Non-equilibrium thermionic electron emission for metals at high temperatures

NASA Astrophysics Data System (ADS)

Domenech-Garret, J. L.; Tierno, S. P.; Conde, L.

2015-08-01

Stationary thermionic electron emission currents from heated metals are compared against an analytical expression derived using a non-equilibrium quantum kappa energy distribution for the electrons. The latter depends on the temperature decreasing parameter κ ( T ) , which decreases with increasing temperature and can be estimated from raw experimental data and characterizes the departure of the electron energy spectrum from equilibrium Fermi-Dirac statistics. The calculations accurately predict the measured thermionic emission currents for both high and moderate temperature ranges. The Richardson-Dushman law governs electron emission for large values of kappa or equivalently, moderate metal temperatures. The high energy tail in the electron energy distribution function that develops at higher temperatures or lower kappa values increases the emission currents well over the predictions of the classical expression. This also permits the quantitative estimation of the departure of the metal electrons from the equilibrium Fermi-Dirac statistics.

Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

NASA Astrophysics Data System (ADS)

Benlakehal, D.; Belfedal, A.; Bouizem, Y.; Sib, J. D.; Chahed, L.; Zellama, K.

2016-12-01

The dependence on the temperature range, T, of the electronic transport mechanism in intrinsic and doped hydrogenated nanocrystalline silicon films, deposited by radiofrequency-magnetron sputtering at low substrate temperature, has been studied. Electrical conductivity measurements σ(T) have been conducted on these films, as a function of temperature, in the 93-450 K range. The analysis of these results clearly shows a thermally activated conduction process in the 273-450 K range which allows us to estimate the associated activation energy as well as the preexponential conductivity factor. While, in the lower temperature range (T < 273 K), a non-ohmic behavior is observed for the conductivity changes. The conductivity σ(T) presents a linear dependence on (T-1/4) , and a hopping mechanism is suggested to explain these results. By using the Percolation theory, further information can be gained about the density of states near the Fermi level as well as the range and the hopping energy.

Electron attachment to C{sub 2} fluorocarbon radicals at high temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuman, Nicholas S.; Miller, Thomas M.; Viggiano, Albert A., E-mail: afrl.rvborgmailbox@kirtland.af.mil

Thermal electron attachment to the radical species C{sub 2}F{sub 3} and C{sub 2}F{sub 5} has been studied over the temperature range 300–890 K using the Variable Electron and Neutral Density Attachment Mass Spectrometry technique. Both radicals exclusively undergo dissociative attachment to yield F{sup −}. The rate constant for C{sub 2}F{sub 5} shows little dependence over the temperature range, remaining ∼4 × 10{sup −9} cm{sup 3} s{sup −1}. The rate constant for C{sub 2}F{sub 3} attachment rises steeply with temperature from 3 × 10{sup −11} cm{sup 3} s{sup −1} at 300 K to 1 × 10{sup −9} cm{sup 3} s{sup −1} at 890 K.more » The behaviors of both species at high temperature are in agreement with extrapolations previously made from data below 600 K using a recently developed kinetic modeling approach. Measurements were also made on C{sub 2}F{sub 3}Br and C{sub 2}F{sub 5}Br (used in this work as precursors to the radicals) over the same temperature range, and, for C{sub 2}F{sub 5}Br as a function of electron temperature. The attachment rate constants to both species rise with temperature following Arrhenius behavior. The attachment rate constant to C{sub 2}F{sub 5}Br falls with increasing electron temperature, in agreement with the kinetic modeling. The current data fall in line with past predictions of the kinetic modeling approach, again showing the utility of this simplified approach.« less

Electronic transport in smectic liquid crystals

NASA Astrophysics Data System (ADS)

Shiyanovskaya, I.; Singer, K. D.; Twieg, R. J.; Sukhomlinova, L.; Gettwert, V.

2002-04-01

Time-of-flight measurements of transient photoconductivity have revealed bipolar electronic transport in phenylnaphthalene and biphenyl liquid crystals (LC), which exhibit several smectic mesophases. In the phenylnaphthalene LC, the hole mobility is significantly higher than the electron mobility and exhibits different temperature and phase behavior. Electron mobility in the range ~10-5 cm2/V s is temperature activated and remains continuous at the phase transitions. However, hole mobility is nearly temperature independent within the smectic phases, but is very sensitive to smectic order, 10-3 cm2/V s in the smectic-B (Sm-B) and 10-4 cm2/V s in the smectic-A (Sm-A) mesophases. The different behavior for holes and electron transport is due to differing transport mechanisms. The electron mobility is apparently controlled by rate-limiting multiple shallow trapping by impurities, but hole mobility is not. To explain the lack of temperature dependence for hole mobility within the smectic phases we consider two possible polaron transport mechanisms. The first mechanism is based on the hopping of Holstein small polarons in the nonadiabatic limit. The polaron binding energy and transfer integral values, obtained from the model fit, turned out to be sensitive to the molecular order in smectic mesophases. A second possible scenario for temperature-independent hole mobility involves the competion between two different polaron mechanisms involving so-called nearly small molecular polarons and small lattice polarons. Although the extracted transfer integrals and binding energies are reasonable and consistent with the model assumptions, the limited temperature range of the various phases makes it difficult to distinguish between any of the models. In the biphenyl LCs both electron and hole mobilities exhibit temperature activated behavior in the range of 10-5 cm2/V s without sensitivity to the molecular order. The dominating transport mechanism is considered as multiple trapping in the impurity sites. Temperature-activated mobility was treated within the disorder formalism, and activation energy and width of density of states have been calculated.

Temperature and energy effects on secondary electron emission from SiC ceramics induced by Xe17+ ions.

PubMed

Zeng, Lixia; Zhou, Xianming; Cheng, Rui; Wang, Xing; Ren, Jieru; Lei, Yu; Ma, Lidong; Zhao, Yongtao; Zhang, Xiaoan; Xu, Zhongfeng

2017-07-25

Secondary electron emission yield from the surface of SiC ceramics induced by Xe 17+ ions has been measured as a function of target temperature and incident energy. In the temperature range of 463-659 K, the total yield gradually decreases with increasing target temperature. The decrease is about 57% for 3.2 MeV Xe 17+ impact, and about 62% for 4.0 MeV Xe 17+ impact, which is much larger than the decrease observed previously for ion impact at low charged states. The yield dependence on the temperature is discussed in terms of work function, because both kinetic electron emission and potential electron emission are influenced by work function. In addition, our experimental data show that the total electron yield gradually increases with the kinetic energy of projectile, when the target is at a constant temperature higher than room temperature. This result can be explained by electronic stopping power which plays an important role in kinetic electron emission.

Temperature dependence of the hydrated electron's excited-state relaxation. II. Elucidating the relaxation mechanism through ultrafast transient absorption and stimulated emission spectroscopy

NASA Astrophysics Data System (ADS)

Farr, Erik P.; Zho, Chen-Chen; Challa, Jagannadha R.; Schwartz, Benjamin J.

2017-08-01

The structure of the hydrated electron, particularly whether it exists primarily within a cavity or encompasses interior water molecules, has been the subject of much recent debate. In Paper I [C.-C. Zho et al., J. Chem. Phys. 147, 074503 (2017)], we found that mixed quantum/classical simulations with cavity and non-cavity pseudopotentials gave different predictions for the temperature dependence of the rate of the photoexcited hydrated electron's relaxation back to the ground state. In this paper, we measure the ultrafast transient absorption spectroscopy of the photoexcited hydrated electron as a function of temperature to confront the predictions of our simulations. The ultrafast spectroscopy clearly shows faster relaxation dynamics at higher temperatures. In particular, the transient absorption data show a clear excess bleach beyond that of the equilibrium hydrated electron's ground-state absorption that can only be explained by stimulated emission. This stimulated emission component, which is consistent with the experimentally known fluorescence spectrum of the hydrated electron, decreases in both amplitude and lifetime as the temperature is increased. We use a kinetic model to globally fit the temperature-dependent transient absorption data at multiple temperatures ranging from 0 to 45 °C. We find the room-temperature lifetime of the excited-state hydrated electron to be 137 ±40 fs, in close agreement with recent time-resolved photoelectron spectroscopy (TRPES) experiments and in strong support of the "non-adiabatic" picture of the hydrated electron's excited-state relaxation. Moreover, we find that the excited-state lifetime is strongly temperature dependent, changing by slightly more than a factor of two over the 45 °C temperature range explored. This temperature dependence of the lifetime, along with a faster rate of ground-state cooling with increasing bulk temperature, should be directly observable by future TRPES experiments. Our data also suggest that the red side of the hydrated electron's fluorescence spectrum should significantly decrease with increasing temperature. Overall, our results are not consistent with the nearly complete lack of temperature dependence predicted by traditional cavity models of the hydrated electron but instead agree qualitatively and nearly quantitatively with the temperature-dependent structural changes predicted by the non-cavity hydrated electron model.

Transport and reconnection in tokamak sawteeth.

PubMed

Gentle, K W; Austin, M E; Phillips, P E

2003-12-19

The core of a tokamak discharge often undergoes periodic relaxation oscillations, sawteeth, as the steepening current and temperature profiles are flattened by fast reconnection events. Careful analysis of the electron temperature evolution over this cycle gives an estimate of the energy dissipated in the electrons during reconnection and a measure of the transport characteristic (energy flux versus temperature gradient) over the range of parameters occurring over the remainder of the cycle. The energy dissipated is consistent with estimates of the loss of poloidal magnetic energy. The transport characteristics exhibit a wide range of behaviors.

Thermoelectric power of PrMg3

NASA Astrophysics Data System (ADS)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

Polaron mobility obtained by a variational approach for lattice Fröhlich models

NASA Astrophysics Data System (ADS)

Kornjača, Milan; Vukmirović, Nenad

2018-04-01

Charge carrier mobility for a class of lattice models with long-range electron-phonon interaction was investigated. The approach for mobility calculation is based on a suitably chosen unitary transformation of the model Hamiltonian which transforms it into the form where the remaining interaction part can be treated as a perturbation. Relevant spectral functions were then obtained using Matsubara Green's functions technique and charge carrier mobility was evaluated using Kubo's linear response formula. Numerical results were presented for a wide range of electron-phonon interaction strengths and temperatures in the case of one-dimensional version of the model. The results indicate that the mobility decreases with increasing temperature for all electron-phonon interaction strengths in the investigated range, while longer interaction range leads to more mobile carriers.

Finite-T correlations and free exchange-correlation energy of quasi-one-dimensional electron gas

NASA Astrophysics Data System (ADS)

Garg, Vinayak; Sharma, Akariti; Moudgil, R. K.

2018-02-01

We have studied the effect of temperature on static density-density correlations and plasmon excitation spectrum of quasi-one-dimensional electron gas (Q1DEG) using the random phase approximation (RPA). Numerical results for static structure factor, pair-correlation function, static density susceptibility, free exchange-correlation energy and plasmon dispersion are presented over a wide range of temperature and electron density. As an interesting result, we find that the short-range correlations exhibit a non-monotonic dependence on temperature T, initially growing stronger (i.e. the pair-correlation function at small inter-electron spacing assuming relatively smaller values) with increasing T and then weakening above a critical T. The cross-over temperature is found to increase with increasing coupling among electrons. Also, the q = 2kF peak in the static density susceptibility χ(q,ω = 0,T) at T = 0 K smears out with rising T. The free exchange-correlation energy and plasmon dispersion show a significant variation with T, and the trend is qualitatively the same as in higher dimensions.

Interplay of long-range and short-range Coulomb interactions in an Anderson-Mott insulator

NASA Astrophysics Data System (ADS)

Baćani, Mirko; Novak, Mario; Orbanić, Filip; Prša, Krunoslav; Kokanović, Ivan; Babić, Dinko

2017-07-01

In this paper, we tackle the complexity of coexisting disorder and Coulomb electron-electron interactions (CEEIs) in solids by addressing a strongly disordered system with intricate CEEIs and a screening that changes both with charge carrier doping level Q and temperature T . We report on an experimental comparative study of the T dependencies of the electrical conductivity σ and magnetic susceptibility χ of polyaniline pellets doped with dodecylbenzenesulfonic acid over a wide range. This material is special within the class of doped polyaniline by exhibiting in the electronic transport a crossover between a low-T variable range hopping (VRH) and a high-T nearest-neighbor hopping (NNH) well below room temperature. Moreover, there is evidence of a soft Coulomb gap ΔC in the disorder band, which implies the existence of a long-range CEEI. Simultaneously, there is an onsite CEEI manifested as a Hubbard gap U and originating in the electronic structure of doped polyaniline, which consists of localized electron states with dynamically varying occupancy. Therefore, our samples represent an Anderson-Mott insulator in which long-range and short-range CEEIs coexist. The main result of the study is the presence of a crossover between low- and high-T regimes not only in σ (T ) but also in χ (T ) , the crossover temperature T* being essentially the same for both observables over the entire doping range. The relatively large electron localization length along the polymer chains results in U being small, between 12 and 20 meV for the high and low Q , respectively. Therefore, the thermal energy at T* is sufficiently large to lead to an effective closing of the Hubbard gap and the consequent appearance of NNH in the electronic transport within the disorder band. ΔC is considerably larger than U , decreasing from 190 to 30 meV as Q increases, and plays the role of an activation energy in the NNH.

Performance of a flight qualified, thermoelectrically temperature controlled QCM sensor with power supply, thermal controller and signal processor

NASA Technical Reports Server (NTRS)

Wallace, D. A.

1980-01-01

A thermoelectrically temperature controlled quartz crystal microbalance (QCM) system was developed for the measurement of ion thrustor generated mercury contamination on spacecraft. Meaningful flux rate measurements dictated an accurately held sensing crystal temperature despite spacecraft surface temperature variations from -35 C to +60 C over the flight temperature range. An electronic control unit was developed with magentic amplifier transformer secondary power supply, thermal control electronics, crystal temperature analog conditioning and a multiplexed 16 bit frequency encoder.

Operation of a New COTS Crystal Oscillator - CXOMHT over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2011-01-01

Crystal oscillators are extensively used in electronic circuits to provide timing or clocking signals in data acquisition, communications links, and control systems, to name a few. They are affordable, small in size, and reliable. Because of the inherent characteristics of the crystal, the oscillator usually exhibits extreme accuracy in its output frequency within the intrinsic crystal stability. Stability of the frequency could be affected under varying load levels or other operational conditions. Temperature is one of those important factors that influence the frequency stability of an oscillator; as it does to the functionality of other electronic components. Electronics designed for use in NASA deep space and planetary exploration missions are expected to be exposed to extreme temperatures and thermal cycling over a wide range. Thus, it is important to design and develop circuits that are able to operate efficiently and reliably under in these harsh temperature environments. Most of the commercial-off-the-shelf (COTS) devices are very limited in terms of their specified operational temperature while very few custom-made commercial and military-grade parts have the ability to operate in a slightly wider range of temperature than those of the COTS parts. These parts are usually designed for operation under one temperature extreme, i.e. hot or cold, and do not address the wide swing in the operational temperature, which is typical of the space environment. For safe and successful space missions, electronic systems must therefore be designed not only to withstand the extreme temperature exposure but also to operate efficiently and reliably. This report presents the results obtained on the evaluation of a new COTS crystal oscillator under extreme temperatures.

Reprint of: Effects of cold deformation, electron irradiation and extrusion on deuterium desorption behavior in Zr-1%Nb alloy

NASA Astrophysics Data System (ADS)

Morozov, O.; Mats, O.; Mats, V.; Zhurba, V.; Khaimovich, P.

2018-01-01

The present article introduces the data of analysis of ranges of ion-implanted deuterium desorption from Zr-1% Nb alloy. The samples studied underwent plastic deformation, low temperature extrusion and electron irradiation. Plastic rolling of the samples at temperature ∼300 K resulted in plastic deformation with the degree of ε = 3.9 and the formation of nanostructural state with the average grain size of d = 61 nm. The high degree of defectiveness is shown in thermodesorption spectrum as an additional area of the deuterium desorption in the temperature ranges 650-850 K. The further processing of the sample (that had undergone plastic deformation by plastic rolling) with electron irradiation resulted in the reduction of the average grain size (58 nm) and an increase in borders concentration. As a result the amount of deuterium desorpted increased in the temperature ranges 650-900 K. In case of Zr-1% Nb samples deformed by extrusion the extension of desorption area is observed towards the temperature reduction down to 420 K. The formation of the phase state of deuterium solid solution in zirconium was not observed. The structural state behavior is a control factor in the process of deuterium thermodesorption spectrum structure formation with a fixed implanted deuterium dose (hydrogen diagnostics). It appears as additional temperature ranges of deuterium desorption depending on the type, character and defect content.

Possible observation of Griffith phase over large temperature range in plasma sintered La0.67Ca0.33MnO3

NASA Astrophysics Data System (ADS)

Mishra, D. K.; Roul, B. K.; Singh, S. K.; Srinivasu, V. V.

2018-02-01

We report on the possible observation of Griffith phase in a wide range of temperature (>272-378 K) in the 2.5 min plasma sintered La0.67Ca0.33MnO3 (LCMO) as deduced from careful electron spin resonance studies. This is 106 K higher than the paramagnetic to ferromagnetic transition (Curie transition ∼272 K) temperature. The indication of Griffith phase in such a wide range is not reported earlier by any group. We purposefully prepared LCMO samples by plasma sintering technique so as to create a disordered structure by rapid quenching which we believe, is the prime reason for the observation of Griffith Phase above the Curie transition temperature. The inverse susceptibility curve represents the existence of ferromagnetic cluster in paramagnetic region. The large resonance peak width (40-60 mT) within the temperature range 330-378 K confirms the sample magnetically inhomogeneity which is also established from our electron probe microstructure analysis (EPMA). EPMA establishes the presence of higher percentage of Mn3+ cluster in comparison to Mn4+. This is the reason for which Griffith state is enhanced largely to a higher range of temperature.

Satellite Charge Control with Lithium Ion Source and Electron Emission

DTIC Science & Technology

1990-12-01

for the spacecraft charge control. C. THERMIONIC ELECTRON EMISSION Electrons may be emitted by surfaces at high temperature in a process, called...data in the high voltage region and 1300 to 1600 °K temperature range may be fitted to the following equation, for a 50 % lithium sample: log01 =logos...in Figure 15, is similar to a high - temperature quartz structure, yet differs from it in that half of the silicon atoms are repiaced by aluminum atoms

Superconducting active impedance converter

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Martens, Jon S.

1993-01-01

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

International reference ionosphere 1990

NASA Technical Reports Server (NTRS)

Bilitza, Dieter; Rawer, K.; Bossy, L.; Kutiev, I.; Oyama, K.-I.; Leitinger, R.; Kazimirovsky, E.

1990-01-01

The International Reference Ionosphere 1990 (IRI-90) is described. IRI described monthly averages of the electron density, electron temperature, ion temperature, and ion composition in the altitude range from 50 to 1000 km for magnetically quiet conditions in the non-auroral ionosphere. The most important improvements and new developments are summarized.

Electron impact cross-sections and cooling rates for methane. [in thermal balance of electrons in atmospheres and ionospheres of planets and satellites in outer solar system

NASA Technical Reports Server (NTRS)

Gan, L.; Cravens, T. E.

1992-01-01

Energy transfer between electrons and methane gas by collisional processes plays an important role in the thermal balance of electrons in the atmospheres and ionospheres of planets and satellites in the outer solar system. The literature is reviewed for electron impact cross-sections for methane in this paper. Energy transfer rates are calculated for elastic and inelastic processes using a Maxwellian electron distribution. Vibrational, rotational, and electronic excitation and ionization are included. Results are presented for a wide range of electron temperatures and neutral temperatures.

SmB6 electron-phonon coupling constant from time- and angle-resolved photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Sterzi, A.; Crepaldi, A.; Cilento, F.; Manzoni, G.; Frantzeskakis, E.; Zacchigna, M.; van Heumen, E.; Huang, Y. K.; Golden, M. S.; Parmigiani, F.

2016-08-01

SmB6 is a mixed valence Kondo system resulting from the hybridization between localized f electrons and delocalized d electrons. We have investigated its out-of-equilibrium electron dynamics by means of time- and angle-resolved photoelectron spectroscopy. The transient electronic population above the Fermi level can be described by a time-dependent Fermi-Dirac distribution. By solving a two-temperature model that well reproduces the relaxation dynamics of the effective electronic temperature, we estimate the electron-phonon coupling constant λ to range from 0.13 ±0.03 to 0.04 ±0.01 . These extremes are obtained assuming a coupling of the electrons with either a phonon mode at 10 or 19 meV. A realistic value of the average phonon energy will give an actual value of λ within this range. Our results provide an experimental report on the material electron-phonon coupling, contributing to both the electronic transport and the macroscopic thermodynamic properties of SmB6.

Performance of Surface-Mount Ceramic and Solid Tantalum Capacitors for Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; MacDonald, Thomas L.; Hammoud, Ahmad; Gerber, Scott

1998-01-01

Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20 deg. C) to about liquid nitrogen temperature (-190 deg. C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications.

Superconductivity induced by interfacial coupling to magnons

NASA Astrophysics Data System (ADS)

Rohling, Niklas; Fjærbu, Eirik Løhaugen; Brataas, Arne

2018-03-01

We consider a thin normal metal sandwiched between two ferromagnetic insulators. At the interfaces, the exchange coupling causes electrons within the metal to interact with magnons in the insulators. This electron-magnon interaction induces electron-electron interactions, which in turn can result in p -wave superconductivity. We solve the gap equation numerically and estimate the critical temperature. In yttrium iron garnet (YIG)-Au-YIG trilayers, superconductivity sets in at temperatures somewhere in the interval between 1 and 10 K. EuO-Au-EuO trilayers require a lower temperature, in the range from 0.01 to 1 K.

Dense simple plasmas as high-temperature liquid simple metals

NASA Technical Reports Server (NTRS)

Perrot, F.

1990-01-01

The thermodynamic properties of dense plasmas considered as high-temperature liquid metals are studied. An attempt is made to show that the neutral pseudoatom picture of liquid simple metals may be extended for describing plasmas in ranges of densities and temperatures where their electronic structure remains 'simple'. The primary features of the model when applied to plasmas include the temperature-dependent self-consistent calculation of the electron charge density and the determination of a density and temperature-dependent ionization state.

Validity of Eucken formula and Stokes’ viscosity relation in high-temperature electronically excited gases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Istomin, V. A.; Kustova, E. V.; Mekhonoshina, M. A.

2014-12-09

In the present work we evaluate the accuracy of the Eucken formula and Stokes’ viscosity relation in high temperature non-equilibrium air species with electronic excitation. The thermal conductivity coefficient calculated using the exact kinetic theory methods is compared with that obtained applying approximate formulas in the temperature range 200–20000 K. A modification of the Eucken formula providing a good agreement with exact calculations is proposed. It is shown that the Stokes viscosity relation is not valid in electronically excited monoatomic gases at temperatures higher than 2000 K.

SiGe Based Low Temperature Electronics for Lunar Surface Applications

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

2012-01-01

The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

Nanoelectronic primary thermometry below 4 mK

PubMed Central

Bradley, D. I.; George, R. E.; Gunnarsson, D.; Haley, R. P.; Heikkinen, H.; Pashkin, Yu. A.; Penttilä, J.; Prance, J. R.; Prunnila, M.; Roschier, L.; Sarsby, M.

2016-01-01

Cooling nanoelectronic structures to millikelvin temperatures presents extreme challenges in maintaining thermal contact between the electrons in the device and an external cold bath. It is typically found that when nanoscale devices are cooled to ∼10 mK the electrons are significantly overheated. Here we report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. The low operating temperature is attributed to an optimized design that incorporates cooling fins with a high electron–phonon coupling and on-chip electronic filters, combined with low-noise electronic measurements. By immersing a Coulomb blockade thermometer in the 3He/4He refrigerant of a dilution refrigerator, we measure a lowest electron temperature of 3.7 mK and a trend to a saturated electron temperature approaching 3 mK. This work demonstrates how nanoelectronic samples can be cooled further into the low-millikelvin range. PMID:26816217

High-temperature electronics applications in space exploration

NASA Astrophysics Data System (ADS)

Jurgens, R. F.

1982-05-01

One of the most exciting applications of high-temperature electronics is related to the exploration of the planet Venus. On this planet the atmospheric temperatures range from about 170 K at elevations of 100 km to a searing 730 K near the surface. Mechanisms for exploring the atmosphere might include balloons, airplanes, surface landers, and surface-launched probes. Balloons, for example, could fly in the region from 20 (320 C at 22 bars) to 60 km (-20 C at 0.2 bar). Suitable balloon fabrics presently exclude excursions to lower altitudes; however, adequate electronic systems could survive to 325 C. Small airplanes would require more sophisticated electronics for guidance and control. Long life surface landers would most likely be developed first, as these could be used to measure long-term variations in weather. Ranging transponders would be important for ephemeris development, measurement of spin state, and studies of general relativity. Surface temperatures of 460 C and pressures of 90 bars present a challenge to the developers of such instruments. Other space applications for high-temperature electronics include transponders for the surface of Mercury, near solar drag-free orbiters, and deep atmospheric penetrators for Jupiter and Saturn. Each of these has its own particular problems with respect to instrumentation adequate to meet the desired scientific goals. This paper is primarily concerned with defining possible mission applications, the required electronic systems, and the approaches that are currently being studied for their development.

High-temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1982-01-01

One of the most exciting applications of high-temperature electronics is related to the exploration of the planet Venus. On this planet the atmospheric temperatures range from about 170 K at elevations of 100 km to a searing 730 K near the surface. Mechanisms for exploring the atmosphere might include balloons, airplanes, surface landers, and surface-launched probes. Balloons, for example, could fly in the region from 20 (320 C at 22 bars) to 60 km (-20 C at 0.2 bar). Suitable balloon fabrics presently exclude excursions to lower altitudes; however, adequate electronic systems could survive to 325 C. Small airplanes would require more sophisticated electronics for guidance and control. Long life surface landers would most likely be developed first, as these could be used to measure long-term variations in weather. Ranging transponders would be important for ephemeris development, measurement of spin state, and studies of general relativity. Surface temperatures of 460 C and pressures of 90 bars present a challenge to the developers of such instruments. Other space applications for high-temperature electronics include transponders for the surface of Mercury, near solar drag-free orbiters, and deep atmospheric penetrators for Jupiter and Saturn. Each of these has its own particular problems with respect to instrumentation adequate to meet the desired scientific goals. This paper is primarily concerned with defining possible mission applications, the required electronic systems, and the approaches that are currently being studied for their development.

Electron and ion dynamics study of iron in warm dense matter regime by time-resolved XAS measurements and from first-principles

NASA Astrophysics Data System (ADS)

Ogitsu, T.; Fernandez-Paãella, A.; Correa, A.; Engelhorn, K.; Barbrel, B.; Prendergast, D. G.; Pemmaraju, D.; Beckwith, M.; Kraus, D.; Hamel, S.; Cho, B. I.; Jin, L.; Wong, J.; Heinman, P.; Collins, G. W.; Falcone, R.; Ping, Y.

2016-10-01

We present a study of the electron-phonon coupling of warm dense iron upon femtosecond laser excitation by time-resolved x-ray absorption near edge spectroscopy (XANES). The dynamics of iron in electron-ion non-equilibrium conditions was studied using ab-initio density-functional-theory (DFT) simulations combined with the Two Temperature Model (TTM) where spatial inhomogeneity of electron (and ion) temperature(s) due to short ballistic electron transport length in iron was explicitly taken into consideration. Detailed comparison between our simulation results and experiments indicates that the ion temperature dependence on specific heat and on electron-phonon coupling also plays a relevant role in modeling the relaxation dynamics of electrons and ions. These results are the first experimental evidence of the suppression of the electron-phonon coupling factor of a transition metal at electron temperatures ranging 5000- 10000 K. This work was performed under DOE contract DE-AC52-07NA27344 with support from OFES Early Career program and LLNL LDRD program.

Electron Heating in Low Mach Number Perpendicular Shocks. II. Dependence on the Pre-shock Conditions

NASA Astrophysics Data System (ADS)

Guo, Xinyi; Sironi, Lorenzo; Narayan, Ramesh

2018-05-01

Recent X-ray observations of merger shocks in galaxy clusters have shown that the post-shock plasma is two-temperature, with the protons being hotter than the electrons. In this work, the second of a series, we investigate the efficiency of irreversible electron heating in perpendicular low Mach number shocks, by means of two-dimensional particle-in-cell simulations. We consider values of plasma beta (the ratio of thermal and magnetic pressures) in the range 4 ≲ β p0 ≲ 32, and sonic Mach number (the ratio of shock speed to pre-shock sound speed) in the range 2 ≲ M s ≲ 5, as appropriate for galaxy cluster shocks. As shown in Paper I, magnetic field amplification—induced by shock compression of the pre-shock field, or by strong proton cyclotron and mirror modes accompanying the relaxation of proton temperature anisotropy—can drive the electron temperature anisotropy beyond the threshold of the electron whistler instability. The growth of whistler waves breaks the electron adiabatic invariance, and allows for efficient entropy production. We find that the post-shock electron temperature T e2 exceeds the adiabatic expectation {T}e2,{ad} by an amount ({T}e2-{T}e2,{ad})/{T}e0≃ 0.044 {M}s({M}s-1) (here, T e0 is the pre-shock temperature), which depends only weakly on the plasma beta over the range 4 ≲ β p0 ≲ 32 that we have explored, as well as on the proton-to-electron mass ratio (the coefficient of ≃0.044 is measured for our fiducial {m}i/{m}e=49, and we estimate that it will decrease to ≃0.03 for the realistic mass ratio). Our results have important implications for current and future observations of galaxy cluster shocks in the radio band (synchrotron emission and Sunyaev–Zel’dovich effect) and at X-ray frequencies.

Magneto Transport of CVD Carbon in Artificial Opals

NASA Astrophysics Data System (ADS)

Wang, Lei; Yin, Ming; Arammash, Fauzi; Datta, Timir

2014-03-01

Magneto-transport of carbon inverse opal structures were investigated in the 2.5 to 300 K temperatures and magnetic fields in the 0-10T regime. Qualitatively, our observations lie between those reported by previous researchers. Over this temperature range, transport (in zero magnetic field) is non-metallic; the resistance decreased with rising temperature however the temperature dependent behavior is not activated, as observed with variable range hopping. In three-dimensions, such behavior can also be the result of weak localization and electron-electron interactions; in particular the change in conductivity is a polynomial in fractional powers of absolute temperature. At sub-helium temperature regimes the relative magneto resistance is measured to be ~ 0.1 percent per Tesla. Results of data analysis for several different scenarios will be reported. DOD award #60177-RT-H from the ARO.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jana, R. N.; Meikap, A. K.

The results of a comprehensive study of weak electron localization (WEL) and electron-electron interaction (EEI) effects in disordered V{sub 75}X{sub 25} (X = Pd, Al) alloys has been reported. The resistivity in absence of magnetic field shows a minimum at temperature T = T{sub m} and follows T{sup 1/2} law within the temperature range 5 K ≤ T ≤ T{sub m}, which suggests predominant EEI effect. Magnetoresistivity is positive due to strong spin-orbit interaction. The dephasing scattering time is dominated by the electron-phonon scattering. The electron-phonon scattering rate shows quadratic temperature dependence behavior, which is explained by the theory ofmore » incomplete dragging at the random scattering potential by phonons. The zero temperature scattering time strongly depends on the disorder and its magnitude decreases with increasing disorder.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Gopa, E-mail: gopa_mjs@igcar.gov.in; Das, C.R.; Albert, S.K.

Martensitic stainless steels find extensive applications due to their optimum combination of strength, hardness and wear-resistance in tempered condition. However, this class of steels is susceptible to embrittlement during tempering if it is carried out in a specific temperature range resulting in significant reduction in toughness. Embrittlement of as-normalised AISI 410 martensitic stainless steel, subjected to tempering treatment in the temperature range of 673–923 K was studied using Charpy impact tests followed by metallurgical investigations using field emission scanning electron and transmission electron microscopes. Carbides precipitated during tempering were extracted by electrochemical dissolution of the matrix and identified by X-raymore » diffraction. Studies indicated that temper embrittlement is highest when the steel is tempered at 823 K. Mostly iron rich carbides are present in the steel subjected to tempering at low temperatures of around 723 K, whereas chromium rich carbides (M{sub 23}C{sub 6}) dominate precipitation at high temperature tempering. The range 773–823 K is the transition temperature range for the precipitates, with both Fe{sub 2}C and M{sub 23}C{sub 6} types of carbides coexisting in the material. The nucleation of Fe{sub 2}C within the martensite lath, during low temperature tempering, has a definite role in the embrittlement of this steel. Embrittlement is not observed at high temperature tempering because of precipitation of M{sub 23}C{sub 6} carbides, instead of Fe{sub 2}C, preferentially along the lath and prior austenite boundaries. Segregation of S and P, which is widely reported as one of the causes for temper embrittlement, could not be detected in the material even through Auger electron spectroscopy studies. - Highlights: • Tempering behaviour of AISI 410 steel is studied within 673–923 K temperature range. • Temperature regime of maximum embrittlement is identified as 773–848 K. • Results show that type of carbide precipitation varies with temperature of tempering. • Mostly iron rich Fe{sub 2}C carbides are present in the embrittlement temperature range. • With the precipitation of M{sub 23}C{sub 6} carbides, recovery from the embrittlement begins.« less

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

NASA Technical Reports Server (NTRS)

Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

1993-01-01

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Effect of temperature on photosynthesis and growth in marine Synechococcus spp.

PubMed

Mackey, Katherine R M; Paytan, Adina; Caldeira, Ken; Grossman, Arthur R; Moran, Dawn; McIlvin, Matthew; Saito, Mak A

2013-10-01

In this study, we develop a mechanistic understanding of how temperature affects growth and photosynthesis in 10 geographically and physiologically diverse strains of Synechococcus spp. We found that Synechococcus spp. are able to regulate photochemistry over a range of temperatures by using state transitions and altering the abundance of photosynthetic proteins. These strategies minimize photosystem II (PSII) photodamage by keeping the photosynthetic electron transport chain (ETC), and hence PSII reaction centers, more oxidized. At temperatures that approach the optimal growth temperature of each strain when cellular demand for reduced nicotinamide adenine dinucleotide phosphate (NADPH) is greatest, the phycobilisome (PBS) antenna associates with PSII, increasing the flux of electrons into the ETC. By contrast, under low temperature, when slow growth lowers the demand for NADPH and linear ETC declines, the PBS associates with photosystem I. This favors oxidation of PSII and potential increase in cyclic electron flow. For Synechococcus sp. WH8102, growth at higher temperatures led to an increase in the abundance of PBS pigment proteins, as well as higher abundance of subunits of the PSII, photosystem I, and cytochrome b6f complexes. This would allow cells to increase photosynthetic electron flux to meet the metabolic requirement for NADPH during rapid growth. These PBS-based temperature acclimation strategies may underlie the larger geographic range of this group relative to Prochlorococcus spp., which lack a PBS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nemec, Patrik, E-mail: patrik.nemec@fstroj.uniza.sk; Malcho, Milan, E-mail: milan.malcho@fstroj.uniza.sk

This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heatmore » of electronic components in range from 250 to 740 W.« less

The temperature-dependency of the optical band gap of ZnO measured by electron energy-loss spectroscopy in a scanning transmission electron microscope

NASA Astrophysics Data System (ADS)

Granerød, Cecilie S.; Galeckas, Augustinas; Johansen, Klaus Magnus; Vines, Lasse; Prytz, Øystein

2018-04-01

The optical band gap of ZnO has been measured as a function of temperature using Electron Energy-Loss Spectroscopy (EELS) in a (Scanning) Transmission Electron Microscope ((S)TEM) from approximately 100 K up towards 1000 K. The band gap narrowing shows a close to linear dependency for temperatures above 250 K and is accurately described by Varshni, Bose-Einstein, Pässler and Manoogian-Woolley models. Additionally, the measured band gap is compared with both optical absorption measurements and photoluminescence data. STEM-EELS is here shown to be a viable technique to measure optical band gaps at elevated temperatures, with an available temperature range up to 1500 K and the benefit of superior spatial resolution.

Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

NASA Astrophysics Data System (ADS)

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

2018-02-01

Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T <20 K ) of the inelastic scattering rate (τi-1∝T ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1 ) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Temperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigations.

PubMed

Patil, Sumati; Datar, Suwarna; Dharmadhikari, C V

2018-03-01

Scanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I-V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I-t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I-t show 1/f2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I-V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples.

Defects and anharmonicity induced electron spectra of YBa2Cu3O7-δ superconductors

NASA Astrophysics Data System (ADS)

Singh, Anu; Indu, B. D.

2018-05-01

The effects of defects and anharmonicities on the electron density of states (EDOS) have been studied in high-temperature superconductors (HTS) adopting the many body quantum dynamical theory of electron Green's functions via a generalized Hamiltonian that includes the effects of electron-phonon interactions, anharmonicities and point impurities. The automatic emergence of pairons and temperature dependence of EDOS are appear as special feature of the theory. The results thus obtained and their numerical analysis for YBa2Cu3O7-δ superconductors clearly demonstrate that the presence of defects, anharmonicities and electron-phonon interactions modifies the behavior of EDOS over a wide range of temperature.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Superconducting active impedance converter

DOEpatents

Ginley, D.S.; Hietala, V.M.; Martens, J.S.

1993-11-16

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures.

Temporal variations of electron density and temperature in Kr/Ne/H2 photoionized plasma induced by nanosecond pulses from extreme ultraviolet source

NASA Astrophysics Data System (ADS)

Saber, I.; Bartnik, A.; Wachulak, P.; Skrzeczanowski, W.; Jarocki, R.; Fiedorowicz, H.

2017-06-01

Spectral investigations of low-temperature photoionized plasmas created in a Kr/Ne/H2 gas mixture were performed. The low-temperature plasmas were generated by gas mixture irradiation using extreme ultraviolet pulses from a laser-plasma source. Emission spectra in the ultraviolet/visible range from the photoionized plasmas contained lines that mainly corresponded to neutral atoms and singly charged ions. Temporal variations in the plasma electron temperature and electron density were studied using different characteristic emission lines at various delay times. Results, based on Kr II lines, showed that the electron temperature decreased from 1.7 to 0.9 eV. The electron densities were estimated using different spectral lines at each delay time. In general, except for the Hβ line, in which the electron density decreased from 3.78 × 1016 cm-3 at 200 ns to 5.77 × 1015 cm-3 at 2000 ns, most of the electron density values measured from the different lines were of the order of 1015 cm-3 and decreased slightly while maintaining the same order when the delay time increased. The time dependences of the measured and simulated intensities of a spectral line of interest were also investigated. The validity of the partial or full local thermodynamic equilibrium (LTE) conditions in plasma was explained based on time-resolved electron density measurements. The partial LTE condition was satisfied for delay times in the 200 ns to 1500 ns range. The results are summarized, and the dominant basic atomic processes in the gas mixture photoionized plasma are discussed.

High temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1981-01-01

The extension of the range of operating temperatures of electronic components and systems for planetary exploration is examined. In particular, missions which utilize balloon-borne instruments to study the Venusian and Jovian atmospheres are discussed. Semiconductor development and devices including power sources, ultrastable oscillators, transmitters, antennas, electromechanical devices, and deployment systems are addressed.

Nonextensive statistics and skin depth of transverse wave in collisional plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashemzadeh, M., E-mail: hashemzade@gmail.com

Skin depth of transverse wave in a collisional plasma is studied taking into account the nonextensive electron distribution function. Considering the kinetic theory for charge particles and using the Bhatnagar-Gross-Krook collision model, a generalized transverse dielectric permittivity is obtained. The transverse dispersion relation in different frequency ranges is investigated. Obtaining the imaginary part of the wave vector from the dispersion relation, the skin depth for these frequency ranges is also achieved. Profiles of the skin depth show that by increasing the q parameter, the penetration depth decreases. In addition, the skin depth increases by increasing the electron temperature. Finally, itmore » is found that in the high frequency range and high electron temperature, the penetration depth decreases by increasing the collision frequency. In contrast, by increasing the collision frequency in a highly collisional frequency range, the skin depth of transverse wave increases.« less

Viking 2 electron observations at Mars

NASA Technical Reports Server (NTRS)

Johnson, Francis S.; Hanson, William B.

1992-01-01

An analysis of the electron mode sweeps made in Viking 2 above the ionosphere is presented. An observation of the electron energy spectrum over the range 0 to 78 eV was recorded in 1 s and observations were made at intervals of 4 or 8 s. The concentrations and temperatures were highly variable in the altitude range 14,000 to 9000 km. Evidence for two Maxwellian components were present in most of the records. The general trend of concentration and temperature for the predominant component was from 2/cu cm and 100,000 K at 15,600 km to 5/cu cm at 220,000 K and 900 km, in good agreement with the Mars 3 observations of Gringauz et al. (1974). The higher-temperature component was generally characterized by a temperature near 400,000 K and concentrations near 0.1/cu cm. The electron plasma pressures near 800 km were about a factor of 20 lower than those obtained from Viking 1, the difference being much greater than expected from the normal distribution around the stagnation point in the shocked solar wind.

Temperature and intensity dependence of the performance of an electron-irradiated (AlGa)As/GaAs solar cell

NASA Technical Reports Server (NTRS)

Swartz, C. K.; Hart, R. E., Jr.

1979-01-01

The performance of a Hughes, liquid-phase epitaxial 2 centimeter-by-2 centimeter, (AlGa)As/GaAs solar cell was measured before and after irradiations with 1 MeV electrons to fluences of 1 x 10 to the 16th power electrons/sq cm. The temperature dependence of performance was measured over the temperature range 135 to 415 K at each fluence level. In addition, temperature dependences were measured at five intensity levels from 137 to 2.57 mW/sq cm before irradiation and after a fluence of 1 x 10 to the 16th power electrons/sq cm. For the intermediate fluences, performance was measured as a function of intensity at 298 K only.

Multipurpose setup for low-temperature conversion electron Mössbauer spectroscopy

NASA Astrophysics Data System (ADS)

Augustyns, V.; Trekels, M.; Gunnlaugsson, H. P.; Masenda, H.; Temst, K.; Vantomme, A.; Pereira, L. M. C.

2017-05-01

We describe an experimental setup for conversion electron Mössbauer spectroscopy (CEMS) at low temperature. The setup is composed of a continuous flow cryostat (temperature range of 4.2-500 K), detector housing, three channel electron multipliers, and corresponding electronics. We demonstrate the capabilities of the setup with CEMS measurements performed on a sample consisting of a thin enriched 57Fe film, with a thickness of 20 nm, deposited on a silicon substrate. We also describe exchangeable adaptations (lid and sample holder) which extend the applicability of the setup to emission Mössbauer spectroscopy as well as measurements under an applied magnetic field.

Electron and thermal transport via variable range hopping in MoSe2 single crystals

NASA Astrophysics Data System (ADS)

Suri, Dhavala; Patel, R. S.

2017-06-01

Bulk single crystal molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at ≃31 K. In the semiconducting phase (T > 31 K), the transport is best explained by the variable range hopping (VRH) model. Large magnitude of resistivity in the CPP mode indicates strong structural anisotropy. The Seebeck coefficient as a function of temperature measured in the range of 90-300 K also agrees well with the VRH model. The room temperature Seebeck coefficient is found to be 139 μV/K. VRH fittings of the resistivity and the Seebeck coefficient data indicate high degree of localization.

Auger electron spectroscopy and depth profile study of oxidation of modified 440C steel

NASA Technical Reports Server (NTRS)

Ferrante, J.

1974-01-01

Auger electron spectroscopy (AES) and sputtering were used to study selective oxidation of modified 440C steel. The sample was polycrystalline. Oxidation was performed on initially clean surfaces for pressures ranging from 1 x 10 to the minus 7th power to 1 x 10 to the minus 5th power torr and temperatures ranging from room temperature to 800 C. AES traces were taken during oxidation. In situ sputtering depth profiles are also obtained. A transition temperature is observed in the range 600 to 700 C for which the composition of the outer surface oxide changed from iron oxide to chromium oxide. Heating in vacuum about 5 x 10 to the minus 10 power torr to 700 C causes conversion of the iron oxide surface to chromium oxide.

A Wide Range Temperature Sensor Using SOI Technology

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik E.; Hammoud, Ahmad

2009-01-01

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

NASA Astrophysics Data System (ADS)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Electron heated target temperature measurements in petawatt laser experiments based on extreme ultraviolet imaging and spectroscopy.

PubMed

Ma, T; Beg, F N; MacPhee, A G; Chung, H-K; Key, M H; Mackinnon, A J; Patel, P K; Hatchett, S; Akli, K U; Stephens, R B; Chen, C D; Freeman, R R; Link, A; Offermann, D T; Ovchinnikov, V; Van Woerkom, L D

2008-10-01

Three independent methods (extreme ultraviolet spectroscopy, imaging at 68 and 256 eV) have been used to measure planar target rear surface plasma temperature due to heating by hot electrons. The hot electrons are produced by ultraintense laser-plasma interactions using the 150 J, 0.5 ps Titan laser. Soft x-ray spectroscopy in the 50-400 eV region and imaging at the 68 and 256 eV photon energies give a planar deuterated carbon target rear surface pre-expansion temperature in the 125-150 eV range, with the rear plasma plume averaging a temperature approximately 74 eV.

Wide-Temperature Electronics for Thermal Control of Nanosats

NASA Technical Reports Server (NTRS)

Dickman, John Ellis; Gerber, Scott

2000-01-01

This document represents a presentation which examines the wide and low-temperature electronics required for NanoSatellites. In the past, larger spacecraft used Radioisotope Heating Units (RHU's). The advantage of the use of these electronics is that they could eliminate or reduce the requirement for RHU's, reduce system weight and simplify spacecraft design by eliminating containment/support structures for RHU's. The Glenn Research Center's Wide/Low Temperature Power Electronics Program supports the development of power systems capable of reliable, efficient operation over wide and low temperature ranges. Included charts review the successes and failures of various electronic devices, the IRF541 HEXFET, The NE76118n-Channel GaAS MESFET, the Lithium Carbon Monofluoride Primary Battery, and a COTS DC-DC converter. The preliminary result of wide/low temperature testing of CTS and custom parts and power circuit indicate that through careful selection of components and technologies it is possible to design and build power circuits which operate from room temperature to near 100K.

Disorder dependence electron phonon scattering rate of V82Pd18 - xFex alloys at low temperature

NASA Astrophysics Data System (ADS)

Jana, R. N.; Meikap, A. K.

2018-04-01

We have systematically investigated the disorder dependence electron phonon scattering rate in three dimensional disordered V82Pd18 - xFex alloys. A minimum in temperature dependence resistivity curve has been observed at low temperature T =Tm. In the temperature range 5 K ≤ T ≤Tm the resistivity correction follows ρo 5 / 2T 1 / 2 law. The dephasing scattering time has been calculated from analysis of magnetoresistivity by weak localization theory. The electron dephasing time is dominated by electron-phonon scattering and follows anomalous temperature (T) and disorder (ρ0) dependence behaviour like τe-ph-1 ∝T2 /ρ0, where ρ0 is the impurity resistivity. The magnitude of the saturated dephasing scattering time (τ0) at zero temperature decreases with increasing disorder of the samples. Such anomalous behaviour of dephasing scattering rate is still unresolved.

Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Damron, Benny; Gray, Josh; Hammoud, Ahmad

2018-01-01

Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

Correlated phonons and the Tc-dependent dynamical phonon anomalies

NASA Astrophysics Data System (ADS)

Hakioğlu, T.; Türeci, H.

1997-11-01

Anomalously large low-temperature phonon anharmonicities can lead to static as well as dynamical changes in the low-temperature properties of the electron-phonon system. In this work, we focus our attention on the dynamically generated low-temperature correlations in an interacting electron-phonon system using a self-consistent dynamical approach in the intermediate coupling range. In the context of the model, the polaron correlations are produced by the charge-density fluctuations which are generated dynamically by the electron-phonon coupling. Conversely, the latter is influenced in the presence of the former. The purpose of this work is to examine the dynamics of this dual mechanism between the two using the illustrative Fröhlich model. In particular, the influence of the low-temperature phonon dynamics on the superconducting properties in the intermediate coupling range is investigated. The influence on the Holstein reduction factor as well as the enhancement in the zero-point fluctuations and in the electron-phonon coupling are calculated numerically. We also examine these effects in the presence of superconductivity. Within this model, the contribution of the electron-phonon interaction as one of the important elements in the mechanisms of superconductivity can reach values as high as 15-20% of the characteristic scale of the lattice vibrational energy. The second motivation of this work is to understand the nature of the Tc-dependent temperature anomalies observed in the Debye-Waller factor, dynamical pair correlations, and average atomic vibrational energies for a number of high-temperature superconductors. In our approach we do not claim nor believe that the electron-phonon interaction is the primary mechanism leading to high-temperature superconductivity. Nevertheless, our calculations suggest that the dynamically induced low-temperature phonon correlation model can account for these anomalies and illustrates their possible common origin. Finally, the relevance of incorporating these low-temperature effects into more realistic models of high-temperature superconductivity including both the charge and spin degrees and other similar ideas existing in the literature are discussed.

Effective temperature of an ultracold electron source based on near-threshold photoionization.

PubMed

Engelen, W J; Smakman, E P; Bakker, D J; Luiten, O J; Vredenbregt, E J D

2014-01-01

We present a detailed description of measurements of the effective temperature of a pulsed electron source, based on near-threshold photoionization of laser-cooled atoms. The temperature is determined by electron beam waist scans, source size measurements with ion beams, and analysis with an accurate beam line model. Experimental data is presented for the source temperature as a function of the wavelength of the photoionization laser, for both nanosecond and femtosecond ionization pulses. For the nanosecond laser, temperatures as low as 14 ± 3 K were found; for femtosecond photoionization, 30 ± 5 K is possible. With a typical source size of 25 μm, this results in electron bunches with a relative transverse coherence length in the 10⁻⁴ range and an emittance of a few nm rad. © 2013 Elsevier B.V. All rights reserved.

Experimental observation of electron-temperature-gradient turbulence in a laboratory plasma.

PubMed

Mattoo, S K; Singh, S K; Awasthi, L M; Singh, R; Kaw, P K

2012-06-22

We report the observation of electron-temperature-gradient (ETG) driven turbulence in the laboratory plasma of a large volume plasma device. The removal of unutilized primary ionizing and nonthermal electrons from uniform density plasma and the imposition and control of the gradient in the electron temperature (T[Symbol: see text] T(e)) are all achieved by placing a large (2 m diameter) magnetic electron energy filter in the middle of the device. In the dressed plasma, the observed ETG turbulence in the lower hybrid range of frequencies ν = (1-80 kHz) is characterized by a broadband with a power law. The mean wave number k perpendicular ρ(e) = (0.1-0.2) satisfies the condition k perpendicular ρ(e) ≤ 1, where ρ(e) is the electron Larmor radius.

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector.

PubMed

van Genderen, E; Clabbers, M T B; Das, P P; Stewart, A; Nederlof, I; Barentsen, K C; Portillo, Q; Pannu, N S; Nicolopoulos, S; Gruene, T; Abrahams, J P

2016-03-01

Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼ 0.013 e(-) Å(-2) s(-1)) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014).

Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.

2017-06-01

This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.

Experimental evaluation of cooling efficiency of the high performance cooling device

NASA Astrophysics Data System (ADS)

Nemec, Patrik; Malcho, Milan

2016-06-01

This work deal with experimental evaluation of cooling efficiency of cooling device capable transfer high heat fluxes from electric elements to the surrounding. The work contain description of cooling device, working principle of cooling device, construction of cooling device. Experimental part describe the measuring method of device cooling efficiency evaluation. The work results are presented in graphic visualization of temperature dependence of the contact area surface between cooling device evaporator and electronic components on the loaded heat of electronic components in range from 250 to 740 W and temperature dependence of the loop thermosiphon condenser surface on the loaded heat of electronic components in range from 250 to 740 W.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreev, V. V., E-mail: vvandreev@mail.ru; Vasileska, I., E-mail: ivonavasileska@yahoo.com; Korneeva, M. A., E-mail: korneevama@mail.ru

A pulse-periodic 2.45-GHz electron-cyclotron resonance plasma source on the basis of a permanent- magnet mirror trap has been constructed and tested. Variations in the discharge parameters and the electron temperature of argon plasma have been investigated in the argon pressure range of 1 × 10{sup –4} to 4 × 10{sup –3} Torr at a net pulsed input microwave power of up to 600 W. The plasma electron temperature in the above ranges of gas pressures and input powers has been measured by a Langmuir probe and determined using optical emission spectroscopy (OES) from the intensity ratios of spectral lines. Themore » OES results agree qualitatively and quantitatively with the data obtained using the double probe.« less

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bubon, O.; Thunder Bay Regional Research Institute, Thunder Bay, Ontario, P7A 7T1; Jandieri, K.

