Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

GSM-PKI solution enabling secure mobile communications.

PubMed

Jelekäinen, Pekka

2004-03-31

Because of its wide distribution and ease of use, the mobile phone, as a reliable personal communications channel, offers an excellent basis for the provision of reliable electronic communications services. In Finland, ca. 75% of the citizens have a mobile phone and, at present and most likely also in the future, it is the most widely spread service channel allowing reliable electronic communications. Despite the restricted functions of the mobile phone, the citizens can use the phone also as a communications medium. In 2001, the Finns sent over 1 billion SMS messages. In Finland, TeliaSonera Finland Oyi and the Population Register Centre (PRC) have closed a co-operation agreement with the aim of creating a mobile phone service for the electronic identification of a person. The co-operation launched is a significant development project from the perspective of the citizens. As a result, the consumers will have a new alternative for reliable electronic communications and commerce in data networks in addition to the electronic identification card. In the future, it will be possible to use the services of both public administration and the private sector by means of a mobile phone more reliably than before, without a physical visit, e.g. to a health centre or to another provider of healthcare services. The possibility of identification and signature by a mobile phone allows an easier provision of versatile services irrespective of time and place, because, in addition to voice, text message, and WAP functions, the service can be utilised also in communications services through the Internet, in which case, the mobile phone acts like a card reader. From the perspective of reliable personal mobile communications, the healthcare sector is one of the most significant and challenging application areas.

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

NASA Astrophysics Data System (ADS)

Sugiyama, Hiroki; Kosugi, Toshihiko; Yokoyama, Haruki; Murata, Koichi; Yamane, Yasuro; Tokumitsu, Masami; Enoki, Takatomo

2008-04-01

This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on- and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ( fT) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

NASA Astrophysics Data System (ADS)

Ghosh, Krishnendu; Singisetti, Uttam

2017-11-01

This work reports an investigation of electron transport in monoclinic \\beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective plasmon oscillations and Boltzmann theory based transport calculations. The strong entanglement of the plasmon with the different longitudinal optical (LO) modes make the role LO-plasmon coupling crucial for transport. The electron density dependence of the electron mobility in \\beta-Ga2O3 is studied in bulk material form and also in the form of two-dimensional electron gas. Under high electron density a bulk mobility of 182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility is about 418 cm2/V.s when remote impurities are present at the interface and improves further as the remote impurity center moves away from the interface. The trend of the electron mobility shows promise for realizing high electron mobility in dopant isolated electron channels. The experimentally observed small anisotropy in mobility is traced through a transient Monte Carlo simulation. It is found that the anisotropy of the IR active phonon modes is responsible for giving rise to the anisotropy in low-field electron mobility.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

A Planar Hall Thruster for Investigating Electron Mobility in ExB Devices (Preprint)

DTIC Science & Technology

2007-08-24

Hall thruster that emits and collects the Hall current across a planar discharge channel is described. The planar Hall thruster (PHT) is being investigated for use as a test bed to study electron mobility in ExB devices. The planar geometry attempts to de-couple the complex electron motion found in annular thrusters by using simplified geometry. During this initial test, the PHT was operated at discharge voltages between 50-150 V to verify operability and stability of the device. Hall current was emitted by hollow cathode electron sources and

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Rylene and related diimides for organic electronics.

PubMed

Zhan, Xiaowei; Facchetti, Antonio; Barlow, Stephen; Marks, Tobin J; Ratner, Mark A; Wasielewski, Michael R; Marder, Seth R

2011-01-11

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.

Heterocyclic Acene-Diketopyrrolopyrrole Molecular Semiconductors for Efficient Solution-Processed Organic Solar Cells

NASA Astrophysics Data System (ADS)

Loser, Stephen C.

(Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to their wide bandgaps. Both metal- and N-polar AlGaN/GaN high-electron-mobility transistors (HEMTs) demonstrated excellent performances as high-frequency signal amplifiers. While the majority of today's III-N transistors are based on metal-polar heterostructures, N-polar materials have gained attention following the breakthrough in the deposition of high quality films. Compared to their metal-polar counterparts, N-polar HEMT structures improve the scalability of devices, increase the electron confinement and reduce contact resistance, exhibiting great potentials in high-frequency device fabrications. In order to suppress alloy scattering in the HEMT structures, a thin AlN interlayer is usually introduced between the AlGaN barrier and the GaN channel. However, a significant amount of unintentional Ga incorporation was observed in AlN films grown by metal-organic chemical vapor deposition (MOCVD), one of the major techniques to produce the HEMT epi structures. In the first part of my thesis, the impact of impure AlN interlayers on HEMTs was examined, explaining the significant improvement in electron mobility despite of the high Ga concentration of ˜ 50%. Moreover, both metal-polar and N-polar AlN films grown by MOCVD under various conditions were investigated, the results of which indicated that the major source of unintentional Ga was the former Ga deposition on the susceptor in the same run. It was also observed that N-polar AlN films contained less Ga compared to metal-polar ones when they were grown under same conditions. Methods to suppress the Ga were also discussed. In addition, the morphological and electrical properties of the GaN/AlN/GaN heterostructures with AlN films grown under different conditions were analyzed by atomic force microscopy (AFM) and room temperature Van der Pauw hall measurement. Following the study of AlN interlayers in the HEMT structures, the development of N-polar HEMT epitaxial structures with highly-scaled channel thicknesses was discussed in detail. Small channel thickness is critical to prevent short channel effects when scaling down the lateral size of N-polar HEMT devices. By modifying the Si doping level in the back-barrier and the Al composition of the AlGaN cap, the channel thickness of the conventional N-polar HEMT structure with pure GaN channel was successfully scaled down to 8 nm. To further reduce the channel thickness, a thin InGaN layer was introduced between the channel and the AlGaN cap, leading to a decrease of the electric field in the channel and an increase of the distance between the centroid of the 2DEG and the AlN/GaN interface, which suppressed the scattering at the interface and significantly improved the electron mobility. The sheet charge density also increased due to the net positive polarization charge at the GaN/InGaN interface. The design was demonstrated by MOCVD. An increase of 73% in electron mobility from 606 to 1141 cm2/(V˙s) was observed when the 6 nm thick pure GaN channel was replaced by a 4 nm GaN / 2 nm In0.1Ga0.9N composite channel. The smallest applicable channel thickness was decreased to 4 nm with the composite channel design.

Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by the probe-electron-beam-induced current technique.

PubMed

Watanabe, Kentaro; Nokuo, Takeshi; Chen, Jun; Sekiguchi, Takashi

2014-04-01

We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al(0.48)In(0.52)As/i-Ga(0.30)In(0.70)As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Scaling Projections for Sb-based p-channel FETs

DTIC Science & Technology

2010-01-01

the products of long-standing programs on antimonide growth by molecular beam epitaxy at the QinetiQ Corp. (for InSb) and at the Naval Research...electron mobilities in the channels of III–V HEMTs at room temperature are much higher than in Si or Ge, e.g., in InAs they are in the range of 20–30,000 cm2... HEMT structures. IEEE Trans Electron Dev 1985;32:11. [25] Awano Y, Kosugi M, Kosemura K, Mimura T, Abe M. Short-channel effects in subquarter

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures

NASA Astrophysics Data System (ADS)

Pokatilov, E. P.; Nika, D. L.; Askerov, A. S.; Zincenco, N. D.; Balandin, A. A.

2007-12-01

nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of the size-quantized excited electron subbands and the Fermi energy becomes comparable to the optical phonon energy. The latter leads to the oscillatory dependence of the electron mobility on the thickness of the heterostructure conduction channel layer. This effect is observable at room temperature and over a wide range of the carrier densities. The developed formalism and calculation procedure are readily applicable to other material systems. The described effect can be used for fine-tuning the confined electron and phonon states in the nanoscale heterostructures in order to achieve performance enhancement of the nanoscale electronic and optoelectronic devices.

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

NASA Technical Reports Server (NTRS)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

75 FR 8725 - Agency Forms Undergoing Paperwork Reduction Act Review

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-25

.... Proposed Project CDC Web site and Communication Channels Usability Evaluation, (OMB no. 0925-0735, exp. 3/31/2010)--Revision--National Center for Health Marketing (NCHM), Centers for Disease Control and..., mobile-based or other electronic communication channels hosting CDC content on an ongoing basis. It is...

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

NASA Astrophysics Data System (ADS)

Xie, J.; Leach, J. H.; Ni, X.; Wu, M.; Shimada, R.; Özgür, Ü.; Morkoç, H.

2007-12-01

InGaN possesses higher electron mobility and velocity than GaN, and therefore is expected to lead to relatively better performances for heterostructure field effect transistors (HFETs). However, the reported mobilities for AlGaN /InGaN HFETs are lower than GaN channel HFETs. To address this issue, we studied the effect of different barriers on the Hall mobility for InGaN channel HFETs grown by metal organic chemical vapor deposition. Unlike the conventional AlGaN barrier, the AlInN barrier can be grown at the same temperature as the InGaN channel layer, alleviating some of the technological roadblocks. Specifically, this avoids possible degradation of the thin InGaN channel during AlGaN growth at high temperatures; and paves the way for better interfaces. An undoped In0.18Al0.82N/AlN/In0.04Ga0.96N HFET structure exhibited a μH=820cm2/Vs, with a ns=2.12×1013cm-2 at room temperature. Moreover, with an In-doped AlGaN barrier, namely, Al0.24In0.01Ga0.75N, grown at 900°C, the μH increased to 1230cm2/Vs with a ns of 1.09×1013cm-2 for a similar InGaN channel. Furthermore, when the barrier was replaced by Al0.25Ga0.75N grown at 1030°C, μH dropped to 870cm2/Vs with ns of 1.26×1013cm-2 at room temperature. Our results suggest that to fully realize the potential of the InGaN channel HFETs, AlInN or AlInGaN should be used as the barrier instead of the conventional AlGaN barrier.

Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

2016-04-01

In strained high-electron-mobility transistors (HEMTs) with InAs as the channel, excess electrons and holes are generated in the drain region by impact ionization. In the source region, electrons are injected to recombine with accumulated holes by the Auger process. This causes the shift of the gate potential, V GS,shift, for HEMTs. For a system where electrons and holes coexist, we established a theory taking into account the nonparabolicity of the conduction band in the InAs channel. This theory enables us to rigorously determine not only the energy states and the concentration profiles for both carriers but also the V GS,shift due to an accumulation of holes. We have derived the Auger recombination theory which takes into account the Fermi-Dirac statistics and is applicable to an arbitrary shape of potential energy. The Auger recombination lifetime τA for InAs-PHEMTs was estimated as a function of the sheet hole concentration, p s, and τA was on the order of psec for p s exceeding 1012 cm-2.

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

NASA Astrophysics Data System (ADS)

Toriumi, Akira; Nishimura, Tomonori

2018-01-01

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is expected. This size scaling will end sooner or later, however, because the typical size is approaching the atomic distance level in crystalline Si. In addition, it is said that electron transport in FETs is ballistic or nearly ballistic, which means that the injection velocity at the virtual source is a physical parameter relevant for estimating the driving current. Channel-materials with higher carrier mobility than Si are nonetheless needed, and the carrier mobility in the channels is a parameter important with regard to increasing the injection velocity. Although the density of states in the channel has not been discussed often, it too is relevant for estimating the channel current. Both the mobility and the density of states are in principle related to the effective mass of the carrier. From this device physics viewpoint, we expect germanium (Ge) CMOS to be promising for scaling beyond the Si CMOS limit because the bulk mobility values of electrons and holes in Ge are much higher than those of electrons and holes in Si, and the electron effective mass in Ge is not much less than that in III-V compounds. There is a debate that Ge should be used for p-MOSFETs and III-V compounds for n-MOSFETs, but considering that the variability or nonuniformity of the FET performance in today’s CMOS LSIs is a big challenge, it seems that much more attention should be paid to the simplicity of the material design and of the processing steps. Nevertheless, Ge faces a number of challenges even in case that only the FET level is concerned. One of the big problems with Ge CMOS technology has been its poor performance in n-MOSFETs. While the hole mobility in p-FETs has been improved, the electron mobility in the inversion layer of Ge FETs remains a serious concern. If this is due to the inherent properties of Ge, only p-MOSFETs might be used for device applications. To make Ge CMOS devices practically viable, we need to understand why electron mobility is severely degraded in the inversion layer in Ge n-channel MOSFETs and to find out how it can be increased. In the Si CMOS technology, the SiO2/Si interface has long been investigated and cannot be ignored even after the introduction of high-k gate stack technology. In that sense, the GeO2/Ge interface should be intensively studied to make the best of Ge’s advantages. Therefore we first discuss the GeO2/Ge interface with regard to its physical and electrical characteristics. When we regard Ge as a channel material beyond Si for high performance ULSIs, we also have to seriously consider the gate stack scalability and reliability. The source/drain engineering, as well as the gate stack formation, is another challenge in Ge MOSFET design. Both the higher metal/Ge contact resistance and the larger p/n junction leakage current may be the consequences of Ge’s intrinsic properties because they are derived from the strong Fermi-level pinning and the narrow energy band gap, respectively. Even if the carrier transport in the channel may be ideally ballistic, these properties should degrade FET properties. The narrower energy band gap of Ge is often addressed, but the higher dielectric constant of Ge is rarely discussed. This is also the case for most of the other high-mobility materials. The dielectric constant is directly and negatively related to short-channel effects, and we have not been able to provide a substantial solution to overcome this hardship. We have to keep this in mind for the short-channel FET operation. Although a number of problems remain to be solved, in this paper, we view the current status of Ge FET technology positively. A number of (but not all) Ge-related challenges have been overcome in the past 10 years, which seems to be a good time to summarize the status of Ge technology, particularly materials engineering aspects rather than device integration issues. Since we cannot cover all of the results published to date, we mainly discuss fundamental aspects based on our experimental results. Remaining challenges are also addressed but not comprehensively. Integration issues are not discussed in this review. Finally, new types of electron devices utilizing Ge’s advantages are briefly introduced on the basis of our experimental results.

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

PubMed

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil

NASA Astrophysics Data System (ADS)

Kuo, Po-Chin; Jamshidi-Roudbari, Abbas; Hatalis, Miltiadis

2007-12-01

The effect of uniaxial tensile strain parallel to the channel on mobility of polycrystalline silicon thin-film transistors (TFTs) on stainless steel foil has been investigated. The electron mobility increases by 20% while the hole mobility decreases by 6% as the strain increases to 0.5%, and both followed by saturation as the strain increases further. The off current decreases for both types of TFTs under strain. All TFTs remained functional at the applied strain of 1.13%.

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary.

PubMed

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS 2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS 2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS 2 .

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary

NASA Astrophysics Data System (ADS)

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS2.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

NASA Astrophysics Data System (ADS)

Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

2017-07-01

In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

The role of AlGaN buffers and channel thickness in the electronic transport properties of Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amirabbasi, M., E-mail: mo.amirabbasi@gmail.com

We try to theoretically analyze the reported experimental data of the Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35–300 K. Our results show that inserting a 1.1 μm thick Al{sub 0.04}Ga{sub 0.96}N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, themore » electron mobility increases from 2200 to 2540 cm{sup 2}/(V s) and from 870 to 1000 cm{sup 2}/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al{sub 0.04}Ga{sub 0.96}N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.« less

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

NASA Astrophysics Data System (ADS)

Bonno, Olivier; Barraud, Sylvain; Mariolle, Denis; Andrieu, François

2008-03-01

Recently, in order to explain the long-channel electron effective mobility at a high sheet carrier density in strained silicon channel transistors, it has been suggested by [M. V. Fischetti, F. Gamiz, and W. Hansch, J. Appl. Phys. 92, 7230 (2002)] that biaxial tensile strain should smooth the Si/SiO2 interface. To address this topic, the roughness properties of biaxial strained silicon-on-insulator (s-SOI) films are investigated by means of atomic force microscopy. Through in-depth statistical analysis of the digitalized surface profiles, the roughness parameters are extracted for unstrained and strained SOI films, with 0.8% biaxial tensile strain. Especially, it is found that strain significantly reduces the roughness amplitude. Then, mobility calculations in SOI and s-SOI inversion layers are performed in the framework of the Kubo-Greenwood formalism. The model accounts for the main scattering mechanisms that are dominant in the high electron density range, namely phonon and surface roughness. Special attention has been paid to the modeling of the latter by accounting for all the contributions of the potential which arise from the deformed rough interface, and by using a multisubband wavelength-dependent screening model. This model is then applied to study the influence of the surface morphology on the mobility in s-SOI inversion layers. In this context, the mobility gain between s-SOI and unstrained SOI layers is found to agree significantly better with experimental data if the strain-induced decrease of the roughness amplitude is taken into account.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

NASA Astrophysics Data System (ADS)

Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu

2018-01-01

We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm2 V-1 s-1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

NASA Astrophysics Data System (ADS)

Leach, J. H.; Wu, M.; Morkoç, H.; Liberis, J.; Šermukšnis, E.; Ramonas, M.; Matulionis, A.

2011-11-01

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total charge in the channel (the electron sheet density) but rather the electron density profile. This is demonstrated by comparing two structures with equal sheet densities (1 × 1013 cm-2), but with different density profiles. The camelback channel profile exhibits a shorter hot-phonon lifetime of ˜270 fs as compared with ˜500 fs reported for a standard Al0.33Ga0.67N/AlN/GaN channel at low supplied power levels. When supplied power is sufficient to heat the electrons > 600 K, ultrafast decay of hot phonons is observed in the case of the composite channel structure. In this case, the electron density profile spreads to form a camelback profile, and hot-phonon lifetime reduces to ˜50 fs.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Hall Thruster With an External Acceleration Zone

DTIC Science & Technology

2005-09-14

Hall Thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and cross-field (along the electron Hall current direction) velocities were measured. The results presented here, combined with those of previous work, highlight the high sensitivity of electron mobility inside and outside the channel, depending on the background gas density, type of wall

Ion Velocity Measurements in a Linear Hall Thruster (Postprint)

DTIC Science & Technology

2005-06-14

Hall Thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and cross-field (along the electron Hall current direction) velocities were measured. The results presented here, combined with those of previous work, highlight the high sensitivity of electron mobility inside and outside the channel, depending on the background gas density, type of wall

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Charge-transfer mobility and electrical conductivity of PANI as conjugated organic semiconductors

NASA Astrophysics Data System (ADS)

Zhang, Yahong; Duan, Yuping; Song, Lulu; Zheng, Daoyuan; Zhang, Mingxing; Zhao, Guangjiu

2017-09-01

The intramolecular charge transfer properties of a phenyl-end-capped aniline tetramer (ANIH) and a chloro-substituted derivative (ANICl) as organic semiconductors were theoretically studied through the first-principles calculation based on the Marcus-Hush theory. The reorganization energies, intermolecular electronic couplings, angular resolution anisotropic mobilities, and density of states of the two crystals were evaluated. The calculated results demonstrate that both ANIH and ANICl crystals show the higher electron transfer mobilities than the hole-transfer mobilities, which means that the two crystals should prefer to function as n-type organic semiconductors. Furthermore, the angle dependence mobilities of the two crystals show remarkable anisotropic character. The maximum mobility μmax of ANIH and ANICl crystals is 1.3893 and 0.0272 cm2 V-1 s-1, which appear at the orientation angles near 176°/356° and 119°/299° of a conducting channel on the a-b reference plane. It is synthetically evaluated that the ANIH crystal possesses relatively lower reorganization energy, higher electronic coupling, and electron transfer mobility, which means that the ANIH crystal may be the more ideal candidate as a high performance n-type organic semiconductor material. The systematic theoretical studies on organic crystals should be conducive to evaluating the charge-transport properties and designing higher performance organic semiconductor materials.

Charge-transfer mobility and electrical conductivity of PANI as conjugated organic semiconductors.

PubMed

Zhang, Yahong; Duan, Yuping; Song, Lulu; Zheng, Daoyuan; Zhang, Mingxing; Zhao, Guangjiu

2017-09-21

The intramolecular charge transfer properties of a phenyl-end-capped aniline tetramer (ANIH) and a chloro-substituted derivative (ANICl) as organic semiconductors were theoretically studied through the first-principles calculation based on the Marcus-Hush theory. The reorganization energies, intermolecular electronic couplings, angular resolution anisotropic mobilities, and density of states of the two crystals were evaluated. The calculated results demonstrate that both ANIH and ANICl crystals show the higher electron transfer mobilities than the hole-transfer mobilities, which means that the two crystals should prefer to function as n-type organic semiconductors. Furthermore, the angle dependence mobilities of the two crystals show remarkable anisotropic character. The maximum mobility μ max of ANIH and ANICl crystals is 1.3893 and 0.0272 cm 2 V -1 s -1 , which appear at the orientation angles near 176°/356° and 119°/299° of a conducting channel on the a-b reference plane. It is synthetically evaluated that the ANIH crystal possesses relatively lower reorganization energy, higher electronic coupling, and electron transfer mobility, which means that the ANIH crystal may be the more ideal candidate as a high performance n-type organic semiconductor material. The systematic theoretical studies on organic crystals should be conducive to evaluating the charge-transport properties and designing higher performance organic semiconductor materials.

Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun

2017-04-01

We propose a model that describes the operation characteristics of a two-dimensional electron gas (2DEG) in a monolayer transition-metal dichalcogenide thin-film transistor (TFT) having trapped charges near the channel interface. We calculate the drift mobility of the carriers scattered by charged defects located in the channel or near the channel interfaces. The calculated drift mobility is a function of the 2DEG areal density of interface traps. Finally, we calculate the model transfer (ID-VG S ) and output (ID-VS D ) characteristics and verify them by comparing with the experimental results performed with monolayer MoS2 TFTs. We find the modeled results to be excellently consistent with the experiments. This proposed model can be utilized for measuring the interface-trapped charge and trap site densities from the measured transfer curves directly, avoiding more complicated and expensive measurement methods.

Enhancing Hole Mobility in III-V Semiconductors

DTIC Science & Technology

2012-05-21

acteristics of the digital superlattice (n¼1,0, andþ 1) that was used in the metamorphic buffer. The GaSb channel peak gets buried in the n¼ 0...materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other...hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Improved performance of InSe field-effect transistors by channel encapsulation

NASA Astrophysics Data System (ADS)

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

2018-06-01

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

2018-04-01

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE PAGES

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; ...

2018-06-04

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

Nitrogen-related effects on low-temperature electronic properties of two-dimensional electron gas in very dilute nitride GaNxAs1-x/AlGaAs (x = 0 and 0.08%) modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Mootabian, Mahnaz; Eshghi, Hosein

2013-07-01

The low-temperature (4 K) two-dimensional (2D) electron gas mobility data versus carrier concentration in the modulation-doped dilute nitride GaAs1-xNx/Al0.3Ga0.7As (x = 0 and 0.08%) heterostructures are analyzed. Theoretical analysis is based on Fermi-Dirac statistics for the occupation of the quantum confined electronic states in the triangular quantum wells and the width of the quantum well versus 2D concentration. In addition, the mobility analysis is based on Matthiessen's rule for various scattering mechanisms. We found that the N-related neutral cluster alloy scattering together with crystal dislocations created at the interface strongly affects the electrons' mobility in the N-contained channel sample. We also found that as the electron concentration in the well increases from ˜1 × 1011 to 3.5 × 1011 cm-2 the carriers mainly occupy the first subband, tending to remain closer and closer to the hetero-interface.

Electron Transporting Semiconductor Dielectric Intramolecular

DTIC Science & Technology

2012-04-27

gate dielectric, and the capacitance times mobility was 80 nS/V (10x typical pentacene /oxide), stable to heating to 70 °C in air. Remarkably...oxide/ Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar and Nonvolatile Devices” Adv. Funct. Mater. 18, 1832-1839 (2008) Sun, J...case of layered OSC OFETs. This proposal is somewhat different from a model by deLeeuw for amorphous OFETs13 in which carriers would be locally

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-01-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Astrophysics Data System (ADS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-06-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

NASA Astrophysics Data System (ADS)

Dupré, C.; Ernst, T.; Hartmann, J.-M.; Andrieu, F.; Barnes, J.-P.; Rivallin, P.; Faynot, O.; Deleonibus, S.; Fazzini, P. F.; Claverie, A.; Cristoloveanu, S.; Ghibaudo, G.; Cristiano, F.

2007-11-01

Based on electrical measurements and transmission electron microscopy (TEM) imaging, we propose an explanation for the electron and hole mobility degradation with gate length reduction in metal-oxide-semiconductor field effect transistors (MOSFETs). We demonstrate that ion implantation, normally used for source/drain doping, is responsible for transport degradation for short-channel devices. Implantation impact on electrons and holes mobility was investigated both on silicon-on-insulator (SOI) and tensile strained silicon-on-insulator (sSOI) substrates. Wafers with ultrathin Si films (from 8 to 35 nm) were Ge implanted at 3 keV and various concentrations (from 5×1014 to 2×1015 atoms cm-2), then annealed at 600 °C for 1 h. Secondary ion mass spectrometry enabled us to quantify the Ge-implanted atoms concentrations. The end-of-range defects impact on mobility was investigated with the pseudo-MOSFET technique. Measurements showed a mobility decrease as the implantation dose increased. We demonstrated that sSOI mobility is more sensitive to implantation than SOI mobility, without any implantation-induced strain relaxation in sSOI (checked using the ultraviolet Raman technique). A 36% (25%) holes (electrons) mobility degradation was measured for sSOI, while SOI presented a 21% mobility degradation for holes and 5% for electrons. Finally, the electrical results were compared with morphological studies. Plan-view TEM showed the presence of interstitial defects formed during ion implantation and annealing. The defect density was estimated to be two times higher in sSOI than in SOI, which is in full agreement with electrical results mentioned before. The results are relevant for the optimization of the source and drain regions of advanced nanoscale SOI and sSOI transistors.

Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Martins, R.; Barquinha, P.; Ferreira, I.; Pereira, L.; Gonçalves, G.; Fortunato, E.

2007-02-01

The role of order and disorder on the electronic performances of n-type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition process and/or by adding other metal ions to the matrix. In this case, we make the oxide matrix less sensitive to the presence of oxygen, widening the range of oxygen partial pressures that can be used and thus improving the process control of the film resistivity. The results obtained in fully transparent TFT using polycrystalline ZnO or amorphous indium zinc oxide (IZO) as channel layers and highly conductive poly/nanocrystalline ZGO films or amorphous IZO as drain/source layers show that both devices work in the enhancement mode, but the TFT with the highest electronic saturation mobility and on/off ratio 49.9cm2/Vs and 4.3×108, respectively, are the ones in which the active and passive layers are amorphous. The ZnO TFT whose channel is based on polycrystalline ZnO, the mobility and on/off ratio are, respectively, 26cm2/Vs and 3×106. This behavior is attributed to the fact that the electronic transport is governed by the s-like metal cation conduction bands, not significantly affected by any type of angular disorder promoted by the 2p O states related to the valence band, or small amounts of incorporated metal impurities that lead to a better control of vacancies and of the TFT off current.

A security scheme of SMS system

NASA Astrophysics Data System (ADS)

Zhang, Fangzhou; Yang, Hong-Wei; Song, Chuck

2005-02-01

With the prosperous development and the use of SMS, more and more important information need to be transferred through the wireless and mobile networks by the users. But in the GSM/GPRS network, the SMS messages are transferred in text mode through the signaling channel and there is no integrality for SMS messages. Because of the speciality of the mobile communications, the security of signaling channel is very weak. So we need to improve and enhance the security and integrality of SMS. At present, developed investigation based on SMS security is still incomplete. The key distribution and management is not perfect to meet the usability in a wide area. This paper introduces a high-level security method to solve this problem. We design the Secure SMS of GSM/GPRS in order to improve the security of the important information that need to be transferred by the mobile networks. Using this method, we can improve the usability of E-payment and other mobile electronic commerce.

Control Channel Vulnerability Analysis of the Institute of Electrical and Electronics Engineers 802.16m-2011 and 802.16- 2009 Standards

DTIC Science & Technology

2012-09-01

scheduler to adapt its uplink and downlink assignments to channel conditions. Sleep mode is used by the MS to minimize power drain and radio...is addressed in one resource unit, while for multi-user (MU) schemes , multiple users can be scheduled in one resource unit. Open-loop techniques...17  7.  Mobility and Power Management ......................................... 18  8.  Scheduling Services

Centimetre-scale electron diffusion in photoactive organic heterostructures

NASA Astrophysics Data System (ADS)

Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

2018-02-01

The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Dramatic inversion of charge polarity in diketopyrrolopyrrole-based organic field-effect transistors via a simple nitrile group substitution.

PubMed

Yun, Hui-Jun; Kang, Seok-Ju; Xu, Yong; Kim, Seul Ong; Kim, Yun-Hi; Noh, Yong-Young; Kwon, Soon-Ki

2014-11-19

A record-breaking high electron mobility of 7.0 cm(2) V(-1) s(-1) for n-channel polymer OFETs is reported. By the incorporation of only one nitrile group as an electron-withdrawing function in the vinyl linkage of the DPP-based copolymer, a dramatic inversion of majority charge-carriers from holes to electrons is achieved. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo S.; Ishikawa, Yasuaki; Fujii, Mami N.; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-03-01

We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.

Channel length dependence of field-effect mobility of c-axis-aligned crystalline In-Ga-Zn-O field-effect transistors

NASA Astrophysics Data System (ADS)

Matsuda, Shinpei; Kikuchi, Erumu; Yamane, Yasumasa; Okazaki, Yutaka; Yamazaki, Shunpei

2015-04-01

Field-effect transistors (FETs) with c-axis-aligned crystalline In-Ga-Zn-O (CAAC-IGZO) active layers have extremely low off-state leakage current. Exploiting this feature, we investigated the application of CAAC-IGZO FETs to LSI memories. A high on-state current is required for the high-speed operation of these LSI memories. The field-effect mobility μFE of a CAAC-IGZO FET is relatively low compared with the electron mobility of single-crystal Si (sc-Si). In this study, we measured and calculated the channel length L dependence of μFE for CAAC-IGZO and sc-Si FETs. For CAAC-IGZO FETs, μFE remains almost constant, particularly when L is longer than 0.3 µm, whereas that of sc-Si FETs decreases markedly as L shortens. Thus, the μFE difference between both FET types is reduced by miniaturization. This difference in μFE behavior is attributed to the different susceptibilities of electrons to phonon scattering. On the basis of this result and the extremely low off-state leakage current of CAAC-IGZO FETs, we expect high-speed LSI memories with low power consumption.

Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

NASA Astrophysics Data System (ADS)

Yaglioglu, Burag

Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

FAST TRACK COMMUNICATION High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Xia, D. X.; Xu, J. B.

2010-11-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm2 V-1 s-1 and 2.1 cm2 V-1 s-1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics.

Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport

NASA Astrophysics Data System (ADS)

Long, Gen; Xu, Shuigang; Shen, Junying; Hou, Jianqiang; Wu, Zefei; Han, Tianyi; Lin, Jiangxiazi; Wong, Wing Ki; Cai, Yuan; Lortz, Rolf; Wang, Ning

2016-09-01

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 cm2 V-1 s-1 and 8400 cm2 V-1 s-1 are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70more » μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.« less

Large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

Observation of cyclotron resonance and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu 0.02Bi 2Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Liang; Tse, Wang-Kong; Morris, C. M.

2015-02-05

We have utilized magneto-optical time-domain spectroscopy to investigate the low frequency optical response of topological insulator Cu 0.02Bi 2Se 3 and Bi 2Se 3 films. With both field and frequency depedence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both samples. The small amount of Cu substitution into the Cu 0.02Bi 2Se 3 induces a true bulk insulator with only a single conduction channel with total sheet carrier density 4.9 x 10 12/cm 2 and mobility as large as 4000 cm 2/V s. Thismore » is consistent with pure topological surface state (TSSs) conduction with a chemical potential 150 meV above the Dirac point. Hence, a true topological insulator with an insulating bulk is realized. The CR broadens at high fields, an e ect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis on the zero field data. In contrast to Cu 0.02Bi 2Se 3, two charge channels were observed in normal Bi 2Se 3 films. We demonstrate a method to distinguish between the dominant TSSs and trivial bulk/2DEG states. The dominant channel exhibits a CR with a carrier density of ~2.0 x 10 13/cm 2 and mobility ~3200 cm 2/V s, consistent with TSSs with a chemical potential ~350meV above the Dirac point.« less

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors.

PubMed

Zhang, Fengjiao; Dai, Xiaojuan; Zhu, Weikun; Chung, Hyunjoong; Diao, Ying

2017-07-01

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C 8 -benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor-acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengjiao; Dai, Xiaojuan; Zhu, Weikun

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This papermore » further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.« less

Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.

