Science.gov

Sample records for electron device letters

  1. Resource Letter: TE-1: Teaching electronics

    NASA Astrophysics Data System (ADS)

    Henry, Dennis C.

    2002-01-01

    This Resource Letter examines the evolution, roles, and content of courses in electronics in the undergraduate physics curriculum, and provides a guide to resources for faculty teaching such courses. It concludes with a brief section addressing problems of electromagnetic interference in electronic systems, and provides an introduction to the literature and practice of electromagnetic compatibility. I have included textbooks, reference books, articles, collections of laboratory experiments and projects, sources of equipment and parts, software packages, videos, and websites.

  2. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  3. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  4. Electronic security device

    DOEpatents

    Eschbach, Eugene A.; LeBlanc, Edward J.; Griffin, Jeffrey W.

    1992-01-01

    The present invention relates to a security device having a control box (12) containing an electronic system (50) and a communications loop (14) over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system (50) and a detection module (72) capable of registering changes in the voltage and phase of the signal transmitted over the loop.

  5. Electronic security device

    DOEpatents

    Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

    1992-03-17

    The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

  6. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  7. Nanoscale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Jing, Xiaoye

    Continuous downscaling in microelectronics has pushed conventional CMOS technology to its physical limits, while Moore's Law has correctly predicted the trend for decades, each step forward is accompanied with unprecedented technological difficulties and near-exponential increase in cost. At the same time, however, demands for low-power, low-cost and high-speed devices have never diminished, instead, even more stringent requirements have been imposed on device performances. It is therefore crucial to explore alternative materials and device architectures in order to alleviate the pressure caused by downscaling. To this end, we investigated two different approaches: (1) InSb nanowire based field effect transistors (NWFETs) and (2) single walled carbon nanotube (SWCNT) -- peptide nucleic acid (PNA) --SWCNT conjugate. Two types of InSb nanowires were synthesized by template-assisted electrochemistry and chemical vapor deposition (CVD) respectively. In both cases, NWFETs were fabricated by electron beam lithography (EBL) and crystallinity was confirmed by transmission electron microscopy (TEM) and selected area diffraction (SAD) patterns. For electrochemistry nanowire, ambipolar conduction was observed with strong p-type conduction, the effect of thermal annealing on the conductivity was analyzed, a NWFET model that took into consideration the underlapped region in top-gated NWFET was proposed. Hole mobility in the channel was calculated to be 292.84 cm2V-1s -1 with a density of 1.5x1017/cm3. For CVD nanowire, the diameter was below 40nm with an average of 20nm. Vapor-liquid-solid (VLS) process was speculated to be the mechanism responsible for nanowire growth. The efficient gate control was manifested by high ION/I OFF ratio which was on the order of 106 and a small inverse subthreshold slope (<200 mV/decade). Scale analysis was used to successfully account for disparities observed among a number of sample devices. N-type conduction was found in all NWFETs with

  8. Letters

    NASA Astrophysics Data System (ADS)

    2001-03-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE Contents: Force on a pendulum Sound slows down Bond is back Force on a pendulum The simple pendulum has been used by several educationalists for investigating the patterns of thinking among students and their observations that Aristotelian thinking persists among students at college level. I had also considered the simple pendulum in my 1985 letter in Physics Today [1], so I was interested to read the test given by Lenka Czudková and Jana Musilová [2]. When students were asked to draw net forces acting on the particle at various positions, 31.9% of students believed that the net force was tangential to the particle's path the whole time. To me this is no surprise because in our derivation of the equation for the period of a simple pendulum we assume that the unbalanced sine component provides the restoring force for the harmonic motion of the bob. Of course, Czudková and Musilová's question asked students for the net force on the particle, not the component. The student's answer fits well with the logic of the equilibrium of forces and the parallelogram law. Lastly, let me bring out the similarity between the student's answer and the thinking of George Gamow. He used to call positrons 'donkey' electrons because of their displacement against the applied force, before Paul Dirac termed them positrons. Victor Weisskeptf told me this anecdote in a letter in May 1982. References [1] Sathe D 1985 Phys. Today 38 144 [2] Czudková L and Musilová J 2000 Phys. Educ. 35 428 Dileep V Sathe Dadawala Jr College, Pune, India Sound slows down Without wanting to stir up more trouble amongst the already muddy waters of Physics teaching, consider how many times you have heard (or, more worryingly, read) this: 'Sound waves travel faster in a denser material' But...The velocity of simple longitudinal waves in a bulk medium is given by v = (K/ρ)1/2 where K is

  9. Synaptic devices based on purely electronic memristors

    NASA Astrophysics Data System (ADS)

    Pan, Ruobing; Li, Jun; Zhuge, Fei; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao; Fu, Bing; Li, Kang

    2016-01-01

    Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

  10. Letters

    NASA Astrophysics Data System (ADS)

    2001-07-01

    child is charged. Because folk are so poor, the fees have to be very low and the resources bought are consequently minimal. Apparatus for physics lessons? Very rarely. Electricity, gas and water services to the labs? Sometimes. Physics textbooks? Very few, old and battered through much use. I visited the David Kuanda School in Lusaka, a high status technical school, and there met some very impressive teachers. Were they doing technical subjects like electronics and car maintenance? No, they could not afford to buy the required equipment, and thus did the academic subjects, physics, chemistry and maths etc, which were cheaper as they could be taught with 'chalk and talk'! Were their students bright, resourceful and keen to learn? They certainly were. Despite all these difficulties the teachers were seeking to teach, and help their students enjoy, the same physics that is common around the world—and prepare them for very similar exams at GCE and A-level, in English. If anyone would like to help a Zambian secondary school, perhaps by sending a set of physics texts no longer used here, or by providing some other resources, perhaps by forming a personal link with a school in Zambia, please contact me and I would be happy to help with arrangements. I could guarantee that you, and your students, would gain an enormous amount from such links—as well as making a real contribution to the development of a less favoured country. Brian E Woolnough Oxford University, UK brian.woolnough@edstud.ox.ac.uk Pedantry or compromise I write in response to S Wynchank's letter in the May issue entitled 'Grammar and Gender'. Many have been using 'They' as common-sex third-person pronoun for years, in order to avoid the irritating and clumsy 'Him or Her'. This commonsense compromise is logically compatible with the universal use of 'They' to include the singular... OF EITHER SEX! For example, in 'Those who ignore this instruction may lose their right to compensation.', both 'Those' and 'their

  11. Letters

    NASA Astrophysics Data System (ADS)

    2001-07-01

    child is charged. Because folk are so poor, the fees have to be very low and the resources bought are consequently minimal. Apparatus for physics lessons? Very rarely. Electricity, gas and water services to the labs? Sometimes. Physics textbooks? Very few, old and battered through much use. I visited the David Kuanda School in Lusaka, a high status technical school, and there met some very impressive teachers. Were they doing technical subjects like electronics and car maintenance? No, they could not afford to buy the required equipment, and thus did the academic subjects, physics, chemistry and maths etc, which were cheaper as they could be taught with 'chalk and talk'! Were their students bright, resourceful and keen to learn? They certainly were. Despite all these difficulties the teachers were seeking to teach, and help their students enjoy, the same physics that is common around the world—and prepare them for very similar exams at GCE and A-level, in English. If anyone would like to help a Zambian secondary school, perhaps by sending a set of physics texts no longer used here, or by providing some other resources, perhaps by forming a personal link with a school in Zambia, please contact me and I would be happy to help with arrangements. I could guarantee that you, and your students, would gain an enormous amount from such links—as well as making a real contribution to the development of a less favoured country. Brian E Woolnough Oxford University, UK brian.woolnough@edstud.ox.ac.uk Pedantry or compromise I write in response to S Wynchank's letter in the May issue entitled 'Grammar and Gender'. Many have been using 'They' as common-sex third-person pronoun for years, in order to avoid the irritating and clumsy 'Him or Her'. This commonsense compromise is logically compatible with the universal use of 'They' to include the singular... OF EITHER SEX! For example, in 'Those who ignore this instruction may lose their right to compensation.', both 'Those' and 'their

  12. Letters

    NASA Astrophysics Data System (ADS)

    2001-03-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE Contents: Force on a pendulum Sound slows down Bond is back Force on a pendulum The simple pendulum has been used by several educationalists for investigating the patterns of thinking among students and their observations that Aristotelian thinking persists among students at college level. I had also considered the simple pendulum in my 1985 letter in Physics Today [1], so I was interested to read the test given by Lenka Czudková and Jana Musilová [2]. When students were asked to draw net forces acting on the particle at various positions, 31.9% of students believed that the net force was tangential to the particle's path the whole time. To me this is no surprise because in our derivation of the equation for the period of a simple pendulum we assume that the unbalanced sine component provides the restoring force for the harmonic motion of the bob. Of course, Czudková and Musilová's question asked students for the net force on the particle, not the component. The student's answer fits well with the logic of the equilibrium of forces and the parallelogram law. Lastly, let me bring out the similarity between the student's answer and the thinking of George Gamow. He used to call positrons 'donkey' electrons because of their displacement against the applied force, before Paul Dirac termed them positrons. Victor Weisskeptf told me this anecdote in a letter in May 1982. References [1] Sathe D 1985 Phys. Today 38 144 [2] Czudková L and Musilová J 2000 Phys. Educ. 35 428 Dileep V Sathe Dadawala Jr College, Pune, India Sound slows down Without wanting to stir up more trouble amongst the already muddy waters of Physics teaching, consider how many times you have heard (or, more worryingly, read) this: 'Sound waves travel faster in a denser material' But...The velocity of simple longitudinal waves in a bulk medium is given by v = (K/ρ)1/2 where K is

  13. Hybrid free electron laser devices

    SciTech Connect

    Asgekar, Vivek; Dattoli, G.

    2007-03-15

    We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

  14. Letters

    NASA Astrophysics Data System (ADS)

    2001-05-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE, UK. Contents: Quantum uncertainties Reflections in a plastic box A brief history of quantum physics Correction Grammar and gender Quantum uncertainties Whilst I enjoyed Gesche Pospiech's article ('Uncertainty and complementarity: the heart of quantum physics' 2000 Phys. Educ. 35 393 9) I would like to expand on two comments he makes. Firstly the author claims that QM is linear, and a consequence of this is that any two superimposed states form an admissible third state. This is rather too sweeping, as it is true only for degenerate states. Otherwise quantum mechanics would allow a continuum of energies between states by a simple admixture of levels. The proof of this statement is trivial. For a Hamiltonian H and two orthogonal wavefunctions, ψ1 and ψ2 with energies E1 and E2 then (ψ1 + ψ2) is not an eigenfunction of that Hamiltonian as H(ψ1 + ψ2) = E1ψ1 + E2ψ2 ≠ E(ψ1 + ψ2) for any value of E, unless E1 = E2. Secondly Pospiech states that quantum objects show wave- or particle-like behaviour, depending on the measuring apparatus, and that occasionally experiments (such as Taylor's) reveal both. I would contest the validity of this type of thinking. All experiments on quantum objects reveal both types of behaviour—even ones which simply show straight line motion of photons. What is important, in addition, is our interpretation of the results. It takes an understanding of QED, for example, to see that an experiment which otherwise shows particle behaviour is, in fact, showing quantum behaviour. More contentiously though I would suggest that detection apparatus is incapable of detecting anything other than particles. Wave-like behaviour is revealed only by an analysis of the paths the particle could have taken. In other words, the interference of continuous fields sometimes predicts the same results when the detection is averaged over many events

  15. 9 CFR 316.7 - Marking devices not to be false or misleading; style and size of lettering; approval required.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Federal meat grading regulations (7 CFR 53.19) need not be submitted to the Administrator for approval. ... lettering; approval required. No brand or other marking device shall be false or misleading. The letters...

  16. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2014-12-09

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  17. Stretchable and foldable electronic devices

    DOEpatents

    Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

    2013-10-08

    Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

  18. Letters

    NASA Astrophysics Data System (ADS)

    2001-01-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE, UK. Contents: Maths for physics? Help! Fire! Energy and mass Maths for physics? As a maths graduate working as a university research associate I should be well qualified to support my daughter, who has just started AS-level physics, with the maths she needs for the course. There seems to be little integration between the maths and physics departments, so that maths needed for physics has not yet been covered in maths lessons. This is a problem I remember from my own school days, but the shorter timescale and modular nature of the AS and A2 levels means that it is essential that this mismatch of knowledge is resolved now. I would like to know whether physics teachers in the UK have encountered this problem and whether there is a deficiency in the maths syllabus in relation to the requirements of the AS and A2 levels in Physics or whether this is a problem peculiar to my daughter's school. Eleanor Parent of A-level student, Sheffield, UK Help! Fire! Is there a crisis in physics education? Is physics didactics coming to an end? Yes and no. Being a delegate from Norway at the on-going conference Physics on Stage (6-10 November 2000) at CERN in Geneva, I have had the opportunity to discuss this with people from all over Europe. Yes, there is a crisis. (Look at the proceedings for details on this.) I'd like to take a broader look at this situation. Like Hari Seldon in Isaac Asimov's Foundation Trilogy, I believe that there is nothing like a real crisis to get things going... Famous is the quote from the American Patent Office around 1890: 'Everything has been invented that could be invented'. Fortunately, this spurred action. The Michelson and Morley experiment heralded a most exciting period for physics. Just a cosmic blink later we put a person on the Moon. Coming back to the crisis - I am certain that in the near future we will see an interesting development

  19. Electronic measurement correction devices

    SciTech Connect

    Mahns, R.R.

    1984-04-01

    The electronics semi-conductor revolution has touched every industry and home in the nation. The gas industry is no exception. Sophisticated gas measurement instrumentation has been with us for several decades now, but only in the last 10 years or so has it really begun to boom. First marketed were the flow computers dedicated to orifice meter measurement; but with steadily decreasing manufacturing costs, electronic instrumentation is now moving into the area of base volume, pressure and temperature correction previously handled almost solely by mechanical integrating instruments. This paper takes a brief look at some of the features of the newcomers on the market and how they stack up against the old standby mechanical base volume/pressure/temperature correctors.

  20. Letters

    NASA Astrophysics Data System (ADS)

    2001-09-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE, UK. Contents: M-set as metaphor The abuse of algebra M-set as metaphor 'To see a World in a Grain of Sand And a Heaven in a Wild Flower Hold Infinity in the palm of your hand And Eternity in an hour' William Blake's implied relativity of spatial and temporal scales is intriguing and, given the durability of this worlds-within-worlds concept (he wrote in 1803) in art, literature and science, the blurring of distinctions between the very large and the very small must strike some kind of harmonious chord in the human mind. Could this concept apply to the physical world? To be honest, we cannot be absolutely sure. Most cosmological thinking still retains the usual notions of a finite universe and an absolute size scale extending from smallest to largest objects. In the boundless realm of mathematics, however, the story is quite different. The M-set was discovered by the French mathematician Benoit Mandelbrot in 1980, created by just a few simple lines of computer code that are repeated recursively. As in Blake's poem, this 'world' has no bottom we have an almost palpable archetype for the concept of infinity. I would use the word 'tangible', but one of the defining features of the M-set is that nowhere in the labyrinth can one find a surface smooth enough for a tangent. Upon magnification even surfaces that appeared to be smooth explode with quills and scrolls and lightning bolts and spiral staircases. And there is something more, something truly sublime. Observe a small patch with unlimited magnifying power and, as you observe the M-set on ever-smaller scales, down through literally endless layers of ornate structure, you occasionally come upon a rapidly expanding cortex of dazzling colour with a small black structure at its centre. The black spot appears to be the M-set itself! There is no end to the hierarchy, no bottom-most level, just endless recursive

  1. Letters

    NASA Astrophysics Data System (ADS)

    2001-09-01

    The Editor welcomes letters, by e-mail to ped@iop.org or by post to Dirac House, Temple Back, Bristol BS1 6BE, UK. Contents: M-set as metaphor The abuse of algebra M-set as metaphor 'To see a World in a Grain of Sand And a Heaven in a Wild Flower Hold Infinity in the palm of your hand And Eternity in an hour' William Blake's implied relativity of spatial and temporal scales is intriguing and, given the durability of this worlds-within-worlds concept (he wrote in 1803) in art, literature and science, the blurring of distinctions between the very large and the very small must strike some kind of harmonious chord in the human mind. Could this concept apply to the physical world? To be honest, we cannot be absolutely sure. Most cosmological thinking still retains the usual notions of a finite universe and an absolute size scale extending from smallest to largest objects. In the boundless realm of mathematics, however, the story is quite different. The M-set was discovered by the French mathematician Benoit Mandelbrot in 1980, created by just a few simple lines of computer code that are repeated recursively. As in Blake's poem, this 'world' has no bottom we have an almost palpable archetype for the concept of infinity. I would use the word 'tangible', but one of the defining features of the M-set is that nowhere in the labyrinth can one find a surface smooth enough for a tangent. Upon magnification even surfaces that appeared to be smooth explode with quills and scrolls and lightning bolts and spiral staircases. And there is something more, something truly sublime. Observe a small patch with unlimited magnifying power and, as you observe the M-set on ever-smaller scales, down through literally endless layers of ornate structure, you occasionally come upon a rapidly expanding cortex of dazzling colour with a small black structure at its centre. The black spot appears to be the M-set itself! There is no end to the hierarchy, no bottom-most level, just endless recursive

  2. Polymer electronic devices and materials.

    SciTech Connect

    Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

    2006-01-01

    Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

  3. Ion plated electronic tube device

    DOEpatents

    Meek, T.T.

    1983-10-18

    An electronic tube and associated circuitry which is produced by ion plating techniques. The process is carried out in an automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  4. Stretchable Hydrogel Electronics and Devices.

    PubMed

    Lin, Shaoting; Yuk, Hyunwoo; Zhang, Teng; Parada, German Alberto; Koo, Hyunwoo; Yu, Cunjiang; Zhao, Xuanhe

    2016-06-01

    Stretchable hydrogel electronics and devices are designed by integrating stretchable conductors, functional chips, drug-delivery channels, and reservoirs into stretchable, robust, and biocompatible hydrogel matrices. Novel applications include a smart wound dressing capable of sensing the temperatures of various locations on the skin, delivering different drugs to these locations, and subsequently maintaining sustained release of drugs.

  5. Stretchable Hydrogel Electronics and Devices.

    PubMed

    Lin, Shaoting; Yuk, Hyunwoo; Zhang, Teng; Parada, German Alberto; Koo, Hyunwoo; Yu, Cunjiang; Zhao, Xuanhe

    2016-06-01

    Stretchable hydrogel electronics and devices are designed by integrating stretchable conductors, functional chips, drug-delivery channels, and reservoirs into stretchable, robust, and biocompatible hydrogel matrices. Novel applications include a smart wound dressing capable of sensing the temperatures of various locations on the skin, delivering different drugs to these locations, and subsequently maintaining sustained release of drugs. PMID:26639322

  6. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  7. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  8. Carbon footprint of electronic devices

    NASA Astrophysics Data System (ADS)

    Sloma, Marcin

    2013-07-01

    Paper assesses the greenhouse gas emissions related to the electronic sectors including information and communication technology and media sectors. While media often presents the carbon emission problem of other industries like petroleum industry, the airlines and automobile sectors, plastics and steel manufacturers, the electronics industry must include the increasing carbon footprints caused from their applications like media and entertainment, computers and cooling devices, complex telecommunications networks, cloud computing and powerful mobile phones. In that sense greenhouse gas emission of electronics should be studied in a life cycle perspective, including regular operational electricity use. Paper presents which product groups or processes are major contributors in emission. From available data and extrapolation of existing information we know that the information and communication technology sector produced 1.3% and media sector 1.7% of global gas emissions within production cycle, using the data from 2007.In the same time global electricity use of that sectors was 3.9% and 3.2% respectively. The results indicate that for both sectors operation leads to more gas emissions than manufacture, although impacts from the manufacture is significant, especially in the supply chain. Media electronics led to more emissions than PCs (manufacture and operation). Examining the role of electronics in climate change, including disposal of its waste, will enable the industry to take internal actions, leading to lowering the impact on the climate change within the sector itself.

  9. Single Molecule Electronics and Devices

    PubMed Central

    Tsutsui, Makusu; Taniguchi, Masateru

    2012-01-01

    The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

  10. New electronic measurement, control devices

    NASA Astrophysics Data System (ADS)

    1985-04-01

    The electronic control device serves to measure the capacitance of the loss factor tg delta and the leakage current of tantalum and electrolytic capacitors. During the measurement of the leakage current, the capacitor can be polarized from an internal source with constant voltage regulated continuously from 0 to 100 V, or with a voltage of up to 500 V from an external source. The instrument has a system signalizing the loading state of the capacitor and a system for unloading it. The meter has two readout fields with LED display indicators: 3 and 5-digit for measuring the capacitance and the leakage current; 3-digit for measurement of tg delta and polarization intensity. The choice of the range for capacitance measurement can be done manually or from outside. The capacitance measurement is performed by the four-point technique in a serial replacement system. The meter with the corresponding interface block can operate in measurement systems according to IEC/ISP II standard.

  11. 78 FR 1247 - Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Tablet Computers, Media... United States after importation of certain electronic devices, including wireless communication devices... importation of certain electronic devices, including wireless communication devices, tablet computers,...

  12. Weak Values from Displacement Currents in Multiterminal Electron Devices.

    PubMed

    Marian, D; Zanghì, N; Oriols, X

    2016-03-18

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments. PMID:27035291

  13. Weak Values from Displacement Currents in Multiterminal Electron Devices

    NASA Astrophysics Data System (ADS)

    Marian, D.; Zanghı, N.; Oriols, X.

    2016-03-01

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments.

  14. Weak Values from Displacement Currents in Multiterminal Electron Devices.

    PubMed

    Marian, D; Zanghì, N; Oriols, X

    2016-03-18

    Weak values allow the measurement of observables associated with noncommuting operators. Up to now, position-momentum weak values have been mainly developed for (relativistic) photons. In this Letter, a proposal for the measurement of such weak values in typical electronic devices is presented. Inspired by the Ramo-Shockley-Pellegrini theorem that provides a relation between current and electron velocity, it is shown that the displacement current measured in multiterminal configurations can provide either a weak measurement of the momentum or strong measurement of position. This proposal opens new opportunities for fundamental and applied physics with state-of-the-art electronic technology. As an example, a setup for the measurement of the Bohmian velocity of (nonrelativistic) electrons is presented and tested with numerical experiments.

  15. 77 FR 50932 - Electronic Transmission of Customs Data-Outbound International Letter-Post Items

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-23

    ... 20 Electronic Transmission of Customs Data--Outbound International Letter-Post Items AGENCY: Postal... Standards of the United States Postal Service, International Mail Manual (IMM ) to require that customs data... receive your comments on or before September 24, 2012. ADDRESSES: Mail or deliver written comments to...

  16. Thermally triggered degradation of transient electronic devices.

    PubMed

    Park, Chan Woo; Kang, Seung-Kyun; Hernandez, Hector Lopez; Kaitz, Joshua A; Wie, Dae Seung; Shin, Jiho; Lee, Olivia P; Sottos, Nancy R; Moore, Jeffrey S; Rogers, John A; White, Scott R

    2015-07-01

    Thermally triggered transient electronics using wax-encapsulated acid, which enable rapid device destruction via acidic degradation of the metal electronic components are reported. Using a cyclic poly(phthalaldehyde) (cPPA) substrate affords a more rapid destruction of the device due to acidic depolymerization of cPPA.

  17. Synaptic electronics: materials, devices and applications.

    PubMed

    Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

    2013-09-27

    In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

  18. Silk Fibroin for Flexible Electronic Devices.

    PubMed

    Zhu, Bowen; Wang, Hong; Leow, Wan Ru; Cai, Yurong; Loh, Xian Jun; Han, Ming-Yong; Chen, Xiaodong

    2016-06-01

    Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

  19. High temperature electronic gain device

    DOEpatents

    McCormick, J. Byron; Depp, Steven W.; Hamilton, Douglas J.; Kerwin, William J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.

  20. Inverted organic electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Small, Cephas E.

    The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8

  1. Exploiting plasmon-induced hot electrons in molecular electronic devices.

    PubMed

    Conklin, David; Nanayakkara, Sanjini; Park, Tae-Hong; Lagadec, Marie F; Stecher, Joshua T; Chen, Xi; Therien, Michael J; Bonnell, Dawn A

    2013-05-28

    Plasmonic nanostructures can induce a number of interesting responses in devices. Here we show that hot electrons can be extracted from plasmonic particles and directed into a molecular electronic device, which represents a new mechanism of transfer from light to electronic transport. To isolate this phenomenon from alternative and sometimes simultaneous mechanisms of plasmon-exciton interactions, we designed a family of hybrid nanostructure devices consisting of Au nanoparticles and optoelectronically functional porphyin molecules that enable precise control of electronic and optical properties. Temperature- and wavelength-dependent transport measurements are analyzed in the context of optical absorption spectra of the molecules, the Au particle arrays, and the devices. Enhanced photocurrent associated with exciton generation in the molecule is distinguished from enhancements due to plasmon interactions. Mechanisms of plasmon-induced current are examined, and it is found that hot electron generation can be distinguished from other possibilities. PMID:23550717

  2. Sub-electron noise charge coupled devices

    NASA Technical Reports Server (NTRS)

    Chandler, Charles E.; Bredthauer, Richard A.; Janesick, James R.; Westphal, James A.; Gunn, James E.

    1990-01-01

    A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

  3. Mechanically driven electronic correction devices

    SciTech Connect

    Bennett, R.

    1995-12-01

    Mechanical correctors still remain in the field by the thousands and will continue to do so for a while. But the electronic corrector with its improved accuracy, lower service costs, and greater flexibility of communications and data logging will make great strides in the gas industry market in the coming years.

  4. Electronically Controlled Continuous Culture Device

    PubMed Central

    Eisler, William J.; Webb, Robert B.

    1968-01-01

    A photocell-controlled continuous culture device, a Nephelostat, is described that maintains a wide variety of cultures of microorganisms in balanced growth. This Nephelostat controls concentrations of bacteria within ±3% over a cell concentration range of 106 to 109 cells per ml. Growth rates are recorded so that changes in the growth rate are observed over small increments of time. Spontaneous and caffeine-induced mutation rates of two strains of Escherichia coli were compared under Nephelostat and chemostat conditions. Images Fig. 1 Fig. 3 Fig. 4 PMID:4877660

  5. Electronic cooling using thermoelectric devices

    SciTech Connect

    Zebarjadi, M.

    2015-05-18

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  6. Electronic cooling using thermoelectric devices

    NASA Astrophysics Data System (ADS)

    Zebarjadi, M.

    2015-05-01

    Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

  7. Electron cooling device for TARN II

    SciTech Connect

    Tanabe, T.; Hirao, Y.; Honma, T.; Kodaira, M.; Noda, A.; Sato, K.; Sekiguchi, M.; Takanaka, M.; Tanaka, J.; Tsujikawa, H.

    1985-10-01

    Light to heavy ions accelerated by a synchrotron TARN II are planned to be cooled by the electron cooling method. A device to cool these ions up to energies of 200 MeV/A is under construction. The electron energies are variable from 15 to 120 keV and the maximum current density is 0.5 A/cmS. The length of interaction region between electrons and ions is about 1.5 m. Design of the electron guiding coils and high voltage system is described as well as the calculated electron trajectories. The status and prospect for the cooling project are given.

  8. 77 FR 60720 - Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices, Including Wireless Commmunication Devices, Portable Music and Data... infringing electronic devices, including wireless communication devices, portable music and data...

  9. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  11. Towards reproducible, scalable lateral molecular electronic devices

    SciTech Connect

    Durkan, Colm Zhang, Qian

    2014-08-25

    An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

  12. Electronic device aspects of neural network memories

    NASA Technical Reports Server (NTRS)

    Lambe, J.; Moopenn, A.; Thakoor, A. P.

    1985-01-01

    The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

  13. Susceptor heating device for electron beam brazing

    DOEpatents

    Antieau, Susan M.; Johnson, Robert G. R.

    1999-01-01

    A brazing device and method are provided which locally apply a controlled amount of heat to a selected area, within a vacuum. The device brazes two components together with a brazing metal. A susceptor plate is placed in thermal contact with one of the components. A serrated pedestal supports the susceptor plate. When the pedestal and susceptor plate are in place, an electron gun irradiates an electron beam at the susceptor plate such that the susceptor plate is sufficiently heated to transfer heat through the one component and melt the brazing metal.

  14. HIRFL-CSR electron cooling devices

    NASA Astrophysics Data System (ADS)

    Yang, X. D.; Zhao, H. W.; Xia, J. W.; Zhan, W. L.; Wei, B. W.; Parkhomchuk, V. V.

    2001-12-01

    Electron cooling devices for HIRFL-CSR were under construction through collaboration between BINP and IMP [1]. The main parameters, design points and progress of the cooler devices will be presented. The electron motions in the gun region, adiabatic expansion region, toroid region and collector region were simulated with the help of numerical calculation. Cooling times of the typical heavy ions with injection energy were calculated with aid of the code. The prototypes of solenoid coils at the cooling section were fabricated and measured, the results show that the transverse components of the magnetic field for single coil is less than 2×10-4.

  15. RCRA toxicity characterization of discarded electronic devices.

    PubMed

    Musson, Stephen E; Vann, Kevin N; Jang, Yong-Chul; Mutha, Sarvesh; Jordan, Aaron; Pearson, Brian; Townsend, Timothy G

    2006-04-15

    The potential for discarded electronic devices to be classified as toxicity characteristic (TC) hazardous waste under provisions of the Resource Conservation and Recovery Act (RCRA) using the toxicity characteristic leaching procedure (TCLP) was examined. The regulatory TCLP method and two modified TCLP methods (in which devices were disassembled and leached in or near entirety) were utilized. Lead was the only element found to leach at concentrations greater than its TC limit (5 mg/L). Thirteen different types of electronic devices were tested using either the standard TCLP or modified versions. Every device type leached lead above 5 mg/L in at least one test and most devices leached lead above the TC limit in a majority of cases. Smaller devices that contained larger amounts of plastic and smaller amounts of ferrous metal (e.g., cellular phones, remote controls) tended to leach lead above the TC limit at a greater frequency than devices with more ferrous metal (e.g., computer CPUs, printers).

  16. Transient (lightning) protection for electronic measurement devices

    SciTech Connect

    Black, L.L.

    1995-12-01

    Electronic measurement devices have become a major part of the oil and gas business today. All of these devices operate on an electrical voltage. Any voltage introduced into the system that is beyond the predetermined tolerance will cause degradation of performance or in some cases failure of the device. The extent of the damage depends upon the dielectric strength of the circuit in question and upon the available energy. As electronic measurement devices are further developed to incorporate more solid state circuitry and operate at lower voltage levels the more susceptible they become to transients. Along with transient protection, the user must also be concerned with intrinsic safety requirements of the device to be protected. The devices and techniques used to protect the equipment from transients do not, in all cases, guarantee the user certification for use in hazardous environments. As a note of reference, some of the techniques listed in this paper as examples would not be allowed in hazardous areas without the addition of other devices to further isolate or clamp the available energy to a safe level. In other words, as the industry moves forward to improve the overall accuracy of the measurement system and adds data availability via communication networks, the transient protection scheme must become more sophisticated.

  17. Disabling CNT Electronic Devices by Use of Electron Beams

    NASA Technical Reports Server (NTRS)

    Petkov, Mihail

    2008-01-01

    Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide

  18. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2013-03-19

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  19. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2012-10-23

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  20. Organic electronic devices using phthalimide compounds

    DOEpatents

    Hassan, Azad M.; Thompson, Mark E.

    2010-09-07

    Organic electronic devices comprising a phthalimide compound. The phthalimide compounds disclosed herein are electron transporters with large HOMO-LUMO gaps, high triplet energies, large reduction potentials, and/or thermal and chemical stability. As such, these phthalimide compounds are suitable for use in any of various organic electronic devices, such as OLEDs and solar cells. In an OLED, the phthalimide compounds may serve various functions, such as a host in the emissive layer, as a hole blocking material, or as an electron transport material. In a solar cell, the phthalimide compounds may serve various functions, such as an exciton blocking material. Various examples of phthalimide compounds which may be suitable for use in the present invention are disclosed.

  1. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Wilson, Thomas S.; Hamilton, Julie K.; Benett, William J.; Tovar, Armando R.

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  2. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  3. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  4. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  5. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  6. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  7. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  8. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  9. 49 CFR 220.305 - Use of personal electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Use of personal electronic devices. 220.305... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.305 Use of personal electronic devices. A railroad operating employee must have each personal electronic device turned off...

  10. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  11. 49 CFR 220.303 - General use of electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false General use of electronic devices. 220.303 Section... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.303 General use of electronic devices. A railroad operating employee shall not use an electronic device if that use...

  12. Mathematical Modeling of Electronic Devices and Circuits

    NASA Astrophysics Data System (ADS)

    Singh, B. P.; Singh, Meena; Roy, Sanjay Kumar

    2010-11-01

    The necessity of modeling lies in the nature of technology and its advancement. The modeling minimizes time and cost of the process involved. The mathematical model provides an insight into the behavior of the physical system that reduces the problem to its essential characteristics. The floating admittance matrix (FAM) approach is an elegant method of mathematical modeling of electronic devices and circuits.

  13. Animation Based Learning of Electronic Devices

    ERIC Educational Resources Information Center

    Gero, Aharon; Zoabi, Wishah; Sabag, Nissim

    2014-01-01

    Two-year college teachers face great difficulty when they teach the principle of operation of the bipolar junction transistor--a subject which forms the basis for electronics studies. The difficulty arises from both the complexity of the device and by the lack of adequate scientific background among the students. We, therefore, developed a unique…

  14. New materials for electronic and solar devices

    SciTech Connect

    Not Available

    1990-12-21

    The partial contents are: New materials for electronic and solar devices; Applications of the photovoltaic systems; Technological steps in the solar cell production; Examples of the cell processing technology; Economic aspects of the PV panels production; Application of PV systems; Leading PV research centers and companies.

  15. The Miniguide: A New Electronic Travel Device.

    ERIC Educational Resources Information Center

    Hill, Jeremy; Black, John

    2003-01-01

    This article describes the Miniguide, a new electronic travel device that assists people in moving about in a range of environments. The Miniguide is held in the palm and is used to scan left to right when walking. It provides vibratory feedback to the hand when it detects an obstacle. (Contains 5 references.) (CR)

  16. Electronic Devices and Systems. Energy Technology Series.

    ERIC Educational Resources Information Center

    Technical Education Research Centre-Southwest, Waco, TX.

