01-01

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

A positron remoderator for the high intensity positron source NEPOMUC

NASA Astrophysics Data System (ADS)

Piochacz, Christian; Kögel, Gottfried; Egger, Werner; Hugenschmidt, Christoph; Mayer, Jakob; Schreckenbach, Klaus; Sperr, Peter; Stadlbauer, Martin; Dollinger, Günther

2008-10-01

A remoderator for the high intensity positron source NEPOMUC was developed and installed at the beam facility. A beam of remoderated positrons could be produced with different energies and a diameter of less than 2 mm was obtained. The efficiency of the remoderation setup was determined to be 5%. Due to the brilliance of the remoderated beam, the measurements at the coincidence Doppler broadening spectrometer (CDBS) and at the positron annihilation induced Auger electron spectrometer (PAES) could be improved. The setup and functionality of the remoderation device is presented as well as the first measurements at the remoderator, CDBS and PAES.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, E.I. Jr.

1996-06-04

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, Jr., Edward I.

1996-01-01

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Radiation Production by Charged Particle Beams Ejected from a Plasma Focus.

DTIC Science & Technology

1981-02-01

The scope of this investigation concerns the development of a pulsed radiation source using the charged particle beam ejected from a plasma focus device...satellite components for radiation hardening and survivability. The plasma focus is operated in a modified geometry such that electron bursts which...a radiation facility. The plasma focus , identified as the Mark IV, is nominally rated at 34 kJ with a capacitance of 168 micro F at 20 kV. The

Carbon nanotube collimator fabrication and application

DOEpatents

Chow, Lee; Chai, Guangyu; Schenkel, Thomas

2010-07-06

Apparatus, methods, systems and devices for fabricating individual CNT collimators. Micron size fiber coated CNT samples are synthesized with chemical vapor deposition method and then the individual CNT collimators are fabricated with focused ion beam technique. Unfocused electron beams are successfully propagated through the CNT collimators. The CNT nano-collimators are used for applications including single ion implantation and in high-energy physics, and allow rapid, reliable testing of the transmission of CNT arrays for transport of molecules.

CHARGING OF DEVICES BY MICROWAVE POWER BEAMING

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2005-01-01

A system for providing wireless, charging power and/or primary power to electronic/electrical devices is described whereby microwave energy is employed. Microwave energy is focused by a power transmitter comprising one or more adaptively-phased microwave array emitters onto a device to be charged. Rectennas within the device to be charged receive and rectify the microwave energy and use it for battery charging and/or for primary power. A locator signal generated by the device to be charged is analyzed by the system to determine the location of the device to be charged relative to the microwave array emitters, permitting thc microwave energy to be directly specifically towards the device to be charged. Backscatter detectors respond to backscatter energy reflected off of any obstacle between the device to be charged and the microwave array emitters. Power to any obstructed microwave array emitter is reduced until the obstruction is removed. Optionally, data can be modulated onto microwave energy beams produced by the array emitter and demodulated by the device, thereby providing means of data communication from the power transmitter to the device. Similarly, data can be modulated onto the locator signal and demodulated in the power transmitter, thereby providing means of data communication from the device to the power transmitter.

Uses of megavoltage digital tomosynthesis in radiotherapy

NASA Astrophysics Data System (ADS)

Sarkar, Vikren

With the advent of intensity modulated radiotherapy, radiation treatment plans are becoming more conformal to the tumor with the decreasing margins. It is therefore of prime importance that the patient be positioned correctly prior to treatment. Therefore, image guided treatment is necessary for intensity modulated radiotherapy plans to be implemented successfully. Current advanced imaging devices require costly hardware and software upgrade, and radiation imaging solutions, such as cone beam computed tomography, may introduce extra radiation dose to the patient in order to acquire better quality images. Thus, there is a need to extend current existing imaging device ability and functions while reducing cost and radiation dose. Existing electronic portal imaging devices can be used to generate computed tomography-like tomograms through projection images acquired over a small angle using the technique of cone-beam digital tomosynthesis. Since it uses a fraction of the images required for computed tomography reconstruction, use of this technique correspondingly delivers only a fraction of the imaging dose to the patient. Furthermore, cone-beam digital tomosynthesis can be offered as a software-only solution as long as a portal imaging device is available. In this study, the feasibility of performing digital tomosynthesis using individually-acquired megavoltage images from a charge coupled device-based electronic portal imaging device was investigated. Three digital tomosynthesis reconstruction algorithms, the shift-and-add, filtered back-projection, and simultaneous algebraic reconstruction technique, were compared considering the final image quality and radiation dose during imaging. A software platform, DART, was created using a combination of the Matlab and C++ languages. The platform allows for the registration of a reference Cone Beam Digital Tomosynthesis (CBDT) image against a daily acquired set to determine how to shift the patient prior to treatment. Finally, the software was extended to investigate if the digital tomosynthesis dataset could be used in an adaptive radiotherapy regimen through the use of the Pinnacle treatment planning software to recalculate dose delivered. The feasibility study showed that the megavoltage CBDT visually agreed with corresponding megavoltage computed tomography images. The comparative study showed that the best compromise between imaging quality and imaging dose is obtained when 11 projection images, acquired over an imaging angle of 40°, are used with the filtered back-projection algorithm. DART was successfully used to register reference and daily image sets to within 1 mm in-plane and 2.5 mm out of plane. The DART platform was also effectively used to generate updated files that the Pinnacle treatment planning system used to calculate updated dose in a rigidly shifted patient. These doses were then used to calculate a cumulative dose distribution that could be used by a physician as reference to decide when the treatment plan should be updated. In conclusion, this study showed that a software solution is possible to extend existing electronic portal imaging devices to function as cone-beam digital tomosynthesis devices and achieve daily requirement for image guided intensity modulated radiotherapy treatments. The DART platform also has the potential to be used as a part of adaptive radiotherapy solution.

Plasma physics and related challenges of millimeter-wave-to-terahertz and high power microwave generationa)

NASA Astrophysics Data System (ADS)

Booske, John H.

2008-05-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave (mmw) to terahertz (THz) regime electromagnetic radiation, from 0.1 to 10THz. While vacuum electronic sources are a natural choice for high power, the challenges have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, high resolution radar, next generation acceleration drivers, and analysis of fluids and condensed matter. The compact size requirements for many of these high frequency sources require miniscule, microfabricated slow wave circuits. This necessitates electron beams with tiny transverse dimensions and potentially very high current densities for adequate gain. Thus, an emerging family of microfabricated, vacuum electronic devices share many of the same plasma physics challenges that are currently confronting "classic" high power microwave (HPM) generators including long-life bright electron beam sources, intense beam transport, parasitic mode excitation, energetic electron interaction with surfaces, and rf air breakdown at output windows. The contemporary plasma physics and other related issues of compact, high power mmw-to-THz sources are compared and contrasted to those of HPM generation, and future research challenges and opportunities are discussed.

Promotion of acceptor formation in SnO2 nanowires by e-beam bombardment and impacts to sensor application

PubMed Central

Sub Kim, Sang; Gil Na, Han; Woo Kim, Hyoun; Kulish, Vadym; Wu, Ping

2015-01-01

We have realized a p-type-like conduction in initially n-type SnO2 nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO2 nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of 50 and 150 kGy, and were then used to fabricate NO2 gas sensors, which exhibited n-type and p-type conductivities, respectively. The tuneability of the conduction behavior is assumed to be governed by the formation of tin vacancies (under high-energy electron beam irradiation), because it is the only possible acceptor, excluding all possible defects via density functional theory (DFT) calculations. The effect of external electric fields on the defect stability was studied using DFT calculations. The measured NO2 sensing dynamics, including response and recovery times, were well represented by the electron-hole compensation mechanism from standard electron-hole gas equilibrium statistics. This study elucidates the charge-transport characteristics of bipolar semiconductors that underlie surface chemical reactions. The principles derived will guide the development of future SnO2-based electronic and electrochemical devices. PMID:26030815

Adjustment of multi-CCD-chip-color-camera heads

NASA Astrophysics Data System (ADS)

Guyenot, Volker; Tittelbach, Guenther; Palme, Martin

1999-09-01

The principle of beam-splitter-multi-chip cameras consists in splitting an image into differential multiple images of different spectral ranges and in distributing these onto separate black and white CCD-sensors. The resulting electrical signals from the chips are recombined to produce a high quality color picture on the monitor. Because this principle guarantees higher resolution and sensitivity in comparison to conventional single-chip camera heads, the greater effort is acceptable. Furthermore, multi-chip cameras obtain the compete spectral information for each individual object point while single-chip system must rely on interpolation. In a joint project, Fraunhofer IOF and STRACON GmbH and in future COBRA electronic GmbH develop methods for designing the optics and dichroitic mirror system of such prism color beam splitter devices. Additionally, techniques and equipment for the alignment and assembly of color beam splitter-multi-CCD-devices on the basis of gluing with UV-curable adhesives have been developed, too.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

DOEpatents

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Preliminary Mechanical Design Study of the Hollow Electron Lens for HL-LHC

NASA Astrophysics Data System (ADS)

Zanoni, Carlo; Gobbi, Giorgia; Perini, Diego; Stancari, Giulio

2017-07-01

A Hollow Electron Lens (HEL) has been proposed in order to improve performance of halo control and collimation in the Large Hadron Collider in view of its High Luminosity upgrade (HL-LHC). The concept is based on a hollow beam of electrons that travels around the protons for a few meters. The electron beam is produced by a cathode and then guided by a strong magnetic field. The first step of the design is the definition of the magnetic field that drives the electron trajectories. The estimation of such trajectories by means of a dedicated MATLAB tool is presented. The influence of the main geometrical and electrical parameters is analyzed and discussed. Then, the main mechanical design choices for the solenoids, cryostats gun and collector are described. The aim of this paper is to provide an overview of the feasibility study of the Electron Lens for LHC. The methods used in this study also serve as examples for future mechanical and integration designs of similar devices.