Although amorphous selenium (a-Se) has a long and successful history of application in optical and X-ray imaging, some of its fundamental properties are still puzzling. In particularly, the mechanism of carrier recombination following x-ray excitation and electric field and temperature dependences of the electron-hole pair creation energy (W{sub ehp}) remain unclear. Using the combination of X-ray photocurrent and pulse height spectroscopy measurements, we measure W{sub ehp} in a wide range of temperatures (218–320 K) and electric fields (10–100 V/µm) and show that the conventional columnar recombination model which assumes Langevin recombination within a column (a primary electron track) fails to explain experimentalmore » results in a wide range of electric fields and temperatures. The reason for the failure of the conventional model is revealed in this work, and the theory of the columnar recombination is modified to include the saturation of the recombination rate at high electric field in order to account for the experimental results in the entire range of fields and temperatures.« less

Low Temperature Testing of a Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital (A/D) Converter

NASA Technical Reports Server (NTRS)

Gerber, Scott S.; Hammond, Ahmad; Elbuluk, Malik E.; Patterson, Richard L.; Overton, Eric; Ghaffarian, Reza; Ramesham, Rajeshuni; Agarwal, Shri G.

2001-01-01

Power processing electronic systems, data acquiring probes, and signal conditioning circuits are required to operate reliably under harsh environments in many of NASA:s missions. The environment of the space mission as well as the operational requirements of some of the electronic systems, such as infrared-based satellite or telescopic observation stations where cryogenics are involved, dictate the utilization of electronics that can operate efficiently and reliably at low temperatures. In this work, radiation-hard CMOS 8-bit flash A/D converters were characterized in terms of voltage conversion and offset in the temperature range of +25 to -190 C. Static and dynamic supply currents, ladder resistance, and gain and offset errors were also obtained in the temperature range of +125 to -190 C. The effect of thermal cycling on these properties for a total of ten cycles between +80 and - 150 C was also determined. The experimental procedure along with the data obtained are reported and discussed in this paper.

Experimental plasma studies

NASA Technical Reports Server (NTRS)

Dunn, M. G.

1972-01-01

The rate coefficients for the reactions C(+) + e(-) + e(-) yields C + e(-) and CO(+) + e(-) yields C + O were measured over the electron temperature range of approximately 1500 deg K to 7000 deg K. The measurements were performed in CO that had expanded from equilibrium reservoir conditions of 7060 deg K at 17.3 atm pressure and from 6260 deg K at 10.0 atm pressure. Two RAM flight probes were used to measure electron density and electron temperature in the expanding flow of a shock tunnel. Experiments were performed in the inviscid flow with both probes and in the nozzle-wall boundary layer with the constant bias-voltage probe. The distributions of electron density and electron temperature were independently measured using voltage-swept thin-wire probes. Thin-wire Langmuir probes were also used to measure the electron-density and electron-temperature distributions in the boundary layer of a sharp flat plate located on the nozzle centerline. Admittance measurements were performed with the RAM C and RAM C-C S-band antennas in the presence of an ionized boundary layer.

Piezoelectric substrate effect on electron-acoustic phonon scattering in bilayer graphene

NASA Astrophysics Data System (ADS)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We have studied the effect of piezoelectric scattering as a function of electron temperature and distance between the sample and the substrate on electron-acoustic phonon scattering rate in Bilayer Graphene sitting on a piezoelectric substrate. We obtain approximate analytical result by neglecting the chiral nature of carriers and then proceed to obtain unapproximated numerical results for the scattering rate incorporating chirality of charge carriers. We find that on the incorporation of full numerical computation the magnitude as well as the power exponent both is affected with the power exponent changed from T3 to T3.31 in the low temperature range and to T6.98 dependence in the temperature range (>5K). We also find that the distance between the sample and substrate begins to strongly affect the scattering rate at temperatures above 10K. These calculation not only suggest the influencing effect of piezoelectric substrate on the transport properties of Dirac Fermions at very low temperatures but also open a channel to study low dimension structures by probing piezoelectric acoustical phonons.

Hybrid thermionic-photovoltaic converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datas, A.

2016-04-04

A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligiblemore » electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.« less

Precipitation in Ni-Si during electron and ion irradiation

NASA Astrophysics Data System (ADS)

Lucas, G. E.; Zama, T.; Ishino, S.

1986-11-01

This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

Simultaneous in situ electron temperature comparisons using Alouette 2 probe and plasma resonance data

NASA Technical Reports Server (NTRS)

Benson, R. F.

1973-01-01

The electron temperatures deduced from Alouette 2 diffuse resonance observations are compared with the temperature obtained from the Alouette 2 cylindrical electrostatic probe experiment using data from 5 mid-to-high latitude telemetry stations. The probe temperature is consistently higher than the diffuse resonance temperature. The average difference ranged from approximately 10% to 40% with the lower values occurring at the lowest altitudes sampled (near 500 km) and at high latitudes (dip latitude greater than 55 deg), and the larger values occurring at high altitudes and lower latitudes. The discrepancy appears to be of geophysical origin since it is dependent on the location of the data sample. The present observations support the view that the often observed radar backscatter - probe electron temperature discrepancy is also of geophysical origin.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

WE-E-18A-05: Bremsstrahlung of Laser-Plasma Interaction at KeV Temperature: Forward Dose and Attenuation Factors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saez-Beltran, M; Fernandez Gonzalez, F

2014-06-15

Purpose: To obtain an analytical empirical formula for the photon dose source term in forward direction from bremsstrahlung generated from laser-plasma accelerated electron beams in aluminum solid targets, with electron-plasma temperatures in the 10–100 keV energy range, and to calculate transmission factors for iron, aluminum, methacrylate, lead and concrete and air, materials most commonly found in vacuum chamber labs. Methods: Bremsstrahlung fluence is calculated from the convolution of thin-target bremsstrahlung spectrum for monoenergetic electrons and the relativistic Maxwell-Juettner energy distribution for the electron-plasma. Unattenuatted dose in tissue is calculated by integrating the photon spectrum with the mass-energy absorption coefficient. Formore » the attenuated dose, energy dependent absorption coefficient, build-up factors and finite shielding correction factors were also taken into account. For the source term we use a modified formula from Hayashi et al., and we fitted the proportionality constant from experiments with the aid of the previously calculated transmission factors. Results: The forward dose has a quadratic dependence on electron-plasma temperature: 1 joule of effective laser energy transferred to the electrons at 1 m in vacuum yields 0,72 Sv per MeV squared of electron-plasma temperature. Air strongly filters the softer part of the photon spectrum and reduce the dose to one tenth in the first centimeter. Exponential higher energy tail of maxwellian spectrum contributes mainly to the transmitted dose. Conclusion: A simple formula for forward photon dose from keV range temperature plasma is obtained, similar to those found in kilovoltage x-rays but with higher dose per dissipated electron energy, due to thin target and absence of filtration.« less

Unusual temperature dependence of the dissociative electron attachment cross section of 2-thiouracil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kopyra, Janina; Abdoul-Carime, Hassan; Université Lyon 1, Villeurbanne

At low energies (<3 eV), molecular dissociation is controlled by dissociative electron attachment for which the initial step, i.e., the formation of the transient negative ion, can be initiated by shape resonance or vibrational Feshbach resonance (VFR) mediated by the formation of a dipole bound anion. The temperature dependence for shape-resonances is well established; however, no experimental information is available yet on the second mechanism. Here, we show that the dissociation cross section for VFRs mediated by the formation of a dipole bound anion decreases as a function of a temperature. The change remains, however, relatively small in the temperaturemore » range of 370-440 K but it might be more pronounced at the extended temperature range.« less

Measurement of non-Maxwellian electron velocity distributions in a reflex discharge

NASA Technical Reports Server (NTRS)

Phipps, C. R., Jr.; Bershader, D.

1978-01-01

The results of a ruby laser Thomson scattering study of the space and time-resolved electron velocity distributions in a pulsed Penning discharge in hydrogen are presented. Electron densities were to the order of 10 to the 13th/cu cm and temperatures were roughly 3 eV. This point is just prior to the cessation of the discharge ohmic heating pulse. For magnetic strengths less than 200 G, Maxwellian distributions were found over an energy range six times thermal energy. Temperatures agreed with Langmuir probe data. For fields of 450 G, chaotic plasma potentials were observed to be unstable and the Thomson scattering showed that the electron velocity distributions had central temperatures of 2 eV and wing temperatures of 15-12 eV.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Temperature dependence of the fundamental optical absorption edge in crystals and disordered semiconductors

NASA Astrophysics Data System (ADS)

Grein, C. H.; John, Sajeev

1989-04-01

We present a first principles theory of the temperature dependence of the Urbach optical absorption edge in crystals and disordered semiconductors which incorporates the effects of short range correlated static disorder and the non-adiabatic quantum dynamics of the coupled electron-phonon system. At finite temperatures the dominant features of the Urbach tail are accounted for by multiple phonon absorption and emission side bands which accompany the optically induced electronic transition and which provide a dynamic polaronic potential well that localizes the electron. Excellent agreement is found with experimental data on both crystalline and amorphous silicon.

Two-dimensional electron gas in monolayer InN quantum wells

DOE PAGES

Pan, Wei; Dimakis, Emmanouil; Wang, George T.; ...

2014-11-24

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Thermal flux limited electron Kapitza conductance in copper-niobium multilayers

DOE PAGES

Cheaito, Ramez; Hattar, Khalid Mikhiel; Gaskins, John T.; ...

2015-03-05

The interplay between the contributions of electron thermal flux and interface scattering to the Kapitza conductance across metal-metal interfaces through measurements of thermal conductivity of copper-niobium multilayers was studied. Thermal conductivities of copper-niobium multilayer films of period thicknesses ranging from 5.4 to 96.2 nm and sample thicknesses ranging from 962 to 2677 nm are measured by time-domain thermoreflectance over a range of temperatures from 78 to 500 K. The Kapitza conductances between the Cu and Nb interfaces in multilayer films are determined from the thermal conductivities using a series resistor model and are in good agreement with the electron diffusemore » mismatch model. The results for the thermal boundary conductance between Cu and Nb are compared to literature values for the thermal boundary conductance across Al-Cu and Pd-Ir interfaces, and demonstrate that the interface conductance in metallic systems is dictated by the temperature derivative of the electron energy flux in the metallic layers, rather than electron mean free path or scattering processes at the interface.« less

Parametric dependence of ion temperature and electron density in the SUMMA hot-ion plasma using laser light scattering and emission spectroscopy

NASA Technical Reports Server (NTRS)

Snyder, A.; Patch, R. W.; Lauver, M. R.

1980-01-01

Hot-ion plasma experiments were conducted in the NASA Lewis SUMMA facility. A steady-state modified Penning discharge was formed by applying a radially inward dc electric field of several kilovolts near the magnetic mirror maxima. Results are reported for a hydrogen plasma covering a wide range in midplane magnetic flux densities from 0.5 to 3.37 T. Input power greater than 45 kW was obtained with water-cooled cathodes. Steady-state plasmas with ion kinetic temperatures from 18 to 830 eV were produced and measured spectroscopically. These ion temperatures were correlated with current, voltage, and magnetic flux density as the independent variables. Electron density measurements were made using an unusually sensitive Thomson scattering apparatus. The measured electron densities range from 2.1 x 10 to the 11th to 6.8 x 10 to the 12th per cu cm.

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Comprehensive Evaluation of Power Supplies at Cryogenic Temperatures for Deep Space Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Gerber, Scott; Hammoud, Ahmad; Elbuluk, Malik E.; Lyons, Valerie (Technical Monitor)

2002-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many future space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environments, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. DC/DC converters are widely used in space power systems in the areas of power management, conditioning, and control. As part of the on-going Low Temperature Electronics Program at NASA, several commercial-off-the-shelf (COTS) DC/DC converters, with specifications that might fit the requirements of specific future space missions have been selected for investigation at cryogenic temperatures. The converters have been characterized in terms of their performance as a function of temperature in the range of 20 C to - 180 C. These converters ranged in electrical power from 8 W to 13 W, input voltage from 9 V to 72 V and an output voltage of 3.3 V. The experimental set-up and procedures along with the results obtained on the converters' steady state and dynamic characteristics are presented and discussed.

Recombination of electrons with NH4/+/-/NH3/n-series ions

NASA Technical Reports Server (NTRS)

Huang, C.-M.; Biondi, M. A.; Johnsen, R.

1976-01-01

The paper examines the recombination of electrons with ammonium-series cluster ions, NH4(+)-(NH3)n, for two reasons: (1) NH4(+) may be a significant ion in the lower atmospheres of the earth and the outer planets, and (2) to investigate the weak temperature dependence of the cluster ion's recombination coefficient. A microwave afterglow mass spectrometer was used to determine the recombination coefficients for the first five members of the ammonium series, (18+) through (86+), at temperatures between 200 and 410 K. The electron temperature dependence of the recombination coefficient was determined for (35+) and (52+), the n = 1 and 2 cluster ions, over the temperature range 300-3000 K.

Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

NASA Astrophysics Data System (ADS)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

2014-02-01

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi5Ti3FeO15 ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200-873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property.

Magnon-induced interband spin-flip scattering contribution to resistivity and magnetoresistance in a nanocrystalline itinerant-electron ferromagnet: Effect of crystallite size

NASA Astrophysics Data System (ADS)

Madduri, P. V. Prakash; Kaul, S. N.

2017-05-01

We report the results of an exhaustive study of `zero-field' electrical resistivity ρ (T ) and magnetoresistance (MR) (in magnetic fields up to 90 kOe) over the temperature range 1.8-300 K in nanocrystalline (nc-) Ni with average crystallite size d ranging from 10 nm to 40 nm. A quantitative comparison of our results with the predictions of the recent self-consistent calculations permits us to unambiguously identify the scattering mechanisms responsible for ρ (T ) and MR in different temperature ranges and accurately determine their relative magnitudes in nc-Ni samples of different d . Like in bulk 3 d transition metal ferromagnets, ρ varies with temperature as T2 at T ≲15 K. Contrary to the widely-held view that the T2 variation of ρ at low temperatures arises from the electron-magnon (e -m ) scattering, this contribution to ρ (T ) is shown to originate from the electron-electron (Baber) scattering. In the temperature range 15 K≤T ≤300 K, the phonon-induced non-spin-flip (NSF) intraband [i.e., s↑↓-s↑↓ , d↑↓-d↑↓ electron-phonon (e -p )] scattering and magnon-induced spin-flip (SF) interband (i.e., s↑↓-d↓↑e -m ) scattering contributions completely account for the intrinsic resistivity. The former contribution dominates over the latter at T >T whereas the reverse is true at temperatures 15 K ≤T T , ρe -m(T ,H =0 ) becomes comparable in magnitude to ρe -p(T ,H =0 ) for d ≥25 nm. By contrast, the MR in nc-Ni is entirely due to the s↑↓-d↓↑e -m scattering. The present work clearly brings out the importance of the thermal renormalization of magnon mass (caused mainly by the magnon-magnon interactions) over the temperature range 15 K≤T ≤300 K. Irrespective of the value of d (including the bulk, d =∞ ), phonon-induced s↑↓-s↑↓ , d↑↓-d↑↓ transitions are more frequent than the e -p s↑↓-d↑↓ transitions over the entire temperature range 1.8 K≤T ≤300 K. The saturation magnetization at 0 K, spin wave stiffness at 0 K, Debye temperature as well as the parameters that are a direct measure of the strength of e -p coupling, e -m coupling, and level of suppression of e -m scattering by external magnetic field, all exhibit power law variations with d . The power law behavior asserts that the average crystallite size is the dominant length scale so far as the magnetism, electrical transport, and magnetotransport in nc-Ni are concerned.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

METHOD FOR REDUCING THE IMPURITY RESISTIVITY OF SODIUM

DOEpatents

Post, R.F.; Taylor, C.E.

1963-08-13

The inherent resistivity of sodium, at cryogenic temperatures, can be reduced by clustering the impurity atoms within the crystal latiice structure of the sodium, thereby reducing the effective electron collision cross section and thus reducing the number of collisions between the electrons and such lattice imperfections. The clustering is effected by heating the sodium to a temperature approaching its melting point, and maintaining the temperature for a period of time ranging generally from two to six days. (AEC)

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

PubMed

Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

2017-02-08

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

Growth behavior of carbon nanotubes on multilayered metal catalyst film (Al/Fe/Mo) in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretzky, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-03-01

The temperature- and time- dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600 - 1100 ^oC temperature range in these studies, narrower temperature ranges were determined for the growth of aligned multi-walled carbon nanotubes (MWCNTs) and single-walled carbon nanotubes (SWCNTs). Aligned MWCNT growth is favored at lower temperatures ( ˜700 ^oC). At 900 ^oC, in contrast to earlier work, double-walled carbon nanotubes (DWCNTs) are found more abundant than SWCNTs. At further elevated temperature, highly defective carbon structures are produced. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long growth durations. Atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, and Raman spectroscopy are used to characterize the catalyst and various types of CNTs.

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

PubMed Central

van Genderen, E.; Clabbers, M. T. B.; Das, P. P.; Stewart, A.; Nederlof, I.; Barentsen, K. C.; Portillo, Q.; Pannu, N. S.; Nicolopoulos, S.; Gruene, T.; Abrahams, J. P.

2016-01-01

Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e− Å−2 s−1) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014). PMID:26919375

Longitudinal and transverse spin dynamics of donor-bound electrons in fluorine-doped ZnSe: Spin inertia versus Hanle effect

NASA Astrophysics Data System (ADS)

Heisterkamp, F.; Zhukov, E. A.; Greilich, A.; Yakovlev, D. R.; Korenev, V. L.; Pawlis, A.; Bayer, M.

2015-06-01

The spin dynamics of strongly localized donor-bound electrons in fluorine-doped ZnSe epilayers is studied using pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time T1 in a wide range of magnetic fields, temperatures, and pump densities. The T1 time of the donor-bound electron spin of about 1.6 μ s remains nearly constant for external magnetic fields varied from zero up to 2.5 T (Faraday geometry) and in a temperature range 1.8-45 K. These findings impose severe restrictions on possible spin relaxation mechanisms. In our opinion they allow us to rule out scattering between free and donor-bound electrons, jumping of electrons between different donor centers, scattering between phonons and donor-bound electrons, and with less certainty charge fluctuations in the environment of the donors caused by the 1.5 ps pulsed laser excitation.

Ab initio calculation of electron–phonon coupling in monoclinic β-Ga{sub 2}O{sub 3} crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, Krishnendu, E-mail: kghosh3@buffalo.edu; Singisetti, Uttam, E-mail: uttamsin@buffalo.edu

2016-08-15

The interaction between electrons and vibrational modes in monoclinic β-Ga{sub 2}O{sub 3} is theoretically investigated using ab-initio calculations. The large primitive cell of β-Ga{sub 2}O{sub 3} gives rise to 30 phonon modes all of which are taken into account in transport calculation. The electron-phonon interaction is calculated under density functional perturbation theory and then interpolated using Wannier–Fourier interpolation. The long-range interaction elements between electrons and polar optical phonon (POP) modes are calculated separately using the Born effective charge tensor. The direction dependence of the long-range POP coupling in a monoclinic crystal is explored and is included in the transport calculations.more » Scattering rate calculations are done using the Fermi golden rule followed by solving the Boltzmann transport equation using the Rode's method to estimate low field mobility. A room temperature mobility of 115 cm{sup 2}/V s is observed. Comparison with recent experimentally reported mobility is done for a wide range of temperatures (30 K–650 K). It is also found that the POP interaction dominates the electron mobility under low electric field conditions. The relative contribution of the different POP modes is analyzed and the mode 21 meV POP is found to have the highest impact on low field electron mobility at room temperature.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Atomistic simulation of femtosecond laser pulse interactions with a copper film: Effect of dependency of penetration depth and reflectivity on electron temperature

NASA Astrophysics Data System (ADS)

Amouye Foumani, A.; Niknam, A. R.

2018-01-01

The response of copper films to irradiation with laser pulses of fluences in the range of 100-6000 J/m2 is simulated by using a modified combination of a two-temperature model (TTM) and molecular dynamics (MD). In this model, the dependency of the pulse penetration depth and the reflectivity of the target on electron temperature are taken into account. Also, the temperature-dependent electron-phonon coupling factor, electron thermal conductivity, and electron heat capacity are used in the simulations. Based on this model, the dependence of the integral reflectivity on pulse fluence, the changes in the film thickness, and the evolution of density and electron and lattice temperatures are obtained. Moreover, snapshots that show the melting and disintegration processes are presented. The disintegration starts at a fluence of 4200 J/m2, which corresponds with an absorbed fluence of 616 J/m2. The calculated values of integral reflectivity are in good agreement with the experimental data. The inclusion of such temperature-dependent absorption models in the TTM-MD method would facilitate the comparison of experimental data with simulation results.

Design and construction of Thermoelectric Footwear Heating System for illness feet.

PubMed

Işik, Hakan

2005-12-01

In this study, a Thermoelectric Footwear Heating System is developed to use in cold weather conditions. The temperature is controlled by an analog electronic control system. Thermoelectric module is used to heat the bottom of the foot. A negative temperature coefficient (NTC) temperature sensor is used to sense the temperature and the temperature is controlled by an electronic circuit proportionally. A 3.5 V, 5000 mAh rechargeable battery is used as the power source. The temperature range of the system is between +15 degrees C and +50 degrees C. Developed footwear heating system is tested against various temperature conditions, and offer better results in the case of heating the illness feet.

Slowing down of alpha particles in ICF DT plasmas

NASA Astrophysics Data System (ADS)

He, Bin; Wang, Zhi-Gang; Wang, Jian-Guo

2018-01-01

With the effects of the projectile recoil and plasma polarization considered, the slowing down of 3.54 MeV alpha particles is studied in inertial confinement fusion DT plasmas within the plasma density range from 1024 to 1026 cm-3 and the temperature range from 100 eV to 200 keV. It includes the rate of the energy change and range of the projectile, and the partition fraction of its energy deposition to the deuteron and triton. The comparison with other models is made and the reason for their difference is explored. It is found that the plasmas will not be heated by the alpha particle in its slowing down the process once the projectile energy becomes close to or less than the temperature of the electron or the deuteron and triton in the plasmas. This leads to less energy deposition to the deuteron and triton than that if the recoil of the projectile is neglected when the temperature is close to or higher than 100 keV. Our model is found to be able to provide relevant, reliable data in the large range of the density and temperature mentioned above, even if the density is around 1026 cm-3 while the deuteron and triton temperature is below 500 eV. Meanwhile, the two important models [Phys. Rev. 126, 1 (1962) and Phys. Rev. E 86, 016406 (2012)] are found not to work in this case. Some unreliable data are found in the last model, which include the range of alpha particles and the electron-ion energy partition fraction when the electron is much hotter than the deuteron and triton in the plasmas.

Divertor electron temperature and impurity diffusion measurements with a spectrally resolved imaging radiometer.

PubMed

Clayton, D J; Jaworski, M A; Kumar, D; Stutman, D; Finkenthal, M; Tritz, K

2012-10-01

A divertor imaging radiometer (DIR) diagnostic is being studied to measure spatially and spectrally resolved radiated power P(rad)(λ) in the tokamak divertor. A dual transmission grating design, with extreme ultraviolet (~20-200 Å) and vacuum ultraviolet (~200-2000 Å) gratings placed side-by-side, can produce coarse spectral resolution over a broad wavelength range covering emission from impurities over a wide temperature range. The DIR can thus be used to evaluate the separate P(rad) contributions from different ion species and charge states. Additionally, synthetic spectra from divertor simulations can be fit to P(rad)(λ) measurements, providing a powerful code validation tool that can also be used to estimate electron divertor temperature and impurity transport.

Effect of mechanical loading on the electrical durability of polymers

NASA Astrophysics Data System (ADS)

Slutsker, A. I.; Veliev, T. M.; Alieva, I. K.; Alekperov, V. A.; Polikarpov, Yu. I.; Karov, D. D.

2017-01-01

A decrease in the electrical durability, which is defined as an amount of time required for dielectric breakdown at a constant electric field strength, of polyethylene and Lavsan (polyethylene terephthalate) films under tensile loading is registered in a temperature range from 100 to 300 K. It is established that the pulling apart of the axes of neighbor chain molecules in consequence of tensile loading gives rise to a decrease in the energy level of the intermolecular electron traps. In the amorphous region of a polymer, this accelerates the release of electrons from the traps through over-barrier transitions at higher temperatures ranging from about 230 to 350 K and quantum tunneling transitions at lower temperatures in the range from about 80 to 200 K. As a result, the time required for the formation of a critical space charge, i.e., the waiting period of dielectric breakdown, decreases, which means a reduction in the electrical durability of polymers.

Evidence for the absence of electron-electron Coulomb interaction quantum correction to the anomalous Hall effect in Co2FeSi Heusler-alloy thin films

NASA Astrophysics Data System (ADS)

Hazra, Binoy Krishna; Kaul, S. N.; Srinath, S.; Raja, M. Manivel; Rawat, R.; Lakhani, Archana

2017-11-01

Electrical (longitudinal) resistivity ρx x, at H =0 and H =80 kOe, anomalous Hall resistivity ρxy A H, and magnetization M , have been measured at different temperatures in the range 5-300 K on the Co2FeSi (CFS) Heusler-alloy thin films, grown on Si(111) substrate, with thickness ranging from 12 to 100 nm. At fixed fields H =0 and H =80 kOe, ρx x(T ) goes through a minimum at T =Tmin (which depends on the film thickness) in all the CFS thin films. In sharp contrast, both the anomalous Hall coefficient RA and ρxy A H monotonously increase with temperature without exhibiting a minimum. Elaborate analyses of ρx x, RA, and ρxy A H establishes the following. (i) The enhanced electron-electron Coulomb interaction (EEI) quantum correction (QC) is solely responsible for the upturn in "zero-field" and "in-field" ρx x(T ) at T

Quasi-optical design for systems to diagnose the electron temperature and density fluctuations on EAST

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Qifo; Liu, Yong; Zhao, Hailin, E-mail: zhaohailin@ipp.ac.cn

A system to simultaneously diagnose the electron temperature and density fluctuations is proposed for Experimental Advanced Superconducting Tokamak device. This system includes a common quasi-optical antenna, a correlation electron cyclotron emission (CECE) system that is used to measure the electron temperature fluctuations and a Doppler backscattering (DBS) system that is used to measure the electron density fluctuations. The frequency range of the proposed CECE system is 108-120 GHz, and this corresponds to a radial coverage of normalized radius ((R − R{sub 0})/a, R{sub 0} = 1850 mm, a = 450 mm) from 0.2 to 0.67 for the plasma operation withmore » a toroidal magnetic field of 2.26 T. This paper focuses on the design of the quasi-optical antenna and aims at optimizing the poloidal resolution for different frequency bands. An optimum result gives the beam radius for the CECE system of 13-15 mm and this corresponds to a wave number range of k{sub θ} < 2.4 cm{sup −1}. The beam radius is 20-30 mm for V band (50-75 GHz) and 15-20 mm for W band (75-110 GHz).« less

Theoretical studies of dissociative recombination

NASA Technical Reports Server (NTRS)

Guberman, S. L.

1985-01-01

The calculation of dissociative recombination rates and cross sections over a wide temperature range by theoretical quantum chemical techniques is described. Model calculations on electron capture by diatomic ions are reported which illustrate the dependence of the rates and cross sections on electron energy, electron temperature, and vibrational temperature for three model crossings of neutral and ionic potential curves. It is shown that cross sections for recombination to the lowest vibrational level of the ion can vary by several orders of magnitude depending upon the position of the neutral and ionic potential curve crossing within the turning points of the v = 1 vibrational level. A new approach for calculating electron capture widths is reported. Ab initio calculations are described for recombination of O2(+) leading to excited O atoms.

Unified first principles description from warm dense matter to ideal ionized gas plasma: electron-ion collisions induced friction.

PubMed

Dai, Jiayu; Hou, Yong; Yuan, Jianmin

2010-06-18

Electron-ion interactions are central to numerous phenomena in the warm dense matter (WDM) regime and at higher temperature. The electron-ion collisions induced friction at high temperature is introduced in the procedure of ab initio molecular dynamics using the Langevin equation based on density functional theory. In this framework, as a test for Fe and H up to 1000 eV, the equation of state and the transition of electronic structures of the materials with very wide density and temperature can be described, which covers a full range of WDM up to high energy density physics. A unified first principles description from condensed matter to ideal ionized gas plasma is constructed.

Measurement of the electron-impact transfer rate coefficients between the Kr(1s) states in an afterglow discharge

NASA Astrophysics Data System (ADS)

Qiu, Jie; Cheng, Zhi-Wen; Zhu, Xi-Ming; Pu, Yi-Kang

2018-04-01

The rate coefficients for the electron-impact transfer from Kr(1s5) to Kr(1s4) and from Kr(1s3) to Kr(1s2) are measured in the electron temperature (T e) range between 0.07 eV and 1 eV. In the afterglow of a capacitive krypton discharge at a fixed pressure of 20 mTorr and a peak rf power ranging from 4 to 128 W, the densities of four krypton 1s states, the electron temperature and the electron density are measured by diode laser absorption, a Langmuir probe and a microwave interferometer, respectively. With these measured quantities, the rate coefficients are obtained from a population model for krypton metastable states. The measured rate coefficients are compared with those derived from the excitation cross sections of Kr metastable states calculated by different R-matrix models. It is found that our results agree best with that from Allan et al [1]. Moreover, we analyze the assumptions made in the population model and discuss their possible impact on the accuracy of the measured rate coefficients, especially for the low T e (0.1-0.2 eV) range and a higher T e (0.4-1 eV) range.

Novel AlInN/GaN integrated circuits operating up to 500 °C

NASA Astrophysics Data System (ADS)

Gaska, R.; Gaevski, M.; Jain, R.; Deng, J.; Islam, M.; Simin, G.; Shur, M.

2015-11-01

High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach t provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-K passivation/gate dielectrics enable high temperature operation. The feasibility of the developed technology was confirmed by fabrication and testing of the high temperature inverter and differential amplifier ICs using AlInN/GaN heterostructures. The developed ICs showed stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns at temperatures as high as 500 °C.

Extreme temperature packaging: challenges and opportunities

NASA Astrophysics Data System (ADS)

Johnson, R. Wayne

2016-05-01

Consumer electronics account for the majority of electronics manufactured today. Given the temperature limits of humans, consumer electronics are typically rated for operation from -40°C to +85°C. Military applications extend the range to -65°C to +125°C while underhood automotive electronics may see +150°C. With the proliferation of the Internet of Things (IoT), the goal of instrumenting (sensing, computation, transmission) to improve safety and performance in high temperature environments such as geothermal wells, nuclear reactors, combustion chambers, industrial processes, etc. requires sensors, electronics and packaging compatible with these environments. Advances in wide bandgap semiconductors (SiC and GaN) allow the fabrication of high temperature compatible sensors and electronics. Integration and packaging of these devices is required for implementation into actual applications. The basic elements of packaging are die attach, electrical interconnection and the package or housing. Consumer electronics typically use conductive adhesives or low melting point solders for die attach, wire bonds or low melting solder for electrical interconnection and epoxy for the package. These materials melt or decompose in high temperature environments. This paper examines materials and processes for high temperature packaging including liquid transient phase and sintered nanoparticle die attach, high melting point wires for wire bonding and metal and ceramic packages. The limitations of currently available solutions will also be discussed.

Non-monotonic behavior of electron temperature in argon inductively coupled plasma and its analysis via novel electron mean energy equation

NASA Astrophysics Data System (ADS)

Zhao, Shu-Xia

2018-03-01

In this work, the behavior of electron temperature against the power in argon inductively coupled plasma is investigated by a fluid model. The model properly reproduces the non-monotonic variation of temperature with power observed in experiments. By means of a novel electron mean energy equation proposed for the first time in this article, this electron temperature behavior is interpreted. In the overall considered power range, the skin effect of radio frequency electric field results in localized deposited power density, responsible for an increase of electron temperature with power by means of one parameter defined as power density divided by electron density. At low powers, the rate fraction of multistep and Penning ionizations of metastables that consume electron energy two times significantly increases with power, which dominates over the skin effect and consequently leads to the decrease of temperature with power. In the middle power regime, a transition region of temperature is given by the competition between the ionizing effect of metastables and the skin effect of electric field. The power location where the temperature alters its trend moves to the low power end as increasing the pressure due to the lack of metastables. The non-monotonic curve of temperature is asymmetric at the short chamber due to the weak role of skin effect in increasing the temperature and tends symmetric when axially prolonging the chamber. Still, the validity of the fluid model in this prediction is estimated and the role of neutral gas heating is guessed. This finding is helpful for people understanding the different trends of temperature with power in the literature.

Limits of applicability of a two-temperature model under nonuniform heating of metal by an ultrashort laser pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakov, D S; Yakovlev, E B

The heating of metals (silver and aluminium) by ultrashort laser pulses is analysed proceeding from a spatially nonuniform kinetic equation for the electron distribution function. The electron subsystem thermalisation is estimated in a wide range of absorbed pulse energy density. The limits of applicability are determined for the two-temperature model. (interaction of laser radiation with matter)

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

Important Variation in Vibrational Properties of LiFePO4 and FePO4 Induced by Magnetism

PubMed Central

Seifitokaldani, Ali; Gheribi, Aïmen E.; Phan, Anh Thu; Chartrand, Patrice; Dollé, Mickaël

2016-01-01

A new thermodynamically self-consistent (TSC) method, based on the quasi-harmonic approximation (QHA), is used to obtain the Debye temperatures of LiFePO4 (LFP) and FePO4 (FP) from available experimental specific heat capacities for a wide temperature range. The calculated Debye temperatures show an interesting critical and peculiar behavior so that a steep increase in the Debye temperatures is observed by increasing the temperature. This critical behavior is fitted by the critical function and the adjusted critical temperatures are very close to the magnetic phase transition temperatures in LFP and FP. Hence, the critical behavior of the Debye temperatures is correlated with the magnetic phase transitions in these compounds. Our first-principle calculations support our conjecture that the change in electronic structures, i.e. electron density of state and electron localization function, and consequently the change in thermophysical properties due to the magnetic transition may be the reason for the observation of this peculiar behavior of the Debye temperatures. PMID:27604551

Important Variation in Vibrational Properties of LiFePO4 and FePO4 Induced by Magnetism

NASA Astrophysics Data System (ADS)

Seifitokaldani, Ali; Gheribi, Aïmen E.; Phan, Anh Thu; Chartrand, Patrice; Dollé, Mickaël

2016-09-01

A new thermodynamically self-consistent (TSC) method, based on the quasi-harmonic approximation (QHA), is used to obtain the Debye temperatures of LiFePO4 (LFP) and FePO4 (FP) from available experimental specific heat capacities for a wide temperature range. The calculated Debye temperatures show an interesting critical and peculiar behavior so that a steep increase in the Debye temperatures is observed by increasing the temperature. This critical behavior is fitted by the critical function and the adjusted critical temperatures are very close to the magnetic phase transition temperatures in LFP and FP. Hence, the critical behavior of the Debye temperatures is correlated with the magnetic phase transitions in these compounds. Our first-principle calculations support our conjecture that the change in electronic structures, i.e. electron density of state and electron localization function, and consequently the change in thermophysical properties due to the magnetic transition may be the reason for the observation of this peculiar behavior of the Debye temperatures.

Important Variation in Vibrational Properties of LiFePO4 and FePO4 Induced by Magnetism.

PubMed

Seifitokaldani, Ali; Gheribi, Aïmen E; Phan, Anh Thu; Chartrand, Patrice; Dollé, Mickaël

2016-09-08

A new thermodynamically self-consistent (TSC) method, based on the quasi-harmonic approximation (QHA), is used to obtain the Debye temperatures of LiFePO4 (LFP) and FePO4 (FP) from available experimental specific heat capacities for a wide temperature range. The calculated Debye temperatures show an interesting critical and peculiar behavior so that a steep increase in the Debye temperatures is observed by increasing the temperature. This critical behavior is fitted by the critical function and the adjusted critical temperatures are very close to the magnetic phase transition temperatures in LFP and FP. Hence, the critical behavior of the Debye temperatures is correlated with the magnetic phase transitions in these compounds. Our first-principle calculations support our conjecture that the change in electronic structures, i.e. electron density of state and electron localization function, and consequently the change in thermophysical properties due to the magnetic transition may be the reason for the observation of this peculiar behavior of the Debye temperatures.

4 Kelvin Cryogenic Characterization of Commercial pHEMT Transistors at 9 kHz to 8.5 GHz Range

NASA Astrophysics Data System (ADS)

Ibarra-Medel, E.; Velázquez, M.; Ventura, S.; Ferrusca, D.; Gómez-Rivera, V.

2016-07-01

Nowadays, the technology innovations in large format array detectors at low temperature for millimetric observational astronomy demand the development of electronics capable to keep their functionality at cryogenic temperatures. In kinetic inductance detectors, the first stage of electronics readout requires high-bandwidth low-noise amplifiers (LNAs). These devices are commonly fabricated in monolithic microwave integrated circuit (MMIC) processes which commercially achieve a noise temperature level of 5 K. An alternative approach to the MMIC are the hybrid microwave circuit which mixes RF lumped elements and discrete electronic components. This paper describes the characterization of six commercial pHEMT transistors tested at cryogenic temperatures. DC properties such as I-V curves and transconductance (g_m) were measured for each transistor; these measurements allow us to calculate the best bias point versus gain, with the lowest noise figure and power consumption within the range of 9 kHz to 8.5 GHz at the operating temperature of 4 K. Experimental results suggest that the characterized pHEMTs have a noise figure that allow them to be used in hybrid LNAs arranges with a comparable MMIC performance.

Theory of Thermal Relaxation of Electrons in Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadasivam, Sridhar; Chan, Maria K. Y.; Darancet, Pierre

2017-09-01

We compute the transient dynamics of phonons in contact with high energy ``hot'' charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 ps to 15 ps after electronic excitation, a phenomenon concomitant with the appearance of non-thermal vibrational modes. We demonstrate that these effects result from the slow thermalization within the phonon subsystem, caused by the large heterogeneity in the timescales of electron-phonon and phonon-phonon interactions in these materials. We propose a generalizedmore » 2-temperature model accounting for the phonon thermalization as a limiting step of electron-phonon thermalization, which captures the full thermal relaxation of hot electrons and holes in semiconductors. A direct consequence of our findings is that, for semiconductors, information about the spectral distribution of electron-phonon and phonon-phonon coupling can be extracted from the multi-exponential behavior of the electronic temperature.« less

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Electronic Ambient-Temperature Recorder

NASA Technical Reports Server (NTRS)

Russell, Larry; Barrows, William

1995-01-01

Electronic temperature-recording unit stores data in internal memory for later readout. Records temperatures from minus 40 degrees to plus 60 degrees C at intervals ranging from 1.875 to 15 minutes. With all four data channels operating at 1.875-minute intervals, recorder stores at least 10 days' data. For only one channel at 15-minute intervals, capacity extends to up to 342 days' data. Developed for recording temperatures of instruments and life-science experiments on satellites, space shuttle, and high-altitude aircraft. Adaptable to such terrestrial uses as recording temperatures of perishable goods during transportation and of other systems or processes over long times. Can be placed directly in environment to monitor.

Improved analysis techniques for cylindrical and spherical double probes.

PubMed

Beal, Brian; Johnson, Lee; Brown, Daniel; Blakely, Joseph; Bromaghim, Daron

2012-07-01

A versatile double Langmuir probe technique has been developed by incorporating analytical fits to Laframboise's numerical results for ion current collection by biased electrodes of various sizes relative to the local electron Debye length. Application of these fits to the double probe circuit has produced a set of coupled equations that express the potential of each electrode relative to the plasma potential as well as the resulting probe current as a function of applied probe voltage. These equations can be readily solved via standard numerical techniques in order to determine electron temperature and plasma density from probe current and voltage measurements. Because this method self-consistently accounts for the effects of sheath expansion, it can be readily applied to plasmas with a wide range of densities and low ion temperature (T(i)/T(e) ≪ 1) without requiring probe dimensions to be asymptotically large or small with respect to the electron Debye length. The presented approach has been successfully applied to experimental measurements obtained in the plume of a low-power Hall thruster, which produced a quasineutral, flowing xenon plasma during operation at 200 W on xenon. The measured plasma densities and electron temperatures were in the range of 1 × 10(12)-1 × 10(17) m(-3) and 0.5-5.0 eV, respectively. The estimated measurement uncertainty is +6%∕-34% in density and +∕-30% in electron temperature.

Study of thermal-field emission properties and investigation of temperature dependent noise in the field emission current from vertical carbon nanotube emitters

NASA Astrophysics Data System (ADS)

Kolekar, Sadhu; Patole, S. P.; Patil, Sumati; Yoo, J. B.; Dharmadhikari, C. V.

2017-10-01

We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well-defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD) in order to understand the effect of temperature on distribution of electron emission spots and ring like structures in Field Emission Microscope (FEM) image. The FEM images could be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 from FEM image is typically, 4.5 × 107 and the actual number emitters per cm2 present as per Atomic Force Microscopy (AFM) data is 1.2 × 1012. The measured Current-Voltage (I-V) characteristics exhibit non linear Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current were recorded at different temperatures and Fast Fourier transformed into temperature dependent power spectral density. The latter was found to obey power law relation S(f) = A(Iδ/fξ), where δ and ξ are temperature dependent current and frequency exponents respectively.

[The Spectral Analysis of Laser-Induced Plasma in Laser Welding with Various Protecting Conditions].

PubMed

Du, Xiao; Yang, Li-jun; Liu, Tong; Jiao, Jiao; Wang, Hui-chao

2016-01-01

The shielding gas plays an important role in the laser welding process and the variation of the protecting conditions has an obvious effect on the welding quality. This paper studied the influence of the change of protecting conditions on the parameters of laser-induced plasma such as electron temperature and electron density during the laser welding process by designing some experiments of reducing the shielding gas flow rate step by step and simulating the adverse conditions possibly occurring in the actual Nd : YAG laser welding process. The laser-induced plasma was detected by a fiber spectrometer to get the spectral data. So the electron temperature of laser-induced plasma was calculated by using the method of relative spectral intensity and the electron density by the Stark Broadening. The results indicated that the variation of protecting conditions had an important effect on the electron temperature and the electron density in the laser welding. When the protecting conditions were changed, the average electron temperature and the average electron density of the laser-induced plasma would change, so did their fluctuation range. When the weld was in a good protecting condition, the electron temperature, the electron density and their fluctuation were all low. Otherwise, the values would be high. These characteristics would have contribution to monitoring the process of laser welding.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Ultra-fast electron capture by electrosterically-stabilized gold nanoparticles.

PubMed

Ghandi, Khashayar; Findlater, Alexander D; Mahimwalla, Zahid; MacNeil, Connor S; Awoonor-Williams, Ernest; Zahariev, Federico; Gordon, Mark S

2015-07-21

Ultra-fast pre-solvated electron capture has been observed for aqueous solutions of room-temperature ionic liquid (RTIL) surface-stabilized gold nanoparticles (AuNPs; ∼9 nm). The extraordinarily large inverse temperature dependent rate constants (k(e)∼ 5 × 10(14) M(-1) s(-1)) measured for the capture of electrons in solution suggest electron capture by the AuNP surface that is on the timescale of, and therefore in competition with, electron solvation and electron-cation recombination reactions. The observed electron transfer rates challenge the conventional notion that radiation induced biological damage would be enhanced in the presence of AuNPs. On the contrary, AuNPs stabilized by non-covalently bonded ligands demonstrate the potential to quench radiation-induced electrons, indicating potential applications in fields ranging from radiation therapy to heterogeneous catalysis.

Transition from disordered to long-range ordered nanoparticles on Al2O3/Ni3Al(111)

NASA Astrophysics Data System (ADS)

Alyabyeva, N.; Ouvrard, A.; Zakaria, A.-M.; Charra, F.; Bourguignon, B.

2018-06-01

Application of preparation recipes of the literature failed to produce an ordered array of NPs on our particular Ni3Al sample. This has motivated a systematic survey of Pd NP nucleation as a function of experimental parameters. We have shown that the increase of oxidation temperature during the preparation of Al2O3 ultra-thin film on Ni3Al(111) leads to a transition from disordered to long-range ordered Pd nanoparticle (NP) nucleation. Alumina films were prepared at different temperatures ranging from 990 to 1140 K. Crystallinity, electronic structure of the alumina film and Pd nucleation and growth have been investigated using Low Energy Electron Diffraction and Scanning Tunnelling Microscopy. NP density and long-range order nucleation along the so-called "dot structure" of 4.2 nm periodicity, strongly increase for temperatures higher than a threshold value of 1070 ± 20 K. This transition relies on the alumina film improvement and suggests that the modulation of Pd adsorption energy at nucleation centres which is necessary to nucleate NPs at ordered sites, requires higher preparation temperature. Long-range ordered NPs with a high density were obtained 140 K above reported recipes in the literature. This optimized temperature has been tested on a fresh sample (issued from the same supplier) for which just a few cleanings were enough to obtain long-range ordered NPs. Presumably the variability of the optimal oxidation temperature for our samples with respect to the literature is related to fluctuations of the stoichiometry from sample to sample.

Calculation of gyrosynchrotron radiation brightness temperature for outer bright loop of ICME

NASA Astrophysics Data System (ADS)

Sun, Weiying; Wu, Ji; Wang, C. B.; Wang, S.

:Solar polar orbit radio telescope (SPORT) is proposed to detect the high density plasma clouds of outer bright loop of ICMEs from solar orbit with large inclination. Of particular interest is following the propagation of the plasma clouds with remote sensor in radio wavelength band. Gyrosynchrotron emission is a main radio radiation mechanism of the plasma clouds and can provide information of interplanetary magnetic field. In this paper, we statistically analyze the electron density, electron temperature and magnetic field of background solar wind in time of quiet sun and ICMEs propagation. We also estimate the fluctuation range of the electron density, electron temperature and magnetic field of outer bright loop of ICMEs. Moreover, we calculate and analyze the emission brightness temperature and degree of polarization on the basis of the study of gyrosynchrotron emission, absorption and polarization characteristics as the optical depth is less than or equal to 1.

WE-E-18A-06: To Remove Or Not to Remove: Comfort Pads From Beneath Neonates for Radiography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, X; Baad, M; Reiser, I

2014-06-15

Purpose: To obtain an analytical empirical formula for the photon dose source term in forward direction from bremsstrahlung generated from laser-plasma accelerated electron beams in aluminum solid targets, with electron-plasma temperatures in the 10–100 keV energy range, and to calculate transmission factors for iron, aluminum, methacrylate, lead and concrete and air, materials most commonly found in vacuum chamber labs. Methods: Bremsstrahlung fluence is calculated from the convolution of thin-target bremsstrahlung spectrum for monoenergetic electrons and the relativistic Maxwell-Juettner energy distribution for the electron-plasma. Unattenuatted dose in tissue is calculated by integrating the photon spectrum with the mass-energy absorption coefficient. Formore » the attenuated dose, energy dependent absorption coefficient, build-up factors and finite shielding correction factors were also taken into account. For the source term we use a modified formula from Hayashi et al., and we fitted the proportionality constant from experiments with the aid of the previously calculated transmission factors. Results: The forward dose has a quadratic dependence on electron-plasma temperature: 1 joule of effective laser energy transferred to the electrons at 1 m in vacuum yields 0,72 Sv per MeV squared of electron-plasma temperature. Air strongly filters the softer part of the photon spectrum and reduce the dose to one tenth in the first centimeter. Exponential higher energy tail of maxwellian spectrum contributes mainly to the transmitted dose. Conclusion: A simple formula for forward photon dose from keV range temperature plasma is obtained, similar to those found in kilovoltage x-rays but with higher dose per dissipated electron energy, due to thin target and absence of filtration.« less

VizieR Online Data Catalog: Radiative recombination electron energy loss data (Mao+, 2017)

NASA Astrophysics Data System (ADS)

Mao, J.; Kaastra, J.; Badnell, N. R.

2016-11-01

The weighted electron energy loss factors (dimensionless) are defined by weighting the electron energy loss rate coefficients (per ion) with respect to the total radiative recombination rates. Both the unparameterized and parameterized weighted electron energy-loss factors for H-like to Ne-like ions from H (z=1) up to and including Zn (z=30), in a wide temperature range, are available here. For the unparameterized data set, the temperatures are set to the conventional ADAS temperature grid, i.e. c2*(10,20,50,100,200,...,2*106,5*106,107)K, where c is the ionic charge of the recombined ion. For the fitting parameters, the temperature should be in units of eV. We refer to the recombined ion when we speak of the radiative recombination of a certain ion, for example, for a bare oxygen ion capturing a free electron via radiative recombination to form H-like oxygen (O VIII, s=1, z=8). The fitting accuracies are better than 4%. (2 data files).

Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

NASA Astrophysics Data System (ADS)

Wiemann, Yvonne; Simmendinger, Julian; Clauss, Conrad; Bogani, Lapo; Bothner, Daniel; Koelle, Dieter; Kleiner, Reinhold; Dressel, Martin; Scheffler, Marc

2015-05-01

We describe a fully broadband approach for electron spin resonance (ESR) experiments, where it is possible to tune not only the magnetic field but also the frequency continuously over wide ranges. Here, a metallic coplanar transmission line acts as compact and versatile microwave probe that can easily be implemented in different cryogenic setups. We perform ESR measurements at frequencies between 0.1 and 67 GHz and at temperatures between 50 mK and room temperature. Three different types of samples (Cr3+ ions in ruby, organic radicals of the nitronyl-nitroxide family, and the doped semiconductor Si:P) represent different possible fields of application for the technique. We demonstrate that an extremely large phase space in temperature, magnetic field, and frequency for ESR measurements, substantially exceeding the range of conventional ESR setups, is accessible with metallic coplanar lines.

Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

NASA Technical Reports Server (NTRS)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

Using the Ab Initio Molecular Dynamics Method for Simulating the Peculiarities in the Temperature Dependence of Liquid Bismuth Properties

NASA Astrophysics Data System (ADS)

Yuryev, A. A.; Gelchinski, B. R.; Vatolin, N. A.

2018-03-01

The specific features pertinent to the temperature dependence of the electronic and atomic properties of liquid bismuth that have been observed in experiments are investigated according to the ab initio molecular dynamics method using the SIESTA open software package. The density of electronic states, the radial distribution function of atoms, and the self-diffusion coefficient are calculated for the temperature range from the melting point equal to 545 K to 1500 K. The calculated data are in good agreement with the experimental data. It is found that the position of the first peak in the radial distribution function of atoms and the self-diffusion coefficient are characterized by a nonmonotonic dependence under the conditions of superheating by approximately 150 K above the melting temperature. In the authors' opinion, this dependence feature is attributed to a change in the liquid short-range order structure.

Laser-Matter Interaction in Dielectrics: Insight from Picosecond-Pulsed Second-Harmonic Generation in Periodically Poled LiTaO3

NASA Astrophysics Data System (ADS)

Louchev, Oleg A.; Wada, Satoshi; Panchenko, Vladislav Ya.

2017-08-01

We develop a modified two-temperature (2T) model of laser-matter interaction in dielectrics based on experimental insight from picosecond-pulsed high-frequency temperature-controlled second-harmonic (515 nm) generation in periodically poled stoichiometric LiTaO3 crystal and required for computational treatment of short-pulsed nonlinear optics and materials processing applications. We show that the incorporation of an extended set of recombination-kinetics-related energy-release and heat-exchange processes following short-pulsed photoionization by two-photon absorption of the second harmonic allows accurate simulation of the electron-lattice relaxation dynamics and electron-lattice temperature evolution in LiTaO3 crystal in nonlinear laser-frequency conversion. Our experimentally confirmed model and detailed simulation study show that two-photon ionization with the recombination mechanism via ion-electron-lattice interaction followed by a direct transfer of the recombination energy to the lattice is the main laser-matter energy-transfer pathway responsible for the majority of the crystal lattice heating (approximately 90%) continuing for approximately 50 ps after laser-pulse termination and competing with effect of electron-phonon energy transfer from the free electrons. This time delay is due to a recombination bottleneck which hinders faster relaxation to thermal equilibrium in photoionized dielectric crystal. Generally, our study suggests that in dielectrics photoionized by short-pulsed radiation with intensity range used in nonlinear laser-frequency conversion, the electron-lattice relaxation period is defined by the recombination-stage bottleneck of a few tens of picoseconds and not by the time of the electron-phonon energy transfer. This modification of the 2T model can be applied to a broad range of processes involving laser-matter interactions in dielectrics and semiconductors for charge density reaching the range of 1021- 1022 cm-3 .

