Hall effect within the colossal magnetoresistive semimetallic state of MoTe2

NASA Astrophysics Data System (ADS)

Zhou, Qiong; Rhodes, D.; Zhang, Q. R.; Tang, S.; Schönemann, R.; Balicas, L.

2016-09-01

Here, we report a systematic study on the Hall effect of the semimetallic state of bulk MoTe2, which was recently claimed to be a candidate for a novel type of Weyl semimetallic state. The temperature (T ) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and nonsaturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below T ˜40 K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase transition around this temperature.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Power Dependence of the Electron Mobility Profile in a Hall Thruster

NASA Technical Reports Server (NTRS)

Jorns, Benjamin A.; Hofery, Richard H.; Mikellides, Ioannis G.

2014-01-01

The electron mobility profile is estimated in a 4.5 kW commercial Hall thruster as a function of discharge power. Internal measurements of plasma potential and electron temperature are made in the thruster channel with a high-speed translating probe. These measurements are presented for a range of throttling conditions from 150 - 400 V and 0.6 - 4.5 kW. The fluid-based solver, Hall2De, is used in conjunction with these internal plasma parameters to estimate the anomalous collision frequency profile at fixed voltage, 300 V, and three power levels. It is found that the anomalous collision frequency profile does not change significantly upstream of the location of the magnetic field peak but that the extent and magnitude of the anomalous collision frequency downstream of the magnetic peak does change with thruster power. These results are discussed in the context of developing phenomenological models for how the collision frequency profile depends on thruster operating conditions.

Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

NASA Astrophysics Data System (ADS)

Keswani, Neeti; Nakajima, Yoshikata; Chauhan, Neha; Kumar, Sakthi; Ohno, H.; Das, Pintu

2018-05-01

In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

NASA Astrophysics Data System (ADS)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, J.; Ghimire, N. J.; Jiang, J. S.

Extremely large magnetoresistance (XMR) was recently discovered in YSb but its origin, along with that of many other XMR materials, is an active subject of debate. Here we demonstrate that YSb, with a cubic crystalline lattice and anisotropic bulk electron Fermi pockets, can be an excellent candidate for revealing the origin of XMR. We carried out angle dependent Shubnikov – de Haas quantum oscillation measurements to determine the volume and shape of the Fermi pockets. In addition, by investigating both Hall and longitudinal magnetoresistivities, we reveal that the origin of XMR in YSb lies in its carrier high mobility withmore » a diminishing Hall factor that is obtained from the ratio of the Hall and longitudinal magentoresistivities. The high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductivity while a diminishing Hall factor reveals the latent XMR hidden in the longitudinal magnetoconductivity whose inverse has a nearly quadratic magnetic-field dependence. The Hall factor highlights the deviation of the measured magnetoresistivity from its full potential value and provides a general formulation to reveal the origin of XMR behavior in high mobility materials and of nonsaturating MR behavior as a whole. Our approach can be readily applied to other XMR materials.« less

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, F.; Gao, K. H., E-mail: khgao@tju.edu.cn; Li, Z. Q.

2015-04-21

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q}more » owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.« less

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

NASA Astrophysics Data System (ADS)

Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-03-01

We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

Integer, fractional, and anomalous quantum Hall effects explained with Eyring's rate process theory and free volume concept.

PubMed

Hao, Tian

2017-02-22

The Hall effects, especially the integer, fractional and anomalous quantum Hall effects, have been addressed using Eyring's rate process theory and free volume concept. The basic assumptions are that the conduction process is a common rate controlled "reaction" process that can be described with Eyring's absolute rate process theory; the mobility of electrons should be dependent on the free volume available for conduction electrons. The obtained Hall conductivity is clearly quantized as with prefactors related to both the magnetic flux quantum number and the magnetic quantum number via the azimuthal quantum number, with and without an externally applied magnetic field. This article focuses on two dimensional (2D) systems, but the approaches developed in this article can be extended to 3D systems.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

PubMed

Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

2012-11-14

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

Novel High Speed Devices and Heterostructures Prepared by Molecular Beam Epitaxy

DTIC Science & Technology

1989-02-13

GaSb/GaAs system was reported from the results of photoreflectance measurements : w ereport a heavy-hole band offset s5; 1.7 for GaAs.g9bd.,, establishing...studied by variable temperature Hall measurements . For the GaA# 1_hb# material grown on InP, a two-acceptor model was forwarded to describe the Hall...Meanwhile, from Hall measurements , room temperature electron mobilities as high as 57000 m./Vs were reported in a 4.6 & thick unintentionally-doped InSb

High-mobility hydrogen-terminated Si(111) transistors for measurement of six-fold valley degenerate two-dimensional electron systems in fractional quantum Hall regime

NASA Astrophysics Data System (ADS)

Hu, Binhui; Yazdanpanah, Mohamad Meqdad; Kane, Bruce E.

2015-03-01

The quality of hydrogen-terminated Si(111) (H-Si(111)) transistors has improved significantly. Peak electron mobility of 325,000 cm2/Vs was achieved at 90 mK, and the fractional quantum Hall effect (FQHE) at 1 < ν < 2 was studied extensively. We have further improved the device by solving gate leakage and contact problems with an updated design, in which a Si piece with thermal oxide acts as a gate through a vacuum cavity, and PN junctions are used to define a hexagonal two-dimensional (2D) region on a H-Si(111) piece. The device operates as an ambipolar transistor, in which a 2D electron system (2DES) and a 2D hole system can be induced at the same H-Si(111) surface. Peak electron mobility of more than 200,000 cm2/Vs is routinely achieved at 300 mK. The Si(111) surface has a six-fold valley degeneracy. The hexagonal device is designed to investigate the symmetry of the 2DES. Preliminary data show that the transport anisotropy at ν < 6 can be explained by the valley occupancy. The details of the valley occupancy can be caused by several mechanisms, such as miscut, magnetic field, pseudospin quantum Hall ferromagnetism (QHFM), and nematic valley polarization phases. The FQHE is investigated in magnetic fields up to 35T, and the properties of composite fermions will be discussed.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi 2O 2Se

DOE PAGES

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; ...

2017-04-03

Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi 2O 2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m 0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi 2O 2Se was found to increase as thinning down to the monolayer duemore » to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm 2 V -1 s -1 was achieved in as-grown Bi 2O 2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi 2O 2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm 2 V -1 s -1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi 2O 2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.« less

Dopant behavior in heavily doped polycrystalline Ge1- x Sn x layers prepared with pulsed laser annealing in water

NASA Astrophysics Data System (ADS)

Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

2018-04-01

A low-temperature process for the formation of heavily doped polycrystalline Ge (poly-Ge) layers on insulators is required to realize next-generation electronic devices. In this study, we have systematically investigated pulsed laser annealing (PLA) in flowing water for heavily doped amorphous Ge1- x Sn x layers (x ≈ 0.02) with various dopants such as B, Al, Ga, In, P, As, and Sb on SiO2. It is found that the dopant density after PLA with a high laser energy is reduced when the oxidized dopant has a lower oxygen chemical potential than H2O. As a result, for the p-type doping of B, Al, Ga, and In, we obtained a high Hall hole density of 5 × 1019 cm-3 for PLA with a low energy. Consequently, the Hall hole mobility is limited to as low as 10 cm2 V-1 s-1. In contrast, for As and Sb doping, because the density of substitutional dopants does not decrease even after PLA with a high energy, we achieved a high Hall electron density of 6 × 1019 cm-3 and a high Hall electron mobility simultaneously. These results indicate that preventing the oxidation of dopant atoms by water is an important factor for achieving heavy doping using PLA in water.

Modulated phases of graphene quantum Hall polariton fluids

PubMed Central

Pellegrino, Francesco M. D.; Giovannetti, Vittorio; MacDonald, Allan H.; Polini, Marco

2016-01-01

There is a growing experimental interest in coupling cavity photons to the cyclotron resonance excitations of electron liquids in high-mobility semiconductor quantum wells or graphene sheets. These media offer unique platforms to carry out fundamental studies of exciton-polariton condensation and cavity quantum electrodynamics in a regime, in which electron–electron interactions are expected to play a pivotal role. Here, focusing on graphene, we present a theoretical study of the impact of electron–electron interactions on a quantum Hall polariton fluid, that is a fluid of magneto-excitons resonantly coupled to cavity photons. We show that electron–electron interactions are responsible for an instability of graphene integer quantum Hall polariton fluids towards a modulated phase. We demonstrate that this phase can be detected by measuring the collective excitation spectra, which is often at a characteristic wave vector of the order of the inverse magnetic length. PMID:27841346

Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

Origin of the extremely large magnetoresistance in the semimetal YSb

DOE PAGES

Xu, J.; Ghimire, N. J.; Jiang, J. S.; ...

2017-08-29

Extremely large magnetoresistance (XMR) was recently discovered in YSb but its origin, along with that of many other XMR materials, is an active subject of debate. Here we demonstrate that YSb, with a cubic crystalline lattice and anisotropic bulk electron Fermi pockets, can be an excellent candidate for revealing the origin of XMR. We carried out angle dependent Shubnikov – de Haas quantum oscillation measurements to determine the volume and shape of the Fermi pockets. In addition, by investigating both Hall and longitudinal magnetoresistivities, we reveal that the origin of XMR in YSb lies in its carrier high mobility withmore » a diminishing Hall factor that is obtained from the ratio of the Hall and longitudinal magentoresistivities. The high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductivity while a diminishing Hall factor reveals the latent XMR hidden in the longitudinal magnetoconductivity whose inverse has a nearly quadratic magnetic-field dependence. The Hall factor highlights the deviation of the measured magnetoresistivity from its full potential value and provides a general formulation to reveal the origin of XMR behavior in high mobility materials and of nonsaturating MR behavior as a whole. Our approach can be readily applied to other XMR materials.« less

Study of electron transport in a Hall thruster by axial–radial fully kinetic particle simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Shinatora, E-mail: choh.shinatora@jaxa.jp; Kubota, Kenichi; Funaki, Ikkoh

2015-10-15

Electron transport across a magnetic field in a magnetic-layer-type Hall thruster was numerically investigated for the future predictive modeling of Hall thrusters. The discharge of a 1-kW-class magnetic-layer-type Hall thruster designed for high-specific-impulse operation was modeled using an r-z two-dimensional fully kinetic particle code with and without artificial electron-diffusion models. The thruster performance results showed that both electron transport models captured the experimental result within discrepancies less than 20% in thrust and discharge current for all the simulated operation conditions. The electron cross-field transport mechanism of the so-called anomalous diffusion was self-consistently observed in the simulation without artificial diffusion models;more » the effective electron mobility was two orders of magnitude higher than the value obtained using the classical diffusion theory. To account for the self-consistently observed anomalous transport, the oscillation of plasma properties was speculated. It was suggested that the enhanced random-walk diffusion due to the velocity oscillation of low-frequency electron flow could explain the observed anomalous diffusion within an order of magnitude. The dominant oscillation mode of the electron flow velocity was found to be 20 kHz, which was coupled to electrostatic oscillation excited by global ionization instability.« less

Characteristics and transport effects of the electron drift instability in Hall-effect thrusters

NASA Astrophysics Data System (ADS)

Lafleur, T.; Baalrud, S. D.; Chabert, P.

2017-02-01

The large electron {E}× {B} drift (relative to the ions) in the azimuthal direction of Hall-effect thrusters is well known to excite a strong instability. In a recent paper (Lafleur et al 2016 Phys. Plasmas 23 053503) we demonstrated that this instability leads to an enhanced electron-ion friction force that increases the electron cross-field mobility to levels similar to those seen experimentally. Here we extend this work by considering in detail the onset criteria for the formation of this instability (both in xenon, and other propellants of interest), and identify a number of important characteristics that it displays within Hall-effect thrusters (HETs): including the appearance of an additional non-dimensionalized scaling parameter (the instability growth-to-convection ratio), which controls the instability evolution and amplitude. We also investigate the effect that the instability has on electron and ion heating in HETs, and show that it leads to an ion rotation in the azimuthal direction that is in agreement with that seen experimentally.

Magneto-transport Properties Using Top-Gated Hall Bars of Epitaxial Heterostructures on Single-Crystal SiGe Nanomembranes

NASA Astrophysics Data System (ADS)

Jacobson, R. B.; Li, Yize; Foote, Ryan; Cui, Xiaorui; Savage, Donald; Sookchoo, Pornsatit; Eriksson, Mark; Lagally, Max

2014-03-01

A high-quality 2-dimensional electron gas (2DEG) is crucial for quantum electronics and spintronics. Grown heterostructures on SiGe nanomembranes (NMs) show promise to create these 2DEG structures because they have reduced strain inhomogeneities and mosaic tilt. We investigate charge transport properties of these SiGe NMs/heterostructures over a range of temperatures and compare them with results from heterostructures grown on compositionally graded SiGe substrates. Measurements are done by creating Hall bars with top gates on the samples. From the magneto-transport data, low-carrier-density mobility values are calculated. Initial results on the grown heterostructures give a typical curve for mobility versus carrier density, but extraction of the zero-carrier-density mobility is dependent on the curve-fitting technique. Sponsored by United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1995-01-01

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Optical probing of the metal-to-insulator transition in a two-dimensional high-mobility electron gas

NASA Astrophysics Data System (ADS)

Dionigi, F.; Rossella, F.; Bellani, V.; Amado, M.; Diez, E.; Kowalik, K.; Biasiol, G.; Sorba, L.

2011-06-01

We study the quantum Hall liquid and the metal-insulator transition in a high-mobility two-dimensional electron gas, by means of photoluminescence and magnetotransport measurements. In the integer and fractional regime at ν>1/3, by analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above ν=1/3, the system undergoes metal-to-insulator transition, and in the insulating phase the dispersion becomes linear with evidence of an increased renormalized mass.

An evaluation of krypton propellant in Hall thrusters

NASA Astrophysics Data System (ADS)

Linnell, Jesse Allen

Due to its high specific impulse and low price, krypton has long sparked interest as an alternate Hall thruster propellant. Unfortunately at the moment, krypton's relatively poor performance precludes it as a legitimate option. This thesis presents a detailed investigation into krypton operation in Hall thrusters. These findings suggest that the performance gap can be decreased to 4% and krypton can finally become a realistic propellant option. Although krypton has demonstrated superior specific impulse, the xenon-krypton absolute efficiency gap ranges between 2 and 15%. A phenomenological performance model indicates that the main contributors to the efficiency gap are propellant utilization and beam divergence. Propellant utilization and beam divergence have relative efficiency deficits of 5 and 8%, respectively. A detailed characterization of internal phenomena is conducted to better understand the xenon-krypton efficiency gap. Krypton's large beam divergence is found to be related to a defocusing equipotential structure and a weaker magnetic field topology. Ionization processes are shown to be linked to the Hall current, the magnetic mirror topology, and the perpendicular gradient of the magnetic field. Several thruster design and operational suggestions are made to optimize krypton efficiency. Krypton performance is optimized for discharge voltages above 500 V and flow rates corresponding to an a greater than 0.015 mg/(mm-s), where alpha is a function of flow rate and discharge channel dimensions (alpha = m˙alphab/Ach). Performance can be further improved by increasing channel length or decreasing channel width for a given flow rate. Also, several magnetic field design suggestions are made to enhance ionization and beam focusing. Several findings are presented that improve the understanding of general Hall thruster physics. Excellent agreement is shown between equipotential lines and magnetic field lines. The trim coil is shown to enhance beam focusing, ionization processes, and electron dynamics. Electron mobility and the Hall parameter are studied and compared to different mobility models. Azimuthal electron current is studied using a fluid and particle drift approach. Analyses of several magnetic field features are conducted and simple tools are suggested for the development of future Hall thrusters. These findings have strong implications for future Hall thruster design, lifetimes, and modeling.

Extremely high electron mobility in a phonon-glass semimetal

NASA Astrophysics Data System (ADS)

Ishiwata, S.; Shiomi, Y.; Lee, J. S.; Bahramy, M. S.; Suzuki, T.; Uchida, M.; Arita, R.; Taguchi, Y.; Tokura, Y.

2013-06-01

The electron mobility is one of the key parameters that characterize the charge-carrier transport properties of materials, as exemplified by the quantum Hall effect as well as high-efficiency thermoelectric and solar energy conversions. For thermoelectric applications, introduction of chemical disorder is an important strategy for reducing the phonon-mediated thermal conduction, but is usually accompanied by mobility degradation. Here, we show a multilayered semimetal β-CuAgSe overcoming such a trade-off between disorder and mobility. The polycrystalline ingot shows a giant positive magnetoresistance and Shubnikov de Haas oscillations, indicative of a high-mobility small electron pocket derived from the Ag s-electron band. Ni doping, which introduces chemical and lattice disorder, further enhances the electron mobility up to 90,000 cm2 V-1 s-1 at 10 K, leading not only to a larger magnetoresistance but also a better thermoelectric figure of merit. This Ag-based layered semimetal with a glassy lattice is a new type of promising thermoelectric material suitable for chemical engineering.

Fractional quantum Hall effect at Landau level filling ν = 4/11

DOE PAGES

Pan, W.; Baldwin, K. W.; West, K. W.; ...

2015-01-09

In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy, within 1% of the expected value of h/(4/11)e 2, were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν =more » 3/8 and 5/13.« less

Computed versus measured ion velocity distribution functions in a Hall effect thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrigues, L.; CNRS, LAPLACE, F-31062 Toulouse; Mazouffre, S.

2012-06-01

We compare time-averaged and time-varying measured and computed ion velocity distribution functions in a Hall effect thruster for typical operating conditions. The ion properties are measured by means of laser induced fluorescence spectroscopy. Simulations of the plasma properties are performed with a two-dimensional hybrid model. In the electron fluid description of the hybrid model, the anomalous transport responsible for the electron diffusion across the magnetic field barrier is deduced from the experimental profile of the time-averaged electric field. The use of a steady state anomalous mobility profile allows the hybrid model to capture some properties like the time-averaged ion meanmore » velocity. Yet, the model fails at reproducing the time evolution of the ion velocity. This fact reveals a complex underlying physics that necessitates to account for the electron dynamics over a short time-scale. This study also shows the necessity for electron temperature measurements. Moreover, the strength of the self-magnetic field due to the rotating Hall current is found negligible.« less

Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization

NASA Astrophysics Data System (ADS)

Wolkenberg, Andrzej; Przeslawski, Tomasz

1996-04-01

Galvanomagnetic measurements were performed on the square shaped samples after Van der Pauw and on the Hall bar at low electric fields app. 1.5 V/cm and magnetic induction app. 6 kG in order to make a comparison between the theoretical and experimental results of the temperature dependence of mobility and resistivity from 70 K to 300 K. A calculation method was obtained of the drift mobility and the Hall mobility in which the scatterings are applied: on ionized impurities, on polar optical phonons, on acoustic phonons (deformation potential), on acoustic phonons (piezoelectric potential) and on dislocations. The elaborated method transformed to a computer program allows us to fit experimental values of the resistivity and the Hall mobility to those calculated. The fitting procedure makes it possible to characterize the quality of the n-type GaAs MBE layer, i.e. the net electron concentration, whole ionized impurities concentration and dislocation density after Read space charge cylinders model. The calculations together with the measurements allow us to obtain compensation ratio value in the layer, too. The influence of the epitaxial layer thickness on layers measurements accuracy in the case of Van der Pauw square probe was investigated. It was stated that in the layers under 3 micrometer the bulk properties are strongly influenced by both surfaces. The results of measurements of the same layer using the Van der Pauw and the Hall bar structure were compared. It was stated that the Hall bar structure only could be used to obtain proper measurements results.

Theory for the anomalous electron transport in Hall-effect thrusters

NASA Astrophysics Data System (ADS)

Lafleur, Trevor; Baalrud, Scott; Chabert, Pascal

2016-09-01

Using insights from particle-in-cell (PIC) simulations, we develop a kinetic theory to explain the anomalous cross-field electron transport in Hall-effect thrusters (HETs). The large axial electric field in the acceleration region of HETs, together with the radially applied magnetic field, causes electrons to drift in the azimuthal direction with a very high velocity. This drives an electron cyclotron instability that produces large amplitude oscillations in the plasma density and azimuthal electric field, and which is convected downstream due to the large axial ion drift velocity. The frequency and wavelength of the instability are of the order of 5 MHz and 1 mm respectively, while the electric field amplitude can be of a similar magnitude to axial electric field itself. The instability leads to enhanced electron scattering many orders of magnitude higher than that from standard electron-neutral or electron-ion Coulomb collisions, and gives electron mobilities in good agreement with experiment. Since the instability is a strong function of almost all plasma properties, the mobility cannot in general be fitted with simple 1/B or 1/B2 scaling laws, and changes to the secondary electron emission coefficient of the HET channel walls are expected to play a role in the evolution of the instability. This work received financial support from a CNES postdoctoral research award.

Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

NASA Astrophysics Data System (ADS)

Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

2013-09-01

This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity

NASA Astrophysics Data System (ADS)

Jha, Rajveer; Higashinaka, Ryuji; Matsuda, Tatsuma D.; Ribeiro, Raquel A.; Aoki, Yuji

2018-05-01

We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5 × 106 % in 9 T at 2 K, being in the highest class in the literature, attest to their high quality. Based on a simple two-carrier model, the densities (ne and nh) and mobilities (μe and μh) for electron and hole carriers have been uniquely determined combining both Hall- and electrical-resistivity data. The difference between ne and nh is 1% at 2 K, indicating that the system is in an compensated condition. The negative Hall resistivity growing rapidly below 20 K is due to a rapidly increasing μh/μe approaching one. Below 3 K in a low field region, we found the Hall resistivity becomes positive, reflecting that μh/μe finally exceeds one in this region. These anomalous behaviors of the carrier densities and mobilities might be associated with the existence of a Lifshitz transition and/or the spin texture on the Fermi surface.

Fluctuations, Electron Transport, and Flow Shear in 2D Axial, Azimuthal (z-θ) Hybrid Hall Thruster Simulations.

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Gascon, Nicolas; Knoll, Aaron; Scharfe, Michelle; Cappelli, Mark

2007-11-01

Motivated by the inability of radial-axial (r-z) simulations to properly treat cross-field electron transport in Hall thrusters, a novel 2D z-θ model has been implemented. In common with many r-z descriptions, the simulation is hybrid in nature and assumes quasi-neutrality. Unlike r-z models, electron transport is not enhanced with an ad-hoc mobility coefficient; instead it is given by collisional or ``classical'' terms as well as ``anomalous'' contributions associated with azimuthal electric field fluctuations. Results indicate that anomalous transport dominates classical transport for most of the channel and near field, except in a strong electron flow shear region near the channel exit. The correlation between flow shear, fluctuation behavior, and electron transport will be examined, along with experimental data from the Stanford Hall Thruster. Our findings make a strong link to the turbulent transport suppression mechanism by flow shear seen in fusion devices. The scheme for combining the r-z and z-θ descriptions into an upcoming 3D hybrid model will be presented.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

NASA Astrophysics Data System (ADS)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Environmental stability of high-mobility indium-oxide based transparent electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tohsophon, Thanaporn; Dabirian, Ali; De Wolf, Stefaan

2015-11-01

Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In{sub 2}O{sub 3} (ITO), H-doped In{sub 2}O{sub 3} (IO:H), and Zn-doped In{sub 2}O{sub 3} (IZO) electrodes under damp heat (DH) conditions (85 °C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (R{sub s}) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% R{sub s} degradation, due to losses in electron Hall mobility (μ{sub Hall}).more » We propose that this degradation results from chemisorbed OH- or H{sub 2}O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μ{sub Hall} strongly degrades during DH, the optical mobility (μ{sub optical}) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.« less

Hybrid-PIC Computer Simulation of the Plasma and Erosion Processes in Hall Thrusters

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Katz, Ira; Mikellides, Ioannis G.; Gamero-Castano, Manuel

2010-01-01

HPHall software simulates and tracks the time-dependent evolution of the plasma and erosion processes in the discharge chamber and near-field plume of Hall thrusters. HPHall is an axisymmetric solver that employs a hybrid fluid/particle-in-cell (Hybrid-PIC) numerical approach. HPHall, originally developed by MIT in 1998, was upgraded to HPHall-2 by the Polytechnic University of Madrid in 2006. The Jet Propulsion Laboratory has continued the development of HPHall-2 through upgrades to the physical models employed in the code, and the addition of entirely new ones. Primary among these are the inclusion of a three-region electron mobility model that more accurately depicts the cross-field electron transport, and the development of an erosion sub-model that allows for the tracking of the erosion of the discharge chamber wall. The code is being developed to provide NASA science missions with a predictive tool of Hall thruster performance and lifetime that can be used to validate Hall thrusters for missions.