Preliminary Mechanical Design Study of the Hollow Electron Lens for HL-LHC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zanoni, Carlo; Gobbi, Giorgia; Perini, Diego

A Hollow Electron Lens (HEL) has been proposed in order to improve performance of halo control and collimation in the Large Hadron Collider in view of its High Luminosity upgrade (HL-LHC). The concept is based on a hollow beam of electrons that travels around the protons for a few meters. The electron beam is produced by a cathode and then guided by a strong magnetic field. The first step of the design is the definition of the magnetic field that drives the electron trajectories. The estimation of such trajectories by means of a dedicated MATLAB tool is presented. The influencemore » of the main geometrical and electrical parameters is analyzed and discussed. Then, the main mechanical design choices for the solenoids, cryostats gun and collector are described. The aim of this paper is to provide an overview of the feasibility study of the Electron Lens for LHC. The methods used in this study also serve as examples for future mechanical and integration designs of similar devices.« less

Novel bismuth tri-iodide nanostructures obtained by the hydrothermal method and electron beam irradiation

NASA Astrophysics Data System (ADS)

Aguiar, Ivana; Olivera, Alvaro; Mombrú, Maia; Bentos Pereira, Heinkel; Fornaro, Laura

2017-01-01

Bismuth tri-iodide is a layered compound semiconductor which has suitable properties as material for ionizing radiation detection devices. Monocrystals and polycrystalline thin films have been studied for this application, but only recently, the development of nanostructures of this compound has emerged as an interesting alternative for using such nanostructures in new types of radiation detectors or for including them in other applications. Considering this, we present in this work BiI3 nanoparticles successfully synthesized by the hydrothermal method, using a Teflon-lined stainless steel autoclave, at a temperature of 180 °C during 8-20 h, with BiCl3 and NaI as source materials. We characterized the nanoparticles by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron dispersive spectroscopy (EDS). We obtained small rounded or hexagonal particles (10-20 nm in size) and larger structures. The maximum orientation of the nanostructures is along the (0 0 l) family planes and occurs after 16 h of synthesis, which arises as the best condition for obtaining BiI3 oriented nanostructures. When a 100 kV TEM electron beam was converged on the larger structures, we obtained highly oriented BiI3 hexagonal and rod shaped nanostructures. We found that particles' shape does not depend on the synthesis time. In addition, results were compared with the ones obtained for nanoparticles synthesized from solution. The present work is an advance in the synthesis of BiI3 nanostructures by the hydrothermal method, and is also the first step on seeking the amenable control of morphology and size of such structures using electron beam irradiation. This last process may be particularly appropriate for producing nanostructures for future applications in new devices.

Detecting Submicron Pattern Defects On Optical Photomasks Using An Enhanced El-3 Electron-Beam Lithography Tool

NASA Astrophysics Data System (ADS)

Simpson, R. A.; Davis, D. E.

1982-09-01

This paper describes techniques to detect submicron pattern defects on optical photomasks with an enhanced direct-write, electron-beam lithographic tool. EL-3 is a third generation, shaped spot, electron-beam lithography tool developed by IBM to fabricate semiconductor devices and masks. This tool is being upgraded to provide 100% inspection of optical photomasks for submicron pattern defects, which are subsequently repaired. Fixed-size overlapped spots are stepped over the mask patterns while a signal derived from the back-scattered electrons is monitored to detect pattern defects. Inspection does not require pattern recognition because the inspection scan patterns are derived from the original design data. The inspection spot is square and larger than the minimum defect to be detected, to improve throughput. A new registration technique provides the beam-to-pattern overlay required to locate submicron defects. The 'guard banding" of inspection shapes prevents mask and system tolerances from producing false alarms that would occur should the spots be mispositioned such that they only partially covered a shape being inspected. A rescanning technique eliminates noise-related false alarms and significantly improves throughput. Data is accumulated during inspection and processed offline, as required for defect repair. EL-3 will detect 0.5 um pattern defects at throughputs compatible with mask manufacturing.

Development of an amorphous selenium based photoconductor and its application in a high-sensitivity photodetector (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Ebisudani, Taishi; Ochiai, Jun; Saito, Ichitaro; Yamada, Takatoshi; Chua, Daniel H. C.; Mimura, Hidenori; Okano, Ken

2016-09-01

Although present imaging devices are mostly silicon-based devices such as CMOS and CCD, these devices are reaching their sensitivity limit due to the band gap of silicon. Amorphous selenium (a-Se) is a promising candidate for high- sensitivity photo imaging devices, because of its low thermal noise, high spatial resolution, as well as adaptability to wide-area deposition. In addition, internal signal amplification is reported on a-Se based photodetectors, which enables a photodetector having effective quantum efficiency over 100 % against visible light. Since a-Se has sensitivity to UV and soft X-rays, the reported internal signal amplification should be applicable to UV and X-ray detection. However, application of the internal signal amplification required high voltage, which caused unexpected breakdown at the contact or thin-film transistor-based signal read-out. For this reason, vacuum devices having electron-beam read-out is proposed. The advantages of vacuum-type devices are vacuum insulation and its extremely low dark current. In this study, we present recent progresses in developing a-Se based photoconductive films and photodetector using nitrogen-doped diamond electron beam source as signal read-out. A novel electrochemical method is used to dope impurities into a-Se, turning the material from weak p-type to n-type. A p-n junction is formed within a-Se photoconductive film, which has increased the sensitivity of a-Se based photodetector. Our result suggests a possibility of high sensitivity photodetector that can potentially break the limit of silicon-based devices.

Fiber optic temperature sensor gives rise to thermal analysis in complex product design

NASA Astrophysics Data System (ADS)

Cheng, Andrew Y. S.; Pau, Michael C. Y.

1996-09-01

A computer-adapted fiber-optic temperature sensing system has been developed which aims to study both the theoretical aspect of fiber temperature sensing and the experimental aspect of such system. The system consists of a laser source, a fiber sensing element, an electronic fringes counting device, and an on-line personal computer. The temperature measurement is achieved by the conventional double beam fringe counting method with optical path length changes in the sensing beam due to the fiber expansion. The system can automatically measure the temperature changes in a sensing fiber arm which provides an insight of the heat generation and dissipation of the measured system. Unlike the conventional measuring devices such as thermocouples or solid state temperature sensors, the fiber sensor can easily be wrapped and shaped to fit the surface of the measuring object or even inside a molded plastic parts such as a computer case, which gives much more flexibility and applicability to the analysis of heat generation and dissipation in the operation of these machine parts. The reference beam is being set up on a temperature controlled optical bench to facilitate high sensitivity and high temperature resolution. The measuring beam has a motorized beam selection device for multiple fiber beam measurement. The project has been demonstrated in the laboratory and the system sensitivity and resolution are found to be as high as 0.01 degree Celsius. It is expected the system will find its application in many design studies which require thermal budgeting.

Vertical beam size measurement in the CESR-TA e+e- storage ring using x-rays from synchrotron radiation

NASA Astrophysics Data System (ADS)

Alexander, J. P.; Chatterjee, A.; Conolly, C.; Edwards, E.; Ehrlichman, M. P.; Fontes, E.; Heltsley, B. K.; Hopkins, W.; Lyndaker, A.; Peterson, D. P.; Rider, N. T.; Rubin, D. L.; Savino, J.; Seeley, R.; Shanks, J.; Flanagan, J. W.

2014-06-01

We describe the construction and operation of an X-ray beam size monitor (xBSM), a device measuring e+ and e- beam sizes in the CESR-TA storage ring using synchrotron radiation. The device can measure vertical beam sizes of 10-100μm on a turn-by-turn, bunch-by-bunch basis at e± beam energies of ~2GeV. At such beam energies the xBSM images X-rays of ɛ≈1-10keV (λ≈0.1-1nm) that emerge from a hard-bend magnet through a single- or multiple-slit (coded aperture) optical element onto an array of 32 InGaAs photodiodes with 50μm pitch. Beamlines and detectors are entirely in-vacuum, enabling single-shot beam size measurement down to below 0.1 mA (2.5×109 particles) per bunch and inter-bunch spacing of as little as 4 ns. At Eb=2.1GeV, systematic precision of ~1μm is achieved for a beam size of ~12μm; this is expected to scale as ∝1/σb and ∝1/Eb. Achieving this precision requires comprehensive alignment and calibration of the detector, optical elements, and X-ray beam. Data from the xBSM have been used to extract characteristics of beam oscillations on long and short timescales, and to make detailed studies of low-emittance tuning, intra-beam scattering, electron cloud effects, and multi-bunch instabilities.

Beam shaping to provide round and square-shaped beams in optical systems of high-power lasers

NASA Astrophysics Data System (ADS)

Laskin, Alexander; Laskin, Vadim

2016-05-01

Optical systems of modern high-power lasers require control of irradiance distribution: round or square-shaped flat-top or super-Gaussian irradiance profiles are optimum for amplification in MOPA lasers and for thermal load management while pumping of crystals of solid-state ultra-short pulse lasers to control heat and minimize its impact on the laser power and beam quality while maximizing overall laser efficiency, variable profiles are also important in irradiating of photocathode of Free Electron lasers (FEL). It is suggested to solve the task of irradiance re-distribution using field mapping refractive beam shapers like piShaper. The operational principle of these devices presumes transformation of laser beam intensity from Gaussian to flat-top one with high flatness of output wavefront, saving of beam consistency, providing collimated output beam of low divergence, high transmittance, extended depth of field, negligible residual wave aberration, and achromatic design provides capability to work with ultra-short pulse lasers having broad spectrum. Using the same piShaper device it is possible to realize beams with flat-top, inverse Gauss or super Gauss irradiance distribution by simple variation of input beam diameter, and the beam shape can be round or square with soft edges. This paper will describe some design basics of refractive beam shapers of the field mapping type and optical layouts of their applying in optical systems of high-power lasers. Examples of real implementations and experimental results will be presented as well.

