Joint Services Electronics Program.

DTIC Science & Technology

1984-06-01

INTEGRATION •6 1.1 Properties of Materials: Application of Channeling Radiation to a Study of the Properties 6 of Materials 1.1.1 Scientific...Objectives 6 1.1.2 Progress 7 1.1.2.1 Channeling Radiation from Si with an Oxygen Platelet Impurity 7 1.1.2.2 Calculated Potentials and Eigenvalues in GaAs...AIGaAs, and AlAs 11 1.1.2.3 Low Temperature Channeling Radiation 14 1.1.2.4 Electron Channeling Radiation from LiH and UD 14 1.1.2.5 12.6 MeV Electron

Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

NASA Astrophysics Data System (ADS)

Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

2015-09-01

We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. Electronic supplementary information (ESI) available: Optimization of a PMMA-mediated wet transfer method of graphene, transfer characteristics of all the channels, raw data of drain-source current measured by sweeping a backgate voltage and an AFM topography image and cross-sectional profiles of Fig. 4 and the corresponding electrical measurement along with an estimation of carbon diffusion coefficient. See DOI: 10.1039/c5nr04063a

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

NASA Technical Reports Server (NTRS)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Electron energy balance and ionization in the channel of a stationary plasma thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselovzorov, A. N., E-mail: Veselovzorov-AN@nrcki.ru; Pogorelov, A. A.; Svirskiy, E. B.

2016-03-15

The paper presents results of numerical simulations of the electron dynamics in the field of the azimuthal and longitudinal waves excited in the channel of a stationary plasma thruster (SPT). The simulations are based on the experimentally determined wave characteristics. The simulation results show that the azimuthal wave displayed as ionization instability enhances electron transport along the thruster channel. It is established that the electron transport rate in the azimuthal wave increases as compared to the rate of diffusion caused by electron scattering from neutral atoms in proportion to the ratio between the times of electron− neutral collisions responsible formore » ionization and elastic electron scattering, respectively. An expression governing the plasma conductivity is derived with allowance for electron interaction with the azimuthal wave. The Hall parameter, the electron component of the discharge current, and the electron heating power in the thruster channel are calculated for two model SPTs operating with krypton and xenon. The simulation results agree well with the results of experimental studies of these two SPTs.« less

Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene.

PubMed

Wei, Di S; van der Sar, Toeno; Sanchez-Yamagishi, Javier D; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo; Halperin, Bertrand I; Yacoby, Amir

2017-08-01

Confined to a two-dimensional plane, electrons in a strong magnetic field travel along the edge in one-dimensional quantum Hall channels that are protected against backscattering. These channels can be used as solid-state analogs of monochromatic beams of light, providing a unique platform for studying electron interference. Electron interferometry is regarded as one of the most promising routes for studying fractional and non-Abelian statistics and quantum entanglement via two-particle interference. However, creating an edge-channel interferometer in which electron-electron interactions play an important role requires a clean system and long phase coherence lengths. We realize electronic Mach-Zehnder interferometers with record visibilities of up to 98% using spin- and valley-polarized edge channels that copropagate along a pn junction in graphene. We find that interchannel scattering between same-spin edge channels along the physical graphene edge can be used to form beamsplitters, whereas the absence of interchannel scattering along gate-defined interfaces can be used to form isolated interferometer arms. Surprisingly, our interferometer is robust to dephasing effects at energies an order of magnitude larger than those observed in pioneering experiments on GaAs/AlGaAs quantum wells. Our results shed light on the nature of edge-channel equilibration and open up new possibilities for studying exotic electron statistics and quantum phenomena.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Electrical spin injection and detection in molybdenum disulfide multilayer channel

PubMed Central

Liang, Shiheng; Yang, Huaiwen; Renucci, Pierre; Tao, Bingshan; Laczkowski, Piotr; Mc-Murtry, Stefan; Wang, Gang; Marie, Xavier; George, Jean-Marie; Petit-Watelot, Sébastien; Djeffal, Abdelhak; Mangin, Stéphane; Jaffrès, Henri; Lu, Yuan

2017-01-01

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. PMID:28387252

Transmission electron microscope cells for use with liquid samples

DOEpatents

Khalid, Waqas; Alivisatos, Paul A.; Zettl, Alexander K.

2016-08-09

This disclosure provides systems, methods, and devices related to transmission electron microscopy cells for use with liquids. In one aspect a device includes a substrate, a first graphene layer, and a second graphene layer. The substrate has a first surface and a second surface. The first surface defines a first channel, a second channel, and an outlet channel. The first channel and the second channel are joined to the outlet channel. The outlet channel defines a viewport region forming a though hole in the substrate. The first graphene layer overlays the first surface of the substrate, including an interior area of the first channel, the second channel, and the outlet channel. The second graphene layer overlays the first surface of the substrate, including open regions defined by the first channel, the second channel, and the outlet channel.

Control of ITBs in Fusion Self-Heated Plasmas

NASA Astrophysics Data System (ADS)

Panta, Soma; Newman, David; Terry, Paul; Sanchez, Raul

2015-11-01

Simple dynamical models have been able to capture a remarkable amount of the dynamics of the transport barriers found in many devices, including the often disconnected nature of the electron thermal transport channel sometimes observed in the presence of a standard (``ion channel'') barrier. By including in this rich though simple dynamic transport model an evolution equation for electron fluctuations we have previously investigated the interaction between the formation of the standard ion channel barrier and the somewhat less common electron channel barrier. The electron channel formation and evolution is even more sensitive to the alignment of the various gradients making up the sheared radial electric field then the ion barrier is. Because of this sensitivity and coupling of the barrier dynamics, the dynamic evolution of the fusion self-heating profile can have a significant impact on the barrier location and dynamics. To investigate this, self-heating has been added this model and the impact of the self-heating on the formation and controllability of the various barriers is explored. It has been found that the evolution of the heating profiles can suppress or collapse the electron channel barrier. NBI and RF schemes will be investigated for profile/barrier control.

Electron-proton spectrometer design summary

NASA Technical Reports Server (NTRS)

1972-01-01

The electron-proton spectrometer (EPS) will be placed aboard the Skylab in order to provide data from which electron and proton radiation dose can be determined. The EPS has five sensors, each consisting of a shielded silicon detector. These provide four integral electron channels and five integral proton channels from which can be deduced four differential proton increments.

A Mathematica package for calculation of planar channeling radiation spectra of relativistic electrons channeled in a diamond-structure single crystal (quantum approach)

NASA Astrophysics Data System (ADS)

Azadegan, B.

2013-03-01

The presented Mathematica code is an efficient tool for simulation of planar channeling radiation spectra of relativistic electrons channeled along major crystallographic planes of a diamond-structure single crystal. The program is based on the quantum theory of channeling radiation which has been successfully applied to study planar channeling at electron energies between 10 and 100 MeV. Continuum potentials for different planes of diamond, silicon and germanium single crystals are calculated using the Doyle-Turner approximation to the atomic scattering factor and taking thermal vibrations of the crystal atoms into account. Numerical methods are applied to solve the one-dimensional Schrödinger equation. The code is designed to calculate the electron wave functions, transverse electron states in the planar continuum potential, transition energies, line widths of channeling radiation and depth dependencies of the population of quantum states. Finally the spectral distribution of spontaneously emitted channeling radiation is obtained. The simulation of radiation spectra considerably facilitates the interpretation of experimental data. Catalog identifier: AEOH_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEOH_v1_0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 446 No. of bytes in distributed program, including test data, etc.: 209805 Distribution format: tar.gz Programming language: Mathematica. Computer: Platforms on which Mathematica is available. Operating system: Operating systems on which Mathematica is available. RAM: 1 MB Classification: 7.10. Nature of problem: Planar channeling radiation is emitted by relativistic charged particles during traversing a single crystal in direction parallel to a crystallographic plane. Channeling is modeled as the motion of charged particles in a continuous planar potential which is formed by the spatially and thermally averaged action of the individual electrostatic potentials of the crystal atoms of the corresponding plane. Classically, the motion of channeled particles through the crystal resembles transverse oscillations being the source of radiation emission. For electrons of energy less than 100 MeV considered here, planar channeling has to be treated quantum mechanically by a one-dimensional Schrödinger equation for the transverse motion. Hence, this motion of the channeled electrons is restricted to a number of discrete (bound) channeling states in the planar continuum potential, and the emission of channeling radiation is caused by spontaneous electron transitions between these eigenstates. Due to relativistic and Doppler effects, the energy of the emitted photons directed into a narrow forward cone is typically shifted up by about three to five orders of magnitude. Consequently, the observed energy spectrum of channeling radiation is characterized by a number of radiation lines in the energy domain of hard X-rays. Channeling radiation may, therefore, be applied as an intense, tunable, quasi-monochromatic X-ray source. Solution method: The problem consists in finding the electron wave function for the planar continuum potential. Both the wave functions and corresponding energies of channeling states solve the Schrödinger equation of transverse electron motion. In the framework of the so-called many-beam formalism, solving the Schrödinger equation reduces to a eigenvector-eigenvalue problem of a Hermitian matrix. For that the program employs the mathematical tools allocated in the commercial computation software Mathematica. The electric field of the atomic planes in the crystal forces dipole oscillations of the channeled charged particles. In the quantum mechanical approach, the dipole approximation is also valid for spontaneous transitions between bound states. The transition strength for dedicated states depends on the magnitude of the corresponding dipole matrix element. The photon energy correlates with the particle energy, and the spectral width of radiation lines is a function of the life times of the channeling states. Running time: The program has been tested on a PC AMD Athlon X2 245 processor 2.9 GHz with 2 GB RAM. Depending on electron energy and crystal thickness, the running time of the program amounts to 5-10 min.

Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by the probe-electron-beam-induced current technique.

PubMed

Watanabe, Kentaro; Nokuo, Takeshi; Chen, Jun; Sekiguchi, Takashi

2014-04-01

We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al(0.48)In(0.52)As/i-Ga(0.30)In(0.70)As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, J.; Chen, M.; Wu, W. Y.

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors, while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize simultaneous coupling of the electron beam and the laser pulse into a second stage. Furthermore, a curved channel with transition segment is used to guide a fresh laser pulse into a subsequent straight channel, while allowing the electrons to propagate in a straight channel. This scheme then benefitsmore » from a shorter coupling distance and continuous guiding of the electrons in plasma, while suppressing transverse beam dispersion. Within moderate laser parameters, particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration, while maintaining high capture efficiency, stability, and beam quality.« less

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channel

DOE PAGES

Luo, J.; Chen, M.; Wu, W. Y.; ...

2018-04-10

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors, while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize simultaneous coupling of the electron beam and the laser pulse into a second stage. Furthermore, a curved channel with transition segment is used to guide a fresh laser pulse into a subsequent straight channel, while allowing the electrons to propagate in a straight channel. This scheme then benefitsmore » from a shorter coupling distance and continuous guiding of the electrons in plasma, while suppressing transverse beam dispersion. Within moderate laser parameters, particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration, while maintaining high capture efficiency, stability, and beam quality.« less

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pratap, Surender; Sarkar, Niladri, E-mail: niladri@pilani.bits-pilani.ac.in

Self-Consistent Quantum Method using Schrodinger-Poisson equations have been used for determining the Channel electron density of Nano-Scale MOSFETs for 6nm and 9nm thick channels. The 6nm thick MOSFET show the peak of the electron density at the middle where as the 9nm thick MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained from the diagonal elements of the density matrix; [ρ]=[1/(1+exp(β(H − μ)))] A Tridiagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 1D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used formore » constructing the matrix equation. The comparison of these results which are obtained by Quantum methods are done with Semi-Classical methods.« less

Study of the transport parameters of cloud lightning plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Z. S.; Yuan, P.; Zhao, N.

2010-11-15

Three spectra of cloud lightning have been acquired in Tibet (China) using a slitless grating spectrograph. The electrical conductivity, the electron thermal conductivity, and the electron thermal diffusivity of the cloud lightning, for the first time, are calculated by applying the transport theory of air plasma. In addition, we investigate the change behaviors of parameters (the temperature, the electron density, the electrical conductivity, the electron thermal conductivity, and the electron thermal diffusivity) in one of the cloud lightning channels. The result shows that these parameters decrease slightly along developing direction of the cloud lightning channel. Moreover, they represent similar suddenmore » change behavior in tortuous positions and the branch of the cloud lightning channel.« less

Kondo effect in the seven-orbital Anderson model hybridized with Γ8 conduction electrons

NASA Astrophysics Data System (ADS)

Hotta, Takashi

2018-05-01

We clarify the two-channel Kondo effect in the seven-orbital Anderson model hybridized with Γ8 conduction electrons by employing a numerical renormalization group method. From the numerical analysis for the case with two local f electrons, corresponding to Pr3+ or U4+ ion, we confirm that a residual entropy of 0.5 log 2 , a characteristic of two-channel Kondo phenomena, appears for the local Γ3 non-Kramers doublet state. For further understanding on the Γ3 state, the effective model is constructed on the basis of a j-j coupling scheme. Then, we rediscover the two-channel s-d model concerning quadrupole degrees of freedom. Finally, we briefly introduce our recent result on the two-channel Kondo effect for the case with three local f electrons.

Photoexcitation and ionization in carbon dioxide - Theoretical studies in the separated-channel static-exchange approximation

NASA Technical Reports Server (NTRS)

Padial, N.; Csanak, G.; Mckoy, B. V.; Langhoff, P. W.

1981-01-01

Vertical-electronic static-exchange photoexcitation and ionization cross sections are reported which provide a first approximation to the complete dipole spectrum of CO2. Separated-channel static-exchange calculations of vertical-electronic transition energies and oscillator strengths, and Stieltjes-Chebyshev moment methods were used in the development. Detailed comparisons were made of the static-exchange excitation and ionization spectra with photoabsorption, electron-impact excitation, and quantum-defect estimates of discrete transition energies and intensities, and with partial-channel photoionization cross sections obtained from fluorescence measurements and from tunable-source and (e, 2e) photoelectron spectroscopy. Results show that the separate-channel static-exchange approximation is generally satisfactory in CO2.

Deformation localization and dislocation channel dynamics in neutron-irradiated austenitic stainless steels

DOE PAGES

Gussev, Maxim N.; Field, Kevin G.; Busby, Jeremy T.

2015-02-24

We investigated dynamics of deformation localization and dislocation channel formation in situ in a neutron irradiated AISI 304 austenitic stainless steel and a model 304-based austenitic alloy by combining several analytical techniques including optic microscopy and laser confocal microscopy, scanning electron microscopy, electron backscatter diffraction and transmission electron microscopy. Channel formation was observed at 70% of the formal tensile yield stress for both alloys. It was shown that triple junction points do not always serve as a source of dislocation channels; at stress levels below the yield stress, channels often formed near the middle of the grain boundary. For amore » single grain, the role of elastic stiffness value (Young modulus) in the channel formation was analyzed; it was shown that in the irradiated 304 steels the initial channels appeared in soft grains with a high Schmid factor located near stiff grains with high elastic stiffness. Moreover, the spatial organization of channels in a single grain was analyzed; it was shown that secondary channels operating in the same slip plane as primary channels often appeared at the middle or at one third of the way between primary channels. The twinning nature of dislocation channels was analyzed for grains of different orientation using TEM. Finally, it was shown that in the AISI 304 steel, channels were twin-free in grains oriented close to [001] and [101] of standard unit triangle; [111]-grains and grains oriented close to Schmid factor maximum contained deformation twins.« less

E-beam ionized channel guiding of an intense relativistic electron beam

DOEpatents

Frost, Charles A.; Godfrey, Brendon B.; Kiekel, Paul D.; Shope, Steven L.

1988-01-01

An IREB is guided through a curved path by ionizing a channel in a gas with electrons from a filament, and confining the electrons to the center of the path with a magnetic field extending along the path. The magnetic field is preferably generated by a solenoid extending along the path.

Two-Channel Kondo Effect in a Modified Single Electron Transistor

NASA Astrophysics Data System (ADS)

Oreg, Yuval; Goldhaber-Gordon, David

2003-04-01

We suggest a simple system of two electron droplets which should display two-channel Kondo behavior at experimentally accessible temperatures. Stabilization of the two-channel Kondo fixed point requires fine control of the electrochemical potential in each droplet, which can be achieved by adjusting voltages on nearby gate electrodes. We study the conditions for obtaining this type of two-channel Kondo behavior, discuss the experimentally observable consequences, and explore the gener­alization to the multichannel Kondo case.

Three-dimensional particle-in-cell simulation on gain saturation effect of microchannel plate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qiangqiang; Yuan, Zheng; Cao, Zhurong, E-mail: cao33jin@aliyun.com

We present here the results of the simulation work, using the three-dimensional particle-in-cell method, on the performance of the lead glass microchannel plate under saturated state. We calculated the electron cascade process with different DC bias voltages under both self-consistent condition and non-self-consistent condition. The comparative results have demonstrated that the strong self-consistent field can suppress the cascade process and make the microchannel plate saturated. The simulation results were also compared to the experimental data and good agreement was obtained. The simulation results also show that the electron multiplication process in the channel is accompanied by the buildup process ofmore » positive charges in the channel wall. Though the interactions among the secondary electron cloud in the channel, the positive charges in the channel wall, and the external acceleration field can make the electron-surface collision more frequent, the collision energy will be inevitably reduced, thus the electron gain will also be reduced.« less

The Experimental Study of Novel Pseudospark Hollow Cathode Plasma Electron Gun

NASA Astrophysics Data System (ADS)

Gu, Xiaowei; Meng, Lin; Sun, Yiqin; Yu, Xinhua

2008-11-01

The high-power microwave devices with plasma-filled have unique properties. One of the major problems associated with plasma-filled microwave sources is that ions from the plasma drift toward the gun regions of the tube. This bombardment is particularly dangerous for the gun, where high-energy ion impacts can damage the cathode surface and degrade its electron emission capabilities. One of the techniques investigated to mitigate this issue is to replace the material cathode with plasma cathode. Now, we study the novel electron gun (E-gun) that can be suitable for high power microwave device applications, adopting two forms of discharge channel, 1: a single hole channel, the structure can produce a solid electron beam; 2: porous holes channel, the structure can generate multiple electronic injection which is similar to the annular electron beam.

X-ray Synchrotron Radiation in a Plasma Wiggler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shuoquin; /UCLA /SLAC, SSRL

2005-09-27

A relativistic electron beam can radiate due to its betatron motion inside an ion channel. The ion channel is induced by the electron bunch as it propagates through an underdense plasma. In the theory section of this thesis the formation of the ion channel, the trajectories of beam electrons inside the ion channel, the radiation power and the radiation spectrum of the spontaneous emission are studied. The comparison between different plasma wiggler schemes is made. The difficulties in realizing stimulated emission as the beam traverses the ion channel are investigated, with particular emphasis on the bunching mechanism, which is importantmore » for the ion channel free electron laser. This thesis reports an experiment conducted at the Stanford Linear Accelerator Center (SLAC) to measure the betatron X-ray radiations for the first time. They first describe the construction and characterization of the lithium plasma source. In the experiment, the transverse oscillations of the SLAC 28.5 GeV electron beam traversing through a 1.4 meter long lithium plasma source are clearly seen. These oscillations lead to a quadratic density dependence of the spontaneously emitted betatron X-ray radiation. The divergence angle of the X-ray radiation is measured. The absolute photon yield and the spectral brightness at 14.2 KeV photon energy are estimated and seen to be in reasonable agreement with theory.« less

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.

Electron energy distribution function in a low-power Hall thruster discharge and near-field plume

NASA Astrophysics Data System (ADS)

Tichý, M.; Pétin, A.; Kudrna, P.; Horký, M.; Mazouffre, S.

2018-06-01

Electron temperature and plasma density, as well as the electron energy distribution function (EEDF), have been obtained inside and outside the dielectric channel of a 200 W permanent magnet Hall thruster. Measurements were carried out by means of a cylindrical Langmuir probe mounted onto a compact fast moving translation stage. The 3D particle-in cell numerical simulations complement experiments. The model accounts for the crossed electric and magnetic field configuration in a weakly collisional regime where only electrons are magnetized. Since only the electron dynamics is of interest in this study, an artificial mass of ions corresponding to mi = 30 000me was used to ensure ions could be assumed at rest. The simulation domain is located at the thruster exit plane and does not include the cathode. The measured EEDF evidences a high-energy electron population that is superimposed onto the low energy bulk population outside the channel. Inside the channel, the EEDF is close to Maxwellian. Both the experimental and numerical EEDF depart from an equilibrium distribution at the channel exit plane, a region of high magnetic field. We therefore conclude that the fast electron group found in the experiment corresponds to the electrons emitted by the external cathode that reach the thruster discharge without experiencing collision events.

E-beam ionized channel guiding of an intense relativistic electron beam

DOEpatents

Frost, C.A.; Godfrey, B.B.; Kiekel, P.D.; Shope, S.L.

1988-05-10

An IREB is guided through a curved path by ionizing a channel in a gas with electrons from a filament, and confining the electrons to the center of the path with a magnetic field extending along the path. The magnetic field is preferably generated by a solenoid extending along the path. 2 figs.

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Wang, Chun-Chi

2018-04-01

To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

Green Lightning Channels From the Chaiten Volcano in Chile Photographed By Carlos Gutierrez May 2-3, 2008

NASA Astrophysics Data System (ADS)

Few, A. A.

2013-12-01

The two photographs containing the green lightning channels appeared on the Boston.com web site (The Big Picture, June 4, 2008). These web photographs were of limited resolution (176 Kb) making the interpretation of the green channels difficult. The agent for Gutierrez, Landov LLC, made available the two photographs as high resolution digital photographs (1.4 Mb and 1.5 Mb) that appear on the poster. Upon close examination of the green channels it is possible to exclude negative discharges or their remnants as being the source of the green channels; negative discharges require white-hot ionization processes at the leading tip of the channel. There are several examples of the white negative channels on the photographs. The green channels might be positive streamers. In thunderstorms positive streamers propagate within the negative charged region of the cloud collecting electrons, which are supplied to the connected negative discharge channel, hence they are not observed in thunderstorms. They can be detected and mapped inside the thunderstorm from observations of their electromagnetic radiations. Positive streamers are cooler than negative discharges because electrons are convergent on the leading tip of the positive streamer maintaining its conductivity. For the negative leading tips the electrons are divergent and new electrons must be generated by hot ionization processes. A close examination reveals that the green channels track the edge of the ash cloud, which if a positive streamer would indicate a negative surface charge on the cloud. Most likely the green color results from excited oxygen atoms returning to the ground state and emitting a green photon. This is the process that produces the green aurora, and if this produces green lightning, it places several constraints on the conditions of the channel. The two photographs below are selected clips from the much larger photographs; these show the green lightning channels.

Probing the effect of electron channelling on atomic resolution energy dispersive X-ray quantification.

PubMed

MacArthur, Katherine E; Brown, Hamish G; Findlay, Scott D; Allen, Leslie J

2017-11-01

Advances in microscope stability, aberration correction and detector design now make it readily possible to achieve atomic resolution energy dispersive X-ray mapping for dose resilient samples. These maps show impressive atomic-scale qualitative detail as to where the elements reside within a given sample. Unfortunately, while electron channelling is exploited to provide atomic resolution data, this very process makes the images rather more complex to interpret quantitatively than if no electron channelling occurred. Here we propose small sample tilt as a means for suppressing channelling and improving quantification of composition, whilst maintaining atomic-scale resolution. Only by knowing composition and thickness of the sample is it possible to determine the atomic configuration within each column. The effects of neighbouring atomic columns with differing composition and of residual channelling on our ability to extract exact column-by-column composition are also discussed. Copyright © 2017 Elsevier B.V. All rights reserved.

A front-end readout Detector Board for the OpenPET electronics system

NASA Astrophysics Data System (ADS)

Choong, W.-S.; Abu-Nimeh, F.; Moses, W. W.; Peng, Q.; Vu, C. Q.; Wu, J.-Y.

2015-08-01

We present a 16-channel front-end readout board for the OpenPET electronics system. A major task in developing a nuclear medical imaging system, such as a positron emission computed tomograph (PET) or a single-photon emission computed tomograph (SPECT), is the electronics system. While there are a wide variety of detector and camera design concepts, the relatively simple nature of the acquired data allows for a common set of electronics requirements that can be met by a flexible, scalable, and high-performance OpenPET electronics system. The analog signals from the different types of detectors used in medical imaging share similar characteristics, which allows for a common analog signal processing. The OpenPET electronics processes the analog signals with Detector Boards. Here we report on the development of a 16-channel Detector Board. Each signal is digitized by a continuously sampled analog-to-digital converter (ADC), which is processed by a field programmable gate array (FPGA) to extract pulse height information. A leading edge discriminator creates a timing edge that is ``time stamped'' by a time-to-digital converter (TDC) implemented inside the FPGA . This digital information from each channel is sent to an FPGA that services 16 analog channels, and then information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc.

A front-end readout Detector Board for the OpenPET electronics system

DOE PAGES

Choong, W. -S.; Abu-Nimeh, F.; Moses, W. W.; ...

2015-08-12

Here, we present a 16-channel front-end readout board for the OpenPET electronics system. A major task in developing a nuclear medical imaging system, such as a positron emission computed tomograph (PET) or a single-photon emission computed tomograph (SPECT), is the electronics system. While there are a wide variety of detector and camera design concepts, the relatively simple nature of the acquired data allows for a common set of electronics requirements that can be met by a flexible, scalable, and high-performance OpenPET electronics system. The analog signals from the different types of detectors used in medical imaging share similar characteristics, whichmore » allows for a common analog signal processing. The OpenPET electronics processes the analog signals with Detector Boards. Here we report on the development of a 16-channel Detector Board. Each signal is digitized by a continuously sampled analog-to-digital converter (ADC), which is processed by a field programmable gate array (FPGA) to extract pulse height information. A leading edge discriminator creates a timing edge that is "time stamped" by a time-to-digital converter (TDC) implemented inside the FPGA. In conclusion, this digital information from each channel is sent to an FPGA that services 16 analog channels, and then information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc.« less

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channels.

PubMed

Luo, J; Chen, M; Wu, W Y; Weng, S M; Sheng, Z M; Schroeder, C B; Jaroszynski, D A; Esarey, E; Leemans, W P; Mori, W B; Zhang, J

2018-04-13

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV-level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize the simultaneous coupling of the electron beam and the laser pulse into a second stage. A partly curved channel, integrating a straight acceleration stage with a curved transition segment, is used to guide a fresh laser pulse into a subsequent straight channel, while the electrons continue straight. This scheme benefits from a shorter coupling distance and continuous guiding of the electrons in plasma while suppressing transverse beam dispersion. Particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration while maintaining high capture efficiency, stability, and beam quality.

Multistage Coupling of Laser-Wakefield Accelerators with Curved Plasma Channels

NASA Astrophysics Data System (ADS)

Luo, J.; Chen, M.; Wu, W. Y.; Weng, S. M.; Sheng, Z. M.; Schroeder, C. B.; Jaroszynski, D. A.; Esarey, E.; Leemans, W. P.; Mori, W. B.; Zhang, J.

2018-04-01

Multistage coupling of laser-wakefield accelerators is essential to overcome laser energy depletion for high-energy applications such as TeV-level electron-positron colliders. Current staging schemes feed subsequent laser pulses into stages using plasma mirrors while controlling electron beam focusing with plasma lenses. Here a more compact and efficient scheme is proposed to realize the simultaneous coupling of the electron beam and the laser pulse into a second stage. A partly curved channel, integrating a straight acceleration stage with a curved transition segment, is used to guide a fresh laser pulse into a subsequent straight channel, while the electrons continue straight. This scheme benefits from a shorter coupling distance and continuous guiding of the electrons in plasma while suppressing transverse beam dispersion. Particle-in-cell simulations demonstrate that the electron beam from a previous stage can be efficiently injected into a subsequent stage for further acceleration while maintaining high capture efficiency, stability, and beam quality.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choong, W. -S.; Abu-Nimeh, F.; Moses, W. W.

Here, we present a 16-channel front-end readout board for the OpenPET electronics system. A major task in developing a nuclear medical imaging system, such as a positron emission computed tomograph (PET) or a single-photon emission computed tomograph (SPECT), is the electronics system. While there are a wide variety of detector and camera design concepts, the relatively simple nature of the acquired data allows for a common set of electronics requirements that can be met by a flexible, scalable, and high-performance OpenPET electronics system. The analog signals from the different types of detectors used in medical imaging share similar characteristics, whichmore » allows for a common analog signal processing. The OpenPET electronics processes the analog signals with Detector Boards. Here we report on the development of a 16-channel Detector Board. Each signal is digitized by a continuously sampled analog-to-digital converter (ADC), which is processed by a field programmable gate array (FPGA) to extract pulse height information. A leading edge discriminator creates a timing edge that is "time stamped" by a time-to-digital converter (TDC) implemented inside the FPGA. In conclusion, this digital information from each channel is sent to an FPGA that services 16 analog channels, and then information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc.« less

Simplifying Electron Beam Channeling in Scanning Transmission Electron Microscopy (STEM).

PubMed

Wu, Ryan J; Mittal, Anudha; Odlyzko, Michael L; Mkhoyan, K Andre

2017-08-01

Sub-angstrom scanning transmission electron microscopy (STEM) allows quantitative column-by-column analysis of crystalline specimens via annular dark-field images. The intensity of electrons scattered from a particular location in an atomic column depends on the intensity of the electron probe at that location. Electron beam channeling causes oscillations in the STEM probe intensity during specimen propagation, which leads to differences in the beam intensity incident at different depths. Understanding the parameters that control this complex behavior is critical for interpreting experimental STEM results. In this work, theoretical analysis of the STEM probe intensity reveals that intensity oscillations during specimen propagation are regulated by changes in the beam's angular distribution. Three distinct regimes of channeling behavior are observed: the high-atomic-number (Z) regime, in which atomic scattering leads to significant angular redistribution of the beam; the low-Z regime, in which the probe's initial angular distribution controls intensity oscillations; and the intermediate-Z regime, in which the behavior is mixed. These contrasting regimes are shown to exist for a wide range of probe parameters. These results provide a new understanding of the occurrence and consequences of channeling phenomena and conditions under which their influence is strengthened or weakened by characteristics of the electron probe and sample.

Magnetospheric Convection Electric Field Dynamics and Stormtime Particle Energization: Case Study of the Magnetic Storm of May 4,1998

NASA Technical Reports Server (NTRS)

Khazanov, George V.; Liemohn, Michael W.; Newman, Tim S.; Fok, Mei-Ching; Ridley, Aaron

2003-01-01

It is shown that narrow channels of high electric field are an effective mechanism for injecting plasma into the inner magnetosphere. Analytical expressions for the electric field cannot produce these channels of intense plasma flow, and thus result in less entry and energization of the plasma sheet into near-Earth space. For the ions, omission of these channels leads to an underprediction of the strength of the stormtime ring current and therefore an underestimation of the geoeffectiveness of the storm event. For the electrons, omission of these channels leads to the inability to create a seed population of 10-100 keV electrons deep in the inner magnetosphere. These electrons can eventually be accelerated into MeV radiation belt particles.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

Temperature gradient scale length measurement: A high accuracy application of electron cyclotron emission without calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houshmandyar, S., E-mail: houshmandyar@austin.utexas.edu; Phillips, P. E.; Rowan, W. L.

2016-11-15

Calibration is a crucial procedure in electron temperature (T{sub e}) inference from a typical electron cyclotron emission (ECE) diagnostic on tokamaks. Although the calibration provides an important multiplying factor for an individual ECE channel, the parameter ΔT{sub e}/T{sub e} is independent of any calibration. Since an ECE channel measures the cyclotron emission for a particular flux surface, a non-perturbing change in toroidal magnetic field changes the view of that channel. Hence the calibration-free parameter is a measure of T{sub e} gradient. B{sub T}-jog technique is presented here which employs the parameter and the raw ECE signals for direct measurement ofmore » electron temperature gradient scale length.« less

Site-specific electronic structure analysis by channeling EELS and first-principles calculations.

PubMed

Tatsumi, Kazuyoshi; Muto, Shunsuke; Yamamoto, Yu; Ikeno, Hirokazu; Yoshioka, Satoru; Tanaka, Isao

2006-01-01

Site-specific electronic structures were investigated by electron energy loss spectroscopy (EELS) under electron channeling conditions. The Al-K and Mn-L(2,3) electron energy loss near-edge structure (ELNES) of, respectively, NiAl2O4 and Mn3O4 were measured. Deconvolution of the raw spectra with the instrumental resolution function restored the blunt and hidden fine features, which allowed us to interpret the experimental spectral features by comparing with theoretical spectra obtained by first-principles calculations. The present method successfully revealed the electronic structures specific to the differently coordinated cationic sites.

The electronic properties of SWNTs intercalated by electron acceptors

NASA Astrophysics Data System (ADS)

Chernysheva, M. V.; Kiseleva, E. A.; Verbitskii, N. I.; Eliseev, A. A.; Lukashin, A. V.; Tretyakov, Yu. D.; Savilov, S. V.; Kiselev, N. A.; Zhigalina, O. M.; Kumskov, A. S.; Krestinin, A. V.; Hutchison, J. L.

2008-05-01

Here we report synthesis of Chal@SWNT nanocomposites (where Chal=S, Se and Te) and the impact of the intercalated electron-acceptor compounds on the electronic properties of SWNTs. The chalcogens were introduced to the channels of single-walled carbon nanotubes by molten media technique via impregnation of pre-opened SWNTs with melted guest compounds in vacuum. HRTEM imaging confirms the filling of nanotube channels by continuous nanostructures of corresponding chalcogens. The strong influence of incorporated matter on the electronic properties of the SWNTs was detected by Raman spectroscopy.

Transmission electron microscopy characterization of a large-pore titanium silicate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bozhilov, K.N.; Valtchev, V.P.

1993-11-01

The large-pore titanium silicate ETS-10, synthesized with tetramethylammonium, was characterized by means of TEM. The parameters of an orthorhombic unit cell, a = 14.79 [angstrom], b = 14.5 [angstrom], c = 13.06 [angstrom], were determined based on both electron and x-ray diffraction data. A one-dimensional channel structure is proposed, with channels running parallel to [001]. The cations and molecules occupying channel positions display significant positional disorder.

Performances of the Front-End Electronics for the HADES RPC TOF wall on a 12C beam

NASA Astrophysics Data System (ADS)

Belver, D.; Cabanelas, P.; Castro, E.; Díaz, J.; Garzón, J. A.; Gil, A.; Gonzalez-Diaz, D.; Koenig, W.; Traxler, M.; Zapata, M.

2009-05-01

A Front-End Electronics (FEE) chain for timing accurate measurements has been developed for the RPC wall upgrade of the High-Acceptance DiElectron Spectrometer (HADES). The wall will cover an area of around 8 m with 1122 RPC cells (2244 electronic channels). The FEE chain consists of two boards: a four-channel DaughterBOard (DBO) and a 32-channel MotherBOard (MBO). The DBO uses a fast 2 GHz amplifier feeding a discriminator. The time and the charge information are encoded in the leading and the trailing edge (by a charge to width method) of an LVDS signal. Each MBO houses up to eight DBOs providing them regulated voltage supply, threshold values via DACs, test signals and collection of their trigger outputs. The MBO delivers LVDS signals to a time-to-digital converter readout board (TRB) based on HPTDC for data acquisition. In this work, we present the performance of the FEE measured using: (a) narrow electronic test pulses and (b) real signals read out in a fully instrumented RPC sextant installed in its final position at the HADES. The detector was exposed to particles coming from reactions of a 12C beam on Be and Nb targets at 2 GeV/A kinetic energy. Results for the whole electronic chain (DBO+MBO+TRB) show a timing jitter of around 40 ps/channel for pulses above 100 fC and 80 ps/channel for beam data taken with the RPC.

Hard X-ray time profiles and acceleration processes in large solar flares

NASA Technical Reports Server (NTRS)

Bai, T.; Ramaty, R.

1979-01-01

The hard X-ray time profiles of the (1972) August 4 and 7 flares are investigated, taking into account a comparison of the time profiles of different energy channels. It is shown that for these flares the temporal features of the intensity profiles of higher energy channels are delayed with respect to those of channel 1. The delay time gradually increases to approximately 5 sec as the channel number increases from 1 to 5, and it jumps to approximately 15 sec for channels 6 and 7. A description is presented of a model in which the delay and other characteristics of the observed time profiles in channels 1-5 are self-consistently explained by the increase of the electron energy loss time with electron energy.

Dynamic modification of optical nonlinearities related to femtosecond laser filamentation in gases

NASA Astrophysics Data System (ADS)

Romanov (1, 3), Dmitri; Tarazkar (2, 3), Maryam; Levis (2, 3), Robert

2017-04-01

During and immediately after the passing of a filamenting laser pulse through a gas-phase medium, the nonlinear optical characteristics of the emerging filament-wake channel undergo substantial transient modification, which stems from ionization and electronic excitation of constituent atoms/molecules. We calculate the related hyperpolarizability coefficients of individual ions, and we develop a theoretical model of filament channel evolution applicable to atmospheric-pressure and high-pressure gases. The evolution is mediated by energetic free-electron gas that results from the strong-field ionization and gains considerable energy via inverse Bremsstrahlung process. The ensuing impact ionization and excitation of the residual neutral atoms/molecules proceeds inhomogeneously both inside the channel and on its surface, being strongly influenced by the thermal conduction of the electron gas. The model shows critical importance of channel-surface effects, especially as regards the effective electron temperature. The calculated spatial-temporal evolution patterns ultimately determine the transient modifications of linear and nonlinear optical properties of filament wake channels. Medium-specific estimates are made for atmospheric- and high-pressure argon, as well as for molecular nitrogen gas. Support of Defense Threat Reduction Agency (Grant No. HDTRA1-12-1-0014) is gratefully acknowledged.

Simulation model for electron irradiated IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

2018-02-01

An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

Carrier Injection and Scattering in Atomically Thin Chalcogenides

NASA Astrophysics Data System (ADS)

Li, Song-Lin; Tsukagoshi, Kazuhito

2015-12-01

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

Analysis of FIB-induced damage by electron channelling contrast imaging in the SEM.

PubMed

Gutierrez-Urrutia, Ivan

2017-01-01

We have investigated the Ga + ion-damage effect induced by focused ion beam (FIB) milling in a [001] single crystal of a 316 L stainless steel by the electron channelling contrast imaging (ECCI) technique. The influence of FIB milling on the characteristic electron channelling contrast of surface dislocations was analysed. The ECCI approach provides sound estimation of the damage depth produced by FIB milling. For comparison purposes, we have also studied the same milled surface by a conventional electron backscatter diffraction (EBSD) approach. We observe that the ECCI approach provides further insight into the Ga + ion-damage phenomenon than the EBSD technique by direct imaging of FIB artefacts in the scanning electron microscope. We envisage that the ECCI technique may be a convenient tool to optimize the FIB milling settings in applications where the surface crystal defect content is relevant. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Charged and Neutral Particles Channeling Phenomena Channeling 2008

NASA Astrophysics Data System (ADS)

Dabagov, Sultan B.; Palumbo, Luigi

2010-04-01

On the discovery of coherent Bremsstrahlung in a single crystal at the Frascati National Laboratories / C. Barbiellini, G. P. Murtas and S. B. Dabagov -- Advances in coherent Bremsstrahlung and LPM-effect studies (to the lOOth anniversary from the birth of L. D. Landau) / N. F. Shul'ga -- Spectra of radiation and created particles at intermediate energy in oriented crystal taking into account energy loss / V. N. Baier and V. M. Katkov -- The coherent Bremsstrahlung beam at MAX-lab facility / K. Fissum ... [et al.] -- Radiation from thin, structured targets (CERN NA63) / A. Dizdar -- Hard incoherent radiation in thick crystals / N. F. Shul'ga, V. V. Syshchenko and A. I. Tarnovsky -- Coherent Bremsstrahlung in periodically deformed crystals with a complex base / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Induction of coherent x-ray Bremsstrahlung in crystals under the influence of acoustic waves / A. R. Mkrtchyan and V. V. Parazian -- Coherent processes in bent single crystals / V. A. Maisheev -- Experimental and theoretical investigation of complete transfer phenomenon for media with various heat exchange coefficients / A. R. Mkrtchyan, A. E. Movsisyan and V. R. Kocharyan -- Coherent pair production in crystals / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Negative particle planar and axial channeling and channeling collimation / R. A. Carrigan, Jr. -- CERN crystal-based collimation in modern hadron colliders / W. Scandale -- Studies and application of bent crystals for beam steering at 70 GeV IHEP accelerator / A. G. Afonin ... [et al.] -- Crystal collimation studies at the Tevatron (T-980) / N. V. Mokhov ... [et al.] -- Fabrication of crystals for channeling of particles in accellerators / A. Mazzolari ... [et al.] -- New possibilities to facilitate collimation of both positively and negatively charged particle beams by crystals / V. Guidi, A. Mazzolari and V. V. Tikhomirov -- Increase of probability of particle capture into the channeling regime by a buried oxide layer / V. Guidi, A. Mazzolari and V. V. Tikhomirov -- A positron source using channeling in crystals for linear colliders / X. Artru ... [et al.] -- Parametric channeling and collapse of charged particles beams in crystals / M. Vysotskyy and V. Vysotskii.The formation and usage of coherent correlated charged particles states in the physics of channeling in crystals / S. V. Adamenko, V. I. Vysotskii and M. V. Vysotskyy -- Surface channeling of magnetic-charged particles on multilayer surface / S. V. Adamenko and V. I. Vysotskii -- Coherent creation of anti-hydrogen atoms in a crystal by relativistic antiproton / Yu. P. Kunashenko -- Thermal equilibrium of light ions in heavy crystals / E. Tsyganov -- Photon emission of electrons in a crystalline undulator / H. Backe ... [et al.] -- Channeling radiation from relativistic electrons in a crystal target as complementary x-ray and gamma ray source at synchrotron light facilities / K. B. Korotchenko, Yu. L. Pivovarov and T. A. Tukhfatullin -- Diffracted channeling radiation and other compound radiation processes / H. Nitta -- Collective scattering on the atom planes under the condition of full transition / A. R. Mkrtchyan ... [et al.] -- The proposal of the experiment on the research of the diffracted channeling radiation / D. A. Baklanov ... [et al.] -- Positron channeling at the DaOne BTF Facility: the cup experiment / L. Quintieri ... [et al.] -- Radiation spectra of 200 MeV electrons in diamond and silicon crystals at axial and planar orientations / K. Fissum ... [et al.] -- Channeling experiments with electrons at the Mainz Microtron Mami / W. Lauth ... [et al.] -- Dechanneling of positrons by dislocations: effects of anharmonic interactions / J. George and A. P. Pathak -- Diffracted channeling radiation from axially channeled relativistic electrons / K. B. Korotchenko ... [et al.] -- Intensive quasi-monochromatic, directed x-ray radiation of planar channeled positron bunch / L. Gevorgian -- Probing channeling radiation influenced by ultrasound / W. Wagner ... [et al.] -- Radiation characteristics under electrons planar channeling and quasichanneling in complex crystals / L. Gevorgian -- Formation of relativistic positron atoms by axially channeled positrons and their decay on [symbol]-rays / A. Gevorkyan, A. R. Mkrtchyan and K. Oganesyan -- New features of diffracted channeling radiation from electrons in Si and LiF Crystals / K. B. Korotchenko, Yu. L. Pivovarov and T. A. Tukhfatullin -- Modulated particle beam in a crystal channel / A. Kostyuk ... [et al.] -- Computer simulations of resonant coherent excitation of heavy hydrogenlike ions under planar channeling / A. A. Babaev and Yu. L. Pivovarov -- Parametric x-ray and diffracted transition radiation of 4.5 GeV electrons in diamond / R. O. Avakian ... [et al.] -- Possible use of small accelerators in student laboratory for engineering education / I. Endo, M. Tanaka and T. Yoshimura.The Status of the SPARC Project / A. Cianchi -- Laser-plasma acceleration: first experimental results from the Plasmon-X Project / L. A. Gizzi ... [et al.] -- The powerful nanosecond duration electron beam effect on the crystalline tungsten target / Y. N. Adischev ... [et al.] -- "Shadowing" of the electromagnetic field of a relativistic electron / G. Naumenko ... [et al.] -- The acceleration of the charged particles in a low temperature acoustoplasma / A. S. Abrahamyan, A. R. Mkrtchyan and R. B. Kostanyan -- The experimental study of the surface current excitation by a relativistic electron electromagnetic field / G. A. Naumenko ... [et al.] -- Synchrotron radiation from a charge moving along helical orbit around a dielectric cylinder / A. A. Saharian and A. S. Kotanjyan -- Particle acceleration in a helical wave guide / X. Artru and C. Ray -- Effect of heavy ion charge fluctuations on Cherenkov radiation / V. S. Malyshevsky -- Hard photons powerful radiation of electron bunch interacting with plasma beat waves / A. Shamamian and L. Gevorgian -- Diffraction radiation as a diagnostics tool at flash / M. Castellano, E. Chiadroni and A. Cianchi -- Methods of charged particle beam cooling / E. G. Bessonov -- Ray tracing calculation of PXR produced in curved and flat crystals by electron beams with large emittance / K. A. Ispirian ... [et al.] -- On dynamic effects in coherent x-radiation of relativistic electron in Bragg scattering geometry / S. V. Blazhevich and A. V. Noskov -- Optimization of relativistic electron diffracted transition radiation yield / S. V. Blazhevich and A. V. Noskov -- Geometrical effect of target crystal on PXR generation as a coherent x-ray source / Y. Hayakawa ... [et al.] -- Observation of dynamical maxima of parametric x-ray radiation for 20 Me V electron energy beam / A. R. Mkrtchyan ... [et al.] -- The comparison of monochromatic x-ray sources based on compact electron accelerators and x-ray tube / Yu. N. Adischev ... [et al.] -- Labsync: a project to develop a European facility based on a table-top synchrotron light source / G. Di Domenico ... [et al.] -- New experimental results with optical diffraction radiation diagnostics / E. Chiadroni ... [et al.] -- The radiation yield in different spectral ranges from low density structured laser plasma with different high Z-admixture / V. Rozanov and G. Vergunova -- Time and angular distributions of ions transmitted through insulating capillaries / F. F. Komarov and A. S. Kamyshan -- X-ray propagation in multiwall carbon nanotubes / P. A. Childs ... [et al.] -- Tunable x-ray source based on mosaic crystals using for medicine applications / D. A. Baklanov ... [et al.] -- Capillary optics based x-ray micro-imaging elemental analysis / D. Hampai ... [et al.] -- Neutron number enhancement in uranium thin film waveguides / S. P. Pogossian -- Schwinger scattering of fast neutrons in aligned crystal / Yu. P. Kunashenko and Yu. L. Pivovarov -- Experimental investigation of Smith-Purcell radiation focusing by using the parabolic gratings / G. A. Naumenko ... [et al.] -- Plasma channels in air produced by UV laser beam: mechanisms of photoionization and possible applications/ V. D. Zvorykin ... [et al.].