Investigation of Fluctuation-Induced Electron Transport in Hall Thrusters with a 2D Hybrid Code in the Azimuthal and Axial Coordinates

NASA Astrophysics Data System (ADS)

Fernandez, Eduardo; Borelli, Noah; Cappelli, Mark; Gascon, Nicolas

2003-10-01

Most current Hall thruster simulation efforts employ either 1D (axial), or 2D (axial and radial) codes. These descriptions crucially depend on the use of an ad-hoc perpendicular electron mobility. Several models for the mobility are typically invoked: classical, Bohm, empirically based, wall-induced, as well as combinations of the above. Experimentally, it is observed that fluctuations and electron transport depend on axial distance and operating parameters. Theoretically, linear stability analyses have predicted a number of unstable modes; yet the nonlinear character of the fluctuations and/or their contribution to electron transport remains poorly understood. Motivated by these observations, a 2D code in the azimuthal and axial coordinates has been written. In particular, the simulation self-consistently calculates the azimuthal disturbances resulting in fluctuating drifts, which in turn (if properly correlated with plasma density disturbances) result in fluctuation-driven electron transport. The characterization of the turbulence at various operating parameters and across the channel length is also the object of this study. A description of the hybrid code used in the simulation as well as the initial results will be presented.

Numerical Study of Current Driven Instabilities and Anomalous Electron Transport in Hall-effect Thrusters

NASA Astrophysics Data System (ADS)

Tran, Jonathan

Plasma turbulence and the resulting anomalous electron transport due to azimuthal current driven instabilities in Hall-effect thrusters is a promising candidate for developing predictive models for the observed anomalous transport. A theory for anomalous electron transport and current driven instabilities has been recently studied by [Lafluer et al., 2016a]. Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster modeling. Using a reduced dimension particle in cell simulation implemented in the Thermophysics Universal Research Framework developed by the Air Force Research Lab, we show collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field and the plasma density. These high-frequency and short wavelength fluctuations can lead to an effective cross-field mobility many orders of magnitude larger than what is expected from classical electron-neutral momentum collisions in the low neutral density regime. We further adapt the previous study by [Lampe et al., 1971] and [Stringer, 1964] for related current driven instabilities to electric propulsion relevant mass ratios and conditions. Finally, we conduct a preliminary study of resolving this instability with a modified hybrid simulation with the hope of integration with established hybrid Hall-effect thruster simulations.

A zero-equation turbulence model for two-dimensional hybrid Hall thruster simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cappelli, Mark A., E-mail: cap@stanford.edu; Young, Christopher V.; Cha, Eunsun

2015-11-15

We present a model for electron transport across the magnetic field of a Hall thruster and integrate this model into 2-D hybrid particle-in-cell simulations. The model is based on a simple scaling of the turbulent electron energy dissipation rate and the assumption that this dissipation results in Ohmic heating. Implementing the model into 2-D hybrid simulations is straightforward and leverages the existing framework for solving the electron fluid equations. The model recovers the axial variation in the mobility seen in experiments, predicting the generation of a transport barrier which anchors the region of plasma acceleration. The predicted xenon neutral andmore » ion velocities are found to be in good agreement with laser-induced fluorescence measurements.« less

Separation of electron and hole dynamics in the semimetal LaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, F.; Xu, J.; Botana, A. S.

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strongmore » magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.« less

Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices

NASA Astrophysics Data System (ADS)

Brown, A. E.; Baril, N.; Zuo, D.; Almeida, L. A.; Arias, J.; Bandara, S.

2017-09-01

The influence of dopant concentration on both in-plane mobility and minority carrier lifetime in long-wave infrared InAs/InAsSb superlattices (SLs) was investigated. Unintentially doped ( n-type) and various concentrations of Be-doped ( p-type) SLs were characterized using variable-field Hall and photoconductive decay techniques. Minority carrier lifetimes in p-type InAs/InAsSb SLs are observed to decrease with increasing carrier concentration, with the longest lifetime at 77 K determined to be 437 ns, corresponding to a measured carrier concentration of p 0 = 4.1 × 1015 cm-3. Variable-field Hall technique enabled the extraction of in-plane hole, electron, and surface electron transport properties as a function of temperature. In-plane hole mobility is not observed to change with doping level and increases with reducing temperature, reaching a maximum at the lowest temperature measured of 30 K. An activation energy of the Be-dopant is determined to be 3.5 meV from Arrhenius analysis of hole concentration. Minority carrier electrons populations are suppressed at the highest Be-doping levels, but mobility and concentration values are resolved in lower-doped samples. An average surface electron conductivity of 3.54 × 10-4 S at 30 K is determined from the analysis of p-type samples. Effects of passivation treatments on surface conductivity will be presented.

Study of certain features of the electronic structure of the ternary alloys Ni2(Mn, Fe) and Ni3(Mn, Co)

NASA Technical Reports Server (NTRS)

Zhukova, V. M.; Fadin, V. P.

1981-01-01

The changes in electronic structure related to transport processes occurring during the alloying of he alloy Ni3Mn with iron and cobalt, and the ordering of the ternary alloys thus formed are presented. The Hall effect, the absolute thermal emf, the internal saturation induction, the Nernst-Ettingshausen constant, and the electrical resistivity were measured. Results show a decrease in the contribution of hole sections of the Fermi surface to the transport process occurs together with a considerable increase in the contribution of electron sections. In this case, the mobility of 3 dimensional holes decreases and the mobility of 4s electrons increases considerably.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Single-valley quantum Hall ferromagnet in a dilute Mg xZn 1-xO/ZnO strongly correlated two-dimensional electron system

DOE PAGES

Kozuka, Y.; Tsukazaki, A.; Maryenko, D.; ...

2012-02-03

We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the Mg xZn 1-xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our resultmore » indicates that the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.« less

Hole mobilities and the effective Hall factor in p-type GaAs

NASA Astrophysics Data System (ADS)

Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

1997-06-01

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

NASA Astrophysics Data System (ADS)

Chen, Y. Z.; Trier, F.; Wijnands, T.; Green, R. J.; Gauquelin, N.; Egoavil, R.; Christensen, D. V.; Koster, G.; Huijben, M.; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N. H.; Sulpizio, J. A.; Honig, M.; Prawiroatmodjo, G. E. D. K.; Jespersen, T. S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, G.; Sawatzky, G. A.; Pryds, N.

2015-08-01

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal-insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1-xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov-de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

Hall mobility in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

2011-08-01

Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

Anisotropic transport properties of the two-dimensional electron gas in ordered-disordered GaInP2 homojunctions: The structure of ordered domains

NASA Astrophysics Data System (ADS)

Driessen, F. A. J. M.; Bauhuis, G. J.; Hageman, P. R.; van Geelen, A.; Giling, L. J.

1994-12-01

The modulation-doped ordered-GaInP2/disordered-GaInP2 homojunction is presented. Capacitance-voltage (CV) profiling techniques, temperature-dependent Hall and resistivity measurements, cross-sectional transverse electron micrographs (TEM), and high-field magnetotransport have been used to characterize this structure grown by metal-organic vapor-phase epitaxy. The CV measurements showed a narrow profile at the homointerface with an order of magnitude reduction in carrier density within 3 nm. Typical two-dimensional behavior was observed from Hall data showing sheet carrier densities as high as 3.6×1013 cm-2 without carrier freeze-out, and constant mobilities around 900 cm2 V-1 s-1 below T=100 K. The 300-K channel conductivity of this junction is 3.2×10-3 Ω-1, which is higher than reported for other two-dimensional electron gases. By proper choice of the substrate orientation, domains of only the (111¯) ordering variant were present. TEM showed elongated shapes of average thickness 3.5-6 nm and length 75 nm in the (011) plane. By using Hall bars with different current directions, an asymmetry is observed for the contributions to the scattering mechanisms which determine the mobility: ``mesoscopic'' interface-roughness scattering for T<100 K and cluster scattering for 100300 K indicates strong electron-phonon coupling. This asymmetry shows that the domain length in the (011) plane is larger than that in the (011¯) plane. The magnetoresistance ρxx and the Hall resistance ρxy show oscillations in reciprocal magnetic field involving an excited subband i with ni2D=7.6×1011 cm-2, where 2D denotes two dimensional. The ρxy versus B curve shows features of a slight parallel conduction.

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

NASA Astrophysics Data System (ADS)

Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Borah, Abhinandan; Agarwal, Hitesh; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar

There is an increasing interest in the electronic properties of few layer graphene as it offers a platform to study electronic interactions because the dispersion of bands can be tuned with number and stacking of layers in combination with electric field. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism (QHF) seen in a dual gated ABA trilayer graphene sample. Due to high mobility (500,000 cm2V-1s-1) in our device compared to previous studies, we find all symmetry broken states including ν = 0 filling factor at relatively low magnetic field (6T). Activation measurements show that Landau Level (LL) gaps are enhanced by interactions. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of QHF states at low magnetic field.

Transport anomalies of high-mobility Q-valley electrons in few-layer WS2 and MoS2

NASA Astrophysics Data System (ADS)

Wang, Ning

Atomically thin transition metal dichalcogenides (TMDCs) have opened new avenues for exploring physical property anomalies due to their large band gaps, strong spin-orbit couplings, and rich valley degrees of freedom. Although novel optical phenomena such as valley selective circular dichroism, opto-valley Hall effect, and valley Zeeman effect have been extensively studied in TMDCs, investigation of quantum transport properties has encountered a number of obstacles primarily due to the low carrier mobility and strong impurity scattering. Recently, we successfully fabricated ultrahigh-mobility few-layer TMDC field-effect transistors based on the boron nitride encapsulation method and observed a number of interesting transport properties, such as even-odd layer-dependent magnetotransport of Q-valley electrons in WS2 and MoS2 and unconventional quantum Hall transport of Γ-valley hole carriers in WSe2. In few-layer samples of these TMDCs, the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q-valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q-valleys to be spin-valley coupled. In this talk, I'll demonstrate the prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices. In addition, we observe a series of quantum Hall states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field in p-type few-layer TMDCs, indicating a large Zeeman energy associated with the carriers in the valence band at the Γ-valley. Financial supports from the Research Grants Council of Hong Kong (Project Nos. 16302215, HKU9/CRF/13G, 604112 and N-HKUST613/12) are hereby acknowledged.

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements

PubMed Central

Chen, Y.; Yi, H. T.; Wu, X.; Haroldson, R.; Gartstein, Y. N.; Rodionov, Y. I.; Tikhonov, K. S.; Zakhidov, A.; Zhu, X. -Y.; Podzorov, V.

2016-01-01

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10−11 to 10−10 cm3 s−1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cm2 V−1 s−1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. We suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles. PMID:27477058

Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements

DOE PAGES

Chen, Y.; Yi, H. T.; Wu, X.; ...

2016-08-01

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10 –11 to 10 –10 cm 3 s –1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cmmore » 2 V –1 s –1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. As a result, we suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.« less

A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

PubMed Central

Park, Jozeph; Kim, Yang Soo; Ok, Kyung-Chul; Park, Yun Chang; Kim, Hyun You; Park, Jin-Seong; Kim, Hyun-Suk

2016-01-01

High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a Zn metal target in a plasma mixture of Ar, N2, and O2 gas. The RF power and the O2 to N2 gas flow rates were systematically adjusted to prepare a set of ZnON films with different relative anion contents. The carrier density was found to be greatly affected by the anion composition, while the electron mobility is determined by a fairly complex mechanism. First-principles calculations indicate that excess vacant nitrogen sites (VN) in N-rich ZnON disrupt the local electron conduction paths, which may be restored by having oxygen anions inserted therein. The latter are anticipated to enhance the electron mobility, and the exact process parameters that induce such a phenomenon can only be found experimentally. Contour plots of the Hall mobility and carrier density with respect to the RF power and O2 to N2 gas flow rate ratio indicate the existence of an optimum region where maximum electron mobility is obtained. Using ZnON films grown under the optimum conditions, the fabrication of high-performance devices with field-effect mobility values exceeding 120 cm2/Vs is demonstrated based on simple reactive RF sputtering methods. PMID:27098656

Far-infrared-induced magnetoresistance oscillations in GaAs/AlxGa1-xAs -based two-dimensional electron systems

NASA Astrophysics Data System (ADS)

Wirthmann, André; McCombe, Bruce D.; Heitmann, Detlef; Holland, Steffen; Friedland, Klaus-Jürgen; Hu, Can-Ming

2007-11-01

We report on photoresistance and magnetotransport measurements in a moderate mobility two-dimensional electron system subject to far-infrared (terahertz) radiation. The photoresistance shows radiation induced 1/B -periodic oscillations, which we identify as the terahertz analog of microwave-induced resistance oscillations (MIROs). The MIRO-analog oscillations show a sign reversal in the low-field, high current regime. We simultaneously observe magnetoplasmons and MIRO-analog oscillations with no apparent coupling between them. Using a meandering Hall-bar geometry allows us to greatly enhance sensitivity and detect these oscillations even at elevated temperatures and moderate mobilities.

Growth and Electrical and Far-Infrared Properties of Wide Electron Wells in Semiconductors

DTIC Science & Technology

1994-04-15

uniform. cmw where the barrier doping is 5 X 10" 6 cm -’, the well 300 K true electron ,profiles are shown for four dfiffer- depth calculated using Eq...in some samples. The mobility vs temperature characteristic of a where y- 0 . 7 6 . Mobility decreases from -9.4x 10’ cm 2/ sample of n-GaAs bulk doped...x 10 14 cm -3 -wt size effect scattering. Points show experimental data (for sample PBW 3 1). II I I 0 2 O 4 O 6 ITm:’au K I 14 ujanmm Hall eff I At

Growth and characterization of cubic SiC single-crystal films on Si

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-01-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Astrophysics Data System (ADS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-06-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

PubMed

Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

2015-08-05

Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO).

Transfer-Free Batch Fabrication of Large-Area Suspended Graphene Membranes

DTIC Science & Technology

2010-01-01

Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer , H. L. Ultrahigh Electron Mobility in Suspended Graphene. Solid State...Commun. 2008, 146, 351–355. 14. Bolotin, K. I.; Ghahari, F.; Shulman, M. D.; Stormer , H. L.; Kim, P. Observation of the Fractional Quantum Hall Effect in

Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudryashov, A. A.; Kytin, V. G.; Lunin, R. A.

2016-07-15

The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, ismore » discussed.« less

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1993-01-01

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.

PubMed

Mani, Ramesh G; Smet, Jürgen H; von Klitzing, Klaus; Narayanamurti, Venkatesh; Johnson, William B; Umansky, Vladimir

2002-12-12

The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs). In quantum Hall systems and superconductors, zero-resistance states often coincide with the appearance of a gap in the energy spectrum. Here we report the observation of zero-resistance states and energy gaps in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation. Zero-resistance-states occur about magnetic fields B = 4/5 Bf and B = 4/9 Bf, where Bf = 2pifm*/e,m* is the electron mass, e is the electron charge, and f is the electromagnetic-wave frequency. Activated transport measurements on the resistance minima also indicate an energy gap at the Fermi level. The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Real-Time Measurements and Characterization of Airborne Particulate Matter from a Primary Silicon Carbide Production Plant.

PubMed

Jørgensen, Rikke Bramming; Kero, Ida Teresia

2017-12-20

Airborne particulate matter in the silicon carbide (SiC) industry is a known health hazard. The aims of this study were to elucidate whether the particulate matter generated inside the Acheson furnace during active operation is representative of the overall particulate matter in the furnace hall, and whether the Acheson furnaces are the main sources of ultrafine particles (UFP) in primary SiC production. The number concentration of ultrafine particles was evaluated using an Electrical Low Pressure Impactor (ELPI TM , Dekati Ltd., Tampere, Finland), a Fast Mobility Particle Sizer (FMPS TM , TSI, Shoreview, MN, USA) and a Condensation Particle Counter (CPC, TSI, Shoreview, MN, USA). The results are discussed in terms of particle number concentration, particle size distribution and are also characterized by means of electron microscopy (TEM/SEM). Two locations were investigated; the industrial Acheson process furnace hall and a pilot furnace hall; both of which represent an active operating furnace. The geometric mean of the particle number concentration in the Acheson process furnace hall was 7.7 × 10⁴ particles/cm³ for the UFP fraction and 1.0 × 10⁵ particles/cm³ for the submicrometre fraction. Particulate matter collected at the two sites was analysed by electron microscopy. The PM from the Acheson process furnace hall is dominated by carbonaceous particles while the samples collected near the pilot furnace are primarily rich in silicon.

Real-Time Measurements and Characterization of Airborne Particulate Matter from a Primary Silicon Carbide Production Plant

PubMed Central

2017-01-01

Airborne particulate matter in the silicon carbide (SiC) industry is a known health hazard. The aims of this study were to elucidate whether the particulate matter generated inside the Acheson furnace during active operation is representative of the overall particulate matter in the furnace hall, and whether the Acheson furnaces are the main sources of ultrafine particles (UFP) in primary SiC production. The number concentration of ultrafine particles was evaluated using an Electrical Low Pressure Impactor (ELPITM, Dekati Ltd., Tampere, Finland), a Fast Mobility Particle Sizer (FMPSTM, TSI, Shoreview, MN, USA) and a Condensation Particle Counter (CPC, TSI, Shoreview, MN, USA). The results are discussed in terms of particle number concentration, particle size distribution and are also characterized by means of electron microscopy (TEM/SEM). Two locations were investigated; the industrial Acheson process furnace hall and a pilot furnace hall; both of which represent an active operating furnace. The geometric mean of the particle number concentration in the Acheson process furnace hall was 7.7 × 104 particles/cm3 for the UFP fraction and 1.0 × 105 particles/cm3 for the submicrometre fraction. Particulate matter collected at the two sites was analysed by electron microscopy. The PM from the Acheson process furnace hall is dominated by carbonaceous particles while the samples collected near the pilot furnace are primarily rich in silicon. PMID:29261158

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

PubMed

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

2015-06-11

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

PubMed Central

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

2015-01-01

Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

NASA Astrophysics Data System (ADS)

Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang

2017-03-01

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V-1 s-1 and 104 cm2 V-1 s-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Reduced mobility and PPC in In(.20)Ga(.80)As / Al(.23)Ga(.77)As HEMT structure

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, Rafael A.; Haugland, Edward J.; Alterovitz, Samuel A.

1992-01-01

Transport properties of a pseudomorphic In(.20)Ga(.80)As/Al(.23)Ga(.77)As High Electron Mobility Transistor (HEMT) structure were measured by Hall and SdH techniques. Two samples of identical structures but with different doping levels were compared. Low temperature mobility measurements as a function of concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23 percent), large persistent photoconductivity (PPC) was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.

Improvement of electron mobility in La:BaSnO{sub 3} thin films by insertion of an atomically flat insulating (Sr,Ba)SnO{sub 3} buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiogai, Junichi, E-mail: junichi.shiogai@imr.tohoku.ac.jp; Nishihara, Kazuki; Sato, Kazuhisa

One perovskite oxide, ASnO{sub 3} (A = Sr, Ba), is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO{sub 3} substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO{sub 3} / (Sr,Ba)SnO{sub 3} for buffering this large lattice mismatch between La:BaSnO{sub 3} and SrTiO{sub 3} substrate. The insertion of 200-nm-thick BaSnO{sub 3} on (Sr,Ba)SnO{sub 3} bilayer buffer structures reduces the number of dislocationsmore » and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO{sub 3} buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO{sub 3} shows that the highest obtained value of mobility is 78 cm{sup 2}V{sup −1}s{sup −1} because of its fewer dislocations. High electron mobility films based on perovskite BaSnO{sub 3} can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.« less

A mobile ferromagnetic shape detection sensor using a Hall sensor array and magnetic imaging.

PubMed

Misron, Norhisam; Shin, Ng Wei; Shafie, Suhaidi; Marhaban, Mohd Hamiruce; Mailah, Nashiren Farzilah

2011-01-01

This paper presents a mobile Hall sensor array system for the shape detection of ferromagnetic materials that are embedded in walls or floors. The operation of the mobile Hall sensor array system is based on the principle of magnetic flux leakage to describe the shape of the ferromagnetic material. Two permanent magnets are used to generate the magnetic flux flow. The distribution of magnetic flux is perturbed as the ferromagnetic material is brought near the permanent magnets and the changes in magnetic flux distribution are detected by the 1-D array of the Hall sensor array setup. The process for magnetic imaging of the magnetic flux distribution is done by a signal processing unit before it displays the real time images using a netbook. A signal processing application software is developed for the 1-D Hall sensor array signal acquisition and processing to construct a 2-D array matrix. The processed 1-D Hall sensor array signals are later used to construct the magnetic image of ferromagnetic material based on the voltage signal and the magnetic flux distribution. The experimental results illustrate how the shape of specimens such as square, round and triangle shapes is determined through magnetic images based on the voltage signal and magnetic flux distribution of the specimen. In addition, the magnetic images of actual ferromagnetic objects are also illustrated to prove the functionality of mobile Hall sensor array system for actual shape detection. The results prove that the mobile Hall sensor array system is able to perform magnetic imaging in identifying various ferromagnetic materials.

A Mobile Ferromagnetic Shape Detection Sensor Using a Hall Sensor Array and Magnetic Imaging

PubMed Central

Misron, Norhisam; Shin, Ng Wei; Shafie, Suhaidi; Marhaban, Mohd Hamiruce; Mailah, Nashiren Farzilah

2011-01-01

This paper presents a Mobile Hall Sensor Array system for the shape detection of ferromagnetic materials that are embedded in walls or floors. The operation of the Mobile Hall Sensor Array system is based on the principle of magnetic flux leakage to describe the shape of the ferromagnetic material. Two permanent magnets are used to generate the magnetic flux flow. The distribution of magnetic flux is perturbed as the ferromagnetic material is brought near the permanent magnets and the changes in magnetic flux distribution are detected by the 1-D array of the Hall sensor array setup. The process for magnetic imaging of the magnetic flux distribution is done by a signal processing unit before it displays the real time images using a netbook. A signal processing application software is developed for the 1-D Hall sensor array signal acquisition and processing to construct a 2-D array matrix. The processed 1-D Hall sensor array signals are later used to construct the magnetic image of ferromagnetic material based on the voltage signal and the magnetic flux distribution. The experimental results illustrate how the shape of specimens such as square, round and triangle shapes is determined through magnetic images based on the voltage signal and magnetic flux distribution of the specimen. In addition, the magnetic images of actual ferromagnetic objects are also illustrated to prove the functionality of Mobile Hall Sensor Array system for actual shape detection. The results prove that the Mobile Hall Sensor Array system is able to perform magnetic imaging in identifying various ferromagnetic materials. PMID:22346653

Influence of a parallel magnetic field on the microwave photoconductivity in a high-mobility two-dimensional electron system

NASA Astrophysics Data System (ADS)

Yang, C. L.; Du, R. R.; Pfeiffer, L. N.; West, K. W.

2006-07-01

Using a two-axis magnet, we have studied experimentally the influence of a parallel magnetic field (B//) on microwave-induced resistance oscillations (MIROs) and zero-resistance states (ZRS) previously discovered in a high-mobility two-dimensional electron system. We have observed a strong suppression of MIRO/ZRS by a modest B//˜1T . In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is apparently enhanced by B// . These findings cannot be explained by a simple modification of single-particle energy spectrum and/or scattering parameters by B// .

Current Driven Instabilities and Anomalous Mobility in Hall-effect Thrusters

NASA Astrophysics Data System (ADS)

Tran, Jonathan; Eckhardt, Daniel; Martin, Robert

2017-10-01

Due to the extreme cost of fully resolving the Debye length and plasma frequency, hybrid plasma simulations utilizing kinetic ions and quasi-steady state fluid electrons have long been the principle workhorse methodology for Hall-effect thruster (HET) modeling. Plasma turbulence and the resulting anomalous electron transport in HETs is a promising candidate for developing predictive models for the observed anomalous transport. In this work, we investigate the implementation of an anomalous electron cross field transport model for hybrid HET simulations such a HPHall. A theory for anomalous transport in HETs and current driven instabilities has been recently studied by Lafleur et al. This work has shown collective electron-wave scattering due to large amplitude azimuthal fluctuations of the electric field. We will further adapt the previous results for related current driven instabilities to electric propulsion relevant mass ratios and conduct a preliminary study of resolving this instability with a modified hybrid (fluid electron and kinetic ion) simulation with the hope of integration with established hybrid HET simulations. This work is supported by the Air Force Office of Scientific Research award FA9950-17RQCOR465.