Production of Solar Cells in Space from Non Specific Ores by Utilization of Electronically Enhanced Sputtering

NASA Technical Reports Server (NTRS)

Curreri, Peter A.

2009-01-01

An ideal method of construction in space would utilize some form of the Universal Differentiator and Universal Constructor as described by Von Neumann (1). The Universal Differentiator is an idealized non ore specific extractive device which is capable of breaking any ore into its constituent elements, and the Universal Constructor can utilize these elements to build any device with controllability to the nanometer scale. During the Human Exploration Initiative program in the early 1990s a conceptual study was done (2) to understand whether such devices were feasible with near term technology for the utilization of space resources and energy. A candidate system was proposed which would utilize electronically enhanced sputtering as the differentiator. Highly ionized ions would be accelerated to a kinetic energy at which the interaction between them and the lattice elections in the ore would be at a maximum. Experiments have shown that the maximum disintegration of raw material occurs at an ion kinetic energy of about 5 MeV, regardless of the composition and structure of the raw material. Devices that could produce charged ion beams in this energy range in space were being tested in the early 1990s. At this energy, for example an ion in a beam of fluorine ions yields about 8 uranium ions from uranium fluoride, 1,400 hydrogen and oxygen atoms from ice, or 7,000 atoms from sulfur dioxide ice. The ions from the disintegrated ore would then be driven by an electrical field into a discriminator in the form of a mass spectrometer, where the magnetic field would divert the ions into collectors for future use or used directly in molecular beam construction techniques. The process would require 10-7 Torr vacuum which would be available in space or on the moon. If the process were used to make thin film silicon solar cells (ignoring any energy inefficiency for beam production), then energy break even for solar cells in space would occur after 14 days.

Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams

DOE PAGES

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; ...

2016-08-02

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less

Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less

Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams

NASA Astrophysics Data System (ADS)

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; Stanford, Michael G.; Lin, Ming-Wei; Li, Xufan; Mahjouri-Samani, Masoud; Jesse, Stephen; Sumpter, Bobby G.; Kalinin, Sergei V.; Joy, David C.; Xiao, Kai; Belianinov, Alex; Ovchinnikova, Olga S.

2016-08-01

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction the of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally, and decipher associated mechanisms at the atomic level. We demonstrate He+ beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and increases the Young’s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at the room temperature. The approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.

A liquid-He cryostat for structural and thermal disorder studies by X-ray absorption.

PubMed

Bouamrane, F; Ribbens, M; Fonda, E; Adjouri, C; Traverse, A

2003-07-01

A new device operating from 4.2 to 300 K is now installed on the hard X-ray station of the DCI ring in LURE in order to measure absorption coefficients. This liquid-He bath device has three optical windows. One allows the incident beam to impinge on the sample, one located at 180 degrees with respect to the sample allows transmitted beams to be detected, and another located at 90 degrees is used to detect emitted photons. Total electron yield detection mode is also possible thanks to a specific sample holder equipped with an electrode that collects the charges created by the emitted electrons in the He gas brought from the He bath around the sample. The performance of the cryostat is described by measurements of the absorption coefficients versus the temperature for Cu and Co foils. For comparison, the absorption coefficient is also measured for Cu clusters. As expected from dimension effects, the Debye temperature obtained for the clusters is lower than that of bulk Cu.

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

NASA Technical Reports Server (NTRS)

Chi, J.-Y.; Gatos, H. C.

1977-01-01

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY

2009-10-13

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY; Kewisch, Jorg [Wading River, NY; Chang, Xiangyun [Middle Island, NY

2007-06-05

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Shot noise generated by graphene p–n junctions in the quantum Hall effect regime

PubMed Central

Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

2015-01-01

Graphene offers a unique system to investigate transport of Dirac Fermions at p–n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p–n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p–n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p–n junction length. For short p–n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p–n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing. PMID:26337067

Generation of first hard X-ray pulse at Tsinghua Thomson Scattering X-ray Source.

PubMed

Du, Yingchao; Yan, Lixin; Hua, Jianfei; Du, Qiang; Zhang, Zhen; Li, Renkai; Qian, Houjun; Huang, Wenhui; Chen, Huaibi; Tang, Chuanxiang

2013-05-01

Tsinghua Thomson Scattering X-ray Source (TTX) is the first-of-its-kind dedicated hard X-ray source in China based on the Thomson scattering between a terawatt ultrashort laser and relativistic electron beams. In this paper, we report the experimental generation and characterization of the first hard X-ray pulses (51.7 keV) via head-on collision of an 800 nm laser and 46.7 MeV electron beams. The measured yield is 1.0 × 10(6) per pulse with an electron bunch charge of 200 pC and laser pulse energy of 300 mJ. The angular intensity distribution and energy spectra of the X-ray pulse are measured with an electron-multiplying charge-coupled device using a CsI scintillator and silicon attenuators. These measurements agree well with theoretical and simulation predictions. An imaging test using the X-ray pulse at the TTX is also presented.

Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

NASA Astrophysics Data System (ADS)

Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

2009-04-01

A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.

Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

NASA Astrophysics Data System (ADS)

Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

2014-03-01

Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

Radiation Testing Electronics with Heavy Ions-The Best Way to Hit a Target Moving Ever Exponentially Faster

NASA Technical Reports Server (NTRS)

Ladbury, Ray

2018-01-01

In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avionics were being caused by cosmic rays (so-called single-event effects, or SEE), Moore's Law was only 7 years old. Now, more than 45 years on, the scaling that drove Moore's Law for its first 35 years has reached its limits. However, electronics technology continues to evolve exponentially and SEE remain a formidable issue for use of electronics in space. SEE occur when a single ionizing particle passes through a sensitive volume in an active semiconductor device and generates sufficient charge to cause anomalous behavior or failure in the device. Because SEE can occur at any time during the mission, the emphasis of SEE risk management methodologies is ensuring that all SEE modes in a device under test are detected by the test. Because a particle's probability of causing an SEE generally increases as the particle becomes more ionizing, heavy-ion beams have been and remain the preferred tools for elucidating SEE vulnerabilities. In this talk we briefly discuss space radiation environments and SEE mechanisms, describe SEE test methodologies and discuss current and future challenges for use of heavy-ion beams for SEE testing in an era when the continued validity of Moore's law depends on innovation rather than CMOS scaling.

PASOTRON high-energy microwave source

NASA Astrophysics Data System (ADS)

Goebel, Dan M.; Schumacher, Robert W.; Butler, Jennifer M.; Hyman, Jay, Jr.; Santoru, Joseph; Watkins, Ron M.; Harvey, Robin J.; Dolezal, Franklin A.; Eisenhart, Robert L.; Schneider, Authur J.

1992-04-01

A unique, high-energy microwave source, called PASOTRON (Plasma-Assisted Slow-wave Oscillator), has been developed. The PASOTRON utilizes a long-pulse E-gun and plasma- filled slow-wave structure (SWS) to produce high-energy pulses from a simple, lightweight device that utilizes no externally produced magnetic fields. Long pulses are obtained from a novel E-gun that employs a low-pressure glow discharge to provide a stable, high current- density electron source. The electron accelerator consists of a high-perveance, multi-aperture array. The E-beam is operated in the ion-focused regime where the plasma filling the SWS space-charge neutralizes the beam, and the self-pinch force compresses the beamlets and increases the beam current density. A scale-model PASOTRON, operating as a backward- wave oscillator in C-band with a 100-kV E-beam, has produced output powers in the 3 to 5 MW range and pulse lengths of over 100 microsecond(s) ec, corresponding to an integrated energy per pulse of up to 500 J. The E-beam to microwave-radiation power conversion efficiency is about 20%.

An all permanent magnet electron cyclotron resonance ion source for heavy ion therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yun, E-mail: caoyun@impcas.ac.cn; Li, Jia Qing; Sun, Liang Ting

2014-02-15

A high charge state all permanent Electron Cyclotron Resonance ion source, Lanzhou All Permanent ECR ion source no. 3-LAPECR3, has been successfully built at IMP in 2012, which will serve as the ion injector of the Heavy Ion Medical Machine (HIMM) project. As a commercial device, LAPECR3 features a compact structure, small size, and low cost. According to HIMM scenario more than 100 eμA of C{sup 5+} ion beam should be extracted from the ion source, and the beam emittance better than 75 π*mm*mrad. In recent commissioning, about 120 eμA of C{sup 5+} ion beam was got when work gasmore » was CH{sub 4} while about 262 eμA of C{sup 5+} ion beam was obtained when work gas was C{sub 2}H{sub 2} gas. The design and construction of the ion source and its low-energy transportation beam line, and the preliminary commissioning results will be presented in detail in this paper.« less

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Theoretical analysis of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator

NASA Astrophysics Data System (ADS)

Shin, Y. M.; Ryskin, N. M.; Won, J. H.; Han, S. T.; Park, G. S.

2006-03-01

The basic theory of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator consisting of two two-cavity klystron amplifiers reversely coupled through input/output slots is theoretically investigated. Application of Kirchhoff's laws to the coupled equivalent RLC circuit model of the device provides four nonlinear coupled equations, which are the first-order time-delayed differential equations. Analytical solutions obtained through linearization of the equations provide oscillation frequencies and thresholds of four fundamental eigenstates, symmetric/antisymmetric 0/π modes. Time-dependent output signals are numerically analyzed with variation of the beam current, and a self-modulation mechanism and transition to chaos scenario are examined. The oscillator shows a much stronger multistability compared to a delayed feedback klystron oscillator owing to the competitions among more diverse eigenmodes. A fully developed chaos region also appears at a relatively lower beam current, ˜3.5Ist, compared to typical vacuum tube oscillators (10-100Ist), where Ist is a start-oscillation current.

Thermal barrier coating resistant to sintering

DOEpatents

Subramanian, Ramesh; Seth, Brij B.

2004-06-29

A device (10) is made, having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10), is not soluble with the underlying ceramic layer (16) and is applied by a process that is not an electron beam physical vapor deposition process.