Beta-manganese dioxide nanorods for sufficient high-temperature electromagnetic interference shielding in X-band

NASA Astrophysics Data System (ADS)

Song, Wei-Li; Cao, Mao-Sheng; Hou, Zhi-Ling; Lu, Ming-Ming; Wang, Chan-Yuan; Yuan, Jie; Fan, Li-Zhen

2014-09-01

As the development of electronic and communication technology, electromagnetic interference (EMI) shielding and attenuation is an effective strategy to ensure the operation of the electronic devices. Among the materials for high-performance shielding in aerospace industry and related high-temperature working environment, the thermally stable metal oxide semiconductors with narrow band gap are promising candidates. In this work, beta-manganese dioxide ( β-MnO2) nanorods were synthesized by a hydrothermal method. The bulk materials of the β-MnO2 were fabricated to evaluate the EMI shielding performance in the temperature range of 20-500 °C between 8.2 and 12.4 GHz (X-band). To understand the mechanisms of high-temperature EMI shielding, the contribution of reflection and absorption to EMI shielding was discussed based on temperature-dependent electrical properties and complex permittivity. Highly sufficient shielding effectiveness greater than 20 dB was observed over all the investigated range, suggesting β-MnO2 nanorods as promising candidates for high-temperature EMI shielding. The results have also established a platform to develop high-temperature EMI shielding materials based on nanoscale semiconductors.

Spectroscopic fingerprints for charge localization in the organic semiconductor (DOEO)4[HgBr4]·TCE

NASA Astrophysics Data System (ADS)

Koplak, Oksana V.; Chernenkaya, Alisa; Medjanik, Katerina; Brambilla, Alberto; Gloskovskii, Andrei; Calloni, Alberto; Elmers, Hans-Joachim; Schönhense, Gerd; Ciccacci, Franco; Morgunov, Roman B.

2015-05-01

Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the organic semiconductor (DOEO)4[HgBr4]·TCE. Localization starts in the temperature region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of inclusions (droplets), and individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the temperature- and angular dependence of electron spin resonance (ESR) spectra revealed fingerprints of antiferromagnetic contributions as well as paramagnetic resonance spectra of individual localized charge carriers. The results point on coexistence of antiferromagnetic long and short range order as evident from a second ESR line. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperatures around 60 K and 150 K. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using complementary methods at the same sample reveals the close relation of changes in the transport properties and in the energy distribution of electronic states.

Alternative Fuels Data Center: How Do Hybrid Electric Cars Work?

Science.gov Websites

, and the air/fuel mix is ignited by the spark from a spark plug. Power electronics controller: This maintains a proper operating temperature range of the engine, electric motor, power electronics, and other

Alternative Fuels Data Center: How Do Fuel Cell Electric Vehicles Work

Science.gov Websites

hydrogen gas on board the vehicle until it's needed by the fuel cell. Power electronics controller: This maintains a proper operating temperature range of the engine, electric motor, power electronics, and other

Particle-in-cell and global simulations of α to γ transition in atmospheric pressure Penning-dominated capacitive discharges

NASA Astrophysics Data System (ADS)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J.; Chabert, P.; Lazzaroni, C.

2014-06-01

Atmospheric pressure radio-frequency (rf) capacitive micro-discharges are of interest due to emerging applications, especially in the bio-medical field. A previous global model did not consider high-power phenomena such as sheath multiplication, thus limiting its applicability to the lower power range. To overcome this, we use one-dimensional particle-in-cell (PIC) simulations of atmospheric He/0.1% N2 capacitive discharges over a wide range of currents and frequencies to guide the development of a more general global model which is also valid at higher powers. The new model includes sheath multiplication and two classes of electrons: the higher temperature ‘hot’ electrons associated with the sheaths, and the cooler ‘warm’ electrons associated with the bulk. The electric field and the electron power balance are solved analytically to determine the time-varying hot and warm temperatures and the effective rate coefficients. The particle balance equations are integrated numerically to determine the species densities. The model and PIC results are compared, showing reasonable agreement over the range of currents and frequencies studied. They indicate a transition from an α mode at low power characterized by relatively high electron temperature Te with a near uniform profile to a γ mode at high power with a Te profile strongly depressed in the bulk plasma. The transition is accompanied by an increase in density and a decrease in sheath widths. The current and frequency scalings of the model are confirmed by the PIC simulations.

Intramolecular electron-transfer rates in mixed-valence triarylamines: measurement by variable-temperature ESR spectroscopy and comparison with optical data.

PubMed

Lancaster, Kelly; Odom, Susan A; Jones, Simon C; Thayumanavan, S; Marder, Seth R; Brédas, Jean-Luc; Coropceanu, Veaceslav; Barlow, Stephen

2009-02-11

The electron spin resonance spectra of the radical cations of 4,4'-bis[di(4-methoxyphenyl)amino]tolane, E-4,4'-bis[di(4-methoxyphenyl)amino]stilbene, and E,E-1,4-bis{4-[di(4-methoxyphenyl)amino]styryl}benzene in dichloromethane exhibit five lines over a wide temperature range due to equivalent coupling to two 14N nuclei, indicating either delocalization between both nitrogen atoms or rapid intramolecular electron transfer on the electron spin resonance time scale. In contrast, those of the radical cations of 1,4-bis{4-[di(4-methoxyphenyl)amino]phenylethynyl}benzene and E,E-1,4-bis{4-[di(4-n-butoxyphenyl)amino]styryl}-2,5-dicyanobenzene exhibit line shapes that vary strongly with temperature, displaying five lines at room temperature and only three lines at ca. 190 K, indicative of slow electron transfer on the electron spin resonance time scale at low temperatures. The rates of intramolecular electron transfer in the latter compounds were obtained by simulation of the electron spin resonance spectra and display an Arrhenius temperature dependence. The activation barriers obtained from Arrhenius plots are significantly less than anticipated from Hush analyses of the intervalence bands when the diabatic electron-transfer distance, R, is equated to the N[symbol: see text]N distance. Comparison of optical and electron spin resonance data suggests that R is in fact only ca. 40% of the N[symbol: see text]N distance, while the Arrhenius prefactor indicates that the electron transfer falls in the adiabatic regime.

Properties of AGN coronae in the NuSTAR era - II. Hybrid plasma

NASA Astrophysics Data System (ADS)

Fabian, A. C.; Lohfink, A.; Belmont, R.; Malzac, J.; Coppi, P.

2017-05-01

The corona, a hot cloud of electrons close to the centre of the accretion disc, produces the hard X-ray power-law continuum commonly seen in luminous active galactic nuclei. The continuum has a high-energy turnover, typically in the range of one to several 100 keV and is suggestive of Comptonization by thermal electrons. We are studying hard X-ray spectra of AGN obtained with NuSTAR after correction for X-ray reflection and under the assumption that coronae are compact, being only a few gravitational radii in size as indicated by reflection and reverberation modelling. Compact coronae raise the possibility that the temperature is limited and indeed controlled by electron-positron pair production, as explored earlier (Paper I). Here, we examine hybrid plasmas in which a mixture of thermal and non-thermal particles is present. Pair production from the non-thermal component reduces the temperature leading to a wider temperature range more consistent with observations.

Radiation-Hardened Electronics for the Space Environment

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Watson, Michael D.

2007-01-01

RHESE covers a broad range of technology areas and products. - Radiation Hardened Electronics - High Performance Processing - Reconfigurable Computing - Radiation Environmental Effects Modeling - Low Temperature Radiation Hardened Electronics. RHESE has aligned with currently defined customer needs. RHESE is leveraging/advancing SOA space electronics, not duplicating. - Awareness of radiation-related activities through out government and industry allow advancement rather than duplication of capabilities.

Surface mass diffusion over an extended temperature range on Pt(111)

NASA Astrophysics Data System (ADS)

Rajappan, M.; Swiech, W.; Ondrejcek, M.; Flynn, C. P.

2007-06-01

Surface mass diffusion is investigated on Pt(111) at temperatures in the range 710-1220 K. This greatly extends the range over which diffusion is known from step fluctuation spectroscopy (SFS). In the present research, a beam of Pt- self-ions is employed to create a suitable structure on step edges. The surface mass diffusion coefficients then follow from the decay of Fourier components observed by low-energy electron microscopy (LEEM) at selected annealing temperatures. The results agree with SFS values where they overlap, and continue smoothly to low temperature. This makes it unlikely that diffusion along step edges plays a major role in step edge relaxation through the temperature range studied. The surface mass diffusion coefficient for the range 710-1520 K deduced from the present work, together with previous SFS data, is Ds = 4 × 10-3 exp(-1.47 eV/kBT) cm2 s-1.

Dynamical Cooper pairing in nonequilibrium electron-phonon systems

DOE PAGES

Knap, Michael; Babadi, Mehrtash; Refael, Gil; ...

2016-12-08

In this paper, we analyze Cooper pairing instabilities in strongly driven electron-phonon systems. The light-induced nonequilibrium state of phonons results in a simultaneous increase of the superconducting coupling constant and the electron scattering. We demonstrate that the competition between these effects leads to an enhanced superconducting transition temperature in a broad range of parameters. Finally, our results may explain the observed transient enhancement of superconductivity in several classes of materials upon irradiation with high intensity pulses of terahertz light, and may pave new ways for engineering high-temperature light-induced superconducting states.

Role of electron concentration in softening and hardening of ternary molybdenum alloys

NASA Technical Reports Server (NTRS)

Stephens, J. R.; Witzke, W. R.

1975-01-01

Effects of various combinations of hafnium, tantalum, rhenium, osmium, iridium, and platinum in ternary molybdenum alloys on alloy softening and hardening were determined. Hardness tests were conducted at four test temperatures over the temperature range 77 to 411 K. Results showed that hardness data for ternary molybdenum alloys could be correlated with anticipated results from binary data based upon expressions involving the number of s and d electrons contributed by the solute elements. The correlation indicated that electron concentration plays a dominant role in controlling the hardness of ternary molybdenum alloys.

A cryogenic multichannel electronically scanned pressure module

NASA Technical Reports Server (NTRS)

Shams, Qamar A.; Fox, Robert L.; Adcock, Edward E.; Kahng, Seun K.

1992-01-01

Consideration is given to a cryogenic multichannel electronically scanned pressure (ESP) module developed and tested over an extended temperature span from -184 to +50 C and a pressure range of 0 to 5 psig. The ESP module consists of 32 pressure sensor dice, four analog 8 differential-input multiplexers, and an amplifier circuit, all of which are packaged in a physical volume of 2 x 1 x 5/8 in with 32 pressure and two reference ports. Maximum nonrepeatability is measured at 0.21 percent of full-scale output. The ESP modules have performed consistently well over 15 times over the above temperature range and continue to work without any sign of degradation. These sensors are also immune to repeated thermal shock tests over a temperature change of 220 C/sec.

Laboratory study of the spectrum of highly ionized calcium in the 100-250 A range applied to solar flare diagnostics

NASA Technical Reports Server (NTRS)

Lippmann, S.; Finkenthal, M.; Huang, L. K.; Moos, H. W.; Stratton, B. C.; Yu, T. L.; Bhatia, A. K.

1987-01-01

Calcium was introduced into the TEXT tokamak, and its spectral emission was recorded in the 50-360 A range by an absolutely calibrated grazing incidence spectrometer. These observations of highly ionized species of calcium at known conditions of plasma electron temperature and density allow testing of line brightness ratio predictions based on theoretical values of temperature-dependent electron excitation rates. The confirmation of the expected ratios in Be I-like to O I-like calcium allows more confident use of these ratios as a density diagnostic of remote astrophysical sources such as solar flares.

Plasma parameter diagnosis using hydrogen emission spectra of a quartz-chamber 2.45 GHz ECRIS at Peking University

NASA Astrophysics Data System (ADS)

Wu, WenBin; Ren, HaiTao; Peng, ShiXiang; Xu, Yuan; Wen, JiaMei; Zhang, Tao; Zhang, JingFeng; Zhang, AiLin; Sun, Jiang; Guo, ZhiYu; Chen, JiaEr

2018-04-01

A quartz-chamber 2.45 GHz electron cyclotron resonance ion source (ECRIS) was designed for diagnostic purposes at Peking University [Patent Number: ZL 201110026605.4]. This ion source can produce a maximum 84 mA hydrogen ion beam at 50 kV with a duty factor of 10%. The root-mean-square (RMS) emittance of this beam is less than 0.12π mm mrad. In our initial work, the electron temperature and electron density inside the plasma chamber had been measured with the line intensity ratio of noble gases. Based on these results, the atomic and molecular emission spectra of hydrogen were applied to determine the dissociation degree of hydrogen and the vibrational temperature of hydrogen molecules in the ground state, respectively. Measurements were performed at gas pressures from 4×10-4 to 1×10-3 Pa and at input peak RF power ranging from 1000 to 1800 W. The dissociation degree of hydrogen in the range of 0.5%-10% and the vibrational temperature of hydrogen molecules in the ground state in the range of 3500-8500 K were obtained. The plasma processes inside this ECRIS chamber were discussed based on these results.

Reprint of : Hanbury-Brown Twiss noise correlation with time controlled quasi-particles in ballistic quantum conductors

NASA Astrophysics Data System (ADS)

Glattli, D. C.; Roulleau, P.

2016-08-01

We study the Hanbury Brown and Twiss correlation of electronic quasi-particles injected in a quantum conductor using current noise correlations and we experimentally address the effect of finite temperature. By controlling the relative time of injection of two streams of electrons it is possible to probe the fermionic antibunching, performing the electron analog of the optical Hong Ou Mandel (HOM) experiment. The electrons are injected using voltage pulses with either sine-wave or Lorentzian shape. In the latter case, we propose a set of orthogonal wavefunctions, describing periodic trains of multiply charged electron pulses, which give a simple interpretation to the HOM shot noise. The effect of temperature is then discussed and experimentally investigated. We observe a perfect electron anti-bunching for a large range of temperature, showing that, as recently predicted, thermal mixing of the states does not affect anti-bunching properties, a feature qualitatively different from dephasing. For single charge Lorentzian pulses, we provide experimental evidence of the prediction that the HOM shot noise variation versus the emission time delay is remarkably independent of the temperature.

Investigation of high temperature fracture of T-111 and ASTAR-811C

NASA Technical Reports Server (NTRS)

Gold, R. E.

1971-01-01

The high temperature deformation and fracture behavior of T-111 and ASTAR-811C were studied over the temperature range 982 to 2205 C (1800 to 4000 F). As-cast and wrought-recrystallized material as well as GTA welds in sheet and plate were evaluated using conventional tensile and creep tests. Post test examinations were performed using optical metallography, scanning electron microscopy and transmission electron microscopy. A high temperature region of reduced ductility, in terms of tensile elongation, was identified for both alloys. The reduction in tensile elongation became more severe with increase in grain size, being near catastrophic for the as-cast specimens. Optical and electron metallography indicated that even for failures at very low total strain, considerable deformation of a very localized nature had occurred prior to fracture.

The excitation of the O(1S) state by the dissociative recombination of O2(+) ions - Electron temperature dependence

NASA Technical Reports Server (NTRS)

Zipf, Edward C.

1988-01-01

The rate coefficient for the excitation of the O(1S) state due to the dissociative recombination of O2(+) (v of not greater than 3) ions has been determined as a function of the electron temperature from 300-3500 K. In agreement with the work of Guberman (1987), the results suggest that the absolute magnitude of alpha(1S) is nearly the same for a wide variety of O2(+) vibrational distributions over the electron temperature range normally encountered in the nocturnal F-region. It is noted that previous studies which modeled 5577-A airglow data using a fixed value for f(1S) may be misleading.

Effect of parallel electric fields on the ponderomotive stabilization of MHD instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin, C.; Hershkowitz, N.

The contribution of the wave electric field component E/sub parallel/, parallel to the magnetic field, to the ponderomotive stabilization of curvature driven instabilities is evaluated and compared to the transverse component contribution. For the experimental density range, in which the stability is primarily determined by the m = 1 magnetosonic wave, this contribution is found to be the dominant and stabilizing when the electron temperature is neglected. For sufficiently high electron temperatures the dominant fast wave is found to be axially evanescent. In the same limit, E/sub parallel/ becomes radially oscillating. It is concluded that the increased electron temperature nearmore » the plasma surface reduces the magnitude of ponderomotive effects.« less

Role of temperature on static correlational properties in a spin-polarized electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arora, Priya; Moudgil, R. K., E-mail: rkmoudgil@kuk.ac.in; Kumar, Krishan

We have studied the effect of temperature on the static correlational properties of a spin-polarized three-dimensional electron gas (3DEG) over a wide coupling and temperature regime. This problem has been very recently studied by Brown et al. using the restricted path-integral Monte Carlo (RPIMC) technique in the warm-dense regime. To this endeavor, we have used the finite temperature version of the dynamical mean-field theory of Singwi et al, the so-called quantum STLS (qSTLS) approach. The static density structure factor and the static pair-correlation function are calculated, and compared with the RPIMC simulation data. We find an excellent agreement with themore » simulation at high temperature over a wide coupling range. However, the agreement is seen to somewhat deteriorate with decreasing temperature. The pair-correlation function is found to become small negative for small electron separation. This may be attributed to the inadequacy of the mean-field theory in dealing with the like spin electron correlations in the strong-coupling domain. A nice agreement with RPIMC data at high temperature seems to arise due to weakening of both the exchange and coulomb correlations with rising temperature.« less

Inelastic effects of Josephson junctions

NASA Astrophysics Data System (ADS)

Ranjan, Samir

We have investigated the effects of the inelastic interaction of electrons with phonons in the barrier region of S-I-S and S-N-S Josephson junctions. We find that under suitable conditions this mechanism can cause substantial modifications of the temperature dependence of the critical current jsb{c} as the inevitable loss of coherence can be more than compensated by the enhancement of the tunneling probability resulting from the phonon absorption. The effect depends strongly on the ratio qsb{TF}a of the junction width a to the screening length in the barrier region. For a S-I-S junction, a monotonic decrease in the critical current with temperature is found for qsb{TF}a ≫ 1 whereas for qsb{TF}a ≪ 1, the appearance of a peak in jsb{c}(T) near Tsb{c} is predicted. This new interesting effect is the consequence of the competition between the decrease of the superconducting gap function and the increase in the number of phonons with temperature. A wide range of parameter values has been explored and contact with relevant experimental results has been made. For an S-N-S junction, there is a large increase in the coherence length in the non-superconducting region leading to a substantial enhancement of the critical current over a wide range of temperature. It turns out that the entire temperature range can be divided broadly into two regimes. At low temperatures, the electron predominantly exchanges energy with just one phonon and it is this process that mainly determines the critical current. At higher temperatures the critical current is determined by processes in which the electrons exchange energy with many phonons during their under barrier motion.

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

NASA Astrophysics Data System (ADS)

Liu, Po-Tsun; Tsai, T. M.; Chang, T. C.

2005-05-01

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

Controlled cooling of an electronic system for reduced energy consumption

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Milnes P.; Iyengar, Madhusudan K.; Schmidt, Roger R.

Energy efficient control of a cooling system cooling an electronic system is provided. The control includes automatically determining at least one adjusted control setting for at least one adjustable cooling component of a cooling system cooling the electronic system. The automatically determining is based, at least in part, on power being consumed by the cooling system and temperature of a heat sink to which heat extracted by the cooling system is rejected. The automatically determining operates to reduce power consumption of the cooling system and/or the electronic system while ensuring that at least one targeted temperature associated with the coolingmore » system or the electronic system is within a desired range. The automatically determining may be based, at least in part, on one or more experimentally obtained models relating the targeted temperature and power consumption of the one or more adjustable cooling components of the cooling system.« less

Controlled cooling of an electronic system based on projected conditions

DOEpatents

David, Milnes P.; Iyengar, Madhusudan K.; Schmidt, Roger R.

2016-05-17

Energy efficient control of a cooling system cooling an electronic system is provided based, in part, on projected conditions. The control includes automatically determining an adjusted control setting(s) for an adjustable cooling component(s) of the cooling system. The automatically determining is based, at least in part, on projected power consumed by the electronic system at a future time and projected temperature at the future time of a heat sink to which heat extracted is rejected. The automatically determining operates to reduce power consumption of the cooling system and/or the electronic system while ensuring that at least one targeted temperature associated with the cooling system or the electronic system is within a desired range. The automatically determining may be based, at least in part, on an experimentally obtained model(s) relating the targeted temperature and power consumption of the adjustable cooling component(s) of the cooling system.

Controlled cooling of an electronic system based on projected conditions

DOEpatents

David, Milnes P.; Iyengar, Madhusudan K.; Schmidt, Roger R.

2015-08-18

Energy efficient control of a cooling system cooling an electronic system is provided based, in part, on projected conditions. The control includes automatically determining an adjusted control setting(s) for an adjustable cooling component(s) of the cooling system. The automatically determining is based, at least in part, on projected power consumed by the electronic system at a future time and projected temperature at the future time of a heat sink to which heat extracted is rejected. The automatically determining operates to reduce power consumption of the cooling system and/or the electronic system while ensuring that at least one targeted temperature associated with the cooling system or the electronic system is within a desired range. The automatically determining may be based, at least in part, on an experimentally obtained model(s) relating the targeted temperature and power consumption of the adjustable cooling component(s) of the cooling system.

Electron heating at interplanetary shocks

NASA Technical Reports Server (NTRS)

Feldman, W. C.; Asbridge, J. R.; Bame, S. J.; Gosling, J. T.; Zwickl, R. D.

1982-01-01

Data for 41 forward interplanetary shocks show that the ratio of downstream to upstream electron temperatures, T/sub e/(d/u) is variable in the range between 1.0 (isothermal) and 3.0. On average, (T/sub e/(d/u) = 1.5 with a standard deviation, sigma e = 0.5. This ratio is less than the average ratio of proton temperatures across the same shocks, (T/sub p/(d/u)) = 3.3 with sigma p = 2.5 as well as the average ratio of electron temperatures across the Earth's bow shock. Individual samples of T/sub e/(d/u) and T/sub p/(d/u) appear to be weakly correlated with the number density ratio. However the amounts of electron and proton heating are well correlated with each other as well as with the bulk velocity difference across each shock. The stronger shocks appear to heat the protons relatively more efficiently than they heat the electrons.

Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms.

PubMed

Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

2016-06-21

Single-layer and mono-component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large-scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230-300 °C and 400-600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X-ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n-type doping behavior, whereas the PG showed a weak n-type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1-340 cm(2) V(-1)·s(-1) and 59.3-160.6 cm(2) V(-1)·s(-1), respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron-hole transport characteristic, indicating that the long-range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping.

Multifunctional Logic Gate Controlled by Temperature

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit has been designed to function as a NAND gate at a temperature between 0 and 80 deg C and as a NOR gate at temperatures from 120 to 200 C. In the intermediate temperature range of 80 to 120 C, this circuit is expected to perform a function intermediate between NAND and NOR with degraded noise margin. The process of designing the circuit and the planned fabrication and testing of the circuit are parts of demonstration of polymorphic electronics a technological discipline that emphasizes designing the same circuit to perform different analog and/or digital functions under different conditions. In this case, the different conditions are different temperatures.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Resistivity of a simple metal from room temperature to 10 to the 6th K

NASA Astrophysics Data System (ADS)

Milchberg, H. M.; Freeman, R. R.; Davey, S. C.; More, R. M.

1988-11-01

The resistivity of nearly solid-density Al was measured as a function of temperature over 4 orders of magnitude above ambient by observing the self-reflection of an intense, less than 0.5 psec, 308-nm light pulse incident on a planar Al target. As an increasing function of electron temperature, the resistivity is observed initially to increase, reach a maximum which is relatively constant over an extended temperature range, and then decrease at the highest temperatures. The broad maximum is interpreted as resistivity saturation, a condition in which the mean free path of the conduction electrons reaches a minimum value as a function of temperature, regardless of the extent of any further disorder in the material.

Cryogenic Multichannel Pressure Sensor With Electronic Scanning

NASA Technical Reports Server (NTRS)

Hopson, Purnell, Jr.; Chapman, John J.; Kruse, Nancy M. H.

1994-01-01

Array of pressure sensors operates reliably and repeatably over wide temperature range, extending from normal boiling point of water down to boiling point of nitrogen. Sensors accurate and repeat to within 0.1 percent. Operate for 12 months without need for recalibration. Array scanned electronically, sensor readings multiplexed and sent to desktop computer for processing and storage. Used to measure distributions of pressure in research on boundary layers at high Reynolds numbers, achieved by low temperatures.

Measurements of hot-electron temperature in laser-irradiated plasmas

DOE PAGES

Solodov, A. A.; Yaakobi, B.; Edgell, D. H.; ...

2016-10-26

In a recently published work 1–3 we reported on measuring the total energy of hot electrons produced by the interaction of a nanosecond laser with planar CH-coated molybdenum targets, using the Mo K α emission. The temperature of the hot electrons in that work was determined by the high-energy bremsstrahlung [hard x-ray (HXR)] spectrum measured by a three-channel fluorescence-photomultiplier detector (HXRD). In the present work, we replaced the HXRD with a nine-channel image-plate (IP)–based detector (HXIP). For the same conditions (irradiance of the order of 10 14 W/cm 2; 2-ns pulses) the measured temperatures are consistently lower than those measuredmore » by the HXRD (by a factor ~1.5 to 1.7). In addition, we supplemented this measurement with three experiments that measure the hot-electron temperature using K α line-intensity ratios from high-Z target layers, independent of the HXR emission. These experiments yielded temperatures that were consistent with those measured by the HXIP. We showed that the thermal x-ray radiation must be included in the derivation of total energy in hot electrons (E hot), and that this makes E hot only weakly dependent on hot-electron temperature. For a given x-ray emission in inertial confinement fusion compression experiments, this result would lead to a higher total energy in hot electrons, but the preheat of the compressed fuel may be lower because of the reduced hot-electron range.« less

Measurements of hot-electron temperature in laser-irradiated plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solodov, A. A.; Yaakobi, B.; Edgell, D. H.

In a recently published work 1–3 we reported on measuring the total energy of hot electrons produced by the interaction of a nanosecond laser with planar CH-coated molybdenum targets, using the Mo K α emission. The temperature of the hot electrons in that work was determined by the high-energy bremsstrahlung [hard x-ray (HXR)] spectrum measured by a three-channel fluorescence-photomultiplier detector (HXRD). In the present work, we replaced the HXRD with a nine-channel image-plate (IP)–based detector (HXIP). For the same conditions (irradiance of the order of 10 14 W/cm 2; 2-ns pulses) the measured temperatures are consistently lower than those measuredmore » by the HXRD (by a factor ~1.5 to 1.7). In addition, we supplemented this measurement with three experiments that measure the hot-electron temperature using K α line-intensity ratios from high-Z target layers, independent of the HXR emission. These experiments yielded temperatures that were consistent with those measured by the HXIP. We showed that the thermal x-ray radiation must be included in the derivation of total energy in hot electrons (E hot), and that this makes E hot only weakly dependent on hot-electron temperature. For a given x-ray emission in inertial confinement fusion compression experiments, this result would lead to a higher total energy in hot electrons, but the preheat of the compressed fuel may be lower because of the reduced hot-electron range.« less

Dielectric relaxation and electronic structure of double perovskite Sr{sub 2}FeSbO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dutta, Alo; Sinha, T. P.; Shannigrahi, Santiranjan

2008-09-15

The dielectric property and the electronic structure of a double perovskite, Sr{sub 2}FeSbO{sub 6} (SFS) synthesized by solid state reaction technique are investigated. The x-ray diffraction of the sample taken at room temperature shows cubic phase. The scanning electron micrograph of the sample also confirms the formation of the single phase of the material. We have measured the capacitance and conductance of SFS in a frequency range from 50 Hz to 1 MHz and in a temperature range from 163 to 463 K. A relaxation is observed in the entire temperature range as a gradual decrease in {epsilon}{sup '}({omega}) andmore » as a broad peak in {epsilon}{sup ''}({omega}). The frequency dependent electrical data are analyzed in the framework of conductivity and electric modulus formalisms. The frequencies corresponding to the maxima of the imaginary electric modulus at various temperatures are found to obey an Arrhenius law with an activation energy of 0.74 eV. The Cole-Cole model is used to study the dielectric relaxation of SFS. The scaling behavior of imaginary part of electric modulus suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependent conductivity spectra follow the universal power law. The electronic structure of the SFS is studied by x-ray photoemission spectroscopy (XPS). Its valence band consists mainly of the oxygen 2p-states hybridized with the Fe 3d-states. The XPS spectra are investigated by the first principles full potential linearized augmented plane wave method. The angular momentum projected total and partial density of states obtained from first principles calculation are used to analyze the XPS results of the sample. The calculated electronic structures of SFS are qualitatively similar to those of the XPS spectra in terms of spectral features, energy positions, and relative intensities. The electronic structure calculation reveals that the electrical properties of SFS are dominated by the interaction between transition-metal and oxygen ions.« less

Study of photon emission by electron capture during solar nuclei acceleration. 2: Delimitation of conditions for charge transfert establishment

NASA Technical Reports Server (NTRS)

Perez-Peraza, J.; Alvarez, M.; Gallegos, A.

1985-01-01

The conditions for establishment of charge transfer during acceleration of nuclei up to Fe, for typical conditions of solar flare regions T = 5 x 10 to the 3rd power to 2.5 x 10 to the 8th power degrees K were explored. Results show that such conditions are widely assorted, depending on the acceleration mechanism, the kind of projections and their velocity, the target elements, the source temperature and consequently on the degree of ionization of matter and the local charge state of the accelerated ions. Nevertheless, in spite of that assorted behavior, there are some general tendencies that can be summarized as follows. In atomic H electron capture is systematically established from thermal energies up to high energies, whatever the element and for both acceleration process. For a given element and fixed temperature (T), the probability and energy domain of electron capture and loss with Fermi are higher than with Betatron acceleration. For a given acceleration process the heavier the ion the higher the probability and the wider the energy range for electron capture and loss. For given acceleration mechanism and fixed element the importance and energy domain of capture and loss increase with T: for those reasons, the energy range of charge equilibrium (illustrated with solid lines on the next figs.) is wider with Fermi and increases with temperature and atomic number of projectiles. For the same reasons, electron loss is smaller while the lighter the element, the lower the temperature and the Betatron process, such that there are conditions for which electron loss is not allowed at low energies, but only electron capture is established.

Soft x-ray continuum radiation transmitted through metallic filters: an analytical approach to fast electron temperature measurements.

PubMed

Delgado-Aparicio, L; Tritz, K; Kramer, T; Stutman, D; Finkenthal, M; Hill, K; Bitter, M

2010-10-01

A new set of analytic formulas describes the transmission of soft x-ray continuum radiation through a metallic foil for its application to fast electron temperature measurements in fusion plasmas. This novel approach shows good agreement with numerical calculations over a wide range of plasma temperatures in contrast with the solutions obtained when using a transmission approximated by a single-Heaviside function [S. von Goeler et al., Rev. Sci. Instrum. 70, 599 (1999)]. The new analytic formulas can improve the interpretation of the experimental results and thus contribute in obtaining fast temperature measurements in between intermittent Thomson scattering data.

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Influence of chemical ordering on the thermal conductivity and electronic relaxation in FePt thin films in heat assisted magnetic recording applications

DOE PAGES

Giri, Ashutosh; Wee, Sung Hun; Jain, Shikha; ...

2016-08-26

Here, we report on the out-of-plane thermal conductivities of tetragonal L1 0 FePt (001) easy-axis and cubic A1 FePt thin films via time-domain thermoreflectance over a temperature range from 133 K to 500 K. The out-of-plane thermal conductivity of the chemically ordered L10 phase with alternating Fe and Pt layers is ~23% greater than the thermal conductivity of the disordered A1 phase at room temperature and below. However, as temperature is increased above room temperature, the thermal conductivities of the two phases begin to converge. Molecular dynamics simulations on model FePt structures support our experimental findings and help shed moremore » light into the relative vibrational thermal transport properties of the L1 0 and A1 phases. Furthermore, unlike the varying temperature trends in the thermal conductivities of the two phases, the electronic scattering rates in the out-of-plane direction of the two phases are similar for the temperature range studied in this work.« less

Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Junfeng; Shafer, Padraic; Mion, Thomas R.

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

DOE PAGES

He, Junfeng; Shafer, Padraic; Mion, Thomas R.; ...

2016-03-01

Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

Temperature dependence of damage coefficient in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Faith, T. J.

1973-01-01

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genderen, E. van; Clabbers, M. T. B.; Center for Cellular Imaging and NanoAnalytics

A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at roommore » temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)« less

Optical investigation of BaFe2(As0.77P0.23)2 : Spin-fluctuation-mediated superconductivity under pressure

NASA Astrophysics Data System (ADS)

Uykur, E.; Kobayashi, T.; Hirata, W.; Miyasaka, S.; Tajima, S.; Kuntscher, C. A.

2017-06-01

Temperature-dependent reflectivity measurements in the frequency range 75-8000 cm-1 were performed on BaFe2(As0.77P0.23)2 single crystals under pressure up to ˜5 GPa . The obtained optical conductivity spectra have been analyzed to extract the electron-boson spectral density α2F (Ω ) . A sharp resonance peak was observed in α2F (Ω ) upon the superconducting transition, persisting throughout the applied pressure range. The energy and temperature dependences of this peak are consistent with the superconducting gap opening. Furthermore, several similarities with other experimental probes such as inelastic neutron scattering (INS) [D. S. Inosov et al., Nat. Lett. 6, 178 (2010), 10.1038/nphys1483] give evidence for the coupling to a bosonic mode, possibly due to spin fluctuations. Moreover, electronic correlations have been calculated via spectral weight analysis, which revealed that the system stays in the strongly correlated regime throughout the applied pressure range. However, a comparison to the parent compound showed that the electronic correlations are slightly decreased with P doping. The investigation of the phase diagram obtained by our optical study under pressure also revealed the coexistence of the spin-density wave and the superconducting regions, where the coexistence region shifts to the lower pressure range with increasing P content. Moreover, the optimum pressure range, where the highest superconducting transition temperature has been obtained, shows a nonlinear decrease with increasing P content.

Magneto-thermal reconnection of significance to space and astrophysics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coppi, B., E-mail: coppi@psfc.mit.edu

Magnetic reconnection processes that can be excited in collisionless plasma regimes are of interest to space and astrophysics to the extent that the layers in which reconnection takes place are not rendered unrealistically small by their unfavorable dependence on relevant macroscopic distances. The equations describing new modes producing magnetic reconnection over relatively small but significant distances, unlike tearing types of mode, even when dealing with large macroscopic scale lengths, are given. The considered modes are associated with a finite electron temperature gradient and have a phase velocity in the direction of the electron diamagnetic velocity that can reverse to themore » opposite direction as relevant parameters are varied over a relatively wide range. The electron temperature perturbation has a primary role in the relevant theory. In particular, when referring to regimes in which the longitudinal (to the magnetic field) electron thermal conductivity is relatively large, the electron temperature perturbation becomes singular if the ratio of the transverse to the longitudinal electron thermal conductivity becomes negligible.« less

Giant current fluctuations in an overheated single-electron transistor

NASA Astrophysics Data System (ADS)

Laakso, M. A.; Heikkilä, T. T.; Nazarov, Yuli V.

2010-11-01

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and single-electron tunneling changes to the dominance of the latter. In this interval, the current exhibits anomalous sensitivity to the effective electron temperature of the transistor island and its fluctuations. We present a detailed study of the current and temperature fluctuations at this interesting point. The methods implemented allow for a complete characterization of the distribution of the fluctuating quantities, well beyond the Gaussian approximation. We reveal and explore the parameter range where, for sufficiently small transistor islands, the current fluctuations become gigantic. In this regime, the optimal value of the current, its expectation value, and its standard deviation differ from each other by parametrically large factors. This situation is unique for transport in nanostructures and for electron transport in general. The origin of this spectacular effect is the exponential sensitivity of the current to the fluctuating effective temperature.

Characterization of photocathode dark current vs. temperature in image intensifier tube modules and intensified televisions

NASA Astrophysics Data System (ADS)

Bender, Edward J.; Wood, Michael V.; Hart, Steve; Heim, Gerald B.; Torgerson, John A.

2004-10-01

Image intensifiers (I2) have gained wide acceptance throughout the Army as the premier nighttime mobility sensor for the individual soldier, with over 200,000 fielded systems. There is increasing need, however, for such a sensor with a video output, so that it can be utilized in remote vehicle platforms, and/or can be electronically fused with other sensors. The image-intensified television (I2TV), typically consisting of an image intensifier tube coupled via fiber optic to a solid-state imaging array, has been the primary solution to this need. I2TV platforms in vehicles, however, can generate high internal heat loads and must operate in high-temperature environments. Intensifier tube dark current, called "Equivalent Background Input" or "EBI", is not a significant factor at room temperature, but can seriously degrade image contrast and intra-scene dynamic range at such high temperatures. Cooling of the intensifier's photocathode is the only practical solution to this problem. The US Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate (NVESD) and Ball Aerospace have collaborated in the reported effort to more rigorously characterize intensifier EBI versus temperature. NVESD performed non-imaging EBI measurements of Generation 2 and 3 tube modules over a large range of ambient temperature, while Ball performed an imaging evaluation of Generation 3 I2TVs over a similar temperature range. The findings and conclusions of this effort are presented.

Observation of pseudogap in MgB2

NASA Astrophysics Data System (ADS)

Patil, S.; Medicherla, V. R. R.; Ali, Khadiza; Singh, R. S.; Manfrinetti, P.; Wrubl, F.; Dhar, S. K.; Maiti, Kalobaran

2017-11-01

We investigate the electronic structure of a specially prepared highly dense conventional high temperature superconductor, MgB2, employing high resolution photoemission spectroscopy. The spectral evolution close to the Fermi energy is commensurate to BCS descriptions as expected. However, the spectra in the wider energy range reveal the emergence of a pseudogap much above the superconducting transition temperature indicating an apparent departure from the BCS scenario. The energy scale of the pseudogap is comparable to the energy of the E2g phonon mode responsible for superconductivity in MgB2 and the pseudogap can be attributed to the effect of electron-phonon coupling on the electronic structure. These results reveal a scenario of the emergence of the superconducting gap within an electron-phonon coupling induced pseudogap and have significant implications in the study of high temperature superconductors.

Kinetic Temperature and Electron Density Measurement in an Inductively Coupled Plasma Torch using Degenerate Four-Wave Mixing

NASA Technical Reports Server (NTRS)

Schafer, Julia; Lyons, Wendy; Tong, WIlliam G.; Danehy, Paul M.

2008-01-01

Laser wave mixing is presented as an effective technique for spatially resolved kinetic temperature measurements in an atmospheric-pressure radio-frequency inductively-coupled plasma. Measurements are performed in a 1 kW, 27 MHz RF plasma using a continuous-wave, tunable 811.5-nm diode laser to excite the 4s(sup 3)P2 approaches 4p(sup 3)D3 argon transition. Kinetic temperature measurements are made at five radial steps from the center of the torch and at four different torch heights. The kinetic temperature is determined by measuring simultaneously the line shape of the sub-Doppler backward phase-conjugate degenerate four-wave mixing and the Doppler-broadened forward-scattering degenerate four-wave mixing. The temperature measurements result in a range of 3,500 to 14,000 K+/-150 K. Electron densities measured range from 6.1 (+/-0.3) x 10(exp 15)/cu cm to 10.1 (+/-0.3) x 10(exp 15)/cu cm. The experimental spectra are analyzed using a perturbative treatment of the backward phase-conjugate and forward-geometry wave-mixing theory. Stark width is determined from the collisional broadening measured in the phase-conjugate geometry. Electron density measurements are made based on the Stark width. The kinetic temperature of the plasma was found to be more than halved by adding deionized water through the nebulizer.

Electronic transport properties of single-crystal bismuth nanowire arrays

NASA Astrophysics Data System (ADS)

Zhang, Zhibo; Sun, Xiangzhong; Dresselhaus, M. S.; Ying, Jackie Y.; Heremans, J.

2000-02-01

We present here a detailed study of the electrical transport properties of single-crystal bismuth nanowire arrays embedded in a dielectric matrix. Measurements of the resistance of Bi nanowire arrays with different wire diameters (60-110 nm) have been carried out over a wide range of temperatures (2.0-300 K) and magnetic fields (0-5.4 T). The transport properties of a heavily Te-doped Bi nanowire array have also been studied. At low temperatures, we show that the wire boundary scattering is the dominant scattering process for carriers in the undoped single-crystal Bi nanowires, while boundary scattering is less important for a heavily Te-doped sample, consistent with general theoretical considerations. The temperature dependences of the zero-field resistivity and of the longitudinal magneto-coefficient of the Bi nanowires were also studied and were found to be sensitive to the wire diameter. The quantum confinement of carriers is believed to play an important role in determining the overall temperature dependence of the zero-field resistivity. Theoretical considerations of the quantum confinement effects on the electronic band structure and on the transport properties of Bi nanowires are discussed. Despite the evidence for localization effects and diffusive electron interactions at low temperatures (T<=4.0 K), localization effects are not the dominant mechanisms affecting the resistivity or the magnetoresistance in the temperature range of this study.

Influence of electron doping on the ground state of (Sr 1-xLa x) 2IrO 4

DOE PAGES

Chen, Xiang; Hogan, Tom; Walkup, D.; ...

2015-08-17

The evolution of the electronic properties of electron-doped (Sr 1-xLa x) 2IrO 4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0:02 and charge transport remains percolative up to the limit of La substitution (x =0:06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electronsmore » are doped into Sr 2IrO 4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and di erences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.« less

Realizing one-dimensional quantum and high-frequency transport features in aligned single-walled carbon nanotube ropes

NASA Astrophysics Data System (ADS)

Ncube, Siphephile; Chimowa, George; Chiguvare, Zivayi; Bhattacharyya, Somnath

2014-07-01

The superiority of the electronic transport properties of single-walled carbon nanotube (SWNT) ropes over SWNT mats is verified from low temperature and frequency-dependent transport. The overall change of resistance versus in nanotube mats shows that 3D variable range hopping is the dominant conduction mechanism within the 2-300 K range. The magneto-resistance (MR) is found to be predominantly negative with a parabolic nature, which can also be described by the hopping model. Although the positive upturn of the MR at low temperatures establishes the contribution from quantum interference, the inherent quantum transport in individual tubes is suppressed at elevated temperatures. Therefore, to minimize multi-channel effects from inter-tube interactions and other defects, two-terminal devices were fabricated from aligned SWNT (extracted from a mat) for low temperature transport as well as high-frequency measurements. In contrast to the mat, the aligned ropes exhibit step-like features in the differential conductance within the 80-300 K temperature range. The effects of plasmon propagation, unique to one dimension, were identified in electronic transport as a non-universal power-law dependence of the differential conductance on temperature and source-drain voltage. The complex impedance showed high power transmission capabilities up to 65 GHz as well as oscillations in the frequency range up to 30 GHz. The measurements suggest that aligned SWNT ropes have a realistic potential for high-speed device applications.

Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Fanfoni, M.

2006-04-17

We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 deg. C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 deg. C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.

Influence of oxygen-vacancy complex /A center/ on piezoresistance of n-type silicon.

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Loggins, C. D., Jr.

1972-01-01

Changes in both magnitude and temperature dependence of the piezoresistance of electron-irradiated n-type silicon, induced by the latter's oxygen-vacancy complex (A center), are shown to be due to the fact that the presence of the A center causes the total conduction-band electron concentration to change with an applied stress. This change in electron concentration leads to an additional piezoresistance contribution that is expected to be important in certain many-valley semiconductors. This offers the possibility of tailoring the thermal variations of semiconductor mechanical sensors to more desirable values over limited temperature ranges.

Stability of Nonstationary Cooling of Pure Hydrogen Gas with Respect to the Number of Discrete Levels Taken into Account

NASA Astrophysics Data System (ADS)

Belova, O. M.; Bychkov, K. V.

2018-03-01

The effect of the number K of atomic hydrogen levels taken into account on the cooling of the gas behind a shock front is studied. The calculations are done for the conditions in the atmospheres of long-period Mira Ceti type variables. K ranges from 2 to 25. The electron temperature Te(t; K) and ionization state x(r,K) asymptotically approach limiting functions Te(t) and x(t) that are independent of K. After the maximum electron temperature is reached, a partial equilibrium phase sets in, during which the populations of the highly excited discrete levels with principal quantum numbers ≥ 8 obey the Saha equation for the instantaneous electron temperature and density.

Extremely weak linear electron-phonon coupling in iron-free hemeproteins studied by phase-modulated photon echo

NASA Astrophysics Data System (ADS)

Lin, J. W.-I.; Tada, T.; Saikan, S.; Kushida, T.; Tani, T.

1991-10-01

The femtosecond accumulated photon echoes in iron-free myoglobin and iron-free cytochrome-C reveal that the linear electron-phonon coupling is extremely weak in these materials. This feature also manifests itself in the absence of the Stokes shift in the fluorescence spectrum over a wide range of temperatures from liquid-helium temperatures to near room temperatures. The origin of the weak coupling is attributed to the close packing of the porphyrin chromophores into a hydrophobic environment, which is constructed out of the polypeptide chain of the protein. The present results hint at the so-called hydrophobic compartmentalization of the chromophores as one of the important factors in reducing markedly the electron-phonon coupling in dye-polymer systems.

Ultracompliant Heterogeneous Copper-Tin Nanowire Arrays Making a Supersolder.

PubMed

Gong, Wei; Li, Pengfei; Zhang, Yunheng; Feng, Xuhui; Major, Joshua; DeVoto, Douglas; Paret, Paul; King, Charles; Narumanchi, Sreekant; Shen, Sheng

2018-06-13

Due to the substantial increase in power density, thermal interface resistance that can constitute more than 50% of the total thermal resistance has generally become a bottleneck for thermal management in electronics. However, conventional thermal interface materials (TIMs) such as solder, epoxy, gel, and grease cannot fulfill the requirements of electronics for high-power and long-term operation. Here, we demonstrate a high-performance TIM consisting of a heterogeneous copper-tin nanowire array, which we term "supersolder" to emulate the role of conventional solders in bonding various surfaces. The supersolder is ultracompliant with a shear modulus 2-3 orders of magnitude lower than traditional solders and can reduce the thermal resistance by two times as compared with the state-of-the-art TIMs. This supersolder also exhibits excellent long-term reliability with >1200 thermal cycles over a wide temperature range. By resolving this critical thermal bottleneck, the supersolder enables electronic systems, ranging from microelectronics and portable electronics to massive data centers, to operate at lower temperatures with higher power density and reliability.

Positron Annihilation Measurements of High Temperature Superconductors

NASA Astrophysics Data System (ADS)

Jung, Kang

1995-01-01

The temperature dependence of positron annihilation parameters has been measured for basic YBCO, Dy-doped, and Pr-doped superconducting compounds. The physical properties, such as crystal structure, electrical resistance, and critical temperature, have been studied for all samples. In the basic YBCO and Dy-doped samples, the defect -related lifetime component tau_{2 } was approximately constant from room temperature to above the critical temperature and then showed a step -like decrease in the temperature range 90K { ~} 40K. No significant temperature dependence was found in the short- and long-lifetime components, tau_{1} and tau_{3}. The x-ray diffraction data showed that the crystal structure of these two samples was almost the same. These results indicated that the electronic structure changed below the critical temperature. No transition was observed in the Pr-doped YBCO sample. The advanced computer program "PFPOSFIT" for positron lifetime analysis was modified to run on the UNIX system of the University of Utah. The destruction of superconductivity with Pr doping may be due to mechanisms such as hole filling or hole localization of the charge carriers and may be related to the valence state of the Pr ion. One-parameter analyses like the positron mean lifetime parameter and the Doppler line shape parameter S also have been studied. It was found that a transition in Doppler line shape parameter S was associated with the superconducting transition temperature in basic YBCO, Dy -doped, and 0.5 Pr-doped samples, whereas no transition was observed in the nonsuperconducting Pr-doped sample. The Doppler results indicate that the average electron momentum at the annihilation sites increases as temperature is lowered across the superconducting transition range and that electronic structure change plays an important role in high temperature superconductivity.

Tribological behavior and self-healing functionality of TiNbCN-Ag coatings in wide temperature range

NASA Astrophysics Data System (ADS)

Bondarev, A. V.; Kiryukhantsev-Korneev, Ph. V.; Levashov, E. A.; Shtansky, D. V.

2017-02-01

Ag- and Nb-doped TiCN coatings with about 2 at.% of Nb and Ag contents varied between 4.0 and 15.1 at.% were designed as promising materials for tribological applications in a wide temperature range. We report on the structure, mechanical, and tribological properties of TiNbCN-Ag coatings fabricated by simultaneous co-sputtering of TiC0.5 + 10%Nb2C and Ag targets in comparison with those of Ag-free coating. The tribological characteristics were evaluated during constant-temperature tests both at room temperature and 300 °C, as well as during dynamic temperature ramp tests in the range of 25-700 °C. The coating structure and elemental composition were studied by means of X-ray diffraction, scanning and transmission electron microscopy, and glow discharge optical emission spectroscopy. The coating microstructures and elemental compositions inside wear tracks, as well as the wear products, were examined by scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy. We demonstrate that simultaneous alloying with Nb and Ag permits to overcome the main drawbacks of TiCN coatings such as their relatively high values of friction coefficient at elevated temperatures and low oxidation resistance. It is shown that a relatively high amount of Ag (15 at.%) is required to provide enhanced tribological behavior in a wide temperature range of 25-700 °C. In addition, the prepared Ag-doped coatings demonstrated active oxidation protection and self-healing functionality due to the segregation of Ag metallic particles in damage areas such as cracks, pin-holes, or oxidation sites.

Observation of the effects of stronger magnetic fields on warm, higher energy electrons and ion beams transiting a double layer in a helicon plasma

NASA Astrophysics Data System (ADS)

Scharer, John; Sung, Yung-Ta; Li, Yan

2017-10-01

Fast, two-temperature electrons (>80 eV, Te =13 eV tail, 4 eV bulk) with substantial tail density fractions are created at low (< = 1.7 mtorr) Ar pressure @ 340 G in the antenna region with nozzle mirror ratio of 1.4 on MadHeX @ 900W. These distributions including a fast tail are observed upstream of a double layer. The fast, untrapped tail electrons measured downstream of the double layer have a higher temperature of 13 eV than the trapped, upstream electrons of 4 eV temperature. Upstream plasma potential fluctuations of + - 30 percent are observed. An RF-compensated Langmuir probe is used to measure the electron temperatures and densities and OES, mm wave IF and an RPA for the IEDF are also utilized. As the magnetic field is increased to 1020 G, an increase in the electron temperature and density upstream of the double layer is observed with Te= 15-25 eV with a primarily single temperature mode. Accelerated ion beam energies in the range of 65-120 eV are observed as the magnetic field is increased from 340 to 850 G. The role of the nozzle, plasma double layer and helicon wave coupling on the EEDF and ion acceleration will be discussed. Research supported in part by the University of Wisconsin.

Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Young-Cheol; Kim, Yu-Sin; Lee, Hyo-Chang

2015-08-15

The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. Frommore » the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.« less

Hopkins Ultraviolet Telescope determination of the Io torus electron temperature

NASA Technical Reports Server (NTRS)

Hall, D. T.; Bednar, C. J.; Durrance, S. T.; Feldman, P. D.; Mcgrath, M. A.; Moos, H. W.; Strobel, D. F.