PubMed

Morkötter, S; Jeon, N; Rudolph, D; Loitsch, B; Spirkoska, D; Hoffmann, E; Döblinger, M; Matich, S; Finley, J J; Lauhon, L J; Abstreiter, G; Koblmüller, G

2015-05-13

Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10(3) cm(2) V(-1) s(-1). The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >10(4)-10(5) at room temperature.

47 CFR 22.651 - 470-512 MHz channels for trunked mobile operation.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false 470-512 MHz channels for trunked mobile... CARRIER SERVICES PUBLIC MOBILE SERVICES Paging and Radiotelephone Service 470-512 Mhz Trunked Mobile Operation § 22.651 470-512 MHz channels for trunked mobile operation. The following channels are allocated...

33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

Code of Federal Regulations, 2012 CFR

2012-07-01

..., Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD... § 165.835 Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. (a) Definition. As used in this section— Cruise ship means a passenger vessel over 100 gross tons, carrying more than 12...

33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

Code of Federal Regulations, 2013 CFR

2013-07-01

..., Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD... § 165.835 Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. (a) Definition. As used in this section— Cruise ship means a passenger vessel over 100 gross tons, carrying more than 12...

33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

Code of Federal Regulations, 2014 CFR

2014-07-01

..., Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD... § 165.835 Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. (a) Definition. As used in this section— Cruise ship means a passenger vessel over 100 gross tons, carrying more than 12...

33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD... § 165.835 Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. (a) Definition. As used in this section— Cruise ship means a passenger vessel over 100 gross tons, carrying more than 12...

47 CFR 22.561 - Channels for one-way or two-way mobile operation.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Channels for one-way or two-way mobile... CARRIER SERVICES PUBLIC MOBILE SERVICES Paging and Radiotelephone Service One-Way Or Two-Way Mobile Operation § 22.561 Channels for one-way or two-way mobile operation. The following channels are allocated...

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

Wedge-Shaped GaN Nanowalls: A Potential Candidate for Two-Dimensional Electronics and Spintronics

NASA Astrophysics Data System (ADS)

Deb, Swarup; Dhar, Subhabrata

Schrödingerand Poisson equations are solved self-consistently in order to obtain the potential and charge density distribution in n-type GaN nanowalls tapered along c-axis by different angles. The study shows two-dimensional (2D) quantum confinement of electrons in the central vertical plane of the wall for the entire range of tapering. Calculation of room temperature electron mobility in the 2D channel shows a steady decrease with the increase of the inclination angle of the side facets with respect to the base. However, it is interesting to note that the mobility remains to be much larger than that of bulk GaN even for the inclination angle of 65∘. The properties of high mobility and the vertical orientation of the 2DEG plane in this system can be exploited in fabricating highly conducting transparent interconnects and field effect transistors, which can lead to large scale integration of 2D devices in future.

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

H-tailored surface conductivity in narrow band gap In(AsN)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velichko, A. V., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Patanè, A., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Makarovsky, O.

2015-01-12

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

PubMed

Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

2018-03-01

Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

PubMed

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Electron transporting water-gated thin film transistors

NASA Astrophysics Data System (ADS)

Al Naim, Abdullah; Grell, Martin

2012-10-01

We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

PubMed Central

Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

2012-01-01

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology

DOE PAGES

He, Zhengran; Shaik, Shoieb; Bi, Sheng; ...

2015-05-04

N,N 0-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN 2 film is much lower than the value of PDIF-CN 2 single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PaMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN 2 thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PaMSmore » or PMMA polymers, the morphology of the PDIF-CN 2 polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm 2/V s has been achieved from OTFTs based on the PDIF-CN 2 film with the pre-deposition of PaMS polymer.« less

Activity and Ca2+ regulate the mobility of TRPV1 channels in the plasma membrane of sensory neurons

PubMed Central

Senning, Eric N; Gordon, Sharona E

2015-01-01

TRPV1 channels are gated by a variety of thermal, chemical, and mechanical stimuli. We used optical recording of Ca2+ influx through TRPV1 to measure activity and mobility of single TRPV1 molecules in isolated dorsal root ganglion neurons and cell lines. The opening of single TRPV1 channels produced sparklets, representing localized regions of elevated Ca2+. Unlike sparklets reported for L-type Ca2+ channels, TRPV4 channels, and AchR channels, TRPV1 channels diffused laterally in the plasma membrane as they gated. Mobility was highly variable from channel-to-channel and, to a smaller extent, from cell to cell. Most surprisingly, we found that mobility decreased upon channel activation by capsaicin, but only in the presence of extracellular Ca2+. We propose that decreased mobility of open TRPV1 could act as a diffusion trap to concentrate channels in cell regions with high activity. DOI: http://dx.doi.org/10.7554/eLife.03819.001 PMID:25569155

A group communication approach for mobile computing mobile channel: An ISIS tool for mobile services

NASA Astrophysics Data System (ADS)

Cho, Kenjiro; Birman, Kenneth P.

1994-05-01

This paper examines group communication as an infrastructure to support mobility of users, and presents a simple scheme to support user mobility by means of switching a control point between replicated servers. We describe the design and implementation of a set of tools, called Mobile Channel, for use with the ISIS system. Mobile Channel is based on a combination of the two replication schemes: the primary-backup approach and the state machine approach. Mobile Channel implements a reliable one-to-many FIFO channel, in which a mobile client sees a single reliable server; servers, acting as a state machine, see multicast messages from clients. Migrations of mobile clients are handled as an intentional primary switch, and hand-offs or server failures are completely masked to mobile clients. To achieve high performance, servers are replicated at a sliding-window level. Our scheme provides a simple abstraction of migration, eliminates complicated hand-off protocols, provides fault-tolerance and is implemented within the existing group communication mechanism.

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

NASA Technical Reports Server (NTRS)

Rosenbaum, Steven E.; Kormanyos, Brian K.; Jelloian, Linda M.; Matloubian, Mehran; Brown, April S.; Larson, Lawrence E.; Nguyen, Loi D.; Thompson, Mark A.; Katehi, Linda P. B.; Rebeiz, Gabriel M.

1995-01-01

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Kawaji, Sachiko; Watanabe, Yukihiko; Onishi, Toru; Fujiwara, Hirokazu; Yamamoto, Kensaku; Yamamoto, Toshimasa

2017-04-01

Temperature characteristics of the channel mobility were investigated for 4H-SiC trenched MOSFETs in the range from 30 to 200 °C. The conventional model of channel mobility limited by carrier scattering is based on Si-MOSFETs and shows a greatly different channel mobility from the experimental value, especially at high temperatures. On the other hand, our improved mobility model taking into account optical phonon scattering yielded results in excellent agreement with experimental results. Moreover, the major factors limiting the channel mobility were found to be Coulomb scattering in a low effective field (<0.7 MV/cm) and optical phonon scattering in a high effective field.

47 CFR 22.575 - Use of mobile channel for remote control of station functions.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Use of mobile channel for remote control of...) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Paging and Radiotelephone Service One-Way Or Two-Way Mobile Operation § 22.575 Use of mobile channel for remote control of station functions. Carriers may...

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

NASA Astrophysics Data System (ADS)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei

2016-04-25

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Pursuing High-Mobility n-Type Organic Semiconductors by Combination of "Molecule-Framework" and "Side-Chain" Engineering.

PubMed

Zhang, Cheng; Zang, Yaping; Zhang, Fengjiao; Diao, Ying; McNeill, Christopher R; Di, Chong-An; Zhu, Xiaozhang; Zhu, Daoben

2016-10-01

"Molecule-framework" and "side-chain" engineering is powerful for the design of high-performance organic semiconductors. Based on 2DQTTs, the relationship between molecular structure, film microstructure, and charge-transport property in organic thin-film transistors (OTFTs) is studied. 2DQTT-o-B exhibits outstanding electron mobilities of 5.2 cm 2 V -1 s -1 , which is a record for air-stable solution-processable n-channel small-molecule OTFTs to date. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RAC-multi: reader anti-collision algorithm for multichannel mobile RFID networks.

PubMed

Shin, Kwangcheol; Song, Wonil

2010-01-01

At present, RFID is installed on mobile devices such as mobile phones or PDAs and provides a means to obtain information about objects equipped with an RFID tag over a multi-channeled telecommunication networks. To use mobile RFIDs, reader collision problems should be addressed given that readers are continuously moving. Moreover, in a multichannel environment for mobile RFIDs, interference between adjacent channels should be considered. This work first defines a new concept of a reader collision problem between adjacent channels and then suggests a novel reader anti-collision algorithm for RFID readers that use multiple channels. To avoid interference with adjacent channels, the suggested algorithm separates data channels into odd and even numbered channels and allocates odd-numbered channels first to readers. It also sets an unused channel between the control channel and data channels to ensure that control messages and the signal of the adjacent channel experience no interference. Experimental results show that suggested algorithm shows throughput improvements ranging from 29% to 46% for tag identifications compared to the GENTLE reader anti-collision algorithm for multichannel RFID networks.

RAC-Multi: Reader Anti-Collision Algorithm for Multichannel Mobile RFID Networks

PubMed Central

Shin, Kwangcheol; Song, Wonil

2010-01-01

At present, RFID is installed on mobile devices such as mobile phones or PDAs and provides a means to obtain information about objects equipped with an RFID tag over a multi-channeled telecommunication networks. To use mobile RFIDs, reader collision problems should be addressed given that readers are continuously moving. Moreover, in a multichannel environment for mobile RFIDs, interference between adjacent channels should be considered. This work first defines a new concept of a reader collision problem between adjacent channels and then suggests a novel reader anti-collision algorithm for RFID readers that use multiple channels. To avoid interference with adjacent channels, the suggested algorithm separates data channels into odd and even numbered channels and allocates odd-numbered channels first to readers. It also sets an unused channel between the control channel and data channels to ensure that control messages and the signal of the adjacent channel experience no interference. Experimental results show that suggested algorithm shows throughput improvements ranging from 29% to 46% for tag identifications compared to the GENTLE reader anti-collision algorithm for multichannel RFID networks. PMID:22315528

Response of bed mobility to sediment supply in natural gravel bed channels: A detailed examination and evaluation of mobility parameters

Treesearch

T. E. Lisle; J. M. Nelson; B. L. Barkett; J. Pitlick; M. A. Madej

1998-01-01

Recent laboratory experiments have shown that bed mobility in gravel bed channels responds to changes in sediment supply, but detailed examinations of this adjustment in natural channels have been lacking, and practical methodologies to measure bed mobility have not been tested. We examined six gravel-bed, alternate-bar channels which have a wide range in annual...

Anesthetics act in quantum channels in brain microtubules to prevent consciousness.

PubMed

Craddock, Travis J A; Hameroff, Stuart R; Ayoub, Ahmed T; Klobukowski, Mariusz; Tuszynski, Jack A

2015-01-01

The mechanism by which anesthetic gases selectively prevent consciousness and memory (sparing non-conscious brain functions) remains unknown. At the turn of the 20(th) century Meyer and Overton showed that potency of structurally dissimilar anesthetic gas molecules correlated precisely over many orders of magnitude with one factor, solubility in a non-polar, 'hydrophobic' medium akin to olive oil. In the 1980s Franks and Lieb showed anesthetics acted in such a medium within proteins, suggesting post-synaptic membrane receptors. But anesthetic studies on such proteins yielded only confusing results. In recent years Eckenhoff and colleagues have found anesthetic action in microtubules, cytoskeletal polymers of the protein tubulin inside brain neurons. 'Quantum mobility' in microtubules has been proposed to mediate consciousness. Through molecular modeling we have previously shown: (1) olive oil-like non-polar, hydrophobic quantum mobility pathways ('quantum channels') of tryptophan rings in tubulin, (2) binding of anesthetic gas molecules in these channels, and (3) capabilities for π-electron resonant energy transfer, or exciton hopping, among tryptophan aromatic rings in quantum channels, similar to photosynthesis protein quantum coherence. Here, we show anesthetic molecules can impair π-resonance energy transfer and exciton hopping in tubulin quantum channels, and thus account for selective action of anesthetics on consciousness and memory.

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

PubMed

Secor, Ethan B; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C

2016-07-13

Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

NASA Astrophysics Data System (ADS)

de la Broïse, Xavier; Lugiez, Francis; Bounab, Ayoub; Le Coguie, Alain

2015-07-01

High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/√Hz at 1 kHz.

Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.

PubMed

Miao, Xin; Zhang, Chen; Li, Xiuling

2013-06-12

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

A Quantum Proxy Weak Blind Signature Scheme Based on Controlled Quantum Teleportation

NASA Astrophysics Data System (ADS)

Cao, Hai-Jing; Yu, Yao-Feng; Song, Qin; Gao, Lan-Xiang

2015-04-01

Proxy blind signature is applied to the electronic paying system, electronic voting system, mobile agent system, security of internet, etc. A quantum proxy weak blind signature scheme is proposed in this paper. It is based on controlled quantum teleportation. Five-qubit entangled state functions as quantum channel. The scheme uses the physical characteristics of quantum mechanics to implement message blinding, so it could guarantee not only the unconditional security of the scheme but also the anonymity of the messages owner.

An Optoelectronics Research Center

DTIC Science & Technology

2006-03-08

compared with a -2 mm wide slab, -200 nrn thick silicon (SOl) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and...acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the...application areas including: nanoscale epitaxial growth for semiconductor heterostructures; nanofluidics for biological separations; nanomagnetics for

Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

NASA Astrophysics Data System (ADS)

Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

2016-11-01

Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Nagaboopathy; Raghavan, Srinivasan; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012

2015-10-07

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed atmore » an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.« less

Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer.

PubMed

Melezhik, E O; Gumenjuk-Sichevska, J V; Sizov, F F

2016-12-01

Noise characteristics and resistance of semimetal-type mercury-cadmium-telluride quantum wells (QWs) at the liquid nitrogen temperature are studied numerically, and their dependence on the QW parameters and on the electron concentration is established. The QW band structure calculations are based on the full 8-band k.p Hamiltonian. The electron mobility is simulated by the direct iterative solution of the Boltzmann transport equation, which allows us to include correctly all the principal scattering mechanisms, elastic as well as inelastic.We find that the generation-recombination noise is strongly suppressed due to the very fast recombination processes in semimetal QWs. Hence, the thermal noise should be considered as a main THz sensitivity-limiting mechanism in those structures. Optimization of a semimetal Hg1-xCdxTe QW to make it an efficient THz bolometer channel should include the increase of electron concentration in the well and tuning the molar composition x close to the gapless regime.

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

PubMed Central

Giubileo, Filippo; Di Bartolomeo, Antonio; Martucciello, Nadia; Romeo, Francesco; Iemmo, Laura; Romano, Paola; Passacantando, Maurizio

2016-01-01

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO2, obtaining specific contact resistivity ρc≈19 kΩ·µm2 and carrier mobility as high as 4000 cm2·V−1·s−1. By using a highly doped p-Si/SiO2 substrate as the back gate, we analyzed the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate herein that low energy irradiation is detrimental to the transistor current capability, resulting in an increase in contact resistance and a reduction in carrier mobility, even at electron doses as low as 30 e−/nm2. We also show that irradiated devices recover their pristine state after few repeated electrical measurements. PMID:28335335

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

47 CFR 73.623 - DTV applications and changes to DTV allotments.

Code of Federal Regulations, 2010 CFR

2010-10-01

... of land mobile operations on channels 14-20. The Commission will not accept petitions to amend the... co-channel land mobile operation or 176 km from the city center of an adjacent channel land mobile... DTV Table that do not meet the minimum DTV-to-land mobile spacing standards will, however, be...

47 CFR 73.623 - DTV applications and changes to DTV allotments.

Code of Federal Regulations, 2013 CFR

2013-10-01

... of land mobile operations on channels 14-20. The Commission will not accept petitions to amend the... co-channel land mobile operation or 176 km from the city center of an adjacent channel land mobile... DTV Table that do not meet the minimum DTV-to-land mobile spacing standards will, however, be...

47 CFR 73.623 - DTV applications and changes to DTV allotments.

Code of Federal Regulations, 2014 CFR

2014-10-01

... of land mobile operations on channels 14-20. The Commission will not accept petitions to amend the... co-channel land mobile operation or 176 km from the city center of an adjacent channel land mobile... DTV Table that do not meet the minimum DTV-to-land mobile spacing standards will, however, be...

47 CFR 73.623 - DTV applications and changes to DTV allotments.

Code of Federal Regulations, 2011 CFR

2011-10-01

... of land mobile operations on channels 14-20. The Commission will not accept petitions to amend the... co-channel land mobile operation or 176 km from the city center of an adjacent channel land mobile... DTV Table that do not meet the minimum DTV-to-land mobile spacing standards will, however, be...

47 CFR 73.623 - DTV applications and changes to DTV allotments.

Code of Federal Regulations, 2012 CFR

2012-10-01

... of land mobile operations on channels 14-20. The Commission will not accept petitions to amend the... co-channel land mobile operation or 176 km from the city center of an adjacent channel land mobile... DTV Table that do not meet the minimum DTV-to-land mobile spacing standards will, however, be...

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

NASA Astrophysics Data System (ADS)

Liu, Gang; Tuttle, Blair R.; Dhar, Sarit

2015-06-01

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.

We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triplemore » dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.« less

Effects of p-(Trifluoromethoxy)benzyl and p-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable n-Type Semiconductors.

PubMed

Zhang, Dongwei; Zhao, Liang; Zhu, Yanan; Li, Aiyuan; He, Chao; Yu, Hongtao; He, Yaowu; Yan, Chaoyi; Goto, Osamu; Meng, Hong

2016-07-20

N,N'-Bis(4-trifluoromethoxyphenyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-POCF3) and N,N'-bis(4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-BOCF3) have similar optical and electrochemical properties with a deep LUMO level of approximately 4.2 eV, but exhibit significant differences in electron mobility and molecular packing. NDI-POCF3 exhibits nondetectable charge mobility. Interestingly, NDI-BOCF3 shows air-stable electron transfer performance with enhanced mobility by increasing the deposition temperature onto the octadecyltrichlorosilane (OTS)-modified SiO2/Si substrates and achieves electron mobility as high as 0.7 cm(2) V(-1) s(-1) in air. The different mobilities of those two materials can be explained by several factors including thin-film morphology and crystallinity. In contrast to the poor thin-film morphology and crystallinity of NDI-POCF3, NDI-BOCF3 exhibits larger grain sizes and improved crystallinities due to the higher deposition temperature. In addition, the theoretical calculated transfer integrals of the intermolecular lowest unoccupied molecular orbital (LUMO) of the two materials further show that a large intermolecular orbital overlap of NDI-BOCF3 can transfer electron more efficiently than NDI-POCF3 in thin-film transistors. On the basis of fact that the theoretical calculations are consistent with the experimental results, it can be concluded that the p-(trifluoromethoxy) benzyl (BOCF3) molecular architecture on the former position of the naphthalene tetracarboxylic diimides (NDI) core provides a more effective way to enhance the intermolecular electron transfer property than the p-(trifluoromethoxy) phenyl (POCF3) group for the future design of NDI-related air-stable n-channel semiconductor.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Fluctuations, Electron Transport, and Flow Shear in 2D Axial, Azimuthal (z-θ) Hybrid Hall Thruster Simulations.

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Gascon, Nicolas; Knoll, Aaron; Scharfe, Michelle; Cappelli, Mark

2007-11-01

Motivated by the inability of radial-axial (r-z) simulations to properly treat cross-field electron transport in Hall thrusters, a novel 2D z-θ model has been implemented. In common with many r-z descriptions, the simulation is hybrid in nature and assumes quasi-neutrality. Unlike r-z models, electron transport is not enhanced with an ad-hoc mobility coefficient; instead it is given by collisional or ``classical'' terms as well as ``anomalous'' contributions associated with azimuthal electric field fluctuations. Results indicate that anomalous transport dominates classical transport for most of the channel and near field, except in a strong electron flow shear region near the channel exit. The correlation between flow shear, fluctuation behavior, and electron transport will be examined, along with experimental data from the Stanford Hall Thruster. Our findings make a strong link to the turbulent transport suppression mechanism by flow shear seen in fusion devices. The scheme for combining the r-z and z-θ descriptions into an upcoming 3D hybrid model will be presented.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

PubMed

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

PubMed Central

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

2017-01-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.

PubMed

Choi, Pyungho; Lee, Junki; Park, Hyoungsun; Baek, Dohyun; Lee, Jaehyeong; Yi, Junsin; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O2/(Ar + O2)) and subsequent annealing process. The electrical properties exhibited by this device include field-effect mobility (μ(eff)), sub-threshold swing (SS), and on/off current ratio (I(ON/OFF)) values of 28.97 cm2/V x s, 0.2 V/decade, and 2.64 x 10(7), respectively. The average transmittance values for each OPP condition in the visible range were greater than 80%. The positive gate bias stress resulted in a positive threshold voltage (V(th)) shift in the transfer curves and degraded the parameters μ(eff) and SS. These phenomena originated from electron trapping from the ITZO channel layer into the oxide/ITZO interface trap sites.

Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

NASA Astrophysics Data System (ADS)

Liyana, V. P.; Stephania, A. M.; Shiju, K.; Predeep, P.

2015-06-01

Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (VT), on-off ratio (Ion/Ioff) and their comparative analysis is reported.

Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

NASA Technical Reports Server (NTRS)

Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

1995-01-01

The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

Selective dispersion of high-purity semiconducting carbon nanotubes using indacenodithiophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Ji, Dongseob; Lee, Seung-Hoon; Noh, Yong-Young

2018-01-01

The facile sorting of highly pure semiconducting single-walled carbon nanotubes (s-SWNTs) is still one of the challenging issues for the next-generation wearable electronic devices such as various opto-electric devices and field-effect transistors (FETs). Herein, we demonstrate the selective dispersion of high-purity s-SWNTs using indacenodithiophene-co-benzothiadiazole (IDT-BT), which is a state-of-the-art high-mobility conjugated polymer. By the selective wrapping of the IDT-BT copolymer, SWNTs of chiral indices (6, 5), (7, 5), (7, 6), (8, 4), (9, 4), (8, 6), (8, 7), (10, 5), (9, 7), (10, 6), (11, 1), and (13, 3) are sorted. Finally, the networked s-SWNT film formed by spin-coating is applied as an active layer of FETs that exhibited ambipolar characteristics with an average mobility of 2.28 cm2/V s in the p-channel and 2.10 cm2/V s in the n-channel. The ON/OFF ratios in both p- and n-channels are approximately 105, which supports the high purity separation of s-SWNTs wrapped by IDT-BT.

Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors

DTIC Science & Technology

2014-01-01

GaAs substrates for low power and high frequency applications, J. Appl. Phys. 109 (2011) 033706. [28] A. Ali, H. Madan , A. Agrawal, I. Ramirez, R...Growth of InAsSb-channel high electron mobility transistor structures, J. Vac. Sci. Technol. B 23 (2005) 1441–1444. [30] A. Ali, H. Madan , M.J

Digital Media and Latino Families: New Channels for Learning, Parenting, and Local Organizing

ERIC Educational Resources Information Center

Fuller, Bruce; Lizárraga, José Ramon; Gray, James H.

2015-01-01

Latino families in America increasingly enjoy access to a dizzying array of content on a variety of electronic devices, from televisions and video games to personal computers and mobile devices. Bruce Fuller, José Ramón Lizárraga, James H. Gray raise pressing questions that face Latino families as they adopt technologies that both have the…

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

PubMed

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-03-21

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

PubMed Central

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-01-01

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. PMID:28772679

Electrical detection of spin transport in Si two-dimensional electron gas systems

NASA Astrophysics Data System (ADS)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

NASA Astrophysics Data System (ADS)

Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Choi, Hyeongsu; Lee, Seungjin; Kim, Juyoung; Sul, Onejae; Lee, Seungbeck; Jeon, Hyeongtag

2017-02-01

We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 °C using ALD, and we then annealed at 300 °C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9° and A1g mode at 313 cm-1. The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p++Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39×103 to 6.39×103 and a mobility of from 0.0076 cm2/Vs to 0.06 cm2/Vs.

33 CFR 334.783 - Arlington Channel, U.S. Coast Guard Base Mobile, Mobile, Alabama, Coast Guard restricted area.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Guard Base Mobile, Mobile, Alabama, Coast Guard restricted area. 334.783 Section 334.783 Navigation and... RESTRICTED AREA REGULATIONS § 334.783 Arlington Channel, U.S. Coast Guard Base Mobile, Mobile, Alabama, Coast... without prior approval from the Commanding Officer, U.S. Coast Guard Group Mobile or his designated...

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2016-09-21

Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less

Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

NASA Astrophysics Data System (ADS)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

2015-10-01

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires.

PubMed

Wen, Feng; Tutuc, Emanuel

2018-01-10

We report the growth and characterization of epitaxial, coherently strained Si x Ge 1-x -Si core-shell nanowire heterostructure through vapor-liquid-solid growth mechanism for the Si x Ge 1-x core, followed by an in situ ultrahigh-vacuum chemical vapor deposition for the Si shell. Raman spectra acquired from individual nanowire reveal the Si-Si, Si-Ge, and Ge-Ge modes of the Si x Ge 1-x core and the Si-Si mode of the shell. Because of the compressive (tensile) strain induced by lattice mismatch, the core (shell) Raman modes are blue (red) shifted compared to those of unstrained bare Si x Ge 1-x (Si) nanowires, in good agreement with values calculated using continuum elasticity model coupled with lattice dynamic theory. A large tensile strain of up to 2.3% is achieved in the Si shell, which is expected to provide quantum confinement for electrons due to a positive core-to-shell conduction band offset. We demonstrate n-type metal-oxide-semiconductor field-effect transistors using Si x Ge 1-x -Si core-shell nanowires as channel and observe a 40% enhancement of the average electron mobility compared to control devices using Si nanowires due to an increased electron mobility in the tensile-strained Si shell.

Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

NASA Astrophysics Data System (ADS)

Baykan, Mehmet Onur

Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width dependent strain response of tri-gate p-type FinFETs are experimentally extracted using a 4-point bending jig. It is found that the low-field piezoresistance coefficient of p-type FinFETs can be modeled by using a weighted conductance average of the top and sidewall bulk piezoresistance coefficients. Next, the strain enhancement of p-type ballistic silicon nanowire MOSFETs is studied using sp3d 5s* basis nearest-neighbor tight-binding simulations coupled with a semiclassical top-of-the-barrier transport model. Size and orientation dependent strain enhancement of ballistic hole transport is explained by the strain-induced modification of the 1D nanowire valence band density-of-states. Further insights are provided for future p-type high-performance silicon nanowire logic devices. A physics based investigation is conducted to understand the strain effects on surface roughness limited electron mobility in silicon inversion layers. Based on the evidence from electrical and material characterization, a strain-induced surface morphology change is hypothesized. To model the observed electrical characteristics, we have employed a self-consistent MOSFET mobility simulator coupled with an ad hoc strain-induced roughness modification. The strain induced surface morphology change is found to be consistent among electrical and materials characterization, as well as transport simulations. In order to bridge the gap between the drift-diffusion based models for long-channel devices and the quasi-ballistic models for nanoscale channels, a unified carrier transport model is developed using an updated one-flux theory. Including the high-field and carrier confinement effects, a surface-potential based analytical transmission expression is obtained for the entire MOSFET operation range. With the new channel transmission equation and average carrier drift velocity, a new expression for channel ballisticity is defined. Impact of mechanical strain on carrier transport for both nMOSFETs and pMOSFETs in both linear and saturation regimes is explained using the new channel transmission definitions. To understand the impact of mechanical strain on AlGaN/GaN HEMT trap generation, we have devised an experimental method to obtain the photon flux-normalized relative areal trap density distribution using photoionization spectroscopy technique. The details of the trap extraction method and the experimental setup are given. Using this setup, the trap characteristics are extracted for both ungated transmission line module (TLM) and gated HEMT devices from both Si and SiC substrates. The changes in the device trap characteristics are emphasized before and after electrical stressing. It is found through the step-voltage stressing of the AlGaN/GaN HEMT gate stack that the device degradation is due to the near bandgap trap generation, which are shown to be related to the structural defects in GaN.

Transmission over EHF mobile satellite channels

NASA Technical Reports Server (NTRS)

Zhuang, W.; Chouinard, J.-Y.; Yongacoglu, A.

1993-01-01

Land mobile satellite communications at Ka-band (30/20 GHz) are attracting an increasing interest among researchers because of the frequency band availability and the possibility of small earth station designs. However, communications at the Ka-band pose significant challenges in the system designs due to severe channel impairments. Because only very limited experimental data for mobile applications at Ka-band is available, this paper studies the channel characteristics based on experimental data at L-band (1.6/1.5 GHz) and the use of frequency scaling. The land mobile satellite communication channel at Ka-band is modelled as log-normal Rayleigh fading channel. The first and second-order statistics of the fading channel are studied. The performance of a coherent BPSK system over the fading channel at L-band and K-band is evaluated theoretically and validated by computer simulations. Conclusions on the communication channel characteristics and system performance at L-band and Ka-band are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khurgin, Jacob B., E-mail: jakek@jhu.edu; Bajaj, Sanyam; Rajan, Siddharth

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, themore » saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.« less

Theory for the anomalous electron transport in Hall-effect thrusters

NASA Astrophysics Data System (ADS)

Lafleur, Trevor; Baalrud, Scott; Chabert, Pascal

2016-09-01

Using insights from particle-in-cell (PIC) simulations, we develop a kinetic theory to explain the anomalous cross-field electron transport in Hall-effect thrusters (HETs). The large axial electric field in the acceleration region of HETs, together with the radially applied magnetic field, causes electrons to drift in the azimuthal direction with a very high velocity. This drives an electron cyclotron instability that produces large amplitude oscillations in the plasma density and azimuthal electric field, and which is convected downstream due to the large axial ion drift velocity. The frequency and wavelength of the instability are of the order of 5 MHz and 1 mm respectively, while the electric field amplitude can be of a similar magnitude to axial electric field itself. The instability leads to enhanced electron scattering many orders of magnitude higher than that from standard electron-neutral or electron-ion Coulomb collisions, and gives electron mobilities in good agreement with experiment. Since the instability is a strong function of almost all plasma properties, the mobility cannot in general be fitted with simple 1/B or 1/B2 scaling laws, and changes to the secondary electron emission coefficient of the HET channel walls are expected to play a role in the evolution of the instability. This work received financial support from a CNES postdoctoral research award.

Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.

PubMed

Yao, Zihan; Liu, Jialun; Xu, Kai; Chow, Edmond K C; Zhu, Wenjuan

2018-03-27

In this paper, we investigate the synthesis of WSe 2 by chemical vapor deposition and study the current transport and device scaling of monolayer WSe 2 . We found that the device characteristics of the back-gated WSe 2 transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. The threshold voltage, subthreshold swing, and extracted field-effect mobility vary with the applied drain bias. The output characteristics in the long-channel transistors show ohmic-like behavior, while that in the short-channel transistors show Schottky-like behavior. Our investigation reveals that these phenomena are caused by the drain-induced barrier lowering (short-channel effect). For back-gated WSe 2 transistors with 280 nm oxide, the short-channel effect appears when the channel length is shorter than 0.4 µm. This extremely long electrostatic scaling length is due to the thick back-gate oxides. In addition, we also found that the hydrogen flow rate and the amount of WO 3 precursor play an important role in the morphology of the WSe 2 . The hole mobility of the monolayer WSe 2 is limited by Columbic scattering below 250 K, while it is limited by phonon scattering above 250 K. These findings are very important for the synthesis of WSe 2 and accurate characterization of the electronic devices based on 2D materials.

Electron and Phonon Engineered Nano- and Heterostructures for Increased Speed and Performance Enhancement of the Electronic and Optoelectronic Devices

DTIC Science & Technology

2011-01-01

doped source and drain form ohmic contact to metal silicide [2]-[6] due to their immunity to short channel effect [7]-[10]. In this project, we...investigated the hole mobility of SB Si NW. II. Device Fabrication Technology We prepared SiNWs by Au-catalyzed vapor-transport as described in Ref. [11...overlapping Ti/Au (70/50 nm) top gate is defined. Devices are characterized at this stage and also after annealing. III. Silicide Formation Our devices

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

PubMed

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2003-05-23

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

78 FR 77359 - Eighth Coast Guard District Annual Safety Zones; New Year's Eve Celebration/City of Mobile...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-23

... in past years but the fireworks display will move to a new location in the Mobile Channel beginning...-AA00 Eighth Coast Guard District Annual Safety Zones; New Year's Eve Celebration/City of Mobile; Mobile... enforce the City of Mobile New Year's Eve Celebration safety zone in the Mobile Channel, Mobile, AL from...