Process for growing epitaxial gallium nitride and composite wafers

DOEpatents

Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

2003-05-13

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Charge carrier coherence and Hall effect in organic semiconductors

DOE PAGES

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

Charge carrier coherence and Hall effect in organic semiconductors

PubMed Central

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

2018-04-01

In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimizedmore » GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.« less

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering modelmore » indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.« less

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

The design of mobile robot control system for the aged and the disabled

NASA Astrophysics Data System (ADS)

Qiang, Wang; Lei, Shi; Xiang, Gao; Jin, Zhang

2017-01-01

This paper designs a control system of mobile robot for the aged and the disabled, which consists of two main parts: human-computer interaction and drive control module. The data of the two parts is transferred via universal asynchronous receiver/transmitter. In the former part, the speed and direction information of the mobile robot is obtained by hall joystick. In the latter part, the electronic differential algorithm is developed to implement the robot mobile function by driving two-wheel motors. In order to improve the comfort of the robot when speed or direction is changed, the least squares algorithm is used to optimize the speed characteristic curves of the two motors. Experimental results have verified the effectiveness of the designed system.

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

High electron doping to a wide band gap semiconductor 12CaO•7Al2O3 thin film

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2007-04-01

High-density electrons (˜1.9×1021cm-3) were doped into a polycrystalline film of a wide band gap (˜7eV) semiconductor 12CaO•7Al2O3 (C12A7) by an in situ postdeposition reduction treatment using an oxygen-deficient C12A7 overlayer. The resultant film exhibits metallic conduction with a Hall mobility of ˜2.5cm2V-1s-1 and a conductivity of ˜800Scm-1. Optical analyses indicate that most of the doped electrons behave as free carriers with an effective mass of 0.82me and the estimated in-grain mobility is 5.2cm2V-1s-1, which agrees reasonably with the value obtained for high-quality single crystals.

Hall Mobilities in GaNxAs1-x

DTIC Science & Technology

2010-01-01

Status Solidi C 7, No. 7–8, 1890–1893 (2010) / DOI 10.1002/pssc.200983569 Hall mobilities in GaNxAs1-x Javier Olea *,1, Kin Man Yu**,2, Wladek...in Fig. 1. Figure 2 shows the calculated carrier concentration dependence of the mobility for different N concentrations, at 1892 J. Olea et al

Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

NASA Astrophysics Data System (ADS)

Tutuc, Emanuel

Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

NASA Astrophysics Data System (ADS)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Y.; Yi, H. T.; Wu, X.

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10 –11 to 10 –10 cm 3 s –1) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cmmore » 2 V –1 s –1). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. As a result, we suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.« less

High temperature hall effect measurement system design, measurement and analysis

NASA Astrophysics Data System (ADS)

Berkun, Isil

A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non-toxic thermoelectric materials made from abundant elements and are suited for power generation application in the intermediate temperature range of (600 K - 800 K). In this work the thermoelectric materials were synthesized by a solid-state reac- tion using a molten-salt sealing method. The ingots produced were then powder processed, followed by pulsed electric sintering (PECS) densification. A set of Mg2.08Si0.4--x Sn0.6Sbx (0 ≤ x ≤ 0.072) compounds were investigated and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si 0.364Sn0.6Sb0.036 [2]. The high ZT value is related to a high electrical conductivity in these samples, which are possibly caused by a magnesium deficiency in the final prod- uct. Analysis of the measured results using LabVIEW and MATLAB developed programs showed good agreement with expected results and gave insight on mixed carrier dopant concentrations. [1] I. Berkun, S. N. Demlow, N. Suwanmonkha, T. P. Hogan, and T. A. Grotjohn, "Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond," in MRS Proceedings, vol. 1511, Cambridge Univ Press, 2013. [2] P. Gao, I. Berkun, R. D. Schmidt, M. F. Luzenski, X. Lu, P. B. Sarac, E. D. Case, and T. P. Hogan, "Transport and Mechanical Properties of High-ZT Mg2. 08si0. 4- x Sn0. 6sb x Thermoelectric Materials," Journal of Electronic Materials, pp. 1--14, 2013.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boieriu, P.; Grein, C.H.; Velicu, S.

2006-02-06

We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions.

The Physical Electronics of Graphene on Germanium

NASA Astrophysics Data System (ADS)

Rojas Delgado, Richard

The properties of graphene make it an outstanding candidate for electronic-device applications, especially those that require no band gap but a high conductance. The conductance, involving both carrier mobility and carrier concentration, will depend critically on the substrate to which graphene is transferred. I demonstrate an exceptionally high conductance in graphene transferred to Ge(001) and provide an understanding of the mechanism. Essential in this understanding is an interfacial chemistry consisting of Ge oxide and suboxide layers that provide the necessary charges to dope the graphene sheet, and whose chemical behavior is such that one can obtain long-term stability in the conductance. In contrast, when high-quality graphene is grown directly on Ge (100), (111), or (110), the conductance is unexceptional, but oxidation of the surface is significantly delayed and slowed, relative to both clean Ge and Ge with graphene transferred to its surface. [2,3] I fabricate Hall bars in graphene transferred to Ge(001) and graphene grown on Ge(001) using atmospheric-pressure chemical vapor deposition (CVD) with methane precursors, and measure the sheet resistance and Hall effect from 300K to 10K. Values of mobility and carrier concentration are extracted. I obtain the highest combination of mobility and carrier concentration yet reported in graphene (suspended or supported) for temperatures from 10 to 300K. The implication is that the primary mechanisms for scattering charge in the graphene, roughness and a non-uniform electrostatic potential due to fixed charges, have limited effect when the substrate is oxidized Ge.

ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

DTIC Science & Technology

2017-06-30

17394 4 / 13 HALL EFFECT THRUSTERS Hall Effect Thrusters (HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid...HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ...Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ Electron ExB Drift Unmagnetized Ions Results in Hall Current

Background Pressure Effects on Krypton Hall Effect Thruster Internal Acceleration

DTIC Science & Technology

2013-08-01

This was also previously seen for xenon. Several interpretations of the continued velocity dis- tribution broadening of the high pressure case of...acceleration region into the thruster rel- ative to lower background pressures. We have at- tributed this behavior to increased electron mobility...density. While the data presented thus far does shown some changes in the breadth of the velocity Kr II dis- tributions with increasing

P-type conductivity in annealed strontium titanate

DOE PAGES

Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

2015-12-17

In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO 3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm 2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm 2/Vs). Average hole densities were in the 10 9-10 10 cm -3 range, consistent with a deep acceptor.

Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

NASA Astrophysics Data System (ADS)

Watson, John D.

The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2nd Landau level and spin-based implementations of quantum computation. The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth and cryogenic measurement techniques outlined in chapters 2 and 3, respectively. In addition to a generic introduction to the molecular beam epitaxy growth technique, chapter 2 summarizes some of what was learned about the material purity issues currently limiting the low temperature electron mobility. Finally, a series of appendices are included which detail the experimental methods used over the course of the research. Chapter 4 presents an experiment examining transport in a low density two-dimensional hole system in which the hole density could be varied by means of an evaporated back gate. At low temperature, the mobility reached a maximum of 2.6 x 106 cm2/Vs at a density of 6.2 x 1010 cm-2 which is the highest reported mobility in a two-dimensional hole system to date. In addition, it was found that the mobility as a function of density did not follow a power law with a single exponent. Instead, it was found that the power law varied with density, indicating a cross-over between dominant scattering mechanisms at low density and high density. At low density the mobility was found to be limited by remote ionized impurity scattering, while at high density the dominant scattering mechanism was found to be background impurity scattering. Chapter 5 details an experiment examining transport in a series of two-dimensional hole gases in which the dopant setback distance and the Al mole fraction in the barriers of the quantum well were varied. The hole density was tuned in this way from 0.18 -- 1.9 x 1011 cm-2. Surprisingly, the mobility at T = 0.3 K was found to peak at 2.3 x 10 6 cm-2 at an intermediate density of 6.5 x 10 10 cm-2. Self-consistent Schrodinger/Poisson calculations were performed for each wafer to examine the scattering rates due to a variety of potentials at low temperature. The drop in mobility at high density could be accounted for with the inclusion of interface roughness scattering, but using the same interface roughness scattering parameters for similar two-dimensional electron gases produced inconsistent results. This leaves open the possibility of contributions from other scattering mechanisms in the hole samples at high density. Chapter 6 presents an in-depth study of in-situ backgated two-dimensional gases used for studying the fragile fractional quantum Hall states in the 2nd Landau level. It was found that leakage currents as small as 4 pA could cause noticeable heating of the electron gas if the lattice was not properly thermally anchored to the cryostat. However, it was also found that when the heterostructure design and device fabrication recipe were properly optimized, gate voltages as large as 4 V could be applied before the leakage turned on, allowing the density to be tuned from full depletion to over 4 x 1011 cm-2. As a result, heating effects at dilution refrigerator temperatures were negligible and the gap at nu = 5/2 could be tuned continuously with density to a maximum value of 625 mK, the largest reported to date. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. Such devices should prove useful for the study of electron correlations in nanostructures in the 2nd Landau level.

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

NASA Astrophysics Data System (ADS)

Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

2018-01-01

The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Low-Voltage Hall Thruster Mode Transitions

DTIC Science & Technology

2014-06-01

cross field electron mobility μe┴ in Eq. 2. ee e m Be   (1) 21 1 r ee 2 eee e Be m Ωm e            (2) where me is the electron... ee e m Be   21 1 r ee 2 eee e Be m Ωm e            Be m m Tk r e e e e  Analysis of Bulk Electron Parameters 100V – 120V, 10-20

Surface electrons in inverted layers of p-HgCdTe

NASA Technical Reports Server (NTRS)

Schacham, Samuel E.; Finkman, Eliezer

1990-01-01

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2017-12-01

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Study of subband electronic structure of Si δ-doped GaAs using magnetotransport measurements in tilted magnetic fields

NASA Astrophysics Data System (ADS)

Li, G.; Hauser, N.; Jagadish, C.; Antoszewski, J.; Xu, W.

1996-06-01

Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle <30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed.

Phenomenological view at the two-component physics of cuprates

NASA Astrophysics Data System (ADS)

Teitel'baum, G. B.

2017-08-01

In the search for mechanisms of high- T c superconductivity it is critical to know the electronic spectrum in the pseudogap phase from which superconductivity evolves. The lack of ARPES data for every cuprate family precludes an agreement as to its structure, doping and temperature dependence and the role of charge ordering. No approach has been developed yet to address the issue theoretically, and we limit ourselves by the phenomenological analysis of the experimental data. We argue that, in the Fermi-liquid-like regime ubiquitous in underdoped cuprates, the spectrum consists of holes on the Fermi arcs and an electronic pocket in contrast to the idea of the Fermi surface reconstruction via charge ordering. At high temperatures, the electrons are dragged by holes while at lower temperatures they get decoupled. The longstanding issue of the origin of the negative Hall coefficient in YBCO and Hg1201 at low temperature is resolved: the electronic contribution prevails, as its mobility becomes temperature independent, while the mobility of holes, scattered by the shortwavelength charge density waves, decreases.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podpirka, Adrian A., E-mail: adrian.podpirka.ctr@nrl.navy.mil; Katz, Michael B.; Twigg, Mark E.

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in themore » quantum Hall regime.« less

Batch-fabricated high-performance graphene Hall elements

PubMed Central

Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

2013-01-01

Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

Influence of deep level intrinsic defects on the carrier transport in p-type Hg1- xCdxTe

NASA Astrophysics Data System (ADS)

Hoerstel, W.; Klimakow, A.; Kramer, R.

1990-04-01

The magnetic field dependence of the Hall effect in p-type Hg1- xCdxTe is analysed for determining the carrier densities and their mobilities in the mixed conduction range T = 70-250 K. A consistent description of the temperature dependence of the concentrations and mobilities of electrons and holes succeeds by taking into account energy-dependent momentum scattering times in the transport coefficients. Using this formalism, an energy level near 0.7 Eg above the valence band edge caused by intrinsic defects which were influenced by thermal treament is determined and discussed.

Electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO3-δ epitaxial thin films and donor doped single-crystalline SrTiO3

NASA Astrophysics Data System (ADS)

Baniecki, J. D.; Ishii, M.; Aso, H.; Kobayashi, K.; Kurihara, K.; Yamanaka, K.; Vailionis, A.; Schafranek, R.

2011-12-01

Above room temperature electronic transport properties of SrxTiyO3-δ films with cation A/B = (La + Sr/Nb + Ti) ratios of 0.9 to 1.2 are compared to STO single crystals with combined Hall carrier densities of 3 × 1016 cm-3 ≤ nH ≤ 1022 cm-3. In contrast to Hall mobility which is single crystal-like (μH ≈ 6 cm2/Vs) only near A/B = 1, the Seebeck coefficient (S) is single crystal-like over a range of nonstoichiometry. For nH < 1020 cm-3, S is well described by nondegenerate band-like transport with a constant effective mass m∗/mo ≈ 5-8. For nH > 1021 cm-3, S is metallic-like with m∗/mo ˜ 8. No marked increase in m∗ with decreasing nH owing to a carrier filling dependence is observed.

Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

DOE PAGES

Malasi, A.; Taz, H.; Farah, A.; ...

2015-12-16

We report that ternary metal oxides of type (Me) 2O 3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10 4 S/m) and Hall mobility (>30 cm 2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV.more » This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.

PubMed

Xia, Fengnian; Wang, Han; Jia, Yichen

2014-07-21

Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600 cm(2)V(-1)s(-1) for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 μm. Field-effect transistors using 5 nm BP along x direction exhibit an on-off current ratio exceeding 10(5), a field-effect mobility of 205 cm(2)V(-1)s(-1), and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.

High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

2015-01-19

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

Magnetotransport of single crystalline YSb

DOE PAGES

Ghimire, N. J.; Botana, A. S.; Phelan, D.; ...

2016-05-10

Here, we report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75 000% at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, aremore » $$6.5\\times {{10}^{20}}$$ cm –3 and $$6.2\\times {{10}^{4}}$$ cm 2 Vs –1, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T m, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.« less

Beyond the Quantum Hall Effect: New Phases of 2D Electrons at High Magnetic Field

NASA Astrophysics Data System (ADS)

Eisenstein, James

2007-03-01

In this talk I will discuss recent experiments on high mobility single and double layer 2D electron systems in which collective phases lying outside the usual quantum Hall effect paradigm have been detected and studied. For example, in single layer 2D systems near half-filling of highly excited Landau levels new states characterized by a massive anisotropy in the electrical resistivity of the sample are observed at very low temperature. The anisotropy has been widely interpreted as the signature of a new class of correlated electron phases which incorporate a stripe-like charge density modulation. Orientational ordering of small striped domains at low temperatures accounts for the resistive anisotropy and is reminiscent of the isotropic-to-nematic phase transition in classical liquid crystals. Double layer 2D electron systems possess collective phases not present in single layer systems. In particular, when the total number of electrons in the bilayer equals the degeneracy of a single Landau level, an unusual phase appears at small layer separation. This phase possesses a novel broken symmetry, spontaneous interlayer phase coherence, which has a number of dramatic experimental signatures. The interlayer tunneling conductance develops a strong and very sharp resonance around zero bias resembling the dc Josephson effect. At the same time, both the longitudinal and Hall resistances of the sample vanish at low temperatures when currents are driven in opposite directions through the two layers. These, and other observations are broadly consistent with theories in which the broken symmetry phase can equivalently be described as a pseudospin ferromagnet or an (imperfect) excitonic superfluid. This work reflects a collaboration with M.P. Lilly, K.B. Cooper, I.B. Spielman, M. Kellogg, L.A. Tracy, L.N. Pfeiffer, and K.W. West.

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

NASA Astrophysics Data System (ADS)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Fourier-domain Mobility Spectrum Analysis (FMSA) for Characterizing Semiconductors with Multi-Electron/Hole Species

NASA Astrophysics Data System (ADS)

Cui, Boya; Kielb, Edward; Luo, Jiajun; Tang, Yang; Grayson, Matthew

Superlattices and narrow gap semiconductors often host multiple conducting species, such as electrons and holes, requiring a mobility spectral analysis (MSA) method to separate contributions to the conductivity. Here, a least-squares MSA method is introduced: the QR-algorithm Fourier-domain MSA (FMSA). Like other MSA methods, the FMSA sorts the conductivity contributions of different carrier species from magnetotransport measurements, arriving at a best fit to the experimentally measured longitudinal and Hall conductivities σxx and σxy, respectively. This method distinguishes itself from other methods by using the so-called QR-algorithm of linear algebra to achieve rapid convergence of the mobility spectrum as the solution to an eigenvalue problem, and by alternately solving this problem in both the mobility domain and its Fourier reciprocal-space. The result accurately fits a mobility range spanning nearly four orders of magnitude (μ = 300 to 1,000,000 cm2/V .s). This method resolves the mobility spectra as well as, or better than, competing MSA methods while also achieving high computational efficiency, requiring less than 30 second on average to converge to a solution on a standard desktop computer. Acknowledgement: Funded by AFOSR FA9550-15-1-0377 and AFOSR FA9550-15-1-0247.

The influence of nitrogen implantation on the electrical properties of amorphous IGZO

NASA Astrophysics Data System (ADS)

Zhan, S. L.; Zhao, M.; Zhuang, D. M.; Fu, E. G.; Cao, M. J.; Guo, L.; Ouyang, L. Q.

2017-09-01

In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016 cm-3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93 cm2/V s with the subsequent decrease to 6.49 cm2/V s, which reflects the reduction of the average potential barrier height (φ0) to be 22.0 meV with subsequent increase to 74.8 meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.

Development Status of the Helicon Hall Thruster

DTIC Science & Technology

2009-09-15

Hall thruster , the Helicon Hall Thruster , is presented. The Helicon Hall Thruster combines the efficient ionization mechanism of a helicon source with the favorable plasma acceleration properties of a Hall thruster . Conventional Hall thrusters rely on direct current electron bombardment to ionize the flow in order to generate thrust. Electron bombardment typically results in an ionization cost that can be on the order of ten times the ionization potential, leading to reduced efficiency, particularly at low

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

PubMed

Saito, Yu; Iwasa, Yoshihiro

2015-03-24

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Terahertz spin current pulses controlled by magnetic heterostructures

NASA Astrophysics Data System (ADS)

Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

2013-04-01

In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

NASA Astrophysics Data System (ADS)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

NASA Astrophysics Data System (ADS)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hong-Ru; Wang, Shih-Yin; Ou, Sin-Liang

The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm{sup 2}/V s when the electrons passed through the n-GaN and themore » patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.« less

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with the Anderson Localization Model

NASA Astrophysics Data System (ADS)

Li, Wanli; Vicente, C. L.; Xia, J. S.; Pan, W.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W.

2009-05-01

The quantum Hall-plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2 K down to 12 mK. This perfect scaling terminates sharply at a saturation temperature of Ts˜10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (Lϕ∝T-p/2) reaches the sample size (W) of millimeter scale. From a size dependent study, Ts∝W-1 was observed and p=2 was obtained. The exponent of the localization length, determined directly from the measured κ and p, is ν=2.38, and the dynamic critical exponent z=1.

Electron Transport and Ion Acceleration in a Low-power Cylindrical Hall Thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

A. Smirnov; Y. Raitses; N.J. Fisch

2004-06-24

Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are therefore more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. Electron cross-field transport in a 2.6 cm miniaturized cylindrical Hall thruster (100 W power level) has been studied through the analysis of experimental data and Monte Carlo simulations of electron dynamics in the thruster channel. The numerical model takes into account elastic and inelastic electron collisions with atoms, electron-wall collisions, including secondary electron emission, and Bohm diffusion. We show that in order to explainmore » the observed discharge current, the electron anomalous collision frequency {nu}{sub B} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant. The plasma density peak observed at the axis of the 2.6 cm cylindrical Hall thruster is likely to be due to the convergent flux of ions, which are born in the annular part of the channel and accelerated towards the thruster axis.« less

Understanding and Interrupting Hegemonic Projects in Education: Learning from Stuart Hall

ERIC Educational Resources Information Center

Apple, Michael W.

2015-01-01

Stuart Hall had a significant impact on critical analyses of rightist mobilizations in education. This is very visible in my own work, for example, in such volumes as "Official Knowledge" (2014) and "Educating the 'Right' Way" (2006). After describing an important series of lectures that Stuart Hall gave at the Havens Center…

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

PubMed

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

PubMed Central

Lee, H.-P.; Perozek, J.; Rosario, L. D.; Bayram, C.

2016-01-01

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates. PMID:27869222

Activation energies for the ν=5/2 Fractional Quantum Hall Effect at 10 Tesla

NASA Astrophysics Data System (ADS)

Zhang, Chi; Du, R. R.; Pfeiffer, L. N.; West, K. W.

2010-03-01

We reported on the low-temperature magnetotransport in a high-purity (mobility ˜ 1x10^7cm^2/Vs) modulation-doped GaAs/AlGaAs quantum well with a high electron density (6x10^11 cm-2). A quantized ν=5/2 Hall plateau is observed at B ˜ 10 T, with an activation gap δ5/2˜ 125±10 mK; the plateau can persist up to ˜ 25^o tilt-field. We determined the activation energies δ and quasi-gap energies δ^quasi for the ν=5/2, 7/3, and 8/3 fractional quantum Hall states in tilted-magnetic field (θ). The δ5/2, δ7/3 and the δ5/2^quasi , δ7/3^quasi are found to decrease in θ. We will present the systematic data and discuss their implications on the spin-polarization of ν=5/2 states observed at 10 T.[4pt] [1] R. Willett, Phys. Rev. Lett. 59, 1776 (1987).[0pt] [2] W. Pan et al, Solid State Commun. 119, 641 (2001).

Free-electron gas at charged domain walls in insulating BaTiO3

PubMed Central

Sluka, Tomas; Tagantsev, Alexander K.; Bednyakov, Petr; Setter, Nava

2013-01-01

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device. Theory predicts the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas. Here we show this phenomenon experimentally in charged domain walls of the prototypical ferroelectric BaTiO3. Their steady metallic-type conductivity, 109 times that of the parent matrix, evidence the presence of stable degenerate electron gas, thus adding mobility to functional interfaces. PMID:23651996

The microwave Hall effect measured using a waveguide tee

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coppock, J. E.; Anderson, J. R.; Johnson, W. B.

2016-03-14

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phasemore » when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm{sup 2}/(V s).« less

High-mobility strained organic semiconductors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Takeya, Jun; Matsui, H.; Kubo, T.; Hausermann, Roger

2016-11-01

Small molecular organic semiconductor crystals form interesting electronic systems of periodically arranged "charge clouds" whose mutual electronic coupling determines whether or not electronic states can be coherent over fluctuating molecules. This presentation focuses on two methods to reduce molecular fluctuation, which strongly restricts mobility of highly mobile charge in single-crystal organic transistors. The first example is to apply external hydrostatic pressure. Using Hall-effect measurement for pentacene FETs, which tells us the extent of the electronic coherence, we found a crossover from hopping-like transport of nearly localized charge to band transport of delocalized charge with full coherence. As the result of temperature dependence measurement, it turned out that reduced molecular fluctuation is mainly responsible for the crossover. The second is to apply uniaxial strain to single-crystal organic FETs. We applied stain by bending thin films of newly synthesized decyldinaphthobenzodithiophene (C10-DNBDT) on plastic substrate so that 3% strain is uniaxially applied. As the result, the room-temperature mobility increased by the factor of 1.7. In-depth analysis using X-ray diffraction (XRD) measurements and density functional theory (DFT) calculations reveal the origin to be the suppression of the thermal fluctuation of the individual molecules, which is confirmed by temperature dependent measurements. Our findings show that compressing the crystal structure directly restricts the vibration of the molecules, thus suppressing dynamic disorder, a unique mechanism in organic semiconductors. Since strain can easily be induced during the fabrication process, these findings can directly be exploited to build high performance organic devices.