    This course in electronic devices and systems is one of 16 courses in the Energy Technology Series developed for an Energy Conservation-and-Use Technology curriculum. Intended for use in two-year postsecondary technical institutions to prepare technicians for employment, the courses are also useful in industry for updating employees in…

  17. General Electronics Technician: Semiconductor Devices and Circuits.

    ERIC Educational Resources Information Center

    Hilley, Robert

    These instructional materials include a teacher's guide designed to assist instructors in organizing and presenting an introductory course in general electronics focusing on semiconductor devices and circuits and a student guide. The materials are based on the curriculum-alignment concept of first stating the objectives, developing instructional…

  18. High performance flexible electronics for biomedical devices.

    PubMed

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  19. Theory of Electron Imaging in Small Devices

    SciTech Connect

    Heller, Eric J.

    2015-05-21

    The research in this program involved theoretical investigations of the transport of charge in graphene and small heterostructure devices. There is an important trend toward imaging electronic systems in real space, with the goal of understanding the specifics of individual samples rather than settling for ensemble and statistical descriptions. For example one of our goals has been the understanding of scanning probe microscopy (SPM) imaging of systems in which the motion of the carriers is restricted to two degrees of freedom, such as in grapheme and the two dimensional electron (and hole) gas (2DEGs and 2DHGs) in GaAs/AlGaAs heterostructures, or when the motion is restricted to one degree of freedom as in nanowires. SPM imaging uses the tip of a movable charged probe to alter the electrons locally, depleting or alternatively increasing the amount of charges in the electron gas just below the tip results in a change to the flow pattern of the charge. The focus of this research was on understanding how the tunable tip affects functional aspects of the device that can be used to understand electronic and transport properties. For instance, scanning over the device while measuring the conductance results in conductance maps, an imaging of the charge transport. This imaging is often semi-direct and requires theory and interpretation to extract all that can be deduced about the underlying physical quantities.

  20. Stretchable inorganic nanomembrane electronics for healthcare devices

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeong; Son, Donghee; Kim, Jaemin

    2015-05-01

    Flexible or stretchable electronic devices for healthcare technologies have attracted much attention in terms of usefulness to assist doctors in their operating rooms and to monitor patients' physical conditions for a long period of time. Each device to monitor the patients' physiological signals real-time, such as strain, pressure, temperature, and humidity, etc. has been reported recently. However, their limitations are found in acquisition of various physiological signals simultaneously because all the functions are not assembled in one skin-like electronic system. Here, we describe a skin-like, multi-functional healthcare system, which includes single crystalline silicon nanomembrane based sensors, nanoparticle-integrated non-volatile memory modules, electro-resistive thermal actuators, and drug delivery. Smart prosthetics coupled with therapeutic electronic system would provide new approaches to personalized healthcare.

  1. Nanocoaxes for Optical and Electronic Devices

    PubMed Central

    Rizal, Binod; Merlo, Juan M.; Burns, Michael J.; Chiles, Thomas C.; Naughton, Michael J.

    2014-01-01

    The evolution of micro/nanoelectronics technology, including the shrinking of devices and integrated circuit components, has included the miniaturization of linear and coaxial structures to micro/nanoscale dimensions. This reduction in the size of coaxial structures may offer advantages to existing technologies and benefit the exploration and development of new technologies. The reduction in the size of coaxial structures has been realized with various permutations between metals, semiconductors and dielectrics for the core, shield, and annulus. This review will focus on fabrication schemes of arrays of metal – nonmetal – metal nanocoax structures using non-template and template methods, followed by possible applications. The performance and scientific advantages associated with nanocoax-based optical devices including waveguides, negative refractive index materials, light emitting diodes, and photovoltaics are presented. In addition, benefits and challenges that accrue from the application of novel nanocoax structures in energy storage, electronic and sensing devices are summarized. PMID:25279400

  2. Electron cooling device without bending magnets

    NASA Astrophysics Data System (ADS)

    Sharapa, A. N.; Shemyakin, A. V.

    1993-11-01

    The scheme of an axisymmetric electron cooling device without bending magnets is proposed. Solutions for the most important elements, i.e., a gun and a recuperator, are considered. The main characteristics of the recuperator of the Faraday cup type having a reflector and a gun with a ring emitter are explored. In the gun, the beam is formed, the diameter of which is 40 mm and the dimension of a disturbance region is several millimeters.

  3. Secondary electron current loss in electron cooling devices

    NASA Astrophysics Data System (ADS)

    Sharapa, A. N.; Shemyakin, A. V.

    1994-12-01

    The efficiency of secondary electron capture in a recuperator with a longitudinal magnetic field is evaluated. To characterize this efficiency, the value of the collector secondary emission coefficient is introduced, for the calculation of which a simple formula is proposed. The effects determining the difference between the current losses in straight systems and devices with bending magnets are analyzed. It is experimentally shown that there is no unambiguous relation between the efficiency of the secondary electron capture by the collector and the current loss. The mechanism which determines the current loss in straight systems is suggested.

  4. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

    1998-08-25

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

  5. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

    1998-01-01

    A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

  6. Use of electronic portal imaging devices for electron treatment verification.

    PubMed

    Kairn, T; Aland, T; Crowe, S B; Trapp, J V

    2016-03-01

    This study aims to help broaden the use of electronic portal imaging devices (EPIDs) for pre-treatment patient positioning verification, from photon-beam radiotherapy to photon- and electron-beam radiotherapy, by proposing and testing a method for acquiring clinically-useful EPID images of patient anatomy using electron beams, with a view to enabling and encouraging further research in this area. EPID images used in this study were acquired using all available beams from a linac configured to deliver electron beams with nominal energies of 6, 9, 12, 16 and 20 MeV, as well as photon beams with nominal energies of 6 and 10 MV. A widely-available heterogeneous, approximately-humanoid, thorax phantom was used, to provide an indication of the contrast and noise produced when imaging different types of tissue with comparatively realistic thicknesses. The acquired images were automatically calibrated, corrected for the effects of variations in the sensitivity of individual photodiodes, using a flood field image. For electron beam imaging, flood field EPID calibration images were acquired with and without the placement of blocks of water-equivalent plastic (with thicknesses approximately equal to the practical range of electrons in the plastic) placed upstream of the EPID, to filter out the primary electron beam, leaving only the bremsstrahlung photon signal. While the electron beam images acquired using a standard (unfiltered) flood field calibration were observed to be noisy and difficult to interpret, the electron beam images acquired using the filtered flood field calibration showed tissues and bony anatomy with levels of contrast and noise that were similar to the contrast and noise levels seen in the clinically acceptable photon beam EPID images. The best electron beam imaging results (highest contrast, signal-to-noise and contrast-to-noise ratios) were achieved when the images were acquired using the higher energy electron beams (16 and 20 MeV) when the EPID was

  7. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  8. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  9. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  10. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  11. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 7 2011-10-01 2011-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  12. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  13. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  14. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  15. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  16. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  17. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  18. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  19. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  20. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 7 2013-10-01 2013-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  1. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  2. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  3. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 7 2014-10-01 2014-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  4. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  5. 14 CFR 125.204 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 125.204... Equipment Requirements § 125.204 Portable electronic devices. (a) Except as provided in paragraph (b) of... operation of, any portable electronic device on any U.S.-registered civil aircraft operating under this...

  6. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  7. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  8. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  9. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  10. 46 CFR 130.320 - Electronic position-fixing device.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electronic position-fixing device. 130.320 Section 130... CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Navigational Equipment § 130.320 Electronic position-fixing device. Each vessel must be equipped with an electronic position-fixing device satisfactory...

  11. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  12. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 7 2012-10-01 2012-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  13. 14 CFR 121.306 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Portable electronic devices. 121.306... Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate... electronic device on any U.S.-registered civil aircraft operating under this part. (b) Paragraph (a) of...

  14. 14 CFR 135.144 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Portable electronic devices. 135.144... Equipment § 135.144 Portable electronic devices. (a) Except as provided in paragraph (b) of this section, no... portable electronic device on any of the following U.S.-registered civil aircraft operating under this...

  15. 46 CFR 121.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electronic position fixing devices. 121.410 Section 121... AND MISCELLANEOUS SYSTEMS AND EQUIPMENT Navigation Equipment § 121.410 Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device,...

  16. 77 FR 38829 - Certain Electronic Imaging Devices; Institution of Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-29

    ... COMMISSION Certain Electronic Imaging Devices; Institution of Investigation AGENCY: U.S. International Trade... importation, and the sale within the United States after importation of certain electronic imaging devices by... electronic imaging devices that infringe one or more of claims 1-5, 7, 8, 10, 22, 24, 26, 28, 31, 34-43,...

  17. 46 CFR 184.410 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Electronic position fixing devices. 184.410 Section 184... Electronic position fixing devices. A vessel on an oceans route must be equipped with an electronic position fixing device, capable of providing accurate fixes for the area in which the vessel operates, to...

  18. Oxide bipolar electronics: materials, devices and circuits

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius; Klüpfel, Fabian; Karsthof, Robert; Schlupp, Peter; Schein, Friedrich-Leonhard; Splith, Daniel; Yang, Chang; Bitter, Sofie; von Wenckstern, Holger

    2016-06-01

    We present the history of, and the latest progress in, the field of bipolar oxide thin film devices. As such we consider primarily pn-junctions in which at least one of the materials is a metal oxide semiconductor. A wide range of n-type and p-type oxides has been explored for the formation of such bipolar diodes. Since most oxide semiconductors are unipolar, challenges and opportunities exist with regard to the formation of heterojunction diodes and band lineups. Recently, various approaches have led to devices with high rectification, namely p-type ZnCo2O4 and NiO on n-type ZnO and amorphous zinc-tin-oxide. Subsequent bipolar devices and applications such as photodetectors, solar cells, junction field-effect transistors and integrated circuits like inverters and ring oscillators are discussed. The tremendous progress shows that bipolar oxide electronics has evolved from the exploration of various materials and heterostructures to the demonstration of functioning integrated circuits. Therefore a viable, facile and high performance technology is ready for further exploitation and performance optimization.

  19. Instrumentation for Molecular Electronics Device Research

    NASA Astrophysics Data System (ADS)

    Kibel, Ashley Ann

    This dissertation describes work on three projects concerning the design and implementation of instrumentation used to study potential organic electronic devices. The first section describes the conducting atomic force microscope (CAFM) in the study of the mechanical and electronic interactions between DNA bases and nucleosides. Previous STM data suggested that an STM tip could recognize single base pairs through an electronic interaction after a functionalized tip made contact with a self assembled monolayer then was retracted. The conducting AFM was employed in order to understand the mechanical interactions of such a system and how they were affecting electrical responses. The results from the conducting AFM showed that the scanning probe system was measuring multiple base-pair interactions, and thus did not have single base resolution. Further, results showed that the conductance between a single base-nucleoside pair is below the detection limit of a potential commercial sequencing device. The second section describes the modifications of a scanning probe microscope in order to study the conductance of single organic molecules under illumination. Modifications to the scanning probe microscope are described as are the control and data analysis software for an experiment testing the single molecule conductance of an organic molecule under illumination. This instrument was then tested using a novel charge-separation molecule, which is being considered for its potential photovoltaic properties. The experiments showed that the instrumentation is capable of detecting differences in conductance upon laser illumination of the molecule on a transparent conductive surface. The third section describes measurements using the illuminated CAFM, as well as the design and construction of an illuminated mercury drop electrode apparatus. Both instruments were tested by attempting to observe photovoltaic behavior in a novel self-organized film of the charge-separation molecules

  20. The Jordy Electronic Magnification Device: Opinions, Observations, and Commentary

    ERIC Educational Resources Information Center

    Francis, Barry

    2005-01-01

    The Jordy electronic magnification device is one of a small number of electronic headborne devices designed to provide people with low vision the capability to perform near-range, intermediate-range, and distance viewing tasks. This report seeks to define the benefits of using the Jordy as a low vision device by people who are legally blind. The…

  1. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  2. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  3. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  4. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  5. 21 CFR 25.34 - Devices and electronic products.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Devices and electronic products. 25.34 Section 25... ENVIRONMENTAL IMPACT CONSIDERATIONS Categorical Exclusions § 25.34 Devices and electronic products. The classes... substitutes. (c) Issuance, amendment, or repeal of a standard for a class II medical device or an...

  6. Letter of intent: a muon to electron conversion experiment at Fermilab

    SciTech Connect

    Carey, R.M.; Lynch, K.R.; Miller, J.P.; Roberts, B.L.; Marciano, W.J.; Semertzidis, Y.; Yamin, P.; Kolomensky, Yu.G.; Ankenbrandt, C.M.; Bernstein, R.H.; Bogert, D.; /Fermilab /Idaho State U. /Illinois U., Urbana /Moscow, INR /Massachusetts U., Amherst /MUONS Inc., Batavia /Syracuse U. /Virginia U.

    2007-09-01

    We are writing this letter to express our interest in pursuing an experiment at Fermilab to search for neutrinoless conversion of muons into electrons in the field of a nucleus, which is a lepton flavor-violating (LFV) reaction. The sensitivity goal of this experiment represents an improvement of more than a factor of 10,000 over existing limits. It would provide the most sensitive test of LFV, a unique and essential window on new physics unavailable at the high energy frontier. We present a conceptual scheme that would exploit the existing Fermilab Accumulator and Debuncher rings to generate the required characteristics of the primary proton beam. The proposal requires only modest modifications to the accelerator complex beyond those already planned for the NOvA experiment, with which this experiment would be fully compatible; however, it could also benefit significantly from possible upgrades such as the 'Project X' linac. We include the conceptual design of the muon beam and the experimental apparatus, which use the previously proposed MECO experiment as a starting point.

  7. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  8. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  9. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  10. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  11. 14 CFR 91.21 - Portable electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Portable electronic devices. 91.21 Section... electronic devices. (a) Except as provided in paragraph (b) of this section, no person may operate, nor may any operator or pilot in command of an aircraft allow the operation of, any portable electronic...

  12. Letters, We Get Letters.

    ERIC Educational Resources Information Center

    Linton, Gretchen

    1997-01-01

    To aid teachers and students in their quest for information, an education specialist at an aquarium offers tips for organizing field trips, discusses home pages and search engines on the Internet, and gives detailed instructions for writing letters to institutions for information. Suggestions include writing joint letters if many students have the…

  13. Electrical and electronic devices and components: A compilation

    NASA Technical Reports Server (NTRS)

    1975-01-01

    Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

  14. What people know about electronic devices: A descriptive study

    NASA Astrophysics Data System (ADS)

    Kieras, D. E.

    1982-10-01

    Informal descriptive results on the nature of people's natural knowledge of electronic devices are presented. Expert and nonexpert subjects were given an electronic device to examine and describe orally. The devices ranged from familiar everyday devices, to those familiar only to the expert, to unusual devices unfamiliar even to an expert. College students were asked to describe everyday devices from memory. The results suggest that device knowledge consists of the major categories of what the device is for, how it is used, its structure in terms of subdevices, its physical layout, how it works, and its behavior. A preliminary theoretical framework for device knowledge is that it consists of a hierarchy of schemas, corresponding to a hierarchial decomposition of the device into subdevices, with each level containing the major categories of information.

  15. Crosslinked polymeric dielectric materials and electronic devices incorporating same

    NASA Technical Reports Server (NTRS)

    Marks, Tobin J. (Inventor); Facchetti, Antonio (Inventor); Wang, Zhiming (Inventor); Choi, Hyuk-Jin (Inventor); Suh, legal representative, Nae-Jeong (Inventor)

    2012-01-01

    Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.

  16. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2006-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  17. Graded junction termination extensions for electronic devices

    NASA Technical Reports Server (NTRS)

    Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

    2007-01-01

    A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

  18. Ion age transport: developing devices beyond electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  19. Electron beam directed energy device and methods of using same

    DOEpatents

    Retsky, Michael W.

    2007-10-16

    A method and apparatus is disclosed for an electron beam directed energy device. The device consists of an electron gun with one or more electron beams. The device includes one or more accelerating plates with holes aligned for beam passage. The plates may be flat or preferably shaped to direct each electron beam to exit the electron gun at a predetermined orientation. In one preferred application, the device is located in outer space with individual beams that are directed to focus at a distant target to be used to impact and destroy missiles. The aimings of the separate beams are designed to overcome Coulomb repulsion. A method is also presented for directing the beams to a target considering the variable terrestrial magnetic field. In another preferred application, the electron beam is directed into the ground to produce a subsurface x-ray source to locate and/or destroy buried or otherwise hidden objects including explosive devices.

  20. Ultra-high-speed optical and electronic distributed devices

    SciTech Connect

    Hietala, V.M.; Plut, T.A.; Kravitz, S.H.; Vawter, G.A.; Wendt, J.R.; Armendariz, M.G.

    1995-08-01

    This report summarizes work on the development of ultra-high-speed semiconductor optical and electronic devices. High-speed operation is achieved by velocity matching the input stimulus to the output signal along the device`s length. Electronic devices such as field-effect transistors (FET`s), should experience significant speed increases by velocity matching the electrical input and output signals along the device. Likewise, optical devices, which are typically large, can obtain significant bandwidths by velocity matching the light being generated, detected or modulated with the electrical signal on the device`s electrodes. The devices discussed in this report utilize truly distributed electrical design based on slow-wave propagation to achieve velocity matching.

  1. Questionable methods of cancer management: electronic devices.

    PubMed

    1994-01-01

    After careful study of the literature and other information available to it, the American Cancer Society has found no evidence that treatment with the devices mentioned in this review results in objective benefit in the treatment of cancer in human beings. Lacking such evidence, the American Cancer Society strongly urges individuals with cancer not to seek treatment with such devices. PMID:8124604

  2. Eliminating unwanted electrons in EBIS devices.

    PubMed

    Hershcovitch, Ady I

    2016-02-01

    In electron beam ion sources, step-wise ionization to high charge states is accomplished by magnetically confined electron beam. Electron space charge and high voltage electrodes confine the ions. The relativistic heavy ion collider (RHIC) ion source Debye length meets requirements for instabilities with free source of energy to grow. Electrons stripped from ions provide energy for a variety of microinstabilities to grow. Possible solution is to remove these electrons from the trap to a drift tube biased to higher voltage than the other tubes between the gate and the collector. If needed, a split drift tube for bleeding these electrons to ground is added. PMID:26931979

  3. Eliminating unwanted electrons in EBIS devices

    NASA Astrophysics Data System (ADS)

    Hershcovitch, Ady I.

    2016-02-01

    In electron beam ion sources, step-wise ionization to high charge states is accomplished by magnetically confined electron beam. Electron space charge and high voltage electrodes confine the ions. The relativistic heavy ion collider (RHIC) ion source Debye length meets requirements for instabilities with free source of energy to grow. Electrons stripped from ions provide energy for a variety of microinstabilities to grow. Possible solution is to remove these electrons from the trap to a drift tube biased to higher voltage than the other tubes between the gate and the collector. If needed, a split drift tube for bleeding these electrons to ground is added.

  4. The Electronic "Scarlet Letter": Criminal Backgrounding and a Perpetual Spoiled Identity

    ERIC Educational Resources Information Center

    Murphy, Daniel S.; Fuleihan, Brian; Richards, Stephen C.; Jones, Richard S.

    2011-01-01

    Crimes are multifaceted events that are not adequately explained with basic descriptors, yet a considerable amount of significance is afforded to relatively few simplistic labels that make up the contemporary "scarlet letter." Today's criminal records create a lifetime of stigmatization for a person. These public records employ a limited range of…

  5. Response to letter "Electron correlation and relativity of the 5f electrons in the Usbnd Zr alloy system"

    NASA Astrophysics Data System (ADS)

    Xie, Wei; Marianetti, Chris A.; Morgan, Dane

    2016-08-01

    In the Letter [Söderlind et al., J. Nucl. Mater. 444, 356 (2014)], Söderlind et al. state their interpretation that 1) we view electron correlation to be strong and including spin-orbit coupling (SOC) to be necessary for U metal and Usbnd Zr alloy in our article [Xiong et al., J. Nucl. Mater. 443, 331 (2013)]. Further, they argue that 2) density functional theory (DFT) without adding the Hubbard U potential, especially when solved using all electron methods, already models U and Usbnd Zr accurately, and 3) adding the Hubbard U potential to DFT in DFT + U models U and Usbnd Zr worse than DFT according to volume, bulk modulus, and magnetic moments predicted from their calculations of the γU phase of elemental U metal. With respect to Söderlind et al.'s interpretation 1), we clarify that our opinions are that U and Usbnd Zr are not strongly, but weakly to moderately correlated and that including SOC is beneficial but not necessary for modeling most ground state properties of U and Usbnd Zr. With respect to Söderlind et al.'s argument 2) we demonstrate that previously neglected and very recent experimental data suggest that DFT in Söderlind's full-potential linear muffin-tin orbital calculations [Söderlind, Phys. Rev. B 66, 085113 (2002)] in fact models the bulk modulus and elastic constants of αU with errors considerably larger than other related elements, e.g., most transition metals. With respect to Söderlind et al.'s argument 3) we argue that they have inappropriately focused on just one phase (the BCC γU phase of U metal), neglecting the other phases which represent the majority of our evidence, and made overgeneralizations based on results at only one Ueff value of 2 eV. We therefore maintain our original conclusion that the accuracy of DFT for modeling U and Usbnd Zr has room for improvement and DFT + U can be of value for this purpose on at least some ground state properties.

  6. Ion age transport: developing devices beyond electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2014-03-01

    There is more to current devices than conventional electronics. Increasingly research into the controlled movement of ions and molecules is enabling a range of new technologies. For example, as Weihua Guan, Sylvia Xin Li and Mark Reed at Yale University explain, 'It offers a unique opportunity to integrate wet ionics with dry electronics seamlessly'. In this issue they provide an overview of voltage-gated ion and molecule transport in engineered nanochannels. They cover the theory governing these systems and fabrication techniques, as well as applications, including biological and chemical analysis, and energy conversion [1]. Studying the movement of particles in nanochannels is not new. The transport of materials in rock pores led Klinkenberg to describe an analogy between diffusion and electrical conductivity in porous rocks back in 1951 [2]. And already in 1940, Harold Abramson and Manuel Gorin noted that 'When an electric current is applied across the living human skin, the skin may be considered to act like a system of pores through which transfer of substances like ragweed pollen extract may be achieved both by electrophoretic and by diffusion phenomena' [3]. Transport in living systems through pore structures on a much smaller scale has attracted a great deal of research in recent years as well. The selective transport of ions and small organic molecules across the cell membrane facilitates a number of functions including communication between cells, nerve conduction and signal transmission. Understanding these processes may benefit a wide range of potential applications such as selective separation, biochemical sensing, and controlled release and drug delivery processes. In Germany researchers have successfully demonstrated controlled ionic transport through nanopores functionalized with amine-terminated polymer brushes [4]. The polymer nanobrushes swell and shrink in response to changes in temperature, thus opening and closing the nanopore passage to ionic

  7. Fractal electronic devices: simulation and implementation.

    PubMed

    Fairbanks, M S; McCarthy, D N; Scott, S A; Brown, S A; Taylor, R P

    2011-09-01

    Many natural structures have fractal geometries that exhibit useful functional properties. These properties, which exploit the recurrence of patterns at increasingly small scales, are often desirable in applications and, consequently, fractal geometry is increasingly employed in diverse technologies ranging from radio antennae to storm barriers. In this paper, we explore the application of fractal geometry to electrical devices. First, we lay the foundations for the implementation of fractal devices by considering diffusion-limited aggregation (DLA) of atomic clusters. Under appropriate growth conditions, atomic clusters of various elements form fractal patterns driven by DLA. We perform a fractal analysis of both simulated and physical devices to determine their spatial scaling properties and demonstrate their potential as fractal circuit elements. Finally, we simulate conduction through idealized and DLA fractal devices and show that their fractal scaling properties generate novel, nonlinear conduction properties in response to depletion by electrostatic gates. PMID:21841218

  8. Fractal electronic devices: simulation and implementation

    NASA Astrophysics Data System (ADS)

    Fairbanks, M. S.; McCarthy, D. N.; Scott, S. A.; Brown, S. A.; Taylor, R. P.

    2011-09-01

    Many natural structures have fractal geometries that exhibit useful functional properties. These properties, which exploit the recurrence of patterns at increasingly small scales, are often desirable in applications and, consequently, fractal geometry is increasingly employed in diverse technologies ranging from radio antennae to storm barriers. In this paper, we explore the application of fractal geometry to electrical devices. First, we lay the foundations for the implementation of fractal devices by considering diffusion-limited aggregation (DLA) of atomic clusters. Under appropriate growth conditions, atomic clusters of various elements form fractal patterns driven by DLA. We perform a fractal analysis of both simulated and physical devices to determine their spatial scaling properties and demonstrate their potential as fractal circuit elements. Finally, we simulate conduction through idealized and DLA fractal devices and show that their fractal scaling properties generate novel, nonlinear conduction properties in response to depletion by electrostatic gates.

  9. Single-molecule electronics: from chemical design to functional devices.

    PubMed

    Sun, Lanlan; Diaz-Fernandez, Yuri A; Gschneidtner, Tina A; Westerlund, Fredrik; Lara-Avila, Samuel; Moth-Poulsen, Kasper

    2014-11-01

    The use of single molecules in electronics represents the next limit of miniaturisation of electronic devices, which would enable us to continue the trend of aggressive downscaling of silicon-based electronic devices. More significantly, the fabrication, understanding and control of fully functional circuits at the single-molecule level could also open up the possibility of using molecules as devices with novel, not-foreseen functionalities beyond complementary metal-oxide semiconductor technology (CMOS). This review aims at highlighting the chemical design and synthesis of single molecule devices as well as their electrical and structural characterization, including a historical overview and the developments during the last 5 years. We discuss experimental techniques for fabrication of single-molecule junctions, the potential application of single-molecule junctions as molecular switches, and general physical phenomena in single-molecule electronic devices.

  10. Medical Devices; Ophthalmic Devices; Classification of the Oral Electronic Vision Aid. Final order.

    PubMed

    2015-09-22

    The Food and Drug Administration (FDA) is classifying the oral electronic vision aid into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the oral electronic vision aid's classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device.

  11. Electron Beam Emission Characteristics from Plasma Focus Devices

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Patran, A.; Wong, D.; Hassan, S. M.; Springham, S. V.; Tan, T. L.; Lee, P.; Lee, S.; Rawat, R. S.

    2006-01-01

    In this paper we observed the characteristics of the electron beam emission from our plasma focus machine filling neon, argon, helium and hydrogen. Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal and energy distribution of electron emission. And the preliminary results of deposited FeCo thin film using electron beam from our plasma focus device were presented.

  12. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  13. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  14. Thermal electron-tunneling devices as coolers and amplifiers.

    PubMed

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-19

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs' chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  15. Thermal electron-tunneling devices as coolers and amplifiers

    PubMed Central

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-01-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices. PMID:26893109

  16. Thermal electron-tunneling devices as coolers and amplifiers

    NASA Astrophysics Data System (ADS)

    Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

    2016-02-01

    Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

  17. Coulometry Experiments Using Simple Electronic Devices.

    ERIC Educational Resources Information Center

    Grimsrud, Eric; Amend, John

    1979-01-01

    Two experiments are presented which help to illustrate a modular approach to electrochemical instrument design, but which are readily understandable to students with a limited electronics background. The experiments are coulometric titration and controlled potential coulometry.

  18. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  19. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  20. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  1. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  2. 46 CFR 28.260 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Lines or With More Than 16 Individuals On Board, or for Fish Tender Vessels Engaged in the Aleutian Trade § 28.260 Electronic position fixing devices. Each vessel 79 feet (24 meters) or more in...

  3. Programmable synaptic devices for electronic neural nets

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Thakoor, A. P.

    1990-01-01

    The architecture, design, and operational characteristics of custom VLSI and thin film synaptic devices are described. The devices include CMOS-based synaptic chips containing 1024 reprogrammable synapses with a 6-bit dynamic range, and nonvolatile, write-once, binary synaptic arrays based on memory switching in hydrogenated amorphous silicon films. Their suitability for embodiment of fully parallel and analog neural hardware is discussed. Specifically, a neural network solution to an assignment problem of combinatorial global optimization, implemented in fully parallel hardware using the synaptic chips, is described. The network's ability to provide optimal and near optimal solutions over a time scale of few neuron time constants has been demonstrated and suggests a speedup improvement of several orders of magnitude over conventional search methods.

  4. Holmium hafnate: An emerging electronic device material

    SciTech Connect

    Pavunny, Shojan P. E-mail: rkatiyar@hpcf.upr.edu; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Katiyar, Ram S. E-mail: rkatiyar@hpcf.upr.edu; Scott, James F.

    2015-03-16

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  5. Holmium hafnate: An emerging electronic device material

    NASA Astrophysics Data System (ADS)

    Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

    2015-03-01

    We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

  6. Simulation of electron transport in quantum well devices

    NASA Technical Reports Server (NTRS)

    Miller, D. R.; Gullapalli, K. K.; Reddy, V. R.; Neikirk, D. P.

    1992-01-01

    Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

  7. Are Electronic Cardiac Devices Still Evolving?

    PubMed Central

    Mabo, P.

    2014-01-01

    Summary Objectives The goal of this paper is to review some important issues occurring during the past year in Implantable devices. Methods First cardiac implantable device was proposed to maintain an adequate heart rate, either because the heart’s natural pacemaker is not fast enough, or there is a block in the heart’s electrical conduction system. During the last forty years, pacemakers have evolved considerably and become programmable and allow to configure specific patient optimum pacing modes. Various technological aspects (electrodes, connectors, algorithms diagnosis, therapies, …) have been progressed and cardiac implants address several clinical applications: management of arrhythmias, cardioversion / defibrillation and cardiac resynchronization therapy. Results Observed progress was the miniaturization of device, increased longevity, coupled with efficient pacing functions, multisite pacing modes, leadless pacing and also a better recognition of supraventricular or ventricular tachycardia’s in order to deliver appropriate therapy. Subcutaneous implant, new modes of stimulation (leadless implant or ultrasound lead), quadripolar lead and new sensor or new algorithm for the hemodynamic management are introduced and briefly described. Each times, the main result occurring during the two past years are underlined and repositioned from the history, remaining limitations are also addressed. Conclusion Some important technological improvements were described. Nevertheless, news trends for the future are also considered in a specific session such as the remote follow-up of the patient or the treatment of heart failure by neuromodulation. PMID:25123732

  8. Inventory Control. Easily Made Electronic Device for Conductivity Experiments.

    ERIC Educational Resources Information Center

    Gadek, Frank J.

    1987-01-01

    Describes how to construct an electronic device to be used in conductivity experiments using a 35 millimeter film canister, nine volt battery replacement snaps, a 200-300 ohm resistor, and a light-emitting diode. Provides a diagram and photographs of the device. (TW)

  9. 75 FR 45696 - Pipeline Safety: Personal Electronic Device Related Distractions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-03

    ... Electronic Devices, 75 FR 9754, May 18, 2010; Limiting the Use of Wireless Communication Devices, 75 FR 16391... distractions caused by the use of PEDs. Such distractions may also hinder their prompt recognition and reaction... distractions caused by the use of PEDs. Such distractions may also hinder their prompt recognition and...

  10. Method for integrating microelectromechanical devices with electronic circuitry

    DOEpatents

    Barron, Carole C.; Fleming, James G.; Montague, Stephen

    1999-01-01

    A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

  11. Consolidated electron emission effects in an IEC device

    NASA Astrophysics Data System (ADS)

    Krupakar Murali, S.; Santarius, John F.; Kulcinski, Gerald L.

    2010-08-01

    Gridded inertial electrostatic confinement (IEC) devices are of interest to the research community for their multiple near-term applications. The number of applications of an IEC device increases with increasing fusion reaction rate. However, all attempts to improve the fusion reactivity of the IEC device have resulted in a linear or less than linear response with the power supply current. This work is geared toward determining the reasons for the observed response of the IEC device. Such an understanding would help formulate new ways to improve the efficiency of the device. Experiments were conducted with single loop grids built from different materials (Re and W25%Re) to study the electron emission from the cathode in an IEC device. A single loop grid produces a (~line) cylindrical fusion source and was used to study the electron emission from cathode. Electron emission from the cathode increases non-linearly due to the presence of multiple sources (secondary electron emission, field emission and photoemission), as a result of which the ion current increases in a less than linear fashion with the power supply current. The ion recirculation current equation has been updated to accommodate various electron contributions. Several techniques to mitigate the electron emission from the cathode are suggested in this paper.

  12. Printed Electronic Devices in Human Spaceflight

    NASA Technical Reports Server (NTRS)

    Bacon, John B.

    2004-01-01

    The space environment requires robust sensing, control, and automation, whether in support of human spaceflight or of robotic exploration. Spaceflight embodies the known extremes of temperature, radiation, shock, vibration, and static loads, and demands high reliability at the lowest possible mass. Because printed electronic circuits fulfill all these requirements, printed circuit technology and the exploration of space have been closely coupled throughout their short histories. In this presentation, we will explore the space (and space launch) environments as drivers of printed circuit design, a brief history of NASA's use of printed electronic circuits, and we will examine future requirements for such circuits in our continued exploration of space.

  13. Electronic 4-wheel drive control device

    NASA Technical Reports Server (NTRS)

    Hayato, S.; Takanori, S.; Shigeru, H.; Tatsunori, S.

    1984-01-01

    The internal rotation torque generated during operation of a 4-wheel drive vehicle is reduced using a control device whose clutch is attached to one part of the rear-wheel drive shaft. One torque sensor senses the drive torque associated with the rear wheel drive shaft. A second sensor senses the drive torque associated with the front wheel drive shaft. Revolution count sensors sense the revolutions of each drive shaft. By means of a microcomputer, the engagement of the clutch is changed to insure that the ratio of the torque sensors remains constant.

  14. Electron waves resonance properties in superdimensional microwave Cherenkov devices

    SciTech Connect

    Chernyavsky, I.A.; Pikunov, V.M.

    1995-11-01

    The electron waves resonance properties in the one-stage and two-stage microwave Cherenkov devices based on the superdimensional slow-wave structures are investigated by the linear theory methods near {pi}-cutoff of E{sub 01} waveguide mode. The variation of the generation frequencies and it`s starting currents, when diode voltage changes in a wide range of value, are investigated. concept of a longitudinal electron oscillations (LEO) is defined for a one-stage device. The dependencies of the generation frequency and starting current versus the drift tube length are investigated for the two-stage device in detail.