High-Throughput Synthesis and Structure of Zeolite ZSM-43 with Two-Directional 8-Ring Channels.

PubMed

Willhammar, Tom; Su, Jie; Yun, Yifeng; Zou, Xiaodong; Afeworki, Mobae; Weston, Simon C; Vroman, Hilda B; Lonergan, William W; Strohmaier, Karl G

2017-08-07

The aluminosilicate zeolite ZSM-43 (where ZSM = Zeolite Socony Mobil) was first synthesized more than 3 decades ago, but its chemical structure remained unsolved because of its poor crystallinity and small crystal size. Here we present optimization of the ZSM-43 synthesis using a high-throughput approach and subsequent structure determination by the combination of electron crystallographic methods and powder X-ray diffraction. The synthesis required the use of a combination of both inorganic (Cs + and K + ) and organic (choline) structure-directing agents. High-throughput synthesis enabled a screening of the synthesis conditions, which made it possible to optimize the synthesis, despite its complexity, in order to obtain a material with significantly improved crystallinity. When both rotation electron diffraction and high-resolution transmission electron microscopy imaging techniques are applied, the structure of ZSM-43 could be determined. The structure of ZSM-43 is a new zeolite framework type and possesses a unique two-dimensional channel system limited by 8-ring channels. ZSM-43 is stable upon calcination, and sorption measurements show that the material is suitable for adsorption of carbon dioxide as well as methane.

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence onmore » the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.« less

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Toporkov, M.; Özgür, Ü.; Morkoç, H.

2018-05-01

High-field electron transport in two-dimensional channels at ZnO/MgZnO heterointerfaces has been investigated experimentally. Pulsed current-voltage (I-V) and microwave noise measurements used voltage pulse widths down to 30 ns and electric fields up to 100 kV/cm. The samples investigated featured electron densities in the range of 4.2-6.5 × 1012 cm-2, and room temperature mobilities of 142-185 cm2/V s. The pulsed nature of the applied field ensured negligible, if any, change in the electron density, thereby allowing velocity extraction from current with confidence. The highest extracted electron drift velocity of ˜0.5 × 107 cm/s is somewhat smaller than that estimated for bulk ZnO; this difference is explained in the framework of longitudinal optical phonon accumulation (hot-phonon effect). The microwave noise data allowed us to rule out the effect of excess acoustic phonon temperature caused by Joule heating. Real-space transfer of hot electrons into the wider bandgap MgZnO layer was observed to be a limiting factor in samples with a high Mg content (48%), due to phase segregation and the associated local lowering of the potential barrier.

3D modeling of dual-gate FinFET.

PubMed

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

3D modeling of dual-gate FinFET

NASA Astrophysics Data System (ADS)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-01

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

33 CFR 165.835 - Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Security Zone; Port of Mobile, Mobile Ship Channel, Mobile, AL. 165.835 Section 165.835 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY REGULATED NAVIGATION AREAS AND LIMITED ACCESS AREAS Specific Regulated...

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

2015-01-19

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Ren, F.; Allums, K. K.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.; Fitch, R. C.; Gillespie, J. K.; Jenkins, T. J.; Dettmer, R.; Sewell, J.; Via, G. D.; Crespo, A.; Baca, A. G.; Shul, R. J.

2003-06-01

AlGaN/GaN high electron mobility transistors with either MgO or Sc 2O 3 surface passivation were irradiated with 40 MeV protons at a dose of 5×10 9 cm -2. While both forward and reverse bias current were decreased in the devices as a result of decreases in channel doping and introduction of generation-recombination centers, there was no significant change observed in gate lag measurements. By sharp contrast, unpassivated devices showed significant decreases in drain current under pulsed conditions for the same proton dose. These results show the effectiveness of the oxide passivation in mitigating the effects of surface states present in the as-grown structures and also of surface traps created by the proton irradiation.

Understanding the conductive channel evolution in Na:WO3-x-based planar devices

NASA Astrophysics Data System (ADS)

Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

2015-03-01

An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07545e

Multiband Radio Frequency Interconnect (MRFI) Technology For Next Generation Mobile/Airborne Computing Systems

DTIC Science & Technology

2017-02-01

enable high scalability and reconfigurability for inter-CPU/Memory communications with an increased number of communication channels in frequency ...interconnect technology (MRFI) to enable high scalability and re-configurability for inter-CPU/Memory communications with an increased number of communication ...testing in the University of California, Los Angeles (UCLA) Center for High Frequency Electronics, and Dr. Afshin Momtaz at Broadcom Corporation for

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

NASA Astrophysics Data System (ADS)

Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

2016-02-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

Power Dependence of the Electron Mobility Profile in a Hall Thruster

NASA Technical Reports Server (NTRS)

Jorns, Benjamin A.; Hofery, Richard H.; Mikellides, Ioannis G.

2014-01-01

The electron mobility profile is estimated in a 4.5 kW commercial Hall thruster as a function of discharge power. Internal measurements of plasma potential and electron temperature are made in the thruster channel with a high-speed translating probe. These measurements are presented for a range of throttling conditions from 150 - 400 V and 0.6 - 4.5 kW. The fluid-based solver, Hall2De, is used in conjunction with these internal plasma parameters to estimate the anomalous collision frequency profile at fixed voltage, 300 V, and three power levels. It is found that the anomalous collision frequency profile does not change significantly upstream of the location of the magnetic field peak but that the extent and magnitude of the anomalous collision frequency downstream of the magnetic peak does change with thruster power. These results are discussed in the context of developing phenomenological models for how the collision frequency profile depends on thruster operating conditions.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Critical role of alkyl chain branching of organic semiconductors in enabling solution-processed N-channel organic thin-film transistors with mobility of up to 3.50 cm² V(-1) s(-1).

PubMed

Zhang, Fengjiao; Hu, Yunbin; Schuettfort, Torben; Di, Chong-an; Gao, Xike; McNeill, Christopher R; Thomsen, Lars; Mannsfeld, Stefan C B; Yuan, Wei; Sirringhaus, Henning; Zhu, Daoben

2013-02-13

Substituted side chains are fundamental units in solution processable organic semiconductors in order to achieve a balance of close intermolecular stacking, high crystallinity, and good compatibility with different wet techniques. Based on four air-stable solution-processed naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) that bear branched alkyl chains with varied side-chain length and different branching position, we have carried out systematic studies on the relationship between film microstructure and charge transport in their organic thin-film transistors (OTFTs). In particular synchrotron measurements (grazing incidence X-ray diffraction and near-edge X-ray absorption fine structure) are combined with device optimization studies to probe the interplay between molecular structure, molecular packing, and OTFT mobility. It is found that the side-chain length has a moderate influence on thin-film microstructure but leads to only limited changes in OTFT performance. In contrast, the position of branching point results in subtle, yet critical changes in molecular packing and leads to dramatic differences in electron mobility ranging from ~0.001 to >3.0 cm(2) V(-1) s(-1). Incorporating a NDI-DTYM2 core with three-branched N-alkyl substituents of C(11,6) results in a dense in-plane molecular packing with an unit cell area of 127 Å(2), larger domain sizes of up to 1000 × 3000 nm(2), and an electron mobility of up to 3.50 cm(2) V(-1) s(-1), which is an unprecedented value for ambient stable n-channel solution-processed OTFTs reported to date. These results demonstrate that variation of the alkyl chain branching point is a powerful strategy for tuning of molecular packing to enable high charge transport mobilities.

CuI as Hole-Transport Channel for Enhancing Photoelectrocatalytic Activity by Constructing CuI/BiOI Heterojunction.

PubMed

Sun, Mingjuan; Hu, Jiayue; Zhai, Chunyang; Zhu, Mingshan; Pan, Jianguo

2017-04-19

In this paper, CuI, as a typical hole-transport channel, was used to construct a high-performance visible-light-driven CuI/BiOI heterostructure for photoelectrocatalytic applications. The heterostructure combines the broad visible absorption of BiOI and high hole mobility of CuI. Compared to pure BiOI, the CuI/BiOI heterostructure exhibited distinctly enhanced photoelectrocatalytic performance for the oxidation of methanol and organic pollutants under visible-light irradiation. The photogenerated electron-hole pairs of the excited BiOI can be separated efficiently through CuI, in which the CuI acts as a superior hole-transport channel to improve photoelectrocatalytic oxidization of methanol and organic pollutants. The outstanding photoelectrocatalytic activity shows that the p-type CuI works as a promising hole-transport channel to improve the photocatalytic performance of traditional semiconductors.

Mobility of large woody debris (LWD) jams in a low gradient channel

NASA Astrophysics Data System (ADS)

Curran, Joanna C.

2010-04-01

Mobility of large woody debris (LWD) in low gradient channels is an important but often overlooked transport process. The majority of studies on LWD have focused on its role in geomorphic and ecologic river processes. When jams extend across the width of the channel, they have the potential to retain sediment and alter the channel profile. When jams obstruct only a portion of the channel, they can re-direct flow, altering patterns of scour and deposition. The boundary complexity created by LWD has a recognized role in riverine ecosystems which has led to programs of replacing LWD in-channel corridors where it was previously removed. Although LWD jams are common in rivers around the world, they have been studied most intensely in steep, forested channel reaches where they are often found to be stable channel features. It is not fully known how much of the information on LWD from steep forested channels will transfer to other channel types. Whereas it may be reasonable to assume that the ecological benefits of LWD are similar in low gradient channels, research has shown that a much higher rate of LWD transport occurs in low gradient channels, with jams mobilized on timescales of 10 0-10 2 years. This study evaluates the distribution and mobility of LWD over 72 km of the San Antonio River, a low gradient channel in southeast Texas. LWD jam locations were identified for 2003 and 2007 using a combination of aerial photography and field mapping. Each jam was cataloged according to its location in the channel cross-section and the amount of channel area blocked. During the four-year period, all the LWD jams were mobilized, including those jams extending across the channel width. Although easily mobilized, 34 jams re-form in the same locations, creating 34 channel locations with persistent LWD jams. Data from the San Antonio River are applied to two models developed to predict LWD mobility and transport distances to assess the applicability of each model to a low gradient channel. The locations of stable (or recurring) LWD jams were matched to model results where predicted LWD transport distances were equal to measured LWD jam spacing. Model results showed good agreement with the mean and median spacing of LWD jams when given input parameters specific to the channel and wood species. The ability to predict where LWD jams will persist over time in a low gradient channel has application in watershed management. Persistent LWD jams can exert a greater influence on channel morphology and may require active management.

Interpretation and Regulation of Electronic Defects in IGZO TFTs Through Materials & Processes

NASA Astrophysics Data System (ADS)

Mudgal, Tarun

The recent rise in the market for consumer electronics has fueled extensive research in the field of display. Thin-Film Transistors (TFTs) are used as active matrix switching devices for flat panel displays such as LCD and OLED. The following investigation involves an amorphous metal-oxide semiconductor that has the potential for improved performance over current technology, while maintaining high manufacturability. Indium-Gallium-Zinc-Oxide (IGZO) is a semiconductor material which is at the onset of commercialization. The low-temperature large-area deposition compatibility of IGZO makes it an attractive technology from a manufacturing standpoint, with an electron mobility that is 10 times higher than current amorphous silicon technology. The stability of IGZO TFTs continues to be a challenge due to the presence of defect states and problems associated with interface passivation. The goal of this dissertation is to further the understanding of the role of defect states in IGZO, and investigate materials and processes needed to regulate defects to the level at which the associated influence on device operation is controlled. The relationships between processes associated with IGZO TFT operation including IGZO sputter deposition, annealing conditions and back-channel passivation are established through process experimentation, materials analysis, electrical characterization, and modeling of electronic properties and transistor behavior. Each of these components has been essential in formulating and testing several hypotheses on the mechanisms involved, and directing efforts towards achieving the goal. Key accomplishments and quantified results are summarized as follows: • XPS analysis identified differences in oxygen vacancies in samples before and after oxidizing ambient annealing at 400 °C, showing a drop in relative integrated area of the O-1s peak from 32% to 19%, which experimentally translates to over a thousand fold decrease in the channel free electron concentration. • Transport behavior at cryogenic temperatures identified variable range hopping as the electron transport mechanism at temperature below 130 K, whereas at temperature greater than 130 K, the current vs temperature response followed an Arrhenius relationship consistent with extended state transport. • Refinement of an IGZO material model for TCAD simulation, which consists of oxygen vacancy donors providing an integrated space charge concentration NVO = +5e15 cm-3, and acceptor-like band-tail states with a total integrated ionized concentration of NTA = -2e18 cm-3. An intrinsic electron mobility was established to be micron = 12.7 cm2/V·s. • A SPICE-compatible 2D on-state operation model for IGZO TFTs has been developed which includes the integration of drain-impressed deionization of band-tail states and results in a 2D modification of free channel charge. The model provides an exceptional match to measured data and TCAD simulation, with model parameters for channel mobility (microch = 12 cm2/V·s) and threshold voltage (V T = 0.14 V) having a close match to TCAD analogs. • TCAD material and device models for bottom-gate and double-gate TFT configurations have been developed which depict the role of defect states on device operation, as well as provide insight and support of a presented hypothesis on DIBL like device behavior associated with back-channel interface trap inhomogeneity. This phenomenon has been named Trap Associated Barrier Lowering (TABL). • A process integration scheme has been developed that includes IGZO back-channel passivation with PECVD SiO2, furnace annealing in O2 at 400 °C, and a thin capping layer of alumina deposited via atomic layer deposition. This process supports device stability when subjected to negative and positive bias stress conditions, and thermal stability up to 140 °C. It also enables TFT operation at short channel lengths (Leff 3 microm) with steep subthreshold characteristics (SS 120 mV/dec). The details of these contributions in the interpretation and regulation of electronic defect states in IGZO TFTs is presented, along with the support of device characteristics that are among the best reported in the literature. Additional material on a complementary technology which utilizes flash-lamp annealing of amorphous silicon will also be described. Flash-Lamp Annealed Polycrystalline Silicon (FLAPS) has realized n-channel and p-channel TFTs with promising results, and may provide an option for future applications with the highest performance demands. IGZO is rapidly emerging as the candidate to replace a-Si:H and address the performance needs of display products produced by large panel manufacturing.

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

NASA Astrophysics Data System (ADS)

Ball, James M.; Bouwer, Ricardo K. M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Domingo, Ester Buchaca; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D. C.; Anthopoulos, Thomas D.

2011-07-01

The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.

Investigation of Fluctuation-Induced Electron Transport in Hall Thrusters with a 2D Hybrid Code in the Azimuthal and Axial Coordinates

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Borelli, Noah; Cappelli, Mark; Gascon, Nicolas

2003-10-01

Most current Hall thruster simulation efforts employ either 1D (axial), or 2D (axial and radial) codes. These descriptions crucially depend on the use of an ad-hoc perpendicular electron mobility. Several models for the mobility are typically invoked: classical, Bohm, empirically based, wall-induced, as well as combinations of the above. Experimentally, it is observed that fluctuations and electron transport depend on axial distance and operating parameters. Theoretically, linear stability analyses have predicted a number of unstable modes; yet the nonlinear character of the fluctuations and/or their contribution to electron transport remains poorly understood. Motivated by these observations, a 2D code in the azimuthal and axial coordinates has been written. In particular, the simulation self-consistently calculates the azimuthal disturbances resulting in fluctuating drifts, which in turn (if properly correlated with plasma density disturbances) result in fluctuation-driven electron transport. The characterization of the turbulence at various operating parameters and across the channel length is also the object of this study. A description of the hybrid code used in the simulation as well as the initial results will be presented.

Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi

2013-12-04

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

Structured-gate organic field-effect transistors

NASA Astrophysics Data System (ADS)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

An improved pi/4-QPSK with nonredundant error correction for satellite mobile broadcasting

NASA Technical Reports Server (NTRS)

Feher, Kamilo; Yang, Jiashi

1991-01-01

An improved pi/4-quadrature phase-shift keying (QPSK) receiver that incorporates a simple nonredundant error correction (NEC) structure is proposed for satellite and land-mobile digital broadcasting. The bit-error-rate (BER) performance of the pi/4-QPSK with NEC is analyzed and evaluated in a fast Rician fading and additive white Gaussian noise (AWGN) environment using computer simulation. It is demonstrated that with simple electronics the performance of a noncoherently detected pi/4-QPSK signal in both AWGN and fast Rician fading can be improved. When the K-factor (a ratio of average power of multipath signal to direct path power) of the Rician channel decreases, the improvement increases. An improvement of 1.2 dB could be obtained at a BER of 0.0001 in the AWGN channel. This performance gain is achieved without requiring any signal redundancy and additional bandwidth. Three types of noncoherent detection schemes of pi/4-QPSK with NEC structure, such as IF band differential detection, baseband differential detection, and FM discriminator, are discussed. It is concluded that the pi/4-QPSK with NEC is an attractive scheme for power-limited satellite land-mobile broadcasting systems.

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I.

2015-06-28

The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffersmore » also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.« less

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrappedmore » around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.« less

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

NASA Astrophysics Data System (ADS)

Stieger, Christian; Szabo, Aron; Bunjaku, Teutë; Luisier, Mathieu

2017-07-01

Through advanced quantum mechanical simulations combining electron transport and phonon transport from first-principles, self-heating effects are investigated in n-type transistors with single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which have a direct influence on the increase in their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides.

Organic Power Electronics: Transistor Operation in the kA/cm2 Regime

PubMed Central

Klinger, Markus P.; Fischer, Axel; Kaschura, Felix; Widmer, Johannes; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Leo, Karl

2017-01-01

In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed. PMID:28303924

An AlN/Al 0.85Ga 0.15N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-22

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion,more » the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.« less

An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

2016-07-18

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminalmore » off-state drain current was adequately modeled with Frenkel-Poole emission.« less

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.

Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guan, He; Lv, Hongliang; Guo, Hui, E-mail: hguan@stu.xidian.edu.cn

2015-11-21

Impact ionization affects the radio-frequency (RF) behavior of high-electron-mobility transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this necessitates complex parameter extraction procedures for HEMT modeling. In this paper, an enhanced small-signal equivalent circuit model is developed to investigate the impact ionization, and an improved method is presented in detail for direct extraction of intrinsic parameters using two-step measurements in low-frequency and high-frequency regimes. The practicability of the enhanced model and the proposed direct parameter extraction method are verified by comparing the simulated S-parameters with published experimental data from an InAs/AlSb HEMT operating over a wide frequency range. The resultsmore » demonstrate that the enhanced model with optimal intrinsic parameter values that were obtained by the direct extraction approach can effectively characterize the effects of impact ionization on the RF performance of HEMTs.« less

Organic Power Electronics: Transistor Operation in the kA/cm2 Regime.

PubMed

Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Widmer, Johannes; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Leo, Karl

2017-03-17

In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm -2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm 2  V -1  s -1 , this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.

Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length.

PubMed

Cao, Xuan; Wu, Fanqi; Lau, Christian; Liu, Yihang; Liu, Qingzhou; Zhou, Chongwu

2017-02-28

Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10 5 , low-voltage operation, and good mobility of ∼15.03 cm 2 V -1 s -1 . These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics.

Impact of the intermixed phase and the channel network on the carrier mobility of nanostructured solar cells

NASA Astrophysics Data System (ADS)

Woellner, Cristiano F.; Freire, José A.

2016-02-01

We analyzed the impact of the complex channel network of donor and acceptor domains in nanostructured solar cells on the mobility of the charge carriers moving by thermally activated hopping. Particular attention was given to the so called intermixed phase, or interface roughness, that has recently been shown to promote an increase in the cell efficiency. The domains were obtained from a Monte Carlo simulation of a two-species lattice gas. We generated domain morphologies with controllable channel size and interface roughness. The field and density dependence of the carrier hopping mobility in different morphologies was obtained by solving a master equation. Our results show that the mobility decreases with roughness and increases with typical channel sizes. The deleterious effect of the roughness on the mobility is quite dramatic at low carrier densities and high fields. The complex channel network is shown to be directly responsible for two potentially harmful effects to the cell performance: a remarkable decrease of the mobility with increasing field and the accumulation of charge at the domains interface, which leads to recombination losses.

Optimization of transition-metal dichalcogenides based field-effecttransistors via contact engineering

NASA Astrophysics Data System (ADS)

Perera, Meeghage Madusanka

Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many "graphene-like" properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of a significant Schottky barrier at metal/TMD interface in most cases. The main goal of this study is to develop novel contact engineering strategies to achieve low-resistance Ohmic contacts. Our first approach is to use Ionic Liquid (IL) gating of metal contacted MoS2 FETs to achieve highly transparent tunneling contacts due to the strong band banding at metal/MoS2 interface. The substantially reduced contact resistance in ionic-liquid-gated bilayer and few-layer MoS 2 FETs results in an ambipolar behavior with high ON/OFF ratios, a near-ideal subthreshold swing, and significantly improved field-effect mobility. Remarkably, the mobility of a 3-nm-thick MoS2 FET with an IL gate was found to increase from ˜ 100 cm2V-1s-1 to ˜ 220 cm2V-1s-1 as the temperature decreased from 180 K to 77 K. This finding is in quantitative agreement with the true channel mobility measured by four-terminal measurement, suggesting that the mobility is predominantly limited by phonon-scattering. To further improve the contacts of TMD devices, graphene was used as work function tunable electrodes. In order to achieve low Schottky barrier height, both IL gating and surface charge transfer doping were used to tune the work function of graphene electrodes close to the conduction band edge of MoS 2. As a result, the performance of our graphene contacted MoS2 FETs is limited by the channel rather than contacts, which is further verified by four-terminal measurements. Finally, degenerately doped TMDs are used as drain/source electrodes to form 2D/2D van der Waals contacts, which are air and thermally stable. WSe2 devices with 2D/2D contacts and 0.01% Nb doped WSe2 channel show a high ON/OFF ratio and high field-effect mobility of 175 cm2 V-1S-1 at room temperature, which increases to 654 cm2V-1S-1 at cryogenic temperatures. As the doping concentration increases, both the ON/OFF ratio and mobility decrease. These contact engineering strategies overcome a major challenge in the development of electronics based on 2D materials beyond graphene.

Tunable Magneto-electric Subbands in Oxide Electron Waveguides

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Annadi, Anil; Lu, Shicheng; Lee, Hyungwoo; Lee, Jungwoo; Eom, Chang-Beom; Huang, Mengchen; Irvin, Patrick; Levy, Jeremy

Strontium titanate-based complex-oxide interfaces hold great promise for exploring new correlated electron physics and applications in quantum technologies. Previous reports show electron mobility can be greatly enhanced in 1D, while the 2D interface can contain 1D channels due to the presence of ferroelastic domains. In addition, carrier density measurements at the 2D interface by Shubnikov-de Haas (SdH) oscillations and Hall effect reveal a large discrepancy. Here we fabricate quasi-1D electron waveguides at the LaAlO3/SrTiO3 (LAO/STO) interface to locally probe the interface. The conductance of the waveguides is fully quantized, and the corresponding magneto-electric subbands can be depopulated by increasing the magnetic field. The 2D carrier densities (1012 cm-2) extracted from magnetic depopulation are consistent with measurements by SdH oscillations at the 2D interface. Our results show that magneto-electric subbands of quasi-1D electron waveguides can reproduce known SdH signatures without discrepancies in electron density, and suggest that 2D SdH measurements may also arise from quasi-1D channels. We gratefully acknowledge financial support from AFOSR (FA9550-12-1- 0057 (JL) and FA9550-12-1-0342 (CBE)), ONR N00014-15-1-2847 (JL), and NSF DMR-1234096 (CBE).

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyegal, Jang, E-mail: jjyegal@inu.ac.kr

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onsetmore » of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices.« less

Itinerant electrons in the Coulomb phase

NASA Astrophysics Data System (ADS)

Jaubert, L. D. C.; Piatecki, Swann; Haque, Masudul; Moessner, R.

2012-02-01

We study the interplay between magnetic frustration and itinerant electrons. For example, how does the coupling to mobile charges modify the properties of a spin liquid, and does the underlying frustration favor insulating or conducting states? Supported by Monte Carlo simulations, our goal is in particular to provide an analytical picture of the mechanisms involved. The models under consideration exhibit Coulomb phases in two and three dimensions, where the itinerant electrons are coupled to the localized spins via double exchange interactions. Because of the Hund coupling, magnetic loops naturally emerge from the Coulomb phase and serve as conducting channels for the mobile electrons, leading to doping-dependent rearrangements of the loop ensemble in order to minimize the electronic kinetic energy. At low electron density ρ, the double exchange coupling mainly tends to segment the very long loops winding around the system into smaller ones while it gradually lifts the extensive degeneracy of the Coulomb phase with increasing ρ. For higher doping, the results are strongly lattice dependent, displaying loop crystals with a given loop length for some specific values of ρ. By varying ρ, they can melt into different mixtures of these loop crystals, recovering extensive degeneracy in the process. Finally, we contrast this to the qualitatively different behavior of analogous models on kagome or triangular lattices.

Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors.

PubMed

Li, Yuzhi; Lan, Linfeng; Xiao, Peng; Sun, Sheng; Lin, Zhenguo; Song, Wei; Song, Erlong; Gao, Peixiong; Wu, Weijing; Peng, Junbiao

2016-08-03

Short-channel electronic devices several micrometers in length are difficult to implement by direct inkjet printing due to the limitation of position accuracy of the common inkjet printer system and the spread of functional ink on substrates. In this report, metal oxide thin-film transistors (TFTs) with channel lengths of 3.5 ± 0.7 μm were successfully fabricated with a common inkjet printer without any photolithography steps. Hydrophobic CYTOP coffee stripes, made by inkjet-printing and plasma-treating processes, were utilized to define the channel area of TFTs with channel lengths as short as ∼3.5 μm by dewetting the inks of the source/drain (S/D) precursors. Furthermore, by introduction of an ultrathin layer of PVA to modify the S/D surfaces, the spreading of precursor ink of the InOx semiconductor layer was well-controlled. The inkjet-printed short-channel TFTs exhibited a maximum mobility of 4.9 cm(2) V(-1) s(-1) and an on/off ratio of larger than 10(9). This approach of fabricating short-channel TFTs by inkjet printing will promote the large-area fabrication of short-channel TFTs in a cost-effective manner.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Performance analysis of the ALOHA protocol with replication in a fading channel for the Mobile Satellite Experiment

NASA Technical Reports Server (NTRS)

Clare, L. P.; Yan, T.-Y.

1985-01-01

The analysis of the ALOHA random access protocol for communications channels with fading is presented. The protocol is modified to send multiple contiguous copies of a message at each transmission attempt. Both pure and slotted ALOHA channels are considered. A general two state model is used for the channel error process to account for the channel fading memory. It is shown that greater throughput and smaller delay may be achieved using repetitions. The model is applied to the analysis of the delay-throughput performance in a fading mobile communications environment. Numerical results are given for NASA's Mobile Satellite Experiment.

A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

2015-11-01

This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

Measurement of multipath delay profile in land mobile satellite channels

NASA Technical Reports Server (NTRS)

Ikegami, Tetsushi; Arakaki, Yoshiya; Wakana, Hiromitsu; Suzuki, Ryutaro

1993-01-01

Mobile satellite communication channel has been evaluated mainly with fading statistics of signal. When bandwidth of transmitting signal becomes wider, frequency selectivity of fading becomes a significant factor of the channel. Channel characteristics, not only signal variation but multipath delay spread should be evaluated. A multipath measurement system is proposed and developed for mobile satellite applications. With this system and ETS-V satellite, multipath delay profiles are measured in various environments including Tokyo metropolis and Sapporo city at 1.5 GHz. Results show that the maximum excess delay is within 1 microsec and the maximum delay spread is 0.2 microsecs at elevation angles of 40 to 47 degrees. In wideband signal transmission of about 1 MHz and more, designers should consider the effect of selective fading due to the multipath of land mobile satellite channel.

Experimental studies of MOS inversion and accumulation layers: Quantum mechanical effects and mobility

NASA Astrophysics Data System (ADS)

Chindalore, Gowrishankar L.

The development of fast, multi-functional, and energy efficient integrated circuits, is made possible by aggressively scaling the gate lengths of the MOS devices into the sub-quarter micron regime. However, with the increasing cost of fabrication, there is a strong need for the development of reliable and accurate device simulation capabilities. The development of the theoretical models for simulators is guided by extensive experimental data, which enable an experimental verification of the models, and lead to a better understanding of the underlying physics. This dissertation presents the methodology and the results for one such experimental effort, where two important physical effects in the inversion layer and the accumulation layer of a MOS device, namely, the quantum mechanical (QM) effects and the carrier mobility are investigated. Accordingly, this dissertation has been divided into two parts, with the first part discussing the increase in the threshold voltage and the accumulation electrical oxide thickness due to QM effects. The second part discusses the methodology and the experimental results for the extraction of the majority carrier mobilities in the accumulation layers of a MOSFET. The continued scaling of the MOS gate length requires decreased gate oxide thickness (tox) and increased channel doping (NB) in order to improve device performance while suppressing the short- channel effects. The combination of the two result in large enough transverse electric fields to cause significant quantization of the carriers in the potential well at the Si/SiO2 interface. Hence, compared to the classical calculations (where the QM effects are ignored), the QM effects are found to lead to an increase in the experimental threshold voltage by approximately 100mV, and an overestimation of the physical oxide thickness by approximately 3-4A, in MOSFET devices with a gate oxide thickness and the doping level anticipated for technologies with sub-quarter micron gate lengths. Thus, the experimental results indicate the need for using accurate QM models for simulating sub-quarter micron devices. Carrier mobility is a fundamental semiconductor device transport parameter that has been extensively characterized for both electrons and holes in the silicon bulk and MOS inversion layers. Accumulation layer mobility (μacc) has become increasingly important as the MOS devices have scaled to deep submicron gate lengths, and much effort has been required to achieve increased drive current. However, very little experimental data has been reported for carrier mobility in the MOS accumulation layers (Sun80, Man89). Hence, in this research work, the accumulation layer mobilities were extracted using buried-channel MOSFETs for both the electrons and holes, and for a wide range of doping levels at temperatures ranging from 25C to 150C. The experimental μacc is found to be greater than the corresponding bulk and the inversion layer mobilities, at low to moderate effective fields. However, at very high effective fields, where phonon and surface roughness scattering are dominant, the mobility behavior is found to be very similar to that of the inversion carriers. The extensive set of experimental data will enable the development of accurate local accumulation mobility models for inclusion in 2-D device simulators.

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Localized Magnetic Moments with Tunable Spin Exchange in a Gas of Ultracold Fermions

NASA Astrophysics Data System (ADS)

Riegger, L.; Darkwah Oppong, N.; Höfer, M.; Fernandes, D. R.; Bloch, I.; Fölling, S.

2018-04-01

We report on the experimental realization of a state-dependent lattice for a two-orbital fermionic quantum gas with strong interorbital spin exchange. In our state-dependent lattice, the ground and metastable excited electronic states of 173Yb take the roles of itinerant and localized magnetic moments, respectively. Repulsive on-site interactions in conjunction with the tunnel mobility lead to spin exchange between mobile and localized particles, modeling the coupling term in the well-known Kondo Hamiltonian. In addition, we find that this exchange process can be tuned resonantly by varying the on-site confinement. We attribute this to a resonant coupling to center-of-mass excited bound states of one interorbital scattering channel.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

47 CFR 22.719 - Additional channel policy for rural radiotelephone stations.

Code of Federal Regulations, 2010 CFR

2010-10-01

...) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.719 Additional channel... spectrum-efficient technologies (i.e. BETRS) and by assigning the minimum number of channels necessary to..., two-way mobile and rural radiotelephone services. In the case of conventional rural radiotelephone...

Carrier recovery techniques on satellite mobile channels

NASA Technical Reports Server (NTRS)

Vucetic, B.; Du, J.

1990-01-01

An analytical method and a stored channel model were used to evaluate error performance of uncoded quadrature phase shift keying (QPSK) and M-ary phase shift keying (MPSK) trellis coded modulation (TCM) over shadowed satellite mobile channels in the presence of phase jitter for various carrier recovery techniques.

47 CFR 95.29 - Channels available.

Code of Federal Regulations, 2010 CFR

2010-10-01

... SERVICES General Mobile Radio Service (GMRS) § 95.29 Channels available. (a) For a base station, fixed station, mobile station, or repeater station (a GMRS station that simultaneously retransmits the... non-individual, a mobile station or a small base station operating in the simplex mode may transmit on...

Improving TCP Performance over Mobile Satellite Channels: The ACKPrime Approach

NASA Technical Reports Server (NTRS)

Scott, Keith; Czetty, Stephen

1998-01-01

Various issues associated with "Improving TCP Performance over Mobile Satellite Channels: The ACKPrime Approach" are presented in viewgraph form. Specific topics include: 1) TCP over mobile satellite links; 2) ways of breaking the control loop at the groundstation; 3) ACK implementation; and 4) ACK performance.