1994-01-01

Sulfur ion emissions from the Io plasma torus observed by the Hopkins Ultraviolet Telescope (HUT) in 1990 December have been analyzed to determine the effective temperature of the exciting electrons. Spectra were obtained with a long slit that extended from 3.1 to 8.7 Jupiter radii R(sub J) on both dawn and dusk torus ansae. The average temperature of electrons exciting S(2+) emissions from the dawn ansa is (4800 +/- 2400) K lower than on the dusk ansa, a dawn-dusk asymmetry comparable in both sign and magnitude to that measured by the Voyager Ultraviolet Spectrograph (UVS) experiment. Emissions from S(2+) ions are generated in a source region with electron temperatures in the range 32,000-56,000 K; S(3+) ion emissions are excited by electrons that average 20,000-40,000 K hotter. This distinct difference suggests that the S(3+) emission source region is spatially separate from the S(2+) source region. Estimated relative aperture filling factors suggest that the S(3+) emissions originate from a region more extended out of the centrifugal plane than the S(2+) emissions.

A Brief Overview of NASA Glenn Research Center Sensor and Electronics Activities

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2012-01-01

Aerospace applications require a range of sensing technologies. There is a range of sensor and sensor system technologies being developed using microfabrication and micromachining technology to form smart sensor systems and intelligent microsystems. Drive system intelligence to the local (sensor) level -- distributed smart sensor systems. Sensor and sensor system development examples: (1) Thin-film physical sensors (2) High temperature electronics and wireless (3) "lick and stick" technology. NASA GRC is a world leader in aerospace sensor technology with a broad range of development and application experience. Core microsystems technology applicable to a range of application environmentS.

Enhancing the nonlinear thermoelectric response of a correlated quantum dot in the Kondo regime by asymmetrical coupling to the leads

NASA Astrophysics Data System (ADS)

Pérez Daroca, Diego; Roura-Bas, Pablo; Aligia, Armando A.

2018-04-01

We study the low-temperature properties of the differential response of the current to a temperature gradient at finite voltage in a single-level quantum dot including electron-electron interaction, nonsymmetric couplings to the leads, and nonlinear effects. The calculated response is significantly enhanced in setups with large asymmetries between the tunnel couplings. In the investigated range of voltages and temperatures with corresponding energies up to several times the Kondo energy scale, the maximum response is enhanced nearly an order of magnitude with respect to symmetric coupling to the leads.

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Haowei; Gray, A. X.; Granitzka, P.

Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic x-ray scattering is used to measure the excitation spectrum of charge and spin degrees of freedom at the vanadium L edge under different polarization and temperature conditions, revealing excitations that differ greatly from those seen in optical measurements. Furthermore, these spectra encode the evolution of short-range energetics across the metal-insulator transition, including the low-temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.

A 2.5-2.7 THz Room Temperature Electronic Source

NASA Technical Reports Server (NTRS)

Maestrini, Alain; Mehdi, Imran; Lin, Robert; Siles, Jose Vicente; Lee, Choonsup; Gill, John; Chattopadhyay, Goutam; Schlecht, Erich; Bertrand, Thomas; Ward, John

2011-01-01

We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.

Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

NASA Astrophysics Data System (ADS)

Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

2018-03-01

The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Investigate the electrical and thermal properties of the low temperature resistant silver nanowire fabricated by two-beam laser technique

NASA Astrophysics Data System (ADS)

He, Gui-Cang; Dong, Xian-Zi; Liu, Jie; Lu, Heng; Zhao, Zhen-Sheng

2018-05-01

A two-beam laser fabrication technique is introduced to fabricate the single silver nanowire (AgNW) on polyethylene terephthalate (PET) substrate. The resistivity of the AgNW is (1.31 ± 0.05) × 10-7 Ω·m, which is about 8 times of the bulk silver resistivity (1.65 × 10-8 Ω·m). The AgNW electrical resistance is measured in temperature range of 10-300 K and fitted with the Bloch-Grüneisen formula. The fitting results show that the residue resistance is 153 Ω, the Debye temperature is 210 K and the electron-phonon coupling constant is (5.72 ± 0.24) × 10-8 Ω·m. Due to the surface scattering, the Debye temperature and the electron-phonon coupling constant are lower than those of bulk silver, and the residue resistance is bigger than that of bulk silver. Thermal conductivity of the single AgNW is calculated in the corresponding temperature range, which is the biggest at the temperature approaching the Debye temperature. The AgNW on PET substrate is the low temperature resistance material and is able to be operated stably at such a low temperature of 10 K.

Accelerated Testing Of Photothermal Degradation Of Polymers

NASA Technical Reports Server (NTRS)

Kim, Soon Sam; Liang, Ranty Hing; Tsay, Fun-Dow

1989-01-01

Electron-spin-resonance (ESR) spectroscopy and Arrhenius plots used to determine maximum safe temperature for accelerated testing of photothermal degradation of polymers. Aging accelerated by increasing illumination, temperature, or both. Results of aging tests at temperatures higher than those encountered in normal use valid as long as mechanism of degradation same throughout range of temperatures. Transition between different mechanisms at some temperature identified via transition between activation energies, manifesting itself as change in slope of Arrhenius plot at that temperature.

A Fully Transparent Flexible Sensor for Cryogenic Temperatures Based on High Strength Metallurgical Graphene

PubMed Central

Pawlak, Ryszard; Lebioda, Marcin; Rymaszewski, Jacek; Szymanski, Witold; Kolodziejczyk, Lukasz; Kula, Piotr

2016-01-01

Low-temperature electronics operating in below zero temperatures or even below the lower limit of the common −65 to 125 °C temperature range are essential in medical diagnostics, in space exploration and aviation, in processing and storage of food and mainly in scientific research, like superconducting materials engineering and their applications—superconducting magnets, superconducting energy storage, and magnetic levitation systems. Such electronic devices demand special approach to the materials used in passive elements and sensors. The main goal of this work was the implementation of a fully transparent, flexible cryogenic temperature sensor with graphene structures as sensing element. Electrodes were made of transparent ITO (Indium Tin Oxide) or ITO/Ag/ITO conductive layers by laser ablation and finally encapsulated in a polymer coating. A helium closed-cycle cryostat has been used in measurements of the electrical properties of these graphene-based temperature sensors under cryogenic conditions. The sensors were repeatedly cooled from room temperature to cryogenic temperature. Graphene structures were characterized using Raman spectroscopy. The observation of the resistance changes as a function of temperature indicates the potential use of graphene layers in the construction of temperature sensors. The temperature characteristics of the analyzed graphene sensors exhibit no clear anomalies or strong non-linearity in the entire studied temperature range (as compared to the typical carbon sensor). PMID:28036036

A Fully Transparent Flexible Sensor for Cryogenic Temperatures Based on High Strength Metallurgical Graphene.

PubMed

Pawlak, Ryszard; Lebioda, Marcin; Rymaszewski, Jacek; Szymanski, Witold; Kolodziejczyk, Lukasz; Kula, Piotr

2016-12-28

Low-temperature electronics operating in below zero temperatures or even below the lower limit of the common -65 to 125 °C temperature range are essential in medical diagnostics, in space exploration and aviation, in processing and storage of food and mainly in scientific research, like superconducting materials engineering and their applications-superconducting magnets, superconducting energy storage, and magnetic levitation systems. Such electronic devices demand special approach to the materials used in passive elements and sensors. The main goal of this work was the implementation of a fully transparent, flexible cryogenic temperature sensor with graphene structures as sensing element. Electrodes were made of transparent ITO (Indium Tin Oxide) or ITO/Ag/ITO conductive layers by laser ablation and finally encapsulated in a polymer coating. A helium closed-cycle cryostat has been used in measurements of the electrical properties of these graphene-based temperature sensors under cryogenic conditions. The sensors were repeatedly cooled from room temperature to cryogenic temperature. Graphene structures were characterized using Raman spectroscopy. The observation of the resistance changes as a function of temperature indicates the potential use of graphene layers in the construction of temperature sensors. The temperature characteristics of the analyzed graphene sensors exhibit no clear anomalies or strong non-linearity in the entire studied temperature range (as compared to the typical carbon sensor).

Anomalous amplitude of the quantum oscillations in the longitudinal magneto-thermoelectric power

NASA Astrophysics Data System (ADS)

Satoh, N.

2018-03-01

Longitudinal magneto-thermoelectric power Syy (y) of a pure bismuth single crystal was measured in magnetic fields up to 8T at several fixed temperatures between 1.4 and 15 K to investigate the magneto-phonon effect in the longitudinal magneto-thermoelectric power (MTP). The oscillation patterns of the longitudinal MTP was similar to that of the longitudinal Shubnikov-de Haas (SdH) effect, expectedly. However, the observed amplitude of oscillations showed a curious temperature dependence. That is, in the range of temperature T > 4.2 K, the amplitude has a maximum around 9K, which is well described by considering the inter-Landau level scattering of electrons. On the contrary, in the range of T < 4.2K, the observed amplitude is enhanced markedly although that of the longitudinal SdH oscillations becomes less pronounced by lowering temperature. This discrepancy may be attributed to the effect of the surface (wrapping) current and to the energy dependence of the electron relaxation time.

Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiemann, Yvonne; Simmendinger, Julian; Clauss, Conrad

2015-05-11

We describe a fully broadband approach for electron spin resonance (ESR) experiments, where it is possible to tune not only the magnetic field but also the frequency continuously over wide ranges. Here, a metallic coplanar transmission line acts as compact and versatile microwave probe that can easily be implemented in different cryogenic setups. We perform ESR measurements at frequencies between 0.1 and 67 GHz and at temperatures between 50 mK and room temperature. Three different types of samples (Cr{sup 3+} ions in ruby, organic radicals of the nitronyl-nitroxide family, and the doped semiconductor Si:P) represent different possible fields of application formore » the technique. We demonstrate that an extremely large phase space in temperature, magnetic field, and frequency for ESR measurements, substantially exceeding the range of conventional ESR setups, is accessible with metallic coplanar lines.« less

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Kaplar, Robert J.

2017-02-01

Mobility and critical electric field for bulk AlxGa1-xN alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitations due to different scattering mechanisms, including alloy, optical polar phonon, deformation potential, and piezoelectric scattering. The commonly used unipolar figure of merit (appropriate for vertical-device architectures), which increases strongly with increasing mobility and critical electric field, is examined across the alloy composition range to estimate the potential performance in power electronics applications. Alloy scattering is the dominant limitation to mobility and thus also for the unipolar figure of merit. However, at higher alloy compositions, the limitations due to alloy scattering are overcome by increased critical electric field. These trade-offs, and their temperature dependence, are quantified in the analysis.

Andreev current for low temperature thermometry

NASA Astrophysics Data System (ADS)

Faivre, T.; Golubev, D. S.; Pekola, J. P.

2015-05-01

We demonstrate experimentally that disorder enhanced Andreev current in a tunnel junction between a normal metal and a superconductor provides a method to measure electronic temperature, specifically at temperatures below 200 mK when aluminum is used. This Andreev thermometer has some advantages over conventional quasiparticle thermometers: For instance, it does not conduct heat and its reading does not saturate until at lower temperatures. Another merit is that the responsivity is constant over a wide temperature range.

Elastic properties, thermal stability, and thermodynamic parameters of MoAlB

NASA Astrophysics Data System (ADS)

Kota, Sankalp; Agne, Matthias; Zapata-Solvas, Eugenio; Dezellus, Olivier; Lopez, Diego; Gardiola, Bruno; Radovic, Miladin; Barsoum, Michel W.

2017-04-01

MoAlB is the first and, so far, the only transition-metal boride that forms alumina when heated in air and is thus potentially useful for high-temperature applications. Herein, the thermal stability in argon and vacuum atmospheres and the thermodynamic parameters of bulk polycrystalline MoAlB were investigated experimentally. At temperatures above 1708 K, in vacuum and inert atmospheres, this compound incongruently melts into the binary MoB and liquid aluminum metal as confirmed by differential thermal analysis, quenching experiments, x-ray diffraction, and scanning electron microscopy. Making use of that information together with heat-capacity measurements in the 4-1000-K temperature range—successfully modeled as the sum of lattice, electronic, and dilation contributions—the standard enthalpy, entropy, and free energy of formation are computed and reported for the full temperature range. The standard enthalpy of formation of MoAlB at 298 K was found to be -132 ±3.2 kJ/mol. Lastly, the thermal conductivity values are computed and modeled using a variation of the Slack model in the 300-1600-K temperature range.

NMR relaxation studies in doped poly-3-methylthiophene

NASA Astrophysics Data System (ADS)

Singh, K. Jugeshwar; Clark, W. G.; Gaidos, G.; Reyes, A. P.; Kuhns, P.; Thompson, J. D.; Menon, R.; Ramesh, K. P.

2015-05-01

NMR relaxation rates (1 /T1 ), magnetic susceptibility, and electrical conductivity studies in doped poly-3-methylthiophene are reported in this paper. The magnetic susceptibility data show the contributions from both Pauli and Curie spins, with the size of the Pauli term depending strongly on the doping level. Proton and fluorine NMR relaxation rates have been studied as a function of temperature (3-300 K) and field (for protons at 0.9, 9.0, 16.4, and 23.4 T, and for fluorine at 9.0 T). The temperature dependence of T1 is classified into three regimes: (a) For T <(g μBB /2 kB ) , the relaxation mechanism follows a modified Korringa relation due to electron-electron interactions and disorder. 1H - T1 is due to the electron-nuclear dipolar interaction in addition to the contact term. (b) For the intermediate temperature range (g μBB /2 kB )

Time-resolved study of the electron temperature and number density of argon metastable atoms in argon-based dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Desjardins, E.; Laurent, M.; Durocher-Jean, A.; Laroche, G.; Gherardi, N.; Naudé, N.; Stafford, L.

2018-01-01

A combination of optical emission spectroscopy and collisional-radiative modelling is used to determine the time-resolved electron temperature (assuming Maxwellian electron energy distribution function) and number density of Ar 1s states in atmospheric pressure Ar-based dielectric barrier discharges in presence of either NH3 or ethyl lactate. In both cases, T e values were higher early in the discharge cycle (around 0.8 eV), decreased down to about 0.35 eV with the rise of the discharge current, and then remained fairly constant during discharge extinction. The opposite behaviour was observed for Ar 1s states, with cycle-averaged values in the 1017 m-3 range. Based on these findings, a link was established between the discharge ionization kinetics (and thus the electron temperature) and the number density of Ar 1s state.

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Milnes P.; Iyengar, Madhusudan K.; Schmidt, Roger R.

Energy efficient control of a cooling system cooling an electronic system is provided. The control includes automatically determining at least one adjusted control setting for at least one adjustable cooling component of a cooling system cooling the electronic system. The automatically determining is based, at least in part, on power being consumed by the cooling system and temperature of a heat sink to which heat extracted by the cooling system is rejected. The automatically determining operates to reduce power consumption of the cooling system and/or the electronic system while ensuring that at least one targeted temperature associated with the coolingmore » system or the electronic system is within a desired range. The automatically determining may be based, at least in part, on one or more experimentally obtained models relating the targeted temperature and power consumption of the one or more adjustable cooling components of the cooling system.« less

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Single Crystal Growth, Resistivity, and Electronic Structure of the Weyl Semimetals NbP and TaP

DOE PAGES

Sapkota, Deepak; Mukherjee, Rupam; Mandrus, David

2016-12-06

We have successfully synthesized niobium monophosphide and tantalum monophosphide crystals by a chemical vapor transport technique. We report resistivity vs. temperature of both materials in the temperature range from 2 K to 300 K. We have also performed electronic structure calculations and present the band structure and density of states of these two compounds. The calculations show that both compounds are semimetals, as their conduction and valence bands overlap near the Fermi energy.

Spectral function of few electrons in quantum wires and carbon nanotubes as a signature of Wigner localization

NASA Astrophysics Data System (ADS)

Secchi, Andrea; Rontani, Massimo

2012-03-01

We demonstrate that the profile of the space-resolved spectral function at finite temperature provides a signature of Wigner localization for electrons in quantum wires and semiconducting carbon nanotubes. Our numerical evidence is based on the exact diagonalization of the microscopic Hamiltonian of few particles interacting in gate-defined quantum dots. The minimal temperature required to suppress residual exchange effects in the spectral function image of (nanotubes) quantum wires lies in the (sub)kelvin range.

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, G. F., E-mail: ngf@icp.ac.ru; Gapanovich, M. V.; Gremenok, V. F.

2017-01-15

The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to E{sub a} ~ 0.054 eV.

Short-scale turbulent fluctuations driven by the electron-temperature gradient in the national spherical torus experiment.

PubMed

Mazzucato, E; Smith, D R; Bell, R E; Kaye, S M; Hosea, J C; LeBlanc, B P; Wilson, J R; Ryan, P M; Domier, C W; Luhmann, N C; Yuh, H; Lee, W; Park, H

2008-08-15

Measurements with coherent scattering of electromagnetic waves in plasmas of the National Spherical Torus Experiment indicate the existence of turbulent fluctuations in the range of wave numbers k perpendicular rho(e)=0.1-0.4, corresponding to a turbulence scale length nearly equal to the collisionless skin depth. Experimental observations and agreement with numerical results from a linear gyrokinetic stability code support the conjecture that the observed turbulence is driven by the electron-temperature gradient.

Flow properties of the solar wind obtained from white light data and a two-fluid model

NASA Technical Reports Server (NTRS)

Habbal, Shadia Rifai; Esser, Ruth; Guhathakurta, Madhulika; Fisher, Richard

1994-01-01

The flow properties of the solar wind from 1 R(sub s) to 1 AU were obtained using a two fluid model constrained by density and scale height temperatures derived from white light observations, as well as knowledge of the electron temperature in coronal holes. The observations were obtained with the white light coronographs on SPARTAN 201-1 and at Mauna Loa (Hawaii), in a north polar coronal hole from 1.16 to 5.5 R(sub s) on 11 Apr. 1993. By specifying the density, temperature, Alfven wave velocity amplitude and heating function at the coronal base, it was found that the model parameters fit well the constraints of the empirical density profiles and temperatures. The optimal range of the input parameters was found to yield a higher proton temperature than electron temperature in the inner corona. The results indicate that no preferential heating of the protons at larger distances is needed to produce higher proton than electron temperatures at 1 AU, as observed in the high speed solar wind.

Metallurgical evaluation of factors influencing the ductility of aged T-111

NASA Technical Reports Server (NTRS)

Gold, R. E.

1972-01-01

The metallurgical factors influencing the ductility of T-111 (Ta-8W-2Hf) alloy following long-time exposures of GTA welds and tubing in the temperature range 982 C (1800 F) through 1316 C (2400 F) were evaluated by means of scanning and transmission electron microscopy, Auger electron emission spectroscopy, and optical metallographic procedures. No classical aging response occurs in the alloy over the temperature range studied. The ductility impairment implied by previous investigations is not the result of microstructural response of the alloy to thermal exposures. Intergranular failure in the GTA sheet welds appears the result of random contamination by silicon, potassium, and/or fluorine at the grain boundaries of the fusion zones. Exposure to lithium at high temperatures had no adverse effects on the ductility of T-111 tubing. These materials were, however, sensitive to post-age handling and testing procedures.

A study of density measurements in hypersonic helium tunnels using an electron beam fluorescence technique

NASA Technical Reports Server (NTRS)

Honaker, W. C.; Hunter, W. W., Jr.; Woods, W. C.

1979-01-01

A series of experiments have been conducted at Langley Research Center to determine the feasibility of using electron-beam fluorescence to measure the free-stream static density of gaseous helium flow over a wide range of conditions. These experiments were conducted in the Langley hypersonic helium tunnel facility and its 3-inch prototype. Measurements were made for a range of stagnation pressures and temperatures and produced free-stream number densities of 1.53 x 10 to the 23rd to 1.25 x 10 to the 24th molecules/cu m and static temperatures from 2 K to 80 K. The results showed the collision quenching cross section to be 4.4 x 10 to the -15th sq cm at 1 K and to have a weak temperature dependence of T to the 1/6. With knowledge of these two values, the free-stream number density can be measured quite accurately.

Hot-Electron Photon Counters for Detecting Terahertz Photons

NASA Technical Reports Server (NTRS)

Karasik, Boris; Sergeyev, Andrei

2005-01-01

A document proposes the development of hot-electron photon counters (HEPCs) for detecting terahertz photons in spaceborne far-infrared astronomical instruments. These would be superconducting- transition-edge devices: they would contain superconducting bridges that would have such low heat capacities that single terahertz photons would cause transient increases in their electron temperatures through the superconducting- transition range, thereby yielding measurable increases in electrical resistance. Single devices or imaging arrays of the devices would be fabricated as submicron-sized bridges made from films of disordered Ti (which has a superconducting- transition temperature of .0.35 K) between Nb contacts on bulk silicon or sapphire substrates. In operation, these devices would be cooled to a temperature of .0.3 K. The proposed devices would cost less to fabricate and operate, relative to integrating bolometers of equal sensitivity, which must be operated at a temperature of approx. = 0.1 K.

Optimization of Pulsed-DEER Measurements for Gd-Based Labels: Choice of Operational Frequencies, Pulse Durations and Positions, and Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitsimring, A.; Astashkin, A. V.; Enemark, J. H.

2012-12-29

In this work, the experimental conditions and parameters necessary to optimize the long-distance (≥ 60 Å) Double Electron-Electron Resonance (DEER) measurements of biomacromolecules labeled with Gd(III) tags are analyzed. The specific parameters discussed are the temperature, microwave band, the separation between the pumping and observation frequencies, pulse train repetition rate, pulse durations and pulse positioning in the electron paramagnetic resonance spectrum. It was found that: (i) in optimized DEER measurements, the observation pulses have to be applied at the maximum of the EPR spectrum; (ii) the optimal temperature range for Ka-band measurements is 14-17 K, while in W-band the optimalmore » temperatures are between 6-9 K; (iii) W-band is preferable to Ka-band for DEER measurements. Recent achievements and the conditions necessary for short-distance measurements (<15 Å) are also briefly discussed.« less

OM300 Direction Drilling Module

DOE Data Explorer

MacGugan, Doug

2013-08-22

OM300 – Geothermal Direction Drilling Navigation Tool: Design and produce a prototype directional drilling navigation tool capable of high temperature operation in geothermal drilling Accuracies of 0.1° Inclination and Tool Face, 0.5° Azimuth Environmental Ruggedness typical of existing oil/gas drilling Multiple Selectable Sensor Ranges High accuracy for navigation, low bandwidth High G-range & bandwidth for Stick-Slip and Chirp detection Selectable serial data communications Reduce cost of drilling in high temperature Geothermal reservoirs Innovative aspects of project Honeywell MEMS* Vibrating Beam Accelerometers (VBA) APS Flux-gate Magnetometers Honeywell Silicon-On-Insulator (SOI) High-temperature electronics Rugged High-temperature capable package and assembly process

Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

NASA Astrophysics Data System (ADS)

Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

2018-05-01

We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Traveling interface modulations and anisotropic front propagation in ammonia oxidation over Rh(110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rafti, Matías; Institut für Physikalische Chemie und Elektrochemie, Leibniz-Universität Hannover, Callinstr. 3-3a, D-30167 Hannover; Borkenhagen, Benjamin

The bistable NH{sub 3} + O{sub 2} reaction over a Rh(110) surface was explored in the pressure range 10{sup −6}–10{sup −3} mbar and in the temperature range 300–900 K using photoemission electron microscopy and low energy electron microscopy as spatially resolving methods. We observed a history dependent anisotropy in front propagation, traveling interface modulations, transitions with secondary reaction fronts, and stationary island structures.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

NASA Astrophysics Data System (ADS)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

NASA Astrophysics Data System (ADS)

Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-04-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Effects of electron beam irradiation and temperature on the treatment of swine wastewater using an ion exchange biological reactor.

PubMed

Lim, Seung Joo; Kim, Tak-Hyun; Lee, Sang-hun; Kim, Jun-young; Kim, Sun-kyoung

2013-06-01

Swine wastewater was treated using an ion exchange biological reactor (IEBR). Organic matter and nutrient in swine wastewater were pre-treated by electron beam irradiation. The optimal dose for solubilization of organic matter in swine wastewater ranged from 20 kGy to 75 kGy. The carbohydrates, proteins, and lipids were investigated as proteins and lipids mainly contained the solubilized organic matter. The solubilization of organic matter in swine wastewater was affected by the combination effects of temperature and dose. The maximum chemical oxygen demand (COD) and ammonia removal efficiencies were 74.4% and 76.7% at a dose of 0 kGy under room temperatures (23.0°C). The removal of ammonia was significantly affected by low temperature (15.3°C). On the other hand, the removal of phosphorus was not a function of electron beam irradiation or temperature because struvite is one of the main removal mechanisms under anoxic conditions. Published by Elsevier Ltd.

Thermodynamic properties and transport coefficients of a two-temperature polytetrafluoroethylene vapor plasma for ablation-controlled discharge applications

NASA Astrophysics Data System (ADS)

Wang, Haiyan; Wang, Weizong; Yan, Joseph D.; Qi, Haiyang; Geng, Jinyue; Wu, Yaowu

2017-10-01

Ablation-controlled plasmas have been used in a range of technical applications where local thermodynamic equilibrium (LTE) is often violated near the wall due to the strong cooling effect caused by the ablation of wall materials. The thermodynamic and transport properties of ablated polytetrafluoroethylene (PTFE) vapor, which determine the flowing plasma behavior in such applications, are calculated based on a two-temperature model at atmospheric pressure. To our knowledge, no data for PTFE have been reported in the literature. The species composition and thermodynamic properties are numerically determined using the two-temperature Saha equation and the Guldberg-Waage equation according to van de Sanden et al’s derivation. The transport coefficients, including viscosity, thermal conductivity and electrical conductivity, are calculated with the most recent collision interaction potentials using Devoto’s electron and heavy-particle decoupling approach but expanded to the third-order approximation (second-order for viscosity) in the frame of the Chapman-Enskog method. Results are computed for different degrees of thermal non-equilibrium, i.e. the ratio of electron to heavy-particle temperatures, from 1 to 10, with electron temperature ranging from 300 to 40 000 K. Plasma transport properties in the LTE state obtained from the present work are compared with existing published results and the causes for the discrepancy analyzed. The two-temperature plasma properties calculated in the present work enable the modeling of wall ablation-controlled plasma processes.

Thales Cryogenics rotary cryocoolers for HOT applications

NASA Astrophysics Data System (ADS)

Martin, Jean-Yves; Cauquil, Jean-Marc; Benschop, Tonny; Freche, Sébastien

2012-06-01

Thales Cryogenics has an extensive background in delivering reliable linear and rotary coolers for military, civil and space programs. Recent work carried out at detector level enable to consider a higher operation temperature for the cooled detectors. This has a direct impact on the cooling power required to the cryocooler. In continuation of the work presented last year, Thales cryogenics has studied the operation and optimization of the rotary cryocoolers at high cold regulation temperature. In this paper, the performances of the Thales Cryogenics rotary cryocoolers at elevated cold regulation temperature will be presented. From these results, some trade-offs can be made to combine correct operation of the cryocooler on all the ambient operational range and maximum efficiency of the cryocooler. These trade-offs and the impact on MTTF of elevated cold regulation temperature will be presented and discussed. In correlation with the increase of the cold operation temperature, the cryocooler input power is significantly decreased. As a consequence, the cooler drive electronics own consumption becomes relatively important and must be reduced in order to minimize global input power to the cooling function (cryocooler and cooler drive electronics). Thales Cryogenics has developed a new drive electronics optimized for low input power requirements. In parallel, improvements on RM1 and RM2 cryocoolers have been defined and implemented. The main impacts on performances of these new designs will be presented. Thales cryogenics is now able to propose an efficient cooling function for application requiring a high cold regulation temperature including a range of tuned rotary coolers.

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailova, M. P.; Ivanov, E. V.; Danilov, L. V.

2014-06-14

We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electronmore » level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.« less

Influence of carrier density on the electronic cooling channels of bilayer graphene

NASA Astrophysics Data System (ADS)

Limmer, T.; Houtepen, A. J.; Niggebaum, A.; Tautz, R.; Da Como, E.

2011-09-01

We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25-1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons and holes. Two regimes of carrier cooling, dominated by optical and acoustic phonons emission, are clearly identified. For increasing carrier density, the crossover between the two regimes occurs at larger carrier temperatures, since cooling via optical phonons experiences a bottleneck. Acoustic phonons, which are less sensitive to saturation, show an increasing contribution at high density.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

Changes to Electrical Conductivity in Irradiated Carbon-Nickel Nanocomposites

DTIC Science & Technology

2010-03-01

fluxes that geosynchronous satellites must withstand as established by MIL-STD-1809... Voltage keV Kilo Electron Volt [10 3 eV] LSU Louisiana State University LTAPCVD Low Temperature Atmospheric Pressure Chemical Vapor Decomposition...geosynchronous altitude energetic electron fluxes range up to 5 x 10 6 cm -2 sec -1 for electrons with energies 2 of 0.5 MeV or greater, while proton

Generalized Lenard-Balescu calculations of electron-ion temperature relaxation in beryllium plasma.

PubMed

Fu, Zhen-Guo; Wang, Zhigang; Li, Da-Fang; Kang, Wei; Zhang, Ping

2015-09-01

The problem of electron-ion temperature relaxation in beryllium plasma at various densities (0.185-18.5g/cm^{3}) and temperatures [(1.0-8)×10^{3} eV] is investigated by using the generalized Lenard-Balescu theory. We consider the correlation effects between electrons and ions via classical and quantum static local field corrections. The numerical results show that the electron-ion pair distribution function at the origin approaches the maximum when the electron-electron coupling parameter equals unity. The classical result of the Coulomb logarithm is in agreement with the quantum result in both the weak (Γ_{ee}<10^{-2}) and strong (Γ_{ee}>1) electron-electron coupling ranges, whereas it deviates from the quantum result at intermediate values of the coupling parameter (10^{-2}<Γ_{ee}<1). We find that with increasing density of Be, the Coulomb logarithm will decrease and the corresponding relaxation rate ν_{ie} will increase. In addition, a simple fitting law ν_{ie}/ν_{ie}^{(0)}=a(ρ_{Be}/ρ_{0})^{b} is determined, where ν_{ie}^{(0)} is the relaxation rate corresponding to the normal metal density of Be and ρ_{0}, a, and b are the fitting parameters related to the temperature and the degree of ionization 〈Z〉 of the system. Our results are expected to be useful for future inertial confinement fusion experiments involving Be plasma.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sicupira, Felipe Lucas; Sandim, Maria José R.; Sandim, Hugo R.Z.

The good performance of supermartensitic stainless steels is strongly dependent on the volume fraction of retained austenite at room temperature. The present work investigates the effect of secondary tempering temperatures on this phase transformation and quantifies the amount of retained austenite by X-ray diffraction and saturation magnetization. The steel samples were tempered for 1 h within a temperature range of 600–800 °C. The microstructure was characterized using scanning electron microscopy and electron backscatter diffraction. Results show that the amount of retained austenite decreased with increasing secondary tempering temperature in both quantification methods. - Highlights: • The phase transformation during secondarymore » tempering temperatures was observed. • Phases were quantified by X-ray diffraction and DC-saturation magnetization. • More retained austenite forms with increasing secondary tempering temperature. • The retained austenite is mainly located at the grain and lath boundaries.« less

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

NASA Astrophysics Data System (ADS)

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

2015-01-01

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage "hot spots" at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7-0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

Electron trapping and transport by supersonic solitons in one-dimensional systems

NASA Technical Reports Server (NTRS)

Zmuidzinas, J. S.

1978-01-01

A one-dimensional chain of ions or molecules and electrons described by a Froehlich-type Hamiltonian with quartic phonon anharmonicities is investigated. It is shown that the anharmonic lattice supports supersonic solitons which under favorable circumstances may trap electrons and transport them along the lattice. For a lattice constant/soliton spatial extent quotient of the order of 0.1, rough estimates give electron trapping energies in the meV range. They imply a useful temperature range, up to tens of degrees K, for observing the new effect. The activation energy of a lattice soliton is proportional to the molecular mass and is therefore quite high (about 1 eV) for typical quasi-one-dimensional organic systems.

Towards a Quantitative Analysis of the Temperature Dependence of Electron Attachment Processes

DTIC Science & Technology

2016-06-24

from an Arrhenius law should become pronounced when the temperature range would be extended considerably. Such experiments then were done as reported...in Ref. 13. Indeed marked deviations from the Arrhenius law became visible and, in addition, very good agreement with predictions from our “kinetic

Langmuir probe diagnostics of an atmospheric pressure, vortex-stabilized nitrogen plasma jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prevosto, L.; Mancinelli, B. R.; Kelly, H.

Langmuir probe measurements in an atmospheric pressure direct current (dc) plasma jet are reported. Sweeping probes were used. The experiment was carried out using a dc non-transferred arc torch with a rod-type cathode and an anode of 5 mm diameter. The torch was operated at a nominal power level of 15 kW with a nitrogen flow rate of 25 Nl min{sup -1}. A flat ion saturation region was found in the current-voltage curve of the probe. The ion saturation current to a cylindrical probe in a high-pressure non local thermal equilibrium (LTE) plasma was modeled. Thermal effects and ionization/recombination processesmore » inside the probe perturbed region were taken into account. Averaged radial profiles of the electron and heavy particle temperatures as well as the electron density were obtained. An electron temperature around 11 000 K, a heavy particle temperature around 9500 K and an electron density of about 4 Multiplication-Sign 10{sup 22} m{sup -3}, were found at the jet centre at 3.5 mm downstream from the torch exit. Large deviations from kinetic equilibrium were found throughout the plasma jet. The electron and heavy particle temperature profiles showed good agreement with those reported in the literature by using spectroscopic techniques. It was also found that the temperature radial profile based on LTE was very close to that of the electrons. The calculations have shown that this method is particularly useful for studying spraying-type plasma jets characterized by electron temperatures in the range 9000-14 000 K.« less

Nonlocal Coulomb correlations in pure and electron-doped Sr2IrO4 : Spectral functions, Fermi surface, and pseudo-gap-like spectral weight distributions from oriented cluster dynamical mean-field theory

NASA Astrophysics Data System (ADS)

Martins, Cyril; Lenz, Benjamin; Perfetti, Luca; Brouet, Veronique; Bertran, François; Biermann, Silke

2018-03-01

We address the role of nonlocal Coulomb correlations and short-range magnetic fluctuations in the high-temperature phase of Sr2IrO4 within state-of-the-art spectroscopic and first-principles theoretical methods. Introducing an "oriented-cluster dynamical mean-field scheme", we compute momentum-resolved spectral functions, which we find to be in excellent agreement with angle-resolved photoemission spectra. We show that while short-range antiferromagnetic fluctuations are crucial to accounting for the electronic properties of Sr2IrO4 even in the high-temperature paramagnetic phase, long-range magnetic order is not a necessary ingredient of the insulating state. Upon doping, an exotic metallic state is generated, exhibiting cuprate-like pseudo-gap spectral properties, for which we propose a surprisingly simple theoretical mechanism.

Analysis of hydrogen plasma in MPCVD reactor

NASA Astrophysics Data System (ADS)

Shivkumar, Gayathri

The aim of this work is to build a numerical model that can predict the plasma properties of hydrogen plasmas inside a Seki Technotron Corp. AX5200S MPCVD system so that it may be used to understand and optimize the conditions for the growth of carbon nanostructures. A 2D model of the system is used in the finite element high frequency Maxwell solver and heat trasfer solver in COMSOL Multiphysics, where the solvers are coupled with user defined functions to analyze the plasma. A simplified chemistry model is formulated in order to determine the electron temperature in the plasma. This is used in the UDFs which calculate the electron number density as well as electron temperature. A Boltzmann equation solver for electrons in weakly ionized gases under uniform electric fields, called BOLSIG+, is used to obtain certain input parameters required for these UDFs. The system is modeled for several reactor geometries at pressures of 10 Torr and 30 Torr and powers ranging from 300 W to 700 W. The variation of plasma characteristics with changes in input conditions is studied and the electric field, electron number density, electron temperature and gas temperature are seen to increase with increasing power. Electric field, electron number density and electron temperature decrease and gas temperature increases with increasing pressure. The modeling results are compared with experimental measurements and a good agreement is found after calibrating the parameter gamma in Funer's model to match experimental electron number densities. The gas temperature is seen to have a weak dependence on power and a strong dependence on gas pressure. On an average, the gas temperature at a point 5 mm above the center of the puck increases from about 1000 K at a pressure of 10 Torr to about 1500 K at 30 Torr. The inclusion of the pillar produces an increase in the maximum electron number density of approximately 50%; it is higher under some conditions. It increases the maximum electron temperature by about 70% and at 500 W and 30 Torr, the maximum gas temperature is seen to increase by 50%. The effect of susceptor position is studied and it is seen that the only condition favorable to growth would be to raise it by less than 25 mm from the initial reference position or to maintain it at the same level.

Redirected charge transport arising from diazonium grafting of carbon coated LiFePO4.

PubMed

Madec, L; Seid, K A; Badot, J-C; Humbert, B; Moreau, P; Dubrunfaut, O; Lestriez, B; Guyomard, D; Gaubicher, J

2014-11-07

The morphological and the electrical properties of carbon coated LiFePO4 (LFPC) active material functionalized by 4-ethynylbenzene tetrafluoroboratediazonium salt were investigated. For this purpose, FTIR, Raman, XPS, High Resolution Transmission Electron Microscopy (HRTEM) and Broadband Dielectric Spectroscopy (BDS) were considered. Electronic conductivities of LFPC samples at room temperature were found to decrease in a large frequency range upon simple immersion in polar solvents and to decrease further upon functionalization. Due to their high dipole moment, strongly physisorbed molecules detected by XPS likely add barriers to electron hopping. Significant alteration of the carbon coating conductivity was only observed, however, upon functionalization. This effect is most presumably associated with an increase in the sp(3) content determined by Raman spectroscopy, which is a strong indication of the formation of a covalent bond between the organic layer and the carbon coating. In this case, the electron flux appears to be redirected and relayed by short-range (intra chain) and long-range (inter chain) electron transport through molecular oligomers anchored at the LFPC surface. The latter are controlled by tunnelling and slightly activated hopping, which enable higher conductivity at low temperature (T < 250 K). Alteration of the electron transport within the carbon coating also allows detection of a relaxation phenomenon that corresponds to small polaron hopping in bulk LiFePO4. XPS and HRTEM images allow a clear correlation of these findings with the island type oligomeric structure of grafted molecules.

Cryogenic Quenching Process for Electronic Part Screening

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.; Cressler, John

2011-01-01

The use of electronic parts at cryogenic temperatures (less than 100 C) for extreme environments is not well controlled or developed from a product quality and reliability point of view. This is in contrast to the very rigorous and well-documented procedures to qualify electronic parts for mission use in the 55 to 125 C temperature range. A similarly rigorous methodology for screening and evaluating electronic parts needs to be developed so that mission planners can expect the same level of high reliability performance for parts operated at cryogenic temperatures. A formal methodology for screening and qualifying electronic parts at cryogenic temperatures has been proposed. The methodology focuses on the base physics of failure of the devices at cryogenic temperatures. All electronic part reliability is based on the bathtub curve, high amounts of initial failures (infant mortals), a long period of normal use (random failures), and then an increasing number of failures (end of life). Unique to this is the development of custom screening procedures to eliminate early failures at cold temperatures. The ability to screen out defects will specifically impact reliability at cold temperatures. Cryogenic reliability is limited by electron trap creation in the oxide and defect sites at conductor interfaces. Non-uniform conduction processes due to process marginalities will be magnified at cryogenic temperatures. Carrier mobilities change by orders of magnitude at cryogenic temperatures, significantly enhancing the effects of electric field. Marginal contacts, impurities in oxides, and defects in conductor/conductor interfaces can all be magnified at low temperatures. The novelty is the use of an ultra-low temperature, short-duration quenching process for defect screening. The quenching process is designed to identify those defects that will precisely (and negatively) affect long-term, cryogenic part operation. This quenching process occurs at a temperature that is at least 25 C colder than the coldest expected operating temperature. This quenching process is the opposite of the standard burn-in procedure. Normal burn-in raises the temperature (and voltage) to activate quickly any possible manufacturing defects remaining in the device that were not already rejected at a functional test step. The proposed inverse burn-in or quenching process is custom-tailored to the electronic device being used. The doping profiles, materials, minimum dimensions, interfaces, and thermal expansion coefficients are all taken into account in determining the ramp rate, dwell time, and temperature.

Comparative shear tests of some low temperature lead-free solder pastes

NASA Astrophysics Data System (ADS)

Branzei, Mihai; Plotog, Ioan; Varzaru, Gaudentiu; Cucu, Traian C.

2016-12-01

The range of electronic components and as a consequence, all parts of automotive electronic equipment operating temperatures in a vehicle is given by the location of that equipment, so the maximum temperature can vary between 358K and 478K1. The solder joints could be defined as passive parts of the interconnection structure of automotive electronic equipment, at a different level, from boards of electronic modules to systems. The manufacturing costs reduction necessity and the RoHS EU Directive3, 7 consequences generate the trend to create new Low-Temperature Lead-Free (LTLF) solder pastes family9. In the paper, the mechanical strength of solder joints and samples having the same transversal section as resistor 1206 case type made using the same LTLF alloys into Vapour Phase Soldering (VPS) process characterized by different cooling rates (slow and rapid) and two types of test PCBs pads finish, were benchmarked at room temperature. The presented work extends the theoretical studies and experiments upon heat transfer in VPSP in order to optimize the technology for soldering process (SP) of automotive electronic modules and could be extended for home and modern agriculture appliances industry. The shear forces (SF) values of the LTLF alloy samples having the same transversal section as resistor 1206 case type will be considered as references values of a database useful in the new solder alloy creation processes and their qualification for automotive electronics domain.

The crossover between tunnel and hopping conductivity in granulated films of noble metals

NASA Astrophysics Data System (ADS)

Kavokin, Alexey; Kutrovskaya, Stella; Kucherik, Alexey; Osipov, Anton; Vartanyan, Tigran; Arakelyan, Sergey

2017-11-01

The conductivity of thin films composed by clusters of gold and silver nanoparticles has been studies in a wide range of temperatures. The switch from a temperature independence to an exponential thermal dependence of the conductivity manifests the crossover between the tunnel and thermally activated hopping regimes of the electronic transport at the temperature of 60 °C. The characteristic thermal activation energy that governs hopping of electrons between nanoparticles is estimated as 1.3 eV. We have achieved a good control of the composition and thicknesses of nano-cluster films by use of the laser ablation method in colloidal solutions.

Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kirubaharan, A. Kamalan; Kuppusami, P.; Singh, Akash; Dharini, T.; Ramachandran, D.; Mohandas, E.

2015-06-01

Yttria stabilized zirconia (10 mole % Y2O3) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 - 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ˜5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

Effect of quantum correction on nonlinear thermal wave of electrons driven by laser heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nafari, F.; Ghoranneviss, M., E-mail: ghoranneviss@gmail.com

2016-08-15

In thermal interaction of laser pulse with a deuterium-tritium (DT) plane, the thermal waves of electrons are generated instantly. Since the thermal conductivity of electron is a nonlinear function of temperature, a nonlinear heat conduction equation is used to investigate the propagation of waves in solid DT. This paper presents a self-similar analytic solution for the nonlinear heat conduction equation in a planar geometry. The thickness of the target material is finite in numerical computation, and it is assumed that the laser energy is deposited at a finite initial thickness at the initial time which results in a finite temperaturemore » for electrons at initial time. Since the required temperature range for solid DT ignition is higher than the critical temperature which equals 35.9 eV, the effects of quantum correction in thermal conductivity should be considered. This letter investigates the effects of quantum correction on characteristic features of nonlinear thermal wave, including temperature, penetration depth, velocity, heat flux, and heating and cooling domains. Although this effect increases electron temperature and thermal flux, penetration depth and propagation velocity are smaller. This effect is also applied to re-evaluate the side-on laser ignition of uncompressed DT.« less

Resolving an anomaly in electron temperature measurement using double and triple Langmuir probes

NASA Astrophysics Data System (ADS)

Ghosh, Soumen; Barada, K. K.; Chattopadhyay, P. K.; Ghosh, J.; Bora, D.

2015-02-01

Langmuir probes with variants such as single, double and triple probes remain the most common method of electron temperature measurement in low-temperature laboratory plasmas. However, proper estimation of electron temperature mainly using triple probe configuration requires the proper choice of compensation factor (W). Determination of the compensating factor is not very straightforward as it depends heavily on plasma floating potential (Vf), electron temperature (Te), the type of gas used for plasma production and the bias voltage applied to probe pins, especially in cases where there are substantial variations in floating potential. In this paper we highlight the anomaly in electron temperature measurement using double and triple Langmuir probe techniques as well as the proper determination of the compensation factor (W) to overcome this anomaly. Experiments are carried out with helicon antenna producing inductive radiofrequency plasmas, where significant variation of floating potential along the axis enables a detailed study of deviations introduced in Te measurements using triple probes compared to double and single probes. It is observed that the bias voltage between the probe pins of the triple probes plays an important role in the accurate determination of the compensating factor (W) and should be in the range (5Vd2 < Vd3 < 10Vd2), where Vd2 and Vd3 are the voltage between floating probe pins 2 and 1 and the bias voltage, respectively.

Long-range energy transport in single supramolecular nanofibres at room temperature

NASA Astrophysics Data System (ADS)

Haedler, Andreas T.; Kreger, Klaus; Issac, Abey; Wittmann, Bernd; Kivala, Milan; Hammer, Natalie; Köhler, Jürgen; Schmidt, Hans-Werner; Hildner, Richard

2015-07-01

Efficient transport of excitation energy over long distances is a key process in light-harvesting systems, as well as in molecular electronics. However, in synthetic disordered organic materials, the exciton diffusion length is typically only around 10 nanometres (refs 4, 5), or about 50 nanometres in exceptional cases, a distance that is largely determined by the probability laws of incoherent exciton hopping. Only for highly ordered organic systems has the transport of excitation energy over macroscopic distances been reported--for example, for triplet excitons in anthracene single crystals at room temperature, as well as along single polydiacetylene chains embedded in their monomer crystalline matrix at cryogenic temperatures (at 10 kelvin, or -263 degrees Celsius). For supramolecular nanostructures, uniaxial long-range transport has not been demonstrated at room temperature. Here we show that individual self-assembled nanofibres with molecular-scale diameter efficiently transport singlet excitons at ambient conditions over more than four micrometres, a distance that is limited only by the fibre length. Our data suggest that this remarkable long-range transport is predominantly coherent. Such coherent long-range transport is achieved by one-dimensional self-assembly of supramolecular building blocks, based on carbonyl-bridged triarylamines, into well defined H-type aggregates (in which individual monomers are aligned cofacially) with substantial electronic interactions. These findings may facilitate the development of organic nanophotonic devices and quantum information technology.

Optical properties of nanocrystalline Y2O3 thin films grown on quartz substrates by electron beam deposition

NASA Astrophysics Data System (ADS)

Wiktorczyk, Tadeusz; Biegański, Piotr; Serafińczuk, Jarosław

2016-09-01

Yttrium oxide thin films of a thickness 221-341 nm were formed onto quartz substrates by reactive physical vapor deposition in an oxygen atmosphere. An electron beam gun was applied as a deposition source. The effect of substrate temperature during film deposition (in the range of 323-673 K) on film structure, surface morphology and optical properties was investigated. The surface morphology studies (with atomic force microscopy and diffuse spectra reflectivity) show that the film surface was relatively smooth with RMS surface roughness in the range of 1.7-3.8 nm. XRD analysis has revealed that all diffraction lines belong to a cubic Y2O3 structure. The films consisted of small nanocrystals. Their average grain size increases from 1.6 nm to 22 nm, with substrate temperature rising from 323 K to 673 K. Optical examinations of transmittance and reflectance were performed in the spectral range of 0.2-2.5 μm. Optical constants and their dispersion curves were determined. Values of the refractive index of the films were in the range of n = 1.79-1.90 (at 0.55 μm) for substrate temperature during film deposition of 323-673 K. The changes in the refractive index upon substrate temperature correspond very well with the increase in the nanocrystals grain diameter and with film porosity.

Long range order and two-fluid behavior in heavy electron materials

DOE PAGES

Shirer, Kent R.; Shockley, Abigail C.; Dioguardi, Adam P.; ...

2012-09-24

The heavy electron Kondo liquid is an emergent state of condensed matter that displays universal behavior independent of material details. Properties of the heavy electron liquid are best probed by NMR Knight shift measurements, which provide a direct measure of the behavior of the heavy electron liquid that emerges below the Kondo lattice coherence temperature as the lattice of local moments hybridizes with the background conduction electrons. Because the transfer of spectral weight between the localized and itinerant electronic degrees of freedom is gradual, the Kondo liquid typically coexists with the local moment component until the material orders at lowmore » temperatures. The two-fluid formula captures this behavior in a broad range of materials in the paramagnetic state. In order to investigate two-fluid behavior and the onset and physical origin of different long range ordered ground states in heavy electron materials, we have extended Knight shift measurements to URu 2Si 2, CeIrIn 5, and CeRhIn 5. In CeRhIn 5 we find that the antiferromagnetic order is preceded by a relocalization of the Kondo liquid, providing independent evidence for a local moment origin of antiferromagnetism. In URu 2Si 2 the hidden order is shown to emerge directly from the Kondo liquid and so is not associated with local moment physics. Lastly, our results imply that the nature of the ground state is strongly coupled with the hybridization in the Kondo lattice in agreement with phase diagram proposed by Yang and Pines.« less

Electron-spin-resonance studies of vapor-grown carbon fibers

NASA Technical Reports Server (NTRS)

Marshik, B.; Meyer, D.; Apple, T.

1987-01-01

The effects of annealing temperature and fiber diameter on the degree of disorder of vapor-grown carbon fibers were investigated by analyzing the electron-spin-resonance (ESR) line shapes of fibers annealed at six various temperatures up to 3375 K. The diameter of fibers, grown from methane gas, ranged from 10 to 140 microns with most fibers between 20 and 50 microns. It was found that the degree of disorder of vapor-grown fibers decreases upon annealing to higher temperature; standard angular deviation between the fiber axis and the crystallite basal planes could vary from 35 deg (for annealing temperature of 2275 K) to 12 deg (for 3375 K). With respect to fiber diameter, order parameters were found to be higher for fibers of smaller diameters.

An alternative estimation of the RF-enhanced plasma temperature during SPEAR artificial heating experiments: Early results

NASA Astrophysics Data System (ADS)

Vickers, H.; Baddeley, L.

2011-11-01

RF heating of the F region plasma at high latitudes has long been known to produce electron temperature increases that can vary from tens to hundreds of percent above the background, unperturbed level. In contrast, artificial ionospheric modification experiments conducted using the Space Plasma Exploration by Active Radar (SPEAR) heating facility on Svalbard have often failed to produce obvious enhancements in the electron temperatures when measured using the European Incoherent Scatter Svalbard radar (ESR), colocated with the heater. Contamination of the ESR ion line spectra by the zero-frequency purely growing mode (PGM) feature is known to persist at varying amplitudes throughout SPEAR heating, and such spectral features can lead to significant temperature underestimations when the incoherent scatter spectra are analyzed using conventional methods. In this study, we present the first results of applying a recently developed technique to correct the PGM-contaminated spectra to SPEAR-enhanced ESR spectra and derive an alternative estimate of the SPEAR-heated electron temperature. We discuss how the effectiveness of the spectrum corrections can be affected by the data variance, estimated over the integration period. The subsequent electron temperatures, inferred from corrected spectra, range from a few tens to a few hundred Kelvin above the average background temperature. These temperatures are found to be in reasonable agreement with the theoretical “enhanced” temperature, calculated for the peak of the stationary temperature perturbation profile, when realistic absorption effects are accounted for.

Nanosecond laser-cluster interactions at 109-1012 W/cm 2

NASA Astrophysics Data System (ADS)

Singh, Rohtash; Tripathi, V. K.; Vatsa, R. K.; Das, D.

2017-08-01

An analytical model and a numerical code are developed to study the evolution of multiple charge states of ions by irradiating clusters of atoms of a high atomic number (e.g., Xe) by 1.06 μm and 0.53 μm nanosecond laser pulses of an intensity in the range of 109-1012 W/cm 2 . The laser turns clusters into plasma nanoballs. Initially, the momentum randomizing collisions of electrons are with neutrals, but soon these are taken over by collisions with ions. The ionization of an ion to the next higher state of ionization is taken to be caused by an energetic free electron impact, and the rates of impact ionization are suitably modelled by having an inverse exponential dependence of ionizing collision frequency on the ratio of ionization potential to electron temperature. Cluster expansion led adiabatic cooling is a major limiting mechanism on electron temperature. In the intensity range considered, ionization states up to 7 are expected with nanosecond pulses. Another possible mechanism, filamentation of the laser, has also been considered to account for the observation of higher charged states. However, filamentation is seen to be insufficient to cause substantial local enhancement in the intensity to affect electron heating rates.