Effect of Segmented Electrode Length on the Performances of an Aton-Type Hall Thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Bian, Xingyu; Cao, Anning; Liu, Guangrui; Chen, Long; Yin, Yan

2016-05-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of a Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on the potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of the segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, the radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of the ionization rate in the discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected. supported by National Natural Science Foundation of China (Nos. 11375039 and 11275034) and the Key Project of Science and Technology of Liaoning Province, China (No. 2011224007) and the Fundamental Research Funds for the Central Universities, China (No. 3132014328)

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carnevale, Santino D.; Deitz, Julia I.; Carlin, John A.

Electron channeling contrast imaging (ECCI) is used to characterize misfit dislocations in heteroepitaxial layers of GaP grown on Si(100) substrates. Electron channeling patterns serve as a guide to tilt and rotate sample orientation so that imaging can occur under specific diffraction conditions. This leads to the selective contrast of misfit dislocations depending on imaging conditions, confirmed by dynamical simulations, similar to using standard invisibility criteria in transmission electron microscopy (TEM). The onset and evolution of misfit dislocations in GaP films with varying thicknesses (30 to 250 nm) are studied. This application simultaneously reveals interesting information about misfit dislocations in GaP/Si layersmore » and demonstrates a specific measurement for which ECCI is preferable versus traditional plan-view TEM.« less

Dissociative electron attachment to DNA-diamine thin films: Impact of the DNA close environment on the OH− and O− decay channels

PubMed Central

Boulanouar, Omar; Fromm, Michel; Mavon, Christophe; Cloutier, Pierre; Sanche, Léon

2013-01-01

We measure the desorption of anions stimulated by the impact of 0–20 eV electrons on highly uniform thin films of plasmid DNA-diaminopropane. The results are accurately correlated with film thickness and composition by AFM and XPS measurements, respectively. Resonant structures in the H−, O−, and OH− yield functions are attributed to the decay of transient anions into the dissociative electron attachment (DEA) channel. The diamine induces ammonium-phosphate bridges along the DNA backbone, which suppresses the DEA O− channel and in counter-part increases considerably the desorption of OH−. The close environment of the phosphate groups may therefore play an important role in modulating the rate and type of DNA damages induced by low energy electrons. PMID:23927286

Adiabatic perturbation theory of electronic stopping in insulators

DOE PAGES

Horsfield, Andrew P.; Lim, Anthony; Foulkes, W. M. C.; ...

2016-06-02

A model able to explain the complicated structure of electronic stopping at low velocities in insulating materials is presented. It is shown to be in good agreement with results obtained from time-dependent density-functional theory for the stopping of a channeling Si atom in a Si crystal. If we define the repeat frequency f=v/λ, where λ is the periodic repeat length of the crystal along the direction the channeling atom is traveling, and v is the velocity of the channeling atom, we find that electrons experience a perturbing force that varies in time at integer multiples l of f. This enablesmore » electronic excitations at low atom velocity, but their contributions diminish rapidly with increasing values of l. The expressions for stopping power are derived using adiabatic perturbation theory for many-electron systems, and they are then specialized to the case of independent electrons. Lastly, a simple model for the nonadiabatic matrix elements is described, along with the procedure for determining its parameters.« less

Coherent beam combining in atmospheric channels using gated backscatter.

PubMed

Naeh, Itay; Katzir, Abraham

2016-02-01

This paper introduces the concept of atmospheric channels and describes a possible approach for the coherent beam combining of lasers of an optical phased array (OPA) in a turbulent atmosphere. By using the recently introduced sparse spectrum harmonic augmentation method, a comprehensive simulative investigation was performed and the exceptional properties of the atmospheric channels were numerically demonstrated. Among the interesting properties are the ability to guide light in a confined manner in a refractive channel, the ability to gather different sources to the same channel, and the ability to maintain a constant relative phase within the channel between several sources. The newly introduced guiding properties combined with a suggested method for channel probing and phase measurement by aerosol backscattered radiation allows coherence improvement of the phased array's elements and energy refocusing at the location of the channel in order to increase power in the bucket without feedback from the target. The method relies on the electronic focusing, electronic scanning, and time gating of the OPA, combined with elements of the relative phase measurements.

A Crash Course in Calcium Channels.

PubMed

Zamponi, Gerald W

2017-12-20

Much progress has been made in understanding the molecular physiology and pharmacology of calcium channels. Recently, there have been tremendous advances in learning about calcium channel structure and function through crystallography and cryo-electron microscopy studies. Here, I will give an overview of our knowledge about calcium channels, and highlight two recent studies that give important insights into calcium channel structure.

Strategic Positioning of the Web in a Multi-Channel Market Approach.

ERIC Educational Resources Information Center

Simons, Luuk P. A.; Steinfield, Charles; Bouwman, Harry

2002-01-01

Discusses channel economics in retail activities and trends toward unbundling due to the emergence of the Web channel. Highlights include sales processes and physical distribution processes; transaction costs; hybrid electronic commerce strategies; channel management and customer support; information economics, thing economics, and service…

Digitally controlled high-performance dc SQUID readout electronics for a 304-channel vector magnetometer

NASA Astrophysics Data System (ADS)

Bechstein, S.; Petsche, F.; Scheiner, M.; Drung, D.; Thiel, F.; Schnabel, A.; Schurig, Th

2006-06-01

Recently, we have developed a family of dc superconducting quantum interference device (SQUID) readout electronics for several applications. These electronics comprise a low-noise preamplifier followed by an integrator, and an analog SQUID bias circuit. A highly-compact low-power version with a flux-locked loop bandwidth of 0.3 MHz and a white noise level of 1 nV/√Hz was specially designed for a 304-channel low-Tc dc SQUID vector magnetometer, intended to operate in the new Berlin Magnetically Shielded Room (BMSR-2). In order to minimize the space needed to mount the electronics on top of the dewar and to minimize the power consumption, we have integrated four electronics channels on one 3 cm × 10 cm sized board. Furthermore we embedded the analog components of these four channels into a digitally controlled system including an in-system programmable microcontroller. Four of these integrated boards were combined to one module with a size of 4 cm × 4 cm × 16 cm. 19 of these modules were implemented, resulting in a total power consumption of about 61 W. To initialize the 304 channels and to service the system we have developed software tools running on a laptop computer. By means of these software tools the microcontrollers are fed with all required data such as the working points, the characteristic parameters of the sensors (noise, voltage swing), or the sensor position inside of the vector magnetometer system. In this paper, the developed electronics including the software tools are described, and first results are presented.

The pair-production channel in atomic processes

NASA Astrophysics Data System (ADS)

Belkacem, Ali; Sørensen, Allan H.

2006-06-01

Assisted by the creation of electron-positron pairs, new channels for ionization, excitation, and charge transfer open in atomic collisions when the energy is raised to relativistic values. At extreme energies these pair-production channels usually dominate the "traditional" contributions to cross sections that involve only "positive-energy" electrons. An extensive body of theoretical and experimental work has been performed over the last two decades to investigate charge-changing processes catalyzed by pair production in relativistic heavy ion collisions. We review some of these studies.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

Ultra-high gradient channeling acceleration in nanostructures: Design/progress of proof-of-concept (POC) experiments

NASA Astrophysics Data System (ADS)

Shin, Y. M.; Green, A.; Lumpkin, A. H.; Thurman-Keup, R. M.; Shiltsev, V.; Zhang, X.; Farinella, D. M.-A.; Taborek, P.; Tajima, T.; Wheeler, J. A.; Mourou, G.

2017-03-01

A short bunch of relativistic particles, or a short-pulse laser, perturb the density state of conduction electrons in a solid crystal and excite wakefields along atomic lattices in a crystal. Under a coupling condition between a driver and plasma, the wakes, if excited, can accelerate channeling particles with TeV/m acceleration gradients [1], in principle, since the density of charge carriers (conduction electrons) in solids n0 = 1020 - 1023 cm-3 is significantly higher than what was considered above in gaseous plasma. Nanostructures have some advantages over crystals for channeling applications of high power beams. The de-channeling rate can be reduced and the beam acceptance increased by the large size of the channels. For beam-driven acceleration, a bunch length with a sufficient charge density would need to be in the range of the plasma wavelength to properly excite plasma wakefields, and channeled particle acceleration with the wakefields must occur before the ions in the lattices move beyond the restoring threshold. In the case of the excitation by short laser pulses, the dephasing length is appreciably increased with the larger channel, which enables channeled particles to gain sufficient amounts of energy. This paper describes simulation analyses on beam- and laser (X-ray)-driven accelerations in effective nanotube models obtained from the Vsim and EPOCH codes. Experimental setups to detect wakefields are also outlined with accelerator facilities at Fermilab and Northern Illinois University (NIU). In the FAST facility, the electron beamline was successfully commissioned at 50 MeV, and it is being upgraded toward higher energies for electron accelerator R&D. The 50 MeV injector beamline of the facility is used for X-ray crystal-channeling radiation with a diamond target. It has been proposed to utilize the same diamond crystal for a channeling acceleration proof-of-concept (POC). Another POC experiment is also designed for the NIU accelerator lab with time-resolved electron diffraction. Recently, a stable generation of single-cycle laser pulses with tens of Petawatt power based on the thin film compression (TFC) technique has been investigated for target normal sheath acceleration (TNSA) and radiation pressure acceleration (RPA). The experimental plan with a nanometer foil is discussed with an available test facility such as Extreme Light Infrastructure - Nuclear Physics (ELI-NP).

Nonlinear Optoacoustic Underwater Sound.

DTIC Science & Technology

1988-01-11

sufficiently high plasma densities, the plasma itself may act as an acoustic ] amplifier, channeling electronic energy into acoustic energy. The shock pulse... channeled into the production of electron charge carriers, the law of conservation of energy dictates that the upperbound of the electron yield must be...temperature of the water by approximately 10C from room 100 - t bLT WV *A% IV * , . . ..1- KV7 b * .% r.- V-V I 7 TABLE V 0 EQUILIBRIUM BLAST MODEL CASE

Nonlinear electronic stopping power of channeled slow light ions in ZnSe: Evidence of energy loss caused by formation and breaking of chemical bond

NASA Astrophysics Data System (ADS)

Li, Chang-kai; Wang, Feng; Gao, Cong-Zhang; Liao, Bin; Ouyang, Xiao-ping; Zhang, Feng-Shou

2018-07-01

Electronic stopping power of helium ions in a semiconductor material ZnSe has been investigated through non-adiabatic dynamics simulations at energies of a few keV under channeling condition. The stopping power is predicted to be proportional to velocity for the trajectory along middle axis of a 〈 1 1 0 〉 channel, as expected for the linear response theory accounts for election-hole pair creation. While for the off-center channeling trajectory, a counterintuitive of electronic stopping power versus velocity is observed. Our study, presented herein, finds a non-trivial connection between charge transfer and the force experienced by the projectile. Charge transfer can produce, throughout the collision process, additional force by continuously forming and breaking instantaneous chemical bonds between the projectile and the neighboring host atoms.

Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

DTIC Science & Technology

2016-04-01

noise, and energy relaxation for doped zinc-oxide and structured ZnO transistor materials with a 2-D electron gas (2DEG) channel subjected to a strong...function on the time delay. Closed symbols represent the Monte Carlo data with hot-phonon effect at different electron gas density: 1•1017 cm-3...Monte Carlo simulation is performed for electron gas density of 1•1018 cm-3. Figure 18. Monte Carlo simulation of density-dependent hot-electron energy

Producing ‘superponderomotive’ electrons in ashort cavitated channel

NASA Astrophysics Data System (ADS)

Wang, J.; Yang, Y.; Zhao, Z. Q.; Wu, Y. C.; Dong, K. G.; Zhang, T. K.; Gu, Y. Q.

2017-11-01

Particle-in-cell simulations suggest that a short cavitated channel in relativistic near-critical density plasma can be readily created by relativistic self-transparency and hole-boring effect. The strong self-generated magnetic fields confine the electrons in the plasma channel. Assisted by the magnetic fields, the electrons resonance with the laser fields at betatron resonance frequency {ω }β . Consequently, highly energetic electrons with small divergence can be created by the betatron resonance regime. However, preliminary experiment results show higher temperature and larger divergence, compared to our simulation results. We argue that this difference would come from imperfect homogenization of foam target. Thus, the classical betatron resonance heating regime in a large scale of pre-plasma, which is proposed by Pukhov et al (1996 Phys. Rev. Lett. 76, 3975-8), would explain the experiment results instead.

Radiation Environment Model of Protons and Heavier Ions at Jupiter

NASA Technical Reports Server (NTRS)

Sierra, Luz Maria Martinez; Garrett, Henry B.; Jun, Insoo

2015-01-01

We performed an in depth study of the methods used to review the geometric factors (GF) and sensitivity to charge particles of the Energetic Particle Detector instrument on board the Galileo Spacecraft. Monte Carlo simulations were performed to understand the interactions of electrons and ions (i. e., protons and alphas) with the sensitive regions of the instrument. The DC0 and B0 channels were studied with the intention of using them to update the jovian proton radiation model. The results proved that the B0 is a clean proton chanel without any concerns for contamination by heavier ions and electrons. In contrast, DC0 was found to be contaminated by electrons. Furthermore, we also found out that the B2 channel is a clean alpha particle channel (in other words, no contamination by electrons and/or protons).

[The study on the characteristics and particle densities of lightning discharge plasma].

PubMed

Wang, Jie; Yuan, Ping; Zhang, Hua-ming; Shen, Xiao-zhi

2008-09-01

According to the wavelengths, relative intensities and transition parameters of lines in cloud-to-ground lightning spectra obtained by a slit-less spectrograph in Qinghai province and Xizang municipality, and by theoretical calculations of plasma, the average temperature and electron density for individual lightning discharge channel were calculated, and then, using Saha equations, electric charge conservation equations and particle conservation equations, the particle densities of every ionized-state, the mass density, pressure and the average ionization degree were obtained. Moreover, the average ionization degree and characteristics of particle distributions in each lightning discharge channel were analyzed. Local thermodynamic equilibrium and an optically thin emitting gas were assumed in the calculations. The result shows that the characteristics of lightning discharge plasma have strong relationships with lightning intensities. For a certain return stroke channel, both temperatures and electron densities of different positions show tiny trend of falling away with increasing height along the discharge channel. Lightning channels are almost completely ionized, and the first ionized particles occupy the main station while N II has the highest particle density. On the other hand, the relative concentrations of N II and O II are near a constant in lightning channels with different intensities. Generally speaking, the more intense the lightning discharge, the higher are the values of channel temperature, electron density and relative concentrations of highly ionized particles, but the lower the concentration of the neutral atoms. After considering the Coulomb interactions between positive and negative particles in the calculations, the results of ionization energies decrease, and the particle densities of atoms and first ionized ions become low while high-ionized ions become high. At a temperature of 28000 K, the pressure of the discharge channel due to electrons, atoms and ions is about 10 atmospheric pressure, and it changes for different lightning stroke with different intensity. The mass density of channel is lower and changes from 0.01 to 0.1 compared to the mass density of air at standard temperature and pressure (STP).

Effect of nano-scale morphology on micro-channel wall surface and electrical characterization in lead silicate glass micro-channel plate

NASA Astrophysics Data System (ADS)

Cai, Hua; Li, Fangjun; Xu, Yanglei; Bo, Tiezhu; Zhou, Dongzhan; Lian, Jiao; Li, Qing; Cao, Zhenbo; Xu, Tao; Wang, Caili; Liu, Hui; Li, Guoen; Jia, Jinsheng

2017-10-01

Micro-channel plate (MCP) is a two dimensional arrays of microscopic channel charge particle multiplier. Silicate composition and hydrogen reduction are keys to determine surface morphology of micro-channel wall in MCP. In this paper, lead silicate glass micro-channel plates in two different cesium contents (0at%, 0.5at%) and two different hydrogen reduction temperatures (400°C,450°C) were present. The nano-scale morphology, elements content and chemical states of microporous wall surface treated under different alkaline compositions and reduction conditions was investigated by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS), respectively. Meanwhile, the electrical characterizations of MCP, including the bulk resistance, electron gain and the density of dark current, were measured in a Vacuum Photoelectron Imaging Test Facility (VPIT).The results indicated that the granular phase occurred on the surface of microporous wall and diffuses in bulk glass is an aggregate of Pb atom derived from the reduction of Pb2+. In micro-channel plate, the electron gain and bulk resistance were mainly correlated to particle size and distribution, the density of dark current (DDC) went up with the increasing root-mean-square roughness (RMS) on the microporous wall surface. Adding cesiums improved the size of Pb atomic aggregation, lowered the relative concentration of [Pb] reduced from Pb2+ and decreased the total roughness of micro-channel wall surface, leading a higher bulk resistance, a lower electron gain and a less dark current. Increasing hydrogen reduction temperature also improved the size of Pb atomic aggregation, but enhanced the relative concentration of [Pb] and enlarged the total roughness of micro-channel wall surface, leading a higher bulk resistance, a lower electron gain and a larger dark current. The reasons for the difference of electrical characteristics were discussed.

29 CFR 1926.1420 - Signals-radio, telephone or other electronic transmission of signals.

Code of Federal Regulations, 2011 CFR

2011-07-01

... CONSTRUCTION Cranes and Derricks in Construction § 1926.1420 Signals—radio, telephone or other electronic... must be through a dedicated channel, except: (1) Multiple cranes/derricks and one or more signal persons may share a dedicated channel for the purpose of coordinating operations. (2) Where a crane is...

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

On the mechanism of X-ray production by dart leaders of lightning flashes

NASA Astrophysics Data System (ADS)

Cooray, Vernon; Dwyer, Joseph; Rakov, V.; Rahman, Mahbubur

2010-07-01

Radiation with energies up to about 250 keV associated with the dart leader phase of rocket-triggered lightning were reported by Dwyer et al. (2004). The mechanism of X-ray generation by dart leaders, however, is unknown at present. Recently, Cooray et al. (2009a) developed physical concepts and mathematical techniques necessary to calculate the electric field associated with the tip of dart leaders. We have utilized the results of these calculations together with the energy dependent frictional force on electrons, as presented by Moss et al. (2006), to evaluate the maximum energy an electron will receive in accelerating in the dart-leader-tip electric field. The main assumptions made in performing the calculations are: (a) the dart leader channel is straight and vertical; (b) the path of the electrons are straight inside the channel; and (c) the decay of the channel temperature is uniform along the length of the dart leader. In the calculation, we have taken into account the fact that the electric field is changing both in space and time and that the gas in the defunct return stroke channel is at atmospheric pressure and at elevated temperature (i.e. reduced gas density). The results of the calculation show that for a given dart leader current there is a critical defunct-return-stroke-channel temperature above which the cold electron runaway becomes feasible. For a typical dart leader, this temperature is around 2500 K. This critical temperature decreases with increase in dart leader current. Since the temperature of the defunct return stroke channel may lie in the range of 2000-4000 K, the results show that the electric field at the tip of dart leaders is capable of accelerating electrons to MeV energy levels.

A high-throughput, multi-channel photon-counting detector with picosecond timing

NASA Astrophysics Data System (ADS)

Lapington, J. S.; Fraser, G. W.; Miller, G. M.; Ashton, T. J. R.; Jarron, P.; Despeisse, M.; Powolny, F.; Howorth, J.; Milnes, J.

2009-06-01

High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchannel plate devices with very high time resolution, and high-speed multi-channel ASIC electronics developed for the LHC at CERN, provides the necessary building blocks for a high-throughput detector system with up to 1024 parallel counting channels and 20 ps time resolution. We describe the detector and electronic design, discuss the current status of the HiContent project and present the results from a 64-channel prototype system. In the absence of an operational detector, we present measurements of the electronics performance using a pulse generator to simulate detector events. Event timing results from the NINO high-speed front-end ASIC captured using a fast digital oscilloscope are compared with data taken with the proposed electronic configuration which uses the multi-channel HPTDC timing ASIC.

Impact of geometric, thermal and tunneling effects on nano-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Langhua; Chen, Duan, E-mail: dchen10@uncc.edu; Wei, Guo-Wei

Electronic transistors are fundamental building blocks of large scale integrated circuits in modern advanced electronic equipments, and their sizes have been down-scaled to nanometers. Modeling and simulations in the framework of quantum dynamics have emerged as important tools to study functional characteristics of these nano-devices. This work explores the effects of geometric shapes of semiconductor–insulator interfaces, phonon–electron interactions, and quantum tunneling of three-dimensional (3D) nano-transistors. First, we propose a two-scale energy functional to describe the electron dynamics in a dielectric continuum of device material. Coupled governing equations, i.e., Poisson–Kohn–Sham (PKS) equations, are derived by the variational principle. Additionally, it ismore » found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section offers the largest channel current, which indicates that ultra-thin nanotransistors may not be very efficient in practical applications. Moreover, we introduce a new method to evaluate quantum tunneling effects in nanotransistors without invoking the comparison of classical and quantum predictions. It is found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section has the smallest quantum tunneling ratio, which indicates that geometric defects can lead to higher geometric confinement and larger quantum tunneling effect. Furthermore, although an increase in the phonon–electron interaction strength reduces channel current, it does not have much impact to the quantum tunneling ratio. Finally, advanced numerical techniques, including second order elliptic interface methods, have been applied to ensure computational accuracy and reliability of the present PKS simulation.« less

Band gap engineering by swift heavy ions irradiation induced amorphous nano-channels in LiNbO3

DOE PAGES

Sachan, Ritesh; Pakarinen, Olli H.; Liu, Peng; ...

2015-04-01

The irradiation of lithium niobate with swift heavy ions results in the creation of amorphous nano-sized channels along the incident ion path. These nano-channels are on the order of a hundred microns in length and could be useful for photonic applications. However, there are two major challenges in these nano-channels characterization; (i) it is difficult to investigate the structural characteristics of these nano-channels due to their very long length, and (ii) the analytical electron microscopic analysis of individual ion track is complicated due to electron beam sensitive nature of lithium niobate. Here, we report the first high resolution microscopic characterizationmore » of these amorphous nano-channels, widely known as ion-tracks, by direct imaging them at different depths in the material, and subsequently correlating the key characteristics with Se of ions. Energetic Kr ions ( 84Kr 22 with 1.98 GeV energy) are used to irradiate single crystal lithium niobate with a fluence of 2x10 10 ions/cm 2, which results in the formation of individual ion tracks with a penetration depth of ~180 μm. Along the ion path, electron energy loss of the ions, which is responsible for creating the ion tracks, increases with depth under these conditions in LiNbO 3, resulting in increases in track diameter of a factor of ~2 with depth. This diameter increase with electronic stopping power is consistent with predictions of the inelastic thermal spike model. We also show a new method to measure the band gap in individual ion track by using electron energy-loss spectroscopy.« less

LED lamp power management system and method

DOEpatents

Gaines, James; Clauberg, Bernd; Van Erp, Josephus A. M.

2013-03-19

An LED lamp power management system and method including an LED lamp having an LED controller 58; a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 reduces power loss in one of the channel switch 62 and the shunt switch 68 when LED lamp electronics power loss (P.sub.loss) exceeds an LED lamp electronics power loss limit (P.sub.lim); and each of the channel switches 62 receives a channel switch control signal 63 from the LED controller 58 and each of the shunt switches 68 receives a shunt switch control signal 69 from the LED controller 58.

Free RCK arrangement in Kch, a putative escherichia coli potassium channel, as suggested by electron crystallography.

PubMed

Kuang, Qie; Purhonen, Pasi; Jegerschöld, Caroline; Koeck, Philip J B; Hebert, Hans

2015-01-06

The ligand-gated potassium channels are stimulated by various kinds of messengers. Previous studies showed that ligand-gated potassium channels containing RCK domains (the regulator of the conductance of potassium ion) form a dimer of tetramer structure through the RCK octameric gating ring in the presence of detergent. Here, we have analyzed the structure of Kch, a channel of this type from Escherichia coli, in a lipid environment using electron crystallography. By combining information from the 3D map of the transmembrane part of the protein and docking of an atomic model of a potassium channel, we conclude that the RCK domains face the solution and that an RCK octameric gating ring arrangement does not form under our crystallization condition. Our findings may be applied to other potassium channels that have an RCK gating ring arrangement. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electron cryo-microscopy structure of the canonical TRPC4 ion channel

PubMed Central

Vinayagam, Deivanayagabarathy; Mager, Thomas; Apelbaum, Amir; Bothe, Arne; Merino, Felipe; Hofnagel, Oliver; Gatsogiannis, Christos

2018-01-01

Canonical transient receptor channels (TRPC) are non-selective cation channels. They are involved in receptor-operated Ca2+ signaling and have been proposed to act as store-operated channels (SOC). Their malfunction is related to cardiomyopathies and their modulation by small molecules has been shown to be effective against renal cancer cells. The molecular mechanism underlying the complex activation and regulation is poorly understood. Here, we report the electron cryo-microscopy structure of zebrafish TRPC4 in its unliganded (apo), closed state at an overall resolution of 3.6 Å. The structure reveals the molecular architecture of the cation conducting pore, including the selectivity filter and lower gate. The cytoplasmic domain contains two key hubs that have been shown to interact with modulating proteins. Structural comparisons with other TRP channels give novel insights into the general architecture and domain organization of this superfamily of channels and help to understand their function and pharmacology. PMID:29717981

On the generation of multi-MeV electrons using fs-laser pulses

NASA Astrophysics Data System (ADS)

Tsakiris, G. D.; Gahn, C.; Pukhov, A.; Meyer-Ter-Vehn, J.; Pretzler, G.; Witte, K. J.; Thirolf, P.; Habs, D.

1999-11-01

We have experimentally investigated the multi-MeV electron production concomitant to the relativistic self-channeling in a high-density gas jet using 200-fs, 1.2-TW laser pulses. Results of systematic measurements of the angularly resolved and absolutely calibrated electron spectra are presented for plasma electron densities in the range of 3× 10^19-4× 10^20 cm-3. Three-dimensional Particle-in-Cell (PIC) simulations closely reproduce the measured electron spectra. A more detailed analysis indicates that for the case investigated, the dominant electron acceleration mechanism is direct laser acceleration [1] at the channel betatron resonance. [1] A. Pukhov, et al., Phys. Plasmas 6, 2847 (1999).

Multi-channel dynamics in high harmonic generation of aligned CO2: ab initio analysis with time-dependent B-spline algebraic diagrammatic construction.

PubMed

Ruberti, M; Decleva, P; Averbukh, V

2018-03-28

Here we present a fully ab initio study of the high-order harmonic generation (HHG) spectrum of aligned CO 2 molecules. The calculations have been performed by using the molecular time-dependent (TD) B-spline algebraic diagrammatic construction (ADC) method. We quantitatively study how the sub-cycle laser-driven multi-channel dynamics, as reflected in the position of the dynamical minimum in the HHG spectrum, is affected by the full inclusion of both correlation-driven and laser-driven dipole interchannel couplings. We calculate channel-resolved spectral intensities as well as the phase differences between contributions of the different ionization-recombination channels to the total HHG spectrum. Our results show that electron correlation effectively controls the relative contributions of the different channels to the total HHG spectrum, leading to the opening of the new ones (1 2 Π u , 1 2 Σ), previously disregarded for the aligned molecular setup. We conclude that inclusion of many-electron effects into the theoretical interpretation of molecular HHG spectra is essential in order to correctly extract ultrafast electron dynamics using HHG spectroscopy.

Dissociative electron attachment to the radiosensitizing chemotherapeutic agent hydroxyurea

NASA Astrophysics Data System (ADS)

Huber, S. E.; Śmiałek, M. A.; Tanzer, K.; Denifl, S.

2016-06-01

Dissociative electron attachment to hydroxyurea was studied in the gas phase for electron energies ranging from zero to 9 eV in order to probe its radiosensitizing capabilities. The experiments were carried out using a hemispherical electron monochromator coupled with a quadrupole mass spectrometer. Diversified fragmentation of hydroxyurea was observed upon low energy electron attachment and here we highlight the major dissociation channels. Moreover, thermodynamic thresholds for various fragmentation reactions are reported to support the discussion of the experimental findings. The dominant dissociation channel, which was observed over a broad range of energies, is associated with formation of NCO-, water, and the amidogen (NH2) radical. The second and third most dominant dissociation channels are associated with formation of NCNH- and NHCONH2-, respectively, which are both directly related to formation of the highly reactive hydroxyl radical. Other ions observed with significant abundance in the mass spectra were NH2-/O-, OH-, CN-, HNOH-, NCONH2-, and ONHCONH2-.

Channel-resolved photo- and Auger-electron spectroscopy of halogenated hydrocarbons

NASA Astrophysics Data System (ADS)

Ablikim, Utuq; Kaderiya, B.; Kumarapan, V.; Kushawaha, R.; Rudenko, A.; Rolles, D.; Xiong, H.; Berrah, N.; Bomme, C.; Savelyev, E.; Kilcoyne, D.

2016-05-01

Inner-shell photoelectron and Auger electron spectra of polyatomic molecules such as halogenated hydrocarbons are typically hard to interpret and assign due to many overlapping states that form broad bands even in high-resolution measurements. With the help of electron-ion-ion coincidence measurements performed using the velocity map imaging technique, we are able to detect high-energy (<= 150 eV) photo- and Auger electrons in coincidence with two- or many-body ionic fragmentation channels. Such channel-resolved measurements allow disentangling the overlapping electronic structures and help assigning individual components of the electron spectra to specific potential surfaces and final states. In this work, we present measurements on CH3 I, CH2 IBr, and CH2 ICl molecules in the gas-phase using soft x-ray light provided by the Advanced Light Source at LBNL. This project is supported by the DOE, Office of Science, BES, Division of Chemical, Geological and Biological Sciences under Award Number DE-FG02-86ER13491 (U.A., B.K., V.K., A.R., D.R.) and Award Number DE-SC0012376 (H.X., N.B.).

Characteristics of plasma plume in ultrafast laser ablation with a weakly ionized air channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Huaming; Yang, Bo; Mao, Xianglei

We report the influence of femtosecond (fs) laser weakly ionized air channel on characteristics of plasma induced from fs-laser ablation of solid Zr metal target. A novel method to create high temperature, low electron density plasma with intense elemental emission and weak bremsstrahlung emission was demonstrated. Weakly ionized air channel was generated as a result of a non-linear phenomenon. Two-dimensional time-resolved optical-emission images of plasma plumes were taken for plume dynamics analysis. Dynamic physical properties of filament channels were simulated. In particular, we investigated the influence of weakly ionized air channel on the evolution of solid plasma plume. Plasma plumemore » splitting was observed whilst longer weakly ionized air channel formed above the ablation spot. The domination mechanism for splitting is attributed to the long-lived underdense channel created by fs-laser induced weakly ionization of air. The evolutions of atomic/molecular emission intensity, peak broadening, and plasma temperature were analyzed, and the results show that the part of plasma entering weakly ionized air channel features higher initial temperature, lower electron density and faster decay.« less

Characteristics of plasma plume in ultrafast laser ablation with a weakly ionized air channel

DOE PAGES

Hou, Huaming; Yang, Bo; Mao, Xianglei; ...

2018-05-10

We report the influence of femtosecond (fs) laser weakly ionized air channel on characteristics of plasma induced from fs-laser ablation of solid Zr metal target. A novel method to create high temperature, low electron density plasma with intense elemental emission and weak bremsstrahlung emission was demonstrated. Weakly ionized air channel was generated as a result of a non-linear phenomenon. Two-dimensional time-resolved optical-emission images of plasma plumes were taken for plume dynamics analysis. Dynamic physical properties of filament channels were simulated. In particular, we investigated the influence of weakly ionized air channel on the evolution of solid plasma plume. Plasma plumemore » splitting was observed whilst longer weakly ionized air channel formed above the ablation spot. The domination mechanism for splitting is attributed to the long-lived underdense channel created by fs-laser induced weakly ionization of air. The evolutions of atomic/molecular emission intensity, peak broadening, and plasma temperature were analyzed, and the results show that the part of plasma entering weakly ionized air channel features higher initial temperature, lower electron density and faster decay.« less

Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Yang, Jianwen; Liao, Po-Yung; Chang, Ting-Chang; Chen, Bo-Wei; Huang, Hui-Chun; Su, Wan-Ching; Chiang, Hsiao-Cheng; Zhang, Qun

2017-04-01

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with an etching-stop layer (ESL) exhibit an anomalous negative shift of threshold voltage (Vth) under positive bias temperature stress. TFTs with wider and shorter channels show a clear hump phenomenon, resulting from the existence of both main channels and parasitic channels. The electrons trapped in the gate insulator are responsible for the positive shift in the main channel characteristics. The electrons trapped near the IGZO edges and the holes injected into the ESL layer above InGaZnO (IGZO) jointly determine the shift of the parasitic TFT performance.

Calculating the electron temperature in the lightning channel by continuous spectrum

NASA Astrophysics Data System (ADS)

Xiangcheng, DONG; Jianhong, CHEN; Xiufang, WEI; Ping, YUAN

2017-12-01

Based on the theory of plasma continuous radiation, the relationship between the emission intensity of bremsstrahlung and recombination radiation and the plasma electron temperature is obtained. During the development process of a return stroke of ground flash, the intensity of continuous radiation spectrum is separated on the basis of the spectrums with obviously different luminous intensity at two moments. The electron temperature of the lightning discharge channel is obtained through the curve fitting of the continuous spectrum intensity. It is found that electron temperature increases with the increase of wavelength and begins to reduce after the peak. The peak temperature of the two spectra is close to 25 000 K. To be compared with the result of discrete spectrum, the electron temperature is fitted by the O I line and N II line of the spectrum respectively. The comparison shows that the high temperature value is in good agreement with the temperature of the lightning core current channel obtained from the ion line information, and the low temperature at the high band closes to the calculation result of the atomic line, at a low band is lower than the calculation of the atomic line, which reflects the temperature of the luminous channel of the outer corona.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Numerical investigation of thermal performance of a water-cooled mini-channel heat sink for different chip arrangement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikadar, Amitav, E-mail: amitav453@gmail.com; Hossain, Md. Mahamudul; Morshed, A. K. M. M.

Heat transfer from electronic chip is always challenging and very crucial for electronic industry. Electronic chips are assembled in various manners according to the design conditions and limitationsand thus the influence of chip assembly on the overall thermal performance needs to be understand for the efficient design of electronic cooling system. Due to shrinkage of the dimension of channel and continuous increment of thermal load, conventional heat extraction techniques sometimes become inadequate. Due to high surface area to volume ratio, mini-channel have the natural advantage to enhance convective heat transfer and thus to play a vital role in the advancedmore » heat transfer devices with limited surface area and high heat flux. In this paper, a water cooled mini-channel heat sink was considered for electronic chip cooling and five different chip arrangements were designed and studied, namely: the diagonal arrangement, parallel arrangement, stacked arrangement, longitudinal arrangement and sandwiched arrangement. Temperature distribution on the chip surfaces was presented and the thermal performance of the heat sink in terms of overall thermal resistance was also compared. It is found that the sandwiched arrangement of chip provides better thermal performance compared to conventional in line chip arrangement.« less

Torque-Summing Brushless Motor

NASA Technical Reports Server (NTRS)

Vaidya, J. G.

1986-01-01

Torque channels function cooperatively but electrically independent for reliability. Brushless, electronically-commutated dc motor sums electromagnetic torques on four channels and applies them to single shaft. Motor operates with any combination of channels and continues if one or more of channels fail electrically. Motor employs single stator and rotor and mechanically simple; however, each of channels electrically isolated from other so that failure of one does not adversely affect others.

Test of ATLAS RPCs Front-End electronics

NASA Astrophysics Data System (ADS)

Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Stante, L.; Liberti, B.; Paoloni, A.; Pastori, E.; Santonico, R.

2003-08-01

The Front-End Electronics performing the ATLAS RPCs readout is a full custom 8 channels GaAs circuit, which integrates in a single die both the analog and digital signal processing. The die is bonded on the Front-End board which is completely closed inside the detector Faraday cage. About 50 000 FE boards are foreseen for the experiment. The complete functionality of the FE boards will be certificated before the detector assembly. We describe here the systematic test devoted to check the dynamic functionality of each single channel and the selection criteria applied. It measures and registers all relevant electronics parameters to build up a complete database for the experiment. The statistical results from more than 1100 channels are presented.

Dissociative electron attachment to DNA-diamine thin films: Impact of the DNA close environment on the OH{sup −} and O{sup −} decay channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boulanouar, Omar; Fromm, Michel; Mavon, Christophe

We measure the desorption of anions stimulated by the impact of 0–20 eV electrons on highly uniform thin films of plasmid DNA-diaminopropane. The results are accurately correlated with film thickness and composition by AFM and XPS measurements, respectively. Resonant structures in the H{sup −}, O{sup −}, and OH{sup −} yield functions are attributed to the decay of transient anions into the dissociative electron attachment (DEA) channel. The diamine induces ammonium-phosphate bridges along the DNA backbone, which suppresses the DEA O{sup −} channel and in counter-part increases considerably the desorption of OH{sup −}. The close environment of the phosphate groups maymore » therefore play an important role in modulating the rate and type of DNA damages induced by low energy electrons.« less

Radiation damage in MOS integrated circuits, Part 1

NASA Technical Reports Server (NTRS)

Danchenko, V.

1971-01-01

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Readout ASICs and Electronics for the 144-channel HAPDs for the Aerogel RICH at Belle II

NASA Astrophysics Data System (ADS)

Nishida, S.; Adachi, I.; Ikeda, H.; Hara, K.; Iijima, T.; Iwata, S.; Korpar, S.; Križan, P.; Kuroda, E.; Pestotnik, R.; Seljak, A.; Sumiyoshi, T.; Takagaki, H.

The particle identification (PID) device in the endcap of the Belle detector will be upgraded to a ring imaging Cherenkov counter (RICH) using aerogel as a radiator at the Belle II experiment. We develop the electronics to read out the 70,000 channels of hit information from the 144-channel hybrid avalanche photodetectors (HAPD), of the aerogel RICH detector. A readout ASIC is developed to digitize the HAPD signals, and was used in a beam test with the prototype detector. The performance and plan of the ASIC is reported in this study. We have also designed the readout electronics for the aerogel RICH, which consist of front-end boards with the ASICs merger boards to collect data from the front-end boards. A front-end board that fits in the actual available space for the aerogel RICH electronics was produced.

Multi-channel retarding field analyzer for EAST

NASA Astrophysics Data System (ADS)

M, HENKEL; D, HÖSCHEN; Y, LIANG; Y, LI; S, C. LIU; D, NICOLAI; N, SANDRI; G, SATHEESWARAN; N, YAN; H, X. ZHANG; the EAST, team2

2018-05-01

A multi-channel retarding field analyzer (MC-RFA) including two RFA modules and two Langmuir probes to measure the ion and electron temperature profiles within the scrape-off layer was developed for investigations of the interplay between magnetic topology and plasma transport at the plasma boundary. The MC-RFA probe for the stellarator W7-X and first measurements at the tokamak EAST was designed. The probe head allows simultaneous multi-channel ion temperature as well as for electron temperature measurements. The usability for radial correlation measurements of the measured ion currents is also given.

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

NASA Astrophysics Data System (ADS)

Shen, H.; Zhao, Q.; Zhang, F. S.; Sushko, Gennady B.; Korol, Andrei V.; Solov'yov, Andrey V.

2018-06-01

Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystal is simulated by means of the MBN EXPLORER software package. The results of simulations for a broad range of bending radii are analyzed in terms of the channel acceptance, dechanneling length, and spectral distribution of the emitted radiation. Comparison of the results with predictions of other theories as well as with the data for (1 1 0) oriented diamond, silicon and germanium crystals is carried out.

Investigation of the effect of scattering centers on low dimensional nanowire channel

NASA Astrophysics Data System (ADS)

Cariappa, K. S.; Shukla, Raja; Sarkar, Niladri

2018-05-01

In this work, we studied the effect of scattering centers on the electron density profiles of a one dimensional Nanowire channel. Density Matrix Formalism is used for calculating the local electron densities at room temperature. Various scattering centers have been simulated in the channel. The nearest neighbor tight binding method is applied to construct the Hamiltonian of nanoscale devices. We invoke scattering centers by adding local scattering potentials to the Hamiltonian. This analysis could give an insight into the understanding and utilization of defects for device engineering.