  15. Weak localization and electron-electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (˜T -0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.

  16. Future Opportunities for Advancing Glucose Test Device Electronics

    PubMed Central

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-01-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano “ink” composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, “ink,” and continuous processing development presents the opportunity for research collaboration with medical device designers. PMID:22027300

  17. Future opportunities for advancing glucose test device electronics.

    PubMed

    Young, Brian R; Young, Teresa L; Joyce, Margaret K; Kennedy, Spencer I; Atashbar, Massood Z

    2011-09-01

    Advancements in the field of printed electronics can be applied to the field of diabetes testing. A brief history and some new developments in printed electronics components applicable to personal test devices, including circuitry, batteries, transmission devices, displays, and sensors, are presented. Low-cost, thin, and lightweight materials containing printed circuits with energy storage or harvest capability and reactive/display centers, made using new printing/imaging technologies, are ideal for incorporation into personal-use medical devices such as glucose test meters. Semicontinuous rotogravure printing, which utilizes flexible substrates and polymeric, metallic, and/or nano "ink" composite materials to effect rapidly produced, lower-cost printed electronics, is showing promise. Continuing research advancing substrate, "ink," and continuous processing development presents the opportunity for research collaboration with medical device designers.

  18. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  19. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  20. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  1. 33 CFR 164.41 - Electronic position fixing devices.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Electronic position fixing devices. 164.41 Section 164.41 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) PORTS AND WATERWAYS SAFETY NAVIGATION SAFETY REGULATIONS § 164.41 Electronic...

  2. Incorporating Ethical Consumption into Electronic Device Acquisition: A Proposal

    ERIC Educational Resources Information Center

    Poggiali, Jennifer

    2016-01-01

    This essay proposes that librarians practice ethical consumption when purchasing electronic devices. Though librarians have long been engaged with environmentalism and social justice, few have suggested that such issues as e-waste and sweatshop labor should impact our decisions to acquire e-readers, tablets, and other electronics. This article…

  3. Graphene gate electrode for MOS structure-based electronic devices.

    PubMed

    Park, Jong Kyung; Song, Seung Min; Mun, Jeong Hun; Cho, Byung Jin

    2011-12-14

    We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the quantum mechanical tunneling current from the gate electrode. This concept is applied to nonvolatile Flash memory devices, whose performance is critically affected by the quality of the gate dielectric. Charge-trap flash (CTF) memory with a graphene gate electrode shows superior data retention and program/erase performance that current CTF devices cannot achieve. The findings of this study can lead to new applications of graphene, not only for Flash memory devices but also for other high-performance and mass-producible electronic devices based on MOS structure which is the mainstream of the electronic device industry.

  4. 77 FR 44671 - Certain Wireless Consumer Electronics Devices and Components Thereof; Notice of Receipt of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-30

    ... COMMISSION Certain Wireless Consumer Electronics Devices and Components Thereof; Notice of Receipt of... received a complaint entitled Certain Wireless Consumer Electronics Devices and Components Thereof, DN 2904... within the United States after importation of certain wireless consumer electronics devices...

  5. 77 FR 51572 - Certain Wireless Consumer Electronics Devices and Components Thereof; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-24

    ... COMMISSION Certain Wireless Consumer Electronics Devices and Components Thereof; Institution of Investigation... United States after importation of certain wireless consumer electronics devices and components thereof... importation of certain wireless consumer electronics devices and components thereof that infringe one or...

  6. 78 FR 38361 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-26

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof... States after importation of certain portable electronic ] communications devices, including mobile phones... importation of certain portable electronic communications devices, including mobile phones and...

  7. 77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-08

    ... COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... Trade Commission has received a complaint entitled Certain Electronic Devices, Including Mobile Phones... electronic devices, including mobile phones and tablet computers, and components thereof. The complaint...

  8. 76 FR 22918 - In the Matter of Certain Handheld Electronic Computing Devices, Related Software, and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-25

    ... COMMISSION In the Matter of Certain Handheld Electronic Computing Devices, Related Software, and Components... States after importation of certain handheld electronic computing devices, related software, and... importation of certain handheld electronic computing devices, related software, and components thereof...

  9. 78 FR 16865 - Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and Data...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-19

    ... America, LLC of Richardson, Texas (collectively, ``Samsung''). 76 FR 45860 (Aug. 1, 2011). The complaint... Commission, and on the issues of remedy, the public interest, and bonding. 77 FR 70464. The Commission... COMMISSION Certain Electronic Devices, Including Wireless Communication Devices, Portable Music and...

  10. Multiscale quantum mechanics/electromagnetics simulation for electronic devices.

    PubMed

    Yam, ChiYung; Meng, Lingyi; Chen, GuanHua; Chen, Quan; Wong, Ngai

    2011-08-28

    The continuous downsizing of modern electronic devices implies the increasing importance of quantum phenomena. As the feature sizes of transistors inch towards 10 nanometer, simulations including quantum effects and atomistic details are inevitable. Here we report a novel hybrid quantum mechanics and electromagnetics (QM/EM) method to model individual electronic components at the nanoscale. QM and EM models are solved in different regions of the system in a self-consistent manner. As a demonstration, we study a carbon nanotube based electronic device embedded in a silicon block. Good agreement is obtained between simulation by QM/EM method and full QM treatment of the entire system.

  11. Recent Power Quality Technology Employing Power Electronics Devices

    NASA Astrophysics Data System (ADS)

    Takasaki, Masahiro

    Power quality has become a common concern of customers and utilities in improving respective profits in the context of an open electricity market. Power electronics is the essential technology to control power quality in accordance with customer requirements and utility standards. This paper first summarizes power quality definitions and indices used in IEEE and IEC standards. It clarifies the problem to be solved and the role of power electronics devices. Then the overview of power quality control methods and equipments employing power electronics devices is explained. The control methodology discussed in this paper includes various schemes of future distribution and power supply system now under development.

  12. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  13. Aquatic toxicity of leachates generated from electronic devices.

    PubMed

    Dagan, Roi; Dubey, Brajesh; Bitton, Gabriel; Townsend, Timothy

    2007-08-01

    Heavy metal leaching of electronic waste has been documented in recent literature. Heavy metal aquatic toxicity in the toxicity characteristic (TC) leachates produced from 56 electronic devices were tested using the aquatic toxicity assays such as Ceriodaphnia dubia 48-hr acute toxicity assay, the Selenatastrum capricornutum chronic algal growth inhibition assay (test used only for circuit-board leachates), and the MetPLATE acute heavy metal toxicity tests. The electronic devices tested, include 9 circuit boards (printed wire boards), 2 videocassette recorders, 4 remote controls, 1 cathode ray tube, 15 cellular phones, 1 calculator, 5 smoke detectors and their PC board components, 3 printers, 4 laptop computers, and 7 personal computer central processing units (CPUs). The toxicity tests showed toxicity in 51 of the 56 Toxicity Characteristic Leaching Procedure leachates of electronic devices assayed.

  14. Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

    PubMed

    Bettinger, Christopher J

    2015-10-01

    Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted.

  15. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  16. Emerging electronic devices for THz sensing and imaging

    NASA Astrophysics Data System (ADS)

    Fay, P.; Xie, Y.; Zhao, Y.; Jiang, Z.; Rahman, S.; Xing, H.; Sensale-Rodriguez, B.; Liu, L.

    2014-09-01

    Continuing advances in scaling of conventional semiconductor devices are enabling mainstream electronics to operate in the millimeter-wave through THz regime. At the same time, however, novel devices and device concepts are also emerging to address the key challenges for systems in this frequency range, and may offer performance and functional advantages for future systems. In addition to new devices, advances in integration technology and novel system concepts also promise to provide substantial system-level performance and functionality enhancements. Several emerging devices and device concepts, as well as circuit-level concepts to take advantage of them, are discussed. Based on unconventional semiconductor device structures and operational principles, these devices offer the potential for significantly improved system sensitivity and frequency coverage. When combined in arrays, features such as polarimetric detection and frequency tunability for imaging can be achieved. As examples of emerging devices for millimeter-wave through THz sensing and imaging, heterostructure backward diodes in the InAs/AlSb/GaSb material system and GaN-based plasma-wave high electron mobility transistors (HEMTs) will be discussed. Based on interband tunneling, heterostructure backward diodes offer significantly increased sensitivity and extremely low noise for direct detection applications, and have been demonstrated with cutoff frequencies exceeding 8 THz. The plasma-wave HEMT is an emerging device concept that, by leveraging plasma-wave resonances in the two-dimensional electron gas within the channel of the HEMT, offers the prospect for both tunable narrowband detection as well as low-noise amplification at frequencies well into the THz. These emerging devices are both amenable to direct integration within compact planar radiating structures such as annular slot antennas for realization of polarimetric detection and frequency tuning for spectroscopy and imaging.

  17. dc-plasma-sprayed electronic-tube device

    DOEpatents

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  18. Perioperative Management of Multiple Noncardiac Implantable Electronic Devices.

    PubMed

    Ramos, Juan A; Brull, Sorin J

    2015-12-01

    The number of patients with noncardiac implantable electronic devices is increasing, and the absence of perioperative management standards, guidelines, practice parameters, or expert consensus statements presents clinical challenges. A 69-year-old woman presented for latissimus dorsi breast reconstruction. The patient had previously undergone implantation of a spinal cord stimulator, a gastric pacemaker, a sacral nerve stimulator, and an intrathecal morphine pump. After consultation with device manufacturers, the devices with patient programmability were switched off. Bipolar cautery was used intraoperatively. Postoperatively, all devices were interrogated to ensure appropriate functioning before home discharge. Perioperative goals include complete preoperative radiologic documentation of device component location, minimizing electromagnetic interference, and avoiding mechanical damage to implanted device components.

  19. Perioperative Management of Multiple Noncardiac Implantable Electronic Devices.

    PubMed

    Ramos, Juan A; Brull, Sorin J

    2015-12-01

    The number of patients with noncardiac implantable electronic devices is increasing, and the absence of perioperative management standards, guidelines, practice parameters, or expert consensus statements presents clinical challenges. A 69-year-old woman presented for latissimus dorsi breast reconstruction. The patient had previously undergone implantation of a spinal cord stimulator, a gastric pacemaker, a sacral nerve stimulator, and an intrathecal morphine pump. After consultation with device manufacturers, the devices with patient programmability were switched off. Bipolar cautery was used intraoperatively. Postoperatively, all devices were interrogated to ensure appropriate functioning before home discharge. Perioperative goals include complete preoperative radiologic documentation of device component location, minimizing electromagnetic interference, and avoiding mechanical damage to implanted device components. PMID:26588030

  20. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  1. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  2. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  3. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  4. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  5. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  6. 49 CFR 220.315 - Operational tests and inspections; further restrictions on use of electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... restrictions on use of electronic devices. 220.315 Section 220.315 Transportation Other Regulations Relating to... Electronic Devices § 220.315 Operational tests and inspections; further restrictions on use of electronic... calling the personal electronic device or the railroad-supplied electronic device used by a...

  7. Axial Electron Heat Loss From Mirror Devices Revisited

    SciTech Connect

    Ryutov, D

    2004-08-16

    An issue of the axial electron heat loss is of a significant importance for mirror-based fusion devices. This problem has been considered in a number of publications but it is still shrouded in misconceptions. In this paper we revisit it once again. We discuss the following issues: (1) Formation of the electron distribution function in the end tank at large expansion ratios; (2) The secondary emission from the end plates and the ways of suppressing it (if needed); (3) Ionization and charge exchange in the presence of neutrals in the end tanks; (4) Instabilities caused by the peculiar shape of the electron distribution function and their possible impact on the electron heat losses; (5) Electron heat losses in the pulsed mode of operation of mirror devices.

  8. Axial Electron Heat Loss from Mirror Devices Revisited

    SciTech Connect

    Ryutov, D.D.

    2005-01-15

    An issue of the axial electron heat loss is of a significant importance for mirror-based fusion devices. This problem has been considered in a number of publications but it is still shrouded in misconceptions. In this paper we revisit it once again. We discuss the following issues: 1) Formation of the electron distribution function in the end tank at large expansion ratios; 2) The secondary emission from the end plates and the ways of suppressing it (if needed); 3) Ionization and charge exchange in the presence of neutrals in the end tanks; 4) Instabilities caused by the peculiar shape of the electron distribution function and their possible impact on the electron heat losses; 5) Electron heat losses in the pulsed mode of operation of mirror devices.

  9. A Novel Device for Intravaginal Electronic Brachytherapy

    SciTech Connect

    Schneider, Frank Fuchs, Holger; Lorenz, Friedlieb; Steil, Volker; Ziglio, Francesco; Kraus-Tiefenbacher, Uta; Lohr, Frank; Wenz, Frederik

    2009-07-15

    Purpose: Postoperative intravaginal brachytherapy for endometrial carcinoma is usually performed with {sup 192}Ir high-dose rate (HDR) afterloading. A potential alternative is treatment with a broadband 50kV X-ray point source, the advantage being its low energy and the consequential steep dose gradient. The aim of this study was to create and evaluate a homogeneous cylindrical energy deposition around a newly designed vaginal applicator. Methods and Materials: To create constant isodose layers along the cylindrical plastic vaginal applicator, the source (INTRABEAM system) was moved in steps of 17-19.5 mm outward from the tip of the applicator. Irradiation for a predetermined time was performed at each position. The axial shift was established by a stepping mechanism that was mounted on a table support. The total dose/dose distribution was determined using film dosimetry (Gafchromic EBT) in a 'solid water' phantom. The films were evaluated with Mathematica 5.2 and OmniPro-I'mRT 1.6. The results (dose D0/D5/D10 in 0/5/10 mm tissue depth) were compared with an {sup 192}Ir HDR afterloading plan for multiple sampling points around the applicator. Results: Three different dose distributions with lengths of 3.9-7.3 cm were created. The irradiation time based on the delivery of 5/7 Gy to a 5 mm tissue depth was 19/26 min to 27/38 min. D0/D5/D10 was 150%/100%/67% for electronic brachytherapy and 140%/100%/74% for the afterloading technique. The deviation for repeated measurements in the phantom was <7%. Conclusions: It is possible to create a homogeneous cylindrical dose distribution, similar to {sup 192}Ir HDR afterloading, through the superimposition of multiple spherical dose distributions by stepping a kilovolt point source.

  10. Flexible Organic Electronics in Biology: Materials and Devices.

    PubMed

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-01

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area.

  11. Flexible Organic Electronics in Biology: Materials and Devices.

    PubMed

    Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

    2015-12-01

    At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. PMID:25393596

  12. Subretinal electronic chips allow blind patients to read letters and combine them to words

    PubMed Central

    Zrenner, Eberhart; Bartz-Schmidt, Karl Ulrich; Benav, Heval; Besch, Dorothea; Bruckmann, Anna; Gabel, Veit-Peter; Gekeler, Florian; Greppmaier, Udo; Harscher, Alex; Kibbel, Steffen; Koch, Johannes; Kusnyerik, Akos; Peters, Tobias; Stingl, Katarina; Sachs, Helmut; Stett, Alfred; Szurman, Peter; Wilhelm, Barbara; Wilke, Robert

    2011-01-01

    A light-sensitive, externally powered microchip was surgically implanted subretinally near the macular region of volunteers blind from hereditary retinal dystrophy. The implant contains an array of 1500 active microphotodiodes (‘chip’), each with its own amplifier and local stimulation electrode. At the implant's tip, another array of 16 wire-connected electrodes allows light-independent direct stimulation and testing of the neuron–electrode interface. Visual scenes are projected naturally through the eye's lens onto the chip under the transparent retina. The chip generates a corresponding pattern of 38 × 40 pixels, each releasing light-intensity-dependent electric stimulation pulses. Subsequently, three previously blind persons could locate bright objects on a dark table, two of whom could discern grating patterns. One of these patients was able to correctly describe and name objects like a fork or knife on a table, geometric patterns, different kinds of fruit and discern shades of grey with only 15 per cent contrast. Without a training period, the regained visual functions enabled him to localize and approach persons in a room freely and to read large letters as complete words after several years of blindness. These results demonstrate for the first time that subretinal micro-electrode arrays with 1500 photodiodes can create detailed meaningful visual perception in previously blind individuals. PMID:21047851

  13. Subretinal electronic chips allow blind patients to read letters and combine them to words.

    PubMed

    Zrenner, Eberhart; Bartz-Schmidt, Karl Ulrich; Benav, Heval; Besch, Dorothea; Bruckmann, Anna; Gabel, Veit-Peter; Gekeler, Florian; Greppmaier, Udo; Harscher, Alex; Kibbel, Steffen; Koch, Johannes; Kusnyerik, Akos; Peters, Tobias; Stingl, Katarina; Sachs, Helmut; Stett, Alfred; Szurman, Peter; Wilhelm, Barbara; Wilke, Robert

    2011-05-22

    A light-sensitive, externally powered microchip was surgically implanted subretinally near the macular region of volunteers blind from hereditary retinal dystrophy. The implant contains an array of 1500 active microphotodiodes ('chip'), each with its own amplifier and local stimulation electrode. At the implant's tip, another array of 16 wire-connected electrodes allows light-independent direct stimulation and testing of the neuron-electrode interface. Visual scenes are projected naturally through the eye's lens onto the chip under the transparent retina. The chip generates a corresponding pattern of 38 × 40 pixels, each releasing light-intensity-dependent electric stimulation pulses. Subsequently, three previously blind persons could locate bright objects on a dark table, two of whom could discern grating patterns. One of these patients was able to correctly describe and name objects like a fork or knife on a table, geometric patterns, different kinds of fruit and discern shades of grey with only 15 per cent contrast. Without a training period, the regained visual functions enabled him to localize and approach persons in a room freely and to read large letters as complete words after several years of blindness. These results demonstrate for the first time that subretinal micro-electrode arrays with 1500 photodiodes can create detailed meaningful visual perception in previously blind individuals.

  14. Inverted organic photovoltaic device with a new electron transport layer

    PubMed Central

    2014-01-01

    We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air. PMID:24674457

  15. Electronic firing systems and methods for firing a device

    SciTech Connect

    Frickey, Steven J.; Svoboda, John M.

    2012-04-24

    An electronic firing system comprising a control system, a charging system, an electrical energy storage device, a shock tube firing circuit, a shock tube connector, a blasting cap firing circuit, and a blasting cap connector. The control system controls the charging system, which charges the electrical energy storage device. The control system also controls the shock tube firing circuit and the blasting cap firing circuit. When desired, the control system signals the shock tube firing circuit or blasting cap firing circuit to electrically connect the electrical energy storage device to the shock tube connector or the blasting cap connector respectively.

  16. Study on the frequency characteristics of nanogap electron devices

    SciTech Connect

    Xu, Ji; Wang, Qilong E-mail: bell@seu.edu.cn; Qi, Zhiyang; Zhai, Yusheng; Zhang, Xiaobing E-mail: bell@seu.edu.cn

    2015-05-28

    Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.

  17. Micro- and Nanostructured Materials for Active Devices and Molecular Electronics

    SciTech Connect

    Martin, Peter M.; Graff, Gordon L.; Gross, Mark E.; Burrows, Paul E.; Bennett, Wendy D.; Mast, Eric S.; Hall, Michael G.; Bonham, Charles C.; Zumhoff, Mac R.; Williford, Rick E.

    2003-10-01

    Traditional single layer barrier coatings are not adequate in preventing degradation of the performance of organic molecular electronic and other active devices. Most advanced devices used in display technology now consist of micro and nanostructured small molecule, polymer and inorganic coatings with thin high reactive group 1A metals. This includes organic electronics such as organic light emitting devices (OLED). The lifetimes of these devices rapidly degrades when they are exposed to atmospheric oxygen and water vapor. Thin film photovoltaics and batteries are also susceptible to degradation by moisture and oxygen. Using in-line coating techniques we apply a composite nanostructured inorganic/polymer thin film barrier that restricts moisture and oxygen permeation to undetectable levels using conventional permeation test equipment. We describe permeation mechanisms for this encapsulation coating and flat panel display and other device applications. Permeation through the multilayer barrier coating is defect and pore limited and can be described by Knudsen diffusion involving a long and tortuous path. Device lifetime is also enhanced by the long lag times required to reach the steady state flux regime. Permeation rates in the range of 10-6 cc,g/m2/d have been achieved and OLED device lifetimes. The structure is robust, yet flexible. The resulting device performance and lifetimes will also be described. The barrier film can be capped with a thin film of transparent conductive oxide yielding an engineered nanostructured device for next generation, rugged, lightweight or flexible displays. This enables, for the first time, thin film encapsulation of emissive organic displays.

  18. Deformable devices with integrated functional nanomaterials for wearable electronics

    NASA Astrophysics Data System (ADS)

    Kim, Jaemin; Lee, Jongsu; Son, Donghee; Choi, Moon Kee; Kim, Dae-Hyeong

    2016-03-01

    As the market and related industry for wearable electronics dramatically expands, there are continuous and strong demands for flexible and stretchable devices to be seamlessly integrated with soft and curvilinear human skin or clothes. However, the mechanical mismatch between the rigid conventional electronics and the soft human body causes many problems. Therefore, various prospective nanomaterials that possess a much lower flexural rigidity than their bulk counterparts have rapidly established themselves as promising electronic materials replacing rigid silicon and/or compound semiconductors in next-generation wearable devices. Many hybrid structures of multiple nanomaterials have been also developed to pursue both high performance and multifunctionality. Here, we provide an overview of state-of-the-art wearable devices based on one- or two-dimensional nanomaterials (e.g., carbon nanotubes, graphene, single-crystal silicon and oxide nanomembranes, organic nanomaterials and their hybrids) in combination with zero-dimensional functional nanomaterials (e.g., metal/oxide nanoparticles and quantum dots). Starting from an introduction of materials strategies, we describe device designs and the roles of individual ones in integrated systems. Detailed application examples of wearable sensors/actuators, memories, energy devices, and displays are also presented.

  19. 77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-08

    ... COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... devices, including mobile phones and tablet computers, and components thereof by reason of infringement of... certain electronics devices, including mobile phones and tablet computers, and components thereof...

  20. A Web Service and Interface for Remote Electronic Device Characterization

    ERIC Educational Resources Information Center

    Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

    2011-01-01

    A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

  1. Travel in Adverse Weather Using Electronic Mobility Guidance Devices

    ERIC Educational Resources Information Center

    Farmer, Leicester W.

    1975-01-01

    After a discussion of the required characteristics of an ideal aid for blind individuals traveling in adverse weather, four electronic mobility guidance devices- the Mowat Sonar Sensor, the Russell E Model Pathsounder, the Bionic C-5 Laser Cane, and the Mark II Binaural Sensory Aid-are described in detail. (Author/SB)

  2. Front and backside processed thin film electronic devices

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2010-10-12

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  3. Electrodes mitigating effects of defects in organic electronic devices

    DOEpatents

    Heller, Christian Maria Anton

    2008-05-06

    A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

  4. Electronic simulation of a multiterminal quantum Hall effect device

    NASA Astrophysics Data System (ADS)

    Sosso, A.; Capra, P. P.

    1999-04-01

    A circuit with only resistors and unity gain amplifiers can be proven to be equivalent to the Ricketts and Kemeny electrical model of multiterminal quantum Hall effect (QHE) devices. By means of the new equivalent circuit, commercial software for electronic circuit analysis can be used to study a QHE measurement system. Moreover, it can be easily implemented, and we were able to build a circuit that simulates the electrical behavior of a QHE device. Particular care was taken in the design to reduce the effect of parasitic capacitances, which act as loads connected to the device terminals. Bootstrap buffers have been adopted to significantly reduce the capacitance of input stage. The small residual loading effect can be calculated and eliminated, allowing simulation of a QHE device with good accuracy.

  5. THz devices based on 2D electron systems

    NASA Astrophysics Data System (ADS)

    Xing, Huili Grace; Yan, Rusen; Song, Bo; Encomendero, Jimy; Jena, Debdeep

    2015-05-01

    In two-dimensional electron systems with mobility on the order of 1,000 - 10,000 cm2/Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 - 3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

  6. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    PubMed Central

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  7. Semi-shunt field emission in electronic devices

    SciTech Connect

    Karpov, V. G.; Shvydka, Diana

    2014-08-04

    We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.

  8. Evaluation of Miscellaneous and Electronic Device Energy Use in Hospitals

    SciTech Connect

    Black, Douglas R.; Lanzisera, Steven M.; Lai, Judy; Brown, Richard E.; Singer, Brett C.

    2012-09-01

    Miscellaneous and electronic loads (MELs) consume about one-thirdof the primary energy used in US buildings, and their energy use is increasing faster than other end-uses. In healthcare facilities, 30percent of the annual electricity was used by MELs in 2008. This paper presents methods and challenges for estimating medical MELs energy consumption along with estimates of energy use in a hospital by combining device-level metered data with inventories and usage information. An important finding is that common, small devices consume large amounts of energy in aggregate and should not be ignored when trying to address hospital energy use.

  9. LETTER: Electron Bernstein wave assisted plasma current start-up in MAST

    NASA Astrophysics Data System (ADS)

    Shevchenko, V. F.; O'Brien, M. R.; Taylor, D.; Saveliev, A. N.; MAST Team

    2010-02-01

    Electron Bernstein wave (EBW) assisted plasma current start-up has been demonstrated for the first time in a tokamak. It was shown that plasma currents up to 17 kA can be generated non-inductively by 100 kW of RF power injected. With optimized vertical field ramps, plasma currents up to 33 kA have been achieved without the use of solenoid flux. It is shown that the plasma formation and current generation are governed predominantly by EBW current drive. Experimental results are consistent with ray-tracing and quasilinear Fokker-Planck modelling.

  10. Charge-Transfer State Dynamics Following Hole and Electron Transfer in Organic Photovoltaic Devices.

    PubMed

    Bakulin, Artem A; Dimitrov, Stoichko D; Rao, Akshay; Chow, Philip C Y; Nielsen, Christian B; Schroeder, Bob C; McCulloch, Iain; Bakker, Huib J; Durrant, James R; Friend, Richard H

    2013-01-01

    The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. Whereas CT state dynamics following electron transfer from donor to acceptor have been widely studied, there is not much known about the dynamics of bound CT states produced by hole transfer from the acceptor to the donor. In this letter, we compare the dynamics of CT states formed in the different charge-transfer pathways in a range of model systems. We show that the nature and dynamics of the generated CT states are similar in the case of electron and hole transfer. However the yield of bound and free charges is observed to be strongly dependent on the HOMOD-HOMOA and LUMOD-LUMOA energy differences of the material system. We propose a qualitative model in which the effects of static disorder and sampling of states during the relaxation determine the probability of accessing CT states favorable for charge separation.

  11. Electron guns and collectors developed at INP for electron cooling devices

    SciTech Connect

    Sharapa, A.N.; Shemyakin, A.V.

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  12. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

    NASA Astrophysics Data System (ADS)

    Cui, Yi; Lieber, Charles M.

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a ``bottom-up'' paradigm for electronics manufacturing.

  13. Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

    PubMed

    Cui, Y; Lieber, C M

    2001-02-01

    Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.

  14. Exploiting the colloidal nanocrystal library to construct electronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high–dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

  15. Exploiting the colloidal nanocrystal library to construct electronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

  16. Exploiting the colloidal nanocrystal library to construct electronic devices.

    PubMed

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second. PMID:27124455

  17. Electron deuteron scattering with HERA, a letter of intent for an experimental programme with the H1 detector

    SciTech Connect

    T. Alexopoulos; et. al.

    2003-12-01

    This document outlines the case for a program of electron-deuteron scattering measurements at HERA using the H1 detector. The goals of the e D program are to map the partonic structure of the nucleon at large Q2 and low x, to explore the valence quark distributions at the highest x values, to provide a precise measurement of the strong coupling constant and to investigate the parton recombination phenomena revealed in shadowing and their relationship to diffraction. The importance of these measurements for the understanding of the perturbative and non-perturbative aspects of QCD thought to be responsible for nucleon structure is discussed, as is the significance of the measurements for future experimental programs. Some modifications to both the H1 apparatus and the HERA accelerator are necessary to realize this program; these are presented in the document. Mention is also made of questions that will remain unanswered following the completion of the above program and the potential role of HERA and of H1 in investigating these questions is outlined. Physicists and Institutes interested in supporting this project are asked to inform Max Klein (klein@ifh.de) and Tim Greenshaw (green@hep.ph.liv.ac.uk) that they would like to have their names on the Letter of Intent by Wednesday 30th April 2003.

  18. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2006-01-17

    The employment of metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The fuel cell includes an electrolyte membrane comprising a membrane support structure comprising bacterial cellulose, an anode disposed on one side of the electrolyte membrane, and a cathode disposed on an opposite side of the electrolyte membrane. At least one of the anode and the cathode comprises an electrode support structure comprising bacterial cellulose, and a catalyst disposed in or on the electrode support structure.

  19. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect

    Qu, Bo E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang E-mail: qhgong@pku.edu.cn

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  20. Calcium chloride electron injection/extraction layers in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Qu, Bo; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang

    2014-01-01

    Nontoxic calcium chloride (CaCl2) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl2 was 3.5 V and 21 960 cd/m2, respectively. OLED with 1.5 nm CaCl2 possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl2 was comparable to that of the control device with LiF. Therefore, CaCl2 has the potential to be used as the CBL for organic electronic devices.

  1. Opto-electronic devices with nanoparticles and their assemblies

    NASA Astrophysics Data System (ADS)

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (< 100nm) particles provide tremendous possibilities due to their unique electrical, optical, and mechanical properties. Plethora of NPs with various chemical composition, size and shape has been synthesized. Clever designs of sub-wavelength structures enable observation of unusual properties of materials, and have led to new areas of research such as metamaterials. This dissertation describes two self-assemblies of gold nanoparticles, leading to an ultra-soft thin film and multi-functional single electron device at room temperature. First, the layer-by-layer self-assembly of 10nm Au nanoparticles and polyelectrolytes is shown to behave like a cellular-foam with modulus below 100 kPa. As a result, the composite thin film (˜ 100nm) is 5 orders of magnitude softer than an equally thin typical polymer film. The thin film can be compressed reversibly to 60% strain. The extraordinarily low modulus and high compressibility are advantageous in pressure sensing applications. The unique mechanical properties of the composite film lead to development of an ultra-sensitive tactile imaging device capable of screening for breast cancer. On par with human finger sensitivity, the tactile device can detect a 5mm imbedded object up to 20mm below the surface with low background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au

  2. Individual carbon nanotubes for quantum electronic and quantum photonic devices

    NASA Astrophysics Data System (ADS)

    Ai, Nan

    2011-12-01

    Carbon nanotubes (CNTs) are promising materials since their unique one dimensional geometry leads to remarkable physical properties such as ballistic transport, long mean free path, large direct band gaps, high mechanical tensile strength and strong exciton binding energies, which make them attractive candidates for applications in high-performance nanoelectronics and nanophotonics. CNT-based field-effect transistors (CNT-FETs) are considered to be ideally suited for future nanoelectronics. Single CNT-FETs made by depositing metal electrodes on top of individual CNTs with E-beam lithography have achieved great performance but are limited for massive large area integrated circuit fabrication. Therefore, this thesis demonstrates characteristics of CNT-FETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition (CVD), resulting in CNT arrays directly bridging source and drain. The demonstrated access to individual CNTs with pronounced semiconducting behavior opens also the possibility to form more advanced nanoelectronic structures such as CNT quantum dots. CNT-based single electron transistors (CNT-SETS) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. In addition to existing CNT-SETS based on individual CNTs, we have fabricated the first CNT-SETS based on in-plane grown CNTs using the CVD technique. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices. Blinking and spectral diffusion are hallmarks of nanoscale light emitters and a challenge for creating stable fluorescent biomarkers or efficient nonclassical light sources. The studies of blinking of CNTs are still in the explorative stage. In this thesis, I show the first experimental

  3. Optical sensor array platform based on polymer electronic devices

    NASA Astrophysics Data System (ADS)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  4. Ultra-thin layer packaging for implantable electronic devices

    NASA Astrophysics Data System (ADS)

    Hogg, A.; Aellen, T.; Uhl, S.; Graf, B.; Keppner, H.; Tardy, Y.; Burger, J.

    2013-07-01

    State of the art packaging for long-term implantable electronic devices generally uses reliable metal and glass housings; however, these are limited in the miniaturization potential and cost reduction. This paper focuses on the development of biocompatible hermetic thin-film packaging based on poly-para-xylylene (Parylene-C) and silicon oxide (SiOx) multilayers for smart implantable microelectromechanical systems (MEMS) devices. For the fabrication, a combined Parylene/SiOx single-chamber deposition system was developed. Topological aspects of multilayers were characterized by atomic force microscopy and scanning electron microscopy. Material compositions and layer interfaces were analyzed by Fourier transform infrared spectrometry and x-ray photoelectron spectroscopy. To evaluate the multilayer corrosion protection, water vapor permeation was investigated using a calcium mirror test. The calcium mirror test shows very low water permeation rates of 2 × 10-3 g m-2 day-1 (23 °C, 45% RH) for a 4.7 µm multilayer, which is equivalent to a 1.9 mm pure Parylene-C coating. According to the packaging standard MIL-STD-883, the helium gas tightness was investigated. These helium permeation measurements predict that a multilayer of 10 µm achieves the hermeticity acceptance criterion required for long-term implantable medical devices.

  5. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices

    PubMed Central

    Chen, Duan; Wei, Guo-Wei

    2010-01-01

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  6. Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices.

    PubMed

    Chen, Duan; Wei, Guo-Wei

    2010-06-20

    The miniaturization of nano-scale electronic devices, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. Modeling and simulation of this class of problems have emerged as an important topic in applied and computational mathematics. This work presents mathematical models and computational algorithms for the simulation of nano-scale MOSFETs. We introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential of the nano-electronic device. This framework enables us to put microscopic and macroscopic descriptions in an equal footing at nano scale. By optimization of the energy functional, we derive consistently-coupled Poisson-Kohn-Sham equations. Additionally, layered structures are crucial to the electrostatic and transport properties of nano transistors. A material interface model is proposed for more accurate description of the electrostatics governed by the Poisson equation. Finally, a new individual dopant model that utilizes the Dirac delta function is proposed to understand the random doping effect in nano electronic devices. Two mathematical algorithms, the matched interface and boundary (MIB) method and the Dirichlet-to-Neumann mapping (DNM) technique, are introduced to improve the computational efficiency of nano-device simulations. Electronic structures are computed via subband decomposition and the transport properties, such as the I-V curves and electron density, are evaluated via the non-equilibrium Green's functions (NEGF) formalism. Two distinct device configurations, a double-gate MOSFET and a four-gate MOSFET, are considered in our three-dimensional numerical simulations. For these devices, the current fluctuation and voltage threshold lowering effect induced by the discrete dopant model are explored. Numerical convergence

  7. Polyaniline/single-walled carbon nanotube composite electronic devices

    NASA Astrophysics Data System (ADS)

    Ramamurthy, P. C.; Malshe, A. M.; Harrell, W. R.; Gregory, R. V.; McGuire, K.; Rao, A. M.