Vitrification of waste

DOEpatents

Wicks, G.G.

1999-04-06

A method is described for encapsulating and immobilizing waste for disposal. Waste, preferably, biologically, chemically and radioactively hazardous, and especially electronic wastes, such as circuit boards, are placed in a crucible and heated by microwaves to a temperature in the range of approximately 300 C to 800 C to incinerate organic materials, then heated further to a temperature in the range of approximately 1100 C to 1400 C at which temperature glass formers present in the waste will cause it to vitrify. Glass formers, such as borosilicate glass, quartz or fiberglass can be added at the start of the process to increase the silicate concentration sufficiently for vitrification.

Trichite growth during oxidation of titanium and TA6V4 alloy by water vapor at high temperatures

NASA Technical Reports Server (NTRS)

Coddet, C.; Motte, F.; Sarrazin, P.

1982-01-01

Analysis by electron scanning microscope detected the formation of rutile trichites on the surface of specimens of titanium and titanium alloy TA6V4 oxidized in water vapor in the temperature range 650 to 950 C and the water vapor pressure range from 0.5 to 18 torr. In all specimens, two sublayers of rutile were formed: an external layer of basalt-like appearance, and a microcrystalline inner layer. Morphology of the trichites depends on temperature and the material (whether metal or alloy), but not on vapor pressure.

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

PubMed

Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

2018-02-28

In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

Ultracompliant Heterogeneous Copper-Tin Nanowire Arrays Making a Supersolder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narumanchi, Sreekant V; Feng, Xuhui; Major, Joshua

Due to the substantial increase in power density, thermal interface resistance that can constitute more than 50% of the total thermal resistance has generally become a bottleneck for thermal management in electronics. However, conventional thermal interface materials (TIMs) such as solder, epoxy, gel, and grease cannot fulfill the requirements of electronics for high-power and long-term operation. Here, we demonstrate a high-performance TIM consisting of a heterogeneous copper-tin nanowire array, which we term 'supersolder' to emulate the role of conventional solders in bonding various surfaces. The supersolder is ultracompliant with a shear modulus 2-3 orders of magnitude lower than traditional soldersmore » and can reduce the thermal resistance by two times as compared with the state-of-the-art TIMs. This supersolder also exhibits excellent long-term reliability with >1200 thermal cycles over a wide temperature range. By resolving this critical thermal bottleneck, the supersolder enables electronic systems, ranging from microelectronics and portable electronics to massive data centers, to operate at lower temperatures with higher power density and reliability.« less

Observations of low-energy electrons upstream of the earth's bow shock

NASA Technical Reports Server (NTRS)

Reasoner, D. L.

1974-01-01

Observations of electron fluxes with a lunar-based electron spectrometer when the moon was upstream of the earth have shown that a subset of observed fluxes are strongly controlled by the interplanetary magnetic field direction. The fluxes occur only when the IMF lines connect back to the earth's bow shock. Observed densities and temperatures were in the ranges 2-4 x 0,001/cu cm and 1.7-2.8 x 1,000,000 K. It is shown that these electrons can account for increases in effective solar wind electron temperatures on bow-shock connected field lines which have been observed previously by other investigators. It is further shown that if a model of the bow shock with an electrostatic potential barrier is assumed, the potential can be estimated to be 500 volts.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salili, S.M.; School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran; Ataie, A., E-mail: aataie@ut.ac.ir

This research aimed to synthesize nanostructured strontium-doped lanthanum manganite, La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSMO), with its Curie temperature (T{sub c}) adjusted to the therapeutic range, through a mechanothermal route. In order to investigate the effect of heat treatment temperature and duration on the resulting crystallite size, morphology, magnetic behavior and Curie temperature, the starting powder mixture was milled in a planetary ball mill before being subsequently heat treated at distinct temperatures for different time lengths. The composition, morphology, and magnetic behavior were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopymore » (HRTEM), selected area electron diffraction (SAED) and vibrating sample magnetometer (VSM). In addition, magnetic properties were further investigated using an alternating current (AC) susceptometer and thermo-magnetic analyzer. 20 h of milling produced a crystallite size reduction leading to a decrease in the heat treatment temperature of LSMO synthesis to 800 °C. Moreover, SEM analysis has shown the morphology of a strong agglomeration of fine nanoparticles. HRTEM showed clear lattice fringes of high crystallinity. The mean crystallite and particle size of 20-hour milled sample heat treated at 1100 °C for 10 h are relatively 69 and 100 nm, respectively. The VSM data at room temperature, indicated a paramagnetic behavior for samples heat treated at 800 °C. However, by increasing heat treatment temperature to 1100 °C, LSMO indicates a ferromagnetic behavior with well-adjusted Curie temperature of 320 K, suitable for hyperthermia applications. Also, reentrant spin glass (RSG) behavior has been found in heat treated samples. The particles are coated with (3-aminopropyl) triethoxysilane (APTES) for biocompatibility purposes; Fourier transform infrared spectroscopy (FTIR) and thermo-gravimetric analysis (TGA) are used for further confirmation of APTES coating. - Highlights: • La{sub 0.8}Sr{sub 0.2}MnO{sub 3} nanoparticles were synthesized via a mechanothermal route. • We report a significant reduction in the heat treatment temperature. • The Curie temperature was tuned within the therapeutic range. • The particles were coated with (3-aminopropyl) triethoxysilane for biocompatibility purposes.« less

Electron Temperature Gradient Scale Measurements in ICRF Heated Plasmas at Alcator C-Mod

NASA Astrophysics Data System (ADS)

Houshmandyar, Saeid; Phillips, Perry E.; Rowan, William L.; Howard, Nathaniel T.; Greenwald, Martin

2016-10-01

It is generally believed that the temperature gradient is a driving mechanism for the turbulent transport in hot and magnetically confined plasmas. A feature of many anomalous transport models is the critical threshold value (LC) for the gradient scale length, above which both the turbulence and the heat transport increases. This threshold is also predicted by the recent multi-scale gyrokinetic simulations, which are focused on addressing the electron (and ion) heat transport in tokamaks. Recently, we have established an accurate technique (BT-jog) to directly measure the electron temperature gradient scale length (LTe =Te / ∇T) profile, using a high-spatial resolution radiometer-based electron cyclotron emission (ECE) diagnostic. For the work presented here, electrons are heated by ion cyclotron range of frequencies (ICRF) through minority heating in L-mode plasmas at different power levels, TRANSP runs determine the electron heat fluxes and the scale lengths are measured through the BT-jog technique. Furthermore, the experiment is extended for different plasma current and electron densities by which the parametric dependence of LC on magnetic shear, safety factor and density will be investigated. This work is supported by U.S. DoE OFES, under Award No. DE-FG03-96ER-54373.

Studies of the oxidized Cu(100) surface using positron annihilation induced Auger electron spectroscopy

NASA Astrophysics Data System (ADS)

Maddox, W.; Fazleev, N. G.; Nadesalingam, M. P.; Weiss, A. H.

2008-03-01

We discuss recent progress in studies of an oxidized Cu(100) single crystal subjected to vacuum annealing over a temperature range from 293K to 1073K using positron annihilation induced Auger electron spectroscopy (PAES). The PAES measurements show a large monotonic increase in the intensity of the positron annihilation induced Cu M2,3 VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 573 K. The intensity then decreases monotonically as the annealing temperature is increased to 873 K. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption and surface reconstruction on localization of positron surface state wave functions and annihilation characteristics are analyzed. Possible explanations are provided for the observed behavior of the intensity of positron annihilation induced Cu M2,3VV Auger peak with changes of the annealing temperature.

Kinetic and radiative power from optically thin accretion flows

NASA Astrophysics Data System (ADS)

Sądowski, Aleksander; Gaspari, Massimo

2017-06-01

We perform a set of general relativistic, radiative, magneto-hydrodynamical simulations (GR-RMHD) to study the transition from radiatively inefficient to efficient state of accretion on a non-rotating black hole. We study ion to electron temperature ratios ranging from TI/Te = 10 to 100, and simulate flows corresponding to accretion rates as low as 10^{-6}\\dot{M}_Edd, and as high as 10^{-2}\\dot{M}_Edd. We have found that the radiative output of accretion flows increases with accretion rate, and that the transition occurs earlier for hotter electrons (lower TI/Te ratio). At the same time, the mechanical efficiency hardly changes and accounts to ≈3 per cent of the accreted rest mass energy flux, even at the highest simulated accretion rates. This is particularly important for the mechanical active galactic nuclei (AGN) feedback regulating massive galaxies, groups and clusters. Comparison with recent observations of radiative and mechanical AGN luminosities suggests that the ion to electron temperature ratio in the inner, collisionless accretion flow should fall within 10 < TI/Te < 30, I.e. the electron temperature should be several percent of the ion temperature.

Electron attachment to the SF{sub 6} molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smirnov, B. M., E-mail: bmsmirnov@gmail.com; Kosarim, A. V.

Various models for transition between electron and nuclear subsystems are compared in the case of electron attachment to the SF{sub 6} molecule. Experimental data, including the cross section of electron attachment to this molecule as a function of the electron energy and vibrational temperature, the rate constants of this process in swarm experiments, and the rates of the chemionization process involving Rydberg atoms and the SF{sub 6} molecule, are collected and treated. Based on the data and on the resonant character of electron capture into an autodetachment ion state in accordance with the Breit–Wigner formula, we find that intersection ofmore » the molecule and negative ion electron terms proceeds above the potential well bottom of the molecule with the barrier height 0.05–0.1 eV, and the transition between these electron terms has both the tunnel and abovebarrier character. The limit of small electron energies e for the electron attachment cross section at room vibrational temperature takes place at ε ≪ 2 meV, while in the range 2 meV ≪ ε ≪ 80 meV, the cross section is inversely proportional to ε. In considering the attachment process as a result of the interaction between the electron and vibrational degrees of freedom, we find the coupling factor f between them to be f = aT at low vibrational temperatures T with a ≈ 3 × 10{sup −4} K{sup −1}. The coupling factor is independent of the temperature at T > 400 K.« less

Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms

PubMed Central

Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

2016-01-01

Single–layer and mono–component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large–scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230–300 °C and 400–600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X–ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n–type doping behavior, whereas the PG showed a weak n–type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1–340 cm2 V−1·s−1 and 59.3–160.6 cm2 V−1·s−1, respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron–hole transport characteristic, indicating that the long–range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping. PMID:27325386

Electronegative plasma diagnostic by laser photo-detachment combined with negatively biased Langmuir probe

NASA Astrophysics Data System (ADS)

Oudini, N.; Sirse, N.; Taccogna, F.; Ellingboe, A. R.; Bendib, A.

2018-05-01

We propose a new technique for diagnosing negative ion properties using Langmuir probe assisted pulsed laser photo-detachment. While the classical technique uses a laser pulse to convert negative ions into electron-atom pairs and a positively biased Langmuir probe tracking the change of electron saturation current, the proposed method uses a negatively biased Langmuir probe to track the temporal evolution of positive ion current. The negative bias aims to avoid the parasitic electron current inherent to probe tip surface ablation. In this work, we show through analytical and numerical approaches that, by knowing electron temperature and performing photo-detachment at two different laser wavelengths, it is possible to deduce plasma electronegativity (ratio of negative ion to electron densities) α, and anisothermicity (ratio of electron to negative ion temperatures) γ-. We present an analytical model that links the change in the collected positive ion current to plasma electronegativity and anisothermicity. Particle-In-Cell simulation is used as a numerical experiment covering a wide range of α and γ- to test the new analysis technique. The new technique is sensitive to α in the range 0.5 < α < 10 and yields γ- for large α, where negative ion flux affects the probe sheath behavior, typically α > 1.

Comprehensive stabilization mechanism of electron-beam irradiated polyacrylonitrile fibers to shorten the conventional thermal treatment

PubMed Central

Park, Sejoon; Yoo, Seung Hwa; Kang, Ha Ri; Jo, Seong Mu; Joh, Han-Ik; Lee, Sungho

2016-01-01

An electron beam was irradiated on polyacrylonitrile (PAN) fibers prior to thermal stabilization. The electron-beam irradiation effectively shortened the thermal stabilization process by one fourth compared with the conventional thermal stabilization process. A comprehensive mechanistic study was conducted regarding this shortening of the thermal stabilization by electron-beam irradiation. Various species of chain radicals were produced in PAN fibers by electron-beam irradiation and existed for a relatively long duration, as observed by electron spin resonance spectroscopy. Subsequently, these radicals were gradually oxidized to peroxy radicals in the presence of oxygen under storage or heating. We found that these peroxy radicals (CO) enabled such an effective shortcut of thermal stabilization by acting as intermolecular cross-linking and partial aromatization points in the low temperature range (100–130 °C) and as earlier initiation seeds of successive cyclization reactions in the next temperature range (>130–140 °C) of thermal stabilization. Finally, even at a low irradiation dose (200 kGy), followed by a short heat treatment (230 °C for 30 min), the PAN fibers were sufficiently stabilized to produce carbon fibers with tensile strength and modulus of 2.3 and 216 GPa, respectively, after carbonization. PMID:27349719

[Research on the identification method of LTE condition in the laser-induced plasma].

PubMed

Fan, Juan-juan; Huang, Dan; Wang, Xin; Zhang, Lei; Ma, Wei-guang; Dong, Lei; Yin, Wang-bao; Jia, Suo-tang

2014-12-01

Because of the poor accuracy of the commonly used Boltzmann plot method and double-line method, the Boltzmann-Maxwell distribution combined with the Saha-Eggert formula is proposed to improve the measurement accuracy of the plasma temperature; the simple algorithm for determining the linewidth of the emission line was established according to the relationship between the area and the peak value of the Gaussian formula, and the plasma electron density was calculated through the Stark broadening of the spectral lines; the method for identifying the plasma local thermal equilibrium (LTE) condition was established based on the McWhirter criterion. The experimental results show that with the increase in laser energy, the plasma temperature and electron density increase linearly; when the laser energy changes within 127~510 mJ, the plasma electron density changes in the range of 1.30532X10(17)~1.87322X10(17) cm(-3), the plasma temperature changes in the range of 12586~12957 K, and all the plasma generated in this experiment meets the LTE condition threshold according to the McWhirter criterion. For element Al, there exist relatively few observable lines at the same ionization state in the spectral region of the spectrometer, thus it is unable to use the Boltzmann plane method to calculate temperature. One hundred sets of Al plasma spectra were used for temperature measurement by employing the Saha-Boltzmann method and the relative standard deviation (RSD) value is 0.4%, and compared with 1.3% of the double line method, the accuracy has been substantially increased. The methods proposed can be used for rapid plasma temperature and electron density calculation, the LTE condition identification, and are valuable in studies such as free calibration, spectral effectiveness analysis, spectral temperature correction, the best collection location determination, LTE condition distribution in plasma, and so on.

Temperature dependence of electron impact ionization coefficient in bulk silicon

NASA Astrophysics Data System (ADS)

Ahmed, Mowfaq Jalil

2017-09-01

This work exhibits a modified procedure to compute the electron impact ionization coefficient of silicon for temperatures between 77 and 800K and electric fields ranging from 70 to 400 kV/cm. The ionization coefficients are computed from the electron momentum distribution function through solving the Boltzmann transport equation (BTE). The arrangement is acquired by joining Legendre polynomial extension with BTE. The resulting BTE is solved by differences-differential method using MATLAB®. Six (X) equivalent ellipsoidal and non-parabolic valleys of the conduction band of silicon are taken into account. Concerning the scattering mechanisms, the interval acoustic scattering, non-polar optical scattering and II scattering are taken into consideration. This investigation showed that the ionization coefficients decrease with increasing temperature. The overall results are in good agreement with previous experimental and theoretical reported data predominantly at high electric fields.

Relevance of 4f-3d exchange to finite-temperature magnetism of rare-earth permanent magnets: An ab-initio-based spin model approach for NdFe{sub 12}N

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumoto, Munehisa; Akai, Hisazumi; Doi, Shotaro

2016-06-07

A classical spin model derived ab initio for rare-earth-based permanent magnet compounds is presented. Our target compound, NdFe{sub 12}N, is a material that goes beyond today's champion magnet compound Nd{sub 2}Fe{sub 14}B in its intrinsic magnetic properties with a simpler crystal structure. Calculated temperature dependence of the magnetization and the anisotropy field agrees with the latest experimental results in the leading order. Having put the realistic observables under our numerical control, we propose that engineering 5d-electron-mediated indirect exchange coupling between 4f-electrons in Nd and 3d-electrons from Fe would most critically help enhance the material's utility over the operation-temperature range.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert; Bennion, Kevin

This project will develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter designs). The use of WBG-based devices in automotive power electronics will improve efficiency and increase driving range in electric-drive vehicles; however, the implementation of this technology is limited, in part, due to thermal issues. This project will develop system-level thermal models to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components.more » WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.« less

Dynamics of 4-oxo-TEMPO-d16-15N nitroxide-propylene glycol system studied by ESR and ESE in liquid and glassy state in temperature range 10-295 K

NASA Astrophysics Data System (ADS)

Goslar, Janina; Hoffmann, Stanislaw K.; Lijewski, Stefan

2016-08-01

ESR spectra and electron spin relaxation of nitroxide radical in 4-oxo-TEMPO-d16-15N in propylene glycol were studied at X-band in the temperature range 10-295 K. The spin-lattice relaxation in the liquid viscous state determined from the resonance line shape is governed by three mechanisms occurring during isotropic molecular reorientations. In the glassy state below 200 K the spin-lattice relaxation, phase relaxation and electron spin echo envelope modulations (ESEEM) were studied by pulse spin echo technique using 2-pulse and 3-pulse induced signals. Electron spin-lattice relaxation is governed by a single non-phonon relaxation process produced by localized oscillators of energy 76 cm-1. Electron spin dephasing is dominated by a molecular motion producing a resonance-type peak in the temperature dependence of the dephasing rate around 120 K. The origin of the peak is discussed and a simple method for the peak shape analysis is proposed, which gives the activation energy of a thermally activated motion Ea = 7.8 kJ/mol and correlation time τ0 = 10-8 s. The spin echo amplitude is strongly modulated and FT spectrum contains a doublet of lines centered around the 2D nuclei Zeeman frequency. The splitting into the doublet is discussed as due to a weak hyperfine coupling of nitroxide unpaired electron with deuterium of reorienting CD3 groups.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding whitemore » emission.« less

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins.

PubMed

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-16

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O 3 ) microengineering technique. The UV/O 3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ∼ -0.101 ± 0.005 kPa -1 (<1 kPa), a fast response/relaxation speed of ∼10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O 3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

Investigation of guanosine-quartet assemblies by vibrational and electronic circular dichroism spectroscopy, a novel approach for studying supramolecular entities.

PubMed

Setnicka, Vladimír; Urbanová, Marie; Volka, Karel; Nampally, Sreenivasachary; Lehn, Jean-Marie

2006-11-24

The self-assembly of guanosine-5'-hydrazide G-1 in D(2)O, in the presence and absence of sodium cations, has been investigated by chiroptical techniques: electronic (ECD) and the newly introduced vibrational (VCD) circular dichroism spectroscopy. Using a combination of ECD and VCD with other methods such as IR, electron microscopy, and electrospray ionization mass spectrometry (ESI-MS) it was found that G-1 produces long-range chiral aggregates consisting of G-quartets, (G-1)(4), subsequently stacked into columns, [(G-1)(4)](n), induced by binding of metal cations between the (G-1)(4) species. This process, accompanied by gelation of the sample, is highly efficient in the presence of an excess of sodium cations, leading to aggregates with strong quartet-quartet interaction. Thermally induced conformational changes and conformational stability of guanosine-5'-hydrazide assemblies were studied by chiroptical techniques and the melting temperature of the hydrogels formed was obtained. The temperature-dependent experiments indicate that the long-range supramolecular aggregates are dissociated by increasing temperature into less ordered species, monomers, or other intermediates in equilibrium, as indicated by MS experiments.

A wearable pressure sensor based on ultra-violet/ozone microstructured carbon nanotube/polydimethylsiloxane arrays for electronic skins

NASA Astrophysics Data System (ADS)

Yu, Guohui; Hu, Jingdong; Tan, Jianping; Gao, Yang; Lu, Yongfeng; Xuan, Fuzhen

2018-03-01

Pressure sensors with high performance (e.g., a broad pressure sensing range, high sensitivities, rapid response/relaxation speeds, temperature-stable sensing), as well as a cost-effective and highly efficient fabrication method are highly desired for electronic skins. In this research, a high-performance pressure sensor based on microstructured carbon nanotube/polydimethylsiloxane arrays was fabricated using an ultra-violet/ozone (UV/O3) microengineering technique. The UV/O3 microengineering technique is controllable, cost-effective, and highly efficient since it is conducted at room temperature in an ambient environment. The pressure sensor offers a broad pressure sensing range (7 Pa-50 kPa), a sensitivity of ˜ -0.101 ± 0.005 kPa-1 (<1 kPa), a fast response/relaxation speed of ˜10 ms, a small dependence on temperature variation, and a good cycling stability (>5000 cycles), which is attributed to the UV/O3 engineered microstructures that amplify and transfer external applied forces and rapidly store/release the energy during the PDMS deformation. The sensors developed show the capability to detect external forces and monitor human health conditions, promising for the potential applications in electronic skin.

Reentrant Metal-Insulator Transitions in Silicon -

NASA Astrophysics Data System (ADS)

Campbell, John William M.

This thesis describes a study of reentrant metal -insulator transitions observed in the inversion layer of extremely high mobility Si-MOSFETs. Magneto-transport measurements were carried out in the temperature range 20mK-4.2 K in a ^3He/^4 He dilution refrigerator which was surrounded by a 15 Tesla superconducting magnet. Below a melting temperature (T_{M}~500 mK) and a critical electron density (n_{s }~9times10^{10} cm^{-2}), the Shubnikov -de Haas oscillations in the diagonal resistivity enormous maximum values at the half filled Landau levels while maintaining deep minima corresponding to the quantum Hall effect at filled Landau levels. At even lower electron densities the insulating regions began to spread and eventually a metal-insulator transition could be induced at zero magnetic field. The measurement of extremely large resistances in the milliKelvin temperature range required the use of very low currents (typically in the 10^ {-12} A range) and in certain measurements minimizing the noise was also a consideration. The improvements achieved in these areas through the use of shielding, optical decouplers and battery operated instruments are described. The transport signatures of the insulating state are considered in terms of two basic mechanisms: single particle localization with transport by variable range hopping and the formation of a collective state such as a pinned Wigner crystal or electron solid with transport through the motion of bound dislocation pairs. The experimental data is best described by the latter model. Thus the two dimensional electron system in these high mobility Si-MOSFETs provides the first and only experimental demonstration to date of the formation of an electron solid at zero and low magnetic fields in the quantum limit where the Coulomb interaction energy dominates over the zero point oscillation energy. The role of disorder in favouring either single particle localization or the formation of a Wigner crystal is explored by considering a variety of samples with a wide range of mobilities and by varying the ratio of the carrier density (controlled by the applied gate voltage) to the impurity density (fixed during sample growth). A phase diagram showing the boundaries between the two dimensional electron gas, the Wigner solid, and the single particle localization induced insulator is established in terms of carrier density and sample mobility.

Electron-phonon heat exchange in quasi-two-dimensional nanolayers

NASA Astrophysics Data System (ADS)

Anghel, Dragos-Victor; Cojocaru, Sergiu

2017-12-01

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film's surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron-phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (Te for the electrons temperature and Tph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, Te) or (d, Tph), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ Te3.5 - Tph3.5. From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.

Microstructures responsible for the invar and permalloy effects in Fe-Ni alloys

NASA Astrophysics Data System (ADS)

Ustinovshchikov, Yu. I.; Shabanova, I. N.; Lomova, N. V.

2015-05-01

The experimental studies of Fe68Ni32 and Fe23Ni77 alloys by transmission electron microscopy and X-ray electron spectroscopy show that the ordering-separation phase transition in these alloys occurs in a temperature range near 600°C. At temperatures higher than the transition temperature, the ordering energy of the alloy is positive, and the structures contain clusters enriched in one of the components. After heat treatment at the temperatures where the invar effect in the Fe68Ni32 alloy is maximal, a modulated microstructure forms. Below the transition temperature, the ordering energy is negative, which provides a tendency to formation of chemical compounds. After aging at these temperatures (where the Fe23Ni77 alloy exhibits high permalloy properties), highly dispersed completely coherent particles of the FeNi3 phase with structure L12 precipitate in a solid solution.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Huarui, E-mail: huarui.sun@bristol.ac.uk; Bajo, Miguel Montes; Uren, Michael J.

2015-01-26

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which ismore » consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.« less

Ionization competition effects on population distribution and radiative opacity of mixture plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yongjun; Gao, Cheng; Tian, Qinyun

2015-11-15

Ionization competition arising from the electronic shell structures of various atomic species in the mixture plasmas was investigated, taking SiO{sub 2} as an example. Using a detailed-level-accounting approximation, we studied the competition effects on the charge state population distribution and spectrally resolved and Planck and Rosseland mean radiative opacities of mixture plasmas. A set of coupled equations for ionization equilibria that include all components of the mixture plasmas are solved to determine the population distributions. For a given plasma density, competition effects are found at three distinct temperature ranges, corresponding to the ionization of M-, L-, and K-shell electrons ofmore » Si. Taking the effects into account, the spectrally resolved and Planck and Rosseland mean opacities are systematically investigated over a wide range of plasma densities and temperatures. For a given mass density, the Rosseland mean decreases monotonically with plasma temperature, whereas Planck mean does not. Although the overall trend is a decrease, the Planck mean increases over a finite intermediate temperature regime. A comparison with the available experimental and theoretical results is made.« less

Electron exchange between r-keggin tungstoaluminates and a well-defined cluster-anion probe for studies in electron transfer

Treesearch

Yurii V. Geletii; Craig L. Hill; Alan J. Bailey; Kenneth I. Hardcastle; Rajai H. Atalla; Ira A. Weinstock

2005-01-01

Fully oxidized [alpha]-AlIIIW12O405-(1ox), and one-electron-reduced [alpha]-AlIIIW12O406-(1red), are well-behaved (stable and free of ion pairing) over a wide range of pH and ionic-strength values at room temperature in water. Having established this, 27Al NMR spectroscopy is used to measure rates of electron exchange between 1ox (27Al NMR: 72.2 ppm relative to Al(H2O)...

Influence of electron irradiation on the structural and thermal properties of silk fibroin films

NASA Astrophysics Data System (ADS)

Asha, S.; Sangappa, Sanjeev, Ganesh

2015-06-01

Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

Adaptive amplifier for probe diagnostics of charged-particle temperature in the upper atmosphere

NASA Astrophysics Data System (ADS)

Chkalov, V. G.

An amplifier for probe experiments in the upper atmosphere is described which is based on a linear current-voltage converter design. Specifically, the amplifier is used as the input unit in a rocket-borne ionospheric probe for the measurement of electron temperature. The range of measured currents is from 10 to the -10th to 10 to the -6th A; the amplifier current range can be shifted up or down depending on the requirements of the experiment.

Temperature-induced Lifshitz transition in WTe 2

DOE PAGES

Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; ...

2015-10-12

In this study, we use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe 2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X–Γ–X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160 K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potentialmore » μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175 K and a breakdown of Kohler’s rule in the 70–140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.« less

Design and first plasma measurements of the ITER-ECE prototype radiometer.

PubMed

Austin, M E; Brookman, M W; Rowan, W L; Danani, S; Bryerton, E W; Dougherty, P

2016-11-01

On ITER, second harmonic optically thick electron cyclotron emission (ECE) in the range of 220-340 GHz will supply the electron temperature (T e ). To investigate the requirements and capabilities prescribed for the ITER system, a prototype radiometer covering this frequency range has been developed by Virginia Diodes, Inc. The first plasma measurements with this instrument have been carried out on the DIII-D tokamak, with lab bench tests and measurements of third through fifth harmonic ECE from high T e plasmas. At DIII-D the instrument shares the transmission line of the Michelson interferometer and can simultaneously acquire data. Comparison of the ECE radiation temperature from the absolutely calibrated Michelson and the prototype receiver shows that the ITER radiometer provides accurate measurements of the millimeter radiation across the instrument band.

High-pressure, high-temperature synthesis of superhard boron suboxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hubert, H.; Garvie, L.A.J.; Leinenweber, K.

A multianvil device was used to investigate the formation of B{sub x}O phases produced in the 2 to 10 GPa pressure range with temperatures between 1,000 and 1,800 C. Amorphous and crystalline B and BP were oxidized using B{sub 2}O{sub 3} and CrO{sub 3}. Using powder X-ray diffraction and parallel electron energy-loss spectroscopy (PEELS), the authors were unable to detect graphitic or diamond-structured B{sub 2}O, reported in previous studies. The refractory boride B{sub 6}O, which has the {alpha}-rhombohedral boron structure, is the dominant suboxide in the P and T range of the investigation. PEELS with a transmission electron microscope wasmore » used to characterize the boron oxides.« less

Three Axes MEMS Combined Sensor for Electronic Stability Control System

NASA Astrophysics Data System (ADS)

Jeong, Heewon; Goto, Yasushi; Aono, Takanori; Nakamura, Toshiaki; Hayashi, Masahide

A microelectromechanical systems (MEMS) combined sensor measuring two-axis accelerations and an angular rate (rotation) has been developed for an electronic stability control system of automobiles. With the recent trend to mount the combined sensors in the engine compartment, the operation temperature range increased drastically, with the request of immunity to environmental disturbances such as vibration. In this paper, we report the combined sensor which has a gyroscopic part and two acceleration parts in single die. A deformation-robust MEMS structure has been adopted to achieve stable operation under wide temperature range (-40 to 125°C) in the engine compartment. A package as small as 10 × 19 × 4 mm is achieved by adopting TSV (through silicon via) and WLP (wafer-level package) technologies with enough performance as automotive grade.

Free-free absorption coefficients and Gaunt factors for dense hydrogen-like stellar plasma

NASA Astrophysics Data System (ADS)

Srećković, V. A.; Sakan, N.; Šulić, D.; Jevremović, D.; Ignjatović, Lj M.; Dimitrijević, M. S.

2018-03-01

In this work, we present a study dedicated to determination of the inverse bremsstrahlung absorption coefficients and the corresponding Gaunt factor of dense hydrogen-like stellar-atmosphere plasmas where electron density and temperature change in a wide range. A method suitable for this wide range is suggested and applied to the inner layers of the solar atmosphere, as well as the plasmas of partially ionized layers of some other stellar atmospheres (for example, some DA and DB white dwarfs) where the electron densities vary from 1014 cm-3 to 1020 cm-3 and temperatures from 6000 K to 300 000 K in the wavelength region of 10 nm ≤ λ ≤ 3000 nm. The results of the calculations are illustrated by the corresponding figures and tables.

Hydrodynamic description of transport in strongly correlated electron systems.

PubMed

Andreev, A V; Kivelson, Steven A; Spivak, B

2011-06-24

We develop a hydrodynamic description of the resistivity and magnetoresistance of an electron liquid in a smooth disorder potential. This approach is valid when the electron-electron scattering length is sufficiently short. In a broad range of temperatures, the dissipation is dominated by heat fluxes in the electron fluid, and the resistivity is inversely proportional to the thermal conductivity, κ. This is in striking contrast to the Stokes flow, in which the resistance is independent of κ and proportional to the fluid viscosity. We also identify a new hydrodynamic mechanism of spin magnetoresistance.

High-frequency electron-spin-resonance measurements on Mn x Mg1-x O (x = 1.0×10-4) and DPPH at very low temperatures

NASA Astrophysics Data System (ADS)

Ishikawa, Y.; Ohya, K.; Miura, S.; Fujii, Y.; Mitsudo, S.; Mizusaki, T.; Fukuda, A.; Matsubara, A.; Kikuchi, H.; Asano, T.; Yamamori, H.; Lee, S.; Vasiliev, S.

2018-03-01

We have developed a millimeter-wave electron-spin-resonance (ESR) system for very low temperatures (T < 1 K) that can be employed for nuclear-magnetic-resonance measurements by using dynamic nuclear polarization. The system uses a Fabry-Pérot resonator that works in the frequency range of 125 – 130 GHz and covers the temperature range of 0.09 – 6.5 K. We have performed ESR measurements in the frequency around 128 GHz by using Mn x Mg1-x O (x = 1.0 × 10-4) and free-radical samples of 1, 1-diphenyl-2-picrylhydrazyl (DPPH), because these samples have been proposed as field and sensitivity markers. Temperature dependence of the ESR signal intensity for Mn x Mg1-x O shows anomalies originating from magnetic order are found around 3.5 – 4 K. We estimate the sensitivity of the system for ESR detections to be 6 × 1013 spins/G at 5.8 K. Because DPPH shows no observable shift in the magnetic field, we propose it as a useful standard marker for ESR measurements at very low temperatures.

Debye temperature of metallic nanowires--an experimental determination from the resistance of metallic nanowires in the temperature range 4.2 K-300 K.

PubMed

Bid, Aveek; Bora, Achyut; Raychaudhuri, A K

2007-06-01

We have studied the resistance of metallic nanowires (silver and copper) as a function of the wire diameter in the temperature range 4.2 K-300 K. The nanowires with an average diameter of 15 nm-200 nm and length 6 microm were electrochemically deposited using polycarbonate membranes as template from AgNO3 and CuSO4, respectively. The wires after growth were removed from the membranes by dissolving the polymer in dichloromethane and their crystalline nature confirmed by XRD and TEM studies. The TEM study establishes that the nanowires are single crystalline and can have twin in them. The resistivity data was fitted to Bloch-Gruneisen theorem with the values of Debye temperature and the electron-acoustic phonon coupling constant as the two fit variables. The value of the Debye temperature obtained for the Ag wires was seen to match well with that of the bulk while for Cu wires a significant reduction was observed. The observed increase in resistivity with a decrease in the wire diameter could be explained as due to diffuse surface scattering of the conduction electrons.

Thermoelectric properties and figure of merit of perovskite-type Ba1-xLaxSnO3 with x=0.002-0.008

NASA Astrophysics Data System (ADS)

Yasukawa, Masahiro; Kono, Toshio; Ueda, Kazushige; Yanagi, Hiroshi; Wng Kim, Sung; Hosono, Hideo

2013-10-01

Thermoelectric properties and figure of merit were evaluated from the Seebeck coefficient S, electrical conductivity σ, and thermal conductivity κ measured at high temperatures for perovskite-type ceramics of Ba1-xLaxSnO3 with x=0.002, 0.005, and 0.008, which were prepared by a polymerized complex method and a subsequent spark plasma sintering technique. All the polycrystalline dense ceramics showed n-type degenerate semiconducting behavior in the temperature range of 373-1073 K. The La content dependence of the S values revealed successful increase in the electron carriers with the La doping in this x range. The κ values remained almost unchanged with x showing ~9.6 Wm-1 K-1 at room temperature and decreased with increasing temperature. The electronic thermal conductivities calculated by the Wiedemann-Franz law as well as the T-1 dependence of the κ values indicate that the phonon thermal conductivity was dominant. The dimensionless figure of merit ZT increased with increasing temperature for all the ceramics and showed ~0.1 at 1073 K for the ceramics with x=0.002 and 0.005.

Absolute laser-intensity measurement and online monitor calibration using a calorimeter at a soft X-ray free-electron laser beamline in SACLA

NASA Astrophysics Data System (ADS)

Tanaka, Takahiro; Kato, Masahiro; Saito, Norio; Owada, Shigeki; Tono, Kensuke; Yabashi, Makina; Ishikawa, Tetsuya

2018-06-01

This paper reports measurement of the absolute intensity of free-electron laser (FEL) and calibration of online intensity monitors for a brand-new FEL beamline BL1 at SPring-8 Angstrom Compact free-electron LAser (SACLA) in Japan. To measure the absolute intensity of FEL, we used a room-temperature calorimeter originally developed for FELs in the hard X-ray range. By using the calorimeter, we calibrated online intensity monitors of BL1, gas monitors (GMs), based on the photoionization of argon gas, in the photon energy range from 25 eV to 150 eV. A good correlation between signals obtained from the calorimeter and GMs was observed in the pulse energy range from 1 μJ to 100 μJ, where the upper limit is nearly equal to the maximum pulse energy at BL1. Moreover, the calibration result of the GMs, measured in terms of the spectral responsivity, demonstrates a characteristic photon-energy dependence owing to the occurrence of the Cooper minimum in the total ionization cross-section of argon gas. These results validate the feasibility of employing the room-temperature calorimeter in the measurement of absolute intensity of FELs over the specified photon energy range.

Electrical conductivity of rigid polyurethane foam at high temperature

NASA Astrophysics Data System (ADS)

Johnson, R. T., Jr.

1982-08-01

The electrical conductivity of rigid polyurethane foam, used for electronic encapsulation, was measured during thermal decomposition to 3400 C. At higher temperatures the conductance continues to increase. With pressure loaded electrical leads, sample softening results in eventual contact between electrodes which produces electrical shorting. Air and nitrogen environments show no significant dependence of the conductivity on the atmosphere over the temperature range. The insulating characteristics of polyurethane foam below approx. 2700 C are similar to those for silicone based materials used for electronic case housings and are better than those for phenolics. At higher temperatures (greater than or equal to 2700 C) the phenolics appear to be better insulators to approx. 5000 C and the silicones to approx. 6000 C. It is concluded that the Sylgard 184/GMB encapsulant is a significantly better insulator at high temperature than the rigid polyurethane foam.

Evaluation of Capacitors at Cryogenic Temperatures for Space Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Gerber, Scott S.

1998-01-01

Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme cold temperatures of deep space environment. In addition, spacecraft power electronics capable of cold temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature from room to liquid nitrogen in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications.

Temperature gradients due to adiabatic plasma expansion in a magnetic nozzle

NASA Astrophysics Data System (ADS)

Sheehan, J. P.; Longmier, B. W.; Bering, E. A.; Olsen, C. S.; Squire, J. P.; Ballenger, M. G.; Carter, M. D.; Cassady, L. D.; Díaz, F. R. Chang; Glover, T. W.; Ilin, A. V.

2014-08-01

A mechanism for ambipolar ion acceleration in a magnetic nozzle is proposed. The plasma is adiabatic (i.e., does not exchange energy with its surroundings) in the diverging section of a magnetic nozzle so any energy lost by the electrons must be transferred to the ions via the electric field. Fluid theory indicates that the change in plasma potential is proportional to the change in average electron energy. These predictions were compared to measurements in the VX-200 experiment which has conditions conducive to ambipolar ion acceleration. A planar Langmuir probe was used to measure the plasma potential, electron density, and electron temperature for a range of mass flow rates and power levels. Axial profiles of those parameters were also measured, showing consistency with the adiabatic ambipolar fluid theory.

Studies on time of death estimation in the early post mortem period -- application of a method based on eyeball temperature measurement to human bodies.

PubMed

Kaliszan, Michał

2013-09-01

This paper presents a verification of the thermodynamic model allowing an estimation of the time of death (TOD) by calculating the post mortem interval (PMI) based on a single eyeball temperature measurement at the death scene. The study was performed on 30 cases with known PMI, ranging from 1h 35min to 5h 15min, using pin probes connected to a high precision electronic thermometer (Dostmann-electronic). The measured eye temperatures ranged from 20.2 to 33.1°C. Rectal temperature was measured at the same time and ranged from 32.8 to 37.4°C. Ambient temperatures which ranged from -1 to 24°C, environmental conditions (still air to light wind) and the amount of hair on the head were also recorded every time. PMI was calculated using a formula based on Newton's law of cooling, previously derived and successfully tested in comprehensive studies on pigs and a few human cases. Thanks to both the significantly faster post mortem decrease of eye temperature and a residual or nonexistent plateau effect in the eye, as well as practically no influence of body mass, TOD in the human death cases could be estimated with good accuracy. The highest TOD estimation error during the post mortem intervals up to around 5h was 1h 16min, 1h 14min and 1h 03min, respectively in three cases among 30, while for the remaining 27 cases it was not more than 47min. The mean error for all 30 cases was ±31min. All that indicates that the proposed method is of quite good precision in the early post mortem period, with an accuracy of ±1h for a 95% confidence interval. On the basis of the presented method, TOD can be also calculated at the death scene with the use of a proposed portable electronic device (TOD-meter). Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Strain effect on the photoluminescence property of gold nanoclusters

NASA Astrophysics Data System (ADS)

Saravanan, K.; David, C.; Jayalakshmi, G.; Panigrahi, B. K.; Avasthi, D. K.

2018-02-01

Herein, we report the temperature-dependent photoluminescence (PL) properties of Au nanoclusters (NCs) embedded in a Si matrix. Gold NCs have been synthesized in Si by a multistep procedure that involves ion implantation and gold decoration by drive in annealing. Transmission electron microscopic studies reveal profuse nucleation of Au NCs, with mean sizes of ˜8 nm in the near-surface region. PL measurements in the range of 2 eV to 3.65 eV were carried out in the temperature range of 5 K to 300 K. The Au NCs exhibit PL emissions at 3 eV and 2.5 eV; these are attributed to the recombination of sp-band electrons with the holes of a deep lying d-band below the Fermi level in the vicinity of the L symmetry point of the Brillouin zone and the recombination of sp band electrons with the holes of the first d band below the Fermi level in the vicinity of the X symmetry point of the Brillouin zone, respectively. Temperature-dependent PL measurements show that the PL intensity of Au NCs initially decreases with the increase of temperature up to 50 K, and, thereafter, the intensity starts to increase and reaches a maximum at 150 K. A further increase in temperature causes the intensity to decrease. However, the PL intensity of Au NCs embedded in a sapphire matrix monotonically decreases with the increase of temperature. The present work discusses the plausible mechanism behind this unusual PL behaviour by invoking the role of strain at the NC-matrix interface.

Microstructural studies of 35 degrees C copper Ni-Ti orthodontic wire and TEM confirmation of low-temperature martensite transformation.

PubMed

Brantley, William A; Guo, Wenhua; Clark, William A T; Iijima, Masahiro

2008-02-01

Previous temperature-modulated differential scanning calorimetry (TMDSC) study of nickel-titanium orthodontic wires revealed a large exothermic low-temperature peak that was attributed to transformation within martensitic NiTi. The purpose of this study was to use transmission electron microscopy (TEM) to verify this phase transformation in a clinically popular nickel-titanium wire, identify its mechanism and confirm other phase transformations found by TMDSC, and to provide detailed information about the microstructure of this wire. The 35 degrees C Copper nickel-titanium wire (Ormco) with cross-section dimensions of 0.016 in. x 0.022 in. used in the earlier TMDSC investigation was selected. Foils were prepared for TEM analyses by mechanical grinding, polishing, dimpling, ion milling and plasma cleaning. Standard bright-field and dark-field TEM images were obtained, along with convergent-beam electron diffraction patterns. A cryo-stage with the electron microscope (Phillips CM 200) permitted the specimen to be observed at -187, -45, and 50 degrees C, as well as at room temperature. Microstructures were also observed with an optical microscope and a scanning electron microscope. Room temperature microstructures had randomly oriented, elongated grains that were twinned. Electron diffraction patterns confirmed that phase transformations took place over temperature ranges previously found by TMDSC. TEM observations revealed a high dislocation density and fine-scale oxide particles, and that twinning is the mechanism for the low-temperature transformation in martensitic NiTi. TEM confirmed the low-temperature peak and other phase transformations observed by TMDSC, and revealed that twinning in martensite is the mechanism for the low-temperature peak. The high dislocation density and fine-scale oxide particles in the microstructure are the result of the wire manufacturing process.

Local-structure change rendered by electronic localization-delocalization transition in cerium-based metallic glasses

NASA Astrophysics Data System (ADS)

Luo, Qiang; Schwarz, Björn; Swarbrick, Janine C.; Bednarčik, Jozef; Zhu, Yingcai; Tang, Meibo; Zheng, Lirong; Li, Ran; Shen, Jun; Eckert, Jürgen

2018-02-01

With increasing temperature, metallic glasses (MGs) undergo first glass transition without pronounced structural change and then crystallization with distinct variation in structure and properties. The present study shows a structural change of short-range order induced by an electron-delocalization transition, along with an unusual large-volume shrinkage in Ce-based MGs. An f -electron localization-delocalization transition with thermal hysteresis is observed from the temperature dependence of x-ray absorption spectroscopy and resonant inelastic x-ray scattering spectra, indicating an inheritance of the 4 f configuration of pure Ce. However, the delocalization transition becomes broadened due to the local structural heterogeneity and related fluctuation of 4 f levels in the Ce-based MGs. The amorphous structure regulated 4 f delocalization of Ce leads to bond shortening and abnormal structure change of the topological and chemical short-range orders. Due to the hierarchical bonding nature, the structure should change in a similar manner on different length scales (but not isostructurally like the Ce metal) in Ce-based MGs.

Time Dependent Solution for the He I Line Ratio Electron Temperature and Density Diagnostic in TEXTOR and DIII-D

NASA Astrophysics Data System (ADS)

Munoz Burgos, J. M.; Schmitz, O.; Unterberg, E. A.; Loch, S. D.; Balance, C. P.

2010-11-01

We developed a time dependent solution for the He I line ratio diagnostic. Stationary solution is applied for L-mode at TEXTOR. The radial range is typically limited to a region near the separatrix due to metastable effects, and the atomic data used. We overcome this problem by applying a time dependent solution and thus avoid unphysical results. We use a new R-Matrix with Pseudostates and Convergence Cross-Coupling electron impact excitation and ionization atomic data set into the Collisional Radiative Model (CRM). We include contributions from higher Rydberg states into the CRM by means of the projection matrix. By applying this solution (to the region near the wall) and the stationary solution (near the separatrix), we triple the radial range of the current diagnostic. We explore the possibility of extending this approach to H-mode plasmas in DIII-D by estimating line emission profiles from electron temperature and density Thomson scattering data.

Specific features of electron scattering in uniaxially deformed n-Ge single crystals in the presence of radiation defects

NASA Astrophysics Data System (ADS)

Luniov, S. V.; Zimych, A. I.; Nazarchuk, P. F.; Maslyuk, V. T.; Megela, I. G.

2016-12-01

Temperature dependencies for concentration of electrons and the Hall mobility for unirradiated and irradiated by the flow of electrons ? single crystals ?, with the energy of ?, for different values of uniaxial pressures along the crystallographic directions ?, ? and ? are obtained on the basis of piezo-Hall effect measurements. Non-typical growth of the Hall mobility of electrons for irradiated single crystals ? in comparison with unirradiated with the increasing of value of uniaxial pressures along the crystallographic directions ? (for the entire range of the investigated temperatures) and ? (to temperatures ?) has been revealed. Such an effect of the Hall mobility increase for uniaxially deformed single crystals ? is explained by the reduction of gradients of a resistance as a result of reduction in the amplitude of a large-scale potential with deformation and concentration of charged A-centers in the process of their recharge by the increasing of uniaxial pressure and consequently the probability of scattering on these centers. Theoretical calculations for temperature dependencies of the Hall mobility for uniaxially deformed single crystals ? in terms of the electrons scattering on the ions of shallow donors, acoustic, optical and intervalley phonons, regions of disordering and large-scale potential is good conformed to the corresponding experimental results at temperatures T<220 K for the case of uniaxial pressures along the crystallographic directions ? and ? and for temperatures ? when the uniaxial pressure is directed along the crystallographic directions ?. The mechanism of electron scattering on a charged radiation defects (which correspond to the deep energy levels of A-centers) 'is turned off' for the given temperatures due to the uniaxial pressure. Reduction of the Hall mobility in transition through a maximum of dependence ? with the increasing temperature for cases of the uniaxial deformation of the irradiated single crystals ? along the crystallographic directions ? and ? is explained by the deforming redistribution of electrons between the minima of conduction band of germanium with different mobility.

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

NASA Astrophysics Data System (ADS)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

Sensing the temperature influence on plasmonic field of metal nanoparticles by photoluminescence of fullerene C{sub 60} in layered C{sub 60}/Au system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeshchenko, Oleg A., E-mail: yes@univ.kiev.ua; Bondarchuk, Illya S.; Kozachenko, Viktor V.

2015-04-21

Influence of temperature on the plasmonic field in the temperature range of 78–278 K was studied employing surface plasmon enhanced photoluminescence from the fullerene C{sub 60} thin film deposited on 2D array of Au nanoparticles. It was experimentally found that temperature dependence of plasmonic enhancement factor of C{sub 60} luminescence decreases monotonically with the temperature increase. Influence of temperature on plasmonic enhancement factor was found to be considerably stronger when the frequency of surface plasmon absorption band of Au nanoparticles and the frequency of fullerene luminescence band are in resonance. Electron-phonon scattering and thermal expansion of Au nanoparticles were considered asmore » two competing physical mechanisms of the temperature dependence of plasmonic field magnitude. The calculations revealed significant prevalence of the electron-phonon scattering. The temperature induced increase in the scattering rate leads to higher plasmon damping that causes the decrease in the magnitude of plasmonic field.« less

Measurement of collective excitations in VO 2 by resonant inelastic x-ray scattering

DOE PAGES

He, Haowei; Gray, A. X.; Granitzka, P.; ...

2016-10-15

Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic x-ray scattering is used to measure the excitation spectrum of charge and spin degrees of freedom at the vanadium L edge under different polarization and temperature conditions, revealing excitations that differ greatly from those seen in optical measurements. Furthermore, these spectra encode the evolution of short-range energetics across the metal-insulator transition, including the low-temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.

Cryogenic Pressure Calibrator for Wide Temperature Electronically Scanned (ESP) Pressure Modules

NASA Technical Reports Server (NTRS)

Faulcon, Nettie D.

2001-01-01

Electronically scanned pressure (ESP) modules have been developed that can operate in ambient and in cryogenic environments, particularly Langley's National Transonic Facility (NTF). Because they can operate directly in a cryogenic environment, their use eliminates many of the operational problems associated with using conventional modules at low temperatures. To ensure the accuracy of these new instruments, calibration was conducted in a laboratory simulating the environmental conditions of NTF. This paper discusses the calibration process by means of the simulation laboratory, the system inputs and outputs and the analysis of the calibration data. Calibration results of module M4, a wide temperature ESP module with 16 ports and a pressure range of +/- 4 psid are given.

Investigation on structural and electrical properties of Fe doped ZnO nanoparticles synthesized by solution combustion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ram, Mast, E-mail: mastram1999@yahoo.com; Bala, Kanchan; Sharma, Hakikat

In the present study, nanoparticles of Fe doped zinc oxide (ZnO) [Zn{sub 1-x}Fe{sub x}O where x=0.0, 0.01, 0.02, 0.03 and 0.05] were prepared by cost effective solution combustion method. The powder X-ray diffractometry confirms the formation of single phase wurtzite structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the micrsostructure of Fe-doped ZnO nanoparticles. The DC electrical conductivity was found to increase with temperature and measurement was carried out in the temperature range of 300-473K. DC electrical conductivity increases with temperature and decreases with Fe doping concentration.

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muñoz Burgos, J. M.; Barbui, T.; Schmitz, O.

Helium line-ratios for electron temperature (T e) and density (n e) plasma diagnostic in the Scrape-Off-Layer (SOL) and Edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet 667.8 and 728.1 nm, and triplet 706.5 nm visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium, and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. Ultimately, the analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer, or by other conflicting lines from different ions.« less

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muñoz Burgos, J. M., E-mail: jmunozbu@pppl.gov; Stutman, D.; Tritz, K.

Helium line-ratios for electron temperature (T{sub e}) and density (n{sub e}) plasma diagnostic in the Scrape-Off-Layer (SOL) and edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet, 667.8 and 728.1 nm, and triplet, 706.5 nm, visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. The analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer or by other conflicting lines from different ions.« less

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE PAGES

Muñoz Burgos, J. M.; Barbui, T.; Schmitz, O.; ...

2016-07-11

Helium line-ratios for electron temperature (T e) and density (n e) plasma diagnostic in the Scrape-Off-Layer (SOL) and Edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet 667.8 and 728.1 nm, and triplet 706.5 nm visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium, and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. Ultimately, the analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer, or by other conflicting lines from different ions.« less

Comparison of cryogenic low-pass filters.

PubMed

Thalmann, M; Pernau, H-F; Strunk, C; Scheer, E; Pietsch, T

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Comparison of cryogenic low-pass filters

NASA Astrophysics Data System (ADS)

Thalmann, M.; Pernau, H.-F.; Strunk, C.; Scheer, E.; Pietsch, T.