High Current Density Scandate Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

of Technology HFSS Ansoft Corporation’s High Frequency Structure Simulator TWT Traveling Wave Tube - device for generating high levels of RF power ...cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a tungsten matrix impregnated with a mixture of barium oxide...electron beam with the largest possible diameter, consistent with high gain, bandwidth, and efficiency at W- Band . The research concentrated on photonic

Mechanical design of thin-film diamond crystal mounting apparatus for coherence preservation hard x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming, E-mail: shu@aps.anl.gov; Shvyd’ko, Yuri V.; Stoupin, Stanislav

2016-07-27

A new thin-film diamond crystal mounting apparatus has been designed at the Advanced Photon Source (APS) for coherence preservation hard x-ray optics with optimized thermal contact and minimized crystal strain. This novel mechanical design can be applied to new development in the field of: x-ray optics cavities for hard x-ray free-electron laser oscillators (XFELOs), self-seeding monochromators for hard x-ray free-electron laser (XFEL) with high average thermal loading, high heat load diamond crystal monochromators and beam-sharing/beam-split-and-delay devices for XFEL facilities and future upgraded high-brightness coherent x-ray source in the MBA lattice configuration at the APS.

Design of an electrostatic phase shifting device for biological transmission electron microscopy.

PubMed

Koeck, Philip J B

2018-04-01

I suggest an electrostatic phase plate designed to broaden the contrast transfer function of a transmission electron microscope operated close to Scherzer defocus primarily in the low resolution direction. At higher defocus the low frequency behavior is equal to that close to Scherzer defocus, but CTF-correction becomes necessary to extend image interpretation to higher resolution. One simple realization of the phase plate consists of two ring shaped electrodes symmetrically surrounding the central beam. Since no physical components come into contact with the central beam and charge on the electrodes is controlled by an external voltage supply, problems with uncontrolled charging are expected to be reduced. Copyright © 2018 Elsevier B.V. All rights reserved.

Investigation of resistive switching behaviours in WO3-based RRAM devices

NASA Astrophysics Data System (ADS)

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

2011-01-01

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Note: Force- and torque-detection of high frequency electron spin resonance using a membrane-type surface-stress sensor

NASA Astrophysics Data System (ADS)

Takahashi, Hideyuki; Ishimura, Kento; Okamoto, Tsubasa; Ohmichi, Eiji; Ohta, Hitoshi

2018-03-01

We developed a practical useful method for force- and torque-detected electron spin resonance (FDESR/TDESR) spectroscopy in the millimeter wave frequency region. This method uses a commercially available membrane-type surface-stress (MSS) sensor. The MSS is composed of a silicon membrane supported by four beams in which piezoresistive paths are integrated for detecting the deformation of the membrane. Although this device has a lower spin sensitivity than a microcantilever, it offers several distinct advantages, including mechanical strength, ease of use, and versatility. These advantages make this device suitable for practical applications that require FDESR/TDESR.

Direct printing of micro/nanostructures by femtosecond laser excitation of nanocrystals

NASA Astrophysics Data System (ADS)

Shou, Wan; Pan, Heng

2017-02-01

Direct writing using single or multiple energized beams (e.g. laser, ion or electron beams) provides high feature resolution (<1μm) compared with other solution-based printing methods (e.g. inkjet printing). There have been extensive researches on micro/nano additive manufacturing methods employing laser (or optical) and ion/electron beams. Many of these processes utilize specially designed photosensitive materials consisting of additives and effective components. Due to the presence of additive (such as polymer and binders), the effective components are relatively low resulting in high threshold for device operation. In order to direct print functional devices at low cost, there has been extensive research on laser processing of pre-synthesized nanomaterials for non-polymer functional device manufacturing. Pre-synthesized nanocrystals can have better control in the stoichiometry and crystallinity. In addition, pre-synthesis process enjoys the flexibility in material choice since a variety of materials can be synthesized. Femtosecond laser assembly and deposition of nanomaterials can be a feasible 3D micro/nano additive manufacturing approach, although mechanisms leading to assembly and deposition have not been fully understood. In this paper, we propose a mechanism for 2D and 3D deposition of nanocrystals by laser excitation with moderate peak intensities(1011-1012 W/cm2). It is postulated that laser induced charging is responsible for the deposition. The scheme paves the way for laser selective electrophoretic deposition as a micro/nanoscale additive manufacturing approach.

Harmonic Kicker RF Cavity for the Jefferson Lab Electron-Ion Collider EM Simulation, Modification, and Measurements

NASA Astrophysics Data System (ADS)

Overstreet, Sarah; Wang, Haipeng

2017-09-01

An important step in the conceptual design for the future Jefferson Lab Electron-Ion Collider (JLEIC) is the development of supporting technologies for the Energy Recovery Linac (ERL) Electron Cooling Facility. The Harmonic Radiofrequency (RF) kicker cavity is one such device that is responsible for switching electron bunches in and out of the Circulator Cooling Ring (CCR) from and to the ERL, which is a critical part of the ion cooling process. Last year, a half scale prototype of the JLEIC harmonic RF kicker model was designed with resonant frequencies to support the summation of 5 odd harmonics (95.26 MHz, 285.78 MHz, 476.30 MHz, 666.82 MHz, and 857.35 MHz); however, the asymmetry of the kicker cavity gives rise to multipole components of the electric field at the electron-beam axis of the cavity. Previous attempts to symmetrize the electric field of this asymmetrical RF cavity have been unsuccessful. The aim of this study is to modify the existing prototype for a uniform electric field across the beam pathway so that the electron bunches will experience nearly zero beam current loading. In addition to this, we have driven the unmodified cavity with the harmonic sum and used the wire stretching method for an analysis of the multipole electric field components.

21 CFR 892.1610 - Diagnostic x-ray beam-limiting device.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Diagnostic x-ray beam-limiting device. 892.1610... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1610 Diagnostic x-ray beam-limiting device. (a) Identification. A diagnostic x-ray beam-limiting device is a device such as a collimator, a...

21 CFR 892.1610 - Diagnostic x-ray beam-limiting device.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Diagnostic x-ray beam-limiting device. 892.1610... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1610 Diagnostic x-ray beam-limiting device. (a) Identification. A diagnostic x-ray beam-limiting device is a device such as a collimator, a...

21 CFR 892.1610 - Diagnostic x-ray beam-limiting device.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Diagnostic x-ray beam-limiting device. 892.1610... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1610 Diagnostic x-ray beam-limiting device. (a) Identification. A diagnostic x-ray beam-limiting device is a device such as a collimator, a...

21 CFR 892.1610 - Diagnostic x-ray beam-limiting device.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray beam-limiting device. 892.1610... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1610 Diagnostic x-ray beam-limiting device. (a) Identification. A diagnostic x-ray beam-limiting device is a device such as a collimator, a...

21 CFR 892.1610 - Diagnostic x-ray beam-limiting device.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Diagnostic x-ray beam-limiting device. 892.1610... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1610 Diagnostic x-ray beam-limiting device. (a) Identification. A diagnostic x-ray beam-limiting device is a device such as a collimator, a...

A cesium TELEC experiment at Lewis Research Center

NASA Technical Reports Server (NTRS)

Britt, E. J.

1979-01-01

The thermoelectronic laser energy converter (TELEC), was studied as a method of converting a 10.6 mm CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma was produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt. The magnitudes of these electric outputs were smaller than anticipated but consistent with the power levels of the laser during this experiment.

A high-speed scintillation-based electronic portal imaging device to quantitatively characterize IMRT delivery.

PubMed

Ranade, Manisha K; Lynch, Bart D; Li, Jonathan G; Dempsey, James F

2006-01-01

We have developed an electronic portal imaging device (EPID) employing a fast scintillator and a high-speed camera. The device is designed to accurately and independently characterize the fluence delivered by a linear accelerator during intensity modulated radiation therapy (IMRT) with either step-and-shoot or dynamic multileaf collimator (MLC) delivery. Our aim is to accurately obtain the beam shape and fluence of all segments delivered during IMRT, in order to study the nature of discrepancies between the plan and the delivered doses. A commercial high-speed camera was combined with a terbium-doped gadolinium-oxy-sulfide (Gd2O2S:Tb) scintillator to form an EPID for the unaliased capture of two-dimensional fluence distributions of each beam in an IMRT delivery. The high speed EPID was synchronized to the accelerator pulse-forming network and gated to capture every possible pulse emitted from the accelerator, with an approximate frame rate of 360 frames-per-second (fps). A 62-segment beam from a head-and-neck IMRT treatment plan requiring 68 s to deliver was recorded with our high speed EPID producing approximately 6 Gbytes of imaging data. The EPID data were compared with the MLC instruction files and the MLC controller log files. The frames were binned to provide a frame rate of 72 fps with a signal-to-noise ratio that was sufficient to resolve leaf positions and segment fluence. The fractional fluence from the log files and EPID data agreed well. An ambiguity in the motion of the MLC during beam on was resolved. The log files reported leaf motions at the end of 33 of the 42 segments, while the EPID observed leaf motions in only 7 of the 42 segments. The static IMRT segment shapes observed by the high speed EPID were in good agreement with the shapes reported in the log files. The leaf motions observed during beam-on for step-and-shoot delivery were not temporally resolved by the log files.