Scaling Projections for Sb-based p-channel FETs

DTIC Science & Technology

2010-01-01

the products of long-standing programs on antimonide growth by molecular beam epitaxy at the QinetiQ Corp. (for InSb) and at the Naval Research...electron mobilities in the channels of III–V HEMTs at room temperature are much higher than in Si or Ge, e.g., in InAs they are in the range of 20–30,000 cm2... HEMT structures. IEEE Trans Electron Dev 1985;32:11. [25] Awano Y, Kosugi M, Kosemura K, Mimura T, Abe M. Short-channel effects in subquarter

Ultra-High Gradient Channeling Acceleration in Nanostructures: Design/Progress of Proof-of-Concept (POC) Experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Young Min; Green, A.; Lumpkin, A. H.

2016-09-16

A short bunch of relativistic particles or a short-pulse laser perturbs the density state of conduction electrons in a solid crystal and excites wakefields along atomic lattices in a crystal. Under a coupling condition the wakes, if excited, can accelerate channeling particles with TeV/m acceleration gradients in principle since the density of charge carriers (conduction electrons) in solids n 0 = ~ 10 20 – 10 23 cm -3 is significantly higher than what can be obtained in gaseous plasma. Nanostructures have some advantages over crystals for channeling applications of high power beams. The dechanneling rate can be reduced andmore » the beam acceptance increased by the large size of the channels. For beam-driven acceleration, a bunch length with a sufficient charge density would need to be in the range of the plasma wavelength to properly excite plasma wakefields, and channeled particle acceleration with the wakefields must occur before the ions in the lattices move beyond the restoring threshold. In the case of the excitation by short laser pulses, the dephasing length is appreciably increased with the larger channel, which enables channeled particles to gain sufficient amounts of energy. This paper describes simulation analyses on beam- and laser (X-ray)-driven accelerations in effective nanotube models obtained from Vsim and EPOCH codes. Experimental setups to detect wakefields are also outlined with accelerator facilities at Fermilab and NIU. In the FAST facility, the electron beamline was successfully commissioned at 50 MeV and it is being upgraded toward higher energies for electron accelerator R&D. The 50 MeV injector beamline of the facility is used for X-ray crystal-channeling radiation with a diamond target. It has been proposed to utilize the same diamond crystal for a channeling acceleration POC test. Another POC experiment is also designed for the NIU accelerator lab with time-resolved electron diffraction. Recently, a stable generation of single-cycle laser pulses with tens of Petawatt power based on thin film compression (TFC) technique has been investigated for target normal sheath acceleration (TNSA) and radiation pressure acceleration (RPA). The experimental plan with a nanometer foil is discussed with an available test facility such as Extreme Light Infrastructure – Nuclear Physics (ELI-NP).« less

Laser-driven acceleration of electrons in a partially ionized plasma channel.

PubMed

Rowlands-Rees, T P; Kamperidis, C; Kneip, S; Gonsalves, A J; Mangles, S P D; Gallacher, J G; Brunetti, E; Ibbotson, T; Murphy, C D; Foster, P S; Streeter, M J V; Budde, F; Norreys, P A; Jaroszynski, D A; Krushelnick, K; Najmudin, Z; Hooker, S M

2008-03-14

The generation of quasimonoenergetic electron beams, with energies up to 200 MeV, by a laser-plasma accelerator driven in a hydrogen-filled capillary discharge waveguide is investigated. Injection and acceleration of electrons is found to depend sensitively on the delay between the onset of the discharge current and the arrival of the laser pulse. A comparison of spectroscopic and interferometric measurements suggests that injection is assisted by laser ionization of atoms or ions within the channel.

Electronic system

DOEpatents

Robison, G H; Dickson, J F

1960-11-15

An electronic system is designed for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. The system comprises separate input means electrically associated with the events under observation an electronic channel associated with each input means, including control means and indicating means; timing means adapted to apply a signal from the input means after a predetermined time to the control means to deactivate each of the channels; and means for resetting the system to its initial condition after the observation of each group of events. (D.L.C.)

MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits

DTIC Science & Technology

2009-12-17

MOSFET is limited by the thermal voltage kBT/q; it is greater than or equal to 60mV/dec at room temperature. Fig. 1.4 The potential barrier for...60mV/dec can be explained by the electron energy band profile of a MOSFET, which is shown in Fig. 1.4. As Vgs increases, the channel potential is...channel potential (φs) reduces the potential barrier for electron injection, and hence the electron energy (E) increases. According to the Boltzmann

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

NASA Astrophysics Data System (ADS)

Zhang, Hua; Zhou, Wenzhe; Liu, Qi; Yang, Zhixiong; Pan, Jiangling; Ouyang, Fangping; Xu, Hui

2017-09-01

Based on MoS2 nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS2 nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 104, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.

Never at rest: insights into the conformational dynamics of ion channels from cryo-electron microscopy.

PubMed

Lau, Carus; Hunter, Mark J; Stewart, Alastair; Perozo, Eduardo; Vandenberg, Jamie I

2018-04-01

The tightly regulated opening and closure of ion channels underlies the electrical signals that are vital for a wide range of physiological processes. Two decades ago the first atomic level view of ion channel structures led to a detailed understanding of ion selectivity and conduction. In recent years, spectacular developments in the field of cryo-electron microscopy have resulted in cryo-EM superseding crystallography as the technique of choice for determining near-atomic resolution structures of ion channels. Here, we will review the recent developments in cryo-EM and its specific application to the study of ion channel gating. We will highlight the advantages and disadvantages of the current technology and where the field is likely to head in the next few years. © 2018 The Authors. The Journal of Physiology © 2018 The Physiological Society.

Laser-driven relativistic electron dynamics in a cylindrical plasma channel

NASA Astrophysics Data System (ADS)

Geng, Pan-Fei; Lv, Wen-Juan; Li, Xiao-Liang; Tang, Rong-An; Xue, Ju-Kui

2018-03-01

The energy and trajectory of the electron, which is irradiated by a high-power laser pulse in a cylindrical plasma channel with a uniform positive charge and a uniform negative current, have been analyzed in terms of a single-electron model of direct laser acceleration. We find that the energy and trajectory of the electron strongly depend on the positive charge density, the negative current density, and the intensity of the laser pulse. The electron can be accelerated significantly only when the positive charge density, the negative current density, and the intensity of the laser pulse are in suitable ranges due to the dephasing rate between the wave and electron motion. Particularly, when their values satisfy a critical condition, the electron can stay in phase with the laser and gain the largest energy from the laser. With the enhancement of the electron energy, strong modulations of the relativistic factor cause a considerable enhancement of the electron transverse oscillations across the channel, which makes the electron trajectory become essentially three-dimensional, even if it is flat at the early stage of the acceleration. Project supported by the National Natural Science Foundation of China (Grant Nos. 11475027, 11765017, 11764039, 11305132, and 11274255), the Natural Science Foundation of Gansu Province, China (Grant No. 17JR5RA076), and the Scientific Research Project of Gansu Higher Education, China (Grant No. 2016A-005).

Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Turutanov, O. G.; Shnyrkov, V. I.

2016-07-01

A technically simple and physically clear method is suggested for direct measurement of the brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method was demonstrated with the pseudomorphic HEMT as a specimen. The optimal HEMT dc regime, from the point of view of the "back action" problem, was found to belong to the unsaturated area of the static characteristics possibly corresponding to the ballistic electron transport mode. The proposed method is believed to be a convenient tool to explore the ballistic transport, electron diffusion, 2DEG properties and other electrophysical processes in heterostructures.

Improvement in the cloud mask for Terra MODIS mitigated by electronic crosstalk correction in the 6.7 μm and 8.5 μm channels

NASA Astrophysics Data System (ADS)

Sun, Junqiang; Madhavan, S.; Wang, M.

2016-09-01

MODerate resolution Imaging Spectroradiometer (MODIS), a remarkable heritage sensor in the fleet of Earth Observing System for the National Aeronautics and Space Administration (NASA) is in space orbit on two spacecrafts. They are the Terra (T) and Aqua (A) platforms which tracks the Earth in the morning and afternoon orbits. T-MODIS has continued to operate over 15 years easily surpassing the 6 year design life time on orbit. Of the several science products derived from MODIS, one of the primary derivatives is the MODIS Cloud Mask (MOD035). The cloud mask algorithm incorporates several of the MODIS channels in both reflective and thermal infrared wavelengths to identify cloud pixels from clear sky. Two of the thermal infrared channels used in detecting clouds are the 6.7 μm and 8.5 μm. Based on a difference threshold with the 11 μm channel, the 6.7 μm channel helps in identifying thick high clouds while the 8.5 μm channel being useful for identifying thin clouds. Starting 2010, it had been observed in the cloud mask products that several pixels have been misclassified due to the change in the thermal band radiometry. The long-term radiometric changes in these thermal channels have been attributed to the electronic crosstalk contamination. In this paper, the improvement in cloud detection using the 6.7 μm and 8.5 μm channels are demonstrated using the electronic crosstalk correction. The electronic crosstalk phenomena analysis and characterization were developed using the regular moon observation of MODIS and reported in several works. The results presented in this paper should significantly help in improving the MOD035 product, maintaining the long term dataset from T-MODIS which is important for global change monitoring.

Formation, stability and dissociation dynamics of {{\\rm{N}}}_{2}{}^{{\\rm{n}}+} cations (n = 1 - 2) in 3.5 keV e - -N2 collisions studied using the energy resolved electron-ion coincidence technique

NASA Astrophysics Data System (ADS)

Kumar, S.; Prajapati, S.; Singh, B.; Singh, B. K.; Shanker, R.

2018-04-01

Coincidences between energy selected electrons and ions produced in the decay of a core hole ionized (excited) state in a free nitrogen molecule have been measured at three specified energies of emitted electrons to reveal the individual pathways produced in 3.5 keV electron-induced fragmentation processes. From these measurements, it has been possible to show, for the first time, that in addition to the normal Auger decay, the resonant Auger excitation channels also share their appreciable contributions in producing singly charged parent ions in an electron-induced collision system. The correlations between ion fragmentation products and electronic structures with a hole configuration in singly-, doubly- and possibly in triply charged molecular electronic states populated in the electronic decay of the initial core hole have been studied and discussed. KER values obtained from our experiments are found to be consistent with the previous results of photo absorption experiments for fragmentation channel {{{{N}}}2}2+ → N+ + N+ however, N2+ fragment ions are found to arise mainly from the fragmentation channel {{{{N}}}2}2+ → N2+ + N and to possess relatively low kinetic energies in the considered region of binding energies.

Spin-resolved electron waiting times in a quantum-dot spin valve

NASA Astrophysics Data System (ADS)

Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

2018-04-01

We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

Probing the electronic transport on the reconstructed Au/Ge(001) surface

PubMed Central

Krok, Franciszek; Kaspers, Mark R; Bernhart, Alexander M; Nikiel, Marek; Jany, Benedykt R; Indyka, Paulina; Wojtaszek, Mateusz; Möller, Rolf

2014-01-01

Summary By using scanning tunnelling potentiometry we characterized the lateral variation of the electrochemical potential µec on the gold-induced Ge(001)-c(8 × 2)-Au surface reconstruction while a lateral current flows through the sample. On the reconstruction and across domain boundaries we find that µec shows a constant gradient as a function of the position between the contacts. In addition, nanoscale Au clusters on the surface do not show an electronic coupling to the gold-induced surface reconstruction. In combination with high resolution scanning electron microscopy and transmission electron microscopy, we conclude that an additional transport channel buried about 2 nm underneath the surface represents a major transport channel for electrons. PMID:25247129

Laser beam coupling with capillary discharge plasma for laser wakefield acceleration applications

NASA Astrophysics Data System (ADS)

Bagdasarov, G. A.; Sasorov, P. V.; Gasilov, V. A.; Boldarev, A. S.; Olkhovskaya, O. G.; Benedetti, C.; Bulanov, S. S.; Gonsalves, A.; Mao, H.-S.; Schroeder, C. B.; van Tilborg, J.; Esarey, E.; Leemans, W. P.; Levato, T.; Margarone, D.; Korn, G.

2017-08-01

One of the most robust methods, demonstrated to date, of accelerating electron beams by laser-plasma sources is the utilization of plasma channels generated by the capillary discharges. Although the spatial structure of the installation is simple in principle, there may be some important effects caused by the open ends of the capillary, by the supplying channels etc., which require a detailed 3D modeling of the processes. In the present work, such simulations are performed using the code MARPLE. First, the process of capillary filling with cold hydrogen before the discharge is fired, through the side supply channels is simulated. Second, the simulation of the capillary discharge is performed with the goal to obtain a time-dependent spatial distribution of the electron density near the open ends of the capillary as well as inside the capillary. Finally, to evaluate the effectiveness of the beam coupling with the channeling plasma wave guide and of the electron acceleration, modeling of the laser-plasma interaction was performed with the code INF&RNO.

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.

2003-01-01

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Multi-channel electronically scanned cryogenic pressure sensor

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Kruse, Nancy M. H. (Inventor)

1995-01-01

A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multielement array. These dies are bonded at specific sites on a glass, prepatterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

Electromagnetic Model Of A Lightning Dart Leader In The Earth Atmosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gordeev, A. V.; Losseva, T. V.

2006-01-15

The fundamentally new approach to the lightning step and dart leaders structure model is suggested, which shows a possibility of the drift propagation for the electrons in a plasma channel. Appearance of the strong Hall electric field in the current channel by the account of the magnetic field can result in the generation of the relativistic drifting electrons to be held in the channel due to the magnetic self-insulation effect. The range of the measured x-ray emission from the lightning channel 30-250 keV, which corresponds to the measured current value 4-11 kA, is in a reasonably good agreement with themore » estimates made in the framework of presented model.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strumia, Federica

The subject of this thesis is the search for first-generation scalar and vector leptoquarks produced in pairs in proton-antiproton collisions at a center-of-mass energy of 1.8 TeV and disintegrating in the channels "evjj" and " Eejj ". The analysis was carried out on the data collected by the CDF experiment during the period 1992-1995. The signature of the events sought is as follows: one energetic electron, two high-energy hadronic jets and transverse energy missing in channel "evjj" and two high-energy electrons, as well as two high-energy jets In the channel "eejj". No evidence of the signal is found. For eachmore » disintegration channel and for their combination, the lower limits on the leptoquarks mass were therefore determined at a confidence level of 95%« less

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Strain-induced phase transformation at the surface of an AISI-304 stainless steel irradiated to 4.4 dpa and deformed to 0.8% strain

NASA Astrophysics Data System (ADS)

Gussev, M. N.; Field, K. G.; Busby, J. T.

2014-03-01

Surface relief due to localized deformation in a 4.4-dpa neutron-irradiated AISI 304 stainless steel was investigated using scanning electron microscopy coupled with electron backscattering diffraction and scanning transmission electron microscopy. It was found a body-centered-cubic (BCC) phase (deformation-induced martensite) had formed at the surface of the deformed specimen along the steps generated from dislocation channels. Martensitic hill-like formations with widths of ˜1 μm and depths of several microns were observed at channels with heights greater than ˜150 nm above the original surface. Martensite at dislocation channels was observed in grains along the [0 0 1]-[1 1 1] orientation but not in those along the [1 0 1] orientation.

Heterocyclic Acene-Diketopyrrolopyrrole Molecular Semiconductors for Efficient Solution-Processed Organic Solar Cells

NASA Astrophysics Data System (ADS)

Loser, Stephen C.

(Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to their wide bandgaps. Both metal- and N-polar AlGaN/GaN high-electron-mobility transistors (HEMTs) demonstrated excellent performances as high-frequency signal amplifiers. While the majority of today's III-N transistors are based on metal-polar heterostructures, N-polar materials have gained attention following the breakthrough in the deposition of high quality films. Compared to their metal-polar counterparts, N-polar HEMT structures improve the scalability of devices, increase the electron confinement and reduce contact resistance, exhibiting great potentials in high-frequency device fabrications. In order to suppress alloy scattering in the HEMT structures, a thin AlN interlayer is usually introduced between the AlGaN barrier and the GaN channel. However, a significant amount of unintentional Ga incorporation was observed in AlN films grown by metal-organic chemical vapor deposition (MOCVD), one of the major techniques to produce the HEMT epi structures. In the first part of my thesis, the impact of impure AlN interlayers on HEMTs was examined, explaining the significant improvement in electron mobility despite of the high Ga concentration of ˜ 50%. Moreover, both metal-polar and N-polar AlN films grown by MOCVD under various conditions were investigated, the results of which indicated that the major source of unintentional Ga was the former Ga deposition on the susceptor in the same run. It was also observed that N-polar AlN films contained less Ga compared to metal-polar ones when they were grown under same conditions. Methods to suppress the Ga were also discussed. In addition, the morphological and electrical properties of the GaN/AlN/GaN heterostructures with AlN films grown under different conditions were analyzed by atomic force microscopy (AFM) and room temperature Van der Pauw hall measurement. Following the study of AlN interlayers in the HEMT structures, the development of N-polar HEMT epitaxial structures with highly-scaled channel thicknesses was discussed in detail. Small channel thickness is critical to prevent short channel effects when scaling down the lateral size of N-polar HEMT devices. By modifying the Si doping level in the back-barrier and the Al composition of the AlGaN cap, the channel thickness of the conventional N-polar HEMT structure with pure GaN channel was successfully scaled down to 8 nm. To further reduce the channel thickness, a thin InGaN layer was introduced between the channel and the AlGaN cap, leading to a decrease of the electric field in the channel and an increase of the distance between the centroid of the 2DEG and the AlN/GaN interface, which suppressed the scattering at the interface and significantly improved the electron mobility. The sheet charge density also increased due to the net positive polarization charge at the GaN/InGaN interface. The design was demonstrated by MOCVD. An increase of 73% in electron mobility from 606 to 1141 cm2/(V˙s) was observed when the 6 nm thick pure GaN channel was replaced by a 4 nm GaN / 2 nm In0.1Ga0.9N composite channel. The smallest applicable channel thickness was decreased to 4 nm with the composite channel design.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE PAGES

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; ...

2018-06-04

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regionsmore » in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.« less

The plasma electrolytic oxidation micro-discharge channel model and its microstructure characteristic based on Ti tracer

NASA Astrophysics Data System (ADS)

Gao, Fangyuan; Hao, Li; Li, Guang; Xia, Yuan

2018-02-01

This study focuses on the individual discharge channel of ceramic coating prepared by plasma electrolytic oxidation (PEO), and attempts to reveal the mechanism of breakdown discharge at low voltage. Titanium (Ti) was employed as a substrate with the layer of aluminum deposited on it (aluminized Ti). The shape and microstructure of the discharge channels in PEO coatings were investigated using transmission electron microscope (TEM) and scanning electron microscopy (SEM). A schematic model of the individual discharge channel was proposed based on Ti tracer method. The shape of the discharge channel was mainly cylinder-shaped in the compact coating, with a groove-like oxidation region existed at the coating/substrate interface. In the groove-like oxidation region, the phase composition mainly composed of amorphous and mixed polycrystalline (aluminum titanate and mullite). β-Al2O3 was found in the ceramic coating. TEM morphology showed that nanometer sized micro channels existed in the ceramic coatings.

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

The theoretical simulation on electrostatic distribution of 1st proximity region in proximity focusing low-light-level image intensifier

NASA Astrophysics Data System (ADS)

Zhang, Liandong; Bai, Xiaofeng; Song, De; Fu, Shencheng; Li, Ye; Duanmu, Qingduo

2015-03-01

Low-light-level night vision technology is magnifying low light level signal large enough to be seen by naked eye, which uses the photons - photoelectron as information carrier. Until the micro-channel plate was invented, it has been possibility for the realization of high performance and miniaturization of low-light-level night vision device. The device is double-proximity focusing low-light-level image intensifier which places a micro-channel plate close to photocathode and phosphor screen. The advantages of proximity focusing low-light-level night vision are small size, light weight, small power consumption, no distortion, fast response speed, wide dynamic range and so on. It is placed parallel to each other for Micro-channel plate (both sides of it with metal electrode), the photocathode and the phosphor screen are placed parallel to each other. The voltage is applied between photocathode and the input of micro-channel plate when image intensifier works. The emission electron excited by photo on the photocathode move towards to micro-channel plate under the electric field in 1st proximity focusing region, and then it is multiplied through the micro-channel. The movement locus of emission electrons can be calculated and simulated when the distributions of electrostatic field equipotential lines are determined in the 1st proximity focusing region. Furthermore the resolution of image tube can be determined. However the distributions of electrostatic fields and equipotential lines are complex due to a lot of micro-channel existing in the micro channel plate. This paper simulates electrostatic distribution of 1st proximity region in double-proximity focusing low-light-level image intensifier with the finite element simulation analysis software Ansoft maxwell 3D. The electrostatic field distributions of 1st proximity region are compared when the micro-channel plates' pore size, spacing and inclination angle ranged. We believe that the electron beam movement trajectory in 1st proximity region will be better simulated when the electronic electrostatic fields are simulated.

A 128-channel picoammeter system and its application on charged particle beam current distribution measurements.

PubMed

Yu, Deyang; Liu, Junliang; Xue, Yingli; Zhang, Mingwu; Cai, Xiaohong; Hu, Jianjun; Dong, Jinmei; Li, Xin

2015-11-01

A 128-channel picoammeter system is constructed based on instrumentation amplifiers. Taking advantage of a high electric potential and narrow bandwidth in DC energetic charged beam measurements, a current resolution better than 5 fA can be achieved. Two sets of 128-channel strip electrodes are implemented on printed circuit boards and are employed for ion and electron beam current distribution measurements. Tests with 60 keV O(3+) ions and 2 keV electrons show that it can provide exact boundaries when a positive charged particle beam current distribution is measured.

Structure of a CLC chloride ion channel by cryo-electron microscopy

PubMed Central

Park, Eunyong; Campbell, Ernest B.; MacKinnon, Roderick

2017-01-01

CLC proteins transport chloride (Cl−) ions across cellular membranes to regulate muscle excitability, electrolyte movement across epithelia, and acidification of intracellular organelles. Some CLC proteins are channels that conduct Cl− ions passively, whereas others are secondary active transporters that exchange two Cl− ions for one H+. The structural basis underlying these distinctive transport mechanisms is puzzling because CLC channels and transporters are expected to share the same architecture based on sequence homology. To solve this puzzle we determined the structure of a mammalian CLC channel (CLC-K) using cryo-electron microscopy. A conserved loop in the Cl− transport pathway shows a structure markedly different from that of CLC transporters. Consequently, the cytosolic constriction for Cl− passage is widened in CLC-K such that the kinetic barrier previously postulated for Cl−/H+ transporter function would be reduced. Thus, reduction of a kinetic barrier in CLC channels enables fast flow of Cl− down its electrochemical gradient. PMID:28002411

Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

NASA Astrophysics Data System (ADS)

Pokatilov, E. P.; Nika, D. L.; Zincenco, N. D.; Balandin, A. A.

2007-12-01

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or InxGa1-xN channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices.

Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

NASA Astrophysics Data System (ADS)

She, Xiao-Jian; Liu, Jie; Zhang, Jing-Yu; Gao, Xu; Wang, Sui-Dong

2013-09-01

Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel.

Centimetre-scale electron diffusion in photoactive organic heterostructures

NASA Astrophysics Data System (ADS)

Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

2018-02-01

The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

Dissociative electron attachment to the radiosensitizing chemotherapeutic agent hydroxyurea

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huber, S. E.; Tanzer, K.; Denifl, S.

Dissociative electron attachment to hydroxyurea was studied in the gas phase for electron energies ranging from zero to 9 eV in order to probe its radiosensitizing capabilities. The experiments were carried out using a hemispherical electron monochromator coupled with a quadrupole mass spectrometer. Diversified fragmentation of hydroxyurea was observed upon low energy electron attachment and here we highlight the major dissociation channels. Moreover, thermodynamic thresholds for various fragmentation reactions are reported to support the discussion of the experimental findings. The dominant dissociation channel, which was observed over a broad range of energies, is associated with formation of NCO{sup −}, water,more » and the amidogen (NH{sub 2}) radical. The second and third most dominant dissociation channels are associated with formation of NCNH{sup −} and NHCONH{sub 2}{sup −}, respectively, which are both directly related to formation of the highly reactive hydroxyl radical. Other ions observed with significant abundance in the mass spectra were NH{sub 2}{sup −}/O{sup −}, OH{sup −}, CN{sup −}, HNOH{sup −}, NCONH{sub 2}{sup −}, and ONHCONH{sub 2}{sup −}.« less

Space charge neutralization by electron-transparent suspended graphene

PubMed Central

Srisonphan, Siwapon; Kim, Myungji; Kim, Hong Koo

2014-01-01

Graphene possesses many fascinating properties originating from the manifold potential for interactions at electronic, atomic, or molecular levels. Here we report measurement of electron transparency and hole charge induction response of a suspended graphene anode on top of a void channel formed in a SiO2/Si substrate. A two-dimensional (2D) electron gas induced at the oxide interface emits into air and makes a ballistic transport toward the suspended graphene. A small fraction (>~0.1%) of impinging electrons are captured at the edge of 2D hole system in graphene, demonstrating good transparency to very low energy (<3 eV) electrons. The hole charges induced in the suspended graphene anode have the effect of neutralizing the electron space charge in the void channel. This charge compensation dramatically enhances 2D electron gas emission at cathode to the level far surpassing the Child-Langmuir's space-charge-limited emission. PMID:24441774

Dynamics of dissociative electron attachment to ammonia

DOE PAGES

Rescigno, T. N.; Trevisan, C. S.; Orel, A. E.; ...

2016-05-12

We present that ab initio theoretical studies and momentum-imaging experiments are combined to provide a consistent picture of the dynamics of dissociative electron attachment to ammonia through its 5.5- and 10.5-eV resonance channels. The present study clarifies the character and symmetry of the anion states involved and the dynamics that leads to the observed fragment-ion channels, their branching ratios, and angular distributions.

Dynamics of dissociative electron attachment to ammonia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rescigno, T. N.; Trevisan, C. S.; Orel, A. E.

We present that ab initio theoretical studies and momentum-imaging experiments are combined to provide a consistent picture of the dynamics of dissociative electron attachment to ammonia through its 5.5- and 10.5-eV resonance channels. The present study clarifies the character and symmetry of the anion states involved and the dynamics that leads to the observed fragment-ion channels, their branching ratios, and angular distributions.

Multi-Channel Electronically Scanned Cryogenic Pressure Sensor And Method For Making Same

NASA Technical Reports Server (NTRS)

Chapman, John J. (Inventor); Hopson, Purnell, Jr. (Inventor); Holloway, Nancy M. (Inventor)

2001-01-01

A miniature, multi-channel, electronically scanned pressure measuring device uses electrostatically bonded silicon dies in a multi-element array. These dies are bonded at specific sites on a glass, pre-patterned substrate. Thermal data is multiplexed and recorded on each individual pressure measuring diaphragm. The device functions in a cryogenic environment without the need of heaters to keep the sensor at constant temperatures.

Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

DOE PAGES

Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

2016-10-05

Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results aremore » in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.« less

MEDUSA-32: A low noise, low power silicon strip detector front-end electronics, for space applications

NASA Astrophysics Data System (ADS)

Cicuttin, Andres; Colavita, Alberto; Cerdeira, Alberto; Fratnik, Fabio; Vacchi, Andrea

1997-02-01

In this report we describe a mixed analog-digital integrated circuit (IC) designed as the front-end electronics for silicon strip-detectors for space applications. In space power consumption, compactness and robustness become critical constraints for a pre-amplifier design. The IC is a prototype with 32 complete channels, and it is intended for a large area particle tracker of a new generation of gamma ray telescopes. Each channel contains a charge sensitive amplifier, a pulse shaper, a discriminator and two digital buffers. The reference trip point of the discriminator is adjustable. This chip also has a custom PMOSFET transistor per channel, included in order to provide the high dynamic resistance needed to reverse-bias the strip diode. The digital part of the chip is used to store and serially shift out the state of the channels. There is also a storage buffer that allows the disabling of non-functioning channels if it is required by the data acquisition system. An input capacitance of 30 pF introduced at the input of the front-end produces less than 1000 electrons of RMS equivalent noise charge (ENC), for a total power dissipation of only 60 μW per channel. The chip was made using Orbit's 1.2 μm double poly, double metal n-well low noise CMOS process. The dimensions of the IC are 2400 μm × 8840 μm.

Electron energy boosting in laser-wake-field acceleration with external magnetic field Bapprox1 T and laser prepulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosokai, Tomonao; Zhidkov, Alexei; Yamazaki, Atsushi

2010-03-22

Hundred-mega-electron-volt electron beams with quasi-monoenergetic distribution, and a transverse geometrical emittance as small as approx0.02 pi mm mrad are generated by low power (7 TW, 45 fs) laser pulses tightly focused in helium gas jets in an external static magnetic field, Bapprox1 T. Generation of monoenergetic beams strongly correlates with appearance of a straight, at least 2 mm length plasma channel in a short time before the main laser pulse and with the energy of copropagating picosecond pedestal pulses (PPP). For a moderate energy PPP, the multiple or staged electron self-injection in the channel gives several narrow peaks in themore » electron energy distribution.« less

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

NASA Astrophysics Data System (ADS)

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; Kursumovic, Ahmed; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus-Driscoll, Judith L.

2016-08-01

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~1012 inch-2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Non-linear theory of a cavitated plasma wake in a plasma channel for special applications and control

NASA Astrophysics Data System (ADS)

Thomas, Johannes; Kostyukov, Igor Yu.; Pronold, Jari; Golovanov, Anton; Pukhov, Alexander

2016-05-01

We introduce a complete semi-analytical model for a cavitated electron wake driven by an electron beam in a radially inhomogeneous plasma. The electron response to the driver, dynamics of electrons in a thin sheath surrounding the cavity, as well as accelerating and focusing fields inside the cavity are calculated in the quasistatic approximation. Our theory holds for arbitrary radial density profiles and reduces to known models in the limit of a homogeneous plasma. A free-propagating blow-out in an evacuated channel experiences longitudinal squeezing, qualitatively the same as observed in particle-in-cell simulations for the laser pulse-driven case [Pukhov et al., Phys. Rev. Lett. 113, 245003 (2014)]. Our model also permits qualitative interpretation of the earlier observed cancellation of the focusing gradient in the cavity [Pukhov et al., Phys. Rev. Lett. 113, 245003 (2014)]. In this work, we show the underlying mechanism that causes the radial fields in the vacuum part of a channel to become defocussing.

The effects of temperature and magnetic flux on electron transport through a four-channel DNA model

NASA Astrophysics Data System (ADS)

Lee, Sunhee; Hedin, Eric; Joe, Yong

2010-03-01

The temperature dependence of the conductivity of lambda phage DNA has been measured by Tran et al [1] experimentally, where the conductivity displayed strong (weak) temperature dependence above (below) a threshold temperature. In order to understand the temperature effects of electron transport theoretically, we study a two-dimensional and four-channel DNA model using a tight-binding (TB) Hamiltonian. The thermal effects within a TB model are incorporated into the hopping integral and the relative twist angle from its equilibrium value between base-pairs. Since these thermal structural fluctuations localize the electronic wave functions in DNA, we examine a temperature-dependent localization length, a temperature-driven transmission, and current-voltage characteristics in this system. In addition, we incorporate magnetic field effects into the analysis of the transmission through DNA in order to modulate the quantum interference between the electron paths that comprise the 4-channel structure. [1] P. Tran, B. Alavi, and G. Gruner, PRL 85, 1564 (2000).

Active parallel redundancy for electronic integrator-type control circuits

NASA Technical Reports Server (NTRS)

Peterson, R. A.

1971-01-01

Circuit extends concept of redundant feedback control from type-0 to type-1 control systems. Inactive channels are slaves to the active channel, if latter fails, it is rejected and slave channel is activated. High reliability and elimination of single-component catastrophic failure are important in closed-loop control systems.

Measurement of turbulent electron temperature fluctuations on the ASDEX Upgrade tokamak using correlated electron cyclotron emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freethy, S. J., E-mail: simon.freethy@ipp.mpg.de; Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139; Conway, G. D.

2016-11-15

Turbulent temperature fluctuations are measured on the ASDEX Upgrade tokamak using pairs of closely spaced, narrow-band heterodyne radiometer channels and a standard correlation technique. The pre-detection spacing and bandwidth of the radiometer channel pairs is chosen such that they are physically separated less than a turbulent correlation length, but do not overlap. The radiometer has 4 fixed filter frequency channels and two tunable filter channels for added flexibility in the measurement position. Relative temperature fluctuation amplitudes are observed in a helium plasma to be δT/T = (0.76 ± 0.02)%, (0.67 ± 0.02)%, and (0.59 ± 0.03)% at normalised toroidal fluxmore » radius of ρ{sub tor} = 0.82, 0.75, and 0.68, respectively.« less

High Frequency Design Considerations for the Large Detector Number and Small Form Factor Dual Electron Spectrometer of the Fast Plasma Investigation on NASA's Magnetospheric Multiscale Mission

NASA Technical Reports Server (NTRS)

Kujawski, Joseph T.; Gliese, Ulrik B.; Cao, N. T.; Zeuch, M. A.; White, D.; Chornay, D. J; Lobell, J. V.; Avanov, L. A.; Barrie, A. C.; Mariano, A. J.;

Relativistic laser channeling in plasmas for fast ignition

NASA Astrophysics Data System (ADS)

Lei, A. L.; Pukhov, A.; Kodama, R.; Yabuuchi, T.; Adumi, K.; Endo, K.; Freeman, R. R.; Habara, H.; Kitagawa, Y.; Kondo, K.; Kumar, G. R.; Matsuoka, T.; Mima, K.; Nagatomo, H.; Norimatsu, T.; Shorokhov, O.; Snavely, R.; Yang, X. Q.; Zheng, J.; Tanaka, K. A.

2007-12-01

We report an experimental observation suggesting plasma channel formation by focusing a relativistic laser pulse into a long-scale-length preformed plasma. The channel direction coincides with the laser axis. Laser light transmittance measurement indicates laser channeling into the high-density plasma with relativistic self-focusing. A three-dimensional particle-in-cell simulation reproduces the plasma channel and reveals that the collimated hot-electron beam is generated along the laser axis in the laser channeling. These findings hold the promising possibility of fast heating a dense fuel plasma with a relativistic laser pulse.

Laser-driven electron acceleration in a plasma channel with an additional electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Li-Hong; Xue, Ju-Kui, E-mail: xuejk@nwnu.edu.cn; Liu, Jie, E-mail: liu-jie@iapcm.ac.cn

2016-05-15

We examine the electron acceleration in a two-dimensional plasma channel under the action of a laser field and an additional static electric field. We propose to design an appropriate additional electric field (its direction and location), in order to launch the electron onto an energetic trajectory. We find that the electron acceleration strongly depends on the coupled effects of the laser polarization, the direction, and location of the additional electric field. The additional electric field affects the electron dynamics by changing the dephasing rate. Particularly, a suitably designed additional electric field leads to a considerable energy gain from the lasermore » pulse after the interaction with the additional electric field. The electron energy gain from the laser with the additional electric field can be much higher than that without the additional electric field. This engineering provides a possible means for producing high energetic electrons.« less

An integrated analog O/E/O link for multi-channel laser neurons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nahmias, Mitchell A., E-mail: mnahmias@princeton.edu; Tait, Alexander N.; Tolias, Leonidas

2016-04-11

We demonstrate an analog O/E/O electronic link to allow integrated laser neurons to accept many distinguishable, high bandwidth input signals simultaneously. This device utilizes wavelength division multiplexing to achieve multi-channel fan-in, a photodetector to sum signals together, and a laser cavity to perform a nonlinear operation. Its speed outpaces accelerated-time neuromorphic electronics, and it represents a viable direction towards scalable networking approaches.

Comparative Response of Microchannel Plate and Channel Electron Multiplier Detectors to Penetrating Radiation in Space

DOE PAGES

Funsten, Herbert O.; Harper, Ronnie W.; Dors, Eric E.; ...

2015-10-02

Channel electron multiplier (CEM) and microchannel plate (MCP) detectors are routinely used in space instrumentation for measurement of space plasmas. Here, our goal is to understand the relative sensitivities of these detectors to penetrating radiation in space, which can generate background counts and shorten detector lifetime. We use 662 keV γ-rays as a proxy for penetrating radiation such as γ-rays, cosmic rays, and high-energy electrons and protons that are ubiquitous in the space environment. We find that MCP detectors are ~20 times more sensitive to 662 keV γ-rays than CEM detectors. This is attributed to the larger total area ofmore » multiplication channels in an MCP detector that is sensitive to electronic excitation and ionization resulting from the interaction of penetrating radiation with the detector material. In contrast to the CEM detector, whose quantum efficiency ε γ for 662 keVγ -rays is found to be 0.00175 and largely independent of detector bias, the quantum efficiency of the MCP detector is strongly dependent on the detector bias, with a power law index of 5.5. Lastly, background counts in MCP detectors from penetrating radiation can be reduced using MCP geometries with higher pitch and smaller channel diameter.« less

Electron dynamics in Hall thruster

NASA Astrophysics Data System (ADS)

Marini, Samuel; Pakter, Renato

2015-11-01

Hall thrusters are plasma engines those use an electromagnetic fields combination to confine electrons, generate and accelerate ions. Widely used by aerospace industries those thrusters stand out for its simple geometry, high specific impulse and low demand for electric power. Propulsion generated by those systems is due to acceleration of ions produced in an acceleration channel. The ions are generated by collision of electrons with propellant gas atoms. In this context, we can realize how important is characterizing the electronic dynamics. Using Hamiltonian formalism, we derive the electron motion equation in a simplified electromagnetic fields configuration observed in hall thrusters. We found conditions those must be satisfied by electromagnetic fields to have electronic confinement in acceleration channel. We present configurations of electromagnetic fields those maximize propellant gas ionization and thus make propulsion more efficient. This work was supported by CNPq.

In-membrane micro fuel cell

DOEpatents

Omosebi, Ayokunle; Besser, Ronald

2016-09-06

An in-membrane micro fuel cell comprises an electrically-insulating membrane that is permissive to the flow of cations, such as protons, and a pair of electrodes deposited on channels formed in the membrane. The channels are arranged as conduits for fluids, and define a membrane ridge between the channels. The electrodes are porous and include catalysts for promoting the liberation of a proton and an electron from a chemical species and/or or the recombination of a proton and an electron with a chemical specie. The fuel cell may be provided a biosensor, an electrochemical sensor, a microfluidic device, or other microscale devices fabricated in the fuel cell membrane.

Microwave processes in the SPD-ATON stationary plasma thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirdyashev, K. P., E-mail: kpk@ms.ire.rssi.ru

2016-09-15

Results of experimental studies of microwave processes accompanying plasma acceleration in the SPD-ATON stationary plasma thruster are presented. Specific features of the generation of microwave oscillations in both the acceleration channel and the plasma flow outgoing from the thruster are analyzed on the basis of local measurements of the spectra of the plasma wave fields. Mechanisms for generation of microwave oscillations are considered with allowance for the inhomogeneity of the electron density and magnetic field behind the edge of the acceleration channel. The effect of microwave oscillations on the electron transport and the formation of the discharge current in themore » acceleration channel is discussed.« less

Triple differential study of ionization of H2 by proton impact for varying electron ejection geometries

NASA Astrophysics Data System (ADS)

Hasan, A.; Sharma, S.; Arthanayaka, T. P.; Lamichhane, B. R.; Remolina, J.; Akula, S.; Madison, D. H.; Schulz, M.

2014-11-01

We have performed a kinematically complete experiment on ionization of H2 by 75 keV proton impact. The triple differential cross sections (TDCS) extracted from the measurement were compared to a molecular 3-body distorted wave (M3DW) calculation for three different electron ejection geometries. Overall, the agreement between experiment and theory is better than in the case of a helium target for the same projectile. Nevertheless, significant quantitative discrepancies remain, which probably result from the capture channel, which may be strongly coupled to the ionization channel. Therefore, improved agreement could be expected from a non-perturbative coupled-channel approach.

Tunable polarization plasma channel undulator for narrow bandwidth photon emission

DOE PAGES

Rykovanov, S. G.; Wang, J. W.; Kharin, V. Yu.; ...

2016-09-09

The theory of a plasma undulator excited by a short intense laser pulse in a parabolic plasma channel is presented. The undulator fields are generated either by the laser pulse incident off-axis and/or under the angle with respect to the channel axis. Linear plasma theory is used to derive the wakefield structure. It is shown that the electrons injected into the plasma wakefields experience betatron motion and undulator oscillations. Optimal electron beam injection conditions are derived for minimizing the amplitude of the betatron motion, producing narrow-bandwidth undulator radiation. Polarization control is readily achieved by varying the laser pulse injection conditions.

24-channel dual microcontroller-based voltage controller for ion optics remote control

NASA Astrophysics Data System (ADS)

Bengtsson, L.

2018-05-01

The design of a 24-channel voltage control instrument for Wenzel Elektronik N1130 NIM modules is described. This instrument is remote controlled from a LabVIEW GUI on a host Windows computer and is intended for ion optics control in electron affinity measurements on negative ions at the CERN-ISOLDE facility. Each channel has a resolution of 12 bits and has a normally distributed noise with a standard deviation of <1 mV. The instrument is designed as a standard 2-unit NIM module where the electronic hardware consists of a printed circuit board with two asynchronously operating microcontrollers.

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

NASA Astrophysics Data System (ADS)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Dissociation of protonated N-(3-phenyl-2H-chromen-2-ylidene)-benzenesulfonamide in the gas phase: cyclization via sulfonyl cation transfer.

PubMed

Wang, Shanshan; Dong, Cheng; Yu, Lian; Guo, Cheng; Jiang, Kezhi

2016-01-15

In the tandem mass spectrometry of protonated N-(3-phenyl-2H-chromen-2-ylidene)benzenesulfonamides, the precursor ions have been observed to undergo gas-phase dissociation via two competing channels: (a) the predominant channel involves migration of the sulfonyl cation to the phenyl C atom and the subsequent loss of benzenesulfinic acid along with cyclization reaction, and (b) the minor one involves dissociation of the precursor ion to give an ion/neutral complex of [sulfonyl cation/imine], followed by decomposition to afford sulfonyl cation or the INC-mediated electron transfer to give an imine radical cation. The proposed reaction channels have been supported by theoretical calculations and D-labeling experiments. The gas-phase cyclization reaction originating from the N- to C-sulfonyl cation transfer has been first reported to the best of our knowledge. For the substituted sulfonamides, the presence of electron-donating groups (R(2) -) at the C-ring effectively facilitates the reaction channel of cyclization reaction, whereas that of electron-withdrawing groups inhibits this pathway. Copyright © 2015 John Wiley & Sons, Ltd.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

The voltage dependence of NADPH oxidase reveals why phagocytes need proton channels

NASA Astrophysics Data System (ADS)

DeCoursey, Thomas E.; Morgan, Deri; Cherny, Vladimir V.

2003-04-01

The enzyme NADPH oxidase in phagocytes is important in the body's defence against microbes: it produces superoxide anions (O2-, precursors to bactericidal reactive oxygen species). Electrons move from intracellular NADPH, across a chain comprising FAD (flavin adenine dinucleotide) and two haems, to reduce extracellular O2 to O2-. NADPH oxidase is electrogenic, generating electron current (Ie) that is measurable under voltage-clamp conditions. Here we report the complete current-voltage relationship of NADPH oxidase, the first such measurement of a plasma membrane electron transporter. We find that Ie is voltage-independent from -100mV to >0mV, but is steeply inhibited by further depolarization, and is abolished at about +190mV. It was proposed that H+ efflux mediated by voltage-gated proton channels compensates Ie, because Zn2+ and Cd2+ inhibit both H+ currents and O2- production. Here we show that COS-7 cells transfected with four NADPH oxidase components, but lacking H+ channels, produce O2- in the presence of Zn2+ concentrations that inhibit O2- production in neutrophils and eosinophils. Zn2+ does not inhibit NADPH oxidase directly, but through effects on H+ channels. H+ channels optimize NADPH oxidase function by preventing membrane depolarization to inhibitory voltages.