A mobile communication system providing integrated voice/data services over power limited satellite channels

NASA Astrophysics Data System (ADS)

Bose, Sanjay K.; Gordon, J. J.

The modeling and analysis of a system providing integrated voice/data services to mobile terminals over a power-limited satellite channel are discussed. The mobiles use slotted Aloha random access to send requests for channel assignments to a central station. For successful requests, the actual transmission of voice/data within a call is done using the channel assigned for this purpose by the central station. The satellite channel is assumed to be power limited. Taking into account the known burstiness of voice sources (which use a voice-activated switch), the central station overassigns channels so that the average total power is below the power limit of the satellite transponder. The performance of this model is analyzed. Certain simple, static control strategies for improving performance are also proposed.

Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

PubMed

Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar

2014-08-01

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

47 CFR 90.525 - Administration of interoperability channels.

Code of Federal Regulations, 2010 CFR

2010-10-01

... RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Regulations Governing the Licensing and Use of... meeting the requirements of § 90.523 may operate mobile or portable units on the Interoperability channels... Commission provided it holds a part 90 license. All persons operating mobile or portable units under this...

Terahertz radiation mixer

DOEpatents

Wanke, Michael C [Albuquerque, NM; Allen, S James [Santa Barbara, CA; Lee, Mark [Albuquerque, NM

2008-05-20

A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.

Variability of bed mobility in natural, gravel-bed channels and adjustments to sediment load at local and reach scales

Treesearch

Thomas E. Lisle; Jonathan M. Nelson; John Pitlick; Mary Ann Madej; Brent L. Barkett

2000-01-01

Abstract - Local variations in boundary shear stress acting on bed-surface particles control patterns of bed load transport and channel evolution during varying stream discharges. At the reach scale a channel adjusts to imposed water and sediment supply through mutual interactions among channel form, local grain size, and local flow dynamics that govern bed mobility...

Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride.

PubMed

He, Daowei; Qiao, Jingsi; Zhang, Linglong; Wang, Junya; Lan, Tu; Qian, Jun; Li, Yun; Shi, Yi; Chai, Yang; Lan, Wei; Ono, Luis K; Qi, Yabing; Xu, Jian-Bin; Ji, Wei; Wang, Xinran

2017-09-01

Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2- b ][1]benzothiophene (C 8 -BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm 2 /Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C 8 -BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.

Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride

PubMed Central

He, Daowei; Qiao, Jingsi; Zhang, Linglong; Wang, Junya; Lan, Tu; Qian, Jun; Li, Yun; Shi, Yi; Chai, Yang; Lan, Wei; Ono, Luis K.; Qi, Yabing; Xu, Jian-Bin; Ji, Wei; Wang, Xinran

2017-01-01

Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm2/Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties. PMID:28913429

Channel and terminal description of the ACTS mobile terminal

NASA Technical Reports Server (NTRS)

Abbe, B. S.; Agan, M. J.; Girardey, C. C.; Jedrey, T. C.

1994-01-01

The Advanced Communications Technology Satellite (ACTS) Mobile Terminal (AMT) is a proof-of-concept K/Ka-band mobile satellite communications terminal under development by NASA at JPL. Currently the AMT is undergoing systems integration and testing in preparation for a July 1993 ACTS launch and the subsequent commencement of mobile experiments in the fall of 1993. The AMT objectives are presented, followed by a discussion of the AMT communications channel and the mobile terminal's design and performance.

Channel and terminal description of the ACTS mobile terminal

NASA Technical Reports Server (NTRS)

Abbe, B. S.; Agan, M. J.; Girardey, C. C.; Jedrey, T. C.

1993-01-01

The Advanced Communications Technology Satellite (ACTS) Mobile Terminal (AMT) is a proof-of-concept K/Ka-band mobile satellite communications terminal under development by NASA at JPL. Currently the AMT is undergoing system integration and test in preparation for a July 1993 ACTS launch and the subsequent commencement of mobile experiments in the fall of 1993. The AMT objectives are presented followed by a discussion of the AMT communications channel and mobile terminal design and performance.

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.

PubMed

Abliz, Ablat; Huang, Chun-Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen-Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tailiang

2016-03-01

The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping. The field-effect mobility and gate bias stability of the bilayer structured devices have been improved. In this device structure, the hydrogenated ultrathin ZnO:H active layer (∼3 nm) could provide suitable carrier concentration and decrease the interface trap density, while thick pure-ZnO layer could control channel conductance. Based on this novel structure, a high field-effect mobility of 42.6 cm(2) V(-1) s(-1), a high on/off current ratio of 10(8) and a small subthreshold swing of 0.13 V dec(-1) have been achieved. Additionally, the bias stress stability of the bilayer structured devices is enhanced compared to the simple single channel layer ZnO device. These results suggest that the bilayer ZnO:H/ZnO TFTs have a great potential for low-cost thin-film electronics.

Large wood mobility processes in low-order Chilean river channels

NASA Astrophysics Data System (ADS)

Iroumé, Andrés; Mao, Luca; Andreoli, Andrea; Ulloa, Héctor; Ardiles, María Paz

2015-01-01

Large wood (LW) mobility was studied over several time periods in channel segments of four low-order mountain streams, southern Chile. All wood pieces found within the bankfull channels and on the streambanks extending into the channel with dimensions more than 10 cm in diameter and 1 m in length were measured and their position was referenced. Thirty six percent of measured wood pieces were tagged to investigate log mobility. All segments were first surveyed in summer and then after consecutive rainy winter periods. Annual LW mobility ranged between 0 and 28%. Eighty-four percent of the moved LW had diameters ≤ 40 cm and 92% had lengths ≤ 7 m. Large wood mobility was higher in periods when maximum water level (Hmax) exceeded channel bankfull depth (HBk) than in periods with flows less than HBk, but the difference was not statistically significant. Dimensions of moved LW showed no significant differences between periods with flows exceeding and with flows less than bankfull stage. Statistically significant relationships were found between annual LW mobility (%) and unit stream power (for Hmax) and Hmax/HBk. The mean diameter of transported wood pieces per period was significantly correlated with unit stream power for H15% and H50% (the level above which the flow remains for 15 and 50% of the time, respectively). These results contribute to an understanding of the complexity of LW mobilization processes in mountain streams and can be used to assess and prevent potential damage caused by LW mobilization during floods.

Channel simulation to facilitate mobile-satellite communications research

NASA Technical Reports Server (NTRS)

Davarian, Faramaz

1987-01-01

The mobile-satellite-service channel simulator, which is a facility for an end-to-end hardware simulation of mobile satellite communications links is discussed. Propagation effects, Doppler, interference, band limiting, satellite nonlinearity, and thermal noise have been incorporated into the simulator. The propagation environment in which the simulator needs to operate and the architecture of the simulator are described. The simulator is composed of: a mobile/fixed transmitter, interference transmitters, a propagation path simulator, a spacecraft, and a fixed/mobile receiver. Data from application experiments conducted with the channel simulator are presented; the noise converison technique to evaluate interference effects, the error floor phenomenon of digital multipath fading links, and the fade margin associated with a noncoherent receiver are examined. Diagrams of the simulator are provided.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

2014-12-01

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaNHEMTs

NASA Astrophysics Data System (ADS)

Cheng, Zhi-Qun; Cai, Yong; Liu, Jie; Zhou, Yu-Gang; Lau Kei, May; Chen, Kevin J.

2007-11-01

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm × 100 μm device showed very high-dynamic range with decent gain and noise figure.

Stencil Nano Lithography Based on a Nanoscale Polymer Shadow Mask: Towards Organic Nanoelectronics

PubMed Central

Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E. B.; Hyoung Lee, Wi; Wook Lee, Sang

2015-01-01

A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices. PMID:25959389

Stencil nano lithography based on a nanoscale polymer shadow mask: towards organic nanoelectronics.

PubMed

Yun, Hoyeol; Kim, Sangwook; Kim, Hakseong; Lee, Junghyun; McAllister, Kirstie; Kim, Junhyung; Pyo, Sengmoon; Sung Kim, Jun; Campbell, Eleanor E B; Hyoung Lee, Wi; Wook Lee, Sang

2015-05-11

A stencil lithography technique has been developed to fabricate organic-material-based electronic devices with sub-micron resolution. Suspended polymethylmethacrylate (PMMA) membranes were used as shadow masks for defining organic channels and top electrodes. Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. Electrical transport measurements showed that the electrical contacts of all devices were stable and the normalized contact resistances were much lower than previously studied organic FETs. Scaling effects, originating from the bulk space charge current, were investigated by analyzing the channel-length-dependent mobility and hysteresis behaviors. This novel lithography method provides a reliable means for studying the fundamental transport properties of organic materials at the nanoscale as well as enabling potential applications requiring the fabrication of integrated organic nanoelectronic devices.

Charge Transport in Semiconductor Nanocrystal Solids

NASA Astrophysics Data System (ADS)

Talapin, Dmitri; Shevchenko, Elena; Lee, Jong Soo; Urban, Jeffrey; Mitzi, David; Murray, Christopher

2007-03-01

Self-assembly of chemically-synthesized nanocrystals can yield complex long-range ordered structures which can be used as model systems for studying transport phenomena in low-dimensional materials [1]. Treatment of close-packed PbSe nanocrystal arrays with hydrazine enhanced exchange coupling between the nanocrystals and improved conductance by more than ten orders of magnitude compared to native nanocrystal films [2]. The conductivity of PbSe nanocrystal solids can be switched between n- and p-type transports by controlling the saturation of electronic states at nanocrystal surfaces. Nanocrystal arrays form the n- and p-channels of field-effect transistors with electron and hole mobilities of 2.5 cm^2V-1s-1 and 0.3 cm^2V-1s-1, respectively, and current modulation Ion/Ioff˜10^3-10^4. The field-effect mobility in PbSe nanocrystal arrays is higher than the mobility of organic transistors while the easy switch between n- and p-transport allows realization of complimentary circuits and p-n junctions for nanocrystal-based solar cells and thermoelectric devices. [1] E. V. Shevchenko, D. V. Talapin, N. A. Kotov, S. O'Brien, C. B. Murray. Nature 439, 55 (2006). [2] D. V. Talapin, C. B. Murray. Science 310, 86 (2005).

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D.

2007-11-01

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263mA/mm are obtained for 1μm gate-length Al2O3 MOS-HEMTs with 3 and 6nm thick gate oxide, respectively. C-V characteristic shows negligible hysteresis and frequency dispersion. The gate leakage current density of the MOS-HEMTs is 3-5 orders of magnitude lower than the conventional HEMTs under similar bias conditions. The drain current on-off ratio of MOS-HEMTs is ˜3×103 with a subthreshold swing of 90mV/decade. A maximum cutoff frequency (fT) of 27.3GHz and maximum oscillation frequency (fmax) of 39.9GHz and an effective channel mobility of 4250cm2/Vs are measured for the 1μm gate-length Al2O3 MOS-HEMT with 6nm gate oxide. Hooge's constant measured by low frequency noise spectral density characterization is 3.7×10-5 for the same device.

Land Mobile Satellite Service (LMSS) channel simulator: An end-to-end hardware simulation and study of the LMSS communications links

NASA Technical Reports Server (NTRS)

Salmasi, A. B. (Editor); Springett, J. C.; Sumida, J. T.; Richter, P. H.

1984-01-01

The design and implementation of the Land Mobile Satellite Service (LMSS) channel simulator as a facility for an end to end hardware simulation of the LMSS communications links, primarily with the mobile terminal is described. A number of studies are reported which show the applications of the channel simulator as a facility for validation and assessment of the LMSS design requirements and capabilities by performing quantitative measurements and qualitative audio evaluations for various link design parameters and channel impairments under simulated LMSS operating conditions. As a first application, the LMSS channel simulator was used in the evaluation of a system based on the voice processing and modulation (e.g., NBFM with 30 kHz of channel spacing and a 2 kHz rms frequency deviation for average talkers) selected for the Bell System's Advanced Mobile Phone Service (AMPS). The various details of the hardware design, qualitative audio evaluation techniques, signal to channel impairment measurement techniques, the justifications for criteria of different parameter selection in regards to the voice processing and modulation methods, and the results of a number of parametric studies are further described.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; Wang, Danna; Shinobu, Onoda; Ohshima, Takeshi

2018-04-01

Radiation-induced charge trapping and interface traps in n-channel ZnO thin film transistors are characterised as a function of total dose and irradiation bias following exposure to gamma-rays. Devices were irradiated up to ∼60 kGy(SiO?) and the electrical characteristic exhibits two distinct regimes. In the first regime, up to a total dose of 40 kGy(SiO?), the threshold voltage increases positively. However, in the second regime with irradiation greater than 40 kGy(SiO?), the threshold voltage moves in the opposite direction. This reversal of threshold voltage is attributed to the influence of the radiation-induced interface and oxide- charge, in which both have opposite polarity, on the electrical performance of the transistors. In the first regime, the generation of the oxide- charge is initially greater than the density of interface traps and caused a positive shift. In the second regime, when the total doses were greater than 40 kGy(SiO?), the radiation-induced interface traps are greater than the density of oxide- charge and caused the threshold voltage to switch direction. Further, the generated interface traps contributed to the degradation of the effective channel mobility, whereas the density of traps at the grain-boundaries did not increase significantly upon irradiation. Isothermal annealing of the devices at 363 K results in a reduction in the trap density and an improvement of the effective channel mobility to ∼90% of its pre-irradiation value.

Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Sarkar, K.; Pal, B.; Kumar, Aparabal; Das, Anish; Banerji, P.

2018-05-01

In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers' method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

PubMed

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

2016-06-01

We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

Global coverage Mobile Satellite Systems: System availability versus channel propagation impairments

NASA Technical Reports Server (NTRS)

Sforza, M.; Buonomo, S.; Poiaresbaptista, J. P. V.

1993-01-01

Mobile Satellite Systems (MSS) in Highly Elliptical (HEO) and circular Earth orbits at Medium (MEO) and Low (LEO) altitudes have been intensively studied in the last few years as an effective means of providing global communication services. Such global coverage MSS networks are also expected to mitigate typical channel impairments usually encountered in geostationary Land Mobile Satellite (LMS) systems. In the design stages of these satellite networks, information regarding the mobile propagation channel is needed to assess the overall link availability versus elevation angle and environmental scenarios. For multisatellite LMS configurations, the mobile user on the Earth surface sees, at any given time, more than one satellite of the constellation. In our paper, it is shown that, under certain working assumptions regarding the statistics of the propagation channel, an improvement of the link availability may be achieved through the use of a multisatellite constellation. The analyses have been carried out using the European Space Agency (ESA) LMS propagation data base which presently covers a wide range of elevation angles and environmental scenarios.

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors.

PubMed

Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen-Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C; Anthopoulos, Thomas D; Bradley, Donal D C

2018-06-06

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In 2 O 3 /ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm 2 /(V s)) with appreciable current on/off ratios (≈10 3 ) and an external quantum efficiency of 2 × 10 -2 % at 700 cd/m 2 . The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Hydraulic, geomorphic, and trout habitat conditions of the Lake Fork of the Gunnison River in Hinsdale County, Lake City, Colorado, Water Years 2010-2011

USGS Publications Warehouse

Williams, Cory A.; Richards, Rodney J.; Schaffrath, Keelin R.

2015-01-01

Sediment mobility is an important process for flushing fine sediments from within the gravel frameworks. Evaluations of channel and flow characteristics at cross-section locations 2–8 show a range of streambed mobility. In general, boundary shear stress and streambed mobility increase with increases in streamflow. Within the cross sections, the greatest boundary shear stress occurs towards the center of the channel. Reach-scale assessment of sediment mobility in the lower reach shows increased streambed mobility. This is due in part to smaller grain sizes in the lower reach, but may also reflect the greater extent of channel alterations, specifically the temporary berms constructed by CDOT in the late 1980s and 1990s, present in this reach.

FD/DAMA Scheme For Mobile/Satellite Communications

NASA Technical Reports Server (NTRS)

Yan, Tsun-Yee; Wang, Charles C.; Cheng, Unjeng; Rafferty, William; Dessouky, Khaled I.

1992-01-01

Integrated-Adaptive Mobile Access Protocol (I-AMAP) proposed to allocate communication channels to subscribers in first-generation MSAT-X mobile/satellite communication network. Based on concept of frequency-division/demand-assigned multiple access (FD/DAMA) where partition of available spectrum adapted to subscribers' demands for service. Requests processed, and competing requests resolved according to channel-access protocol, or free-access tree algorithm described in "Connection Protocol for Mobile/Satellite Communications" (NPO-17735). Assigned spectrum utilized efficiently.

Method for Evaluation of Outage Probability on Random Access Channel in Mobile Communication Systems

NASA Astrophysics Data System (ADS)

Kollár, Martin

2012-05-01

In order to access the cell in all mobile communication technologies a so called random-access procedure is used. For example in GSM this is represented by sending the CHANNEL REQUEST message from Mobile Station (MS) to Base Transceiver Station (BTS) which is consequently forwarded as an CHANNEL REQUIRED message to the Base Station Controller (BSC). If the BTS decodes some noise on the Random Access Channel (RACH) as random access by mistake (so- called ‘phantom RACH') then it is a question of pure coincidence which èstablishment cause’ the BTS thinks to have recognized. A typical invalid channel access request or phantom RACH is characterized by an IMMEDIATE ASSIGNMENT procedure (assignment of an SDCCH or TCH) which is not followed by sending an ESTABLISH INDICATION from MS to BTS. In this paper a mathematical model for evaluation of the Power RACH Busy Threshold (RACHBT) in order to guaranty in advance determined outage probability on RACH is described and discussed as well. It focuses on Global System for Mobile Communications (GSM) however the obtained results can be generalized on remaining mobile technologies (ie WCDMA and LTE).

Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Ming; Ji, Qizheng; Gao, Zhiliang; Zhang, Shufeng; Lin, Zhaojun; Yuan, Yafei; Song, Bo; Mei, Gaofeng; Lu, Ziwei; He, Jihao

2017-11-01

For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility.

47 CFR 90.625 - Other criteria to be applied in assigning channels for use in conventional systems of communication.

Code of Federal Regulations, 2010 CFR

2010-10-01

... certifies on its application that a channel will be loaded to 70 mobile stations, that channel will be made... COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES... Policies Governing the Processing of Applications and the Selection and Assignment of Frequencies for Use...

77 FR 38210 - Channel Spacing and Bandwidth Limitations for Certain Economic Area (EA)-Based 800 MHz...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-27

... Specialized Mobile Radio Licensees AGENCY: Federal Communications Commission. ACTION: Final rule; announcement... Specialized Mobile Radio (SMR) licensees to exceed a legacy channel spacing requirement and bandwidth...

Evolution of Naval Radio-Electronics and Contributions of the Naval Research Laboratory. Revision

DTIC Science & Technology

1979-01-01

obtained when used in land mobile adjacent channels were studied , as well as the communication systems with one fixed terminal changes in performance...Theoretical studies had indicated that charts show contours of signal-to-jamming ratios, the very-low frequencies would suffer some also on a worldwide...in the 1300-MHz The Model SG radar, in the development of which NRL region. The results of the NRL study of the participated, is shown on a platform

InAs-based Hterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Electrothermal flow effects in insulating (electrodeless) dielectrophoresis systems.

PubMed

Hawkins, Benjamin G; Kirby, Brian J

2010-11-01

We simulate electrothermally induced flow in polymeric, insulator-based dielectrophoresis (iDEP) systems with DC-offset, AC electric fields at finite thermal Péclet number, and we identify key regimes where electrothermal (ET) effects enhance particle deflection and trapping. We study a single, two-dimensional constriction in channel depth with parametric variations in electric field, channel geometry, fluid conductivity, particle electrophoretic (EP) mobility, and channel electroosmotic (EO) mobility. We report the effects of increasing particle EP mobility, channel EO mobility, and AC and DC field magnitudes on the mean constriction temperature and particle behavior. Specifically, we quantify particle deflection and trapping, referring to the deviation of particles from their pathlines due to dielectrophoresis as they pass a constriction and the stagnation of particles due to negative dielectrophoresis near a constriction, respectively. This work includes the coupling between fluid, heat, and electromagnetic phenomena via temperature-dependent physical parameters. Results indicate that the temperature distribution depends strongly on the fluid conductivity and electric field magnitude, and particle deflection and trapping depend strongly on the channel geometry. Electrothermal (ET) effects perturb the EO flow field, creating vorticity near the channel constriction and enhancing the deflection and trapping effects. ET effects alter particle deflection and trapping responses in insulator-based dielectrophoresis devices, especially at intermediate device aspect ratios (2 ≤ r ≤ 7) in solutions of higher conductivity (σ m ≥ 1 × 10(-3)S/m). The impact of ET effects on particle deflection and trapping are diminished when particle EP mobility or channel EO mobility is high. In almost all cases, ET effects enhance negative dielectrophoretic particle deflection and trapping phenomena. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of fade distribution on a mobile satellite downlink and uplink performance in a frequency reuse cellular configuration

NASA Technical Reports Server (NTRS)

Boutin, Karl; Lecours, Michel; Pelletier, Marcel; Delisle, Gilles Y.

1990-01-01

In a mobile satellite system with a frequency reuse cellular configuration, significant co-channel interference can be experienced due to the antenna sidelobe level. The signal will be subjected not only to its own fading, but also to the effect of the varying degree of fading on co-channel interferer, and this interference will behave differently in the up and in the down link. This paper presents a quantitative evaluation of the combined effects of fades and co-channel interference on a mobile satellite link.

Mobile Collection and Automated Interpretation of EEG Data

NASA Technical Reports Server (NTRS)

Mintz, Frederick; Moynihan, Philip

2007-01-01

A system that would comprise mobile and stationary electronic hardware and software subsystems has been proposed for collection and automated interpretation of electroencephalographic (EEG) data from subjects in everyday activities in a variety of environments. By enabling collection of EEG data from mobile subjects engaged in ordinary activities (in contradistinction to collection from immobilized subjects in clinical settings), the system would expand the range of options and capabilities for performing diagnoses. Each subject would be equipped with one of the mobile subsystems, which would include a helmet that would hold floating electrodes (see figure) in those positions on the patient s head that are required in classical EEG data-collection techniques. A bundle of wires would couple the EEG signals from the electrodes to a multi-channel transmitter also located in the helmet. Electronic circuitry in the helmet transmitter would digitize the EEG signals and transmit the resulting data via a multidirectional RF patch antenna to a remote location. At the remote location, the subject s EEG data would be processed and stored in a database that would be auto-administered by a newly designed relational database management system (RDBMS). In this RDBMS, in nearly real time, the newly stored data would be subjected to automated interpretation that would involve comparison with other EEG data and concomitant peer-reviewed diagnoses stored in international brain data bases administered by other similar RDBMSs.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Understanding channel and contact effects on transport in 1-dimensional nanotransistors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swartzentruber, Brian S.; Delker, Collin James; Yoo, Jinkyoung

Nanowire transistors are generally formed by metal contacts to a uniformly doped nanowire. The transistor can be modeled as a series combination of resistances from both the channel and the contacts. In this study, a simple model is proposed consisting of a resistive channel in series with two Schottky metal-semiconductor contacts modeled using the WKB approximation. This model captures several phenomena commonly observed in nanowire transistor measurements, including the mobility as a function of gate potential, mobility reduction with respect to bulk mobility, and non-linearities in output characteristics. For example, the maximum measured mobility as a function of gate voltagemore » in a nanowire transistor can be predicted based on the semiconductor bulk mobility in addition to barrier height and other properties of the contact. The model is then extended to nanowires with axial p-n junctions having an inde- pendent gate over each wire segment by splitting the channel resistance into a series component for each doping segment. Finally, the contact-channel model is applied to low-frequency noise analysis in nanowire devices, where the noise can be generated in both the channel and the contacts. Because contacts play a major, yet often neglected, role in nanowire transistor operation, they must be accounted for in order to extract meaningful parameters from I-V and noise measurements.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tournadre, Grégoire de, E-mail: gregoire.de-tournadre@univ-reims.fr; Reisdorffer, Frédéric; Simonetti, Olivier

A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2′,3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottom-contact (coplanar) TFTs based onmore » the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 Ω cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm{sup 2} V{sup −1} s{sup −1} and 1.1 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics.« less

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

DOE PAGES

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...

2017-09-26

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer andmore » the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.« less

Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

2018-03-01

The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

NASA Astrophysics Data System (ADS)

De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

PubMed

De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm 2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

PubMed

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

Analysis of electronic structure of amorphous InGaZnO/SiO{sub 2} interface by angle-resolved X-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ueoka, Y.; Ishikawa, Y.; Maejima, N.

2013-10-28

The electronic structures of amorphous indium gallium zinc oxide (a-IGZO) on a SiO{sub 2} layers before and after annealing were observed by constant final state X-ray photoelectron spectroscopy (CFS-XPS) and X-ray adsorption near-edge structure spectroscopy (XANES). From the results of angle-resolved CFS-XPS, the change in the electronic state was clearly observed in the a-IGZO bulk rather than in the a-IGZO/SiO{sub 2} interface. This suggests that the electronic structures of the a-IGZO bulk strongly affected the thin-film transistor characteristics. The results of XANES indicated an increase in the number of tail states upon atmospheric annealing (AT). We consider that the increasemore » in the number of tail states decreased the channel mobility of AT samples.« less

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

A New Hybrid Scheme for Preventing Channel Interference and Collision in Mobile Networks

NASA Astrophysics Data System (ADS)

Kim, Kyungjun; Han, Kijun

This paper proposes a new hybrid scheme based on a given set of channels for preventing channel interference and collision in mobile networks. The proposed scheme is designed for improving system performance, focusing on enhancement of performance related to path breakage and channel interference. The objective of this scheme is to improve the performance of inter-node communication. Simulation results from this paper show that the new hybrid scheme can reduce a more control message overhead than a conventional random scheme.

A wideband channel model for land mobile satellite systems

NASA Technical Reports Server (NTRS)

Jahn, Axel; Buonomo, Sergio; Sforza, Mario; Lutz, Erich

1995-01-01

A wideband channel model for Land Mobile Satellite (LMS) services is presented which characterizes the time-varying transmission channel between a satellite and a mobile user terminal. The channel model statistic parameters are the results of fitting procedures to measured data. The data used for fitting have a time resolution of 33 ns corresponding to a bandwidth of 30 MHz. Thus, the model is capable to characterize the channel behaviour for a wide range of services e.g., voice transmission, digital audio broadcasting (DAB), and spread spectrum modulation schemes. The model is presented for different environments and scenarios. The model is derived for a quasi-mobile user with hand-held terminal being in two different environments: rural and urban. The parameters needed for the description are (a) the number of echoes, (b) the distribution of the echo power, and (c) the distribution of the echo delay. It is shown that the direct path follows a Rician distribution whereas the reflected paths are Rayleigh/lognormal distributed. The parameters are given for an elevation angle of 25 deg.

An EKV-based high voltage MOSFET model with improved mobility and drift model

NASA Astrophysics Data System (ADS)

Chauhan, Yogesh Singh; Gillon, Renaud; Bakeroot, Benoit; Krummenacher, Francois; Declercq, Michel; Ionescu, Adrian Mihai

2007-11-01

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270-3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] especially in the quasi-saturation region of output characteristics.

Electron spin resonance observation of charge carrier concentration in organic field-effect transistors during device operation

NASA Astrophysics Data System (ADS)

Tanaka, Hisaaki; Hirate, Masataka; Watanabe, Shun-ichiro; Kaneko, Kazuaki; Marumoto, Kazuhiro; Takenobu, Taishi; Iwasa, Yoshihiro; Kuroda, Shin-ichi

2013-01-01

Charge carrier concentration in operating organic field-effect transistors (OFETs) reflects the electric potential within the channel, acting as a key quantity to clarify the operation mechanism of the device. Here, we demonstrate a direct determination of charge carrier concentration in the operating devices of pentacene and poly(3-hexylthiophene) (P3HT) by field-induced electron spin resonance (FI-ESR) spectroscopy. This method sensitively detects polarons induced by applying gate voltage, giving a clear FI-ESR signal around g=2.003 in both devices. Upon applying drain-source voltage, carrier concentration decreases monotonically in the FET linear region, reaching about 70% of the initial value at the pinch-off point, and stayed constant in the saturation region. The observed results are reproduced well from the theoretical potential profile based on the gradual channel model. In particular, the carrier concentration at the pinch-off point is calculated to be β/(β+1) of the initial value, where β is the power exponent in the gate voltage (Vgs) dependence of the mobility (μ), expressed as μ∝Vgsβ-2, providing detailed information of charge transport. The present devices show β=2.6 for the pentacene and β=2.3 for the P3HT cases, consistent with those determined by transfer characteristics. The gate voltage dependence of the mobility, originating from the charge trapping at the device interface, is confirmed microscopically by the motional narrowing of the FI-ESR spectra.

Study on statistical models for land mobile satellite channel

NASA Astrophysics Data System (ADS)

Wang, Ying; Hu, Xiulin

2005-11-01

Mobile terminals in a mobile satellite communication system cause the radio propagation channel to vary with time. So it is necessary to study the channel models in order to estimate the behavior of satellite signal propagation. A lot of research work have been done on the L- and S- bands. With the development of gigabit data transmissions and multimedia applications in recent years, the Ka-band studies gain much attention. Non-geostationary satellites are also in research because of its low propagation delay and low path loss. The future satellite mobile communication systems would be integrated into the other terrestrial networks in order to enable global, seamless and ubiquitous communications. At the same time QoS-technologies are studied to satisfy users' different service classes, such as mobility and resource managements. All the above make a suitable efficient channel model face new challenges. This paper firstly introduces existed channel models and analyzes their respective characteristics. Then we focus on a general model presented by Xie YongJun, which is popular under any environment and describes difference through different parameter values. However we believe that it is better to take multi-state Markov model as category in order to adapt to different environments. So a general model based on Markov process is presented and necessary simulation is carried out.

Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.; Mueller, Wolfgang

2008-01-01

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter.

PubMed

Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon

2016-06-03

We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

NASA Astrophysics Data System (ADS)

Liau, Leo Chau-Kuang; Lin, Yun-Guo

2015-01-01

Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

Enhancement of electrical transport modulation in epitaxial VO2 nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Tanaka, Hidekazu; Chikanari, Masashi; Kanki, Teruo

Strongly correlated system vanadium dioxide VO2 has attracted widespread concerns from researchers as an exciting electronic material, due to the many intriguing features, especially metal-insulator transition (MIT) in vicinity of room temperature. In this work, we report a diverse geometry for high sensitivity in the transport modulation. By taking advantage of nanometer scale channel, instead of thin film channels, we demonstrated the enhancement of resistance modulation by applying gate voltage. Also we designed the insulating gate, consisting of high-k material Ta2O5/organic polymer parylene-C hybrid insulator. Such as this hybrid gate dielectric would effectively reduce interface deterioration of active channel oxide and provide sufficient carrier density. Moreover, benefited from the nanometer scale channel, the VO2 nanowire-based transistor could deliver a resistance modulation ratio over 8.5%, which are about 10 folds higher than that of the film case. Furthermore, this result is explained that in spite of the stronger field distribution in the edge parts of VO2 nanowire channel yielded little carrier density, the generated mobility modulation would biquadratic increase according to Brinkman-Rice picture as new finding.

``Just Another Distribution Channel?''

NASA Astrophysics Data System (ADS)

Lemstra, Wolter; de Leeuw, Gerd-Jan; van de Kar, Els; Brand, Paul

The telecommunications-centric business model of mobile operators is under attack due to technological convergence in the communication and content industries. This has resulted in a plethora of academic contributions on the design of new business models and service platform architectures. However, a discussion of the challenges that operators are facing in adopting these models is lacking. We assess these challenges by considering the mobile network as part of the value system of the content industry. We will argue that from the perspective of a content provider the mobile network is ‘just another’ distribution channel. Strategic options available for the mobile communication operators are to deliver an excellent distribution channel for content delivery or to move upwards in the value chain by becoming a content aggregator. To become a mobile content aggregator operators will have to develop or acquire complementary resources and capabilities. Whether this strategic option is sustainable remains open.

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Development of p-type oxide semiconductors based on tin oxide and its alloys: application to thin film transistors

NASA Astrophysics Data System (ADS)

Barros, Ana Raquel Xarouco de

In spite of the recent p-type oxide TFTs developments based on SnOx and CuxO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type, especially when comparing their field-effect mobility values, which are at least one order of magnitude higher on n-type oxide TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present thesis focuses on the study and optimization of p-type thin film transistors based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped tin oxide, Cu-doped SnOx and In-doped SnO2.