    2004-11-01

    Composites of high molecular weight polyaniline (PANI) and various weight percentages of single-walled carbon nanotubes (SWNT) were fabricated using solution processing. Electrical characteristics of metal-semiconductor (MS) devices fabricated from the PANI/SWNT composites were studied. Current-voltage ( I- V) characteristics of these devices indicate a significant increase in current with an increase in carbon nanotube concentration in the composite. The dominant transport mechanisms operating in these devices were investigated by plotting the forward I- V data on a log-log scale, which revealed two power-law regions with different exponents. In the lower voltage range, the exponent is approximately 1, implying that the charge transport mechanism is governed by Ohm's law. The charge transport mechanism in the higher voltage range, where the exponent varies between 1.1 and 1.7, is consistent with space-charge-limited (SCL) emission in the presence of shallow traps. The critical voltage ( Vc), which characterizes the onset of SCL conduction, decreases with increasing SWNT concentration. In addition, Vc was observed to increase with temperature. These initial results indicate that with further improvements in material consistency and reduction in defect densities, the polyaniline/single-walled carbon nanotube composite material can be used to fabricate organic electronic devices leading to many useful applications in microelectronics.

  8. Simulations of charge transfer in Electron Multiplying Charge Coupled Devices

    NASA Astrophysics Data System (ADS)

    Bush, N.; Stefanov, K.; Hall, D.; Jordan, D.; Holland, A.

    2014-12-01

    Electron Multiplying Charge Coupled Devices (EMCCDs) are a variant of traditional CCD technology well suited to applications that demand high speed operation in low light conditions. On-chip signal amplification allows the sensor to effectively suppress the noise introduced by readout electronics, permitting sub-electron read noise at MHz pixel rates. The devices have been the subject of many detailed studies concerning their operation, however there has not been a study into the transfer and multiplication process within the EMCCD gain register. Such an investigation has the potential to explain certain observed performance characteristics, as well as inform further optimisations to their operation. In this study, the results from simulation of charge transfer within an EMCCD gain register element are discussed with a specific focus on the implications for serial charge transfer efficiency (CTE). The effects of operating voltage and readout speed are explored in context with typical operating conditions. It is shown that during transfer, a small portion of signal charge may become trapped at the semiconductor-insulator interface that could act to degrade the serial CTE in certain operating conditions.

  9. 78 FR 16707 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-18

    .... International Trade Commission has received a complaint entitled Certain Electronic Devices Having Placeshifting... From the Federal Register Online via the Government Publishing Office ] INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having Placeshifting or Display Replication Functionality and...

  10. Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

    NASA Technical Reports Server (NTRS)

    Nguyen, Truong X.

    2005-01-01

    Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

  11. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    PubMed

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared.

  12. Electronic SSKIN pathway: reducing device-related pressure ulcers.

    PubMed

    Campbell, Natalie

    2016-08-11

    This article describes how an interprofessional project in a London NHS Foundation Trust was undertaken to develop an intranet-based medical device-related pressure ulcer prevention and management pathway for clinical staff working across an adult critical care directorate, where life-threatening events require interventions using medical devices. The aim of this project was to improve working policies and processes to define key prevention strategies and provide clinicians with a clear, standardised approach to risk and skin assessment, equipment use, documentation and reporting clinical data using the Trust's CareVue (electronic medical records), Datix (incident reporting and risk-management tool) and eTRACE (online clinical protocol ordering) systems. The process included the development, trial and local implementation of the pathway using collaborative teamwork and the SSKIN care bundle tool. The experience of identifying issues, overcoming challenges, defining best practice and cascading SSKIN awareness training is shared. PMID:27523768

  13. Development of medical electronic devices in the APL space department

    NASA Technical Reports Server (NTRS)

    Newman, A. L.

    1985-01-01

    Several electronic devices for automatically correcting specific defects in a body's physiologic regulation and allowing approximately normal functioning are described. A self-injurious behavior inhibiting system (SIBIS) is fastened to the arm of a person with chronic self-injurious behavior patterns. An electric shock is delivered into the arm whenever the device senses above-threshold acceleration of the head such as occur with head-bangers. Sounding a buzzer tone with the shock eventually allows transference of the aversive stimulus to the buzzer so shocks are no longer necessary. A programmable implantable medication system features a solenoid pump placed beneath the skin and refueled by hypodermic needle. The pump functions are programmable and can deliver insulin, chemotherapy mixes and/or pain killers according to a preset schedule or on patient demand. Finally, an automatic implantible defibrillator has four electrodes attached directly to the heart for sensing electrical impulses or emitting them in response to cardiac fibrillation.

  14. Cardiac Implantable Electronic Device Infection: From an Infection Prevention Perspective

    PubMed Central

    Sastry, Sangeeta; Rahman, Riaz; Yassin, Mohamed H.

    2015-01-01

    A cardiac implantable electronic device (CIED) is indicated for patients with severely reduced ejection fraction or with life-threatening cardiac arrhythmias. Infection related to a CIED is one of the most feared complications of this life-saving device. The rate of CIED infection has been estimated to be between 2 and 25; though evidence shows that this rate continues to rise with increasing expenditure to the patient as well as healthcare systems. Multiple risk factors have been attributed to the increased rates of CIED infection and host comorbidities as well as procedure related risks. Infection prevention efforts are being developed as defined bundles in numerous hospitals around the country given the increased morbidity and mortality from CIED related infections. This paper aims at reviewing the various infection prevention measures employed at hospitals and also highlights the areas that have relatively less established evidence for efficacy. PMID:26550494

  15. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  16. Development of High Power Electron Beam Measuring and Analyzing System for Microwave Vacuum Electron Devices

    NASA Astrophysics Data System (ADS)

    Ruan, C. J.; Wu, X. L.; Li, Q. S.; Li, C. S.

    The measurement and analysis of high power electron beam during its formation and transmission are the basic scientific problems and key techniques for the development of high performance microwave vacuum electron devices, which are widely used in the fields of military weapon, microwave system and scientific instruments. In this paper, the dynamic parameters measurement and analysis system being built in Institute of Electronics, Chinese Academy of Sciences (IECAS) recently are introduced. The instrument are designed to determine the cross-section, the current density, and the energy resolution of the high power electron beam during its formation and transmission process, which are available both for the electron gun and the electron optics system respectively. Then the three dimension trajectory images of the electron beam can be rebuilt and display with computer controlled data acquisition and processing system easily. Thus, much more complicated structures are considered and solved completely to achieve its detection and analysis, such as big chamber with 10-6 Pa high vacuum system, the controlled detector movement system in axis direction with distance of 600 mm inside the vacuum chamber, the electron beam energy analysis system with high resolution of 0.5%, and the electron beam cross-section and density detector using the YAG: Ce crystal and CCD imaging system et al. At present, the key parts of the instrument have been finished, the cross-section experiment of the electron beam have been performed successfully. Hereafter, the instrument will be used to measure and analyze the electron beam with the electron gun and electron optics system for the single beam and multiple beam klystron, gyrotron, sheet beam device, and traveling wave tube etc. thoroughly.

  17. An electronic portal imaging device as a physics tool.

    PubMed

    Curtin-Savard, A; Podgorsak, E B

    1997-01-01

    An electronic portal imaging device (EPID) can be used not only to acquire megavoltage patient images but also to measure certain radiation beam parameters of the linear accelerator. EPID images can be used to verify field junctions, center of collimator rotation, or radiation vs. light field coincidence. If the EPID images are calibrated in terms of dose rate, an EPID can be applied to beam penumbra measurement, collimator transmission determination, or compensator verification. Beam parameters measured with EPIDs are in close agreement with those measured with film or ionization chamber, making EPIDs reliable physics tools for quality control of various beam parameters in radiotherapy. PMID:9243462

  18. Personal Electronic Devices and Their Interference with Aircraft Systems

    NASA Technical Reports Server (NTRS)

    Ross, Elden; Ely, Jay J. (Technical Monitor)

    2001-01-01

    A compilation of data on personal electronic devices (PEDs) attributed to having created anomalies with aircraft systems. Charts and tables display 14 years of incidents reported by pilots to the Aviation Safety Reporting System (ASRS). Affected systems, incident severity, sources of anomaly detection, and the most frequently identified PEDs are some of the more significant data. Several reports contain incidents of aircraft off course when all systems indicated on course and of critical events that occurred during landings and takeoffs. Additionally, PEDs that should receive priority in testing are identified.

  19. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  20. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  1. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  2. 78 FR 32442 - Certain Cases for Portable Electronic Devices; Determination Not To Review an Initial...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-30

    ... COMMISSION Certain Cases for Portable Electronic Devices; Determination Not To Review an Initial... sale within the United States after importation of certain cases for portable electronic devices by... portable electronic devices by reason of infringement of various claims of the '561 patent. The...

  3. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  4. 49 CFR 220.307 - Use of railroad-supplied electronic devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Use of railroad-supplied electronic devices. 220... RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RAILROAD COMMUNICATIONS Electronic Devices § 220.307 Use of railroad-supplied electronic devices. (a) General restriction. A railroad operating...

  5. 76 FR 72439 - Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-23

    ... COMMISSION Certain Consumer Electronics and Display Devices and Products Containing Same; Receipt of... received a complaint entitled In Re Certain Consumer Electronics and Display Devices and Products... electronics and display devices and products containing same. The complaint names Research In Motion Ltd....

  6. Gunn effect and transferred electron devices. Citations from the NTIS data base

    NASA Astrophysics Data System (ADS)

    Reed, W. E.

    1980-06-01

    A bibliography containing 99 abstracts addressing the Gunn effect and transferred electron devices is presented. The application of Gunn effect and transferred electron devices to microwave generation, amplification, and control is included. The Gunn effect in semiconductors is dicussed along with the design, fabrication, and properties of Gunn diodes and transferred electron devices.

  7. Electronic heat current rectification in hybrid superconducting devices

    SciTech Connect

    Fornieri, Antonio Giazotto, Francesco; Martínez-Pérez, María José

    2015-05-15

    In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a single hybrid tunnel junction, we will show how the rectification efficiency can be largely increased by combining multiple junctions in an asymmetric chain of tunnel-coupled islands. We propose three different designs, analyzing their performance and their potential advantages. Besides being relevant from a fundamental physics point of view, this kind of devices might find important technological application as fundamental building blocks in solid-state thermal nanocircuits and in general-purpose cryogenic electronic applications requiring energy management.

  8. Polarization Effects in Methylammonium Lead Iodide Electronic Devices

    NASA Astrophysics Data System (ADS)

    Labram, John; Fabini, Douglas; Perry, Erin; Lehner, Anna; Wang, Hengbin; Glaudell, Anne; Wu, Guang; Evans, Hayden; Buck, David; Cotta, Robert; Echegoyen, Luis; Wudl, Fred; Seshadri, Ram; Chabinyc, Michael

    The immense success of group IV and III-V semiconductors has resulted in disruptive new photovoltaic (PV) cell technologies emerging extremely infrequently. For this reason, the recent progress in Methylammonium Lead Iodide (MAPbI3) solar cells can be viewed as a highly significant historic event. Despite the staggering recent progress made in reported power conversion efficiency (PCE), debate remains intense on the nature of the various instabilities synonymous with these devices. Using various electronic device measurements, we here present a body of experimental evidence consistent with the existence of a mobile ionic species within the MAPbI3 perovskite. Temperature-dependent transistor measurements reveal operating FET devices only below approximately 210K. This is attributed to ionic screening of the (otherwise charge-neutral) semiconductor-dielectric interface. Temperature-dependent pulsed-gate and impedance spectroscopy experiments also reveal behavior consistent with this interpretation. MAPbI3 PV cells were found to possess a PCE which decreases significantly below 210K. Combined, these set of measurements provide an interesting and consistent description of the internal processes at play within the MAPbI3 perovskite structure.

  9. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  10. Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

    SciTech Connect

    Long, Mingsheng; Gong, Youpin; Wei, Xiangfei; Zhu, Chao; Xu, Jianbao; Liu, Ping; Guo, Yufen; Li, Weiwei; Liu, Liwei; Liu, Guangtong

    2014-04-14

    We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to ∼120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature.

  11. Methods for synchronizing a countdown routine of a timer key and electronic device

    SciTech Connect

    Condit, Reston A.; Daniels, Michael A.; Clemens, Gregory P.; Tomberlin, Eric S.; Johnson, Joel A.

    2015-06-02

    A timer key relating to monitoring a countdown time of a countdown routine of an electronic device is disclosed. The timer key comprises a processor configured to respond to a countdown time associated with operation of the electronic device, a display operably coupled with the processor, and a housing configured to house at least the processor. The housing has an associated structure configured to engage with the electronic device to share the countdown time between the electronic device and the timer key. The processor is configured to begin a countdown routine based at least in part on the countdown time, wherein the countdown routine is at least substantially synchronized with a countdown routine of the electronic device when the timer key is removed from the electronic device. A system and method for synchronizing countdown routines of a timer key and an electronic device are also disclosed.

  12. Recent progress in printed 2/3D electronic devices

    NASA Astrophysics Data System (ADS)

    Klug, Andreas; Patter, Paul; Popovic, Karl; Blümel, Alexander; Sax, Stefan; Lenz, Martin; Glushko, Oleksandr; Cordill, Megan J.; List-Kratochvil, Emil J. W.

    2015-09-01

    New, energy-saving, efficient and cost-effective processing technologies such as 2D and 3D inkjet printing (IJP) for the production and integration of intelligent components will be opening up very interesting possibilities for industrial applications of molecular materials in the near future. Beyond the use of home and office based printers, "inkjet printing technology" allows for the additive structured deposition of photonic and electronic materials on a wide variety of substrates such as textiles, plastics, wood, stone, tiles or cardboard. Great interest also exists in applying IJP in industrial manufacturing such as the manufacturing of PCBs, of solar cells, printed organic electronics and medical products. In all these cases inkjet printing is a flexible (digital), additive, selective and cost-efficient material deposition method. Due to these advantages, there is the prospect that currently used standard patterning processes can be replaced through this innovative material deposition technique. A main issue in this research area is the formulation of novel functional inks or the adaptation of commercially available inks for specific industrial applications and/or processes. In this contribution we report on the design, realization and characterization of novel active and passive inkjet printed electronic devices including circuitry and sensors based on metal nanoparticle ink formulations and the heterogeneous integration into 2/3D printed demonstrators. The main emphasis of this paper will be on how to convert scientific inkjet knowledge into industrially relevant processes and applications.

  13. 78 FR 4418 - Electronic Submission Process for Requesting Export Certificates From the Center for Devices and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-22

    ... HUMAN SERVICES Food and Drug Administration Electronic Submission Process for Requesting Export... availability of an electronic submission process for requesting export certificates for products regulated by FDA's Center for Devices and Radiological Health (CDRH). The electronic process will help fulfill...

  14. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  15. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    PubMed

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  16. Letter Imperfect

    ERIC Educational Resources Information Center

    Kramer, Stephen

    2003-01-01

    In this essay, the author, a 5th-grade teacher, questions how well a standardized test can measure his students. This article presents a letter he wrote for the Washington state science test scorer regarding his students' test scores. He shares stories about some of the students in his class. He points out that tests can turn out to be more like…

  17. Electron Transport Simulations of 4-Terminal Crossed Graphene Nanoribbons Devices

    NASA Astrophysics Data System (ADS)

    Brandimarte, Pedro; Papior, Nick R.; Engelund, Mads; Garcia-Lekue, Aran; Frederiksen, Thomas; Sánchez-Portal, Daniel

    Recently, it has been reported theoretically a current switching mechanism by voltage control in a system made by two perpendicular 14-armchair graphene nanoribbons (GNRs). In order to investigate the possibilities of using crossed GNRs as ON/OFF devices, we have studied their electronic and transport properties as function structural parameters determining the crossing. Our calculations were performed with TranSIESTA code, which has been recently generalized to consider N >= 1 arbitrarily distributed electrodes at finite bias. We find that the transmission along each individual GNR and among them strongly depends on the stacking. For a 60° rotation angle, the lattice matching in the crossing region provokes a strong scattering effect that translates into an increased interlayer transmission. FP7 FET-ICT PAMS-project (European Commission, contract 610446), MINECO (Grant MAT2013-46593-C6-2-P) and Basque Dep. de Educación, UPV/EHU (Grant IT-756-13).

  18. Single Glucose Biofuel Cells Implanted in Rats Power Electronic Devices

    PubMed Central

    Zebda, A.; Cosnier, S.; Alcaraz, J.-P.; Holzinger, M.; Le Goff, A.; Gondran, C.; Boucher, F.; Giroud, F.; Gorgy, K.; Lamraoui, H.; Cinquin, P.

    2013-01-01

    We describe the first implanted glucose biofuel cell (GBFC) that is capable of generating sufficient power from a mammal's body fluids to act as the sole power source for electronic devices. This GBFC is based on carbon nanotube/enzyme electrodes, which utilize glucose oxidase for glucose oxidation and laccase for dioxygen reduction. The GBFC, implanted in the abdominal cavity of a rat, produces an average open-circuit voltage of 0.57 V. This implanted GBFC delivered a power output of 38.7 μW, which corresponded to a power density of 193.5 μW cm−2 and a volumetric power of 161 μW mL−1. We demonstrate that one single implanted enzymatic GBFC can power a light-emitting diode (LED), or a digital thermometer. In addition, no signs of rejection or inflammation were observed after 110 days implantation in the rat. PMID:23519113

  19. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Jansen, Valerie Malyvanh [Memphis, TN; Woodward, Jonathan [Knoxville, TN

    2010-09-28

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  20. Metallization of bacterial cellulose for electrical and electronic device manufacture

    DOEpatents

    Evans, Barbara R.; O'Neill, Hugh M.; Jansen, Valerie Malyvanh; Woodward, Jonathan

    2011-06-07

    A method for the deposition of metals in bacterial cellulose and for the employment of the metallized bacterial cellulose in the construction of fuel cells and other electronic devices is disclosed. The method for impregnating bacterial cellulose with a metal comprises placing a bacterial cellulose matrix in a solution of a metal salt such that the metal salt is reduced to metallic form and the metal precipitates in or on the matrix. The method for the construction of a fuel cell comprises placing a hydrated bacterial cellulose support structure in a solution of a metal salt such that the metal precipitates in or on the support structure, inserting contact wires into two pieces of the metal impregnated support structure, placing the two pieces of metal impregnated support structure on opposite sides of a layer of hydrated bacterial cellulose, and dehydrating the three layer structure to create a fuel cell.

  1. Electron cyclotron beam measurement system in the Large Helical Device

    SciTech Connect

    Kamio, S. Takahashi, H.; Kubo, S.; Shimozuma, T.; Yoshimura, Y.; Igami, H.; Ito, S.; Kobayashi, S.; Mizuno, Y.; Okada, K.; Osakabe, M.; Mutoh, T.

    2014-11-15

    In order to evaluate the electron cyclotron (EC) heating power inside the Large Helical Device vacuum vessel and to investigate the physics of the interaction between the EC beam and the plasma, a direct measurement system for the EC beam transmitted through the plasma column was developed. The system consists of an EC beam target plate, which is made of isotropic graphite and faces against the EC beam through the plasma, and an IR camera for measuring the target plate temperature increase by the transmitted EC beam. This system is applicable to the high magnetic field (up to 2.75 T) and plasma density (up to 0.8 × 10{sup 19} m{sup −3}). This system successfully evaluated the transmitted EC beam profile and the refraction.

  2. Prevention, Diagnosis, and Treatment of Cardiac Implantable Electronic Device Infections.

    PubMed

    Leung, Steven; Danik, Stephan

    2016-06-01

    Cardiac implantable electronic device (CIED) infections are complex medical problems that are increasingly encountered. They are associated with significant morbidity and mortality with tremendous economic cost. The current review will emphasize the prevention, diagnosis, and treatment of this clinical entity using the relatively limited evidence that is currently available. Because there is a paucity of high quality evidence regarding prevention, diagnosis, and treatment of CIED infections, this review will attempt to summarize the best evidence as well as to suggest, when possible, paradigms for care. The topic of CIED infections is a dynamic one as the scope of CIED continues to widen. Furthermore, there are promising advancements in CIED technology which may help reduce its occurrence the future. Unfortunately, significant gaps in knowledge remain, and definitive recommendations regarding CIED infections and future studies should be directed at improving our ability to prevent infections. PMID:27147510

  3. Front-end electronics for impedimetric microfluidic devices

    NASA Astrophysics Data System (ADS)

    Ojarand, Jaan; Giannitsis, Athanasios T.; Min, Mart; Land, Raul

    2011-05-01

    Impedance spectroscopy is a common approach in assessing passive electrical properties of biological matter, however, serious problems appear in microfluidic devices in connection with distortion free signal acquisition from microelectrodes. The quality of impedance measurements highly depends on the presence of stray capacitances, signal distortions, and accompanying noises. Measurement deficiencies may be minimized with optimized electronics and sensing electrodes. The quality can further be improved with appropriate selection of measuring signals and also with selection of measuring methods such as a choice between current or voltage sources and between differential or singleended techniques. The microfluidic device that we present here incorporates an impedance sensor, which consists of an array of two sequential pairs of parallel microelectrodes, embedded in a microfluidic channel. All electronics and fluidic components are placed inside a metal holder, which ensures electric and fluidic connections to peripheral instruments. This configuration provides short electric connections and proper shielding. The method that we are using to evaluate the sample's impedance is the differential measurement technique, capable of suppressing the common mode signals and interferences, appearing in the signal-conditioning front-end circuit. Besides, it opens the possibility for compensating stray effects of the electrodes. For excitation we employ wideband signals, such as chirps or multifreqyency signals, which allow fast measurements, essential in the most impedimetric experiments in biology. The impedance spectra cover the frequency range between 10kHz - 10MHz. This is essential for accessing information relating to β-dispersion, which characterizes the cell's structural properties. We present two measurement schemes: (i) an in-phase differential method, which employs two transimpedance amplifiers, and (ii) an anti-phase method, which uses one transimpedance amplifier

  4. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  5. The cardiac implantable electronic device power source: evolution and revolution.

    PubMed

    Mond, Harry G; Freitag, Gary

    2014-12-01

    Although the first power source for an implantable pacemaker was a rechargeable nickel-cadmium battery, it was rapidly replaced by an unreliable short-life zinc-mercury cell. This sustained the small pacemaker industry until the early 1970s, when the lithium-iodine cell became the dominant power source for low voltage, microampere current, single- and dual-chamber pacemakers. By the early 2000s, a number of significant advances were occurring with pacemaker technology which necessitated that the power source should now provide milliampere current for data logging, telemetric communication, and programming, as well as powering more complicated pacing devices such as biventricular pacemakers, treatment or prevention of atrial tachyarrhythmias, and the integration of innovative physiologic sensors. Because the current delivery of the lithium-iodine battery was inadequate for these functions, other lithium anode chemistries that can provide medium power were introduced. These include lithium-carbon monofluoride, lithium-manganese dioxide, and lithium-silver vanadium oxide/carbon mono-fluoride hybrids. In the early 1980s, the first implantable defibrillators for high voltage therapy used a lithium-vanadium pentoxide battery. With the introduction of the implantable cardioverter defibrillator, the reliable lithium-silver vanadium oxide became the power source. More recently, because of the demands of biventricular pacing, data logging, and telemetry, lithium-manganese dioxide and the hybrid lithium-silver vanadium oxide/carbon mono-fluoride laminate have also been used. Today all cardiac implantable electronic devices are powered by lithium anode batteries.

  6. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  7. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Electron Transport Materials: Synthesis, Properties and Device Performance

    SciTech Connect

    Cosimbescu, Lelia; Wang, Liang; Helm, Monte L.; Polikarpov, Evgueni; Swensen, James S.; Padmaperuma, Asanga B.

    2012-06-01

    We report the design, synthesis and characterization, thermal and photophysical properties of two silane based electron transport materials, dibenzo[b,d]thiophen-2-yltriphenylsilane (Si{phi}87) and (dibenzo[b,d]thiophen-2-yl)diphenylsilane (Si{phi}88) and their performance in blue organic light emitting devices (OLEDs). The utility of these materials in blue OLEDs with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C']picolinate (Firpic) as the phosphorescent emitter was demonstrated. Using the silane Si{phi}87 as the electron transport material (ETm) an EQE of 18.2% was obtained, with a power efficiency of 24.3 lm/W (5.8V at 1mA/cm{sup 2}), in a heterostructure. When Si{phi}88 is used, the EQE is 18.5% with a power efficiency of 26.0 lm/W (5.5V at 1mA/cm{sup 2}).

  9. 76 FR 45860 - In the Matter of Certain Electronic Devices, Including Wireless Communication Devices, Portable...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-01

    ... Music and Data Processing Devices, and Tablet Computers; Notice of Institution of Investigation... communication devices, portable music and data processing devices, and tablet computers by reason of... communication devices, portable music and data processing devices, and tablet computers that infringe one...

  10. 78 FR 6130 - Certain Electronic Digital Media Devices and Components Thereof: Commission Determination To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-29

    ... COMMISSION Certain Electronic Digital Media Devices and Components Thereof: Commission Determination To... certain electronic digital media devices and components thereof by reason of infringement of certain....usitc.gov . The public record for this investigation may be viewed on the Commission's electronic...

  11. 77 FR 68829 - Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-16

    ... COMMISSION Certain Electronic Digital Media Devices and Components Thereof; Notice of Request for Statements... limited exclusion order against certain electronic digital media devices and components thereof imported... electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during...

  12. 77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-16

    ... COMMISSION Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of... States after importation of certain mobile electronic devices incorporating haptics, by reason of the... viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired...

  13. Thin silicon strip devices for direct electron detection in transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Moldovan, Grigore; Li, Xiaobing; Wilshaw, Peter; Kirkland, Angus

    2008-06-01

    Indirect imaging detection systems used in transmission electron microscopy (TEM) impose a range of restrictions limiting performance that can be easily surpassed with direct sensing devices. A set of generic requirements is presented here first, illustrating the present detection needs and setting the context for further development in electron detection at TEM energy range. The use of directly exposed Si strip detectors in TEM is then investigated by means of Monte Carlo simulation of the electron-sensor interaction, showing that a sensitive layer with a thickness in the range of 50 μm is needed to achieve satisfactory efficiency. The results obtained here strongly indicate that improved performance would be achieved by replacing current indirect imaging systems with directly exposed thin Si strip detectors.

  14. Dosimetric properties of the Theraview fluoroscopic electronic portal imaging device.

    PubMed

    Glendinning, A G; Bonnett, D E

    2000-05-01

    Electronic portal imaging devices (EPIDs) can be used for non-imaging applications in radiotherapy such as patient dosimetry. Of the systems available, the fluoroscopic camera-based EPID Theraview (InfiMed Inc.) has not been studied to date, and a review of the dosimetric properties of the system is presented here. In the "single set-up" mode of image acquisition, pixel intensity increases sublinearly with applied dose. The response was dependent on the system's video signal gain and showed a threshold dose to the detector in the range 0.05-0.35 cGy, and pixel saturation at detector doses in the range 1.2-1.6 cGy. Repeated exposures of the EPID were observed to be extremely reproducible (standard deviation 0.5%). The sensitivity of the system showed a linear decline of 0.04% day-1 over a 68-day period, during which time the relative off-axis response within 10 x 10 cm2 field was constant to within a standard deviation of 0.56%. The system shows spatial non-uniformity, which requires correction for application to dose measurements in two-dimensions. Warm-up of the camera control unit required a period of at least 40 min and was associated with an enhancement in pixel intensity of up to 12%. A radiation dose history effect was observed at doses as low as 0.2 Gy. Camera dark current was shown to be negligible at normal accelerator operation. No discernible image distortion was found. Mechanical stability on gantry rotation was also assessed and image displacement of up to 5 mm at the isocentre was observed. It was concluded that the device could be used for dosimetry provided necessary precautions were observed and corrections made. PMID:10884749

  15. The cardiac implantable electronic device power source: evolution and revolution.

    PubMed

    Mond, Harry G; Freitag, Gary

    2014-12-01

    Although the first power source for an implantable pacemaker was a rechargeable nickel-cadmium battery, it was rapidly replaced by an unreliable short-life zinc-mercury cell. This sustained the small pacemaker industry until the early 1970s, when the lithium-iodine cell became the dominant power source for low voltage, microampere current, single- and dual-chamber pacemakers. By the early 2000s, a number of significant advances were occurring with pacemaker technology which necessitated that the power source should now provide milliampere current for data logging, telemetric communication, and programming, as well as powering more complicated pacing devices such as biventricular pacemakers, treatment or prevention of atrial tachyarrhythmias, and the integration of innovative physiologic sensors. Because the current delivery of the lithium-iodine battery was inadequate for these functions, other lithium anode chemistries that can provide medium power were introduced. These include lithium-carbon monofluoride, lithium-manganese dioxide, and lithium-silver vanadium oxide/carbon mono-fluoride hybrids. In the early 1980s, the first implantable defibrillators for high voltage therapy used a lithium-vanadium pentoxide battery. With the introduction of the implantable cardioverter defibrillator, the reliable lithium-silver vanadium oxide became the power source. More recently, because of the demands of biventricular pacing, data logging, and telemetry, lithium-manganese dioxide and the hybrid lithium-silver vanadium oxide/carbon mono-fluoride laminate have also been used. Today all cardiac implantable electronic devices are powered by lithium anode batteries. PMID:25387600

  16. Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

    NASA Astrophysics Data System (ADS)

    Yip, Hin-Lap

    Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

  17. System and method for interfacing large-area electronics with integrated circuit devices

    DOEpatents

    Verma, Naveen; Glisic, Branko; Sturm, James; Wagner, Sigurd

    2016-07-12

    A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

  18. Emergency Dosimetry Using Ceramic Components in Personal Electronic Devices

    NASA Astrophysics Data System (ADS)

    Kouroukla, E. C.; Bailiff, I. K.; Terry, I.

    2014-02-01

    The rapid assessment of radiation dose to members of the public exposed to significant levels of ionizing radiation during a radiological incident presents a significant difficulty in the absence of planned radiation monitoring. However, within most personal electronic devices components such as resistors with alumina substrates can be found that have potentially suitable properties as solid state dosimeters using luminescence measurement techniques. The suitability of several types of ceramic-based components (e.g., resonators, inductors and resistors) has been previously examined using optically stimulated luminescence (OSL) and thermoluminescence (TL) techniques to establish their basic characteristics for the retrospective determination of absorbed dose. In this paper, we present results obtained with aluminum oxide surface mount resistors extracted from mobile phones that further extend this work. Very encouraging results have been obtained related to the measurement of luminescence sensitivity, dose response, reusability, limit of detection, signal reproducibility and known-dose recovery. However, the alumina exhibits a rapid loss of the latent luminescence signal with time following irradiation attributed to athermal (or anomalous) fading. The issues related to obtaining a reliable correction protocol for this loss and the detailed examinations required of the fading behavior are discussed.

  19. Spray cooling characteristics of nanofluids for electronic power devices

    NASA Astrophysics Data System (ADS)

    Hsieh, Shou-Shing; Leu, Hsin-Yuan; Liu, Hao-Hsiang

    2015-03-01

    The performance of a single spray for electronic power devices using deionized (DI) water and pure silver (Ag) particles as well as multi-walled carbon nanotube (MCNT) particles, respectively, is studied herein. The tests are performed with a flat horizontal heated surface using a nozzle diameter of 0.5 mm with a definite nozzle-to-target surface distance of 25 mm. The effects of nanoparticle volume fraction and mass flow rate of the liquid on the surface heat flux, including critical heat flux (CHF), are explored. Both steady state and transient data are collected for the two-phase heat transfer coefficient, boiling curve/ cooling history, and the corresponding CHF. The heat transfer removal rate can reach up to 274 W/cm2 with the corresponding CHF enhancement ratio of 2.4 for the Ag/water nanofluids present at a volume fraction of 0.0075% with a low mass flux of 11.9 × 10-4 kg/cm2s.

  20. Spray cooling characteristics of nanofluids for electronic power devices.

    PubMed

    Hsieh, Shou-Shing; Leu, Hsin-Yuan; Liu, Hao-Hsiang

    2015-01-01

    The performance of a single spray for electronic power devices using deionized (DI) water and pure silver (Ag) particles as well as multi-walled carbon nanotube (MCNT) particles, respectively, is studied herein. The tests are performed with a flat horizontal heated surface using a nozzle diameter of 0.5 mm with a definite nozzle-to-target surface distance of 25 mm. The effects of nanoparticle volume fraction and mass flow rate of the liquid on the surface heat flux, including critical heat flux (CHF), are explored. Both steady state and transient data are collected for the two-phase heat transfer coefficient, boiling curve/ cooling history, and the corresponding CHF. The heat transfer removal rate can reach up to 274 W/cm(2) with the corresponding CHF enhancement ratio of 2.4 for the Ag/water nanofluids present at a volume fraction of 0.0075% with a low mass flux of 11.9 × 10(-4) kg/cm(2)s. PMID:25852429

  1. Effect of symmetry on electronic properties of nano devices

    SciTech Connect

    Lamba, Vijay Kr Anju,; Aditi; Garg, O. P.

    2015-06-24

    Nano devices are a promising candidate for new technology nowadays. Great effort has been devoted recently to understand the charge transport at the interfaces in nano junctions and the role of the symmetry in the transport properties of molecular junctions. However, these studies have been largely based on the analysis of the low-bias conductance, which does not allow elucidating the exact influence of the symmetry in both the electronic structure and transport characteristics of the interfaces. In this work we present a theoretical study of the transport properties, and how conductance changes with symmetry. Herein, we investigate a di-thiol benzene (DTB) single-molecule system in which sulphur group from the molecule are anchored to two facing gold electrodes. We have performed first principles calculations of the transport properties of these molecules using a combination of density functional theory and non-equilibrium Green’s function techniques. Our computational results show that for the asymmetric models, the onset of the larger current occurs at current and conductance in the negative bias regime than that in the positive bias regime, and with ΔL increasing the conductance peak shifts towards the lower negative bias so that the I(G)-V curves behave more asymmetric. Further with variation of electrode surface we found that coupling constant for coned shaped electrode is less as compared to 2X2, and 3X3 atom electrodes, so there will be lower potential barrier for canonical electrode in comparison to that of others.