Laser-Driven Ion Acceleration from Plasma Micro-Channel Targets

PubMed Central

Zou, D. B.; Pukhov, A.; Yi, L. Q.; Zhou, H. B.; Yu, T. P.; Yin, Y.; Shao, F. Q.

2017-01-01

Efficient energy boost of the laser-accelerated ions is critical for their applications in biomedical and hadron research. Achiev-able energies continue to rise, with currently highest energies, allowing access to medical therapy energy windows. Here, a new regime of simultaneous acceleration of ~100 MeV protons and multi-100 MeV carbon-ions from plasma micro-channel targets is proposed by using a ~1020 W/cm2 modest intensity laser pulse. It is found that two trains of overdense electron bunches are dragged out from the micro-channel and effectively accelerated by the longitudinal electric-field excited in the plasma channel. With the optimized channel size, these “superponderomotive” energetic electrons can be focused on the front surface of the attached plastic substrate. The much intense sheath electric-field is formed on the rear side, leading to up to ~10-fold ionic energy increase compared to the simple planar geometry. The analytical prediction of the optimal channel size and ion maximum energies is derived, which shows good agreement with the particle-in-cell simulations. PMID:28218247

Structure of the TRPV1 ion channel determined by electron cryo-microscopy.

PubMed

Liao, Maofu; Cao, Erhu; Julius, David; Cheng, Yifan

2013-12-05

Transient receptor potential (TRP) channels are sensors for a wide range of cellular and environmental signals, but elucidating how these channels respond to physical and chemical stimuli has been hampered by a lack of detailed structural information. Here we exploit advances in electron cryo-microscopy to determine the structure of a mammalian TRP channel, TRPV1, at 3.4 Å resolution, breaking the side-chain resolution barrier for membrane proteins without crystallization. Like voltage-gated channels, TRPV1 exhibits four-fold symmetry around a central ion pathway formed by transmembrane segments 5-6 (S5-S6) and the intervening pore loop, which is flanked by S1-S4 voltage-sensor-like domains. TRPV1 has a wide extracellular 'mouth' with a short selectivity filter. The conserved 'TRP domain' interacts with the S4-S5 linker, consistent with its contribution to allosteric modulation. Subunit organization is facilitated by interactions among cytoplasmic domains, including amino-terminal ankyrin repeats. These observations provide a structural blueprint for understanding unique aspects of TRP channel function.

Orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films

DOE PAGES

Zhu, L. J.; Nie, S. H.; Xiong, P.; ...

2016-02-24

The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic-more » to square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

Laser-Driven Ion Acceleration from Plasma Micro-Channel Targets

NASA Astrophysics Data System (ADS)

Zou, D. B.; Pukhov, A.; Yi, L. Q.; Zhou, H. B.; Yu, T. P.; Yin, Y.; Shao, F. Q.

2017-02-01

Efficient energy boost of the laser-accelerated ions is critical for their applications in biomedical and hadron research. Achiev-able energies continue to rise, with currently highest energies, allowing access to medical therapy energy windows. Here, a new regime of simultaneous acceleration of ~100 MeV protons and multi-100 MeV carbon-ions from plasma micro-channel targets is proposed by using a ~1020 W/cm2 modest intensity laser pulse. It is found that two trains of overdense electron bunches are dragged out from the micro-channel and effectively accelerated by the longitudinal electric-field excited in the plasma channel. With the optimized channel size, these “superponderomotive” energetic electrons can be focused on the front surface of the attached plastic substrate. The much intense sheath electric-field is formed on the rear side, leading to up to ~10-fold ionic energy increase compared to the simple planar geometry. The analytical prediction of the optimal channel size and ion maximum energies is derived, which shows good agreement with the particle-in-cell simulations.

Structure of the TRPV1 ion channel determined by electron cryo-microscopy

PubMed Central

Liao, Maofu; Cao, Erhu; Julius, David; Cheng, Yifan

2014-01-01

Transient receptor potential (TRP) channels are sensors for a wide range of cellular and environmental signals, but elucidating how these channels respond to physical and chemical stimuli has been hampered by a lack of detailed structural information. Here, we exploit advances in electron cryo-microscopy to determine the structure of a mammalian TRP channel, TRPV1, at 3.4Å resolution, breaking the side-chain resolution barrier for membrane proteins without crystallization. Like voltage-gated channels, TRPV1 exhibits four-fold symmetry around a central ion pathway formed by transmembrane helices S5–S6 and the intervening pore loop, which is flanked by S1–S4 voltage sensor-like domains. TRPV1 has a wide extracellular ‘mouth’ with short selectivity filter. The conserved ‘TRP domain’ interacts with the S4–S5 linker, consistent with its contribution to allosteric modulation. Subunit organization is facilitated by interactions among cytoplasmic domains, including N-terminal ankyrin repeats. These observations provide a structural blueprint for understanding unique aspects of TRP channel function. PMID:24305160

Orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, L. J.; Nie, S. H.; Xiong, P.

The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic-more » to square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

The qualitative f-ratio method applied to electron channelling-induced x-ray imaging with an annular silicon drift detector in a scanning electron microscope in the transmission mode.

PubMed

Brodusch, Nicolas; Gauvin, Raynald

2017-09-01

Electron channelling is known to affect the x-ray production when an accelerated electron beam is applied to a crystalline material and is highly dependent on the local crystal orientation. This effect, unless very long counting time are used, is barely noticeable on x-ray energy spectra recorded with conventional silicon drift detectors (SDD) located at a small elevation angle. However, the very high count rates provided by the new commercially available annular SDDs permit now to observe this effect routinely and may, in some circumstances, hide the true elemental x-ray variations due to the local true specimen composition. To circumvent this issue, the recently developed f-ratio method was applied to display qualitatively the true net intensity x-ray variations in a thin specimen of a Ti-6Al-4V alloy in a scanning electron microscope in transmission mode. The diffraction contrast observed in the x-ray images was successfully cancelled through the use of f-ratios and the true composition variations at the grain boundaries could be observed in relation to the dislocation alignment prior to the β-phase nucleation. The qualitative effectiveness in removing channelling effects demonstrated in this work makes the f-ratio, in its quantitative form, a possible alternative to the ZAF method in channelling conditions. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Numerical experiment to estimate the validity of negative ion diagnostic using photo-detachment combined with Langmuir probing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oudini, N.; Sirse, N.; Ellingboe, A. R.

2015-07-15

This paper presents a critical assessment of the theory of photo-detachment diagnostic method used to probe the negative ion density and electronegativity α = n{sub -}/n{sub e}. In this method, a laser pulse is used to photo-detach all negative ions located within the electropositive channel (laser spot region). The negative ion density is estimated based on the assumption that the increase of the current collected by an electrostatic probe biased positively to the plasma is a result of only the creation of photo-detached electrons. In parallel, the background electron density and temperature are considered as constants during this diagnostics. While the numericalmore » experiments performed here show that the background electron density and temperature increase due to the formation of an electrostatic potential barrier around the electropositive channel. The time scale of potential barrier rise is about 2 ns, which is comparable to the time required to completely photo-detach the negative ions in the electropositive channel (∼3 ns). We find that neglecting the effect of the potential barrier on the background plasma leads to an erroneous determination of the negative ion density. Moreover, the background electron velocity distribution function within the electropositive channel is not Maxwellian. This is due to the acceleration of these electrons through the electrostatic potential barrier. In this work, the validity of the photo-detachment diagnostic assumptions is questioned and our results illustrate the weakness of these assumptions.« less

Investigation of channeling and radiation of relativistic electrons in charged planes of the crystals with zinc blende structure

NASA Astrophysics Data System (ADS)

Maksyuta, N. V.; Vysotskii, V. I.; Efimenko, S. V.; Slinchenko, Y. A.

2018-04-01

In this paper the interaction potentials of relativistic electrons with the charged (2m+1, 2n+1, 2p+1) and (2m+1, 2n, 2p) planes (m, n, p=0,1,dot s, and Miller indices are mutually prime numbers) in the crystals with a zinc blende structure are calculated using Moliere approximation. It is shown that at the change of the type of used crystal plane (from the main (100) to the high-index charged planes), the structures of potential wells are transformed from non-unimodal to unimodal ones. In this case for the crystals constructed from ions with close nucleus charges, there arise so-called positron-like potential wells for the channeled electrons, i.e. with minima in the interplanar space. The influence of temperature factor on interaction potentials structures is also investigated. For the electrons with Lorentz-factors γ = 25, 50, 75 in the main (100) and (111) planes the transverse energy levels and corresponding wave functions in single planar approximation are found numerically. By means of these data the spectra of channeling radiation (CR) in dipole approximation are calculated for the electrons beams with a Lorentz-factor γ = 50 and an angular dispersion θ 0 ≈ 0,5 mrad, arising in the main charged (100) and (111) planes in ZnS, ZnSe and ZnTe crystals. It is shown that the CR generated at electron channeling along the (111) planes is more intense. It is shown also that spectra of CR arising in (111) planes of silicon and AlP crystals at using of channeled electron beam with γ = 25 and an angular dispersion θ 0 ≈ 0,5 mrad, due to similarity of structures of potential wells are identical. The spectra of CR at γ = 25, 50, 75 are calculated for a number of crystals with a zinc blende structure, namely AlP, AlAs, AlSb, GaP, GaAs, InP, InAs, InSb.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Sheath energy transmission in a collisional plasma with collisionless sheath

DOE PAGES

Tang, Xian-Zhu; Guo, Zehua

2015-10-16

Sheath energy transmission governs the plasma energy exhaust onto a material surface. The ion channel is dominated by convection, but the electron channel has a significant thermal conduction component, which is dominated by the Knudsen layer effect in the presence of an absorbing wall. First-principle kinetic simulations also reveal a robustly supersonic sheath entry flow. The ion sheath energy transmission and the sheath potential are accurately predicted by a sheath model of truncated bi-Maxwellian electron distribution. The electron energy transmission is further enhanced by a parallel heat flux of the perpendicular degrees of freedom.

ELECTRONIC SYSTEM

DOEpatents

Robison, G.H. et al.

1960-11-15

An electronic system is described for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. It is comprised of separate input means electrically associated with the events under observation: an electronic channel associated with each input means including control means and indicating means; timing means associated with each of the input means and the control means and adapted to derive a signal from the input means and apply it after a predetermined time to the control means to effect deactivation of each of the channels; and means for resetting the system to its initial condition after observation of each group of events.

Relativistic Gurzhi effect in channels of Dirac materials

NASA Astrophysics Data System (ADS)

Kashuba, Oleksiy; Trauzettel, Björn; Molenkamp, Laurens W.

2018-05-01

Charge transport in channel-shaped 2D Dirac systems is studied employing the Boltzmann equation. The dependence of the resistivity on temperature and chemical potential is investigated. An accurate understanding of the influence of electron-electron interaction and material disorder allows us to identify a parameter regime, where the system reveals hydrodynamic transport behavior. We point out the conditions for three Dirac fermion specific features: heat flow hydrodynamics, pseudodiffusive transport, and the electron-hole scattering dominated regime. It is demonstrated that for clean samples the relativistic Gurzhi effect, a definite indicator of hydrodynamic transport, can be observed.

The piezoelectric gating effect in a thin bent membrane with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Shevyrin, Andrey A.; Pogosov, Arthur G.

2018-05-01

Thin suspended nanostructures with a two-dimensional electron gas can be used as nanoelectromechanical systems in which electron transport is piezoelectrically coupled to mechanical motion and vibrations. Apart from practical applications, these systems are interesting for studying electron transport under unusual conditions, namely, in the presence of additional mechanical degrees of freedom. In the present paper, we analyze the influence of the bending on the density of a gated two-dimensional electron gas contained in a suspended membrane using the Thomas–Fermi approach and the model of pure electrostatic screening. We show that a small bending is analogous to a small change in gate voltages. Our calculations demonstrate that the density change is most prominent near the edges of the conductive channel created by negatively biased gates. When moving away from these edges, the bending-induced density change rapidly decays. We propose several methods to increase the magnitude of the effect, with the largest benefit obtained from coverage of the conductive channel with an additional grounded gate. It is shown that, for a conductive channel under a bare surface, the largest effect can be achieved if the two-dimensional electron gas is placed near the middle of the membrane thickness, despite the bending-induced strain is zero there.

All-optical regenerator of multi-channel signals.

PubMed

Li, Lu; Patki, Pallavi G; Kwon, Young B; Stelmakh, Veronika; Campbell, Brandon D; Annamalai, Muthiah; Lakoba, Taras I; Vasilyev, Michael

2017-10-12

One of the main reasons why nonlinear-optical signal processing (regeneration, logic, etc.) has not yet become a practical alternative to electronic processing is that the all-optical elements with nonlinear input-output relationship have remained inherently single-channel devices (just like their electronic counterparts) and, hence, cannot fully utilise the parallel processing potential of optical fibres and amplifiers. The nonlinear input-output transfer function requires strong optical nonlinearity, e.g. self-phase modulation, which, for fundamental reasons, is always accompanied by cross-phase modulation and four-wave mixing. In processing multiple wavelength-division-multiplexing channels, large cross-phase modulation and four-wave mixing crosstalks among the channels destroy signal quality. Here we describe a solution to this problem: an optical signal processor employing a group-delay-managed nonlinear medium where strong self-phase modulation is achieved without such nonlinear crosstalk. We demonstrate, for the first time to our knowledge, simultaneous all-optical regeneration of up to 16 wavelength-division-multiplexing channels by one device. This multi-channel concept can be extended to other nonlinear-optical processing schemes.Nonlinear optical processing devices are not yet fully practical as they are single channel. Here the authors demonstrate all-optical regeneration of up to 16 channels by one device, employing a group-delay-managed nonlinear medium where strong self-phase modulation is achieved without nonlinear inter-channel crosstalk.

Energy and angular distributions of electron emission from diatomic molecules by bare ion impact

NASA Astrophysics Data System (ADS)

Mondal, A.; Mandal, C. R.; Purkait, M.

2015-06-01

The three-Coulomb wave model has been used extensively to study the energy and angular distributions of double-differential cross sections (DDCS) of electron emissions from hydrogen and nitrogen molecules by bare ion impact at intermediate and high energies. In the present model, we have expressed the molecular triple differential cross section in terms of the corresponding atomic triple differential cross section multiplied by the occupation number and the average Rayleigh interference factor, which accounts for the two-center interference effect. Here we have used an active electron approximation of the molecule as a whole in the initial channel. To account for the effect of passive electrons, we have constructed a model potential that satisfies the initial conditions and the corresponding wavefunction has been calculated from the model Hamiltonian of the active electron in the target. In the final channel, we have used a hydrogenic model with an effective nuclear charge that is calculated from its binding energy. In this model, the correlated motion of the particles in the exit channel of the reaction is considered by an adequate product of three-Coulomb functions. The emitted electron, the incident projectile ion and the residual ion are considered to be in same plane. The obtained results are compared with other recent theoretical and experimental findings. There is an overall agreement of the calculations with the experimental data for electron emission cross sections.

76 FR 35181 - Wireless Backhaul; Further Inquiry Into Fixed Service Sharing of the 6875-7125 and 12700-13200...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-16

... continuation of electronic newsgathering operations, and the appropriate channelization scheme, coordination... also sought comment on alternative channelization schemes. Several commenters, including FWCC and...

Development of two-channel prototype ITER vacuum ultraviolet spectrometer with back-illuminated charge-coupled device and microchannel plate detectors.

PubMed

Seon, C R; Choi, S H; Cheon, M S; Pak, S; Lee, H G; Biel, W; Barnsley, R

2010-10-01

A vacuum ultraviolet (VUV) spectrometer of a five-channel spectral system is designed for ITER main plasma impurity measurement. To develop and verify the system design, a two-channel prototype system is fabricated with No. 3 (14.4-31.8 nm) and No. 4 (29.0-60.0 nm) among the five channels. The optical system consists of a collimating mirror to collect the light from source to slit, two holographic diffraction gratings with toroidal geometry, and two different electronic detectors. For the test of the prototype system, a hollow cathode lamp is used as a light source. To find the appropriate detector for ITER VUV system, two kinds of detectors of the back-illuminated charge-coupled device and the microchannel plate electron multiplier are tested, and their performance has been investigated.

Energy transduction and signal averaging of fluctuating electric fields by a single protein ion channel.

PubMed

Verdia-Baguena, C; Gomez, V; Cervera, J; Ramirez, P; Mafe, S

2016-12-21

We demonstrate the electrical rectification and signal averaging of fluctuating signals using a biological nanostructure in aqueous solution: a single protein ion channel inserted in the lipid bilayer characteristic of cell membranes. The conversion of oscillating, zero time-average potentials into directional currents permits charging of a load capacitor to significant steady-state voltages within a few minutes in the case of the outer membrane porin F (OmpF) protein, a bacterial channel of Escherichia coli. The experiments and simulations show signal averaging effects at a more fundamental level than the traditional cell and tissue scales, which are characterized by ensembles of many ion channels operating simultaneously. The results also suggest signal transduction schemes with bio-electronic interfaces and ionic circuits where soft matter nanodiodes can be coupled to conventional electronic elements.

Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

NASA Astrophysics Data System (ADS)

Wang, Xiao; Shen, Zhihua; Wu, Shengli; Zhang, Jintao

2017-06-01

Vacuum field-effect transistors (VFETs) with channel lengths down to 500 nm (i.e., the deep submicron scale) were fabricated with the mature technology of the surface conduction electron emitter fabrication process in our former experiments. The vacuum channel of this new VFET was generated by using the electro-forming process. During electro-forming, the joule heat cracks the conductive film and then generates the submicron scale gap that serves as the vacuum channel. The gap separates the conductive film into two plane-to-plane electrodes, which serve as a source (cathode) electrode and a drain (anode) electrode of the VFET, respectively. Experimental results reveal that the fabricated device demonstrates a clear triode behavior of the gate modulation. Fowler-Nordheim theory was used to analyze the electron emission mechanism and operating principle of the device.

Rare reaction channels in real-time time-dependent density functional theory: the test case of electron attachment

NASA Astrophysics Data System (ADS)

Lacombe, Lionel; Dinh, P. Huong Mai; Reinhard, Paul-Gerhard; Suraud, Eric; Sanche, Leon

2015-08-01

We present an extension of standard time-dependent density functional theory (TDDFT) to include the evaluation of rare reaction channels, taking as an example of application the theoretical modelling of electron attachment to molecules. The latter process is of great importance in radiation-induced damage of biological tissue for which dissociative electron attachment plays a decisive role. As the attachment probability is very low, it cannot be extracted from the TDDFT propagation whose mean field provides an average over various reaction channels. To extract rare events, we augment TDDFT by a perturbative treatment to account for the occasional jumps, namely electron capture in our test case. We apply the modelling to electron attachment to H2O, H3O+, and (H2O)2. Dynamical calculations have been done at low energy (3-16 eV). We explore, in particular, how core-excited states of the targets show up as resonances in the attachment probability. Contribution to the Topical Issue "COST Action Nano-IBCT: Nano-scale Processes Behind Ion-Beam Cancer Therapy", edited by Andrey Solov'yov, Nigel Mason, Gustavo García, Eugene Surdutovich.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results aremore » in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.« less

Nicotinic Receptor Transduction Zone: Invariant Arginine Couples to Multiple Electron-Rich Residues

PubMed Central

Mukhtasimova, Nuriya; Sine, Steven M.

2013-01-01

Summary Gating of the muscle-type acetylcholine receptor (AChR) channel depends on communication between the ACh-binding site and the remote ion channel. A key region for this communication is located within the structural transition zone between the ligand-binding and pore domains. Here, stemming from β-strand 10 of the binding domain, the invariant αArg209 lodges within the hydrophobic interior of the subunit and is essential for rapid and efficient channel gating. Previous charge-reversal experiments showed that the contribution of αArg209 to channel gating depends strongly on αGlu45, also within this region. Here we determine whether the contribution of αArg209 to channel gating depends on additional anionic or electron-rich residues in this region. Also, to reconcile diverging findings in the literature, we compare the dependence of αArg209 on αGlu45 in AChRs from different species, and compare the full agonist ACh with the weak agonist choline. Our findings reveal that the contribution of αArg209 to channel gating depends on additional nearby electron-rich residues, consistent with both electrostatic and steric contributions. Furthermore, αArg209 and αGlu45 show a strong interdependence in both human and mouse AChRs, whereas the functional consequences of the mutation αE45R depend on the agonist. The emerging picture shows a multifaceted network of interdependent residues that are required for communication between the ligand-binding and pore domains. PMID:23442857

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

PubMed

Liu, Yuan; Guo, Jian; Wu, Yecun; Zhu, Enbo; Weiss, Nathan O; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Xu, Yang; Shakir, Imran; Huang, Yu; Duan, Xiangfeng

2016-10-12

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS 2 ) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS 2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS 2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS 2 transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

Dislocation density of pure copper processed by accumulative roll bonding and equal-channel angular pressing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyajima, Yoji, E-mail: miyajima.y.ab@m.titech.ac.jp; Okubo, Satoshi; Abe, Hiroki

The dislocation density of pure copper fabricated by two severe plastic deformation (SPD) processes, i.e., accumulative roll bonding and equal-channel angular pressing, was evaluated using scanning transmission electron microscopy/transmission electron microscopy observations. The dislocation density drastically increased from ~ 10{sup 13} m{sup −} {sup 2} to about 5 × 10{sup 14} m{sup −} {sup 2}, and then saturated, for both SPD processes.

Quaternary pulse position modulation electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Budinger, J. M.; Kerslake, S. D.; Nagy, L. A.; Shalkhauser, M. J.; Soni, N. J.; Cauley, M. A.; Mohamed, J. H.; Stover, J. B.; Romanofsky, R. R.; Lizanich, P. J.

1991-01-01

The development of a high data-rate communications electronic subsystem for future application in free-space, direct-detection laser communications is described. The dual channel subsystem uses quaternary pulse position modulation (GPPM) and operates at a throughput of 650 megabits per second. Transmitting functions described include source data multiplexing, channel data multiplexing, and QPPM symbol encoding. Implementation of a prototype version in discrete gallium arsenide logic, radiofrequency components, and microstrip circuitry is presented.

Quaternary pulse position modulation electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Budinger, J. M.; Kerslake, S. D.; Nagy, L. A.; Shalkhauser, M. J.; Soni, N. J.; Cauley, M. A.; Mohamed, J. H.; Stover, J. B.; Romanofsky, R. R.; Lizanich, P. J.

1991-01-01

The development of a high data-rate communications electronic subsystem for future application in free-space, direct-detection laser communications is described. The dual channel subsystem uses quaternary pulse position modulation (QPPM) and operates at a throughput of 650 megabits per second. Transmitting functions described include source data multiplexing, channel data multiplexing, and QPPM symbol encoding. Implementation of a prototype version in discrete gallium arsenide logic, radiofrequency components, and microstrip circuitry is presented.

Electromechanical flight control actuator, volume 2

NASA Technical Reports Server (NTRS)

1978-01-01

Schematic diagrams are given for both the four-channel electromechanical actuator and the single-channel power electronics breadboard. Detailed design data is also given on the gears used in the differential gearbox and a copy of the operations manual for the system is included. Performance test results are given for the EMA motor and its current source indicator, the drive control electronics, and the overall system. The power converter waveform test results are also summarized.

A discrete-time chaos synchronization system for electronic locking devices

NASA Astrophysics Data System (ADS)

Minero-Ramales, G.; López-Mancilla, D.; Castañeda, Carlos E.; Huerta Cuellar, G.; Chiu Z., R.; Hugo García López, J.; Jaimes Reátegui, R.; Villafaña Rauda, E.; Posadas-Castillo, C.

2016-11-01

This paper presents a novel electronic locking key based on discrete-time chaos synchronization. Two Chen chaos generators are synchronized using the Model-Matching Approach, from non-linear control theory, in order to perform the encryption/decryption of the signal to be transmitted. A model/transmitter system is designed, generating a key of chaotic pulses in discrete-time. A plant/receiver system uses the above mentioned key to unlock the mechanism. Two alternative schemes to transmit the private chaotic key are proposed. The first one utilizes two transmission channels. One channel is used to encrypt the chaotic key and the other is used to achieve output synchronization. The second alternative uses only one transmission channel for obtaining synchronization and encryption of the chaotic key. In both cases, the private chaotic key is encrypted again with chaos to solve secure communication-related problems. The results obtained via simulations contribute to enhance the electronic locking devices.

Simulations of Beam Optics and Bremsstrahlung for High Intensity and Brightness Channeling Radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hyun, J.; Piot, P.; Sen, T.

2018-04-12

This paper presents X-ray spectra of channeling radiation expected at the FAST (Fermi Accelerator Science and Technology) facility in Fermilab. Our purpose is to produce high brightness quasi-monochromatic X-rays in an energy range from 40 keV to 110 keV. We will use a diamond crystal and low emittance electrons with an energy of around 43 MeV. The quality of emitted X-rays depends on parameters of the electron beam at the crystal. We present simulations of the beam optics for high brightness and high yield operations for a range of bunch charges. We estimate the X-ray spectra including bremsstrahlung background. Wemore » discuss how the electron beam distributions after the diamond crystal are affected by channeling. We discuss an X-ray detector system to avoid pile-up effects during high charge operations.« less

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Simulations of Beam Optics and Bremsstrahlung for High Intensity and Brightness Channeling Radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hyun, J.; Piot, P.; Sen, T.

This paper presents X-ray spectra of channeling radiation expected at the FAST (Fermi Accelerator Science and Technology) facility in Fermilab. Our purpose is to produce high brightness quasi-monochromatic X-rays in an energy range from 40 keV to 110 keV. We will use a diamond crystal and low emittance electrons with an energy of around 43 MeV. The quality of emitted X-rays depends on parameters of the electron beam at the crystal. We present simulations of the beam optics for high brightness and high yield operations for a range of bunch charges. We estimate the X-ray spectra including bremsstrahlung background. Wemore » discuss how the electron beam distributions after the diamond crystal are affected by channeling. Here, we discuss an X-ray detector system to avoid pile-up effects during high charge operations.« less

Melting of Wigner Crystal on Helium in Quasi-One-Dimensional Geometry

NASA Astrophysics Data System (ADS)

Ikegami, Hiroki; Akimoto, Hikota; Kono, Kimitoshi

2015-05-01

We discuss melting of a Wigner crystal formed on a free surface of superfluid He, in quasi-one-dimensional (Q1D) channels of width between 5 and 15 m. We reexamine our previous transport data (Ikegami et al. in Phys Rev B 82:201104(R), 2010), in particular, by estimating the number of electrons across the channel in a more accurate way with the aid of numerical calculations of distributions of the electrons in the channels. The results of reexamination indicate more convincingly that the melting of the Wigner crystal in the Q1D geometry is understood by the finite size effect on the Kosterlitz-Thouless-Halperin-Nelson-Young melting process. We also present technical details of the transport measurements of the electrons in a Q1D geometry, including a fabrication method of devices used for the transport measurements, numerical simulations of response of the devices, and a procedure for analyzing transport data.

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Simulations of Beam Optics and Bremsstrahlung for High Intensity and Brightness Channeling Radiation

DOE PAGES

Hyun, J.; Piot, P.; Sen, T.

2018-06-14

This paper presents X-ray spectra of channeling radiation expected at the FAST (Fermi Accelerator Science and Technology) facility in Fermilab. Our purpose is to produce high brightness quasi-monochromatic X-rays in an energy range from 40 keV to 110 keV. We will use a diamond crystal and low emittance electrons with an energy of around 43 MeV. The quality of emitted X-rays depends on parameters of the electron beam at the crystal. We present simulations of the beam optics for high brightness and high yield operations for a range of bunch charges. We estimate the X-ray spectra including bremsstrahlung background. Wemore » discuss how the electron beam distributions after the diamond crystal are affected by channeling. Here, we discuss an X-ray detector system to avoid pile-up effects during high charge operations.« less

Delayed electron emission in strong-field driven tunnelling from a metallic nanotip in the multi-electron regime

PubMed Central

Yanagisawa, Hirofumi; Schnepp, Sascha; Hafner, Christian; Hengsberger, Matthias; Kim, Dong Eon; Kling, Matthias F.; Landsman, Alexandra; Gallmann, Lukas; Osterwalder, Jürg

2016-01-01

Illuminating a nano-sized metallic tip with ultrashort laser pulses leads to the emission of electrons due to multiphoton excitations. As optical fields become stronger, tunnelling emission directly from the Fermi level becomes prevalent. This can generate coherent electron waves in vacuum leading to a variety of attosecond phenomena. Working at high emission currents where multi-electron effects are significant, we were able to characterize the transition from one regime to the other. Specifically, we found that the onset of laser-driven tunnelling emission is heralded by the appearance of a peculiar delayed emission channel. In this channel, the electrons emitted via laser-driven tunnelling emission are driven back into the metal, and some of the electrons reappear in the vacuum with some delay time after undergoing inelastic scattering and cascading processes inside the metal. Our understanding of these processes gives insights on attosecond tunnelling emission from solids and should prove useful in designing new types of pulsed electron sources. PMID:27786287

Fractional conductance oscillations in quantum rings: wave packet picture of transport in a few-electron system.

PubMed

Chwiej, T; Szafran, B

2013-04-17

We study electron transfer across a two-terminal quantum ring using a time-dependent description of the scattering process. For the considered scattering event the quantum ring is initially charged with one or two electrons, with another electron incident to the ring from the input channel. We study the electron transfer probability (T) as a function of the external magnetic field. We determine the periodicity of T for a varied number of electrons confined within the ring. For that purpose we develop a method to describe the wave packet dynamics for a few electrons participating in the scattering process, taking into full account the electron-electron correlations. We find that electron transfer across the quantum ring initially charged by a single electron acquires a distinct periodicity of half of the magnetic flux quantum (Φ0/2), corresponding to the formation of a transient two-electron state inside the ring. In the case of a three-electron scattering problem with two electrons initially occupying the ring, a period of Φ0/3 for T is formed in the limit of thin channels. The effect of disorder present in the confinement potential of the ring is also discussed.

Carbon Nanotube Flexible and Stretchable Electronics

NASA Astrophysics Data System (ADS)

Cai, Le; Wang, Chuan

2015-08-01

The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.

Carbon Nanotube Flexible and Stretchable Electronics.

PubMed

Cai, Le; Wang, Chuan

2015-12-01

The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.

Non-linear theory of a cavitated plasma wake in a plasma channel for special applications and control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Johannes, E-mail: thomas@tp1.uni-duesseldorf.de; Pronold, Jari; Pukhov, Alexander

2016-05-15

We introduce a complete semi-analytical model for a cavitated electron wake driven by an electron beam in a radially inhomogeneous plasma. The electron response to the driver, dynamics of electrons in a thin sheath surrounding the cavity, as well as accelerating and focusing fields inside the cavity are calculated in the quasistatic approximation. Our theory holds for arbitrary radial density profiles and reduces to known models in the limit of a homogeneous plasma. A free-propagating blow-out in an evacuated channel experiences longitudinal squeezing, qualitatively the same as observed in particle-in-cell simulations for the laser pulse-driven case [Pukhov et al., Phys.more » Rev. Lett. 113, 245003 (2014)]. Our model also permits qualitative interpretation of the earlier observed cancellation of the focusing gradient in the cavity [Pukhov et al., Phys. Rev. Lett. 113, 245003 (2014)]. In this work, we show the underlying mechanism that causes the radial fields in the vacuum part of a channel to become defocussing.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Weihuan; France, David M.; Yu, Wenhua

At present, single-phase liquid, forced convection cooled heat sinks with fins are used to cool power electronics in hybrid electric vehicles (HEVs). Although use of fins in the cooling channels increases heat transfer rates considerably, a second low-temperature radiator and associated pumping system are still required in HEVs. This additional cooling system adds weight and cost while decreasing the efficiency of HEVs. With the objective of eliminating this additional low-temperature radiator and pumping system in HEVs, an alternative cooling technology, subcooled boiling in the cooling channels, was investigated in the present study. Numerical heat transfer simulations were performed using subcooledmore » boiling in the power electronics cooling channels with the coolant supplied from the existing main engine cooling system. Results show that this subcooled boiling system is capable of removing 25% more heat from the power electronics than the conventional forced convection cooling technology, or it can reduce the junction temperature of the power electronics at the current heat removal rate. With the 25% increased heat transfer option, high heat fluxes up to 250 W/cm(2) (typical for wideband-gap semiconductor applications) are possible by using the subcooled boiling system.« less

Time-series analysis of energetic electron fluxes (1. 2 - 16 MeV) at geosynchronous altitude. Master's thesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halpin, M.P.

This project used a Box and Jenkins time-series analysis of energetic electron fluxes measured at geosynchronous orbit in an effort to derive prediction models for the flux in each of five energy channels. In addition, the technique of transfer function modeling described by Box and Jenkins was used in an attempt to derive input-output relationships between the flux channels (viewed as the output) and the solar-wind speed or interplanetary magnetic field (IMF) north-south component, Bz, (viewed as the input). The transfer function modeling was done in order to investigate the theoretical dynamic relationship which is believed to exist between themore » solar wind, the IMF Bz, and the energetic electron flux in the magnetosphere. The models derived from the transfer-function techniques employed were also intended to be used in the prediction of flux values. The results from this study indicate that the energetic electron flux changes in the various channels are dependent on more than simply the solar-wind speed or the IMF Bz.« less

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

DOE PAGES

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; ...

2016-08-05

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2). Here, we systematicallymore » show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.« less

A spherical electron-channelling pattern map for use in quartz petrofabric analysis

USGS Publications Warehouse

Lloyd, G.E.; Ferguson, C.C.

1986-01-01

Electron channelling patterns (ECP's) are formed in the scanning electron microscope (SEM) by the interaction between the incident electrons and the lattice of crystalline specimens. The patterns are unique for a particular crystallographic orientation and are therefore of considerable potential in petrofabric studies provided they can be accurately indexed. Indexing requires an ECP-map of the crystallographic stereogram or unit triangle covering all possible orientations and hence ECP patterns. Due to the presence of long-range distortions in planar ECP-maps, it is more convenient to construct the maps over a spherical surface. This also facilitates the indexing of individual ECP's. A spherical ECP-map for quartz is presented together with an example of its use in petrofabric analysis. ?? 1986.

Segmented cold cathode display panel

NASA Technical Reports Server (NTRS)

Payne, Leslie (Inventor)

1998-01-01

The present invention is a video display device that utilizes the novel concept of generating an electronically controlled pattern of electron emission at the output of a segmented photocathode. This pattern of electron emission is amplified via a channel plate. The result is that an intense electronic image can be accelerated toward a phosphor thus creating a bright video image. This novel arrangement allows for one to provide a full color flat video display capable of implementation in large formats. In an alternate arrangement, the present invention is provided without the channel plate and a porous conducting surface is provided instead. In this alternate arrangement, the brightness of the image is reduced but the cost of the overall device is significantly lowered because fabrication complexity is significantly decreased.

Electric Dipolar Kondo Effect Emerging from a Vibrating Magnetic Ion

NASA Astrophysics Data System (ADS)

Hotta, Takashi; Ueda, Kazuo

2012-06-01

When a magnetic ion vibrates in a metal, it inevitably introduces a new channel of hybridization with conduction electrons, and in general, the vibrating ion induces an electric dipole moment. In such a situation, we find that magnetic and nonmagnetic Kondo effects alternatively occur due to the screening of the spin moment and electric dipole moment of the vibrating ion. In particular, the electric dipolar two-channel Kondo effect is found to occur for a weak Coulomb interaction. We also show that a magnetically robust heavy-electron state appears near the fixed point of the electric dipolar two-channel Kondo effect. We believe that the vibrating magnetic ion opens a new door in Kondo physics.

Evolution of beams in a plasma channel due to beam break up

NASA Astrophysics Data System (ADS)

Penn, Gregory; Lehe, Remi; Vay, Jean-Luc; Schroeder, Carl; Esarey, Eric

2016-10-01

We study the dynamics of beam break-up (BBU) of an accelerated electron beam in a plasma channel. Particle-in-cell simulations using the codes WARP and FBPIC are presented and interpreted in terms of theoretical calculations for the plasma-induced fields and the evolution of the instability. We focus on cylindrical channels for simplicity, and other geometries are considered to better understand the impact of BBU on electron beams undergoing laser-plasma wake field acceleration. We compare our findings with other published results. This work was supported by the Director, Office of Science, Office of High Energy Physics, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Topological quantum pump in serpentine-shaped semiconducting narrow channels

NASA Astrophysics Data System (ADS)

Pandey, Sudhakar; Scopigno, Niccoló; Gentile, Paola; Cuoco, Mario; Ortix, Carmine

2018-06-01

We propose and analyze theoretically a one-dimensional solid-state electronic setup that operates as a topological charge pump in the complete absence of superimposed oscillating local voltages. The system consists of a semiconducting narrow channel with a strong Rashba spin-orbit interaction patterned in a mesoscale serpentine shape. A rotating planar magnetic field serves as the external ac perturbation, and cooperates with the Rashba spin-orbit interaction, which is modulated by the geometric curvature of the electronic channel to realize the topological pumping protocol, originally introduced by Thouless, in a different fashion. We expect the precise pumping of electric charges in our mesoscopic quantum device to be relevant for quantum metrology purposes.

Quantum limit of heat flow across a single electronic channel.

PubMed

Jezouin, S; Parmentier, F D; Anthore, A; Gennser, U; Cavanna, A; Jin, Y; Pierre, F

2013-11-01

Quantum physics predicts that there is a fundamental maximum heat conductance across a single transport channel and that this thermal conductance quantum, G(Q), is universal, independent of the type of particles carrying the heat. Such universality, combined with the relationship between heat and information, signals a general limit on information transfer. We report on the quantitative measurement of the quantum-limited heat flow for Fermi particles across a single electronic channel, using noise thermometry. The demonstrated agreement with the predicted G(Q) establishes experimentally this basic building block of quantum thermal transport. The achieved accuracy of below 10% opens access to many experiments involving the quantum manipulation of heat.

A reconfigurable gate architecture for Si/SiGe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zajac, D. M.; Hazard, T. M.; Mi, X.

2015-06-01

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

A custom readout electronics for the BESIII CGEM detector

NASA Astrophysics Data System (ADS)

Da Rocha Rolo, M.; Alexeev, M.; Amoroso, A.; Baldini Ferroli, R.; Bertani, M.; Bettoni, D.; Bianchi, F.; Bugalho, R.; Calcaterra, A.; Canale, N.; Capodiferro, M.; Carassiti, V.; Cerioni, S.; Chai, J. Y.; Chiozzi, S.; Cibinetto, G.; Cossio, F.; Cotta Ramusino, A.; De Mori, F.; Destefanis, M.; Di Francesco, A.; Dong, J.; Evangelisti, F.; Farinelli, R.; Fava, L.; Felici, G.; Fioravanti, E.; Garzia, I.; Gatta, M.; Greco, M.; Lavezzi, L.; Leng, C. Y.; Li, H.; Maggiora, M.; Malaguti, R.; Marcello, S.; Marciniewski, P.; Melchiorri, M.; Mezzadri, G.; Mignone, M.; Morello, G.; Pacetti, S.; Patteri, P.; Pellegrino, J.; Pelosi, A.; Rivetti, A.; Savrié, M.; Scodeggio, M.; Soldani, E.; Sosio, S.; Spataro, S.; Tskhadadze, E.; Varela, J.; Verma, S.; Wheadon, R.; Yan, L.

2017-07-01

For the upgrade of the inner tracker of the BESIII spectrometer, planned for 2018, a lightweight tracker based on an innovative Cylindrical Gas Electron Multiplier (CGEM) detector is now under development. The analogue readout of the CGEM enables the use of a charge centroid algorithm to improve the spatial resolution to better than 130 μm while loosening the pitch strip to 650 μm, which allows to reduce the total number of channels to about 10 000. The channels are readout by 160 dedicated integrated 64-channel front-end ASICs, providing a time and charge measurement and featuring a fully-digital output. The energy measurement is extracted either from the time-over-threshold (ToT) or the 10-bit digitisation of the peak amplitude of the signal. The time of the event is generated by quad-buffered low-power TDCs, allowing for rates in excess of 60 kHz per channel. The TDCs are based on analogue interpolation techniques and produce a time stamp (or two, if working in ToT mode) of the event with a time resolution better than 50 ps. The front-end noise, based on a CSA and a two-stage complex conjugated pole shapers, dominate the channel intrinsic time jitter, which is less than 5 ns r.m.s. The time information of the hit can be used to reconstruct the track path, operating the detector as a small TPC and hence improving the position resolution when the distribution of the cloud, due to large incident angle or magnetic field, is very broad. Event data is collected by an off-detector motherboard, where each GEM-ROC readout card handles 4 ASIC carrier FEBs (512 channels). Configuration upload and data readout between the off-detector electronics and the VME-based data collector cards are managed by bi-directional fibre optical links. This paper covers the design of a custom front-end electronics for the readout of the new inner tracker of the BESIII experiment, addressing the relevant design aspects of the detector electronics and the front-end ASIC for the CGEM readout, and reviewing the first silicon results of the chip prototype.

Gafchromic EBT3 film dosimetry in electron beams — energy dependence and improved film read‐out

PubMed Central

Ojala, Jarkko; Kaijaluoto, Sampsa; Jokelainen, Ilkka; Kosunen, Antti

2016-01-01

For megavoltage photon radiation, the fundamental dosimetry characteristics of Gafchromic EBT3 film were determined in  60Co gamma ray beam with addition of experimental and Monte Carlo (MC)‐simulated energy dependence of the film for 6 MV photon beam and 6 MeV, 9 MeV, 12 MeV, and 16 MeV electron beams in water phantom. For the film read‐out, two phase correction of scanner sensitivity was applied: a matrix correction for scanning area and dose‐dependent correction by iterative procedure. With these corrections, the uniformity of response can be improved to be within ±50 pixel values (PVs). To improve the read‐out accuracy, a procedure with flipped film orientations was established. With the method, scanner uniformity can be improved further and dust particles, scratches and/or dirt on scanner glass can be detected and eliminated. Responses from red and green channels were averaged for read‐out, which decreased the effect of noise present in values from separate channels. Since the signal level with the blue channel is considerably lower than with other channels, the signal variation due to different perturbation effects increases the noise level so that the blue channel is not recommended to be used for dose determination. However, the blue channel can be used for the detection of emulsion thickness variations for film quality evaluations with unexposed films. With electron beams ranging from 6 MeV to 16 MeV and at reference measurement conditions in water, the energy dependence of the EBT3 film is uniform within 0.5%, with uncertainties close to 1.6% (k=2). Including 6 MV photon beam and the electron beams mentioned, the energy dependence is within 1.1%. No notable differences were found between the experimental and MC‐simulated responses, indicating negligible change in intrinsic energy dependence of the EBT3 film for 6 MV photon beam and 6 MeV–16 MeV electron beams. Based on the dosimetric characteristics of the EBT3 film, the read‐out procedure established, the nearly uniform energy dependence found and the estimated uncertainties, the EBT3 film was concluded to be a suitable 2D dosimeter for measuring electron or mixed photon/electron dose distributions in water phantom. Uncertainties of 3.7% (k=2) for absolute and 2.3% (k=2) for relative dose were estimated. PACS numbers: 87.53.Bn, 87.55.K‐, 87.55.Qr PMID:26894368

Sub-micron resolution selected area electron channeling patterns.