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

An evaluation of krypton propellant in Hall thrusters

NASA Astrophysics Data System (ADS)

Linnell, Jesse Allen

Due to its high specific impulse and low price, krypton has long sparked interest as an alternate Hall thruster propellant. Unfortunately at the moment, krypton's relatively poor performance precludes it as a legitimate option. This thesis presents a detailed investigation into krypton operation in Hall thrusters. These findings suggest that the performance gap can be decreased to 4% and krypton can finally become a realistic propellant option. Although krypton has demonstrated superior specific impulse, the xenon-krypton absolute efficiency gap ranges between 2 and 15%. A phenomenological performance model indicates that the main contributors to the efficiency gap are propellant utilization and beam divergence. Propellant utilization and beam divergence have relative efficiency deficits of 5 and 8%, respectively. A detailed characterization of internal phenomena is conducted to better understand the xenon-krypton efficiency gap. Krypton's large beam divergence is found to be related to a defocusing equipotential structure and a weaker magnetic field topology. Ionization processes are shown to be linked to the Hall current, the magnetic mirror topology, and the perpendicular gradient of the magnetic field. Several thruster design and operational suggestions are made to optimize krypton efficiency. Krypton performance is optimized for discharge voltages above 500 V and flow rates corresponding to an a greater than 0.015 mg/(mm-s), where alpha is a function of flow rate and discharge channel dimensions (alpha = m˙alphab/Ach). Performance can be further improved by increasing channel length or decreasing channel width for a given flow rate. Also, several magnetic field design suggestions are made to enhance ionization and beam focusing. Several findings are presented that improve the understanding of general Hall thruster physics. Excellent agreement is shown between equipotential lines and magnetic field lines. The trim coil is shown to enhance beam focusing, ionization processes, and electron dynamics. Electron mobility and the Hall parameter are studied and compared to different mobility models. Azimuthal electron current is studied using a fluid and particle drift approach. Analyses of several magnetic field features are conducted and simple tools are suggested for the development of future Hall thrusters. These findings have strong implications for future Hall thruster design, lifetimes, and modeling.

Charge injection and transport in regioregular poly(3-hexylthiophene)-based field-effect transistors

NASA Astrophysics Data System (ADS)

Singh, Kumar Abhishek

Organic (semi)conductors are poised as never before to transform the electronics industry towards unprecedented versatility. In this thesis, we have taken an experimental approach to address the effect of nanostructure and the energy-level alignment at the metal/polymer interface on charge injection and transport in regioregular poly(3-hexylthiophene) (rr-P3HT) based field-effect transistors (FETs). We found that the mobility and contact resistance in rr-P3HT based FETs show an inverse relationship, and that both properties were affected by the nanostructure of the polymer proving that that charge injection, in addition to charge transport, is significantly affected by the bulk-transport properties of rr-P3HT. Thereafter we successfully recessed the contacts into the SiO 2 dielectric to minimize the effect of the step between the metal contacts and the dielectric on the polymer nanomorphology. The planarization of the devices resulted in a dramatic improvement of the nanomorphology of rr-P3HT reflected as an improvement in charge injection as evident from the decrease in contact resistance values. Gold contacts were also modified by treating them with self-assembled monolayers (SAMs) of aromatic thiols. Electron-poor (electron-rich) SAMs resulted in an increase (decrease) in the Au work function because of the electron-withdrawing (-donating) tendency of the polar molecules. The change in metal work-function by SAM modification also resulted in a modulation of the contact resistance. While there was a clear effect on charge injection upon modification of the contacts, either by SAMs or planarization, the mobility values improved only in the short-channel devices indicating that at longer channels the OFETs are channel-limited because of grain-boundary limited charge transport. Photoemission spectroscopy was also conducted to investigate the energy level alignment at bottom-contact (polymer-on-metal) and top-contact (metal-on-polymer) geometries for high work function metals (Au, Pt) and rr-P3HT. The Fermi energy level was found to be pinned at the polaronic energy level within the band gap of rr-P3HT resulting in barrier-less interfaces for charge injection. Photoemission spectroscopy studies of the metal-on-polymer configuration also provided insight into the chemical structure of the metal/polymer interface. Platinum was found to react with sulfur from the thiophene ring whereas Au was found to be relatively unreactive.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

Hard Fusion Based Spectrum Sensing over Mobile Fading Channels in Cognitive Vehicular Networks

PubMed Central

Hao, Li; Ni, Dadong; Tran, Quang Thanh

2018-01-01

An explosive growth in vehicular wireless applications gives rise to spectrum resource starvation. Cognitive radio has been used in vehicular networks to mitigate the impending spectrum starvation problem by allowing vehicles to fully exploit spectrum opportunities unoccupied by licensed users. Efficient and effective detection of licensed user is a critical issue to realize cognitive radio applications. However, spectrum sensing in vehicular environments is a very challenging task due to vehicle mobility. For instance, vehicle mobility has a large effect on the wireless channel, thereby impacting the detection performance of spectrum sensing. Thus, gargantuan efforts have been made in order to analyze the fading properties of mobile radio channel in vehicular environments. Indeed, numerous studies have demonstrated that the wireless channel in vehicular environments can be characterized by a temporally correlated Rayleigh fading. In this paper, we focus on energy detection for spectrum sensing and a counting rule for cooperative sensing based on Neyman-Pearson criteria. Further, we go into the effect of the sensing and reporting channel conditions on the sensing performance under the temporally correlated Rayleigh channel. For local and cooperative sensing, we derive some alternative expressions for the average probability of misdetection. The pertinent numerical and simulating results are provided to further validate our theoretical analyses under a variety of scenarios. PMID:29415452

Experimental study of the helicopter-mobile radioelectrical channel and possible extension to the satellite-mobile channel

NASA Astrophysics Data System (ADS)

Blanchetiere-Ciarletti, V.; Sylvain, M.; Lemenn, P.

1994-07-01

The use of satellite seems to be an answer to the radioelectrical covering problem for the mobile communications, particularly in the low populated areas. Frequency bands at 1.5 and 2.5 GHz have been dedicated to these future services. Satellite-mobile links will be much more affected by propagation phenomena than the existing links between satellites and fixed stations. The reasons for that are twofold: The probable use of LEO (Low-Earth-Orbit) satellites instead of GEO; such satellites will have to be received at relatively low elevation to limit their number; the use of mobile communication terminals with small and non directive antennas that must work in various environments instead of terrestrian stations located at carefully chosen places and equipped with large diameter paraboloids. These propagation phenomena mainly consist in the fading of the signal level (shadowing of the link), and a frequency selective fading due to multipath propagation. The experience run by C.R.P.E. is aimed at a better understanding of the satellite-mobile propagation channel at fixed frequency as well as on a large band. In this paper, we discuss preliminary results from a series of propagation measurements performed (by lack of any experimental satellite) on an experimental radio link at 1.45 GHz on a of 20 MHz bandwidth between a helicopter flying at a height of 2 km and a mobile receiver. The whole experiment has been run in a rural environment in Brittany (France). In a first part, we illustrate the quality of the data collected during the experiment on a typical case study and give a possible physical interpretation of the observed phenomena. Then we present statistical results concerning the various characteristics (attenuation and delay spreads) of the propagation channel. Finally, we discuss the problem of using a helicopter (flying at a height of 2 km) as a substitute for a satellite at about 1000 km and try to estimate to what extent it is possible to use the data collected during this experiment to characterize the satellite-mobile channel. To do that, both the helicopter-mobile and the satellite-mobile propagation channels are simulated under the same environmental conditions.

Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Jain, Prateek; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-08-01

We present a surface potential based analytical model for double gate tunnel field effect transistor (DGTFET) for the current, terminal charges, and terminal capacitances. The model accounts for the effect of the mobile charge in the channel and captures the device physics in depletion as well as in the strong inversion regime. The narrowing of the tunnel barrier in the presence of mobile charges in the channel is incorporated via modeling of the inverse decay length, which is constant under channel depletion condition and bias dependent under inversion condition. To capture the ambipolar current behavior in the model, tunneling at the drain junction is also included. The proposed model is validated against TCAD simulation data and it shows close match with the simulation data.

Preliminary investigation of a water-based method for fast integrating mobility spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spielman, Steven R.; Hering, Susanne V.; Kuang, Chongai

A water-based condensational growth channel was developed for imaging mobility-separated particles within a parallel plate separation channel of the Fast Integrated Mobility Spectrometer (FIMS). Reported are initial tests of that system, in which the alcohol condenser of the FIMS was replaced by a water-based condensational growth channel. Tests with monodispersed sodium chloride aerosol verify that the water-condensational growth maintained the laminar flow, while providing sufficient growth for particle imaging. Particle positions mapped onto particle mobility, in accordance with theoretical expectations. Particles ranging in size from 12 nm to 100 nm were counted with the same efficiency as with a butanol-based ultrafine particlemore » counter, once inlet and line losses were taken into account.« less

Preliminary investigation of a water-based method for fast integrating mobility spectrometry

DOE PAGES

Spielman, Steven R.; Hering, Susanne V.; Kuang, Chongai; ...

2017-06-06

A water-based condensational growth channel was developed for imaging mobility-separated particles within a parallel plate separation channel of the Fast Integrated Mobility Spectrometer (FIMS). Reported are initial tests of that system, in which the alcohol condenser of the FIMS was replaced by a water-based condensational growth channel. Tests with monodispersed sodium chloride aerosol verify that the water-condensational growth maintained the laminar flow, while providing sufficient growth for particle imaging. Particle positions mapped onto particle mobility, in accordance with theoretical expectations. Particles ranging in size from 12 nm to 100 nm were counted with the same efficiency as with a butanol-based ultrafine particlemore » counter, once inlet and line losses were taken into account.« less

Use of side-chain for rational design of n-type diketopyrrolopyrrole-based conjugated polymers: what did we find out?

PubMed

Kanimozhi, Catherine; Yaacobi-Gross, Nir; Burnett, Edmund K; Briseno, Alejandro L; Anthopoulos, Thomas D; Salzner, Ulrike; Patil, Satish

2014-08-28

The primary role of substituted side chains in organic semiconductors is to increase their solubility in common organic solvents. In the recent past, many literature reports have suggested that the side chains play a critical role in molecular packing and strongly impact the charge transport properties of conjugated polymers. In this work, we have investigated the influence of side-chains on the charge transport behavior of a novel class of diketopyrrolopyrrole (DPP) based alternating copolymers. To investigate the role of side-chains, we prepared four diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP) conjugated polymers with varied side-chains and carried out a systematic study of thin film microstructure and charge transport properties in polymer thin-film transistors (PTFTs). Combining results obtained from grazing incidence X-ray diffraction (GIXD) and charge transport properties in PTFTs, we conclude side-chains have a strong influence on molecular packing, thin film microstructure, and the charge carrier mobility of DPP-DPP copolymers. However, the influence of side-chains on optical properties was moderate. The preferential "edge-on" packing and dominant n-channel behavior with exceptionally high field-effect electron mobility values of >1 cm(2) V(-1) s(-1) were observed by incorporating hydrophilic (triethylene glycol) and hydrophobic side-chains of alternate DPP units. In contrast, moderate electron and hole mobilities were observed by incorporation of branched hydrophobic side-chains. This work clearly demonstrates that the subtle balance between hydrophobicity and hydrophilicity induced by side-chains is a powerful strategy to alter the molecular packing and improve the ambipolar charge transport properties in DPP-DPP based conjugated polymers. Theoretical analysis supports the conclusion that the side-chains influence polymer properties through morphology changes, as there is no effect on the electronic properties in the gas phase. The exceptional electron mobility is at least partially a result of the strong intramolecular conjugation of the donor and acceptor as evidenced by the unusually wide conduction band of the polymer.

Synchronization techniques for all digital 16-ary QAM receivers operating over land mobile satellite links

NASA Technical Reports Server (NTRS)

Fines, P.; Aghvami, A. H.

1990-01-01

The performance of a low bit rate (64 Kb/s) all digital 16-ary Differentially Encoded Quadrature Amplitude Modulation (16-DEQAM) demodulator operating over a mobile satellite channel, is considered. The synchronization and detection techniques employed to overcome the Rician channel impairments, are described. The acquisition and steady state performance of this modem, are evaluated by computer simulation over AWGN and RICIAN channels. The results verify the suitability of the 16-DEQAM transmission over slowly faded and/or mildly faded channels.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

Entanglement of Electron Spins in Two Coupled Quantum Dots

NASA Astrophysics Data System (ADS)

Chen, Yuanzhen; Webb, Richard

2004-03-01

We study the entanglement of electron spins in a coupled quantum dots system at 70 mK. Two quantum dots are fabricated in a GaAs/AlGaAs heterostructure containing a high mobility 2-D electron gas. The two dots can be tuned independently and the electron spins in the dots are coupled through an exchange interaction between them. An exchange gate is used to vary the height and width of a potential barrier between the two dots, thus controlling the strength of the exchange interaction. Electrons are injected to the coupled dots by two independent DC currents and the output of the dots is incident on a beam splitter, which introduces quantum interferences. Cross-correlations of the shot noise of currents from the two output channels are measured and compared with theory (1). *Work supported by LPS and ARDA under MDA90401C0903 and NSF under DMR 0103223. (1) Burkard, Loss, & Sukhorukov, Phys. Rev. B61, R16303 (2000).

Mouldable all-carbon integrated circuits

NASA Astrophysics Data System (ADS)

Sun, Dong-Ming; Timmermans, Marina Y.; Kaskela, Antti; Nasibulin, Albert G.; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I.; Ohno, Yutaka

2013-08-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027cm2V-1s-1 and an ON/OFF ratio of 105. The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Mouldable all-carbon integrated circuits.

PubMed

Sun, Dong-Ming; Timmermans, Marina Y; Kaskela, Antti; Nasibulin, Albert G; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I; Ohno, Yutaka

2013-01-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027 cm(2) V(-1) s(-1) and an ON/OFF ratio of 10(5). The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Jaewook; Kim, Joonwoo; Jeong, Soon Moon

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

NASA Astrophysics Data System (ADS)

Jeong, Jaewook; Kim, Joonwoo; Kim, Donghyun; Jeon, Heonsu; Jeong, Soon Moon; Hong, Yongtaek

2016-08-01

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Microcrystalline silicon thin-film transistors for large area electronic applications

NASA Astrophysics Data System (ADS)

Chan, Kah-Yoong; Bunte, Eerke; Knipp, Dietmar; Stiebig, Helmut

2007-11-01

Thin-film transistors (TFTs) based on microcrystalline silicon (µc-Si:H) exhibit high charge carrier mobilities exceeding 35 cm2 V-1 s-1. The devices are fabricated by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 °C. The fabrication process of the µc-Si:H TFTs is similar to the low temperature fabrication of amorphous silicon TFTs. The electrical characteristics of the µc-Si:H-based transistors will be presented. As the device charge carrier mobility of short channel TFTs is limited by the contacts, the influence of the drain and source contacts on the device parameters including the device charge carrier mobility and the device threshold voltage will be discussed. The experimental data will be described by a modified standard transistor model which accounts for the contact effects. Furthermore, the transmission line method was used to extract the device parameters including the contact resistance. The modified standard transistor model and the transmission line method will be compared in terms of the extracted device parameters and contact resistances.

High quality crystalline pentacene and rubrene FETs

NASA Astrophysics Data System (ADS)

Butko, Vladimir

2005-03-01

Molecular organic materials offer the promise of novel electronic devices but also present challenges for understanding charge transport in narrow band systems. We find that one of the most important intermolecular transport FET parameters, the effective channel mobility, is parameterized by two factors: (1) the degree of carrier trapping in localized DOS band-tail states, which are higher in concentration for FET structures than for bulk crystal, and (2) the free-carrier mobility, μ0. Our analysis shows crystalline devices possess μ0˜70 cm^2/Vs, significantly greater than polycrystalline thin film devices where free-carrier mobility μ0˜1 cm^2/Vs. Low temperature studies elucidate fundamental transport processes. We report the lowest temperature field effect transport results on a crystalline oligomeric organic material, rubrene. Gated transport shows a factor of ˜10 suppression of the thermal activation energy in 10-50 K range and nearly temperature independent resistivity below 10 K. Other examples of 2 dimensional charge carrier transport will also be discussed.

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

NASA Astrophysics Data System (ADS)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Organic Based Flexible Transistors and Electronic Device

DTIC Science & Technology

2005-05-01

reactive groups that can act as charge carrier traps . 0.0 0.0 V1 ......3..... ... 10 " -.....-." . ;Z 0. - - -1,6 -V* /7VIDS -04O -2.5 10 -1.0 -0.8...of 2.5 kHz in vacuum with pentacene and DHFCO-4T with 7.5 ptm channel length devices. "* Ring oscillator frequencies of 10 kHz in air with pentacene ...similar herringbone packing in DFCO-4T (c) and DPCO-4T (d), respectively, viewed along the long crystallographic axis. Table 1. Charge carrier mobilities (A

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Behavior of a chemically doped graphene junction

NASA Astrophysics Data System (ADS)

Farmer, Damon B.; Lin, Yu-Ming; Afzali-Ardakani, Ali; Avouris, Phaedon

2009-05-01

Polyethylene imine and diazonium salts are used as complementary molecular dopants to engineer a doping profile in a graphene transistor. Electronic transport in this device reveals the presence of two distinct resistance maxima, alluding to neutrality point separation and subsequent formation of a spatially abrupt junction. Carrier mobility in this device is not significantly affected by molecular doping or junction formation, and carrier transmission is found to scale inversely with the effective channel length of the device. Chemical dilutions are used to modify the dopant concentration and, in effect, alter the properties of the junction.

Direct observation of hole transfer from semiconducting polymer to carbon nanotubes.

PubMed

Lan, Fei; Li, Guangyong

2013-05-08

Carbon nanotubes have been proven to play significant roles in polymer-based solar cells. However, there is intensive debate on whether carbon nanotube behaves as a donor or acceptor in the semiconducting polymer:carbon nanotube composite. In this paper, we report a direct observation via Kelvin probe force microscopy (KPFM) that single walled carbon nanotubes (SWNTs) behave as hole transporting channels in poly(3-hexylthiophene-2,5-diyl) (P3HT)/SWNT heterojunctions. By comparing the surface potential (SP) change of SWNT in dark and under illumination, we observed that electrons are blocked from SWNT while holes are transferred to SWNT. This observation can be well-explained by our proposed band alignment model of P3HT/SWNT heterojunction. The finding is further verified by hole mobility measurement using the space charge limited current (SCLC) method. SCLC results indicate that the existence of small amount of SWNT (wt 0.5%) promotes device hole mobility to around 15-fold, indicating SWNT act as hole transfer channel. Our finding of hole transporting behavior of SWNT in P3HT/SWNT blend will provide a useful guidance for enhancing the performance of polymer solar cells by carbon nanotubes.

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.

PubMed

Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu-Seon; Cho, Mann-Ho; Cho, Jeong Ho; Kim, Yong-Hoon; Jeong, Seong-Jun; Park, Seongjun; Lee, Hoo-Jeong; Kim, Hyoungsub

2016-04-06

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

PubMed

Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

2011-03-01

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

2017-07-01

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Relieved kink effects in symmetrically graded In0.45Al0.55As/InxGa1-xAs metamorphic high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Sung; Liao, Chen-Hsian

2007-12-01

Kink effects in an In-rich InxGa1-xAs (x=0.53-0.63) linearly graded channel of an In0.45Al0.55As/InxGa1-xAs metamorphic high-electron-mobility transistor have been effectively relieved by depositing a high-barrier Ni /Au gate with the silicon nitride passivation. Complete physical investigations for the relieved kink effects have been made by comparing identical devices with/without a high-barrier Schottky gate or the surface passivation. After successfully suppressing the kink effects, the proposed device has shown a superior voltage gain of 173.8, low output conductance of 2.09mS/mm, and excellent power-added efficiency of 54.1% with high output power (power gain) of 14.87dBm (14.53dB). Improved linearity and excellent thermal threshold coefficient (∂Vth/∂T) of -0.14mV/K have also been achieved. The proposed design provides good potential for high-gain and high-linearity circuit applications.

Flexible TFTs based on solution-processed ZnO nanoparticles.

PubMed

Jun, Jin Hyung; Park, Byoungjun; Cho, Kyoungah; Kim, Sangsig

2009-12-16

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V(-1) s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.

47 CFR 90.633 - Conventional systems loading requirements.

Code of Federal Regulations, 2012 CFR

2012-10-01

... of mobile stations justifies the total number of authorized based frequencies in a given area, the.... If this cannot be determined, it will be counted fractionally over the number of base station... (70) mobile stations for each channel authorized. (b) A channel will not be assigned to additional...

Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors

NASA Astrophysics Data System (ADS)

Singh, Shaivalini; Chakrabarti, P.

2012-10-01

A ZnO based thin film transistor (TFT) with bottom-gate configuration and SiO2 as insulating layer has been fabricated and characterized. The ZnO thin film was prepared by spin coating the sol-gel solution on the p-type Si wafers. The optical and structural properties of ZnO films were investigated using UV measurements and scanning electron microscope (SEM). The result of UV-visible study confirms that the films have a good absorbance in UV region and relatively low absorbance in the visible region. The TFT exhibited an off-current of 2.5×10-7 A. The values of field effect channel mobility and on/off current ratio extracted for the device, measured 11 cm2/V.s and ~102 respectively. The value of threshold voltage was found to be 1.3 V.

Zinc Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

PubMed

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

NASA Astrophysics Data System (ADS)

Zhan, Xiang-Mi; Hao, Mei-Lan; Wang, Quan; Li, Wei; Xiao, Hong-Ling; Feng, Chun; Jiang, Li-Juan; Wang, Cui-Mei; Wang, Xiao-Liang; Wang, Zhan-Guo

2017-03-01

Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ( {V}{DS}=0.5 V) shows a clear decrease of 69 μA upon the introduction of 1 μmolL {}-1 (μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge. Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301, the National Natural Sciences Foundation of China under Grant No 61334002, and the National Science and Technology Major Project.

Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

PubMed

Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

2014-11-01

Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

System for Processing Coded OFDM Under Doppler and Fading

NASA Technical Reports Server (NTRS)

Tsou, Haiping; Darden, Scott; Lee, Dennis; Yan, Tsun-Yee

2005-01-01

An advanced communication system has been proposed for transmitting and receiving coded digital data conveyed as a form of quadrature amplitude modulation (QAM) on orthogonal frequency-division multiplexing (OFDM) signals in the presence of such adverse propagation-channel effects as large dynamic Doppler shifts and frequency-selective multipath fading. Such adverse channel effects are typical of data communications between mobile units or between mobile and stationary units (e.g., telemetric transmissions from aircraft to ground stations). The proposed system incorporates novel signal processing techniques intended to reduce the losses associated with adverse channel effects while maintaining compatibility with the high-speed physical layer specifications defined for wireless local area networks (LANs) as the standard 802.11a of the Institute of Electrical and Electronics Engineers (IEEE 802.11a). OFDM is a multi-carrier modulation technique that is widely used for wireless transmission of data in LANs and in metropolitan area networks (MANs). OFDM has been adopted in IEEE 802.11a and some other industry standards because it affords robust performance under frequency-selective fading. However, its intrinsic frequency-diversity feature is highly sensitive to synchronization errors; this sensitivity poses a challenge to preserve coherence between the component subcarriers of an OFDM system in order to avoid intercarrier interference in the presence of large dynamic Doppler shifts as well as frequency-selective fading. As a result, heretofore, the use of OFDM has been limited primarily to applications involving small or zero Doppler shifts. The proposed system includes a digital coherent OFDM communication system that would utilize enhanced 802.1la-compatible signal-processing algorithms to overcome effects of frequency-selective fading and large dynamic Doppler shifts. The overall transceiver design would implement a two-frequency-channel architecture (see figure) that would afford frequency diversity for reducing the adverse effects of multipath fading. By using parallel concatenated convolutional codes (also known as Turbo codes) across the dual-channel and advanced OFDM signal processing within each channel, the proposed system is intended to achieve at least an order of magnitude improvement in received signal-to-noise ratio under adverse channel effects while preserving spectral efficiency.

A Pre-Emptive Horizontal Channel Borrowing and Vertical Traffic Overflowing Channel Allocation Scheme for Overlay Networks

NASA Astrophysics Data System (ADS)

Zhao, Fang-Ming; Jiang, Ling-Ge; He, Chen

In this paper, a channel allocation scheme is studied for overlay wireless networks to optimize connection-level QoS. The contributions of our work are threefold. First, a channel allocation strategy using both horizontal channel borrowing and vertical traffic overflowing (HCBVTO) is presented and analyzed. When all the channels in a given macrocell are used, high-mobility real-time handoff requests can borrow channels from adjacent homogeneous cells. In case that the borrowing requests fail, handoff requests may also be overflowed to heterogeneous cells, if possible. Second, high-mobility real-time service is prioritized by allowing it to preempt channels currently used by other services. And third, to meet the high QoS requirements of some services and increase the utilization of radio resources, certain services can be transformed between real-time services and non-real-time services as necessary. Simulation results demonstrate that the proposed schemes can improve system performance.

Influence of the elastic deformation of a foam on its mobility in channels of linearly varying width.

PubMed

Dollet, Benjamin; Jones, Siân A; Méheust, Yves; Cantat, Isabelle

2014-08-01

We study foam flow in an elementary model porous medium consisting of a convergent and a divergent channel positioned side by side and possessing a fixed joint porosity. Configurations of converging or diverging channels are ubiquitous at the pore scale in porous media, as all channels linking pores possess a converging and diverging part. The resulting flow kinematics imposes asymmetric bubble deformations in the two channels, which modulate foam-wall friction and strongly impact the flux distribution. We measure, as well as quantitatively predict, the ratio of the fluxes in the two channels as a function of the channel widths by modeling pressure drops of both viscous and capillary origins. This study reveals the crucial importance of boundary-induced bubble deformation on the mobility of a flowing foam, resulting in particular in flow irreversibility.

Electron Mobility in γ -Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Christensen, D. V.; Frenkel, Y.; Schütz, P.; Trier, F.; Wissberg, S.; Claessen, R.; Kalisky, B.; Smith, A.; Chen, Y. Z.; Pryds, N.

2018-05-01

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3 -based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3 . To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ -Al2O3 . The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ -Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T >150 K , we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8 ×1013 cm-2 ), the screened electron-phonon coupling leads to room-temperature mobilities up to μ ˜12 cm2/V s . For 5 K

A DC electrophoresis method for determining electrophoretic mobility through the pressure driven negation of electro osmosis

NASA Astrophysics Data System (ADS)

Karam, Pascal; Pennathur, Sumita

2016-11-01

Characterization of the electrophoretic mobility and zeta potential of micro and nanoparticles is important for assessing properties such as stability, charge and size. In electrophoretic techniques for such characterization, the bulk fluid motion due to the interaction between the fluid and the charged surface must be accounted for. Unlike current industrial systems which rely on DLS and oscillating potentials to mitigate electroosmotic flow (EOF), we propose a simple alternative electrophoretic method for optically determining electrophoretic mobility using a DC electric fields. Specifically, we create a system where an adverse pressure gradient counters EOF, and design the geometry of the channel so that the flow profile of the pressure driven flow matches that of the EOF in large regions of the channel (ie. where we observe particle flow). Our specific COMSOL-optimized geometry is two large cross sectional areas adjacent to a central, high aspect ratio channel. We show that this effectively removes EOF from a large region of the channel and allows for the accurate optical characterization of electrophoretic particle mobility, no matter the wall charge or particle size.

Dissimilar viscosity induced sample pre-concentration in elecrokinetic nanofluidic channels

NASA Astrophysics Data System (ADS)

Wink, Dean; Shelton, Elijah; Pennathur, Sumita; Storey, Brian

2013-11-01

Nanofluidic analysis systems boast many advantages: portability, small sample handling, short processing times, and potential for integration with mobile electronics. However, such systems face the challenge of detecting increasingly small volumes of sample at low concentrations. In this work, we demonstrate a unique pre-concentration technique in electrokinetic nanofluidic systems based on a viscosity mismatch between two fluids. In nanofluidic electrokinetic systems, finite electric double layers (EDL) lead to non-uniform electric potentials and transverse concentration distributions. Therefore, when the EDL is comparable in size to the channel height, negatively charged ions are repelled from negatively charged walls and preferentially populate the channel centerline. Furthermore, an axial piecewise viscosity distribution induces internal pressure gradients within the channel. These force the ions to move at a different average velocities based on the pressure gradient being favorable or adverse, leading to focusing. To experimentally probe this phenomenon, we electrokinetically inject solutions of borate buffer with and without glycerol (to change the viscosity) and use a fluorescent tracer dye to visualize the flow. We perform the injections in cross-geometry channels of 20 micron, 1 micron, and 250 nanometer depths. We measure fluorescence at 5, 10 and 15 mm distances from junction. Enhancement is characterized by comparing intensities to control measurements for systems with uniform viscosity.

Methods for separating particles and/or nucleic acids using isotachophoresis

DOEpatents

Jung, Byoungsok; Ness, Kevin; Rose, Klint A.

2016-03-15

According to one embodiment, a method includes co-feeding fluids comprising a leading electrolyte, a trailing electrolyte, and at least one of DNA and RNA to a channel, and applying an electric field to the fluids in a direction perpendicular to an axis of the channel for inducing transverse isotachophoresis. In another embodiment, a method includes co-feeding fluids to a channel. The fluids include a leading electrolyte, a trailing electrolyte, biological objects, at least one of DNA and RNA, and a spacer electrolyte having an electrophoretic mobility that is between an electrophoretic mobility of at least some of the biological objects and an electrophoretic mobility of the at least one of the DNA and the RNA. The method also includes applying an electric field to the fluids in a direction perpendicular to an axis of the channel for inducing transverse isotachophoresis. Other methods of isotachophoresis are disclosed in addition to these.

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

PubMed Central

Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

2014-01-01

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V−1 s−1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method. PMID:25428665

Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

NASA Astrophysics Data System (ADS)

Kajdos, Adam Paul

Two-dimensional electron gases (2DEGs) in SrTiO3 have attracted considerable attention for exhibiting a variety of interesting physical phenomena, such as superconductivity and magnetism. So far, most of the literature has focused on interfaces between nonpolar SrTiO3 and polar perovskite oxides (e.g. LaAlO3 or rare-earth titanates), where high carrier density 2DEGs (˜3 x 1014 cm-2) are generated by polar discontinuity. Modulation doping is an alternative approach to generating a 2DEG that has been explored extensively in III-V semiconductors but has not heretofore been explored in complex oxides. This approach involves interfacing an undoped semiconductor with a doped semiconductor whose conduction band edge lies at a higher energy, which results in electrons diffusing into the undoped semiconductor transport channel, where scattering from ionized dopants is minimized. Realizing a high-mobility modulation-doped structure with a SrTiO3 transport channel therefore requires both the optimization of the transport channel by minimizing native defects as well as the development of a perovskite oxide which has a suitable band offset with SrTiO3 and can be electron-doped. The growth of high electron mobility SrTiO3 as a suitable transport channel material was previously demonstrated using the hybrid molecular beam epitaxy (MBE) approach, where Sr is delivered via a solid source and Ti is delivered using a metal-organic precursor, titanium (IV) tetra-isopropoxide (TTIP). Expanding on this, in-situ reflection high-energy electron diffraction (RHEED) is used to track the surface and resulting film cation stoichiometry of homoepitaxial SrTiO3 (001) thin films grown by hybrid MBE. It is shown that films with lattice parameters identical to bulk single-crystal substrates within the detection limit of high-resolution X-ray diffraction (XRD) measurements exhibit an evolution in surface reconstruction with increasing TTIP beam-equivalent pressure. The change in the observed surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

Monitoring bedload entrainment and transport in snowmelt-dominated forest streams of the Columbia Mountains, Canada

NASA Astrophysics Data System (ADS)

Green, Kim; Brardinoni, Francesco; Alila, Younes

2014-05-01

We monitor bedload transport and water discharge at six stations in two forested headwater streams of the Columbia Mountains, Canada. The monitoring network of sediment traps is designed to examine the effects of channel bed texture, and the influence of alluvial (i.e., step pools, and riffle pools) and semi-alluvial morphologies (i.e., boulder cascades and forced step pools) on bedload entrainment and transport. Results suggest that patterns of bedload entrainment are influenced by flow resistance while the value of the critical dimensionless shear stress for mobilization of the surface D50 varies due to channel gradient, grain sheltering effects and, to a less extent, flow resistance. Regardless of channel morphology we observe: (i) equal-threshold entrainment for all mobile grains in channels with high grain and/or form resistance; and (ii) initial equal-threshold entrainment of calibers ≤ 22mm, and subsequent size-selective entrainment of coarser material in channels with low form resistance (e.g. riffle pool). Scaled fractional analysis reveals that in reaches with high flow resistance most bedload transport occurs in partial mobility fashion relative to the available bed material and that only material finer than 16mm attains full mobility during over-bank flows. Equal mobility transport for a wider range of grain sizes is achieved in reaches with reduced flow resistance. Evaluation of bedload rating curves across sites identifies that grain effects predominate with respect to bedload flux whereas morphological effects (i.e. form resistance) play a secondary role. Application of selected empirical formulae developed in steep alpine channels present variable success in predicting transport rates in the study reaches.