  2. Endoscopic Electrosurgery in Patients with Cardiac Implantable Electronic Devices

    PubMed Central

    Baeg, Myong Ki; Kim, Sang-Woo; Ko, Sun-Hye; Lee, Yoon Bum; Hwang, Seawon; Lee, Bong-Woo; Choi, Hye Jin; Park, Jae Myung; Lee, In-Seok; Oh, Yong-Seog; Choi, Myung-Gyu

    2016-01-01

    Background/Aims: Patients with cardiac implantable electronic devices (CIEDs) undergoing endoscopic electrosurgery (EE) are at a risk of electromagnetic interference (EMI). We aimed to analyze the effects of EE in CIED patients. Methods: Patients with CIED who underwent EE procedures such as snare polypectomy, endoscopic submucosal dissection (ESD), and endoscopic retrograde cholangiopancreatography (ERCP) with endoscopic sphincterotomy (EST) were retrospectively analyzed. Postprocedural symptoms as well as demographic and outpatient follow-up data were reviewed through medical records. Electrical data, including preprocedural and postprocedural arrhythmia records, were reviewed through pacemaker interrogation, 24-hour Holter monitoring, or electrocardiogram. Results: Fifty-nine procedures in 49 patients were analyzed. Fifty procedures were performed in 43 patients with a pacemaker, and nine were performed in six patients with an implantable cardioverter-defibrillator. There were one gastric and 44 colon snare polypectomies, five gastric and one colon ESDs, and eight ERCPs with EST. Fifty-five cases of electrical follow-up were noted, with two postprocedural changes not caused by EE. Thirty-one pacemaker interrogations had procedure recordings, with two cases of asymptomatic tachycardia. All patients were asymptomatic with no adverse events. Conclusions: Our study reports no adverse events from EE in patients with CIED, suggesting that this procedure is safe. However, because of the possibility of EMI, recommendations on EE should be followed. PMID:26867552

  3. Front and backside processed thin film electronic devices

    DOEpatents

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  4. Graphene Electronic Device Based Biosensors and Chemical Sensors

    NASA Astrophysics Data System (ADS)

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  5. Novel transparent electrodes allow sustainable production of electronic devices

    SciTech Connect

    Constant, Kristen

    2010-12-27

    A novel technique for fabricating inexpensive, transparent electrodes from common metals has been developed by engineers and scientists at Iowa State University and Ames Laboratory. They exhibit very high transparency and are very good electrical conductors. This is a combination of properties that is difficult to achieve with common materials. The most frequently used transparent electrode in today's high-technology devices (such as LCD screens) is indium tin oxide (ITO). While ITO performs well in these applications, the supply of indium is very limited. In addition, it is rapidly decreasing as consumer demand for flat-panel electronics is skyrocketing. According to a 2004 US Geological Survey report, as little as 14 years exploitation of known indium reserves remains. In addition to increasing prices, the dwindling supply of indium suggests its use is not sustainable for future generations of electronics enthusiasts. Solar cells represent another application where transparent electrodes are used. To make solar-energy collection economically feasible, all parts of solar photovoltaics must be made more efficient and cost-effective. Our novel transparent electrodes have the potential to do both. In addition, there is much interest in developing more efficient, cost-effective, and environmentally friendly lighting. Incandescent light bulbs are very inefficient, because most of their energy consumption is wasted as heat. Fluorescent lighting is much more efficient but still uses mercury, an environmental toxin. An attractive alternative is offered by LEDs, which have very high efficiencies and long lifetimes, and do not contain mercury. If made bright enough, LED use for general lighting could provide a viable alternative. We have fabricated electrodes from more commonly available materials, using a technique that is cost effective and environmentally friendly. Most of today's electronic devices are made in specialized facilities equipped with low

  6. 76 FR 67200 - Prospective Grant of Exclusive License: Electron Paramagnetic Resonance Devices and Systems for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-31

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health Prospective Grant of Exclusive License: Electron... of use limited to electron paramagnetic resonance devices and systems for oximetry. DATES:...

  7. Factors Associated With Electronic Cigarette Users’ Device Preferences and Transition From First Generation to Advanced Generation Devices

    PubMed Central

    Veldheer, Susan; Hrabovsky, Shari; Nichols, Travis T.; Wilson, Stephen J.; Foulds, Jonathan

    2015-01-01

    Introduction: Electronic cigarettes (e-cigs) are becoming increasingly popular but little is known about how e-cig users’ transition between the different device types and what device characteristics and preferences may influence the transition. Methods: Four thousand four hundred twenty-one experienced e-cig users completed an online survey about their e-cig use, devices, and preferences. Participants included in analysis were ever cigarette smokers who used an e-cig at least 30 days in their lifetime and who reported the type of their first and current e-cig device and the nicotine concentration of their liquid. Analyses focused on transitions between “first generation” devices (same size as a cigarette with no button) and “advanced generation” devices (larger than a cigarette with a manual button) and differences between current users of each device type. Results: Most e-cig users (n = 2603, 58.9%) began use with a first generation device, and of these users, 63.7% subsequently transitioned to current use of an advanced generation device. Among users who began use with an advanced generation device (n = 1818, 41.1%), only 5.7% transitioned to a first generation device. Seventy-seven percent of current advanced generation e-cig users switched to their current device in order to obtain a “more satisfying hit.” Battery capabilities and liquid flavor choices also influenced device choice. Conclusion: E-cig users commonly begin use with a device shaped like a cigarette and transition to a larger device with a more powerful battery, a button for manual activation and a wider choice of liquid flavors. PMID:25744966

  8. Nonlinear quantum transport in low-dimensional electronic devices

    NASA Astrophysics Data System (ADS)

    Barrios, Andres Javier

    The study of transport processes in low-dimensional semiconductors requires a rigorous quantum mechanical treatment. However, a full-fledged quantum transport theory of electrons (or holes) in semiconductors of small scale, applicable in the presence of external fields of arbitrary strength, is still not available. In the literature, different approaches have been proposed, including: (a) the semiclassical Boltzmann equation, (b) perturbation theory based on Keldysh's Green functions, and (c) the Quantum Boltzmann Equation (QBE), previously derived by Van Vliet and coworkers, applicable in the realm of Kubo's Linear Response Theory (LRT). In the present work, we follow the method originally proposed by Van Wet in LRT. The Hamiltonian in this approach is of the form: H = H 0(E, B) + lambdaV, where H0 contains the externally applied fields, and lambdaV includes many-body interactions. This Hamiltonian differs from the LRT Hamiltonian, H = H0 - AF(t) + lambdaV, which contains the external field in the field-response part, -AF(t). For the nonlinear problem, the eigenfunctions of the system Hamiltonian, H0(E, B), include the external fields without any limitation on strength. In Part A of this dissertation, both the diagonal and nondiagonal Master equations are obtained after applying projection operators to the von Neumann equation for the density operator in the interaction picture, and taking the Van Hove limit, (lambda → 0, t → infinity, so that (lambda2 t)n remains finite). Similarly, the many-body current operator J is obtained from the Heisenberg equation of motion. In Part B, the Quantum Boltzmann Equation is obtained in the occupation-number representation for an electron gas, interacting with phonons or impurities. On the one-body level, the current operator obtained in Part A leads to the Generalized Calecki current for electric and magnetic fields of arbitrary strength. Furthermore, in this part, the LRT results for the current and conductance are

  9. Quality assurance of electron beams using a Varian electronic portal imaging device

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Heaton, R.; Norrlinger, B.; Islam, M.

    2013-08-01

    The feasibility of utilizing an electronic portal imaging device (EPID) for the quality assurance of electron beams was investigated. This work was conducted on a Varian 2100iX machine equipped with an amorphous silicon (aS1000) portal imager. The linearity of the imager pixel response as a function of exposed dose was first confirmed. The short-term reproducibility of the EPID response to electron beams was verified. Low (6 MeV), medium (12 MeV) and high (20 MeV) energies were tested, each along with small (6 × 6 cm2), medium (10 × 10 cm2) and large (20 × 20 cm2) applicators. Acquired EPID images were analyzed using an in-house MATLAB code for radiation field size, penumbra, symmetry and flatness. Field sizes and penumbra values agreed with those from film dosimetry to within 1 mm. Field symmetry and flatness constancies were measured over a period of three weeks. The results indicate that EPID can be used for routine quality assurance of electron beams.

  10. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    SciTech Connect

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  11. Use of portable electronic devices in a hospital setting and their potential for bacterial colonization.

    PubMed

    Khan, Amber; Rao, Amitha; Reyes-Sacin, Carlos; Hayakawa, Kayoko; Szpunar, Susan; Riederer, Kathleen; Kaye, Keith; Fishbain, Joel T; Levine, Diane

    2015-03-01

    Portable electronic devices are increasingly being used in the hospital setting. As with other fomites, these devices represent a potential reservoir for the transmission of pathogens. We conducted a convenience sampling of devices in 2 large medical centers to identify bacterial colonization rates and potential risk factors.

  12. 75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-28

    ... COMMISSION In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and... electronic devices, including mobile phones, portable music players, and computers, by reason of infringement... mobile phones, portable music players, or computers that infringe one or more of claims 1-12 of...

  13. 78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-06

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof... published a notice (78 FR 12892, May 31, 2013) of receipt of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof, DN 2958; the Commission...

  14. Activating Students' Interest and Participation in Lectures and Practical Courses Using Their Electronic Devices

    ERIC Educational Resources Information Center

    Wijtmans, Maikel; van Rens, Lisette; van Muijlwijk-Koezen, Jacqueline E.

    2014-01-01

    Interactive teaching with larger groups of students can be a challenge, but the use of mobile electronic devices by students (smartphones, tablets, laptops) can be used to improve classroom interaction. We have examined several types of tasks that can be electronically enacted in classes and practical courses using these devices: multiple choice…

  15. 77 FR 24764 - Visual-Manual NHTSA Driver Distraction Guidelines for In-Vehicle Electronic Devices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-25

    ... proposing voluntary NHTSA Driver Distraction Guidelines for in-vehicle electronic devices (77 FR 11200). The...-Vehicle Electronic Devices AGENCY: National Highway Traffic Safety Administration (NHTSA), Department of..., 2012, NHTSA published proposed voluntary NHTSA Driver Distraction Guidelines for in-vehicle...

  16. Ionic current devices-Recent progress in the merging of electronic, microfluidic, and biomimetic structures.

    PubMed

    Koo, Hyung-Jun; Velev, Orlin D

    2013-05-09

    We review the recent progress in the emerging area of devices and circuits operating on the basis of ionic currents. These devices operate at the intersection of electrochemistry, electronics, and microfluidics, and their potential applications are inspired by essential biological processes such as neural transmission. Ionic current rectification has been demonstrated in diode-like devices containing electrolyte solutions, hydrogel, or hydrated nanofilms. More complex functions have been realized in ionic current based transistors, solar cells, and switching memory devices. Microfluidic channels and networks-an intrinsic component of the ionic devices-could play the role of wires and circuits in conventional electronics.

  17. Letter: Meyerhofer

    SciTech Connect

    Mackinnon, A J

    2011-01-06

    This letter confirms that the Laboratory for Laser Energetics (LLE) was an important part of the FY10 NIF Polar Drive Exploding Pusher experiments on the National Ignition Facility (NIF). These experiments were designed by LLE to produce requested neutron yields to calibrate and qualify nuclear diagnostics. LLE built a deuterium-tritium filling system for the glass shells and provided them to LLNL for mounting. In FY10, four exploding pusher implosions were performed with measured neutron yields within a factor of two of requested and ion temperatures within 20% of requested. These implosions are proving to be an ideal platform for commissioning the nuclear diagnostic suite on the NIF and are achieving all of the objectives planned for this campaign.

  18. Development of advanced electron holographic techniques and application to industrial materials and devices.

    PubMed

    Yamamoto, Kazuo; Hirayama, Tsukasa; Tanji, Takayoshi

    2013-06-01

    The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming important techniques for materials science and device engineering. We also describe some applications of electron holography to the analysis of industrial materials and devices: GaAs compound semiconductors, solid oxide fuel cells and all-solid-state lithium ion batteries.

  19. Recent progress on thin-film encapsulation technologies for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

    2016-03-01

    Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

  20. Optimization of a plasma focus device as an electron beam source for thin film deposition

    NASA Astrophysics Data System (ADS)

    Zhang, T.; Lin, J.; Patran, A.; Wong, D.; Hassan, S. M.; Mahmood, S.; White, T.; Tan, T. L.; Springham, S. V.; Lee, S.; Lee, P.; Rawat, R. S.

    2007-05-01

    Electron beam emission characteristics from neon, argon, hydrogen and helium in an NX2 dense plasma focus (DPF) device were investigated in order to optimize the plasma focus device for deposition of thin films using energetic electron beams. A Rogowski coil and CCD based magnetic spectrometer were used to obtain temporal characteristics, total electron charge and energy distributions of electron emission from the NX2 DPF device. It is found that hydrogen should be the first choice for thin film deposition as it produces the highest electron beam charge and higher energy (from 50 to 200 keV) electrons. Neon is the next best choice as it gives the next highest electron beam charge with mid-energy (from 30 to 70 keV) electrons. The operation of NX2 with helium at voltages above 12 kV produces a mid-energy (from 30 to 70 keV) electron beam with low-electron beam charge, however, argon is not a good electron beam source for our NX2 DPF device. Preliminary results of the first ever thin film deposition using plasma focus assisted pulsed electron deposition using a hydrogen operated NX2 plasma focus device are presented.

  1. Threefold Increase of the Bulk Electron Temperature of Plasma Discharges in a Magnetic Mirror Device

    NASA Astrophysics Data System (ADS)

    Bagryansky, P. A.; Shalashov, A. G.; Gospodchikov, E. D.; Lizunov, A. A.; Maximov, V. V.; Prikhodko, V. V.; Soldatkina, E. I.; Solomakhin, A. L.; Yakovlev, D. V.

    2015-05-01

    This Letter describes plasma discharges with a high temperature of bulk electrons in the axially symmetric high-mirror-ratio (R =35 ) open magnetic system gas dynamic trap (GDT) in the Budker Institute (Novosibirsk). According to Thomson scattering measurements, the on-axis electron temperature averaged over a number of sequential shots is 660 ±50 eV with the plasma density being 0.7 ×1 019 m-3 ; in few shots, electron temperature exceeds 900 eV. This corresponds to at least a threefold increase with respect to previous experiments both at GDT and at other comparable machines, thus, demonstrating the highest quasistationary (about 1 ms) electron temperature achieved in open traps. The breakthrough is made possible by application of a new 0.7 MW /54.5 GHz electron cyclotron resonance heating system in addition to standard 5 MW heating by neutral beams, and application of a radial electric field to mitigate the flute instability.

  2. Statistical Modeling of Soi Devices for Low-Power Electronics.

    NASA Astrophysics Data System (ADS)

    Phelps, Mark Joseph

    1995-01-01

    This dissertation addresses the needs of low-power, large-scale integrated circuit device design, advanced materials technology, and computer simulation for statistical modeling. The main body of work comprises the creation and implementation of a software shell (STADIUM-SOI) that automates the application of statistics to commercial technology computer-aided design tools. The objective is to demonstrate that statistical design of experiments methodology can be employed for the advanced material technology of Silicon -On-Insulator (SOI) devices. The culmination of this effort was the successful modeling of the effect of manufacturing process variation on SOI device characteristics and the automation of this procedure.

  3. Damage of office supply, personal use items, and over-the-counter medical devices after sterilization by ethylene oxide gas, electron beam, and gamma radiation.

    PubMed

    Lucas, Anne D; Merritt, Katharine; Hitchins, Victoria M

    2004-01-01

    After letters containing Bacillus anthracis spores entered the U.S. mail in 2001, a problem emerged regarding how to decontaminate the letters, packages, and personal items in offices that received these letters. The effects of three sterilization methods (i.e. ethylene oxide gas [EO], electron beam [e-beam] radiation, and gamma radiation) were evaluated for a variety of office supply and equipment, personal use items, and over-the-counter medical devices. No single sterilization method was suitable for all items that could be mailed or found in an office. Damage or discoloration was evident for some items by each sterilization method. There were changes in the color of certain items, such as some of the packaging material, some pacifiers, some of the fabrics, and the nylon stockings after e-beam and gamma radiation. Both e-beam and gamma radiation damaged all film samples. Following EO sterilization and normal aeration, there were a number of samples with high (above 250 microg/g) levels of EO and samples with detectable ethylene chlorohydrin levels. The data would suggest that certain items exposed to EO sterilization must be further aerated prior to use, or discarded. Generic descriptions of products (such as plastics) or grouping of items (such as condoms) were not sufficient to predict what is safe in terms of EO residual levels remaining on an item. Successful decontamination of a wide variety of items will require careful selection of different sterilization methods. PMID:15635999

  4. An electronic device to record consensual reflex in human pupil.

    PubMed

    Pinheiro, H M; Costa, R M; Camilo, E N R; Gang, Hua

    2015-01-01

    Examination of the pupil offers an objective evaluation of visual function as well as the vegetative pathways to the eye. This work proposes the development of an effective method and a portable device to test the consensual pupillary reflex. The first results demonstrate the success of a new device construction and methodology to record the consensual reflex with different stimulus, in a situation of complete blockage of light.

  5. Scaling law of electron confinement in a zero beta polywell device

    NASA Astrophysics Data System (ADS)

    Gummersall, David V.; Carr, Matthew; Cornish, Scott; Kachan, Joe

    2013-10-01

    Orbital theory simulation was applied to an electron trap that uses a cube shaped magnetic cusp known as a Polywell device. The purpose of this device is to create a virtual cathode in order to achieve nuclear fusion using inertial electrostatic confinement. Analytical expressions of the electron confinement time and average position within the device were obtained in terms of the current in the field coils, the dimensions of the device, and the kinetic energy of the electrons. Comparisons with numerical simulations showed good agreement over a parameter range that spanned several orders of magnitude for the current. In addition, power loss from electrons exiting the trap was estimated in order to obtain minimum power requirement to maintain a virtual cathode within the device.

  6. "Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

    PubMed

    Irimia-Vladu, Mihai

    2014-01-21

    "Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

  7. Weak localization and electron–electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼T ‑0.4). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.

  8. 78 FR 69440 - Certain Electronic Imaging Devices; Notice of Request for Statements on the Public Interest

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-19

    ... COMMISSION Certain Electronic Imaging Devices; Notice of Request for Statements on the Public Interest AGENCY... Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during... public record for this investigation may be viewed on the Commission's electronic docket (EDIS) at...

  9. Hardening electronic devices against very high total dose radiation environments

    NASA Technical Reports Server (NTRS)

    Buchanan, B.; Shedd, W.; Roosild, S.; Dolan, R.

    1972-01-01

    The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.

  10. Modern Electronic Devices: An Increasingly Common Cause of Skin Disorders in Consumers.

    PubMed

    Corazza, Monica; Minghetti, Sara; Bertoldi, Alberto Maria; Martina, Emanuela; Virgili, Annarosa; Borghi, Alessandro

    2016-01-01

    : The modern conveniences and enjoyment brought about by electronic devices bring with them some health concerns. In particular, personal electronic devices are responsible for rising cases of several skin disorders, including pressure, friction, contact dermatitis, and other physical dermatitis. The universal use of such devices, either for work or recreational purposes, will probably increase the occurrence of polymorphous skin manifestations over time. It is important for clinicians to consider electronics as potential sources of dermatological ailments, for proper patient management. We performed a literature review on skin disorders associated with the personal use of modern technology, including personal computers and laptops, personal computer accessories, mobile phones, tablets, video games, and consoles. PMID:27172301

  11. Crossed Andreev reflection versus electron transfer in three-terminal graphene devices

    NASA Astrophysics Data System (ADS)

    Haugen, Håvard; Huertas-Hernando, Daniel; Brataas, Arne; Waintal, Xavier

    2010-05-01

    We investigate the transport properties of three-terminal graphene devices, where one terminal is superconducting and two are normal metals. The terminals are connected by nanoribbons. Electron transfer (ET) and crossed Andreev reflection (CAR) are identified via the nonlocal signal between the two normal terminals. Analytical expressions for ET and CAR in symmetric devices are found. We compute ET and CAR numerically for asymmetric devices. ET dominates CAR in symmetric devices, but CAR can dominate ET in asymmetric devices, where only the zero-energy modes of the zigzag nanoribbons contribute to the transport.

  12. Silicon microbench heater elements for packaging opto-electronic devices

    SciTech Connect

    Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

    1995-09-01

    Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

  13. Authentication of Radio Frequency Identification Devices Using Electronic Characteristics

    ERIC Educational Resources Information Center

    Chinnappa Gounder Periaswamy, Senthilkumar

    2010-01-01

    Radio frequency identification (RFID) tags are low-cost devices that are used to uniquely identify the objects to which they are attached. Due to the low cost and size that is driving the technology, a tag has limited computational capabilities and resources. This limitation makes the implementation of conventional security protocols to prevent…

  14. The transport properties of the molecular-scale B2C and BC3 electronic devices

    NASA Astrophysics Data System (ADS)

    Li, Guiqin; Li, Runqin

    2012-09-01

    The transport properties of the molecular-scale B2C and BC3 electronic devices are investigated with an ab initio method combined with a nonequilibrium Green function technique. The effects of different BC graphenes and ribbon lengths on the transport properties of the devices are significant. The results show that the devices with different BC graphenes and sizes have unusual transmission coefficients, which leads to special current transport mechanisms for the devices. Notably, the current strength of the device with the shortest ribbon length is the largest in three B2C devices, but the current strength of the device with the shortest ribbon length is the smallest for BC3 device.

  15. Modulated Degradation of Transient Electronic Devices through Multilayer Silk Fibroin Pockets.

    PubMed

    Brenckle, Mark A; Cheng, Huanyu; Hwang, Sukwon; Tao, Hu; Paquette, Mark; Kaplan, David L; Rogers, John A; Huang, Yonggang; Omenetto, Fiorenzo G

    2015-09-16

    The recent introduction of transient, bioresorbable electronics into the field of electronic device design offers promise for the areas of medical implants and environmental monitors, where programmed loss of function and environmental resorption are advantageous characteristics. Materials challenges remain, however, in protecting the labile device components from degradation at faster than desirable rates. Here we introduce an indirect passivation strategy for transient electronic devices that consists of encapsulation in multiple air pockets fabricated from silk fibroin. This approach is investigated through the properties of silk as a diffusional barrier to water penetration, coupled with the degradation of magnesium-based devices in humid air. Finally, silk pockets are demonstrated to be useful for controlled modulation of device lifetime. This approach may provide additional future opportunities for silk utility due to the low immunogenicity of the material and its ability to stabilize labile biotherapeutic dopants.

  16. 78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-24

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade...

  17. 78 FR 116 - Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-02

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Cases for Portable Electronic Devices: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: International Trade Commission. ACTION: Notice....

  18. 78 FR 73563 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-06

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products... in Default; Termination of Investigation AGENCY: U.S. International Trade Commission. ACTION:...

  19. 77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-15

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission....

  20. 77 FR 31875 - Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-30

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Imaging Devices; Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice....

  1. 77 FR 32995 - Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Imaging Devices Corrected: Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission. ACTION:...

  2. Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

    NASA Astrophysics Data System (ADS)

    Ward, R. R.; Dawson, W. J.; Zhu, L.; Kirschman, R. K.; Niu, G.; Nelms, R. M.; Mueller, O.; Hennessy, M. J.; Mueller, E. K.

    2006-03-01

    It is predicted that systems for electrical power generation, conversion and distribution on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. In view of this, we have taken initial steps in the investigation and development of SiGe semiconductor devices for cryogenic power applications. We have (1) simulated, designed, fabricated and characterized SiGe power diodes, and (2) evaluated these SiGe diodes in cryogenic power converters. Our target low-end temperature is 55 K, although we characterize devices and circuits down to approximately 30 K. We have demonstrated, experimentally, favorable characteristics for SiGe power diodes and have shown higher conversion efficiency compared to equivalent Si power diodes in a 100-W boost switching DC-DC power converter, over an ambient temperature range of 300 K down to approximately 30 K.

  3. Luminescent coupling in planar opto-electronic devices

    SciTech Connect

    Wilkins, Matthew Valdivia, Christopher E.; Gabr, Ahmed M.; Hinzer, Karin; Masson, Denis; Fafard, Simon

    2015-10-14

    Effects of luminescent coupling are observed in monolithic 5 V, five-junction GaAs phototransducers. Power conversion efficiency was measured at 61.6% ± 3% under the continuous, monochromatic illumination for which they were designed. Modeling shows that photon recycling can account for up to 350 mV of photovoltage in these devices. Drift-diffusion based simulations including a luminescent coupling term in the continuity equation show a broadening of the internal quantum efficiency curve which agrees well with experimental measurements. Luminescent coupling is shown to expand the spectral bandwidth of the phototransducer by a factor of at least 3.5 for devices with three or more junctions, even in cases where multiple absorption/emission events are required to transfer excess carriers into the limiting junction. We present a detailed description of the novel luminescent coupling modeling technique used to predict these performance enhancements.

  4. Overview of multimedia content protection in consumer electronics devices

    NASA Astrophysics Data System (ADS)

    Eskicioglu, Ahmet M.; Delp, Edward J., III

    2000-05-01

    A digital home network is a cluster of digital audio/visual (A/V) devices including set-top boxes, TVs, VCRs, DVD players, and general-purpose computing devices such as personal computers. The network may receive copyrighted digital multimedia content from a number of sources. This content may be broadcast via satellite or terrestrial systems, transmitted by cable operators, or made available as prepackaged media (e.g., a digital tape or a digital video disc). Before releasing their content for distribution, the content owners may require protection by specifying access conditions. Once the content is delivered to the consumer, it moves across home the network until it reaches its destination where it is stored or displayed. A copy protection system is needed to prevent unauthorized access to bit streams in transmission from one A/V device to another or while it is in storage on magnetic or optical media. Recently, two fundamental groups of technologies, encryption and watermarking, have been identified for protecting copyrighted digital multimedia content. This paper is an overview of the work done for protecting content owners' investment in intellectual property.

  5. Testing methods and techniques: Testing electrical and electronic devices: A compilation

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The methods, techniques, and devices used in testing various electrical and electronic apparatus are presented. The items described range from semiconductor package leak detectors to automatic circuit analyzer and antenna simulators for system checkout. In many cases the approaches can result in considerable cost savings and improved quality control. The testing of various electronic components, assemblies, and systems; the testing of various electrical devices; and the testing of cables and connectors are explained.

  6. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

    SciTech Connect

    Liu, Dong; Sun, Huarui; Pomeroy, James W.; Kuball, Martin; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.

    2015-12-21

    The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

  7. Device for the removal of sulfur dioxide from exhaust gas by pulsed energization of free electrons

    SciTech Connect

    Mizuno, A.; Clements, J.S.; Davis, R.H.

    1984-01-01

    The performance of a new device using pulsed streamer corona for the removal of sulfur dioxide from humid air has been evaluated. The pulsed streamer corona produced free electrons which enhance gas-phase chemical reactions, and convert SO/sub 2/ to sulfuric acid mist. The SO/sub 2/ removal efficiency was compared with that of the electron-beam flue-gas treatment process. The comparison demonstrates the advantage of the novel device.

  8. Sleep and use of electronic devices in adolescence: results from a large population-based study

    PubMed Central

    Hysing, Mari; Pallesen, Ståle; Stormark, Kjell Morten; Jakobsen, Reidar; Lundervold, Astri J; Sivertsen, Børge

    2015-01-01

    Objectives Adolescents spend increasingly more time on electronic devices, and sleep deficiency rising in adolescents constitutes a major public health concern. The aim of the present study was to investigate daytime screen use and use of electronic devices before bedtime in relation to sleep. Design A large cross-sectional population-based survey study from 2012, the youth@hordaland study, in Hordaland County in Norway. Setting Cross-sectional general community-based study. Participants 9846 adolescents from three age cohorts aged 16–19. The main independent variables were type and frequency of electronic devices at bedtime and hours of screen-time during leisure time. Outcomes Sleep variables calculated based on self-report including bedtime, rise time, time in bed, sleep duration, sleep onset latency and wake after sleep onset. Results Adolescents spent a large amount of time during the day and at bedtime using electronic devices. Daytime and bedtime use of electronic devices were both related to sleep measures, with an increased risk of short sleep duration, long sleep onset latency and increased sleep deficiency. A dose–response relationship emerged between sleep duration and use of electronic devices, exemplified by the association between PC use and risk of less than 5 h of sleep (OR=2.70, 95% CI 2.14 to 3.39), and comparable lower odds for 7–8 h of sleep (OR=1.64, 95% CI 1.38 to 1.96). Conclusions Use of electronic devices is frequent in adolescence, during the day as well as at bedtime. The results demonstrate a negative relation between use of technology and sleep, suggesting that recommendations on healthy media use could include restrictions on electronic devices. PMID:25643702

  9. Current Management of Cardiac Implantable Electronic Device Infections by Infectious Disease Specialists.

    PubMed

    Liang, Stephen Y; Beekmann, Susan E; Polgreen, Philip M; Warren, David K

    2016-10-15

    Management guidelines for cardiac implantable electronic device infections exist, but practice patterns of infectious disease (ID) specialists are not well known. We found that while many ID specialist practices mirror existing guidelines, a combination of complete device removal and prolonged antimicrobial therapy is favored when Staphylococcus aureus is involved.

  10. 78 FR 32689 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-31

    ... COMMISSION Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof..., Including Mobile Phones and Components Thereof, DN 2958; the Commission is soliciting comments on any public... communications devices, including mobile phones and components thereof. The complaint names as respondents...

  11. A Master Trainer Class for Professionals in Teaching the UltraCane Electronic Travel Device

    ERIC Educational Resources Information Center

    Penrod, William; Corbett, Michael D.; Blasch, Bruce

    2005-01-01

    Electronic travel devices are used to transform information about the environment that would normally be perceived through the visual sense into a form that can be perceived by people who are blind or have low vision through another sense (Blasch, Long, & Griffin-Shirley, 1989). They are divided into two broad categories: primary devices and…

  12. Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.

  13. Optical tracing of multiple charges in single-electron devices

    NASA Astrophysics Data System (ADS)

    Faez, Sanli; van der Molen, Sense Jan; Orrit, Michel

    2014-11-01

    Single molecules that exhibit narrow optical transitions at cryogenic temperatures can be used as local electric-field sensors. We derive the single-charge sensitivity of aromatic organic dye molecules, based on quantum mechanical considerations. Through numerical modeling, we demonstrate that by using currently available technologies it is possible to optically detect charging events in a granular network with a sensitivity better than 10-5e /√{Hz } and track positions of multiple electrons, simultaneously, with nanometer spatial resolution. Our results pave the way for minimally invasive optical inspection of electronic and spintronic nanodevices and building hybrid optoelectronic interfaces that function at both single-photon and single-electron levels.

  14. Electron Transport and Tunneling in Single Walled Carbon Nanotube Devices

    NASA Astrophysics Data System (ADS)

    Dirks, Travis; Mason, Nadya

    2007-03-01

    Carbon nanotubes remain a fertile ground for the exploration of interacting one-dimensional (1D) physics and Tomonaga-Luttinger liquid theory. Much is still unknown about the factors that influence the transport and tunneling properties of interacting 1D systems such as nanotubes. We report on experiments that use techniques such as multiple contacts on long nanotubes and tunable tunnel barriers to determine how the manifestations of electron-electron interactions, such as the zero-bias anomaly, depend on the length and defect strength in nanotubes.

  15. Simultaneous specimen and stage cleaning device for analytical electron microscope

    DOEpatents

    Zaluzec, Nestor J.

    1996-01-01

    An improved method and apparatus are provided for cleaning both a specimen stage, a specimen and an interior of an analytical electron microscope (AEM). The apparatus for cleaning a specimen stage and specimen comprising a plasma chamber for containing a gas plasma and an air lock coupled to the plasma chamber for permitting passage of the specimen stage and specimen into the plasma chamber and maintaining an airtight chamber. The specimen stage and specimen are subjected to a reactive plasma gas that is either DC or RF excited. The apparatus can be mounted on the analytical electron microscope (AEM) for cleaning the interior of the microscope.

  16. Advances in molecular electronics: Synthesis and testing of potential molecular electronic devices

    NASA Astrophysics Data System (ADS)

    Price, David Wilson, Jr.

    New potential molecular electronics devices have been synthesized based on our knowledge of previous systems that have come out of our group. Previous studies and current studies have shown that simple molecular systems demonstrate negative differential resistance (NDR) and memory characteristics. The new systems rely primarily on the redox properties of the compounds to improve upon the solid state properties already observed. Most of these new organic compounds use thiol-based "alligator clips" for attachment to metal surfaces. Some of the compounds, however, contain different "alligator clips," primarily isonitriles, for attachment to metal substrates. It is our hope that these new "alligator clips" will offer lower conductivity barriers (higher current density). Electrochemical tests have been performed in order to evaluate those redox properties and in the hope of using those electrochemical results as a predictive tool to evaluate the usefulness of those compounds. Also, organic structures with polymerizable functionalities have been synthesized in order to cross-link the molecules once they are a part of a self-assembled monolayer (SAM). This has been shown to enable the electrochemical growth of polypyrrole from a SAM in a controllable manner.

  17. Semiconductor Devices and Applications. Electronics Module 5. Instructor's Guide.

    ERIC Educational Resources Information Center

    Chappell, John; And Others

    This module is the fifth of 10 modules in the competency-based electronics series. Introductory materials include a listing of competencies addressed in the module, a parts/equipment list, and a cross-reference table of instructional materials. Sixteen instructional units cover: semiconductor materials; diodes; diode applications and…

  18. Measuring Conformational Dynamics of Single Biomolecules Using Nanoscale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Akhterov, Maxim V.; Choi, Yongki; Sims, Patrick C.; Olsen, Tivoli J.; Gul, O. Tolga; Corso, Brad L.; Weiss, Gregory A.; Collins, Philip G.