PubMed

Guyon, J; Mansour, H; Gey, N; Crimp, M A; Chalal, S; Maloufi, N

2015-02-01

Collection of selected area channeling patterns (SACPs) on a high resolution FEG-SEM is essential to carry out quantitative electron channeling contrast imaging (ECCI) studies, as it facilitates accurate determination of the crystal plane normal with respect to the incident beam direction and thus allows control the electron channeling conditions. Unfortunately commercial SACP modes developed in the past were limited in spatial resolution and are often no longer offered. In this contribution we present a novel approach for collecting high resolution SACPs (HR-SACPs) developed on a Gemini column. This HR-SACP technique combines the first demonstrated sub-micron spatial resolution with high angular accuracy of about 0.1°, at a convenient working distance of 10mm. This innovative approach integrates the use of aperture alignment coils to rock the beam with a digitally calibrated beam shift procedure to ensure the rocking beam is maintained on a point of interest. Moreover a new methodology to accurately measure SACP spatial resolution is proposed. While column considerations limit the rocking angle to 4°, this range is adequate to index the HR-SACP in conjunction with the pattern simulated from the approximate orientation deduced by EBSD. This new technique facilitates Accurate ECCI (A-ECCI) studies from very fine grained and/or highly strained materials. It offers also new insights for developing HR-SACP modes on new generation high-resolution electron columns. Copyright © 2014 Elsevier B.V. All rights reserved.

Interacting adiabatic quantum motor

NASA Astrophysics Data System (ADS)

Bruch, Anton; Kusminskiy, Silvia Viola; Refael, Gil; von Oppen, Felix

2018-05-01

We present a field-theoretic treatment of an adiabatic quantum motor. We explicitly discuss a motor called the Thouless motor which is based on a Thouless pump operating in reverse. When a sliding periodic potential is considered to be the motor degree of freedom, a bias voltage applied to the electron channel sets the motor in motion. We investigate a Thouless motor whose electron channel is modeled as a Luttinger liquid. Interactions increase the gap opened by the periodic potential. For an infinite Luttinger liquid the coupling-induced friction is enhanced by electron-electron interactions. When the Luttinger liquid is ultimately coupled to Fermi liquid reservoirs, the dissipation reduces to its value for a noninteracting electron system for a constant motor velocity. Our results can also be applied to a motor based on a nanomagnet coupled to a quantum spin Hall edge.

Dynamics and Hall-edge-state mixing of localized electrons in a two-channel Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Bellentani, Laura; Beggi, Andrea; Bordone, Paolo; Bertoni, Andrea

2018-05-01

We present a numerical study of a multichannel electronic Mach-Zehnder interferometer, based on magnetically driven noninteracting edge states. The electron path is defined by a full-scale potential landscape on the two-dimensional electron gas at filling factor 2, assuming initially only the first Landau level as filled. We tailor the two beamsplitters with 50 % interchannel mixing and measure Aharonov-Bohm oscillations in the transmission probability of the second channel. We perform time-dependent simulations by solving the electron Schrödinger equation through a parallel implementation of the split-step Fourier method, and we describe the charge-carrier wave function as a Gaussian wave packet of edge states. We finally develop a simplified theoretical model to explain the features observed in the transmission probability, and we propose possible strategies to optimize gate performances.

Applications of Classical and Quantum Mechanical Channeling in Condensed Matter Physics

NASA Astrophysics Data System (ADS)

Haakenaasen, Randi

1995-01-01

The first part of this work involves ion channeling measurements on the high temperature superconductor rm YBa_{2}Cu_{3}O _{7-delta}(YBCO). The experiments were motivated by several previous reports of anomalous behavior in the displacements of the Cu and O atoms in the vicinity of the critical temperature rm(T _{c}) in several high temperature superconductors. Our measurements were complimentary to previous experiments in that we used thin film YBCO (as opposed to bulk single crystals) and focused on a small region around rm T_{c}. We mapped out the channeling parameters chi _{min} and Psi_ {1/2} in a 30 K region around rm T_{c} in 1-2 K steps in thin film YBCO(001) on MgO. Neither of our measurements showed any discontinuities in chi _{min} or Psi_ {1/2} near the superconducting phase transition, and we therefore have no reason to expect anything but a smooth increase in atomic vibrations in this region. We conclude that any anomalous behavior in atomic displacements deduced from previous channeling experiments is not essential to superconductivity. In the second part of the work positrons were used to study quantum mechanical channeling effects. We clearly observed and quantitatively accounted for quantum interference effects, including Bragg diffraction, in the forward transmission of channeled MeV positrons through a single crystal. Experimental scans across the (100), (110), and (111) planes in Si showed excellent agreement with theoretical dynamical diffraction calculations, giving us confidence that we can accurately predict the spatial and momentum distributions of channeled positrons. New experiments are envisioned in which the channeling effect is combined with 2 quantum annihilation in flight measurements to determine valence electron and magnetic spin distributions in a crystal. Since the channeling effect focuses the positrons to the interstices of the crystal, the annihilation rate will reflect the valence electron density. Furthermore, the annihilation rate is sensitive to electron spin polarization, opening up the possibility of making measurements on magnetic materials. Detailed estimates for the count rates of such experiments are presented, indicating the feasibility of developing positron channeling into a new tool in solid state physics.

77 FR 5470 - Periodicals-Recognition of Distribution of Periodicals via Electronic Copies

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-03

... Electronic Copies AGENCY: Postal Service TM . ACTION: Proposed rule. SUMMARY: The Postal Service proposes to....6, to allow publishers who use electronic distribution methods to report such circulation as paid or... publications through various electronic media channels. According to the standards that govern the Periodicals...

Exchange pathways of plastoquinone and plastoquinol in the photosystem II complex

PubMed Central

Van Eerden, Floris J.; Melo, Manuel N.; Frederix, Pim W. J. M.; Periole, Xavier; Marrink, Siewert J.

2017-01-01

Plastoquinone (PLQ) acts as an electron carrier between photosystem II (PSII) and the cytochrome b6f complex. To understand how PLQ enters and leaves PSII, here we show results of coarse grained molecular dynamics simulations of PSII embedded in the thylakoid membrane, covering a total simulation time of more than 0.5 ms. The long time scale allows the observation of many spontaneous entries of PLQ into PSII, and the unbinding of plastoquinol (PLQol) from the complex. In addition to the two known channels, we observe a third channel for PLQ/PLQol diffusion between the thylakoid membrane and the PLQ binding sites. Our simulations point to a promiscuous diffusion mechanism in which all three channels function as entry and exit channels. The exchange cavity serves as a PLQ reservoir. Our simulations provide a direct view on the exchange of electron carriers, a key step of the photosynthesis machinery. PMID:28489071

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

NASA Astrophysics Data System (ADS)

Sugiyama, Hiroki; Kosugi, Toshihiko; Yokoyama, Haruki; Murata, Koichi; Yamane, Yasuro; Tokumitsu, Masami; Enoki, Takatomo

2008-04-01

This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on- and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ( fT) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.

PubMed

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L; Banyai, Douglas; Savaikar, Madhusudan A; Jaszczak, John A; Yap, Yoke Khin

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

A voltage-dependent chloride channel fine-tunes photosynthesis in plants

PubMed Central

Herdean, Andrei; Teardo, Enrico; Nilsson, Anders K.; Pfeil, Bernard E.; Johansson, Oskar N.; Ünnep, Renáta; Nagy, Gergely; Zsiros, Ottó; Dana, Somnath; Solymosi, Katalin; Garab, Győző; Szabó, Ildikó; Spetea, Cornelia; Lundin, Björn

2016-01-01

In natural habitats, plants frequently experience rapid changes in the intensity of sunlight. To cope with these changes and maximize growth, plants adjust photosynthetic light utilization in electron transport and photoprotective mechanisms. This involves a proton motive force (PMF) across the thylakoid membrane, postulated to be affected by unknown anion (Cl−) channels. Here we report that a bestrophin-like protein from Arabidopsis thaliana functions as a voltage-dependent Cl− channel in electrophysiological experiments. AtVCCN1 localizes to the thylakoid membrane, and fine-tunes PMF by anion influx into the lumen during illumination, adjusting electron transport and the photoprotective mechanisms. The activity of AtVCCN1 accelerates the activation of photoprotective mechanisms on sudden shifts to high light. Our results reveal that AtVCCN1, a member of a conserved anion channel family, acts as an early component in the rapid adjustment of photosynthesis in variable light environments. PMID:27216227

Implementation of controlled quantum teleportation with an arbitrator for secure quantum channels via quantum dots inside optical cavities.

PubMed

Heo, Jino; Hong, Chang-Ho; Kang, Min-Sung; Yang, Hyeon; Yang, Hyung-Jin; Hong, Jong-Phil; Choi, Seong-Gon

2017-11-02

We propose a controlled quantum teleportation scheme to teleport an unknown state based on the interactions between flying photons and quantum dots (QDs) confined within single- and double-sided cavities. In our scheme, users (Alice and Bob) can teleport the unknown state through a secure entanglement channel under the control and distribution of an arbitrator (Trent). For construction of the entanglement channel, Trent utilizes the interactions between two photons and the QD-cavity system, which consists of a charged QD (negatively charged exciton) inside a single-sided cavity. Subsequently, Alice can teleport the unknown state of the electron spin in a QD inside a double-sided cavity to Bob's electron spin in a QD inside a single-sided cavity assisted by the channel information from Trent. Furthermore, our scheme using QD-cavity systems is feasible with high fidelity, and can be experimentally realized with current technologies.

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

NASA Astrophysics Data System (ADS)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

A multi-channel isolated power supply in non-equipotential circuit

NASA Astrophysics Data System (ADS)

Li, Xiang; Zhao, Bo-Wen; Zhang, Yan-Chi; Xie, Da

2018-04-01

A multi-channel isolation power supply is designed for the problems of different MOSFET or IGBT in the non-equipotential circuit in this paper. It mainly includes the square wave generation circuit, the high-frequency transformer and the three-terminal stabilized circuit. The first part is used to generate the 24V square wave, and as the input of the magnetic ring transformer. In the second part, the magnetic ring transformer consists of one input and three outputs to realize multi-channel isolation output. The third part can output different potential and realize non-equal potential function through the three-terminal stabilized chip. In addition, the multi-channel isolation power source proposed in this paper is Small size, high reliability and low price, and it is convenient for power electronic switches that operate on multiple different potentials. Therefore, the research on power supply of power electronic circuit has practical significance.

Shielded serpentine traveling wave tube deflection structure

DOEpatents

Hudson, C.L.; Spector, J.

1994-12-27

A shielded serpentine slow wave deflection structure is disclosed having a serpentine signal conductor within a channel groove. The channel groove is formed by a serpentine channel in a trough plate and a ground plane. The serpentine signal conductor is supported at its ends by coaxial feed through connectors. A beam interaction trough intersects the channel groove to form a plurality of beam interaction regions wherein an electron beam may be deflected relative to the serpentine signal conductor. 4 figures.

Relativistic Channeling of a Picosecond Laser Pulse in a Near-Critical Preformed Plasma

NASA Astrophysics Data System (ADS)

Borghesi, M.; MacKinnon, A. J.; Barringer, L.; Gaillard, R.; Gizzi, L. A.; Meyer, C.; Willi, O.; Pukhov, A.; Meyer-Ter-Vehn, J.

1997-02-01

Relativistic self-channeling of a picosecond laser pulse in a preformed plasma near critical density has been observed both experimentally and in 3D particle-in-cell simulations. Optical probing measurements indicate the formation of a single pulsating propagation channel, typically of about 5 μm in diameter. The computational results reveal the importance in the channel formation of relativistic electrons traveling with the light pulse and of the corresponding self-generated magnetic field.

Multiplexing readout channels in proportional counters

NASA Technical Reports Server (NTRS)

Caristi, James

1991-01-01

Proportional counters are important instruments used in sensing hard x-rays. The possibility is described of doubling the number of readout channels in the detector without increasing the electronics needed to amplify channel signals. This suggests that it should be possible, conversely, to reduce the number of amplifiers, thereby reducing the weight and energy budget of the instrument. Various numerical multiplexing schemes are analyzed, and a computer program is presented that can reconstruct multiplexed channel outputs with very good accuracy.

The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal

NASA Astrophysics Data System (ADS)

Mikšová, R.; Macková, A.; Malinský, P.

2017-09-01

We have measured the electronic stopping powers of helium and lithium ions in the channelling direction of the Si〈1 0 0〉 crystal. The energy range used (2.0-8.0 MeV) was changed by 200 and 400-keV steps. The ratio α between the channelling and random stopping powers was determined as a function of the angle for 2, 3 and 4 MeV 4He+ ions and for 3 and 6 MeV 7Li+,2+ ions. The measurements were carried out using the Rutherford backscattering spectrometry in the channelling mode (RBS-C) in a silicon-on-insulator material. The experimental channelling stopping-power values measured in the channelling direction were then discussed in the frame of the random energy stopping predictions calculated using SRIM-2013 code and the theoretical unitary convolution approximation (UCA) model. The experimental channelling stopping-power values decrease with increasing ion energy. The stopping-power difference between channelled and randomly moving ions increases with the enhanced initial ion energy. The ratio between the channelling and random ion stopping powers α as a function of the ion beam incoming angle for 2, 3 and 4 MeV He+ ions and for 3 and 6 MeV Li+,2+ ions was observed in the range 0.5-1.

Cross-flow electrochemical reactor cells, cross-flow reactors, and use of cross-flow reactors for oxidation reactions

DOEpatents

Balachandran, Uthamalingam; Poeppel, Roger B.; Kleefisch, Mark S.; Kobylinski, Thaddeus P.; Udovich, Carl A.

1994-01-01

This invention discloses cross-flow electrochemical reactor cells containing oxygen permeable materials which have both electron conductivity and oxygen ion conductivity, cross-flow reactors, and electrochemical processes using cross-flow reactor cells having oxygen permeable monolithic cores to control and facilitate transport of oxygen from an oxygen-containing gas stream to oxidation reactions of organic compounds in another gas stream. These cross-flow electrochemical reactors comprise a hollow ceramic blade positioned across a gas stream flow or a stack of crossed hollow ceramic blades containing a channel or channels for flow of gas streams. Each channel has at least one channel wall disposed between a channel and a portion of an outer surface of the ceramic blade, or a common wall with adjacent blades in a stack comprising a gas-impervious mixed metal oxide material of a perovskite structure having electron conductivity and oxygen ion conductivity. The invention includes reactors comprising first and second zones seprated by gas-impervious mixed metal oxide material material having electron conductivity and oxygen ion conductivity. Prefered gas-impervious materials comprise at least one mixed metal oxide having a perovskite structure or perovskite-like structure. The invention includes, also, oxidation processes controlled by using these electrochemical reactors, and these reactions do not require an external source of electrical potential or any external electric circuit for oxidation to proceed.

Investigation of the Electromagnetic Radiation Emitted by Sub-GeV Electrons in a Bent Crystal.

PubMed

Bandiera, L; Bagli, E; Germogli, G; Guidi, V; Mazzolari, A; Backe, H; Lauth, W; Berra, A; Lietti, D; Prest, M; De Salvador, D; Vallazza, E; Tikhomirov, V

2015-07-10

The radiation emitted by 855 MeV electrons via planar channeling and volume reflection in a 30.5-μm-thick bent Si crystal has been investigated at the MAMI (Mainzer Mikrotron) accelerator. The spectral intensity was much more intense than for an equivalent amorphous material, and peaked in the MeV range in the case of channeling radiation. Differently from a straight crystal, also for an incidence angle larger than the Lindhard angle, the spectral intensity remains nearly as high as for channeling. This is due to volume reflection, for which the intensity remains high at a large incidence angle over the whole angular acceptance, which is equal to the bending angle of the crystal. Monte Carlo simulations demonstrated that incoherent scattering significantly influences both the radiation spectrum and intensity, either for channeling or volume reflection. In the latter case, it has been shown that incoherent scattering increases the radiation intensity due to the contribution of volume-captured particles. As a consequence, the experimental spectrum becomes a mixture of channeling and pure volume reflection radiations. These results allow a better understanding of the radiation emitted by electrons subjected to coherent interactions in bent crystals within a still-unexplored energy range, which is relevant for possible applications for innovative and compact x-ray or γ-ray sources.

Direct cooled power electronics substrate

DOEpatents

Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

2010-09-14

The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

Simulation of cooling efficiency via miniaturised channels in multilayer LTCC for power electronics

NASA Astrophysics Data System (ADS)

Pietrikova, Alena; Girasek, Tomas; Lukacs, Peter; Welker, Tilo; Müller, Jens

2017-03-01

The aim of this paper is detailed investigation of thermal resistance, flow analysis and distribution of coolant as well as thermal distribution inside multilayer LTCC substrates with embedded channels for power electronic devices by simulation software. For this reason four various structures of internal channels in the multilayer LTCC substrates were designed and simulated. The impact of the volume flow, structures of channels, and power loss of chip was simulated, calculated and analyzed by using the simulation software Mentor Graphics FloEFDTM. The structure, size and location of channels have the significant impact on thermal resistance, pressure of coolant as well as the effectivity of cooling power components (chips) that can be placed on the top of LTCC substrate. The main contribution of this paper is thermal analyze, optimization and impact of 4 various cooling channels embedded in LTCC multilayer structure. Paper investigate, the effect of volume flow in cooling channels for achieving the least thermal resistance of LTCC substrate that is loaded by power thermal chips. Paper shows on the impact of the first chips thermal load on the second chip as well as. This possible new technology could ensure in the case of practical realization effective cooling and increasing reliability of high power modules.

Quasi-four-particle first-order Faddeev-Watson-Lovelace terms in proton-helium scattering

NASA Astrophysics Data System (ADS)

Safarzade, Zohre; Akbarabadi, Farideh Shojaei; Fathi, Reza; Brunger, Michael J.; Bolorizadeh, Mohammad A.

2017-06-01

The Faddeev-Watson-Lovelace equations, which are typically used for solving three-particle scattering problems, are based on the assumption of target having one active electron while the other electrons remain passive during the collision process. So, in the case of protons scattering from helium or helium-like targets, in which there are two bound-state electrons, the passive electron has a static role in the collision channel to be studied. In this work, we intend to assign a dynamic role to all the target electrons, as they are physically active in the collision. By including an active role for the second electron in proton-helium-like collisions, a new form of the Faddeev-Watson-Lovelace integral equations is needed, in which there is no disconnected kernel. We consider the operators and the wave functions associated with the electrons to obey the Pauli exclusion principle, as the electrons are indistinguishable. In addition, a quasi-three-particle collision is assumed in the initial channel, where the electronic cloud is represented as a single identity in the collision.

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

Signal processing and electronic noise in LZ

NASA Astrophysics Data System (ADS)

Khaitan, D.

2016-03-01

The electronics of the LUX-ZEPLIN (LZ) experiment, the 10-tonne dark matter detector to be installed at the Sanford Underground Research Facility (SURF), consists of low-noise dual-gain amplifiers and a 100-MHz, 14-bit data acquisition system for the TPC PMTs. Pre-prototypes of the analog amplifiers and the 32-channel digitizers were tested extensively with simulated pulses that are similar to the prompt scintillation light and the electroluminescence signals expected in LZ. These studies are used to characterize the noise and to measure the linearity of the system. By increasing the amplitude of the test signals, the effect of saturating the amplifier and the digitizers was studied. The RMS ADC noise of the digitizer channels was measured to be 1.19± 0.01 ADCC. When a high-energy channel of the amplifier is connected to the digitizer, the measured noise remained virtually unchanged, while the noise added by a low-energy channel was estimated to be 0.38 ± 0.02 ADCC (46 ± 2 μV). A test facility is under construction to study saturation, mitigate noise and measure the performance of the LZ electronics and data acquisition chain.

Microfluidic CODES: a scalable multiplexed electronic sensor for orthogonal detection of particles in microfluidic channels.

PubMed

Liu, Ruxiu; Wang, Ningquan; Kamili, Farhan; Sarioglu, A Fatih

2016-04-21

Numerous biophysical and biochemical assays rely on spatial manipulation of particles/cells as they are processed on lab-on-a-chip devices. Analysis of spatially distributed particles on these devices typically requires microscopy negating the cost and size advantages of microfluidic assays. In this paper, we introduce a scalable electronic sensor technology, called microfluidic CODES, that utilizes resistive pulse sensing to orthogonally detect particles in multiple microfluidic channels from a single electrical output. Combining the techniques from telecommunications and microfluidics, we route three coplanar electrodes on a glass substrate to create multiple Coulter counters producing distinct orthogonal digital codes when they detect particles. We specifically design a digital code set using the mathematical principles of Code Division Multiple Access (CDMA) telecommunication networks and can decode signals from different microfluidic channels with >90% accuracy through computation even if these signals overlap. As a proof of principle, we use this technology to detect human ovarian cancer cells in four different microfluidic channels fabricated using soft lithography. Microfluidic CODES offers a simple, all-electronic interface that is well suited to create integrated, low-cost lab-on-a-chip devices for cell- or particle-based assays in resource-limited settings.

Analyses of electron runaway in front of the negative streamer channel

NASA Astrophysics Data System (ADS)

Babich, L. P.; Bochkov, E. I.; Kutsyk, I. M.; Neubert, T.; Chanrion, O.

2017-08-01

X-ray and γ-ray emissions, observed in correlation with negative leaders of lightning and long sparks of high-voltage laboratory experiments, are conventionally connected with the bremsstrahlung of high-energy runaway electrons (REs). Here we extend a focusing mechanism, analyzed in our previous paper, which allows the electric field to reach magnitudes, required for a generation of significant RE fluxes and associated bremsstrahlung, when the ionization wave propagates in a narrow, ionized channel created by a previous streamer. Under such conditions we compute the production rate of REs per unit streamer length as a function of the streamer velocity and predict that, once a streamer is formed with the electric field capable of producing REs ahead of the streamer front, the ionization induced by the REs is capable of creating an ionized channel that allows for self-sustained propagation of the RE-emitting ionization wave independent of the initial electron concentration. Thus, the streamer coronas of the leaders are probable sources of REs producing the observed high-energy radiation. To prove these predictions, new simulations are planned, which would show explicitly that the preionization in front of the channel via REs will lead to the ionization wave propagation self-consistent with RE generation.

Performance of the Low-Jitter High-Gain/Bandwidth Front-End Electronics of the HADES tRPC Wall

NASA Astrophysics Data System (ADS)

Belver, Daniel; Cabanelas, P.; Castro, E.; Garzon, J. A.; Gil, A.; Gonzalez-Diaz, D.; Koenig, W.; Traxler, M.

2010-10-01

A front-end electronics (FEE) chain for accurate time measurements has been developed for the new Resistive Plate Chamber (RPC)-based Time-of-Flight (TOF) wall of the High Acceptance Di-Electron Spectrometer (HADES). The wall covers an area of around 8 m2, divided in 6 sectors. In total, 1122 4-gap timing RPC cells are read-out by 2244 time and charge sensitive channels. The FEE chain consists of 2 custom-made boards: a 4-channel DaughterBOard (DBO) and a 32-channel MotherBOard (MBO). The DBO uses a fast 2 GHz amplifier feeding a dual high-speed discriminator. The time and charge information are encoded, respectively, in the leading edge and the width of an LVDS signal. Each MBO houses up to 8 DBOs providing them regulated voltage supply, threshold values via DACs, test signals and, additionally, routing out a signal proportional to the channel multiplicity needed for a 1st level trigger decision. The MBO delivers LVDS signals to a multi-purpose Trigger Readout Board (TRB) for data acquisition. The FEE allows achieving a system resolution around 75 ps fulfilling comfortably the requirements of the HADES upgrade .

Study on the influences of ionization region material arrangement on Hall thruster channel discharge characteristics

NASA Astrophysics Data System (ADS)

Xiang, HU; Ping, DUAN; Jilei, SONG; Wenqing, LI; Long, CHEN; Xingyu, BIAN

2018-02-01

There exists strong interaction between the plasma and channel wall in the Hall thruster, which greatly affects the discharge performance of the thruster. In this paper, a two-dimensional physical model is established based on the actual size of an Aton P70 Hall thruster discharge channel. The particle-in-cell simulation method is applied to study the influences of segmented low emissive graphite electrode biased with anode voltage on the discharge characteristics of the Hall thruster channel. The influences of segmented electrode placed at the ionization region on electric potential, ion number density, electron temperature, ionization rate, discharge current and specific impulse are discussed. The results show that, when segmented electrode is placed at the ionization region, the axial length of the acceleration region is shortened, the equipotential lines tend to be vertical with wall at the acceleration region, thus radial velocity of ions is reduced along with the wall corrosion. The axial position of the maximal electron temperature moves towards the exit with the expansion of ionization region. Furthermore, the electron-wall collision frequency and ionization rate also increase, the discharge current decreases and the specific impulse of the Hall thruster is slightly enhanced.

Ionic channels: natural nanotubes described by the drift diffusion equations

NASA Astrophysics Data System (ADS)

Eisenberg, Bob

2000-05-01

Ionic channels are a large class of proteins with holes down their middle that control a wide range of cellular functions important in health and disease. Ionic channels can be analysed using a combination of the Poisson and drift diffusion equations familiar from computational electronics because their behavior is dominated by the electrical properties of their simple structure.

Photoinduced electron transfer and fluorophore motion as a probe of the conformational dynamics of membrane proteins: application to the influenza a M2 proton channel.

PubMed

Rogers, Julie M G; Polishchuk, Alexei L; Guo, Lin; Wang, Jun; DeGrado, William F; Gai, Feng

2011-04-05

The structure and function of the influenza A M2 proton channel have been the subject of intensive investigations in recent years because of their critical role in the life cycle of the influenza virus. Using a truncated version of the M2 proton channel (i.e., M2TM) as a model, here we show that fluctuations in the fluorescence intensity of a dye reporter that arise from both fluorescence quenching via the mechanism of photoinduced electron transfer (PET) by an adjacent tryptophan (Trp) residue and local motions of the dye molecule can be used to probe the conformational dynamics of membrane proteins. Specifically, we find that the dynamics of the conformational transition between the N-terminal open and C-terminal open states of the M2TM channel occur on a timescale of about 500 μs and that the binding of either amantadine or rimantadine does not inhibit the pH-induced structural equilibrium of the channel. These results are consistent with the direct occluding mechanism of inhibition which suggests that the antiviral drugs act by sterically occluding the channel pore.

Nicotinic receptor transduction zone: invariant arginine couples to multiple electron-rich residues.

PubMed

Mukhtasimova, Nuriya; Sine, Steven M

2013-01-22

Gating of the muscle-type acetylcholine receptor (AChR) channel depends on communication between the ACh-binding site and the remote ion channel. A key region for this communication is located within the structural transition zone between the ligand-binding and pore domains. Here, stemming from β-strand 10 of the binding domain, the invariant αArg209 lodges within the hydrophobic interior of the subunit and is essential for rapid and efficient channel gating. Previous charge-reversal experiments showed that the contribution of αArg209 to channel gating depends strongly on αGlu45, also within this region. Here we determine whether the contribution of αArg209 to channel gating depends on additional anionic or electron-rich residues in this region. Also, to reconcile diverging findings in the literature, we compare the dependence of αArg209 on αGlu45 in AChRs from different species, and compare the full agonist ACh with the weak agonist choline. Our findings reveal that the contribution of αArg209 to channel gating depends on additional nearby electron-rich residues, consistent with both electrostatic and steric contributions. Furthermore, αArg209 and αGlu45 show a strong interdependence in both human and mouse AChRs, whereas the functional consequences of the mutation αE45R depend on the agonist. The emerging picture shows a multifaceted network of interdependent residues that are required for communication between the ligand-binding and pore domains. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Microstructure refinement of cold-sprayed copper investigated by electron channeling contrast imaging.

PubMed

Zhang, Yinyin; Brodusch, Nicolas; Descartes, Sylvie; Chromik, Richard R; Gauvin, Raynald

2014-10-01

The electron channeling contrast imaging technique was used to investigate the microstructure of copper coatings fabricated by cold gas dynamic spray. The high velocity impact characteristics for cold spray led to the formation of many substructures, such as high density dislocation walls, dislocation cells, deformation twins, and ultrafine equiaxed subgrains/grains. A schematic model is proposed to explain structure refinement of Cu during cold spray, where an emphasis is placed on the role of dislocation configurations and twinning.

The Effects of Channel Curvature and Protrusion Height on Nucleate Boiling and the Critical Heat Flux of a Simulated Electronic Chip

DTIC Science & Technology

1994-05-01

parameters and geometry factor. 57 3.2 Laminar sublayer and buffer layer thicknesses for geometry of Mudawar and Maddox.ŝ 68 3.3 Correlation constants...transfer from simulated electronic chip heat sources that are flush with the flow channel wall. Mudawar and Maddox2" have studied enhanced surfaces...bias error was not estimated; however, the percentage of heat loss measured compares with that previously reported by Mudawar and Maddox19 for a

Multiplexing of Radio-Frequency Single Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, Thomas R.; Pellerano, F. A.; Stahle, C. M.; Aidala, K.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2001-01-01

We present results on wavelength division multiplexing of radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

BCM-2.0 - The new version of computer code ;Basic Channeling with Mathematica©;

NASA Astrophysics Data System (ADS)

Abdrashitov, S. V.; Bogdanov, O. V.; Korotchenko, K. B.; Pivovarov, Yu. L.; Rozhkova, E. I.; Tukhfatullin, T. A.; Eikhorn, Yu. L.

2017-07-01

The new symbolic-numerical code devoted to investigation of the channeling phenomena in periodic potential of a crystal has been developed. The code has been written in Wolfram Language taking advantage of analytical programming method. Newly developed different packages were successfully applied to simulate scattering, radiation, electron-positron pair production and other effects connected with channeling of relativistic particles in aligned crystal. The result of the simulation has been validated against data from channeling experiments carried out at SAGA LS.

Secondary electrons induced by fast ions under channeling conditions. II. Screening of fast heavy ions in solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudo, H.; Shima, K.; Seki, S.

1991-06-01

Ion-beam shadowing effects have been observed for secondary electrons induced by various ions in the energy range of 1.8--3.8 MeV/amu, under various channeling conditions in Si and GaAs crystals. From a comparison of the energy spectra of electrons induced by ions of equal velocity, we have found reduced shadowing effects for heavy ions (Si, S, and Cl) as compared with light (H, He, C, and O) ions. It is concluded that the reduction results from the screening of the heavy ion's nuclear charge by bound electrons. By analyzing the reduced shadowing effect, the effective nuclear charges for the heavy ionsmore » within the target crystals have been determined.« less

Accurate atomistic first-principles calculations of electronic stopping

DOE PAGES

Schleife, André; Kanai, Yosuke; Correa, Alfredo A.

2015-01-20

In this paper, we show that atomistic first-principles calculations based on real-time propagation within time-dependent density functional theory are capable of accurately describing electronic stopping of light projectile atoms in metal hosts over a wide range of projectile velocities. In particular, we employ a plane-wave pseudopotential scheme to solve time-dependent Kohn-Sham equations for representative systems of H and He projectiles in crystalline aluminum. This approach to simulate nonadiabatic electron-ion interaction provides an accurate framework that allows for quantitative comparison with experiment without introducing ad hoc parameters such as effective charges, or assumptions about the dielectric function. Finally, our work clearlymore » shows that this atomistic first-principles description of electronic stopping is able to disentangle contributions due to tightly bound semicore electrons and geometric aspects of the stopping geometry (channeling versus off-channeling) in a wide range of projectile velocities.« less

Variations in contrast of scanning electron microscope images for microstructure analysis of Si-based semiconductor materials.

PubMed

Itakura, Masaru; Kuwano, Noriyuki; Sato, Kaoru; Tachibana, Shigeaki

2010-08-01

Image contrasts of Si-based semiconducting materials have been investigated by using the latest scanning electron microscope with various detectors under a range of experimental conditions. Under a very low accelerating voltage (500 V), we obtained a good image contrast between crystalline SiGe whiskers and the amorphous matrix using an in-lens secondary electron (SE) detector, while the conventional topographic SE image and the compositional backscattered electron (BSE) image gave no distinct contrast. By using an angular-selective BSE (AsB) detector for wide-angle scattered BSE, on the other hand, the crystal grains in amorphous matrix can be clearly visualized as 'channelling contrast'. The image contrast is very similar to that of their transmission electron microscope image. The in-lens SE (true SE falling dots SE1) and the AsB (channelling) contrasts are quite useful to distinguish crystalline parts from amorphous ones.

Evidence for hydrodynamic electron flow in PdCoO₂.

PubMed

Moll, Philip J W; Kushwaha, Pallavi; Nandi, Nabhanila; Schmidt, Burkhard; Mackenzie, Andrew P

2016-03-04

Electron transport is conventionally determined by the momentum-relaxing scattering of electrons by the host solid and its excitations. Hydrodynamic fluid flow through channels, in contrast, is determined partly by the viscosity of the fluid, which is governed by momentum-conserving internal collisions. A long-standing question in the physics of solids has been whether the viscosity of the electron fluid plays an observable role in determining the resistance. We report experimental evidence that the resistance of restricted channels of the ultrapure two-dimensional metal palladium cobaltate (PdCoO2) has a large viscous contribution. Comparison with theory allows an estimate of the electronic viscosity in the range between 6 × 10(-3) kg m(-1) s(-1) and 3 × 10(-4) kg m(-1) s(-1), versus 1 × 10(-3) kg m(-1) s(-1) for water at room temperature. Copyright © 2016, American Association for the Advancement of Science.

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

Ultraviolet-enhanced photodetection in a graphene/SiO{sub 2}/Si capacitor structure with a vacuum channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Myungji; Kim, Hong Koo, E-mail: hkk@pitt.edu

2015-09-14

We report photodetection properties of a graphene/oxide/silicon capacitor structure with a nanoscale vacuum channel. The photogenerated two-dimensional electron gas (2DEG) inversion charges at SiO{sub 2}/Si interface are extracted out to air and transported along the void channel at low bias voltage (<5 V). A monolayer graphene, placed on top of SiO{sub 2} and suspended on the void channel, is utilized as a photon-transparent counter-electrode to the 2DEG layer and a collector electrode for the out-of-plane transported electrons, respectively. The photocurrent extracted through a void channel reveals high responsivity (1.0 A/W at 633 nm) as measured in a broad spectral range (325–1064 nm), especially demonstratingmore » a UV-enhanced performance (0.43 A/W responsivity and 384% internal quantum efficiency at 325 nm). The mechanisms underlying photocarrier generation, emission, and transport in a suspended-graphene/SiO{sub 2}/Si structure are proposed.« less

Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory

NASA Astrophysics Data System (ADS)

Choe, Byeong-In; Park, Byung-Gook; Lee, Jong-Ho

2013-06-01

The program disturbance characteristic in the three-dimensional (3D) stack NAND flash was analyzed for the first time in terms of string select line (SSL) threshold voltage (Vth) and p-type body doping profile. From the edge word line (W/L) program disturbance, we can observe the boosted channel potential loss as a function of SSL Vth and body doping profile for SSL device. According to simulation work, a high Vth of the SSL device is required to suppress channel leakage during programming. When the body doping of the SSL device is high in the channel, there is a large band bending near the gate edge of the SSL adjacent to the edge W/L cell of boosted cell strings, which generates significantly electron-hole pairs. The generated electrons decreases the boosted channel potential, resulting in increase of program disturbance of the inhibit strings. Through optimization of the body doping profile of the SSL device, both channel leakage and the program disturbance are successfully suppressed for a highly reliable 3D stack NAND flash memory cell operation.

Relativistic-electron-beam/target interaction in plasma channels

NASA Astrophysics Data System (ADS)

Halbleib, J. A., Sr.; Wright, T. P.

1980-08-01

A model describing the transport of relativistic electron beams in plasma channels and their subsequent interaction with solid targets is developed and applied to single-beam and multiple-beam configurations. For single beams the targets consist of planar tantalum foils and, in some cases, cusp fields on the transmission side of the foils are employed to improve beam/target coupling efficiency. In the multi-beam configurations, several beams are arranged in wagon-wheel fashion so as to converge upon cylindrical targets, consisting of either hollow tantalum or solid graphite cylinders, located at the hub. For 0.3-cm beam radii that are less than or equal to the channel radii, mean specific power depositions up to about 17 TW/g per MA of injected beam current are obtained for single beams; 12-beam results are typically an order-of-magnitude less. The corresponding enhancements are up to five times the collisional stopping power for either single or multiple beams. Substantial improvement is predicted for the multi-beam interaction should future channel technology permit transport at higher current densities in smaller channels.

Manipulating quantum coherence of charge states in interacting double-dot Aharonov–Bohm interferometers

NASA Astrophysics Data System (ADS)

Jin, Jinshuang; Wang, Shikuan; Zhou, Jiahuan; Zhang, Wei-Min; Yan, YiJing

2018-04-01

We investigate the dynamics of charge-state coherence in a degenerate double-dot Aharonov–Bohm interferometer with finite inter-dot Coulomb interactions. The quantum coherence of the charge states is found to be sensitive to the transport setup configurations, involving both the single-electron impurity channels and the Coulomb-assisted ones. We numerically demonstrate the emergence of a complete coherence between the two charge states, with the relative phase being continuously controllable through the magnetic flux. Interestingly, a fully coherent charge qubit arises at the double-dots electron pair tunneling resonance condition, where the chemical potential of one electrode is tuned at the center between a single-electron impurity channel and the related Coulomb-assisted channel. This pure quantum state of charge qubit could be experimentally realized at the current–voltage characteristic turnover position, where differential conductance sign changes. We further elaborate the underlying mechanism for both the real-time and the stationary charge-states coherence in the double-dot systems of study.

Numerical study of the generation of runaway electrons in a gas diode with a hot channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lisenkov, V. V., E-mail: lisenkov@iep.uran.ru; Ural Federal University, 19 Mira St., Ekaterinburg 620002; Shklyaev, V. A., E-mail: shklyaev@to.hcei.tsc.ru

2015-11-15

A new method for increasing the efficiency of runaway electron beam generation in atmospheric pressure gas media has been suggested and theoretically proved. The method consists of creating a hot region (e.g., a spark channel or a laser plume) with a decreased numerical density of gas molecules (N) near the cathode. In this method, the ratio E/N (E—electric field strength) is increased by decreasing N instead of increasing E, as has been done in the past. The numerical model that is used allows the simultaneous calculation of the formation of a subnanosecond gas discharge and the generation of runaway electronsmore » in gas media. The calculations have demonstrated the possibility of obtaining current pulses of runaway electrons with amplitudes of hundred of amperes and durations of more than 100 ps. The influence of the hot channel geometry on the parameters of the generated beam has been investigated.« less

Magnetic mirror effect in a cylindrical Hall thruster

NASA Astrophysics Data System (ADS)

Jiang, Yiwei; Tang, Haibin; Ren, Junxue; Li, Min; Cao, Jinbin

2018-01-01

For cylindrical Hall thrusters, the magnetic field geometry is totally different from that in conventional Hall thrusters. In this study, we investigate the magnetic mirror effect in a fully cylindrical Hall thruster by changing the number of iron rings (0-5), which surround the discharge channel wall. The plasma properties inside the discharge channel and plume area are simulated with a self-developed PIC-MCC code. The numerical results show significant influence of magnetic geometry on the electron confinement. With the number of rings increasing above three, the near-wall electron density gap is reduced, indicating the suppression of neutral gas leakage. The electron temperature inside the discharge channel reaches its peak (38.4 eV) when the magnetic mirror is strongest. It is also found that the thruster performance has strong relations with the magnetic mirror as the propellant utilisation efficiency reaches the maximum (1.18) at the biggest magnetic mirror ratio. Also, the optimal magnetic mirror improves the multi-charged ion dynamics, including the ion production and propellant utilisation efficiency.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

PubMed Central

Park, Steve; Giri, Gaurav; Shaw, Leo; Pitner, Gregory; Ha, Jewook; Koo, Ja Hoon; Gu, Xiaodan; Park, Joonsuk; Lee, Tae Hoon; Nam, Ji Hyun; Hong, Yongtaek; Bao, Zhenan

2015-01-01

The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost large-area electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed “controlled OSC nucleation and extension for circuits” (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit half-adder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication. PMID:25902502

A background correction algorithm for Van Allen Probes MagEIS electron flux measurements

DOE PAGES

Claudepierre, S. G.; O'Brien, T. P.; Blake, J. B.; ...

2015-07-14

We describe an automated computer algorithm designed to remove background contamination from the Van Allen Probes Magnetic Electron Ion Spectrometer (MagEIS) electron flux measurements. We provide a detailed description of the algorithm with illustrative examples from on-orbit data. We find two primary sources of background contamination in the MagEIS electron data: inner zone protons and bremsstrahlung X-rays generated by energetic electrons interacting with the spacecraft material. Bremsstrahlung X-rays primarily produce contamination in the lower energy MagEIS electron channels (~30–500 keV) and in regions of geospace where multi-M eV electrons are present. Inner zone protons produce contamination in all MagEIS energymore » channels at roughly L < 2.5. The background-corrected MagEIS electron data produce a more accurate measurement of the electron radiation belts, as most earlier measurements suffer from unquantifiable and uncorrectable contamination in this harsh region of the near-Earth space environment. These background-corrected data will also be useful for spacecraft engineering purposes, providing ground truth for the near-Earth electron environment and informing the next generation of spacecraft design models (e.g., AE9).« less

X-Ray Laser

DTIC Science & Technology

1991-01-31

Reflection in Relativistic Electron Beam Channel Radiation Systems, IEEE Trans. on Plasma Science 16(5), 548 (1988). 3. M. Strauss, P. Amendt, N...Reduced Radiation Losses in a Channeled-Beam X-Ray Laser by Bragg Reflection Coupling, Phys. Rev. A 39(11), 5791 (1989). 6. M. Strauss and N. Rostoker... Radiation Guiding in Channeling Beam X-Ray Laser by Bragg Reflection Coupling, Phys. Rev. A 40(12), 7097 (1989). 91-00870111 llllltl

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

Study of a contracted glow in low-frequency plasma-jet discharges operating with argon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minotti, F.; Giuliani, L.; Xaubet, M.

2015-11-15

In this work, we present an experimental and theoretical study of a low frequency, atmospheric plasma-jet discharge in argon. The discharge has the characteristics of a contracted glow with a current channel of submillimeter diameter and a relatively high voltage cathode layer. In order to interpret the measurements, we consider the separate modeling of each region of the discharge: main channel and cathode layer, which must then be properly matched together. The main current channel was modeled, extending a previous work, as similar to an arc in which joule heating is balanced by lateral heat conduction, without thermal equilibrium betweenmore » electrons and heavy species. The cathode layer model, on the other hand, includes the emission of secondary electrons by ion impact and by additional mechanisms, of which we considered emission due to collision of atoms excited at metastable levels, and field-enhanced thermionic emission (Schottky effect). The comparison of model and experiment indicates that the discharge can be effectively sustained in its contracted form by the secondary electrons emitted by collision of excited argon atoms, whereas thermionic emission is by far insufficient to provide the necessary electrons.« less

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence onmore » the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.« less

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Microelectronic bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1976-01-01

Progress was made in the development of an RF cage, a single channel RF powered ECG telemetry system, and a three channel RF powered ECG, aortic blood pressure, and body temperature telemetry system. Encapsulation materials for chronic implantation of electronic circuits in the body were also evaluated.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

Al2O3), silicon carbide ( SiC ) and graphite (C). The significant differences being ion bombardment sputter yield and secondary electron emission...channel cross-section is radially symmetric about ( mirrored above and below) discharge channel centerline from the anode to the exit plane, whereas

Clock and trigger synchronization between several chassis of digital data acquisition modules

NASA Astrophysics Data System (ADS)

Hennig, W.; Tan, H.; Walby, M.; Grudberg, P.; Fallu-Labruyere, A.; Warburton, W. K.; Vaman, C.; Starosta, K.; Miller, D.