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Jiang, Zenan; Basile, A. F.

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. Thesemore » are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.« less

Wireless Fading Channel Models: From Classical to Stochastic Differential Equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olama, Mohammed M; Djouadi, Seddik M; Charalambous, Prof. Charalambos

2010-01-01

The wireless communications channel constitutes the basic physical link between the transmitter and the receiver antennas. Its modeling has been and continues to be a tantalizing issue, while being one of the most fundamental components based on which transmitters and receivers are designed and optimized. The ultimate performance limits of any communication system are determined by the channel it operates in. Realistic channel models are thus of utmost importance for system design and testing. In addition to exponential power path-loss, wireless channels suffer from stochastic short term fading (STF) due to multipath, and stochastic long term fading (LTF) due tomore » shadowing depending on the geographical area. STF corresponds to severe signal envelope fluctuations, and occurs in densely built-up areas filled with lots of objects like buildings, vehicles, etc. On the other hand, LTF corresponds to less severe mean signal envelope fluctuations, and occurs in sparsely populated or suburban areas. In general, LTF and STF are considered as superimposed and may be treated separately. Ossanna was the pioneer to characterize the statistical properties of the signal received by a mobile user, in terms of interference of incident and reflected waves. His model was better suited for describing fading occurring mainly in suburban areas (LTF environments). It is described by the average power loss due to distance and power loss due to reflection of signals from surfaces, which when measured in dB's give rise to normal distributions, and this implies that the channel attenuation coefficient is log-normally distributed. Furthermore, in mobile communications, the LTF channel models are also characterized by their special correlation characteristics which have been reported. Clarke introduced the first comprehensive scattering model describing STF occurring mainly in urban areas. An easy way to simulate Clarke's model using a computer simulation is described. This model was later expanded to three-dimensions (3D) by Aulin. An indoor STF was introduced. Most of these STF models provide information on the frequency response of the channel, described by the Doppler power spectral density (DPSD). Aulin presented a methodology to find the Doppler power spectrum by computing the Fourier transform of the autocorrelation function of the channel impulse response with respect to time. A different approach, leading to the same Doppler power spectrum relation was presented by Gans. These STF models suggest various distributions for the received signal amplitude such as Rayleigh, Rician, or Nakagami. Models based on autoregressive and moving averages (AR) are proposed. However, these models assume that the channel state is completely observable, which in reality is not the case due to additive noise, and requires long observation intervals. First order Markov models for Raleigh fading have been proposed, and the usefulness of a finite-state Markov channel model is argued. Mobile-to-mobile (or ad hoc) wireless networks comprise nodes that freely and dynamically self-organize into arbitrary and/or temporary network topology without any fixed infrastructure support. They require direct communication between a mobile transmitter and a mobile receiver over a wireless medium. Such mobile-to-mobile communication systems differ from the conventional cellular systems, where one terminal, the base station, is stationary, and only the mobile station is moving. As a consequence, the statistical properties of mobile-to-mobile links are different from cellular ones. Copious ad hoc networking research exists on layers in the open system interconnection (OSI) model above the physical layer. However, neglecting the physical layer while modeling wireless environment is error prone and should be considered more carefully. The experimental results show that the factors at the physical layer not only affect the absolute performance of a protocol, but because their impact on different protocols is nonuniform, it can even change the relative ranking among protocols for the same scenario. The importance of the physical layer is demonstrated by evaluating the Medium Access Control (MAC) performance. Most of the research conducted on wireless channel modeling deals mainly with deterministic wireless channel models. In these models, the speeds of the nodes are assumed to be constant and the statistical characteristics of the received signal are assumed to be fixed with time. But in reality, the propagation environment varies continuously due to mobility of the nodes at variable speeds and movement of objects or scatter across transmitters and receivers resulting in appearance or disappearance of existing paths from one instant to the next. As a result, the current models that assume fixed statistics are unable to capture and track complex time variations in the propagation environment.« less

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors.

PubMed

Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho

2017-11-22

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

PubMed

Xu, Lei; Chen, Qian; Liao, Lei; Liu, Xingqiang; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Jiang, Changzhong; Wang, Jinlan; Li, Jinchai

2016-03-02

Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (VO). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (∼2.0 × 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the VO to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

PubMed Central

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-01-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation. PMID:27645425

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

NASA Astrophysics Data System (ADS)

Cho, Seongjae; Man Kang, In; Rok Kim, Kyung; Park, Byung-Gook; Harris, James S.

2013-11-01

In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

NASA Astrophysics Data System (ADS)

Wong, Hei; Iwai, Hiroshi; Liou, J. J.

2005-05-01

It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

NASA Astrophysics Data System (ADS)

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

PubMed Central

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

NASA Astrophysics Data System (ADS)

Ji, Hyunjin; Lee, Gwanmu; Joo, Min-Kyu; Yun, Yoojoo; Yi, Hojoon; Park, Ji-Hoon; Suh, Dongseok; Lim, Seong Chu

2017-05-01

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ˜10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ˜10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

Shape matters in protein mobility within membranes

PubMed Central

Quemeneur, François; Sigurdsson, Jon K.; Renner, Marianne; Atzberger, Paul J.; Bassereau, Patricia; Lacoste, David

2014-01-01

The lateral mobility of proteins within cell membranes is usually thought to be dependent on their size and modulated by local heterogeneities of the membrane. Experiments using single-particle tracking on reconstituted membranes demonstrate that protein diffusion is significantly influenced by the interplay of membrane curvature, membrane tension, and protein shape. We find that the curvature-coupled voltage-gated potassium channel (KvAP) undergoes a significant increase in protein mobility under tension, whereas the mobility of the curvature-neutral water channel aquaporin 0 (AQP0) is insensitive to it. Such observations are well explained in terms of an effective friction coefficient of the protein induced by the local membrane deformation. PMID:24706877

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikheev, Evgeny; Himmetoglu, Burak; Kajdos, Adam P.

We analyze and compare the temperature dependence of the electron mobility of two- and three-dimensional electron liquids in SrTiO{sub 3}. The contributions of electron-electron scattering must be taken into account to accurately describe the mobility in both cases. For uniformly doped, three-dimensional electron liquids, the room temperature mobility crosses over from longitudinal optical (LO) phonon-scattering-limited to electron-electron-scattering-limited as a function of carrier density. In high-density, two-dimensional electron liquids, LO phonon scattering is completely screened and the mobility is dominated by electron-electron scattering up to room temperature. The possible origins of the observed behavior and the consequences for approaches to improvemore » the mobility are discussed.« less

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

NASA Astrophysics Data System (ADS)

Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

2016-08-01

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.

2016-08-08

We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

Adoption and Business Value of Mobile Retail Channel: A Dependency Perspective on Mobile Commerce

ERIC Educational Resources Information Center

Chou, Yen-Chun

2013-01-01

Forrest Research estimated that revenues derived from mobile devices will grow at an annual rate of 39% to reach $31 billion by 2016. With the tremendous market growth, mobile banking, mobile marketing, and mobile retailing have been recently introduced to satisfy customer needs. Academic and practical articles have widely discussed unique…

Activation of protein kinase C alters the intracellular distribution and mobility of cardiac Na+ channels.

PubMed

Hallaq, Haifa; Wang, Dao W; Kunic, Jennifer D; George, Alfred L; Wells, K Sam; Murray, Katherine T

2012-02-01

Na(+) current derived from expression of the cardiac isoform SCN5A is reduced by receptor-mediated or direct activation of protein kinase C (PKC). Previous work has suggested a possible role for loss of Na(+) channels at the plasma membrane in this effect, but the results are controversial. In this study, we tested the hypothesis that PKC activation acutely modulates the intracellular distribution of SCN5A channels and that this effect can be visualized in living cells. In human embryonic kidney cells that stably expressed SCN5A with green fluorescent protein (GFP) fused to the channel COOH-terminus (SCN5A-GFP), Na(+) currents were suppressed by an exposure to PKC activation. Using confocal microscopy, colocalization of SCN5A-GFP channels with the plasma membrane under control and stimulated conditions was quantified. A separate population of SCN5A channels containing an extracellular epitope was immunolabeled to permit temporally stable labeling of the plasma membrane. Our results demonstrated that Na(+) channels were preferentially trafficked away from the plasma membrane by PKC activation, with a major contribution by Ca(2+)-sensitive or conventional PKC isoforms, whereas stimulation of protein kinase A (PKA) had the opposite effect. Removal of the conserved PKC site Ser(1503) or exposure to the NADPH oxidase inhibitor apocynin eliminated the PKC-mediated effect to alter channel trafficking, indicating that both channel phosphorylation and ROS were required. Experiments using fluorescence recovery after photobleaching demonstrated that both PKC and PKA also modified channel mobility in a manner consistent with the dynamics of channel distribution. These results demonstrate that the activation of protein kinases can acutely regulate the intracellular distribution and molecular mobility of cardiac Na(+) channels in living cells.

On-chip Micro- and Nanofluidic Electrokinetic Injection and Separation for PEGylation Analysis

NASA Astrophysics Data System (ADS)

Shelton, Elijah; Baum, Mary; Morse, Dan; Pennathur, Sumita; Pennathur Nanofluidics Laboratory Collaboration; Morse Laboratory Collaboration

2012-11-01

We present an experimental study of micro- and nanofluidic electrokinetic injection and separation in borosilcate channels as a method for characterizing size and zeta potential of biomolecules-specifically polyethlylene glycol (PEG), keyhole limpet hemocyanine (KLH), and pegylated KLH. While pegylation (the conjugation of proteins with PEG) is an established technique for enhancing a protein's therapeutic properties, reliable characterization of these conjugations by traditional analysis techniques (i.e. gel-electrophoresis, zetasizer) remains a challenge. Using a three-step electrokinetic sequence (load, gate, and inject), FITC labeled species and a fluorescein tracer dye are injected into a channel where they separate according to differences in electrophoretic mobility. We find the average absolute mobility of pegylated subunit KLH in 1 micron channels to be 56% that of unpegylated subunit KLH. In a 250 nm channel, we measure a 33% shift in the average absolute mobility of PEG dendrimers as compared to measurements in a 1 micron channel. These results begin to demonstrate how a micro- and nanofluidic-based approach might address the demand for effective and accessible nanoparticle characterization platforms. Supported by the Institute for Collaborative Biotechnologies.

Enhanced gas separation factors of microporous polymer constrained in the channels of anodic alumina membranes

PubMed Central

Chernova, Ekaterina; Petukhov, Dmitrii; Boytsova, Olga; Alentiev, Alexander; Budd, Peter; Yampolskii, Yuri; Eliseev, Andrei

2016-01-01

New composite membranes based on porous anodic alumina films and polymer of intrinsic microporosity (PIM-1) have been prepared using a spin-coating technique. According to scanning electron microscopy, partial penetration of polymer into the pores of alumina supports takes place giving rise to selective polymeric layers with fiber-like microstructure. Geometric confinement of rigid PIM-1 in the channels of anodic alumina causes reduction of small-scale mobility in polymeric chains. As a result, transport of permanent gases, such as CH4, becomes significantly hindered across composite membranes. Contrary, the transport of condensable gases (CO2, С4H10), did not significantly suffer from the confinement due to high solubility in the polymer matrix. This strategy enables enhancement of selectivity towards CO2 and C4H10 without significant loss of the membrane performance and seems to be prospective for drain and sweetening of natural gas. PMID:27498607

Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer.

PubMed

Jung, Soon-Won; Choi, Jeong-Seon; Park, Jung Ho; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Ji-Young; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong

2016-03-01

We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.

Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors

NASA Astrophysics Data System (ADS)

Choi, Kwang-Hyuk; Kim, Han-Ki

2013-02-01

Ti contact properties and their electrical contribution to an amorphous InGaZnO (a-IGZO) semiconductor-based thin film transistor (TFT) were investigated in terms of chemical, structural, and electrical considerations. TFT device parameters were quantitatively studied by a transmission line method. By comparing various a-IGZO TFT parameters with those of different Ag and Ti source/drain electrodes, Ti S/D contact with an a-IGZO channel was found to lead to a negative shift in VT (-Δ 0.52 V). This resulted in higher saturation mobility (8.48 cm2/Vs) of a-IGZO TFTs due to effective interfacial reaction between Ti and an a-IGZO semiconducting layer. Based on transmission electron microcopy, x-ray photoelectron depth profile analyses, and numerical calculation of TFT parameters, we suggest a possible Ti contact mechanism on semiconducting a-IGZO channel layers for TFTs.

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-06-01

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

Enhanced gas separation factors of microporous polymer constrained in the channels of anodic alumina membranes

NASA Astrophysics Data System (ADS)

Chernova, Ekaterina; Petukhov, Dmitrii; Boytsova, Olga; Alentiev, Alexander; Budd, Peter; Yampolskii, Yuri; Eliseev, Andrei

2016-08-01

New composite membranes based on porous anodic alumina films and polymer of intrinsic microporosity (PIM-1) have been prepared using a spin-coating technique. According to scanning electron microscopy, partial penetration of polymer into the pores of alumina supports takes place giving rise to selective polymeric layers with fiber-like microstructure. Geometric confinement of rigid PIM-1 in the channels of anodic alumina causes reduction of small-scale mobility in polymeric chains. As a result, transport of permanent gases, such as CH4, becomes significantly hindered across composite membranes. Contrary, the transport of condensable gases (CO2, С4H10), did not significantly suffer from the confinement due to high solubility in the polymer matrix. This strategy enables enhancement of selectivity towards CO2 and C4H10 without significant loss of the membrane performance and seems to be prospective for drain and sweetening of natural gas.

Growth of heterostructures on InAs for high mobility device applications

NASA Astrophysics Data System (ADS)

Contreras-Guerrero, R.; Wang, S.; Edirisooriya, M.; Priyantha, W.; Rojas-Ramirez, J. S.; Bhuwalka, K.; Doornbos, G.; Holland, M.; Oxland, R.; Vellianitis, G.; Van Dal, M.; Duriez, B.; Passlack, M.; Diaz, C. H.; Droopad, R.

2013-09-01

The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As4 with a slight increase using As2. High structural quality lattice matched AlAsxSb1-x buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAsxSb1-x buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.

Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.

Introduction of performance boosters like Ge as channel material for the future of CMOS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samia, Slimani, E-mail: slimani.samia@gmail.com; Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida; Bouaza, Djellouli, E-mail: djelbou@hotmail.fr

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumventmore » the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.« less

Mobility of Protozoa through Narrow Channels

PubMed Central

Wang, Wei; Shor, Leslie M.; LeBoeuf, Eugene J.; Wikswo, John P.; Kosson, David S.

2005-01-01

Microbes in the environment are profoundly affected by chemical and physical heterogeneities occurring on a spatial scale of millimeters to micrometers. Physical refuges are critical for maintaining stable bacterial populations in the presence of high predation pressure by protozoa. The effects of microscale heterogeneity, however, are difficult to replicate and observe using conventional experimental techniques. The objective of this research was to investigate the effect of spatial constraints on the mobility of six species of marine protozoa. Microfluidic devices were created with small channels similar in size to pore spaces in soil or sediment systems. Individuals from each species of protozoa tested were able to rapidly discover and move within these channels. The time required for locating the channel entrance from the source well increased with protozoan size and decreased with channel height. Protozoa of every species were able to pass constrictions with dimensions equal to or smaller than the individual's unconstrained cross-sectional area. Channel geometry was also an important factor affecting protozoan mobility. Linear rates of motion for various species of protozoa varied by channel size. In relatively wide channels, typical rates of motion were 300 to 500 μm s−1 (or about 1 m per hour). As the channel dimensions decreased, however, motilities slowed more than an order of magnitude to 20 μm s−1. Protozoa were consistently observed to exhibit several strategies for successfully traversing channel reductions. The empirical results and qualitative observations resulting from this research help define the physical limitations on protozoan grazing, a critical process affecting microbes in the environment. PMID:16085857

77 FR 18860 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Notice of Receipt of Complaint...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-28

... INTERNATIONAL TRADE COMMISSION [DN 2885] Certain Consumer Electronics, Including Mobile Phones and.... International Trade Commission has received a complaint entitled Certain Consumer Electronics, Including Mobile... electronics, including mobile phones and tablets. The complaint names as respondents ASUSTeK Computer, Inc. of...

Mobile Bay, Alabama area seen in Skylab 4 Earth Resources Experiment Package

NASA Technical Reports Server (NTRS)

1974-01-01

A near vertical view of the Mobile Bay, Alabama area seen in this Skylab 4 Earth Resources Experiment Package S190-B (five-inch earth terrain camera) photograph taken from the Skylab space station in earth orbit. North of Mobile the Tombigbee and Alabama Rivers join to form the Mobile River. Detailed configuration of the individual stream channels and boundaries can be defined as the Mobile River flows into Mobile Bay and into the Gulf of Mexico. The Mobile River Valley with its numerous stream channels is a distinct light shade in contrast to the dark green shade of the adjacent areas. The red coloration of Mobile Bay reflects the sediment load carried into the bay by the rivers. The westerly movement of the shore currents at the mouth of Mobile Bay is shown by the contrasting light blue of the sediment-laden current the the blue of the Gulf. Agricultural areas east and west of Mobile Bay are characterized by a rectangular pattern in green to white shades. Color variations may reflect

Equal-mobility bed load transport in a small, step-pool channel in the Ouachita Mountains

Treesearch

Daniel A. Marion; Frank Weirich

2003-01-01

Abstract: Equal-mobility transport (EMT) of bed load is more evident than size-selective transport during near-bankfull flow events in a small, step-pool channel in the Ouachita Mountains of central Arkansas. Bed load transport modes were studied by simulating five separate runoff events with peak discharges between 0.25 and 1.34 m3...

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

NASA Astrophysics Data System (ADS)

Ebrahimi, Behzad; Asad, Mohsen

2015-07-01

In this paper, we propose a fully AlGaN high electron mobility (HEMT) in which the gate electrode, the barrier and the channel are all AlGaN. The p-type AlGaN gate facilitates the normally-off operation to be compatible with the state-of-the-art power amplifiers. In addition, the AlGaN channel increases the breakdown voltage (VBR) to 598 V due to the higher breakdown field of AlGaN compared to GaN. To assess the efficiency of the proposed structure, its characteristics are compared with the conventional and recently proposed structures. The two-dimensional device simulation results show that the proposed structure has the highest threshold voltage (Vth) and the VBR with the moderately low ON-resistance (RON). These features lead to the highest figure of merit (2.49 × 1012) among the structures which is 83%, 59%, 47% and 49% more than those of the conventional, with a field plate, AlGaN gate and AlGaN channel structures, respectively.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

PubMed Central

Lyu, Hongming; Lu, Qi; Liu, Jinbiao; Wu, Xiaoming; Zhang, Jinyu; Li, Junfeng; Niu, Jiebin; Yu, Zhiping; Wu, Huaqiang; Qian, He

2016-01-01

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics. PMID:27775009

Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.

2015-02-02

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaNmore » HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.« less

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

PubMed

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin

2015-01-14

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a roommore » temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.« less

A study on the co- and adjacent channel protection requirements for mobile satellite ACSSB modulation

NASA Technical Reports Server (NTRS)

Sydor, John T.

1988-01-01

Samples of speech modulated by narrowband frequency modulation (NBFM) (cellular) and amplitude companded single sideband (ACSSB) radios were subjected to simulated co- and adjacent channel interference environments typical of proposed frequency division multiple access (FDMA) mobile satellite systems. These samples were then listened to by a group of evaluators whose subjective responses to the samples were used to produce a series of graphs showing the relationship between subjective acceptability, carrier to noise density (C/No), carrier to interference ratio (C/I), and frequency offset. The results show that in a mobile satellite environment, ACSSB deteriorates more slowly than NBFM. The co- and adjacent channel protection ratios for both modulation techniques were roughly the same, even though the mechanism for signal deterioration is different.

An emergency response mobile robot for operations in combustible atmospheres

NASA Technical Reports Server (NTRS)

Stone, Henry W. (Inventor); Ohm, Timothy R. (Inventor)

1993-01-01

A mobile, self-powered, self-contained, and remote-controlled robot is presented. The robot is capable of safely operating in a combustible atmosphere and providing information about the atmosphere to the operator. The robot includes non-sparking and non-arcing electro-mechanical and electronic components designed to prevent the robot from igniting the combustible atmosphere. The robot also includes positively pressurized enclosures that house the electromechanical and electronic components of the robot and prevent intrusion of the combustible atmosphere into the enclosures. The enclosures are interconnected such that a pressurized gas injected into any one of the enclosures is routed to all the other enclosures through the interconnections. It is preferred that one or more sealed internal channels through structures intervening between the enclosures be employed. Pressure transducers for detecting if the pressure within the enclosures falls below a predetermined level are included. The robot also has a sensing device for determining the types of combustible substances in the surrounding atmosphere, as well as the concentrations of each type of substance relative to a pre-determined lower explosive limit (LEL). In addition, the sensing device can determine the percent level of oxygen present in the surrounding atmosphere.

Emergency response mobile robot for operations in combustible atmospheres

NASA Technical Reports Server (NTRS)

Stone, Henry W. (Inventor); Ohm, Timothy R. (Inventor)

1995-01-01

A mobile, self-powered, self-contained, and remote-controlled robot is presented. The robot is capable of safely operating in a combustible atmosphere and providing information about the atmosphere to the operator. The robot includes non-sparking and non-arcing electro-mechanical and electronic components designed to prevent the robot from igniting the combustible atmosphere. The robot also includes positively pressurized enclosures that house the electromechanical and electronic components of the robot and prevent intrusion of the combustible atmosphere into the enclosures. The enclosures are interconnected such that a pressurized gas injected into any one of the enclosures is routed to all the other enclosures through the interconnections. It is preferred that one or more sealed internal channels through structures intervening between the enclosures be employed. Pressure transducers for detecting if the pressure within the enclosures falls below a predetermined level are included. The robot also has a sensing device for determining the types of combustible substances in the surrounding atmosphere, as well as the concentrations of each type of substance relative to a pre-determined lower explosive limit (LEL). In addition, the sensing device can determine the percent level of oxygen present in the surrounding atmosphere.

First-principles design of nanostructured hybrid photovoltaics based on layered transition metal phosphates

DOE PAGES

Lentz, Levi C.; Kolpak, Alexie M.

2017-04-28

The performance of bulk organic and hybrid organic-inorganic heterojunction photovoltaics is often limited by high carrier recombination arising from strongly bound excitons and low carrier mobility. Structuring materials to minimize the length scales required for exciton separation and carrier collection is therefore a promising approach for improving efficiency. In this work, first-principles computations are employed to design and characterize a new class of photovoltaic materials composed of layered transition metal phosphates (TMPs) covalently bound to organic absorber molecules to form nanostructured superlattices. Using a combination of transition metal substitution and organic functionalization, the electronic structure of these materials is systematicallymore » tuned to design a new hybrid photovoltaic material predicted to exhibit very low recombination due to the presence of a local electric field and spatially isolated, high mobility, two-dimensional electron and hole conducting channels. Furthermore, this material is predicted to have a large open-circuit voltage of 1.7 V. Here, this work suggests that hybrid TMPs constitute an interesting class of materials for further investigation in the search for achieving high efficiency, high power, and low cost photo Zirconium phosphate was chosen, in part, due to previous experiment voltaics.« less

Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

PubMed

Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

2015-05-20

Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics.

First-principles design of nanostructured hybrid photovoltaics based on layered transition metal phosphates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lentz, Levi C.; Kolpak, Alexie M.

The performance of bulk organic and hybrid organic-inorganic heterojunction photovoltaics is often limited by high carrier recombination arising from strongly bound excitons and low carrier mobility. Structuring materials to minimize the length scales required for exciton separation and carrier collection is therefore a promising approach for improving efficiency. In this work, first-principles computations are employed to design and characterize a new class of photovoltaic materials composed of layered transition metal phosphates (TMPs) covalently bound to organic absorber molecules to form nanostructured superlattices. Using a combination of transition metal substitution and organic functionalization, the electronic structure of these materials is systematicallymore » tuned to design a new hybrid photovoltaic material predicted to exhibit very low recombination due to the presence of a local electric field and spatially isolated, high mobility, two-dimensional electron and hole conducting channels. Furthermore, this material is predicted to have a large open-circuit voltage of 1.7 V. Here, this work suggests that hybrid TMPs constitute an interesting class of materials for further investigation in the search for achieving high efficiency, high power, and low cost photo Zirconium phosphate was chosen, in part, due to previous experiment voltaics.« less

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capriotti, M., E-mail: mattia.capriotti@tuwien.ac.at; Alexewicz, A.; Fleury, C.

2014-03-17

Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V.more » Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.« less

Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors

NASA Astrophysics Data System (ADS)

Yin, Lei; Wang, Zhenxing; Wang, Feng; Xu, Kai; Cheng, Ruiqing; Wen, Yao; Li, Jie; He, Jun

2017-03-01

For multifarious electronic and optoelectronic applications, it is indispensable exploration of stable and simple method to modulate electrical behavior of transition metal dichalcogenides (TMDs). In this study, an effective method to adjust the electrical properties of ambipolar TMDs is developed by introducing the dipole electric field from poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer. The transition from ambipolar to p-type conductive characteristics is realized, and the transistor performances are also significantly enhanced. Hole density of MoTe2- and WSe2-based back-gate field effect transistors increases by 4.4 and 2.5 times. Moreover, the corresponding hole mobilities are strikingly improved from 0.27 to 10.7 cm2 V-1 s-1 and from 1.6 to 59.8 cm2 V-1 s-1, respectively. After optimizing, p-channel MoTe2 phototransistors present ultrahigh responsivity of 3521 A/W, which is superior to most layered phototransistors. The remarkable control of conductive type, carrier concentration, and field-effect mobility of ambipolar TMDs via P(VDF-TrFE) treatment paves a way for realization of high-performance and versatile electronic and optoelectronic devices.

An emergency response mobile robot for operations in combustible atmospheres

NASA Astrophysics Data System (ADS)

Stone, Henry W.; Ohm, Timothy R.

1993-11-01

A mobile, self-powered, self-contained, and remote-controlled robot is presented. The robot is capable of safely operating in a combustible atmosphere and providing information about the atmosphere to the operator. The robot includes non-sparking and non-arcing electro-mechanical and electronic components designed to prevent the robot from igniting the combustible atmosphere. The robot also includes positively pressurized enclosures that house the electromechanical and electronic components of the robot and prevent intrusion of the combustible atmosphere into the enclosures. The enclosures are interconnected such that a pressurized gas injected into any one of the enclosures is routed to all the other enclosures through the interconnections. It is preferred that one or more sealed internal channels through structures intervening between the enclosures be employed. Pressure transducers for detecting if the pressure within the enclosures falls below a predetermined level are included. The robot also has a sensing device for determining the types of combustible substances in the surrounding atmosphere, as well as the concentrations of each type of substance relative to a pre-determined lower explosive limit (LEL). In addition, the sensing device can determine the percent level of oxygen present in the surrounding atmosphere.

Emergency response mobile robot for operations in combustible atmospheres

NASA Astrophysics Data System (ADS)

Stone, Henry W.; Ohm, Timothy R.

1995-08-01

A mobile, self-powered, self-contained, and remote-controlled robot is presented. The robot is capable of safely operating in a combustible atmosphere and providing information about the atmosphere to the operator. The robot includes non-sparking and non-arcing electro-mechanical and electronic components designed to prevent the robot from igniting the combustible atmosphere. The robot also includes positively pressurized enclosures that house the electromechanical and electronic components of the robot and prevent intrusion of the combustible atmosphere into the enclosures. The enclosures are interconnected such that a pressurized gas injected into any one of the enclosures is routed to all the other enclosures through the interconnections. It is preferred that one or more sealed internal channels through structures intervening between the enclosures be employed. Pressure transducers for detecting if the pressure within the enclosures falls below a predetermined level are included. The robot also has a sensing device for determining the types of combustible substances in the surrounding atmosphere, as well as the concentrations of each type of substance relative to a pre-determined lower explosive limit (LEL). In addition, the sensing device can determine the percent level of oxygen present in the surrounding atmosphere.

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Zhao, Jingtao; Yang, Ming; Shi, Wenjing; Lv, Yuanjie; Feng, Zhihong

2016-04-01

The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.

III-V HEMTs: low-noise devices for high-frequency applications

NASA Astrophysics Data System (ADS)

Mateos, Javier

2003-05-01

With the recent development of broadband and satellite communications, one of the main engines for the advance of modern Microelectronics is the fabrication of devices with increasing cutoff frequency and lowest possible level of noise. Even if heterojunction bipolar devices (HBTs) have reached a good frequency performance, the top end of high frequency low-noise applications is monopolized by unipolar devices, mainly HEMTs (High Electron Mobility Transistors). In particular, within the vast family of heterojunction devices, the best results ever reported in the W-band have been obtained with InP based HEMTs using the AlInAs/InGaAs material system, improving those of usual GaAs based pseudomorphic HEMTs. In field effect devices, the reduction of the gate length (Lg) up to the technological limit is the main way to achieve the maximum performances. But the design of the devices is not so simple, when reducing the gate length it is convenient to keep constant the aspect ratio (gate length over gate-to-channel distance) in order to limit short channel effects. This operation can lead to the appearance of other unwanted effects, like the depletion of the channel due to the surface potential or the tunneling of electrons from the channel to the gate. Therefore, in order to optimize the high frequency or the low-noise behavior of the devices (that usually can not be reached together) not only the gate-to-channel distance must be chosen carefully, but also many other technological parameters (both geometrical and electrical): composition of materials, width of the device, length, depth and position of the recess, thickness and doping of the different layers, etc. Historically, these parameters have been optimized by classical simulation techniques or, when such simulations are not physically applicable, by the expensive 'test and error' procedure. With the use of computer simulation, the design optimization can be made in a short time and with no money spent. However, classical modelling of electronic devices meets important difficulties when dealing with advanced transistors, mainly due to their small size, and the Monte Carlo technique appears as the only possible choice

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

NASA Astrophysics Data System (ADS)

Greene, Andrew M.

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1,500 and sub-threshold swing = 340 mV/dec. Split C-V measurements were used to extract an effective channel mobility of muh* = 300 cm2/Vs at Ns = 2 x 1012 cm -2. "Gate-last" MOSFETs grown with an epitaxial p + contact layer were fabricated using selective gate-recess etching techniques. A parasitic "n-channel" limited ION/I OFF ratio and sub-threshold swing, most likely due to effects from the InAs surface layer.

Multiphase modeling of channelized pyroclastic density currents and the effect of confinement on mobility and entrainment

NASA Astrophysics Data System (ADS)

Kubo, A. I.; Dufek, J.

2017-12-01

Around explosive volcanic centers such as Mount Saint Helens, pyroclastic density currents (PDCs) pose a great risk to life and property. Understanding of the mobility and dynamics of PDCs and other gravity currents is vital to mitigating hazards of future eruptions. Evidence from pyroclastic deposits at Mount Saint Helens and one-dimensional modeling suggest that channelization of flows effectively increases run out distances. Dense flows are thought to scour and erode the bed leading to confinement for subsequent flows and could result in significant changes to predicted runout distance and mobility. Here, we present the results of three-dimensional multiphase models comparing confined and unconfined flows using simplified geometries. We focus on bed stress conditions as a proxy for conditions that could influence subsequent erosion and self-channelization. We also explore the controls on gas entrainment in all scenarios to determine how confinement impacts the particle concentration gradient, granular interactions, and mobility.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Energy band offsets of dielectrics on InGaZnO4

NASA Astrophysics Data System (ADS)

Hays, David C.; Gila, B. P.; Pearton, S. J.; Ren, F.