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

The Effect of Temperature and Hydrogen Limited Growth on the Fractionation of Sulfur Isotopes by Thermodesulfatator indicus, a Deep-sea Hydrothermal Vent Sulfate-Reducing Bacterium

NASA Astrophysics Data System (ADS)

Hoek, J.; Reysenbach, A.; Habicht, K.; Canfield, D. E.

2004-12-01

Sulfate-reducing bacteria fractionate sulfur isotopes during dissimilatory sulfate reduction, producing sulfide depleted in 34S. Although isotope fractionation during sulfate reduction of pure cultures has been extensively studied, most of the research to date has focused on mesophilic sulfate reducers, particularly for the species Desulfovibrio desulfuricans. Results from these studies show that: 1) fractionations range from 3-46‰ with an average around 18‰ , 2) when organic electron donors are utilized, the extent of fractionation is dependent on the rate of sulfate reduction, with decreasing fractionations observed with higher specific rates, 3) fractionations are suppressed with low sulfate concentrations, and when hydrogen is used as the electron donor. High specific sulfate-reduction rates are encountered when sulfate-reducing bacteria metabolize at their optimal temperature and under non-limiting substrate conditions. Changes in both temperature and substrate availability could shift fractionations from those expressed under optimal growth conditions. Sulfate reducers may frequently experience substrate limitation and sub-optimal growth temperatures in the environment. Therefore it is important to understand how sulfate-reducing bacteria fractionate sulfur isotopes under conditions that more closely resemble the restrictions imposed by the environment. In this study the fractionation of sulfur isotopes by Thermodesulfatator indicus was explored during sulfate reduction under a wide range of temperatures and with both hydrogen-saturating and hydrogen-limited conditions. T. indicus is a thermophilic (temperature optimum = 70° C) chemolithotrophic sulfate-reducing bacterium, which was recently isolated from a deep-sea hydrothermal vent on the Central Indian Ridge. This bacterium represents the type species of a new genus and to date is the most deeply branching sulfate-reducing bacterium known. T. indicus was grown in carbonate-buffered salt-water medium with H2 as the sole electron donor, and CO2 as primary carbon source. The fractionation of sulfur isotopes was measured in batch cultures and in a thermal gradient block over the full temperature range of growth (40-80° C). For experiments in the gradient block, cell-specific rates of sulfate reduction increased with increasing temperatures to 70° C after which sulfate-reduction rates rapidly decreased. The range of fractionations (1.5-10‰ ) was typical for growth with hydrogen as the electron donor. Fractionations decreased with increasing temperature from 40--60° C, and increased with increasing temperatures from 60-80° C. Growth under H2-limited conditions in a fed-batch culture revealed high fractionations of 24-37‰ . This is the first report of sulfur isotope fractionation under H2 limited growth and indicates that large fractionations are produced when H2 is supplied as a limiting substrate. Our results suggest that fractionation is controlled by the competition of forward and reverse enzymatic reaction rates during sulfate reduction and by sulfate transport into the cell.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asha, S.; Sangappa,; Sanjeev, Ganesh, E-mail: ganeshanjeev@rediffmail.com

Radiation-induced changes in Bombyx mori silk fibroin (SF) films under electron irradiation were investigated and correlated with dose. SF films were irradiated in air at room temperature using 8 MeV electron beam in the range 0-150 kGy. Various properties of the irradiated SF films were studied using X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Electron irradiation was found to induce changes in the physical and thermal properties, depending on the radiation dose.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Origin of colossal permittivity in (In1/2Nb1/2)TiO2via broadband dielectric spectroscopy.

PubMed

Zhao, Xiao-gang; Liu, Peng; Song, Yue-Chan; Zhang, An-ping; Chen, Xiao-ming; Zhou, Jian-ping

2015-09-21

(In1/2Nb1/2)TiO2 (IN-T) ceramics were prepared via a solid-state reaction route. X-ray diffraction (XRD) and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compounds. The results indicated that the sintered ceramics have a single phase of rutile TiO2. Dielectric spectroscopy (frequency range from 20 Hz to 1 MHz and temperature range from 10 K to 270 K) was performed on these ceramics. The IN-T ceramics showed extremely high permittivities of up to ∼10(3), which can be referred to as colossal permittivity, with relatively low dielectric losses of ∼0.05. Most importantly, detailed impedance data analyses of IN-T demonstrated that electron-pinned defect-dipoles, interfacial polarization and polaron hopping polarization contribute to the colossal permittivity at high temperatures (270 K); however, only the complexes (pinned electron) and polaron hopping polarization are active at low temperatures (below 180 K), which is consistent with UDR analysis.

Magnetothermopower of δ-doped LaTiO3/SrTiO3 interfaces in the Kondo regime

NASA Astrophysics Data System (ADS)

Das, Shubhankar; Joshi, P. C.; Rastogi, A.; Hossain, Z.; Budhani, R. C.

2014-08-01

Measurements of magnetothermopower [S (H,T)] of interfacial δ-doped LaTiO3/SrTiO3 (LTO/STO) heterostructure by an isostructural antiferromagnetic perovskite LaCrO3 are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is ≈118 μV /K, but increases dramatically on δ doping. The observed linear temperature dependence of S (T) over the temperature range 100 to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S (T) displays a distinct enhancement in the temperature range (T < 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S (T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo-model-based interpretation of S (H,T).

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

PubMed

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

PubMed Central

Sokolowski-Tinten, K.; Shen, X.; Zheng, Q.; Chase, T.; Coffee, R.; Jerman, M.; Li, R. K.; Ligges, M.; Makasyuk, I.; Mo, M.; Reid, A. H.; Rethfeld, B.; Vecchione, T.; Weathersby, S. P.; Dürr, H. A.; Wang, X. J.

2017-01-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels. PMID:28795080

Simplified Numerical Description of SPT Operations

NASA Technical Reports Server (NTRS)

Manzella, David H.

1995-01-01

A simplified numerical model of the plasma discharge within the SPT-100 stationary plasma thruster was developed to aid in understanding thruster operation. A one dimensional description was used. Non-axial velocities were neglected except for the azimuthal electron velocity. A nominal operating condition of 4.5 mg/s of xenon anode flow was considered with 4.5 Amperes of discharge current, and a peak radial magnetic field strength of 130 Gauss. For these conditions, the calculated results indicated ionization fractions of 0.99 near the thruster exit with a potential drop across the discharge of approximately 250 Volts. Peak calculated electron temperatures were found to be sensitive to the choice of total ionization cross section for ionization of atomic xenon by electron bombardment and ranged from 51 eV to 60 eV. The calculated ionization fraction, potential drop, and electron number density agree favorably with previous experiments. Calculated electron temperatures are higher than previously measured.

Transport coefficients in nonequilibrium gas-mixture flows with electronic excitation.

PubMed

Kustova, E V; Puzyreva, L A

2009-10-01

In the present paper, a one-temperature model of transport properties in chemically nonequilibrium neutral gas-mixture flows with electronic excitation is developed. The closed set of governing equations for the macroscopic parameters taking into account electronic degrees of freedom of both molecules and atoms is derived using the generalized Chapman-Enskog method. The transport algorithms for the calculation of the thermal-conductivity, diffusion, and viscosity coefficients are proposed. The developed theoretical model is applied for the calculation of the transport coefficients in the electronically excited N/N(2) mixture. The specific heats and transport coefficients are calculated in the temperature range 50-50,000 K. Two sets of data for the collision integrals are applied for the calculations. An important contribution of the excited electronic states to the heat transfer is shown. The Prandtl number of atomic species is found to be substantially nonconstant.

A new route for the synthesis of submicron-sized LaB{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lihong, Bao; Wurentuya,; Wei, Wei

Submicron crystalline LaB{sub 6} has been successfully synthesized by a solid-state reaction of La{sub 2}O{sub 3} with NaBH{sub 4} at 1200 °C. The effects of reaction temperature on the crystal structure, grain size and morphology were investigated by X-ray diffraction, scanning electron microscope and transmission electron microscope. It is found that when the reaction temperature is in the range of 1000–1100 °C, there are ultrafine nanoparticles and nanocrystals that coexist. When the reaction temperature elevated to 1200 °C, the grain morphology transformed from ultrafine nanoparticle to submicron crystals completely. High resolution transmission electron microscope images fully confirm the formation ofmore » LaB{sub 6} cubic structure. - Highlights: • Single-phased LaB{sub 6} have been synthesized by a solid-state reaction in a continuous evacuating process. • The reaction temperature has a important effect on the phase composition. • The grain size increase from nano-size to submicron with increasing reaction temperature.« less

Large Thermopower of δ-doped LaTiO3/SrTiO3 Interfaces and it's Field Dependence

NASA Astrophysics Data System (ADS)

Budhani, R. C.; Das, Shubhankar; Joshi, P. C.; Rastogi, A.; Hossain, Z.

2015-03-01

We will present the magneto-thermopower (S(T, H)) of interfacial delta doped LaTiO3/SrTiO3 heterostructure by an iso-structural antiferromagnetic perovskite LaCrO3. The thermoelectric power of 2-dimensional electron gas (2DEG) of pure LaTiO3/SrTiO3 at 300 K is ~ 118 μV/K, but increases dramatically to 337 μV/K on inserting 5 uc LaCrO3 at the interface. The negative sign of the thermoelectric power confirms the electron as major carriers in these interfaces. A linear temperature dependence of S(T) has been observed in the temperature range 100 K to 300 K which is in agreement with the theory of diffusion thermopower of 2DEG. The S(T) shows a distinct enhancement at temperature <100 K, where a Kondo-type minimum has been observed in sheet resistance. We attribute this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spin at the interface. The S in this temperature range is suppressed significantly (<= 20%) by moderate magnetic field (<= 13 T) applied either perpendicular or parallel to the film surface. The isotropic nature of the suppression of S by magnetic field further strengthen the Kondo based interpretation of S(T, H). We acknowledge IIT Kanpur and CSIR India for funding this research work.

Evolution of structural, electronic and magneto-transport properties of Sr2Ir1-xTixO4 5d based oxide

NASA Astrophysics Data System (ADS)

Bhatti, Imtiaz Noor; Pramanik, A. K.

2018-05-01

To investigate the effect of chemical doping on structural and transport properties in Sr2IrO4, in this study we have doped Ti4+ (3d0) at Ir4+ (5d5) site. Thus Ti doping introduces hole in the electronic band moreover, it also weaken the spin orbital coupling (SOC) and enhance electronic correlation (U). We have prepared the polycrystalline samples of Sr2Ir1-xTixO4 with x = 0.0 0.05 and 0.10 with solid state reaction method. Single phase and chemically pure samples were obtained. All samples crystalizes in tetragonal structure and I41/acd symmetry. The structural analysis shows the evolution of lattice parameter with doping. The temperature dependent resistivity is measured using four probe technique down in the temperature range 5 K-300 K. The resistivity increases with Ti doping. Temperature dependency of resistivity is explained by thermal activated 2-dimensional Mott Variable Hopping range model. To further understand the transport behavior both temperature and field dependent magneto-resistance is also studied. Negative magneto-resistance (MR) has been observed for all samples at 50 K. The MR shows quadratic field dependence at high field, implies a relevance of a quantum interference effect in this spin orbital coupled insulator.

Dualism of the 5f electrons of the ferromagnetic superconductor UGe2 as seen in magnetic, transport, and specific-heat data

NASA Astrophysics Data System (ADS)

Troć, R.; Gajek, Z.; Pikul, A.

2012-12-01

Single-crystalline UGe2 was investigated by means of magnetic susceptibility, magnetization, electrical resistivity, magnetoresistivity, and specific-heat measurements, all carried out in wide temperature and magnetic-field ranges. An analysis of the obtained data points out the dual behavior of the 5f electrons in this compound, i.e., possessing simultaneously local and itinerant characters in two substates. The magnetic and thermal characteristics of the compound were modeled using the effective crystal field (CF) in the intermediate coupling scheme and initial parameters obtained in the angular overlap model. Various configurations of the localized 5fn (n = 1, 2, and 3) electrons on the uranium ion have been probed. The best results were obtained for the 5f2 (U4+) configuration. The CF parameters obtained in the paramagnetic region allowed us to reproduce satisfactorily the experimental findings in the whole temperature range including also the magnitude of the ordered magnetic moment of uranium at low temperature. The electrical resistivity data after subtraction of the phonon contribution reveal the presence of a Kondo-like interaction in UGe2 supporting the idea of partial localization of the 5f electrons in UGe2. On the other hand, magnetoresistivity and an excess of specific heat originated from the hybridized (itinerant) part of 5f states, apparent around the characteristic temperature T*, give a distinct signature for the presence of the coupled charge-density wave and spin-density wave fluctuations over all the ferromagnetic region with a maximum at T*, postulated earlier in the literature.

Mach number dependence of electron heating at high Mach number interplanetary shocks in the inner heliospere

NASA Astrophysics Data System (ADS)

Matsukiyo, Shuichi

In the inner heliosphere a variety of interplanetary shocks with different Mach numbers are expected to be present. A possible maximum Mach number at 0.3AU from the sun is esti-mated to be about 40. Efficiency of electron heating in such high Mach number shocks is one of the outstanding issues of space plasma physics as well as astrophysics. Here, from this aspect, electron heating rate through microinstabilities generated in the transition region of a quasi-perpendicular shock for wide range of Mach numbers is investigated. Saturation levels of effective electron temperature as a result of modified two-stream instability (MTSI) are es-timated by using a semianalytic approach which we call an extended quasilinear analysis here. The results are compared with one-dimensional full particle-in-cell simulations. It is revealed that Mach number dependence of the effective electron temperature is weak when a Mach num-ber is below a certain critical value. Above the critical value, electron temperature increases being proportional to an upstream flow energy because of that a dominant microinstability in the foot changes from the MTSI to Buneman instability. The critical Mach number is roughly estimated to be a few tens.

Temperature dependence of the Urbach optical absorption edge: A theory of multiple phonon absorption and emission sidebands

NASA Astrophysics Data System (ADS)

Grein, C. H.; John, Sajeev

1989-01-01

The optical absorption coefficient for subgap electronic transitions in crystalline and disordered semiconductors is calculated by first-principles means with use of a variational principle based on the Feynman path-integral representation of the transition amplitude. This incorporates the synergetic interplay of static disorder and the nonadiabatic quantum dynamics of the coupled electron-phonon system. Over photon-energy ranges of experimental interest, this method predicts accurate linear exponential Urbach behavior of the absorption coefficient. At finite temperatures the nonlinear electron-phonon interaction gives rise to multiple phonon emission and absorption sidebands which accompany the optically induced electronic transition. These sidebands dominate the absorption in the Urbach regime and account for the temperature dependence of the Urbach slope and energy gap. The physical picture which emerges is that the phonons absorbed from the heat bath are then reemitted into a dynamical polaronlike potential well which localizes the electron. At zero temperature we recover the usual polaron theory. At high temperatures the calculated tail is qualitatively similar to that of a static Gaussian random potential. This leads to a linear relationship between the Urbach slope and the downshift of the extrapolated continuum band edge as well as a temperature-independent Urbach focus. At very low temperatures, deviations from these rules are predicted arising from the true quantum dynamics of the lattice. Excellent agreement is found with experimental data on c-Si, a-Si:H, a-As2Se3, and a-As2S3. Results are compared with a simple physical argument based on the most-probable-potential-well method.

Vitrification of waste

DOEpatents

Wicks, George G.

1999-01-01

A method for encapsulating and immobilizing waste for disposal. Waste, preferably, biologically, chemically and radioactively hazardous, and especially electronic wastes, such as circuit boards, are placed in a crucible and heated by microwaves to a temperature in the range of approximately 300.degree. C. to 800.degree. C. to incinerate organic materials, then heated further to a temperature in the range of approximately 1100.degree. C. to 1400.degree. C. at which temperature glass formers present in the waste will cause it to vitrify. Glass formers, such as borosilicate glass, quartz or fiberglass can be added at the start of the process to increase the silicate concentration sufficiently for vitrification.

Temperature anisotropy instabilities stimulated by the interplay of the core and halo electrons in space plasmas

NASA Astrophysics Data System (ADS)

Lazar, M.; Shaaban, S. M.; Fichtner, H.; Poedts, S.

2018-02-01

Two central components are revealed by electron velocity distributions measured in space plasmas, a thermal bi-Maxwellian core and a bi-Kappa suprathermal halo. A new kinetic approach is proposed to characterize the temperature anisotropy instabilities driven by the interplay of core and halo electrons. Suggested by the observations in the solar wind, direct correlations of these two populations are introduced as co-variations of the key parameters, e.g., densities, temperature anisotropies, and (parallel) plasma betas. The approach involving correlations enables the instability characterization in terms of either the core or halo parameters and a comparative analysis to depict mutual effects. In the present paper, the instability conditions are described for an extended range of plasma beta parameters, making the new dual approach relevant for a wide variety of space plasmas, including the solar wind and planetary magnetospheres.

Synthesis, structural and optical properties of nanocrystalline vanadium doped zinc oxide aerogel

NASA Astrophysics Data System (ADS)

El Ghoul, J.; Barthou, C.; El Mir, L.

2012-06-01

We report the synthesis of vanadium-doped ZnO nanoparticles prepared by a sol-gel processing technique. In our approach, the water for hydrolysis was slowly released by esterification reaction followed by a supercritical drying in ethyl alcohol. Vanadium doping concentration of 10 at% has been investigated. After treatment in air at different temperatures, the obtained nanopowder was characterized by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). Analysis by scanning electron microscopy at high resolution shows that the grain size increases with increasing temperature. Thus, in the case of thermal treatment at 500 °C in air, the powder with an average particle size of 25 nm shows a strong luminescence band in the visible range. The intensity and energy position of the obtained PL band depends on the temperature measurement increase. The mechanism of this emission band is discussed.

Preliminary Spectroscopic Measurements for a Gallium Electromagnetic (GEM) Thruster

NASA Technical Reports Server (NTRS)

Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

2007-01-01

As a propellant option for electromagnetic thrusters, liquid ,gallium appears to have several advantages relative to other propellants. The merits of using gallium in an electromagnetic thruster (EMT) are discussed and estimates of discharge current levels and mass flow rates yielding efficient operation are given. The gallium atomic weight of 70 predicts high efficiency in the 1500-2000 s specific impulse range, making it ideal for higher-thrust, near-Earth missions. A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma and estimate electron temperature. The spectra show that neutral, singly, and doubly ionized gallium species are present in a 20 J, 1.8 kA (peak) are discharge. With graphite present on the insulator to facilitate breakdown, singly and doubly ionized carbon atoms are also present, and emission is observed from molecular carbon (CZ) radicals. A determination of the electron temperature was attempted using relative emission line data, and while the spatially and temporally averaged, spectra don't fit well to single temperatures, the data and presence of doubly ionized gallium are consistent with distributions in the 1-3 eV range.

Effect of annealing on the optical properties of amorphous Se79Te10Sb4Bi7 thin films

NASA Astrophysics Data System (ADS)

Nyakotyo, H.; Sathiaraj, T. S.; Muchuweni, E.

2017-07-01

Thin films of Se79Te10Sb4Bi7, were prepared by Electron beam deposition technique. The structure of the as-prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333-393 K. The optical transmission of these films has been studied as a function of photon wavelength in the range 300-2500 nm. It has been found that the optical band gap Egopt decreased with increasing annealing temperature in the range 333-393 K. The Urbach energy (Eu), optical conductivity (σopt), imaginary (εi), and real (εr) parts of the complex dielectric constant (ε) and lattice dielectric constant (εL) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.

Design and Implementation of High Precision Temperature Measurement Unit

NASA Astrophysics Data System (ADS)

Zeng, Xianzhen; Yu, Weiyu; Zhang, Zhijian; Liu, Hancheng

2018-03-01

Large-scale neutrino detector requires calibration of photomultiplier tubes (PMT) and electronic system in the detector, performed by plotting the calibration source with a group of designated coordinates in the acrylic sphere. Where the calibration source positioning is based on the principle of ultrasonic ranging, the transmission speed of ultrasonic in liquid scintillator of acrylic sphere is related to temperature. This paper presents a temperature measurement unit based on STM32L031 and single-line bus digital temperature sensor TSic506. The measurement data of the temperature measurement unit can help the ultrasonic ranging to be more accurate. The test results show that the temperature measurement error is within ±0.1°C, which satisfies the requirement of calibration source positioning. Take energy-saving measures, with 3.7V/50mAH lithium battery-powered, the temperature measurement unit can work continuously more than 24 hours.

Structural, magnetic, and magnetocaloric properties of bilayer manganite La1.38Sr1.62Mn2O7

NASA Astrophysics Data System (ADS)

Yang, Yu-E.; Xie, Yunfei; Xu, Lisha; Hu, Dazhi; Ma, Chunlan; Ling, Langsheng; Tong, Wei; Pi, Li; Zhang, Yuheng; Fan, Jiyu

2018-04-01

In this study, we investigated the structural, magnetic phase transition, and magnetocaloric properties of bilayer perovskite manganite La1.38Sr1.62Mn2O7 based on X-ray diffraction, electron paramagnetic resonance, and temperature-/magnetic field-dependent magnetization measurements. The structural characterization results showed the prepared sample had a tetragonal structure with the space group I4/mmm. The Curie temperature was determined as 114 K in the magnetization studies and a second-order paramagnetic-ferromagnetic transition was confirmed by the Arrott plot, which showed that the slopes were positive for all the curves. According to the variation in the electron paramagnetic resonance spectrum, we detected obvious electronic phase separation across a broad temperature range from 220 to 80 K in this magnetic material, thereby indicating that the paramagnetic and ferromagnetic phases coexist above as well as below the Curie temperature. Based on a plot of the isothermal magnetization versus the magnetic applied field, we deduced the maximum magnetic entropy change, which only reached 1.89 J/kg.K under an applied magnetic field of 7.0 T. These theoretical investigations indicated that in addition to the magnetoelastic couplings and electron interaction, electronic phase separation and anisotropic exchange interactions also affect the magnetic entropy changes in this bilayer manganite.

The effect of heat treatment on structural and electronic properties of niobium nitride prepared by a thermal diffusion method

DOE PAGES

Farha, Ashraf Hassan; Ozkendir, Osman Murat; Elsayed-Ali, Hani E.; ...

2016-11-15

NbN coatings are prepared onto Nb substrate by thermal diffusion at high temperatures. The formation of NbN coating by thermal diffusion was studied in the range of 1250-1500 °C at constant nitrogen background gas pressure (1.3x10 -3 Pa) and processing time (180 min). The electronic and crystal structures of the NbN coatings were investigated. It was found that nitrogen diffuses into Nb forming the Nb-N solid solution (bcc) a-NbN phase that starts to appear above 1250 °C. Increasing the processing temperature gives richer a-phase concentration. Besides, X-ray absorption spectroscopy (XAS) was performed to study the electronic structure of the NbNmore » layer. The results of the electronic structural study corroborate the crystal structural analysis. The Nb M 3,2 edge X-ray absorption spectroscopy (XAS) spectrum shows strong temperature dependence. At the highest processing temperature (1500 °C), the number of d holes increased. Nitrogen diffusion into Nb is resulting to increase electrostatic interaction between d electron and core hole. Lastly, for the studied conditions, only the α-NbN was observed in the X-ray diffraction patterns.« less

The effect of heat treatment on structural and electronic properties of niobium nitride prepared by a thermal diffusion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farha, Ashraf Hassan; Ozkendir, Osman Murat; Elsayed-Ali, Hani E.

NbN coatings are prepared onto Nb substrate by thermal diffusion at high temperatures. The formation of NbN coating by thermal diffusion was studied in the range of 1250-1500 °C at constant nitrogen background gas pressure (1.3x10 -3 Pa) and processing time (180 min). The electronic and crystal structures of the NbN coatings were investigated. It was found that nitrogen diffuses into Nb forming the Nb-N solid solution (bcc) a-NbN phase that starts to appear above 1250 °C. Increasing the processing temperature gives richer a-phase concentration. Besides, X-ray absorption spectroscopy (XAS) was performed to study the electronic structure of the NbNmore » layer. The results of the electronic structural study corroborate the crystal structural analysis. The Nb M 3,2 edge X-ray absorption spectroscopy (XAS) spectrum shows strong temperature dependence. At the highest processing temperature (1500 °C), the number of d holes increased. Nitrogen diffusion into Nb is resulting to increase electrostatic interaction between d electron and core hole. Lastly, for the studied conditions, only the α-NbN was observed in the X-ray diffraction patterns.« less

Conductance of a quantum wire at low electron density

NASA Astrophysics Data System (ADS)

Matveev, Konstantin

2006-03-01

We study the transport of electrons through a long quantum wire connecting two bulk leads. As the electron density in the wire is lowered, the Coulomb interactions lead to short-range crystalline ordering of electrons. In this Wigner crystal state the spins of electrons form an antiferromagnetic Heisenberg spin chain with exponentially small exchange coupling J. Inhomogeneity of the electron density due to the coupling of the wire to the leads results in violation of spin-charge separation in the device. As a result the spins affect the conductance of the wire. At zero temperature the low-energy spin excitations propagate freely through the wire, and its conductance remains 2e^2/h. At finite temperature some of the spin excitations are reflected by the wire and contribute to its resistance. Since the energy of the elementary excitations in the spin chain (spinons) cannot exceed πJ/2, the conductance of the wire acquires an exponentially small negative correction δG - (-πJ/2T) at low temperatures T J. At higher temperatures, T J, most of the spin excitations in the leads are reflected by the wire, and the conductance levels off at a new universal value e^2/h. This result is consistent with experimental observations of a mini-plateau of conductance at e^2/h in quantum wires in the absence of magnetic field.

HALT to qualify electronic packages: a proof of concept

NASA Astrophysics Data System (ADS)

Ramesham, Rajeshuni

2014-03-01

A proof of concept of the Highly Accelerated Life Testing (HALT) technique was explored to assess and optimize electronic packaging designs for long duration deep space missions in a wide temperature range (-150°C to +125°C). HALT is a custom hybrid package suite of testing techniques using environments such as extreme temperatures and dynamic shock step processing from 0g up to 50g of acceleration. HALT testing used in this study implemented repetitive shock on the test vehicle components at various temperatures to precipitate workmanship and/or manufacturing defects to show the weak links of the designs. The purpose is to reduce the product development cycle time for improvements to the packaging design qualification. A test article was built using advanced electronic package designs and surface mount technology processes, which are considered useful for a variety of JPL and NASA projects, i.e. (surface mount packages such as ball grid arrays (BGA), plastic ball grid arrays (PBGA), very thin chip array ball grid array (CVBGA), quad flat-pack (QFP), micro-lead-frame (MLF) packages, several passive components, etc.). These packages were daisy-chained and independently monitored during the HALT test. The HALT technique was then implemented to predict reliability and assess survivability of these advanced packaging techniques for long duration deep space missions in much shorter test durations. Test articles were built using advanced electronic package designs that are considered useful in various NASA projects. All the advanced electronic packages were daisychained independently to monitor the continuity of the individual electronic packages. Continuity of the daisy chain packages was monitored during the HALT testing using a data logging system. We were able to test the boards up to 40g to 50g shock levels at temperatures ranging from +125°C to -150°C. The HALT system can deliver 50g shock levels at room temperature. Several tests were performed by subjecting the test boards to various g levels ranging from 5g to 50g, test durations of 10 minutes to 60 minutes, hot temperatures of up to +125°C and cold temperatures down to -150°C. During the HALT test, electrical continuity measurements of the PBGA package showed an open-circuit, whereas the BGA, MLF, and QFPs showed signs of small variations of electrical continuity measurements. The electrical continuity anomaly of the PBGA occurred in the test board within 12 hours of commencing the accelerated test. Similar test boards were assembled, thermal cycled independently from -150°C to +125°C and monitored for electrical continuity through each package design. The PBGA package on the test board showed an anomalous electrical continuity behavior after 959 thermal cycles. Each thermal cycle took around 2.33 hours, so that a total test time to failure of the PBGA was 2,237 hours (or ~3.1 months) due to thermal cycling alone. The accelerated technique (thermal cycling + shock) required only 12 hours to cause a failure in the PBGA electronic package. Compared to the thermal cycle only test, this was an acceleration of ~186 times (more than 2 orders of magnitude). This acceleration process can save significant time and resources for predicting the life of a package component in a given environment, assuming the failure mechanisms are similar in both the tests. Further studies are in progress to make systematic evaluations of the HALT technique on various other advanced electronic packaging components on the test board. With this information one will be able to estimate the number of mission thermal cycles to failure with a much shorter test program. Further studies are in progress to make systematic study of various components, constant temperature range for both the tests. Therefore, one can estimate the number of hours to fail in a given thermal and shock levels for a given test board physical properties.

EHW Approach to Temperature Compensation of Electronics

NASA Technical Reports Server (NTRS)

Stoica, Adrian

2004-01-01

Efforts are under way to apply the concept of evolvable hardware (EHW) to compensate for variations, with temperature, in the operational characteristics of electronic circuits. To maintain the required functionality of a given circuit at a temperature above or below the nominal operating temperature for which the circuit was originally designed, a new circuit would be evolved; moreover, to obtain the required functionality over a very wide temperature range, there would be evolved a number of circuits, each of which would satisfy the performance requirements over a small part of the total temperature range. The basic concepts and some specific implementations of EHW were described in a number of previous NASA Tech Briefs articles, namely, "Reconfigurable Arrays of Transistors for Evolvable Hardware" (NPO-20078), Vol. 25, No. 2 (February 2001), page 36; Evolutionary Automated Synthesis of Electronic Circuits (NPO- 20535), Vol. 26, No. 7 (July 2002), page 37; "Designing Reconfigurable Antennas Through Hardware Evolution" (NPO-20666), Vol. 26, No. 7 (July 2002), page 38; "Morphing in Evolutionary Synthesis of Electronic Circuits" (NPO-20837), Vol. 26, No. 8 (August 2002), page 31; "Mixtrinsic Evolutionary Synthesis of Electronic Circuits" (NPO-20773) Vol. 26, No. 8 (August 2002), page 32; and "Synthesis of Fuzzy-Logic Circuits in Evolvable Hardware" (NPO-21095) Vol. 26, No. 11 (November 2002), page 38. To recapitulate from the cited prior articles: EHW is characterized as evolutionary in a quasi-genetic sense. The essence of EHW is to construct and test a sequence of populations of circuits that function as incrementally better solutions of a given design problem through the selective, repetitive connection and/or disconnection of capacitors, transistors, amplifiers, inverters, and/or other circuit building blocks. The connection and disconnection can be effected by use of field-programmable transistor arrays (FPTAs). The evolution is guided by a search-andoptimization algorithm (in particular, a genetic algorithm) that operates in the space of possible circuits to find a circuit that exhibits an acceptably close approximation of the desired functionality. The evolved circuits can be tested by mathematical modeling (that is, computational simulation) only, tested in real hardware, or tested in combinations of computational simulation and real hardware.

Cryogenic Behavior of the High Temperature Crystal Oscillator PX-570

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Scherer, Steven

2011-01-01

Microprocessors, data-acquisition systems, and electronic controllers usually require timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that utilize crystal oscillators due to availability, cost, ease of operation, and accuracy. Stability of these oscillators, i.e. crystal characteristics, is usually governed, amongst other things, by the ambient temperature. Operation of these devices under extreme temperatures requires, therefore, the implementation of some temperature-compensation mechanism either through the manufacturing process of the oscillator part or in the design of the circuit to maintain stability as well as accuracy. NASA future missions into deep space and planetary exploration necessitate operation of electronic instruments and systems in environments where extreme temperatures along with wide-range thermal swings are countered. Most of the commercial devices are very limited in terms of their specified operational temperature while very few custom-made and military-grade parts have the ability to operate in a slightly wider range of temperature. Thus, it is becomes mandatory to design and develop circuits that are capable of operation efficiently and reliably under the space harsh conditions. This report presents the results obtained on the evaluation of a new (COTS) commercial-off-the-shelf crystal oscillator under extreme temperatures. The device selected for evaluation comprised of a 10 MHz, PX-570-series crystal oscillator. This type of device was recently introduced by Vectron International and is designed as high temperature oscillator [1]. These parts are fabricated using proprietary manufacturing processes designed specifically for high temperature and harsh environment applications [1]. The oscillators have a wide continuous operating temperature range; making them ideal for use in military and aerospace industry, industrial process control, geophysical fields, avionics, and engine control. They exhibit low jitter and phase noise, consume little power, and are suited for high shock and vibration applications. The unique package design of these crystal oscillators offers a small ceramic package footprint, as well as providing both through-hole mounting and surface mount options.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rowland, Clare E.; Fedin, Igor; Diroll, Benjamin T.

Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology upmore » to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.« less

Principle of radial transport in low temperature annular plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yunchao, E-mail: yunchao.zhang@anu.edu.au; Charles, Christine; Boswell, Rod

2015-07-15

Radial transport in low temperature annular plasmas is investigated theoretically in this paper. The electrons are assumed to be in quasi-equilibrium due to their high temperature and light inertial mass. The ions are not in equilibrium and their transport is analyzed in three different situations: a low electric field (LEF) model, an intermediate electric field (IEF) model, and a high electric field (HEF) model. The universal IEF model smoothly connects the LEF and HEF models at their respective electric field strength limits and gives more accurate results of the ion mobility coefficient and effective ion temperature over the entire electricmore » field strength range. Annular modelling is applied to an argon plasma and numerical results of the density peak position, the annular boundary loss coefficient and the electron temperature are given as functions of the annular geometry ratio and Paschen number.« less

Finite temperature static charge screening in quantum plasmas

NASA Astrophysics Data System (ADS)

Eliasson, B.; Akbari-Moghanjoughi, M.

2016-07-01

The shielding potential around a test charge is calculated, using the linearized quantum hydrodynamic formulation with the statistical pressure and Bohm potential derived from finite temperature kinetic theory, and the temperature effects on the force between ions is assessed. The derived screening potential covers the full range of electron degeneracy in the equation of state of the plasma electrons. An attractive force between shielded ions in an arbitrary degenerate plasma exists below a critical temperature and density. The effect of the temperature on the screening potential profile qualitatively describes the ion-ion bound interaction strength and length variations. This may be used to investigate physical properties of plasmas and in molecular-dynamics simulations of fermion plasma. It is further shown that the Bohm potential including the kinetic corrections has a profound effect on the Thomson scattering cross section in quantum plasmas with arbitrary degeneracy.

Electron impact study of potassium hydroxide

NASA Technical Reports Server (NTRS)

Vuskovic, L.; Trajmar, S.

1979-01-01

An attempt is made to measure the sum of the elastic, rotational and vibrational scattering of electrons by KOH at low impact energies (5 to 20 eV) at angles from 10 to 120 deg. Energy loss spectra taken in the 0 to 18 eV range using an electron impact spectrometer are used to identify the species contributing to electric scattering. At temperatures between 300 and 500 C, only inelastic spectral features belonging to water are detected, while at temperatures from 500 to 800 C strong atomic K lines, indicative of molecular dissociation, and H2 energy loss features become prominent. No features attributable to KOH, the KOH dimer, O2 or potassium oxides were observed, due to the effects of the dissociation products, and it is concluded that another technique will have to be developed in order to measure electron scattering by KOH.

Optical detection of symmetric and antisymmetric states in double quantum wells at room temperature

NASA Astrophysics Data System (ADS)

Marchewka, M.; Sheregii, E. M.; Tralle, I.; Marcelli, A.; Piccinini, M.; Cebulski, J.

2009-09-01

We studied the optical reflectivity of a specially grown double quantum well (DQW) structure characterized by a rectangular shape and a high electron density at room temperature. Assuming that the QWs depth is known, reflectivity spectra in the mid-IR range allow to carry out the precise measurements of the SAS-gap values (the energy gap between the symmetric and anti-symmetric states) and the absolute energies of both symmetric and antisymmetric electron states. The results of our experiments are in favor of the existence of the SAS splitting in the DQWs at room temperature. Here we have shown that the SAS gap increases proportionally to the subband quantum number and the optical electron transitions between symmetric and antisymmetric states belonging to different subbands are allowed. These results were used for interpretation of the beating effect in the Shubnikov-de Haas (SdH) oscillations at low temperatures (0.6 and 4.2 K). The approach to the calculation of the Landau-levels energies for DQW structures developed earlier [D. Ploch , Phys. Rev. B 79, 195434 (2009)] is used for the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to explain the beating effect in the SdH oscillations, one should introduce two different quasi-Fermi levels characterizing the two electron subsystems regarding symmetry properties of their wave functions, symmetric and antisymmetric ones. These states are not mixed neither by electron-electron interaction nor probably by electron-phonon interaction.

Design and first plasma measurements of the ITER-ECE prototype radiometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Austin, M. E.; Brookman, M. W.; Rowan, W. L.

2016-11-15

On ITER, second harmonic optically thick electron cyclotron emission (ECE) in the range of 220-340 GHz will supply the electron temperature (T{sub e}). To investigate the requirements and capabilities prescribed for the ITER system, a prototype radiometer covering this frequency range has been developed by Virginia Diodes, Inc. The first plasma measurements with this instrument have been carried out on the DIII-D tokamak, with lab bench tests and measurements of third through fifth harmonic ECE from high T{sub e} plasmas. At DIII-D the instrument shares the transmission line of the Michelson interferometer and can simultaneously acquire data. Comparison of themore » ECE radiation temperature from the absolutely calibrated Michelson and the prototype receiver shows that the ITER radiometer provides accurate measurements of the millimeter radiation across the instrument band.« less

Innovative Technology Transfer Partnerships

NASA Technical Reports Server (NTRS)

Kohler, Jeff

2004-01-01

The National Aeronautics and Space Administration (NASA) seeks to license its Advanced Tire and Strut Pressure Monitor (TSPM) technology. The TSPM is a handheld system to accurately measure tire and strut pressure and temperature over a wide temperature range (20 to 120 OF), as well as improve personnel safety. Sensor accuracy, electronics design, and a simple user interface allow operators quick, easy access to required measurements. The handheld electronics, powered by 12-VAC or by 9-VDC batteries, provide the user with an easy-to-read visual display of pressure/temperature or the streaming of pressure/temperature data via an RS-232 interface. When connected to a laptop computer, this new measurement system can provide users with automated data recording and trending, eliminating the chance for data hand-recording errors. In addition, calibration software allows for calibration data to be automatically utilized for the generation of new data conversion equations, simplifying the calibration processes that are so critical to reliable measurements. The design places a high-accuracy pressure sensor (also used as a temperature sensor) as close to the tire or strut measurement location as possible, allowing the user to make accurate measurements rapidly, minimizing the amount of high-pressure volumes, and allowing reasonable distance between the tire or strut and the operator. The pressure sensor attaches directly to the pressure supply/relief valve on the tire and/or strut, with necessary electronics contained in the handheld enclosure. A software algorithm ensures high accuracy of the device over the wide temperature range. Using the pressure sensor as a temperature sensor permits measurement of the actual temperature of the pressurized gas. This device can be adapted to create a portable calibration standard that does not require thermal conditioning. This allows accurate pressure measurements without disturbing the gas temperature. In-place calibration can save considerable time and money and is suitable in many process applications throughout industry.

Low temperature tungsten spectroscopy on a Penning Ionization Discharge

NASA Astrophysics Data System (ADS)

Kumar, Deepak; Englesbe, Alexander; Stutman, Dan; Finkenthal, Michael

2011-10-01

Complete Tungsten divertor operation is being planned on many tokamaks including Tore Supra and ITER. Thus, low temperature tungsten spectroscopy is important for aiding the divertor diagnostics on larger machines. A Penning Ionization Discharge (PID) at the Johns Hopkins University produces steady state plasmas with Te ~ 2 eV, ne ~1013 cm-3 and a fast electron fraction at ~ 10 s eV. Similar bi-Maxwellian distributions, but with slightly higher electron temperatures, are found in the divertor plasmas of tokamaks. The two significant populating mechanisms for higher charge states in the PID are: (a) collisional excitation from bulk electrons, and (b) inner shell ionization from the fast electrons. The PID is diagnosed in a wide wavelength range - XUV, VUV and visible, to differentiate the two populating mechanisms. W is introduced in the PID by the sputtering of cathodes made of CuW alloy. Spectral emission from significantly higher charge states of W (up to W IV) has been observed in the experiment. This poster will describe results indicating the populating mechanism of W ions and also describe plans on upgrading the experiment to achieve higher temperatures which are closer to the divertor conditions. Supported by USDOE.

Development of a spectroscopic technique for simultaneous magnetic field, electron density, and temperature measurements in ICF-relevant plasmas.

PubMed

Dutra, E C; Koch, J A; Presura, R; Angermeier, W A; Darling, T; Haque, S; Mancini, R C; Covington, A M

2016-11-01

Spectroscopic techniques in the visible range are often used in plasma experiments to measure B-field induced Zeeman splitting, electron densities via Stark broadening, and temperatures from Doppler broadening. However, when electron densities and temperatures are sufficiently high, the broadening of the Stark and Doppler components can dominate the emission spectra and obscure the Zeeman component. In this research, we are developing a time-resolved multi-axial technique for measuring the Zeeman, Stark, and Doppler broadened line emission of dense magnetized plasmas for Z-pinch and Dense Plasma Focus (DPF) accelerators. The line emission is used to calculate the electron densities, temperatures, and B-fields. In parallel, we are developing a line-shape modeling code that incorporates the broadening effects due to Stark, Doppler, and Zeeman effects for dense magnetized plasma. This manuscript presents the details of the experimental setup and line shape code, along with the results obtained from an Al iii doublet at the University of Nevada, Reno at Nevada Terawatt Facility. Future tests are planned to further evaluate the technique and modeling on other material wire array, gas puff, and DPF platforms.

Vibrational renormalisation of the electronic band gap in hexagonal and cubic ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engel, Edgar A., E-mail: eae32@cam.ac.uk; Needs, Richard J.; Monserrat, Bartomeu

2015-12-28

Electron-phonon coupling in hexagonal and cubic water ice is studied using first-principles quantum mechanical methods. We consider 29 distinct hexagonal and cubic ice proton-orderings with up to 192 molecules in the simulation cell to account for proton-disorder. We find quantum zero-point vibrational corrections to the minimum electronic band gaps ranging from −1.5 to −1.7 eV, which leads to improved agreement between calculated and experimental band gaps. Anharmonic nuclear vibrations play a negligible role in determining the gaps. Deuterated ice has a smaller band-gap correction at zero-temperature of −1.2 to −1.4 eV. Vibrations reduce the differences between the electronic band gapsmore » of different proton-orderings from around 0.17 eV to less than 0.05 eV, so that the electronic band gaps of hexagonal and cubic ice are almost independent of the proton-ordering when quantum nuclear vibrations are taken into account. The comparatively small reduction in the band gap over the temperature range 0 − 240 K of around 0.1 eV does not depend on the proton ordering, or whether the ice is protiated or deuterated, or hexagonal, or cubic. We explain this in terms of the atomistic origin of the strong electron-phonon coupling in ice.« less

A model of the SO2 atmosphere and ionosphere of Io

NASA Technical Reports Server (NTRS)

Kumar, S.

1980-01-01

The calculations of thermal structure for an SO2 atmosphere of Io lead to exospheric temperatures in 800-1200 K range. The Pioneer 10 electron density profiles can be fit with an SO2 surface density of 1.2 x 10 to the 11th per cu cm at 5:30 pm local time and exosphere temperature of 1030 K. Low energy electrons provide the major ionization source but the solar UV absorption dominates the heating of the atmosphere due to the long wavelength absorption threshold of SO2 and large absorption cross sections.

Measurement of threshold temperature effects in dissociative electron attachment to HI and DI

NASA Technical Reports Server (NTRS)

Chutjian, A.; Alajajian, S. H.; Man, K.-F.

1990-01-01

From accurate spectroscopic constants it is found that the thermal dissociative-attachment process (DA) in DI should be exothermic only for rotational levels J greater than 8 in v = O. Here, measurement of an enhancement of DA with rotational temperature T in the range 298-468 K is reported. The effect is easily accounted for by the increase in total fractional population of excited J levels in DI relative to HI. The effect affords a rotational analog to the use of vibrationally excited molecules (e.g., HCl) in a plasma to control electron conduction.

Near-infrared and ultraviolet spectrophotometry of the young planetary nebula Hubble 12

NASA Technical Reports Server (NTRS)

Rudy, Richard J.; Rossano, George S.; Erwin, Peter; Puetter, R. C.; Feibelman, Walter A.

1993-01-01

The young planetary nebula Hubble 12 is observed using near-IR and UV spectrophotometry. The brightness of the O I lines, which is greater than in any other planetary nebula yet measured, indicates that fluorescent excitation by stellar continuum is the principal mechanism generating these lines. Extinction, electron density, and electron temperature are determined using infrared measurements combined with UV data and published optical observations. The range in extinction, density, and temperature implies that, within the ionized region, pockets of emission with distinctly different conditions exist. Logarithmic abundances for helium, oxygen, and sulfur are presented.

Theory of High-T{sub c} Superconducting Cuprates Based on Experimental Evidence

DOE R&D Accomplishments Database

Abrikosov, A. A.

1999-12-10

A model of superconductivity in layered high-temperature superconducting cuprates is proposed, based on the extended saddle point singularities in the electron spectrum, weak screening of the Coulomb interaction and phonon-mediated interaction between electrons plus a small short-range repulsion of Hund's, or spin-fluctuation, origin. This permits to explain the large values of T{sub c}, features of the isotope effect on oxygen and copper, the existence of two types of the order parameter, the peak in the inelastic neutron scattering, the positive curvature of the upper critical field, as function of temperature etc.

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.

PubMed

Ratajczak, J; Łaszcz, A; Czerwinski, A; Katcki, J; Phillipp, F; Van Aken, P A; Reckinger, N; Dubois, E

2010-03-01

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700 degrees C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500 degrees C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700 degrees C.

Electronic control circuits: A compilation

NASA Technical Reports Server (NTRS)

1973-01-01

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

Electron beam irradiation effects on ethylene-tetrafluoroethylene copolymer films

NASA Astrophysics Data System (ADS)

Nasef, Mohamed Mahmoud; Saidi, Hamdani; Dahlan, Khairul Zaman M.

2003-12-01

The effects of electron beam irradiation on ethylene-tetrafluoroethylene copolymer (ETFE) films were studied. Samples were irradiated in air at room temperature by a universal electron beam accelerator for doses ranging from 100 to 1200 kGy. Irradiated samples were investigated with respect to their chemical structure, thermal characteristics, crystallinity and mechanical properties using FTIR, differential scanning calorimeter (DSC) and universal mechanical tester. The interaction of electron irradiation with ETFE films was found to induce dose-dependent changes in all the investigated properties. A mechanism for electron-induced reactions is proposed to explain the structure-property behaviour of irradiated ETFE films.

Fabrication of ZnS nanoparticle chains on a protein template

PubMed Central

Hulleman, J.; Kim, S. M.; Tumkur, T.; Rochet, J.-C.; Stach, E.; Stanciu, L.

2011-01-01

In the present study, we have exploited the properties of a fibrillar protein for the template synthesis of zinc sulfide (ZnS) nanoparticle chains. The diameter of the ZnS nanoparticle chains was tuned in range of ~30 to ~165 nm by varying the process variables. The nanoparticle chains were characterized by field emission scanning electron microscopy, UV–Visible spectroscopy, transmission electron microscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The effect of incubation temperature on the morphology of the nanoparticle chains was also studied. PMID:21804765

Electron Plasmas Cooled by Cyclotron-Cavity Resonance

DOE PAGES

Povilus, A. P.; DeTal, N. D.; Evans, L. T.; ...

2016-10-21

We observe that high-Q electromagnetic cavity resonances increase the cyclotron cooling rate of pure electron plasmas held in a Penning-Malmberg trap when the electron cyclotron frequency, controlled by tuning the magnetic field, matches the frequency of standing wave modes in the cavity. For certain modes and trapping configurations, this can increase the cooling rate by factors of 10 or more. In this paper, we investigate the variation of the cooling rate and equilibrium plasma temperatures over a wide range of parameters, including the plasma density, plasma position, electron number, and magnetic field.

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics.

PubMed

Ban, Seok-Gyu; Kim, Kyung-Tae; Choi, Byung Doo; Jo, Jeong-Wan; Kim, Yong-Hoon; Facchetti, Antonio; Kim, Myung-Gil; Park, Sung Kyu

2017-08-09

Although transparent conducting oxides (TCOs) have played a key role in a wide range of solid-state electronics from conventional optoelectronics to emerging electronic systems, the processing temperature and conductivity of solution-processed materials seem to be far exceeding the thermal limitations of soft materials and insufficient for high-perfomance large-area systems, respectively. Here, we report a strategy to form highly conductive and scalable solution-processed oxide materials and their successful translation into large-area electronic applications, which is enabled by photoassisted postfunctionalization at low temperature. The low-temperature fabrication of indium-tin-oxide (ITO) thin films was achieved by using photoignited combustion synthesis combined with photoassisted reduction process under hydrogen atmosphere. It was noteworthy that the photochemically activated hydrogens on ITO surface could be triggered to facilitate highly crystalline oxygen deficient structure allowing significant increase of carrier concentration and mobility through film microstructure modifications. The low-temperature postfunctionalized ITO films demonstrated conductivity of >1607 S/cm and sheet resistance of <104 Ω/□ under the process temperature of less than 300 °C, which are comparable to those of vacuum-deposited and high-temperature annealed ITO films. Based on the photoassisted postfunctionalization route, all-solution-processed transparent metal-oxide thin-film-transistors and large-area integrated circuits with the ITO bus lines were demonstrated, showing field-effect mobilities of >6.5 cm 2 V -1 s -1 with relatively good operational stability and oscillation frequency of more than 1 MHz in 7-stage ring oscillators, respectively.

Temperature measurements during high flux ion beam irradiations

DOE PAGES

Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; ...

2016-02-16

A systematic study of the ion beam heating effect was performed in a temperature range of –170 to 900 °C using a 10 MeV Au 3+ ion beam and a Yttria stabilized Zirconia (YSZ) sample at a flux of 5.5 × 10 12 cm –2 s –1. Different geometric configurations of beam, sample, thermocouple positioning, and sample holder were compared to understand the heat/charge transport mechanisms responsible for the observed temperature increase. The beam heating exhibited a strong dependence on the background (initial) sample temperature with the largest temperature increases occurring at cryogenic temperatures and decreasing with increasing temperature. Comparisonmore » with numerical calculations suggests that the observed heating effect is, in reality, a predominantly electronic effect and the true temperature rise is small. Furthermore, a simple model was developed to explain this electronic effect in terms of an electrostatic potential that forms during ion irradiation. Such an artificial beam heating effect is potentially problematic in thermostated ion irradiation and ion beamanalysis apparatus, as the operation of temperature feedback systems can be significantly distorted by this effect.« less

Highly mismatched GaN1-x Sb x alloys: synthesis, structure and electronic properties

NASA Astrophysics Data System (ADS)

Yu, K. M.; Sarney, W. L.; Novikov, S. V.; Segercrantz, N.; Ting, M.; Shaw, M.; Svensson, S. P.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

2016-08-01

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaN x Sb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-x Sb x HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-x Sb x HMA over the entire composition range is well described by a modified BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaN x Sb1-x is general and is applicable to any HMA.

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

Combined effect of dopant and electron beam-irradiation on phase transition in lithium potassium sulphate

NASA Astrophysics Data System (ADS)

Kassem, M. E.; Gaafar, M.; Abdel Gawad, M. M. H.; El-Muraikhi, M.; Ragab, I. M.

2004-02-01

Thermodynamic studies of polycrystalline ruthenium (Ru) doped LiKSO 4 have been made for different concentrations of Ru in the range 0%, 0.1%, 0.2%, 0.5%, 1%, 2%, 3% by weight. The thermal behaviour has been investigated using a differential scanning calorimeter in the vicinity of high temperature phases. From this, the effect of electron beam-irradiation on the thermal properties of these polycrystalline samples has been studied. The results showed a change in the transition temperature Tc, as well as the value of specific heat CPmax at the transition temperature due to the change in Ru content and irradiation energies. The change of enthalpy and entropy of the polycrystalline have been estimated numerically.

Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna

NASA Astrophysics Data System (ADS)

Skoblin, Grigory; Sun, Jie; Yurgens, August

2018-02-01

We report on a prototype graphene radiation detector based on the thermoelectric effect. We used a split top gate to create a p-n junction in the graphene, thereby making an effective thermocouple to read out the electronic temperature in the graphene. The electronic temperature is increased due to the AC currents induced in the graphene from the incoming radiation, which is first received by an antenna and then directed to the graphene via the top-gate capacitance. With the exception of the constant DC voltages applied to the gate, the detector does not need any bias and is therefore very simple to use. The measurements showed a clear response to microwaves at 94 GHz with the signal being almost temperature independent in the 4-100 K temperature range. The optical responsivity reached ˜700 V/W.

Power Modulation Investigation for High Temperature (175-200 degrees Celcius) Automotive Application

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCluskey, F. P.

Hybrid electric vehicles were re-introduced in the late 1990s after a century dominated by purely internal combustion powered engines[1]. Automotive players, such as GM, Ford, DaimlerChrysler, Honda, and Toyota, together with major energy producers, such as BPAmoco, were the major force in the development of hybrid electric vehicles. Most notable was the development by Toyota of its Prius, which was launched in Japan in 1997 and worldwide in 2001. The shift to hybrids was driven by the fact that the sheer volume of vehicles on the road had begun to tax the ability of the environment to withstand the pollutionmore » of the internal combustion engine and the ability of the fossil fuel industry to produce a sufficient amount of refined gasoline. In addition, the number of vehicles was anticipated to rise exponentially with the increasing affluence of China and India. Over the last fifteen years, major advances have been made in all the technologies essential to hybrid vehicle success, including batteries, motors, power control and conditioning electronics, regenerative braking, and power sources, including fuel cells. Current hybrid electric vehicles are gasoline internal combustion--electric motor hybrids. These hybrid electric vehicles range from micro-hybrids, where a stop/start system cuts the engine while the vehicle is stopped, and mild hybrids where the stop/start system is supplemented by regenerative braking and power assist, to full hybrids where the combustion motor is optimized for electric power production, and there is full electric drive and full regenerative braking. PSA Peugeot Citroen estimates the increased energy efficiency will range from 3-6% for the micro-hybrids to 15-25% for the full hybrids.[2] Gasoline-electric hybrids are preferred in US because they permit long distance travel with low emissions and high gasoline mileage, while still using the existing refueling infrastructure. One of the most critical areas in which technology has been advancing has been the development of electronics that can operate in the high temperature environments present in hybrid vehicles. The temperatures under the hood for a gasoline-electric hybrid vehicle are comparable to those for traditional internal combustion engines. This is known to be a difficult environment with respect to commercial-grade electronics, as there are surface and ambient temperatures ranging from 125 C to 175 C. In addition, some hybrid drive electronics are placed in even harsher environments, such as on or near the brakes, where temperatures can reach 250 C. Furthermore, number of temperature cycles experienced by electronics in a hybrid vehicle is different from that experienced in a traditional vehicle. A traditional internal combustion vehicle will have the engine running for longer periods, whereas a mild or micro-hybrid engine will experience many more starts and stops.[3] This means that hybrid automotive electronics will undergo more cycles of a potential wider temperature cycle than standard automotive electronics, which in turn see temperature cycles of 2 to 3 times the magnitude of the {Delta}T = 50 C-75 C experienced by commercial-grade electronics. This study will discuss the effects of these harsh environments on the failure mechanisms and ultimate reliability of electronic systems developed for gasoline-electric hybrid vehicles. In addition, it will suggest technologies and components that can reasonably be expected to perform well in these environments. Finally, it will suggest areas where further research is needed or desirable. Areas for further research will be highlighted in bold, italic type. It should be noted that the first area where further research is desirable is in developing a clearer understanding of the actual hybrid automotive electronics environment and how to simulate it through accelerated testing, thus: Developing specific mission profiles and accelerated testing protocols for the underhood environment for hybrid cars, as has previously been done for gasoline-powered vehicles, is an important area for further study.« less

Numerical characterization of the edge transport conditions and limiter fluxes of the HIDRA stellarator

NASA Astrophysics Data System (ADS)

Marcinko, Steven; Curreli, Davide

2018-02-01

The Hybrid Illinois Device for Research and Applications (HIDRA) is a new device for education and Plasma-Material Interaction research at the University of Illinois at Urbana-Champaign. In advance of its first operational campaign, EMC3-EIRENE simulations have been run on the device. EMC3-EIRENE has been modified to calculate a per-plasma-cell relaxed Bohm-like diffusivity simultaneously with the electron temperature at each iteration. In our characterization, the electron temperature, diffusivity, heat fluxes, and particle fluxes have been obtained for varying power levels on a HIDRA magnetic grid, and scaling laws have been extracted, using constraints from previous experimental data taken when the device was operated in Germany (WEGA facility). Peak electron temperatures and heat fluxes were seen to follow a power-law dependence on the deposited radiofrequency (RF) power of type f (PR F)∝a PRF b , with typical exponents in the range of b ˜0.55 to 0.60. Higher magnetic fields have the tendency to linearize the heat flux dependence on the RF power, with exponents in the range of b ˜ 0.75. Particle fluxes are seen to saturate first, and then slightly decline for RF powers above 120 kW in the low-field case and 180 kW in the high-field case.

Metal-Insulator Transition in Epitaxial Pyrochlore Iridates Bi2Ir2O7 thin Films

NASA Astrophysics Data System (ADS)

Chu, Jiun-Haw; Liu, Jian; Yi, Di; Rayan-Serrao, C.; Suresha, S.; Marti, Xavi; Riggs, Scott; Shapiro, Max; Ian, Fisher; Ramesh, R.

2013-03-01

Recently there is a surge of interest in searching for topological order in correlated electronic systems such as transition metal oxides. The strong spin-orbit interaction of 5d electrons and the geometric frustration in the crystal lattice make the pyrochlore iridate(A2Ir2O7) an ideal candidate to achieve this goal. Pioneering experiments on bulk polycrystalline and single crystal samples revealed a temperature dependent metal-insulator transition coupled to a long range magnetic order, and the transition temperature can be tuned by either A-site ionic radius or an external pressure. In this talk we present our efforts to understand and control the metal-insulator transition and the underlying electronic structure of pyrochlore iridates via epitaxial Bi2Ir2O7 thin films. Bulk Bi2Ir2O7 is located at the metallic side of the phase diagram. However as the film's thickness decreases the transport evolves from a metallic to a strongly localized character. Resonant X-ray spectroscopy suggests that the density of states near Fermi level is dominated by the Ir Je ff =1/2 states. Intriguingly, the magnetoresistance shows a linear field dependence over a wide range of fields at low temperatures, which is possibly consistent with the existence of Dirac nodes.

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

NASA Astrophysics Data System (ADS)

Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Ismail, Razali

2018-05-01

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.

Wave-Particle Interactions Involving Correlated Electron Bursts and Whistler Chorus in Earth's Radiation Belts

NASA Astrophysics Data System (ADS)

Echterling, N.; Schriver, D.; Roeder, J. L.; Fennell, J. F.

2017-12-01

During the recovery phase of substorm plasma injections, the Van Allen Probes commonly observe events of quasi-periodic energetic electron bursts correlating with simultaneously detected upper-band, whistler-mode chorus emissions. These electron bursts exhibit narrow ranges of pitch angles (75-80° and 100-105°) and energies (20-40 keV). Electron cyclotron harmonic (ECH) emissions are also commonly detected, but typically do not display correlation with the electron bursts. To examine sources of free energy and the generation of these wave emissions, an observed electron velocity distribution on January 13, 2013 is used as the starting condition for a particle in cell (PIC) simulation. Effects of temperature anisotropy (perpendicular temperature greater than parallel temperature), the presence of a loss cone and a cold electron population on the generation of whistler and ECH waves are examined to understand wave generation and nonlinear interactions with the particle population. These nonlinear interactions produce energy diffusion along with strong pitch angle scattering into the loss cone on the order of milliseconds, which is faster than a typical bounce period of seconds. To examine the quasi-periodic nature of the electron bursts, a loss-cone recycling technique is implemented to model the effects of the periodic emptying of the loss cone and electron injection on the growth of whistler and ECH waves. The results of the simulations are compared to the Van Allen Probe observations to determine electron acceleration, heating and transport in Earth's radiation belts due to wave-particle interactions.

The Influence of Phonons and Phonon Decay on the Optical Properties of GaN

NASA Astrophysics Data System (ADS)

Song, D. Y.; Basavaraj, M.; Nikishin, S. A.; Holtz, M.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.

2006-03-01

The temperature dependences of vibrational and optical properties of high-quality GaN are studied using Raman and photoluminescence (PL) spectroscopies in the range 20 to 325 K. The Raman-active A1(LO) phonon has temperature dependence described well by combined two- and three-phonon decay. The temperature dependences of E2^2 phonon are almost entirely dominated by the thermal expansion, and the contribution of three-phonon decay process is very small throughout interested temperature range. The shallow neutral donor-bound exciton (D^0,X) and two free excitons (XA and XB) are observed at low temperatrue PL spectra. Also seen are two A1(LO) phonon sidebands (PSBs), originating from the XB free exciton, with the characteristic asymmetry attributed to interactions between discrete and continuum states. Analysis of the band-edge excitons reveals that energy gap shrinkage and exciton linewidths are completely described based on electron-phonon interactions with phonon properties consistent with the Raman analysis. First and second PSBs have temperature dependence associated with the A1(LO) phonon. The shift, broadening, and asymmetry of the PSBs are explained by Segall-Mahan theory adding the decay mechanism of A1(LO) phonon and the exciton broadening from electron-phonon interactions. Work at Texas Tech University supported by National Science Foundation grant ECS-0323640.

New multicomponent solder alloys of low melting pointfor low-cost commercial electronic assembly

NASA Astrophysics Data System (ADS)

Al-Ganainy, G. S.; Sakr, M. S.

2003-09-01

The requirements of the telecommunications, automobile, electronics and aircraft industries for non-toxic solders with melting points close to that of near-eutectic Pb-Sn alloys has led to the development of new Sn-Zn-In solder alloys. Differential thermal analysis (DTA) shows melting points of 198, 195, 190 and 185 +/- 2 °C for the alloys Sn-9Zn, Sn-9Zn-2In, Sn-9Zn-4In and Sn-9Zn-6In, respectively. An equation that fits the data relating the melting point to the In content in the solders is derived. The X-ray diffraction patterns are analyzed to determine the phases that exist in each solder. The stress-strain curves are studied in the temperature range from 90 to 130 °C for all the solders except for those that contain 4 wt% of In, where the temperature range continues to 150 °C. The work-hardening parameters, y (the yield stress), f (the fracture stress), and the parabolic work-hardening coefficient X, increase with increasing indium content in the solders at all working temperatures. They decrease with increasing working temperature for each solder, and show two relaxation stages only for the Sn-9Zn-4In solder around a temperature of 120 °C. (

Low-energy collisions between electrons and BeD+

NASA Astrophysics Data System (ADS)

Niyonzima, S.; Pop, N.; Iacob, F.; Larson, Å; Orel, A. E.; Mezei, J. Zs; Chakrabarti, K.; Laporta, V.; Hassouni, K.; Benredjem, D.; Bultel, A.; Tennyson, J.; Reiter, D.; Schneider, I. F.

2018-02-01

Multichannel quantum defect theory is applied in the treatment of the dissociative recombination and vibrational excitation processes for the BeD+ ion in the 24 vibrational levels of its ground electronic state ({{X}}{}1{{{Σ }}}+,{v}{{i}}+=0\\ldots 23). Three electronic symmetries of BeD** states ({}2{{\\Pi }}, {}2{{{Σ }}}+, and {}2{{Δ }}) are considered in the calculation of cross sections and the corresponding rate coefficients. The incident electron energy range is 10-5-2.7 eV and the electron temperature range is 100-5000 K. The vibrational dependence of these collisional processes is highlighted. The resulting data are useful in magnetic confinement fusion edge plasma modeling and spectroscopy, in devices with beryllium based main chamber materials, such as ITER and JET, and operating with the deuterium-tritium fuel mix. An extensive rate coefficients database is presented in graphical form and also by analytic fit functions whose parameters are tabulated in the supplementary material.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podlivaev, A. I., E-mail: AIPodlivayev@mephi.ru; Openov, L. A.

The initial stage of hydrogen desorption from fully hydrogenated carbon nanotubes (3.0) and (2.2) is numerically studied by the molecular dynamics method. The temperature dependence of the desorption rate is directly determined at T = 1800–2500 K. The characteristic desorption times are determined at temperatures outside this range by extrapolation. It is shown that hydrogen desorption leads to the appearance of electronic states in the band gap.

AMOLED (active matrix OLED) functionality and usable lifetime at temperature

NASA Astrophysics Data System (ADS)

Fellowes, David A.; Wood, Michael V.; Prache, Olivier; Jones, Susan

2005-05-01

Active Matrix Organic Light Emitting Diode (AMOLED) displays are known to exhibit high levels of performance, and these levels of performance have continually been improved over time with new materials and electronics design. eMagin Corporation developed a manually adjustable temperature compensation circuit with brightness control to allow for excellent performance over a wide temperature range. Night Vision and Electronic Sensors Directorate (US Army) tested the performance and survivability of a number of AMOLED displays in a temperature chamber over a range from -55°C to +85°C. Although device performance of AMOLEDs has always been its strong suit, the issue of usable display lifetimes for military applications continues to be an area of discussion and research. eMagin has made improvements in OLED materials and worked towards the development of a better understanding of usable lifetime for operation in a military system. NVESD ran luminance degradation tests of AMOLED panels at 50°C and at ambient to characterize the lifetime of AMOLED devices. The result is a better understanding of the applicability of AMOLEDs in military systems: where good fits are made, and where further development is needed.

Investigation of hot cracking resistance of 2205 duplex steel

NASA Astrophysics Data System (ADS)

Adamiec, J.; Ścibisz, B.

2010-02-01

Austenitic duplex steel of the brand 2205 according to Avesta Sheffield is used for welded constructions (pipelines, tanks) in the petrol industry, chemical industry and food industry. It is important to know the range of high-temperature brittleness in designing welding technology for constructions made of this steel type. There is no data in literature concerning this issue. High-temperature brittleness tests using the simulator of heat flow device Gleeble 3800 were performed. The tests results allowed the evaluation of the characteristic temperatures in the brittleness temperature range during the joining of duplex steels, specifically the nil-strength temperature (NST) and nil-ductility temperatures (NDT) during heating, the strength and ductility recovery temperatures (DRT) during cooling, the Rfparameter (Rf = (Tliquidus - NDT)/NDT) describing the duplex steel inclination for hot cracking, and the brittleness temperature range (BTR). It has been stated that, for the examined steel, this range is wide and amounts to ca. 90 °C. The joining of duplex steels with the help of welding techniques creates a significant risk of hot cracks. After analysis of the DTA curves a liquidus temperature of TL = 1465 °C and a solidus temperature of TS = 1454 °C were observed. For NST a mean value was assumed, in which the cracks appeared for six samples; the temperature was 1381 °C. As the value of the NDT temperature 1367 °C was applied while for DRT the assumed temperature was 1375 °C. The microstructure of the fractures was observed using a Hitachi S-3400N scanning electron microscope (SEM). The analyses of the chemical composition were performed using an energy-dispersive X-ray spectrometer (EDS), Noran System Six of Thermo Fisher Scientific. Essential differences of fracture morphology type over the brittle temperature range were observed and described.

Temperature measurement in intensive care patients: comparison of urinary bladder, oesophageal, rectal, axillary, and inguinal methods versus pulmonary artery core method.

PubMed

Lefrant, J-Y; Muller, L; de La Coussaye, J Emmanuel; Benbabaali, M; Lebris, C; Zeitoun, N; Mari, C; Saïssi, G; Ripart, J; Eledjam, J-J

2003-03-01

Comparisons of urinary bladder, oesophageal, rectal, axillary, and inguinal temperatures versus pulmonary artery temperature. Prospective cohort study. Intensive Care Unit of a University-Hospital. Forty-two intensive care patients requiring a pulmonary artery catheter (PAC). Patients requiring PAC and without oesophageal, urinary bladder, and/or rectal disease or recent surgery were included in the study. Temperature was simultaneously monitored with PAC, urinary, oesophageal, and rectal electronic thermometers and with axillary and inguinal gallium-in-glass thermometers. Comparisons used a Bland and Altman method. The pulmonary arterial temperature ranged from 33.7 degrees C to 40.2 degrees C. Urinary bladder temperature was assessed in the last 22 patients. A total of 529 temperature measurement comparisons were carried out (252 comparisons of esophageal, rectal, inguinal, axillary, and pulmonary artery temperature measurements in the first 20 patients, and 277 comparisons with overall methods in the last patients). Nine to 18 temperature measurement comparisons were carried out per patient (median = 13). The mean differences between pulmonary artery temperatures and those of the different methods studied were: oesophageal (0.11+/-0.30 degrees C), rectal (-0.07+/-0.40 degrees C), axillary (0.27+/-0.45 degrees C), inguinal (0.17+/-0.48 degrees C), urinary bladder (-0.21+/-0.20 degrees C). In critically ill patients, urinary bladder and oesophageal electronic thermometers are more reliable than the electronic rectal thermometer which is better than inguinal and axillary gallium-in-glass thermometers to measure core temperature.

EPR-based distance measurements at ambient temperature.

PubMed

Krumkacheva, Olesya; Bagryanskaya, Elena

2017-07-01

Pulsed dipolar (PD) EPR spectroscopy is a powerful technique allowing for distance measurements between spin labels in the range of 2.5-10.0nm. It was proposed more than 30years ago, and nowadays is widely used in biophysics and materials science. Until recently, PD EPR experiments were limited to cryogenic temperatures (T<80K). Recently, application of spin labels with long electron spin dephasing time at room temperature such as triarylmethyl radicals and nitroxides with bulky substituents at a position close to radical centers enabled measurements at room temperature and even at physiologically relevant temperatures by PD EPR as well as other approaches based on EPR (e.g., relaxation enhancement; RE). In this paper, we review the features of PD EPR and RE at ambient temperatures, in particular, requirements on electron spin phase memory time, ways of immobilization of biomolecules, the influence of a linker between the spin probe and biomolecule, and future opportunities. Copyright © 2017 Elsevier Inc. All rights reserved.

Direct observation of low energy nuclear spin excitations in HoCrO3 by high resolution neutron spectroscopy.

PubMed

Chatterji, T; Jalarvo, N; Kumar, C M N; Xiao, Y; Brückel, Th

2013-07-17

We have investigated low energy nuclear spin excitations in the strongly correlated electron compound HoCrO3. We observe clear inelastic peaks at E = 22.18 ± 0.04 μeV in both energy loss and gain sides. The energy of the inelastic peaks remains constant in the temperature range 1.5-40 K at which they are observed. The intensity of the inelastic peak increases at first with increasing temperature and then decreases at higher temperatures. The temperature dependence of the energy and intensity of the inelastic peaks is very unusual compared to that observed in other Nd, Co, V and also simple Ho compounds. Huge quasielastic scattering appears at higher temperatures presumably due to the fluctuating electronic moments of the Ho ions that get increasingly disordered at higher temperatures. The strong quasielastic scattering may also originate in the first Ho crystal-field excitations at about 1.5 meV.

ITER ECE Diagnostic: Design Progress of IN-DA and the diagnostic role for Physics

NASA Astrophysics Data System (ADS)

Pandya, H. K. B.; Kumar, Ravinder; Danani, S.; Shrishail, P.; Thomas, Sajal; Kumar, Vinay; Taylor, G.; Khodak, A.; Rowan, W. L.; Houshmandyar, S.; Udintsev, V. S.; Casal, N.; Walsh, M. J.

2017-04-01

The ECE Diagnostic system in ITER will be used for measuring the electron temperature profile evolution, electron temperature fluctuations, the runaway electron spectrum, and the radiated power in the electron cyclotron frequency range (70-1000 GHz), These measurements will be used for advanced real time plasma control (e.g. steering the electron cyclotron heating beams), and physics studies. The scope of the Indian Domestic Agency (IN-DA) is to design and develop the polarizer splitter units; the broadband (70 to 1000 GHz) transmission lines; a high temperature calibration source in the Diagnostics Hall; two Michelson Interferometers (70 to 1000 GHz) and a 122-230 GHz radiometer. The remainder of the ITER ECE diagnostic system is the responsibility of the US domestic agency and the ITER Organization (IO). The design needs to conform to the ITER Organization’s strict requirements for reliability, availability, maintainability and inspect-ability. Progress in the design and development of various subsystems and components considering various engineering challenges and solutions will be discussed in this paper. This paper will also highlight how various ECE measurements can enhance understanding of plasma physics in ITER.

Metamaterial superconductors

NASA Astrophysics Data System (ADS)

Smolyaninov, Igor I.; Smolyaninova, Vera N.

2018-05-01

Searching for natural materials exhibiting larger electron-electron interactions constitutes a traditional approach to high-temperature superconductivity research. Very recently, we pointed out that the newly developed field of electromagnetic metamaterials deals with the somewhat related task of dielectric response engineering on a sub-100-nm scale. Considerable enhancement of the electron-electron interaction may be expected in such metamaterial scenarios as in epsilon near-zero (ENZ) and hyperbolic metamaterials. In both cases, dielectric function may become small and negative in substantial portions of the relevant four-momentum space, leading to enhancement of the electron pairing interaction. This approach has been verified in experiments with aluminum-based metamaterials. Metamaterial superconductor with Tc=3.9 K have been fabricated, which is three times that of pure aluminum (Tc=1.2 K), which opens up new possibilities to improve the Tc of other simple superconductors considerably. Taking advantage of the demonstrated success of this approach, the critical temperature of hypothetical niobium, MgB2- and H2S-based metamaterial superconductors is evaluated. The MgB2-based metamaterial superconductors are projected to reach the liquid nitrogen temperature range. In the case of an H2S-based metamaterial, the projected Tc appears to reach 250 K.

Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.

PubMed

Li, Changjian; Liu, Zhiqi; Lü, Weiming; Wang, Xiao Renshaw; Annadi, Anil; Huang, Zhen; Zeng, Shengwei; Ariando; Venkatesan, T

2015-08-26

The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4 unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515 °C which corresponds to a critical relative crystallinity of ~70 ± 10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.

Decomposition of L a2 -xS rxCu O4 into several L a2O3 phases at elevated temperatures in ultrahigh vacuum inside a transmission electron microscope

NASA Astrophysics Data System (ADS)

Jeong, Jong Seok; Wu, Wangzhou; Topsakal, Mehmet; Yu, Guichuan; Sasagawa, Takao; Greven, Martin; Mkhoyan, K. Andre

2018-05-01

We report the decomposition of L a2 -xS rxCu O4 into L a2O3 and Cu nanoparticles in ultrahigh vacuum, observed by in situ heating experiments in a transmission electron microscope. The analysis of electron diffraction data reveals that the phase decomposition process starts at about 150 °C and is considerably expedited in the temperature range of 350 °C-450 °C. Two major resultant solid phases are identified as metallic Cu and L a2O3 by electron diffraction, simulation, and electron energy-loss spectroscopy (EELS) analyses. With the aid of calculations, L a2O3 phases are further identified to be derivatives of a fluorite structure—fluorite, pyrochlore, and (distorted) bixbyite—characterized by different oxygen-vacancy order. Additionally, the bulk plasmon energy and the fine structures of the O K and La M4 ,5 EELS edges are reported for these structures, along with simulated O K x-ray absorption near-edge structure. The resultant Cu nanoparticles and L a2O3 phases remain unchanged after cooling to room temperature.

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.; Swartz, C. K.; Hart, R. E., Jr.; Fan, J. C. C.

1982-01-01

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Solar array synthesis computer program

NASA Technical Reports Server (NTRS)

Faith, T. J.

1973-01-01

Photovoltaic characteristics have been measured on solar cells irradiated by 1 MeV electrons to fluences ranging from 1 x 10 to the 13th power e/sq cm to 1 x 10 to the 16th power e/sq cm, for cell temperatures ranging from 123 K to 473 K and for illumination intensities ranging from 5m W/sq cm to 1830m W/sq cm. Empirical equations have been derived from these measurements to describe the behavior of light generated current, open circuit voltage and I-V curve shape over various portions of these temperature/illumination ranges. Both 10 ohms/cm and 17 ohms/cm n-p silicon solar cells were tested, and similar analytical expressions were formulated for easy comparison between the two resistivities.

Electron paramagnetic resonance in Cu-doped ZnO

NASA Astrophysics Data System (ADS)

Buchheit, R.; Acosta-Humánez, F.; Almanza, O.

2016-04-01

In this work, ZnO and Cu-doped ZnO nanoparticles (Zn1-xCuxO, x = 3%), with a calcination temperature of 500∘C were synthesized using the sol-gel method. The particles were analyzed using atomic absorption spectroscopy (AAS), X-ray diffraction (XRD) and electron paramagnetic resonance (EPR) at X-band, measurement in a temperature range from 90 K to room temperature. AAS confirmed a good correspondence between the experimental doping concentration and the theoretical value. XRD reveals the presence of ZnO phase in hexagonal wurtzite structure and a nanoparticle size for the samples synthesized. EPR spectroscopy shows the presence of point defects in both samples with g-values of g = 1.959 for shallow donors and g = 2.004 for ionized vacancies. It is important when these materials are required have been used as catalysts, as suggested that it is not necessary prepare them at higher temperature. A simulation of the Cu EPR signal using an anisotropic spin Hamiltonian was performed and showed good coincidence with the experimental spectra. It was shown that Cu2+ ions enter interstitial octahedral sites of orthorhombic symmetry in the wurtzite crystal structure. Temperature dependence of the EPR linewidth and signal intensity shows a paramagnetic behavior of the sample in the measurement range. A Néel temperature TN = 78 ± 19 K was determined.

Johnson Noise Thermometry in the range 505 K to 933 K

NASA Astrophysics Data System (ADS)

Tew, Weston; Labenski, John; Nam, Sae Woo; Benz, Samuel; Dresselhaus, Paul; Martinis, John

2006-03-01

The International Temperature Scale of 1990 (ITS-90) is an artifact-based temperature scale, T90, designed to approximate thermodynamic temperature T. The thermodynamic errors of the ITS-90, characterized as the value of T-T90, only recently have been quantified by primary thermodynamic methods. Johnson Noise Thermometry (JNT) is a primary method which can be applied over wide temperature ranges, and NIST is currently using JNT to determine T-T90 in the range 505 K to 933 K, overlapping both acoustic gas-based and radiation-based thermometry. Advances in digital electronics have now made the computationally intensive processing required for JNT viable using noise voltage correlation in the frequency domain. We have also optimized the design of the 5-wire JNT temperature probes to minimize electromagnetic interference and transmission line effects. Statistical uncertainties under 50 μK/K are achievable using relatively modest bandwidths of ˜100 kHz. The NIST JNT system will provide critical data for T-T90 linking together the highly accurate acoustic gas-based data at lower temperatures with the higher-temperature radiation-based data, forming the basis for a new International Temperature Scale with greatly improved thermodynamic accuracy.

Equation of state and electron localisation in fcc lithium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frost, Mungo; Levitan, Abraham L.; Sun, Peihao

We present an improved equation of state for the high-pressure fcc phase of lithium with ambient temperature experimental data, extending the pressure range of previous studies to 36 GPa. Accompanying density functional theory calculations, which reproduce the experimental equation of state, show that with increasing density the phase diverges from a nearly free electron metal. At the high pressure limit of its stability fcc lithium exhibits enhanced electron density on the octahedral interstices with a high degree of localisation.

Equation of state and electron localisation in fcc lithium

DOE PAGES

Frost, Mungo; Levitan, Abraham L.; Sun, Peihao; ...

2018-02-14

We present an improved equation of state for the high-pressure fcc phase of lithium with ambient temperature experimental data, extending the pressure range of previous studies to 36 GPa. Accompanying density functional theory calculations, which reproduce the experimental equation of state, show that with increasing density the phase diverges from a nearly free electron metal. At the high pressure limit of its stability fcc lithium exhibits enhanced electron density on the octahedral interstices with a high degree of localisation.

Charging and heat collection by a positively charged dust grain in a plasma.

PubMed

Delzanno, Gian Luca; Tang, Xian-Zhu

2014-07-18

Dust particulates immersed in a quasineutral plasma can emit electrons in several important applications. Once electron emission becomes strong enough, the dust enters the positively charged regime where the conventional orbital-motion-limited (OML) theory can break down due to potential-well effects on trapped electrons. A minimal modification of the trapped-passing boundary approximation in the so-called OML(+) approach is shown to accurately predict the dust charge and heat collection flux for a wide range of dust size and temperature.

Growth behavior of carbon nanotubes on multilayered metal catalyst film in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretkzy, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-06-01

The temperature and time dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600-1100 °C temperature range of these studies, narrower temperature ranges were determined for the growth of distinct types of aligned multi-walled CNTs and single-walled CNTs by using high-resolution transmission electron microscopy and Raman spectroscopy. At 900 °C, in contrast to earlier work, double-walled CNTs are found more abundant than single-walled CNTs. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long durations.

Theory of interparticle correlations in dense, high-temperature plasmas. V - Electric and thermal conductivities

NASA Technical Reports Server (NTRS)

Ichimaru, S.; Tanaka, S.

1985-01-01

Ichimaru et al. (1985) have developed a general theory in which the interparticle correlations in dense, high-temperature multicomponent plasmas were formulated systematically over a wide range of plasma parameters. The present paper is concerned with an extension of this theory, taking into account the problems of the electronic transport in such high-density plasmas. It is shown that the resulting theory is capable of describing the transport coefficients accurately over a wide range of the density and temperature parameters. Attention is given to electric and thermal conductivities, generalized Coulomb logarithms, a comparison of the considered theory with other theories, and a comparison of the theory with experimental results.

Electronic correlation effects and the Coulomb gap at finite temperature.

PubMed

Sandow, B; Gloos, K; Rentzsch, R; Ionov, A N; Schirmacher, W

2001-02-26

We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type germanium, using tunneling spectroscopy on mechanically controllable break junctions. At low temperatures, the tunnel conductance shows a minimum at zero bias voltage due to the Coulomb gap. Above 1 K, the gap is filled by thermal excitations. This behavior is reflected in the variable-range hopping resistivity measured on the same samples: up to a few degrees Kelvin the Efros-Shklovskii lnR infinity T(-1/2) law is obeyed, whereas at higher temperatures deviations from this law occur. The type of crossover differs from that considered previously in the literature.

Temperature effect on radiation induced reactions in ethylene and tetrafluoroethylene copolymer (ETFE)

NASA Astrophysics Data System (ADS)

Oshima, Akihiro; Ikeda, Shigetoshi; Seguchi, Tadao; Tabata, Yoneho

1997-11-01

Ethylene and tetrafluoroethylene copolymer (ETFE) was irradiated by γ-rays or electron beam (EB) under oxygen-free atmosphere at various temperatures ranging from 77 to 573 K. Mechanical and thermal properties, and absorption spectra of the irradiated ETFEs were measured. The mechanical properties of the film have been observed to change by irradiation. The modulus and yield strength increase with increasing dose, and these phenomena are clearly distinguished above the melting temperature of ETFE (533 K). Heat of crystallization changes drastically as a function of irradiation dose around the melting temperature, compared with other temperatures. The absorption band around 250 nm of irradiated ETFE shifts to a longer wavelength region with increase of irradiation temperature. Therefore, it was concluded from those experimental results mentioned above that crosslinking takes place and conjugated double bonds formation proceeds in a wide range of irradiation temperatures. Those reactions are enhanced by increasing temperature. The homogeneous crosslinking takes place in the molten state, while the heterogeneous crosslinking does in the crystalline solid state.

Thermo-Electron Ballistic Coolers or Heaters

NASA Technical Reports Server (NTRS)

Choi, Sang H.

2003-01-01

Electronic heat-transfer devices of a proposed type would exploit some of the quantum-wire-like, pseudo-superconducting properties of single-wall carbon nanotubes or, optionally, room-temperature-superconducting polymers (RTSPs). The devices are denoted thermo-electron ballistic (TEB) coolers or heaters because one of the properties that they exploit is the totally or nearly ballistic (dissipation or scattering free) transport of electrons. This property is observed in RTSPs and carbon nanotubes that are free of material and geometric defects, except under conditions in which oscillatory electron motions become coupled with vibrations of the nanotubes. Another relevant property is the high number density of electrons passing through carbon nanotubes -- sufficient to sustain electron current densities as large as 100 MA/square cm. The combination of ballistic motion and large current density should make it possible for TEB devices to operate at low applied potentials while pumping heat at rates several orders of magnitude greater than those of thermoelectric devices. It may also enable them to operate with efficiency close to the Carnot limit. In addition, the proposed TEB devices are expected to operate over a wider temperature range

An electron tunneling study of superconductivity in amorphous Sn(sub 1-x)Cu(sub x) thin films

NASA Technical Reports Server (NTRS)

Naugle, D. G.; Watson, P. W., III; Rathnayaka, K. D. D.

1995-01-01

The amorphous phase of Sn would have a superconducting transition temperature near 8 K, much higher than that of crystalline Sn with T(sub c) = 3.5 K. To obtain the amorphous phase, however, it is necessary to use a Sn alloy, usually Cu, and quench condense the alloy films onto a liquid He temperature substrate. Alloying with Cu reduces the superconducting transition temperature almost linearly with Cu concentration with an extrapolation of T(sub c) to zero for x = 0.85. Analysis of the tunneling characteristics between a normal metal electrode with an insulating barrier and superconducting amorphous Sn-Cu films provides detailed information on the changes in the electron-phonon coupling which determines T(sub c) in these alloys. The change from very strong electron-phonon coupling to weak-coupling with the increase in Cu content of amorphous Sn-Cu alloys for the range 0.08 is less than or equal to x is less than or equal to 0.41 is presented and discussed in terms of theories of electron-phonon coupling in disordered metals.

Observation of microwave absorption and emission from incoherent electron tunneling through a normal-metal-insulator-superconductor junction.

PubMed

Masuda, Shumpei; Tan, Kuan Y; Partanen, Matti; Lake, Russell E; Govenius, Joonas; Silveri, Matti; Grabert, Hermann; Möttönen, Mikko

2018-03-02

We experimentally study nanoscale normal-metal-insulator-superconductor junctions coupled to a superconducting microwave resonator. We observe that bias-voltage-controllable single-electron tunneling through the junctions gives rise to a direct conversion between the electrostatic energy and that of microwave photons. The measured power spectral density of the microwave radiation emitted by the resonator exceeds at high bias voltages that of an equivalent single-mode radiation source at 2.5 K although the phonon and electron reservoirs are at subkelvin temperatures. Measurements of the generated power quantitatively agree with a theoretical model in a wide range of bias voltages. Thus, we have developed a microwave source which is compatible with low-temperature electronics and offers convenient in-situ electrical control of the incoherent photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components or suffering from unwanted losses in room temperature cables. Importantly, our observation of negative generated power at relatively low bias voltages provides a novel type of verification of the working principles of the recently discovered quantum-circuit refrigerator.

Manipulation of electronic phases in Au-nanodots-decorated manganite films by laser illumination

NASA Astrophysics Data System (ADS)

Li, Hui; Zhang, Kaixuan; Wang, Dongli; Xu, Han; Zhou, Haibiao; Fan, Xiaodong; Cheng, Guanghui; Cheng, Long; Lu, Qingyou; Li, Lin; Zeng, Changgan

2018-06-01

Precise manipulation of the electronic phases in strongly correlated oxides offers an avenue to control the macroscopic functionalities, thereby sparking enormous research interests in condensed matter physics. In the present paper, phase-separated La0.33Pr0.34Ca0.33MnO3 (LPCMO) thin films with a fraction of the ferromagnetic metallic phase close to the percolation threshold are successfully prepared, in which the nonvolatile and erasable switching between different electronic states is realized through cooperative effects of Au-nanodots capping and laser illumination. The deposition of Au nanodots on LPCMO thin films leads to the occurrence of a thermally inaccessible nonpercolating state at low temperatures, manifested as the absence of insulator-metal transition as temperature decreases. Such a nonpercolating state can be substantially tuned back to a percolating state by laser illumination in a nonvolatile and erasable way, accompanied by gigantic resistance drops in a wide temperature range. The formation of local oxygen vacancies near Au nanodots and thereby the modulation of mesoscopic electronic texture should be the key factor for the realization of flexible modulation of global transport properties in LPCMO thin films. Our findings pave a way toward the manipulation of physical properties of the electronically phase-separated systems and the design of optically controlled electronic devices.

Delocalized and localized states of eg electrons in half-doped manganites.

PubMed

Winkler, E L; Tovar, M; Causa, M T

2013-07-24

We have studied the magnetic behaviour of half-doped manganite Y0.5Ca0.5MnO3 in an extended range of temperatures by means of magnetic susceptibility, χ(T), and electron spin resonance (ESR) experiments. At high temperature the system crystallizes in an orthorhombic structure. The resistivity value, ρ ≃ 0.05 Ω cm at 500 K, indicates a metallic behaviour, while the Curie-Weiss dependence of χ(T) and the thermal evolution of the ESR parameters are very well described by a model that considers a system conformed by localized Mn(4+) cores, [Formula: see text], and itinerant, eg, electrons. The strong coupling between t2g and eg electrons results in an enhanced Curie constant and an FM Curie-Weiss temperature that overcomes the AFM interactions between the [Formula: see text] cores. A transition to a more distorted phase is observed at T ≈ 500 K and signatures of localization of the eg electrons appear in the χ(T) behaviour below 300 K. A new Curie-Weiss regime is observed, where the Curie-constant value is consistent with dimer formation. Based on mean-field calculations, the dimer formation is predicted as a function of the interaction strength between the t2g and eg electrons.

New oligomers containing pendant 4-aryl-7-phenylfluorene units as efficient charge transporting materials for OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Baranauskyte, U.; Tavgeniene, D.; Andruleviciute, V.; Sutkuviene, S.; Yao, B.; Xie, Z.; Zhang, B.; Grigalevicius, S.

2017-10-01

Monomers and oligomers containing electronically isolated 4-aryl-7-phenylfluorene fragments have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The oligomers represent materials of very high thermal stability having initial thermal degradation temperatures in the range of 402-412 °C. The glass transition temperatures of the amorphous oligomers were in the rage of 97-129 °C. The electron photoemission spectra of thin layers of the oligomeric materials showed ionization potentials in the range of 5.7-6.1 eV. Hole injecting/transporting properties of the electroactive oligomers were tested in the structures of organic light emitting diodes with tris(quinolin-8-olato)aluminium as a green emitter. The device containing hole-transporting material with 4-biphenyl-7-phenylfluorene electrophores exhibited the best overall performance with low turn on voltage of 4.4 V, high current efficiency exceeding 3.6 cd/A and maximum brightness exceeding 3200 cd/m2.

Properties of Cathodoluminescence for Cryogenic Applications of SiO2-based Space Observatory Optics and Coatings

NASA Technical Reports Server (NTRS)

Evans, Amberly; Dennison, J.R.; Wilson, Gregory; Dekany, Justin; Bowers Charles W.; Meloy, Robert; Heaney, James B.

2013-01-01

Disordered thin film SiO2SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high-energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (60-200 nm) SiO2SiOx optical coatings on reflective metal substrates over a range of sample temperatures (40-400 K) and emission wavelengths (260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UVVISNIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

Two-dimensional tantalum disulfide: controlling structure and properties via synthesis

NASA Astrophysics Data System (ADS)

Zhao, Rui; Grisafe, Benjamin; Krishna Ghosh, Ram; Holoviak, Stephen; Wang, Baoming; Wang, Ke; Briggs, Natalie; Haque, Aman; Datta, Suman; Robinson, Joshua

2018-04-01

Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 µm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Enhanced electron/fuel-ion equilibration through impurity ions: Studies applicable to NIF and Omega

NASA Astrophysics Data System (ADS)

Petrasso, R. D.; Sio, H.; Kabadi, N.; Lahmann, B.; Simpson, R.; Parker, C.; Frenje, J.; Gatu Johnson, M.; Li, C. K.; Seguin, F. H.; Rinderknecht, H.; Casey, D.; Grabowski, P.; Graziani, F.; Taitano, W.; Le, A.; Chacon, L.; Hoffman, N.; Kagan, G.; Simakov, A.; Zylstra, A.; Rosenberg, M.; Betti, R.; Srinivasan, B.; Mancini, R.

2017-10-01

In shock-driven exploding-pushers, a platform used extensively to study multi-species and kinetic effects, electrons and fuel ions are far out of equilibrium, as reflected by very different temperatures. However, impurity ions, even in small quantities, can couple effectively to the electrons, because of a Z2 dependence, and in turn, impurity ions can then strongly couple to the fuel ions. Through this mechanism, electrons and fuel-ions can equilibrate much faster than they otherwise would. This is a quantitative issue, depending upon the amount and Z of the impurity. For NIF and Omega, we consider the role of this process. Coupled non-linear equations, reflecting the temperatures of the three species, are solved for a range of conditions. Consideration is also given to ablatively driven implosions, since impurities can similarly affect the equilibration. This work was supported in part by DOE/NNSA DE-NA0002949 and DE-NA0002726.

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Flush-mounted probe diagnostics for argon glow discharge plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liang, E-mail: xld02345@mail.ustc.edu.cn; Cao, Jinxiang; Liu, Yu

2014-09-15

A comparison is made between plasma parameters measured by a flush-mounted probe (FP) and a cylindrical probe (CP) in argon glow discharge plasma. Parameters compared include the space potential, the plasma density, and the effective electron temperature. It is found that the ion density determined by the FP agrees well with the electron density determined by the CP in the quasi-neutral plasma to better than 10%. Moreover, the space potential and effective electron temperature calculated from electron energy distribution function measured by the FP is consistent with that measured by the CP over the operated discharge current and pressure ranges.more » These results present the FP can be used as a reliable diagnostic tool in the stable laboratory plasma and also be anticipated to be applied in other complicated plasmas, such as tokamaks, the region of boundary-layer, and so on.« less

Radiation-induced amorphization of Langasite La3Ga5SiO14

NASA Astrophysics Data System (ADS)

Yao, Tiankai; Lu, Fengyuan; Zhang, Haifeng; Gong, Bowen; Ji, Wei; Zuo, Lei; Lian, Jie

2018-03-01

Single crystals of Langasite La3Ga5SiO14 (LGS) were irradiated by 1 MeV Kr2+ ions at temperature range from 298 to 898 K in order to simulate the damage effect of neutron radiation on Langasite, a candidate sensor material proposed as high temperature and pressure sensors in nuclear reactors. The microstructure evolution of LGS as functions of irradiation dose and temperature was followed by in-situ TEM observation through electron diffraction pattern. LGS is found to be sensitive to ion beam irradiation-induced amorphization from displacive heavy ions with a low critical dose of ∼0.5 ± 0.2 dpa (neutron fluence of (1.6 ± 0.6) × 1019 neutrons/cm2) at room temperature. The critical amorphization temperature, Tc, is determined to be 910 ± 10 K. Under simultaneous ionizing electron (300 keV, 45 nA) and displacive heavy ion irradiations (1-MeV Kr2+ and flux of 6.25 × 1011 ions/cm2·s), LGS displayed greater stability of crystal structure against amorphization, possibly due to the electron radiation-induced recovery of displacive damage by heavy ions.

Microstructure, crystallography and nucleation mechanism of NANOBAIN steel

NASA Astrophysics Data System (ADS)

Huang, Yao; Zhao, Ai-min; He, Jian-guo; Wang, Xiao-pei; Wang, Zhi-gang; Qi, Liang

2013-12-01

The microstructure of bainite ferrite in NANOBAIN steel transformed at different temperatures was investigated by scanning electron microscopy, transmission electron microscopy, electron back-scattered diffraction, and vickers hardness tester in detail. It is found that the average width of bainitic ferrite (BF) plates can be refined to be thinner with the reduction of temperature (473-573 K), and the bainitic ferrite plates can reach up to 20-74 nm at 473 K. Crystallographic analysis reveals that the bainitic ferrite laths are close to the Nishiyama-Wasserman orientation relationship with their parent austenite. Temperature shows a significant effect on the variant selection, and a decrease in temperature generally weakens the variant selection. Thermodynamic analyses indicates that the Lacher, Fowler and Guggenheim (LFG) model is more suitable than the Kaufman, Radcliffe and Cohen (KRC) model dealing with NANOBAIN steel at a low temperature range. The free energy change Δ G γ→BF is about -1500 J·mol-1 at 473 K, which indicates that nucleation in NANOBAIN steel is the shear mechanism. Finally, the formation of carbon poor regions is thermodynamically possible, and the existence of carbon poor regions can greatly increase the possibility of the shear mechanism.

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Effect of ion temperature on ion-acoustic solitary waves in a magnetized plasma in presence of superthermal electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, S. V.; Devanandhan, S.; Lakhina, G. S.

2013-01-15

Obliquely propagating ion-acoustic soliatry waves are examined in a magnetized plasma composed of kappa distributed electrons and fluid ions with finite temperature. The Sagdeev potential approach is used to study the properties of finite amplitude solitary waves. Using a quasi-neutrality condition, it is possible to reduce the set of equations to a single equation (energy integral equation), which describes the evolution of ion-acoustic solitary waves in magnetized plasmas. The temperature of warm ions affects the speed, amplitude, width, and pulse duration of solitons. Both the critical and the upper Mach numbers are increased by an increase in the ion temperature.more » The ion-acoustic soliton amplitude increases with the increase in superthermality of electrons. For auroral plasma parameters, the model predicts the soliton speed, amplitude, width, and pulse duration, respectively, to be in the range of (28.7-31.8) km/s, (0.18-20.1) mV/m; (590-167) m, and (20.5-5.25) ms, which are in good agreement with Viking observations.« less

Experimental and theoretical investigation of the temperature dependent electronic quenching of O(1D) atoms in collisions with Kr

NASA Astrophysics Data System (ADS)

Nuñez-Reyes, Dianailys; Kłos, Jacek; Alexander, Millard H.; Dagdigian, Paul J.; Hickson, Kevin M.

2018-03-01

The kinetics and dynamics of the collisional electronic quenching of O(1D) atoms by Kr have been investigated in a joint experimental and theoretical study. The kinetics of quenching were measured over the temperature range 50-296 K using the Laval nozzle method. O(1D) atoms were prepared by 266 nm photolysis of ozone, and the decay of the O(1D) concentration was monitored through vacuum ultraviolet fluorescence at 115.215 nm, from which the rate constant was determined. To interpret the experiments, a quantum close-coupling treatment of the quenching transition from the 1D state to the 3Pj fine-structure levels in collisions with Kr, and also Ar and Xe, was carried out. The relevant potential energy curves and spin-orbit coupling matrix elements were obtained in electronic structure calculations. We find reasonable agreement between computed temperature-dependent O(1D)-Rg (Rg = Ar, Kr, Xe) quenching rate constants and the present measurements for Kr and earlier measurements. In particular, the temperature dependence is well described.

Rapid Tempering of Martensitic Stainless Steel AISI420: Microstructure, Mechanical and Corrosion Properties

NASA Astrophysics Data System (ADS)

Abbasi-Khazaei, Bijan; Mollaahmadi, Akbar

2017-04-01

In this research, the effect of rapid tempering on the microstructure, mechanical properties and corrosion resistance of AISI 420 martensitic stainless steel has been investigated. At first, all test specimens were austenitized at 1050 °C for 1 h and tempered at 200 °C for 1 h. Then, the samples were rapidly reheated by a salt bath furnace in a temperature range from 300 to 1050 °C for 2 min and cooled in air. The tensile tests, impact, hardness and electrochemical corrosion were carried out on the reheated samples. Scanning electron microscopy was used to study the microstructure and fracture surface. To investigate carbides, transmission electron microscopy and also scanning electron microscopy were used. X-ray diffraction was used for determination of the retained austenite. The results showed that the minimum properties such as the tensile strength, impact energy, hardness and corrosion resistance were obtained at reheating temperature of 700 °C. Semi-continuous carbides in the grain boundaries were seen in this temperature. Secondary hardening phenomenon was occurred at reheating temperature of 500 °C.

Acoustoelectric effect in graphene with degenerate energy dispersion

NASA Astrophysics Data System (ADS)

Dompreh, K. A.; Mensah, N. G.; Mensah, S. Y.

2017-01-01

Acoustoelectric current (jac) in Free-Standing Graphene (FSG) having degenerate energy dispersion at low temperatures T ≪TBG (TBG is the Block-Gruneisen temperature) was studied theoretically. We considered electron interaction with in-plain acoustic phonons in the hypersound regime (sound vibration in the range 109 -1012 Hz). The obtained expression for jac was numerically analyzed for various temperatures (T) and frequencies (ωq) and graphically presented. The non-linear dependence of jac on ωq varied with temperature. This qualitatively agreed with an experimentally obtained result which deals with temperature dependent acoustoelectric current in graphene [21].

Room temperature single-photon detectors for high bit rate quantum key distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comandar, L. C.; Patel, K. A.; Engineering Department, Cambridge University, 9 J J Thomson Ave., Cambridge CB3 0FA

We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances.

Atomic structure data based on average-atom model for opacity calculations in astrophysical plasmas

NASA Astrophysics Data System (ADS)

Trzhaskovskaya, M. B.; Nikulin, V. K.

2018-03-01

Influence of the plasmas parameters on the electron structure of ions in astrophysical plasmas is studied on the basis of the average-atom model in the local thermodynamic equilibrium approximation. The relativistic Dirac-Slater method is used for the electron density estimation. The emphasis is on the investigation of an impact of the plasmas temperature and density on the ionization stages required for calculations of the plasmas opacities. The level population distributions and level energy spectra are calculated and analyzed for all ions with 6 ≤ Z ≤ 32 occurring in astrophysical plasmas. The plasma temperature range 2 - 200 eV and the density range 2 - 100 mg/cm3 are considered. The validity of the method used is supported by good agreement between our values of ionization stages for a number of ions, from oxygen up to uranium, and results obtained earlier by various methods among which are more complicated procedures.

Design and first plasma measurements of the ITER-ECE prototype radiometer

DOE PAGES

Austin, M. E.; Brookman, M. W.; Rowan, W. L.; ...

2016-08-09

On ITER, second harmonic optically thick electron cyclotron emission (ECE) in the range of 220-340 GHz will supply the electron temperature (T e). In order to investigate the requirements and capabilities prescribed for the ITER system, a prototype radiometer covering this frequency range has been developed by Virginia Diodes, Inc. The first plasma measurements with this instrument have been carried out on the DIII-D tokamak, with lab bench tests and measurements of third through fifth harmonic ECE from high T e plasmas. At DIII-D the instrument shares the transmission line of the Michelson interferometer and can simultaneously acquire data. Inmore » our comparison of the ECE radiation temperature from the absolutely calibrated Michelson and the prototype receiver we show that the ITER radiometer provides accurate measurements of the millimeter radiation across the instrument band.« less

Evaluation of a Programmable Voltage-Controlled MEMS Oscillator, Type SiT3701, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Semiconductor chips based on MEMS (Micro-Electro-Mechanical Systems) technology, such as sensors, transducers, and actuators, are becoming widely used in today s electronics due to their high performance, low power consumption, tolerance to shock and vibration, and immunity to electro-static discharge. In addition, the MEMS fabrication process allows for the miniaturization of individual chips as well as the integration of various electronic circuits into one module, such as system-on-a-chip. These measures would simplify overall system design, reduce parts count and interface, improve reliability, and reduce cost; and they would meet requirements of systems destined for use in space exploration missions. In this work, the performance of a recently-developed MEMS voltage-controlled oscillator was evaluated under a wide temperature range. Operation of this new commercial-off-the-shelf (COTS) device was also assessed under thermal cycling to address some operational conditions of the space environment

EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

NASA Astrophysics Data System (ADS)

Karray, Fekri; Kassiba, Abdelhadi

2012-06-01

Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

Electroactive polymers containing 3-arylcarbazolyl units as hole transporting materials for OLEDs

NASA Astrophysics Data System (ADS)

Krucaite, G.; Liu, L.; Tavgeniene, D.; Peciulyte, L.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Grigalevicius, S.

2015-04-01

Monomers and their polymers containing 3-arylcarbazolyl electrophores have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The polymers represent materials of high thermal stability having initial thermal degradation temperatures in the range of 331-411 °C. The glass transition temperatures of the amorphous polymeric materials were in the rage of 148-175 °C. The electron photoemission spectra of thin layers of monomers showed ionization potentials in the range of 5.6-5.65 eV. Hole-transporting properties of the polymers were tested in the structures of organic light emitting diodes with Alq3 as the green emitter. The device containing hole-transporting layers of polyether with 3-naphthylcarbazolyl groups exhibited the best overall performance with a maximum current efficiency of 3.3 cd/A and maximum brightness of about 1000 cd/m2.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Electrostatic fluctuations in collisional plasmas

NASA Astrophysics Data System (ADS)

Rozmus, W.; Brantov, A.; Fortmann-Grote, C.; Bychenkov, V. Yu.; Glenzer, S.