2007-08-01

In applications with segmented high purity Ge detectors or other detector arrays with tens or hundreds of channels, the high development cost and limited flexibility of application specific integrated circuits outweigh their benefits of low power and small size. The readout electronics typically consist of multi-channel data acquisition modules in a common chassis for power, clock and trigger distribution, and data readout. As arrays become larger and reach several hundred channels, the readout electronics have to be divided over several chassis, but still must maintain precise synchronization of clocks and trigger signals across all channels. This division becomes necessary not only because of limits given by the instrumentation standards on module size and chassis slot numbers, but also because data readout times increase when more modules share the same data bus and because power requirements approach the limits of readily available power supplies. In this paper, we present a method for distributing clocks and triggers between 4 PXI chassis containing DGF Pixie-16 modules with up to 226 acquisition channels per chassis. The data acquisition system is intended to instrument the over 600 channels of the SeGA detector array at the National Superconducting Cyclotron Laboratory. Our solution is designed to achieve synchronous acquisition of detector waveforms from all channels with a jitter of less than 1 ns, and can be extended to a larger number of chassis if desired.

Photodissociation of the carbon monoxide dication in the (3)Σ(-) manifold: Quantum control simulation towards the C(2+) + O channel.

PubMed

Vranckx, S; Loreau, J; Vaeck, N; Meier, C; Desouter-Lecomte, M

2015-10-28

The photodissociation and laser assisted dissociation of the carbon monoxide dication X(3)Π CO(2+) into the (3)Σ(-) states are investigated. Ab initio electronic structure calculations of the adiabatic potential energy curves, radial nonadiabatic couplings, and dipole moments for the X (3)Π state are performed for 13 excited (3)Σ(-) states of CO(2+). The photodissociation cross section, calculated by time-dependent methods, shows that the C(+) + O(+) channels dominate the process in the studied energy range. The carbon monoxide dication CO(2+) is an interesting candidate for control because it can be produced in a single, long lived, v = 0 vibrational state due to the instability of all the other excited vibrational states of the ground (3)Π electronic state. In a spectral range of about 25 eV, perpendicular transition dipoles couple this (3)Π state to a manifold of (3)Σ(-) excited states leading to numerous C(+) + O(+) channels and a single C(2+) + O channel. This unique channel is used as target for control calculations using local control theory. We illustrate the efficiency of this method in order to find a tailored electric field driving the photodissociation in a manifold of strongly interacting electronic states. The selected local pulses are then concatenated in a sequence inspired by the "laser distillation" strategy. Finally, the local pulse is compared with optimal control theory.

Influence Of Secondary Electrons Produced From Plasma Material Interaction In Presence Of Crossed Electric And Magnetic Fields

NASA Astrophysics Data System (ADS)

Sawlani, Kapil; Herzog, Joshua M.; Kwak, Joowon; Foster, John

2012-10-01

The electron energy distribution function (EEDF) plays a very important role in determining thruster efficiency as it determines various gas phase reaction rates. In Hall thrusters, secondary electron emission derived from the interaction of energetic electrons with ceramic channel surfaces influence the overall shape of the EEDF as well as determine the potential difference between the plasma and wall. The role of secondary electrons on the discharge operation of Hall thrusters is poorly understood. Experimentally, determining this effect is even more taxing as the secondary electron yield (SEY) varies drastically based on many parameters such as incident electron energies, flux and impact angle, and also on the surface properties such as temperature and roughness. The electron transport is also affected by the profile of the magnetic field, which is not uniform across the length of the accelerating channel. The goal of this work is to map out the variation of the EEDF and potential profile in response to the controlled introduction of secondary electrons. This data is expected to serve as a tool to validate and improve existing numerical models by providing boundary conditions and SEY for various situations that are encountered in Hall thrusters.

Ion and Electron Heating Characteristics of Magnetic Re- Connection in Mast Tokamak Merging Experiment

NASA Astrophysics Data System (ADS)

Tanabe, Hiroshi; Inomoto, Michiaki; Ono, Yasushi; Yamada, Takuma; Imazawa, Ryota; Cheng, Chio-Zong

2016-07-01

We present results of recent studies of high power heating of magnetic reconnection, the fundamental process of several astrophysical events such as solar flare, in the Mega Amp Spherical Tokamak (MAST) - the world largest merging experiment. In addition to the previously reported significant reconnection heating up to ˜1keV [1], detailed local profiles of electron and ion temperature have been measured using a ultra-fine 300 channel Ruby- and a 130 channel YAG-Thomson scattering and a new 32 channel ion Doppler tomography diagnostics [2]. 2D profile measurement of electron temperature revealed highly localized heating structure at the X point with the characteristic scale length of 0.02-0.05m0.3T), a thick layer of closed flux surface surrounding the current sheet sustains the temperature profile for longer time than the electron and ion energy relaxation time ˜4-10ms, finally forming triple peak structures of ion and electron temperatures at the X point and in the downstream. While the peak electron temperature at the X point increases with toroidal field, the bulk electron temperature and the ion temperature in the downstream are unaffected. [1] Y. Ono et.al., Plasma Phys. Control. Fusion 54, 124039 (2012) [2] H. Tanabe et. al., Nucl. Fusion 53, 093027 (2013). [3] H. Tanabe et.al., Phys. Rev. Lett. 115, 215004 (2015)

Control of Internal Transport Barriers in Magnetically Confined Fusion Plasmas

NASA Astrophysics Data System (ADS)

Panta, Soma; Newman, David; Sanchez, Raul; Terry, Paul

2016-10-01

In magnetic confinement fusion devices the best performance often involves some sort of transport barriers to reduce the energy and particle flow from core to edge. Those barriers create gradients in the temperature and density profiles. If gradients in the profiles are too steep that can lead to instabilities and the system collapses. Control of these barriers is therefore an important challenge for fusion devices (burning plasmas). In this work we focus on the dynamics of internal transport barriers. Using a simple 7 field transport model, extensively used for barrier dynamics and control studies, we explore the use of RF heating to control the local gradients and therefore the growth rates and shearing rates for barrier initiation and control in self-heated fusion plasmas. Ion channel barriers can be formed in self-heated plasmas with some NBI heating but electron channel barriers are very sensitive. They can be formed in self-heated plasmas with additional auxiliary heating i.e. NBI and radio-frequency(RF). Using RF heating on both electrons and ions at proper locations, electron channel barriers along with ion channel barriers can be formed and removed demonstrating a control technique. Investigating the role of pellet injection in controlling the barriers is our next goal. Work supported by DOE Grant DE-FG02-04ER54741.

Improvement of Nonlinearity Correction for BESIII ETOF Upgrade

NASA Astrophysics Data System (ADS)

Sun, Weijia; Cao, Ping; Ji, Xiaolu; Fan, Huanhuan; Dai, Hongliang; Zhang, Jie; Liu, Shubin; An, Qi

2015-08-01

An improved scheme to implement integral non-linearity (INL) correction of time measurements in the Beijing Spectrometer III Endcap Time-of-Flight (BESIII ETOF) upgrade system is presented in this paper. During upgrade, multi-gap resistive plate chambers (MRPC) are introduced as ETOF detectors which increases the total number of time measurement channels to 1728. The INL correction method adopted in BESIII TOF proved to be of limited use, because the sharply increased number of electronic channels required for reading out the detector strips degrade the system configuration efficiency severely. Furthermore, once installed into the spectrometer, BESIII TOF electronics do not support the TDCs' nonlinearity evaluation online. In this proposed method, INL data used for the correction algorithm are automatically imported from a non-volatile read-only memory (ROM) instead of from data acquisition software. This guarantees the real-time performance and system efficiency of the INL correction, especially for the ETOF upgrades with massive number of channels. Besides, a signal that is not synchronized to the system 41.65 MHz clock from BEPCII is sent to the frontend electronics (FEE) to simulate pseudo-random test pulses for the purpose of online nonlinearity evaluation. Test results show that the time measuring INL errors in one module with 72 channels can be corrected online and in real time.

Investigation of the transport shortfall in Alcator C-Mod L-mode plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, N. T.; White, A. E.; Greenwald, M.

2013-03-15

A so-called 'transport shortfall,' where ion and electron heat fluxes and turbulence are underpredicted by gyrokinetic codes, has been robustly identified in DIII-D L-mode plasmas for {rho}>0.55[T. L. Rhodes et al., Nucl. Fusion 51(6), 063022 (2011); and C. Holland et al., Phys. Plasmas 16(5), 052301 (2009)]. To probe the existence of a transport shortfall across different tokamaks, a dedicated scan of auxiliary heated L-mode discharges in Alcator C-Mod are studied in detail with nonlinear gyrokinetic simulations for the first time. Two discharges, only differing by the amount of auxiliary heating are investigated using both linear and nonlinear simulation of themore » GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)]. Nonlinear gyrokinetic simulation of the low and high input power discharges reveals a discrepancy between simulation and experiment in only the electron heat flux channel of the low input power discharge. However, both discharges demonstrate excellent agreement in the ion heat flux channel, and the high input power discharge demonstrates simultaneous agreement with experiment in both the electron and ion heat flux channels. A summary of linear and nonlinear gyrokinetic results and a discussion of possible explanations for the agreement/disagreement in each heat flux channel is presented.« less

Nonsequential double ionization with mid-infrared laser fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ying -Bin; Wang, Xu; Yu, Ben -Hai

Using a full-dimensional Monte Carlo classical ensemble method, we present a theoretical study of atomic nonsequential double ionization (NSDI) with mid-infrared laser fields, and compare with results from near-infrared laser fields. Unlike single-electron strong-field processes, double ionization shows complex and unexpected interplays between the returning electron and its parent ion core. As a result of these interplays, NSDI for mid-IR fields is dominated by second-returning electron trajectories, instead of first-returning trajectories for near-IR fields. Here, some complex NSDI channels commonly happen with near-IR fields, such as the recollision-excitation-with-subsequent-ionization (RESI) channel, are virtually shut down by mid-IR fields. Besides, the finalmore » energies of the two electrons can be extremely unequal, leading to novel e-e momentum correlation spectra that can be measured experimentally.« less

Correlation electron cyclotron emission diagnostic and improved calculation of turbulent temperature fluctuation levels on ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Creely, A. J.; Freethy, S. J.; Burke, W. M.; Conway, G. D.; Leccacorvi, R.; Parkin, W. C.; Terry, D. R.; White, A. E.

2018-05-01

A newly upgraded correlation electron cyclotron emission (CECE) diagnostic has been installed on the ASDEX Upgrade tokamak and has begun to perform experimental measurements of electron temperature fluctuations. CECE diagnostics measure small amplitude electron temperature fluctuations by correlating closely spaced heterodyne radiometer channels. This upgrade expanded the system from six channels to thirty, allowing simultaneous measurement of fluctuation level radial profiles without repeat discharges, as well as opening up the possibility of measuring radial turbulent correlation lengths. Newly refined statistical techniques have been developed in order to accurately analyze the fluctuation data collected from the CECE system. This paper presents the hardware upgrades for this system and the analysis techniques used to interpret the raw data, as well as measurements of fluctuation spectra and fluctuation level radial profiles.

Nonsequential double ionization with mid-infrared laser fields

DOE PAGES

Li, Ying -Bin; Wang, Xu; Yu, Ben -Hai; ...

2016-11-18

Using a full-dimensional Monte Carlo classical ensemble method, we present a theoretical study of atomic nonsequential double ionization (NSDI) with mid-infrared laser fields, and compare with results from near-infrared laser fields. Unlike single-electron strong-field processes, double ionization shows complex and unexpected interplays between the returning electron and its parent ion core. As a result of these interplays, NSDI for mid-IR fields is dominated by second-returning electron trajectories, instead of first-returning trajectories for near-IR fields. Here, some complex NSDI channels commonly happen with near-IR fields, such as the recollision-excitation-with-subsequent-ionization (RESI) channel, are virtually shut down by mid-IR fields. Besides, the finalmore » energies of the two electrons can be extremely unequal, leading to novel e-e momentum correlation spectra that can be measured experimentally.« less

A TLD-based few-channel spectrometer for mixed photon, electron, and ion fields with high fluence rates.

PubMed

Behrens, R; Ambrosi, P

2002-01-01

A few-channel spectrometer for mixed photon, electron and ion radiation fields has been developed. It consists of a front layer of an etched-track detector foil for detecting protons and ions, a stack of PMMA with thermoluminescent detectors at different depths for gaining spectral information about electrons, and a stack of metallic filters with increasing cut-off photon energies, interspersed with thermoluminescent detectors for gaining spectral information about photons. From the reading of the TL detectors the spectral fluence of the electrons (400 keV to 9 MeV) and photons (20 keV to 2 MeV) can be determined by an unfolding procedure. The spectrometer can be used in pulsed radiation fields with extremely high momentary values of the fluence rate. Design and calibration of the spectrometer are described.

Computational design of intrinsic molecular rectifiers based on asymmetric functionalization of N-phenylbenzamide

DOE PAGES

Ding, Wendu; Koepf, Matthieu; Koenigsmann, Christopher; ...

2015-11-03

Here, we report a systematic computational search of molecular frameworks for intrinsic rectification of electron transport. The screening of molecular rectifiers includes 52 molecules and conformers spanning over 9 series of structural motifs. N-Phenylbenzamide is found to be a promising framework with both suitable conductance and rectification properties. A targeted screening performed on 30 additional derivatives and conformers of N-phenylbenzamide yielded enhanced rectification based on asymmetric functionalization. We demonstrate that electron-donating substituent groups that maintain an asymmetric distribution of charge in the dominant transport channel (e.g., HOMO) enhance rectification by raising the channel closer to the Fermi level. These findingsmore » are particularly valuable for the design of molecular assemblies that could ensure directionality of electron transport in a wide range of applications, from molecular electronics to catalytic reactions.« less

Integration and test of high-speed transmitter electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Soni, Nitin J.; Lizanich, Paul J.

1994-01-01

The NASA Lewis Research Center in Cleveland, Ohio, has developed the electronics for a free-space, direct-detection laser communications system demonstration. Under the High-Speed Laser Integrated Terminal Electronics (Hi-LITE) Project, NASA Lewis has built a prototype full-duplex, dual-channel electronics transmitter and receiver operating at 325 megabit S per second (Mbps) per channel and using quaternary pulse-position modulation (QPPM). This paper describes the integration and testing of the transmitter portion for future application in free-space, direct-detection laser communications. A companion paper reviews the receiver portion of the prototype electronics. Minor modifications to the transmitter were made since the initial report on the entire system, and this paper addresses them. The digital electronics are implemented in gallium arsenide integrated circuits mounted on prototype boards. The fabrication and implementation issues related to these high-speed devices are discussed. The transmitter's test results are documented, and its functionality is verified by exercising all modes of operation. Various testing issues pertaining to high-speed circuits are addressed. A description of the transmitter electronics packaging concludes the paper.

Inter-satellite calibration of FengYun 3 medium energy electron fluxes with POES electron measurements

NASA Astrophysics Data System (ADS)

Zhang, Yang; Ni, Binbin; Xiang, Zheng; Zhang, Xianguo; Zhang, Xiaoxin; Gu, Xudong; Fu, Song; Cao, Xing; Zou, Zhengyang

2018-05-01

We perform an L-shell dependent inter-satellite calibration of FengYun 3 medium energy electron measurements with POES measurements based on rough orbital conjunctions within 5 min × 0.1 L × 0.5 MLT. By comparing electron flux data between the U.S. Polar Orbiting Environmental Satellites (POES) and Chinese sun-synchronous satellites including FY-3B and FY-3C for a whole year of 2014, we attempt to remove less reliable data and evaluate systematic uncertainties associated with the FY-3B and FY-3C datasets, expecting to quantify the inter-satellite calibration factors for the 150-350 keV energy channel at L = 2-7. Compared to the POES data, the FY-3B and FY-3C data generally exhibit a similar trend of electron flux variations but more or less underestimate them within a factor of 5 for the medium electron energy 150-350 keV channel. Good consistency in the flux conjunctions after the inter-calibration procedures gives us certain confidence to generalize our method to calibrate electron flux measurements from various satellite instruments.

Stable generation of GeV-class electron beams from self-guided laser-plasma channels

NASA Astrophysics Data System (ADS)

Hafz, Nasr A. M.; Jeong, Tae Moon; Choi, Il Woo; Lee, Seong Ku; Pae, Ki Hong; Kulagin, Victor V.; Sung, Jae Hee; Yu, Tae Jun; Hong, Kyung-Han; Hosokai, Tomonao; Cary, John R.; Ko, Do-Kyeong; Lee, Jongmin

2008-09-01

Table-top laser-driven plasma accelerators are gaining attention for their potential use in miniaturizing future high-energy accelerators. By irradiating gas jet targets with ultrashort intense laser pulses, the generation of quasimonoenergetic electron beams was recently observed. Currently, the stability of beam generation and the ability to scale to higher electron beam energies are critical issues for practical laser acceleration. Here, we demonstrate the first generation of stable GeV-class electron beams from stable few-millimetre-long plasma channels in a self-guided wakefield acceleration process. As primary evidence of the laser wakefield acceleration in a bubble regime, we observed a boost of both the electron beam energy and quality by reducing the plasma density and increasing the plasma length in a 1-cm-long gas jet. Subsequent three-dimensional simulations show the possibility of achieving even higher electron beam energies by minimizing plasma bubble elongation, and we anticipate dramatic increases in beam energy and quality in the near future. This will pave the way towards ultracompact, all-optical electron beam accelerators and their applications in science, technology and medicine.

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.

We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triplemore » dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.« less

Calibration of the radiation monitor onboard Akebono using Geant4

NASA Astrophysics Data System (ADS)

Asai, Keiko; Takashima, Takeshi; Koi, Tatsumi; Nagai, Tsugunobu

Natural high-energy electrons and protons (keV-MeV) in the space contaminate the data re-ciprocally. In order to calibrate the energy ranges and to remove data contamination on the radiation monitor (RDM) onboard the Japanese satellite, Akebono (EXOS-D), the detector is investigated using the Geant4 simulation toolkit of computational particle tracing. The semi-polar orbiting Akebono, launched in February 1989, is active now. This satellite has been observed the space environment at altitudes of several thousands km. The RDM instrument onboard Akebono monitors energetic particles in the Earth's radiation belt and gives important data accumulated for about two solar cycles. The data from RDM are for electrons in three energy channels of 0.3 MeV, protons in three energy channels of ¿ 30 MeV, and alpha particles in one energy channels of 15-45 MeV. The energy ranges are however based on information of about 20 years ago so that the data seem to include some errors actuary. In addition, these data include contamination of electrons and protons reciprocally. Actuary it is noticed that the electron data are contaminated by the solar protons but unknown quantitative amount of the contamination. Therefore we need data calibration in order to correct the energy ranges and to remove data contamination. The Geant4 simulation gives information of trajectories of incident and secondary particles whose are interacted with materials. We examine the RDM monitor using the Geant4 simulation. We find from the results that relativistic electrons of MeV behave quite complicatedly because of particle-material interaction in the instrument. The results indicate that efficiencies of detection and contamination are dependent on energy. This study compares the electron data from Akebono RDM with the simultaneous observation of CRRES and tries to lead the values of correction for each of the energy channels.

Bipolar Electrode Sample Preparation Devices

NASA Technical Reports Server (NTRS)

Song, Hongjun (Inventor); Wang, Yi (Inventor); Pant, Kapil (Inventor)

2017-01-01

An analyte selection device can include: a body defining a fluid channel having a channel inlet and channel outlet; a bipolar electrode (BPE) between the inlet and outlet; one of an anode or cathode electrically coupled with the BPE on a channel inlet side of the BPE and the other of the anode or cathode electrically coupled with the BPE on a channel outlet side of the BPE; and an electronic system operably coupled with the anode and cathode so as to polarize the BPE. The fluid channel can have any shape or dimension. The channel inlet and channel outlet can be longitudinal or lateral with respect to the longitudinal axis of the channel. The BPE can be any metallic member, such as a flat plate on a wall or mesh as a barrier BPE. The anode and cathode can be located at a position that polarizes the BPE.

Visual evidence of suppressing the ion and electron energy loss on the wall in Hall thrusters

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Peng, Wuji; Sun, Hezhi; Wei, Liqiu; Zeng, Ming; Wang, Fufeng; Yu, Daren

2017-03-01

A method of pushing down magnetic field with two permanent magnetic rings is proposed in this paper. It can realize ionization in a channel and acceleration outside the channel. The wall will only suffer from the bombardment of low-energy ions and electrons, which can effectively reduce channel erosion and extend the operational lifetime of thrusters. Furthermore, there is no additional power consumption of coils, which improves the efficiency of systems. We show here the newly developed 200 W no wall-loss Hall thruster (NWLHT-200) that applies the method of pushing down magnetic field with two permanent magnetic rings; the visual evidence we obtained preliminarily confirms the feasibility that the proposed method can realize discharge without wall energy loss or erosion of Hall thrusters.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

Mass and Charge Transport in Electronically Conductive Polymers

DTIC Science & Technology

1990-08-02

This method is based on coating an electrode surface with an insulating nitrile butadiene rubber ( NBR ). The electrolyte for polymerization (LiCIO4...in acetonitrile) etches channels through the NBR ; pyrrole is then polymerized in these channels. After polymerization the NBR is extracted away with

Switching Matrix For Optical Signals

NASA Technical Reports Server (NTRS)

Grove, Charles H.

1990-01-01

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

Stochastic nonlinear electrical characteristics of graphene

NASA Astrophysics Data System (ADS)

Jun Shin, Young; Gopinadhan, Kalon; Narayanapillai, Kulothungasagaran; Kalitsov, Alan; Bhatia, Charanjit S.; Yang, Hyunsoo

2013-01-01

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 103. It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

Hall Thruster With an External Acceleration Zone

DTIC Science & Technology

2005-09-14

Hall Thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and cross-field (along the electron Hall current direction) velocities were measured. The results presented here, combined with those of previous work, highlight the high sensitivity of electron mobility inside and outside the channel, depending on the background gas density, type of wall

Ion Velocity Measurements in a Linear Hall Thruster (Postprint)

DTIC Science & Technology

2005-06-14

Hall Thruster in a high vacuum environment. The ionized propellant velocities were measured using laser induced fluorescence of the excited state xenon ionic transition at 834.7 nm. Ion velocities were interrogated from the channel exit plane to a distance 30 mm from it. Both axial and cross-field (along the electron Hall current direction) velocities were measured. The results presented here, combined with those of previous work, highlight the high sensitivity of electron mobility inside and outside the channel, depending on the background gas density, type of wall

Wavelength Division Multiplexing Scheme for Radio-Frequency Single Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, Thomas R.; Pellerano, F. A.; Stahle, C. M.; Aidala, K.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2001-01-01

We describe work on a wavelength division multiplexing scheme for radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. Using discrete components, we made a two-channel demonstration of this concept and successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

FdC1 and Leaf-Type Ferredoxins Channel Electrons From Photosystem I to Different Downstream Electron Acceptors.

PubMed

Guan, Xiaoqian; Chen, Shuai; Voon, Chia Pao; Wong, Kam-Bo; Tikkanen, Mikko; Lim, Boon L

2018-01-01

Plant-type ferredoxins in Arabidopsis transfer electrons from the photosystem I to multiple redox-driven enzymes involved in the assimilation of carbon, nitrogen, and sulfur. Leaf-type ferredoxins also modulate the switch between the linear and cyclic electron routes of the photosystems. Recently, two novel ferredoxin homologs with extra C-termini were identified in the Arabidopsis genome (AtFdC1, AT4G14890; AtFdC2, AT1G32550). FdC1 was considered as an alternative electron acceptor of PSI under extreme ferredoxin-deficient conditions. Here, we showed that FdC1 could interact with some, but not all, electron acceptors of leaf-type Fds, including the ferredoxin-thioredoxin reductase (FTR), sulfite reductase (SiR), and nitrite reductase (NiR). Photoreduction assay on cytochrome c and enzyme assays confirmed its capability to receive electrons from PSI and donate electrons to the Fd-dependent SiR and NiR but not to the ferredoxin-NADP + oxidoreductase (FNR). Hence, FdC1 and leaf-type Fds may play differential roles by channeling electrons from photosystem I to different downstream electron acceptors in photosynthetic tissues. In addition, the median redox potential of FdC1 may allow it to receive electrons from FNR in non-photosynthetic plastids.

FdC1 and Leaf-Type Ferredoxins Channel Electrons From Photosystem I to Different Downstream Electron Acceptors

PubMed Central

Guan, Xiaoqian; Chen, Shuai; Voon, Chia Pao; Wong, Kam-Bo; Tikkanen, Mikko; Lim, Boon L.

2018-01-01

Plant-type ferredoxins in Arabidopsis transfer electrons from the photosystem I to multiple redox-driven enzymes involved in the assimilation of carbon, nitrogen, and sulfur. Leaf-type ferredoxins also modulate the switch between the linear and cyclic electron routes of the photosystems. Recently, two novel ferredoxin homologs with extra C-termini were identified in the Arabidopsis genome (AtFdC1, AT4G14890; AtFdC2, AT1G32550). FdC1 was considered as an alternative electron acceptor of PSI under extreme ferredoxin-deficient conditions. Here, we showed that FdC1 could interact with some, but not all, electron acceptors of leaf-type Fds, including the ferredoxin-thioredoxin reductase (FTR), sulfite reductase (SiR), and nitrite reductase (NiR). Photoreduction assay on cytochrome c and enzyme assays confirmed its capability to receive electrons from PSI and donate electrons to the Fd-dependent SiR and NiR but not to the ferredoxin-NADP+ oxidoreductase (FNR). Hence, FdC1 and leaf-type Fds may play differential roles by channeling electrons from photosystem I to different downstream electron acceptors in photosynthetic tissues. In addition, the median redox potential of FdC1 may allow it to receive electrons from FNR in non-photosynthetic plastids. PMID:29670639

DOE Office of Scientific and Technical Information (OSTI.GOV)

DE GERONIMO,G.; FRIED, J.; FROST, E.

We describe a front-end application specific integrated circuit (ASIC) developed for a silicon Compton telescope. Composed of 32 channels, it reads out signals in both polarities from each side of a Silicon strip sensor, 2 mm thick 27 cm long, characterized by a strip capacitance of 30 pF. Each front-end channel provides low-noise charge amplification, shaping with a stabilized baseline, discrimination, and peak detection with an analog memory. The channels can process events simultaneously, and the read out is sparsified. The charge amplifier makes uses a dual-cascode configuration and dual-polarity adaptive reset, The low-hysteresis discriminator and the multi-phase peak detectormore » process signals with a dynamic range in excess of four hundred. An equivalent noise charge (ENC) below 200 electrons was measured at 30 pF, with a slope of about 4.5 electrons/pF at a peaking time of 4 {micro}s. With a total dissipated power of 5 mW the channel covers an energy range up to 3.2 MeV.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

PubMed Central

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L.; Banyai, Douglas; Savaikar, Madhusudan A.; Jaszczak, John A.; Yap, Yoke Khin

2016-01-01

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending. PMID:26846587

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE PAGES

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; ...

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

Aharanov-Bohm quantum interference in a reconfigurable electron system

NASA Astrophysics Data System (ADS)

Irvin, P.; Lu, S.; Annadi, A.; Cheng, G.; Tomczyk, M.; Huang, M.; Levy, J.; Lee, J.-W.; Lee, H.; Eom, C.-B.

Aharanov-Bohm (AB) interference can arise in transport experiments when magnetic flux threads through two or more transport channels. The existence of this behavior requires long-range ballistic transport and is typically observed only in exceptionally clean materials. We observe AB interference in wide (w 100 nm) channels created at the LaAlO3/SrTiO3 interface using conductive AFM lithography. Interference occurs above a critical field B 4 T and increases in magnitude with increasing magnetic field. The period of oscillation implies a ballistic length that greatly exceeds the micron-scale length of the channel, consistent with Fabry-Perot interference in 1D channels. The conditions under which AB oscillations are observed will be discussed in the context of the electron pairing mechanism in LaAlO3/SrTiO3. We gratefully acknowledge financial support from AFOSR FA9550-12-1-0342 (CBE), NSF DMR-1234096 (CBE), and ONR N00014-15-1-2847 (JL).

Shielded serpentine traveling wave tube deflection structure

DOEpatents

Hudson, Charles L.; Spector, Jerome

1994-01-01

A shielded serpentine slow wave deflection structure (10) having a serpene signal conductor (12) within a channel groove (46). The channel groove (46) is formed by a serpentine channel (20) in a trough plate (18) and a ground plane (14). The serpentine signal conductor (12) is supported at its ends by coaxial feed through connectors 28. A beam interaction trough (22) intersects the channel groove (46) to form a plurality of beam interaction regions (56) wherein an electron beam (54) may be deflected relative to the serpentine signal conductor (12).

Structure of conducting channel of lightning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alanakyan, Yu. R.

2013-08-15

The spatial distribution of the plasma density in a lightning channel is studied theoretically. It is shown that the electric-field double layer is formed at the channel boundary. In this case, the electron temperature changes abruptly and ions are accelerated by the electric field of the double layer. The ion momentum flux density is close to the surrounding gas pressure. Cleaning of the channel from heavy particles occurs in particle-exchange processes between the plasma channel and the surrounding air. Hydrogen ions are accumulated inside the expanding channel from the surrounding air, which is enriched by hydrogen-contained molecules. In this case,more » the plasma channel is unstable and splits to a chain of equidistant bunches of plasma. The hydrogen-enrich bunches burn diffusely after recombination exhibiting the bead lightning behavior.« less

An (e, 2e+ ion) study of electron-impact ionization and fragmentation of tetrafluoromethane at low energies

NASA Astrophysics Data System (ADS)

Hossen, Khokon; Ren, Xueguang; Wang, Enliang; Kumar, S. V. K.; Dorn, Alexander

2018-03-01

We study ionization and fragmentation of tetrafluoromethane (CF4) molecule induced by electron impact at low energies ( E 0 = 38 and 67 eV). We use a reaction microscope combined with a pulsed photoemission electron beam for our experimental investigation. The momentum vectors of the two outgoing electrons (energies E 1, E 2) and one fragment ion are detected in triple coincidence (e, 2e+ ion). After dissociation, the fragment products observed are CF3 +, CF2 +, CF+, F+ and C+. For CF3 + and CF2 + channels, we measure the ionized orbitals binding energies, the kinetic energy (KE) of the charged fragments and the two-dimensional (2D) correlation map between binding energy (BE) and KE of the fragments. From the BE and KE spectra, we conclude which molecular orbitals contribute to particular fragmentation channels of CF4. We also measure the total ionization cross section for the formation of CF3 + and CF2 + ions as function of projectile energy. We compare our results with earlier experiments and calculations for electron-impact and photoionization. The major contribution to CF3 + formation originates from ionization of the 4t2 orbital while CF2 + is mainly formed after 3t2 orbital ionization. We also observe a weak contribution of the (4a1)-1 state for the channel CF3 +.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Embedded electronics for a 64-channel wireless brain implant

NASA Astrophysics Data System (ADS)

Burgert, Johann D.; Malasek, Jan; Martel, Sylvain M.; Wiseman, Colette; Fofonoff, Timothy; Dyer, Robert; Hunter, Ian W.; Hatsopoulos, Nicholas; Donoghue, John

2001-10-01

The Telemetric Electrode Array System (TEAS) is a surgically implantable device for the study of neural activity in the brain. An 8x8 array of electrodes collects intra-cortical neural signals and connects them to an analog front end. The front end amplifies and digitizes these microvolt-level signals with 12 bits of resolution and at 31KHz per channel. Peak detection is used to extract the information carrying features of these signals, which are transmitted over a Bluetooth-based radio link at 725 Kbit/sec. The electrode array is made up of 1mm tall, 60-micron square electrodes spaced 500 microns tip-to-tip. A flex circuit connector provides mechanical isolation between the brain and the electronics, which are mounted to the cranium. Power consumption and management is a critical aspect of the design. The entire system must operate off a surgically implantable battery. With this power source, the system must provide the functionality of a wireless, 64-channel oscilloscope for several hours. The system also provides a low-power sleep mode during which the battery can be inductively charged. Power dissipation and biocompatibility issues also affect the design of the electronics for the probe. The electronics system must fit between the skull and the skin of the test subject. Thus, circuit miniaturization and microassembly techniques are essential to construct the probe's electronics.

PMF: The front end electronic of the ALFA detector

NASA Astrophysics Data System (ADS)

Barrillon, P.; Blin, S.; Cheikali, C.; Cuisy, D.; Gaspard, M.; Fournier, D.; Heller, M.; Iwanski, W.; Lavigne, B.; De la Taille, C.; Puzo, P.; Socha, J.-L.

2010-11-01

The front end electronic (PMF) of the future ATLAS luminometer is described here. It is composed of a MAPMT and a compact stack of three PCBs, which deliver high voltage, route and read out of the output signals. The third board contains an FPGA and MAROC, a 64-channel ASIC, which can correct the non-uniformity of the MAPMT channels gain, thanks to a variable gain preamplifier. Its main role is to shape and discriminate the input signals at 1/3 photo-electron and produce 64 trigger outputs. Laboratory tests performed on prototype and pre-series PMFs have showed performances in good agreement with the requirements and have fulfilled the approval criteria for the final production of all elements.

Comparison of influence of incorporated 3d-, 4d- and 4f-metal chlorides on electronic properties of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Kharlamova, M. V.

2013-06-01

In the present work, the channels of single-walled carbon nanotubes were filled with melts of ZnCl2, CdCl2, and TbCl3 by a capillary method with subsequent slow cooling. The detailed study of electronic structure of filled nanotubes was performed using Raman, optical absorption, and X-ray photoelectron spectroscopy. The obtained data are in mutual agreement and it proves that the filling of carbon nanotube channels with all these salts leads to the charge transfer from nanotube walls to the incorporated compounds, thus acceptor doping of nanotubes takes place. It was found out that encapsulated terbium chloride has the largest influence on the electronic properties of carbon nanotubes.

Electron Transport and Ion Acceleration in a Low-power Cylindrical Hall Thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

A. Smirnov; Y. Raitses; N.J. Fisch

2004-06-24

Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are therefore more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. Electron cross-field transport in a 2.6 cm miniaturized cylindrical Hall thruster (100 W power level) has been studied through the analysis of experimental data and Monte Carlo simulations of electron dynamics in the thruster channel. The numerical model takes into account elastic and inelastic electron collisions with atoms, electron-wall collisions, including secondary electron emission, and Bohm diffusion. We show that in order to explainmore » the observed discharge current, the electron anomalous collision frequency {nu}{sub B} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant. The plasma density peak observed at the axis of the 2.6 cm cylindrical Hall thruster is likely to be due to the convergent flux of ions, which are born in the annular part of the channel and accelerated towards the thruster axis.« less

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

PubMed Central

Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

2014-01-01

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

Note: A timing micro-channel plate detector with backside fast preamplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei; University of Chinese Academy of Sciences, Beijing 100049; School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000

2014-03-15

A timing micro-channel plate detector with a backside double-channel fast preamplifier was developed to avoid distortion during signal propagation from the anode to the preamplifier. The mechanical and electronic structure is described. The detector including its backside preamplifier is tested by a {sup 241}Am α-source and a rise time of ∼2 ns with an output background noise of 4 mV{sub rms} was achieved.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

High-quality electron beam generation in a proton-driven hollow plasma wakefield accelerator

NASA Astrophysics Data System (ADS)

Li, Y.; Xia, G.; Lotov, K. V.; Sosedkin, A. P.; Hanahoe, K.; Mete-Apsimon, O.

2017-10-01

Simulations of proton-driven plasma wakefield accelerators have demonstrated substantially higher accelerating gradients compared to conventional accelerators and the viability of accelerating electrons to the energy frontier in a single plasma stage. However, due to the strong intrinsic transverse fields varying both radially and in time, the witness beam quality is still far from suitable for practical application in future colliders. Here we demonstrate the efficient acceleration of electrons in proton-driven wakefields in a hollow plasma channel. In this regime, the witness bunch is positioned in the region with a strong accelerating field, free from plasma electrons and ions. We show that the electron beam carrying the charge of about 10% of 1 TeV proton driver charge can be accelerated to 0.6 TeV with a preserved normalized emittance in a single channel of 700 m. This high-quality and high-charge beam may pave the way for the development of future plasma-based energy frontier colliders.

Raman shifts in electron-irradiated monolayer MoS 2

DOE PAGES

Parkin, William M.; Balan, Adrian; Liang, Liangbo; ...

2016-03-21

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS 2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A' 1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. Inmore » situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS 2-based transport channels.« less

Chapter 6 Quantum Mechanical Methods for Loss-Excitation and Loss-Ionization in Fast Ion-Atom Collisions

NASA Astrophysics Data System (ADS)

Belkic, Dzevad

Inelastic collisions between bare nuclei and hydrogen-like atomic systems are characterized by three main channels: electron capture, excitation, and ionization. Capture dominates at lower energies, whereas excitation and ionization prevail at higher impact energies. At intermediate energies and in the region of resonant scattering near the Massey peak, all three channels become competitive. For dressed or clothed nuclei possessing electrons, such as hydrogen-like ions, several additional channels open up, including electron loss (projectile ionization or stripping). The most important aspect of electron loss is the competition between one- and two-electron processes. Here, in a typical one-electron process, the projectile emits an electron, whereas the target final and initial states are the same. A prototype of double-electron transitions in loss processes is projectile ionization accompanied with an alteration of the target state. In such a two-electron process, the target could be excited or ionized. The relative importance of these loss channels with single- and double-electron transitions involving collisions of dressed projectiles with atomic systems is also strongly dependent on the value of the impact energy. Moreover, impact energies determine which theoretical method is likely to be more appropriate to use for predictions of cross sections. At low energies, an expansion of total scattering wave functions in terms of molecular orbitals is adequate. This is because the projectile spends considerable time in the vicinity of the target, and as a result, a compound system comprised of the projectile and the target can be formed in a metastable molecular state which is prone to decay. At high energies, a perturbation series expansion is more appropriate in terms of powers of interaction potentials. In the intermediate energy region, atomic orbitals are often used with success while expanding the total scattering wave functions. The present work is focused on quantum mechanical perturbation theories applied to electron loss collisions involving two hydrogen-like atoms. Both the one- and two-electron transitions (target unaffected by collision, as well as loss-ionization) are thoroughly examined in various intervals of impact energies varying from the threshold via the Massey peak to the Bethe asymptotic region. Systematics are established for the fast, simple, and accurate computations of cross sections for loss-excitation and loss-ionization accounting for the entire spectra of all four particles, including two free electrons and two free protons. The expounded algorithmic strategy of quantum mechanical methodologies is of great importance for wide applications to particle transport physics, especially in fusion research and hadron radiotherapy. This should advantageously replace the current overwhelming tendency in these fields for using phenomenological modeling with artificial functions extracted from fitting the existing experimental/theoretical data bases for cross sections.

Verification of otolith identity used by fisheries scientists for aging channel catfish

USGS Publications Warehouse

Long, James M.; Stewart, David R.

2010-01-01

Previously published studies of the age estimation of channel catfish Ictalurus punctatus based on otoliths have reported using the sagittae, whereas it is likely they were actually using the lapilli. This confusion may have resulted because in catfishes (ostariophyseans) the lapilli are the largest of the three otoliths, whereas in nonostariophysean fish the sagittae are the largest. Based on (1) scanning electron microscope microphotographs of channel catfish otoliths, (2) X-ray computed tomography scans of a channel catfish head, (3) descriptions of techniques used to removed otoliths from channel catfish reported in the literature, and (4) a sample of channel catfish otoliths received from fisheries biologists from around the country, it is clear that lapilli are most often used for channel catfish aging studies, not sagittae, as has been previously reported. Fisheries scientists who obtain otoliths from channel catfish can use the information in this paper to correctly identify otolith age.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaurov, Alexander A., E-mail: kaurov@uchicago.edu

We explore a time-dependent energy dissipation of the energetic electrons in the inhomogeneous intergalactic medium (IGM) during the epoch of cosmic reionization. In addition to the atomic processes, we take into account the inverse Compton (IC) scattering of the electrons on the cosmic microwave background photons, which is the dominant channel of energy loss for electrons with energies above a few MeV. We show that: (1) the effect on the IGM has both local (atomic processes) and non-local (IC radiation) components; (2) the energy distribution between hydrogen and helium ionizations depends on the initial energy of an electron; (3) themore » local baryon overdensity significantly affects the fractions of energy distributed in each channel; and (4) the relativistic effect of the atomic cross-section becomes important during the epoch of cosmic reionization. We release our code as open source for further modification by the community.« less

A radiation belt monitor for the High Energy Transient Experiment Satellite

NASA Technical Reports Server (NTRS)

Lo, D. H.; Wenzel, K. W.; Petrasso, R. D.; Prigozhin, G. Y.; Doty, J.; Ricker, G.

1993-01-01

A Radiation Belt Monitor (RBM) sensitive to protons and electrons with energy approximately greater than 0.5 MeV has been designed for the High Energy Transient Experiment (HETE) satellite in order to: first, control the on-off configuration of the experiments (i.e. those susceptible to proton damage); and second, to indicate the presence of proton and/or electron events that could masquerade as legitimate high energy photon events. One of the two RBM channels has an enhanced sensitivity to electrons. Each channel of the RBM, based on a PIN silicon diode, requires a typical power of 6 milliwatts. Tests have been performed with protons with energies from approximately 0.1 to 2.5 MeV (generated by a Cockcroft-Walton linear accelerator via the d(d,p)t reaction), and with electrons with energies up to 1 MeV (from a 1.0 microcurie Bi-207 source).

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkin, William M.; Balan, Adrian; Liang, Liangbo

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS 2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A' 1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. Inmore » situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS 2-based transport channels.« less

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaz, Canute I.; Campbell, Jason P.; Ryan, Jason T.

2016-06-15

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger’s equationmore » can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.« less

Measurements of high energy loss rates of fast highly charged U ions channeled in thin silicon crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ray, C.; Chevallier, M.; Dauvergne, D.

2011-07-01

The results of two channeling experiments show that highly charged heavy ions at moderate velocities (v<

Analysis of plasma characteristics and conductive mechanism of laser assisted pulsed arc welding

NASA Astrophysics Data System (ADS)

Liu, Shuangyu; Chen, Shixian; Wang, Qinghua; Li, Yanqing; Zhang, Hong; Ding, Hongtao

2017-05-01

This study aims to investigate the arc plasma shape and the spectral characteristics during the laser assisted pulsed arc welding process. The arc plasma shape was synchronously observed using a high speed camera, and the emission spectrum of plasma was obtained by spectrometer. The well-known Boltzmann plot method and Stark broadening were used to calculate the electron temperature and density respectively. The conductive mechanism of arc ignition in laser assisted arc hybrid welding was investigated, and it was found that the plasma current moved to the arc anode under the action of electric field. Thus, a significant parabolic channel was formed between the keyhole and the wire tip. This channel became the main method of energy transformation between the arc and the molten pool. The calculation results of plasma resistivity show that the laser plasma has low resistivity as the starting point of conductive channel formation. When the laser pulse duration increases, the intensity of the plasma radiation spectrum and the plasma electron density will increase, and the electron temperature will decrease.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

The upgrade of the Thomson scattering system for measurement on the C-2/C-2U devices.