SU-E-T-781: Using An Electronic Portal Imaging Device (EPID) for Correlating Linac Photon Beam Energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yaddanapudi, S; Cai, B; Sun, B

2015-06-15

Purpose: Electronic portal imaging devices (EPIDs) have proven to be useful for measuring several parameters of interest in linear accelerator (linac) quality assurance (QA). The purpose of this project was to evaluate the feasibility of using EPIDs for determining linac photon beam energies. Methods: Two non-clinical Varian TrueBeam linacs (Varian Medical Systems, Palo Alto, CA) with 6MV and 10MV photon beams were used to perform the measurements. The linacs were equipped with an amorphous silicon based EPIDs (aSi1000) that were used for the measurements. We compared the use of flatness versus percent depth dose (PDD) for predicting changes in linacmore » photon beam energy. PDD was measured in 1D water tank (Sun Nuclear Corporation, Melbourne FL) and the profiles were measured using 2D ion-chamber array (IC-Profiler, Sun Nuclear) and the EPID. Energy changes were accomplished by varying the bending magnet current (BMC). The evaluated energies conformed with the AAPM TG142 tolerance of ±1% change in PDD. Results: BMC changes correlating with a ±1% change in PDD corresponded with a change in flatness of ∼1% to 2% from baseline values on the EPID. IC Profiler flatness values had the same correlation. We observed a similar trend for the 10MV beam energy changes. Our measurements indicated a strong correlation between changes in linac photon beam energy and changes in flatness. For all machines and energies, beam energy changes produced change in the uniformity (AAPM TG-142), varying from ∼1% to 2.5%. Conclusions: EPID image analysis of beam profiles can be used to determine linac photon beam energy changes. Flatness-based metrics or uniformity as defined by AAPM TG-142 were found to be more sensitive to linac photon beam energy changes than PDD. Research funding provided by Varian Medical Systems. Dr. Sasa Mutic receives compensation for providing patient safety training services from Varian Medical Systems, the sponsor of this study.« less

Detection of birefringent microcrystals in bile

DOEpatents

Darrow, Chris; Mirhej, Andrew; Seger, Tino

2003-09-30

A transparent flow channel fluidly communicates a fluid source and a collection reservoir. A light beam passes through a first polarizer having a first plane of polarization. The flow channel is orthogonal to the light beam. The light beam passes through a fluid sample as it flows through the flow channel. The light beam is then filtered through a second polarizer having a second plane of polarization rotated 90.degree. from the first plane of polarization. The birefringence of certain crystalline materials present in the fluid sample rotates the plane of polarization of the light beam. The presence of these microcrystals thus causes a component of the beam to pass through the second polarizer and impinge an electronic photo-detector located in the path of the beam. The photo-detector signals the presence of the microcrystals by generating voltage pulses. A display device visually presents the quantitative results of the assay.

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

1993-01-01

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

DOEpatents

Asokakumar, P.P.V.; Lynn, K.G.

1993-04-06

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO[sub 2]/Si, MOS or other semiconductor devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vilkas, M J; Ishikawa, Y; Trabert, E

Many-Body Perturbation Theory (MBPT) has been employed to calculate with high wavelength accuracy the extreme ultraviolet (EUV) spectra of F-like to P-like Xe ions. They discuss the reliability of the new calculations using the example of EUV beam-foil spectra of Xe, in which n = 3, {Delta}n = 0 transitions of Na-, Mg-, Al-like, and Si-like ions have been found to dominate. A further comparison is made with spectra from an electron beam ion trap, that is, from a device with a very different (low density) excitation balance.

Imaging electron flow from collimating contacts in graphene

NASA Astrophysics Data System (ADS)

Bhandari, S.; Lee, G. H.; Watanabe, K.; Taniguchi, T.; Kim, P.; Westervelt, R. M.

2018-04-01

The ballistic motion of electrons in graphene opens exciting opportunities for electron-optic devices based on collimated electron beams. We form a collimating contact in a hBN-encapsulated graphene hall bar by adding zigzag contacts on either side of an electron emitter that absorb stray electrons; collimation can be turned off by floating the zig-zag contacts. The electron beam is imaged using a liquid-He cooled scanning gate microscope (SGM). The tip deflects electrons as they pass from the collimating contact to a receiving contact on the opposite side of the channel, and an image of electron flow can be made by displaying the change in transmission as the tip is raster scanned across the sample. The angular half width Δθ of the electron beam is found by applying a perpendicular magnetic field B that bends electron paths into cyclotron orbits. The images reveal that the electron flow from the collimating contact drops quickly at B  =  0.05 T when the electron orbits miss the receiving contact. The flow for the non-collimating case persists longer, up to B  =  0.19 T, due to the broader range of entry angles. Ray-tracing simulations agree well with the experimental images. By fitting the fields B at which the magnitude of electron flow drops in the experimental SGM images, we find Δθ  =  9° for electron flow from the collimating contact, compared with Δθ  =  54° for the non-collimating case.

Micro-channel-based high specific power lithium target

NASA Astrophysics Data System (ADS)

Mastinu, P.; Martın-Hernández, G.; Praena, J.; Gramegna, F.; Prete, G.; Agostini, P.; Aiello, A.; Phoenix, B.

2016-11-01

A micro-channel-based heat sink has been produced and tested. The device has been developed to be used as a Lithium target for the LENOS (Legnaro Neutron Source) facility and for the production of radioisotope. Nevertheless, applications of such device can span on many areas: cooling of electronic devices, diode laser array, automotive applications etc. The target has been tested using a proton beam of 2.8MeV energy and delivering total power shots from 100W to 1500W with beam spots varying from 5mm2 to 19mm2. Since the target has been designed to be used with a thin deposit of lithium and since lithium is a low-melting-point material, we have measured that, for such application, a specific power of about 3kW/cm2 can be delivered to the target, keeping the maximum surface temperature not exceeding 150° C.

The effect of X-ray scattering by water in the irradiation of cell cultures for the dosimetric characterization of a new prototype of IORT (Intra-Operative Radiation Therapy) device: Monte Carlo simulation and experimental validation.

PubMed

Ceccolini, E; Ferrari, P; Castelluccio, D M; Mostacci, D; Sumini, M

2013-10-01

The electron beam emitted backward by plasma focus devices is being considered as a radiation source for Intra-Operative Radiation Therapy (IORT) applications. Radiobiological investigations have been conducted to assess the potential of this new prototype of IORT device. A standard x-ray beam, ISO-H60, was used for comparison, irradiating cell cultures in a holder filled with an aqueous solution. The influence of scattering by the culture water and by the walls of the holder was investigated to determine their influence on the dose delivered to the cell culture. MCNPX simulations were run and experimental measurements conducted. The effect of scattering by the holder was found to be negligible; scattering by the culture water was determined to give an increase in dose of the order of 10%.

Chromaticity of the lattice and beam stability in energy recovery linacs

NASA Astrophysics Data System (ADS)

Litvinenko, Vladimir N.

2012-07-01

Energy recovery linacs (ERLs) are an emerging generation of accelerators that promises to revolutionize the fields of high-energy physics and photon sciences. These accelerators combine the advantages of linear accelerators with that of storage rings, and augur the delivery of electron beams of unprecedented power and quality. The use of superconducting radio-frequency cavities converts ERLs into nearly perfect “perpetuum mobile” accelerators, wherein the beam is accelerated to the desired energy, used, and then yields the energy back to the rf field. However, one potential weakness of these devices is transverse beam breakup instability that could severely limit the available beam current. In this paper, I propose a novel method of suppressing these dangerous effects via a natural phenomenon in the accelerators, viz., the chromaticity of the transverse motion.

Graphene nanopore devices for DNA sensing.

PubMed

Merchant, Chris A; Drndić, Marija

2012-01-01

We describe here a method for detecting the translocation of individual DNA molecules through nanopores created in graphene membranes. The devices consist of 1-5-nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, and the reduced electrical resistance, we observe larger blocked currents than for traditional solid-state nanopores. We also show how ionic current noise levels can be reduced with the atomic-layer deposition of a few nanometers of titanium dioxide over the graphene surface. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor, and its use opens the door to a new future class of nanopore devices in which electronic sensing and control is performed directly at the pore.

DNA translocation through graphene nanopores.

PubMed

Merchant, Christopher A; Healy, Ken; Wanunu, Meni; Ray, Vishva; Peterman, Neil; Bartel, John; Fischbein, Michael D; Venta, Kimberly; Luo, Zhengtang; Johnson, A T Charlie; Drndić, Marija

2010-08-11

We report on DNA translocations through nanopores created in graphene membranes. Devices consist of 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter. Due to the thin nature of the graphene membranes, we observe larger blocked currents than for traditional solid-state nanopores. However, ionic current noise levels are several orders of magnitude larger than those for silicon nitride nanopores. These fluctuations are reduced with the atomic-layer deposition of 5 nm of titanium dioxide over the device. Unlike traditional solid-state nanopore materials that are insulating, graphene is an excellent electrical conductor. Use of graphene as a membrane material opens the door to a new class of nanopore devices in which electronic sensing and control are performed directly at the pore.

Method for photolithographic definition of recessed features on a semiconductor wafer utilizing auto-focusing alignment

DOEpatents

Farino, A.J.; Montague, S.; Sniegowski, J.J.; Smith, J.H.; McWhorter, P.J.

1998-07-21

A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusing light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface. 15 figs.

Method for photolithographic definition of recessed features on a semiconductor wafer utilizing auto-focusing alignment

DOEpatents

Farino, Anthony J.; Montague, Stephen; Sniegowski, Jeffry J.; Smith, James H.; McWhorter, Paul J.

1998-01-01

A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusing light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface.

Implementation of the Timepix ASIC in the Scalable Readout System

NASA Astrophysics Data System (ADS)

Lupberger, M.; Desch, K.; Kaminski, J.

2016-09-01

We report on the development of electronics hardware, FPGA firmware and software to provide a flexible multi-chip readout of the Timepix ASIC within the framework of the Scalable Readout System (SRS). The system features FPGA-based zero-suppression and the possibility to read out up to 4×8 chips with a single Front End Concentrator (FEC). By operating several FECs in parallel, in principle an arbitrary number of chips can be read out, exploiting the scaling features of SRS. Specifically, we tested the system with a setup consisting of 160 Timepix ASICs, operated as GridPix devices in a large TPC field cage in a 1 T magnetic field at a DESY test beam facility providing an electron beam of up to 6 GeV. We discuss the design choices, the dedicated hardware components, the FPGA firmware as well as the performance of the system in the test beam.