2017-10-01

We present a theory of electrostatic fluctuations in two-component plasmas where electrons and ions are described by Maxwellian distribution functions at unequal temperatures. Based on the exact solution of the Landau kinetic equation, that includes electron-electron, electron-ion, and ion-ion collision integrals, the dynamic form factor, S (k ⃗,ω ) , is derived for weakly coupled plasmas. The collective plasma responses at ion-acoustic, Langmuir, and entropy mode resonances are described for arbitrary wave numbers and frequencies in the entire range of plasma collisionality. The collisionless limit of S (k ⃗,ω ) and the strong-collision result based on the fluctuation-dissipation theorem and classical transport at Te=Ti are recovered and discussed. Results of several Thomson scattering experiments in the broad range of plasma parameters are described and discussed by means of our theory for S (k ⃗,ω ) .

Rocket measurements of conjugate photoelectrons during the total solar eclipse of 7 March 1970 over Wallops Island.

NASA Technical Reports Server (NTRS)

Maier, E. J.; Narasinga Rao, B. C.

1972-01-01

Results of measurements made with a retarding potential analyzer on a Nike-Tomahawk rocket during the totality of the solar eclipse, showing definite evidence for the existence of photoelectrons from the conjugate hemisphere. Photoelectrons are observed in the altitude range from 120 to 260 km. The observed flux in the energy range from 2 to 30 eV is relatively constant above about 200 km, but decreased below that altitude. The flux of 5-eV energy electrons above 200 km altitude is about 10 to the 7th power electrons/cm/sec/eV. Higher-energy electrons were also observed, and it is possible that the energy content of these observed fluxes of conjugate-point photoelectrons is sufficient to maintain the observed electron densities and temperatures during the total eclipse.

Highly Conducting Molecular Crystals.

NASA Astrophysics Data System (ADS)

Whitehead, Roger James

Available from UMI in association with The British Library. Requires signed TDF. As the result of a wide ranging effort towards the preparation of new electrically conducting molecular crystals, high quality samples were prepared of the organic radical-ion salt (TMTSF)_2SbCl _2F_4 {bis-tetramethyltetraselenafulvalene-dichlorotetrafluoroantimonate(V) }. A collaborative effort to investigate the electronic and structural properties of this material has yielded the necessary depth of information required to give a satisfactory understanding of its rather complicated behaviour. The combination of x-ray structural studies with d.c. transport, reflectance and magnetic measurements has served to underline the importance of crystalline perfection, electronic dimensionality and conduction electron correlation in determining the materials overall behaviour. This thesis describes the method of preparation and characterization of (TMTSF)_2SbCl _2F_4 and the experimental arrangements used to determine the temperature dependence of its ambient pressure electrical conductivity, thermopower and electron spin resonance spectra. The crystal structure and optical reflectance measurements at room temperature are also presented. The results into a study of the low temperature diffraction pattern are described along with the temperature dependence in the static magnetic susceptibility and in the conductivity behaviour under elevated hydrostatic pressures. These findings are rationalized by reference to other materials which show similar behaviour in their electronic and/or structural properties, and also to the various theoretical models currently enjoying favour.

Laser-Induced Skyrmion Writing and Erasing in an Ultrafast Cryo-Lorentz Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Berruto, G.; Madan, I.; Murooka, Y.; Vanacore, G. M.; Pomarico, E.; Rajeswari, J.; Lamb, R.; Huang, P.; Kruchkov, A. J.; Togawa, Y.; LaGrange, T.; McGrouther, D.; Rønnow, H. M.; Carbone, F.

2018-03-01

We demonstrate that light-induced heat pulses of different duration and energy can write Skyrmions in a broad range of temperatures and magnetic field in FeGe. Using a combination of camera-rate and pump-probe cryo-Lorentz transmission electron microscopy, we directly resolve the spatiotemporal evolution of the magnetization ensuing optical excitation. The Skyrmion lattice was found to maintain its structural properties during the laser-induced demagnetization, and its recovery to the initial state happened in the sub-μ s to μ s range, depending on the cooling rate of the system.

On the validity of the Arrhenius equation for electron attachment rate coefficients.

PubMed

Fabrikant, Ilya I; Hotop, Hartmut

2008-03-28

The validity of the Arrhenius equation for dissociative electron attachment rate coefficients is investigated. A general analysis allows us to obtain estimates of the upper temperature bound for the range of validity of the Arrhenius equation in the endothermic case and both lower and upper bounds in the exothermic case with a reaction barrier. The results of the general discussion are illustrated by numerical examples whereby the rate coefficient, as a function of temperature for dissociative electron attachment, is calculated using the resonance R-matrix theory. In the endothermic case, the activation energy in the Arrhenius equation is close to the threshold energy, whereas in the case of exothermic reactions with an intermediate barrier, the activation energy is found to be substantially lower than the barrier height.

Superconductivity in solid benzene molecular crystal.

PubMed

Zhong, Guo-Hua; Yang, Chun-Lei; Chen, Xiao-Jia; Lin, Hai-Qing

2018-06-20

Light-element compounds hold great promise of high critical temperature superconductivity judging from the theoretical perspective. A hydrogen-rich material, benzene, is such a kind of candidate but also an organic compound. A series of first-principles calculations are performed on the electronic structures, dynamics properties, and electron-phonon interactions of solid benzene at high pressures. Benzene is found to be dynamically stable in the pressure range of 180-200 GPa and to exhibit superconductivity with a maximum transition temperature of 20 K at 195 GPa. The phonon modes of carbon atoms are identified to mainly contribute to the electron-phonon interactions driving this superconductivity. The predicted superconductivity in this simplest pristine hydrocarbon shows a common feature in aromatic hydrocarbons and also makes it a bridge to organic and hydrogen-rich superconductors.

A frequency tunable, eight-channel correlation ECE system for electron temperature turbulence measurements on the DIII-D tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, C., E-mail: csung@physics.ucla.edu; Peebles, W. A.; Wannberg, C.

2016-11-15

A new eight-channel correlation electron cyclotron emission diagnostic has recently been installed on the DIII-D tokamak to study both turbulent and coherent electron temperature fluctuations under various plasma conditions and locations. This unique system is designed to cover a broad range of operation space on DIII-D (1.6-2.1 T, detection frequency: 72-108 GHz) via four remotely selected local oscillators (80, 88, 96, and 104 GHz). Eight radial locations are measured simultaneously in a single discharge covering as much as half the minor radius. In this paper, we present design details of the quasi-optical system, the receiver, as well as representative datamore » illustrating operation of the system.« less

Pioneer Venus Orbiter planar retarding potential analyzer plasma experiment

NASA Technical Reports Server (NTRS)

Knudsen, W. C.; Bakke, J.; Spenner, K.; Novak, V.

1980-01-01

The retarding potential analyzer (RPA) on the Pioneer Venus Orbiter Mission measures most of the thermal plasma parameters within and near the Venusian ionosphere. Parameters include total ion concentration, concentrations of the more abundant ions, ion temperatures, ion drift velocity, electron temperature, and low-energy (0-50 eV) electron distribution function. Several functions not previously used in RPA's were developed and incorporated into this instrument to accomplish these measurements on a spinning spacecraft with a small bit rate. The more significant functions include automatic electrometer ranging with background current compensation; digital, quadratic retarding potential step generation for the ion and low-energy electron scans; a current sampling interval of 2 ms throughout all scans; digital logic inflection point detection and data selection; and automatic ram direction detection.

Microsystems, Space Qualified Electronics and Mobile Sensor Platforms for Harsh Environment Applications and Planetary Exploration

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Okojie, Robert S.; Krasowski, Michael J.; Beheim, Glenn M.; Fralick, Gustave C.; Wrbanek, John D.; Greenberg, Paul S.; Xu, Jennifer

2007-01-01

NASA Glenn Research Center is presently developing and applying a range of sensor and electronic technologies that can enable future planetary missions. These include space qualified instruments and electronics, high temperature sensors for Venus missions, mobile sensor platforms, and Microsystems for detection of a range of chemical species and particulates. A discussion of each technology area and its level of maturity is given. It is concluded that there is a strong need for low power devices which can be mobile and provide substantial characterization of the planetary environment where and when needed. While a given mission will require tailoring of the technology for the application, basic tools which can enable new planetary missions are being developed.

Electron attachment to trinitrotoluene (TNT) embedded in He droplets: complete freezing of dissociation intermediates in an extended range of electron energies.

PubMed

Mauracher, Andreas; Schöbel, Harald; Ferreira da Silva, Filipe; Edtbauer, Achim; Mitterdorfer, Christian; Denifl, Stephan; Märk, Tilmann D; Illenberger, Eugen; Scheier, Paul

2009-10-01

Electron attachment to the explosive trinitrotoluene (TNT) embedded in Helium droplets (TNT@He) generates the non-decomposed complexes (TNT)(n)(-), but no fragment ions in the entire energy range 0-12 eV. This strongly contrasts the behavior of single TNT molecules in the gas phase at ambient temperatures, where electron capture leads to a variety of different fragmentation products via different dissociative electron attachment (DEA) reactions. Single TNT molecules decompose by attachment of an electron at virtually no extra energy reflecting the explosive nature of the compound. The complete freezing of dissociation intermediates in TNT embedded in the droplet is explained by the particular mechanisms of DEA in nitrobenzenes, which is characterized by complex rearrangement processes in the transient negative ion (TNI) prior to decomposition. These mechanisms provide the condition for effective energy withdrawal from the TNI into the dissipative environment thereby completely suppressing its decomposition.

CdO-based nanostructures as novel CO2 gas sensors

NASA Astrophysics Data System (ADS)

Krishnakumar, T.; Jayaprakash, R.; Prakash, T.; Sathyaraj, D.; Donato, N.; Licoccia, S.; Latino, M.; Stassi, A.; Neri, G.

2011-08-01

Crystalline Cd(OH)2/CdCO3 nanowires, having lengths in the range from 0.3 up to several microns and 5-30 nm in diameter, were synthesized by a microwave-assisted wet chemical route and used as a precursor to obtain CdO nanostructures after a suitable thermal treatment in air. The morphology and microstructure of the as-synthesized and annealed materials have been investigated by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and thermogravimetry-differential scanning calorimetry. The change in morphology and electrical properties with temperature has revealed a wire-to-rod transformation along with a decreases of electrical resistance. Annealed samples were printed on a ceramic substrate with interdigitated contacts to fabricate resistive solid state sensors. Gas sensing properties were explored by monitoring CO2 in synthetic air in the concentration range 0.2-5 v/v% (2000-50 000 ppm). The effect of annealing temperature, working temperature and CO2 concentration on sensing properties (sensitivity, response/recovery time and stability) were investigated. The results obtained demonstrate that CdO-based thick films have good potential as novel CO2 sensors for practical applications.

Electron spin resonance studies of Bi1-xScxFeO3 nanoparticulates: Observation of an enhanced spin canting over a large temperature range

NASA Astrophysics Data System (ADS)

Titus, S.; Balakumar, S.; Sakar, M.; Das, J.; Srinivasu, V. V.

2017-12-01

Bi1-xScxFeO3 (x = 0.0, 0.1, 0.15, 0.25) nano particles were synthesized by sol gel method. We then probed the spin system in these nano particles using electron spin resonance technique. Our ESR results strongly suggest the scenario of modified spin canted structures. Spin canting parameter Δg/g as a function of temperature for Scandium doped BFO is qualitatively different from undoped BFO. A broad peak is observed for all the Scandium doped BFO samples and an enhanced spin canting over a large temperature range (75-210 K) in the case of x = 0.15 doping. We also showed that the asymmetry parameter and thereby the magneto-crystalline anisotropy in these BSFO nanoparticles show peaks around 230 K for (x = 0.10 and 0.15) and beyond 300 K for x = 0.25 system. Thus, we established that the Sc doping significantly modifies the spin canting and magneto crystalline anisotropy in the BFO system.

Thermodynamic analysis and purifying an amorphous phase of frozen crystallization centers

NASA Astrophysics Data System (ADS)

Lysov, V. I.; Tsaregradskaya, T. L.; Turkov, O. V.; Saenko, G. V.

2017-12-01

The possibility of dissolving frozen crystallization centers in amorphous alloys of the Fe-B system is considered by means of thermodynamic calculations. This can in turn improve the thermal stability of an amorphous alloy. The effect isothermal annealing has on the thermal stability of multicomponent amorphous alloys based on iron is investigated via the highly sensitive dilatometric technique, measurements of microsolidity, and electron microscopic investigations. The annealing temperature is determined empirically on the basis of the theses of the thermodynamic theory of the high temperature stability of multicomponent amorphous alloys, according to which there exists a range of temperatures that is characterized by a negative difference between the chemical potentials of phases in a heterogeneous amorphous matrix-frozen crystallization centers system. The thermodynamic condition of the possible dissolution of frozen crystallization centers is thus met. It is shown that introducing regimes of thermal processing allows us to expand the ranges of the thermal stability of iron-based amorphous alloys by 20-40 K through purifying an amorphous matrix of frozen crystallization centers. This conclusion is proved via electron microscopic investigations.

A theory of local and global processes which affect solar wind electrons. 2: Experimental support

NASA Technical Reports Server (NTRS)

Scudder, J. D.; Olbert, S.

1979-01-01

The microscopic characteristics of the Coulomb cross section show that there are three natural subpopulations for plasma electrons: the subthermals with local kinetic energy E kT sub c; the transthermals with kT sub c E 7 kT sub c and the extrathermals E 7 kT sub c. Data from three experimental groups on three different spacecraft in the interplanetary medium over a radial range are presented to support the five interrelations projected between solar wind electron properties and changes in the interplanetary medium: (1) subthermals respond primarily to local changes (compression and rarefactions) in stream dynamics; (2) the extrathermal fraction of the ambient electron density should be anti-correlated with the asymptotic bulk speed; (3) the extrathermal "temperature" should be anti-correlated with the local wind speed at 1 AU; (4) the heat flux carried by electrons should be anti-correlated with the local bulk speed; and (5) the extrathermal differential 'temperature' should be nearly independent of radius within 1 AU.

Scaling relationships for nonadiabatic energy relaxation times in warm dense matter: toward understanding the equation of state.

PubMed

Pradhan, Ekadashi; Magyar, Rudolph J; Akimov, Alexey V

2016-11-30

Understanding the dynamics of electron-ion energy transfer in warm dense (WD) matter is important to the measurement of equation of state (EOS) properties and for understanding the energy balance in dynamic simulations. In this work, we present a comprehensive investigation of nonadiabatic electron relaxation and thermal excitation dynamics in aluminum under high pressure and temperature. Using quantum-classical trajectory surface hopping approaches, we examine the role of nonadiabatic couplings and electronic decoherence in electron-nuclear energy transfer in WD aluminum. The computed timescales range from 400 fs to 4.0 ps and are consistent with existing experimental studies. We have derived general scaling relationships between macroscopic parameters of WD systems such as temperature or mass density and the timescales of energy redistribution between quantum and classical degrees of freedom. The scaling laws are supported by computational results. We show that electronic decoherence plays essential role and can change the functional dependencies qualitatively. The established scaling relationships can be of use in modelling of WD matter.

Fluctuations in the electron system of a superconductor exposed to a photon flux

PubMed Central

de Visser, P. J.; Baselmans, J. J. A.; Bueno, J.; Llombart, N.; Klapwijk, T. M.

2014-01-01

In a superconductor, in which electrons are paired, the density of unpaired electrons should become zero when approaching zero temperature. Therefore, radiation detectors based on breaking of pairs promise supreme sensitivity, which we demonstrate using an aluminium superconducting microwave resonator. Here we show that the resonator also enables the study of the response of the electron system of the superconductor to pair-breaking photons, microwave photons and varying temperatures. A large range in radiation power (at 1.54 THz) can be chosen by carefully filtering the radiation from a blackbody source. We identify two regimes. At high radiation power, fluctuations in the electron system caused by the random arrival rate of the photons are resolved, giving a straightforward measure of the optical efficiency (48±8%) and showing an unprecedented detector sensitivity. At low radiation power, fluctuations are dominated by excess quasiparticles, the number of which is measured through their recombination lifetime. PMID:24496036

Transport coefficients in high-temperature ionized air flows with electronic excitation

NASA Astrophysics Data System (ADS)

Istomin, V. A.; Oblapenko, G. P.

2018-01-01

Transport coefficients are studied in high-temperature ionized air mixtures using the modified Chapman-Enskog method. The 11-component mixture N2/N2+/N /N+/O2/O2+/O /O+/N O /N O+/e- , taking into account the rotational and vibrational degrees of freedom of molecules and electronic degrees of freedom of both atomic and molecular species, is considered. Using the PAINeT software package, developed by the authors of the paper, in wide temperature range calculations of the thermal conductivity, thermal diffusion, diffusion, and shear viscosity coefficients for an equilibrium ionized air mixture and non-equilibrium flow conditions for mixture compositions, characteristic of those in shock tube experiments and re-entry conditions, are performed. For the equilibrium air case, the computed transport coefficients are compared to those obtained using simplified kinetic theory algorithms. It is shown that neglecting electronic excitation leads to a significant underestimation of the thermal conductivity coefficient at temperatures higher than 25 000 K. For non-equilibrium test cases, it is shown that the thermal diffusion coefficients of neutral species and the self-diffusion coefficients of all species are strongly affected by the mixture composition, while the thermal conductivity coefficient is most strongly influenced by the degree of ionization of the flow. Neglecting electronic excitation causes noticeable underestimation of the thermal conductivity coefficient at temperatures higher than 20 000 K.

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Akasaka, S.; Yuji, H.; Tamura, K.; Nakahara, K.; Tanabe, T.; Kamisawa, A.; Gokmen, T.; Shabani, J.; Shayegan, M.

2008-12-01

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures ( x=0.05 , 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6×1011-1.6×1012cm-2 , corresponding to a range of 3.1≤rs≤5.2 , where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.

Flexible high-temperature dielectric materials from polymer nanocomposites.

PubMed

Li, Qi; Chen, Lei; Gadinski, Matthew R; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Iagodkine, Elissei; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-30

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

NASA Technical Reports Server (NTRS)

Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

1998-01-01

The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

Flexible high-temperature dielectric materials from polymer nanocomposites

NASA Astrophysics Data System (ADS)

Li, Qi; Chen, Lei; Gadinski, Matthew R.; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-01

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Investigation of a possible electronic phase separation in the magnetic semiconductors Ga1 -xMnxAs and Ga1 -xMnxP by means of fluctuation spectroscopy

NASA Astrophysics Data System (ADS)

Lonsky, Martin; Teschabai-Oglu, Jan; Pierz, Klaus; Sievers, Sibylle; Schumacher, Hans Werner; Yuan, Ye; Böttger, Roman; Zhou, Shengqiang; Müller, Jens

2018-02-01

We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic Ga1 -xMnxAs epitaxial thin films covering a large parameter space in terms of the Mn content x and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic compounds with x >2 % do not exhibit any significant change in the low-frequency resistance noise around the Curie temperature TC, we find indications for an electronic phase separation in films with x <2 % in the vicinity of TC, manifesting itself in a maximum in the noise power spectral density. These results are compared with noise measurements on an insulating Ga1 -xMnxP reference sample, for which the evidence for an electronic phase separation is even stronger and a possible percolation of bound magnetic polarons is discussed. Another aspect addressed in this work is the effect of ion-irradiation-induced disorder on the electronic properties of Ga1 -xMnxAs films and, in particular, whether any electronic inhomogeneities can be observed in this case. Finally, we put our findings into the context of the ongoing debate on the electronic structure and the development of spontaneous magnetization in these materials.

Electron critical gradient scale length measurements of ICRF heated L-mode plasmas at Alcator C-Mod tokamak

NASA Astrophysics Data System (ADS)

Houshmandyar, S.; Hatch, D. R.; Horton, C. W.; Liao, K. T.; Phillips, P. E.; Rowan, W. L.; Zhao, B.; Cao, N. M.; Ernst, D. R.; Greenwald, M.; Howard, N. T.; Hubbard, A. E.; Hughes, J. W.; Rice, J. E.

2018-04-01

A profile for the critical gradient scale length (Lc) has been measured in L-mode discharges at the Alcator C-Mod tokamak, where electrons were heated by an ion cyclotron range of frequency through minority heating with the intention of simultaneously varying the heat flux and changing the local gradient. The electron temperature gradient scale length (LTe-1 = |∇Te|/Te) profile was measured via the BT-jog technique [Houshmandyar et al., Rev. Sci. Instrum. 87, 11E101 (2016)] and it was compared with electron heat flux from power balance (TRANSP) analysis. The Te profiles were found to be very stiff and already above the critical values, however, the stiffness was found to be reduced near the q = 3/2 surface. The measured Lc profile is in agreement with electron temperature gradient (ETG) models which predict the dependence of Lc-1 on local Zeff, Te/Ti, and the ratio of the magnetic shear to the safety factor. The results from linear Gene gyrokinetic simulations suggest ETG to be the dominant mode of turbulence in the electron scale (k⊥ρs > 1), and ion temperature gradient/trapped electron mode modes in the ion scale (k⊥ρs < 1). The measured Lc profile is in agreement with the profile of ETG critical gradients deduced from Gene simulations.

Warming of infusion syringes caused by electronic syringe pumps.

PubMed

Cornelius, A; Frey, B; Neff, T A; Gerber, A C; Weiss, M

2003-05-01

To evaluate inadvertent warming of the infusion syringe in four different types of electronic syringe pumps. Ambient temperature and syringe surface temperature were simultaneously measured by two electronic temperature probes in four different models of commercially available syringe pumps. Experiments were performed at an infusion rate of 1 ml h(-1) using both battery-operated and main power-operated pumps. Measurements were repeated four times with two pumps from each of the four syringe pump types at a room temperature of approximately 23 degrees C. Differences among the four syringe pump brands regarding ambient to syringe temperature gradient were compared using ANOVA. A P-value of less than 0.05 was considered statistically significant. Syringe warming differed significantly between the four syringe brands for both the battery-operated and main power-operated mode (ANOVA, P< 0.001 for both modes). Individual differences between syringe surface and ambient temperature ranged from 0.3 to 1.9 degrees C for battery operation and from 0.5 to 11.2 degrees C during main-power operation. Infusion solutions can be significantly warmed by syringe pumps. This has potential impact on bacterial growth and the stability of drug solutions and blood products infused, as well as on the susceptibility to hydrostatic pressure changes within the infusion syringe.

Ab initio calculation of the shear viscosity of neon in the liquid and hypercritical state over a wide pressure and temperature range

NASA Astrophysics Data System (ADS)

Eggenberger, Rolf; Gerber, Stefan; Huber, Hanspeter; Searles, Debra; Welker, Marc

1992-08-01

The shear viscosity is calculated ab initio for the liquid and hypercritical state, i.e. a previously published potential for Ne 2, obtained from ab initio calculations including electron correlation, is used in classical equilibrium molecular dynamics simulations to obtain the shear viscosity from a Green-Kubo integral. The quality of the results is quite uniform over a large pressure range up to 1000 MPa and a wide temperature range from 26 to 600 K. In most cases the calculated shear viscosity deviates by less than 10% from the experimental value, in general the error being only a few percent.

A Tractable Estimate for the Dissipation Range Onset Wavenumber Throughout the Heliosphere

NASA Astrophysics Data System (ADS)

Engelbrecht, N. Eugene; Strauss, R. Du Toit

2018-04-01

The modulation of low-energy electrons in the heliosphere is extremely sensitive to the behavior of the dissipation range slab turbulence. The present study derives approximate expressions for the wavenumber at which the dissipation range on the slab turbulence power spectrum commences, by assuming that this onset occurs when dispersive waves propagating parallel to the background magnetic field gyroresonate with thermal plasma particles. This assumption yields results in reasonable agreement with existing spacecraft observations. These expressions are functions of the solar wind proton and electron temperatures, which are here modeled throughout the region where the solar wind is supersonic using a two-component turbulence transport model. The results so acquired are compared with extrapolations of existing models for the dissipation range onset wavenumber, and conclusions are drawn therefrom.

Cross-section and rate formulas for electron-impact ionization, excitation, deexcitation, and total depopulation of excited atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vriens, L.; Smeets, A.H.M.

1980-09-01

For electron-induced ionization, excitation, and de-excitation, mainly from excited atomic states, a detailed analysis is presented of the dependence of the cross sections and rate coefficients on electron energy and temperature, and on atomic parameters. A wide energy range is covered, including sudden as well as adiabatic collisions. By combining the available experimental and theoretical information, a set of simple analytical formulas is constructed for the cross sections and rate coefficients of the processes mentioned, for the total depopulation, and for three-body recombination. The formulas account for large deviations from classical and semiclassical scaling, as found for excitation. They agreemore » with experimental data and with the theories in their respective ranges of validity, but have a wider range of validity than the separate theories. The simple analytical form further facilitates the application in plasma modeling.« less

Exploration on anion ordering, optical properties and electronic structure in K3WO3F3 elpasolite

NASA Astrophysics Data System (ADS)

Atuchin, V. V.; Isaenko, L. I.; Kesler, V. G.; Lin, Z. S.; Molokeev, M. S.; Yelisseyev, A. P.; Zhurkov, S. A.

2012-03-01

Room-temperature modification of potassium oxyfluorotungstate, G2-K3WO3F3, has been prepared by low-temperature chemical route and single crystal growth. Wide optical transparency range of 0.3-9.4 μm and forbidden band gap Eg=4.32 eV have been obtained for G2-K3WO3F3 crystal. Meanwhile, its electronic structure has been calculated with the first-principles calculations. The good agreement between the theorectical and experimental results have been achieved. Furthermore, G2-K3WO3F3 is predicted to possess the relatively large nonlinear optical coefficients.

Anisotropic electron temperature measurements without knowing the spectral transmissivity for a JT-60SA Thomson scattering diagnostic.

PubMed

Tojo, H; Hatae, T; Yatsuka, E; Itami, K

2012-10-01

This paper focuses on a method for measuring the electron temperature (T(e)) without knowing the transmissivity using Thomson scattering diagnostic with a double-pass scattering system. Application of this method for measuring the anisotropic T(e), i.e., the T(e) in the directions parallel (T(eparallel)) and perpendicular (T(eperpendicular)) to the magnetic field, is proposed. Simulations based on the designed parameters for a JT-60SA indicate the feasibility of the measurements except in certain T(e) ranges, e.g., T(eparallel) ~ 3.5T(eperpendicular) at 120° of the scattering angle.

VizieR Online Data Catalog: Parameterization of level-resolved RR data fro SPEX (Mao+, 2016)

NASA Astrophysics Data System (ADS)

Mao, J.; Kaastra, J.

2016-02-01

The fitting parameters for the level-resolved radiative recombination rate coefficients for H-like to Na-like ions from H (z=1) up to and including (z=30), in a wide temperature range. The electron temperature should be in units of eV. We refer to the recombined ion when we speak of the radiative recombination of a certain ion, e.g. for a bare oxygen ion capturing a free electron via radiative recombination to form H-like oxygen (O VIII, s=1, z=8). The fitting accuracies are better than 5% for ~99% of the levels considered here. (1 data file).

Temperature dependence of the cross section for the fragmentation of thymine via dissociative electron attachment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kopyra, Janina; Abdoul-Carime, Hassan, E-mail: hcarime@ipnl.in2p3.fr

Providing experimental values for absolute Dissociative Electron Attachment (DEA) cross sections for nucleobases at realistic biological conditions is a considerable challenge. In this work, we provide the temperature dependence of the cross section, σ, of the dehydrogenated thymine anion (T − H){sup −} produced via DEA. Within the 393-443 K temperature range, it is observed that σ varies by one order of magnitude. By extrapolating to a temperature of 313 K, the relative DEA cross section for the production of the dehydrogenated thymine anion at an incident energy of 1 eV decreases by 2 orders of magnitude and the absolutemore » value reaches approximately 6 × 10{sup −19} cm{sup 2}. These quantitative measurements provide a benchmark for theoretical prediction and also a contribution to a more accurate description of the effects of ionizing radiation on molecular medium.« less

Electron spin resonance study of CuGa1-xMnxSe2 magnetic semiconducting compounds

NASA Astrophysics Data System (ADS)

Fermin, José R.; Nava, Alexander; Durante-Rincón, C. A.; Castro, Jaime; Silva, Pedro J.

2013-02-01

We report on the magnetic properties of the diluted magnetic semiconductor CuGa1-xMnxSe2. For this, Electron spin resonance (ESR) experiments in the temperature range 70 K

Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2015-12-01

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pribram-Jones, A.; Burke, K.

We show that the adiabatic connection formula of ground-state density functional theory relates the correlation energy to a coupling-constant integral over a purely potential contribution, and is widely used to understand and improve approximations. The corresponding formula for thermal density functional theory is cast as an integral over temperatures instead, ranging upward from the system's physical temperature. We also show how to relate different correlation components to each other, either in terms of temperature or coupling-constant integrations. Lastly, we illustrate our results on the uniform electron gas.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S. L., E-mail: shuch@ist.hokudai.ac.jp; Takayama, J.; Murayama, A.

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In{sub 0.1}Ga{sub 0.9}As quantum well (QW) and In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interactionmore » with random nuclear field.« less

Tests for coronal electron temperature signatures in suprathermal electron populations at 1 AU

NASA Astrophysics Data System (ADS)

Macneil, Allan R.; Owen, Christopher J.; Wicks, Robert T.

2017-12-01

The development of knowledge of how the coronal origin of the solar wind affects its in situ properties is one of the keys to understanding the relationship between the Sun and the heliosphere. In this paper, we analyse ACE/SWICS and WIND/3DP data spanning > 12 years, and test properties of solar wind suprathermal electron distributions for the presence of signatures of the coronal temperature at their origin which may remain at 1 AU. In particular we re-examine a previous suggestion that these properties correlate with the oxygen charge state ratio O7+ / O6+, an established proxy for coronal electron temperature. We find only a very weak but variable correlation between measures of suprathermal electron energy content and O7+ / O6+. The weak nature of the correlation leads us to conclude, in contrast to earlier results, that an initial relationship with core electron temperature has the possibility to exist in the corona, but that in most cases no strong signatures remain in the suprathermal electron distributions at 1 AU. It cannot yet be confirmed whether this is due to the effects of coronal conditions on the establishment of this relationship or due to the altering of the electron distributions by processing during transport in the solar wind en route to 1 AU. Contrasting results for the halo and strahl population favours the latter interpretation. Confirmation of this will be possible using Solar Orbiter data (cruise and nominal mission phase) to test whether the weakness of the relationship persists over a range of heliocentric distances. If the correlation is found to strengthen when closer to the Sun, then this would indicate an initial relationship which is being degraded, perhaps by wave-particle interactions, en route to the observer.

Dispersive electron transport in tris(8-hydroxyquinoline) aluminum (Alq3) probed by impedance spectroscopy.

PubMed

Berleb, Stefan; Brütting, Wolfgang

2002-12-31

Electron transport in tris(8-hydroxyquinoline) aluminum (Alq3) is investigated by impedance spectroscopy under conditions of space-charge limited conduction (SCLC). Existing SCLC models are extended to include the field dependence of the charge carrier mobility and energetically distributed trap states. The dispersive nature of electron transport is revealed by a frequency-dependent mobility with a dispersion parameter alpha in the range 0.4-0.5, independent of temperature. This indicates that positional rather than energetic disorder is the dominant mechanism for the dispersive transport of electrons in Alq3.

Electrostatic emissions between electron gyroharmonics in the outer magnetosphere

NASA Technical Reports Server (NTRS)

Hubbard, R. F.; Birmingham, T. J.

1977-01-01

A scheme was constructed and a theoretical model was developed to classify electrostatic emissions. All of the emissions appear to be generated by the same basic mechanism: an unstable electron plasma distribution consisting of cold electrons (less than 100 eV) and hot loss cone electrons (about 1 keV). Each emission class is associated with a particular range of model parameters; the wide band electric field data can thus be used to infer the density and temperature of the cold plasma component. The model predicts that gyroharmonic emissions near the plasma frequency require large cold plasma densities.

Thermospheric temperature measurement technique.

NASA Technical Reports Server (NTRS)

Hueser, J. E.; Fowler, P.

1972-01-01

A method for measurement of temperature in the earth's lower thermosphere from a high-velocity probes is described. An undisturbed atmospheric sample is admitted to the instrument by means of a free molecular flow inlet system of skimmers which avoids surface collisions of the molecules prior to detection. Measurement of the time-of-flight distribution of an initially well-localized group of nitrogen metastable molecular states produced in an open, crossed electron-molecular beam source, yields information on the atmospheric temperature. It is shown that for high vehicle velocities, the time-of-flight distribution of the metastable flux is a sensitive indicator of atmospheric temperature. The temperature measurement precision should be greater than 94% at the 99% confidence level over the range of altitudes from 120-170 km. These precision and altitude range estimates are based on the statistical consideration of the counting rates achieved with a multichannel analyzer using realistic values for system parameters.

Tungsten Oxide Photonic Crystals as Optical Transducer for Gas Sensing.

PubMed

Amrehn, Sabrina; Wu, Xia; Wagner, Thorsten

2018-01-26

Some metal oxide semiconductors, such as tungsten trioxide or tin dioxide, are well-known as resistive transducers for gas sensing and offer high sensitivities down to the part per billion level. Electrical signal read-out, however, limits the information obtained on the electronic properties of metal oxides to a certain frequency range and its application because of the required electrical contacts. Therefore, a novel approach for building an optical transducer for gas reactions utilizing metal oxide photonic crystals is presented here. By the rational design of the structure and composition it is possible to synthesize a functional material which allows one to obtain insight into its electronic properties in the optical frequency range with simple experimental measures. The concept is demonstrated by tungsten trioxide inverse opal structure as optical transducer material for hydrogen sensing. The sensing behavior is analyzed in a temperature range from room temperature to 500 °C and in a wide hydrogen concentration range (3000 ppm to 10%). The sensing mechanism is mainly the refractive index change resulting from hydrogen intercalation in tungsten trioxide, but the back reaction has also impact on the optical properties of this system. Detailed chemical reaction studies provide suggestions for specific sensing conditions.

Sensor Amplifier for the Venus Ground Ambient

NASA Technical Reports Server (NTRS)

DelCastillo, Linda Y.; Johnson, Travis W.; Hatake, Toshiro; Mojarradi, Mohammad M.; Kolawa, Elizabeth A.

2006-01-01

Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.

Synthesis by sol-gel process, structural and optical properties of nanoparticles of zinc oxide doped vanadium

NASA Astrophysics Data System (ADS)

El Ghoul, J.; Barthou, C.; El Mir, L.

2012-06-01

We report the elaboration of vanadium-doped ZnO nanoparticles prepared by a sol-gel processing technique. In our approach, the water for hydrolysis was slowly released by esterification reaction followed by a supercritical drying in ethyl alcohol. Vanadium doping concentration of 10 at.% has been investigated. After treatment in air at different temperatures, the obtained nanopowder was characterised by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). Analysis by scanning electron microscopy at high resolution shows that the grain size increases with increasing temperature. Thus, in the case of thermal treatment at 500 °C in air, the powder with an average particle size of 25 nm shows a strong luminescence band in the visible range. The intensity and energy position of the obtained PL band depends on the temperature measurement increase. The mechanism of this emission band is discussed.

Hydrogen-induced morphotropic phase transformation of single-crystalline vanadium dioxide nanobeams.

PubMed

Hong, Woong-Ki; Park, Jong Bae; Yoon, Jongwon; Kim, Bong-Joong; Sohn, Jung Inn; Lee, Young Boo; Bae, Tae-Sung; Chang, Sung-Jin; Huh, Yun Suk; Son, Byoungchul; Stach, Eric A; Lee, Takhee; Welland, Mark E

2013-04-10

We report a morphotropic phase transformation in vanadium dioxide (VO2) nanobeams annealed in a high-pressure hydrogen gas, which leads to the stabilization of metallic phases. Structural analyses show that the annealed VO2 nanobeams are hexagonal-close-packed structures with roughened surfaces at room temperature, unlike as-grown VO2 nanobeams with the monoclinic structure and with clean surfaces. Quantitative chemical examination reveals that the hydrogen significantly reduces oxygen in the nanobeams with characteristic nonlinear reduction kinetics which depend on the annealing time. Surprisingly, the work function and the electrical resistance of the reduced nanobeams follow a similar trend to the compositional variation due mainly to the oxygen-deficiency-related defects formed at the roughened surfaces. The electronic transport characteristics indicate that the reduced nanobeams are metallic over a large range of temperatures (room temperature to 383 K). Our results demonstrate the interplay between oxygen deficiency and structural/electronic phase transitions, with implications for engineering electronic properties in vanadium oxide systems.

Laboratory Measurements of the Dielectronic Recombination Satellite Transitions of He-Like FE XXV and H-Like FE XXVI

NASA Technical Reports Server (NTRS)

Gu, M. F.; Beiersdorfer, P.; Brown, G. V.; Graf, A.; Kelley, R. I.; Kilbourne, C. A.; Porter, F. S.; Kahn, S. M,

2012-01-01

We present laboratory spectra of dielectronic recombination (DR) satellite transitions attached to the He-like and H-like iron resonance lines obtained with the NASA Goddard Space Flight Center X-ray calorimeter and produced by a thermal plasma simu1ation technique on the EBIT-I electron beam ion trap at the Lawrence Livermore National Laboratory. We demonstrate that the calorimeter has sufficient spectral resolution in the 6-9 keV range to provide reliable measurements not only of standard DR satellite to resonance line intensities but also of DR satellite to DR satellite ratios that can be used to diagnose nonthermal electron distributions. Electron temperatures derived from the measured line intensities are consistent with the temperature of the simulated plasma. Temperature measurements based on DR satellite transitions have significant advantages over those based on collisional ionization equilibrium or continuum shape. Thus, successful demonstration of this method with the X-ray calorimeter is an important step fur its application in X-ray astronomy.

Nanostructure ZnFe2O4 with Bacillus subtilis for Detection of LPG at Low Temperature

NASA Astrophysics Data System (ADS)

Goutham, Solleti; Kumar, Devarai Santhosh; Sadasivuni, Kishor Kumar; Cabibihan, John-John; Rao, Kalagadda Venkateswara

2017-04-01

The present study deals with the development of a chemical sensor for the detection of liquefied petroleum gas (LPG) at a low operating temperature using Zinc ferrite (ZnFe2O4)/ Bacillus subtilis ( B. subtilis) hybrid nanostructures. The nanostructure ZnFe2O4 and B. subtilis powder, taken in equal proportion was made into films using the spin coating technique. X-ray diffraction, thermal analysis, scanning electron microscopy, and transmission electron microscopy were used to study morphology, structure and crystallite size. The sensing properties of the hybrid structure were studied and excellent response was observed in the temperature range of 50-55°C for 400 ppm LPG, when compared to the individual components of the hybrid. The signal output of the proposed sensor were extremely stable for more than 30 days. This method proposes the usage of the biomolecule/metal oxide composites in electronics and helps to reduce the metal oxide usage.

Characterization of spatially resolved high resolution x-ray spectrometers for HEDP and light-source experiments

NASA Astrophysics Data System (ADS)

Hill, K. W.; Bitter, M.; Delgado-Aparicio, L.; Efthimion, P.; Pablant, N.; Lu, J.; Beiersdorfer, P.; Chen, H.; Magee, E.

2014-10-01

A high resolution 1D imaging x-ray spectrometer concept comprising a spherically bent crystal and a 2D pixelated detector is being optimized for diagnostics of small sources such as high energy density physics (HEDP) and synchrotron radiation or x-ray free electron laser experiments. This instrument is used on tokamak experiments for measurement of spatial profiles of Doppler ion temperature and plasma flow velocity, as well as electron temperature. Laboratory measurements demonstrate a resolving power, E/ ΔE of 10,000 and spatial resolution better than 10 μm. Good performance is obtained for Bragg angles ranging from 23 to 63 degrees. Initial tests of the instrument on HEDP plasmas are being performed with a goal of developing spatially resolved ion and electron temperature diagnostics. This work was performed under the auspices of the US DOE by PPPL under Contract DE-AC02-09CH11466 and by LLNL under Contract DE-AC52-07NA27344.

Study of structural, electronic and magneto transport properties of La0.7Ca0.2-xSrxAg0.1MnO3

NASA Astrophysics Data System (ADS)

Subhashini, P.; Munirathinum, B.; Krishnaiah, M.; Venkatesh, R.; Venkateswarlu, D.; Ganesan, V.

2016-10-01

Structural, electrical and magneto transport properties of Lanthanum based manganites La0.7Ca0.2-xSrxAg0.1MnO3 (x=0 & 0.1) synthesized by low temperature nitrate route is studied systematically. The X-ray Diffraction patterns confirm the presence of orthorhombic structure with Pnma space group. The temperature dependence of MR (-35%) from 233-272K for x=0 and an MR (-26%) from 281-309K for x=0.1composition with an overall variation of 1% is very much advantageous for device application. Interestingly, in low temperature regime, the MR value of -47% obtained in x=0.1 composition at 10T around 5K is 20% higher than the MR obtained at 10T around the metal insulator transition. Significant changes happening in the low temperature MR measurements is discussed in the light of electron-electron interactions and weak localization mechanisms while the additional broad hump responsible for flat MR is attributed to the intrinsic electronic in homogeneity driven phase competition created due to the presence of mono valent Ag ions. The complex localization mechanism associated with insulating regime is in accordance with Variable range hopping of small polarons.

Comparison of tympanic and rectal temperature in febrile patients.

PubMed

Sehgal, Arvind; Dubey, N K; Jyothi, M C; Jain, Shilpa

2002-04-01

To compare tympanic membrane temperature and rectal temperature in febrile pediatric patients. Sixty febrile children were enrolled as continuous enrollment at initial triage. Two readings of ear temperature were taken in each child with Thermoscan infrared thermometer. Rectal temperature was recorded by a digital electronic thermometer. Comparison of both the techniques was done and co-relation co-efficients calculated. Parental preference for both techniques was assessed. It was observed that mean ear temperature was 38.9+/-0.90 C and that for rectal temperature was 38.8+/-0.80 degrees C. The correlation coefficient between the two was 0.994 (p < 0.01). Coefficients for both sites were comparable over a wide age range. The difference between readings taken from two ears was not significant. Temperature ranges over which readings were recorded were quite wide for both techniques. Parental preference for tympanic thermometry over rectal thermometry was noticed. Tympanic thermometry utilizes pyro-electric sensors, to detect infra-red rays emitted from the surface of tympanic membrane. Ear temperatures correlates well with rectal temperatures which have long been considered as "core" temperatures. Parents prefer the technique of ear thermometry which is quick (2 sec), safe and non-invasive and patient resistance for this is also less. A non-invasive, non-mucous device which is accurate over a wide range of temperature could be very useful.

Compositionally Graded Multilayer Ceramic Capacitors.

PubMed

Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters and power converters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Hyun-Cheol; Zhou, Jie E.; Maurya, Deepam

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. In this paper, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters andmore » power converters.« less

Long range ordered alloys modified by group IV-B metals

DOEpatents

Liu, Chain T.; Inouye, Henry; Schaffhauser, Anthony C.

1983-01-01

Ductile long range ordered alloys having high critical ordering temperatures exist in the (V,M)(Fe,Ni,Co).sub.3 system having the composition comprising by weight 20.6%-22.6% V, 14-50% Fe, 0-64% Co, and 0-40% Ni, and 0.4-1.4% M, where M is a metal selected from the group consisting of Ti, Zr, Hf, and their mixtures. These modified alloys have an electron density no greater than 8.00 and exhibit marked increases at elevated temperature in ductility and other mechanical properties over previously known ordered alloys.

Characterization of local thermodynamic equilibrium in a laser-induced aluminum alloy plasma.

PubMed

Zhang, Yong; Zhao, Zhenyang; Xu, Tao; Niu, GuangHui; Liu, Ying; Duan, Yixiang

2016-04-01

The electron temperature was evaluated using the line-to-continuum ratio method, and whether the plasma was close to the local thermodynamic equilibrium (LTE) state was investigated in detail. The results showed that approximately 5 μs after the plasma formed, the changes in the electron and excitation temperatures, which were determined using a Boltzmann plot, overlapped in the 15% error range, which indicated that the LTE state was reached. The recombination of electrons and ions and the free electron expansion process led to the deviation from the LTE state. The plasma's expansion rate slowed over time, and when the expansion time was close to the ionization equilibrium time, the LTE state was almost reached. The McWhirter criterion was adopted to calculate the threshold electron density for different species, and the results showed that experimental electron density was greater than the threshold electron density, which meant that the LTE state may have existed. However, for the nonmetal element N, the threshold electron density was greater than the value experimental value approximately 0.8 μs after the plasma formed, which meant that LTE state did not exist for N.

State-specific transport properties of electronically excited Ar and C

NASA Astrophysics Data System (ADS)

Istomin, V. A.; Kustova, E. V.

2018-05-01

In the present study, a theoretical model of state-resolved transport properties in electronically excited atomic species developed earlier is applied to argon and carbon atomic species. It is shown that for Ar and C, similarly to the case of atomic nitrogen and oxygen, the Slater-like models can be applied to calculate diameters of electronically excited atoms. Using the Slater-like model it is shown that for half-filled N (2 px1py1pz1) and full-filled Ar (3 px2py2pz2) electronic shells the growth of atomic radius goes slowly compared to C (2 px1py1) and O (2 px2py1pz1). The effect of collision diameters on the transport properties of Ar and C is evaluated. The influence of accounted number of electronic levels on the transport coefficients is examined for the case of Boltzmann distributions over electronic energy levels. It is emphasized that in the temperature range 1000-14000 K, for Boltzmann-like distributions over electronic states the number of accounted electronic levels do not influence the transport coefficients. Contrary to this, for higher temperatures T > 14000 K this effect becomes of importance, especially for argon.

High-Temperature Thermoelectric Properties of Perovskite-Type Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1)

NASA Astrophysics Data System (ADS)

Nakatsugawa, H.; Saito, M.; Okamoto, Y.

2017-05-01

Polycrystalline samples of Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1) have been synthesized using a conventional solid-state reaction method, and the crystal structure studied at room temperature. The magnetic susceptibility was measured from 5 K to 350 K. The electrical resistivity, Seebeck coefficient, and thermal conductivity were investigated as functions of temperature below 850 K. For all samples, the perovskite structure at room temperature exhibited orthorhombic Pbnm phase. While the Pr0.9Sr0.1MnO3 ( x = 0) sample exhibited ferromagnetic-like ground state below T C = 145 K (Curie temperature), the ferromagnetic transition temperature T C decreased with increasing x. The Seebeck coefficient of the samples with 0 ≤ x ≤ 0.8 decreased with increasing temperature because of double-exchange interaction of Mn ions. In fact, the carrier type for x = 0 changed from hole-like to electron-like behavior above 800 K. On the other hand, the samples with x ≥ 0.9 showed large positive Seebeck coefficient over the entire temperature range, indicating that the low-spin state of Fe ions dominated the electronic structure for this x range. In particular, the sample with x = 1 exhibited p-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical resistivity, and low thermal conductivity. Thus, the sample with x = 1 showed power factor of 20 μW m-1 K-2 at 850 K leading to ZT of 0.024 at this temperature, indicating that hole-doped perovskite-type iron oxide is a good candidate high-temperature thermoelectric p-type oxide.

On the mechanism of X-ray production by dart leaders of lightning flashes

NASA Astrophysics Data System (ADS)

Cooray, Vernon; Dwyer, Joseph; Rakov, V.; Rahman, Mahbubur

2010-07-01

Radiation with energies up to about 250 keV associated with the dart leader phase of rocket-triggered lightning were reported by Dwyer et al. (2004). The mechanism of X-ray generation by dart leaders, however, is unknown at present. Recently, Cooray et al. (2009a) developed physical concepts and mathematical techniques necessary to calculate the electric field associated with the tip of dart leaders. We have utilized the results of these calculations together with the energy dependent frictional force on electrons, as presented by Moss et al. (2006), to evaluate the maximum energy an electron will receive in accelerating in the dart-leader-tip electric field. The main assumptions made in performing the calculations are: (a) the dart leader channel is straight and vertical; (b) the path of the electrons are straight inside the channel; and (c) the decay of the channel temperature is uniform along the length of the dart leader. In the calculation, we have taken into account the fact that the electric field is changing both in space and time and that the gas in the defunct return stroke channel is at atmospheric pressure and at elevated temperature (i.e. reduced gas density). The results of the calculation show that for a given dart leader current there is a critical defunct-return-stroke-channel temperature above which the cold electron runaway becomes feasible. For a typical dart leader, this temperature is around 2500 K. This critical temperature decreases with increase in dart leader current. Since the temperature of the defunct return stroke channel may lie in the range of 2000-4000 K, the results show that the electric field at the tip of dart leaders is capable of accelerating electrons to MeV energy levels.

Validation of gyrokinetic simulations with measurements of electron temperature fluctuations and density-temperature phase angles on ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Freethy, S. J.; Görler, T.; Creely, A. J.; Conway, G. D.; Denk, S. S.; Happel, T.; Koenen, C.; Hennequin, P.; White, A. E.; ASDEX Upgrade Team

2018-05-01

Measurements of turbulent electron temperature fluctuation amplitudes, δTe ⊥/Te , frequency spectra, and radial correlation lengths, Lr(Te ⊥) , have been performed at ASDEX Upgrade using a newly upgraded Correlation ECE diagnostic in the range of scales k⊥<1.4 cm-1, kr<3.5 cm-1 ( k⊥ρs<0.28 and krρs<0.7 ). The phase angle between turbulent temperature and density fluctuations, αnT, has also been measured by using an ECE radiometer coupled to a reflectometer along the same line of sight. These quantities are used simultaneously to constrain a set of ion-scale non-linear gyrokinetic turbulence simulations of the outer core (ρtor = 0.75) of a low density, electron heated L-mode plasma, performed using the gyrokinetic simulation code, GENE. The ion and electron temperature gradients were scanned within uncertainties. It is found that gyrokinetic simulations are able to match simultaneously the electron and ion heat flux at this radius within the experimental uncertainties. The simulations were performed based on a reference discharge for which δTe ⊥/Te measurements were available, and Lr(Te ⊥) and αnT were then predicted using synthetic diagnostics prior to measurements in a repeat discharge. While temperature fluctuation amplitudes are overestimated by >50% for all simulations within the sensitivity scans performed, good quantitative agreement is found for Lr(Te ⊥) and αnT. A validation metric is used to quantify the level of agreement of individual simulations with experimental measurements, and the best agreement is found close to the experimental gradient values.

Temperature dependence of partial conductivities of the BaZr0.7Ce0.2Y0.1O3-δ proton conductor

NASA Astrophysics Data System (ADS)

Heras-Juaristi, Gemma; Pérez-Coll, Domingo; Mather, Glenn C.

2017-10-01

Partial conductivities are presented for BaZr0.7Ce0.2Y0.1O3-δ, an important proton conductor for protonic-ceramic fuel cells and membrane reactors. Atmospheric dependencies of impedance performed in humidified and dry O2, air, N2 and H2(10%)/N2(90%) in the temperature range 300-900 °C, supported by the modified emf method, confirm significant electron-hole and protonic contributions to transport. For very reducing and wet atmospheres, the conductivity is predominantly ionic, with a higher participation of protons with decreasing temperature and increasing water-vapour partial pressure (pH2O). From moderately reducing conditions of wet N2 to wet O2, however, the conductivity is considerably influenced by electron holes as revealed by a significant dependence of total conductivity on oxygen partial pressure (pO2). With higher pH2O, proton transport increases, with a concomitant decrease of holes and oxygen vacancies. However, the effect of pH2O is also influenced by temperature, with a greater protonic contribution at both lower temperature and pO2. Values of proton transport number tH ≈ 0.63 and electronic transport number th ≈ 0.37 are obtained at 600 °C for pH2O = 0.022 atm and pO2 = 0.2 atm, whereas tH ≈ 0.95 and th ≈ 0.05 for pO2 = 10-5 atm. A hydration enthalpy of -109 kJ mol-1 is obtained in the range 600-900 °C.