PubMed

Zhai, K; Schindler, T; Kinley, J; Deng, B; Thompson, M C

2016-11-01

The C-2/C-2U Thomson scattering system has been substantially upgraded during the latter phase of C-2/C-2U program. A Rayleigh channel has been added to each of the three polychromators of the C-2/C-2U Thomson scattering system. Onsite spectral calibration has been applied to avoid the issue of different channel responses at different spots on the photomultiplier tube surface. With the added Rayleigh channel, the absolute intensity response of the system is calibrated with Rayleigh scattering in argon gas from 0.1 to 4 Torr, where the Rayleigh scattering signal is comparable to the Thomson scattering signal at electron densities from 1 × 10 13 to 4 × 10 14 cm -3 . A new signal processing algorithm, using a maximum likelihood method and including detailed analysis of different noise contributions within the system, has been developed to obtain electron temperature and density profiles. The system setup, spectral and intensity calibration procedure and its outcome, data analysis, and the results of electron temperature/density profile measurements will be presented.

75 FR 8725 - Agency Forms Undergoing Paperwork Reduction Act Review

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-25

.... Proposed Project CDC Web site and Communication Channels Usability Evaluation, (OMB no. 0925-0735, exp. 3/31/2010)--Revision--National Center for Health Marketing (NCHM), Centers for Disease Control and..., mobile-based or other electronic communication channels hosting CDC content on an ongoing basis. It is...

Photodissociation of the carbon monoxide dication in the {sup 3}Σ{sup −} manifold: Quantum control simulation towards the C{sup 2+} + O channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vranckx, S.; Laboratoire de Chimie Physique; Loreau, J.

The photodissociation and laser assisted dissociation of the carbon monoxide dication X{sup 3}Π CO{sup 2+} into the {sup 3}Σ{sup −} states are investigated. Ab initio electronic structure calculations of the adiabatic potential energy curves, radial nonadiabatic couplings, and dipole moments for the X {sup 3}Π state are performed for 13 excited {sup 3}Σ{sup −} states of CO{sup 2+}. The photodissociation cross section, calculated by time-dependent methods, shows that the C{sup +} + O{sup +} channels dominate the process in the studied energy range. The carbon monoxide dication CO{sup 2+} is an interesting candidate for control because it can be producedmore » in a single, long lived, v = 0 vibrational state due to the instability of all the other excited vibrational states of the ground {sup 3}Π electronic state. In a spectral range of about 25 eV, perpendicular transition dipoles couple this {sup 3}Π state to a manifold of {sup 3}Σ{sup −} excited states leading to numerous C{sup +} + O{sup +} channels and a single C{sup 2+} + O channel. This unique channel is used as target for control calculations using local control theory. We illustrate the efficiency of this method in order to find a tailored electric field driving the photodissociation in a manifold of strongly interacting electronic states. The selected local pulses are then concatenated in a sequence inspired by the “laser distillation” strategy. Finally, the local pulse is compared with optimal control theory.« less

Readout electronics for CBM-TOF super module quality evaluation based on 10 Gbps ethernet

NASA Astrophysics Data System (ADS)

Jiang, D.; Cao, P.; Huang, X.; Zheng, J.; Wang, Q.; Li, B.; Li, J.; Liu, S.; An, Q.

2017-07-01

The Compressed Baryonic Matter-Time of Flight (CBM-TOF) wall uses high performance of Multi-gap Resistive Plate Chambers (MRPC) assembled in super modules to identify charged particles with high channel density and high measurement precision at high event rate. Electronics meet the challenge for reading data out from a super module at high speed of about 6 Gbps in real time. In this paper, the readout electronics for CBM-TOF super module quality evaluation is proposed based on 10 Gigabit Ethernet. The digitized TOF data from one super module will be concentrated at the front-end electronics residing on the side of the super module and transmitted to an extreme speed readout module (XSRM) housed in the backend crate through the PCI Express (PCIe) protocol via optic channels. Eventually, the XSRM transmits data to the data acquisition (DAQ) system through four 10 Gbps Ethernet ports in real time. This readout structure has advantages of high performance and expansibility. Furthermore, it is easy to operate. Test results on the prototype show that the overall data readout performance for each XSRM can reach up to 28.8 Gbps, which means XSRM can meet the requirement of reading data out from 4 super modules with 1280 channels in real time.

Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes

PubMed Central

Huang, Yifeng; Deng, Zexiang; Wang, Weiliang; Liang, Chaolun; She, Juncong; Deng, Shaozhi; Xu, Ningsheng

2015-01-01

Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the experimental findings and the physical insight into the field induced crystalline-to-amorphous phase transformation on the surface of the Si nano-cathode. The crystalline Si tip apex deformed to amorphous structure at a low macroscopic field (0.6~1.65 V/nm) with an ultra-low emission current (1~10 pA). First-principle calculation suggests that the strong electrostatic force exerting on the electrons in the surface lattices would take the account for the field-induced atomic migration that result in an amorphization. The arsenic-dopant in the Si surface lattice would increase the inner stress as well as the electron density, leading to a lower amorphization field. Highly reliable Si nano-cathodes were obtained by employing diamond like carbon coating to enhance the electron emission and thus decrease the surface charge accumulation. The findings are crucial for developing highly reliable Si-based nano-scale vacuum channel transistors and have the significance for future Si nano-electronic devices with narrow separation. PMID:25994377

Advanced electronics for the CTF MEG system.

PubMed

McCubbin, J; Vrba, J; Spear, P; McKenzie, D; Willis, R; Loewen, R; Robinson, S E; Fife, A A

2004-11-30

Development of the CTF MEG system has been advanced with the introduction of a computer processing cluster between the data acquisition electronics and the host computer. The advent of fast processors, memory, and network interfaces has made this innovation feasible for large data streams at high sampling rates. We have implemented tasks including anti-alias filter, sample rate decimation, higher gradient balancing, crosstalk correction, and optional filters with a cluster consisting of 4 dual Intel Xeon processors operating on up to 275 channel MEG systems at 12 kHz sample rate. The architecture is expandable with additional processors to implement advanced processing tasks which may include e.g., continuous head localization/motion correction, optional display filters, coherence calculations, or real time synthetic channels (via beamformer). We also describe an electronics configuration upgrade to provide operator console access to the peripheral interface features such as analog signal and trigger I/O. This allows remote location of the acoustically noisy electronics cabinet and fitting of the cabinet with doors for improved EMI shielding. Finally, we present the latest performance results available for the CTF 275 channel MEG system including an unshielded SEF (median nerve electrical stimulation) measurement enhanced by application of an adaptive beamformer technique (SAM) which allows recognition of the nominal 20-ms response in the unaveraged signal.

Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

NASA Astrophysics Data System (ADS)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

2015-10-01

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

Analysis of energy states where electrons and holes coexist in pseudomorphically strained InAs high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

2016-04-01

In strained high-electron-mobility transistors (HEMTs) with InAs as the channel, excess electrons and holes are generated in the drain region by impact ionization. In the source region, electrons are injected to recombine with accumulated holes by the Auger process. This causes the shift of the gate potential, V GS,shift, for HEMTs. For a system where electrons and holes coexist, we established a theory taking into account the nonparabolicity of the conduction band in the InAs channel. This theory enables us to rigorously determine not only the energy states and the concentration profiles for both carriers but also the V GS,shift due to an accumulation of holes. We have derived the Auger recombination theory which takes into account the Fermi-Dirac statistics and is applicable to an arbitrary shape of potential energy. The Auger recombination lifetime τA for InAs-PHEMTs was estimated as a function of the sheet hole concentration, p s, and τA was on the order of psec for p s exceeding 1012 cm-2.

Experimental study of multichromatic terahertz wave propagation through planar micro-channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Young-Min -Min; Northern Illinois Univ., Dekalb, IL; Fermi National Accelerator Lab.

2012-04-10

Previous theoretical and numerical studies [Y. M. Shin and L. R. Barnett, Appl. Phys. Lett. 92, 091501 (2008) and Y. M. Shin et al., Appl. Phys. Lett. 93, 221504 (2008)] have reported that a planar micro-channel with an asymmetric corrugation array supports strongly confined propagation of broadband THz plasmonic waves. The highly broad spectral response is experimentally demonstrated in the near-THz regime of 0.19-0.265 THz. Signal reflection and transmission tests on the three designed micro-channels including directional couplers resulted in a full-width-half-maximum bandwidth of ~ 50-60GHz with an insertion loss of approximately -5 dB, which is in good agreement withmore » simulation data. As a result, these micro-structures can be utilized for free electron beam and electronic/optic integrated devices« less

The Advanced Gamma-ray Imaging System (AGIS): Camera Electronics Designs

NASA Astrophysics Data System (ADS)

Tajima, H.; Buckley, J.; Byrum, K.; Drake, G.; Falcone, A.; Funk, S.; Holder, J.; Horan, D.; Krawczynski, H.; Ong, R.; Swordy, S.; Wagner, R.; Williams, D.

2008-04-01

AGIS, a next generation of atmospheric Cherenkov telescope arrays, aims to achieve a sensitivity level of a milliCrab for gamma-ray observations in the energy band of 40 GeV to 100 TeV. Such improvement requires cost reduction of individual components with high reliability in order to equip the order of 100 telescopes necessary to achieve the sensitivity goal. We are exploring several design concepts to reduce the cost of camera electronics while improving their performance. These design concepts include systems based on multi-channel waveform sampling ASIC optimized for AGIS, a system based on IIT (image intensifier tube) for large channel (order of 1 million channels) readout as well as a multiplexed FADC system based on the current VERITAS readout design. Here we present trade-off in the studies of these design concepts.

The Advanced Gamma-ray Imaging System (AGIS): Camera Electronics Designs

NASA Astrophysics Data System (ADS)

Tajima, Hiroyasu; Buckley, J.; Byrum, K.; Drake, G.; Falcone, A.; Funk, S.; Holder, J.; Horan, D.; Krawczynski, H.; Ong, R.; Swordy, S.; Wagner, R.; Wakely, S.; Williams, D.; Camera Electronics Working Group; AGIS Collaboration

2008-03-01

AGIS, a next generation of atmospheric Cherenkov telescope arrays, aims to achieve a sensitivity level of a milliCrab for gamma-ray observations in in the energy band of 40 GeV to 100 TeV. Such improvement requires cost reduction of individual components with high reliability in order to equip the order of 100 telescopes necessary to achieve the sensitivity goal. We are exploring several design concepts to reduce the cost of camera electronics while improving their performance. These design concepts include systems based on multi-channel waveform sampling ASIC optimized for AGIS, a system based on IIT (image intensifier tube) for large channel (order of 1 million channels) readout as well as a multiplexed FADC system based on the current VERITAS readout design. Here we present trade-off studies of these design concepts.

Mass-dependent channel electron multiplier operation. [for ion detection

NASA Technical Reports Server (NTRS)

Fields, S. A.; Burch, J. L.; Oran, W. A.

1977-01-01

The absolute counting efficiency and pulse height distributions of a continuous-channel electron multiplier used in the detection of hydrogen, argon and xenon ions are assessed. The assessment technique, which involves the post-acceleration of 8-eV ion beams to energies from 100 to 4000 eV, provides information on counting efficiency versus post-acceleration voltage characteristics over a wide range of ion mass. The charge pulse height distributions for H2 (+), A (+) and Xe (+) were measured by operating the experimental apparatus in a marginally gain-saturated mode. It was found that gain saturation occurs at lower channel multiplier operating voltages for light ions such as H2 (+) than for the heavier ions A (+) and Xe (+), suggesting that the technique may be used to discriminate between these two classes of ions in electrostatic analyzers.

Electron Transfer Dissociation: Effects of Cation Charge State on Product Partitioning in Ion/Ion Electron Transfer to Multiply Protonated Polypeptides

PubMed Central

Liu, Jian; McLuckey, Scott A.

2012-01-01

The effect of cation charge state on product partitioning in the gas-phase ion/ion electron transfer reactions of multiply protonated tryptic peptides, model peptides, and relatively large peptides with singly charged radical anions has been examined. In particular, partitioning into various competing channels, such as proton transfer (PT) versus electron transfer (ET), electron transfer with subsequent dissociation (ETD) versus electron transfer with no dissociation (ET,noD), and fragmentation of backbone bonds versus fragmentation of side chains, was measured quantitatively as a function of peptide charge state to allow insights to be drawn about the fundamental aspects of ion/ion reactions that lead to ETD. The ET channel increases relative to the PT channel, ETD increases relative to ET,noD, and fragmentation at backbone bonds increases relative to side-chain cleavages as cation charge state increases. The increase in ET versus PT with charge state is consistent with a Landau-Zener based curve-crossing model. An optimum charge state for ET is predicted by the model for the ground state-to-ground state reaction. However, when the population of excited product ion states is considered, it is possible that a decrease in ET efficiency as charge state increases will not be observed due to the possibility of the population of excited electronic states of the products. Several factors can contribute to the increase in ETD versus ET,noD and backbone cleavage versus side-chain losses. These factors include an increase in reaction exothermicity and charge state dependent differences in precursor and product ion structures, stabilities, and sites of protonation. PMID:23264749

Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benson, Brandon

2015-08-14

High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact whenmore » compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.« less

Interpretation of increased energetic particle flux measurements by SEPT aboard the STEREO spacecraft and contamination

NASA Astrophysics Data System (ADS)

Wraase, S.; Heber, B.; Böttcher, S.; Bucik, R.; Dresing, N.; Gómez-Herrero, R.; Klassen, A.; Müller-Mellin, R.

2018-04-01

Context. Interplanetary (IP) shocks are known to be accelerators of energetic charged particles observed in-situ in the heliosphere. However, the acceleration of near-relativistic electrons by shocks in the interplanetary medium is often questioned. On 9 August 2011 a corotating interaction region (CIR) passed STEREO B (STB), which resulted in a flux increase in the electron and ion channels of the Solar Electron and Proton Telescope (SEPT). Because electron measurements in the few keV to several 100 keV range rely on the so-called magnet foil technique, which is utilized by SEPT, ions can contribute to the electron channels. Aim. We aim to investigate whether the flux increase in the electron channels of SEPT during the CIR event on 9 August 2011 is caused by ion contamination only. Methods: We compute the SEPT response functions for protons and helium utilizing an updated GEANT4 model of SEPT. The CIR energetic particle ion spectra for protons and helium are assumed to follow a Band function in energy per nucleon with a constant helium to proton ratio. Results: Our analysis leads to a helium to proton ratio of 16.9% and a proton flux following a Band function with the parameters I0 = 1.24 × 104 (cm2 s sr MeV nuc-1)-1, Ec = 79 keV nuc-1, and spectral indices of γ1 = -0.94 and γ2 = -3.80, which are in good agreement with measurements by the Suprathermal Ion Telescope (SIT) aboard STB. Conclusions: Since our results explain the SEPT measurements, we conclude that no significant amount of electrons were accelerated between 55 and 425 keV by the CIR.

Projection structure of a ClC-type chloride channel at 6.5Å resolution

NASA Astrophysics Data System (ADS)

Mindell, Joseph A.; Maduke, Merritt; Miller, Christopher; Grigorieff, Nikolaus

2001-01-01

Virtually all cells in all eukaryotic organisms express ion channels of the ClC type, the only known molecular family of chloride-ion-selective channels. The diversity of ClC channels highlights the multitude and range of functions served by gated chloride-ion conduction in biological membranes, such as controlling electrical excitability in skeletal muscle, maintaining systemic blood pressure, acidifying endosomal compartments, and regulating electrical responses of GABA (γ-aminobutyric acid)-containing interneurons in the central nervous system. Previously, we expressed and purified a prokaryotic ClC channel homologue. Here we report the formation of two-dimensional crystals of this ClC channel protein reconstituted into phospholipid bilayer membranes. Cryo-electron microscopic analysis of these crystals yields a projection structure at 6.5Å resolution, which shows off-axis water-filled pores within the dimeric channel complex.

What Hinders Electron Transfer Dissociation (ETD) of DNA Cations?

NASA Astrophysics Data System (ADS)

Hari, Yvonne; Leumann, Christian J.; Schürch, Stefan

2017-12-01

Radical activation methods, such as electron transfer dissociation (ETD), produce structural information complementary to collision-induced dissociation. Herein, electron transfer dissociation of 3-fold protonated DNA hexamers was studied to gain insight into the fragmentation mechanism. The fragmentation patterns of a large set of DNA hexamers confirm cytosine as the primary target of electron transfer. The reported data reveal backbone cleavage by internal electron transfer from the nucleobase to the phosphate linker leading either to a•/ w or d/ z• ion pairs. This reaction pathway contrasts with previous findings on the dissociation processes after electron capture by DNA cations, suggesting multiple, parallel dissociation channels. However, all these channels merely result in partial fragmentation of the precursor ion because the charge-reduced DNA radical cations are quite stable. Two hypotheses are put forward to explain the low dissociation yield of DNA radical cations: it is either attributed to non-covalent interactions between complementary fragments or to the stabilization of the unpaired electron in stacked nucleobases. MS3 experiments suggest that the charge-reduced species is the intact oligonucleotide. Moreover, introducing abasic sites significantly increases the dissociation yield of DNA cations. Consequently, the stabilization of the unpaired electron by π-π-stacking provides an appropriate rationale for the high intensity of DNA radical cations after electron transfer. [Figure not available: see fulltext.

Note: Experimental observation of nano-channel pattern in light sheet laser interference nanolithography system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Kavya; Mondal, Partha Pratim, E-mail: partha@iap.iisc.ernet.in

We experimentally observed nano-channel-like pattern in a light-sheet based interference nanolithography system. The optical system created nano-channel-like patterned illumination. Coherent counter-propagating light sheets are made to interfere at and near geometrical focus along the propagation z-axis. This results in the formation of nano-channel-like pattern (of size ≈ 300 nm and inter-channel periodicity of ≈337.5 nm) inside the sample due to constructive and destructive interference. In addition, the technique has the ability to generate large area patterning using larger light-sheets. Exciting applications are in the broad field of nanotechnology (nano-electronics and nano-fluidics).

Advanced Channeling Technologies in Plasma and Laser Fields

NASA Astrophysics Data System (ADS)

Dabagov, Sultan B.

2018-01-01

Channeling is the phenomenon well known in the world mostly related to the motion of the beams of charged particles in aligned crystals. However, recent studies have shown the feasibility of channeling phenomenology application for description of other various mechanisms of interaction of charged as well as neutral particle beams in solids, plasmas and electromagnetic fields covering the research fields from crystal based undulators, collimators and accelerators to capillary based X-ray and neutron optical elements. This brief review is devoted to the status of channeling-based researches at different centers within international and national collaborations. Present and future possible developments in channeling tools applied to electron interactions in strong plasma and laser fields will be analyzed.

A low cost, modular, and physiologically inspired electronic neuron

NASA Astrophysics Data System (ADS)

Sitt, J. D.; Campetella, F.; Aliaga, J.

2010-12-01

We describe a low cost design of an electronic neuron, which is designed to represent the dynamical properties of the membrane potential of biological neurons by modeling the states of the membrane channels. This electronic neuron can be used to study the nonlinear properties of the membrane voltage dynamics and to develop and analyze small neuronal circuits using electronic neurons as building blocks.

Multichannel, Active Low-Pass Filters

NASA Technical Reports Server (NTRS)

Lev, James J.

1989-01-01

Multichannel integrated circuits cascaded to obtain matched characteristics. Gain and phase characteristics of channels of multichannel, multistage, active, low-pass filter matched by making filter of cascaded multichannel integrated-circuit operational amplifiers. Concept takes advantage of inherent equality of electrical characteristics of nominally-identical circuit elements made on same integrated-circuit chip. Characteristics of channels vary identically with changes in temperature. If additional matched channels needed, chips containing more than two operational amplifiers apiece (e.g., commercial quad operational amplifliers) used. Concept applicable to variety of equipment requiring matched gain and phase in multiple channels - radar, test instruments, communication circuits, and equipment for electronic countermeasures.

Computer-controlled attenuator.

PubMed

Mitov, D; Grozev, Z

1991-01-01

Various possibilities for applying electronic computer-controlled attenuators for the automation of physiological experiments are considered. A detailed description is given of the design of a 4-channel computer-controlled attenuator, in two of the channels of which the output signal can change by a linear step, in the other two channels--by a logarithmic step. This, together with the existence of additional programmable timers, allows to automate a wide range of studies in different spheres of physiology and psychophysics, including vision and hearing.

Two-channel Kondo effect and renormalization flow with macroscopic quantum charge states.

PubMed

Iftikhar, Z; Jezouin, S; Anthore, A; Gennser, U; Parmentier, F D; Cavanna, A; Pierre, F

2015-10-08

Many-body correlations and macroscopic quantum behaviours are fascinating condensed matter problems. A powerful test-bed for the many-body concepts and methods is the Kondo effect, which entails the coupling of a quantum impurity to a continuum of states. It is central in highly correlated systems and can be explored with tunable nanostructures. Although Kondo physics is usually associated with the hybridization of itinerant electrons with microscopic magnetic moments, theory predicts that it can arise whenever degenerate quantum states are coupled to a continuum. Here we demonstrate the previously elusive 'charge' Kondo effect in a hybrid metal-semiconductor implementation of a single-electron transistor, with a quantum pseudospin of 1/2 constituted by two degenerate macroscopic charge states of a metallic island. In contrast to other Kondo nanostructures, each conduction channel connecting the island to an electrode constitutes a distinct and fully tunable Kondo channel, thereby providing unprecedented access to the two-channel Kondo effect and a clear path to multi-channel Kondo physics. Using a weakly coupled probe, we find the renormalization flow, as temperature is reduced, of two Kondo channels competing to screen the charge pseudospin. This provides a direct view of how the predicted quantum phase transition develops across the symmetric quantum critical point. Detuning the pseudospin away from degeneracy, we demonstrate, on a fully characterized device, quantitative agreement with the predictions for the finite-temperature crossover from quantum criticality.

Evaluation of RCA thinned buried channel charge-coupled devices /CCDs/ for scientific applications

NASA Technical Reports Server (NTRS)

Zucchino, P.; Long, D.; Lowrance, J. L.; Renda, G.; Crawshaw, D. D.; Battson, D. F.

1981-01-01

An experimental version of a thinned illuminated buried-channel 512 x 320 pixel CCD with reduced amplifier input capacitance has been produced which is characterized by lower readout noise. Changes made to the amplifier are discussed, and readout noise measurements obtained by several different techniques are presented. The single energetic electron response of the CCD in the electron-bombarded mode and the single 5.9 keV X-ray pulse height distribution are reported. Results are also given on the dark current versus temperature and the spatial frequency response as a function of signal level.

On the current drive capability of low dimensional semiconductors: 1D versus 2D

DOE PAGES

Zhu, Y.; Appenzeller, J.

2015-10-29

Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Lastly, our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

NASA Astrophysics Data System (ADS)

Backe, H.; Lauth, W.; Tran Thi, T. N.

2018-04-01

Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV . This observation motivated us to initiate dechanneling length measurements as function of the beam energy since the occupation of quantum states in the channeling potential is expected to enhance the dechanneling length. High energy loss signals, generated as a result of emission of a bremsstrahlung photon with about half the beam energy at channeling of 450 and 855 MeV electrons, were measured as function of the crystal thickness. The analysis required additional assumptions which were extracted from the numerical solution of the Fokker-Planck equation. Preliminary results for diamond are presented. In addition, we reanalyzed dechanneling length measurements at silicon single crystals performed previously at the Mainz Microtron MAMI at beam energies between 195 and 855 MeV from which we conclude that the quality of our experimental data set is not sufficient to derive definite conclusions on the dechanneling length. Our experimental results are below the predictions of the Fokker-Planck equation and somewhat above the results of simulation calculations of A. V. Korol and A. V. Solov'yov et al. on the basis of the MBN Explorer simulation package. We somehow conservatively conclude that the prediction of the asymptotic dechanneling length on the basis of the Fokker-Planck equation represents an upper limit.

Monte-Carlo simulation of spatial resolution of an image intensifier in a saturation mode

NASA Astrophysics Data System (ADS)

Xie, Yuntao; Wang, Xi; Zhang, Yujun; Sun, Xiaoquan

2018-04-01

In order to investigate the spatial resolution of an image intensifier which is irradiated by high-energy pulsed laser, a three-dimensional electron avalanche model was built and the cascade process of the electrons was numerically simulated. The influence of positive wall charges, due to the failure of replenishing charges extracted from the channel during the avalanche, was considered by calculating its static electric field through particle-in-cell (PIC) method. By tracing the trajectory of electrons throughout the image intensifier, the energy of the electrons at the output of the micro channel plate and the electron distribution at the phosphor screen are numerically calculated. The simulated energy distribution of output electrons are in good agreement with experimental data of previous studies. In addition, the FWHM extensions of the electron spot at phosphor screen as a function of the number of incident electrons are calculated. The results demonstrate that the spot size increases significantly with the increase in the number of incident electrons. Furthermore, we got the MTFs of the image intensifier by Fourier transform of a point spread function at phosphor screen. Comparison between the MTFs in our model and the MTFs by analytic method shows that spatial resolution of the image intensifier decreases significantly as the number of incident electrons increases, and it is particularly obvious when incident electron number greater than 100.

Optical nondestructive dynamic measurements of wafer-scale encapsulated nanofluidic channels.

PubMed

Liberman, Vladimir; Smith, Melissa; Weaver, Isaac; Rothschild, Mordechai

2018-05-20

Nanofluidic channels are of great interest for DNA sequencing, chromatography, and drug delivery. However, metrology of embedded or sealed nanochannels and measurement of their fill-state have remained extremely challenging. Existing techniques have been restricted to optical microscopy, which suffers from insufficient resolution, or scanning electron microscopy, which cannot measure sealed or embedded channels without cleaving the sample. Here, we demonstrate a novel method for accurately extracting nanochannel cross-sectional dimensions and monitoring fluid filling, utilizing spectroscopic ellipsometric scatterometry, combined with rigorous electromagnetic simulations. Our technique is capable of measuring channel dimensions with better than 5-nm accuracy and assessing channel filling within seconds. The developed technique is, thus, well suited for both process monitoring of channel fabrication as well as for studying complex phenomena of fluid flow through nanochannel structures.

Effects of electromagnetic wiggler and ion channel guiding on equilibrium orbits and waves propagation in a free electron laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amri, Hassan Ehsani; Mohsenpour, Taghi, E-mail: mohsenpour@umz.ac.ir

2016-02-15

In this paper, an analysis of equilibrium orbits for electrons by a simultaneous solution of the equation of motion and the dispersion relation for electromagnetic wave wiggler in a free-electron laser (FEL) with ion-channel guiding has been presented. A fluid model has been used to investigate interactions among all possible waves. The dispersion relation has been derived for electrostatic and electromagnetic waves with all relativistic effects included. This dispersion relation has been solved numerically. For group I and II orbits, when the transverse velocity is small, only the FEL instability is found. In group I and II orbits with relativelymore » large transverse velocity, new couplings between other modes are found.« less

A metal-organic framework based on nanosized hexagonal channels as fluorescent indicator for detection of nitroaromatic explosives

NASA Astrophysics Data System (ADS)

Hu, Xiao-Li; Wang, Xin-Long; Su, Zhong-Min

2018-02-01

A novel Zn-MOF (metal organic framework) [Zn3(NTB)2(DMA)2]·12DMA (NTB = 4,4‧,4″-nitrilotrisbenzoic acid; DMA = N,N-dimethylacetamide) (1) was obtained under solvothermal condition. The resulted MOF which is based on {Zn3} SBU displays an interesting (3,6)-connected three-dimensional net with nanosized, hexagonal channels. Additionally, 1 can be a useful fluorescent indicator for the detection of nitroaromatic explosives qualitatively and quantitatively via a strong quenching effect, especially for picric acid (PA). With increasing - NO2 groups, energy transfer from the electron-donating framework to high electron deficiency becomes more, making the effect of fluorescence quenching more obvious. The result demonstrates that the photo-induced electron transfer (PET) is responsible for the emission quenching.

A frequency tunable, eight-channel correlation ECE system for electron temperature turbulence measurements on the DIII-D tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, C., E-mail: csung@physics.ucla.edu; Peebles, W. A.; Wannberg, C.

2016-11-15

A new eight-channel correlation electron cyclotron emission diagnostic has recently been installed on the DIII-D tokamak to study both turbulent and coherent electron temperature fluctuations under various plasma conditions and locations. This unique system is designed to cover a broad range of operation space on DIII-D (1.6-2.1 T, detection frequency: 72-108 GHz) via four remotely selected local oscillators (80, 88, 96, and 104 GHz). Eight radial locations are measured simultaneously in a single discharge covering as much as half the minor radius. In this paper, we present design details of the quasi-optical system, the receiver, as well as representative datamore » illustrating operation of the system.« less

Applications of synchrotron x-ray diffraction topography to fractography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bilello, J.C.

1983-01-01

Fractographs have been taken using a variety of probes each of which produces different types of information. Methods which have been used to examine fracture surfaces include: (a) optical microscopy, particularly interference contrast methods, (b) scanning electron microscopy (SEM), (c) SEM with electron channelling, (d) SEM with selected-area electron channelling, (e) Berg-Barrett (B-B) topography, and now (f) synchrotron x-radiation fractography (SXRF). This review concentrated on the role that x-ray methods can play in such studies. In particular, the ability to nondestructively assess the subsurface microstructure associated with the fracture to depths of the order of 5 to 10 ..mu..m becomesmore » an important attribute for observations of a large class of semi-brittle metals, semiconductors and ceramics.« less

Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy

DOE PAGES

Ihlefeld, Jon F.; Michael, Joseph R.; McKenzie, Bonnie B.; ...

2016-09-16

We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yieldmore » can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.« less

Derated Application of Parts for ESD (Electronic Systems Division) System Development. Revision

DTIC Science & Technology

1985-03-01

SSVAC Coearaen ~ree , neem ! adIrcuit ’design)~ Stress derating., __ o~~~~~:.mponent anplicatieonl ~blc ,ub~ This documnent establishes part...Channel & Breakdown Voltage 60% 70% 70% o N Channel) Max Tj (C) 95 105 125 48 MAXDM ALLOWABLE ABSOLUTE VALUE * OIL PERCENT OF RATED VALUE PART TYPE

TV 101: Good Broadcast Journalism for the Classroom?

ERIC Educational Resources Information Center

Haney, James M.

A study was conducted to assess the arguments that have been made in favor of and opposed to the electronic curricular supplements, Channel One and CNN Newsroom. Four types of information were analyzed: (1) corporate news releases and research results were reviewed; (2) Channel One and CNN Newsroom programs were studied for format, style, and…

Hooked for a Week on Two Yugoslav TV Channels: PALMA and RTS2.

ERIC Educational Resources Information Center

Bogdanic, Aleksandar

1996-01-01

Investigates content composition, quality, and origin of two Yugoslav TV channels reflecting current media make-up in the region (remaining domination of state television and proliferation of commercial TV). Corroborates some assumed directions of new electronic media: focus on entertainment; lack of news and information programming; and high…

Communication strategies in acute health care: evaluation within the context of infection prevention and control.

PubMed

Edwards, R; Sevdalis, N; Vincent, C; Holmes, A

2012-09-01

Communication in healthcare settings has recently received significant attention in the literature. However, there continues to be a large gap in current understanding of the effectiveness of different communication channels used in acute healthcare settings, particularly in the context of infection prevention and control (IPC). To explore and evaluate the main communication channels used within hospitals to communicate with healthcare workers (HCWs) and to propose practical recommendations. Critical review of the main communication channels used within acute health care to communicate information to HCWs, and analysis of their impact on practice. The analysis covers verbal communications, standardization via guidelines, education and training, electronic communications and marketing strategies. Traditional communication channels have not been successful in changing and sustaining best practice in IPC, but newer approaches (electronic messages and marketing) also have pitfalls. A few simple recommendations are made in relation to the development, implementation and evaluation of communications to HCWs; top-down vs bottom-up communications; and the involvement of HCWs, particularly ward personnel. Copyright © 2012 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Implications of Electronic Newspapers for Public Relations Teaching, Practice, and Research.

ERIC Educational Resources Information Center

Curtin, Patricia A.; Cameron, Glen T.

Electronic newspapers offer a new media channel for public relations materials, but a study of their proposed use and implications for the profession does not fit well into already established research areas. This paper reviews the development and features of electronic newspapers and suggests new avenues of research and uses pertinent to the…

Numerical simulations used for a validity check on the laser induced photo-detachment diagnostic method in electronegative plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oudini, N.; Taccogna, F.; Bendib, A.

2014-06-15

Laser photo-detachment is used as a method to measure or determine the negative ion density and temperature in electronegative plasmas. In essence, the method consists of producing an electropositive channel (negative ion free region) via pulsed laser photo-detachment within an electronegative plasma bulk. Electrostatic probes placed in this channel measure the change in the electron density. A second pulse might be used to track the negative ion recovery. From this, the negative ion density and temperature can be determined. We study the formation and relaxation of the electropositive channel via a two-dimensional Particle-In-Cell/Mote Carlo collision model. The simulation is mainlymore » carried out in a Hydrogen plasma with an electronegativity of α = 1, with a parametric study for α up to 20. The temporal and spatial evolution of the plasma potential and the electron densities shows the formation of a double layer (DL) confining the photo-detached electrons within the electropositive channel. This DL evolves into two fronts that move in the opposite directions inside and outside of the laser spot region. As a consequence, within the laser spot region, the background and photo-detached electron energy distribution function relaxes/thermalizes via collisionless effects such as Fermi acceleration and Landau damping. Moreover, the simulations show that collisional effects and the DL electric field strength might play a non-negligible role in the negative ion recovery within the laser spot region, leading to a two-temperature negative ion distribution. The latter result might have important effects in the determination of the negative ion density and temperature from laser photo detachment diagnostic.« less

Numerical simulations used for a validity check on the laser induced photo-detachment diagnostic method in electronegative plasmas

NASA Astrophysics Data System (ADS)

Oudini, N.; Taccogna, F.; Bendib, A.; Aanesland, A.

2014-06-01

Laser photo-detachment is used as a method to measure or determine the negative ion density and temperature in electronegative plasmas. In essence, the method consists of producing an electropositive channel (negative ion free region) via pulsed laser photo-detachment within an electronegative plasma bulk. Electrostatic probes placed in this channel measure the change in the electron density. A second pulse might be used to track the negative ion recovery. From this, the negative ion density and temperature can be determined. We study the formation and relaxation of the electropositive channel via a two-dimensional Particle-In-Cell/Mote Carlo collision model. The simulation is mainly carried out in a Hydrogen plasma with an electronegativity of α = 1, with a parametric study for α up to 20. The temporal and spatial evolution of the plasma potential and the electron densities shows the formation of a double layer (DL) confining the photo-detached electrons within the electropositive channel. This DL evolves into two fronts that move in the opposite directions inside and outside of the laser spot region. As a consequence, within the laser spot region, the background and photo-detached electron energy distribution function relaxes/thermalizes via collisionless effects such as Fermi acceleration and Landau damping. Moreover, the simulations show that collisional effects and the DL electric field strength might play a non-negligible role in the negative ion recovery within the laser spot region, leading to a two-temperature negative ion distribution. The latter result might have important effects in the determination of the negative ion density and temperature from laser photo detachment diagnostic.

Upgrades and Real Time Ntm Control Application of the Ece Radiometer on Asdex Upgrade

NASA Astrophysics Data System (ADS)

Hicks, N. K.; Suttrop, W.; Behler, K.; Giannone, L.; Manini, A.; Maraschek, M.; Raupp, G.; Reich, M.; Sips, A. C. C.; Stober, J.; Treutterer, W.; ASDEX Upgrade Team; Cirant, S.

2009-04-01

The 60-channel electron cyclotron emission (ECE) radiometer diagnostic on the ASDEX Upgrade tokamak is presently being upgraded to include a 1 MHz sampling rate data acquisition system. This expanded capability allows electron temperature measurements up to 500 kHz (anti-aliasing filter cut-off) with spatial resolution ~1 cm, and will thus provide measurement of plasma phenomena on the MHD timescale, such as neoclassical tearing modes (NTMs). The upgraded and existing systems may be run in parallel for comparison, and some of the first plasma measurements using the two systems together are presented. A particular planned application of the upgraded radiometer is integration into a real-time NTM stabilization loop using targeted deposition of electron cyclotron resonance heating (ECRH). For this loop, it is necessary to determine the locations of the NTM and ECRH deposition using ECE measurements. As the magnetic island of the NTM repeatedly rotates through the ECE line of sight, electron temperature fluctuations at the NTM frequency are observed. The magnetic perturbation caused by the NTM is independently measured using Mirnov coils, and a correlation profile between these magnetic measurements and the ECE data is constructed. The phase difference between ECE oscillations on opposite sides of the island manifests as a zero-crossing of the correlation profile, which determines the NTM location in ECE channel space. To determine the location of ECRH power deposition, the power from a given gyrotron may be modulated at a particular frequency. Correlation analysis of this modulated signal and the ECE data identifies a particular ECE channel associated with the deposition of that gyrotron. Real time equilibrium reconstruction allows the ECE channels to be translated into flux surface and spatial coordinates for use in the feedback loop.

Theory of Semiconducting Superlattices and Microstructures

DTIC Science & Technology

1992-03-01

the on-site energies a., range from - D12 to +D/2’. The calculations have been executed repeatedly W 2 for a single spin channel ’ and for finite...Spin can be neglected, because the occurs fo~r N =20 electrons. M = 40 lattice sites, recoil profiles 1(E) for each spin channel are indepen- and =100...values e, with rrobability I -x, and er, that one car e~aluate the Ijac s;-;;e-s fk, each of theie eB (with probability x). channels inuependentl. and

Inexpensive read-out for coincident electron spectroscopy with a transmission electron microscope at nanometer scale using micro channel plates and multistrip anodes

NASA Astrophysics Data System (ADS)

Hollander, R. W.; Bom, V. R.; van Eijk, C. W. E.; Faber, J. S.; Hoevers, H.; Kruit, P.

1994-09-01

The elemental composition of a sample at nanometer scale is determined by measurement of the characteristic energy of Auger electrons, emitted in coincidence with incoming primary electrons from a microbeam in a scanning transmission electron microscope (STEM). Single electrons are detected with position sensitive detectors, consisting of MicroChannel Plates (MCP) and MultiStrip Anodes (MSA), one for the energy of the Auger electrons (Auger-detector) and one for the energy loss of primary electrons (EELS-detector). The MSAs are sensed with LeCroy 2735DC preamplifiers. The fast readout is based on LeCroy's PCOS III system. On the detection of a coincidence (Event) energy data of Auger and EELS are combined with timing data to an Event word. Event words are stored in list mode in a VME memory module. Blocks of Event words are scanned by transputers in VME and two-dimensional energy histograms are filled using the timing information to obtain a maximal true/accidental ratio. The resulting histograms are stored on disk of a PC-386, which also controls data taking. The system is designed to handle 10 5 Events per second, 90% of which are accidental. In the histograms the "true" to "accidental" ratio will be 5. The dead time is 15%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Xueguang, E-mail: xue.g.ren@ptb.de; Pflüger, Thomas; Weyland, Marvin

The ionization and fragmentation of methane induced by low-energy (E{sub 0} = 66 eV) electron-impact is investigated using a reaction microscope. The momentum vectors of all three charged final state particles, two outgoing electrons, and one fragment ion, are detected in coincidence. Compared to the earlier study [Xu et al., J. Chem. Phys. 138, 134307 (2013)], considerable improvements to the instrumental mass and energy resolutions have been achieved. The fragment products CH{sub 4}{sup +}, CH{sub 3}{sup +}, CH{sub 2}{sup +}, CH{sup +}, and C{sup +} are clearly resolved. The binding energy resolution of ΔE = 2.0 eV is a factormore » of three better than in the earlier measurements. The fragmentation channels are investigated by measuring the ion kinetic energy distributions and the binding energy spectra. While being mostly in consistence with existing photoionization studies the results show differences including missing fragmentation channels and previously unseen channels.« less

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

NASA Astrophysics Data System (ADS)

Tiwari, Durgesh Laxman; Sivasankaran, K.

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

Cloud screening Coastal Zone Color Scanner images using channel 5

NASA Technical Reports Server (NTRS)

Eckstein, B. A.; Simpson, J. J.

1991-01-01

Clouds are removed from Coastal Zone Color Scanner (CZCS) data using channel 5. Instrumentation problems require pre-processing of channel 5 before an intelligent cloud-screening algorithm can be used. For example, at intervals of about 16 lines, the sensor records anomalously low radiances. Moreover, the calibration equation yields negative radiances when the sensor records zero counts, and pixels corrupted by electronic overshoot must also be excluded. The remaining pixels may then be used in conjunction with the procedure of Simpson and Humphrey to determine the CZCS cloud mask. These results plus in situ observations of phytoplankton pigment concentration show that pre-processing and proper cloud-screening of CZCS data are necessary for accurate satellite-derived pigment concentrations. This is especially true in the coastal margins, where pigment content is high and image distortion associated with electronic overshoot is also present. The pre-processing algorithm is critical to obtaining accurate global estimates of pigment from spacecraft data.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

PubMed

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Theoretical studies of photoexcitation and ionization in H2O

NASA Technical Reports Server (NTRS)

Diercksen, G. H. F.; Kraemer, W. P.; Rescigno, T. N.; Bender, C. F.; Mckoy, B. V.; Langhoff, S. R.; Langhoff, P. W.

1982-01-01

Theoretical studies using Franck-Condon and static-exchange approximations are reported for the complete dipole excitation and ionization spectrum in H2O, where (1) large Cartesian Gaussian basis sets are used to represent the required discrete and continuum electronic eigenfunctions at the ground state equilibrium geometry, and (2) previously devised moment-theory techniques are employed in constructing the continuum oscillator-strength densities from the calculated spectra. Comparisons are made of the calculated excitation and ionization profiles with recent experimental photoabsorption studies and corresponding spectral assignments, electron impact-excitation cross sections, and dipole and synchrotron-radiation studies of partial-channel photoionization cross sections. The calculated partial-channel cross sections are found to be atomic-like, and dominated by 2p-kd components. It is suggested that the latter transition couples with the underlying 1b(1)-kb(1) channel, accounting for a prominent feature in recent synchrotron-radiation measurements.

Studies of Resistive-Wall Instability with Space-Charge Dominated Electron Beams

NASA Astrophysics Data System (ADS)

Wang, J. G.; Suk, H.; Reiser, M.

1996-05-01

An experiment to study the resistive-wall instability with space-charge dominated electrom beams is underway at the University of Maryland. The beams with localized perturbations are launched from a gridded electron gun and are matched into a resistive channel focused by a uniform solenoid. The channel is made of a 1-m long glass tube coated with resistive material (ITO). Two different tubes with 5.4 kΩ and 10.1 kΩ resistance, respectively, have been employed. Two fast wall-current monitors at both the entrance and exit of the channel provide the information about the instability. Typical beam parameters are 3-8 keV in energy, 30-80 mA in current and 100 ns in duration. The experiment has shown the growth of localized slow waves and decay of fast waves. The results are presented and compared with theory. The status of the experiment and future work are also discussed.

Imaging CF3I conical intersection and photodissociation dynamics by ultrafast electron diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie

Conical intersections play a critical role in excited state dynamics of polyatomic molecules, as they govern the reaction pathways of many nonadiabatic processes. However, ultrafast probes have lacked sufficient spatial resolution to image wavepacket trajectories through these intersections directly. Here we present the simultaneous experimental characterization of one-photon and two-photon excitation channels in isolated CF3I molecules using ultrafast gas phase electron diffraction. In the two-photon channel, we have mapped out the real space trajectories of a coherent nuclear wavepacket, which bifurcates onto two potential energy surfaces when passing through a conical intersection. In the one-photon channel, we have resolved excitationmore » of both the umbrella and the breathing vibrational modes in the CF3 fragment in multiple nuclear dimensions. These findings benchmark and validate ab-initio nonadiabatic dynamics calculations.« less

Herpes simplex virus 1 induces egress channels through marginalized host chromatin

DOE PAGES

Myllys, Markko; Ruokolainen, Visa; Aho, Vesa; ...