Extremely large magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi2

NASA Astrophysics Data System (ADS)

Matin, M.; Mondal, Rajib; Barman, N.; Thamizhavel, A.; Dhar, S. K.

2018-05-01

Here, we report an extremely large positive magnetoresistance (XMR) in a single-crystal sample of MoSi2, approaching almost 107% at 2 K in a 14-T magnetic field without appreciable saturation. Hall resistivity data reveal an uncompensated nature of MoSi2 with an electron-hole compensation level sufficient enough to expect strong saturation of magnetoresistance in the high-field regime. Magnetotransport and the complementary de Haas-van Alphen (dHvA) oscillations results, however, suggest that strong Zeeman effect causes a magnetic field-induced modulation of the Fermi pockets and drives the system towards perfect electron-hole compensation condition in the high-field regime. Thus, the nonsaturating XMR of this semimetal arises under the unconventional situation of Zeeman effect-driven electron-hole compensation, whereas its huge magnitude is decided solely by the ultralarge value of the carrier mobility. Intrinsic ultralarge carrier mobility, strong suppression of backward scattering of the charge carriers, and nontrivial Berry phase in dHvA oscillations attest to the topological character of MoSi2. Therefore, this semimetal represents another material hosting combination of topological and conventional electronic phases.

Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

NASA Astrophysics Data System (ADS)

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

2018-02-01

Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T <20 K ) of the inelastic scattering rate (τi-1∝T ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1 ) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.

2016-01-14

In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electronmore » currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.« less

Large effective mass and interaction-enhanced Zeeman splitting of K -valley electrons in MoSe2

NASA Astrophysics Data System (ADS)

Larentis, Stefano; Movva, Hema C. P.; Fallahazad, Babak; Kim, Kyounghwan; Behroozi, Armand; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K.; Tutuc, Emanuel

2018-05-01

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe2, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8 me is extracted from the SdH oscillations' temperature dependence; me is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the K point. We attribute the FF parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio.

Emergence of high-mobility minority holes in the electrical transport of the Ba (Fe1 -xMnxAs )2 iron pnictides

NASA Astrophysics Data System (ADS)

Urata, T.; Tanabe, Y.; Huynh, K. K.; Heguri, S.; Oguro, H.; Watanabe, K.; Tanigaki, K.

2015-05-01

In Fe pnictide (Pn) superconducting materials, neither Mn nor Cr doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali-metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magnetotransport properties in Ba (Fe1 -xMnxAs )2 for elucidating the intrinsic reason. The negative Hall coefficient for x =0 estimated in the low magnetic field (B ) regime gradually increases as x increases, and its sign changes to a positive one at x =0.020 . Hall resistivities as well as simultaneous interpretation using the magnetoconductivity tensor including both longitudinal and transverse transport components clarify that minority holes with high mobility are generated by the Mn doping via spin-density wave transition at low temperatures, while original majority electrons and holes residing in the paraboliclike Fermi surfaces of the semimetallic Ba (FeAs )2 are negligibly affected. Present results indicate that the mechanism of hole doping in Ba (Fe1 -xMnxAs )2 is greatly different from that of the other superconducting FePn family.

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01

We report the low temperature (T  <  70 °C) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T  <  70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1 s-1 at a carrier density of 2.3  ×  1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

Kinetic particle simulation of discharge and wall erosion of a Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Shinatora; Komurasaki, Kimiya; Arakawa, Yoshihiro

2013-06-15

The primary lifetime limiting factor of Hall thrusters is the wall erosion caused by the ion induced sputtering, which is predominated by dielectric wall sheath and pre-sheath. However, so far only fluid or hybrid simulation models were applied to wall erosion and lifetime studies in which this non-quasi-neutral and non-equilibrium area cannot be treated directly. Thus, in this study, a 2D fully kinetic particle-in-cell model was presented for Hall thruster discharge and lifetime simulation. Because the fully kinetic lifetime simulation was yet to be achieved so far due to the high computational cost, the semi-implicit field solver and the techniquemore » of mass ratio manipulation was employed to accelerate the computation. However, other artificial manipulations like permittivity or geometry scaling were not used in order to avoid unrecoverable change of physics. Additionally, a new physics recovering model for the mass ratio was presented for better preservation of electron mobility at the weakly magnetically confined plasma region. The validity of the presented model was examined by various parametric studies, and the thrust performance and wall erosion rate of a laboratory model magnetic layer type Hall thruster was modeled for different operation conditions. The simulation results successfully reproduced the measurement results with typically less than 10% discrepancy without tuning any numerical parameters. It is also shown that the computational cost was reduced to the level that the Hall thruster fully kinetic lifetime simulation is feasible.« less

Hall mobility and photoconductivity in TlGaSeS crystals

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Gasanly, N. M.

2013-01-01

In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm-2, respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation.

Structures and properties of poly(3-alkylthiophene) thin-films fabricated though vapor-phase polymerization.

PubMed

Back, Ji-Woong; Song, Eun-Ah; Lee, Keum-Joo; Lee, Youn-Kyung; Hwang, Chae-Ryong; Jo, Sang-Hyun; Jung, Woo-Gwang; Kim, Jin-Yeol

2012-02-01

Organic semiconducting polymer thin-films of 3-hexylthiophene, 3-octylthiophene, 3-decylthiophene, containing highly oriented crystal were fabricated by gas-phase polymerization using the CVD technique. These poly(3-alkylthiophene) films had a crystallinity up to 80%, and possessed a Hall mobility up to 10 cm2/Vs. The degree of crystalinity and the mobility values increased as the alkyl chain length increased. The crystal structure of the polymers was composed of stacked layers constructed by a side-by-side arrangement of alkyl chains and in-plane pi-pi stacking. These thin films are capable of being applied to organic electronics as the active materials used in thin-film transistors and organic photovoltaic cells.

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

NASA Astrophysics Data System (ADS)

Takahashi, H.; Okazaki, R.; Yasui, Y.; Terasaki, I.

2011-11-01

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10-4 ppm/unit cell and the mobility increases from 2000 to 28 000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

Non-volatile magnetic random access memory

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

1994-01-01

Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

Weak antilocalization of composite fermions in graphene

NASA Astrophysics Data System (ADS)

Laitinen, Antti; Kumar, Manohar; Hakonen, Pertti J.

2018-02-01

We demonstrate experimentally that composite fermions in monolayer graphene display weak antilocalization. Our experiments deal with fractional quantum Hall (FQH) states in high-mobility, suspended graphene Corbino disks in the vicinity of ν =1 /2 . We find a strong temperature dependence of conductivity σ away from half filling, which is consistent with the expected electron-electron interaction-induced gaps in the FQH state. At half filling, however, the temperature dependence of conductivity σ (T ) becomes quite weak, as anticipated for a Fermi sea of composite fermions, and we find a logarithmic dependence of σ on T . The sign of this quantum correction coincides with the weak antilocalization of graphene composite fermions, indigenous to chiral Dirac particles.

Dephasing of LO-phonon-plasmon hybrid modes in n-type GaAs

NASA Astrophysics Data System (ADS)

Vallée, F.; Ganikhanov, F.; Bogani, F.

1997-11-01

The relaxation dynamics of coherent phononlike LO-phonon-plasmon hybrid modes is investigated in n-doped GaAs using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements performed for different crystal temperatures in the range 10-300 K as a function of the electron density injected by doping show a large reduction of the hybrid mode dephasing time compared to the bare LO-phonon one for densities larger than 1016 cm-3. The results are interpreted in terms of coherent decay of the LO-phonon-plasmon mixed mode in the weak-coupling regime and yield information on the plasmon and electron relaxation. The estimated average electron momentum relaxation times are smaller than those deduced from Hall mobility measurements, as expected from our theoretical model.

Hall viscosity and electromagnetic response of electrons in graphene

NASA Astrophysics Data System (ADS)

Sherafati, Mohammad; Principi, Alessandro; Vignale, Giovanni

The Hall viscosity is a dissipationless component of the viscosity tensor of an electron liquid with broken time- reversal symmetry, such as a two-dimensional electron gas (2DEG) in the quantum Hall state. Similar to the Hall conductivity, the Hall viscosity is an anomalous transport coefficient; however, while the former is connected with the current response, the latter stems from the stress response to a geometric deformation. For a Galilean-invariant system such as 2DEG, the current density is indeed the generator of the geometric deformation: therefore a connection between the Hall connectivity and viscosity is expected and by now well established. In the case of graphene, a non-Galilean-invariant system, the existence of such a connection is far from obvious, as the current operator is essentially different from the momentum operator. In this talk, I will first present our results of the geometric Hall viscosity of electrons in single-layer graphene. Then, from the expansion of the nonlocal Hall conductivity for small wave vectors, I demonstrate that, in spite of the lack of Galilean invariance, an effective mass can be defined such that the relationship between the Hall conductivity and the viscosity retains the form it has in Galilean-invariant systems, not only for a large number of occupied Landau levels, but also, with very high accuracy, for the undoped system.

Analytic non-Maxwellian electron velocity distribution function in a Hall discharge plasma

NASA Astrophysics Data System (ADS)

Shagayda, Andrey; Tarasov, Alexey

2017-10-01

The electron velocity distribution function in the low-pressure discharges with the crossed electric and magnetic fields, which occur in magnetrons, plasma accelerators, and Hall thrusters with a closed electron drift, is not Maxwellian. A deviation from equilibrium is caused by a large electron mean free path relative to the Larmor radius and the size of the discharge channel. In this study, we derived in the relaxation approximation the analytical expression of the electron velocity distribution function in a weakly ionized Lorentz plasma with the crossed electric and magnetic fields in the presence of the electron density and temperature gradients in the direction of the electric field. The solution was obtained in the stationary approximation far from boundary surfaces, when diffusion and mobility are determined by the classical effective collision frequency of electrons with ions and atoms. The moments of the distribution function including the average velocity, the stress tensor, and the heat flux were calculated and compared with the classical hydrodynamic expressions. It was shown that a kinetic correction to the drift velocity stems from a contribution of the off-diagonal component of the stress tensor. This correction becomes essential if the drift velocity in the crossed electric and magnetic fields would be comparable to the thermal velocity of electrons. The electron temperature has three different components at a nonzero effective collision frequency and two different components in the limit when the collision frequency tends to zero. It is shown that, in the presence of ionization collisions, the components of the heat flux have additives that are not related to the temperature gradient, and arise because of the electron drift.

Obstacles using amorphous materials for volume applications

NASA Astrophysics Data System (ADS)

Kiessling, Albert; Reininger, Thomas

2012-10-01

This contribution is especially focussed on the attempt to use amorphous or nanocrystalline metals in position sensor applications and to describe the difficulties and obstacles encountered in coherence with the development of appropriate industrial high volume series products in conjunction with the related quality requirements. The main motivation to do these investigations was to beat the generally known sensors especially silicon based Hall-sensors as well as AMR- and GMR-sensors - well known from mobile phones and electronic storage devices like hard discs and others - in terms of cost-effectiveness and functionality.

Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

NASA Astrophysics Data System (ADS)

Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

2012-02-01

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

Large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

Observation of the fractional quantum Hall effect in graphene.

PubMed

Bolotin, Kirill I; Ghahari, Fereshte; Shulman, Michael D; Stormer, Horst L; Kim, Philip

2009-11-12

When electrons are confined in two dimensions and subject to strong magnetic fields, the Coulomb interactions between them can become very strong, leading to the formation of correlated states of matter, such as the fractional quantum Hall liquid. In this strong quantum regime, electrons and magnetic flux quanta bind to form complex composite quasiparticles with fractional electronic charge; these are manifest in transport measurements of the Hall conductivity as rational fractions of the elementary conductance quantum. The experimental discovery of an anomalous integer quantum Hall effect in graphene has enabled the study of a correlated two-dimensional electronic system, in which the interacting electrons behave like massless chiral fermions. However, owing to the prevailing disorder, graphene has so far exhibited only weak signatures of correlated electron phenomena, despite intense experimental and theoretical efforts. Here we report the observation of the fractional quantum Hall effect in ultraclean, suspended graphene. In addition, we show that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap. These newly discovered quantum states offer the opportunity to study correlated Dirac fermions in graphene in the presence of large magnetic fields.

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

PubMed

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Oveshnikov, L. N.; Lunin, R. A.

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect aremore » studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.« less

Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots

NASA Astrophysics Data System (ADS)

Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew

2011-03-01

We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.

Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound

NASA Astrophysics Data System (ADS)

Olikh, Ya. M.; Tymochko, M. D.; Olikh, O. Ya.; Shenderovsky, V. A.

2018-05-01

We studied the temperature dependence (77-300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1-x Zn x Te single crystals (N Cl ≈ 1024 m-3; x = 0; 0.04) with different dislocation density (0.4-5.1) × 1010 m-2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μ H(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.

2. Historic American Buildings Survey E. W. Russell, Photographer, April ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. Historic American Buildings Survey E. W. Russell, Photographer, April 2, 1935 OLD MESS HALL AND BARRACKS E. SIDE OF BOTH BLDGS. N. END OF MESS HALL - Mount Vernon Arsenal, Old Barracks Building, Old Saint Stephens Road (County Road 96), Mount Vernon, Mobile County, AL

1. Historic American Buildings Survey E. W. Russell, Photographer, April ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

1. Historic American Buildings Survey E. W. Russell, Photographer, April 2, 1935 N. AND W. SIDE OF BLDG. USED AS MESS HALL E. OF BARRACK BLDG. - Mount Vernon Arsenal, Old Mess Hall, Old Saint Stephens Road (County Road 96), Mount Vernon, Mobile County, AL

Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

NASA Astrophysics Data System (ADS)

Tang, Chi; Cheng, Bin; Aldosary, Mohammed; Wang, Zhiyong; Jiang, Zilong; Watanabe, K.; Taniguchi, T.; Bockrath, Marc; Shi, Jing

2018-02-01

Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches ¼ of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems.

Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

NASA Astrophysics Data System (ADS)

Gusev, G. M.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Portal, J. C.

2010-04-01

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy≈0 and in a minimum of diagonal conductivity σxx at ν=νp-νn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

NASA Astrophysics Data System (ADS)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

NASA Astrophysics Data System (ADS)

Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

2016-04-01

The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

Precision Electron Beam Polarimetry in Hall C at Jefferson Lab

NASA Astrophysics Data System (ADS)

Gaskell, David

2013-10-01

The electron beam polarization in experimental Hall C at Jefferson Lab is measured using two devices. The Hall-C/Basel Møller polarimeter measures the beam polarization via electron-electron scattering and utilizes a novel target system in which a pure iron foil is driven to magnetic saturation (out of plane) using a superconducting solenoid. A Compton polarimeter measures the polarization via electron-photon scattering, where the photons are provided by a high-power, CW laser coupled to a low gain Fabry-Perot cavity. In this case, both the Compton-scattered electrons and backscattered photons provide measurements of the beam polarization. Results from both polarimeters, acquired during the Q-Weak experiment in Hall C, will be presented. In particular, the results of a test in which the Møller and Compton polarimeters made interleaving measurements at identical beam currents will be shown. In addition, plans for operation of both devices after completion of the Jefferson Lab 12 GeV Upgrade will also be discussed.

Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet.

PubMed

Hennel, Szymon; Braem, Beat A; Baer, Stephan; Tiemann, Lars; Sohi, Pirouz; Wehrli, Dominik; Hofmann, Andrea; Reichl, Christian; Wegscheider, Werner; Rössler, Clemens; Ihn, Thomas; Ensslin, Klaus; Rudner, Mark S; Rosenow, Bernd

2016-04-01

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

Photo-excited zero-resistance states in quasi-two-dimensional GaAs / Al xGa 1- xAs devices

NASA Astrophysics Data System (ADS)

Mani, R. G.

2007-12-01

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.

Design and Implementation of a Hall Effect Sensor Array Applied to Recycling Hard Drive Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kisner, Roger; Lenarduzzi, Roberto; Killough, Stephen M

Rare earths are an important resource for many electronic components and technologies. Examples abound including Neodymium magnets used in mobile devices and computer hard drives (HDDs), and a variety of renewable energy technologies (e.g., wind turbines). Approximately 21,000 metric tons of Neodymium is processed annually with less than 1% being recycled. An economic system to assist in the recycling of magnet material from post-consumer goods, such as Neodymium Iron Boron magnets commonly found in hard drives is presented. A central component of this recycling measurement system uses an array of 128 Hall Effect sensors arranged in two columns to detectmore » the magnetic flux lines orthogonal to the HDD. Results of using the system to scan planar shaped objects such as hard drives to identify and spatially locate rare-earth magnets for removal and recycling from HDDs are presented. Applications of the sensor array in other identification and localization of magnetic components and assemblies will be presented.« less

High quality of InAsSb epilayer with cutoff wavelength longer than 10 μm grown on GaAs by the modified LPE technique

NASA Astrophysics Data System (ADS)

Hu, S. H.; Sun, C. H.; Sun, Y.; Ge, J.; Wang, R.; Wu, J.; Wang, Q. W.; Dai, N.

2009-04-01

The InAsSb epilayers with a cutoff wavelength of 11.5 μm were successfully grown on highly lattice-mismatched semi-insulating (1 0 0) GaAs substrate by the modified liquid phase epitaxy (LPE) technique. Fourier transform infrared (FTIR) transmission spectrum revealed a strong band gap narrowing for this alloy. The electrical properties were investigated by the Van der Pauw measurements at 300 and 77 K. InAsSb epilayers showed high Hall mobilities being 11,800 cm 2/V s at room temperature (RT). After an annealing treament for 10 h, the electron mobility at 77 K were improved from 1730 cm 2/V s (prior to annealing) to 13,470 cm 2/V s. Wet etching was used to display the surface etch pits prior to and after annealing treatment, showing that the mobility improvement was due to the reduction of the etch pits density.

Observation of a superfluid Hall effect

PubMed Central

Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

2012-01-01

Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

25. Historic American Buildings Survey E. W. Russell, Photographer, June ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

25. Historic American Buildings Survey E. W. Russell, Photographer, June 13, 1935 HALL, S. SECTION OF BUILDING, THIRD FLOOR, SHOWING SKYLIGHT IN ROOF - Southern Hotel, 53-65 Water Street, Mobile, Mobile County, AL

76 FR 34099 - National Register of Historic Places; Notification of Pending Nominations and Related Actions

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-10

... Recreation Center, 1361 Dr. Martin Luther King, Jr. Ave., Mobile, 11000407 International Longshoreman's Association Hall, 505 Dr. Martin Luther King, Jr. Ave., Mobile, 11000408 KANSAS Butler County Yingling...

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

NASA Technical Reports Server (NTRS)

Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

1991-01-01

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Epitaxial Graphene: A New Material for Electronics

NASA Astrophysics Data System (ADS)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks.

PubMed

Osada, Minoru; Sasaki, Takayoshi

2012-01-10

Two-dimensional (2D) nanosheets, which possess atomic or molecular thickness and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The recent development of methods for manipulating graphene (carbon nanosheet) has provided new possibilities and applications for 2D systems; many amazing functionalities such as high electron mobility and quantum Hall effects have been discovered. However, graphene is a conductor, and electronic technology also requires insulators, which are essential for many devices such as memories, capacitors, and gate dielectrics. Along with graphene, inorganic nanosheets have thus increasingly attracted fundamental research interest because they have the potential to be used as dielectric alternatives in next-generation nanoelectronics. Here, we review the progress made in the properties of dielectric nanosheets, highlighting emerging functionalities in electronic applications. We also present a perspective on the advantages offered by this class of materials for future nanoelectronics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

NASA Astrophysics Data System (ADS)

Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

2014-06-01

We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

Experiments on Quantum Hall Topological Phases in Ultra Low Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Rui-Rui

2015-02-14

This project is to cool electrons in semiconductors to extremely low temperatures and to study new states of matter formed by low-dimensional electrons (or holes). At such low temperatures (and with an intense magnetic field), electronic behavior differs completely from ordinary ones observed at room temperatures or regular low temperature. Studies of electrons at such low temperatures would open the door for fundamental discoveries in condensed matter physics. Present studies have been focused on topological phases in the fractional quantum Hall effect in GaAs/AlGaAs semiconductor heterostructures, and the newly discovered (by this group) quantum spin Hall effect in InAs/GaSb materials.more » This project consists of the following components: 1) Development of efficient sample cooling techniques and electron thermometry: Our goal is to reach 1 mK electron temperature and reasonable determination of electron temperature; 2) Experiments at ultra-low temperatures: Our goal is to understand the energy scale of competing quantum phases, by measuring the temperature-dependence of transport features. Focus will be placed on such issues as the energy gap of the 5/2 state, and those of 12/5 (and possible 13/5); resistive signature of instability near 1/2 at ultra-low temperatures; 3) Measurement of the 5/2 gaps in the limit of small or large Zeeman energies: Our goal is to gain physics insight of 5/2 state at limiting experimental parameters, especially those properties concerning the spin polarization; 4) Experiments on tuning the electron-electron interaction in a screened quantum Hall system: Our goal is to gain understanding of the formation of paired fractional quantum Hall state as the interaction pseudo-potential is being modified by a nearby screening electron layer; 5) Experiments on the quantized helical edge states under a strong magnetic field and ultralow temperatures: our goal is to investigate both the bulk and edge states in a quantum spin Hall insulator under time-reversal symmetry-broken conditions.« less

An origin of good electrical conduction in La{sub 4}BaCu{sub 5}O{sub 13+δ}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Daiki; Asai, Shinichiro; Terasaki, Ichiro, E-mail: terra@cc.nagoya-u.ac.jp

2015-07-21

We have prepared a set of polycrystalline samples of the metallic copper oxide La{sub 4}BaCu{sub 5−x}Co{sub x}O{sub 13+δ} (0 ≤ x ≤ 0.35) and have measured the resistivity from 4 to 800 K. All the resistivities show metallic temperature dependence with a small magnitude less than 2 mΩ cm at 800 K, indicating that the metallic conduction is robust against impurities. The robust metallic conduction further suggests that this class of oxide is a promising candidate for electrical leads at high temperature, which might replace platinum. A detailed measurement and analysis on the Hall resistivity have revealed that at least two components are responsible for the electricalmore » conduction, in which a large number of electrons of moderate mobility coexist with a much smaller number of holes of extremely high mobility. This large electron density well screens the impurity potential and retains the metallic conduction against 7% impurity doping.« less

Observation of the quantum Hall effect in δ-doped SrTiO3

PubMed Central

Matsubara, Y.; Takahashi, K. S.; Bahramy, M. S.; Kozuka, Y.; Maryenko, D.; Falson, J.; Tsukazaki, A.; Tokura, Y.; Kawasaki, M.

2016-01-01

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems. PMID:27228903

Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

NASA Astrophysics Data System (ADS)

Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

2018-02-01

A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

NASA Technical Reports Server (NTRS)

Peng, C. K.; Sinha, S.; Morkoc, H.

1987-01-01

Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verona, C.; Marinelli, Marco; Verona-Rinati, G.

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb{sub 2}O{sub 5}, WO{sub 3}, V{sub 2}O{sub 5}, and MoO{sub 3}. The low electron affinity Al{sub 2}O{sub 3} was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron acceptingmore » materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 10{sup 13} cm{sup −2}, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 10{sup 13} cm{sup −2} and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.« less

High-Temperature Hall-Effect Apparatus

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R. A.; Chemielewski, A. B.; Parker, J. B.; Zoltan, A.

1985-01-01

Compact furnace minimizes thermal gradients and electrical noise. Semiautomatic Hall-effect apparatus takes measurements on refractory semiconductors at temperatures as high as 1,100 degrees C. Intended especially for use with samples of high conductivity and low chargecarrier mobility that exhibit low signal-to-noise ratios, apparatus carefully constructed to avoid spurious electromagnetic and thermoelectric effects that further degrade measurements.

Characterization of III-V Semiconductors.

DTIC Science & Technology

1981-04-01

Conversion Photoluminescence InP Hall Effect Mass Spectroscopy Ion Implantation Photoconductivity Donor-Acceptor 20. ABSTRACT (Continue on reverse side If...Characteristiss .. 72 10.0 FAR INFRARED STUDIES IN GaAs. ....................... 76I11.0 SPARK-SOURCE MASS SPECTROSCOPY IN GaAs...concen- tration, as measured by spark-source mass spectroscopy (SSMS), and the Hall 7 mobility. However, we found that, unfortunately, commercially

Gallium nitride optoelectronic devices

NASA Technical Reports Server (NTRS)

Chu, T. L.; Chu, S. S.