    2014-03-01

    Molecular motion can be a rate-limiting step of enzyme catalysis, but motions are typically too quick to resolve with fluorescent single molecule techniques. Recently, we demonstrated a label-free technique that replaced fluorophores with nano-electronic circuits to monitor protein motions. The solid-state electronic technique used single-walled carbon nanotube (SWNT) transistors to monitor conformational motions of a single molecule of T4 lysozyme while processing its substrate, peptidoglycan. As lysozyme catalyzes the hydrolysis of glycosidic bonds, two protein domains undergo 8 Å hinge bending motion that generates an electronic signal in the SWNT transistor. We describe improvements to the system that have extended our temporal resolution to 2 μs . Electronic recordings at this level of detail directly resolve not just transitions between open and closed conformations but also the durations for those transition events. Statistical analysis of many events determines transition timescales characteristic of enzyme activity and shows a high degree of variability within nominally identical chemical events. The high resolution technique can be readily applied to other complex biomolecules to gain insights into their kinetic parameters and catalytic function.

  19. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  20. LETTER TO THE EDITOR: Electronic structure and bonding properties in layered ternary carbide Ti3SiC2

    NASA Astrophysics Data System (ADS)

    Zhou, Yanchun; Sun, Zhimei

    2000-07-01

    Ab initio calculations based on the density-functional pseudopotential approach have been used to study the electronic structure and chemical bonding in layered machinable Ti3SiC2 ceramic. The calculations reveal that all three types of bonding - metallic, covalent and ionic - contribute to the bonding in Ti3SiC2. The high electric conductivity is attributed to the metallic bonding parallel to the basal plane and the high modulus and high melting point are attributed to the strong Ti-C-Ti-C-Ti covalent bond chains in the structure.

  1. Effects of partial hydrogenation on electronic transport properties in C60 molecular devices

    NASA Astrophysics Data System (ADS)

    Chen, L. N.; Cao, C.; Wu, X. Z.; Ma, S. S.; Huang, W. R.; Xu, H.

    2012-12-01

    By using nonequilibrium Green's functions in combination with the density-function theory, we investigate electronic transport properties of molecular devices with pristine and partial hydrogenation. The calculated results show that the electronic transport properties of molecular devices can be modulated by partial hydrogenation. Interestingly, our results exhibit negative differential resistance behavior in the case of the imbalance H-adsorption in C60 molecular devices under low bias. However, negative differential resistance behavior cannot be observed in the case of the balance H-adsorption. A mechanism is proposed for the hydrogenation and negative differential resistance behavior.

  2. Cardiovascular implantable electronic device infections: associated risk factors and prevention.

    PubMed

    Rohacek, Martin; Baddour, Larry M

    2015-01-01

    Infections of cardiovascular implantable electric devices (CIED) are a burden on patients and healthcare systems and should be prevented. The most frequent pathogens are coagulase-negative staphylococci and Staphylococcus aureus. The most important risk factors for CIED infections are diabetes mellitus, renal and heart failure, corticosteroid use, oral anticoagulation, fever within 24 hours before the procedure and leucocytosis, implantable cardioverter defibrillator compared with pacemaker, especially in the case of Staphylococcus aureus bacteraemia, lack of antibiotic prophylaxis, and postoperative haematoma and other wound complications. Other important risk factors are history of prior procedures and previous CIED infections, number of leads, use of povidone-iodine compared with chlorhexidine-alcohol, and centres and operators with a low volume of implants. To prevent CIED infections, patients undergoing CIED procedures and appropriate devices should be carefully selected, and interventions should be performed by trained operators. Antibiotic prophylaxis should be administered, and skin antisepsis should be done with chlorhexidine-alcohol. Oral anticoagulation should be continued during CIED procedures in high-risk patients for thromboembolism, instead of bridging with heparin. Early reintervention in cases of haematoma or lead dislodgement should be avoided. The implementation of infection prevention programmes reduces infection rates. More randomised controlled studies are needed to evaluate prevention strategies, especially skin preparation and antibiotic prophylaxis with glycopeptides. PMID:26230056

  3. Materials, structures, and devices for high-speed electronics

    NASA Astrophysics Data System (ADS)

    Woollam, John A.; Snyder, Paul G.

    1992-12-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  4. Materials, structures, and devices for high-speed electronics

    NASA Technical Reports Server (NTRS)

    Woollam, John A.; Snyder, Paul G.

    1992-01-01

    Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

  5. Writing Back and Forth: Class Letters.

    ERIC Educational Resources Information Center

    Fulwiler, Toby

    1997-01-01

    Recommends that college teachers and their students exchange weekly letters, in either paper or electronic form, as a familiar and friendly means of communication. The method increases dialog, suggests rethinking, and encourages rewriting while keeping the stakes low. Students respond well to the assignment. Samples of student letters and comments…

  6. Flexible and stretchable electronics for wearable healthcare devices and minimally invasive surgical tools

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeong; Lee, Mincheol; Lee, Hyunjae

    2016-05-01

    Recent advances in soft electronics have attracted great attention, largely due to their potential applications in personalized, bio-integrated healthcare devices. The mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs have presented many challenges, such as the low signalto- noise ratio of biosensors because of the incomplete integration of rigid devices with the body, inflammation and excessive immune responses of implanted stiff devices originated from friction and their foreign nature to biotic systems, and the considerable discomfort and consequent stress experienced by users when wearing/implanting these devices. Ultra-flexible and stretchable electronic devices are being highlighted due to their low system modulus and the intrinsic system-level softness that are important to solve these issues. Here, we describe our unique strategies for the nanomaterial synthesis and fabrication, their seamless assembly and integration, and the design and development of corresponding wearable healthcare devices and minimally invasive surgical tools. These bioelectronic systems fully utilize recent breakthroughs in unconventional soft electronics based on nanomaterials to address unsolved issues in clinical medicine and to provide new opportunities in the personalized healthcare.

  7. New electronic device powers hospital employee background checks.

    PubMed

    2001-09-01

    Ohio has a new electronic system for performing criminal background checks on potential employees. The Internet-based computer program, called WebCheck, was developed through the cooperation of Ohio's Bureau of Criminal Identification and Investigation and Cogent Systems, Inc., South Pasadena, CA. BCI&I initiated the development of WebCheck in response to Ohio law, which requires background checks on anyone applying for a job involving children and the elderly.

  8. Feasibility study of patient positioning verification in electron beam radiotherapy with an electronic portal imaging device (EPID).

    PubMed

    Ramm, U; Köhn, J; Rodriguez Dominguez, R; Licher, J; Koch, N; Kara, E; Scherf, C; Rödel, C; Weiß, C

    2014-03-01

    The purpose of this study is to demonstrate the feasibility of verification and documentation in electron beam radiotherapy using the photon contamination detected with an electronic portal imaging device. For investigation of electron beam verification with an EPID, the portal images are acquired irradiating two different tissue equivalent phantoms at different electron energies. Measurements were performed on an Elekta SL 25 linear accelerator with an amorphous-Si electronic portal imaging device (EPID: iViewGT, Elekta Oncology Systems, Crawley, UK). As a measure of EPID image quality contrast (CR) and signal-to-noise ratio (SNR) are determined. For characterisation of the imaging of the EPID RW3 slabs and a Gammex 467 phantom with different material inserts are used. With increasing electron energy the intensity of photon contamination increases, yielding an increasing signal-to-noise ratio, but images are showing a decreasing contrast. As the signal-to-noise ratio saturates with increasing dose a minimum of 50 MUs is recommended. Even image quality depends on electron energy and diameter of the patient, the acquired results are mostly sufficient to assess the accuracy of beam positioning. In general, the online EPID acquisition has been demonstrated to be an effective electron beam verification and documentation method. The results are showing that this procedure can be recommended to be routinely and reliably done in patient treatment with electron beams.

  9. Transition metal oxides for organic electronics: energetics, device physics and applications.

    PubMed

    Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

    2012-10-23

    During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed.

  10. Transition metal oxides for organic electronics: energetics, device physics and applications.

    PubMed

    Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

    2012-10-23

    During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed. PMID:22945550

  11. Fabrication techniques and applications of flexible graphene-based electronic devices

    NASA Astrophysics Data System (ADS)

    Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

    2016-04-01

    In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

  12. 77 FR 75189 - Certain Electronic Devices Having a Retractable USB Connector; Termination of an Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-19

    ... COMMISSION Certain Electronic Devices Having a Retractable USB Connector; Termination of an Investigation... viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons.... 77 FR 31039-40 (Aug. 12, 2011). The notice of investigation named more than forty respondents....

  13. Development of reliable electronic packaging solutions for spacecraft avionics miniaturization using embedded passice devices

    NASA Technical Reports Server (NTRS)

    Schatzel, Don

    2003-01-01

    Miniaturization of electronic packages will play a key rule in future space avionics systems. Smaller avionics packages will reduce payloads while providing greater functionality for information processing and mission instrumentation. Current surface mount technology discrete passive devices not only take up significant space but also add weight. To that end, the use of embedded passive devices, such as capacitors, inductors and resistors will be instrumental in allowing electronics to be made smaller and lighter. Embedded passive devices fabricated on silicon or like substrates using thin film technology, promise great savings in circuit volume, as well as potentially improving electrical performance by decreasing parasitic losses. These devices exhibit a low physical profile and allow the circuit footprint to be reduced by stacking passive elements within a substrate. Thin film technologies used to deposit embedded passive devices are improving and costs associated with the process are decreasing.

  14. Standard source for certification of optical-electronic devices

    NASA Astrophysics Data System (ADS)

    Fastova, Natalia I.; Maraev, Anton A.; Ishanin, Gennady G.

    2016-04-01

    To reduce the error at the certification of optoelectronic devices, sources and detectors of the standard sources and its diaphragm must be thermally stabilized in order to create a uniform background. We developed an uncooled model blackbody TCID-100 with working temperature up to 100°C with a thermally stabilized transmitter and the diaphragm set. The developed model is a cylinder made of red copper with a conical cavity. Cone length was chosen empirically to provide uniform heating over the entire length of the blackbody cavity. With the developed model, we conducted cavity temperature measurement transmitter, which enabled to evaluate the advantages and drawbacks of the blackbody design. In this article we examined models of blackbodies, the most popular types of cavities and the calculation of the thermal emissivity for them. We have designed blackbody and measured the cavity temperature change over the time.

  15. Laser cleaning in the process of electronic device production

    NASA Astrophysics Data System (ADS)

    Apostol, Ion G.; Ulieru, Dumitru G.; Dabu, Razvan V.; Ungureanu, Constantin; Rusen, L.

    2002-08-01

    Due to the continuous technological development in microelectronics and generally in precise materials micromachining there is a continuous need to develop more effective techniques to clean impurities from the surface. Current cleaning techniques used in microelectric devices fabrication lines have an integrated action on the whole surface or on a great part of it, are polluting the ambient and are not efficient for submicron particles. Due to this needs we have studied laser cleaning of silicon wafers with regards to direct applications in semiconductor manufacturing. We have analyzed the ablation effect of laser radiation of 1.06 micrometers on different materials currently used in microelectronic industry and the cleaning effect on a silicon support.

  16. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2016-07-05

    A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent.

  17. Device for providing high-intensity ion or electron beam

    DOEpatents

    McClanahan, Edwin D.; Moss, Ronald W.

    1977-01-01

    A thin film of a low-thermionic-work-function material is maintained on the cathode of a device for producing a high-current, low-pressure gas discharge by means of sputter deposition from an auxiliary electrode. The auxiliary electrode includes a surface with a low-work-function material, such as thorium, uranium, plutonium or one of the rare earth elements, facing the cathode but at a disposition and electrical potential so as to extract ions from the gas discharge and sputter the low-work-function material onto the cathode. By continuously replenishing the cathode film, high thermionic emissions and ion plasmas can be realized and maintained over extended operating periods.

  18. Complex influence of space environment on materials and electronic devices in the conditions of microgravity

    NASA Astrophysics Data System (ADS)

    Musabayev, T.; Zhantayev, Zh.; Grichshenko, V.

    2016-09-01

    The paper presents a new physical model describing the processes in materials and electronic devices under the influence of cosmic rays in microgravity. The model identifies specific features of formation of the area of radiation defects (ARD) in the electronic materials in microgravity. The mechanism of interaction between the ARD and memory modules in microgravity causing malfunction and failure of onboard electronics is considered. The results of failure of memory modules under real conditions are presented.

  19. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, L.E.

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region are described. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10/sup 17/ to 10/sup 20/.

  20. First principles modelling of contact resistance in molecular electronic devices.

    NASA Astrophysics Data System (ADS)

    Stokbro, Kurt; Taylor, Jeremy; Brandbyge, Mads

    2002-03-01

    We have used the TranSIESTA package[1,2] to investigate the contact resistance of gold-thiol bonds. The TranSIESTA package is a new density functional code employing local basis sets[3], combined with a non-equilibrium Greens function transport scheme. With this package we can calculate the selfconsistent electronic structure of a nanostructure coupled to 3-dimensional electrodes with different electrochemical potentials, using the same level of model chemistry for the electrodes as for the nanostructure. We have used the method to calculate the electron transport through DiThiol-Benzene (DTB) connected to gold electrodes. The transport properties have been calculated for a range of different molecule-electrode couplings, and I will discuss the influence of the coupling on the molecular conductance, and compare with experimental data. [1] M. Brandbyge, K. Stokbro, J. Taylor, J. L. Mozos, P. Ordejon, Material Research Society symposium proceedings volume 636, D9.25 (2000). [2] M. Brandbyge, K. Stokbro, J. Taylor, J. L. Mozos, P. Ordejon, Condmat 0110650 [3] SIESTA: D. Sanchez-Portal, P. Ordejon, E. Artacho and J. Soler, Int. J. Quantum Chem. 65, 453 (1997).

  1. LNL irradiation facilities for radiation damage studies on electronic devices

    NASA Astrophysics Data System (ADS)

    Bisello, D.; Candelori, A.; Giubilato, P.; Mattiazzo, S.; Pantano, D.; Silvestrin, L.; Tessaro, M.; Wyss, J.

    2016-11-01

    In this paper we will review the wide range of irradiation facilities installed at the INFN Legnaro National Laboratories and routinely used for radiation damage studies on silicon detectors, electronic components and systems. The SIRAD irradiation facility, dedicated to Single Event Effect (SEE) and bulk damage studies, is installed at the 14MV Tandem XTU accelerator and can deliver ion beams from H up to Au in the energy range from 28MeV to 300MeV. An Ion Electron Emission Microscope, also installed at SIRAD, allows SEE testing with micrometric sensitivity. For total dose tests, two facilities are presently available: an X-rays source and a 60Co γ -ray source. The 7MV Van de Graaff CN accelerator provides 1H beams in the energy range 2-7MeV and currents up to few μA for both total dose and bulk damage studies. At this facility, very high dose rates (up to ˜ 100 krad/s (SiO2)) can be achieved. Finally, also neutron beams are available, produced at the CN accelerator, by the reaction d + Be ⇒ n + B.

  2. MRT letter: Spatial distribution of vancomycin-induced damage in Staphylococcus epidermidis biofilm: an electron microscopic study.

    PubMed

    Singh, Rachna; Ray, Pallab; Das, Anindita; Sharma, Meera

    2010-07-01

    This study was planned to elucidate the efficacy of antibiotics on Staphylococcus epidermidis and Staphylococcus aureus biofilms by scanning electron microscopy (SEM). Biofilms of S. epidermidis ATCC 35984 and S. aureus ATCC 29213 were grown on black, polycarbonate membranes placed on tryptic soy agar plates for 48 h at 37 degrees C, and then exposed to vancomycin or amikacin or ciprofloxacin at clinically achievable levels for 24 h at 37 degrees C. The morphology of antibiotic-treated and untreated biofilms was elucidated by SEM. SEM analysis indicated a differential affection of S. epidermidis ATCC 35984 in the center and periphery of biofilm upon treatment with vancomycin. The center of biofilm revealed damaged cells with sparse distribution, smaller size, and irregular shape, whereas cells in the periphery were unaffected. This differential distribution of susceptibility within S. epidermidis ATCC 35984 biofilms was specific for vancomycin only and was not observed on exposure to amikacin or ciprofloxacin. No such response was found in S.aureus ATCC 29213 biofilms. Thus, our study suggests a spatial distribution of vancomycin-induced damage in S. epidermidis biofilms. To our knowledge, this is the first report that indicates a differential affection of S. epidermidis in the center and periphery of biofilm upon treatment with vancomycin. Studies on the factors controlling this differential distribution could provide valuable insights into the mechanisms of antimicrobial resistance in S. epidermidis biofilms.

  3. Implantable Electronic Cardiac Devices and Compatibility With Magnetic Resonance Imaging.

    PubMed

    Miller, Jared D; Nazarian, Saman; Halperin, Henry R

    2016-10-01

    There is a growing population of patients with implanted electronic cardiac devices and a concomitant increase in the use of magnetic resonance (MR). There are theoretical safety risks posed to such devices by MR. However, there are now considerable laboratory data and clinical experience demonstrating safety in this setting, assuming appropriate device selection and patient monitoring. Herein, we review these data and our safety protocol and the new generation of devices that have been prospectively designed and tested to be safe for MR scanning, assuming certain conditions are met (i.e., devices that are MR-conditional). We also argue that the available data do not support a complete transition to implantation of MR-conditional devices. PMID:27687201

  4. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    PubMed

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

  5. Recent Advance in Thermoelectric Devices for Electronics Cooling

    NASA Astrophysics Data System (ADS)

    Wang, Peng

    Thermal management of on-chip hot spot, with a heat flux of around 1000 W/cm2, has become one of the major challenges in the development of next-generation microprocessors. Solid state thermoelectric cooler (TEC) offers great promise for hot spot thermal management because of their compact structure, fast response, high reliability, localized cooling, and high flux removal capability. To date TEC has received great attentions in electronics cooling community as one of the potential hot spot cooling solutions. In this paper, recent development and application of hot spot cooling strategies based on micro thermoelectric technologies will be reviewed and discussed, three hot spot cooling concepts, including thinfilm thermoelectric cooling, mini-contact cooling, and semiconductor selfcooling in silicon substrate and germanium substrate will be discussed. The advantages and disadvantages of these on-chip cooling solutions for high flux hot spots will be evaluated.

  6. Introduction. Carbon-based electronics: fundamentals and device applications.

    PubMed

    Nicholas, Robin J; Mainwood, Alison; Eaves, Laurence

    2008-01-28

    Carbon-based materials offer a number of exciting possibilities for both new science and applications. Many of these are based on the novel band structure of graphene, by which solids mimic the properties of relativistic fermions and which offers the potential for high speed nanoscale electronics. When sheets of graphene are rolled up to make carbon nanotubes, further interesting properties are found; for example, both semiconducting and metallic nanotubes able to be produced. The novel properties of these new materials, together with the already remarkable properties of diamond itself, are discussed by a series of experts who came together in May 2007 to discuss and debate the potential for future development. PMID:18024353

  7. Device structure for electronic transport through individual molecules using nanoelectrodes

    NASA Astrophysics Data System (ADS)

    Ghosh, Subhasis; Halimun, Henny; Mahapatro, Ajit Kumar; Choi, Jaewon; Lodha, Saurabh; Janes, David

    2005-12-01

    We present a simple and reliable method for making electrical contacts to small organic molecules with thiol endgroups. Nanometer-scale gaps between metallic electrodes have been fabricated by passing a large current through a lithographically-patterned Au-line with appropriate thickness. Under appropriate conditions, the passage of current breaks the Au-line, creating two opposite facing electrodes separated by a gap comparable to the length of small organic molecules. Current-voltage characteristics have been measured both before and after deposition of short organic molecules. The resistance of single 1,4-benzenedithiol and 1,4-bezenedimethanedithiol molecules were found to be 9MΩ and 26MΩ, respectively. The experimental results indicate strong electronic coupling to the contacts and are discussed using a relatively simple model of mesoscopic transport. The use of electrodes formed on an insulating surface by lithography and electromigration provides a stable structure suitable for integrated circuit applications.

  8. Dihydroazulene: from controlling photochromism to molecular electronics devices.

    PubMed

    Broman, Søren Lindbæk; Nielsen, Mogens Brøndsted

    2014-10-21

    Recent synthetic advances allowing large-scale preparation and systematic functionalization of the dihydroazulene (DHA)-vinylheptafulvene (VHF) photo-/thermoswitch have enabled detailed studies on how to tune optical and switching properties and have paved the way for using this system as a functional unit in molecular electronics and materials chemistry. Since discovery of its photochromism in the 1980'ies, numerous examples of DHA-VHF systems have been developed, allowing multimode switching, fluorescence-control and fine tuning of absorbance and VHF half-lives, giving insights into the mechanism of the switching event. Here, we present an overview of the properties of the DHA-VHF system, together with some selected synthetic procedures which have paved the way for its development.

  9. PROTEOTRONICS: The emerging science of protein-based electronic devices

    NASA Astrophysics Data System (ADS)

    Alfinito, Eleonora; Pousset, Jeremy; Reggiani, Lino

    2015-10-01

    Protein-mediated charge transport is of relevant importance in the design of protein based electronics and in attaining an adequate level of understanding of protein functioning. This is particularly true for the case of transmembrane proteins, like those pertaining to the G protein coupled receptors (GPCRs). These proteins are involved in a broad range of biological processes like catalysis, substance transport, etc., thus being the target of a large number of clinically used drugs. This paper briefly reviews a variety of experiments devoted to investigate charge transport in proteins and present a unified theoretical model able to relate macroscopic experimental results with the conformations of the amino acids backbone of the single protein.

  10. Silk-based resorbable electronic devices for remotely controlled therapy and in vivo infection abatement.

    PubMed

    Tao, Hu; Hwang, Suk-Won; Marelli, Benedetto; An, Bo; Moreau, Jodie E; Yang, Miaomiao; Brenckle, Mark A; Kim, Stanley; Kaplan, David L; Rogers, John A; Omenetto, Fiorenzo G

    2014-12-01

    A paradigm shift for implantable medical devices lies at the confluence between regenerative medicine, where materials remodel and integrate in the biological milieu, and technology, through the use of recently developed material platforms based on biomaterials and bioresorbable technologies such as optics and electronics. The union of materials and technology in this context enables a class of biomedical devices that can be optically or electronically functional and yet harmlessly degrade once their use is complete. We present here a fully degradable, remotely controlled, implantable therapeutic device operating in vivo to counter a Staphylococcus aureus infection that disappears once its function is complete. This class of device provides fully resorbable packaging and electronics that can be turned on remotely, after implantation, to provide the necessary thermal therapy or trigger drug delivery. Such externally controllable, resorbable devices not only obviate the need for secondary surgeries and retrieval, but also have extended utility as therapeutic devices that can be left behind at a surgical or suturing site, following intervention, and can be externally controlled to allow for infection management by either thermal treatment or by remote triggering of drug release when there is retardation of antibiotic diffusion, deep infections are present, or when systemic antibiotic treatment alone is insufficient due to the emergence of antibiotic-resistant strains. After completion of function, the device is safely resorbed into the body, within a programmable period.

  11. New bio-inorganic photo-electronic devices based on photosynthetic proteins

    NASA Astrophysics Data System (ADS)

    Lebedev, Nikolai; Spano, Anthony; Trammell, Scott; Griva, Igor; Tsoi, Stanislav; Schnur, Joel M.

    2007-09-01

    Construction of efficient devices for light energy conversion, including photo-electronic and photovoltaic (PV) devices, is a big challenge for the current science and technology that will have important economic consequences. Most of the modern photovoltaic devices are based on silicon. An innovative approach to the construction of photovoltaic devices is the utilization of biological systems and principles designed for similar purposes by Nature. Biological electronic devices, proteins, have extremely high efficiency, precise spatial organization, and are inexpensive in fabrication. They can be fused with inorganic and organic materials such as conductors, semiconductors, conductive polymers, or quantum dots. The photosynthetic reaction center protein (RC) is one of the most advanced photo-electronic devices developed by Nature. It has nearly 100% quantum yield of primary charge separation, an extremely fast operation time (about 10 -9 s, or operation frequency of ~10 9 Hz), and a very efficient stabilization of separated charges (ratio of charge separation rate to that of charge recombination is about 10 4). The charge separation and stabilization takes place in a complex of 7 nm size and leads to the formation of a local electric field of about 10 6 V/cm. A coupling of photosynthetic RC to inorganic electrodes is attractive for the identification of the mechanisms of inter-protein electron transfer (ET) and for the possible applications in the construction of protein-based innovative photoelectronic and photovoltaic devices. In this presentation we describe a new type of hybrid bio-inorganic photoelectronic devices based on photosynthetic proteins and inorganic materials. Using genetically engineered bacterial RCs and specifically synthesized organic linkers, we were able to construct self-assembled and aligned protein complexes with various metals and semiconductors, including gold, indium tin oxide (ITO), nanoporous TiO II, highly ordered pyrolytic graphite

  12. Rational design of metal-organic electronic devices: A computational perspective

    NASA Astrophysics Data System (ADS)

    Chilukuri, Bhaskar

    Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device

  13. Letter to jane addams.

    PubMed

    Bloom, M

    1995-06-01

    This letter, written to one of the founding figures in social work, draws parallels between primary prevention at the beginning and the end of the twentieth century. As expected, the letter remains unanswered.

  14. Mechanical flip-chip for ultra-high electron mobility devices

    SciTech Connect

    Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; Laroche, Dominique; Lilly, Michael P.; Reno, John L.; West, Ken W.; Pfeiffer, Loren N.; Gervais, Guillaume

    2015-09-22

    In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

  15. Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

    PubMed Central

    Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; Laroche, Dominique; Lilly, Michael P.; Reno, John L.; West, Ken W.; Pfeiffer, Loren N.; Gervais, Guillaume

    2015-01-01

    Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility. PMID:26391400

  16. Use of photoelectronic image formation devices (electron photography, electron optical converters, television)

    NASA Technical Reports Server (NTRS)

    Prokofyeva, V. V.

    1973-01-01

    Electronic image amplification methods are used in variable star observations to increase significantly the volume of recorded information. Electronic cameras are the most efficient, while television cameras increase contrast of weak stars against the background of the sky.

  17. Threefold Increase of the Bulk Electron Temperature of Plasma Discharges in a Magnetic Mirror Device.

    PubMed

    Bagryansky, P A; Shalashov, A G; Gospodchikov, E D; Lizunov, A A; Maximov, V V; Prikhodko, V V; Soldatkina, E I; Solomakhin, A L; Yakovlev, D V

    2015-05-22

    This Letter describes plasma discharges with a high temperature of bulk electrons in the axially symmetric high-mirror-ratio (R=35) open magnetic system gas dynamic trap (GDT) in the Budker Institute (Novosibirsk). According to Thomson scattering measurements, the on-axis electron temperature averaged over a number of sequential shots is 660±50  eV with the plasma density being 0.7×10^{19}  m^{-3}; in few shots, electron temperature exceeds 900 eV. This corresponds to at least a threefold increase with respect to previous experiments both at GDT and at other comparable machines, thus, demonstrating the highest quasistationary (about 1 ms) electron temperature achieved in open traps. The breakthrough is made possible by application of a new 0.7  MW/54.5  GHz electron cyclotron resonance heating system in addition to standard 5 MW heating by neutral beams, and application of a radial electric field to mitigate the flute instability. PMID:26047233

  18. RED-LETTER DAYS

    EPA Science Inventory

    The word "red-letter" is an adjective meaning "of special significance." It's origin is from the practice of marking Christian holy days in red letters on calendars. The "red-letter days" to which I refer occurred while I was a graduate student of ...

  19. All About Letters.

    ERIC Educational Resources Information Center

    Post Office Dept., Washington, DC.

    This booklet, designed to promote the letter writing habit, provides information about writing letters in a variety of situations. It is divided into several short sections with illustrations. Reasons to write letters and postcards are offered by several authors and celebrites including Stevie Wonder, Darryl Stingley, and "Dear Abby." Addresses…

  20. On Becoming a Doctor of Humane Letters.

    PubMed

    Tribble Md, Curt

    2016-01-01

    In an era of rapid, cheap, and efficient electronic communication, the practice-and art-of letter writing has faded. There are many reasons for us as physicians and surgeons to resist this evolution. And, there are many opportunities to employ letter writing to the benefit of ourselves, our patients, and our colleagues. A true Doctor of Humane Letters is an honorary degree, generally awarded for significant contributions to society.  However, given that humane can be defined as showing compassion, understanding, mercy, and tolerance, we can all strive to be worthy of such a distinction. There are many mundane letters familiar to us all, such as letters of recommendation, letters of thanks, and letters of commendation. However, I would like to offer some suggestions about other less common, but useful, types of letters that might prove valuable to physicians both in training and in practice. These include letters of inquiry, condolence, reflection, and explanation, as well as some notes about missives that are often best written but not sent. PMID:27585190

  1. Peculiarities of the charge transport in the gas discharge electronic device with irradiated porous zeolite

    NASA Astrophysics Data System (ADS)

    Ozturk, Sevgul; Koseoglu, Kivilcim; Ozer, Metin; Salamov, Bahtiyar G.

    2015-11-01

    The influence of pressure and β-radiation (1 kGy β doses) on the charge transport mechanism, charge trapping effects in porous zeolite surfaces and breakdown voltage (UB) are discussed in atmospheric microplasmas for the first time. This is due to exposure the zeolite cathode (ZC) to β-radiation resulting in substantial decreases in the UB, discharge currents and conductivity due to increase in porosity of the material. Results indicated that the enhancement of plasma light intensity and electron emission from the ZC surface with the release of trapped electrons which are captured by the defect centers following β-irradiation. The porosity of the ZC and radiation defect centers has significant influence on the charge transport of the microstructure and optical properties of the devices manufactured on its base. Thus, we confirm that the ZCir is a suitable cathode material for plasma light source, field emission displays, energy storage devices and low power gas discharge electronic devices.

  2. Possible nano-spintronics devices with graphene as electron wave guides

    NASA Astrophysics Data System (ADS)

    Kusakabe, Koichi

    2009-03-01

    Another application of graphene to semiconductor spintronics devices is proposed theoretically. We have designed possible methods for fabrication of nano-scale device structures utilizing graphene as electron wave guides. Important techniques should be 1) formation of strong covalent bonding between a part of substrate and graphene, 2) creation of nano-sized superstructure with sharp edges inducing the grapheme edge states[1] by controlling interface between external electrodes and graphene, and 3) creation of nano-sized quantum structures based on the spinodal nano-decomposition. Several test simulations on the electronic states of proposed structures and theoretical estimation of functionality of graphene as an electron wave guide for semiconductor spintronics devices are presented. [1] M. Fujita, K. Wakabayashi, K. Nakada and K. Kusakabe, J. Phys. Soc. Jpn. 65, 1920 (1996).

  3. Direct Electron Heating at Moderate Harmonic Number for Compact Ignition Devices

    SciTech Connect

    R. Majeski

    1999-07-01

    Direct electron heating of compact ignition devices by radio-frequency power in the 300-400 MHz,range is discussed. The possible advantage of this approach to heating an ignition device, as opposed to resonant heating of an ion population, is the insensitivity to the exact value of the magnitude field. Heating with central power deposition during a toroidal field ramp is therefore possible.

  4. Impact of Electronic Device Use in Class on Pharmacy Students’ Academic Performance

    PubMed Central

    Johnson, Heather L.; Wrobel, Mark J.

    2012-01-01

    Objectives. To evaluate and assess the impact of pharmacy students’ electronic device (e-device) use during a lecture-based pharmacotherapeutics sequence. Methods. A validated survey instrument to assess e-device use was e-mailed to 238 second- (P2) and third-year (P3) pharmacy students. Grades were reviewed retrospectively and correlated with e-device use to determine its impact on academic performance. Results. Of 140 responding students (59% response rate), 106 reported using e-devices during class for course-related (91.5%) and non-course-related (81.1%) activities. When P2 and P3 students were combined, e-device use was not associated with academic performance (p = 0.70). Academic performance was not impacted among P3 students (p = 0.86), but P2 students performed better academically if they refrained from using e-devices during class (mean grade = 88.5% vs. 83.3%; p=0.019). Conclusions. The impact of e-device use on overall academic performance was negligible. Use of e-devices by students enrolled in their first pharmacotherapeutics course may negatively impact academics. PMID:23193331

  5. Acute effects of an alternative electronic-control-device waveform in swine.

    PubMed

    Jauchem, James; Beason, Charles W; Cook, Michael C

    2009-01-01

    In previous studies, repeated 5-s exposures of anesthetized pigs to an electronic control device (TASER International's Advanced TASER X26 device) resulted in acidosis and increases in blood electrolytes. In the current study, experiments were performed to investigate the effects of longer continuous exposures to a different electronic-control-device waveform. After intramuscular injection of tiletamine HCl and zolazepam HCl, anesthesia was maintained with propofol infusion. Ten pigs were exposed to either 30- or 60-s applications of an electronic waveform similar to the TASER-X26 device. Transient increases in potassium, and sodium were consistent with previous reports in the literature dealing with studies of muscle stimulation or exercise. Blood pH was significantly decreased after exposure, but subsequently returned to baseline levels. Lactate was highly elevated and remained somewhat increased even after three hrs. Serum myoglobin was increased after exposure and remained elevated for the 3-h follow-up period. Acidosis would appear to be one of the major concerns with long-duration (e.g., several min) exposures over a short period of time. Even with the extremely low pH immediately after exposure, all animals survived. On the basis of these results, further development of useful continuous-exposure electronic control devices is at least feasible, with the caveat that some medical monitoring of subjects may be required.