2016-06-28

Lytic infection with herpes simplex virus type 1 (HSV-1) induces profound modification of the cell nucleus including formation of a viral replication compartment and chromatin marginalization into the nuclear periphery. Here, we used three-dimensional soft X-ray tomography, combined with cryogenic fluorescence, confocal and electron microscopy, to analyse the transformation of peripheral chromatin during HSV-1 infection. Our data showed an increased presence of low-density gaps in the marginalized chromatin at late infection. Advanced data analysis indicated the formation of virus-nucleocapsid-sized (or wider) channels extending through the compacted chromatin of the host. Importantly, confocal and electron microscopy analysis showed that these gapsmore » frequently contained viral nucleocapsids. Our results demonstrated that HSV-1 infection induces the formation of channels penetrating the compacted layer of cellular chromatin and allowing for the passage of progeny viruses to the nuclear envelope, their site of nuclear egress.« less

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.

Recombinant Production, Reconstruction in Lipid-Protein Nanodiscs, and Electron Microscopy of Full-Length α-Subunit of Human Potassium Channel Kv7.1.

PubMed

Shenkarev, Z O; Karlova, M G; Kulbatskii, D S; Kirpichnikov, M P; Lyukmanova, E N; Sokolova, O S

2018-05-01

Voltage-gated potassium channel Kv7.1 plays an important role in the excitability of cardiac muscle. The α-subunit of Kv7.1 (KCNQ1) is the main structural element of this channel. Tetramerization of KCNQ1 in the membrane results in formation of an ion channel, which comprises a pore and four voltage-sensing domains. Mutations in the human KCNQ1 gene are one of the major causes of inherited arrhythmias, long QT syndrome in particular. The construct encoding full-length human KCNQ1 protein was synthesized in this work, and an expression system in the Pichia pastoris yeast cells was developed. The membrane fraction of the yeast cells containing the recombinant protein (rKCNQ1) was solubilized with CHAPS detergent. To better mimic the lipid environment of the channel, lipid-protein nanodiscs were formed using solubilized membrane fraction and MSP2N2 protein. The rKCNQ1/nanodisc and rKCNQ1/CHAPS samples were purified using the Rho1D4 tag introduced at the C-terminus of the protein. Protein samples were examined using transmission electron microscopy with negative staining. In both cases, homogeneous rKCNQ1 samples were observed based on image analysis. Statistical analysis of the images of individual protein particles solubilized in the detergent revealed the presence of a tetrameric structure confirming intact subunit assembly. A three-dimensional channel structure reconstructed at 2.5-nm resolution represents a compact density with diameter of the membrane part of ~9 nm and height ~11 nm. Analysis of the images of rKCNQ1 in nanodiscs revealed additional electron density corresponding to the lipid bilayer fragment and the MSP2N2 protein. These results indicate that the nanodiscs facilitate protein isolation, purification, and stabilization in solution and can be used for further structural studies of human Kv7.1.

OpenPET: A Flexible Electronics System for Radiotracer Imaging

NASA Astrophysics Data System (ADS)

Moses, W. W.; Buckley, S.; Vu, C.; Peng, Q.; Pavlov, N.; Choong, W.-S.; Wu, J.; Jackson, C.

2010-10-01

We present the design for OpenPET, an electronics readout system designed for prototype radiotracer imaging instruments. The critical requirements are that it has sufficient performance, channel count, channel density, and power consumption to service a complete camera, and yet be simple, flexible, and customizable enough to be used with almost any detector or camera design. An important feature of this system is that each analog input is processed independently. Each input can be configured to accept signals of either polarity as well as either differential or ground referenced signals. Each signal is digitized by a continuously sampled ADC, which is processed by an FPGA to extract pulse height information. A leading edge discriminator creates a timing edge that is “time stamped” by a TDC implemented inside the FPGA. This digital information from each channel is sent to an FPGA that services 16 analog channels, and information from multiple channels is processed by this FPGA to perform logic for crystal lookup, DOI calculation, calibration, etc. As all of this processing is controlled by firmware and software, it can be modified/customized easily. The system is open source, meaning that all technical data (specifications, schematics and board layout files, source code, and instructions) will be publicly available.

Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

PubMed

Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

2018-01-31

The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

An FPGA-based data acquisition system for directional dark matter detection

NASA Astrophysics Data System (ADS)

Yang, Chen; Nicoloff, Catherine; Sanaullah, Ahmed; Sridhar, Arvind; Herbordt, Martin; Battat, James; Battat Lab at Wellesley College Team; CAAD Lab at Boston University Team

2017-01-01

Directional dark matter detection is a powerful tool in the search for dark matter. Low-pressure gas TPCs are commonly used for directional detection, and dark-matter-induced recoils are mm long. These tracks can be reconstructed by micropatterned readouts. Because large detector volumes are needed, a cost-effective data acquisition system capable of scaling to large channel counts (105 or 106) is required. The Directional Recoil Identification From Tracks (DRIFT) collaboration has pioneered the use of TPCs for directional detection. We employ a negative ion gas with drift speed comparable to the electron drift speed in liquid argon (LAr). We aim to use electronics developed for million-channel readouts in large LAr neutrino detectors. We have built a prototype Micromegas-based directional detector with 103 channels. A FPGA-based back-end system (BE) receives a 12 Gbps data stream from eight ASIC-based front-end boards (FE), each with 128 detector channels. The BE buffers 3 μs of pretrigger data for all channels in DRAM, and streams triggered data to a host PC. We will describe the system architecture and present preliminary measurements from the DAQ. We acknowledge the support of the Research Corporation for Science Advancement, the NSF and the Massachusetts Space Grant Consortium.

Resistance modulation in VO2 nanowires induced by an electric field via air-gap gates

NASA Astrophysics Data System (ADS)

Kanki, Teruo; Chikanari, Masashi; Wei, Tingting; Tanaka, Hidekazu; The Institute of Scientific; Industrial Research Team

Vanadium dioxide (VO2) shows huge resistance change with metal-insulator transition (MIT) at around room temperature. Controlling of the MIT by applying an electric field is a topical ongoing research toward the realization of Mott transistor. In this study, we have successfully switched channel resistance of VO2 nano-wire channels by a pure electrostatic field effect using a side-gate-type field-effect transistor (SG-FET) viaair gap and found that single crystalline VO2 nanowires and the channels with narrower width enhance transport modulation rate. The rate of change in resistance ((R0-R)/R, where R0 and R is the resistance of VO2 channel with off state and on state gate voltage (VG) , respectively) was 0.42 % at VG = 30 V in in-plane poly-crystalline VO2 channels on Al2O3(0001) substrates, while the rate in single crystalline channels on TiO2 (001) substrates was 3.84 %, which was 9 times higher than that using the poly-crystalline channels. With reducing wire width from 3000 nm to 400 nm of VO2 on TiO2 (001) substrate, furthermore, resistance modulation ratio enhanced from 0.67 % to 3.84 %. This change can not be explained by a simple free-electron model. In this presentation, we will compare the electronic properties between in-plane polycrystalline VO2 on Al2O3 (0001) and single crystalline VO2 on TiO2 (001) substrates, and show experimental data in detail..

Autoradiographic localization of voltage-dependent sodium channels on the mouse neuromuscular junction using /sup 125/I-alpha scorpion toxin. I. Preferential labeling of glial cells on the presynaptic side

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boudier, J.L.; Jover, E.; Cau, P.

1988-05-01

Alpha-scorpion toxins bind specifically to the voltage-sensitive sodium channel in excitable membranes, and binding is potential-dependent. The radioiodinated toxin II from the scorpion Androctonus australis Hector (alpha ScTx) was used to localize voltage-sensitive sodium channels on the presynaptic side of mouse neuromuscular junctions (NMJ) by autoradiography using both light and electron microscopy. Silver grain localization was analyzed by the cross-fire method. At the light-microscopic level, grain density over NMJ appeared 6-8x higher than over nonjunctional muscle membrane. The specificity of labeling was verified by competition/displacement with an excess of native alpha ScTx. Labeling was also inhibited by incubation in depolarizingmore » conditions, showing its potential-dependence. At the electron-microscopic level, analysis showed that voltage-sensitive sodium channels labeled with alpha ScTx were almost exclusively localized on membranes, as expected. Due to washout after incubation, appreciable numbers of binding sites were not found on the postsynaptic membranes. However, on the presynaptic side, alpha ScTx-labeled voltage-sensitive sodium channels were localized on the membrane of non-myelin-forming Schwann cells covering NMJ. The axonal presynaptic membrane was not labeled. These results show that voltage-sensitive sodium channels are present on glial cells in vivo, as already demonstrated in vitro. It is proposed that these glial channels could be indirectly involved in the ionic homeostasis of the axonal environment.« less

Controlled injection using a channel pinch in a plasma-channel-guided laser wakefield accelerator

NASA Astrophysics Data System (ADS)

Liu, Jiaqi; Zhang, Zhijun; Liu, Jiansheng; Li, Wentao; Wang, Wentao; Yu, Changhai; Qi, Rong; Qin, Zhiyong; Fang, Ming; Wu, Ying; Feng, Ke; Ke, Lintong; Wang, Cheng; Li, Ruxin

2018-06-01

Plasma-channel-guided laser plasma accelerators make it possible to drive high-brilliance compact radiation sources and have high-energy physics applications. Achieving tunable internal injection of the electron beam (e beam) inside the plasma channel, which realizes a tunable radiation source, is a challenging method to extend such applications. In this paper, we propose the use of a channel pinch, which is designed as an initial reduction followed by an expansion of the channel radius along the plasma channel, to achieve internal controlled off-axis e beam injection in a channel-guided laser plasma accelerator. The off-axis injection is triggered by bubble deformation in the expansion region. The dynamics of the plasma wake is explored, and the trapping threshold is found to be reduced radially in the channel pinch. Simulation results show that the channel pinch not only triggers injection process localized at the pinch but also modulates the parameters of the e beam by adjusting its density profile, which can additionally accommodate a tunable radiation source via betatron oscillation.

Compact pulse width modulation circuitry for silicon photomultiplier readout.

PubMed

Bieniosek, M F; Olcott, P D; Levin, C S

2013-08-07

The adoption of solid-state photodetectors for positron emission tomography (PET) system design and the interest in 3D interaction information from PET detectors has lead to an increasing number of readout channels in PET systems. To handle these additional readout channels, PET readout electronics should be simplified to reduce the power consumption, cost, and size of the electronics for a single channel. Pulse-width modulation (PWM), where detector pulses are converted to digital pulses with width proportional to the detected photon energy, promises to simplify PET readout by converting the signals to digital form at the beginning of the processing chain, and allowing a single time-to-digital converter to perform the data acquisition for many channels rather than routing many analogue channels and digitizing in the back end. Integrator based PWM systems, also known as charge-to-time converters (QTCs), are especially compact, reducing the front-end electronics to an op-amp integrator with a resistor discharge, and a comparator. QTCs, however, have a long dead-time during which dark count noise is integrated, reducing the output signal-to-noise ratio. This work presents a QTC based PWM circuit with a gated integrator that shows performance improvements over existing QTC based PWM. By opening and closing an analogue switch on the input of the integrator, the circuit can be controlled to integrate only the portions of the signal with a high signal-to-noise ratio. It also allows for multiplexing different detectors into the same PWM circuit while avoiding uncorrelated noise propagation between photodetector channels. Four gated integrator PWM circuits were built to readout the spatial channels of two position sensitive solid-state photomultiplier (PS-SSPM). Results show a 4 × 4 array 0.9 mm × 0.9 mm × 15 mm of LYSO crystals being identified on the 5 mm × 5 mm PS-SSPM at room temperature with no degradation for twofold multiplexing. In principle, much larger multiplexing ratios are possible, limited only by count rate issues.

Computer simulations of Hall thrusters without wall losses designed using two permanent magnetic rings

NASA Astrophysics Data System (ADS)

Yongjie, Ding; Wuji, Peng; Liqiu, Wei; Guoshun, Sun; Hong, Li; Daren, Yu

2016-11-01

A type of Hall thruster without wall losses is designed by adding two permanent magnet rings in the magnetic circuit. The maximum strength of the magnetic field is set outside the channel. Discharge without wall losses is achieved by pushing down the magnetic field and adjusting the channel accordingly. The feasibility of the Hall thrusters without wall losses is verified via a numerical simulation. The simulation results show that the ionization region is located in the discharge channel and the acceleration region is outside the channel, which decreases the energy and flux of ions and electrons spattering on the wall. The power deposition on the channel walls can be reduced by approximately 30 times.

Nonsequential double ionization channels control of Ar with few-cycle elliptically polarized laser pulse by carrier-envelope-phase.

PubMed

Ben, Shuai; Wang, Tian; Xu, Tongtong; Guo, Jing; Liu, Xueshen

2016-04-04

The carrier-envelop-phase (CEP) dependence of nonsequential double ionization (NSDI) of atomic Ar with few-cycle elliptically polarized laser pulse is investigated using 2D classical ensemble method. We distinguish two particular recollision channels in NSDI, which are recollision-impact ionization (RII) and recollision-induced excitation with subsequent ionization (RESI). We separate the RII and RESI channels according to the delay time between recollision and final double ionization. By tracing the history of the trajectories, we find the electron correlation spectra as well as the competition between the two channels are sensitively dependent on the laser field CEP. Finally, control can be achieved between the two channels by varying the CEP.

Medicare Preventive and Screening Services

MedlinePlus

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Virtual Ionosonde Construction by using ITS and IRI-2012 models

NASA Astrophysics Data System (ADS)

Kabasakal, Mehmet; Toker, Cenk

2016-07-01

Ionosonde is a kind of radar which is used to examine several properties of the ionosphere, including the electron density and drift velocity. Ionosonde is an expensive device and its installation requires special expertise and a proper area clear of sources of radio interference. In order to overcome the difficulties of installing an ionosonde hardware, the target of this study is to construct a virtual ionosonde based on communication channel models where the model parameters are determined by ray tracing obtained by the PHaRLAP software and the International Reference Ionosphere (IRI-2012) model. Although narrowband high frequency (HF) communication models have been widely used to represent the behaviour of the radio channel, they are applicable to a limited set of actual propagation conditions and wideband models are needed to better understand the HF channel. In 1997, the Institute for Telecommunication Science (ITS) developed a wideband HF ionospheric model, the so-called ITS model, however, it has some restrictions in real life applications. The ITS model parameters are grouped into two parts; the deterministic and the stochastic parameters. The deterministic parameters are the delay time (tau _{c}) of each reflection path based on the penetration frequency (f _{p}), the height (h _{0}) of the maximum electron density and the half thickness (sigma) of the reflective layer. The stochastic parameters, delay spread (sigma _{tau}), delay rise time (sigma _{c}), Doppler spread (sigma _{D}), Doppler shift (f _{s}), are to calculate the impulse response of the channel. These parameters are generally difficult to obtain and are based on the measured data which may not be available in all cases. In order to obtain these parameters, we propose to integrate the PHaRLAP ray tracing toolbox and the IRI-2012 model. When Total Electron Content (TEC) estimates obtained from GNSS measurements are input to IRI-2012, the model generates electron density profiles close to the actual profiles, which are used for ray tracing between the user defined geographical coordinates. Then, ITS model parameters are obtained from both ray tracing and also the IRI-2012 model. Finally, an ionosonde signal waveform is transmitted through the channel obtained from the ITS model to generate the ionogram. As an application, oblique sounding between two points is simulated with ITS channel model. M-sequence, Barker sequence and complementary sequences are used as sounding waveforms. The effects of channel on the oblique ionogram and sounding waveform characteristics are also investigated.

Towards a Structural View of Drug Binding to hERG K+ Channels.

PubMed

Vandenberg, Jamie I; Perozo, Eduardo; Allen, Toby W

2017-10-01

The human ether-a-go-go-related gene (hERG) K + channel is of great medical and pharmaceutical relevance. Inherited mutations in hERG result in congenital long-QT syndrome which is associated with a markedly increased risk of cardiac arrhythmia and sudden death. hERG K + channels are also remarkably susceptible to block by a wide range of drugs, which in turn can cause drug-induced long-QT syndrome and an increased risk of sudden death. The recent determination of the near-atomic resolution structure of the hERG K + channel, using single-particle cryo-electron microscopy (cryo-EM), provides tremendous insights into how these channels work. It also suggests a way forward in our quest to understand why these channels are so promiscuous with respect to drug binding. Copyright © 2017 Elsevier Ltd. All rights reserved.

Structure of the skeletal muscle calcium release channel activated with Ca2+ and AMP-PCP.

PubMed Central

Serysheva, I I; Schatz, M; van Heel, M; Chiu, W; Hamilton, S L

1999-01-01

The functional state of the skeletal muscle Ca2+ release channel is modulated by a number of endogenous molecules during excitation-contraction. Using electron cryomicroscopy and angular reconstitution techniques, we determined the three-dimensional (3D) structure of the skeletal muscle Ca2+ release channel activated by a nonhydrolyzable analog of ATP in the presence of Ca2+. These ligands together produce almost maximum activation of the channel and drive the channel population toward a predominately open state. The resulting 30-A 3D reconstruction reveals long-range conformational changes in the cytoplasmic region that might affect the interaction of the Ca2+ release channel with the t-tubule voltage sensor. In addition, a central opening and mass movements, detected in the transmembrane domain of both the Ca(2+)- and the Ca2+/nucleotide-activated channels, suggest a mechanism for channel opening similar to opening-closing of the iris in a camera diaphragm. PMID:10512814

Recent progress in n-channel organic thin-film transistors.

PubMed

Wen, Yugeng; Liu, Yunqi

2010-03-26

Particular attention has been focused on n-channel organic thin-film transistors (OTFTs) during the last few years, and the potentially cost-effective circuitry-based applications in flexible electronics, such as flexible radiofrequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n-channel semiconductors in the past five years, and limitations and practicable solutions for n-channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin-film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field.

RATIO COMPUTER

DOEpatents

Post, R.F.

1958-11-11

An electronic computer circuit is described for producing an output voltage proportional to the product or quotient of tbe voltages of a pair of input signals. ln essence, the disclosed invention provides a computer having two channels adapted to receive separate input signals and each having amplifiers with like fixed amplification factors and like negatlve feedback amplifiers. One of the channels receives a constant signal for comparison purposes, whereby a difference signal is produced to control the amplification factors of the variable feedback amplifiers. The output of the other channel is thereby proportional to the product or quotient of input signals depending upon the relation of input to fixed signals in the first mentioned channel.

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrappedmore » around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.« less

Embedded electronics for a video-rate distributed aperture passive millimeter-wave imager

NASA Astrophysics Data System (ADS)

Curt, Petersen F.; Bonnett, James; Schuetz, Christopher A.; Martin, Richard D.

2013-05-01

Optical upconversion for a distributed aperture millimeter wave imaging system is highly beneficial due to its superior bandwidth and limited susceptibility to EMI. These features mean the same technology can be used to collect information across a wide spectrum, as well as in harsh environments. Some practical uses of this technology include safety of flight in degraded visual environments (DVE), imaging through smoke and fog, and even electronic warfare. Using fiber-optics in the distributed aperture poses a particularly challenging problem with respect to maintaining coherence of the information between channels. In order to capture an image, the antenna aperture must be electronically steered and focused to a particular distance. Further, the state of the phased array must be maintained, even as environmental factors such as vibration, temperature and humidity adversely affect the propagation of the signals through the optical fibers. This phenomenon cannot be avoided or mitigated, but rather must be compensated for using a closed-loop control system. In this paper, we present an implementation of embedded electronics designed specifically for this purpose. This novel architecture is efficiently small, scalable to many simultaneously operating channels and sufficiently robust. We present our results, which include integration into a 220 channel imager and phase stability measurements as the system is stressed according to MIL-STD-810F vibration profiles of an H-53E heavy-lift helicopter.

Fluctuations, Electron Transport, and Flow Shear in 2D Axial, Azimuthal (z-θ) Hybrid Hall Thruster Simulations.

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Gascon, Nicolas; Knoll, Aaron; Scharfe, Michelle; Cappelli, Mark

2007-11-01

Motivated by the inability of radial-axial (r-z) simulations to properly treat cross-field electron transport in Hall thrusters, a novel 2D z-θ model has been implemented. In common with many r-z descriptions, the simulation is hybrid in nature and assumes quasi-neutrality. Unlike r-z models, electron transport is not enhanced with an ad-hoc mobility coefficient; instead it is given by collisional or ``classical'' terms as well as ``anomalous'' contributions associated with azimuthal electric field fluctuations. Results indicate that anomalous transport dominates classical transport for most of the channel and near field, except in a strong electron flow shear region near the channel exit. The correlation between flow shear, fluctuation behavior, and electron transport will be examined, along with experimental data from the Stanford Hall Thruster. Our findings make a strong link to the turbulent transport suppression mechanism by flow shear seen in fusion devices. The scheme for combining the r-z and z-θ descriptions into an upcoming 3D hybrid model will be presented.

Flat ion milling: a powerful tool for preparation of cross-sections of lead-silver alloys.

PubMed

Brodusch, Nicolas; Boisvert, Sophie; Gauvin, Raynald

2013-06-01

While conventional mechanical and chemical polishing results in stress, deformation and polishing particles embedded on the surface, flat milling with Ar+ ions erodes the material with no mechanical artefacts. This flat milling process is presented as an alternative method to prepare a Pb-Ag alloy cross-section for scanning electron microscopy. The resulting surface is free of scratches with very little to no stress induced, so that electron diffraction and channelling contrast are possible. The results have shown that energy dispersive spectrometer (EDS) mapping, electron channelling contrast imaging and electron backscatter diffraction can be conducted with only one sample preparation step. Electron diffraction patterns acquired at 5 keV possessed very good pattern quality, highlighting an excellent surface condition. An orientation map was acquired at 20 keV with an indexing rate of 90.1%. An EDS map was performed at 5 keV, and Pb-Ag precipitates of sizes lower than 100 nm were observed. However, the drawback of the method is the generation of a noticeable surface topography resulting from the interaction of the ion beam with a polycrystalline and biphasic sample.

Functional Description of Read-out Electronics for Time-Domain Multiplexed Bolometers for Millimeter and Sub-millimeter Astronomy

NASA Astrophysics Data System (ADS)

Battistelli, E. S.; Amiri, M.; Burger, B.; Halpern, M.; Knotek, S.; Ellis, M.; Gao, X.; Kelly, D.; Macintosh, M.; Irwin, K.; Reintsema, C.

2008-05-01

We have developed multi-channel electronics (MCE) which work in concert with time-domain multiplexors developed at NIST, to control and read signals from large format bolometer arrays of superconducting transition edge sensors (TESs). These electronics were developed as part of the Submillimeter Common-User Bolometer Array-2 (SCUBA2 ) camera, but are now used in several other instruments. The main advantages of these electronics compared to earlier versions is that they are multi-channel, fully programmable, suited for remote operations and provide a clean geometry, with no electrical cabling outside of the Faraday cage formed by the cryostat and the electronics chassis. The MCE is used to determine the optimal operating points for the TES and the superconducting quantum interference device (SQUID) amplifiers autonomously. During observation, the MCE execute a running PID-servo and apply to each first stage SQUID a feedback signal necessary to keep the system in a linear regime at optimal gain. The feedback and error signals from a ˜1000-pixel array can be written to hard drive at up to 2 kHz.

Development of low-noise CCD drive electronics for the world space observatory ultraviolet spectrograph subsystem

NASA Astrophysics Data System (ADS)

Salter, Mike; Clapp, Matthew; King, James; Morse, Tom; Mihalcea, Ionut; Waltham, Nick; Hayes-Thakore, Chris

2016-07-01

World Space Observatory Ultraviolet (WSO-UV) is a major Russian-led international collaboration to develop a large space-borne 1.7 m Ritchey-Chrétien telescope and instrumentation to study the universe at ultraviolet wavelengths between 115 nm and 320 nm, exceeding the current capabilities of ground-based instruments. The WSO Ultraviolet Spectrograph subsystem (WUVS) is led by the Institute of Astronomy of the Russian Academy of Sciences and consists of two high resolution spectrographs covering the Far-UV range of 115-176 nm and the Near-UV range of 174-310 nm, and a long-slit spectrograph covering the wavelength range of 115-305 nm. The custom-designed CCD sensors and cryostat assemblies are being provided by e2v technologies (UK). STFC RAL Space is providing the Camera Electronics Boxes (CEBs) which house the CCD drive electronics for each of the three WUVS channels. This paper presents the results of the detailed characterisation of the WUVS CCD drive electronics. The electronics include a novel high-performance video channel design that utilises Digital Correlated Double Sampling (DCDS) to enable low-noise readout of the CCD at a range of pixel frequencies, including a baseline requirement of less than 3 electrons rms readout noise for the combined CCD and electronics system at a readout rate of 50 kpixels/s. These results illustrate the performance of this new video architecture as part of a wider electronics sub-system that is designed for use in the space environment. In addition to the DCDS video channels, the CEB provides all the bias voltages and clocking waveforms required to operate the CCD and the system is fully programmable via a primary and redundant SpaceWire interface. The development of the CEB electronics design has undergone critical design review and the results presented were obtained using the engineering-grade electronics box. A variety of parameters and tests are included ranging from general system metrics, such as the power and mass, to more detailed analysis of the video performance including noise, linearity, crosstalk, gain stability and transient response.

Digital Electronics for Nuclear Physics Experiments

NASA Astrophysics Data System (ADS)

Skulski, Wojtek; Hunter, David; Druszkiewicz, Eryk; Khaitan, Dev Ashish; Yin, Jun; Wolfs, Frank; SkuTek Instrumentation Team; Department of Physics; Astronomy, University of Rochester Team

2015-10-01

Future detectors in nuclear physics will use signal sampling as one of primary techniques of data acquisition. Using the digitized waveforms, the electronics can select events based on pulse shape, total energy, multiplicity, and the hit pattern. The DAQ for the LZ Dark Matter detector, now under development in Rochester, is a good example of the power of digital signal processing. This system, designed around 32-channel, FPGA-based, digital signal processors collects data from more than one thousand channels. The solutions developed for this DAQ can be applied to nuclear physics experiments. Supported by the Department of Energy Office of Science under Grant DE-SC0009543.

Electronic Ambient-Temperature Recorder

NASA Technical Reports Server (NTRS)

Russell, Larry; Barrows, William

1995-01-01

Electronic temperature-recording unit stores data in internal memory for later readout. Records temperatures from minus 40 degrees to plus 60 degrees C at intervals ranging from 1.875 to 15 minutes. With all four data channels operating at 1.875-minute intervals, recorder stores at least 10 days' data. For only one channel at 15-minute intervals, capacity extends to up to 342 days' data. Developed for recording temperatures of instruments and life-science experiments on satellites, space shuttle, and high-altitude aircraft. Adaptable to such terrestrial uses as recording temperatures of perishable goods during transportation and of other systems or processes over long times. Can be placed directly in environment to monitor.

A 16-ch module for thermal neutron detection using ZnS:6LiF scintillator with embedded WLS fibers coupled to SiPMs and its dedicated readout electronics

NASA Astrophysics Data System (ADS)

Mosset, J.-B.; Stoykov, A.; Greuter, U.; Gromov, A.; Hildebrandt, M.; Panzner, T.; Schlumpf, N.

2017-02-01

A scalable 16-ch thermal neutron detection system has been developed in the framework of the upgrade of a neutron diffractometer. The detector is based on a ZnS:6LiF scintillator with embedded WLS fibers which are read out with SiPMs. In this paper, we present the 16-ch module, the dedicated readout electronics, a direct comparison between the performance of the diffractometer obtained with the current 3He detector and with the 16-ch detection module, and the channel-to-channel uniformity.

Performance study of large area encoding readout MRPC

NASA Astrophysics Data System (ADS)

Chen, X. L.; Wang, Y.; Chen, G.; Han, D.; Wang, X.; Zeng, M.; Zeng, Z.; Zhao, Z.; Guo, B.

2018-02-01

Muon tomography system built by the 2-D readout high spatial resolution Multi-gap Resistive Plate Chamber (MRPC) detector is a project of Tsinghua University. An encoding readout method based on the fine-fine configuration has been used to minimize the number of the readout electronic channels resulting in reducing the complexity and the cost of the system. In this paper, we provide a systematic comparison of the MRPC detector performance with and without fine-fine encoding readout. Our results suggest that the application of the fine-fine encoding readout leads us to achieve a detecting system with slightly worse spatial resolution but dramatically reduce the number of electronic channels.

Optimization of the microcable and detector parameters towards low noise in the STS readout system

NASA Astrophysics Data System (ADS)

Kasinski, Krzysztof; Kleczek, Rafal; Schmidt, Christian J.

2015-09-01

Successful operation of the Silicon Tracking System requires charge measurement of each hit with equivalent noise charge lower than 1000 e- rms. Detector channels will not be identical, they will be constructed accordingly to the estimated occupancy, therefore for the readout electronics, detector system will exhibit various parameters. This paper presents the simulation-based study on the required microcable (trace width, dielectric material), detector (aluminum strip resistance) and external passives' (decoupling capacitors) parameters in the Silicon Tracking System. Studies will be performed using a front-end electronics (charge sensitive amplifier with shaper) designed for the power budget of 10 mA/channel.

Biomolecule detection based on Si single-electron transistors for practical use

NASA Astrophysics Data System (ADS)

Nakajima, Anri; Kudo, Takashi; Furuse, Sadaharu

2013-07-01

Experimental and theoretical analyses demonstrated that ultra-sensitive biomolecule detection can be achieved using a Si single-electron transistor (SET). A multi-island channel structure was used to enable room-temperature operation. Coulomb oscillation increases transconductance without increasing channel width, which increases detection sensitivity to a charged target. A biotin-modified SET biosensor was used to detect streptavidin at a dilute concentration. In addition, an antibody-functionalized SET biosensor was used for immunodetection of prostate-specific antigen, demonstrating its suitability for practical use. The feasibility of ultra-sensitive detection of biomolecules for practical use by using a SET biosensor was clearly proven through this systematic study.

Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition

NASA Astrophysics Data System (ADS)

Oh, Himchan; Hwang, Chi-Sun; Pi, Jae-Eun; Ki Ryu, Min; Ko Park, Sang-Hee; Yong Chu, Hye

2013-09-01

We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length.

High-Throughput Synthesis and Structure of Zeolite ZSM-43 with Two-Directional 8-Ring Channels.

PubMed

Willhammar, Tom; Su, Jie; Yun, Yifeng; Zou, Xiaodong; Afeworki, Mobae; Weston, Simon C; Vroman, Hilda B; Lonergan, William W; Strohmaier, Karl G

2017-08-07

The aluminosilicate zeolite ZSM-43 (where ZSM = Zeolite Socony Mobil) was first synthesized more than 3 decades ago, but its chemical structure remained unsolved because of its poor crystallinity and small crystal size. Here we present optimization of the ZSM-43 synthesis using a high-throughput approach and subsequent structure determination by the combination of electron crystallographic methods and powder X-ray diffraction. The synthesis required the use of a combination of both inorganic (Cs + and K + ) and organic (choline) structure-directing agents. High-throughput synthesis enabled a screening of the synthesis conditions, which made it possible to optimize the synthesis, despite its complexity, in order to obtain a material with significantly improved crystallinity. When both rotation electron diffraction and high-resolution transmission electron microscopy imaging techniques are applied, the structure of ZSM-43 could be determined. The structure of ZSM-43 is a new zeolite framework type and possesses a unique two-dimensional channel system limited by 8-ring channels. ZSM-43 is stable upon calcination, and sorption measurements show that the material is suitable for adsorption of carbon dioxide as well as methane.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

The upgrade of the Thomson scattering system for measurement on the C-2/C-2U devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, K.; Schindler, T.; Kinley, J.

The C-2/C-2U Thomson scattering system has been substantially upgraded during the latter phase of C-2/C-2U program. A Rayleigh channel has been added to each of the three polychromators of the C-2/C-2U Thomson scattering system. Onsite spectral calibration has been applied to avoid the issue of different channel responses at different spots on the photomultiplier tube surface. With the added Rayleigh channel, the absolute intensity response of the system is calibrated with Rayleigh scattering in argon gas from 0.1 to 4 Torr, where the Rayleigh scattering signal is comparable to the Thomson scattering signal at electron densities from 1 × 10{supmore » 13} to 4 × 10{sup 14} cm{sup −3}. A new signal processing algorithm, using a maximum likelihood method and including detailed analysis of different noise contributions within the system, has been developed to obtain electron temperature and density profiles. The system setup, spectral and intensity calibration procedure and its outcome, data analysis, and the results of electron temperature/density profile measurements will be presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Funsten, Herbert O.; Harper, Ronnie W.; Dors, Eric E.

Channel electron multiplier (CEM) and microchannel plate (MCP) detectors are routinely used in space instrumentation for measurement of space plasmas. Here, our goal is to understand the relative sensitivities of these detectors to penetrating radiation in space, which can generate background counts and shorten detector lifetime. We use 662 keV γ-rays as a proxy for penetrating radiation such as γ-rays, cosmic rays, and high-energy electrons and protons that are ubiquitous in the space environment. We find that MCP detectors are ~20 times more sensitive to 662 keV γ-rays than CEM detectors. This is attributed to the larger total area ofmore » multiplication channels in an MCP detector that is sensitive to electronic excitation and ionization resulting from the interaction of penetrating radiation with the detector material. In contrast to the CEM detector, whose quantum efficiency ε γ for 662 keVγ -rays is found to be 0.00175 and largely independent of detector bias, the quantum efficiency of the MCP detector is strongly dependent on the detector bias, with a power law index of 5.5. Lastly, background counts in MCP detectors from penetrating radiation can be reduced using MCP geometries with higher pitch and smaller channel diameter.« less

Electronic drive and acquisition system for mass spectrometry

NASA Technical Reports Server (NTRS)

Schaefer, Rembrandt Thomas (Inventor); Chutjian, Ara (Inventor); Tran, Tuan (Inventor); Madzunkov, Stojan M. (Inventor); Thomas, John L. (Inventor); Mojarradi, Mohammad (Inventor); MacAskill, John (Inventor); Blaes, Brent R. (Inventor); Darrach, Murray R. (Inventor); Burke, Gary R. (Inventor)

2010-01-01

The present invention discloses a mixed signal RF drive electronics board that offers small, low power, reliable, and customizable method for driving and generating mass spectra from a mass spectrometer, and for control of other functions such as electron ionizer, ion focusing, single-ion detection, multi-channel data accumulation and, if desired, front-end interfaces such as pumps, valves, heaters, and columns.

Electronics and triggering challenges for the CMS High Granularity Calorimeter

NASA Astrophysics Data System (ADS)

Lobanov, A.

2018-02-01

The High Granularity Calorimeter (HGCAL), presently being designed by the CMS collaboration to replace the CMS endcap calorimeters for the High Luminosity phase of LHC, will feature six million channels distributed over 52 longitudinal layers. The requirements for the front-end electronics are extremely challenging, including high dynamic range (0.2 fC-10 pC), low noise (~2000 e- to be able to calibrate on single minimum ionising particles throughout the detector lifetime) and low power consumption (~20 mW/channel), as well as the need to select and transmit trigger information with a high granularity. Exploiting the intrinsic precision-timing capabilities of silicon sensors also requires careful design of the front-end electronics as well as the whole system, particularly clock distribution. The harsh radiation environment and requirement to keep the whole detector as dense as possible will require novel solutions to the on-detector electronics layout. Processing the data from the HGCAL imposes equally large challenges on the off-detector electronics, both for the hardware and incorporated algorithms. We present an overview of the complete electronics architecture, as well as the performance of prototype components and algorithms.

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Toporkov, M.; Özgür, Ü.; Morkoç, H.

2018-05-01

High-field electron transport in two-dimensional channels at ZnO/MgZnO heterointerfaces has been investigated experimentally. Pulsed current-voltage (I-V) and microwave noise measurements used voltage pulse widths down to 30 ns and electric fields up to 100 kV/cm. The samples investigated featured electron densities in the range of 4.2-6.5 × 1012 cm-2, and room temperature mobilities of 142-185 cm2/V s. The pulsed nature of the applied field ensured negligible, if any, change in the electron density, thereby allowing velocity extraction from current with confidence. The highest extracted electron drift velocity of ˜0.5 × 107 cm/s is somewhat smaller than that estimated for bulk ZnO; this difference is explained in the framework of longitudinal optical phonon accumulation (hot-phonon effect). The microwave noise data allowed us to rule out the effect of excess acoustic phonon temperature caused by Joule heating. Real-space transfer of hot electrons into the wider bandgap MgZnO layer was observed to be a limiting factor in samples with a high Mg content (48%), due to phase segregation and the associated local lowering of the potential barrier.

Lysine 362 in cytochrome c oxidase regulates opening of the K-channel via changes in pKA and conformation.

PubMed

Woelke, Anna Lena; Galstyan, Gegham; Knapp, Ernst-Walter

2014-12-01

The metabolism of aerobic life uses the conversion of molecular oxygen to water as an energy source. This reaction is catalyzed by cytochrome e oxidase (CeO) consuming four electrons and four protons, which move along specific routes. While all four electrons are transferred via the same cofactors to the binuclear reaction center (BNC), the protons take two different routes in the A-type CeO, i.e., two of the four chemical protons consumed in the reaction arrive via the D-channel in the oxidative first half starting after oxygen binding. The other two chemical protons enter via the K-channel in the reductive second half of the reaction cycle. To date, the mechanism behind these separate proton transport pathways has not been understood. In this study, we propose a model that can explain the reaction-step specific opening and closing of the K-channel by conformational and pKA changes of its central lysine 362. Molecular dynamics simulations reveal an upward movement of Lys362 towards the BNC, which had already been supposed by several experimental studies. Redox state-dependent pKA calculations provide evidence that Lys362 may protonate transiently, thereby opening the K-channel only in the reductive second half of the reaction cycle. From our results, we develop a model that assigns a key role to Lys362 in the proton gating between the two proton input channels of the A-type CeO.

Ion acoustic wave assisted laser beat wave terahertz generation in a plasma channel

NASA Astrophysics Data System (ADS)

Tyagi, Yachna; Tripathi, Deepak; Walia, Keshav; Garg, Deepak

2018-04-01

Resonant excitation of terahertz (THz) radiation by non-linear mixing of two lasers in the presence of an electrostatic wave is investigated. The electrostatic wave assists in k matching and contributes to non-linear coupling. In this plasma channel, the electron plasma frequency becomes minimum on the axis. The beat frequency ponderomotive force imparts an oscillating velocity to the electrons. In the presence of an ion-acoustic wave, density perturbation due to the ion-acoustic wave couples with the oscillating velocity of the electrons and give rise to non-linear current that gives rise to an ion-acoustic wave frequency assisted THz radiation field. The normalized field amplitude of ion acoustic wave assisted THz varies inversely for ω/ωp . The field amplitude of ion acoustic wave assisted THz decreases as ω/ωp increases.

Oxide-based synaptic transistors gated by solution-processed gelatin electrolytes

NASA Astrophysics Data System (ADS)

He, Yinke; Sun, Jia; Qian, Chuan; Kong, Ling-An; Gou, Guangyang; Li, Hongjian

2017-04-01

In human brain, a large number of neurons are connected via synapses. Simulation of the synaptic behaviors using electronic devices is the most important step for neuromorphic systems. In this paper, proton conducting gelatin electrolyte-gated oxide field-effect transistors (FETs) were used for emulating synaptic functions, in which the gate electrode is regarded as pre-synaptic neuron and the channel layer as the post-synaptic neuron. In analogy to the biological synapse, a potential spike can be applied at the gate electrode and trigger ionic motion in the gelatin electrolyte, which in turn generates excitatory post-synaptic current (EPSC) in the channel layer. Basic synaptic behaviors including spike time-dependent EPSC, paired-pulse facilitation (PPF), self-adaptation, and frequency-dependent synaptic transmission were successfully mimicked. Such ionic/electronic hybrid devices are beneficial for synaptic electronics and brain-inspired neuromorphic systems.

Laser Hole Boring into Overdense Plasma and Relativistic Electron Currents for Fast Ignition of ICF Targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pukhov, A.; Meyer-ter-Vehn, J.

Laser hole boring and relativistic electron transport into plasma of 10 times critical density is studied by means of 2D particle-in-cell simulation. At intensities of I{sub 0}{lambda}{sup 2}=10{sup 20} W(cm){sup {minus}2} {mu}m{sup 2}, a channel 12{lambda} deep and 3{lambda} in diameter has formed after 200 laser cycles. The laser driven electron current carries up to 40{percent} of the incident laser power. When penetrating the overdense region, it breaks up into several filaments at early times, but is channeled into a single magnetized jet later on. These features are essential for fast ignition of targets for inertial confinement fusion (ICF). {copyright}more » {ital 1997} {ital The American Physical Society}« less

Channeling of electron transport to improve collection efficiency in mesoporous titanium dioxide dye sensitized solar cell stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakharuddin, Azhar; Ahmed, Irfan; Yusoff, Mashitah M.

2014-02-03

Dye-sensitized solar cell (DSC) modules are generally made by interconnecting large photoelectrode strips with optimized thickness (∼14 μm) and show lower current density (J{sub SC}) compared with their single cells. We found out that the key to achieving higher J{sub SC} in large area devices is optimized photoelectrode volume (V{sub D}), viz., thickness and area which facilitate the electron channeling towards working electrode. By imposing constraints on electronic path in a DSC stack, we achieved >50% increased J{sub SC} and ∼60% increment in photoelectric conversion efficiency in photoelectrodes of similar V{sub D} (∼3.36 × 10{sup −4} cm{sup 3}) without using any metallic gridmore » or a special interconnections.« less

Open-channel integrating-type flow meter

USGS Publications Warehouse

Koopman, K.C.

1971-01-01

A relatively inexpensive meter for measuring cumulative flow in open channels with a rated control,. called a "totalizer", was developed. It translates the nonlinear function of gage height to flow by use of a cam and a float. A variable resistance element in an electronic circuit is controlled by the float so that the electron flow in the circuit corresponds to the flow of water. The flow of electricity causes electroplating of an electrode with silver. The amount of silver deposited is proportionate to the flow of water. The total flow of water is determined by removing the silver from the electrode at a fixed rate with ·an electronic device and recording the time for removal with a counter. The circuit is designed so that the ,resultant reading on the counter is in acre-feet of water.

Extensive electron transport and energization via multiple, localized dipolarizing flux bundles

NASA Astrophysics Data System (ADS)

Gabrielse, Christine; Angelopoulos, Vassilis; Harris, Camilla; Artemyev, Anton; Kepko, Larry; Runov, Andrei

2017-05-01

Using an analytical model of multiple dipolarizing flux bundles (DFBs) embedded in earthward traveling bursty bulk flows, we demonstrate how equatorially mirroring electrons can travel long distances and gain hundreds of keV from betatron acceleration. The model parameters are constrained by four Time History of Events and Macroscale Interactions during Substorms satellite observations, putting limits on the DFBs' speed, location, and magnetic and electric field magnitudes. We find that the sharp, localized peaks in magnetic field have such strong spatial gradients that energetic electrons ∇B drift in closed paths around the peaks as those peaks travel earthward. This is understood in terms of the third adiabatic invariant, which remains constant when the field changes on timescales longer than the electron's drift timescale: An energetic electron encircles a sharp peak in magnetic field in a closed path subtending an area of approximately constant flux. As the flux bundle magnetic field increases the electron's drift path area shrinks and the electron is prevented from escaping to the ambient plasma sheet, while it continues to gain energy via betatron acceleration. When the flux bundles arrive at and merge with the inner magnetosphere, where the background field is strong, the electrons suddenly gain access to previously closed drift paths around the Earth. DFBs are therefore instrumental in transporting and energizing energetic electrons over long distances along the magnetotail, bringing them to the inner magnetosphere and energizing them by hundreds of keV.