1972-01-01

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Electron dynamics in Hall thruster

NASA Astrophysics Data System (ADS)

Marini, Samuel; Pakter, Renato

2015-11-01

Hall thrusters are plasma engines those use an electromagnetic fields combination to confine electrons, generate and accelerate ions. Widely used by aerospace industries those thrusters stand out for its simple geometry, high specific impulse and low demand for electric power. Propulsion generated by those systems is due to acceleration of ions produced in an acceleration channel. The ions are generated by collision of electrons with propellant gas atoms. In this context, we can realize how important is characterizing the electronic dynamics. Using Hamiltonian formalism, we derive the electron motion equation in a simplified electromagnetic fields configuration observed in hall thrusters. We found conditions those must be satisfied by electromagnetic fields to have electronic confinement in acceleration channel. We present configurations of electromagnetic fields those maximize propellant gas ionization and thus make propulsion more efficient. This work was supported by CNPq.

Revealing topological Dirac fermions at the surface of strained HgTe thin films via quantum Hall transport spectroscopy

NASA Astrophysics Data System (ADS)

Thomas, C.; Crauste, O.; Haas, B.; Jouneau, P.-H.; Bäuerle, C.; Lévy, L. P.; Orignac, E.; Carpentier, D.; Ballet, P.; Meunier, T.

2017-12-01

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides insights in the quantum Hall effect of topological insulator (TI) slabs, in the crossover regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore circuit functionalities in spintronics and quantum nanoelectronics.

Electron spin polarization by isospin ordering in correlated two-layer quantum Hall systems.

PubMed

Tiemann, L; Wegscheider, W; Hauser, M

2015-05-01

Enhancement of the electron spin polarization in a correlated two-layer, two-dimensional electron system at a total Landau level filling factor of 1 is reported. Using resistively detected nuclear magnetic resonance, we demonstrate that the electron spin polarization of two closely spaced two-dimensional electron systems becomes maximized when interlayer Coulomb correlations establish spontaneous isospin ferromagnetic order. This correlation-driven polarization dominates over the spin polarizations of competing single-layer fractional quantum Hall states under electron density imbalances.

A fully implicit Hall MHD algorithm based on the ion Ohm's law

NASA Astrophysics Data System (ADS)

Chacón, Luis

2010-11-01

Hall MHD is characterized by extreme hyperbolic numerical stiffness stemming from fast dispersive waves. Implicit algorithms are potentially advantageous, but of very difficult efficient implementation due to the condition numbers of associated matrices. Here, we explore the extension of a successful fully implicit, fully nonlinear algorithm for resistive MHD,ootnotetextL. Chac'on, Phys. Plasmas, 15 (2008) based on Jacobian-free Newton-Krylov methods with physics-based preconditioning, to Hall MHD. Traditionally, Hall MHD has been formulated using the electron equation of motion (EOM) to determine the electric field in the plasma (the so-called Ohm's law). However, given that the center-of-mass EOM, the ion EOM, and the electron EOM are linearly dependent, one could equivalently employ the ion EOM as the Ohm's law for a Hall MHD formulation. While, from a physical standpoint, there is no a priori advantage for using one Ohm's law vs. the other, we argue in this poster that there is an algorithmic one. We will show that, while the electron Ohm's law prevents the extension of the resistive MHD preconditioning strategy to Hall MHD, an ion Ohm's law allows it trivially. Verification and performance numerical results on relevant problems will be presented.

Hall-Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors

NASA Astrophysics Data System (ADS)

Chang, Jui-Fen; Sakanoue, Tomo; Olivier, Yoann; Uemura, Takafumi; Dufourg-Madec, Marie-Beatrice; Yeates, Stephen G.; Cornil, Jérôme; Takeya, Jun; Troisi, Alessandro; Sirringhaus, Henning

2011-08-01

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

Magnetic Reconnection and Modification of the Hall Physics Due to Cold Ions at the Magnetopause

NASA Technical Reports Server (NTRS)

Andre, M.; Li, W.; Toldeo-Redondo, S.; Khotyaintsev, Yu. V.; Vaivads, A.; Graham, D. B.; Norgren, C.; Burch, J.; Lindqvist, P.-A.; Marklund, G.;

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Liu, Yang; Magill, B. A.; Moon, B. H.; Engel, L. W.; Shayegan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.

2014-06-01

In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

DOE PAGES

Burmistrova, Polina V.; Zakharov, Dmitri N.; Favaloro, Tela; ...

2015-03-14

Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibitsmore » the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.« less

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Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

PubMed

Jo, Min Sung; Sadasivam, Karthikeyan Giri; Tawfik, Wael Z; Yang, Seung Bea; Lee, Jung Ju; Ha, Jun Seok; Moon, Young Boo; Ryu, Sang Wan; Lee, June Key

2013-01-01

n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.

Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chida, K.; Yamauchi, Y.; Arakawa, T.

2013-12-04

We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

Magnetometry of micro-magnets with electrostatically defined Hall bars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent

2015-11-30

Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large currentmore » density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.« less

Indium antimonide quantum well structures for electronic device applications

NASA Astrophysics Data System (ADS)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

Unconventional topological Hall effect in skyrmion crystals caused by the topology of the lattice

NASA Astrophysics Data System (ADS)

Göbel, Börge; Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

2017-03-01

The hallmark of a skyrmion crystal (SkX) is the topological Hall effect (THE). In this article we predict and explain an unconventional behavior of the topological Hall conductivity in SkXs. In simple terms, the spin texture of the skyrmions causes an inhomogeneous emergent magnetic field whose associated Lorentz force acts on the electrons. By making the emergent field homogeneous, the THE is mapped onto the quantum Hall effect (QHE). Consequently, each electronic band of the SkX is assigned to a Landau level. This correspondence of THE and QHE allows us to explain the unconventional behavior of the THE of electrons in SkXs. For example, a skyrmion crystal on a triangular lattice exhibits a quantized topological Hall conductivity with steps of 2 .e2/h below and with steps of 1 .e2/h above the van Hove singularity. On top of this, the conductivity shows a prominent sign change at the van Hove singularity. These unconventional features are deeply connected to the topology of the structural lattice.

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tangi, Malleswararao; De, Arpan; Ghatak, Jay

2016-05-28

A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-Vmore » measurements that yield mobility values as high as ≈4453 cm{sup 2}/V s and the carrier concentration of ≈1.1 × 10{sup 17} cm{sup −3}, which are unprecedented in the literature for comparable InN NR diameters.« less

Non-Intrusive, Time-Resolved Hall Thruster Near-Field Electron Temperature Measurements

DTIC Science & Technology

2011-08-01

With the growing interest in Hall thruster technology, comes the need to fully characterize the plasma dynamics that determine performance. Of...instabilities characteristic of Hall thruster behavior, time resolved techniques must be developed. This study presents a non-intrusive method of

Spray deposition of highly transparent fluorine doped cadmium oxide thin films

NASA Astrophysics Data System (ADS)

Deokate, R. J.; Pawar, S. M.; Moholkar, A. V.; Sawant, V. S.; Pawar, C. A.; Bhosale, C. H.; Rajpure, K. Y.

2008-01-01

The cadmium oxide (CdO) and F:CdO films have been deposited by spray pyrolysis method using cadmium acetate and ammonium fluoride as precursors for Cd and F ions, respectively. The effect of temperature and F doping on the structural, morphological, optical and Hall effect properties of sprayed CdO thin films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption and electrical measurement techniques. TGA and DTA studies, indicates the formation of CdO by decomposition of cadmium acetate after 250 °C. XRD patterns reveal that samples are polycrystalline with cubic structure and exhibits (2 0 0) preferential orientation. Considerable broading of (2 0 0) peak, simultaneous shifting of corresponding Bragg's angle have been observed with respect to F doping level. SEM and AFM show the heterogeneous distribution of cubical grains all over the substrate, which are randomly distributed. F doping shifts the optical gap along with the increase in the transparency of CdO films. The Hall effect measurement indicates that the resistivity and mobility decrease up to 4% F doping.

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

PubMed

Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

2012-11-01

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

In Defense of Field Trips: A Conversation with Educators from an Extraordinary Alabama Public School

ERIC Educational Resources Information Center

von Zastrow, Claus

2010-01-01

People looking for a public school Cinderella story need look no further than George Hall Elementary in Mobile, Alabama. The once struggling school, which serves mostly low-income children, now boasts state math and reading test scores most wealthy suburban schools would be proud of. George Hall did not have to sacrifice all but the basics to get…

Hall effect at a tunable metal-insulator transition

NASA Astrophysics Data System (ADS)

Teizer, W.; Hellman, F.; Dynes, R. C.

2003-03-01

Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient R0 is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. R0 diverges at the metal-insulator transition, and displays critical behavior with exponent -1 [R0˜(H-HC)-1]. This dependence is interpreted as a linear decrease in the density of mobile carriers n˜R-10˜H-HC, indicative of the dominant influence of interaction effects.

Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin

New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed:more » they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.« less

Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

2014-11-15

Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznetsov, Vladimir L.; Vai, Alex T.; Edwards, Peter P., E-mail: peter.edwards@chem.ox.ac.uk

2015-12-07

Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grainmore » boundary and electron-phonon scattering in samples with different nominal silicon concentrations.« less

Numerical analysis of azimuthal rotating spokes in a crossed-field discharge plasma

NASA Astrophysics Data System (ADS)

Kawashima, R.; Hara, K.; Komurasaki, K.

2018-03-01

Low-frequency rotating spokes are obtained in a cross-field discharge plasma using two-dimensional numerical simulations. A particle-fluid hybrid model is used to model the plasma flow in a configuration similar to a Hall thruster. It has been reported that the drift-diffusion approximation for an electron fluid results in an ill-conditioned matrix when solving for the potential because of the differences in the electron mobilities across the magnetic field and in the direction of the E × B drift. In this paper, we employ a hyperbolic approach that enables stable calculation, namely, better iterative convergence of the electron fluid model. Our simulation results show a coherent rotating structure propagating in the E × B direction with a phase velocity of 2500 m s‑1, which agrees with experimental data. The phase velocity obtained from the numerical simulations shows good agreement with that predicted by the dispersion relation of the gradient drift instability.

Pressure-induced multiband superconductivity in pyrite PtB i2 with perfect electron-hole compensation

NASA Astrophysics Data System (ADS)

Chen, Xuliang; Shao, Dexi; Gu, Chuanchuan; Zhou, Yonghui; An, Chao; Zhou, Ying; Zhu, Xiangde; Chen, Tong; Tian, Mingliang; Sun, Jian; Yang, Zhaorong

2018-05-01

We report on the discovery of pressure-induced superconductivity in the compensated semimetal pyrite PtB i2 , which exhibits extreme magnetoresistance (XMR) and nontrivial band structure at ambient pressure. The appearance of superconductivity, first observed at PC˜13 GPa with an onset critical temperature TC of ˜2.2 K , is accompanied by a pronounced enhancement of the density of electrons and holes based on Hall-effect measurements. Upon further compression, TC remains almost unchanged up to 50.0 GPa; remarkably, the perfect electron-hole compensation still holds, while the carrier mobility greatly reduces. No evident trace of structural phase transitions is detected through synchrotron x-ray diffraction over the measured pressure range of 1.5-51.2 GPa. These results highlight a multiband characteristic of the observed superconductivity, making pyrite PtB i2 unique among the compensated XMR materials where the pressure-induced superconductivity usually links to structural transitions and carrier imbalance.

Superconductivity in metal coated graphene

NASA Astrophysics Data System (ADS)

Uchoa, Bruno; Castro Neto, Antonio

2007-03-01

Graphene, a single atomic layer of graphite, is a two dimensional (2D) zero gap insulator with a high electronic mobility between nearest neighbor carbon sites. The unique electronic properties of graphene, from the semi-metallic behavior to the observation of an anomalous quantum Hall effect and a zero field quantized minimum of conductivity derive from the relativistic nature of its quasiparticles. By doping graphene, it behaves in several aspects as a conventional Fermi liquid, where electrons may form Cooper pairs by coupling with a bosonic mode. In this talk, we develop a mean-field phenomenology of superconductivity in a honeycomb lattice. We predict the possibility of two distinct phases, a singlet s-wave phase and a novel p+ip wave phase in the singlet channel. At half filling, the p+ip phase is gapless and superconductivity is a hidden order. We propose a few possible sources of Cooper pairing instability in graphene coated with alkaline and transition metals, and similar low dimensional graphene based devices.

Angular phase shift in polarization-angle dependence of microwave-induced magnetoresistance oscillations

NASA Astrophysics Data System (ADS)

Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R. G.; Reichl, C.; Wegscheider, W.

2016-12-01

We examine the microwave frequency (f ) variation of the angular phase shift, θ0, observed in the polarization-angle dependence of microwave-induced magnetoresistance oscillations in a high-mobility GaAs/AlGaAs two-dimensional electron system. By fitting the diagonal resistance Rx x versus θ plots to an empirical cosine square law, we extract θ0 and trace its quasicontinuous variation with f . The results suggest that the overall average of θ0 extracted from Hall bar device sections with length-to-width ratios of L /W =1 and 2 is the same. We compare the observations with expectations arising from the "ponderomotive force" theory for microwave radiation-induced transport phenomena.

Structural and electrical properties of In-implanted Ge

DOE PAGES

Feng, R.; Kremer, F.; Sprouster, D. J.; ...

2015-10-22

Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated withmore » the substitutional In fraction.« less

Tracing Academic Literacies across Contemporary Literacy Sponsorscapes: Mobilities, Ideologies, Identities, and Technologies

ERIC Educational Resources Information Center

Wargo, Jon M.; De Costa, Peter I.

2017-01-01

Locating itself broadly within the "sociolinguistics of mobility" (Blommaert, 2014) and taking heed of Stornaiuolo and Hall's (2014) call to "trace resonance" in writing and literacies research, this article works to trace academic literacies across the emerging "literacy sponsorscapes" (Wargo, 2016a) of contemporary…

Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

NASA Astrophysics Data System (ADS)

Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

2018-03-01

We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

Transition in discharge plasma of Hall thruster type in presence of secondary electron emissive surface

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Yadrenkin, M. A.; Fomichev, V. P.

2017-11-01

Modification of the sheath structure near the emissive plate placed in magnetized DC discharge plasma of Hall thruster type was studied in the experiment and in kinetic simulations. The plate is made from Al2O3 which has enhanced secondary electron emission yield. The energetic electrons emitted by heated cathode provide the volume ionization and the secondary electron emission from the plate. An increase of the electron beam energy leads to an increase of the secondary electron generation, which initiates the transition in sheath structure over the emissive plate.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

NASA Astrophysics Data System (ADS)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

PubMed Central

Wu, Zefei; Xu, Shuigang; Lu, Huanhuan; Khamoshi, Armin; Liu, Gui-Bin; Han, Tianyi; Wu, Yingying; Lin, Jiangxiazi; Long, Gen; He, Yuheng; Cai, Yuan; Yao, Yugui; Zhang, Fan; Wang, Ning

2016-01-01

In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs. PMID:27651106

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

2015-05-11

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

Comment on "Effects of Magnetic Field Gradient on Ion Beam Current in Cylindrical Hall Ion Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitses, Y.; Smirnov A.; Fisch, N.J.

It is argued that the key difference of the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al. J. Appl. Phys., 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of Tang et al.

Measurements of dynamo electric field and momentum transport induced by fluctuations on HIST

NASA Astrophysics Data System (ADS)

Hirono, H.; Hanao, T.; Hyobu, T.; Ito, K.; Matsumoto, K.; Nakayama, T.; Kikuchi, Y.; Fukumoto, N.; Nagata, M.

2012-10-01

Coaxial Helicity injection (CHI) is an efficient current-drive method used in spheromak and spherical torus (ST) experiments. It is an important issue to investigate dynamo effect to explore CHI current drive mechanisms. To establish the dynamo model with two-fluid Hall effects, we verify the parallel mean-field Ohm's law balance. The spatial profiles of the MHD/Hall dynamo electric fields are measured by using Mach probe and Hall probe involving 3-axis magnetic pick-up coils. The MHD/Hall fluctuation-induced electromotive forces are large enough to sustain the mean toroidal current against the resistive decay. We have measured the electron temperature and the density with great accuracy by using a new electrostatic probe with voltage sweeping. The result shows that the electron temperature is high in the core region and low in the central open flux column (OFC), and the electron density is highest in the OFC region. The Hall dynamo becomes more dominant in a lower density region compared to the MHD dynamo. In addition, the fluctuation-induced Maxwell and Reynolds stresses are calculated to examine the fast radial transport of momentum from the OFC to the core region during the dynamo drive.

Study on the influences of ionization region material arrangement on Hall thruster channel discharge characteristics

NASA Astrophysics Data System (ADS)

Xiang, HU; Ping, DUAN; Jilei, SONG; Wenqing, LI; Long, CHEN; Xingyu, BIAN

2018-02-01

There exists strong interaction between the plasma and channel wall in the Hall thruster, which greatly affects the discharge performance of the thruster. In this paper, a two-dimensional physical model is established based on the actual size of an Aton P70 Hall thruster discharge channel. The particle-in-cell simulation method is applied to study the influences of segmented low emissive graphite electrode biased with anode voltage on the discharge characteristics of the Hall thruster channel. The influences of segmented electrode placed at the ionization region on electric potential, ion number density, electron temperature, ionization rate, discharge current and specific impulse are discussed. The results show that, when segmented electrode is placed at the ionization region, the axial length of the acceleration region is shortened, the equipotential lines tend to be vertical with wall at the acceleration region, thus radial velocity of ions is reduced along with the wall corrosion. The axial position of the maximal electron temperature moves towards the exit with the expansion of ionization region. Furthermore, the electron-wall collision frequency and ionization rate also increase, the discharge current decreases and the specific impulse of the Hall thruster is slightly enhanced.

An Inversion Method for Reconstructing Hall Thruster Plume Parameters from the Line Integrated Measurements (Preprint)

DTIC Science & Technology

2007-06-05

From - To) 05-06-2007 Technical Paper 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER An Inversion Method for Reconstructing Hall Thruster Plume...239.18 An Inversion Method for Reconstructing Hall Thruster Plume Parameters from Line Integrated Measurements (Preprint) Taylor S. Matlock∗ Jackson...dimensional estimate of the plume electron temperature using a published xenon collisional radiative model. I. Introduction The Hall thruster is a high

Edge mixing dynamics in graphene p–n junctions in the quantum Hall regime

PubMed Central

Matsuo, Sadashige; Takeshita, Shunpei; Tanaka, Takahiro; Nakaharai, Shu; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke

2015-01-01

Massless Dirac electron systems such as graphene exhibit a distinct half-integer quantum Hall effect, and in the bipolar transport regime co-propagating edge states along the p–n junction are realized. Additionally, these edge states are uniformly mixed at the junction, which makes it a unique structure to partition electrons in these edge states. Although many experimental works have addressed this issue, the microscopic dynamics of electron partition in this peculiar structure remains unclear. Here we performed shot-noise measurements on the junction in the quantum Hall regime as well as at zero magnetic field. We found that, in sharp contrast with the zero-field case, the shot noise in the quantum Hall regime is finite in the bipolar regime, but is strongly suppressed in the unipolar regime. Our observation is consistent with the theoretical prediction and gives microscopic evidence that the edge states are uniquely mixed along the p–n junction. PMID:26337445

Magnetic mirror effect in a cylindrical Hall thruster

NASA Astrophysics Data System (ADS)

Jiang, Yiwei; Tang, Haibin; Ren, Junxue; Li, Min; Cao, Jinbin

2018-01-01

For cylindrical Hall thrusters, the magnetic field geometry is totally different from that in conventional Hall thrusters. In this study, we investigate the magnetic mirror effect in a fully cylindrical Hall thruster by changing the number of iron rings (0-5), which surround the discharge channel wall. The plasma properties inside the discharge channel and plume area are simulated with a self-developed PIC-MCC code. The numerical results show significant influence of magnetic geometry on the electron confinement. With the number of rings increasing above three, the near-wall electron density gap is reduced, indicating the suppression of neutral gas leakage. The electron temperature inside the discharge channel reaches its peak (38.4 eV) when the magnetic mirror is strongest. It is also found that the thruster performance has strong relations with the magnetic mirror as the propellant utilisation efficiency reaches the maximum (1.18) at the biggest magnetic mirror ratio. Also, the optimal magnetic mirror improves the multi-charged ion dynamics, including the ion production and propellant utilisation efficiency.

Electronic Phenomena in Two-Dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Hart, Sean

In recent years, two-dimensional electron systems have played an integral role at the forefront of discoveries in condensed matter physics. These include the integer and fractional quantum Hall effects, massless electron physics in graphene, the quantum spin and quantum anomalous Hall effects, and many more. Investigation of these fascinating states of matter brings with it surprising new results, challenges us to understand new physical phenomena, and pushes us toward new technological capabilities. In this thesis, we describe a set of experiments aimed at elucidating the behavior of two such two-dimensional systems: the quantum Hall effect, and the quantum spin Hall effect. The first experiment examines electronic behavior at the edge of a two-dimensional electron system formed in a GaAs/AlGaAs heterostructure, under the application of a strong perpendicular magnetic field. When the ratio between the number of electrons and flux quanta in the system is tuned near certain integer or fractional values, the electrons in the system can form states which are respectively known as the integer and fractional quantum Hall effects. These states are insulators in the bulk, but carry gapless excitations at the edge. Remarkably, in certain fractional quantum Hall states, it was predicted that even as charge is carried downstream along an edge, heat can be carried upstream in a neutral edge channel. By placing quantum dots along a quantum Hall edge, we are able to locally monitor the edge temperature. Using a quantum point contact, we can locally heat the edge and use the quantum dot thermometers to detect heat carried both downstream and upstream. We find that heat can be carried upstream when the edge contains structure related to the nu = 2/3 fractional quantum Hall state. We further find that this fractional edge physics can even be present when the bulk is tuned to the nu = 1integer quantum Hall state. Our experiments also demonstrate that the nature of this fractional reconstruction can be tuned by modifying the sharpness of the confining potential at the edge. In the second set of experiments, we focus on an exciting new two-dimensional system known as a quantum spin Hall insulator. Realized in quantum well heterostructures formed by layers of HgTe and HgCdTe, this material belongs to a set of recently discovered topological insulators. Like the quantum Hall effect, the quantum spin Hall effect is characterized by an insulating bulk and conducting edge states. However, the quantum spin Hall effect occurs in the absence of an external magnetic field, and contains a pair of counter propagating edge states which are the time-reversed partners of one another. It was recently predicted that a Josephson junction based around one of these edge states could host a new variety of excitation called a Majorana fermion. Majorana fermions are predicted to have non-Abelian braiding statistics, a property which holds promise as a robust basis for quantum information processing. In our experiments, we place a section of quantum spin Hall insulator between two superconducting leads, to form a Josephson junction. By measuring Fraunhofer interference, we are able to study the spatial distribution of supercurrent in the junction. In the quantum spin Hall regime, this supercurrent becomes confined to the topological edge states. In addition to providing a microscopic picture of these states, our measurement scheme generally provides a way to investigate the edge structure of any topological insulator. In further experiments, we tune the chemical potential into the conduction band of the HgTe system, and investigate the behavior of Fraunhofer interference as a magnetic field is applied parallel to the plane of the quantum well. By theoretically analyzing the interference in a parallel field, we find that Cooper pairs in the material acquire a tunable momentum that grows with the magnetic field strength. This finite pairing momentum leads to the appearance of triplet pair correlations at certain locations within the junction, which we are able to control with the external magnetic field. Our measurements and analysis also provide a method to obtain information about the Fermi surface properties and spin-orbit coupling in two-dimensional materials.

Modeling Electron Transport within the Framework of Hydrodynamic Description of Hall Thrusters (Preprint)

DTIC Science & Technology

2008-06-16

Framework of Hydrodynamic Description of Hall Thrusters (Preprint) 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) M . keidar (The George...within the framework of hydrodynamic description of Hall thrusters (PREPRINT) M . Keidar 1 and L. Brieda 2 1) Department of Mechanical and...the electron current density: y yw y m ew y w z w ew dV V y kT mV kT e kT e kT m B E nj y )sin() 2 exp()exp()exp( 2 2 2 2 2/1 0 (2) In this case, a

Hall thruster with grooved walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Hong; Ning Zhongxi; Yu Daren

2013-02-28

Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less

Interactive Computer-Assisted Instruction in Acid-Base Physiology for Mobile Computer Platforms

ERIC Educational Resources Information Center

Longmuir, Kenneth J.