Compton backscattered collimated x-ray source

DOEpatents

Ruth, R.D.; Huang, Z.

1998-10-20

A high-intensity, inexpensive and collimated x-ray source is disclosed for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications. 4 figs.

Compton backscattered collimated x-ray source

DOEpatents

Ruth, Ronald D.; Huang, Zhirong

1998-01-01

A high-intensity, inexpensive and collimated x-ray source for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications.

Compton backscattered collmated X-ray source

DOEpatents

Ruth, Ronald D.; Huang, Zhirong

2000-01-01

A high-intensity, inexpensive and collimated x-ray source for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications.

Electron beam injected into ground generates subsoil x-rays that may deactivate concealed electronics used to trigger explosive devices

NASA Astrophysics Data System (ADS)

Retsky, Michael

2008-04-01

Explosively formed projectiles (EFP) are a major problem in terrorism and asymmetrical warfare. EFPs are often triggered by ordinary infrared motion detectors. A potential weak link is that such electronics are not hardened to ionizing radiation and can latch-up or enter other inoperative states after exposure to a single short event of ionizing radiation. While these can often be repaired with a power restart, they also can produce shorts and permanent damage. A problem of course is that we do not want to add radiation exposure to the long list of war related hazards. Biological systems are highly sensitive to integrated dosage but show no particular sensitivity to short pulses. There may be a way to generate short pulsed subsoil radiation to deactivate concealed electronics without introducing radiation hazards to military personnel and civilian bystanders. Electron beams of 30 MeV that can be produced by portable linear accelerators (linacs) propagate >20 m in air and 10-12 cm in soil. X-radiation is produced by bremsstrahlung and occurs subsoil beneath the point of impact and is mostly forward directed. Linacs 1.5 m long can produce 66 MWatt pulses of subsoil x-radiation 1 microsecond or less in duration. Untested as yet, such a device could be mounted on a robotic vehicle that precedes a military convoy and deactivates any concealed electronics within 10-20 meters on either side of the road.

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide

NASA Astrophysics Data System (ADS)

Leveneur, J.; Langlois, M.; Kennedy, J.; Metson, James B.

2017-10-01

In micro- and nano- electronic device fabrication, and particularly 3D designs, the diffusion of a metal into sublayers during annealing needs to be minimized as it is usually detrimental to device performance. Diffusion also causes the formation and growth of nanoprecipitates in solid matrices. In this paper, the diffusion behavior of low energy, low fluence, ion implanted iron into a thermally grown silicon oxide layer on silicon is investigated. Different ion beam analysis and imaging techniques were used. Magnetization measurements were also undertaken to provide evidence of nanocrystalline ordering. While standard vacuum furnace annealing and electron beam annealing lead to fast diffusion of the implanted species towards the Si/SiO2 interface, we show that furnace annealing in an oxygen rich atmosphere prevents the diffusion of iron that, in turn, limits the growth of the nanoparticles. The diffusion and particle growth is also greatly reduced when oxygen atoms are implanted in the SiO2 prior to Fe implantation, effectively acting as a diffusion barrier. The excess oxygen is hypothesized to trap Fe atoms and reduce their mean free path during the diffusion. Monte-Carlo simulations of the diffusion process which consider the random walk of Fe, Fick's diffusion of O atoms, Fe precipitation, and desorption of the SiO2 layer under the electron beam annealing were performed. Simulation results for the three preparation conditions are found in good agreement with the experimental data.

Electron beam patterning for writing of positively charged gold colloidal nanoparticles

NASA Astrophysics Data System (ADS)

Zafri, Hadar; Azougi, Jonathan; Girshevitz, Olga; Zalevsky, Zeev; Zitoun, David

2018-02-01

Synthesis at the nanoscale has progressed at a very fast pace during the last decades. The main challenge today lies in precise localization to achieve efficient nanofabrication of devices. In the present work, we report on a novel method for the patterning of gold metallic nanoparticles into nanostructures on a silicon-on-insulator (SOI) wafer. The fabrication makes use of relatively accessible equipment, a scanning electron microscope (SEM), and wet chemical synthesis. The electron beam implants electrons into the insulating material, which further anchors the positively charged Au nanoparticles by electrostatic attraction. The novel fabrication method was applied to several substrates useful in microelectronics to add plasmonic particles. The resolution and surface density of the deposition were tuned, respectively, by the electron energy (acceleration voltage) and the dose of electronic irradiation. We easily achieved the smallest written feature of 68 ± 18 nm on SOI, and the technique can be extended to any positively charged nanoparticles, while the resolution is in principle limited by the particle size distribution and the scattering of the electrons in the substrate. [Figure not available: see fulltext.

Spatially modulated laser pulses for printing electronics.

PubMed

Auyeung, Raymond C Y; Kim, Heungsoo; Mathews, Scott; Piqué, Alberto

2015-11-01

The use of a digital micromirror device (DMD) in laser-induced forward transfer (LIFT) is reviewed. Combining this technique with high-viscosity donor ink (silver nanopaste) results in laser-printed features that are highly congruent in shape and size to the incident laser beam spatial profile. The DMD empowers LIFT to become a highly parallel, rapidly reconfigurable direct-write technology. By adapting half-toning techniques to the DMD bitmap image, the laser transfer threshold fluence for 10 μm features can be reduced using an edge-enhanced beam profile. The integration of LIFT with this beam-shaping technique allows the printing of complex large-area patterns with a single laser pulse.

Arc discharge regulation of a megawatt hot cathode bucket ion source for the experimental advanced superconducting tokamak neutral beam injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie Yahong; Hu Chundong; Liu Sheng

2012-01-15

Arc discharge of a hot cathode bucket ion source tends to be unstable what attributes to the filament self-heating and energetic electrons backstreaming from the accelerator. A regulation method, which based on the ion density measurement by a Langmuir probe, is employed for stable arc discharge operation and long pulse ion beam generation. Long pulse arc discharge of 100 s is obtained based on this regulation method of arc power. It establishes a foundation for the long pulse arc discharge of a megawatt ion source, which will be utilized a high power neutral beam injection device.

Arc discharge regulation of a megawatt hot cathode bucket ion source for the experimental advanced superconducting tokamak neutral beam injector.

PubMed

Xie, Yahong; Hu, Chundong; Liu, Sheng; Jiang, Caichao; Li, Jun; Liang, Lizhen

2012-01-01

Arc discharge of a hot cathode bucket ion source tends to be unstable what attributes to the filament self-heating and energetic electrons backstreaming from the accelerator. A regulation method, which based on the ion density measurement by a Langmuir probe, is employed for stable arc discharge operation and long pulse ion beam generation. Long pulse arc discharge of 100 s is obtained based on this regulation method of arc power. It establishes a foundation for the long pulse arc discharge of a megawatt ion source, which will be utilized a high power neutral beam injection device.

AFB's Computerized Travel Aid: Two Years of Research and Development.

ERIC Educational Resources Information Center

Uslan, Mark M.; And Others

1983-01-01

Progress on the computerized travel aid, an electronic device, using elements of the Polaroid Sonar Camera and a microprocessor, for visually handicapped persons is reviewed, and research on the effectiveness of various models noted. Recommended modifications touch on aspects of mounting, beam shape, and audible outputs. (CL)

78 FR 29387 - Government-Owned Inventions, Available for Licensing

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-20

... System for Physiologically Modulating Action Role-playing Open World Video Games and Simulations Which... Deposition Measurement for the Electron Beam Free Form Fabrication (EBF3) Process; NASA Case No.: LAR-17887-1... Modulating Videogames and Simulations Which Use Gesture and Body Image Sensing Control Input Devices; NASA...

Time-dependent, multimode interaction analysis of the gyroklystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swati, M. V., E-mail: swati.mv.ece10@iitbhu.ac.in; Chauhan, M. S.; Jain, P. K.

2016-08-15

In this paper, a time-dependent multimode nonlinear analysis for the gyroklystron amplifier has been developed by extending the analysis of gyrotron oscillators by employing the self-consistent approach. The nonlinear analysis developed here has been validated by taking into account the reported experimental results for a 32.3 GHz, three cavity, second harmonic gyroklystron operating in the TE{sub 02} mode. The analysis has been used to estimate the temporal RF growth in the operating mode as well as the nearby competing modes. Device gain and bandwidth have been computed for different drive powers and frequencies. The effect of various beam parameters, such asmore » beam voltage, beam current, and pitch factor, has also been studied. The computational results have estimated the gyroklystron saturated RF power ∼319 kW at 32.3 GHz with efficiency ∼23% and gain ∼26.3 dB with device bandwidth ∼0.027% (8 MHz) for a 70 kV, 20 A electron beam. The computed results are found to be in agreement with the experimental values within 10%.« less

SU-F-T-70: A High Dose Rate Total Skin Electron Irradiation Technique with A Specific Inter-Film Variation Correction Method for Very Large Electron Beam Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, X; Rosenfield, J; Dong, X

2016-06-15

Purpose: Rotational total skin electron irradiation (RTSEI) is used in the treatment of cutaneous T-cell lymphoma. Due to inter-film uniformity variations the dosimetry measurement of a large electron beam of a very low energy is challenging. This work provides a method to improve the accuracy of flatness and symmetry for a very large treatment field of low electron energy used in dual beam RTSEI. Methods: RTSEI is delivered by dual angles field a gantry of ±20 degrees of 270 to cover the upper and the lower halves of the patient body with acceptable beam uniformity. The field size is inmore » the order of 230cm in vertical height and 120 cm in horizontal width and beam energy is a degraded 6 MeV (6 mm of PMMA spoiler). We utilized parallel plate chambers, Gafchromic films and OSLDs as a measuring devices for absolute dose, B-Factor, stationary and rotational percent depth dose and beam uniformity. To reduce inter-film dosimetric variation we introduced a new specific correction method to analyze beam uniformity. This correction method uses some image processing techniques combining film value before and after radiation dose to compensate the inter-variation dose response differences among films. Results: Stationary and rotational depth of dose demonstrated that the Rp is 2 cm for rotational and the maximum dose is shifted toward the surface (3mm). The dosimetry for the phantom showed that dose uniformity reduced to 3.01% for the vertical flatness and 2.35% for horizontal flatness after correction thus achieving better flatness and uniformity. The absolute dose readings of calibrated films after our correction matched with the readings from OSLD. Conclusion: The proposed correction method for Gafchromic films will be a useful tool to correct inter-film dosimetric variation for the future clinical film dosimetry verification in very large fields, allowing the optimizations of other parameters.« less