  6. Learning to write letters: examination of student and letter factors.

    PubMed

    Puranik, Cynthia S; Petscher, Yaacov; Lonigan, Christopher J

    2014-12-01

    Learning to write the letters of the alphabet is an important part of learning how to write conventionally. In this study, we investigated critical factors in the development of letter-writing skills using exploratory item response models to simultaneously account for variance in responses due to differences between students and between letters. Letter-writing skills were assessed in 415 preschool children aged 3 to 5 years. At the student level, we examined the contribution of letter-name knowledge, letter-sound knowledge, and phonological awareness to letter-writing skills. At the letter level, we examined seven intrinsic and extrinsic factors in understanding how preschool children learn to write alphabet letters: first letter of name, letters in name, letter order, textual frequency, number of strokes, symmetry, and letter type. Results indicated that variation in letter-writing skills was accounted for more by differences between students rather than by differences between letters, with most of the variability accounted for by letter-name knowledge and age. Although significant, the contribution of letter-sound knowledge and phonological awareness was relatively small. Student-level mechanisms underlying the acquisition of letter-writing skills are similar to the mechanisms underlying the learning of letter sounds. However, letter characteristics, which appear to play a major role in the learning of letter names and letter sounds, did not appear to influence learning how to write letters in a substantial way. The exception was if the letter was in the child's name. PMID:25181463

  7. Learning to write letters: examination of student and letter factors.

    PubMed

    Puranik, Cynthia S; Petscher, Yaacov; Lonigan, Christopher J

    2014-12-01

    Learning to write the letters of the alphabet is an important part of learning how to write conventionally. In this study, we investigated critical factors in the development of letter-writing skills using exploratory item response models to simultaneously account for variance in responses due to differences between students and between letters. Letter-writing skills were assessed in 415 preschool children aged 3 to 5 years. At the student level, we examined the contribution of letter-name knowledge, letter-sound knowledge, and phonological awareness to letter-writing skills. At the letter level, we examined seven intrinsic and extrinsic factors in understanding how preschool children learn to write alphabet letters: first letter of name, letters in name, letter order, textual frequency, number of strokes, symmetry, and letter type. Results indicated that variation in letter-writing skills was accounted for more by differences between students rather than by differences between letters, with most of the variability accounted for by letter-name knowledge and age. Although significant, the contribution of letter-sound knowledge and phonological awareness was relatively small. Student-level mechanisms underlying the acquisition of letter-writing skills are similar to the mechanisms underlying the learning of letter sounds. However, letter characteristics, which appear to play a major role in the learning of letter names and letter sounds, did not appear to influence learning how to write letters in a substantial way. The exception was if the letter was in the child's name.

  8. Development of a prototype T-shaped fast switching device for electron cyclotron current drive systems

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Kenji; Nagashima, Koji; Honzu, Toshihiko; Saigusa, Mikio; Oda, Yasuhisa; Takahashi, Koji; Sakamoto, Keishi

    2016-09-01

    A T-shaped high-power switching device composed of circular corrugated waveguides with three ports and double dielectric disks made of sapphire was proposed as a fast switching device based on a new principle in electron cyclotron current drive systems. This switching device has the advantages of operating at a fixed frequency and being compact. The design of the prototype switch was obtained by numerical simulations using a finite-difference time-domain (FDTD) method. The size of these components was optimized for the frequency band of 170 GHz. Low-power tests were carried out in a cross-shaped model.

  9. Systems and Methods for Fabricating Carbon Nanotube-Based Vacuum Electronic Devices

    NASA Technical Reports Server (NTRS)

    Manohara, Harish (Inventor); Toda, Risaku (Inventor); Del Castillo, Linda Y. (Inventor); Murthy, Rakesh (Inventor)

    2015-01-01

    Systems and methods in accordance with embodiments of the invention proficiently produce carbon nanotube-based vacuum electronic devices. In one embodiment a method of fabricating a carbon nanotube-based vacuum electronic device includes: growing carbon nanotubes onto a substrate to form a cathode; assembling a stack that includes the cathode, an anode, and a first layer that includes an alignment slot; disposing a microsphere partially into the alignment slot during the assembling of the stack such that the microsphere protrudes from the alignment slot and can thereby separate the first layer from an adjacent layer; and encasing the stack in a vacuum sealed container.

  10. 76 FR 54496 - In the Matter of Certain Electronic Devices Having a Digital Television Receiver and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-01

    ... COMMISSION In the Matter of Certain Electronic Devices Having a Digital Television Receiver and Components..., and the sale within the United States after importation of certain electronic devices having a digital... for this investigation may be viewed on the Commission's electronic docket (EDIS) at...

  11. 76 FR 39898 - In the Matter of Certain Electronic Devices With Multi-Touch Enabled Touchpads and Touchscreens...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... COMMISSION [Investigation No. 337-TA-714 In the Matter of Certain Electronic Devices With Multi-Touch Enabled... importation, and sale within the United States after importation of certain electronic devices with multi... public record for this investigation may be viewed on the Commission's electronic docket (EDIS) at...

  12. 78 FR 77490 - Certain Electronic Imaging Devices; Notice of Commission Determination To Review-in-Part a Final...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-23

    ... COMMISSION Certain Electronic Imaging Devices; Notice of Commission Determination To Review-in-Part a Final... certain electronic imaging devices by reason of infringement of certain claims of U.S. Patent Nos. 6,504... for this investigation may be viewed on the Commission's electronic docket (EDIS) at...

  13. 75 FR 28651 - In the Matter of Certain Electronic Paper Towel Dispensing Devices and Components Thereof; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-21

    ... COMMISSION In the Matter of Certain Electronic Paper Towel Dispensing Devices and Components Thereof; Notice... the sale within the United States after importation of certain electronic paper towel dispensing... electronic paper towel dispensing devices or components thereof that infringe one or more of claims 1-7 of...

  14. Emission analysis of large number of various passenger electronic devices in aircraft

    NASA Astrophysics Data System (ADS)

    Schüür, Jens; Oppermann, Lukas; Enders, Achim; Nunes, Rafael R.; Oertel, Carl-Henrik

    2016-09-01

    The ever increasing use of PEDs (passenger or portable electronic devices) has put pressure on the aircraft industry as well as operators and administrations to reevaluate established restrictions in PED-use on airplanes in the last years. Any electronic device could cause electromagnetic interference to the electronics of the airplane, especially interference at receiving antennas of sensitive wireless navigation and communication (NAV/COM) systems. This paper presents a measurement campaign in an Airbus A320. 69 test passengers were asked to actively use a combination of about 150 electronic devices including many attached cables, preferentially with a high data load on their buses, to provoke maximal emissions. These emissions were analysed within the cabin as well as at the inputs of aircraft receiving antennas outside of the fuselage. The emissions of the electronic devices as well as the background noise are time-variant, so just comparing only one reference and one transmission measurement is not sufficient. Repeated measurements of both cases lead to a more reliable first analysis. Additional measurements of the absolute received power at the antennas of the airplane allow a good estimation of the real interference potential to aircraft NAV/COM systems. Although there were many measured emissions within the cabin, there were no disturbance signals detectable at the aircraft antennas.

  15. Evaluation test of the energy monitoring device in industrial electron beam facilities

    NASA Astrophysics Data System (ADS)

    Fuochi, P. G.; Lavalle, M.; Martelli, A.; Corda, U.; Cornia, G.; Kovács, A.

    2009-07-01

    The electron beam energy monitoring device, previously developed and tested under standard laboratory conditions using electron beams in the energy range 4-12 MeV, has now been tested under industrial irradiation conditions in high-energy, high-power electron beam facilities. The measuring instrument was improved in order to measure high peak current delivered at low pulse repetition rate as well. Tests, with good results, were carried out at two different EB plants: one equipped with a LUE-8 linear electron accelerator of 7 MeV maximum energy used for cross-linking of cables and for medical device sterilization, and the other with a 10 MeV Rhodotron type TT 100 used for in-house sterilization.

  16. Designing electronic anisotropy of three-dimensional carbon allotropes for the all-carbon device

    SciTech Connect

    Xu, Li-Chun Song, Xian-Jiang; Yang, Zhi; Li, Xiu-Yan; Wang, Ru-Zhi; Yan, Hui

    2015-07-13

    Extending two-dimensional (2D) graphene nanosheets to a three-dimensional (3D) network can enhance the design of all-carbon electronic devices. Based on the great diversity of carbon atomic bonding, we have constructed four superlattice-type carbon allotrope candidates, containing sp{sup 2}-bonding transport channels and sp{sup 3}-bonding insulating layers, using density functional theory. It was demonstrated through systematic simulations that the ultra-thin insulating layer with only three-atom thickness can switch off the tunneling transport and isolate the electronic connection between the adjacent graphene strips, and these alternating perpendicular strips also extend the electron road from 2D to 3D. Designing electronic anisotropy originates from the mutually perpendicular π bonds and the rare partial charge density of the corresponding carriers in insulating layers. Our results indicate the possibility of producing custom-designed 3D all-carbon devices with building blocks of graphene and diamond.

  17. On the macroscopic quantization in mesoscopic rings and single-electron devices

    NASA Astrophysics Data System (ADS)

    Semenov, Andrew G.

    2016-05-01

    In this letter we investigate the phenomenon of macroscopic quantization and consider particle on the ring interacting with the dissipative bath as an example. We demonstrate that even in presence of environment, there is macroscopically quantized observable which can take only integer values in the zero temperature limit. This fact follows from the total angular momentum conservation combined with momentum quantization for bare particle on the ring. The nontrivial thing is that the model under consideration, including the notion of quantized observable, can be mapped onto the Ambegaokar-Eckern-Schon model of the single-electron box (SEB). We evaluate SEB observable, originating after mapping, and reveal new physics, which follows from the macroscopic quantization phenomenon and the existence of additional conservation law. Some generalizations of the obtained results are also presented.

  18. Using Wireless Power Meters to Measure Energy Use of Miscellaneous and Electronic Devices in Buildings

    SciTech Connect

    UC Berkeley, Berkeley, CA USA; Brown, Richard; Lanzisera, Steven; Cheung, Hoi Ying; Lai, Judy; Jiang, Xiaofan; Dawson-Haggerty, Stephen; Taneja, Jay; Ortiz, Jorge; Culler, David

    2011-05-24

    Miscellaneous and electronic devices consume about one-third of the primary energy used in U.S. buildings, and their energy use is increasing faster than other end-uses. Despite the success of policies, such as Energy Star, that promote more efficient miscellaneous and electronic products, much remains to be done to address the energy use of these devices if we are to achieve our energy and carbon reduction goals. Developing efficiency strategies for these products depends on better data about their actual usage, but very few studies have collected field data on the long-term energy used by a large sample of devices due to the difficulty and expense of collecting device-level energy data. This paper describes the development of an improved method for collecting device-level energy and power data using small, relatively inexpensive wireless power meters. These meters form a mesh network based on Internet standard protocols and can form networks of hundreds of metering points in a single building. Because the meters are relatively inexpensive and do not require manual data downloading, they can be left in the field for months or years to collect long time-series energy use data. In addition to the metering technology, we also describe a field protocol used to collect comprehensive, robust data on the miscellaneous and electronic devices in a building. The paper presents sample results from several case study buildings, in which all the plug-in devices for several homes were metered, and a representative sample of several hundred plug-in devices in a commercial office building were metered for several months.

  19. Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

    NASA Astrophysics Data System (ADS)

    Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

    2016-08-01

    Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

  20. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

    SciTech Connect

    Mueller, Knut; Rosenauer, Andreas; Ryll, Henning; Ordavo, Ivan; Ihle, Sebastian; Soltau, Heike; Strueder, Lothar; Volz, Kerstin; Zweck, Josef

    2012-11-19

    A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1.3 Multiplication-Sign 10{sup -3}, enabling, e.g., strain mapping in a 100 Multiplication-Sign 100 nm{sup 2} region with 0.5 nm resolution in 40 s.

  1. Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

    NASA Astrophysics Data System (ADS)

    Müller, Knut; Ryll, Henning; Ordavo, Ivan; Ihle, Sebastian; Strüder, Lothar; Volz, Kerstin; Zweck, Josef; Soltau, Heike; Rosenauer, Andreas

    2012-11-01

    A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a scintillator-free direct electron detector with a frame time of 1 ms. We show that the applied algorithms can accurately detect Bragg beam positions despite a significant point spread each 300 kV electron causes during detection on the scintillator-free camera. For millisecond exposures, we find that strain can be measured with a precision of 1.3 × 10-3, enabling, e.g., strain mapping in a 100×100 nm2 region with 0.5 nm resolution in 40 s.

  2. Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

    NASA Astrophysics Data System (ADS)

    Gamzina, Diana

    Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

  3. 78 FR 71643 - Certain Wireless Consumer Electronics Devices and Components Thereof; Commission Determination To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-29

    ... (collectively ``Complainants''). 77 FR 51572-573 (August 24, 2012). The complaint alleges violations of section... 21, 2005, 70 FR 43251 (July 26, 2005). During this period, the subject articles would be entitled to... COMMISSION Certain Wireless Consumer Electronics Devices and Components Thereof; Commission Determination...

  4. 76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-29

    ... Music Players, and Computers, and Components Thereof; Notice of Institution of Investigation AGENCY: U.S... tablets, portable music players, and computers, and components thereof by reason of infringement of... importation of certain electronic devices, including mobile phones, mobile tablets, portable music...

  5. 76 FR 55944 - In the Matter of Certain Electronic Devices With Image Processing Systems, Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-09

    ... filed by S3 Graphics Co. Ltd. and S3 Graphics Inc. (collectively, ``S3G''). 75 FR 38118 (July 1, 2010... 21, 2005, 70 FR 43251 (July 26, 2005). During this period, the subject articles would be entitled to... COMMISSION In the Matter of Certain Electronic Devices With Image Processing Systems, Components Thereof,...

  6. 77 FR 4059 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof; Receipt...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-26

    ... COMMISSION Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof; Receipt... Images, and Components Thereof, DN 2869; the Commission is soliciting comments on any public interest... for capturing and transmitting images, and components thereof. The complaint names Apple Inc....

  7. 78 FR 16531 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-15

    ... Eastman Kodak Company of Rochester, New York. 77 FR 11588-89 (Feb. 27, 2012). The complaint alleges a... COMMISSION Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof... images, and components thereof. The complaint further alleges that an industry in the United...

  8. 77 FR 24513 - Certain Electronic Devices Having a Retractable USB Connector; Notice of Receipt of Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-24

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having a Retractable USB Connector; Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest AGENCY: U.S. International Trade Commission....

  9. 77 FR 20847 - Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-06

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

  10. 78 FR 22899 - Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-17

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Electronic Devices Having Placeshifting or Display Replication Functionality and Products Containing Same; Institution of investigation pursuant to 19 U.S.C. 1337 AGENCY: U.S. International...

  11. 77 FR 68828 - Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-16

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Cases for Portable Electronic Devices; Institution of Investigation Pursuant to the Tariff Act of 1930, as Amended AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY:...

  12. 76 FR 60870 - In the Matter of Certain Electronic Devices With Communication Capabilities, Components Thereof...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-30

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION In the Matter of Certain Electronic Devices With Communication Capabilities, Components Thereof... 19 U.S.C. 1337 AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

  13. Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

    NASA Astrophysics Data System (ADS)

    Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

    2014-12-01

    Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

  14. Electronic interconnects and devices with topological surface states and methods for fabricating same

    DOEpatents

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  15. Electronic Device of Didactic and Electrometric Interest for the Study of RLC Circuits.

    ERIC Educational Resources Information Center

    Rodriguez, Angel L. Perez; And Others

    1979-01-01

    Presents a method of studying RLC circuits with the help of the oscilloscope in the XYZ mode, complemented by an electronic device which generates a marker-trace on the screen and which is used to measure frequencies without the need of a reference point on the screen. (Author/GA)

  16. 77 FR 11588 - Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-27

    ... COMMISSION Certain Electronic Devices for Capturing and Transmitting Images, and Components Thereof AGENCY: U... capturing and transmitting images and components thereof by reason of infringement of certain claims of U.S... capturing and transmitting images and components thereof by reason of infringement of one or more of...

  17. 75 FR 39971 - In the Matter of Certain Electronic Imaging Devices; Notice of Investigation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-13

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION In the Matter of Certain Electronic Imaging Devices; Notice of Investigation AGENCY: U.S... that information on this matter can be obtained by contacting the Commission's TDD terminal on...

  18. Subterahertz acoustical pumping of electronic charge in a resonant tunneling device.

    PubMed

    Young, E S K; Akimov, A V; Henini, M; Eaves, L; Kent, A J

    2012-06-01

    We demonstrate that controlled subnanosecond bursts of electronic charge can be transferred through a resonant tunneling diode by successive picosecond acoustic pulses. The effect exploits the nonlinear current-voltage characteristics of the device and its asymmetric response to the compressive and tensile components of the strain pulse. This acoustoelectronic pump opens new possibilities for the control of quantum phenomena in nanostructures. PMID:23003634

  19. Five Ways to Hack and Cheat with Bring-Your-Own-Device Electronic Examinations

    ERIC Educational Resources Information Center

    Dawson, Phillip

    2016-01-01

    Bring-your-own-device electronic examinations (BYOD e-exams) are a relatively new type of assessment where students sit an in-person exam under invigilated conditions with their own laptop. Special software restricts student access to prohibited computer functions and files, and provides access to any resources or software the examiner approves.…

  20. 77 FR 31876 - Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-30

    ... COMMISSION Certain Consumer Electronics and Display Devices and Products Containing Same Determination Not To... correct the name of respondent Sony Ericsson Mobile Communications AB to Sony Mobile Communications AB; to correct the name of respondent Sony Ericsson Mobile Communications, Inc. to Sony Mobile...

  1. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    SciTech Connect

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish

    2015-09-28

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.

  2. Bi-directional magnetic resonance based wireless power transfer for electronic devices

    NASA Astrophysics Data System (ADS)

    Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan; Mishra, Debasish

    2015-09-01

    In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84% in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.

  3. TASER(®) Electronic Control Device-Induced Rhabdomyolysis and Renal Failure: A Case Report.

    PubMed

    Gleason, James Benjamin; Ahmad, Ibrahim

    2015-10-01

    Many law enforcement agencies around the United States are employing the use of TASER(®) electronic control devices (TASER(®) International Inc.) to subdue combative suspects. Since its inception the TASER(®) has had a temporal association with reports of rhabdomyolysis. Case reports have reported TASER(®) induced rhabdomyolysis as mild but serious cases have also been reported. Herein we present the case of a single patient who was admitted to our health network with severe rhabdomyolysis after receiving TASER(®) shocks and review the pertinent literature. No direct link has been established between clinically significant rhabdomyolysis and TASER(®) device application but this case serves as an example of a sparsely documented but serious complication that may occur in patients who are at risk for restraint by an electronic control device. PMID:26557540

  4. Plasmonic and electronic device-based integrated circuits and their characteristics

    NASA Astrophysics Data System (ADS)

    Sakai, H.; Okahisa, S.; Nakayama, Y.; Nakayama, K.; Fukuhara, M.; Kimura, Y.; Ishii, Y.; Fukuda, M.

    2016-11-01

    This paper presents a plasmonic circuit that has been monolithically integrated with electronic devices on a silicon substrate and then discusses the concept behind this circuit. To form the proposed circuit, two plasmonic waveguides and a detector are integrated with metal-oxide-semiconductor field-effect transistors (MOSFETs) on the substrate. In the circuit, intensity signals or coherent plasmonic signals are generated by coherent light at an operating wavelength at which silicon is transparent, and these signals propagate along the waveguides before they are converted into electrical signals by the detector. These electrical intensity and coherent signals then drive the MOSFETs during both DC and AC operation. The measured performances of the devices indicate that surface plasmon polaritons propagate on the metal surface at the speed of light and drive the electronic devices without any absorption in the silicon.

  5. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    PubMed Central

    Iovan, Adrian; Fischer, Marco; Lo Conte, Roberto

    2012-01-01

    Summary Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths. PMID:23365801

  6. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices.

    PubMed

    Iovan, Adrian; Fischer, Marco; Lo Conte, Roberto; Korenivski, Vladislav

    2012-01-01

    Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  7. Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices

    NASA Astrophysics Data System (ADS)

    Do, Van-Nam

    2014-09-01

    We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nano-scale devices and low-dimensional materials. Concretely, we present the definition of the four real-time Green functions, the retarded, advanced, lesser and greater functions. Basic relations among these functions and their equations of motion are also presented in detail as the basis for the performance of analytical and numerical calculations. In particular, we review in detail two recursive algorithms, which are implemented in OPEDEVS to solve the Green functions defined in finite-size opened systems and in the surface layer of semi-infinite homogeneous ones. Operation of the package is then illustrated through the simulation of the transport characteristics of a typical semiconductor device structure, the resonant tunneling diodes.

  8. Fabrication and test of digital output interface devices for gas turbine electronic controls

    NASA Technical Reports Server (NTRS)

    Newirth, D. M.; Koenig, E. W.

    1978-01-01

    A program was conducted to develop an innovative digital output interface device, a digital effector with optical feedback of the fuel metering valve position, for future electronic controls for gas turbine engines. A digital effector (on-off solenoids driven directly by on-off signals from a digital electronic controller) with optical position feedback was fabricated, coupled with the fuel metering valve, and tested under simulated engine operating conditions. The testing indicated that a digital effector with optical position feedback is a suitable candidate, with proper development for future digital electronic gas turbine controls. The testing also identified several problem areas which would have to be overcome in a final production configuration.

  9. Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication

    NASA Astrophysics Data System (ADS)

    Jin, Michael Sungchun

    Various forms of optical computing architectures have promised enhanced processing capabilities well beyond the limits of traditional VLSI technology during the past decade. However, the progress toward realizing this vision has been severely limited by the lack of mature technology to fabricate heterogeneously integrated optoelectronic transceiver arrays (consisting of VLSI electronics with optoelectronic devices) that are necessary to link the functionality of photonic input/output devices with electronic processors. This dissertation describes a research effort that addressed this need by exploring innovative, yet highly manufacturable integration approaches that can be utilized to fabricate hybrid optoelectronic transceivers by integrating thin silicon device layers on bulk electro-optic (e.g. lead lanthanum zirconate titanate- PLZT) and other host substrates. The two integration techniques developed are: (1) B& P (Bond and Processing) technology involving bonding of bulk-quality thin silicon layer to PLZT followed by low temperature NMOS processing and (2) DDB (Direct-Device Bonding) technology, where circuit layer fabricated in SOI-silicon is thinned and bonded directly to a PLZT substrate. Characteristics of electronic circuits and modulators in integrated Si/PLZT SLMs are measured to be comparable to that of reference devices fabricated in bulk silicon and PLZT substrates. The application of the developed integration technology specifically toward fabricating Si/PLZT spatial light modulator is examined in detail. The developed device layer grafting technology based on chemo-mechanical lapping and reactive ion etching processes can be applied to assemble miniature ``mixed technology'' systems consisting of devices fabricated by different manufacturing processes (e.g. CMOS, MEMS, VCSEL and GaAs processes) in a monolithic fashion. The latter half of the thesis details experimental

  10. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires.

    PubMed

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-09

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  11. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    NASA Astrophysics Data System (ADS)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  12. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    PubMed Central

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-01-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques. PMID:27279431

  13. Guidance note: risk management of workers with medical electronic devices and metallic implants in electromagnetic fields.

    PubMed

    Hocking, Bruce; Mild, Kjell Hansson

    2008-01-01

    Medical electronic devices and metallic implants are found in an increasing number of workers. Industrial applications requiring intense electromagnetic fields (EMF) are growing and the potential risk of injurious interactions arising from EMF affecting devices or implants needs to be managed. Potential interactions include electromagnetic interference, displacement, and electrostimulation or heating of adjacent tissue, depending on the device or implant and the frequency of the fields. A guidance note, which uses a risk management framework, has been developed to give generic advice in (a) risk identification--implementing procedures to identify workers with implants and to characterise EMF exposure within a workplace; (b) risk assessment--integrating the characteristics of devices, the anatomical localisation of implants, occupational hygiene data, and application of basic physics principles; and (c) risk control--advising the worker and employer regarding safety and any necessary changes to work practices, while observing privacy.

  14. Multiscale examination and modeling of electron transport in nanoscale materials and devices

    NASA Astrophysics Data System (ADS)

    Banyai, Douglas R.

    For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) in use today. Several new transistor designs, some designed and built here at Michigan Tech, involve electrons tunneling their way through arrays of nanoparticles. We use a multi-scale approach to model these devices and study their behavior. For investigating the tunneling characteristics of the individual junctions, we use a first-principles approach to model conduction between sub-nanometer gold particles. To estimate the change in energy due to the movement of individual electrons, we use the finite element method to calculate electrostatic capacitances. The kinetic Monte Carlo method allows us to use our knowledge of these details to simulate the dynamics of an entire device---sometimes consisting of hundreds of individual particles---and watch as a device 'turns on' and starts conducting an electric current. Scanning tunneling microscopy (STM) and the closely related scanning tunneling spectroscopy (STS) are a family of powerful experimental techniques that allow for the probing and imaging of surfaces and molecules at atomic resolution. However, interpretation of the results often requires comparison with theoretical and computational models. We have developed a new method for calculating STM topographs and STS spectra. This method combines an established method for approximating the

  15. Innovative, wearable snap connector technology for improved device networking in electronic garments

    NASA Astrophysics Data System (ADS)

    Kostrzewski, Andrew A.; Lee, Kang S.; Gans, Eric; Winterhalter, Carole A.; Jannson, Tomasz P.

    2007-04-01

    This paper discusses Physical Optics Corporation's (POC) wearable snap connector technology that provides for the transfer of data and power throughout an electronic garment (e-garment). These connectors resemble a standard garment button and can be mated blindly with only one hand. Fully compatible with military clothing, their application allows for the networking of multiple electronic devices and an intuitive method for adding/removing existing components from the system. The attached flexible cabling also permits the rugged snap connectors to be fed throughout the standard webbing found in military garments permitting placement in any location within the uniform. Variations of the snap electronics/geometry allow for integration with USB 2.0 devices, RF antennas, and are capable of transferring high bandwidth data streams such as the 221 Mbps required for VGA video. With the trend towards providing military officers with numerous electronic devices (i.e., heads up displays (HMD), GPS receiver, PDA, etc), POC's snap connector technology will greatly improve cable management resulting in a less cumbersome uniform. In addition, with electronic garments gaining widespread adoption in the commercial marketplace, POC's technology is finding applications in such areas as sporting good manufacturers and video game technology.

  16. Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

    PubMed

    Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

    2015-05-26

    Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

  17. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

    SciTech Connect

    Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

    2015-04-06

    MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

  18. Using electronic monitoring devices to measure inhaler adherence: a practical guide for clinicians.

    PubMed

    Chan, Amy Hai Yan; Harrison, Jeff; Black, Peter N; Mitchell, Edwin A; Foster, Juliet M

    2015-01-01

    Use of electronic monitoring devices (EMDs) for inhalers is growing rapidly because of their ability to provide objective and detailed adherence data to support clinical decision making. There is increasing potential for the use of EMDs in clinical settings, especially as cost-effectiveness is realized and device costs reduce. However, it is important for clinicians to know about the attributes of different EMDs so that they can select the right device for their patients and understand the factors that affect the reliability and accuracy of the data EMDs record. This article gives information on where to obtain EMDs, describes device specifications, and highlights useful features for the clinician and the patient, including user feedback data. We discuss the benefits and potential drawbacks of data collected by EMDs and provide device users with a set of tools to optimize the use of EMDs in clinical settings, such as advice on how to carry out brief EMD checks to ensure data quality and device reliability. New EMDs on the market require pretesting before use by patients. We provide information on how to carry out EMD pretesting in the clinic and patients' homes, which can be carried out by health professionals or in collaboration with researchers or manufacturers. Strategies for interpreting and managing common device malfunctions are also discussed.

  19. Using electronic monitoring devices to measure inhaler adherence: a practical guide for clinicians.

    PubMed

    Chan, Amy Hai Yan; Harrison, Jeff; Black, Peter N; Mitchell, Edwin A; Foster, Juliet M

    2015-01-01

    Use of electronic monitoring devices (EMDs) for inhalers is growing rapidly because of their ability to provide objective and detailed adherence data to support clinical decision making. There is increasing potential for the use of EMDs in clinical settings, especially as cost-effectiveness is realized and device costs reduce. However, it is important for clinicians to know about the attributes of different EMDs so that they can select the right device for their patients and understand the factors that affect the reliability and accuracy of the data EMDs record. This article gives information on where to obtain EMDs, describes device specifications, and highlights useful features for the clinician and the patient, including user feedback data. We discuss the benefits and potential drawbacks of data collected by EMDs and provide device users with a set of tools to optimize the use of EMDs in clinical settings, such as advice on how to carry out brief EMD checks to ensure data quality and device reliability. New EMDs on the market require pretesting before use by patients. We provide information on how to carry out EMD pretesting in the clinic and patients' homes, which can be carried out by health professionals or in collaboration with researchers or manufacturers. Strategies for interpreting and managing common device malfunctions are also discussed. PMID:25840665

  20. Device and method for electron beam heating of a high density plasma

    DOEpatents

    Thode, Lester E.

    1981-01-01

    A device and method for relativistic electron beam heating of a high density plasma in a small localized region. A relativistic electron beam generator produces a high voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high density target plasma which typically comprises DT, DD, hydrogen boron or similar thermonuclear gas at a density of 10.sup.17 to 10.sup.20 electrons per cubic centimeter. The target plasma is ionized prior to application of the electron beam by means of a laser or other preionization source. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 MeV, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high density target plasma causing the relativistic electron beam to efficiently deposit its energy into a small localized region within the high density plasma target.

  1. Low-Energy Plasma Focus Device as an Electron Beam Source

    PubMed Central

    Seong Ling, Yap; Naresh Kumar, Nitturi; Lian Kuang, Lim; Chiow San, Wong

    2014-01-01

    A low-energy plasma focus device was used as an electron beam source. A technique was developed to simultaneously measure the electron beam intensity and energy. The system was operated in Argon filling at an optimum pressure of 1.7 mbar. A Faraday cup was used together with an array of filtered PIN diodes. The beam-target X-rays were registered through X-ray spectrometry. Copper and lead line radiations were registered upon usage as targets. The maximum electron beam charge and density were estimated to be 0.31 μC and 13.5 × 1016/m3, respectively. The average energy of the electron beam was 500 keV. The high flux of the electron beam can be potentially applicable in material sciences. PMID:25544952

  2. Studies of two-dimensional electron and superconducting vortex systems using hybrid devices

    NASA Astrophysics Data System (ADS)

    Farina, Lee Adrienne

    Hybrid devices that combine two-dimensional electron systems in GaAs/AlGaAs heterostructures with Al thin films or Al/AlOx/Al tunnel junctions can provide unique tools for the study of the collective behavior of electrons. We present the study two aspects of low-dimensional physics using hybrid devices. An Al/AlOx/Al single electron transistor is used to monitor the properties of a two-dimensional electron gas in a high magnetic field (1-11 Tesla) at low temperatures (15 mK--280 mK). The single electron transistor measures properties of the deep insulating regime of the integer quantum Hall liquid (between Landau levels) which cannot be probed via other methods. We monitor in real time the motion of charge carriers in the quantum Hall liquid after small changes in magnetic field or back gate voltage. The behavior after an increase in magnetic field is found to be identical to that after a change in back gate voltage. Systematic study of this effect in the nu = 2 plateau shows that two electrons accumulate in the bulk for each flux quanta added to the system. An etched antidot (< 1 mum) under the single electron transistor has the small but clear effect of additional charging around the antidot after an increase in magnetic field. The slow equilibration (> 1 hour) in the nu = 2 plateau provides a new method of measuring the extremely low conductivity of the bulk (10-19 - 10-18 1/O). We also studied the superconducting transition of an Al thin film at zero magnetic field using a bilayer device consisting of a thin Al film and a two-dimensional electron gas. By modulating the resistance of the two-dimensional electron gas we are able to measurably vary the dissipation in the Al due to eddy current coupling of the superconducting vortices to the two-dimensional electron gas. The temperature dependence of this effect indicates the presence of thermally excited vortices below Tc. Drag measurements are also performed on this device. We find that radio

  3. Rapid fabrication of Al2O3 encapsulations for organic electronic devices

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Ali, Junaid; Mehdi, Syed Murtuza; Choi, Kyung-Hyun; An, Young Jin

    2015-10-01

    Organic electronics have earned great reputation in electronic industry yet they suffer technical challenges such as short lifetimes and low reliability because of their susceptibility to water vapor and oxygen which causes their fast degradation. This paper report on the rapid fabrication of Al2O3 encapsulations through a unique roll-to-roll atmospheric atomic layer deposition technology (R2R-AALD) for the life time enhancement of organic poly (4-vinylphenol) (PVP) memristor devices. The devices were then categorized into two sets. One was processed with R2R-AALD Al2O3 encapsulations at 50 °C and the other one was kept as un-encapsulated. The field-emission scanning electron microscopy (FESEM) results revealed that pin holes and other irregularities in PVP films with average arithmetic roughness (Ra) of 9.66 nm have been effectively covered by Al2O3 encapsulation having Ra of 0.92 nm. The X-ray photoelectron spectroscopy XPS spectrum for PVP film showed peaks of C 1s and O 1s at the binding energies of 285 eV and 531 eV, respectively. The respective appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, confirms the fabrication of Al2O3 films. Electrical current-voltage (I-V) measurements confirmed that the Al2O3 encapsulation has a huge influence on the performance, robustness and life time of memristor devices. The Al2O3 encapsulated memristor performed with superior stability for four weeks whereas the un-encapsulated devices could only last for one week. The performance of encapsulated device had been promising after being subjected to bending test for 100 cycles and the variations in its stability were of minor concern confirming the mechanical robustness and flexibility of the devices.

  4. Energy monitoring device for 1.5-2.4 MeV electron beams

    NASA Astrophysics Data System (ADS)

    Fuochi, P. G.; Lavalle, M.; Martelli, A.; Kovács, A.; Mehta, K.; Kuntz, F.; Plumeri, S.

    2010-03-01

    An easy-to-use and robust energy monitoring device has been developed for reliable detection of day-to-day small variations in the electron beam energy, a critical parameter for quality control and quality assurance in industrial radiation processing. It has potential for using on-line, thus providing real-time information. Its working principle is based on the measurement of currents, or charges, collected by two aluminium absorbers of specific thicknesses (dependent on the beam energy), insulated from each other and positioned within a faraday cup-style aluminium cage connected to the ground. The device has been extensively tested in the energy range of 4-12 MeV under standard laboratory conditions at Institute of Isotopes and CNR-ISOF using different types of electron accelerators; namely, a TESLA LPR-4 LINAC (3-6 MeV) and a L-band Vickers LINAC (7-12 MeV), respectively. This device has been also tested in high power electron beam radiation processing facilities, one equipped with a 7-MeV LUE-8 linear accelerator used for crosslinking of cables and medical device sterilization, and the other equipped with a 10 MeV Rhodotron TT100 recirculating accelerator used for in-house sterilization of medical devices. In the present work, we have extended the application of this method to still lower energy region, i.e. from 1.5 to 2.4 MeV. Also, we show that such a device is capable of detecting deviation in the beam energy as small as 40 keV.

  5. Direct Electronic Property Imaging of a Nanocrystal-Based Photovoltaic Device by Electron Beam-Induced Current via Scanning Electron Microscopy.