2014-01-01

In this project, the traditional lecture hall presentation of acid-base physiology in the first-year medical school curriculum was replaced by interactive, computer-assisted instruction designed primarily for the iPad and other mobile computer platforms. Three learning modules were developed, each with ~20 screens of information, on the subjects…

G. Stanley Hall, Child Study, and the American Public.

PubMed

Young, Jacy L

2016-01-01

In the final decades of the 19th century psychologist Granville Stanley Hall was among the most prominent pedagogical experts in the nation. The author explores Hall's carefully crafted persona as an educational expert, and his engagements with the American public, from 1880 to 1900, arguably the height of his influence. Drawing from accounts of Hall's lecture circuit in the popular press, a map of his talks across the nation is constructed to assess the geographic scope of his influence. These talks to educators on the psychology underlying childhood and pedagogy, and his views and research on child life more generally, were regularly discussed in newspapers and popular periodicals. The venues in which Hall's ideas were disseminated, discussed, and in some cases, dismissed are described. His efforts to mobilize popular support for, and assistance with, his research endeavors in child study are also discussed. Such efforts were controversial both within the burgeoning field of psychology and among the public. Through his various involvements in pedagogy, and concerted efforts to engage with the American public, Hall helped establish psychology's relevance to parenting and educational practices.

Current crowding mediated large contact noise in graphene field-effect transistors

PubMed Central

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-01-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices. PMID:27929087

Non-commutative Chern numbers for generic aperiodic discrete systems

NASA Astrophysics Data System (ADS)

Bourne, Chris; Prodan, Emil

2018-06-01

The search for strong topological phases in generic aperiodic materials and meta-materials is now vigorously pursued by the condensed matter physics community. In this work, we first introduce the concept of patterned resonators as a unifying theoretical framework for topological electronic, photonic, phononic etc (aperiodic) systems. We then discuss, in physical terms, the philosophy behind an operator theoretic analysis used to systematize such systems. A model calculation of the Hall conductance of a 2-dimensional amorphous lattice is given, where we present numerical evidence of its quantization in the mobility gap regime. Motivated by such facts, we then present the main result of our work, which is the extension of the Chern number formulas to Hamiltonians associated to lattices without a canonical labeling of the sites, together with index theorems that assure the quantization and stability of these Chern numbers in the mobility gap regime. Our results cover a broad range of applications, in particular, those involving quasi-crystalline, amorphous as well as synthetic (i.e. algorithmically generated) lattices.

Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I.

PubMed

Jun, Taehwan; Kim, Junghwan; Sasase, Masato; Hosono, Hideo

2018-03-01

Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm 2 V -1 s -1 is obtained, which is comparable with that of conventional n-type TAS. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current crowding mediated large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, T. Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

2016-12-01

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

DOE PAGES

Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; ...

2015-07-13

Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (E U)-as a function of the sputtering oxygen partialmore » pressure. We obtain an E U as low as 128 meV for films with the highest Hall mobility of 60 cm 2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm 2/Vs) exhibits a similar E U of 130 meV, while ITO (25 cm 2/Vs) presents a much larger E U of up to 270 meV. The high film quality, indicated by the low E U, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

Influence Of Secondary Electrons Produced From Plasma Material Interaction In Presence Of Crossed Electric And Magnetic Fields

NASA Astrophysics Data System (ADS)

Sawlani, Kapil; Herzog, Joshua M.; Kwak, Joowon; Foster, John

2012-10-01

The electron energy distribution function (EEDF) plays a very important role in determining thruster efficiency as it determines various gas phase reaction rates. In Hall thrusters, secondary electron emission derived from the interaction of energetic electrons with ceramic channel surfaces influence the overall shape of the EEDF as well as determine the potential difference between the plasma and wall. The role of secondary electrons on the discharge operation of Hall thrusters is poorly understood. Experimentally, determining this effect is even more taxing as the secondary electron yield (SEY) varies drastically based on many parameters such as incident electron energies, flux and impact angle, and also on the surface properties such as temperature and roughness. The electron transport is also affected by the profile of the magnetic field, which is not uniform across the length of the accelerating channel. The goal of this work is to map out the variation of the EEDF and potential profile in response to the controlled introduction of secondary electrons. This data is expected to serve as a tool to validate and improve existing numerical models by providing boundary conditions and SEY for various situations that are encountered in Hall thrusters.

Overview of Hall D Complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chudakov, Eugene A.

Hall D is a new experimental hall at Jefferson Lab, designed for experiments with a photon beam. The primary motivation for Hall D is the GlueX experiment [1,2], dedicated to meson spectroscopy. The Hall D complex consists of: An electron beam line used to extract the 5.5-pass electrons from the accelerator into the Tagger Hall. The designed beam energy is E e = 12 GeV;The Tagger Hall, where the electron beam passes through a thin radiator (~0.01% R.L.) and is deflected into the beam dump. The electrons that lost >30% of their energy in the radiator are detected with scintillatormore » hodoscopes providing a ~0.1% energy resolution for the tagged photons. Aligned diamond radiators allow to produce linearly polarized photons via the Coherent Bremsstrahlung. The beam dump is limited to 60 kW (5 µA at 12 GeV); The Collimator Cave contains a collimator for the photon beam and dipole magnets downstream in order to remove charged particles. The 3.4 mm diameter collimator, located about 75 m downstream of the radiator, selects the central cone of the photon beam increasing its average linear polarization, up to ~40%in the coherent peak at 9 GeV; Hall D contains several elements of the photon beam line, and themain spectrometer. A Pair Spectrometer consists of a thin converter, a dipole magnet, and a two-arm detector used to measure the energy spectrum of the photon beam. The main spectrometer is based on a 2-T superconducting solenoid, 4 m long and 1.85 m bore diameter. The liquid hydrogen target is located in the front part the solenoid. The charged tracks are detected with a set of drift chambers; photons are detected with two electromagnetic calorimeters. There are also scintillator hodoscopes for triggering and time-of-flight measurements. The spectrometer is nearly hermetic in an angular range of 1° < θ < 120 •. The momentum resolution is σ p /p ~ 1 ₋ ₋3% depending on the polar angle θ. The energy resolution of the electromagnetic calorimeters is about 7% at 1 GeV.« less

Extended Fenske-Hall LCAO MO Calculations for Mixed Methylene Dihalides

NASA Astrophysics Data System (ADS)

Ziemann, Hartmut; Paulun, Manfred

1988-10-01

The electronic structure of mixed methylene dihalides CH2XY (X, Y = F, Cl, Br. I) has been studied using extended Fenske-Hall LCAO MO method. The comparison with available photoelec­tron spectra confirmes previous assignments of all bands with binding energies <100 eV. The electronic structure changes occurring upon varying the halogen substituents are discussed.

Probing quantum Hall states with single-electron transistors at high magnetic fields

NASA Astrophysics Data System (ADS)

Gustafsson, Martin; Yankowitz, Matthew; Forsythe, Carlos; Zhu, Xiaoyang; Dean, Cory

The sequence of fractional quantum Hall states in graphene is not yet fully understood, largely due to disorder-induced limitations of conventional transport studies. Measurements of magnetotransport in other 2D crystals are further complicated by the difficulties in making ohmic contact to the materials. On the other hand, bulk electronic compressibility can provide clear signatures of the integer and fractional quantum Hall effects, does not require ohmic contact, and can be localized to regions of low disorder. The single-electron transistor (SET) is a suitable tool for such experiments due to its small size and high charge sensitivity, which allow electric fields penetrating the 2D electron system to be detected locally and with high fidelity. Here we report studies of exfoliated 2D van der Waals materials fully encapsulated in flakes of hexagonal boron nitride. SETs are fabricated lithographically on top of the encapsulation, yielding a structure which lends itself to experiments at high electric and magnetic fields. We demonstrate the method on monolayer graphene, where we observe fractional quantum Hall states at all filling factors ν = n / 3 up to n = 17 and extract their associated energy gaps for magnetic fields up to 31 tesla.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun

2016-05-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm2 V-1 s-1 at 300 K and 72 cm2 V-1 s-1 at 200 K were observed in lightly doped p-GaN.

Quasiparticle Aggregation in the Fractional Quantum Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-10-10

Quasiparticles in the Fractional Quantum Hall Effect behave qualitatively like electrons confined to the lowest landau level, and can do everything electrons can do, including condense into second generation Fractional Quantum Hall ground states. I review in this paper the reasoning leading to variational wavefunctions for ground state and quasiparticles in the 1/3 effect. I then show how two-quasiparticle eigenstates are uniquely determined from symmetry, and how this leads in a natural way to variational wavefunctions for composite states which have the correct densities (2/5, 2/7, ...). I show in the process that the boson, anyon and fermion representations for the quasiparticles used by Haldane, Halperin, and me are all equivalent. I demonstrate a simple way to derive Halperin`s multiple-valued quasiparticle wavefunction from the correct single-valued electron wavefunction. (auth)

A direct connection between quantum Hall plateaus and exact pair states in a 2D electron gas

NASA Astrophysics Data System (ADS)

Hai, Wenhua; Li, Zejun; Xiao, Kewen

2011-12-01

It is previously found that the two-dimensional (2D) electron-pair in a homogeneous magnetic field has a set of exact solutions for a denumerably infinite set of magnetic fields. Here we demonstrate that as a function of magnetic field a band-like structure of energy associated with the exact pair states exists. A direct and simple connection between the pair states and the quantum Hall effect is revealed by the band-like structure of the hydrogen "pseudo-atom". From such a connection one can predict the sites and widths of the integral and fractional quantum Hall plateaus for an electron gas in a GaAs-Al x Ga1- x As heterojunction. The results are in good agreement with the existing experimental data.

Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments

NASA Astrophysics Data System (ADS)

Hou, Minmin; Jain, Sambhav R.; So, Hongyun; Heuser, Thomas A.; Xu, Xiaoqing; Suria, Ateeq J.; Senesky, Debbie G.

2017-11-01

In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured intermittently over a 5 h duration using unpassivated and Al2O3-passivated AlGaN/GaN (with 3 nm GaN cap) van der Pauw test structures. The unpassivated AlGaN/GaN heterostructures annealed in air showed the smallest decrease (˜8%) in 2DEG electron mobility while Al2O3-passivated samples annealed in argon displayed the largest drop (˜70%) based on the Hall measurements. Photoluminescence and atomic force microscopy showed that minimal strain relaxation and surface roughness changes have occurred in the unpassivated samples annealed in air, while those with Al2O3 passivation annealed in argon showed significant microstructural degradations. This suggests that cracks developed in the samples annealed in air were healed by oxidation reactions. To further confirm this, Auger electron spectroscopy was conducted on the unpassivated samples after the anneal in air and results showed that extra surface oxides have been generated, which could act as a dislocation pinning layer to suppress the strain relaxation in AlGaN. On the other hand, similar 2DEG sheet densities were observed in passivated and unpassivated AlGaN/GaN samples at the end of the 5-h anneal in air or argon due to the combined impact of strain relaxation and changes in the ionized electronic states. The results support the use of unpassivated GaN-capped AlGaN/GaN heterostructures as the material platform for high-temperature electronics and sensors used in oxidizing environmental conditions.

From hopping to ballistic transport in graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Taychatanapat, Thiti

This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature. The second experiment examines electronic properties of Bernal-stacked trilayer graphene. Due to the low mobility of trilayer graphene on SiO 2substrates, we employ hexagonal boron nitride as a local substrate to improve its mobility. This led us to observe a quantum Hall effect with multiple Landau level crossings, proving the coexistence of massless and massive Dirac fermions in Bernal-stacked trilayer graphene. From the position of these crossing points in magnetic field and electron density, we can deduce the band parameters used to model its band structure. At high magnetic field, we observe broken symmetry states via Landau level splittings as well as crossings among these broken-symmetry states. In the third experiment, we investigate transverse magnetic focusing (TMF) in mono-, bi-, and tri-layer graphene. The ability to tune density allows us to electronically modify focal points and investigate TMF continuously from hole to electron regimes. This also allows us to observe the change in band structure of trilayer graphene as a function of applied electric field. Finally, we also observe TMF at room temperature in monolayer graphene which unambiguously proves the existence of ballistic transport at room temperature.

Evidence of Collisionless Shocks in a Hall Thruster Plume

DTIC Science & Technology

2003-04-25

Triple Langmuir probes and emissive probes are used to measure the electron number density, electron temperature, and plasma potential downstream of a low-power Hall thruster . The results show a high density plasma core with elevated electron temperature and plasma potential along the thruster centerline. These properties are believed to be due to collisionless shocks formed as a result of the ion/ion acoustic instability. A simple model is presented that shows the existence of a collisionless shock to be consistent with the observed phenomena.

Linear and nonlinear regimes of the 2-D Kelvin-Helmholtz/Tearing instability in Hall MHD.

NASA Astrophysics Data System (ADS)

Chacon, L.; Knoll, D. A.; Finn, J. M.

2002-11-01

The study to date of the magnetic field effects on the Kelvin-Helmholtz instability (KHI) within the framework of Hall MHD has been limited to configurations with uniform magnetic fields and/or with the magnetic field perpendicular to the sheared ion flow (( B_0⊥ v0 )).(E. N. Opp et al., Phys. Fluids B), 3, 885 (1990)^,(M. Fujimoto et al., J. Geophys. Res.), 96, 15725 (1991)^,(J. D. Huba, Phys. Rev. Lett.), 72, 2033 (1994) Here, we are concerned with the effects of Hall physics in configurations in which (B_0allel v0 ) and both are sheared.(L. Chacon et al, Phys. Lett. A), submitted (2002) In resistive MHD, and for this configuration, either the tearing mode instability (TMI) or the KHI instability dominates depending upon their relative strength.( R. B. Dahlburg et al., Phys. Plasmas), 4, 1213 (1997) In Hall MHD, however, Hall physics decouples the ion and electron flows in a boundary layer of thickness (d_i=c/ω_pi) (ion skin depth), within which electrons are the only magnetized species. Hence, while KHI essentially remains an ion instability, TMI becomes an electron instability. As a result, both KHI and TMI can be unstable simultaneously and interact, creating a very rich linear and nonlinear behavior. This is confirmed by a linear study of the Hall MHD equations. Nonlinearly, both saturated regimes and highly dynamic regimes (with vortex and magnetic island merging) are observed.

Engagement in Digital Lecture Halls: A Study of Student Course Engagement and Mobile Device Use during Lecture

ERIC Educational Resources Information Center

Witecki, Gwendolyn; Nonnecke, Blair

2015-01-01

Universities have experienced increases in technology ownership and usage amongst students entering undergraduate programs. Almost all students report owning a mobile phone and many students view laptops and tablets as educational tools, though they also report using them for nonacademic activities during lectures. We explored the relationship…

Macroscopic Quantum Phase-Locking Model for the Quantum Hall = Effect

NASA Astrophysics Data System (ADS)

Wang, Te-Chun; Gou, Yih-Shun

1997-08-01

A macroscopic model of nonlinear dissipative phase-locking between a Josephson-like frequency and a macroscopic electron wave frequency is proposed to explain the Quantum Hall Effect. It is well known that a r.f-biased Josephson junction displays a collective phase-locking behavior which can be described by a non-autonomous second order equation or an equivalent 2+1-dimensional dynamical system. Making a direct analogy between the QHE and the Josephson system, this report proposes a computer-solving nonlinear dynamical model for the quantization of the Hall resistance. In this model, the Hall voltage is assumed to be proportional to a Josephson-like frequency and the Hall current is assumed related to a coherent electron wave frequency. The Hall resistance is shown to be quantized in units of the fine structure constant as the ratio of these two frequencies are locked into a rational winding number. To explain the sample-width dependence of the critical current, the 2DEG under large applied current is further assumed to develop a Josephson-like junction array in which all Josephson-like frequencies are synchronized. Other remarkable features of the QHE such as the resistance fluctuation and the even-denominator states are also discussed within this picture.

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

2002-02-01

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmid, H., E-mail: sih@zurich.ibm.com; Borg, M.; Moselund, K.

2015-06-08

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongsidemore » fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.« less

Electron Transport in Hall Thrusters

NASA Astrophysics Data System (ADS)

McDonald, Michael Sean

Despite high technological maturity and a long flight heritage, computer models of Hall thrusters remain dependent on empirical inputs and a large part of thruster development to date has been heavily experimental in nature. This empirical approach will become increasingly unsustainable as new high-power thrusters tax existing ground test facilities and more exotic thruster designs stretch and strain the boundaries of existing design experience. The fundamental obstacle preventing predictive modeling of Hall thruster plasma properties and channel erosion is the lack of a first-principles description of electron transport across the strong magnetic fields between the cathode and anode. In spite of an abundance of proposed transport mechanisms, accurate assessments of the magnitude of electron current due to any one mechanism are scarce, and comparative studies of their relative influence on a single thruster platform simply do not exist. Lacking a clear idea of what mechanism(s) are primarily responsible for transport, it is understandably difficult for the electric propulsion scientist to focus his or her theoretical and computational tools on the right targets. This work presents a primarily experimental investigation of collisional and turbulent Hall thruster electron transport mechanisms. High-speed imaging of the thruster discharge channel at tens of thousands of frames per second reveals omnipresent rotating regions of elevated light emission, identified with a rotating spoke instability. This turbulent instability has been shown through construction of an azimuthally segmented anode to drive significant cross-field electron current in the discharge channel, and suggestive evidence points to its spatial extent into the thruster near-field plume as well. Electron trajectory simulations in experimentally measured thruster electromagnetic fields indicate that binary collisional transport mechanisms are not significant in the thruster plume, and experiments altering the bias potential of thruster surfaces show minimal effects from electron collisions with thruster surfaces. Taken together these results motivate further investigation of the rotating spoke instability and development of an analytic description to permit its inclusion in next generation Hall thruster models.

The State of the Art in (Cd,Mn)Te Heterostructures: Fundamentals and Applications

NASA Astrophysics Data System (ADS)

Wojtowicz, Tomasz

In my talk I will review recent progress in the MBE technology of (Cd,Mn)Te nanostructures containing two dimensional electron gas (2DEG) that led to the first ever observation of fractional quantum Hall effect in magnetic system. This opens new directions in spintronics. I will first discuss already demonstrated applications of such high mobility magnetic-2DEG system for: a) THz and microwave radiation induced zero-bias generation of pure spin currents and very efficient magnetic field induced conversion of them into spin polarized electric current; b) clear demonstration of THz radiation from spin-waves excited via efficient Raman generation process; c) experimental demonstration of working principles of a new type of spin transistor based on controlling the spin transmission via tunable Landau-Zener transitions in spatially modulated spin-split bands. I will also explain the possibility to use magnetic-2DEG for developing of a new system where non-Abelian excitations can not only be created, but also manipulated in a two-dimensional plane. The system is based on high mobility CdTe quantum wells with engineered placement of Mn atoms, where sign of the Lande g-factor can be locally controlled by electrostatic gates at high magnetic fields. Such a system may allow for building a new platform for topologically protected quantum information processing. I will also present results demonstrating electrostatic control of 2D gas polarization in a quantum Hall regime. The research was partially supported by National Science Centre (Poland) Grant DEC-2012/06/A/ST3/00247 and by ONR Grant N000141410339.

Novel approach for calculating the charge carrier mobility and Hall factor for semiconductor materials

NASA Astrophysics Data System (ADS)

Colibaba, G. V.

2018-06-01

The additive Matthiessen's rule is the simplest and most widely used rule for the rapid experimental characterization and modeling of the charge carrier mobility. However, the error when using this rule can be higher than 40% and the contribution of the assumed additional scattering channels due to the difference between the experimental data and results calculated based on this rule can be misestimated by several times. In this study, a universal semi-additive equation is proposed for the total mobility and Hall factor, which is applicable to any quantity of scattering mechanisms, where it considers the energy dependence of the relaxation time and the error is 10-20 times lower compared with Matthiessen's rule. Calculations with accuracy of 99% are demonstrated for materials with polar-optical phonon, acoustic phonon via the piezoelectric potential, ionized, and neutral impurity scattering. The proposed method is extended to the deformation potential, dislocation, localized defect, alloy potential, and dipole scattering, for nondegenerate and partially degenerate materials.

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin

2015-01-14

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a roommore » temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.« less

Interacton-driven phenomena and Wigner transition in two-dimensional systems

NASA Astrophysics Data System (ADS)

Knighton, Talbot

The formation of a quantum Wigner Cyrstal (WC) is one of the most anticipated predictions of electron-electron interaction. This is expected to occur in zero magnetic field when the Coulomb energy EC dominates over the Fermi energy EF (at a ratio rs ≡ EC/ EF ˜ 37) for temperatures T << EF / kB. The extremely low T and ultra dilute carrier concentrations necessary to meet these requirements are difficult to achieve. Alternatively, a perpendicular magnetic B-field can be used to quench the kinetic energy. As B increases, various energies compete to produce the ground state. High purity systems with large interaction rs >1 tend to exhibit reentrant insulating phases (RIP) between the integer and fractional Hall states. These are suspected to be a form of WC, but the evidence is not yet conclusive. We use transport measurements to identify a conduction threshold in the RIP at filling factor nu = 0.37 (close to the 1/3 state) that is several orders of magnitude larger than the pinning observed in many other systems. We analyze the temperature and electric E-field dependence of this insulating phase and find them to be consistent with a second-order phase transition to WC. The measurements are performed on dilute holes p = 4 x 1010 cm-2 of mobility mu = 1/perho ˜ 2.5 x 106 cm 2/Vs in 20 nm GaAs/AlGaAs quantum square wells. We also discuss various other projects related to the study of topological states and strongly interacting charges: direct testing of the bulk conduction in a developing quantum Hall state using a corbino-disk-like geometry (or "anti-Hall bar"); preliminary results for ultra dilute charges in undoped heterojunction insulated gated field effect transistors; quantum capacitance measurement of the density of states across the vanadium dioxide metal insulator transition; progress towards a scanning capacitance measurement using the tip of an atomic force microscope; and graphene devices for optical detection.

Hall Determination of Atomic Radii of Alkali Metals

ERIC Educational Resources Information Center

Houari, Ahmed

2008-01-01

I will propose here an alternative method for determining atomic radii of alkali metals based on the Hall measurements of their free electron densities and the knowledge of their crystal structure. (Contains 2 figures.)

14. INTERIOR VIEW OF FIRST FLOOR ENTRY HALL, DOOR TO ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

14. INTERIOR VIEW OF FIRST FLOOR ENTRY HALL, DOOR TO LIVING ROOM AND DINING ROOM AT RIGHT, VIEW TO SOUTHEAST, ELECTRONIC FLASH ILLUMINATION. - Le Fevre House, 1444 Moore, Campbell, Santa Clara County, CA

Reentrant Metal-Insulator Transitions in Silicon -

NASA Astrophysics Data System (ADS)

Campbell, John William M.

This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by considering a variety of samples with a wide range of mobilities and by varying the ratio of the carrier density (controlled by the applied gate voltage) to the impurity density (fixed during sample growth). A phase diagram showing the boundaries between the two dimensional electron gas, the Wigner solid, and the single particle localization induced insulator is established in terms of carrier density and sample mobility.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

PubMed

Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Xuejing; Zhang, Qinghua; Zhang, Jing; Han, Furong; Gu, Lin; Liu, Banggui; Chen, Yuansha; Shen, Baogen; Sun, Jirong

2017-10-18

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO 3 -based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO 3 layer on a (001)-orientated KTaO 3 substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO 3 . Metallic 2DEGs with a Hall mobility as high as ∼2150 cm 2 /(V s) and a sheet carrier density as low as 2 × 10 12 cm -2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

Comment on 'Effects of magnetic field gradient on ion beam current in cylindrical Hall ion source' [J. Appl. Phys. 102, 123305 (2007)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitses, Y.; Smirnov, A.; Fisch, N. J.

It is argued that the key difference in the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al., J. Appl. Phys. 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of [Tang et al., J. Appl. Phys. 102, 123305 (2007)].