Electron cyclotron resonance ion source plasma characterization by X-ray spectroscopy and X-ray imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mascali, David, E-mail: davidmascali@lns.infn.it; Castro, Giuseppe; Celona, Luigi

2016-02-15

An experimental campaign aiming to investigate electron cyclotron resonance (ECR) plasma X-ray emission has been recently carried out at the ECRISs—Electron Cyclotron Resonance Ion Sources laboratory of Atomki based on a collaboration between the Debrecen and Catania ECR teams. In a first series, the X-ray spectroscopy was performed through silicon drift detectors and high purity germanium detectors, characterizing the volumetric plasma emission. The on-purpose developed collimation system was suitable for direct plasma density evaluation, performed “on-line” during beam extraction and charge state distribution characterization. A campaign for correlating the plasma density and temperature with the output charge states and themore » beam intensity for different pumping wave frequencies, different magnetic field profiles, and single-gas/gas-mixing configurations was carried out. The results reveal a surprisingly very good agreement between warm-electron density fluctuations, output beam currents, and the calculated electromagnetic modal density of the plasma chamber. A charge-coupled device camera coupled to a small pin-hole allowing X-ray imaging was installed and numerous X-ray photos were taken in order to study the peculiarities of the ECRIS plasma structure.« less

Simulating Lattice Image of Suspended Graphene Taken by Helium Ion Microscopy

NASA Astrophysics Data System (ADS)

Miyamoto, Yoshiyuki; Zhang, Hong; Rubio, Angel

2013-03-01

Atomic scale image in nano-scale helps us to characterize property of graphene, and performance of high-resolution transmission electron microscopy (HRTEM) is significant, so far. While a tool without pre-treatment of samples is demanded in practice. Helium ion microscopy (HIM), firstly reported by Word et. al. in 2006, was applied for monitoring graphene in device structure (Lumme, et. al., 2009). Motivated by recent HIM explorations, we examined the possibility of taking lattice image of suspended graphene by HIM. The intensity of secondary emitted electron is recorded as a profile of scanned He+-beam in HIM measurement. We mimicked this situation by performing electron-ion dynamics based on the first-principles simulation within the time-dependent density functional theory. He+ ion collision on single graphene sheet at several impact points were simulated and we found that the amount of secondary emitted electron from graphene reflected the valence charge distribution of the graphene sheet. Therefore HIM using atomically thin He-beam should be able to provide the lattice image, and we propose that an experiment generating ultra-thin He+ ion beam (Rezeq et. al., 2006) should be combined with HIM technique. All calculations were performed by using the Earth Simulator.

Research on Vacuum Laser Accelerator and Proof-of Principle Experiment

NASA Astrophysics Data System (ADS)

Shao, Lei

This thesis discovers a proof-of-principle theory of Vacuum Laser Acceleration (VLA) and proposes a new acceleration mechanism---Capture and Acceleration Scenario (CAS) in our far-field laser acceleration research, which is a promising new scheme in advanced acceleration field. In this thesis, I studied electrons' dynamic behaviors while interacting with intense laser beam. There are two kinds of dynamics trajectories, namely IS (Inelastic Scattering) and CAS. In CAS, electrons can be captured and moving along the laser beam for a long time and receive considerable energy exchange from the laser field, rather than quickly expelled from the intense field region of the laser as predicted by the conventional Ponderomotive Potential Model (PPM). This thesis shows the research on most parameters of both laser beam and electron beam which will affect this VLA scheme. One of the primary factors is the laser intensity. Relatively high laser intensity is critically required for VLA, and there are thresholds of intensity a0( th) for CAS occurrence; the thresholds are different under different laser beam waist widths which is also a very important parameter of laser beam. Laser intensity is still a big obstacle nowadays. In the last decade there are only a few laboratories have the laser power to ˜1019 W/cm2 and above. Our simulation shows that laser intensity threshold of CAS is around a0 = 5˜8, in correspondence to laser power around 1019˜1022 W/cm 2 depending on different wave length and waist width. The interaction is also sensitive to various electron beam parameters, such as the optimal initial electron energy falls in the range of 4--15 MeV, electron incident angle and position, and so on. At last the thesis presents out experimental work on this new VLA scheme. The collaboration is between our UCLA group and Brookhaven National Lab - Accelerator Test Facility (BNL-ATF). At BNL-ATF, they have both intense laser beam and high quality electron beam. The characters of BNL-ATF fit our project very well. The laser system at ATF is a short pulse CO2 laser. Under present ATF condition, the peak power of the CO2 laser is around 5J with pulse duration 5ps. Therefore the maximum laser intensity can reach a 0 ≈ 1.0. Such level of laser intensity is not sufficient to perform violent electron acceleration-CAS according to the threshold we defined. However this level intensity is already high enough to see basic proof-of-principle signal based on our extensive simulations with exact practical ATF experimental conditions. Another important factor is the electron beam condition. ATF uses photoinjector Radio Frequency (RF) gun system for electron beam. The working frequency is at constant level 2856MHz. Generally the electron beam deliver energy around 40MeV˜60MeV to the transport beam line. However as we mentioned before with relatively low laser intensity the electron initial energy is required to be lower as well correspondently. We tried best to tuned ATF electron beam energy down to 15MeV. With laser intensity around a 0 ≈ 1.0 and electron beam 15MeV, our simulation indicates to see energy spread expansion after interaction, and this effect increases while the laser intensity increases (even slightly change from a 0 ≈ 0.9 to 2.2). The experiment design is completed based on ATF beam line condition. The design and layout are presented. All the optical devices are acquired and machined. Installation and alignment have been done a few times for testing. (Abstract shortened by UMI.)

Thermoelectric Properties of Complex Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Cain, Tyler Andrew

Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

Status of the Beam Thermalization Area at the NSCL

NASA Astrophysics Data System (ADS)

Cooper, Kortney; Barquest, Bradley; Morrissey, David; Rodriguez, Jose Alberto; Schwarz, Stefan; Sumithrarachchi, Chandana; Kwarsick, Jeff; Savard, Guy

2013-10-01

Beam thermalization is a necessary process for the production of low-energy ion beams at projectile fragmentation facilities. Present beam thermalization techniques rely on passing high-energy ion beams through solid degraders followed by a gas cell where the remaining kinetic energy is dissipated through collisions with buffer gas atoms. Recently, the National Superconducting Cyclotron Laboratory (NSCL) upgraded its thermalization area with the implementation of new large acceptance beam lines and a large RF-gas catcher constructed by Argonne National Lab (ANL). Two high-energy beam lines were commissioned along with the installation and commissioning of this new device in late 2012. Low-energy radioactive ion beams have been successfully delivered to the Electron Beam Ion Trap (EBIT) charge breeder for the ReA3 reaccelerator, the SuN detector, the Low Energy Beam Ion Trap (LEBIT) penning trap, and the Beam Cooler and Laser Spectroscopy (BeCoLa) collinear laser beamline. Construction of a gas-filled reverse cyclotron dubbed the CycStopper is also underway. The status of the beam thermalization area will be presented and the overall efficiency of the system will be discussed.

Electron Beam Materials Irradiators

NASA Astrophysics Data System (ADS)

Cleland, Marshall R.

2012-06-01

Radiation processing is a well established method for enhancing the properties of materials and commercial products by treating them with ionizing energy in the form of high-energy electrons, X-rays, and gamma rays. Beneficial effects include polymerizing, cross-linking, grafting and degrading plastics, sterilizing single-use medical devices, disinfecting and disinfesting fresh foods, purifying drinking water, treating wastewater and other toxic waste materials that harm the environment, and many other applications that are still being evaluated. Industrial electron accelerators of several types have been developed and are being used for these applications. More than 1800 electron accelerators are presently installed in facilities worldwide for these purposes.

Interferometric source of multi-color, multi-beam entangled photons with mirror and mixer

DOEpatents

Dress, William B.; Kisner, Roger A.; Richards, Roger K.

2004-06-01

53 Systems and methods are described for an interferometric source of multi-color, multi-beam entangled photons. An apparatus includes: a multi-refringent device optically coupled to a source of coherent energy, the multi-refringent device providing a beam of multi-color entangled photons; a condenser device optically coupled to the multi-refringent device, the condenser device i) including a mirror and a mixer and ii) converging two spatially resolved portions of the beam of multi-color entangled photons into a converged multi-color entangled photon beam; a tunable phase adjuster optically coupled to the condenser device, the tunable phase adjuster changing a phase of at least a portion of the converged multi-color entangled photon beam to generate a first interferometeric multi-color entangled photon beam; and a beam splitter optically coupled to the condenser device, the beam splitter combining the first interferometeric multi-color entangled photon beam with a second interferometric multi-color entangled photon beam.