2017-06-01

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous silicon continues to dominate large-format display technology, but a-Si:H has a low electron mobility, μ ˜ 1 cm2/V s. Transparent, conducting metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated electron mobilities of 10-50 cm2/V s and are candidates to replace a-Si:H for TFT backplane technologies. The device performance depends strongly on the type of band alignment of the gate dielectric with the semiconductor channel material and on the band offsets. The factors that determine the conduction and valence band offsets for a given material system are not well understood. Predictions based on various models have historically been unreliable and band offset values must be determined experimentally. This paper provides experimental band offset values for a number of gate dielectrics on IGZO for next generation TFTs. The relationship between band offset and interface quality, as demonstrated experimentally and by previously reported results, is also explained. The literature shows significant variations in reported band offsets and the reasons for these differences are evaluated. The biggest contributor to conduction band offsets is the variation in the bandgap of the dielectrics due to differences in measurement protocols and stoichiometry resulting from different deposition methods, chemistry, and contamination. We have investigated the influence of valence band offset values of strain, defects/vacancies, stoichiometry, chemical bonding, and contamination on IGZO/dielectric heterojunctions. These measurements provide data needed to further develop a predictive theory of band offsets.

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

NASA Astrophysics Data System (ADS)

Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen

2017-03-01

In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations <1 1 0> and <1 0 0> and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90° on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5 nm, 6 nm, 7 nm and 8 nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

Enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target

NASA Astrophysics Data System (ADS)

Ji, Yanling; Duan, Tao; Zhou, Weimin; Li, Boyuan; Wu, Fengjuan; Zhang, Zhimeng; Ye, Bin; Wang, Rong; Wu, Chunrong; Tang, Yongjian

2018-02-01

An enhanced long-distance transport of periodic electron beams in an advanced double layer cone-channel target is investigated using two-dimensional particle-in-cell simulations. The target consists of a cone attached to a double-layer hollow channel with a near-critical-density inner layer. The periodic electron beams are generated by the combination of ponderomotive force and longitudinal laser electric field. Then a stable electron propagation is achieved in the double-layer channel over a much longer distance without evident divergency, compared with a normal cone-channel target. Detailed simulations show that the much better long-distance collimation and guidance of energetic electrons is attributed to the much stronger electromagnetic fields at the inner wall surfaces. Furthermore, a continuous electron acceleration is obtained by the more intense laser electric fields and extended electron acceleration length in the channel. Our investigation shows that by employing this advanced target, both the forward-going electron energy flux in the channel and the energy coupling efficiency from laser to electrons are about threefold increased in comparison with the normal case.

47 CFR 22.805 - Channels for general aviation air-ground service.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 2 2013-10-01 2013-10-01 false Channels for general aviation air-ground... CARRIER SERVICES PUBLIC MOBILE SERVICES Air-Ground Radiotelephone Service General Aviation Air-Ground Stations § 22.805 Channels for general aviation air-ground service. The following channels are allocated...

47 CFR 22.805 - Channels for general aviation air-ground service.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 47 Telecommunication 2 2012-10-01 2012-10-01 false Channels for general aviation air-ground... CARRIER SERVICES PUBLIC MOBILE SERVICES Air-Ground Radiotelephone Service General Aviation Air-Ground Stations § 22.805 Channels for general aviation air-ground service. The following channels are allocated...

47 CFR 22.805 - Channels for general aviation air-ground service.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 2 2014-10-01 2014-10-01 false Channels for general aviation air-ground... CARRIER SERVICES PUBLIC MOBILE SERVICES Air-Ground Radiotelephone Service General Aviation Air-Ground Stations § 22.805 Channels for general aviation air-ground service. The following channels are allocated...

47 CFR 22.805 - Channels for general aviation air-ground service.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 2 2011-10-01 2011-10-01 false Channels for general aviation air-ground... CARRIER SERVICES PUBLIC MOBILE SERVICES Air-Ground Radiotelephone Service General Aviation Air-Ground Stations § 22.805 Channels for general aviation air-ground service. The following channels are allocated...

47 CFR 22.805 - Channels for general aviation air-ground service.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Channels for general aviation air-ground... CARRIER SERVICES PUBLIC MOBILE SERVICES Air-Ground Radiotelephone Service General Aviation Air-Ground Stations § 22.805 Channels for general aviation air-ground service. The following channels are allocated...

47 CFR 22.757 - Channels for basic exchange telephone radio systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Channels for basic exchange telephone radio... CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service Basic Exchange Telephone Radio Systems § 22.757 Channels for basic exchange telephone radio systems. The channels listed in § 22.725 are...

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-29

..., Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components Thereof... certain electronic devices, including mobile phones, mobile tablets, portable music players, and computers... mobile phones, mobile tablets, portable music players, and computers, and components thereof that...

Disruption of ATP-sensitive potassium channel function in skeletal muscles promotes production and secretion of musclin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sierra, Ana, E-mail: ana-sierra@uiowa.edu; Subbotina, Ekaterina, E-mail: ekaterina-subbotina@uiowa.edu; Zhu, Zhiyong, E-mail: zhiyong-zhu@uiowa.edu

Sarcolemmal ATP-sensitive potassium (K{sub ATP}) channels control skeletal muscle energy use through their ability to adjust membrane excitability and related cell functions in accordance with cellular metabolic status. Mice with disrupted skeletal muscle K{sub ATP} channels exhibit reduced adipocyte size and increased fatty acid release into the circulation. As yet, the molecular mechanisms underlying this link between skeletal muscle K{sub ATP} channel function and adipose mobilization have not been established. Here, we demonstrate that skeletal muscle-specific disruption of K{sub ATP} channel function in transgenic (TG) mice promotes production and secretion of musclin. Musclin is a myokine with high homology tomore » atrial natriuretic peptide (ANP) that enhances ANP signaling by competing for elimination. Augmented musclin production in TG mice is driven by a molecular cascade resulting in enhanced acetylation and nuclear exclusion of the transcription factor forkhead box O1 (FOXO1) – an inhibitor of transcription of the musclin encoding gene. Musclin production/secretion in TG is paired with increased mobilization of fatty acids and a clear trend toward increased circulating ANP, an activator of lipolysis. These data establish K{sub ATP} channel-dependent musclin production as a potential mechanistic link coupling “local” skeletal muscle energy consumption with mobilization of bodily resources from fat. Understanding such mechanisms is an important step toward designing interventions to manage metabolic disorders including those related to excess body fat and associated co-morbidities. - Highlights: • ATP-sensitive K{sup +} channels regulate musclin production by skeletal muscles. • Lipolytic ANP signaling is promoted by augmented skeletal muscle musclin production. • Skeletal muscle musclin transcription is promoted by a CaMKII/HDAC/FOXO1 pathway. • Musclin links adipose mobilization to energy use in K{sub ATP} channel deficient skeletal muscle.« less

Premature Mobility of Boulders in Constructed Step-pool River Structures in the Carmel River, CA: The Role of Fish-centric Design Constraints, and Flow on Structural Stability

NASA Astrophysics Data System (ADS)

Smith, D. P.; Chow, K.; Luna, L.

2017-12-01

The 32 m tall San Clemente Dam (Carmel River, CA) was removed in 2015 to eliminate seismic risk and to improve fish passage for all life stages of steelhead (O. mykiss). Reservoir sediment was sequestered in place, rather than released, and a new 1000 m long channel/floodplain system was constructed to circumvent the stored sediment. The channel comprised a 250 m long, meandering low-gradient reach and a 750 m reach with alternating step-pool sections, plane beds, and resting pools. The floodprone surfaces were compacted, wrapped in geotechnical fabric and vegetated. This study analyzes the geomorphic evolution of the new channel system during its first two years of service based upon detailed field inspection, SfM photogrammetry, orthophoto analysis, and 2d hydraulic modeling. A significant proportion of the step-pool structures experienced premature mobility and several reaches of engineered stream banks were eroded in the first year. Individual, six-tonne boulders were mobilized despite experiencing less than the 3 yr flow. The channel and floodplain were fully repaired following the first year. Strong flows (two 10-yr floods and a 30-yr flood) during the second year catastrophically altered the constructed channel and floodplain. While the low-gradient reach remained intact, each of the original step-pool structures was either completely mobilized and destroyed, buried by gravel, or bypassed by the subsequent channel. Despite the overall structural failure of the constructed channel, the new channel does not block steelhead migration, and can be serendipitously considered an ecological success. Step-pool design was constrained by a fish-centric requirement that steps be 1 ft tall or less. Some constructed "resting pools" filled rather than transport sediment. Using fish-centric constraints in the design, rather than strictly fluvial geomorphic principles may have contributed to early failure of the step-pool structures and other parts of the system.

Analysis on Multicast Routing Protocols for Mobile Ad Hoc Networks

NASA Astrophysics Data System (ADS)

Xiang, Ma

As the Mobile Ad Hoc Networks technologies face a series of challenges like dynamic changes of topological structure, existence of unidirectional channel, limited wireless transmission bandwidth, the capability limitations of mobile termination and etc, therefore, the research to mobile Ad Hoc network routings inevitablely undertake a more important task than those to other networks. Multicast is a mode of communication transmission oriented to group computing, which sends the data to a group of host computers by using single source address. In a typical mobile Ad Hoc Network environment, multicast has a significant meaning. On the one hand, the users of mobile Ad Hoc Network usually need to form collaborative working groups; on the other hand, this is also an important means of fully using the broadcast performances of wireless communication and effectively using the limited wireless channel resources. This paper summarizes and comparatively analyzes the routing mechanisms of various existing multicast routing protocols according to the characteristics of mobile Ad Hoc network.

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao; Qiu, Zhi-Jun

2010-10-01

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Description of a Mobile-based Electronic Informed Consent System Development.

PubMed

Hwang, Min-A; Kwak, In Ja

2015-01-01

Seoul National University Hospital constructed and implemented a computer-based informed consent system in December 2011. As of 2013, 30% of the informed consents were still filled out manually on paper. Patients and medical staff continuously suggested the implementation of a system for electronic informed consent using portable devices. Therefore, a mobile-based system for electronic informed consent was developed in 2013 to prevent the issues that arise with computer-based systems and paper informed consent. The rate of filling out electronic informed consent increased from 69% to 95% following the implementation of the mobile-based electronic informed consent. This construction of a mobile-based electronic informed consent system would be a good reference point for the development of a mobile-based Electronic Medical Record and for various mobile system environments in medical institutions.

Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast.

PubMed

Crimp, Martin A

2006-05-01

The imaging and characterization of dislocations is commonly carried out by thin foil transmission electron microscopy (TEM) using diffraction contrast imaging. However, the thin foil approach is limited by difficult sample preparation, thin foil artifacts, relatively small viewable areas, and constraints on carrying out in situ studies. Electron channeling imaging of electron channeling contrast imaging (ECCI) offers an alternative approach for imaging crystalline defects, including dislocations. Because ECCI is carried out with field emission gun scanning electron microscope (FEG-SEM) using bulk specimens, many of the limitations of TEM thin foil analysis are overcome. This paper outlines the development of electron channeling patterns and channeling imaging to the current state of the art. The experimental parameters and set up necessary to carry out routine channeling imaging are reviewed. A number of examples that illustrate some of the advantages of ECCI over thin foil TEM are presented along with a discussion of some of the limitations on carrying out channeling contrast analysis of defect structures. Copyright (c) 2006 Wiley-Liss, Inc.

FLTSATCOM interoperability applications

NASA Astrophysics Data System (ADS)

Woolford, Lynn

A mobile Fleet Satellite Communications (FLTSATCOM) system called the Mobile Operational Control Center (MOCC) was developed which has demonstrated the ability to be interoperable with many of the current FLTSATCOM command and control channels. This low-cost system is secure in all its communications, is lightweight, and provides a gateway for other communications formats. The major elements of this system are made up of a personal computer, a protocol microprocessor, and off-the-shelf mobile communication components. It is concluded that with both FLTSATCOM channel protocol and data format interoperability, the MOCC has the ability provide vital information in or near real time, which significantly improves mission effectiveness.

The Mobility and Dispersal of Augmented Gravel in Upland Channels: a Knowledge-limited Practise in Supply-limited Channels

NASA Astrophysics Data System (ADS)

Downs, P. W.; Gilvear, D. J.

2017-12-01

Most river restoration research has been directed at rivers in the highly populated alluvial lowlands: significantly less is known about effectively rehabilitating upland channels, in part because the dynamics of sediment transfer are less well understood. Upland gravel augmentation is thus both a somewhat unproven method for rehabilitating degraded aquatic habitats in sediment-poor reaches, but also a natural experiment in better understanding sediment dynamics in steep, hydraulically-complex river channels. Monitoring on the River Avon in SW England since Water Year (WY) 2015 uses seismic impact plates, RFID-tagged particles and detailed channel bed mapping to establish the mobility rates of augmented particles, their dispersal distances and settling locations relative to flows received. Particles are highly, and equally, mobile: in WY2015, 17 sub-bankfull flows moved at least 60% of augmented particles with volumetric movement non-linearly correlated to flow energy but not to particle size. Waning rates of transport over the year suggest supply limitations. This relationship breaks down early in WY2017 where a two-year flow event moved 40% of the particles in just two months - confounding factors may include particle mass differences and particle supplies from upstream. Median particle travel distances correlate well to energy applied and suggest a long-tailed fan of dispersal with supplemental controls including channel curvature, boulder presence and stream power. Locally, particles are deposited preferentially around boulders and in sheltered river margins but also perched in clusters above the low-flow channel. High tracer mobility makes median transport distances highly dependent on the survey length - in WY2017 some particles travelled 300 m in a 3-month period that included the two-year flood event. Further, in WY2017 median transport distance as a function of volumetric transport suggested significant transport beyond the target reach. The observed particle dynamics thus have implications both for the biological effectiveness of gravel augmentation and the efficacy criterion of `minimum mobility'. They also reflect the challenges inherent to constraint-limited natural experiments that are, conversely, important in proving the value of geomorphology to resource managers.

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer.

PubMed

Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

2017-02-08

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (T) noise measurements to understand the Coulomb scattering mechanism in the MoS 2 channel in the presence of h-BN buffer layer on the silicon dioxide (SiO 2 ) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (α SC ) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of h-BN on SiO 2 provides the suppression of α SC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO 2 at T = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping-detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal-MoS 2 contact region.

Organic transistors for electrophysiology (Presentation Recording)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2015-10-01

Efficient local transduction of biological signals is of critical importance for mapping brain activity and diagnosing pathological conditions. Traditional devices used to record electrophysiological signals are passive electrodes that require (pre)amplification with downstream electronics. Organic electrochemical transistors (OECTs) that utilize conducting polymer films as the channel have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance (>3 mS). The materials properties and physics of such transistors, however, remains largely unexplored thus limiting their potential. Here we show that the uptake of ionic charge from an electrolyte into a poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) OECT channel leads to a dependence of the effective capacitance on the entire volume of the film. Subsequently, device transconductance and time response vary with channel thickness, a defining characteristic that differentiates OECTs from field effect transistors, and provides a new degree of freedom for device engineering. Using this understanding we tailor OECTs for a variety of low (1-100 Hz) and high (1-10 kHz) frequency applications, including human electroencephalography, where high transconductance devices impart richer signal content without the need for additional amplification circuitry. We also show that the materials figure of merit OECTs is the product of hole mobility and volumetric capacitance of the channel, leading to design rules for novel high performance materials.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Personal technology use by U.S. military service members and veterans: an update.

PubMed

Bush, Nigel E; Wheeler, William M

2015-04-01

Although personal electronic devices, such as mobile phones, computers, and tablets, increasingly are being leveraged as vehicles for health in the civilian world, almost nothing is known about personal technology use in the U.S. military. In 2012 we conducted a unique survey of personal technologies used by U.S. military service members. However, with the rapidly growing sophistication of personal technology and changes in consumer habits, that knowledge must be continuously updated to be useful. Accordingly, we recently surveyed new samples of active duty service members, National Guard and Reserve, and veterans. We collected data by online surveys in 2013 from 239 active, inactive, and former service members. Online surveys were completed in-person via laptop computers at a large military installation and remotely via Web-based surveys posted on the Army Knowledge Online Web site and on a Defense Center Facebook social media channel. We measured high rates of personal technology use by service members at home across popular electronic media. The most dramatic change since our earlier survey was the tremendous increase in mobile phone use at home for a wide variety of purposes. Participants also reported moderate non-work uses of computers and tablets while on recent deployment to Iraq and Afghanistan, but almost no mobile phone use, ostensibly because of military restrictions in the war zone. These latest results will enable researchers and technology developers target their efforts on the most promising and popular technologies for psychological health in the military.

Development of informational-communicative system, created to improve medical help for family medicine doctors.

PubMed

Smiianov, Vladyslav A; Dryha, Natalia O; Smiianova, Olha I; Obodyak, Victor K; Zudina, Tatyana O

2018-01-01

Introduction: Today mobile health`s protection service has no concrete meaning. As an research object it was called mHealth and named by Global observatory of electronic health`s protection as "Doctor and social health practice that can be supported by any mobile units (mobile phones or smartphones), units for patient`s health control, personal computers and other units of non-wired communication". An active usage of SMS in programs for patients` cure regimen keeping was quiet predictable. Mobile and electronic units only begin their development in medical sphere. Thus, to solve all health`s protection system reformation problems a special memorandum about cooperation in creating E-Health system in Ukraine was signed. The aim: Development of ICS for monitoring and non-infection ill patients` informing system optimization as a first level of medical help. Materials and methods: During research, we used systematical approach, meta-analysis, informational-analytical systems` schemes projection, expositive modeling. Developing the backend (server part of the site), we used next technologies: 1) the Apache web server; 2) programming language PHP; 3) Yii 2 PHP Framework. In the frontend developing were used the following technologies (client part of the site): 1) Bootstrap 3; 2) Vue JS Framework. Results and conclusions: Created duo-channel system "doctor-patient" and "patient-doctor" will allow usual doctors of family medicine (DFM) take the interactive dispensary cure and avoid uncontrolled illness progress. Doctor will monitor basic physical data of patient`s health and curing process. The main goal is to create automatic system to allow doctor regularly write periodical or non-periodical notifications, get patients` questioning answers and spread information between doctor and patient; that will optimize work of DFMs.

An efficient protocol for providing integrated voice/data services to mobiles over power-limited satellite channels

NASA Astrophysics Data System (ADS)

Bose, Sanjay K.

1991-02-01

Various mobile satellite communication systems are being developed for providing integrated voice/data services over a shared satellite transponder which is power-limited in nature. A common strategy is to use slotted ALOHA request channels to request channel assignments for voice/data calls from a network management station. To maximize efficiency in a system with a power-limited satellite transponder, it is proposed that the bursty nature of voice sources be exploited by the NMS to 'over-assign' channels. This may cause problems of inefficiency and potential instability, as well as a degradation in the quality of service. Augmenting this with the introduction of simple state-dependent control procedures provides systems which exhibit more desirable operational features.

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr

We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasingmore » temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.« less

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

DTIC Science & Technology

2009-07-01

making III–V FETs has been different than for silicon FETs. Growth techniques such as molecular beam epitaxy (MBE) are used to create heterostructures in...lities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures...article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel

Investigation of different classifiers and channel configurations of a mobile P300-based brain-computer interface.

PubMed

Ludwig, Simone A; Kong, Jun

2017-12-01

Innovative methods and new technologies have significantly improved the quality of our daily life. However, disabled people, for example those that cannot use their arms and legs anymore, often cannot benefit from these developments, since they cannot use their hands to interact with traditional interaction methods (such as mouse or keyboard) to communicate with a computer system. A brain-computer interface (BCI) system allows such a disabled person to control an external device via brain waves. Past research mostly dealt with static interfaces, which limit users to a stationary location. However, since we are living in a world that is highly mobile, this paper evaluates a speller interface on a mobile phone used in a moving condition. The spelling experiments were conducted with 14 able-bodied subjects using visual flashes as the stimulus to spell 47 alphanumeric characters (38 letters and 9 numbers). This data was then used for the classification experiments. In par- ticular, two research directions are pursued. The first investigates the impact of different classification algorithms, and the second direction looks at the channel configuration, i.e., which channels are most beneficial in terms of achieving the highest classification accuracy. The evaluation results indicate that the Bayesian Linear Discriminant Analysis algorithm achieves the best accuracy. Also, the findings of the investigation on the channel configuration, which can potentially reduce the amount of data processing on a mobile device with limited computing capacity, is especially useful in mobile BCIs.

Expression of the water channel protein, aquaporin-4, in mouse brains exposed to mobile telephone radiofrequency fields.

PubMed

Finnie, John W; Blumbergs, Peter C; Cai, Zhao; Manavis, Jim

2009-01-01

To determine whether exposure to mobile telephone radiofrequency (RF) fields, either acutely or long-term, produces up-regulation of the water channel protein, aquaporin-4 (AQP-4). Using a purpose-designed exposure system at 900 MHz, mice were given a single, far-field whole body exposure at a specific absorption rate of 4 W/kg for 60 minutes or a similar exposure on 5 successive days/week for 104 weeks. Control mice were sham-exposed or freely mobile in a cage to control for any stress caused by restraint in the exposure module. A positive control group was given a clostridial toxin known to cause microvascular endothelial injury, severe vasogenic oedema and upregulation of AQP-4. Brains were perfusion fixed with 4% paraformaldehyde, coronal sections cut from six levels, and immunostained for the principal water channel protein in brain, AQP-4. There was no increase in AQP-4 expression in brains exposed to mobile phone microwaves compared to control (sham exposed and freely moving caged mice) brains after short or protracted exposure, while AQP-4 was substantially upregulated in the brains of mice given the clostridial toxin. Brains exposed to mobile telephone RF fields for a short (60 minutes) or long (2 years) duration did not show any immunohistochemically detectable up-regulation of the water channel protein, AQP-4, suggesting that there was no significant increase in blood-brain barrier permeability

A study and experiment plan for digital mobile communication via satellite

NASA Technical Reports Server (NTRS)

Jones, J. J.; Craighill, E. J.; Evans, R. G.; Vincze, A. D.; Tom, N. N.

1978-01-01

The viability of mobile communications is examined within the context of a frequency division multiple access, single channel per carrier satellite system emphasizing digital techniques to serve a large population of users. The intent is to provide the mobile users with a grade of service consistant with the requirements for remote, rural (perhaps emergency) voice communications, but which approaches toll quality speech. A traffic model is derived on which to base the determination of the required maximum number of satellite channels to provide the anticipated level of service. Various voice digitalization and digital modulation schemes are reviewed along with a general link analysis of the mobile system. Demand assignment multiple access considerations and analysis tradeoffs are presented. Finally, a completed configuration is described.

Mobility-Resolved Ion Selection in Uniform Drift Field Ion Mobility Spectrometry/Mass Spectrometry: Dynamic Switching in Structures for Lossless Ion Manipulations

DOE PAGES

Webb, Ian K.; Garimella, Sandilya V. B.; Tolmachev, Aleksey V.; ...

2014-09-15

A Structures for Lossless Ion Manipulations (SLIM) module that allows ion mobility separations and the switching of ions between alternative drift paths is described. The SLIM switch component has a “Tee” configuration and allows switching of ions between a linear path and a 90-degree bend. By controlling switching times, ions can be deflected to an alternative channel as a function of their mobilities. In the initial evaluation the switch is used in a static mode and shown compatible with high performance ion mobility separations at 4 torr. In the “dynamic mode” we show that mobility-selected ions can be switched intomore » the alternative channel, and that various ion species can be independently selected based on their mobilities for time-of-flight mass spectrometer (TOF MS) IMS detection and mass analysis. Ultimately, this development also provides the basis for e.g. the selection of specific mobilities for storage and accumulation, and key modules for the assembly of SLIM devices enabling much more complex sequences of ion manipulations.« less

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

PubMed

Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

2017-11-28

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure-Property Relationships

PubMed Central

Jiang, Hui; Ye, Jun; Hu, Peng; Wei, Fengxia; Du, Kezhao; Wang, Ning; Ba, Te; Feng, Shuanglong; Kloc, Christian

2014-01-01

The fluorination of p-type metal phthalocyanines produces n-type semiconductors, allowing the design of organic electronic circuits that contain inexpensive heterojunctions made from chemically and thermally stable p- and n-type organic semiconductors. For the evaluation of close to intrinsic transport properties, high-quality centimeter-sized single crystals of F16CuPc, F16CoPc and F16ZnPc have been grown. New crystal structures of F16CuPc, F16CoPc and F16ZnPc have been determined. Organic single-crystal field-effect transistors have been fabricated to study the effects of the central metal atom on their charge transport properties. The F16ZnPc has the highest electron mobility (~1.1 cm2 V−1 s−1). Theoretical calculations indicate that the crystal structure and electronic structure of the central metal atom determine the transport properties of fluorinated metal phthalocyanines. PMID:25524460

Superconductivity in metal coated graphene

NASA Astrophysics Data System (ADS)

Uchoa, Bruno; Castro Neto, Antonio

2007-03-01

Graphene, a single atomic layer of graphite, is a two dimensional (2D) zero gap insulator with a high electronic mobility between nearest neighbor carbon sites. The unique electronic properties of graphene, from the semi-metallic behavior to the observation of an anomalous quantum Hall effect and a zero field quantized minimum of conductivity derive from the relativistic nature of its quasiparticles. By doping graphene, it behaves in several aspects as a conventional Fermi liquid, where electrons may form Cooper pairs by coupling with a bosonic mode. In this talk, we develop a mean-field phenomenology of superconductivity in a honeycomb lattice. We predict the possibility of two distinct phases, a singlet s-wave phase and a novel p+ip wave phase in the singlet channel. At half filling, the p+ip phase is gapless and superconductivity is a hidden order. We propose a few possible sources of Cooper pairing instability in graphene coated with alkaline and transition metals, and similar low dimensional graphene based devices.

High-performance carbon nanotube thin-film transistors on flexible paper substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Na; Yun, Ki Nam; Yu, Hyun-Yong

Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10{sup 6} and a field-effect mobility of approximately 3 cm{sup 2}/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.

Influence of thermocleavable functionality on organic field-effect transistor performance of small molecules

NASA Astrophysics Data System (ADS)

Mahale, Rajashree Y.; Dharmapurikar, Satej S.; Chini, Mrinmoy Kumar; Venugopalan, Vijay

2017-06-01

Diketopyrrolopyrrole based donor-acceptor-donor conjugated small molecules using ethylene dioxythiophene as a donor was synthesized. Electron deficient diketopyrrolopyrrole unit was substituted with thermocleavable (tert-butyl acetate) side chains. The thermal treatment of the molecules at 160 °C eliminated the tert-butyl ester group results in the formation of corresponding acid. Optical and theoretical studies revealed that the molecules adopted a change in molecular arrangement after thermolysis. The conjugated small molecules possessed p-channel charge transport characteristics in organic field effect transistors. The charge carrier mobility was increased after thermolysis of tert-butyl ester group to 5.07 × 10-5 cm2/V s.

47 CFR 22.905 - Channels for cellular service.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Channels for cellular service. 22.905 Section 22.905 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.905 Channels for cellular service. The following...

47 CFR 22.907 - Coordination of channel usage.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Coordination of channel usage. 22.907 Section 22.907 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.907 Coordination of channel usage. Licensees in the...

47 CFR 22.905 - Channels for cellular service.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 2 2014-10-01 2014-10-01 false Channels for cellular service. 22.905 Section 22.905 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.905 Channels for cellular service. The following...

47 CFR 22.907 - Coordination of channel usage.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 2 2013-10-01 2013-10-01 false Coordination of channel usage. 22.907 Section 22.907 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.907 Coordination of channel usage. Licensees in the...

47 CFR 22.907 - Coordination of channel usage.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 2 2014-10-01 2014-10-01 false Coordination of channel usage. 22.907 Section 22.907 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.907 Coordination of channel usage. Licensees in the...

47 CFR 22.905 - Channels for cellular service.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 2 2013-10-01 2013-10-01 false Channels for cellular service. 22.905 Section 22.905 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Cellular Radiotelephone Service § 22.905 Channels for cellular service. The following...

Assessment of coarse sediment mobility in the Black Canyon of the Gunnison River, Colorado.

PubMed

Dubinski, Ian M; Wohl, Ellen

2007-07-01

The Gunnison River in the Black Canyon of the Gunnison National Park (BCNP) near Montrose, Colorado is a mixed gravel and bedrock river with ephemeral side tributaries. Flow rates are controlled immediately upstream by a diversion tunnel and three reservoirs. The management of the hydraulic control structures has decreased low-frequency, high-stage flows, which are the dominant geomorphic force in bedrock channel systems. We developed a simple model to estimate the extent of sediment mobilization at a given flow in the BCNP and to evaluate changes in the extent and frequency of sediment mobilization for flow regimes before and after flow regulation in 1966. Our methodology provides a screening process for identifying and prioritizing areas in terms of sediment mobility criteria when more precise systematic field data are unavailable. The model uses the ratio between reach-averaged bed shear stress and critical shear stress to estimate when a particular grain size is mobilized for a given reach. We used aerial photography from 1992, digital elevation models, and field surveys to identify individual reaches and estimate reach-averaged hydraulic geometry. Pebble counts of talus and debris fan deposits were used to estimate regional colluvial grain-size distributions. Our results show that the frequency of flows mobilizing river bank sediment along a majority of the Gunnison River in the BCNP has significantly declined since 1966. The model results correspond well to those obtained from more detailed, site-specific field studies carried out by other investigators. Decreases in the frequency of significant sediment-mobilizing flows were more pronounced for regions within the BCNP where the channel gradient is lower. Implications of these results for management include increased risk of encroachment of vegetation on the active channel and long-term channel narrowing by colluvial deposits. It must be recognized that our methodology represents a screening of regional differences in sediment mobility. More precise estimates of hydraulic and sediment parameters would likely be required for dictating quantitative management objectives within the context of sediment mobility and sensitivity to changes in the flow regime.

Electron drift velocity and mobility in graphene

NASA Astrophysics Data System (ADS)

Dong, Hai-Ming; Duan, Yi-Feng; Huang, Fei; Liu, Jin-Long

2018-04-01

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Dissipationless transport of spin-polarized electrons and Cooper pairs in an electron waveguide

NASA Astrophysics Data System (ADS)

Levy, J.; Annadi, A.; Lu, S.; Cheng, G.; Tylan-Tyler, A.; Briggeman, M.; Tomczyk, M.; Huang, M.; Pekker, D.; Irvin, P.; Lee, H.; Lee, J.-W.; Eom, C.-B.

Electron systems undergo profound changes in their behavior when constrained to move along a single axis. To date, clean one-dimensional (1D) electron transport has only been observed in carbon-based nanotubes and nanoribbons, and compound semiconductor nanowires. Complex-oxide heterostructures can possess conductive two-dimensional (2D) interfaces with much richer chemistries and properties, e.g., superconductivity, but with mobilities that appear to preclude ballistic transport in 1D. Here we show that nearly ideal 1D electron waveguides exhibiting ballistic transport of electrons and non-superconducting Cooper pairs can be formed at the interface between the two band insulators LaAlO3 and SrTiO3. The electron waveguides possess gate and magnetic-field selectable spin and charge degrees of freedom, and can be tuned to the one-dimensional limit of a single spin-polarized quantum channel. The strong attractive electron-electron interactions enable a new mode of dissipationless transport of electron pairs that is not superconducting. The selectable spin and subband quantum numbers of these electron waveguides may be useful for quantum simulation, quantum informatio We gratefully acknowledge financial support from ONR N00014-15-1-2847 (JL), AFOSR (FA9550-15-1-0334 (CBE) and FA9550-12-1-0057 (JL, CBE)), AOARD FA2386-15-1-4046 (CBE) and NSF (DMR-1104191 (JL), DMR-1124131 (CBE, JL) and DMR-1234096 (CBE)).

Flood plain and channel dynamics of the Quinault and Queets Rivers, Washington, USA

USGS Publications Warehouse

O'Connor, J. E.; Jones, M.A.; Haluska, T.L.

2003-01-01

Observations from this study and previous studies on the Queets River show that channel and flood-plain dynamics and morphology are affected by interactions between flow, sediment, and standing and entrained wood, some of which likely involve time frames similar to 200–500-year flood-plain half-lives. On the upper Quinault River and Queets River, log jams promote bar growth and consequent channel shifting, short-distance avulsions, and meander cutoffs, resulting in mobile and wide active channels. On the lower Quinault River, large portions of the channel are stable and flow within vegetated flood plains. However, locally, channel-spanning log jams have caused channel avulsions within reaches that have been subsequently mobile for several decades. In all three reaches, log jams appear to be areas of conifer germination and growth that may later further influence channel and flood-plain conditions on long time scales by forming flood-plain areas resistant to channel migration and by providing key members of future log jams. Appreciation of these processes and dynamics and associated temporal and spatial scales is necessary to formulate effective long-term approaches to managing fluvial ecosystems in forested environments.

78 FR 23593 - Certain Mobile Electronic Devices Incorporating Haptics; Termination of Investigation

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-19

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices... this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov... mobile electronic devices incorporating haptics that infringe certain claims of six Immersion patents. 77...