The Effects of Insulator Wall Material on Hall Thruster Discharges: A Numerical Study

DTIC Science & Technology

2001-01-03

An investigation was undertaken to determine how the choice of insulator wall material inside a Hall thruster discharge channel might affect thruster operation. In order to study this, an evolved hybrid particle-in-cell (PIC) numerical Hall thruster model, HPHall, was used. HPHall solves a set of quasi-one-dimensional fluid equations for electrons and tracks heavy particles using a PIC method.

Pair spectrometer hodoscope for Hall D at Jefferson Lab

DOE PAGES

Barbosa, Fernando J.; Hutton, Charles L.; Sitnikov, Alexandre; ...

2015-09-21

We present the design of the pair spectrometer hodoscope fabricated at Jefferson Lab and installed in the experimental Hall D. The hodoscope consists of thin scintillator tiles; the light from each tile is collected using wave-length shifting fibers and detected using a Hamamatsu silicon photomultiplier. Light collection was measured using relativistic electrons produced in the tagger area of the experimental Hall B.

Pair spectrometer hodoscope for Hall D at Jefferson Lab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbosa, Fernando J.; Hutton, Charles L.; Sitnikov, Alexandre

We present the design of the pair spectrometer hodoscope fabricated at Jefferson Lab and installed in the experimental Hall D. The hodoscope consists of thin scintillator tiles; the light from each tile is collected using wave-length shifting fibers and detected using a Hamamatsu silicon photomultiplier. Light collection was measured using relativistic electrons produced in the tagger area of the experimental Hall B.

L'effet Hall Quantique

NASA Astrophysics Data System (ADS)

Samson, Thomas

Nous proposons une methode permettant d'obtenir une expression pour la conductivite de Hall de structures electroniques bidimensionnelles et nous examinons celle -ci a la limite d'une temperature nulle dans le but de verifier l'effet Hall quantique. Nous allons nous interesser essentiellement a l'effet Hall quantique entier et aux effets fractionnaires inferieurs a un. Le systeme considere est forme d'un gaz d'electrons en interaction faible avec les impuretes de l'echantillon. Le modele du gaz d'electrons consiste en un gaz bidimensionnel d'electrons sans spin expose perpendiculairement a un champ magnetique uniforme. Ce dernier est decrit par le potentiel vecteur vec{rm A} defini dans la jauge de Dingle ou jauge symetrique. Conformement au formalisme de la seconde quantification, l'hamiltonien de ce gaz est represente dans la base des etats a un-corps de Dingle |n,m> et exprime ainsi en terme des operateurs de creation et d'annihilation correspondants a_sp{ rm n m}{dag} et a _{rm n m}. Nous supposons de plus que les electrons du niveau fondamental de Dingle interagissent entre eux via le potentiel coulombien. La methode utilisee fait appel a une equation mai tresse a N-corps, de nature quantique et statistique, et verifiant le second principe de la thermodynamique. A partir de celle-ci, nous obtenons un systeme d'equations differentielles appele hierarchie d'equations quantique dont la resolution nous permet de determiner une equation a un-corps, dite de Boltzmann quantique, et dictant l'evolution de la moyenne statistique de l'operateur non-diagonal a _sp{rm n m}{dag } a_{rm n}, _{rm m}, sous l'action du champ electrique applique vec{rm E}(t). C'est sa solution Tr(p(t) a _sp{rm n m}{dag} a_{rm n},_ {rm m}), qui definit la relation de convolution entre la densite courant de Hall vec{rm J}_{rm H }(t) et le champ electrique vec {rm E}(t) dont la transformee de Laplace-Fourier du noyau nous fournit l'expression de la conductivite de Hall desiree. Pour une valeur de facteur d'occupation (nombre d'electrons/degenerescence des etats de Dingle) superieure a un, c'est-a-dire en absence d'interaction electron-electron, il nous sera facile d'evaluer cette conductivite a la limite d'une temperature nulle et de demontrer qu'elle tend vers l'une des valeurs quantiques qe^2/h conformement a l'effet Hall quantique entier. Cependant, pour une valeur du facteur d'occupation inferieure a un, c'est-a-dire en presence d'interaction electron-electron, nous ne pourrons evaluer cette limite et obtenir les resultats escomptes a cause de l'impossibilite de determiner l'un des termes impliques. Neanmoins, ce dernier etant de nature statistique, il pourra etre aisement mis en fonction du propagateur du gaz d'electrons dont on doit maintenant determiner une expression en regime effet Hall quantique fractionnaire. Apres avoir demontre l'impuissance de la theorie des perturbations, basee sur le theoreme de Wick et la technique des diagrammes de Feynman, a accomplir cette tache correctement, nous proposons une seconde methode. Celle -ci fait appel au formalisme de l'integrale fonctionnelle et a l'utilisation d'une transformation de Hubbard-Stratonovich generalisee permettant de substituer a l'interaction a deux-corps une interaction effective a un-corps. L'expression finale obtenue bien que non completement resolue, devrait pouvoir etre estimee par une bonne approximation analytique ou au pire numeriquement.

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces.

PubMed

Yan, Hong; Zhang, Zhaoting; Wang, Shuanhu; Zhang, Hongrui; Chen, Changle; Jin, Kexin

2017-11-08

Modulating transport behaviors of two-dimensional electron gases are of critical importance for applications of the next-generation multifunctional oxide electronics. In this study, transport behaviors of LaAlO 3 /SrTiO 3 heterointerfaces modified through the Ni dopant and the light irradiation have been investigated. Through the Ni dopant, the resistances increase significantly and a resistance upturn phenomenon due to the Kondo effect is observed at T < 40 K. Under a 360 nm light irradiation, the interfaces exhibit a persistent photoconductivity and a suppressed Kondo effect at low temperature due to the increased mobility measured through the photo-Hall method. Moreover, the relative changes in resistance of interfaces induced by light are increased from 800 to 6600% at T = 12 K with increasing the substitution of Ni, which is discussed by the band bending and the lattice effect due to the Ni dopant. This work paves the way for better controlling the emerging properties of complex oxide heterointerfaces and would be helpful for photoelectric device applications based on all-oxides.

Influence of Strain on the Thermoelectric Properties of electron-doped SrTiO3 Thin Films

NASA Astrophysics Data System (ADS)

Sarantopoulos, Alexandros; Ferreiro-Vila, Elias; Magen, Cesar; Aguirre, Myriam H.; Pardo, Victor; Rivadulla, Francisco

2015-03-01

The discovery of a two dimensional electron gas with high mobility at the interface between insulating LaAlO3 / SrTiO3 (LAO/STO) opened the possibility of fabricating functional devices based on this interfacial effect. Therefore, it is important to study the influence of the growth parameters on the properties of the constituent materials. Here, we demonstrate that the thermoelectric properties of epitaxial thin films of Nb:STO can be finely tuned by adjusting the growth conditions in a PLD system. By growing the sample on different substrates, we demonstrate that the amount of vacancies depends on the degree of epitaxial compressive stress. The vacancies produced lead to impurity scattering at low temperatures. We show that the magnetoresistance response, and non-linear behavior of the Hall effect, characteristic of LAO/STO interfaces, can be reproduced in thin films of Nb:STO with a controlled number of vacancies. Moreover, we show that the Seebeck coefficient is a valid tool to obtain information about the degeneracy of the electronic band structure. We acknowledge support from the ERC 2D Therms project.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Tunable Magneto-electric Subbands in Oxide Electron Waveguides

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Annadi, Anil; Lu, Shicheng; Lee, Hyungwoo; Lee, Jungwoo; Eom, Chang-Beom; Huang, Mengchen; Irvin, Patrick; Levy, Jeremy

Strontium titanate-based complex-oxide interfaces hold great promise for exploring new correlated electron physics and applications in quantum technologies. Previous reports show electron mobility can be greatly enhanced in 1D, while the 2D interface can contain 1D channels due to the presence of ferroelastic domains. In addition, carrier density measurements at the 2D interface by Shubnikov-de Haas (SdH) oscillations and Hall effect reveal a large discrepancy. Here we fabricate quasi-1D electron waveguides at the LaAlO3/SrTiO3 (LAO/STO) interface to locally probe the interface. The conductance of the waveguides is fully quantized, and the corresponding magneto-electric subbands can be depopulated by increasing the magnetic field. The 2D carrier densities (1012 cm-2) extracted from magnetic depopulation are consistent with measurements by SdH oscillations at the 2D interface. Our results show that magneto-electric subbands of quasi-1D electron waveguides can reproduce known SdH signatures without discrepancies in electron density, and suggest that 2D SdH measurements may also arise from quasi-1D channels. We gratefully acknowledge financial support from AFOSR (FA9550-12-1- 0057 (JL) and FA9550-12-1-0342 (CBE)), ONR N00014-15-1-2847 (JL), and NSF DMR-1234096 (CBE).

Interacting Electrons and Holes in Quasi-2D Quantum Dots in Strong Magnetic Fields

NASA Astrophysics Data System (ADS)

Hawrylak, P.; Sheng, W.; Cheng, S.-J.

2004-09-01

Theory of optical properties of interacting electrons and holes in quasi-2D quantum dots in strong magnetic fields is discussed. In two dimensions and the lowest Landau level, hidden symmetries control the interaction of the interacting system with light. By confining electrons and holes into quantum dots hidden symmetries can be removed and the excitation spectrum of electrons and excitons can be observed. We discuss a theory electronic and of excitonic quantum Hall droplets at a filling factorν=2. For an excitonic quantum Hall droplet the characteristic emission spectra are predicted to be related to the total spin of electron and hole configurations. For the electronic droplet the excitation spectrum of the droplet can be mapped out by measuring the emission for increasing number of electrons.

Spin Hall effect and Landau spectrum of Dirac electrons in bismuth

NASA Astrophysics Data System (ADS)

Fuseya, Yuki

2015-03-01

Bismuth has played an important role in solid-state physics. Many key phenomena were first discovered in bismuth, such as diamagnetism, Seebeck, Nernst, Shubnikov-de Haas, and de Haas-van Alphen effects. These phenomena result from particular electronic states of bismuth. The strong spin-orbit interaction (~ 1.5eV) causes strong spin-dependent interband couplings resulting in an anomalous spin magnetic moment. We investigate the spin Hall effect and the angular dependent Landau spectrum of bismuth paying special attention to the effect of the anomalous spin magnetic moment. It is shown that the spin Hall insulator is possible and there is a fundamental relationship between the spin Hall conductivity and orbital diamagnetism in the insulating state of the Dirac electrons. Based on this theoretical finding, the magnitude of spin Hall conductivity is estimated for bismuth by that of orbital susceptibility. The magnitude of spin Hall conductivity turns out to be as large as 104Ω-1 cm-1, which is about 100 times larger than that of Pt. It is also shown that the ratio of the Zeeman splitting to the cyclotron energy, which reflects the effect of crystalline spin-orbit interaction, for holes at the T-point can be larger than 1.0 (the maximum of previous theories) and exhibit strong angular dependence, which gives a possible solution to the long-standing mystery of holes at the T-point. In collaboration with Masao Ogata, Hidetoshi Fukuyama, Zengwei Zhu, Benoît Fauqué, Woun Kang, and Kamran Behnia. Supported by JSPS (KAKENHI 24244053, 25870231, and 13428660).

Development of a Computationally Efficient, High Fidelity, Finite Element Based Hall Thruster Model

NASA Technical Reports Server (NTRS)

Jacobson, David (Technical Monitor); Roy, Subrata

2004-01-01

This report documents the development of a two dimensional finite element based numerical model for efficient characterization of the Hall thruster plasma dynamics in the framework of multi-fluid model. Effect of the ionization and the recombination has been included in the present model. Based on the experimental data, a third order polynomial in electron temperature is used to calculate the ionization rate. The neutral dynamics is included only through the neutral continuity equation in the presence of a uniform neutral flow. The electrons are modeled as magnetized and hot, whereas ions are assumed magnetized and cold. The dynamics of Hall thruster is also investigated in the presence of plasma-wall interaction. The plasma-wall interaction is a function of wall potential, which in turn is determined by the secondary electron emission and sputtering yield. The effect of secondary electron emission and sputter yield has been considered simultaneously, Simulation results are interpreted in the light of experimental observations and available numerical solutions in the literature.

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

Towards Reduced Wall Effect Hall Plasma Accelerators

DTIC Science & Technology

2007-07-01

Unpublished Conference Presentations E. Fernandez, N. Borelli , M. Cappelli, N. Gascon, "Investigation of Fluctuation-Induced Electron Transport in Hall...International Electric Propulsion Conference, Princeton University, October 31 November 4, 2005. 38. E. Fernandez, N. Borelli , M. Cappelli, N. Gascon

Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet.

PubMed

Korkusinski, M; Hawrylak, P; Liu, H W; Hirayama, Y

2017-03-06

The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means.

Manipulation of a Nuclear Spin by a Magnetic Domain Wall in a Quantum Hall Ferromagnet

PubMed Central

Korkusinski, M.; Hawrylak, P.; Liu, H. W.; Hirayama, Y.

2017-01-01

The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many electron system with degenerate ground states of opposite spin polarization in different Landau levels. We present here a microscopic theory of a domain wall between spin unpolarized and spin polarized quantum Hall ferromagnet states at filling factor two with the Zeeman energy comparable to the cyclotron energy. We determine the energies and many-body wave functions of the electronic quantum Hall droplet with up to N = 80 electrons as a function of the total spin, angular momentum, cyclotron and Zeeman energies from the spin singlet ν = 2 phase, through an intermediate polarization state exhibiting a domain wall to the fully spin-polarized phase involving the lowest and the second Landau levels. We demonstrate that the energy needed to flip one electron spin in a domain wall becomes comparable to the energy needed to flip the nuclear spin. The orthogonality of orbital electronic states is overcome by the many-electron character of the domain - the movement of the domain wall relative to the position of the nuclear spin enables the manipulation of the nuclear spin by electrical means. PMID:28262758

Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface

NASA Astrophysics Data System (ADS)

Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne

2018-05-01

Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ˜3.9 × 1014 cm-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

Thermally driven anomalous Hall effect transitions in FeRh

NASA Astrophysics Data System (ADS)

Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

2018-04-01

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Hall thruster microturbulence under conditions of modified electron wall emission

NASA Astrophysics Data System (ADS)

Tsikata, S.; Héron, A.; Honoré, C.

2017-05-01

In recent numerical, theoretical, and experimental papers, the short-scale electron cyclotron drift instability (ECDI) has been studied as a possible contributor to the anomalous electron current observed in Hall thrusters. In this work, features of the instability, in the presence of a zero-electron emission material at the thruster exit plane, are analyzed using coherent Thomson scattering. Limiting the electron emission at the exit plane alters the localization of the accelerating electric field and the expected drift velocity profile, which in turn modifies the amplitude and localization of the ECDI. The resulting changes to the standard thruster operation are expected to favor an increased contribution by the ECDI to electron current. Such an operation is associated with a degradation of thruster performance and stability.

Low-Cost, High-Performance Hall Thruster Support System

NASA Technical Reports Server (NTRS)

Hesterman, Bryce

2015-01-01

Colorado Power Electronics (CPE) has built an innovative modular PPU for Hall thrusters, including discharge, magnet, heater and keeper supplies, and an interface module. This high-performance PPU offers resonant circuit topologies, magnetics design, modularity, and a stable and sustained operation during severe Hall effect thruster current oscillations. Laboratory testing has demonstrated discharge module efficiency of 96 percent, which is considerably higher than current state of the art.

Development and Characterization of High-Efficiency, High-Specific Impulse Xenon Hall Thrusters

NASA Technical Reports Server (NTRS)

Hofer, Richard R.; Jacobson, David (Technical Monitor)

2004-01-01

This dissertation presents research aimed at extending the efficient operation of 1600 s specific impulse Hall thruster technology to the 2000 to 3000 s range. Motivated by previous industry efforts and mission studies, the aim of this research was to develop and characterize xenon Hall thrusters capable of both high-specific impulse and high-efficiency operation. During the development phase, the laboratory-model NASA 173M Hall thrusters were designed and their performance and plasma characteristics were evaluated. Experiments with the NASA-173M version 1 (v1) validated the plasma lens magnetic field design. Experiments with the NASA 173M version 2 (v2) showed there was a minimum current density and optimum magnetic field topography at which efficiency monotonically increased with voltage. Comparison of the thrusters showed that efficiency can be optimized for specific impulse by varying the plasma lens. During the characterization phase, additional plasma properties of the NASA 173Mv2 were measured and a performance model was derived. Results from the model and experimental data showed how efficient operation at high-specific impulse was enabled through regulation of the electron current with the magnetic field. The electron Hall parameter was approximately constant with voltage, which confirmed efficient operation can be realized only over a limited range of Hall parameters.

Tutorial: Physics and modeling of Hall thrusters

NASA Astrophysics Data System (ADS)

Boeuf, Jean-Pierre

2017-01-01

Hall thrusters are very efficient and competitive electric propulsion devices for satellites and are currently in use in a number of telecommunications and government spacecraft. Their power spans from 100 W to 20 kW, with thrust between a few mN and 1 N and specific impulse values between 1000 and 3000 s. The basic idea of Hall thrusters consists in generating a large local electric field in a plasma by using a transverse magnetic field to reduce the electron conductivity. This electric field can extract positive ions from the plasma and accelerate them to high velocity without extracting grids, providing the thrust. These principles are simple in appearance but the physics of Hall thrusters is very intricate and non-linear because of the complex electron transport across the magnetic field and its coupling with the electric field and the neutral atom density. This paper describes the basic physics of Hall thrusters and gives a (non-exhaustive) summary of the research efforts that have been devoted to the modelling and understanding of these devices in the last 20 years. Although the predictive capabilities of the models are still not sufficient for a full computer aided design of Hall thrusters, significant progress has been made in the qualitative and quantitative understanding of these devices.

Diagnostics Systems for Permanent Hall Thrusters Development

NASA Astrophysics Data System (ADS)

Ferreira, Jose Leonardo; Soares Ferreira, Ivan; Santos, Jean; Miranda, Rodrigo; Possa, M. Gabriela

This work describes the development of Permanent Magnet Hall Effect Plasma Thruster (PHALL) and its diagnostic systems at The Plasma Physics Laboratory of University of Brasilia. The project consists on the construction and characterization of plasma propulsion engines based on the Hall Effect. Electric thrusters have been employed in over 220 successful space missions. Two types stand out: the Hall-Effect Thruster (HET) and the Gridded Ion Engine (GIE). The first, which we deal with in this project, has the advantage of greater simplicity of operation, a smaller weight for the propulsion subsystem and a longer shelf life. It can operate in two configurations: magnetic layer and anode layer, the difference between the two lying in the positioning of the anode inside the plasma channel. A Hall-Effect Thruster-HET is a type of plasma thruster in which the propellant gas is ionized and accelerated by a magneto hydrodynamic effect combined with electrostatic ion acceleration. So the essential operating principle of the HET is that it uses a J x B force and an electrostatic potential to accelerate ions up to high speeds. In a HET, the attractive negative charge is provided by electrons at the open end of the Thruster instead of a grid, as in the case of the electrostatic ion thrusters. A strong radial magnetic field is used to hold the electrons in place, with the combination of the magnetic field and the electrostatic potential force generating a fast circulating electron current, the Hall current, around the axis of the Thruster, mainly composed by drifting electrons in an ion plasma background. Only a slow axial drift towards the anode occurs. The main attractive features of the Hall-Effect Thruster are its simple design and operating principles. Most of the Hall-Effect Thrusters use electromagnet coils to produce the main magnetic field responsible for plasma generation and acceleration. In this paper we present a different new concept, a Permanent Magnet Hall-Effect Thruster (PMHET), developed at the Plasma Physics Laboratory of UnB. The idea of using an array of permanent magnets, instead of an electromagnet, to produce a radial magnetic field inside the cylindrical plasma drift channel of the thruster is very attractive, especially because of the possibility of developing a HET with power consumption low enough to be used in small satellites or medium-size satellites with low on board power. Hall-Effect Thrusters are now a very good option for spacecraft primary propulsion and also for station-keeping of medium and large satellites. This is because of their high specific impulse, efficient use of propellant mass and combined low and precise thrust capabilities, which are related to an economy in terms of propellant mass utilization , longer satellite lifetime and easier spacecraft maneuvering in microgravity environment. The first HETs were developed in the mid 1950’s, and they were first called Closed Drift Thrusters. Today, the successful use of electric thrusters for attitude control and orbit modification on hundreds of satellites shows the advanced stage of development of this technology. In addition to this, after the success of space missions such as Deep Space One and Dawn (NASA), Hayabusa (JAXA) and Smart-1 (ESA), the employment of electric thrusters is also consolidated for the primary propulsion of spacecraft. This success is mainly due to three factors: reliability of this technology; efficiency of propellant utilization, and therefore reduction of the initial mass of the ship; possibility of operation over long time intervals, with practically unlimited cycling and restarts. This thrusting system is designed to be used in satellite attitude control and long term space missions. One of the greatest advantage of this kind of thruster is the production of a steady state magnetic field by permanent magnets providing electron trapping and Hall current generation within a significant decrease on the electric energy supply and thus turning this thruster into a specially good option when it comes to space usage for longer and deep space missions, where solar panels and electric energy storage on batteries is a limiting factor. Two prototype models of permanent magnets Hall Thrusters PHALL I and II were already developed and tested with different permanent magnets systems. From the first studies in Russia (former USSR) soon it became clear that the closed electron drift current (Hall current) inside the source channel was generated by the crossed electric and magnetic (radial) field configuration inside the cylindrical channel. The radial magnetic field action on the circular Hall current inside the channel, combined with the electric field action on the ions, is believed to be the main physical process responsible for plasma acceleration. However a good understanding of the acceleration mechanism and the steady-state plasma dynamics is still missing, and many issues concerning the role of electron transport, plasma fluctuations and instabilities are still open. In this work we describe an integrated diagnostic system used to elucidate these aspects such. Ion energy spectrum, plasma potential profiles, plasma instabilities spectrum, and electron distribution function are some of the plasma diagnosticis needed to undestand the main physics issues on Permanent Magnet Hall Thrusters.

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai

The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using atomic force microscope, high-resolution x-ray diffraction, transmission electron microscopy, and Hall resistance measurement. The formation of interfacial misfit (IMF) dislocation arrays depended on growth temperature. A uniformly distributed IMF array was found in a sample grown at 310 °C, which also exhibited the lowest threading dislocation density. The analysis suggested that an incomplete As-for-Sb anion exchange process impeded the formation of IMF on samplemore » grown above 310 °C. At growth temperature below 310 °C, island coalescence led to the formation of 60° dislocations and the disruption of periodic IMF array. All samples showed higher electron mobility at 300 K than at 77 K.« less

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.

2015-08-24

Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{supmore » +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.« less

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

An incompressible state of a photo-excited electron gas

PubMed Central

Chepelianskii, Alexei D.; Watanabe, Masamitsu; Nasyedkin, Kostyantyn; Kono, Kimitoshi; Konstantinov, Denis

2015-01-01

Two-dimensional electrons in a magnetic field can form new states of matter characterized by topological properties and strong electronic correlations as displayed in the integer and fractional quantum Hall states. In these states, the electron liquid displays several spectacular characteristics, which manifest themselves in transport experiments with the quantization of the Hall resistance and a vanishing longitudinal conductivity or in thermodynamic equilibrium when the electron fluid becomes incompressible. Several experiments have reported that dissipationless transport can be achieved even at weak, non-quantizing magnetic fields when the electrons absorb photons at specific energies related to their cyclotron frequency. Here we perform compressibility measurements on electrons on liquid helium demonstrating the formation of an incompressible electronic state under these resonant excitation conditions. This new state provides a striking example of irradiation-induced self-organization in a quantum system. PMID:26007282

Anomalous Hall Resistance in Bilayer Electron Systems

NASA Astrophysics Data System (ADS)

Ezawa, Z. F.; Suzuki, S.; Tsitsishvili, G.

2007-04-01

Interlayer phase coherence has revealed various novel features in bilayer quantum Hall (QH) systems. It is shown to make the QH resistance vanish instead of developing a Hall plateau in a bilayer counterflow geometry. It also induces another anomalous QH resistance discovered in a drag experiment. These theoretical results explain recent experimental data due to Kellogg et al. [PRL 93 (2004) 036801;PRL 88 (2002) 126804] and Tutuc et al.[PRL 93 (2004) 036802].