A Method to Improve Electron Density Measurement of Cone-Beam CT Using Dual Energy Technique

PubMed Central

Men, Kuo; Dai, Jian-Rong; Li, Ming-Hui; Chen, Xin-Yuan; Zhang, Ke; Tian, Yuan; Huang, Peng; Xu, Ying-Jie

2015-01-01

Purpose. To develop a dual energy imaging method to improve the accuracy of electron density measurement with a cone-beam CT (CBCT) device. Materials and Methods. The imaging system is the XVI CBCT system on Elekta Synergy linac. Projection data were acquired with the high and low energy X-ray, respectively, to set up a basis material decomposition model. Virtual phantom simulation and phantoms experiments were carried out for quantitative evaluation of the method. Phantoms were also scanned twice with the high and low energy X-ray, respectively. The data were decomposed into projections of the two basis material coefficients according to the model set up earlier. The two sets of decomposed projections were used to reconstruct CBCT images of the basis material coefficients. Then, the images of electron densities were calculated with these CBCT images. Results. The difference between the calculated and theoretical values was within 2% and the correlation coefficient of them was about 1.0. The dual energy imaging method obtained more accurate electron density values and reduced the beam hardening artifacts obviously. Conclusion. A novel dual energy CBCT imaging method to calculate the electron densities was developed. It can acquire more accurate values and provide a platform potentially for dose calculation. PMID:26346510

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cosentino, L.; Pappalardo, A.; Piscopo, M.

During 2014, the second experimental area (EAR2) was completed at the n-TOF neutron beam facility at CERN (n-TOF indicates neutron beam measurements by means of time of flight technique). The neutrons are produced via spallation, by means of a high-intensity 20 GeV pulsed proton beam impinging on a thick target. The resulting neutron beam covers the energy range from thermal to several GeV. In this paper, we describe two beam diagnostic devices, both exploiting silicon detectors coupled with neutron converter foils containing {sup 6}Li. The first one is based on four silicon pads and allows monitoring of the neutron beammore » flux as a function of the neutron energy. The second one, in beam and based on position sensitive silicon detectors, is intended for the reconstruction of the beam profile, again as a function of the neutron energy. Several electronic setups have been explored in order to overcome the issues related to the gamma flash, namely, a huge pulse present at the start of each neutron bunch which may blind the detectors for some time. The two devices were characterized with radioactive sources and also tested at the n-TOF facility at CERN. The wide energy and intensity range they proved capable of sustaining made them attractive and suitable to be used in both EAR1 and EAR2 n-TOF experimental areas, where they became immediately operational.« less

Improved design and in-situ measurements of new beam position monitors for Indus-2

NASA Astrophysics Data System (ADS)

Kumar, M.; Babbar, L. K.; Holikatti, A. C.; Yadav, S.; Tyagi, Y.; Puntambekar, T. A.; Senecha, V. K.

2018-01-01

Beam position monitors (BPM) are important diagnostic devices used in particle accelerators to monitor position of the beam for various applications. Improved version of button electrode BPM has been designed using CST Studio Suite for Indus-2 ring. The new BPMs are designed to replace old BPMs which were designed and installed more than 12 years back. The improved BPMs have higher transfer impedance, resonance free output signal, equal sensitivity in horizontal and vertical planes and fast decaying wakefield as compared to old BPMs. The new BPMs have been calibrated using coaxial wire method. Measurement of transfer impedance and time domain signals has also been performed in-situ with electron beam during Indus-2 operation. The calibration and beam based measurements results showed close agreement with the design parameters. This paper presents design, electromagnetic simulations, calibration result and in-situ beam based measurements of newly designed BPMs.

Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

PubMed Central

Jeon, Jin-Woo; Choi, Wonsuk; Shin, Young-Gwan; Ji, Suk-Young

2018-01-01

In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO) thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively. PMID:29601515

Positron Beam Characteristics at NEPOMUC Upgrade

NASA Astrophysics Data System (ADS)

Hugenschmidt, C.; Ceeh, H.; Gigl, T.; Lippert, F.; Piochacz, C.; Reiner, M.; Schreckenbach, K.; Vohburger, S.; Weber, J.; Zimnik, S.

2014-04-01

In 2012, the new neutron induced positron source NEPOMUC upgrade was put into operation at FRMII. Major changes have been made to the source which consists of a neutron-γ-converter out of Cd and a Pt foil structure for electron positron pair production and positron moderation. The new design leads to an improvement of both intensity and brightness of the mono-energetic positron beam. In addition, the application of highly enriched 113Cd as neutron-γ-converter extends the lifetime of the positron source to 25 years. A new switching and remoderation device has been installed in order to allow toggling from the high-intensity primary beam to a brightness enhanced remoderated positron beam. At present, an intensity of more than 109 moderated positrons per second is achieved at NEPOMUC upgrade. The main characteristics are presented which comprise positron yield and beam profile of both the primary and the remoderated positron beam.

Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

NASA Astrophysics Data System (ADS)

Keswani, Neeti; Nakajima, Yoshikata; Chauhan, Neha; Kumar, Sakthi; Ohno, H.; Das, Pintu

2018-05-01

In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

Backscattered electron simulations to evaluate sensitivity against electron dosage of buried semiconductor features

NASA Astrophysics Data System (ADS)

Mukhtar, Maseeh; Thiel, Bradley

2018-03-01

In fabrication, overlay measurements of semiconductor device patterns have conventionally been performed using optical methods. Beginning with image-based techniques using box-in-box to the more recent diffraction-based overlay (DBO). Alternatively, use of SEM overlay is under consideration for in-device overlay. Two main application spaces are measurement features from multiple mask levels on the same surface and buried features. Modern CD-SEMs are adept at measuring overlay for cases where all features are on the surface. In order to measure overlay of buried features, HV-SEM is needed. Gate-to-fin and BEOL overlay are important use cases for this technique. A JMONSEL simulation exercise was performed for these two cases using 10 nm line/space gratings of graduated increase in depth of burial. Backscattered energy loss results of these simulations were used to calculate the sensitivity measurements of buried features versus electron dosage for an array of electron beam voltages.

Non-metal spintronics: study of spin-dependent transport in InSb- and InAs-based nanopatterned heterostructures

NASA Astrophysics Data System (ADS)

Heremans, J. J.; Chen, Hong; Peters, J. A.; Goel, N.; Chung, S. J.; Santos, M. B.; van Roy, W.; Borghs, G.

2006-03-01

Spin-orbit interaction in semiconductor heterostructures can lead to various spin-dependent electronic transport effects without the presence of magnetic materials. Mesoscopic samples were fabricated on InSb/InAlSb and InAs/AlGaSb two-dimensional electron systems, where spin-orbit interaction is strong. In mesoscopic devices, the effects of spin-orbit interaction are not averaged out over the geometry, and lead to observable electronic properties. We experimentally demonstrate spin-split ballistic transport and the creation of fully spin-polarized electron beams using spin-dependent reflection geometries and transverse magnetic focusing geometries. Spin-dependent transport properties in the semiconductor materials are also investigated using antidot lattices. Spin-orbit interaction effects in high-mobility semiconductor devices may be utilized toward the design of novel spintronics implementations. We acknowledge NSF DMR-0094055 (JJH), DMR-0080054, DMR-0209371 (MBS).

Surface-enhanced Raman scattering active gold nanoparticle/nanohole arrays fabricated through electron beam lithography

NASA Astrophysics Data System (ADS)

Wu, Tsunghsueh; Lin, Yang-Wei

2018-03-01

Effective surface-enhanced Raman scattering (SERS)-active substrates from gold nanoparticle and gold nanohole arrays were successfully fabricated through electron beam lithography with precise computer-aided control of the unit size and intergap distance. Their SERS performance was evaluated using 4-mercaptobenzoic acid (4-MBA). These gold arrays yielded strong SERS signals under 785 nm laser excitation. The enhancement factors for 4-MBA molecules on the prepared gold nanoparticle and nanohole arrays maxed at 1.08 × 107 and 8.61 × 106, respectively. The observed increase in SERS enhancement was attributed to the localized surface plasmon resonance (LSPR) wavelength shifting toward the near-infrared regime when the gold nanohole diameter increased, in agreement with the theoretical prediction in this study. The contribution of LSPR to the Raman enhancement from nanohole arrays deposited on fluorine-doped tin oxide glass was elucidated by comparing SERS and transmission spectra. This simple fabrication procedure, which entails employing electron beam lithography and the controllability of the intergap distance, suggests highly promising uses of nanohole arrays as functional components in sensing and photonic devices.

Non-Uniform Cathode Emission Studies of a MIG Gun

NASA Astrophysics Data System (ADS)

Marchewka, C. D.; Shapiro, M. A.; Sirigiri, J. R.; Temkin, R. J.

2004-11-01

We present the initial results of the modeling of the effect of emission non-uniformity in 96 kV, 40 A Magnetron Injection Gun (MIG) of a 1.5 MW 110 GHz gyrotron using a 3D gun simulation code. The azimuthal emission nonuniformity can lead to increased mode competition and an overall decreased efficiency of the device [1]. The electron beam is modeled from the cathode to a downstream position where the velocity spread saturates using the AMAZE 3D suite of codes. After bench marking the results of the 3D code with 2D codes such as TRAK2D and EGUN, the emitter was modified to simulate asymmetric emission from the cathode to gain an understanding into the effects of inhomogeneous beam current density on the velocity spread and pitch factor of the electron beam. [1] G. S. Nusinovich, A.N. Vlasov, M. Botton, T. M. Antonsen, Jr., S. Cauffman, K. Felch, ``Effect of the azimuthal inhomogeneity of electron emission on gyrotron operation,'' Phys. Plasmas, vol. 8, no. 7, pp. 3473-3479, 2001

Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires.

PubMed

Donatini, F; de Luna Bugallo, Andres; Tchoulfian, Pierre; Chicot, Gauthier; Sartel, Corinne; Sallet, Vincent; Pernot, Julien

2016-05-11

Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the electric field and determine the exciton diffusion length in NW by using an electron beam as the single excitation source. This approach is performed on numerous single ZnO NW Schottky diodes whose NW radius vary from 42.5 to 175 nm. The dominant impact of the surface on the NW properties is revealed through the comparison of three different physical quantities recorded on the same NW: electron-beam induced current, cathodoluminescence, and secondary electron signal. Indeed, the space charge region near the Schottky contact exhibits an unusual linear variation with reverse bias whatever the NW radius. On the contrary, the exciton diffusion length is shown to be controlled by the NW radius through surface recombination. This systematic comparison performed on a single ZnO NW demonstrates the power of these complementary techniques in understanding NW properties.