Large wood storage, longitudinal distribution and mobility in channel segments of four mountain rivers, Chile

NASA Astrophysics Data System (ADS)

Iroume, A.; Mao, L.; Andreoli, A.; Ulloa, H.

2013-12-01

In Chile, besides an anecdotal reference to in-stream wood by Vidal Gormaz (1875), the first report on LW is the one by Andreoli et al. (2007). Since then, more abundant research has developed, focusing mainly on morphologic and hydraulic functions (Comiti et al., 2008; Mao et al., 2008, 2010; Iroumé at al., 2010, 2011; Ulloa et al., 2011), and also on the ecology of low order channels (Vera et al., 2012). Large wood storage, longitudinal distribution and mobility have been studied for several periods in channel segments of four mountain catchments (Pichún, El Toro, Tres Arroyos and Vuelta de Zorra) in southern Chile. The surveyed segments were divided into individual reaches, and the length of each reach was calculated using a laser distance meter and mean individual reach bankfull width and depth were obtained by averaging measurements in cross-sections. All wood pieces found within the bankfull channel more than 10 cm in diameter and 1 m in length were measured and their position was referenced to natural elements and to numbered wooden stakes indicating every reach limit. Several of these wood elements were tagged to study LW mobilization. A 1.54 km-long segment divided into 17 individual reaches was first surveyed in the Tres Arroyos during March-April 2005, and then re-surveyed in November 2008 when the study segment was extended to a total length of 2.07 km with the addition of 5 new individual reaches. Pichún, El Toro and Vuelta de Zorra were first surveyed from November 2008 to February 2009. The length of the channel segments is 1.0 (12 reaches), 2.2 (17 reaches) and 1.56 km (16 reaches) for Pichún, El Toro and Vuelta de Zorra, respectively. These segments have been re-surveyed after every winter rainy season to study LW recruitment and mobility. Using the area of the bankfull channel as reference, total LW volume was 54 m3/ha in Pichún, 202 m3/ha in El Toro, 1449 m3/ha for Tres Arroyos and 109 m3/ha for Vuelta de Zorra. The LW travel distance and travel distance/piece diameter ratio decreased with increasing piece length/mean bankfull ratio. LW mobility (in %, i.e. the ratio between mobilized tagged wood elements and the total number of tagged LW) was significantly higher in periods where maximum water level exceeded channel bankfull height. However, LW diameter, length and travel distance showed no significant variation between periods with flows exceeding and with flows less than bankfull stage. These results contribute to understand the complexity of LW mobilization processes, and can be used to consider wood transport along with peak discharge in designing bridges and culverts in large wood dominated mountain channels. This research is undertaken through Fondecyt Project 1110609.

Non-cross talk multi-channel photomultiplier using guided electron multipliers

DOEpatents

Gomez, J.; Majewski, S.; Weisenberger, A.G.

1995-09-26

An improved multi-channel electron multiplier is provided that exhibits zero cross-talk and high rate operation. Resistive material input and output masks are employed to control divergence of electrons. Electron multiplication takes place in closed channels. Several embodiments are provided for these channels including a continuous resistive emissive multiplier and a discrete resistive multiplier with discrete dynode chains interspaced with resistive layers-masks. Both basic embodiments provide high gain multiplication of electrons without accumulating surface charges while containing electrons to their proper channels to eliminate cross-talk. The invention can be for example applied to improve the performance of ion mass spectrometers, positron emission tomography devices, in DNA sequencing and other beta radiography applications and in many applications in particle physics. 28 figs.

Non cross talk multi-channel photomultiplier using guided electron multipliers

DOEpatents

Gomez, Javier; Majewski, Stanislaw; Weisenberger, Andrew G.

1995-01-01

An improved multi-channel electron multiplier is provided that exhibits zero cross-talk and high rate operation. Resistive material input and output masks are employed to control divergence of electrons. Electron multiplication takes place in closed channels. Several embodiments are provided for these channels including a continuous resistive emissive multiplier and a discrete resistive multiplier with discrete dynode chains interspaced with resistive layers-masks. Both basic embodiments provide high gain multiplication of electrons without accumulating surface charges while containing electrons to their proper channels to eliminate cross-talk. The invention can be for example applied to improve the performance of ion mass spectrometers, positron emission tomography devices, in DNA sequencing and other beta radiography applications and in many applications in particle physics.

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shervin, Shahab; Asadirad, Mojtaba; Materials Science and Engineering Program, University of Houston, Houston, Texas 77204

This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strainmore » in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.« less

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Danhong; Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106; Gumbs, Godfrey

2015-11-15

For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of two-electron states at low temperatures as the channel becomes wide. In this regime, the Coulomb effect on the two-electron states is calculated and found to lead to four split energy levels, including two anticrossing-level and two crossing-level states. Moreover, due to the interplay of anticrossing and crossing effects, our calculations reveal that the ground two-electron state will switch from one anticrossing state (strong confinement) to a crossing state (intermediate confinement) as the channel width gradually increases andmore » then back to the original anticrossing state (weak confinement) as the channel width becomes larger than a threshold value. This switching behavior leaves a footprint in the ballistic conductance as well as in the diffusion thermoelectric power of electrons. Such a switching is related to the triple spin degeneracy as well as to the Coulomb repulsion in the central region of the channel, which separates two electrons away and pushes them to different channel edges. The conductance reoccurrence region expands from the weak to the intermediate confinement regime with increasing electron density.« less

Wireless Channel Characterization: Modeling the 5 GHz Microwave Landing System Extension Band for Future Airport Surface Communications

NASA Technical Reports Server (NTRS)

Matolak, D. W.; Apaza, Rafael; Foore, Lawrence R.

2006-01-01

We describe a recently completed wideband wireless channel characterization project for the 5 GHz Microwave Landing System (MLS) extension band, for airport surface areas. This work included mobile measurements at large and small airports, and fixed point-to-point measurements. Mobile measurements were made via transmission from the air traffic control tower (ATCT), or from an airport field site (AFS), to a receiving ground vehicle on the airport surface. The point-to-point measurements were between ATCT and AFSs. Detailed statistical channel models were developed from all these measurements. Measured quantities include propagation path loss and power delay profiles, from which we obtain delay spreads, frequency domain correlation (coherence bandwidths), fading amplitude statistics, and channel parameter correlations. In this paper we review the project motivation, measurement coordination, and illustrate measurement results. Example channel modeling results for several propagation conditions are also provided, highlighting new findings.

Thermoplastic microchannel fabrication using carbon dioxide laser ablation.

PubMed

Wang, Shau-Chun; Lee, Chia-Yu; Chen, Hsiao-Ping

2006-04-14

We report the procedures of machining microchannels on Vivak co-polyester thermoplastic substrates using a simple industrial CO(2) laser marker. To avoid overheating the substrates, we develop low-power marking techniques in nearly anaerobic environment. These procedures are able to machine microchannels at various aspect ratios. Either straight or serpent channel can be easily marked. Like the wire-embossed channel walls, the ablated channel surfaces become charged after alkaline hydrolysis treatment. Stable electroosmotic flow in the charged conduit is observed to be of the same order of magnitude as that in fused silica capillary. Typical dynamic coating protocols to alter the conduit surface properties are transferable to the ablated channels. The effects of buffer acidity on electroosmotic mobility in both bare and coated channels are similar to those in fused silica capillaries. Using video microscopy we also demonstrate that this device is useful in distinguishing the electrophoretic mobility of bare and latex particles from that of functionalized ones.

Architectures and protocols for an integrated satellite-terrestrial mobile system

NASA Technical Reports Server (NTRS)

Delre, E.; Dellipriscoli, F.; Iannucci, P.; Menolascino, R.; Settimo, F.

1993-01-01

This paper aims to depict some basic concepts related to the definition of an integrated system for mobile communications, consisting of a satellite network and a terrestrial cellular network. In particular three aspects are discussed: (1) architecture definition for the satellite network; (2) assignment strategy of the satellite channels; and (3) definition of 'internetworking procedures' between cellular and satellite network, according to the selected architecture and the satellite channel assignment strategy.

Tuneable photoconductivity and mobility enhancement in printed MoS2/graphene composites

NASA Astrophysics Data System (ADS)

Kelly, Adam G.; Murphy, Conor; Vega-Mayoral, Victor; Harvey, Andrew; Sajad Esmaeily, Amir; Hallam, Toby; McCloskey, David; Coleman, Jonathan N.

2017-12-01

With the aim of increasing carrier mobility in nanosheet-network devices, we have investigated MoS2-graphene composites as active regions in printed photodetectors. Combining liquid exfoliation and inkjet-printing, we fabricated all-printed photodetectors with graphene electrodes and MoS2-graphene composite channels with various graphene mass fractions (0  ⩽  M f  ⩽  16 wt%). The increase in channel dark conductivity with M f was consistent with percolation theory for composites below the percolation threshold. While the photoconductivity increased with graphene content, it did so more slowly than the dark conductivity, such that the fractional photoconductivity decayed rapidly with increasing M f. We propose that both mobility and dark carrier density increase with graphene content according to percolation-like scaling laws, while photo-induced carrier density is essentially independent of graphene loading. This leads to percolation-like scaling laws for both photoconductivity and fractional photoconductivity—in excellent agreement with the data. These results imply that channel mobility and carrier density increase up to 100-fold with the addition of 16 wt% graphene.

Baseband pulse shaping for pi /4 FQPSK in nonlinearly amplified mobile channels

NASA Astrophysics Data System (ADS)

Subasinghe-Dias, Dileeka; Feher, Kamilo

1994-10-01

We apply baseband pulse shaping techniques for pi /4 QPSK in order to reduce the spectral regeneration of the bandlimited carrier after nonlinear amplification. These Feher's patented techniques, namely, pi /4 FQPSK (superposed QPSK) and pi /4 CTPSK (controlled transition PSK), may also be noncoherently demodulated. Application of these techniques is in fast fading, power efficient channels, typical of the mobile radio environment. Patents related to FQPSK are described. Computer simulation and experimental studies demonstrate that with these baseband waveshaping techniques, carrier envelope fluctuations are significantly reduced, and the out-of-band power after nonlinear amplification is suppressed by up to 20 dB compared to pi /4 QPSK. In frequency noninterleaved land or satellite mobile radio systems operating in a nonlinear, fading and ACI (adjacent channel interference) environment, these techniques may achieve 20%-50% higher spectral efficiency compared to pi /4 QPSK. In mobile cellular systems using pi /4 QPSK, such as the new North American and the Japanese digital cellular systems, the application of these baseband pulse shapes may allow more convenient and less costly amplifier linearization.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Exploring the Use of Electronic Mobile Technologies among Distance Learners in Rural Communities for Safe and Disruptive Learning

ERIC Educational Resources Information Center

Ntloedibe-Kuswani, Gomang Seratwa

2013-01-01

Several studies indicated the potential of electronic mobile technologies in reaching (safe learning) under-served communities and engaging (disruptive learning) disadvantaged peoples affording them learning experiences. However, the potential benefits of (electronic mobile learning) e-mobile learning have not been well understood from the…

Channel-dynamic control on the establishment of riparian trees after large floods in northwestern California

Treesearch

Thomas E. Lisle

1989-01-01

Abstract - Large floods in northwestern California in the past two decades have mobilized extensive areas of valley floors, removed streamside trees, and widened channels. Channel cross sections were surveyed to illustrate an hypothesis on the linkage between sediment transport, colonization of channel margins by trees, and streambank recovery. Riparian trees, e.g.,...

Lateral power MOSFETs in silicon carbide

NASA Astrophysics Data System (ADS)

Spitz, Jan

2001-07-01

Because of its large bandgap, its high critical electric field, and its high quality native SiO2, silicon carbide is considered to be the material of choice for power switching electronics in the future. Until 1997 the maximum thickness of commercially available epilayers serving as the drift region for power devices has been limited to 10--15 mum, limiting the maximum blocking voltage to 1500 V for vertical power devices in silicon carbide. In this study, we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV---more than twice what was previously reported for any SiC MOSFETs---but suffered from low MOS channel mobility caused by the high anneal temperatures (≥1600°C) required to activate the p-type ion-implant. Combining the high blocking-voltage of the vanadium-doped substrate with the higher MOS mobility previously achieved by an epitaxially-grown accumulation channel leads us to the LACCUFET device: No p-type implant is necessary. This device shows a blocking voltage of 2.7 kV unmatched by any SiC transistor until February 2000 combined with a much lower specific on-resistance of 3.6 O•cm2. The ability to combine long-channel test MOSFETs with high channel mobility of 27 cm2/(volt·sec) in 4H-SiC with power devices of 13 cm2/(volt·sec) on the same chip has been demonstrated. The Figure of Merit Vblock 2/Ron,sp for this new NON-RESURF LDMOSFET in 4H-SiC is close to the theoretical limit for vertical power devices made of silicon. The specific on-resistance can be reduced by factor 2.5 by forward-biasing the p-base to source junction by 2 to 3 volts. Basic operation in Static Induction Injection Accumulation FET (SIAFET) mode has been demonstrated. Lateral (Non-Punch-Through) Insulated Gate Bipolar Transistors (LIGBT) have been presented for the first time showing similar on-resistance and blocking voltages but significantly higher on-currents for both 4H and 6H-SiC devices compared to their MOSFET counterparts. Test p-i-n diodes show lower on-resistance by carrier injection into the drift region.

47 CFR 22.719 - Additional channel policy for rural radiotelephone stations.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 2 2013-10-01 2013-10-01 false Additional channel policy for rural radiotelephone stations. 22.719 Section 22.719 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.719 Additional channel...

47 CFR 22.719 - Additional channel policy for rural radiotelephone stations.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 2 2014-10-01 2014-10-01 false Additional channel policy for rural radiotelephone stations. 22.719 Section 22.719 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.719 Additional channel...

47 CFR 22.719 - Additional channel policy for rural radiotelephone stations.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 2 2011-10-01 2011-10-01 false Additional channel policy for rural radiotelephone stations. 22.719 Section 22.719 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.719 Additional channel...

The Design and Evaluation of a Computerized Adaptive Test on Mobile Devices

ERIC Educational Resources Information Center

Triantafillou, Evangelos; Georgiadou, Elissavet; Economides, Anastasios A.

2008-01-01

The use of computerized adaptive testing (CAT) has expanded rapidly over recent years mainly due to the advances in communication and information technology. Availability of advanced mobile technologies provides several benefits to e-learning by creating an additional channel of access with mobile devices such as PDAs and mobile phones. This paper…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webb, Ian K.; Garimella, Sandilya V. B.; Tolmachev, Aleksey V.

A Structures for Lossless Ion Manipulations (SLIM) module that allows ion mobility separations and the switching of ions between alternative drift paths is described. The SLIM switch component has a “Tee” configuration and allows switching of ions between a linear path and a 90-degree bend. By controlling switching times, ions can be deflected to an alternative channel as a function of their mobilities. In the initial evaluation the switch is used in a static mode and shown compatible with high performance ion mobility separations at 4 torr. In the “dynamic mode” we show that mobility-selected ions can be switched intomore » the alternative channel, and that various ion species can be independently selected based on their mobilities for time-of-flight mass spectrometer (TOF MS) IMS detection and mass analysis. Ultimately, this development also provides the basis for e.g. the selection of specific mobilities for storage and accumulation, and key modules for the assembly of SLIM devices enabling much more complex sequences of ion manipulations.« less

Enhancing the electron mobility of SrTiO3 with strain

NASA Astrophysics Data System (ADS)

Jalan, Bharat; Allen, S. James; Beltz, Glenn E.; Moetakef, Pouya; Stemmer, Susanne

2011-03-01

We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm2/V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.

76 FR 41522 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-14

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-771] In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components... certain mobile phones, mobile tablets, portable music players, and computers. 76 FR 24051 (Apr. 29, 2011...

Characterization and optimization of slanted well designs for microfluidic mixing under electroosmotic flow.

PubMed

Johnson, Timothy J; Locascio, Laurie E

2002-08-01

Recently, a series of slanted wells on the floor of a microfluidic channel were experimentally shown to successfully induce off-axis transport and mixing of two confluent streams when operating under electroosmotic (EO) flow. This paper will further explore, through numerical simulations, the parameters that affect off-axis transport under EO flow with an emphasis on optimizing the mixing rate of (a). two confluent streams in steady-state or (b). the transient scenario of two confluent plugs of material, which simulates mixing after an injection. For the steady-state scenario, the degree of mixing was determined to increase by changing any of the following parameters: (1). increasing the well depth, (2). decreasing the well angle relative to the axis of the channel, and (3). increasing the EO mobility of the well walls relative to the mobility of the main channel. Also, it will be shown that folding of the fluid can occur when the well angle is sufficiently reduced and/or when the EO mobility of the wells is increased relative to the channel. The optimum configuration for the transient problem of mixing two confluent plugs includes shallow wells to minimize the well residence time, and an increased EO mobility of the well walls relative to the main channel as well as small well angles to maximize off-axis transport. The final design reported here for the transient study reduces the standard deviation of the concentration across the channel by 72% while only increasing the axial dispersion of the injected plug by 8.6 % when compared to a plug injected into a channel with no wells present. These results indicate that a series of slanted wells on the wall of a microchannel provides a means for controlling and achieving a high degree of off-axis transport and mixing in a passive manner for micro total analysis system (microTAS) devices that are driven by electroosmosis.

Spin injection devices with high mobility 2DEG channels (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ciorga, Mariusz; Oltscher, Martin; Kuczmik, Thomas; Loher, Josef; Bayer, Andreas; Schuh, Dieter; Bougeard, Dominique; Weiss, Dieter

2016-10-01

Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of 20% measured in local configuration, i.e., with spin-polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)

Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1

NASA Astrophysics Data System (ADS)

Hamadani, B. H.; Gundlach, D. J.; McCulloch, I.; Heeney, M.

2007-12-01

We report on charge transport in organic field-effect transistors based on poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1cm2V-1s-1. This is achieved by employing Pt instead of the commonly used Au as the contacting electrode and allows for a significant reduction in the metal/polymer contact resistance. The mobility increases as a function of decreasing channel length, consistent with a Poole-Frenkel model of charge transport, and reaches record mobilities of 1cm2V-1s-1 or more at channel lengths on the order of few microns in an undoped solution-processed polymer cast on an oxide gate dielectric.

Understanding Local and Macroscopic Electron Mobilities in the Fullerene Network of Conjugated Polymer-based Solar Cells. Time-Resolved Microwave Conductivity and Theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguirre, Jordan C.; Arntsen, Christopher D.; Hernandez, Samuel

2013-09-23

The efficiency of bulk heterojunction (BHJ) organic photovoltaics is sensitive to the morphology of the fullerene network that transports electrons through the device. This sensitivity makes it difficult to distinguish the contrasting roles of local electron mobility (how easily electrons can transfer between neighboring fullerene molecules) and macroscopic electron mobility (how well-connected is the fullerene network on device length scales) in solar cell performance. In this work, a combination of density functional theory (DFT) calculations, flash-photolysis time-resolved microwave conductivity (TRMC) experiments, and space-charge-limit current (SCLC) mobility estimates are used to examine the roles of local and macroscopic electron mobility inmore » conjugated polymer/fullerene BHJ photovoltaics. The local mobility of different pentaaryl fullerene derivatives (so-called ‘shuttlecock’ molecules) is similar, so that differences in solar cell efficiency and SCLC mobilities result directly from the different propensities of these molecules to self-assemble on macroscopic length scales. These experiments and calculations also demonstrate that the local mobility of phenyl-C60 butyl methyl ester (PCBM) is an order of magnitude higher than that of other fullerene derivatives, explaining why PCBM has been the acceptor of choice for conjugated polymer BHJ devices even though it does not form an optimal macroscopic network. The DFT calculations indicate that PCBM's superior local mobility comes from the near-spherical nature of its molecular orbitals, which allow strong electronic coupling between adjacent molecules. In combination, DFT and TRMC techniques provide a tool for screening new fullerene derivatives for good local mobility when designing new molecules that can improve on the macroscopic electron mobility offered by PCBM.« less

Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics.

PubMed

Carey, Tian; Cacovich, Stefania; Divitini, Giorgio; Ren, Jiesheng; Mansouri, Aida; Kim, Jong M; Wang, Chaoxia; Ducati, Caterina; Sordan, Roman; Torrisi, Felice

2017-10-31

Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm 2  V -1  s -1 , at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.

47 CFR 22.715 - Technical channel assignment criteria for rural radiotelephone stations.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Technical channel assignment criteria for rural radiotelephone stations. 22.715 Section 22.715 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.715 Technical channel...

47 CFR 22.715 - Technical channel assignment criteria for rural radiotelephone stations.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 47 Telecommunication 2 2013-10-01 2013-10-01 false Technical channel assignment criteria for rural radiotelephone stations. 22.715 Section 22.715 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.715 Technical channel...

47 CFR 22.715 - Technical channel assignment criteria for rural radiotelephone stations.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 2 2011-10-01 2011-10-01 false Technical channel assignment criteria for rural radiotelephone stations. 22.715 Section 22.715 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.715 Technical channel...

47 CFR 22.715 - Technical channel assignment criteria for rural radiotelephone stations.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 47 Telecommunication 2 2014-10-01 2014-10-01 false Technical channel assignment criteria for rural radiotelephone stations. 22.715 Section 22.715 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES Rural Radiotelephone Service § 22.715 Technical channel...

Medical reliable network using concatenated channel codes through GSM network.

PubMed

Ahmed, Emtithal; Kohno, Ryuji

2013-01-01

Although the 4(th) generation (4G) of global mobile communication network, i.e. Long Term Evolution (LTE) coexisting with the 3(rd) generation (3G) has successfully started; the 2(nd) generation (2G), i.e. Global System for Mobile communication (GSM) still playing an important role in many developing countries. Without any other reliable network infrastructure, GSM can be applied for tele-monitoring applications, where high mobility and low cost are necessary. A core objective of this paper is to introduce the design of a more reliable and dependable Medical Network Channel Code system (MNCC) through GSM Network. MNCC design based on simple concatenated channel code, which is cascade of an inner code (GSM) and an extra outer code (Convolution Code) in order to protect medical data more robust against channel errors than other data using the existing GSM network. In this paper, the MNCC system will provide Bit Error Rate (BER) equivalent to the BER for medical tele monitoring of physiological signals, which is 10(-5) or less. The performance of the MNCC has been proven and investigated using computer simulations under different channels condition such as, Additive White Gaussian Noise (AWGN), Rayleigh noise and burst noise. Generally the MNCC system has been providing better performance as compared to GSM.

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stolyarov, Maxim A.; Liu, Guanxiong; Balandin, Alexander A., E-mail: balandin@ee.ucr.edu

2015-07-13

We have investigated low-frequency 1/f noise in the boron nitride–graphene–boron nitride heterostructure field-effect transistors on Si/SiO{sub 2} substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ∼30 000 to ∼36 000 cm{sup 2}/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ∼5 × 10{sup −9 }μm{sup 2 }Hz{sup −1}, which is a factor of ×5 – ×10 lower than that in non-encapsulated graphene devices on Si/SiO{sub 2}. The physicalmore » mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO{sub 2} gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.« less

A simple quantum mechanical treatment of scattering in nanoscale transistors

NASA Astrophysics Data System (ADS)

Venugopal, R.; Paulsson, M.; Goasguen, S.; Datta, S.; Lundstrom, M. S.

2003-05-01

We present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling dissipative electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors. The simulation scheme, which solves the nonequilibrium Green's function equations self consistently with Poisson's equation, treats the effect of scattering using a simple approximation inspired by the "Büttiker probes," often used in mesoscopic physics. It is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results are used to highlight quantum effects, discuss the physics of scattering and to relate the quantum mechanical quantities used in our model to experimentally measured low field mobilities. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This paper shows that our approximate treatment of scattering, is an efficient and useful simulation method for modeling electron transport in nanoscale, silicon-on-insulator transistors.

Bottom-up assembly of metallic germanium

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, Lareine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

2015-08-01

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Graphene/black phosphorus heterostructured photodetector

NASA Astrophysics Data System (ADS)

Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

2018-06-01

Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

PubMed Central

Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

2015-01-01

Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

2017-05-01

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G.

The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boostmore » the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.« less

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

PubMed

Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

2017-12-01

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

Controlling the mode of operation of organic transistors through side-chain engineering.

PubMed

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B; Bandiello, Enrico; Hanifi, David A; Sessolo, Michele; Malliaras, George G; McCulloch, Iain; Rivnay, Jonathan

2016-10-25

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

Controlling the mode of operation of organic transistors through side-chain engineering

PubMed Central

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B.; Bandiello, Enrico; Hanifi, David A.; Sessolo, Michele; Malliaras, George G.; McCulloch, Iain; Rivnay, Jonathan

2016-01-01

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors. PMID:27790983

Propagation model for the Land Mobile Satellite channel in urban environments

NASA Technical Reports Server (NTRS)

Sforza, M.; Dibernardo, G.; Cioni, R.

1993-01-01

This paper presents the major characteristics of a simulation package capable of performing a complete narrow and wideband analysis of the mobile satellite communication channel in urban environments for any given orbital configuration. The wavelength-to-average urban geometrical dimension ratio has required the use of the Geometrical Theory of Diffraction (GTD). For the RF frequency range, the model has been designed to be (1 up to 60 GHz) extended to include effects of non-perfect conductivity and surface roughness. Taking advantage of the inherent capabilities of such a high frequency method, we are able to provide a complete description of the electromagnetic field at the mobile terminal. Using the information made available at the ray-tracer and GTD solver outputs, the Land Mobile Satellite (LMS) urban model can also give a detailed description of the communication channel in terms of power delay profiles, Doppler spectra, channel scattering functions, and so forth. Statistical data, e.g. cumulative distribution functions, level crossing rates or distributions of fades are also provided. The user can access the simulation tool through a Design-CAD user-friendly interface by means of which she can effectively design her own urban layout and run consequently all the envisaged routines. The software is optimized in its execution time so that numerous runs can be achieved in a considerably short time.

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R. R.; Khare, Neeraj

2018-04-01

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi2Te3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi2Te3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi2Te3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Bin; Ma, Xiao-Hua, E-mail: xhma@xidian.edu.cn, E-mail: yhao@xidian.edu.cn; Chen, Wei-Wei

The parameters of open-gate structures treated with different etching time were monitored during the gate recess process, and their impacts on the threshold voltage (V{sub th}) of final fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based on open-gate structures were discussed in this paper. It is found that V{sub th} can exceed 0 V when channel resistance in the recessed region (R{sub on-open}) increases over ∼275 Ω mm, maximum current (I{sub Dmax}) decreases below ∼29 mA/mm, or recessed barrier thickness (t{sub RB}) is below ∼7.5 nm. In addition, t{sub RB} obtained by atomic force microscopy measurements and C-V measurements are also compared. Finally,more » theoretical common criteria based on the experimental results of this work for t{sub RB} and R{sub on-open} were established to evaluate the V{sub th} of a regular normally-off AlGaN/GaN HEMTs. The results indicate that these parameters of open-gate structure can be utilized to achieve normally-off HEMTs with controllable V{sub th}.« less

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics.

PubMed

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R R; Khare, Neeraj

2018-04-03

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi 2 Te 3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi 2 Te 3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi 2 Te 3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Channel-Dynamic Control on the Establishment of Riparian Trees After Large Floods in Northwestern California

Treesearch

Thomas E. Lisle

1989-01-01

Large floods in northwestern California in the past two decades have mobilized extensive areas of valley floors, removed streamside trees, and widened channels. Channel cross sections were surveyed to illustrate an hypothesis on the linkage between sediment transport, colonization of channel margins by trees, and streambank recovery. Riparian trees, e.g., white alder...

76 FR 18247 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-01

... Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers... importation of certain electronic devices, including mobile phones, mobile tablets, portable music players...

Effectiveness of mobile electronic devices in weight loss among overweight and obese populations: a systematic review and meta-analysis.

PubMed

Khokhar, Bushra; Jones, Jessica; Ronksley, Paul E; Armstrong, Marni J; Caird, Jeff; Rabi, Doreen

2014-01-01

Mobile electronic devices, such as mobile phones and PDAs, have emerged as potentially useful tools in the facilitation and maintenance of weight loss. While RCTs have demonstrated a positive impact of mobile interventions, the extent to which mobile electronic devices are more effective than usual care methods is still being debated. Electronic databases were systematically searched for RCTs evaluating the effectiveness of mobile electronic device interventions among overweight and obese adults. Weighted mean difference for change in body weight was the primary outcome. The search strategy yielded 559 citations and of the 108 potentially relevant studies, six met the criteria. A total of 632 participants were included in the six studies reporting a mean change in body weight. Using a random-effects model, the WMD for the effect of using mobile electronic devices on reduction in body weight was -1.09 kg (95% CI -2.12, -0.05). When stratified by the type of mobile electronic device used, it suggests that interventions using mobile phones were effective at achieving weight loss, WMD = -1.78 kg (95% CI -2.92, -0.63). This systematic review and meta-analysis suggests that mobile electronic devices have the potential to facilitate weight loss in overweight and obese populations, but further work is needed to understand if these interventions have sustained benefit and how we can make these mHealth tools most effective on a large scale. As the field of healthcare increasingly utilizes novel mobile technologies, the focus must not be on any one specific device but on the best possible use of these tools to measure and understand behavior. As mobile electronic devices continue to increase in popularity and the associated technology continues to advance, the potential for the use of mobile devices in global healthcare is enormous. More RCTs with larger sample sizes need to be conducted to look at the cost-effectiveness, technical and financial feasibility of adapting such mHealth interventions in a real clinical setting.

Conception and characterization of a virtual coplanar grid for a 11×11 pixelated CZT detector

NASA Astrophysics Data System (ADS)

Espagnet, Romain; Frezza, Andrea; Martin, Jean-Pierre; Hamel, Louis-André; Després, Philippe

2017-07-01

Due to the low mobility of holes in CZT, commercially available detectors with a relatively large volume typically use a pixelated anode structure. They are mostly used in imaging applications and often require a dense electronic readout scheme. These large volume detectors are also interesting for high-sensitivity applications and a CZT-based blood gamma counter was developed from a 20×20×15 mm3 crystal available commercially and having a 11×11 pixelated readout scheme. A method is proposed here to reduce the number of channels required to use the crystal in a high-sensitivity counting application, dedicated to pharmacokinetic modelling in PET and SPECT. Inspired by a classic coplanar anode, an implementation of a virtual coplanar grid was done by connecting the 121 pixels of the detector to form intercalated bands. The layout, the front-end electronics and the characterization of the detector in this 2-channel anode geometry is presented. The coefficients required to compensate for electron trapping in CZT were determined experimentally to improve the performance. The resulting virtual coplanar detector has an intrinsic efficiency of 34% and an energy resolution of 8% at 662 keV. The detector's response was linear between 80 keV and 1372 keV. This suggests that large CZT crystals offer an excellent alternative to scintillation detectors for some applications, especially those where high-sensitivity and compactness are required.

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

NASA Astrophysics Data System (ADS)

Ren, F.; Hwang, Y.-H.; Pearton, S. J.; Patrick, Erin; Law, Mark E.

2015-03-01

Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.

A system for automated noise parameter measurements on MR preamplifiers and application to high B(0) fields.

PubMed

Lagore, Russell L; Roberts, Brodi Roduta; Possanzini, Cecilia; Saylor, Charles; Fallone, B Gino; De Zanche, Nicola

2014-08-01

A noise figure and noise parameter measurement system was developed that consists of a combination spectrum and network analyzer, preamplifier, programmable power supply, noise source, tuning board, and desktop computer. The system uses the Y-factor method for noise figure calculation and allows calibrations to correct for a decrease in excess noise ratio between the noise source and device under test, second stage (system) noise, ambient temperature variations, and available gain of the device under test. Noise parameters are extracted by performing noise figure measurements at several source impedance values obtained by adjusting an electronically controlled tuner. Results for several amplifiers at 128 MHz and 200 MHz agree with independent measurements and with the corresponding datasheets. With some modifications, the system was also used to characterize the noise figure of MRI preamplifiers in strong static magnetic fields up to 9.4 T. In most amplifiers tested the gain was found to be reduced by the magnetic field, while the noise figure increased. These changes are detrimental to signal quality (SNR) and are dependent on the electron mobility and design of the amplifier's semiconductor devices. Consequently, gallium arsenide (GaAs) field-effect transistors are most sensitive to magnetic fields due to their high electron mobility and long, narrow channel, while silicon-germanium (SiGe) bipolar transistor amplifiers are largely immune due to their very thin base. Copyright © 2014 John Wiley & Sons, Ltd.