36. Historic American Buildings Survey E. W. Russell, Photographer, May ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

36. Historic American Buildings Survey E. W. Russell, Photographer, May 7, 1936 ROTUNDA, 3rd FLOOR, SHOWING N. HALL - Spring Hill College, Main Building, Old Shell Road, Spring Hill, Mobile County, AL

Efficiency Analysis of a High-Specific Impulse Hall Thruster

NASA Technical Reports Server (NTRS)

Jacobson, David (Technical Monitor); Hofer, Richard R.; Gallimore, Alec D.

2004-01-01

Performance and plasma measurements of the high-specific impulse NASA-173Mv2 Hall thruster were analyzed using a phenomenological performance model that accounts for a partially-ionized plasma containing multiply-charged ions. Between discharge voltages of 300 to 900 V, the results showed that although the net decrease of efficiency due to multiply-charged ions was only 1.5 to 3.0 percent, the effects of multiply-charged ions on the ion and electron currents could not be neglected. Between 300 to 900 V, the increase of the discharge current was attributed to the increasing fraction of multiply-charged ions, while the maximum deviation of the electron current from its average value was only +5/-14 percent. These findings revealed how efficient operation at high-specific impulse was enabled through the regulation of the electron current with the applied magnetic field. Between 300 to 900 V, the voltage utilization ranged from 89 to 97 percent, the mass utilization from 86 to 90 percent, and the current utilization from 77 to 81 percent. Therefore, the anode efficiency was largely determined by the current utilization. The electron Hall parameter was nearly constant with voltage, decreasing from an average of 210 at 300 V to an average of 160 between 400 to 900 V. These results confirmed our claim that efficient operation can be achieved only over a limited range of Hall parameters.

Advanced methods for preparation and characterization of infrared detector materials

NASA Technical Reports Server (NTRS)

Broerman, J. G.; Morris, B. J.; Meschter, P. J.

1983-01-01

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Selective Epitaxial Graphene Growth on SiC via AlN Capping

NASA Astrophysics Data System (ADS)

Zaman, Farhana; Rubio-Roy, Miguel; Moseley, Michael; Lowder, Jonathan; Doolittle, William; Berger, Claire; Dong, Rui; Meindl, James; de Heer, Walt; Georgia Institute of Technology Team

2011-03-01

Electronic-quality graphene is epitaxially grown by graphitization of carbon-face silicon carbide (SiC) by the sublimation of silicon atoms from selected regions uncapped by aluminum nitride (AlN). AlN (deposited by molecular beam epitaxy) withstands high graphitization temperatures of 1420o C, hence acting as an effective capping layer preventing the growth of graphene under it. The AlN is patterned and etched to open up windows onto the SiC surface for subsequent graphitization. Such selective epitaxial growth leads to the formation of high-quality graphene in desired patterns without the need for etching and lithographic patterning of graphene itself. No detrimental contact of the graphene with external chemicals occurs throughout the fabrication-process. The impact of process-conditions on the mobility of graphene is investigated. Graphene hall-bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. This controlled growth of graphene in selected regions represents a viable approach to fabrication of high-mobility graphene as the channel material for fast-switching field-effect transistors.

Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

NASA Technical Reports Server (NTRS)

Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

1995-01-01

The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

NASA Astrophysics Data System (ADS)

Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Hwang, Hyeon Jun; Ha, Min-Woo; Kim, Jiyoung

2015-03-01

In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm2/V.s and the lowest n-type carrier concentration of approximately 1.0 × 1018/cm3 were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

DTIC Science & Technology

1993-05-30

shown in Figures 9a and 9b. The carrier concentration was computed from the measured values of the Hall coefficient, RH , using the equation n (5) eRH...The electron concentrations in Figure 1 were calculated from the expression 1 (1) eRjj where RH is the Hall constant. Equation (1) assumes electron...expressions: 2 2RH fcP + ,’dP• (2) RH = (ncp + nd/pd) 2 e 1 p 1 (3) ncelc + ndel.d where nc and nd are the concentrations of conducting carriers in the

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors.

PubMed

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-10-19

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

PubMed Central

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-01-01

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites. PMID:28773973

Cyclotron resonance of interacting quantum Hall droplets

NASA Astrophysics Data System (ADS)

Widmann, M.; Merkt, U.; Cortés, M.; Häusler, W.; Eberl, K.

1998-06-01

The line shape and position of cyclotron resonance in gated GaAs/GaAlAs heterojunctions with δ-doped layers of negatively charged beryllium acceptors, that provide strong potential fluctuations in the channels of the quasi-two-dimensional electron systems, are examined. Specifically, the magnetic quantum limit is considered when the electrons are localized in separate quantum Hall droplets in the valleys of the disorder potential. A model treating disorder and electron-electron interaction on an equal footing accounts for all of the principal experimental findings: blue shifts from the unperturbed cyclotron frequency that decrease when the electron density is reduced, surprisingly narrow lines in the magnetic quantum limit, and asymmetric lines due to additional oscillator strength on their high-frequency sides.

The Inner Structure of Collisionless Magnetic Reconnection: The Electron-Frame Dissipation Measure and Hall Fields

NASA Technical Reports Server (NTRS)

Zenitani, Seiji; Hesse, Michael; Klimas, Alex; Black, Carrie; Kuznetsova, Masha

2011-01-01

It was recently proposed that the electron-frame dissipation measure, the energy transfer from the electromagnetic field to plasmas in the electron s rest frame, identifies the dissipation region of collisionless magnetic reconnection [Zenitani et al., Phys. Rev. Lett. 106, 195003 (2011)]. The measure is further applied to the electron-scale structures of antiparallel reconnection, by using two-dimensional particle-in-cell simulations. The size of the central dissipation region is controlled by the electron-ion mass ratio, suggesting that electron physics is essential. A narrow electron jet extends along the outflow direction until it reaches an electron shock. The jet region appears to be anti-dissipative. At the shock, electron heating is relevant to a magnetic cavity signature. The results are summarized to a unified picture of the single dissipation region in a Hall magnetic geometry.

The inner structure of collisionless magnetic reconnection: The electron-frame dissipation measure and Hall fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zenitani, Seiji; Hesse, Michael; Klimas, Alex

2011-12-15

It was recently proposed that the electron-frame dissipation measure, the energy transfer from the electromagnetic field to plasmas in the electron's rest frame, identifies the dissipation region of collisionless magnetic reconnection [Zenitani et al., Phys. Rev. Lett. 106, 195003 (2011)]. The measure is further applied to the electron-scale structures of antiparallel reconnection, by using two-dimensional particle-in-cell simulations. The size of the central dissipation region is controlled by the electron-ion mass ratio, suggesting that electron physics is essential. A narrow electron jet extends along the outflow direction until it reaches an electron shock. The jet region appears to be anti-dissipative. Atmore » the shock, electron heating is relevant to a magnetic cavity signature. The results are summarized to a unified picture of the single dissipation region in a Hall magnetic geometry.« less

Spin-Dependent Processes Measured without a Permanent Magnet.

PubMed

Fontanesi, Claudio; Capua, Eyal; Paltiel, Yossi; Waldeck, David H; Naaman, Ron

2018-05-07

A novel Hall circuit design that can be incorporated into a working electrode, which is used to probe spin-selective charge transfer and charge displacement processes, is reviewed herein. The general design of a Hall circuit based on a semiconductor heterostructure, which forms a shallow 2D electron gas and is used as an electrode, is described. Three different types of spin-selective processes have been studied with this device in the past: i) photoinduced charge exchange between quantum dots and the working electrode through chiral molecules is associated with spin polarization that creates a local magnetization and generates a Hall voltage; ii) charge polarization of chiral molecules by an applied voltage is accompanied by a spin polarization that generates a Hall voltage; and iii) cyclic voltammetry (current-voltage) measurements of electrochemical redox reactions that can be spin-analyzed by the Hall circuit to provide a third dimension (spin) in addition to the well-known current and voltage dimensions. The three studies reviewed open new doors into understanding both the spin current and the charge current in electronic materials and electrochemical processes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

Decoherence of high-energy electrons in weakly disordered quantum Hall edge states

NASA Astrophysics Data System (ADS)

Nigg, Simon E.; Lunde, Anders Mathias

2016-07-01

We investigate theoretically the phase coherence of electron transport in edge states of the integer quantum Hall effect at filling factor ν =2 , in the presence of disorder and inter edge state Coulomb interaction. Within a Fokker-Planck approach, we calculate analytically the visibility of the Aharonov-Bohm oscillations of the current through an electronic Mach-Zehnder interferometer. In agreement with recent experiments, we find that the visibility is independent of the energy of the current-carrying electrons injected high above the Fermi sea. Instead, it is the amount of disorder at the edge that sets the phase space available for inter edge state energy exchange and thereby controls the visibility suppression.

Magnetotransport in two dimensional electron systems under microwave excitation and in highly oriented pyrolytic graphite

NASA Astrophysics Data System (ADS)

Ramanayaka, Aruna N.

This thesis consists of two parts. The first part considers the effect of microwave radiation on magnetotransport in high quality GaAs/AlGaAs heterostructure two dimensional electron systems. The effect of microwave (MW) radiation on electron temperature was studied by investigating the amplitude of the Shubnikov de Haas (SdH) oscillations in a regime where the cyclotron frequency o c and the MW angular frequency o satisfy 2o ≤ o c ≤ 3.5o. The results indicate negligible electron heating under modest MW photoexcitation, in agreement with theoretical predictions. Next, the effect of the polarization direction of the linearly polarized MWs on the MW induced magnetoresistance oscillation amplitude was investigated. The results demonstrate the first indications of polarization dependence of MW induced magnetoresistance oscillations. In the second part, experiments on the magnetotransport of three dimensional highly oriented pyrolytic graphite (HOPG) reveal a non-zero Berry phase for HOPG. Furthermore, a novel phase relation between oscillatory magneto- and Hall- resistances was discovered from the studies of the HOPG specimen. INDEX WORDS: Two dimensional electron systems, Magnetoresistance, Microwave induced magnetoresistance oscillations, Graphite, Quantum Hall effect, Hall effect, Resistivity rule, Shubnikov de Haas effect, Shubnikov de Haas oscillation.

30. Historic American Buildings Survey E. W. Russell, Photographer, May ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

30. Historic American Buildings Survey E. W. Russell, Photographer, May 8, 1936 STAIR IN HALL TOWARDS REAR, W. EXTENSION, 1st FLOOR - Spring Hill College, Main Building, Old Shell Road, Spring Hill, Mobile County, AL

Development of scanning graphene Hall probes for magnetic microscopy

NASA Astrophysics Data System (ADS)

Schaefer, Brian T.; Wang, Lei; McEuen, Paul L.; Nowack, Katja C.

We discuss our progress on developing scanning Hall probes fabricated from hexagonal boron nitride (hBN)-encapsulated graphene, with the goal to image magnetic fields with submicron resolution. In contrast to scanning superconducting quantum interference device (SQUID) microscopy, this technique is compatible with a large applied magnetic field and not limited to cryogenic temperatures. The field sensitivity of a Hall probe depends inversely on carrier density, while the primary source of noise in the measurement is Johnson noise originating from the device resistance. hBN-encapsulated graphene demonstrates high carrier mobility at low carrier densities, therefore making it an ideal material for sensitive Hall probes. Furthermore, engineering the dielectric environment of graphene by encapsulating in hBN reduces low-frequency charge noise and disorder from the substrate. We outline our plans for adapting these devices for scanning, including characterization of the point spread function with a scanned current loop and fabrication of a deep-etched structure that enables positioning the sensitive area within 100 nanometers of the sample surface.

Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

NASA Astrophysics Data System (ADS)

Hiramatsu, Hidenori; Ueda, Kazushige; Ohta, Hiromichi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2003-02-01

Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ˜50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V-1s-1 in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm-3, while maintaining the Hall mobility as large as 4.0 cm2V-1s-1. Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm-1 was achieved.

Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions.

PubMed

Masuda, Hidetoshi; Sakai, Hideaki; Tokunaga, Masashi; Yamasaki, Yuichi; Miyake, Atsushi; Shiogai, Junichi; Nakamura, Shintaro; Awaji, Satoshi; Tsukazaki, Atsushi; Nakao, Hironori; Murakami, Youichi; Arima, Taka-hisa; Tokura, Yoshinori; Ishiwata, Shintaro

2016-01-01

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

Quantum transport in graphene Hall bars: Effects of side gates

NASA Astrophysics Data System (ADS)

Petrović, M. D.; Peeters, F. M.

2017-05-01

Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.

Electrical transport and optical band gap of NiFe2Ox thin films

NASA Astrophysics Data System (ADS)

Bougiatioti, Panagiota; Manos, Orestis; Klewe, Christoph; Meier, Daniel; Teichert, Niclas; Schmalhorst, Jan-Michael; Kuschel, Timo; Reiss, Günter

2017-12-01

We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.

Thermoelectric Properties of SnS with Na-Doping.

PubMed

Zhou, Binqiang; Li, Shuai; Li, Wen; Li, Juan; Zhang, Xinyue; Lin, Siqi; Chen, Zhiwei; Pei, Yanzhong

2017-10-04

Tin sulfide (SnS), a low-cost compound from the IV-VI semiconductors, has attracted particular attention due to its great potential for large-scale thermoelectric applications. However, pristine SnS shows a low carrier concentration, which leads to a low thermoelectric performance. In this work, sodium is utilized to substitute Sn to increase the hole concentration and consequently improve the thermoelectric power factor. The resultant Hall carrier concentration up to ∼10 19 cm -3 is the highest concentration reported so far for this compound. This further leads to the highest thermoelectric figure of merit, zT of 0.65, reported so far in polycrystalline SnS. The temperature-dependent Hall mobility shows a transition of carrier-scattering source from a grain boundary potential below 400 K to acoustic phonons at higher temperatures. The electronic transport properties can be well understood by a single parabolic band (SPB) model, enabling a quantitative guidance for maximizing the thermoelectric power factor. Using the experimental lattice thermal conductivity, a maximal zT of 0.8 at 850 K is expected when the carrier concentration is further increased to ∼1 × 10 20 cm -3 , according to the SPB model. This work not only demonstrates SnS as a promising low-cost thermoelectric material but also details the material parameters that fundamentally determine the thermoelectric properties.

Magnetic field deformation due to electron drift in a Hall thruster

NASA Astrophysics Data System (ADS)

Liang, Han; Yongjie, Ding; Xu, Zhang; Liqiu, Wei; Daren, Yu

2017-01-01

The strength and shape of the magnetic field are the core factors in the design of the Hall thruster. However, Hall current can affect the distribution of static magnetic field. In this paper, the Particle-In-Cell (PIC) method is used to obtain the distribution of Hall current in the discharge channel. The Hall current is separated into a direct and an alternating part to calculate the induced magnetic field using Finite Element Method Magnetics (FEMM). The results show that the direct Hall current decreases the magnetic field strength in the acceleration region and also changes the shape of the magnetic field. The maximum reduction in radial magnetic field strength in the exit plane is 10.8 G for an anode flow rate of 15 mg/s and the maximum angle change of the magnetic field line is close to 3° in the acceleration region. The alternating Hall current induces an oscillating magnetic field in the whole discharge channel. The actual magnetic deformation is shown to contain these two parts.

Structural and electronic engineering of 3DOM WO3 by alkali metal doping for improved NO2 sensing performance

NASA Astrophysics Data System (ADS)

Wang, Zhihua; Fan, Xiaoxiao; Han, Dongmei; Gu, Fubo

2016-05-01

Novel alkali metal doped 3DOM WO3 materials were prepared using a simple colloidal crystal template method. Raman, XRD, SEM, TEM, XPS, PL, Hall and UV-Vis techniques were used to characterize the structural and electronic properties of all the products, while the corresponding sensing performances targeting ppb level NO2 were determined at different working temperatures. For the overall goal of structural and electronic engineering, the co-effect of structural and electronic properties on the improved NO2 sensing performance of alkali metal doped 3DOM WO3 was studied. The test results showed that the gas sensing properties of 3DOM WO3/Li improved the most, with the fast response-recovery time and excellent selectivity. More importantly, the response of 3DOM WO3/Li to 500 ppb NO2 was up to 55 at room temperature (25 °C). The especially high response to ppb level NO2 at room temperature (25 °C) in this work has a very important practical significance. The best sensing performance of 3DOM WO3/Li could be ascribed to the most structure defects and the highest carrier mobility. And the possible gas sensing mechanism based on the model of the depletion layer was proposed to demonstrate that both structural and electronic properties are responsible for the NO2 sensing behavior.Novel alkali metal doped 3DOM WO3 materials were prepared using a simple colloidal crystal template method. Raman, XRD, SEM, TEM, XPS, PL, Hall and UV-Vis techniques were used to characterize the structural and electronic properties of all the products, while the corresponding sensing performances targeting ppb level NO2 were determined at different working temperatures. For the overall goal of structural and electronic engineering, the co-effect of structural and electronic properties on the improved NO2 sensing performance of alkali metal doped 3DOM WO3 was studied. The test results showed that the gas sensing properties of 3DOM WO3/Li improved the most, with the fast response-recovery time and excellent selectivity. More importantly, the response of 3DOM WO3/Li to 500 ppb NO2 was up to 55 at room temperature (25 °C). The especially high response to ppb level NO2 at room temperature (25 °C) in this work has a very important practical significance. The best sensing performance of 3DOM WO3/Li could be ascribed to the most structure defects and the highest carrier mobility. And the possible gas sensing mechanism based on the model of the depletion layer was proposed to demonstrate that both structural and electronic properties are responsible for the NO2 sensing behavior. Electronic supplementary information (ESI) available: Raman, SEM, TEM, mapping, XPS and PL images; transient plot; response of 3DOM WO3/Li to NO2 concentration, sensing stability and the corresponding log (Sg - 1) versus log Cg curves. See DOI: 10.1039/c6nr00858e

Hall-Effect Thruster Simulations with 2-D Electron Transport and Hydrodynamic Ions

NASA Technical Reports Server (NTRS)

Mikellides, Ioannis G.; Katz, Ira; Hofer, Richard H.; Goebel, Dan M.

2009-01-01

A computational approach that has been used extensively in the last two decades for Hall thruster simulations is to solve a diffusion equation and energy conservation law for the electrons in a direction that is perpendicular to the magnetic field, and use discrete-particle methods for the heavy species. This "hybrid" approach has allowed for the capture of bulk plasma phenomena inside these thrusters within reasonable computational times. Regions of the thruster with complex magnetic field arrangements (such as those near eroded walls and magnets) and/or reduced Hall parameter (such as those near the anode and the cathode plume) challenge the validity of the quasi-one-dimensional assumption for the electrons. This paper reports on the development of a computer code that solves numerically the 2-D axisymmetric vector form of Ohm's law, with no assumptions regarding the rate of electron transport in the parallel and perpendicular directions. The numerical challenges related to the large disparity of the transport coefficients in the two directions are met by solving the equations in a computational mesh that is aligned with the magnetic field. The fully-2D approach allows for a large physical domain that extends more than five times the thruster channel length in the axial direction, and encompasses the cathode boundary. Ions are treated as an isothermal, cold (relative to the electrons) fluid, accounting for charge-exchange and multiple-ionization collisions in the momentum equations. A first series of simulations of two Hall thrusters, namely the BPT-4000 and a 6-kW laboratory thruster, quantifies the significance of ion diffusion in the anode region and the importance of the extended physical domain on studies related to the impact of the transport coefficients on the electron flow field.

Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

NASA Astrophysics Data System (ADS)

Ferreira, Aires; Milletari, Mirco

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

Optimum Design Rules for CMOS Hall Sensors

PubMed Central

Crescentini, Marco; Biondi, Michele; Romani, Aldo; Tartagni, Marco; Sangiorgi, Enrico

2017-01-01

This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. PMID:28375191

Optimum Design Rules for CMOS Hall Sensors.

PubMed

Crescentini, Marco; Biondi, Michele; Romani, Aldo; Tartagni, Marco; Sangiorgi, Enrico

2017-04-04

This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes.

Quantum Hall signatures of dipolar Mahan excitons

NASA Astrophysics Data System (ADS)

Schinner, G. J.; Repp, J.; Kowalik-Seidl, K.; Schubert, E.; Stallhofer, M. P.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Govorov, A. O.; Holleitner, A. W.; Kotthaus, J. P.

2013-01-01

We explore the photoluminescence of spatially indirect, dipolar Mahan excitons in a gated double quantum well diode containing a mesoscopic electrostatic trap for neutral dipolar excitons at low temperatures down to 250 mK and in quantizing magnetic fields. Mahan excitons in the surrounding of the trap, consisting of individual holes interacting with a degenerate two-dimensional electron system confined in one of the quantum wells, exhibit strong quantum Hall signatures at integer filling factors and related anomalies around filling factor ν=(2)/(3),(3)/(5), and (1)/(2), reflecting the formation of composite fermions. Interactions across the trap perimeter are found to influence the energy of the confined neutral dipolar excitons by the presence of the quantum Hall effects in the two-dimensional electron system surrounding the trap.

Interaction driven quantum Hall effect in artificially stacked graphene bilayers

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-01-01

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-04-21

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers.

Visual evidence of suppressing the ion and electron energy loss on the wall in Hall thrusters

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Peng, Wuji; Sun, Hezhi; Wei, Liqiu; Zeng, Ming; Wang, Fufeng; Yu, Daren

2017-03-01

A method of pushing down magnetic field with two permanent magnetic rings is proposed in this paper. It can realize ionization in a channel and acceleration outside the channel. The wall will only suffer from the bombardment of low-energy ions and electrons, which can effectively reduce channel erosion and extend the operational lifetime of thrusters. Furthermore, there is no additional power consumption of coils, which improves the efficiency of systems. We show here the newly developed 200 W no wall-loss Hall thruster (NWLHT-200) that applies the method of pushing down magnetic field with two permanent magnetic rings; the visual evidence we obtained preliminarily confirms the feasibility that the proposed method can realize discharge without wall energy loss or erosion of Hall thrusters.

Jefferson Lab Experimental Hall C

NASA Astrophysics Data System (ADS)

Carlini, Roger D.

1996-10-01

Jefferson Lab's Hall C went into initial operation in November 1995. The hall has a short orbit spectrometer (SOS) for short-lived particles such as pions and kaons and a high-momentum spectrometer (HMS) usually used for electrons. The SOS can also be used for protons. The HMS can range to 7 GeV/c. Both the SOS and HMS have typical resolutions of (10-3). Experiments for this hall range from measuring the neutron electric form factor, to color transparency, to creating strange nuclei. This paper will present the optical capabilities of the spectrometers, the parameters of the detection systems, and the overall beam line characteristics of the hall as determined from the results from the recent physics experiments along with the upcoming experimental schedule. Additional information is available at URL http://www.cebaf.gov/hallc.html.

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sengupta, Parijat; Bellotti, Enrico

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; themore » spin Hall conductivity of WSe{sub 2} was found to be larger.« less

28. Historic American Buildings Survey E. W. Russell, Photographer, May ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

28. Historic American Buildings Survey E. W. Russell, Photographer, May 7, 1936 INTERIOR VIEW OF MAIN ENTRANCE TO MAIN HALL, 1st FLOOR - Spring Hill College, Main Building, Old Shell Road, Spring Hill, Mobile County, AL

33. Historic American Buildings Survey E. W. Russell, Photographer, May ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

33. Historic American Buildings Survey E. W. Russell, Photographer, May 7, 1936 VIEW OF STAIR FROM 2nd STORY HALL, W. END OF BUILDING - Spring Hill College, Main Building, Old Shell Road, Spring Hill, Mobile County, AL

34. Historic American Buildings Survey E. W. Russell, Photographer, May ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

34. Historic American Buildings Survey E. W. Russell, Photographer, May 8, 1936 VIEW OF STAIR FROM REAR (SOUTH) OF HALL, 2nd FLOOR - Spring Hill College, Main Building, Old Shell Road, Spring Hill, Mobile County, AL

Fractional Quantization of the Hall Effect

DOE R&D Accomplishments Database

Laughlin, R. B.

1984-02-27

The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.

Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering

NASA Astrophysics Data System (ADS)

Pődör, B.

2006-11-01

Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a ˜ T-1/2 like temperature dependence dominated the hole mobility in the investigated temperature range.