    PubMed

    Ng, Amy; Poplawsky, Jonathan D; Li, Chen; Pennycook, Stephen J; Rosenthal, Sandra J

    2014-03-01

    Scanning electron microscopy (SEM) electron beam-induced current (EBIC) studies were performed on the cross-section of a nanocrystal-based hybrid bulk heterojunction photovoltaic device. Using these techniques, the short circuit carrier collection efficiencies are mapped with a better than 100 nm resolution. Electronically deficient and proficient regions within the photoactive layer are determined. The results show that only a fraction of the CdSe nanorod:P3HT layer (P3HT = poly-3(hexylthiophene)) at the Al cathode interface shows primary collection of charged carriers, in which the photoactivity decreases exponentially away from the interface. The recombination losses of the photoactive layer away from this interface prove that the limiting factor of the device is the inability for electrons to percolate between nanoparticles; to alleviate this problem, an interparticle network that conducts the electrons from one nanorod to the next must be established. Furthermore, the EBIC technique applied to the nanocrystalline device used in this study is the first measurement of its kind and can be applied toward other similar architectures.

  6. DNA-based high-density memory devices and biomolecular electronics at CSIO

    NASA Astrophysics Data System (ADS)

    Bharadwaj, Lalit M.; Bhondekar, Amol P.; Shukla, A. K.; Bhalla, Vijayender; Bajpai, Ram P.

    2002-11-01

    During the last half century the electronic components and computers have grown more and more powerful with the shrinking dimensions of transistors which is approaching 100nm with about a billion tiny devices working together on a single processor. The laws of quantum mechanics and limitations of materials and fabrication techniques restrict further reduction below 100nm. The most promising area is Biomolecular Electronics concerning design and fabrication of basic electronic components using biomolecules. Various organic polymers are being studied for visualization of individual molecular electronic wires and diode switches but we see enormous potential in use of DNA for such devices due to its inherent characteristics. This is because DNA can act as insulator semiconductor, conductor or superconductor depending upon the base sequence, length and orientation. The DNA can be coated selectively with metals with molecular level precision giving us capability to design molecular electronic components, such as, diode, triode, transistor, etc. This paper discusses the DNA based language developed by our group for coding and decoding any digital information in terms of DNA sequence. Basic arithmetical operations, such as, addition subtraction, multiplication, division and exponential have been defined in terms of DNA sequence and their validity has been demonstrated. Paper will also discuss our programme on study of DNA electrical behaviour in terms of sequence; length and orientation for development of biomolecular electronic components and for understanding DNA damaged chemistry.

  7. Inelastic Electron Tunneling Spectroscopy in Molecular Electronic Devices from First-Principles

    NASA Astrophysics Data System (ADS)

    Ji, Tao

    In this thesis, we present the first-principle calculations of inelastic electron tunneling spectroscopy(IETS) in single molecular break junctions. In a two-probe electrode-molecule-electrode setup, density functional theory(DFT) is used for the construction of the Hamiltonian and the Keldysh non-equilibrium Green's function(NEGF) technique will be employed for determining the electron density in non-equilibrium system conditions. Total energy functional, atomic forces and Hessian matrix can be obtained in the DFT-NEGF formalism and self-consistent Born approximation(SCBA) is used to integrate the molecular vibrations (phonons) into the framework once the phonon spectra and eigenvectors are calculated from the dynamic matrix. Geometry optimization schemes will also be discussed as an indispensable part of the formalism as the equilibrium condition is crucial to correctly calculate the phonon properties of the system. To overcome the numerical difficulties, especially the large computational time demand of the electron-phonon coupling problem, we develop a numerical approximation for the electron self-energy due to phonons and the error is controlled within numerical precision. Besides, a direct IETS second order I-V derivative expression is derived to reduce the error of numerical differentiation under reasonable assumptions. These two approximations greatly reduce the computation requirement and make the calculation feasible within current numerical capability. As the application of the DFT-NEGF-SCBA formalism, we calculate the IETS of the gold-octanedithiol(ODT) molecular junction. The I-V curve, conductance and IETS from ab-inito calculations are compared directly to experiments. A microscopic understanding of the electron-phonon coupling mechanism in the molecular tunneling junctions is explained in this example. In addition, comparisons of the hydrogen-dissociative and hydrogen-non-dissociative ODT junctions as well as the different charge transfer behaviors

  8. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

    NASA Astrophysics Data System (ADS)

    Park, J.; Ahn, Y.; Tilka, J. A.; Sampson, K. C.; Savage, D. E.; Prance, J. R.; Simmons, C. B.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Holt, M. V.; Evans, P. G.

    2016-06-01

    Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

  9. Silicon electronics on silk as a path to bioresorbable, implantable devices.

    PubMed

    Kim, Dae-Hyeong; Kim, Yun-Soung; Amsden, Jason; Panilaitis, Bruce; Kaplan, David L; Omenetto, Fiorenzo G; Zakin, Mitchell R; Rogers, John A

    2009-09-28

    Many existing and envisioned classes of implantable biomedical devices require high performance electronicssensors. An approach that avoids some of the longer term challenges in biocompatibility involves a construction in which some parts or all of the system resorbs in the body over time. This paper describes strategies for integrating single crystalline silicon electronics, where the silicon is in the form of nanomembranes, onto water soluble and biocompatible silk substrates. Electrical, bending, water dissolution, and animal toxicity studies suggest that this approach might provide many opportunities for future biomedical devices and clinical applications. PMID:20145699

  10. Silicon electronics on silk as a path to bioresorbable, implantable devices

    PubMed Central

    Kim, Dae-Hyeong; Kim, Yun-Soung; Amsden, Jason; Panilaitis, Bruce; Kaplan, David L.; Omenetto, Fiorenzo G.; Zakin, Mitchell R.; Rogers, John A.

    2009-01-01

    Many existing and envisioned classes of implantable biomedical devices require high performance electronics∕sensors. An approach that avoids some of the longer term challenges in biocompatibility involves a construction in which some parts or all of the system resorbs in the body over time. This paper describes strategies for integrating single crystalline silicon electronics, where the silicon is in the form of nanomembranes, onto water soluble and biocompatible silk substrates. Electrical, bending, water dissolution, and animal toxicity studies suggest that this approach might provide many opportunities for future biomedical devices and clinical applications. PMID:20145699

  11. Potential resource and toxicity impacts from metals in waste electronic devices.

    PubMed

    Woo, Seung H; Lee, Dae Sung; Lim, Seong-Rin

    2016-04-01

    As a result of the continuous release of new electronic devices, existing electronic devices are quickly made obsolete and rapidly become electronic waste (e-waste). Because e-waste contains a variety of metals, information about those metals with the potential for substantial environmental impact should be provided to manufacturers, recyclers, and disposers to proactively reduce this impact. This study assesses the resource and toxicity (i.e., cancer, noncancer, and ecotoxicity) potentials of various heavy metals commonly found in e-waste from laptop computers, liquid-crystal display (LCD) monitors, LCD TVs, plasma TVs, color cathode ray tube (CRT) TVs, and cell phones and then evaluates such potentials using life cycle impact-based methods. Resource potentials derive primarily from Cu, Sb, Ag, and Pb. Toxicity potentials derive primarily from Pb, Ni, and Hg for cancer toxicity; from Pb, Hg, Zn, and As for noncancer toxicity; and from Cu, Pb, Hg, and Zn for ecotoxicity. Therefore, managing these heavy metals should be a high priority in the design, recycling, and disposal stages of electronic devices.

  12. Potential resource and toxicity impacts from metals in waste electronic devices.

    PubMed

    Woo, Seung H; Lee, Dae Sung; Lim, Seong-Rin

    2016-04-01

    As a result of the continuous release of new electronic devices, existing electronic devices are quickly made obsolete and rapidly become electronic waste (e-waste). Because e-waste contains a variety of metals, information about those metals with the potential for substantial environmental impact should be provided to manufacturers, recyclers, and disposers to proactively reduce this impact. This study assesses the resource and toxicity (i.e., cancer, noncancer, and ecotoxicity) potentials of various heavy metals commonly found in e-waste from laptop computers, liquid-crystal display (LCD) monitors, LCD TVs, plasma TVs, color cathode ray tube (CRT) TVs, and cell phones and then evaluates such potentials using life cycle impact-based methods. Resource potentials derive primarily from Cu, Sb, Ag, and Pb. Toxicity potentials derive primarily from Pb, Ni, and Hg for cancer toxicity; from Pb, Hg, Zn, and As for noncancer toxicity; and from Cu, Pb, Hg, and Zn for ecotoxicity. Therefore, managing these heavy metals should be a high priority in the design, recycling, and disposal stages of electronic devices. PMID:27017840

  13. Electronic and Vibrational Properties of Low-Dimensional Heterogeneous Systems: Materials and Device Perspectives

    NASA Astrophysics Data System (ADS)

    Neupane, Mahesh Raj

    Due to the aggressive miniaturization of memory and logic devices, the current technologies based on silicon have nearly reached their ultimate size limit. One method to maintain the trend in device scaling observed by Moore's law is to create a heterostructure from existing materials and utilize the underlying electronic and optical properties. Another radical approach is the conceptualization of a new device design paradigm. The central objective of this thesis is to use both of these approaches to address issues associated with the aggressive scaling of memory and logic devices such as leakage current, leakage power, and minimizing gate oxide thickness and threshold voltage. In the first part of the dissertation, an atomistic, empirical tight binding method was used to perform a systematic investigation of the effect of physical (shape and size), and material dependent (heterogenity and strain) properties on the device related electronic and optical properties of the Germanium (Ge)/Silicon (Si) nanocrystal (NC) or quantum dot (QD). The device parameters pertaining to Ge-core/Si-shell NC-based floating gate memory and optical devices such as confinement energy, retention lifetimes and optical intensities are captured and analyzed. For both the memory and optical device applications, regardless of the shape and size, the Ge-core is found to play an important role in modifying the confinement energy and carrier dynamics. However, the variation in the thickness of outer Si-shell layer had no or minimal effect on the overall device parameters. In the second part of the dissertation, we present a systematic study of the effect of atomistic heterogeneity on the vibrational properties of quasi-2D systems and recently discovered 2D materials such as graphene, while investigating their applicabilities in future devices applications. At first, we investigate the vibrational properties of an experimentally observed misoriented bilayer graphene (MBG) system, a

  14. The Impact of Electronic Mobility Devices for Persons Who Are Visually Impaired: A Systematic Review of Effects and Effectiveness

    ERIC Educational Resources Information Center

    Roentgen, Uta R.; Gelderblom, Gert Jan; Soede, Mathijs; de Witte, Luc P.

    2009-01-01

    A systematic review of the international literature was conducted to investigate the effects and effectiveness of electronic mobility devices. Of the 13 studies that were reviewed, all but one demonstrated effects of the use of these devices, and generally, users evaluated the devices' functionality as beneficial. (Contains 1 table.)

  15. High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

    SciTech Connect

    Baumann, Frieder H.

    2014-06-30

    A classical method used to characterize the strain in modern semiconductor devices is nanobeam diffraction (NBD) in the transmission electron microscope. One challenge for this method lies in the fact that the smaller the beam becomes, the more difficult it becomes to analyze the resulting diffraction spot pattern. We show that a carefully designed fitting algorithm enables us to reduce the sampling area for the diffraction patterns on the camera chip dramatically (∼1/16) compared to traditional settings without significant loss of precision. The resulting lower magnification of the spot pattern permits the presence of an annular dark field detector, which in turn makes the recording of images for drift correction during NBD acquisition possible. Thus, the reduced sampling size allows acquisition of drift corrected NBD 2D strain maps of up to 3000 pixels while maintaining a precision of better than 0.07%. As an example, we show NBD strain maps of a modern field effect transistor (FET) device. A special filtering feature used in the analysis makes it is possible to measure strain in silicon devices even in the presence of other crystalline materials covering the probed area, which is important for the characterization of the next generation of devices (Fin-FETs).

  16. 76 FR 32373 - In the Matter of Certain Electronic Devices Having a Digital Television Receiver and Components...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-06

    ... COMMISSION In the Matter of Certain Electronic Devices Having a Digital Television Receiver and Components... electronic devices having a digital television receiver and components thereof that infringe one or more of... sale for importation, and the sale within the United States after importation of certain...

  17. 78 FR 75336 - Notice of Intent To Grant an Exclusive License; Aviation Devices and Electronic Components, L.L.C.

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-11

    ... Department of Navy Notice of Intent To Grant an Exclusive License; Aviation Devices and Electronic Components... hereby gives notice of its intent to grant to Aviation Devices and Electronic Components, L.L.C. located.... ADDRESSES: Written objections are to be filed with the Naval Air Warfare Center Aircraft...

  18. Legal, ethical, and procedural bases for the use of aseptic techniques to implant electronic devices

    USGS Publications Warehouse

    Mulcahy, Daniel M.

    2013-01-01

    The popularity of implanting electronic devices such as transmitters and data loggers into captive and free-ranging animals has increased greatly in the past two decades. The devices have become smaller, more reliable, and more capable (Printz 2004; Wilson and Gifford 2005; Metcalfe et al. 2012). Compared with externally mounted devices, implanted devices are largely invisible to external viewers such as tourists and predators; exist in a physically protected, thermally stable environment in mammals and birds; and greatly reduce drag and risk of entanglement. An implanted animal does not outgrow its device or attachment method as can happen with collars and harnesses, which allows young animals to be more safely equipped. However, compared with mounting external devices, implantation requires greater technical ability to perform the necessary anesthesia, analgesia, and surgery. More than 83% of publications in the 1990s that used radiotelemetry on animals assumed that there were no adverse effects on the animal (Godfrey and Bryant 2003). It is likely that some studies using implanted electronic devices have not been published due to a high level of unexpected mortality or to aberrant behavior or disappearance of the implanted animals, a phenomenon known as the “file drawer” problem (Rosenthal 1979; Scargle 2000). The near absence of such studies from the published record may be providing a false sense of security that procedures being used are more innocuous than they actually are. Similarly, authors sometimes state that it was unlikely that device implantation was problematic because study animals appeared to behave normally, or authors state that previous investigators used the same technique and saw no problems. Such statements are suppositions if no supporting data are provided or if the animals were equipped because there was no other way to follow their activity. Moreover, such suppositions ignore other adverse effects that affect behavior indirectly, and

  19. Integration of High-Purity Carbon Nanotube Solution into Electronic Devices

    NASA Astrophysics Data System (ADS)

    Tulevski, George; IBM TJ Watson Reserach Center Team

    Due to their exceptional electronic properties, carbon nanotubes (cnt) are leading candidates to be employed as channel materials in future nanoelectronic devices. A key bottleneck to realizing device integration is the sorting of carbon nanotubes, namely the isolation of high-purity, semiconducting cnt solutions. This talk will describe our efforts in using polymer-based sorting methods to isolate high-density and high-purity semiconducting cnt solutions. We explore the dependence of starting material and polymer to cnt ratio on the effectiveness of the separation. We confirm optically and electrically that the semiconducting purity is >99.99% through several thousand individual device measurements. In addition to single-cnt devices, thin-film transistors were also fabricated and tested. Due to the high purity of the solutions, device switching (~105 ION/IOFF) was observed at channel lengths below the percolation threshold (<500 nm). Operating below the percolation threshold allows for devices with much higher current densities and effective mobilities as transport is now the result of direct transport as opposed to hopping between cnts.

  20. Pilot Study of a New Adjustable Thermoplastic Mandibular Advancement Device for the Management of Obstructive Sleep Apnoea-Hypopnoea Syndrome: A Brief Research Letter

    PubMed Central

    El Ibrahimi, Mohammed; Laabouri, Mounir

    2016-01-01

    Background: Prefabricated adjustable thermoplastic mandibular advancement devices (PAT-MADs) are a practical short-term treatment for obstructive sleep apnoea-hypopnoea syndrome (OSAHS) in patients who have failed or refused continuous positive airway pressure (CPAP) therapy. Objective: To assess the effectiveness of a new professionally-fitted PAT-MAD in patients with OSAHS in Morocco. Method: Twenty-four adults with mild, moderate or severe OSAHS were fitted with the PAT-MAD (BluePro®; BlueSom, France). Respiratory parameters (apnoea-hypopnoea index (AHI), oxygen desaturation index (ODI)) and daytime sleepiness using the Epworth Sleepiness scale (ESS) were assessed before and after treatment. Adverse events were recorded. Results: Mean treatment duration was 106.3 ± 73.4 days. Mean AHI score decreased from 21.4 ± 7.4 to 9.3 ± 4.1 after treatment (p<0.0001) (mean reduction of 57.0 ± 12.3%). Mean ESS and ODI also decreased at EOS (from 10.4 ± 2.8 to 7.3 ± 2.3, mean reduction 30.3 ± 12.2%, p=0.0001; and 7.0 ± 6.9 to 4.7 ± 4.0, mean reduction 30.5 ± 25.0%, p=0.2, respectively). Treatment was considered to have been successful in 22 patients (91.7%) who had mild OSAHS or an AHI score of ≤5 at the end of the study. The device was well-tolerated. Conclusion: This new PAT-MAD appears to be effective at reducing respiratory parameters and improving daytime alertness in patients with OSAHS. Long term studies in a larger number of patients are warranted to assess the long-term efficacy, retention and side-effects of this device. PMID:27499821

  1. Two-dimensional electron-electron two-stream instability of an inertial electrostatic confinement device

    SciTech Connect

    Marocchino, A.; Lapenta, G.; Evstatiev, E. G.; Nebel, R. A.; Park, J.

    2006-10-15

    Theoretical works by Barnes and Nebel [D. C. Barnes and R. A. Nebel, Phys. Plasmas 5, 2498 (1998); R. A. Nebel and D. C. Barnes, Fusion Technol. 38, 28 (1998)] have suggested that a tiny oscillating ion cloud (referred to as the periodically oscillating plasma sphere or POPS) may undergo a self-similar collapse in a harmonic oscillator potential formed by a uniform electron background. A major uncertainty in this oscillating plasma scheme is the stability of the virtual cathode that forms the harmonic oscillator potential. The electron-electron two-stream stability of the virtual cathode has previously been studied with a fluid model, a slab kinetic model, a spherically symmetric kinetic model, and experimentally [R. A. Nebel and J. M. Finn, Phys. Plasmas 8, 1505 (2001); R. A. Nebel et al., Phys. Plasmas 12, 040501 (2005)]. Here the mode is studied with a two-dimensional particle-in-cell code. Results indicate stability limits near those of the previously spherically symmetric case.

  2. Usefulness of Sonication of Cardiovascular Implantable Electronic Devices to Enhance Microbial Detection

    PubMed Central

    Nagpal, Avish; Patel, Robin; Greenwood-Quaintance, Kerryl E.; Baddour, Larry M.; Lynch, David T.; Lahr, Brian D.; Maleszewski, Joseph J.; Friedman, Paul A.; Hayes, David L.; Sohail, M. Rizwan

    2015-01-01

    The cardiovascular implantable electronic device (CIED) infection rate is rising disproportionately to the rate of device implantation. Identification of microorganisms that cause CIED infections is not always achieved using present laboratory techniques. We conducted a prospective study to determine whether device vortexing-sonication followed by culture of the resulting sonicate fluid would enhance microbial detection compared with traditional swab or pocket tissue cultures. Forty-two subjects with noninfected and 35 with infected CIEDs were prospectively enrolled over 12 months. One swab each from the device pocket and device surface, pocket tissue, and the CIED were collected from each patient. Swabs and tissues were cultured using routine methods. The CIED was processed in Ringer’s solution using vortexing-sonication and the resultant fluid semiquantitatively cultured. Tissue and swab growth was considered significant when colonies grew on ≥2 quadrants of the culture plate and device was considered significant when ≥20 colonies were isolated from 10 ml of sonicate fluid. In noninfected group, 5% of sonicate fluids yielded significant bacterial growth, compared with 5% of tissue cultures (p = 1.00) and 2% of both pocket and device swab cultures (p = 0.317 each). In infected group, significant bacterial growth was observed in 54% of sonicate fluids, significantly greater than the sensitivities of pocket swab (20%, p = 0.001), device swab (9%, p <0.001), or tissue (9%, p <0.001) culture. In conclusion, vortexing-sonication of CIEDs with semiquantitative culture of the resultant sonicate fluid results in a significant increase in the sensitivity of culture results, compared with swab or tissue cultures. PMID:25779615

  3. Measurement and production of electron deflection using a sweeping magnetic device in radiotherapy.

    PubMed

    Damrongkijudom, N; Oborn, B; Butson, M; Rosenfeld, A

    2006-09-01

    The deflection and removal of high energy electrons produced by a medical linear accelerator has been attained by a Neodymium Iron Boron (NdFeB) permanent magnetic deflector device. This work was performed in an attempt to confirm the theoretical amount of electron deflection which could be produced by a magnetic field for removal of electrons from a clinical x-ray beam. This was performed by monitoring the paths of mostly monoenergetic clinical electron beams (6 MeV to 20 MeV) swept by the magnetic fields using radiographic film and comparing to first order deflection models. Results show that the measured deflection distance for 6 MeV electrons was 18 +/- 6 cm and the calculated deflection distance was 21.3 cm. For 20 MeV electrons, this value was 5 +/- 2 cm for measurement and 5.1 cm for calculation. The magnetic fields produced can thus reduce surface dose in treatment regions of a patient under irradiation by photon beams and we can predict the removal of all electron contaminations up to 6 MeV from a 6 MV photon beam with the radiation field size up to 10 x 10 cm2. The model can also estimate electron contamination still present in the treatment beam at larger field sizes. PMID:17058588

  4. The Business Letter.

    ERIC Educational Resources Information Center

    Nederland Independent School District, TX.

    GRADES OR AGES: Grades 9-12. SUBJECT MATTER: Business. ORGANIZATION AND PHYSICAL APPEARANCE: This guide, designed for direct student use, indicates the parts of a business letter, a placement guide, and steps for typing letters. Worksheets and illustrations indicate forms of block and indented styles; open, closed, and mixed punctuation; the…

  5. A Framed Letter.

    ERIC Educational Resources Information Center

    Chiodo, Beverly A.; Hatcher, Barbara

    1997-01-01

    In a correspondence class, students were asked to name a hero or heroine and list their qualities. Many named parents or grandparents, and the teacher wrote letters telling them what the students had said about them. The letter was to convey the student's respect and appreciation, something they often find difficult to do in person. (JOW)

  6. Letters from a Suicide

    ERIC Educational Resources Information Center

    Barnes, Donna Holland; Lawal-Solarin, Foluso Williams; Lester, David

    2007-01-01

    There has been no published study on personal letters written before an individual's suicidal death hitherto, although studies have been done using diaries. The purpose of this study was to search for trends in the use of particular linguistic categories in a series of personal letters written before an individual's suicidal death. A linguistic…

  7. Toward the development of portable miniature intelligent electronic color identification devices

    NASA Astrophysics Data System (ADS)

    Nicolau, Dan V., Jr.; Livingston, Peter; Jahshan, David; Evans, Rob

    2004-03-01

    The identification and differentiation of colours is a relatively problematic task for colour-impaired and partially vision-impaired persons and an impossible one for completely blind. In various contexts, this leads to a loss of independence or an increased risk of harm. The identification of colour using optoelectronic devices, on the other hand, can be done precisely and inexpensively. Additionally, breakthroughs in miniaturising and integrating colour sensors into biological systems may lead to significant advances in electronic implants for alleviating blindness. Here we present a functional handheld device developed for the identification of colour, intended for use by the vision-impaired. We discuss the features and limitations of the device and describe in detail one target application - the identification of different banknote denominations by the blind.

  8. Automatic switching and guidance system to facilitate unassisted uroflowmetry using commercial electronic devices.

    PubMed

    Terai, Akito; Ueda, Nobufumi; Utsunomiya, Noriaki; Kohei, Naoki; Aoyama, Teruyoshi; Inoue, Koji

    2006-08-01

    To enable male patients to undergo uroflowmetry in a private condition without medical supervision, we devised an automatic switching and patient guidance system for the spinning disk uroflowmeter Urodyn 1000, using two commercial electronic devices (an infrared motion sensor tap and a memorizable vacuum fluorescent display). Instead of running the uroflowmeter continuously, which shortens the life of the spinning disk due to mechanical wear, an infrared motion sensor turns on the devices each time a patient enters the room. The patient urinates according to the timely instructions on the visible display and voided urine directly flows into a urinal. The devices are automatically turned off 5 min after the patient leaves the room. With the use of our system, men already acquainted with uroflowmetry could perform self-administered uroflowmetry any time in private. The system was considered useful for improving the quality of patient service.

  9. Selected fault testing of electronic isolation devices used in nuclear power plant operation

    SciTech Connect

    Villaran, M.; Hillman, K.; Taylor, J.; Lara, J.; Wilhelm, W.

    1994-05-01

    Electronic isolation devices are used in nuclear power plants to provide electrical separation between safety and non-safety circuits and systems. Major fault testing in an earlier program indicated that some energy may pass through an isolation device when a fault at the maximum credible potential is applied in the transverse mode to its output terminals. During subsequent field qualification testing of isolators, concerns were raised that the worst case fault, that is, the maximum credible fault (MCF), may not occur with a fault at the maximum credible potential, but rather at some lower potential. The present test program investigates whether problems can arise when fault levels up to the MCF potential are applied to the output terminals of an isolator. The fault energy passed through an isolated device during a fault was measured to determine whether the levels are great enough to potentially damage or degrade performance of equipment on the input (Class 1E) side of the isolator.

  10. Single-electron devices fabricated using double-angle deposition and plasma oxidation

    NASA Astrophysics Data System (ADS)

    Hong, Y.; Barcikowski, Z. S.; Ramanayaka, A. N.; Stewart, M. D., Jr.; Zimmerman, N. M.; Pomeroy, J. M.; Quantum Processes; Metrology Group Team

    We report on development of plasma oxidized, single-electron transistors (SETs) where we seek low-capacitance and small-area Al/AlOx/Al tunnel junctions with small charge offset drift. Performance of metal-based SET quantum devices and superconducting devices has suffered from long-term charge offset drift, high defect densities and charge noise. We use plasma oxidation to lower defect densities of the oxide layer, and adjustable deposition angles to control the overlapping areas for Al/AlOx/Al tunnel junctions. Current-voltage and charge offset drift measurements are planned for cryogenic temperatures. Other electrical properties will be measured at room temperature. We hope to see Coulomb blockade oscillations on these devices and better charge offset stability than typical Al/AlOx/Al SETs.

  11. Stress testing on silicon carbide electronic devices for prognostics and health management.

    SciTech Connect

    Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

    2011-01-01

    Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

  12. Discharge and photo-luminance properties of a parallel plates electron emission lighting device.

    PubMed

    Li, Chia-Hung; Liu, Ming-Chung; Chiang, Chang-Lin; Li, Jung-Yu; Chen, Shih-Pu; Hsieh, Tai-Chiung; Chou, Yen-I; Lin, Yi-Ping; Wang, Po-Hung; Chun, Ming-Shin; Zeng, Hui-Kai; Juang, Jenh-Yih

    2011-01-01

    The gas discharge and photo-luminance properties of a planar lighting source featuring highly uniform light emission and mercury-free design were studied. The current density-voltage characteristics and the associated gas discharge of the devices operating with the values of the ratio of electric field to gas pressure (E/p) between 4.3 kV/Torr-cm and 35.7 kV/Torr-cm indicate that the width of the cathode fall extends over the entire gap between the two electrodes and the device is mostly in the obstructed discharge regime. The optical emission analysis confirmed the electron collision-induced gas emissions and strong effect of gas pressure on the phosphor emission when operated at constant current density, both are indicative of the primary roles played by the electron energy. PMID:21263712

  13. High performance electronic device for the measurement of the inverse spin Hall effect

    NASA Astrophysics Data System (ADS)

    Gómez, Javier E.; Guillén, Matías; Butera, Alejandro; Albaugh, Neil P.

    2016-02-01

    We have developed a high performance analog electronic device that can be used for the measurement of the inverse spin Hall effect (ISHE) as a function of the applied magnetic field. The electronic circuit is based on the synchronous detection technique with a careful selection of the active components in order to optimize the response in this application. The electronic accessory was adapted for the simultaneous measurement of the ISHE signal and the microwave absorption in an electron spin resonance spectrometer and tested with a bilayer sample of 5 nm of permalloy (Ni80Fe20) and 5 nm of tantalum. The response of the electronic device was characterized as a function of the microwave power, the amplitude and frequency of the modulation signal, and the relative phase between signal and reference. This last characterization reveals a simple method to put in phase the signal with the reference. The maximum signal to noise ratio was achieved for a modulation frequency between 6 and 12 kHz, for the largest possible values of field modulation amplitude and microwave power.

  14. Mechanical flip-chip for ultra-high electron mobility devices

    DOE PAGESBeta

    Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; Laroche, Dominique; Sandia National Lab.; Lilly, Michael P.; Reno, John L.; West, Ken W.; Pfeiffer, Loren N.; Gervais, Guillaume

    2015-09-22

    In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

  15. Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

    NASA Astrophysics Data System (ADS)

    Bennaceur, Keyan; Bilodeau, Simon; Schmidt, Benjamin; Gaucher, Samuel; Laroche, Dominique; Lilly, Mike; Reno, John; West, Ken; Pfeiffer, Loren; Gervais, Guillaume

    We present a novel ``flip-chip'' microfabrication method that was used to make a quantum point contact (QPC) on a two-dimensional electron gas (2DEG) without any fabrication process on the 2DEG. Electrostatic gates are of paramount importance for the physics of devices based on 2DEG since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG, which is in many cases detrimental to its electron mobility. Our approach does not require any processing of the 2DEG material leaving it pristine and reusable. It relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate QPC on GaAs/AlGaAs materials with high electron mobility ranging from 1e6 to 1e7 cm2V/s. (Bennaceur, K. et al. Scientific Reports 5, 13494 (2015)). Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  16. High performance electronic device for the measurement of the inverse spin Hall effect.

    PubMed

    Gómez, Javier E; Guillén, Matías; Butera, Alejandro; Albaugh, Neil P

    2016-02-01

    We have developed a high performance analog electronic device that can be used for the measurement of the inverse spin Hall effect (ISHE) as a function of the applied magnetic field. The electronic circuit is based on the synchronous detection technique with a careful selection of the active components in order to optimize the response in this application. The electronic accessory was adapted for the simultaneous measurement of the ISHE signal and the microwave absorption in an electron spin resonance spectrometer and tested with a bilayer sample of 5 nm of permalloy (Ni80Fe20) and 5 nm of tantalum. The response of the electronic device was characterized as a function of the microwave power, the amplitude and frequency of the modulation signal, and the relative phase between signal and reference. This last characterization reveals a simple method to put in phase the signal with the reference. The maximum signal to noise ratio was achieved for a modulation frequency between 6 and 12 kHz, for the largest possible values of field modulation amplitude and microwave power. PMID:26931877

  17. Development of a physical and electronic model for RuO 2 nanorod rectenna devices

    NASA Astrophysics Data System (ADS)

    Dao, Justin

    Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications. In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques. Conductive Atomic Force Microscopy (C-AFM) measurements were performed on single nanorods to characterize structure and electrical conductivity. The C-AFM probe tip is placed on a single nanorod and I-V characteristics are measured, potentially exhibiting rectifying capabilities. An analysis of these results using fundamental semiconductor physics principles is presented. Experimental data for silicon substrates was most closely approximated by the Simmons model for direct electron tunneling, whereas that of aluminum substrates was well approximated by Fowler-Nordheim tunneling. The native oxide of titanium is regarded as a semiconductor rather than an insulator and its ability to function as a rectifier is not strong. An electronic model for these nanorods is described herein.

  18. Devices using ballistic transport of two dimensional electron gas in delta doped gallium arsenide high electron mobility transistor structures

    NASA Astrophysics Data System (ADS)

    Kang, Sungmu

    In this thesis, devices using the ballistic transport of two dimensional electron gas (2DEG) in GaAs High Electron Mobility Transistor(HEMT) structure is fabricated and their dc and ac properties are characterized. This study gives insight on operation and applications of modern submicron devices with ever reduced gate length comparable to electron mean free path. The ballistic transport is achieved using both temporal and spatial limits in this thesis. In temporal limit, when frequency is higher than the scattering frequency (1/(2pitau)), ballistic transport can be achieved. At room temperature, generally the scattering frequency is around 500 GHz but at cryogenic temperature (≤4K) with high mobility GaAs HEMT structure, the frequency is much lower than 2 GHz. On this temporal ballistic transport regime, effect of contact impedance and different dc mobility on device operation is characterized with the ungated 2DEG of HEMT structure. In this ballistic regime, impedance and responsivity of plasma wave detector are investigated using the gated 2DEG of HEMT at different ac boundary conditions. Plasma wave is generated at asymmetric ac boundary conditions of HEMTs, where source is short to ground and drain is open while rf power is applied to gate. The wave velocity can be tuned by gate bias voltage and induced drain to source voltage(Vds ) shows the resonant peak at odd number of fundamental frequency. Quantitative power coupling to plasma wave detector leads to experimental characterization of resonant response of plasma wave detector as a function of frequency. Because plasma wave resonance is not limited by transit time, the physics learned in this study can be directly converted to room temperature terahertz detection by simply reducing gate length(Lgate) to submicron for the terahertz application such as non destructive test, bio medical analysis, homeland security, defense and space. In same HEMT structure, the dc and rf characterization on device is also

  19. Nanoscale interfacial structure for Novel Opto-electronic and Ion-trapping Devices

    NASA Astrophysics Data System (ADS)

    Ulin-Avila, Erick

    In this dissertation, we present contributions to the nanoscale engineering of electronic and geometrical structure of dielectric-metal interfaces. Such structure is designed to support the interaction of light and matter for useful scientific and technological applications. Among our interests are electromagnetic subwavelength localization, propagation and storage; photonic manipulation, modulation, synchronization and its use in the confinement of atomic systems. The latter is directed towards a new generation of scalable devices for quantum information processing (QIP) and surface science studies.

  20. The Role of Space Experiments in the Radiation Qualification of Electronic and Photonic Devices and Systems

    NASA Technical Reports Server (NTRS)

    Buchner, S.; LaBel, K.; Barth, J.; Campbell, A.

    2005-01-01

    Space experiments are occasionally launched to study the effects of radiation on electronic and photonic devices. This begs the following questions: Are space experiments necessary? Do the costs justify the benefits? How does one judge success of space experiment? What have we learned from past space experiments? How does one design a space experiment? This viewgraph presentation provides information on the usefulness of space and ground tests for simulating radiation damage to spacecraft components.